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Sample records for series lnru2ga8 ln

  1. Rare earth ruthenium gallides with the ideal composition Ln_2Ru_3Ga_5 (Ln = La-Nd, Sm) crystallizing with U_2Mn_3Si_5 (Sc_2Fe_3Si_5) type structure

    International Nuclear Information System (INIS)

    Jeitschko, Wolfgang; Schlueter, Martin

    2010-01-01

    The rare earth ruthenium gallides Ln_2Ru_3Ga_5 (Ln = La, Ce, Pr, Nd, Sm) were prepared by arc-melting of cold-pressed pellets of the elemental components. They crystallize with a tetragonal structure (P4/mnc, Z = 4) first reported for U_2Mn_3Si_5. The crystal structures of the cerium and samarium compounds were refined from single-crystal X-ray data, resulting in significant deviations from the ideal compositions: Ce_2Ru_2_._3_1_(_1_)Ga_5_._6_9_(_1_), a = 1135.10(8) pm, c = 580.58(6) pm, R_F = 0.022 for 742 structure factors; Sm_2Ru_2_._7_3_(_2_)Ga_5_._2_7_(_2_), a = 1132.95(9) pm, c = 562.71(6) pm, R_F = 0.026 for 566 structure factors and 32 variable parameters each. The deviations from the ideal compositions 2:3:5 are discussed. A mixed Ru/Ga occupancy occurs only for one atomic site. The displacement parameters are relatively large for atoms with mixed occupancy within their coordination shell and small for atoms with no neighboring sites of mixed occupancy. Chemical bonding is analyzed on the basis of interatomic distances. Ln-Ga bonding is stronger than Ln-Ru bonding. Ru-Ga bonding is strong and Ru-Ru bonding is weak. The Ga-Ga interactions are of similar strength as in elemental gallium. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  2. A series of noncentrosymmetric antimony sulfides Ln{sub 8}Sb{sub 2}S{sub 15} (Ln = La, Pr, Nd) - syntheses, crystal and electronic structures, and NLO properties

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Hua-Jun [Laboratory of Applied Research on the Characteristic Resources in the North of Guizhou Province, School of Chemistry and Chemical Engineering, Zunyi Normal College, Guizhou (China); State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou (China); Zhou, Liu-Jiang [State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou (China)

    2015-02-15

    A series of noncentrosymmetric sulfides Ln{sub 8}Sb{sub 2}S{sub 15} (Ln = La, Pr, Nd) were prepared from stoichiometric mixtures of the elements at 1223 K in an evacuated silica tube. The compounds Ln{sub 8}Sb{sub 2}S{sub 15} with Ln = La and Nd are isostructural to Pr{sub 8}Sb{sub 2}S{sub 15} and crystallize in the tetragonal noncentrosymmetric space group I4{sub 1}cd. Their structure contains discrete [SbS{sub 3}]{sup 3-} trigonal pyramids separated by Ln{sup 3+} cations and S{sup 2-} anions. La{sub 8}Sb{sub 2}S{sub 15} shows second harmonic generation with intensities 1.2 times that of the commercially used IR NLO (nonlinear optics) material AgGaS{sub 2} (at 2.05 μm laser). It exhibits excellent thermal stability up to 663 C. Studies with UV/Vis-NIR diffuse reflectance spectroscopy show that La{sub 8}Sb{sub 2}S{sub 15} has an optical gap of around 2.3 eV, and a DFT study indicates a direct band gap with an electronic transfer excitation of S 3p electrons to a La 5d orbital. (Copyright copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. スクッテルド鉱型化合物LnRu4P12(Ln=ランタニド)の構造と電子物性

    OpenAIRE

    内海, 貴徳; 関根, ちひろ; 木村, 繁之; 井上, 雅士; 城谷, 一民

    1999-01-01

    Ternary ruthenium phosphides LnRu4P12 (Ln=La,Ce,Pr,Nd,Sm,Eu,Gd and Tb) with the filled skutterudite-type structure have been prepared at high temperatures and high pressures. The crystal structure of a new compound TbRu4P12 is refined by the Rietveld analysis of the powder X-ray diffraction data. The physical properties of LnRu4P12 have been studied by means of electrical resistivity, magnetic susceptibility, magnetization and specific-heat measurements at low temperatures. LaRu4P12 is a supe...

  4. Series of isostructural planar lanthanide complexes [Ln(III)4(mu3-OH)2(mdeaH)2(piv)8] with single molecule magnet behavior for the Dy4 analogue.

    Science.gov (United States)

    Abbas, Ghulam; Lan, Yanhua; Kostakis, George E; Wernsdorfer, Wolfgang; Anson, Christopher E; Powell, Annie K

    2010-09-06

    A series of five isostructural tetranuclear lanthanide complexes of formula [Ln(4)(mu(3)-OH)(2)(mdeaH)(2)(piv)(8)], (mdeaH(2) = N-methyldiethanolamine; piv = pivalate; Ln = Tb (1), Dy (2), Ho (3), Er (4), and Tm (5)) have been synthesized and characterized. These clusters have a planar "butterfly" Ln(4) core. Magnetically, the Ln(III) ions are weakly coupled in all cases; the Dy(4) compound 2 shows Single Molecule Magnet (SMM) behavior.

  5. Synthesis and characterization of charge-substituted garnets YCaLnGa5O12 (Ln = Ce,Pr,Tb)

    International Nuclear Information System (INIS)

    Gramsch, S.A.

    1993-01-01

    A low temperature method is described for the preparation of the new garnet compounds YCaLnGa 5 O l2 (Ln=Ce, Pr, Th). In this set of compounds (Ca 2+ + Ln 4+ ) replaces 2 Y 3+ in the parent gallium based garnet Y 3 Ga 5 O l2 in order to stabilize as effectively as possible the Ln 4+ species in the eight-coordinate ''A'' site of the garnet structure. Characterization of the oxides by x-ray powder diffraction and thermogravimetric analysis is discussed with regard to the structural relationship of the substituted compound to the parent material. The tetravalent ions Pr 4+ and Tb 4+ exhibit increased thermal stability in reducing conditions as compared to the Ln 4+ states in the fluorite (LnO 2 ) and perovskite (BaLnO 3 ) type structures. This result is discussed with reference to the complex crystal chemistry of these systems

  6. High-pressure synthesis and magnetic behavior of A-site columnar-ordered double perovskites, LnMn(Ga{sub 0.5}Ti{sub 0.5}){sub 2}O{sub 6} (Ln = Sm, Gd)

    Energy Technology Data Exchange (ETDEWEB)

    Shimura, Gen; Niwa, Ken; Shirako, Yuichi; Hasegawa, Masashi [Department of Crystalline Materials Science, Nagoya University, 464-8601, Nagoya (Japan)

    2017-01-26

    A-site columnar-ordered double perovskites, LnMn(Ga{sub 0.5}Ti{sub 0.5}){sub 2}O{sub 6} (Ln = Sm, Gd), were successfully synthesized under high pressure and high temperature (6 GPa, 1375 K). From the synchrotron powder X-ray diffraction patterns, all of the diffraction peaks can be indexed by the P4{sub 2}/nmc space group with lattice parameters a, c ∼ 2a{sub p} (a{sub p}: primitive cubic perovskite lattice) and no ordering of the B-site cations. Rietveld analysis of the synchrotron powder X-ray diffraction patterns and Curie-Weiss fitting of their magnetizations reveal that the ionic formulae of these perovskites are Ln{sup 3+}Mn{sup 2+}(Ga{sup 3+}{sub 0.5}Ti{sup 4+}{sub 0.5}){sub 2}O{sup 2-}{sub 6}. SmMn(Ga{sub 0.5}Ti{sub 0.5}){sub 2}O{sub 6} shows canted-antiferromagnetic behavior, whereas GdMn(Ga{sub 0.5}Ti{sub 0.5}){sub 2}O{sub 6} exhibits two different magnetic states at low temperature depending on the applied magnetic field and shows an unusual magnetization curve. These magnetic behaviors originate by decreasing the antiferromagnetic interaction by substituting Ga{sup 3+}(d{sup 10}) for Ti{sup 4+}(d{sup 0}) and by decreasing the ferromagnetic interaction between columnar-ordered Ln{sup 3+} and Mn{sup 2+}. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Metal-promoted cage rearrangements in the tricarbollide series: Conversion of ligand derivatives 7-L-nido-7,8,9-C3B8H10 (L=H3N, tBuH(2)N, Me2HN) into neutral 8-R-nido-7,8,9-C3B8H11 (R=H2N, tBuHN, Me2N) compounds

    Czech Academy of Sciences Publication Activity Database

    Grüner, Bohumír; Štíbr, Bohumil; Holub, Josef; Císařová, I.

    č. 8 (2003), s. 1533-1539 ISSN 1434-1948 R&D Projects: GA MŠk LN00A028; GA ČR GA203/00/1042 Institutional research plan: CEZ:AV0Z4032918 Keywords : boranes * carboranes * NMR spectroscopy Subject RIV: CA - Inorganic Chemistry Impact factor: 2.482, year: 2003

  8. Ion-irradiation resistance of the orthorhombic Ln_2TiO_5 (Ln = La, Pr, Nd, Sm, Eu, Gd, Tb and Dy) series

    International Nuclear Information System (INIS)

    Aughterson, Robert D.; Lumpkin, Gregory R.; Ionescu, Mihail; Reyes, Massey de los; Gault, Baptiste; Whittle, Karl R.; Smith, Katherine L.; Cairney, Julie M.

    2015-01-01

    The response of Ln_2TiO_5 (where Ln is a lanthanide) compounds exposed to high-energy ions was used to test their suitability for nuclear-based applications, under two different but complementary conditions. Eight samples with nominal stoichiometry Ln_2TiO_5 (Ln = La, Pr, Nd, Sm, Eu, Gd, Tb and Dy), of orthorhombic (Pnma) structure were irradiated, at various temperatures, with 1 MeV Kr"2"+ ions in-situ within a transmission electron microscope. In each case, the fluence was increased until a phase transition from crystalline to amorphous was observed, termed critical dose D_c. At certain elevated temperatures, the crystallinity was maintained irrespective of fluence. The critical temperature for maintaining crystallinity, T_c, varied non-uniformly across the series. The T_c was consistently high for La, Pr, Nd and Sm_2TiO_5 before sequential improvement from Eu to Dy_2TiO_5 with T_c's dropping from 974 K to 712 K. In addition, bulk Dy_2TiO_5 was irradiated with 12 MeV Au"+ ions at 300 K, 723 K and 823 K and monitored via grazing-incidence X-ray diffraction (GIXRD). At 300 K, only amorphisation is observed, with no transition to other structures, whilst at higher temperatures, specimens retained their original structure. The improved radiation tolerance of compounds containing smaller lanthanides has previously been attributed to their ability to form radiation-induced phase transitions. No such transitions were observed here. - Highlights: • First ion-irradiation studies on a number of novel compounds including Pr_2TiO_5, Eu_2TiO_5 and Tb_2TiO_5. • Systematic in-situ ion-irradiation study of almost complete Ln_2TiO_5 series (Ln = lanthanides) with orthorhombic crystal structure type. • The first grazing incidence study of bulk irradiated Dy_2TiO_5 looking for irradiation induced phase transition.

  9. Crystallographic and infrared spectroscopic study of bond distances in Ln[Fe(CN)6].4H2O (Ln=lanthanide)

    International Nuclear Information System (INIS)

    Zhou Xianju; Wong, W.-T.; Faucher, Michele D.; Tanner, Peter A.

    2008-01-01

    Along with crystallographic data of Ln[Fe(CN) 6 ].4H 2 O (Ln=lanthanide), the infrared spectra are reassigned to examine bond length trends across the series of Ln. The changes in mean Ln-O, Ln-N, C≡N and Fe-C distances are discussed and the bond natures of Ln-N and Ln-O are studied by bond length linear or quadratic fitting and comparisons with relevant ionic radii. The two different C≡N bond distances have been simulated by the covalo-electrostatic model. - Graphical abstract: Crystallographic and FTIR data for Ln[Fe(CN) 6 ].4H 2 O enable the changes in Ln-O, Ln-N, C≡N and Fe-C distances to be determined and modeled across the lanthanide series

  10. Syntheses, crystal structures and properties of series of 4d–4f ln(III)–Ag(I) heterometallic coordination polymers

    Energy Technology Data Exchange (ETDEWEB)

    Ran, Xing-Rui [School of Chemistry and Environment, South China Normal University, Guangzhou 510006 (China); Wang, Ning [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Xie, Wei-Ping; Xiong, Yan-Ju; Cheng, Qian [School of Chemistry and Environment, South China Normal University, Guangzhou 510006 (China); Long, Yi [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Yue, Shan-Tang, E-mail: yuesht@scnu.edu.cn [School of Chemistry and Environment, South China Normal University, Guangzhou 510006 (China); Guangzhou Key Laboratory of Materials for Energy Conversion and Storage, Guangzhou (China); Liu, Ying-Liang [College of Science, South China Agricultural University, Guangzhou 510642 (China)

    2015-05-15

    By control of the experimental parameters such as ligands, pH value and reacting temperature, series of three-dimensional (3D) 4d–4f Ln(III)–Ag(I) porous coordination polymers (PCPs) with interesting chain-layer construction, namely, ([Ln{sup III}Ag{sup I}(na)(ina)(ox)]·2(H{sub 2}O)){sub n} [Ln=Sm(1), Eu(2), Gd(3), Tb(4), Dy(5), Ho(6), Y(7), Yb(8)], have been successfully synthesized under hydrothermal conditions and structurally characterized. All the complexes are characterized by elemental analyses, FT-IR spectroscopy, Powder X-ray diffraction (PXRD) and thermogravimetric analyses (TGA). Furthermore, the luminescence properties of compounds 2 and 4 and the magsnetic properties of complexes 3 and 5 were also investigated in detail. - Graphical abstract: Series of three-dimensional (3D) 4d–4f Ln(III)–Ag(I) porous coordination polymers (PCPs) with interesting chain-layer construction which are featured by tetranuclear Ln{sub 2}Ag{sub 2} and ‘non-linear’ N–Ag–N linkages. - Highlights: • Complexes 1–8 are first built by three kinds of organic ligands based on nicotinic acid and isonicotinic acid. • PCPs 1–8 are featured by tetranuclear Ln{sub 2}Ag{sub 2} and ‘non-linear’ N–Ag–N linkages. • The total solvent-accessible volume of PCP 2 comprises 11.6% of the crystal volume after dislodging the free water molecules. • Complexes 2 and 4 exhibit characteristic lanthanide-centered luminescence, while compounds 3 and 5 show antiferromagnetic behaviors.

  11. Solvothermal syntheses, crystal structures, and properties of lanthanide(III) thioarsenates [Ln(dien)2(μ-1κ,2κ2-AsS4)]n (Ln==Sm, Eu, Gd) and [Ln(dien)2(1κ2-AsS4)] (Ln==Tb, Dy, Ho)

    International Nuclear Information System (INIS)

    Wang, Fang; Tang, Chunying; Chen, Ruihong; Zhang, Yong; Jia, Dingxian

    2013-01-01

    Solvothermal reactions of Ln 2 O 3 , As and S in diethylenetriamine (dien) at 170 °C for 6 days afforded two structural types of lanthanide thioarsenates with the general formulae [Ln(dien) 2 (μ-1κ,2κ 2 -AsS 4 )] n [Ln=Sm(1), Eu(2), Gd(3)] and [Ln(dien) 2 (1κ 2 -AsS 4 )] [Ln=Tb(4), Dy(5), Ho(6)]. The Ln 2 O 3 oxides were converted to [Ln(dien) 2 ] 3+ complex units in the solvothermal reactions. The As atom binds four S atoms, forming a tetrahedral AsS 4 unit. In 1−3, the AsS 4 units interconnect the [Ln(dien) 2 ] 3+ cations via Ln−S bonds as tridentate μ-1κ,2κ 2 -AsS 4 bridging ligands, resulting in the neutral coordination polymers [Ln(dien) 2 (μ-1κ,2κ 2 -AsS 4 )] n (Ln1). In 4−6, the AsS 4 units coordinate with the Ln 3+ ion of [Ln(dien) 2 ] 3+ as 1κ 2 -AsS 4 chelating ligands to form neutral coordination compounds [Ln(dien) 2 (1κ 2 -AsS 4 )] (Ln2). The Ln 3+ ions are in nine- and eight-coordinated environments in Ln1 and Ln2, respectively. The formation of Ln1 and Ln2 is related with ionic size of the Ln 3+ ions. Optical absorption spectra showed that 1−6 have potential use as semiconductors with the band gaps in the range 2.18−3.21 eV. - Graphical abstract: Two types of Ln-thioarsenates [Ln(dien) 2 (μ-1κ,2κ 2 -AsS 4 )] n and [Ln(dien) 2 (1κ 2 -AsS 4 )] were prepared by solvothermal methods and the soft Lewis basic AsS 4 3– ligand to Ln(III) centers with polyamine co-ligand was obtained. Display Omitted - Highlights: • Lanthanide thioarsenates were prepared by solvothermal methods. • The soft Lewis basic AsS 4 ligand coordinate Ln 3+ ions with coexistence polyamine ligands. • Two structural types of Ln-thioarsenates with structural turnover at Tb were obtained along Ln series. • The Ln-thioarsenates are potential semiconductors with optical band gaps in the range 2.18−3.21 eV

  12. Ln28Ti2O7 (Ln = La, Nd, Sm, Gd): a novel series of defective Ruddlesden–Popper phases formed by topotactic dehydration of HLnTiO4

    OpenAIRE

    Thangadurai, V; Subbanna, GN; Gopalakrishnan, J

    1998-01-01

    Topotactic dehydration of HLnTiO4 (Ln = La, Nd, Sm or Gd) around 480–500 °C yields a new series of metastable layered perovskite oxides, Ln28Ti2O7, that possess a defective Sr3Ti2O7 structure, where the cubooctahedral sites within the double-perovskite layers are most likely vacant.

  13. Complexation of amidocarbamoyl phosphine oxides with Ln+3 (Ln = La, Nd, Pm, Sm and Eu) cation series: structural and thermodynamical features

    International Nuclear Information System (INIS)

    Hosseinnejad, Tayebeh; Kazemi, Tayebeh

    2016-01-01

    In the present study, we have mainly investigated the nature of interactions in Ln 3+ (Ln = La, Nd, Pm, Sm, Eu) complexes with amidocarbamoyl methyl phosphine oxide (CMPO) and amidocarbamoyl propyl phosphine oxide (CPPO) ligands based on density functional theory (DFT) approaches. In the first step, thermodynamical properties for complexation of CMPO and CPPO ligands with Ln 3+ cation series have been determined in the gas phase and with the presence of three solvents: n-hexane, chloroform and toluene, via polarized continuum model (PCM) computations. The trend of metal-ligand interaction strength has been analyzed and compared with the trend of ionic hardness within the series of lanthanide cations and different size of alkyl chain of amidocarbamoyl phosphine oxide ligand. The calculated thermochemical results in the gas and solution phases reveals that there is a consistency between increasing trend in the hardness of Ln 3+ cation series and also electron-donating property of alkyl chain with increasing in thermodynamical stability of [Ln-CMPO] 3+ and [Ln-CPPO] 3+ complex series. We have also demonstrated that in the complexation reaction of all complex series, using n-hexane as solvent is more favorable thermodynamically than chloroform and toluene. It should be stated that this issue has been observed in many experiments. Finally, analysis of calculated deformation energies and also the variation in bond order of some selected key bonds in CMPO and CPPO ligands and their corresponded Ln 3+ complexes series show a similar trend with increasing in the hardness of Ln 3+ cation series and electron-donating of alkyl chain of amidocarbamoyl phosphine oxide ligand.

  14. Detection of the Unstable Hb Köln (HBB: c.295G>A) by a Capillary Electrophoresis Method.

    Science.gov (United States)

    Li, You-Qiong; Ye, Li-Hua; Mo, Yun

    2016-11-01

    Hb Köln (HBB: c.295G>A) is an unstable β-globin gene variant with a GTG>ATG substitution at codon 98. This variant is quite frequent in Europe and the USA but rare in China. It can easily be misdiagnosed as Hb Constant Spring (Hb CS; HBA2: c.427T>C) by high performance liquid chromatography (HPLC), but detection and quantification of both Hb Köln and degraded Hb Köln by capillary electrophoresis (CE) are possible. Thus, we concluded that CE was the preferred method for Hb Köln detection.

  15. Complexation of amidocarbamoyl phosphine oxides with Ln{sup +3} (Ln = La, Nd, Pm, Sm and Eu) cation series: structural and thermodynamical features

    Energy Technology Data Exchange (ETDEWEB)

    Hosseinnejad, Tayebeh; Kazemi, Tayebeh [Alzahra Univ., Tehran (Iran, Islamic Republic of). Dept. of Chemistry

    2016-05-01

    In the present study, we have mainly investigated the nature of interactions in Ln{sup 3+} (Ln = La, Nd, Pm, Sm, Eu) complexes with amidocarbamoyl methyl phosphine oxide (CMPO) and amidocarbamoyl propyl phosphine oxide (CPPO) ligands based on density functional theory (DFT) approaches. In the first step, thermodynamical properties for complexation of CMPO and CPPO ligands with Ln{sup 3+} cation series have been determined in the gas phase and with the presence of three solvents: n-hexane, chloroform and toluene, via polarized continuum model (PCM) computations. The trend of metal-ligand interaction strength has been analyzed and compared with the trend of ionic hardness within the series of lanthanide cations and different size of alkyl chain of amidocarbamoyl phosphine oxide ligand. The calculated thermochemical results in the gas and solution phases reveals that there is a consistency between increasing trend in the hardness of Ln{sup 3+} cation series and also electron-donating property of alkyl chain with increasing in thermodynamical stability of [Ln-CMPO]{sup 3+} and [Ln-CPPO]{sup 3+} complex series. We have also demonstrated that in the complexation reaction of all complex series, using n-hexane as solvent is more favorable thermodynamically than chloroform and toluene. It should be stated that this issue has been observed in many experiments. Finally, analysis of calculated deformation energies and also the variation in bond order of some selected key bonds in CMPO and CPPO ligands and their corresponded Ln{sup 3+} complexes series show a similar trend with increasing in the hardness of Ln{sup 3+} cation series and electron-donating of alkyl chain of amidocarbamoyl phosphine oxide ligand.

  16. Structures and magnetic properties of rare earth double perovskites containing antimony or bismuth Ba{sub 2}LnMO{sub 6} (Ln=rare earths; M=Sb, Bi)

    Energy Technology Data Exchange (ETDEWEB)

    Otsuka, Shumpei, E-mail: m-nis-s-o@ec.hokudai.ac.jp; Hinatsu, Yukio

    2015-07-15

    A series of double perovskite-type oxides Ba{sub 2}LnMO{sub 6} (Ln=lanthanides; M=Sb, Bi) were synthesized and their structures were studied. The Ln and M are structurally ordered in the rock-salt type at the B-site of the perovskite ABO{sub 3}. For Ba{sub 2}PrBiO{sub 6} and Ba{sub 2}TbBiO{sub 6}, it has been found that the disordering between Ln ion and Bi ion occurs at the B-site of the double perovskite and both the Pr (Tb) and Bi exist in two oxidation state in the same compound from the analysis of the X-ray diffraction and magnetic susceptibility data. Magnetic susceptibility measurements show that all these compounds are paramagnetic and have no magnetic ordering down to 1.8 K. - Graphical abstract: Tolerance factor for Ba{sub 2}LnMO{sub 6} (M=Sb, Bi) plotted against the ionic radius of Ln{sup 3+}. We have found that there is a clear relation between crystal structures and tolerance factors. - Highlights: • The Ln and M ions are structurally ordered in the rock-salt type at the B-site. • The disordering between Pr (Tb) ion and Bi ion occurs at the B-site. • Ba{sub 2}LnMO{sub 6} (M=Sb, Bi) have no magnetic ordering down to 1.8 K.

  17. Solvothermal syntheses, crystal structures, and properties of lanthanide(III) thioarsenates [Ln(dien){sub 2}(μ-1κ,2κ{sup 2}-AsS{sub 4})]{sub n} (Ln==Sm, Eu, Gd) and [Ln(dien){sub 2}(1κ{sup 2}-AsS{sub 4})] (Ln==Tb, Dy, Ho)

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Fang; Tang, Chunying; Chen, Ruihong; Zhang, Yong; Jia, Dingxian, E-mail: jiadingxian@suda.edu.cn

    2013-10-15

    Solvothermal reactions of Ln{sub 2}O{sub 3}, As and S in diethylenetriamine (dien) at 170 °C for 6 days afforded two structural types of lanthanide thioarsenates with the general formulae [Ln(dien){sub 2}(μ-1κ,2κ{sup 2}-AsS{sub 4})]{sub n} [Ln=Sm(1), Eu(2), Gd(3)] and [Ln(dien){sub 2}(1κ{sup 2}-AsS{sub 4})] [Ln=Tb(4), Dy(5), Ho(6)]. The Ln{sub 2}O{sub 3} oxides were converted to [Ln(dien){sub 2}]{sup 3+} complex units in the solvothermal reactions. The As atom binds four S atoms, forming a tetrahedral AsS{sub 4} unit. In 1−3, the AsS{sub 4} units interconnect the [Ln(dien){sub 2}]{sup 3+} cations via Ln−S bonds as tridentate μ-1κ,2κ{sup 2}-AsS{sub 4} bridging ligands, resulting in the neutral coordination polymers [Ln(dien){sub 2}(μ-1κ,2κ{sup 2}-AsS{sub 4})]{sub n} (Ln1). In 4−6, the AsS{sub 4} units coordinate with the Ln{sup 3+} ion of [Ln(dien){sub 2}]{sup 3+} as 1κ{sup 2}-AsS{sub 4} chelating ligands to form neutral coordination compounds [Ln(dien){sub 2}(1κ{sup 2}-AsS{sub 4})] (Ln2). The Ln{sup 3+} ions are in nine- and eight-coordinated environments in Ln1 and Ln2, respectively. The formation of Ln1 and Ln2 is related with ionic size of the Ln{sup 3+} ions. Optical absorption spectra showed that 1−6 have potential use as semiconductors with the band gaps in the range 2.18−3.21 eV. - Graphical abstract: Two types of Ln-thioarsenates [Ln(dien){sub 2}(μ-1κ,2κ{sup 2}-AsS{sub 4})]{sub n} and [Ln(dien){sub 2}(1κ{sup 2}-AsS{sub 4})] were prepared by solvothermal methods and the soft Lewis basic AsS{sub 4}{sup 3–} ligand to Ln(III) centers with polyamine co-ligand was obtained. Display Omitted - Highlights: • Lanthanide thioarsenates were prepared by solvothermal methods. • The soft Lewis basic AsS{sub 4} ligand coordinate Ln{sup 3+} ions with coexistence polyamine ligands. • Two structural types of Ln-thioarsenates with structural turnover at Tb were obtained along Ln series. • The Ln-thioarsenates are potential semiconductors

  18. Structure of (Ga2O3)2(ZnO)13 and a unified description of the homologous series (Ga2O3)2(ZnO)(2n + 1).

    Science.gov (United States)

    Michiue, Yuichi; Kimizuka, Noboru; Kanke, Yasushi; Mori, Takao

    2012-06-01

    The structure of (Ga(2)O(3))(2)(ZnO)(13) has been determined by a single-crystal X-ray diffraction technique. In the monoclinic structure of the space group C2/m with cell parameters a = 19.66 (4), b = 3.2487 (5), c = 27.31 (2) Å, and β = 105.9 (1)°, a unit cell is constructed by combining the halves of the unit cell of Ga(2)O(3)(ZnO)(6) and Ga(2)O(3)(ZnO)(7) in the homologous series Ga(2)O(3)(ZnO)(m). The homologous series (Ga(2)O(3))(2)(ZnO)(2n + 1) is derived and a unified description for structures in the series is presented using the (3+1)-dimensional superspace formalism. The phases are treated as compositely modulated structures consisting of two subsystems. One is constructed by metal ions and another is by O ions. In the (3 + 1)-dimensional model, displacive modulations of ions are described by the asymmetric zigzag function with large amplitudes, which was replaced by a combination of the sawtooth function in refinements. Similarities and differences between the two homologous series (Ga(2)O(3))(2)(ZnO)(2n + 1) and Ga(2)O(3)(ZnO)(m) are clarified in (3 + 1)-dimensional superspace. The validity of the (3 + 1)-dimensional model is confirmed by the refinements of (Ga(2)O(3))(2)(ZnO)(13), while a few complex phenomena in the real structure are taken into account by modifying the model.

  19. Superconductivity in Multiple Phase Sr2Ln1–xCaxGaCu2O7 and Characterization of La2–xSrxCaCu2O6+δ

    NARCIS (Netherlands)

    Cava, R.J.; Dover, R.B. van; Batlogg, B.; Krajewski, J.J.; Schneemeyer, L.F.; Siegrist, T.; Hessen, B.; Chen, H.; Peck, Jr.; Rupp, Jr. L.W.

    1991-01-01

    We have observed the occurrance of superconductivity at temperatures between 40 and 50K for multiple phase samples of Sr2Ln1–xCaxGaCu2O7 treated at 950-1000°C at 25 atmospheres oxygen pressure. We have not been able to find conditions at oxygen pressures of 25 atmospheres or below which make single

  20. Carbonato-bridged Ni(II)2Ln(III)2 (Ln(III) = Gd(III), Tb(III), Dy(III)) complexes generated by atmospheric CO2 fixation and their single-molecule-magnet behavior: [(μ4-CO3)2{Ni(II)(3-MeOsaltn)(MeOH or H2O)Ln(III)(NO3)}2]·solvent [3-MeOsaltn = N,N'-bis(3-methoxy-2-oxybenzylidene)-1,3-propanediaminato].

    Science.gov (United States)

    Sakamoto, Soichiro; Fujinami, Takeshi; Nishi, Koshiro; Matsumoto, Naohide; Mochida, Naotaka; Ishida, Takayuki; Sunatsuki, Yukinari; Re, Nazzareno

    2013-06-17

    Atmospheric CO2 fixation of [Ni(II)(3-MeOsaltn)(H2O)22.5H2O [3-MeOsaltn = N,N'-bis(3-methoxy-2-oxybenzylidene)-1,3-propanediaminato], Ln(III)(NO3)3·6H2O, and triethylamine occurred in methanol/acetone, giving a first series of carbonato-bridged Ni(II)2Ln(III)2 complexes [(μ4-CO3)2{Ni(II)(3-MeOsaltn)(MeOH)Ln(III)(NO3)}2] (1Gd, 1Tb, and 1Dy). When the reaction was carried out in acetonitrile/water, it gave a second series of complexes [(μ4-CO3)2{Ni(II)(3-MeOsaltn)(H2O)Ln(III)(NO3)}22CH3CN·2H2O (2Gd, 2Tb, and 2Dy). For both series, each Ni(II)2Ln(III)2 structure can be described as two di-μ-phenoxo-bridged Ni(II)Ln(III) binuclear units bridged by two carbonato CO3(2-) units to form a carbonato-bridged (μ4-CO3)2{Ni(II)2Ln(III)2} structure. The high-spin Ni(II) ion has octahedral coordination geometry, and the Ln(III) ion is coordinated by O9 donor atoms from Ni(II)(3-MeOsaltn), bidentate NO3(-), and one and two oxygen atoms of two CO3(2-) ions. The NO3(-) ion for the first series roughly lie on Ln-O(methoxy) bonds and are tilted toward the outside, while for the second series, the two oxygen atoms roughly lie on one of the Ln-O(phenoxy) bonds due to the intramolecular hydrogen bond. The temperature-dependent magnetic susceptibilities indicated a ferromagnetic interaction between the Ni(II) and Ln(III) ions (Ln(III) = Gd(III), Tb(III), Dy(III)) for all of the complexes, with a distinctly different magnetic behavior between the two series in the lowest-temperature region due to the Ln(III)-Ln(III) magnetic interaction and/or different magnetic anisotropies of the Tb(III) or Dy(III) ion. Alternating-current susceptibility measurements under the 0 and 1000 Oe direct-current (dc) bias fields showed no magnetic relaxation for the Ni(II)2Gd(III)2 complexes but exhibited an out-of-phase signal for Ni(II)2Tb(III)2 and Ni(II)2Dy(III)2, indicative of slow relaxation of magnetization. The energy barriers, Δ/kB, for the spin flipping were estimated from the Arrhenius

  1. On the structure of rare earth periodates of LnIO5x4H2O (Ln=Pr-Lu, Y)

    International Nuclear Information System (INIS)

    Shamraj, N.B.; Varfolomeev, M.B.; Saf'yanov, Yu.N.; Kuz'min, Eh.A.; Ilyukhin, V.V.; AN SSSR, Moscow. Inst. Kristallografii)

    1977-01-01

    The crystal structure of three representatives of an isotypic series of monoclinic periodates of rare earth elements in the series from Pr to Lu and Y was deciphered. The monoclinic cell for all LnIO 5 x4H 2 O contains Z=4 formula units. The architectural motif consists in layers of octahedra of IO 4 (OH) 2 and polyhedra of LnO 5 (H 2 O 3 ) parallel to the (100) plane. Adhesion between the layers is achieved through H-bonds

  2. Synthesis, Crystal Structures, Magnetic Properties, and Theoretical Investigation of a New Series of NiII-LnIII-WV Heterotrimetallics: Understanding the SMM Behavior of Mixed Polynuclear Complexes.

    Science.gov (United States)

    Vieru, Veacheslav; Pasatoiu, Traian D; Ungur, Liviu; Suturina, Elizaveta; Madalan, Augustin M; Duhayon, Carine; Sutter, Jean-Pascal; Andruh, Marius; Chibotaru, Liviu F

    2016-12-05

    The polynuclear compounds containing anisotropic metal ions often exhibit efficient barriers for blocking of magnetization at fairly arbitrary geometries. However, at variance with mononuclear complexes, which usually become single-molecule magnets (SMM) under the sole requirement of a highly axial crystal field at the metal ion, the factors influencing the SMM behavior in polynuclear complexes, especially, with weakly axial magnetic ions, still remain largely unrevealed. As an attempt to clarify these conditions, we present here the synthesis, crystal structures, magnetic behavior, and ab initio calculations for a new series of Ni II -Ln III -W V trimetallics, [(CN) 7 W(CN)Ni(H 2 O)(valpn)Ln(H 2 O) 4 ]·H 2 O (Ln = Y 1, Eu 2, Gd 3, Tb 4, Dy 5, Lu 6). The surprising finding is the absence of the magnetic blockage even for compounds involving strongly anisotropic Dy III and Tb III metal ions. This is well explained by ab initio calculations showing relatively large transversal components of the g-tensor in the ground exchange Kramers doublets of 1 and 4 and large intrinsic tunneling gaps in the ground exchange doublets of 3 and 5. In order to get more insight into this behavior, another series of earlier reported compounds with the same trinuclear [W V Ni II Ln III ] core structure, [(CN) 7 W(CN)Ni(dmf)(valdmpn)Ln(dmf) 4 ]·H 2 O (Ln = Gd III 7, Tb III 8a, Dy III 9, Ho III 10), [(CN) 7 W(CN)Ni(H 2 O)(valdmpn)Tb(dmf) 2.5 (H 2 O) 1.5 ]·H 2 O·0.5dmf 8b, and [(CN) 7 W(CN)Ni(H 2 O)(valdmpn)Er(dmf) 3 (H 2 O) 1 ]·H 2 O·0.5dmf 11, has been also investigated theoretically. In this series, only 8b exhibits SMM behavior which is confirmed by the present ab initio calculations. An important feature for the entire series is the strong ferromagnetic coupling between Ni(II) and W(V), which is due to an almost perfect trigonal dodecahedron geometry of the octacyano wolframate fragment. The reason why only 8b is an SMM is explained by positive zero-field splitting on the nickel

  3. Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

    Science.gov (United States)

    Krishnamoorthy, Sriram; Xia, Zhanbo; Joishi, Chandan; Zhang, Yuewei; McGlone, Joe; Johnson, Jared; Brenner, Mark; Arehart, Aaron R.; Hwang, Jinwoo; Lodha, Saurabh; Rajan, Siddharth

    2017-07-01

    Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the β-(Al0.2Ga0.8)2O3/Ga2O3 material system could enable heterojunction devices for high performance electronics.

  4. Raman scattering from In0.2Ga0.8N/GaN superlattices

    International Nuclear Information System (INIS)

    Kisoda, Kenji; Hirakura, Kohji; Harima, Hiroshi

    2006-01-01

    We have performed Raman scattering experiments on high quality In 0.2 Ga 0.8 N/GaN superlattices(SLs). The A 1 LO phonon mode from the In 0.2 Ga 0.8 N layer was observed in the Mg doped SL. This was attributable to manifestation of a resonance enhancement via acceptor levels formed by magnesium doping. The peak frequency of the A 1 LO mode shifted to high frequency side with the excitation energy. The frequency shift suggested that the composition of indium was fluctuated along the growth direction in the InGaN layer. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Formation enthalpies of LaLn'O{sub 3} (Ln'=Ho, Er, Tm and Yb) interlanthanide perovskites

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Jianqi [Peter A. Rock Thermochemistry Laboratory and NEAT ORU, University of California, Davis, CA 95616 (United States); College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Laboratory of High Energy Density Physics of Ministry of Education, Sichuan University, Chengdu 610064 (China); Guo, Xiaofeng [Peter A. Rock Thermochemistry Laboratory and NEAT ORU, University of California, Davis, CA 95616 (United States); Mielewczyk-Gryn, Aleksandra [Peter A. Rock Thermochemistry Laboratory and NEAT ORU, University of California, Davis, CA 95616 (United States); Faculty of Applied Physics and Mathematics, Department of Solid State Physics, Gdansk University of Technology, Narutowicza 11/12, 80-233 Gdansk (Poland); Navrotsky, Alexandra, E-mail: anavrotsky@ucdavis.edu [Peter A. Rock Thermochemistry Laboratory and NEAT ORU, University of California, Davis, CA 95616 (United States)

    2015-07-15

    High-temperature oxide melt solution calorimetry using 3Na{sub 2}O·MoO{sub 3} at 802 °C was performed for interlanthanide perovskites LaLn'O{sub 3} (Ln'=Ho, Er, Tm and Yb) and lanthanide oxides (La{sub 2}O{sub 3}, Ho{sub 2}O{sub 3}, Er{sub 2}O{sub 3}, Tm{sub 2}O{sub 3} and Yb{sub 2}O{sub 3}). The enthalpies of formation of these interlanthanide perovskites from binary lanthanide oxides at room temperature (25 °C) were determined to be −8.3±3.4 kJ/mol for LaHoO{sub 3}, −9.9±3.0 kJ/mol for LaErO{sub 3}, −10.8±2.7 kJ/mol for LaTmO{sub 3} and −12.3±2.9 kJ/mol for LaYbO{sub 3}. There is a roughly linear relationships between these enthalpy values and the tolerance factor for these and for other LaM{sup 3+}O{sub 3} (M=In, Sc, Ga, Al, Fe and Cr) perovskites, confirming that the distortion of the perovskites as results from ionic radius difference of A-site and B-site cations, is the main factor determining the stability of these compounds. - Graphical abstract: A linear relationship between the enthalpy of formation and the tolerance factor for interlanthanide LaLn'O{sub 3} (Ln'=Ho, Er, Tm, and Yb) and other LaM{sup 3+}O{sub 3} (M=In, Sc, Ga, Al, Fe and Cr) perovskites. - Highlights: • Interlanthanide perovskites were synthesized by solid state reactions. • Their enthalpies of formation were measured by oxide melt solution calorimetry. • ΔH{sub f,ox} shows a linear relationship with tolerance factor.

  6. Síntesis hidrotermal de monocristales LnMn2O5 (Ln= Y, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho y Er

    Directory of Open Access Journals (Sweden)

    Señarís Rodríguez, M. A.

    2008-08-01

    Full Text Available Ten single crystals of the series LnMn2O5 (Ln= Y, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho and Er were synthesized by hydrothermal synthesis in a single step and without subsequent thermal treatments from aqueous solutions of metals salts at 240 ºC. The obtained single crystals have a size of various micrometers and their morphology changes throughout the serie: they are polygonal in the case of the compounds with Ln= Pr, Nd, Sm, Eu and Gd and needle-like in the case of the compounds with Ln= Y, Tb, Dy, Ho and Er. After the analysis of the obtained products employing different conditions of synthesis we attributed the different morphology to a greater growth rate along the c axis when the smaller ions (Y, Tb, Dy, Ho y Er are involved, due to their better adaptation to the compound’s crystal structure.Se han conseguido preparar monocristales de 10 óxidos mixtos de la serie LnMn2O5 (Ln= Y, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho y Er mediante síntesis hidrotermal optimizada, en un único paso y sin tratamientos térmicos posteriores partiendo de las correspondientes sales metálicas en disolución acuosa a 240 ºC. Los monocristales obtenidos son relativamente grandes, de varias micras y su morfología varía a lo largo de la serie: es poligonal en el caso de los compuestos de los lantánidos del inicio de la serie (Ln= Pr, Nd, Sm, Eu y Gd y acicular en el caso de los compuestos de Y y de los lantánidos del final de la serie (Ln= Tb, Dy, Ho y Er. Tras el análisis de los productos obtenidos empleando distintas condiciones de síntesis atribuimos la diferente morfología a una mayor velocidad de crecimiento cristalino a lo largo del eje c cuando intervienen los iones más pequeños (Y, Tb, Dy, Ho y Er debido a la mejor adaptación de éstos últimos a la estructura cristalina del compuesto.

  7. Comparative magnetic studies of (Sm, Nd) trichloroacetates and their heteronuclear CuLn2(CCl3COO)8.6H2O systems: structure and spectroscopy of a new type of Eu trichloroacetate

    International Nuclear Information System (INIS)

    Wojciechowski, W.; Legendziewicz, J.; Puchalska, M.; Ciunik, Z.

    2004-01-01

    Two series of compounds: heteronuclear CuLn 2 (CCl 3 COO) 8 .6H 2 O (Ln = Nd and Sm) and their simple analogues Ln(CCl 3 COO) 3 .2H 2 O (Ln = Eu, Nd, Sm) were synthesized. New Eu(III) trichloroacetate; Eu(CCl 3 COO) 3 .3H 2 O.CH 3 OH was obtained, its molecular structure was determined by X-ray diffraction and compared with the data of respective systems reported earlier. Magnetization was measured and the susceptibility was derived in the limit of low field. Magnetic susceptibilities were calculated and discussed for series of homo- and hetero-nuclear chloroacetates.Untypical hysteresis was found (two loops) in samarium trichloroacetate. This phenomenon is most probably the effect of flops of spins in magnetic fields of 30,000Oe and very weak (if any) interaction intermediated by weak hydrogen bonding between the chains. A similar magnetic behavior was observed in neodymium carboxylate where the magnetic ordering was observed as a result of Nd-Nd interaction at low temperature (1.6K). For this system, the magnetic moment depends on magnitude of the magnetic field and ferromagnetic ordering appears at low temperatures. The strongest interactions of coupled ions and antiferromagnetic ordering with T N =6.5K were found in CuSm 2 (CCl 3 COO) 8 .6H 2 O single crystals.Heisenberg model was applied in the calculations for three interacting ions located linearly. The following relation was derived: χ M =Ng 2 μ β 2 kT(12)+(12)exp(J 2 /kT)+5exp(J 2 /kT)-exp(1,5J 1 /kT)2+2exp(J 2 /kT)+4exp(J 2 /kT)-exp(1,5J 1 /kT) and applied in calculations of the exchange integrals. Mechanism of the exchange interaction was discussed on the basis of the obtained results.

  8. Estimation of tau1 for the host Kramers' Ln3+ ions (Ln = Nd, Sm and Yb) from the EPR linewidths of Gd3+ impurity ions in Ln2(SO4)3.8H2O

    International Nuclear Information System (INIS)

    Malhotra, V.M.; Buckmaster, H.A.

    1981-01-01

    It is shown that the EPR linewidth data published by Misra and Mikolajczak for Gd 3+ impurity ions in Ln 2 (SO 4 ) 3 .8H 2 O (Ln = Nd, Sm and Yb) single crystals at 77 and 300 K can be used to estimate the effective spin-lattice relaxation time of Kramers' host ions. The various relaxation mechanisms which are operative in the lanthanides are reviewed and discussed. The estimated relaxation times are shown to be a sensitive function of the host ion energy level splittings and the temperature. The estimated effective spin-lattice relaxation times in these hosts are in reasonable agreement with those expected from a resonance Orbach process

  9. General synthesis and structural evolution of a layered family of Ln8(OH)20Cl4 x nH2O (Ln = Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, and Y).

    Science.gov (United States)

    Geng, Fengxia; Matsushita, Yoshitaka; Ma, Renzhi; Xin, Hao; Tanaka, Masahiko; Izumi, Fujio; Iyi, Nobuo; Sasaki, Takayoshi

    2008-12-03

    The synthesis process and crystal structure evolution for a family of stoichiometric layered rare-earth hydroxides with general formula Ln(8)(OH)(20)Cl(4) x nH(2)O (Ln = Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, and Y; n approximately 6-7) are described. Synthesis was accomplished through homogeneous precipitation of LnCl(3) x xH(2)O with hexamethylenetetramine to yield a single-phase product for Sm-Er and Y. Some minor coexisting phases were observed for Nd(3+) and Tm(3+), indicating a size limit for this layered series. Light lanthanides (Nd, Sm, Eu) crystallized into rectangular platelets, whereas platelets of heavy lanthanides from Gd tended to be of quasi-hexagonal morphology. Rietveld profile analysis revealed that all phases were isostructural in an orthorhombic layered structure featuring a positively charged layer, [Ln(8)(OH)(20)(H(2)O)(n)](4+), and interlayer charge-balancing Cl(-) ions. In-plane lattice parameters a and b decreased nearly linearly with a decrease in the rare-earth cation size. The interlamellar distance, c, was almost constant (approximately 8.70 A) for rare-earth elements Nd(3+), Sm(3+), and Eu(3+), but it suddenly decreased to approximately 8.45 A for Tb(3+), Dy(3+), Ho(3+), and Er(3+), which can be ascribed to two different degrees of hydration. Nd(3+) typically adopted a phase with high hydration, whereas a low-hydration phase was preferred for Tb(3+), Dy(3+), Ho(3+), Er(3+), and Tm(3+). Sm(3+), Eu(3+), and Gd(3+) samples were sensitive to humidity conditions because high- and low-hydration phases were interconvertible at a critical humidity of 10%, 20%, and 50%, respectively, as supported by both X-ray diffraction and gravimetry as a function of the relative humidity. In the phase conversion process, interlayer expansion or contraction of approximately 0.2 A also occurred as a possible consequence of absorption/desorption of H(2)O molecules. The hydration difference was also evidenced by refinement results. The number of coordinated water

  10. Al{sub 0.2}Ga{sub 0.8}As X-ray photodiodes for X-ray spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Whitaker, M.D.C., E-mail: M.Whitaker@sussex.ac.uk; Lioliou, G.; Butera, S.; Barnett, A.M.

    2016-12-21

    Three custom-made Al{sub 0.2}Ga{sub 0.8}As p-i-n mesa X-ray photodiodes (200 µm diameter, 3 µm i layer) were electrically characterised and investigated for their response to illumination with soft X-rays from an {sup 55}Fe radioisotope X-ray source (Mn Kα = 5.9 keV; Mn Kβ = 6.49 keV). The AlGaAs photodiodes were shown to be suitable for photon counting X-ray spectroscopy at room temperature. When coupled to a custom-made low-noise charge-sensitive preamplifier, a mean energy resolution (as quantified by the full width at half maximum of the 5.9 keV photopeak) of 1.24 keV was measured at room temperature. Parameters such as the depletion width (1.92 µm at 10 V), charge trapping noise (61.7 e{sup −} rms ENC at 5 V, negligible at 10 V) and the electronic noise components (known dielectric noise (63.4 e{sup −} rms), series white noise (27.7 e{sup −} rms), parallel white noise (9.5 e{sup −} rms) and 1/f series noise (2.2 e{sup −} rms) at 10 V reverse bias) affecting the achieved energy resolution were computed. The estimated charge trapping noise and mean energy resolution were compared to similar materials (e.g. Al{sub 0.8}Ga{sub 0.2}As) previously reported, and discussed. These results are the first demonstration of photon counting X-ray spectroscopy with Al{sub 0.2}Ga{sub 0.8}As reported to date.

  11. Ternary gallides RE_4Rh_9Ga_5, RE_5Rh_1_2Ga_7 and RE_7Rh_1_8Ga_1_1 (RE=Y, La-Nd, Sm, Gd, Tb). Intergrowth structures with MgCu_2 and CaCu_5 related slabs

    International Nuclear Information System (INIS)

    Seidel, Stefan; Rodewald, Ute C.; Poettgen, Rainer; Janka, Oliver

    2017-01-01

    Fourteen ternary gallides RE_4Rh_9Ga_5, RE_5Rh_1_2Ga_7 and RE_7Rh_1_8Ga_1_1 (RE=Y, La-Nd, Sm, Gd, Tb) were synthesized from the elements by arc-melting, followed by different annealing sequences either in muffle or induction furnaces. The samples were characterized through Guinier powder patterns and the crystal structures of Ce_4Rh_9Ga_5, Ce_5Rh_1_2Ga_7, Ce_7Rh_1_8Ga_1_1, Nd_5Rh_1_0_._4_4_(_4_)Ga_8_._5_6_(_4_), Nd_4Rh_9Ga_5 and Gd_4Rh_9Ga_5 were refined from single crystal X-ray diffractometer data. The new gallides are the n=2, 3 and 5 members of the RE_2_+_n Rh_3_+_3_n Ga_1_+_2_n structure series in the Parthe intergrowth concept. The slabs of these intergrowth structures derive from the cubic Laves phase MgCu_2 (Mg_2Ni_3Si as ternary variant) and CaCu_5 (CeCo_3B_2 as ternary variant). Only the Nd_5Rh_1_0_._4_4_(_4_)Ga_8_._5_6_(_4_) crystal shows Rh/Ga mixing within the Laves type slabs. Magnetic susceptibility measurements reveal Pauli paramagnetism for Y_4Rh_9Ga_5 and Curie-Weiss paramagnetism for Gd_4Rh_9Ga_5 and Tb_4Rh_9Ga_5. Low-temperature data show ferromagnetic ordering at T_C=78.1 (Gd_4Rh_9Ga_5) and 55.8 K (Tb_4Rh_9Ga_5).

  12. Bi2(Sr, Ln)2CuOz (Ln = Nd, Sm) phases: stability, crystal growth and superconducting properties

    International Nuclear Information System (INIS)

    Faqir, H.; Kikuchi, M.; Syono, Y.; Mansori, M.; Satre, P.; Sebaoun, A.; Vacquier, G.

    2000-01-01

    Bi 2 (Sr,Ln) 2 CuO z (Ln = Nd, Sm) single crystals were successfully grown by a self-flux method from stoichiometric and (Bi, Cu)-rich melts. Thermal analysis and thermogravimetry were used to determine stability and the melting sequence of Bi 2 (Sr,Ln) 2 CuO z phases in air. As-grown crystals of the ideal Bi 2 (Sr,Ln) 2 CuO z phase, of dimensions 1x0.5x0.03 mm 3 , exhibit superconducting behaviour with critical temperature T c = 21 K for the Bi 1.9 Sr 1.6 Nd 0.6 CuO z crystal and Tc = 14 K for the Bi 1.8 Sr 1.6 Sm 0.6 CuO z crystal. The compositions of these crystals were homogeneous and close to the stoichiometric composition. We report on the growth of Bi 2 Sr 2-x Sm x CuO z single crystals of large dimensions 9x3x0.03 mm 3 using Bi 2 Sr 1.5 Sm 0.5 CuO z as precursor and Bi 2 CuO 4 as flux. (author)

  13. Synthesis and characterization of K2Ln2/3Ta2O7·nH2O (Ln= La, Pr, Nd), layered tantalates photo catalysts for water splitting

    International Nuclear Information System (INIS)

    Valencia S, H.; Tavizon, G.; Pfeiffer, H.; Acosta, D.; Negron M, A.

    2015-01-01

    Three compounds of the K 2 Ln 2/3 Ta 2 O 7 (Ln = La, Nd, Pr) cation-deficient Ruddlesden-Popper series were prepared by the Pechini (polymeric complex) method. The crystal structures of the hydrated form of these compounds were determined by Rietveld analysis of the X-ray power diffraction data and High Resolution Transmission Electron Microscopy (HRTEM). The samples were also analyzed to determine specific area (Bet), degree of hydration (Thermogravimetric analysis), and photo catalytic activity for hydrogen evolution from water and aqueous methanol solution. (Author)

  14. Hetero-metallic {3d-4f-5d} complexes: preparation and magnetic behavior of trinuclear [(L(Me2)Ni-Ln){W(CN)(8)}] compounds (Ln = Gd, Tb, Dy, Ho, Er, Y; L(Me2) = Schiff base) and variable SMM characteristics for the Tb derivative.

    Science.gov (United States)

    Sutter, Jean-Pascal; Dhers, Sébastien; Rajamani, Raghunathan; Ramasesha, S; Costes, Jean-Pierre; Duhayon, Carine; Vendier, Laure

    2009-07-06

    Assembling bimetallic {Ni-Ln}(3+) units and {W(CN)(8)}(3-) is shown to be an efficient route toward heteronuclear {3d-4f-5d} compounds. The reaction of either the binuclear [{L(Me2)Ni(H(2)O)(2)}{Ln(NO(3))(3)}] complexes or their mononuclear components [L(Me2)Ni] and Ln(NO(3))(3) with (HNBu(3))(3){W(CN)(8)} in dmf followed by diffusion of tetrahydrofuran yielded the trinuclear [{L(Me2)NiLn}{W(CN)(8)}] compounds 1 (Ln = Y), 2a,b (Gd), 3a,b (Tb), 4 (Dy), 5 (Ho), and 6 (Er) as crystalline materials. All of the derivatives possess the trinuclear core resulting from the linkage of the {W(CN)(8)} to the Ni center of the {Ni-Ln} unit. Differences are found in the solvent molecules acting as ligands and/or in the lattice depending on the crystallization conditions. For all the compounds ferromagnetic {Ni-W} and {Ni-Ln} (Ln = Gd, Tb, Dy, and Er} interactions are operative resulting in high spin ground states. Parameterization of the magnetic behaviors for the Y and Gd derivatives confirmed the strong cyano-mediated {Ni-W} interaction (J(NiW) = 27.1 and 28.5 cm(-1)) compared to the {Ni-Gd} interaction (J(NiGd) = 2.17 cm(-1)). The characteristic features for slow relaxation of the magnetization are observed for two Tb derivatives, but these are modulated by the crystal phase. Analysis of the frequency dependence of the alternating current susceptibility data yielded U(eff)/k(B) = 15.3 K and tau(0) = 4.5 x 10(-7) s for one derivative whereas no maxima of chi(M)'' appear above 2 K for the second one.

  15. Structure of Ga2O3(ZnO)6: a member of the homologous series Ga2O3(ZnO)m

    International Nuclear Information System (INIS)

    Michiue, Yuichi; Kanke, Yasushi; Kimizuka, Noboru

    2008-01-01

    The structure of Ga 2 O 3 (ZnO) 6 was determined using singlecrystal X-ray diffraction techniques in the space group Cmcm. The metal ion sublattice resembles some of the Zn ions in the wurtzite ZnO structure. The oxygen ion sublattice in Ga 2 O 3 (ZnO) 6 also resembles some of the O ions in ZnO. Structural relationships between Ga 2 O 3 (ZnO) 6 and ZnO are discussed, illustrating the process for obtaining the centrosymmetric Ga 2 O 3 (ZnO) 6 structure from the noncentrosymmetric ZnO. Structures of phases in the homologous series Ga 2 O 3 (ZnO) m are predicted on the basis of the structural data for Ga 2 O 3 (ZnO) 6 . The structures of even m are constructed by simply extending the structure units seen in Ga 2 O 3 (ZnO) 6 , while those of odd m consist of structure units which are of different types from those used for even m. (orig.)

  16. Validation of the CQU-DTU-LN1 series of airfoils

    DEFF Research Database (Denmark)

    Shen, Wen Zhong; Zhu, Wei Jun; Fischer, Andreas

    2014-01-01

    The CQU-DTU-LN1 series of airfoils were designed with an objective of high lift and low noise emission. In the design process, the aerodynamic performance is obtained using XFOIL while noise emission is obtained with the BPM model. In this paper we present some validations of the designed CQU......, the designed Cl and Cl/Cd agrees well with the experiment and are in general higher than those of the NACA airfoil. For the acoustic features, the noise emission of the LN118 airfoil is compared with the acoustic measurements and that of the NACA airfoil. Comparisons show that the BPM model can predict...

  17. Ab-initio study of the stability of the D8{sub m}-Nb{sub 5}Sn{sub 2}Ga and D8{sub m}-Ta{sub 5}SnGa{sub 2} compounds

    Energy Technology Data Exchange (ETDEWEB)

    Colinet, Catherine, E-mail: ccolinet@simap.grenoble-inp.fr [Science et Ingénierie des Matériaux et Procédés, Grenoble INP, UJF, CNRS, 38402 Saint Martin d’Hères Cedex (France); Tedenac, Jean-Claude [Institut de Chimie Moléculaire et des Matériaux I.C.G., UMR-CNRS 5253, Université Montpellier II, Place E. Bataillon, 34095 Montpellier Cedex 5 (France)

    2015-03-15

    Graphical abstract: Thermodynamic data along the sections Ta{sub 5}Sn{sub 3}–Ta{sub 5}Ga{sub 3} at low and high temperature. - Highlights: • First principles calculations were performed along sections V{sub 5}Sn{sub 3}–V{sub 5}Ga{sub 3}, Nb{sub 5}Sn{sub 3}–Nb{sub 5}Ga{sub 3}, and Ta{sub 5}Sn{sub 3}–Ta{sub 5}Ga{sub 3}. • The ternary compound D8{sub m}-Nb{sub 5}Sn{sub 2}Ga is stable. • The phase D8{sub m}-Ta{sub 5}SnGa{sub 2} is stable in the D8{sub m} structure. • In this phase, the Sn and Ga atoms share the 8h sites. - Abstract: First principles calculations have been performed in the T–Sn–Ga (T = V, Nb, Ta) systems along the section x{sub T} = 0.625. The enthalpies of formation of the binary and ternary D8{sub m}, D8{sub 1}, and D8{sub 8} structures have been calculated. In the V–Sn–Ga system, no ternary structure is stable in the section. In the Nb–Sn–Ga system, the ternary compound D8{sub m}-Nb{sub 5}Sn{sub 2}Ga is stable. In the Ta–Sn–Ga system, a combination of the ab-initio calculations and Gibbs energy calculations using the sublattice model allows the show that the phase D8{sub m}-Ta{sub 5}(Sn,Ga){sub 2}Ga with a mixed occupancy of the 8h sites of the structure by Ga and Sn atoms is stable at high temperature due to the configurational entropy. These results are in agreement with the experimental determinations previously published in the literature.

  18. Phase relations and crystal structures in the systems (Bi,Ln)2WO6 and (Bi,Ln)2MoO6 (Ln=lanthanide)

    International Nuclear Information System (INIS)

    Berdonosov, Peter S.; Charkin, Dmitri O.; Knight, Kevin S.; Johnston, Karen E.; Goff, Richard J.; Dolgikh, Valeriy A.; Lightfoot, Philip

    2006-01-01

    Several outstanding aspects of phase behaviour in the systems (Bi,Ln) 2 WO 6 and (Bi,Ln) 2 MoO 6 (Ln=lanthanide) have been clarified. Detailed crystal structures, from Rietveld refinement of powder neutron diffraction data, are provided for Bi 1.8 La 0.2 WO 6 (L-Bi 2 WO 6 type) and BiLaWO 6 , BiNdWO 6 , Bi 0.7 Yb 1.3 WO 6 and Bi 0.7 Yb 1.3 WO 6 (all H-Bi 2 WO 6 type). Phase evolution within the solid solution Bi 2- x La x MoO 6 has been re-examined, and a crossover from γ(H)-Bi 2 MoO 6 type to γ-R 2 MoO 6 type is observed at x∼1.2. A preliminary X-ray Rietveld refinement of the line phase BiNdMoO 6 has confirmed the α-R 2 MoO 6 type structure, with a possible partial ordering of Bi/Nd over the three crystallographically distinct R sites. - Graphical abstract: A summary of phase relations in the lanthanide-doped bismuth tungstate and bismuth molybdate systems is presented, together with some additional structural data on several of these phases

  19. III-Nitrides growth and AlGaN/GaN heterostructures on ferroelectric materials

    International Nuclear Information System (INIS)

    Lee, Kyoung-Keun; Namkoong, Gon; Madison, Shannon M.; Ralph, Stephen E.; Doolittle, W. Alan; Losurdo, Maria; Bruno, Giovanni; Cho, Hyung Koun

    2007-01-01

    The growth of III-nitrides on the ferroelectric materials lithium niobate (LN) and lithium tantalate (LT) via molecular beam epitaxy (MBE) using rf plasma source has been investigated. We have found that gallium nitride (GaN) epitaxial layers have a crystalline relationship with lithium niobate (tantalate) as follows: (0 0 0 1) GaN || (0 0 0 1) LN (LT) with [10-10] GaN || [11-20] LN (LT). The surface stability of LN and LT substrates has been monitored by in situ spectroscopic ellipsometry in the vacuum chamber. Three different temperature zones have been discerned; surface degas and loss of OH group (100-350 deg. C); surface segregation/accumulation of Li and O-species (400-700 deg. C); surface evaporation of O-species and Li desorption (over 750 deg. C). However, LT shows only surface degassing in the range of 100-800 deg. C. Therefore, congruent LN substrates were chemically unstable at the growth temperature of 550-650 deg. C, and therefore developed an additional phase of Li-deficient lithium niobate (LiNb 3 O 8 ) along with lithium niobate (LiNbO 3 ), confirmed by X-ray diffraction. On the other hand, LT showed better chemical stability at these temperatures, with no additional phase development. The structural quality of GaN epitaxial layers has shown slight improvement on LT substrates over LN substrates, according to X-ray diffraction. Herein, we demonstrate AlGaN/GaN heterostructure devices on ferroelectric materials that will allow future development of multifunctional electrical and optical applications

  20. III-Nitrides growth and AlGaN/GaN heterostructures on ferroelectric materials

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kyoung-Keun [Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA 30332 (United States); Namkoong, Gon [Old Dominion University, Department of Electrical and Computer Engineering, Norfolk, VA 23529 (United States); Madison, Shannon M. [Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA 30332 (United States); Ralph, Stephen E. [Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA 30332 (United States); Doolittle, W. Alan [Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA 30332 (United States)]. E-mail: alan.doolittle@ece.gatech.edu; Losurdo, Maria [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, Department of Chemistry, University of Bari, via Orabona, 4 70126 Bari (Italy); Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, Department of Chemistry, University of Bari, via Orabona, 4 70126 Bari (Italy); Cho, Hyung Koun [Department of Materials Science and Engineering, Sung Kyun Kwan University, Suwon 440-746 (Korea, Republic of)

    2007-06-15

    The growth of III-nitrides on the ferroelectric materials lithium niobate (LN) and lithium tantalate (LT) via molecular beam epitaxy (MBE) using rf plasma source has been investigated. We have found that gallium nitride (GaN) epitaxial layers have a crystalline relationship with lithium niobate (tantalate) as follows: (0 0 0 1) GaN || (0 0 0 1) LN (LT) with [10-10] GaN || [11-20] LN (LT). The surface stability of LN and LT substrates has been monitored by in situ spectroscopic ellipsometry in the vacuum chamber. Three different temperature zones have been discerned; surface degas and loss of OH group (100-350 deg. C); surface segregation/accumulation of Li and O-species (400-700 deg. C); surface evaporation of O-species and Li desorption (over 750 deg. C). However, LT shows only surface degassing in the range of 100-800 deg. C. Therefore, congruent LN substrates were chemically unstable at the growth temperature of 550-650 deg. C, and therefore developed an additional phase of Li-deficient lithium niobate (LiNb{sub 3}O{sub 8}) along with lithium niobate (LiNbO{sub 3}), confirmed by X-ray diffraction. On the other hand, LT showed better chemical stability at these temperatures, with no additional phase development. The structural quality of GaN epitaxial layers has shown slight improvement on LT substrates over LN substrates, according to X-ray diffraction. Herein, we demonstrate AlGaN/GaN heterostructure devices on ferroelectric materials that will allow future development of multifunctional electrical and optical applications.

  1. First-principle calculations of the structural, elastic and bonding properties of Cs{sub 2}NaLnCl{sub 6} (Ln=La–Lu) cubic elpasolites

    Energy Technology Data Exchange (ETDEWEB)

    Ma, C.G.; Liu, D.X.; Feng, B.; Tian, Y.; Li, L. [College of Sciences, Chongqing University of Posts and Telecommunications, Chongqing 400065 (China); Brik, M.G., E-mail: mikhail.brik@ut.ee [College of Sciences, Chongqing University of Posts and Telecommunications, Chongqing 400065 (China); Institute of Physics, University of Tartu, Ravila 14C, Tartu 50411 (Estonia); Institute of Physics, Jan Dlugosz University, Armii Krajowej 13/15, PL-42200 Czestochowa (Poland)

    2016-01-15

    For the first time the structural, elastic and bonding properties of 15 elpasolite crystals Cs{sub 2}NaLnCl{sub 6} (Ln denotes all lanthanides from La to Lu) were calculated systematically using the CRYSTAL09 program. Several trends in the variation of these properties in relation to the atomic number Z of the Ln ions were found; in particular, the lattice parameter of these compounds decreases with Z (which can lead to the increased crystal field splittings of the 5d states for the heavier Ln ions), whereas the elastic constants and Debye temperature increase. The degree of covalency of the Ln–Cl chemical bonds is increased toward the end of the lanthanide series. - Highlights: • Structural, elastic and bonding properties of 15 cubic elpasolites Cs{sub 2}NaLnCl{sub 6} (Ln=La,…,Lu) are calculated. • Relations between these quantities and Ln atomic number were found. • Possible correlation between the elastic properties and Stokes shift is proposed.

  2. Low-Temperature Transformations of Protonic Forms of Layered Complex Oxides HLnTiO4 and H2Ln2Ti3O10 (Ln = La, Nd)

    International Nuclear Information System (INIS)

    Abdulaeva, L.D.; Silyukov, O.I.; Zvereva, I.A.; Petrov, Yu.V.

    2013-01-01

    In the present work protonic forms of layered Ruddlesden-Popper oxides HLnTiO 4 and H 2 Ln 2 Ti 3 O 10 (Ln = La, Nd) were used as the starting point for soft chemistry synthesis of two series of perovskite-like compounds by acid leaching and exfoliation, promoted by vanadyl sulfate. The last route leads to the nano structured VO 2+ containing samples. Characterization by SEM, powder XRD, and TGA has been performed for the determination of the structure and composition of synthesized oxides

  3. Effect of Ca substitution on the electrochemical properties of the Ruddlesden-Popper oxides Sr3.2-xCaxLn0.8Fe1.5Co1.5O10-δ

    Science.gov (United States)

    Padmasree, K. P.; Lai, Ke-Yu; Kaveevivitchai, Watchareeya; Manthiram, Arumugam

    2018-01-01

    The Ruddlesden-Popper (R-P) oxides Sr3.2-xCaxLn0.8Fe1.5Co1.5O10-δ with x = 0 and 0.4 and Ln = La, Pr, and Nd, have been synthesized and the effect of Ca on their electrochemical properties as cathodes in solid oxide fuel cells (SOFC) has been investigated. The substitution of Ca for Sr in Sr3.2-xCaxLn0.8Fe1.5Co1.5O10-δ decreases the amount of oxygen loss on heating and the thermal expansion coefficient (TEC). The phase instability of these materials at high temperature is a significant issue that restricts their application as SOFC cathodes, and the substitution of Ca effectively stabilizes the Sr3.2-xCaxLn0.8Fe1.5Co1.5O10-δ phase at 800 °C. Among the different lanthanides with and without Ca in Sr3.2-xCaxLn0.8Fe1.5Co1.5O10-δ, the Ln = Nd samples exhibit an enhancement in cathode performance in SOFC compared to Ln = La and Pr samples, which may be attributed to the higher concentration of oxygen vacancies in the Ln = Nd samples. Comparing the various compositions studied, the Sr2.8Ca0.4Nd0.8Fe1.5Co1.5O10-δ cathode material exhibits superior performance in SOFC with good phase stability.

  4. Red emitting phosphors of Eu3+ doped Na2Ln2Ti3O10 (Ln = Gd, Y) for white light emitting diodes

    International Nuclear Information System (INIS)

    Zhang, Niumiao; Guo, Chongfeng; Yin, Luqiao; Zhang, Jianhua; Wu, Mingmei

    2015-01-01

    Highlights: • Layered red phosphors Na 2 Ln 2 Ti 3 O 10 (Ln = Gd, Y):Eu 3+ were prepared. • The synthesis parameters of phosphors were optimized. • PL and thermal stability of the samples were investigated. • LED devices were also fabricated including the present red phosphor. - Abstract: A series of Eu 3+ doped Na 2 Ln 2 Ti 3 O 10 (Ln = Gd, Y) red-emitting phosphors for application in ultraviolet based light emitting diodes (LEDs) were successfully synthesized by a modified sol–gel method. Their structure and luminescent properties were characterized by powder X-ray diffraction (XRD), photoluminescence excitation (PLE) and emission (PL) spectra and absorption spectra, according to these results the optimal compositions and synthesis parameters were determined. In addition, the thermal stabilities of the phosphors were investigated according to the temperature-dependent PL spectra. The red and white-LEDs (W-LEDs) comprising the Na 2 Ln 2 Ti 3 O 10 :Eu 3+ (Ln = Gd, Y) red emitting phosphors were fabricated with a near-ultraviolet (n-UV) chip. In comparison with Na 2 Y 1.4 Eu 0.6 Ti 3 O 10 , the Na 2 Gd 0.6 Eu 1.4 Ti 3 O 10 phosphor offers higher brightness, quantum efficiency, and excellent thermal stability. W-LEDs comprising Na 2 Gd 0.6 Eu 1.4 Ti 3 O 10 showed bright white emission with a color rendering index (Ra) of 82, a color temperature of 2151 K, and Commission Internationale de I’Eclairage (CIE) color coordinates of (0.34, 0.37). The phosphor Na 2 Gd 0.6 Eu 1.4 Ti 3 O 10 is more suitable candidate for application in LEDs

  5. Effect of ligand substitution on the SMM properties of three isostructural families of double-cubane Mn4Ln2 coordination clusters.

    Science.gov (United States)

    Akhtar, Muhammad Nadeem; Lan, Yanhua; AlDamen, Murad A; Zheng, Yan-Zhen; Anson, Christopher E; Powell, Annie K

    2018-03-06

    Three isostructural lanthanide series with a core of MnMnLn 2 are reported. These three families have the formulae of [MnMnLn 2 (μ 4 -O) 2 (H 2 edte) 2 (piv) 6 (NO 3 ) 2 ] {no crystallization solvent, Ln = La, Ce, Pr, Nd, Eu (1-4, 6); solv = 3MeCN, Ln = Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Y (5, 7-13)}, where H 2 edte = N,N,N',N'-tetrakis(2-hydroxyethyl)ethylenediamine and piv = pivalate; [MnMnLn 2 (μ 4 -O) 2 (H 2 edte) 2 (benz) 6 (NO 3 ) 2 ], where benz = benzoate, or [MnMnLn 2 (μ 4 -O) 2 (edteH 2 ) 2 (benz) 6 (NO 3 ) 22MeCN {Ln = Gd, Tb, Dy (14-16); and [MnMnLn 2 (μ 4 -O) 2 (edteH 2 ) 2 (piv) 8 ].solv {solv = 4MeCN, Ln = La (17); solv = 2MeCN·tol·H 2 O, Ln = Pr, Nd, Sm, Tb (18-20, 22); solv = 2MeCN·H 2 O, Ln = Gd (21). These compounds crystallize in two different systems, namely, monoclinic in the space groups P2 1 /n for 1-4, 6, and 14-16 and C2/c for 5, 7-13, 18-20, and 22 and triclinic in the space group P1[combining macron] for 17 and 21. The crystal structures of these compounds display a face-fused dicubane structure connected by different types of bridged oxygen atoms. Solid-state dc magnetic susceptibility characterization was carried out for 1-22, and fitting showed that Mn III Mn III is antiferromagnetically (AF) coupled and Mn II Mn III , Mn II Ln and Mn III Ln are weakly ferromagnetically coupled. In addition, ac measurements were carried out and showed that only 7, 15, and 22 for Tb, 8 and 16 for Dy, and 20 for Sm exhibited slow magnetization relaxation. In the case of 15, it was possible to determine the energy barrier of the slow-relaxation behavior by fitting peak temperatures to the Arrhenius law, which gave a value of U eff = 21.2 K and a pre-exponential factor of τ 0 = 4.0 × 10 -9 s.

  6. Electrical conductivity of cobalt doped La 0.8Sr 0.2Ga 0.8Mg 0.2O 3- δ

    Science.gov (United States)

    Wang, Shizhong; Wu, Lingli; Liang, Ying

    La 0.8Sr 0.2Ga 0.8Mg 0.2O 3- δ (LSGM8282), La 0.8Sr 0.2Ga 0.8Mg 0.15Co 0.05O 3- δ (LSGMC5) and La 0.8Sr 0.2Ga 0.8Mg 0.115Co 0.085O 3- δ (LSGMC8.5) were prepared using a conventional solid-state reaction. Electrical conductivities and electronic conductivities of the samples were measured using four-probe impedance spectrometry, four-probe dc polarization and Hebb-Wagner polarization within the temperature range of 973-1173 K. The electrical conductivities in LSGMC5 and LSGMC8.5 increased with decreasing oxygen partial pressures especially in the high (>10 -5 atm) and low oxygen partial pressure regions (lanthanum gallate samples increased with increasing concentration of cobalt, suggesting that the concentration of cobalt should be optimized carefully to maintain a high electrical conductivity and close to 1 oxygen ion transference number.

  7. A new continuous two-step molecular precursor route to rare-earth oxysulfides Ln2O2S

    International Nuclear Information System (INIS)

    De Crom, N.; Devillers, M.

    2012-01-01

    A continuous two-step molecular precursor pathway is designed for the preparation of rare-earth oxysulfides Ln 2 O 2 S (Ln=Y, La, Pr, Nd, Sm–Lu). This new route involves a first oxidation step leading to the rare-earth oxysulfate Ln 2 O 2 SO 4 which is subsequently reduced to the rare-earth oxysulfide Ln 2 O 2 S by switching to a H 2 –Ar atmosphere. The whole process occurs at a temperature significantly lower than usual solid state synthesis (T≤650 °C) and avoids the use of dangerous sulfur-based gases, providing a convenient route to the synthesis of the entire series of Ln 2 O 2 S. The molecular precursors consist in heteroleptic dithiocarbamate complexes [Ln(Et 2 dtc) 3 (phen)] and [Ln(Et 2 dtc) 3 (bipy)] (Et 2 dtc=N,N-diethyldithiocarbamate; phen=1,10-phenanthroline; bipy=2,2′-bipyridine) and were synthesized by a new high yield and high purity synthesis route. The nature of the molecular precursor determines the minimum synthesis temperature and influences therefore the purity of the final Ln 2 O 2 S crystalline phase. - Graphical abstract: A continuous two-step molecular precursor pathway was designed for the preparation of rare-earth oxysulfides Ln 2 O 2 S (Ln=Y, La, Pr, Nd, Sm–Lu), starting from heteroleptic dithiocarbamate complexes. The influence of the nature of the molecular precursor on the minimum synthesis temperature and on the purity of the final Ln 2 O 2 S crystalline phase is discussed. Highlights: ► A new high yield and high purity synthesis route of rare earth dithiocarbamates is described. ► These compounds are used as precursors in a continuous process leading to rare-earth oxysulfides. ► The oxysulfides are obtained under much more moderate conditions than previously described.

  8. Synthesis and characterization of K{sub 2}Ln{sub 2/3}Ta{sub 2}O{sub 7}·nH{sub 2}O (Ln= La, Pr, Nd), layered tantalates photo catalysts for water splitting

    Energy Technology Data Exchange (ETDEWEB)

    Valencia S, H.; Tavizon, G. [UNAM, Instituto de Quimica, Ciudad Universitaria, 04510 Ciudad de Mexico (Mexico); Pfeiffer, H. [UNAM, Instituto de Investigaciones en Materiales, Ciudad Universitaria, 04510 Ciudad de Mexico (Mexico); Acosta, D. [UNAM, Instituto de Fisica, Ciudad Universitaria, 04510 Ciudad de Mexico (Mexico); Negron M, A., E-mail: hvalencia@utp.edu.co [UNAM, Instituto de Ciencias Nucleares, Ciudad Universitaria, 04510 Ciudad de Mexico (Mexico)

    2015-07-01

    Three compounds of the K{sub 2}Ln{sub 2/3}Ta{sub 2}O{sub 7} (Ln = La, Nd, Pr) cation-deficient Ruddlesden-Popper series were prepared by the Pechini (polymeric complex) method. The crystal structures of the hydrated form of these compounds were determined by Rietveld analysis of the X-ray power diffraction data and High Resolution Transmission Electron Microscopy (HRTEM). The samples were also analyzed to determine specific area (Bet), degree of hydration (Thermogravimetric analysis), and photo catalytic activity for hydrogen evolution from water and aqueous methanol solution. (Author)

  9. Functionalized cobalt bis(dicarbollide) ions as selective extraction reagents for removal of M2+ and M3+ cations from nuclear waste, crystal and molecular structures of the [8,8 '-mu-CIP(O)(O)(2)(1,2-C2B9H10)(2)-3,3 '-Co]HN(C2H5)(3) and [8,8 '-mu-Et2NP(O)(O)(2) (1,2-C2B9H10)(2)-3,3 '-Co](HN(CH3)(3))

    Czech Academy of Sciences Publication Activity Database

    Plešek, Jaromír; Grüner, Bohumír; Císařová, I.; Báča, Jiří; Selucký, P.; Rais, J.

    2002-01-01

    Roč. 657, 1-2 (2002), s. 59-70 ISSN 0022-328X R&D Projects: GA ČR GA104/99/1096; GA ČR GA104/01/0142; GA ČR GA203/99/M037; GA MŠk LN00A028 Institutional research plan: CEZ:AV0Z4032918 Keywords : carboranes * metallaboranes * liquid-liquid extraction Subject RIV: CA - Inorganic Chemistry Impact factor: 1.901, year: 2002

  10. Electronic properties of GaV 4 S 8

    Indian Academy of Sciences (India)

    ... different in GaV4S8-1 and GaV4S8-2. This statement is strongly supported by the calculated bandwidth per cluster in GaV4S8 (∼0.342 eV in GaV4S8-1 and ∼0.374 eV in GaV4S8-2). A negative magnetoresistance (MR) is also found around 43 K in GaV4S8-2 at 6.0 T magnetic field associated with structural transition.

  11. Single-ion 4f element magnetism: an ab-initio look at Ln(COT)2(-).

    Science.gov (United States)

    Gendron, Frédéric; Pritchard, Benjamin; Bolvin, Hélène; Autschbach, Jochen

    2015-12-14

    The electron densities associated with the Ln 4f shell, and spin and orbital magnetizations ('magnetic moment densities'), are investigated for the Ln(COT)2(-) series. The densities are obtained from ab-initio calculations including spin-orbit coupling. For Ln = Ce, Pr the magnetizations are also derived from crystal field models and shown to agree with the ab-initio results. Analysis of magnetizations from ab-initio calculations may be useful in assisting research on single molecule magnets.

  12. Crystallization of rare earth germanates in the K2O-Ln2O3-GeO2-H2O at 280 deg C

    International Nuclear Information System (INIS)

    Panasenko, E.B.; Begunova, R.G.; Sklokina, N.F.

    1980-01-01

    Crystallization of rare earth germanates in potassium hydroxide solutions is studied at 280 deg C. Stability limits for different crystalline phases are established. Diorthogermanates Ln 2 O 3 x2GeO 3 (three structural modifications) are formed with all lanthanides except lanthanum. Germanates-apatites 7Ln 2 O 3 x9GeO 2 are characteristic for ''large'' lanthanides La-Nd. Alkali germanate of the composition 0.5 K 2 OxLn 2 O 3 xGeO 2 xnH 2 O is realized with the elements of the end of rare earth series, i.e., Tm-Lu. Some properties of the germanates synthesized are considered [ru

  13. Syntheses, crystal structures and solid-state properties of the lanthanoid-containing nanoclusters [(Ln{sub 2}PW{sub 10}O{sub 38}){sub 4}(W{sub 3}O{sub 8})(OH){sub 4}(H{sub 2}O){sub 2}]{sup 26-}

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Rakesh; Saini, Mukesh Kumar; Hussain, Firasat [Department of Chemistry, University of Delhi (India)

    2014-12-15

    A series of lanthanoid-substituted polyoxometalates have been synthesized by a self-assembly process in potassium chloride solution by the reaction of dilacunary [P{sub 2}W{sub 19}O{sub 69}(H{sub 2}O)]{sup 14-} with mid- and late-lanthanoid Ln(NO{sub 3}){sub 3}.nH{sub 2}O salts leading to the formation of the tetrameric tungstophosphates [(Ln{sub 2}PW{sub 10}O{sub 38}){sub 4}(W{sub 3}O{sub 8})(OH){sub 4}(H{sub 2}O){sub 2}]{sup 26-} [Ln = Y{sup 3+} (1), Sm{sup 3+} (2), Eu{sup 3+} (3), Gd{sup 3+} (4), Tb{sup 3+} (5), Dy{sup 3+} (6), Ho{sup 3+} (7), Er{sup 3+} (8), Tm{sup 3+} (9), Yb{sup 3+} (10)]. The polyanions were isolated as potassium or mixed-alkali salts. Most of the compounds were characterized by single-crystal X-ray diffraction and various analytical techniques, such as FTIR, UV/Vis, {sup 31}P NMR and photoluminescence spectroscopy, magnetism, as well as thermogravimetric analysis. The FTIR spectra suggest that all the compounds are isomorphous. The crystal structures of these complexes consist of four A-[α-PW{sub 10}O{sub 36}]{sup 7-} units, each incorporating two Ln{sup III} ions to create four Keggin-like anions that further assemble with three additional tungstate units to form a tetramer species with C{sub 2} symmetry. The photoluminescent properties of 3a and 6a were investigated following photoexcitation at room temperature. The magnetic properties of 3a, 4a, 5a and 6a were investigated at room temperature, the complexes exhibiting paramagnetic behaviour. (Copyright copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Interakce dopaminového D1/D2 receptoru s glutamátovým receptorem NMDA typu: od molekul k animálním modelům schizofrenie

    Czech Academy of Sciences Publication Activity Database

    Šťastný, František; Tejkalová, H.; Skuba, I.; Páleníček, T.; Pliss, L.; Mareš, Vladislav; Krištofíková, Z.; Kaiser, M.; Höschl, C.; Bubeníková, V.; Balcar, V. J.

    2004-01-01

    Roč. 8, Suppl. 3 (2004), s. 32-41 ISSN 1211-7579 R&D Projects: GA MŠk LN00B122; GA MZd NF6031; GA MZd NF7626 Institutional research plan: CEZ:AV0Z5011922 Keywords : schizophrenia * glutamate * dopamine Subject RIV: CD - Macromolecular Chemistry

  15. Efficient NIR (near-infrared) luminescent ZnLn-grafted (Ln=Nd, Yb or Er) PNBE (Poly(norbornene))

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Lin; Feng, Hei-Ni; Fu, Guo-Rui; Li, Bao-Ning [School of Chemical Engineering, Shaanxi Key Laboratory of Degradable Medical Material, Northwest University, Xi’an 710069, Shaanxi (China); Lü, Xing-Qiang, E-mail: lvxq@nwu.edu.cn [School of Chemical Engineering, Shaanxi Key Laboratory of Degradable Medical Material, Northwest University, Xi’an 710069, Shaanxi (China); Wong, Wai-Kwok [Department of Chemistry, Hong Kong Baptist University, Waterloo Road, Kowloon Tong, Hong Kong (China); Jones, Richard A. [Department of Chemistry and Biochemistry, The University of Texas at Austin, 1 University Station A5300, Austin, TX 78712-0165 (United States)

    2017-06-15

    Through the ring-opening metathesis polymerization (ROMP) of norbornene (NBE) with each of allyl-containing complex monomers [Zn(L){sub 2}(µ{sub 1}-OAc)Ln(µ{sub 2}-OAc){sub 2}] (Ln=La, 1; Nd, 2; Yb, 3; Er, 4 or Gd, 5; HL=4-allyl-2-(1H-benzo[d]imidazol-2-yl)-6-methoxyphenol), a series of ZnLn-grafted polymers Poly([Zn(L){sub 2}(µ{sub 1}-OAc)Ln(µ{sub 2}-OAc){sub 2}]-co-NBE) with desired physical properties were obtained, respectively. Within near-infrared (NIR) luminescent polymers, Poly(3-co-NBE) endows an attractive quantum yield of 1.47% in solid state, and exhibits an effective prevention of high-concentration self-quenching. - Graphical abstract: Through grafting of [Zn(L){sub 2}(µ{sub 1}-OAc)Ln(µ{sub 2}-OAc){sub 2}] (Ln=Nd, 2; Yb, 3 or Er, 4) into PNBE with desired physical properties including NIR luminescence, Poly(3-co-NBE) exhibits an attractive quantum yield of 1.47% and an effective emitters' clustering prevention.

  16. Lattice dynamics of cubic Cs2NaLnX6 and CsNaLn1-xLn'xX6 elpasolites

    International Nuclear Information System (INIS)

    Acevedo, R.; Poblete, V.; Alzamora, R.; Venegas, R.; Navarro, G.; Henriquez, C.

    1999-01-01

    Crystal lattice dynamics of stoichiometric Cs 2 NaLnX 6 and nonstoichiometric CsNaLn 1-x Ln' x X 6 , 0.01 ≤ x ≤ 0.10, Ln and Ln' are trivalent positive lanthanide ions and X is chlorine or bromine, were studied.. Phonon dispersion relations were computed for similar compound, Cs 2 UBr 6 , and vibronic absorption spectra with reduced number of required input parameters are considered on the basis of proposed model. (author)

  17. Diferratricarbaboranes of the subcloso-[eta(5)-C5H5)(2)Fe2C3B8H11] type, the first representatives of the 13-vertex dimetallatricarbaborane series

    Czech Academy of Sciences Publication Activity Database

    Grüner, Bohumír; Štíbr, Bohumil; Kivekäs, R.; Sillanpää, R.; Stopka, Pavel; Teixidor, F.; Vinas, C.

    2003-01-01

    Roč. 9, č. 24 (2003), s. 6115-6121 ISSN 0947-6539 R&D Projects: GA MŠk LN00A028; GA ČR GA203/00/1042; GA ČR GA203/01/0944 Institutional research plan: CEZ:AV0Z4032918 Keywords : boranes * carboranes * cluster compounds Subject RIV: CA - Inorganic Chemistry Impact factor: 4.353, year: 2003

  18. Na{sub 8}Au{sub 9.8(4)}Ga{sub 7.2} and Na{sub 17}Au{sub 5.87(2)}Ga{sub 46.63}: The diversity of pseudo 5-fold symmetries in the Na–Au–Ga system

    Energy Technology Data Exchange (ETDEWEB)

    Smetana, Volodymyr; Corbett, John D., E-mail: jcorbett@iastate.edu; Miller, Gordon J.

    2013-11-15

    The Na-rich part (∼30% Na) of the Na–Au–Ga system between NaAu{sub 2}, NaGa{sub 4}, and Na{sub 22}Ga{sub 39} has been found to contain the ternary phases Na{sub 8}Au{sub 9.8(4)}Ga{sub 7.2} (I) and Na{sub 17}Au{sub 5.87(2)}Ga{sub 46.63} (II), according to the results of single crystal X-ray diffraction measurements. I is orthorhombic, Cmcm, a=5.3040(1), b=24.519(5), c=14.573(3) Å, and contains a network of clusters with local 5-fold symmetry along the a-axis. Such clusters are frequent building units in decagonal quasicrystals and their approximants. II is rhombohedral, R3{sup ¯}m, a=16.325(2), c=35.242(7) Å, and contains building blocks that are structurally identical to the Bergman-type clusters as well as fused icosahedral units known with active metals, triels and late transition elements. II also contains a polycationic network with elements of the clathrate V type structure. Tight-binding electronic structure calculations using linear muffin–tin-orbital (LMTO) methods on idealized models of I and II indicate that both compounds are metallic with evident pseudogaps at the corresponding Fermi levels. The overall Hamilton bond populations are generally dominated by Au–Ga and Au–Au bonds in I and by Ga–Ga bonds in II; moreover, the Na–Au and Na–Ga contributions in I are unexpectedly large, ∼20% of the total. A similar involvement of sodium in covalent bonding has also been found in the electron-richer i-Na{sub 13}Au{sub 12}Ga{sub 15} quasicrystal approximant. - Graphical abstract: Multiply-endohedral Bergman-related clusters in the structure of Na{sub 17}Au{sub 5.9(1)}Ga{sub 46.6.} Display Omitted - Highlights: • Two new compounds with the local 5-fold symmetry have been investigated. • Na{sub 8}Au{sub 9.8(4)}Ga{sub 7.2} is an orthorhombic approximant of the Na{sub 13}Au{sub 12}Ga{sub 15} quasicrystal. • Na{sub 17}Au{sub 5.87(2)}Ga{sub 46.63} represents a rhombohedral distortion of the Bergman-type phases.

  19. Mixed nickel-gallium tellurides Ni{sub 3−x}GaTe{sub 2} as a matrix for incorporating magnetic cations: A Ni{sub 3−x}Fe{sub x}GaTe{sub 2} series

    Energy Technology Data Exchange (ETDEWEB)

    Kuznetsov, Alexey N., E-mail: alexei@inorg.chem.msu.ru [Department of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1-3, GSP-1, 119991 Moscow (Russian Federation); N.S. Kurnakov Institute of General and Inorganic Chemistry, RAS, Leninsky pr. 31, GSP-1, 119991 Moscow (Russian Federation); Stroganova, Ekaterina A.; Zakharova, Elena Yu; Solopchenko, Alexander V.; Sobolev, Alexey V.; Presniakov, Igor A. [Department of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1-3, GSP-1, 119991 Moscow (Russian Federation); Kirdyankin, Denis I.; Novotortsev, Vladimir M. [N.S. Kurnakov Institute of General and Inorganic Chemistry, RAS, Leninsky pr. 31, GSP-1, 119991 Moscow (Russian Federation)

    2017-06-15

    Using a high-temperature ampoule technique, a series of mixed nickel-iron-gallium metal-rich tellurides with layered structures, Ni{sub 3-x}Fe{sub x}GaTe{sub 2}, were prepared and characterized based on X-ray powder diffraction, energy-dispersive spectroscopy, and {sup 57}Fe Mössbauer spectroscopy data. These compounds may be regarded as a result of partial substitution of nickel by iron in the recently reported ternary Ni{sub 3-x}GaTe{sub 2} series, which are based on NiAs/Ni{sub 2}In type of structure. The compositional boundary for the substitution was found to be at x~1. According to the Mössbauer spectroscopy data, the substitution is not statistical, and iron atoms with the increase in x tend to preferentially occupy those nickel positions that are partially vacant in the initial ternary compound. Magnetic measurements data for the Ni{sub 3-x}Fe{sub x}GaTe{sub 2} series show dramatic change in behavior from temperature-independent paramagnetic properties of the initial matrix to a low-temperature (~75 K) ferromagnetic ordering in the Ni{sub 2}FeGaTe{sub 2}. - Graphical abstract: Ordered substitution of nickel by iron in the Ni{sub 3−x}GaTe{sub 2} series leading to ferromagnetic ordering. - Highlights: • A series of Ni{sub 3−x}Fe{sub x}GaTe{sub 2} compounds were synthesized. • They adopt the NiAs/Ni{sub 2}In type of structure with ordered iron distribution. • The distribution of iron was studied using {sup 57}Fe Mössbauer spectroscopy. • An increase in iron content leads to the strong ferromagnetic coupling.

  20. Synthesis, crystal structure and magnetic properties of U2RuGa8

    International Nuclear Information System (INIS)

    Grin', Yu.N.; Rogl', P.; Aksel'rud, L.G.; Pecharskij, V.K.; Yarmolyuk, Ya.P.

    1988-01-01

    Synthesis of a new uranium intermetallic compound of U 2 RuGa 8 composition was conducted. The compound crystallizes in Ho 2 CoGa 8 structural type, met earlier only in compounds of rare earths. Magnetic susceptibility of the compound is rather high and is practically independent of temperature in 80-300 K range. This feature is typical for paramagnetism of electron gas and testifies to the absence of localized magnetic moments on ruthenium and uranium atoms

  1. Synthesis and characterisation of the n = 2 Ruddlesden–Popper phases Ln2Sr(Ba)Fe2O7 (Ln = La, Nd, Eu)

    International Nuclear Information System (INIS)

    Gurusinghe, Nicola N.M.; Figuera, Juand de la; Marco, José F.; Thomas, Michael F.; Berry, Frank J.; Greaves, Colin

    2013-01-01

    Graphical abstract: - Highlights: • Some Ruddlesden–Popper phases have been characterised. • Substitution on the A site influences cationic order. • The magnetic moment redirects with temperature - Abstract: A series of n = 2 Ruddlesden–Popper phases A 2 B 2 O 7 of composition Ln 2 Sr(Ba)Fe 2 O 7 (Ln = La, Nd, Eu) have been prepared. La 2 SrFe 2 O 7 and La 2 BaFe 2 O 7 crystallise in the tetragonal space group I4/mmm. The structures of Eu 2 SrFe 2 O 7 and Nd 2 SrFe 2 O 7 are best described in space group P4 2 /mnm. Substitution on the A site with smaller lanthanide- and larger alkaline metal- ions leads to enhanced cationic order in these phases and reflects increasing differences in cationic radii. All the compounds are antiferromagnetically ordered between 298 and 2 K. In La 2 SrFe 2 O 7 the magnetic moment lies along [1 1 0] at all temperatures between 298 and 2 K whereas in La 2 BaFe 2 O 7 the magnetic moment at 298 K lies along the crystallographic x-axis but redirects from the [1 0 0] to the [1 1 0] direction between 210 and 190 K and is retained in this direction until 2 K. In Nd 2 SrFe 2 O 7 the magnetic moment at 298 K lies along [1 1 0] but rotates from [1 1 0] to [0 0 1] between 17 and 9 K. A series of 57 Fe Mössbauer spectra recorded from La 2 SrFe 2 O 7 between 290 and 600 K indicate a magnetic ordering temperature of T N ≥ 535 K

  2. Effect of lanthanide contraction on the mixed polyamine systems Ln/Sb/Se/(en+dien) and Ln/Sb/Se/(en+trien): Syntheses and characterizations of lanthanide complexes with a tetraelenidoantimonate ligand

    International Nuclear Information System (INIS)

    Zhao Jing; Liang Jingjing; Pan Yingli; Zhang Yong; Jia Dingxian

    2011-01-01

    Mixed polyamine systems Ln/Sb/Se/(en+dien) and Ln/Sb/Se/(en+trien) (Ln=lanthanide, en=ethylenediamine, dien=diethylenetriamine, trien=triethylenetetramine) were investigated under solvothermal conditions, and novel mixed-coordinated lanthanide(III) complexes [Ln(en) 2 (dien)(η 2 -SbSe 4 )] (Ln=Ce(1a), Nd(1b)), [Ln(en) 2 (dien)(SbSe 4 )] (Ln=Sm(2a), Gd(2b), Dy(2c)), [Ln(en)(trien)(μ-η 1 ,η 2 -SbSe 4 )] ∞ (Ln=Ce(3a), Nd(3b)) and [Sm(en)(trien)(η 2 -SbSe 4 )] (4a) were prepared. Two structural types of lanthanide selenidoantimonates were obtained across the lanthanide series in both en+dien and en+trien systems. The tetrahedral anion [SbSe 4 ] 3- acts as a monodentate ligand mono-SbSe 4 , a bidentate chelating ligand η 2 -SbSe 4 or a tridentate bridging ligand μ-η 1 ,η 2 -SbSe 4 to the lanthanide(III) center depending on the Ln 3+ ions and the mixed ethylene polyamines, indicating the effect of lanthanide contraction on the structures of the lanthanide(III) selenidoantimonates. The lanthanide selenidoantimonates exhibit semiconducting properties with E g between 2.08 and 2.51 eV. - Graphical Abstract: Two structural types of lanthanide(III) selenidoantimonates are formed in both en-dien and en-trien mixed polyamines across lanthanide series, indicating the lanthanide contraction effect on the structures of the lanthanide(III) selenidoantimonates. Highlights: → Two structural types of lanthanide selenidoantimonates are prepared across the lanthanide series in both Ln/Sb/Se/(en+dien) and Ln/Sb/Se/(en+trien) systems. → The [SbSe 4 ] 3- anion acts as a mono-SbSe 4 , a η 2 -SbSe 4 or a μ-η 1 ,η 2 -SbSe 4 ligand to the Ln 3+ ions. → The soft base ligand [SbSe 4 ] 3- can be controlled to coordinate to the Ln 3+ ions with en+dien and en+trien as co-ligands.

  3. Covalency in lanthanides. An X-ray absorption spectroscopy and density functional theory study of LnCl6(x-) (x = 3, 2).

    Science.gov (United States)

    Löble, Matthias W; Keith, Jason M; Altman, Alison B; Stieber, S Chantal E; Batista, Enrique R; Boland, Kevin S; Conradson, Steven D; Clark, David L; Lezama Pacheco, Juan; Kozimor, Stosh A; Martin, Richard L; Minasian, Stefan G; Olson, Angela C; Scott, Brian L; Shuh, David K; Tyliszczak, Tolek; Wilkerson, Marianne P; Zehnder, Ralph A

    2015-02-25

    Covalency in Ln-Cl bonds of Oh-LnCl6(x-) (x = 3 for Ln = Ce(III), Nd(III), Sm(III), Eu(III), Gd(III); x = 2 for Ln = Ce(IV)) anions has been investigated, primarily using Cl K-edge X-ray absorption spectroscopy (XAS) and time-dependent density functional theory (TDDFT); however, Ce L3,2-edge and M5,4-edge XAS were also used to characterize CeCl6(x-) (x = 2, 3). The M5,4-edge XAS spectra were modeled using configuration interaction calculations. The results were evaluated as a function of (1) the lanthanide (Ln) metal identity, which was varied across the series from Ce to Gd, and (2) the Ln oxidation state (when practical, i.e., formally Ce(III) and Ce(IV)). Pronounced mixing between the Cl 3p- and Ln 5d-orbitals (t2g* and eg*) was observed. Experimental results indicated that Ln 5d-orbital mixing decreased when moving across the lanthanide series. In contrast, oxidizing Ce(III) to Ce(IV) had little effect on Cl 3p and Ce 5d-orbital mixing. For LnCl6(3-) (formally Ln(III)), the 4f-orbitals participated only marginally in covalent bonding, which was consistent with historical descriptions. Surprisingly, there was a marked increase in Cl 3p- and Ce(IV) 4f-orbital mixing (t1u* + t2u*) in CeCl6(2-). This unexpected 4f- and 5d-orbital participation in covalent bonding is presented in the context of recent studies on both tetravalent transition metal and actinide hexahalides, MCl6(2-) (M = Ti, Zr, Hf, U).

  4. 16-8-2 weld metal design data for 316L(N) steel

    Energy Technology Data Exchange (ETDEWEB)

    Tavassoli, A.-A.F. [Commissariat a l' Energie Atomique, CEA/Saclay, 91191 Gif sur Yvette (France)], E-mail: tavassoli@cea.fr

    2008-12-15

    ITER materials properties documentation is extended to weld metals used for welding Type 316L(N) steel, i.e. the structural material retained for manufacturing ITER major components, such as the vacuum vessel. The data presented here are mainly for the Type 16-8-2 and complete those already reported for the low temperature (Type 316L) and the high temperature (Type 19-12-2) filler metals. The weld metal properties data for Type 16-8-2 filler metal and its joints are collected, sorted and analysed according to the French design and construction rules for nuclear components (RCC-MR). Particular attention is paid to the type of weld metal (e.g. wire for TIG, covered electrode for manual arc, flux wire for automatic welding), as well as, to the weld geometry and welding position. Design allowables are derived from validated data for each category of weld and compared with those of the base metal. In most cases, the analyses performed are extended beyond the conventional analyses required for codes to cover specific needs of ITER. These include effects of exposures to high temperature cycles during component fabrication, e.g. HIPing and low dose neutron irradiation at low and medium temperatures. The ITER Materials Properties Handbook (MPH) is, here, enriched with files for physical and mechanical properties of Type 16-8-2 weld metal. These files, combined with the codification and inspection files, are part of the documentation required for ITER licensing needs. They show that all three weld-metals satisfy the code requirements, provided compositions and types of welds used correspond to those specified in RCC-MR.

  5. Constants of hyperfine interaction of lanthanoid-phosphorus for [LnCl2Hmpa4]BPh4 composition compounds from data on 1H and 31P NMR

    International Nuclear Information System (INIS)

    Skopenko, V.V.; Amirkhanov, V.M.; Turov, A.V.; Trachevskij, V.V.

    1991-01-01

    By the method of 1 H and 31 P NMR at 233 and 298 K acetone solutions of lanthanide complexes of the composition [LnCl 2 Hmpa 4 ]BPh 4 (Hmpa=OP[N(CH 3 ) 2 ] 3 , Ln=La, Ce-Lu) have been considered. Two series of complexes having similar structure of coordination sphere (Ln=Pr-Ho and Ln=Er-Yb) are revealed and for each series the values of hyperfine interaction constants, which are 0.49 and 0.28 MHz respectively, have been determined

  6. Synthesis, structure, luminescent, and magnetic properties of carbonato-bridged Zn(II)2Ln(III)2 complexes [(μ4-CO3)2{Zn(II)L(n)Ln(III)(NO3)}2] (Ln(III) = Gd(III), Tb(III), Dy(III); L(1) = N,N'-bis(3-methoxy-2-oxybenzylidene)-1,3-propanediaminato, L(2) = N,N'-bis(3-ethoxy-2-oxybenzylidene)-1,3-propanediaminato).

    Science.gov (United States)

    Ehama, Kiyomi; Ohmichi, Yusuke; Sakamoto, Soichiro; Fujinami, Takeshi; Matsumoto, Naohide; Mochida, Naotaka; Ishida, Takayuki; Sunatsuki, Yukinari; Tsuchimoto, Masanobu; Re, Nazzareno

    2013-11-04

    of Zn(II)2Dy(III)2 were not detected. The fine structure assignable to the (5)D4 → (7)F6 transition of ZnTb1 and ZnTb2 is in good accord with the energy pattern from the magnetic analysis. The Zn(II)2Ln(III)2 complexes (Ln(III) = Tb(III), Dy(III)) showed an out-of-phase signal with frequency-dependence in alternating current susceptibility, indicative of single molecule magnet. Under a dc bias field of 1000 Oe, the signals become significantly more intense and the energy barrier, Δ/kB, for the magnetic relaxation was estimated from the Arrhenius plot to be 39(1) and 42(8) K for ZnTb1 and ZnTb2, and 52(2) and 67(2) K for ZnDy1 and ZnDy2, respectively.

  7. Series of edge-sharing bi-triangle Ln4 clusters with a μ4-NO3- bridge: syntheses, structures, luminescence, and the SMM behavior of the Dy4 analogue.

    Science.gov (United States)

    Zou, Hua-Hong; Wang, Rong; Chen, Zi-Lu; Liu, Dong-Cheng; Liang, Fu-Pei

    2014-02-14

    A series of Ln4 clusters, [Ln4L2(μ3-OH)2(μ4-NO3)(NO3)4(OCH3)(H2O)]·xMeCN·yMeOH (Ln = Gd (1), Tb (2), Dy (3), Ho (4), Er (5), Yb (6), L = 2-{[2-(2-hydroxy-ethoxy)-ethylimino]-methyl}-6-methoxyphenol), have been synthesized by the reaction of Ln(NO)3 and a Schiff-base ligand formed in situ. The six complexes display similar structures, with an overall metal core comprising two edge-sharing triangular Ln3 units linked by a μ4-NO3(-) bridge. The luminescence spectrum of complex 2 shows the characteristic emission of the Tb(III) ions. The magnetic susceptibility studies reveal that the Ln(III) ions are very weakly interacting in all six compounds. Frequency dependence of the ac-susceptibility was found for 3, suggesting a typical single-molecule magnet (SMM) behavior with an anisotropic barrier of 28 K.

  8. Red emitting phosphors of Eu{sup 3+} doped Na{sub 2}Ln{sub 2}Ti{sub 3}O{sub 10} (Ln = Gd, Y) for white light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Niumiao [National Key Laboratory of Photoelectric Technology and Functional Materials Culture Base in Shaanxi Province, National Photoelectric Technology and Functional Materials & Application of Science and Technology International Cooperation Base, Institute of Photonics & Photon-Technology, Northwest University, Xi’an 710069 (China); Guo, Chongfeng, E-mail: guocf@nwu.edu.cn [National Key Laboratory of Photoelectric Technology and Functional Materials Culture Base in Shaanxi Province, National Photoelectric Technology and Functional Materials & Application of Science and Technology International Cooperation Base, Institute of Photonics & Photon-Technology, Northwest University, Xi’an 710069 (China); Yin, Luqiao; Zhang, Jianhua [Key Laboratory of Advanced Display and System Applications (Shanghai University), Ministry of Education, Shanghai 200072 (China); Wu, Mingmei, E-mail: ceswmm@mail.sysu.edu.cn [School of Chemistry and Chemical Engineering, Sun Yat-Sen University, No. 135, Xingang Xi Road, Guangzhou 510275 (China)

    2015-06-25

    Highlights: • Layered red phosphors Na{sub 2}Ln{sub 2}Ti{sub 3}O{sub 10} (Ln = Gd, Y):Eu{sup 3+} were prepared. • The synthesis parameters of phosphors were optimized. • PL and thermal stability of the samples were investigated. • LED devices were also fabricated including the present red phosphor. - Abstract: A series of Eu{sup 3+} doped Na{sub 2}Ln{sub 2}Ti{sub 3}O{sub 10} (Ln = Gd, Y) red-emitting phosphors for application in ultraviolet based light emitting diodes (LEDs) were successfully synthesized by a modified sol–gel method. Their structure and luminescent properties were characterized by powder X-ray diffraction (XRD), photoluminescence excitation (PLE) and emission (PL) spectra and absorption spectra, according to these results the optimal compositions and synthesis parameters were determined. In addition, the thermal stabilities of the phosphors were investigated according to the temperature-dependent PL spectra. The red and white-LEDs (W-LEDs) comprising the Na{sub 2}Ln{sub 2}Ti{sub 3}O{sub 10}:Eu{sup 3+} (Ln = Gd, Y) red emitting phosphors were fabricated with a near-ultraviolet (n-UV) chip. In comparison with Na{sub 2}Y{sub 1.4}Eu{sub 0.6}Ti{sub 3}O{sub 10}, the Na{sub 2}Gd{sub 0.6}Eu{sub 1.4}Ti{sub 3}O{sub 10} phosphor offers higher brightness, quantum efficiency, and excellent thermal stability. W-LEDs comprising Na{sub 2}Gd{sub 0.6}Eu{sub 1.4}Ti{sub 3}O{sub 10} showed bright white emission with a color rendering index (Ra) of 82, a color temperature of 2151 K, and Commission Internationale de I’Eclairage (CIE) color coordinates of (0.34, 0.37). The phosphor Na{sub 2}Gd{sub 0.6}Eu{sub 1.4}Ti{sub 3}O{sub 10} is more suitable candidate for application in LEDs.

  9. Ternary phosphates in Ca3(PO4)2-Na3Ln(PO4)2 (Ln-Nd, Eu, Er) systems

    International Nuclear Information System (INIS)

    Lazoryak, B.I.; Ivanov, L.N.; Strunenkova, T.V.; Golubev, V.N.; Viting, B.N.

    1990-01-01

    Ternary phosphates, formed in Ca 3 (PO 4 ) 2 -Na 3 Ln(PO 4 ) 2 (Ln-Nd, Eu, Er) systems were investigated by the methods of X-ray phase, luminescent analyses and IR spectroscopy. 5 regions of homogeneity were found. Two of them (I and II) were distinguished for all systems. Samples in the region of up to 14.285 mol.% Na 3 Ln(PO 4 ) 2 crystallize on the basis of β-Ca 3 (PO 4 ) 2 structure, and in other homogeneity regions - on the basis of β-K 2 SO 4 structure

  10. High Specific Power Motors in LN2 and LH2

    Science.gov (United States)

    Brown, Gerald V.; Jansen, Ralph H.; Trudell, Jeffrey J.

    2007-01-01

    A switched reluctance motor has been operated in liquid nitrogen (LN2) with a power density as high as that reported for any motor or generator. The high performance stems from the low resistivity of Cu at LN2 temperature and from the geometry of the windings, the combination of which permits steady-state rms current density up to 7000 A/sq cm, about 10 times that possible in coils cooled by natural convection at room temperature. The Joule heating in the coils is conducted to the end turns for rejection to the LN2 bath. Minimal heat rejection occurs in the motor slots, preserving that region for conductor. In the end turns, the conductor layers are spaced to form a heat-exchanger-like structure that permits nucleate boiling over a large surface area. Although tests were performed in LN2 for convenience, this motor was designed as a prototype for use with liquid hydrogen (LH2) as the coolant. End-cooled coils would perform even better in LH2 because of further increases in copper electrical and thermal conductivities. Thermal analyses comparing LN2 and LH2 cooling are presented verifying that end-cooled coils in LH2 could be either much longer or could operate at higher current density without thermal runaway than in LN2.

  11. Structuring effects of [Ln6O(OH)8(NO3)6(H2O)12]2+ entities

    International Nuclear Information System (INIS)

    Guillou, O.; Daiguebonne, C.; Calvez, G.; Le Dret, F.; Car, P.-E.

    2008-01-01

    In order to obtain highly porous lanthanide-based coordination polymers we are currently investigating reactions between [Ln 6 O(OH) 8 (NO 3 ) 6 (H 2 O) 12 ] 2+ di-cationic hexanuclear entities and sodium salts of benzene-poly-carboxylic acids. Two new coordination polymers obtained during this study are reported here. In both cases, the hexanuclear entity has been destroyed during the reaction. However the resulting compounds are original thanks to a structuring effect of the poly-metallic complex. The first compound of chemical formula [Y 2 (C 8 H 4 O 4 ) 3 (DMF)(H 2 O)],2DMF crystallizes in the monoclinic system, space group P121/n (n o 14) with a = 16.0975(3) A, b = 14.4605(3) A, c = 17.7197(4) A, β = 92.8504(9) o and Z = 4. The second compound of chemical formula Y 2 (NO 3 ) 2 (C 10 H 2 O 8 )(DMF) 4 crystallizes in the triclinic system, space group P-1 (n o 2) with a = 7.5312(3) A, b = 9.0288(3) A, c = 13.1144(6) A, α = 92.6008(14) o , β = 94.9180(14) o , γ = 112.1824(16) o and Z = 2. Both crystal structures are 2D. Both crystal structures are described and the original structural features are highlighted and related to a potential structuring effect of the hexanuclear precursor

  12. An anti CuO{sub 2}-type metal hydride square net structure in Ln{sub 2}M{sub 2}As{sub 2}H{sub x} (Ln = La or Sm, M = Ti, V, Cr, or Mn)

    Energy Technology Data Exchange (ETDEWEB)

    Mizoguchi, Hiroshi; Park, SangWon; Hosono, Hideo [Tokyo Institute of Technology, Yokohama (Japan). Materials Research Center for Element Strategy; Hiraka, Haruhiro; Ikeda, Kazutaka; Otomo, Toshiya [High-Energy Accelerator Research Organization (KEK), Tsukuba (Japan). Inst. of Materials Structure Science

    2015-03-02

    Using a high pressure technique and the strong donating nature of H{sup -}, a new series of tetragonal La{sub 2}Fe{sub 2}Se{sub 2}O{sub 3}-type layered mixed-anion arsenides, Ln{sub 2}M{sub 2}As{sub 2}H{sub x}, was synthesized (Ln=La or Sm, M=Ti, V, Cr, or Mn; x∼3). In these compounds, an unusual M{sub 2}H square net, which has anti CuO{sub 2} square net structures accompanying two As{sup 3-} ions, is sandwiched by (LaH){sub 2} fluorite layers. Notably, strong metal-metal bonding with a distance of 2.80 Aa was confirmed in La{sub 2}Ti{sub 2}As{sub 2}H{sub 2.3}, which has metallic properties. In fact, these compounds are situated near the boundary between salt-like ionic hydrides and transition-metal hydrides with metallic characters.

  13. Development of electrolyte-supported intermediate-temperature single-chamber solid oxide fuel cells using Ln{sub 0.7}Sr{sub 0.3}Fe{sub 0.8}Co{sub 0.2}O{sub 3-{delta}} (Ln = Pr, La, Gd) cathodes

    Energy Technology Data Exchange (ETDEWEB)

    Ruiz de Larramendi, I.; Ruiz de Larramendi, J.I.; Rojo, T. [Departamento de Quimica Inorganica, Universidad del Pais Vasco, Apdo.644, 48080 Bilbao (Spain); Lamas, D.G.; Cabezas, M.D.; Walsoee de Reca, N.E. [CINSO, CONICET-CITEFA, J.B. de La Salle 4397 (B1603ALO) Villa Martelli, Pcia. de Buenos Aires (Argentina)

    2009-09-05

    Iron-cobalt-based perovskite oxides with general formula Ln{sub 0.7}Sr{sub 0.3}Fe{sub 0.8}Co{sub 0.2}O{sub 3-{delta}} (where Ln = La, Pr and Gd) have been investigated for their application as intermediate-temperature cathodes in solid oxide fuel cells (SOFCs). Powdered samples of these materials were synthesized by a novel gel combustion process and then characterized by X-ray powder diffraction (XPD) and scanning electron microscopy (SEM). XPD patterns were satisfactorily indexed with an orthorhombic GdFeO{sub 3}-type structure and, for all samples, a mean particle size of less than 1 {mu}m was estimated from the SEM data. Experimental single-chamber SOFCs using with these materials as cathodes and NiO-SDC (samaria-doped ceria) and SDC as anode and electrolyte, respectively, were evaluated at 600 C in a methane/oxygen mixtures. Peak power densities of 65.4, 48.7 and 46.2 mW cm{sup -2} were obtained for Ag vertical stroke Ln{sub 0.7}Sr{sub 0.3}Fe{sub 0.8}Co{sub 0.2}O{sub 3-{delta}} vertical stroke SDC vertical stroke NiO-SDC vertical stroke Pt cells with Ln = Pr, La and Gd, respectively. The relatively high power density obtained for the Pr compound shows that it could be an interesting material for cathode of single-chamber SOFCs. (author)

  14. Cation disorder in Ga1212.

    Science.gov (United States)

    Greenwood, K B; Ko, D; Vander Griend, D A; Sarjeant, G M; Milgram, J W; Garrity, E S; DeLoach, D I; Poeppelmeier, K R; Salvador, P A; Mason, T O

    2000-07-24

    Substitution of calcium for strontium in LnSr2-xCaxCu2GaO7 (Ln = La, Pr, Nd, Gd, Ho, Er, Tm, and Yb) materials at ambient pressure and 975 degrees C results in complete substitution of calcium for strontium in the lanthanum and praseodymium systems and partial substitution in the other lanthanide systems. The calcium saturation level depends on the size of the Ln cation, and in all cases, a decrease in the lattice parameters with calcium concentration was observed until a common, lower bound, average A-cation size is reached. Site occupancies from X-ray and neutron diffraction experiments for LnSr2-xCaxCu2GaO7 (x = 0 and x = 2) confirm that the A-cations distribute between the two blocking-layer sites and the active-layer site based on size. A quantitative link between cation distribution and relative site-specific cation enthalpy for calcium, strontium, and lanthanum within the gallate structure is derived. The cation distribution in other similar materials can potentially be modeled.

  15. The K2S2O8-KOH photoetching system for GaN

    NARCIS (Netherlands)

    Weyher, J.L.; Tichelaar, F.D.; van Dorp, D.H.; Kelly, J.J.; Khachapuridze, A.

    2010-01-01

    A recently developed photoetching system for n-type GaN, a KOH solution containing the strong oxidizing agent potassium peroxydisulphate (K2S2O8), was studied in detail. By careful selection of the etching parameters, such as the ratio of components and the hydrodynamics, two distinct modes were

  16. An anti CuO{sub 2}-type metal hydride square net structure in Ln{sub 2}M{sub 2}As{sub 2}H{sub x} (Ln = La or Sm, M = Ti, V, Cr, or Mn)

    Energy Technology Data Exchange (ETDEWEB)

    Mizoguchi, Hiroshi; Park, SangWon; Hosono, Hideo [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Hiraka, Haruhiro; Ikeda, Kazutaka; Otomo, Toshiya [Institute of Materials Structure Science, High-Energy Accelerator Research Organization (KEK), Tsukuba 305-0801 (Japan)

    2015-03-02

    Using a high pressure technique and the strong donating nature of H{sup -}, a new series of tetragonal La{sub 2}Fe{sub 2}Se{sub 2}O{sub 3}-type layered mixed-anion arsenides, Ln{sub 2}M{sub 2}As{sub 2}H{sub x}, was synthesized (Ln=La or Sm, M=Ti, V, Cr, or Mn; x∼3). In these compounds, an unusual M{sub 2}H square net, which has anti CuO{sub 2} square net structures accompanying two As{sup 3-} ions, is sandwiched by (LaH){sub 2} fluorite layers. Notably, strong metal-metal bonding with a distance of 2.80 Aa was confirmed in La{sub 2}Ti{sub 2}As{sub 2}H{sub 2.3}, which has metallic properties. In fact, these compounds are situated near the boundary between salt-like ionic hydrides and transition-metal hydrides with metallic characters. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Structural, magnetic and electronic properties of rare earth ternary oxides Li Ln(II) 2 Ln(III)O4

    International Nuclear Information System (INIS)

    Malki, M.

    1987-06-01

    Properties of a new class of rare earth ternary oxides Li Ln(II) 2 Ln(III)O 4 where Ln(II) is a divalent metal (Sr, Eu) and Ln(III) a trivalent rare earth (Eu, Gd, Dy, Er and Y). These orthorhombic compounds (type Li Eu 3 O 4 ) allow the study of many magnetic phenomena and their evolution in function of the nature of Ln(II) and Ln(III): diamagnetic ions Sr 2+ , Y 3+ ; isotrope magnetic ions: Eu 2+ , Gd 3+ and anisotrope magnetic ions Dy 3+ , Er 3+ . Magnetic and electric properties are obtained by classical techniques and from hyperfine interaction by Moessbauer spectroscopy. The possibility to use several Moessbauer resonance (nuclei Eu 151, Gd 155, Dy 161 and Er 166) completes informations obtained by the macroscopic study [fr

  18. Thermal decomposition of heavy rare-earth butanoates, Ln(C3H7CO2)3 (Ln = Er, Tm, Yb and Lu) in argon

    DEFF Research Database (Denmark)

    Grivel, Jean-Claude; Yue, Zhao; Tang, Xiao

    2016-01-01

    was observed in all four compounds, but its course depends on the rare-earth element. Decomposition to sesquioxides proceeds via the formation of dioxymonocarbonates (Ln2O2CO3) and release of 4-heptanone (C3H7COC3H7) as well as carbon dioxide (CO2) without evidence for an intermediate oxobutanoate stage...... of Ln2O2CO3 and Ln2O3. The stability of this intermediate state seems to decrease with the mass of the rare-earth elements. Complete conversion to Ln2O3 is reached at about 1100 °C. The overall thermal decomposition behaviour of the title compounds is different from previous reports for other rare....... During the decomposition of Ln2O2CO3 into the respective sesquioxides (Ln2O3), an intermediate plateau extending from approximately 550 to 850 °C appears in the TG traces. The overall composition during this stage corresponds approximately to Ln2O2.8(CO3)0.2, but the state is more probably a mixture...

  19. Optical and crystal chemistry studies of Na3Ln(PO4)2-K3Ln(PO4)2 (Ln=Eu, Gd)

    International Nuclear Information System (INIS)

    Mesnaoui, M.; Maazaz, M.

    1987-01-01

    In these systems, large single phase domains are separated by two phase regions. The structural evolution as a function of composition is analysed both by X-ray diffraction and by using Eu 3+ and Gd 3+ as luminescent local structural probes. Due to layer type structure of the K 3 Ln(PO 4 ) 2 phases an exchange reaction resulting in total substitution of sodium for potassium can be carried out with formation of metastable Na 3 Ln(PO 4 ) 2 phases, the structure of which is close to those of the potassium compounds. 10 refs.; 18 figs [fr

  20. Synthesis, Structure, and Magnetism of Tris(amide) {Ln[N(SiMe3)2]3}1- Complexes of the Non-Traditional +2 Lanthanide Ions.

    Science.gov (United States)

    Ryan, Austin Jack; Darago, Lucy E; Balasubramini, Sree Ganesh; Chen, Guo P; Ziller, Joseph W; Furche, Filipp; Long, Jeffrey R; Evans, William J

    2018-02-28

    A new series of Ln2+ complexes has been synthesized that overturns two previous generalizations in rare-earth metal reduction chemistry: that amide ligands do not form isolable complexes of the highly-reducing non-traditional Ln2+ ions and that yttrium is a good model for the late lanthanides in these reductive reactions. Reduction of Ln(NR2)3 (R = SiMe3) complexes in THF under Ar with M = K or Rb in the presence of 2.2.2-cryptand (crypt) forms crystallographically-characterizable [M(crypt)][Ln(NR2)3] complexes not only for the traditional Tm2+ ion and the configurational crossover ions, Nd2+ and Dy2+, but also for the non-traditional Gd2+, Tb2+, Ho2+, and Er2+ ions. Crystallographic data as well as UV-visible, magnetic susceptibility, and density functional theory studies are consistent with the accessibility of 4fn5d1 configurations for Ln2+ ions in this tris(silylamide) ligand environment. The Dy2+ complex, [K(crypt)][Dy(NR2)3], has a higher magnetic moment than previously observed for any monometallic complex: 11.67 µB. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Syntheses, structures and properties of three new two-dimensional Cu(I)-Ln(III) heterometallic coordination polymers based on 2,2'-dipyridyl-5,5'-dicarboxylate ligands.

    Science.gov (United States)

    Zhao, Junwei; Cheng, Yamin; Shang, Sensen; Zhang, Fang; Chen, Li; Chen, Lijuan

    2013-12-01

    Three new two-dimensional Cu(I)-Ln(III) heterometallic coordination polymers [Ln(III)Cu2(I)(Hbpdc)4] · Cl · xH2O [Ln(III) = La(III), x = 8 (1); Ln(III) = Pr(III), x=9 (2); Ln(III) = Eu(III), x = 8 (3)] (H2bpdc = 2,2'-bipyridyl-5,5'-dicarboxylic acid) have been prepared under hydrothermal conditions and structurally characterized by elemental analyses, inductively coupled plasma atomic emission spectrometry (ICP-AES) analyses, IR spectra, X-ray photoelectron spectroscopy (XPS) and single-crystal X-ray diffraction. X-ray diffraction indicates that the isomorphic 1-3 display the two-dimensional sheet structure constructed from [Cu(I)(Hbpdc)2](-) fragments through Ln(3+) connectors. Moreover, the solid-state photoluminescence measurements of 3 indicate that the Eu(III) ions, Hbpdc(-) ligands and Cu(I) cations make contributions to its luminescent properties simultaneously. Copyright © 2013 Elsevier B.V. All rights reserved.

  2. Catalytic Oligomerization of Terminal Alkynes by Lanthanide Carbyls (η5-C5Me5)2LnCH(SiMe3)2 (Ln = Y, La, Ce)

    NARCIS (Netherlands)

    Heeres, H.J.; Teuben, J.H.

    1991-01-01

    Lanthanide and group 3 carbyls Cp*2LnCH(SiMe3)2 (1, Ln = Y; 2, Ln = La; 3, Ln = Ce) are active catalyst precursors for the oligomerization of terminal alkynes HC≡CR (R = alkyl, aryl, SiMe3). The regioselectivity and the extent of oligomerization depend strongly on the lanthanide applied as well as

  3. The K 2S 2O 8-KOH photoetching system for GaN

    Science.gov (United States)

    Weyher, J. L.; Tichelaar, F. D.; van Dorp, D. H.; Kelly, J. J.; Khachapuridze, A.

    2010-09-01

    A recently developed photoetching system for n-type GaN, a KOH solution containing the strong oxidizing agent potassium peroxydisulphate (K 2S 2O 8), was studied in detail. By careful selection of the etching parameters, such as the ratio of components and the hydrodynamics, two distinct modes were defined: defect-selective etching (denoted by KSO-D) and polishing (KSO-P). Both photoetching methods can be used under open-circuit (electroless) conditions. Well-defined dislocation-related etch whiskers are formed during KSO-D etching. All types of dislocations are revealed, and this was confirmed by cross-sectional TEM examination of the etched samples. Extended electrically active defects are also clearly revealed. The known relationship between etch rate and carrier concentration for photoetching of GaN in KOH solutions was confirmed for KSO-D etch using Raman measurements. It is shown that during KSO-P etching diffusion is the rate-limiting step, i.e. this etch is suitable for polishing of GaN. Some constraints of the KSO etching system for GaN are discussed and peculiar etch features, so far not understood, are described.

  4. The nonlinear optical properties of a magneto-exciton in a strained Ga0.2In0.8As/GaAs quantum dot

    International Nuclear Information System (INIS)

    Kumar, N. R. Senthil; Peter, A. John; Yoo Chang Kyoo

    2013-01-01

    The magnetic field-dependent heavy hole excitonic states in a strained Ga 0.2 In 0.8 As/GaAs quantum dot are investigated by taking into account the anisotropy, non-parabolicity of the conduction band, and the geometrical confinement. The strained quantum dot is considered as a parabolic dot of InAs embedded in a GaAs barrier material. The dependence of the effective excitonic g-factor as a function of dot radius and the magnetic field strength is numerically measured. The interband optical transition energy as a function of geometrical confinement is computed in the presence of a magnetic field. The magnetic field-dependent oscillator strength of interband transition under the geometrical confinement is studied. The exchange enhancements as a function of dot radius are observed for various magnetic field strengths in a strained Ga 0.2 In 0.8 As/GaAs quantum dot. Heavy hole excitonic absorption spectra, the changes in refractive index, and the third-order susceptibility of third-order harmonic generation are investigated in the Ga 0.2 In 0.8 As/GaAs quantum dot. The result shows that the effect of magnetic field strength is more strongly dependent on the nonlinear optical property in a low-dimensional semiconductor system. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  5. Uranyl and/or rare-earth mellitates in extended organic-inorganic networks: A unique case of hetero-metallic cation-cation interaction with U-VI=O-Ln(III) bonding (Ln = Ce, Nd)

    International Nuclear Information System (INIS)

    Volkringer, Christophe; Henry, Natacha; Grandjean, Stephane; Loiseau, Thierry

    2012-01-01

    A series of uranyl and lanthanide (trivalent Ce, Nd) mellitates (mel) has been hydrothermally synthesized in aqueous solvent. Mixtures of these 4f and 5f elements also revealed the formation of a rare case of lanthanide-uranyl coordination polymers. Their structures, determined by XRD single-crystal analysis, exhibit three distinct architectures. The pure lanthanide mellitate Ln 2 (H 2 O) 6 (mel) possesses a 3D framework built up from the connection of isolated LnO 6 (H 2 O) 3 polyhedra (tri-capped trigonal prism) through the mellitate ligand. The structure of the uranyl mellitate (UO 2 ) 3 (H 2 O) 6 - (mel).11.5H 2 O is lamellar and consists of 8-fold coordinated uranium atoms linked to each other through the organic ligand giving rise to the formation of a 2D 3 6 net. The third structural type, (UO 2 ) 2 Ln(OH)(H 2 O) 3 (mel).2.5H 2 O, involves direct oxygen bondings between the lanthanide and uranyl centers, with the isolation of a hetero-metallic dinuclear motif. The 9-fold coordinated Ln cation, LnO 5 (OH)(H 2 O) 3 , is linked to the 7-fold coordinated uranyl (UO 2 )O-4(OH) (pentagonal bipyramid) via one μ 2 -hydroxo group and one μ 2 -oxo group. The latter is shared between the uranyl bonding (U=O = 1.777(4)1.779(6) angstrom) and a long Ln-O bonding (Ce-O = 2.822(4) angstrom; Nd-O = 2.792(6) angstrom). This unusual linkage is a unique illustration of the so-called cation cation interaction associating 4f and 5f metals. The dinuclear motif is then further connected through the mellitate ligand, and this generates organic inorganic layers that are linked to each other via discrete uranyl (UO 2 )O 4 units (square bipyramid), which ensure the three-dimensional cohesion of the structure. The mixed U-Ln carboxylate is thermally decomposed from 260 to 280 degrees C and then transformed into the basic uranium oxide (U 3 O 8 ) together with U-Ln oxide with the fluorite structural type ('(Ln,U)O 2 '). At 1400 degrees C, only fluorite type '(Ln,U)O 2 ' is formed with

  6. New lanthanide hydrogen phosphites LnH (P03H)2 2H20

    International Nuclear Information System (INIS)

    Durand, J.; Tijani, N.; Cot, L.; Loukili, M.; Rafiq, M.

    1988-01-01

    LnH ((P0 3 H) 2 2H 2 0 is prepared from lanthanide oxide and phosphorous acid with Ln = La, Y, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er or Tm. By thermal gravimetric analysis LnH (P0 3 H) 2 and LnH 2 P 2 0 5 (P0 3 H) 2 are obtained. The three salts are orthorhombic. Parameters and space groups are given for the three salts of each lanthanide. 4 tabs., 13 refs

  7. Investigation of BaMoO4-Ln2(MoO4)3 systems (Ln = Nd, Sm, Yb)

    International Nuclear Information System (INIS)

    Vakulyuk, V.V.; Evdokimov, A.A.; Khomchenko, G.P.

    1982-01-01

    Using the methods of X-ray phase and differential-thermal analyses phase ratios in the systems BaMoO 4 -Ln 2 (MoO 4 ) 3 (Ln=Nd, Sm, Yb); BaNd 2 (MoO 4 ) 4 -MaGd 2 (MoO 4 ) are studied. Unit cell parameters and the character of melting of the compounds BaLn 2 (MoO 4 ) 4 are specified. Effect of growth conditions on laminated nature of BaGd 2 (MoO 4 ) 4 monocrystals is studied

  8. K2Ln2As2Se9 (Ln = Sm, Gd): the first quaternary rare-earth selenoarsenate compounds with a 3D framework containing chairlike As2Se4 units.

    Science.gov (United States)

    Wu, Yuandong; Bensch, Wolfgang

    2009-04-06

    The new compounds K(2)Ln(2)As(2)Se(9) (Ln = Sm, Gd) were obtained by applying the reactive flux method. The structure consists of a three-dimensional (3D) [Ln(2)As(2)Se(9)](2-) framework with K(+) ion-filling tunnels running along the b axis. The two unique Ln(3+) cations are coordinated by two Se(2)(2-) dumbbells, two AsSe(3)(3-) pyramids, and one chairlike As(2)Se(4)(2-) unit in a bicapped trigonal-prismatic geometry. The Ln(3+)-centered trigonal prisms share triangular faces with neighboring prisms, forming one-dimensional chains along the b axis. These chains are linked to each other to form layers by sharing Se(2-) anions on the capped sites of the trigonal prisms. The As(2)Se(4) units connect these layers to form the 3D framework.

  9. Lanthanide stannate pyrochlores (Ln2Sn2O7; Ln = Nd, Gd, Er) at high pressure.

    Science.gov (United States)

    Turner, Katlyn M; Tracy, Cameron L; Mao, Wendy L; Ewing, Rodney C

    2017-11-09

    Lanthanide stannate pyrochlores (Ln2Sn2O7; Ln=Nd, Gd, and Er) were investigated in situ to 50 GPa in order to determine their structural response to compression and compare it to that of lanthanide titanate, zirconate, and hafnate pyrochlores. The cation radius ratio of A3+/B4+ in pyrochlore oxides (A2B2O7) is thought to be the dominant property that influences their compression response. The ionic radius of Sn4+ is intermediate to that of Ti4+, Zr4+, and Hf4+, but the bond in stannate pyrochlore is more covalent than the bonds in titanates, zirconate, and hafnates. In stannates, the pyrochlore cation and anion sublattices begin to disorder at 0.3 GPa. The extent of sublattice disorder vs. pressure is greater in stannates with a smaller Ln3+ cation. Stannate pyrochlores (Fd-3m) begin a sluggish transformation to a cotunnite-like structure (Pnma) at ~28 GPa; similar transitions have been observed in titanate, zirconate, and hafnate pyrochlore at varying pressures with cation radius ratio. The extent of the phase transition vs. pressure varies directly with the size of the Ln3+ cation. Post-decompression from ~50 GPa, Er2Sn2O7 and Gd2Sn2O7 adopt a pyrochlore structure, rather than the multiscale defect-fluorite + weberite structure adopted by Nd2Sn2O7 that is characteristic of titanate, zirconate, and hafnate pyrochlore treated to similar conditions. Like pyrochlore titanates, zirconates, and hafnates, the bulk modulus, B0, of stannates varies linearly and inversely with cation radius ratio. The trends of bulk moduli in stannates in this study are in excellent agreement with previous experimental studies on stannates, and suggest that the size of the Ln3+ cation is a primary determining factor of B0. Additionally, when normalized to rA/rB, the bulk moduli of stannates are comparable to those of zirconates and hafnates, which vary from titanates. Our results suggest that the cation radius ratio strongly influences the bulk moduli of stannates as well as

  10. Superconducting properties of Zr1+xNi2-xGa and Zr1-xNi2+xGa Heusler compounds

    Directory of Open Access Journals (Sweden)

    Saad Alzahrani

    2017-05-01

    Full Text Available The superconducting properties of a series of Zr1+xNi2-xGa and Zr1-xNi2+xGa compounds have been investigated by x-ray diffraction, electrical resistivity, dc magnetization, and ac susceptibility measurements. While the parent compound, ZrNi2Ga, exhibited the cubic L21 Heusler structure, multiple non-cubic structures formed in the Zr and Ni rich doped materials. For x ≤ 0.3, all Zr1-xNi2+xGa compounds demonstrated superconducting behavior, but no superconductivity was observed in the Zr1+xNi2-xGa alloys for x > 0.2. The magnetization data revealed that all materials in both Zr1+xNi2-xGa and Zr1-xNi2+xGa series exhibited type-II superconductivity. With increasing doping concentration x, the paramagnetic ordering were enhanced in both systems while the superconducting properties were found to weaken. The observations are discussed considering the structural disorders in the systems.

  11. Synthesis and characterisation of the n = 2 Ruddlesden–Popper phases Ln{sub 2}Sr(Ba)Fe{sub 2}O{sub 7} (Ln = La, Nd, Eu)

    Energy Technology Data Exchange (ETDEWEB)

    Gurusinghe, Nicola N.M. [School of Chemistry, The University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom); Figuera, Juand de la; Marco, José F. [Instituto de Quimica-Fisica “Rocasolano”, CSIC, Serrano 119, 28006 Madrid (Spain); Thomas, Michael F. [Department of Physics, University of Liverpool, Liverpool. L69 3BX (United Kingdom); Berry, Frank J., E-mail: f.j.berry.1@bham.ac.uk [School of Chemistry, The University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom); Greaves, Colin [School of Chemistry, The University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom)

    2013-09-01

    Graphical abstract: - Highlights: • Some Ruddlesden–Popper phases have been characterised. • Substitution on the A site influences cationic order. • The magnetic moment redirects with temperature - Abstract: A series of n = 2 Ruddlesden–Popper phases A{sub 2}B{sub 2}O{sub 7} of composition Ln{sub 2}Sr(Ba)Fe{sub 2}O{sub 7} (Ln = La, Nd, Eu) have been prepared. La{sub 2}SrFe{sub 2}O{sub 7} and La{sub 2}BaFe{sub 2}O{sub 7} crystallise in the tetragonal space group I4/mmm. The structures of Eu{sub 2}SrFe{sub 2}O{sub 7} and Nd{sub 2}SrFe{sub 2}O{sub 7} are best described in space group P4{sub 2}/mnm. Substitution on the A site with smaller lanthanide- and larger alkaline metal- ions leads to enhanced cationic order in these phases and reflects increasing differences in cationic radii. All the compounds are antiferromagnetically ordered between 298 and 2 K. In La{sub 2}SrFe{sub 2}O{sub 7} the magnetic moment lies along [1 1 0] at all temperatures between 298 and 2 K whereas in La{sub 2}BaFe{sub 2}O{sub 7} the magnetic moment at 298 K lies along the crystallographic x-axis but redirects from the [1 0 0] to the [1 1 0] direction between 210 and 190 K and is retained in this direction until 2 K. In Nd{sub 2}SrFe{sub 2}O{sub 7} the magnetic moment at 298 K lies along [1 1 0] but rotates from [1 1 0] to [0 0 1] between 17 and 9 K. A series of {sup 57}Fe Mössbauer spectra recorded from La{sub 2}SrFe{sub 2}O{sub 7} between 290 and 600 K indicate a magnetic ordering temperature of T{sub N} ≥ 535 K.

  12. Bi3+ sensitized Y2WO6:Ln3+ (Ln=Dy, Eu, and Sm) phosphors for solar spectral conversion.

    Science.gov (United States)

    Huang, M N; Ma, Y Y; Xiao, F; Zhang, Q Y

    2014-01-01

    The phosphors of Y2WO6:Bi3+, Ln3+ (Ln=Dy, Eu and Sm) were synthesized by solid-state reaction in this study. The crystal structure, photoluminescence properties and energy transfer mechanism were investigated. By introducing Bi3+ ions, the excitation band of the phosphors was broadened to be 250-380 nm, which could be absorbed by the dye-sensitized solar cells (DSSCs). The overlap between excitation of W-O groups/Bi3+ and the emission of Ln3+ (Dy, Eu, and Sm) indicated that the probability of energy transfer from W-O groups and Bi3+ to Ln3+. The energy transfer efficiency from Bi3+ to Ln3+ (Ln=Dy, Eu and Sm) are calculated to be 16%, 20% and 58%. This work suggested that Y2WO6:Bi3+, Ln3+ (Ln=Dy, Eu and Sm) might be a promising ultraviolet-absorbing luminescent converter to enhance the photoelectrical conversion efficiency of dye-sensitized solar cells (DSSCs). Copyright © 2013 Elsevier B.V. All rights reserved.

  13. XPS study of the Ln 5p,4f-electronic states of lanthanides in Ln2O3

    International Nuclear Information System (INIS)

    Teterin, Yu.A.; Teterin, A.Yu.; Utkin, I.O.; Ryzhkov, M.V.

    2004-01-01

    The present work analyses the fine structure of the low binding energy (E b , 0-50 eV) X-ray photoelectron spectra XPS of lanthanide (La through Lu excepted for Pm) oxides, and compares it with the non-relativistic X α -discrete variation calculation results for the clusters reflecting the close environment of lanthanides in oxides. The obtained results show that the Ln 4f n -electrons of lanthanides in oxides by their spectral parameters have much in common with the M 3d-electrons in oxides of the 3d-transition metals. According to these data, the Ln 4f shell of lanthanides is rather outer and can participate in the formation of molecular orbitals in compounds. The XPS data at least do not contradict the theoretical suggestion about the significant participation of the Ln 4f-electrons in formation of the molecular orbitals in the studied materials. The spectra in the Ln 5p-O 2s binding energy region of the studied lanthanide oxides were found to exhibit the complicated structure instead of separated peaks due to the electrons of the Ln 5p 3/2,5/2 and O 2s atomic shells. Taking into account the energy differences between the inner (Ln 3d) and outer (Ln 5p) electronic shells for some metallic lanthanides and their oxides, the Ln 5p atomic shells were shown to participate in the formation of the inner valence molecular orbitals (IVMO). That agrees qualitatively with the calculation results

  14. Superspace description of the homologous series Ga2O3(ZnO)m.

    Science.gov (United States)

    Michiue, Yuichi; Kimizuka, Noboru

    2010-04-01

    A unified description for the structures of the homologous series Ga(2)O(3)(ZnO)(m), gallium zinc oxide, is presented using the superspace formalism. The structures were treated as a compositely modulated structure consisting of two subsystems. One is constructed with metal ions and the other with O ions. The ideal model is given, in which the displacive modulations of ions are well described by the zigzag function with large amplitudes. Alternative settings are also proposed which are analogous to the so-called modular structures. The validity of the model has been confirmed by refinements for phases with m = 6 and m = 9 in the homologous series. A few complex phenomena in real structures are taken into account by modifying the ideal model.

  15. Eu{sub 7}Ga{sub 6}Sb{sub 8}: A Zintl phase with Ga-Ga bonds and polymeric gallium antimonide chains

    Energy Technology Data Exchange (ETDEWEB)

    Park, S -M; Kim, S -J; Kanatzidis, M G

    2004-08-01

    The Zintl phase Eu{sub 7}Ga{sub 6}Sb{sub 8} was obtained from a direct element combination reaction at 900 deg. C. It crystallizes in the orthorhombic space group Pbca (No. 61) with a=15.6470(17) A, b=17.2876(19) A, c=17.9200(19) A, and Z=8. In Eu{sub 7}Ga{sub 6}Sb{sub 8}, the anionic framework forms infinite chains of [Ga{sub 6}Sb{sub 8}]{sup 14-} which are arranged side by side to make a sheet-like arrangement but without linking. The sheets of chains are separated by Eu{sup 2+} atoms and also within the sheet, Eu{sup 2+} atoms fill the spaces between two chains. The chain is made up of homoatomic tetramers (Ga{sub 4}){sup 6+} and dimers (Ga{sub 2}){sup 4+} connected by Sb atoms. The compound is a narrow band-gap semiconductor with E{sub g}{approx}0.6 eV and satisfies the classical Zintl concept. Extended Hueckel band structure calculations confirm that the material is a semiconductor and suggest that the structure is stabilized by strong Ga-Ga covalent bonding interactions. Magnetic susceptibility measurements for Eu{sub 7}Ga{sub 6}Sb{sub 8} show that the Eu atoms are divalent and the compound has an antiferromagnetic transition at 9 K.

  16. Decanuclear Ln10 Wheels and Vertex-Shared Spirocyclic Ln5 Cores: Synthesis, Structure, SMM Behavior, and MCE Properties.

    Science.gov (United States)

    Das, Sourav; Dey, Atanu; Kundu, Subrata; Biswas, Sourav; Narayanan, Ramakirushnan Suriya; Titos-Padilla, Silvia; Lorusso, Giulia; Evangelisti, Marco; Colacio, Enrique; Chandrasekhar, Vadapalli

    2015-11-16

    The reaction of a Schiff base ligand (LH3) with lanthanide salts, pivalic acid and triethylamine in 1:1:1:3 and 4:5:8:20 stoichiometric ratios results in the formation of decanuclear Ln10 (Ln = Dy (1), Tb (2), and Gd (3)) and pentanuclear Ln5 complexes (Ln = Gd (4), Tb (5), and Dy (6)), respectively. The formation of Ln10 and Ln5 complexes are fully governed by the stoichiometry of the reagents used. Detailed magnetic studies on these complexes (1-6) have been carried out. Complex 1 shows a SMM behavior with an effective energy barrier for the reversal of the magnetization (Ueff) = 16.12(8) K and relaxation time (τo) = 3.3×10(-5) s under 4000 Oe direct current (dc) field. Complex 6 shows the frequency dependent maxima in the out-of-phase signal under zero dc field, without achieving maxima above 2 K. Complexes 3 and 4 show a large magnetocaloric effect with the following characteristic values: -ΔSm = 26.6 J kg(-1) K(-1) at T = 2.2 K for 3 and -ΔSm = 27.1 J kg(-1) K(-1) at T = 2.4 K for 4, both for an applied field change of 7 T. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Crystal structure, intensity luminescence characteristics and stimulated radiation of disordered gallate LaSr2Ga11O20-Nd3+

    International Nuclear Information System (INIS)

    Kaminskij, A.A.; Mill', B.V.; Belokoneva, E.L.; Butashin, A.V.; Sarkisov, S.Eh.; Kurbanov, K.; Khodzhabagyan, G.G.

    1986-01-01

    LnA 2 2+ Ga 11 O 20 and A 3 2+ M 0.5 5+ Ga 10.5 O 20 compounds are synthesized, LaSr 2 Ga 11 O 20 and LaSr 2 Ga 11 O 20 -Nd 3+ monocrystals are grown by Czochralski method. Their X-ray diffraction analysis is conducted, absorption - luminescence characteristics are obtained, stimulated Nd 3+ ion radiation is excited and investigated in two generating channel waves 4 F 3/2 → 4 I 11/2,13/2 at 300 K

  18. Interplay of structural chemistry and magnetism in perovskites; A study of CaLn2Ni2WO9; Ln=La, Pr, Nd

    Science.gov (United States)

    Chin, Chun-Mann; Paria Sena, Robert; Hunter, Emily C.; Hadermann, Joke; Battle, Peter D.

    2017-07-01

    Polycrystalline samples of CaLn2Ni2WO9 (Ln=La, Pr, Nd) have been synthesized and characterised by a combination of X-ray and neutron diffraction, electron microscopy and magnetometry. Each composition adopts a perovskite-like structure with a 5.50, b 5.56, c 7.78 Å, β 90.1° in space group P21/n. Of the two crystallographically distinct six-coordinate sites, one is occupied entirely (Ln=Pr) or predominantly (Ln=La, Nd) by Ni2+ and the other by Ni2+ and W6+ in a ratio of approximately 1:2. None of the compounds shows long-range magnetic order at 5 K. The magnetometry data show that the magnetic moments of the Ni2+ cations form a spin glass below 30 K in each case. The Pr3+ moments in CaPr2Ni2WO9 also freeze but the Nd3+ moments in CaNd2Ni2WO9 do not. This behaviour is contrasted with that observed in other (A,A')B2B'O9 perovskites.

  19. Intrapartální fetální monitoring, senzitivita a specificita metod

    Czech Academy of Sciences Publication Activity Database

    Hájek, Z.; Srp, B.; Pavlíková, Markéta; Zvárová, Jana; Liška, K.; Haddad El, R.; Pašková, A.; Pařízek, A.

    2006-01-01

    Roč. 71, č. 4 (2006), s. 263-267 ISSN 1210-7832 Grant - others:GA MZd(CZ) NH7664 Institutional research plan: CEZ:AV0Z10300504 Keywords : senzitivita * specificita * diagnostika hypoxie * kardiotokografie * fetální pulzní oxymetrie * ST analýza EKG plodu Subject RIV: BB - Applied Statistics, Operational Research

  20. Formation of high oxide ion conductive phases in the sintered oxides of the system Bi2O3-Ln2O3 (Ln = La-Yb)

    International Nuclear Information System (INIS)

    Iwahara, H.; Esaka, T.; Sato, T.; Takahashi, T.

    1981-01-01

    The electrical conduction in various phases of the system Bi 2 O 3 -Ln 2 O 3 (Ln = La, Nd, Sm, Dy, Er, or Yb) was investigated by measuring ac conductivity and the emf of the oxygen gas concentration cell. High-oxide-ion conduction was observed in the rhombohedral and face-centered cubic (fcc) phase in these systems. The fcc phase could be stabilized over a wide range of temperature by adding a certain amount of Ln 2 O 3 . In these cases, the larger the atomic number of Ln, the lower the content of Ln 2 O 3 required to form the fcc solid solution, except in the case of Yb 2 O 3 . The oxide ion conductivity of this phase decreased with increasing content of Ln 2 O 3 . Maximum conductivity was obtained at the lower limit of the fcc solid solution formation range in each system, which was more than one order of magnitude higher than those of conventional stabilized zirconias. Lattice parameters of the fcc phase were calculated from the x-ray diffraction patterns. The relationship between the oxide ion conductivity and the lattice parameter was also discussed

  1. Structure and bulk modulus of Ln-doped UO{sub 2} (Ln = La, Nd) at high pressure

    Energy Technology Data Exchange (ETDEWEB)

    Rittman, Dylan R., E-mail: drittman@stanford.edu [Department of Geological Sciences, Stanford University, Stanford, CA 94305 (United States); Park, Sulgiye; Tracy, Cameron L. [Department of Geological Sciences, Stanford University, Stanford, CA 94305 (United States); Zhang, Lei [Peter A. Rock Thermochemistry Laboratory and NEAT ORU, University of California Davis, Davis, CA 95616 (United States); Department of Chemical Engineering and Materials Science, University of California Davis, Davis, CA 95616 (United States); Palomares, Raul I.; Lang, Maik [Department of Nuclear Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Navrotsky, Alexandra [Peter A. Rock Thermochemistry Laboratory and NEAT ORU, University of California Davis, Davis, CA 95616 (United States); Department of Chemical Engineering and Materials Science, University of California Davis, Davis, CA 95616 (United States); Mao, Wendy L. [Department of Geological Sciences, Stanford University, Stanford, CA 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States); Ewing, Rodney C. [Department of Geological Sciences, Stanford University, Stanford, CA 94305 (United States)

    2017-07-15

    The structure of lanthanide-doped uranium dioxide, Ln{sub x}U{sub 1-x}O{sub 2-0.5x+y} (Ln = La, Nd), was investigated at pressures up to ∼50–55 GPa. Samples were synthesized with different lanthanides at different concentrations (x ∼ 0.2 and 0.5), and all were slightly hyperstoichiometric (y ∼ 0.25–0.4). In situ high-pressure synchrotron X-ray diffraction was used to investigate their high-pressure phase behavior and determine their bulk moduli. All samples underwent a fluorite-to-cotunnite phase transformation with increasing pressure. The pressure of the phase transformation increased with increasing hyperstoichiometry, which is consistent with results from previous computational simulations. Bulk moduli are inversely proportional to both the ionic radius of the lanthanide and its concentration, as quantified using a weighted cationic radius ratio. This trend was found to be consistent with the behavior of other elastic properties measured for Ln-doped UO{sub 2}, such as Young's modulus. - Highlights: •Ln-doped UO{sub 2} transforms from fluorite to cotunnite at high pressure. •Transition pressure increases with increasing hyperstoichiometry. •Bulk modulus decreases with increasing Ln-dopant radius and concentration.

  2. A determination of the oxygen non-stoichiometry of the oxygen storage materials LnBaMn2O5+δ (Ln=Gd, Pr)

    Science.gov (United States)

    Jeamjumnunja, Kannika; Gong, Wenquan; Makarenko, Tatyana; Jacobson, Allan J.

    2016-07-01

    The A-site ordered double-perovskite oxides, LnBaMn2O5+δ (Ln=Gd, Pr), were synthesized and investigated to understand the effect of A site cation substitution on the oxygen storage properties of these materials. The present results are compared with our previous data for YBaMn2O5+δ. The results clearly reveal that changing the Ln cation strongly influences the oxidation/reduction behavior of LnBaMn2O5+δ. Based on thermogravimetric analysis data, oxygen uptake begins at lower temperatures in both air and oxygen in compounds with Ln3+ ions larger than Y3+. These oxides exhibit almost complete and reversible oxygen uptake/release between fully-reduced LnBaMn2O5 and fully-oxidized LnBaMn2O6 during changes of the oxygen partial pressure between air and 1.99% H2/Ar. In addition, the oxygen non-stoichiometries of GdBaMn2O5+δ and PrBaMn2O5+δ were determined as a function of pO2 at 600, 650, 700 and 750 °C by Coulometric titration at near-equilibrium conditions. The results confirm that these materials have two distinct phases on oxidation/reduction with δ≈0, 0.5 and a third phase with a range of composition with an oxygen content (5+δ) approaching 6. The stabilities of the LnBaMn2O5+δ phases extend over a wide range of oxygen partial pressures (∼10-25≤pO2 (atm)≤∼1) depending on temperature. Isothermal experiments show that the larger the Ln3+ cation the lower pO2 for phase conversion. At some temperatures and pO2 conditions, the LnBaMn2O5+δ compounds are unstable with respect to decomposition to BaMnO3-δ and LnMnO3. This instability is more apparent in Coulometric titration experiments than in thermogravimetric analysis. The Coulometric titration experiments are necessarily slow in order to achieve equilibrium oxygen compositions.

  3. Systematic evaluation of Co-free LnBaFe2O5+δ (Ln = Lanthanides or Y) oxides towards the application as cathodes for intermediate-temperature solid oxide fuel cells

    International Nuclear Information System (INIS)

    Chen Dengjie; Wang Fucun; Shi Huangang; Ran Ran; Shao Zongping

    2012-01-01

    Co-free oxides with a nominal composition of LnBaFe 2 O 5+δ , where Ln = La, Pr, Nd, Sm, Gd, and Y, were synthesized and phase structure, oxygen content, electronic conductivity, oxygen desorption, thermal expansion, microstructure and electrochemical performance were systematically investigated. Among the series of materials tested, LaBaFe 2 O 5+δ oxide showed the largest electronic conductivity and YBaFe 2 O 5+δ oxide had the smallest thermal expansion coefficient (TEC) of 14.6 × 10 −6 K −1 within a temperature range of 200–900 °C. All LnBaFe 2 O 5+δ oxides typically possess the TEC values smaller than 20 × 10 −6 K −1 . The oxygen content, electronic conductivity and TEC values are highly dependent on the cation size of the Ln 3+ dopant. The lowest electrode polarization resistance in air under open circuit voltage condition was obtained for SmBaFe 2 O 5+δ electrode and was approximately 0.043, 0.084, 0.196, 0.506 and 1.348 Ω cm 2 at 800, 750, 700, 650 and 600 °C, respectively. The SmBaFe 2 O 5+δ oxide also demonstrated the best performance after a cathodic polarization. A cell with a SmBaFe 2 O 5+δ cathode delivered peak power densities of 1026, 748, 462, 276 and 148 mW cm −2 at 800, 750, 700, 650 and 600 °C, respectively. The results suggest that certain LnBaFe 2 O 5+δ oxides have sufficient electrochemical performance to be promising candidates for cathodes in intermediate-temperature solid oxide fuel cells.

  4. Low-loss optical waveguides made with molecular beam epitaxial In(0.012)Ga(0.988)As and In(0.2)Ga(0.8)As-GaAs superlattices

    Science.gov (United States)

    Das, U.; Bhattacharya, P. K.; Dhar, S.

    1986-01-01

    Low-loss optical guiding in In-doped GaAs is demonstrated for the first time. Ridge waveguides are made with single In(0.012)Ga(0.988)As ternary layers and In(0.2)Ga(0.8)As-GaAs superlattices. Attenuation constants of about 1.3 dB/cm are measured and the principal loss mechanism is identified to be scattering at the ridge walls. It is expected that improved fabrication techniques will lead to guides with attenuation less than or equal to 0.5 dB/cm.

  5. Phase equilibria in the MgMoO4-Ln2(MoO4)3 (Ln=La,Gd) systems

    International Nuclear Information System (INIS)

    Fedorov, N.F.; Ipatov, V.V.; Kvyatkovskij, O.V.

    1980-01-01

    Phase equilibria in the MgMoO 4 -Ln 2 (MoO 4 ) 3 systems (Ln=La, Gd) have been studied by static and dynamic methods of the physico-chemical analysis, using differential thermal, visual-polythermal, crystal-optical, X-ray phase, and infrared spectroscopic methods, and their phase diagrams have been constructed. Phase equilibria in the systems studied are characterized by limited solubility of components in the liquid state, formation of solid solutions on the base of α- and β-forms of Gd 2 (MoO 4 ) 3 . Eutectics in the MgMoO 4 -Ln 2 (MoO 4 ) 3 (Ln=La, Gd) systems corresponds to the composition of 71 mode % La 2 (MoO 4 ) 3 -29 mole % MgMoO 4 , tsub(melt)--935+-5 deg C and 57 mole % Gd 2 (MoO 4 ) 3 -43 mole % MgMoO 4 , tsub(melt)=1020+-5 deg C. The region of glass formation has been established [ru

  6. Temperature-dependent electrical characteristics and carrier transport mechanism of p-Cu2ZnSnS4/n-GaN heterojunctions

    Science.gov (United States)

    Niteesh Reddy, Varra; Reddy, M. Siva Pratap; Gunasekhar, K. R.; Lee, Jung-Hee

    2018-04-01

    This work explores the temperature-dependent electrical characteristics and carrier transport mechanism of Au/p-Cu2ZnSnS4/n-type GaN heterojunction (HJ) diodes with a CZTS interlayer. The electrical characteristics were examined by current-voltage-temperature, turn-on voltage-temperature and series resistance-temperature in the high-temperature range of 300-420 K. It is observed that an exponential decrease in the series resistance ( R S) and increase in the ideality factor ( n) and barrier height ( ϕ b) with increase in temperature. The thermal coefficient ( K j) is determined to be - 1.3 mV K-1 at ≥ 300 K. The effective ϕ b is determined to be 1.21 eV. This obtained barrier height is consistent with the theoretical one. The characteristic temperature ( T 0) resulting from the Cheung's functions [d V/d(ln I) vs. I and H( I) vs. I], is seen that there is good agreement between the T 0 values from both Cheung's functions. The relevant carrier transport mechanisms of Au/p-CZTS/n-type GaN HJ are explained based on the thermally decreased energy band gap of n-type GaN layers, thermally activated deep donors and increased further activated shallow donors.

  7. Digital LN2 control system for superconducting linac at PLF, Mumbai

    International Nuclear Information System (INIS)

    Karande, J.N.; Dhumal, P.; Takke, A.N.; Pal, S.; Nanal, V.; Pillay, R.G.

    2013-01-01

    The superconducting LINAC at PLF, Mumbai has a modular structure with eight cryostats divided in two groups. Each cryostat has a LN2 vessel of ∼ 40L capacity, which serves as a thermal shield for helium vessel. A coaxial capacitance type sensor is developed in house to measure the LN2 level. Monostable multi-vibrator based readout electronics is designed to measure the change in capacitance due to LN2 level change. The sensor capacitance with a fixed value resistor decides the 'ON' time of the monostable multi-vibrator. A 16 bit timer of microcontroller 8051 is used to measure the pulse width. The change in pulse width is converted into a LN2 level and displayed on a 4*20 LCD screen. The control unit is also equipped with automatic control of LN2 filling valves triggered by levels. The digital LN2 control can be operated locally or remotely via a serial RS232 communication line.Two control stations are designed and developed to take care of eight cryostats. (author)

  8. Controllable synthesis of Ln3+ (Ln = Tb, Eu) doped zinc phosphate nano-/micro-structured materials: phase, morphology and luminescence properties

    Science.gov (United States)

    Yue, Dan; Lu, Wei; Li, Chunyang; Zhang, Xinlei; Liu, Chunxia; Wang, Zhenling

    2014-01-01

    Ln3+ (Ln = Tb, Eu) doped zinc phosphate tetrahydrate (ZPT:Ln3+) and ammonium zinc phosphate (AZP:Ln3+) nano-/micro-structured materials were synthesized in aqueous solution without the addition of any structure-directing agent. The phase structures, morphologies and luminescence properties of the as-synthesized samples were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM), photoluminescence (PL) spectroscopy and lifetime. These investigations indicate that different phosphate sources MnH(3-n)PO4 (M = NH4+ or Na+, n = 1, 2, 3) can lead to the altering of morphology from nanosheet to microflower, but have no significant effect on the phase structure of the samples. The microlump, nanosheet, and microflower (constructed by the primary microlumps or nanosheets) of orthorhombic ZPT:Ln3+ could be selectively prepared by adjusting the pH value from 3.5 to 7.0. A mixture of orthorhombic ZPT:Ln3+ and monoclinic AZP:Ln3+ with a microflower morphology was obtained when the pH value was adjusted to 8.0. Monoclinic AZP:Ln3+ microplate, microcube and nanoparticle morphologies were obtained at pH values of 8.5, 9.0 and 11.0 respectively. The phase transformation and growth mechanism of the diverse morphologies were proposed, and ZPT:Ln3+ (Ln3+ = Eu or Tb) samples exhibit red or green emission under the excitation of UV light.Ln3+ (Ln = Tb, Eu) doped zinc phosphate tetrahydrate (ZPT:Ln3+) and ammonium zinc phosphate (AZP:Ln3+) nano-/micro-structured materials were synthesized in aqueous solution without the addition of any structure-directing agent. The phase structures, morphologies and luminescence properties of the as-synthesized samples were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM), photoluminescence (PL) spectroscopy and lifetime. These

  9. Magnetic properties and structural transitions of fluorite-related rare earth osmates Ln3OsO7 (Ln=Pr, Tb)

    International Nuclear Information System (INIS)

    Hinatsu, Yukio; Doi, Yoshihiro

    2013-01-01

    Ternary rare-earth osmates Ln 3 OsO 7 (Ln=Pr, Tb) have been prepared. They crystallize in an ortho-rhombic superstructure of cubic fluorite with space group Cmcm. Both of these compounds undergo a structural phase transition at 130 K (Ln=Pr) and 580 K (Ln=Tb). These compounds show complex magnetic behavior at low temperatures. Pr 3 OsO 7 exhibits magnetic transitions at 8 and 73 K, and Tb 3 OsO 7 magnetically orders at 8 and 60 K. The Os moments become one-dimensionally ordered, and when the temperature is furthermore decreased, it provokes the ordering in the Ln 3+ sublattice that simultaneously becomes three-dimensionally ordered with the Os sublattice. - Graphical abstract: Ternary rare-earth osmates Ln 3 OsO 7 (Ln=Pr, Tb) have been prepared. They crystallize in an orthorhombic superstructure of cubic fluorite with space group Cmcm. Both of these compounds undergo a structural phase transition at 130 K (Ln=Pr) and 580 K (Ln=Tb). These compounds show complex magnetic behavior at low temperatures. Pr 3 OsO 7 exhibits magnetic transitions at 8 and 73 K, and Tb 3 OsO 7 magnetically orders at 8 and 60 K. Highlights: ► Ternary rare-earth osmates Ln 3 OsO 7 (Ln=Pr, Tb) with an ordered defect-fluorite structure have been prepared. ► Both of these compounds undergo a structural phase transition at 130 K (Ln=Pr) and 580 K (Ln=Tb). ► These compounds show complex magnetic behavior at low temperatures due to magnetic ordering of Ln and Os.

  10. High-pressure syntheses of lanthanide polysulfides and polyselenides LnX_1_._9 (Ln = Gd-Tm, X = S, Se)

    International Nuclear Information System (INIS)

    Mueller, Carola J.; Schwarz, Ulrich; Doert, Thomas

    2012-01-01

    The polysulfides LnS_1_._9 and polyselenides LnSe_1_._9 of the lanthanide metals from gadolinium to thulium were prepared by high-pressure high-temperature synthesis. The compounds adopt the tetragonal CeSe_1_._9 structure type in space group P4_2/n (No. 86) with lattice parameters of 8.531 Aa ≤ a ≤ 8.654 Aa and 15.563 Aa ≤ c ≤ 15.763 Aa for the sulfides and 8.869 Aa ≤ a ≤ 9.076 Aa and 16.367 Aa ≤ c ≤ 16.611 Aa for the selenides. The atomic pattern consists of puckered double slabs [LnX]"+ and planar chalcogenide layers with ten possible chalcogen positions, of which eight are occupied by chalcogen atoms forming dinuclear X_2"2"- dianions, one by a single X"2"- ion and one remaining vacant. This resembles a √5 x √5 x 2 superstructure of the ZrSSi aristotype. Structural relationships to the aristotype and the related lanthanide polychalcogenides LnX_2_-_δ (Ln = La-Tm, X = S-Te, δ = 0 - 0.3) are discussed. The samples synthesized under high-pressure conditions (p > 1 GPa) decompose slowly under release of sulfur or selenium at ambient conditions. The crystal structure of a partially degraded thulium-polysulfide sample can be described as an incommensurate variant of the original TmS_1_._9 motif. Additionally, the isostructural ternary compound Gd(S_1_-_xSe_x)_1_._9 was synthesized and characterized by powder X-ray diffraction. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. New family of lanthanide-based inorganic-organic hybrid frameworks: Ln2(OH)4[O3S(CH2)nSO3]·2H2O (Ln = La, Ce, Pr, Nd, Sm; n = 3, 4) and their derivatives.

    Science.gov (United States)

    Liang, Jianbo; Ma, Renzhi; Ebina, Yasuo; Geng, Fengxia; Sasaki, Takayoshi

    2013-02-18

    We report the synthesis and structure characterization of a new family of lanthanide-based inorganic-organic hybrid frameworks, Ln(2)(OH)(4)[O(3)S(CH(2))(n)SO(3)]·2H(2)O (Ln = La, Ce, Pr, Nd, Sm; n = 3, 4), and their oxide derivatives. Highly crystallized samples were synthesized by homogeneous precipitation of Ln(3+) ions from a solution containing α,ω-organodisulfonate salts promoted by slow hydrolysis of hexamethylenetetramine. The crystal structure solved from powder X-ray diffraction data revealed that this material comprises two-dimensional cationic lanthanide hydroxide {[Ln(OH)(2)(H(2)O)](+)}(∞) layers, which are cross-linked by α,ω-organodisulfonate ligands into a three-dimensional pillared framework. This hybrid framework can be regarded as a derivative of UCl(3)-type Ln(OH)(3) involving penetration of organic chains into two {LnO(9)} polyhedra. Substitutional modification of the lanthanide coordination promotes a 2D arrangement of the {LnO(9)} polyhedra. A new hybrid oxide, Ln(2)O(2)[O(3)S(CH(2))(n)SO(3)], which is supposed to consist of alternating {[Ln(2)O(2)](2+)}(∞) layers and α,ω-organodisulfonate ligands, can be derived from the hydroxide form upon dehydration/dehydroxylation. These hybrid frameworks provide new opportunities to engineer the interlayer chemistry of layered structures and achieve advanced functionalities coupled with the advantages of lanthanide elements.

  12. Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique

    International Nuclear Information System (INIS)

    Zhang Tiemin; Miao Guoqing; Jin Yixin; Yu Shuzhen; Jiang Hong; Li Zhiming; Song Hang

    2009-01-01

    In 0.8 Ga 0.2 As was grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) on InP(1 0 0) substrate with two-step growth technique. Effect of buffer thickness on crystalline quality, surface morphology, electrical property and stress of In 0.8 Ga 0.2 As epilayer was analyzed, and properties of the In 0.8 Ga 0.2 As epilayer were characterized by X-ray diffraction, scanning electron microscopy, Hall measurements and Raman scattering. The experiments showed that the properties of the In 0.8 Ga 0.2 As epilayer had close relation to the buffer thickness and the optimum buffer thickness was about 100 nm

  13. Magnetic interactions in rhenium-containing rare earth double perovskites Sr{sub 2}LnReO{sub 6} (Ln=rare earths)

    Energy Technology Data Exchange (ETDEWEB)

    Nishiyama, Atsuhide; Doi, Yoshihiro; Hinatsu, Yukio, E-mail: hinatsu@sci.hokudai.ac.jp

    2017-04-15

    The perovskite-type compounds containing both rare earth and rhenium Sr{sub 2}LnReO{sub 6} (Ln=Y, Tb-Lu) have been prepared. Powder X-ray diffraction measurements and Rietveld analysis show that Ln{sup 3+} and Re{sup 5+} ions are structurally ordered at the B site of the perovskite SrBO{sub 3}. Magnetic anomalies are found in their magnetic susceptibility and specific heat measurements at 2.6–20 K for Ln=Y, Tb, Dy, Yb, Lu compounds. They are due to magnetic interactions between Re{sup 5+} ions. The results of the magnetic hysteresis and remnant magnetization measurements for Sr{sub 2}YReO{sub 6} and Sr{sub 2}LuReO{sub 6} indicate that the antiferromagnetic interactions between Re{sup 5+} ions below transition temperatures have a weak ferromagnetic component. The analysis of the magnetic specific heat data for Sr{sub 2}YbReO{sub 6} shows that both the Yb{sup 3+} and Re{sup 5+} ions magnetically order at 20 K. For the case of Sr{sub 2}DyReO{sub 6}, magnetic ordering of the Re{sup 5+} moments occurs at 93 K, and with decreasing temperature, the moments of Dy{sup 3+} ferromagnetically order at 5 K from the measurements of magnetic susceptibility and specific heat. - Graphical abstract: Crystal structure of double perovskite Sr{sub 2}LnReO{sub 6}. Red and black lines show cubic and monoclinic unit cells, respectively. - Highlights: • Double perovskites Sr{sub 2}LnReO{sub 6} (Ln=rare earths) were prepared. • They show an antiferromagnetic transition at 2.6–20 K. • In Sr{sub 2}DyReO{sub 6}, Dy and Re moments magnetically order at 5 and 93 K, respectively.

  14. Phase relations in Ca(Sr)MoO4-Ln2(NoO4)3 systems (Ln = Pr-Lu)

    International Nuclear Information System (INIS)

    Vakalyuk, V.V.; Evdokimov, A.A.; Berezina, T.A.

    1982-01-01

    Using the methods of X-ray phase and differential thermal analyses phase ratios in the systems Ca(Sr)MoO 4 -Ln 2 (MoO 4 ) 3 at Ln=Pr-Lu are studied and phase diagrams of the systems CaMoO 4 -Ln 2 (MoO 4 ) 3 , for Ln=Nd, Gd, Yb and SrMoO 4 -Sm 2 (MoO 4 ) 3 are built. It is shown that phase ratios in the systems are similar for the following groups of rare earths: Pr-Sm, Eu-Tb, Ho-Lu. In the first group of systems ordered phase over all subsolidus region are formed, in the second one - ordered phases with scheelite-like structure and wide regions of homogeneity on the basis of Ca(Sr)MoO 4 are formed above the temperature of polymorphous transformation of rare earth molybdates, for the third group of systems intermediate compounds are not detected

  15. Structural anomalies, spin transitions and charge disproportionation in LnCoO.sub.3./sub..

    Czech Academy of Sciences Publication Activity Database

    Knížek, Karel; Jirák, Zdeněk; Hejtmánek, Jiří; Henry, P.; André, G.

    2008-01-01

    Roč. 103, č. 7 (2008), 07B703/1-07B703/3 ISSN 0021-8979 R&D Projects: GA ČR GA202/06/0051 Institutional research plan: CEZ:AV0Z10100521 Keywords : LnCoO 3 * neutron diffraction * thermal expansion * spin-state transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.201, year: 2008

  16. Reaction of (CP(2)asterisk-lnH)(2) (ln=Y, La) and CP(2)asterisk-Y(2-C(6)H(4)CH(2)NMe(2)) with esters and amides and molecular-structure of [CP(2)asterisk-Y(mu- ocme=chc(oet)o)](2)

    NARCIS (Netherlands)

    Deelman, B.J; Wierda, F.; Meetsma, A.; Teuben, J.H

    1995-01-01

    The activation of esters and amides by (Cp(2)*LnH)(2) [Ln = Y (1a), Ln = La (1b), Cp*=C(5)Me] and Cp(2)*Y(2-C(6)H(4)CH(2)NMe(2)) (2) is described. Compounds 1a and 1b react with ethyl acetate to form Cp(2)*YOEt (3a) and Cp(2)*LaOEt (30). With 1a and ethyl benzoate a 1:1 mixture of 3a and

  17. Investigation of phase relationships in subsolidus region of Ln2O3-MoO3-B2O3 systems

    International Nuclear Information System (INIS)

    Lysanova, C.V.; Dzhurinskij, B.F.; Komova, M.G.; Tananaev, I.V.

    1983-01-01

    Phase formation in subsolidus region of Ln 2 O 3 -MoO 3 B 2 O 3 systems (Ln-La, Nd) is studied. Three compounds with mixed oxyanions-boratomolybdates of LnMoBO 6 composition (Ln-La, Ce, Pr, Nd), Ln 2 MoB 2 O 9 (Ln-La, Ce, Pr, Nd, Sm, EU, Gde Tb) Ln 6 Mo 3 B 4 0 24 (Ln-Pr, Nd) are revealed and described

  18. Electrical conductivity of cobalt doped La{sub 0.8}Sr{sub 0.2}Ga{sub 0.8}Mg{sub 0.2}O{sub 3-{delta}}

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Shizhong; Wu, Lingli; Liang, Ying [Department of Chemistry, Xiamen University, Xiamen 361005, Fujian (China)

    2007-03-30

    La{sub 0.8}Sr{sub 0.2}Ga{sub 0.8}Mg{sub 0.2}O{sub 3-{delta}} (LSGM8282), La{sub 0.8}Sr{sub 0.2}Ga{sub 0.8}Mg{sub 0.15}Co{sub 0.05}O{sub 3-{delta}} (LSGMC5) and La{sub 0.8}Sr{sub 0.2}Ga{sub 0.8}Mg{sub 0.115}Co{sub 0.085}O{sub 3-{delta}} (LSGMC8.5) were prepared using a conventional solid-state reaction. Electrical conductivities and electronic conductivities of the samples were measured using four-probe impedance spectrometry, four-probe dc polarization and Hebb-Wagner polarization within the temperature range of 973-1173 K. The electrical conductivities in LSGMC5 and LSGMC8.5 increased with decreasing oxygen partial pressures especially in the high (>10{sup -5} atm) and low oxygen partial pressure regions (<10{sup -15} atm). However, the electrical conductivity in LSGM8282 had no dependency on the oxygen partial pressure. At temperatures higher than 1073 K, P{sub O{sub 2}} dependencies of the free electron conductivities in LSGM8282, LSGMC5 and LSGMC8.5 were about -1/4, and P{sub O{sub 2}} dependencies of the electron hole conductivities were about 0.25, 0.12 and 0.07, respectively. Oxygen ion conductivities in LSGMC5 and LSGMC8.5 increased with decreasing oxygen partial pressures especially in the high and low oxygen partial pressure regions, which was due to the increase in the concentration of oxygen vacancies. The change in the concentration of oxygen vacancies and the valence of cobalt with oxygen partial pressure were determined using a thermo-gravimetric technique. Both the electronic conductivity and oxygen ion conductivity in cobalt doped lanthanum gallate samples increased with increasing concentration of cobalt, suggesting that the concentration of cobalt should be optimized carefully to maintain a high electrical conductivity and close to 1 oxygen ion transference number. (author)

  19. Synthesis and Structures of Two Lanthanide Complexes Containing a Mixed Ligand System: [Ln(Phen)2(L)3(HL)]·H2O [Ln = La, Ce; Phen = Phenanthroline; HL = Salicylic Acid

    International Nuclear Information System (INIS)

    Iravani, Effat; Nami, Navabeh; Nabizadeh, Fatemeh; Bayani, Elham; Neumueller, Bernhard

    2013-01-01

    The reaction of LnCl 3 ·7H 2 O [Ln = La (1), Ce (2)] with salicylic acid (HL) and 1,10-phenanthroline (Phen) at 20 .deg. C in H 2 O/ethanol gave after work-up and recrystallization two novel lanthanide complexes with general formula [Ln(Phen) 2 (L) 3 (HL)]·H 2 O. Compounds 1 and 2 were characterized by IR and UV-Vis spectroscopy, TGA, CHN as well as by X-ray analysis. According to these results, compounds 1 and 2 are isostructural and contain Ln 3+ ions with coordination number nine. Complexes 1 and 2 consist of two Phen, one neutral HL and three L anions (two L anions act as monodentate ligands and the third one is chelating to Ln 3+ ). Thermal decomposition led to primary loss of the Phen molecules. Then HL molecules and finally L moieties left the material to give Ln 2 O 3

  20. Photoluminescence properties of lanthanide-organic frameworks (LnOFs) with thiophene-2,5-dicarboxylate and acetate

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jing; Wei, Qing; Xie, Gang; Chen, Sanping [Key Lab. of Synthetic and Natural Functional Molecule Chemistry of Ministry of Education, College of Chemistry and Materials Science, Northwest Univ., Xi' an, Shaanxi (China); Zhang, Sheng [Key Lab. of Synthetic and Natural Functional Molecule Chemistry of Ministry of Education, College of Chemistry and Materials Science, Northwest Univ., Xi' an, Shaanxi (China); College of Chemistry and Chemical Engineering, Baoji Univ. of Arts and Science, Baoji, Shaanxi (China)

    2017-07-17

    S-heterocyclic dicarboxylic acid, thiophene-2,5-dicarboxylic acid (H{sub 2}TDC), was employed to construct a series of lanthanide-organic frameworks (LnOFs) with coligand acetate, formulated as [Ln(TDC)(OAc)(H{sub 2}O)]{sub n} [Ln = Eu (1), Tb (2), Gd (3), Dy (4), Sm (5)] under hydrothermal conditions. Structure analysis reveals that 1-5 have dinuclear 3D metal organic frameworks (MOFs), in which TDC{sup 2-} and OAc{sup -} display (κ{sup 1}-κ{sup 1})-(κ{sup 1}-κ{sup 1})-μ{sub 4} and (κ{sup 2}-κ{sup 1})-μ{sub 2} coordination fashions, respectively. The dehydrated products of all compounds show high thermal stability above 410 C. As for 1, 2, 4, and 5, the photoluminescence analyses exhibit characteristic luminescence emission bands of the corresponding lanthanide ions in the visible region. In particular, compound 2 displays bright green luminescence in the solid state with {sup 5}D{sub 4} lifetime of 0.510 ms and relative high overall quantum yield of 16 %, based on an ideal energy gap between the lowest triplet state energy level of H{sub 2}TDC ligand and the {sup 5}D{sub 4} state energy level of Tb{sup 3+}. The energy transfer mechanisms in compounds 1 and 2 were also discussed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. The structural, electronic and magnetic properties of Ga{sub 8−x}Mn{sub x}As{sub 8} clusters

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Gangxu [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Xiang, Gang, E-mail: gxiang@scu.edu.cn [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Luo, Jia; Tang, Zhijie [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Zhang, Xi, E-mail: xizhang@scu.edu.cn [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China)

    2015-06-15

    We systematically investigate the ground-state magnetic properties of Ga{sub 8−x}Mn{sub x}As{sub 8} clusters (x=0, 2, 4, 6, and 8) within the framework of density functional theory (DFT) using a strategy that successively adopts the particle swarm optimization (CALYPSO) code and fixed spin-moment (FSM) method. The results show that for Ga{sub 8−x}Mn{sub x}As{sub 8} in the ground states or low-lying isomers, Mn atoms tend to assemble at the core of the clusters and the ferrimagnetic Mn–Mn couplings are identified for Ga{sub 8−x}Mn{sub x}As{sub 8} (x=4, 6, and 8), while Ga{sub 8}As{sub 8} and Ga{sub 6}Mn{sub 2}As{sub 8} are nonmagnetic. The possibility of multiple ground states of Ga{sub 8−x}Mn{sub x}As{sub 8} (x=4, 6, and 8) is also demonstrated. The binding energy and LUMO–HOMO gap analysis show that Ga{sub 8−x}Mn{sub x}As{sub 8} clusters with large x are more likely synthesized and exhibit stronger chemical reactivity. - Highlights: • The ground-state structural and magnetic configurations of Ga{sub 8-x}Mn{sub x}As{sub 8} clusters are predicted by using the particle swarm optimization (CALYPSO) code and fixed spin-moment method. • For the ground state and low-lying isomers of Ga{sub 8−x}Mn{sub x}As{sub 8} clusters, Mn atoms are gathered at the core of cluster, and ferrimagnetic Mn–Mn coupling is found. • Ga{sub 8−x}Mn{sub x}As{sub 8} with large x is more likely formed and reacts with each other to create larger clusters.

  2. A determination of the oxygen non-stoichiometry of the oxygen storage materials LnBaMn{sub 2}O{sub 5+δ} (Ln=Gd, Pr)

    Energy Technology Data Exchange (ETDEWEB)

    Jeamjumnunja, Kannika; Gong, Wenquan; Makarenko, Tatyana; Jacobson, Allan J., E-mail: ajjacob@uh.edu

    2016-07-15

    The A-site ordered double-perovskite oxides, LnBaMn{sub 2}O{sub 5+δ} (Ln=Gd, Pr), were synthesized and investigated to understand the effect of A site cation substitution on the oxygen storage properties of these materials. The present results are compared with our previous data for YBaMn{sub 2}O{sub 5+δ}. The results clearly reveal that changing the Ln cation strongly influences the oxidation/reduction behavior of LnBaMn{sub 2}O{sub 5+δ}. Based on thermogravimetric analysis data, oxygen uptake begins at lower temperatures in both air and oxygen in compounds with Ln{sup 3+} ions larger than Y{sup 3+}. These oxides exhibit almost complete and reversible oxygen uptake/release between fully-reduced LnBaMn{sub 2}O{sub 5} and fully-oxidized LnBaMn{sub 2}O{sub 6} during changes of the oxygen partial pressure between air and 1.99% H{sub 2}/Ar. In addition, the oxygen non-stoichiometries of GdBaMn{sub 2}O{sub 5+δ} and PrBaMn{sub 2}O{sub 5+δ} were determined as a function of pO{sub 2} at 600, 650, 700 and 750 °C by Coulometric titration at near-equilibrium conditions. The results confirm that these materials have two distinct phases on oxidation/reduction with δ≈0, 0.5 and a third phase with a range of composition with an oxygen content (5+δ) approaching ~6. The stabilities of the LnBaMn{sub 2}O{sub 5+δ} phases extend over a wide range of oxygen partial pressures (∼10{sup −25}≤pO{sub 2} (atm)≤∼1) depending on temperature. Isothermal experiments show that the larger the Ln{sup 3+} cation the lower pO{sub 2} for phase conversion. At some temperatures and pO{sub 2} conditions, the LnBaMn{sub 2}O{sub 5+δ} compounds are unstable with respect to decomposition to BaMnO{sub 3−δ} and LnMnO{sub 3}. This instability is more apparent in Coulometric titration experiments than in thermogravimetric analysis. The Coulometric titration experiments are necessarily slow in order to achieve equilibrium oxygen compositions. - Graphical abstract: Structure of Ln

  3. Hydrazinium lanthanide oxalates: synthesis, structure and thermal reactivity of N2H5[Ln2(C2O4)4(N2H5)]·4H2O, Ln = Ce, Nd.

    Science.gov (United States)

    De Almeida, Lucie; Grandjean, Stéphane; Rivenet, Murielle; Patisson, Fabrice; Abraham, Francis

    2014-03-28

    New hydrazinium lanthanide oxalates N2H5[Ln2(C2O4)4(N2H5)]·4H2O, Ln = Ce (Ce-HyOx) and Nd (Nd-HyOx), were synthesized by hydrothermal reaction at 150 °C between lanthanide nitrate, oxalic acid and hydrazine solutions. The structure of the Nd compound was determined from single-crystal X-ray diffraction data, space group P2₁/c with a = 16.315(4), b = 12.127(3), c = 11.430(2) Å, β = 116.638(4)°, V = 2021.4(7) Å(3), Z = 4, and R1 = 0.0313 for 4231 independent reflections. Two distinct neodymium polyhedra are formed, NdO9 and NdO8N, an oxygen of one monodentate oxalate in the former being replaced by a nitrogen atom of a coordinated hydrazinium ion in the latter. The infrared absorption band at 1005 cm(-1) confirms the coordination of N2H5(+) to the metal. These polyhedra are connected through μ2 and μ3 oxalate ions to form an anionic three-dimensional neodymium-oxalate arrangement. A non-coordinated charge-compensating hydrazinium ion occupies, with water molecules, the resulting tunnels. The N-N stretching frequencies of the infrared spectra demonstrate the existence of the two types of hydrazine ions. Thermal reactivity of these hydrazinium oxalates and of the mixed isotypic Ce/Nd (CeNd-HyOx) oxalate were studied by using thermogravimetric and differential thermal analyses coupled with gas analyzers, and high temperature X-ray diffraction. Under air, fine particles of CeO2 and Ce(0.5)Nd(0.5)O(1.75) are formed at low temperature from Ce-HyOx and CeNd-HyOx, respectively, thanks to a decomposition/oxidation process. Under argon flow, dioxymonocyanamides Ln2O2CN2 are formed.

  4. Deep levels in as-grown and Si-implanted In(0.2)Ga(0.8)As-GaAs strained-layer superlattice optical guiding structures

    Science.gov (United States)

    Dhar, S.; Das, U.; Bhattacharya, P. K.

    1986-01-01

    Trap levels in about 2-micron In(0.2)Ga(0.8)As(94 A)/GaAs(25 A) strained-layer superlattices, suitable for optical waveguides, have been identified and characterized by deep-level transient spectroscopy and optical deep-level transient spectroscopy measurements. Several dominant electron and hole traps with concentrations of approximately 10 to the 14th/cu cm, and thermal ionization energies Delta-E(T) varying from 0.20 to 0.75 eV have been detected. Except for a 0.20-eV electron trap, which might be present in the In(0.2)Ga(0.8)As well regions, all the other traps have characteristics similar to those identified in molecular-beam epitaxial GaAs. Of these, a 0.42-eV hole trap is believed to originate from Cu impurities, and the others are probably related to native defects. Upon Si implantation and halogen lamp annealing, new deep centers are created. These are electron traps with Delta-E(T) = 0.81 eV and hole traps with Delta-E(T) = 0.46 eV. Traps occurring at room temperature may present limitations for optical devices.

  5. Polymorphism of Bi1-xLnxO1.5 phases (04Ln2O9 (x=0.33; Ln=La, Pr, Nd)

    International Nuclear Information System (INIS)

    Drache, Michel; Huve, Marielle; Roussel, Pascal; Conflant, Pierre

    2003-01-01

    The Bi 1-x Ln x O 1.5 solid solutions (Ln=La, Pr, Nd), of the β 2 /β 1 /ε (Bi-Sr-O) structural type, have been investigated in their Ln-rich domains. For Ln=La, Pr, and Nd, the upper limits are 0.35, 0.35 and 0.33, respectively. The Bi 4 Ln 2 O 9 ε phase (x=0.33) appears to be the single definite compound. For Bi 4 La 2 O 9 , Bi 4 Pr 2 O 9 and Bi 4 Nd 2 O 9 , the ε-type cells are respectively: a=9.484(4) A, b=3.982(2) A, c=7.030(3) A, β=104.75(3) deg.; a=9.470(5) A, b=3.945(2) A, c=6.968(4) A, β=104.73(3) deg. and a=9.439(3) A, b=3.944(2) A, c=6.923(2) A, β=105.03(3) deg. . Upon heating, each monoclinic (ε) compound transforms successively into rhombohedral phases (β 2 /β 1 ) and finally into a cubic fluorite-type phase. For La- and Pr-based compounds, all transitions are reversible; for Nd, depending on the thermal treatment, the reversibility of ε→β 2 can be incomplete. These transformations are characterized using X-ray thermodiffractometry, differential thermal analysis, dilatometry and impedance spectroscopy versus temperature. Examination of Bi 4 (Ln, Ln') 2 O 9 samples allows to correlate the evolution of the thermal behavior and of the unit cell parameters, to the lanthanide size. A partial plot of the (Bi 2 O 3 ) 1-x -(La 2 O 3 ) x phase diagram (0≤x≤0.40) is proposed

  6. Synthesis and properties of compounds (Ln(NO/sub 3/)/sub 2/(OP(N(CH/sub 3/)/sub 2/)/sub 3/)/sub 4/)B(C/sub 6/H/sub 5/)/sub 4/ (Ln=Y,La, Ce-Lu)

    Energy Technology Data Exchange (ETDEWEB)

    Skopenko, V V; Zub, Yu L; Matishinets, I M [Kievskij Gosudarstvennyj Univ. (Ukrainian SSR)

    1984-01-01

    From acetone solutions with the yield 75-80% compounds of the composition (Ln(NO/sub 3/)/sub 2/(OP(Nx(CN/sub 3/)/sub 2/)/sub 3/))B(C/sub 6/H/sub 5/)/sub 4/ (Ln=Y, La, Ce-Lu) have been separated. Comparing diffractograms the existence of two isostructural series with morphotropic transition at the Nd/Sm boundary has been established. Using the data of conductometry and IR spectroscopy it has been shown that the cation coordination number of the central atom is eight: four O atoms from two bidentate-cyclic nitrate groups and four O atoms from four monodentate phosphineoxide ligands. Measurement of electric conductivity of the substances separated in nitromethane has shown that the value lambdasub(M) varies inconsiderably from the value 48 Ohm/sup -1/xcm/sup 2/xmol/sup -1/.

  7. Predictable self-assembled [2×2] Ln(III)4 square grids (Ln = Dy,Tb)-SMM behaviour in a new lanthanide cluster motif.

    Science.gov (United States)

    Anwar, Muhammad Usman; Thompson, Laurence Kenneth; Dawe, Louise Nicole; Habib, Fatemah; Murugesu, Muralee

    2012-05-14

    The ditopic carbohydrazone ligand (L1) produces the square, self-assembled [2×2] grids [Dy(4)(L1)(4)(OH)(4)]Cl(2) (1) and [Ln(4)(L1)(4)(μ(4)-O)(μ(2)-1,1-N(3))(4)] (Ln = Dy (2), Tb (3)), with 2 exhibiting SMM behaviour. Two relaxation processes occur with U(eff) = 51 K, 91 K in the absence of an external field, and one with U(eff) = 270 K in the presence of a 1600 Oe optimum field. This journal is © The Royal Society of Chemistry 2012

  8. Usefulness of Ga-67 citrate whole body imaging, chest spot imaging, and chest SPECT in sarcoidosis

    International Nuclear Information System (INIS)

    Ueno, Kyoichi; Nishi, Koichi; Namura, Masanobu; Kawashima, Yoshio; Kurumaya, Hiroshi

    1999-01-01

    To assess the sensitivity, and the relative role of Ga-67 whole body, chest spot imaging, and chest SPECT, we retrospectively studied 34 cases of sarcoidosis (24 biopsy proven, 10 clinically diagnosed) with Ga-67 (111 MBq), and compared the results of lung (25 cases), muscle (25 cases), skin (3 cases), and myocardial (2 cases) biopsies. Ga-67 chest SPECT (single photon emission CT) were done in 17 cases with Siemens MultiSPECT3. Ga-67 planar imaging visualized only 2 of 12 (16.7%) lung biopsy-positive cases, 5 of 12 (41.6%) muscle biopsy-positive cases, 2 of 3 (66.7%) skin biopsy-positive cases. However, Ga-67 imaging revealed the lesions in 1 of 9 (11.1%) of muscle biopsy-negative cases, in 2 of 3 (66.7%) of skin biopsy-negative cases, and in 1 of 2 myocardial biopsy-negative cases. Ga-67 chest SPECT visualized 14 hilar lymphadenopathy (LN), 3 supraclavicular LN, and 1 myocardial sarcoidosis. Although both SPECT, and planar spot imaging detected the lesions equally, the former showed them more clearly. Compared with various biopsies, the sensitivity of Ga-67 imaging was not so high. However, Ga-67 imaging is non-invasive, easy to perform the whole body imaging, and can detect the activity of the lesions. Ga-67 SPECT showed clear imaging of the hilar, mediastinal LN, and potentially fatal myocardial sarcoidosis. (author)

  9. Phase formation in the Li2MoO4-Rb2MoO4-Ln2(MoO4)3 systems and the properties of LiRbLn2(MoO4)4

    International Nuclear Information System (INIS)

    Basovich, O.M.; Khajkina, E.G.; Vasil'ev, E.V.; Frolov, A.M.

    1995-01-01

    Phase equilibria within subsolidus range of ternary salt systems Li 2 MoO 4 -Rb 2 MoO 4 -Ln 2 (MoO 4 ) 4 (Ln - Nd, Er) are analyzed. Formation of ternary molybdate LiRbNd 2 (MoO 4 ) 4 is proved along LiNd(MoO 4 ) 2 -RbNd(MoO 4 )-2 cross-section. Phase diagram of this cross-section is plotted. Similar compounds are synthesized for Ln = La-Eu. The parameters of their monoclinic elementary cells are determined. Luminescent properties of LiRbLa 2 (MoO 4 ) 4 -Nd 3+ are studied. 17 refs., 4 figs., 2 tabs

  10. Some crystal chemistry of (Ln,Ce)2CuO4-δ superconductors

    International Nuclear Information System (INIS)

    Goodman, P.; Keating, A.; Myhra, S.; White, T.J.

    1989-01-01

    Compounds of the form (Ln, Sr, Ce) 2 CuO 4-δ (Ln = rare earth element) crystallise as the Nd 2 CuO 4 structure type, K 2 NiF 4 structure type or perfectly and imperfectly ordered intergrowths of these parent structures. These structurally similar phases exhibit superconductivity in which the charge carriers are holes (in Sr-doped material) or electrons (in Ce doped material). In this study, X-ray Photoelectron Spectroscopy (XPS) and High Resolution Electron Microscopy (HREM) were used to investigate the charge balancing mechanisms operating in each superconducting regime and the structural changes accompanying compositional variation. It was found that under slightly reducing conditions charge coupled cation substitutions predominate, whilst at low pO 2 ( -5 atm) perfectly ordered oxygen superlattices form. The structural and electronic changes which accompany deoxygenation were observed in situ during XPS and HREM observations. 29 refs., 8 figs., 3 tabs

  11. Magnetic properties and structural transitions of fluorite-related rare earth osmates Ln{sub 3}OsO{sub 7} (Ln=Pr, Tb)

    Energy Technology Data Exchange (ETDEWEB)

    Hinatsu, Yukio, E-mail: hinatsu@sci.hokudai.ac.jp [Division of Chemistry, Graduate School of Science, Hokkaido University, Sapporo 060-0810 (Japan); Doi, Yoshihiro [Division of Chemistry, Graduate School of Science, Hokkaido University, Sapporo 060-0810 (Japan)

    2013-02-15

    Ternary rare-earth osmates Ln{sub 3}OsO{sub 7} (Ln=Pr, Tb) have been prepared. They crystallize in an ortho-rhombic superstructure of cubic fluorite with space group Cmcm. Both of these compounds undergo a structural phase transition at 130 K (Ln=Pr) and 580 K (Ln=Tb). These compounds show complex magnetic behavior at low temperatures. Pr{sub 3}OsO{sub 7} exhibits magnetic transitions at 8 and 73 K, and Tb{sub 3}OsO{sub 7} magnetically orders at 8 and 60 K. The Os moments become one-dimensionally ordered, and when the temperature is furthermore decreased, it provokes the ordering in the Ln{sup 3+} sublattice that simultaneously becomes three-dimensionally ordered with the Os sublattice. - Graphical abstract: Ternary rare-earth osmates Ln{sub 3}OsO{sub 7} (Ln=Pr, Tb) have been prepared. They crystallize in an orthorhombic superstructure of cubic fluorite with space group Cmcm. Both of these compounds undergo a structural phase transition at 130 K (Ln=Pr) and 580 K (Ln=Tb). These compounds show complex magnetic behavior at low temperatures. Pr{sub 3}OsO{sub 7} exhibits magnetic transitions at 8 and 73 K, and Tb{sub 3}OsO{sub 7} magnetically orders at 8 and 60 K. Highlights: Black-Right-Pointing-Pointer Ternary rare-earth osmates Ln{sub 3}OsO{sub 7} (Ln=Pr, Tb) with an ordered defect-fluorite structure have been prepared. Black-Right-Pointing-Pointer Both of these compounds undergo a structural phase transition at 130 K (Ln=Pr) and 580 K (Ln=Tb). Black-Right-Pointing-Pointer These compounds show complex magnetic behavior at low temperatures due to magnetic ordering of Ln and Os.

  12. Heterospin systems constructed from [Cu2Ln]3+ and [Ni(mnt)2]1-,2- Tectons: First 3p-3d-4f complexes (mnt = maleonitriledithiolato).

    Science.gov (United States)

    Madalan, Augustin M; Avarvari, Narcis; Fourmigué, Marc; Clérac, Rodolphe; Chibotaru, Liviu F; Clima, Sergiu; Andruh, Marius

    2008-02-04

    New heterospin complexes have been obtained by combining the binuclear complexes [{Cu(H(2)O)L(1)}Ln(O(2)NO)(3)] or [{CuL(2)}Ln(O(2)NO)(3)] (L(1) = N,N'-propylene-di(3-methoxysalicylideneiminato); L(2) = N,N'-ethylene-di(3-methoxysalicylideneiminato); Ln = Gd(3+), Sm(3+), Tb(3+)), with the mononuclear [CuL(1)(2)] and the nickel dithiolene complexes [Ni(mnt)(2)](q)- (q = 1, 2; mnt = maleonitriledithiolate), as follows: (1)infinity[{CuL(1)}(2)Ln(O(2)NO){Ni(mnt)(2)}].Solv.CH(3)CN (Ln = Gd(3+), Solv = CH(3)OH (1), Ln = Sm(3+), Solv = CH(3)CN (2)) and [{(CH(3)OH)CuL(2)}(2)Sm(O(2)NO)][Ni(mnt)(2)] (3) with [Ni(mnt)2]2-, [{(CH(3)CN)CuL(1)}(2)Ln(H(2)O)][Ni(mnt)(2)]3.2CH(3)CN (Ln = Gd(3+) (4), Sm(3+) (5), Tb(3+) (6)), and [{(CH(3)OH)CuL(2)}{CuL(2)}Gd(O(2)NO){Ni(mnt)(2)}][Ni(mnt)(2)].CH(2)Cl(2) (7) with [Ni(mnt))(2]*-. Trinuclear, almost linear, [CuLnCu] motifs are found in all the compounds. In the isostructural 1 and 2, two trans cyano groups from a [Ni(mnt)2]2- unit bridge two trimetallic nodes through axial coordination to the Cu centers, thus leading to the establishment of infinite chains. 3 is an ionic compound, containing discrete [{(CH(3)OH)CuL(2)}(2)Sm(O(2)NO)](2+) cations and [Ni(mnt)(2)](2-) anions. Within the series 4-6, layers of discrete [CuLnCu](3+) motifs alternate with stacks of interacting [Ni(mnt)(2)](*-) radical anions, for which two overlap modes, providing two different types of stacks, can be disclosed. The strength of the intermolecular interactions between the open-shell species is estimated through extended Hückel calculations. In compound 7, [Ni(mnt)(2)](*-) radical anions coordinate group one of the Cu centers of a trinuclear [Cu(2)Gd] motif through a CN, while discrete [Ni(mnt)(2)](*-) units are also present, overlapping in between, but also with the coordinated ones. Furthermore, the [Cu(2)Gd] moieties dimerize each other upon linkage by two nitrato groups, both acting as chelate toward the gadolinium ion from one unit and monodentate toward a

  13. Rhombus-shaped tetranuclear [Ln4] complexes [Ln = Dy(III) and Ho(III)]: synthesis, structure, and SMM behavior.

    Science.gov (United States)

    Chandrasekhar, Vadapalli; Hossain, Sakiat; Das, Sourav; Biswas, Sourav; Sutter, Jean-Pascal

    2013-06-03

    The reaction of a new hexadentate Schiff base hydrazide ligand (LH3) with rare earth(III) chloride salts in the presence of triethylamine as the base afforded two planar tetranuclear neutral complexes: [{(LH)2Dy4}(μ2-O)4](H2O)8·2CH3OH·8H2O (1) and [{(LH)2Ho4}(μ2-O)4](H2O)8·6CH3OH·4H2O (2). These neutral complexes possess a structure in which all of the lanthanide ions and the donor atoms of the ligand remain in a perfect plane. Each doubly deprotonated ligand holds two Ln(III) ions in its two distinct chelating coordination pockets to form [LH(Ln)2](4+) units. Two such units are connected by four [μ2-O](2-) ligands to form a planar tetranuclear assembly with an Ln(III)4 core that possesses a rhombus-shaped structure. Detailed static and dynamic magnetic analysis of 1 and 2 revealed single-molecule magnet (SMM) behavior for complex 1. A peculiar feature of the χM" versus temperature curve is that two peaks that are frequency-dependent are revealed, indicating the occurrence of two relaxation processes that lead to two energy barriers (16.8 and 54.2 K) and time constants (τ0 = 1.4 × 10(-6) s, τ0 = 7.2 × 10(-7) s). This was related to the presence of two distinct geometrical sites for Dy(III) in complex 1.

  14. Hydrazinium lanthanide oxalates: synthesis, structure and thermal reactivity of N_2H_5[Ln_2(C_2O_4)_4(N_2H_5)].4H_2O, Ln = Ce, Nd

    International Nuclear Information System (INIS)

    De Almeida, Lucie; Grandjean, Stephane; Abraham, Francis; Rivenet, Murielle; Patisson, Fabrice

    2014-01-01

    New hydrazinium lanthanide oxalates N_2H_5[Ln_2(C_2O_4)_4(N_2H_5)].4H_2O, Ln = Ce (Ce-H_yO_x) and Nd (Nd- H_yO_x), were synthesized by hydrothermal reaction at 150 C between lanthanide nitrate, oxalic acid and hydrazine solutions. The structure of the Nd compound was determined from single-crystal X-ray diffraction data, space group P2_1/c with a = 16.315(4), b = 12.127(3), c = 11.430(2) Angstroms, β = 116.638(4) degrees, V = 2021.4(7) Angstroems"3, Z = 4, and R1 = 0.0313 for 4231 independent reflections. Two distinct neodymium polyhedra are formed, NdO_9 and NdO_8N, an oxygen of one monodentate oxalate in the former being replaced by a nitrogen atom of a coordinated hydrazinium ion in the latter. The infrared absorption band at 1005 cm"-"1 confirms the coordination of N_2H_5"+ to the metal. These polyhedra are connected through μ"2 and μ"3 oxalate ions to form an anionic three-dimensional neodymium-oxalate arrangement. A non-coordinated charge-compensating hydrazinium ion occupies, with water molecules, the resulting tunnels. The N-N stretching frequencies of the infrared spectra demonstrate the existence of the two types of hydrazine ions. Thermal reactivity of these hydrazinium oxalates and of the mixed isotypic Ce/Nd (CeNd-H_yO_x) oxalate were studied by using thermogravimetric and differential thermal analyses coupled with gas analyzers, and high temperature X-ray diffraction. Under air, fine particles of CeO_2 and Ce_0_._5Nd_0_._5O_1_._7_5 are formed at low temperature from Ce-H_yO_x and CeNd-H_yO_x, respectively, thanks to a decomposition/oxidation process. Under argon flow, dioxy-mono-cyanamides Ln_2O_2CN_2 are formed. (authors)

  15. Defect chemistry in CuGaS2 thin films: A photoluminescence study

    International Nuclear Information System (INIS)

    Botha, J.R.; Branch, M.S.; Berndt, P.R.; Leitch, A.W.R.; Weber, J.

    2007-01-01

    In this paper, the radiative recombination in CuGaS 2 thin films, deposited by metalorganic vapour phase epitaxy (MOVPE), is studied by photoluminescence (PL) spectroscopy. From PL studies of several series of layers grown under various growth conditions, a clear picture emerges of the radiative emission dominating for Cu-rich and Ga-rich layers. For near-stoichiometric layers, weak excitonic recombination at ∼ 2.48 eV and a donor-acceptor line at ∼ 2.4 eV are observed in the low temperature PL spectra. In Cu-rich layers, a donor-acceptor band at ∼ 2.18 eV dominates, while a band at ∼ 2.25 eV dominates for slightly Ga-rich material. For Ga-rich layers, deviations from the ideal Cu/Ga ratio of more than a few percent strongly quenches the emission above 2 eV in favour of a very broad band at ∼ 1.8 eV. The PL response is discussed within the context of fluctuating potentials in compensated material and compared to available reports in literature

  16. Ultrathin ZnO interfacial passivation layer for atomic layer deposited ZrO2 dielectric on the p-In0.2Ga0.8As substrate

    Science.gov (United States)

    Liu, Chen; Lü, Hongliang; Yang, Tong; Zhang, Yuming; Zhang, Yimen; Liu, Dong; Ma, Zhenqiang; Yu, Weijian; Guo, Lixin

    2018-06-01

    Interfacial and electrical properties were investigated on metal-oxidesemiconductor capacitors (MOSCAPs) fabricated with bilayer ZnO/ZrO2 films by atomic layer deposition (ALD) on p-In0.2Ga0.8As substrates. The ZnO passivated In0.2Ga0.8As MOSCAPs have exhibited significantly improved capacitance-voltage (C-V) characteristics with the suppressed "stretched out" effect, increased accumulation capacitance and reduced accumulation frequency dispersion as well as the lower gate leakage current. In addition, the interface trap density (Dit) estimated by the Terman method was decreased dramatically for ZnO passivated p-In0.2Ga0.8As. The inherent mechanism is attributed to the fact that an ultrathin ZnO IPL employed by ALD prior to ZrO2 dielectric deposition can effectively suppress the formation of defect-related low-k oxides and As-As dimers at the interface, thus effectively improving the interface quality by largely removing the border traps aligned near the valence band edge of the p-In0.2Ga0.8As substrate.

  17. Nano-sized quaternary CuGa2In3S8 as an efficient photocatalyst for solar hydrogen production

    KAUST Repository

    Kandiel, Tarek

    2014-09-03

    The synthesis of quaternary metal sulfide (QMS) nanocrystals is challenging because of the difficulty to control their stoichiometry and phase structure. Herein, quaternary CuGa2In3S8 photocatalysts with a primary particle size of ≈4nm are synthesized using a facile hot-injection method by fine-tuning the sulfur source injection temperature and aging time. Characterization of the samples reveals that quaternary CuGa2In3S8 nanocrystals exhibit n-type semiconductor characteristics with a transition band gap of ≈1.8eV. Their flatband potential is located at -0.56V versus the standard hydrogen electrode at pH6.0 and is shifted cathodically by 0.75V in solutions with pH values greater than 12.0. Under optimized conditions, the 1.0wt% Ru-loaded CuGa2In3S8 photocatalyst exhibits a photocatalytic H2 evolution response up to 700nm and an apparent quantum efficiency of (6.9±0.5)% at 560nm. These results indicate clearly that QMS nanocrystals have great potential as nano-photocatalysts for solar H2 production. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. In pursuit of the rhabdophane crystal structure: from the hydrated monoclinic LnPO{sub 4}.0.667H{sub 2}O to the hexagonal LnPO{sub 4} (Ln = Nd, Sm, Gd, Eu and Dy)

    Energy Technology Data Exchange (ETDEWEB)

    Mesbah, Adel, E-mail: adel.mesbah@cea.fr [ICSM, UMR 5257 CNRS – CEA – ENSCM – Université de Montpellier, Site de Marcoule - Bât 426, BP 17171, 30207 Bagnols/Cèze (France); Clavier, Nicolas [ICSM, UMR 5257 CNRS – CEA – ENSCM – Université de Montpellier, Site de Marcoule - Bât 426, BP 17171, 30207 Bagnols/Cèze (France); Elkaim, Erik [Synchrotron SOLEIL, L' Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette Cedex (France); Szenknect, Stéphanie; Dacheux, Nicolas [ICSM, UMR 5257 CNRS – CEA – ENSCM – Université de Montpellier, Site de Marcoule - Bât 426, BP 17171, 30207 Bagnols/Cèze (France)

    2017-05-15

    The dehydration process of the hydrated rhabdophane LnPO{sub 4}.0.667H{sub 2}O (Ln = La to Dy) was thoroughly studied over the combination of in situ high resolution synchrotron powder diffraction and TGA experiments. In the case of SmPO{sub 4}.0.667H{sub 2}O (monoclinic, C2), a first dehydration step was identified around 80 °C leading to the formation of SmPO{sub 4}.0.5H{sub 2}O (Monoclinic, C2) with Z =12 and a =17.6264(1) Å, b =6.9704(1) Å, c =12.1141(1) Å, β=133.74(1) °, V =1075.33(1) Å{sup 3}. In agreement with the TGA and dilatometry experiments, all the water molecules were evacuated above 220 °C yielding to the anhydrous form, which crystallizes in the hexagonal P3{sub 1}21 space group with a =7.0389(1) Å, c =6.3702(1) Å and V =273.34(1) Å{sup 3}. This study was extended to selected LnPO{sub 4}.0.667H{sub 2}O samples (Ln= Nd, Gd, Eu, Dy) and the obtained results confirmed the existence of two dehydration steps before the stabilization of the anhydrous form, with the transitory formation of LnPO{sub 4}.0.5H{sub 2}O. - Graphical abstract: The dehydration process of the rhabdophane SmPO{sub 4}.0.667H{sub 2}O was studied over combination of in situ high resolution synchrotron powder diffraction and TGA techniques, a first dehydration was identified around 80 °C leading to the formation of SmPO{sub 4}.0.5H{sub 2}O (Monoclinic, C2). Then above 220 °C, the anhydrous form of the rhabdophane SmPO{sub 4} was stabilized and crystallizes in the hexagonal P3{sub 1}21 space group. - Highlights: • In situ synchrotron powder diffraction was carried out during the dehydration of the rhabdopahe LnPO{sub 4}.0.667H{sub 2}O. • The heat of the rhabdophane LnPO{sub 4}.0.667H{sub 2}O leads to LnPO{sub 4}.0.5H{sub 2}O then to anhydrous rhabdophane LnPO{sub 4}. • LnPO{sub 4}.0.5H{sub 2}O (monoclinic, C2) and LnPO{sub 4} (Hexagonal, P3{sub 1}21) were solved over the use of direct methods.

  19. Coordination polyhedra LnFn (Ln=La-Lu) in crystal structure

    International Nuclear Information System (INIS)

    Vologzhanina, A.V.; Pushkin, D.V.; Serezhkin, V.N.

    2006-01-01

    Peculiarities of stereochemistry of lanthanides (Ln) surrounded by fluorine atoms were studied by means of the Voronoi-Dirichlet polyhedra (PVD) and method of crossing spheres, 118 compounds are presented in the structure. It has been found that coordination numbers (CN) of Ln atoms change from 6 to 12, nine types of LnF n coordination polyhedra are formed in the process, Ln-F bond lengths have changes by 0.2-0.7 A in accordance to CN. It is found that in spite of significant variation of bond lengths volume of PVD Ln atoms is determined by their nature and oxidation state. It has been found that the change in radii of spherical domains, which volume is equal to the volume of PVD Ln atoms, is accompanied by tetrad-effect [ru

  20. Magnetic properties and structural transitions of fluorite-related rare earth osmates Ln3OsO7 (Ln=Pr, Tb)

    Science.gov (United States)

    Hinatsu, Yukio; Doi, Yoshihiro

    2013-02-01

    Ternary rare-earth osmates Ln3OsO7 (Ln=Pr, Tb) have been prepared. They crystallize in an ortho-rhombic superstructure of cubic fluorite with space group Cmcm. Both of these compounds undergo a structural phase transition at 130 K (Ln=Pr) and 580 K (Ln=Tb). These compounds show complex magnetic behavior at low temperatures. Pr3OsO7 exhibits magnetic transitions at 8 and 73 K, and Tb3OsO7 magnetically orders at 8 and 60 K. The Os moments become one-dimensionally ordered, and when the temperature is furthermore decreased, it provokes the ordering in the Ln3+ sublattice that simultaneously becomes three-dimensionally ordered with the Os sublattice.

  1. Family of defect-dicubane Ni4Ln2 (Ln = Gd, Tb, Dy, Ho) and Ni4Y2 complexes: rare Tb(III) and Ho(III) examples showing SMM behavior.

    Science.gov (United States)

    Zhao, Lang; Wu, Jianfeng; Ke, Hongshan; Tang, Jinkui

    2014-04-07

    Reactions of Ln(III) perchlorate (Ln = Gd, Tb, Dy, and Ho), NiCl2·6H2O, and a polydentate Schiff base resulted in the assembly of novel isostructural hexanuclear Ni4Ln2 complexes [Ln = Gd (1), Tb (2), Dy (3), Ho (4)] with an unprecedented 3d-4f metal topology consisting of two defect-dicubane units. The corresponding Ni4Y2 (5) complex containing diamagnetic Y(III) atoms was also isolated to assist the magnetic studies. Interestingly, complexes 2 and 3 exhibit SMM characteristics and 4 shows slow relaxation of the magnetization. The absence of frequency-dependent in-phase and out-of-phase signals for the Ni-Y species suggests that the Ln ions' contribution to the slow relaxation must be effectual as previously observed in other Ni-Dy samples. However, the observation of χ″ signals with zero dc field for the Ni-Tb and Ni-Ho derivatives is notable. Indeed, this is the first time that such a behavior is observed in the Ni-Tb and Ni-Ho complexes.

  2. Synthesis and Structures of Two Lanthanide Complexes Containing a Mixed Ligand System: [Ln(Phen){sub 2}(L){sub 3}(HL)]·H{sub 2}O [Ln = La, Ce; Phen = Phenanthroline; HL = Salicylic Acid

    Energy Technology Data Exchange (ETDEWEB)

    Iravani, Effat [UNiv. of Applied Science and Technology, Tehran (Iran, Islamic Republic of); Nami, Navabeh; Nabizadeh, Fatemeh; Bayani, Elham [Islamic Azad Univ., Mazandaran (Iran, Islamic Republic of); Neumueller, Bernhard [Philipps-Universitat Marburg, Marburg (Germany)

    2013-11-15

    The reaction of LnCl{sub 3}·7H{sub 2}O [Ln = La (1), Ce (2)] with salicylic acid (HL) and 1,10-phenanthroline (Phen) at 20 .deg. C in H{sub 2}O/ethanol gave after work-up and recrystallization two novel lanthanide complexes with general formula [Ln(Phen){sub 2}(L){sub 3}(HL)]·H{sub 2}O. Compounds 1 and 2 were characterized by IR and UV-Vis spectroscopy, TGA, CHN as well as by X-ray analysis. According to these results, compounds 1 and 2 are isostructural and contain Ln{sup 3+} ions with coordination number nine. Complexes 1 and 2 consist of two Phen, one neutral HL and three L anions (two L anions act as monodentate ligands and the third one is chelating to Ln{sup 3+}). Thermal decomposition led to primary loss of the Phen molecules. Then HL molecules and finally L moieties left the material to give Ln{sub 2}O{sub 3}.

  3. Tricolor emission Ca3Si2O7:Ln (Ln=Ce, Tb, Eu) phosphors for near-UV white light-emitting-diode

    International Nuclear Information System (INIS)

    Mao, Zhi-yong; Zhu, Ying-chun; Gan, Lin; Zeng, Yi; Xu, Fang-fang; Wang, Yang; Tian, Hua; Li, Jian; Wang, Da-jian

    2013-01-01

    Tricolor emission in a same Ca 3 Si 2 O 7 host with independent Ln (Ln=Ce 3+ , Eu 2+ , Tb 3+ ) dopants is demonstrated to construct a near-UV white light emitting diode (LED). The luminescence properties and thermal quenching properties, as well as the applications in near-UV white LED are investigated. These phosphors show typical blue, red, and green, three-basal-color, luminescence in the CIE chromaticity diagram for Ce 3+ , Eu 2+ and Tb 3+ dopants, respectively. Thermal quenching properties show that the luminescence thermal stability strongly depends on the different dopant types; better thermal quenching property of Ce 3+ and Tb 3+ is recorded in comparison with that of Eu 2+ . The white LED prototype fabricated with near-UV chip and as-prepared tricolor phosphors exhibits acceptable CIE chromaticity coordinates (0.32, 0.30) with a CCT of 6000 K and a CRI of 87, indicating the potential application of Ca 3 Si 2 O 7 :Ln phosphors in near-UV white LED. - Highlights: ► Tricolor Ca 3 Si 2 O 7 : Ln phosphors were demonstrated to construct near-UV white LED. ► Eu 2+ doped Ca 3 Si 2 O 7 red-emitting phosphor was confirmed by this work once again. ► Thermal quenching properties for Ca 3 Si 2 O 7 :Ln phosphors were reported for the first time. ► Performances of fabricated white LED indicated the potential application of phosphors.

  4. Studies on the Ln/sub 2/O/sub 3/ (Ln: rare-earth elements)-SrO-V/sub 2/O/sub 3/ system, 2. Some physical properties for Ln sub(1-x)Sr sub(x)VO sub(3-0. 1x) and SrO. Ln sub(1-x)Sr sub(x)VO sub(3-0. 1x) (Ln: Nd or Eu)

    Energy Technology Data Exchange (ETDEWEB)

    Shin-ike, T [Osaka Dental Coll., Hirakata (Japan); Adachi, G; Shiokawa, J

    1981-01-01

    Electrical and magnetic properties of the perovskite type solid solutions, Ln sub(1-x)Sr sub(x)VO sub(3-0.1x) (Ln: Nd or Eu), and the K/sub 2/NiF/sub 4/ type solid solutions, SrO.Ln sub(1-x)Sr sub(x)VO sub(3-0.1x) (Ln: Nd or Eu), were studied in the temperature range 77 - 300 K. The electrical conductivity increased with x for the perovskite type solid solutions and the reverse behavior was observed for the K/sub 2/NiF/sub 4/ type compounds. All the solid solutions examined exhibited a metal-insulator transition at some values of x. Both Nd sub(1-x)Sr sub(x)VO sub(3-0.1x) and Eu sub(1-x)Sr sub(x)VO sub(3-0.1x) were antiferromagnets having a weak ferromagnetism at a low value of x at a low temperature. The K/sub 2/NiF/sub 4/ type solid solutions revealed a weak ferromagnetism at a high value of x at a low temperature.

  5. Performance of Series Connected GaAs Photovoltaic Converters under Multimode Optical Fiber Illumination

    Directory of Open Access Journals (Sweden)

    Tiqiang Shan

    2014-01-01

    Full Text Available In many military and industrial applications, GaAs photovoltaic (PV converters are connected in series in order to generate the required voltage compatible with most common electronics. Multimode optical fibers are usually used to carry high-intensity laser and illuminate the series connected GaAs PV converters in real time. However, multimode optical fiber illumination has a speckled intensity pattern. The series connected PV array is extremely sensitive to nonuniform illumination; its performance is limited severely by the converter that is illuminated the least. This paper quantifies the effects of multimode optical fiber illumination on the performance of series connected GaAs PV converters, analyzes the loss mechanisms due to speckles, and discusses the maximum illumination efficiency. In order to describe the illumination dependent behavior detailedly, modeling of the series connected PV array is accomplished based on the equivalent circuit for PV cells. Finally, a series of experiments are carried out to demonstrate the theory analysis.

  6. AgLnSb/sub 2/O/sub 7/ compounds with weberite structure

    Energy Technology Data Exchange (ETDEWEB)

    Lopatin, S S; Aver' yanova, L N; Belyaev, I N; Zvyagintsev, B I; Dyatlov, Eh V [Rostovskij-na-Donu Gosudarstvennyj Univ. (USSR)

    1982-11-01

    The interaction between AgSbO/sub 3/ and LnSbO/sub 4/ in the solid phase at 1100-1150 deg C has been investigated. AgLnSb/sub 2/O/sub 7/ compounds with weberite crystal structure are formed in Ln=La, Pr, Nd, Sm cases but in Ln=Eu, Cd, Dy, Er cases the formation of termary oxides of the indicated composition has not been observed. Inasmuch as compounds of the general formula A/sub 2/B/sub 2/O/sub 7/ with average cation radii Rsub(B) >0.60 A and 1.65 <= Rsub(A)/Rsub(B) <= 2.20 can crystallize in weberite, pyrochlore and laminated perovskite-like structurer, conditions of the existence of the above mentioned structures depending on A and B dimensions and electronegativity are discussed.

  7. A method for the estimation of the enthalpy of formation of mixed oxides in Al2O3-Ln2O3 systems

    International Nuclear Information System (INIS)

    Vonka, P.; Leitner, J.

    2009-01-01

    A new method is proposed for the estimation of the enthalpy of formation (Δ ox H) of various Al 2 O 3 -Ln 2 O 3 mixed oxides from the constituent binary oxides. Our method is based on Pauling's concept of electronegativity and, in particular, on the relation between the enthalpy of formation of a binary oxide and the difference between the electronegativities of the oxide-forming element and oxygen. This relation is extended to mixed oxides with a simple formula given for the calculation of Δ ox H. The parameters of this equation were fitted using published experimental values of Δ ox H derived from high-temperature oxide melt solution calorimetry. Using our proposed method, we obtained a standard deviation (σ) of 4.87 kJ mol -1 for this data set. Taking into account regularities within the lanthanide series, we then estimated the Δ ox H values for Al 2 O 3 -Ln 2 O 3 mixed oxides. The values estimated using our method were compared with those obtained by Aronson's and Zhuang's empirical methods, both of which give significantly poorer results. - Graphical abstract: Enthalpy of formation of Ln-Al-O oxides from the constituent binary ones.

  8. Investigations on highly stable thermal characteristics of a dilute In0.2Ga0.8AsSb/GaAs doped-channel field-effect transistor

    International Nuclear Information System (INIS)

    Su, Ke-Hua; Hsu, Wei-Chou; Hu, Po-Jung; Lee, Ching-Sung; Wu, Yue-Han; Chang, Li; Hsiao, Ru-Shang; Chen, Jenn-Fang; Chi, Tung-Wei

    2008-01-01

    This work reports for the first time a novel In 0.2 Ga 0.8 AsSb/GaAs heterostructure doped-channel field-effect transistor (DCFET) grown by the molecular beam epitaxy system. The interfacial quality within the InGaAsSb/GaAs quantum well of the DCFET device has been effectively improved by introducing surfactant-like Sb atoms during the growth of the Si-doped InGaAs channel layer. The improved device characteristics include the peak extrinsic transconductance (g m,max ) of 161.5 mS mm −1 , the peak drain–source saturation current density (I DSS,max ) of 230 mA mm −1 , the gate–voltage swing (GVS) of 1.65 V, the cutoff frequency (f T ) of 12.5 GHz and the maximum oscillation frequency (f max ) of 25 GHz at 300 K with the gate dimensions of 1.2 × 200 µm 2 . The proposed design has also shown a stable thermal threshold coefficient (∂V th /∂T) of −0.7 mV K −1

  9. 67Ga scanning and upper gastrointestinal series for gastric lymphomas

    International Nuclear Information System (INIS)

    Ichiya, Y.; Oshiumi, Y.; Kamoi, I.; Imoto, T.; Shimoda, Y.; Kitagawa, S.; Matsuura, K.

    1982-01-01

    67 Ga scanning and upper gastrointestinal (UGI) series were performed in 13 patients with gastric lymphomas before any treatment was initiated. Seven of these patients also underwent both examinations after completing chemotherapy and/or radiation therapy. Prior to treatment, all 13 patients had abnormalities on the UGI examination, and 12 of them had abnormalities on the 67 Ga scans. In 6 patients, more extensive gastric abnormalities were demonstrated by 67 Ga scanning than by UGI examination. Although persistent 67 Ga uptake after treatment was indicative of relatively poor therapeutic response, lack of uptake did not always indicate a good response to treatment

  10. Crystal structures of [Ln(NO33(μ2-bpydo2], where Ln = Ce, Pr or Nd, and bpydo = 4,4′-bipyridine N,N′-dioxide: layered coordination networks containing 44 grids

    Directory of Open Access Journals (Sweden)

    Michael L. Stromyer

    2016-01-01

    Full Text Available Three isostructural coordination networks of Ce, Pr, and Nd nitrate with 4,4′-bipyridine N,N′-dioxide (bpydo are reported, namely poly[[tris(nitrato-κ2O,O′cerium(III]-bis(μ2-4,4′-bipyridine N,N′-dioxide-κ2N:N′], [Ce(NO33(C10H8N2O22], poly[[tris(nitrato-κ2O,O′praeseodymium(III]-bis(μ2-4,4′-bipyridine N,N′-dioxide-κ2N:N′], [Pr(NO33(C10H8N2O22], and poly[[tris(nitrato-κ2O,O′neodymium(III]-bis(μ2-4,4′-bipyridine N,N′-dioxide-κ2N:N′], [Nd(NO33(C10H8N2O22]. All three compounds are isostructural to the previously reported La analogue. The asymmetric unit of [Ln(NO33(μ2-bpydo2] contains one lanthanide cation, two bpydo ligands, and three nitrate anions. Both bpydo ligands act as end-to-end μ2-bridges and display nearly ideal cis and gauche conformations, respectively. The bpydo ligands link the ten-coordinate LnIII cations, forming interdigitating 44 grid-like layers extending parallel to (-101, where interdigitation of layers is promoted by C—H...O interactions between nitrate anions and bpydo ligands. The interdigitated layers are linked to sets of neighboring layers via further C—H...O and π–π interactions.

  11. Effects of the TiO2 high-k insulator material on the electrical characteristics of GaAs based Schottky barrier diodes

    Science.gov (United States)

    Zellag, S.; Dehimi, L.; Asar, T.; Saadoune, A.; Fritah, A.; Özçelik, S.

    2018-01-01

    The effects of the TiO2 high-k insulator material on Au/n-GaAs/Ti/Au Schottky barrier diodes have been studied by means of the numerical simulation and experimental results at room temperature. The Atlas-Silvaco-TCAD numerical simulator has been used to explain the behavior of different physical phenomena of Schottky diode. The experimental values of ideality factor, barrier height, and series resistance have been determined by using the various techniques such as Cheung's method, forward bias ln I- V and reverse capacitance-voltage behaviors. The experimental ideality factor and barrier height values have been found to be 4.14 and 0.585 eV for Au/n-GaAs/Ti/Au Schottky barrier diode and 4.00 and 0.548 eV for that structure with 16 nm thick TiO2 film and 3.92, 0.556 eV with 100 nm thick TiO2 film. The diodes show a non-ideal current-voltage behavior that of the ideality factor so far from unity. The extraction of N ss interface distribution profile as a function of E c -E ss is made using forward-bias I- V measurement by considering the bias dependence of ideality factor, the effective barrier height, and series resistance for Schottky barrier diodes. The N ss calculated values with consideration of the series resistance are lower than the calculated ones without series resistance. The current-voltage results of diodes reveal an abnormal increase in leakage current with an increase in thickness of high-k interfacial insulator layer. However, the simulation agrees in general with the experimental results.

  12. Synthesis, structures, and luminescent properties of sodium rare-earth metal(III) chloride oxotellurates(IV), Na{sub 2}Ln{sub 3}Cl{sub 3}[TeO{sub 3}]{sub 4} (Ln = Sm, Eu, Gd, Tb, Dy, and Ho)

    Energy Technology Data Exchange (ETDEWEB)

    Charkin, Dmitri O.; Dorofeev, Sergey G.; Berdonosov, Peter S.; Dolgikh, Valery A. [Department of Chemistry, Lomonosov Moscow State University (Russian Federation); Zitzer, Sabine; Greiner, Stefan; Schleid, Thomas [Institut fuer Anorganische Chemie, Universitaet Stuttgart (Germany); Olenev, Andrei V. [Department of Chemistry, Lomonosov Moscow State University (Russian Federation); Sine Theta Ltd., Moscow (Russian Federation)

    2017-11-17

    Six sodium rare-earth metal(III) chloride oxotellurates(IV), Na{sub 2}Ln{sub 3}Cl{sub 3}[TeO{sub 3}]{sub 4}, isostructural to Na{sub 2}Y{sub 3}Cl{sub 3}[TeO{sub 3}]{sub 4}, were synthesized by flux techniques and characterized by single-crystal XRD. The compounds crystallize in the monoclinic space group C2/c with lattice constants a = 23.967(1), b = 5.6342(3), c = 16.952(1) Aa, β = 134.456(5) for Ln = Sm, a = 23.932(2), b = 5.6044(5), c = 17.134(1) Aa, β = 135.151(6) for Ln = Eu, a = 23.928(1), b = 5.5928(1), c = 17.1133(8) Aa, β = 135.366(3) for Ln = Gd, a = 23.907(1), b = 5.569(3), c = 16.745(1) Aa, β = 134.205(3) for Ln = Tb, a = 23.870(1), b = 5.547(3), c = 16.665(1) Aa, β = 134.102(3) for Ln = Dy, and a = 23.814(1), b = 5.526(3), c = 16.626(1) Aa, β = 134.016(3) for Ln = Ho and Z = 4. Their crystal structure can be considered as a framework built of intergrowing Ln-O and Na-(O,Cl) slabs with channel walls decorated by tellurium atoms of [TeO{sub 3}]{sup 2-} groups. The luminescent properties of the new compounds due to the Ln{sup 3+} cations are described and discussed. We also discuss the crystal chemistry of various alkali-metal rare-earth metal(III) halide oxochalcogenates(IV). (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Facile in-situ reduction: Crystal growth and magnetic studies of reduced vanadium (III/IV) silicates CaxLn1-xVSiO5 (Ln = Ce-Nd, Sm-Lu, Y)

    Science.gov (United States)

    Abeysinghe, Dileka; Smith, Mark D.; Morrison, Gregory; Yeon, Jeongho; zur Loye, Hans-Conrad

    2018-04-01

    A series of lanthanide containing mixed-valent vanadium (III/IV) silicates of the type CaxLn1-xVSiO5 (Ln = Ce-Nd, Sm-Lu, Y) was synthesized as high quality single crystals from a molten chloride eutectic flux, BaCl2/NaCl. Utilizing Ca metal as the reducing agent, an in-situ reduction of V5+ to V3+/4+ as well as of Ce4+ to Ce3+ was achieved. The structures of 14 reported isostructural compounds were determined by single crystal X-ray diffraction. They crystallize in the tilasite (CaMgAsO4F) structure type in the monoclinic space group C2/c. The extended structure contains 1D chains of VO6 octahedra that are connected to each other via SiO4 groups and (Ca/Ln)O7 polyhedra. The magnetic susceptibility and the field dependent magnetization data were measured for CaxLn1-xVSiO5 (Ln = Ce-Nd, Sm, Gd-Lu, Y), and support the existence of antiferromagnetic behavior at low temperatures.

  14. Utility of Lithium in Rare-Earth Metal Reduction Reactions to Form Nontraditional Ln2+ Complexes and Unusual [Li(2.2.2-cryptand)]1+ Cations.

    Science.gov (United States)

    Huh, Daniel N; Darago, Lucy E; Ziller, Joseph W; Evans, William J

    2018-02-19

    The utility of lithium compared to other alkali metals in generating Ln 2+ rare-earth metal complexes via reduction of Ln 3+ precursors in reactions abbreviated as LnA 3 /M (Ln = rare-earth metal; A = anionic ligand; M = alkali metal) is described. Lithium reduction of Cp' 3 Ln (Cp' = C 5 H 4 SiMe 3 ; Ln = Y, Tb, Dy, Ho) under Ar in the presence of 2.2.2-cryptand (crypt) forms new examples of crystallographically characterizable Ln 2+ complexes of these metals, [Li(crypt)][Cp' 3 Ln]. In each complex, lithium is found in an N 2 O 4 donor atom coordination geometry that is unusual for the cryptand ligand. Magnetic susceptibility data on these new examples of nontraditional divalent lanthanide complexes are consistent with 4f n 5d 1 electronic configurations. The Dy and Ho complexes have exceptionally high single-ion magnetic moments, 11.35 and 11.67 μ B , respectively. Lithium reduction of Cp' 3 Y under N 2 at -35 °C forms the Y 2+ complex (Cp' 3 Y) 1- , which reduces dinitrogen upon warming to room temperature to generate the (N 2 ) 2- complex [Cp' 2 Y(THF)] 2 (μ-η 22 -N 2 ). These results provide insight on the factors that lead to reduced dinitrogen complexes and/or stable divalent lanthanide complexes as a function of the specific reducing agent and conditions.

  15. The system analysis of temperature and melting enthalpy of intermetallic compounds of antimony-lanthanoids system of Sb Ln, Sb2Ln composition

    International Nuclear Information System (INIS)

    Badalova, M.A.; Chamanova, M.; Dodkhoev, E.S.; Badalov, A.; Abdusalyamova, M.N.

    2015-01-01

    Present article is devoted to system analysis of temperature and melting enthalpy of intermetallic compounds of antimony-lanthanoids system of Sb Ln, Sb 2 Ln composition. The melting enthalpy was estimated. The temperature value was determined.

  16. Electronic properties of GaV4S8: A percolation approach

    Indian Academy of Sciences (India)

    This statement is strongly supported by the calculated band- width per cluster in GaV4S8 .... site in GaV4S8 are the same because of the identical chemical composition. 3.2 Resistivity. The resistivity of .... One of the authors (S Hansda) acknowledges UGC, New Delhi, India for the financial support through Rajiv Gandhi ...

  17. Low-temperature current-voltage characteristics of MIS Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Biber, M

    2003-01-01

    The current-voltage (I-V) characteristics of metal-insulating layer-semiconductor Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky barrier diodes were determined in the temperature range 80-300 K. The evaluation of the experimental I-V data reveals a nonlinear increase of the zero-bias barrier height (qPHI{sub 0}) for the inhomogeneous Cu/n-GaAs Schottky barrier diodes and a linear increase of the zero-bias barrier height (qPHI{sub 0}) for Cu/n-GaAs Schottky barrier diodes with an interfacial layer. The ideality factor n decreases with increasing temperature for all diodes. Furthermore, the changes in PHI{sub 0} and n become quite significant below 150 K and the plot of ln(I{sub 0}/T{sup 2}) versus 1/T exhibits a non-linearity below 180 K for the inhomogeneous barrier diodes. Such behavior is attributed to barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the interface. The value of the Richardson constant was found to be 5.033 A/cm{sup 2} K{sup 2}, which is close to the theoretical value of 8.16 A/cm{sup 2} K{sup 2} used for the determination of the zero-bias barrier height.

  18. Upgradation in SCADA and PLC of existing LN_2 control system for SST-1

    International Nuclear Information System (INIS)

    Panchal, Pradip; Mahesuria, Gaurang; Panchal, Rohit; Patel, Rakesh; Sonara, Dashrath; Pitroda, Dipen; Nimavat, Hiren; Tanna, Vipul; Pradhan, Subrata

    2016-01-01

    Highlights: • The control system of LN_2 Management System of SST-1 is designed on PLC and SCADA. • The implementation and results of up-gradation in PLC and SCADA are reported. • The up-gradation in PLC and SCADA has improved the reliability & availability of SST-1 LN_2 system. - Abstract: Helium Refrigerator/Liquefier system of Steady State Superconducting Tokamak (SST-1) incorporates Liquid Nitrogen (LN_2) pre-cooling system. LN_2 is used for 80 K thermal shields of SST-1, current feeder system and integrated flow distribution and control system. The LN_2 management system is distributed system and requires automatic control. Initially LN_2 control system had Citect based Supervisory Control and Data Acquisition (SCADA) and Koyo make Programmable Logic Controller (PLC). With the passage of time and due to unavailability of their hardware, it is being obsoleted. So, the requirements of new PLC and SCADA systems have been envisaged to make uninterruptable operation of SST-1 cryogenic system. Therefore, Wonderware SCADA and Schneider Electric make PLC is programmed to replace Citect SCADA and Koyo PLC. New control features have been added in upgraded control system for better management of LN_2 system. This upgradation of SCADA and PLC is completed, tested successfully and in operation. Operational performance highlights of the new upgraded system are presented in this paper.

  19. Syntheses, crystal structures and photoluminescence properties of two rare-earth molybdates CsLn(MoO{sub 4}){sub 2} (Ln=Eu, Tb)

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Dan; Ma, Fa-Xue; Liu, Bao-Zhong; Fan, Yun-Chang; Han, Xue-Feng; Zhang, Lei; Nie, Cong-Kui [Henan Polytechnic Univ. (China). College of Chemistry and Chemical Engineering

    2018-04-01

    Single crystals of two cesium rare-earth molybdates CsLn(MoO{sub 4}){sub 2} (Ln=Eu, Tb) have been prepared using the high temperature molten salt (flux) method. Single-crystal X-ray diffraction analyses reveal that they crystallize in the orthorhombic space group Pccm (No. 49) and features a 2D layer structure that is composed of [Ln(MoO{sub 4}){sub 2}]{sub ∞} and [Cs]{sub ∞} layers. Under near-UV light excitation, emission spectrum of CsEu(MoO{sub 4}){sub 2} consists of several sharp lines due to the characteristic electronic transitions of Eu{sup 3+} ions, whereas CsTb(MoO{sub 4}){sub 2} exhibits characteristic green emission of Tb{sup 3+} ions.

  20. A series of new Eu/Tb mixed MOFs with tunable color luminescence

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Ximing; He, Xingxiang; Shi, Jie; Cui, Chenhui; Xu, Yan [College of Chemistry and Chemical Engineering, State Key Laboratory of Materials-Oriented Chemical Engineering, Nanjing Tech University, Nanjing (China)

    2018-01-17

    Two isostructural lanthanide metal-organic frameworks [Ln-MOFs, Ln = Tb (1), Eu (8)] containing oxalic acid ligand with green, red luminescence were solvothermally synthesized. A series of Eu/Tb mixed MOFs (2-7), (C{sub 5}H{sub 6}N){sub 2}[Eu{sub x}Tb{sub 2-x}(H{sub 2}O){sub 2}(C{sub 2}O{sub 4}){sub 4}].2H{sub 2}O, were designed and obtained, which displayed highly tunable luminescence color by adjusting the excitation wavelength. Complexes 1-8 were characterized by IR, elemental analysis, ICP, powder XRD, and TG measurements. The quantum yields of the complexes 1-8 range from 6.89 to 4.15 %, whereas the fluorescence lifetime of 1-8 varies between 1.12 and 0.87 ms. Therefore, with the increase of the molar ratio of Eu, the quantum yields and fluorescence lifetime of the complexes 1-8 gradually decrease. (copyright 2018 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Hydrothermal synthesis of 4ZnO·B2O3·H2O:Ln3 + (Ln = Eu, Tb) phosphors: Morphology-tunable and luminescence properties

    Science.gov (United States)

    Cao, Shiwei; Jiao, Yang; Han, Weifang; Ge, Chunhua; Song, Bo; Wang, Jie; Zhang, Xiangdong

    2018-02-01

    4ZnO·B2O3·H2O:Ln3 + (Ln = Eu, Tb) phosphors with different morphologies have been successfully synthesized via one-step hydrothermal method through regulating the molar amount of Eu3 + and Tb3 +. Comprehensive scanning electron microscopy (SEM), X-ray diffraction (XRD) Fourier transform infrared spectrum (FT-IR) and inductively coupled plasma atomic emission spectrometer (ICP-AES) characterizations all confirm that obtained products are 4ZnO·B2O3·H2O:Ln3 + (Ln = Eu, Tb). The experimental results displayed that the morphology and photoluminescence of compounds is regularly changed with increased the molar amount of rare earth ions. For the Eu3 +-doped, Tb3 +-doped and Eu3 +/Tb3 + co-doped 4ZnO·B2O3·H2O phosphors of morphologies, the rod-like structures gradually changed to flower-like structures, fine wire-like structure and hybrid structure, respectively. To their photoluminescence, the Eu3 + shows a red emission (615 nm); the Tb3 + shows a green emission (545 nm); for the Eu3 +/Tb3 + co-doped 4ZnO·B2O3·H2O phosphors, a combination of blue (5d-4f of Eu2 +), green (5D4-7F5 of Tb3 +) and red (5D0-7F2 of Eu3 +) emissions emerges to achieve white emission. In addition, the energy transfer among Eu3 +, Eu2 + and Tb3 + ions was also discussed.

  2. A new promising phosphor, Na3La2(BO3)3:Ln (Ln=Eu, Tb)

    International Nuclear Information System (INIS)

    Li Zhihua; Zeng Jinghui; Zhang Guochun; Li Yadong

    2005-01-01

    We present an efficient way to search a host for ultraviolet (UV) phosphor from UV nonlinear optical (NLO) materials. With the guidance, Na 3 La 2 (BO 3 ) 3 (NLBO), as a promising NLO material with a broad transparency range and high damage threshold, was adopted as a host material for the first time. The lanthanide ions (Tb 3+ and Eu 3+ )-doped NLBO phosphors have been synthesized by solid-state reaction. Luminescent properties of the Ln-doped (Ln=Tb 3+ , Eu 3+ ) sodium lanthanum borate were investigated under UV ray excitation. The emission spectrum was employed to probe the local environments of Eu 3+ ions in NLBO crystal. For red phosphor, NLBO:Eu, the measured dominating emission peak was at 613 nm, which is attributed to 5 D - 7 F 2 transition of Eu 3+ . The luminescence indicates that the local symmetry of Eu 3+ in NLBO crystal lattice has no inversion center. Optimum Eu 3+ concentration of NLBO:Eu 3+ under UV excitation with 395 nm wavelength is about 30 mol%. The green phosphor, NLBO:Tb, showed bright green emission at 543 with 252 nm excited light. The measured concentration quenching curve demonstrated that the maximum concentration of Tb 3+ in NLBO was about 20%. The luminescence mechanism of Ln-doped NLBO (Tb 3+ and Eu 3+ ) was analyzed. The relative high quenching concentration was also discussed

  3. LN2 Dewar 42 Delivery Overfill Inlet Solution

    Energy Technology Data Exchange (ETDEWEB)

    Wu, J.; Mulholland, G.T.; /Fermilab

    1991-02-26

    Pressure vessels must be protected against overpressure scenarios. A scenario of particular concern is that from a high pressure LN2 pump, now standard on LN2 delivery trailers. A safety mechanism must be in place to prevent the overfilling, and subsequent overpressure from occurring because these pumps have a higher mass flow output than reasonably sized relief valves provide. The original solution to the problem was to close a valve on the fill line when a certain liquid level in the dewar is reached. The valve remains closed until the level drops below that threshold. The trigger level was about 13,000 gallons for the 20,000 gallon capacity dewar. The solution was in place from 1989 until present, 2004.

  4. Vibrational spectra of mixed oxides of Ln2MgTiO6 composition

    International Nuclear Information System (INIS)

    Porotnikov, N.V.; German, M.; Kovba, L.M.

    1984-01-01

    In the range 33-4000 cm -1 IR and Raman spectra of complex oxides of the composition Ln 2 MgTiO 6 (Ln=La-Yb and Y) have been studied. Using the Magnesium isotope-substituted compositions Lasub(2)sup(24,26)MgTiOsub(6), Smsub(2)sup(24,26)MgTiOsub(6) and Ybsub(2)sup(24,26)MgTiOsub(6), it has been shoWn that in Ln 2 MgTiO 6 titanium and magnesium ions are located in sites With octahedral coordination, of rare earth ions highly-coordinated polyhedrons with coordination number 10-12 are characteristic

  5. β-Y(BO{sub 2}){sub 3}. A new member of the β-Ln(BO{sub 2}){sub 3} (Ln = Nd, Sm, Gd-Lu) structure family

    Energy Technology Data Exchange (ETDEWEB)

    Schmitt, Martin K.; Huppertz, Hubert [Innsbruck Univ. (Austria). Inst. fuer Allgemeine, Anorganische und Theoretische Chemie

    2017-07-01

    β-Y(BO{sub 2}){sub 3} was synthesized in a Walker-type multianvil module at 5.9 GPa/1000 C. The crystal structure has been elucidated through single-crystal X-ray diffraction. β-Y(BO{sub 2}){sub 3} crystallizes in the orthorhombic space group Pnma (no. 62) with the lattice parameters a = 15.886(2), b = 7.3860(6), and c = 12.2119(9) Aa. Its crystal structure will be discussed in the context of the isotypic lanthanide borates β-Ln(BO{sub 2}){sub 3} (Ln = Nd, Sm, Gd-Lu).

  6. Upgradation in SCADA and PLC of existing LN{sub 2} control system for SST-1

    Energy Technology Data Exchange (ETDEWEB)

    Panchal, Pradip, E-mail: pradip@ipr.res.in; Mahesuria, Gaurang; Panchal, Rohit; Patel, Rakesh; Sonara, Dashrath; Pitroda, Dipen; Nimavat, Hiren; Tanna, Vipul; Pradhan, Subrata

    2016-11-15

    Highlights: • The control system of LN{sub 2} Management System of SST-1 is designed on PLC and SCADA. • The implementation and results of up-gradation in PLC and SCADA are reported. • The up-gradation in PLC and SCADA has improved the reliability & availability of SST-1 LN{sub 2} system. - Abstract: Helium Refrigerator/Liquefier system of Steady State Superconducting Tokamak (SST-1) incorporates Liquid Nitrogen (LN{sub 2}) pre-cooling system. LN{sub 2} is used for 80 K thermal shields of SST-1, current feeder system and integrated flow distribution and control system. The LN{sub 2} management system is distributed system and requires automatic control. Initially LN{sub 2} control system had Citect based Supervisory Control and Data Acquisition (SCADA) and Koyo make Programmable Logic Controller (PLC). With the passage of time and due to unavailability of their hardware, it is being obsoleted. So, the requirements of new PLC and SCADA systems have been envisaged to make uninterruptable operation of SST-1 cryogenic system. Therefore, Wonderware SCADA and Schneider Electric make PLC is programmed to replace Citect SCADA and Koyo PLC. New control features have been added in upgraded control system for better management of LN{sub 2} system. This upgradation of SCADA and PLC is completed, tested successfully and in operation. Operational performance highlights of the new upgraded system are presented in this paper.

  7. Effect of the ion force on the stability constants of the complexes LnCl2+ and LnCl2+ of Europium and Lutetium

    International Nuclear Information System (INIS)

    Fernandez R, E.; Jimenez R, M.; Solache R, M.

    2004-01-01

    A study is presented on the determination of the constants of stability of those complex LnCI 3-n n (where Ln = Eu 3+ and Lu 3+ and n = 1 and 2), by means of a method of extraction with solvent, to constant temperature (303 K) and in means of high ionic force (1- 3M H CI/HCIO 4 ). It is also presented the application of the theory of the specific interaction of ions (SIT) of Bronsted-Guggenheim-Scatchard for the extrapolation of the values to infinite dilution. (Author)

  8. Structure, photo- and triboluminescence of the lanthanoid dibenzoylmethanates: HNEt3[Ln(dbm)4

    International Nuclear Information System (INIS)

    Akerboom, Sebastiaan; Meijer, Michael S.; Siegler, Maxime A.; Fu, Wen Tian; Bouwman, Elisabeth

    2014-01-01

    A series of lanthanoid coordination compounds with the general formula HNEt 3 [Ln(dbm) 4 ] (Ln=La, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb; dbm=dibenzoylmethanate) has been prepared and characterized. In addition, single crystals with Ln=La, Nd and Sm were obtained. Single crystal X-ray diffraction studies reveal that the compounds with Ln=La and Nd crystallize in the P2 1 /c space group, while the Sm-compound crystallizes in the Pc space group. Based on powder XRD data, the compounds with Ln=Eu–Yb can be described with a monoclinic cell. Photoluminescence studies indicate that compounds with Ln=Sm and Eu exhibit bright photoluminescence characteristic of the lanthanoid ion upon excitation in the near UV range. Furthermore, HNEt 3 [Sm(dbm) 4 ] has been identified as a novel triboluminescent compound. -- Highlights: • The compounds HNEt 3 [Ln(dbm) 4 ], Ln=La, Nd, Sm, Eu, Tb, Dy, Ho Er, Tm, and Yb, have been prepared and their photophysical properties have been studied. • Crystal structures of HNEt 3 [La(dbm) 4 ], HNEt 3 [Nd(dbm) 4 ] and HNEt 3 [Sm(dbm) 4 ] are reported for the first time. • A novel, brightly triboluminescent Sm compound is reported

  9. Corrections to O(α7(lnα)mc2) fine-structure splittings and O(α6(lnα)mc2) energy levels in helium

    International Nuclear Information System (INIS)

    Zhang, T.

    1996-01-01

    Fully relativistic formulas for the energy-level shifts arising from no-pair exchange diagrams of two transverse photons plus an arbitrary number of Coulomb photons are derived in closed form within the external potential Bethe-Salpeter formalism. O(α 7 (lnα)mc 2 ) corrections to the fine-structure splittings of helium are obtained and expressed in terms of expectation values of nonrelativistic operators. O(α 7 mc 2 ) operators from exchange diagrams are found in nonrelativistic approximation. O(α 6 m 2 c 2 /M) nucleus-electron operators contributing to the fine-structure splittings are derived. Nonrelativistic operators of O(α 6 mc 2 ) corrections to the triplet levels of helium are presented. Nonrelativistic operators of O(α 6 (lnα)mc 2 ) corrections to the helium singlet levels and to positronium S levels are derived. O(α 6 m 2 c 2 /M) hydrogen and O(α 6 mc 2 ) positronium P levels, and O(α 6 (lnα)mc 2 ) corrections of first order to positronium S levels, are calculated using the derived operators for helium, in agreement with those obtained previously by others, except for one term in corrections to positronium P levels. In addition, the O(α 6 mc 2 ) Dirac energies for hydrogenic non-S levels are exactly reproduced in a perturbative calculation. copyright 1996 The American Physical Society

  10. Chiral Silver-Lanthanide Metal-Organic Frameworks Comprised of One-Dimensional Triple Right-Handed Helical Chains Based on [Ln7(μ3-OH)8]13+ Clusters.

    Science.gov (United States)

    Guo, Yan; Zhang, Lijuan; Muhammad, Nadeem; Xu, Yan; Zhou, Yunshan; Tang, Fang; Yang, Shaowei

    2018-02-05

    Three new isostructural chiral silver-lanthanide heterometal-organic frameworks [Ag 3 Ln 7 (μ 3 -OH) 8 (bpdc) 6 (NO 3 ) 3 (H 2 O) 6 ](NO 3 )·2H 2 O [Ln = Eu (1), Tb (2, Sm (3); H 2 bpdc = 2,2'-bipyridine-3,3'-dicarboxylic acid] based on heptanuclear lanthanide clusters [Ln 7 (μ 3 -OH) 8 ] 13+ comprised of one-dimensional triple right-handed helical chains were hydrothermally synthesized. Various means such as UV-vis spectroscopy, IR spectroscopy, elemental analysis, powder X-ray diffraction, and thermogravimetric/differential thermal analysis were used to characterize the compounds, wherein compound 3 was crystallographically characterized. In the structure of compound 3, eight μ 3 -OH - groups link seven Sm 3+ ions, forming a heptanuclear cluster, [Sm 7 (μ 3 -OH) 8 ] 13+ , and the adjacent [Sm 7 (μ 3 -OH) 8 ] 13+ clusters are linked by the carboxylic groups of bpdc 2- ligands, leading to the formation of a one-dimensional triple right-handed helical chain. The adjacent triple right-handed helical chains are further joined together by coordinating the pyridyl N atoms of the bpdc 2- ligands with Ag + , resulting in a chiral three-dimensional silver(I)-lanthanide(III) heterometal-organic framework with one-dimensional channels wherein NO 3 - anions and crystal lattice H 2 O molecules are trapped. The compounds were studied systematically with respect to their photoluminescence properties and energy-transfer mechanism, and it was found that H 2 bpdc (the energy level for the triplet states of the ligand H 2 bpdc is 21505 cm -1 ) can sensitize Eu 3+ luminescence more effectively than Tb 3+ and Sm 3+ luminescence because of effective energy transfer from bpdc 2- to Eu 3+ under excitation in compound 1.

  11. Chemical and structural changes in Ln{sub 2}NiO{sub 4+δ} (Ln=La, Pr or Nd) lanthanide nickelates as a function of oxygen partial pressure at high temperature

    Energy Technology Data Exchange (ETDEWEB)

    Flura, Aurélien; Dru, Sophie; Nicollet, Clément; Vibhu, Vaibhav; Fourcade, Sébastien; Lebraud, Eric; Rougier, Aline; Bassat, Jean-Marc; Grenier, Jean-Claude, E-mail: grenier@icmcb-bordeaux.cnrs.fr

    2015-08-15

    The chemical stability of lanthanide nickelates Ln{sub 2}NiO{sub 4+δ} (Ln=La, Pr or Nd) has been studied in the temperature range 25–1300 °C, either in air or at low pO{sub 2} (down to 10{sup −4} atm). Thermal gravimetry analysis (TGA) measurements coupled with X-ray diffraction (XRD) characterization have shown that all compounds retain their K{sub 2}NiF{sub 4}-type structure in these conditions, while remaining over-stoichiometric in oxygen up to 1000 °C. Only Nd{sub 2}NiO{sub 4+δ} starts to decompose into Nd{sub 2}O{sub 3} and NiO above 1000 °C, at pO{sub 2}=10{sup −4} atm. In addition, a careful analysis of the lanthanide nickelates structural features has been performed by in situ XRD, as a function of temperature and pO{sub 2}. For all compounds, a structural transition has been always observed in the temperature range 200–400 °C, in air or at pO{sub 2}=10{sup −4} atm. In addition, their cell volume did not vary upon the variation of the oxygen partial pressure. Therefore, these materials do not exhibit a chemical expansion in these conditions, which is beneficial for a fuel cell application as cathode layers. Additional dilatometry measurements have revealed that a temperature as high as 950 °C for Pr{sub 2}NiO{sub 4+δ} or 1100 °C for La{sub 2}NiO{sub 4+δ} and Nd{sub 2}NiO{sub 4+δ} has to be reached in order to begin the sintering of the material particles, which is of primary importance to obtain an efficient electronic/ionic conduction in the corresponding designed cathode layers. Besides, excellent matching was found between the thermal expansion coefficients of lanthanide nickelates and SOFC electrolytes such as 8wt% yttria stabilized zirconia (8YSZ) or Ce{sub 0.8}Gd{sub 0.2}O{sub 2−δ} (GDC), at least from 400 °C up to 1400 °C in air or up to 1200 °C at pO{sub 2}=10{sup −4} atm. - Graphical abstract: This study reports the good chemical stability of oxygen overstoichiometric Ln2NiO4+δ(Ln = La, Pr or Nd) at high temperatures

  12. Oxygen and minority carrier lifetimes in N-and P-type AL0.2GA0.8AS grown by metal organics vapor phase epitaxy

    International Nuclear Information System (INIS)

    Zahraman, Khaled; Leroux, M.; Gibart, P.; Zaidi, M.A.; Bremond, G.; Guillot, G.

    2000-01-01

    author.The minority carrier lifetimes in Al x Ga 1-x As grown by Metal-Organics Vapor Phase Epitaxy (MOVPE) is generally lower than in GaAs. This is believed to be due to oxygen incorporation in the layers. We describe a study of radiative and non radiative minority carriers lifetimes in n-and p-type Al 0.2 Ga 0.8 As as a function of growth parameters, in correlation with oxygen concentration measurements and deep level transient spectroscopy (DLTS) studies. Long non radiative lifetimes and low oxygen contents are achieved using temperature growth. A main minority hole lifetime killer appears to be 0.4 eV deep O related electron trap detected by DLTS at concentrations three orders of magnitude lower than the atomic oxygen one. Record lifetimes in MOVPE grown n-and p-type Al 0.2 Ga 0.8 As are obtained. An Al 0.85 Ga 0.15 As/Al 0.2 Ga 0.8 As surface recombination velocity lower than 4.5x10 3 cm.s -1 is measured

  13. The possibility of the mixed valence state in the uranium intermetallic compounds: UCoGa5, U2Ru2Sn and U2RuGa8

    International Nuclear Information System (INIS)

    Troc, Robert

    2007-01-01

    The mixed valence (MV) phenomenon has been observed so far in a large number of various compounds but containing only lanthanides. These properties are usually associated with the mixing of the localised f-state and the band states. The usual valence state for magnetic uranium intermetallics is the trivalent state 5f 3 or hybridised 5f 2 6d 1 , both are nearly degenerate in energy and can compete for a stability of the compound. In some cases a gain in an energy minimum may be achieved by very fast fluctuating between these two states with a time of 10 -14 s, which does not allow to yield the ordered state even if the exchange interactions (favourite the U-U distances) would be able for that. The latter cases seem to concern the described here intermetallics: one ternary compound based on Co, UCoGa 5 , and the two uranium ternary compounds based on Ru, namely U 2 Ru 2 Sn and U 2 RuGa 8 which all crystallize in a tetragonal unit cell. All these compounds show a maximum in their temperature dependences of the magnetic susceptibility measured along and perpendicular to the c-axis. Such a behaviour, which is reminiscent of a number of Ce (Sm, Eu) and Yb compounds for which χ(T) has in the past been considered by Sales and Wohlleben (SW) by applying their ICF model or by Lawrance et al. following their scaling procedure. It turned out that these phenomenological models can also be applied to the considered here two Ru-based uranium ternaries from which some reliable energy parameters could be found. In order to further support the mixing valence scenario for the first such cases in uranium compounds presented here, the transport and thermodynamic properties are also discussed. However, some of the most important results confirming the MV state, e.g., in U 2 RuGa 8 , has recently been achieved from the inelastic neutron scattering performed in the Rutherford Appleton Laboratory on the ISIS facility. From these measurements a characteristic gap of 60 meV has been

  14. Small-x behavior of the structure function F2 and its slope ∂lnF2/∂ln(1/x) for ''frozen'' and analytic strong-coupling constants

    International Nuclear Information System (INIS)

    Cvetic, G.; Kniehl, B.A.; Kotikov, A.V.

    2009-06-01

    Using the leading-twist approximation of the Wilson operator product expansion with ''frozen'' and analytic versions of the strong-coupling constant, we show that the Bessel-inspired behavior of the structure function F 2 and its slope ∂lnF 2 /∂ln(1/x) at small values of x, obtained for a at initial condition in the DGLAP evolution equations, leads to good agreement with experimental data of deep-inelastic scattering at DESY HERA. (orig.)

  15. Series of chiral interpenetrating 3d-4f heterometallic MOFs: Luminescent sensors and magnetic properties

    Science.gov (United States)

    Zhang, Xiaolei; Chen, Chen; Liu, Xiaoli; Gao, Peng; Hu, Ming

    2017-09-01

    Series of chiral 3d-4f heterometallic MOFs based on a multidentate terpyridyl carboxylic acid ligand have been synthesized under the solvothermal conditions, namely, [LnZnL(CO3)2(H2O)]n (Ln = Eu (1), Gd (2), Dy (3), Ho (4), Er (5), Tm (6), Yb (7), Lu (8)) (HL = 4‧-(4-carboxyphenyl)-2,2‧:6‧,2″-terpyridine). Compounds 1-8 were structurally characterized by the elemental analyses, infrared spectra, and single crystal X-ray diffractions. Compounds 1-8 exhibit the chiral interpenetrating 3D frameworks. Interestingly, 1 can serve as the luminescent sensor to detect nitrobenzene molecules with high sensitivity. The investigations on CD spectra of single crystals clearly assigned the Cotton effect, indicating that there exist two chiral enantiomers of 1-8 in the course of crystallization. The magnetic properties of 2 and 7 were exploited, respectively.

  16. Structural trends in a series of isostructural lanthanide-copper metallacrown sulfates (Ln(III) = Pr, Nd, Sm, Eu, Gd, Dy and Ho): hexaaquapentakis[μ3-glycinehydroxamato(2-)]sulfatopentacopper(II)lanthanide(III) heptaaquapentakis[μ3-glycinehydroxamato(2-)]sulfatopentacopper(II)lanthanide(III) sulfate hexahydrate.

    Science.gov (United States)

    Pavlishchuk, Anna V; Kolotilov, Sergey V; Fritsky, Igor O; Zeller, Matthias; Addison, Anthony W; Hunter, Allen D

    2011-07-01

    The seven isostructural complexes, [Cu(5)Ln(C(2)H(4)N(2)O(2))(5)(SO(4))(H(2)O)(6.5)](2)(SO(4))·6H(2)O, where Ln(III) = Pr, Nd, Sm, Eu, Gd, Dy and Ho, are representatives of the 15-metallacrown-5 family. Each dianion of glycinehydroxamic acid (GlyHA) links two Cu(II) cations forming a cyclic [CuGlyHA](5) frame. The Ln(III) cations are located at the centre of the [CuGlyHA](5) rings and are bound by the five hydroxamate O atoms in the equatorial plane. Five water molecules are coordinated to Cu(II) cations, and one further water molecule, located close to an inversion centre between two adjacent [Cu(5)Ln(GlyHA)(5)](2+) cations, is disordered around this inversion centre and coordinated to a Cu(II) cation of either the first or second metallacrown ether. Another water molecule and one of the two crystallographically independent sulfate anions are coordinated, the latter in a bidentate fashion, to the Ln(III) cation in the axial positions. The second sulfate anion is not coordinated to the cation, but is located in an interstitial position on a crystallographic inversion centre, thus leading to disorder of the O atoms around the centre of inversion. The Ln-O bond distances follow the trend of the lanthanide contraction. The apical Ln-O bond distances are very close to the sums of the ionic radii. However, the Ln-O distances within the metallacrown units are slightly compressed and the Ln(III) cations protrude significantly from the plane of the otherwise flat metallacrown ligand, thus indicating that the cavity is somewhat too small to accommodate the Ln(III) ions comfortably. This effect decreases with the size of the lanthanide cation from complex (I) (Ln(III) = Pr; 0.459) to complex (VII) (Ln(III) = Ho; 0.422), which indicates that the smaller lanthanide cations fit the cavity of the pentacopper metallacrown ring better than the larger ones. The diminished contraction of Ln-O distances within the metallacrown planes leads to an aniostropic contraction of the unit

  17. Temperature-dependent stress in diamond-coated AlGaN/GaN heterostructures

    Czech Academy of Sciences Publication Activity Database

    Ižák, Tibor; Jirásek, Vít; Vanko, G.; Dzuba, J.; Kromka, Alexander

    2016-01-01

    Roč. 106, Sep (2016), s. 305-312 ISSN 0264-1275 R&D Projects: GA ČR(CZ) GP14-16549P Grant - others:AV ČR(CZ) SAV-16-02 Program:Bilaterální spolupráce Institutional support: RVO:68378271 Keywords : thermally induced stress * Raman spectroscopy * polycrystalline diamond film * GaN Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.364, year: 2016

  18. Phase transformations during HLnTiO{sub 4} (Ln=La, Nd) thermolysis and photocatalytic activity of obtained compounds

    Energy Technology Data Exchange (ETDEWEB)

    Silyukov, Oleg I., E-mail: olegsilyukov@yandex.ru; Abdulaeva, Liliia D.; Burovikhina, Alena A.; Rodionov, Ivan A.; Zvereva, Irina A.

    2015-03-15

    Layered HLnTiO{sub 4} (Ln=La, Nd) compounds belonging to Ruddlesden–Popper phases were found to form partially hydrated compounds Ln{sub 2}Ti{sub 2}O{sub 7}·xH{sub 2}O during thermal dehydration as well as defect oxides Ln{sub 2}□Ti{sub 2}O{sub 7} as final products. Further heating of metastable defect Ln{sub 2}□Ti{sub 2}O{sub 7} substances leads to the formation of pyrochlore-type oxides Ln{sub 2}Ti{sub 2}O{sub 7} {sub (p)}, with subsequent transformation under higher temperatures to stable layered 110-type perovskites Ln{sub 2}Ti{sub 2}O{sub 7}. The occurring structure transformations lead to an increase of photocatalytic activity in the order of HLnTiO{sub 4}<Ln{sub 2}Ti{sub 2}O{sub 7}·yH{sub 2}O<Ln{sub 2}□Ti{sub 2}O{sub 7}<Ln{sub 2}Ti{sub 2}O{sub 7} {sub (p)}<Ln{sub 2}Ti{sub 2}O{sub 7} in the reaction of hydrogen evolution from aqueous isopropanol solution. - Graphical abstract: Layered HLnTiO{sub 4} (Ln=La, Nd) compounds form partially hydrated Ln{sub 2}Ti{sub 2}O{sub 7}·xH{sub 2}O compounds during thermal dehydration, further heating results to the formation to defect oxides Ln{sub 2}□Ti{sub 2}O{sub 7}, pyrochlor-type oxides Ln{sub 2}Ti{sub 2}O{sub 7} {sub (p)}, with subsequent transformation to layered 110-type perovskites Ln{sub 2}Ti{sub 2}O{sub 7}. Structure transformations lead to an increase of photocatalytic activity in the order of HLnTiO{sub 4}<Ln{sub 2}Ti{sub 2}O{sub 7}·yH{sub 2}O<Ln{sub 2}□Ti{sub 2}O{sub 7}<Ln{sub 2}Ti{sub 2}O{sub 7} {sub (p)}<Ln{sub 2}Ti{sub 2}O{sub 7}. - Highlights: • We studied dehydration and further thermolysis of HLnTiO{sub 4} (Ln=La, Nd) compounds. • XRD, STA and solid state IR studies were carried out. • A new series of metastable Ln{sub 2}Ti{sub 2}O{sub 7}·yH{sub 2}O compounds was obtained. • We examined the photocatalytic activity of all obtained compounds. The hydrogen evolution rate increased in the course of the structure changes during thermolysis.

  19. Two new Np--Ga phases: α-NpGa2 and metastable m-NpGa2

    International Nuclear Information System (INIS)

    Giessen, B.C.; Elliott, R.O.

    1976-01-01

    Following an earlier study of metastable Np-rich Np--Ga alloys, rapidly quenched Np--Ga alloys with 63 to 80 at. pct. Ga were prepared and studied. Two new NpGa 2 phases, both with an AlB 2 type structure, were found: α-NpGa 2 , with a = 4.246A, c = 4.060A, c/a = 0.956, and m-NpGa 2 , with a = 4.412A, c = 3.642A, c/a = 0.825. While m-NpGa 2 was observed only in very fast quenched (splat cooled) samples and appears to be metastable, α-NpGa 2 is probably an equilibrium phase. In a splat cooled alloy with 75 at. pct. Ga, another, unidentified, metastable phase was observed. Crystal chemical discussions of atomic volumes, interatomic distances and axial ratios are given; the volume difference between the two forms of NpGa 2 is correlated with a valence change of Np

  20. High-pressure investigations of lanthanoid oxoarsenates. I. Single crystals of scheelite-type Ln[AsO{sub 4}] phases with Ln = La-Nd from monazite-type precursors

    Energy Technology Data Exchange (ETDEWEB)

    Metzger, Sebastian J.; Ledderboge, Florian; Schleid, Thomas [Stuttgart Univ. (Germany). Inst. fuer Anorganische Chemie; Heymann, Gunter; Huppertz, Hubert [Innsbruck Univ. (Austria). Inst. fuer Allgemeine, Anorganische und Theoretische Chemie

    2016-08-01

    Transparent single crystals of the scheelite-type Ln[AsO{sub 4}] phases with Ln = La-Nd are obtained by the pressure-induced monazite-to-scheelite type phase transition in a Walker-type module under high-pressure and high-temperature conditions of 11 GPa at 1100-1300 C. Coinciding with this transition, there is an increase in density and a reduction in molar volume of about 4.5 % for the scheelite-type phases (tetragonal, I4{sub 1}/a) for La[AsO{sub 4}] (a = 516.92(4), c = 1186.1(9) pm), Ce[AsO{sub 4}] (a = 514.60(1), c = 1175.44(2) pm), Pr[AsO{sub 4}] (a = 512.63(4), c = 1168.25(9) pm), and Nd[AsO{sub 4}] (a = 510.46(4), c = 1160.32(11) pm) as compared to the well-known monazite-type phases (monoclinic, P2{sub 1}/n). Surprisingly enough, the scheelite-type oxoarsenates(V) exhibit a lower coordination number for the Ln{sup 3+} cations (CN = 8 versus CN = 8 + 1), whereas the isolated tetrahedral [AsO{sub 4}]{sup 3-} anions (d(As-O) = 168.9-169.3 pm for the scheelites as compared to d(As-O) = 167.1-169.9 pm for the monazites) remain almost unchanged. So the densification must occur because of the loss of two edge-connections of the involved [LnO{sub 8+1}]{sup 15-} polyhedra with the [AsO{sub 4}]{sup 3-} tetrahedra in the monazite- resulting in exclusively vertex connected [LnO{sub 8}]{sup 13-} and [AsO{sub 4}]{sup 3-} units in the scheelite-type structure.

  1. Ferroelectric switching in epitaxial PbZr0.2Ti0.8O3/ZnO/GaN heterostructures

    Science.gov (United States)

    Wang, Juan; Salev, Pavel; Grigoriev, Alexei

    As a wide-bandgap semiconductor, ZnO has gained substantial interest due to its favorable properties including high electron mobility, strong room-temperature luminescence, etc. The main obstacle of its application is the lack of reproducible and low-resistivity p-type ZnO. P-type doping of ZnO through the interface charge injection, which can be achieved by the polarization switching of ferroelectric films, is a tempting solution. We explored ferroelectric switching behavior of PbZr0.2Ti0.8O3/ZnO/GaN heterostructures epitaxially grown on Sapphire substrates by RF sputtering. The electrical measurements of Pt/PbZr0.2Ti0.8O3/ZnO/GaN ferroelectric-semiconductor capacitors revealed unusual behavior that is a combination of polarization switching and a diode I-V characteristics.

  2. N2 gas egress from patients' airways during LN2 spray cryotherapy.

    Science.gov (United States)

    O'Connor, John P; Hanley, Brian M; Mulcahey, Thomas I; Sheets, Ellen E; Shuey, Kacey W

    2017-06-01

    Spray cryotherapy using liquid nitrogen (LN 2 ) is a general surgical tool used to ablate benign or malignant lesions. Adequate egress of the gaseous nitrogen (N 2 ) generated during this process must be provided for safe use when LN 2 is used within the body rather than topically. When delivered to either the gastrointestinal tract (requiring active venting via a suction tube) or body cavities open to room barometric pressure (such as lung airways) allowing for passive venting, the N 2 gas generated from the boiling process must be evacuated. This work will examine the egress of N 2 during procedures requiring passive venting from human airways undergoing liquid nitrogen spray cryotherapy. Venting characteristics for safe N 2 egress will be presented and discussed based on analytical modeling using fluid mechanics simulations and experimental studies of N 2 venting with laboratory and porcine models. Copyright © 2017 The Author(s). Published by Elsevier Ltd.. All rights reserved.

  3. Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In{sub 0.8}Ga{sub 0.2})Se{sub 2} spacer

    Energy Technology Data Exchange (ETDEWEB)

    Kasai, S. [Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako 351-0198 (Japan); Takahashi, Y. K.; Ohkubo, T. [Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Cheng, P.-H.; Ikhtiar,; Mitani, S.; Hono, K. [Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8577 (Japan); Kondou, K. [Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako 351-0198 (Japan); Otani, Y. [Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako 351-0198 (Japan); Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8581 (Japan)

    2016-07-18

    We investigated the structure and magneto-transport properties of magnetic junctions using a Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5}) Heusler alloy as ferromagnetic electrodes and a Cu(In{sub 0.8}Ga{sub 0.2})Se{sub 2} (CIGS) semiconductor as spacers. Owing to the semiconducting nature of the CIGS spacer, large magnetoresistance (MR) ratios of 40% at room temperature and 100% at 8 K were obtained for low resistance-area product (RA) values between 0.3 and 3 Ω μm{sup 2}. Transmission electron microscopy observations confirmed the fully epitaxial growth of the chalcopyrite CIGS layer, and the temperature dependence of RA indicated that the large MR was due to spin dependent tunneling.

  4. Crystal structures of orthorhombic, hexagonal, and cubic compounds of the Sm(x)Yb(2−x)TiO5 series

    International Nuclear Information System (INIS)

    Aughterson, Robert D.; Lumpkin, Gregory R.; Reyes, Massey de los; Sharma, Neeraj; Ling, Christopher D.; Gault, Baptiste; Smith, Katherine L.; Avdeev, Maxim; Cairney, Julie M.

    2014-01-01

    A series of single phase compounds with nominal stoichiometry Sm (x) Yb (2−x) TiO 5 (x=2, 1.4, 1, 0.6, and 0) have been successfully fabricated to generate a range of crystal structures covering the most common polymorphs previously discovered in the Ln 2 TiO 5 series (Ln=lanthanides and yttrium). Four of the five samples have not been previously fabricated in bulk, single phase form so their crystal structures are refined and detailed using powder synchrotron and single crystal x-ray diffraction, neutron diffraction and transmission electron microscopy. Based on the phase information from diffraction data, there are four crystal structure types in this series; orthorhombic Pnma, hexagonal P6 3 /mmc, cubic (pyrochlore-like) Fd-3m and cubic (fluorite-like) Fm-3m. The cubic materials show modulated structures with variation between long and short range ordering and the variety of diffraction techniques were used to describe these complex crystal structure types. - Graphical abstract: A high resolution image of the compound Sm 0.6 Yb 1.4 TiO 5 showing contrast from lattice fringes and the corresponding fast Fourier transform (FFT) of the HREM image with pyrochlore related diffraction spots marked “P” and fluorite marked “F”. The crystal is oriented down the [1 1 0] zone axis based on the Fd-3m structure. The ideal crystal structure (no vacancies) of the cubic, pyrochlore-like (Sm 0.6 Yb 1.4 TiO 5 ). - Highlights: • First fabrication of bulk single-phase material with stoichiometry Sm 2 TiO 5 . • Systematic study of crystal structure types within Ln 2 TiO 5 series (Ln=lanthanides). • A novel technique using IFFT of HREM images to study cubic structures

  5. Barrier height inhomogeneity in electrical transport characteristics of InGaN/GaN heterostructure interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Roul, Basanta [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Mukundan, Shruti; Chandan, Greeshma; Mohan, Lokesh; Krupanidhi, S. B., E-mail: sbk@mrc.iisc.ernet.in [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India)

    2015-03-15

    We have grown InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy and studied the temperature dependent electrical transport characteristics. The barrier height (φ{sub b}) and the ideally factor (η) estimated using thermionic emission model were found to be temperature dependent. The conventional Richardson plot of ln(J{sub s}/T{sup 2}) versus 1/kT showed two temperature regions (region-I: 400–500 K and region-II: 200–350 K) and it provides Richardson constants (A{sup ∗}) which are much lower than the theoretical value of GaN. The observed variation in the barrier height and the presence of two temperature regions were attributed to spatial barrier inhomogeneities at the heterojunction interface and was explained by assuming a double Gaussian distribution of barrier heights with mean barrier height values 1.61 and 1.21 eV with standard deviation (σ{sub s}{sup 2}) of 0.044 and 0.022 V, respectively. The modified Richardson plot of ln(J{sub s}/T{sup 2}) − (q{sup 2}σ{sub s}{sup 2}/2k{sup 2}T{sup 2}) versus 1/kT for two temperature regions gave mean barrier height values as 1.61 eV and 1.22 eV with Richardson constants (A{sup ∗}) values 25.5 Acm{sup −2}K{sup −2} and 43.9 Acm{sup −2}K{sup −2}, respectively, which are very close to the theoretical value. The observed barrier height inhomogeneities were interpreted on the basis of the existence of a double Gaussian distribution of barrier heights at the interface.

  6. The competing roles of i-ZnO in Cu(ln,Ga)Se¬2 solar cells

    NARCIS (Netherlands)

    Williams, B.L.; Zardetto, V.; Kniknie, B.J.; Verheijen, M.A.; Kessels, W.M.M.; Creatore, M.

    2016-01-01

    The electrical role of the highly resistive and transparent (HRT) i-ZnO layer in Cu(In, Ga)Se2(CIGS) solar cells is investigated. By tuning the resistivity of atomic layer deposited (ALD) i-ZnO through the use of post-growth O2-plasma treatments, it is shown that low i-ZnO carrier densities (i.e.

  7. Low temperature phase transition of the stoichiometric Ln2NiO4 oxides

    International Nuclear Information System (INIS)

    Fernandez, F.; Saez-Puche, R.; Botto, I.L.; Baran, E.J.

    1991-01-01

    In this paper we will present a comparative study of the structural phase transition in Ln 2 NiO 4 oxides, by means of neutron diffraction and infrared(IR) spectroscopy. In the Ln 2 NiO 4 oxides (Ln=La, Pr and Nd), there is a low temperature structural phase transition from the orthorhombic symmetry to a tetragonal phase, of first order character. The IR spectra show, at low temperature, a splitting of the bands related with the stretching Ni-O, strongly correlated with the phase transformation. From the neutron data, the phase transition can be visualized as a sudden tilt of the nickel octahedra

  8. Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

    Science.gov (United States)

    Qiu, Yueming; Chacon, Rebecca; Uhl, David; Yang, Rui

    2005-01-01

    In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

  9. 3d-4f {Co(II)3Ln(OR)4} Cubanes as Bio-Inspired Water Oxidation Catalysts.

    Science.gov (United States)

    Evangelisti, Fabio; Moré, René; Hodel, Florian; Luber, Sandra; Patzke, Greta Ricarda

    2015-09-02

    Although the {CaMn4O5} oxygen evolving complex (OEC) of photosystem II is a major paradigm for water oxidation catalyst (WOC) development, the comprehensive translation of its key features into active molecular WOCs remains challenging. The [Co(II)3Ln(hmp)4(OAc)5H2O] ({Co(II)3Ln(OR)4}; Ln = Ho-Yb, hmp = 2-(hydroxymethyl)pyridine) cubane WOC series is introduced as a new springboard to address crucial design parameters, ranging from nuclearity and redox-inactive promoters to operational stability and ligand exchange properties. The {Co(II)3Ln(OR)4} cubanes promote bioinspired WOC design by newly combining Ln(3+) centers as redox-inactive Ca(2+) analogues with flexible aqua-/acetate ligands into active and stable WOCs (max. TON/TOF values of 211/9 s(-1)). Furthermore, they open up the important family of 3d-4f complexes for photocatalytic applications. The stability of the {Co(II)3Ln(OR)4} WOCs under photocatalytic conditions is demonstrated with a comprehensive analytical strategy including trace metal analyses and solution-based X-ray absorption spectroscopy (XAS) investigations. The productive influence of the Ln(3+) centers is linked to favorable ligand mobility, and the experimental trends are substantiated with Born-Oppenheimer molecular dynamics studies.

  10. Effect of the ITO substrate on the growth of Cu(In,Ga)Se{sub 2}, CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8} and CuIn{sub 3}Se{sub 5} thin films by flash evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Friedrich, E J; Merino, J M; Leon, M [Department of Applied Physics, Universidad Autonoma de Madrid (UAM), Cantoblanco, 28049 Madrid (Spain); Trigo, J F; Guillen, C [Department of Energy, CIEMAT, Avda Complutense, 22, 28040 Madrid (Spain); Ramiro, J, E-mail: josue.friedrich@uam.e [Department of Theory of Signal and Communications, URJC, Campus Fuenlabrada, 122, 28943 Madrid (Spain)

    2009-04-21

    Structural, compositional, electrical and morphological properties of CuIn{sub 1-x}Ga{sub x}Se{sub 2} (x = 0.15, 0.30) and ordered defect compounds (ODC) CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8}, CuIn{sub 3}Se{sub 5} thin films grown by flash evaporation onto soda lime glass substrates (SLG) and ITO/SLG have been studied. Polycrystalline thin films with accentuated preferential orientation in the (1 1 2) plane of the tetragonal structure have been obtained. Annealing in Se atmosphere improves the structural, morphological, electrical and optical properties of the evaporated films, but provokes the formation of a CuIn{sub x}Se{sub y} phase on the surface of the films. Band gap values ranging between 1.01 and 1.21 eV have been obtained for the as-grown CuIn{sub 1-x}Ga{sub x}Se{sub 2} thin films and between 1.09 and 2.01 eV for the CuGa{sub 3}Se{sub 5}, CuGa{sub 5}Se{sub 8} and CuIn{sub 3}Se{sub 5} thin films.

  11. The role of Ln

    NARCIS (Netherlands)

    Katayama, Y.; Kayumi, T.; Ueda, J.; Dorenbos, P.; Viana, B; Tanabe, S

    2017-01-01

    In this paper, Mn2+ and Ln3+ (Ln = Eu, Yb) co-doped MgGeO3 phosphors were prepared using a solid state reaction technique, and their optical properties were investigated. Mn2+-doped samples exhibit persistent luminescence in the red region, peaking at 677 nm, because of the 4T1 → 6A1 transition of

  12. Nano-sized quaternary CuGa2In3S8 as an efficient photocatalyst for solar hydrogen production

    KAUST Repository

    Kandiel, Tarek; Anjum, Dalaver H.; Takanabe, Kazuhiro

    2014-01-01

    The synthesis of quaternary metal sulfide (QMS) nanocrystals is challenging because of the difficulty to control their stoichiometry and phase structure. Herein, quaternary CuGa2In3S8 photocatalysts with a primary particle size of ≈4nm

  13. 2-D and 3-D phosphotungstate-based TM-Ln heterometallic derivatives constructed from dimeric [Ln({alpha}-PW{sub 11}O{sub 39}){sub 2}]{sup 11-} fragments and copper-organic complex linkers

    Energy Technology Data Exchange (ETDEWEB)

    Shang, Sensen [Institute of Molecular and Crystal Engineering, College of Chemistry and Chemical Engineering, Henan University, Kaifeng, Henan 475004 (China); Zhao, Junwei, E-mail: zhaojunwei@henu.edu.cn [Institute of Molecular and Crystal Engineering, College of Chemistry and Chemical Engineering, Henan University, Kaifeng, Henan 475004 (China); State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Chen, Lijuan [Institute of Molecular and Crystal Engineering, College of Chemistry and Chemical Engineering, Henan University, Kaifeng, Henan 475004 (China); Basic Experiment Teaching Center, Henan University, Kaifeng, Henan 475004 (China); Li, Yuye; Zhang, Jingli; Li, Yanzhou [Institute of Molecular and Crystal Engineering, College of Chemistry and Chemical Engineering, Henan University, Kaifeng, Henan 475004 (China); Niu, Jingyang, E-mail: jyniu@henu.edu.cn [Institute of Molecular and Crystal Engineering, College of Chemistry and Chemical Engineering, Henan University, Kaifeng, Henan 475004 (China)

    2012-12-15

    Three organic-inorganic hybrid TM-Ln heterometallic phosphotungstates [Cu(dap){sub 2}(H{sub 2}O)][Cu(dap){sub 2}]{sub 3.5}[La({alpha}-HPW{sub 11}O{sub 39}){sub 2}]{center_dot}6H{sub 2}O (1) [Cu(dap){sub 2}(H{sub 2}O)]{sub 0.5}[Cu(dap){sub 2}]{sub 4}[Nd({alpha}-HPW{sub 11}O{sub 39}){sub 2}]{center_dot}4H{sub 2}O (2) and [Cu(dap){sub 2}(H{sub 2}O)]{sub 2}[Cu(dap){sub 2}]{sub 3.5}[Eu({alpha}-PW{sub 11}O{sub 39}){sub 2}]{center_dot}6H{sub 2}O (3) (dap=1,2-diaminopropane) have been hydrothermally synthesized and structurally characterized by elemental analyses, IR spectra, optical diffuse reflectance spectra, powder X-ray diffraction (PXRD), thermogravimetric (TG) analyses and single-crystal X-ray diffraction. Their common features are that 1-3 all consist of asymmetric sandwich-type subunits [Ln({alpha}-PW{sub 11}O{sub 39}){sub 2}]{sup 11-} and [Cu(dap){sub 2}]{sup 2+} bridges. Both 1 and 2 display the 2-D (4,4)-topological sheets whereas 3 exhibits the 3-D 5-connected (4{sup 6}{center_dot}6{sup 4}) topological framework. The magnetic properties of 2 and 3 and the luminescence performance of 3 have been measured. - Graphical Abstract: Three TM-Ln heterometallic phosphotungstates 1-3 have been synthesized and characterized by elemental analyses, IR spectra, optical diffuse reflectance spectra, X-ray diffraction, thermogravimetric analyses magnetic susceptibility and luminescent properties. Highlights: Black-Right-Pointing-Pointer Cu{sup II}-Ln{sup III} heterometallic polyoxometalates. Black-Right-Pointing-Pointer 2-D and 3-D organic-inorganic hybrid phosphotungstates. Black-Right-Pointing-Pointer 2-D and 3-D structures consisting of Cu{sup II}-Ln{sup III} heterometals.

  14. The action of silicon doping in the first two to five barriers of eight periods In{sub 0.2}Ga{sub 0.8}N/GaN multiple quantum wells of blue LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Meng-Chu [Department of Applied Science, National Taitung University, Taitung 950, Taiwan (China); Cheng, Yung-Chen, E-mail: chengyc@mail.nutn.edu.tw [Department of Materials Science, National University of Tainan, Tainan 70005, Taiwan (China); Huang, Chun-Yuan [Department of Applied Science, National Taitung University, Taitung 950, Taiwan (China); Wang, Hsiang-Chen [Advanced Institute of Manufacturing with High-tech Innovations (AIM-HI), National Chung Cheng University, Chia-Yi 62102, Taiwan (China); Lin, Kuang-I [Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan (China); Yang, Zu-Po [Institute of Photonic System, National Chiao Tung University, Tainan 71150, Taiwan (China)

    2016-09-15

    First two to five barriers in the growth sequence having silicon (Si) doping of eight periods In{sub 0.2}Ga{sub 0.8}N/GaN quantum wells (QWs) on twenty pairs of In{sub 0.02}Ga{sub 0.98}N/GaN superlattice strain relief layers (SRLs) of blue LEDs were prepared by low pressure metal–organic chemical vapor deposition (LPMOCVD) system on patterned sapphire substrates (PSSs). The effect of doping layers on the luminescence properties of QWs of blue LEDs was investigated. For the sample with first four barriers having Si doping, formation of soft confinement of QWs potential and strong carrier localization inside QWs were occurred. There is better spread of carriers among eight QWs and strong radiative recombination of carriers inside QWs. The increase of output power and external quantum efficiency (EQE) is due to decrease of Auger processes, leakage of carriers out of QWs, and nonradiative recombination centers. The consequences demonstrate that first four barriers with Si doping possess the favorable doping condition for eight periods In{sub 0.2}Ga{sub 0.8}N/GaN QWs.

  15. The effect of lanthanides on color properties of the (Bi2O30.7(Ln2O30.3 compounds

    Directory of Open Access Journals (Sweden)

    Šulcová P.

    2008-01-01

    Full Text Available (Bi2O30.7(Ln2O30,3 solid solutions were synthesized as new inorganic yellow and orange pigments and their color properties have been investigated as possible ecological materials. The pigments were prepared by the solid state reaction of mixed oxides (Bi2O30.7(Ln2O30.3 of various rare earth cations (Ln = Eu, Gd, Tm, Yb and Lu. All the synthesized pigment samples were found to have color coordinates, low a* and high b* and exhibit the color from pale light yellow to orange. Reflectance spectra of the samples show high reflectance percentage in the 600 - 700 nm range. Characterization of the (Bi2O30.7(Ln2O30,3 solid solutions suggests that they have a potential to be alternative yellow colorants for paints, inks, plastics, and ceramics.

  16. Effect of Ga in the photocatalytic properties of TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Manriquez, Ma E [Instituto de Ciencias, BUAP, 4 Sur 104, Puebla, Puebla 72000 (Mexico); Sanchez-Mora, E [Instituto de FIsica, BUAP. AP J-48, 72570 Puebla Pue. (Mexico); Hernandez-Cortez, J G [Instituto Mexicano del Petroleo, Eje Central L. Cardenas 152, A.P. 14-805, 07730 Mexico D.F. (Mexico); Moreno-Rodriguez, A [Fac. de Ciencias Quimicas, BUAP. 4 Sur 104, Puebla, Puebla 72000 (Mexico); Hernandez Garcia, T, E-mail: esanchez@sirio.ifuap.buap.m [Fac. de Ciencias Quimicas, UANL, Av. Pedro de Alba s/n Cd. Universitaria C. P. 66400, San Nicolas de los Garza, N. L. (Mexico)

    2009-05-01

    In this work we prepared a series of GaZn/TiO{sub 2} (5 wt%, 10 wt%, and 15 wt% of Ga) photocatalysts by the sol-gel method. The X-ray diffraction results showed the presence of TiO{sub 2} in anatase phase. Also, in the GaZn/TiO{sub 2} system a small peak assigned to Ga{sub 2}O{sub 3} is present. The specific surface area of the Zn/TiO{sub 2} is 97 m{sup 2}/g and the specific surface area increases to 132 m{sup 2}/g when the amount of Ga increases. The energy band gap values obtained by UV-VIS diffuse reflectance spectroscopy are 2.9, 3.12 and 3.15 eV for 5GaZn/TiO{sub 2}, 10GaZn/TiO{sub 2} and 15GaZn/TiO{sub 2} respectively. The results of the photocatalytic activity show that the total destruction of phenol is more efficient in GaZn/TiO{sub 2} than in the Zn/TiO{sub 2} photocatalysts.

  17. Study of LnBaCo{sub 2}O{sub 6-d}elta (Ln = Pr, Nd, Sm and Gd) double perovskites as new cathode material for IT-SOFC

    Energy Technology Data Exchange (ETDEWEB)

    Chavez, E; Mueller, M; Mogni, L; Caneiro, A, E-mail: mogni@cab.cnea.gov.a [Centro Atomico Bariloche-CNEA, Instituto Balseiro. Av. Bustillo 9500, S. C. de Bariloche 8400 (Argentina)

    2009-05-01

    Oxides with double perovskites structures of general composition LnBaCo{sub 2}O{sub 6-d}elta (Ln = Pr, Nd, Sm and Gd) were synthesized by solid state reaction with the purpose to evaluate new materials to be used as cathodes in intermediate temperature solid oxide fuel cell (IT-SOFC). A preliminary study about electrochemical properties was performed by impedance spectroscopy between 500 and 800 deg. C under atmosphere of pure O{sub 2}. Symmetrical cells were obtained by spray deposition of LnBaCo{sub 2}O{sub 6-d}elta (Ln = Pr, Nd, Sm and Gd) at both sides of a dense ceramic electrolyte. The impedance spectroscopy measurements as a function of temperatures show a hysteresis loop which could be associated to a tetragonal/orthorhombic phase transition. The existence of this transition was corroborated by high temperature X-Ray diffraction and Differential Scanning Calorimetry measurements.

  18. Estudo de alguns compostos organolantanídeos: [LnCp2Cl.PPh3

    Directory of Open Access Journals (Sweden)

    Gatti Paula M.

    2000-01-01

    Full Text Available In this work we present the synthesis and characterization of some organolanthanide compounds [LnCp2Cl.PPh3], Ln = La, Nd, Eu, Yb and Lu. The catalytic activity of these compounds has been verified in cyclohexene hydrogenation. Cyclohexane was identified by¹H NMR analysis in the reaction products.

  19. Synthesis, crystal structure, optical and thermal properties of lanthanide hydrogen-polyphosphates Ln[H(PO3)4] (Ln = Tb, Dy, Ho).

    Science.gov (United States)

    Förg, Katharina; Höppe, Henning A

    2015-11-28

    Lanthanide hydrogen-polyphosphates Ln[H(PO3)4] (Ln = Tb, Dy, Ho) were synthesised as colourless (Ln = Tb, Dy) and light pink (Ln = Ho) crystalline powders by reaction of Tb4O7/Dy2O3/Ho2O3 with H3PO3 at 380 °C. All compounds crystallise isotypically (P2(1)/c (no. 14), Z = 4, a(Tb) = 1368.24(4) pm, b(Tb) = 710.42(2) pm, c(Tb) = 965.79(3) pm, β(Tb) = 101.200(1)°, 3112 data, 160 parameters, wR2 = 0.062, a(Ho) = 1363.34(5) pm, b(Ho) = 709.24(3) pm, c(Ho) = 959.07(4) pm, β(Ho) = 101.055(1)°, 1607 data, 158 parameters, wR2 = 0.058). The crystal structure comprises two different infinite helical chains of corner-sharing phosphate tetrahedra. In-between these chains the lanthanide ions are located, coordinated by seven oxygen atoms belonging to four different polyphosphate chains. Vibrational, UV/Vis and fluorescence spectra of Ln[H(PO3)4] (Ln = Tb, Dy, Ho) as well as Dy[H(PO3)4]:Ln (Ln = Ce, Eu) and the magnetic and thermal behaviour of Tb[H(PO3)4] are reported.

  20. Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment

    Czech Academy of Sciences Publication Activity Database

    Babchenko, O.; Dzuba, J.; Lalinský, T.; Vojs, M.; Vincze, A.; Ižák, Tibor; Vanko, G.

    2017-01-01

    Roč. 395, Feb (2017), s. 92-97 ISSN 0169-4332 R&D Projects: GA ČR(CZ) GP14-16549P Grant - others:AV ČR(CZ) SAV-16-02 Program:Bilaterální spolupráce Institutional support: RVO:68378271 Keywords : AIGaN/GaN heterostructure * hydrogen plasma * SIMS * TLM * HEMT Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.387, year: 2016

  1. Growth of GaN layers using Ga2O vapor obtained from Ga and H2O vapor

    International Nuclear Information System (INIS)

    Sumi, Tomoaki; Taniyama, Yuuki; Takatsu, Hiroaki; Juta, Masami; Kitamoto, Akira; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke; Isemura, Masashi

    2015-01-01

    In this study, we performed growth of GaN layers using Ga 2 O vapor synthesized from Ga and H 2 O vapor. In this process, we employed H 2 O vapor instead of HCl gas in hydride vapor phase epitaxy (HVPE) to synthesize Ga source gas. In the synthesis reaction of Ga 2 O, a Ga 2 O 3 whisker formed and covered Ga, which impeded the synthesis reaction of Ga 2 O. The formation of the Ga 2 O 3 whisker was suppressed in H 2 ambient at high temperatures. Then, we adopted this process to supply a group III precursor and obtained an epitaxial layer. X-ray diffraction (XRD) measurement revealed that the epitaxial layer was single-crystalline GaN. Growth rate increased linearly with Ga 2 O partial pressure and reached 104 µm/h. (author)

  2. Host composition dependent tunable multicolor emission in the single-phase Ba2(Ln1-zTbz)(BO3)2Cl:Eu phosphors

    NARCIS (Netherlands)

    Xia, Z.; Zhuang, J.; Meijerink, A.; Jing, X.

    2013-01-01

    A new strategy based on the host composition design has been adopted to obtain efficient color-tunable emission from Ba2Ln0.97−zTbz(BO3)2Cl:0.03Eu (Ln = Y, Gd and Lu, z = 0–0.97) phosphors. This study reveals that the single-phase Ba2Ln1−zTbz(BO3)2Cl compounds can be applied to use allowed Eu2+

  3. Comparison of trap characteristics between AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by frequency dependent conductance measurement

    International Nuclear Information System (INIS)

    Chakraborty, Apurba; Biswas, Dhrubes

    2015-01-01

    Frequency dependent conductance measurement is carried out to observe the trapping effect in AlGaN/InGaN/GaN double heterostructure and compared that with conventional AlGaN/GaN single heterostructure. It is found that the AlGaN/InGaN/GaN diode structure does not show any trapping effect, whereas single heterostructure AlGaN/GaN diode suffers from two kinds of trap energy states in near depletion to higher negative voltage bias region. This conductance behaviour of AlGaN/InGaN/GaN heterostructure is owing to more Fermi energy level shift from trap energy states at AlGaN/InGaN junction compare to single AlGaN/GaN heterostructure and eliminates the trapping effects. Analysis yielded interface trap energy state in AlGaN/GaN is to be with time constant of (33.8–76.5) μs and trap density of (2.38–0.656) × 10 12  eV −1  cm −2 in −3.2 to −4.8 V bias region, whereas for AlGaN/InGaN/GaN structure no interface energy states are found and the extracted surface trap energy concentrations and time constants are (5.87–4.39) ×10 10  eV −1  cm −2 and (17.8–11.3) μs, respectively, in bias range of −0.8–0.0 V

  4. Enhanced terahertz detection using multiple GaAs HEMTs connected in series

    KAUST Repository

    Elkhatib, Tamer A.; Veksler, Dmitry B.; Salama, Khaled N.; Zhang, Xi-C.; Shur, Michael S.

    2012-01-01

    We report here, for the first time, on enhanced nonresonant detection of terahertz radiation using multiple InGaAs/GaAs high-electron-mobility transistors (HEMTs) connected in series and biased by a direct drain current. A 1.63 THz (184 mum) response is proportional to the number of detecting transistors operating in saturation region at the same gate-source bias voltage. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by radiation in channels of devices.

  5. Enhanced terahertz detection using multiple GaAs HEMTs connected in series

    KAUST Repository

    Elkhatib, Tamer A.

    2012-07-28

    We report here, for the first time, on enhanced nonresonant detection of terahertz radiation using multiple InGaAs/GaAs high-electron-mobility transistors (HEMTs) connected in series and biased by a direct drain current. A 1.63 THz (184 mum) response is proportional to the number of detecting transistors operating in saturation region at the same gate-source bias voltage. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by radiation in channels of devices.

  6. Ternary gallides RE{sub 4}Rh{sub 9}Ga{sub 5}, RE{sub 5}Rh{sub 12}Ga{sub 7} and RE{sub 7}Rh{sub 18}Ga{sub 11} (RE=Y, La-Nd, Sm, Gd, Tb). Intergrowth structures with MgCu{sub 2} and CaCu{sub 5} related slabs

    Energy Technology Data Exchange (ETDEWEB)

    Seidel, Stefan; Rodewald, Ute C.; Poettgen, Rainer [Univ. Muenster (Germany). Inst. fuer Anorganische und Analytische Chemie; Janka, Oliver [Univ. Oldenburg (Germany). Inst. fuer Chemie

    2017-07-01

    Fourteen ternary gallides RE{sub 4}Rh{sub 9}Ga{sub 5}, RE{sub 5}Rh{sub 12}Ga{sub 7} and RE{sub 7}Rh{sub 18}Ga{sub 11} (RE=Y, La-Nd, Sm, Gd, Tb) were synthesized from the elements by arc-melting, followed by different annealing sequences either in muffle or induction furnaces. The samples were characterized through Guinier powder patterns and the crystal structures of Ce{sub 4}Rh{sub 9}Ga{sub 5}, Ce{sub 5}Rh{sub 12}Ga{sub 7}, Ce{sub 7}Rh{sub 18}Ga{sub 11}, Nd{sub 5}Rh{sub 10.44(4)}Ga{sub 8.56(4)}, Nd{sub 4}Rh{sub 9}Ga{sub 5} and Gd{sub 4}Rh{sub 9}Ga{sub 5} were refined from single crystal X-ray diffractometer data. The new gallides are the n=2, 3 and 5 members of the RE{sub 2+n} Rh{sub 3+3n} Ga{sub 1+2n} structure series in the Parthe intergrowth concept. The slabs of these intergrowth structures derive from the cubic Laves phase MgCu{sub 2} (Mg{sub 2}Ni{sub 3}Si as ternary variant) and CaCu{sub 5} (CeCo{sub 3}B{sub 2} as ternary variant). Only the Nd{sub 5}Rh{sub 10.44(4)}Ga{sub 8.56(4)} crystal shows Rh/Ga mixing within the Laves type slabs. Magnetic susceptibility measurements reveal Pauli paramagnetism for Y{sub 4}Rh{sub 9}Ga{sub 5} and Curie-Weiss paramagnetism for Gd{sub 4}Rh{sub 9}Ga{sub 5} and Tb{sub 4}Rh{sub 9}Ga{sub 5}. Low-temperature data show ferromagnetic ordering at T{sub C}=78.1 (Gd{sub 4}Rh{sub 9}Ga{sub 5}) and 55.8 K (Tb{sub 4}Rh{sub 9}Ga{sub 5}).

  7. Magnetic properties of cyano-bridged Ln3+-M3+ complexes. Part I: trinuclear complexes (Ln3+ = La, Ce, Pr, Nd, Sm; M3+ = FeLS, Co) with bpy as blocking ligand.

    Science.gov (United States)

    Figuerola, Albert; Ribas, Joan; Llunell, Miquel; Casanova, David; Maestro, Miguel; Alvarez, Santiago; Diaz, Carmen

    2005-10-03

    The reaction of Ln(NO3)3(aq) with K3[Fe(CN)6] or K3[Co(CN)6] and 2,2'-bipyridine in water/ethanol led to eight trinuclear complexes: trans-[M(CN)4(mu-CN)2{Ln(H2O)4(bpy)2}2][M(CN)6].8H2O (M = Fe3+ or Co3+, Ln = La3+, Ce3+, Pr3+, Nd3+, and Sm3+). The structures for the eight complexes [La2Fe] (1), [Ce2Fe] (2), [Pr2Fe] (3), [Nd2Fe] (4), [Ce2Co] (5), [Pr2Co] (6), [Nd2Co] (7), and [Sm2Co] (8) have been solved; they crystallize in the triclinic space group P and are isomorphous. They exhibit a supramolecular 3D architecture through hydrogen bonding and pi-pi stacking interactions. A stereochemical study of the nine-vertex polyhedra of the lanthanide ions, based on continuous shape measures, is presented. No significant magnetic interaction was found between the lanthanide(III) and the iron(III) ions.

  8. Synthesis, structure, and polymorphism of A{sub 3}LnSi{sub 2}O{sub 7} (A=Na, K; Ln=Sm, Ho, Yb)

    Energy Technology Data Exchange (ETDEWEB)

    Latshaw, Allison M.; Yeon, Jeongho; Smith, Mark D.; Loye, Hans-Conrad zur, E-mail: zurloye@mailbox.sc.edu

    2016-03-15

    Four new members of the A{sub 3}LnSi{sub 2}O{sub 7} family, K{sub 3}SmSi{sub 2}O{sub 7}, Na{sub 3}HoSi{sub 2}O{sub 7}, and two polymorphs of Na{sub 3}YbSi{sub 2}O{sub 7}, are reported. K{sub 3}SmSi{sub 2}O{sub 7} crystallizes in the hexagonal space group P6{sub 3}/mcm, Na{sub 3}HoSi{sub 2}O{sub 7} and Na{sub 3}YbSi{sub 2}O{sub 7} crystallize in the hexagonal space group P6{sub 3}/m, and Na{sub 3}YbSi{sub 2}O{sub 7} crystallizes in the trigonal space group P31c. The Na{sub 3}YbSi{sub 2}O{sub 7} composition that crystallizes in P31c is a new structure type. The magnetic properties for the Ho and Yb analogs are reported. - Graphical abstract: The different structure types and polymorphs of the A{sub 3}LnSi{sub 2}O{sub 7} family reported. - Highlights: • Four new members of the A{sub 3}LnSi{sub 2}O{sub 7} family are presented. • Na{sub 3}YbSi{sub 2}O{sub 7} is reported as two polymorphs, one is a new structure type. • Crystals synthesized out of molten fluoride fluxes.

  9. Investigation of series resistance and surface states in Au/n - GaP structures

    International Nuclear Information System (INIS)

    Kiymaz, A.; Onal, B.; Ozer, M.; Acar, S.

    2009-01-01

    The variation in series resistance and surface state density of Au/n - GaP Schottky diodes have been systematically investigated at room temperature by using capacitance-voltage C-V and conductance-voltage G/w-V measurements techniques. The C-V and G/w-V characteristics of these devices were investigated by considering series resistance effects in a wide frequency range. It is shown that the capacitance of the Au/n - GaP Schottky diode decreases with increasing frequency. It is assumed that the surface states were responsible for this behaviour. The distribution profile of Rs-V gives a peak in the depletion region at low frequencies and disappears with increasing frequencies

  10. KCa4(BO33:Ln3+ (Ln = Dy, Eu, Tb phosphors for near UV excited white–light–emitting diodes

    Directory of Open Access Journals (Sweden)

    Allu Amarnath Reddy

    2013-02-01

    Full Text Available A series of doped KCa4(BO33:Ln3+ (Ln: Dy, Eu and Tb compositions were synthesized by solid–state reaction method and their photoluminescent properties were systematically investigated to ascertain their suitability for application in white light emitting diodes. The X–ray diffraction (XRD and nuclear magnetic resonance (MAS–NMR data indicates that Ln3+–ions are successfully occupied the non–centrosymmetric Ca2+ sites, in the orthorhombic crystalline phase of KCa4(BO33 having space group Ama2, without affecting the boron chemical environment. The present phosphor systems could be efficiently excitable at the broad UV wavelength region, from 250 to 350 nm, compatible to the most commonly available UV light–emitting diode (LED chips. Photoluminescence studies revealed optimal near white–light emission for KCa4(BO33 with 5 wt.% Dy3+ doping, while warm white–light (CIE; X = 0.353, Y = 0.369 is obtained at 1wt.% Dy3+ ion concentration. The principle of energy transfer between Eu3+ and Tb3+ also demonstrates the potential white–light from KCa4(BO33:Eu3+,Tb3+ phosphor. Whereas, single Tb3+ and Eu3+–doped systems showed bright green (Tb3+ and red (Eu3+ emissions, respectively. Having structural flexibility along with remarkable chemical/thermal stability and suitable quantum efficiency these phosphors can be promising candidates as white–light–emitter for near UV LEDs.

  11. Magnetic upconverting fluorescent NaGdF4:Ln3+ and iron-oxide@NaGdF4:Ln3+ nanoparticles

    Science.gov (United States)

    Shrivastava, Navadeep; Rocha, Uéslen; Muraca, Diego; Jacinto, Carlos; Moreno, Sergio; Vargas, J. M.; Sharma, S. K.

    2018-05-01

    Microwave assisted solvothermal method has been employed to synthesize multifunctional upconverting β-NaGdF4:Ln3+ and magnetic-upconverting Fe3O4/γ-Fe2O3@NaGdF4:Ln3+ (Ln = Yb and Er) nanoparticles. The powder x-ray diffraction data confirms the hexagonal structure of NaGdF4:Ln3+ and high resolution transmission electron microscopy shows the formation of rod shaped NaGdF4:Ln3+ (˜ 20 nm) and ovoid shaped Fe3O4/γ-Fe2O3@NaGdF4:Ln3+ (˜ 15 nm) nanoparticles. The magnetic hysteresis at 300 K for β-NaGdF4:Ln3+ demonstrates paramagnetic features, whereas iron-oxide@β-NaGdF4:Ln3+ exhibits superparamagnetic behavior along with a linear component at large applied field due to paramagnetic NaGdF4 matrix. Both nanoparticle samples provide an excellent green emitting [(2H11/2, 4S3/2)→4I15/2 (˜ 540 nm)] upconversion luminescence emission under excitation at 980 nm. The energy migration between Yb and Er in NaGdF4 matrix has been explored from 300-800 nm. Intensity variation of blue, green and red lines and the observed luminescence quenching due to the presence of Fe3O4/γ-Fe2O3 in the composite has been proposed. These kinds of materials contain magnetic and luminescence characteristics into single nanoparticle open new possibility for bioimaging applications.

  12. Phase diagrams for the M2MoO4–Ln2(MoO43–Hf(MoO42 systems, where M = Li–Cs, Tl and Ln = La–Lu

    Directory of Open Access Journals (Sweden)

    Zh. G. Bazarova

    2017-12-01

    Full Text Available In this paper, the results of systematic studies of complex molybdate systems M2MoO4–Ln2(MoO43–Hf(MoO42 (M = Li–Cs, Tl; Ln = La–Lu are presented. Subsolidus phase diagrams of ternary systems were constructed and new triple molybdates were obtained. The optimum synthesis conditions for poly- and monocrystalline form were determined. According to single-crystal data, the structure of one of the representatives of triple molybdates was determined.

  13. Gallium-containing Heusler phases ScRh{sub 2}Ga, ScPd{sub 2}Ga, TmRh{sub 2}Ga and LuRh{sub 2}Ga. Magnetic and solid state NMR-spectroscopic characterization

    Energy Technology Data Exchange (ETDEWEB)

    Heletta, Lukas; Seidel, Stefan; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Benndorf, Christopher [Leipzig Univ. (Germany). Inst. fuer Mineralogie, Kristallographie und Materialwissenschaften; Eckert, Hellmut [Muenster Univ. (Germany). Inst. fuer Physikalische Chemie; Sao Paulo Univ., Sao Carlos (Brazil). Inst. of Physics

    2017-10-01

    The gallium-containing Heusler phases ScRh{sub 2}Ga, ScPd{sub 2}Ga, TmRh{sub 2}Ga and LuRh{sub 2}Ga have been synthesized by arc-melting of the elements followed by different annealing sequences to improve phase purity. The samples have been studied by powder X-ray diffraction. The structures of Lu{sub 0.97}Rh{sub 2}Ga{sub 1.03} (Fm3m, a=632.94(5) pm, wR2=0.0590, 46 F{sup 2} values, seven variables) and Sc{sub 0.88}Rh{sub 2}Ga{sub 1.12} (a=618.91(4) pm, wR2=0.0284, 44 F{sup 2} values, six variables) have been refined from single crystal X-ray diffractometer data. Both gallides show structural disorder through Lu/Ga and Sc/Ga mixing. Temperature dependent magnetic susceptibility measurements showed Pauli paramagnetism for ScRh{sub 2}Ga, ScPd{sub 2}Ga, and LuRh{sub 2}Ga and Curie-Weiss paramagnetism for TmRh{sub 2}Ga. {sup 45}Sc and {sup 71}Ga solid state MAS NMR spectroscopic investigations of the Sc containing compounds confirmed the site mixing effects typically observed for Heusler phases. The data indicate that the effect of mixed Sc/Ga occupancy is significantly stronger in ScRh{sub 2}Ga than in ScPd{sub 2}Ga.

  14. Structures, magnetic, and thermal properties of Ln3MoO7 (Ln=La, Pr, Nd, Sm, and Eu)

    International Nuclear Information System (INIS)

    Nishimine, Hiroaki; Wakeshima, Makoto; Hinatsu, Yukio

    2005-01-01

    Ternary lanthanide-molybdenum oxides Ln 3 MoO 7 (Ln=La, Pr, Nd, Sm, Eu) have been prepared. Their structures were determined by X-ray diffraction measurements. They crystallize in a superstructure of cubic fluorite and the space group is P2 1 2 1 2 1 . The Mo ion is octahedrally coordinated by six oxygens and the slightly distorted octahedra share corners forming a zig-zag chain parallel to the b-axis. These compounds have been characterized by magnetic susceptibility and specific heat measurements. The La 3 MoO 7 shows complex magnetic behavior at 150 and 380K. Below these temperatures, there is a large difference in the temperature-dependence of the magnetic susceptibility measured under zero-field-cooled condition and under field-cooled condition. The Nd 3 MoO 7 show a clear antiferromagnetic transition at 2.5K. From the susceptibility measurements, both Pr 3 MoO 7 and Sm 3 MoO 7 show the existence of magnetic anomaly at 8.0 and 2.5K, respectively. The results of the specific heat measurements also show anomalies at the corresponding magnetic transition temperatures. The differential scanning calorimetry measurements indicate that two phase-transitions occur for any Ln 3 MoO 7 compound in the temperature range between 370 and 710K

  15. Structure of trihydrated rare-earth acid diphosphates LnHP2O7·3H2O (Ln=La, Er)

    International Nuclear Information System (INIS)

    Ben Moussa, S.; Ventemillas, S.; Cabeza, A.; Gutierrez-Puebla, E.; Sanz, J.

    2004-01-01

    In trihydrated lanthanum acid-diphosphates LnHP 2 O 7 ·3H 2 O, prepared from acid LnCl 3 and Na 4 P 2 O 7 solutions (pH=1), two crystal forms were obtained. Layered structures of two representative members of this family have been determined by single-crystal X-ray diffraction (XRD) technique. In the case of orthorhombic LaHP 2 O 7 ·3H 2 O (type I), lanthanum cations are ninefold coordinated and diphosphate groups adopt a staggered (alternated) configuration. In the case of triclinic ErHP 2 O 7 ·3H 2 O (type II), erbium cations are eightfold coordinated and diphosphate groups adopt an eclipsed configuration. In agreement with Infrared (IR) spectroscopic data, a bended configuration for diphosphate groups has been deduced. In both structures, one-dimensional chains of edge-sharing rare-earth polyhedra are linked together by diphosphate groups to form the phosphate layers. In both diphosphates, PO 4 and HPO 4 environments have been identified by 31 P MAS-NMR technique. In the two compounds, OH groups of HPO 4 tetrahedra point out of diphosphate planes interacting with adjacent layers. In La-diphosphate, the interaction between HPO 4 groups and water molecules of adjacent layers is favored; however, in Er-diphosphate, the interaction between phosphate acid groups of contiguous layers is produced. Based on structural information deduced, differences detected in IR and NMR spectra of two disphosphates are discussed

  16. SXPS study of model GaAs(100)/electrolyte interface

    Energy Technology Data Exchange (ETDEWEB)

    Lebedev, Mikhail V. [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation); Mankel, Eric; Mayer, Thomas; Jaegermann, Wolfram [Institute of Material Sciences, Darmstadt University of Technology, Darmstadt (Germany)

    2010-02-15

    Model GaAs(100)/electrolyte interfaces are prepared in vacuum by co-adsorption of Cl{sub 2} and 2-propanol molecules at LN{sub 2} temperature. On adsorption of Cl{sub 2} molecules gallium chlorides, elemental arsenic and arsenic chlorides are formed. Co-adsorption of 2-propanol causes formation of additional GaCl{sub 3} and AsCl, as well as soluble/volatile As-based complexes, which are released from the surface depleting the sur- face by arsenic. Comparison of the As 3d and Ga 3d spectra obtained after heating the model interface to room temperature with the corresponding spectra obtained after emersion of the GaAs(100) surface from HCl/2-propanol solution allows to conclude that in HCl solution Cl{sup -} ions attack gallium sites and H{sup +} ions mostly attack arsenic sites. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Triosephosphate isomerase gene promoter variation: -5G/A and -8G/A polymorphisms in clinical malaria groups in two African populations.

    Science.gov (United States)

    Guerra, Mónica; Machado, Patrícia; Manco, Licínio; Fernandes, Natércia; Miranda, Juliana; Arez, Ana Paula

    2015-06-01

    TPI1 promoter polymorphisms occur in high prevalence in individuals from African origin. Malaria-patients from Angola and Mozambique were screened for the TPI1 gene promoter variants rs1800200A>G, (-5G>A), rs1800201G>A, (-8G>A), rs1800202T>G, (-24T>G), and for the intron 5 polymorphism rs2071069G>A, (2262G>A). -5G>A and -8G>A variants occur in 47% and 53% in Angola and Mozambique, respectively while -24T>G was monomorphic for the wild-type T allele. Six haplotypes were identified and -8A occurred in 45% of the individuals, especially associated with the GAG haplotype and more frequent in non-severe malaria groups, although not significantly. The arising and dispersion of -5G>A and -8G>A polymorphisms is controversial. Their age was estimated by analyses of two microsatellite loci, CD4 and ATN1, adjacent to TPI1 gene. The -5G>A is older than -8G>A, with an average estimate of approximately 35,000 years. The -8A variant arose in two different backgrounds, suggesting independent mutational events. The first, on the -5G background, may have occurred in East Africa around 20,800 years ago; the second, on the -5A background, may have occurred in West Africa some 7500 years ago. These estimates are within the period of spread of agriculture and the malaria mosquito vector in Africa, which could has been a possible reason for the selection of -8A polymorphism in malaria endemic countries. Copyright © 2015 Elsevier B.V. All rights reserved.

  18. Ultrasensitive detection of Hg2+ using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    International Nuclear Information System (INIS)

    Cheng, Junjie; Li, Jiadong; Miao, Bin; Wu, Dongmin; Wang, Jine; Pei, Renjun; Wu, Zhengyan

    2014-01-01

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg 2+ . The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg 2+ and thymines were combined. The current response of this Hg 2+ ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg 2+ ions on the surface by the highly specific thymine-Hg 2+ -thymine recognition. The dynamic linear range for Hg 2+ detection has been determined in the concentrations from 10 −14 to 10 −8 M and a detection limit below 10 −14 M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg 2+ detection till now.

  19. Interaction of photosystem 2-LHC2 supercomplexes in adjacent layers of stacked chloroplast thylakoid membranes

    Czech Academy of Sciences Publication Activity Database

    Bumba, Ladislav; Hušák, M.; Vácha, František

    2004-01-01

    Roč. 42, - (2004), s. 193-199 ISSN 0300-3604 R&D Projects: GA MŠk LN00A141; GA ČR GA206/03/1107 Grant - others:GA-(CZ) FRVŠ1292/2002 Keywords : PS2-LHC2 * electron microscopy analysis Subject RIV: CE - Biochemistry Impact factor: 0.734, year: 2004

  20. Monodisperse and core-shell structured SiO{sub 2}-Lu{sub 2}O{sub 3}:Ln{sup 3+} (Ln=Eu, Tb, Dy, Sm, Er, Ho, and Tm) spherical particles: A facile synthesis and luminescent properties

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhenhe, E-mail: xuzh056@163.com [College of Applied Chemistry, Shenyang University of Chemical Technology, Shenyang 100142 (China); Feng, Bin [China National Aviation Fuel Group Corporation, Planning and Development Department, Beijing 100088 (China); Bian, Shasha; Liu, Tao; Wang, Mingli; Gao, Yu; Sun, Di; Gao, Xin [College of Applied Chemistry, Shenyang University of Chemical Technology, Shenyang 100142 (China); Sun, Yaguang, E-mail: yaguangsun@yahoo.com.cn [College of Applied Chemistry, Shenyang University of Chemical Technology, Shenyang 100142 (China)

    2012-12-15

    The core-shell structured SiO{sub 2}-Lu{sub 2}O{sub 3}:Ln{sup 3+} particles were realized by coating the Lu{sub 2}O{sub 3}:Ln{sup 3+} phosphors onto the surface of non-aggregated, monodisperse and spherical SiO{sub 2} particles by the Pechini sol-gel method. The as-synthesized products were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), energy-dispersive X-ray (EDX) spectra, scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), photolumiminescence (PL), and low-voltage cathodoluminescence (CL). The results indicate that the 800 Degree-Sign C annealed sample consists of crystalline Lu{sub 2}O{sub 3} shells and amorphous SiO{sub 2} cores, in spherical shape with a narrow size distribution. The as-obtained particles show strong light emission with different colors corresponding to different Ln{sup 3+} ions under ultraviolet-visible light excitation and low-voltage electron beams excitation, which have potential applications in fluorescent lamps and field emission displays. - Graphical Abstract: Representative SEM and TEM images of the core-shell structured SiO{sub 2}-Lu{sub 2}O{sub 3}:Eu{sup 3+} particles; CIE chromaticity diagram showing the emission colors for SiO{sub 2}-Lu{sub 2}O{sub 3}:Ln{sup 3+}; Multicolor emissions of SiO{sub 2}-Lu{sub 2}O{sub 3}:Ln{sup 3+} particles. Highlights: Black-Right-Pointing-Pointer The core-shell particles were realized by coating the phosphors onto the surface of SiO{sub 2} particles. Black-Right-Pointing-Pointer The sample consists of crystalline Lu{sub 2}O{sub 3} shells and amorphous SiO{sub 2} cores. Black-Right-Pointing-Pointer The particles show different light emission colors corresponding to Ln{sup 3+} ions. Black-Right-Pointing-Pointer They have potential applications in fluorescent lamps and field emission displays.

  1. A high-power narrow-linewidth optical parametric oscillator based on PPMgLN

    International Nuclear Information System (INIS)

    Peng, Y F; Wei, X B; Xie, G; Gao, J R; Li, D M; Wang, W M

    2013-01-01

    A high-power and narrow-linewidth tunable optical parametric oscillator based on PPMgLN is presented. The phase matching type e → e + e is used to avoid the walk-off effect and utilize the maximum nonlinear coefficient d 33 (27.4 pm V −1 ) of the PPMgLN crystal (5 mol% MgO doped). When the pump power of the 1064 nm laser is 50 W and the temperature of the PPMgLN crystal is 100 °C, average output power of 15.8 W is obtained with a slope efficiency of 40.6%. The 1.655 μm signal and 2.98 μm idler output powers are 9.5 W and 6.3 W, respectively. The linewidth of the 1.655 μm signal laser is 1.00 nm before compression and 0.05 nm after compression. The compression ratio is 20. The linewidth of the 2.98 μm idler laser is within 0.30–0.63 nm based on theoretical analysis of the linewidth of the 1064 nm pump laser and 1.655 μm signal laser. The output wavelength can be tuned from 1.6 to 1.8 μm and from 3.1 to 2.7 μm by changing the temperature of the 31.2 μm PPMgLN crystal from 30 to 200 °C. (paper)

  2. Kramers non-magnetic superconductivity in LnNiAsO superconductors.

    Science.gov (United States)

    Li, Yuke; Luo, Yongkang; Li, Lin; Chen, Bin; Xu, Xiaofeng; Dai, Jianhui; Yang, Xiaojun; Zhang, Li; Cao, Guanghan; Xu, Zhu-an

    2014-10-22

    We investigated a series of nickel-based oxyarsenides LnNiAsO (Ln=La, Ce, Pr, Nd, Sm) compounds. CeNiAsO undergoes two successive anti-ferromagnetic transitions at TN1=9.3 K and TN2=7.3 K; SmNiAsO becomes an anti-ferromagnet below TN≃3.5 K; NdNiAsO keeps paramagnetic down to 2 K but orders anti-ferromagnetically below TN≃1.3 K. Superconductivity was observed only in Kramers non-magnetic LaNiAsO and PrNiAsO with Tc=2.7 K and 0.93 K, respectively. The superconductivity of PrNiAsO is further studied by upper critical field and specific heat measurements, which reveal that PrNiAsO is a weakly coupled Kramers non-magnetic superconductor. Our work confirms that the nickel-based oxyarsenide superconductors are substantially different in mechanism to iron-based ones, and are likely to be described by the conventional superconductivity theory.

  3. A comparative study of creep rupture behaviour of modified 316L(N) base metal and 316L(N)/16-8-2 weldment in air and liquid sodium environments

    International Nuclear Information System (INIS)

    Mishra, M.P.; Mathew, M.D.; Mannan, S.L.; Rodriguez, P.; Borgstedt, H.U.

    1997-01-01

    Creep rupture behaviour of modified type 316L(N) stainless steel base metal and weldments prepared with 16-8-2 filler wire has been investigated in air and flowing sodium environments at 823 K. No adverse environmental effects have been noticed due to sodium on the creep rupture behaviour of these weldments for tests up to 10 000 h. Rupture lives of the weldment were higher in the sodium environment than those in air. Rupture lives of the weldments were found to be lower than those of the base metal by a factor of two to five in both air and sodium environments. Minimum creep rates were essentially the same for the weldment as well as for the base metal in both the environments, whereas rupture strain was usually lower for the weldment than that of the base metal. The reduction in area of the weldment specimens increased with increase in stress. Failures in the specimens of weldments were in the weld metal region. Microstructural studies carried out on failed weldment specimens after the creep rupture tests revealed extensive cavitation in the weld metal region in air tested specimens predominantly at the austerite/δ-ferrite interphase. However, no cavitation was observed in specimens tested in sodium. (author)

  4. Isoelectronic Ln doping in p-GaN and its effects on InGaN light-emitting diodes

    International Nuclear Information System (INIS)

    Kim, C. S.; Cheong, H. S.; Kang, D. S.; Kim, J. Y.; Hong, C. H.; Suh, E. K.; Lee, H. J.; Cho, H. K.; Adesida, I.

    2004-01-01

    The effects of isoelectronic In doping in a Mg-doped p-GaN layer on device performance of InGaN light-emitting diodes (LED) were investigated. It was found that there was a decrease of Hall resistivity and contact resistivity in p-GaN with In doping, compared to typical Mg-doped p-GaN. Isoelectronic In doping in p-GaN seems to cause a kind of surfactant effect and/or purification effect similar to the In-doped GaN case, which exhibits a decrease of non-radiative recombination centers and an enhancement of carrier concentration. Light output power and operating voltage were improved by applying an In-doped p-GaN contact layer to the LED.

  5. Metal–organic frameworks assembled from lanthanide and 2,5-pyridinedicaboxylate with cubane-like [Ln{sub 4}(OH){sub 4}] building units

    Energy Technology Data Exchange (ETDEWEB)

    Abdelbaky, Mohammed S.M. [Departamentos de Química Física y Analítica y Química Orgánica e Inorgánica, University of Oviedo—CINN, Oviedo 33006 (Spain); Amghouz, Zakariae, E-mail: amghouz.uo@uniovi.es [Departamentos de Química Física y Analítica y Química Orgánica e Inorgánica, University of Oviedo—CINN, Oviedo 33006 (Spain); Servicios Científico-Técnicos, University of Oviedo—CINN, Oviedo 33006 (Spain); Fernández-Zapico, Eva; García-Granda, Santiago; García, José R. [Departamentos de Química Física y Analítica y Química Orgánica e Inorgánica, University of Oviedo—CINN, Oviedo 33006 (Spain)

    2015-09-15

    tremendous attention due to the unique characteristic of lanthanide cations, such as variable coordination numbers and geometries which often lead to novel complex structures, and also to their magnetic and photoluminescence properties. Herein, three LOFs formulated as [Ln{sub 4}(OH){sub 4}(25p){sub 4}(H{sub 2}O){sub 3}]·H{sub 2}O (Ln=Y, Yb) and [Y{sub 6}(OH){sub 8}(25p){sub 5}(H{sub 2}O){sub 2}] have been obtained by hydrothermal method and characterized, and the photoluminescence properties of the Eu and Tb doped compounds are discussed. - Highlights: • Three novel LnOFs has been synthesized and characterized. • Crystal structures are based on tetranuclear cuban-like [Ln{sub 4}(OH){sub 4}]{sup 8+} clusters. • 25pYb and 25pY-1 are based on isolated [Ln{sub 4}(OH){sub 4}]{sup 8+} clusters. • 25pY-2 is based on infinite inorganic chains built up from [Y{sub 4}(OH){sub 4}]{sup 8+} clusters. • Photoluminescence studies show strong red and green light emissions.

  6. Vliv perinatální zánětlivé reakce na rozvoj psychóze podobného chování: experimentální studie

    Czech Academy of Sciences Publication Activity Database

    Tejkalová, H.; Jelínek, F.; Klaschka, Jan; Šťastný, František

    2007-01-01

    Roč. 11, Suppl. 3 (2007), s. 12-15 ISSN 1211-7579 R&D Projects: GA MŠk(CZ) 1M0517 Institutional research plan: CEZ:AV0Z10300504; CEZ:AV0Z50110509 Keywords : schizofrenie * animální model * lipopolysacharid * mikroglie * prepulzní inhibice Subject RIV: FL - Psychiatry, Sexuology

  7. Phase-Tunable Synthesis of Monodisperse YPO4:Ln3+ (Ln = Ce, Eu, Tb) Micro/Nanocrystals via Topotactic Transformation Route with Multicolor Luminescence Properties.

    Science.gov (United States)

    Shao, Baiqi; Feng, Yang; Zhao, Shuang; Yuan, Senwen; Huo, Jiansheng; Lü, Wei; You, Hongpeng

    2017-06-05

    A novel aqueous-based and phase-selected synthetic strategy toward YPO 4 :Ln 3+ (Ln = Ce, Eu, Tb) micro/nanocrystals was developed by selecting specific precursors whose structure topotactically matches with the target ones. It was found that layered yttrium hydroxide (LYH) induced the formation of hexagonal-phased h-YPO 4 ·0.8H 2 O with the crystalline relationship of [001]LYH//[0001]h-YPO 4 ·0.8H 2 O, while the amorphous Y(OH)CO 3 favored the formation of tetragonal-phased t-YPO 4 . We also systematically investigated the influence of Na 2 CO 3 /NaH 2 PO 4 feeding ratio on the evolutions of morphology and size of the h-YPO 4 ·0.8H 2 O sample, and we also obtained a novel mesoporous nanostructure for t-YPO 4 single crystalline with closed octahedron shape for the first time. Besides, the multicolor and phase-dependent luminescence properties of the as-obtained h-YPO 4 ·0.8H 2 O and t-YPO 4 micro/nanocrystals were also investigated in detail. Our work may provide some new guidance in synthesis of nanocrystals with target phase structure by rational selection of precursor with topotactic structural matching.

  8. Serum expression of HA and LN in lewis rat models of autoimmune myocarditis

    International Nuclear Information System (INIS)

    Han Li'na; Li Tieling; Zhang Yajing; Yang Tingshu; Ding Yu; Guo Shuli; Zhao Xiaoning

    2011-01-01

    Objective: To study the clinical significance of dynamic changes of serum expressions of hyaluronic acid (HA) and laminin (LN) in Lewis rat models of experimental autoimmune myocarditis (EAM). Methods: Fifty Lewis rat models of experimental autoimmune myocarditis (EAM) were established with injection of recombinant cardiac C protein with complete freund adjuvant into two foot-pads plus intraperitoneal injection of pertussis toxin. At 1w, 2w, 4w, 6w and 8w, 10 models were sacrificed each time;cardiac tissues were examined with HE stain for myocardial inflammatory score and examined with picrosirius red stain for myocardial fibrosis score, also, serum HA and LN expressions were determined with RIA. These examinations were performed in 10 undisturbed animals as controls. Results: The myocardial inflammatory scores of the models at 1w were about the same as those in the controls, but the scores rapidly increased from 2w on to 4w then fell gradually. The myocardial fibrosis scores of the models at 1wk were also not much different from those in controls. The fibrosis scores increased rapidly at 4w and maintained at high level up to 8w. The changes of serum expressions of HA and LN roughly paralleled those of myocardial fibrosis scores i. e. rapidly increased at 4w up to 8w. Conclusion: Serum expressions of HA and LN could faithfully reflect the degree of myocardial fibrosis in rat models of EAM. HA and LN were useful markers of myocardial fibrois and were of prognostic importance. (authors)

  9. Existence region of phases of laminated perovskite-like structre of A/sub 2/B/sub 2/O/sub 7/ composition

    Energy Technology Data Exchange (ETDEWEB)

    Sych, A M; Titov, Yu A [Kievskij Gosudarstvennyj Univ. (Ukrainian SSR)

    1982-06-01

    Generalizing the known data for ferroelectrics of A/sub 2/B/sub 2/O/sub 7/ type (LnTi/sub 2/O/sub 7/, in particular) geometrical conditions of existence of laminated perovskite-like structure are determined: 0.603 A < anti Rsub(Bsup(6)) <= 0.665 A, anti Rsub(Asup(12))/Rsub(Bsup(6)) > 2.045. The geometrical conditions presented are necessary but not sufficient. A supposition is made that phases GaLnTiNbO/sub 7/ (Ln = Pr - Eu) and CaLnTiTaO/sub 7/ (Ln = La - Eu) with laminated perovskite-like structure can be prepared under high pressures.

  10. Magnetic, transport and electronic structure properties of U2RuGa8

    International Nuclear Information System (INIS)

    Troc, R.; Bukowski, Z.; SuIkowski, C.; Morkowski, J.A.; Szajek, A.; CheIkowska, G.

    2005-01-01

    A single crystal of uranium ternary intermetallic of U 2 RuGa 8 was grown by the Ga self-flux method. This compound crystallizes in the tetragonal unit cell of space group P4/mmm. Despite the fairly large U-U shortest distance of 4.22A, this compound shows no signs of any magnetic ordering down to 1.9K. Instead, the susceptibility measured along the a and c axes, goes through a broad maximum at T max =220K showing a distinct anisotropy. For j||a there is a weak temperature dependence of the electrical resistivity with a large value of ρ 0 =117μΩcm, while for j||c the ρ(T) curve goes through a maximum at about 130K. The magnetoresistivity measured along two crystallographic directions is small and positive. The thermopower S for the two directions studied is positive and larger along the a-axis. It goes through a broad maximum at 175K reaching a value of 45μV/K. The electronic structure has been calculated by the tight-binding linear muffin-tin orbital method (TB-LMTO) and the results were used in calculation of the valence band near the Fermi level compared next to that found in photoemission experiment. The core 4f spectra are also presented. All the above properties are discussed in view of mixed valence behaviour of uranium atom in this compound

  11. Enhancement of superconductivity near the pressure-induced semiconductor-metal transition in the BiS₂-based superconductors LnO₀.₅F₀.₅BiS₂ (Ln = La, Ce, Pr, Nd).

    Science.gov (United States)

    Wolowiec, C T; White, B D; Jeon, I; Yazici, D; Huang, K; Maple, M B

    2013-10-23

    Measurements of electrical resistivity were performed between 3 and 300 K at various pressures up to 2.8 GPa on the BiS2-based superconductors LnO0.5F0.5BiS2 (Ln=Pr, Nd). At lower pressures, PrO0.5F0.5BiS2 and NdO0.5F0.5BiS2 exhibit superconductivity with critical temperatures Tc of 3.5 and 3.9 K, respectively. As pressure is increased, both compounds undergo a transition at a pressure Pt from a low Tc superconducting phase to a high Tc superconducting phase in which Tc reaches maximum values of 7.6 and 6.4 K for PrO0.5F0.5BiS2 and NdO0.5F0.5BiS2, respectively. The pressure-induced transition is characterized by a rapid increase in Tc within a small range in pressure of ∼0.3 GPa for both compounds. In the normal state of PrO0.5F0.5BiS2, the transition pressure Pt correlates with the pressure where the suppression of semiconducting behaviour saturates. In the normal state of NdO0.5F0.5BiS2, Pt is coincident with a semiconductor-metal transition. This behaviour is similar to the results recently reported for the LnO0.5F0.5BiS2 (Ln=La, Ce) compounds. We observe that Pt and the size of the jump in Tc between the two superconducting phases both scale with the lanthanide element in LnO0.5F0.5BiS2 (Ln=La, Ce, Pr, Nd).

  12. Kulturní krajina Černínů z Chudenic. Obrazová mapa panství Lnáře (1698) a Dietzlerův prospekt Lnář (1725)

    Czech Academy of Sciences Publication Activity Database

    Šimůnek, Robert

    2015-01-01

    Roč. 84, č. 1 (2015), s. 410-450 ISSN 0323-004X R&D Projects: GA ČR(CZ) GBP410/12/G113 Institutional support: RVO:67985963 Keywords : historical landscape * prospect of landscape * old maps * vedute * nobility * representation * Černín of Chudenice * Lnáře Subject RIV: AB - History

  13. Thermochemistry of rare earth doped uranium oxides Ln{sub x}U{sub 1−x}O{sub 2−0.5x+y} (Ln = La, Y, Nd)

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Lei; Navrotsky, Alexandra, E-mail: anavrotsky@ucdavis.edu

    2015-10-15

    Lanthanum, yttrium, and neodymium doped uranium dioxide samples in the fluorite structure have been synthesized, characterized in terms of metal ratio and oxygen content, and their enthalpies of formation measured by high temperature oxide melt solution calorimetry. For oxides doped with 10–50 mol % rare earth (Ln) cations, the formation enthalpies from constituent oxides (LnO{sub 1.5}, UO{sub 2} and UO{sub 3} in a reaction not involving oxidation or reduction) become increasingly exothermic with increasing rare earth content, while showing no significant dependence on the varying uranium oxidation state. The oxidation enthalpy of Ln{sub x}U{sub 1−x}O{sub 2−0.5x+y} is similar to that of UO{sub 2} to UO{sub 3} for all three rare earth doped systems. Though this may suggest that the oxidized uranium in these systems is energetically similar to that in the hexavalent state, thermochemical data alone can not constrain whether the uranium is present as U{sup 5+}, U{sup 6+}, or a mixture of oxidation states. The formation enthalpies from elements calculated from the calorimetric data are generally consistent with those from free energy measurements. - Highlights: • We synthesize, characterize Ln{sub x}U{sub 1−x}O{sub 2−0.5x+y} solid solutions (Ln = La, Y, Nd). • Formation enthalpies become more exothermic with increasing rare earth content. • Oxidation enthalpy of Ln{sub x}U{sub 1−x}O{sub 2−0.5x+y} is similar to that of UO{sub 2} to UO{sub 3}. • Direct calorimetric measurements are in good agreement with free energy data.

  14. New ways to a series of parent representatives of the eight-, nine-, and ten-vertex monocarbaborane family

    Czech Academy of Sciences Publication Activity Database

    Brellochs, B.; Bačkovský, Jaroslav; Štíbr, Bohumil; Jelínek, Tomáš; Holub, Josef; Bakardjiev, Mario; Hnyk, Drahomír; Hofmann, M.; Cásařová, I.; Wrackmeyer, B.

    -, č. 18 (2004), s. 3605-3611 ISSN 1434-1948 R&D Projects: GA AV ČR IBS4032007; GA MŠk LN00A028 Institutional research plan: CEZ:AV0Z4032918 Keywords : boranes * carboranes * geometry optimization Subject RIV: CA - Inorganic Chemistry Impact factor: 2.336, year: 2004

  15. Systems Ln-Fe-O ( Ln=Eu, Gd): thermodynamic properties of ternary oxides using solid-state electrochemical cells

    Science.gov (United States)

    Parida, S. C.; Rakshit, S. K.; Dash, S.; Singh, Ziley; Prasad, R.; Venugopal, V.

    2003-05-01

    The standard molar Gibbs energies of formation of LnFeO 3(s) and Ln3Fe 5O 12(s) where Ln=Eu and Gd have been determined using solid-state electrochemical technique employing different solid electrolytes. The reversible e.m.f.s of the following solid-state electrochemical cells have been measured in the temperature range from 1050 to 1255 K. Cell (I): (-)Pt / { LnFeO 3(s)+ Ln2O 3(s)+Fe(s)} // YDT/CSZ // {Fe(s)+Fe 0.95O(s)} / Pt(+); Cell (II): (-)Pt/{Fe(s)+Fe 0.95O(s)}//CSZ//{ LnFeO 3(s)+ Ln3Fe 5O 12(s)+Fe 3O 4(s)}/Pt(+); Cell (III): (-)Pt/{ LnFeO 3(s)+ Ln3Fe 5O 12(s)+Fe 3O 4(s)}//YSZ//{Ni(s)+NiO(s)}/Pt(+); and Cell(IV):(-)Pt/{Fe(s)+Fe 0.95O(s)}//YDT/CSZ//{ LnFeO 3(s)+ Ln3Fe 5O 12(s)+Fe 3O 4(s)}/Pt(+). The oxygen chemical potentials corresponding to the three-phase equilibria involving the ternary oxides have been computed from the e.m.f. data. The standard Gibbs energies of formation of solid EuFeO 3, Eu 3Fe 5O 12, GdFeO 3 and Gd 3Fe 5O 12 calculated by the least-squares regression analysis of the data obtained in the present study are given by Δ fG°m(EuFeO 3, s) /kJ mol -1 (± 3.2)=-1265.5+0.2687( T/K) (1050 ⩽ T/K ⩽ 1570), Δ fG°m(Eu 3Fe 5O 12, s)/kJ mol -1 (± 3.5)=-4626.2+1.0474( T/K) (1050 ⩽ T/K ⩽ 1255), Δ fG°m(GdFeO 3, s) /kJ mol -1 (± 3.2)=-1342.5+0.2539( T/K) (1050 ⩽ T/K ⩽ 1570), and Δ fG°m(Gd 3Fe 5O 12, s)/kJ·mol -1 (± 3.5)=-4856.0+1.0021( T/K) (1050 ⩽ T/K ⩽ 1255). The uncertainty estimates for Δ fG°m include the standard deviation in the e.m.f. and uncertainty in the data taken from the literature. Based on the thermodynamic information, oxygen potential diagrams for the systems Eu-Fe-O and Gd-Fe-O and chemical potential diagrams for the system Gd-Fe-O were computed at 1250 K.

  16. Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p-n diodes and InGaN LEDs

    Science.gov (United States)

    Mughal, Asad J.; Young, Erin C.; Alhassan, Abdullah I.; Back, Joonho; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

    2017-12-01

    Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal-organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p-n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm-3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10-3-3.4 × 10-3 Ω·cm2, and the turn-on voltages of the diodes.

  17. Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs

    KAUST Repository

    Mughal, Asad J.

    2017-11-27

    Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal–organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p–n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm−3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10−3–3.4 × 10−3 Ωcenterdotcm2, and the turn-on voltages of the diodes.

  18. Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs

    KAUST Repository

    Mughal, Asad J.; Young, Erin C.; Alhassan, Abdullah I.; Back, Joonho; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

    2017-01-01

    Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal–organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p–n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm−3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10−3–3.4 × 10−3 Ωcenterdotcm2, and the turn-on voltages of the diodes.

  19. Crystal structure and phase transition studies in perovskite-type oxides using powder-diffraction techniques and symmetry-mode analysis : SrLnMRuO6 (Ln=La,Pr,Nd; M=Zn,Co,Mg,Ni,Fe) and ALn2CuTi2O9 (A=Ca,Ba; Ln=La,Pr,Nd,Sm)

    OpenAIRE

    Iturbe Zabalo, Edurne

    2013-01-01

    La tesis se ha centrado en la síntesis y caracterización estructural de materiales tipo perovskita: SrLnMRuO6 (Ln=La,Pr,Nd; M=Zn,Co,Mg,Ni,Fe) y ALn2CuTi2O9 (A=Ca,Ba; Ln=La,Pr,Nd,Sm). El estudio de las estructuras de los materiales se ha realizado mediante el análisis de los patrones de difracción en polvo de rayos-X, sincrotrón y/o neutrones. En el refinamiento por el método de Rietveld de las estructuras se han sustituido las coordenadas atómicas (el método más común), por coordenadas colect...

  20. Electronic and magnetic properties of quasi-skutterudite PrCo2Ga8 compound

    Science.gov (United States)

    Ogunbunmi, Michael O.; Sondezi, Buyisiwe M.; Nair, Harikrishnan S.; Strydom, André M.

    2018-05-01

    PrCo2Ga8 is an orthorhombic quasi-skutterudite type compound which crystallizes in the CaCo2Al8 structure type, with space group Pbam (No. 55). The Pr3+ ion has a site symmetry of Cs which predicts a crystal electric field (CEF) level splitting into 9 singlets for J = 4. However, a phase transition at Tm = 1.28 K is observed in electrical resistivity and specific heat results and is reported in this paper. The electrical resistivity shows an upturn below Tm due to the superzone-gap formation. This transition is tuneable in fields and is suppressed to lower temperatures with applied magnetic fields. The electronic specific heat Cp(T) / T increases below Tm and reaches a value of 7.37 J/(mol K2) at 0.4 K. The Sommerfeld coefficient, γ extracted from the low temperature analysis of C4f(T) / T is 637 mJ/(mol K2) indicating a possible mass enhancement of the quasiparticles. The calculated entropy value of 3.05 J/(mol K) is recovered around Tm exhibiting almost 53% of Rln2, where R is the universal gas constant. Magnetic susceptibility results obeys the Curie-Weiss law for data above 100 K with an estimated effective magnetic moment, μeff = 3.37 μB/Pr and Weiss temperature, θp = -124 K.

  1. A series of novel lanthanide carboxyphosphonates with a 3D framework structure: synthesis, structure, and luminescent and magnetic properties.

    Science.gov (United States)

    Chen, Kai; Dong, Da-Peng; Sun, Zhen-Gang; Jiao, Cheng-Qi; Li, Chao; Wang, Cheng-Lin; Zhu, Yan-Yu; Zhao, Yan; Zhu, Jiang; Sun, Shou-Hui; Zheng, Ming-Jing; Tian, Hui; Chu, Wei

    2012-08-28

    By introduction of 1,4-benzenedicarboxylic acid as the second organic ligand, a series of novel lanthanide carboxyphosphonates with a 3D framework structure, namely, [Ln(3)(H(2)L)(HL)(2)(bdc)(2)(H(2)O)]·7H(2)O (Ln = La (1), Ce (2), Pr (3), Nd (4), Sm (5), Eu (6), Gd (7), Tb (8); H(3)L = H(2)O(3)PCH(2)NC(5)H(9)COOH; H(2)bdc = HOOCC(6)H(4)COOH) have been synthesized under hydrothermal conditions. Compounds are isostructural and feature a 3D framework in which Ln(III) polyhedra are interconnected by bridging {CPO(3)} tetrahedra into 2D inorganic layers parallel to the ab plane. The organic groups of H(2)L(-) are grafted on the two sides of the layer. These layers are further cross-linked by the bdc(2-) ligands from one layer to the Ln atoms from the other into a pillared-layered architecture with one-dimensional channel system along the a axis. The thermal stability of compounds has been investigated. Luminescent properties of compounds , and the magnetic properties of compound have also been studied.

  2. Phase transition of the orthorhombic fluorite-related compounds Ln{sub 3}IrO{sub 7} (Ln = Pr, Nd, Sm, Eu)

    Energy Technology Data Exchange (ETDEWEB)

    Hinatsu, Yukio, E-mail: hinatsu@sci.hokudai.ac.j [Division of Chemistry, Graduate School of Science, Hokkaido University, Sapporo 060-0810 (Japan); Doi, Yoshihiro; Nishimine, Hiroaki; Wakeshima, Makoto [Division of Chemistry, Graduate School of Science, Hokkaido University, Sapporo 060-0810 (Japan); Sato, Mineo [Department of Chemistry and Chemical Engineering, Faculty of Engineering, Niigata University, 8050 Ikarashi 2-nocho, Niigata 950-2181 (Japan)

    2009-12-04

    Rare earth iridium oxides Ln{sub 3}IrO{sub 7} (Ln = Pr, Nd, Sm, and Eu) were prepared and their structures were determined by X-ray diffraction measurements. At room temperature, Pr{sub 3}IrO{sub 7} crystallized in an orthorhombic superstructure of cubic fluorite with space group Cmcm. The differential thermal analysis (DTA) and specific heat measurements for Ln{sub 3}IrO{sub 7} (Ln = Pr, Nd, Sm, and Eu) showed a phase transition at 262, 342, 420, and 485 K, respectively. At low temperatures, Ln{sub 3}IrO{sub 7} crystallized in a monoclinic structure with the space group P2{sub 1}/n. The transition temperatures increased with decreasing the ionic radius of rare earths, which indicates that the transition is stress-induced and occurs with the lattice contraction on cooling. These results for Ln{sub 3}IrO{sub 7} were compared with the phase transitions observed for Ln{sub 3}MoO{sub 7}, Ln{sub 3}RuO{sub 7}, Ln{sub 3}ReO{sub 7}, and Ln{sub 3}OsO{sub 7}.

  3. Ultrasonic investigation of GaV{sub 4}S{sub 8}

    Energy Technology Data Exchange (ETDEWEB)

    Cong, P.T.; Zherlitsyn, S.; Wosnitza, J. [Hochfeld-Magnetlabor Dresden, Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden (Germany); Mombetsu, S. [Hochfeld-Magnetlabor Dresden, Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden (Germany); Department of Physics, Hokkaido University (Japan); Tsurkan, V.; Loidl, A. [Institute of Physics, University of Augsburg, 86159 Augsburg (Germany)

    2015-07-01

    In recent years, transition metal-chalcogenides with the cubic GaMo{sub 4}S{sub 8}-type structure have attracted much interest because of their fascinating properties such as superconductivity under pressure, metal-insulator transition, 4d ferromagnetism and various structural and magnetic instabilities at low temperatures. These phenomena reflect the strong coupling of structural, electronic and magnetic degrees of freedom in this system. Here, we present results of ultrasound investigations performed on a high-quality single crystal of the tetrahedral magnetic-cluster material GaV{sub 4}S{sub 8}. The temperature dependence of the sound velocity and attenuation shows a huge anomaly at T{sub s} = 44 K followed by a pronounce feature at T{sub c} = 12.5 K related to a structural transition and ferromagnetic ordering, respectively, as known from previous magnetic-susceptibility and specific-heat results. A field-induced transition at temperatures below T{sub c} reveals a complex magnetic structure of GaV{sub 4}S{sub 8}, suggesting a competition of several interactions. Based on these measurements, we mapped out the B-T phase diagram of GaV{sub 4}S{sub 8} and discuss the role of the lattice degrees of freedom in this material.

  4. Synthesis and electronic properties of LnRhAsO and LnIrAsO compositions

    International Nuclear Information System (INIS)

    Muir, Sean; Sleight, A.W.; Subramanian, M.A.

    2011-01-01

    The synthesis and characterization of the new compositions LnRhAsO (Ln=Ce, Nd) and LnIrAsO (Ln=La, Ce, Nd) are reported. These compounds crystallize in the ZrCuSiAs type structure, isostructural to iron pnictide LnFeAsO materials. Upon substitution of Rh for Fe, both a and c lattice parameters increase relative to 3d transition metal compounds; however, when Ir is substituted for Rh the a-parameter decreases slightly while the c-parameter expands. The decrease in a lattice parameter corresponds to a short metal-metal distance in Ir compounds. CeRhAsO and CeIrAsO compositions show abrupt decreases in resistivity at 7 and 10 K, respectively, coinciding with a small shift in magnetization at the transition temperature. - Graphical abstract: LnIrAsO (Ln=La, Ce, Nd) and LnRhAsO (Ln=Ce, Rh) have been synthesized. These new transition metal oxypnictide compositions are isostructural to LaFeAsO. The 5d Ir compositions demonstrate a shorter metal-metal interaction than the 4d Rh compositions. Highlights: → LnIrAsO (Ln=La, Ce, Nd) and LnRhAsO (Ln=Ce, Nd) have been synthesized. → Ir compositions show a decreased a-parameter and increased c-parameter relative to Rh compositions. → All LnIrAsO and LnRhAsO compositions are metallic while CeIrAsO and CeRhAsO show a sudden drop in resistivity at 10 and 7 K, respectively.

  5. La0⋅ 9Sr0⋅ 1Ga0⋅ 8M0⋅ 2O3–δ (M= Mn, Co, Ni, Cu or Zn ...

    Indian Academy of Sciences (India)

    Perovskite oxides of the general formula, La0.9Sr0.1Ga0.8M0.2O3– for M = Mn, Co, Ni, Cu and Zn, have been prepared and investigated. All the oxides exhibit high electrical conductivities ( ∼ 10–2 S/cm at 800°C) comparable to that of the best perovskite oxide ion conductor, La0.9Sr0.1Ga0.8Mg0.2O2.85 (LSGM) ( ...

  6. Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Junjie [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China); Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Li, Jiadong; Miao, Bin; Wu, Dongmin, E-mail: dmwu2008@sinano.ac.cn [i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wang, Jine; Pei, Renjun, E-mail: rjpei2011@sinano.ac.cn [Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wu, Zhengyan, E-mail: zywu@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China)

    2014-08-25

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup −14} to 10{sup −8} M and a detection limit below 10{sup −14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

  7. Membránové vlastnosti neuronů, gliových a kmenových buněk v centrálním nervovém systému

    Czech Academy of Sciences Publication Activity Database

    Chvátal, Alexandr; Syková, Eva

    2001-01-01

    Roč. 1, č. 9 (2001), s. 37-40 ISSN 1210-6755 R&D Projects: GA MŠk LN00A065; GA ČR GA305/99/0655; GA ČR GA309/99/0657 Institutional research plan: CEZ:AV0Z5039906 Keywords : central nervous system Subject RIV: FH - Neurology

  8. Synthesis of functionalized cobaltacarboranes based on the closo-[(1,2-C2B9H11)(2)-3,3 '-Co](-) ion bearing polydentate ligands for separation of M3+ cations from nuclear waste solutions. Electrochemical and liquid-liquid extraction study of selective transfer of M3+ metal cations to an organic phase. Molecular structure of the closo-[(8-(2-CH3O-C5H4-O)-(CH2CH2O)(2)-1,2-C2B9H10)-(1 ',2 '-C2B9H11)-3,3 '-Co]Na determined by X-ray diffraction analysis

    Czech Academy of Sciences Publication Activity Database

    Plešek, Jaromír; Grüner, Bohumír; Heřmánek, Stanislav; Báča, Jiří; Mareček, Vladimír; Jänchenová, Hana; Lhotský, Alexandr; Holub, Karel; Selucký, P.; Rais, J.; Císařová, I.; Čáslavský, Josef

    2002-01-01

    Roč. 21, 9-10 (2002), s. 975-986 ISSN 0277-5387 R&D Projects: GA MŠk LN00A028; GA MŠk LB98233; GA ČR GA104/01/0142; GA ČR GA203/99/M037; GA ČR GA104/99/1096 Institutional research plan: CEZ:AV0Z4032918 Keywords : carboranes * carba metallaboranes * dicarbollides Subject RIV: CA - Inorganic Chemistry Impact factor: 1.414, year: 2002

  9. Expression and potential role of fibroblast growth factor 2 and its receptors in human embryonic stem cells

    Czech Academy of Sciences Publication Activity Database

    Dvořák, Petr; Dvořáková, D.; Košková, S.; Vidinská, M.; Najvirtová, M.; Krekáč, D.; Hampl, Aleš

    2005-01-01

    Roč. 23, č. 8 (2005), s. 1200-1211 ISSN 1066-5099 R&D Projects: GA ČR(CZ) GA301/03/1122; GA ČR(CZ) GA305/05/0434; GA MŠk(CZ) LN00A065 Institutional research plan: CEZ:AV0Z50390512 Keywords : growth factor * human embryonic stem cells Subject RIV: EB - Genetics ; Molecular Biology Impact factor: 6.094, year: 2005

  10. Luminescence properties of Ca2 Ga2 SiO7 :RE phosphors for UV white-light-emitting diodes.

    Science.gov (United States)

    Jiao, Mengmeng; Lv, Wenzhen; Lü, Wei; Zhao, Qi; Shao, Baiqi; You, Hongpeng

    2015-03-16

    A series of Eu(2+) -, Ce(3+) -, and Tb(3+) -doped Ca2 Ga2 SiO7 phosphors is synthesized by using a high-temperature solid-state reaction. The powder X-ray diffraction and structure refinement data indicate that our prepared phosphors are single phased and the phosphor crystalizes in a tetrahedral system with the ${P\\bar 42m}$ (113) space group. The Eu(2+) - and Ce(3+) -doped phosphors both have broad excitation bands, which match well with the UV light-emitting diodes chips. Under irradiation of λ=350 nm, Ca2 Ga2 SiO7 :Eu(2+) and Ca2 Ga2 SiO7 :Ce(3+) , Li(+) have green and blue emissions, respectively. Luminescence of Ca2 Ga2 SiO7 :Tb(3+) , Li(+) phosphor varies with the different Tb(3+) contents. The thermal stability and energy-migration mechanism of Ca2 Ga2 SiO7 :Eu(2+) are also studied. The investigation results indicate that the prepared Ca2 Ga2 SiO7 :Eu(2+) and Ca2 Ga2 SiO7 :Ce(3+) , Li(+) samples show potential as green and blue phosphors, respectively, for UV-excited white-light-emitting diodes. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. New Perspectives for Old Clusters: Anderson-Evans Anions as Building Blocks of Large Polyoxometalate Frameworks in a Series of Heterometallic 3 d-4 f Species.

    Science.gov (United States)

    Artetxe, Beñat; Reinoso, Santiago; San Felices, Leire; Lezama, Luis; Gutiérrez-Zorrilla, Juan M; Vicent, Cristian; Haso, Fadi; Liu, Tianbo

    2016-03-18

    A series of nine [Sb7W36O133Ln3M2(OAc)(H2O)8](17-) heterometallic anions (Ln3M2; Ln=La-Gd, M=Co; Ln=Ce, M=Ni and Zn) have been obtained by reacting 3 d metal disubstituted Krebs-type tungstoantimonates(III) with early lanthanides. Their unique tetrameric structure contains a novel {MW9O33} capping unit formed by a planar {MW6O24} fragment to which three {WO2} groups are condensed to form a tungstate skeleton identical to that of a hypothetical trilacunary derivative of the ɛ-Keggin cluster. It is shown, for the first time, that classical Anderson-Evans {MW6O24} anions can act as building blocks to construct purely inorganic large frameworks. Unprecedented reactivity in the outer ring of these disk-shaped species is also revealed. The Ln3M2 anions possess chirality owing to a {Sb4O4} cluster being encapsulated in left- or right-handed orientations. Their ability to self-associate in blackberry-type vesicles in solution has been assessed for the Ce3Co2 derivative. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Spin injection between epitaxial Co2.4Mn1.6Ga and an InGaAs quantum well

    DEFF Research Database (Denmark)

    Hickey, M.C.; Damsgaard, Christian Danvad; Farrer, I

    2005-01-01

    Electrical spin injection in a narrow [100] In0.2Ga0.8As quantum well in a GaAs p-i-n optical device is reported. The quantum well is located 300 nm from an AlGaAs Schottky barrier and this system is used to compare the efficiencies and temperature dependences of spin injection from Fe and the He...

  13. The phase transition of the incommensurate phases β-Ln(PO3)3(Ln=Y,Tb...Yb), crystal structures of α-Ln(PO3)3(Ln=Y,Tb...Yb) and Sc(PO3)3

    International Nuclear Information System (INIS)

    Hoeppe, Hennig A.

    2009-01-01

    The incommensurately modulated room-temperature phases β-Ln(PO 3 ) 3 (Ln=Y,Tb...Yb) undergo a topotactic phase transition monitored by vibrational spectroscopy below 180 K leading to α-Ln(PO 3 ) 3 (Ln=Y,Dy...Yb), above 200 K the incommensurate phases are reobtained. The low-temperature phases exhibit a new structure type (α-Dy(PO 3 ) 3 ,P2 1 /c,Z=12,a=14.1422(6),b=20.0793(9),c=10.1018(4)A, β=127.532(3) 0 ). α-Tb(PO 3 ) 3 is isotypic with Gd(PO 3 ) 3 (α-Tb(PO 3 ) 3 ,I2/a,Z=16,a=25.875(6),b=13.460(3),c=10.044(2)A, β=119.13(3) 0 ). The symmetry relations between the involved phases of the phase transition are discussed. The crystal structure of Sc(PO 3 ) 3 is isotypic with that of Lu(PO 3 ) 3 and C-type phosphates. The polyphosphates consist of infinite zig-zag chains of corner-sharing PO 4 tetrahedra, the cations are coordinated sixfold in an almost octahedral arrangement. To confirm the quality of the determined crystal structures the deviation of the phosphate tetrahedra from ideal symmetry was determined and discussed. - Abstract: Basic structure from which all crystal structures of the late lanthanoids' polyphosphates at room temperature and below can be derived.

  14. Color tunable emission in Ce3+ and Tb3+ co-doped Ba2Ln(BO3)2Cl (Ln=Gd and Y) phosphors for white light-emitting diodes.

    Science.gov (United States)

    Zhang, Niumiao; Guo, Chongfeng; Jing, Heng; Jeong, Jung Hyun

    2013-12-01

    Ce(3+) and Tb(3+) co-doped Ba2Ln(BO3)2Cl (Ln=Y and Gd) green emitting phosphors were prepared by solid state reaction in reductive atmosphere. The emission and excitation spectra as well as luminescence decays were investigated, showing the occurrence of efficient energy transfer from Ce(3+) to Tb(3+) in this system. The phosphors exhibit both a blue emission from Ce(3+) and a green emission from Tb(3+) under near ultraviolet light excitation with 325-375 nm wavelength. Emission colors of phosphors could be tuned from deep blue through cyan to green by adjusting the Tb(3+) concentrations. The energy transfer efficiency and emission intensity of Ba2Y(BO3)2Cl:Ce(3+), Tb(3+) precede those of Ba2Gd(BO3)2Cl:Ce(3+), Tb(3+), and the sample Ba2Y(BO3)2Cl:0.03Ce(3+), 0.10Tb(3+) is the best candidate for n-UV LEDs. Copyright © 2013 Elsevier B.V. All rights reserved.

  15. Series of mixed uranyl-lanthanide (Ce, Nd) organic coordination polymers with aromatic polycarboxylates linkers.

    Science.gov (United States)

    Mihalcea, Ionut; Volkringer, Christophe; Henry, Natacha; Loiseau, Thierry

    2012-09-17

    Three series of mixed uranyl-lanthanide (Ce or Nd) carboxylate coordination polymers have been successfully synthesized by means of a hydrothermal route using either conventional or microwave heating methods. These compounds have been prepared from mixtures of uranyl nitrate, lanthanide nitrate together with phthalic acid (1,2), pyromellitic acid (3,4), or mellitic acid (5,6) in aqueous solution. The X-ray diffraction (XRD) single-crystal revealed that the phthalate complex (UO(2))(4)O(2)Ln(H(2)O)(7)(1,2-bdc)(4)·NH(4)·xH(2)O (Ln = Ce(1), Nd(2); x = 1 for 1, x = 0 for 2), is based on the connection of tetranuclear uranyl-centered building blocks linked to discrete monomeric units LnO(2)(H(2)O)(7) via the organic species to generate infinite chains, intercalated by free ammonium cations. The pyromellitate phase (UO(2))(3)Ln(2)(H(2)O)(12)(btec)(3)·5H(2)O (Ce(3), Nd(4)) contains layers of monomeric uranyl-centered hexagonal and pentagonal bipyramids linked via the carboxylate arms of the organic molecules. The three-dimensionality of the structure is ensured by the connection of remaining free carboxylate groups with isolated monomeric units LnO(2)(H(2)O)(7). The network of the third series (UO(2))(2)(OH)Ln(H(2)O)(7)(mel)·5H(2)O (Ce(5), Nd(6)) is built up from dinuclear uranyl units forming layers through connection with the mellitate ligands, which are further linked to each other through discrete monomers LnO(3)(H(2)O)(6). The thermal decomposition of the various coordination complexes led to the formation of mixed uranium-lanthanide oxide, with the fluorite-type structure at 1500 °C (for 1, 2) or 1400 °C for 3-6. Expected U/Ln ratio from the crystal structures were observed for compounds 1-6.

  16. Structural and electrochemical properties of La 0.8Sr 0.2Ga 1-xFe xO 3

    Science.gov (United States)

    Mori, Kazuhiro; Onodera, Yohei; Kiyanagi, Ryoji; Richardson, James W.; Itoh, Keiji; Sugiyama, Masaaki; Kamiyama, Takashi; Fukunaga, Toshiharu

    2009-02-01

    Mixed ionic-electronic conductor of Fe doped lanthanum gallate, La 0.8Sr 0.2Ga 1-xFe xO 3, has been studied by the dc four-probe method and the neutron powder diffraction. In the electrical conductivity measurement at RT, insulator-metal transition-like phenomenon was observed at around x˜0.35; this suggests an existence of the percolation limit for the electronic conductivity. Simultaneously, a bond length between O atoms, lO-O, in a MO 6 octahedron (M dbnd Ga 1-xFe x) drastically expands over x˜0.4, according to the result of crystal structure refinement based on the hexagonal phase. Such a drastic expansion in the lO-O would induce the decrease in the oxygen ionic conductivity.

  17. The phase transition of the incommensurate phases β-Ln(PO3)3(Ln=Y,Tb…Yb), crystal structures of α-Ln(PO3)3(Ln=Y,Tb…Yb) and Sc(PO3)3

    Science.gov (United States)

    Höppe, Hennig A.

    2009-07-01

    The incommensurately modulated room-temperature phases β-Ln(PO3)3(Ln=Y,Tb…Yb) undergo a topotactic phase transition monitored by vibrational spectroscopy below 180 K leading to α-Ln(PO3)3(Ln=Y,Dy…Yb), above 200 K the incommensurate phases are reobtained. The low-temperature phases exhibit a new structure type (α-Dy(PO3)3, P21/c, Z=12,a=14.1422(6), b=20.0793(9),c=10.1018(4) A˚, β=127.532(3)∘). α-Tb(PO3)3 is isotypic with Gd(PO3)3(α-Tb(PO3)3, I2/a,Z=16,a=25.875(6), b=13.460(3), c=10.044(2) A˚, β=119.13(3)∘). The symmetry relations between the involved phases of the phase transition are discussed. The crystal structure of Sc(PO3)3 is isotypic with that of Lu(PO3)3 and C-type phosphates. The polyphosphates consist of infinite zig-zag chains of corner-sharing PO4 tetrahedra, the cations are coordinated sixfold in an almost octahedral arrangement. To confirm the quality of the determined crystal structures the deviation of the phosphate tetrahedra from ideal symmetry was determined and discussed.

  18. ALnS2:RE (A=K, Rb; Ln=La, Gd, Lu, Y): New optical materials family

    International Nuclear Information System (INIS)

    Jarý, V.; Havlák, L.; Bárta, J.; Mihóková, E.; Buryi, M.; Nikl, M.

    2016-01-01

    In the presented review paper, new potentially interesting material family, RE-doped ternary sulfides ALnS 2 (RE=Ce, Pr, Sm, Eu, Tb, Tm; A=Rb, K; Ln=La, Gd, Lu, Y) is discussed. Their synthesis is described and the structural and optical properties, characterized by methods of X-ray diffraction, time-resolved luminescence spectroscopy and electron paramagnetic resonance, are summarized and reviewed especially with respect to the influence of their composition. All samples discussed were synthesized in the form of transparent crystalline hexagonal platelets by chemical reaction under the flow of hydrogen sulfide. Their luminescence characteristics, including absorption, radioluminescence, photoluminescence excitation and emission spectra and decay kinetics, were measured and evaluated in a broad temperature (8–800 K) and concentration (0.002–20% of dopants) range. The application potential of mentioned compounds in the field of white LED solid state lightings or X-ray phosphors is thoroughly discussed. - Highlights: • RE-doped ALnS 2 (A=K, Rb; Ln=La, Gd, Lu, Y) were synthesized. • Their optical characteristics are summarized. • Concentration and temperature dependences of luminescence features investigated. • EPR technique is employed to explain Eu 2+ incorporation into KLuS 2 host. • The application potential in white LED and X-ray phosphors is discussed.

  19. Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT

    Science.gov (United States)

    Panda, J.; Jena, K.; Swain, R.; Lenka, T. R.

    2016-04-01

    We have developed a physics based analytical model for the calculation of threshold voltage, two dimensional electron gas (2DEG) density and surface potential for AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMT). The developed model includes important parameters like polarization charge density at oxide/AlGaN and AlGaN/GaN interfaces, interfacial defect oxide charges and donor charges at the surface of the AlGaN barrier. The effects of two different gate oxides (Al2O3 and HfO2) are compared for the performance evaluation of the proposed MOSHEMT. The MOSHEMTs with Al2O3 dielectric have an advantage of significant increase in 2DEG up to 1.2 × 1013 cm-2 with an increase in oxide thickness up to 10 nm as compared to HfO2 dielectric MOSHEMT. The surface potential for HfO2 based device decreases from 2 to -1.6 eV within 10 nm of oxide thickness whereas for the Al2O3 based device a sharp transition of surface potential occurs from 2.8 to -8.3 eV. The variation in oxide thickness and gate metal work function of the proposed MOSHEMT shifts the threshold voltage from negative to positive realizing the enhanced mode operation. Further to validate the model, the device is simulated in Silvaco Technology Computer Aided Design (TCAD) showing good agreement with the proposed model results. The accuracy of the developed calculations of the proposed model can be used to develop a complete physics based 2DEG sheet charge density and threshold voltage model for GaN MOSHEMT devices for performance analysis.

  20. Nanostructured LnBaCo2O6− (Ln = Sm, Gd with layered structure for intermediate temperature solid oxide fuel cell cathodes

    Directory of Open Access Journals (Sweden)

    Augusto E. Mejía Gómez

    2017-04-01

    Full Text Available In this work, we present the combination of two characteristics that are beneficial for solid oxide fuel cell (SOFC cathodic performance in one material. We developed and evaluated for the first time nanostructured layered perovskites of formulae LnBaCo2O6-d with Ln = Sm and Gd (SBCO and GBCO, respectively as SOFC cathodes, finding promising electrochemical properties in the intermediate temperature range. We obtained those nanostructures by using porous templates to confine the chemical reagents in regions of 200-800 nm. The performance of nanostructured SBCO and GBCO cathodes was analyzed by electrochemical impedance spectroscopy technique under different operating conditions using Gd2O3-doped CeO2 as electrolyte. We found that SBCO cathodes displayed lower area-specific resistance than GBCO ones, because bulk diffusion of oxide ions is enhanced in the former. We also found that cathodes synthesized using smaller template pores exhibited better performance.

  1. Local structure analysis of Cu(In,Ga)Se{sub 2} by X-ray fluorescence holography

    Energy Technology Data Exchange (ETDEWEB)

    Shirakata, Sho; Kitamura, Yuma [Faculty of Engineering, Ehime University, Matsuyama 790-8577 (Japan); Happo, Naohisa [Graduate School of Information Sciences, Hiroshima City University, Hiroshima 731-3194 (Japan); Hosokawa, Shinya [Department of Physics, Kumamoto University, Kumamoto 860-8555 (Japan); Hayashi, Kouichi [Faculty of Engineering, Nagoya Institute of technology, Gokiso-cho, Showa-ku, Nagoya, Aichi 466-8555 (Japan)

    2017-06-15

    X-ray Fluorescence Holography (XFH) study of Cu(In,Ga)Se{sub 2} single crystals has been performed using an inverse mode. Energies of incident X-ray are from 9.2 to 13.2 keV. The Cu-Kα X-ray fluorescence hologram has been constructed, and atomic images were reconstructed using Barton's algorithm. Dependence of fluorescent X-ray, either Cu or Ga, on the reconstructed atomic images of CuIn{sub 0.2}Ga{sub 0.8}Se{sub 2} was examined. The atomic image of CuIn{sub 0.2}Ga{sub 0.8}Se{sub 2} was compared with that of CuIn{sub 0.8}Ga{sub 0.2}Se{sub 2}. The reconstructed atomic images of the cation (Cu, Ga, and In) plane and that of the anion (Se) plane are discussed in terms of the alloy composition. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer.

    Science.gov (United States)

    Muhammed, M M; Roldan, M A; Yamashita, Y; Sahonta, S-L; Ajia, I A; Iizuka, K; Kuramata, A; Humphreys, C J; Roqan, I S

    2016-07-14

    We demonstrate the high structural and optical properties of InxGa1-xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 10(7) cm(-2)) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1-xN epilayers can be achieved with high optical quality of InxGa1-xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

  3. Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs

    Science.gov (United States)

    Wang, Hsiang-Chen; Chen, Meng-Chu; Lin, Yen-Sheng; Lu, Ming-Yen; Lin, Kuang-I.; Cheng, Yung-Chen

    2017-11-01

    The features of eight-period In0.2Ga0.8N/GaN quantum wells (QWs) with silicon (Si) doping in the first two to five quantum barriers (QBs) in the growth sequence of blue light-emitting diodes (LEDs) are explored. Epilayers of QWs' structures are grown on 20 pairs of In0.02Ga0.98N/GaN superlattice acting as strain relief layers (SRLs) on patterned sapphire substrates (PSSs) by a low-pressure metal-organic chemical vapor deposition (LP-MOCVD) system. Temperature-dependent photoluminescence (PL) spectra, current versus voltage ( I- V) curves, light output power versus injection current ( L- I) curves, and images of high-resolution transmission electron microscopy (HRTEM) of epilayers are measured. The consequences show that QWs with four Si-doped QBs have larger carrier localization energy (41 meV), lower turn-on (3.27 V) and breakdown (- 6.77 V) voltages, and higher output power of light of blue LEDs at higher injection current than other samples. Low barrier height of QBs in a four-Si-doped QB sample results in soft confinement potential of QWs and lower turn-on and breakdown voltages of the diode. HRTEM images give the evidence that this sample has relatively diffusive interfaces of QWs. Uniform spread of carriers among eight QWs and superior localization of carriers in each well are responsible for the enhancement of light output power, in particular, for high injection current in the four-Si-doped QB sample. The results demonstrate that four QBs of eight In0.2Ga0.8N/GaN QWs with Si doping not only reduce the quantum-confined Stark effect (QCSE) but also improve the distribution and localization of carriers in QWs for better optical performance of blue LEDs.

  4. The weighted 2-server problem

    Czech Academy of Sciences Publication Activity Database

    Chrobak, M.; Sgall, Jiří

    2004-01-01

    Roč. 324, 2-3 (2004), s. 289-319 ISSN 0304-3975 R&D Projects: GA MŠk ME 103; GA MŠk ME 476; GA ČR GA201/01/1195; GA MŠk LN00A056; GA AV ČR IAA1019901; GA AV ČR IAA1019401 Institutional research plan: CEZ:AV0Z1019905 Keywords : online algorithms * k- server problem Subject RIV: BA - General Mathematics Impact factor: 0.676, year: 2004

  5. Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes

    International Nuclear Information System (INIS)

    Wang, C.-L.; Tsai, M.-C.; Gong, J.-R.; Liao, W.-T.; Lin, P.-Y.; Yen, K.-Y.; Chang, C.-C.; Lin, H.-Y.; Hwang, S.-K.

    2007-01-01

    Investigations were conducted to explore the effect of Al 0.3 Ga 0.7 N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In 0.2 Ga 0.8 N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al 0.3 Ga 0.7 N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In 0.2 Ga 0.8 N/GaN MQW LED structures enables the improved LED performance

  6. Hydrothermal synthesis and photoluminescent properties of hierarchical GdPO4·H2O:Ln3+ (Ln3+ = Eu3+, Ce3+, Tb3+) flower-like clusters

    Science.gov (United States)

    Amurisana, Bao.; Zhiqiang, Song.; Haschaolu, O.; Yi, Chen; Tegus, O.

    2018-02-01

    3D hierarchical GdPO4·H2O:Ln3+ (Ln3+ = Eu3+, Ce3+, Tb3+) flower clusters were successfully prepared on glass slide substrate by a simple, economical hydrothermal process with the assistance of disodium ethylenediaminetetraacetic acid (Na2H2L, where L4- = (CH2COO)2N(CH2)2N(CH2COO)24-). In this process, Na2H2L was used as both a chelating agent and a structure-director. The hierarchical flower clusters have an average diameter of 7-12 μm and are composed of well-aligned microrods. The influence of the molar ratio of Na2H2L/Gd3+ and reaction time on the morphology was systematically studied. A possible crystal growth and formation mechanism of hierarchical flower clusters is proposed based on the evolution of morphology as a function of reaction time. The self-assembled GdPO4·H2O:Ln3+ superstructures exhibit strong orange-red (Eu3+, 5D0 → 7F1), green (Tb3+, 5D4 → 7F5) and near ultraviolet emissions (Ce3+, 5d → 7F5/2) under ultraviolet excitation, respectively. This study may provide a new channel for building hierarchically superstructued oxide micro/nanomaterials with optical and new properties.

  7. Size-controlled InGaN/GaN nanorod LEDs with an ITO/graphene transparent layer

    Science.gov (United States)

    Shim, Jae-Phil; Seong, Won-Seok; Min, Jung-Hong; Kong, Duk-Jo; Seo, Dong-Ju; Kim, Hyung-jun; Lee, Dong-Seon

    2016-11-01

    We introduce ITO on graphene as a current-spreading layer for separated InGaN/GaN nanorod LEDs for the purpose of passivation-free and high light-extraction efficiency. Transferred graphene on InGaN/GaN nanorods effectively blocks the diffusion of ITO atoms to nanorods, facilitating the production of transparent ITO/graphene contact on parallel-nanorod LEDs, without filling the air gaps, like a bridge structure. The ITO/graphene layer sufficiently spreads current in a lateral direction, resulting in uniform and reliable light emission observed from the whole area of the top surface. Using KOH treatment, we reduce series resistance and reverse leakage current in nanorod LEDs by recovering the plasma-damaged region. We also control the size of the nanorods by varying the KOH treatment time and observe strain relaxation via blueshift in electroluminescence. As a result, bridge-structured LEDs with 8 min of KOH treatment show 15 times higher light-emitting efficiency than with 2 min of KOH treatment.

  8. Rethinking Sensitized Luminescence in Lanthanide Coordination Polymers and MOFs: Band Sensitization and Water Enhanced Eu Luminescence in [Ln(C15H9O5)3(H2O)3]n (Ln = Eu, Tb).

    Science.gov (United States)

    Einkauf, Jeffrey D; Kelley, Tanya T; Chan, Benny C; de Lill, Daniel T

    2016-08-15

    A coordination polymer [Ln(C15H9O9)3(H2O)3]n (1-Ln = Eu(III), Tb(III)) assembled from benzophenonedicarboxylate was synthesized and characterized. The organic component is shown to sensitize lanthanide-based emission in both compounds, with quantum yields of 36% (Eu) and 6% (Tb). Luminescence of lanthanide coordination polymers is currently described from a molecular approach. This methodology fails to explain the luminescence of this system. It was found that the band structure of the organic component rather than the molecular triplet state was able to explain the observed luminescence. Deuterated (Ln(C15H9O9)3(D2O)3) and dehydrated (Ln(C15H9O9)3) analogues were also studied. When bound H2O was replaced by D2O, lifetime and emission increased as expected. Upon dehydration, lifetimes increased again, but emission of 1-Eu unexpectedly decreased. This reduction is reasoned through an unprecedented enhancement effect of the compound's luminescence by the OH/OD oscillators in the organic-to-Eu(III) energy transfer process.

  9. Li{sub 35}Ln{sub 9}Si{sub 30}N{sub 59}O{sub 2}F with Ln = Ce, Pr - highly condensed nitridosilicates

    Energy Technology Data Exchange (ETDEWEB)

    Lupart, Saskia; Durach, Dajana; Schnick, Wolfgang [Department Chemie, Lehrstuhl fuer Anorganische Festkoerperchemie, Ludwig-Maximilians-Universitaet Muenchen (Germany)

    2011-10-15

    The isotypic nitridosilicates Li{sub 35}Ln{sub 9}Si{sub 30}N{sub 59}O{sub 2}F (Ln = Ce, Pr) were synthesized by reaction of LnF{sub 3} and LiN{sub 3} with Si(NH){sub 2} in liquid lithium flux in weld shut tantalum ampoules. The crystal structures of the isotypic compounds were solved and refined on the basis of single-crystal X-ray diffraction (P anti 3c1 (no. 165), Z = 2; Li{sub 35}Ce{sub 9}Si{sub 30}N{sub 59}O{sub 2}F:, a = 1479.9(2), c = 1538.3(3) pm, R{sub 1} = 0.0526, 1671 data, 175 parameters; Li{sub 35}Pr{sub 9}Si{sub 30}N{sub 59}O{sub 2}F: a = 1477.3(2), c = 1533.9(3) pm, R{sub 1} = 0.0441, 1331 data, 175 parameters). The silicate substructure represents a 3D network of all side corner sharing SiN{sub 4} tetrahedra. At one discrete and not condensed mixed anion position an atomic ratio O:F = 2:1 is assumed in order to achieve charge neutrality. With an atomic ratio Si:N = 30:59, the degree of condensation of the silicate substructure is slightly above κ = 1/2. Accordingly, there are triply crosslinking N{sup [3]} atoms in the silicate substructure. The obtained structures prove that by employing the lithium flux technique not only nitridosilicates with a low degree of condensation can be obtained by using rather mild reaction conditions at low temperatures. Lattice energy calculations (MAPLE) and EDX measurements confirmed the electrostatic bonding interactions and the chemical composition. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Study of GaN nanorods converted from β-Ga2O3

    Science.gov (United States)

    Li, Yuewen; Xiong, Zening; Zhang, Dongdong; Xiu, Xiangqian; Liu, Duo; Wang, Shuang; Hua, Xuemei; Xie, Zili; Tao, Tao; Liu, Bin; Chen, Peng; Zhang, Rong; Zheng, Youdou

    2018-05-01

    We report here high-quality β-Ga2O3 nanorods (NRs) grown on sapphire substrates by hydrothermal method. Ammoniating the β-Ga2O3 NRs results in strain-free wurtzite gallium nitride (GaN) NRs. It was shown by XRD and Raman spectroscopy that β-Ga2O3 was partially converted to GaN/β-Ga2O3 at 1000 °C and then completely converted to GaN NRs at 1050 °C, as confirmed by high-resolution transmission electron microscopy (HRTEM). There is no band-edge emission of β-Ga2O3 in the cathodoluminescence spectrum, and only a deep-level broad emission observed at 3.68-3.73 eV. The band edge emission (3.39 eV) of GaN NRs converted from β-Ga2O3 can also be observed.

  11. Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs

    Science.gov (United States)

    Ahmed, Nadim; Dutta, Aloke K.

    2017-06-01

    In this paper, we present a completely analytical model for the 2DEG concentration in AlGaN/GaN HEMTs as a function of gate bias, considering the donor-like trap states present at the metal/AlGaN interface to be the primary source of 2DEG carriers. To the best of our knowledge, this is a completely new contribution of this work. The electric field in the AlGaN layer is calculated using this model, which is further used to model the gate leakage current under reverse bias. We have modified the existing TTT (Thermionic Trap-Assisted Tunneling) current model, taking into account the effect of both metal/AlGaN interface traps as well as AlGaN bulk traps. The gate current under forward bias is also modeled using the existing thermionic emission model, approximating it by its Taylor series expansion. To take into account the effect of non-zero drain-source bias (VDS), an empirical fitting parameter is introduced in order to model the channel voltage in terms of VDS. The results of our models have been compared with the experimental data reported in the literature for three different devices, and the match is found to be excellent for both forward and reverse bias as well as for zero and non-zero VDS.

  12. The single crystal structure determination of Ln{sub 6}MnSb{sub 15} (Ln=La, Ce), Ln{sub 6}Mn{sub 1-x}Zn{sub x}Sb{sub 15} (x∝0.5), and Ln{sub 6}ZnSb{sub 15} (Ln=La-Pr)

    Energy Technology Data Exchange (ETDEWEB)

    Benavides, Katherine A.; McCandless, Gregory T.; Chan, Julia Y. [Texas Univ., Dallas, Richardson, TX (United States). Dept. of Chemistry and Biochemistry

    2017-09-01

    Single crystals of Ln{sub 6}MnSb{sub 15} (Ln=La, Ce), Ln{sub 6}Mn{sub 1-x}Zn{sub x}Sb{sub 15} (x∝0.5), and Ln{sub 6}ZnSb{sub 15} (Ln=La-Pr) have been successfully grown and the compounds adopt the orthorhombic Ln{sub 6}MnSb{sub 15} structure type (space group Immm), with a∝4.3 Aa, b∝15 Aa, and c∝19 Aa. This structure is comprised of antimony nets and antimony ribbons which exhibit positional disorder at connecting points between antimony substructures, in addition to two partially occupied transition metal sites. The unit cell volumes of the La analogs displayed a systematic decrease upon Zn substitution. However, for the Ce{sub 6}Mn{sub 1-x}Zn{sub x}Sb{sub 15} and Pr{sub 6}Mn{sub 1-x}Zn{sub x}Sb{sub 15} (x∝0.5), the volumes deviate from linearity as observed in the parent compounds.

  13. Host-sensitized luminescence properties in CaNb2O6:Ln(3+) (Ln(3+) = Eu(3+)/Tb(3+)/Dy(3+)/Sm(3+)) phosphors with abundant colors.

    Science.gov (United States)

    Li, Kai; Liu, Xiaoming; Zhang, Yang; Li, Xuejiao; Lian, Hongzhou; Lin, Jun

    2015-01-05

    A series of Ln(3+) (Ln(3+) = Eu(3+)/Tb(3+)/Dy(3+)/Sm(3+)) ion doped CaNb2O6 (CNO) phosphors have been prepared via the conventional high-temperature solid-state reaction route. The X-ray diffraction (XRD) and structure refinement, diffuse reflection, photoluminescence (PL), and fluorescent decay curves were used to characterize the as-prepared samples. Under UV radiation, the CNO host present a broad emission band from about 355 to 605 nm centered around 460 nm originating from the NbO6 octahedral groups, which has spectral overlaps with the excitation of f-f transitions of Eu(3+)/Tb(3+)/Dy(3+)/Sm(3+) in CNO:Eu(3+)/Tb(3+)/Dy(3+)/Sm(3+) samples. They show both host emission and respective emission lines derived from the characteristic f-f transitions of activators, which present different emission colors owing to the energy transfer from the NbO6 group in the host to Eu(3+)/Tb(3+)/Dy(3+)/Sm(3+) with increasing activator concentrations. The decreases of decay lifetimes of host emissions in CNO:Eu(3+)/Tb(3+)/Dy(3+)/Sm(3+) demonstrate the energy transfer from the hosts to Eu(3+)/Tb(3+)/Dy(3+)/Sm(3+). The energy transfer mechanisms in CNO:Eu(3+)/Tb(3+)/Dy(3+) phosphors have been determined to be a resonant type via dipole-dipole mechanisms. For CNO:Sm(3+), the metal-metal charge transfer transition (MMCT) might contribute to the different variations of decay lifetimes and emission intensity from CNO:Eu(3+)/Tb(3+)/Dy(3+) samples. The best quantum efficiency is 71.2% for CNO:0.01/0.02Dy(3+). The PL properties of as-prepared materials indicate the promising application in UV-pumped white-emitting lighting diodes field.

  14. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

    KAUST Repository

    Mumthaz Muhammed, Mufasila

    2016-07-14

    We demonstrate the high structural and optical properties of InxGa1−xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm−2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1−xN epilayers can be achieved with high optical quality of InxGa1−xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

  15. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

    KAUST Repository

    Mumthaz Muhammed, Mufasila; Roldan, M. A.; Yamashita, Y.; Sahonta, S.-L.; Ajia, Idris A.; Iizuka, K.; Kuramata, A.; Humphreys, C. J.; Roqan, Iman S.

    2016-01-01

    We demonstrate the high structural and optical properties of InxGa1−xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm−2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1−xN epilayers can be achieved with high optical quality of InxGa1−xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

  16. Phase relationships in the BaO-Ga2O3-Ta2O5 system and the structure of Ba6Ga21TaO40.

    Science.gov (United States)

    Cao, Jiang; Yu, Xiaodi; Kuang, Xiaojun; Su, Qiang

    2012-07-16

    Phase relationships in the BaO-Ga(2)O(3)-Ta(2)O(5) ternary system at 1200 °C were determined. The A(6)B(10)O(30) tetragonal tungsten bronze (TTB) related solution in the BaO-Ta(2)O(5) subsystem dissolved up to ~11 mol % Ga(2)O(3), forming a ternary trapezoid-shaped TTB-related solid solution region defined by the BaTa(2)O(6), Ba(1.1)Ta(5)O(13.6), Ba(1.58)Ga(0.92)Ta(4.08)O(13.16), and Ba(6)GaTa(9)O(30) compositions in the BaO-Ga(2)O(3)-Ta(2)O(5) system. Two ternary phases Ba(6)Ga(21)TaO(40) and eight-layer twinned hexagonal perovskite solid solution Ba(8)Ga(4-x)Ta(4+0.6x)O(24) were confirmed in the BaO-Ga(2)O(3)-Ta(2)O(5) system. Ba(6)Ga(21)TaO(40) crystallized in a monoclinic cell of a = 15.9130(2) Å, b = 11.7309(1) Å, c = 5.13593(6) Å, β = 107.7893(9)°, and Z = 1 in space group C2/m. The structure of Ba(6)Ga(21)TaO(40) was solved by the charge flipping method, and it represents a three-dimensional (3D) mixed GaO(4) tetrahedral and GaO(6)/TaO(6) octahedral framework, forming mixed 1D 5/6-fold tunnels that accommodate the Ba cations along the c axis. The electrical property of Ba(6)Ga(21)TaO(40) was characterized by using ac impedance spectroscopy.

  17. Host composition dependent tunable multicolor emission in the single-phase Ba2(Ln(1-z)Tb(z))(BO3)2Cl:Eu phosphors.

    Science.gov (United States)

    Xia, Zhiguo; Zhuang, Jiaqing; Meijerink, Andries; Jing, Xiping

    2013-05-14

    A new strategy based on the host composition design has been adopted to obtain efficient color-tunable emission from Ba2Ln(0.97-z)Tb(z)(BO3)2Cl:0.03Eu (Ln = Y, Gd and Lu, z = 0-0.97) phosphors. This study reveals that the single-phase Ba2Ln(1-z)Tb(z)(BO3)2Cl compounds can be applied to use allowed Eu(2+) absorption transitions to sensitize Eu(3+) emission via the energy transfer Eu(2+) → (Tb(3+))n → Eu(3+). The powder X-ray diffraction (XRD) and Rietveld refinement analysis shows single-phase Ba2Ln(1-z)Tb(z)(BO3)2Cl. As-prepared Ba2Ln(0.97-z)Tb(z)(BO3)2Cl:0.03Eu phosphors show intense green, yellow, orange and red emission under 377 nm near ultraviolet (n-UV) excitation due to a variation in the relative intensities of the Eu(2+), Tb(3+) and Eu(3+) emission depending on the Tb content (z) in the host composition, allowing color tuning. The variation in emission color is explained by energy transfer and has been investigated by photoluminescence and lifetime measurements and is further characterized by the Commission Internationale de l'éclairage (CIE) chromaticity indexes. The quantum efficiencies of the phosphors are high, up to 74%, and show good thermal stabilities up to 150 °C. This investigation demonstrates the possibility to sensitize Eu(3+) line emission by Eu(2+)via energy migration over Tb(3+) resulting in efficient color tunable phosphors which are promising for use in solid-state white light-emitting diodes (w-LEDs).

  18. Determination of the constants of the solubility product of Ln(OH){sub 3} and the effect of the chloride ions on the lanthanum hydrolysis, praseodymium and lutetium in aqueous solutions of ion force 2 Molar; Determinacion de las constantes del producto de solubilidad de Ln(OH){sub 3} y el efecto de los iones cloruro sobre la hidrolisis de lantano, praseodimio y lutecio en soluciones acuosas de fuerza ionica 2 Molar

    Energy Technology Data Exchange (ETDEWEB)

    Lopez G, H.D

    2005-07-01

    The behavior of lanthanum (III), praseodymium (III), and lutetium (III) was studied in 2 M NaClO{sub 4} (aq) and 2 M NaCl (aq) at 303 K and free -CO{sub 2} conditions. Solubility diagrams (p Ln(aq)-pC{sub H}) were obtained by means of a radiochemical method. The pC{sub H} borderlines of saturation and unsaturation zones of the solutions and solubility product constants for Ln(OH){sub 3} were determined from these diagrams. The fitting of the solubility equation to the experimental values of p Ln(aq)-pC{sub H} diagrams allowed the calculation of the first hydrolysis and solubility product constants. Independently, the stability constants for the first species of hydrolysis were determined by means of pH titrations, the data were treated with the program SUPERQUAD and fitted to the mean ligand number equation. The stability constants for the species LnCl{sup 2+} were as well calculated in 2M ionic strength and 303 K from the hydrolysis constant values obtained in both perchlorate and chloride media. The values obtained for La, Pr and Lu were: logK{sub ps}: 21.11 {+-} 0.09, 19.81 {+-} 0.11 and 18.10 {+-} 0.13 in 2M NaClO{sub 4}; logK{sub ps}: 22.22 {+-} 0.09, 21.45 {+-} 0.14 and 18.52 {+-} 0.29 in 2M NaCl; log {beta}{sub 1}: - 8.64 {+-} 0.02, - 8.37 {+-} 0.01 and - 7.95 {+-} 0.11 in 2M NaClO{sub 4}; log {beta}{sub 1}{sup /} : - 9.02 {+-} 0.11, - 8.75 {+-} 0.01 and - 8.12 {+-} 0.03 in 2M NaCl and the values for log {beta}{sub 1,Cl} were - 0.0255, - 0.155 and - 0.758, respectively. (Author)

  19. High-pressure synthesis and crystal structures of the strontium oxogallates Sr2Ga2O5 and Sr5Ga6O14

    International Nuclear Information System (INIS)

    Kahlenberg, Volker; Goettgens, Valerie; Mair, Philipp; Schmidmair, Daniela

    2015-01-01

    High-pressure synthesis experiments in a piston–cylinder apparatus at 1.5 GPa/3.0 GPa and 1000 °C resulted in the formation of single-crystals of Sr 2 Ga 2 O 5 and Sr 5 Ga 6 O 14 , respectively. The structures of both compounds have been solved from single-crystal diffraction data sets using direct methods. The first compound is orthorhombic with space group type Pbca (a=10.0021(4) Å, b=9.601(4) Å, c=10.6700(4) Å, V=1024.6(4) Å 3 , M r =394.68 u, Z=8, D x =5.12 g/cm 3 ) and belongs to the group of single layer gallates. Individual sheets are parallel to (0 0 1) and can be built from the condensation of unbranched vierer single chains running along [0 1 0]. The layers are characterized by the presence of four- and strongly elliptical eight-membered rings of corner connected tetrahedra in UUDD and UUUUDDDD conformation. Strontium atoms are sandwiched between the tetrahedral layers for charge compensation and are coordinated by six and seven oxygen ligands, respectively. Sr 2 Ga 2 O 5 is isotypic with several other double sulfides and selenides. To the best of our knowledge, it is the first example of an oxide with this structure type. From a structural point of view, Sr 5 Ga 6 O 14 is a phyllogallate as well. The crystal structure adopts the monoclinic space group P2 1 /c (a=8.1426(3) Å, b=8.1803(3) Å, c=10.8755(4) Å, β=91.970(4)° V=723.98(5) Å 3 , M r =1080.42 u, Z=2, D x =4.96 g/cm 3 ). Individual sheets extend along (0 0 1). Basic building units are unbranched dreier single chains parallel to [1 0 0]. The layers contain tertiary (Q 3 ) und quaternary (Q 4 ) connected [GaO 4 ]-tetrahedra in the ratio 2:1 resulting in a Ga:O ratio of 3:7 and the formation of exclusively five-membered rings. Linkage between adjacent tetrahedral sheets is provided by three symmetrically independent strontium ions which are surrounded by six to eight oxygen atoms. The layers in Sr 5 Ga 6 O 14 are similar to those observed in the melilite structure-type. Crystallochemical

  20. Synthesis and thermoelectric properties of rare earth Yb-doped Ba8−xYbxSi30Ga16 clathrates

    International Nuclear Information System (INIS)

    Liu, Lihua; Li, Feng; Wei, Yuping; Chen, Ning; Bi, Shanli; Qiu, Hongmei; Cao, Guohui; Li, Yang

    2014-01-01

    Highlights: • Samples with the chemical formula Ba8− x Yb x Si 30 Ga 16 (x = 0, 0.5, 0.7, 1 and 1.5) were prepared. • Some Yb atoms enter the clathrate lattice to replace Ba, while other Yb atoms are oxidized as Yb 2 O 3 . • The thermal conductivity decreases with Yb-doping. • Thermoelectric figure of merit ZT significantly increased. -- Abstract: The potential thermoelectric and magnetic application of clathrate materials with rare-earth doping is the focus of much of the recent research activity in the synthetic material physics and chemistry. A series of clathrate samples with the chemical formula Ba 8−x Yb x Si 30 Ga 16 (x = 0, 0.5, 0.7, 1 and 1.5) were prepared by combining arc melting, ball milling and spark plasma sintering (SPS) techniques. X-ray diffraction and scanning electronic microscopy combined with energy-dispersive X-ray spectroscopy (EDS) analysis showed the dominant phase to be the type-I clathrate. Whereas, X-ray structural refinement and EDS analysis indicated that some Yb atoms enter the clathrate lattice to replace Ba at 2a sites, while other Yb atoms are oxidized as Yb 2 O 3 precipitated around grain boundaries. The solid solubility of Yb into clathrate lattice yielded x ∼ 0.3. Comparative analysis between Yb-doped and Yb-free clathrates showed that the thermal conductivity decreases with Yb-doping. Consequently, thermoelectric figure of merit ZT significantly increased

  1. Hydrothermal synthesis, structure, and optical properties of two nanosized Ln{sub 26} rate at CO{sub 3} (Ln=Dy and Tb) cluster-based lanthanide-transition-metal-organic frameworks (Ln MOFs)

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yu; Huang, Lian; Miao, Hao; Wan, Hong Xiang; Mei, Hua; Liu, Ying [State Key Laboratory of Materials-Oriented Chemical Engineering, Nanjing Tech University (China); Xu, Yan [State Key Laboratory of Materials-Oriented Chemical Engineering, Nanjing Tech University (China); State Key Laboratory of Coordination Chemistry, Nanjing Tech University (China)

    2015-02-16

    Two Ln{sub 26} rate at CO{sub 3} (Ln=Dy and Tb) cluster-based lanthanide-transition-metal-organic frameworks (Ln MOFs) formulated as [Dy{sub 26}Cu{sub 3}(Nic){sub 24}(CH{sub 3}COO){sub 8}(CO{sub 3}){sub 11}(OH){sub 26}(H{sub 2}O){sub 14}]Cl . 3 H{sub 2}O (1; HNic=nicotinic acid) and [Tb{sub 26}NaAg{sub 3}(Nic){sub 27}(CH{sub 3}COO){sub 6}(CO{sub 3}){sub 11}(OH){sub 26}Cl(H{sub 2}O){sub 15}] . 7.5 H{sub 2}O (2) have been successfully synthesized by hydrothermal methods and characterized by IR, thermogravimetric analysis (TGA), elemental analysis, and single X-ray diffraction. Compound 1 crystallizes in the monoclinic space group Cc with a=35.775(12) Aa, b=33.346(11) Aa, c=24.424(8) Aa, β=93.993(5) , V=29065(16) Aa{sup 3}, whereas 2 crystallizes in the triclinic space group P anti 1 with a=20.4929(19) Aa, b=24.671(2) Aa, c=29.727(3) Aa, α=81.9990(10) , β=88.0830(10) , γ=89.9940(10) , V=14875(2) Aa{sup 3}. Structural analysis indicates the framework of 1 is a 3D perovskite-like structure constructed out of CO{sub 3} rate at Dy{sub 26} building units and Cu{sup +} centers by means of nicotinic acid ligand bridging. In 2, however, nanosized CO{sub 3} rate at Tb{sub 26} units and [Ag{sub 3}Cl]{sup 2+} centers are connected by Nic{sup -} bridges to give rise to a 2D structure. It is worth mentioning that this kind of 4d-4f cluster-based MOF is quite rare as most of the reported analogous compounds are 3d-4f ones. Additionally, the solid-state emission spectra of pure compound 2 at room temperature suggest an efficient energy transfer from the ligand Nic{sup -} to Tb{sup 3+} ions, which we called the ''antenna effect''. Compound 2 shows a good two-photon absorption (TPA) with a TPA coefficient of 0.06947 cm GM{sup -1} (1 GM = 10{sup -50} cm{sup 4} s photon{sup -1}), which indicates that compound 2 might be a good choice for third-order nonlinear optical materials. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Modeling and optimization of a double-well double-barrier GaN/AlGaN/GaN/AlGaN resonant tunneling diode

    Science.gov (United States)

    Liu, Yang; Gao, Bo; Gong, Min; Shi, Ruiying

    2017-06-01

    The influence of a GaN layer as a sub-quantum well for an AlGaN/GaN/AlGaN double barrier resonant tunneling diode (RTD) on device performance has been investigated by means of numerical simulation. The introduction of the GaN layer as the sub-quantum well turns the dominant transport mechanism of RTD from the 3D-2D model to the 2D-2D model and increases the energy difference between tunneling energy levels. It can also lower the effective height of the emitter barrier. Consequently, the peak current and peak-to-valley current difference of RTD have been increased. The optimal GaN sub-quantum well parameters are found through analyzing the electrical performance, energy band, and transmission coefficient of RTD with different widths and depths of the GaN sub-quantum well. The most pronounced electrical parameters, a peak current density of 5800 KA/cm2, a peak-to-valley current difference of 1.466 A, and a peak-to-valley current ratio of 6.35, could be achieved by designing RTD with the active region structure of GaN/Al0.2Ga0.8 N/GaN/Al0.2Ga0.8 N (3 nm/1.5 nm/1.5 nm/1.5 nm).

  3. Syntheses, structures, and magnetic properties of a family of heterometallic heptanuclear [Cu5Ln2] (Ln = Y(III), Lu(III), Dy(III), Ho(III), Er(III), and Yb(III)) complexes: observation of SMM behavior for the Dy(III) and Ho(III) analogues.

    Science.gov (United States)

    Chandrasekhar, Vadapalli; Dey, Atanu; Das, Sourav; Rouzières, Mathieu; Clérac, Rodolphe

    2013-03-04

    Sequential reaction of the multisite coordination ligand (LH3) with Cu(OAc)2·H2O, followed by the addition of a rare-earth(III) nitrate salt in the presence of triethylamine, afforded a series of heterometallic heptanuclear complexes containing a [Cu5Ln2] core {Ln = Y(1), Lu(2), Dy(3), Ho(4), Er(5), and Yb(6)}. Single-crystal X-ray crystallography reveals that all the complexes are dicationic species that crystallize with two nitrate anions to compensate the charge. The heptanuclear aggregates in 1-6 are centrosymmetrical complexes, with a hexagonal-like arrangement of six peripheral metal ions (two rare-earth and four copper) around a central Cu(II) situated on a crystallographic inversion center. An all-oxygen environment is found to be present around the rare-earth metal ions, which adopt a distorted square-antiprismatic geometry. Three different Cu(II) sites are present in the heptanuclear complexes: two possess a distorted octahedral coordination sphere while the remaining one displays a distorted square-pyramidal geometry. Detailed static and dynamic magnetic properties of all the complexes have been studied and revealed the single-molecule magnet behavior of the Dy(III) and Ho(III) derivatives.

  4. Bifunctional Zn(II)Ln(III) dinuclear complexes combining field induced SMM behavior and luminescence: enhanced NIR lanthanide emission by 9-anthracene carboxylate bridging ligands.

    Science.gov (United States)

    Palacios, María A; Titos-Padilla, Silvia; Ruiz, José; Herrera, Juan Manuel; Pope, Simon J A; Brechin, Euan K; Colacio, Enrique

    2014-02-03

    There were new dinuclear Zn(II)-Ln(III) complexes of general formulas [Zn(μ-L)(μ-OAc)Ln(NO3)2] (Ln(III) = Tb (1), Dy (2), Er (3), and Yb (4)), [Zn(μ-L)(μ-NO3)Er(NO3)2] (5), [Zn(H2O)(μ-L)Nd(NO3)3]·2CH3OH (6), [Zn(μ-L)(μ-9-An)Ln(NO3)22CH3CN (Ln(III) = Tb (7), Dy (8), Er (9), Yb(10)), [Zn(μ-L)(μ-9-An)Yb(9-An)(NO3)3]·3CH3CN (11), [Zn(μ-L)(μ-9-An)Nd(9-An)(NO3)3]·2CH3CN·3H2O (12), and [Zn(μ-L)(μ-9-An)Nd(CH3OH)2(NO3)]ClO4·2CH3OH (13) prepared from the reaction of the compartmental ligand N,N',N″-trimethyl-N,N″-bis(2-hydroxy-3-methoxy-5-methylbenzyl)diethylenetriamine (H2L), with ZnX2·nH2O (X = NO3(-) or OAc(-)) salts, Ln(NO3)3·nH2O, and, in some instances, 9-anthracenecarboxylate anion (9-An). In all these complexes, the Zn(II) ions invariably occupy the internal N3O2 site whereas the Ln(III) ions show preference for the O4 external site, giving rise to a Zn(μ-diphenoxo)Ln bridging fragment. Depending on the Zn(II) salt and solvent used in the reaction, a third bridge can connect the Zn(II) and Ln(III) metal ions, giving rise to triple-bridged diphenoxoacetate in complexes 1-4, diphenoxonitrate in complex 5, and diphenoxo(9-anthracenecarboxylate) in complexes 8-13. Dy(III) and Er(III) complexes 2, 8 and 3, 5, respectively, exhibit field induced single molecule magnet (SMM) behavior, with Ueff values ranging from 11.7 (3) to 41(2) K. Additionally, the solid-state photophysical properties of these complexes are presented showing that ligand L(2-) is able to sensitize Tb(III)- and Dy(III)-based luminescence in the visible region through an energy transfer process (antenna effect). The efficiency of this process is much lower when NIR emitters such as Er(III), Nd(III), and Yb(III) are considered. When the luminophore 9-anthracene carboxylate is incorporated into these complexes, the NIR luminescence is enhanced which proves the efficiency of this bridging ligand to act as antenna group. Complexes 2, 3, 5, and 8 can be considered as dual materials

  5. Semiconducting La2AuP3, the metallic conductor Ce2AuP3, and other rare-earth gold phosphides Ln2AuP3 with two closely related crystal structures

    International Nuclear Information System (INIS)

    Eschen, M.; Kotzyba, G.; Kuennen, B.; Jeitschko, W.

    2001-01-01

    The compounds Ln 2 AuP 3 were synthesized by reaction of the elemental components in evacuated silica tubes. Their crystal structures were determined from single-crystal diffractometer data. The compounds with Ln = La, Ce, and Pr crystallize with an orthorhombic U 2 NiC 3 type structure (Pnma, Z = 4). The structure refinement for Ce 2 AuP 3 resulted in a = 774.14(6) pm, b = 421.11(4) pm, c = 1612.3(1) pm, R = 0.019 for 1410 structure factors and 38 variable parameters. For Pr 2 AuP 3 a residual of R = 0.024 was obtained. Nd 2 AuP 3 crystallizes with a monoclinic distortion of this structure: P2 1 /c, Z = 4, a = 416.14(4) pm, b = 768.87(6) pm, c = 1647.1(2) pm, β = 104.06(1) , R = 0.022 for 1361 F values and 56 variables. The near-neighbor coordinations of the two structures are nearly the same. In both structures the gold and phosphorus atoms form two-dimensionally infinite nets, where the gold atoms are tetrahedrally coordinated by phosphorus atoms with Au-P distances varying between 245.8 and 284.2 pm. Two thirds of the phosphorus atoms form pairs with single-bond distances varying between 217.7 and 218.9 pm. Thus, using oxidation numbers the structures can be rationalized with the formulas (Ln +3 ) 2 [AuP 3 ] -6 and (Ln +3 ) 2 Au +1 (P 2 ) -4 P -3 . Accordingly, La 2 AuP 3 is a diamagnetic semiconductor. Pr 2 AuP 3 is semi-conducting with an antiferromagnetic ground state, showing metamagnetism with a critical field of B c = 0.5(±0.1) T. In contrast, the cerium compound is a metallic conductor, even though its cell volume indicates that the cerium atoms are essentially trivalent, as is also suggested by the ferro- or ferrimagnetic behavior of the compound. (orig.)

  6. Influence of lead oxide addition on LnTiTaO 6 (Ln = Ce, Pr and Nd)

    Indian Academy of Sciences (India)

    The effect of PbO addition on the structural, processing and microwave dielectric properties of LnTiTaO6 (Ln = Ce, Pr and Nd) ceramics are reported. Conventional solid state ceramic route was used for the preparation of samples. Phase pure LnTiTaO6 (Ln = Ce, Pr and Nd) ceramics are prepared at a calcination ...

  7. Magnetic properties and crystal field effects in TlLnX2 compounds (X=S, Se, Te)

    International Nuclear Information System (INIS)

    Duczmal, M.; Pawlak, L.

    1997-01-01

    Ternary thallium lanthanide chalcogenides TlLnX 2 (X=S, Se or Te) crystallize in the α-NaFeO 2 type of structure (R anti 3m). Each kind of the metal ions, surrounded by the distorted chalcogenide octahedra, forms separate layers. The TlX 6 octahedra are strongly elongated and the LnX 6 octahedra slightly shrunk along the threefold axis. The deformations of the coordination polyhedra and the cell volumes change regularly with the lanthanide ionic radii. The difference between the experimental and the calculated M-X distances increases on going from sulphides to tellurides, as a result of the growing covalent character of the bonds. The crystal field parameters were estimated from the high field magnetization (0-14 T) assuming trigonal distortion of the octahedral symmetry of LnX 6 polyhedra. The second-order crystal field parameters were found to correlate with the deformation of the lanthanide ions' environments. No magnetic transition was observed down to 4.2 K. (orig.)

  8. Role of the dimensionality of the [GaX]2 network in the Zintl phases EuGa2X2

    KAUST Repository

    Singh, Nirpendra

    2012-11-28

    The structural, electronic, magnetic, optical, and thermoelectric properties of EuGa2X2 (X = P, As, and Sb) are investigated using first principles calculations (taking into account the onsite Coulomb interaction) and the semi-classical Boltzmanntheory. The divalent nature of Eu fulfils the Zintl principle as is confirmed by the calculated total magnetic moments of ∼7 μB. A metallic behavior is obtained for all compounds. The optical spectra originate mainly from the transitions between occupied Eu 4f states and unoccupied Eu 5d states. It is demonstrated that the two-dimensional [Ga(P/As)]2 network in EuGa2P2 and EuGa2As2 is favorable for thermoelectric applications as compared to the three-dimensional [GaSb]2 network in EuGa2Sb2.

  9. Insertion of water into rare earth oxocuprates (Ln)Ba 2Cu 3O 7-δ

    Science.gov (United States)

    Günther, Wulf; Schöllhorn, Robert

    1996-02-01

    The solid state reaction of LnBa 2Cu 3O 7-δ bulk material with water vapour corresponds to a quantitative topotactic reaction of the solid with H 2O to a maximum stoichiometry of LnBa 2Cu 3O 7-δ(H 2O) 1. The reaction proceeds in a temperature window which depends upon the oxygen content (δ) of the starting phase and is correlated with a structural transition via intermediate states. Although the integral copper oxidation state is not affected by the water intercalation, electronic and transport properties are strongly influenced. The insertion of water into these defect perovskites has to be described as a topotactic acid/base process.

  10. A novel mutation in SURF1 causes skipping of exon 8 in a patient with cytochrome c oxidase-deficient leigh syndrome and hypertrichosis

    Czech Academy of Sciences Publication Activity Database

    Williams, S. L.; Taanman, J. W.; Hansíková, H.; Houšťková, H.; Chowdhury, Subir; Zeman, J.; Houštěk, Josef

    2001-01-01

    Roč. 73, č. 4 (2001), s. 340-343 ISSN 1096-7192 R&D Projects: GA MŠk LN00A079; GA ČR GA302/99/0648; GA MZd NE6533 Grant - others:The Wellcome Trust(XX) 048410 Institutional research plan: CEZ:AV0Z5011922 Keywords : SURF1 * exon skipping * mitochondrial disorder Subject RIV: EB - Genetics ; Molecular Biology Impact factor: 2.345, year: 2001

  11. Remote refilling of LN2 cryostats for high sensitivity astronomical applications

    Science.gov (United States)

    l'Allemand, J. L. Lizon a.

    2017-12-01

    The most sensitive observation mode of the ESO VLT (European Southern Observatory Very Large Telescope) is the interferometric mode, where the 4 Units Telescopes are directed to the same stellar object in order to operate as a gigantic interferometer. The beam is then re-combined in the main interferometry laboratory and fed into the analyzing instruments. In order not to disturb the performance of the Interferometer, this room is considered as a sanctuary where one enters only in case of extreme need. A simple opening of the door would create air turbulences affecting the stability for hours. Any cold spot in the room could also cause convection which might change the optical path by fraction of a micron. Most of the instruments are operating at cryogenic temperatures using passive cooling based on LN2 bath cryostat. For this reason, dedicated strategy has been developed for the transfer of LN2 to the various instruments. The present document describes the various aspects and care taken in order to guarantee the very high thermal and mechanical environmental stability.

  12. Ultrafast atomic layer-by-layer oxygen vacancy-exchange diffusion in double-perovskite LnBaCo2O5.5+δ thin films.

    Science.gov (United States)

    Bao, Shanyong; Ma, Chunrui; Chen, Garry; Xu, Xing; Enriquez, Erik; Chen, Chonglin; Zhang, Yamei; Bettis, Jerry L; Whangbo, Myung-Hwan; Dong, Chuang; Zhang, Qingyu

    2014-04-22

    Surface exchange and oxygen vacancy diffusion dynamics were studied in double-perovskites LnBaCo2O5.5+δ (LnBCO) single-crystalline thin films (Ln = Er, Pr; -0.5 atoms in the LnBCO thin films is taking the layer by layer oxygen-vacancy-exchange mechanism. The first principles density functional theory calculations indicate that hydrogen atoms are present in LnBCO as bound to oxygen forming O-H bonds. This unprecedented oscillation phenomenon provides the first direct experimental evidence of the layer by layer oxygen vacancy exchange diffusion mechanism.

  13. Dlouhodobá úspěšnost tahuprosté vaginální pásky při léčbě stresové inkontinence moči

    Czech Academy of Sciences Publication Activity Database

    Mašata, J.; Martan, A.; Švabík, K.; Pavlíková, Markéta; Drahorádová, P.

    2009-01-01

    Roč. 74, č. 2 (2009), s. 118-123 ISSN 1210-7832 Grant - others:GA MZd(CZ) NR8815 Institutional research plan: CEZ:AV0Z10300504 Keywords : stresová inkontinence moči * komplikace * TVT * transperineální ultrazvuk Subject RIV: BB - Applied Statistics, Operational Research

  14. Synthetic routes to a nanoscale inorganic cluster [Ga13(μ3-OH)6(μ2-OH)18(H2O)](NO3)15 evaluated by solid-state 71Ga NMR

    International Nuclear Information System (INIS)

    Hammann, Blake A.; Marsh, David A.; Ma, Zayd L.; Wood, Suzannah R.; Eric West, Michael; Johnson, Darren W.; Hayes, Sophia E.

    2016-01-01

    Solid-state 71 Ga NMR was used to characterize a series of [Ga 13 (μ 3 -OH) 6 (μ 2 -OH) 18 (H 2 O)](NO 3 ) 15 “Ga 13 ” molecular clusters synthesized by multiple methods. These molecular clusters are precursors to thin film electronics and may be employed in energy applications. The synthetic routes provide varying levels of impurities in the solid phase, and these impurities often elude traditional characterization techniques such as powder X-ray diffraction and Raman spectroscopy. Solid-state NMR can provide a window into the gallium species even in amorphous phases. This information is vital in order to prevent the impurities from causing defect sites in the corresponding thin films upon gelation and condensation (polymerization) of the Ga 13 clusters. This work demonstrates the resolving power of solid-state NMR to evaluate structure and synthetic quality in the solid state, and the application of high-field NMR to study quadrupolar species, such as 71 Ga. - Graphical abstract: The various synthetic routes and 71 Ga solid-state NMR spectra of the nanoscale inorganic cluster [Ga 13 (μ 3 -OH) 6 (μ 2 -OH) 18 (H 2 O)](NO 3 ) 15 . - Highlights: • Solid-state 71 Ga NMR of hydroxo-aquo metal clusters and the impurities present. • High-field NMR capability allows for quadrupolar species, such as 71 Ga, to be routinely studied. • Efficient and environmentally friendly synthetic routes have been developed to prepare hydroxo-aquo metal clusters.

  15. Crystallochemical features of solid solutions based on Ga/sub 2/3/Cr/sub 2/S/sub 4/

    Energy Technology Data Exchange (ETDEWEB)

    Titov, V.V.; Kesler, Ya.A.; Gordeev, I.V.; Stupnikov, V.A.

    1988-04-01

    Ga/sub 2/3/Cr/sub 2/S/sub 4/ shows a rare type of phase transition where increases in temperature and pressure produce the disordered modification. A source of disordering can be isomorphous substitution in the tetrahedral sublattice. The authors therefore made and examined solid solutions of Ga/sub (2/3-2x/3)/M/sub x/(Cr/sub 2/)S/sub 4/ type, where M = Fe, Co, Ni, Cu. Specimens containing Fe and show a quasi-continuous solid-solution series, where the Fe system obeys Vegard's rule. Specimens containing nickel show a narrow ordering range. The most interesting results have been obtained for specimens containing copper. Cu/sub x/Ga/sub 2/3(1-x)/Cr/sub 2/S/sub 4/ specimens show a transition from a structure ordered on the tetrahedral positions, symmetry F/anti/43m, to the normal-spinel structure, Fd3m.

  16. High-pressure synthesis and crystal structures of the strontium oxogallates Sr2Ga2O5 and Sr5Ga6O14

    Science.gov (United States)

    Kahlenberg, Volker; Goettgens, Valerie; Mair, Philipp; Schmidmair, Daniela

    2015-08-01

    High-pressure synthesis experiments in a piston-cylinder apparatus at 1.5 GPa/3.0 GPa and 1000 °C resulted in the formation of single-crystals of Sr2Ga2O5 and Sr5Ga6O14, respectively. The structures of both compounds have been solved from single-crystal diffraction data sets using direct methods. The first compound is orthorhombic with space group type Pbca (a=10.0021(4) Å, b=9.601(4) Å, c=10.6700(4) Å, V=1024.6(4) Å3, Mr=394.68 u, Z=8, Dx=5.12 g/cm3) and belongs to the group of single layer gallates. Individual sheets are parallel to (0 0 1) and can be built from the condensation of unbranched vierer single chains running along [0 1 0]. The layers are characterized by the presence of four- and strongly elliptical eight-membered rings of corner connected tetrahedra in UUDD and UUUUDDDD conformation. Strontium atoms are sandwiched between the tetrahedral layers for charge compensation and are coordinated by six and seven oxygen ligands, respectively. Sr2Ga2O5 is isotypic with several other double sulfides and selenides. To the best of our knowledge, it is the first example of an oxide with this structure type. From a structural point of view, Sr5Ga6O14 is a phyllogallate as well. The crystal structure adopts the monoclinic space group P21/c (a=8.1426(3) Å, b=8.1803(3) Å, c=10.8755(4) Å, β=91.970(4)° V=723.98(5) Å3, Mr=1080.42 u, Z=2, Dx=4.96 g/cm3). Individual sheets extend along (0 0 1). Basic building units are unbranched dreier single chains parallel to [1 0 0]. The layers contain tertiary (Q3) und quaternary (Q4) connected [GaO4]-tetrahedra in the ratio 2:1 resulting in a Ga:O ratio of 3:7 and the formation of exclusively five-membered rings. Linkage between adjacent tetrahedral sheets is provided by three symmetrically independent strontium ions which are surrounded by six to eight oxygen atoms. The layers in Sr5Ga6O14 are similar to those observed in the melilite structure-type. Crystallochemical relationships between the present phases and other

  17. Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier.

    Science.gov (United States)

    Zhou, Xiaorun; Lu, Taiping; Zhu, Yadan; Zhao, Guangzhou; Dong, Hailiang; Jia, Zhigang; Yang, Yongzhen; Chen, Yongkang; Xu, Bingshe

    2017-12-01

    Surface morphology evolution mechanisms of InGaN/GaN multiple quantum wells (MQWs) during GaN barrier growth with different hydrogen (H 2 ) percentages have been systematically studied. Ga surface-diffusion rate, stress relaxation, and H 2 etching effect are found to be the main affecting factors of the surface evolution. As the percentage of H 2 increases from 0 to 6.25%, Ga surface-diffusion rate and the etch effect are gradually enhanced, which is beneficial to obtaining a smooth surface with low pits density. As the H 2 proportion further increases, stress relaxation and H 2 over- etching effect begin to be the dominant factors, which degrade surface quality. Furthermore, the effects of surface evolution on the interface and optical properties of InGaN/GaN MQWs are also profoundly discussed. The comprehensive study on the surface evolution mechanisms herein provides both technical and theoretical support for the fabrication of high-quality InGaN/GaN heterostructures.

  18. Activation barriers for series of exothermic homologous reactions. VI. Reactions of lanthanide and transition metal atoms.

    Science.gov (United States)

    Blue, Alan S.; Fontijn, Arthur

    2001-09-01

    Semiempirical configuration interaction (SECI) theory to predict activation barriers, E, as given by k(T)=ATn exp(-E(RT), has been applied to homologous series of lanthanide (LN) and transition metal (TM) atom oxidation reactions. This was achieved by considering as homologous series reactions of elements differing only by the number of electrons in one subshell. Comparison between SECI and experimental results leads to an average deviation for the LN+N2O reactions of 0.66 kJ mol-1, and up to 5.5 kJ mol-1 for other series. Thirty-one activation barriers are reported.

  19. Detailed Visualization of Phase Evolution during Rapid Formation of Cu(InGa)Se2 Photovoltaic Absorber from Mo/CuGa/In/Se Precursors.

    Science.gov (United States)

    Koo, Jaseok; Kim, Sammi; Cheon, Taehoon; Kim, Soo-Hyun; Kim, Woo Kyoung

    2018-03-02

    Amongst several processes which have been developed for the production of reliable chalcopyrite Cu(InGa)Se 2 photovoltaic absorbers, the 2-step metallization-selenization process is widely accepted as being suitable for industrial-scale application. Here we visualize the detailed thermal behavior and reaction pathways of constituent elements during commercially attractive rapid thermal processing of glass/Mo/CuGa/In/Se precursors on the basis of the results of systematic characterization of samples obtained from a series of quenching experiments with set-temperatures between 25 and 550 °C. It was confirmed that the Se layer crystallized and then melted between 250 and 350 °C, completely disappearing at 500 °C. The formation of CuInSe 2 and Cu(InGa)Se 2 was initiated at around 450 °C and 550 °C, respectively. It is suggested that pre-heat treatment to control crystallization of Se layer should be designed at 250-350 °C and Cu(InGa)Se 2 formation from CuGa/In/Se precursors can be completed within a timeframe of 6 min.

  20. Crystal structure of the compounds R8Ga3Co (R=Ce, Pr, Nd, Sm, Tb, Dy, Ho, Er, Tm)

    International Nuclear Information System (INIS)

    Grin', Yu.N.; Sichevich, O.M.; Gladyshevskij, R.E.; Yarmolyuk, Ya.P.

    1984-01-01

    The crystal structure of Pr 8 Ga 3 Co compounds is studied by the method of monocrystal (autodiffractometer, MoKsub(α)): space group P6 3 mc, a=10.489, c=6.910 A, Z=2. Coordination numbers of atoms are 11-14 for Pr, 11 for Ga, 7 for Co. The shortest interatomic distances are 3.365 for Pr-Pr, 3.047 for Pr-Ga, 2.75 A for Pr-Co. Pr 3 Ga 3 Co structure is akin to structures of R 2 In compounds (Ni 2 In type) and R 2 Ga (Cl 2 Pb type). Isostructural compounds form in systems of other rare earth metals with gallium and cobalt

  1. Patterns of failure after radical prostatectomy in prostate cancer - implications for radiation therapy planning after {sup 68}Ga-PSMA-PET imaging

    Energy Technology Data Exchange (ETDEWEB)

    Schiller, Kilian; Sauter, K.; Dewes, S. [Technical University of Munich (TUM), Department of Radiation Oncology, Munich (Germany); Eiber, M. [Technical University Munich (TUM), Department of Nuclear Medicine, Munich (Germany); David Geffen School of Medicine at UCLA, Department of Molecular and Medical Pharmacology, Los Angeles, CA (United States); Maurer, T.; Gschwend, J. [Technical University Munich (TUM), Department of Urology, Munich (Germany); Combs, S.E.; Habl, G. [Technical University of Munich (TUM), Department of Radiation Oncology, Munich (Germany); Institute of Innovative Radiotherapy (iRT), Helmholtz Zentrum Muenchen, Department of Radiation Sciences (DRS), Munich (Germany)

    2017-09-15

    Salvage radiotherapy (SRT) after radical prostatectomy (RPE) and lymphadenectomy (LAE) is the appropriate radiotherapy option for patients with persistent/ recurrent prostate cancer (PC). {sup 68}Ga-PSMA-PET imaging has been shown to accurately detect PC lesions in a primary setting as well as for local recurrence or for lymph node (LN) metastases. In this study we evaluated the patterns of recurrence after RPE in patients with PC, putting a highlight on the differentiation between sites that would have been covered by a standard radiation therapy (RT) field in consensus after the RTOG consensus and others that would have not. Thirty-one out of 83 patients (37%) with high-risk PC were the subject of our study. Information from {sup 68}Ga-PSMA-PET imaging was used to individualize treatment plans to include suspicious lesions as well as possibly boost sites with tracer uptake in LN or the prostate bed. For evaluation, {sup 68}Ga-PSMA-PET-positive LN were contoured in a patient dataset with a standard lymph drainage (RTOG consensus on CTV definition of pelvic lymph nodes) radiation field depicting color-coded nodes that would have been infield or outfield of that standard lymph drainage field and thereby visualizing typical patterns of failure of a ''blind'' radiation therapy after RPE and LAE. Compared to negative conventional imaging (CT/MRI), lesions suspicious for PC were detected in 27/31 cases (87.1%) by {sup 68}Ga-PSMA-PET imaging, which resulted in changes to the radiation concept. There were 16/31 patients (51.6%) that received a simultaneous integrated boost (SIB) to a subarea of the prostate bed (in only three cases this dose escalation would have been planned without the additional knowledge of {sup 68}Ga-PSMA-PET imaging) and 18/31 (58.1%) to uncommon (namely presacral, paravesical, pararectal, preacetabular and obturatoric) LN sites. Furthermore, 14 patients (45.2%) had a changed TNM staging result by means of {sup 68}Ga

  2. 8-band and 14-band kp modeling of electronic band structure and material gain in Ga(In)AsBi quantum wells grown on GaAs and InP substrates

    Energy Technology Data Exchange (ETDEWEB)

    Gladysiewicz, M.; Wartak, M. S. [Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)

    2015-08-07

    The electronic band structure and material gain have been calculated for GaAsBi/GaAs quantum wells (QWs) with various bismuth concentrations (Bi ≤ 15%) within the 8-band and 14-band kp models. The 14-band kp model was obtained by extending the standard 8-band kp Hamiltonian by the valence band anticrossing (VBAC) Hamiltonian, which is widely used to describe Bi-related changes in the electronic band structure of dilute bismides. It has been shown that in the range of low carrier concentrations n < 5 × 10{sup 18 }cm{sup −3}, material gain spectra calculated within 8- and 14-band kp Hamiltonians are similar. It means that the 8-band kp model can be used to calculate material gain in dilute bismides QWs. Therefore, it can be applied to analyze QWs containing new dilute bismides for which the VBAC parameters are unknown. Thus, the energy gap and electron effective mass for Bi-containing materials are used instead of VBAC parameters. The electronic band structure and material gain have been calculated for 8 nm wide GaInAsBi QWs on GaAs and InP substrates with various compositions. In these QWs, Bi concentration was varied from 0% to 5% and indium concentration was tuned in order to keep the same compressive strain (ε = 2%) in QW region. For GaInAsBi/GaAs QW with 5% Bi, gain peak was determined to be at about 1.5 μm. It means that it can be possible to achieve emission at telecommunication windows (i.e., 1.3 μm and 1.55 μm) for GaAs-based lasers containing GaInAsBi/GaAs QWs. For GaInAsBi/Ga{sub 0.47}In{sub 0.53}As/InP QWs with 5% Bi, gain peak is predicted to be at about 4.0 μm, i.e., at the wavelengths that are not available in current InP-based lasers.

  3. Degradation of 2DEG transport properties in GaN-capped AlGaN/GaN heterostructures at 600 °C in oxidizing and inert environments

    Science.gov (United States)

    Hou, Minmin; Jain, Sambhav R.; So, Hongyun; Heuser, Thomas A.; Xu, Xiaoqing; Suria, Ateeq J.; Senesky, Debbie G.

    2017-11-01

    In this paper, the electron mobility and sheet density of the two-dimensional electron gas (2DEG) in both air and argon environments at 600 °C were measured intermittently over a 5 h duration using unpassivated and Al2O3-passivated AlGaN/GaN (with 3 nm GaN cap) van der Pauw test structures. The unpassivated AlGaN/GaN heterostructures annealed in air showed the smallest decrease (˜8%) in 2DEG electron mobility while Al2O3-passivated samples annealed in argon displayed the largest drop (˜70%) based on the Hall measurements. Photoluminescence and atomic force microscopy showed that minimal strain relaxation and surface roughness changes have occurred in the unpassivated samples annealed in air, while those with Al2O3 passivation annealed in argon showed significant microstructural degradations. This suggests that cracks developed in the samples annealed in air were healed by oxidation reactions. To further confirm this, Auger electron spectroscopy was conducted on the unpassivated samples after the anneal in air and results showed that extra surface oxides have been generated, which could act as a dislocation pinning layer to suppress the strain relaxation in AlGaN. On the other hand, similar 2DEG sheet densities were observed in passivated and unpassivated AlGaN/GaN samples at the end of the 5-h anneal in air or argon due to the combined impact of strain relaxation and changes in the ionized electronic states. The results support the use of unpassivated GaN-capped AlGaN/GaN heterostructures as the material platform for high-temperature electronics and sensors used in oxidizing environmental conditions.

  4. Vliv léčby kyselinou acetylosalycilovou na makrovaskulární reaktivitu u diabetiků 2.typu

    Czech Academy of Sciences Publication Activity Database

    Prázdný, M.; Hrach, Karel; Kasalová, Z.; Škrha, J.; Zvárová, Jana

    2005-01-01

    Roč. 8, 1 Suppl. (2005), s. 41 ISSN 1211-9326. [Diabetologické dny. 21.04.2005-23.04.2005, Luhačovice] R&D Projects: GA MŠk LN00B107 Institutional research plan: CEZ:AV0Z10300504 Keywords : diabetes mellitus 2. typu * mikrovaskulární reaktivita Subject RIV: BB - Applied Statistics, Operational Research

  5. Optical properties of transparent Li2O-Ga2O3-SiO2 glass-ceramics embedding Ni-doped nanocrystals

    International Nuclear Information System (INIS)

    Suzuki, Takenobu; Murugan, Ganapathy Senthil; Ohishi, Yasutake

    2005-01-01

    Transparent Li 2 O-Ga 2 O 3 -SiO 2 (LGS) glass-ceramics embedding Ni:LiGa 5 O 8 nanocrystals were fabricated. An intense emission centered around 1300 nm with the width of more than 300 nm was observed by 976 nm photoexcitation of the glass-ceramics. The lifetime was more than 900 μs at 5 K and 500 μs at 300 K. The emission could be attributed to the 3 T 2g ( 3 F)→ 3 A 2g ( 3 F) transition of Ni 2+ in distorted octahedral sites in LiGa 5 O 8 . The product of stimulated emission cross section and lifetime for the emission was about 3.7x10 -24 cm 2 s and was a sufficiently practical value

  6. Isolating GaSb Membranes Grown Metamorphically on GaAs Substrates Using Highly Selective Substrate Removal Etch Processes

    Science.gov (United States)

    Renteria, E. J.; Muniz, A. J.; Addamane, S. J.; Shima, D. M.; Hains, C. P.; Balakrishnan, G.

    2015-05-01

    The etch rates of NH4OH:H2O2 and C6H8O7:H2O2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH4OH:H2O2 solution has a greater etch rate differential for the GaSb/GaAs material system than C6H8O7:H2O2 solution. The selectivity of NH4OH:H2O2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11,000 ± 2000, whereas that of C6H8O7:H2O2 has been measured up to 143 ± 2. The etch contrast has been verified by isolating 2- μm-thick GaSb epilayers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high- resolution x-ray diffraction and atomic force microscopy.

  7. Equivalence of chemical and external pressures in RCoLnO

    Energy Technology Data Exchange (ETDEWEB)

    Prando, Giacomo; Ortix, Carmine; Kataev, Vladislav [Leibniz-Institut fuer Festkoerper- und Werkstoffforschung (IFW), Dresden (Germany); Profeta, Gianni [SPIN-CNR e Dipartimento di Fisica, Universita dell' Aquila (Italy); Sanna, Samuele [Dipartimento di Fisica, Universita di Pavia (Italy); Khasanov, Rustem [Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institut, Villigen (Switzerland); Pal, Anand; Awana, Veer [National Physical Laboratory (CSIR), New Delhi (India); Buechner, Bernd [Leibniz-Institut fuer Festkoerper- und Werkstoffforschung (IFW), Dresden (Germany); Institut fuer Festkoerperphysik, Technische Universitaet Dresden (Germany); De Renzi, Roberto [Dipartimento di Fisica, Universita di Parma e CNISM (Italy)

    2015-07-01

    We report on the local magnetic properties of the series of ferromagnetic (FM) materials RCoLnO (R = La, Pr, Nd, Sm; Ln = As, P) as investigated by means of muon spin spectroscopy under pressure P and electron spin resonance (ESR). The effect of P is shown to be quantitatively equivalent to the chemical lattice shrinkage triggered by the different ionic radii of R ions. This is verified for both experimental-dependent quantities (i.e., magnetic field at the muon site) and for intrinsically material-dependent properties (i.e., FM critical temperature T{sub C}). Results of ESR in a wide range of temperature and magnetic field clearly display that magnetism is of localized nature, despite the overall metallic behaviour of these materials.

  8. Assessment of Ga2O3 technology

    Science.gov (United States)

    2016-09-15

    this article has given the emerging technology of GaN a valuable push in term of encouragement to stay with it while the painful technology development...Ga2O3 α-Ga2O3 β-Ga2O3 β-Ga2O3 β-Ga2O3 poly - Ga2O3 β-Ga2O3 Epi-layer Growth Method MBE (ozone) MBE (ozone) MBE (ozone) Mist-CVD MBE (ozone... pains to treat the wafer surface with BCl3 RIE to create charges at the interface. The gate contact was also barely a Schottky contact evidenced by

  9. 6‐GHz‐to‐18‐GHz AlGaN/GaN Cascaded Nonuniform Distributed Power Amplifier MMIC Using Load Modulation of Increased Series Gate Capacitance

    Directory of Open Access Journals (Sweden)

    Dong‐Hwan Shin

    2017-10-01

    Full Text Available A 6‐GHz‐to‐18‐GHz monolithic nonuniform distributed power amplifier has been designed using the load modulation of increased series gate capacitance. This amplifier was implemented using a 0.25‐μm AlGaN/GaN HEMT process on a SiC substrate. With the proposed load modulation, we enhanced the amplifier's simulated performance by 4.8 dB in output power, and by 13.1% in power‐added efficiency (PAE at the upper limit of the bandwidth, compared with an amplifier with uniform gate coupling capacitors. Under the pulse‐mode condition of a 100‐μs pulse period and a 10% duty cycle, the fabricated power amplifier showed a saturated output power of 39.5 dBm (9 W to 40.4 dBm (11 W with an associated PAE of 17% to 22%, and input/output return losses of more than 10 dB within 6 GHz to 18 GHz.

  10. Luminescent properties of complexly substituted oxides Ме2Ln8 (XO46O2 (Me=Sr, Ca; Ln=La, Gd, Eu; X= Si, P

    Directory of Open Access Journals (Sweden)

    A. A. Vasin

    2014-11-01

    Full Text Available In the current work it is established that the maximum intensity of a luminescence of crystalline phosphors with structure silicate-apatite of general formulae: Ca2Eu8Si6(1-xP6xO26, Sr2Gd7.2Eu0.8Si6(1-xP6xO26 and Ca2La8(1-xEu8xSi6O26 is reached at concentration of europium equal 0,15. The maximum intensity of a luminescence of these substances, at replacement in an anion sublattice of tetrahedrons [SiO4]4- on tetrahedrons [PO4]3- takes place at concentration of phosphorus 0,05.

  11. Determination of the constants of the solubility product of Ln(OH)3 and the effect of the chloride ions on the lanthanum hydrolysis, praseodymium and lutetium in aqueous solutions of ion force 2 Molar

    International Nuclear Information System (INIS)

    Lopez G, H.D.

    2005-01-01

    The behavior of lanthanum (III), praseodymium (III), and lutetium (III) was studied in 2 M NaClO 4 (aq) and 2 M NaCl (aq) at 303 K and free -CO 2 conditions. Solubility diagrams (p Ln(aq)-pC H ) were obtained by means of a radiochemical method. The pC H borderlines of saturation and unsaturation zones of the solutions and solubility product constants for Ln(OH) 3 were determined from these diagrams. The fitting of the solubility equation to the experimental values of p Ln(aq)-pC H diagrams allowed the calculation of the first hydrolysis and solubility product constants. Independently, the stability constants for the first species of hydrolysis were determined by means of pH titrations, the data were treated with the program SUPERQUAD and fitted to the mean ligand number equation. The stability constants for the species LnCl 2+ were as well calculated in 2M ionic strength and 303 K from the hydrolysis constant values obtained in both perchlorate and chloride media. The values obtained for La, Pr and Lu were: logK ps : 21.11 ± 0.09, 19.81 ± 0.11 and 18.10 ± 0.13 in 2M NaClO 4 ; logK ps : 22.22 ± 0.09, 21.45 ± 0.14 and 18.52 ± 0.29 in 2M NaCl; log β 1 : - 8.64 ± 0.02, - 8.37 ± 0.01 and - 7.95 ± 0.11 in 2M NaClO 4 ; log β 1 / : - 9.02 ± 0.11, - 8.75 ± 0.01 and - 8.12 ± 0.03 in 2M NaCl and the values for log β 1,Cl were - 0.0255, - 0.155 and - 0.758, respectively. (Author)

  12. Fundamental absorption edge in CuIn5Se8 and CuGa3Se5 single crystals

    International Nuclear Information System (INIS)

    Leon, M.; Merino, J.M.; Levcenko, S.; Nateprov, A.; Tezlevan, V.; Arushanov, E.; Syrbu, N.N.

    2006-01-01

    Optical absorption spectra of CuIn 5 Se 8 and CuGa 3 Se 5 single crystals have been investigated. The energy gap E g for CuIn 5 Se 8 (CuGa 3 Se 5 ) was found to be varied from 1.27(1.79) to 1.21(1.71) eV in the temperature range between 10 and 300 K. The temperature dependence of E g was studied by means of the Einstein model and the Paessler model. The Einstein temperature {222(267)K}, the Debye temperature {310(380)K}, a dimensionless constant related to the electron-phonon coupling {1.62(2.65)} as well as an effective energy {20 (24) meV} and a cut-off phonon energy {35(39) meV} have been estimated for CuIn 5 Se 8 (CuGa 3 Se 5 ). It was also found that the major contribution of phonons to the shift of E g versus temperature in CuIn 5 Se 8 (CuGa 3 Se 5 ) is mainly from optical phonons. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  13. Magnetism of cyano-bridged Ln3+-M3+ complexes. Part II: one-dimensional complexes (Ln3+ = Eu, Tb, Dy, Ho, Er, Tm; M3+ = Fe or Co) with bpy as blocking ligand.

    Science.gov (United States)

    Figuerola, Albert; Ribas, Joan; Casanova, David; Maestro, Miguel; Alvarez, Santiago; Diaz, Carmen

    2005-10-03

    The reaction of Ln(NO3)3(aq) with K3[Fe(CN)6] or K3[Co(CN)6] and 2,2'-bipyridine in water/ethanol led to 13 one-dimensional complexes: trans-[M(CN)4(mu-CN)2Ln(H2O)4(bpy)]n.4nH2O.1.5nbpy (Ln = Eu3+, Tb3+, Dy3+, Ho3+, Er3+, Tm3+, Lu3+; M = Fe3+, Co3+). The structures for [EuFe]n (1), [TbFe]n (2), [DyFe]n (3), [HoFe]n (4), [ErFe]n (5), [TmFe]n (6), [LuFe]n (7), [EuCo]n (8), [TbCo]n (9), [DyCo]n (10), [HoCo]n (11), [ErCo]n (12), and [TmCo]n (13) have been solved: they crystallize in the triclinic space group P and are isomorphous. They exhibit a supramolecular architecture created by the interplay of coordinative, hydrogen bonding, and pi-pi interactions. A stereochemical study of the eight-vertex polyhedra of the lanthanide ions, based on continuous shape measures, is presented. The Ln3+-Fe3+ interaction is antiferromagnetic in [DyFe]n and [TbFe]n. For [EuFe]n, [HoFe]n, [ErFe]n, and [TmFe]n, there is no sign of any significant interaction. The magnetic behavior of [DyFe]n suggests the onset of weak long-range ferromagnetic ordering at 2.5 K.

  14. FATIGUE PROPERTIES OF MODIFIED 316LN STAINLESS STEEL AT 4 K FOR HIGH FIELD CABLE-IN-CONDUIT APPLICATIONS

    International Nuclear Information System (INIS)

    Toplosky, V. J.; Walsh, R. P.; Han, K.

    2010-01-01

    Cable-In-Conduit-Conductor (CICC) alloys, exposed to Nb 3 Sn reaction heat-treatments, such as modified 316LN require a design specific database. A lack of fatigue life data (S-n curves) that could be applied in the design of the ITER CS and the NHMFL Series Connected Hybrid magnets is the impetus for the research presented here. The modified 316LN is distinguished by a lower carbon content and higher nitrogen content when compared to conventional 316LN. Because the interstitial alloying elements affect the mechanical properties significantly, it is necessary to characterize this alloy in a systematic way. In conjunction, to ensure magnet reliability and performance, several criteria and expectations must be met, including: high fatigue life at the operating stresses, optimal stress management at cryogenic temperatures and thin walled conduit to reduce coil mass. Tension-tension load control axial fatigue tests have good applicability to CICC solenoid magnet design, thus a series of 4 K strength versus fatigue life curves have been generated. In-situ samples of 316LN base metal, seam welded, butt welded and seam plus butt welded are removed directly from the conduit in order to address base and weld material fatigue life variability. The more than 30 fatigue tests show good grouping on the fatigue life curve and allow discretionary 4 K fatigue life predictions for conduit made with modified 316LN.

  15. Growth and characterization of β-Ga2O3 crystals

    Science.gov (United States)

    Nikolaev, V. I.; Maslov, V.; Stepanov, S. I.; Pechnikov, A. I.; Krymov, V.; Nikitina, I. P.; Guzilova, L. I.; Bougrov, V. E.; Romanov, A. E.

    2017-01-01

    Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8 mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of 46″. Young's modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained.

  16. High optical and structural quality of GaN epilayers grown on ( 2¯01) β-Ga2O3

    KAUST Repository

    Mumthaz Muhammed, Mufasila; Peres, M.; Yamashita, Y.; Morishima, Y.; Sato, S.; Franco, N.; Lorenz, K.; Kuramata, A.; Roqan, Iman S.

    2014-01-01

    Producing highly efficient GaN-based optoelectronic devices has been a challenge for a long time due to the large lattice mismatch between III-nitride materials and the most common substrates, which causes a high density of threading dislocations. Therefore, it is essential to obtain alternative substrates with small lattice mismatches, appropriate structural, thermal and electrical properties, and a competitive price. Our results show that (2̄01) oriented β-Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth. Photoluminescence spectra of thick GaN layers grown on (2̄01) oriented β-Ga 2O3 are found to be dominated by intense bandedge emission. Atomic force microscopy studies show a modest threading dislocation density of ∼108cm-2. X-ray diffraction studies show the high quality of the single-phase wurtzite GaN thin film on (2̄01) β-Ga2O3 with in-plane epitaxial orientation relationships between the β-Ga2O3 and the GaN thin film defined by (010) β-Ga2O3 || (112̄0) GaN and (2̄01) β-Ga2O3 || (0001) GaN leading to a lattice mismatch of ∼4.7%. Complementary Raman spectroscopy indicates that the quality of the GaN epilayer is high. © 2014 AIP Publishing LLC.

  17. High optical and structural quality of GaN epilayers grown on ( 2¯01) β-Ga2O3

    KAUST Repository

    Mumthaz Muhammed, Mufasila

    2014-07-28

    Producing highly efficient GaN-based optoelectronic devices has been a challenge for a long time due to the large lattice mismatch between III-nitride materials and the most common substrates, which causes a high density of threading dislocations. Therefore, it is essential to obtain alternative substrates with small lattice mismatches, appropriate structural, thermal and electrical properties, and a competitive price. Our results show that (2̄01) oriented β-Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth. Photoluminescence spectra of thick GaN layers grown on (2̄01) oriented β-Ga 2O3 are found to be dominated by intense bandedge emission. Atomic force microscopy studies show a modest threading dislocation density of ∼108cm-2. X-ray diffraction studies show the high quality of the single-phase wurtzite GaN thin film on (2̄01) β-Ga2O3 with in-plane epitaxial orientation relationships between the β-Ga2O3 and the GaN thin film defined by (010) β-Ga2O3 || (112̄0) GaN and (2̄01) β-Ga2O3 || (0001) GaN leading to a lattice mismatch of ∼4.7%. Complementary Raman spectroscopy indicates that the quality of the GaN epilayer is high. © 2014 AIP Publishing LLC.

  18. The pressure of hot QCD up to $g^{6}$ ln(1/g)

    CERN Document Server

    Kajantie, Keijou; Rummukainen, K; Schröder, Y

    2003-01-01

    The free energy density, or pressure, of QCD has at high temperatures an expansion in the coupling constant g, known so far up to order g^5. We compute here the last contribution which can be determined perturbatively, g^6 ln(1/g), by summing together results for the 4-loop vacuum energy densities of two different three-dimensional effective field theories. We also demonstrate that the inclusion of the new perturbative g^6 ln(1/g) terms, together with the so far unknown perturbative and non-perturbative g^6 terms, could potentially extend the applicability of the resummed coupling constant series down to surprisingly low temperatures.

  19. Ternary rhombohedral Laves phases RE_2Rh_3Ga (RE = Y, La-Nd, Sm, Gd-Er)

    International Nuclear Information System (INIS)

    Seidel, Stefan; Benndorf, Christopher; Heletta, Lukas; Poettgen, Rainer; Eckert, Hellmut; Sao Paulo Univ., Sao Carlos

    2017-01-01

    The ordered Laves phases RE_2Rh_3Ga (RE=Y, La-Nd, Sm, Gd-Er) were synthesized by arc-melting of the elements and subsequent annealing. The samples were characterized by powder X-ray diffraction (XRD). They crystallize with the rhombohedral Mg_2Ni_3Si type structure, space group R3m. Three structures were refined from single crystal X-ray diffractometer data: a=557.1(1), c=1183.1(2), wR2=0.0591, 159 F"2 values, 10 variables for Y_2Rh_3Ga, a=562.5(2), c=1194.4(2) pm, wR2=0.0519, 206 F"2 values, 11 variables for Ce_2Rh_3Ga and a=556.7(2), c=1184.1(3) pm, wR2=0.0396, 176 F"2 values, 11 variables for Tb_2Rh_3Ga. The Rh_3Ga tetrahedra are condensed via common corners and the large cavities left by the network are filled by the rare earth atoms. The RE_2Rh_3Ga Laves phases crystallize with a translationengleiche subgroup of the cubic RERh_2 Laves phases with MgCu_2 type. Magnetic susceptibility measurements reveal Pauli paramagnetism for Y_2Rh_3Ga and La_2Rh_3Ga. Ce_2Rh_3Ga shows intermediate cerium valence while all other RE_2Rh_3Ga phases are Curie-Weiss paramagnets which order magnetically at low temperatures. The "8"9Y and "7"1Ga solid state nuclear magnetic resonance (NMR) spectra of the diamagnetic representative Y_2Rh_3Ga show well-defined single resonances in agreement with an ordered bulk phase. In comparison to the binary Laves phase YRh_2 a strongly increased "8"9Y resonance frequency is observed owing to a higher s-electron spin density at the "8"9Y nuclei as proven by density of states (DOS) calculations.

  20. p-tert-Butylcalix[8]arene: an extremely versatile platform for cluster formation.

    Science.gov (United States)

    Taylor, Stephanie M; Sanz, Sergio; McIntosh, Ruaraidh D; Beavers, Christine M; Teat, Simon J; Brechin, Euan K; Dalgarno, Scott J

    2012-12-07

    p-tert-Butylcalix[4]arene is a bowl-shaped molecule capable of forming a range of polynuclear metal clusters under different experimental conditions. p-tert-Butylcalix[8]arene (TBC[8]) is a significantly more flexible analogue that has previously been shown to form mono- and binuclear lanthanide (Ln) metal complexes. The latter (cluster) motif is commonly observed and involves the calixarene adopting a near double-cone conformation, features of which suggested that it may be exploited as a type of assembly node in the formation of larger polynuclear lanthanide clusters. Variation in the experimental conditions employed for this system provides access to Ln(1), Ln(2), Ln(4), Ln(5), Ln(6), Ln(7) and Ln(8) complexes, with all polymetallic clusters containing the common binuclear lanthanide fragment. Closer inspection of the structures of the polymetallic clusters reveals that all but one (Ln(8)) are in fact based on metal octahedra or the building blocks of octahedra, with the identity and size of the final product dependent upon the basicity of the solution and the deprotonation level of the TBC[8] ligand. This demonstrates both the versatility of the ligand towards incorporation of additional metal centres, and the associated implications for tailoring the magnetic properties of the resulting assemblies in which lanthanide centres may be interchanged. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. GaAs micromachining in the 1 H2SO4:1 H2O2:8 H2O system. From anisotropy to simulation

    Science.gov (United States)

    Tellier, C. R.

    2011-02-01

    The bulk micromachining on (010), (110) and (111)A GaAs substrates in the 1 H2SO4:1 H2O2:8 H2O system is investigated. Focus is placed on anisotropy of 3D etching shapes with a special emphasis on convex and concave undercuts which are of prime importance in the wet micromachining of mechanical structures. Etched structures exhibit curved contours and more and less rounded sidewalls showing that the anisotropy is of type 2. This anisotropy can be conveniently described by a kinematic and tensorial model. Hence, a database composed of dissolution constants is further determined from experiments. A self-elaborated simulator which works with the proposed database is used to derive theoretical 3D shapes. Simulated shapes agree well with observed shapes of microstructures. The successful simulations open up two important applications for MEMS: CAD of mask patterns and meshing of simulated shapes for FEM simulation tools.

  2. Understanding the crystallization mechanism of delafossite CuGaO2 for controlled hydrothermal synthesis of nanoparticles and nanoplates.

    Science.gov (United States)

    Yu, Mingzhe; Draskovic, Thomas I; Wu, Yiying

    2014-06-02

    The delafossite CuGaO2 is an important p-type transparent conducting oxide for both fundamental science and industrial applications. An emerging application is for p-type dye-sensitized solar cells. Obtaining delafossite CuGaO2 nanoparticles is challenging but desirable for efficient dye loading. In this work, the phase formation and crystal growth mechanism of delafossite CuGaO2 under low-temperature (mechanism to explain the formation of large CuGaO2 nanoplates. Importantly, by suppressing this OA process, delafossite CuGaO2 nanoparticles that are 20 nm in size were successfully synthesized for the first time. Moreover, considering the structural and chemical similarities between the Cu-based delafossite series compounds, the understanding of the hydrothermal chemistry and crystallization mechanism of CuGaO2 should also benefit syntheses of other similar delafossites such as CuAlO2 and CuScO2.

  3. Effect of Ga2O3 addition on the properties of Y2O3-doped AlN ceramics

    Directory of Open Access Journals (Sweden)

    Shin H.

    2015-01-01

    Full Text Available Effect Ga2O3 addition on the densification and properties of Y2O3-doped AlN ceramics was investigated under the constraint of total sintering additives (Y2O3 and Ga2O3 of 4.5 wt%. Ga was detected in the AlN grain as well as the grain boundary phases. YAlO3 and Y4Al2O9 were observed as the secondary crystalline phases in all of the investigated compositions. As the substitution of Ga2O3 for Y2O3 increased, the quantity of the Y4Al2O9 phase decreased while that of YAlO3 was more or less similar. Neither additional secondary phases was identified, nor was the sinterability inhibited by the Ga2O3 addition; the linear shrinkage and apparent density were above 20 percent and 3.34-3.37 g/cm3, respectively. However, the optical reflectance and the elastic modulus generally decreased whereas the Poisson ratio increased significantly. The dielectric constant and the loss tangent of 4.0Y2O3-0.5Ga2O3-95.5Y2O3 at the resonant frequency of 8.22 GHz were 8.63 and 0.003, respectively.

  4. Mixed phosphates of the Na3PO4 - LnPO4 systems

    International Nuclear Information System (INIS)

    Slivko, T.A.; Smirnova, I.N.; Zimina, G.V.; Spiridonov, F.M.; Chudinova, N.N.

    2002-01-01

    The phase relationships in the systems Na 3 PO 4 - LnPO 4 (subsolidus 950 Deg C cross-sections), where Ln=Sm, Eu, Tb, Dy, Ho, Tm, Yb, Lu, were studied by X-ray analysis. Reactions of the components were deduced, formed phases were separated and identified. The Na 6 Ln 3 (PO 4 ) 5 (Ln=Dy, Ho, Tm), Na 3 Ln 2 (PO 4 ) 3 (Ln=Tm, Yb, Lu) compounds and phases of the unstable composition Na 6+x Ln 3-x/3 (PO 4 ) 5 (Ln=Yb, Lu, 0 ≤ x ≤ 1.5) were detected for the first time. In all systems the existence of the Na 3-x Ln x/3 PO 4 unstable composition phase on the basis of the high temperature modification of sodium phosphate (sp. gr. Fm3m) is established, suggesting that stabilization of this modification by rare earth ions is possible [ru

  5. Observation of Vacancies, Faults, and Superstructures in Ln5Mo2O12 (Ln = La, Y, and Lu) Compounds with Direct Mo-Mo Bonding.

    Science.gov (United States)

    Colabello, Diane M; Sobalvarro, Elizabeth M; Sheckelton, John P; Neuefeind, Joerg C; McQueen, Tyrel M; Khalifah, Peter G

    2017-11-06

    Among oxide compounds with direct metal-metal bonding, the Y 5 Mo 2 O 12 (A 5 B 2 O 12 ) structural family of compounds has a particularly intriguing low-dimensional structure due to the presence of bioctahedral B 2 O 10 dimers arranged in one-dimensional edge-sharing chains along the direction of the metal-metal bonds. Furthermore, these compounds can have a local magnetic moment due to the noninteger oxidation state (+4.5) of the transition metal, in contrast to the conspicuous lack of a local moment that is commonly observed when oxide compounds with direct metal-metal bonding have integer oxidation states resulting from the lifting of orbital degeneracy typically induced by the metal-metal bonding. Although a monoclinic C2/m structure has been previously proposed for Ln 5 Mo 2 O 12 (Ln = La-Lu and Y) members of this family based on prior single crystal diffraction data, it is found that this structural model misses many important structural features. On the basis of synchrotron powder diffraction data, it is shown that the C2/m monoclinic unit cell represents a superstructure relative to a previously unrecognized orthorhombic Immm subcell and that the superstructure derives from the ordering of interchangeable Mo 2 O 10 and LaO 6 building blocks. The superstructure for this reason is typically highly faulted, as evidenced by the increased breadth of superstructure diffraction peaks associated with a coherence length of 1-2 nm in the c* direction. Finally, it is shown that oxygen vacancies can occur when Ln = La, producing an oxygen deficient stoichiometry of La 5 Mo 2 O 11.55 and an approximately 10-fold reduction in the number of unpaired electrons due to the reduction of the average Mo valence from +4.5 to +4.05, a result confirmed by magnetic susceptibility measurements. This represents the first observation of oxygen vacancies in this family of compounds and provides an important means of continuously tuning the magnetic interactions within the one

  6. Conformational properties of biocompatible poly(2-ethyl-2-oxazoline)s in phosphate buffered saline

    Czech Academy of Sciences Publication Activity Database

    Gubarev, A. S.; Monnery, B. D.; Lezov, A. A.; Sedláček, Ondřej; Tsvetkov, N. V.; Hoogenboom, R.; Filippov, Sergey K.

    2018-01-01

    Roč. 9, č. 17 (2018), s. 2232-2237 ISSN 1759-9954 R&D Projects: GA ČR(CZ) GA17-00973S Grant - others:AV ČR(CZ) FWO-17-05 Program:Bilaterální spolupráce Institutional support: RVO:61389013 Keywords : equilibrium rigidity * poly(2-ethyl-2-oxazoline) * thermosensitivity Subject RIV: BO - Biophysics OBOR OECD: Biophysics Impact factor: 5.375, year: 2016

  7. New intermetallic compounds Ln(Ag, AL)4 (Ln-Y, Gd, Tb, Dy) and their structure

    International Nuclear Information System (INIS)

    Kuz'ma, Yu.B.; Stel'makhovich, B.M.

    1990-01-01

    By the methods of X-ray analysis crystal structure of compounds Ln(Ag,Al) 4 , where Ln-Y, Gd, Tb, Dy, posessing rhombic structure, is determined. The intermetallics have been prepared for the first time. Ways of atom distribution and their coordinates in DyAg 0.55 Al 3.45 structure (a=0.4296(1), b=04179(1), c=0.9995(3), R=0.093) are specified. Other compounds are formed in case of LnAgAl 3 compositions. Interatomic distances in Dy(Ag,Al) 4 structure are considered. A supposition is made on the formation in Ln-Ag-Al systems of a greater number of intermetallic compounds

  8. Design and validation of the high performance and low noise CQU-DTU-LN1 airfoils

    DEFF Research Database (Denmark)

    Cheng, Jiangtao; Zhu, Wei Jun; Fischer, Andreas

    2014-01-01

    with the blade element momentum theory, the viscous-inviscid XFOIL code and an airfoil self-noise prediction model, an optimization algorithm has been developed for designing the high performance and low noise CQU-DTU-LN1 series of airfoils with targets of maximum power coefficient and low noise emission...... emission between the CQU-DTU-LN118 airfoil and the National Advisory Committee for Aeronautics (NACA) 64618 airfoil, which is used in modern wind turbine blades, are carried out. Copyright © 2013 John Wiley & Sons, Ltd....

  9. The influence of crystal structure on ion-irradiation tolerance in the Sm{sub (x)}Yb{sub (2-x)}TiO{sub 5} series

    Energy Technology Data Exchange (ETDEWEB)

    Aughterson, R.D., E-mail: roa@ansto.gov.au [Institute of Materials Engineering, Australian Nuclear Science and Technology Organisation, PMB 1, Menai, NSW 2234 (Australia); Australian Centre for Microscopy and Microanalysis, The University of Sydney, NSW 2006 (Australia); Lumpkin, G.R.; Reyes, M. de los [Institute of Materials Engineering, Australian Nuclear Science and Technology Organisation, PMB 1, Menai, NSW 2234 (Australia); Gault, B. [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Baldo, P.; Ryan, E. [Materials Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Whittle, K.R. [Centre for Materials and Structures, School of Engineering, The University of Liverpool, Liverpool L69 3GH UK (United Kingdom); Smith, K.L. [Government International and External Relations, Australian Nuclear Science and Technology Organisation, PMB 1, Menai, NSW 2234 (Australia); Cairney, J.M. [Australian Centre for Microscopy and Microanalysis, The University of Sydney, NSW 2006 (Australia)

    2016-04-01

    This ion-irradiation study covers the four major crystal structure types in the Ln{sub 2}TiO{sub 5} series (Ln = lanthanide), namely orthorhombic Pnma, hexagonal P6{sub 3}/mmc, cubic (pyrochlore-like) Fd-3m and cubic (fluorite-like) Fm-3m. This is the first systematic examination of the complete Ln{sub 2}TiO{sub 5} crystal system and the first reported examination of the hexagonal structure. A series of samples, based on the stoichiometry Sm{sub (x)}Yb{sub (2-x)}TiO{sub 5} (where x = 2, 1.4, 1, 0.6, and 0) have been irradiated using 1 MeV Kr{sup 2+} ions and characterised in-situ using a transmission electron microscope. Two quantities are used to define ion-irradiation tolerance: critical dose of amorphisation (D{sub c}), which is the irradiating ion dose required for a crystalline to amorphous transition, and the critical temperature (T{sub c}), above which the sample cannot be rendered amorphous by ion irradiation. The structure type plus elements of bonding are correlated to ion-irradiation tolerance. The cubic phases, Yb{sub 2}TiO{sub 5} and Sm{sub 0.6}Yb{sub 1.4}TiO{sub 5}, were found to be the most radiation tolerant, with T{sub c} values of 479 and 697 K respectively. The improved radiation tolerance with a change in symmetry to cubic is consistent with previous studies of similar compounds.

  10. Prism inside. Spectroscopic and magnetic properties of the lanthanide(III) chloride oxidotungstates(VI) Ln{sub 3}Cl{sub 3}[WO{sub 6}] (Ln = La - Nd, Sm - Tb)

    Energy Technology Data Exchange (ETDEWEB)

    Dorn, Katharina V.; Blaschkowski, Bjoern; Hartenbach, Ingo [Institute for Inorganic Chemistry, University of Stuttgart (Germany); Foerg, Katharina; Netzsch, Philip; Hoeppe, Henning A. [Institute for Physics, University of Augsburg (Germany)

    2017-11-17

    The lanthanide(III) chloride oxidotungstates(VI) with the formula Ln{sub 3}Cl{sub 3}[WO{sub 6}] for Ln = La - Nd, Sm - Tb were synthesized by solid-state reactions utilizing the respective lanthanide trichloride, lanthanide sesquioxide (where available), and tungsten trioxide together with lithium chloride as flux. The title compounds crystallize hexagonally in space group P6{sub 3}/m (no. 176, a = 941-909, c = 543-525 pm, Z = 2). The structures comprise crystallographically unique Ln{sup 3+} cations surrounded by six O{sup 2-} and four Cl{sup -} anions (C.N. = 10) forming distorted tetracapped trigonal prisms as well as rather uncommon trigonal prismatic [WO{sub 6}]{sup 6-} units, whose edges are coordinated by nine Ln{sup 3+} cations. Thus, a {sup 3}{sub ∞}{([WO_6]Ln"e_9_/_3)"3"+} framework (e = edge-sharing) is created, which contains tube-shaped channels along [001] lined with chloride anions. To elucidate the spectroscopic and magnetic properties of the obtained pure phase samples, single-crystal Raman (for Ln = La - Nd, Sm-Tb), diffuse reflectance (for Ln = La, Pr, Nd, Gd), and luminescence spectroscopy (for bulk Ln{sub 3}Cl{sub 3}[WO{sub 6}] (Ln = La, Eu, Gd, Tb) and Eu{sup 3+}- or Tb{sup 3+}-doped derivatives of La{sub 3}Cl{sub 3}[WO{sub 6}] and Gd{sub 3}Cl{sub 3}[WO{sub 6}], respectively) were performed and their temperature-dependent magnetic moments (for Ln = Pr, Nd, Gd) were determined. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Magnetic susceptibility of Gd/sub 3/Ga/sub 2/

    Energy Technology Data Exchange (ETDEWEB)

    Hacker, H Jr; Gupta, R M [Duke Univ., Durham, N.C. (USA). Dept. of Electrical Engineering

    1976-03-01

    The magnetic susceptibility of the intermetallic compound Gd/sub 3/Ga/sub 2/ has been measured by the Faraday method over the range 8 - 300 K. The data indicate antiferromagnetic behavior below 53 K. Above 100 K, the mass susceptibility obeys the Curie-Weiss law, chisub(g)=4.45X10/sup -2//(T+23)emu/gOe. The corresponding effective moment is 8.51 Bohr magnetons.

  12. Automated synthesis, characterization and biological evaluation of [{sup 68}Ga]Ga-AMBA, and the synthesis and characterization of {sup nat}Ga-AMBA and [{sup 67}Ga]Ga-AMBA

    Energy Technology Data Exchange (ETDEWEB)

    Cagnolini, Aldo; Chen Jianqing; Ramos, Kimberly; Marie Skedzielewski, Tina; Lantry, Laura E.; Nunn, Adrian D.; Swenson, Rolf E. [Ernst Felder Laboratories, Bracco Research USA Inc., 305 College Road East, Princeton, NJ 08540 (United States); Linder, Karen E., E-mail: karen.e.linder@gmail.co [Ernst Felder Laboratories, Bracco Research USA Inc., 305 College Road East, Princeton, NJ 08540 (United States)

    2010-12-15

    Ga-AMBA (Ga-DO3A-CH{sub 2}CO-G-[4-aminobenzoyl]-QWAVGHLM-NH{sub 2}) is a bombesin-like agonist with high affinity for gastrin releasing peptide receptors (GRP-R). Syntheses for {sup nat}Ga-AMBA, [{sup 67}Ga]Ga-AMBA and [{sup 68}Ga]Ga-AMBA were developed. The preparation of HPLC-purified and Sep-Pak purified [{sup 68}Ga]Ga-AMBA were fully automated, using the built-in radiodetector of the Tracerlab FX F-N synthesizer to monitor fractionated {sup 68}Ge/{sup 68}Ga generator elution and purification. The total synthesis time, including the fractional elution of the generator, was 20 min for Sep-Pak purified material and 40 min for HPLC-purified [{sup 68}Ga]Ga-AMBA. Both [{sup 67}Ga]Ga-AMBA and [{sup 177}Lu]Lu-AMBA showed comparable high affinity for GRP-R in the human prostate cancer cell line PC-3 in vitro (k{sub D}=0.46{+-}0.07; 0.44{+-}0.08 nM), high internalization (78; 77%) and low efflux from cells at 2 h (2.4{+-}0.7; 2.9{+-}1.8%). Biodistribution results in PC-3 tumor-bearing male nude mice showed comparable uptake for [{sup 177}Lu]Lu-, [{sup 111}In]In-, [{sup 67}Ga]Ga- and [{sup 68}Ga]Ga-AMBA.

  13. Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation

    International Nuclear Information System (INIS)

    Hwang, Jih-Shang; Liu, Tai-Yan; Chen, Han-Wei; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong

    2013-01-01

    Enhanced photoelectrochemical (PEC) performances of Ga 2 O 3 and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga 2 O 3 and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga 2 O 3 NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga 2 O 3 . These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga 2 O 3 NWs, or by incorporation of indium to form InGaN NWs. (paper)

  14. Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation.

    Science.gov (United States)

    Hwang, Jih-Shang; Liu, Tai-Yan; Chattopadhyay, Surjit; Hsu, Geng-Ming; Basilio, Antonio M; Chen, Han-Wei; Hsu, Yu-Kuei; Tu, Wen-Hsun; Lin, Yan-Gu; Chen, Kuei-Hsien; Li, Chien-Cheng; Wang, Sheng-Bo; Chen, Hsin-Yi; Chen, Li-Chyong

    2013-02-08

    Enhanced photoelectrochemical (PEC) performances of Ga(2)O(3) and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga(2)O(3) and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga(2)O(3) NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga(2)O(3). These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga(2)O(3) NWs, or by incorporation of indium to form InGaN NWs.

  15. Enhanced visible light-responsive photocatalytic activity of LnFeO3 (Ln = La, Sm) nanoparticles by synergistic catalysis

    International Nuclear Information System (INIS)

    Li, Li; Wang, Xiong; Zhang, Yange

    2014-01-01

    Highlights: • LnFeO 3 (Ln = La, Sm) nanoparticles were prepared by a facile sol–gel method. • The samples exhibit superior visible-light-responsive photocatalytic activity. • Synergistic effect will enhance the photodegradation of RhB under visible light. - Abstract: LnFeO 3 (Ln = La, Sm) nanoparticles were prepared by a facile sol–gel method with assistance of glycol at different calcination temperatures. The as-synthesized LnFeO 3 was characterized by X-ray diffraction, transmission electron microscopy, differential scanning calorimeter and thermogravimetric analysis, and UV–vis absorption spectroscopy. The photocatalytic behaviors of LnFeO 3 nanoparticles were evaluated by photodegradation of rhodamine B under visible light irradiation. The results indicate that the visible light-responsive photocatalytic activity of LnFeO 3 nanoparticles was enhanced remarkably by the synergistic effect between the semiconductor photocatalysis and Fenton-like reaction. And a possible catalytic mechanism was also proposed based on the experimental results

  16. Electrical compensation by Ga vacancies in Ga2O3

    OpenAIRE

    Korhonen, Esa; Tuomisto, F.; Gogova, D.; Wagner, G.; Baldini, M.; Galazka, Z.; Schewski, R.; Albrecht, M.

    2015-01-01

    The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga2O3 thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga2O3 thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In2O3, where recent results show that n-type conductivity is n...

  17. Outcomes of radical nephroureterectomy: a series from the Upper Tract Urothelial Carcinoma Collaboration.

    Science.gov (United States)

    Margulis, Vitaly; Shariat, Shahrokh F; Matin, Surena F; Kamat, Ashish M; Zigeuner, Richard; Kikuchi, Eiji; Lotan, Yair; Weizer, Alon; Raman, Jay D; Wood, Christopher G

    2009-03-15

    The literature on upper tract urothelial carcinoma (UTUC) has been limited to small, single center studies. A large series of patients treated with radical nephroureterectomy for UTUC were studied, and variables associated with poor prognosis were identified. Data on 1363 patients treated with radical nephroureterectomy at 12 academic centers were collected. All pathologic slides were re-reviewed by genitourinary pathologists according to strict criteria. Pathologic review revealed renal pelvis location (64%), necrosis (21.6%), lymphovascular invasion (LVI) (24.8%), concomitant carcinoma in situ (28.7%), and high-grade disease (63.7%). A total of 590 patients (43.3%) underwent concurrent, lymphadenectomy and 135 (9.9%) were lymph node (LN) -positive. Over a mean follow-up of 51 months, 379 (28%) patients experienced disease recurrence outside of the bladder and 313 (23%) died of UTUC. The 5-year recurrence-free and cancer-specific survival probabilities (+/-SD) were 69%+/-1% and 73%+/-1%, respectively. On multivariate analysis, high tumor grade (hazards ratio [HR]: 2.0, P<.001), advancing pathologic T stage (P-for-trend<.001), LN metastases (HR: 1.8, P<.001), infiltrative growth pattern (HR: 1.5, P<.001), and LVI (HR: 1.2, P=.041) were associated with disease recurrence. Similarly, patient age (HR: 1.1, P=.001), high tumor grade (HR: 1.7, P=.001), increasing pathologic T stage (P-for-trend<.001), LN metastases (HR: 1.7, P<.001), sessile architecture (HR: 1.5, P=.002), and LVI (HR: 1.4, P=.02) were independently associated with cancer-specific survival. Radical nephroureterectomy provided durable local control and cancer-specific survival in patients with localized UTUC. Pathologic tumor grade, T stage, LN status, tumor architecture, and LVI were important prognostic variables associated with oncologic outcomes, which could potentially be used to select patients for adjuvant systemic therapy. Copyright (c) 2009 American Cancer Society.

  18. High resolution x-ray diffraction analyses of GaN/LiGaO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Matyi, R.J. [Department of Materials Science and Engineering University of Wisconsin, Madison, WI (United States); Doolittle, W.A.; Brown, A.S. [School of Electrical and Computer Engineering Georgia Institute of Technology, Atlanta, GA (United States)

    1999-05-21

    Lithium gallate (LiGaO{sub 2}) is gaining increasing attention as a potential substrate for the growth of the important semiconductor GaN. In order to better understand this material we have performed high-resolution double- and triple-axis x-ray diffraction analyses of both the starting LiGaO{sub 2} and GaN/LiGaO{sub 2} following epitaxial growth. A high-resolution triple-axis reciprocal space map of the substrate showed a sharp, well-defined crystal truncation rod and a symmetric streak of intensity perpendicular to q{sub 002}, suggesting high structural quality with mosaic spread. Triple-axis scans following GaN growth showed (1) the development of isotropic diffuse scatter around the LiGaO{sub 2} (002) reflection, (2) the presence of a semi-continuous intensity streak between the LiGaO{sub 2} (002) and GaN (0002) reflections, and (3) a compact pattern of diffuse scatter around the GaN (0002) reflection that becomes increasingly anisotropic as the growth temperature is increased. These results suggest that LiGaO{sub 2} permits the epitaxial growth of GaN with structural quality that may be superior to that observed when growth is performed on SiC or Al{sub 2}O{sub 3}. (author)

  19. Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

    International Nuclear Information System (INIS)

    Harmatha, Ladislav; Ľubica, Stuchlíková; Juraj, Racko; Juraj, Marek; Juraj, Pecháček; Peter, Benko; Michal, Nemec; Juraj, Breza

    2014-01-01

    Highlights: • Dependences of CV characteristics of the AlGaN/GaN structure on frequency and temperature variations. • Identification of electrical activity of defects by capacitance DLTS. • Simulating the properties of the GaN/Al 0.2 GaN 0.8 /GaN Schottky heterostructure. - Abstract: The paper presents the results of capacitance measurements on GaN/AlGaN/GaN Schottky heterostructures grown on an Al 2 O 3 substrate by Low-Pressure Metal–Organic Vapour-Phase Epitaxy (LP-MOVPE). Dependences of the capacitance–voltage (CV) characteristics on the frequency of the measuring signal allow analysing the properties of the 2D electron gas (2DEG) at the AlGaN/GaN heterojunction. Exact location of the hetero-interface below the surface (20 nm) was determined from the concentration profile. Temperature variations of the CV curves reveal the influence of bulk defects in GaN and of the traps at the AlGaN/GaN interface. Electrical activity of these defects was characterized by capacitance Deep Level Transient Fourier Spectroscopy (DLTFS). Experimental results of CV measurements were supported by simulating the properties of the GaN/Al 0.2 GaN 0.8 /GaN Schottky heterostructure in dependence on the influence of the concentration of donor-like traps in GaN and of the temperature upon the CV curves

  20. Continuous-wave operation of a $(20\\bar{2}\\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture

    KAUST Repository

    Megalini, Ludovico; Becerra, Daniel L.; Farrell, Robert M.; Pourhashemi, A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.; Cohen, Daniel A.

    2015-01-01

    © 2015 The Japan Society of Applied Physics. We demonstrated selective and controllable undercut etching of the InGaN/GaN multiple quantum well (MQW) active region of a (2021) laser diode (LD) structure by photoelectrochemical etching. This technique was used to fabricate current aperture edge-emitting blue laser diodes (CALDs), whose performance was compared with that of shallow-etched ridge LDs with a nominally identical epitaxial structure. The threshold current density, threshold voltage, peak output power, and series resistance for the CA-LD (shallow-etched LD) with a 2.5-μm-wide active region were 4.4 (8.1) kA/cm2, 6.1 (7.7) V, 96.5 (63.5)mW, and 4.7 (6.0)Ω under pulsed conditions and before facet coating, respectively.

  1. Continuous-wave operation of a $(20\\bar{2}\\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture

    KAUST Repository

    Megalini, Ludovico

    2015-03-06

    © 2015 The Japan Society of Applied Physics. We demonstrated selective and controllable undercut etching of the InGaN/GaN multiple quantum well (MQW) active region of a (2021) laser diode (LD) structure by photoelectrochemical etching. This technique was used to fabricate current aperture edge-emitting blue laser diodes (CALDs), whose performance was compared with that of shallow-etched ridge LDs with a nominally identical epitaxial structure. The threshold current density, threshold voltage, peak output power, and series resistance for the CA-LD (shallow-etched LD) with a 2.5-μm-wide active region were 4.4 (8.1) kA/cm2, 6.1 (7.7) V, 96.5 (63.5)mW, and 4.7 (6.0)Ω under pulsed conditions and before facet coating, respectively.

  2. Lanthanide(III) complexes with μ-SnSe{sub 4} and μ-Sn{sub 2}Se{sub 6} linkers. Solvothermal syntheses and properties of new Ln(III) selenidostannates decorated with linear polyamine

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Shuzhen; Sun, Peipei; Shen, Yali; Han, Jingyu; Sun, Hui; Jia, Dingxian [Soochow Univ., Suzhou (China). College of Chemistry, Chemical Engineering and Materials Science

    2017-06-01

    New lanthanide-selenidostannate complexes [{La(peha)(Cl)}{La(peha)(NO_3)}(μ-1κ{sup 2}:2κ{sup 2}-SnSe{sub 4})] (1), [H{sub 2}trien][{La(trien)_2}{sub 2}(μ-1-κ:2κ-Sn{sub 2}Se{sub 6})][Sn{sub 2}Se{sub 6}].H{sub 2}O (2) and [{Ln(tepa)(μ-OH)}{sub 2}(μ-1κ:2κ-Sn{sub 2}Se{sub 6})]{sub n}.nH{sub 2}O (Ln=Sm(3), Eu(4)) were prepared by solvothermal methods in pentaethylenehexamine (peha), triethylenetetramine (trien) and tetraethylenepentamine (tepa), respectively. Acting as a tetradentate chelating and bridging ligand, μ-1κ{sup 2}:2κ{sup 2}-SnSe{sub 4}, the tetrahedral SnSe{sub 4} unit joins {La(peha)(Cl)}{sup 2+} and {La(peha)(NO_3)}{sup 2+} complex fragments to generate the neutral coordination compound 1. The tetradentate μ-1κ{sup 2}:2κ{sup 2} bridge in 1 represents a new coordination mode for the SnSe{sub 4} tetrahedron. In 2, dinuclear [Sn{sub 2}Se{sub 6}]{sup 4-} anions are formed of SnSe{sub 4} tetrahedra via edge-sharing. One [Sn{sub 2}Se{sub 6}]{sup 4-} anion acts as a bidentate bridging ligand in a μ-1κ:2κ coordination mode to join two {La(trien)_2}{sup 3+} units, and the other [Sn{sub 2}Se{sub 6}]{sup 4-} anion exists as a free charge compensating ion. In 3 and 4, the [Sn{sub 2}Se{sub 6}]{sup 4-} anion connects binuclear [{Ln(tepa)(μ-OH)}{sub 2}]{sup 2+}(Ln=Sm, Eu) units with a bidentate μ-1κ:2κ mode, giving neutral coordination polymers [{Ln(tepa)(μ-OH)}{sub 2}(μ-1κ:2κ-Sn{sub 2}Se{sub 6})]{sub n}. The La(2){sup 3+} ion in 1 is in a 10-fold coordination environment of LaN{sub 6}O{sub 2}Se{sub 2}, whereas the La(1){sup 3+} ions in 1 and 2 are in 9-fold coordinated environments forming polyhedra LaN{sub 6}ClSe{sub 2} and LaN{sub 8}Se, respectively. The Sm{sup 3+} and Eu{sup 3+} ions in 3 and 4 are both in an 8-fold coordination environment of LnN{sub 5}O{sub 2}Se. Compounds 1-4 exhibit optical band gaps between 2.21 and 2.42 eV. Their thermal stabilities were investigated by thermogravimetric analyses.

  3. Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT

    International Nuclear Information System (INIS)

    Lenka, T. R.; Panda, A. K.

    2011-01-01

    Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

  4. Photoelectric characteristics of metal-Ga{sub 2}O{sub 3}-GaAs structures

    Energy Technology Data Exchange (ETDEWEB)

    Kalygina, V. M., E-mail: Kalygina@ngs.ru; Vishnikina, V. V.; Petrova, Yu. S.; Prudaev, I. A.; Yaskevich, T. M. [National Research Tomsk State University (Russian Federation)

    2015-03-15

    We investigate the effect of thermal annealing in argon and of oxygen plasma processing on the photoelectric properties of GaAs-Ga{sub 2}O{sub 3}-Me structures. Gallium-oxide films are fabricated by photostimulated electrochemical oxidation of epitaxial gallium-arsenide layers with n-type conductivity. The as-deposited films were amorphous, but their processing in oxygen plasma led to the nucleation of β-Ga{sub 2}O{sub 3} crystallites. The unannealed films are nontransparent in the visible and ultraviolet (UV) ranges and there is no photocurrent in structures based on them. After annealing at 900°C for 30 min, the gallium-oxide films contain only β-Ga{sub 2}O{sub 3} crystallites and become transparent. Under illumination of the Ga{sub 2}O{sub 3}-GaAs structures with visible light, the photocurrent appears. This effect can be attributed to radiation absorption in GaAs. The photocurrent and its voltage dependence are determined by the time of exposure to the oxygen plasma. In the UV range, the sensitivity of the structures increases with decreasing radiation wavelength, starting at λ ≤ 230 nm. This is due to absorption in the Ga{sub 2}O{sub 3} film. Reduction in the structure sensitivity with an increase in the time of exposure to oxygen plasma can be caused by the incorporation of defects both at the Ga{sub 2}O{sub 3}-GaAs interface and in the Ga{sub 2}O{sub 3} film.

  5. Comparison of hybrid {sup 68}Ga-PSMA PET/MRI and {sup 68}Ga-PSMA PET/CT in the evaluation of lymph node and bone metastases of prostate cancer

    Energy Technology Data Exchange (ETDEWEB)

    Freitag, Martin T.; Roethke, Matthias; Schlemmer, Heinz-Peter [German Cancer Research Center, Department of Radiology, Heidelberg (Germany); Radtke, Jan P. [German Cancer Research Center, Department of Radiology, Heidelberg (Germany); University Hospital Heidelberg, Department of Urology, Heidelberg (Germany); Hadaschik, Boris A. [University Hospital Heidelberg, Department of Urology, Heidelberg (Germany); Kopp-Schneider, A. [German Cancer Research Center, Department of Bioinformatics and Statistics, Heidelberg (Germany); Eder, Matthias; Kopka, Klaus [German Cancer Research Center, Division of Radiopharmaceutical Chemistry, Heidelberg (Germany); Haberkorn, Uwe [University Hospital Heidelberg, Department of Nuclear Medicine, Heidelberg (Germany); German Cancer Research Center, Clinical Cooperation Unit Nuclear Medicine, Heidelberg (Germany); Afshar-Oromieh, Ali [University Hospital Heidelberg, Department of Nuclear Medicine, Heidelberg (Germany)

    2016-01-15

    To evaluate the reproducibility of the combination of hybrid PET/MRI and the {sup 68}Ga-PSMA-11 tracer in depicting lymph node (LN) and bone metastases of prostate cancer (PC) in comparison with that of PET/CT. A retrospective analysis of 26 patients who were subjected to {sup 68}Ga-PSMA PET/CT{sub low-dose} (1 h after injection) followed by PET/MRI (3 h after injection) was performed. MRI sequences included T1-w native, T1-w contrast-enhanced, T2-w fat-saturated and diffusion-weighted sequences (DWI{sub b800}). Discordant PET-positive and morphological findings were evaluated. Standardized uptake values (SUV) of PET-positive LNs and bone lesions were quantified and their morphological size and conspicuity determined. Comparing the PET components, the proportion of discordant PSMA-positive suspicious findings was very low (98.5 % of 64 LNs concordant, 100 % of 28 bone lesions concordant). Two PET-positive bone metastases could not be confirmed morphologically using CT{sub low-dose}, but could be confirmed using MRI. In 12 of 20 patients, 47 PET-positive LNs (71.9 %) were smaller than 1 cm in short axis diameter. There were significant linear correlations between PET/MRI SUVs and PET/CT SUVs in the 64 LN metastases (p < 0.0001) and in the 28 osseous metastases (p < 0.0001) for SUV{sub mean} and SUV{sub max}, respectively. The LN SUVs were significantly higher on PET/MRI than on PET/CT (p{sub SUVmax} < 0.0001; p{sub SUVmean} < 0.0001) but there was no significant difference between the bone lesion SUVs (p{sub SUVmax} = 0.495; p{sub SUVmean} = 0.381). Visibility of LNs was significantly higher on MRI using the T1-w contrast-enhanced fat-saturated sequence (p = 0.013), the T2-w fat-saturated sequence (p < 0.0001) and the DWI sequence (p < 0.0001) compared with CT{sub low-dose}. For bone lesions, only the overall conspicuity was higher on MRI compared with CT{sub low-dose} (p < 0.006). Nodal and osseous metastases of PC are accurately and reliably depicted by hybrid PET

  6. Gas sensing with AlGaN/GaN 2DEG channels

    NARCIS (Netherlands)

    Offermans, P.; Vitushinsky, R.; Crego-Calama, M.; Brongersma, S.H.

    2011-01-01

    AlGaN/GaN shows great promise as a generic platform for (bio-)chemical sensing because of its robustness and intrinsic sensitivity to surface charge or dipoles. Here, we employ the two-dimensional electron gas (2DEG) formed at the interface of AlGaN/GaN layers grown on Si substrates for the

  7. A family of acetato-diphenoxo triply bridged dimetallic Zn(II)Ln(III) complexes: SMM behavior and luminescent properties.

    Science.gov (United States)

    Oyarzabal, Itziar; Artetxe, Beñat; Rodríguez-Diéguez, Antonio; García, JoséÁngel; Seco, José Manuel; Colacio, Enrique

    2016-06-21

    Eleven dimetallic Zn(II)-Ln(III) complexes of the general formula [Zn(µ-L)(µ-OAc)Ln(NO3)2]·CH3CN (Ln(III) = Pr (1), Nd (2), Sm (3), Eu (4), Gd (5), Tb (6), Dy (7), Ho (8), Er (9), Tm (10), Yb (11)) have been prepared in a one-pot reaction from the compartmental ligand N,N'-dimethyl-N,N'-bis(2-hydroxy-3-formyl-5-bromo-benzyl)ethylenediamine (H2L). In all these complexes, the Zn(II) ions occupy the internal N2O2 site whereas the Ln(III) ions show preference for the O4 external site. Both metallic ions are bridged by an acetate bridge, giving rise to triple mixed diphenoxido/acetate bridged Zn(II)Ln(III) compounds. The Nd, Dy, Er and Yb complexes exhibit field induced single-ion magnet (SIM) behaviour, with Ueff values ranging from 14.12 to 41.55 K. The Er complex shows two relaxation processes, but only the second relaxation process with an energy barrier of 21.0 K has been characterized. The chromophoric L(2-) ligand is able to act as an "antenna" group, sensitizing the near-infrared (NIR) Nd(III) and Yb(III)-based luminescence in complexes 2 and 11 and therefore, both compounds can be considered as magneto-luminescent materials. In addition, the Sm(III), Eu(III) and Tb(III) derivatives exhibit characteristic emissions in the visible region.

  8. On the radiative corrections α2lnα to the positronium decay rate

    International Nuclear Information System (INIS)

    Khriplovich, I.B.; Elkhovskij, A.S.

    1990-01-01

    The radiative corrections ∼α 2 ln α to the positronium decay rate are calculated in the Breit approximation which is shown to be quite adequate for the problem. For orthopositronium the result coincides with the previous one, for parapositronium it differs from the old results. 9 refs

  9. Mercury(II) selective sensors based on AlGaN/GaN transistors

    International Nuclear Information System (INIS)

    Asadnia, Mohsen; Myers, Matthew; Akhavan, N.D.; O'Donnell, Kane; Umana-Membreno, Gilberto A.; Mishra, U.K.; Nener, Brett; Baker, Murray; Parish, Giacinta

    2016-01-01

    This work presents the first polymer approach to detect metal ions using AlGaN/GaN transistor-based sensor. The sensor utilised an AlGaN/GaN high electron mobility transistor-type structure by functionalising the gate area with a polyvinyl chloride (PVC) based ion selective membrane. Sensors based on this technology are portable, robust and typically highly sensitive to the target analyte; in this case Hg 2+ . This sensor showed a rapid and stable response when it was introduced to solutions of varying Hg 2+ concentrations. At pH 2.8 in a 10 −2  M KNO 3 ion buffer, a detection limit below 10 −8  M and a linear response range between 10 −8  M-10 −4  M were achieved. This detection limit is an order of magnitude lower than the reported detection limit of 10 −7  M for thioglycolic acid monolayer functionalised AlGaN/GaN HEMT devices. Detection limits of approximately 10 −7  M and 10 −6  M in 10 −2  M Cd(NO 3 ) 2 and 10 −2  M Pb(NO 3 ) 2 ion buffers were also achieved, respectively. Furthermore, we show that the apparent gate response was near-Nernstian under various conditions. X-ray photoelectron spectroscopy (XPS) experiments confirmed that the sensing membrane is reversible after being exposed to Hg 2+ solution and rinsed with deionised water. The success of this study precedes the development of this technology in selectively sensing multiple ions in water with use of the appropriate polymer based membranes on arrays of devices. - Highlights: • This work is the first polymer approach to detect metal ions using AlGaN/GaN transistor-based sensor. • The sensor utilised an AlGaN/GaN transistor by functionalising the gate area with a polyvinyl chloride (PVC) based membrane. • The sensor showed a rapid and linear response between 10 −8 M-10 −4 M for Hg 2+ detection at pH 2.8 in a 10 −2 M KNO 3 ion buffer. • Detection limits of approximately 10 −7 M and 10 −6 M in 10 −2 M Cd(NO 3 ) 2 and 10 −2 M Pb(NO 3 ) 2 ion buffers

  10. Isolating GaSb membranes grown metamorphically on GaAs substrates using highly selective substrate removal etch processes

    Energy Technology Data Exchange (ETDEWEB)

    Lavrova, Olga [Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Electrical and Computer Engineering. Center for High Technology Materials; Balakrishnan, Ganesh [Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Electrical and Computer Engineering. Center for High Technology Materials

    2017-02-24

    The etch rates of NH4OH:H2O2 and C6H8O7:H2O2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH4OH:H2O2 solution has a greater etch rate differential for the GaSb/GaAs material system than C6H8O7:H2O2 solution. The selectivity of NH4OH:H2O2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11471 ± 1691 whereas that of C6H8O7:H2O2 has been measured up to 143 ± 2. The etch contrast has been verified by isolating 2 μm thick GaSb epi-layers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high-resolution X-Ray diffraction (HR-XRD) and atomic force microscopy (AFM).

  11. Effect of A-TIG Welding Process on the Weld Attributes of Type 304LN and 316LN Stainless Steels

    Science.gov (United States)

    Vasudevan, M.

    2017-03-01

    The specific activated flux has been developed for enhancing the penetration performance of TIG welding process for autogenous welding of type 304LN and 316LN stainless steels through systematic study. Initially single-component fluxes were used to study their effect on depth of penetration and tensile properties. Then multi-component activated flux was developed which was found to produce a significant increase in penetration of 10-12 mm in single-pass TIG welding of type 304LN and 316LN stainless steels. The significant improvement in penetration achieved using the activated flux developed in the present work has been attributed to the constriction of the arc and as well as reversal of Marangoni flow in the molten weld pool. The use of activated flux has been found to overcome the variable weld penetration observed in 316LN stainless steel with TIG welds compared to that of the welds produced by conventional TIG welding on the contrary the transverse strength properties of the 304LN and 316LN stainless steel welds produced by A-TIG welding exceeded the minimum specified strength values of the base metals. Improvement in toughness values were observed in 316LN stainless steel produced by A-TIG welding due to refinement in the weld microstructure in the region close to the weld center. Thus, activated flux developed in the present work has greater potential for use during the TIG welding of structural components made of type 304LN and 316LN stainless steels.

  12. Oxidation Behavior of Surface-modified Stainless Steel 316LN in Supercritical-CO{sub 2} Environment

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sung Hwan; Heo, Jin Woo; Kim, Hyunm Yung; Jang, Chang Heui [KAIST, Daejeon (Korea, Republic of)

    2016-05-15

    Compared to other working fluids such as helium or nitrogen, S-CO{sub 2} offers a higher efficiency at operating temperatures of advanced reactors above 550 .deg. C. Moreover, the S-CO{sub 2} cycle is expected to have a significantly smaller footprint compared to other power conversion cycles, resulting in a broader range of applications with lower capital costs. Currently, stainless steel 316 is considered as the candidate structural material for the SFR. In comparison, it is well known that alumina (Al{sub 2}O{sub 3}) have superior oxidation and carburization resistance specifically at higher temperatures where α-Al{sub 2}O{sub 3} may form. Thus, various surface modification techniques have been applied to mostly Ni-base alloys so that a protective and continuous Al-rich oxide layer forms on the surface, conferring superior oxidation and carburization resistance. In this study, SS 316LN was deposited with Al via physical vapor deposition (PVD) method followed by heat treatment processes to develop an Al-rich layer at the surface. The specimens are to be exposed to high temperature S-CO{sub 2} environment to evaluate the oxidation and carburization resistance. Stainless steel 316LN was surface-modified to develop an Al-rich layer for improvement of oxidation behavior in S-CO{sub 2} environment. As the test temperature of 600 .deg. C is not sufficiently high for the formation of protective α-Al{sub 2}O{sub 3} formation, pre-oxidation of surface modified SS 316LN was conducted.

  13. Synthesis and evaluation of a "6"8Ga labeled folic acid derivative for targeting folate receptors

    International Nuclear Information System (INIS)

    Jain, Akanksha; Mathur, Anupam; Pandey, Usha; Bhatt, Jyotsna; Mukherjee, Archana; Ram, Ramu; Sarma, Haladhar Dev; Dash, Ashutosh

    2016-01-01

    Present work evaluates the potential of a newly synthesized "6"8Ga-NOTA-folic acid conjugate for PET imaging of tumors over-expressing folate receptors (FRs). NOTA-folic acid conjugate was synthesized and characterized. It was radiolabeled with "6"8Ga in ≥ 95% radiolabeling yields. In vitro cell binding studies showed a maximum cell uptake of 1.7±0.4% per million KB cells which was completely blocked on addition of cold folic acid showing specificity towards the FRs. However, further studies in tumor xenografts are warranted in order to assess the potential of "6"8Ga-folic acid complex for imaging tumors over-expressing FRs. - Highlights: • NOTA-Bn-(3-aminopropyl) folic acid conjugate was synthesized and characterized by "1H-NMR, ESI-MS and HPLC analysis. • NOTA-folic acid conjugate radiolabeled with "6"8Ga in >95% yields and high serum stability (≥95%) upto 1 h. • In vitro studies in KB cells showed specificity of NOTA-Bn-(3-aminopropyl) folic acid. • A maximum cell uptake of 1.7±0.4% per million KB cells was observed for "6"8Ga-NOTA-folic acid.

  14. Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage

    Science.gov (United States)

    Watahiki, Tatsuro; Yuda, Yohei; Furukawa, Akihiko; Yamamuka, Mikio; Takiguchi, Yuki; Miyajima, Shinsuke

    2017-11-01

    Heterojunction p-Cu2O/n-β-Ga2O3 diodes were fabricated on an epitaxially grown β-Ga2O3(001) layer. The reverse breakdown voltage of these p-n diodes reached 1.49 kV with a specific on-resistance of 8.2 mΩ cm2. The leakage current of the p-n diodes was lower than that of the Schottky barrier diode due to the higher barrier height against the electron. The ideality factor of the p-n diode was 1.31. It indicated that some portion of the recombination current at the interface contributed to the forward current, but the diffusion current was the dominant. The forward current more than 100 A/cm2 indicated the lower conduction band offset at the hetero-interface between Cu2O and Ga2O3 layers than that predicted from the bulk properties, resulting in such a high forward current without limitation. These results open the possibility of advanced device structures for wide bandgap Ga2O3 to achieve higher breakdown voltage and lower on-resistance.

  15. Structure and properties of novel cobaltates Ln.sub.0.3./sub.CoO.sub.2./sub. (Ln = La, Pr, and Nd)

    Czech Academy of Sciences Publication Activity Database

    Knížek, Karel; Jirák, Zdeněk; Hejtmánek, Jiří; Maryško, Miroslav; Buršík, Josef

    2012-01-01

    Roč. 111, č. 7 (2012), "07D707-1"-"07D707-3" ISSN 0021-8979 R&D Projects: GA ČR GA203/09/1036; GA ČR GA202/09/0421 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z40320502 Keywords : thermoelectric and thermomagnetic effects * heat capacity * saturation moments and magnetic susceptibilities * nonmetals * Insulators * low-field transport Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.210, year: 2012

  16. Monodisperse and hollow structured Y{sub 2}O{sub 3}:Ln{sup 3+} (Ln = Eu, Dy, Er, Tm) nanospheres: A facile synthesis and multicolor-tunable luminescence properties

    Energy Technology Data Exchange (ETDEWEB)

    Li, Ruiqing; Zi, Wenwen; Li, Linlin; Liu, Lu; Zhang, Junjun [College of Chemistry, Jilin University, Changchun 130026 (China); Zou, Lianchun, E-mail: zoulianchun@126.com [Teaching Center of Basic Courses, Jilin University, Changchun 130062 (China); Gan, Shucai, E-mail: gansc@jlu.edu.cn [College of Chemistry, Jilin University, Changchun 130026 (China)

    2014-12-25

    Highlights: • We reported a simple route to synthesize the Y{sub 2}O{sub 3} HNSs. • A possible formation mechanism of the Y{sub 2}O{sub 3} HNSs was proposed. • The Ln-doped Y{sub 2}O{sub 3} HNSs exhibit characteristic emission with different colors. • White-light-emitting phosphor Y{sub 2}O{sub 3}:Tm{sup 3+}, Dy{sup 3+} was also successfully synthesized. - Abstract: A novel, fast and simple method was developed to synthesize the undoped and lanthanide-doped yttrium oxide hollow nanospheres (Y{sub 2}O{sub 3}⋅HNSs) with multicolored downconversion emission under mild conditions by employing poly (acrylic acid sodium salt) microspheres (PAAS MSs) as active templates followed by a subsequent calcination process. The structure, morphology, formation process, and fluorescent properties are well investigated using various techniques. The results show that the samples can be well indexed to the pure cubic phase of Y{sub 2}O{sub 3}. The possible formation mechanism of the PAAS MSs, PAA-Y precursor, and Y{sub 2}O{sub 3} HNSs are proposed and discussed in detail. Upon ultraviolet excitation, the obtained Y{sub 2}O{sub 3}:Ln{sup 3+} (Ln = Eu, Dy, Er, Tm) HNSs exhibit strong red, yellow–green, blue, yellow emission, respectively. Moreover, a novel single-phased and near-UV-pumped white-light-emitting phosphor Y{sub 2}O{sub 3}:Tm{sup 3+}, Dy{sup 3+} was also successfully fabricated through optimizing the molar ratio among Tm{sup 3+} and Dy{sup 3+} in the Y{sub 2}O{sub 3} host. This material may find potential applications in field-emission display devices and white ultraviolet light-emitting diodes (UV LEDs). Furthermore, this synthesis route may be of great significance in the preparation of other hollow spherical materials.

  17. DIMENSI METRIK GRAPH LOBSTER Ln (q;r

    Directory of Open Access Journals (Sweden)

    PANDE GDE DONY GUMILAR

    2013-05-01

    Full Text Available The metric dimension of connected graph G is the cardinality of minimum resolving set in graph G. In this research, we study how to find the metric dimension of lobster graph Ln (q;r. Lobster graph Ln (q;r is a regular lobster graph with vertices backbone on the main path, every backbone vertex is connected to q hand vertices and every hand vertex is connected to r finger vertices, with n, q, r element of N. We obtain the metric dimension of lobster graph L2 (1;1 is 1, the metric dimension of lobster graph L2 (1;1 for n > 2 is 2.

  18. PIP2 epigenetically represses rRNA genes transcription interacting with PHF8

    Czech Academy of Sciences Publication Activity Database

    Uličná, Lívia; Kalendová, Alžběta; Kalasová, Ilona; Vacík, Tomáš; Hozák, Pavel

    2018-01-01

    Roč. 1863, č. 3 (2018), s. 266-275 ISSN 1388-1981 R&D Projects: GA ČR GA15-08738S; GA MŠk(CZ) ED1.1.00/02.0109; GA MŠk(CZ) LM2015062 Institutional support: RVO:68378050 Keywords : pip2 * phf8 * rDNA transcription * H3K9me2 * Nucleus Subject RIV: EB - Genetics ; Molecular Biology Impact factor: 5.547, year: 2016

  19. Core level photoelectron spectroscopy of LiGaS2 and Ga-S bonding in complex sulfides

    International Nuclear Information System (INIS)

    Atuchin, V.V.; Isaenko, L.I.; Kesler, V.G.; Lobanov, S.I.

    2010-01-01

    The electronic parameters of the lithium thiogallate LiGaS 2 have been evaluated by X-ray photoelectron spectroscopy (XPS). Spectral features of all constituent element core levels and Auger lines have been considered. The Ga-S bonding effects in Ga-bearing sulfide crystals have been discussed using binding energy difference Δ 2p (S-Ga) = BE(S 2p) - BE(Ga 3d) as a representative parameter to quantify the valence electron shift from gallium to sulfur atoms. The value Δ 2p (S-Ga) = 141.9 eV found for LiGaS 2 is very close to that evaluated for AgGaS 2 . This relation is an indicator of closely coincident ionicity of Ga-S bonds in LiGaS 2 and AgGaS 2 .

  20. Ordered oxygen deficient '112'perovskites, LnBaCo2 O5⋅ 50 ...

    Indian Academy of Sciences (India)

    ... Refresher Courses · Symposia · Live Streaming. Home; Journals; Bulletin of Materials Science; Volume 32; Issue 3. Ordered oxygen deficient '112' perovskites, LnBaCo2O5.50+: complex magnetism and transport properties. B Raveau Md Motin Seikh V Pralong V Caignaert. Volume 32 Issue 3 June 2009 pp 305-312 ...

  1. Density of Ga2O3 Liquid

    OpenAIRE

    Dingwell, Donald B.

    1992-01-01

    The density of Ga2O3 liquid in equilibrium with air has been measured at 18000 to 19000C using an Ir double-bob Archimedean method. The data yield the following description of the density of Ga2O3 liquid: ρ= 4.8374(84)–0.00065(12)(T −18500C). This density-temperature relationship is compared with the partial molar volume of Ga2O3 in glasses in the systems CaO–Ga2O3–SiO2 and Na2O–Ga2O3–SiO2, corrected to the glass transition temperature using thermal expansivities. The comparison illustrates t...

  2. Study of Moessbauer effect on LiFe5-x Alx O8, LiFe 5-x Gax O8 and LiGa5-x Fex O8 systems

    International Nuclear Information System (INIS)

    Barthem, V.M.T.S.

    1982-01-01

    The measures obtained by Moessbauer spectroscopy from LiFe 5-x Ga x O 8 and LiFe 5-x Al x O 8 systems are presented. A comparative study of the influences of dopant diamagnetic ions on magnetic structures of lithium ferrite was performed. The LiGa 5-x Fe x O 8 systems were analysed based on the existing data from LiAl 5-x Fe x O 8 systems, otaining informations about the iron ion behaviour in both matrices. (M.C.K.) [pt

  3. Synthesis, second-harmonic generation (SHG), and photoluminescence (PL) properties of noncentrosymmetric bismuth selenite solid solutions, Bi2-xLnxSeO5 (Ln = La and Eu; x = 0-0.3)

    Science.gov (United States)

    Qi, Hai-Xin; Jo, Hongil; Oh, Seung-Jin; Ok, Kang Min

    2018-02-01

    A series of La3+ or Eu3+-doped noncentrosymmetric (NCS) bismuth selenite solid solutions, Bi2-xLnxSeO5 (x = 0.1, 0.2, and 0.3), have been successfully synthesized via standard solid-state reactions under vacuum with Bi2O3, La2O3 (or Eu2O3), and SeO2 as starting materials. Crystal structures and phase purities of the resultant materials were thoroughly characterized by powder X-ray diffraction using the Rietveld method. The results clearly show that the reported materials crystallize in the orthorhombic space group, Abm2 (No. 39), and exhibit pseudo-three-dimensional frameworks consisting of BiO3, BiO5, and SeO3 polyhedra that share edges and corners. Detailed diffraction studies indicate that the cell volume of Bi2-xLnxSeO5 decreases with an increasing amount of Ln3+ on the Bi3+ sites. However, no ordering between Ln3+ and Bi3+ was observed in the Bi2-xLnxSeO5 solid solutions. Powder second-harmonic generation (SHG) measurements, using 1064 nm radiation, reveal that SHG efficiencies of Bi2-xLnxSeO5 solid solutions continuously decrease as more Ln3+ cations are added to the sites of polarizable Bi3+ cations. Photoluminescence (PL) measurements on Bi2-xEuxSeO5 exhibit three specific emission peaks at 592, 613, and 702 nm (5D0 → 7F1, 2, 4) owing to the 4f-4f intrashell transitions of Eu3+ ions.

  4. Tuning high frequency magnetic properties and damping of FeGa, FeGaN and FeGaB thin films

    Directory of Open Access Journals (Sweden)

    Derang Cao

    2017-11-01

    Full Text Available A series of FeGa, FeGaN and FeGaB films with varied oblique angles were deposited by sputtering method on silicon substrates, respectively. The microstructure, soft magnetism, microwave properties, and damping factor for the films were investigated. The FeGa films showed a poor high frequency magnetic property due to the large stress itself. The grain size of FeGa films was reduced by the additional N element, while the structure of FeGa films was changed from the polycrystalline to amorphous phase by the involved B element. As a result, N content can effectively improve the magnetic softness of FeGa film, but their high frequency magnetic properties were still poor both when the N2/Ar flow rate ratio is 2% and 5% during the deposition. The additional B content significantly led to the excellent magnetic softness and the self-biased ferromagnetic resonance frequency of 1.83 GHz for FeGaB film. The dampings of FeGa films were adjusted by the additional N and B contents from 0.218 to 0.139 and 0.023, respectively. The combination of these properties for FeGa films are helpful for the development of magnetostrictive microwave devices.

  5. Magnetism of cyano-bridged hetero-one-dimensional Ln3+-M3+ complexes (Ln3+ = Sm, Gd, Yb; M3+ = FeLS, Co).

    Science.gov (United States)

    Figuerola, Albert; Diaz, Carmen; Ribas, Joan; Tangoulis, Vassilis; Sangregorio, Claudio; Gatteschi, Dante; Maestro, Miguel; Mahía, José

    2003-08-25

    The reaction of Ln(NO(3))(3).aq with K(3)[Fe(CN)(6)] or K(3)[Co(CN)(6)] and 2,2'-bipyridine in water led to five one-dimensional complexes: trans-[M(CN)(4)(mu-CN)(2)Ln(H(2)O)(4) (bpy)](n)().XnH(2)O.1.5nbpy (M = Fe(3+) or Co(3+); Ln = Sm(3+), Gd(3+), or Yb(3+); X = 4 or 5). The structures for [Fe(3)(+)-Sm(3+)] (1), [Fe(3)(+)-Gd(3+)] (2), [Fe(3)(+)-Yb(3+)] (3), [Co(3)(+)-Gd(3+)] (4), and [Co(3)(+)-Yb(3+)] (5) have been solved; they crystallize in the triclinic space P1 and are isomorphous. The [Fe(3+)-Sm(3+)] complex is a ferrimagnet, its magnetic studies suggesting the onset of weak ferromagnetic 3-D ordering at 3.5 K. The [Fe(3+)-Gd(3+)] interaction is weakly antiferromagnetic. The isotropic nature of Gd(3+) allowed us to evaluate the exchange interaction (J = 0.77 cm(-)(1)).

  6. Syntheses, structures, photoluminescence and photocatalysis of 2D layered lanthanide-carboxylates with 2, 2′-dithiodibenzoic acid

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Ling; Zhong, Jie-Cen; Qiu, Xing-Tai; Sun, Yan-Qiong, E-mail: sunyq@fzu.edu.cn; Chen, Yi-Ping

    2017-02-15

    Two series of lanthanide-carboxylates, [Ln(2,2′-dtba)(2,2′-Hdtba)(EtOH)]{sub n} (I:Ln=Eu(1a), Dy(1b)) and [Ln(2,2′-dtba)(2,2′-Hdtba)(4,4′-bpy){sub 0.5}]{sub n} (II:Ln=Eu(2a), Dy(2b), Tb(2c) 2,2′-H{sub 2}dtba=2,2′-dithiodibenzoic acid, 4,4′-bpy=4,4′-bipyridine) have been synthesized under hydrothermal conditions. Interestingly, the H{sub 2}dtba organic ligand was generated by in situ S–S reaction of 2-mercaptobenzoic acid. Compounds I and II possess different 2D layered structures based on similar 1D [Ln(2,2′-dtba)]{sup +} chains. Photoluminescence studies reveal that compounds I and II exhibit strong lanthanide characteristic emission bands. Remarkably, Compounds 1b and 2a both exhibit good photocatalytic activity for degradation of Rhodamine-B (Rh-B) under the simulated sunlight irradiation. - Graphical abstract: Two series of lanthanide-carboxylates have been in situ synthesized under hydrothermal conditions. The lanthanide-carboxylates exhibit strong lanthanide characteristic emission bands and good photocatalytic activity for degradation of Rhodamine-B. - Highlights: • 2D layered lanthanide-carboxylates with 2,2′-dithiodibenzoic acid. • In situ S–S reaction of 2-mercaptobenzoic acid under hydrothermal condition. • The Emission spectra of I and II exhibit the characteristic transition of lanthanide ions. • Compounds 1b and 2a exhibit good photocatalytic activity for degradation of Rhodamine-B.

  7. Systematics in the electron transport and magnetic properties of LnBO3 perovskites

    International Nuclear Information System (INIS)

    Ganguly, P.; Rao, C.N.R.

    1980-01-01

    Systematics in the electrical and magnetic properties of transition metal perovskites LnBO 3 (Ln = rare-earth ion, B = 3d transition metal) with the variation of Ln and B ions are reviewed. The electrical resistivity and activation energy of LnBO 3 compounds increase with the decreasing size of the Ln 3+ ion for a given B ion. The low-spin to high-spin transition temperature of Co 3+ ion in LnCoO 3 similarly increase with the decrease in size of Ln 3+ while the magnetic ordering temperatures in LnVO 3 , LnFeO 3 , LnCrO 3 and LnSrCo 2 O 6 decrease with decreasing size of the rare-earth ion. These results may be understood in terms of the increasing acidity of the rare earth ion with decreasing size and the competition between the Ln 3+ and the B 3+ ions for covalency with the oxygen ions. The effect of this competition on the metal oxygen covalency and crystal field parameter is discussed in relation to the results obtained and Goodenough's phase diagram. The possibility of d-f exchange interaction in Lasub(1-x)Lnsub(x)NiOsub(3) is also discussed in the light of ESR results. (auth.)

  8. MOVPE growth of violet GaN LEDs on β-Ga2O3 substrates

    Science.gov (United States)

    Li, Ding; Hoffmann, Veit; Richter, Eberhard; Tessaro, Thomas; Galazka, Zbigniew; Weyers, Markus; Tränkle, Günther

    2017-11-01

    We report that a H2-free atmosphere is essential for the initial stage of metalorganic vapour phase epitaxy (MOVPE) growth of GaN on β-Ga2O3 to prevent the surface from damage. A simple growth method is proposed that can easily transfer established GaN growth recipes from sapphire to β-Ga2O3 with both (-2 0 1) and (1 0 0) orientations. This method features a thin AlN nucleation layer grown below 900 °C in N2 atmosphere to protect the surface of β-Ga2O3 from deterioration during further growth under the H2 atmosphere. Based on this, we demonstrate working violet vertical light emitting diodes (VLEDs) on n-conductive β-Ga2O3 substrates.

  9. PIP2 epigenetically represses rRNA genes transcription interacting with PHF8

    Czech Academy of Sciences Publication Activity Database

    Uličná, Lívia; Kalendová, Alžběta; Kalasová, Ilona; Vacík, Tomáš; Hozák, Pavel

    2018-01-01

    Roč. 1863, č. 3 (2018), s. 266-275 ISSN 1388-1981 R&D Projects: GA ČR GA15-08738S; GA MŠk(CZ) ED1.1.00/02.0109; GA MŠk(CZ) LM2015062 Institutional support: RVO:68378050 Keywords : PIP2 * PHF8 * rDNA transcription * H3K9me2 * Nucleus Subject RIV: EB - Genetics ; Molecular Biology OBOR OECD: Biochemistry and molecular biology Impact factor: 5.547, year: 2016

  10. Mercury(II) selective sensors based on AlGaN/GaN transistors

    Energy Technology Data Exchange (ETDEWEB)

    Asadnia, Mohsen, E-mail: mohsen.asadnia@mq.edu.au [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Department of Engineering, Macquarie University, NSW 2109 (Australia); Myers, Matthew [School of Chemistry and Biochemistry, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); CSIRO Energy Flagship, Kensington, Western Australia 6151 (Australia); Akhavan, N.D. [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); O' Donnell, Kane [Department of Imaging and Applied Physics, Curtin University, Bentley, Western Australia 6102 (Australia); Umana-Membreno, Gilberto A. [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Mishra, U.K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106 (United States); Nener, Brett [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Baker, Murray [School of Chemistry and Biochemistry, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Parish, Giacinta [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia)

    2016-11-02

    This work presents the first polymer approach to detect metal ions using AlGaN/GaN transistor-based sensor. The sensor utilised an AlGaN/GaN high electron mobility transistor-type structure by functionalising the gate area with a polyvinyl chloride (PVC) based ion selective membrane. Sensors based on this technology are portable, robust and typically highly sensitive to the target analyte; in this case Hg{sup 2+}. This sensor showed a rapid and stable response when it was introduced to solutions of varying Hg{sup 2+} concentrations. At pH 2.8 in a 10{sup −2} M KNO{sub 3} ion buffer, a detection limit below 10{sup −8} M and a linear response range between 10{sup −8} M-10{sup −4} M were achieved. This detection limit is an order of magnitude lower than the reported detection limit of 10{sup −7} M for thioglycolic acid monolayer functionalised AlGaN/GaN HEMT devices. Detection limits of approximately 10{sup −7} M and 10{sup −6} M in 10{sup −2} M Cd(NO{sub 3}){sub 2} and 10{sup −2} M Pb(NO{sub 3}){sub 2} ion buffers were also achieved, respectively. Furthermore, we show that the apparent gate response was near-Nernstian under various conditions. X-ray photoelectron spectroscopy (XPS) experiments confirmed that the sensing membrane is reversible after being exposed to Hg{sup 2+} solution and rinsed with deionised water. The success of this study precedes the development of this technology in selectively sensing multiple ions in water with use of the appropriate polymer based membranes on arrays of devices. - Highlights: • This work is the first polymer approach to detect metal ions using AlGaN/GaN transistor-based sensor. • The sensor utilised an AlGaN/GaN transistor by functionalising the gate area with a polyvinyl chloride (PVC) based membrane. • The sensor showed a rapid and linear response between 10{sup −8} M-10{sup −4} M for Hg{sup 2+} detection at pH 2.8 in a 10{sup −2} M KNO{sub 3} ion buffer. • Detection limits of

  11. Electronic phase separation in the rare-earth manganates (La sub 1 sub - sub x Ln sub x) sub 0 sub . sub 7 Ca sub 0 sub . sub 3 MnO sub 3 (Ln = Nd, Gd and Y)

    CERN Document Server

    Sudheendra, L

    2003-01-01

    Electron transport and magnetic properties of three series of manganates of the formula (La sub 1 sub - sub x Ln sub x) sub 0 sub . sub 7 Ca sub 0 sub . sub 3 MnO sub 3 with Ln = Nd, Gd and Y, wherein only the average A-site cation radius (r sub A ) and associated disorder vary, without affecting the Mn sup 4 sup + /Mn sup 3 sup + ratio, have been investigated in an effort to understand the nature of phase separation. All three series of manganates show saturation magnetization characteristic of ferromagnetism, with the ferromagnetic T sub c decreasing with increasing x up to a critical value of x, x sub c (x sub c = 0.6, 0.3, 0.2 respectively for Nd, Gd, Y). For x > x sub c , the magnetic moments are considerably smaller, showing a small increase around T sub M , the value of T sub M decreasing slightly with increase in x or decrease in (r sub A ). The ferromagnetic compositions (x x sub c are insulating. The magnetic and electrical resistivity behaviour of these manganates is consistent with the occurrence...

  12. Size-tunable phosphorescence in colloidal metastable gamma-Ga2O3 nanocrystals.

    Science.gov (United States)

    Wang, Ting; Farvid, Shokouh S; Abulikemu, Mutalifu; Radovanovic, Pavle V

    2010-07-14

    We report a colloidal synthesis of gallium oxide (Ga(2)O(3)) nanocrystals having metastable cubic crystal structure (gamma phase) and uniform size distribution. Using the synthesized nanocrystal size series we demonstrate for the first time a size-tunable photoluminescence in Ga(2)O(3) from ultraviolet to blue, with the emission shifting to lower energies with increasing nanocrystal size. The observed photoluminescence is dominated by defect-based donor-acceptor pair recombination and has a lifetime of several milliseconds. Importantly, the decay of this phosphorescence is also size dependent. The phosphorescence energy and the decay rate increase with decreasing nanocrystal size, owing to a reduced donor-acceptor separation. These results allow for a rational and predictable tuning of the optical properties of this technologically important material and demonstrate the possibility of manipulating the localized defect interactions via nanocrystal size. Furthermore, the same defect states, particularly donors, are also implicated in electrical conductivity rendering monodispersed Ga(2)O(3) nanocrystals a promising material for multifunctional optoelectronic structures and devices.

  13. Serum Levels of Matrix Metalloproteinases 2 and 9 and TGFBR2 Gene Screening in Patients with Ascending Aortic Dilatation

    Czech Academy of Sciences Publication Activity Database

    Šímová, J.; Škvor, J.; Reissigová, Jindra; Dudra, J.; Lindner, J.; Čapek, P.; Zvárová, Jana

    2013-01-01

    Roč. 59, č. 4 (2013), s. 154-161 ISSN 0015-5500 R&D Projects: GA MŠk LN00B107; GA MŠk(CZ) 1M06014 Institutional support: RVO:67985807 Keywords : aortic dilatation * MMP-2 * MMP-9 * TGFBR2 Subject RIV: FA - Cardiovascular Diseases incl. Cardiotharic Surgery Impact factor: 0.778, year: 2013 http://fb.cuni.cz/file/5695/FB2013A0021.pdf

  14. Synthesis of the first 11-vertex arachno-dicarbathiaborane anion, [1,6,7-C2SB8H11](-). Theoretical refinement of its structure

    Czech Academy of Sciences Publication Activity Database

    Janoušek, Zbyněk; Holub, Josef; Hnyk, Drahomír; Londesborough, Michael Geoffrey Stephen; Shoemaker, R. K.

    2003-01-01

    Roč. 22, č. 27 (2003), s. 3541-3545 ISSN 0277-5387 R&D Projects: GA MŠk LN00A028 Institutional research plan: CEZ:AV0Z4032918 Keywords : boranes * heteroboranes * NMR spectroscopy Subject RIV: CA - Inorganic Chemistry Impact factor: 1.584, year: 2003

  15. Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures

    Science.gov (United States)

    Zhang, Feng; Ikeda, Masao; Zhang, Shuming; Liu, Jianping; Tian, Aiqin; Wen, Pengyan; Cheng, Yang; Yang, Hui

    2017-10-01

    Thermal etching effect of GaN during growth interruption in the metalorganic chemical vapor deposition reactor was investigated in this paper. The thermal etching rate was determined by growing a series of AlGaN/GaN superlattice structures with fixed GaN growth temperature at 735 °C and various AlGaN growth temperature changing from 900 °C to 1007 °C. It was observed that the GaN layer was etched off during the growth interruption when the growth temperature ramped up to AlGaN growth temperature. The etching thickness was determined by high resolution X-ray diffractometer and the etching rate was deduced accordingly. An activation energy of 2.53 eV was obtained for the thermal etching process.

  16. DFT and CCSD(T) study of the A2H3- (A = Al, Ga) isomerization, [Ga2(μ-H)(μ-H2)]- and [Ga2(μ-H3)]- unprecedented hydrido-bimetallic structures

    International Nuclear Information System (INIS)

    Guermoune, Abdeladim; Jarid, Abdellah

    2007-01-01

    Total potential energy surfaces (PES) are scanned in order to study the isomerization of the A 2 H 3 - (A = Al, Ga) anions. Al 2 H 3 - PES is characterized by six minima and seven transition structures which are connectable with themselves. Indeed of these 12 same extrema, the Ga 2 H 3 - PES has three other minima and four TSs. These structures exhibit an activated H 2 molecule in one or both Ga atoms coordination sphere where the Ga atom seems imply its metallic character via its occupied d-orbital. We have also localized two unusual structures: a minimum having M 2 (μ-H)(μ-H 2 )-like structure and a transition with M 2 (μ-H 3 )-like arrangement where the H 3 entity is coordinated to both Ga atoms. The connectivity of all these extrema brings to the fore an eventual fluxional behaviour of these compounds

  17. Isothermal cross-sections of Hf-Sc-Ga(800 deg C) and Hf-Ti-Ga (750 deg C) phase diagrams

    International Nuclear Information System (INIS)

    Markiv, V.Ya.; Belyavina, N.N.

    1981-01-01

    Isothermal cross sections of Hf-Sc-Ga (800 deg C) and Hf-Ti-Ga (750 deg C) state diagrams are plotted. The existence of two ternary Hfsub(0.1-0.8)Scsub(0.9)-sub(0.2)Ga and Hfsub(0.8)Scsub(0.2)Gasub(3) phases is stated in the Hf-Sc-Ga system. The crystal structure of these compounds investigated by the powder method belongs to the structural α-MoB and ZrAl 3 types respectively. Continuous rows of (Hf, Sc 5 Ga 5 , (Hf, Ti)Ga 3 and (Hf, Ti)Ga 2 solid solutions are formed in the investigated systems. Essential quantity of the third component dissolve binary Sc 5 Ga 4 , Sc 2 Ga 3 (15 and 30 at % Hf respectively), Hf 5 Ga 4 , HfGa 2 (20, 10 at. % Sc), Hf 5 Ga 4 , HfGa, Hf 5 Ga 3 , Hf 2 Ga 3 (48, 30, 46, 20 at. % Ti) gallides [ru

  18. YRh{sub 2}Ga. A new intergrowth variant of MgNi{sub 2} and CeCo{sub 3}B{sub 2} related slabs

    Energy Technology Data Exchange (ETDEWEB)

    Seidel, Stefan; Rodewald, Ute C.; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie

    2017-09-01

    The gallide YRh{sub 2}Ga was synthesized by melting of the elements in an arc-furnace followed by annealing in a sealed silica tube in an induction furnace. YRh{sub 2}Ga crystallizes with a new structure type: P6{sub 3}/mmc, a=552.2(1), c=3119.5(6) pm, wR=0.0957, 497 F{sup 2} values, and 34 variables. It is the n=1 member of the RE{sub 2+n}T{sub 3+3n}X{sub 1+2n} structure series with Laves phase (MgNi{sub 2} type in the present case) and CaCu{sub 5} (CeCo{sub 3}B{sub 2} type in the present case) related slabs in the Parthe intergrowth concept.

  19. Lanthanide stannate pyrochlores (Ln2Sn2O7; Ln  =  Nd, Gd, Er) at high pressure

    Science.gov (United States)

    Turner, Katlyn M.; Tracy, Cameron L.; Mao, Wendy L.; Ewing, Rodney C.

    2017-12-01

    Lanthanide stannate pyrochlores (Ln2Sn2O7; Ln  =  Nd, Gd, and Er) were investigated in situ to 50 GPa in order to determine their structural response to compression and compare their response to that of lanthanide titanate, zirconate, and hafnate pyrochlores. The cation radius ratio of A3+/B4+ in pyrochlore oxides (A2B2O7) is thought to be the dominant feature that influences their response on compression. The ionic radius of Sn4+ is intermediate to that of Ti4+, Zr4+, and Hf4+, but the 〈Sn-O〉 bond in stannate pyrochlore is more covalent than the 〈B-O〉 bonds in titanates, zirconate, and hafnates. In stannates, based on in situ Raman spectroscopy, pyrochlore cation and anion sublattices begin to disorder with the onset of compression, first measured at 0.3 GPa. The extent of sublattice disorder versus pressure is greater in stannates with a smaller Ln3+ cation. Stannate pyrochlores (Fd-3m) begin a sluggish transformation to an orthorhombic, cotunnite-like structure at ~28 GPa similar transitions have been observed in titanate, zirconate, and hafnate pyrochlores at varying pressures (18-40 GPa) with cation radius ratio. The extent of the phase transition versus pressure varies directly with the size of the Ln3+ cation. Post-decompression from ~50 GPa, Er2Sn2O7 and Gd2Sn2O7 adopt a pyrochlore structure, rather than the multi-scale defect-fluorite  +  weberite-type structure adopted by Nd2Sn2O7 that is characteristic of titanate, zirconate, and hafnate pyrochlores under similar conditions. Like pyrochlore titanates, zirconates, and hafnates, the bulk modulus, B 0, of stannates varies linearly and inversely with cation radius ratio from 1 1 1 GPa (Nd2Sn2O7) to 251 GPa (Er2Sn2O7). The trends of bulk moduli in stannates in this study are in excellent agreement with previous experimental studies on stannates and suggest that the size of the Ln3+ cation is the primary determining factor of B 0. Additionally, when normalized to r A

  20. Axially symmetric U-O-Ln- and U-O-U-containing molecules from the control of uranyl reduction with simple f-block halides

    International Nuclear Information System (INIS)

    Arnold, Polly L.; Cowie, Bradley E.; Suvova, Marketa; Zegke, Markus; Love, Jason B.; Magnani, Nicola; Colineau, Eric; Griveau, Jean-Christophe; Caciuffo, Roberto

    2017-01-01

    The reduction of U"V"I uranyl halides or amides with simple Ln"I"I or U"I"I"I salts forms highly symmetric, linear, oxo-bridged trinuclear U"V/Ln"I"I"I/U"V, Ln"I"I"I/U"I"V/Ln"I"I"I, and U"I"V/U"I"V/U"I"V complexes or linear Ln"I"I"I/U"V polymers depending on the stoichiometry and solvent. The reactions can be tuned to give the products of one- or two-electron uranyl reduction. The reactivity and magnetism of these compounds are discussed in the context of using a series of strongly oxo-coupled homo- and heterometallic poly(f-block) chains to better understand fundamental electronic structure in the f-block. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Axially symmetric U-O-Ln- and U-O-U-containing molecules from the control of uranyl reduction with simple f-block halides

    Energy Technology Data Exchange (ETDEWEB)

    Arnold, Polly L.; Cowie, Bradley E.; Suvova, Marketa; Zegke, Markus; Love, Jason B. [EaStCHEM School of Chemistry, University of Edinburgh (United Kingdom); Magnani, Nicola; Colineau, Eric; Griveau, Jean-Christophe; Caciuffo, Roberto [European Commission, Directorate for Nuclear Safety and Security, Joint Research Centre, Karlsruhe (Germany)

    2017-08-28

    The reduction of U{sup VI} uranyl halides or amides with simple Ln{sup II} or U{sup III} salts forms highly symmetric, linear, oxo-bridged trinuclear U{sup V}/Ln{sup III}/U{sup V}, Ln{sup III}/U{sup IV}/Ln{sup III}, and U{sup IV}/U{sup IV}/U{sup IV} complexes or linear Ln{sup III}/U{sup V} polymers depending on the stoichiometry and solvent. The reactions can be tuned to give the products of one- or two-electron uranyl reduction. The reactivity and magnetism of these compounds are discussed in the context of using a series of strongly oxo-coupled homo- and heterometallic poly(f-block) chains to better understand fundamental electronic structure in the f-block. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Introducing ionic and/or hydrogen bonds into the SAM//Ga2O3 top-interface of Ag(TS)/S(CH2)nT//Ga2O3/EGaIn junctions.

    Science.gov (United States)

    Bowers, Carleen M; Liao, Kung-Ching; Yoon, Hyo Jae; Rappoport, Dmitrij; Baghbanzadeh, Mostafa; Simeone, Felice C; Whitesides, George M

    2014-06-11

    Junctions with the structure Ag(TS)/S(CH2)nT//Ga2O3/EGaIn (where S(CH2)nT is a self-assembled monolayer, SAM, of n-alkanethiolate bearing a terminal functional group T) make it possible to examine the response of rates of charge transport by tunneling to changes in the strength of the interaction between T and Ga2O3. Introducing a series of Lewis acidic/basic functional groups (T = -OH, -SH, -CO2H, -CONH2, and -PO3H) at the terminus of the SAM gave values for the tunneling current density, J(V) in A/cm(2), that were indistinguishable (i.e., differed by less than a factor of 3) from the values observed with n-alkanethiolates of equivalent length. The insensitivity of the rate of tunneling to changes in the terminal functional group implies that replacing weak van der Waals contact interactions with stronger hydrogen- or ionic bonds at the T//Ga2O3 interface does not change the shape (i.e., the height or width) of the tunneling barrier enough to affect rates of charge transport. A comparison of the injection current, J0, for T = -CO2H, and T = -CH2CH3--two groups having similar extended lengths (in Å, or in numbers of non-hydrogen atoms)--suggests that both groups make indistinguishable contributions to the height of the tunneling barrier.

  3. Genetic and proteomic characterization of rpoB mutations and their effect on nematicidal activity in Photorhabdus luminescens LN2.

    Directory of Open Access Journals (Sweden)

    Xuehong Qiu

    Full Text Available Rifampin resistant (Rif(R mutants of the insect pathogenic bacterium Photorhabdus luminescens LN2 from entomopathogenic nematode Heterorhabditis indica LN2 were genetically and proteomically characterized. The Rif(R mutants showed typical phase one characters of Photorhabdus bacteria, and insecticidal activity against Galleria mellonella larvae, but surprisingly influenced their nematicidal activity against axenic infective juveniles (IJs of H. bacteriophora H06, an incompatible nematode host. 13 out of 34 Rif(R mutants lost their nematicidal activity against H06 IJs but supported the reproduction of H06 nematodes. 7 nematicidal-producing and 7 non-nematicidal-producing Rif(R mutants were respectively selected for rpoB sequence analysis. rpoB mutations were found in all 14 Rif(R mutants. The rpoB (P564L mutation was found in all 7 mutants which produced nematicidal activity against H06 nematodes, but not in the mutants which supported H06 nematode production. Allelic exchange assays confirmed that the Rif-resistance and the impact on nematicidal activity of LN2 bacteria were conferred by rpoB mutation(s. The non-nematicidal-producing Rif(R mutant was unable to colonize in the intestines of H06 IJs, but able to colonize in the intestines of its indigenous LN2 IJs. Proteomic analysis revealed different protein expression between wild-type strain and Rif(R mutants, or between nematicidal-producing and non nematicidal-producing mutants. At least 7 putative proteins including DsbA, HlpA, RhlE, RplC, NamB (a protein from T3SS, and 2 hypothetical proteins (similar to unknown protein YgdH and YggE of Escherichia coli respectively were probably involved in the nematicidal activity of LN2 bacteria against H06 nematodes. This hypothesis was further confirmed by creating insertion-deletion mutants of three selected corresponding genes (the downregulated rhlE and namB, and upregulated dsbA. These results indicate that the rpoB mutations greatly influence the

  4. Solid solutions of thallium in TlGaSe2, TlGaS2, and TlInS2

    International Nuclear Information System (INIS)

    Voroshilov, Yu. V.; Potorii, M.V.; Shevchenko, S.V.

    1986-01-01

    The authors study the nature of the dissolution of thallium in ternary phases. They have synthesized alloys of the stoichiometric compositions TlGaS 2 , TlGaSe 2 , and T1InS 2 , and their solid solutions, maximally enriched in thallium, the compositions of which were Tl /SUB 1.34/ GA /SUB 0.89/ S 2 , Tl /SUB 1.31/ Ga /SUB 0.90/ Se 2 , and Tl /SUB 1.15/ In /SUB 0.95/ S /SUB 2./ . Samples were synthesized from the elemental components of the following purities: gallium of V4 grade; indium of V4 grade; thallium of T1000 grade; selenium of special purity 22-4 grade, and sulfur of special purity garde. The compositions were checked by x-ray-phase-(DRON-0.5) and microstructural-analyses with simultaneous determination of the density and microhardness of the samples. It is found that the lattic parameter increases and the increase in the density and microhardness points to strengthening of the structure during the formation of the solid solutions

  5. Schottky barrier diode embedded AlGaN/GaN switching transistor

    International Nuclear Information System (INIS)

    Park, Bong-Ryeol; Lee, Jung-Yeon; Lee, Jae-Gil; Lee, Dong-Myung; Cha, Ho-Young; Kim, Moon-Kyung

    2013-01-01

    We developed a Schottky barrier diode (SBD) embedded AlGaN/GaN switching transistor to allow negative current flow during off-state condition. An SBD was embedded in a recessed normally-off AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET). The fabricated device exhibited normally-off characteristics with a gate threshold voltage of 2.8 V, a diode turn-on voltage of 1.2 V, and a breakdown voltage of 849 V for the anode-to-drain distance of 8 µm. An on-resistance of 2.66 mΩcm 2 was achieved at a gate voltage of 16 V in the forward transistor mode. Eliminating the need for an external diode, the SBD embedded switching transistor has advantages of significant reduction in parasitic inductance and chip area. (paper)

  6. Growth of hexagonal NaGdF{sub 4} nanocrystals based on cubic Ln{sup 3+}: CaF{sub 2} precursors and the multi-color upconversion emissions

    Energy Technology Data Exchange (ETDEWEB)

    Lei, Lei; Chen, Daqin, E-mail: dqchen@fjirsm.ac.cn; Yu, Yunlong; Zhang, Rui; Ling, Hang; Xu, Ju; Huang, Feng; Wang, Yuansheng, E-mail: yswang@fjirsm.ac.cn

    2014-04-05

    Graphical abstract: We reported a novel hetero-valence cation exchange route to synthesize Ln: NaGdF4 upconversion nanocrystals for the first time. -- Highlights: • The Ln3+: NaGdF4 nanocrystals were synthesized based on the Ln3+: CaF2 precursors. • The microstructures of nanocrystals were characterized. • The multi-color upconversion emissions were easily realized. -- Abstract: Lanthanide-doped upconversion nanomaterials have attracted great attention recently for their potential applications in the fields of bio-label, three-dimensional display, solar cell and so on. In this article, we report a new strategy to prepare hexagonal Ln{sup 3+}:NaGdF{sub 4} upconversion nanocrystals. Unlike the routine way of synthesizing NaGdF{sub 4} nanocrystals through nucleation and growth, the formation of hexagonal NaGdF{sub 4} nanocrystals herein is realized based on the Ln{sup 3+}-doped cubic CaF{sub 2} precursors, following a hetero-valence cation exchange process between Gd{sup 3+}/Na{sup +} and Ca{sup 2+}. Evidently, Ln{sup 3+} dopants in the CaF{sub 2} precursors are retained in the finally formed hexagonal NaGdF{sub 4} nanocrystals and, subsequently, multi-color upconversion emissions are easily realized by simply adjusting the Ln{sup 3+} dopant species and contents in the CaF{sub 2} precursors. This novel hetero-valence cation exchange route may open up a new pathway to synthesize nanomaterials that cannot be fabricated directly.

  7. Ethanol surface chemistry on MBE-grown GaN(0001), GaOx/GaN(0001), and Ga2O3(2¯01).

    Science.gov (United States)

    Kollmannsberger, Sebastian L; Walenta, Constantin A; Winnerl, Andrea; Knoller, Fabian; Pereira, Rui N; Tschurl, Martin; Stutzmann, Martin; Heiz, Ueli

    2017-09-28

    In this work, ethanol is used as a chemical probe to study the passivation of molecular beam epitaxy-grown GaN(0001) by surface oxidation. With a high degree of oxidation, no reaction from ethanol to acetaldehyde in temperature-programmed desorption experiments is observed. The acetaldehyde formation is attributed to a mechanism based on α-H abstraction from the dissociatively bound alcohol molecule. The reactivity is related to negatively charged surface states, which are removed upon oxidation of the GaN(0001) surface. This is compared with the Ga 2 O 3 (2¯01) single crystal surface, which is found to be inert for the acetaldehyde production. These results offer a toolbox to explore the surface chemistry of nitrides and oxynitrides on an atomic scale and relate their intrinsic activity to systems under ambient atmosphere.

  8. Brush Seals for Cryogenic Applications: Performance, Stage Effects, and Preliminary Wear Results in LN2 and LH2

    Science.gov (United States)

    Proctor, Margaret P.; Walker, James F.; Perkins, H. Douglas; Hoopes, Joan F.; Williamson, G. Scott

    1996-01-01

    Brush seals are compliant contacting seals and have significantly lower leakage than labyrinth seals in gas turbine applications. Their long life and low leakage make them candidates for use in rocket engine turbopumps. Brush seals, 50.8 mm (2 in.) in diameter with a nominal 127-micron (0.005-in.) radial interference, were tested in liquid nitrogen (LN2) and liquid hydrogen (LH2) at shaft speeds up to 35,000 and 65,000 rpm, respectively, and at pressure drops up to 1.21 MPa (175 psid) per brush. A labyrinth seal was also tested in liquid nitrogen to provide a baseline. The LN2 leakage rate of a single brush seal with an initial radial shaft interference of 127 micron (0.005 in.) measured one-half to one-third the leakage rate of a 12-tooth labyrinth seal with a radial clearance of 127 micron (0.005 in.). Two brushes spaced 7.21 micron (0.248 in.) apart leaked about one-half as much as a single brush, and two brushes tightly packed together leaked about three-fourths as much as a single brush. The maximum measured groove depth on the Inconel 718 rotor with a surface finish of 0.81 micron (32 microinch) was 25 micron (0.0010 in.) after 4.3 hr of shaft rotation in liquid nitrogen. The Haynes-25 bristles wore approximately 25 to 76 micron (0.001 to 0.003 in.) under the same conditions. Wear results in liquid hydrogen were significantly different. In liquid hydrogen the rotor did not wear, but the bristle material transferred onto the rotor and the initial 127 micron (0.005 in.) radial interference was consumed. Relatively high leakage rates were measured in liquid hydrogen. More testing is required to verify the leakage performance, to validate and calibrate analysis techniques, and to determine the wear mechanisms. Performance, staging effects, and preliminary wear results are presented.

  9. Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)x(Al2O3)1−x as potential gate dielectrics for GaN/AlxGa1−xN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Partida-Manzanera, T.; Roberts, J. W.; Sedghi, N.; Potter, R. J.; Bhat, T. N.; Zhang, Z.; Tan, H. R.; Dolmanan, S. B.; Tripathy, S.

    2016-01-01

    This paper describes a method to optimally combine wide band gap Al 2 O 3 with high dielectric constant (high-κ) Ta 2 O 5 for gate dielectric applications. (Ta 2 O 5 ) x (Al 2 O 3 ) 1−x thin films deposited by thermal atomic layer deposition (ALD) on GaN-capped Al x Ga 1−x N/GaN high electron mobility transistor (HEMT) structures have been studied as a function of the Ta 2 O 5 molar fraction. X-ray photoelectron spectroscopy shows that the bandgap of the oxide films linearly decreases from 6.5 eV for pure Al 2 O 3 to 4.6 eV for pure Ta 2 O 5 . The dielectric constant calculated from capacitance-voltage measurements also increases linearly from 7.8 for Al 2 O 3 up to 25.6 for Ta 2 O 5 . The effect of post-deposition annealing in N 2 at 600 °C on the interfacial properties of undoped Al 2 O 3 and Ta-doped (Ta 2 O 5 ) 0.12 (Al 2 O 3 ) 0.88 films grown on GaN-HEMTs has been investigated. These conditions are analogous to the conditions used for source/drain contact formation in gate-first HEMT technology. A reduction of the Ga-O to Ga-N bond ratios at the oxide/HEMT interfaces is observed after annealing, which is attributed to a reduction of interstitial oxygen-related defects. As a result, the conduction band offsets (CBOs) of the Al 2 O 3 /GaN-HEMT and (Ta 2 O 5 ) 0.16 (Al 2 O 3 ) 0.84 /GaN-HEMT samples increased by ∼1.1 eV to 2.8 eV and 2.6 eV, respectively, which is advantageous for n-type HEMTs. The results demonstrate that ALD of Ta-doped Al 2 O 3 can be used to control the properties of the gate dielectric, allowing the κ-value to be increased, while still maintaining a sufficient CBO to the GaN-HEMT structure for low leakage currents

  10. Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (-201)

    Science.gov (United States)

    Yuan, Lei; Zhang, Hongpeng; Jia, Renxu; Guo, Lixin; Zhang, Yimen; Zhang, Yuming

    2018-03-01

    Energy band alignments between series band of Al-rich high-k materials (HfO2)x(Al2O3)1-x and β-Ga2O3 are investigated using X-Ray Photoelectron Spectroscopy (XPS). The results exhibit sufficient conduction band offsets (1.42-1.53 eV) in (HfO2)x(Al2O3)1-x/β-Ga2O3. In addition, it is also obtained that the value of Eg, △Ec, and △Ev for (HfO2)x(Al2O3)1-x/β-Ga2O3 change linearly with x, which can be expressed by 6.98-1.27x, 1.65-0.56x, and 0.48-0.70x, respectively. The higher dielectric constant and higher effective breakdown electric field of (HfO2)x(Al2O3)1-x compared with Al2O3, coupled with sufficient barrier height and lower gate leakage makes it a potential dielectric for high voltage β-Ga2O3 power MOSFET, and also provokes interest in further investigation of HfAlO/β-Ga2O3 interface properties.

  11. Core level photoelectron spectroscopy of LiGaS{sub 2} and Ga-S bonding in complex sulfides

    Energy Technology Data Exchange (ETDEWEB)

    Atuchin, V.V., E-mail: atuchin@thermo.isp.nsc.r [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, 13, Lavrentieva Ave., Novosibirsk 90, 630090 (Russian Federation); Isaenko, L.I. [Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, Novosibirsk 90, 630090 (Russian Federation); Kesler, V.G. [Laboratory of Physical Bases of Integrated Microelectronics, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, 630090 (Russian Federation); Lobanov, S.I. [Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, Novosibirsk 90, 630090 (Russian Federation)

    2010-05-14

    The electronic parameters of the lithium thiogallate LiGaS{sub 2} have been evaluated by X-ray photoelectron spectroscopy (XPS). Spectral features of all constituent element core levels and Auger lines have been considered. The Ga-S bonding effects in Ga-bearing sulfide crystals have been discussed using binding energy difference {Delta}{sub 2p}(S-Ga) = BE(S 2p) - BE(Ga 3d) as a representative parameter to quantify the valence electron shift from gallium to sulfur atoms. The value {Delta}{sub 2p}(S-Ga) = 141.9 eV found for LiGaS{sub 2} is very close to that evaluated for AgGaS{sub 2}. This relation is an indicator of closely coincident ionicity of Ga-S bonds in LiGaS{sub 2} and AgGaS{sub 2}.

  12. Effects of buffers and pH on in vitro binding of 67Ga by L1210 leukemic cells

    International Nuclear Information System (INIS)

    Glickson, J.D.; Webb, J.; Gams, R.A.

    1974-01-01

    The effect of sodium nitrate and a series of buffers on in vitro 67 Ga binding to L1210 leukemic cells at pH 6.8 +- 0.2 and 37 0 at concentrations of 10 -7 to 10 -2 M has been investigated. The relative ability of these agents to inhibit cellular incorporation of 67 Ga is given. Inhibition probably results from formation of gallium(III) complexes which are either impermeable to the tumor membrane or which compete with intracellular receptor complexes. However, direct interaction of buffers with the cell membrane or with gallium(III) receptors, as well as effects of buffers on cellular metabolism, have not been excluded. A monotonic decrease in the cellular incorporation of 67 Ga occurs between pH 6.2 and 7.8 in the presence of the inert buffer, 10 -2 M morpholinopropane sulfonic acid. (U.S.)

  13. Influence of Alkali Metal Substitution on the Phase Transition Behavior of CsGaQ2 (Q = S, Se

    Directory of Open Access Journals (Sweden)

    Daniel Friedrich

    2017-12-01

    Full Text Available The formation of solid solution series Cs1−xMxGaQ2-mC64 (M = K, Rb; Q = S, Se; x = 0–1 was studied by X-ray diffraction and spectroscopic methods, revealing a complete miscibility of CsGaQ2-mC64 with RbGaQ2 and KGaSe2, and a large miscibility gap with KGaS2. All solid solution members exhibit similar Raman spectra, indicating the covalent Ga-Q bonding character. The similar optical band gaps likewise further contribute to this conclusion. Up to a certain degree of substitution, these solid solutions undergo a phase transition similar to CsGaQ2-mC64. The influence of the substitution parameter x on phase transition process was investigated in situ using high-temperature X-ray powder diffraction experiments. Phase-pure solid solutions of the high-temperature polymorphs Cs1−xMxGaQ2-mC16 were obtained up to xmax(K = 0.1 and xmax(Rb = 0.3. The crystal structures of these new CsGaQ2-mC16 analogous high-temperature phases were refined from synchrotron diffraction data by Rietveld-refinement.

  14. Nanoblast synthesis and consolidation of (La0.8Sr0.2)(Ga0.9Mg0.1)O(3-delta) under Spark plasma sintering conditions.

    Science.gov (United States)

    Vasylkiv, Oleg; Borodianska, Hanna; Badica, Petre; Zhen, Yongda; Tok, Alfred

    2009-01-01

    Four-cation nanograined strontium and magnesium doped lanthanum gallate (La0.8Sr0.2) (Ga0.9Mg0.1)O(3-delta) (LSGM) and its composite with 2 wt% of ceria (LSGM-Ce) were prepared. Morphologically homogeneous nanoreactors, i.e., complex intermediate metastable aggregates of desired composition were assembled by spray atomization technique, and subsequently loaded with nanoparticles of highly energetic C3H6N6O6. Rapid nanoblast calcination technique was applied and the final composition was synthesized within the preliminary localized volumes of each single nanoreactor on the first step of spark plasma treatment. Subsequent SPS consolidations of nanostructured extremely active LSGM and LSGM-Ce powders were achieved by rapid treatment under pressures of 90-110 MPa. This technique provided the heredity of the final structure of nanosize multimetal oxide, allowed the prevention of the uncontrolled agglomeration during multicomponent aggregates assembling, subsequent nanoblast calcination, and final ultra-rapid low-temperature SPS consolidation of nanostructured ceramics. LaSrGaMgCeO(3-delta) nanocrystalline powder consisting of approximately 11 nm crystallites was consolidated to LSGM-Ce nanoceramic with average grain size of approximately 14 nm by low-temperature SPS at 1250 degrees C. Our preliminary results indicate that nanostructured samples of (La0.8Sr0.2)(Ga0.9Mg0.1)O(3-delta) with 2 wt% of ceria composed of approximataley 14 nm grains can exhibit giant magnetoresistive effect in contrast to the usual paramagnetic properties measured on the samples with larger grain size.

  15. Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Lin' an, E-mail: layang@xidian.edu.cn; Li, Yue; Wang, Ying; Xu, Shengrui; Hao, Yue [State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2016-04-28

    Asymmetric quantum-well (QW) structures including the asymmetric potential-barrier and the asymmetric potential-well are proposed for AlGaN/GaN/AlGaN resonant tunneling diodes (RTDs). Theoretical investigation gives that an appropriate decrease in Al composition and thickness for emitter barrier as well as an appropriate increase of both for collector barrier can evidently improve the negative-differential-resistance characteristic of RTD. Numerical simulation shows that RTD with a 1.5-nm-thick GaN well sandwiched by a 1.3-nm-thick Al{sub 0.15}Ga{sub 0.85}N emitter barrier and a 1.7-nm-thick Al{sub 0.25}Ga{sub 0.75}N collector barrier can yield the I-V characteristic having the peak current (Ip) and the peak-to-valley current ratio (PVCR) of 0.39 A and 3.6, respectively, about double that of RTD with a 1.5-nm-thick Al{sub 0.2}Ga{sub 0.8}N for both barriers. It is also found that an introduction of InGaN sub-QW into the diode can change the tunneling mode and achieve higher transmission coefficient of electron. The simulation demonstrates that RTD with a 2.8-nm-thick In{sub 0.03}Ga{sub 0.97}N sub-well in front of a 2.0-nm-thick GaN main-well can exhibit the I-V characteristic having Ip and PVCR of 0.07 A and 11.6, about 7 times and double the value of RTD without sub-QW, respectively. The purpose of improving the structure of GaN-based QW is to solve apparent contradiction between the device structure and the device manufacturability of new generation RTDs for sub-millimeter and terahertz applications.

  16. Optical characteristics of BaGa2S4:Ho3+ and BaGa2Se4:Ho3+ single crystals

    International Nuclear Information System (INIS)

    Choe, Sung-Hyu; Jin, Moon-Seog; Kim, Wha-Tek

    2005-01-01

    BaGa 2 S 4 , BaGa 2 S 4 :Ho 3+ , BaGa 2 Se 4 , and BaGa 2 Se 4 :Ho 3+ single crystals were grown by using the chemical transport reaction method. The optical energy gaps of the single crystals were investigated in the temperature region from 11 K to 300 K. The temperature dependence of the optical energy gap was well fitted by the Varshni equation. Two broad emission bands were observed in the photoluminescence spectra of the single crystals. These bands were attributed to donor-acceptor pair recombinations. Sharp emission peaks were observed in the BaGa 2 S 4 :Ho 3+ and the BaGa 2 Se 4 :Ho 3+ single crystals and were assigned to radiation recombination between split Stark levels of Ho 3+ .

  17. A dynamic model to explain hydration behaviour along the lanthanide series

    International Nuclear Information System (INIS)

    Duvail, M.; Spezia, R.; Vitorge, P.

    2008-01-01

    An understanding of the hydration structure of heavy atoms, such as transition metals, lanthanides and actinides, in aqueous solution is of fundamental importance in order to address their solvation properties and chemical reactivity. Herein we present a systematic molecular dynamics study of Ln 3+ hydration in bulk water that can be used as reference for experimental and theoretical research in this and related fields. Our study of hydration structure and dynamics along the entire Ln 3+ series provides a dynamic picture of the CN behavioural change from light (CN=9 predominating) to heavy (CN=8 predominating) lanthanides consistent with the exchange mechanism proposed by Helm, Merbach and co-workers. This scenario is summarized in this work. The hydrated light lanthanides are stable TTP structures containing two kinds of water molecules: six molecules forming the trigonal prism and three in the centre triangle. Towards the middle of the series both ionic radii and polarizabilities decrease, such that first-shell water-water repulsion increases and water-cation attraction decreases. This mainly applies for molecules of the centre triangle of the nine-fold structure. Thus, one of these molecules stay in the second hydration sphere of the lanthanide for longer average times, as one progresses along the lanthanide series. The interchange between predominantly CN=9 and CN=8 is found between Tb and Dy. Therefore, we propose a model that determines the properties governing the change in the first-shell coordination number across the series, confirming the basic hypothesis proposed by Helm and Merbach. We show that it is not a sudden change in behaviour, but rather that it results from a statistical predominance of one first hydration shell structure containing nine water molecules over one containing eight. This is observed progressively across the series. (O.M.)

  18. Cyclotron production of 68Ge with a Ga2O target

    International Nuclear Information System (INIS)

    Naidoo, C.; Walt, T.N. van der; Raubenheimer, H.G.

    2002-01-01

    Systematic information of exchange behavior of Ge(IV) and Ga(III) in varying oxalic acid (0.05M and 0.25M) and sulphuric acid (0.005M-2M range) mixtures is presented. These findings were used to develop a separation involving 68 Ge from a Ga 2 O target material. A method based on acid dissolution of the target and chromatography on an anion exchange resin (Bio-Rad R AG1-X8) was developed. The separated 68 Ge has high radionuclidic purity and an acceptable chemical purity. (author)

  19. Microstructural features of dissimilar welds between 316LN austenitic stainless steel and alloy 800

    International Nuclear Information System (INIS)

    Sireesha, M.; Sundaresan, S.

    2000-01-01

    For joining type 316LN austenitic stainless steel to modified 9Cr-1Mo steel for power plant application, a trimetallic configuration using an insert piece (such as alloy 800) of intermediate thermal coefficient of expansion (CTE) has been sometimes suggested for bridging the wide gap in CTE between the two steels. Two joints are thus involved and this paper is concerned with the weld between 316LN and alloy 800. These welds were produced using three types of filler materials: austenitic stainless steels corresponding to 316,16Cr-8Ni-2Mo, and the nickel-base Inconel 182 1 . The weld fusion zones and the interfaces with the base materials were characterised in detail using light and transmission electron microscopy. The 316 and Inconel 182 weld metals solidified dendritically, while the 16-8-2(16%Cr-8%Ni-2%Mo) weld metal showed a predominantly cellular substructure. The Inconel weld metal contained a large number of inclusions when deposited from flux-coated electrodes, but was relatively inclusion-free under inert gas-shielded welding. Long-term elevated-temperature aging of the weld metals resulted in embrittling sigma phase precipitation in the austenitic stainless steel weld metals, but the nickel-base welds showed no visible precipitation, demonstrating their superior metallurgical stability for high-temperature service. (orig.)

  20. Degradation of AlGaN/GaN High Electron Mobility Transistors with Different AlGaN Layer Thicknesses under Strong Electric Field

    International Nuclear Information System (INIS)

    Ling, Yang; Yue, Hao; Xiao-Hua, Ma; Jing-Jing, Ma; Cheng, Zhu

    2010-01-01

    The degradation of AlGaN/GaN high electron mobility transistors (HEMTs) has a close relationship with a model of traps in AlGaN barriers as a result of high electric field. We mainly discuss the impacts of strong electrical field on the AlGaN barrier thickness of AlGaN/GaN HEMTs. It is found that the device with a thin AlGaN barrier layer is more easily degraded. We study the degradation of four parameters, i.e. the gate series resistance R Gate , channel resistance R channel , gate current I G,off at V GS = −5 and V DS = 0.1 V, and drain current I D,max at V GS = 2 and V DS = 5 V. In addition, the degradation mechanisms of the device electrical parameters are also investigated in detail. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  1. Er{sub 1.33}Pt{sub 3}Ga{sub 8}: A modulated variant of the Er{sub 4}Pt{sub 9}Al{sub 24}-structure type

    Energy Technology Data Exchange (ETDEWEB)

    Oswald, Iain W.H. [Department of Chemistry and Biochemistry, University of Texas at Dallas, Richardson, TX 75080 (United States); Gourdon, Olivier [Research and Development, ZS Pharma, Coppell, TX 75109 (United States); Bekins, Amy; Evans, Jess [Department of Chemistry and Biochemistry, University of Texas at Arlington, Arlington, TX 76019 (United States); Treadwell, LaRico J. [Department of Chemistry and Biochemistry, University of Texas at Dallas, Richardson, TX 75080 (United States); Chan, Julia Y., E-mail: Julia.Chan@utdallas.edu [Department of Chemistry and Biochemistry, University of Texas at Dallas, Richardson, TX 75080 (United States); Macaluso, Robin T., E-mail: robin.macaluso@uta.edu [Department of Chemistry and Biochemistry, University of Texas at Arlington, Arlington, TX 76019 (United States); Department of Chemistry and Biochemistry, University of Northern Colorado, Greeley, CO 80639 (United States)

    2016-10-15

    Single crystals of Er{sub 1.33}Pt{sub 3}Ga{sub 8} were synthesized in a molten Ga flux. Er{sub 1.33}Pt{sub 3}Ga{sub 8} can be considered to be a modulated variant of the Er{sub 4}Pt{sub 9}Al{sub 24}-structure type, where the partial occupancies are ordered. Indeed, the presence of weak satellite reflections indicates a complex organization and distribution of the Er and Ga atoms within the [ErGa] slabs. The structure has been solved based on single crystal X-ray diffraction data in the monoclinic superspace group X2/m(0β0)00 with a commensurate modulated vector q=1/3b*. Precession images also indicate diffusion in the perpendicular direction indicating a partial disorder of this arrangement from layer to layer. In addition, Er{sub 1.33}Pt{sub 3}Ga{sub 8} shows antiferromagnetic ordering at T{sub N}~5 K. - Graphical abstract: A precession image of the hk0 zone showing weak, periodic, unindexed reflections indicating modulation and representation of the commensurate [ErGa] layer showing the waving modulated occupation. - Highlights: • Single crystals of Er{sub 1.33}Pt{sub 3}Ga{sub 8} were grown from gallium flux. • The structure of Er{sub 1.33}Pt{sub 3}Ga{sub 8} is compared to Er{sub 4}Pt{sub 9}Al{sub 24}. • Structure has been solved in the monoclinic superspace group X2/m(0β0)00 with a commensurate modulated vector q=1/3b*.

  2. Effect of the thin Ga2O3 layer in n+-ZnO/n-Ga2O3/p-Cu2O heterojunction solar cells

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2013-01-01

    The influence of inserting a Ga 2 O 3 thin film as an n-type semiconductor layer on the obtainable photovoltaic properties in Cu 2 O-based heterojunction solar cells was investigated with a transparent conductive Al-doped ZnO (AZO) thin film/n-Ga 2 O 3 thin film/p-Cu 2 O sheet structure. It was found that this Ga 2 O 3 thin film can greatly improve the performance of Cu 2 O-based heterojunction solar cells fabricated using polycrystalline Cu 2 O sheets that had been prepared by a thermal oxidization of copper sheets. The obtained photovoltaic properties in the AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells were strongly dependent on the deposition conditions of the Ga 2 O 3 films. The external quantum efficiency obtained in AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells was found to be greater at wavelengths below approximately 500 nm than that obtained in AZO/Cu 2 O heterojunction solar cells (i.e., prepared without a Ga 2 O 3 layer) at equivalent wavelengths. This improvement of photovoltaic properties is mainly attributed to a decrease in the level of defects at the interface between the Ga 2 O 3 thin film and the Cu 2 O sheet. Conversion efficiencies over 5% were obtained in AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells fabricated using an n-Ga 2 O 3 thin-film layer prepared with a thickness of 40–80 nm at an O 2 gas pressure of approximately 1.7 Pa by a pulsed laser deposition. - Highlights: • We demonstrate high-efficiency Cu 2 O-based p-n heterojunction solar cells. • A non-doped Ga 2 O 3 thin film was used as an n-type semiconductor layer. • The Ga 2 O 3 thin film was prepared at a low temperature by a low damage deposition. • p-type Cu 2 O sheets prepared by thermal oxidization of copper sheets were used. • Conversion efficiencies over 5% were obtained in AZO/n-Ga 2 O 3 /p-Cu 2 O solar cells

  3. Changes of serum HA and LN level in patients with pulmonary tuberculosis after therapy

    International Nuclear Information System (INIS)

    Yu Jing Zhang Hongwei; Li Jie

    2007-01-01

    Objective: To study the serum HA and LN level in patients with pulmonary tuberculosis and their response to therapy. Methods: Serum HA and LN levels were measured with RIA in: (1) 42 patients with active pulmonary tuberculosis both before and after 2 months' therapy, (2) 40 patients with non-active pulmonary TB and 330 controls. Results: The serum HA and LN level in patients with active pulmonary tubemulosis were significantly higher than those in controls (P < 0.01 ), while no significant difference could Be found Between the levels in patients with non-active pulmonary tuberculosis and controls. The serum HA and LN level in patients with active pulmonary tuberculosis dropped after therapy, but were still higher than those in controls. Significant correlation could Be found between HA and LN levels (P<0.01). The HA and LN levels were positively correlated with severity of the disease, ESR and CRP contents. Conclusion: The measurement of serum HA and LN is valuable for early diagnosis, monitoring development and assessment of therapeutic effect in patients with pulmonary tubemulosis. (authors)

  4. Magnetic properties of Aurivillius lanthanide-bismuth (LnFeO3nBi4Ti3O12 (n = 1,2 layered titanates

    Directory of Open Access Journals (Sweden)

    Tartaj, J.

    2008-06-01

    Full Text Available Bismuth titanates of Aurivillius layer-structure (BiFeO3nBi4Ti3O12, are of great technological interest because of their applications as non-volatile ferroelectric memories and high-temperature piezoelectric materials. The synthesis and crystallographic characterization of a new family of compounds (LnFeO3nBi4Ti3O12 was recently reported, in which the layers consist of LnFeO3 perovskites with a lanthanide Ln3+ substituting diamagnetic Bi3+. We report herein the magnetic properties of bulk samples, with Ln = Nd, Eu, Gd and Tb, and n = 1 and 2. Single-layer materials are paramagnetic, similar to non-substituted bismuth titanate Bi5FeTi3O15, and show crystal field effects due to the crystallographic environment of Eu3+ and Tb3+. Several anomalies are detected in the magnetization M(T of double-layer (LnFeO32Bi4Ti3O12 compounds, related to the strong magnetism of Tb and Gd, since they weakly appear for Nd and they are absent in the VanVleck Eu3+ ion and in the parent Bi6Fe2Ti3O18 compound.Los titanatos de hierro y bismuto con estructura laminar tipo Aurivillius, (BiFeO3nBi4Ti3O12, tienen un gran interés tecnológico debido a sus aplicaciones como memorias ferroeléctricas no volátiles y como piezoeléctrico cerámico de alta temperatura. La síntesis y la caracterización cristalina de una nueva familia de compuestos (LnFeO3nBi4Ti3O12 han sido recientemente reportadas, en la que el catión diamagnético Bi3+ ha sido sustituido por los paramagnéticos Ln3+ en los bloques de perovskita. Se estudian las propiedades magnéticas de muestras cerámicas en volumen con Ln = Nd, Eu, Gd y Tb, y n = 1 y 2. Los materiales con n=1 son paramagnéticos y similares al no sustituido Bi5FeTi3O15, y muestran efectos de campo cristalino debido al entorno cristalino de Eu3+ y Tb3+. Se han detectado algunas anomalías en la magnetización M(T de los compuestos n=2 (LnFeO32Bi4Ti3O12 que están relacionadas con el fuerte magnetismo de Tb y Gd, que aparecen d

  5. White lighting device from composite films embedded with hydrophilic Cu(In, Ga)S2/ZnS and hydrophobic InP/ZnS quantum dots

    Science.gov (United States)

    Kim, Jong-Hoon; Yang, Heesun

    2014-06-01

    Two types of non-Cd quantum dots (QDs)—In/Ga ratio-varied, green-to-greenish-yellow fluorescence-tuned Cu-In-Ga-S (CIGS) alloy ones, and red-emitting InP ones—are synthesized for use as down-converters in conjunction with a blue light-emitting diode (LED). Among a series of Ga-rich CI1-xGxS/ZnS core/shell QDs (x = 0.7, 0.8, and 0.9), CI0.2G0.8S/ZnS QD is chosen for the hydrophobic-to-hydrophilic surface modification via an in-situ ligand exchange and then embedded in a water-soluble polyvinyl alcohol (PVA). This free-standing composite film is utilized as a down-converter for the fabrication of a remote-type white QD-LED, but the resulting bi-colored device exhibits a cool white light with a limited color rendering index property. To improve white light qualities, another QD-polymer film of hydrophobic red InP/ZnS QD-embedding polyvinylpyrrolidone is sequentially stacked onto the CI0.2G0.8S/ZnS QD-PVA film, producing a unique dual color-emitting, flexible and transparent bilayered composite film. Tri-colored white QD-LED integrated with the bilayered QD film possesses an exceptional color rendering property through reinforcing a red spectral component and balancing a white spectral distribution.

  6. The structure and band gap design of high Si doping level Ag1−xGa1−xSixSe2 (x=1/2)

    International Nuclear Information System (INIS)

    Zhang, Shiyan; Mei, Dajiang; Du, Xin; Lin, Zheshuai; Zhong, Junbo; Wu, Yuandong; Xu, Jingli

    2016-01-01

    Ag 1−x Ga 1−x Si x Se 2 solutions with high Si doping level (x=1/2) are considered and new compound AgGaSiSe 4 has been synthesized. It crystallizes in space group Aea2 and possesses very long axis of a=63.06(1)Å. The three-dimensional framework in AgGaSiSe 4 is composed of AgSe 3 trigonal planar units, AgSe 4 tetrahedra and MSe 4 (M=Si, Ga) tetrahedra. AgGaSiSe 4 is a congruently melting compound with the melt temperature of 759 °C. The diffuse reflectance measurements reveal the band gap of 2.63 eV in AgGaSiSe 4 and the value is 0.33 eV larger than that of Ag 3 Ga 3 SiSe 8 (2.30 eV). - Graphical abstract: The Ag 1−x Ga 1−x Si x Se 2 with high Si doping level (x=1/2) has been studied and the new compound AgGaSiSe 4 was synthesized for the first time. AgGaSiSe 4 crystallizes in a new structure type in space group Aea2 and adopts a three-dimensional framework consisting of AgSe 3 trigonal planar units, AgSe 4 tetrahedra and MSe 4 (M=Si, Ge) tetrahedra. Display Omitted - Highlights: • Study of Ag 1−x Ga 1−x Si x Se 2 with high Si doping level (x=1/2). • Successful synthesis of new compound named AgGaSiSe 4 . • AgGaSiSe 4 crystallizes in space group Aea2 and adopts a three-dimensional framework. • The energy band gap of AgGaSiSe 4 is enlarged compared with Ag 3 Ga 3 SiSe 8 .

  7. Ethanol surface chemistry on MBE-grown GaN(0001), GaOx/GaN(0001), and Ga2O3(2 \\xAF 01 )

    Science.gov (United States)

    Kollmannsberger, Sebastian L.; Walenta, Constantin A.; Winnerl, Andrea; Knoller, Fabian; Pereira, Rui N.; Tschurl, Martin; Stutzmann, Martin; Heiz, Ueli

    2017-09-01

    In this work, ethanol is used as a chemical probe to study the passivation of molecular beam epitaxy-grown GaN(0001) by surface oxidation. With a high degree of oxidation, no reaction from ethanol to acetaldehyde in temperature-programmed desorption experiments is observed. The acetaldehyde formation is attributed to a mechanism based on α -H abstraction from the dissociatively bound alcohol molecule. The reactivity is related to negatively charged surface states, which are removed upon oxidation of the GaN(0001) surface. This is compared with the Ga2O3(2 ¯ 01 ) single crystal surface, which is found to be inert for the acetaldehyde production. These results offer a toolbox to explore the surface chemistry of nitrides and oxynitrides on an atomic scale and relate their intrinsic activity to systems under ambient atmosphere.

  8. New anisotropic rare earth fluorides BaR2F8(R=Y,Dy-Lu): growth and characterization

    International Nuclear Information System (INIS)

    Kaminskii, A.A.; Butashin, A.V.; Sulyanov, S.N.; Bagayev, S.N.; Eichler, H.J.; Findeisen, J.; Liu, B.; Taeuber, U.; Peuser, P.

    1998-01-01

    Polymorphism of BaR 2 F 8 compounds is analyzed, and some peculiarities of the crystal growth from the melt are discussed. We report on the orthorhombic BaLu 2 F 8 crystal with ordered structure, a new crystalline material for generating Ln 3+ activator ions. Spectroscopic and laser characteristics of Nd 3+ - and Er 3+ -doped BaLu 2 F 8 samples are discussed as representative examples. Besides, we pay special attention to monoclinic BaY 2 F 8 :Er 3+ crystals, as active media for highly efficient CW 3 μm laser-diode pumped lasers. (orig.)

  9. Study of epitaxial lateral overgrowth of semipolar (1 1 − 2 2) GaN by using different SiO2 pattern sizes

    International Nuclear Information System (INIS)

    Song, Ki-Ryong; Lee, Jae-Hwan; Han, Sang-Hyun; Yi, Hye-Rin; Lee, Sung-Nam

    2013-01-01

    Graphical abstract: - Highlights: • We examine comparative studies of semipolar ELO-GaN film. • Semipolar ELO-GaN film was grown by three step growth method. • The achievement of smooth surface morphology of semipolar ELO-GaN. • The crystal and optical properties was significantly improved by ELO process. - Abstract: We investigated the growth mode and the crystal properties of lateral epitaxial overgrowth (LEO) semipolar (1 1 − 2 2) GaN by using the various SiO 2 pattern sizes of 6, 8, 10 and 12 μm with the window width of 4.0 μm. By using three-step growth technique, we successfully obtained the fully-coalescenced semipolar (1 1 − 2 2) LEO-GaN films regardless of the SiO 2 pattern sizes. However, the coalescence thickness of LEO-GaN film was decreased with decreasing SiO 2 pattern size, indicating that the coalescence of semipolar (1 1 − 2 2) GaN was easily formed by decreasing the pattern size of SiO 2 mask. The full width at half maximums (FWHMs) of X-ray rocking curves (XRCs) of LEO-GaN films decreased with increasing SiO 2 pattern size. In the pattern size of 4 × 10 μm, we achieved the minimum XRCs FWHM of 537 and 368 arc s with two different X-ray incident beam directions of [1 1 − 2 − 3] and [1 − 1 0 0], respectively. Moreover, the photoluminescence bandedge emission of semipolar (1 1 − 2 2) GaN was 45 times increased by LEO process. Based on these results, we concluded that the LEO pattern size of 4 × 10 μm would effectively decrease crystal defects of semipolar (1 1 − 2 2) GaN epilayer, resulting in an improvement of the optical properties

  10. Optical, structural and paramagnetic properties of Eu-doped ternary sulfides ALnS.sub.2./sub. (A = Na, K, Rb; Ln = La, Gd, Lu, Y)

    Czech Academy of Sciences Publication Activity Database

    Jarý, Vítězslav; Havlák, Lubomír; Bárta, J.; Buryi, Maksym; Mihóková, Eva; Rejman, M.; Laguta, Valentyn; Nikl, Martin

    2015-01-01

    Roč. 8, č. 10 (2015), s. 6978-6998 ISSN 1996-1944 R&D Projects: GA TA ČR TA04010135; GA MŠk(CZ) LM2011029; GA MŠk LO1409 Grant - others:SAFMAT(XE) CZ.2.16/3.1.00/22132 Institutional support: RVO:68378271 Keywords : luminescence * white light emitting diode * ternary sulfide * EPR Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.728, year: 2015

  11. 1,3-thiazole as suitable antenna ligand for lanthanide photoluminescence in [LnCl{sub 3}(thz){sub 4}].0.5thz, Ln = Sm, Eu, Gd, Tb, Dy

    Energy Technology Data Exchange (ETDEWEB)

    Dannenbauer, Nicole; Mueller-Buschbaum, Klaus [Wuerzburg Univ. (Germany). Inst. for Inorganic Chemistry; Kuzmanoski, Ana; Feldmann, Claus [Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany). Inst. for Inorganic Chemistry

    2014-02-15

    The series of luminescent monomeric lanthanide thiazole complexes [LnCl{sub 3}(thz){sub 4}].0.5thz (Ln = Sm, Eu, Gd, Tb, Dy; thz = 1,3-thiazole) has been synthesised and characterised by powder and single-crystal X-ray diffraction, IR and photoluminescence spectroscopy, DTA/TG as well as elemental analysis. The colourless compounds exhibit photoluminescence in the visible region with varying quantum efficiencies up to QY = 48 % for [LnCl{sub 3}(thz){sub 4}].0.5thz. Both, the lanthanide ions as well as the thiazole ligand contribute to the luminescence. Excitation can be achieved via intra-4f transitions and by exciting the ligand, emission is observed mainly from the lanthanide ions again by 4f transitions. Thiazole can transfer energy to the lanthanide ions, which further feeds the lanthanide emission by an efficient antenna effect even at room temperature. The lanthanide ions show pentagonal-bipyramidal coordination by three chloride anions and four N atoms of 1,3-thiazole, which leads to a strong {sup 5}D{sub 0} → {sup 7}F{sub 4} transition for europium. Significant differences arise as compared to thiophene complexes because no sulphur atom is involved in the metal coordination, as the thiazole ligand is solely coordinated via its nitrogen function. (orig.)

  12. Magnetic phase diagrams of the spinels AB2xGa2-2xO4 (A = Zn, Co; B = Al, Cr) systems

    International Nuclear Information System (INIS)

    Hamedoun, M.; Masrour, R.; Bouslykhane, K.; Hourmatallah, A.; Benzakour, N.

    2008-01-01

    The magnetic properties of the spinels CoAl 2x Ga 2-2x O 4 and ZnCr 2x Ga 2-2x O 4 systems in the range 0 ≤ x ≤ 1 have been studied by mean field theory and high-temperature series expansions. By using the first theory, we have evaluated the nearest neighbour and the next-neighbour super-exchange interaction J 1 (x) and J 2 (x), respectively, for the first systems in the range 0 ≤ x ≤ 1 and J 1 (x = 1), J 2 (x = 1) for the second system. The intra-planar and the inter-planar interactions are deduced. The corresponding classical exchange energy for magnetic structure is obtained for the first system. The second theory have been applied in the spinels CoAl 2x Ga 2-2x O 4 and ZnCr 2x Ga 2-2x O 4 systems, combined with the Pade approximants method, we have obtained the magnetic phase diagrams (T N versus dilution x) in the range 0 ≤ x ≤ 1. The obtained theoretical results are in agreement with experimental ones obtained by magnetic measurements and Moessbauer spectroscopy. The threshold percolation in the second system is x p ∼ 0.4. The critical exponents associated with the magnetic susceptibility (γ) and the correlation lengths (ν) are deduced in the range 0 ≤ x ≤ 1

  13. Fe2O3-Cr2O3 system revised

    Czech Academy of Sciences Publication Activity Database

    Grygar, Tomáš; Bezdička, Petr; Dědeček, Jiří; Petrovský, Eduard; Schneeweiss, Oldřich

    2003-01-01

    Roč. 47, č. 1 (2003), s. 32-39 ISSN 0862-5468 R&D Projects: GA ČR GA205/00/1349; GA MŠk LN00A028; GA ČR GV202/98/K002; GA MŠk ME 209 Institutional research plan: CEZ:AV0Z3012916; CEZ:AV0Z4032918 Keywords : solid solutions * Vegard law * iron oxide Subject RIV: CA - Inorganic Chemistry Impact factor: 0.449, year: 2003

  14. High-pressure synthesis and crystal structures of the strontium oxogallates Sr{sub 2}Ga{sub 2}O{sub 5} and Sr{sub 5}Ga{sub 6}O{sub 14}

    Energy Technology Data Exchange (ETDEWEB)

    Kahlenberg, Volker, E-mail: volker.kahlenberg@uibk.ac.at [Institute of Mineralogy and Petrography, University of Innsbruck, Innrain 52, Innsbruck A-6020 (Austria); Goettgens, Valerie; Mair, Philipp; Schmidmair, Daniela [Institute of Mineralogy and Petrography, University of Innsbruck, Innrain 52, Innsbruck A-6020 (Austria)

    2015-08-15

    High-pressure synthesis experiments in a piston–cylinder apparatus at 1.5 GPa/3.0 GPa and 1000 °C resulted in the formation of single-crystals of Sr{sub 2}Ga{sub 2}O{sub 5} and Sr{sub 5}Ga{sub 6}O{sub 14}, respectively. The structures of both compounds have been solved from single-crystal diffraction data sets using direct methods. The first compound is orthorhombic with space group type Pbca (a=10.0021(4) Å, b=9.601(4) Å, c=10.6700(4) Å, V=1024.6(4) Å{sup 3}, M{sub r}=394.68 u, Z=8, D{sub x}=5.12 g/cm{sup 3}) and belongs to the group of single layer gallates. Individual sheets are parallel to (0 0 1) and can be built from the condensation of unbranched vierer single chains running along [0 1 0]. The layers are characterized by the presence of four- and strongly elliptical eight-membered rings of corner connected tetrahedra in UUDD and UUUUDDDD conformation. Strontium atoms are sandwiched between the tetrahedral layers for charge compensation and are coordinated by six and seven oxygen ligands, respectively. Sr{sub 2}Ga{sub 2}O{sub 5} is isotypic with several other double sulfides and selenides. To the best of our knowledge, it is the first example of an oxide with this structure type. From a structural point of view, Sr{sub 5}Ga{sub 6}O{sub 14} is a phyllogallate as well. The crystal structure adopts the monoclinic space group P2{sub 1}/c (a=8.1426(3) Å, b=8.1803(3) Å, c=10.8755(4) Å, β=91.970(4)° V=723.98(5) Å{sup 3}, M{sub r}=1080.42 u, Z=2, D{sub x}=4.96 g/cm{sup 3}). Individual sheets extend along (0 0 1). Basic building units are unbranched dreier single chains parallel to [1 0 0]. The layers contain tertiary (Q{sup 3}) und quaternary (Q{sup 4}) connected [GaO{sub 4}]-tetrahedra in the ratio 2:1 resulting in a Ga:O ratio of 3:7 and the formation of exclusively five-membered rings. Linkage between adjacent tetrahedral sheets is provided by three symmetrically independent strontium ions which are surrounded by six to eight oxygen atoms. The layers

  15. Amino Acid Formation Induced by High-power Laser in CO2/CO-N2-H2O Gas Mixtures

    Czech Academy of Sciences Publication Activity Database

    Civiš, Svatopluk; Juha, Libor; Babánková, Dagmar; Cvačka, Josef; Frank, O.; Jehlička, J.; Králiková, Božena; Krása, Josef; Kubát, Pavel; Muck, A.; Pfeifer, Miroslav; Skála, Jiří; Ullschmied, Jiří

    2004-01-01

    Roč. 386, 1/3 (2004), s. 169-173 ISSN 0009-2614 R&D Projects: GA MŠk LN00A100 Institutional research plan: CEZ:AV0Z4040901 Keywords : Prebiotic synthesis * organic-synthesis * spectroscopy Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.438, year: 2004

  16. The analysis of leakage current in MIS Au/SiO{sub 2}/n-GaAs at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Altuntas, H., E-mail: altunhalit@gmail.com [Cankiri Karatekin University, Department of Physics, Faculty of Science (Turkey); Ozcelik, S. [Gazi University, Department of Physics, Faculty of Science (Turkey)

    2013-10-15

    The aim of this study is to determine the reverse-bias leakage current conduction mechanisms in Au/SiO{sub 2}/n-GaAs metal-insulator-semiconductor type Schottky contacts. Reverse-bias current-voltage measurements (I-V) were performed at room temperature. The using of leakage current values in SiO{sub 2} at electric fields of 1.46-3.53 MV/cm, ln(J/E) vs. {radical}E graph showed good linearity. Rom this plot, dielectric constant of SiO{sub 2} was calculated as 3.7 and this value is perfect agreement with 3.9 which is value of SiO{sub 2} dielectric constant. This indicates, Poole-Frenkel type emission mechanism is dominant in this field region. On the other hand, electric fields between 0.06-0.73 and 0.79-1.45 MV/cm, dominant leakage current mechanisms were found as ohmic type conduction and space charge limited conduction, respectively.

  17. Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

    International Nuclear Information System (INIS)

    Zhang Meng; Bhattacharya, Pallab; Guo Wei; Banerjee, Animesh

    2010-01-01

    Acceptor doping of GaN with Mg during plasma-assisted molecular beam epitaxy, under N-rich conditions and a relatively high growth temperature of 740 deg. C, was investigated. The p-doping level steadily increases with increasing Mg flux. The highest doping level achieved, determined from Hall measurements, is 2.1x10 18 cm -3 . The corresponding doping efficiency and hole mobility are ∼4.9% and 3.7 cm 2 /V s at room temperature. Cross-sectional transmission electron microscopy and photoluminescence measurements confirm good crystalline and optical quality of the Mg-doped layers. An InGaN/GaN quantum dot light emitting diode (λ peak =529 nm) with p-GaN contact layers grown under N-rich condition exhibits a low series resistance of 9.8 Ω.

  18. First principles investigation of structural, electronic, elastic and thermal properties of rare-earth-doped titanate Ln2TiO5

    Directory of Open Access Journals (Sweden)

    Hui Niu

    2012-09-01

    Full Text Available Systematic first-principles calculations based on density functional theory were performed on a wide range of Ln2TiO5 compositions (Ln = La, Ce, Pr, Nd, Sm, Gd, Tb, Dy and Y in order to investigate their structural, elastic, electronic, and thermal properties. At low temperature, these compounds crystallize in orthorhombic structures with a Pnma symmetry, and the calculated equilibrium structural parameters agree well with experimental results. A complete set of elastic parameters including elastic constants, Hill's bulk moduli, Young's moduli, shear moduli and Poisson's ratio were calculated. All Ln2TiO5 are ductile in nature. Analysis of densities of states and charge densities and electron localization functions suggests that the oxide bonds are highly ionic with some degree of covalency in the Ti-O bonds. Thermal properties including the mean sound velocity, Debye temperature, and minimum thermal conductivity were obtained from the elastic constants.

  19. New lanthanide(III) complexes of chiral nonadendate macrocyclic amine derived from (1R,2R)-1,2-diaminocyclohexane and 2,6-diformyl-4-methylphenol

    Energy Technology Data Exchange (ETDEWEB)

    Paluch, Marta [Department of Chemistry, University of Wroclaw, 14 F. Joliot-Curie, 50-383 Wroclaw (Poland); Lisowski, Jerzy [Department of Chemistry, University of Wroclaw, 14 F. Joliot-Curie, 50-383 Wroclaw (Poland)], E-mail: jurekl@wchuwr.chem.uni.wroc.pl

    2008-02-28

    The series of complexes [LnH{sub 4}L(NO{sub 3}){sub 2}](NO{sub 3}){sub 2}.nH{sub 2}O (Ln = La, Ce, Pr, Nd, Gd, Tb, Ho, Er, Tm) of the positively charged protonated form of a chiral macrocyclic amine H{sub 4}L{sup +}, derived from the 3 + 3 condensation product of (1R,2R)-1,2-diaminocyclohexane and 2,6-diformyl-4-methylphenol, have been synthesized. The series of complexes Na{sub x}[LnL](X){sub y}(OH){sub x-y}.n(solv) (X = NO{sup 3-} or Cl{sup -}, and Ln = La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu) of the deprotonated anionic form of the ligand, L{sup 3-}, have also been synthesised. The complexes have been characterised by elemental analyses, {sup 1}H NMR and ESI MS spectra. The X-ray crystal structures of the [LaH{sub 4}L(NO{sub 3}){sub 2}](NO{sub 3}){sub 2}.5CH{sub 3}OH and [GdH{sub 4}L(NO{sub 3}){sub 2}](NO{sub 3}){sub 2}.5CH{sub 3}OH complexes have been determined. The two complexes are isostructural, and the protonated macrocycle acts as pentadentate ligand. The Ln(III) ion is bound to three phenolate oxygen atoms and two amine nitrogen atoms of the macrocyclic ligand and its coordination sphere is completed by the two axial bidendate nitrate anions.

  20. Band alignment of atomic layer deposited SiO2 and HfSiO4 with (\\bar{2}01) β-Ga2O3

    Science.gov (United States)

    Carey, Patrick H., IV; Ren, Fan; Hays, David C.; Gila, Brent P.; Pearton, Stephen J.; Jang, Soohwan; Kuramata, Akito

    2017-07-01

    The valence band offset at both SiO2/β-Ga2O3 and HfSiO4/β-Ga2O3 heterointerfaces was measured using X-ray photoelectron spectroscopy. Both dielectrics were deposited by atomic layer deposition (ALD) onto single-crystal β-Ga2O3. The bandgaps of the materials were determined by reflection electron energy loss spectroscopy as 4.6 eV for Ga2O3, 8.7 eV for Al2O3 and 7.0 eV for HfSiO4. The valence band offset was determined to be 1.23 ± 0.20 eV (straddling gap, type I alignment) for ALD SiO2 on β-Ga2O3 and 0.02 ± 0.003 eV (also type I alignment) for HfSiO4. The respective conduction band offsets were 2.87 ± 0.70 eV for ALD SiO2 and 2.38 ± 0.50 eV for HfSiO4, respectively.

  1. Simplifying the Reinsch algorithm for the Baker-Campbell-Hausdorff series

    Science.gov (United States)

    Van-Brunt, Alexander; Visser, Matt

    2016-02-01

    The Goldberg version of the Baker-Campbell-Hausdorff series computes the quantity Z ( X , Y ) = ln (" separators=" e X e Y ) = ∑ w g ( w ) w ( X , Y ) , where X and Y are not necessarily commuting in terms of "words" constructed from the {X, Y} "alphabet." The so-called Goldberg coefficients g(w) are the central topic of this article. This Baker-Campbell-Hausdorff series is a general purpose tool of very wide applicability in mathematical physics, quantum physics, and many other fields. The Reinsch algorithm for the truncated series permits one to calculate the Goldberg coefficients up to some fixed word length |w| by using nilpotent (|w| + 1) × (|w| + 1) matrices. We shall show how to further simplify the Reinsch algorithm, making its implementation (in principle) utterly straightforward using "off the shelf" symbolic manipulation software. Specific computations provide examples which help to provide a deeper understanding of the Goldberg coefficients and their properties. For instance, we shall establish some strict bounds (and some equalities) on the number of non-zero Goldberg coefficients. Unfortunately, we shall see that the number of nonzero Goldberg coefficients often grows very rapidly (in fact exponentially) with the word length |w|. Furthermore, the simplified Reinsch algorithm readily generalizes to many closely related but still quite distinct problems—we shall also present closely related results for the symmetric product S ( X , Y ) = ln (" separators=" e X / 2 e Y e X / 2 ) = ∑ w g S ( w ) w ( X , Y ) . Variations on such themes are straightforward. For instance, one can just as easily consider the "loop" product L ( X , Y ) = ln (" separators=" e X e Y e - X e - Y ) = ∑ w g L ( w ) w ( X , Y ) . This "loop" type of series is of interest, for instance, when considering either differential geometric parallel transport around a closed curve, non-Abelian versions of Stokes' theorem, or even Wigner rotation/Thomas precession in special

  2. Semiconducting La{sub 2}AuP{sub 3}, the metallic conductor Ce{sub 2}AuP{sub 3}, and other rare-earth gold phosphides Ln{sub 2}AuP{sub 3} with two closely related crystal structures

    Energy Technology Data Exchange (ETDEWEB)

    Eschen, M.; Kotzyba, G.; Kuennen, B.; Jeitschko, W. [Anorganisch-Chemisches Inst. der Westfaelischen Wilhelms-Univ., Muenster (Germany)

    2001-07-01

    The compounds Ln{sub 2}AuP{sub 3} were synthesized by reaction of the elemental components in evacuated silica tubes. Their crystal structures were determined from single-crystal diffractometer data. The compounds with Ln = La, Ce, and Pr crystallize with an orthorhombic U{sub 2}NiC{sub 3} type structure (Pnma, Z = 4). The structure refinement for Ce{sub 2}AuP{sub 3} resulted in a = 774.14(6) pm, b = 421.11(4) pm, c = 1612.3(1) pm, R = 0.019 for 1410 structure factors and 38 variable parameters. For Pr{sub 2}AuP{sub 3} a residual of R = 0.024 was obtained. Nd{sub 2}AuP{sub 3} crystallizes with a monoclinic distortion of this structure: P2{sub 1}/c, Z = 4, a = 416.14(4) pm, b = 768.87(6) pm, c = 1647.1(2) pm, {beta} = 104.06(1) , R = 0.022 for 1361 F values and 56 variables. The near-neighbor coordinations of the two structures are nearly the same. In both structures the gold and phosphorus atoms form two-dimensionally infinite nets, where the gold atoms are tetrahedrally coordinated by phosphorus atoms with Au-P distances varying between 245.8 and 284.2 pm. Two thirds of the phosphorus atoms form pairs with single-bond distances varying between 217.7 and 218.9 pm. Thus, using oxidation numbers the structures can be rationalized with the formulas (Ln{sup +3}){sub 2}[AuP{sub 3}]{sup -6} and (Ln{sup +3}){sub 2}Au{sup +1}(P{sub 2}){sup -4}P{sup -3}. Accordingly, La{sub 2}AuP{sub 3} is a diamagnetic semiconductor. Pr{sub 2}AuP{sub 3} is semi-conducting with an antiferromagnetic ground state, showing metamagnetism with a critical field of B{sub c} = 0.5({+-}0.1) T. In contrast, the cerium compound is a metallic conductor, even though its cell volume indicates that the cerium atoms are essentially trivalent, as is also suggested by the ferro- or ferrimagnetic behavior of the compound. (orig.)

  3. Some Relations of Type 2 Diabetes and Metabolic Syndrome to Colorectal Cancer

    Czech Academy of Sciences Publication Activity Database

    Svačina, Š.; Matoulek, M.; Svobodová, S.; Visokai, V.; Lipská, L.; Plavcová, Marie; Zvárová, Jana

    2003-01-01

    Roč. 29, 4 suppl. (2003), s. 359 ISSN 0338-1684. [International Diabetes Federation Congress /18./. 24.08.2003-29.08.2003, Paris] R&D Projects: GA MZd NB6635; GA MŠk LN00B107 Keywords : diabetes type 2 * metabolic syndrome * colorectal cancer Subject RIV: BB - Applied Statistics, Operational Research

  4. Theoretical aspects of photonic band gap in 1D nano structure of LN: MgLN periodic layer

    International Nuclear Information System (INIS)

    Sisodia, Namita

    2015-01-01

    By using the transfer matrix method, we have analyzed the photonic band gap properties in a periodic layer of LN:MgLN medium. The Width of alternate layers of LN and MgLN is in the range of hundred nanometers. The birefringent and ferroelectric properties of the medium (i.e ordinary, extraordinary refractive indices and electric dipole moment) is given due considerations in the formulation of photonic band gap. Effect of electronic transition dipole moment of the medium on photonic band gap is also taken into account. We find that photonic band gap can be modified by the variation in the ratio of the width of two medium. We explain our findings by obtaining numerical values and the effect on the photonic band gap due to variation in the ratio of alternate medium is shown graphically

  5. Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1-xMgxO layers by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Xia, Y.; Vinter, B.; Chauveau, J.-M.; Brault, J.; Nemoz, M.; Teisseire, M.; Leroux, M.

    2011-01-01

    Nonpolar (1120) Al 0.2 Ga 0.8 N/GaN multiple quantum wells (MQWs) have been grown by molecular beam epitaxy on (1120) Zn 0.74 Mg 0.26 O templates on r-plane sapphire substrates. The quantum wells exhibit well-resolved photoluminescence peaks in the ultra-violet region, and no sign of quantum confined Stark effect is observed in the complete multiple quantum well series. The results agree well with flat band quantum well calculations. Furthermore, we show that the MQW structures are strongly polarized along the [0001] direction. The origin of the polarization is discussed in terms of the strain anisotropy dependence of the exciton optical oscillator strengths.

  6. Structural and elastic properties of defect chalcopyrite HgGa{sub 2}S{sub 4} under high pressure

    Energy Technology Data Exchange (ETDEWEB)

    Gomis, O., E-mail: osgohi@fis.upv.es [Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica, MALTA Consolider Team, Universitat Politècnica de València, 46022 València (Spain); Santamaría-Pérez, D. [Departamento de Física Aplicada-ICMUV, MALTA Consolider Team, Universitat de València, Edificio de Investigación, C/Dr. Moliner 50, Burjassot, 46100 València (Spain); Departamento de Química Física I, Universidad Complutense de Madrid, MALTA Consolider Team, Avenida Complutense s/n, 28040 Madrid (Spain); Vilaplana, R.; Luna, R. [Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica, MALTA Consolider Team, Universitat Politècnica de València, 46022 València (Spain); Sans, J.A.; Manjón, F.J. [Instituto de Diseño para la Fabricación y Producción Automatizada, MALTA Consolider Team, Universitat Politècnica de València, 46022 València (Spain); Errandonea, D. [Departamento de Física Aplicada-ICMUV, MALTA Consolider Team, Universitat de València, Edificio de Investigación, C/Dr. Moliner 50, Burjassot, 46100 València (Spain); and others

    2014-01-15

    Highlights: • Single crystals of HgGa{sub 2}S{sub 4} with defect-chalcopyrite (DC) structure were synthesized. • High-pressure X-ray diffraction in DC-HgGa{sub 2}S{sub 4} was performed. • Equation of state of DC-HgGa{sub 2}S{sub 4} determined (bulk modulus of 48.4 GPa). • Calculated elastic constants of DC-HgGa{sub 2}S{sub 4} reported at different pressures. • DC-HgGa{sub 2}S{sub 4} becomes mechanically unstable above 13.8 GPa. -- Abstract: In this work, we focus on the study of the structural and elastic properties of mercury digallium sulfide (HgGa{sub 2}S{sub 4}) at high pressures. This compound belongs to the family of AB{sub 2}X{sub 4} ordered-vacancy compounds and exhibits a tetragonal defect chalcopyrite structure. X-ray diffraction measurements at room temperature have been performed under compression up to 15.1 GPa in a diamond anvil cell. Our measurements have been complemented and compared with ab initio total energy calculations. The axial compressibility and the equation of state of the low-pressure phase of HgGa{sub 2}S{sub 4} have been experimentally and theoretically determined and compared to other related ordered-vacancy compounds. The pressure dependence of the theoretical cation–anion and vacancy-anion distances and compressibilities in HgGa{sub 2}S{sub 4} are reported and discussed in comparison to other related ordered-vacancy compounds. Finally, the pressure dependence of the theoretical elastic constants and elastic moduli of HgGa{sub 2}S{sub 4} has been studied. Our calculations indicate that the low-pressure phase of HgGa{sub 2}S{sub 4} becomes mechanically unstable above 13.8 GPa.

  7. Studies on the Ln/sub 2/O/sub 3/ (Ln: rare-earth elements)-SrO-V/sub 2/O/sub 3/ system, 1. Phase diagrams at 1400/sup 0/C

    Energy Technology Data Exchange (ETDEWEB)

    Shin-ike, T [Osaka Dental Coll., Hirakata (Japan); Adachi, G; Shiokawa, J

    1980-11-01

    Rare-earth oxides Ln/sub 2/O/sub 3/ (Ln : Nd, Eu or Er), strontium oxide SrO and vanadium oxide V/sub 2/O/sub 3/ were mixed in a given molecular ratio, heated at 1400/sup 0/C in vacuum. The products were examined by an x-ray diffraction method to study the phase relations of the ternary systems. On heating, part of the trivalent vanadium was oxidized to the tetravalent state by atmospheric oxygen. In this experimental condition, the following ternary-phase solid solutions were identified: perovskite type Nd sub(1-x)Sr sub(x)VO sub(3-0.1x) (x > 0.3. cubic, x < 0.3: orthorhombic) and Eu sub(1-x)Sr sub(x)VO sub(3-0.1x) (x > 0.4: cubic, x < 0.4: orthorhombic), K/sub 2/NiF/sub 4/ type SrO.Nd sub(1-x)Sr sub(x)VO sub(3-0.1x) (x > 0.3) and SrO.Eu sub(1-x)Sr sub(x)VO sub(3-0.1x) (x > 0.4) and Eu/sub 3/Ti/sub 2/O/sub 7/ type SrO.2Nd sub(1-x)Sr sub(x)VO sub(3-0.1x) (x > 0.3) and SrO.2Eu sub(1-x)Sr sub(x)VO sub(3-0.1x) (x > 0.4). For the Er/sub 2/O/sub 3/-SrO-V/sub 2/O/sub 3/ system, only a mixture of Er/sub 2/O/sub 3/, SrVO sub(2.9), ErVO/sub 3/, SrO and V/sub 2/O/sub 3/ was obtained.

  8. Ga+ focused-ion-beam implantation-induced masking for H2 etching of ZnO films

    International Nuclear Information System (INIS)

    Fang, Hsin-Chiao; Huang, Jun-Han; Chu, Wen-Huei; Liu, Chuan-Pu

    2010-01-01

    Gallium implantation of ZnO by a focused-ion beam is used to create a mask for ZnO dry etching with hydrogen. Effects of Ga + fluence on the etch stop properties and the associated mechanisms are investigated. The fluence of 2.8 x 10 16 cm -2 is determined to be optimum to render the best mask quality. While lower fluences would cause less etching selectivity, higher fluences would cause erosion of the surface and particles to be precipitated on the surface after H 2 treatment at high temperature. In contrast to the commonly adopted gallium oxide formation on Si, transmission electron microscopy analysis reveals that, for the fluences ≤ 2.8 x 10 16 cm -2 , Ga + ions are incorporated as dopants into ZnO without any second phases or precipitates, indicating the Ga-doped ZnO layer behaves as a mask for H 2 etching due to the higher electronegativity of Ga + towards oxygen. However, for the fluences ≥ 4.6 x 10 16 cm -2 , the surface particles are responsible for the etch stop and are identified as ZnGa 2 O 4 . We finally demonstrate a complicated pattern of 'NCKU' on ZnO by using this technique. The study not only helps clarify the related mechanisms, but also suggests a feasible extension of the etch stop process that can be applied to more functional material.

  9. Magnetic and magnetoelastic properties of M-substituted cobalt ferrites (M=Mn, Cr, Ga, Ge)

    Energy Technology Data Exchange (ETDEWEB)

    Song, Sang-Hoon [Iowa State Univ., Ames, IA (United States)

    2007-12-15

    Magnetic and magnetoelastic properties of a series of M-substituted cobalt ferrites, CoMxFe2-xO4 (M=Mn, Cr, Ga; x=0.0 to 0.8) and Ge-substituted cobalt ferrites Co1+xGexFe2-2xO4 (x=0.0 to 0.6) have been investigated.

  10. Modeling 4f–4f intensity parameters as a function of structural distortions in Ln(2,2′-bipyridine-1,1′-dioxide){sub 4}(ClO{sub 4}){sub 3} complexes (Ln=Pr{sup 3+}, Nd{sup 3+})

    Energy Technology Data Exchange (ETDEWEB)

    Carneiro, A.N. [Departamento de Química Fundamental, Universidade Federal de Pernambuco-CCEN, Cidade Universitária, Recife-PE 50670-901 (Brazil); Huskowska, E.; Gawryszewska, P. [Faculty of Chemistry, Wroclaw University, 14 F. Joliot-Curie Street, Wroclaw (Poland); Legendziewicz, J., E-mail: janina.legendziewicz@chem.uni.wroc.pl [Faculty of Chemistry, Wroclaw University, 14 F. Joliot-Curie Street, Wroclaw (Poland); Malta, O.L. [Departamento de Química Fundamental, Universidade Federal de Pernambuco-CCEN, Cidade Universitária, Recife-PE 50670-901 (Brazil)

    2016-01-15

    This work reports on the influence of structural distortions on 4f–4f intensity parameters. These distortions in the first coordination sphere were applied to two complexes with similar structures, Ln(bpyO{sub 2}){sub 4}(ClO{sub 4}){sub 3} (Ln=Pr{sup 3+}, Nd{sup 3+} ions and bpyO{sub 2}=2,2′-bipyridine-1,1′-dioxide). The 4f–4f intensity theory and the PM3/Sparkle model were used. It is concluded that larger distortions are predicted in the case of the Pr complex, and that this point might contribute to the rationalization of the much higher values of the Ω{sub λ} intensity parameters in the Pr complex than in the Nd one. - Highlights: • The influence of structural distortions on 4f–4f intensity parameters was demonstrated for Nd and Pr complexes with 2,2′-bipyridine-1,1′-dioxide.

  11. Mercury(II) selective sensors based on AlGaN/GaN transistors.

    Science.gov (United States)

    Asadnia, Mohsen; Myers, Matthew; Akhavan, N D; O'Donnell, Kane; Umana-Membreno, Gilberto A; Mishra, U K; Nener, Brett; Baker, Murray; Parish, Giacinta

    2016-11-02

    This work presents the first polymer approach to detect metal ions using AlGaN/GaN transistor-based sensor. The sensor utilised an AlGaN/GaN high electron mobility transistor-type structure by functionalising the gate area with a polyvinyl chloride (PVC) based ion selective membrane. Sensors based on this technology are portable, robust and typically highly sensitive to the target analyte; in this case Hg 2+ . This sensor showed a rapid and stable response when it was introduced to solutions of varying Hg 2+ concentrations. At pH 2.8 in a 10 -2  M KNO 3 ion buffer, a detection limit below 10 -8  M and a linear response range between 10 -8  M-10 -4  M were achieved. This detection limit is an order of magnitude lower than the reported detection limit of 10 -7  M for thioglycolic acid monolayer functionalised AlGaN/GaN HEMT devices. Detection limits of approximately 10 -7  M and 10 -6  M in 10 -2  M Cd(NO 3 ) 2 and 10 -2  M Pb(NO 3 ) 2 ion buffers were also achieved, respectively. Furthermore, we show that the apparent gate response was near-Nernstian under various conditions. X-ray photoelectron spectroscopy (XPS) experiments confirmed that the sensing membrane is reversible after being exposed to Hg 2+ solution and rinsed with deionised water. The success of this study precedes the development of this technology in selectively sensing multiple ions in water with use of the appropriate polymer based membranes on arrays of devices. Crown Copyright © 2016. Published by Elsevier B.V. All rights reserved.

  12. Characteristic charge transport in oxygen-deficiency-controlled LnFeAsO1-y (Ln = La and Nd)

    International Nuclear Information System (INIS)

    Ishida, Shigeyuki; Nakajima, Masamichi; Tomioka, Yasuhide; Ito, Toshimitsu; Miyazawa, Kiichi; Kito, Hijiri; Lee, Chul-Ho; Ishikado, Motoyuki; Shamoto, Shin-ichi; Iyo, Akira; Eisaki, Hiroshi; Kojima, Kenji M.; Uchida, Shin-ichi

    2010-01-01

    We have investigated the transport properties of LnFeAsO 1-y (Ln = La, Nd) over a wide range of doping. When we compare the exponent n of resistivity ρ(T)∼T n , a marked difference is found between La and Nd system. In the La system with lower T C ,ρ(T) is always dominated by a T 2 term at low temperatures, showing relatively large magnetoresistance. On the other hand, in the Nd system with higher T C ,ρ(T) is linear on T with a small magnetoresistance. These results indicate that the carriers are subject to stronger scattering in NdFeAsO 1-y , which might be linked to the higher T C .

  13. Two-dimensional electron and hole gases in GaN/AlGaN heterostructures; Zweidimensionale Elektronen- und Loechergase in GaN/AlGaN-Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Link, A.

    2004-12-01

    The aim of this PhD thesis is to investigate the electronic properties of electron and hole gases in GaN/AlGaN heterostructures. Particularly, a deeper and broadened understanding of scattering mechanisms and transport properties is in the focus of this work. The main experimental techniques used for this purpose are the study of Shubnikov-de Haas (SdH) effect and Hall measurements at low temperatures. By means of these magnetotransport measurements, a series of GaN/AlGaN heterostructures with different Al content of the AlGaN barrier were investigated. Since the sheet carrier density of the 2DEG in these semiconductor structures is strongly dependent on the Al content (n{sub s}=2 x 10{sup 12}-10{sup 13} cm{sup -2}), the variation of transport parameters was determined as a function of sheet carrier concentration. First, from the temperature dependence of the SdH oscillations the effective transport mass was calculated. A Hall bar structure with an additional gate contact was used as an alternative to tune the carrier density of a 2DEG system independent of varying structural parametes such as Al content. Thus, the scattering mechanisms were investigated in the carrier density region between 3 x 10{sup 12} and 9.5 x 10{sup 12} cm{sup -2}. The transport properties of subband electrons were studied for a 2DEG system with two occupied subbands. (orig.)

  14. Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

    Science.gov (United States)

    Leedy, Kevin D.; Chabak, Kelson D.; Vasilyev, Vladimir; Look, David C.; Boeckl, John J.; Brown, Jeff L.; Tetlak, Stephen E.; Green, Andrew J.; Moser, Neil A.; Crespo, Antonio; Thomson, Darren B.; Fitch, Robert C.; McCandless, Jonathan P.; Jessen, Gregg H.

    2017-07-01

    Si-doped Ga2O3 thin films were fabricated by pulsed laser deposition on semi-insulating (010) β-Ga2O3 and (0001) Al2O3 substrates. Films deposited on β-Ga2O3 showed single crystal, homoepitaxial growth as determined by high resolution transmission electron microscopy and x-ray diffraction. Corresponding films deposited on Al2O3 were mostly single phase, polycrystalline β-Ga2O3 with a preferred (20 1 ¯ ) orientation. An average conductivity of 732 S cm-1 with a mobility of 26.5 cm2 V-1 s-1 and a carrier concentration of 1.74 × 1020 cm-3 was achieved for films deposited at 550 °C on β-Ga2O3 substrates as determined by Hall-Effect measurements. Two orders of magnitude improvement in conductivity were measured using native substrates versus Al2O3. A high activation efficiency was obtained in the as-deposited condition. The high carrier concentration Ga2O3 thin films achieved by pulsed laser deposition enable application as a low resistance ohmic contact layer in β-Ga2O3 devices.

  15. Ln{sup 3+}:KLu(WO{sub 4}){sub 2}/KLu(WO{sub 4}){sub 2} epitaxial layers: Crystal growth and physical characterisation

    Energy Technology Data Exchange (ETDEWEB)

    Silvestre, O.; Pujol, M.C.; Sole, R.; Bolanos, W.; Carvajal, J.J.; Massons, J.; Aguilo, M. [Fisica i Cristal.lografia de Materials (FiCMA), Universitat Rovira i Virgili, Campus Sescelades c/Marcel.li Domingo, s/n E-43007 Tarragona (Spain); Diaz, F. [Fisica i Cristal.lografia de Materials (FiCMA), Universitat Rovira i Virgili, Campus Sescelades c/Marcel.li Domingo, s/n E-43007 Tarragona (Spain)], E-mail: f.diaz@urv.cat

    2008-01-15

    Monoclinic epitaxial layers of single doped KLu{sub 1-x}Ln{sub x}(WO{sub 4}){sub 2} (Ln{sup 3+} = Yb{sup 3+} and Tm{sup 3+}) have been grown on optically passive KLuW substrates by liquid phase epitaxy (LPE) technique using K{sub 2}W{sub 2}O{sub 7} as solvent. The ytterbium content in the layer is in the range of 0.05 < x < 0.75 atomic substitution and the studied thulium concentrations are 0.05 < x < 0.10. The grown epitaxies are free of macroscopic defects and only in highly ytterbium-doped epilayers do some cracks or inclusions appear. The refractive indices of the epilayers were determined. The absorption and emission cross sections of ytterbium and thulium in KLuW are characterised and laser generation results are presented and discussed.

  16. Synthesis and magnetism of μ-oxamido-bridged Cu2IILnIII - type heterotrinuclear complexes (Ln = Ce, Nd, Sm, Eu, Gd, Tb, Dy, Er)

    International Nuclear Information System (INIS)

    Li, Y.T.; Yan, C.W.

    2001-01-01

    Eight new Cu 2 II Ln III - type (Ln = Ce, Nd, Sm, Eu, Gd, Tb, Dy, Er) heterotrinuclear complexes bridged by N,N'-bis (2-aminopropyl)oxamidocopper(II) [Cu(oxdn)], namely Cu 2 (oxdn)Ln(NO 3 ) 3 , have been synthesized and characterized by elemental analyses, molar conductivity measurements and spectroscopic (IR, UV, ESR) studies. Magnetic susceptibility measurements (4.2 ∼300 K) and studies of Cu 2 (oxdn)Gd(NO 3 ) 3 complex have revealed that the central gadolinium(III) and terminal copper(II) ions are ferromagnetically coupled with the exchange integral J (Cu-Gd) = +2.98 cm -1 , while an antiferromagnetic coupling is detected between the terminal copper(II) metal ions with the exchange integral J' (Cu-Gd) = -0.75 cm -1 , on the basis of the spin Hamiltonian operator [H -2J(S Cu1 -S Gd +S Cu2 +S Gd )-2J'(S Cu1 S Cu2 )]. (author)

  17. A GA based penalty function technique for solving constrained redundancy allocation problem of series system with interval valued reliability of components

    Science.gov (United States)

    Gupta, R. K.; Bhunia, A. K.; Roy, D.

    2009-10-01

    In this paper, we have considered the problem of constrained redundancy allocation of series system with interval valued reliability of components. For maximizing the overall system reliability under limited resource constraints, the problem is formulated as an unconstrained integer programming problem with interval coefficients by penalty function technique and solved by an advanced GA for integer variables with interval fitness function, tournament selection, uniform crossover, uniform mutation and elitism. As a special case, considering the lower and upper bounds of the interval valued reliabilities of the components to be the same, the corresponding problem has been solved. The model has been illustrated with some numerical examples and the results of the series redundancy allocation problem with fixed value of reliability of the components have been compared with the existing results available in the literature. Finally, sensitivity analyses have been shown graphically to study the stability of our developed GA with respect to the different GA parameters.

  18. Clinical evaluation of 67Ga gut accumulation in 67Ga scintigraphy

    International Nuclear Information System (INIS)

    Kobayashi, Hidetoshi; Ohno, Akiko; Watanabe, Youichi; Ishigaki, Takeo.

    1994-01-01

    Accumulation of 67 Ga in gut was evaluated in 67 Ga scintigraphy retrospectively in 30 patients (32 examinations). TIBC and UIBC were examined in all patients on the day when their scintigraphies were performed. Blood transfusion or Fe administration 2 months before 67 Ga scintigraphies were not carried out in any patient. Fifty percents (6/12) of male, and 40% (8/20) of female patients showed 67 Ga accumulation in gut. There was significant correlation between 67 Ga accumulation in gut and low ion-saturation ratio for transferrin. Excretion of 67 Ga bound with transferrin from liver was thought to be an important factor of 67 ga accumulation in gut. (author)

  19. Structural and electrochemical properties of La{sub 0.8}Sr{sub 0.2}Ga{sub 1-x}Fe{sub x}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Mori, Kazuhiro [Research Reactor Institute, Kyoto University, Kumatori-cho, Sennan-gun, Osaka 590-0494 (Japan)], E-mail: kmori@rri.kyoto-u.ac.jp; Onodera, Yohei [Research Reactor Institute, Kyoto University, Kumatori-cho, Sennan-gun, Osaka 590-0494 (Japan); Kiyanagi, Ryoji; Richardson, James W. [Intense Pulsed Neutron Source Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Itoh, Keiji; Sugiyama, Masaaki [Research Reactor Institute, Kyoto University, Kumatori-cho, Sennan-gun, Osaka 590-0494 (Japan); Kamiyama, Takashi [Institute of Materials Structure Science, High Energy Accelerator Research Organization, Tsukuba, Ibaraki 305-0801 (Japan); Fukunaga, Toshiharu [Research Reactor Institute, Kyoto University, Kumatori-cho, Sennan-gun, Osaka 590-0494 (Japan)

    2009-02-21

    Mixed ionic-electronic conductor of Fe doped lanthanum gallate, La{sub 0.8}Sr{sub 0.2}Ga{sub 1-x}Fe{sub x}O{sub 3}, has been studied by the dc four-probe method and the neutron powder diffraction. In the electrical conductivity measurement at RT, insulator-metal transition-like phenomenon was observed at around x{approx}0.35; this suggests an existence of the percolation limit for the electronic conductivity. Simultaneously, a bond length between O atoms, l{sub O-O}, in a MO{sub 6} octahedron (M=Ga{sub 1-x}Fe{sub x}) drastically expands over x{approx}0.4, according to the result of crystal structure refinement based on the hexagonal phase. Such a drastic expansion in the l{sub O-O} would induce the decrease in the oxygen ionic conductivity.

  20. Reconsideration of Orth I and Orth II Phases in Ln-System Superconductors

    Science.gov (United States)

    Liu, Yue-Wei; Wang, Lu; Zhang, Han

    2006-02-01

    A block model is used to calculate the combinative energy in LnBa2Cu3O7-x (Ln=Y, Er, Nd) systems, and the energy has no difference for orth-I and orth-II in the plateau range. Namely, no matter what phase it is, when the oxygen deficiency is in the range of δ~0.35-0.55, the plateau appears in the energy -δ curves, and the combinative energy has close correlation with the Tc value. The result in the present work gives some hints to reconsider the role of the order of oxygen defects or its effect on superconductivity in LnBa2Cu3O7-x. The existence of the orth-II seems not to be the reason for the plateau in the Tc curve. This is an important problem for LnBa2Cu3O7-x and some suggestion is given in the discussion.

  1. Biphasic {sup 68}Ga-PSMA-HBED-CC-PET/CT in patients with recurrent and high-risk prostate carcinoma

    Energy Technology Data Exchange (ETDEWEB)

    Sahlmann, Carsten-Oliver; Meller, Birgit; Bouter, Caroline; Meller, Johannes [University Medical Center Goettingen, Department of Nuclear Medicine, Goettingen (Germany); Ritter, Christian Oliver; Lotz, Joachim [University Medical Center Goettingen, Department of Diagnostic and Interventional Radiology, Goettingen (Germany); Stroebel, Philipp [University Medical Center Goettingen, Department of Pathology, Goettingen (Germany); Trojan, Lutz; Hijazi, Sameh [University Medical Center Goettingen, Department of Urology, Goettingen (Germany)

    2016-05-15

    Binding of {sup 68}Ga-PSMA-HBED-CC ({sup 68}Ga-PSMA) at prostate cancer (PC) cells increases over time. A biphasic protocol may help separating benign from tumor lesions. The aim of this study was the retrospective evaluation of a diagnostic incremental value of a dual-time point (biphasic) {sup 68}Ga-PSMA-PET/CT in patients with prostate cancer. Retrospective analysis of 35 consecutive patients (49-78 years, median 71) with newly diagnosed PC (12/35) or recurrence of PC (23/35). PET/CT (Gemini TF16, Philips) was acquired 1 h and 3 h p. i. of 140-392 MBq (300 MBq median) {sup 68}Ga-PSMA, followed by a diagnostic contrast CT. PET findings were correlated with histology or unequivocal CT findings. Semiquantitative PET data (SUVmax, SUV mean) were acquired and target-to-background-ratios (T/B-ratio) were calculated for benign and malign lesions for both time points. Size of lymph nodes (LN) on diagnostic CT was recorded. Statistical analysis was performed for assessment of significant changes of semiquantitative PET-parameters over time and for correlation of size and uptake of lymph nodes. One hundred and four lesions were evaluated. Sixty lesions were referenced by histology or unequivocal CT findings, including eight (13.3 %) histopathologically benign lymph nodes, 12 (20 %) histopathologically lymph node metastases, 12 (20 %) primary tumors, three (5 %) local recurrences, and 25 (41.7 %) bone metastases. Forty-four lesions were axillary LN with normal CT-appearance. Benign lesions had significantly lower SUVmax and T/B-ratios compared with malignant findings. Malign lesions showed a significant increase of both parameters over time compared to benign findings. There was no correlation between LN size and SUVmax. The sensitivity, specificity, the positive predictive value and negative predictive value of PET/CT regarding pelvic LN was 94 %, 99 %, 89 %, and 99.5 %, respectively. In contrast to benign tissues, the uptake of proven tumor lesions increases on {sup 68

  2. First-principles study of the electronic transport properties in (GaAs)n (n=2–4) nanocluster-based molecular junctions

    International Nuclear Information System (INIS)

    Zhang, Daoli; Xu, Yuanlan; Zhang, Jianbing; Miao, Xiangshui

    2012-01-01

    In this program the geometric structures and electronic transport properties of a series of (GaAs) n (n=2,3,4) clusters are comparatively studied using non-equilibrium Green's function (NEGF) combined with density functional theory (DFT). It is find that all the GaAs nanocluster-based molecular junctions show metallic behavior at low biases ([−2 V,2 V]) while negative differential resistance (NDR) appears at a certain high bias range. Our calculation shows that the current of (GaAs) 3 nanocluster-based molecular junction is almost the smallest at any bias. The mechanisms of the current–voltage characteristics of all the three molecular junctions are proposed.

  3. Magnetic properties of rare earth oxides with perovskite structure

    International Nuclear Information System (INIS)

    Hinatsu, Yukio

    2008-01-01

    A perovskite composite oxide is represented by the general formula of ABO 3 . Cations at the B site characterize magnetic properties of the oxide. Many studies have been accumulated for transition metal elements at the B sites. In this report the studies of rare earth elements at the B sites are reviewed. In rare elements, tetravalent ions such as Ce 4+ , Pr 4+ and Tb 4+ can occupy the B sites with Ba and Sr ions at the A sites. Both the SrTbO 3 and BaTbO 3 have an orthorhombic structure and show the antiferromagnetic transition at about 33 K, which is originated from terbium ions coupled antiferromagnetically with the six neighboring terbium ions. A tetravalent praseodymium perovskite SrPrO 3 shows no existence of the magnetic ordering down to 2.0 K. This is in contrast to the result of isomorphous BaPrO 3 , which shows an antiferromagnetic transition at 11.5 K. A double perovskite structure is represented by the formula A 2 LnMO 6 (A=Ba, Sr, Ca; M=Ru, Ir). In a double perovskite compound Ba 2 PrRuO 6 , the Pr 3+ and Ru 5+ ions are arranged with regularity over the six-coordinate B sites. This compound transforms to an antiferromagnetic state below 117 K. Antiferromagnetic transition temperatures T N for isomorphous Sr and Ca show a clear tendency, T N (A=Ba)>T N (Sr)>T N (Ca), in the compounds with the same rare earth elements (Ln). The 6H-perovskite structure Ba 3 LnRu 2 O 9 consists of linkages between LnO 6 octahedra and Ru 2 O 9 dimers made from face-shared RuO 6 octahedra. The 6H-perovskite structure Ba 3 MRu 2 O 9 (M=Sc, Y, La, Nd-Gd, Dy-Lu) have the valence state of Ba 3 M 3+ Ru 2 4.5+ O 9 . The magnetic susceptibilities show a broad maximum at 135-370 K. This magnetic behavior is ascribed to the antiferromagnetic coupling between two Ru ions in a Ru 2 O 9 dimer and to the magnetic interaction between the Ru 2 O 9 dimers. (author)

  4. Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier

    International Nuclear Information System (INIS)

    Sirkeli, Vadim P; Al-Daffaie, Shihab; Oprea, Ion; Küppers, Franko; Hartnagel, Hans L; Yilmazoglu, Oktay; Ong, Duu Sheng

    2017-01-01

    Blue InGaN/GaN light-emitting diodes with undoped, heavily Si-doped, Si delta-doped, heavily Mg-doped, Mg delta-doped, and Mg–Si pin-doped GaN barrier are investigated numerically. The simulation results demonstrate that the Mg–Si pin-doping in the GaN barrier effectively reduces the polarization-induced electric field between the InGaN well and the GaN barrier in the multiple quantum well, suppresses the quantum-confined Stark effect, and enhances the hole injection and electron confinement in the active region. For this light-emitting diode (LED) device structure, we found that the turn-on voltage is 2.8 V, peak light emission is at 415.3 nm, and internal quantum efficiency is 85.9% at 100 A cm −2 . It is established that the LED device with Mg–Si pin-doping in the GaN barrier has significantly improved efficiency and optical output power performance, and lower efficiency droop up to 400 A cm −2 compared with LED device structures with undoped or Si(Mg)-doped GaN barrier. (paper)

  5. High performance Sm{sub 0.5}Sr{sub 0.5}CoO{sub 3}-La{sub 0.8}Sr{sub 0.2}Ga{sub 0.8}Mg{sub 0.15}Co{sub 0.05}O{sub 3} composite cathodes

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Shizhong; Zou, Yuman [College of Chemistry and Chemical Engineering, Department of Chemistry, Xiamen University, Xiamen 361005, Fujian (China)

    2006-06-15

    High performance Sm{sub 0.5}Sr{sub 0.5}CoO{sub 3}(SSC)-La{sub 0.8}Sr{sub 0.2}Ga{sub 0.8}Mg{sub 0.15}Co{sub 0.05}O{sub 3} (LSGMC5) composite cathodes for intermediate temperature solid oxide fuel cells (ITSOFC) were prepared and characterized. The SSC powders were synthesized using the glycine-nitrate method and La{sub 0.8}Sr{sub 0.2}Ga{sub 0.8}Mg{sub 0.15}Co{sub 0.05}O{sub 3}(LSGMC5) powders were synthesized using the citrate method. The calcining temperature for the SSC and LSGMC5 powders had strong effect on the microstructure of the composite electrode and electrode/electrolyte interface, which affected the performance of the SSC-LSGMC5 electrode strongly. The electrode based on SSC calcined at 1223K and LSGMC5 calcined at 1273K exhibited the highest performance among the electrodes studied. The electrode resistance was about 0.07{omega}cm{sup 2}, and the overpotential under 1Acm{sup -2} current density was as low as 0.077V at 973K in oxygen, which could be an ideal cathode for ITSOFC based on lanthanum gallate electrolytes. (author)

  6. Fabrication of a transparent ultraviolet detector by using n-type Ga2O3 and p-type Ga-doped SnO2 core-shell nanowires.

    Science.gov (United States)

    Hsu, Cheng-Liang; Lu, Ying-Ching

    2012-09-21

    This study investigates the feasibility of synthesizing high-density transparent Ga(2)O(3)/SnO(2):Ga core-shell nanowires on a sapphire substrate at 1000 °C by VLS. The doping Ga concentrations are 0.46, 1.07, 2.30 and 17.53 atomic%. The XRD spectrum and HR-TEM reveal Ga(2)O(3) and SnO(2) as having monoclinic and tetragonal rutile structures, respectively. Experimental results indicate that the XRD peak shift of SnO(2) to a larger angle increases with the increasing amount of Ga doping. According to the CL spectrum, SnO(2) and Ga(2)O(3) peak at approximately 528-568 nm and 422-424 nm, respectively. The maximum quantum efficiency of Ga(2)O(3)/SnO(2):Ga core-shell nanowires is around 0.362%. The UV light on-off current contrast ratio of Ga(2)O(3)/SnO(2):Ga core-shell nanowires is around 1066.7 at a bias of 5 V. Moreover, the dynamic response of Ga(2)O(3)/SnO(2):Ga core-shell nanowires has an on-off current contrast ratio of around 16. Furthermore, the Ga(2)O(3) region functions similar to a capacitor and continues to accumulate SnO(2):Ga excited electrons under UV light exposure.

  7. Carrier quenching in InGaP/GaAs double heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Wells, Nathan P., E-mail: nathan.p.wells@aero.org; Driskell, Travis U.; Hudson, Andrew I.; LaLumondiere, Stephen D.; Lotshaw, William T. [The Aerospace Corporation, Physical Sciences Laboratories, P.O. Box 92957, Los Angeles, California 90009 (United States); Forbes, David V.; Hubbard, Seth M. [NanoPower Research Labs, Rochester Institute of Technology, 156 Lomb Memorial Dr., Rochester, New York 14623 (United States)

    2015-08-14

    Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm{sup 2} in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes to reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.

  8. Surprising luminescent properties of the polyphosphates Ln(PO3)3:Eu (Ln = Y, Gd, Lu).

    Science.gov (United States)

    Höppe, Henning A; Kazmierczak, Karolina; Kacprzak, Sylwia; Schellenberg, Inga; Pöttgen, Rainer

    2011-10-21

    The optical emission properties of the lanthanoid catena-polyphosphates Ln(PO(3))(3) (Ln = Y, Gd, Lu) doped with europium were investigated. Incommensurately modulated β-Y(PO(3))(3):Eu (super space group Cc (0|0.364|0)0) and Gd(PO(3))(3):Eu (space group I2/a) show the usual emission characteristics of Eu(3+), while in Lu(PO(3))(3):Eu (space group Cc) the europium is unprecedentedly partially reduced to the divalent state, as proven by both a broad emission band at 406 nm excited at 279 nm and an EPR spectroscopic investigation. (151)Eu-Mössbauer spectroscopy showed that only a very small part of the europium is reduced in Lu(PO(3))(3):Eu. An explanation for this unusual behaviour is given. This journal is © The Royal Society of Chemistry 2011

  9. Polarity control of GaN epitaxial films grown on LiGaO2(001) substrates and its mechanism.

    Science.gov (United States)

    Zheng, Yulin; Wang, Wenliang; Li, Xiaochan; Li, Yuan; Huang, Liegen; Li, Guoqiang

    2017-08-16

    The polarity of GaN epitaxial films grown on LiGaO 2 (001) substrates by pulsed laser deposition has been well controlled. It is experimentally proved that the GaN epitaxial films grown on nitrided LiGaO 2 (001) substrates reveal Ga-polarity, while the GaN epitaxial films grown on non-nitrided LiGaO 2 (001) substrates show N-polarity. The growth mechanisms for these two cases are systematically studied by first-principles calculations based on density functional theory. Theoretical calculation presents that the adsorption of a Ga atom preferentially occurs at the center of three N atoms stacked on the nitrided LiGaO 2 (001) substrates, which leads to the formation of Ga-polarity GaN. Whereas the adsorption of a Ga atom preferentially deposits at the top of a N atom stacked on the non-nitrided LiGaO 2 (001) substrates, which results in the formation of N-polarity GaN. This work of controlling the polarity of GaN epitaxial films is of paramount importance for the fabrication of group-III nitride devices for various applications.

  10. Diurnal dynamics of photosynthetic parameters of Norway spruce trees cultivated under ambient and elevated CO2: the reasons of midday depression in CO2 assimilation

    Czech Academy of Sciences Publication Activity Database

    Špunda, V.; Kalina, J.; Urban, Otmar; Luis, V.C.; Sibisse, I.; Puértolas, J.; Šprtová, Miroslava; Marek, Michal V.

    2005-01-01

    Roč. 168, č. 5 (2005), s. 1371-1381 ISSN 0168-9452 R&D Projects: GA MŠk(CZ) LN00A141; GA MŠk(CZ) 1P04OCE21.001; GA AV ČR(CZ) IBS6087005; GA MŽP SM/640/18/03 Grant - others:EU(CZ) HPRI-CT-2002-00197 Institutional research plan: CEZ:AV0Z60870520 Keywords : daily course of photosynthesis * elevated CO2 * dynamics of acclimation depression of photosynthesis Subject RIV: ED - Physiology Impact factor: 1.605, year: 2005

  11. Membrane ion transport in erythrocytes of salt hypertensive Dahl rats and their F2 hybrids: the importance of cholesterol

    Czech Academy of Sciences Publication Activity Database

    Vokurková, Martina; Dobešová, Zdenka; Kuneš, Jaroslav; Zicha, Josef

    2003-01-01

    Roč. 26, č. 5 (2003), s. 397-404 ISSN 0916-9636 R&D Projects: GA ČR GA305/00/1638; GA MŠk LN00A069 Institutional research plan: CEZ:AV0Z5011922 Keywords : ion transport * salt hypertension * plasma lipids Subject RIV: FA - Cardiovascular Diseases incl. Cardiotharic Surgery Impact factor: 2.013, year: 2003

  12. Structure and Hydrogen Bonding of 2-aminopyridine·(H2O)n (n=1,2) Studied by Infrared Ion Depletion Spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Wu, R.; Nachtigall, Petr; Brutschy, B.

    2004-01-01

    Roč. 6, č. 3 (2004), s. 515-521 ISSN 1463-9076 R&D Projects: GA MŠk LN00A032 Institutional research plan: CEZ:AV0Z4040901 Keywords : hydrogen bonding * electronic and vibrational spectra * spectroscopy Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.076, year: 2004

  13. InxGa1− xN fibres grown on Au/SiO2 by chemical vapour deposition

    Indian Academy of Sciences (India)

    A morphological comparison between the InGa1−N and GaN films is shown as a function of the indium incorporation. The highest crystalline InGa1−N films structure was obtained with an indium composition of = 0.20. Also, the preferential growth on the (002) plane over In0.2Ga0.8N was observed by means of ...

  14. Vliv zvýšené hladiny dopaminu na chování potkana v časné dospělosti po neonatální aplikaci N-acetylaspartylglutamátu

    Czech Academy of Sciences Publication Activity Database

    Bubeníková, V.; Tejkalová, H.; Klaschka, Jan; Šťastný, F.

    2003-01-01

    Roč. 7, Suppl. 3 (2003), s. 46-49 ISSN 1211-7579 R&D Projects: GA MŠk LN00B122 Keywords : N-acetylaspartylglutamate * schizophrenia * animal model * behavior * GBR 12909 Subject RIV: BA - General Mathematics

  15. Novel yellow-emitting Sr8MgLn(PO4)7:Eu2+ (Ln=Y, La) phosphors for applications in white LEDs with excellent color rendering index.

    Science.gov (United States)

    Huang, Chien-Hao; Chen, Teng-Ming

    2011-06-20

    Eu(2+)-activated Sr(8)MgY(PO(4))(7) and Sr(8)MgLa(PO(4))(7) yellow-emitting phosphors were successfully synthesized by solid-state reactions for applications in excellent color rendering index white light-emitting diodes (LEDs). The excitation and reflectance spectra of these phosphors show broad band excitation and absorption in the 250-450 nm near-ultraviolet region, which is ascribed to the 4f(7) → 4f(6)5d(1) transitions of Eu(2+). Therefore, these phosphors meet the application requirements for near-UV LED chips. Upon excitation at 400 nm, the Sr(8)MgY(PO(4))(7):Eu(2+) and Sr(8)MgLa(PO(4))(7):Eu(2+) phosphors exhibit strong yellow emissions centered at 518, 610, and 611 nm with better thermal stability than (Ba,Sr)(2)SiO(4) (570 nm) commodity phosphors. The composition-optimized concentrations of Eu(2+) in Sr(8)MgLa(PO(4))(7):Eu(2+) and Sr(8)MgY(PO(4))(7):Eu(2+) phosphors were determined to be 0.01 and 0.03 mol, respectively. A warm white-light near-UV LED was fabricated using a near-UV 400 nm chip pumped by a phosphor blend of blue-emitting BaMgAl(10)O(17):Eu(2+) and yellow-emitting Sr(8)MgY(PO(4))(7):0.01Eu(2+) or Sr(8)MgLa(PO(4))(7):0.03Eu(2+), driven by a 350 mA current. The Sr(8)MgY(PO(4))(7):0.01Eu(2+) and Sr(8)MgLa(PO(4))(7):0.03Eu(2+) containing LEDs produced a white light with Commission International de I'Eclairage (CIE) chromaticity coordinates of (0.348, 0.357) and (0.365, 0.328), warm correlated color temperatures of 4705 and 4100 K, and excellent color rendering indices of 95.375 and 91.75, respectively. © 2011 American Chemical Society

  16. Raman enhancement by graphene-Ga2O3 2D bilayer film.

    Science.gov (United States)

    Zhu, Yun; Yu, Qing-Kai; Ding, Gu-Qiao; Xu, Xu-Guang; Wu, Tian-Ru; Gong, Qian; Yuan, Ning-Yi; Ding, Jian-Ning; Wang, Shu-Min; Xie, Xiao-Ming; Jiang, Mian-Heng

    2014-01-28

    2D β-Ga2O3 flakes on a continuous 2D graphene film were prepared by a one-step chemical vapor deposition on liquid gallium surface. The composite was characterized by optical microscopy, scanning electron microscopy, Raman spectroscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy (XPS). The experimental results indicate that Ga2O3 flakes grew on the surface of graphene film during the cooling process. In particular, tenfold enhancement of graphene Raman scattering signal was detected on Ga2O3 flakes, and XPS indicates the C-O bonding between graphene and Ga2O3. The mechanism of Raman enhancement was discussed. The 2D Ga2O3-2D graphene structure may possess potential applications.

  17. Bone mineral density and accelerometer-determined habitual physical activity and inactivity in postmenopausal women [Kostní denzita a habituální pohybová aktivita a inaktivita u postmenopauzálních žen

    Directory of Open Access Journals (Sweden)

    Ondřej Kapuš

    2011-09-01

    Full Text Available BACKGROUND: In postmenopausal women, physical activity appears to be important in preventing loss of bone mineral density (BMD and osteoporosis and thus contributes to the reduction of fracture risk. OBJECTIVE: This cross-sectional study aimed to investigate the differences in habitual physical activity, physical inactivity and meeting physical activity recommendations between women with normal femoral BMD and women with osteopenia. METHODS: Out of the ninety-two postmenopausal women analyzed in this study, 72.8% women had normal femoral BMD and 27.2% women were osteopenic. Their BMD and body composition were measured using Dual Energy X-ray Absorptiometry. The region of interest was the total proximal femur. Seven days of physical activity were objectively assessed by using the ActiGraph GT1M accelerometer. Daily activity and inactivity logs were used for the participants to self-record their times (minutes when the accelerometer was worn and follow activity and inactivity patterns. RESULTS: Women with normal BMD spent significantly more hours/day being active than women with osteopenia. On theother hand, women with osteopenia perform significantly more household-related PA. According to the physical inactivity analysis, women with osteopenia spent significantly more minutes/week while doing different mental activities (reading, doing crossword puzzles, etc. in a sitting position than women with normal BMD. CONCLUSIONS: In conclusion, the results of this study show the differences in physical activity and physical inactivity in women with different femoral BMD.[VÝCHODISKA: U postmenopauzálních žen je pohybová aktivita důležitá jako prevence úbytku kostní denzity a osteoporózy a přispívá tak ke snížování rizika zlomenin. CÍLE: Cílem této průřezové studie bylo zjištění, zda existují rozdíly v habituální pohybové aktivitě, pohybové inaktivitě a v plnění doporučení k pohybové aktivitě mezi ženami s normáln

  18. Intergranular Corrosion Behavior of 304LN Stainless Steel Heat Treated at 623 K (350 °C)

    Science.gov (United States)

    Singh, Raghuvir; Kumar, Mukesh; Ghosh, Mainak; Das, Gautam; Singh, P. K.; Chattoraj, I.

    2013-01-01

    Low temperature sensitization of 304LN stainless steel from the two pipes, differing slightly in chemical composition, has been investigated; specimens were aged at 623 K (350 °C) for 20,000 hours and evaluated for intergranular corrosion and degree of sensitization. The base and heat-affected zone (HAZ) of the 304LN-1 appear resistant to sensitization, while 304LN-2 revealed a "dual" type microstructure at the transverse section and HAZ. The microstructure at 5.0-mm distance from the fusion line indicates qualitatively less sensitization as compared to that at 2.0 mm. The 304LN-2 base alloy shows overall lower degree of sensitization values as compared to the 304LN-1. A similar trend of degree of sensitization was observed in the HAZ where it was higher in the 304LN-1 as compared to the 304LN-2. The weld zone of both the stainless steels suffered from cracking during ASTM A262 practice E, while the parent metals and HAZs did not show such fissures. A mottled image within the ferrite lamella showed spinodal decomposition. The practice E test and transmission electron microscopy results indicate that the interdendritic regions may suffer from failure due to carbide precipitation and due to the evolution of brittle phase from spinodal decomposition.

  19. Ni2+-binding RNA motifs with an asymmetric purine-rich internal loop and a G-A base pair.

    Science.gov (United States)

    Hofmann, H P; Limmer, S; Hornung, V; Sprinzl, M

    1997-01-01

    RNA molecules with high affinity for immobilized Ni2+ were isolated from an RNA pool with 50 randomized positions by in vitro selection-amplification. The selected RNAs preferentially bind Ni2+ and Co2+ over other cations from first series transition metals. Conserved structure motifs, comprising about 15 nt, were identified that are likely to represent the Ni2+ binding sites. Two conserved motifs contain an asymmetric purine-rich internal loop and probably a mismatch G-A base pair. The structure of one of these motifs was studied with proton NMR spectroscopy and formation of the G-A pair at the junction of helix and internal loop was demonstrated. Using Ni2+ as a paramagnetic probe, a divalent metal ion binding site near this G-A base pair was identified. Ni2+ ions bound to this motif exert a specific stabilization effect. We propose that small asymmetric purine-rich loops that contain a G-A interaction may represent a divalent metal ion binding site in RNA. PMID:9409620

  20. Two Classes of Power Series and Applications

    Science.gov (United States)

    Chen, Hongwei

    2002-01-01

    In this note, using the method of undetermined coefficients, we obtain the power series for exp ( f ( x )) and ln ( f ( x )) by means of a simple recursion. As applications, we show how those power series can be used to reproduce and improve some well-known results in analysis. These results may be used as enrichment material in an advanced…

  1. Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy.

    Science.gov (United States)

    Wei, Wei; Qin, Zhixin; Fan, Shunfei; Li, Zhiwei; Shi, Kai; Zhu, Qinsheng; Zhang, Guoyi

    2012-10-10

    A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga2O3/GaN structure is 1.40 ± 0.08 eV.

  2. Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1-xFex)2O3 multilayer thin films.

    Science.gov (United States)

    Guo, Daoyou; An, Yuehua; Cui, Wei; Zhi, Yusong; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Li, Peigang; Wu, Zhenping; Tang, Weihua

    2016-04-28

    Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe(2+) and Fe(3+) are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What's more, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3.

  3. High spin levels in 66Ga, 68Ga, 70Ga and 68Ge, 70Ge, 72Ge via fusion evaporation reactions induced by α-particles

    International Nuclear Information System (INIS)

    Morand, C.

    1979-01-01

    The high spin (J 70 Ga all the members (except the 3 - one) of the (πpsub(3/2), νgsub(9/2)) configuration have been identified, in addition with the (πfsub(5/2), νgsub(9/2))sub(7 - ) and (πgsub(9/2), νgsub(9/2))sub(9 + ) states. In 66 Ga and 68 Ga most of the levels with J>7 ca be described as a result of maximum coupling of a gsub(9/2) neutron with the odd Ga core. Thus the (πgsub(9/2), νgsub(9/2))sub(9 + ) states have been safely located. In the same way the even Ge, the backbending effect at the Jsup(π)=8 + state is less and less pronouced from the 68 Ge to the 72 Ge; that can be explained by the (νgsub(9/2)) 2 sub(8 + ) configuration of this state, so that the 8 + →6 + γ-transition is more and more allowed with increasing N, i.e. as the νgsub(9/2) shell acts more and more in the lower yrast levels Jsup(π)=0 + , 2 + , 4 + , 6 + configurations [fr

  4. Temperature dependence of the dielectric tensor of monoclinic Ga2O3 single crystals in the spectral range 1.0-8.5 eV

    Science.gov (United States)

    Sturm, C.; Schmidt-Grund, R.; Zviagin, V.; Grundmann, M.

    2017-08-01

    The full dielectric tensor of monoclinic Ga2O3 (β-phase) was determined by generalized spectroscopic ellipsometry in the spectral range from 1.0 eV up to 8.5 eV and temperatures in the range from 10 K up to 300 K. By using the oriented dipole approach, the energies and broadenings of the excitonic transitions are determined as a function of the temperature, and the exciton-phonon coupling properties are deduced.

  5. Suitable conditions for xylanases activities from Bacillus sp. GA2(1 and Bacillus sp. GA1(6 and their properties for agricultural residues hydrolysis

    Directory of Open Access Journals (Sweden)

    Sudathip Chantorn

    2016-04-01

    Full Text Available Bacillus sp. GA2(1 and Bacillus sp. GA1(6 were isolated from soybean field in Khon Kaen province, Thailand. Crude enzymes from both isolates showed the activities of cellulase, xylanase, and mannanase at 37°C for 24 h. The highest xylanase activities of Bacillus sp. GA2(1 and Bacillus sp. GA1(6 were 1.58±0.25 and 0.82±0.16 U/ml, respectively. The relative xylanase activities from both strains were more than 60% at pH 5.0 to 8.0. The optimum temperature of xylanases was 50°C in both strains. The residual xylanase activities from both strains were more than 70% at 60°C for 60 min. Five agricultural wastes (AWs, namely coffee residue, soybean meal, potato peel, sugarcane bagasse, and corn cobs, were used as substrates for hydrolysis properties. The highest reducing sugar content of 101±1.32 µg/ml was obtained from soybean meal hydrolysate produced by Bacillus sp. GA2(1 xylanase.

  6. Effects of As/P exchange on InAs/lnP (100) quantum dots formation by metalorganic chemical vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Barik, S; Tan, H H; Jagadish, C [The Australian National University, ACT (Australia). Research School of Physical Sciences and Engineering, Department of Electronic Materials Engineering

    2005-07-01

    Full text: Self-assembled InAs/lnP quantum dots (QDs) are very promising active materials for QD lasers and semiconductor amplifiers for optical fiber communications (1.3-1.55 mm). However the main challenge associated with this material system is the As/P exchange reaction which degrades the structural and optical properties of the QDs. In this talk, we will show the effect of growing a thin spacer layer of GaAs or InGaAs prior to the deposition of the InAs QDs by metalorganic chemical vapor deposition. Not only the effect of As/P exchange is suppressed or minimized but the bandgap of the QDs could be tuned too. Copyright (2005) Australian Institute of Physics.

  7. Effects of Out-of-Plane Disorder on the Nodal Quasiparticle and Superconducting Gap in Single-Layer Bi_2Sr_1.6Ln_0.4CuO_6 delta (Ln = La, Nd, Gd)

    Energy Technology Data Exchange (ETDEWEB)

    Hashimoto, M.

    2011-01-04

    How out-of-plane disorder affects the electronic structure has been investigated for the single-layer cuprates Bi{sub 2}Sr{sub 1.6}Ln{sub 0.4}CuO{sub 6+{delta}} (Ln = La, Nd, Gd) by angle-resolved photoemission spectroscopy. We have observed that, with increasing disorder, while the Fermi surface shape and band dispersions are not affected, the quasi-particle width increases, the anti-nodal gap is enhanced and the superconducting gap in the nodal region is depressed. The results indicate that the superconductivity is significantly depressed by out-of-plane disorder through the enhancement of the anti-nodal gap and the depression of the superconducting gap in the nodal region.

  8. Behaviour of LaAlO 3 +LnTiTaO 6 (Ln= Ce, Pr or Nd)

    Indian Academy of Sciences (India)

    The 0.1LaAlO3+0.9LnTiTaO6 (Ln= Ce, Pr or Nd) ceramics are prepared through solid state ceramic route. The structure of the materials is studied using X-ray diffraction analysis. The microstructure is analysed using scanning electron microscopy. The dielectric properties in the radio as well as in the microwave frequencies ...

  9. AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

    Science.gov (United States)

    Liu, Xinke; Lu, Youming; Yu, Wenjie; Wu, Jing; He, Jiazhu; Tang, Dan; Liu, Zhihong; Somasuntharam, Pannirselvam; Zhu, Deliang; Liu, Wenjun; Cao, Peijiang; Han, Sun; Chen, Shaojun; Seow Tan, Leng

    2015-01-01

    Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a shift-down of the conduction band at the AlGaN/GaN interface. This increases the 2-dimensional electron gas (2-DEG) density in the source/drain access region of the AlGaN/GaN heterostructure, and thereby reduces the source/drain series resistance. Detailed material characterization of the P(VDF-TrFE) ferroelectric film was also carried out using the atomic force microscopy (AFM), X-ray Diffraction (XRD), and ferroelectric hysteresis loop measurement. PMID:26364872

  10. Sintering Studies of Ga-Doped CeO2 (Ga-Doped PuO2 Surrogate) for Mixed Oxide Nuclear Fuel

    International Nuclear Information System (INIS)

    Haertling, C.; Huling, J.; Park, Y.S.

    1999-01-01

    Sintering studies of CeO 2 and CeO 2 + 2 wt. % Ga 2 O 3 were completed. Firing temperatures studied were 1250-1650 C with 2 to 4 hour firing soak times in air. Powders fabricated by three methods (as-received, attrition-mill and nitrite-derived) were studied. Attrition-milled CeO 2 improved densities as compared with as-received CeO 2 . Attrition-milled CeO 2 with 2 wt.% Ga 2 O 3 showed decreased densities with increasing temperatures. As-received CeO 2 with 2 wt.% Ga 2 O 3 showed a opposite trend, increasing in density with increased firing temperature. Two pellet preparation methods were studied, a one-step-press method and a two-step-press method. The two-step-press method showed greater densities at lower firing temperatures and times as compared with the one-step-press method, however for CeO 2 + 2 wt.% Ga 2 O 3 , the two methods gave equivalent results at 1650 C, 6 hr. firing conditions

  11. The current–voltage and capacitance–voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Özerli, Halil; Karteri, İbrahim [Department of Materials Science And Engineering, Kahramanmaraş Sütçü İmam University, 46100 Kahramanmaraş (Turkey); Karataş, Şükrü, E-mail: skaratas@ksu.edu.tr [Department of Materials Science And Engineering, Kahramanmaraş Sütçü İmam University, 46100 Kahramanmaraş (Turkey); Department of Physics, Kahramanmaraş Sütçü İmam University, 46100 Kahramanmaraş (Turkey); Altindal, Şemsettin [Department of Physics, Gazi University, 06100 Ankara (Turkey)

    2014-05-01

    Highlights: • The electronic parameters of the diode under temperature were investigated. • The barrier heights have a Gaussian distribution. • Au/n-GaAs diode exhibits a rectification behavior. - Abstract: We have investigated the temperature-dependent current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs) in the temperature range of 280–415 K. The barrier height for the Au/n-type GaAs SBDs from the I–V and C–V characteristics have varied from 0.901 eV to 0.963 eV (I–V) and 1.234 eV to 0.967 eV (C–V), and the ideality factor (n) from 1.45 to 1.69 in the temperature range 280–415 K. The conventional Richardson plots are found to be linear in the temperature range measured. Both the ln(I{sub 0}/T{sup 2}) versus (kT){sup −1} and ln(I{sub 0}/T{sup 2}) versus (nkT){sup −1} plots gives a straight line corresponding to activation energies 0.773 eV and 0.870 eV, respectively. A Φ{sub b0} versus 1/T plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of Φ{sup ¯}{sub b0} = 1.071 eV and σ{sub 0} = 0.094 V for the mean BH and zero-bias standard deviation have been obtained from this plot.

  12. The current–voltage and capacitance–voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs

    International Nuclear Information System (INIS)

    Özerli, Halil; Karteri, İbrahim; Karataş, Şükrü; Altindal, Şemsettin

    2014-01-01

    Highlights: • The electronic parameters of the diode under temperature were investigated. • The barrier heights have a Gaussian distribution. • Au/n-GaAs diode exhibits a rectification behavior. - Abstract: We have investigated the temperature-dependent current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs) in the temperature range of 280–415 K. The barrier height for the Au/n-type GaAs SBDs from the I–V and C–V characteristics have varied from 0.901 eV to 0.963 eV (I–V) and 1.234 eV to 0.967 eV (C–V), and the ideality factor (n) from 1.45 to 1.69 in the temperature range 280–415 K. The conventional Richardson plots are found to be linear in the temperature range measured. Both the ln(I 0 /T 2 ) versus (kT) −1 and ln(I 0 /T 2 ) versus (nkT) −1 plots gives a straight line corresponding to activation energies 0.773 eV and 0.870 eV, respectively. A Φ b0 versus 1/T plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of Φ ¯ b0 = 1.071 eV and σ 0 = 0.094 V for the mean BH and zero-bias standard deviation have been obtained from this plot

  13. Laténské pohřebiště v pískovnách u Vliněvsi, okr. Mělník

    Czech Academy of Sciences Publication Activity Database

    Limburský, Petr; Sankot, P.; Březinová, Helena; Likovský, Jakub

    2015-01-01

    Roč. 106, prosinec (2015), s. 181-246 ISSN 0031-0506 Grant - others:GA UK(CZ) 564512 Institutional support: RVO:67985912 Keywords : Central Bohemia * Mělník region * cemetery * La Tène period * chronology * social structure * interregional ties to western Europe and the Danube region Subject RIV: AC - Archeology, Anthropology, Ethnology

  14. Group 13 β-ketoiminate compounds: gallium hydride derivatives as molecular precursors to thin films of Ga2O3.

    Science.gov (United States)

    Pugh, David; Marchand, Peter; Parkin, Ivan P; Carmalt, Claire J

    2012-06-04

    Bis(β-ketoimine) ligands, [R{N(H)C(Me)-CHC(Me)═O}(2)] (L(1)H(2), R = (CH(2))(2); L(2)H(2), R = (CH(2))(3)), linked by ethylene (L(1)) and propylene (L(2)) bridges have been used to form aluminum, gallium, and indium chloride complexes [Al(L(1))Cl] (3), [Ga(L(n))Cl] (4, n = 1; 6, n = 2) and [In(L(n))Cl] (5, n = 1; 7, n = 2). Ligand L(1) has also been used to form a gallium hydride derivative [Ga(L(1))H] (8), but indium analogues could not be made. β-ketoimine ligands, [Me(2)N(CH(2))(3)N(H)C(R')-CHC(R')═O] (L(3)H, R' = Me; L(4)H, R' = Ph), with a donor-functionalized Lewis base have also been synthesized and used to form gallium and indium alkyl complexes, [Ga(L(3))Me(2)] (9) and [In(L(3))Me(2)] (10), which were isolated as oils. The related gallium hydride complexes, [Ga(L(n))H(2)] (11, n = 3; 12, n = 4), were also prepared, but again no indium hydride species could be made. The complexes were characterized mainly by NMR spectroscopy, mass spectrometry, and single crystal X-ray diffraction. The β-ketoiminate gallium hydride compounds (8 and 11) have been used as single-source precursors for the deposition of Ga(2)O(3) by aerosol-assisted (AA)CVD with toluene as the solvent. The quality of the films varied according to the precursor used, with the complex [Ga(L(1))H] (8) giving by far the best quality films. Although the films were amorphous as deposited, they could be annealed at 1000 °C to form crystalline Ga(2)O(3). The films were analyzed by powder XRD, SEM, and EDX.

  15. A series of three-dimensional lanthanide coordination polymers with rutile and unprecedented rutile-related topologies.

    Science.gov (United States)

    Qin, Chao; Wang, Xin-Long; Wang, En-Bo; Su, Zhong-Min

    2005-10-03

    The complexes of formulas Ln(pydc)(Hpydc) (Ln = Sm (1), Eu (2), Gd (3); H2pydc = pyridine-2,5-dicarboxylic acid) and Ln(pydc)(bc)(H2O) (Ln = Sm (4), Gd (5); Hbc = benzenecarboxylic acid) have been synthesized under hydrothermal conditions and characterized by elemental analysis, IR, TG analysis, and single-crystal X-ray diffraction. Compounds 1-3 are isomorphous and crystallize in the orthorhombic system, space group Pbcn. Their final three-dimensional racemic frameworks can be considered as being constructed by helix-linked scalelike sheets. Compounds 4 and 5 are isostructural and crystallize in the monoclinic system, space group P2(1)/c. pydc ligands bridge dinuclear lanthanide centers to form the three-dimensional frameworks featuring hexagonal channels along the a-axis that are occupied by one-end-coordinated bc ligands. From the topological point of view, the five three-dimensional nets are binodal with six- and three-connected nodes, the former of which exhibit a rutile-related (4.6(2))(2)(4(2).6(9).8(4)) topology that is unprecedented within coordination frames, and the latter two species display a distorted rutile (4.6(2))(2)(4(2).6(10).8(3)) topology. Furthermore, the luminescent properties of 2 were studied.

  16. Antiferromagnetic coupling between rare earth ions and semiquinones in a series of 1:1 complexes.

    Science.gov (United States)

    Caneschi, Andrea; Dei, Andrea; Gatteschi, Dante; Poussereau, Sandrine; Sorace, Lorenzo

    2004-04-07

    We use the strategy of diamagnetic substitution for obtaining information on the crystal field effects in paramagnetic rare earth ions using the homologous series of compounds with the diamagnetic tropolonato ligand, Ln(Trp)(HBPz(3))(2), and the paramagnetic semiquinone ligand, Ln(DTBSQ)(HBPz(3))(2), (DTBSQ = 3,5-di-tert-butylsemiquinonato, Trp = tropolonate, HBPz(3)= hydrotrispyrazolylborate) for Ln = Sm(iii), Eu(iii), Gd(iii), Tb(iii), Dy(iii), Ho(iii), Er(iii) or Yb(iii). The X-ray crystal structure of a new form of tropolonate derivative is presented, which shows, as expected, a marked similarity with the structure of the semiquinonate derivative. The Ln(Trp)(HBPz(3))(2) derivatives were then used as a reference for the qualitative determination of crystal field effects in the exchange coupled semiquinone derivatives. Through magnetisation and susceptibility measurements this empirical diamagnetic substitution method evidenced for Er(iii), Tb(iii), Dy(iii) and Yb(iii) derivatives a dominating antiferromagnetic coupling. The increased antiferromagnetic contribution compared to other radical-rare earth metal complexes formed by nitronyl nitroxide ligands may be related to the increased donor strength of the semiquinone ligand.

  17. Integration of epitaxial Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} films on GaN/AlGaN/GaN/Si(111) substrates using rutile TiO{sub 2} buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    Elibol, K. [MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede (Netherlands); Nguyen, M.D. [MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede (Netherlands); SolMateS B.V., Drienerlolaan 5, Building 6, 7522NB Enschede (Netherlands); International Training Institute for Materials Science, Hanoi University of Science and Technology, No.1 Dai Co Viet road, Hanoi 10000 (Viet Nam); Hueting, R.J.E. [MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede (Netherlands); Gravesteijn, D.J. [MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede (Netherlands); NXP Semiconductors Research, High Tech Campus 46, 5656AE Eindhoven (Netherlands); Koster, G., E-mail: g.koster@utwente.nl [MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede (Netherlands); Rijnders, G. [MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede (Netherlands)

    2015-09-30

    The integration of ferroelectric layers on gallium nitride (GaN) offers a great potential for various applications. Lead zirconate titanate (PZT), in particular Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3}, is an interesting candidate. For that a suitable buffer layer should be grown on GaN in order to prevent the reaction between PZT and GaN, and to obtain PZT with a preferred orientation and phase. Here, we study pulsed laser deposited (100) rutile titanium oxide (R-TiO{sub 2}) as a potential buffer layer candidate for ferroelectric PZT. For this purpose, the growth, morphology and the surface chemical composition of R-TiO{sub 2} films were analyzed by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. We find optimally (100) oriented R-TiO{sub 2} growth on GaN (0002) using a 675 °C growth temperature and 2 Pa O{sub 2} deposition pressure as process conditions. More importantly, the R-TiO{sub 2} buffer layer grown on GaN/Si substrates prevents the unwanted formation of the PZT pyrochlore phase. Finally, the remnant polarization and coercive voltage of the PZT film on TiO{sub 2}/GaN/Si with an interdigitated-electrode structure were found to be 25.6 μC/cm{sup 2} and 8.1 V, respectively. - Highlights: • Epitaxial rutile TiO{sub 2} films were grown on GaN layer buffered Si substrate using pulsed laser deposition. • The rutile-TiO{sub 2} layer suppresses the formation of the pyrochlore phase in the epitaxial PZT film grown on GaN/Si. • An epitaxial PZT film on GaN/Si substrate with rutile TiO{sub 2} buffer layer exhibits good ferroelectric properties.

  18. Improved GaSb surfaces using a (NH4)2S/(NH4)2S04 solution

    International Nuclear Information System (INIS)

    Murape, D.M.; Eassa, N.; Nyamhere, C.; Neethling, J.H.; Betz, R.; Coetsee, E.; Swart, H.C.; Botha, J.R.; Venter, A.

    2012-01-01

    Bulk (1 0 0) n-GaSb surfaces have been treated with a sulphur based solution ((NH 4 ) 2 S/(NH 4 ) 2 SO 4 ) to which sulphur has been added, not previously reported for the passivation of GaSb surfaces. Au/n-GaSb Schottky barrier diodes (SBDs) fabricated on the treated material show significant improvement compared to that of the similar SBDs on the as-received material as evidenced by the lower ideality factor (n), higher barrier height (φ b ) and lower contact resistance obtained. Additionally, the reverse leakage current, although not saturating, has been reduced by almost an order of magnitude at −0.2 V. The sample surfaces were studied by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The native oxide, Sb–O, present on the as-received material is effectively removed on treating with ([(NH 4 ) 2 S/(NH 4 ) 2 SO 4 ]+S) and (NH 4 ) 2 S. Analysis of the as-received surface by XPS, prior to and after argon sputtering, suggests that the native oxide layer is ≤8.5 nm.

  19. Delineating sites of failure following post-prostatectomy radiation treatment using 68Ga-PSMA-PET.

    Science.gov (United States)

    Byrne, Keelan; Eade, Thomas; Kneebone, Andrew; Guo, Linxin; Hsiao, Ed; Schembri, Geoff; Kwong, Carolyn; Hunter, Julia; Emmett, Louise; Hruby, George

    2018-02-01

    To identify sites of failure with 68 Ga-PSMA-PET (PSMA-PET) imaging in patients who have Biochemical Failure (BF) following post-prostatectomy radiotherapy. Between June 2006 and January 2016, 409 men received post prostatectomy intensity modulated radiation treatment (IMRT) with protocolised planning. 310 patients received radiation treatment (RT) to the Prostate Fossa (PF) alone and 99 patients received RT to PF and pelvic lymphatics (PF + LN) usually in combination with androgen deprivation (AD) therapy. Any failure not detected on conventional imaging was delineated with PSMA-PET scanning. Sites of failure were characterised as in-field (PF ± LN), or out of field (nodal alone, distant metastatic alone (visceral or bone) or multi-site failure). Nodal failure was further divided into pelvic failure and/or distant failure. 119 men developed BF, defined as a PSA rise of >0.2 or greater, above post-RT nadir. Freedom from BF was 71% in the PF group and 70% in the PF + LN group, with median follow up of 52 and 44 months respectively. AD was used concomitantly in 13% of the PF group and 92% of the PF + LN group. 81 patients with BF (68%) had PSMA-PET imaging performed as per study intent, 67 (80%) of whom had PSMA avid disease identified. PSMA-PET delineated in-field failure occurred in 2/50 (4%) of the PF group and 1/17 (6%) in the PF + LN group. Nodal failure alone was 33/50 (66%) for the PF group vs 7/17 (41%) for the PF + LN group. For the nodal only failure patients, 18/33 (55%) had pelvic-only nodal failure in the PF group compared to 1/7 (14%) in the PF + LN group (p = 0.03). 16 (32%) of the PSMA avid failures in the PF group would have been encompassed by standard pelvic lymphatic radiotherapy volumes. Post-prostatectomy radiation treatment resulted in excellent in-field control rates. Isolated pelvic nodal failure was rare in those receiving radiotherapy to the prostatic fossa and pelvic nodes but accounted for one third of

  20. Genetic isolation of a blood pressure quantitative trait locus on chromosome 2 in the spontaneously hypertensive rat

    Czech Academy of Sciences Publication Activity Database

    Pravenec, Michal; Zídek, Václav; Musilová, Alena; Vorlíček, Jaroslav; Křen, Vladimír; St. Lezin, E.; Kurtz, T. W.

    2001-01-01

    Roč. 19, č. 6 (2001), s. 1061-1064 ISSN 0263-6352 R&D Projects: GA ČR(CZ) GA305/00/1646; GA MŠk(CZ) LN00A079; GA ČR(CZ) GV204/98/K015 Grant - others:HHMI(US) 55000331 Institutional research plan: CEZ:AV0Z5011922 Keywords : spontaneously hypertensive rat * chromosome 2 * congenic Subject RIV: EB - Genetics ; Molecular Biology Impact factor: 4.210, year: 2001

  1. Moessbauer studies of the LiAl sub(5-x) Fe sub(x) O8 and LiGa sub(5-x) Fe sub(x) O8 systems

    International Nuclear Information System (INIS)

    Barthem, V.M.T.S.; Maria Neto, J.; Souza Barros, F. de

    1982-01-01

    Comparative Moessbauer studies of the LiGa sub(5-x) Fe sub(x) O 8 and LiAl sub(5-x) Fe sub(x) O 8 systems are shown. The characteristics of the Moessbauer spectra, obtained with LiGa 5 O 8 samples with 0,1% of Fe 3+ , differ drastically from that observed with LiAl 5 O 8 with the same three-valent iron concentration. All these differences are related to the more covalent character of the gallium-oxygen binding, when compared with the aluminium-oxygen one. (L.C.) [pt

  2. Crystal orientation of monoclinic β-Ga2O3 thin films formed on cubic MgO substrates with a γ-Ga2O3 interfacial layer

    Science.gov (United States)

    Nakagomi, Shinji; Kokubun, Yoshihiro

    2017-12-01

    The crystal orientation relationship between β-Ga2O3 and MgO in β-Ga2O3 thin films prepared on (1 0 0), (1 1 1), and (1 1 0) MgO substrates was investigated by X-ray diffraction measurements and cross-sectional transmission electron microscopy images. The γ-Ga2O3 interfacial layer was present between β-Ga2O3 and MgO acted as a buffer to connect β-Ga2O3 on MgO. The following conditions were satisfied under each case: β-Ga2O3 (1 0 0)||MgO (1 0 0) and β-Ga2O3 [0 0 1]||MgO 〈0 1 1〉 for the formation of β-Ga2O3 on (1 0 0) MgO, and β-Ga2O3 (2 bar 0 1)||MgO (1 1 1) for the formation of β-Ga2O3 on (1 1 1) MgO, as well as each condition of β-Ga2O3 [0 1 0] (1 0 0)||MgO [ 1 bar 1 0 ] (0 0 1), β-Ga2O3 [0 1 0] (1 0 0)||MgO [ 0 1 bar 1 ] (1 0 0), and β-Ga2O3 [0 1 0] (1 0 0)||MgO [ 1 0 1 bar ] (0 1 0). β-Ga2O3 (1 bar 0 2)||MgO(1 1 0) and β-Ga2O3 [0 1 0] ⊥ MgO [0 0 1] for β-Ga2O3 formed on (1 1 0) MgO. The β-Ga2O3 formed on (1 1 1) MgO at 800 °C exhibited a threefold structure. The β-Ga2O3 formed on (1 1 0) MgO had a twofold structure but different by 90° from the result reported previously.

  3. Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

    Science.gov (United States)

    Zhang, Yuewei; Neal, Adam; Xia, Zhanbo; Joishi, Chandan; Johnson, Jared M.; Zheng, Yuanhua; Bajaj, Sanyam; Brenner, Mark; Dorsey, Donald; Chabak, Kelson; Jessen, Gregg; Hwang, Jinwoo; Mou, Shin; Heremans, Joseph P.; Rajan, Siddharth

    2018-04-01

    In this work, we demonstrate a high mobility two-dimensional electron gas (2DEG) formed at the β-(AlxGa1-x)2O3/Ga2O3 interface through modulation doping. Shubnikov-de Haas (SdH) oscillations were observed in the modulation-doped β-(AlxGa1-x)2O3/Ga2O3 structure, indicating a high-quality electron channel formed at the heterojunction interface. The formation of the 2DEG channel was further confirmed by the weak temperature dependence of the carrier density, and the peak low temperature mobility was found to be 2790 cm2/Vs, which is significantly higher than that achieved in bulk-doped Beta-phase Gallium Oxide (β-Ga2O3). The observed SdH oscillations allowed for the extraction of the electron effective mass in the (010) plane to be 0.313 ± 0.015 m0 and the quantum scattering time to be 0.33 ps at 3.5 K. The demonstrated modulation-doped β-(AlxGa1-x)2O3/Ga2O3 structure lays the foundation for future exploration of quantum physical phenomena and semiconductor device technologies based on the β-Ga2O3 material system.

  4. Metallacarborane chemistry of the hypho-[6,7-C2B6H13](-)1-anion: the formation of uniquely structured metallacarboranes [5-Cp*-arachno-5,4,6-RhC2B6H12] and [2,5-Cp-2(*)-10-Me-nido-2,5,1-Rh2CB6H9] (Cp-* = eta(5)-C5Me5-): complete rhodium analogues of arachno-4,6-C2B7H13 and nido-1-CB8H12

    Czech Academy of Sciences Publication Activity Database

    Londesborough, Michael Geoffrey Stephen; Janoušek, Zbyněk; Štíbr, Bohumil; Císařová, I.

    2004-01-01

    Roč. 689, č. 16 (2004), s. 2702-2706 ISSN 0022-328X R&D Projects: GA MŠk LN00A028 Institutional research plan: CEZ:AV0Z4032918 Keywords : boranes * metallacarboranes * rhodium complex Subject RIV: CA - Inorganic Chemistry Impact factor: 1.905, year: 2004

  5. Molecular modeling of human MT2 melatonin receptor: the role of Val204, Leu272 and Tyr298 in ligand binding

    Czech Academy of Sciences Publication Activity Database

    Mazna, Petr; Obšilová, Veronika; Jelínková, Irena; Balík, Aleš; Berka, K.; Sovová, Žofie; Ettrich, Rüdiger; Svoboda, Petr; Obšil, T.; Teisinger, Jan

    2004-01-01

    Roč. 91, č. 4 (2004), s. 836-842 ISSN 0022-3042 R&D Projects: GA ČR GA309/02/1479; GA ČR GA309/04/0496; GA ČR GA204/03/0714; GA AV ČR IAA5011103; GA AV ČR IAA5011408; GA AV ČR KJB5011308; GA MŠk LN00A141 Institutional research plan: CEZ:AV0Z5011922; CEZ:MSM 113100001 Keywords : homology modeling * MT2 melatonin receptor * site-directed mutagenesis Subject RIV: FR - Pharmacology ; Medidal Chemistry Impact factor: 4.824, year: 2004

  6. High-Pressure Synthesis, Structure, and Magnetic Properties of Ge-Substituted Filled Skutterudite Compounds; LnxCo4Sb12−yGey, Ln = La, Ce, Pr, and Nd

    Directory of Open Access Journals (Sweden)

    Hiroshi Fukuoka

    2017-12-01

    Full Text Available A series of new Ge-substituted skutterudite compounds with the general composition of LnxCo4Sb12−yGey, where Ln = La, Ce, Pr, and Nd, is prepared by high-pressure and high-temperature reactions at 7 GPa and 800 °C. They have a cubic unit cell and the lattice constant for each compound is 8.9504 (3, 8.94481 (6, 8.9458 (3, and 8.9509 (4 Å for the La, Ce, Pr, and Nd derivatives, respectively. Their chemical compositions, determined by electron prove microanalysis, are La0.57Co4Sb10.1Ge2.38, Ce0.99Co4Sb9.65Ge2.51, Pr0.97Co4Sb9.52Ge2.61, and Nd0.87Co4Sb9.94Ge2.28. Their structural parameters are refined by Rietveld analysis. The guest atom size does not affect the unit cell volume. The Co–Sb/Ge distance mainly determines the unit cell size as well as the size of guest atom site. The valence state of lanthanide ions is 3+.

  7. Synthetic routes to a nanoscale inorganic cluster [Ga{sub 13}(μ{sub 3}-OH){sub 6}(μ{sub 2}-OH){sub 18}(H{sub 2}O)](NO{sub 3}){sub 15} evaluated by solid-state {sup 71}Ga NMR

    Energy Technology Data Exchange (ETDEWEB)

    Hammann, Blake A. [Department of Chemistry, Washington University in St. Louis, St. Louis, MO 63130 (United States); Marsh, David A. [Department of Chemistry and Biochemistry, University of Oregon, Eugene, OR 97403 (United States); Ma, Zayd L. [Department of Chemistry, Washington University in St. Louis, St. Louis, MO 63130 (United States); Wood, Suzannah R. [Department of Chemistry and Biochemistry, University of Oregon, Eugene, OR 97403 (United States); Eric West, Michael [Department of Chemistry, Washington University in St. Louis, St. Louis, MO 63130 (United States); Johnson, Darren W. [Department of Chemistry and Biochemistry, University of Oregon, Eugene, OR 97403 (United States); Hayes, Sophia E., E-mail: hayes@wustl.edu [Department of Chemistry, Washington University in St. Louis, St. Louis, MO 63130 (United States)

    2016-10-15

    Solid-state {sup 71}Ga NMR was used to characterize a series of [Ga{sub 13}(μ{sub 3}-OH){sub 6}(μ{sub 2}-OH){sub 18}(H{sub 2}O)](NO{sub 3}){sub 15} “Ga{sub 13}” molecular clusters synthesized by multiple methods. These molecular clusters are precursors to thin film electronics and may be employed in energy applications. The synthetic routes provide varying levels of impurities in the solid phase, and these impurities often elude traditional characterization techniques such as powder X-ray diffraction and Raman spectroscopy. Solid-state NMR can provide a window into the gallium species even in amorphous phases. This information is vital in order to prevent the impurities from causing defect sites in the corresponding thin films upon gelation and condensation (polymerization) of the Ga{sub 13} clusters. This work demonstrates the resolving power of solid-state NMR to evaluate structure and synthetic quality in the solid state, and the application of high-field NMR to study quadrupolar species, such as {sup 71}Ga. - Graphical abstract: The various synthetic routes and {sup 71}Ga solid-state NMR spectra of the nanoscale inorganic cluster [Ga{sub 13}(μ{sub 3}-OH){sub 6}(μ{sub 2}-OH){sub 18}(H{sub 2}O)](NO{sub 3}){sub 15}. - Highlights: • Solid-state {sup 71}Ga NMR of hydroxo-aquo metal clusters and the impurities present. • High-field NMR capability allows for quadrupolar species, such as {sup 71}Ga, to be routinely studied. • Efficient and environmentally friendly synthetic routes have been developed to prepare hydroxo-aquo metal clusters.

  8. Observation of the transition from diffusive regime to ballistic regime of the 2DEG transport property in Al xGa1-xN/GaN heterostructures

    International Nuclear Information System (INIS)

    Han, K.; Shen, B.; Tang, N.; Tang, Y.Q.; He, X.W.; Qin, Z.X.; Yang, Z.J.; Zhang, G.Y.; Lin, T.; Zhu, B.; Zhou, W.Z.; Chu, J.H.

    2007-01-01

    Electron-electron interaction effect of the two-dimensional electron gas (2DEG) in Al x Ga 1-x N/GaN heterostructures has been investigated by means of magnetotransport measurements at low temperatures. From the temperature dependence of the longitudinal conductivity of the heterostructures, a clear transition region has been observed. Based on the theoretical analysis, we conclude that this region corresponds to the transition from the diffusive regime to the ballistic regime of the 2DEG transport property. The interaction constant is determined to be -0.423, which is consistent with the theoretical prediction. However, the critical temperature for the transition, which is 8 K in Al x Ga 1-x N/GaN heterostructures, is much higher than the theoretical prediction

  9. Fluorinated 2-alkyl-2-oxazolines of high reactivity: spacer-length-induced acceleration for cationic ring-opening polymerization as a basis for triphilic block copolymer synthesis

    Czech Academy of Sciences Publication Activity Database

    Kaberov, Leonid; Verbraeken, B.; Riabtseva, Anna; Brus, Jiří; Talmon, Y.; Štěpánek, Petr; Hoogenboom, R.; Filippov, Sergey K.

    2018-01-01

    Roč. 7, č. 1 (2018), s. 7-10 ISSN 2161-1653 R&D Projects: GA ČR(CZ) GA17-00973S Grant - others:AV ČR(CZ) FWO-17-05 Program:Bilaterální spolupráce Institutional support: RVO:61389013 Keywords : poly(2-oxazoline)s * triblock copolymers * fluorinated Subject RIV: BO - Biophysics OBOR OECD: Biophysics Impact factor: 6.185, year: 2016

  10. Juvenile crust formation in the Zimbabwe Craton deduced from the O-Hf isotopic record of 3.8-3.1 Ga detrital zircons

    Science.gov (United States)

    Bolhar, Robert; Hofmann, Axel; Kemp, Anthony I. S.; Whitehouse, Martin J.; Wind, Sandra; Kamber, Balz S.

    2017-10-01

    Hafnium and oxygen isotopic compositions measured in-situ on U-Pb dated zircon from Archaean sedimentary successions belonging to the 2.9-2.8 Ga Belingwean/Bulawayan groups and previously undated Sebakwian Group are used to characterize the crustal evolution of the Zimbabwe Craton prior to 3.0 Ga. Microstructural and compositional criteria were used to minimize effects arising from Pb loss due to metamorphic overprinting and interaction with low-temperature fluids. 207Pb/206Pb age spectra (concordance >90%) reveal prominent peaks at 3.8, 3.6, 3.5, and 3.35 Ga, corresponding to documented geological events, both globally and within the Zimbabwe Craton. Zircon δ18O values from +4 to +10‰ point to both derivation from magmas in equilibrium with mantle oxygen and the incorporation of material that had previously interacted with water in near-surface environments. In εHf-time space, 3.8-3.6 Ga grains define an array consistent with reworking of a mafic reservoir (176Lu/177Hf ∼0.015) that separated from chondritic mantle at ∼3.9 Ga. Crustal domains formed after 3.6 Ga depict a more complex evolution, involving contribution from chondritic mantle sources and, to a lesser extent, reworking of pre-existing crust. Protracted remelting was not accompanied by significant mantle depletion prior to 3.35 Ga. This implies that early crust production in the Zimbabwe Craton did not cause complementary enriched and depleted reservoirs that were tapped by later magmas, possibly because the volume of crust extracted and stabilised was too small to influence (asthenospheric) mantle isotopic evolution. Growth of continental crust through pulsed emplacement of juvenile (chondritic mantle-derived) melts, into and onto the existing cratonic nucleus, however, involved formation of complementary depleted subcontinental lithospheric mantle since the early Archaean, indicative of strongly coupled evolutionary histories of both reservoirs, with limited evidence for recycling and lateral

  11. Effect of Ga2O3 on the spectroscopic properties of erbium-doped boro-bismuth glasses.

    Science.gov (United States)

    Ling, Zhou; Ya-Xun, Zhou; Shi-Xun, Dai; Tie-Feng, Xu; Qiu-Hua, Nie; Xiang, Shen

    2007-11-01

    The spectroscopic properties and thermal stability of Er3+-doped Bi2O3-B2O3-Ga2O3 glasses are investigated experimentally. The effect of Ga2O3 content on absorption spectra, the Judd-Ofelt parameters Omega t (t=2, 4, 6), fluorescence spectra and the lifetimes of Er3+:4I 13/2 level are also investigated, and the stimulated emission cross-section is calculated from McCumber theory. With the increasing of Ga2O3 content in the glass composition, the Omega t (t=2, 4, 6) parameters, fluorescence full width at half maximum (FWHM) and the 4I 13/2 lifetimes of Er3+ first increase, reach its maximum at Ga2O3=8 mol.%, and then decrease. The results show that Er3+-doped 50Bi2O3-42B2O3-8Ga2O3 glass has the broadest FWHM (81nm) and large stimulated emission cross-section (1.03 x1 0(-20)cm2) in these glass samples. Compared with other glass hosts, the gain bandwidth properties of Er+3-doped Bi2O3-B2O3-Ga2O3 glass is better than tellurite, silicate, phosphate and germante glasses. In addition, the lifetime of 4I 13/2 level of Er(3+) in bismuth-based glass, compared with those in other glasses, is relative low due to the high-phonon energy of the B-O bond, the large refractive index of the host and the existence of OH* in the glass. At the same time, the glass thermal stability is improved in which the substitution of Ga2O3 for B2O3 strengthens the network structure. The suitability of bismuth-based glass as a host for a Er3+-doped broadband amplifier and its advantages over other glass hosts are also discussed.

  12. Real time observation of phase formations by XRD during Ga-rich or In-rich Cu(In, Ga)Se{sub 2} growth by co-evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Pistor, Paul; Zahedi-Azad, Setareh; Hartnauer, Stefan; Waegele, Leonard A.; Jarzembowski, Enrico; Scheer, Roland [Institute of Physics, Martin-Luther-University Halle-Wittenberg, Halle (Saale) (Germany)

    2015-09-15

    Solar cells with Cu(In, Ga)Se{sub 2} absorbers rely on the three-stage co-evaporation process with Cu-poor/Cu-rich/Cu-poor absorber deposition conditions for highest efficiency devices. During the three-stage process, the formation and evolution of different selenide phases with changing compositions throughout the process crucially determine the final absorber quality. In this contribution, we monitor the evolution of crystalline phases in real-time with an X-ray diffraction (XRD) line detector setup implemented into an evaporation setup. Using the common three-stage process, we prepare and compare samples covering the full alloying range from CuInSe{sub 2} to CuGaSe{sub 2}. The in situ XRD allows the detection of the crystalline phases present at all times of the process as well as an advanced analysis of the phase evolution through a closer look at peak shifts and the full width at half maximum. For samples with a Ga/(Ga + In) ratio (GGI) < 0.5, distinct phase transitions associated with the transition to the reported vacancy compounds Cu(In,Ga){sub 5}Se{sub 8} and Cu(In, Ga){sub 3}Se{sub 5} are observed. No such indication was found for samples with a GGI > 0.5. For Ga-rich Cu(In, Ga)Se{sub 2} phases with a GGI of 0.55, the XRD analysis evidenced a Ga-rich phase segregation before the stoichiometric point was reached. The above findings are discussed in view of their implication on wide gap solar cell performances. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. DETERMINATION OF VICKERS MICROHARDNESS IN β-Ga2O3 SINGLE CRYSTALS GROWN FROM THEIR OWN MELT

    Directory of Open Access Journals (Sweden)

    L. I. Guzilova

    2015-05-01

    Full Text Available The results of microhardness measurements of β-Ga2O3 single crystals for (001 crystallographic face are reported. The crystals were grown by the free crystallization with the "Garnet-2M" equipment. Microhardness values ​​ were determined by the Vickers method at varying loads. A four-sided diamond pyramid was used as an indenter. The average value of gallium oxide microhardness was equal to 8.91 GPa. We have carried out comparison of the values ​​obtained with the microhardness for the other wide bandgap semiconductors - epitaxial GaN layers grown on 6H-SiC and GaP layers grown on GaP:S. The findings are usable for machining process development of β-Ga2O3 single crystal substrates. In particular, silicon carbide and electrocorundum may be recommended for β-Ga2O3 machine processing.

  14. Grb2 and the non-T cell activation linker NTAL constitute a Ca(2+)-regulating signal circuit in B lymphocytes

    Czech Academy of Sciences Publication Activity Database

    Stork, B.; Engelke, M.; Frey, J.; Hořejší, Václav; Hamm-Baarke, A.; Schraven, B.; Kurosaki, T.; Wienands, J.

    2004-01-01

    Roč. 21, č. 5 (2004), s. 681-691 ISSN 1074-7613 R&D Projects: GA MŠk LN00A026 Institutional research plan: CEZ:AV0Z5052915 Keywords : NTAL * Grb2 * lymphocyte Subject RIV: EC - Immunology Impact factor: 15.448, year: 2004

  15. Formation of Ga2O3 by the oxidation of p-type GaN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pinnisch, Melanie; Reppin, Daniel; Stehr, Jan; Laufer, Andreas; Hofmann, Detlev M.; Meyer, Bruno K. [1. Physikalisches Institut, Justus-Liebig-University, Giessen (Germany)

    2010-07-01

    Both GaN and Ga{sub 2}O{sub 3} are wide band gap semiconductors with energies of 3.45 eV and 4.9 eV, respectively. While GaN can be achieved p- or n-type conducting by doping, Ga{sub 2}O{sub 3} is n-type or high resistive dependent on the presence of oxygen vacancies. We studied the conversion of p-type Mg doped GaN thin films to Ga{sub 2}O{sub 3} by thermal treatments in the temperature range from 600 C to 1200 C and in different atmospheres. Changes of the film properties were studied by means of X-ray diffraction, photo-electron spectroscopy and atomic force microscopy. Optical and magnetic resonance methods were used to investigate the evolution of the dopands and defects.

  16. High-pressure behavior of beta-Ga2O3 nanocrystals

    DEFF Research Database (Denmark)

    Wang, H.; He, Y.; Chen, W.

    2010-01-01

    that nanocrystalline monoclinic beta-Ga2O3 underwent a phase transition to rhombohedral alpha-Ga2O3. It was found that beta- to alpha-Ga2O3 transition began at about 13.6-16.4 GPa, and extended up to 39.2 GPa. At the highest pressure used, only alpha-Ga2O3 was present, which remained after pressure release. A Birch......-Murnaghan fit to the P-V data yielded a zero-pressure bulk modulus at fixed B-0(')=4: B-0=228(9) GPa and B-0=333(19) GPa for beta-Ga2O3 and alpha-Ga2O3 phases, respectively. We compared our results with bulk beta-Ga2O3, and concluded that the phase-transition pressure and bulk modulus of nanocrystalline beta...

  17. Neonatální imunitní podnět a psychóze podobné chování u dospělého potkana

    Czech Academy of Sciences Publication Activity Database

    Tejkalová, H.; Jelínek, F.; Klaschka, Jan; Koukolík, F.; Matěj, R.; Šťastný, František

    2006-01-01

    Roč. 10, Suppl. 3 (2006), s. 21-24 ISSN 1211-7579 R&D Projects: GA MŠk(CZ) 1M0517 Institutional research plan: CEZ:AV0Z10300504; CEZ:AV0Z50110509 Keywords : schizofrenie * animální model * lipopolysacharid * mikroglie * prepulzní inhibice Subject RIV: FL - Psychiatry, Sexuology

  18. Emission properties of Ga2O3 nano-flakes: effect of excitation density.

    Science.gov (United States)

    Pozina, G; Forsberg, M; Kaliteevski, M A; Hemmingsson, C

    2017-02-08

    In the quest of developing high performance electronic and optical devices and more cost effective fabrication processes of monoclinic β-Ga 2 O 3 , new growth techniques and fundamental electronic and optical properties of defects have to be explored. By heating of dissolved metallic Ga in HCl in a NH 3 and N 2 atmosphere, nano-flake films of monoclinic β-phase Ga 2 O 3 were grown as confirmed by XRD. From optical measurements, we observe two strong emissions. A red band peaking at ~2.0 eV and a UV band at ~3.8 eV. The band at ~2.0 eV is attributed to donor-acceptor pair recombination where the donor and acceptor level is suggested to be related to V O and nitrogen, respectively. By studying the dependence of the intensity of the UV band at 3.8 eV versus excitation density, a model is suggested. In the model, it is assumed that local potential fluctuations forming minima (maxima), where the carriers would be localized with a summarized band offset for conduction and valence band of 1 eV. The origin of the fluctuations is tentatively suggested to be related to micro-inclusions of different phases in the film.

  19. Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1−xFex)2O3 multilayer thin films

    Science.gov (United States)

    Guo, Daoyou; An, Yuehua; Cui, Wei; Zhi, Yusong; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Li, Peigang; Wu, Zhenping; Tang, Weihua

    2016-01-01

    Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1−xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe2+ and Fe3+ are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What’s more, the Ga2O3/(Ga1−xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3. PMID:27121446

  20. Effect of H, O intentionally doping on photoelectric properties in MOVPE-growth GaN layers

    KAUST Repository

    Ohkawa, Kazuhiro

    2017-10-24

    GaN crystal growth requires higher purity of materials. Some contaminants in NH3 gas could be the causal factor of defects in GaN crystals. These atoms act as donor or acceptor. In order to clearly demonstrate the effect of gaseous impurities such as H2O on the properties of undoped-GaN layer, high purity NH3 (N70) was used as NH3 source. The concentration of H2O in NH3 was varied at 32, 49, 75, 142, 266, 489, and 899 ppb, respectively. Under the same recipe, we deposited undoped-GaN epitaxial layer with purifier, and H2O-doped GaN series layers. As similar to the results of CO and CO2-doped GaN series, the increase tendency of carrier density changing with increasing H2O concentration. The FWHMs of XRC around (0002) remain stable, witnessing that the crystal quality of GaN layer remain good. LT (15K) PL of undoped-GaN and H2O-doped GaN were measured, the D0X emission peak intensity of all H2O-doped GaN are decreased drastically compared with undoped-GaN. H2O impurity was doped into GaN layer, which not only effects electrical properties and but also effects the radiative emission and furthermore effects PL intensity, its mechanism is discussed.