Johannessen, B.; Kluth, P.; Glover, C.J.; Foran, G.J.; Ridgway, M.C.
Elemental Cu and Au nanocrystals (NCs) were produced by high-energy ion-implantations into amorphous silica (SiO 2 ) and subsequent thermal annealing. By a combination of X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM) we confirm both NC species to have the bulk face-centered cubic phase and estimate their average diameter. We concentrate on the investigation of the concentration and size-dependent coordination number (China) of these matrix embedded NCs utilising extended X-ray absorption fine structure (EXAFS) spectroscopy. The CN is found to be suppressed compared to that of a bulk standard. The CN in Au NCs is found to be lower than that of Cu NCs in agreement with smaller average Au NC sizes. We explain this difference by the difference in diffusivity for the two atomic species in SiO 2
Huang, Qiang; Liu, Meiying; Zhao, Jiao; Chen, Junyu; Zeng, Guangjian; Huang, Hongye; Tian, Jianwen; Wen, Yuanqing; Zhang, Xiaoyong; Wei, Yen
Polyethylenimine-tannins coated SiO2 (SiO2@PEI-TA) hybrid materials have been prepared via a single-step multifunctional coating with polyethylenimine (PEI) and tannins (TA), and characterized by transmission electron microscope (TEM), Fourier transform infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA), and X-ray photoelectron spectroscopy (XPS). The as-prepared SiO2@PEI-TA composites were examined as adsorbents to remove the Cu2+ from aqueous solution. The effects of contact time, initial Cu2+ concentration, solution pH and temperature, on Cu2+ adsorption have been investigated. The results show that the adsorption of Cu2+ onto SiO2@PEI-TA is dependent on the contact time, Cu2+ concentration, pH and temperature. The SiO2@PEI-TA composites show a 2.4-fold increase in adsorption capacity, implying that the introduction of PEI-TA coating is in favor of the Cu2+ adsorption. Based on the analysis of kinetic data, the kinetics of Cu2+ adsorption is more accurately described by the pseudo-second-order model. The equilibrium data are analyzed by Langmuir and Freundlich isotherms. Results of isotherms show that the better agreement is Freundlich isotherm model with correlation coefficient of 0.9914, which suggests that the adsorption of Cu2+ onto SiO2@PEI-TA is mainly a heterogeneous adsorption process. Thermodynamic analyses show that the adsorption interaction is actually a spontaneous and endothermic chemical process, which might involve the chemical chelation between Cu2+ and functional groups (amine and carboxyl groups) on the surface of SiO2@PEI-TA. In addition, the Cu2+ ions could desorb from SiO2@PEI-TA by using acid solution and the adsorption efficiency remains at high level after five adsorption-desorption recycles. These results provide potential applications of these novel adsorbents for the removal of heavy metal Cu2+ from aqueous solution and also provide strong evidence to support the adsorption mechanism proposed in the study.
Kawashima, T.; Yew, K. S.; Zhou, Y.; Ang, D. S.; Zhang, H. Z.; Kyuno, K.
We show that resistive switching in the SiO2/Cu stack can be modified by a brief exposure of the oxide to an Ar plasma. The set voltage of the SiO2/Cu stack is reduced by 33%, while the breakdown voltage of the SiO2/Si stack (control) is almost unchanged. Besides, the Ar plasma treatment suppresses the negative photoconductivity or optical resistance reset effect, where the electrically formed filamentary conductive path consisting of Cu-ion and oxygen-vacancy clusters is disrupted by the recombination of the oxygen vacancies with nearby light-excited oxygen ions. From the enhanced O-H peak in the Fourier-transform infrared spectrum of the plasma-treated oxide, it is proposed that the Ar plasma has created more oxygen vacancies in the surface region of the oxide. These vacancies in turn adsorb water molecules, which act as counter anions (OH-) promoting the migration of Cu cations into the oxide and forming a more complete Cu filament that is less responsive to light. The finding points to the prospect of a control over the optical resistance reset effect by a simple surface treatment step.
Pang, Zengyuan; Nie, Qingxin; Lv, Pengfei; Yu, Jian; Huang, Fenglin; Wei, Qufu
We report a room-temperature ammonia sensor with extra high response values and ideal flexibility, including polyaniline (PANI)-coated titanium dioxide-silicon dioxide (TiO2-SiO2) or copper oxide-titanium dioxide-silicon dioxide (CuO-TiO2-SiO2) composite nanofibers. Such flexible inorganic TiO2-SiO2 and CuO-TiO2-SiO2 composite nanofibers were prepared by electrospinning, followed by calcination. Then, in situ polymerization of aniline monomers was carried out with inorganic TiO2-SiO2 and CuO-TiO2-SiO2 composite nanofibers as templates. Gas sensing tests at room temperature indicated that the obtained CuO-TiO2-SiO2/PANI composite nanofibers had much higher response values to ammonia gas (ca. 45.67-100 ppm) than most of those reported before as well as the prepared TiO2-SiO2/PANI composite nanofibers here. These excellent sensing properties may be due to the P-N, P-P heterojunctions and a structure similar to field-effect transistors formed on the interfaces between PANI, TiO2, and CuO, which is p-type, n-type, and p-type semiconductor, respectively. In addition, the prepared free-standing CuO-TiO2-SiO2/PANI composite nanofiber membrane was easy to handle and possessed ideal flexibility, which is promising for potential applications in wearable sensors in the future.
Li Yan; Liu Yuling; Wang Aochen; Yang Zhixin; Sun Mingbin; Cheng Chuan; Zhang Yufeng; Zhang Nannan
There is a lot of hydroxyl on the surface of nano SiO 2 sol used as an abrasive in the chemical mechanical planarization (CMP) process, and the chemical reaction activity of the hydroxyl is very strong due to the nano effect. In addition to providing a mechanical polishing effect, SiO 2 sol is also directly involved in the chemical reaction. The stability of SiO 2 sol was characterized through particle size distribution, zeta potential, viscosity, surface charge and other parameters in order to ensure that the chemical reaction rate in the CMP process, and the surface state of the copper film after CMP was not affected by the SiO 2 sol. Polarization curves and corrosion potential of different concentrations of SiO 2 sol showed that trace SiO 2 sol can effectively weaken the passivation film thickness. In other words, SiO 2 sol accelerated the decomposition rate of passive film. It was confirmed that the SiO 2 sol as reactant had been involved in the CMP process of copper film as reactant by the effect of trace SiO 2 sol on the removal rate of copper film in the CMP process under different conditions. In the CMP process, a small amount of SiO 2 sol can drastically alter the chemical reaction rate of the copper film, therefore, the possibility that Cu/SiO 2 as a catalytic system catalytically accelerated the chemical reaction in the CMP process was proposed. According to the van't Hoff isotherm formula and the characteristics of a catalyst which only changes the chemical reaction rate with out changing the total reaction standard Gibbs free energy, factors affecting the Cu/SiO 2 catalytic reaction were derived from the decomposition rate of Cu (OH) 2 and the pH value of the system, and then it was concluded that the CuSiO 3 as intermediates of Cu/SiO 2 catalytic reaction accelerated the chemical reaction rate in the CMP process. It was confirmed that the Cu/SiO 2 catalytic system generated the intermediate of the catalytic reaction (CuSiO 3 ) in the CMP process
Angelici, Carlo|info:eu-repo/dai/nl/345731506; Meirer, Florian; van der Eerden, Ad M. J.|info:eu-repo/dai/nl/304840483; Schaink, Herrick L.; Goryachev, Andrey; Hofmann, Jan P.|info:eu-repo/dai/nl/355351110; Hensen, Emiel J. M.; Weckhuysen, Bert M.|info:eu-repo/dai/nl/285484397; Bruijnincx, Pieter C. A.|info:eu-repo/dai/nl/33799529X
Dehydrogenation promoters greatly enhance the performance of SiO2-MgO catalysts in the Lebedev process. Here, the effect of preparation method and order of addition of Cu on the structure and performance of Cu-promoted SiO2-MgO materials is detailed. Addition of Cu to MgO via incipient wetness
Wang, Fan; Zhang, Lijuan; Wang, Yeying; Liu, Xijian; Rohani, Sohrab; Lu, Jie
The graphene oxide (GO) functionalized by Fe3O4@SiO2@CS-TETA nanoparticles, Fe3O4@SiO2@CS-TETA-GO, was firstly fabricated in a mild way as a novel adsorbent for the removal of Cu(II) ions and methylene blue (MB) from aqueous solutions. The magnetic composites showed a good dispersity in water and can be conveniently collected for reuse through magnetic separation due to its excellent magnetism. When the Fe3O4@SiO2@CS- TETA-GO was used as an absorbent for the absorption of MB and Cu(II), the adsorption kinetics and isotherms data well fitted the pseudo-second-order model and the Langmuir model, respectively. Under the optimized pH and initial concentration, the maximum adsorption capacity was about 529.1 mg g-1 for MB in 20 min and 324.7 mg g-1 for Cu(II) in 16 min, respectively, exhibiting a better adsorption performance than other GO-based adsorbents reported recently. More importantly, the synthesized adsorbent could be effectively regenerated and repeatedly utilized without significant capacity loss after six times cycles. All the results demonstrated that Fe3O4@SiO2@CS-TETA-GO could be used as an excellent adsorbent for the adsorption of Cu(II) and MB in many fields.
U.S. Environmental Protection Agency — The data set is a matrix of cellular biochemical (metabolites) in HepG2 cells treated with various metal oxide nanomaterials composed of CeO2, SiO2 and CuO. This...
Full Text Available The interactions of magnesia-chromite refractory brick with Cu-Na2O.2SiO2 and CuO-Na2O.2SiO2 melts are studied and the chemical durability of corrosion products in water is evaluated. The corrosion tests confirm intensive infiltration of the slag melts into the tested refractory bricks and formation of Cr(6+ compounds. The molten copper partially oxidizes during corrosion test by air and penetrates into bricks. Interactions among periclase (MgO and chromite (FeCr2O4 grains with the melt Na2O.2SiO2 and copper oxides makes possible to form several compounds (e.g. Cu2MgO3, CuCrO4, CaCrO4, Na2CrO4, MgCrO4. Just the marked yellow spots, which were observed on the corroded brick surface after 30 days of free storage, suggest hydration of the high-temperature corrosion products. The yellow color of spots points out to chromates as Na2CrO4 and MgCrO4, which are well soluble in water. The leaching of corroded bricks in water (batch leaching test of a ratio of S (solid : W (water = 0.1 taking up to 28 days confirmed the Cr, Na, Mg and Ca ions leach-out. The pH value of solution increased up to 9 during leaching mainly as a consequence of elevated Na+ ion concentration. The Cr ion concentration rises in the solution up to 1 mmol.l-1. The observed moderate decrease of Cr ion concentration in the solution with the length of leaching indicates super-saturation of the solution and precipitation of the products.
Ikeda, Akihiro; Sakamoto, Atsushi; Hattori, Reiji; Kuroki, Yukinori
Electroless Ni-B was plated on SiO 2 as a barrier layer against Cu diffusion for through-Si via (TSV) interconnections in a 3-dimensional multi-chip package. The electroless Ni-B was deposited on the entire area of the SiO 2 side wall of a deep via with vapor phase pre-deposition of 3-aminopropyl-triethoxysilane on the SiO 2 . The carrier lifetimes in the Si substrates plated with Ni-B/Cu did not decrease with an increase in annealing temperature up to 400 deg. C . The absence of degradation of carrier lifetimes indicates that Cu atoms did not diffuse into the Si through the Ni-B. The advantages of electroless Ni-B (good conformal deposition and forming an effective diffusion barrier against Cu) make it useful as a barrier layer for TSV interconnections in a 3-dimensional multi-chip package
De Los Santos Valladares, L.; Salinas, D. Hurtado; Dominguez, A. Bustamante; Najarro, D. Acosta; Khondaker, S.I.; Mitrelias, T.; Barnes, C.H.W.; Aguiar, J. Albino; Majima, Y.
In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO 2 /Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 °C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution Cu → Cu + Cu 2 O → Cu 2 O → Cu 2 O + CuO → CuO was detected. Pure Cu 2 O films are obtained at 200 °C, whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300–550 °C. In both oxides, crystallization improves with annealing temperature. A resistivity phase diagram, which is obtained from the current–voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite size when the temperature increases. - Highlights: ► The crystallization and electrical resistivity of oxides in a Cu films are studied. ► In annealing Cu films, the phase evolution Cu + Cu 2 O → Cu 2 O → Cu 2 O + CuO → CuO occurs. ► A resistivity phase diagram, obtained from the current–voltage response, is presented. ► Some decreases in the resistivity may be related to the crystallization.
To better assess potential hepatotoxicity of nanomaterials, human liver HepG2 cells were exposed for 3 days to five different CeO2 (either 30 or 100 μg/ml), 3 SiO2 based (30 μg/ml) or 1 CuO (3 μg/ml) nanomaterials with dry primary particle sizes ranging from 15 to 213 nm. Metabol...
To better assess potential hepatotoxicity of nanomaterials, human liver HepG2 cells were exposed for three days to 5 different CeO2 (either 30 or 100 ug/ml), 3 SiO2 based (30 ug/ml) or 1 CuO (3 ug/ml) nanomaterials with dry primary particle sizes ranging from 15 to 213 nm. Metab...
Full Text Available SiO2 or Cu-doped SiO2 (Cu:SiO2 insulating films combined with Cu or W upper electrodes were constructed on the W/Si substrates to form the conductive-bridging RAM (CB-RAM cells. The CB-RAMs were then subjected to a constant-voltage stressing (CVS at room temperature. The experimental results show that the room-temperature CVS treatment can effectively affect the current conduction behavior and stabilize the resistive switching of the memory cells. After the CVS, the current conduction mechanisms in the high resistance state during the set process of the Cu/Cu:SiO2/W cell can be changed from Ohm’s law and the space charge limited conduction to Ohm’s law, the Schottky emission, and the space charge limited conduction. Presumably, it is due to the breakage of the conduction filaments during the CVS treatment that the conduction electrons cannot go back to the back electrode smoothly.
Full Text Available In this work is described a means of improving the chemical stability of Cu2O@SiO2, Cu2O@SnO2 and Cu2O@TiO2 materials. The SiO2, SnO2 and TiO2 coated samples were stable from pH 3 to pH 10 for up to seven days. To determine the stability of the coated nanoparticles, and their colloidal solutions under acidic and basic conditions, colloidal nanoparticle solutions with various pH values were prepared and monitored over time. Details of the effect of variations in pH on the phase stability of core-shell type Cu2O were characterized using transmission electron microscopy and X-ray diffraction.
Liang, Yanjie; Noh, Hyeon Mi; Park, Sung Heum; Choi, Byung Chun; Jeong, Jung Hyun
Nowadays, in view of health and safety demands, the controlled design of selective and sensitive sensors for Cu2+ detection is of considerable importance. Therefore, we construct herein core-shell colloidal GdVO4:Eu3+@SiO2 nanocrystals (NCs) as optical sensor for the detection of Cu2+, which were synthesized by a facile hydrothermal reaction and encapsulated with a uniform layer of ultrathin silica through a sol-gel strategy. The NCs present strong red emission due to energy transfer from VO43- groups to Eu3+ when exciting with ultraviolet (UV) light. This intense red emission from Eu3+ could be selectively quenched in the presence of Cu2+ in comparison to other metal ions and the limit of detection is as low as 80 nM in aqueous solution. It is revealed that the spectral overlap between the emission band of NCs and the absorption of Cu2+ accounts for this intriguing luminescence behavior. The detection ability is highly reversible by the addition of ethylenediaminetetraacetic acid (EDTA) with the recovery of almost 100% of the original luminescence. The luminescence quenching and recovery processes can be performed repeatedly with good sensing ability. These remarkable performances allow the colloidal GdVO4:Eu3+@SiO2 NCs a promising fluorescence chemosensor for detecting Cu2+ ions in aqueous solution.
Nasrollahzadeh, Mahmoud; Sajjadi, Mohaddeseh; Khonakdar, Hossein Ali
In this study, a convenient method for the synthesis of arylaminotetrazoles has been developed using a copper (II)-aminotetrazole complex immobilized on silica-coated Fe3O4 (Fe3O4@SiO2) nanoparticles (Fe3O4@SiO2-aminotet-Cu(II)) as a novel and efficient magnetically catalyst. The constructed superparamagnetic core-shell nanoparticles were successfully prepared, as proven using different spectroscopic techniques such as fourier-transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), transmission electron microscope (TEM), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), thermogravimetry and differential thermogravimetry (TG-DTG) and vibrating sample magnetometer (VSM) analysis. The applicability of Fe3O4@SiO2-aminotet-Cu(II) magnetic catalyst allows the efficient synthesis of a variety of arylaminotetrazoles from the reaction between various arylcyanamides with sodium azide in high yields. The effect of catalyst loading was investigated. In addition, the reaction mechanism for the synthesis of arylaminotetrazoles was reasonably proposed. Results show that the 1-aryl-5-amino-1H-tetrazole (B isomer) and 5-arylamino-1H-tetrazole (A isomer) can be obtained from the arylcyanamides carrying electron-donating and electron-withdrawing substituents, respectively. This procedure offers a simple methodology, relatively short reaction times, easy work-up, high yields of the products and a cleaner reaction with elimination of hydrazoic acid (HN3). Moreover, catalyst can be conveniently recovered through the use of external magnet and reused for at least 6 times without any significant loss of its activity.
Nogami, Masayuki; Quang, Vu Xuan; Ohki, Shinobu; Deguchi, Kenzo; Shimizu, Tadashi
Controlling valence state of metal ions that are doped in materials has been widely applied for turning optical properties. Even though hydrogen has been proven effective to reduce metal ions because of its strong reducing capability, few comprehensive studies focus on practical applications because of the low diffusion rate of hydrogen in solids and the limited reaction near sample surfaces. Here, we investigated the reactions of hydrogen with Cu 2+ -doped Na 2 O-Al 2 O 3 -SiO 2 glass and found that a completely different reduction from results reported so far occurs, which is dominated by the Al/Na concentration ratio. For Al/Na glass body. For Al/Na > 1, on the other hand, the reduction of Cu 2+ ions occurred simultaneously with the formation of OH bonds, whereas the reduced Cu metal moved outward and formed a metallic film on glass surface. The NMR and Fourier transform infrared results indicated that the Cu 2+ ions were surrounded by Al 3+ ions that formed AlO 4 , distorted AlO 4 , and AlO 5 units. The diffused H 2 gas reacted with the Al-O - ···Cu + units, forming Al-OH and metallic Cu, the latter of which moved freely toward glass surface and in return enhanced H 2 diffusion.
Xu, Cui; Zhang, Hao; Guan, Ruifang
Fluorescent compound without typical fluorophores was synthesized with citric acid (CA) and aminopropyltriethoxysilane (APTS) firstly, and then it was grafted to the surface of the prepared SiO2 microspheres by chemical reaction. The fluorescent SiO2 microspheres with good fluorescent properties were obtained by optimizing the reaction conditions. And the morphology and structure of the fluorescent SiO2 microspheres have been characterized by scanning electron microscopy (SEM) and fourier transform infrared (FTIR) spectroscopy. The results showed that the preparation of fluorescent SiO2 microspheres have good monodispersity and narrow particle size distribution. Moreover, the fluorescent SiO2 microspheres can be applied to detect Fe3+ in aqueous solution, prepare fluorescent SiO2 rubber, and have potential to be applied in the fluorescent labeling and fingerprint appearing technique fields.
Full Text Available The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer. Dielectric oxidation temperature dependent TID effects are also studied. Holes trapping induced negative threshold voltage shift is smaller for SiO2 at lower oxidation temperature. Gate bias during irradiation leads to different VTH shift for different gate dielectrics. Single SiO2 layer shows the worst negative VTH at VG=0 V, while double Si3N4/SiO2 shows negative VTH shift at VG=-5 V, positive VTH shift at VG=10 V, and negligible VTH shift at VG=0 V.
Obata, Seiji; Sato, Minoru; Akada, Keishi; Saiki, Koichiro
A high throughput synthesis method of graphene has been required for a long time to apply graphene to industrial applications. Of the various synthesis methods, the chemical exfoliation of graphite via graphene oxide (GO) is advantageous as far as productivity is concerned; however, the quality of the graphene produced by this method is far inferior to that synthesized by other methods, such as chemical vapor deposition on metals. Developing an effective reduction and restoration method for GO on dielectric substrates has been therefore a key issue. Here, we present a method for changing GO deposited on a dielectric substrate into high crystallinity graphene at 550 °C this method uses CH4/H2 plasma and a Cu catalyst. We found that Cu remotely catalyzed the high degree reduction and restoration of GO on SiO2 and the effect ranged over at least 8 mm. With this method, field-effect transistor devices can be fabricated without any post treatment such as a transfer process. This plasma treatment increased electron and hole mobilities of GO to 480 cm2 V‑1 s‑1 and 460 cm2 V‑1 s‑1 respectively; these values were more than 50 times greater than that of conventional reduced GO. Furthermore, the on-site conversion ensured that the shape of the GO sheets remained unchanged after the treatment. This plasma treatment realizes the high throughput synthesis of a desired shaped graphene on any substrate without any residue and damage being caused by the transfer process; as such, it expands the potential applicability of graphene.
Xiaodong Ma; Xi Feng; Xuan He; Hongwen Guo; Lu Lü
Hierachically porous (HP) CuO/α-Fe2O3/SiO2 composite material was fabricated by sol-gel method and multi-hydrothermal processes using HP-SiO2 as support.The resulting material was characterized by N2 adsorption-desorption,X-ray diffraction and scanning electron microscopy.The as-prepared CuO/Fe2O3/HP-SiO2 sample,with α-Fe2O3 and CuO nanocrystals,possessed a co-continuous skeleton,through-macroporous and mesoporous structure.Its catalytic behavior for CO and o-DCB oxidation was investigated.The result showed that CuO/Fe2O3/HP-SiO2 catalyst exhibited high catalytic activity for both CO and o-DCB oxidation,indicating its potential application in combined abatement of CO and chlorinated volatile organic compounds.
Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi
Electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces have been investigated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. From the analysis of the cut-off energy for secondary photoelectrons measured at each thinning step of a dielectric layer by wet-chemical etching, an abrupt potential change caused by electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces has been clearly detected. Al-gate MOS capacitors with thermally-grown SiO_2 and a HfO_2/SiO_2 dielectric stack were fabricated to evaluate the Al work function from the flat band voltage shift of capacitance-voltage (C-V) characteristics. Comparing the results of XPS and C-V measurements, we have verified that electrical dipole formed at the interface can be directly measured by photoemission measurements. (author)
Degueldre, C.; Wernli, B.
SiO 2 colloids have been identified as a potential vector for enhancing radionuclide transport in granitic groundwater and in concrete pore water. The sorption behaviour of 241 Am(III) on SiO 2 colloids was studied as a function of americium concentration pH (5-12), colloid concentration, ionic strength, temperature and SiO 2 allotropic species. The Am(III) sorption mechanism on amorphous silica is different from that on quartz. For SiO 2(amorphous) solution, the variation of log K p (ml g -1 ) with pH is linear (pH=5-9) with a slope of +1 indicating a one proton exchange mechanism. The colloid concentration (ppm) affects the sorption and log K p 3.7-0.67 log [SiO 2 ] (pH = 6). K p increases insignificantly when the ionic strength decreases. It shows no significant variation, however, with the Am concentration. On amorphous silica, the Am(III) sorption is driven by proton exchange from the silanol groups. For SiO 2 (quartz), log K p is constant over a large range of quartz concentration in suspension and the variation of log K p with pH is about linear (pH = 5-12), with a slope of 0.28, indicating a more complex exchange mechanism. Reactions taking into account the interaction of positive Am(OH) w (3-w)+ species on to the negatively charged quartz surface are suggested. (author)
Chen, J.-H.; Jang, C.; Ishigami, M.; Xiao, S.; Cullen, W. G.; Williams, E. D.; Fuhrer, M. S.
We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO 2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the effects of charged impurities and short-range scatterers. The results show that charged impurities indeed lead to a conductivity linear in density ( σ(n)∝n) in graphene, with a scattering magnitude that agrees quantitatively with theoretical estimates; increased dielectric screening reduces the scattering from charged impurities, but increases the scattering from short-range scatterers. We evaluate the effects of the corrugations (ripples) of graphene on SiO 2 on transport by measuring the height-height correlation function. The results show that the corrugations cannot mimic long-range (charged impurity) scattering effects, and have too small an amplitude-to-wavelength ratio to significantly affect the observed mobility via short-range scattering. Temperature-dependent measurements show that longitudinal acoustic phonons in graphene produce a resistivity that is linear in temperature and independent of carrier density; at higher temperatures, polar optical phonons of the SiO 2 substrate give rise to an activated, carrier density-dependent resistivity. Together the results paint a complete picture of charge carrier transport in graphene on SiO 2 in the diffusive regime.
Surowska, B.; Walczak, M.; Bienias, J.
The paper presents the study of intermediate SiO 2 and SiO 2 -TiO 2 sol-gel coatings and dental porcelain coatings on Ti6Al4VELI titanium alloy. Surface microstructures and wear behaviour by pin-on-disc method of the ceramic coatings were investigated. The analysis revealed: (1) a compact, homogeneous SiO 2 and SiO 2 -TiO 2 coating and (2) that intermediate coatings may provide a durable joint between metal and porcelain, and (3) that dental porcelain on SiO 2 and TiO 2 coatings shows high wear resistance. (author)
Lim, Namsoo; Yoo, Tae Jin; Kim, Jin Tae; Pak, Yusin; Kumaresan, Yogeenth; Kim, Hyeonghun; Kim, Woochul; Lee, Byoung Hun; Jung, Gun Young
A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates
Wang, D.; Penner, S.; Su, D.S.; Rupprechter, G.; Hayek, K.; Schloegl, R.
Regularly grown Pt particles supported by amorphous SiO 2 were heated in hydrogen at 873 K after an oxidising treatment. The morphological and structural changes were studied by electron microscopy. Platinum silicides Pt 3 Si with L1 2 (Cu 3 Au) structure, monoclinic Pt 3 Si and tetragonal Pt 12 Si 5 were identified after the treatment. The mechanisms of coalescence of the particles and the formation of irregular large particles are suggested. A topotactic structural transformation accompanied with the migration of Si from the substrate to the particles are suggested to take place during Pt 3 Si formation
Fleetwood, D.M.; Winokur, P.S.; Flament, O.; Leray, J.L.
Electron trapping near the Si/SiO 2 interface plays a crucial role in mitigating the response of MOS devices to ionizing radiation or high-field stress. These electrons offset positive charge due to trapped holes, and can be present at densities exceeding 10 12 cm -2 in the presence of a similar density of trapped positive charge. The nature of the defects that serve as hosts for trapped electrons in the near-interfacial SiO 2 is presently unknown, although there is compelling evidence that these defects are often intimately associated with trapped holes. This association is depicted most directly in the model of Lelis et al., which suggests that trapped electrons and holes occupy opposite sides of a compensated E center in SiO 2 . Charge exchange between electron traps and the Si can occur over a wide range of time scales, depending on the trap depth and location relative to the Si/SiO 2 interface. Here the authors report a detailed study of the stability of electron traps associated with trapped holes near the Si/SiO 2 interface
Gutierrez W, C.; Mondragon G, G.; Perez H, R.; Mendoza A, D.
Metallic nanoparticles was synthesized in SiO 2 matrices by means of a process of two stages. The first one proceeded via sol-gel, incorporating the metallic precursors to the reaction system before the solidification of the matrix. Later on, the samples underwent a thermal treatment in atmosphere of H 2 , carrying out the reduction of the metals that finally formed to the nanoparticles. Then it was detected the presence of smaller nanoparticles than 20 nm, dispersed and with the property of being liberated easily of the matrix, conserving a free surface, chemically reactive and with response to external electromagnetic radiation. The system SiO 2 -Pd showed an important thermoluminescent response. (Author)
Robinson, I. K.; Waskiewicz, W. K.; Tung, R. T.
X-ray diffraction has been used to measure the intensity profile of the two-dimensional rods of scattering from a single interface buried inside a bulk material. In both Si(111)/a-Si and Si(111)/SiO2 examples there are features in the perpendicular-momentum-transfer dependence which are not expec...... are not expected from an ideal sharp interface. The diffraction profiles are explained by models with partially ordered layers extending into the amorphous region. In the Si(111)/a-Si case there is clear evidence of stacking faults which are attributed to residual 7×7 reconstruction....
Fu Zhiqiang; Jean-Charles, R.
The stability behaviours of SiC coatings and SiO 2 /SiC coatings in helium with little impurities are studied by HSC Chemistry 4.1, the software for analysis of Chemical reaction and equilibrium in multi-component complex system. It is found that in helium with a low partial pressure of oxidative impurities under different total pressure, the key influence factor controlling T cp of SiC depends is the partial pressure of oxidative impurities; T cp of SiC increases with the partial pressure of oxidative impurities. In helium with a low partial pressure of different impurities, the key influence factor of T cs of SiO 2 are both the partial pressure of impurities and the amount of impurities for l mol SiO 2 ; T cs of SiO 2 increases with the partial pressure of oxidative impurities at the same amount of the impurities for 1 mol SiO 2 while it decreases with the amount of the impurities for 1 mm SiO 2 at the same partial pressure of the impurities. The influence of other impurities on T cp of SiC in He-O 2 is studied and it is found that CO 2 , H 2 O and N-2 increase T cp of SiC in He-O 2 while H 2 , CO and CH 4 decrease T cp of SiC He-O 2 . When there exist both oxidative impurities and reductive impurities, their effect on T cs of SiO 2 can be suppressed by the other. In HTR-10 operation atmosphere, SiO 2 /SiC coatings can keep stable status at higher temperature than SiC coatings, so SiO 2 /SiC coatings is more suitable to improve the oxidation resistance of graphite in HTR-10 operation atmosphere compared with SiC coatings. (authors)
Benedetto, F. E.; Prado, M. O.
Vitreous SiO 2 porous matrices can be used in many applications involving the uptake of chemical species on its solid surface. In this work, vitreous silica sponges were prepared from a sodium borosilicate glass manufactured in our laboratory. The product obtained was then separated into phases with subsequent leaching of the soluble phase rich in B and Na. The resulting porous matrices have a specific surface of 35 m2/gr. Adsorption of uranyl ions onto the SiO 2 porous surface was studied to evaluate the use of this material as a filter for treatment of uranium containing water. The effects of contact time, adsorbent mass and equilibrium concentration of solution were studied. The porous adsorbent exhibits a pseudo-second-order kinetic behavior. The sponges with adsorbed uranium were thermally sealed as a way of U immobilization. Retention of uranium was confirmed during the matrix sealing by TGA. Uranium concentration before and after adsorption tests were made by means of ICP-OES. For uranium concentration of 800 ppm, 72 hours contact time and pH of 3.5, the amount of uranium adsorbed was 21.06 ± 0.02 mg U per gram of vitreous porous SiO 2 . (author)
Yue, Yunliang; Wang, Jianwei; Zhang, Yuqi; Song, Yu; Zuo, Xu
Dozens of models are investigated by the first-principles calculations to simulate the interactions of an atomic hydrogen with a defect-free random network of amorphous SiO2 (a-SiO2) and oxygen vacancies. A wide variety of stable configurations are discovered due to the disorder of a-SiO2, and their structures, charges, magnetic moments, spin densities, and density of states are calculated. The atomic hydrogen interacts with the defect-free a-SiO2 in positively or negatively charged state, and produces the structures absent in crystalline SiO2. It passivates the neutral oxygen vacancies and generates two neutral hydrogenated E‧ centers with different Si dangling bond projections. Electron spin resonance parameters, including Fermi contacts, and g-tensors, are calculated for these centers. The atomic hydrogen interacts with the positive oxygen vacancies in dimer configuration, and generate four different positive hydrogenated defects, two of which are puckered like the Eγ‧ centers. This research helps to understand the interactions between an atomic hydrogen, and defect-free a-SiO2 and oxygen vacancies, which may generate the hydrogen-complexed defects that play a key role in the degeneration of silicon/silica-based microelectronic devices.
Kaur, Pardeep; Singh, K. J.
Bioactive sample with the nominal composition of 64SiO2-26CaO-5P2O5-5CuO has been prepared in the laboratory by using the sol-gel technique. The bioactivity of the prepared sample has been analyzed by using the Tris Simulated Body Fluid which has also been prepared in the laboratory. XRD and Raman techniques have been employedto probe the formation of hydroxyapatite layer. pH studies has also been undertaken to check the acidic/non-acidic behavior of sample. Growth of hydroxyapatite layer has been observed after one day on the surface of the sample. Moreover, sample has been observed to be non-acidic in nature.
Full Text Available The SiO2/PSN core-shell microspheres were prepared via an emulsion reaction combined with the polymer-derived ceramics (PDCs method using polysilazane (PSN in situ polymerization on the surface of SiO2 modified by silane coupling agents MPS, followed by pyrolysis process to obtain SiO2/SiCN core-shell ceramic microspheres. The effects of raw mass ratio, curing time and pyrolysis temperature on the formation and the morphology of core-shell microspheres were studied. The morphology, chemical composition and phase transformation were characterized by SEM, EDS, TEM, FT-IR and XRD. The results show that after reaction for 4h at 200℃, SiO2 completely coated PSN forms a core-shell microsphere with rough surface when the mass ratio of SiO2 and PSN is 1:4; when pyrolysis temperature is at 800-1200℃, amorphous SiO2/SiCN core-shell ceramic microspheres are prepared; at 1400℃, the amorphous phase partially crystallizes to produce SiO2, SiC and Si3N4 phase.
Pankratov, V.; Osinniy, Viktor; Kotlov, A.
done. It is demonstrated that the experimentally determined blueshift of the photoluminescence excitation and absorption spectra is larger than the theoretical predictions. The influence of point defects in the SiO2 matrix on the optical and luminescence properties of the embedded Si nanocrystals...... is discussed. Moreover, it is demonstrated that no energy transfer takes place between the SiO2 and Si nanocrystals when the excitation energy is higher than the band-to-band transition energy in SiO2....
Page, Alister J.; Chandrakumar, K. R. S.; Irle, Stephan; Morokuma, Keiji
Quantum chemical molecular dynamics (QM/MD) simulations of pristine and carbon-doped SiO 2 nanoparticles have been performed between 1000 and 3000 K. At temperatures above 1600 K, pristine nanoparticle SiO 2 decomposes rapidly, primarily forming SiO. Similarly, carbon-doped nanoparticle SiO 2 decomposes at temperatures above 2000 K, primarily forming SiO and CO. Analysis of the physical states of these pristine and carbon-doped SiO 2 nanoparticles indicate that they remain in the solid phase throughout decomposition. This process is therefore one of sublimation, as the liquid phase is never entered. Ramifications of these observations with respect to presently debated mechanisms of carbon nanotube growth on SiO 2 nanoparticles will be discussed.
Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.
Silicon (100) wafers are ubiquitous in microfabrication and, accordingly, their surface characteristics are important. Herein, we report the analysis of Si (100) via X-ray photoelectron spectroscopy (XPS) using monochromatic Al K radiation. Survey scans show that the material is primarily silicon and oxygen, and the Si 2p region shows two peaks that correspond to elemental silicon and silicon dioxide. Using these peaks the thickness of the native oxide (SiO2) was estimated using the equation of Strohmeier.1 The oxygen peak is symmetric. The material shows small amounts of carbon, fluorine, and nitrogen contamination. These silicon wafers are used as the base material for subsequent growth of templated carbon nanotubes.
Prapruddivongs, C.; Apichartsitporn, M.; Wongpreedee, T.
In this work, biodegradation behavior of poly (lactic acid) (PLA) and crosslinked PLA filled with two types of SiO2, precipitated SiO2 (commercial SiO2) and SiO2 from rice husk ash, were studied. Rice husks were first treated with 2 molar hydrochloric acid (HCl) to produce high purity SiO2, before burnt in a furnace at 800°C for 6 hours. All components were melted bending by an internal mixer then hot pressed using compression molder to form tested specimens. FTIR spectra of SiO2 and PLA samples were investigated. The results showed the lack of silanol group (Si-OH) of rice husk ash after steric acid surface modification, while the addition of particles can affect the crosslinking of the PLA. For biodegradation test by evaluating total amount of carbon dioxide (CO2) evolved during 60 days incubation at a controlled temperature of 58±2°C, the results showed that the biodegradation of crosslinked PLA occurred slower than the neat PLA. However, SiO2 incorporation enhanced the degree of biodegradation In particular, introducing commercial SiO2 in PLA and crosslinked PLA tended to clearly increase the degree of biodegradation as a consequence of the more accelerated hydrolysis degradation.
Suzuki, R.; Ohdaira, T.; Uedono, A.; Kobayashi, Y.
Positron and positronium (Ps) behavior in SiO 2-Si have been studied by means of positron annihilation lifetime spectroscopy (PALS) and age-momentum correlation (AMOC) spectroscopy with a pulsed slow positron beam. The PALS study of SiO 2-Si samples, which were prepared by a dry-oxygen thermal process, revealed that the positrons implanted in the Si substrate and diffused back to the interface do not contribute to the ortho-Ps long-lived component, and the lifetime spectrum of the interface has at least two components. From the AMOC study, the momentum distribution of the ortho-Ps pick-off annihilation in SiO 2, which shows broader momentum distribution than that of crystalline Si, was found to be almost the same as that of free positron annihilation in SiO 2. A varied interface model was proposed to interpret the results of the metal-oxide-semiconductor (MOS) experiments. The narrow momentum distribution found in the n-type MOS with a negative gate bias voltage could be attributed to Ps formation and rapid spin exchange in the SiO 2-Si interface. We have developed a two-dimensional positron lifetime technique, which measures annihilation time and pulse height of the scintillation gamma-ray detector for each event. Using this technique, the positronium behavior in a porous SiO 2 film, grown by a sputtering method, has been studied.
Zheng Yansheng; He Yi; Qing Yongquan; Zhuo Zhihao; Mo Qian
Highlights: ► The coating showed the water contact angle of 165° and the water sliding angle of 6°. ► The hierarchical structure with the low surface energy leads to surface superhydrophobicity. ► We demonstrated a simple yet efficient approach to preparing superhydrophobic surface. - Abstract: Superhydrophobic coating has been fabricated on the glass substrates with modified SiO 2 sol and polytetrafluoroethylene emulsion through a sol–gel process. SiO 2 sol was modified with γ-glycidoxypropyl trimethoxysilane. The coatings were characterized by water contact angle measurement, Scanning electron microscope, Fourier transform infrared spectrometry, X-ray photoelectron spectroscopy and thermal synthetic analysis. The experimental results show that coatings exhibited superhydrophobic and heat-resistant property with a water average contact angle of 156° and sliding angle of 6°, coating has a rough surface with both micro- and nanoscale structures, γ-glycidoxypropyl trimethoxysilane enhanced the hydrophobicity of the coatings. Low surface energy of polymer and special structure of the coatings were responsible for the hydrophobic of the surfaces.
A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates. Then, bottom-contact graphene field effect transistors (G-FETs) were fabricated on the NP SiO2/Si substrate to measure the transfer curves. The graphene transferred onto the NP SiO2/Si substrate showed relatively n-doped behavior compared to the graphene transferred onto a flat SiO2/Si substrate, as evidenced by the blue-shift of the 2D peak position (∼2700 cm−1) in the Raman spectra due to contact doping. As the porosity increased within the substrate, the Dirac voltage shifted to a more positive or negative value, depending on the initial doping type (p- or n-type, respectively) of the contact doping. The Dirac voltage shifts with porosity were ascribed mainly to the compensation for the reduced capacitance owing to the SiO2–air hetero-structured dielectric layer within the periodically aligned nanopores capped by the suspended graphene (electrostatic doping). The hysteresis (Dirac voltage difference during the forward and backward scans) was reduced when utilizing an NP SiO2/Si substrate with smaller pores and/or a low porosity because fewer H2O or O2 molecules could be trapped inside the smaller pores.
Kim, Jong-Woong; Kim, Young-Seok; Hong, Sung-Jei; Hong, Tae-Hwan; Han, Jeong-In
SiO2 thin film has a wide range of applications, including insulation layers in microelectronic devices, such as semiconductors and flat panel displays, due to its advantageous characteristics. Herein, we developed a new eco-friendly method for manufacturing SiO2 nanoparticles and, thereby, SiO2 paste to be used in the digital printing process for the fabrication of SiO2 film. By excluding harmful Cl- and NO3- elements from the SiO2 nanoparticle synthetic process, we were able to lower the heat treatment temperature for the SiO2 precursor from 600 to 300 °C and the diameter of the final SiO2 nanoparticles to about 14 nm. The synthesized SiO2 nanoparticles were dispersed in an organic solvent with additives to make a SiO2 paste for feasibility testing. The SiO2 paste was printed onto a glass substrate to test the feasibility of using it for digital printing. The insulation resistance of the printed film was high enough for it to be used as an insulation layer for passivation.
Chavez R, F.; Rodriguez I, I.; Petranovskii, V.
The morphological and spectroscopic changes caused by reduction of ion-exchanged CuZSM5 samples with SiO 2 /Al 2 O 3 molar ratios (MR) of 30 and 70 in H 2 flow at 150 and 350 grades C are discussed. the nominal copper loading was of 1% by weight. Scanning electron microscopy of CuZSM5 sample set showed that the treatment in reducing atmosphere at 350 grades C produces particle agglomeration and smoother surface texture that treatment at 150 grades C, this effect was more pronounced for the sample with MR 30. Furthermore, the particles corresponding to the sample with MR 30 are of irregular shape and have rough texture (cubic or rectangular crystals, protrusions) while the particles of the sample with MR 70 are in the majority of spherical smooth texture (leaf-shaped crystals/platelet, reclining). Energy Dispersive X-ray spectroscopy elemental analysis reveals a heterogeneous distribution of copper as well other elements in each sample. The micro-Raman spectroscopy shows some changes in the vibrational modes for the studied samples. (Author)
Conrad, Brad; Groce, Michelle; Cullen, William; Pimpinelli, Alberto; Williams, Ellen; Einstein, Ted
We utilize scanning tunneling microscopy to characterize the nucleation, growth, and morphology of C60 on ultrathin SiO2 grown at room temperature. C60 thin films are deposited in situ by physical vapor deposition with thicknesses varying from <0.05 to ˜1 ML. Island size and capture zone distributions are examined for a varied flux rate and substrate deposition temperature. The C60 critical nucleus size is observed to change between monomers and dimers non-monotonically from 300 K to 500 K. Results will be discussed in terms of recent capture zone studies and analysis methods. Relation to device fabrication will be discussed. doi:10.1016/j.susc.2011.08.020
Zeb, F.; Nadeem, K.; Shah, S. Kamran Ali; Kamran, M.; Gul, I. Hussain; Ali, L.
We studied the surface spins disorder in uncoated and silica (SiO 2 ) coated maghemite (γ-Fe 2 O 3 ) nanoparticles using temperature and time dependent magnetization. The average crystallite size for SiO 2 coated and uncoated nanoparticles was about 12 and 29 nm, respectively. Scanning electron microscopy (SEM) showed that the nanoparticles are spherical in shape and well separated. Temperature scans of zero field cooled (ZFC)/field cooled (FC) magnetization measurements showed lower average blocking temperature (T B ) for SiO 2 coated maghemite nanoparticles as compared to uncoated nanoparticles. The saturation magnetization (M s ) of SiO 2 coated maghemite nanoparticles was also lower than the uncoated nanoparticles and is attributed to smaller average crystallite size of SiO 2 coated nanoparticles. For saturation magnetization vs. temperature data, Bloch's law (M(T)= M(0).(1− BT b )) was fitted well for both uncoated and SiO 2 coated nanoparticles and yields: B =3×10 −7 K -b , b=2.22 and B=0.0127 K -b , b=0.57 for uncoated and SiO 2 coated nanoparticles, respectively. Higher value of B for SiO 2 coated nanoparticles depicts decrease in exchange coupling due to enhanced surface spins disorder (broken surface bonds) as compared to uncoated nanoparticles. The Bloch's exponent b was decreased for SiO 2 coated nanoparticles which is due to their smaller average crystallite size or finite size effects. Furthermore, a sharp increase of coercivity at low temperatures (<25 K) was observed for SiO 2 coated nanoparticles which is also due to contribution of increased surface anisotropy or frozen surface spins in these smaller nanoparticles. The FC magnetic relaxation data was fitted to stretched exponential law which revealed slower magnetic relaxation for SiO 2 coated nanoparticles. All these measurements revealed smaller average crystallite size and enhanced surface spins disorder in SiO 2 coated nanoparticles than in uncoated γ-Fe 2 O 3 nanoparticles
Pi, X.D.; Coleman, P.G.; Harding, R.; Davies, G.; Gwilliam, R.M.; Sealy, B.J.
Positron annihilation spectroscopy has been employed to study changes in the interface region between nanocrystalline Si and SiO 2 , following annealing between 400 deg. C and 900 deg. C in nitrogen or oxygen. With the support of photoluminescence spectroscopy we find that nitrogen and oxygen are trapped in voids at the interface at low temperatures. At temperatures above 700 deg. C both nitrogen and oxygen react with Si nanocrystals, and the resulting volume increase introduces stress in the SiO 2 matrix which is relaxed by the shrinkage of its intrinsic open volume. Oxygen appears to enhance Si diffusion in SiO 2 so that the agglomeration of Si nanocrystals occurs more readily during annealing in oxygen than in nitrogen
Park, Kyoung-Soo; Kim, Youngman
Hexamethyldisilazane (HMDS, [(CH3)3Si]2NH) was used as a precursor to form SiO2 protective coatings on IN738LC alloys by combustion chemical vapor deposition (CCVD). SEM and XPS showed that the processed coatings were composed mainly of SiO2. The amount of HMDS had the largest effect on the size of the SiO2 agglomerates and the thickness of the deposited coatings. The specimens coated with SiO2 using the 0.05 mol/l HMDS solution showed a significantly higher temperature oxidation resistance than those deposited under other conditions.
Daguano, J.K.M.F.; Santos, F.A.; Santos, C.; Marton, L.F.M.; Conte, R.A.; Rodrigues Junior, D.; Melo, F.C.L.
In this work, lithium disilicate glass-ceramics were developed starting of the rice ash- SiO 2 and Li 2 CO 3 powders. The results were compared with glass ceramics based on the lithium disilicate obtained by commercial SiO 2 powders. Glass were melted at 1580 deg C, and annealed at 850 deg C. X-Ray diffraction and scanning electron microscopy were used for characterization of the materials, and hardness and fracture toughness were evaluated using Vickers indentation method. Glasses with amorphous structure were obtained in both materials. After annealing, 'rice-ash' samples presented Li 2 SiO 3 and residual SiO 2 as crystalline phases. On the other side, commercial SiO 2 - Samples presented only Li 2 Si 2 O 5 as crystalline phases and the better results of hardness and fracture toughness. (author)
Full Text Available .physb.2011.09.091 Concentration effect of Tm3+ on cathodoluminescence properties of SiO2: Tm 3+ and SiO2:Ho 3+, Tm3+ systems M.S. Dhlamini, G.H. Mhlongo, H.C. Swart, O.M. Ntwaeaborwa, K.T. Hillie ABSTRACT: Cathodoluminescence (CL) properties of Si...O2 powders activated with thulium (Tm3+) and holmium (Ho3+) ions prepared by a sol–gel process were investigated. Different molar concentrations of Tm3+ co-doped with Ho3+ were studied. The 460 nm peak was monitored and the influence of the beam...
Perez R, J.F.; Jimenez S, S.; Gonzalez H, J.; Vorobiev, Y.V.; Hernandez L, M.A.; Parga T, J.R.
Phonon spectra in SiO 2 sol-gel made glasses annealed under different conditions are investigated using infrared absorption and Raman scattering. These data are compared with those obtained in commercial optical-quality quartz. All the materials exhibit the same phonon bands, the exact position and the intensity depend on the measuring technique and on the sample preparation method. The phonon spectra in this material are interpreted on the basis of a simple quasi-linear description of elastic waves in an O-Si-O chain. It is shown that the main features observed in the range 400-1400 cm -1 can be predicted using a quasi-linear chain model in which the band at 1070 cm -1 is assigned to the longitudinal optical waves in the O-Si-O chain with the smallest possible wavelength at the Brillouin zone boundary, the band located around 450 cm -1 is assigned to the transversal optical waves and the band at 800 cm -1 to the longitudinal acoustical waves with the same wavelength. The degree of structural disorder can be also deduced within the framework of the proposed model. (Author)
The design and fabrication of efficient photothermal materials is the key issue in solar-driven water evaporation. In this work, a robust CuCr2O4/SiO2 composite membrane with outstanding solar-driven water evaporation performance (1.32 kg m−2 h−1) under one sun irradiation is rationally designed and synthesized by using quartz glass fibrous membrane as supporting matrix and stable CuCr2O4 particles as the active light absorber. Instead of coating a separate layer on top of the support, the CuCr2O4 particles are evenly distributed inside the matrix, which endows the membrane with great mechanical strength and excellent wear and abrasion resistance. The highly porous composite survives 6 atm pressure and retains its performance even after 75% of the membrane is removed by sandpaper. This work also looks into a generally overlooked aspect of wet versus dry state of photothermal material and its implications. Interestingly, the composite possesses a gray color with a high reflectance in dry state but turns into deep black with a low reflectance in wet state due to the decreased subsurface scattering and strong NIR light absorbance of water in wet state. This composite material also possesses excellent thermal stability and thermal shock resistance, making it able to be easily recovered by calcination in air or direct burning in fire for contaminants removal. The results demonstrate that this composite is a competitive photothermal material for practical solar distillation and indicate that the optical properties of material in wet state are more relevant to photothermal material screening and optimization for solar distillation.
Angelici, Carlo; Velthoen, Marjolein E Z; Weckhuysen, Bert M.; Bruijnincx, Pieter C A
Silica-magnesia (Si/Mg=1:1) catalysts were studied in the one-pot conversion of ethanol to butadiene. The catalyst synthesis method was found to greatly influence morphology and performance, with materials prepared through wet-kneading performing best both in terms of ethanol conversion and
Huang, C-K; Hou, C-H; Chen, C-C; Tsai, Y-L; Chang, L-M; Wei, H-S; Hsieh, K-H; Chan, C-H
We proposed a novel technique to fabricate colloidal crystals by using monodisperse SiO 2 coated magnetic Fe 3 O 4 (SiO 2 /Fe 3 O 4 ) microspheres. The magnetic SiO 2 /Fe 3 O 4 microspheres with a diameter of 700 nm were synthesized in the basic condition with ferric sulfate, ferrous sulfate, tartaric acid and tetraethyl orthosilicate (TEOS) in the reaction system. Monodisperse SiO 2 /Fe 3 O 4 superparamagnetic microspheres have been successfully used to fabricate colloidal crystals under the existing magnetic field
Barrón Zambrano, J A; Ávila Ortega, A; Muñoz Rodríguez, D; Carrera Figueiras, C; López-Pérez, A J
In this work, a biohybrid material based on SiO 2 -alginate was obtained and its properties of adsorption evaluated using methylene blue as a model dye. The experimental results showed that the biohybrid SiO 2 -alginate has a higher adsorption ability compared to their base compounds (SiO 2 and alginate). Methylene blue adsorption is pH dependent, resulting in a maximum adsorption at pH = 8. The sorption kinetics rate is similar to SiO 2 . Kinetic data were fitted to a model of pseudosecond order. The experimental isotherms fit well the Langmuir model.
Ohta, Hiromichi; Watanabe, Takanobu; Ohdomari, Iwao
Potential energy distribution of interstitial O2 molecule in the vicinity of SiO2/Si(001) interface is investigated by means of classical molecular simulation. A 4-nm-thick SiO2 film model is built by oxidizing a Si(001) substrate, and the potential energy of an O2 molecule is calculated at Cartesian grid points with an interval of 0.05 nm in the SiO2 film region. The result shows that the potential energy of the interstitial site gradually rises with approaching the interface. The potential gradient is localized in the region within about 1 nm from the interface, which coincides with the experimental thickness of the interfacial strained layer. The potential energy is increased by about 0.62 eV at the SiO2/Si interface. The result agrees with a recently proposed kinetic model for dry oxidation of silicon [Phys. Rev. Lett. 96, 196102 (2006)], which argues that the oxidation rate is fully limited by the oxidant diffusion.
structure of the titanium oxide species in the TiO2-doped SiO2 composite films and the photocatalytic reactiv- ity in order to ... gaku D-max γA diffractometer with graphite mono- chromized ... FT–IR absorption spectra of TiO2-doped SiO2 com-.
Assembly of Fe3O4 nanoparticles on SiO2 monodisperse spheres. K C BARICK and D BAHADUR*. Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay,. Mumbai 400 076, India. Abstract. The assembly of superparamagnetic Fe3O4 nanoparticles on submicroscopic SiO2 ...
Chen, T.; Wu, M.Y.; Ishihara, R.; Nomura, K.; Kamiya, T.; Hosono, H.; Beenakker, C.I.M.
In this paper, we were able to crystallize InGaZnO4 (IGZO) by excimer laser on SiO2 substrate. It was observed that uniform  textured polycrystalline IGZO film has been obtained without any grain boundaries and oxygen vacancies on SiO2 substrate. This process is very promising in fabricating
Lazauskas, A.; Guobiene, A.; Prosycevas, I.; Baltrusaitis, V.; Grigaliunas, V.; Narmontas, P.; Baltrusaitis, Jonas
This work investigates water droplet behavior on superhydrophobic (water contact angle value of 162 ± 1°) SiO2 nanocomposite films subjected to repetitive icing/deicing treatments, changes in SiO2 nanocomposite film surface morphology and their non-wetting characteristics. During the experiment,
Full Text Available The experimental conditions were optimized for the synthesis of amorphous SiO2 particles by the reaction of neutralization of sodium silicate solution with H2SO4 solution. Amorphous SiO2 particles were characterized by XRD, FT-IR, FE-SEM, EDS and microelectrophoresis. The amorphous peak was located at 2θ = 21.8º in the XRD pattern. Primary SiO2 particles were ~ 15 to ~ 30 nm in size and they aggregated into bigger particles. Amorphous SiO2 particles showed a specific surface area up to 130 m²g-1, dependent on the parameters of the precipitation process. The EDS spectrum of amorphous SiO2 particles did not show contamination with sulfate or other ions, which cannot be excluded in traces. pHzpc =1.7 was obtained by microelectrophoresis.
Full Text Available We studied the photoluminescence (PL of Si nanocrystals (Si-NCs embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm inside the SiO2 achieving a robust and better protected system. After metal ion implantation (Ag or Au, and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H2/N2 and Ar to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.
B. Pivac; P. Dubček; J. Dasović; H. Zorc; S. Bernstorff; J. Zavašnik; B. Vlahovic
The annealing behavior of very thin SiO2/Ge multilayers deposited on Si substrate by e-gun deposition in high vacuum was explored. It is shown that, after annealing at moderate temperatures (800°C) in inert atmosphere, Ge is completely outdiffused from the SiO2 matrix leaving small (about 3 nm) spherical voids embedded in the SiO2 matrix. These voids are very well correlated and formed at distances governed by the preexisting multilayer structure (in vertical direction) and self-organization ...
Komarov, F.F.; Parkhomenko, I.N.; Vlasukova, L.A.; Mil'chanin, O.V.; Mokhovikov, M.A.; Wendler, E.; Wesch, W.
The structural transformations in SiO 2 layers implanted with high fluence of Sn ions have been investigated. It has been found that post-implantation annealing results in the β-Sn precipitation as well as the formation of SnO 2 -enriched regions in SiO 2 :Sn matrix. The intensive emission in the range of photon energies 1.5 – 3.5 eV is registered for the implanted and annealed samples. We attribute it to the oxygen deficiency centers created in the SiO 2 :Sn matrix and at the 'nanocluster/SiO 2 ' interfaces. (authors)
Raut, A. P.; Deshpande, V. K.
The physical properties like density, glass transition temperature (Tg), and ionic conductivity of lithium borate (LB) glasses with SiO2 addition were measured before and after gamma irradiation. Remarkable changes in properties have been obtained in the physical properties of LB glasses with SiO2 addition and after gamma irradiation. The increase in density and glass transition temperature of LB glasses with SiO2 addition has been explained with the help of increase in density of cross linking due to SiO4 tetrahedra formation. The increase in ionic conductivity with SiO2 addition was explained with the help of ‘mixed glass former effect’. The increase in density and Tg of LB glasses with SiO2 addition after gamma irradiation has been attributed to fragmentation of bigger ring structure into smaller rings, which increases the density of cross linking and hence compaction. The exposure of gamma irradiation has lead to decrease in ionic conductivity of LB glasses with SiO2 addition. The atomic displacement caused by gamma irradiation resulted in filling of interstices and decrease in trapping sites. This explains the obtained decrease in ionic conductivity after gamma irradiation of glasses. The obtained results of effect of SiO2 addition and gamma irradiation on the density, Tg and ionic conductivity has been supported by FTIR results.
Tran Thu Huong; Tran Kim Anh; Le Quoc Minh
Luminescent nanomaterials with one-dimensional (1D) structures have attracted much attention due to their unique properties and potential applications in nanophotonics and nanobiophotonics. In this paper, we report a synthesis of terbium - hydroxide - at - silica Tb(OH) 3 -SiO 2 and Tb(OH) 3 -SiO 2 :Eu 3+ nanotubes. Terbium - hydroxide tubes were synthesized by soft template method. The size of the tubes can be controlled precisely and have outer diameters ranging from 80 to 120 nm, wall thickness of about 30 nm, and lengths ranging from 300 to 800 nm. To fabricate core/shell materials, the seed growth method is used. FESEM, X-ray diffraction, Raman spectra of Tb(OH) 3 and Tb(OH) 3 -SiO 2 nanotubes were investigated. The photoluminescence (PL) spectrum of Tb(OH) 3 under 325 nm excitation consists of four main peaks at 488, 542, 582, and 618 nm. Furthermore, a preliminary suggestion for the mechanism of growth of the Tb(OH) 3 nanotubes using the soft - template synthesis technique has been proposed. The PL intensity from Tb(OH) 3 -SiO 2 or Tb(OH) 3 -SiO 2 :Eu 3+ nanotubes is much stronger than that of Tb(OH) 3 .
van der Marel, C; Verheijen, M.A.; Tamminga, Y; Pijnenburg, RHW; Tombros, N; Cubaynes, F
Ultrathin SiO2 layers are of importance for the semiconductor industry. One of the techniques that can be used to determine the chemical composition and thickness of this type of layers is x-ray photoelectron spectroscopy (XPS). As shown by Seah and Spencer [Surf. Interface Anal. 33, 640 (2002)], it
Zhou, Yingying; Xie, Hui; Zhou, Wancheng; Ren, Zhaowen
SiO2 was successfully coated on the surface of flaky carbonyl iron particles using a chemical bath deposition method in the presence of 3-aminopropyl triethoxysilane (APTES). The morphologies, composition, valence states of elements, as well as antioxidation and electromagnetic properties of the samples were characterized by scanning electron microscope (SEM), energy dispersive spectrometer (EDS), X-ray photoelectron spectroscopy (XPS), thermogravimetric (TG) and microwave network analyzer. TG curve shows the obvious weight gain of carbonyl iron was deferred to 360 °C after SiO2-coated, which can be ascribed to the exits of SiO2 overlayer. Compared with the raw carbonyl iron, SiO2-coated sample shows good wave absorption performance due to its impedance matching. The electromagnetic properties of raw and SiO2-coated carbonyl iron particles were characterized in X band before and after heat treatment at 250 °C for 10 h. It was established that SiO2-coated carbonyl iron demonstrate good thermal stability, indicating SiO2-coating is useful in the usage of microwave absorbers operating at temperature up to 250 °C.
Lynn, K.G.; Asoka-Kumar, P.
The hydrogen atoms are one of the most common impurity species found in semiconductor systems owing to its large diffusivity, and are easily incorporated either in a controlled process like in ion implantation or in an uncontrolled process like the one at the fabrication stage. Hydrogen can passivate dangling bonds and dislocations in these systems and hence can be used to enhance the electrical properties. In a SiO 2 /Si system, hydrogen can passivate electronic states at the interface and can alter the fixed or mobile charges in the oxide layer. Since hydrogen is present in almost all of the environments of SiO 2 /Si wafer fabrication, the activation energy of hydrogen atoms is of paramount importance to a proper understanding of SiO 2 /Si based devices and has not been measured on the technologically most important Si(100) face. There are no direct, nondestructive methods available to observe hydrogen injection into the oxide layer and subsequent diffusion. This study uses the positrons as a ''sensitive'', nondestructive probe to observe hydrogen interaction in the oxide layer and the interface region. We also describe a new way of characterizing the changes in the density of the interface states under a low-temperature annealing using positrons. 9 refs., 6 figs
Lynn, K. G.; Asoka-Kumar, P.
The hydrogen atoms are one of the most common impurity species found in semiconductor systems owing to its large diffusivity, and are easily incorporated either in a controlled process like in ion implantation or in an uncontrolled process like the one at the fabrication stage. Hydrogen can passivate dangling bonds and dislocations in these systems and hence can be used to enhance the electrical properties. In a SiO2/Si system, hydrogen can passivate electronic states at the interface and can alter the fixed or mobile charges in the oxide layer. Since hydrogen is present in almost all of the environments of SiO2/Si wafer fabrication, the activation energy of hydrogen atoms is of paramount importance to a proper understanding of SiO2/Si based devices and has not been measured on the technologically most important Si(100) face. There are no direct, nondestructive methods available to observe hydrogen injection into the oxide layer and subsequent diffusion. The positrons are used as a 'sensitive', nondestructive probe to observe hydrogen interaction in the oxide layer and the interface region. A new way is described of characterizing the changes in the density of the interface states under a low temperature annealing using positrons.
Pan Tao; Jin Minghua; Liu Xiaomei; Du Zhongjun; Zhou Xianqing; Huang Peili; Sun Zhiwei
Objective: To study the cytotoxicity and effect on gap junction intracellular communication (GJIC) of SiO 2 nanoparticles in HL-7702 cells, and to provide experimental basis for toxicity assessment and the security applications of SiO 2 nanoparticles. Methods: Transmission electron microscope (TEM) was used to characterize two kinds of SiO 2 nanoparticles, verifying their size, dispersion and shape; dynamic light scattering (DLS) method was used to analyze the water dispersion and culture medium dispersion of the SiO 2 nanoparticles; MTT assay was carried out to examine the cytotoxicities of the two sizes SiO 2 nanoparticles on the cells; lactate dehydrogenase (LDH) release assay was performed to examine the integrity nano of the cell membrane; Scrape-loading and dye transfer assay was performed to examine the effect of SiO 2 nanoparticles on GJIC. Results: Based on the result of TEM, two kinds of SiO 2 nanoparticles were spherically shaped, uniformly sized and sporadically dispersed; the statistical analysis results showed the diameters of the two nanoparticles were (447.60±20.78) nm and (67.42±5.69) nm, respectively, thus they could be categorized as submicron scale and nano scale. The DLS method results manifested that the hydration nanoparticle sizes of the two SiO 2 nanoparticles were (684.37±18.76) nm, (128.31±7.64) nm in high purity water and (697.02±19.57) nm, (133.74±8.97) nm in RPMI-1640 solution, all the two nanoparticles were well dispersed without aggregation. MTT assay indicated that 24 h after treatment of SiO 2 nanoparticles, the cell viabilities were affected by both the size and the dose of the SiO 2 nanoparticles; the higher the dose was, the less viability the cells exhibited. Moreover, the nano scale particles inflicted more damage to the cells. LDH release assay indicated that the SiO 2 particles could also damage the cell membrane in a dose-dependent and size-dependent way. Scrape-loading and dye transfer assay indicated that the nano
Kachurin, G.A.; Yanovskaya, S.G.; Volodin, V.A.; Kesler, V.G.; Lejer, A.F.; Ruault, M.-O.
Raman scattering, X-ray photoelectron spectroscopy, and photoluminescence have been used to study the formation of silicon nanocrystals in SiO 2 implanted with Si ions. Si clusters have been formed at once in the postimplanted layers, providing the excessive Si concentration more ∼ 3 at. %. Si segregation with Si-Si 4 bonds formation is enhanced as following annealing temperature increase, however, the Raman scattering by Si clusters diminishes. The effect is explained by a transformation of the chain-like Si clusters into compact phase nondimensional structures. Segregation of Si nanoprecipitates had ended about 1000 deg C, but the strong photoluminescence typical for Si nanocrystals manifested itself only after 1100 deg C [ru
Burruel I, S. E.; Cruz V, C.; Salas J, Ch. J.; Bernal, R.; Garcia H, A. R.; Castano, V. M.
Full text: In this work, we evaluated the effect of Cu-dopant concentration in SiO 2 particles on structural and thermoluminescence (Tl) properties, prepared by the sol-gel technique. Tl studies in silica samples containing Cu show an important enhancement of their Tl response when compared with pure silica samples. In the copper doped silica a prominent Tl peak is observed, the glow curve was observed between 70 and 450 degrees C after exposure to beta irradiation. The maximum temperature of the glow peak centered at around 140 degrees C shifts to higher values and the intensity enhancement with increasing Cu content, this glow curve is surely composed of several overlapped individual Tl peaks. Also, the particle size is affected by the concentration of Cu dopant. In the case SiO 2 , only is observed a glow peak centered to 95 degrees C, which is interesting for non-Tl dosimetry of ionizing radiation, which is based in detecting the afterglow response following exposure to radiation. The dose response of SiO 2 :Cu showed a linear behaviour in the interval studied with no saturation evidence until 6.4 kGy, which makes this material suitable and promising for medical, industrial and also space dosimetry applications. (Author)
Sieber, N.; Klabes, R.; Voelskow, M.; Fenske, F.
The behaviour of oxide charges and interface charges in boron implanted and non-implanted SiO 2 -Si structures as well as the electrical activation of the dopants by the action of incoherent light pulses was studied. Depth profiles of electrically active boron ions are presented for different annealing conditions as measured by the pulsed C-V method. It can be concluded that exposure of MOS structures to intense radiation of flash lamps does not increase the fixed charge and the fast state density at the SiO 2 -Si interface if optimal annealing conditions (energy densities) are employed. Low dose boron implanted silicon can be electrically activated without diffusion or segregation of dopants
Asoka-Kumar, P.; Lynn, K.G.; Leung, T.C.; Nielsen, B.; Wu, X.Y.
We describe positron annihilation studies of SiO 2 /Si(100) structures having 100-nm-thick oxide grown by plasma enhanced chemical vapor deposition. A normalized shape parameter is used to characterize the positron annihilation spectra. Activation and passivation of interface states by atomic hydrogen are demonstrated by repeated vacuum anneal and atomic hydrogen exposure. Hydrogen activation energy is derived for one of the samples as 2.02±0.07 eV
Ajioka, T.; Ushio, S.
X-ray photoelectron spectroscopy (XPS) has been applied to characterize the damage introduced into SiO 2 by ion implantation. By measuring the peak width of Si/sub 2p/ from SiO 2 which corresponds to perturbation of the SiO 2 network, good depth profiles of the damage have been obtained for implanted samples and subsequently annealed samples. The results show that the damage distributed more widely than that calculated from energy deposition and that the perturbation of the network is caused not only by radiation damage but also by the existence of impurities in the network. It has been found that the XPS method is effective to understand the atomic structure, and thus, electrical properties of SiO 2
Lee, S.Y.; Nandakumar, V.; Murdock, B.; Hebert, D.
PECVD SiO 2 dielectric has been evaluated as an insulator for a Nb-based, all-refractory Josephson integrated circuit process. First, the properties of PECVD SiO 2 films were measured and compared with those of evaporated SiO films. Second, the PECVD SiO 2 dielectric film was used in our Nb-based Josephson integrated circuit process. The main problem was found to be the deterioration of the critical temperature of the superconducting niobium adjacent to the SiO 2 . The cause and a solution of the problem were investigated. Finally, a Josephson integrated sampler circuit was fabricated and tested. This paper shows acceptable junction I-V characteristics and a measured time resolution of a 4.9 ps pulse in liquid helium
Marel, C. van der; Verheijen, M.A.; Tamminga, Y.; Pijnenburg, R.H.W.; Tombros, N.; Cubaynes, F.
Ultrathin SiO 2 layers are of importance for the semiconductor industry. One of the techniques that can be used to determine the chemical composition and thickness of this type of layers is x-ray photoelectron spectroscopy (XPS). As shown by Seah and Spencer [Surf. Interface Anal. 33, 640 (2002)], it is not trivial to characterize this type of layer by means of XPS in a reliable way. We have investigated a series of ultrathin layers of SiO 2 on Si (in the range from 0.3 to 3 nm) using XPS. The samples were also analyzed by means of transmission electron microscopy (TEM), Rutherford backscattering (RBS), and ellipsometry. The thickness of the SiO 2 layers (d) was determined from the XPS results using three different approaches: the 'standard' equation (Seah and Spencer) for d, an overlayer-substrate model calculation, and the QUASES-Tougaard [Surf. Interface Anal. 26, 249 (1998), QUASES-Tougaard: Software package for Quantitative Analysis of Surfaces by Electron Spectroscopy, version 4.4 (2000); http://www.quases.com] method. Good agreement was obtained between the results of XPS analyses using the 'standard' equation, the overlayer-substrate model calculation, and RBS results. The QUASES-Tougaard results were approximately 62% above the other XPS results. The optical values for the thickness were always slightly higher than the thickness according to XPS or RBS. Using the model calculation, these (relatively small) deviations from the optical results could be explained as being a consequence of surface contaminations with hydrocarbons. For a thickness above 2.5 nm, the TEM results were in good agreement with the results obtained from the other techniques (apart from QUASES-Tougaard). Below 2.5 nm, significant deviations were found between RBS, XPS, and optical data on the one hand and TEM results on the other hand; the deviations became larger as the thickness of the SiO 2 decreased. This effect may be related to interface states of oxygen, which have been
Full Text Available Kyu Hwan Shim,1 John Hulme,1 Eun Ho Maeng,2 Meyoung-Kon Kim,3 Seong Soo A An1 1Department of Bionano Technology, Gachon Medical Research Institute, Gachon University, Sungnam-si, 2Department of Analysis, KTR, Kimpo, Gyeonggi-do, 3Department of Biochemistry and Molecular Biology, Korea University Medical School and College, Seoul, South Korea Abstract: A multitude of nanoparticles, such as titanium oxide (TiO2, zinc oxide, aluminum oxide, gold oxide, silver oxide, iron oxide, and silica oxide, are found in many chemical, cosmetic, pharmaceutical, and electronic products. Recently, SiO2 nanoparticles were shown to have an inert toxicity profile and no association with an irreversible toxicological change in animal models. Hence, exposure to SiO2 nanoparticles is on the increase. SiO2 nanoparticles are routinely used in numerous materials, from strengthening filler for concrete and other construction composites, to nontoxic platforms for biomedical application, such as drug delivery and theragnostics. On the other hand, recent in vitro experiments indicated that SiO2 nanoparticles were cytotoxic. Therefore, we investigated these nanoparticles to identify potentially toxic pathways by analyzing the adsorbed protein corona on the surface of SiO2 nanoparticles in the blood and brain of the rat. Four types of SiO2 nanoparticles were chosen for investigation, and the protein corona of each type was analyzed using liquid chromatography-tandem mass spectrometry technology. In total, 115 and 48 plasma proteins from the rat were identified as being bound to negatively charged 20 nm and 100 nm SiO2 nanoparticles, respectively, and 50 and 36 proteins were found for 20 nm and 100 nm arginine-coated SiO2 nanoparticles, respectively. Higher numbers of proteins were adsorbed onto the 20 nm sized SiO2 nanoparticles than onto the 100 nm sized nanoparticles regardless of charge. When proteins were compared between the two charges, higher numbers of proteins were
Grunthaner, F. J.; Maserjian, J.
Changes in silicon surface preparation prior to thermal oxidation are shown to leave a signature by altering the final SiO2/Si interface structure. Surface analytical techniques, including XPS, static SIMS, ion milling, and newly developed wet-chemical profiling procedures are used to obtain detailed information on the chemical structure of the interface. The oxides are shown to be essentially SiO2 down to a narrow transitional interface layer (3-7 A). A number of discrete chemical species are observed in this interface layer, including different silicon bonds (e.g., C-, OH-, H-) and a range of oxidation states of silicon (0 to +4). The effect of surface preparation and the observed chemical species are correlated with oxide growth rate, surface-state density, and flatband shifts after irradiation.
Sirohi, Sidhharth; Singh, Anandpreet; Dagar, Chakit; Saini, Gajender; Pani, Balaram; Nain, Ratyakshi
In this article, we present a novel fabrication of microporous SiO2/triangular Ag nanoparticles for dye (methylene blue) adsorption and plasmon-mediated degradation. Microporous SiO2 nanoparticles with pore size aminopropyl) trimethoxysilane) to introduce amine groups. Amine-functionalized microporous silica was used for adsorption of triangular silver (Ag) nanoparticles. The synthesized microporous SiO2 nanostructures were investigated for adsorption of different dyes including methylene blue, congo red, direct green 26 and curcumin crystalline. Amine-functionalized microporous SiO2/triangular Ag nanostructures were used for plasmon-mediated photocatalysis of methylene blue. The experimental results revealed that the large surface area of microporous silica facilitated adsorption of dye. Triangular Ag nanoparticles, due to their better charge carrier generation and enhanced surface plasmon resonance, further enhanced the photocatalysis performance.
Zhang, Dongen; Wu, Jinbo; Zhou, Bingpu; Hong, Yaying; Li, Shunbo; Wen, Weijia
by thermogravimetric analysis, X-ray diffraction, standard and high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The C-doped SiO2 displayed outstanding photocatalytic properties, as evidenced by its catalysis of Rhodamine B
Villa S, G.; Mendoza A, D.; Gutierrez W, C.; Perez H, R.
This paper reports a method to synthesize Ag unidirectional structures covered with SiO 2 by sol-gel technique using Au nanoparticles as nucleation centers of the unidirectional structures. In the first phase unidirectional structures of SiO 2 -Ag CI are obtained by sol-gel, using TEOS as a precursor of metallic structures (Ag) and the incorporation of Au nanoparticles as nucleation centers for growth of unidirectional structures. In the second stage, one-way systems are subjected to thermal treatment in H 2 atmosphere for obtain AG 0 particles through mechanisms that diffusion and coalescence of silver to form structures that have a thin cover of SiO 2 . Analysis by scanning electron microscopy, transmission and atomic force microscopy allowed to determine the chemical composition and microstructural properties of unidirectional systems SiO 2 -Ag. (Author)
Akilu, S.; Baheta, A. T.; Sharma, K. V.; Said, M. A.
Nanostructured ceramic materials have recently attracted attention as promising heat transfer fluid additives owing to their outstanding heat storage capacities. In this paper, experimental measurements of the specific heats of SiO2-Glycerol, SiO2-Ethylene Glycol, and SiO2-Glycerol/Ethylene Glycol mixture 60:40 ratio (by mass) nanofluids with different volume concentrations of 1.0-4.0% have been carried out using differential scanning calorimeter at temperatures of 25 °C and 50 °C. Experimental results indicate lower specific heat capacities are found with SiO2 nanofluids compared to their respective base fluids. The specific heat was decreasing with the increase of concentration, and this decrement depends on upon the type of the base fluid. It is observed that temperature has a positive impact on the specific heat capacity. Furthermore, the experimental values were compared with the theoretical model predictions, and a satisfactory agreement was established.
Munirasu, Selvaraj; Nunes, Suzana Pereira
of functionalized nanoparticles in different solvents and immersion in water. The resulting asymmetrically porous morphology and nanoparticle assembly was characterized by scanning electron and atomic force microscopy. The PMMA functionalized SiO2 hybrid material
Tamilselvi, M.; Kamaraj, P.; Arthanareeswari, M.; Devikala, S.; Selvi, J. Arockia
Highlights: • Nano SiO 2 incorporated nano zinc phosphate coating on mild steel was developed. • Coatings showed enhanced corrosion resistance. • The nano SiO 2 is adsorbed on mild steel surface and become nucleation sites. • The nano SiO 2 accelerates the phosphating process. - Abstract: This paper reports the development of nano SiO 2 incorporated nano zinc phosphate coatings on mild steel at low temperature for achieving better corrosion protection. A new formulation of phosphating bath at low temperature with nano SiO 2 was attempted to explore the possibilities of development of nano zinc phosphate coatings on mild steel with improved corrosion resistance. The coatings developed were studied by Scanning Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDX), X-ray Diffraction (XRD), Transmission Electron Microscopy (TEM) and Electrochemical measurements. Significant variation in the coating weight, morphology and corrosion resistance was observed as nano SiO 2 concentrations varied from 0.5–4 g/L. The results showed that, the nano SiO 2 in the phosphating solution changed the initial potential of the interface between mild steel substrate and phosphating solution and reduce the activation energy of the phosphating process, increase the nucleation sites and yielded zinc phosphate coatings of higher coating weight, greater surface coverage and enhanced corrosion resistance. Better corrosion resistance was observed for coatings derived from phosphating bath containing 1.5 g/L nano SiO 2 . The new formulation reported in the present study was free from Ni or Mn salts and had very low concentration of sodium nitrite (0.4 g/L) as accelerator
Nano-TiCl4.SiO2 has been found to be an extremely efficient catalyst for the preparation of 3,4-dihydropyrimidinones/thiones via three-component reactions of an aldehyde, β-ketoester or β-diketone and urea or thiourea under mild conditions. Nano-TiCl4.SiO2 as a solid Lewis acid has been synthesized by reaction of ...
Full Text Available We presented a method to use SiO2/SiNx:H double layer antireflection coatings (DARC on acid textures to fabricate colored multicrystalline silicon (mc-Si solar cells. Firstly, we modeled the perceived colors and short-circuit current density (Jsc as a function of SiNx:H thickness for single layer SiNx:H, and as a function of SiO2 thickness for the case of SiO2/SiNx:H (DARC with fixed SiNx:H (refractive index n=2.1 at 633 nm, and thickness = 80 nm. The simulation results show that it is possible to achieve various colors by adjusting the thickness of SiO2 to avoid significant optical losses. Therefore, we carried out the experiments by using electron beam (e-beam evaporation to deposit a layer of SiO2 over the standard SiNx:H for 156×156 mm2 mc-Si solar cells which were fabricated by a conventional process. Semisphere reflectivity over 300 nm to 1100 nm and I-V measurements were performed for grey yellow, purple, deep blue, and green cells. The efficiency of colored SiO2/SiNx:H DARC cells is comparable to that of standard SiNx:H light blue cells, which shows the potential of colored cells in industrial applications.
Choi, Jaeyoung; Joo, Soyeong; Park, Tae Joo; Kim, Woo-Byoung
Highlights: • Leakage current density of the commercial PECVD grown ∼5 nm SiO_2 layer has been decreased about three orders of magnitude by densification. • The densification of SiO_2 layer is achieved by high oxidation ability of O·. • Densities of suboxide, fixed charge (N_f) and defect state (N_d) in SiO_2/Si interface are decreased by NAOS and PMA. • Tunneling barrier height (Φ_t) is increased because of the increase of atomic density in SiO_2 layer. - Abstract: Low-temperature nitric acid (HNO_3) oxidation of Si (NAOS) has been used to improve the interface and electrical properties of ∼5 nm-thick SiO_2/Si layers produced by plasma-enhanced chemical vapor deposition (PECVD). Investigations of the physical properties and electrical characteristics of these thin films revealed that although their thickness is not changed by NAOS, the leakage current density at a gate bias voltage of −1 V decreases by about two orders of magnitude from 1.868 × 10"−"5 A/cm"2. This leakage current density was further reduced by post-metallization annealing (PMA) at 250 °C for 10 min in a 5 vol.% hydrogen atmosphere, eventually reaching a level (5.2 × 10"−"8 A/cm"2) approximately three orders of magnitude less than the as-grown SiO_2 layer. This improvement is attributed to a decrease in the concentration of suboxide species (Si"1"+, Si"2"+ and Si"3"+) in the SiO_2/Si interface, as well as a decrease in the equilibrium density of defect sites (N_d) and fixed charge density (N_f). The barrier height (Φ_t) generated by a Poole-Frenkel mechanism also increased from 0.205 to 0.371 eV after NAOS and PMA. The decrease in leakage current density is therefore attributed to a densification of the SiO_2 layer in combination with the removal of OH species and increase in interfacial properties at the SiO_2/Si interface.
Full Text Available Use of silicon dioxide (SiO2 and titanium dioxide (TiO2 have been widely investigated individually in coatings technology, but their combined properties promote compatibility for different innovative applications. For example, the photocatalytic properties of TiO2 coatings, when exposed to UV light, have interesting environmental applications, such as air purification, self-cleaning and antibacterial properties. However, as reported in different pilot projects, serious durability problems, associated with the adhesion between the substrate and TiO2, have been evidenced. Thus, the aim of this work is to synthesize SiO2 together with TiO2 to increase the durability of the photocatalytic coating without affecting its photocatalytic potential. Therefore, synthesis using sonochemistry, synthesis without sonochemistry, physical characterization, photocatalytic evaluation, and durability of the SiO2, SiO2@TiO2 and TiO2 coatings are presented. Results indicate that using SiO2 improved the durability of the TiO2 coating without affecting its photocatalytic properties. Thus, this novel SiO2@TiO2 coating shows potential for developing long-lasting, self-cleaning and air-purifying construction materials.
Hillock formation in Al thin films with varying thicknesses of SiO 2 as a passivation layer was investigated during thermal cycling. Based on the stress measurements and the number of hillocks, 250 nm thick SiO 2 was thick enough to suppress the hillock formation and the suppression of hillock at 250 nm passivation and the lack of suppression at thinner passivation is related to the presence/absence of protection against the diffusive flow of atoms from the surrounding area to the surface due to the biaxial compressive stresses present in the film through the weak spots in the passivation layer. The stress state of Al films measured during annealing (the driving force for hillock formation) did not vary much with SiO 2 thickness. A small number of hillocks formed during the plasma enhanced chemical vapor deposition of SiO 2 overlayers at 300 °C. - Highlights: ► We examined the effect of SiO 2 overlayers on hillock formation in Al thin films. ► Thin overlayers were not effective in suppressing diffusive flow to the surface. ► A thick overlayer suppressed the diffusive flow from the interior to the surface. ► The stress state of Al films did not vary much with SiO 2 passivation thickness. ► High mechanical strength provided a large driving force for the large grain growth.
Pinto, Tânia V; Costa, Paula; Sousa, Céu M; Sousa, Carlos A D; Pereira, Clara; Silva, Carla J S M; Pereira, Manuel Fernando R; Coelho, Paulo J; Freire, Cristina
Photochromic silica nanoparticles (SiO 2 @NPT), fabricated through the covalent immobilization of silylated naphthopyrans (NPTs) based on 2H-naphtho[1,2-b]pyran (S1, S2) and 3H-naphtho[2,1-b]pyran (S3, S4) or through the direct adsorption of the parent naphthopyrans (1, 3) onto silica nanoparticles (SiO 2 NPs), were successfully incorporated onto cotton fabrics by a screen-printing process. Two aqueous acrylic- (AC-) and polyurethane- (PU-) based inks were used as dispersing media. All textiles exhibited reversible photochromism under UV and solar irradiation, developing fast responses and intense coloration. The fabrics coated with SiO 2 @S1 and SiO 2 @S2 showed rapid color changes and high contrasts (ΔE* ab = 39-52), despite presenting slower bleaching kinetics (2-3 h to fade to the original color), whereas the textiles coated with SiO 2 @S3 and SiO 2 @S4 exhibited excellent engagement between coloration and decoloration rates (coloration and fading times of 1 and 2 min, respectively; ΔE* ab = 27-53). The PU-based fabrics showed excellent results during the washing fastness tests, whereas the AC-based textiles evidenced good results only when a protective transfer film was applied over the printed design.
Skov Jensen, J.; Franzo, G.; Leervad Petersen, T.P.; Pereira, R.; Chevallier, J.; Christian Petersen, M.; Bech Nielsen, B.; Nylandsted Larsen, A.
Room temperature photoluminescence (PL) at around 600 nm from magnetron-sputtered SiO 2 films co-doped with Ge is reported. The PL signal is observed in pure SiO 2 , however, its intensity increases significantly in the presence of Ge-nanocrystals (Ge-nc). The PL intensity has been optimized by varying the temperature of heat treatment, type of gas during heat treatment, concentration of Ge in the SiO 2 films, and gas pressure during deposition. Maximum intensity occurs when Ge-nc of around 3.5 nm are present in large concentration in SiO 2 layers deposited at fairly high gas pressure. Based on time resolved PL, and PL measurements after α-particle irradiation or H passivation, we attribute the origin of the PL to a defect in SiO 2 (probably an O deficiency) that is excited through an energy transfer from Ge-nc. There is no direct PL from the Ge-nc; however, there is a strong coupling between excitons created in the Ge-nc and the SiO 2 defect
Zhu Tong; Du Chunyu; Liu Chuntao; Yin Geping; Shi Pengfei
This paper describes the preparation of SiO 2 stabilized Pt/C catalyst (SiO 2 /Pt/C) by the hydrolysis of alkoxysilane, and examines the possibility that the SiO 2 /Pt/C is used as a durable cathode catalyst for proton exchange membrane fuel cells (PEMFCs). TEM and XRD results revealed that the hydrolysis of alkoxysilane did not significantly change the morphology and crystalline structure of Pt particles. The SiO 2 /Pt/C catalyst exhibited higher durability than the Pt/C one, due to the facts that the silica layers covered were beneficial for reducing the Pt aggregation and dissolution as well as increasing the corrosion resistance of supports, although the benefit of silica covering was lower than the case of Pt/CNT catalyst. Also, it was observed that the activity of the SiO 2 /Pt/C catalyst for the oxygen reduction reaction was somewhat reduced compared to the Pt/C one after the silica covering. This reduction was partially due to the low oxygen kinetics as revealed by the rotating-disk-electrode measurement. Silica covering by hydrolysis of only 3-aminopropyl trimethoxysilane is able to achieve a good balance between the durability and activity, leading to SiO 2 /Pt/C as a promising cathode catalyst for PEMFCs.
Full Text Available A method of producing large area continuous graphene directly on SiO2 by chemical vapor deposition is systematically developed. Cu thin film catalysts are sputtered onto the SiO2 and pre-patterned. During graphene deposition, high temperature induces evaporation and balling of the Cu, and the graphene “lands onto” SiO2. Due to the high heating and growth rate, continuous graphene is largely completed before the Cu evaporation and balling. 60 nm is identified as the optimal thickness of the Cu for a successful graphene growth and μm-large feature size in the graphene. An all-carbon device is demonstrated based on this technique.
Dong, Yibo; Xie, Yiyang; Xu, Chen; Li, Xuejian; Deng, Jun; Fan, Xing; Pan, Guanzhong; Wang, Qiuhua; Xiong, Fangzhu; Fu, Yafei; Sun, Jie
A method of producing large area continuous graphene directly on SiO2 by chemical vapor deposition is systematically developed. Cu thin film catalysts are sputtered onto the SiO2 and pre-patterned. During graphene deposition, high temperature induces evaporation and balling of the Cu, and the graphene "lands onto" SiO2. Due to the high heating and growth rate, continuous graphene is largely completed before the Cu evaporation and balling. 60 nm is identified as the optimal thickness of the Cu for a successful graphene growth and μm-large feature size in the graphene. An all-carbon device is demonstrated based on this technique.
Vishwakarma, Riteshkumar; Rosmi, Mohamad Saufi; Takahashi, Kazunari; Wakamatsu, Yuji; Yaakob, Yazid; Araby, Mona Ibrahim; Kalita, Golap; Kitazawa, Masashi; Tanemura, Masaki
Low-temperature growth, as well as the transfer free growth on substrates, is the major concern of graphene research for its practical applications. Here we propose a simple method to achieve the transfer free graphene growth on SiO2 covered Si (SiO2/Si) substrate at 250 °C based on a solid-liquid-solid reaction. The key to this approach is the catalyst metal, which is not popular for graphene growth by chemical vapor deposition. A catalyst metal film of 500 nm thick was deposited onto an amorphous C (50 nm thick) coated SiO2/Si substrate. The sample was then annealed at 250 °C under vacuum condition. Raman spectra measured after the removal of the catalyst by chemical etching showed intense G and 2D peaks together with a small D and intense SiO2 related peaks, confirming the transfer free growth of multilayer graphene on SiO2/Si. The domain size of the graphene confirmed by optical microscope and atomic force microscope was about 5 μm in an average. Thus, this approach will open up a new route for transfer free graphene growth at low temperatures.
Kajihara, Koichi; Ikuta, Yoshiaki; Oto, Masanori; Hirano, Masahiro; Skuja, Linards; Hosono, Hideo
Creation and annihilation of point defects were studied for SiO 2 glass exposed to ultraviolet (UV) and vacuum UV (VUV) lights to improve transparency and radiation toughness of SiO 2 glass to UV-VUV laser light. Topologically disordered structure of SiO 2 glass featured by the distribution of Si-O-Si angle is a critical factor degrading transmittance near the fundamental absorption edge. Doping with terminal functional groups enhances the structural relaxation and reduces the number of strained Si-O-Si bonds by breaking up the glass network without creating the color centers. Transmittance and laser toughness of SiO 2 glass for F 2 laser is greatly improved in fluorine-doped SiO 2 glass, often referred as 'modified silica glass'. Interstitial hydrogenous species are mobile and reactive at ambient temperature, and play an important role in photochemical reactions induced by exposure to UV-VUV laser light. They terminate the dangling-bond type color centers, while enhancing the formation of the oxygen vacancies. These findings are utilized to develop a deep-UV optical fiber transmitting ArF laser photons with low radiation damage
Marszałek, Konstanty; Winkowski, Paweł; Jaglarz, Janusz
Investigations of bilayer and trilayer Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings are presented in this paper. The oxide films were deposited on a heated quartz glass by e-gun evaporation in a vacuum of 5 × 10-3 [Pa] in the presence of oxygen. Depositions were performed at three different temperatures of the substrates: 100 °C, 200 °C and 300 °C. The coatings were deposited onto optical quartz glass (Corning HPFS). The thickness and deposition rate were controlled with Inficon XTC/2 thickness measuring system. Deposition rate was equal to 0.6 nm/s for Al2O3, 0.6 nm - 0.8 nm/s for HfO2 and 0.6 nm/s for SiO2. Simulations leading to optimization of the thin film thickness and the experimental results of optical measurements, which were carried out during and after the deposition process, have been presented. The optical thickness values, obtained from the measurements performed during the deposition process were as follows: 78 nm/78 nm for Al2O3/SiO2 and 78 nm/156 nm/78 nm for Al2O3/HfO2/SiO2. The results were then checked by ellipsometric technique. Reflectance of the films depended on the substrate temperature during the deposition process. Starting from 240 nm to the beginning of visible region, the average reflectance of the trilayer system was below 1 % and for the bilayer, minima of the reflectance were equal to 1.6 %, 1.15 % and 0.8 % for deposition temperatures of 100 °C, 200 °C and 300 °C, respectively.
Fujita, Tetsuo; Fukui, Minoru; Okada, Syunji; Shimizu-Iwayama, Tsutomu; Hioki, Tatsumi; Itoh, Noriaki
Aanomalous features of the defects in Si implanted amorphous SiO 2 are reported. The numbers of E 1 prime centers and B 2 centers are found to increase monotonically with implanted Si dose, in contrast to the saturating feature of these numbers in Ar implanted samples. Moreover, when H ions are implanted in amorphous SiO 2 predamaged by Si implantation, both of the density and the number of E 1 prime centers increase and they reach a constant value at a small H dose. We point out that these anomalies can be explained in terms of the difference in the cross-section for defect annihilation in the specimens implanted with Si ions and other ions, in accordance with the homogeneous model proposed by Devine and Golanski. We consider that the main mechanism of defect annihilation is the recombination of an E 1 prime center and an interstitial O, which is stabilized by an implanted Si, reducing the cross-section in Si-implanted specimens. ((orig.))
Bahariqushchi, R.; Gundogdu, Sinan; Aydinli, A.
Multilayers of germanium nanocrystals (NCs) embedded in thin films of silicon nitride matrix separated with SiO2 barriers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). SiGeN/SiO2 alternating bilayers have been grown on quartz and Si substrates followed by post annealing in Ar ambient from 600 to 900 °C. High resolution transmission electron microscopy (HRTEM) as well as Raman spectroscopy show good crystallinity of Ge confined to SiGeN layers in samples annealed at 900 °C. Strong compressive stress for SiGeN/SiO2 structures were observed through Raman spectroscopy. Size, as well as NC-NC distance were controlled along the growth direction for multilayer samples by varying the thickness of bilayers. Visible photoluminescence (PL) at 2.3 and 3.1 eV with NC size dependent intensity is observed and possible origin of PL is discussed.
Tang, Mingyi; Huang, Guanbo; Li, Xianxian; Pang, Xiaobo; Qiu, Haixia
Hydrophilic and biocompatible macromolecules were used to improve and simplify the process for the fabrication of core/shell SiO 2 @Au composite particles. The influence of polymers on the morphology of SiO 2 @Au particles with different size of SiO 2 cores was analyzed by transmission electron microscopy and scanning electron microscopy. The optical property of the SiO 2 @Au particles was studied with UV–Vis spectroscopy. The results indicate that the structure and composition of macromolecules affect the morphology of Au layers on SiO 2 microspheres. The SiO 2 @Au particles prepared in the presence of polyvinyl alcohol (PVA) or polyvinylpyrrolidone (PVP) have thin and complete Au nanoshells owing to their inducing act in preferential growth of Au nanoparticles along the surface of SiO 2 microspheres. SiO 2 @Au particles can be also prepared from SiO 2 microspheres modified with 3-aminopropyltrimethoxysilane in the presence of PVA or PVP. This offers a simple way to fabricate a Au layer on SiO 2 or other microspheres. The SiO 2 @Au particles demonstrated high catalytic activity in the reduction of 4-nitrophenol. - Highlights: • Facile direct deposition method for Au nanoparticles on silica microspheres. • Influence of different types of macromolecule on the formation of Au shell. • High catalytic performance of Au nanoparticles on silica microspheres
Zhu, J.G.; White, C.W.; Budai, J.D.; Withrow, S.P.; Chen, Y.
Nanocrystals of group IV (Si, Ge and SiGe), III-V (GaAs), and II-VI (CdSe) semiconductor materials have been fabricated inside SiO 2 by ion implantation and subsequent thermal annealing. The microstructure of these nanocrystalline semiconductor materials has been studied by transmission electron microscopy (TEM). The nanocrystals form in near-spherical shape with random crystal orientations in amorphous SiO 2 . Extensive studies on the nanocrystal size distributions have been carried out for the Ge nanocrystals by changing the implantation doses and the annealing temperatures. Remarkable roughening of the nanocrystals occurs when the annealing temperature is raised over the melting temperature of the implanted semiconductor material. Strong red photoluminescence peaked around 1.67 eV has been achieved in samples with Si nanocrystals in SiO 2
Full Text Available The annealing behavior of very thin SiO2/Ge multilayers deposited on Si substrate by e-gun deposition in high vacuum was explored. It is shown that, after annealing at moderate temperatures (800°C in inert atmosphere, Ge is completely outdiffused from the SiO2 matrix leaving small (about 3 nm spherical voids embedded in the SiO2 matrix. These voids are very well correlated and formed at distances governed by the preexisting multilayer structure (in vertical direction and self-organization (in horizontal direction. The formed films produce intensive photoluminescence (PL with a peak at 500 nm. The explored dynamics of the PL decay show the existence of a very rapid process similar to the one found at Ge/SiO2 defected interface layers.
Budak, S.; Alim, M. A.; Bhattacharjee, S.; Muntele, C.
Thermoelectric generator devices have been prepared from 200 alternating layers of SiO2/SiO2+Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to formquantum dots and / or quantum clusters in the multi-layer superlattice thin films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient and increase the cross-plane electrical conductivity to increase the figure of merit, ZT. The fabricated devices have been annealed at the different temperatures to tailor the thermoelectric and optical properties of the superlattice thin film systems. While the temperature increased, the Seebeck coefficient continued to increase and reached the maximum value of -25 μV/K at the fluenceof 5x1013 ions/cm2. The decrease in resistivity has been seen between the fluence of 1x1013 ions/cm2 and 5x1013 ions/cm2. Transport properties like Hall coefficient, density and mobility did not change at all fluences. Impedance spectroscopy has been used to characterize the multi-junction thermoelectric devices. The loci obtained in the C*-plane for these data indicate non-Debye type relaxation displaying the presence of the depression parameter.
de Jong, E. M. L. D.; de Boer, W. D. A. M.; Yassievich, I. N.; Gregorkiewicz, T.
Silicon (Si) nanocrystals (NCs) are of great interest for many applications, ranging from photovoltaics to optoelectonics. The photoluminescence quantum yield of Si NCs dispersed in SiO2 is limited, suggesting the existence of very efficient processes of nonradiative recombination, among which the formation of a self-trapped exciton state on the surface of the NC. In order to improve the external quantum efficiency of these systems, the carrier relaxation and recombination need to be understood more thoroughly. For that purpose, we perform transient-induced absorption spectroscopy on Si NCs embedded in a SiO2 matrix over a broad probe range for NCs of average sizes from 2.5 to 5.5 nm. The self-trapping of free excitons on surface-related states is experimentally and theoretically discussed and found to be dependent on the NC size. These results offer more insight into the self-trapped exciton state and are important to increase the optical performance of Si NCs.
Tsong, I.S.T.; Monkowski, M.D.; Monkowski, J.R.; Wintenberg, A.L.; Miller, P.D.; Moak, C.D.
Hydrogen and chlorine depth profiles were obtained on a series of silicon oxides thermally grown in HCl/O 2 and Cl 2 /O 2 ambients at 1100 0 C for 15 minutes using the 19 F nuclear reaction and SIMS techniques. The data show close correlation between the H and Cl profiles in both the HCl/O 2 and Cl 2 /O 2 oxides. While the H and Cl appear to be enriched at the SiO 2 /Si interface of the HCl/O 2 oxides, they are higher in concentration and more evenly distributed in the oxide bulk of the Cl 2 /O 2 oxides
Full Text Available Thermodynamic properties of the liquid Bi2O3-SiO2 solutions were determined from the results of the electrochemical measurements by use of the solid oxide galvanic cells with YSZ (Yttria-Stabilized-Zirconia electrolyte. Activities of Bi2O3 in the solutions were determined for 0.2, 0.3, 0.4, and 0.5 SiO2 mole fractions in the temperature range 1073-1293 K from measured electromotive force (e.m.f of the solid electrolyte galvanic cell: Bi, Bi2O3-SiO2 | YSZ | air (pO2 = 0.213 bar Additionally, heat capacity data obtained for two solid phases 6Bi2O3•SiO2 and 2Bi2O3•3SiO2 were included into optimization of thermodynamic properties of the system. Optimization procedure was supported by differential thermal analysis (DTA data obtained in this work as well as those accepted from the literature. Using the data obtained in this work, and the information about phase equilibria found in the literature, binary system Bi2O3-SiO2 was assessed with the ThermoCalc software.
Prescher, Clemens; Prakapenka, Vitali B; Stefanski, Johannes; Jahn, Sandro; Skinner, Lawrie B; Wang, Yanbin
We investigated the structure of SiO 2 glass up to 172 GPa using high-energy X-ray diffraction. The combination of a multichannel collimator with diamond anvil cells enabled the measurement of structural changes in silica glass with total X-ray diffraction to previously unachievable pressures. We show that SiO 2 first undergoes a change in Si-O coordination number from fourfold to sixfold between 15 and 50 GPa, in agreement with previous investigations. Above 50 GPa, the estimated coordination number continuously increases from 6 to 6.8 at 172 GPa. Si-O bond length shows first an increase due to the fourfold to sixfold coordination change and then a smaller linear decrease up to 172 GPa. We reconcile the changes in relation to the oxygen-packing fraction, showing that oxygen packing decreases at ultrahigh pressures to accommodate the higher than sixfold Si-O coordination. These results give experimental insight into the structural changes of silicate glasses as analogue materials for silicate melts at ultrahigh pressures.
Kalnitsky, A.; Poindexter, E.H.; Caplan, P.J.
Interface traps due to excess Si introduced into the Si-SiO 2 system by ion implantation are investigated. Implanted oxides are shown to have interface traps at or slightly above the Si conduction band edge with densities proportional to the density of off-stoichiometric Si at the Si-SiO 2 interface. Diluted oxygen annealing is shown to result in physical separation of interface traps and equilibrium substrate electrons, demonstrating that ''interface'' states are located within a 0.5 nm thick layer of SiO 2 . Possible charge trapping mechanisms are discussed and the effect of these traps on MOS transistor characteristics is described using a sheet charge model. (author)
Chhikara, Manisha; Pavlica, Egon; Matković, Aleksandar; Gajić, Radoš; Bratina, Gvido
Atomic force microscopy has been used to examine early stages of pentacene growth on exfoliated single-layer graphene transferred to SiO2 substrates. We have observed 2D growth with mean height of 1.5 ± 0.2 nm on as-transferred graphene. Three-dimensional islands of pentacene with an average height of 11 ± 2 nm were observed on graphene that was annealed at 350 °C prior to pentacene growth. Compellingly similar 3D morphology has been observed on graphene transferred onto SiO2 that was treated with hexamethyldisilazane prior to the transfer of graphene. On multilayer graphene we have observed 2D growth, regardless of the treatment of SiO2. We interpret this behavior of pentacene molecules in terms of the influence of the dipolar field that emerges from the water monolayer at the graphene/SiO2 interface on the surface energy of graphene.
Shen, Guozhu; Fang, Xumin; Wu, Hongyan; Wei, Hongyu; Li, Jingfa; Li, Kaipeng; Mei, Buqing; Xu, Yewen
A facile method has been developed to fabricate magnetic core/shell SiO2/C/Co sub-microspheres via the pyrolysis of SiO2/PANI (polyaniline) and electroless plating method. The electromagnetic parameters of these SiO2/C and SiO2/C/Co composites were measured and the microwave reflection loss properties were evaluated in the frequency range of 2-18 GHz. The results show that the dielectric loss of SiO2/C composite increases with the increase of carbonization temperature and the magnetic loss enhances due to the deposition of cobalt on the SiO2/C sub-microspheres. The reflection loss results exhibit that the microwave absorption properties of the SiO2/C/Co composites are more excellent than those of SiO2/C composites for each thickness. The maximum effective absorption bandwidth (reflection loss ≤ -10 dB) arrives at 5.0 GHz (13.0-18 GHz) for SiO2/C/Co composite with 1.5 mm of thickness and the minimum reflection loss value is -24.0 dB at 5.0 GHz with 4.0 mm of thickness. The microwave loss mechanism of the SiO2/C/Co composites was also discussed in this paper.
Chao, Jie; Lv, Yan; Chen, Jin; Wang, Jing; Yao, Honghong
The inhalation of silicon dioxide (SiO 2 ) particles causes silicosis, a stubborn pulmonary disease that is characterized by alveolar inflammation during the early stage. Soluble cytokine receptors (SCRs) play important roles in regulating inflammation by either attenuating or promoting cytokine signaling. However, the role of SCRs in silicosis remains unknown. Luminex assays revealed increased soluble vascular endothelial growth factor receptor (sVEGFR) family levels in the plasma of silicosis patients. In an enzyme-linked immunosorbent assay (ELISA), cells from the differentiated human monocytic cell line U937 released sVEGFR family proteins after exposure to SiO 2 (50μg/cm 2 ). Further Western blot experiments revealed that VEGFR expression was also elevated in U937 cells. In contrast, levels of sVEGFR family members did not change in the supernatants of human umbilical vein endothelial cells (HUVECs) after exposure to SiO 2 (50μg/cm 2 ). Interestingly, VEGFR expression in HUVECs decreased after SiO 2 treatment. In a scratch assay, HUVECs exhibited cell migration ability, indicating the acquisition of mesenchymal properties. Our findings highlight the important role of sVEGFRs in both inflammation and fibrosis induced by SiO 2 , suggesting a possible mechanism for the fibrogenic effects observed in pulmonary diseases associated with fibrosis. Copyright © 2017 Elsevier B.V. All rights reserved.
Tseng, Kuang-Hung; Chen, Kuan-Lung
This study investigates the effects of flux compounds on the weld shape, ferrite content, and hardness profile in the tungsten inert gas (TIG) welding of 6 mm-thick austenitic 316 L stainless steel plates, using TiO2 and SiO2 powders as the activated fluxes. The metallurgical characterizations of weld metal produced with the oxide powders were evaluated using ferritoscope, optical microscopy, and Vickers microhardness test. Under the same welding parameters, the penetration capability of TIG welding with TiO2 and SiO2 fluxes was approximately 240% and 292%, respectively. A plasma column made with SiO2 flux exhibited greater constriction than that made with TiO2 flux. In addition, an anode root made with SiO2 flux exhibited more condensation than that made with TiO2 flux. Results indicate that energy density of SiO2-flux assisted TIG welding is higher than that of TiO2-flux assisted TIG welding.
Spataru, Nicolae; Anastasescu, Crina; Radu, Mihai Marian; Balint, Ioan; Negrila, Catalin; Spataru, Tanta; Fujishima, Akira
Highly defected SiO2 nanotubes (SiO2-NT) were obtained by a simple sol-gel procedure followed by calcination. Boron-doped diamond (BDD) polycrystalline films coated with SiO2-NT were used as working electrodes and, unexpectedly, cyclic voltammetric experiments have shown that the concentration of both positive and negative defects at the surface is high enough to enable redox processes involving positively charged Ru(bpy)32+/3+ to occur. Conversely, no electrochemical activity was put into evidence for Fe(CN)63-/4- species, most likely as a result of the strong electrostatic repulsion exerted by the negatively charged SiO2 surface. The concentration of surface defects was further increased by a subsequent thermal treatment in a hydrogen atmosphere which, as EIS measurements have shown, significantly promotes Ru(bpy)32+ anodic oxidation. Digital simulation of the voltammetric responses demonstrated that this treatment does not lead to a similar increase of the number of electron-donor sites. It was also found that methanol anodic oxidation at hydrogenated SiO2-NT-supported platinum results in Tafel slopes of 116-220 mV decade-1, comparable to those reported for both conventional PtRu and Pt-oxide catalysts.
Full Text Available Structural properties and chemical composition change the photocatalytic activity in TiO2-SiO2 nanopowder composite. The SiO2-TiO2 nanostructure is synthesized based on sol–gel method. The nanoparticles are characterized by x-ray fluorescents (XRF, x- ray diffraction (XRD, tunneling electron microscopy (TEM, field emission scanning electron microscopy (FE-SEM, UV-vis. Spectrophotometer and furrier transmission create infrared absorption (FTIR techniques. The rate constant k for the degradation of methylen blue in its aqueous solution under UV irradiation is determined as a measure of photocatalytic activity. Dependence between photocatalytic activity and SiO2 content in the composite is determined. Rate constant k is found dependent on the content of SiO2 in the composite that calcined at 900 oC. The addition of low composition SiO2 to the TiO2 matrix (lower than 45% enhances the photocatalytic activity due to thermal stability and increasing in the surface area. The effects of chemical compositions on the surface topography and the crystallization of phases are studied.
Full Text Available Abstract Optical integration is essential for practical application, but it remains unexplored for nanoscale devices. A newly designed nanocomposite based on ZnO semiconductor nanowires and Tb(OH3/SiO2 core/shell nanospheres has been synthesized and studied. The unique sea urchin-type morphology, bright and sharply visible emission bands of lanthanide, and large aspect ratio of ZnO crystalline nanotips make this novel composite an excellent signal receiver, waveguide, and emitter. The multifunctional composite of ZnO nanotips and Tb(OH3/SiO2 nanoparticles therefore can serve as an integrated nanophotonics hub. Moreover, the composite of ZnO nanotips deposited on a Tb(OH3/SiO2 photonic crystal can act as a directional light fountain, in which the confined radiation from Tb ions inside the photonic crystal can be well guided and escape through the ZnO nanotips. Therefore, the output emission arising from Tb ions is truly directional, and its intensity can be greatly enhanced. With highly enhanced lasing emissions in ZnO-Tb(OH3/SiO2 as well as SnO2-Tb(OH3/SiO2 nanocomposites, we demonstrate that our approach is extremely beneficial for the creation of low threshold and high-power nanolaser.
Leung, T. C.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K. G.
Studies of SiO2-Si and metal-oxide-semiconductor (MOS) structures using positrons are summarized and a concise picture of the present understanding of positrons in these systems is provided. Positron annihilation line-shape S data are presented as a function of the positron incident energy, gate voltage, and annealing, and are described with a diffusion-annihilation equation for positrons. The data are compared with electrical measurements. Distinct annihilation characteristics were observed at the SiO2-Si interface and have been studied as a function of bias voltage and annealing conditions. The shift of the centroid (peak) of γ-ray energy distributions in the depletion region of the MOS structures was studied as a function of positron energy and gate voltage, and the shifts are explained by the corresponding variations in the strength of the electric field and thickness of the depletion layer. The potential role of the positron annihilation technique as a noncontact, nondestructive, and depth-sensitive characterization tool for the technologically important, deeply buried interface is shown.
Leung, T.C.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K.G.
Studies of SiO 2 -Si and metal-oxide-semiconductor (MOS) structures using positrons are summarized and a concise picture of the present understanding of positrons in these systems is provided. Positron annihilation line-shape S data are presented as a function of the positron incident energy, gate voltage, and annealing, and are described with a diffusion-annihilation equation for positrons. The data are compared with electrical measurements. Distinct annihilation characteristics were observed at the SiO 2 -Si interface and have been studied as a function of bias voltage and annealing conditions. The shift of the centroid (peak) of γ-ray energy distributions in the depletion region of the MOS structures was studied as a function of positron energy and gate voltage, and the shifts are explained by the corresponding variations in the strength of the electric field and thickness of the depletion layer. The potential role of the positron annihilation technique as a noncontact, nondestructive, and depth-sensitive characterization tool for the technologically important, deeply buried interface is shown
Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.
Zhang, Y.; Mi, W. B.; Zhang, Xixiang
Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.
Yang Zhengwen; Yan Dong; Song Zhiguo; Zhou Dacheng; Yu Xue; Yang Yong; Yin Zhaoyi; Yan Lei; Wang Rongfei; Wu Hangjun; Qiu Jianbei
The SiO 2 : Tb, Yb inverse opals with photonic band gap at 465 or 543 nm were prepared, and an effect of photonic band gap on upconversion spontaneous emission from Tb 3+ was investigated. The results show that the photonic band gap has a significant influence on the upconversion emission of the SiO 2 : Tb, Yb inverse opals. The upconversion luminescence of the Tb 3+ ions is suppressed in the inverse opal compared with the luminescence of that of the reference sample. - Highlights: ► Upconversion emission from Tb 3+ was observed in the SiO 2 : Tb, Yb inverse opal. ► UC emission of Tb 3+ was modulated by controlling the structure of inverse opal. ► UC emission of Tb 3+ was depressed in the inverse opal.
Pham, Tuan. H.; Dang, Cu. X.
Silicon dioxide, SiO2, is one of the preferred low index materials for optical thin film technology. It is often deposited by electron beam evaporation source with less porosity and scattering, relatively durable and can have a good laser damage threshold. Beside these advantages the deposition of critical optical thin film stacks with silicon dioxide from an E-gun was severely limited by the stability of the evaporation pattern or angular distribution of the material. The even surface of SiO2 granules in crucible will tend to develop into groove and become deeper with the evaporation process. As the results, angular distribution of the evaporation vapor changes in non-predicted manner. This report presents our experiments to apply Ion Assisted Deposition process to evaporate silicon in a molten liquid form. By choosing appropriate process parameters we can get SiO2 film with good and stable property.
Hsu, Cheng-Chih; Lan, Wen-Lin; Chen, Nien-Po; Wu, Chyan-Chyi
This paper demonstrates the antireflection coating of SiO2 nanospheres applied to cover glass by using the optimal spin-coating method. Because of the hydrolysis and condensation reactions between the SiO2 nanosphere antireflection (AR) coating and n-octadecyltriethoxysilane solution (C18-TEOS), the contact angle of the AR coating with hydrophobic treatment is improved approximately 38%, and the moisture-resistance remains unchanged, which preserved similar transmittance for six weeks. Furthermore, the AR coating with hydrophobic treatment exhibits approximately 3% and 7% improvement in the transmittance at normal and oblique incidence, respectively. The hydrophobic and omnidirectional AR coating with nanoscale SiO2 particles can be fabricated using the proposed simple and economical method.
Boies, Adam M; Girshick, Steven L; Roberts, Jeffrey T; Zhang Bin; Nakamura, Toshitaka; Mochizuki, Amane
Gas-phase silver nanoparticles were coated with silicon dioxide (SiO 2 ) by photoinduced chemical vapor deposition (photo-CVD). Silver nanoparticles, produced by inert gas condensation, and a SiO 2 precursor, tetraethylorthosilicate (TEOS), were exposed to vacuum ultraviolet (VUV) radiation at atmospheric pressure and varying temperatures. The VUV photons dissociate the TEOS precursor, initiating a chemical reaction that forms SiO 2 coatings on the particle surfaces. Coating thicknesses were measured for a variety of operation parameters using tandem differential mobility analysis and transmission electron microscopy. The chemical composition of the particle coatings was analyzed using energy dispersive x-ray spectrometry and Fourier transform infrared spectroscopy. The highest purity films were produced at 300-400 0 C with low flow rates of additional oxygen. The photo-CVD coating technique was shown to effectively coat nanoparticles and limit core particle agglomeration at concentrations up to 10 7 particles cm -3 .
Tokushige, M.; Tsujimura, H.; Nishikiori, T.; Ito, Y.
Silicon nanoparticles are formed from SiO 2 particles by conducting plasma-induced cathodic discharge electrolysis. In a LiCl–KCl melt in which SiO 2 particles were suspended at 450 °C, we obtained Si nanoparticles with diameters around 20 nm. During the electrolysis period, SiO 2 particles are directly reduced by discharge electrons on the surface of the melt just under the discharge, and the deposited Si atom clusters form Si nanoparticles, which leave the surface of the original SiO 2 particle due to free spaces caused by a molar volume difference between SiO 2 and Si. We also found that SiC nanoparticles can be obtained using carbon anode. Based on Faraday's law, the current efficiency for the formation of Si nanoparticles is 70%
Ma Xiaojun; Gao Dangzhong; Meng Jie
The measuring method based on vertical scanning interference and combined with the relation between refraction index and density of SiO_2 foam shells is introduced, and the relation is analyzed according to formulas of Lorentz-Lorenz and Gladstone-Dale. The experimental result and measuring uncertainty evaluation indicate that the precision measurement of density of low density SiO_2 foam shells can be realized by using the vertical scanning interference technique and combining with Gladstone and Dale analysis method, and the measuring uncertainty is about 5%. (authors)
Mogensen, Jeppe; Jørgensen, Poul-Erik; Thomsen, Trine Rolighed
. From this perspective, the purpose of this paper is therefore to address focus on alternative passive coatings that without actively killing the bacteria provide a hydrophobic and easy-to-clean textile surface. The paper relates to an in-situ study evaluating the effect and cleaning potential of SiO2...... contact plates through a three-week period. By determining the level of contamination on these surfaces, the study illustrates that the SiO2-coated textile is possible to clean to an acceptable level below the critical limit value of 2,5 Colony Forming Units (CFU) per cm2. In comparison, the traditional...
Kluth, P.; Johannessen, B.; Giraud, V.; Cheung, A.; Glover, C.J.; Azevedo, G. de M; Foran, G.J.; Ridgway, M.C.
Au nanocrystals (NCs) fabricated by ion implantation into thin SiO 2 and annealing were investigated by means of extended x-ray absorption fine structure (EXAFS) spectroscopy and transmission electron microscopy. A bond length contraction was observed and can be explained by surface tension effects in a simple liquid-drop model. Such results are consistent with previous reports on nonembedded NCs implying a negligible influence of the SiO 2 matrix. Cumulant analysis of the EXAFS data suggests surface reconstruction or relaxation involving a further shortened bond length. A deviation from the octahedral closed shell structure is apparent for NCs of size 25 A
Maekawa, M.; Kawasuso, A.; Yoshikawa, M.; Itoh, H.
We have studied positron annihilation in a Silicon carbide (SiC)-metal/oxide/semiconductor (MOS) structure using a monoenergetic positron beam. The Doppler broadening of annihilation quanta were measured as functions of the incident positron energy and the gate bias. Applying negative gate bias, significant increases in S-parameters were observed. This indicates the migration of implanted positrons towards SiO 2/SiC interface and annihilation at open-volume type defects. The behavior of S-parameters depending on the bias voltage was well correlated with the capacitance-voltage ( C- V) characteristics. We observed higher S-parameters and the interfacial trap density in MOS structures fabricated using the dry oxidation method as compared to those by pyrogenic oxidation method.
Maekawa, M.; Kawasuso, A.; Yoshikawa, M.; Itoh, H.
We have studied positron annihilation in a Silicon carbide (SiC)-metal/oxide/semiconductor (MOS) structure using a monoenergetic positron beam. The Doppler broadening of annihilation quanta were measured as functions of the incident positron energy and the gate bias. Applying negative gate bias, significant increases in S-parameters were observed. This indicates the migration of implanted positrons towards SiO 2 /SiC interface and annihilation at open-volume type defects. The behavior of S-parameters depending on the bias voltage was well correlated with the capacitance-voltage (C-V) characteristics. We observed higher S-parameters and the interfacial trap density in MOS structures fabricated using the dry oxidation method as compared to those by pyrogenic oxidation method
Maekawa, M.; Kawasuso, A.; Yoshikawa, M.; Miyashita, A.; Suzuki, R.; Ohdaira, T.
The structure of the SiO 2 -4ph-SiC interface layer produced by dry oxidation has been studied by positron annihilation spectroscopy using slow positron beams. From Doppler broadening measurements, the interface layer was clearly distinguished from the SiO 2 and SiC layers and was observed to be defective. At the interface layer, a single long positron lifetime of 451 ps, which is close to the second lifetime in the SiO 2 layer, was obtained, thus suggesting that the structure of the interface layer resembles an amorphous SiO 2 network. A comparison was made between the obtained electron momentum distribution at the interface layer and the theoretical calculation. It was found that positrons annihilate with oxygen valence electrons. By annealing after the oxidation, the annihilation probability of the positrons with oxygen valence electrons and the number of interface traps decreased in the same temperature range, thus suggesting a correlation between interface traps and positron annihilation sites
Jia, Yanrong; Zhang, Yun; Zhou, Qiubao; Fan, Qinguo; Shao, Jianzhong
The SiO 2 /polyethyleneimine (PEI) films with structural colors on poly(ethylene terephthalate) (PET) substrates were fabricated by an electrostatic self-assembly method. The morphology of the films was characterized by Scanning Electron Microscopy. The results showed that there was no distinguishable multilayered structure found of SiO 2 /PEI films. The optical behaviors of the films were investigated through the color photos captured by a digital camera and the color measurement by a multi-angle spectrophotometer. Different hue and brightness were observed at various viewing angles. The structural colors were dependent on the SiO 2 particle size and the number of assembly cycles. The mechanism of the structural colors generated from the assembled films was elucidated. The morphological structures and the optical properties proved that the SiO 2 /PEI film fabricated on PET substrate formed a homogeneous inorganic/organic SiO 2 /PEI composite layer, and the structural colors were originated from single thin film interference. - Highlights: • SiO 2 /PEI thin films were electrostatic self-assembled on PET substrates. • The surface morphology and optical behavior of the film were investigated. • The structural colors varied with various SiO 2 particle sizes and assembly cycles. • Different hue and lightness of SiO 2 /PEI film were observed at various viewing angles. • Structural color of the SiO 2 /PEI film originated from single thin film interference
Alekseeva, Z.D.; Mazurin, O.V.; Aver'yanov, V.I.; Galakhov, F.Ya.
The liquation region in the system Na 2 O-B 2 O 3 -SiO 2 was investigated. The liquation temperatures were determined by the boundary of disappearance of opalescence in specimens with pre-induced opalescence. Extrapolation of the concentration dependences of the liquation temperature along sections with a constant SiO 2 content to a point indicates that with a SiO 2 content of 20-40% the liquation boundary in the system B 2 O 3 -SiO 2 hardly lies above 450 deg C
Kachurin, G.A.; Cherkova, S.G.; Volodin, V.A.; Kesler, V.G.; Gutakovsky, A.K.; Cherkov, A.G.; Bublikov, A.V.; Tetelbaum, D.I.
The effect of 10 13 -10 16 cm -2 P ions implantation and of subsequent annealing on Si nanocrystals (Si-ncs), formed preliminarily in SiO 2 layers by the ion-beam synthesis, has been studied. Photoluminescence (PL), Raman spectroscopy, high resolution electron microscopy (HREM), X-Ray Photoelectron Spectroscopy (XPS) and optical absorption were used for characterizations. The low fluence implantations have shown even individual displacements in Si-ncs quench their PL. Restoration of PL from partly damaged Si-ncs proceeds at annealing less than 1000 deg. C. In the low fluence implanted and annealed samples an increased Si-ncs PL has been found and ascribed to the radiation-induced shock crystallization of stressed Si nanoprecipitates. Annealing at temperatures under 1000 deg. C are inefficient when P ion fluences exceed 10 14 cm -2 , thus becoming capable to amorphize Si-ncs. High crystallization temperature of the amorphized Si-ncs is attributed to a counteraction of their shell layers. After implantation of the highest P fluences an enhanced recovery of PL was found from P concentration over 0.1 at.%. Raman spectroscopy and HREM showed an increased Si-ncs number in such layers. The effect resembles the impurity-enhanced crystallization, known for heavily doped bulk Si. This effect, along with the data obtained by XPS, is considered as an indication P atoms are really present inside the Si-ncs. However, no evidence of free electrons appearance has been observed. The fact is explained by an increased interaction of electrons with the donor nuclei in Si-ncs
Chain, C.Y.; Damonte, L.C.; Ferrari, S.; Munoz, E.; Torres, C. Rodriguez; Pasquevich, A.F.
A high-k HfO 2 /SiO 2 gate stack is taking the place of SiO 2 as a gate dielectric in field effect transistors. This fact makes the study of the solid-state reaction between these oxides very important. Nanostructure characterization of a high-energy ball milled and post-annealed equimolar HfO 2 and amorphous SiO 2 powder mixture has been carried out by perturbed angular correlations (PAC) technique. The study was complemented with X-ray diffraction and positron annihilation lifetime spectroscopy (PALS). The experimental results revealed that the ball milling of equimolar mixtures increases the defects concentration in hafnium oxide. No solid-state reaction occurred even after 8 h of milling. The formation of HfSiO 4 (hafnon) was observed in the milled blends annealed at high temperatures.The PAC results of the milled samples are compared with those obtained for pure m-ZrO 2 subjected to high-energy ball milling and with reported microstructure data for the system ZrO 2 -SiO 2 .
Petitgirard, Sylvain; Malfait, Wim J.; Journaux, Baptiste
and present Earth. SiO2 is the main constituent of Earth's mantle and is the reference model system for the behavior of silicate melts at high pressure. Here, we apply our recently developed x-ray absorption technique to the density of SiO2 glass up to 110 GPa, doubling the pressure range...... for such measurements. Our density data validate recent molecular dynamics simulations and are in good agreement with previous experimental studies conducted at lower pressure. Silica glass rapidly densifies up to 40 GPa, but the density trend then flattens to become asymptotic to the density of SiO2 minerals above 60...... GPa. The density data present two discontinuities at similar to 17 and similar to 60 GPa that can be related to a silicon coordination increase from 4 to a mixed 5/6 coordination and from 5/6 to sixfold, respectively. SiO2 glass becomes denser than MgSiO3 glass at similar to 40 GPa, and its density...
Full Text Available Cobalt ferrite (CoFe2O4 and silica (SiO2 nanopowders have been prepared by the microwave hydrothermal (M-H method using metal nitrates as precursors of CoFe2O4 and tetraethyl orthosilicate as a precursor of SiO2. The synthesized powders were characterized by XRD and FESEM. The (100-x (CoFe2O4 + xSiO2 (where x = 0%, 10%, 20%, and 30% composites with different weight percentages have been prepared using ball mill method. The composite samples were sintered at 800°C/60 min using the microwave sintering method and then their structural and morphological studies were investigated using X-ray diffraction (XRD, Fourier transformation infrared (FTIR spectra, and scanning electron microscopy (SEM, respectively. The effect of SiO2 content on the magnetic and electrical properties of CoFe2O4/SiO2 nanocomposites has been studied via the magnetic hysteresis loops, complex permeability, permittivity spectra, and DC resistivity measurements. The synthesized nanocomposites with adjustable grain sizes and controllable magnetic properties make the applicability of cobalt ferrite even more versatile.
Liu Yang; Liao Fuhui; Li Junran; Zhang Shaohua; Chen Shumei; Wei Chenguan; Gao Song
Electrorheological (ER) materials of pure SiO 2 and SiO 2 doped with rare earths (RE = Ce, Gd, Y) (non-metallic glasses (silicates)) were prepared using Na 2 SiO 3 and RECl 3 as starting materials. The electrorheological properties are not enhanced by all rare earth additions. The material doped with Ce exhibits the best ER performance
Bootkul, D.; Intarasiri, S.; Aramwit, C.; Tippawan, U.; Yu, L.D.
Diamond-like carbon (DLC) films deposited on SiO 2 /Si substrate are attractive for novel sensitive and selective chemical sensors. According to the almost never ending of size reduction, a nm-thickness layer of the film is greatly required. However, formation of such a very thin DLC film on SiO 2 /Si substrate is challenging. In this experiment, DLC films were formed using our in-house Filtered Cathodic Vacuum Arc Deposition (FCVAD) facility by varying the bias voltage of 0 V, −250 V and −450 V with the arc voltage of 350 V, 450 V, 550 V, 650 V and 750 V for 10 min. Raman spectroscopy was applied for characterization of the film qualities and Transmission Electron Microscopy (TEM) was applied for cross sectional analysis. Results showed that films of thickness ranging from 10–50 nm were easily acquired depending on deposition conditions. Deconvolution of Raman spectra of these samples revealed that, when fixing the substrate bias but increasing the arc voltage from 350 to 750 V, the ratio between D-peak and G-peak intensity, namely I D /I G ratio, tended to reduce up to the arc voltage of 450 V, then increased up to the arc voltage of 650 V and finally decreased again. On the other hand, when fixing the arc voltage, the I D /I G ratio tended to decrease continuously as the increasing of bias voltage. It can be concluded that the bonding structure would evolve from a graphitic-like structure to a diamond-like structure as the substrate bias increases. Additionally, the sp 3 site should be maximized at the arc voltage ∼450 V for fixed bias voltage. It is expected that, at −450 V bias and 450 V arc, sp 3 fractions could be higher than 60%. However, in some cases, e.g. at low arc voltages, voids formed between the film and the amorphous SiO 2 substrate. Electron energy loss spectroscopy (EELS) of the C edge across the DLC indicated that the thicker DLC film had uniform chemistry and structure, whereas the thin DLC film showed changes in the edge shape
Abe, T.; Yamada-Kaneta, H.
Diffusion behavior of oxygen at (near) the Si/SiO 2 interface was investigated. We first oxidized the floating-zone-grown silicon substrates, and then annealed the SiO 2 -covered substrates in an argon ambient. We examined two different conditions for oxidation: wet and dry oxidation. By the secondary-ion-mass spectrometry, we measured the depth profiles of the oxygen in-diffusion of these heat-treated silicon substrates: We found that the energy of dissolution (in-diffusion) of an oxygen atom that dominates the oxygen concentration at the Si/SiO 2 interface depends on the oxidation condition: 2.0 and 1.7 eV for wet and dry oxidation, respectively. We also found that the barrier heights for the oxygen diffusion in argon anneal were significantly different for different ambients adopted for the SiO 2 formation: 3.3 and 1.8 eV for wet and dry oxidation, respectively. These findings suggest that the microscopic behavior of the oxygen atoms at the Si/SiO 2 interface during the argon anneal depends on the ambient adopted for the SiO 2 formation
Khriachtchev, Leonid; Räsänen, Markku; Novikov, Sergei
We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar+ laser radiation melts Si nanocrystals in a free-standing Si /SiO2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means.
Schulze, D.; Finster, J.
SiO 2 surface layers of 160 nm thickness formed by 16 O + ion implantation into silicon are examined by X-ray photoelectron spectroscopy measurements into the depth after a step-by-step chemical etching. The chemical nature and the thickness of the transition layer were determined. The results of the XPS measurements show that the outer surface and the bulk of the layers formed by oxygen implantation and subsequent high temperature annealing consist of SiO 2 . There is no evidence for Si or SiO/sub x/ (0 2 and Si is similar to that of thin grown oxide layers. Only its thickness is somewhat larger than in thermal oxide
Bau, Jeremy A.
Semiconductor systems for photocatalytic overall water splitting into H2 and O2 gases typically require metal cocatalyst particles, such as Pt, to efficiently catalyze H2 evolution. However, such metal catalyst surfaces also serve as recombination sites for H2 and O2, forming H2O. We herein report the photon-induced fabrication of microporous SiO2 membranes that can selectively restrict passage of O2 and larger hydrated ions while allowing penetration of protons, water, and H2. The SiO2 layers were selectively photodeposited on Pt nanoparticles on SrTiO3 photocatalyst by using tetramethylammonium (TMA) as a structure-directing agent (SDA), resulting in the formation of core–shell Pt@SiO2 cocatalysts. The resulting photocatalyst exhibited both improved overall water splitting performance under irradiation and with no H2/O2 recombination in the dark. The function of the SiO2 layers was investigated electrochemically by fabricating the SiO2 layers on a Pt electrode via an analogous cathodic deposition protocol. The uniform, dense, yet amorphous layers possess microporosity originating from ring structures formed during the hydrolysis of the silicate precursor in the presence of TMA, suggesting a double-role for TMA in coordinating silicate to cathodic surfaces and in creating a microporous material. The resulting layers were able to function as a molecular sieve, allowing for exclusive H2 generation while excluding unwanted side reactions by O2 or ferricyanide. The SiO2 layer is stable for extended periods of time in photocatalytic conditions, demonstrating promise as a nontoxic material for selective H2 evolution.
Bau, Jeremy A.; Takanabe, Kazuhiro
Semiconductor systems for photocatalytic overall water splitting into H2 and O2 gases typically require metal cocatalyst particles, such as Pt, to efficiently catalyze H2 evolution. However, such metal catalyst surfaces also serve as recombination sites for H2 and O2, forming H2O. We herein report the photon-induced fabrication of microporous SiO2 membranes that can selectively restrict passage of O2 and larger hydrated ions while allowing penetration of protons, water, and H2. The SiO2 layers were selectively photodeposited on Pt nanoparticles on SrTiO3 photocatalyst by using tetramethylammonium (TMA) as a structure-directing agent (SDA), resulting in the formation of core–shell Pt@SiO2 cocatalysts. The resulting photocatalyst exhibited both improved overall water splitting performance under irradiation and with no H2/O2 recombination in the dark. The function of the SiO2 layers was investigated electrochemically by fabricating the SiO2 layers on a Pt electrode via an analogous cathodic deposition protocol. The uniform, dense, yet amorphous layers possess microporosity originating from ring structures formed during the hydrolysis of the silicate precursor in the presence of TMA, suggesting a double-role for TMA in coordinating silicate to cathodic surfaces and in creating a microporous material. The resulting layers were able to function as a molecular sieve, allowing for exclusive H2 generation while excluding unwanted side reactions by O2 or ferricyanide. The SiO2 layer is stable for extended periods of time in photocatalytic conditions, demonstrating promise as a nontoxic material for selective H2 evolution.
Mohammad W. Kadi
Full Text Available ZrO2-SiO2 mixed oxides were prepared via the sol-gel method. Photo-assisted deposition was utilized for doping the prepared mixed oxide with 0.1, 0.2, 0.3, and 0.4 wt% of Pt. XRD spectra showed that doping did not result in the incorporation of Pt within the crystal structure of the material. UV-reflectance spectrometry showed that the band gap of ZrO2-SiO2 decreased from 3.04 eV to 2.48 eV with 0.4 wt% Pt doping. The results show a specific surface area increase of 20%. Enhanced photocatalysis of Pt/ZrO2-SiO2 was successfully tested on photo degradation of cyanide under illumination of visible light. 100% conversion was achieved within 20 min with 0.3 wt% of Pt doped ZrO2-SiO2.
Reijnders, L.; Kahn, H.A.; Arif, I.A.
TiO2 and amorphous SiO2 nanoparticles have been described as ‘safe’, ‘non-toxic’ and ‘environment friendly’ in scientific literature. However, though toxicity data are far from complete, there is evidence that these nanoparticles are hazardous. TiO2 nanoparticles have been found hazardous to humans
Leervad Pedersen, T.P.; Skov Jensen, J.; Chevallier, J.
The synthesis of evenly distributed Ge nanoclusters in plasma-enhanced chemical-vapour-deposited (PE-CVD) SiO2 thin films containing 8 at. % Ge is reported. This is of importance for the application of nanoclusters in semiconductor technology. The average diameter of the Ge nanoclusters can...
Paušová, Š.; Krýsa, J.; Jirkovský, Jaromír; Prevot, V.; Mailhot, G.
Roč. 89, č. 8 (2014), s. 1129-1135 ISSN 0268-2575 Institutional support: RVO:61388955 Keywords : photocatalysis * TiO2/SiO2 * composite Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.349, year: 2014
Kulazynski, M.; van Ommen, J.G.; Trawczynski, J.; Walendziewski, J.
Combustion of trichloroethylene (TCE) on Cr2O3, V2O5, Pt or Pd catalysts supported on TiO2-SiO2 as a carrier has been investigated. It was found that oxide catalysts are very active but their activity quickly diminishes due to loss of the active component, especially at higher reaction temperatures
Li, Na; Zhou, Qun; Tian, Shu; Zhao, Hong; Li, Xiaowei; Adkins, Jason; Gu, Zhuomin; Zhao, Lili; Zheng, Junwei
In the present work, we report a new and simple approach for preparing a highly ordered Au (1 1 1) nanoparticle (NP) array in SiO 2 cavities on indium-doped tin oxide (ITO) electrodes. We fabricated a SiO 2 cavity array on the surface of an ITO electrode using highly ordered self-assembly of polystyrene spheres as a template. Gold NPs were electrodeposited at the bottom of the SiO 2 cavities, and single gold NPs dominated with (1 1 1) facets were generated in each cavity by annealing the electrode at a high temperature. Such (1 1 1) facets were the predominate trait of the single gold particle which exhibited considerable electrocatalytic activity toward oxidation of methanol, ethanol, and glycerol. This has been attributed to the formation of incipient hydrous oxides at unusually low potential on the specific (1 1 1) facet of the gold particles. Moreover, each cavity of the SiO 2 possibly behaves as an independent electrochemical cell in which the methanol molecules are trapped; this produces an environment advantageous to catalyzing electrooxidation. The oxidation of methanol on the electrodes is a mixed control mechanism (both by diffusion and electrode kinetics). This strategy both provided an approach to study electrochemical reactions on a single particle in a microenvironment and may supply a way to construct alcohols sensors
May 28, 2012 ... low cost, ease of preparation, and catalyst recycling.3,4 Among various solid .... FeCl3-SiO2 (np) to produce 1,8-dioxo-octahydro-xanthenes. RESEARCH ..... 38 G. Song, B. Wang, H. Luo and L. Yang, Catal. Commun., 2007, 8 ...
Lim, Yu Dian; Grapov, Dmitry; Hu, Liangxing; Kong, Qinyu; Tay, Beng Kang; Labunov, Vladimir; Miao, Jianmin; Coquet, Philippe; Aditya, Sheel
It has been widely reported that carbon nanotubes (CNTs) exhibit superior field emission (FE) properties due to their high aspect ratios and unique structural properties. Among the various types of CNTs, random growth CNTs exhibit promising FE properties due to their reduced inter-tube screening effect. However, growing random growth CNTs on individual catalyst islands often results in spread out CNT bundles, which reduces overall field enhancement. In this study, significant improvement in FE properties in CNT bundles is demonstrated by confining them in microfabricated SiO2 pits. Growing CNT bundles in narrow (0.5 μm diameter and 2 μm height) SiO2 pits achieves FE current density of 1-1.4 A cm-2, which is much higher than for freestanding CNT bundles (76.9 mA cm-2). From the Fowler Nordheim plots, confined CNT bundles show a higher field enhancement factor. This improvement can be attributed to the reduced bundle diameter by SiO2 pit confinement, which yields bundles with higher aspect ratios. Combining the obtained outcomes, it can be conclusively summarized that confining CNTs in SiO2 pits yields higher FE current density due to the higher field enhancement of confined CNTs.
Different possible forms of Al2O3 units in a SiO2 network are studied theoretically within the framework of density-functional theory. Total-energy differences between the various configurations are obtained, and simple thermodynamical arguments are used to provide an estimate of their relative...
Bansal, Narottam P.; Hyatt, Mark J.
Barium aluminosilicate glasses are being investigated as matrix materials in high-temperature ceramic composites for structural applications. Kinetics of crystallization of two refractory glass compositions in the barium aluminosilicate system were studied by differential thermal analysis (DTA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). From variable heating rate DTA, the crystallization activation energies for glass compositions (wt percent) 10BaO-38Al2O3-51SiO2-1MoO3 (glass A) and 39BaO-25Al2O3-35SiO2-1MoO3 (glass B) were determined to be 553 and 558 kJ/mol, respectively. On thermal treatment, the crystalline phases in glasses A and B were identified as mullite (3Al2O3-2SiO2) and hexacelsian (BaO-Al2O3-2SiO2), respectively. Hexacelsian is a high-temperature polymorph which is metastable below 1590 C. It undergoes structural transformation into the orthorhombic form at approximately 300 C accompanied by a large volume change which is undesirable for structural applications. A process needs to be developed where stable monoclinic celsian, rather than hexacelsian, precipitates out as the crystal phase in glass B.
Veltkamp, Henk-Willem; Zhao, Yiyuan; de Boer, Meint J.; Wiegerink, Remco J.; Lötters, Joost Conrad
This abstract describes an application of an easy and straightforward method for selective SiO2 etching in three dimensional structures, which is developed by our group. The application in this abstract is the protection of the buried-oxide (BOX) layer of a silicon-on-insulator (SOI) wafer against
Gasvoda, Ryan J; van de Steeg, Alex W; Bhowmick, Ranadeep; Hudson, Eric A; Agarwal, Sumit
Surface phenomena during atomic layer etching (ALE) of SiO 2 were studied during sequential half-cycles of plasma-assisted fluorocarbon (CF x ) film deposition and Ar plasma activation of the CF x film using in situ surface infrared spectroscopy and ellipsometry. Infrared spectra of the surface after the CF x deposition half-cycle from a C 4 F 8 /Ar plasma show that an atomically thin mixing layer is formed between the deposited CF x layer and the underlying SiO 2 film. Etching during the Ar plasma cycle is activated by Ar + bombardment of the CF x layer, which results in the simultaneous removal of surface CF x and the underlying SiO 2 film. The interfacial mixing layer in ALE is atomically thin due to the low ion energy during CF x deposition, which combined with an ultrathin CF x layer ensures an etch rate of a few monolayers per cycle. In situ ellipsometry shows that for a ∼4 Å thick CF x film, ∼3-4 Å of SiO 2 was etched per cycle. However, during the Ar plasma half-cycle, etching proceeds beyond complete removal of the surface CF x layer as F-containing radicals are slowly released into the plasma from the reactor walls. Buildup of CF x on reactor walls leads to a gradual increase in the etch per cycle.
Fleetwood, D.M.; Winokur, P.S.
Thermally stimulated current and capacitance voltage methods are used to investigate the thermal stability of trapped electrons associated with radiation-induced trapped positive charge in metal-oxide-semiconductor capacitors. The density of deeply trapped electrons in radiation-hardened 45 nm oxides exceeds that of shallow electrons by a factor of ∼3 after radiation exposure, and by up to a factor of 10 or more during biased annealing. Shallow electron traps anneal faster than deep traps, and seem to be at least qualitatively consistent with the model of Lelis et al. Deeper traps maybe part of a fundamentally distinct dipole complex, and/or have shifted energy levels that inhibit charge exchange with the Si
Nakano, Shinsuke; Muto, Shunsuke; Tanabe, Tetsuo
To understand the plastic deformation mechanism of SiO 2 polytypes, we measured the mechanical parameters of He + -irradiated crystalline SiO 2 (α-quartz, c-SiO 2 ) and vitreous SiO 2 (silica glass, v-SiO 2 ) as functions of the irradiation dose, by using the instrumented indentation method combined with a finite-element analysis. We extracted the effects of local rotation and bending of the SiO 4 framework (the degree of local structural freedom), which play key roles in the plastic deformation, and expressed the hardness change with a simple formula. For v-SiO 2 , the changes in the density and the number of broken bonds correlated well with the change in the degree of freedom. In contrast, for c-SiO 2 the present formulation was insufficient to fully express the hardness change in the structural disordering regime. The structure change by irradiation peculiar to this material is discussed, based on the theoretical formulation
Zhuk Sergey I.
Full Text Available Silicon electrodeposition on glassy carbon from the KF-KCl-K2SiF6, KF-KCl-K2SiF6-KOH and KF-KCl-K2SiF6-SiO2 melts was studied by the cyclic voltammetry. Тhe electroreduction of Si(IV to metallic Si was observed as a single 4-electron wave under all considered conditions. The reactions of cathode reduction of silicon from fluoride and oxyfluoride complexes were suggested. It was shown that the process can be controlled by the preliminary transformation of SiO44- to SiF62- and SiOxFyz-. The influence of the current density on structure and morphology of silicon deposits obtained during galvanostatic electrolysis of the KF-KCl-K2SiF6-SiO2 melt was studied.
Haeri, S Z; Ramezanzadeh, B; Asghari, M
In this study it has been aimed to enhance the thermal resistance of epoxy coating through incorporation of SiO 2 -GO nanohybrids. SiO 2 -GO nanohybrids were synthesized through one-step sol-gel route using a mixture of Tetraethylorthosilane (TEOS) and 3-Aminopropyl triethoxysilane (APTES) silanes. The SiO 2 -GO nanohybrids were prepared at various hydrolysis times of 24, 48 and 72h. Then 0.2wt.% of GO and SiO 2 -GO nanohybrids were separately incorporated into the epoxy coating. Results revealed that amino functionalized SiO 2 nanoparticles with particle size around 20-30nm successfully synthesized on the basal plane of GO. Results showed significant improvement of dispersion and interfacial interactions between nanohybrids and epoxy composite arising from covalent bonding between the SiO 2 -GO and the epoxy matrix. It was found that the thermal resistance of SiO 2 -GO nanohybrids and SiO 2 -GO/Epoxy nanocomposite was noticeably higher than GO and epoxy matrix, respectively. Copyright © 2017 Elsevier Inc. All rights reserved.
Photocatalysis provides a \\'green\\' approach to completely eliminate various kinds of contaminants that are fatal for current environmental and energy issues. Semiconductors are one of the most frequently used photocatalysts as they can absorb light over a wide spectral range. However, it is also well known that naked SiO2 is not an efficient photocatalyst due to its relatively large band gap, which could only absorb shortwave ultraviolet light. In this report, nanoscale particles of carbon-doped silicon dioxide (C-doped SiO2) for use in photocatalysis were successfully prepared by a facile one-pot thermal process using tetraethylorthosilicate (TEOS) as the source of both silicon and carbon. These particles were subsequently characterized by thermogravimetric analysis, X-ray diffraction, standard and high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The C-doped SiO2 displayed outstanding photocatalytic properties, as evidenced by its catalysis of Rhodamine B degradation under near-UV irradiation. We propose that carbon doping of the SiO2 lattice creates new energy states between the bottom of the conduction band and the top of the valence band, which narrows the band gap of the material. As a result, the C-doped SiO2 nanoparticles exhibit excellent photocatalytic activities in a neutral environment. The novel synthesis reported herein for this material is both energy efficient and environmentally friendly and as such shows promise as a technique for low-cost, readily scalable industrial production. © 2013 The Royal Society of Chemistry.
Full Text Available Silicon has been the choice for photonics technology because of its cost, compatibility with mass production and availability. Silicon based photonic devices are very significant from commercial point of view and are much compatible with established technology. This paper deals with deposition and characterization of SiO2 films prepared by indigenously developed chemical vapor deposition system. Ellipsometry study of prepared films showed an increase in refractive index and film thickness with the increment in deposition temperature. The deposition temperature has a significant role for stoichiometric SiO2 films, FTIR measurement has shown the three characteristics peaks of Si-O-Si through three samples prepared at temperatures 700, 750 and 800 °C while Si-O-Si stretching peak positions were observed to be shifted to lower wavenumber in accordance to the temperature. FESEM analysis has confirmed the smooth surface without any crack or disorder while EDX analysis showed the corresponding peaks of compositional SiO2 films.DOI: http://dx.doi.org/10.5755/j01.ms.22.1.7245
Huseynov, Elchin; Garibov, Adil; Mehdiyeva, Ravan; Huseynova, Efsane
In the present work, nano SiO2 particles are investigated before and after gamma irradiation (25, 50, 75, 100 and 200 kGy) using Fourier transform infrared (FTIR) spectroscopy method for the wavenumber between 400-4000 cm-1. It is found that as a result of spectroscopic analysis, five new peaks have appeared after gamma radiation. Two of new obtained peaks (which are located at 687 cm-1 and 2357 cm-1 of wavenumber) were formed as a result of gamma radiation interaction with Si-O bonds. Another three new peaks (peaks appropriate to 941, 2052 and 2357 cm-1 values of wavenumber) appear as a result of interaction of water with nano SiO2 particles after gamma irradiation. It has been defined as asymmetrical bending vibration, symmetrical bending vibration, symmetrical stretching vibration and asymmetrical stretching vibration of Si-O bonds appropriate to peaks.
Zhuravlev, K.S.; Tyschenko, I.E.; Vandyshev, E.N.; Bulytova, N.V.; Misiuk, A.; Rebohle, L.; Skorupa, W.
The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO 2 films was studied. A 'blue'-shift of PL spectrum from the SiO 2 films implanted with Si + ions to total dose of 1.2x10 17 cm -2 with increase in hydrostatic pressure was observed. For the films implanted with Si + ions to a total dose of 4.8x10 16 cm -2 high temperature annealing under high hydrostatic pressure (12 kbar) causes a 'red'-shift of photoluminescence spectrum. The 'red' photoluminescence bands are attributed to Si nanocrystals while the 'blue' ones are related to Si nanocrystals of reduced size or chains of silicon atoms or Si-Si defects. A decrease in size of Si nanocluster occurs in result of the pressure-induced decrease in the diffusion of silicon atoms. (author)
Full Text Available This study examined theSiO2 gas present in the coatings used in corrosion industry.These layers have been created by physical vapor deposition (PVD, with an appropriate performance. Sublimation of SiO2is used to protect PVD aluminum flakes from water corrosionand to generate highly porous SiO2 flakes with holes in the nanometer range. SiOx/Al/SiOx sandwiches were made as well as Ag loaded porous SiO2 as antimicrobial filler.
The work presented in this PhD Thesis provides new insights into the underlying reasons that make SiO2-MgO materials excellent catalysts for the ethanol-to-butadiene Lebedev process. In particular, the preparation technique of choice affects the structural properties of the resulting SiO2-MgO
Full Text Available In this study, red cathodoluminescence (CL) ( emission=614 nm) was observed from Pr3+ ions in a glassy (amorphous) SiO2 host. This emission was enhanced considerably when ZnO quantum dots (QDs) were incorporated in the SiO2:Pr3+ suggesting...
Full Text Available Raspberry‐like SiO2 particles with a nano‐micro‐binary structure were prepared by a simple sol‐gel method using tetraethoxysilane (TEOS and methyltriethoxysilane (MTES as precursors. The chemical components and morphology of the SiO2 particles were characterized by Fourier transform infrared spectroscopy (FT‐IR and a Transmission electron microscope (TEM. The surface topography and wetting behaviour of the raspberry‐like SiO2 surface were observed with a Scanning electron microscope (SEM and studied by the water/oil contact angle (CA, respectively. The thermal stability of the prepared SiO2 particles was characterized by TGA analysis. The results show that the highly dispersed SiO2 particles initially prepared by the sol‐gel method turn into raspberry‐like particles with during the aging process. The raspberry‐like SiO2 particles show superhydrophobicity and superoleophilicity across a wide range of pH values. The SiO2 particles were thermally stable up to 475°C, while above this temperature the hydrophobicity decreases and finally becomes superhydrophobic when the temperature reaches 600°C. The raspberry‐like SiO2 particles which were prepared have potential applications in the fields of superhydrophobic surfaces, water‐oil separation, anti‐corrosion and fluid transportation.
Tsong, I.S.T.; Monkowski, M.D.; Monkowski, J.R.; Miller, P.D.; Moak, C.D.; Appleton, B.R.; Wintenberg, A.L.
Silicon oxides thermally grown in H 2 O, O 2 , HCl/O 2 and Cl 2 /O 2 ambients were analyzed, via 1 H( 19 F,αγ) 16 O nuclear reaction and SIMS, for the presence of hydrogen. In addition, those oxides grown in HCl/O 2 and Cl 2 /O 2 ambients were analyzed with SIMS for the presence of chlorine. The SIMS data show that the hydrogen levels in these oxides were below the limit of detection for nuclear reaction experiments. The 35 Cl + depth-profiles show that chlorine is enriched at the SiO 2 interface for the HCl/O 2 grown oxides while it is more evenly distributed in oxide bulk in the Cl 2 /O 2 grown samples
This document is conceived as an overview of Guido Roma's research achievements on defects stability and kinetics in two materials of interest in nuclear science and for many other application domains: silicon dioxide and silicon carbide. An extended summary in french is followed by the main document, in english. Chapter 1 describes the context, introduces the approach and explains the choice of silicon dioxide and silicon carbide. Chapter 2 discusses several approximations and specific issues of the application of Density Functional Theory to point defects in non-metallic materials for the study of defects energetics and diffusion. Chapter 3 is devoted to native defects in silicon dioxide and the understanding of self-diffusion in crystalline and amorphous SiO 2 . Chapter 4 summarises the results on native defects and palladium impurities in silicon carbide. A conclusion, including suggestions for future developments, closes the main part of the document. (author) [fr
José Antonio Rodríguez
Full Text Available Motivated by the necessity to have all silicon optoelectronic circuits, researchers around the world are working with light emitting silicon materials. Such materials are silicon dielectric compounds with silicon content altered, such as silicon oxide or nitride, enriched in different ways with Silicon. Silicon Rich Oxide or silicon dioxide enriched with silicon, and silicon rich nitride are without a doubt the most promising materials to reach this goal. Even though they are subjected to countless studies, the light emission phenomenon has not been completely clarified. So, a review of different proposals presented to understand the light emission phenomenon including emissions related to nanocrystals and to point defects in SiO2 is presented.
Antonova, I V; Volodin, V A; Marin, D M; Skuratov, V A; Smagulova, S A; Janse van Vuuren, A; Neethling, J; Jedrzejewski, J; Balberg, I
In this paper we report the ability of swift heavy Xe ions with an energy of 480 MeV and a fluence of 10 12 cm -2 to enhance the formation of Ge nanocrystals within SiO 2 layers with variable Ge contents. These Ge-SiO 2 films were fabricated by the co-sputtering of Ge and quartz sources which followed various annealing procedures. In particular, we found that the irradiation of the Ge : SiO 2 films with subsequent annealing at 500 °C leads to the formation of a high concentration of nanocrystals (NCs) with a size of 2-5 nm, whereas without irradiation only amorphous inclusions were observed. This effect, as evidenced by Raman spectra, is enhanced by pre-irradiation at 550 °C and post-irradiation annealing at 600 °C, which also leads to the observation of room temperature visible photoluminescence. (paper)
Kosugi , T.; Kobayashi , H.; Kogure , Y.
Internal friction of (SiO2)1-x (GeO2)x glasses (x = 0, 5, 10, 24 and 100 mole%) is measured at temperatures between 1.6 and 280 K. The data are filted with the equations for thermally activated relaxation with distributing activation energies in symmetrical double-well potentials. From the determined relaxation strength spectra for each sample, the contributions from each type of microscopic structural units are calculated assuming that transverse motion of the bridging O atom in Si-O-Si, Si-...
Malik, Nishant; Finstad, Terje G; Schjølberg-Henriksen, Kari; Poppe, Erik U; Taklo, Maaike M V
Al–Al thermocompression bonding suitable for wafer level sealing of MEMS devices has been investigated. This paper presents a comparison of thermocompression bonding of Al films deposited on Si with and without a thermal oxide (SiO 2 film). Laminates of diameter 150 mm containing device sealing frames of width 200 µm were realized. The wafers were bonded by applying a bond force of 36 or 60 kN at bonding temperatures ranging from 300–550 °C for bonding times of 15, 30 or 60 min. The effects of these process variations on the quality of the bonded laminates have been studied. The bond quality was estimated by measurements of dicing yield, tensile strength, amount of cohesive fracture in Si and interfacial characterization. The mean bond strength of the tested structures ranged from 18–61 MPa. The laminates with an SiO 2 film had higher dicing yield and bond strength than the laminates without SiO 2 for a 400 °C bonding temperature. The bond strength increased with increasing bonding temperature and bond force. The laminates bonded for 30 and 60 min at 400 °C and 60 kN had similar bond strength and amount of cohesive fracture in the bulk silicon, while the laminates bonded for 15 min had significantly lower bond strength and amount of cohesive fracture in the bulk silicon. (paper)
Kaźmierczak, Andrzej; Dortu, Fabian; Schrevens, Olivier; Giannone, Domenico; Bouville, David; Cassan, Eric; Gylfason, Kristinn B.; Sohlström, Hans; Sanchez, Benito; Griol, Amadeu; Hill, Daniel
We present an efficient and highly alignment-tolerant light coupling and distribution system for a multichannel Si3N4/SiO2 single-mode photonics sensing chip. The design of the input and output couplers and the distribution splitters is discussed. Examples of multichannel data obtained with the system are given.
Full Text Available In this work we prepared double-layer antireflection coatings (DARC by using the SiO2/SiNx:H heterostructure design. SiO2 thin films were deposited by electron-beam evaporation on the conventional solar cell with SiNx:H single-layer antireflection coatings (SARC, while to avoid the coverage of SiO2 on the front side busbars, a steel mask was utilized as the shelter. The thickness of the SiNx:H as bottom layer was fixed at 80 nm, and the varied thicknesses of the SiO2 as top layer were 105 nm and 122 nm. The results show that the SiO2/SiNx:H DARC have a much lower reflectance and higher external quantum efficiency (EQE in short wavelengths compared with the SiNx:H SARC. A higher energy conversion efficiency of 17.80% was obtained for solar cells with SiO2 (105 nm/SiNx:H (80 nm DARC, an absolute conversion efficiency increase of 0.32% compared with the conventional single SiNx:H-coated cells.
Green, Eleanor C. R.; Artacho, Emilio; Connolly, James A. D.
Rocky planets and satellites form through impact and accretion processes that often involve silicate fluids at extreme temperatures. First-principles molecular dynamics (FPMD) simulations have been used to investigate the bulk thermodynamic properties of SiO2 fluid at high temperatures (4000-6000 K) and low densities (500-2240 kg m-3), conditions which are relevant to protoplanetary disc condensation. Liquid SiO2 is highly networked at the upper end of this density range, but depolymerises with increasing temperature and volume, in a process characterised by the formation of oxygen-oxygen (Odbnd O) pairs. The onset of vaporisation is closely associated with the depolymerisation process, and is likely to be non-stoichiometric at high temperature, initiated via the exsolution of O2 molecules to leave a Si-enriched fluid. By 6000 K the simulated fluid is supercritical. A large anomaly in the constant-volume heat capacity occurs near the critical temperature. We present tabulated thermodynamic properties for silica fluid that reconcile observations from FPMD simulations with current knowledge of the SiO2 melting curve and experimental Hugoniot curves.
Daldosso, N.; Dalba, G.; Fornasini, P.; Grisenti, R.; Pavesi, L.; Luppi, M.; Magri, R.; Ossicini, S.; Degoli, E.; Rocca, F.; Boninelli, S.; Priolo, F.; Spinella, C.; Iacona, F.
Light-emitting silicon nanocrystals embedded in SiO 2 have been investigated by x-ray absorption measurements in total electron and photoluminescence yields, by energy filtered transmission electron microscopy and by ab initio total energy calculations. Both experimental and theoretical results show that the interface between the silicon nanocrystals and the surrounding SiO 2 is not sharp: an intermediate region of amorphous nature and variable composition links the crystalline Si with the amorphous stoichiometric SiO 2 . This region plays an active role in the light-emission process
Stepina, N. P.; Dvurechenskii, A. V.; Armbrister, V. A.; Kesler, V. G.; Novikov, P. L.; Gutakovskii, A. K.; Kirienko, V. V.; Smagina, Zh. V.; Groetzschel, R.
Pulsed low-energy (200 eV) ion-beam induced nucleation during Ge deposition on thin SiO 2 film was used to form dense homogeneous arrays of Ge nanocrystals. The ion-beam action is shown to stimulate the nucleation of Ge nanocrystals when being applied after thin Ge layer deposition. Temperature and flux variation was used to optimize the nanocrystal size and array density required for memory device. Kinetic Monte Carlo simulation shows that ion impacts open an additional channel of atom displacement from a nanocrystal onto SiO 2 surface. This results both in a decrease in the average nanocrystal size and in an increase in nanocrystal density
Banerjee, S.P.; Bhadra, A.K.; Sircar, N.R.
The effect of addition of ZrO 2 in different proportions in the refractories of the Al 2 O 3 -SiO 2 system was studied. The investigation was confined to two broad ranges of compositions incorporating zirconia (15-30 percent and 80-85 percent) in the Al 2 O 3 -ZrO 2 -SiO 2 system. The overall attainment of properties is dependent upon the mode of fabrication and firing, and bears a relationship with the phase assemblages and the relative proportion thereof. Of the different characteristics, the trend of dissociation of zircon has been found to be specially significant vis-a-vis the temperature of firing and thermal shock resistance. Reassociation of the dissociated products has been ascribed to bring forth improved resistance to thermal spalling. The different products developed during this investigation are considered to be very promising which find useful applications in view of the properties attained by them. (auth.)
Full Text Available This paper evaluates the deposition of silica layers at atmospheric pressure as a pretreatment for the structural bonding of titanium (Ti6Al4V, Ti15V3Cr3Sn3Al in comparison to an anodizing process (NaTESi process. The SiO2 film was deposited using the LARGE plasma source, a linearly extended DC arc plasma source and applying hexamethyldisiloxane (HMDSO as a precursor. The morphology of the surface was analyzed by means of SEM, while the characterization of the chemical composition of deposited plasma layers was done by XPS and FTIR. The long-term durability of bonded samples was evaluated by means of a wedge test in hot/wet condition. The almost stoichiometric SiO2 film features a good long-term stability and a high bonding strength compared to the films produced with the wet-chemical NaTESi process.
Yaakob, N. H.; Wagiran, H.; Hossain, I.; Ramli, A. T.; Bradley, D. A.; Hashim, S.; Ali, H.
This paper describes the thermoluminescence response, sensitivity, stability and reproducibility of SiO 2 optical fibres with various electron energies and doses. The TL materials that comprise Al- and Ge-doped silica fibres were used in this experiment. The TL results are compared with those of the commercially available TLD-100. The doped SiO 2 optical fibres and TLD-100 are placed in a solid phantom and irradiated with 6, 9 and 12 MeV electron beams at doses ranging from 0.2 to 4.0 Gy using the LINAC at Hospital Sultan Ismail, Johor Bahru, Malaysia. It was found that the commercially available Al- and Ge-doped optical fibres have a linear dose-TL signal relationship. The intensity of TL response of Ge-doped fibre is markedly greater than that of the Al-doped fibre.
Chen Min; Mikecz, Anna von
Despite of their exponentially growing use, little is known about cell biological effects of nanoparticles. Here, we report uptake of silica (SiO 2 ) nanoparticles to the cell nucleus where they induce aberrant clusters of topoisomerase I (topo I) in the nucleoplasm that additionally contain signature proteins of nuclear domains, and protein aggregation such as ubiquitin, proteasomes, cellular glutamine repeat (polyQ) proteins, and huntingtin. Formation of intranuclear protein aggregates (1) inhibits replication, transcription, and cell proliferation; (2) does not significantly alter proteasomal activity or cell viability; and (3) is reversible by Congo red and trehalose. Since SiO 2 nanoparticles trigger a subnuclear pathology resembling the one occurring in expanded polyglutamine neurodegenerative disorders, we suggest that integrity of the functional architecture of the cell nucleus should be used as a read out for cytotoxicity and considered in the development of safe nanotechnology
Sun, Yifei; Narayanachari, K. V. L. V.; Wan, Chenghao; Sun, Xing; Wang, Haiyan; Cooley, Kayla A.; Mohney, Suzanne E.; White, Doug; Duwel, Amy; Kats, Mikhail A.; Ramanathan, Shriram
We present a study of co-sputtered VO2-SiO2 nanocomposite dielectric thin-film media possessing continuous temperature tunability of the dielectric constant. The smooth thermal tunability is a result of the insulator-metal transition in the VO2 inclusions dispersed within an insulating matrix. We present a detailed comparison of the dielectric characteristics of this nanocomposite with those of a VO2 control layer and of VO2/SiO2 laminate multilayers of comparable overall thickness. We demonstrated a nanocomposite capacitor that has a thermal capacitance tunability of ˜60% between 25 °C and 100 °C at 1 MHz, with low leakage current. Such thermally tunable capacitors could find potential use in applications such as sensing, thermal cloaks, and phase-change energy storage devices.
Yaakob, N.H.; Wagiran, H.; Hossain, I.; Ramli, A.T.; Bradley, D.A; Hashim, S.; Ali, H.
This paper describes the thermoluminescence response, sensitivity, stability and reproducibility of SiO 2 optical fibres with various electron energies and doses. The TL materials that comprise Al- and Ge-doped silica fibres were used in this experiment. The TL results are compared with those of the commercially available TLD-100. The doped SiO 2 optical fibres and TLD-100 are placed in a solid phantom and irradiated with 6, 9 and 12 MeV electron beams at doses ranging from 0.2 to 4.0 Gy using the LINAC at Hospital Sultan Ismail, Johor Bahru, Malaysia. It was found that the commercially available Al- and Ge-doped optical fibres have a linear dose-TL signal relationship. The intensity of TL response of Ge-doped fibre is markedly greater than that of the Al-doped fibre.
Cao, Mao-Sheng; Shi, Xiao-Ling; Fang, Xiao-Yong; Jin, Hai-Bo; Hou, Zhi-Ling; Zhou, Wei; Chen, Yu-Jin
In this paper, cagelike ZnO /SiO2 nanocomposites were prepared and their microwave absorption properties were investigated in detail. Dielectric constants and losses of the pure cagelike ZnO nanostructures were measured in a frequency range of 8.2-12.4GHz. The measured results indicate that the cagelike ZnO nanostructures are low-loss material for microwave absorption in X band. However, the cagelike ZnO /SiO2 nanocomposites exhibit a relatively strong attenuation to microwave in X band. Such strong absorption is related to the unique geometrical morphology of the cagelike ZnO nanostructures in the composites. The microcurrent network can be produced in the cagelike ZnO nanostructures, which contributes to the conductive loss.
Revesz, A. G.; Anwand, W.; Brauer, G.; Hughes, H. L.; Skorupa, W.
Positron annihilation spectroscopy of thermally grown and deposited SiO 2 films on silicon shows in a non-destructive manner that these films have a gradient in their density. The gradient is most pronounced for the oxide grown in dry oxygen. Oxidation in water-containing ambient results in an oxide with reduced gradient, similarly to the gradient in the deposited oxide. These observations are in accordance with earlier optical and other studies using stepwise etching or a set of samples of varying thickness. The effective oxygen charge, which is very likely one of the reasons for the difference in the W parameters of silica glass and quartz crystal, could be even higher at some localized configurations in the SiO 2 films resulting in increased positron trapping.
Balasubramanian, S.; Prabakar, K.; Tripura Sundari, S.
In the present work, effect of residual stress, induced due to annealing of SiO2 microcantilevers (MCs) on their resonance frequency is studied. SiO2MCs of various dimensions were fabricated using direct laser writer & wet chemical etching method and were annealed at 800 °C in oxygen environment, post release. The residual stress was estimated from the deflection profile of the MCs measured using 3D optical microscope, before and after annealing. Resonance frequency of the MCs was measured using nano-vibration analyzer and was found to change after annealing. Further the frequency shift was found to depend on the MC dimensions. This is attributed to the large stress gradients induced by annealing and associated stiffness changes.
Bornacelli, J.; Esqueda, J.A.R.; Fernandez, L.R.; Oliver, A.
We studied the photoluminescence (PL) of Si nano crystals (Si-NCs) embedded in SiO 2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm) inside the SiO 2 achieving a robust and better protected system. After metal ion implantation (Ag or Au), and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs) could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO 2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H 2 /N 2 and Ar) to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.
Mo, H.; Taub, H.; Volkmann, U.G.
on the SiO2 surface with the long-axis of the C32 molecules oriented parallel to the interface followed by a C32 monolayer with the long-axis perpendicular to it. Finally, preferentially oriented bulk particles nucleate having two different crystal structures. This growth model differs from that found...... previously for shorter alkanes deposited from the vapor phase onto solid surfaces....
Kong, Y.; Leung, T.C.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K.G.
The positron mobility in thermally grown SiO 2 is deduced from Doppler broadening lineshape data on a metal-oxide-semiconductor sample for positrons implanted into the oxide layer. The fitted mobility is ∼13(10)x10 -3 cm 2 /s V. This value is between that of the electron and hole mobilities in the same system and is two orders of magnitude smaller than the previous estimate from positron measurements
Full Text Available Ammonia gas sensing properties of tungsten trioxide thick film sensor was investigated. The doping of noble catalysts such as Pt, Pd, Au enhanced the gas sensitivity. Platinum doping was found to result in highest sensitivity. Remarkable sensitivity enhancement was realized by coating WO3 thick film sensors with SiO2 overlayer. Sol gel process derived silica overlayer increased ammonia gas sensitivity for doped as well as undoped sensor.
da Cunha Rodrigues, Gonçalo; Zelenovskiy, Pavel; Romanyuk, Konstantin; Luchkin, Sergey; Kopelevich, Yakov; Kholkin, Andrei
Electromechanical response of materials is a key property for various applications ranging from actuators to sophisticated nanoelectromechanical systems. Here electromechanical properties of the single-layer graphene transferred onto SiO2 calibration grating substrates is studied via piezoresponse force microscopy and confocal Raman spectroscopy. The correlation of mechanical strains in graphene layer with the substrate morphology is established via Raman mapping. Apparent vertical piezoresponse from the single-layer graphene supported by underlying SiO2 structure is observed by piezoresponse force microscopy. The calculated vertical piezocoefficient is about 1.4 nm V(-1), that is, much higher than that of the conventional piezoelectric materials such as lead zirconate titanate and comparable to that of relaxor single crystals. The observed piezoresponse and achieved strain in graphene are associated with the chemical interaction of graphene's carbon atoms with the oxygen from underlying SiO2. The results provide a basis for future applications of graphene layers for sensing, actuating and energy harvesting.
Need for high performance materials for advanced applications have led to the development of new concepts in materials design processing and their fabrication. The development of nanocrystalline materials with improved and novel properties is an important turning point in materials research. In present work, we report synthesis and structural characterization of Y 2 O 3 : SiO 2 nanocomposite. Sol-gel technique is being used to prepare-Y 2 O 3 SiO 2 nanocomposite due to its effectiveness in preparing samples with good mixing of starting materials and at relatively low reaction temperature. We have used Y(NO 3 ) 3 .4H 2 O and TEOS as precursors and followed usual approach of sol-gel technique, the final product of Y 2 O 3 : SiO 2 nanocomposite is obtained in the form of powder. The powder samples were sintered at different temperature for different time durations in programmable muffle furnace. The samples were characterized by complementary techniques as X-Ray Diffraction (XRD), Fourier Transforms Infrared Spectroscopy (FTIR) and Transmission Electron Microscopy (TEM). (author)
Saito, Tatsuro; Momose, Takeshi; Hoshi, Toru; Takai, Madoka; Ishihara, Kazuhiko; Shimogaki, Yukihiro
The surface of 500-mm-long microchannels in SiO2 microchips was modified using supercritical CO2 (scCO2) and a biocompatible polymer was coated on it to confer biocompatibility to the SiO2 surface. In this method, the SiO2 surface of a microchannel was coated with poly(ethylene glycol monomethacrylate) (PEGMA) as the biocompatible polymer using allyltriethoxysilane (ATES) as the anchor material in scCO2 as the reactive medium. Results were compared with those using the conventional wet method. The surface of a microchannel could not be modified by the wet method owing to the surface tension and viscosity of the liquid, but it was modified uniformly by the scCO2 method probably owing to the near-zero surface tension, low viscosity, and high diffusivity of scCO2. The effect of the surface modification by the scCO2 method to prevent the adsorption of protein was as high as that of the modification by the wet method. Modified microchips can be used in biochemical and medical analyses.
Katsumata, Toru; Morita, Kentaro; Komuro, Shuji; Aizawa, Hiroaki
Visible light thermal radiation from SiO 2 glass doped with Y, La, Ce, Pr, Nd, Eu, Tb, Dy, Ho, Er, Tm, Yb, and Lu were studied for the fiber-optic thermometer application based on the temperature dependence of thermal radiation. Thermal radiations according to Planck's law of radiation are observed from the SiO 2 fibers doped with Y, La, Ce, Pr, Eu, Tb, and Lu at the temperature above 1100 K. Thermal radiations due to f-f transitions of rare-earth ions are observed from the SiO 2 fibers doped with Nd, Dy, Ho, Er, Tm, and Yb at the temperature above 900 K. Peak intensities of thermal radiations from rare-earth doped SiO 2 fibers increase sensitively with temperature. Thermal activation energies of thermal radiations by f-f transitions seen in Nd, Dy, Ho, Er, Tm, and Yb doped SiO 2 fibers are smaller than those from SiO 2 fibers doped with Y, La, Ce, Pr, Eu, Tb, and Lu. Thermal radiation due to highly efficient f-f transitions in Nd, Dy, Ho, Er, Tm, and Yb ions emits more easily than usual thermal radiation process. Thermal radiations from rare-earth doped SiO 2 are potentially applicable for the fiber-optic thermometry above 900 K
Ross, G.G.; Smirani, R.; Levitcharsky, V.; Wang, Y.Q.; Veilleux, G.; Saint-Jacques, R.G.
Si nanocrystals (Si-nc) embedded in a SiO 2 layer have been characterized by means of transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). For local Si concentration in excess 8 x 10 21 Si + /cm 3 , the size of the Si-nc was found to be ∼3 nm and comparatively homogeneous throughout the whole implanted layer. For local Si concentration in excess of ∼2.4 x 10 22 Si + /cm 3 , the Si-nc diameter ranges from ∼2 to ∼12 nm in the sample, the Si-nc in the middle region of the implanted layer being bigger than those near the surface and the bottom of the layer. Also, Si-nc are visible deeper than the implanted depth. Characterization by XPS shows that a large quantity of oxygen was depleted from the first ∼25 nm in this sample (also visible on TEM image) and most of the SiO 2 bonds have been replaced by Si-O bonds. Experimental and simulation results suggest that a local Si concentration in excess of ∼3 x 10 21 Si/cm 3 is required for the production of Si-nc
Wang Jue; Li Qing; Shen Jun; Zhou Bin; Chen Lingyan; Jiang; Weiyang
Low density SiO 2 gels are prepared by a two-step sol-gel process from TEOS. The influence of various solution ratios on the gelation process is investigated. The comparative characterization of gels using different solvent, such as ethanol, acetone and methyl cyanide, is also given. The ultralow-density SiO 2 aerogels with density less than 10 kg/m 3 are prepared by CO 2 supercritical drying technique. The structure difference between SiO 2 aerogels prepared by conventional single-step process and the two-step process is also presented
Full Text Available Control of liquid crystal (LC orientation using a proper SiO2 alignment layer is essential for the optimization of vertically aligned nematic (VAN displays. With this aim, we studied the optical anisotropy of thin SiO2 films by generalized ellipsometry as a function of deposition angle. The columnar SiO2 structure orientation measured by a noninvasive ellipsometry technique is reported for the first time, and its morphology influence on the LC alignment is demonstrated for large deposition angles.
Huang Jinzhao; Xu Zheng; Zhao Suling; Li Yuan; Yuan Guangcai; Wang Yongsheng; Xu Xurong
The impact excitation and ionization is the most important process in layered optimization scheme and solid state cathodoluminescence. The conduction property (semiconductor property) of SiO 2 , ZnS and ZnO is studied based on organic/inorganic electroluminescence. The hot electron property (acceleration and multiplication property) of SiO 2 and ZnS is investigated based on the solid state cathodoluminescence. The results show that the SiO 2 has the fine hot electron property and the conduction property is not as good as ZnO and ZnS
Yang Yongzhen; Song Jingjing; Han Yanxing; Guo Xingmei; Liu Xuguang; Xu Bingshe
SiO 2 was firstly coated onto the surface of carbon microspheres (CMSs) using tetraethyl orthosilicate (TEOS) as precursor by Stoeber method. Then SiO 2 -encapsulated CMS (CMS-SiO 2 ) composites were self-assembled by vertical deposition, in which the effects of deposition temperature and suspension concentration on the quality of self-assembling film were investigated. Morphologies and structures of the samples were characterized by field emission scanning electron microscopy, Fourier transformation infrared spectrometry, X-ray diffraction and thermogravimetry. The results show that uniform CMS-SiO 2 composites with good mono-dispersion were prepared by Stober method with 0.5 g of CMSs, 2 mL of TEOS, 30 mL of ammonia and 12 h of reaction time, the CMSs-based films with ordered and denser structure were prepared by vertical deposition using CMS-SiO 2 composites as monodipersion spheres under suspension concentration of 1 wt% and deposition temperature of 50 deg. C. The ultraviolet-visible absorption measurement shows that the absorbance of CMS-SiO 2 composite films grew steadily with increasing suspension concentration.
Kocanda, J.; Fesič, V.; Veselý, M.; Breza, J.; Kadlečíková, M.
Similarities between the processes that occur during sputtering of monocrystalline Si by reactive O2+ primary ions and the interface SiO2/monocrystalline Si by noble gas ions (e.g., by Ar+) have motivated us to utilize the semiempirical model of P. C. Zalm and C. J. Vriezema [Nucl. Instrum. Methods B 67, 495 (1992)], modified later by M. Petravić, B. G. Svensson, and J. S. Williams [Appl. Phys. Lett. 62, 278 (1993)] to calculate the decay length λb, as defined by J. B. Clegg [Surf. Interface Anal. 10, 322 (1987)], at the SiO2/Si interface. The measured and calculated results agree remarkably well. Inconsistency observed to be larger than 100% for glancing incidence angles confirms limitations of this model that were admitted already by its authors.
Sood, D.K.; Muralidhar, G.K.
This work presents a systematic study of the deposition and characterization of NdFeB films on substrates of Si(100) and of SiO2 layer thermally grown on Si(100) held at RT, 360 deg C or 440 deg C. The post-deposition annealing is performed at 600 or 800 deg C in vacuum. The films are characterised using the analytical techniques of RBS, SIMS, XRD, OM and SEM. Results indicate that SiO2 is, in deed, an excellent diffusion barrier layer till 600 deg C but becomes relatively less effective at 800 deg C. Without this barrier layer, interdiffusion at the Si-NdFeB film interface leads to formation of iron silicides, α-Fe and B exclusion from the diffusion zone, in competition with the formation of the magnetic NdFeB phase. (authors)
GarcIa, N; Yan Zang; Ballestar, A; Barzola-Quiquia, J; Bern, F; Esquinazi, P
The electrical potential on the surface of ∼300 nm thick SiO 2 grown on single-crystalline Si substrates has been characterized at ambient conditions using electric field microscopy. Our results show an inhomogeneous potential distribution with fluctuations up to ∼0.4 V within regions of 1 μm. The potential fluctuations observed at the surface of these usual dielectric holders of graphene sheets should induce strong variations in the graphene charge densities and provide a simple explanation for some of the anomalous behaviors of the transport properties of graphene.
The distribution of experimental dielectric strengths of SiO 2 gate dielectric in a CMOS transistor structure is shown to be composed of a primary, statistically-normal distribution of high dielectric strength and a secondary distribution spread through the lower dielectric strength region. The dielectric strength was not significantly affected by high level (1 x 10 6 RADS (Si)) gamma radiation or high temperature (200 0 C) stress. The primary distribution breakdowns occurred at topographical edges, mainly at the gate/field oxide interface, and the secondary distribution breakdowns occurred at random locations in the central region of the gate
Khatri, R.; Asoka-Kumar, P.; Nielsen, B.; Roellig, L.O.; Lynn, K.G.
Using Doppler broadening annihilation spectroscopy, we investigated the properties of irradiated samples of SiO 2 /Si(100) with 117 nm thick oxide layer, grown in dry O 2 on p- and n-type substrates. These samples were irradiated with γ rays and x rays at doses in the range of 7x10 4 --9x10 6 rad and 50--2000 mJ/cm 2 , respectively. The changes observed in the Doppler broadening line shape parameter after irradiation and its recovery during isochronal annealing were used to obtain an activation energy of 1.48--1.61 eV required for annealing the defects
Drabik, M.; Kousal, J.; Pinosh, Y.; Choukourov, A.; Biederman, H.; Slavínská, D.; Macková, Anna; Boldyryeva, Hanna; Pešička, J.
Roč. 81, č. 7 (2007), s. 920-927 ISSN 0042-207X Institutional research plan: CEZ:AV0Z10480505 Keywords : composite films * magnetron * sputtering * polyimide * SiO2 Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 0.881, year: 2007
Naffouti, Meher; David, Thomas; Benkouider, Abdelmalek; Favre, Luc; Ronda, Antoine; Berbezier, Isabelle; Bidault, Sebastien; Bonod, Nicolas; Abbarchi, Marco
We report the fabrication of Si-based dielectric Mie resonators via a low cost process based on solid-state dewetting of ultra-thin amorphous Si on SiO2. We investigate the dewetting dynamics of a few nanometer sized layers annealed at high temperature to form submicrometric Si-particles. Morphological and structural characterization reveal the polycrystalline nature of the semiconductor matrix as well as rather irregular morphologies of the dewetted islands. Optical dark field imaging and spectroscopy measurements of the single islands reveal pronounced resonant scattering at visible frequencies. The linewidth of the low-order modes can be ∼20 nm in full width at half maximum, leading to a quality factor Q exceeding 25. These values reach the state-of-the-art ones obtained for monocrystalline Mie resonators. The simplicity of the dewetting process and its cost-effectiveness opens the route to exploiting it over large scales for applications in silicon-based photonics.
Full Text Available Yellow light emitting Mn2+-doped b-Zn2SiO4 phosphor nanoparticles embedded in SiO2 host matrix, were prepared by a simple solid-phase reaction under natural atmosphere at 1500 °C for 2 hours after the incorporation of manganese doped zinc oxide nanoparticles in silica using sol-gel method. The SiO2/Zn2SiO4:Mn nanocomposite was characterized by X-ray diffraction (XRD, transmission electron microscopy (TEM, scanning electron microscopy (SEM and photoluminescence (PL. The nanopowder was crystallized in triclinic b-Zn2SiO4 phase with a particles size varies between 70 nm and 84 nm. The SiO2/b-Zn2SiO4:Mn nanocomposite exhibited a broad yellow emission band at 575 nm under UV excitation light. The dependence of the intensity and energy position of the obtained PL band on measurement temperature and power excitation will be discussed.
Full Text Available Synthesis of Fe3O4/SiO2 modified with N-(2-aminoethyl-3-aminopropyl group (Fe3O4/SiO2/ED via coating method and its application for adsorption-desorption of anionic gold in aqueous solution have been conducted. The synthesized product was characterized with an X-ray diffractometer (XRD, a Fourier transform infrared (FT-IR spectrophotometer and a transmission electron microscopy (TEM. Adsorption of Au(III was conducted in a batch system and the variables included pH, contact time, and initial concentration were investigated. Results showed that magnetite/silica has been successfully functionalized with N-(2-aminoethyl-3-aminopropyl in a homogeneous system. Kinetics study showed that adsorption of Au(III followed the pseudo-second order model with rate constant of 0.710 g mmol L-1min-1. Furthermore, the experimental data fitted well with the Langmuir isotherm model with the maximum adsorption capacity for Au(III of 142.9 mg g-1 and the energy of 25.0 kJ mol-1. Gold loaded on the Fe3O4/SiO2/ED could be easily desorbed with 0.2 mol L-1 HCl containing 2 wt.% of thiourea with recovery of 99.8%. Fe3O4/SiO2/ED was reusable and stable in 5 cycles of adsorption-desorption with recovery more than 90%. Fe3O4/SiO2/ED showed high selectivity towards Au(III in the multimetal system Au(III/Cu(II/Cr(VI with the coefficient selectivity for αAu-Cu of 227.5and for αAu-Cr of 12.3.
Full Text Available In this present work, high specific surface area and strong visible light absorption nitrogen doped TiO2-SiO2 photocatalyst was synthesized by using sol-gel coupled with hydrothermal treatment method. Nitrogen was found to improve the specific surface area while it also distorted the crystal phase of the resulting N-TiO2-SiO2 catalyst. As the N/ (TiO2-SiO2 molar ratio was more than 10%, the derived catalyst presented the superior specific surface area up to 260 m2/g. Nevertheless, its photoactivity towards phenol removal was observed to significantly decrease, which could results from the too low crystallinity. The nitrogen content in N-TiO2-SiO2 catalyst was therefore necessary to be optimized in terms of phenol removal efficiency and found at ca. 5%. Under UVA light and natural sunlight irradiation of 80 min, N(5%-TiO2-SiO2 catalyst presented the phenol decomposition efficiencies of 68 and 100%, respectively. It was also interestingly found in this study that the reaction rate was successfully expressed using a Langmuir-Hinshelwood (L-H model, indicating the L-H nature of photocatalytic phenol decomposition reaction on the N-TiO2-SiO2 catalyst.
Yan Hongli; Jia Renxu; Tang Xiaoyan; Song Qingwen; Zhang Yuming
The effect of the different re-oxidation annealing (ROA) processes on the SiO 2 /SiC interface characteristics has been investigated. With different annealing processes, the flat band voltage, effective dielectric charge density and interface trap density are obtained from the capacitance—voltage curves. It is found that the lowest interface trap density is obtained by the wet-oxidation annealing process at 1050 °C for 30 min, while a large number of effective dielectric charges are generated. The components at the SiO 2 /SiC interface are analyzed by X-ray photoelectron spectroscopy (XPS) testing. It is found that the effective dielectric charges are generated due to the existence of the C and H atoms in the wet-oxidation annealing process. (semiconductor technology)
Suvorova, N.A.; Lopez, C.M.; Irene, E.A.; Suvorova, A.A.; Saunders, M.
(Ba,Sr)TiO 3 (BST) thin films were deposited by ion sputtering on both bare and oxidized Si. Spectroscopic ellipsometry results have shown that a SiO 2 underlayer of nearly the same thickness (2.6 nm in average) is found at the Si interface for BST sputter depositions onto nominally bare Si, 1 nm SiO 2 on Si or 3.5 nm SiO 2 on Si. This result was confirmed by high-resolution electron microscopy analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO 2 . Using the conductance method, capacitance-voltage measurements show a decrease in the interface trap density D it of an order of magnitude for oxidized Si substrates with a thicker SiO 2 underlayer. Further reduction of D it was achieved for the capacitors grown on oxidized Si and annealed in forming gas after metallization
Suvorova, N. A.; Lopez, C. M.; Irene, E. A.; Suvorova, A. A.; Saunders, M.
(Ba,Sr)TiO3(BST) thin films were deposited by ion sputtering on both bare and oxidized Si. Spectroscopic ellipsometry results have shown that a SiO2 underlayer of nearly the same thickness (2.6 nm in average) is found at the Si interface for BST sputter depositions onto nominally bare Si, 1 nm SiO2 on Si or 3.5 nm SiO2 on Si. This result was confirmed by high-resolution electron microscopy analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO2. Using the conductance method, capacitance-voltage measurements show a decrease in the interface trap density Dit of an order of magnitude for oxidized Si substrates with a thicker SiO2 underlayer. Further reduction of Dit was achieved for the capacitors grown on oxidized Si and annealed in forming gas after metallization.
Zhu, Rongrong; Wang, Zhaoqi; Liang, Peng; He, Xiaolie; Zhuang, Xizhen; Huang, Ruiqi; Wang, Mei; Wang, Qigang; Qian, Yechang; Wang, Shilong
Vascular endothelial growth factor (VEGF) plays an important role in angiogenesis and is highly expressed in carcinoma, which make it an important target for tumor targeting therapy. Neuroblastoma is the main cause for cancer-related death in children. Like most solid tumors, it is also accompanied with the overexpression of VEGF. Doxorubicin Hydrochloride (DOX), a typical chemotherapeutic agent, exhibits efficient anticancer activities for various cancers. However, DOX, without targeting ability, usually causes severe damage to normal tissues. To overcome the shortages, we designed a novel nano-composite, which is Bevacizumab (Bev) modified SiO 2 @LDH nanoparticles (SiO 2 @LDH-Bev), loading with DOX to achieve targeting ability and curative efficiency. SiO 2 @LDH-DOX and SiO 2 @LDH-Bev-DOX nanoparticles were synthesized and the physicochemical properties were characterized by TEM detection, Zeta potential analysis, FTIR, Raman and XPS analysis. Then in vitro and in vivo anti-neuroblastoma efficiency, targeting ability and mechanisms of anti-carcinoma and anti-angiogenesis of SiO 2 @LDH-Bev-DOX were explored. Our results indicated that we obtained the core-shell structure SiO 2 @LDH-Bev with an average diameter of 253±10nm and the amount of conjugated Bev was 4.59±0.38μg/mg SiO 2 @LDH-Bev. SiO 2 @LDH-Bev-DOX could improve the cellular uptake and the targeting effect of DOX to brain and tumor, enhance the anti-neuroblastoma and anti-angiogenesis efficiency both in vitro and in vivo, and alleviate side effects of DOX sharply, especially hepatic injury. In addition, we also demonstrated that angiogenesis inhibitory effect was mediated by DOX and VEGF triggered signal pathways, including PI3K/Akt, Raf/MEK/ERK, and adhesion related pathways. In summary, SiO 2 @LDH-Bev could be a potential VEGF targeting nanocarrier applied in VEGF positive cancer therapy. This paper explored that a novel core-shell structure nanomaterial SiO 2 @LDH and modified SiO 2 @LDH with
George, I; Vranic, S; Boland, S; Borot, M C; Marano, F; Baeza-Squiban, A
Safe development and application of nanotechnologies in many fields require better knowledge about their potential adverse effects on human health. Evidence of abilities of nanoparticles (NPs) to cross epithelial barriers and reach secondary organs via the bloodstream led us to investigate the translocation of SiO 2 NPs of 50 nm (50 nm-SiO 2 -NPs) across human bronchial epithelial cells that are primary targets after exposure to inhaled NPs. We quantified the translocation of fluorescently labelled SiO 2 NPs at non-cytotoxic concentrations (5 and 10 μg/cm 2 ) across Calu-3 epithelial monolayer. After 14 days in culture Calu-3 cells seeded onto 3 μm-polycarbonate Transwell membranes formed an efficient bronchial barrier assessed by measurement of the transepithelial electric resistance and quantification of the permeability of the monolayer. After 24 hours of exposure, we observed a significant translocation of NPs that was more important when the initial NP concentration decreased. Confocal microscopy observations revealed NP uptake by cells and an important NP retention inside the porous membrane. In conclusion, 50 nm-SiO 2 -NPs can cross the human bronchial epithelial barrier without affecting the integrity of the epithelial cell monolayer.
Wang Junlong; Wang Chuang; Jiao Gengsheng; Wang Qiuya
A technology of conjugated tri-component interpenetrating polymer networks was applied to synthesize a nano-SiO 2 /polymethylmethacrylate (PMMA)/cyanate (CE) composite through an asynchronous synthesis way. The microstructure of the composite was characterized using infrared spectroscopy (IR) and transmission electron microscopy (TEM). The mechanical properties were measured in German-made DL-1000B and XCL-40 universal material test machines, respectively. Results showed that both the impact strength and the flexural strength were in the optimum status when 3% SiO 2 /PMMA/CE was chosen as a sample with the PMMA/CE ratio of 20/80. Compared with the strengths of pure cyanate, those of the composite were raised by 137.28% and 31.29%, respectively. When 3% nano-SiO 2 was added, the impact strength was increased by 29.96% and the flexural strength by 20.05%, compared with the strengths of polymers without SiO 2 . Analysis and measurements by IR and TEM indicated that no chemical reactions took place among components in the composite. The interpenetration of the conjugated tri-component improved the loading capacity of the polymer, hence the toughness enhancement of cyanate.
Giyjaz E. Bekmukhamedov
Full Text Available Due to the continuously rising demand for C3–C5 olefins it is important to improve the performance of catalysts for dehydrogenation of light alkanes. In this work the effect of modification by SiO2 on the properties of the alumina support and the chromia-alumina catalyst was studied. SiO2 was introduced by impregnation of the support with a silica sol. To characterize the supports and the catalysts the following techniques were used: low-temperature nitrogen adsorption; IR-spectroscopy; magic angle spinning 29Si nuclear magnetic resonance; temperature programmed desorption and reduction; UV-Vis-, Raman- and electron paramagnetic resonance (EPR-spectroscopy. It was shown that the modifier in amounts of 2.5–7.5 wt % distributed on the support surface in the form of SiOx-islands diminishes the interaction between the alumina support and the chromate ions (precursor of the active component. As a result, polychromates are the compounds predominantly stabilized on the surface of the modified support; under thermal activation of the catalyst and are reduced to the amorphous Cr2O3. This in turn leads to an increase in the activity of the catalyst in the dehydrogenation of isobutane.
Liu, Xue; Wang, Zengyao; Zhao, Chengji; Bu, Wenhuan; Na, Hui
A series of fluorinated dental resin composites were prepared with two kinds of SiO 2 particles. Bis-GMA (bisphenol A-glycerolate dimethacrylate)/4-TF-PQEA (fluorinated acrylate monomer)/TEGDMA (triethylene glycol dimethacrylate) (40/30/30, wt/wt/wt) was introduced as resin matrix. SiO 2 nanopartices (30nm) and SiO 2 microparticles (0.3µm) were silanized with 3-methacryloxypropyl trimethoxysilane (γ-MPS) and used as fillers. After mixing the resin matrix with 0%, 10%, 20%, 30% SiO 2 nanopartices and 0%, 10%, 20%, 30%, 40%, 50% SiO 2 microparticles, respectively, the fluorinated resin composites were obtained. Properties including double bond conversion (DC), polymerization shrinkage (PS), water sorption (W p ), water solubility (W y ), mechanical properties and cytotoxicity were investigated in comparison with those of neat resin system. The results showed that, filler particles could improve the overall performance of resin composites, particularly in improving mechanical properties and reducing PS of composites along with the addition of filler loading. Compared to resin composites containing SiO 2 microparticles, SiO 2 nanoparticles resin composites had higher DC, higher mechanical properties, lower PS and lower W p under the same filler content. Especially, 50% SiO 2 microparticles reinforced resins exhibited the best flexural strength (104.04 ± 7.40MPa), flexural modulus (5.62 ± 0.16GPa), vickers microhardness (37.34 ± 1.13 HV), compressive strength (301.54 ± 5.66MPa) and the lowest polymerization (3.42 ± 0.22%). Copyright © 2018 Elsevier Ltd. All rights reserved.
Li, Yue; Wang, Xiang-Yu; Jiang, Xiao-Ping; Ye, Jing-Jing; Zhang, Ye-Wang; Zhang, Xiao-Yun
Fe3O4@SiO2-graphene oxide (GO) composites were successfully fabricated by chemical binding of functional Fe3O4@SiO2 and GO and applied to immobilization of cellulase via covalent attachment. The prepared composites were further characterized by transmission electron microscopy and Fourier transform infrared spectroscopy. Fe3O4 nanoparticles (NPs) were monodisperse spheres with a mean diameter of 17 ± 0.2 nm. The thickness of SiO2 layer was calculated as being 6.5 ± 0.2 nm. The size of Fe3O4@SiO2 NPs was 24 ± 0.3 nm, similar to that of Fe3O4@SiO2-NH2. Fe3O4@SiO2-GO composites were synthesized by linking of Fe3O4@SiO2-NH2 NPs to GO with the catalysis of EDC and NHS. The prepared composites were used for immobilization of cellulase. A high immobilization yield and efficiency of above 90 % were obtained after the optimization. The half-life of immobilized cellulase (722 min) was 3.34-fold higher than that of free enzyme (216 min) at 50 °C. Compared with the free cellulase, the optimal temperature of the immobilized enzyme was not changed; but the optimal pH was shifted from 5.0 to 4.0, and the thermal stability was enhanced. The immobilized cellulase could be easily separated and reused under magnetic field. These results strongly indicate that the cellulase immobilized onto the Fe3O4@SiO2-GO composite has potential applications in the production of bioethanol.
Li, Yue; Wang, Xiang-Yu; Jiang, Xiao-Ping; Ye, Jing-Jing; Zhang, Ye-Wang; Zhang, Xiao-Yun
Fe 3 O 4 @SiO 2 –graphene oxide (GO) composites were successfully fabricated by chemical binding of functional Fe 3 O 4 @SiO 2 and GO and applied to immobilization of cellulase via covalent attachment. The prepared composites were further characterized by transmission electron microscopy and Fourier transform infrared spectroscopy. Fe 3 O 4 nanoparticles (NPs) were monodisperse spheres with a mean diameter of 17 ± 0.2 nm. The thickness of SiO 2 layer was calculated as being 6.5 ± 0.2 nm. The size of Fe 3 O 4 @SiO 2 NPs was 24 ± 0.3 nm, similar to that of Fe 3 O 4 @SiO 2 –NH 2 . Fe 3 O 4 @SiO 2 –GO composites were synthesized by linking of Fe 3 O 4 @SiO 2 –NH 2 NPs to GO with the catalysis of EDC and NHS. The prepared composites were used for immobilization of cellulase. A high immobilization yield and efficiency of above 90 % were obtained after the optimization. The half-life of immobilized cellulase (722 min) was 3.34-fold higher than that of free enzyme (216 min) at 50 °C. Compared with the free cellulase, the optimal temperature of the immobilized enzyme was not changed; but the optimal pH was shifted from 5.0 to 4.0, and the thermal stability was enhanced. The immobilized cellulase could be easily separated and reused under magnetic field. These results strongly indicate that the cellulase immobilized onto the Fe 3 O 4 @SiO 2 –GO composite has potential applications in the production of bioethanol
Kohara, Kaori; Yamamoto, Shinpei; Seinberg, Liis; Murakami, Tatsuya; Tsujimoto, Masahiko; Ogawa, Tetsuya; Kurata, Hiroki; Kageyama, Hiroshi; Takano, Mikio
Carboxylated SiO2-coated α-Fe nanoparticles have been successfully prepared via CaH2-mediated reduction of SiO2-coated Fe3O4 nanoparticles followed by surface carboxylation. These α-Fe-based nanoparticles, which are characterized by ease of coating with additional functional groups, a large magnetization of 154 emu per g-Fe, enhanced corrosion resistivity, excellent aqueous dispersibility, and low cytotoxicity, have potential to be a versatile platform in biomedical applications.
Miao, Guang; Ye, Feiyan; Wu, Luoming; Ren, Xiaoling; Xiao, Jing; Li, Zhong; Wang, Haihui
This study investigates selective adsorption of thiophenic compounds from fuel over TiO2/SiO2 under UV-irradiation. The TiO2/SiO2 adsorbents were prepared and then characterized by N2 adsorption, X-ray diffraction and X-ray photoelectron spectroscopy. Adsorption isotherms, selectivity and kinetics of TiO2/SiO2 were measured in a UV built-in batch reactor. It was concluded that (a) with the employment of UV-irradiation, high organosulfur uptake of 5.12 mg/g was achieved on the optimized 0.3TiO2/0.7SiO2 adsorbent at low sulfur concentration of 15 ppmw-S, and its adsorption selectivity over naphthalene was up to 325.5; (b) highly dispersed TiO2 served as the photocatalytic sites for DBT oxidation, while SiO2 acted as the selective adsorption sites for the corresponding oxidized DBT using TiO2 as a promoter, the two types of active sites worked cooperatively to achieve the high adsorption selectivity of TiO2/SiO2; (c) The kinetic rate-determining step for the UV photocatalysis-assisted adsorptive desulfurization (PADS) over TiO2/SiO2 was DBT oxidation; (d) consecutive adsorption-regeneration cycles suggested that the 0.3TiO2/0.7SiO2 adsorbent can be regenerated by acetonitrile washing followed with oxidative air treatment. This work demonstrated an effective PADS approach to greatly enhance adsorption capacity and selectivity of thiophenic compounds at low concentrations for deep desulfurization under ambient conditions. Copyright © 2015 Elsevier B.V. All rights reserved.
Zhai, Yunyun; Xiao, Ke; Yu, Jianyong; Ding, Bin
Highlights: • Electrospinning followed by dip-coating was used to fabricate SiO 2 /PEI-PU membranes. • Introducing PEI, PU and SiO 2 improved safety, tensile strength and ionic conductivity. • Coating SiO 2 also restrained the micro-shorting and migrated the self-discharge. • SiO 2 /PEI-PU membranes based cell exhibited prominent cycling and rate performance. - ABSTRACT: The performance of lithium ion battery based on electrospun nanofibrous membranes has gained a great deal of attention in the past decades, but the intrinsic low mechanical strength and large pore size of electrospun membranes limit their battery performance. To overcome this limitation, a powerful strategy for designing, fabricating and evaluating silica nanoparticles coated polyetherimide-polyurethane (SiO 2 /PEI-PU) nanofibrous composite membranes is easily developed via electrospinning followed by a dip-coating process. Benefiting from the high porosity, interpenetrating network structure and synergetic effect of PU, PEI and SiO 2 nanoparticles, the as-prepared composite membranes exhibit high ionic conductivity (2.33 mS cm −1 ), robust tensile strength (15.65 MPa) and improved safety (excellent thermal resistance and flame retardant property). Additionally, the as-prepared composite membranes possess relatively narrow pore size distribution with average pore size of 0.58 μm after coating SiO 2 nanoparticles, which plays an important role in hindering the micro-shorting and mitigating self-discharge. Significantly, the SiO 2 /PEI-PU membranes based Li/LiFePO 4 cell exhibits more excellent cycling stability with capacity retention of 98.7% after 50 cycles at 0.2 C rate and better rate capability compared with the Celgard membrane based cell. The results clearly demonstrate that this is a promising separator candidate for next-generation lithium ion batteries, which may represent a significant step toward separators with improved performance
Barranco Quero, Ángel; Cotrino Bautista, José; Yubero Valencia, Francisco; Espinós, J. P.; Rodríguez González-Elipe, Agustín
Synthesis of porous SiO2 thin films in room temperature was carried out using plasma enhanced chemical vapor deposition (CVD) in an electron cyclotron resonance microwave reactor with a downstream configuration.The gas adsorption properties and the type of porosity of the SiO2 thin films were assessed by adsorption isotherms of toluene at room temperature.The method could also permit the tailoring synthesis of thin films when both composition and porosity can be simultaneously and independent...
Wang, Yali; Cao, Xiaoan; Li, Jinwen; Chen, Nan
In the present work, two morphologies of SiO(2) nanomaterials (SiO(2) nanotubes and nanoparticles) have been successfully synthesized in supercritical fluids (SCFs). The cataluminescence (CTL) features of the two SiO(2) nanomaterials to some common harmful gases were compared, and the results showed that SiO(2) nanotubes had better CTL sensing characteristic to some common harmful gases. The SiO(2) nanotubes not only had uniform size and shape with a high specific surface area, but also exhibited superior sensitivity and selectivity to ethyl acetate vapor. Using the SiO(2) nanotubes as sensing material, a CTL sensor for ethyl acetate vapor was developed. The proposed sensor showed high sensitivity and specificity to ethyl acetate at optimal temperature of 293°C, a wavelength of 425 nm and a flow rate of 345 mL/min. With a detection limit of 0.85 ppm, the linear range of CTL intensity versus concentrations of ethyl acetate vapor was 2.0-2000 ppm. None or only very low levels of interference were observed while the foreign substances such as acetone, acetaldehyde, acetic acid, formaldehyde, ammonia, ethanol, benzene and methanol were passing through the sensor. This method allows rapid determination of gaseous ethyl acetate at workshop. Copyright © 2011 Elsevier B.V. All rights reserved.
Yang, Huan; Ding, Qiuyu; Li, Ben Q.; Jiang, Xinbing; Zhang, Manman
Though noble metal nanoparticles have been explored to enhance the performance of the organic solar cell, effect of dielectric nanoparticles, and coupled effect of dielectric and metal nanoparticles, have rarely been reported, if at all, on organic solar cell. This work reports an experimental study on synergetic scattering of SiO2 and Ag nanoparticles in a bulk organic heterojunction for the broadband light absorption enhancement. The wavelength scale SiO2 particles were arranged as a monolayer on the surface of the solar cell to guide incident light into the active layer and prolong the effective optical length of the entered energy. This is achieved by the excitation of whispering gallery modes in SiO2 nanoparticles and by leaky mode radiation. When small size Ag particles were incorporated into the transport layer of the solar cell, synergetic scattering of SiO2 and Ag nanoparticles is formed by coupling of the whispering gallery mode of closely arranged SiO2 particles atop and collaborative localized surface plasma resonance scattering of Ag nanoparticles dispersed in the transport layer. As a result, the performance of the organic solar cell is greatly enhanced and the short-circuit current density has an improvement of 42.47%. Therefore, the organic solar cell incorporated with SiO2 and Ag particles presents a meaningful strategy to achieve high energy-harvesting performance. [Figure not available: see fulltext.
Chen, YiFan; Jiang, Bo; Liu, Li; Du, Yunzhe; Zhang, Tong; Zhao, LiWei; Huang, YuDong
The increasing growth of the inkjet market makes the inkjet printing more necessary. A composite material based on core-shell structure has been developed and applied to prepare inkjet printing layer. In this contribution, the ink printing record layers based on SiO2@Al13 core-shell composite was elaborated. The prepared core-shell composite materials were characterized by X-ray photoelectron spectroscopy (XPS), zeta potential, X-ray diffraction (XRD), scanning electron microscopy (SEM). The results proved the presence of electrostatic adsorption between SiO2 molecules and Al13 molecules with the formation of the well-dispersed system. In addition, based on the adsorption and the liquid permeability analysis, SiO2@Al13 ink printing record layer achieved a relatively high ink uptake (2.5 gmm-1) and permeability (87%), respectively. The smoothness and glossiness of SiO2@Al13 record layers were higher than SiO2 record layers. The core-shell structure facilitated the dispersion of the silica, thereby improved its ink absorption performance and made the clear printed image. Thus, the proposed procedure based on SiO2@Al13 core-shell structure of dye particles could be applied as a promising strategy for inkjet printing.
Li Zhixia; Kawashita, Masakazu; Araki, Norio; Mitsumori, Michihide; Hiraoka, Masahiro; Doi, Masaaki
We have prepared magnetic SiO 2 microspheres with a diameter of 20-30 μm as thermoseeds for hyperthermia of cancer. These were prepared by directly introducing preformed magnetic iron oxide nanoparticles (IONPs) into microspheres of a SiO 2 gel matrix derived from the hydrolysis of tetramethoxysilane (TMOS) in a water-in-oil (W/O) emulsion. Dimethylformamide (DMF) was used as a stabilizer, methanol (CH 3 OH) as a dispersant and ammonia (NH 4 OH) as the catalyst for the formation of the spherical particles in the aqueous phase of the W/O emulsion. The magnetic IONPs were synthesized hydrochemically in an aqueous system composed of ferrous chloride, sodium nitrate and sodium hydroxide. Mono-dispersed magnetic SiO 2 gel microspheres with a diameter of approximately 20 μm were successfully obtained by adding a determined amount of solution with a molar ratio of TMOS/DMF/CH 3 OH/H 2 O/NH 4 OH = 1:1.4:9:20:0.03 to kerosene with a surfactant (sorbitan monooleate/sorbitan monostearate = 3:1 by weight ratio) that was 30 wt% of the total amount of the oil phase. These were estimated to contain up to 60 wt% of IONPs that consisted mainly of Fe 3 O 4 and showed a higher specific absorption rate (SAR = 27.9-43.8 W g -1 ) than that of the starting IONPs (SAR = 25.3 W g -1 ) under an alternating current magnetic field of 300 Oe and 100 kHz.
Koo, Sangmo; Jang, Hyunchul; Ko, Dae-Hong
In this study, we investigated the formation of a Si1- x Ge x fin structure in SiO2 trench arrays via an ultra-high-vacuum chemical-vapor deposition (UHV-CVD) selective epitaxial growth (SEG) process. Defect generation and microstructures of Si1- x Ge x fin structures with different Ge concentrations ( x = 0.2, 0.3 and 0.45) were examined. In addition, the strain evolution of a Si1- x Ge x fin structure was analyzed by using reciprocal space mapping (RSM). An (111) facet was formed from the Si1- x Ge x epi-layer and SiO2 trench wall interface to minimize the interface and the surface energy. The Si1- x Ge x fin structures were fully relaxed along the direction perpendicular to the trenches regardless of the Ge concentration. On the other hand, the fin structures were fully or partially strained along the direction parallel to the trenches depending on the Ge concentration: fully strained Si0.8Ge0.2 and Si0.7Ge0.3, and a Si0.55Ge0.45 strain-relaxed buffer. We further confirmed that the strain on the Si1- x Ge x fin structures remained stable after oxide removal and H2/N2 post-annealing.
Corrêa, S. A.; Soares, G. V.; Radtke, C.; Stedile, F. C.
The incorporation of water vapor in SiO 2 films thermally grown on 6H-SiC(0 0 0 1) and on Si (0 0 1) was investigated using nuclear reaction analyses. Water isotopically enriched in deuterium ( 2H or D) and in 18O was used. The dependence of incorporated D with the water annealing temperature and initial oxide thickness were inspected. The D amount in SiO 2/SiC structures increases continuously with temperature and with initial oxide thickness, being incorporated in the surface, bulk, and interface regions of SiO 2 films. However, in SiO 2/Si, D is observed mostly in near-surface regions of the oxide and no remarkable dependence with temperature or initial oxide thickness was observed. At any annealing temperature, oxygen from water vapor was incorporated in all depths of the oxide films grown on SiC, in contrast with the SiO 2/Si.
Shigematsu, T.; Yonezawa, H.
A simplified method for the substoichiometric analysis of phosphorus has been developed and applied to determine the concentration distribution of phosphorus in the region of a SiO 2 -Si interface in order to explain why phosphorus is lost from the ion-implanted silicon surface throughout the oxidation and oxide removal processes. It is revealed that phosphorus piles up on the SiO 2 side at the interface by the thermal oxidation of silicon surface and is removed with the oxide by wet etching and with the resulting silicon by RCA cleaning. This results in a total loss of ion-implanted phosphorus of 3.5%. (author) 11 refs.; 2 figs.; 3 tabs
Li Wei; Zheng Shaohua; Cao Bingqiang; Ma Shiyu
In this article, the lubrication properties of ZrO 2 /SiO 2 composite nanoparticles modified with aluminum zirconium coupling agent as additives in lubricating oil under variable applied load and concentration fraction were reported. It was demonstrated that the modified nanoparticles as additives in lubrication can effectively improve the lubricating properties. Under an optimized concentration of 0.1 wt%, the average friction coefficient was reduced by 16.24%. This was because the nanoparticles go into the friction zone with the flow of lubricant, and then the sliding friction changed to rolling friction with a result of the reduction of the friction coefficient.
ZEIGMAN Yury Veniaminovich,
Full Text Available When oil production is increasing due to intensive oilfield development methods supporting seam pressure by water injection oil producers face the problem of displacement agent break in more permeable intervals of petroleum reservoir. That leads to dramatic increase of product inundation for well stock and decrease of economic efficiency for well performance. Nowadays the petroleum engineers have proposed more than 100 technologies designed to restrict water inflows and flooding agent to bottom-hole zone of the production wells. The water inflows restriction technologies are distinguished by the type of applied chemical compositions and the way how the chemical compositions are delivered to bottom-hole zone. The analysis of the currently applied chemical compositions has allowed authors to reveal the common feature. The common feature is that the currently applied chemical compositions are non-selective and they produce isolating or blocking effect onto water-saturated and oil-saturated zones of the petroleum reservoir. The application of the nonselective high-stability chemical compositions leads to uncontrolled colmatation of all treated intervals and makes it difficult to involve them into filtration process in future. This work presents the technology for the selective reservoir stimulation based on emulsion systems with SiO2 nanoparticles content and gelling acid composition. The technology was developed for complex impact on formation system, that achieved by blocking water-saturated intervals of reservoir and stimulation of less permeable oil-saturated intervals of reservoir. The paper shows the results of complex laboratory experiments to study viscosity parameters of emulsion systems with SiO2 nanoparticles content. The results of the experiments revealed the ability of the SiO2 nanoparticles to rise dynamic viscosity of the different type of emulsion systems: oil in water and water in oil. Test for thermostability of the modified
Vo Van Hoang; Nguyen Trung Hai; Hoang Zung
By using molecular dynamics (MD) simulations we found a transition from a tetrahedral to an octahedral network structure in an amorphous SiO 2 model under compression from 2.20 to 5.35 g/cm 3 . And on heating of a high density amorphous (hda) model of 5.35 g/cm 3 at zero pressure, the structure transforms to a low density amorphous (lda) form. Simulations were done in a model containing 3000 particles under periodic boundary conditions with interatomic potentials which have a weak Coulomb interaction and a Morse type short-range interaction
Espinosa, G.; Golzarri, J.I.; Vazquez, C.; Fragoso, R.
Fission fragment tracks from 252 Cf have been observed in SiO 2 optical fiber, using an atomic force microscope (AFM), after a very short chemical etching in hydrofluoric acid solution at normal temperature. The nuclear track starting and evolution process is followed by the AFM direct measurements on the material surface and beyond a fine layer of the surface material. The images of the scanned cones were determined observing the two predominant energies from 252 Cf fission fragments and the development of the tracks in the 150 μm diameter optical fiber conduit
Barillot, T; Grojo, D; Gertsvolf, M; Rayner, D M; Corkum, P B; Lei, S
By comparing simulations with experiment, we show that the effective refractive index of fused SiO 2 can be locally reduced by (1.8 ± 0.2)% by femtosecond laser nanostructuring. We create a microlens of material containing a planar array of nanocracks embedded inside fused silica and probe how it refracts or absorbs light as a function of pulse energy. The self-generated microlens lowers the peak light intensity by deflecting the light around the focus. We obtain the refractive index by simulating the beam transport using the 3D wave equation in conjunction with the measured dimensions of the modified material.
Heidari, Elham; Xu, Xiaochuan; Tang, Naimei; Mokhtari-Koushyar, Farzad; Dalir, Hamed; Chen, Ray T.
Here a photonic waveguide on Al2O3/SiO2 platform is proposed to cover the 240 320 nm wavelength-range, which is of paramount significance in protein and nuclei acid quantification. Our optical waveguide increases path-length and overlap integration for light-matter interaction with proteins. The proposed system detects one order less proteins concentration as low as 12.5 μg/ml compared with NanoDropTM that detects Beer-Lambert-law.
Yang, Manli; Shi, Jinsheng; Xia, Yanzhi
Sodium alginate (SA)/polyvinyl alcohol (PVA)/SiO 2 nanocomposite films were prepared by in situ polymerization through solution casting and solvent evaporation. The effect of different SA/PVA ratios, SiO 2 , and glycerol content on the mechanical properties, water content, water solubility, and water vapor permeability were studied. The nanocomposite films were characterized by Fourier transform infrared, X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and thermal stability (thermogravimetric analysis/differential thermogravimetry) analyses. The nanocomposites showed the highest values of mechanical properties, such as SA/PVA ratio, SiO 2 , and glycerol content was 7:3, 6wt.%, and 0.25g/g SA, respectively. The tensile strength and elongation at break (E%) of the nanocomposites increased by 525.7% and 90.7%, respectively, compared with those of the pure alginate film. The Fourier transform infrared spectra showed a new SiOC band formed in the SA/PVA/SiO 2 nanocomposite film. The scanning electron microscopy image revealed good adhesion between SiO 2 and SA/PVA matrix. After the incorporation of PVA and SiO 2 , the water resistance of the SA/PVA/SiO 2 nanocomposite film was markedly improved. Transparency decreased with increasing PVA content but was enhanced by adding SiO 2 . Copyright © 2017. Published by Elsevier B.V.
Zhao, J. P.; Huang, D. X.; Jacobson, A. J.; Chen, Z. Y.; Makarenkov, B.; Chu, W. K.; Bahrim, B.; Rabalais, J. W.
Under ultrahigh vacuum conditions, extremely small Ge nanodots embedded in SiO 2 , i.e., Ge-SiO 2 quantum dot composites, have been formed by ion implantation of 74 Ge + isotope into (0001) Z-cut quartz at a low kinetic energy of 9 keV using varying implantation temperatures. Transmission electron microscopy (TEM) images and micro-Raman scattering show that amorphous Ge nanodots are formed at all temperatures. The formation of amorphous Ge nanodots is different from reported crystalline Ge nanodot formation by high energy ion implantation followed by a necessary high temperature annealing process. At room temperature, a confined spatial distribution of the amorphous Ge nanodots can be obtained. Ge inward diffusion was found to be significantly enhanced by a synergetic effect of high implantation temperature and preferential sputtering of surface oxygen, which induced a much wider and deeper Ge nanodot distribution at elevated implantation temperature. The bimodal size distribution that is often observed in high energy implantation was not observed in the present study. Cross-sectional TEM observation and the depth profile of Ge atoms in SiO 2 obtained from x-ray photoelectron spectra revealed a critical Ge concentration for observable amorphous nanodot formation. The mechanism of formation of amorphous Ge nanodots and the change in spatial distribution with implantation temperature are discussed
Shukla, Gokaran; Archer, Thomas; Sanvito, Stefano
SiO2 and HfO2 are both high-k, wide-gap semiconductors, currently used in the microelectronic industry as gate barriers. Here we investigate whether the same materials can be employed to make magnetic tunnel junctions, which in principle can be amenable for integration in conventional Si technology. By using a combination of density functional theory and the nonequilibrium Green's functions method for quantum transport we have studied the transport properties of Co [0001 ] /SiO2[001 ] /Co [0001 ] and Fe [001 ] /HfO2[001 ] /Fe [001 ] junctions. In both cases we found a quite large magnetoresistance, which is explained through the analysis of the real band structure of the magnets and the complex one of the insulator. We find that there is no symmetry spin filtering for the Co-based junction since the high transmission Δ2' band crosses the Fermi level, EF, for both spin directions. However, the fact that Co is a strong ferromagnet makes the orbital contribution to the two Δ2' spin subbands different, yielding magnetoresistance. In contrast for the Fe-based junction symmetry filtering is active for an energy window spanning between the Fermi level and 1 eV below EF, with Δ1 symmetry contributing to the transmission.
Rosales-Sosa, Gustavo A; Masuno, Atsunobu; Higo, Yuji; Inoue, Hiroyuki
Obtaining "hard" and "crack-resistant" glasses have always been of great important in glass science and glass technology. However, in most commercial glasses both properties are not compatible. In this work, colorless and transparent xAl2O3-(100-x)SiO2 glasses (30 ≤ x ≤ 60) were fabricated by the aerodynamic levitation technique. The elastic moduli and Vickers hardness monotonically increased with an increase in the atomic packing density as the Al2O3 content increased. Although a higher atomic packing density generally enhances crack formation in conventional oxide glasses, the indentation cracking resistance increased by approximately seven times with an increase in atomic packing density in binary Al2O3-SiO2 glasses. In particular, the composition of 60Al2O3 • 40SiO2 glass, which is identical to that of mullite, has extraordinary high cracking resistance with high elastic moduli and Vickers hardness. The results indicate that there exist aluminosilicate compositions that can produce hard and damage-tolerant glasses.
DiMaria, D.J.; Young, D.R.; Hunter, W.R.; Serrano, C.M.
The position of the centroid of electrons trapped on sites resulting from aluminum implantation into SiO 2 is measured by using the photo I-V technique for energies from 15 to 40 keV, oxide thicknesses from 49 to 140 nm, and post-implant annealing temperature from 600 to 1050 0 C in N 2 for 30 min. The centroid of the trapped electrons is found to be identical to that of the implanted aluminum from SIMS measurements, regardless of annealing temperature from 600 to 1050 0 C, and located closer (by less than 9 nm) to the Al--SiO 2 interface than predicted from the Lindhard-Scharff-Schott (LSS) calculations of Gibbons, Johnson, and Mylroie. Comparison of centroids determined from photo I-V and SIMS measurements as a function of SiO 2 thickness also implies that the distributions of the ions and negative trapped charge are the same. The trapping behavior of these sites is discussed in the accompanying paper by Young et al
Sakurai, T.; Kawata, H.; Sato, T.; Hisatsugu, T.; Hashimoto, H.; Furuya, T.
The lateral spread of implanted P + ions and the shape of the mask window have been observed simultaneously using the technique of staining the cleaved surface and scanning electron microscopy for the Si samples with the SiO 2 mask window with a tapered edge. The mask edge with a gradient of 45 0 or 78 0 to the Si surface and the implanted n-type region with a carrier concentration higher than 2 x 10 17 /cm 3 are observed in the same photograph. The observed maximum lateral spread when the gradient of the mask edge is 45 0 is about 1.6 times larger than that when the gradient is 78 0 . The calculated results of the lateral spread agree relatively well with the experimental data although the precise analysis based on the definite basis is necessary
Uedono, Akira; Tanigawa, Shoichiro; Kawano, Takao; Itoh, Hisayoshi
Defects in 3 MeV electron irradiated vitreous SiO 2 (v-SiO 2 ) were probed by the positron annihilation technique. For unirradiated v-SiO 2 specimens, almost all positrons were found to annihilate from positronium (Ps) states. This high formation probability of Ps was attributed to the trapping of positrons by open-space defects. The formation probability of Ps was decreased by the electron irradiation. The observed inhibition of the Ps formation was attributed to the trapping of positrons by point defects introduced and/or activated by the irradiation. From measurements of the lifetime distribution of Ps, it was found that, by the electron irradiation, the mean size of open-space defects was decreased and the size distribution of such defects was broadened. (Author)
Zhu, Haibo; Ould-Chikh, Samy; Dong, Hailin; Llorens, Isabelle; Saih, Youssef; Anjum, Dalaver H.; Hazemann, Jean Louis; Basset, Jean-Marie
The VOx/SiO2 catalysts for oxidative dehydrogenation of propane were synthesized by a simple grafting method. The VOCl3 was first grafted at the surface of SiO2, which was dehydrated at different temperature (from 200 to 1000°C). The formed grafted complexes were then calcined in air, leading to the formation of VOx/SiO2 catalysts. The synthesized catalysts were characterized by nitrogen adsorption, SEM, Raman spectroscopy, temperature-programmed reduction, and extended X-ray absorption fine structure analysis. The SiO2 pretreatment temperature has an evident effect on the loading and dispersion of VOx on SiO2, which finally affects their catalytic performance. High SiO2 treatment temperature is beneficial to dispersing the vanadium oxide species at the SiO2 surface. These materials are efficient catalysts for the catalytic oxidative dehydrogenation of propane to propylene. The best selectivity to propylene is achieved on the VOx/SiO2-(1000) catalyst. The high selectivity and activity are well maintained for three days catalytic reaction. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The VOx/SiO2 catalysts for oxidative dehydrogenation of propane were synthesized by a simple grafting method. The VOCl3 was first grafted at the surface of SiO2, which was dehydrated at different temperature (from 200 to 1000°C). The formed grafted complexes were then calcined in air, leading to the formation of VOx/SiO2 catalysts. The synthesized catalysts were characterized by nitrogen adsorption, SEM, Raman spectroscopy, temperature-programmed reduction, and extended X-ray absorption fine structure analysis. The SiO2 pretreatment temperature has an evident effect on the loading and dispersion of VOx on SiO2, which finally affects their catalytic performance. High SiO2 treatment temperature is beneficial to dispersing the vanadium oxide species at the SiO2 surface. These materials are efficient catalysts for the catalytic oxidative dehydrogenation of propane to propylene. The best selectivity to propylene is achieved on the VOx/SiO2-(1000) catalyst. The high selectivity and activity are well maintained for three days catalytic reaction. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Soares, V. O.; Soares, P.; Peitl, O.; Zanotto, E. D.; Duran, A.; Castro, Y.
The sol-gel process is widely used to obtain coatings on glass-ceramic substrates in order to improve the scratch and abrasion resistance, also providing a bright and homogeneous appearance of a glaze avoiding expensive final polishing treatments. This paper describes the preparation of silica and silica / zirconia coatings by sol-gel method on Li 2 O-Al 2 O3-SiO 2 (LAS) glassceramic substrates produced by sintering. The coatings were deposited by dip-coating on LAS substrates and characterized by optical microscopy and spectral ellipsometry. On the other hand, hardness and elastic modulus, coefficient of friction and abrasion and scratch resistance of the coatings were determined and compared with the substrate properties. Coatings deposited on LAS glass-ceramic confere the substrate a bright and homogeneous aspect, similar to a glaze, improving the appearance and avoiding the final polishing. However these coatings do not increase the scratch resistance of the substrate only equaling the properties of the glass-ceramic. (Author)
Savchyn, Oleksandr; Coffey, Kevin R.; Kik, Pieter G.
The presence of indirect Er 3+ excitation in Si-rich SiO 2 is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er 3+ ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be ∼14.5 at. % for samples without Si nanocrystals (annealed at 600 deg. C) and ∼11.5 at. % for samples with Si nanocrystals (annealed at 1100 deg. C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is increased, with subsequent deactivation and removal of these sensitizers at high Si concentrations. The optimized Si excess concentration is predicted to generate maximum Er-related gain at 1.54 μm in devices based on Er-doped Si-rich SiO 2 .
Yang, Y.M.; Wu, X.L.; Siu, G.G.; Huang, G.S.; Shen, J.C.; Hu, D.S.
Using magnetron cosputtering of SiO 2 , Ge, and Si targets, Si-based SiO 2 :Ge:Si films were fabricated for exploring the influence of Si target proportion (P Si ) and annealing temperature (Ta) on formation, local structure, and phonon properties of nanocrystalline Si 1-x Ge x (nc-Si 1-x Ge x ). At low P Si and Ta higher than 800 deg. C, no nc-Si 1-x Ge x but a kind of composite nanocrystal consisting of a Ge core, GeSi shell, and amorphous Si outer shell is formed in the SiO 2 matrix. At moderate P Si , nc-Si 1-x Ge x begins to be formed at Ta=800 deg. C and coexists with nc-Ge at Ta=1100 deg. C. At high P Si , it was disclosed that both optical phonon frequency and lattice spacing of nc-Si 1-x Ge x increase with raising Ta. The possible origin of this phenomenon is discussed by considering three factors, the phonon confinement, strain effect, and composition variation of nc-Si 1-x Ge x . This work will be helpful in understanding the growth process of ternary GeSiO films and beneficial to further investigations on optical properties of nc-Ge 1-x Si x in the ternary matrix
Fu Mingyue; Tsai, J.-H.; Yang, C.-F.; Liao, C.-H.
We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO 2 films implanted by different doses of Si + ions. Room-temperature PL from 400-nm-thick SiO 2 films implanted to a dose of 3x10 16 cm -2 shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950-1150 deg. C) and duration (5-20 s). The reported approach of implanting silicon into SiO 2 films followed by RTA may be effective for tuning Si-based photonic devices.
Yaakob, Nor Haliza; Wagiran, Husin; Ramli, Ahmad Termizi; Ali, Hassan; Asni, Hazila
Recently, research groups have reported a number of radiation effects on the applications of SiO2 optical fibres with possible use as dosimeter material because these optical fibre provide a good basis for medical radiation dosimetry. The objective of this study is to investigate the thermoluminescence response and fading characteristic for germanium and aluminium doped SiO2 optical fibres with photon irradiation. These optical fibres are placed in solid phantom and irradiated to 6 and 10 MV photon beam at dose ranging from 0.06 Gy to 0.24 Gy using Primus MLC 3339 linear accelerator at Hospital Sultan Ismail, Johor Bahru. In fading studies, the TL measurements were continued up to 14 days period. The optical fibres will produce glow curves whereby the information is then analyzed. Al and Ge-doped optical fibres have a linear dose-TL signal relationship that is proportionality between the TL signal and the doses. Comparison for TL response between different linear accelerator showed a good agreement because these optical fibres also have a linear dose-TL signal relationship even using different equipments.
Wei Yaowei; Zhang Zhe; Liu Hao; Ouyang Sheng; Zheng Yi; Tang Gengyu; Chen Songlin; Ma Ping
Laser conditioning is one of the important methods to improve the laser damage threshold of film optics. Firstly, a large aperture laser was used to irradiate the HfO 2 /SiO 2 reflectors, which were evaporated from hafnia and silica by e-beam. Secondly, a laser calorimeter was used to test the film absorption before and after laser irradiation. Focused ion beam (FIB) was few reported using on laser film, it was used to study the damage morphology and explore the cause of damage. The shooting of the partial ejection on nodule was obtained for the first time, which provided the basis for study the damage process. The results show that film absorption was decreased obviously after the laser irradiation, laser conditioning can raise the laser damage threshold by the 'cleaning mechanism'. For the HfO 2 /SiO 2 reflectors, laser conditioning was effective to eject the nodules on substrate. It resulted from the nodule residue not to affect the subsequent laser. In addition, laser conditioning was not effective to the nodule in the film, which might be from the material spatter in coating process. In this case, other method could be used to get rid of the nodules. (authors)
Cullen, William; Yamamoto, Mahito; Pierre-Louis, Olivier; Einstein, Theodore; Fuhrer, Michael
Atomically-thin graphene is arguably the thinnest possible mechanical membrane: graphene's effective thickness (the thickness of an isotropic continuum slab which would have the same elastic and bending stiffness) is significantly less than 1 å, indicating that graphene can distort out-of-plane to conform to sub-nanometer features. Here we study the elastic response of graphene supported on a SiO2 substrate covered with SiO2 nanoparticles. At a low density of nanoparticles, graphene is largely pinned to the substrate due to adhesive interaction. However, with increasing nanoparticle density, graphene's elasticity dominates adhesion and strain is relieved by the formation of wrinkles which connect peaks introduced by the supporting nanoparticles. At a critical density, the wrinkles percolate, resulting in a wrinkle network. We develop a simple elastic model allowing for adhesion which accurately predicts the critical spacing between nanoparticles for wrinkle formation. This work has been supported by the University of Maryland NSF-MRSEC under Grant No. DMR 05-20471 with supplemental funding from NRI, and NSF-DMR 08-04976.
Albuquerque Adriana Silva de
Full Text Available Granular systems composed by nanostructured magnetic materials embedded in a non-magnetic matrix present unique physical properties that depend crucially on their nanostructure. In this work, we have studied the structural and magnetic properties of NiZn-ferrite nanoparticles embedded in SiO2, a granular system synthesized by sol-gel processing. Samples with ferrite volumetric fraction x ranging from 6% to 78% were prepared, and characterized by X-ray diffraction, Mössbauer spectroscopy and vibrating sample magnetometry. Our results show the formation of pure stoichiometric NiZn-ferrite in the SiO2 matrix for x < 34%. Above these fraction, our samples presented also small amounts of Fe2O3. Mössbauer spectroscopy revealed the superparamagnetic behaviour of the ferrimagnetic NiZn-ferrite nanoparticles. The combination of different ferrite concentration and heat treatments allowed the obtaintion of samples with saturation magnetization between 1.3 and 68 emu/g and coercivity ranging from 0 to 123 Oe, value which is two orders of magnitude higher than the coercivity of bulk NiZn-ferrite.
Beeman, J.W.; Gentils, A.; Giuliani, A.; Mancuso, M.; Pessina, G.; Plantevin, O.; Rusconi, C.
In germanium-based light detectors for scintillating bolometers, a SiO 2 anti-reflective coating is often applied on the side of the germanium wafer exposed to light with the aim to improve its light collection efficiency. In this paper, we report about a measurement, performed in the temperature range 25–35 mK, of the light-collection increase obtained thanks to this method, which resulted to be of the order of 20%. The procedure followed has been carefully selected in order to minimize systematic effects. The employed light sources have the same spectral features (peaking at ∼630nm wavelength) that will characterize future neutrinoless double beta decay experiments on the isotope 82 Se and based on ZnSe crystals, such as LUCIFER. The coupling between source and light detector reproduces the configuration used in scintillating bolometers. The present measurement clarifies the role of SiO 2 coating and describes a method and a set-up that can be extended to the study of other types of coatings and luminescent materials
Beeman, J. W.; Gentils, A.; Giuliani, A.; Mancuso, M.; Pessina, G.; Plantevin, O.; Rusconi, C.
In germanium-based light detectors for scintillating bolometers, a SiO2 anti-reflective coating is often applied on the side of the germanium wafer exposed to light with the aim to improve its light collection efficiency. In this paper, we report about a measurement, performed in the temperature range 25-35 mK, of the light-collection increase obtained thanks to this method, which resulted to be of the order of 20%. The procedure followed has been carefully selected in order to minimize systematic effects. The employed light sources have the same spectral features (peaking at ˜630 nm wavelength) that will characterize future neutrinoless double beta decay experiments on the isotope 82Se and based on ZnSe crystals, such as LUCIFER. The coupling between source and light detector reproduces the configuration used in scintillating bolometers. The present measurement clarifies the role of SiO2 coating and describes a method and a set-up that can be extended to the study of other types of coatings and luminescent materials.
Full Text Available Yb3+-doped phosphate glasses containing different amounts of SiO2 were successfully synthesized by the conventional melt-quenching method. The influence mechanism of SiO2 on the structural and spectroscopic properties was investigated systematically using the micro-Raman technique. It was worth noting that the glass with 26.7 mol % SiO2 possessed the longest fluorescence lifetime (1.51 ms, the highest gain coefficient (1.10 ms·pm2, the maximum Stark splitting manifold of 2F7/2 level (781 cm−1, and the largest scalar crystal-field NJ and Yb3+ asymmetry degree. Micro-Raman spectra revealed that introducing SiO2 promoted the formation of P=O linkages, but broke the P=O linkages when the SiO2 content was greater than 26.7 mol %. Based on the previous 29Si MAS NMR experimental results, these findings further demonstrated that the formation of [SiO6] may significantly affect the formation of P=O linkages, and thus influences the spectroscopic properties of the glass. These results indicate that phosphosilicate glasses may have potential applications as a Yb3+-doped gain medium for solid-state lasers and optical fiber amplifiers.
Wang, Ling; Zeng, Huidan; Yang, Bin; Ye, Feng; Chen, Jianding; Chen, Guorong; Smith, Andew T.; Sun, Luyi
Yb3+-doped phosphate glasses containing different amounts of SiO2 were successfully synthesized by the conventional melt-quenching method. The influence mechanism of SiO2 on the structural and spectroscopic properties was investigated systematically using the micro-Raman technique. It was worth noting that the glass with 26.7 mol % SiO2 possessed the longest fluorescence lifetime (1.51 ms), the highest gain coefficient (1.10 ms·pm2), the maximum Stark splitting manifold of 2F7/2 level (781 cm−1), and the largest scalar crystal-field NJ and Yb3+ asymmetry degree. Micro-Raman spectra revealed that introducing SiO2 promoted the formation of P=O linkages, but broke the P=O linkages when the SiO2 content was greater than 26.7 mol %. Based on the previous 29Si MAS NMR experimental results, these findings further demonstrated that the formation of [SiO6] may significantly affect the formation of P=O linkages, and thus influences the spectroscopic properties of the glass. These results indicate that phosphosilicate glasses may have potential applications as a Yb3+-doped gain medium for solid-state lasers and optical fiber amplifiers. PMID:28772601
Li, Chen; Metzler, Dominik; Oehrlein, Gottlieb S.; Lai, Chiukin Steven; Hudson, Eric A.
Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO_2 ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar"+ ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO_2 from the surface. In the present article, the authors describe controlled etching of Si_3N_4 and SiO_2 layers of one to several Angstroms using this cyclic ALE approach. Si_3N_4 etching and etching selectivity of SiO_2 over Si_3N_4 were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si_3N_4 were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si_3N_4 has a lower physical sputtering energy threshold than SiO_2, Si_3N_4 physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si_3N_4 to SiO_2 ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO_2 to Si_3N_4 etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si_3N_4 surfaces. This highly selective etching is explained by a lower carbon consumption of Si_3N_4 as compared to SiO_2. The comparison of C_4F_8 and CHF_3 only showed a difference in etching selectivity for FC depleted conditions. For FC accumulation conditions
Ghislotti, G.; Nielsen, B.; Asoka-Kumar, P.; Lynn, K.G.; Di Mauro, L.F.; Corni, F.; Tonini, R.
Positron annihilation spectroscopy (PAS) is used to study Si-rich SiO 2 samples prepared by implantation of Si (160 keV) ions at doses in the range 3x10 16 endash 3x10 17 cm -2 and subsequent thermal annealing at high temperature (up to 1100 degree C). Samples implanted at doses higher than 5x10 16 cm -2 and annealed above 1000 degree C showed a PAS spectrum with an annihilation peak broader than the unimplanted sample. We discuss how these results are related to the process of silicon precipitation inside SiO 2 . copyright 1997 American Institute of Physics
Wang, Haibin; Chen, Eryu; Jia, Xianbu; Liang, Lijun; Wang, Qi
Graphical abstract: - Highlights: • The SiO 2 and PTFE NP-filled coatings exhibit excellent superhydrophobicity. • PTFE-filled coatings show denser structures and better liquid resistance than SiO 2 . • Air pocket of Wentzel model explains the difference in the superhydrophobicity. - Abstract: Superhydrophobicity is extensively investigated because of the numerous methods developed for water-repellant interface fabrication. Many suitable functional materials for the production of superhydrophobic surfaces on various substrates are still being explored. In this study, inorganic SiO 2 and organic polytetrafluoroethylene (PTFE) nanoparticles (NPs) are used for a comparative study on the performance of superhydrophobic coating on carbon steel surfaces. The NPs are added to PTFE coating emulsions by physical blending to form coating mixtures. Raw SiO 2 NPs are then hydrophobized using KH-570 and validated by Fourier transform-infrared spectroscopy (FT-IR) and Dynamic Laser Scattering (DLS) grain size analyses. The microstructures of the surfaces are characterized by contact angle (CA) measurements and field emission-scanning electron microscope (FE-SEM) images. The prepared surfaces are subjected to adhesion, hardness, water resistance, and acid/alkali erosion tests. Hydrophobized SiO 2 -filled coating surfaces are found to have better uniformity than raw SiO 2 regardless of their similar maximum static contact angles (SCAs) about 150°. A SCA of 163.1° is obtained on the PTFE NP-filled coating surfaces that have a considerably denser structure than SiO 2 . Thermogravimetric (TG) and differential scanning calorimetry (DSC) analyses reveal that all fabricated surfaces have good thermal stability and tolerate temperatures up to 550 °C. The PTFE NP-filled coating surfaces also exhibit excellent water and acid resistance. A possible mechanism concerning the amount of trapped air is proposed in relation to practical superhydrophobic surface fabrication
Nazari, Ali; Riahi, Shadi
Research highlights: → TiO 2 nanoparticles effects on flexural strength of self compacting concrete. → Physical and microstructural consideration. → Mechanical tests. → Thermal analysis. → Porosimetry. - Abstract: In the present study, flexural strength, thermal properties and microstructure of self compacting concrete with different amount of SiO 2 nanoparticles has been investigated. SiO 2 nanoparticles with the average particle size of 15 nm were partially added to self compacting concrete and various behaviors of the specimens have been measured. The results indicate that SiO 2 nanoparticles are able to improve the flexural strength of self compacting concrete and recover the negative effects of superplasticizer on flexural strength of the specimens. SiO 2 nanoparticle as a partial replacement of cement up to 4 wt% could accelerate C-S-H gel formation as a result of the increased crystalline Ca(OH) 2 amount at the early ages of hydration. The increased the SiO 2 nanoparticles' content more than 4 wt%, causes the reduced the flexural strength because of unsuitable dispersion of nanoparticles in the concrete matrix. Accelerated peak appearance in conduction calorimetry tests, more weight loss in thermogravimetric analysis and more rapid appearance of peaks related to hydrated products in X-ray diffraction results, all also indicate that SiO 2 nanoparticles up to 4 wt% could improve the mechanical and physical properties of the specimens. Finally, SiO 2 nanoparticles could improve the pore structure of concrete and shift the distributed pores to harmless and few-harm pores.
Canut, B.; Blanchin, M.G.; Ramos-Canut, S.; Teodorescu, V.; Toulemonde, M.
Silicon oxide films thermally grown on Si(1 0 0) wafers were irradiated with 200 MeV 197 Au ions in the 10 9 -10 1 cm -2 fluence range. The targets were then etched at room temperature in aqueous HF solution (1 vol.%) for various durations. Atomic force microscopy (AFM) in the tapping mode was used to probe the processed surfaces. Conical holes with a low size dispersion were evidenced. Their surface diameter varies between 20 and 70 nm, depending on the etching time. Sol-gel dip coating technique, associated with a further annealing treatment performed at 500 o C for 15 min, was used to fill the nanopores created in SiO 2 with a transparent conductive oxide (SnO 2 doped with antimony). Transmission electron microscopy (TEM) performed on cross-sectional specimen showed that SnO 2 :Sb crystallites of ∼5 nm mean size are trapped in the holes without degrading their geometry
Joong Kim, Kyung; Park, Ki Tae; Lee, Jong Wan
The thickness measurement of ultra-thin SiO 2 films thinner than 1 nm was studied by X-ray photoelectron spectroscopy (XPS). Amorphous SiO 2 thin films were grown on amorphous Si films to avoid the thickness difference due to the crystalline structure of a substrate. SiO 2 thin films were grown by ion beam sputter deposition under oxygen gas flow and the thickness was measured by in situ XPS. The attenuation length was determined experimentally by a SiO 2 film with a known thickness. The straight line fit between the measured thickness using XPS and the nominal thickness showed a good linear relation with a gradient of 0.969 and a small offset of 0.126 nm. The gradient measured at the range of 3.4-0.28 nm was very close to that measured at sub-nanometer range of 1.13-0.28 nm. This result means that the reliable measurement of SiO 2 film thickness below 1 nm is possible by XPS
CO2 is an important volatile system relevant for planetary sciences and fundamental chemistry. Molecular CO2 has doubly bonded O=C=O units but high pressure-high temperature (HP-HT) studies have recently shown its transformation into a three-dimensional network of corner-linked [CO4] units analogous to the silica mineral polymorphs, through intermediate non-molecular phases. Here, we report P-V-T data on CO2-IV ice from time-of-flight neutron diffraction experiments, which allow determining the compressibility and thermal expansivity of this intermediate molecular-to-non-molecular phase.1 Aditionally, we have explored the SiO2-CO2 phase diagram and the potential formation of silicon carbonate compounds. New data obtained by laser-heating diamond-anvil experiments in CO2-filled microporous silica polymorphs will be shown. In particular, these HP-HT experiments explore the existence of potential CO2/SiO2 compounds with tetrahedrally-coordinated C/Si atoms by oxygens, which are predicted to be stable (or metastable) by state-of-the-art ab initio simulations.2,3 These theoretical predictions were supported by a recent study that reports the formation of a cristobalite-type Si0.4C0.6O2 solid solution at high-pressures and temperatures, which can be retained as a metastable solid down to ambient conditions.4 Entirely new families of structures could exist based on [CO4]4- units in various degrees of polymerisation, giving rise to a range of chain, sheet and framework solids like those found in silicate chemistry. References S. Palaich et al., Am. Mineral. Submitted (2015)  A. Morales-Garcia et al., Theor. Chem. Acc. 132, 1308 (2013)  R. Zhou et al., Phys. Rev. X, 4, 011030 (2014)  M. Santoro et al. Nature Commun. 5, 3761 (2014)
Asoka-Kumar, P.; Lynn, K.G.
Positron annihilation spectroscopy of overlayers, interfaces, and buried regions of semiconductors has seen a rapid growth in recent years. The characteristics of the annihilation gamma rays depend strongly on the local environment of the annihilation sites, and can be used to probe defect concentrations in a range inaccessible to conventional defect probes. Some of the recent success of the technique in examining low concentrations of point defects in technologically important Si-based structures is discussed
Xu, Linhua; Zheng, Gaige; Miao, Juhong; Su, Jing; Zhang, Chengyi; Shen, Hua; Zhao, Lilong
ZnO/SiO 2 nanocomposite films with periodic structure were prepared by electron beam evaporation technique. Regulating effect of SiO 2 interlayer with various thicknesses on the optical properties of ZnO/SiO 2 thin films was investigated deeply. The analyses of X-ray diffraction show that the ZnO layers in ZnO/SiO 2 nanocomposite films have a wurtzite structure and are preferentially oriented along the c-axis while the SiO 2 layers are amorphous. The scanning electron microscope images display that the ZnO layers are composed of columnar grains and the thicknesses of ZnO and SiO 2 layers are all very uniform. The SiO 2 interlayer presents a significant modulation effect on the optical properties of ZnO thin films, which is reflected in the following two aspects: (1) the transmittance of ZnO/SiO 2 nanocomposite films is increased; (2) the photoluminescence (PL) of ZnO/SiO 2 nanocomposite films is largely enhanced compared with that of pure ZnO thin films. The ZnO/SiO 2 nanocomposite films have potential applications in light-emitting devices and flat panel displays. -- Highlights: ► ZnO/SiO 2 nanocomposite films with periodic structure were prepared by electron beam evaporation technique. ► The SiO 2 interlayer presents a significant modulation effect on the optical properties of ZnO thin films. ► The photoluminescence of ZnO/SiO 2 nanocomposite films is largely enhanced compared with that of pure ZnO thin films. ► The ZnO/SiO 2 nanocomposite films have potential applications in light-emitting devices and flat panel displays
Koman, B.P.; Gal'chynskyy, O.V.; Kovalyuk, R.O.; Shkol'nyy, A.K.
The aim of the work was to investigate alpha-particle irradiation induced defects in Si-SiO 2 structures by means of the thermostimulated discharge currents (TSDC) analysis. The object of investigation were (p-Si)-SiO 2 structures formed by a combined oxidation of the industrial p-Si wafers in dry and wet oxygen at temperature of 1150 C. The TSD currents were investigated in the temperature range between 90 and 500 K under linear heating rate. Pu 238 isotopes were the source of alpha-particles with an energy of 4-5 MeV and a density of 5.10 7 s -1 cm -2 . The TSD current curves show two peculiar maxima at about 370 and 480 K. Alpha-particle irradiation doesn't affect the general shape of the TSDC curves but leads to a shift of the maximum at 370 K and reduces the total electret charge which is accumulated in the Si-SiO 2 structures during polarization. The energy distribution function of the defects which are involved in SiO 2 polarization has been calculated. It showes that defects with activation energies of about 0.8 and 1.0 eV take part in forming the electret state, and these activation energies have certain energy distributions. It has been found that the TSDC maximum at 370 K has space charge nature and is caused by migration of hydrogen ions. In irradiated samples hydrogen and natrium ions localize on deeper trapping centres induced by alpha-particle irradiation. (orig.)
Full Text Available Methodology of prognostication of thermodynamics properties of melts is presented from the coordinatesof liquidus of diagram of the state in area of equilibria a hard component is solution, on which energies ofmixing of Gibbs are expected in the double border systems of MgO – Al2O3, MgO – SiO2, MgO – CaF2,Al2O3 – SiO2, Al2O3 - CaF2, SiO2 - CaF2. For the areas of equilibrium there is quasibinary connection(MgAl2O4, Mg2SiO4, Al6Si2O13 – a grout at calculations was used equalization of Hauffe-Wagner. Theobtained data comport with literary
Lebedev, V. F.
An analysis was made of the conditions of existence of a two-component steady-state laser plume in atmospheric air. Such a plume is used in single-stage synthesis of bulk molten materials belonging to the SiO2 : MxOy system. Targets of the SiO2 : M type (metal foil and a silica glass rod) and doping elements with boiling points below and above the boiling point of silica glass are discussed. The regimes and efficiency of steady-state transfer of the dopants are considered. The efficiency of transfer of metal oxides during growth of samples with the aid of a cw CO2 laser is reported to be ~0.05, 0.4, and 0.75g min-1 kW-1 when the mass dopant concentration is ~8%, 20%, and 60% for the oxides of Ti, Cu, and Ni, respectively.
Wang, Siqi; Zhao, Naiqin; Shi, Chunsheng; Liu, Enzuo; He, Chunnian; He, Fang; Ma, Liying
Silica (SiO2) is regarded as one of the most promising anode materials for lithium ion batteries owing to its high theoretical specific capacity, relatively low operation potentials, abundance, environmental benignity and low cost. However, the low intrinsic electrical conductivity and large volume change of SiO2 during the discharge/charge cycles usually results in poor electrochemical performance. In this work, carbon nanotubes (CNTs) modified SiO2/C composites have been fabricated through an in-situ chemical vapor deposition method. The results show that the electrical conductivity of the SiO2/C/CNTs is visibly enhanced through a robust connection between the CNTs and SiO2/C particles. Compared with the pristine SiO2 and SiO2/C composites, the SiO2/C/CNTs composites display a high initial capacity of 1267.2 mA h g-1. Besides, an excellent cycling stability with the capacity of 315.7 mA h g-1 is achieved after 1000th cycles at a rate of 1 A g-1. The significantly improved electrochemical properties of the SiO2/C/CNTs composites are mainly attributed to the formation of three dimensional CNT networks in the SiO2/C substrate, which can not only shorten the Li-ion diffusion path but also relieve the volume change during the lithium-ion insertion/extraction processes.
Wu, Lian-Kui; Xia, Jie; Hou, Guang-Ya; Cao, Hua-Zhen; Tang, Yi-Ping; Zheng, Guo-Qu
Highlights: • MnO 2 -SiO 2 composite film is prepared by potentiodynamical deposition. • Hierarchical porous MnO 2 films is obtained after the etching of SiO 2 . • The obtained MnO 2 film electrode exhibit high specific capacitance. - Abstract: We report a novel silica co-electrodeposition route to prepare nanostructured MnO 2 films. Firstly, MnO 2 -SiO 2 composite film was fabricated on a stainless steel substrate by potentiodynamical deposition, i.e. cyclic deposition, and then the SiO 2 template was removed by simple immersion in concentrated alkaline solution, leading to the formation of a porous MnO 2 (po-MnO 2 ) matrix. The structure and morphology of the obtained films were characterized using Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The electrochemical properties of the po-MnO 2 film were evaluated by cyclic voltammetry (CV), galvanostatic charge–discharge (GCD) and electrochemical impedance spectroscopy (EIS). Results showed that this porous MnO 2 derived from the MnO 2 -SiO 2 composite film exhibits good electrochemical performance for potential use as a supercapacitor material.
Syamsi Aini; Jon Efendi; Syamsi Aini; Jon Efendi
This study highlights the potential use of Ti-Phenyl at SiO 2 core-shell nanoparticles as heterogeneous catalysis in oxidation reaction. The Ti-Phenyl at SiO 2 was synthesized by reduction of TiCl 4 and diazonium salt with sodium borohydride to produce phenyl titanium nanoparticles (Ti-Phenyl), followed by the silica shell coating using tetraethyl orthosilicate (TEOS). The Ti-Phenyl at SiO 2 nanoparticles were characterized by Fourier transform infrared (FTIR) spectrometer, diffuse reflectance (DR) UV-visible spectrometer, thermogravimetric analyzer (TGA), X-ray diffraction (XRD) spectrometer, field emission scanning electron microscope (FESEM) and transmission electron microscope (TEM). The core-shell size of Ti-Phenyl at SiO 2 was in the range of 40 to 100 nm with its core composed with an agglomeration of Ti-Phenyl. The Ti-Phenyl at SiO 2 was active as a catalyst in the liquid phase epoxidation of 1-octene with aqueous hydrogen peroxide as an oxidant. (author)
Full Text Available Physical and electrical properties of The SiO2-ZnO mixing at different compositions were investigated. The experiment used simple mixing method at the sintering temperature 600oC. It was used the composition mixing ratio of SiO2:ZnO ie. 0:10; 7:3; 5:5; 3:7; and 10:0 (%Wt. Based on X-Ray Diffraction (XRD results, it obtained that a new phase in each sample was not formed even though having different diffraction peak. The mixing ratio of SiO2: ZnO nanocomposite (7:3 %wt had the biggest grain size (77,92 nm, the highest dielectric constant (3.00E+05 and the smallest conductivity (0,726549 (Ωm-1. On the other side, the mixing ratio of SiO2: ZnO nanocomposite (5:5 %wt had the smallest grain size (35.42nm, dielectric constant (3.00E+2 and the highest conductivity (25.36729 (Ωm-1. It can be concluded that the difference of composition ratio offered the change on both physical and electrical properties of SiO2-ZnO nanocomposite.
Abel, Brett M.; Morgan, James M.; Mauro, John C.
. In the composition range of interest for industrial glasses, Tliq tends to decrease with increasing strontium-to-alumina ratio. We find that cristobalite, mullite, and slawsonite are the dominant devitrification phases for the compositions with high SiO2, SiO2+Al2O3, and SrO contents, respectively. By comparison...... with the phase diagrams for CaO-Al2O3-SiO2 and MgO-Al2O3-SiO2 systems, we have found that for the highest [RO]/[Al2O3] ratios, Tliq exhibits a minimum value for R = Ca. Based on the phase diagram established here, the composition of glass materials, for example, for liquid crystal display substrates, belonging...... to the SrO-Al2O3-SiO2 family may be designed with a more exact control of the glass-forming ability by avoiding the regions of high liquidus temperature....
Full Text Available In order to improve the Mg removal from an A-380 molten alloy, mixtures of zeolite and SiO2 nanoparticles (SiO2(NPs were tested. Zeolite was enriched with 2.5, 5, 7.5, 10, or 12.5 wt-% of amorphous SiO2(NPs. The SiO2(NPs and zeolite were mixed for 30 min in ethanol for each experiment and then dried in a furnace at 80°C for 12 h. The enriched zeolites were analyzed by scanning electron microscopy, transmission electron microscopy, and N2 gas adsorption analysis. The Mg removal was carried out injecting each mixture into the molten aluminum alloy at 750°C using argon. The Mg content of the molten alloy was measured after different periods of the injection time. Zeolites enriched with 2.5 and 5 wt-% of SiO2(NPs were demonstrated to be the better mixtures, removing Mg from an initial content of 1.6 to a final content of 0.0002 and 0.0101 wt-%, respectively, in 45 min of injection.
King, David M; Liang Xinhua; Weimer, Alan W; Burton, Beau B; Akhtar, M Kamal
Pigment-grade TiO 2 particles were passivated using nanothick insulating films fabricated by atomic layer deposition (ALD). Conformal SiO 2 and Al 2 O 3 layers were coated onto anatase and rutile powders in a fluidized bed reactor. SiO 2 films were deposited using tris-dimethylaminosilane (TDMAS) and H 2 O 2 at 500 deg. C. Trimethylaluminum and water were used as precursors for Al 2 O 3 ALD at 177 deg. C. The photocatalytic activity of anatase pigment-grade TiO 2 was decreased by 98% after the deposition of 2 nm SiO 2 films. H 2 SO 4 digest tests were performed to exhibit the pinhole-free nature of the coatings and the TiO 2 digest rate was 40 times faster for uncoated TiO 2 than SiO 2 coated over a 24 h period. Mass spectrometry was used to monitor reaction progress and allowed for dosing time optimization. These results demonstrate that the TDMAS-H 2 O 2 chemistry can deposit high quality, fully dense SiO 2 films on high radius of curvature substrates. Particle ALD is a viable passivation method for pigment-grade TiO 2 particles
Kachurin, G. A.; Cherkova, S. G.; Marin, D. V.; Kesler, V. G.; Volodin, V. A.; Skuratov, V. A.
Three hundred and twenty nanometer-thick SiO2 layers were thermally grown on the Si substrates. The layers were irradiated with 167 MeV Xe ions to the fluences ranging between 1012 cm-2 and 1014 cm-2, or with 700 MeV Bi ions in the fluence range of 3 × 1012-1 × 1013 cm-2. After irradiation the yellow-orange photoluminescence (PL) band appeared and grew with the ion fluences. In parallel optical absorption in the region of 950-1150 cm-1, Raman scattering and X-ray photoelectron spectroscopy evidenced a decrease in the number of Si-O bonds and an increase in the number of Si-coordinated atoms. The results obtained are interpreted as the formation of the light-emitting Si-enriched nanostructures inside the tracks of swift heavy ions through the disproportionation of SiO2. Ionization losses of the ions are regarded as responsible for the processes observed. Difference between the dependences of the PL intensity on the fluences of Xe and Bi ions are ascribed to their different stopping energy, therewith the diameters of the tracks of Xe and Bi ions were assessed as <3 nm and ˜10 nm, respectively. The observed shift of the PL bands, induced by Xe and Bi ions, agrees with the predictions of the quantum confinement theory.
Saxena, Nupur; Kumar, Pragati; Gupta, Vinay
Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO 2 matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO 2 is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters
Gonçalves Rogéria R.
Full Text Available Eu3+ doped bulk monoliths and thin films were obtained by sol-gel methods in the ZrO2, SiO2 and SiO2-TiO2 systems. Eu3+ 5D0 ® 7FJ emission and decay time characteristics were measured during the entire experimental preparation route from the initial sol to the final xerogels. The crystalline phases identified were tetragonal ZrO2 and mixtures of rutile and anatase TiO2 at high temperature treatments in bulk samples. Good quality thin films were obtained for all systems by dip-coating optical glasses (Schott BK270. The same spectroscopic features were observed either for the bulk monoliths or the films. By appropriate heat treatments under H2 atmosphere Eu2+ containing samples could be obtained in the SiO2-TiO2 system.
Yu, C.F.; Chao, D.S.; Chen, Y.-F.; Liang, J.H.
Prospects of developing into numerous silicon-based optoelectronic applications have prompted many studies on the optical properties of Ge nanoparticles within a silicon oxide (SiO 2 ) matrix. Even with such abundant studies, the fundamental mechanism underlying the Ge nanoparticle-induced photoluminescence (PL) is still an open question. In order to elucidate the mechanism, we dedicate this study to investigating the correlation between the PL properties and microstructure of the Ge nanoparticles synthesized in thermally grown SiO 2 films. Our spectral data show that the peak position, at ∼3.1 eV or 400 nm, of the PL band arising from the Ge nanoparticles was essentially unchanged under different Ge implantation fluences and the temperatures of the following annealing process, whereas the sample preparation parameters modified or even fluctuated (in the case of the annealing temperature) the peak intensity considerably. Given the microscopically observed correlation between the nanoparticle structure and the sample preparation parameters, this phenomenon is consistent with the mechanism in which the oxygen-deficiency-related defects in the Ge/SiO 2 interface act as the major luminescence centers; this mechanism also successfully explains the peak intensity fluctuation with the annealing temperature. Moreover, our FTIR data indicate the formation of GeO x upon ion implantation. Since decreasing of the oxygen-related defects by the GeO x formation is expected to be correlated with the annealing temperature, presence of the GeO x renders further experimental support to the oxygen defect mechanism. This understanding may assist the designing of the manufacturing process to optimize the Ge nanoparticle-based PL materials for different technological applications
Khosroshahi, Mohammad E.; Ghazanfari, Lida
Highlights: ► The purpose of the research was to synthesize and characterize Fe 3 O 4 /SiO 2 /Au NPs. ► Uncoated MNPs showed an Ms range of 80–100 emu g −1 for particles between 35–96 nm. ► The magnetic NPs were modified with a thin layer of silica using Stober method. ► Small gold colloids (1–3 nm) were covered the amino functionalized particle surface. ► An absorption peak of 550 nm was obtained for a gold thickness of about 35 nm. - Abstract: The purpose of this research was to synthesize and characterize gold-coated Fe 3 O 4 /SiO 2 nanoshells for biomedical applications. Magnetite nanoparticles (NPs) were prepared using co-precipitation method. Smaller particles were synthesized by decreasing the NaOH concentration, which in our case this corresponded to 35 nm using 0.9 M of NaOH at 750 rpm with a specific surface area of 41 m 2 g −1 . For uncoated Fe 3 O 4 NPs, the results showed an octahedral geometry with saturation magnetization range of 80–100 emu g −1 and coercivity of 80–120 Oe for particles between 35 and 96 nm, respectively. The magnetic NPs were modified with a thin layer of silica using Stober method. Small gold colloids (1–3 nm) were synthesized using Duff method and covered the amino functionalized particle surface. Magnetic and optical properties of gold nanoshells were assessed using Brunauer–Emmett–Teller (BET), vibrating sample magnetometer (VSM), UV–Vis spectrophotometer, atomic and magnetic force microscope (AFM, MFM), and transmission electron microscope (TEM). Based on the X-ray diffraction (XRD) results, three main peaks of Au (1 1 1), (2 0 0) and (2 2 0) were identified. The formation of each layer of a nanoshell is also demonstrated by Fourier transform infrared (FTIR) results. The Fe 3 O 4 /SiO 2 /Au nanostructures, with 85 nm as particle size, exhibited an absorption peak at ∼550 nm with a magnetization value of 1.3 emu g −1 with a specific surface area of 71 m 2 g −1 .
Full Text Available Using silica sol as a binder for titanium investment casting is very attractive due to its good stability and reasonable cost as compared with yttrium sol and zirconium sol. However, the mechanism of interface reaction in the related system remains unclear. In this investigation, the interface reaction between Y2O3-SiO2 (Y-Si shell mold and titanium alloys was studied. A group of shell molds were prepared by using Y2O3 sand and silica sol with different contents of SiO2. Ti-6Al-4V alloy was cast under vacuum by gravity casting through cold crucible induction melting (CCIM method. Scanning electron microscopy (SEM and energy dispersive x-ray spectroscopy (EDS were employed to characterize the micromorphology and composition of the reaction area, respectively. X-ray photoelectron spectroscopy (XPS was used to confirm the valence state of relevant elements. White light interferometer (WLI was used to obtain the surface topography of Y-Si shells. The results show that the thickness of reaction layers is below 3 μm when the SiO2 content of silica sol is below 20wt.%. Whereas, when the SiO2 content increases to 25wt.%, the thickness of the reaction layer increases sharply to about 15 μm. There is a good balance between chemical inertness and mechanical performance when the SiO2 content is between 15 and 20wt.%. Moreover, it was found that the distribution of SiO2 and the roughness at the surface of the shell are the key factors that determine the level of reaction.
Wang Hao; Yang, F.J.; Wang, H.B.; Cao, X.; Xue, S.X.; Wang, J.A.; Gao, Y.; Huang, Z.B.; Yang, C.P.; Chiah, M.F.; Cheung, W.Y.; Wong, S.P.; Li, Q.; Li, Z.Y.
FePt:Ag nanocomposite films were prepared by pulsed filtered vacuum arc deposition system and subsequent rapid thermal annealing on SiO 2 /Si(1 0 0) substrates. The microstructure and magnetic properties were investigated. A strong dependence of coercivity and ordering of the face-central tetragonal structure on both Ag concentration and annealing temperature was observed. With Ag concentration of 22% in atomic ratio, the coercivity got to 6.0 kOe with a grain size of 6.7 nm when annealing temperature was 400 deg. C
Full Text Available regardless of the incorporation of Pr3+ and nanocrystalline ZnO or annealing at 600 °C. The particles were mostly spherical and agglomerated as confirmed by Field Emission Scanning Electron Microscopy. Thermogravimetric analysis of dried gels performed... Science, vol. 45(19): 5228-5236 Cathodoluminescence properties of SiO2:Pr 3+and ZnO·SiO2:Pr 3+ phosphor nanopowders G. H. Mhlongo, O. M. Ntwaeaborwa, M. S. Dhlamini, H. C. Swart, K. T. Hillie ABSTRACT: The successful incorporation of Zn...
Yoshimura, Yusuke; Ono, Kanta; Fujioka, Hiroshi; Hayakawa, Shinjiro; Sato, Yoshiyuki; Uematsu, Masashi; Baba, Yuji; Hirose, Kazuyuki; Oshima, Masaharu
We have investigated the positions of the piled-up phosphorus atoms at the SiO 2 /Si interface using the extended X-ray absorption fine structure (EXAFS) and X-ray photoelectron spectroscopy (XPS). The EXAFS and XPS data can be well explained on the assumption that the piled-up arsenic atoms exist at the tetrahedral sites. On the contrary, phosphorus atoms exist not at the tetrahedral sites but at the denser sites. The depth profile measurements of XPS have revealed that the piled-up arsenic and phosphorus atoms exist within 20A from the interface. (author)
Youkuo Chen; Lei Wen; Lili Hu; Wei Chen; Y. Guyot; G. Boulon
Yb-Er codoped Na2O-Al2O3-P2Os-xSiO2 glasses containing 0 鈥? 20 mol% SiO2 were prepared successfully. The addition of SiO2 to the phosphate glass not only lengthens the bond between P5+ and non-bridging oxygen but also reduces the number of P=O bond. In contrast with silicate glass in which there is only four-fold coordinated Si4+, most probably there coexist [SiO4] tetrahedron and [SiO6] octahedron in our glasses. Within the range of 0 鈥? 20 mol% SiO2 addition, the stimulated emission cross-section of Er3+ ion only decreases no more than 10%. The Judd-Ofelt intensity parameters of Er3+, 惟.2 does not change greatly, but 惟74 and 惟6 decrease obviously with increasing SiO2 addition, because the bond between Er + and O2- is more strongly covalently bonded.
Kachurin, G.A.; Cherkova, S.G.; Marin, D.V.; Kesler, V.G.; Volodin, V.A.; Skuratov, V.A.
Three hundred and twenty nanometer-thick SiO 2 layers were thermally grown on the Si substrates. The layers were irradiated with 167 MeV Xe ions to the fluences ranging between 10 12 cm −2 and 10 14 cm −2 , or with 700 MeV Bi ions in the fluence range of 3 × 10 12 –1 × 10 13 cm −2 . After irradiation the yellow–orange photoluminescence (PL) band appeared and grew with the ion fluences. In parallel optical absorption in the region of 950–1150 cm −1 , Raman scattering and X-ray photoelectron spectroscopy evidenced a decrease in the number of Si–O bonds and an increase in the number of Si-coordinated atoms. The results obtained are interpreted as the formation of the light-emitting Si-enriched nanostructures inside the tracks of swift heavy ions through the disproportionation of SiO 2 . Ionization losses of the ions are regarded as responsible for the processes observed. Difference between the dependences of the PL intensity on the fluences of Xe and Bi ions are ascribed to their different stopping energy, therewith the diameters of the tracks of Xe and Bi ions were assessed as <3 nm and ∼10 nm, respectively. The observed shift of the PL bands, induced by Xe and Bi ions, agrees with the predictions of the quantum confinement theory.
Roumie, M.; Nsouli, B.
Phosphorus determination, at level of percent, in Si matrix is not an easy analytical task. The analyzed materials arc Borophosphosilicate glass which are an important component of silicon based semiconductor technology. It's a thin SiO2 layer (400 nm) doped with boron and phosphorus using, in general, CVD (Chemical Vapor Deposition) process, in order to improve its plasticity, and deposited onto Si substrate. Therefore, the mechanical behaviour of the CVD SiO2 (P, B) layer is very sensitive to the phosphorus concentration. In this work we explore the capability of FIXE (Particle Induced X-ray Emission) to monitor a rapid and accurate quantification of P which is usually very low in such materials (few percent of the thin CVD layer deposited onto a silicon substrate). A systematic study is undertaken using Proton (0.5-3 MeV energy) and helium (1-3 MeV energy) beams, different thickness of X-ray absorber (131 and 146 μm of Kapton filter) and different tilting angles (0,45,60 and 80 deg.). The optimized measurement conditions should improve the P signal detection comparing to the Si and Background ones
Muchlis, Khairanissa; Fauziyah, Nur Aini; Pratapa, Suminar; Soontaranon, Siriwat; Limpirat, Wanwisa
In this study, we have investigated polymorphic silica (SiO 2 ) powders using, Wide Angle X-ray Scattering (WAXS) and X-Ray Absorption Near Edge Spectroscopy (XANES), laboratory X-Ray Diffraction (XRD) instruments. The WAXS and XANES spectra were collected using synchrotron radiation at Synchrotron Light Research Institute (SLRI), Nakhon Ratchasima, Thailand. The silica powders were obtained by processing silica sand from Tanah Laut, South Kalimantan, Indonesia. Purification process of silica sand was done by magnetic separation and immersion with HCl. The purification step was needed to reduce impurity or undesirable non Si elements. Three polymorphs of silica were produced, i.e. amorphous phase (A), quartz (B), and cristobalite (C). WAXS profile for each phase was presented in terms of intensity vs. 2θ prior to analyses. Both XRD (λ CuKα =1.54056 Å) and WAXS (λ=1.09 Å) patttern show that (1) A sample contains no crystallites, (2) B sample is monophasic, contains only quartz, and (3) C sample contains cristobalite and trydimite. XRD quantitative analysis using Rietica gave 98,8 wt% cristobalite, while the associated WAXS data provided 98.7 wt% cristobalite. Si K-edge XANES spectra were measured at energy range 1840 to 1920 eV. Qualitatively, the pre-edge and edge features for all phases are similar, but their main peaks in the post-edge region are different. (paper)
Walder, Cordula; Zellmeier, Matthias; Rappich, Jörg; Ketelsen, Helge; Hinrichs, Karsten
For the design and process control of periodic nano-structured surfaces spectroscopic ellipsometry is already established in the UV-VIS spectral regime. The objective of this work is to show the feasibility of spectroscopic ellipsometry in the infrared, exemplarily, on micrometer-sized SiO2 line gratings grown on silicon wafers. The grating period ranges from 10 to about 34 μm. The IR-ellipsometric spectra of the gratings exhibit complex changes with structure variations. Especially in the spectral range of the oxide stretching modes, the presence of a Rayleigh singularity can lead to pronounced changes of the spectrum with the sample geometry. The IR-ellipsometric spectra of the gratings are well reproducible by calculations with the RCWA method (Rigorous Coupled Wave Analysis). Therefore, infrared spectroscopic ellipsometry allows the quantitative characterization and process control of micrometer-sized structures.
Bonilla, Ruy S.; Wilshaw, Peter R.
This manuscript reports an experimental and theoretical study of the transport of potassium ions in thin silicon dioxide films. While alkali contamination was largely researched in the context of MOSFET instability, recent reports indicate that potassium ions can be embedded into oxide films to produce dielectric materials with permanent electric charge, also known as electrets. These electrets are integral to a number of applications, including the passivation of silicon surfaces for optoelectronic devices. In this work, electric field assisted migration of ions is used to rapidly drive K+ into SiO2 and produce effective passivation of silicon surfaces. Charge concentrations of up to ~5 × 1012 e cm-2 have been achieved. This charge was seen to be stable for over 1500 d, with decay time constants as high as 17 000 d, producing an effectively passivated oxide-silicon interface with SRV industrial manufacture of silicon optoelectronic devices.
Kabadayi, Oe.; Guemues, H.
The heavy ion ranges in amorphous SiO 2 have been calculated by using a technique based on solution of first order ODE's. Br, Au, Hg, Bi projectiles have been chosen as incident ions. Since the target is assumed to be amorphous, Bragg's rule can be used to calculate electronic and nuclear stopping powers in the compound. Numerical solutions have ben performed by using Fuhlberg fourth-fifth order Runge-Kutta method. The results are compared with experimental data, as well as with the result of Monte Carlo program SRIM and other standard procedures such as PRAL and WS. It is found that the agreement between our method and the experiment is good and within 10%. (author)
Nakagawa, M.; Okada, M.; Kawabata, Y.; Atobe, K.; Itoh, H.; Nakanishi, S.
The synthetic silicon dioxide (SiO 2 ), cut parallel (x-plate) or perpendicular (z-plate) to c-axis, are irradiated by reactor neutrons at 360 K (2.8x10 18 n/cm 2 ) or at 20 K (8.0x10 16 n/cm 2 ). After neutron irradiation at 360 K, the main absorption peak can be observed at 212 nm (5.84 eV) for z-plate and 217 nm (5.71 eV) for x-plate. After irradiation at 20 K a new band at 250 nm (4.96 eV) can be observed in addition to the band at about 220 nm. The 250 nm band having FWHM similar 0.44 eV disappears at 300-340 K. Thermoluminescences are also observed between 80 to 400 K; which show some difference between x-plate and z-plate. ((orig.))
Full Text Available In this paper, we studied the optical behavior of SiO2 thin films prepared via sol-gel route using spin coating deposition from tetraethylorthosilicate (TEOS as precursor. Thin films were annealed at different temperatures (400-600oC. Absorption edge and band gap of thin layers were measured using UV-Vis spectrophotometery. Optical refractive index and dielectric constant were measured by ellipsometry technique. Based on our atomic force microscopic (AFM and ellipsometry results, thin layers prepared through this method showed high surface area, and high porosity ranging between 4.9 and 16.9, low density 2 g/cm, and low dielectric constant. The dielectric constant and porosity of layers increased by increasing the temperature due to the changes in surface roughness and particle size.
Zheng, Fan; Park, Byoung-Nam; Seo, Soonjoo; Evans, Paul G.; Himpsel, F. J.
Near edge x-ray absorption fine structure (NEXAFS) spectroscopy is used to study the orientation of pentacene molecules within thin films on SiO 2 for thicknesses ranging from monolayers to the bulk (150 nm). The spectra exhibit a strong polarization dependence of the π * orbitals for all films, which indicates that the pentacene molecules are highly oriented. At all film thicknesses the orientation varies with the rate at which pentacene molecules are deposited, with faster rates favoring a thin film phase with different tilt angles and slower rates leading to a more bulklike orientation. Our NEXAFS results extend previous structural observations to the monolayer regime and to lower deposition rates. The NEXAFS results match crystallographic data if a finite distribution of the molecular orientations is included. Damage to the molecules by hot electrons from soft x-ray irradiation eliminates the splitting between nonequivalent π * orbitals, indicating a breakup of the pentacene molecule
Ghislotti, G.; Nielsen, B.; Asoka-Kumar, P.; Lynn, K.G.; Di Mauro, L.F.; Bottani, C.E.; Corni, F.; Tonini, R.; Ottaviani, G.P.
Silicon implanted and annealed SiO 2 layers are studied using photoluminescence (PL) and positron annihilation spectroscopy (PAS). Two PL emission bands are observed. A band centered at 560 nm is present in as-implanted samples and it is still observed after 1,000 C annealing. The emission time is fast. A second band centered at 780 nm is detected after 1,000 C annealing. The intensity of the 780 nm band further increased when hydrogen annealing was performed. The emission time is long (1 micros to 0.2 ms). PAS results show that defects produced by implantation anneal at 600 C. Based on the annealing behavior and on the emission times, the origin of the two bands is discussed
Zhang Chunlai; Wang Biyi; Tian Dongbin; Yin Wei; Jiang Xiaodong; Yuan Xiaodong; Yan Lianghong; Zhang Hongliang; Zhao Songnan; Lv Haibing
SiO 2 thin films were deposited using tetraethoxylsilane as precursor, ammonia as catalyst on K9 glass by sol-gel method. These films were post-treated by ammonia and heat. The properties of the coatings were characterized by ellipsometer, UV-vis spectrophotometry, FTIR-spectroscopy, scanning probe microscope and contact angle measurement apparatus. The resuits indicate that the thickness of the films with ammonia and heat treatment tend to decrease. Both the refractive index and water contact angle increase after ammonia treatment. However, they both decrease after heat treatment. The former increases by 0.236 for the first step, then decreases by 0.202 for the second. The latter increases to 58.92 degree, then decreases to 38.07 degree. The transmittance of the coatings turn to be better and continuously shift to short wave by UV-vis spectrophotometry. The surface becomes smoother by AFM after the two-step treatment. (authors)
Szydlo, N.; Poirier, R.
Metal-oxide-semiconductor capacitors were studied where the metal is a semitransparent gold layer of 5mm diameter, the oxide is thermal silica whose, thickness depends on the nature of the implant, and the semiconductor is N-type silicon of 5 ohms/cm. The SiO 2 thickness was chosen in such a way that the maximum of the profile of the implanted substance is in the medium of the oxide layer. In the case of virgin silica, the oscillations in the photocurrent versus energy and exponential variations versus the applied voltage show that the photoconduction obeys the model of injection limited current. In the case of the oxide after ion bombardment, the photocurrent similarity, independent of the direction of the electric field in silica, shows that volume transport phenomena become preponderent [fr
Dingemans, G.; Helvoirt, van C.A.A.; Pierreux, D.; Keuning, W.; Kessels, W.M.M.
Plasma-assisted atomic layer deposition (ALD) was used to deposit SiO2 films in the temperature range of Tdep = 50–400°C on Si(100). H2Si[N(C2H5)2]2 and an O2 plasma were used as Si precursor and oxidant, respectively. The ALD growth process and material properties were characterized in detail.
Kline, J.E.; Leonard, J.P.
Pulsed excimer laser irradiation has been used to fully melt 200 nm films of elemental Au and Ni on SiO 2 substrates. With the use of a capping layer of SiO 2 and line irradiation via projection optics, the typical liquid-phase dewetting processes associated with these metals on SiO 2 has been suppressed. In a series of experiments varying line widths and fluence, a process region is revealed immediately above the complete melting threshold for which the films remain continuous and smooth after melting and resolidification. Simple energetic arguments for mechanisms leading to initiation of dewetting support these observations, and a gas-mediated model is proposed to describe the process conditions that are necessary for the suppression of dewetting
Ammosova, Lena; Ankudze, Bright; Philip, Anish; Jiang, Yu; Pakkanen, Tuula T.; Pakkanen, Tapani A.
Common methods to fabricate surface enhanced Raman scattering (SERS) substrates with controlled micro-nanohierarchy are often complex and expensive. In this study, we demonstrate a simple and cost effective method to fabricate SERS substrates with complex geometries. Microworking robot structuration is used to pattern a polypropylene (PP) substrate with micropits, facilitating protective microenvironment for brittle SiO2 inverse opal (IO) structure. Hierarchical SiO2 IO patterns were obtained using polystyrene (PS) spheres as a sacrificial template, and were selectively embedded into the hydrophilized PP micropits. The same microworking robot technique was subsequently used to deposit silver nanoparticle ink into the SiO2 IO cavities. The fabricated multi-level micro-nanohierarchy surface was studied to enhance Raman scattering of the 4-aminothiophenol (4-ATP) analyte molecule. The results show that the SERS performance of the micro-nanohierarchical substrate increases significantly the Raman scattering intensity compared to substrates with structured 2D surface geometries.
Saraf, Laxmikant V
Electrically and thermally isolated surfaces are crucial for improving the detection sensitivity of microelectronic sensors. The site-specific in situ growth of Pt nano-rods on thermally and electrically isolated SiO 2 micro-disks using wet chemical etching and a focused ion/electron dual beam (FIB-SEM) is demonstrated. Fabrication of an array of micro-cavities on top of a micro-disk is also demonstrated. The FIB source is utilized to fabricate through-holes in the micro-disks. Due to the amorphous nature of SiO 2 micro-disks, the Ga implantation possibly modifies through-hole sidewall surface chemistry rather than affecting its transport properties. Some sensor design concepts based on micro-fabrication of SiO 2 micro-disks utilizing thermally and electrically isolated surfaces are discussed from the viewpoint of applications in photonics and bio-sensing.
Jia, Weiyi; Castro, Lymari; Wang, Yanyun; Liu, Huimin
Chromium ions are very attractive to optical spectroscopy and laser physics. It is well known that the first laser in the history is a ruby laser activated with Cr(3+). It was found in early nineties that Cr(4+) was also an interesting lasing ion in the near infrared, and various Cr(4+) lasers have been developed. Very recently, it was reported that Cr(2+) doped in CdSe crystals showed lasing action in the infrared. The above achievement have stimulated an interest in searching for Cr(5+) and investigating its optical properties. Cr(5+) is isoelectronic with Ti(3+) and V(4+), having electron configuration 3d1. Ti(3+) is the active center of commercial cw and femtosecond sapphire lasers, tunable in the range 680-1100 nm. V(4+) doped in YAlO3 and Al2O3 showed broad band emission near 635 nm. Although EPR results of Cr(5+) were reported, the optical properties were less studied. Herren et al. reported an observation of luminescence from Cr doped in SiO2 sol-gel glass. The luminescence spectrum was assigned to pentavalent ions in their first paper, and later it was identified to be the emission from the charge transfer transition of Cr(6+). The first observation of photoluminescence from octahedrally coordinated Cr(5+) in BaCaMg aluminate glasses was reported very recently. In this work, we report luminescence results of Cr doped SiO2 sol-gel glasses. The fluorescence spectra are very different from Herrens' results, and we believe it originates from pentavalent Cr.
Yang Yuling; Serpersu, Kaan; He Wei; Paital, Sameer R.; Dahotre, Narendra B.
In order to improve the bioactivity and biocompatibility of titanium endosseous implants, the morphology and composition of the surfaces were modified. Polished Ti-6Al-4V substrates were coated by a laser cladding process with different precursors: 100 wt.% HA and 25 wt.% SiO 2 -HA. X-ray diffraction of the laser processed samples showed the presence of CaTiO 3 , Ca 3 (PO 4 ) 2 , and Ca 2 SiO 4 phases within the coatings. From in vitro studies, it was observed that compared to the unmodified substrate all laser cladded samples presented improved cellular interactions and bioactivity. The samples processed with 25 wt.% SiO 2 -HA precursor showed a significantly higher HA precipitation after immersion in simulated body fluid than 100 wt.% HA precursor and titanium substrates. The in vitro biocompatibility of the laser cladded coatings and titanium substrate was investigated by culturing of mouse MC3T3-E1 pre-osteoblast cell line and analyzing the cell viability, cell proliferation, and cell morphology. A significantly higher cell attachment and proliferation rate were observed for both laser cladded 100 wt.% HA and 25 wt.% SiO 2 -HA samples. Compared to 100 wt.% HA sample, 25 wt.% SiO 2 -HA samples presented a slightly improved cellular interaction due to the addition of SiO 2 . The staining of the actin filaments showed that the laser cladded samples induced a normal cytoskeleton and well-developed focal adhesion contacts. Scanning electron microscopic image of the cell cultured samples revealed better cell attachment and spreading for 25 wt.% SiO 2 -HA and 100 wt.% HA coatings than titanium substrate. These results suggest that the laser cladding process improves the bioactivity and biocompatibility of titanium. The observed biological improvements are mainly due to the coating induced changes in surface chemistry and surface morphology. Highlights: → Laser cladding of Ti alloys with bioceramics creates new phases. → Laser cladded samples with SiO 2 -doped
Wahyuni, S.; Prasetya, A. T.
The aim of this research is to develop nanomaterials for coating applications. This research studied the effect of various TiO2-SiO2 composites in acrylic paint to enhance the hydrophobic properties of the substrate. Titanium dioxide containing silica in the range 20-35 mol% has been synthesized using sol-gel route. The XRD’s spectra show that increasing SiO2 content in the composite, decreasing its crystalline properties but increasing the surface area. TiO2-SiO2 composite was dispersed in acrylic paint in 2% composition by weight. The largest contact angle was 70, which produced by the substrate coated with TS-35-modified acrylic paint. This study also investigated the enhanced photo-activity of TiO2-SiO2 modified with poly-aniline. The XRD spectra show that the treatment does not change the crystal structure of TiO2. The photo-activity of the composite was evaluated by degradation of Rhodamine-B with visible light. The best performance of the degradation process was handled by the composite treated with 0.1mL anilines per gram of TiO2-SiO2 composite (TSP-A). On the other side, the contact angle 70 has not shown an excellent hydrophobic activity. However, the AFM spectra showed that nanoroughness has started to form on the surface of acrylic paint modified with TiO2-SiO2 than acrylic alone.
Prachachet, R.; Samransuksamer, B.; Horprathum, M.; Eiamchai, P.; Limwichean, S.; Chananonnawathorn, C.; Lertvanithphol, T.; Muthitamongkol, P.; Boonruang, S.; Buranasiri, P.
Fabricated omnidirectional anti-reflection nanostructure films as a one of the promising alternative solar cell applications have attracted enormous scientific and industrial research benefits to their broadband, effective over a wide range of incident angles, lithography-free and high-throughput process. Recently, the nanostructure SiO2 film was the most inclusive study on anti-reflection with omnidirectional and broadband characteristics. In this work, the three-dimensional silicon dioxide (SiO2) nanostructured thin film with different morphologies including vertical align, slant, spiral and thin films were fabricated by electron beam evaporation with glancing angle deposition (GLAD) on the glass slide and silicon wafer substrate. The morphological of the prepared samples were characterized by field-emission scanning electron microscope (FE-SEM) and high-resolution transmission electron microscope (HRTEM). The transmission, omnidirectional and birefringence property of the nanostructure SiO2 films were investigated by UV-Vis-NIR spectrophotometer and variable angle spectroscopic ellipsometer (VASE). The spectrophotometer measurement was performed at normal incident angle and a full spectral range of 200 - 2000 nm. The angle dependent transmission measurements were investigated by rotating the specimen, with incidence angle defined relative to the surface normal of the prepared samples. This study demonstrates that the obtained SiO2 nanostructure film coated on glass slide substrate exhibits a higher transmission was 93% at normal incident angle. In addition, transmission measurement in visible wavelength and wide incident angles -80 to 80 were increased in comparison with the SiO2 thin film and glass slide substrate due to the transition in the refractive index profile from air to the nanostructure layer that improve the antireflection characteristics. The results clearly showed the enhanced omnidirectional and broadband characteristic of the three dimensional Si
Lee, Hong Seok; Rastelli, Armando; Schmidt, Oliver G.; Kim, Tae Whan; Lee, In Won
Micro-photoluminescence (μ-PL) measurements are carried out to investigate the effects of SiO 2 encapsulation and laser processing of single CdTe/ZnTe quantum dots (QDs) grown on Si (001) substrates by using molecular beam epitaxy and atomic layer epitaxy. After laser processing, the μ-PL peak shift for the 200-nm SiO 2 capped single QD is larger than that of the as-grown sample. The large μ-PL peak shift in the 200-nm SiO 2 capped sample is related to the compressive stress induced by the ZnTe cap layer during laser processing. These results indicate that SiO 2 encapsulation and laser processing represent effective methods for achieving local wavelength tuning in single QDs.
Jin, Lei; Li, Peizhong; Zhou, Haibin; Zhang, Wei; Zhou, Guodong; Wang, Chun
In this paper, air plasmas spray (APS) was used to prepare YSZ and Sc2O3–YSZ (ScYSZ) coating in order to improve the thermal insulation ability of TC4 alloy. SiO2 aerogel was also synthesized and affixed on TC4 titanium alloy to inhabit thermal flow. The microstructures, phase compositions and thermal insulation performance of three coatings were analyzed in detail. The results of thermal diffusivity test by a laser flash method showed that the thermal diffusivities of YSZ, Sc2O3–YSZ and SiO2...
Volkmann, U.G.; Pino, M.; Altamirano, L.A.
-crystal substrates. Our results suggest a model of a solid dotriacontane film that has a phase closest to the SiO2 surface in which the long-axis of the molecules is oriented parallel to the interface. Above this "parallel film" phase, a solid monolayer adsorbs in which the molecules are oriented perpendicular...... at higher coverages. In addition, we have performed high-resolution ellipsometry and stray-light measurements on dotriacontane films deposited from solution onto highly oriented pyrolytic graphite substrates. After film deposition, these substrates proved to be less stable in air than SiO2....
Abdullaev, G.B.; Bakirov, M.Ya; Akhmedov, G.M.; Safarov, N.A.; Safarova, F.D.
The process of radiation defects production in enlightened SiO 2 layers coated on silicon solar cells was studied. During irradiation the silicon solar cells with enlightened layers radiation defects are formed both in silicon and SiO 2 thus making worse photo energetic parameters of cells. For investigation of radiation effects formed under irradiation by electrons with 5 MeV energy and cobalt-60 gamma-rays photoluminescence, absorption spectra and electron spin resonance methods were used. It is supposed that main radiation defects in silicon dioxide are E'-centers and oxygen vacancies. (A.D. Avezov). 10 refs.; 2 figs
Wang, Wei; Nallathamby, Prakash D.; Foster, Carmen M.; Morrell-Falvey, Jennifer L.; Mortensen, Ninell P.; Doktycz, Mitchel J.; Gu, Baohua; Retterer, Scott T.
A new synthesis approach is described that allows the direct incorporation of fluorescent labels into the volume or body of SiO2 nanoparticles. In this process, fluorescent Alexa Fluor dyes with different emission wavelengths were covalently incorporated into the SiO2 nanoparticles during their formation by the hydrolysis of tetraethoxysilane. The dye molecules were homogeneously distributed throughout the SiO2 nanoparticles. The quantum yields of the Alexa Fluor volume-labeled SiO2 nanoparticles were much higher than nanoparticles labeled using conventional organic dyes. The size of the resulting nanoparticles was controlled using microemulsion reaction media with sizes in the range of 20-100 nm and a polydispersity of cultured macrophages. Differences in particle agglomeration and cell association were clearly associated with differences in observed nanoparticle toxicity. The capacity to maintain particle fluorescence while making significant changes to surface chemistry makes these particles extremely versatile and useful for studies of particle agglomeration, uptake, and transport in environmental and biological systems.A new synthesis approach is described that allows the direct incorporation of fluorescent labels into the volume or body of SiO2 nanoparticles. In this process, fluorescent Alexa Fluor dyes with different emission wavelengths were covalently incorporated into the SiO2 nanoparticles during their formation by the hydrolysis of tetraethoxysilane. The dye molecules were homogeneously distributed throughout the SiO2 nanoparticles. The quantum yields of the Alexa Fluor volume-labeled SiO2 nanoparticles were much higher than nanoparticles labeled using conventional organic dyes. The size of the resulting nanoparticles was controlled using microemulsion reaction media with sizes in the range of 20-100 nm and a polydispersity of cultured macrophages. Differences in particle agglomeration and cell association were clearly associated with differences in
Kling, A.; Ortiz, M.I.; Sangrador, J.; Rodriguez, A.; Rodriguez, T.; Ballesteros, C.; Soares, J.C.
Grazing incidence RBS has been tested as a technique to detect and characterize SiGe nanoparticles embedded in a SiO 2 matrix. Suitable structures were deposited by low pressure chemical vapour deposition and characterized by TEM and RBS. The layers containing nanoparticles have been modelled by stacks of sublayers consisting of SiGeO layers with compositions calculated according to presumed shapes, sizes, Si/Ge ratios and particle area densities and used as input for RUMP. The nanoparticle parameters obtained by fitting the experimental RBS spectra agree well with the findings by TEM. This demonstrates that RBS is a useful and fast technique to characterize this kind of structures
Tomar, Monika; Gupta, Vinay; Mansingh, Abhai; Sreenivas, K.
Theoretical calculations have been performed for the temperature stability of the c-axis oriented LiNbO 3 thin film layered structures on passivated silicon (SiO 2 /Si) substrate with and without a non-piezoelectric SiO 2 overlayer. The phase velocity, electromechanical coupling coefficient and temperature coefficient of delay (TCD) have been calculated. The thicknesses of various layers have been determined for optimum SAW performance with zero TCD. The presence of a non-piezoelectric SiO 2 overlayer on LiNbO 3 film is found to significantly enhance the coupling coefficient. The optimized results reveal that a high coupling coefficient of K 2 =3.45% and a zero TCD can be obtained in the SiO 2 /LiNbO 3 /SiO 2 /Si structure with a 0.235λ thick LiNbO 3 layer sandwiched between 0.1λ thick SiO 2 layers. (author)
Lee, Kuan-Wei; Huang, Jung-Sheng; Lu, Yu-Lin; Lee, Fang-Ming; Lin, Hsien-Cheng; Huang, Jian-Jun; Wang, Yeong-Her
The silicon dioxide (SiO 2 ) on AlGaAs prepared by liquid phase deposition (LPD) at 40 °C has been explored. The LPD-SiO 2 film deposition rate is about 67 nm h −1 for the first hour. The leakage current density is about 1.21 × 10 −6 A cm −2 at 1 MV cm −1 . The interface trap density (D it ) and the flat-band voltage shift (ΔV FB ) are 1.28 × 10 12 cm −2 eV −1 and 0.5 V, respectively. After rapid thermal annealing in the N 2 ambient at 300 °C for 1 min, the leakage current density, D it , and ΔV FB can be improved to 4.24 × 10 −7 A cm −2 at 1 MV cm −1 , 1.7 × 10 11 cm −2 eV −1 , and 0.2 V, respectively. Finally, this study demonstrates the application of the LPD-SiO 2 film to the AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor
Larsen, P.H.; Poulsen, F.W.; Berg, Rolf W.
2MgO-Al2O3-3.3P2O5 glasses with increasing amounts of SiO2 are considered for sealing applications in Solid Oxide Fuel Cells (SOFC). The change in chemical durability under SOFC anode conditions and the linear thermal expansion is measured as functions of the SiO2 concentration. Raman spectroscopy...... analysis of the glasses reveals no sign of important changes in the glass structure upon SiO2 addition. Some increase in glass durability with SiO2 concentration is reported and its cause is discussed....
Hocevar, Moiera; Regreny, Philippe; Descamps, Armel; Albertini, David; Saint-Girons, Guillaume; Souifi, Abdelkader; Gendry, Michel; Patriarche, Gilles
We studied a memory structure based on InAs nanocrystals grown by molecular beam epitaxy directly on thermal SiO 2 on silicon. Both nanocrystal diameter and density can be controlled by growth parameters. Transmission electron microscopy analysis shows high crystallinity and low size dispersion. In an electrical test structure with a 3.5 nm tunnel oxide, we observed that 80% of the initial injected electrons remain stored in the InAs nanocrystals after 3 months and that the retention time for electrons in InAs nanocrystals is four orders of magnitude higher than in silicon nanocrystals
Favors, Zachary; Bay, Hamed Hosseini; Mutlu, Zafer; Ahmed, Kazi; Ionescu, Robert; Ye, Rachel; Ozkan, Mihrimah; Ozkan, Cengiz S
The need for more energy dense and scalable Li-ion battery electrodes has become increasingly pressing with the ushering in of more powerful portable electronics and electric vehicles (EVs) requiring substantially longer range capabilities. Herein, we report on the first synthesis of nano-silicon paper electrodes synthesized via magnesiothermic reduction of electrospun SiO2 nanofiber paper produced by an in situ acid catalyzed polymerization of tetraethyl orthosilicate (TEOS) in-flight. Free-standing carbon-coated Si nanofiber binderless electrodes produce a capacity of 802 mAh g(-1) after 659 cycles with a Coulombic efficiency of 99.9%, which outperforms conventionally used slurry-prepared graphite anodes by over two times on an active material basis. Silicon nanofiber paper anodes offer a completely binder-free and Cu current collector-free approach to electrode fabrication with a silicon weight percent in excess of 80%. The absence of conductive powder additives, metallic current collectors, and polymer binders in addition to the high weight percent silicon all contribute to significantly increasing capacity at the cell level.
Truyen, Nguyen Xuan; Taoka, Noriyuki; Ohta, Akio; Makihara, Katsunori; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Shimizu, Mitsuaki; Miyazaki, Seiichi
The effects of postdeposition annealing (PDA) on the interface properties of a SiO2/GaN structure formed by remote oxygen plasma-enhanced chemical vapor deposition (RP-CVD) were systematically investigated. X-ray photoelectron spectroscopy clarified that PDA in the temperature range from 600 to 800 °C has almost no effects on the chemical bonding features at the SiO2/GaN interface, and that positive charges exist at the interface, the density of which can be reduced by PDA at 800 °C. The capacitance-voltage (C-V) and current density-SiO2 electric field characteristics of the GaN MOS capacitors also confirmed the reduction in interface state density (D it) and the improvement in the breakdown property of the SiO2 film after PDA at 800 °C. Consequently, a high thermal stability of the SiO2/GaN structure with a low fixed charge density and a low D it formed by RP-CVD was demonstrated. This is quite informative for realizing highly robust GaN power devices.
Full Text Available Green-emitting ZnO nanoparticles were successfully embedded in Pr3+-doped SiO2 by a sol–gel method resulting in a red-emitting ZnO·SiO2:Pr3+ nanocomposite phosphor. The particle morphology and luminescent properties of SiO2:Pr3+ phosphor powders...
Eko Sri Kunarti
Full Text Available ABSTRAK Pada penelitian ini telah dilakukan pengujian aktivitas komposit Fe2O3-SiO2 sebagai fotokatalis pada fotodegradasi 4-klorofenol. Penelitian diawali dengan preparasi dan karakterisasi fotokatalis Fe2O3-SiO2. Preparasi dilakukan dengan metode sol-gel pada temperatur kamar menggunakan tetraetil ortosilikat (TEOS dan besi (III nitrat sebagai prekursor diikuti dengan perlakuan termal pada temperature 500 oC. Karakterisasi dilakukan dengan metode spektrometri inframerah, difraksi sinar-X dan spektrometri fluoresensi sinar-X. Uji aktivitas komposit untuk fotodegradasi 4-klorofenol dilakukan dalam reaktor tertutup yang dilengkapi dengan lampu UV. Pada uji ini telah dipelajari pengaruh waktu penyinaran dan pH larutan terhadap efektivitas fotodegradasi 4-klorofenol. Hasil penelitian menunjukkan bahwa komposit Fe2O3-SiO2 dapat dipreparasi dengan metode sol-gel pada temperatur kamar diikuti perlakuan termal. Komposit Fe2O3-SiO2 dapat meningkatkan efektivitas fotodegradasi 4-klorofenol dari 11,86 % menjadi 55,38 %. Efektivitas fotodegradasi 4- klorofenol dipengaruhi waktu penyinaran dan pH larutan yang semakin lama waktu penyinaran efektifitas fotodegradasi semakin tinggi, namun waktu penyinaran yang lebih lama dari 4 jam dapat menurunkan efektivitasnya. pH larutan memberikan pengaruh yang berbeda-beda pada efektivitas fotodegradasi 4-klorofenol. ABSTRACT The activity test of Fe2O3-SiO2 composite as photocatalyst on 4-chlorophenol photodegradation has been studied. The research was initiated by preparation of Fe2O3-SiO2 photocatalyst and followed by characterization. The preparation was conducted by sol-gel method at room temperature using tetraethylorthosilicate (TEOS and iron (III nitrate as precursors followed by thermal treatment at a temperature of 500oC. The characterizations were performed by X-ray Diffraction (XRD, Infrared and X-ray Fluorescence Spectrophotometry. The photocatalytic activity test of composites for 4 chlorophenol
Full Text Available Lešnica river deposits consist of a large number of minerals of different grain sizes including sphene. Since it is very difficult to obtain pure monophase titanite by different synthetic routes (sol-gel, coprecipitation, combustion, spray pyrolysis and hydrothermal method, the aim of this work was to study the structure of the sphene from the Lešnica river deposits and possibility of using it as a natural precursor for CaO-TiO2-SiO2 based ceramics. The sphene from Lešnica was analyzed by different methods: tristimulus colorimetry, infrared spectroscopy, electron microprobe and X-ray single crystal diffraction. It was confirmed that Al, Fe, Mn and P are present in the sphene structure and proposed that corresponding structural formula could be: (Ca2+1.008 Mn2+0.0021.010(Ti4+0.901 Fe3+0.033 Al3+0.060 P5+0.0010.995 Si4+1.024 O2-5.
Moshe, Ruth; Berner, Alex; Kaplan, Wayne D.
The solubility limit of Si in α-alumina was measured using wavelength-dispersive spectroscopy on a scanning electron microscope. Samples were doped with Si such that the equilibrated material would contain two phases: mullite (3Al 2 O 3 ·2SiO 2 ) and alumina saturated with Si. Thus the amount of Si measured in the alumina grains represents the solubility limit. Measurements were conducted on water-quenched and furnace-cooled samples. For the quenched samples the Si solubility limit in Al 2 O 3 was found to be 188 ± 7 ppm at 1600 °C
Li, Shi-Kuo; Hou, Xiao-Cheng; Huang, Fang-Zhi; Li, Chuan-Hao; Kang, Wen-Juan; Xie, An-Jian; Shen, Yu-Hua
In this paper, we reported a simple and efficient protocol for preparation of Cu2+-modified magnetic Fe3O4@SiO2 core/shell microspheres for immobilization of cellulase. The uniform magnetic Fe3O4@SiO2 core/shell microspheres with a thin shell of 20 nm were synthesized through a solvothermal method followed by a sol-gel process. An amino-terminated silane coupling agent of (3-aminopropyl)triethoxysilane (APTS) was then grafted on them for capturing Cu2+ ions. The reaction process is very simple, efficient, and economical. Noticeably, the content of Cu2+ ions on the magnetic core/shell microspheres can reach 4.6 Wt%, endowing them possess as high immobilization capacity as 225.5 mg/g for cellulase. And the immobilized cellulase can be retained over 90 % on the magnetic microspheres after six cycles. Meanwhile, the magnetic microspheres decorated with Cu2+ ions show a superparamagnetic character with a high magnetic saturation of 58.5 emu/g at room temperature, suggesting conveniently and rapidly recycle the enzyme from solution. This facile, recyclable, high immobilization capacity and activity strategy may find potential applications in enzyme catalytic reactions with low cost.
Li, Shi-Kuo; Hou, Xiao-Cheng; Huang, Fang-Zhi; Li, Chuan-Hao; Kang, Wen-Juan; Xie, An-Jian; Shen, Yu-Hua
In this paper, we reported a simple and efficient protocol for preparation of Cu 2+ -modified magnetic Fe 3 O 4 @SiO 2 core/shell microspheres for immobilization of cellulase. The uniform magnetic Fe 3 O 4 @SiO 2 core/shell microspheres with a thin shell of 20 nm were synthesized through a solvothermal method followed by a sol–gel process. An amino-terminated silane coupling agent of (3-aminopropyl)triethoxysilane (APTS) was then grafted on them for capturing Cu 2+ ions. The reaction process is very simple, efficient, and economical. Noticeably, the content of Cu 2+ ions on the magnetic core/shell microspheres can reach 4.6 Wt%, endowing them possess as high immobilization capacity as 225.5 mg/g for cellulase. And the immobilized cellulase can be retained over 90 % on the magnetic microspheres after six cycles. Meanwhile, the magnetic microspheres decorated with Cu 2+ ions show a superparamagnetic character with a high magnetic saturation of 58.5 emu/g at room temperature, suggesting conveniently and rapidly recycle the enzyme from solution. This facile, recyclable, high immobilization capacity and activity strategy may find potential applications in enzyme catalytic reactions with low cost
Abe, Yasuhiro; Miyata, Noriyuki; Suzuki, Haruhiko; Kitamura, Koji; Igarashi, Satoru; Nohira, Hiroshi; Ikenaga, Eiji
We examined the effects of interfacial SiO 2 layers and a surface metal layer on the photoelectron spectra of HfO 2 /SiO 2 /Si structures by hard X-ray photoemission spectroscopy with synchrotron radiation as well as conventional X-ray photoelectron spectroscopy (XPS). The Hf 4f and Hf 3d photoelectron peaks broadened and shifted toward a higher binding energy with increasing thickness of the interfacial SiO 2 layer, even though photoelectrons may have been emitted from the HfO 2 layer with the same chemical composition. Thinning the interfacial Si oxide layer to approximately one monolayer and depositing a metal layer on the HfO 2 surface suppressed these phenomena. The O 1s photoelectron spectra revealed marked differences between the metal- and nonmetal-deposited HfO 2 /SiO 2 /Si structures; HfO 2 and SiO 2 components in the O 1s photoelectron spectra for the metal-deposited structures were observed at reasonably separated binding energies, but those for the nonmetal-deposited structures were not separated clearly. From this behavior concerning the effects of interfacial SiO 2 and surface metal layers, we concluded that the Hf 4f, Hf 3d, and O 1s spectra measured from the HfO 2 /SiO 2 /Si structures did not reflect actual chemical bonding states. We consider that potential variations in the HfO 2 film owing to charge trapping strongly affect the measured photoelectron spectra. On the basis of angle-resolved XPS measurements, we propose that positive charges are trapped at the HfO 2 surface and negative charges are trapped inside the HfO 2 layer. (author)
Johannes, Daniel; Webber, Robert
Adiabatic demagnetization refrigerators (ADR) are operated in space to cool detectors of cosmic radiation to a few 10s of mK. A key element of the ADR is a superconducting magnet operating at about 0.3 K that is continually energized and de-energized in synchronism with a thermal switch, such that a piece of paramagnetic salt is alternately warm in a high magnetic field and cold in zero magnetic field. This causes the salt pill or refrigerant to cool, and it is able to suck heat from an object, e.g., the sensor, to be cooled. Current has to be fed into and out of the magnets from a dissipative power supply at the ambient temperature of the spacecraft. The current leads that link the magnets to the power supply inevitably conduct a significant amount of heat into the colder regions of the supporting cryostat, resulting in the need for larger, heavier, and more powerful supporting refrigerators. The aim of this project was to design and construct high-temperature superconductor (HTS) leads from YBCO (yttrium barium copper oxide) composite conductors to reduce the heat load significantly in the temperature regime below the critical temperature of YBCO. The magnet lead does not have to support current in the event that the YBCO ceases to be superconducting. Cus - tomarily, a normal metal conductor in parallel with the YBCO is a necessary part of the lead structure to allow for this upset condition; however, for this application, the normal metal can be dispensed with. Amorphous silicon dioxide is deposited directly onto the surface of YBCO, which resides on a flexible substrate. The silicon dioxide protects the YBCO from chemically reacting with atmospheric water and carbon dioxide, thus preserving the superconducting properties of the YBCO. The customary protective coating for flexible YBCO conductors is silver or a silver/gold alloy, which conducts heat many orders of magnitude better than SiO2 and so limits the use of such a composite conductor for passing current
Trogisch, S.; Simpson, M.J.; Taub, H.
We report comprehensive atomic force microscopy (AFM) measurements at room temperature of the nanoscale topography and lateral friction on the surface of thin solid films of an intermediate-length normal alkane, dotriacontane (n-C32H66), adsorbed onto a SiO2 surface. Our topographic and frictional...
Kjær, Daniel; Gammelgaard, Lauge; Bøggild, Peter
In order to successfully measure the conductivity of a sample with a four- point probe, good alignment of the electrodes to the sample is important to establish even contact pressure and contact areas of the electrodes. By incorporating a hinge in a microfabricated SiO2 mono- cantilever the ability...
Full Text Available This paper presents the preparation of high-quality vanadium dioxide (VO2 thermochromic thin films with enhanced visible transmittance (Tvis via radio frequency (RF sputtering and plasma enhanced chemical vapor deposition (PECVD. VO2 thin films with high Tvis and excellent optical switching efficiency (Eos were successfully prepared by employing SiO2 as a passivation layer. After SiO2 deposition, the roughness of the films was decreased 2-fold and a denser structure was formed. These morphological changes corresponded to the results of optical characterization including the haze, reflectance and absorption spectra. In spite of SiO2 coating, the phase transition temperature (Tc of the prepared films was not affected. Compared with pristine VO2, the total layer thickness after SiO2 coating was 160 nm, which is an increase of 80 nm. Despite the thickness change, the VO2 thin films showed a higher Tvis value (λ 650 nm, 58% compared with the pristine samples (λ 650 nm, 43%. This enhancement of Tvis while maintaining high Eos is meaningful for VO2-based smart window applications.
Full Text Available Coatings of carbon nanoparticles dispersed in SiO2, ZnO and NiO matrices on aluminium substrates have been fabricated by a sol–gel technique. Spectrophotometry was used to determine the solar absorptance and the thermal emittance of the composite...
Full Text Available Porous hydroxyapatite doped SiO2 coatings were electrophoretically deposited (EPD on commercially pure titanium. The influence of EPD parameters on coatings quality was investigated. Microstructural observation was done using transmission and scanning electron microscopy as well as X-ray diffractometry.
Yuan, Ying; Wang, Jie; Yao, Minghao; Tang, Bin; Li, Enzhu; Zhang, Shuren
Composite substrates for microwave circuit applications have been fabricated by filling polytetrafluoroethylene (PTFE) polymer matrix with ceramic powder consisting of rutile TiO2 ( D 50 ≈ 5 μm) partially substituted with fused amorphous SiO2 ( D 50 ≈ 8 μm) with composition x vol.% SiO2 + (50 - x) vol.% TiO2 ( x = 0, 3, 6, 9, 12), and the effects of SiO2 addition on characteristics such as the density, moisture absorption, microwave dielectric properties, and thermal properties systematically investigated. The results show that the filler was well distributed throughout the matrix. High dielectric constant ( ɛ r > 7.19) and extremely low moisture absorption (ceramic particles served as barriers and improved the thermal stability of the PTFE polymer, retarding its decomposition. The temperature coefficient of dielectric constant ( τ ɛ ) of the composites shifted toward the positive direction (from - 309 ppm/°C to - 179 ppm/°C) as the SiO2 content was increased, while the coefficient of thermal expansion remained almost unchanged (˜ 35 ppm/°C).
Didden, A.; Hillebrand, P.; Wollgarten, M.; Dam, B.; Van de Krol, R.
Conductive TiN shells have been deposited on SiO2 nanoparticles (10–20 nm primary particle size) with fluidized bed atomic layer deposition using TDMAT and NH3 as precursors. Analysis of the powders confirms that shell growth saturates at approximately 0.4 nm/cycle at TDMAT doses of >1.2 mmol/g of
Gutiérrez-Solís, M C; Muñoz-Rodríguez, D; Carrera-Figueiras, C; Ávila-Ortega, A; Medina-Peralta, S
A sorbent material based on silica particles modified with poly(N-vinylimidazole) (SiO 2 -PVI) has been evaluated for the treatment of samples by matrix solid-phase dispersion (MSPD). The extraction of four organophosphorus pesticides was done from a spiked tomato and the extracts were analyzed by gas chromatography coupled to mass spectrometry. Six elution solvents were evaluated and acetone was selected due to better recovery of the four pesticides and low background signal in the chromatograms. A factorial design 2 4 was used for selection of extraction conditions. The factors were contact time, acetone volume, treatment (with or without freeze-drying) and adsorbent (SiO 2 or SiO 2 -PVI). The best recoveries were obtained using 15 minutes of contact, 2 mL of solvent and sorbent without freeze-drying. The recoveries were between 60 and 83% for SiO 2 -PVI in spiked tomato with 0.2 and 0.8μg/g.
Shen, J.T.; Top, M.; Pei, Y.T.; de Hosson, Jeff
In this work, the tribological performance of PTFE filled SiO2 particles–epoxy composites is investigated. Under a load of 60 N (~140 MPa contact pressure), the optimum content of PTFE lies between 10 and 15 wt%, which yields an ultralow coefficient of friction (CoF) in conjunction with a low wear
eco-friendly bismuth glass microcomposites of plasma display panels. SHIV PRAKASH SINGH ... MS received 12 November 2008; revised 18 March 2009. Abstract. The effects .... In view of above, in this paper we report the effects of. SiO2 (amorphous) ..... mic Membrane Sections of this institute for carrying out the XRD and ...
Gao, Yangqin; Gereige, Issam; El Labban, Abdulrahman; Cha, Dong Kyu; Isimjan, Tayirjan T.; Beaujuge, Pierre
Highly transparent and UV-resistant superhydrophobic arrays of SiO 2-coated ZnO nanorods are prepared in a sequence of low-temperature (<150 C) steps on both glass and thin sheets of PET (2 × 2 in. 2), and the superhydrophobic nanocomposite
Holinga, George J; York, Roger L; Onorato, Robert M; Thompson, Christopher M; Webb, Nic E; Yoon, Alfred P; Somorjai, Gabor A
Sum frequency generation (SFG) vibrational spectroscopy was employed to characterize the interfacial structure of eight individual amino acids--L-phenylalanine, L-leucine, glycine, L-lysine, L-arginine, L-cysteine, L-alanine, and L-proline--in aqueous solution adsorbed at model hydrophilic and hydrophobic surfaces. Specifically, SFG vibrational spectra were obtained for the amino acids at the solid-liquid interface between both hydrophobic d(8)-polystyrene (d(8)-PS) and SiO(2) model surfaces and phosphate buffered saline (PBS) at pH 7.4. At the hydrophobic d(8)-PS surface, seven of the amino acids solutions investigated showed clear and identifiable C-H vibrational modes, with the exception being l-alanine. In the SFG spectra obtained at the hydrophilic SiO(2) surface, no C-H vibrational modes were observed from any of the amino acids studied. However, it was confirmed by quartz crystal microbalance that amino acids do adsorb to the SiO(2) interface, and the amino acid solutions were found to have a detectable and widely varying influence on the magnitude of SFG signal from water at the SiO(2)/PBS interface. This study provides the first known SFG spectra of several individual amino acids in aqueous solution at the solid-liquid interface and under physiological conditions.
Full Text Available In this paper, air plasmas spray (APS was used to prepare YSZ and Sc2O3–YSZ (ScYSZ coating in order to improve the thermal insulation ability of TC4 alloy. SiO2 aerogel was also synthesized and affixed on TC4 titanium alloy to inhabit thermal flow. The microstructures, phase compositions and thermal insulation performance of three coatings were analyzed in detail. The results of thermal diffusivity test by a laser flash method showed that the thermal diffusivities of YSZ, Sc2O3–YSZ and SiO2 aerogel are 0.553, 0.539 and 0.2097×10−6 m2/s, respectively. Then, the thermal insulation performances of three kinds of coating were investigated from 20 °C to 400 °C using high infrared radiation heat flux technology. The experimental results indicated that the corresponding temperature difference between the top TC4 alloy (400 °C and the bottom surface of YSZ is 41.5 °C for 0.6 mm thickness coating. For 1 mm thickness coating, the corresponding temperature difference between the top TC4 alloys (400 °C and the bottom surface of YSZ, ScYSZ, SiO2 aerogel three specimens is 54, 54.6 and 208 °C, respectively. The coating thickness and species were found to influence the heat insulation ability. In these materials, YSZ and ScYSZ exhibited a little difference for heat insulation behavior. However, SiO2 aerogel was the best one among them and it can be taken as protection material on TC4 alloys. In outer space, SiO2 aerogel can meet the need of thermal insulation of TC4 of high-speed aircraft.
Fan, Fang-Li; Qin, Zhi; Bai, Jing; Rong, Wei-Dong; Fan, Fu-You; Tian, Wei; Wu, Xiao-Lei; Wang, Yang; Zhao, Liang
Rapid removal of U(VI) from aqueous solutions was investigated using magnetic Fe(3)O(4)@SiO(2) composite particles as the novel adsorbent. Batch experiments were conducted to study the effects of initial pH, amount of adsorbent, shaking time and initial U(VI) concentrations on uranium sorption efficiency as well as the desorbing of U(VI). The sorption of uranium on Fe(3)O(4)@SiO(2) composite particles was pH-dependent, and the optimal pH was 6.0. In kinetics studies, the sorption equilibrium can be reached within 180 min, and the experimental data were well fitted by the pseudo-second-order model, and the equilibrium sorption capacities calculated by the model were almost the same as those determined by experiments. The Langmuir sorption isotherm model correlates well with the uranium sorption equilibrium data for the concentration range of 20-200 mg/L. The maximum uranium sorption capacity onto magnetic Fe(3)O(4)@SiO(2) composite particles was estimated to be about 52 mg/g at 25 °C. The highest values of uranium desorption (98%) was achieved using 0.01 M HCl as the desorbing agent. Fe(3)O(4)@SiO(2) composite particles showed a good selectivity for uranium from aqueous solution with other interfering cation ions. Present study suggested that magnetic Fe(3)O(4)@SiO(2) composite particles can be used as a potential adsorbent for sorption uranium and also provided a simple, fast separation method for removal of heavy metal ion from aqueous solution. Copyright © 2011 Elsevier Ltd. All rights reserved.
Tsvetelina, Gerganova; Yordanka, Ivanova; Yuliya, Vueva; Miranda, Salvado Isabel M; Helena, Fernandes Maria
The crystallization behaviour of hybrid SiO2-TiO2 nanocomposites derived from titanosiloxanes by sol-gel method has been investigated depending on the type of siloxane precursor and the pirolysis temperature. The resulting hybrid titanosiloxanes, crosslinked with trimethylsilil isocyanate (nitrogen-modified) or methyltrietoxisilane (carbon-modified), were pirolyzed in an inert atmosphere in the temperature range between 600 to 1100 degrees C in order to form C-(N)-Si-O-TiO2 nanocomposites. By means of XRD, FTIR, 29Si NMR, SEM, TEM and AFM investigations have been established that the transformation of the nanostructured SiO2-TiO2 hybrid materials into nanocomposites as well as the crystalline size depend on the titanium content and the type of cross-linking agents used in the synthesizes.
Recently, single layer MoS2 with a direct band gap of 1.9 eV has been proposed as a candidate for two dimensional nanoelectronic devices. However, the synthetic approach to obtain high-quality MoS2 atomic thin layers is still problematic. Spectroscopic and microscopic results reveal that both single layers and tetrahedral clusters of MoS2 are deposited directly on the SiO2/Si substrate by chemical vapor deposition. The tetrahedral clusters are mixtures of 2H- and 3R-MoS2. By ex situ optical analysis, both the single layers and tetrahedral clusters can be attributed to van der Waals epitaxial growth. Due to the similar layered structures we expect the same growth mechanism for other transition-metal disulfides by chemical vapor deposition. © 2013 The Royal Society of Chemistry.
Palit, Sabarni; Kirch, Jeremy; Mawst, Luke; Kuech, Thomas; Jokerst, Nan Marie
We present the heterogeneous integration of a 3.8 μm thick InGaAs/GaAs edge emitting laser that was metal-metal bonded to SiO2/Si and end-fire coupled into a 2.8 μm thick tapered SU8 polymer waveguide integrated on the same substrate. The system was driven in pulsed mode and the waveguide output was captured on an IR imaging array to characterize the mode. The waveguide output was also coupled into a multimode fiber, and into an optical head and spectrum analyzer, indicating lasing at ~997 nm and a threshold current density of 250 A/cm2.
Vireton, E.; Ganau, P.; Mackowski, J.M.; Michel, C.; Pinard, L.; Remillieux, A.
To improve mirrors coating, we have modeled sputtering of binary oxide targets using TRIM code. First, we have proposed a method to calculate TRIM input parameters using on the one hand thermodynamic cycle and on the other hand Malherbe's results. Secondly, an iterative processing has provided for oxide steady targets caused by ionic bombardment. Thirdly, we have exposed a model to get experimental sputtering yields. Fourthly, for (Ar - SiO 2 ) pair, we have determined that steady target is a silica one. A good agreement between simulated and experimental yields versus ion incident angle has been found. For (Ar - Ta 2 O 5 ) pair, we have to introduce preferential sputtering concept to explain discrepancy between simulation and experiment. In this case, steady target is tantalum monoxide. For (Ar - Ta(+O 2 ) pair, tantalum sputtered by argon ions in reactive oxygen atmosphere, we have to take into account new concept of oxidation stimulated by ion beam. We have supposed that tantalum target becomes a Ta 2 O 5 one in reactive oxygen atmosphere. Then, following mechanism is similar to previous pair. We have obtained steady target of tantalum monoxide too. Comparison between simulated and experimental sputtering yields versus ion incident angle has given very good agreement. By simulation, we have found that tantalum monoxide target has at least 15 angstrom thickness. Those results are compatible with Malherbe's and Taglauer's ones. (authors)
A new kind of asymmetric organic-inorganic porous structure has been proposed. Asymmetric lattices of polymer grafted silica nanoparticles were manufactured by casting and phase inversion in water. Silica nanoparticles were first functionalized with 3-(dimethylethoxysilyl)propyl-2-bromoisobutyrate, followed by grafting of poly(methylmethacrylate) (PMMA) segments, performed by atom-transfer radical polymerization. Mechanically stable self-standing films were prepared by casting a dispersion of functionalized nanoparticles in different solvents and immersion in water. The resulting asymmetrically porous morphology and nanoparticle assembly was characterized by scanning electron and atomic force microscopy. The PMMA functionalized SiO2 hybrid material in acetone or acetone/dioxane led to the best-assembled structures. Porous asymmetric membranes were prepared by adding free PMMA and PMMA terminated with hydrophilic hydroxyl group. Nitrogen flow of 2800 L m-2 h -1 was measured at 1.3 bar demonstrating the porosity and potential application for membrane technology. © 2014 Springer Science+Business Media New York.
Prasad, S.J.; Owen, S.J.T.
Indium Phosphide is an attractive material for high-speed devices. Though many successful devices have been built and demonstrated, InP MISFET's still suffer from drain current drift. From the data current drift measurements, the shift in the threshold voltage ΔV was computed for different times. It was found that a linear relationship exists between √ΔV and log(t). When a positive bias-stress was applied to the gate of an MIS capacitor for a time t, the C-V cure shifted by an amount ΔV and again, a linear relationship was observed between √ΔV and log(t). This was verified on four different gate insulators: pyrolytic SiO 2 at 320 0 C and 360 0 C, plasma oxide at 300 0 C and photo CVD oxide at 225 0 C. These results can only be explained by a model in which electrons tunnel from the substrate into oxide traps
Yamamoto, Mahito; Cullen, William; Einstein, Theodore; Fuhrer, Michael
Surface oxidation of MoS2 markedly affects its electronic, optical, and tribological properties. However, oxidative reactivity of atomically thin MoS2 has yet to be addressed. Here, we investigate oxidation of atomic layers of MoS2 using atomic force microscopy and Raman spectroscopy. MoS2 is mechanically exfoliated onto SiO2 and oxidized in Ar/O2 or Ar/O3 (ozone) at 100-450 °C. MoS2 is much more reactive to O2 than an analogous atomic membrane of graphene and monolayer MoS2 is completely etched very rapidly upon O2 treatment above 300 °C. Thicker MoS2 (> 15 nm) transforms into MoO3 after oxidation at 400 °C, which is confirmed by a Raman peak at 820 cm-1. However, few-layer MoS2 oxidized below 400 °C exhibits no MoO3 Raman mode but etch pits are formed, similar to graphene. We find atomic layers of MoS2 shows larger reactivity to O3 than to O2 and monolayer MoS2 transforms chemically upon O3 treatment even below 100 °C. Work supported by the U. of Maryland NSF-MRSEC under Grant No. DMR 05-20741.
Giulian, R.; Kluth, P.; Johannessen, B.; Araujo, L.L.; Llewellyn, D.J.; Cookson, D.J.; Ridgway, M.C.
Pt nanocrystals (NCs) produced by ion implantation in SiO 2 films were investigated by Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM) and small angle X-ray scattering (SAXS). The implantations were performed at liquid nitrogen temperature using energies between 3.4 and 5.6 MeV and an ion fluence range of 2-30 x 10 16 cm -2 and were followed by annealing in forming gas (95% N 2 , 5% H 2 ) for one hour at temperatures between 500 and 1100 deg. C. TEM analysis revealed that the NCs are spherical in shape. The mean size of the NCs annealed at 1100 deg. C varied between 2.8 and 3.6 nm for the highest and lowest fluences, respectively, as determined with both TEM and SAXS. In contrast to previous studies on ion implanted metal NCs, larger Pt NCs are located far beyond the Pt peak concentration, potentially the result of a strongly defect mediated NC nucleation
Chiam, L.T.; Tye, C.T.
Environmental friendly bio-oil which offers supply reliability as a potential alternative fuel, has spurred to rapid development of bio fuels technology. Palm oil is a potential renewable energy source for bio fuels production in the future and Malaysia is one of the world largest palm oil producers. However, undesired oxygen content in the plant fatty acid that contributes to low energy density, high viscosity, and low stability, makes the palm oil not effective to be used as bio fuels directly. In the present study, the performance of silica supported trimetal catalyst, NiSnK/ SiO 2 , on deoxygenation of used palm oil was evaluated. In addition, the effects of operating parameters, such as reaction temperature and weight hourly space velocity were investigated. Conversion of palmitic acid as high as 90 % was achieved in deoxygenation of used palm oil at reaction temperature 350 degree Celsius. In order to have a better understanding on the deoxygenation reaction, model compound system using the major saturated fatty acid in the used palm oil, palmitic acid was also carried out. Palmitic acid was found mainly decarboxylated into n-pentadecane with some decarboxylation and isomerization products. (author)
Topçu, Gökhan; Güner, Tuğrul; Demir, Mustafa M.
Structural colors have recently attracted interest from diverse fields of research due to their ease of fabrication and eco-friendliness. These types of colors are, in principle, achieved by periodically arranged submicron-diameter colloidal particles. The interaction of light with a structure containing long-range ordered colloidal particles leads to coloration; this usually varies depending on the angle of observation (iridescence). However, the majority of the applications demand constant color that is independent of the viewing angle (non-iridescence). In this work, silica colloids were obtained using the Stöber method at different sizes from 150 to 300 nm in an alcoholic dispersion. The casting of the dispersion on a substrate leaves behind a photonic crystal showing a colorful iridescent film. However, centrifugation and redispersion of the SiO2 particles into fresh solvent may cause the formation of small, aggregated silica domains in the new dispersion. The casting of this dispersion allows for the development of photonic glass, presumably due to the accumulation of aggregates showing stable colloidal film independent of viewing angle. Moreover, depending on the size of the silica colloids, non-iridescent photonic glasses with various colors (violet, blue, green, and orange) are obtained.
Sorokin, A.V.; Gnap, B.A.; Bespalova, I.I.; Yefimova, S.L.; Malyukin, Yu.V.
The effect of cyanine dye 3,3′-dioctadecyloxacarbocyanine perchlorate (DiO) and benzimidazole dye 4-dimethylamino-1,8-naphthoylene-1′,2′-benzimidazole (DNBI) accumulation in nanoporous silica matrices on the dyes luminescence properties has been studied. For both dyes, ground state dimer formation with perpendicular transition dipoles at high dye concentrations has been considered as a result of restricted geometry of the nanoscale pores. The dimer excitation leads to excimer formation revealing by appearance of new long-wavelength luminescence band and shortening the dye luminescence lifetime. In the excimer luminescence excitation spectra two additional bands have been observed, one of which is bathochromically shifted relatively to the absorption band and another one is hypsocromically shifted. Using the Kasha exciton model it was shown that the excimers possess oblique transition dipoles configuration. - Highlights: • Organic dye molecules are efficiently accumulated in nanoporous silica matrices. • Restricted geometry of SiO 2 nanopores provokes excimerization of both cyanine and benzimidazole dyes. • The excimers reveal configuration of oblique dimers. • The excimers are originated from ground state dimers with a perpendicular arrangement of transition dipoles.
Kim, In Sook; Lim, H. B.; Kim, Yang Sun
In this work, the fundamental study of on-line monitoring of SiO 2 particles in the size range of 40 nm to 725 nm was carried out using turbidimetry. The size of particle was measured using a field emission scanning electron microscope (FE-SEM). The factors affecting on the turbidity were discussed, for example, wavelength, size, and concentration. In order to observe the dependence of turbidity on the wavelength, a turbidimetric system equipped with charged coupled detector (CCD) was built. The shape of the transmitted peak was changed and the peak maximum was shifted to the red when the concentration of particle was increased. This result indicates that the turbidity is related to the wavelength, which corresponds to the characteristic of the Mie extinction coefficient, Q, that is a function of not only particle diameter and refractive index but also wavelength. It is clear that a linear calibration curve for each particle in different size can be obtained at an optimized wavelength
Lancok, A.; Zaveta, K.; Savii, C.; Barcova, K.
Fe 2 O 3 /SiO 2 magnetic nanocomposites rich in Fe 2 O 3 have been obtained by annealing at 1000 grad C the xerogel samples, prepared under various conditions. The target concentrations of iron oxide in inert matrix were 20% and 30%. As mesoporous matrices both silica and polyvinyl alcohol - silica hybrid ones were used. The xerogel nanocomposite samples were obtained in situ and by impregnation under ultrasonic activation. All obtained samples were annealed under moderate oxidation conditions (air) and inert atmosphere such as vacuum or nitrogen. Moessbauer spectra were obtained using a conventional Moessbauer spectrometer with a 57 Co/Rh source and constant acceleration. Velocity calibration was done using α-iron, and the Moessbauer parameters are given relative to this standard at room temperature. The Moessbauer spectra contained the sextets of ε-Fe 2 O 3 , hematite, and superparamagnetic component. The content of various phases in the samples depends on the conditions of preparation. In one of the samples also magnetite was present. The ranges of the ε-Fe 2 O 3 area of the samples are 39-76%. The hematite phase is only residual, after transformation due to heat treatment. (authors)
Nguyen Thanh Chung; Tran Ngoc Ha; Hoang Van Duc
A novel method (High-gravity reactive precipitation - HGRP) was developed to prepare nano-SiO 2 from rice husk ash using gas-liquid reaction system. The precipitated silica produced by our proposed method had average size of 20 nm with narrow size distribution and purity of SiO 2 was approximately 99.2%. The principles of the method as well as experimental conditions were also described. (author)
Liu Dianlong; Yang Zhigang; Zhang Chi
Ternary Ni-based amorphous films can serve as a diffusion barrier layer for Cu interconnects in ultralarge-scale integration (ULSI) applications. In this paper, electroless Ni-Mo-P films deposited on SiO 2 layer without sputtered seed layer were prepared by using Pd-activated self-assembled monolayer (SAM). The solutions and operating conditions for pretreatment and deposition were presented, and the formation of Pd-activated SAM was demonstrated by XPS (X-ray photoelectron spectroscopy) analysis and BSE (back-scattered electron) observation. The effects of the concentration of Na 2 MoO 4 added in electrolytes, pH value, and bath temperature on the surface morphology and compositions of Ni-Mo-P films were investigated. The microstructures, diffusion barrier property, electrical resistivity, and adhesion were also examined. Based on the experimental results, the Ni-Mo-P alloys produced by using Pd-activated SAM had an amorphous or amorphous-like structure, and possessed good performance as diffusion barrier layer.
Drummond, Charles H., III; Bansal, Narottam P.
Glass of stoichiometric celsian composition, BaO-Al2O3-SiO2, has a density of 3.39 g/cu cm, a thermal expansion coefficient of 6.6 x 10 to the -6th/C, a glass-transition temperature of 910 C, and a dilatometric softening point of 925 C. On heat treatment, only hexacelsian crystallized out on the surface, but both celsian and hexacelsian were present in the bulk. Effects of cold isostatic pressing (CIP), sintering, and hot-pressing, in the presence and absence of an additive, on the formation of the celsian phase in the glass have been studied. CIP'd samples, after appropriate heat treatments, always crystallized out as celsian, whereas presence of 5-10 wt pct of an additive was necessary for formation of celsian in sintered as well as hot-pressed specimens. Green density increased with CIP'ing pressure but had no effect on sintered density. Hot-pressing resulted in fully dense samples.
Liu, Xiaoming; Zhao, Lan; Domen, Kazunari; Takanabe, Kazuhiro
Fine nanoparticles of Ta3N5 (10-20 nm) were synthesized on the surfaces of SiO2 spheres with a diameter of ∼550 nm. A sol-gel method was used to modify the surface of SiO2 with Ta2O5 from TaCl5 dissolved in ethanol in the presence of citric acid
This paper discusses the potential use of (Fe3O4@SiO2-SO3H) nanoparticle catalyst for the dehydration of glucose into 5-hydroxymethylfurfural (HMF). A magnetically recoverable (Fe3O4@SiO2-SO3H) nanoparticle catalyst was successfully prepared by supporting sulfonic acid groups (SO3H) on the surface o...
We report an eco-friendly synthesis of well–controlled, nano-to-micron-size, spherical SiO2 particles using non-hazardous solvent and a byproducts-producing system. It was found that the morphology and size of spherical SiO2 particles are controlled by adjusting the concentration...
Han, Tongtong; Li, Caifeng; Guo, Xiangyu; Huang, Hongliang; Liu, Dahuan; Zhong, Chongli
A series of SiO2@aluminum-MOF(MIL-68) composites with different SiO2 loadings have been synthesized by a simple and mild compositing strategy for high-efficiency removal of aniline. As evidenced from SEM and TEM images as well as the particle size distribution, the incorporation of SiO2 can improve the dispersity of MIL-68(Al) in composites, and result in the smaller particle size than that of pristine MIL-68(Al). Besides, the adsorption of aniline over SiO2, MIL-68(Al), the physical mixture of these two materials, and SiO2@MIL-68(Al) composites was investigated comparatively, demonstrating a relatively high adsorption capacity (531.9 mg g-1) of 7% SiO2@MIL-68(Al) towards aniline. Combining the ultrafast adsorption dynamics (reaching equilibrium within 40 s) and great reusability, 7% SiO2@MIL-68(Al) shows excellent adsorption performance. This indicates that the SiO2@MIL-68(Al) composites possess great potential applications as a kind of fascinating adsorbent in water pollution protection.
Dai, Chi-Jie; Tsao, Hou-Yen; Lin, Yow-Jon; Liu, Day-Shan
This study investigates the effect of different types of SiO 2 on the electronic and surface properties of pentacene films. Developing better contacts on dielectrics is one of the main challenges for pentacene-based transistor technology. The water contact angle variation indicates more hydrophobic thermally grown SiO 2 surfaces than sol–gel SiO 2 surfaces, suggesting that the thermally grown SiO 2 dielectric enables a better molecular arrangement as the pentacene layer is deposited. It is found that the carrier mobility in pentacene on thermally grown SiO 2 dielectrics is higher than that in pentacene on sol–gel SiO 2 dielectrics. The Hall-effect analysis by using the polaron theory revealed that the enhanced carrier mobility is due to the increased spacing between molecules. - Highlights: • The carrier mobility of pentacene on thermally grown and sol–gel SiO 2 was researched. • The enhanced carrier mobility of pentacene on thermally grown SiO2 was observed. • The dominance of tunneling (hopping) at low (high) temperatures was observed. • The carrier mobility is correlated with the morphology of pentacene films
Hu, Yue; Miao, Zhao-Yi; Zhang, Xiao-Jing; Yang, Xiao-Tong; Tang, Ying-Ying; Yu, Sheng; Shan, Chen-Xiao; Wen, Hong-Mei; Zhu, Dong
The currently utilized ligand fishing for bioactive molecular screening from complex matrixes cannot perform imaging screening. Here, we developed a new solid-phase ligand fishing coupled with an in situ imaging protocol for the specific enrichment and identification of heat shock protein 90 (Hsp 90) inhibitors from Tripterygium wilfordii, utilizing a multiple-layer and microkernel-based mesoporous nanostructure composed of a protective silica coating CdTe quantum dot (QD) core and a mesoporous silica shell, i.e., microkernel-based mesoporous (SiO 2 -CdTe-SiO 2 )@SiO 2 fluorescent nanoparticles (MMFNPs) as extracting carries and fluorescent probes. The prepared MMFNPs showed a highly uniform spherical morphology, retention of fluorescence emission, and great chemical stability. The fished ligands by Hsp 90α-MMFNPs were evaluated via the preliminary bioactivity based on real-time cellular morphology imaging by confocal laser scanning microscopy (CLSM) and then identified by mass spectrometry (MS). Celastrol was successfully isolated as an Hsp 90 inhibitor, and two other specific components screened by Hsp 90α-MMFNPs, i.e., demecolcine and wilforine, were preliminarily identified as potential Hsp 90 inhibitors through the verification of strong affinity to Hsp 90 and antitumor bioactivity. The approach based on the MMFNPs provides a strong platform for imaging screening and discovery of plant-derived biologically active molecules with high efficiency and selectivity.
The crystallization of the Bi 2 O 3 -SiO 2 -TiO 2 -Al 2 O 3 -Na 2 O-K 2 O and Bi 2 O 3 -SiO 2 -ZnO-Al 2 O 3 -B 2 O 3 -Na 2 O glasses was studied using glass samples prepared by traditional melt-quench method. Differential thermal analysis (DTA) curves suggested that surface crystallization played a major role in the crystallization of the glass samples. X-ray diffraction (XRD) analysis revealed the crystallization of bismuth silicate for both glasses and bismuth silicate and zinc silicate for the glass containing ZnO. Through scanning electron microscopy (MEV) and energy dispersive spectroscopy (EDS), it was possible to observe that the crystals of zinc silicate (Zn 2 SiO 4 ) were readily attacked by hot 0,1 N sulfuric acid, whereas bismuth silicate crystals were more resistant to acidic attack etching. (author)
Proton implantation into the buried oxide of Si/SiO 2 /Si structures does not introduce mobile protons. The cross section for capture of radiation-induced electrons by mobile protons is two orders of magnitude smaller than for electron capture by trapped holes. The data provide new insights into the atomic mechanisms governing the generation and radiation tolerance of mobile protons in SiO 2 . This can lead to improved techniques for production and radiation hardening of radiation tolerant memory devices
Matsui, Miyako; Kuwahara, Kenichi
A cyclic process for highly selective SiO2 etching with atomic-scale precision over Si3N4 was developed by using BCl3 and fluorocarbon gas chemistries. This process consists of two alternately performed steps: a deposition step using BCl3 mixed-gas plasma and an etching step using CF4/Ar mixed-gas plasma. The mechanism of the cyclic process was investigated by analyzing the surface chemistry at each step. BCl x layers formed on both SiO2 and Si3N4 surfaces in the deposition step. Early in the etching step, the deposited BCl x layers reacted with CF x radicals by forming CCl x and BF x . Then, fluorocarbon films were deposited on both surfaces in the etching step. We found that the BCl x layers formed in the deposition step enhanced the formation of the fluorocarbon films in the CF4 plasma etching step. In addition, because F radicals that radiated from the CF4 plasma reacted with B atoms while passing through the BCl x layers, the BCl x layers protected the Si3N4 surface from F-radical etching. The deposited layers, which contained the BCl x , CCl x , and CF x components, became thinner on SiO2 than on Si3N4, which promoted the ion-assisted etching of SiO2. This is because the BCl x component had a high reactivity with SiO2, and the CF x component was consumed by the etching reaction with SiO2.
Kusanagi, Susumu; Kobayashi, Hajime
Decreases in oxygen signal intensities in spectra of high-resolution Rutherford backscattering spectrometry (HRBS) were observed during measurements on a 5-nm thick SiO 2 layer on a Si substrate when irradiated by 250-550 keV He + ions. Shifts in an implanted arsenic profile in a 5-nm thick SiO 2 /Si substrate were also observed as a result of He + ion irradiation. These results lead to the conclusion that the SiO 2 surface was sputtered by He + ions in this energy range
Vega, N C; Caram, J; Grinblat, G; Comedi, D; Wallar, R; LaPierre, R R; Tirado, M
Vertically aligned ZnO nanowires (NWs) were grown on Au-nanocluster-seeded amorphous SiO 2 films by the advective transport and deposition of Zn vapours obtained from the carbothermal reaction of graphite and ZnO powders. Both the NW volume and visible-to-UV photoluminescence ratio were found to be strong functions of, and hence could be tailored by, the (ZnO+C) source–SiO 2 substrate distance. We observe C flakes on the ZnO NWs/SiO 2 substrates which exhibit short NWs that developed on both sides. The SiO 2 and C substrates/NW interfaces were studied in detail to determine growth mechanisms. NWs on Au-seeded SiO 2 were promoted by a rough ZnO seed layer whose formation was catalysed by the Au clusters. In contrast, NWs grew without any seed on C. A correlation comprising three orders of magnitude between the visible-to-UV photoluminescence intensity ratio and the NW volume is found, which results from a characteristic Zn partial pressure profile that fixes both O deficiency defect concentration and growth rate. (paper)
Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki
We have investigated the dependence of the oxide layer structure of our previously proposed metal/SiO2/SiOx/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) resistive memory device on the memory operation characteristics. The current-voltage (I-V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I-V curve. By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. Compared with a memory device formed by one-step or two-step oxidation of 3C-SiC, a memory device formed by one-step oxidation of Si/3C-SiC exhibits a more restrictive SiOx interface with a more definitive SiO2 layer and higher memory performances for both the endurance switching cycle and on/off current ratio.
Lee, Min Hee; Lee, Choon Soo; Patil, Umakant Mahadev; Kochuveedu, Saji Thomas
In this study, we investigate the potential use of TiO 2 SiO 2 and ZnO SiO 2 core/shell nanoparticles (NPs) as effective UV shielding agent. In the typical synthesis, SiO 2 was coated over different types of TiO 2 (anatase and rutile) and ZnO by sol-gel method. The synthesized TiO 2 SiO 2 and ZnO SiO 2 Nps were characterized by UV-Vis, XRD, Sem and TEM. The UV-vis absorbance and transmittance spectra of core shell NPs showed an efficient blocking effect in the UV region and more than 90% transmittance in the visible region. XRD and SAED studies confirmed the formation of amorphous SiO 2 coated over the TiO 2 and ZnO NPs. The FESEM and TEM images shows that coating of SiO 2 over the surface of anatase, rutile TiO 2 and ZnO NPs resulted in the increase in particle size by ∼30 nm. In order to study the UV light shielding capability of the samples, photocatalytic degradation of methylene blue dye on TiO 2 SiO 2 and ZnO SiO 2 NPs was performed. Photocatalytic activity for both types of TiO 2 NPs was partially suppressed. In comparison, the photocatalytic activity of ZnO almost vanished after the SiO 2 coating
Adsorption isotherm, adsorption kinetics and column breakthrough experiments evaluating trichloroethylene (TCE) adsorption onto granular activated carbon (GAC) were conducted in the presence and absence of silica nanoparticles (SiO2 NPs). Zeta potential of the SiO
Ren, Mengguo; Lu, Xiaonan; Deng, Lu; Kuo, Po-Hsuen; Du, Jincheng
The effect of B2O3/SiO2 substitution in SrO-containing 55S4.3 bioactive glasses on glass structure and properties, such as ionic diffusion and glass transition temperature, was investigated by combining experiments and molecular dynamics simulations with newly developed potentials. Both short-range (such as bond length and bond angle) and medium-range (such as polyhedral connection and ring size distribution) structures were determined as a function of glass composition. The simulation results were used to explain the experimental results for glass properties such as glass transition temperature and bioactivity. The fraction of bridging oxygen increased linearly with increasing B2O3 content, resulting in an increase in overall glass network connectivity. Ion diffusion behavior was found to be sensitive to changes in glass composition and the trend of the change with the level of substitution is also temperature dependent. The differential scanning calorimetry (DSC) results show a decrease in glass transition temperature (Tg) with increasing B2O3 content. This is explained by the increase in ion diffusion coefficient and decrease in ion diffusion energy barrier in glass melts, as suggested by high-temperature range (above Tg) ion diffusion calculations as B2O3/SiO2 substitution increases. In the low-temperature range (below Tg), the Ea for modifier ions increased with B2O3/SiO2 substitution, which can be explained by the increase in glass network connectivity. Vibrational density of states (VDOS) were calculated and show spectral feature changes as a result of the substitution. The change in bioactivity with B2O3/SiO2 substitution is discussed with the change in pH value and release of boric acid into the solution.
Woon, W.S.; Hutagalung, S.D.; Cheong, K.Y.
The physical and electronic properties of 100-120-nm thick anodic silicon dioxide film grown on p-type 4H-SiC wafer and annealed at different temperatures (500, 600, 700, and 800 deg. C ) have been investigated and reported. Chemical bonding of the films has been analyzed by Fourier transform infra red spectroscopy. Smooth and defect-free film surface has been revealed under field emission scanning electron microscope. Atomic force microscope has been used to study topography and surface roughness of the films. Electronic properties of the film have been investigated by high frequency capacitance-voltage and current-voltage measurements. As the annealing temperature increased, refractive index, dielectric constant, film density, SiC surface roughness, effective oxide charge, and leakage current density have been reduced until 700 deg. C . An increment of these parameters has been observed after this temperature. However, a reversed trend has been demonstrated in porosity of the film and barrier height between conduction band edge of SiO 2 and SiC
Wen, H.-C.; Lysaght, P.; Alshareef, H.N.; Huffman, C.; Harris, H.R.; Choi, K.; Senzaki, Y.; Luan, H.; Majhi, P.; Lee, B.H.; Campin, M. J.; Foran, B.; Lian, G.D.; Kwong, D.-L.
A systematic experimental evaluation of the thermal stability of Ru metal gate electrodes in direct contact with SiO 2 and Hf-based dielectric layers was performed and correlated with electrical device measurements. The distinctly different interfacial reactions in the Ru/SiO 2 , Ru/HfO 2 , and Ru/HfSiO x film systems were observed through cross-sectional high-resolution transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy with electron-energy-loss spectra, and energy dispersive x-ray spectra analysis. Ru interacted with SiO 2 , but remained stable on HfO 2 at 1000 deg. C. The onset of Ru/SiO 2 interfacial interactions is identified via silicon substrate pitting possibly from Ru diffusion into the dielectric in samples exposed to a 900 deg. C/10-s anneal. The dependence of capacitor device degradation with decreasing SiO 2 thickness suggests Ru diffuses through SiO 2 , followed by an abrupt, rapid, nonuniform interaction of ruthenium silicide as Ru contacts the Si substrate. Local interdiffusion detected on Ru/HfSiO x samples may be due to phase separation of HfSiO x into HfO 2 grains within a SiO 2 matrix, suggesting that SiO 2 provides a diffusion pathway for Ru. Detailed evidence consistent with a dual reaction mechanism for the Ru/SiO 2 system at 1000 deg. C is presented
Xu, Q; Sharp, I D; Yuan, C W; Yi, D O; Liao, C Y; Glaeser, A M; Minor, A M; Beeman, J W; Ridgway, M C; Kluth, P; Iii, J W Ager; Chrzan, D C; Haller, E E
Free-standing nanocrystals exhibit a size-dependant thermodynamic melting point reduction relative to the bulk melting point that is governed by the surface free energy. The presence of an encapsulating matrix, however, alters the interface free energy of nanocrystals and their thermodynamic melting point can either increase or decrease relative to bulk. Furthermore, kinetic contributions can significantly alter the melting behaviours of embedded nanoscale materials. To study the effect of an encapsulating matrix on the melting behaviour of nanocrystals, we performed in situ electron diffraction measurements on Ge nanocrystals embedded in a silicon dioxide matrix. Ge nanocrystals were formed by multi-energy ion implantation into a 500 nm thick silica thin film on a silicon substrate followed by thermal annealing at 900 deg. C for 1 h. We present results demonstrating that Ge nanocrystals embedded in SiO 2 exhibit a 470 K melting/solidification hysteresis that is approximately symmetric about the bulk melting point. This unique behaviour, which is thought to be impossible for bulk materials, is well described using a classical thermodynamic model that predicts both kinetic supercooling and kinetic superheating. The presence of the silica matrix suppresses surface pre-melting of nanocrystals. Therefore, heterogeneous nucleation of both the liquid phase and the solid phase are required during the heating and cooling cycle. The magnitude of melting hysteresis is governed primarily by the value of the liquid Ge/solid Ge interface free energy, whereas the relative values of the solid Ge/matrix and liquid Ge/matrix interface free energies govern the position of the hysteresis loop in absolute temperature
Dennler, G.; Houdayer, A.; Segui, Y.; Wertheimer, M.R.
Transparent inorganic oxide coatings on polymers are playing an increasingly important role in pharmaceutical, food, and beverage packaging, and more recently in encapsulation of organic, light-emitting display devices. Such coatings are being prepared by physical or by chemical vacuum-deposition methods. They possess barrier properties against permeation of gases or vapors when they are thicker than a certain critical thickness, d c ; for d c , the 'oxygen transmission rate' (in standard cm 3 /m 2 /day/bar), for example, is roughly the same as that of the uncoated polymer. This fact is commonly attributed in the literature to a 'nucleation' phase of the coating's growth, during which it is thought to present an island-like structure. In order to test this hypothesis, we have deposited hyperthin SiO 2 coatings on various flexible polymeric substrates using plasma-enhanced chemical vapor deposition. The film thicknesses investigated here, well below d c (typically in the range 1-10 nm), were determined by Rutherford backscattering spectroscopy, which allows us to determine the surface concentration of silicon. This was found to be a linear function of the deposition time, t, for t≥0.5 s. Then, combining reactive ion etching in oxygen plasma with scanning electron and optical microscopy, we have been able to characterize the structure of the coatings: even for d≤2 nm, no island structure has been observed. Instead, we found continuous coatings which contain large concentrations, n, of tiny pinhole defects (with typical radii in the range of tens of nanometers), where n increases with decreasing d. These assertions are confirmed by grazing angle (80 deg. ) angle-resolved x-ray photoelectron spectroscopy, which shows that even for d=2 nm, the structural features of the polymer substrate cannot be detected
Milivojević, D.; Babić-Stojić, B.; Jokanović, V.; Jagličić, Z.; Makovec, D.
Samples of Mn-oxide nanoparticles dispersed in an amorphous SiO2 matrix with manganese concentration 0.7 and 3 at% have been synthesized by a sol-gel method. Transmission electron microscopy analysis has shown that the samples contain agglomerates of amorphous silica particles 10-20 nm in size. In silica matrix two types of Mn-rich particles are dispersed, smaller nanoparticles with dimensions between 3 and 10 nm, and larger crystalline areas consisting of aggregates of the smaller nanoparticles. High-temperature magnetic susceptibility study reveals that dominant magnetic phase at higher temperatures is λ-MnO2. At temperatures below TC=43 K strong ferrimagnetism originating from the minor Mn3O4 phase masks the relatively weak magnetism of λ-MnO2 with antiferromagnetic interactions. Magnetic field dependence of the maximum in the zero-field-cooled magnetization for both the samples in the vicinity of 40 K, and a frequency shift of the real component of the ac magnetic susceptibility in the sample with 3 at% Mn suggest that the magnetic moments of the smaller Mn3O4 nanoparticles with dimensions below 10 nm are exposed to thermally activated blocking process just below the Curie temperature TC. Appearance of a maximum in the zero-field-cooled magnetization for both the samples below 10 K indicates possible spin glass freezing of the magnetic moments at low temperatures which might occur in the geometrically frustrated Mn sublattice of the λ-MnO2 crystal structure.
The C-V characteristics of the structure M-TmF 3 -SiO 2 -Si, thermally treated at a temperature of 300 0 C for 15 minutes, were investigated. At higher temperatures to about 150 0 C, the hysteresis of the C-V characteristics is completely absent, whereas at room temperature hysteresis depends on the applied voltage and on the material of the gate electrode. The dependence of the flat band voltage shift on the applied voltage, the thickness of SiO 2 layer and the material of the gate electrode were measured. (author)
Laleh Enayati Ahangar
Full Text Available In this research we have developed a treatment method for textile wastewater by TiO2/SiO2-based magnetic nanocomposite. Textile wastewater includes a large variety of dyes and chemicals and needs treatments. This manuscript presents a facile method for removing dyes from the textile wastewater by using TiO2/SiO2-based nanocomposite (Fe3O4@SiO2/TiO2 under UV irradiation. This magnetic nanocomposite, as photocatalytically active composite, is synthesized via solution method in mild conditions. A large range of cationic, anionic and neutral dyes including: methyl orange, methylene blue, neutral red, bromocresol green and methyl red are used for treatment investigations. Neutral red and bromocresol green have good results in reusing treatment. The high surface area of nanocomposites improve the kinetic of wastewater treatment. In this method, by using the magnetic properties of Fe3O4 nanoparticles, TiO2-based photocatalyst could be separated and reused for 3 times. The efficiency of this method is respectively 100% and 65% for low concentration (10 ppm and high concentration (50 ppm of neutral red and bromocrosol green after 3 h treatment. The efficiency of treatment using the second used nanocomposite was 90% for 10 ppm of the same dyes.
Li, Ronghua; Boudot, Mickael; Boissière, Cédric; Grosso, David; Faustini, Marco
The appearance of structural colors on coated-glass is a critical esthetical drawback toward industrialization of photocatalytic coatings on windows for architecture or automobile. Herein we describe a rational approach to suppress the structural color of mesoporous TiO 2 -based coatings preserving photoactivity and mechanical stiffness. Addition of SiO 2 as third component is discussed. Ti x Si (1-x) O 2 mesoporous coatings were fabricated by one-step liquid deposition process through the evaporation induced self-assembling and characterized by GI-SAXS, GI-WAXS, electron microscopies, and in situ Environmental Ellipsometry Porosimetry. Guided by optical simulation, we investigated the critical role of SiO 2 on the optical responses of the films but also on the structural, mechanical, and photocatalytic properties, important requirements to go toward real applications. We demonstrate that adding SiO 2 to porous TiO 2 allows tuning and suppression of structural colors through refractive index matching and up to 160% increase in mechanical stiffening of the films. This study leads us to demonstrate an example of "invisible" coating, in which the light reflection is angle- and thickness-independent, and exhibiting high porosity, mechanical stiffness, and photoactivity.
Full Text Available Monolithic mesoporous silica glasses were synthesized. The presence of Cu2+ and Fe3+ cations during the synthesis of sol-gel precursors leads to different morphologies and pore sizes. The materials are characterized via IR and Raman scattering spectra to detect surface groups and -Si-O-Si- rings (i.e., 3–6 Si atoms and morphology is examined through electron microscopy. N2 sorption isotherms reveal details of the mesoporous structure of the materials, which are endowed with significantly large surface areas and pore volumes. Vapor percolation occurs in these samples because of a void arrangement consisting of pore bulges delimited by narrower necks. The optical characterization shows the luminescence spectrum and thermoluminescent behavior subjected to successive exposures of beta particles.
Qasim, M; Paik, P; Das, D; Singh, Braj R; Naqvi, A H
Candida albicans is a diploid fungus that causes common infections such as denture stomatitis, thrush, urinary tract infections, etc. Immunocompromised patients can become severely infected by this fungus. Development of an effective anticandidal agent against this pathogenic fungus, therefore, will be very useful for practical application. In this work, Ag-embedded mesoporous silica nanoparticles (mSiO_2@AgNPs) have successfully been synthesized and their anticandidal activities against C. albicans have been studied. The mSiO_2@AgNPs nanoparticles (d ∼ 400 nm) were designed using pre-synthesized Ag nanoparticles and tetraethyl orthosilicate (TEOS) as a precursor for SiO_2 in the presence of cetyltrimethyl ammonium bromide (CTAB) as an easily removable soft template. A simple, cost-effective, and environmentally friendly approach has been adopted to synthesize silver (Ag) nanoparticles using silver nitrate and leaf extract of Azadirachta indica. The mesopores, with size-equivalent diameter of the micelles (d = 4–6 nm), were generated on the SiO_2 surface by calcination after removal of the CTAB template. The morphology and surface structure of mSiO_2@AgNPs were characterized through x-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FTIR), particle size analysis (PSA), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), Brunauer–Emmett–Teller (BET) and high-resolution transmission electron microscopy (HRTEM). The HRTEM micrograph reveals the well-ordered mesoporous structure of the SiO_2 sphere. The antifungal activities of mSiO_2@AgNPs on the C. albicans cell have been studied through microscopy and are seen to increase with increasing dose of mSiO_2@AgNPs, suggesting mSiO_2@AgNPs to be a potential antifungal agent for C. albicans 077. (paper)
Full Text Available Eucalyptus pulp cellulose fibers were modified by the sol-gel process for SiO2 superficial deposition and used as reinforcement of thermoplastic starch (TPS. Cassava starch, glycerol, and water were added at the proportion of 60/26/14, respectively. For composites, 5% and 10% (by weight of modified and unmodified pulp fibers were added before extrusion. The matrix and composites were submitted to thermal stability, tensile strength, moisture adsorption, and SEM analysis. Micrographs of the modified fibers revealed the presence of SiO2 nanoparticles on fiber surface. The addition of modified fibers improved tensile strength in 183% in relation to matrix, while moisture adsorption decreased 8.3%. Such improvements were even more effective with unmodified fibers addition. This result was mainly attributed to poor interaction between modified fibers and TPS matrix detected by SEM analysis.
Yang, Peng; Yang, Yingshu; Wang, Yinghui; Gao, Jiechao; Sui, Ning; Chi, Xiaochun; Zou, Lu; Zhang, Han-Zhuang
The photoluminescence (PL) characteristics of CdSe quantum dots (QDs) infiltrated into inverse opal SiO2 photonic crystals (PCs) are systemically studied. The special porous structure of inverse opal PCs enhanced the thermal exchange rate between the CdSe QDs and their surrounding environment. Finally, inverse opal SiO2 PCs suppressed the nonlinear PL enhancement of CdSe QDs in PCs excited by a continuum laser and effectively modulated the PL characteristics of CdSe QDs in PCs at high temperatures in comparison with that of CdSe QDs out of PCs. The final results are of benefit in further understanding the role of inverse opal PCs on the PL characteristics of QDs. Copyright © 2015 John Wiley & Sons, Ltd.
Razaki, N. Iznie; Jais, U. Sarah; Abd-Rahman, M. Kamil; Bhaktha, S. N. B.; Chiasera, A.; Ferrari, M.
Higher doping of Er 3+ in glass ceramic waveguides would cause concentration and pair-induced quenching which lead to inhomogeneous line-width of luminescence spectrum thus reduce output intensity. Concentration quenching can be overcome by introducing ZrO 2 in the glass matrix while co-doping with Yb 3+ which acts as sensitizer would improve the excitation efficiency of Er 3+ . In this study, SiO 2 -ZrO 2 planar waveguides having composition in mol percent of 70SiO 2 -30ZrO 2 doped with Er 3+ and co-doped with Yb 3+ , were prepared via sol-gel route. Narrower and shaper peaks of PL and XRD shows the formation of nanocrystals. Intensity is increase with addition amount of Yb 3+ shows sensitizing effect on Er 3+ .
Sakoh, Akifumi; Takahashi, Masahide; Yoko, Toshinobu; Nishii, Junji; Nishiyama, Hiroaki; Miyamoto, Isamu
The photoluminescence spectra of the divalent Ge (Ge2+) center in GeO2-SiO2 glasses with different photosensitivities were investigated by means of excitation-emission energy mapping. The ultraviolet light induced photorefractivity has been correlated with the local structure around the Ge2+ centers. The glasses with a larger photorefractivity tended to exhibit a greater band broadening of the singlet-singlet transition on the higher excitation energy side accompanied by an increase in the Stokes shifts. This strongly suggests the existence of highly photosensitive Ge2+ centers with higher excitation energies. It is also found that the introduction of a hydroxyl group or boron species in GeO2-SiO2 glasses under appropriate conditions modifies the local environment of Ge2+ leading to an enhanced photorefractivity.
Espinosa, M.E.; Perez H, R.; Perez A, M.; Mondragon G, G.; Arenas A, J.
The surface properties of catalysts of Pt and Ag supported in conventional SiO 2 hey have been studied through reduction reactions of N 2 O with H 2 which is a sensitive reaction to the structure. In our case it was used a meso porous ceramic support of SiO 2 of great surface area (1100 m 2 /gr), where it is caused a high dispersion of the metallic nanoparticles of Pt and Ag, the total charge of the active phase in the meso porous support was of 3% in weight. The catalysts show a variation in the percentages of conversion of N 2 O depending on the size and dispersion of the metallic phases. (Author)
Kim, Chaeho; Jeon, D.
We studied the early-stage growth of vacuum-evaporated pentacene film on a native SiO 2 surface using atomic force microscopy and in-situ spectroscopic ellipsometry. Pentacene deposition prompted an immediate change in the ellipsometry spectra, but atomic force microscopy images of the early stage films did not show a pentacene-related morphology other than the decrease in the surface roughness. This suggested that a thin pentacene wetting layer was formed by pentacene molecules lying on the surface before the crystalline islands nucleated. Growth simulation based on the in situ spectroscopic ellipsometry spectra supported this conclusion. Scanning capacitance microscopy measurement indicated the existence of trapped charges in the SiO 2 and pentacene wetting layer
Takeuchi, Wakana; Washizu, Tomoya; Ike, Shinichi; Nakatsuka, Osamu; Zaima, Shigeaki
We have investigated the selective growth of a Ge1- x Sn x epitaxial layer on a line/space-patterned SiO2/Si substrate by metal-organic chemical vapor deposition. We examined the behavior of a Sn precursor of tributyl(vinyl)tin (TBVSn) during the growth on Si and SiO2 substrates and investigated the effect of the Sn precursor on the selective growth. The selective growth of the Ge1- x Sn x epitaxial layer was performed under various total pressures and growth temperatures of 300 and 350 °C. The selective growth of the Ge1- x Sn x epitaxial layer on the patterned Si region is achieved at a low total pressure without Ge1- x Sn x growth on the SiO2 region. In addition, we found that the Sn content in the Ge1- x Sn x epitaxial layer increases with width of the SiO2 region for a fixed Si width even with low total pressure. To control the Sn content in the selective growth of the Ge1- x Sn x epitaxial layer, it is important to suppress the decomposition and migration of Sn and Ge precursors.
Schamm, S.; Bonafos, C.; Coffin, H.; Cherkashin, N.; Carrada, M.; Ben Assayag, G.; Claverie, A.; Tence, M.; Colliex, C.
Fabrication of systems in which Si nanoparticles are embedded in a thin silica layer is today mature for non-volatile memory and opto-electronics applications. The control of the different parameters (position, size and density) of the nanoparticles population is a key point to optimize the properties of such systems. A review of dedicated transmission electron microscopy (TEM) methods, which can be used to measure these parameters, is presented with an emphasis on those relying on electron energy-loss spectroscopy (EELS). Defocused bright-field imaging can be used in order to determine topographic information of a whole assembly of nanoparticles, but it is not efficient for looking at individual nanoparticles. High-resolution electron imaging or dark-field imaging can be of help in the case of crystalline particles but they always provide underestimated values of the nanocrystals population. EELS imaging in the low-energy-loss domain around the Si plasmon peak, which gives rise to strong signals, is the only way to visualize all Si nanoparticles within a silica film and to perform reliable size and density measurements. Two complementary types of experiments are investigated and discussed more extensively: direct imaging with a transmission electron microscope equipped with an imaging filter (EFTEM) and indirect imaging from spectrum-imaging data acquired with a scanning transmission electron microscope equipped with a spectrometer (STEM-PEELS). The direct image (EFTEM) and indirect set of spectra (STEM-PEELS) are processed in order to deliver images where the contribution of the silica matrix is minimized. The contrast of the resulting images can be enhanced with adapted numerical filters for further morphometric analysis. The two methods give equivalent results, with an easier access for EFTEM and the possibility of a more detailed study of the EELS signatures in the case of STEM-PEELS. Irradiation damage in such systems is also discussed
Bi Bi Fatemeh Mirjalili
Full Text Available A rapid one-pot method has been developed for the synthesis of azo dyes via sequential diazotization–diazo coupling of aromatic amines with coupling agents at room temperature in the presence of BF3.SiO2 as acidic catalyst. The obtained aryl diazonium salts bearing silica supported boron tri-flouride counter ion was sufficiently stable to be kept at room temperature in the dry state.
Trachenko, Kostya; Dove, Martin T; Brazhkin, Vadim; El'kin, F S
We report in situ studies of SiO2 glass under pressure and find that temperature-induced densification takes place in a pressure window. To explain this effect, we study how rigidity of glasses changes under pressure, with rigidity percolation affecting the dynamics of local relaxation events. We link rigidity percolation in glasses to other effects, including a large increase of crystallization temperature and logarithmic relaxation under pressure.
Brath, T.; Buc, D.; Kovac, J.; Hrnciar, V.; Caplovic, L.
We have investigated n-ZnO polycrystalline thin films prepared on SiO 2 and p-GaP substrate using magnetron sputtering technique. The structural and electrical properties of these structures were studied. The measured parameters give promising results with a possibility to utilize n-ZnO/p-GaP heterostructure for application in the solar cells development especially in the field of nanostructures. The prepared structures will be a subject of further research. (authors)
Cho, Byeong-Ok; Hwang, Sung-Wook; Lee, Gyeo-Re; Moon, Sang Heup
The angular dependence of the redeposition rates during SiO 2 etching in a CF 4 plasma was studied using three types of Faraday cages located in a transformer coupled plasma etcher. The SiO 2 substrates were fixed on sample holder slopes that have different angles to the cathode. The substrate was subjected to one of three processes depending on the design of the Faraday cage, i.e., redeposition of sputtered particles from the SiO 2 bottom surface (case I), substrate etching by incident ions (case II), or simultaneous etching and redeposition (case III). Both the redeposition and the etch rates were measured by changing the substrate-surface angle and the self-bias voltage in the range of -100 to -800 V. The redeposition-only rates (case I) at -450 and -800 V closely followed the quadratic curve of the angle whereas the rates at -100 V followed the cubic curve, indicating different mechanisms of the bottom SiO 2 etching depending on the energy regimes. The steep increase of the redeposition rate with the angle was attributed to three factors: the substrate-bottom distance, the angular distribution of emitted particles from the bottom surface, and the particle incident angle on the substrate surface. The etch-only rate curves (case II) closely followed the cosine of the surface angle. The etch-rate curve changed into a reverse-S shape when the substrate was subjected to simultaneous etching and redeposition (case III). The net etch rate for case III decreased drastically above 60 deg. , showing a negative value, i.e., a net redeposition, beyond 75 deg. . The drastic decrease in the net etch rate coincided with the steep increase in the redeposition rate, implying the significant effect of redeposition
Yang, Xiao; Yasuda, Kouji; Nohira, Toshiyuki; Hagiwara, Rika; Homma, Takayuki
As part of an ongoing fundamental study to develop a new process for producing solar-grade silicon, this paper examines the effects of cathodic potential on reduction kinetics, current efficiency, morphology, and purity of Si product during electrolysis of SiO2 granules in molten CaCl2 at 1123 K (850 °C). SiO2 granules were electrolyzed potentiostatically at different cathodic potentials (0.6, 0.8, 1.0, and 1.2 V vs Ca2+/Ca). The reduction kinetics was evaluated based on the growth of the reduced Si layer and the current behavior during electrolysis. The results suggest that a more negative cathodic potential is favorable for faster reduction. Current efficiencies in 60 minutes are greater than 65 pct at all the potentials examined. Si wires with sub-micron diameters are formed, and their morphologies show little dependence on the cathodic potential. The impurities in the Si product can be controlled at low level. The rate-determining step for the electrochemical reduction of SiO2 granules in molten CaCl2 changes with time. At the initial stage of electrolysis, the electron transfer is the rate-determining step. At the later stage, the diffusion of O2- ions is the rate-determining step. The major cause of the decrease in reduction rate with increasing electrolysis time is the potential drop from the current collector to the reaction front due to the increased contact resistance among the reduced Si particles.
Valladares, L. de los Santos; Dominguez, A. Bustamante; Llandro, J.; Holmes, S.; Quispe, O. Avalos; Langford, R.; Aguiar, J. Albino; Barnes, C.H.W.
Highlights: • Annealing promotes outgassing of SiO 2 /Si wafers. • Outgassing species embed in the a-Ge film forming bubbles. • The density of bubbles obtained by slow annealing is smaller than by rapid annealing. • The bubbles explode after annealing the samples at 800 °C. • Surface migration at higher temperatures forms polycrystalline GeO 2 islands. - Abstract: In this work we report the surface morphology of amorphous germanium (a-Ge) thin films (140 nm thickness) following thermal outgassing of SiO 2 /Si substrates. The thermal outgassing was performed by annealing the samples in air at different temperatures from 400 to 900 °C. Annealing at 400 °C in slow (2 °C/min) and fast (10 °C/min) modes promotes the formation of bubbles on the surface. A cross sectional view by transmission electron microscope taken of the sample slow annealed at 400 °C reveals traces of gas species embedded in the a-Ge film, allowing us to propose a possible mechanism for the formation of the bubbles. The calculated internal pressure and number of gas molecules for this sample are 30 MPa and 38 × 10 8 , respectively. Over an area of 22 × 10 −3 cm 2 the density of bubbles obtained at slow annealing (9 × 10 3 cm −2 ) is smaller than that at rapid annealing (6.4 × 10 4 cm −2 ), indicating that the amount of liberated gas in both cases is only a fraction of the total gas contained in the substrate. After increasing the annealing temperature in the slow mode, bubbles of different diameters (from tens of nanometers up to tens of micrometers) randomly distribute over the Ge film and they grow with temperature. Vertical diffusion of the outgas species through the film dominates the annealing temperature interval 400–600 °C, whereas coalescence of bubbles caused by lateral diffusion is detected after annealing at 700 °C. The bubbles explode after annealing the samples at 800 °C. Annealing at higher temperatures, such as 900 °C, leads to surface migration of the
Cesta, J. M.; Goehring, B. M.; Ward, D. J.
We assess the feasibility and utility of in situ cosmogenic 14C as a geochronometer for landforms composed of amorphous SiO2 through the comparison of 14C surface exposure ages to independently determined eruption ages on Obsidian Dome, California. Landforms composed of amorphous SiO2 phases are difficult to date by conventional cosmogenic nuclide methods due to several complications that may arise (e.g., inability to remove meteoric contamination). The onset of an increased understanding of production rates and analytical measurement of in situ 14C in SiO2 provides an opportunity to address this limitation. Obsidian Dome is a 600-year-old phreatomagmatic dome of the Mono-Inyo Craters located in Inyo County, California, and consists of vesicular pumice, obsidian, and rhyolite. Exposure ages from eight obsidian and banded pumice and obsidian surface samples range from 3947 ± 678 to 914 ± 134 years, all significantly older than the accepted radiocarbon age of 650-550 years. δ13C values for the samples range between +2.65‰ and +1.34‰ and show a negative correlation with CO2 yield. The `too old' exposure ages coupled with this negative correlation between δ13C and CO2 yield suggests the incorporation of an atmospheric component of 14C. Measurement of 14C concentrations in shielded, subsurface samples will assist in isolating the atmospheric 14C component and aid in correcting the surface exposure ages.
Cheng, Zhi-Lin; Li, Yan-Xiang; Liu, Zan
The exploration of the relationship between zeolite composition and adsorption performance favored to facilitate its better application in removal of the hazardous substances from water. The adsorption capacity of rhodamine B (RB) onto Beta zeolite from aqueous solution was reported. The relationship between SiO 2 /Al 2 O 3 ratio and adsorption capacity of Beta zeolite for RB was explored. The structure and physical properties of Beta zeolites with various SiO 2 /Al 2 O 3 ratios were determined by XRD, FTIR, TEM, BET, UV-vis and so on characterizations. The adsorption behavior of rhodamine B onto Beta zeolite matched to Langmuir adsorption isotherm and more suitable description for the adsorption kinetics was a pseudo-second-order reaction model. The maximum adsorption capacity of the as-prepared Beta zeolite with SiO 2 /Al 2 O 3 = 18.4 was up to 27.97mg/g. Copyright © 2017 Elsevier Inc. All rights reserved.
Qourzal, S.; Barka, N.; Tamimi, M.; Assabbane, A.; Nounah, A.; Ihlal, A.; Ait-Ichou, Y.
Silica gel supported titanium dioxide particles (TiO 2 -SiO 2 ) prepared by sol-gel method was as photocatalyst in the degradation of β-naphthol in water under UV-illumination. The prepared sample has been characterized by powder X-ray diffraction (XRD), infrared spectroscopy (IR) and scanning electron microscopy (SEM). The supported catalyst had large surface area and good sedimentation ability. The photodegradation rate of β-naphthol under UV-irradiation depended strongly on adsorption capacity of the catalyst, and the photoactivity of the supported catalyst was much higher than that of the pure titanium dioxides. The experiments were measured by high performance liquid chromatography (HPLC). The photodegradation rate of β-naphthol using 60% TiO 2 -SiO 2 particles was faster than that using TiO 2 'Degussa P-25', TiO 2 'PC-50' and TiO 2 'Aldrich' as photocatalyst by 2.7, 4 and 7.8 times, respectively. The kinetics of photocatalytic β-naphthol degradation was found to follow a pseudo-first-order rate law. The effect of the TiO 2 loading on the photoactivity of TiO 2 -SiO 2 particles was also discussed. With good photocatalytic activity under UV-irradiation and the ability to be readily separated from the reaction system, this novel kind of catalyst exhibited the potential effective in the treatment of organic pollutants in aqueous systems.
Chen, Mao; Raghunath, Sreekanth; Zhao, Baojun
The present study delivered the measurements of viscosities in SiO2-"FeO"-Al2O3 system in equilibrium with metallic Fe. The rotational spindle technique was used in the measurements at the temperature range of 1473 K to 1773 K (1200 °C to 1500 °C). Molybdenum crucibles and spindles were employed in all measurements. The Fe saturation condition was maintained by an iron plate placed at the bottom of the crucible. The equilibrium compositions of the slags were measured by EPMA after the viscosity measurements. The effect of up to 20 mol. pct Al2O3 on the viscosity of the SiO2-"FeO" slag was investigated. The "charge compensation effect" of the Al2O3 and FeO association has been discussed. The modified quasi-chemical viscosity model has been optimized in the SiO2-"FeO"-Al2O3 system in equilibrium with metallic Fe to describe the viscosity measurements of the present study.
Chen, Mao; Raghunath, Sreekanth; Zhao, Baojun
The present study delivers the measurements of viscosities in the SiO2-"FeO"-MgO system in equilibrium with metallic Fe. The rotational spindle technique was used for the measurements at the temperature range of 1523 K to 1773 K (1250 °C to 1500 °C). Molybdenum crucibles and spindles were employed in all measurements. The viscosity measurements were carried out at 31 to 47 mol pct SiO2 and up to 18.8 mol pct MgO. Analysis of the quenched sample by Electron probe X-ray microanalysis after the viscosity measurement enables the composition and microstructure of the slag to be directly linked with the viscosity. The replacement of "FeO" by MgO was found to increase viscosity and activation energy of the SiO2-"FeO"-MgO slags. The modified Quasi-chemical Viscosity Model was further optimized in this system based on the current viscosity measurements.
Liu, H.; Liu, L. L.
The phase transition sequence of SiO2 inducing by high pressure was theoretically predicted as coordination number (CN=6) structures (rutile, pyrite), CN=8 (Pnma) and CN=9 (P-62m) structures, but only the phases up to pyrite structure in SiO2 were observed experimentally up to now. The CN8 phase and CN9 phases of SiO2 were predicted to be stable at least 650 GPa, which is challenging to achieve in the static DAC experiment at present. In other metal dioxide systems, such as TiO2, the ambient rutile and anatase phases first transform to pyrite (CN6), then to the baddeleyite (CN7) phase, to a Pnma (CN8) phase and P-62m(CN9) phase. In this report, under strong compression at room temperature, several metal dioxides were studied experimentally and theoretically, to verify whether this theoretical predicted trend is common transition path under strong compression. This work was supported by Natural Science Foundation of China (11374075), Heilongjiang Province Science Fund for Distinguished Young Scholars (JC201005), Longjiang Scholar, the Fundamental Research Funds for the Central Universities (HIT. BRET1.2010002, HIT. IBRSEM.A.201403).
Adamiak, Joanna; Kalinowska-Alichnewicz, Dorota; Szadkowski, Michal; Skupinski, Wincenty
Highlights: → A novel catalyst H 3 PO 4 /MoO 3 /SiO 2 was characterized and used in nitration. → On the surface domains of phosphomolybdic acid (HPM) are obtained. → Dinitrotoluene is obtained with very high yield i.e. 96 wt.% in mild conditions. → Dinitrochlorobenzene is obtained with only twelve-fold excess of nitric acid. → It is sulfuric acid free and solvent free nitration of aromatic compounds. - Abstract: A new catalyst, H 3 PO 4 /MoO 3 /SiO 2 , was prepared by modification of MoO 3 /SiO 2 using phosphoric acid. The characterization of the catalyst was performed using Infrared and Raman Spectroscopy, potentiometric titration and nitrogen adsorption-desorption methods. Molybdenum oxides were identified along with phosphomolybdic acid and polymolybdates on the modified surface. The suitability of the catalysts for toluene and chlorobenzene nitration in continuous process was examined. Toluene is effectively nitrated to dinitrotoluene (DNT) in one-stage process (96 wt.% of DNT in the product) and in mild conditions i.e. at room temperature and only with ten-fold excess of nitric acid. In chlorobenzene nitration only twelve-fold excess of nitric acid is needed to obtain as high yield as 95 wt.%. Most importantly, the novel catalysts we have developed, provide the opportunity for sulfuric acid- free nitration of aromatic compounds.
Singh, Chandra K.; Pandey, Brijesh K.; Pandey, Anjani K.
The Grüneisen parameter (γ) is very important to decide the limitations for the prediction of thermoelastic properties of bulk metallic glasses. It can be defined in terms of microscopic and macroscopic parameters of the material in which former is based on vibrational frequencies of atoms in the material while later is closely related to its thermodynamic properties. Different formulation and equation of states are used by the pioneer researchers of this field to predict the true sense of Gruneisen parameter for BMG but for SiO_2.TiO_2 very few and insufficient information is available till now. In the present work we have tested the validity of two different isothermal EOS viz. Poirrior-Tarantola EOS and Usual-Tait EOS to predict the true value of Gruneisen parameter for SiO_2.TiO_2 as a function of compression. Using different thermodynamic limitations related to the material constraints and analyzing obtained result it is concluded that the Poirrior-Tarantola EOS gives better numeric values of Grüneisen parameter (γ) for SiO_2.TiO_2 BMG.
Using IR reflection spectroscopy, the influence of radiation-induced disturbances on a number of parameters of lattice oscillations in two SiO 2 modifications was investigated. Radiation kinetics of changes in spectral characteristics of fundamental oscillations in SiO 2 crystalline and glassy states was determined. Dose dependences of both reflectivity and degenerate mode vibrational frequency were found to show minima whose locations were governed by a type of a sample. Under higher doses of neutron radiation (10 21 cm -2 ), certain characteristics of bands were observed to be of the same values for the both materials modified. The features of radiation kinetics were found for dynamic parameters of the samples. It was deduced that specific character of radiation-induced changes observed in spectral and dynamic parameters of oscillations in the region of degenerate modes was due to both the accumulation of radiation damages and a change in the force field surrounding bridge-type bonds which was related with the change in the SiO 2 structure. (authors)
Liu, Zhaoting; Fan, Tongxiang; Zhou, Han; Zhang, Di; Gong, Xiaolu; Guo, Qixin; Ogawa, Hiroshi
A novel porous ZnFe2O4/SiO2 composite product has been generated with a template-directed assembly method from porous diatomite under different synthesis conditions, such as precursor concentrations (metallic nitrates), calcination temperature and diatomite type. The phase composition and morphology of all the materials were examined by x-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM). The results indicated that an inherited hierarchical porous structure from the diatomite template can be obtained, and the synthesis conditions were found to have clear effects on the formation of the ZnFe2O4/SiO2 composite. The ideal composite of ZnFe2O4/SiO2 can be obtained through optimization of diatomite template type, precursor solution and calcination temperature. Furthermore, the adsorption abilities of two types of diatomites were analyzed in detail using FTIR spectra and nitrogen adsorption measurements etc, which proved that A-diatomite (Shengzhou-diatomite) is better than B-diatomite (Changbai-diatomite) on the aspect of adsorbing Zn and Fe ions, and of forming the ZnFe2O4.
Cernea, M.; Vasile, B.S.; Boni, A.; Iuga, A.
Highlights: • Optimal parameters for preparation by sol–gel of core–shell (BT-Nb 0.005 )/SiO 2 are presented in this paper. • Single crystalline BT-Nb 0.005 /SiO 2 core–shell composite with ∼34 nm shell thick was prepared. • The core–shell ceramic exhibits good dielectric properties and ferroelectric characteristics. -- Abstract: Perovskite complex ceramic oxides, BaTiO 3 doped with 0.5 mol%Nb 2 O 5 and then nanocoated with SiO 2 (abbreviated as BT-Nb 0.005 /SiO 2 ) was successful prepared using conventional sol–gel processing. Phase composition, particle morphology, structure, and electric properties of BT-Nb 0.005 core and BT-Nb 0.005 /SiO 2 core–shell were examined and compared, using X-ray diffraction, transmission electron microscopy and, dielectric and ferroelectric measurements. Core–shell composite with well-defined perovskite tetragonal phase of BaTiO 3 was achieved. Furthermore, single crystalline BT-Nb 0.005 /SiO 2 core–nanoshell heterostructure with ∼34 nm shell thick was prepared, which is a novelty in ferroelectrics field. The ferroelectric quality of BT-Nb 0.005 has suffered an alteration when the (BT-Nb 0.005 )/SiO 2 core–shell heterostructure was realized. One-dimensional BT-Nb 0.005 /SiO 2 core–shell heterostructure exhibits an improvement of dielectric losses and a decrease of dielectric constant, compared to uncoated BT-Nb 0.005 . The (BT-Nb 0.005 )/SiO 2 core–shell material could be interesting for application in the composite capacitors
Hung, Cheng-Chun; Lin, Yow-Jon
The effect of H2O2 treatment on the surface properties of SiO2 is studied. H2O2 treatment leads to the formation of Si(sbnd OH)x at the SiO2 surface that serves to reduce the number of trap states, inducing the shift of the Fermi level toward the conduction band minimum. H2O2 treatment also leads to a noticeable reduction in the value of the SiO2 capacitance per unit area. The effect of SiO2 layers with H2O2 treatment on the behavior of carrier transports for the pentacene/SiO2-based organic thin-film transistor (OTFT) is also studied. Experimental identification confirms that the shift of the threshold voltage towards negative gate-source voltages is due to the reduced number of trap states in SiO2 near the pentacene/SiO2 interface. The existence of a hydrogenated layer between pentacene and SiO2 leads to a change in the pentacene-SiO2 interaction, increasing the value of the carrier mobility.
王克; 肖树秀; 柏永清; 刘朴; 马丽红; 苏碧桃
Kaur, Kulwinder; Singh, K. J.; Anand, Vikas; Kaur, Harpreet; Arora, Daljit Singh
Samples of the xCuO-(45-x)CaO-10P2O5-45SiO2 system (x varies from 0 to 4 mole%) have been synthesized for application as biomaterials to slow or inhibit the growth of living organisms (fungi and other pathogenic microorganisms) by the combination of sol-gel and co-precipitation processes. Prepared samples have been characterized by X-Ray Diffraction, Fourier Transform Infra-Red and Field Emission Scanning Electron Microscopy techniques before and after immersion in simulated body fluid. Antimicrobial activity of samples has been investigated against Staphylococcus aureus. Releasing of Cu2+and other ions in the simulated body fluid has been determined by Atomic Absorption Spectroscopy to ensure the use of prepared material as biomaterial with good antibacterial properties.
Full Text Available Chongwen Wang,1,2,* Kehan Zhang,2,* Zhe Zhou,2,* Qingjun Li,2 Liting Shao,2 Rong Zhang Hao,3 Rui Xiao,2 Shengqi Wang1,2 1College of Life Sciences & Bio-Engineering, Beijing University of Technology, 2Beijing Key Laboratory of New Molecular Diagnosis Technologies for Infectious Diseases, Beijing Institute of Radiation Medicine, Beijing, 3Institute for Disease Control and Prevention, Academy of Military Medical Sciences, Beijing, People’s Republic of China *These authors contributed equally to this work Abstract: Nanomaterials combined with antibiotics exhibit synergistic effects and have gained increasing interest as promising antimicrobial agents. In this study, vancomycin-modified magnetic-based silver microflowers (Van/Fe3O4@SiO2@Ag microflowers were rationally designed and prepared to achieve strong bactericidal ability, a wide antimicrobial spectrum, and good recyclability. High-performance Fe3O4@SiO2@Ag microflowers served as a multifunction-supporting matrix and exhibited sufficient magnetic response property due to their 200 nm Fe3O4 core. The microflowers also possessed a highly branched flower-like Ag shell that provided a large surface area for effective Ag ion release and bacterial contact. The modified-vancomycin layer was effectively bound to the cell wall of bacteria to increase the permeability of the cell membrane and facilitate the entry of the Ag ions into the bacterium, resulting in cell death. As such, the fabricated Van/Fe3O4@SiO2@Ag microflowers were predicted to be an effective and environment-friendly antibacterial agent. This hypothesis was verified through sterilization of Gram-negative Escherichia coli and Gram-positive methicillin-resistant Staphylococcus aureus, with minimum inhibitory concentrations of 10 and 20 µg mL-1, respectively. The microflowers also showed enhanced effect compared with bare Fe3O4@SiO2@Ag microflowers and free-form vancomycin, confirming the synergistic effects of the combination of the
Caraveo-Frescas, J. A.; Wang, H.; Schwingenschlö gl, Udo; Alshareef, Husam N.
The impact of SiO2 content in ultrathin gate dielectrics on the magnitude of the effective work function (EWF) shift induced by nanoscale capping layers has been investigated experimentally and theoretically. The magnitude of the effective work function shift for four different capping layers (AlN, Al2O3, La2O3, and Gd2O3) is measured as a function of SiO2 content in the gate dielectric. A nearly linear increase of this shift with SiO2 content is observed for all capping layers. The origin of this dependence is explained using density functional theory simulations.
Full Text Available Enhanced luminescence properties of Malachite Green (MG (oxalate in Fe-MG codoped SiO2 glasses compared to its values in MG doped SiO2 glasses are reported here. The enhancement is chiefly attributed to a resonance nonradiative energy transfer between Fe and MG. The quantum yield of Malachite Green (MG, in presence of Iron, trapped in sol-gel derived SiO2 glass increases by an order of ~103 compared to that in low viscous solvent while a lifetime of 3.29 ns is reported.
Caraveo-Frescas, J. A.
The impact of SiO2 content in ultrathin gate dielectrics on the magnitude of the effective work function (EWF) shift induced by nanoscale capping layers has been investigated experimentally and theoretically. The magnitude of the effective work function shift for four different capping layers (AlN, Al2O3, La2O3, and Gd2O3) is measured as a function of SiO2 content in the gate dielectric. A nearly linear increase of this shift with SiO2 content is observed for all capping layers. The origin of this dependence is explained using density functional theory simulations.
Ahn, Seok Hwan; Nam, Ki Woo
This study sintered Si 3 N 4 with different amounts of SiO 2 nano-colloid. The surface of a mirror-polished specimen was coated with SiO 2 nano-colloid, and cracks were healed when the specimen was treated at a temperature of 1273 K for 1 h in air. Wear specimen experiments were conducted after heat treatments for 10 min at 1073, 1273, and 1573 K. The heat-treated surface that was coated with the SiO 2 nano-colloid was slightly rougher than the noncoated surface. The oxidation state of the surface according to the heat treatment temperature showed no correlation with the surface roughness. Moreover, the friction coefficient, wear loss, and bending strength were not related to the surface roughness. Si 3 N 4 exhibited an abrasive wear behavior when SKD11 was used as an opponent material. The friction coefficient was proportional to the wear loss, and the bending strength was inversely proportional to the friction coefficient and wear loss. The friction coefficient and wear loss increased with increasing amounts of the SiO 2 nanocolloid. In addition, the friction coefficient was slightly increased by increasing the heat treatment temperature
Smentkowski, Vincent S.
Changes in the oxidation state of an element can result in significant changes in the ionization efficiency and hence signal intensity during secondary ion mass spectrometry (SIMS) analysis; this is referred to as the SIMS matrix effect [Secondary Ion Mass Spectrometry: A Practical Handbook for Depth Profiling and Bulk Impurity Analysis, edited by R. G. Wilson, F. A. Stevie, and C. W. Magee (Wiley, New York, 1990)]. The SIMS matrix effect complicates quantitative analysis. Quantification of SIMS data requires the determination of relative sensitivity factors (RSFs), which can be used to convert the as measured intensity into concentration units [Secondary Ion Mass Spectrometry: A Practical Handbook for Depth Profiling and Bulk Impurity Analysis, edited by R. G. Wilson, F. A. Stevie, and C. W. Magee (Wiley, New York, 1990)]. In this manuscript, the authors report both: RSFs which were determined for quantification of B in Si and SiO 2 matrices using a dual beam time of flight secondary ion mass spectrometry (ToF-SIMS) instrument and the protocol they are using to provide quantitative ToF-SIMS images and line scan traces. The authors also compare RSF values that were determined using oxygen and Ar ion beams for erosion, discuss the problems that can be encountered when bulk calibration samples are used to determine RSFs, and remind the reader that errors in molecular details of the matrix (density, volume, etc.) that are used to convert from atoms/cm 3 to other concentration units will propagate into errors in the determined concentrations
Kostko, Oleg; Ahmed, Musahid; Metz, Ricardo B.
In this work we report on the detection and vacuum-ultraviolet (VUV) photoionization of gas phase SiO2 generated in situ via laser ablation of silicon in a CO2 molecular beam. The resulting species are investigated by single photon ionization with tunable VUV synchrotron radiation and mass analyzed using reflectron mass spectrometry. Photoionization efficiency (PIE) curves are recorded for SiO and SiO2 and ionization energy estimates are revealed from such measurements. A state-to-state ionizationenergy of 12.60 (+-0.05) eV is recorded by fitting two prominent peaks in the PIE curve for the following process: 1SUM O-Si-O --> 2PRODg [O-Si-O]+. Electronic structure calculations aid in the interpretation of the photoionization process and allow for identification of the symmetric stretch of 2PRODg [O-Si-O]+ which is observed in the PIE spectrum to be 0.11 eV (890 cm-1) above the ground state of the cation and agrees with the 892 cm-1 symmetric stretch frequency calculated at the CCSD(T)/aug-cc-pVTZ level.
Kachurin, G. A.; Cherkova, S. G.; Skuratov, V. A.; Marin, D. V.; Kesler, V. G.; Volodin, V. A.
Thermally grown SiO 2 layers have been irradiated with 700-MeV Bi ions with doses of (3–10) × 10 12 cm −2 . It is found that, even after a dose of 3 × 10 12 cm −2 , a photoluminescence band in the region of 600 nm appears. Its intensity levels off at a dose of ∼5 × 10 12 cm −2 . The nature of the emission centers is studied by the methods of infrared transmission, Raman scattering, X-ray photoelectron spectroscopy, ellipsometry, and the reaction to passivating low-temperature anneals. It is established that irradiation brings about a decrease in the number of Si-O bonds with a relevant increase in the Si-Si bonds. It is assumed that the photoluminescence is caused by nanostructures containing an excess Si and/or having a deficit of O. The reaction of reduction of SiO 2 proceeds in ion tracks due to high levels of ionization and heating within these tracks. The dose dependence is used to estimate the diameter of a track at 8–9 nm.
Kuryliuk, Vasyl V.; Korotchenkov, Oleg A.
We use nonequilibrium molecular dynamics computer simulations with the Tersoff potential aiming to provide a comprehensive picture of the thermal conductivity of amorphous SiO2 (a-SiO2) matrix with embedded Ge nanocrystals (nc-Ge). The modelling predicts the a-SiO2 matrix thermal conductivity in a temperature range of 50 fair agreement with experiment at around room temperature. It is worth noticing that the predicted room-temperature thermal conductivity in a-SiO2 is in very good agreement with the experimental result, which is in marked contrast with the thermal conductivity calculated employing the widely used van Beest-Kramer-van Santen (BKS) potential. We show that the thermal conductivity of composite nc-Ge/a-SiO2 systems decreases steadily with increasing the volume fraction of Ge inclusions, indicative of enhanced interface scattering of phonons imposed by embedded Ge nanocrystals. We also observe that increasing the volume fractions above a certain threshold value results in a progressively increased thermal conductivity of the nanocomposite, which can be explained by increasing volume fraction of a better thermally conducting Ge. Finally, non-equilibrium molecular dynamics simulations with the Tersoff potential are promising for computing the thermal conductivity of nanocomposites based on amorphous SiO2 and can be readily scaled to more complex composite structures with embedded nanoparticles, which thus help design nanocomposites with desired thermal properties.
Full Text Available In this study, the current conduction mechanisms of structures with tandem high-k dielectric in illumination are discussed. Samples of Al/SiO2/Si (S, Al/HfO2/SiO2/Si (H, and Al/3HfO2/SiO2/Si (3H were examined. The significant observation of electron traps of sample H compares to sample S is found under the double bias capacitance-voltage (C-V measurements in illumination. Moreover, the photo absorption sensitivity of sample H is higher than S due to the formation of HfO2 dielectric layer, which leads to larger numbers of carriers crowded through the sweep of VG before the domination of tunneling current. Additionally, the HfO2 dielectric layer would block the electrons passing through oxide from valance band, which would result in less electron-hole (e−-h+ pairs recombination effect. Also, it was found that both of the samples S and H show perimeter dependency of positive bias currents due to strong fringing field effect in dark and illumination; while sample 3H shows area dependency of positive bias currents in strong illumination. The non-uniform tunneling current through thin dielectric and through HfO2 stacking layers are importance to MOS(p tunneling photo diodes.
Lo, G.Q.; Shih, D.K.; Ting, W.; Kwong, D.L.
In this letter, the radiation-induced interface state generation ΔD it in MOS devices with reoxidised nitrided gate oxides has been studied. The reoxidised nitrided oxides were fabricated by rapid thermal reoxidation (RTO) of rapidly thermal nitrided (RTN) SiO 2 . The devices were irradiated by exposure to X-rays at doses of 0.5-5.0 Mrad (Si). It is found that the RTO process improves the radiation hardness of RTN oxides in terms of interface state generation. The enhanced interface ''hardness'' of reoxidised nitrided oxides is attributed to the strainless interfacial oxide regrowth or reduction of hydrogen concentration during RTO of RTN oxides. (author)
Galeener, F.L.; Kerwin, D.B.; Miller, A.J.
The dependence of spin concentration on X-ray dose is shown to be nonlinear in distinctive ways for the three most common defect structures in vitreous SiO 2 . We fit the data with a model invoking two concurrent simple processes: creation of new defects and activation of preexisting ones. The resultant fit parameters show dependencies on hydroxyl concentration and fictive temperature that shed new light on the processes, the defects, their origins and the radiation hardness of v-SiO 2 . (author)
Jia, Q.X.; Arendt, P.; Groves, J.R.; Fan, Y.; Roper, J.M.; Foltyn, S.R.
Highly conductive biaxially textured RuO 2 thin films were deposited on technically important SiO 2 /Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO 2 on SiO 2 /Si. The biaxially oriented RuO 2 had a room-temperature resistivity of 37 μΩ-cm and residual resistivity ratio above 2. We then deposited Ba 0.5 Sr 0.5 TiO 3 thin films on RuO 2 /IBAD-YSZ/SiO 2 /Si. The Ba 0.5 Sr 0.5 TiO 3 had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz. copyright 1998 Materials Research Society
Jia, Lei; Chen, Jiang-xian; Lu, Zhen-lin; Li, Shu-feng; Umeda, Junko; Kondoh, Katsuyoshi
Ti alloys strengthened by both Si and O solutes were prepared by powder metallurgy method from pure Ti and amorphous SiO2 powder obtained by combusting rice husks. At the same time, Ti alloys singly strengthened by Si or O were also prepared for studying the strengthening effect of Si and O solutes. Results showed that amorphous SiO2 powder originated from rice husks could almost fully dissolve into pure Ti matrix when the content was not higher than 1.0 wt%, while higher content of SiO2 addition resulted in the formation of Ti5Si3 intermetallics. Si and O elements leaded to negative and positive distortion of Ti lattice, and the influencing degrees were ‑0.02 and +0.014 Å/wt% for lattice constant a, while ‑0.05 and +0.046 Å/wt% for constant c, respectively. Solid solution of Si and O would also result in the increase of hardness, which was 98.5 and 209.43 HV/wt%, respectively. When Si and O were co-exsited in Ti matrix, the negative and positive distortion cancelled each other, while the strengthening effect did not cancel but enhance each other.
Khouchaf, L.; Boinski, F.; Tuilier, M.H.; Flank, A.M.
Micro X-ray absorption near edge structure XANES and micro fluorescence experiments have been carried out using X-ray microbeam from synchrotron radiation source with high brightness to investigate the local structural evolutions of heterogeneous and natural SiO 2 submitted to alkali-silica reaction ASR process. Compared to elemental maps obtained by Environmental Scanning Electron Microscope ESEM, micro fluorescence X maps showed the diffusion of potassium cations inside the grains with higher accuracy. Si K-edge spectra show the disorder induced by the dissolution of the grain from the outside to the inside. Potassium K-edge spectra do not show significant changes around K cations. The breaking of Si-O-Si bonds and the disorder of the (SiO 4 ) n network may be affected to potassium cations
Yan Wensheng; Li Zhongrui; Sun Zhihu; Wei Shiqiang; Kolobov, A. V.
The formation mechanism of Ge nanocrystals for Ge (60 mol%) embedded in a SiO2 matrix grown on Si(001) and quartz-glass substrates was studied by fluorescence x-ray absorption fine structure (XAFS). It was found that the formation of Ge nanocrystals strongly depends on the properties of the substrate materials. In the as-prepared samples, Ge atoms exist in amorphous Ge and GeO2 phases. At the annealing temperature of 1073 K, on the quartz-glass substrate, Ge nanocrystals are only formed predominantly from the amorphous Ge phase in the as-prepared sample. However, on the Si(100) substrate the Ge nanocrystals are generated partly from amorphous Ge, and partly from GeO2 phases through the permutation reaction with Si substrate. Quantitative analysis revealed that about 10% of GeO2 in as-prepared sample permutated with Si in the wafer and formed Ge nanocrystals
Metzler, Dominik; Oehrlein, Gottlieb S; Li, Chen; Lai, C Steven; Hudson, Eric A
The evaluation of a plasma-based atomic layer etching (ALE) approach for native oxide surface removal from Si substrates is described. Objectives include removal of the native oxide while minimizing substrate damage, surface residues and substrate loss. Oxide thicknesses were measured using in situ ellipsometry and surface chemistry was analyzed by x-ray photoelectron spectroscopy. The cyclic ALE approach when used for removal of native oxide SiO 2 from a Si substrate did not remove native oxide to the extent required. This is due to the high reactivity of the silicon substrate during the low-energy (<40 eV) ion bombardment phase of the cyclic ALE approach which leads to reoxidation of the silicon surface. A modified process, which used continuously biased Ar plasma with periodic CF 4 injection, achieved significant oxygen removal from the Si surface, with some residual carbon and fluorine. A subsequent H 2 /Ar plasma exposure successfully removed residual carbon and fluorine while passivating the silicon surface. The combined treatment reduced oxygen and carbon levels to about half compared to as received silicon surfaces. The downside of this process sequence is a net loss of about 40 Å of Si. A generic insight of this work is the importance of the substrate and final surface chemistry in addition to precise etch control of the target film for ALE processes. By a fluorocarbon-based ALE technique, thin SiO 2 layer removal at the Ångstrom level can be precisely performed from an inert substrate, e.g. a thick SiO 2 layer. However, from a reactive substrate, like Si, complete removal of the thin SiO 2 layer is prevented by the high reactivity of low energy Ar + ion bombarded Si. The Si surfaces are reoxidized during the ALE ion bombardment etch step, even for very clean and ultra-low O 2 process conditions. (paper)
Yu Jiaxin; Chen Lei; Qian Linmao; Song Danlu; Cai Yong
Highlights: ► The effect of humidity on the motion behavior of Si(1 0 0)/SiO 2 pair was clarified. ► With increase in humidity, adhesion force increases slowly firstly, then sharply. ► With increase in humidity, friction force increases sharply firstly, then slowly. ► The wear degree of Si is relative to the physical state of absorbed water film. ► The tribochemical reaction of Si(1 0 0) in humid air was verified by ToF-SIMS. - Abstract: With an atomic force microscopy, the humidity-dependent nanotribology behaviors of Si(1 0 0) against SiO 2 microsphere were investigated while the relative movement translated from stick to slip. The relative humidity RH of air exhibits a strong effect on the motion behavior of Si(1 0 0)/SiO 2 pair. With the increase in RH, relative movement of Si(1 0 0)/SiO 2 pair is easier to keep into stick state, namely, the relative slip becomes more difficult to occur in a higher humidity range. The adhesion F a will increase with the increase in RH in the given humidity range. In the low RH range ( a increases very slowly. However, in relative higher RH range (>20%), F a increases very sharply once ‘liquid-like’ adsorbed water layer forms, because it increases the capillary force. The initial friction forces F t of Si(1 0 0)/SiO 2 pair also increase with the increase in RH in the given humidity range. However, different from F a , it increases sharply in the low RH range ( 30%). During the cyclic friction process, under the higher RH, relative stable tangential force is easier to be observed at higher displacement amplitude, here, the relative movement usually keeps into stick state. With the increase in RH, the surface damage of Si(1 0 0) transforms from mechanical deformation (forming hillock) to tribochemical wear (material removal). The tribochemical wear is sensitive to the absorbed water film with ‘solid-like’ structure, here, the wear volume increases drastically in this RH range (<20%); further increase of wear is
Park, Hoyyul; Bae, Dongsik
Erbium-doped SiO 2 nanoparticles have been synthesized using a reverse micelle technique combined with metal-alkoxide hydrolysis and condensation. The sizes and the morphologies of the erbium-doped SiO 2 nanoparticles could be changed by varying the molar ratio of water to surfactant. The sizes and the morphologies of the erbium-doped SiO 2 nanoparticles were examined by using a transmission electron microscope. The average size of synthesized erbium-doped SiO 2 nanoparticles was approximately 20 - 25 nm and that of the erbium particles was 3 - 5 nm. The effects of the synthesis parameters, such as the molar ratio of water to surfactant, are discussed.
Full Text Available Well-dispersed Ag nanoparticles (NPs are successfully decorated on Fe3O4@SiO2 nanorods (NRs via a facile step-by-step strategy. This method involves coating α-Fe2O3 NRs with uniform silica layer, reduction in 10% H2/Ar atmosphere at 450°C to obtain Fe3O4@SiO2 NRs, and then depositing Ag NPs on the surface of Fe3O4@SiO2 NRs through a sonochemical step. It was found that the as-prepared Ag-decorated magnetic Fe3O4@SiO2 NRs (Ag-MNRs exhibited a higher catalytic efficiency than bare Ag NPs in the degradation of organic dye and could be easily recovered by convenient magnetic separation, which show great application potential for environmental protection applications.
Mohamed, Bashir M
Abstract Background Nanomaterials such as SiO2 nanoparticles (SiO2NP) are finding increasing applications in the biomedical and biotechnological fields such as disease diagnostics, imaging, drug delivery, food, cosmetics and biosensors development. Thus, a mechanistic and systematic evaluation of the potential biological and toxic effects of SiO2NP becomes crucial in order to assess their complete safe applicability limits. Results In this study, human monocytic leukemia cell line THP-1 and human alveolar epithelial cell line A549 were exposed to a range of amorphous SiO2NP of various sizes and concentrations (0.01, 0.1 and 0.5 mg\\/ml). Key biological indicators of cellular functions including cell population density, cellular morphology, membrane permeability, lysosomal mass\\/pH and activation of transcription factor-2 (ATF-2) were evaluated utilizing quantitative high content screening (HCS) approach and biochemical techniques. Despite the use of extremely high nanoparticle concentrations, our findings showed a low degree of cytotoxicity within the panel of SiO2NP investigated. However, at these concentrations, we observed the onset of stress-related cellular response induced by SiO2NP. Interestingly, cells exposed to alumina-coated SiO2NP showed low level, and in some cases complete absence, of stress response and this was consistent up to the highest dose of 0.5 mg\\/ml. Conclusions The present study demonstrates and highlights the importance of subtle biological changes downstream of primary membrane and endocytosis-associated phenomena resulting from high dose SiO2NP exposure. Increased activation of transcription factors, such as ATF-2, was quantitatively assessed as a function of i) human cell line specific stress-response, ii) SiO2NP size and iii) concentration. Despite the low level of cytotoxicity detected for the amorphous SiO2NP investigated, these findings prompt an in-depth focus for future SiO2NP-cell\\/tissue investigations based on the combined
Full Text Available Abstract Background Nanomaterials such as SiO2 nanoparticles (SiO2NP are finding increasing applications in the biomedical and biotechnological fields such as disease diagnostics, imaging, drug delivery, food, cosmetics and biosensors development. Thus, a mechanistic and systematic evaluation of the potential biological and toxic effects of SiO2NP becomes crucial in order to assess their complete safe applicability limits. Results In this study, human monocytic leukemia cell line THP-1 and human alveolar epithelial cell line A549 were exposed to a range of amorphous SiO2NP of various sizes and concentrations (0.01, 0.1 and 0.5 mg/ml. Key biological indicators of cellular functions including cell population density, cellular morphology, membrane permeability, lysosomal mass/pH and activation of transcription factor-2 (ATF-2 were evaluated utilizing quantitative high content screening (HCS approach and biochemical techniques. Despite the use of extremely high nanoparticle concentrations, our findings showed a low degree of cytotoxicity within the panel of SiO2NP investigated. However, at these concentrations, we observed the onset of stress-related cellular response induced by SiO2NP. Interestingly, cells exposed to alumina-coated SiO2NP showed low level, and in some cases complete absence, of stress response and this was consistent up to the highest dose of 0.5 mg/ml. Conclusions The present study demonstrates and highlights the importance of subtle biological changes downstream of primary membrane and endocytosis-associated phenomena resulting from high dose SiO2NP exposure. Increased activation of transcription factors, such as ATF-2, was quantitatively assessed as a function of i human cell line specific stress-response, ii SiO2NP size and iii concentration. Despite the low level of cytotoxicity detected for the amorphous SiO2NP investigated, these findings prompt an in-depth focus for future SiO2NP-cell/tissue investigations based on the
Stepina, N.P.; Dvurechenskii, A.V.; Armbrister, V.A.; Kirienko, V.V.; Novikov, P.L.; Kesler, V.G.; Gutakovskii, A.K.; Smagina, Z.V.; Spesivtzev, E.V.
A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO 2 , have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate the nucleation of Ge NCs when being applied after thin Ge layer deposition. Growth conditions for independent change of NCs size and array density were established allowing to optimize the structure parameters required for memory device. Activation energy E = 0.25 eV was determined from the temperature dependence of NCs array density. Monte Carlo simulation has shown that the process, determining NCs array density, is the surface diffusion. Embedding of the crystalline Ge dots into silicon oxide was carried out by selective oxidation of Si(100)/SiO 2 /Ge(NCs)/poly-Si structure. MOS-capacitor obtained after oxidation showed a hysteresis in its C-V curves attributed to charge retention in the Ge dots
Boer, de M.; Dillen, van A.J.; Koningsberger, D.C.; Geus, J.W.; Kuroda, H.; Ohta, T.
The sulfidation of a well defined MoO3/SiO2 catalyst has been examd. by means of TPS, EXAFS, and TEM. The oxidic clusters in a 5.6 wt% MoO3/SiO2 catalyst are transformed into almost completely sulfided particles (MoOxSy) by O-S exchange at RT. A molybdenum-sulfido particle that resembles the MoS3
Full Text Available Tb3+-Pr3+, and Eu3+-Pr3+ ion pairs co-doped in a SiO2 matrix were prepared by a sol-gel method. Co-doping of Eu3+ and Tb3+ ions with Pr3+ in SiO2 resulted in the quenching of Eu3+ and Tb3+ emissions with increasing Pr3+ concentrations. The quenching...
Zeng, Chao; Shadman, Farhang; Sierra-Alvarez, Reyes
The extensive production and application of engineered silica nanoparticles (SiO_2 NPs) will inevitably lead to their release into the environment. Granular media filtration, a widely used process in water and wastewater treatment plants, has the potential for NP abatement. In this work, laboratory-scale column experiments were performed to study the transport and retention of SiO_2 NPs on three widely used porous materials, i.e., sand, anthracite, and granular activated carbon (GAC). Synthetic fluorescent core-shell SiO_2 NPs (83 nm) were used to facilitate NP detection. Sand showed very low capacity for SiO_2 filtration as this material had a surface with limited surface area and a high concentration of negative charge. Also, we found that the stability and transport of SiO_2 NP were strongly dependent on the ionic strength of the solution. Increasing ionic strength led to NP agglomeration and facilitated SiO_2 NP retention, while low ionic strength resulted in release of captured NPs from the sand bed. Compared to sand, anthracite and GAC showed higher affinity for SiO_2 NP capture. The superior capacity of GAC was primarily due to its porous structure and high surface area. A process model was developed to simulate NP capture in the packed bed columns and determine fundamental filtration parameters. This model provided an excellent fit to the experimental data. Taken together, the results obtained indicate that GAC is an interesting material for SiO_2 NP filtration.
Zeng, Chao; Shadman, Farhang; Sierra-Alvarez, Reyes
The extensive production and application of engineered silica nanoparticles (SiO2 NPs) will inevitably lead to their release into the environment. Granular media filtration, a widely used process in water and wastewater treatment plants, has the potential for NP abatement. In this work, laboratory-scale column experiments were performed to study the transport and retention of SiO2 NPs on three widely used porous materials, i.e., sand, anthracite, and granular activated carbon (GAC). Synthetic fluorescent core-shell SiO2 NPs (83 nm) were used to facilitate NP detection. Sand showed very low capacity for SiO2 filtration as this material had a surface with limited surface area and a high concentration of negative charge. Also, we found that the stability and transport of SiO2 NP were strongly dependent on the ionic strength of the solution. Increasing ionic strength led to NP agglomeration and facilitated SiO2 NP retention, while low ionic strength resulted in release of captured NPs from the sand bed. Compared to sand, anthracite and GAC showed higher affinity for SiO2 NP capture. The superior capacity of GAC was primarily due to its porous structure and high surface area. A process model was developed to simulate NP capture in the packed bed columns and determine fundamental filtration parameters. This model provided an excellent fit to the experimental data. Taken together, the results obtained indicate that GAC is an interesting material for SiO2 NP filtration.
Feijo, Tais Orestes; Rolim, Guilherme Koszeniewski; Radtke, Claudio; Soares, Gabriel Vieira
Full text: Graphene is a monolayer of carbon with sp 2 hybridization and hexagonal structure. Since all its area is exposed to the atmosphere, it is important to understand how graphene interacts with elements present in the atmosphere, such as hydrogen, oxygen and water, to control the processes of manufacturing . In addition, some studies show that graphene can allow storage of hydrogen for use in fuel cells, which would contribute to the use of clean energies. This study aims to understand the thermally-driven hydrogen interaction with graphene samples. We used samples of graphene deposited on SiO 2 (285 nm) films on Si and then annealed in controlled atmosphere of deuterium (D 2 , natural abundance of 0.15%) at temperatures between 200 and 1000°C. We also investigated hydrogen desorption from graphene using samples previously treated in deuterium at 600°C and afterwards annealed in nitrogen atmosphere between 200 and 1000°C. After annealings, Nuclear Reaction Analysis (NRA) was employed to quantify deuterium, where we observed a large increase in deuterium incorporation above 400°C, with an constant D incorporation until 1000°C. We also observed that the desorption of deuterium from graphene only occurred above 800°C, although D desorption from silicon oxide samples takes place already at 600°C. Raman spectroscopy analysis was performed after each thermal treatment. Results show that defects in the graphene structure increases for higher treatment temperatures in incorporation and in desorption steps. Characterization using X-Ray Photoelectron Spectroscopy (XPS) and Near Edge X-ray Absorption Fine Structure (NEXAFS) will also be presented.  A. C. Ferrari, et al., Nanoscale 7 (2015). (author)
Indrayana, I. P. T.; Julian, T.; Suharyadi, E.
The photodegradation activity of nanocomposites for 20 ppm methylene blue solution has been investigated in this work. Nanocomposites Mn0.5Zn0.5Fe2O4/SiO2 have been synthesized using coprecipitation method. The X-ray diffraction (XRD) pattern confirmed the formation of three phases in sample Mn0.5Zn0.5Fe2O4/SiO2 i.e., Mn0.5Zn0.5Fe2O4, Zn(OH)2, and SiO2. The appearance of SiO2 phase showed that the encapsulation process has been carried out. The calculated particles size of Mn0.5Zn0.5Fe2O4/SiO2 is greater than Mn0.5Zn0.5Fe2O4. Bonding analysis via vibrational spectra for Mn0.5Zn0.5Fe2O4/SiO2 confirmed the formation of bonds Me-O-Si stretching (2854.65 cm-1) and Si-O-Si asymmetric stretching (1026.13 cm-1). The optical gap energy of Mn0.5Zn0.5Fe2O4/SiO2 was smaller (2.70 eV) than Mn0.5Zn0.5Fe2O4 (3.04 eV) due to smaller lattice dislocation and microstrain that affect their electronic structure. The Mn0.5Zn0.5Fe2O4/SiO2 showed high photodegradation ability due to smaller optical gap energy and the appearance of SiO2 ligand that can easily attract dye molecules. The Mn0.5Zn0.5Fe2O4/SiO2 also showed high degradation activity even without UV light radiation. The result showed that photodegradation reaction doesn’t follow pseudo-first order kinetics.
Ammar, Sh.; Ramesh, K.; Vengadaesvaran, B.; Ramesh, S.; Arof, A.K.
Highlights: • Hybrid SiO 2 nanocomposite coatings were fabricated on mild steel. • Highest coating resistance were exhibited by coatings with 3 wt.% SiO 2 nanoparticles. • Long-term stability measurement, together with hydrophobic surface measurements, were obtained. - Abstract: The influence of SiO 2 nanoparticles on hydrophobicity and the corrosion protection capabilities of hybrid acrylic-silicone polymeric matrix have been investigated. Contact angle measurements (CA), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and energy dispersive X-ray spectroscopy (EDX) were used to study the hydrophobicity, morphology, and topography of the coatings. In addition, electrochemical impedance spectroscopy (EIS) and salt spray techniques were employed to evaluate the corrosion protection performance. A coating with 3 wt.% SiO 2 , AS 3, demonstrates significant improvement in corrosion resistance with the highest measured CA of 97.3°. Morphology and topography studies clarify the influence of nano-sized SiO 2 fillers on the surface topography and demonstrated the uniform and good distribution of the embedded SiO 2 nanoparticles within the polymeric matrix.
Full Text Available This paper aims to fabricate microhole arrays onto a silica glass via a room temperature imprint and subsequent sintering by using a monolithic SiO2-poly(vinyl alcohol (PVA nanocomposite as the silica glass precursor. The SiO2-PVA suspension was prepared from fumed silica particles and PVA, followed by drying to obtain tailored SiO2-PVA nanocomposites. The dependence of particle size of the fumed silica particles on pore size of the nanocomposite was examined. Nanocomposites prepared from 7 nm silica particles possessed suitable mesopores, whereas the corresponding nanocomposites prepared from 30 nm silica particles hardly possessed mesopores. The pore size of the nanocomposites increased as a function of decreasing pH of the SiO2-PVA suspension. As a consequence, the crack-free monolithic SiO2-PVA nanocomposite was obtained using 7 nm silica particles via the suspension at pH 3. Micropatterns were imprinted on the monolithic SiO2-PVA nanocomposite at room temperature. The imprinted nanocomposite was sintered to a transparent silica glass at 1200°C in air. The fabricated sintered glass possessed the microhole array on their surface with aspect ratios identical to the mold.
Matsuda, A; Matsuno, Y; Katayama, S; Tsuno, T [Nippon Steel Glass Co. Ltd., Tokyo (Japan); Toge, N; Minami, T [University of Osaka Prefecture, Osaka (Japan). College of Engineering
TiO2-SiO2 films prepared by the sol-gel method serves as an effective alkali passivation layer on a soda-lime-silica glass substrate and the film is superior to a sol-gel derived pure SiO2 film from the view point of weathering resistance improvement. To clarify the reason, alkali passivation mechanism of sol-gel derived TiO2-SiO2 glass films with different TiO2 contents coated on a soda-lime-silica glass substrate was studied by SIMS (secondary ion mass spectroscopy) and XPS (X-ray photoelectron spectroscopy) analyses, and compared with the results of a sol-gel derived pure SiO2 film. As a result, the following conclusions were obtained: An increase in TiO2 content in the TiO2 SiO2 film increases the sodium concentration in the film, which was induced by sodium migration from the glass substrate during the heat-treatment. Because of the presence of sodium the TiO2 -SiO2 films serve not as a barrier but as an effective getter of alkali ions and thereby effectively improve the weathering resistance Of the glass substrate. 10 refs., 6 figs.
X. F. Zeng
Full Text Available We reported the SiO2 nanopillars on microscale roughened surface on GaN-based LED to enhance light-extraction efficiency. ZnO nanoparticles were deposited on SiO2 as an etching mask before ICP etching SiO2 by successive ionic layer adsorption and reaction method (SILAR, and the different heights of SiO2 nanopillars on microroughened ITO/GaN were obtained after etching. Compared to a regular (flat surface GaN-based LED, the light output power for a LED with microroughening was increased by 33%. Furthermore, the proposed LEDs with SiO2 nanopillars on microroughened surface show the enhancement in light output power by 42.7%–49.1% at 20 mA. The increase in light output power is mostly attributed to reduction in Fresnel reflection by rough surface. The height of SiO2 nanopillars was increasing cause resulting in more rough on the microscale surface of GaN-based LEDs.
Yu, Pingsheng; Su, Liangbi; Cheng, Junhua; Zhang, Xia; Xu, Jun
The 2Bi 2 O 3 -3GeO 2 /SiO 2 glass samples have been prepared by the conventional melt quenching technique. XRD patterns, absorption spectra, excitation-emission spectra and Raman measurements were utilized to characterize the synthesized glasses. When substitute SiO 2 for GeO 2 , the 0.4Bi 2 O 3 -(0.4-0.1)GeO 2 -(0.2-0.5)SiO 2 glasses exhibit strong emission centered at about 475nm (under 300nm excitation), and the decay constants are within the scope of 20-40ns. W doping into 2Bi 2 O 3 -3SiO 2 glass could increase the emission intensity of 470nm, and the W-doped 2Bi 2 O 3 -3SiO 2 glass has shown another emission at about 433nm with much shorter decay time (near 10ns). The 2Bi 2 O 3 -3GeO 2 /SiO 2 glass system could be the possible candidate for scintillator in high energy physics applications. Copyright © 2017 Elsevier Ltd. All rights reserved.
Nadeem, K.; Traussnig, T.; Letofsky-Papst, I.; Krenn, H.; Brossmann, U.; Wuerschum, R.
Nanoparticles of NiFe 2 O 4 dispersed in SiO 2 (25 wt%) matrix were synthesized by sol-gel method using tetraethyl orthosilicate (TEOS), as a precursor for SiO 2 . The sol-gel method for nanocomposites normally provides multi-phase nanoparticles. We investigated by a synopsis of different analysis methods, X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and SQUID-magnetometry, how the various chemical phases are transformed to a single-phase spinel structure during the various stages of annealing from 300 to 900 o C. We have developed a full phase diagram of chemical phases as a function of annealing temperature. The average particle size lies in the range 16-27 nm. The chemical phases formed below 900 o C are NiFe, NiO, γ-Fe 2 O 3 , α-Fe 2 O 3 , and NiFe 2 O 4 , respectively. The role of the TEOS prepared SiO 2 matrix is to restrict the particle size in a small range in order to rule out particle size effects. In the mid-infrared, a shift of the vibrational Fe-O bond is observed from 568 to 586 cm -1 for annealing between 500 and 700 o C which indicates an increasing NiFe 2 O 4 phase formation. A systematic study of coercivity field (ranging from 32 to 200 Oe) and saturation magnetic moment (ranging from 12.2 to 32.1 emu/g) for differently annealed samples supports our findings about the evolution of single-phase NiFe 2 O 4 at 900 o C. The opposite trend of saturation magnetic moment and coercivity with respect to annealing temperature clearly separates the different phases of metallic, antiferromagnetic, and finally single-phase spinel NiFe 2 O 4 .
Carey, Patrick H., IV; Ren, Fan; Hays, David C.; Gila, Brent P.; Pearton, Stephen J.; Jang, Soohwan; Kuramata, Akito
The valence band offset at both SiO2/β-Ga2O3 and HfSiO4/β-Ga2O3 heterointerfaces was measured using X-ray photoelectron spectroscopy. Both dielectrics were deposited by atomic layer deposition (ALD) onto single-crystal β-Ga2O3. The bandgaps of the materials were determined by reflection electron energy loss spectroscopy as 4.6 eV for Ga2O3, 8.7 eV for Al2O3 and 7.0 eV for HfSiO4. The valence band offset was determined to be 1.23 ± 0.20 eV (straddling gap, type I alignment) for ALD SiO2 on β-Ga2O3 and 0.02 ± 0.003 eV (also type I alignment) for HfSiO4. The respective conduction band offsets were 2.87 ± 0.70 eV for ALD SiO2 and 2.38 ± 0.50 eV for HfSiO4, respectively.
A general study of the fabrication of the structure In 2 O 3 /SiO 2 /Si was made encompassing the problems posed during the realization of these structures. The sputtering study enabled the influence of the main parameters on layer properties to be determined. The decisive importance of clean conditions throughout fabrication (especially during sputtering) on the properties of In 2 O 3 layers and on those of the structure and its stability was revealed. However, the problem of ageing of the structure were not investigated. Finally, the construction of MOS capacitors and transistors showed that In 2 O 3 /SiO 2 /Si structures can be used in MOS circuits [fr
Uedono, Akira; Tanigawa, Shoichiro; Sugiura, Jun; Ogasawara, Makoto.
Variable-energy (0∼30 keV) positron beam studies have been carried out on 80 keV B + -implanted SiO 2 (43 nm)/Si specimens. Doppler broadening profiles of the positron annihilation as a function of the incident positron energy were shown to be quite sensitive for the detection of vacancy-type defects introduced by B + -implantation. The average depth of the defected regions was found to shift towards the surface of the specimen with increasing the dose of B + ions. This effect is attributed to the accumulation of vacancy-type defects at the SiO 2 /Si interface. Dominant defect species were identified as vacancy clusters by their annealing stage. (author)
Flesch, R.; Webster, J. D.; Nadeau, P. A.
Hydrothermal experiments were conducted on high-silica (73-75 wt% SiO2), fluid-saturated melts at 844-862°C and ca. 50 MPa using crushed glass of the Los Posos rhyolite. Water and salts including NaCl, KCl, Ca(OH)2, and CaHPO4 and HCl were added proportionally to the experiments to restrict the variability of the aluminosity of the melt. The Durango apatite, which contains 3.53 wt% F and 0.41% Cl, was added as "seeds"bearing magmatic systems.
Huan, Qing; Hu, Hao; Pan, Li-Da; Xiao, Jiang; Du, Shi-Xuan; Gao, Hong-Jun
Deposition patterns of tetracyanoquinodimethane (TCNQ) molecules on different surfaces are investigated by atomic force microscopy. A homemade physical vapour deposition system allows the better control of molecule deposition. Taking advantage of this system, we investigate TCNQ thin film growth on both SiO2 and mica surfaces. It is found that dense island patterns form at a high deposition rate, and a unique seahorse-like pattern forms at a low deposition rate. Growth patterns on different substrates suggest that the fractal pattern formation is dominated by molecule-molecule interaction. Finally, a phenomenal “two-branch" model is proposed to simulate the growth process of the seahorse pattern.
Qing, Huan; Hao, Hu; Li-Da, Pan; Jiang, Xiao; Shi-Xuan, Du; Hong-Jun, Gao
Deposition patterns of tetracyanoquinodimethane (TCNQ) molecules on different surfaces are investigated by atomic force microscopy. A homemade physical vapour deposition system allows the better control of molecule deposition. Taking advantage of this system, we investigate TCNQ thin film growth on both SiO 2 and mica surfaces. It is found that dense island patterns form at a high deposition rate, and a unique seahorse-like pattern forms at a low deposition rate. Growth patterns on different substrates suggest that the fractal pattern formation is dominated by molecule–molecule interaction. Finally, a phenomenal “two-branch” model is proposed to simulate the growth process of the seahorse pattern. (general)
Bonafos, C.; Garrido, B.; Lopez, M.; Romano-Rodriguez, A.; Gonzalez-Varona, O.; Perez-Rodriguez, A.; Morante, J.R.; Rodriguez, R.
Mn doped ZnS nanocrystals have been formed in SiO 2 layers by ion implantation and thermal annealing. The structural analysis of the processed samples has been performed mainly by Secondary Ion Mass Spectroscopy (SIMS) and Transmission Electron Microscopy (TEM). The data show the precipitation of ZnS nanocrystals self-organized into two layers parallel to the free surface. First results of the optical analysis of samples co-implanted with Mn show the presence of a yellow-green photoluminescence depending on the Mn concentration and the size of the nanocrystals, suggesting the doping with Mn of some precipitates
Yamaguchi, M.; Saito, K.; Ikushima, A.J.
The defect centers induced by ArF laser irradiation in Ge-doped SiO 2 have been investigated by the electron-spin resonance method. In order to observe formation and relaxation processes of the defects, step annealing has been carried out after the irradiation at 77 K. The thermally induced decay of the self-trapped hole (STH) and formation of the so-called Ge(2) centers have been observed with increasing temperature. The result suggests that the holes are transferred from the STH to the Ge(2)
Kluth, P.; Hoy, B.; Johannessen, B.; Dunn, S. G.; Foran, G. J.; Ridgway, M. C.
Co-Au core-shell nanocrystals (NCs) were formed by sequential ion implantation of Au and Co into thin SiO 2 . The NCs were investigated by means of transmission electron microscopy and extended x-ray absorption fine structure spectroscopy. The latter reveals a bond length expansion in the Co core compared to monatomic Co NCs. Concomitantly, a significant contraction of the bond length and a significant reduction of the effective Au-Au coordination number were observed in the Au shells. Increased Debye-Waller factors indicate significant strain in the NCs. These experimental results verify recent theoretical predictions
Kao, T. H.; Mukherjee, S.; Yang, H. D.
Magnetic Gd2O3 and non-magnetic La2O3 nanoparticles (NPs) have been synthesized together with different doping concentrations in SiO2 matrix via sol-gel route calcination at 700 °C and above. Properly annealed NP-glass composite systems show enhancement of dielectric constant and magnetodielectric effect (MDE) near room temperature, depending on superparamagnetic NPs concentrations. From application point of view, the enhancement of dielectric constant along with MDE can be achieved by tuning the NPs size through varying calcination temperature and/or increasing the doping concentration of magnetic rare earth oxide.
Highly transparent and UV-resistant superhydrophobic arrays of SiO 2-coated ZnO nanorods are prepared in a sequence of low-temperature (<150 C) steps on both glass and thin sheets of PET (2 × 2 in. 2), and the superhydrophobic nanocomposite is shown to have minimal impact on solar cell device performance under AM1.5G illumination. Flexible plastics can serve as front cell and backing materials in the manufacture of flexible displays and solar cells. © 2014 American Chemical Society.
Couty, R.; Fernandez, L.
Sodium and potassium solutions of silica with silica concentration of 1,4 mo/kg and R ms = SiO 2 /M + 2 O ratios of 4.56 to 1.6 were obtained by depolymerization of amorphous silica gel in sodium and potassium hydroxide. Solutions have been characterized by 29 Si NMR and infrared spectroscopy. The results indicated that Na + and K + exhibit the same behaviour during the depolymerization of silica. (authors). 11 refs., 4 figs., 2 tabs
Sudarsan, V.; Kulshreshtha, S.K.; Shrikhande, V.K.; Kothiyal, G.P.
Lead borosilicate glasses having general formulae (PbO) 0.5-x (SiO 2 ) 0.5 (B 2 O 3 ) x with 0.0≤x≤0.4 and (PbO) 0.5 (SiO 2 ) 0.5-y (B 2 O 3 ) y with 0.0≤y≤0.5 have been prepared by a conventional melt-quench method and characterized by 29 Si, 11 B magic angle spinning (MAS) NMR techniques and infrared spectroscopy, as regards their structural features. From 29 Si NMR results, it has been inferred that with increasing concentration of boron oxide, (PbO) 0.5-x (SiO 2 ) 0.5 (B 2 O 3 )x glasses exhibit a systematic increase in the number of Q 4 structural units of Si at the expense of Q 2 structural units, along with the formation of Si-O-B linkages. On the other hand, for (PbO) 0.5 (SiO 2 ) 0.5-y (B 2 O 3 ) y glasses, there is no direct interaction between SiO 2 and B 2 O 3 in the glass network, as revealed by the 29 Si MAS NMR studies. Boron exists in both trigonal and tetrahedral configurations for these two series of glasses and for the (PbO) 0.5 (SiO 2 ) 0.5-y (B 2 O 3 ) y series of glasses; the relative concentration of these two structural units remains almost constant with increasing B 2 O 3 concentration. In contrast, for (PbO) 0.5-x (SiO 2 ) 0.5 (B 2 O 3 ) x glasses, there is a slight increase in the number of BO 3 structural units above x = 0.2, as there is a competition between SiO 2 and B 2 O 3 for interaction with Pb 2+ , thereby leading to the formation of BO 3 structural units. For both series of glasses, the thermal expansion coefficient is found to decrease with increasing B 2 O 3 concentration, the effect being more pronounced for the (PbO) 0.5-x (SiO 2 ) 0.5 (B 2 O 3 ) x series of glasses due to the increased concentration of Q 4 structural units of silicon and better cross-linking as a result of the formation of Si-O-B-type linkages. (author)
Full Text Available Cu/x-SiO2 catalysts with 4, 10, and 20 nm silica sols as supports was produced by ammonia evaporation method and characterized. Different nano-sized silica sols as supports significantly affected the structure and catalytic properties of the copper catalysts for ethylene glycol synthesis from dimethyl oxalate. Compared with Cu/20-SiO2 and Cu/4-SiO2 catalysts, the catalytic performance and stability of Cu/10-SiO2 catalyst were greatly enhanced. The Cu/10-SiO2 catalyst showed 99.9% conversion with 94% EG selectivity and a lifetime of over 3080 h if it is calculated by industrial weight liquid hourly space velocity (WLHSV of 0.5 h−1. The Cu/10-SiO2 catalyst has one of the longest lifetimes among the catalysts and is a good alternative catalyst for this reaction. Improvement in the catalytic performance and stability of Cu/10-SiO2 is attributed to the proper SBET, Dp and larger dispersion of copper. In addition, the supports of Cu/10-SiO2 catalyst have smaller particles than that of Cu/20-SiO2; thus, the migration and growth of copper species in catalysts are restrained during the reaction.
Huang, Junjun; Zeng, Yuheng; Tan, Ruiqin; Wang, Weiyan; Yang, Ye; Dai, Ning; Song, Weijie
In this work, silicon-rich SiO 2 (SRSO) thin films were deposited at different substrate temperatures (T s ) and then annealed by rapid thermal annealing to form SiO 2 -matrix boron-doped silicon-nanocrystals (Si-NCs). The effects of T s on the micro-structure and electrical properties of the SiO 2 -matrix boron-doped Si-NC thin films were investigated using Raman spectroscopy and Hall measurements. Results showed that the crystalline fraction and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films both increased significantly when the T s was increased from room temperature to 373 K. When the T s was further increased from 373 K to 676 K, the crystalline fraction of 1373 K-annealed thin films decreased from 52.2% to 38.1%, and the dark conductivity reduced from 8 × 10 −3 S/cm to 5.5 × 10 −5 S/cm. The changes in micro-structure and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films were most possibly due to the different amount of Si-O 4 bond in the as-deposited SRSO thin films. Our work indicated that there was an optimal T s , which could significantly increase the crystallization and conductivity of Si-NC thin films. Also, it was illumined that the low-resistivity SiO 2 -matrix boron-doped Si-NC thin films can be achieved under the optimal substrate temperatures, T s .
Hsiang, Hsing-I.; Chang, Yu-Lun; Chen, Chi-Yu; Yen, Fu-Su
Transparent ultraviolet curable nano-composite coatings consisting of nano-sized SiO 2 and acrylate resin have been developed to improve the abrasion resistance of organic polymers. The nano-sized SiO 2 particles were surface-modified using various amounts of 3-methacryloxypropyltrimethoxysilane. The 3-methacryloxypropyltrimethoxysilane concentration effects on the surface morphology and abrasion resistance of the transparent SiO 2 /ultraviolet-curable resin nano-composites were investigated using scanning electron microscopy, atomic force microscopy, and ultraviolet-visible spectrophotometer. The results showed that as the 3-methacryloxypropyltrimethoxysilane/SiO 2 weight ratio increased from 0.2 to 0.6, the dispersion, compatibility and cross-linking density between the 3-methacryloxypropyltrimethoxysilane-modified SiO 2 particles and acrylate resin were improved, leading to an increase in abrasion resistance. However, as the 3-methacryloxypropyltrimethoxysilane/SiO 2 weight ratio was increased to 1.5, the additional 3-methacryloxypropyltrimethoxysilane may exceed that needed to fill the pores with the probability of SiO 2 nano-particles existing on the coating surface was lower than that for samples with a 3-methacryloxypropyltrimethoxysilane/SiO 2 weight ratio of 0.6. This produced a decrease in abrasion resistance.
Ensafi, Ali A.; Zandi-Atashbar, N.; Rezaei, B.; Ghiaci, M.; Taghizadeh, M.
Highlights: • Silver nanoparticles decorated carboxylates functionalized SiO 2 were prepared. • Ligands are bonding to silica support as SiO 2 –pro–NH 2 and SiO 2 –pro–NH–cyanuric–NH 2 . • These nanomaterials were used as electrochemical sensors for H 2 O 2 and glucose detection. • H 2 O 2 and glucose could be detected as low as 0.094 and 0.33 μmol L −1 , respectively. - Abstract: Here, two different nanocomposites are prepared based on the decoration of silver nanoparticles (AgNPs) on carboxylated SiO 2 . SiO 2 was functionalized with two different carboxylate ligands to stabilize silver nanoparticles on them, using two different organic bondings. Then, AgNPs were decorated successfully on the surface of the functionalized SiO 2 . The functionalized SiO 2 and AgNPs-functionalized SiO 2 were characterized using Fourier transform infrared spectroscopy, elemental analyses, and Transmission electron microscopy (TEM). For further characterization, the generated nanoparticles were employed as modifiers in the preparation of carbon paste electrodes (CPEs). Then, cyclic voltammetry and electrochemical impedance spectroscopy were used to study their electrochemical behavior. The electrochemical data exhibited that the modifications of CPE led to easier electron transfers rather than the bare and unmodified SiO 2 /CPE due to the presence of functionalized SiO 2 in accompany with electrocatalytic effects of the decorated silver nanoparticles. Furthermore, the modified–CPEs were examined as non–enzymatic H 2 O 2 and glucose sensors using electrochemical techniques including cyclic voltammetry and hydrodynamic chronoamperometric. Electrochemical results represented that the modified-CPE is efficient and sensitive for H 2 O 2 and glucose detection as low as 0.094 and 0.33 μmol L −1 , respectively. At last, the practical applications of these sensors were also evaluated by analyzing H 2 O 2 and glucose in the presence of common interfering species
Ningthoujam, R.S.; Sudarsan, V.; Kulshreshtha, S.K.
Re dispersible SnO 2 nanoparticles with and without Eu 3+ doping nanoparticles were prepared at 185 deg C by the urea hydrolysis of Sn 4+ in ethylene glycol medium. X-ray diffraction and 119 Sn MAS NMR studies of these particles revealed that these nanoparticles are crystalline with Cassiterite structure having an average crystallite size of 7 nm. Undoped SnO 2 gave a emission peak centered around 470 nm characteristic of the traps present in the nanoparticles. For Eu 3+ doped samples, emission around 590 and 615 nm was observed on both direct excitation as well as indirect excitation through traps, indicating that there is an energy transfer between the traps present in the nanoparticles and Eu 3+ ions. The asymmetric ratio of luminescence (relative intensity ratio of 590 to 615 nm transitions) has been found to be 1.2. For SnO 2 :Eu(5%)-SiO 2 nanoparticles, the asymmetric ratio of luminescence change significantly indicating the formation of nanoparticles with SnO 2 :Eu(5%) core covered with SiO 2 shell. (author)
Full Text Available En este trabajo se estudió la velocidad de reacción del carbazol sobre catalizadores NiMo soportados sobre Al2O3 modificada superficialmente con SiO2 (0 y 10 % en peso de SiO2 en el soporte. Los catalizadores fueron evaluados en un reactor intermitente a cuatro temperaturas (287, 300, 312 y 325oC, presión de 4.0 MPa y relación molar hidrogeno/carbazol de 2400. A partir de los resultados experimentales se realizó un estudio cinético utilizando ecuaciones del tipo Langmuir-Hinshelwood (L-H. Luego, los parámetros cinéticos fueron estimados mediante la minimización de Powell (programa Scientist de MicroMath. Los resultados muestran que el catalizador con sílice (NiMo-SAC 10 alcanza una mayor actividad para la HDN de carbazol debido a que presenta un mayor número de sitios activos (valor de A, así como una menor fuerza de adsorción entre el reactante y la superficie catalítica (valor de KN, lo cual posiblemente favorece una mejor regeneración de sitios activos.
Adamiak, Joanna; Kalinowska-Alichnewicz, Dorota; Szadkowski, Michał; Skupiński, Wincenty
A new catalyst, H(3)PO(4)/MoO(3)/SiO(2), was prepared by modification of MoO(3)/SiO(2) using phosphoric acid. The characterization of the catalyst was performed using Infrared and Raman Spectroscopy, potentiometric titration and nitrogen adsorption-desorption methods. Molybdenum oxides were identified along with phosphomolybdic acid and polymolybdates on the modified surface. The suitability of the catalysts for toluene and chlorobenzene nitration in continuous process was examined. Toluene is effectively nitrated to dinitrotoluene (DNT) in one-stage process (96 wt.% of DNT in the product) and in mild conditions i.e. at room temperature and only with ten-fold excess of nitric acid. In chlorobenzene nitration only twelve-fold excess of nitric acid is needed to obtain as high yield as 95 wt.%. Most importantly, the novel catalysts we have developed, provide the opportunity for sulfuric acid- free nitration of aromatic compounds. Copyright © 2011 Elsevier B.V. All rights reserved.
Full Text Available A glancing angle deposition (GLAD technique was used to generate SiO2 nanorods on a glass substrate to fabricate a low-cost superhydrophobic functional nanostructured surface. GLAD-deposited SiO2 nanorod structures were fabricated using various deposition rates, substrate rotating speeds, oblique angles, and deposition times to analyze the effects of processing conditions on the characteristics of the fabricated functional nanostructures. The wettability of the surface was measured after surface modification with a self-assembled monolayer (SAM. The measured water contact angles were primarily affected by substrate rotation speed and oblique angle because the surface fraction of the GLAD nanostructure was mainly affected by these parameters. A maximum contact angle of 157° was obtained from the GLAD sample fabricated at a rotation speed of 5 rpm and an oblique angle of 87°. Although the deposition thickness (height of the nanorods was not a dominant factor for determining the wettability, we selected a deposition thickness of 260 nm as the optimum processing condition based on the measured optical transmittance of the samples because optically transparent films can serve as superhydrophobic functional nanostructures for optical applications.
Full Text Available In this paper effect of SiO2 nanoparticles was investigated on potato starch films. Potato starch films were prepared by casting method with addition of nano-silicon dioxide and a mixture of sorbitol/glycerol (weight ratio of 3 to 1 as plasticizers. SiO2 nanoparticles incorporated to the potato starch films at different concentrations 0, 1, 2, 3, and 5% of total solid, and the films were dried under controlled conditions. Physicochemical properties such as water absorption capacity (WAC, water vapor permeability (WVP and mechanical properties of the films were measured. Results show that by increasing the concentration of silicon dioxide nanoparticles, mechanical properties of films can be improved. Also incorporation of silicon dioxide nanoparticles in the structure of biopolymer decrease permeability of the gaseous molecules such as water vapor. In summary, addition of silicon dioxide nanoparticles improves functional properties of potato starch films and these bio Nano composites can be used in food packaging.
Hamid, K. A.; Azmi, W. H.; Nabil, M. F.; Mamat, R.
The need to study hybrid nanofluid properties such as thermal conductivity has increased recently in order to provide better understanding on nanofluid thermal properties and behaviour. Due to its ability to improve heat transfer compared to conventional heat transfer fluids, nanofluids as a new coolant fluid are widely investigated. This paper presents the thermal conductivity of TiO2-SiO2 nanoparticles dispersed in ethylene glycol (EG)-water. The TiO2-SiO2 hybrid nanofluids is measured for its thermal conductivity using KD2 Pro Thermal Properties Analyzer for concentration ranging from 0.5% to 3.0% and temperature of 30, 50 and 70°C. The results show that the increasing in concentration and temperature lead to enhancement in thermal conductivity at range of concentration studied. The maximum enhancement is found to be 22.1% at concentration 3.0% and temperature 70°C. A new equation is proposed based on the experiment data and found to be in good agreement where the average deviation (AD), standard deviation (SD) and maximum deviation (MD) are 1.67%, 1.66% and 5.13%, respectively.
Wang, Hai; Huang, Jun; Wang, Chao; Li, Dapeng; Ding, Liyun; Han, Yun
Aminated-CoFe2O4/SiO2 magnetic nanoparticles (NPs) were prepared from primary silica particles using modified StÖber method. Glucose oxidase (GOD) was immobilized on CoFe2O4/SiO2 NPs via cross-linking with glutaraldehyde (GA). The optimal immobilization condition was achieved with 1% (v/v) GA, cross-linking time of 3 h, solution pH of 7.0 and 0.4 mg GOD (in 3.0 mg carrier). The immobilized GOD showed maximal catalytic activity at pH 6.5 and 40 °C. After immobilization, the GOD exhibited improved thermal, storage and operation stability. The immobilized GOD still maintained 80% of its initial activity after the incubation at 50 °C for 25 min, whereas free enzyme had only 20% of initial activity after the same incubation. After kept at 4 °C for 28 days, the immobilized and free enzyme retained 87% and 40% of initial activity, respectively. The immobilized GOD maintained approximately 57% of initial activity after reused 7 times. The KM (Michaelis-Menten constant) values for immobilized GOD and free GOD were 14.6 mM and 27.1 mM, respectively.
Ershov, A. V.; Chugrov, I. A.; Tetelbaum, D. I.; Mashin, A. I.; Pavlov, D. A.; Nezhdanov, A. V.; Bobrov, A. I.; Grachev, D. A.
The alternate vacuum evaporation of SiO and SiO 2 from separate sources is used to produce amorphous a-SiO x /SiO 2 multilayer nanoperiodic structures with periods of 5–10 nm and a number of layers of up to 64. The effect of annealing at temperatures T a = 500–1100°C on the structural and optical properties of the nanostructures is studied. The results of transmission electron microscopy of the samples annealed at 1100°C indicate the annealing-induced formation of vertically ordered quasiperiodic arrays of Si nanocrystals, whose dimensions are comparable to the a-SiO x -layer thickness in the initial nanostructures. The nanostructures annealed at 1100°C exhibit size-dependent photoluminescence in the wavelength range 750–830 nm corresponding to Si nanocrystals. The data on infrared absorption and Raman scattering show that the thermal evolution of structural and phase state of the SiO x layers with increasing annealing temperature proceeds through the formation of amorphous Si nanoinclusions with the subsequent formation and growth of Si nanocrystals.
Full Text Available Using first-principles methods, we generate an amorphous SiO2/4H-SiC interface with a transition layer. Based this interface model, we investigate the structural and electronic properties of the interfacial transition layer. The calculated Si 2p core-level shifts for this interface are comparable to the experimental data, indicating that various SiCxOy species should be present in this interface transition layer. The analysis of the electronic structures reveals that the tetrahedral SiCxOy structures cannot introduce any of the defect states at the interface. Interestingly, our transition layer also includes a C-C=C trimer and SiO5 configurations, which lead to the generation of interface states. The accurate positions of Kohn-Sham energy levels associated with these defects are further calculated within the hybrid functional scheme. The Kohn-Sham energy levels of the carbon trimer and SiO5 configurations are located near the conduction and valence band of bulk 4H-SiC, respectively. The result indicates that the carbon trimer occurred in the transition layer may be a possible origin of near interface traps. These findings provide novel insight into the structural and electronic properties of the realistic SiO2/SiC interface.
Yamamoto, Shunsuke; Kitanaka, Takahisa; Miyashita, Tokuji; Mitsuishi, Masaya
We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO2 ultra-thin films. The SiO2 film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)∣SiO2∣PEDOT:PSS architecture show good resistive switching performance with set–reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO2 film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS∣SiO2 interface.
Cao, Houbao; Du, Pingfan; Song, Lixin; Xiong, Jie; Yang, Junjie; Xing, Tonghai; Liu, Xin; Wu, Rongrong; Wang, Minchao; Shao, Xiaoli
Graphical abstract: - Highlights: • The core–sheath TiO 2 /SiO 2 nanofibers were fabricated by co-electrospinning technique. • The catalytic property of nanofibers with different sheath thickness was studied. • The potential methods of improving catalytic efficiency are suggested. - Abstract: In this paper, core/sheath TiO 2 /SiO 2 nanofibers with tunable sheath thickness were directly fabricated via a facile co-electrospinning technique with subsequent calcination at 500 °C. The morphologies and structures of core/sheath TiO 2 /SiO 2 nanofibers were characterized by TGA, FESEM, TEM, FTIR, XPS and BET. It was found that the 1D core/sheath nanofibers are made up of anatase–rutile TiO 2 core and amorphous SiO 2 sheath. The influences of SiO 2 sheath and its thickness on the photoreactivity were evaluated by observing photo-degradation of methylene blue aqueous solution under the irradiation of UV light. Compared with pure TiO 2 nanofibers, the core/sheath TiO 2 /SiO 2 nanofibers performed a better catalytic performance. That was attributed to not only efficient separation of hole–electron pairs resulting from the formation of heterojunction but also larger surface area and surface silanol group which will be useful to provide higher capacity for oxygen adsorption to generate more hydroxyl radicals. And the optimized core/sheath TiO 2 /SiO 2 nanofibers with a sheath thickness of 37 nm exhibited the best photocatalytic performance
Yang, Guangbin; Ma, Hongxia; Yu, Laigui; Zhang, Pingyu
SiO(2) nanoparticles capped with gamma-aminopropyltrimethoxysilane were doped into polyelectrolyte (poly(allylamine hydrochloride), PAH, and poly(acrylic acid), PAA) multilayer films via spin-assisted layer-by-layer self-assembly. The resulting as-prepared multilayer films were heated at a proper temperature to generate cross-linked composite films with increased adhesion to substrates. The tribological behavior of the multilayer films was evaluated on a microtribometer. It was found that SiO(2)-doped composite films had better wear resistance than pure polyelectrolyte multilayers, possibly because doped SiO(2) nanoparticles were capable of enhancing load-carrying capacity and had "miniature ball bearings" effect. Moreover, heat-treatment had significant effect on the morphology of the composite films. Namely, heat-treated (SiO(2)/PAA)(9) film had a larger roughness than the as-prepared one, due to heat-treatment-induced agglomeration of SiO(2) nanoparticles and initiation of defects. However, heat-treated (PAH/PAA)(3)/(SiO(2)/PAA)(3)(PAH/PAA)(3) film had greatly reduced roughness than the as-prepared one, and it showed considerably improved wear resistance as well. This could be closely related to the "sandwich-like" structure of the composite multilayer film. Namely, the outermost strata of composite multilayer film were able to eliminate defects associated with the middle strata, allowing nanoparticles therein to maintain strength and robustness while keeping soft and fluid-like exposed surface. And the inner strata were well anchored to substrate and acted as an initial "bed" for SiO(2) nanoparticles to be inhabited, resulting in good antiwear ability.
Xu, Z.J.; Tian, Y.L.; Liu, H.L.; Du, Z.Q.
Highlights: • We studied the cotton finishing with TiO 2 /SiO 2 based on ionic cross-linking method. • The samples treated with CHTAC had lower value of whiteness. • The samples treated with BTCA achieved higher crease recovery angle and lower tensile strength. • The ionic cross-linking treatment (CHTAC + BTCA + TiO 2 /SiO 2 ) was better than with TiO 2 /SiO 2 sol alone. - Abstract: Cotton fabric was successfully modified by 3-chloro-2-hydroxypropyl trimethyl ammonium chloride (CHTAC), 1,2,3,4-butanetetracarboxylic acid (BTCA) and TiO 2 /SiO 2 sol. Self-cleaning characteristic was investigated using a Color Measuring and Matching System with 6 h sunlight irradiation. And the stability of TiO 2 /SiO 2 coatings was explored by measuring the washing fastness and wrinkle resistance of treated cotton samples. In addition, whiteness index, crease recovery angle and tensile strength retention (%) of treated samples were evaluated. Moreover, the morphology, structure change and crystallinity of samples were observed by scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD), respectively. The results revealed that the samples treated with CHTAC had lower value of whiteness index as compared with original cotton fabric. It was also found that samples treated with BTCA achieved higher crease recovery angle and lower tensile strength. Moreover, the treatment of CHTAC and BTCA had adverse effect on the crystallinity of cotton samples, as treated samples had lower crystallinity in comparison with raw cotton fabrics. Nevertheless, the stability of self-cleaning coatings was better for samples treated with ionic cross-linking treatment (CHTAC + BTCA + TiO 2 /SiO 2 ) than samples treated with TiO 2 /SiO 2 sol alone. Furthermore, compared with original samples the UV-blocking property of ionic cross-linking treated samples was obviously enhanced
Wu, Facai; Si, Shuyao; Shi, Tuo; Zhao, Xiaolong; Liu, Qi; Liao, Lei; Lv, Hangbing; Long, Shibing; Liu, Ming
Pt/SiO2:metal nanoparticles/Pt sandwich structure is fabricated with the method of metal ion (Ag) implantation. The device exhibits multilevel storage with appropriate R off/R on ratio, good endurance and retention properties. Based on transmission electron microscopy and energy dispersive spectrometer analysis, we confirm that Pt nanoparticles are spurted into SiO2 film from Pt bottom electrode by Ag implantation; during electroforming, the local electric field can be enhanced by these Pt nanoparticles, meanwhile the Ag nanoparticles constantly migrate toward the Pt nanoparticles. The implantation induced nanoparticles act as trap sites in the resistive switching layer and play critical roles in the multilevel storage, which is evidenced by the negative differential resistance effect in the current-voltage (I-V) measurements.
Azadi, Mahboobeh; Zolfaghari, Mehrdad; Rezanezhad, Saeid; Azadi, Mohammad
This study has been presented with mechanical properties of aluminum matrix composites, reinforced by SiO2 nano-particles. The stir casting method was employed to produce various aluminum matrix composites. Different composites by varying the SiO2 nano-particle content (including 0.5 and 1 weight percents) and two dispersion methods (including ball-milling and pre-heating) were made. Then, the density, the hardness, the compression strength, the wear resistance and the microstructure of nano-composites have been studied in this research. Besides, the distribution of nano-particles in the aluminum matrix for all composites has been also evaluated by the field emission scanning electron microscopy (FESEM). Obtained results showed that the density, the elongation and the ultimate compressive strength of various nano-composites decreased by the presence of SiO2 nano-particles; however, the hardness, the wear resistance, the yield strength and the elastic modulus of composites increased by auditioning of nano-particles to the aluminum alloy. FESEM images indicated better wetting of the SiO2 reinforcement in the aluminum matrix, prepared by the pre-heating dispersion method, comparing to ball-milling. When SiO2 nano-particles were added to the aluminum alloy, the morphology of the Si phase and intermetallic phases changed, which enhanced mechanical properties. In addition, the wear mechanism plus the friction coefficient value were changed for various nano-composites with respect to the aluminum alloy.
Truyen, Nguyen Xuan; Ohta, Akio; Makihara, Katsunori; Ikeda, Mitsuhisa; Miyazaki, Seiichi
The control of chemical composition and bonding features at a SiO2/GaN interface is a key to realizing high-performance GaN power devices. In this study, an ∼5.2-nm-thick SiO2 film has been deposited on an epitaxial GaN(0001) surface by remote O2-plasma-enhanced chemical vapor deposition (O2-RPCVD) using SiH4 and Ar/O2 mixture gases at a substrate temperature of 500 °C. The depth profile of chemical structures and electronic defects of the O2-RPCVD SiO2/GaN structures has been evaluated from a combination of SiO2 thinning examined by X-ray photoelectron spectroscopy (XPS) and the total photoelectron yield spectroscopy (PYS) measurements. As a highlight, we found that O2-RPCVD is effective for fabricating an abrupt SiO2/GaN interface.
Erlebach, Andreas; Thieme, Katrin; Sierka, Marek; Rüssel, Christian
Solid solutions of SiO 2 and B 2 O 3 in Li 2 O·2SiO 2 are synthesized and characterized for the first time. Their structure and crystallization mechanisms are investigated employing a combination of simulations at the density functional theory level and experiments on the crystallization of SiO 2 and B 2 O 3 doped lithium disilicate glasses. The remarkable agreement of calculated and experimentally determined cell parameters reveals the preferential, kinetically controlled incorporation of [SiO 4 ] and [BO 4 ] at the Li + lattice sites of the Li 2 O·2SiO 2 crystal structure. While the addition of SiO 2 increases the glass viscosity resulting in lower crystal growth velocities, glasses containing B 2 O 3 show a reduction of both viscosities and crystal growth velocities. These observations could be rationalized by a change of the chemical composition of the glass matrix surrounding the precipitated crystal phase during the course of crystallization, which leads to a deceleration of the attachment of building units required for further crystal growth at the liquid-crystal interface.
Kumar, Vijay Bhooshan; Annamanedi, Madhavi; Prashad, Muvva Durga; Arunasree, Kalle M.; Mastai, Yitzhak; Gedanken, Aharon; Paik, Pradip
This work presents a new synthesis of mesoporous SiO 2 –ZnO composite nanocapsules with sizes of 90–150 nm and represents their applications in encapsulation of small biomolecules (fluorescent molecules, drugs, and DNA) for uses in medical biotechnology (e.g., drug and gene delivery) for the first time. The nanocapsule size and morphology have been confirmed through the HRSEM and HRTEM. The mesoporous structure of the novel materials has been confirmed through both BET and HRTEM, and the pore diameter observed to be ca. 2–8 nm with an average diameter of 5.1 nm. The BET surface area of mesoporous SiO 2 –ZnO was found to be ∼230 m 2 g −1 . Three different types of pores were detected through HRTEM: type-I, normal pores in silica matrix, pore with ZnO nanoparticles at the boundary (type-II) and type-III, the pores with tiny ZnO nanoparticles (∼5–7 nm) inside them. To demonstrate the biocompatibility and cell viability of the nanocapsules, normal and cancerous lymphocyte cells have been chosen and investigated in a systematic way. Fluorescent dye (Rhodamine 6G), anticancer drug e.g., Doxorubicin (DOX) were loaded in all types of pores, and EtBr-labeled DNA molecules were loaded efficiently into the mesopores of second and third types of the composite nanocapsules to manifest the characteristic of mesoporous, and to find out its loading efficacy. The release kinetics of Rhodamine 6G and DOX were studied. The results highlight the potential of novel functional mesoporous SiO 2 –ZnO nanoparticles for using as the carrier of drugs and formation of “SiOZO-plex”, a complex of mesoporous SiO 2 –ZnO with DNA for gene delivery applications.Graphical Abstract
Antonsson, E; Langer, B; Halfpap, I; Gottwald, J; Rühl, E
In order to gain quantitative information on the surface composition of nanoparticles from X-ray photoelectron spectroscopy, a detailed understanding of photoelectron transport phenomena in these samples is needed. Theoretical results on the elastic and inelastic scattering have been reported, but a rigorous experimental verification is lacking. We report in this work on the photoelectron angular distribution from free SiO 2 nanoparticles (d = 122 ± 9 nm) after ionization by soft X-rays above the Si 2p and O 1s absorption edges, which gives insight into the relative importance of elastic and inelastic scattering channels in the sample particles. The photoelectron angular anisotropy is found to be lower for photoemission from SiO 2 nanoparticles than that expected from the theoretical values for the isolated Si and O atoms in the photoelectron kinetic energy range 20-380 eV. The reduced angular anisotropy is explained by elastic scattering of the outgoing photoelectrons from neighboring atoms, smearing out the atomic distribution. Photoelectron angular distributions yield detailed information on photoelectron elastic scattering processes allowing for a quantification of the number of elastic scattering events the photoelectrons have undergone prior to leaving the sample. The interpretation of the experimental photoelectron angular distributions is complemented by Monte Carlo simulations, which take inelastic and elastic photoelectron scattering into account using theoretical values for the scattering cross sections. The results of the simulations reproduce the experimental photoelectron angular distributions and provide further support for the assignment that elastic and inelastic electron scattering processes need to be considered.
Veith, Lothar; Vennemann, Antje; Breitenstein, Daniel; Engelhard, Carsten; Wiemann, Martin; Hagenhoff, Birgit
The direct detection of nanoparticles in tissues at high spatial resolution is a current goal in nanotoxicology. Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) is widely used for the direct detection of inorganic and organic substances with high spatial resolution but its capability to detect nanoparticles in tissue sections is still insufficiently explored. To estimate the applicability of this technique for nanotoxicological questions, comparative studies with established techniques on the detection of nanoparticles can offer additional insights. Here, we compare ToF-SIMS imaging data with sub-micrometer spatial resolution to fluorescence microscopy imaging data to explore the usefulness of ToF-SIMS for the detection of nanoparticles in tissues. SiO 2 nanoparticles with a mean diameter of 25 nm, core-labelled with fluorescein isothiocyanate, were intratracheally instilled into rat lungs. Subsequently, imaging of lung cryosections was performed with ToF-SIMS and fluorescence microscopy. Nanoparticles were successfully detected with ToF-SIMS in 3D microanalysis mode based on the lateral distribution of SiO 3 - (m/z 75.96), which was co-localized with the distribution pattern that was obtained from nanoparticle fluorescence. In addition, the lateral distribution of protein (CN - , m/z 26.00) and phosphate based signals (PO 3 - , m/z 78.96) originating from the tissue material could be related to the SiO 3 - lateral distribution. In conclusion, ToF-SIMS is suitable to directly detect and laterally resolve SiO 2 nanomaterials in biological tissue at sufficient intensity levels. At the same time, information about the chemical environment of the nanoparticles in the lung tissue sections is obtained.
Stavarache, Ionel; Lepadatu, Ana-Maria; Stoica, Toma; Ciurea, Magdalena Lidia
Ge–SiO 2 films with high Ge/Si atomic ratio of about 1.86 were obtained by co-sputtering of Ge and SiO 2 targets and subsequently annealed at different temperatures between 600 and 1000 °C in a conventional furnace in order to show how the annealing process influences the film morphology concerning the Ge nanocrystal and/or amorphous nanoparticle formation and to study their electrical behaviour. Atomic force microscopy (AFM) imaging, Raman spectroscopy and electrical conductance measurements were performed in order to find out the annealing effect on the film surface morphology, as well as the Ge nanoparticle formation in correlation with the hopping conductivity of the films. AFM images show that the films annealed at 600 and 700 °C present a granular surface with particle height of about 15 nm, while those annealed at higher temperatures have smoother surface. The Raman investigations evidence Ge nanocrystals (including small ones) coexisting with amorphous Ge in the films annealed at 600 °C and show that almost all Ge is crystallized in the films annealed at 700 °C. The annealing at 800 °C disadvantages the Ge nanocrystal formation due to the strong Ge diffusion. This transition in Ge nanocrystals formation process by annealing temperature increase from 700 to 800 °C revealed by AFM and Raman spectroscopy measurements corresponds to a change in the electrical transport mechanism. Thus, in the 700 °C annealed films, the current depends on temperature according to a T −1/2 law which is typical for a tunnelling mechanism between neighbour Ge nanocrystals. In the 800 °C annealed films, the current–temperature characteristic has a T −1/4 dependence showing a hopping mechanism within an electronic band of localized states related to diffused Ge in SiO 2 .
Xiong, Dehua; Cheng, Jinshu; Li, Hong
The crystallization behavior and microstructure of R 2 O-Al 2 O 3 -SiO 2 (R means K, Na and Li) glass were investigated by means of differential scanning calorimeter (DSC), X-ray diffraction (XRD) and scanning electron microscopy (SEM). The crystallization kinetic parameters including the crystallization apparent activation energy (E a ), the Avrami parameter (n), glass transition temperature (T g ) and the activity energy of glass transition (E t ) were also measured with different methods. The results have shown that: the DSC traces of composition A parent glass have two different precipitation crystallization peaks corresponding to E a1 (A) = 151.4 kJ/mol (Li 2 SiO 3 ) and E a2 (A) = 623.1 kJ/mol (Li 2 Si 2 O 5 ), the average value of n = 1.70 (Li 2 Si 2 O 5 ) for the surface crystallization and E t (A) = 202.8 kJ/mol. And E a (B) = 50.7 kJ/mol (Li 2 SiO 3 ), the average value of n = 3.89 (Li 2 SiO 3 ) for the bulk crystallization and E t (B) = 220.4 kJ/mol for the composition B parent glass. Because of the content of R 2 O is bigger than composition A, composition B parent glass has a lower E a , T g and a larger n, E t .
Full Text Available The Bi2O3-SiO2 (BS glass-ceramics were prepared by melt-quench technique, and the crystallization kinetics and phase transformation behavior were investigated in accordance with Kissinger and Johson-Mehl-Avrami equation, DSC, XRD and SEM. The results show that in the heat treatment process (or termed as re-crystallizing process Bi2SiO5 and Bi4Si3O12 crystals were found consequently. Respectively, the crystallization activation energies of the two crystals are Ep1=14.8kJ/mol and Ep2=34.1kJ/mol. And the average crystallization index of n1=1.73 and n2=1.38 suggested volume nucleation, one-dimensional growth and surface nucleation, one-dimensional growth from surface to the inside respectively. The meta-stable needle-like Bi2SiO5 crystals are easily to be transformed into stable prismatic Bi4Si3O12 crystals. By quenching the melt and hold in 850°C for 1h, the homogenous single Bi4Si3O12 crystals were found in the polycrystalline phase of the BS glassceramics system.
Thermadam, S. Puthen; Bhagat, S.K.; Alford, T.L.; Sakaguchi, Y.; Kozicki, M.N.; Mitkova, M.
This paper presents a study of Cu diffusion at various temperatures in thin SiO 2 films and the influence of diffusion conditions on the switching of Programmable Metallization Cell (PMC) devices formed from such Cu-doped films. Film composition and diffusion products were analyzed using secondary ion mass spectroscopy, Rutherford backscattering spectrometry, X-ray diffraction and Raman spectroscopy methods. We found a strong dependence of the diffused Cu concentration, which varied between 0.8 at.% and 10 -3 at.%, on the annealing temperature. X-ray diffraction and Raman studies revealed that Cu does not react with the SiO 2 network and remains in elemental form after diffusion for the annealing conditions used. PMC resistive memory cells were fabricated with such Cu-diffused SiO 2 films and device performance, including the stability of the switching voltage, is discussed in the context of the material characteristics.
Bonafos, C.; Ben-Assayag, G.; Groenen, J.; Carrada, M.; Spiegel, Y.; Torregrosa, F.; Normand, P.; Dimitrakis, P.; Kapetanakis, E.; Sahu, B. S.; Slaoui, A.
Plasma Immersion Ion Implantation (PIII) is a promising alternative to beam line implantation to produce a single layer of nanocrystals (NCs) in the gate insulator of metal-oxide semiconductor devices. We report herein the fabrication of two-dimensional Si-NCs arrays in thin SiO 2 films using PIII and rapid thermal annealing. The effect of plasma and implantation conditions on the structural properties of the NC layers is examined by transmission electron microscopy. A fine tuning of the NCs characteristics is possible by optimizing the oxide thickness, implantation energy, and dose. Electrical characterization revealed that the PIII-produced-Si NC structures are appealing for nonvolatile memories
Huang, Ching-Chien; Jiang, Ai-Hua; Hung, Yung-Hsiung; Liou, Ching-Hsuan; Wang, Yi-Chen; Lee, Chi-Ping; Hung, Tong-Yin; Shaw, Chun-Chung; Kuo, Ming-Feng; Cheng, Chun-Hu
An experiment was carried out to investigate the influence of CaCO3 and SiO2 additives on the magnetic and physical properties of M-type Sr ferrites by changing experimental parameters such as the additive composition and Ca/Si ratio. Specimens were prepared by conventional ceramic techniques. It was found that the magnetic properties (Br = 4.42 kG, iHc = 3.32 kOe and (BH)max = 4.863 MGOe) were considerably improved upon adding CaCO3 = 1.1% and SiO2 = 0.4 wt% together with Co3O4, and the mechanical properties thereof were acceptable for motor applications. It was revealed that CaCO3 and SiO2 additives led to an upswing in the magnetic properties via the enhancement of uniform grain growth, particle alignment, and the densification of Sr ferrite.
Salas J, Ch. J.; Cruz V, C.; Bernal, R.; Castano, V. M.
Full text: Due to the increasing use of ionizing radiations, is necessary to monitor the radiation fields and exposure doses in facilities in which they are used. Different facilities or applications involve the use of different radiation and doses, and the sort of needed dosimetry also varies. Sometimes a conventional thermoluminescence (Tl) dosimetry satisfy the requirements since the record of the accumulated dose in a time interval is enough, but other cases could require for real-time measurement of a radiation field, being required a non-Tl dosimetric technique. On the other hand, different applications involve the use of different dose ranges, and so dosimeters with different sensitivities are needed. To solve the diverse needs of radiation detectors and dosimeters, a lot of phosphors materials has been characterized concerning their dosimetric capabilities. For medical application, biocompatible materials are desirable. In this work, we present experimental evidence that Sol-Gel synthesized SiO 2 and SiO 2 :Eu phosphors exhibit Tl glow curves composed by the superposition of several individual glow peaks each located at different temperature ranging from values below 100 up to temperatures greater than 400 degrees C, whose relative sensitivities can be modified by subjecting the phosphors to different thermal annealing. By modulating the relative intensities of the individual Tl peaks, glow curves with different shapes are obtained in such a way that SiO 2 and SiO 2 :Eu can be used to develop dosimeters useful for different dose ranges, and for both, conventional thermoluminescence dosimetry and non-thermoluminescence afterglow-based) dosimetry. (Author)
Full Text Available C-A-S-H (CaO-Al2O3-SiO2-H2O and N-A-S-H (Na2O-Al2O3-SiO2-H2O have a wide range of chemical compositions and structures and are difficult to separate from alkali-activated materials. Therefore, it is difficult to analyze their microscopic properties directly. This paper reports research on the synthesis of C-A-S-H and N-A-S-H particles with an average particle size smaller than 300 nm by applying the hydrothermal method. The composition and microstructure of the products with different CaO(Na2O/SiO2 ratios and curing conditions were characterized using XRD, the RIR method, FTIR, SEM, TEM, and laser particle size analysis. The results showed that the C-A-S-H system products with a low CaO/SiO2 ratio were mainly amorphous C-A-S-H gels. With an increase in the CaO/SiO2 ratio, an excess of Ca(OH2 was observed at room temperature, while in a high-temperature reaction system, katoite, C4AcH11, and other crystallized products were observed. The katoite content was related to the curing temperature and the content of Ca(OH2 and it tended to form at a high-temperature and high-calcium environment, and an increase in the temperature renders the C-A-S-H gels more compact. The main products of the N-A-S-H system at room temperature were amorphous N-A-S-H gels and a small amount of sodalite. An increase in the curing temperature promoted the formation of the crystalline products faujasite and zeolite-P. The crystallization products consisted of only zeolite-P in the high-temperature N-A-S-H system and its content were stable above 70%. An increase in the Na2O/SiO2 ratio resulted in more non-bridging oxygen and the TO4 was more isolated in the N-A-S-H structure. The composition and microstructure of the C-A-S-H and N-A-S-H system products synthesized by the hydrothermal method were closely related to the ratio of the raw materials and the curing conditions. The results of this study increase our understanding of the hydration products of alkali
Schroeder, T.W.; Lam, A.M.; Ma, P.F.; Engstrom, J.R.
Supersonic molecular beam techniques have been used to study the nucleation of Si and Si 1-x Ge x thin films on Si and SiO 2 surfaces, where Si 2 H 6 and GeH 4 have been used as sources. A particular emphasis of this study has been an examination of the effects of a coincident flux of atomic hydrogen. The time associated with formation of stable islands of Si or Si 1-x Ge x on SiO 2 surfaces--the incubation time--has been found to depend strongly on the kinetic energy of the incident molecular precursors (Si 2 H 6 and GeH 4 ) and the substrate temperature. After coalescence, thin film morphology has been found to depend primarily on substrate temperature, with smoother films being grown at substrate temperatures below 600 deg. C. Introduction of a coincident flux of atomic hydrogen has a large effect on the nucleation and growth process. First, the incubation time in the presence of atomic hydrogen has been found to increase, especially at substrate temperatures below 630 deg. C, suggesting that hydrogen atoms adsorbed on Si-like sites on SiO 2 can effectively block nucleation of Si. Unfortunately, in terms of promoting selective area growth, coincident atomic hydrogen also decreases the rate of epitaxial growth rate, essentially offsetting any increase in the incubation time for growth on SiO 2 . Concerning Si 1-x Ge x growth, the introduction of GeH 4 produces substantial changes in both thin film morphology and the rate nucleation of poly-Si 1-x Ge x on SiO 2 . Briefly, the addition of Ge increases the incubation time, while it lessens the effect of coincident hydrogen on the incubation time. Finally, a comparison of the maximum island density, the time to reach this density, and the steady-state polycrystalline growth rate strongly suggests that all thin films [Si, Si 1-x Ge x , both with and without H(g)] nucleate at special sites on the SiO 2 surface, and grow primarily via direct deposition of adatoms on pre-existing islands
Full Text Available We present experimental results and theoretical simulations of the adsorption behavior of the metal–organic precursor Co2(CO8 on SiO2 surfaces after application of two different pretreatment steps, namely by air plasma cleaning or a focused electron beam pre-irradiation. We observe a spontaneous dissociation of the precursor molecules as well as autodeposition of cobalt on the pretreated SiO2 surfaces. We also find that the differences in metal content and relative stability of these deposits depend on the pretreatment conditions of the substrate. Transport measurements of these deposits are also presented. We are led to assume that the degree of passivation of the SiO2 surface by hydroxyl groups is an important controlling factor in the dissociation process. Our calculations of various slab settings, using dispersion-corrected density functional theory, support this assumption. We observe physisorption of the precursor molecule on a fully hydroxylated SiO2 surface (untreated surface and chemisorption on a partially hydroxylated SiO2 surface (pretreated surface with a spontaneous dissociation of the precursor molecule. In view of these calculations, we discuss the origin of this dissociation and the subsequent autocatalysis.
Wang, L.; Yi, B.L.; Zhang, H.M.; Xing, D.M.
In this paper, we first reported a novel self-humidifying composite membrane for the proton exchange membrane fuel cell (PEMFC). Cs 2.5 H 0.5 PWO 40 /SiO 2 catalyst particles were dispersed uniformly into the Nafion (registered) resin, and then Cs 2.5 H 0.5 PWO 40 -SiO 2 /Nafion composite membrane was prepared using solution-cast method. Compared with the H 3 PWO 40 (PTA) , the Cs 2.5 H 0.5 PWO 40 /SiO 2 was steady due to the substitute of H + with Cs + and the interaction between the Cs 2.5 H 0.5 PWO 40 and SiO 2 . And compared with the performance of the fuel cell with commercial Nafion (registered) NRE-212 membrane, the cell performance with the self-humidifying composite membrane was obviously improved under both humidified and dry conditions at 60 and 80 o C. The best performance under dry condition was obtained at 60 o C. The self-humidifying composite membrane could minimize membrane conductivity loss under dry conditions due to the presence of catalyst and hydrophilic Cs 2.5 H 0.5 PWO 40 /SiO 2 particles
Ab initio density functional theory calculations are performed to study the electronic properties of a MoS2 monolayer deposited over a SiO 2 substrate in the presence of interface impurities and defects. When MoS2 is placed on a defect-free substrate, the oxide plays an insignificant role since the conduction band top and the valence band minimum of MoS2 are located approximately in the middle of the SiO2 band gap. However, if Na impurities and O dangling bonds are introduced at the SiO2 surface, these lead to localized states, which modulate the conductivity of the MoS2 monolayer from n- to p-type. Our results show that the conductive properties of MoS2 deposited on SiO 2 are mainly determined by the detailed structure of the MoS 2/SiO2 interface, and suggest that doping the substrate can represent a viable strategy for engineering MoS2-based devices. © 2013 American Physical Society.
Sun, Mei; Zhao, Aiwu; Wang, Dapeng; Wang, Jin; Chen, Ping; Sun, Henghui
As a novel surface-enhanced Raman spectroscopic (SERS) nanocomposite, cube-like Fe3O4@SiO2@Au@Ag magnetic nanoparticles (NPs) were synthesized for the first time. Cube-like α-Fe2O3 NPs with uniform size were achieved by optimizing reaction temperature and time. Firstly, the cube-like Fe3O4@SiO2 with good dispersity was achieved by calcining α-Fe2O3@SiO2 NPs in hydrogen atmosphere at 360 °C for 2.5 h, followed by self-assembling a PEI shell via sonication. Furthermore, the Au@Ag particles were densely assembled on the Fe3O4@SiO2 NPs to form the Fe3O4@SiO2@Au@Ag composite structure via strong Ag-N interaction. The obtained nanocomposites exhibited an excellent SERS behavior, reflected by the low detection of limit (p-ATP) at the 5 × 10-14 M level. Moreover, these nanocubes were used for the detection of thiram, and the detection limit can reach 5 × 10-11 M. Meanwhile, the U.S. Environmental Protection Agency specifies that the residue in fruit must be lower than 7 ppm. Hence, the resulting substrate with high SERS activity has great practical potential applications in the rapid detection of chemical, biological, and environment pollutants with a simple portable Raman instrument at trace level.
Yu, Xinxin; Xu, Zejun; Yang, Zehui; Xu, Sen; Zhang, Quan; Ling, Ying; Zhang, Yunfeng; Cai, Weiwei
Prevention of Ru dissolution is essential for steady CO tolerance of anodic electrocatalysts in direct methanol fuel cells. Here, we demonstrate a facile way to stabilize Ru atoms by decorating commercial CB/PtRu with SiO2, which shows a six-fold higher stability and similar activity toward a methanol oxidation reaction leading to no discernible degradation in fuel cell performance compared to commercial CB/PtRu electrocatalysts. The higher stability and stable CO tolerance of SiO2-decorated electrocatalysts originate from the SiO2 coating, since Ru atoms are partially ionized during SiO2 decorating, resulting in difficulties in dissolution; while, in the case of commercial CB/PtRu, the dissolved Ru offers active sites for Pt coalescences and CO species resulting in the rapid decay of the electrochemical surface area and fuel cell performance. To the best of our knowledge, this is the first study about the stabilization of Ru atoms by SiO2. The highest stability is obtained for a PtRu electrocatalyst with negligible effect on the electrochemical properties.
Tomar, Monika; Gupta, Vinay; Sreenivas, K
The influence of sputtered SiO 2 over-layer on the SAW propagation characteristics of a 128 deg. rotated Y-cut X-propagating lithium niobate SAW filter has been studied. Experimentally measured SAW phase velocity and temperature coefficient of delay (TCD), with varying SiO 2 over-layer thickness, show a significant deviation from the theoretically calculated values using the bulk material parameters of SiO 2 . The observed deviation is attributed to the differences in the material parameters (density, elastic and dielectric constants and their temperature coefficient) of the deposited SiO 2 over-layer. The density and the dielectric constant of the deposited SiO 2 layer were determined separately, and the elastic constants and their temperature coefficients were estimated by fitting the experimental velocity and TCD data, respectively. The deviation in the dielectric constant and the density in comparison to the bulk was insignificant, and the estimated values of the elastic constants (C 11 = 0.75x10 11 N m -2 and C 44 0.225x10 11 N m -2 ) were found to be lower, and the respective temperature coefficients (5.0x10 -4 deg C -1 and 2.0x10 -4 deg C -1 ) were high in comparison to the bulk material parameters