WorldWideScience

Sample records for semiconductors bulk cohesive

  1. Cohesion and device reliability in organic bulk heterojunction photovoltaic cells

    KAUST Repository

    Brand, Vitali; Bruner, Christopher; Dauskardt, Reinhold H.

    2012-01-01

    that the phase separated bulk heterojunction layer is the weakest layer and report quantitative cohesion values which ranged from ∼1 to 20 J m -2. The effects of layer thickness, composition, and annealing treatments on layer cohesion are investigated. Using

  2. Molecular Intercalation and Cohesion of Organic Bulk Heterojunction Photovoltaic Devices

    KAUST Repository

    Bruner, Christopher; Miller, Nichole C.; McGehee, Michael D.; Dauskardt, Reinhold H.

    2013-01-01

    The phase separated bulk heterojunction (BHJ) layer in BHJ polymer:fullerene organic photovoltaic devices (OPV) are mechanically weak with low values of cohesion. Improved cohesion is important for OPV device thermomechanical reliability. BHJ devices are investigated and how fullerene intercalation within the active layer affects cohesive properties in the BHJ is shown. The intercalation of fullerenes between the side chains of the polymers poly(3,3″′-didocecyl quaterthiophene) (PQT-12) and poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophene (pBTTT) is shown to enhance BHJ layer cohesion. Cohesion values range from ≈1 to 5 J m -2, depending on the polymer:fullerene blend, processing conditions, and composition. Devices with non-intercalated BHJ layers are found to have significantly reduced values of cohesion. The resulting device power conversion efficiencies (PCE) are also investigated and correlated with the device cohesion. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Molecular Intercalation and Cohesion of Organic Bulk Heterojunction Photovoltaic Devices

    KAUST Repository

    Bruner, Christopher

    2013-01-17

    The phase separated bulk heterojunction (BHJ) layer in BHJ polymer:fullerene organic photovoltaic devices (OPV) are mechanically weak with low values of cohesion. Improved cohesion is important for OPV device thermomechanical reliability. BHJ devices are investigated and how fullerene intercalation within the active layer affects cohesive properties in the BHJ is shown. The intercalation of fullerenes between the side chains of the polymers poly(3,3″′-didocecyl quaterthiophene) (PQT-12) and poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophene (pBTTT) is shown to enhance BHJ layer cohesion. Cohesion values range from ≈1 to 5 J m -2, depending on the polymer:fullerene blend, processing conditions, and composition. Devices with non-intercalated BHJ layers are found to have significantly reduced values of cohesion. The resulting device power conversion efficiencies (PCE) are also investigated and correlated with the device cohesion. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Cohesion and device reliability in organic bulk heterojunction photovoltaic cells

    KAUST Repository

    Brand, Vitali

    2012-04-01

    The fracture resistance of P3HT:PC 60BM-based photovoltaic devices are characterized using quantitative adhesion and cohesion metrologies that allow identification of the weakest layer or interface in the device structure. We demonstrate that the phase separated bulk heterojunction layer is the weakest layer and report quantitative cohesion values which ranged from ∼1 to 20 J m -2. The effects of layer thickness, composition, and annealing treatments on layer cohesion are investigated. Using depth profiling and X-ray photoelectron spectroscopy on the resulting fracture surfaces, we examine the gradient of molecular components through the thickness of the bulk heterojunction layer. Finally, using atomic force microscopy we show how the topography of the failure path is related to buckling of the metal electrode and how it develops with annealing. The research provides new insights on how the molecular design, structure and composition affect the cohesive properties of organic photovoltaics. © 2011 Elsevier B.V. All rights reserved.

  5. Estimation of Bulk modulus and microhardness of tetrahedral semiconductors

    International Nuclear Information System (INIS)

    Gorai, Sanjay Kumar

    2012-01-01

    A general empirical formula was found for calculating of bulk modulus (B) and microhardness (H) from electronegativity and principal quantum number of II-VI, III-V semiconductors. Constant C1, appearing the in the expression of bulk modulus and constants C2 and C3, appearing in the expression of microhardness and the exponent M have following values respectively The numerical values of C1,C2, C3 and M are respectively 206.6, 8.234, 1.291, -1.10 for II-VI 72.4, 31.87, 7.592, -0.95 for III-V semiconductors. Both electro-negativity and principal quantum number can effectively reflect on the chemical bonding behaviour of constituent atoms in these semiconductors. The calculated values of bulk modulus and microhardness are in good agreement with the reported values in the literature. Present study helps in designing novel semiconductor materials, and to further explore the mechanical properties of these semiconductors.

  6. Interlayer excitons in a bulk van der Waals semiconductor

    DEFF Research Database (Denmark)

    Arora, Ashish; Drueppel, Matthias; Schmidt, Robert

    2017-01-01

    Bound electron-hole pairs called excitons govern the electronic and optical response of many organic and inorganic semiconductors. Excitons with spatially displaced wave functions of electrons and holes (interlayer excitons) are important for Bose-Einstein condensation, superfluidity......, dissipationless current flow, and the light-induced exciton spin Hall effect. Here we report on the discovery of interlayer excitons in a bulk van der Waals semiconductor. They form due to strong localization and spin-valley coupling of charge carriers. By combining high-field magneto-reflectance experiments...

  7. Interlayer excitons in a bulk van der Waals semiconductor.

    Science.gov (United States)

    Arora, Ashish; Drüppel, Matthias; Schmidt, Robert; Deilmann, Thorsten; Schneider, Robert; Molas, Maciej R; Marauhn, Philipp; Michaelis de Vasconcellos, Steffen; Potemski, Marek; Rohlfing, Michael; Bratschitsch, Rudolf

    2017-09-21

    Bound electron-hole pairs called excitons govern the electronic and optical response of many organic and inorganic semiconductors. Excitons with spatially displaced wave functions of electrons and holes (interlayer excitons) are important for Bose-Einstein condensation, superfluidity, dissipationless current flow, and the light-induced exciton spin Hall effect. Here we report on the discovery of interlayer excitons in a bulk van der Waals semiconductor. They form due to strong localization and spin-valley coupling of charge carriers. By combining high-field magneto-reflectance experiments and ab initio calculations for 2H-MoTe 2 , we explain their salient features: the positive sign of the g-factor and the large diamagnetic shift. Our investigations solve the long-standing puzzle of positive g-factors in transition metal dichalcogenides, and pave the way for studying collective phenomena in these materials at elevated temperatures.Excitons, quasi-particles of bound electron-hole pairs, are at the core of the optoelectronic properties of layered transition metal dichalcogenides. Here, the authors unveil the presence of interlayer excitons in bulk van der Waals semiconductors, arising from strong localization and spin-valley coupling of charge carriers.

  8. Universal Curve of Optimum Thermoelectric Figures of Merit for Bulk and Low-Dimensional Semiconductors

    Science.gov (United States)

    Hung, Nguyen T.; Nugraha, Ahmad R. T.; Saito, Riichiro

    2018-02-01

    This paper is a contribution to the Physical Review Applied collection in memory of Mildred S. Dresselhaus. Analytical formulas for thermoelectric figures of merit and power factors are derived based on the one-band model. We find that there is a direct relationship between the optimum figures of merit and the optimum power factors of semiconductors despite of the fact that the two quantities are generally given by different values of chemical potentials. By introducing a dimensionless parameter consisting of the optimum power factor and lattice thermal conductivity (without electronic thermal conductivity), it is possible to unify optimum figures of merit of both bulk and low-dimensional semiconductors into a single universal curve that covers many materials with different dimensionalities.

  9. Growth of Bulk Wide Bandgap Semiconductor Crystals and Their Potential Applications

    Science.gov (United States)

    Chen, Kuo-Tong; Shi, Detang; Morgan, S. H.; Collins, W. Eugene; Burger, Arnold

    1997-01-01

    Developments in bulk crystal growth research for electro-optical devices in the Center for Photonic Materials and Devices since its establishment have been reviewed. Purification processes and single crystal growth systems employing physical vapor transport and Bridgman methods were assembled and used to produce high purity and superior quality wide bandgap materials such as heavy metal halides and II-VI compound semiconductors. Comprehensive material characterization techniques have been employed to reveal the optical, electrical and thermodynamic properties of crystals, and the results were used to establish improved material processing procedures. Postgrowth treatments such as passivation, oxidation, chemical etching and metal contacting during the X-ray and gamma-ray device fabrication process have also been investigated and low noise threshold with improved energy resolution has been achieved.

  10. Large enhancements of thermopower and carrier mobility in quantum dot engineered bulk semiconductors.

    Science.gov (United States)

    Liu, Yuanfeng; Sahoo, Pranati; Makongo, Julien P A; Zhou, Xiaoyuan; Kim, Sung-Joo; Chi, Hang; Uher, Ctirad; Pan, Xiaoqing; Poudeu, Pierre F P

    2013-05-22

    The thermopower (S) and electrical conductivity (σ) in conventional semiconductors are coupled adversely through the carriers' density (n) making it difficult to achieve meaningful simultaneous improvements in both electronic properties through doping and/or substitutional chemistry. Here, we demonstrate the effectiveness of coherently embedded full-Heusler (FH) quantum dots (QDs) in tailoring the density, mobility, and effective mass of charge carriers in the n-type Ti(0.1)Zr(0.9)NiSn half-Heusler matrix. We propose that the embedded FH QD forms a potential barrier at the interface with the matrix due to the offset of their conduction band minima. This potential barrier discriminates existing charge carriers from the conduction band of the matrix with respect to their relative energy leading to simultaneous large enhancements of the thermopower (up to 200%) and carrier mobility (up to 43%) of the resulting Ti(0.1)Zr(0.9)Ni(1+x)Sn nanocomposites. The improvement in S with increasing mole fraction of the FH-QDs arises from a drastic reduction (up to 250%) in the effective carrier density coupled with an increase in the carrier's effective mass (m*), whereas the surprising enhancement in the mobility (μ) is attributed to an increase in the carrier's relaxation time (τ). This strategy to manipulate the transport behavior of existing ensembles of charge carriers within a bulk semiconductor using QDs is very promising and could pave the way to a new generation of high figure of merit thermoelectric materials.

  11. Density functional theory study of bulk and single-layer magnetic semiconductor CrPS4

    Science.gov (United States)

    Zhuang, Houlong L.; Zhou, Jia

    2016-11-01

    Searching for two-dimensional (2D) materials with multifunctionality is one of the main goals of current research in 2D materials. Magnetism and semiconducting are certainly two desirable functional properties for a single 2D material. In line with this goal, here we report a density functional theory (DFT) study of bulk and single-layer magnetic semiconductor CrPS4. We find that the ground-state magnetic structure of bulk CrPS4 exhibits the A-type antiferromagnetic ordering, which transforms to ferromagnetic (FM) ordering in single-layer CrPS4. The calculated formation energy and phonon spectrum confirm the stability of single-layer CrPS4. The band gaps of FM single-layer CrPS4 calculated with a hybrid density functional are within the visible-light range. We also study the effects of FM ordering on the optical absorption spectra and band alignments for water splitting, indicating that single-layer CrPS4 could be a potential photocatalyst. Our work opens up ample opportunities of energy-related applications of single-layer CrPS4.

  12. Polycrystalline silicon ring resonator photodiodes in a bulk complementary metal-oxide-semiconductor process.

    Science.gov (United States)

    Mehta, Karan K; Orcutt, Jason S; Shainline, Jeffrey M; Tehar-Zahav, Ofer; Sternberg, Zvi; Meade, Roy; Popović, Miloš A; Ram, Rajeev J

    2014-02-15

    We present measurements on resonant photodetectors utilizing sub-bandgap absorption in polycrystalline silicon ring resonators, in which light is localized in the intrinsic region of a p+/p/i/n/n+ diode. The devices, operating both at λ=1280 and λ=1550  nm and fabricated in a complementary metal-oxide-semiconductor (CMOS) dynamic random-access memory emulation process, exhibit detection quantum efficiencies around 20% and few-gigahertz response bandwidths. We observe this performance at low reverse biases in the range of a few volts and in devices with dark currents below 50 pA at 10 V. These results demonstrate that such photodetector behavior, previously reported by Preston et al. [Opt. Lett. 36, 52 (2011)], is achievable in bulk CMOS processes, with significant improvements with respect to the previous work in quantum efficiency, dark current, linearity, bandwidth, and operating bias due to additional midlevel doping implants and different material deposition. The present work thus offers a robust realization of a fully CMOS-fabricated all-silicon photodetector functional across a wide wavelength range.

  13. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  14. Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

    International Nuclear Information System (INIS)

    Hu, Long; Su, Jiancang; Ding, Zhenjie; Hao, Qingsong; Yuan, Xuelin

    2014-01-01

    Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2 kV is applied, after an exciting optical pulse with energy of 1 μJ arrival, the structure with thickness of 650 μm reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (∼4 kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ∼4 kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed

  15. Impact of Molecular Orientation and Packing Density on Electronic Polarization in the Bulk and at Surfaces of Organic Semiconductors

    KAUST Repository

    Ryno, Sean

    2016-05-16

    The polarizable environment surrounding charge carriers in organic semiconductors impacts the efficiency of the charge transport process. Here, we consider two representative organic semiconductors, tetracene and rubrene, and evaluate their polarization energies in the bulk and at the organic-vacuum interface using a polarizable force field that accounts for induced-dipole and quadrupole interactions. Though both oligoacenes pack in a herringbone motif, the tetraphenyl substituents on the tetracene backbone of rubrene alter greatly the nature of the packing. The resulting change in relative orientations of neighboring molecules is found to reduce the bulk polarization energy of holes in rubrene by some 0.3 eV when compared to tetracene. The consideration of model organic-vacuum interfaces highlights the significant variation in the electrostatic environment for a charge carrier at a surface although the net change in polarization energy is small; interestingly, the environment of a charge even just one layer removed from the surface can be viewed already as representative of the bulk. Overall, it is found that in these herringbone-type layered crystals the polarization energy has a much stronger dependence on the intralayer packing density than interlayer packing density.

  16. Network cohesion

    OpenAIRE

    Cavalcanti, Tiago Vanderlei; Giannitsarou, Chrysi; Johnson, CR

    2017-01-01

    We define a measure of network cohesion and show how it arises naturally in a broad class of dynamic models of endogenous perpetual growth with network externalities. Via a standard growth model, we show why network cohesion is crucial for conditional convergence and explain that as cohesion increases, convergence is faster. We prove properties of network cohesion and define a network aggregator that preserves network cohesion.

  17. Modelling of the Flow of Streams of Cohesionless and Cohesive Bulk Materials in a Conveyor Discharge Point with a Flat Conveyor Belt

    Science.gov (United States)

    Cyganiuk, J. A.; Kuryło, P.

    2018-02-01

    The paper presents the analysis of flow conditions of cohesive and cohesionless bulk materials in a conveyor discharge point of a flat conveyor belt. The analysis was carried out for stationary flows at high velocities. It presents mathematical methods for the description of the velocity of a material leaving a throwing point of a flat conveyor belt as well as final equations which enable the determination of velocity of the material after it has left the throwing point (with the accuracy sufficient for practical use). Next, the velocity calculated for the proposed mathematical description (for selected material groups) has been compared with the velocity obtained from mathematical relations commonly used by engineers. The proposed equations for determining the velocity of the material beyond the point have proved useful, since they enable excluding the indirect equations. Finally, the difference between the values of the velocity obtained with the proposed and indirect equations have been determined and the relative error for the proposed method has been calculated.

  18. Ultrafast dynamics in semiconductor optical amplifiers and all-optical processing: Bulk versus quantum dot devices

    DEFF Research Database (Denmark)

    Mørk, Jesper; Berg, Tommy Winther; Magnúsdóttir, Ingibjörg

    2003-01-01

    We discuss the dynamical properties of semiconductor optical amplifiers and the importance for all-optical signal processing. In particular, the dynamics of quantum dot amplifiers is considered and it is suggested that these may be operated at very high bit-rates without significant patterning...

  19. Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

    Science.gov (United States)

    Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.

    2015-06-01

    A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the "CVBs interaction" that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.

  20. Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

    International Nuclear Information System (INIS)

    Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.

    2015-01-01

    A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the “CVBs interaction” that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices

  1. Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A. [Integrated Systems Laboratory ETH Zürich, Gloriastrasse 35, 8092 Zürich (Switzerland)

    2015-06-21

    A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the “CVBs interaction” that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.

  2. Network cohesion

    OpenAIRE

    Cavalcanti, Tiago V. V.; Giannitsarou, Chryssi; Johnson, Charles R.

    2016-01-01

    This is the final version of the article. It first appeared from Springer via http://dx.doi.org/10.1007/s00199-016-0992-1 We define a measure of network cohesion and show how it arises naturally in a broad class of dynamic models of endogenous perpetual growth with network externalities. Via a standard growth model, we show why network cohesion is crucial for conditional convergence and explain that as cohesion increases, convergence is faster. We prove properties of network cohesion and d...

  3. Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl)

    International Nuclear Information System (INIS)

    Moreschini, L.; Autès, G.; Crepaldi, A.; Moser, S.; Johannsen, J.C.; Kim, K.S.; Berger, H.; Bugnon, Ph.; Magrez, A.; Denlinger, J.; Rotenberg, E.; Bostwick, A.; Yazyev, O.V.

    2015-01-01

    Highlights: • We provide an ARPES comparison between the three tellurohalides BiTeX (X = I, Br, Cl). • They present a similar band structure with namely spin-split bulk and surface states. • They offer, except for BiTeCl, the possibility of ambipolar conduction. • They can be easily doped. • From the data appeared so far, BiTeBr may be the most appealing for applications. - Abstract: We present an overview of the new family of semiconductors BiTeX (X = I, Br, Cl) from the perspective of angle resolved photoemission spectroscopy. The strong band bending occurring at the surface potentially endows them with a large flexibility, as they are capable of hosting both hole and electron conduction, and can be modified by inclusion or adsorption of foreign atoms. In addition, their trigonal crystal structure lacks a center of symmetry and allows for both bulk and surface spin-split bands at the Fermi level. We elucidate analogies and differences among the three materials, also in the light of recent theoretical and experimental work

  4. Semiconductor-diode-aided dosimetry of the irradiation of pourable bulk material

    International Nuclear Information System (INIS)

    Gruenewald, T.; Rudolf, M.

    1987-01-01

    The irradiation of unpackaged pourable bulk material requires the employment of a dosimeter which can be readily transported along with the material. Planar diffused silicon diodes have been found to be suitable for this purpose. To date these have been used solely for the purpose of dose rate measurements; however, it can be shown that the permanent change in reverse recover time at the p-n junction correlates with the absorbed irradiation dose in the range up to 10 kGy. Appropriate selection of the diode and thermal treatment lead to a linear dependence and enable the silicon dosimeter to be reused. (author). 16 refs, 4 figs

  5. Impact of Molecular Orientation and Packing Density on Electronic Polarization in the Bulk and at Surfaces of Organic Semiconductors

    KAUST Repository

    Ryno, Sean; Risko, Chad; Bredas, Jean-Luc

    2016-01-01

    The polarizable environment surrounding charge carriers in organic semiconductors impacts the efficiency of the charge transport process. Here, we consider two representative organic semiconductors, tetracene and rubrene, and evaluate

  6. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  7. Li(Zn,Co,MnAs: A bulk form diluted magnetic semiconductor with Co and Mn co-doping at Zn sites

    Directory of Open Access Journals (Sweden)

    Bijuan Chen

    2016-11-01

    Full Text Available We report the synthesis and characterization of a series of bulk forms of diluted magnetic semiconductors Li(Zn1-x-yCoxMnyAs with a crystal structure close to that of III-V diluted magnetic semiconductor (Ga,MnAs. No ferromagnetic order occurs with single (Zn,Co or (Zn, Mn substitution in the parent compound LiZnAs. Only with co-doped Co and Mn ferromagnetic ordering can occur at the Curie temperature ∼40 K. The maximum saturation moment of the this system reached to 2.17μB/Mn, which is comparable to that of Li (Zn,MnAs. It is the first time that a diluted magnetic semiconductor with co-doping Co and Mn into Zn sites is achieved in “111” LiZnAs system, which could be utilized to investigate the basic science of ferromagnetism in diluted magnetic semiconductors. In addition, ferromagnetic Li(Zn,Co,MnAs, antiferromagnetic LiMnAs, and superconducting LiFeAs share square lattice at As layers, which may enable the development of novel heterojunction devices in the future.

  8. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-06-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

  9. Quasi-Phase Diagrams at Air/Oil Interfaces and Bulk Oil Phases for Crystallization of Small-Molecular Semiconductors by Adjusting Gibbs Adsorption.

    Science.gov (United States)

    Watanabe, Satoshi; Ohta, Takahisa; Urata, Ryota; Sato, Tetsuya; Takaishi, Kazuto; Uchiyama, Masanobu; Aoyama, Tetsuya; Kunitake, Masashi

    2017-09-12

    The temperature and concentration dependencies of the crystallization of two small-molecular semiconductors were clarified by constructing quasi-phase diagrams at air/oil interfaces and in bulk oil phases. A quinoidal quaterthiophene derivative with four alkyl chains (QQT(CN)4) in 1,1,2,2-tetrachroloethane (TCE) and a thienoacene derivative with two alkyl chains (C8-BTBT) in o-dichlorobenzene were used. The apparent crystal nucleation temperature (T n ) and dissolution temperature (T d ) of the molecules were determined based on optical microscopy examination in closed glass capillaries and open dishes during slow cooling and heating processes, respectively. T n and T d were considered estimates of the critical temperatures for nuclear formation and crystal growth, respectively. The T n values of QQT(CN)4 and C8-BTBT at the air/oil interfaces were higher than those in the bulk oil phases, whereas the T d values at the air/oil interfaces were almost the same as those in the bulk oil phases. These Gibbs adsorption phenomena were attributed to the solvophobic effect of the alkyl chain moieties. The temperature range between T n and T d corresponds to suitable supercooling conditions for ideal crystal growth based on the suppression of nucleation. The T n values at the water/oil and oil/glass interfaces did not shift compared with those of the bulk phases, indicating that adsorption did not occur at the hydrophilic interfaces. Promotion and inhibition of nuclear formation for crystal growth of the semiconductors were achieved at the air/oil and hydrophilic interfaces, respectively.

  10. Transport Imaging of Spatial Distribution of Mobility-Lifetime (Micro Tau) Product in Bulk Semiconductors for Nuclear Radiation Detection

    Science.gov (United States)

    2012-06-01

    reproducibility for currents of 3×10-10 A, and 6×10-10 A. An operating current of 1×10-10 A shows higher variations in the distribution beginning at...York: John Wiley & Sons, 2000. [21] A. Owens and A. Peacock , “Compound semiconductor radiation detectors,” Nucl. Instr. and Meth. A, vol. 531, pp. 18...A. G. Kozorezov, J. K. Wigmore, A. Owens, R. den Hartog, A. Peacock , and H. A. Al-Jawari, “Resolution degradation of semiconductor detectors due to

  11. Towards a Cohesive Theory of Cohesion

    Directory of Open Access Journals (Sweden)

    Janet McLeod

    2013-12-01

    Full Text Available Conventional wisdom suggests that group cohesion is strongly related to performance. This may be based on the notion that better cohesion leads to the sharing of group goals. However, empirical and meta-analytic studies have been unable to consistently demonstrate a relationship between cohesion and performance. Partially, this problem could be attributed to the disagreement on the precise definition of cohesion and its components. Further, when the cohesion construct is evaluated under Cohen’s Cumulative Research Program (CRP, it is surprisingly found to belong to the category of early-to-intermediate stage of theory development. Therefore, a thorough re-examination of the cohesion construct is essential to advance our understanding of the cohesion-productivity relationship. We propose a qualitative approach because it will help establish the definitions, enable us to better test our theories about cohesion and its moderators, and provide insights into how best to enlist cohesion to improve team performance.

  12. Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics

    Science.gov (United States)

    Wei, Xixiong; Deng, Wanling; Fang, Jielin; Ma, Xiaoyu; Huang, Junkai

    2017-10-01

    A physical-based straightforward extraction technique for interface and bulk density of states in metal oxide semiconductor thin film transistors (TFTs) is proposed by using the capacitance-voltage (C-V) characteristics. The interface trap density distribution with energy has been extracted from the analysis of capacitance-voltage characteristics. Using the obtained interface state distribution, the bulk trap density has been determined. With this method, for the interface trap density, it is found that deep state density nearing the mid-gap is approximately constant and tail states density increases exponentially with energy; for the bulk trap density, it is a superposition of exponential deep states and exponential tail states. The validity of the extraction is verified by comparisons with the measured current-voltage (I-V) characteristics and the simulation results by the technology computer-aided design (TCAD) model. This extraction method uses non-numerical iteration which is simple, fast and accurate. Therefore, it is very useful for TFT device characterization.

  13. A Comparison of the Valence Band Structure of Bulk and Epitaxial GeTe-based Diluted Magnetic Semiconductors

    International Nuclear Information System (INIS)

    Pietrzyk, M.A.; Kowalski, B.J.; Orlowski, B.A.; Knoff, W.; Story, T.; Dobrowolski, W.; Slynko, V.E.; Slynko, E.I.; Johnson, R.L.

    2010-01-01

    In this work we present a comparison of the experimental results, which have been obtained by the resonant photoelectron spectroscopy for a set of selected diluted magnetic semiconductors based on GeTe, doped with manganese. The photoemission spectra are acquired for the photon energy range of 40-60 eV, corresponding to the Mn 3p → 3d resonances. The spectral features related to Mn 3d states are revealed in the emission from the valence band. The Mn 3d states contribution manifests itself in the whole valence band with a maximum at the binding energy of 3.8 eV. (authors)

  14. Enhanced infrared magneto-optical response of the nonmagnetic semiconductor BiTeI driven by bulk Rashba splitting

    Energy Technology Data Exchange (ETDEWEB)

    Demko, L.; Tokura, Y. [Multiferroics Project, ERATO, JST, c/o Department of Applied Physics, University of Tokyo (Japan); Schober, G.A.H. [Institute for Theoretical Physics, University of Heidelberg (Germany); Kocsis, V.; Kezsmarki, I. [Department of Physics, Budapest University of Technology and Economics and Condensed Matter Research Group of the Hungarian Academy of Sciences (Hungary); Bahramy, M.S.; Murakawa, H. [CMRG and CERG, RIKEN ASI (Japan); Lee, J.S.; Arita, R.; Nagaosa, N. [Department of Applied Physics, University of Tokyo (Japan)

    2013-07-01

    We study the magneto-optical (MO) response of the polar semiconducting BiTeI with giant bulk Rashba spin splitting at various carrier densities. Despite being nonmagnetic, the material is found to yield a huge MO activity in the infrared region under moderate magnetic fields (up to 3 T). Our first-principles calculations show that the enhanced MO response of BiTeI comes mainly from the intraband transitions between the Rashba-split bulk conduction bands. These transitions connecting electronic states with opposite spin directions become active due to the presence of strong spin-orbit interaction and give rise to distinct features in the MO spectra with a systematic doping dependence. We predict an even more pronounced enhancement in the low-energy MO response and dc Hall effect near the crossing (Dirac) point of the conduction bands.

  15. The use of bulk states to accelerate the band edge state calculation of a semiconductor quantum dot

    International Nuclear Information System (INIS)

    Voemel, Christof; Tomov, Stanimire Z.; Wang, Lin-Wang; Marques, Osni A.; Dongarra, Jack J.

    2007-01-01

    We present a new technique to accelerate the convergence of the folded spectrum method in empirical pseudopotential band edge state calculations for colloidal quantum dots. We use bulk band states of the materials constituent of the quantum dot to construct initial vectors and a preconditioner. We apply these to accelerate the convergence of the folded spectrum method for the interior states at the top of the valence and the bottom of the conduction band. For large CdSe quantum dots, the number of iteration steps until convergence decreases by about a factor of 4 compared to previous calculations

  16. Bulk Crystal Growth, and High-Resolution X-ray Diffraction Results of LiZnAs Semiconductor Material

    Science.gov (United States)

    Montag, Benjamin W.; Reichenberger, Michael A.; Sunder, Madhana; Ugorowski, Philip B.; Nelson, Kyle A.; Henson, Luke C.; McGregor, Douglas S.

    2017-08-01

    LiZnAs is being explored as a candidate for solid-state neutron detectors. The compact form, solid-state device would have greater efficiency than present day gas-filled 3He and 10BF3 detectors. Devices fabricated from LiZnAs having either natural Li (nominally 7.5% 6Li) or enriched 6Li (usually 95% 6Li) as constituent atoms may provide a material for compact high efficiency neutron detectors. The 6Li( n, t)4He reaction yields a total Q-value of 4.78 MeV, an energy larger than that of the 10B reaction, which can easily be identified above background radiations. LiZnAs material was synthesized by preparing equimolar portions of Li, Zn, and As sealed under vacuum (10-6 Torr) in quartz ampoules lined with boron nitride and subsequently reacted in a compounding furnace (Montag et al. in J Cryst Growth 412:103, 2015). The raw synthesized LiZnAs was purified by a static vacuum sublimation in quartz (Montag et al. in J Cryst Growth 438:99, 2016). Bulk crystalline LiZnAs ingots were grown from the purified material with a high-temperature Bridgman-style growth process described here. One of the largest LiZnAs ingots harvested was 9.6 mm in diameter and 4.2 mm in length. Samples were harvested from the ingot and were characterized for crystallinity using a Bruker AXS Inc. D8 AXS Inc. D2 CRYSO, energy dispersive x-ray diffractometer, and a Bruker AXS Inc. D8 DISCOVER, high-resolution x-ray diffractometer equipped with molybdenum radiation, Gobel mirror, four bounce germanium monochromator and a scintillation detector. The primary beam divergence was determined to be 0.004°, using a single crystal Si standard. The x-ray based characterization revealed that the samples nucleated in the (110) direction and a high-resolution open detector rocking curve recorded on the (220) LiZnAs yielded a full width at half maximum (FWHM) of 0.235°. Sectional pole figures using off-axis reflections of the (211) LiZnAs confirmed in-plane ordering, and also indicated the presence of multiple

  17. The drift-diffusion interpretation of the electron current within the organic semiconductor characterized by the bulk single energy trap level

    Science.gov (United States)

    Cvikl, B.

    2010-01-01

    The closed solution for the internal electric field and the total charge density derived in the drift-diffusion approximation for the model of a single layer organic semiconductor structure characterized by the bulk shallow single trap-charge energy level is presented. The solutions for two examples of electric field boundary conditions are tested on room temperature current density-voltage data of the electron conducting aluminum/tris(8-hydroxyquinoline aluminum/calcium structure [W. Brütting et al., Synth. Met. 122, 99 (2001)] for which jexp∝Va3.4, within the interval of bias 0.4 V≤Va≤7. In each case investigated the apparent electron mobility determined at given bias is distributed within a given, finite interval of values. The bias dependence of the logarithm of their lower limit, i.e., their minimum values, is found to be in each case, to a good approximation, proportional to the square root of the applied electric field. On account of the bias dependence as incorporated in the minimum value of the apparent electron mobility the spatial distribution of the organic bulk electric field as well as the total charge density turn out to be bias independent. The first case investigated is based on the boundary condition of zero electric field at the electron injection interface. It is shown that for minimum valued apparent mobilities, the strong but finite accumulation of electrons close to the anode is obtained, which characterize the inverted space charge limited current (SCLC) effect. The second example refers to the internal electric field allowing for self-adjustment of its boundary values. The total electron charge density is than found typically to be of U shape, which may, depending on the parameters, peak at both or at either Alq3 boundary. It is this example in which the proper SCLC effect is consequently predicted. In each of the above two cases, the calculations predict the minimum values of the electron apparent mobility, which substantially

  18. Scour in cohesive soils

    Science.gov (United States)

    2015-05-01

    This study of scour in cohesive soils had two objectives. The first was to introduce and demonstrate a new ex situ erosion testing device (ESTD) that can mimic the near-bed flow of open channels to erode cohesive soils within a specified range of she...

  19. Dynamics of Cohesive Sediments

    DEFF Research Database (Denmark)

    Johansen, Claus

    The present thesis considers the transport processes of cohesive sediments. The cohesive sediment used in the laboratory experiments was kaolinite, a clay mineral, in order to be able to reproduce the individual experiments. In the first part of the thesis, the theoretical considerations regarding...

  20. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  1. Observation of core-level binding energy shifts between (100) surface and bulk atoms of epitaxial CuInSe{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Nelson, A.J. [Colorado School of Mines, Golden, CO (United States); Berry, G.; Rockett, A. [Univ. of Illinois, Urbana-Champaign, IL (United States)] [and others

    1997-04-01

    Core-level and valence band photoemission from semiconductors has been shown to exhibit binding energy differences between surface atoms and bulk atoms, thus allowing one to unambiguously distinguish between the two atomic positions. Quite clearly, surface atoms experience a potential different from the bulk due to the lower coordination number - a characteristic feature of any surface is the incomplete atomic coordination. Theoretical accounts of this phenomena are well documented in the literature for III-V and II-VI semiconductors. However, surface state energies corresponding to the equilibrium geometry of (100) and (111) surfaces of Cu-based ternary chalcopyrite semiconductors have not been calculated or experimental determined. These compounds are generating great interest for optoelectronic and photovoltaic applications, and are an isoelectronic analog of the II-VI binary compound semiconductors. Surface core-level binding energy shifts depend on the surface cohesive energies, and surface cohesive energies are related to surface structure. For ternary compound semiconductor surfaces, such as CuInSe{sub 2}, one has the possibility of variations in surface stoichiometry. Applying standard thermodynamical calculations which consider the number of individual surface atoms and their respective chemical potentials should allow one to qualitatively determine the magnitude of surface core-level shifts and, consequently, surface state energies.

  2. Observation of core-level binding energy shifts between (100) surface and bulk atoms of epitaxial CuInSe2

    International Nuclear Information System (INIS)

    Nelson, A.J.; Berry, G.; Rockett, A.

    1997-01-01

    Core-level and valence band photoemission from semiconductors has been shown to exhibit binding energy differences between surface atoms and bulk atoms, thus allowing one to unambiguously distinguish between the two atomic positions. Quite clearly, surface atoms experience a potential different from the bulk due to the lower coordination number - a characteristic feature of any surface is the incomplete atomic coordination. Theoretical accounts of this phenomena are well documented in the literature for III-V and II-VI semiconductors. However, surface state energies corresponding to the equilibrium geometry of (100) and (111) surfaces of Cu-based ternary chalcopyrite semiconductors have not been calculated or experimental determined. These compounds are generating great interest for optoelectronic and photovoltaic applications, and are an isoelectronic analog of the II-VI binary compound semiconductors. Surface core-level binding energy shifts depend on the surface cohesive energies, and surface cohesive energies are related to surface structure. For ternary compound semiconductor surfaces, such as CuInSe 2 , one has the possibility of variations in surface stoichiometry. Applying standard thermodynamical calculations which consider the number of individual surface atoms and their respective chemical potentials should allow one to qualitatively determine the magnitude of surface core-level shifts and, consequently, surface state energies

  3. Binding Energy, Vapor Pressure and Melting Point of Semiconductor Nanoparticles

    International Nuclear Information System (INIS)

    H. H. Farrell; C. D. Van Siclen

    2007-01-01

    Current models for the cohesive energy of nanoparticles generally predict a linear dependence on the inverse particle diameter for spherical clusters, or, equivalently, on the inverse of the cube root of the number of atoms in the cluster. Although this is generally true for metals, we find that for the group IV semiconductors, C, Si and Ge, this linear dependence does not hold. Instead, using first principles, density functional theory calculations to calculate the binding energy of these materials, we find a quadratic dependence on the inverse of the particle size. Similar results have also been obtained for the metallic group IV elements Sn and Pb. This is in direct contradiction to current assumptions. Further, as a consequence of this quadratic behavior, the vapor pressure of semiconductor nanoparticles rises more slowly with decreasing size than would be expected. In addition, the melting point of these nanoparticles will experience less suppression than experienced by metal nanoparticles with comparable bulk binding energies. This non-linearity also affects sintering or Ostwald ripening behavior of these nanoparticles as well as other physical properties that depend on the nanoparticle binding energy. The reason for this variation in size dependence involves the covalent nature of the bonding in semiconductors, and even in the 'poor' metals. Therefore, it is expected that this result will hold for compound semiconductors as well as the elemental semiconductors

  4. The Structure of Group Cohesion.

    Science.gov (United States)

    Cota, Albert A.; And Others

    1995-01-01

    Reviews the literature on unidimensional and multidimensional models of cohesion and describes cohesion as a multidimensional construct with primary and secondary dimensions. Found that primary dimensions described the cohesiveness of all or most types of groups, whereas secondary dimensions only described the cohesiveness of specific types of…

  5. Mining the bulk positron lifetime

    International Nuclear Information System (INIS)

    Aourag, H.; Guittom, A.

    2009-01-01

    We introduce a new approach to investigate the bulk positron lifetimes of new systems based on data-mining techniques. Through data mining of bulk positron lifetimes, we demonstrate the ability to predict the positron lifetimes of new semiconductors on the basis of available semiconductor data already studied. Informatics techniques have been applied to bulk positron lifetimes for different tetrahedrally bounded semiconductors in order to discover computational design rules. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Young, Chadwin D.; Bersuker, Gennadi; Hussain, Muhammad Mustafa

    2015-01-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard

  7. Influence of phonons on semiconductor quantum emission

    Energy Technology Data Exchange (ETDEWEB)

    Feldtmann, Thomas

    2009-07-06

    A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semiconductor systems is presented. The theory is applied to study quantum dots and phonon-assisted luminescence in bulk semiconductors and heterostructures. (orig.)

  8. Fatigue damage modeling in solder interconnects using a cohesive zone approach

    NARCIS (Netherlands)

    Abdul-Baqi, A.J.J.; Schreurs, P.J.G.; Geers, M.G.D.

    2005-01-01

    The objective of this work is to model the fatigue damage process in a solder bump subjected to cyclic loading conditions. Fatigue damage is simulated using the cohesive zone methodology. Damage is assumed to occur at interfaces modeled through cohesive zones in the material, while the bulk material

  9. A Molecular-Scale Understanding of Cohesion and Fracture in P3HT:Fullerene Blends

    KAUST Repository

    Tummala, Naga Rajesh; Bruner, Christopher; Risko, Chad; Bredas, Jean-Luc; Dauskardt, Reinhold H.

    2015-01-01

    mechanical flexibility, reliability, and lifetime. Here, the molecular mechanism for the initiation of cohesive failure in bulk heterojunction (BHJ) OPV active layers derived from the semiconducting polymer poly-(3-hexylthiophene) [P3HT] and two mono

  10. Bulk Heterojunction Solar Cells Based on Blends of Conjugated Polymers with II–VI and IV–VI Inorganic Semiconductor Quantum Dots

    Directory of Open Access Journals (Sweden)

    Ryan Kisslinger

    2017-01-01

    Full Text Available Bulk heterojunction solar cells based on blends of quantum dots and conjugated polymers are a promising configuration for obtaining high-efficiency, cheaply fabricated solution-processed photovoltaic devices. Such devices are of significant interest as they have the potential to leverage the advantages of both types of materials, such as the high mobility, band gap tunability and possibility of multiple exciton generation in quantum dots together with the high mechanical flexibility and large molar extinction coefficient of conjugated polymers. Despite these advantages, the power conversion efficiency (PCE of these hybrid devices has remained relatively low at around 6%, well behind that of all-organic or all-inorganic solar cells. This is attributed to major challenges that still need to be overcome before conjugated polymer–quantum dot blends can be considered viable for commercial application, such as controlling the film morphology and interfacial structure to ensure efficient charge transfer and charge transport. In this work, we present our findings with respect to the recent development of bulk heterojunctions made from conjugated polymer–quantum dot blends, list the ongoing strategies being attempted to improve performance, and highlight the key areas of research that need to be pursued to further develop this technology.

  11. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  12. Competition and social cohesion

    Directory of Open Access Journals (Sweden)

    Mario Libertini

    2014-03-01

    Full Text Available "Competition" and "social cohesion" are both protected by E.U. and Italian laws. The author moves from the analysis of the meaning of these two concepts, in order to reflect on their compatibility and the way to conciliate them. The central problem - in the opinion of the Author - is to abandon the myth of spontaneous markets' order and to rebuild a political order able to maintain and support, as far as possible, the competitive market economy, but also to govern economic processes in critical moments and situations.

  13. Leadership, cohesion and groupthink

    Directory of Open Access Journals (Sweden)

    Iurchevici Iulia

    2016-09-01

    Full Text Available The Groupthink Phenomenon refers to the tendency of the members of a group to reach solidarity and cohesion, the trend that makes to bypass any questions which would lead to disputes. In such cases, if the members expect counter-arguments regarding a certain issue, they avoid to raise the matter. If it is believed that a question cannot be answered – it isn’t asked. Originally, Janis the author of the term, explains this process through the environment that has been established within groups that are in the leading position, but later, puts a strong emphasis towards the tendency to maintain the unanimity of the decision of the group. As preceding conditions of this decision-making process are listed the following: the high cohesion of the group, its isolation from other external sources of information, the lack of an impartial leadership, lack of appropriate legal framework and procedures in the decision - making process, and also “homogeneity of members, background and their ideology”. The Groupthink is manifested by: Illusion of Invulnerability, Collective Rationalization, Illusion of morality, Out – Group Stereotypes, Strong pressures towards conformism, Self – Censorship, Illusions of unanimity, and the presence of “Mind Guards”. In order to understand the decisions of a group, it is important that some analysis of Groupthink to be done, because in this way, can be controlled or eliminated the communicational distortion that occurs at a time among members forming these groups.

  14. Characterization of cohesive powders for bulk handling and DEM modelling

    NARCIS (Netherlands)

    Thakur, S.C.; Imole, Olukayode Isaiah; Wojtkowski, Mateusz Bronislaw; Magnanimo, Vanessa; Montes, E.C.; Ramaioli, Marco; Ahmadian, H.; Ooi, J.Y.; Bischoff, M.; Ramm, E.; Onate, E; Owen, R.; Wriggers, P.

    2013-01-01

    The flow behaviour of granular materials is relevant for many industrial applications including the pharmaceutical, chemical, consumer goods and food industries. A key issue is the accurate characterisation of these powders under different loading conditions and flow regimes, for example in mixers,

  15. Immigration, social cohesion, and naturalization

    DEFF Research Database (Denmark)

    Lægaard, Sune

    2010-01-01

    social trust do not connect with issues of naturalization at all. Other conceptions of social cohesion are either politically controversial, problematic as part of the justification of stricter naturalization requirements, or in fact justify less demanding naturalization requirements....

  16. Developing Indicators of Territorial Cohesion

    DEFF Research Database (Denmark)

    Gallina, Andrea; Farrugia, Nadia

    setting. The concept of territorial cohesion attaches importance to the diversity of the European territory which is seen as a key competitive advantage, the preservation of the European social model, and the ability of the citizens of Europe's nations and regions to be able to continue to live within...... (EU). The objective of territorial cohesion, which builds on the European Spatial Development Perspective (ESDP), is to help achieve a more balanced development by reducing existing disparities, avoiding territorial imbalances and by making sectoral policies, which have a spatial impact and regional...... policy more coherent. It also aims to improve territorial integration and encourage cooperation between regions. Territorial cohesion complements the notions of economic and social cohesion by translating the fundamental EU goal of a balanced competitiveness and sustainable development into a territorial...

  17. Multiple intersecting cohesive discontinuities in 3D reservoir geomechanics

    OpenAIRE

    Das, K. C.; Sandha, S.S.; Carol, Ignacio; Vargas, P.E.; Gonzalez, Nubia Aurora; Rodrigues, E.; Segura Segarra, José María; Lakshmikantha, Ramasesha Mookanahallipatna; Mello,, U.

    2013-01-01

    Reservoir Geomechanics is playing an increasingly important role in developing and producing hydrocarbon reserves. One of the main challenges in reservoir modeling is accurate and efficient simulation of arbitrary intersecting faults. In this paper, we propose a new formulation to model multiple intersecting cohesive discontinuities (faults) in reservoirs using the XFEM framework. This formulation involves construction of enrichment functions and computation of stiffness sub-matrices for bulk...

  18. Cohesive granular media modelization with non-convex particles shape: Application to UO2 powder compaction

    International Nuclear Information System (INIS)

    Saint-Cyr, B.

    2011-01-01

    We model in this work granular materials composed of non-convex and cohesive aggregates, in view of application to the rheology of UO 2 powders. The effect of non convexity is analyzed in terms of bulk quantities (Coulomb internal friction and cohesion) and micromechanical parameters such as texture anisotropy and force transmission. In particular, we find that the packing fraction evolves in a complex manner with the shape non convexity and the shear strength increases but saturates due to interlocking between the aggregates. We introduce simple models to describe these features in terms of micro-mechanical parameters. Furthermore, a systematic investigation of shearing, uniaxial compaction and simple compression of cohesive packings show that bulk cohesion increases with non-convexity but is strongly influenced by the boundary conditions and shear bands or stress concentration. (author) [fr

  19. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  20. Relationship between the cohesion of guest particles on the flow behaviour of interactive mixtures.

    Science.gov (United States)

    Mangal, Sharad; Gengenbach, Thomas; Millington-Smith, Doug; Armstrong, Brian; Morton, David A V; Larson, Ian

    2016-05-01

    In this study, we aimed to investigate the effects cohesion of small surface-engineered guest binder particles on the flow behaviour of interactive mixtures. Polyvinylpyrrolidone (PVP) - a model pharmaceutical binder - was spray-dried with varying l-leucine feed concentrations to create small surface-engineered binder particles with varying cohesion. These spray-dried formulations were characterised by their particle size distribution, morphology and cohesion. Interactive mixtures were produced by blending these spray-dried formulations with paracetamol. The resultant blends were visualised under scanning electron microscope to confirm formation of interactive mixtures. Surface coverage of paracetamol by guest particles as well as the flow behaviour of these mixtures were examined. The flow performance of interactive mixtures was evaluated using measurements of conditioned bulk density, basic flowability energy, aeration energy and compressibility. With higher feed l-leucine concentrations, the surface roughness of small binder particles increased, while their cohesion decreased. Visual inspection of the SEM images of the blends indicated that the guest particles adhered to the surface of paracetamol resulting in effective formation of interactive mixtures. These images also showed that the low-cohesion guest particles were better de-agglomerated that consequently formed a more homogeneous interactive mixture with paracetamol compared with high-cohesion formulations. The flow performance of interactive mixtures changed as a function of the cohesion of the guest particles. Interactive mixtures with low-cohesion guest binder particles showed notably improved bulk flow performance compared with those containing high-cohesion guest binder particles. Thus, our study suggests that the cohesion of guest particles dictates the flow performance of interactive mixtures. Crown Copyright © 2016. Published by Elsevier B.V. All rights reserved.

  1. Forms of cohesion in confinement institutions

    Directory of Open Access Journals (Sweden)

    Ekaterina D. Slobodenyuk

    2015-12-01

    Full Text Available Objective to identify the diversity of cohesion forms in confinement institutions. Methods qualitative analyses based on indepth semistructured interviews. Results the study included adaptation of Western methodologies of the cohesion phenomenon analysis to the Russian reality and operationalization of the moral bases of group cohesion. This served as the bases for designing a guide for indepth semistructured interviews 10 interviews were conducted with people recently released from general and strict regime colonies. Content analysis of the interviews revealed a number of structural sections that demonstrate the diversity of cohesion forms alongside with one that is most meaningful to the prisoners and therefore the most well perceived and articulated by respondents. Analysis of the latter allowed to identify a set of groups showing different degree and nature of cohesion. By the degree of cohesion one can identify the poorly cohesive groups quotloutsquot moderately cohesive quotredsquot quotthievesquot and highly cohesive quotfightersquot. By the nature of cohesion in the prisonersrsquo community there are both groups united on the basis of social morality quotredsquot quotthievesquot and groups demonstrating a high degree of cohesion based on the social justice morality quotfightersquot. A detailed analysis of the latter group also showed that the cohesion can have both traits of morality social justice and features of social order moral. Scientific novelty using the sociopsychological theory of the moral motives in determining the bases of cohesion. Practical significance the research results can be applied for the development of sociopsychological techniques for the penal system reform.

  2. Second harmonic spectroscopy of semiconductor nanostructures

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Yu, Ping; Bozhevolnyi, Sergey I.

    1999-01-01

    Semiconductor nanostructures and their application to optoelectronic devices have attracted much attention recently. Lower-dimensional structures, and in particular quantum dots, are highly anisotropic resulting in broken symmetry as compared to their bulk counterparts. This is not only reflected...

  3. Auto consolidated cohesive sediments erosion

    International Nuclear Information System (INIS)

    Ternat, F.

    2007-02-01

    Pollutants and suspended matters of a river can accumulate into the sedimentary column. Once deposited, they are submitted to self-weight consolidation processes, ageing and burying, leading to an increase of their erosion resistance. Pollutant fluxes can be related to sedimentary fluxes, determined by threshold laws. In this work, an erosion threshold model is suggested by introducing a cohesion force into the usual force balance. A model of cohesion is developed on the basis of interactions between argillaceous cohesive particles (clays), particularly the Van der Waals force, whose parameterization is ensured by means of granulometry and porosity. Artificial erosion experiments were performed in a recirculating erosion flume with natural cored sediments where critical shear stress measurements were performed. Other analyses provided granulometry and porosity. The results obtained constitute a good database for the literature. The model is then applied to the experimental conditions and gives good agreement with measurements. An example of the accounting for self-weight consolidation processes is finally suggested, before finishing on a Mohr like diagram dedicated to soft cohesive sediment erosion. (author)

  4. Flocculation Dynamics of cohesive sediment

    NARCIS (Netherlands)

    Maggi, F.

    2005-01-01

    Cohesive sediment suspended in natural waters is subject not only to transport and deposition processes but also to reactions of flocculation, \\textit{i.e.} aggregation of fine particles, and breakup of aggregates. Although aggregation and breakup occur at small and very small length scales compared

  5. Psychological characteristics of group cohesion athletes.

    OpenAIRE

    Sheriff Sarhan

    2011-01-01

    The basic components of group cohesion in sport teams. An analysis of publications on cohesion within the groups where an interconnection of individual goals of each participant group with common goals and the end result of teamwork. The concept of harmony in the team sports, where the rate of group cohesion is dependent on such integrative index as psychological climate. It is established that a number of athletes to achieve high results require high cohesion, unity, value-normative orientat...

  6. GeAs and SiAs monolayers: Novel 2D semiconductors with suitable band structures

    Science.gov (United States)

    Zhou, Liqin; Guo, Yu; Zhao, Jijun

    2018-01-01

    Two dimensional (2D) materials provide a versatile platform for nanoelectronics, optoelectronics and clean energy conversion. Based on first-principles calculations, we propose a novel kind of 2D materials - GeAs and SiAs monolayers and investigate their atomic structure, thermodynamic stability, and electronic properties. The calculations show that monolayer GeAs and SiAs sheets are energetically and dynamically stable. Their small interlayer cohesion energies (0.191 eV/atom for GeAs and 0.178 eV/atom for SiAs) suggest easy exfoliation from the bulk solids that exist in nature. As 2D semiconductors, GeAs and SiAs monolayers possess band gap of 2.06 eV and 2.50 eV from HSE06 calculations, respectively, while their band gap can be further engineered by the number of layers. The relatively small and anisotropic carrier effective masses imply fast electric transport in these 2D semiconductors. In particular, monolayer SiAs is a direct gap semiconductor and a potential photocatalyst for water splitting. These theoretical results shine light on utilization of monolayer or few-layer GeAs and SiAs materials for the next-generation 2D electronics and optoelectronics with high performance and satisfactory stability.

  7. Rotational Failure of Rubble-pile Bodies: Influences of Shear and Cohesive Strengths

    Science.gov (United States)

    Zhang, Yun; Richardson, Derek C.; Barnouin, Olivier S.; Michel, Patrick; Schwartz, Stephen R.; Ballouz, Ronald-Louis

    2018-04-01

    The shear and cohesive strengths of a rubble-pile asteroid could influence the critical spin at which the body fails and its subsequent evolution. We present results using a soft-sphere discrete element method to explore the mechanical properties and dynamical behaviors of self-gravitating rubble piles experiencing increasing rotational centrifugal forces. A comprehensive contact model incorporating translational and rotational friction and van der Waals cohesive interactions is developed to simulate rubble-pile asteroids. It is observed that the critical spin depends strongly on both the frictional and cohesive forces between particles in contact; however, the failure behaviors only show dependence on the cohesive force. As cohesion increases, the deformation of the simulated body prior to disruption is diminished, the disruption process is more abrupt, and the component size of the fissioned material is increased. When the cohesive strength is high enough, the body can disaggregate into similar-size fragments, which could be a plausible mechanism to form asteroid pairs or active asteroids. The size distribution and velocity dispersion of the fragments in high-cohesion simulations show similarities to the disintegrating asteroid P/2013 R3, indicating that this asteroid may possess comparable cohesion in its structure and experience rotational fission in a similar manner. Additionally, we propose a method for estimating a rubble pile’s friction angle and bulk cohesion from spin-up numerical experiments, which provides the opportunity for making quantitative comparisons with continuum theory. The results show that the present technique has great potential for predicting the behaviors and estimating the material strengths of cohesive rubble-pile asteroids.

  8. A Molecular-Scale Understanding of Cohesion and Fracture in P3HT:Fullerene Blends

    KAUST Repository

    Tummala, Naga Rajesh

    2015-04-21

    Quantifying cohesion and understanding fracture phenomena in thin-film electronic devices are necessary for improved materials design and processing criteria. For organic photovoltaics (OPVs), the cohesion of the photoactive layer portends its mechanical flexibility, reliability, and lifetime. Here, the molecular mechanism for the initiation of cohesive failure in bulk heterojunction (BHJ) OPV active layers derived from the semiconducting polymer poly-(3-hexylthiophene) [P3HT] and two mono-substituted fullerenes is examined experimentally and through molecular-dynamics simulations. The results detail how, under identical conditions, cohesion significantly changes due to minor variations in the fullerene adduct functionality, an important materials consideration that needs to be taken into account across fields where soluble fullerene derivatives are used.

  9. Ultrafast Degenerate Transient Lens Spectroscopy in Semiconductor Nanosctructures

    Directory of Open Access Journals (Sweden)

    Leontyev A.V.

    2015-01-01

    Full Text Available We report the non-resonant excitation and probing of the nonlinear refractive index change in bulk semiconductors and semiconductor quantum dots through degenerate transient lens spectroscopy. The signal oscillates at the center laser field frequency, and the envelope of the former in quantum dots is distinctly different from the one in bulk sample. We discuss the applicability of this technique for polarization state probing in semiconductor media with femtosecond temporal resolution.

  10. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  11. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  12. Porous and Nanoporous Semiconductors and Emerging Applications

    Directory of Open Access Journals (Sweden)

    Helmut Föll

    2006-01-01

    Full Text Available Pores in single-crystalline semiconductors can be produced in a wide range of geometries and morphologies, including the “nanometer” regime. Porous semiconductors may have properties completely different from the bulk, and metamaterials with, for example, optical properties not encountered in natural materials are emerging. Possible applications of porous semiconductors include various novel sensors, but also more “exotic” uses as, for example, high explosives or electrodes for micro-fuel cells. The paper briefly reviews pore formation (including more applied aspects of large area etching, properties of porous semiconductors, and emerging applications.

  13. Cohesion Policy Contributing to Territorial Cohesion – Future Scenarios

    Directory of Open Access Journals (Sweden)

    Andreas Faludi

    2011-09-01

    Full Text Available The Barca Report advocates for developmental policies to be ‘place-based’: integrated as far as they affect ‘places’. The debate on territorial cohesion is equally concerned with integrating relevant policies and actions. This requires well-established democratic institutions and adequate responses to the demands of technical systems and of markets. Following Lisbeth Hooghe and Gary Marks, the respective arrangements are described as Governance Type I and Type II. All levels of government, including that of the EU, partake in both types, but relations between them are problematic, particularly in the context of Europe 2020: Will this EU strategy be mainly a matter for Directorate-Generals and their various clients pursuing their policies (Governance Type II, or will Cohesion policy, with its more integrated and decentralised approach, involving many levels of government and stakeholders (Governance Type I form platforms for integrating them? This paper presents four scenarios; each based on a combination of strong/weak Governance Type I and Type II, which are labelled as the ‘Anglo-Saxon’, ‘Saint-Simonian’, ‘Rhineland’ and the ‘European’ Scenarios. The authors prefer the latter, but the best one can hope for in the short term is for this option not to fall by the wayside.

  14. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  15. Team cohesion and team success in sport.

    Science.gov (United States)

    Carron, Albert V; Bray, Steven R; Eys, Mark A

    2002-02-01

    The main aim of this study was to examine the relationship between task cohesiveness and team success in elite teams using composite team estimates of cohesion. A secondary aim was to determine statistically the consistency (i.e. 'groupness') present in team members' perceptions of cohesion. Elite university basketball teams (n = 18) and club soccer teams (n = 9) were assessed for cohesiveness and winning percentages. Measures were recorded towards the end of each team's competitive season. Our results indicate that cohesiveness is a shared perception, thereby providing statistical support for the use of composite team scores. Further analyses indicated a strong relationship between cohesion and success (r = 0.55-0.67). Further research using multi-level statistical techniques is recommended.

  16. Influence of magnetic cohesion on the stability of granular slopes.

    Science.gov (United States)

    Taylor, K; King, P J; Swift, Michael R

    2008-09-01

    We use a molecular dynamics model to simulate the formation and evolution of a granular pile in two dimensions in order to gain a better understanding of the role of magnetic interactions in avalanche dynamics. We find that the angle of repose increases only slowly with magnetic field; the increase in angle is small even for intergrain cohesive forces many times stronger than gravity. The magnetic forces within the bulk of the pile partially cancel as a result of the anisotropic nature of the dipole-dipole interaction between grains. However, we show that this cancellation effect is not sufficiently strong to explain the discrepancy between the angle of repose in wet systems and magnetically cohesive systems. In our simulations we observe shearing deep within the pile, and we argue that it is this motion that prevents the angle of repose from increasing dramatically. We also investigate different implementations of friction with the front and back walls of the container, and conclude that the nature of the friction dramatically affects the influence of magnetic cohesion on the angle of repose.

  17. Sustaining exercise participation through group cohesion.

    Science.gov (United States)

    Estabrooks, P A

    2000-04-01

    The general hypothesis to be examined by this article is that increased group cohesion leads to an increase in adherence to an exercise program over time. Although preliminary research is promising, there is a need for further research aimed at examining the model of group development in exercise classes, the impact of group cohesion on both group and individual exercise behavior, and the measurement of group cohesion.

  18. Assessing Software Quality Through Visualised Cohesion Metrics

    Directory of Open Access Journals (Sweden)

    Timothy Shih

    2001-05-01

    Full Text Available Cohesion is one of the most important factors for software quality as well as maintainability, reliability and reusability. Module cohesion is defined as a quality attribute that seeks for measuring the singleness of the purpose of a module. The module of poor quality can be a serious obstacle to the system quality. In order to design a good software quality, software managers and engineers need to introduce cohesion metrics to measure and produce desirable software. A highly cohesion software is thought to be a desirable constructing. In this paper, we propose a function-oriented cohesion metrics based on the analysis of live variables, live span and the visualization of processing element dependency graph. We give six typical cohesion examples to be measured as our experiments and justification. Therefore, a well-defined, well-normalized, well-visualized and well-experimented cohesion metrics is proposed to indicate and thus enhance software cohesion strength. Furthermore, this cohesion metrics can be easily incorporated with software CASE tool to help software engineers to improve software quality.

  19. Psychological characteristics of group cohesion athletes.

    Directory of Open Access Journals (Sweden)

    Sheriff Sarhan

    2011-07-01

    Full Text Available The basic components of group cohesion in sport teams. An analysis of publications on cohesion within the groups where an interconnection of individual goals of each participant group with common goals and the end result of teamwork. The concept of harmony in the team sports, where the rate of group cohesion is dependent on such integrative index as psychological climate. It is established that a number of athletes to achieve high results require high cohesion, unity, value-normative orientation, deep identification and responsibility for the results of the joint group activities.

  20. Regions and the Territorial Cohesion

    Directory of Open Access Journals (Sweden)

    Ioan Ianos

    2013-08-01

    Full Text Available Territorial cohesion is an important target of European Union, constantly promoted by its institutions and their representatives. In the context of the Europe 2020 strategy, one of the most important support documents, the region represents a very important issue, being considered to be the key to its successfulness. The region is seen as a support for the smart growth and all the operational policy concepts try to make use of the spatial potential, by taking better account of the territorial specificities. Two main questions play attention: the need to transform the present-day developmental regions into administrative ones is a priority? What kind of regionalization it must to be promoted? Correlating these issues with already defined territorial cohesion, the administrative region is a real tool for the future territorial development. The experience of the last 14 years asks urgently the building of a new territorial administrative reform, giving competences to regions. For instant, each development region is a construction resulted from a free association of the counties. Their role in the regional development is much reduced one, because their regional councils are not elected; decisions taken at this level are consultative for the social, economical, cultural or political actors.

  1. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  2. Pseudopotentials for calculating the bulk and surface properties of solids

    International Nuclear Information System (INIS)

    Cohen, M.L.

    1983-01-01

    A survey is presented describing research in condensed matter physics using pseudopotentials to calculate electronic, structural, and vibrational properties of solids. Semiconductors are emphasized, and both bulk and surface calculations are discussed. (author) [pt

  3. Simulation study of the discharge characteristics of silos with cohesive particles

    Science.gov (United States)

    Hund, David; Weis, Dominik; Hesse, Robert; Antonyuk, Sergiy

    2017-06-01

    In many industrial applications the silo for bulk materials is an important part of an overall process. Silos are used for instance to buffer intermediate products to ensure a continuous supply for the next process step. This study deals with the discharging behaviour of silos containing cohesive bulk solids with particle sizes in the range of 100-500 μm. In this contribution the TOMAS [1,2] model developed for stationary and non-stationary discharging of a convergent hopper is verified with experiments and simulations using the Discrete Element Method. Moreover the influence of the cohesion of the bulk solids on the discharge behaviour is analysed by the simulation. The simulation results showed a qualitative agreement with the analytical model of TOMAS.

  4. Why are Rich Countries more Politically Cohesive?

    DEFF Research Database (Denmark)

    Dalgaard, Carl-Johan Lars; Olsson, Ola

    of other groups in society. If the gains from specialization become sufficiently large, however, a market economy will emerge. From being essentially non-cohesive under self-sufficiency, the political decision making process becomes cohesive in the market economy, as the welfare of individuals...

  5. Education and Social Cohesion: Higher Education

    Science.gov (United States)

    Moiseyenko, Olena

    2005-01-01

    Social cohesion is understood as the social networks and the norms of reciprocity and trustworthiness that arise from connections among individuals. When students attend higher education institutions, they go through a process of socialization, and it is vital to ensure that they acquire the core values that underpin the social cohesion. This…

  6. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  7. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  8. Transfer and Cohesion in Interdisciplinary Education

    Directory of Open Access Journals (Sweden)

    Søren Harnow Klausen

    2014-06-01

    Full Text Available One of the great challenges of interdisciplinary education is to create sufficient cohesion between disciplines. It is suggested that cohesion depends on the transfer of knowledge (in a broad sense, which includes skill and competences among the disciplines involved. Some of the most characteristic types of such transfer are identified and analyzed: Transfer of factual knowledge, theories, methods, models, skills, modes of collaboration and organization, meta-competences, disciplinary self-consciousness, problem selection, framework construction and motivation. Though some of these types of transfer may have a greater or smaller potential for creating cohesion, different kinds of cohesion may serve different interests, and there is no reason to assume that e.g. joint problem solving or theoretical integration should be more conducive to cohesion than e.g. contributions to motivation or disciplinary self-consciousness.

  9. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  10. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  11. Density functional study of the group II phosphide semiconductor compounds under hydrostatic pressure

    Energy Technology Data Exchange (ETDEWEB)

    Mokhtari, Ali [Simulation Laboratory, Department of Physics, Faculty of Science, Shahrekord University, PB 115, Shahrekord (Iran, Islamic Republic of)], E-mail: mokhtari@sci.sku.ac.ir

    2008-04-02

    The full-potential all-electron linearized augmented plane wave plus local orbital (FP-LAPW+lo) method, as implemented in the suite of software WIEN2k, has been used to systematically investigate the structural and electronic properties of the group II phosphide semiconductor compounds M{sub 3}P{sub 2} (M = Be, Mg and Ca). The exchange-correlation functional was approximated as a generalized gradient functional introduced by Perdew-Burke-Ernzerhof (GGA96) and Engel-Vosko (EV-GGA). Internal parameters were optimized by relaxing the atomic positions in the force directions using the Hellman-Feynman approach. The structural parameters, bulk modules, cohesive energy, band structures and density of states have been calculated and compared to the available experimental and theoretical results. These compounds are predicted to be semiconductors with the direct band gap of about 1.60, 2.55 and 2.62 eV for Be{sub 3}P{sub 2}, Mg{sub 3}P{sub 2} and Ca{sub 3}P{sub 2}, respectively. The effects of hydrostatic pressure on the behavior of band parameters such as band gap, valence bandwidths and anti-symmetric gap (the energy gap between two parts of the valence bands) are investigated using both GGA96 and EV-GGA. The contribution of s, p and d orbitals of different atoms to the density of states is discussed in detail.

  12. Density functional study of the group II phosphide semiconductor compounds under hydrostatic pressure

    International Nuclear Information System (INIS)

    Mokhtari, Ali

    2008-01-01

    The full-potential all-electron linearized augmented plane wave plus local orbital (FP-LAPW+lo) method, as implemented in the suite of software WIEN2k, has been used to systematically investigate the structural and electronic properties of the group II phosphide semiconductor compounds M 3 P 2 (M = Be, Mg and Ca). The exchange-correlation functional was approximated as a generalized gradient functional introduced by Perdew-Burke-Ernzerhof (GGA96) and Engel-Vosko (EV-GGA). Internal parameters were optimized by relaxing the atomic positions in the force directions using the Hellman-Feynman approach. The structural parameters, bulk modules, cohesive energy, band structures and density of states have been calculated and compared to the available experimental and theoretical results. These compounds are predicted to be semiconductors with the direct band gap of about 1.60, 2.55 and 2.62 eV for Be 3 P 2 , Mg 3 P 2 and Ca 3 P 2 , respectively. The effects of hydrostatic pressure on the behavior of band parameters such as band gap, valence bandwidths and anti-symmetric gap (the energy gap between two parts of the valence bands) are investigated using both GGA96 and EV-GGA. The contribution of s, p and d orbitals of different atoms to the density of states is discussed in detail

  13. Gain and Index Dynamics in Semiconductor Lasers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    Semiconductor optical amplifiers (SOAs) provide ultrafast, i.e. broadband components for optical communication systems. They enter not only as signal generators and amplifiers, but also as nonlinear elements for ultrafast signal processing such as wavelength conversion, switching, and regeneration...... changed character from bulk semiconductor to quantum wells and most recently to quantum dots. By quantum confinement of the carriers, the light-matter interactions can be significantly modified and the optical properties, including dynamics, can be engineered to match the required functionalities...

  14. Neighborhood cohesion, neighborhood disorder, and cardiometabolic risk.

    Science.gov (United States)

    Robinette, Jennifer W; Charles, Susan T; Gruenewald, Tara L

    2018-02-01

    Perceptions of neighborhood disorder (trash, vandalism) and cohesion (neighbors trust one another) are related to residents' health. Affective and behavioral factors have been identified, but often in studies using geographically select samples. We use a nationally representative sample (n = 9032) of United States older adults from the Health and Retirement Study to examine cardiometabolic risk in relation to perceptions of neighborhood cohesion and disorder. Lower cohesion is significantly related to greater cardiometabolic risk in 2006/2008 and predicts greater risk four years later (2010/2012). The longitudinal relation is partially accounted for by anxiety and physical activity. Copyright © 2017 Elsevier Ltd. All rights reserved.

  15. Natural disasters and indicators of social cohesion.

    Science.gov (United States)

    Calo-Blanco, Aitor; Kovářík, Jaromír; Mengel, Friederike; Romero, José Gabriel

    2017-01-01

    Do adversarial environmental conditions create social cohesion? We provide new answers to this question by exploiting spatial and temporal variation in exposure to earthquakes across Chile. Using a variety of methods and controlling for a number of socio-economic variables, we find that exposure to earthquakes has a positive effect on several indicators of social cohesion. Social cohesion increases after a big earthquake and slowly erodes in periods where environmental conditions are less adverse. Our results contribute to the current debate on whether and how environmental conditions shape formal and informal institutions.

  16. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

    2002-01-01

    -power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

  17. Coulombic Fluids Bulk and Interfaces

    CERN Document Server

    Freyland, Werner

    2011-01-01

    Ionic liquids have attracted considerable interest in recent years. In this book the bulk and interfacial physico-chemical characteristics of various fluid systems dominated by Coulomb interactions are treated which includes molten salts, ionic liquids as well as metal-molten salt mixtures and expanded fluid metals. Of particular interest is the comparison of the different systems. Topics in the bulk phase concern the microscopic structure, the phase behaviour and critical phenomena, and the metal-nonmetal transition. Interfacial phenomena include wetting transitions, electrowetting, surface freezing, and the electrified ionic liquid/ electrode interface. With regard to the latter 2D and 3D electrochemical phase formation of metals and semi-conductors on the nanometer scale is described for a number of selected examples. The basic concepts and various experimental methods are introduced making the book suitable for both graduate students and researchers interested in Coulombic fluids.

  18. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  19. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  20. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  1. Quantum theory of the optical and electronic properties of semiconductors

    CERN Document Server

    Haug, Hartmut

    2009-01-01

    This invaluable textbook presents the basic elements needed to understand and research into semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. Fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, the optical Stark effect, the semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz-Keldysh effects, are covered. The material is presented in sufficient detail for graduate students and researchers with a general background in quantum mechanics.This fifth edition includes an additional chapter on 'Quantum Optical Effects' where the theory of quantum optical effects in semiconductors is detailed. Besides deriving the 'semiconductor luminescence equations' and the expression for the stationary luminescence spectrum, the resu...

  2. Justice and Social Cohesion: Some conservative perspectives

    DEFF Research Database (Denmark)

    Pedersen, Søren Hviid

    2011-01-01

    In the wake of recent debates on multiculturalism and value-pluralism, the pressing questions now focuses on whether social cohesion and the notion of justice are sustainable and can be upheld, at least from a European perspective. There are many theoretical and academic responses, mainly from...... liberals, on how to accommodate the different demands of various ethnic and religious groups and at the same time sustain a minimum of social cohesion and justice. One voice is missing and that is a conservative perspective. The purpose of this paper is to formulate a modern conservative analysis...... of this problem. The argument presented in this paper will, first, take its point of departure from David Hume’s notion of sympathy and how this makes social cohesion possible. Second, it will be argued that social cohesion is a prerequisite for the existence of justice, and therefore justice is a derivative...

  3. Cohesion in a Multinational Coalition Center

    National Research Council Canada - National Science Library

    Schaab, Brooke

    2007-01-01

    .... All of the remaining nine items fell within the agree-to-strongly agree area. On interpersonal cohesion, highest agreement was found on items addressing the importance of liking and socializing with team members...

  4. Social cohesion and integration: Learning active citizenship

    NARCIS (Netherlands)

    Jansen, T.J.M.; Chioncel, N.E.; Dekkers, H.P.J.M.

    2006-01-01

    This article starts from a conceptual clarification of the notions social integration and social cohesion as a prerequisite for the reorientation of citizenship education. Turning away from uncritically reproduced assumptions represented in mainstream `deficiency discourse', the article first

  5. Emerging technologies, innovative teachers and moral cohesion

    CSIR Research Space (South Africa)

    Batchelor, J

    2012-05-01

    Full Text Available efficacy when they engage with emerging technologies. The concept of moral cohesion is further expanded and forms the main focus of this article. Keywords: emerging technologies, innovative teachers, moral cohesion, pedagogies, ethics, teacher.... African Renaissance and teacher disposition is identified as the strongest drivers. Teacher training forms the link between the strong drivers and the outcomes manifest as Stewardship and ethical considerations. 3.2 Professional Burden The theme...

  6. Investigating Some Technical Issues on Cohesive Zone Modeling of Fracture

    Science.gov (United States)

    Wang, John T.

    2011-01-01

    This study investigates some technical issues related to the use of cohesive zone models (CZMs) in modeling fracture processes. These issues include: why cohesive laws of different shapes can produce similar fracture predictions; under what conditions CZM predictions have a high degree of agreement with linear elastic fracture mechanics (LEFM) analysis results; when the shape of cohesive laws becomes important in the fracture predictions; and why the opening profile along the cohesive zone length needs to be accurately predicted. Two cohesive models were used in this study to address these technical issues. They are the linear softening cohesive model and the Dugdale perfectly plastic cohesive model. Each cohesive model constitutes five cohesive laws of different maximum tractions. All cohesive laws have the same cohesive work rate (CWR) which is defined by the area under the traction-separation curve. The effects of the maximum traction on the cohesive zone length and the critical remote applied stress are investigated for both models. For a CZM to predict a fracture load similar to that obtained by an LEFM analysis, the cohesive zone length needs to be much smaller than the crack length, which reflects the small scale yielding condition requirement for LEFM analysis to be valid. For large-scale cohesive zone cases, the predicted critical remote applied stresses depend on the shape of cohesive models used and can significantly deviate from LEFM results. Furthermore, this study also reveals the importance of accurately predicting the cohesive zone profile in determining the critical remote applied load.

  7. Group cohesion, task performance, and the experimenter expectancy effect.

    NARCIS (Netherlands)

    Hoogstraten, J.; Vorst, H.C.M.

    1978-01-01

    Studied the effects of cohesion on task fulfillment and explored the influence of task fulfillment on the initial level of cohesion. Within 4-person groups of undergraduates, cohesion was manipulated successfully by a triple procedure. The level of cohesion was ascertained directly after the

  8. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  9. A Study on the Effect of Cohesive Laws on Finite Element Analysis of Crack Propagation Using Cohesive Elements

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Hyeongseok; Baek, Hyungchan; Kim, Hyungyu [Seoul Nat' l Univ. of Sci. and Tech., Seoul (Korea, Republic of)

    2014-04-15

    In this paper, the effect of cohesive laws on the finite element analysis of crack propagation using cohesive elements is investigated through three-point bending and double cantilever beam problems. The cohesive elements are implemented into ABAQUS/Standard user subroutines(UEL), and the shape of cohesive law is varied by changing parameters in polynomial functions of cohesive traction-separation relations. In particular, crack propagation behaviors are studied by comparing load-displacement curves of the analysis models which have different shapes of cohesive laws with the same values of fracture energy and cohesive strength. Furthermore, the influence of the element size on crack propagation is discussed in this study.

  10. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  11. 4. Ukrainian Scientific Conference on Semiconductor Physics (USCPS - 4). Part 2. Abstracts

    International Nuclear Information System (INIS)

    Machulin, V.F.

    2009-01-01

    The materials reflect the content of the conference papers, in which the novel results, state and perspectives of research in the field of semiconductor physics, electronic or phonon phenomena on the surface and in bulk semiconductors, nano- and quantum dimensional structures, physics of modern solid state devices, semiconductor materials and technologies are presented.

  12. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  13. INTANGIBLE ASSETS THROUGH THE COHESION POLICY

    Directory of Open Access Journals (Sweden)

    Popescu (Stingaciu Ana-Maria

    2012-07-01

    Full Text Available INTANGIBLE ASSETS THROUGH THE COHESION POLICY Roth Anne-Marie-Monika West University of Timisoara Faculty of Economics and Business Administration Popescu (Stingaciu Ana-Maria West University of Timisoara Faculty of Economics and Business Administration Intangible assets in general and intellectual capital in particular are important to both society and organizations. It can be a source of competitive advantage for business and stimulate innovation that leads to wealth generation. Technological revolutions, the rise of the knowledge-based economy and the networked society have all led to the same conclusion that intangibles and how they contribute to value creation have to be appreciated so that the appropriate decisions can be made to protect and enhance them. The Cohesion Policy represents the main EU measure to ensure a balanced and sustainable growth in Europe by promoting harmonious development and reducing the regional disparities. The general objective of the paper is to highlight the important role of the Cohesion Policy in the development of intangible assets. The objectives and the instruments of the Cohesion Policy are designed to support programs on regional development, economic change, enhanced competitiveness and territorial cooperation through the European Union, to develop human resources and employability. Keywords: intangible assets, intellectual capital, Cohesion policy, development; JEL Classification: O43, G32, D24, O34

  14. Cohesion and Hierarchy in Physically Abusive Families

    Directory of Open Access Journals (Sweden)

    Clarissa De Antoni

    2009-06-01

    Full Text Available This paper investigates cohesion (emotional bonding and hierarchy (powerstructure in families with abuse against their children. Twenty low-incomefamilies participated. Father, mother and child’s perspective of family relations(cohesion and hierarchy were evaluated by the Family System Test(FAST. The relationship between father-child, mother-child, couple, andamong siblings were evaluated at typical and conflictive situations. Resultsshow a significance regarding to cohesion in typical and conflictive situationfor father-child and mother-child dyads in all perspectives (by father, mother,and child. There is no significant differences regarding to hierarchy. Theseresults suggest that the families see the intrafamilial violence as a constant,since they cannot differentiate between both situations.

  15. Anisotropy in cohesive, frictional granular media

    International Nuclear Information System (INIS)

    Luding, Stefan

    2005-01-01

    The modelling of cohesive, frictional granular materials with a discrete particle molecular dynamics is reviewed. From the structure of the quasi-static granular solid, the fabric, stress, and stiffness tensors are determined, including both normal and tangential forces. The influence of the material properties on the flow behaviour is also reported, including relations between the microscopic attractive force and the macroscopic cohesion as well as the dependence of the macroscopic friction on the microscopic contact friction coefficient. Related to the dynamics, the anisotropy of both structure and stress are exponentially approaching the maximum

  16. Mixed Mode cohesive law with interface dilatation

    DEFF Research Database (Denmark)

    Sørensen, Bent F.; Goutianos, Stergios

    2014-01-01

    displacements. As the crack faces displace relatively to each other, the roughness asperities ride on top of each other and result in an opening (dilatation) in the normal direction. Furthermore, the interaction of the crack surfaces in the contact zone gives rise to compressive normal stresses and frictional...... shear stresses opposing the crack face displacements. A phenomenological Mixed Mode cohesive zone law, derived from a potential function, is developed to describe the above mentioned fracture behaviour under monotonic opening. The interface dilatation introduces two new lengths. The cohesive law...

  17. Adsorption induced losses in interfacial cohesion

    International Nuclear Information System (INIS)

    Asaro, R.J.

    1977-07-01

    A model for interfacial cohesion is developed which describes the loss in the strength of an interface due to the segregation and adsorption of impurities on it. Distinctions are made between interface separations that occur too rapidly for any significant redistribution of adsorbing matter to take place and separations that are slow enough to allow full adsorption equilibrium. Expressions for the total work of complete decohesion are presented for both cases. The results are applied to well-known model adsorption isotherms and some experimental data for grain boundary adsorption of phosphorus in iron is analyzed with respect to the losses in intergranular cohesion

  18. Spectroscopic analysis of optoelectronic semiconductors

    CERN Document Server

    Jimenez, Juan

    2016-01-01

    This book deals with standard spectroscopic techniques which can be used to analyze semiconductor samples or devices, in both, bulk, micrometer and submicrometer scale. The book aims helping experimental physicists and engineers to choose the right analytical spectroscopic technique in order to get specific information about their specific demands. For this purpose, the techniques including technical details such as apparatus and probed sample region are described. More important, also the expected outcome from experiments is provided. This involves also the link to theory, that is not subject of this book, and the link to current experimental results in the literature which are presented in a review-like style. Many special spectroscopic techniques are introduced and their relationship to the standard techniques is revealed. Thus the book works also as a type of guide or reference book for people researching in optical spectroscopy of semiconductors.

  19. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  20. Solid-state NMR of inorganic semiconductors.

    Science.gov (United States)

    Yesinowski, James P

    2012-01-01

    Studies of inorganic semiconductors by solid-state NMR vary widely in terms of the nature of the samples investigated, the techniques employed to observe the NMR signal, and the types of information obtained. Compared with the NMR of diamagnetic non-semiconducting substances, important differences often result from the presence of electron or hole carriers that are the hallmark of semiconductors, and whose theoretical interpretation can be involved. This review aims to provide a broad perspective on the topic for the non-expert by providing: (1) a basic introduction to semiconductor physical concepts relevant to NMR, including common crystal structures and the various methods of making samples; (2) discussions of the NMR spin Hamiltonian, details of some of the NMR techniques and strategies used to make measurements and theoretically predict NMR parameters, and examples of how each of the terms in the Hamiltonian has provided useful information in bulk semiconductors; (3) a discussion of the additional considerations needed to interpret the NMR of nanoscale semiconductors, with selected examples. The area of semiconductor NMR is being revitalized by this interest in nanoscale semiconductors, the great improvements in NMR detection sensitivity and resolution that have occurred, and the current interest in optical pumping and spintronics-related studies. Promising directions for future research will be noted throughout.

  1. Physics with isotopically controlled semiconductors

    International Nuclear Information System (INIS)

    Haller, E.E.

    1994-08-01

    Control of the isotopic composition of semiconductors offers a wide range of new scientific opportunities. In this paper a number of recent results obtained with isotopically pure as well as deliberately mixed diamond and Ge bulk single crystals and Ge isotope superlattices will be reviewed. Isotopic composition affects several properties such as phonon energies, bandstructure and lattice constant in subtle but theoretically well understood ways. Large effects are observed for thermal conductivity, local vibrational modes of impurities and after neutron transmutation doping (NTD). Several experiments which could profit greatly from isotope control are proposed

  2. Solidarity and Social Cohesion in Late Modernity

    DEFF Research Database (Denmark)

    Juul, Søren

    2010-01-01

    social cohesion. The central theme is that contemporary solidarity is about recognition and a fair distribution of chances for recognition. This ideal may function as a normative standard for critical research and as a guideline for people in their moral struggles. What ultimately needs to be done...

  3. The Corporate Stake in Social Cohesion

    Science.gov (United States)

    Oketch, Moses O.

    2005-01-01

    Corporate Social Responsibility (CSR) is a function that transcends, but includes, making profits, creating jobs, and producing goods and services. The effectiveness with which corporations perform this function determines their contribution (or lack of contribution) to social cohesion. This article therefore presents a discussion of some of the…

  4. Cohesion as interaction in ELF spoken discourse

    Directory of Open Access Journals (Sweden)

    T. Christiansen

    2013-10-01

    Full Text Available Hitherto, most research into cohesion has concentrated on texts (usually written only in standard Native Speaker English – e.g. Halliday and Hasan (1976. By contrast, following on the work in anaphora of such scholars as Reinhart (1983 and Cornish (1999, Christiansen (2011 describes cohesion as an interac­tive process focusing on the link between text cohesion and discourse coherence. Such a consideration of cohesion from the perspective of discourse (i.e. the process of which text is the product -- Widdowson 1984, p. 100 is especially relevant within a lingua franca context as the issue of different variations of ELF and inter-cultural concerns (Guido 2008 add extra dimensions to the complex multi-code interaction. In this case study, six extracts of transcripts (approximately 1000 words each, taken from the VOICE corpus (2011 of conference question and answer sessions (spoken interaction set in multicultural university con­texts are analysed in depth by means of a qualitative method.

  5. Group Cohesion in Experiential Growth Groups

    Science.gov (United States)

    Steen, Sam; Vasserman-Stokes, Elaina; Vannatta, Rachel

    2014-01-01

    This article explores the effect of web-based journaling on changes in group cohesion within experiential growth groups. Master's students were divided into 2 groups. Both used a web-based platform to journal after each session; however, only 1 of the groups was able to read each other's journals. Quantitative data collected before and…

  6. Group Cohesiveness in the Black Panther Party

    Science.gov (United States)

    Calloway, Carolyn R.

    1977-01-01

    This study selects for study the following propositions: 1) similarity among members increased the degree of cohesiveness within the party, 2) group devotion heightened interest in accomplishing group goals and 3) the threat of an external enemy led to interdependence among members and affected both activities and leadership styles. (Author/AM)

  7. Microzonation Analysis of Cohesionless and Cohesive Soil

    Directory of Open Access Journals (Sweden)

    Tan Choy Soon

    2017-01-01

    Full Text Available Urban seismic risk is a continuous worldwide issue, numerous researchers are putting great effort in dealing with how to minimise the level of the threat. The only way to minimise the social and economic consequences caused but the seismic risk is through comprehensive earthquake scenario analysis such as ground response analysis. This paper intends to examine the characteristic of shear wave velocity and peak ground acceleration on cohesionless and cohesiveness soil. In order to examine the characteristic of shear wave velocity and peak ground acceleration on cohesionless and cohesiveness soil, ground response analysis was performed using Nonlinear Earthquake Site Response Analysis (NERA and Equivalent-linear Earthquake Site Response Analysis (EERA. The value of ground acceleration was initially high at bedrock and vanishes during the propagation process. It is thus, the measured acceleration at surface is therefore much lower as compare to at bedrock. Result shows that seismic waves can travel faster in harder soil as compared to softer soil. Cohesive soil contributes more to the shaking amplification than cohesionless soil such as sand and harder soil. This is known as local site effect. The typical example is the Mexico Earthquake that happened in 1985. As conclusion, peak ground acceleration for cohesive soil is higher than in cohesionless soil.

  8. Validation of the Child Sport Cohesion Questionnaire

    Science.gov (United States)

    Martin, Luc J.; Carron, Albert V.; Eys, Mark A.; Loughead, Todd

    2013-01-01

    The purpose of the present study was to test the validity evidence of the Child Sport Cohesion Questionnaire (CSCQ). To accomplish this task, convergent, discriminant, and known-group difference validity were examined, along with factorial validity via confirmatory factor analysis (CFA). Child athletes (N = 290, M[subscript age] = 10.73 plus or…

  9. Toward a Cohesive Theory of Visual Literacy

    Science.gov (United States)

    Avgerinou, Maria D.; Pettersson, Rune

    2011-01-01

    Despite the fact that to date Visual Literacy (VL) scholars have not arrived at a general consensus for a theoretical organization of the VL field, important conceptual investigations have emerged over the past four decades. In this paper we discuss and synthesize those studies. We then present a first attempt toward a cohesive theory of VL. The…

  10. Slow stress relaxation behavior of cohesive powders

    NARCIS (Netherlands)

    Imole, Olukayode Isaiah; Paulick, Maria; Magnanimo, Vanessa; Morgenmeyer, Martin; Ramaioli, Marco; Chavez Montes, Bruno E.; Kwade, Arno; Luding, Stefan

    2016-01-01

    We present uniaxial (oedometric) compression tests on two cohesive industrially relevant granular materials (cocoa and limestone powder). A comprehensive set of experiments is performed using two devices – the FT4 Powder Rheometer and the custom made lambdameter – in order to investigate the

  11. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  12. Territorial cohesion post - 2013 : To whomsoever it may concern

    NARCIS (Netherlands)

    Faludi, A.K.F.

    2010-01-01

    Conceived as a motion for resolution, the paper considers territorial cohesion now being on the statute book, the Green Paper on Territorial Cohesion, Barca making the case for integrated, place-based strategies, the EU Strategy for the Baltic Sea Region and the future of Cohesion policy. The

  13. III-V semiconductor materials and devices

    CERN Document Server

    Malik, R J

    1989-01-01

    The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.

  14. Bulk and interface dielectric functions: New results within the tight-binding approximation

    International Nuclear Information System (INIS)

    Elvira, V.D.; Duran, J.C.

    1991-01-01

    A tight-binding approach is used to analyze the dielectric behaviour of bulk semiconductors and semiconductor interfaces. This time interactions between second nearest neighbours are taken into account and several electrostatic models are proposed for the induced charge density around the atoms. The bulk dielectric function of different semiconductors (Si, Ge, GaAs and AlAs) are obtained and compared with other theoretical and experimental results. Finally, the energy band offset for GaAs-AlAs(1,0,0) interface is obtained and related to bulk properties of both semiconductors. The results presented in this paper show how the use of very simple but more realistic electrostatic models improve the analysis of the screening properties in semiconductors, giving a new support to the consistent tight-binding method for studying characteristics related to those properties. (Author)

  15. Experimental Investigation of Effects of Vibration upon Elastic and Cohesive Properties of Beds of Wet Sand

    Directory of Open Access Journals (Sweden)

    S. Alsop

    1995-01-01

    Full Text Available The transmission of sinusoidal vibrations through beds of cohesive particulate solids was measured. Results were interpreted in terms of a critical state model to predict the elastic swelling constant k, and the cohesive stress C. Factorial experimental design was used to identify significant parameters. Factors that affect k include percent moisture, bulk density, sample size, sample shape, the presence of a supporting membrane, and loading order. Factors that affect C include percent moisture and particle size distribution. Factors affecting k were interpreted in terms of their effects upon bed structure and factors affecting C in terms of an equivalent pore water pressure due to capillary and liquid bridge effects. The critical state model was modified to incorporate general relationships between axial and radial strains.

  16. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  17. Bulk oil clauses

    International Nuclear Information System (INIS)

    Gough, N.

    1993-01-01

    The Institute Bulk Oil Clauses produced by the London market and the American SP-13c Clauses are examined in detail in this article. The duration and perils covered are discussed, and exclusions, adjustment clause 15 of the Institute Bulk Oil Clauses, Institute War Clauses (Cargo), and Institute Strikes Clauses (Bulk Oil) are outlined. (UK)

  18. High pressure study of the zinc phosphide semiconductor compound in two different phases

    International Nuclear Information System (INIS)

    Mokhtari, Ali

    2009-01-01

    Electronic and structural properties of the zinc phosphide semiconductor compound are calculated at hydrostatic pressure using the full-potential all-electron linearized augmented plane wave plus local orbital (FP-LAPW+lo) method in both cubic and tetragonal phases. The exchange-correlation potential is treated by the generalized gradient approximation within the scheme of Perdew, Burke and Ernzerhof, GGA96 (1996 Phys. Rev. Lett. 77 3865). Also, the Engel and Vosko GGA formalism, EV-GGA (Engel and Vosko 1993 Phys. Rev. B 47 13164), is used to improve the band-gap results. Internal parameters are optimized by relaxing the atomic positions in the force directions using the Hellman-Feynman approach. The lattice constants, internal parameters, bulk modulus, cohesive energy and band structures have been calculated and compared to the available experimental and theoretical results. The structural calculations predict that the stable phase is tetragonal. The effects of hydrostatic pressure on the behavior of band parameters such as band-gap, valence bandwidths and internal gaps (the energy gap between different parts of the valence bands) are studied using both GGA96 and EV-GGA.

  19. High pressure study of the zinc phosphide semiconductor compound in two different phases

    Energy Technology Data Exchange (ETDEWEB)

    Mokhtari, Ali [Simulation Laboratory, Department of Physics, Faculty of Science, Shahrekord University, PB 115, Shahrekord (Iran, Islamic Republic of)], E-mail: mokhtari@sci.sku.ac.ir

    2009-07-08

    Electronic and structural properties of the zinc phosphide semiconductor compound are calculated at hydrostatic pressure using the full-potential all-electron linearized augmented plane wave plus local orbital (FP-LAPW+lo) method in both cubic and tetragonal phases. The exchange-correlation potential is treated by the generalized gradient approximation within the scheme of Perdew, Burke and Ernzerhof, GGA96 (1996 Phys. Rev. Lett. 77 3865). Also, the Engel and Vosko GGA formalism, EV-GGA (Engel and Vosko 1993 Phys. Rev. B 47 13164), is used to improve the band-gap results. Internal parameters are optimized by relaxing the atomic positions in the force directions using the Hellman-Feynman approach. The lattice constants, internal parameters, bulk modulus, cohesive energy and band structures have been calculated and compared to the available experimental and theoretical results. The structural calculations predict that the stable phase is tetragonal. The effects of hydrostatic pressure on the behavior of band parameters such as band-gap, valence bandwidths and internal gaps (the energy gap between different parts of the valence bands) are studied using both GGA96 and EV-GGA.

  20. Conductivity in transparent oxide semiconductors.

    Science.gov (United States)

    King, P D C; Veal, T D

    2011-08-24

    conductivity in TCOs. We discuss models that attempt to explain both the bulk and surface conductivity on the basis of bulk band structure features common across the TCOs, and compare these materials to other semiconductors. Finally, we briefly consider transparency in these materials, and its interplay with conductivity. Understanding this interplay, as well as the microscopic contenders for providing the conductivity of these materials, will prove essential to the future design and control of TCO semiconductors, and their implementation into novel multifunctional devices. © 2011 IOP Publishing Ltd

  1. Natural disasters and indicators of social cohesion

    Czech Academy of Sciences Publication Activity Database

    Calo-Blanco, A.; Kovářík, Jaromír; Mengel, F.; Romero, J. G.

    2017-01-01

    Roč. 12, č. 6 (2017), s. 1-13, č. článku e0176885. E-ISSN 1932-6203 R&D Projects: GA ČR(CZ) GA14-22044S Institutional support: RVO:67985998 Keywords : social cohesion * trust * climate Subject RIV: AH - Economic s OBOR OECD: Applied Economic s, Econometrics Impact factor: 2.806, year: 2016

  2. Whither Elite Cohesion in Mexico: A Comment

    Science.gov (United States)

    1988-11-01

    the problem of elite cohesion, including the mechanisms-- especially the camarilla system--whereby balance and equilibrium, control and cooptation...Generacicnes: Los Protagonistas de Ia Reforma y la Revoluci(n Mexicana, Secretaria de Educacion Pblica, Consejo Nacional de Fomento Educat ivo, Mexico City...loyalty and discipline toward the system as a whole, and especially its apex, the president, and its key institution, the PRI. All this looks different

  3. Brownfield regeneration: Towards strengthening social cohesion?

    Directory of Open Access Journals (Sweden)

    Minić Marta

    2016-01-01

    Full Text Available In broader terms, the paper refers to the topic of brownfield regeneration, as one of the most complex mechanisms for sustainable spatial development. In addition to the fact that brownfield regeneration demands a variety of instruments, such as: tax subsidies, the change of land use ownership, soil remediation, planning regulative amendments, etc., the complexity of brownfield regeneration is primarily seen in a number of stakeholders participating in such a process. Thus, the paper focuses on the social aspect of brownfield regeneration - precisely, on researching the community role and reviewing the possibilities for achieving the 'local' interests in complex developmental processes. The main research hypothesis is that brownfield regeneration positively affects the creation of and strengthening the social cohesion in the areas close to the brownfield site. More precisley, the paper presents the ways towards strenghtening social cohesion in the initial phase of the brownfield regeneration process, as well as the effects of such a process in its operationalisation phase on social cohesion. The thesis is examined by two main parameters: 1 participation of local community, and 2 social costs and benefits of brownfield regeneration versus greenfield investment. The research results are presented in the form of argumentative essay. In fact, the critical overview of arguments for and against the main research hypothesis is provided based on the review of interdisciplinary literature in the domain of brownfield regeneration. Such research organisation ensures the identification and description of the measures needed for strengthening social cohesion, as an utmost goal of this research. The final research contribution is about offering the guidelines for similar methodological approach in urban research.

  4. Social cohesion and interpersonal conflicts in projects

    OpenAIRE

    Ojiako, Udechukwu; Manville, Graham; Zouk, Nadine; Chipulu, Maxwell

    2016-01-01

    One particular area of project management literature that has continued to gain momentum in literature is its social dimension; with a number of scholars emphasising the fact that there is a considerable social dimension to every project activity. Within this context, the authors examine parameters that drive social facets of projects with a particular focus on social cohesion, interpersonal conflicts and national culture. Data from 167 project managers working in Kuwait were collected utilis...

  5. Micromechanical modeling and inverse identification of damage using cohesive approaches

    International Nuclear Information System (INIS)

    Blal, Nawfal

    2013-01-01

    In this study a micromechanical model is proposed for a collection of cohesive zone models embedded between two each elements of a standard cohesive-volumetric finite element method. An equivalent 'matrix-inclusions' composite is proposed as a representation of the cohesive-volumetric discretization. The overall behaviour is obtained using homogenization approaches (Hashin Shtrikman scheme and the P. Ponte Castaneda approach). The derived model deals with elastic, brittle and ductile materials. It is available whatever the triaxiality loading rate and the shape of the cohesive law, and leads to direct relationships between the overall material properties and the local cohesive parameters and the mesh density. First, rigorous bounds on the normal and tangential cohesive stiffnesses are obtained leading to a suitable control of the inherent artificial elastic loss induced by intrinsic cohesive models. Second, theoretical criteria on damageable and ductile cohesive parameters are established (cohesive peak stress, critical separation, cohesive failure energy,... ). These criteria allow a practical calibration of the cohesive zone parameters as function of the overall material properties and the mesh length. The main interest of such calibration is its promising capacity to lead to a mesh-insensitive overall response in surface damage. (author) [fr

  6. Relating Cohesive Zone Model to Linear Elastic Fracture Mechanics

    Science.gov (United States)

    Wang, John T.

    2010-01-01

    The conditions required for a cohesive zone model (CZM) to predict a failure load of a cracked structure similar to that obtained by a linear elastic fracture mechanics (LEFM) analysis are investigated in this paper. This study clarifies why many different phenomenological cohesive laws can produce similar fracture predictions. Analytical results for five cohesive zone models are obtained, using five different cohesive laws that have the same cohesive work rate (CWR-area under the traction-separation curve) but different maximum tractions. The effect of the maximum traction on the predicted cohesive zone length and the remote applied load at fracture is presented. Similar to the small scale yielding condition for an LEFM analysis to be valid. the cohesive zone length also needs to be much smaller than the crack length. This is a necessary condition for a CZM to obtain a fracture prediction equivalent to an LEFM result.

  7. Polarization-Resolved Study of High Harmonics from Bulk Semiconductors

    Science.gov (United States)

    Kaneshima, Keisuke; Shinohara, Yasushi; Takeuchi, Kengo; Ishii, Nobuhisa; Imasaka, Kotaro; Kaji, Tomohiro; Ashihara, Satoshi; Ishikawa, Kenichi L.; Itatani, Jiro

    2018-06-01

    The polarization property of high harmonics from gallium selenide is investigated using linearly polarized midinfrared laser pulses. With a high electric field, the perpendicular polarization component of the odd harmonics emerges, which is not present with a low electric field and cannot be explained by the perturbative nonlinear optics. A two-dimensional single-band model is developed to show that the anisotropic curvature of an energy band of solids, which is pronounced in an outer part of the Brillouin zone, induces the generation of the perpendicular odd harmonics. This model is validated by three-dimensional quantum mechanical simulations, which reproduce the orientation dependence of the odd-order harmonics. The quantum mechanical simulations also reveal that the odd- and even-order harmonics are produced predominantly by the intraband current and interband polarization, respectively. These experimental and theoretical demonstrations clearly show a strong link between the band structure of a solid and the polarization property of the odd-order harmonics.

  8. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  9. Printable semiconductor structures and related methods of making and assembling

    Science.gov (United States)

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang; , Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

    2013-03-12

    The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

  10. Charged Semiconductor Defects Structure, Thermodynamics and Diffusion

    CERN Document Server

    Seebauer, Edmund G

    2009-01-01

    The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, P...

  11. Super heavy element Copernicium: Cohesive and electronic properties revisited

    Science.gov (United States)

    Gyanchandani, Jyoti; Mishra, Vinayak; Dey, G. K.; Sikka, S. K.

    2018-01-01

    First principles scalar relativistic (SR) calculations with and without including the spin orbit (SO) interactions have been performed for solid Copernicium (Cn) to determine its ground state equilibrium structure, volume, bulk modulus, pressure derivative of the bulk modulus, density of states and band structure. Both SR and SR+SO calculations have been performed with 6p levels treated as part of core electrons and also as part of valence electrons. These calculations have been performed for the rhombohedral, BCT, FCC, HCP, BCC and SC structures. Results have been compared with the results for Hg which is lighter homologue of Cn in the periodic table. We find hcp to be the stable crystal structure at SR level of theory and also at SR+SO level of theory when the 6p electrons are treated as part of core electrons. With 6p as part of valence electrons, SR+SO level of computations, however, yield bcc structure to be the most stable structure. Equilibrium volume (V0) of the most stable crystal structure at SR level of theory viz. hcp structure is 188.66 a.u.3whereas its value for the bcc structure, the equilibrium ground state structure at SR+SO level of theory is 165.71 a.u.3 i.e a large change due to relativistic effects is seen. The density of states at Fermi level is much smaller in Cn than in Hg, making it a poorer metal than mercury. In addition the cohesive energy of Cn is computed to be almost two times that of Hg for SR+SO case.

  12. Force Transmission Modes of Non-Cohesive and Cohesive Materials at the Critical State.

    Science.gov (United States)

    Wang, Ji-Peng

    2017-08-31

    This paper investigates the force transmission modes, mainly described by probability density distributions, in non-cohesive dry and cohesive wet granular materials by discrete element modeling. The critical state force transmission patterns are focused on with the contact model effect being analyzed. By shearing relatively dense and loose dry specimens to the critical state in the conventional triaxial loading path, it is observed that there is a unique critical state force transmission mode. There is a universe critical state force distribution pattern for both the normal contact forces and tangential contact forces. Furthermore, it is found that using either the linear Hooke or the non-linear Hertz model does not affect the universe force transmission mode, and it is only related to the grain size distribution. Wet granular materials are also simulated by incorporating a water bridge model. Dense and loose wet granular materials are tested, and the critical state behavior for the wet material is also observed. The critical state strength and void ratio of wet granular materials are higher than those of a non-cohesive material. The critical state inter-particle distribution is altered from that of a non-cohesive material with higher probability in relatively weak forces. Grains in non-cohesive materials are under compressive stresses, and their principal directions are mainly in the axial loading direction. However, for cohesive wet granular materials, some particles are in tension, and the tensile stresses are in the horizontal direction on which the confinement is applied. The additional confinement by the tensile stress explains the macro strength and dilatancy increase in wet samples.

  13. Temperature dependent electronic conduction in semiconductors

    International Nuclear Information System (INIS)

    Roberts, G.G.; Munn, R.W.

    1980-01-01

    This review describes the temperature dependence of bulk-controlled electronic currents in semiconductors. The scope of the article is wide in that it contrasts conduction mechanisms in inorganic and organic solids and also single crystal and disordered semiconductors. In many experimental situations it is the metal-semiconductor contact or the interface between two dissimilar semiconductors that governs the temperature dependence of the conductivity. However, in order to keep the length of the review within reasonable bounds, these topics have been largely avoided and emphasis is therefore placed on bulk-limited currents. A central feature of electronic conduction in semiconductors is the concentrations of mobile electrons and holes that contribute to the conductivity. Various statistical approaches may be used to calculate these densities which are normally strongly temperature dependent. Section 1 emphasizes the relationship between the position of the Fermi level, the distribution of quantum states, the total number of electrons available and the absolute temperature of the system. The inclusion of experimental data for several materials is designed to assist the experimentalist in his interpretation of activation energy curves. Sections 2 and 3 refer to electronic conduction in disordered solids and molecular crystals, respectively. In these cases alternative approaches to the conventional band theory approach must be considered. For example, the velocities of the charge carriers are usually substantially lower than those in conventional inorganic single crystal semiconductors, thus introducing the possibility of an activated mobility. Some general electronic properties of these materials are given in the introduction to each of these sections and these help to set the conduction mechanisms in context. (orig.)

  14. Written cohesion in children with and without language learning disabilities.

    Science.gov (United States)

    Koutsoftas, Anthony D; Petersen, Victoria

    2017-09-01

    Cohesion refers to the linguistic elements of discourse that contribute to its continuity and is an important element to consider as part of written language intervention, especially in children with language learning disabilities (LLD). There is substantial evidence that children with LLD perform more poorly than typically developing (TD) peers on measures of cohesion in spoken language and on written transcription measures; however, there is far less research comparing groups on cohesion as a measure of written language across genres. The current study addresses this gap through the following two aims. First, to describe and compare cohesion in narrative and expository writing samples of children with and without language learning disabilities. Second, to relate measures of cohesion to written transcription and translation measures, oral language, and writing quality. Fifty intermediate-grade children produced one narrative and one expository writing sample from which measures of written cohesion were obtained. These included the frequency, adequacy and complexity of referential and conjunctive ties. Expository samples resulted in more complex cohesive ties and children with TD used more complex ties than peers with LLD. Different relationships among cohesion measures and writing were observed for narrative verse expository samples. Findings from this study demonstrate cohesion as a discourse-level measure of written transcription and how the use of cohesion can vary by genre and group (LLD, TD). Clinical implications for assessment, intervention, and future research are provided. © 2016 Royal College of Speech and Language Therapists.

  15. Groupthink: one peril of group cohesiveness.

    Science.gov (United States)

    Rosenblum, E H

    1982-04-01

    A group's aim is to make well-conceived, well-understood, well-accepted and realistic decisions to reach their agreed-upon goals. This aim applies equally to their own goals and those occasionally imposed by outsiders such as hospital administration, accreditation committees and the federal government. Effective groupwork requires group cohesion with its components of trust, risk taking, mutual support, and group esteem. With constant vigilance the group can maintain its positive dynamics, so that the unhealthy state of groupthink does not undermine its existence.

  16. Coaches' Perceptions of Team Cohesion in Paralympic Sports.

    Science.gov (United States)

    Falcão, William R; Bloom, Gordon A; Loughead, Todd M

    2015-07-01

    The purpose of this study was to investigate Paralympic coaches' perceptions of team cohesion. Seven head coaches of summer and winter Canadian Paralympic sport teams participated in the study. Four participants coached individual sports and 3 coached team sports. Data were collected using semistructured interviews and analyzed using thematic analysis. The results addressed the coaches' perceptions of cohesion in the Paralympic sport setting and strategies used to foster cohesion with their teams. Participants described using techniques and strategies for enhancing cohesion that were similar to those in nondisability sport, such as task-related activities, goal setting, and regularly communicating with their athletes. They also listed how cohesion was distinct to the Paralympic setting, such as the importance of interpersonal activities to build social cohesion. The implications of these results for coaching athletes with a disability are also presented.

  17. The association between status and cohesion in sport teams.

    Science.gov (United States)

    Jacob, C S; Carron, A V

    1998-02-01

    The main objective of this study was to establish the relationship between perceptions of status attributes and cohesion and status ranking and cohesion. A secondary aim was to determine whether age (operationalized by scholastic levels) or culture serves as a moderator in the relationship between either status attributes or status ranking and cohesion. Another secondary aim was to determine if differences are present in the importance attached by athletes to status attributes. Canadian and Indian athletes were tested. Although perceptions of the importance of status attributes and cohesiveness were related, the effect size was small (Green, 1991); perceptions of status ranking and cohesiveness were not related. Neither scholastic level nor culture served as a moderator in the association between either status attributes or status rank and cohesion. The importance that athletes attach to status attributes is similar between scholastic levels and across cultures. The results are discussed in terms of the role of status in sport teams.

  18. Cohesion, Cracking, Dilation, and Flow -- Rheological Behavior of Cohesive Pharmaceutical Powders

    Science.gov (United States)

    Muzzio, Fernando

    2007-03-01

    Cohesive powders can be loosely defined as systems where the attractive forced between particles exceed the average particle weight. Cohesive powder flow is interesting from a wide range of reasons. Their main characteristic, intermittence, is evidenced both in the interruption of flow out of hoppers (a mundane issue causing great annoyance to industrial practitioners) and in the sudden avalanching of snow and dirt that has terrified and terrified mankind since the dawn of time. At the present time, our ability to predict either of these phenomena (and many more involving cohesive powders) is very limited, primarily due to an incomplete understanding of their constitutive behavior. To wit, consider just a simple fact: a flowing powder never has constant density. Equations describing the relationship between velocity, shear, stress, and density are rudimentary at best. Computational and experimental approaches for characterizing flow behavior are in their infancy. In this talk, I will describe some recent progress achieved at Rutgers by our group. New instruments have been developed to determine simultaneously powder density and cohesive flow effects. Extensive measurements have been carried out focusing on pharmaceutical blends. These results have been used to fine-tune computational models that accurately predict dilation, flow in drums, and flow in hoppers. Impact of these observations for pharmaceutical manufacturing applications will be discussed in some detail.

  19. Personality in teams: its relationship to social cohesion, task cohesion, and team performance

    NARCIS (Netherlands)

    van Vianen, A.E.M.; de Dreu, C.K.W.

    2001-01-01

    This study continued past research on the relationship between personality composition in teams and social cohesion and team performance (Barrick, Stewart, Neubert, & Mount, 1998). Results from the Barrick et al. sample (N = 50) were compared with data from two new samples, one comprising drilling

  20. Environmental cohesion across the Hungarian-Croatian border

    OpenAIRE

    Varjú Viktor

    2016-01-01

    Environmental cohesion (as a new EU paradigm for a place-based interpretation of environmental justice) has a clear connection to territorial cohesion. Based on this idea, advantages for people can include an equitable distribution of environmental protection and access to environmental services. In non-EU countries regional environmental cohesion is used as an instrument to accelerate accession to the EU and it may be manifested as a declaration of environ...

  1. Extracting hot carriers from photoexcited semiconductor nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiaoyang

    2014-12-10

    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  2. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  3. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  4. Quantum Effects in the Thermoelectric Power Factor of Low-Dimensional Semiconductors.

    Science.gov (United States)

    Hung, Nguyen T; Hasdeo, Eddwi H; Nugraha, Ahmad R T; Dresselhaus, Mildred S; Saito, Riichiro

    2016-07-15

    We theoretically investigate the interplay between the confinement length L and the thermal de Broglie wavelength Λ to optimize the thermoelectric power factor of semiconducting materials. An analytical formula for the power factor is derived based on the one-band model assuming nondegenerate semiconductors to describe quantum effects on the power factor of the low-dimensional semiconductors. The power factor is enhanced for one- and two-dimensional semiconductors when L is smaller than Λ of the semiconductors. In this case, the low-dimensional semiconductors having L smaller than their Λ will give a better thermoelectric performance compared to their bulk counterpart. On the other hand, when L is larger than Λ, bulk semiconductors may give a higher power factor compared to the lower dimensional ones.

  5. Automated Behavior and Cohesion Assessment Tools, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — An important consideration of long duration space flight operations is interpersonal dynamics that effect crew cohesion and performance. Flight surgeons have stated...

  6. EXAMINATION OF HANDBALL PLAYERS’ TEAM COHESION

    Directory of Open Access Journals (Sweden)

    İlyas Görgüt

    2017-04-01

    Full Text Available The aim of this study was to determine team cohesion of handballplayers who were actively engaged in sport in various categories. The study group consisted of a total of 607 handball players, 317 female and 290 male, selected by random method and from 11 provinces of Turkey according to the some factors. When we examine the age distributions of the participants, 121 athletes appear to be 13 years and under, 309 athletes 14-18 years, 94 athletes 19-23 years, 54 athletes 24-28 years and 29 athletes 29 years and over. In addition, 186 of them expressed their education situation as middle school, 253 of them expressed their education situation as high school and 168 of them expressed their education situation as university. Personal information form and team cohesion scale, developed by Widmeyer et al. (1985 and adapted to Turkish by Moralı (1994, were used as a data collecting tools. The Kolmogorov Smirnov test was used to measure whether the obtained data showed normal distribution or not and nonparametric tests were used to determine the subscale scores because they didn’t show normal disturbance. For binary comparisons Mann Whitney U test, for multiple comparisons Kruskal Wallis variance and for the difference between significant groups Bonferroni Mann Whitney U test were used. As a result of the research, there were significant differences in scale subscale scores in terms of gender, age, educational status, sports experience, income and province variables of handball players.

  7. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  8. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  9. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  10. Large area bulk superconductors

    Science.gov (United States)

    Miller, Dean J.; Field, Michael B.

    2002-01-01

    A bulk superconductor having a thickness of not less than about 100 microns is carried by a polycrystalline textured substrate having misorientation angles at the surface thereof not greater than about 15.degree.; the bulk superconductor may have a thickness of not less than about 100 microns and a surface area of not less than about 50 cm.sup.2. The textured substrate may have a thickness not less than about 10 microns and misorientation angles at the surface thereof not greater than about 15.degree.. Also disclosed is a process of manufacturing the bulk superconductor and the polycrystalline biaxially textured substrate material.

  11. Polaritons dispersion in a composite ferrite-semiconductor structure near gyrotropic-nihility state

    International Nuclear Information System (INIS)

    Tuz, Vladimir R.

    2016-01-01

    In the context of polaritons in a ferrite-semiconductor structure which is influenced by an external static magnetic field, the gyrotropic-nihility can be identified from the dispersion equation related to bulk polaritons as a particular extreme state, at which the longitudinal component of the corresponding constitutive tensor and bulk constant simultaneously acquire zero. Near the frequency of the gyrotropic-nihility state, the conditions of branches merging of bulk polaritons, as well as an anomalous dispersion of bulk and surface polaritons are found and discussed. - Highlights: • Gyrotropic-nihility state is identified from the dispersion equation related to bulk polaritons in a magnetic-semiconductor superlattice. • The conditions of branches merging of bulk polaritons are found. • An anomalous dispersion of bulk and surface polaritons is found and discussed.

  12. Polaritons dispersion in a composite ferrite-semiconductor structure near gyrotropic-nihility state

    Energy Technology Data Exchange (ETDEWEB)

    Tuz, Vladimir R., E-mail: tvr@rian.kharkov.ua

    2016-12-01

    In the context of polaritons in a ferrite-semiconductor structure which is influenced by an external static magnetic field, the gyrotropic-nihility can be identified from the dispersion equation related to bulk polaritons as a particular extreme state, at which the longitudinal component of the corresponding constitutive tensor and bulk constant simultaneously acquire zero. Near the frequency of the gyrotropic-nihility state, the conditions of branches merging of bulk polaritons, as well as an anomalous dispersion of bulk and surface polaritons are found and discussed. - Highlights: • Gyrotropic-nihility state is identified from the dispersion equation related to bulk polaritons in a magnetic-semiconductor superlattice. • The conditions of branches merging of bulk polaritons are found. • An anomalous dispersion of bulk and surface polaritons is found and discussed.

  13. Packing and Cohesive Properties of Some Locally Extracted Starches

    African Journals Online (AJOL)

    ... properties of the particles affect the packing and cohesive properties of the starches, and are important in predicting the behaviour of the starches during handling and use in pharmaceutical preparations. These properties need to be closely controlled in pre-formulation studies. Keywords: Packing and cohesive properties, ...

  14. A Reappraisal of Lexical Cohesion in Conversational Discourse

    Science.gov (United States)

    Gomez Gonzalez, Maria De Los Angeles

    2013-01-01

    Cohesion, or the connectedness of discourse, has been recognized as playing a crucial role in both language production and comprehension processes. Researchers have debated about the "right" number and classification of cohesive devices, as well as about their interaction with coherence and/or genre. The present study proposes an integrative model…

  15. Cohesion in Online Student Teams versus Traditional Teams

    Science.gov (United States)

    Hansen, David E.

    2016-01-01

    Researchers have found that the electronic methods in use for online team communication today increase communication quality in project-based work situations. Because communication quality is known to influence group cohesion, the present research examined whether online student project teams are more cohesive than traditional teams. We tested…

  16. Understanding Social Cohesion Differences in Common Interest Housing Developments

    NARCIS (Netherlands)

    Dam, van R.I.; Eshuis, J.; Twist, van M.J.W.; Anquetil, V.

    2014-01-01

    The worldwide upsurge of common interest housing developments (CIDs) has stirred up debates regarding community development and social cohesion. Critics have argued that CIDs lack social cohesion because people regulate the community via rules and contracts rather than through social relationships

  17. Anaphoric Referencing: A Cohesive Device in Written and Spoken ...

    African Journals Online (AJOL)

    unique firstlady

    cohesive function "if and when they can be interpreted through their relation to some other (explicit) encoding device in the same passage". ... is Anaphoric but when the implicit term precedes its linguistic referent, the cohesive tie is known as ...

  18. Cohesion: An Overview for the Teacher of Reading. Revised.

    Science.gov (United States)

    Chapman, L. John

    Pronouns, substitutes, elipses, conjunctions, synonyms, antonyms, superordinates and subordinates, and part-whole relations all provide cohesive ties that help a reader understand text. A study at Britain's Open University (England) has revealed the way in which the perception of cohesive ties is achieved as children's reading ability grows.…

  19. Characterizing delamination of fibre composites by mixed mode cohesive laws

    DEFF Research Database (Denmark)

    Sørensen, Bent F.; Jacobsen, Torben K.

    2009-01-01

    A novel method is used for the determination of mixed mode cohesive laws and bridging laws for the characterisation of crack bridging in composites. The approach is based on an application of the J integral. The obtained cohesive laws were found to possess high peak stress values. Mixed mode...

  20. Food education: health and social cohesion

    Directory of Open Access Journals (Sweden)

    Eva Zafra Aparici

    2017-07-01

    Full Text Available Using a theoretical-reflexive approach, this article connects the results of various qualitative studies in social conflict and medical anthropology, in order to investigate how food can be a tool for social transformation in terms of health but also in terms of the dialogue, respect and coexistence among people, groups and communities. In this sense the article presents a first approximation to a new theoretical and methodological approach to food education. In this approach, food adopts a political, sociocultural and participatory perspective that brings us closer to an innovative understanding of the phenomenon of food: not only as an analytic and diagnostic tool, but also as an instrument for health education interventions toward conflict resolution and the promotion of healthier societies overall – nutritionally, but also in terms of equality and social cohesion.

  1. Time dependent fracture and cohesive zones

    Science.gov (United States)

    Knauss, W. G.

    1993-01-01

    This presentation is concerned with the fracture response of materials which develop cohesive or bridging zones at crack tips. Of special interest are concerns regarding crack stability as a function of the law which governs the interrelation between the displacement(s) or strain across these zones and the corresponding holding tractions. It is found that for some materials unstable crack growth can occur, even before the crack tip has experienced a critical COD or strain across the crack, while for others a critical COD will guarantee the onset of fracture. Also shown are results for a rate dependent nonlinear material model for the region inside of a craze for exploring time dependent crack propagation of rate sensitive materials.

  2. Cohesive motion in one-dimensional flocking

    International Nuclear Information System (INIS)

    Dossetti, V

    2012-01-01

    A one-dimensional rule-based model for flocking, which combines velocity alignment and long-range centering interactions, is presented and studied. The induced cohesion in the collective motion of the self-propelled agents leads to unique group behavior that contrasts with previous studies. Our results show that the largest cluster of particles, in the condensed states, develops a mean velocity slower than the preferred one in the absence of noise. For strong noise, the system also develops a non-vanishing mean velocity, alternating its direction of motion stochastically. This allows us to address the directional switching phenomenon. The effects of different sources of stochasticity on the system are also discussed. (paper)

  3. In situ erosion of cohesive sediment

    International Nuclear Information System (INIS)

    Williamson, H.J.; Ockenden, M.C.

    1993-01-01

    There has been increasing interest in tidal power schemes and the effect of a tidal energy barrage on the environment. A large man-made environmental change, such as a barrage, would be expected to have significant effects on the sediment distribution and stability of an estuary and these effects need to be assessed when considering a tidal barrage project. This report describes the development of apparatus for in-situ measurements of cohesive sediment erosion on inter-tidal mudflats. Development of the prototype field erosion bell and field testing was commissioned on behalf of the Department of Trade and Industry by the Energy Technology Support Unit (ETSU). This later work commenced in August 1991 and was completed in September 1992. (Author)

  4. Cohesive zone model for direct silicon wafer bonding

    Science.gov (United States)

    Kubair, D. V.; Spearing, S. M.

    2007-05-01

    Direct silicon wafer bonding and decohesion are simulated using a spectral scheme in conjunction with a rate-dependent cohesive model. The cohesive model is derived assuming the presence of a thin continuum liquid layer at the interface. Cohesive tractions due to the presence of a liquid meniscus always tend to reduce the separation distance between the wafers, thereby opposing debonding, while assisting the bonding process. In the absence of the rate-dependence effects the energy needed to bond a pair of wafers is equal to that needed to separate them. When rate-dependence is considered in the cohesive law, the experimentally observed asymmetry in the energetics can be explained. The derived cohesive model has the potential to form a bridge between experiments and a multiscale-modelling approach to understand the mechanics of wafer bonding.

  5. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  6. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  7. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  8. Cohesive zone modelling of wafer bonding and fracture: effect of patterning and toughness variations

    Science.gov (United States)

    Kubair, D. V.; Spearing, S. M.

    2006-03-01

    Direct wafer bonding has increasingly become popular in the manufacture of microelectromechanical systems and semiconductor microelectronics components. The success of the bonding process is controlled by variables such as wafer flatness and surface preparation. In order to understand the effects of these variables, spontaneous planar crack propagation simulations were performed using the spectral scheme in conjunction with a cohesive zone model. The fracture-toughness on the bond interface is varied to simulate the effect of surface roughness (nanotopography) and patterning. Our analysis indicated that the energetics of crack propagation is sensitive to the local surface property variations. The patterned wafers are tougher (well bonded) than the unpatterned ones of the same average fracture-toughness.

  9. Handbook of compound semiconductors growth, processing, characterization, and devices

    CERN Document Server

    Holloway, Paul H

    1996-01-01

    This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.

  10. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  11. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  12. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  13. Theory of semiconductor laser cooling

    Science.gov (United States)

    Rupper, Greg

    Recently laser cooling of semiconductors has received renewed attention, with the hope that a semiconductor cooler might be able to achieve cryogenic temperatures. In order to study semiconductor laser cooling at cryogenic temperatures, it is crucial that the theory include both the effects of excitons and the electron-hole plasma. In this dissertation, I present a theoretical analysis of laser cooling of bulk GaAs based on a microscopic many-particle theory of absorption and luminescence of a partially ionized electron-hole plasma. This theory has been analyzed from a temperature 10K to 500K. It is shown that at high temperatures (above 300K), cooling can be modeled using older models with a few parameter changes. Below 200K, band filling effects dominate over Auger recombination. Below 30K excitonic effects are essential for laser cooling. In all cases, excitonic effects make cooling easier then predicted by a free carrier model. The initial cooling model is based on the assumption of a homogeneous undoped semiconductor. This model has been systematically modified to include effects that are present in real laser cooling experiments. The following modifications have been performed. (1) Propagation and polariton effects have been included. (2) The effect of p-doping has been included. (n-doping can be modeled in a similar fashion.) (3) In experiments, a passivation layer is required to minimize non-radiative recombination. The passivation results in a npn heterostructure. The effect of the npn heterostructure on cooling has been analyzed. (4) The effect of a Gaussian pump beam was analyzed and (5) Some of the parameters in the cooling model have a large uncertainty. The effect of modifying these parameters has been analyzed. Most of the extensions to the original theory have only had a modest effect on the overall results. However we find that the current passivation technique may not be sufficient to allow cooling. The passivation technique currently used appears

  14. Proceedings of wide band gap semiconductors

    International Nuclear Information System (INIS)

    Moustakas, T.D.; Pankove, J.I.; Hamakawa, Y.

    1992-01-01

    This book contains the proceedings of wide band gap semiconductors. Wide band gap semiconductors are under intense study because of their potential applications in photonic devices in the visible and ultraviolet part of the electromagnetic spectrum, and devices for high temperature, high frequency and high power electronics. Additionally, due to their unique mechanical, thermal, optical, chemical, and electronic properties many wide band gap semiconductors are anticipated to find applications in thermoelectric, electrooptic, piezoelectric and acoustooptic devices as well as protective coatings, hard coatings and heat sinks. Material systems covered in this symposium include diamond, II-VI compounds, III-V nitrides, silicon carbide, boron compounds, amorphous and microcrystalline semiconductors, chalcopyrites, oxides and halides. The various papers addressed recent experimental and theoretical developments. They covered issues related to crystal growth (bulk and thin films), structure and microstructure, defects, doping, optoelectronic properties and device applications. A theoretical session was dedicated to identifying common themes in the heteroepitaxy and the role of defects in doping, compensation and phase stability of this unique class of materials. Important experimental milestones included the demonstrations of bright blue injection luminescence at room temperatures from junctions based on III-V nitrides and a similar result from multiple quantum wells in a ZnSe double heterojunction at liquid nitrogen temperatures

  15. Semiconductor optoelectronic infrared spectroscopy

    International Nuclear Information System (INIS)

    Hollingworth, A.R.

    2001-08-01

    We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

  16. Cohesion energetics of carbon allotropes: Quantum Monte Carlo study

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Hyeondeok; Kang, Sinabro; Koo, Jahyun; Lee, Hoonkyung; Kwon, Yongkyung, E-mail: ykwon@konkuk.ac.kr [Division of Quantum Phases and Devices, School of Physics, Konkuk University, Seoul 143-701 (Korea, Republic of); Kim, Jeongnim, E-mail: jnkim@ornl.gov [Materials Science and Technology Division and Computer Science and Mathematics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

    2014-03-21

    We have performed quantum Monte Carlo calculations to study the cohesion energetics of carbon allotropes, including sp{sup 3}-bonded diamond, sp{sup 2}-bonded graphene, sp–sp{sup 2} hybridized graphynes, and sp-bonded carbyne. The computed cohesive energies of diamond and graphene are found to be in excellent agreement with the corresponding values determined experimentally for diamond and graphite, respectively, when the zero-point energies, along with the interlayer binding in the case of graphite, are included. We have also found that the cohesive energy of graphyne decreases systematically as the ratio of sp-bonded carbon atoms increases. The cohesive energy of γ-graphyne, the most energetically stable graphyne, turns out to be 6.766(6) eV/atom, which is smaller than that of graphene by 0.698(12) eV/atom. Experimental difficulty in synthesizing graphynes could be explained by their significantly smaller cohesive energies. Finally, we conclude that the cohesive energy of a newly proposed graphyne can be accurately estimated with the carbon–carbon bond energies determined from the cohesive energies of graphene and three different graphynes considered here.

  17. Cohesion Energetics of Carbon Allotropes: Quantum Monte Carlo Study

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Hyeondeok [Konkuk University, South Korea; Kang, Sinabro [Konkuk University, South Korea; Koo, Jahyun [Konkuk University, South Korea; Lee, Hoonkyung [Konkuk University, South Korea; Kim, Jeongnim [ORNL; Kwon, Yongkyung [Konkuk University, South Korea

    2014-01-01

    We have performed quantum Monte Carlo calculations to study the cohesion energetics of carbon allotropes, including sp3-bonded diamond, sp2-bonded graphene, sp-sp2 hybridized graphynes, and sp-bonded carbyne. The comput- ed cohesive energies of diamond and graphene are found to be in excellent agreement with the corresponding values de- termined experimentally for diamond and graphite, respectively, when the zero-point energies, along with the interlayer binding in the case of graphite, are included. We have also found that the cohesive energy of graphyne decreases system- atically as the ratio of sp-bonded carbon atoms increases. The cohesive energy of -graphyne, the most energetically- stable graphyne, turns out to be 6.766(6) eV/atom, which is smaller than that of graphene by 0.698(12) eV/atom. Experi- mental difficulty in synthesizing graphynes could be explained by their significantly smaller cohesive energies. Finally we conclude that the cohesive energy of a newly-proposed two-dimensional carbon network can be accurately estimated with the carbon-carbon bond energies determined from the cohesive energies of graphene and three different graphynes.

  18. Relationship between group cohesion and anxiety in soccer.

    Science.gov (United States)

    Borrego, Carla Chicau; Cid, Luis; Silva, Carlos

    2012-10-01

    Group cohesion in sport is a widely spread theme today. Research has found cohesion to be influenced by several individual and group components. Among the cognitive variables that relate to cohesion we found competitive anxiety. The purpose of this study was to examine the relation between task cohesion (ATG-T, and GI-T) and competitive state anxiety (A-state), and also if there would be a relation between cohesion and self-confidence. Participants were 366 football players of both genders male and female, aged between 15 to 23 years old, from Portugal's championships. Cohesion was measured using the Portuguese version of the Group Environment Questionnaire, and to assess competitive anxiety, we used the Portuguese version of the Competition State Anxiety Inventory 2. Our results show that female athletes report experiencing more cognitive anxiety and less self-confidence than male athletes. Only cognitive anxiety relates in a significantly negative way with the perception of cohesion (GI-T e ATG-T) in the total number of participants and in male athletes. Relatively to the somatic anxiety, it only relates negatively with the perception of the integration of the group in the total number of participants and in the male gender.

  19. Spectroscopy of organic semiconductors from first principles

    Science.gov (United States)

    Sharifzadeh, Sahar; Biller, Ariel; Kronik, Leeor; Neaton, Jeffery

    2011-03-01

    Advances in organic optoelectronic materials rely on an accurate understanding their spectroscopy, motivating the development of predictive theoretical methods that accurately describe the excited states of organic semiconductors. In this work, we use density functional theory and many-body perturbation theory (GW/BSE) to compute the electronic and optical properties of two well-studied organic semiconductors, pentacene and PTCDA. We carefully compare our calculations of the bulk density of states with available photoemission spectra, accounting for the role of finite temperature and surface effects in experiment, and examining the influence of our main approximations -- e.g. the GW starting point and the application of the generalized plasmon-pole model -- on the predicted electronic structure. Moreover, our predictions for the nature of the exciton and its binding energy are discussed and compared against optical absorption data. We acknowledge DOE, NSF, and BASF for financial support and NERSC for computational resources.

  20. Superductile bulk metallic glass

    International Nuclear Information System (INIS)

    Yao, K.F.; Ruan, F.; Yang, Y.Q.; Chen, N.

    2006-01-01

    Usually, monolithic bulk metallic glasses undergo inhomogeneous plastic deformation and exhibit poor ductility (<2%) at room temperature. We report a newly developed Pd-Si binary bulk metallic glass, which exhibits a uniform plastic deformation and a large plastic engineering strain of 82% and a plastic true strain of 170%, together with initial strain hardening, slight strain softening and final strain hardening characteristics. The uniform shear deformation and the ultrahigh plasticity are mainly attributed to strain hardening, which results from the nanoscale inhomogeneity due to liquid phase separation. The formed nanoscale inhomogeneity will hinder, deflect, and bifurcate the propagation of shear bands

  1. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  2. Introduction to Semiconductor Devices

    Science.gov (United States)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  3. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  4. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  5. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  6. Nuclear spin warm up in bulk n -GaAs

    Science.gov (United States)

    Kotur, M.; Dzhioev, R. I.; Vladimirova, M.; Jouault, B.; Korenev, V. L.; Kavokin, K. V.

    2016-08-01

    We show that the spin-lattice relaxation in n -type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, which cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is found in the quadrupole relaxation, induced by fluctuating donor charges. Therefore, quadrupole relaxation, which governs low field nuclear spin relaxation in semiconductor quantum dots, but was so far supposed to be harmless to bulk nuclei spins in the absence of optical pumping, can be studied and harnessed in the much simpler model environment of n -GaAs bulk crystal.

  7. 2012 Gordon Research Conference on Defects in Semiconductors - Formal Schedule and Speaker/Poster Program

    Energy Technology Data Exchange (ETDEWEB)

    Glaser, Evan [Naval Research Lab. (NRL), Washington, DC (United States)

    2012-08-17

    The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

  8. Determination of mode-I cohesive strength for interfaces

    DEFF Research Database (Denmark)

    Jørgensen, J. B.; Thouless, M. D.; Sørensen, Bent F.

    2016-01-01

    The cohesive strength is one of the governing parameters controlling crack deflection at interfaces, but measuring its magnitude is challenging. In this paper, we demonstrate a novel approach to determine the mode-I cohesive strength of an interface by using a 4-point single-edge-notch beam...... in response to this stress, before the main crack starts to grow. Observations using 2D digital-image correlation showed that an ''apparent" strain across the interface initially increases linearly with the applied load, but becomes nonlinear upon the initiation of the interface crack. The cohesive strength...

  9. Characteristics of Non-Cohesive Embankment Failure

    Science.gov (United States)

    Yusof, Z. M.; Wahab, A. K. A.; Ismail, Z.; Amerudin, S.

    2018-04-01

    Embankments are important infrastructure built to provide flood control. They also present risks to property and life due to their potential to fail and cause catastrophic flooding. To mitigate these risks, authorities and regulators need to carefully analyse and inspect dams to identify potential failure modes and protect against them. This paper presents morphology of an embankment study and its sediment behaviour of different grain sizes after the embankment fails. A few experiments were carried out for the embankment size of 1V:3H with different sediment grain sizes; medium and coarser sand. The embankment material used is non-cohesive soil with the embankment height of 0.1 m. The embankment is tested with inflows rate of Q = 0.8 L/s. Experimental results showed the peak discharge for the same inflow rate is affected by the shape of embankment breached. The peak discharge of medium grain size of the embankment is highest, which gave 3.63 L/s in comparison with a coarser embankment. This concludes that the embankment morphology patterns are dissimilar to each other. The flow and dimension of embankment are shown to influence the characteristics of embankment failure.

  10. Auctioning Bulk Mobile Messages

    NARCIS (Netherlands)

    S. Meij (Simon); L-F. Pau (Louis-François); H.W.G.M. van Heck (Eric)

    2003-01-01

    textabstractThe search for enablers of continued growth of SMS traffic, as well as the take-off of the more diversified MMS message contents, open up for enterprises the potential of bulk use of mobile messaging , instead of essentially one-by-one use. In parallel, such enterprises or value added

  11. Diffusion or bulk flow

    DEFF Research Database (Denmark)

    Schulz, Alexander

    2015-01-01

    is currently matter of discussion, called passive symplasmic loading. Based on the limited material available, this review compares the different loading modes and suggests that diffusion is the driving force in apoplasmic loaders, while bulk flow plays an increasing role in plants having a continuous...

  12. Ferromagnetic bulk glassy alloys

    International Nuclear Information System (INIS)

    Inoue, Akihisa; Makino, Akihiro; Mizushima, Takao

    2000-01-01

    This paper deals with the review on the formation, thermal stability and magnetic properties of the Fe-based bulk glassy alloys in as-cast bulk and melt-spun ribbon forms. A large supercooled liquid region over 50 K before crystallization was obtained in Fe-(Al, Ga)-(P, C, B, Si), Fe-(Cr, Mo, Nb)-(Al, Ga)-(P, C, B) and (Fe, Co, Ni)-Zr-M-B (M=Ti, Hf, V, Nb, Ta, Cr, Mo and W) systems and bulk glassy alloys were produced in a thickness range below 2 mm for the Fe-(Al, Ga)-(P, C, B, Si) system and 6 mm for the Fe-Co-(Zr, Nb, Ta)-(Mo, W)-B system by copper-mold casting. The ring-shaped glassy Fe-(Al, Ga)-(P, C, B, Si) alloys exhibit much better soft magnetic properties as compared with the ring-shaped alloy made from the melt-spun ribbon because of the formation of the unique domain structure. The good combination of high glass-forming ability and good soft magnetic properties indicates the possibility of future development as a new bulk glassy magnetic material

  13. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  14. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  15. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  16. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  17. Study of radiation effects on semiconductor devices

    International Nuclear Information System (INIS)

    Kuboyama, Satoshi; Shindou, Hiroyuki; Ikeda, Naomi; Iwata, Yoshiyuki; Murakami, Takeshi

    2004-01-01

    Fine structure of the recent semiconductor devices has made them more sensitive to the space radiation environment with trapped high-energy protons and heavy ions. A new failure mode caused by bulk damage had been reported on such devices with small structure, and its effect on commercial synchronous dynamic random access memory (SDRAMs) was analyzed from the irradiation test results performed at Heavy ion Medical Accelerator in Chiba (HIMAC). Single event upset (SEU) data of static random access memory (SRAMs) were also collected to establish the method of estimating the proton-induced SEU rate from the results of heavy ion irradiation tests. (authors)

  18. Bridge pier scour in cohesive soil: a review

    Indian Academy of Sciences (India)

    Y Sonia Devi

    process and mechanism at bridge pier in cohesive and noncohesive soil are presented. The effects ... examples: one under laboratory condition and another under field condition. ..... not take part in scouring as these sediments are swept over.

  19. Social cohesion: solution or driver of urban violence? | IDRC ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    2016-09-28

    Sep 28, 2016 ... Social cohesion can play an important role in building and maintaining ... Analysis of Violence demonstrates how social bonds and stark inequalities can also play ... Conflict and development in the hill settlements of Guwahati.

  20. Social cohesion: solution or driver of urban violence?

    International Development Research Centre (IDRC) Digital Library (Canada)

    to the state intervention, eroding existing civil society organization. The presence of the police ... creating its own parallel structures to existing representative bodies, ... When designing interventions take into account that social cohesion may ...

  1. Utilization of Large Cohesive Interface Elements for Delamination Simulation

    DEFF Research Database (Denmark)

    Bak, Brian Lau Verndal; Lund, Erik

    2012-01-01

    This paper describes the difficulties of utilizing large interface elements in delamination simulation. Solutions to increase the size of applicable interface elements are described and cover numerical integration of the element and modifications of the cohesive law....

  2. Social cohesion: The missing link in overcoming violence and ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    Researchers will test the hypothesis that social cohesion is a critical factor in ... to community members, and ethnographic social network analysis, to help map ... to identify the most effective strategies for addressing these challenges in Latin ...

  3. Student leadership and advocacy for social cohesion: A South ...

    African Journals Online (AJOL)

    at how social cohesion could benefit economic development, hoped thereby ... institutions pledged to reverse 'outsourcing' to 'insourcing' of cleaning services, there is .... It is not so much the scale of these ills as it is the perceived failure of the.

  4. Effect of softening function on the cohesive crack fracture ...

    Indian Academy of Sciences (India)

    The cohesive crack model with linear softening yields the fracture process zones lower by ..... ignored during numerical simulation. In the crack band ..... performed with developed computer program using MATLAB for the following numerical.

  5. Barossa Night: cohesion in the British Army officer corps.

    Science.gov (United States)

    Bury, Patrick

    2017-06-01

    Contrasting the classical explanation of military group cohesion as sustained by interpersonal bonds, recent scholars have highlighted the importance of ritualized communication, training and drills in explaining effective military performance in professional armies. While this has offered a welcome addition to the cohesion literature and a novel micro-sociological method of examining cohesion, its primary evidential base has been combat groups. Indeed, despite their prominent role in directing operations over the past decade, the British Army's officer corps has received relatively little attention from sociologists during this period. No attempt has been made to explain cohesion in the officer corps. Using a similar method to recent cohesion scholars, this paper seeks to address this imbalance by undertaking a micro-sociology of one ritual in particular: 'Barossa Night' in the Royal Irish Regiment. Firstly, it draws on the work of Durkheim to examine how cohesion amongst the officer corps is created and sustained through a dense array of practises during formal social rituals. It provides evidence that the use of rituals highlights that social solidarity is central to understanding officer cohesion. Secondly, following Hockey's work on how private soldiers negotiate order, the paper shows how this solidarity in the officer corps is based on a degree of negotiated order and the need to release organizational tensions inherent in a strictly hierarchical rank structure. It highlights how the awarding of gallantry medals can threaten this negotiated order and fuel deviancy. In examining this behaviour, the paper shows that even amongst an officer class traditionally viewed as the elite upholders of organizational discipline, the negotiation of rank and hierarchy can be fluid. How deviant behaviour is later accepted and normalized by senior officers indicates that negotiated order is as important to understanding cohesion in the British Army's officer corps as it is

  6. Substitution as a Device of Grammatical Cohesion in English Contexts

    Directory of Open Access Journals (Sweden)

    Mohammad Reza Hasannejad

    2012-05-01

    Full Text Available The present study set out to investigate the effect of teaching substitution as a kind of grammatical cohesion on the true identification of confusing substitution elements with cohesive or non-cohesive roles in different contexts and also the production of modal, reporting and conditional contexts through clausal substitution acquaintance. To this end, the following procedures were taken. First 120 male and female EFL students were selected from Iranshahr Azad University. Having administered the language proficiency test, researchers selected 80 students as intermediate subjects according to their TOEFL band scores. First, pretests of cohesion identification (substitution and production of modal, reporting and conditional environments were administered to both control and experimental groups. Then, the experimental group was exposed to the teaching of the above-said above-mentioned cohesive device. Finally, post-tests of substitution elements’ identification and modal, reporting and conditional contexts’ production through clausal substitution familiarity were administered. The results showed that cohesive device treatment helped students on the true identification of substitution elements. Another finding proved that EFL students might have no difficulty in learning certain rules or classification of rules and application of their clausal substitution knowledge in creating modal, reporting and conditional contexts. Our findings can have implications for the field of language learning and teaching.

  7. Interrelations between EOS parameters and cohesive energy of transition metals: Thermostatistical approach, ab initio calculations and analysis of ;universality; features

    Science.gov (United States)

    Bertoldi, Dalía S.; Ramos, Susana B.; Guillermet, Armando Fernández

    2017-08-01

    We present a theoretical analysis of the equation of state (EOS) of metals using a quasi-harmonic Einstein model with a dimensionless cohesive energy versus distance function (F(z)) involving the Wigner-Seitz radius and a material-dependent scaling length, as suggested in classical works by Rose, Ferrante, Smith and collaborators. Using this model, and "universal" values for the function and its first and second derivatives at the equilibrium distance (z=0), three general interrelations between EOS parameters and the cohesive energy are obtained. The first correlation involves the bulk modulus, and the second, the thermal expansion coefficient. In order to test these results an extensive database is developed, which involves available experimental data, and results of current ab initio density-functional-theory calculations using the VASP code. In particular, the 0 K values for volume, bulk modulus, its pressure derivative, and the cohesive energy of 27 elements belonging to the first (Sc, Ti, V, Cr, Fe, Co, Ni, Cu, Zn), second (Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd) and third (Hf, Ta, W, Re, Os, Ir, Pt, Au) transition row of the Periodic Table are calculated ab initio and used to test the present results. The third correlation obtained, allows an evaluation of the third derivative of F(z) at z=0 for the current elements. With this new information, a discussion is presented of the possibility of finding a "universal" F(z) versus z function able to account accurately for the pressure derivative of the bulk modulus of the transition elements.

  8. Novel room temperature ferromagnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

    2004-06-01

    Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous

  9. Characterisation of bulk solids

    Energy Technology Data Exchange (ETDEWEB)

    D. McGlinchey [Glasgow Caledonian University, Glasgow (United Kingdom). Centre for Industrial Bulk Solids Handling

    2005-07-01

    Handling of powders and bulk solids is a critical industrial technology across a broad spectrum of industries, including minerals processing. With contributions from leading authors in their respective fields, this book provides the reader with a sound understanding of the techniques, importance and application of particulate materials characterisation. It covers the fundamental characteristics of individual particles and bulk particulate materials, and includes discussion of a wide range of measurement techniques, and the use of material characteristics in design and industrial practice. Contents: Characterising particle properties; Powder mechanics and rheology; Characterisation for hopper and stockpile design; Fluidization behaviour; Characterisation for pneumatic conveyor design; Explosiblility; 'Designer' particle characteristics; Current industrial practice; and Future trends. 130 ills.

  10. Micromegas in a bulk

    International Nuclear Information System (INIS)

    Giomataris, I.; De Oliveira, R.; Andriamonje, S.; Aune, S.; Charpak, G.; Colas, P.; Fanourakis, G.; Ferrer, E.; Giganon, A.; Rebourgeard, Ph.; Salin, P.

    2006-01-01

    In this paper, we present a novel way to manufacture the bulk Micromegas detector. A simple process based on the Printed Circuit Board (PCB) technology is employed to produce the entire sensitive detector. Such a fabrication process could be extended to very large area detectors made by the industry. The low cost fabrication together with the robustness of the electrode materials will make it attractive for several applications ranging from particle physics and astrophysics to medicine

  11. Investigation of porosity and fractal properties of the sintered metal and semiconductor layers in the MDS capacitor structure

    Directory of Open Access Journals (Sweden)

    Skatkov Leonid

    2012-01-01

    Full Text Available MDS capacitor (metal - dielectric - semiconductor is a structure in which metal plate is represented by compact bulk-porous pellets of niobium sintered powder, and semiconductor plate - by pyrolytic layer of MnO2. In the present paper we report the results of investigation of microporosity of sintered Nb and pyrolytic MnO2 and also the fractal properties of semiconductor layer.

  12. Gain dynamics and saturation in semiconductor quantum dot amplifiers

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Mørk, Jesper; Hvam, Jørn Märcher

    2004-01-01

    Quantum dot (QD)-based semiconductor optical amplifiers offer unique properties compared with conventional devices based on bulk or quantum well material. Due to the bandfilling properties of QDs and the existence of a nearby reservoir of carriers in the form of a wetting layer, QD semiconductor...... optical amplifiers may be operated in regimes of high linearity, i.e. with a high saturation power, but can also show strong and fast nonlinearities by breaking the equilibrium between discrete dot states and the continuum of wetting layer states. In this paper, we analyse the interplay of these two...

  13. Multiscale structure, interfacial cohesion, adsorbed layers, miscibility and properties in dense polymer-particle mixtures

    Science.gov (United States)

    Schweizer, Ken

    2012-02-01

    A major goal in polymer nanocomposite research is to understand and predict how the chemical and physical nature of individual polymers and nanoparticles, and thermodynamic state (temperature, composition, solvent dilution, filler loading), determine bulk assembly, miscibility and properties. Microscopic PRISM theory provides a route to this goal for equilibrium disordered mixtures. A major prediction is that by manipulating the net polymer-particle interfacial attraction, miscibility is realizable via the formation of thin thermodynamically stable adsorbed layers, which, however, are destroyed by entropic depletion and bridging attraction effects if interface cohesion is too weak or strong, respectively. This and related issues are quantitatively explored for miscible mixtures of hydrocarbon polymers, silica nanospheres, and solvent using x-ray scattering, neutron scattering and rheology. Under melt conditions, quantitative agreement between theory and silica scattering experiments is achieved under both steric stabilization and weak depletion conditions. Using contrast matching neutron scattering to characterize the collective structure factors of polymers, particles and their interface, the existence and size of adsorbed polymer layers, and their consequences on microstructure, is determined. Failure of the incompressible RPA, accuracy of PRISM theory, the nm thickness of adsorbed layers, and qualitative sensitivity of the bulk modulus to interfacial cohesion and particle size are demonstrated for concentrated PEO-silica-ethanol nanocomposites. Temperature-dependent complexity is discovered when water is the solvent, and nonequilibrium effects emerge for adsorbing entangled polymers that strongly impact structure. By varying polymer chemistry, the effect of polymer-particle attraction on the intrinsic viscosity is explored with striking non-classical effects observed. This work was performed in collaboration with S.Y.Kim, L.M.Hall, C.Zukoski and B.Anderson.

  14. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  15. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  16. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  17. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  18. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  19. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  20. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  1. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  2. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  3. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  4. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  5. Britishness and Community Cohesion in Muslim News Online

    Directory of Open Access Journals (Sweden)

    Hassen ZRIBA

    2013-12-01

    Full Text Available The issues of British national identity and social cohesion have become pressing concerns within the multicultural fabric of contemporary British society. The increasing number of immigrants and their offspring, along with the maintenance of their cultural roots, seem to represent a serious defiance to social cohesion and the alleged “purity” of Britishness. A number of race related reports were produced by the official authorities to churn out the necessary steps to be followed by the British (immigrants and host community in order to keep social stability and community cohesion. Thus, the politics of community cohesion came to the fore as the neologism of contemporary British political discourse. Such new discourse of governance has been digested and processed differently by different mass media. It has been decoded, for instance, preferably by mainstream news agencies like BBC News Online. However, arguably, it is read appositionally or at best negotiatedly by ethnicity-related news agencies such as Muslim News Online. In this article, attempt has been made to adopt media discourse analysis tools to decipher the ways Muslim News Online decoded and then encoded the hegemonic official discourses of Britishness and community cohesion. A critical and interpretative approach is used to accomplish such study. The corpus of this study is primarily extracted from the website of the Muslim News Online.

  6. Transport and deposition of cohesive pharmaceutical powders in human airway

    Directory of Open Access Journals (Sweden)

    Wang Yuan

    2017-01-01

    Full Text Available Pharmaceutical powders used in inhalation therapy are in the size range of 1-5 microns and are usually cohesive. Understanding the cohesive behaviour of pharmaceutical powders during their transportation in human airway is significant in optimising aerosol drug delivery and targeting. In this study, the transport and deposition of cohesive pharmaceutical powders in a human airway model is simulated by a well-established numerical model which combines computational fluid dynamics (CFD and discrete element method (DEM. The van der Waals force, as the dominant cohesive force, is simulated and its influence on particle transport and deposition behaviour is discussed. It is observed that even for dilute particle flow, the local particle concentration in the oral to trachea region can be high and particle aggregation happens due to the van der Waals force of attraction. It is concluded that the deposition mechanism for cohesive pharmaceutical powders, on one hand, is dominated by particle inertial impaction, as proven by previous studies; on the other hand, is significantly affected by particle aggregation induced by van der Waals force. To maximum respiratory drug delivery efficiency, efforts should be made to avoid pharmaceutical powder aggregation in human oral-to-trachea airway.

  7. Transport and deposition of cohesive pharmaceutical powders in human airway

    Science.gov (United States)

    Wang, Yuan; Chu, Kaiwei; Yu, Aibing

    2017-06-01

    Pharmaceutical powders used in inhalation therapy are in the size range of 1-5 microns and are usually cohesive. Understanding the cohesive behaviour of pharmaceutical powders during their transportation in human airway is significant in optimising aerosol drug delivery and targeting. In this study, the transport and deposition of cohesive pharmaceutical powders in a human airway model is simulated by a well-established numerical model which combines computational fluid dynamics (CFD) and discrete element method (DEM). The van der Waals force, as the dominant cohesive force, is simulated and its influence on particle transport and deposition behaviour is discussed. It is observed that even for dilute particle flow, the local particle concentration in the oral to trachea region can be high and particle aggregation happens due to the van der Waals force of attraction. It is concluded that the deposition mechanism for cohesive pharmaceutical powders, on one hand, is dominated by particle inertial impaction, as proven by previous studies; on the other hand, is significantly affected by particle aggregation induced by van der Waals force. To maximum respiratory drug delivery efficiency, efforts should be made to avoid pharmaceutical powder aggregation in human oral-to-trachea airway.

  8. Tunable radiation emitting semiconductor device

    NARCIS (Netherlands)

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  9. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  10. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  11. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  12. Depletion field focusing in semiconductors

    NARCIS (Netherlands)

    Prins, M.W.J.; Gelder, Van A.P.

    1996-01-01

    We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

  13. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  14. Semi-conductor rectifiers

    International Nuclear Information System (INIS)

    1981-01-01

    A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

  15. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  16. Cohesiveness in financial news and its relation to market volatility.

    Science.gov (United States)

    Piškorec, Matija; Antulov-Fantulin, Nino; Novak, Petra Kralj; Mozetič, Igor; Grčar, Miha; Vodenska, Irena; Smuc, Tomislav

    2014-05-22

    Motivated by recent financial crises, significant research efforts have been put into studying contagion effects and herding behaviour in financial markets. Much less has been said regarding the influence of financial news on financial markets. We propose a novel measure of collective behaviour based on financial news on the Web, the News Cohesiveness Index (NCI), and we demonstrate that the index can be used as a financial market volatility indicator. We evaluate the NCI using financial documents from large Web news sources on a daily basis from October 2011 to July 2013 and analyse the interplay between financial markets and finance-related news. We hypothesise that strong cohesion in financial news reflects movements in the financial markets. Our results indicate that cohesiveness in financial news is highly correlated with and driven by volatility in financial markets.

  17. Cohesiveness in Financial News and its Relation to Market Volatility

    Science.gov (United States)

    Piškorec, Matija; Antulov-Fantulin, Nino; Novak, Petra Kralj; Mozetič, Igor; Grčar, Miha; Vodenska, Irena; Šmuc, Tomislav

    2014-01-01

    Motivated by recent financial crises, significant research efforts have been put into studying contagion effects and herding behaviour in financial markets. Much less has been said regarding the influence of financial news on financial markets. We propose a novel measure of collective behaviour based on financial news on the Web, the News Cohesiveness Index (NCI), and we demonstrate that the index can be used as a financial market volatility indicator. We evaluate the NCI using financial documents from large Web news sources on a daily basis from October 2011 to July 2013 and analyse the interplay between financial markets and finance-related news. We hypothesise that strong cohesion in financial news reflects movements in the financial markets. Our results indicate that cohesiveness in financial news is highly correlated with and driven by volatility in financial markets. PMID:24849598

  18. The effect of biological cohesion on current ripple development

    Science.gov (United States)

    Malarkey, Jonathan; Baas, Jaco H.; Hope, Julie

    2014-05-01

    Results are presented from laboratory experiments examining the role of biological cohesion, associated with Extra Polymeric Substances, on the development of current ripples. The results demonstrate the importance of biological cohesion compared to the effect of physical cohesion associated with clays in an otherwise sandy bed. FURTHER INFORMATION In fluvial and marine environments sediment transport is mainly dependent on the nature of the bed surface (rippled or flat) and the nature of cohesion in the bed. Cohesion can be either physical, as a result of the presence of clays, or biological as a result of the presence of organisms. In the case of the latter, biological cohesion occurs as a result of the presence of Extra Polymeric Substances (EPS) secreted by microorganisms. While it is known that EPS can dramatically increase the threshold of motion (Grant and Gust, 1987), comparatively little is known about the effect of EPS on ripple formation and development. The experiments described here seek to fill this gap. They also allow the effect of biological cohesion to be compared with that of physical cohesion from previous experiments (Baas et al., 2013). The experiments, which were conducted in a 10m flume at Bangor University, involved a current over a bed made of fine sand, with a median diameter of 0.148mm, and various amounts of xanthan gum, a proxy for naturally occurring EPS (Vardy et al., 2007). The hydrodynamic experimental conditions were matched very closely to those of Baas et al. (2013). The ripple dimensions were recorded through the glass side wall of the tank using time lapse photography. In the physical cohesion experiments of Baas et al. (2013) for clay contents up to 12%, the clay was very quickly winnowed out of the bed, leaving essentially clay-free ripples that developed at more or less the same rate as clean sand ripples. The resulting equilibrium ripples were essentially the same length as the clean sand ripples but reduced in height. By

  19. Bulk-Fill Resin Composites

    DEFF Research Database (Denmark)

    Benetti, Ana Raquel; Havndrup-Pedersen, Cæcilie; Honoré, Daniel

    2015-01-01

    the restorative procedure. The aim of this study, therefore, was to compare the depth of cure, polymerization contraction, and gap formation in bulk-fill resin composites with those of a conventional resin composite. To achieve this, the depth of cure was assessed in accordance with the International Organization...... for Standardization 4049 standard, and the polymerization contraction was determined using the bonded-disc method. The gap formation was measured at the dentin margin of Class II cavities. Five bulk-fill resin composites were investigated: two high-viscosity (Tetric EvoCeram Bulk Fill, SonicFill) and three low......-viscosity (x-tra base, Venus Bulk Fill, SDR) materials. Compared with the conventional resin composite, the high-viscosity bulk-fill materials exhibited only a small increase (but significant for Tetric EvoCeram Bulk Fill) in depth of cure and polymerization contraction, whereas the low-viscosity bulk...

  20. Thermal characterization of semiconducting polymer bulk heterojunctions

    Science.gov (United States)

    Remy, Roddel A.

    Polymer semiconductors are intriguing due to their potential use in flexible electronics. Poly (3-hexylthiophene) (P3HT)--a very common polymer in this field--is semicrystalline and it is known that crystalline P3HT has a higher hole mobility than amorphous P3HT. Quantifying each fraction in the bulk and thin film states is therefore crucial to understanding its performance in transistor and other applications. In polymer solar cells, it acts as an electron donor and is typically mixed with the nanoparticle-like molecule, phenyl-C61-butyric acid methyl ester (PCBM)--an electron acceptor--in a thin film morphology termed a bulk heterojunction (BHJ). The structural hierarchy within the bulk heterojunction is complicated and its characterization, with a focus on P3HT morphology, is the topic of this dissertation. Calorimetry can play an important role in the elucidation of P3HT morphology with quantitative analysis of the crystalline and amorphous fractions present in the material. This was demonstrated by employing differential scanning calorimetry (DSC) to obtain the enthalpy of fusion of 100% crystalline P3HT (42.9 J/g) using oligomeric P3HT measurements. The more sensitive temperature modulated DSC (TMDSC) was then used to examine the glass transition of P3HT and the crystalline, mobile amorphous and rigid amorphous phases were quantified. The presence of these phases can play a large role in understanding the charge transfer process in polymer semiconductors. BHJ thin films of 50 wt.% PCBM were then analyzed and a polymer crystallinity of 30% was found after thermal annealing from initially non-crystalline polymer material. With assistance from previously acquired small angle neutron scattering data, a thorough analysis of the entire BHJ morphology was accomplished. A surprisingly large rigid amorphous polymer phase is present in the BHJ which could be located at the P3HT/PCBM interface, affecting charge transfer. Finally, interlayer diffusion of PCBM was

  1. Cathodoluminescence of semiconductors in the scanning electron microscope

    International Nuclear Information System (INIS)

    Noriegas, Javier Piqueras de

    2008-01-01

    Full text: Cathodoluminescence (CL) in the scanning electron microscope (SEM) is a nondestructive technique, useful for characterization of optical and electronic properties of semiconductors, with spatial resolution. The contrast in the images of CL is related to the presence of crystalline defects, precipitates or impurities and provides information on their spatial distribution. CL spectra allows to study local energy position of localized electronic states. The application of the CL is extended to semiconductor very different characteristics, such as bulk material, heterostructures, nanocrystalline film, porous semiconductor, nanocrystals, nanowires and other nano-and microstructures. In the case of wafers, provides information on the homogeneity of their electronic characteristics, density of dislocations, grain sub frontiers, distribution of impurities and so on. while on the study of heterostructures CL images can determine, for example, the presence of misfit dislocations at the interface between different sheets, below the outer surface of the sample. In the study of other low dimensional structures, such as nanocrystalline films, nanoparticles and nano-and microstructures are observed elongated in some cases quantum confinement effects from the CL spectra. Moreover, larger structures, the order of hundreds of nanometers, with forms of wires, tubes or strips, is that in many semiconductor materials, mainly oxides, the behavior of luminescence is different from bulk material. The microstructures have a different structure of defects and a greater influence of the surface, which in some cases leads to a higher emission efficiency and a different spectral distribution. The presentation describes the principle of the CL technique and examples of its application in the characterization of a wide range of both semiconductor materials of different composition, and of different sizes ranging from nanostructures to bulk samples

  2. Elongational rheology and cohesive fracture of photo-oxidated LDPE

    Energy Technology Data Exchange (ETDEWEB)

    Rolón-Garrido, Víctor H., E-mail: victor.h.rolongarrido@tu-berlin.de; Wagner, Manfred H. [Chair of Polymer Engineering/Polymer Physics, Berlin Institute of Technology (TU Berlin), Fasanenstrasse 90, D-10623 Berlin (Germany)

    2014-01-15

    It was found recently that low-density polyethylene (LDPE) samples with different degrees of photo-oxidation represent an interesting system to study the transition from ductile to cohesive fracture and the aspects of the cohesive rupture in elongational flow. Sheets of LDPE were subjected to photo-oxidation in the presence of air using a xenon lamp to irradiate the samples for times between 1 day and 6 weeks. Characterisation methods included Fourier transform infrared spectroscopy, solvent extraction method, and rheology in shear and uniaxial extensional flows. Linear viscoelasticity was increasingly affected by increasing photo-oxidation due to crosslinking of LDPE, as corroborated by the carbonyl index, acid and aldehydes groups, and gel fraction. The molecular stress function model was used to quantify the experimental data, and the nonlinear model parameter β was found to be correlated with the gel content. The uniaxial data showed that the transition from ductile to cohesive fracture was shifted to lower elongational rates, the higher the gel content was. From 2 weeks photo-oxidation onwards, cohesive rupture occurred at every strain rate investigated. The true strain and true stress at cohesive fracture as well as the energy density applied to the sample up to fracture were analyzed. At low gel content, rupture was mainly determined by the melt fraction while at high gel content, rupture occurred predominantly in the gel structure. The strain at break was found to be independent of strain rate, contrary to the stress at break and the energy density. Thus, the true strain and not the stress at break or the energy density was found to be the relevant physical quantity to describe cohesive fracture behavior of photo-oxidated LDPE. The equilibrium modulus of the gel structures was correlated with the true strain at rupture. The stiffer the gel structure, the lower was the deformation tolerated before the sample breaks.

  3. OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES

    Energy Technology Data Exchange (ETDEWEB)

    Grant, C D; Zhang, J Z

    2007-09-28

    This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

  4. Direct observation of triplet energy transfer from semiconductor nanocrystals.

    Science.gov (United States)

    Mongin, Cédric; Garakyaraghi, Sofia; Razgoniaeva, Natalia; Zamkov, Mikhail; Castellano, Felix N

    2016-01-22

    Triplet excitons are pervasive in both organic and inorganic semiconductors but generally remain confined to the material in which they originate. We demonstrated by transient absorption spectroscopy that cadmium selenide semiconductor nanoparticles, selectively excited by green light, engage in interfacial Dexter-like triplet-triplet energy transfer with surface-anchored polyaromatic carboxylic acid acceptors, extending the excited-state lifetime by six orders of magnitude. Net triplet energy transfer also occurs from surface acceptors to freely diffusing molecular solutes, further extending the lifetime while sensitizing singlet oxygen in an aerated solution. The successful translation of triplet excitons from semiconductor nanoparticles to the bulk solution implies that such materials are generally effective surrogates for molecular triplets. The nanoparticles could thereby potentially sensitize a range of chemical transformations that are relevant for fields as diverse as optoelectronics, solar energy conversion, and photobiology. Copyright © 2016, American Association for the Advancement of Science.

  5. Group cohesion in sports teams of different professional level

    Directory of Open Access Journals (Sweden)

    Vazha M. Devishvili

    2017-12-01

    Full Text Available Background. Team sports are not only the most exciting sporting events. but also complex activities that make serious demands on players. The effectiveness of the team depends not only on the high level of gaming interaction. but also on the relationship between the players. The work is based on the material of sports teams and is devoted to the study of the phenomenon of group cohesion. As a basic model. the authors choose a 4-factor model that describes cohesion in sports teams. The paper also considered the phenomenon of the emergence of the aggregate subject in the process of joint activity. when the participants feel themselves as a whole and experience feelings of satisfaction and a surge of energy. Objective. The main objective of the work is to investigate the relationship between the level of team cohesion and subjective feelings of unity of its players. As additional variables in the study there is a sport (football and volleyball and team level (amateur and professional. To test the assumptions. two methods were used (the Sport Team Cohesion Questionnaire and the Subject Unity Index. which allow not only to determine the overall level of cohesion and unity. but also to reveal the structure of both phenomena. The study involved two men’s volleyball and two men’s football teams of different ages: 8-9 years (39 athletes; 12-14 years (24 athletes and 18-25 years (41 athletes. Design. For amateur groups represented by children’s and teenage sports teams. significant correlations between unity and unity were obtained (r = 0.618. p <0.01; r = 0.477. p <0.05. For professional teams. no significant correlations were found. Influence of the sport on cohesion is also different for amateur and professional teams. In the first case. the cohesion is higher for football players (U = 118. p <0.05. and in the second case for volleyball players (U = 124. p <0.05. Results. The findings indicate that the professional level of players affects group

  6. Group cohesion in sports teams of different professional level

    OpenAIRE

    Vazha M. Devishvili; Marina O. Mdivani; Daria S. Elgina

    2017-01-01

    Background. Team sports are not only the most exciting sporting events. but also complex activities that make serious demands on players. The effectiveness of the team depends not only on the high level of gaming interaction. but also on the relationship between the players. The work is based on the material of sports teams and is devoted to the study of the phenomenon of group cohesion. As a basic model. the authors choose a 4-factor model that describes cohesion in sports teams. The pape...

  7. On the application of cohesive crack modeling in cementitious materials

    DEFF Research Database (Denmark)

    Stang, Henrik; Olesen, John Forbes; Poulsen, Peter Noe

    2007-01-01

    typically for multi scale problems such as crack propagation in fiber reinforced composites. Mortar and concrete, however, are multi-scale materials and the question naturally arises, if bridged crack models in fact are more suitable for concrete and mortar as well? In trying to answer this question a model......Cohesive crack models-in particular the Fictitious Crack Model - are applied routinely in the analysis of crack propagation in concrete and mortar. Bridged crack models-where cohesive stresses are assumed to exist together with a stress singularity at the crack tip-on the other hand, are used...

  8. Method for making graded I-III-VI.sub.2 semiconductors and solar cell obtained thereby

    Science.gov (United States)

    Devaney, Walter E.

    1987-08-04

    Improved cell photovoltaic conversion efficiencies are obtained by the simultaneous elemental reactive evaporation process of Mickelsen and Chen for making semiconductors by closer control of the evaporation rates and substrate temperature during formation of the near contact, bulk, and near junction regions of a graded I-III-VI.sub.2, thin film, semiconductor, such as CuInSe.sub.2 /(Zn,Cd)S or another I-III-VI.sub.2 /II-VI heterojunction.

  9. Bulk muscles, loose cables.

    Science.gov (United States)

    Liyanage, Chamari R D G; Kodali, Venkata

    2014-10-17

    The accessibility and usage of body building supplements is on the rise with stronger internet marketing strategies by the industry. The dangers posed by the ingredients in them are underestimated. A healthy young man came to the emergency room with palpitations and feeling unwell. Initial history and clinical examination were non-contributory to find the cause. ECG showed atrial fibrillation. A detailed history for any over the counter or herbal medicine use confirmed that he was taking supplements to bulk muscle. One of the components in these supplements is yohimbine; the onset of symptoms coincided with the ingestion of this product and the patient is symptom free after stopping it. This report highlights the dangers to the public of consuming over the counter products with unknown ingredients and the consequential detrimental impact on health. 2014 BMJ Publishing Group Ltd.

  10. The role of contacts in semiconductor gamma radiation detectors

    International Nuclear Information System (INIS)

    Lachish, U.

    1998-01-01

    It is proposed that the operation of semiconductor gamma radiation detectors, equipped with ohmic contacts, which allow free electron flow between the contacts and bulk material, will not be sensitive to low hole mobility, hole collection efficiency, or hole trapping. Such fast-operating detectors may be readily integrated into monolithic arrays. The detection mechanism and various material aspects are discussed and compared to those of blocking contact detectors. Some suggestions for detector realization are presented. (orig.)

  11. INTERACTIVE EFFECTS OF TEAM COHESION ON PERCEIVED EFFICACY IN SEMI-PROFESSIONAL SPORT

    Directory of Open Access Journals (Sweden)

    Francisco Miguel Leo Marcos

    2010-06-01

    Full Text Available The present study examined the relationships among cohesion, self-efficacy, coaches' perceptions of their players' efficacy at the individual level and athletes' perceptions of their teammates' efficacy. Participants (n = 76 recruited from four semi- professional soccer and basketball teams completed cohesiveness and efficacy questionnaires who. Data were analyzed through a correlational methodology. Results indicated significant correlations between self-efficacy and task cohesion and social cohesion. Regression analysis results suggest task cohesion positively related to coaches and teammate´s perception of efficacy. These results have implications for practitioners in terms of the importance of team building to enhance team cohesion and feelings of efficacy

  12. Cohesion between two clay lamellae: From Primitive Model to Full Molecular Simulation

    International Nuclear Information System (INIS)

    Carrier, Benoit; Vandamme, Matthieu; Pellenq, Roland; Van Damme, Henri

    2012-01-01

    Document available in extended abstract form only. The objective of this work is to investigate the range of validity of various models to describe accurately the cohesion between two charged clay lamellae. These models, in order of increasing complexity, are the Derjaguin-Landau-Verwey-Overbeek (DLVO) theory, the primitive model, the explicit solvent primitive model and the full molecular model. We aim at providing a clear picture of which physical mechanisms play a significant role for various interlayer spacings, surface charges and cationic charges. The up-scaling of the mechanical properties starting from the lamellar microstructure of a smectite is usually performed within the framework of the DLVO theory. In this case, the interaction between two charged lamellae with cations between them is the sum of the repulsive double layer electrostatic interaction and of the attractive Van der Waals interaction. However, the Primitive Model shows that concentration fluctuations of counter-ions can generate a strongly attractive ionic correlation force. The Primitive Model is a Monte-Carlo simulation of hydrated counter-ions between two infinite charges surfaces and the water is implicitly modeled by scaling all electrostatic interactions by the dielectric permittivity of bulk water. Nevertheless, for very small inter-layer spacings (1 nm), molecular simulations and experiments show that water is organized in a layered structure and does not behave like bulk water. Therefore, we investigate the role of the solvent in the cohesion of clay lamellae. For this purpose, we use a modified version of the original Primitive Model in which the solvent is modeled by point-dipoles: This model is called the Explicit Solvent Primitive Model. We consider four different systems: A Na + -montmorillonite, a Ca 2+ -montmorillonite, a Na + -vermiculite, a Ca 2+ -vermiculite. The vermiculite layers are twice as charged as the montmorillonite layers. We use a full molecular model as a

  13. Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system

    Science.gov (United States)

    Charache, Greg W.; Baldasaro, Paul F.; Nichols, Greg J.

    1998-01-01

    A thermophotovoltaic energy conversion device and a method for making the device. The device includes a substrate formed from a bulk single crystal material having a bandgap (E.sub.g) of 0.4 eVternary or quaternary III-V semiconductor active layers.

  14. Phase transitions and doping in semiconductor nanocrystals

    Science.gov (United States)

    Sahu, Ayaskanta

    impurities (or doping) allows further control over the electrical and optical properties of nanocrystals. However, while impurity doping in bulk semiconductors is now routine, doping of nanocrystals remains challenging. In particular, evidence for electronic doping, in which additional electrical carriers are introduced into the nanocrystals, has been very limited. Here, we adopt a new approach to electronic doping of nanocrystals. We utilize a partial cation exchange to introduce silver impurities into cadmium selenide (CdSe) and lead selenide (PbSe) nanocrystals. Results indicate that the silver-doped CdSe nanocrystals show a significant increase in fluorescence intensity, as compared to pure CdSe nanocrystals. We also observe a switching from n- to p-type doping in the silver-doped CdSe nanocrystals with increased silver amounts. Moreover, the silver-doping results in a change in the conductance of both PbSe and CdSe nanocrystals and the magnitude of this change depends on the amount of silver incorporated into the nanocrystals. In the bulk, silver chalcogenides (Ag2E, E=S, Se, and Te) possess a wide array of intriguing properties, including superionic conductivity. In addition, they undergo a reversible temperature-dependent phase transition which induces significant changes in their electronic and ionic properties. While most of these properties have been examined extensively in bulk, very few studies have been conducted at the nanoscale. We have recently developed a versatile synthesis that yields colloidal silver chalcogenide nanocrystals. Here, we study the size dependence of their phase-transition temperatures. We utilize differential scanning calorimetry and in-situ X-ray diffraction analyses to observe the phase transition in nanocrystal assemblies. We observe a significant deviation from the bulk alpha (low-temperature) to beta (high-temperature) phase-transition temperature when we reduce their size to a few nanometers. Hence, these nanocrystals provide great

  15. Microfabricated Bulk Piezoelectric Transformers

    Science.gov (United States)

    Barham, Oliver M.

    Piezoelectric voltage transformers (PTs) can be used to transform an input voltage into a different, required output voltage needed in electronic and electro- mechanical systems, among other varied uses. On the macro scale, they have been commercialized in electronics powering consumer laptop liquid crystal displays, and compete with an older, more prevalent technology, inductive electromagnetic volt- age transformers (EMTs). The present work investigates PTs on smaller size scales that are currently in the academic research sphere, with an eye towards applications including micro-robotics and other small-scale electronic and electromechanical sys- tems. PTs and EMTs are compared on the basis of power and energy density, with PTs trending towards higher values of power and energy density, comparatively, indicating their suitability for small-scale systems. Among PT topologies, bulk disc-type PTs, operating in their fundamental radial extension mode, and free-free beam PTs, operating in their fundamental length extensional mode, are good can- didates for microfabrication and are considered here. Analytical modeling based on the Extended Hamilton Method is used to predict device performance and integrate mechanical tethering as a boundary condition. This model differs from previous PT models in that the electric enthalpy is used to derive constituent equations of motion with Hamilton's Method, and therefore this approach is also more generally applica- ble to other piezoelectric systems outside of the present work. Prototype devices are microfabricated using a two mask process consisting of traditional photolithography combined with micropowder blasting, and are tested with various output electri- cal loads. 4mm diameter tethered disc PTs on the order of .002cm. 3 , two orders smaller than the bulk PT literature, had the followingperformance: a prototype with electrode area ratio (input area / output area) = 1 had peak gain of 2.3 (+/- 0.1), efficiency of 33 (+/- 0

  16. Long Fibre Composite Modelling Using Cohesive User's Element

    International Nuclear Information System (INIS)

    Kozak, Vladislav; Chlup, Zdenek

    2010-01-01

    The development glass matrix composites reinforced by unidirectional long ceramic fibre has resulted in a family of very perspective structural materials. The only disadvantage of such materials is relatively high brittleness at room temperature. The main micromechanisms acting as toughening mechanism are the pull out, crack bridging, matrix cracking. There are other mechanisms as crack deflection etc. but the primer mechanism is mentioned pull out which is governed by interface between fibre and matrix. The contribution shows a way how to predict and/or optimise mechanical behaviour of composite by application of cohesive zone method and write user's cohesive element into the FEM numerical package Abaqus. The presented results from numerical calculations are compared with experimental data. Crack extension is simulated by means of element extinction algorithms. The principal effort is concentrated on the application of the cohesive zone model with the special traction separation (bridging) law and on the cohesive zone modelling. Determination of micro-mechanical parameters is based on the combination of static tests, microscopic observations and numerical calibration procedures.

  17. Coach-Initiated Motivational Climate and Cohesion in Youth Sport

    Science.gov (United States)

    Eys, Mark A.; Jewitt, Eryn; Evans, M. Blair; Wolf, Svenja; Bruner, Mark W.; Loughead, Todd M.

    2013-01-01

    Purpose: The general purpose of the present study was to examine the link between cohesion and motivational climate in youth sport. The first specific objective was to determine if relationships demonstrated in previous research with adult basketball and handball participants would be replicated in a younger sample and with a more heterogeneous…

  18. Examining the Relationship between Emotional Intelligence and Group Cohesion

    Science.gov (United States)

    Moore, Amanda; Mamiseishvili, Ketevan

    2012-01-01

    Collaborative learning experiences increase student learning, but what happens when students fail to collaborate? The authors investigated the relationship between emotional intelligence and group cohesion by studying 44 undergraduate teams who were completing semester-long projects in their business classes at a small private university in the…

  19. Fear, crime, and social cohesion in urban South Africa | IDRC ...

    International Development Research Centre (IDRC) Digital Library (Canada)

    2016-12-13

    Dec 13, 2016 ... Social cohesion” broadly refers to the factors that hold a society ... published in March 2016, explores the role of social cohesion and ... Learn more about IDRC's research support to make cities safer through the Safe and Inclusive Cities partnership with the UK's Department for International Development.

  20. Isotropic compression of cohesive-frictional particles with rolling resistance

    NARCIS (Netherlands)

    Luding, Stefan; Benz, Thomas; Nordal, Steinar

    2010-01-01

    Cohesive-frictional and rough powders are the subject of this study. The behavior under isotropic compression is examined for different material properties involving Coulomb friction, rolling-resistance and contact-adhesion. Under isotropic compression, the density continuously increases according

  1. ReaderBench: An Integrated Cohesion-Centered Framework

    NARCIS (Netherlands)

    Dascalu, Mihai; Stavarache, Lucia Larise; Dessus, Philippe; Trausan-Matu, Stefan; McNamara, Danielle S.; Bianco, Maryse

    2015-01-01

    Dascalu, M., Stavarache, L.L., Dessus, P., Trausan-Matu, S., McNamara, D.S., & Bianco, M. (2015). ReaderBench: An Integrated Cohesion-Centered Framework. In G. Conole, T. Klobucar, C. Rensing, J. Konert & É. Lavoué (Eds.), 10th European Conf. on Technology Enhanced Learning (pp. 505–508). Toledo,

  2. Teacher Governance Factors and Social Cohesion: Insights from Pakistan

    Science.gov (United States)

    Halai, Anjum; Durrani, Naureen

    2016-01-01

    This paper explores teacher governance factors, particularly recruitment and deployment of teachers, in relation to inequalities and social cohesion. Pakistan introduced major reforms in education in the post 9/11 context of escalating conflict. These include a merit and needs-based policy on teacher recruitment to eliminate corruption in…

  3. Cohesion and coordination effects on transition metal surface energies

    Science.gov (United States)

    Ruvireta, Judit; Vega, Lorena; Viñes, Francesc

    2017-10-01

    Here we explore the accuracy of Stefan equation and broken-bond model semiempirical approaches to obtain surface energies on transition metals. Cohesive factors are accounted for either via the vaporization enthalpies, as proposed in Stefan equation, or via cohesive energies, as employed in the broken-bond model. Coordination effects are considered including the saturation degree, as suggested in Stefan equation, employing Coordination Numbers (CN), or as the ratio of broken bonds, according to the bond-cutting model, considering as well the square root dependency of the bond strength on CN. Further, generalized coordination numbers CN bar are contemplated as well, exploring a total number of 12 semiempirical formulations on the three most densely packed surfaces of 3d, 4d, and 5d Transition Metals (TMs) displaying face-centered cubic (fcc), body-centered cubic (bcc), or hexagonal close-packed (hcp) crystallographic structures. Estimates are compared to available experimental surface energies obtained extrapolated to zero temperature. Results reveal that Stefan formula cohesive and coordination dependencies are only qualitative suited, but unadvised for quantitative discussion, as surface energies are highly overestimated, favoring in addition the stability of under-coordinated surfaces. Broken-bond cohesion and coordination dependencies are a suited basis for quantitative comparison, where square-root dependencies on CN to account for bond weakening are sensibly worse. An analysis using Wulff shaped averaged surface energies suggests the employment of broken-bond model using CN to gain surface energies for TMs, likely applicable to other metals.

  4. An enriched cohesive zone model for delamination in brittle interfaces

    NARCIS (Netherlands)

    Samimi, M.; Dommelen, van J.A.W.; Geers, M.G.D.

    2009-01-01

    Application of standard cohesive zone models in a finite element framework to simulate delamination in brittle interfaces may trigger non-smooth load-displacement responses that lead to the failure of iterative solution procedures. This non-smoothness is an artifact of the discretization; and hence

  5. Interfacial stresses in strengthened beam with shear cohesive zone ...

    Indian Academy of Sciences (India)

    The results of parametric study are compared with those of Smith and Teng. They confirm the accuracy of the proposed approach in predicting both interfacial shear and normal stresses. Keywords. Strengthened beam; interfacial stresses; cohesive zone; shear deformation. 1. Introduction. The FRP plates can be either ...

  6. The Impact of Cooperative Video Games on Team Cohesion

    Science.gov (United States)

    Anderson, Greg

    2010-01-01

    In today's economy, productivity and efficiency require collaboration between employees. In order to improve collaboration the factors affecting teamwork must be examined to identify where changes can be made in order to increase performance. One factor contributing to teamwork is team cohesion and represents a process whereby members are joined…

  7. Cohesive zone modelling and the fracture process of structural tape

    DEFF Research Database (Denmark)

    Stigh, Ulf; Biel, Anders; Svensson, Daniel

    2016-01-01

    and the separation is measured experimentally using methods based on the path independence of the J-integral. Repeated experiments are performed at quasi-static loading. A mixed mode cohesive law is adapted to the experimental data. The law is implemented as a UMAT in Abaqus. Simulations show minor thermal...

  8. Explaining Couple Cohesion in Different Types of Gay Families

    Science.gov (United States)

    van Eeden-Moorefield, Brad; Pasley, Kay; Crosbie-Burnett, Margaret; King, Erin

    2012-01-01

    This Internet-based study used data from a convenience sample of 176 gay men in current partnerships to examine differences in outness, cohesion, and relationship quality between three types of gay male couples: first cohabiting partnerships, repartnerships, and gay stepfamilies. Also, we tested whether relationship quality mediated the link…

  9. Meiotic sister chromatid cohesion and recombination in two filamentous fungi

    NARCIS (Netherlands)

    Heemst, van D.

    2000-01-01

    Homologous recombination and sister chromatid cohesion play important roles in the maintenance of genome integrity and the fidelity of chromosome segregation in mitosis and meiosis. Within the living cell, the integrity of the DNA is threatened by various factors that cause DNA-lesions, of

  10. Towards an integrated approach to cohesion and coherence in ...

    African Journals Online (AJOL)

    The notions of cohesion and coherence have a long tradition in the linguistic literature. They date back to ancient .... syntax, and operates in short-term or working memory. Coherence is related to the ..... account of all the elements that occur in the film, namely, words, gestures, images, music and sound effects. In other ...

  11. Visibility and anonymity effects on attraction and group cohesiveness

    NARCIS (Netherlands)

    Lea, Martin; Spears, Russell; Watt, Susan E.

    2007-01-01

    This study investigated attraction and group cohesiveness under different visibility and anonymity conditions for social categories that differed in their capacity to be visually cued. Using computer-mediated communication in 36 mixed gender (visually cued category) and nationality (non-visually

  12. Facilitating or hindering social cohesion? The impact of the ...

    African Journals Online (AJOL)

    However, we show in this article that that the impact of the CWP is not always positive and that the CWP may in some cases result in tensions and contradictions that hinder social cohesion and even cause violence. If not implemented in a consultative participatory manner, the CWP may be a source of conflict rather than of ...

  13. Grain-resolving simulations of settling cohesive sediment

    Science.gov (United States)

    Vowinckel, Bernhard; Whithers, Jade; Meiburg, Eckart; Luzzatto-Fegiz, Paolo

    2017-11-01

    Cohesive sediment is ubiquitous in natural environments such as rivers, lakes and coastal ecosystems. For this type of sediment, we can no longer ignore the short-range attractive forces that result in flocculation of aggregates much larger than the individual grain size. Hence, understanding the complex dynamics of the interplay between flocculated sediment and the ambient fluid is of prime interest for managing aquatic environments, although a comprehensive understanding of these phenomena is still lacking. In the present study, we address this issue by carrying out grain-resolved simulations of cohesive particles settling under gravity using the Immersed Boundary Method. We present a computational model formulation to accurately resolve the process of flocculation. The cohesive model is then applied to a complex test case. A randomly distributed ensemble of 1261 polydisperse particles is released in a tank of quiescent fluid. Subsequently, particles start to settle, thereby replacing fluid at the bottom of the tank, which induces a counter flow opposing the settling direction. This mechanism will be compared to experimental studies from the literature, as well as to the non-cohesive counterpart to assessthe impact of flocculation on sedimentation.

  14. Working with Group-Tasks and Group Cohesiveness

    Science.gov (United States)

    Anwar, Khoirul

    2016-01-01

    This study aimed at exploring the connection between the use of group task and group cohesiveness. This study is very important because the nature of the learner's success is largely determined by the values of cooperation, interaction, and understanding of the learning objectives together. Subjects of this study are 28 students on the course…

  15. Cohesive Errors in Writing among ESL Pre-Service Teachers

    Science.gov (United States)

    Kwan, Lisa S. L.; Yunus, Melor Md

    2014-01-01

    Writing is a complex skill and one of the most difficult to master. A teacher's weak writing skills may negatively influence their students. Therefore, reinforcing teacher education by first determining pre-service teachers' writing weaknesses is imperative. This mixed-methods error analysis study aims to examine the cohesive errors in the writing…

  16. Family Cohesion, Adaptability and Composition in Adolescents from Callao, Peru

    Science.gov (United States)

    Villarreal-Zegarra, David; Paz-Jesús, Angel

    2017-01-01

    The objective of the study was to analyze if there are significant differences between family cohesion and adaptability according to the type of family composition (nuclear, extended, single parent and non-nuclear). This is a non-experimental and empirical research, in which a non-probabilistic, cross-sectional, selective and associative strategy…

  17. Writing Cohesion Using Content Lexical Ties in ESOL.

    Science.gov (United States)

    Liu, Dilin

    2000-01-01

    Describes a series of exercises that have proved useful in helping students learning English to enhance their writing skills, particularly cohesion in their writing. Exercises enabled students to learn words in context or in relation to one another as synonyms, antonyms, superordinates, or hyponyms, and a better understanding of these words…

  18. Social cohesion, sexuality, homophobia and women's sport in South ...

    African Journals Online (AJOL)

    ... secondly, that the success of national teams and athletes promotes national pride and unity. ... We explore these issues by drawing on media reports of cases in which ... To realise the potential of sport as a tool for building social cohesion, ...

  19. Botswana team sport players' perception of cohesion and imagery ...

    African Journals Online (AJOL)

    Perception of cohesion and imagery use among 45 elite team sport players in Botswana were assessed with the Group Environment Questionnaire (Carron et al., 1985) and the Sport Imagery Questionnaire (Hall et al., 1998) to determine whether a relationship exists between the variables, and whether imagery use will ...

  20. Leadership, Cohesion, and Team Norms Regarding Cheating and Aggression.

    Science.gov (United States)

    Shields, David Lyle Light; And Others

    1995-01-01

    Study explored leadership, cohesion, and demographic variables in relation to team norms about cheating and aggression. Surveys of high school and college ball players indicated that older age, higher year in school, and more years playing ball correlated positively with expectations of peer cheating and aggression. (SM)

  1. The Relationship between Task Cohesion and Competitive State Anxiety.

    Science.gov (United States)

    Eys, Mark A.; Hardy, James; Carron, Albert V.; Beauchamp, Mark R.

    2003-01-01

    Examined the association between athlete perceptions of task cohesiveness (Individual Attractions to the Group-Task and Group Integration-Task) and the degree to which they viewed their perceptions of the presence of pre-competition anxiety symptoms as facilitative or debilitative. Survey data indicated that the more positive their perceptions of…

  2. A cohesive finite element formulation for modelling fracture and ...

    Indian Academy of Sciences (India)

    cohesive elements experience material softening and lose their stress carrying capacity. A few simple ..... In the present work, a Lagrangian finite element procedure is employed. In this formu clation ...... o, is related to 'c o by,. 't o='c o ¼ 1 ہ. 1.

  3. Sense of Cohesion among Community Activists Engaging in Volunteer Activity

    Science.gov (United States)

    Levy, Drorit; Itzhaky, Haya; Zanbar, Lea; Schwartz, Chaya

    2012-01-01

    The present article attempts to shed light on the direct and indirect contribution of personal resources and community indices to Sense of Cohesion among activists engaging in community volunteer work. The sample comprised 481 activists. Based on social systems theory, three levels of variables were examined: (1) inputs, which included personal…

  4. Family Cohesion and Level of Communication Between Parents and ...

    African Journals Online (AJOL)

    This study investigated the level of communication between parents and their adolescent children and how such communication affects family cohesion. A sample of 200 subjects made up of adolescents and parents were selected through cluster, stratified and random sampling techniques from ten Local Government Areas ...

  5. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  6. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  7. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  8. Three dimensional strained semiconductors

    Science.gov (United States)

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  9. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  10. Optically coupled semiconductor device

    Energy Technology Data Exchange (ETDEWEB)

    Kumagaya, Naoki

    1988-11-18

    This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

  11. Developing bulk exchange spring magnets

    Science.gov (United States)

    Mccall, Scott K.; Kuntz, Joshua D.

    2017-06-27

    A method of making a bulk exchange spring magnet by providing a magnetically soft material, providing a hard magnetic material, and producing a composite of said magnetically soft material and said hard magnetic material to make the bulk exchange spring magnet. The step of producing a composite of magnetically soft material and hard magnetic material is accomplished by electrophoretic deposition of the magnetically soft material and the hard magnetic material to make the bulk exchange spring magnet.

  12. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  14. Muonium states in semiconductors

    International Nuclear Information System (INIS)

    Patterson, B.D.

    1987-01-01

    There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

  15. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  16. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  18. Semiconductor Ion Implanters

    International Nuclear Information System (INIS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-01-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  19. The Physics of Semiconductors

    Science.gov (United States)

    Brennan, Kevin F.

    1999-02-01

    Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

  20. Cohesion, Flexibility, and the Mediating Effects of Shared Visionand Compassionon Engagement Army Acquisition Teams

    Science.gov (United States)

    2015-04-01

    issues such as social desirability, negative affect, and acquiescence (Spector, 2006) in the analysis of final model. To test for multicollinearity ...emotional cohesion, cognitive cohesion, and flexibility) are independent with no multicollinearity issues. Development and test of structural

  1. An examination of the relationship between athlete leadership and cohesion using social network analysis.

    Science.gov (United States)

    Loughead, Todd M; Fransen, Katrien; Van Puyenbroeck, Stef; Hoffmann, Matt D; De Cuyper, Bert; Vanbeselaere, Norbert; Boen, Filip

    2016-11-01

    Two studies investigated the structure of different athlete leadership networks and its relationship to cohesion using social network analysis. In Study 1, we examined the relationship between a general leadership quality network and task and social cohesion as measured by the Group Environment Questionnaire (GEQ). In Study 2, we investigated the leadership networks for four different athlete leadership roles (task, motivational, social and external) and their association with task and social cohesion networks. In Study 1, the results demonstrated that the general leadership quality network was positively related to task and social cohesion. The results from Study 2 indicated positive correlations between the four leadership networks and task and social cohesion networks. Further, the motivational leadership network emerged as the strongest predictor of the task cohesion network, while the social leadership network was the strongest predictor of the social cohesion network. The results complement a growing body of research indicating that athlete leadership has a positive association with cohesion.

  2. Cohesive zone modeling of intergranular cracking in polycrystalline aggregates

    International Nuclear Information System (INIS)

    Simonovski, Igor; Cizelj, Leon

    2015-01-01

    Highlights: • Alternative approach to cohesive elements is proposed: cohesive-zone contact. • Applicability to measured and simulated grain structures is demonstrated. • Normal and normal/shear separation as a damage initialization is explored. • Normal/shear damage initialization significantly reduces ductility. • Little difference in Voronoi aggregate size on macroscopic response. - Abstract: Understanding and controlling early damage initiation and evolution are amongst the most important challenges in nuclear power plants, occurring in ferritic, austenitic steels and nickel based alloys. In this work a meso-scale approach to modeling initiation and evolution of early intergranular cracking is presented. This damage mechanism is present in a number of nuclear power plant components and depends on the material (e.g. composition, heat treatment, microstructure), environment and load. Finite element modeling is used to explicitly model the microstructure – both the grains and the grain boundaries. Spatial Voronoi tessellation is used to obtain the grain topology. In addition, measured topology of a 0.4 mm stainless steel wire is used. Anisotropic elasticity and crystal plasticity are used as constitutive laws for the grains. Grain boundaries are modeled using the cohesive zone approach. Different modeling assumptions/parameters are evaluated against the numerical stability criteria. The biggest positive contribution to numerical stability is the use of cohesive-type contact instead of cohesive elements. A small amount of viscous regularization should be also used along with the addition of a small amount of viscous forces to the global equilibrium equations. Two cases of grain boundary damage initiation are explored: (1) initiation due to normal separation and (2) initiation due to a combination of normal and shear separation. The second criterion significantly decreases the ductility of an aggregate and slightly improves the numerical stability

  3. The Effects Of Physical And Biological Cohesion On Bedforms

    Science.gov (United States)

    Parsons, D. R.; Schindler, R.; Baas, J.; Hope, J. A.; Malarkey, J.; Paterson, D. M.; Peakall, J.; Manning, A. J.; Ye, L.; Aspden, R.; Alan, D.; Bass, S. J.

    2014-12-01

    Most coastal sediments consist of complex mixtures of cohesionless sands, physically-cohesive clays and extra cellular polymeric substances (EPS) that impart biological cohesion. Yet, our ability to predict bedform dimensions in these substrates is reliant on predictions based exclusively on cohesionless sand. We present findings from the COHBED project - which explicitly examines how bedform dynamics are modified by natural cohesion. Our experimental results show that for ripples, height and length are inversely proportional to initial clay content and bedforms take longer to appear, with no ripples when clay content exceeds 18%. When clay is replaced by EPS the development time and time of first appearance of ripples both increase by two orders of magnitude, with no bedforms above 0.125% EPS. For dunes, height and length are also inversely proportional to initial substrate clay content, resulting in a transition from dunes to ripples normally associated with velocity decreases. Addition of low EPS concentrations into the substrate results in yet smaller bedforms at the same clay contents and at high EPS concentrations, biological cohesion supersedes all electrostatic bonding, and bedform size is no longer related to mud content. The contrast in physical and biological cohesion effects on bedform development result from the disparity between inter-particle electrostatic bonding of clay particles and EPS grain coating and strands that physically link sediments together, which effects winnowing rates as bedforms evolve. These findings have wide ranging implications for bedform predictions in both modern and ancient environments. Coupling of biological and morphological processes not only requires an understanding of how bedform dimensions influence biota and habitat, but also how benthic species can modify bedform dimensions. Consideration of both aspects provides a means in which fluid dynamics, sediment transport and ecosystem energetics can be linked to yield

  4. Resuspension and settling of helminth eggs in water: Interactions with cohesive sediments.

    Science.gov (United States)

    Sengupta, Mita E; Andersen, Thorbjørn J; Dalsgaard, Anders; Olsen, Annette; Thamsborg, Stig M

    2012-08-01

    Helminth parasite eggs in low quality water represent main food safety and health hazards and are therefore important indicators used to determine whether such water can be used for irrigation. Through sedimentation helminth eggs accumulate in the sediment, however resuspension of deposited helminth eggs will lead to increased concentration of suspended eggs in the water. Our study aimed to determine the erodibility (erosion rate and erosion threshold) and settling velocity of Ascaris and Trichuris eggs as well as cohesive sediment at different time points after incorporation into the sediment. Cohesive sediment collected from a freshwater stream was used to prepare a sediment bed onto which helminth eggs were allowed to settle. The erodibility of both sediment and helminth eggs was found to decrease over time indicating that the eggs were incorporated into the surface material of the bed and that this material was stabilized through time. This interaction between eggs and bulk sediment was further manifested in an increased settling velocity of suspended eggs when sediment was present in the suspension as compared to a situation with settling in clean water. The incorporation into the sediment bed and the aggregation with sediment particles decrease the mobility of both helminth egg types. Our findings document that helminth eggs should not be viewed as single entities in water systems when modelling the distribution of eggs since both erodibility and settling velocity of eggs are determined by mobility of the sediment present in the water stream. Recalculation of the erosion threshold for helminth eggs and sediment showed that even at relatively low current velocities i.e. 0.07-0.12ms(-1) newly deposited eggs will be mobile in open irrigation channels. These environmental factors affecting resuspension must be taken into account when developing models for sedimentation of helminth eggs in different water systems. Copyright © 2012 Elsevier Ltd. All rights

  5. Trions in bulk and monolayer materials: Faddeev equations and hyperspherical harmonics.

    Science.gov (United States)

    Filikhin, I; Kezerashvili, R Ya; Tsiklauri, Sh M; Vlahovic, B

    2018-03-23

    The negatively T - and positively T + charged trions in bulk and monolayer semiconductors are studied in the effective mass approximation within the framework of a potential model. The binding energies of trions in various semiconductors are calculated by employing the Faddeev equation with the Coulomb potential in 3D configuration space. Results of calculations of the binding energies for T - are consistent with previous computational studies, while the T + is unbound for all considered cases. The binding energies of trions in monolayer semiconductors are calculated using the method of hyperspherical harmonics by employing the Keldysh potential. It is shown that 2D T - and T + trions are bound and the binding energy of the positive trion is always greater than for the negative trion due to the heavier effective mass of holes. Our calculations demonstrate that screening effects play an important role in the formation of bound states of trions in 2D semiconductors.

  6. Estimating cohesion in small groups using audio-visual nonverbal behavior

    NARCIS (Netherlands)

    Hung, H.; Gatica-Perez, D.

    2010-01-01

    Cohesiveness in teams is an essential part of ensuring the smooth running of task-oriented groups. Research in social psychology and management has shown that good cohesion in groups can be correlated with team effectiveness or productivity, so automatically estimating group cohesion for team

  7. On binding energy of trions in bulk materials

    Science.gov (United States)

    Filikhin, Igor; Kezerashvili, Roman Ya.; Vlahovic, Branislav

    2018-03-01

    We study the negatively T- and positively T+ charged trions in bulk materials in the effective mass approximation within the framework of a potential model. The binding energies of trions in various semiconductors are calculated by employing Faddeev equation in configuration space. Results of calculations of the binding energies for T- are consistent with previous computational studies and are in reasonable agreement with experimental measurements, while the T+ is unbound for all considered cases. The mechanism of formation of the binding energy of trions is analyzed by comparing contributions of a mass-polarization term related to kinetic energy operators and a term related to the Coulomb repulsion of identical particles.

  8. Electron states in semiconductor quantum dots

    International Nuclear Information System (INIS)

    Dhayal, Suman S.; Ramaniah, Lavanya M.; Ruda, Harry E.; Nair, Selvakumar V.

    2014-01-01

    In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications

  9. Electrodes for Semiconductor Gas Sensors

    Science.gov (United States)

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  10. Psychobiological Assessment and Enhancement of Team Cohesion and Psychological Resilience in ROTC Cadets Using a Virtual-Reality Team Cohesion Test

    Science.gov (United States)

    2016-06-01

    Using a Virtual - Reality Team Cohesion Test PRINCIPAL INVESTIGATOR: Josh Woolley MD/PhD CONTRACTING ORGANIZATION: NORTHERN CALIFORNIA INSTITUTE SAN...Team Cohesion and Psychological Resilience in ROTC Cadets Using a Virtual - Reality Team Cohesion Test 5b. GRANT NUMBER W81XWH-15-1-0042 5c. PROGRAM...targets while flying a virtual air vehicle. No individual has access to all the necessary information or controls, so operating as a team is crucial

  11. Development of semiconductor electronics

    International Nuclear Information System (INIS)

    Bardeen, John.

    1977-01-01

    In 1931, Wilson applied Block's theory about the energy bands for the motion of electrons in a crystal lattice to semiconductors and showed that conduction can take place in two different ways, by electrons and by holes. Not long afterwards Frenkel showed that these carriers can flow by diffusion in a concentration gradient as well as under the influence of an electric field and wrote down equations for the current flow. The third major contribution, in the late 1930's was the explanation of rectification at a metalsemiconductor contact by Mott and more completely by Schottky. In late 1947 the first transistor of the point contact type was invented by Brattin, Shockley and Bardeen. Then after single crystals of Ge were grown, the junction transistor was developed by the same group. The first silicon transistors appeared in 1954. Then an important step was discovery of the planar transistor by Hoenri in 1960 which led to development of integrated circuits by 1962. Many transistors are produced by batch processing on a slice of silicon. Then in 1965 Mos (Metal-Oxide Semiconductor) transistor and in 1968 LSI (Large Scale Intergration circuits) were developed. Aside from electronic circuits, there are many other applications of semiconductors, including junction power rectifiers, junction luminescence (including lasers), solar batteries, radiation detectors, microwave oscillators and charged-coupled devices for computer memories and devices. One of the latest developments is a microprocessor with thousands of transistors and associated circuitry on a single small chip of silicon. It can be programmed to provide a variety of circuit functions, thus it is not necessary to go through the great expense of LSI's for each desired function, but to use standard microprocessors and program to do the job

  12. Recent advances in photoelectrochemistry. Part 1. Preparation and photocatalytic activities of semiconductor microcrystals; Saikin no hikari denki kagaku. 1. Handotai chobiryushi no chosei to hikari shokubai kassei

    Energy Technology Data Exchange (ETDEWEB)

    Yoneyama, H; Torimoto, T [Osaka Univ., Osaka (Japan). Faculty of Engineering

    1995-01-05

    The energy structure of semiconductor microcrystals with less than 10nm particle size is different from that of bulk semiconductor, and the reducing force of electrons and the oxidizing force of holes produced by light in microcrystals are larger than those of bulk semiconductor. Focusing on the application of semiconductor microcrystals to photocatalysis, the effects of the particle size and surface conditions of particles on photocatalytic activity are discussed. It has been shown that the change in the characteristics of semiconductor microcrystals depends on particle size, and microcrystals with narrow distribution of particle sized is necessary for the study of the characteristics of semiconductor microcrystals. An example of high efficient progress of CO2 direct reduction by the use of semiconductor microcrystals is introduced. It has been made clear that the photocatalytic activity of semiconductor is improved when a small amount of electrode catalyst is supported in it. A unique photocatalytic reaction which can not be observed with bulk particles can be progressed by the use of high oxidation and reduction ability caused by quantum size effect of semiconductor microcrystals. 26 refs., 2 figs., 1 tab.

  13. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  14. Electrowetting on semiconductors

    Science.gov (United States)

    Palma, Cesar; Deegan, Robert

    2015-01-01

    Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

  15. Semiconductor ionizino. radiation detectors

    International Nuclear Information System (INIS)

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  16. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  17. Derivation of Path Independent Coupled Mix Mode Cohesive Laws from Fracture Resistance Curves

    DEFF Research Database (Denmark)

    Goutianos, Stergios

    2016-01-01

    A generalised approach is presented to derive coupled mixed mode cohesive laws described with physical parameters such as peak traction, critical opening, fracture energy and cohesive shape. The approach is based on deriving mix mode fracture resistance curves from an effective mix mode cohesive...... law at different mode mixities. From the fracture resistance curves, the normal and shear stresses of the cohesive laws can be obtained by differentiation. Since, the mixed mode cohesive laws are obtained from a fracture resistance curve (potential function), path independence is automatically...

  18. A consistent partly cracked XFEM element for cohesive crack growth

    DEFF Research Database (Denmark)

    Asferg, Jesper L.; Poulsen, Peter Noe; Nielsen, Leif Otto

    2007-01-01

    Present extended finite element method (XFEM) elements for cohesive crack growth may often not be able to model equal stresses on both sides of the discontinuity when acting as a crack-tip element. The authors have developed a new partly cracked XFEM element for cohesive crack growth with extra...... enrichments to the cracked elements. The extra enrichments are element side local and were developed by superposition of the standard nodal shape functions for the element and standard nodal shape functions for a sub-triangle of the cracked element. With the extra enrichments, the crack-tip element becomes...... capable of modelling variations in the discontinuous displacement field on both sides of the crack and hence also capable of modelling the case where equal stresses are present on each side of the crack. The enrichment was implemented for the 3-node constant strain triangle (CST) and a standard algorithm...

  19. Numerical simulation of particle settling and cohesion in liquid

    Energy Technology Data Exchange (ETDEWEB)

    Johno, Y; Nakashima, K; Shigematsu, T; Ono, B [SASEBO National College of Technology, 1-1 Okishin, Sasebo, Nagasaki, 857-1193 (Japan); Satomi, M, E-mail: yjohno@post.cc.sasebo.ac.j [Sony Semiconductor Kyushu Corporation, Kikuchigun, Kumamoto (Japan)

    2009-02-01

    In this study, the motions of particles and particle clusters in liquid were numerically simulated. The particles of two sizes (Dp=40mum and 20mum) settle while repeating cohesion and dispersion, and finally the sediment of particles are formed at the bottom of a hexahedron container which is filled up with pure water. The flow field was solved with the Navier-Stokes equations and the particle motions were solved with the Lagrangian-type motion equations, where the interaction between fluid and particles due to drag forces were taken into account. The collision among particles was calculated using Distinct Element Method (DEM), and the effects of cohesive forces by van der Waals force acting on particle contact points were taken into account. Numerical simulations were performed under conditions in still flow and in shear flow. It was found that the simulation results enable us to know the state of the particle settling and the particle condensation.

  20. A cohesive zone framework for environmentally assisted fatigue

    DEFF Research Database (Denmark)

    del Busto, Susana; Betegón, Covadonga; Martínez Pañeda, Emilio

    2017-01-01

    We present a compelling finite element framework to model hydrogen assisted fatigue by means of a hydrogen- and cycle-dependent cohesive zone formulation. The model builds upon: (i) appropriate environmental boundary conditions, (ii) a coupled mechanical and hydrogen diffusion response, driven...... by chemical potential gradients, (iii) a mechanical behavior characterized by finite deformation J2 plasticity, (iv) a phenomenological trapping model, (v) an irreversible cohesive zone formulation for fatigue, grounded on continuum damage mechanics, and (vi) a traction-separation law dependent on hydrogen...... coverage calculated from first principles. The computations show that the present scheme appropriately captures the main experimental trends; namely, the sensitivity of fatigue crack growth rates to the loading frequency and the environment. The role of yield strength, work hardening, and constraint...

  1. Grain boundary embrittlement and cohesion enhancement in copper

    Energy Technology Data Exchange (ETDEWEB)

    Paxton, Anthony; Lozovoi, Alexander [Atomistic Simulation Centre, Queen' s University Belfast, BT7 1NN (United Kingdom); Schweinfest, Rainer [Science+Computing ag, Hagellocher Weg 71-5, 720270 T ubingen (Germany); Finnis, Michael [Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom)

    2008-07-01

    There has been a long standing debate surrounding the mechanism of grain boundary embrittlement and cohesion enhancement in metals. Embrittlement can lead to catastrophic failure such as happened in the Hinkley Point disaster, or indeed in the case of the Titanic. This kind of embrittlement is caused by segregation of low solubility impurities to grain boundaries. While the accepted wisdom is that this is a phenomenon driven by electronic or chemical factors, using language such as charge transfer and electronegativity difference; we believe that in copper, at least, both cohesion enhancement and reduction are caused by a simple size effect. We have developed a theory that allows us to separate unambiguously, if not uniquely, chemical and structural factors. We have studied a large number of solutes in copper using first principles atomistic simulation to support this argument, and the results of these calculations are presented here.

  2. Cohesive fracture model for functionally graded fiber reinforced concrete

    International Nuclear Information System (INIS)

    Park, Kyoungsoo; Paulino, Glaucio H.; Roesler, Jeffery

    2010-01-01

    A simple, effective, and practical constitutive model for cohesive fracture of fiber reinforced concrete is proposed by differentiating the aggregate bridging zone and the fiber bridging zone. The aggregate bridging zone is related to the total fracture energy of plain concrete, while the fiber bridging zone is associated with the difference between the total fracture energy of fiber reinforced concrete and the total fracture energy of plain concrete. The cohesive fracture model is defined by experimental fracture parameters, which are obtained through three-point bending and split tensile tests. As expected, the model describes fracture behavior of plain concrete beams. In addition, it predicts the fracture behavior of either fiber reinforced concrete beams or a combination of plain and fiber reinforced concrete functionally layered in a single beam specimen. The validated model is also applied to investigate continuously, functionally graded fiber reinforced concrete composites.

  3. The limits of social capital: Durkheim, suicide, and social cohesion.

    Science.gov (United States)

    Kushner, Howard I; Sterk, Claire E

    2005-07-01

    Recent applications of social capital theories to population health often draw on classic sociological theories for validation of the protective features of social cohesion and social integration. Durkheim's work on suicide has been cited as evidence that modern life disrupts social cohesion and results in a greater risk of morbidity and mortality-including self-destructive behaviors and suicide. We argue that a close reading of Durkheim's evidence supports the opposite conclusion and that the incidence of self-destructive behaviors such as suicide is often greatest among those with high levels of social integration. A reexamination of Durkheim's data on female suicide and suicide in the military suggests that we should be skeptical about recent studies connecting improved population health to social capital.

  4. Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Varo, Pilar [Departamento de Electrónica y Tecnología de Computadores, CITIC-UGR, Universidad de Granada, 18071 Granada (Spain); Bertoluzzi, Luca [Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló (Spain); Bisquert, Juan, E-mail: bisquert@uji.es [Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló (Spain); Department of Chemistry, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Alexe, Marin [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Coll, Mariona [Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Catalonia (Spain); Huang, Jinsong [Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0656 (United States); Jimenez-Tejada, Juan Antonio [Departamento de Electrónica y Tecnología de Computadores, CITIC-UGR, Universidad de Granada, 18071 Granada (Spain); Kirchartz, Thomas [IEK5-Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Faculty of Engineering and CENIDE, University of Duisburg–Essen, Carl-Benz-Str. 199, 47057 Duisburg (Germany); Nechache, Riad; Rosei, Federico [INRS—Center Énergie, Matériaux et Télécommunications, Boulevard Lionel-Boulet, Varennes, Québec, J3X 1S2 (Canada); Yuan, Yongbo [Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0656 (United States)

    2016-10-07

    Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron–hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

  5. Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

    International Nuclear Information System (INIS)

    Lopez-Varo, Pilar; Bertoluzzi, Luca; Bisquert, Juan; Alexe, Marin; Coll, Mariona; Huang, Jinsong; Jimenez-Tejada, Juan Antonio; Kirchartz, Thomas; Nechache, Riad; Rosei, Federico; Yuan, Yongbo

    2016-01-01

    Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron–hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

  6. Erosion of cohesive soil layers above underground conduits

    Directory of Open Access Journals (Sweden)

    Luu Li-Hua

    2017-01-01

    Full Text Available Using a recently developed 2D numerical modelling that combines Discrete Element (DEM and Lattice Boltzmann methods (LBM, we simulate the destabilisation by an hydraulic gradient of a cohesive granular soil clogging the top of an underground conduit. We aim to perform a multi-scale study that relates the grain scale behavior to the macroscopic erosion process. In particular, we study the influence of the flow conditions and the inter-particle contact forces intensity on the erosion kinetic.

  7. Erosion of cohesive soil layers above underground conduits

    Science.gov (United States)

    Luu, Li-Hua; Philippe, Pierre; Noury, Gildas; Perrin, Jérôme; Brivois, Olivier

    2017-06-01

    Using a recently developed 2D numerical modelling that combines Discrete Element (DEM) and Lattice Boltzmann methods (LBM), we simulate the destabilisation by an hydraulic gradient of a cohesive granular soil clogging the top of an underground conduit. We aim to perform a multi-scale study that relates the grain scale behavior to the macroscopic erosion process. In particular, we study the influence of the flow conditions and the inter-particle contact forces intensity on the erosion kinetic.

  8. Social cohesion and civil law: marriage, divorce and religious courts

    OpenAIRE

    Douglas, Gillian; Doe, Christopher Norman; Gilliat-Ray, Sophie; Sandberg, Russell; Khan, Asma

    2011-01-01

    This Cardiff University study of religious courts and tribunals across the UK has been funded by the AHRC/ESRC Religion and Society Programme. The project, „Social Cohesion and Civil Law: Marriage, Divorce and Religious Courts‟, explores how religious law functions alongside civil law in England and Wales.\\ud The context, though not the catalyst, for our study, is the lecture given by the Archbishop of Canterbury in 2008 on the relationship between religious law - primarily though not exclusi...

  9. Family Change and Implications for Family Solidarity and Social Cohesion

    Directory of Open Access Journals (Sweden)

    Ravanera, Zenaida

    2008-01-01

    Full Text Available EnglishSocial cohesion can be viewed in terms of common projects and networks of social relations that characterize families, communities and society. In the past decades, the basis for family cohesion has shifted from organic to mechanical or from breadwinner to collaborative model. As in many Western countries, data on family change in Canada point to a greater flexibility in the entry and exit from relationships, a delay in the timing of family events, and a diversity of family forms. After looking at changes in families and in the family setting of individuals, the paper considers both intra-family cohesion and families as basis for social cohesion. Implications are raised for adults, children and publicp olicy.FrenchLa cohésion sociale peut se voir à travers les projets communs et les réseaux desrelations sociales qui caractérisent les familles, les communautés et les sociétés.La base de cohésion familiale est passée d’organique à mécanique, pour utiliserles termes de Durkheim, ou vers un modèle de collaboration plutôt qu’unepartage asymétrique de tâches. Comme dans d’autres sociétés orientales, lafamille au Canada est devenue plus flexible par rapport aux entrées et sortiesd’unions, il y a un délais dans les événements familiaux, et une variété deformes de familles. Après un regard sur les changements dans les familles etdans la situation familiale des individus, nous considérons la cohésion intrafamilialeet la famille comme base de cohésion sociale. Nous discutons desimpacts sur les adultes, les enfants et la politique publique.

  10. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  11. The Process Architecture of EU Territorial Cohesion Policy

    Directory of Open Access Journals (Sweden)

    Andreas Faludi

    2010-08-01

    Full Text Available When preparing the European Spatial Development Perspective (ESDP, Member States were supported by the European Commission but denied the EU a competence in the matter. Currently, the Treaty of Lisbon identifies territorial cohesion as a competence shared between the Union and the Member States. This paper is about the process architecture of territorial cohesion policy. In the past, this architecture resembled the Open Method of Coordination (OMC which the White Paper on European Governance praised, but only in areas where there was no EU competence. This reflected zero-sum thinking which may continue even under the Lisbon Treaty. After all, for as long as territorial cohesion was not a competence, voluntary cooperation as practiced in the ESDP process was pursued in this way. However, the practice of EU policies, even in areas where there is an EU competence, often exhibits features of the OMC. Surprisingly effective innovations hold the promise of rendering institutions of decision making comprehensible and democratically accountable. In the EU as a functioning polity decision making is thus at least part deliberative so that actors’ preferences are transformed by the force of the better argument. This brings into focus the socialisation of the deliberators into epistemic communities. Largely an informal process, this is reminiscent of European spatial planning having been characterised as a learning process.

  12. The Role of Lexical Cohesion in Writing Quality

    Directory of Open Access Journals (Sweden)

    Hmoud Alotaibi

    2015-01-01

    Full Text Available The idea of whether repetition has any relation with the writing quality of the text has remained an issue that intrigues a number of scholars in linguistics and in writing studies. Michael Hoey (1991, Halliday and Hasan (1976 are two prominent works in presenting detailed and thoughtful analysis of repetition occurrences in the text. This study uses a model of lexical cohesion proposed by Witte and Faigley (1981 which itself is based on the taxonomies of cohesive ties presented by Halliday and Hasan (1976.  The model deals with lexical cohesion and its subclasses, namely, repetition (same type, synonym, near-synonym, super-ordinate item, and general item and collocation. The corpus includes five argumentative essays written by students in the field of English language literature. Five teaching assistants were asked to rank the papers on a five-point scale based on their perception of the papers’ writing quality. The results showed that the paper that received the lowest rating in terms of the writing quality was the one that included the largest number of repetition occurrences of the same type. The study concludes by arguing that repetition may not be considered as monolithic, and suggests that every type of repetition needs to be examined individually in order to determine what enhances and what deteriorates the writing quality.

  13. An examination of the cohesion-performance relationship in university hockey teams.

    Science.gov (United States)

    Slater, M R; Sewell, D F

    1994-10-01

    The objective of this study was to assess, using the Group Environment Questionnaire, whether team cohesion in university-level field hockey was a cause for, or an effect of, successful performance. A quasi-experimental longitudinal design with cross-lagged correlational analysis was adopted and measures of cohesion and performance were taken midway and later in the season. The results of the synchronous correlations showed a positive relationship (with good stationarity) between team cohesion and performance outcome. Although non-significant cross-lagged differentials indicated a circular relationship, the magnitudes of both the cross-lagged correlations and the partial correlations, together with multiple-regression analyses, revealed that the stronger flow was from cohesion to performance. The socially oriented aspects of cohesion, in particular, had significant associations with performance. The results imply that cohesion-performance relationships should be examined within a circular model, in which cohesion and performance are interdependent.

  14. Electro-optical modeling of bulk heterojunction solar cells

    Science.gov (United States)

    Kirchartz, Thomas; Pieters, Bart E.; Taretto, Kurt; Rau, Uwe

    2008-11-01

    We introduce a model for charge separation in bulk heterojunction solar cells that combines exciton transport to the interface between donor and acceptor phases with the dissociation of the bound electron/hole pair. We implement this model into a standard semiconductor device simulator, thereby creating a convenient method to simulate the optical and electrical characteristics of a bulk heterojunction solar cell with a commercially available program. By taking into account different collection probabilities for the excitons in the polymer and the fullerene, we are able to reproduce absorptance, internal and external quantum efficiency, as well as current/voltage curves of bulk heterojunction solar cells. We further investigate the influence of mobilities of the free excitons as well as the mobilities of the free charge carriers on the performance of bulk heterojunction solar cells. We find that, in general, the highest efficiencies are achieved with the highest mobilities. However, an optimum finite mobility of free charge carriers can result from a large recombination velocity at the contacts. In contrast, Langevin-type of recombination cannot lead to finite optimum mobilities even though this mechanism has a strong dependence on the free carrier mobilities.

  15. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  16. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  17. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  18. Semiconductor photocatalysis principles and applications

    CERN Document Server

    Kisch, Horst

    2014-01-01

    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  19. Progress in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Walton, J.; Gatti, E.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

  20. Semiconductor materials and their properties

    NARCIS (Netherlands)

    Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

    2017-01-01

    Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

  1. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  2. Terahertz Nonlinear Optics in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

  3. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  4. Atomic scale study of intrinsic and Mn doped quantum dots in III-V semiconductors

    NARCIS (Netherlands)

    Bozkurt, M.

    2011-01-01

    In this thesis, a Cross Sectional Scanning Tunneling Microscope (X-STM) is used to investigate nanostructures in IIIV semiconductors and single Mn impurities in bulk GaAs. The atomic resolution which can be achieved with X-STM makes it possible to link structural properties of nanostructures to

  5. Radiation effects in bulk and nanostructured silicon

    Energy Technology Data Exchange (ETDEWEB)

    Holmstrom, E.

    2012-07-01

    Understanding radiation effects in silicon (Si) is of great technological importance. The material, being the basis of modern semiconductor electronics and photonics, is subjected to radiation already at the processing stage, and in many applications throughout the lifetime of the manufactured component. Despite decades of research, many fundamental questions on the subject are still not satisfactorily answered, and new ones arise constantly as device fabrication shifts towards the nanoscale. In this study, methods of computational physics are harnessed to tackle basic questions on the radiation response of bulk and nanostructured Si systems, as well as to explain atomic-scale phenomena underlying existing experimental results. Empirical potentials and quantum mechanical models are coupled with molecular dynamics simulations to model the response of Si to irradiation and to characterize the created crystal damage. The threshold displacement energy, i.e., the smallest recoil energy required to create a lattice defect, is determined in Si bulk and nanowires, in the latter system also as a function of mechanical strain. It is found that commonly used values for this quantity are drastically underestimated. Strain on the nanowire causes the threshold energy to drop, with an effect on defect production that is significantly higher than in an another nanostructure with similar dimensions, the carbon nanotube. Simulating ion irradiation of Si nanowires reveals that the large surface area to volume ratio of the nanostructure causes up to a three-fold enhancement in defect production as compared to bulk Si. Amorphous defect clusters created by energetic neutron bombardment are predicted, on the basis of their electronic structure and abundance, to cause a deleterious phenomenon called type inversion in Si strip detectors in high-energy physics experiments. The thinning of Si lamellae using a focused ion beam is studied in conjunction with experiment to unravel the cause for

  6. A systematic approach to solvent selection based on cohesive energy densities in a molecular bulk heterojunction system

    Energy Technology Data Exchange (ETDEWEB)

    Walker, Bright; Duong, Duc T.; Dang, Xuan-Dung; Kim, Chunki; Granstrom, Jimmy; Nguyen, Thuc-Quyen [Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry, University of California at Santa Barbara, Santa Barbara, CA, 93106 (United States); Tamayo, Arnold [Department of Chemistry and Geochemistry, Colorado School of Mines, 1500 Illinois Street, Golden, CO, 80401 (United States)

    2011-03-18

    The solubilities of 3,6-bis(5-(benzofuran-2-yl)thiophen-2-yl)-2,5-bis(2-ethylhexyl)pyrrolo[3,4-c]pyrrole-1,4-dione (DPP(TBFu){sub 2}) and [6,6]-phenyl-C{sub 71}-butyric acid methyl ester (PC{sub 71}BM) in a series of solvents are measured, and this data is used to calculate the Hansen solubility parameters of the two materials. The dispersion, polar, and H-bonding parameters of DPP(TBFu){sub 2} and PC{sub 71}BM were found to be (19.3, 4.8, 6.3) and (20.2, 5.4, 4.5) MPa{sup 1/2}, respectively, with an error of {+-} 0.8 MPa{sup 1/2}. Based on the solubility properties of the two materials, three new solvents (thiophene, trichloroethylene and carbon disulfide) were utilized for the DPP(TBFu){sub 2}:PC{sub 71}BM system which, after device optimization, led to power conversion efficiencies up to 4.3%. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  8. Drinking water biofilm cohesiveness changes under chlorination or hydrodynamic stress.

    Science.gov (United States)

    Mathieu, L; Bertrand, I; Abe, Y; Angel, E; Block, J C; Skali-Lami, S; Francius, G

    2014-05-15

    Attempts at removal of drinking water biofilms rely on various preventive and curative strategies such as nutrient reduction in drinking water, disinfection or water flushing, which have demonstrated limited efficiency. The main reason for these failures is the cohesiveness of the biofilm driven by the physico-chemical properties of its exopolymeric matrix (EPS). Effective cleaning procedures should break up the matrix and/or change the elastic properties of bacterial biofilms. The aim of this study was to evaluate the change in the cohesive strength of two-month-old drinking water biofilms under increasing hydrodynamic shear stress τw (from ∼0.2 to ∼10 Pa) and shock chlorination (applied concentration at T0: 10 mg Cl2/L; 60 min contact time). Biofilm erosion (cell loss per unit surface area) and cohesiveness (changes in the detachment shear stress and cluster volumes measured by atomic force microscopy (AFM)) were studied. When rapidly increasing the hydrodynamic constraint, biofilm removal was found to be dependent on a dual process of erosion and coalescence of the biofilm clusters. Indeed, 56% of the biofilm cells were removed with, concomitantly, a decrease in the number of the 50-300 μm(3) clusters and an increase in the number of the smaller (i.e., 600 μm(3)) ones. Moreover, AFM evidenced the strengthening of the biofilm structure along with the doubling of the number of contact points, NC, per cluster volume unit following the hydrodynamic disturbance. This suggests that the compactness of the biofilm exopolymers increases with hydrodynamic stress. Shock chlorination removed cells (-75%) from the biofilm while reducing the volume of biofilm clusters. Oxidation stress resulted in a decrease in the cohesive strength profile of the remaining drinking water biofilms linked to a reduction in the number of contact points within the biofilm network structure in particular for the largest biofilm cluster volumes (>200 μm(3)). Changes in the cohesive

  9. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  10. Amorphous Semiconductors: From Photocatalyst to Computer Memory

    Science.gov (United States)

    Sundararajan, Mayur

    Amorphous semiconductors are useful in many applications like solar cells, thin film displays, sensors, electrophotography, etc. The dissertation contains four projects. In the first three projects, semiconductor glasses which are a subset of amorphous semiconductors were studied. The last project is about exploring the strengths and constraints of two analysis programs which calculate the particle size information from experimental Small Angle X-ray Scattering data. By definition, glasses have a random atomic arrangement with no order beyond the nearest neighbor, but strangely there exists an Intermediate Range Order (IRO). The origin of IRO is still not clearly understood, but various models have been proposed. The signature of IRO is the First Sharp Diffraction Peak(FSDP) observed in x-ray and neutron scattering data. The FSDP of TiO 2 SiO2 glass photocatalyst with different Ti:Si ratio from SAXS data was measured to test the theoretical models. The experimental results along with its computer simulation results strongly supported one of two leading models. It was also found that the effect of doping IRO on TiO2 SiO2 is severe in mesoporous form than the bulk form. Glass semiconductors in mesoporous form are very useful photocatalysts due to their large specific surface area. Solar energy conversion of photocatalysts greatly depends on their bandgap, but very few photocatalysts have the optical bandgap covering the whole visible region of solar spectrum leading to poor efficiency. A physical method was developed to manipulate the bandgap of mesoporous photocatalysts, by using the anisotropic thermal expansion and stressed glass network properties of mesoporous glasses. The anisotropic thermal expansion was established by S/WAXS characterization of mesoporous silica (MCM-41). The residual stress in the glass network of mesoporous glasses was already known for an earlier work. The new method was initially applied on mesoporous TiPO4, and the results were

  11. Band-gap measurements of bulk and nanoscale hematite by soft x-ray spectroscopy

    DEFF Research Database (Denmark)

    Gilbert, B.; Frandsen, Cathrine; Maxey, E.R.

    2009-01-01

    Chemical and photochemical processes at semiconductor surfaces are highly influenced by the size of the band gap, and ability to control the band gap by particle size in nanomaterials is part of their promise. The combination of soft x-ray absorption and emission spectroscopies provides band......-gap determination in bulk and nanoscale itinerant electron semiconductors such as CdS and ZnO, but this approach has not been established for materials such as iron oxides that possess band-edge electronic structure dominated by electron correlations. We performed soft x-ray spectroscopy at the oxygen K...

  12. Semiconductor radiation detector

    Science.gov (United States)

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  13. Semiconductor testing method

    International Nuclear Information System (INIS)

    Brown, Stephen.

    1992-01-01

    In a method of avoiding use of nuclear radiation, eg gamma rays, X-rays, electron beams, for testing semiconductor components for resistance to hard radiation, which hard radiation causes data corruption in some memory devices and 'latch-up' in others, similar fault effects can be achieved using a xenon or other 'light' flash gun even though the penetration of light is significantly less than that of gamma rays. The method involves treating a device with gamma radiation, measuring a particular fault current at the onset of a fault event, repeating the test with light to confirm the occurrence of the fault event at the same measured fault current, and using the fault current value as a reference for future tests using light on similar devices. (author)

  14. Radial semiconductor drift chambers

    International Nuclear Information System (INIS)

    Rawlings, K.J.

    1987-01-01

    The conditions under which the energy resolution of a radial semiconductor drift chamber based detector system becomes dominated by the step noise from the detector dark current have been investigated. To minimise the drift chamber dark current attention should be paid to carrier generation at Si/SiO 2 interfaces. This consideration conflicts with the desire to reduce the signal risetime: a higher drift field for shorter signal pulses requires a larger area of SiO 2 . Calculations for the single shaping and pseudo Gaussian passive filters indicate that for the same degree of signal risetime sensitivity in a system dominated by the step noise from the detector dark current, the pseudo Gaussian filter gives only a 3% improvement in signal/noise and 12% improvement in rate capability compared with the single shaper performance. (orig.)

  15. Energy distribution in semiconductors

    International Nuclear Information System (INIS)

    Ance, C.

    1979-01-01

    For various semiconductors the dispersive energy Esub(d) defined in the Wemple-Didomenico model is connected with the covalent and ionic energies Esub(h) and C. A continuous curve of ionicity against the ratio of the two energies Esub(A) and Esub(B), connected to Esub(h) and C is reported. Afromowitz's model is applied to the ternary compounds Gasub(1-x)Alsub(x)Sb using optical decomposition. From these results the average energy gap Esub(g) is given by Esub(g) = D 0 M 0 sup((IB))/(epsilon 1 (0)-1) where M 0 sup((IB)) is the interband transition contribution to the optical moment M 0 . (author)

  16. Organic Semiconductor Photovoltaics

    Science.gov (United States)

    Sariciftci, Niyazi Serdar

    2005-03-01

    Recent developments on organic photovoltaic elements are reviewed. Semiconducting conjugated polymers and molecules as well as nanocrystalline inorganic semiconductors are used in composite thin films. The photophysics of such photoactive devices is based on the photoinduced charge transfer from donor type semiconducting molecules onto acceptor type molecules such as Buckminsterfullerene, C60 and/or nanoparticles. Similar to the first steps in natural photosynthesis, this photoinduced electron transfer leads to a number of potentially interesting applications which include sensitization of the photoconductivity and photovoltaic phenomena. Examples of photovoltaic architectures are discussed with their potential in terrestrial solar energy conversion. Several materials are introduced and discussed for their photovoltaic activities. Furthermore, nanomorphology has been investigated with AFM, SEM and TEM. The morphology/property relationship for a given photoactive system is found to be a major effect.

  17. Traditional Semiconductors in the Two-Dimensional Limit.

    Science.gov (United States)

    Lucking, Michael C; Xie, Weiyu; Choe, Duk-Hyun; West, Damien; Lu, Toh-Ming; Zhang, S B

    2018-02-23

    Interest in two-dimensional materials has exploded in recent years. Not only are they studied due to their novel electronic properties, such as the emergent Dirac fermion in graphene, but also as a new paradigm in which stacking layers of distinct two-dimensional materials may enable different functionality or devices. Here, through first-principles theory, we reveal a large new class of two-dimensional materials which are derived from traditional III-V, II-VI, and I-VII semiconductors. It is found that in the ultrathin limit the great majority of traditional binary semiconductors studied (a series of 28 semiconductors) are not only kinetically stable in a two-dimensional double layer honeycomb structure, but more energetically stable than the truncated wurtzite or zinc-blende structures associated with three dimensional bulk. These findings both greatly increase the landscape of two-dimensional materials and also demonstrate that in the double layer honeycomb form, even ordinary semiconductors, such as GaAs, can exhibit exotic topological properties.

  18. Bio Organic-Semiconductor Field-Effect Transistor (BioFET) Based on Deoxyribonucleic Acid (DNA) Gate Dielectric

    Science.gov (United States)

    2010-03-31

    floating gate devices and metal-insulator-oxide-semiconductor (MIOS) devices. First attempts to use polarizable gate insulators in combination with...bulk of the semiconductor (ii) Due to the polarizable gate dielectric (iii) dipole polarization and (iv)electret effect due to mobile ions in the...characterization was carried out under an argon environment inside the glove box. An Agilent model E5273A with a two source-measurement unit instrument was

  19. Modelling of bulk superconductor magnetization

    International Nuclear Information System (INIS)

    Ainslie, M D; Fujishiro, H

    2015-01-01

    This paper presents a topical review of the current state of the art in modelling the magnetization of bulk superconductors, including both (RE)BCO (where RE = rare earth or Y) and MgB 2 materials. Such modelling is a powerful tool to understand the physical mechanisms of their magnetization, to assist in interpretation of experimental results, and to predict the performance of practical bulk superconductor-based devices, which is particularly important as many superconducting applications head towards the commercialization stage of their development in the coming years. In addition to the analytical and numerical techniques currently used by researchers for modelling such materials, the commonly used practical techniques to magnetize bulk superconductors are summarized with a particular focus on pulsed field magnetization (PFM), which is promising as a compact, mobile and relatively inexpensive magnetizing technique. A number of numerical models developed to analyse the issues related to PFM and optimise the technique are described in detail, including understanding the dynamics of the magnetic flux penetration and the influence of material inhomogeneities, thermal properties, pulse duration, magnitude and shape, and the shape of the magnetization coil(s). The effect of externally applied magnetic fields in different configurations on the attenuation of the trapped field is also discussed. A number of novel and hybrid bulk superconductor structures are described, including improved thermal conductivity structures and ferromagnet–superconductor structures, which have been designed to overcome some of the issues related to bulk superconductors and their magnetization and enhance the intrinsic properties of bulk superconductors acting as trapped field magnets. Finally, the use of hollow bulk cylinders/tubes for shielding is analysed. (topical review)

  20. Hybrid High-Temperature-Superconductor–Semiconductor Tunnel Diode

    Directory of Open Access Journals (Sweden)

    Alex Hayat

    2012-12-01

    Full Text Available We report the demonstration of hybrid high-T_{c}-superconductor–semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-T_{c}-superconductor–semiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a d-wave-superconductor–normal-material junction. Additional junctions are demonstrated using Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} combined with graphite or Bi_{2}Te_{3}. Our results pave the way for new methods in unconventional superconductivity studies, novel materials, and quantum technology applications.

  1. Organic / IV, III-V Semiconductor Hybrid Solar Cells

    Directory of Open Access Journals (Sweden)

    Pang-Leen Ong

    2010-03-01

    Full Text Available We present a review of the emerging class of hybrid solar cells based on organic-semiconductor (Group IV, III-V, nanocomposites, which states separately from dye synthesized, polymer-metal oxides and organic-inorganic (Group II-VI nanocomposite photovoltaics. The structure of such hybrid cell comprises of an organic active material (p-type deposited by coating, printing or spraying technique on the surface of bulk or nanostructured semiconductor (n-type forming a heterojunction between the two materials. Organic components include various photosensitive monomers (e.g., phtalocyanines or porphyrines, conjugated polymers, and carbon nanotubes. Mechanisms of the charge separation at the interface and their transport are discussed. Also, perspectives on the future development of such hybrid cells and comparative analysis with other classes of photovoltaics of third generation are presented.

  2. Magnetic excitations in ferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

    2009-01-01

    Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

  3. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  4. Moralized Health-Related Persuasion Undermines Social Cohesion

    Directory of Open Access Journals (Sweden)

    Susanne Täuber

    2018-06-01

    Full Text Available Integrating theory and research on persuasion, moralization, and intergroup relations, the present research aims to highlight the far-reaching impact of health-related persuasion on society. I propose that governments’ health-related persuasion leads to the emergence of new social norms, and in particular moral norms. Importantly, moral norms provide strong behavioral imperatives and are seen as binding for group members. This suggests that moralized persuasion has a strong potential to divide society along the lines of citizens who conform to and citizens who deviate from health-related moral norms. Thus, departing from the traditional focus on targets of persuasion, the present research focuses on those holding a moralized view on health and lifestyle. Key aspects of social cohesion as defined by the OECD (2011 have been tested across four studies. The main hypothesis tested is that those conforming to the norm (e.g., non-smokers, normal weight people, people with healthy lifestyles will stigmatize those deviating from the norm (e.g., smokers, overweight people, people with unhealthy lifestyles. Flowing from stigmatization, less inclusion, lower solidarity with and greater endorsement of unequal treatment of those deviating from the moral norm are predicted. Four survey studies (total N = 1568 examining the proposed associations among non-smokers, normal weight people, and employees with healthy lifestyles are presented. The studies provide unanimous support for the hypothesis, with meta-analysis providing further support for the reliability of the findings. Consistent across studies, social cohesion indicators were negatively affected by health moralization through stigmatization of those deviating from health-related moral norms. Findings highlight an under-acknowledged potential of moralized health-related persuasion to divide society, thereby undermining cohesion and the achievement of important societal goals. In the discussion

  5. An enhancement of spin polarization by multiphoton pumping in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M. Idrish, E-mail: m.miah@griffith.edu.au [Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)

    2011-08-15

    Highlights: {yields} Multiphoton pumping and spin generation in semiconductors. {yields} Optical selection rules for inter-band transitions. {yields} Calculations of spin polarization using band-energy model and the second order perturbation theory. {yields} Enhancement of the electronic spin polarization. - Abstract: A pump-probe spectroscopic study has been carried out in zinc-blende bulk semiconductors. In the semiconductor samples, a spin-polarized carrier population is produced by the absorption of a monochromatic circularly polarized light beam with two-photon energy above the direct band gap in bulk semiconductors. The production of a carrier population with a net spin is a consequence of the optical selection rules for the heavy-hole and light-hole valence-to-conduction band transitions. This production is probed by the spin-dependent transmission of the samples in the time domain. The spin polarization of the conduction-band-electrons in dependences of delay of the probe beam as well as of pumping photon energy is estimated. The spin polarization is found to depolarize rapidly for pumping energy larger than the energy gap of the split-off band to the conduction band. From the polarization decays, the spin relaxation times are also estimated. Compared to one-photon pumping, the results, however, show that an enhancement of the spin-polarization is achieved by multiphoton excitation of the samples. The experimental results are compared with those obtained in calculations using second order perturbation theory of the spin transport model. A good agreement between experiment and theory is obtained. The observed results are discussed in details.

  6. An enhancement of spin polarization by multiphoton pumping in semiconductors

    International Nuclear Information System (INIS)

    Miah, M. Idrish

    2011-01-01

    Highlights: → Multiphoton pumping and spin generation in semiconductors. → Optical selection rules for inter-band transitions. → Calculations of spin polarization using band-energy model and the second order perturbation theory. → Enhancement of the electronic spin polarization. - Abstract: A pump-probe spectroscopic study has been carried out in zinc-blende bulk semiconductors. In the semiconductor samples, a spin-polarized carrier population is produced by the absorption of a monochromatic circularly polarized light beam with two-photon energy above the direct band gap in bulk semiconductors. The production of a carrier population with a net spin is a consequence of the optical selection rules for the heavy-hole and light-hole valence-to-conduction band transitions. This production is probed by the spin-dependent transmission of the samples in the time domain. The spin polarization of the conduction-band-electrons in dependences of delay of the probe beam as well as of pumping photon energy is estimated. The spin polarization is found to depolarize rapidly for pumping energy larger than the energy gap of the split-off band to the conduction band. From the polarization decays, the spin relaxation times are also estimated. Compared to one-photon pumping, the results, however, show that an enhancement of the spin-polarization is achieved by multiphoton excitation of the samples. The experimental results are compared with those obtained in calculations using second order perturbation theory of the spin transport model. A good agreement between experiment and theory is obtained. The observed results are discussed in details.

  7. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1990-01-01

    The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

  8. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

  9. Semiconductor device comprising a pn-heterojunction

    NARCIS (Netherlands)

    2007-01-01

    An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

  10. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  11. Applying automatic item generation to create cohesive physics testlets

    Science.gov (United States)

    Mindyarto, B. N.; Nugroho, S. E.; Linuwih, S.

    2018-03-01

    Computer-based testing has created the demand for large numbers of items. This paper discusses the production of cohesive physics testlets using an automatic item generation concepts and procedures. The testlets were composed by restructuring physics problems to reveal deeper understanding of the underlying physical concepts by inserting a qualitative question and its scientific reasoning question. A template-based testlet generator was used to generate the testlet variants. Using this methodology, 1248 testlet variants were effectively generated from 25 testlet templates. Some issues related to the effective application of the generated physics testlets in practical assessments were discussed.

  12. Cucker-Smale Flocking with Bounded Cohesive and Repulsive Forces

    Directory of Open Access Journals (Sweden)

    Qiang Song

    2013-01-01

    Full Text Available This paper proposes two Cucker-Smale-type flocking models by introducing both cohesive and repulsive forces to second-order multiagent systems. Under some mild conditions on the initial state of the flocking system, it is shown that the velocity consensus of the agents can be reached independent of the parameter which describes the decay of communication rates. In particular, the collision between any two agents can always be avoided by designing an appropriate bounded repulsive function based on the initial energy of the flock. Numerical examples are given to demonstrate the effectiveness of the theoretical analysis.

  13. A Test to Express Diagnostic Cohesion of Football Team

    OpenAIRE

    Alexandra O. Savinkina

    2017-01-01

    We proposed to assess the cohesion of a football team by its subject-goal and subject-value unity according to the A.V. Petrovsky theory. Goal unity was measured by the degree of compliance of the priority targets for various players in the team. Values were estimated by the coincidence of the ideas about a perfect football player. On the basis of the provisional diagnosis of the six teams, we had made the lists of goals and values. The tests were piloted on 35 football teams. The results all...

  14. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

    NARCIS (Netherlands)

    2008-01-01

    The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

  15. Bulk metallic glass matrix composites

    International Nuclear Information System (INIS)

    Choi-Yim, H.; Johnson, W.L.

    1997-01-01

    Composites with a bulk metallic glass matrix were synthesized and characterized. This was made possible by the recent development of bulk metallic glasses that exhibit high resistance to crystallization in the undercooled liquid state. In this letter, experimental methods for processing metallic glass composites are introduced. Three different bulk metallic glass forming alloys were used as the matrix materials. Both ceramics and metals were introduced as reinforcement into the metallic glass. The metallic glass matrix remained amorphous after adding up to a 30 vol% fraction of particles or short wires. X-ray diffraction patterns of the composites show only peaks from the second phase particles superimposed on the broad diffuse maxima from the amorphous phase. Optical micrographs reveal uniformly distributed particles in the matrix. The glass transition of the amorphous matrix and the crystallization behavior of the composites were studied by calorimetric methods. copyright 1997 American Institute of Physics

  16. Interactive effects of team cohesion on perceived efficacy in semi-professional sport.

    Science.gov (United States)

    Marcos, Francisco Miguel Leo; Miguel, Pedro Antonio Sánchez; Oliva, David Sánchez; Calvo, Tomás García

    2010-01-01

    The present study examined the relationships among cohesion, self-efficacy, coaches' perceptions of their players' efficacy at the individual level and athletes' perceptions of their teammates' efficacy. Participants (n = 76) recruited from four semi- professional soccer and basketball teams completed cohesiveness and efficacy questionnaires who. Data were analyzed through a correlational methodology. Results indicated significant correlations between self-efficacy and task cohesion and social cohesion. Regression analysis results suggest task cohesion positively related to coaches and teammate's perception of efficacy. These results have implications for practitioners in terms of the importance of team building to enhance team cohesion and feelings of efficacy. Key pointsThis paper increases the knowledge about soccer and basketball match analysis.Give normative values to establish practice and match objectives.Give applications ideas to connect research with coaches' practice.

  17. Group cohesion and starting status in successful and less successful elite volleyball teams.

    Science.gov (United States)

    Spink, K S

    1992-08-01

    The main purpose of this study was to examine the relationship between members' perceptions of group cohesion and starting status in elite volleyball teams. The results of the study revealed that the form of the cohesion-starting status relationship was moderated by the variable of success. The results for less successful teams revealed that differences did emerge between specific measures of cohesion endorsed by starters and non-starters. No such differences in cohesion emerged when the starters and non-starters on successful teams were compared. These results provide initial support for the suggestion that the most successful teams are the ones where the perceptions of cohesiveness by starters and non-starters are similar. A secondary purpose of the study was to determine whether those teams that were the most successful and similar in their members' perceptions of cohesiveness, were also the teams whose members have the most positive outcome expectancy. The results supported this prediction.

  18. Selective, electrochemical etching of a semiconductor

    Science.gov (United States)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  19. Precise, Self-Limited Epitaxy of Ultrathin Organic Semiconductors and Heterojunctions Tailored by van der Waals Interactions.

    Science.gov (United States)

    Wu, Bing; Zhao, Yinghe; Nan, Haiyan; Yang, Ziyi; Zhang, Yuhan; Zhao, Huijuan; He, Daowei; Jiang, Zonglin; Liu, Xiaolong; Li, Yun; Shi, Yi; Ni, Zhenhua; Wang, Jinlan; Xu, Jian-Bin; Wang, Xinran

    2016-06-08

    Precise assembly of semiconductor heterojunctions is the key to realize many optoelectronic devices. By exploiting the strong and tunable van der Waals (vdW) forces between graphene and organic small molecules, we demonstrate layer-by-layer epitaxy of ultrathin organic semiconductors and heterostructures with unprecedented precision with well-defined number of layers and self-limited characteristics. We further demonstrate organic p-n heterojunctions with molecularly flat interface, which exhibit excellent rectifying behavior and photovoltaic responses. The self-limited organic molecular beam epitaxy (SLOMBE) is generically applicable for many layered small-molecule semiconductors and may lead to advanced organic optoelectronic devices beyond bulk heterojunctions.

  20. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  1. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  2. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  3. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  4. Semiconductor technology program. Progress briefs

    Science.gov (United States)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  5. Semiconductor radiation detectors. Device physics

    International Nuclear Information System (INIS)

    Lutz, G.

    2007-01-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  6. Self-assembling peptide semiconductors

    Science.gov (United States)

    Tao, Kai; Makam, Pandeeswar; Aizen, Ruth; Gazit, Ehud

    2017-01-01

    Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems. PMID:29146781

  7. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  8. Bulk viscosity and cosmological evolution

    International Nuclear Information System (INIS)

    Beesham, A.

    1996-01-01

    In a recent interesting paper, Pimentel and Diaz-Rivera (Nuovo Cimento B, 109(1994) 1317) have derived several solutions with bulk viscosity in homogeneous and isotropic cosmological models. They also discussed the properties of these solutions. In this paper the authors relate the solutions of Pimentel and Diaz-Rivera by simple transformations to previous solutions published in the literature, showing that all the solutions can be derived from the known existing ones. Drawbacks to these approaches of studying bulk viscosity are pointed out, and better approaches indicated

  9. Relationship Among Team Collective Efficacy, Cohesion, and Coaching Competency in Sports

    OpenAIRE

    Manning, Clayton T.

    2007-01-01

    A team's performance in any sport can be predicted by many factors. Some of these factors include team collective efficacy, team cohesiveness, and coaching competency. Currently, there is little research investigating the relationships among teams' beliefs about their capabilities, their level of cohesion, and their perceptions of coaching competency on overall sport performance. The purpose of this study was to document the relationship among collective efficacy, cohesion, and coaching on sp...

  10. Interactive Effects of Team Cohesion on Perceived Efficacy in Semi-Professional Sport

    OpenAIRE

    Marcos, Francisco Miguel Leo; Miguel, Pedro Antonio Sánchez; Oliva, David Sánchez; Calvo, Tomás García

    2010-01-01

    The present study examined the relationships among cohesion, self-efficacy, coaches’ perceptions of their players’ efficacy at the individual level and athletes’ perceptions of their teammates’ efficacy. Participants (n = 76) recruited from four semi- professional soccer and basketball teams completed cohesiveness and efficacy questionnaires who. Data were analyzed through a correlational methodology. Results indicated significant correlations between self-efficacy and task cohesion and socia...

  11. Effects of bulk and surface conductivity on the performance of CdZnTe pixel detectors

    DEFF Research Database (Denmark)

    Bolotnikov, A.E.; Chen, C.M.H.; Cook, W.R.

    2002-01-01

    , the existence of a thin (10-100 A) oxide layer on the surface of CZT, formed during the fabrication process, affects both bulk and surface leakage currents. We demonstrate that the measured I-V dependencies of bulk current can be explained by considering the CZT detector as a metal-semiconductor-metal system......-collection efficiency in detectors with multicontact geometry; some fraction of the electric field lines that originated on the cathode intersects the surface areas between the pixel contacts where the charge produced by an ionizing particle gets trapped. To overcome this effect, we place a grid of thin electrodes...

  12. Wake fields in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1994-05-01

    It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

  13. Semiconductor research with reactor neutrons

    International Nuclear Information System (INIS)

    Kimura, Itsuro

    1992-01-01

    Reactor neutrons play an important role for characterization of semiconductor materials as same as other advanced materials. On the other hand reactor neutrons bring about not only malignant irradiation effects called radiation damage, but also useful effects such as neutron transmutation doping and defect formation for opto-electronics. Research works on semiconductor materials with the reactor neutrons of the Kyoto University Reactor (KUR) are briefly reviewed. In this review, a stress is laid on the present author's works. (author)

  14. Semiconductor crystal high resolution imager

    Science.gov (United States)

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  15. Dissipative chaos in semiconductor superlattices

    Directory of Open Access Journals (Sweden)

    F. Moghadam

    2008-03-01

    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  16. Reducing leakage current in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

    2018-03-06

    A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

  17. Optical orientation in ferromagnet/semiconductor hybrids

    International Nuclear Information System (INIS)

    Korenev, V L

    2008-01-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

  18. Optical orientation in ferromagnet/semiconductor hybrids

    Science.gov (United States)

    Korenev, V. L.

    2008-11-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

  19. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    OpenAIRE

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  20. Semiconductors for plasmonics and metamaterials

    DEFF Research Database (Denmark)

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

  1. Ripening of Semiconductor Nanoplatelets.

    Science.gov (United States)

    Ott, Florian D; Riedinger, Andreas; Ochsenbein, David R; Knüsel, Philippe N; Erwin, Steven C; Mazzotti, Marco; Norris, David J

    2017-11-08

    Ostwald ripening describes how the size distribution of colloidal particles evolves with time due to thermodynamic driving forces. Typically, small particles shrink and provide material to larger particles, which leads to size defocusing. Semiconductor nanoplatelets, thin quasi-two-dimensional (2D) particles with thicknesses of only a few atomic layers but larger lateral dimensions, offer a unique system to investigate this phenomenon. Experiments show that the distribution of nanoplatelet thicknesses does not defocus during ripening, but instead jumps sequentially from m to (m + 1) monolayers, allowing precise thickness control. We investigate how this counterintuitive process occurs in CdSe nanoplatelets. We develop a microscopic model that treats the kinetics and thermodynamics of attachment and detachment of monomers as a function of their concentration. We then simulate the growth process from nucleation through ripening. For a given thickness, we observe Ostwald ripening in the lateral direction, but none perpendicular. Thicker populations arise instead from nuclei that capture material from thinner nanoplatelets as they dissolve laterally. Optical experiments that attempt to track the thickness and lateral extent of nanoplatelets during ripening appear consistent with these conclusions. Understanding such effects can lead to better synthetic control, enabling further exploration of quasi-2D nanomaterials.

  2. A semiconductor laser device

    Energy Technology Data Exchange (ETDEWEB)

    Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

    1984-03-17

    A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

  3. Semiconductor integrated circuits

    International Nuclear Information System (INIS)

    Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

    1979-01-01

    An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

  4. Impurity gettering in semiconductors

    Science.gov (United States)

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  5. Semiconductor acceleration sensor

    Science.gov (United States)

    Ueyanagi, Katsumichi; Kobayashi, Mitsuo; Goto, Tomoaki

    1996-09-01

    This paper reports a practical semiconductor acceleration sensor especially suited for automotive air bag systems. The acceleration sensor includes four beams arranged in a swastika structure. Two piezoresistors are formed on each beam. These eight piezoresistors constitute a Wheatstone bridge. The swastika structure of the sensing elements, an upper glass plate and a lower glass plate exhibit the squeeze film effect which enhances air dumping, by which the constituent silicon is prevented from breakdown. The present acceleration sensor has the following features. The acceleration force component perpendicular to the sensing direction can be cancelled. The cross-axis sensitivity is less than 3 percent. And, the erroneous offset caused by the differences between the thermal expansion coefficients of the constituent materials can be canceled. The high aspect ratio configuration realized by plasma etching facilitates reducing the dimensions and improving the sensitivity of the acceleration sensor. The present acceleration sensor is 3.9 mm by 3.9 mm in area and 1.2 mm in thickness. The present acceleration sensor can measure from -50 to +50 G with sensitivity of 0.275 mV/G and with non-linearity of less than 1 percent. The acceleration sensor withstands shock of 3000 G.

  6. [Family cohesion associated with oral health, socioeconomic factors and health behavior].

    Science.gov (United States)

    Ferreira, Luale Leão; Brandão, Gustavo Antônio Martins; Garcia, Gustavo; Batista, Marília Jesus; Costa, Ludmila da Silva Tavares; Ambrosano, Gláucia Maria Bovi; Possobon, Rosana de Fátima

    2013-08-01

    Overall health surveys have related family cohesion to socio-economic status and behavioral factors. The scope of this study was to investigate the association between family cohesion and socio-economic, behavioral and oral health factors. This was a, cross-sectional study with two-stage cluster sampling. The random sample consisted of 524 adolescents attending public schools in the city of Piracicaba-SP. Variables were evaluated by self-applied questionnaires and caries and periodontal disease were assessed by DMF-T and CPI indices. The adolescent's perception of family cohesion was assessed using the family adaptability and cohesion scale. Univariate and multinomial logistic regression shows that adolescents with low family cohesion were more likely than those with medium family cohesion to have low income (OR 2,28 95% CI 1,14- 4,55), presence of caries (OR 2,23 95% CI 1,21-4,09), less than two daily brushings (OR 1,91 95% CI 1,03-3,54). Adolescents with high family cohesion were more likely than those with medium family cohesion to have high income and protective behavior against the habit of smoking. Thus, the data shows that adolescent perception of family cohesion was associated with behavioral, socio-economic and oral health variables, indicating the importance of an integral approach to patient health.

  7. Cohesive delamination and frictional contact on joining surface via XFEM

    Directory of Open Access Journals (Sweden)

    Francesco Parrinello

    2018-02-01

    Full Text Available In the present paper, the complex mechanical behaviour of the surfaces joining two differentbodies is analysed by a cohesive-frictional interface constitutive model. The kinematical behaviouris characterized by the presence of discontinuous displacement fields, that take place at the internalconnecting surfaces, both in the fully cohesive phase and in the delamination one. Generally, in order tocatch discontinuous displacement fields, internal connecting surfaces (adhesive layers are modelled bymeans of interface elements, which connect, node by node, the meshes of the joined bodies, requiringthe mesh to be conforming to the geometry of the single bodies and to the relevant connecting surface.In the present paper, the Extended Finite Element Method (XFEM is employed to model, both fromthe geometrical and from the kinematical point of view, the whole domain, including the connectedbodies and the joining surface. The joining surface is not discretized by specific finite elements, butit is defined as an internal discontinuity surface, whose spatial position inside the mesh is analyticallydefined. The proposed approach is developed for two-dimensional composite domains, formed by twoor more material portions joined together by means of a zero thickness adhesive layer. The numericalresults obtained with the proposed approach are compared with the results of the classical interfacefinite element approach. Some examples of delamination and frictional contact are proposed withlinear, circular and curvilinear adhesive layer.

  8. Disaggregation of small, cohesive rubble pile asteroids due to YORP

    Science.gov (United States)

    Scheeres, D. J.

    2018-04-01

    The implication of small amounts of cohesion within relatively small rubble pile asteroids is investigated with regard to their evolution under the persistent presence of the YORP effect. We find that below a characteristic size, which is a function of cohesive strength, density and other properties, rubble pile asteroids can enter a "disaggregation phase" in which they are subject to repeated fissions after which the formation of a stabilizing binary system is not possible. Once this threshold is passed rubble pile asteroids may be disaggregated into their constituent components within a finite time span. These constituent components will have their own spin limits - albeit potentially at a much higher spin rate due to the greater strength of a monolithic body. The implications of this prediction are discussed and include modification of size distributions, prevalence of monolithic bodies among meteoroids and the lifetime of small rubble pile bodies in the solar system. The theory is then used to place constraints on the strength of binary asteroids characterized as a function of their type.

  9. Improving the geotechnical behavior of sand through cohesive admixtures

    Directory of Open Access Journals (Sweden)

    Mohie eldin Mohamed Afify Elmashad

    2018-04-01

    Full Text Available Irrigation projects in Egypt have been facing tremendous challenges, mostly is the scarcity of irrigation water. The current research presents the effect of different cohesive admixture on the conductivity of siliceous sand in general and its other geotechnical properties. Two different types of conventional swelling clay from (Toshka, 6th of October as well as bentonite were used to construct the irrigation canals and embankment. The results indicated that increase in the plasticity properties of the treated soil also decrease the permeability and infiltration. Moreover, the dry density of 2.08 t/m3 was obtained from sand and 20% 6th of October mixture, also the CBR of 31.20% were obtained from sand and 8% 6th of October mixture. Increasing the bentonite ratio increases the cohesion and decreasing the permeability. The swelling ratios of sand 6th of October Clay mixture is equal to 0.28%, and the fictitious stress at which the swelling ratio is nil, is equal to 16 kPa. Keywords: Sand, Swelling clay, Bentonite, Compaction test, Consolidation test, Triaxial test

  10. Zirconium based bulk metallic glasses

    International Nuclear Information System (INIS)

    Dey, G.K.; Neogy, S.; Savalia, R.T.; Tewari, R.; Srivastava, D.; Banerjee, S.

    2006-01-01

    Metallic glasses have come into prominence in recent times because their nanocrystalline atomic arrangement imparts many useful and unusual properties to these metallic solids. In this study, bulk glasses have been obtained in Zr based multicomponent alloy by induction melting these alloys in silica crucibles and casting these in form of rods 3 and 6 mm in diameter in a copper mould

  11. Longitudinal bulk acoustic mass sensor

    DEFF Research Database (Denmark)

    Hales, Jan Harry; Teva, Jordi; Boisen, Anja

    2009-01-01

    A polycrystalline silicon longitudinal bulk acoustic cantilever is fabricated and operated in air at 51 MHz. A mass sensitivity of 100 Hz/fg (1 fg=10(-15) g) is obtained from the preliminary experiments where a minute mass is deposited on the device by means of focused ion beam. The total noise...

  12. Bulk viscosity of molecular fluids

    Science.gov (United States)

    Jaeger, Frederike; Matar, Omar K.; Müller, Erich A.

    2018-05-01

    The bulk viscosity of molecular models of gases and liquids is determined by molecular simulations as a combination of a dilute gas contribution, arising due to the relaxation of internal degrees of freedom, and a configurational contribution, due to the presence of intermolecular interactions. The dilute gas contribution is evaluated using experimental data for the relaxation times of vibrational and rotational degrees of freedom. The configurational part is calculated using Green-Kubo relations for the fluctuations of the pressure tensor obtained from equilibrium microcanonical molecular dynamics simulations. As a benchmark, the Lennard-Jones fluid is studied. Both atomistic and coarse-grained force fields for water, CO2, and n-decane are considered and tested for their accuracy, and where possible, compared to experimental data. The dilute gas contribution to the bulk viscosity is seen to be significant only in the cases when intramolecular relaxation times are in the μs range, and for low vibrational wave numbers (<1000 cm-1); This explains the abnormally high values of bulk viscosity reported for CO2. In all other cases studied, the dilute gas contribution is negligible and the configurational contribution dominates the overall behavior. In particular, the configurational term is responsible for the enhancement of the bulk viscosity near the critical point.

  13. Investigating the settling dynamics of cohesive silt particles with particle-resolving simulations

    Science.gov (United States)

    Sun, Rui; Xiao, Heng; Sun, Honglei

    2018-01-01

    The settling of cohesive sediment is ubiquitous in aquatic environments, and the study of the settling process is important for both engineering and environmental reasons. In the settling process, the silt particles show behaviors that are different from non-cohesive particles due to the influence of inter-particle cohesive force. For instance, the flocs formed in the settling process of cohesive silt can loosen the packing, and thus the structural densities of cohesive silt beds are much smaller than that of non-cohesive sand beds. While there is a consensus that cohesive behaviors depend on the characteristics of sediment particles (e.g., Bond number, particle size distribution), little is known about the exact influence of these characteristics on the cohesive behaviors. In addition, since the cohesive behaviors of the silt are caused by the inter-particle cohesive forces, the motions of and the contacts among silt particles should be resolved to study these cohesive behaviors in the settling process. However, studies of the cohesive behaviors of silt particles in the settling process based on particle-resolving approach are still lacking. In the present work, three-dimensional settling process is investigated numerically by using CFD-DEM (Computational Fluid Dynamics-Discrete Element Method). The inter-particle collision force, the van der Waals force, and the fluid-particle interaction forces are considered. The numerical model is used to simulate the hindered settling process of silt based on the experimental setup in the literature. The results obtained in the simulations, including the structural densities of the beds, the characteristic lines, and the particle terminal velocity, are in good agreement with the experimental observations in the literature. To the authors' knowledge, this is the first time that the influences of non-dimensional Bond number and particle polydispersity on the structural densities of silt beds have been investigated separately

  14. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  15. From kinetic to collective behavior in thermal transport on semiconductors and semiconductor nanostructures

    International Nuclear Information System (INIS)

    Tomas, C. de; Lopeandia, A. F.; Alvarez, F. X.; Cantarero, A.

    2014-01-01

    We present a model which deepens into the role that normal scattering has on the thermal conductivity in semiconductor bulk, micro, and nanoscale samples. Thermal conductivity as a function of the temperature undergoes a smooth transition from a kinetic to a collective regime that depends on the importance of normal scattering events. We demonstrate that in this transition, the key point to fit experimental data is changing the way to perform the average on the scattering rates. We apply the model to bulk Si with different isotopic compositions obtaining an accurate fit. Then we calculate the thermal conductivity of Si thin films and nanowires by only introducing the effective size as additional parameter. The model provides a better prediction of the thermal conductivity behavior valid for all temperatures and sizes above 30 nm with a single expression. Avoiding the introduction of confinement or quantum effects, the model permits to establish the limit of classical theories in the study of the thermal conductivity in nanoscopic systems

  16. From kinetic to collective behavior in thermal transport on semiconductors and semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Tomas, C. de; Lopeandia, A. F.; Alvarez, F. X., E-mail: xavier.alvarez@uab.cat [Department of Physics, Universitat Autònoma de Barcelona, 08193 Bellaterra, Catalonia (Spain); Cantarero, A. [Materials Science Institute, University of Valencia, P. O. Box 22085, 46071 Valencia (Spain)

    2014-04-28

    We present a model which deepens into the role that normal scattering has on the thermal conductivity in semiconductor bulk, micro, and nanoscale samples. Thermal conductivity as a function of the temperature undergoes a smooth transition from a kinetic to a collective regime that depends on the importance of normal scattering events. We demonstrate that in this transition, the key point to fit experimental data is changing the way to perform the average on the scattering rates. We apply the model to bulk Si with different isotopic compositions obtaining an accurate fit. Then we calculate the thermal conductivity of Si thin films and nanowires by only introducing the effective size as additional parameter. The model provides a better prediction of the thermal conductivity behavior valid for all temperatures and sizes above 30 nm with a single expression. Avoiding the introduction of confinement or quantum effects, the model permits to establish the limit of classical theories in the study of the thermal conductivity in nanoscopic systems.

  17. From kinetic to collective behavior in thermal transport on semiconductors and semiconductor nanostructures

    Science.gov (United States)

    de Tomas, C.; Cantarero, A.; Lopeandia, A. F.; Alvarez, F. X.

    2014-04-01

    We present a model which deepens into the role that normal scattering has on the thermal conductivity in semiconductor bulk, micro, and nanoscale samples. Thermal conductivity as a function of the temperature undergoes a smooth transition from a kinetic to a collective regime that depends on the importance of normal scattering events. We demonstrate that in this transition, the key point to fit experimental data is changing the way to perform the average on the scattering rates. We apply the model to bulk Si with different isotopic compositions obtaining an accurate fit. Then we calculate the thermal conductivity of Si thin films and nanowires by only introducing the effective size as additional parameter. The model provides a better prediction of the thermal conductivity behavior valid for all temperatures and sizes above 30 nm with a single expression. Avoiding the introduction of confinement or quantum effects, the model permits to establish the limit of classical theories in the study of the thermal conductivity in nanoscopic systems.

  18. Density functional theory and beyond-opportunities for quantum methods in materials modeling semiconductor technology

    International Nuclear Information System (INIS)

    Shankar, Sadasivan; Simka, Harsono; Haverty, Michael

    2008-01-01

    In the semiconductor industry, the use of new materials has been increasing with the advent of nanotechnology. As critical dimensions decrease, and the number of materials increases, the interactions between heterogeneous materials themselves and processing increase in complexity. Traditionally, applications of ab initio techniques are confined to electronic structure and band gap calculations of bulk materials, which are then used in coarse-grained models such as mesoscopic and continuum models. Density functional theory is the most widely used ab initio technique that was successfully extended to several applications. This paper illustrates applications of density functional theory to semiconductor processes and proposes further opportunities for use of such techniques in process development

  19. Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Chubenko, E. B., E-mail: eugene.chubenko@gmail.com; Redko, S. V.; Sherstnyov, A. I.; Petrovich, V. A.; Kotov, D. A.; Bondarenko, V. P. [Belarusian State University of Information and RadioElectronics (Belarus)

    2016-03-15

    The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.

  20. Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

    International Nuclear Information System (INIS)

    Chubenko, E. B.; Redko, S. V.; Sherstnyov, A. I.; Petrovich, V. A.; Kotov, D. A.; Bondarenko, V. P.

    2016-01-01

    The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.

  1. COHESIVE STRENGTH OF DENTIN RESISTÊNCIA COESIVA DA DENTINA

    Directory of Open Access Journals (Sweden)

    Flávio Fernando DEMARCO

    1997-07-01

    Full Text Available The bond strength of dentin adhesives to dentin has increased after each generation. Although dentin substratum is part of the bonding process, little importance has been given to measure dentin cohesive strength. The aim of this study was to evaluate the cohesive strength of dentin in human canines. Seventeen non carious canines were selected. All of them had been extracted for more than one year. The teeth were ground until dentin square samples with approximately 2 X 2 mm were obtained. They were embedded in acrylic resin and subjected to shear stress, in a Wolpert Machine, at a crosshead speed of 0.5 mm/min. The mean cohesive strength of dentin in shear mode was 33.95 (+-9.72 MPa. The fracture surfaces were observed under a X40 magnification. A finite element analysis was performed to observe the stress distribution as related to the shear test. The failure pattern was compatible with the shear test and also with the stress distribution in the finite element analysisA resistência de união dos adesivos dentinários tem sido aumentada com o desenvolvimento de cada nova geração. Pouca importância tem sido dada à resistência coesiva da dentina. A proposta deste estudo foi avaliar a resistência coesiva da dentina. Dezessete caninos humanos hígidos, os quais tinham sido extraídos há mais de um ano, foram usados. Os dentes foram desgastados até a obtenção de corpos-de-prova em dentina, de formato quadrangular, com tamanho aproximado de 2 X 2 mm. Os dentes foram incluídos em resina acrílica e, então, submetidos ao teste de cisalhamento em uma máquina de ensaios universais Wolpert, com uma velocidade de 0,5 mm/min. A resistência coesiva média da dentina no teste de cisalhamento foi de 33,95 (+- 9,72 MPa. O tipo de fratura foi analisado com um aumento de 40X. Foi realizada uma análise com elemento finito, para observar a distribuição do estresse relacionada com o teste de cisalhamento. O padrão de fratura encontrado foi compat

  2. Signaling Elaboration: Combining French Gerund Clauses with Lexical Cohesion Cues

    Directory of Open Access Journals (Sweden)

    Marianne Vergez-Couret

    2012-07-01

    Full Text Available In this paper, we focus on the Elaboration relation and on its automatic identification in French, using the theoretical framework of Segmented Discourse Representation Theory (SDRT. One of the information sources identified by the SDRT framework to infer the Elaboration relation is based on the existence of a potential subsumption link between the eventualities at stake, depending on lexical semantics and world knowledge. We investigate this claim by combining a weak syntactic marker of the Elaboration relation, namely the gerund clause, with lexical cohesion cues. We aim at automatically identifying gerund clauses which are Elaborations by finding cohesive links between the host main clause and the gerund clause. This approach makes it possible to accurately detect few cases of intra-sentential Elaborations in our corpus, confirming the fact that lexical cohesion cues are relevant for this task.Dans cet article, nous nous focalisons sur la relation d’Élaboration en français, telle qu’elle est décrite dans le modèle théorique de la SDRT (Segmented Discourse Representation Theory, et sur son identification automatique. Selon la SDRT, une des sources d’information permettant d’inférer la relation d’Élaboration est basée sur l’existence d’un lien de subsomption entre les types des éventualités des segments à relier, indiquant que le type de la seconde éventualité est un sous-type de celui de la première dans la sémantique lexicale des éventualités ou grâce à des connaissances du monde. Nous proposons de contribuer à cette question en combinant un indice de la relation d’Élaboration, i. e. la construction syntaxique du gérondif, et des indices de cohésion lexicale. Notre objectif est d’identifier automatiquement des propositions gérondives qui sont des Élaborations en repérant des indices de cohésion lexicale entre la proposition principale et la proposition gérondive. Cette approche permet de d

  3. The effect of coarse gravel on cohesive sediment entrapment in an annular flume

    Science.gov (United States)

    Glasbergen, K.; Stone, M.; Krishnappan, B.; Dixon, J.; Silins, U.

    2015-03-01

    While cohesive sediment generally represents a small fraction (armour layer of the gravel bed (>16 Pa), cohesive materials trapped within the gravel bed will be entrained and transported into the Glenmore Reservoir, where sediment-associated nutrients may pose treatment challenges to the drinking water supply.

  4. "Sticking Together": The Adolescent Experience of the Cohesion Process in Rural School Counseling Groups

    Science.gov (United States)

    Gray, Tara M.; Rubel, Deborah

    2018-01-01

    The purpose of this study was to develop a grounded theory of how adolescents experience the cohesion process in rural school counseling groups. A total of 20 individual interviews with 7 participants were conducted. Data analysis generated the central category of the cohesion process as "sticking together," which describes a "tight…

  5. Cohesive subgroup formation : enabling and constraining effects of social capital in strategic technology alliance networks

    NARCIS (Netherlands)

    Duysters, G.M.; Lemmens, C.E.A.V.

    2002-01-01

    In this paper we will examine the role of embeddedness and social capital in the process of cohesive subgroup formation in strategic technology alliance networks. More in particular, we will investigate the social mechanisms that enable and enforce cohesive subgroup formation. We will argue that the

  6. Cohesion and Trauma: An Examination of a Collegiate Women's Volleyball Team

    Science.gov (United States)

    Fletcher, Teresa B.; Meyer, Barbara B.

    2009-01-01

    This study examined the effects of Adventure Based Counseling (i.e., a low-element challenge program) on the cohesion of a collegiate women's volleyball team. Results suggest postintervention improvements in team cohesion. The support created in the challenge experience also transferred to the players helping one another to grieve the untimely…

  7. Social Capital or Social Cohesion: What Matters for Subjective Well-Being?

    Science.gov (United States)

    Klein, Carlo

    2013-01-01

    The theoretical analysis of the concepts of social capital and of social cohesion shows that social capital should be considered as a micro concept whereas social cohesion, being a broader concept than social capital, is a more appropriate concept for macro analysis. Therefore, we suggest that data on the individual level should only be used to…

  8. Family Cohesion in the Lives of Mexican American and European American Parents

    Science.gov (United States)

    Behnke, Andrew O.; MacDermid, Shelley M.; Coltrane, Scott L.; Parke, Ross D.; Duffy, Sharon; Widaman, Keith F.

    2008-01-01

    This study investigated similarities and differences in relations between stress and parenting behaviors for 509 Mexican American and European American fathers and mothers in Southern California. Our model posited that family cohesion mediates the relation between stressors and parenting behavior, and we found that family cohesion strongly…

  9. The effect of coarse gravel on cohesive sediment entrapment in an annular flume

    Directory of Open Access Journals (Sweden)

    K. Glasbergen

    2015-03-01

    Full Text Available While cohesive sediment generally represents a small fraction (16 Pa, cohesive materials trapped within the gravel bed will be entrained and transported into the Glenmore Reservoir, where sediment-associated nutrients may pose treatment challenges to the drinking water supply.

  10. Cohesion Features in ESL Reading: Comparing Beginning, Intermediate and Advanced Textbooks

    Science.gov (United States)

    Plakans, Lia; Bilki, Zeynep

    2016-01-01

    This study of English as a second language (ESL) reading textbooks investigates cohesion in reading passages from 27 textbooks. The guiding research questions were whether and how cohesion differs across textbooks written for beginning, intermediate, and advanced second language readers. Using a computational tool called Coh-Metrix, textual…

  11. Influence of Sport Education on Group Cohesion in University Physical Education

    Science.gov (United States)

    Jenkins, Jayne M.; Alderman, Brandon L.

    2011-01-01

    The Sport Education ("SE") curricular model incorporated within university physical education Basic Instruction Program (BIP) may increase group cohesion. This study's purpose was to identify student perceptions of a BIP course taught within "SE," and investigate group cohesion in differing activity content. Participants…

  12. Performance auditing in EU cohesion policy: what do we know and what should we know?

    NARCIS (Netherlands)

    Damen, M.; Groenendijk, Nico

    2012-01-01

    Recently, the European Commission has put forward proposals for the next program period of EU Cohesion Policy (EUCP). Part of these proposals is an increased emphasis on performance management. This paper analyses what we know so far on performance management of EU cohesion funds. It will be argued

  13. Social cohesiveness and absenteeism: The relationship between characteristics of employees and short-term absenteeism

    NARCIS (Netherlands)

    Sanders, Karin; Nauta, Aukje

    2004-01-01

    This study tries to explain the relationship between characteristics of the employees (e.g., gender and working hours) and short-term absenteeism by examining the social cohesiveness of a team. Hypotheses are formulated concerning gender and working hours of employees, social cohesiveness, and

  14. Interparental Conflict and Family Cohesion: Predictors of Loneliness, Social Anxiety, and Social Avoidance in Late Adolescence.

    Science.gov (United States)

    Johnson, H. Durell; LaVoie, Joseph C.; Mahoney, Molly

    2001-01-01

    Examined relationship of family cohesion and interparental conflict with loneliness in 124 late adolescents. Found that feelings of loneliness were related to perceived levels of interparental conflict for males and females, and to decreased family cohesion for females. Feelings of social anxiety and social avoidance were related to feelings of…

  15. How to deal with legal uncertainty: Managing and Audit Authorities in Cohesion Policy

    NARCIS (Netherlands)

    Meuleman, Lysette; Brenninkmeijer, A.F.M.

    2017-01-01

    Cohesion policy (ERDF, ESF and CF) is implemented in a system of shared management. Signals received from some EU countries indicate that legal uncertainty is created for beneficiaries of cohesion policy funds due to differences in interpretation of, mostly national, regulation. This is a problem

  16. Social network cohesion in school classes promotes prosocial behavior.

    Science.gov (United States)

    van den Bos, Wouter; Crone, Eveline A; Meuwese, Rosa; Güroğlu, Berna

    2018-01-01

    Adolescence is a key period of social development at the end of which individuals are expected to take on adult social roles. The school class, as the most salient peer group, becomes the prime environment that impacts social development during adolescence. Using social network analyses, we investigated how individual and group level features are related to prosocial behavior and social capital (generalized trust). We mapped the social networks within 22 classrooms of adolescents aged between 12 and 18 years (N = 611), and collected data on social behaviors towards peers. Our results indicate that individuals with high centrality show both higher levels of prosocial behavior and relational aggression. Importantly, greater social cohesion in the classroom was associated with (1) reduced levels of antisocial behavior towards peers and (2) increased generalized trust. These results provide novel insights in the relationship between social structure and social behavior, and stress the importance of the school environment in the development of not only intellectual but also social capital.

  17. Cohesion energy calculations for ternary ionic novel crystals

    International Nuclear Information System (INIS)

    Vazquez P, G.; Cabrera, E.; Mijangos, R.R.; Valdez, E.; Duarte, C.

    2001-01-01

    The present work calculates the value of the link energy of a crystalline ternary structure newly formed by alkali halides. The ternary structure prepared with different concentrations of KCl x KBrRbCl 2 maintains a very good miscibility and stability. The calculation is based on the use of a generalization of the Vegard law (which generally is valid for binary compounds) for calculating the values of the lattice constant and the repulsive m exponent. The value of the lattice parameter given by X-ray diffractometry agrees with the close approximation of the calculated value of the method used. It also compares the value of energy cohesion obtained by the Born expression with more complex approximations. (Author)

  18. Stress-compatible embedded cohesive crack in CST element

    DEFF Research Database (Denmark)

    Olesen, John Forbes; Poulsen, Peter Noe

    2010-01-01

    A simple element with an embedded strong discontinuity for modeling cohesive cracking of concrete is presented. The element differs from previous elements of the embedded type, in that a consistent stress field is obtained by direct enforcement of stress continuity across the crack....... The displacement discontinuity is modeled in an XFEM fashion; however, the discontinuous displacement field is special, allowing for the direct enforcement of stress continuity. This in turn allows for elimination of extra degrees of freedom necessary for describing the crack deformations, thus the element has...... the same number of freedoms as its continuous basis: CST. The good performance of the element is demonstrated by its ability to simulate threepoint bending of a notched concrete beam. The advantage of the element is its simplicity and the straightforward implementation of it. Handling situations...

  19. Mechanisms of de cohesion in cutting aluminium matrix composites

    International Nuclear Information System (INIS)

    Cichosz, Piotr; Karolczak, Pawel; Kuzinovski, Mikolaj

    2008-01-01

    In this paper properties and applications of aluminium matrix composites are presented with a composite reinforced with saffil fibres selected for topical study. Behavior of matrix and reinforcement during machining with a cutting tool is analyzed. The paper presents an explosive quick-stop device designed to obtain undisturbed machined surface for examination. Meso hardness measurements of deformed structure, resultant chips and built-up-edge were carried out. Scanning micrographs of machined surface are presented with morphology and types of chips analysed. Values of the fibrousness angle ψ and thickening index k h of chip are evaluated. The research performed has enabled the authors to define mechanisms of e cohesion during cutting aluminium matrix composites. The results received for composite material are compared with those pertinent to aluminum alloys.

  20. Simulation of semiconductor devices

    International Nuclear Information System (INIS)

    Oriato, D.

    2001-09-01

    In this thesis a drift diffusion model coupled with self-consistent solutions of Poisson's and Schroedinger's equations, is developed and used to investigate the operation of Gunn diodes and GaN-based LEDs. The model also includes parameters derived from Monte Carlo calculations of the simulated devices. In this way the characteristics of a Monte Carlo approach and of a quantum solver are built into a fast and flexible drift-diffusion model that can be used for testing a large number of heterostructure designs in a time-effective way. The full model and its numerical implementation are described in chapter 2. In chapter 3 the theory of Gunn diodes is presented. A basic model of the dynamics of domain formation and domain transport is described with particular regard to accumulation and dipole domains. Several modes of operation of the Gunn device are described, varying from the resonance mode to the quenched mode. Details about transferred electron devices and negative differential resistance in semiconductor materials are given. In chapter 4 results from the simulation of a simple conventional gunn device confirm the importance of the doping condition at the cathode. Accumulation or dipole domains are achieved respectively with high and low doping densities. The limits of a conventional Gunn diode are explained and solved by introducing the heterostructure Gunn diode. This new design consists of a conventional GaAs transit region coupled with an electron launcher at the cathode, made using an AIGaAs heterostructure step. Simulations show the importance of the insertion of a thin highly-doped layer between the transit region and the electron launcher in order to improve device operation. Chapter 5 is an introduction to Ill-nitrides, in particular GaN and its alloy ln-GaN. We outline the discrepancy in the elastic and piezoelectric parameters found in the literature. Strain, dislocations and piezoelectricity are presented as the main features of a InGaN/GaN system

  1. Bulk Superconductors in Mobile Application

    Science.gov (United States)

    Werfel, F. N.; Delor, U. Floegel-; Rothfeld, R.; Riedel, T.; Wippich, D.; Goebel, B.; Schirrmeister, P.

    We investigate and review concepts of multi - seeded REBCO bulk superconductors in mobile application. ATZ's compact HTS bulk magnets can trap routinely 1 T@77 K. Except of magnetization, flux creep and hysteresis, industrial - like properties as compactness, power density, and robustness are of major device interest if mobility and light-weight construction is in focus. For mobile application in levitated trains or demonstrator magnets we examine the performance of on-board cryogenics either by LN2 or cryo-cooler application. The mechanical, electric and thermodynamical requirements of compact vacuum cryostats for Maglev train operation were studied systematically. More than 30 units are manufactured and tested. The attractive load to weight ratio is more than 10 and favours group module device constructions up to 5 t load on permanent magnet (PM) track. A transportable and compact YBCO bulk magnet cooled with in-situ 4 Watt Stirling cryo-cooler for 50 - 80 K operation is investigated. Low cooling power and effective HTS cold mass drives the system construction to a minimum - thermal loss and light-weight design.

  2. The Cohesiveness of Muslim Pangestu Members in Salatiga, Central Java

    Directory of Open Access Journals (Sweden)

    S. Suciati

    2015-04-01

    Full Text Available The drying of spirituality and weakening of cohesiveness in the midst of materialistic hedonistic modern world become major challenge for the adherents of official religions in Indonesia. The practice of religions is considered too much focusing on ritual aspects. Therefore, those teachings cannot give the real meaningfulness of religious life. Consequently, some adherents of official religions begin to see other spiritual/mysticism sects. This study describes the social cohesiveness among muslims who become members of Pangestu, a spiritual-mysticism sect widely spreading among Javanese society in Indonesia. This research shows that the Pangestu in Salatiga, Central Java, can fulfill social, economic, and spiritual needs of its members. Among the underlying factors that make Pangestu succeed to meet its members’ needs and expectations are the capability of the members to intensely communicate with each other through meetings and bawaraos (Jv, informal gathering, the great concern between members, good-example of leadership, the defense of Pangestu’s good name, and the satisfaction in experiencing meaningfulness of religious practices.[Kekeringan spiritual dan lemahnya kebersamaan di tengah dunia modern yang serba hedonistik menjadi tantangan utama bagi para pemeluk agama di Indonesia. Praktik-praktik keagamaan terlalu banyak terfokus pada aspek ritual, sehingga ajaran agama tidak mampu menghadirkan praktek-praktek keagamaan yang benar-benar bermakna. Hal ini mendorong sebagian pemeluk agama untuk melirik aliran kepercayaan dan kebatinan. Artikel ini mendeskripsikan keguyuban sosial di antara orang-orang Islam yang menjadi anggota Pangestu, sebuah aliran kepercayaan di Indonesia yang banyak menyebar terutama di kalangan masyarakat Jawa. Penelitian ini menunjukkan bahwa Pangestu di Salatiga, Jawa Tegah, mampu memenuhi kebutuhan sosial, ekonomi, dan spiritual para anggotanya. Di antara faktor yang menentukan keberhasilan Pangestu dalam memenuhi

  3. High pressure semiconductor physics I

    CERN Document Server

    Willardson, R K; Paul, William; Suski, Tadeusz

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tra...

  4. Introduction to cathodoluminescence in semiconductors

    International Nuclear Information System (INIS)

    Dussac, M.

    1985-01-01

    The use of cathodoluminescence in a scanning electron microscope leads to acquire a spectrum in a place of the sample surface, or to register the intensity profile of a special emission band along a scanning line, or also to realize a map of the irradiated sample. Composition variations can then, at ambient temperature, be determined, also defects can be shown, together with grain joints and dislocations, radiative and non radiative regions can be distinguished and, at low temperature, elementary processes of luminescence can be studied and impurities identified in semiconductors. Through this analysis method is applicable to every insulating or semiconductor material (that is to say to every material having a gap), in this article only crystalline semi-conductor will be studied [fr

  5. Catalysts, Protection Layers, and Semiconductors

    DEFF Research Database (Denmark)

    Chorkendorff, Ib

    2015-01-01

    Hydrogen is the simplest solar fuel to produce and in this presentation we shall give a short overview of the pros and cons of various tandem devices [1]. The large band gap semiconductor needs to be in front, but apart from that we can chose to have either the anode in front or back using either...... acid or alkaline conditions. Since most relevant semiconductors are very prone to corrosion the advantage of using buried junctions and using protection layers offering shall be discussed [2-4]. Next we shall discuss the availability of various catalysts for being coupled to these protections layers...... and how their stability may be evaluated [5, 6]. Examples of half-cell reaction using protection layers for both cathode and anode will be discussed though some of recent examples under both alkaline and acidic conditions. Si is a very good low band gap semiconductor and by using TiO2 as a protection...

  6. High mobility emissive organic semiconductor

    Science.gov (United States)

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

  7. Thiophene-Based Organic Semiconductors.

    Science.gov (United States)

    Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

    2017-10-24

    Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

  8. An Investigation into the Use of Cohesive Devises in Iranian High School EFL Textbooks

    Directory of Open Access Journals (Sweden)

    Mansour Shabani

    2015-07-01

    Full Text Available The present study aimed at probing into the use of grammatical and lexical cohesive subdevices in Iranian high school EFL textbooks. To this end, the reading sections of three high school EFL textbooks and one pre-university EFL textbook were analyzed in terms of the distribution of grammatical and lexical cohesive subdevices. The results of One-way ANOVA illustrated that: athere are no significant differences among the frequencies of grammatical cohesive subdevices across grade 1 high school EFL textbook and the pre-university EFL textbook, bthere are significant differences among the frequencies of grammatical cohesive subdevices across grades 2 and 3 high school EFL textbooks. Moreover, the results of Chi-Square test showed that the significant values of all of the lexical cohesive subdevices were higher than .05 across each of the Iranian EFL high school textbooks. These findings can be beneficial for textbook writers, materials developers and EFL teachers.

  9. Mode I Cohesive Law Characterization of Through-Crack Propagation in a Multidirectional Laminate

    Science.gov (United States)

    Bergan, Andrew C.; Davila, Carlos G.; Leone, Frank A.; Awerbuch, Jonathan; Tan, Tein-Min

    2014-01-01

    A method is proposed and assessed for the experimental characterization of through-the-thickness crack propagation in multidirectional composite laminates with a cohesive law. The fracture toughness and crack opening displacement are measured and used to determine a cohesive law. Two methods of computing fracture toughness are assessed and compared. While previously proposed cohesive characterizations based on the R-curve exhibit size effects, the proposed approach results in a cohesive law that is a material property. The compact tension specimen configuration is used to propagate damage while load and full-field displacements are recorded. These measurements are used to compute the fracture toughness and crack opening displacement from which the cohesive law is characterized. The experimental results show that a steady-state fracture toughness is not reached. However, the proposed method extrapolates to steady-state and is demonstrated capable of predicting the structural behavior of geometrically-scaled specimens.

  10. Bedform development and morphodynamics in mixed cohesive sediment substrates: the importance of winnowing and flocculation

    Science.gov (United States)

    Ye, Leiping; Parsons, Daniel; Manning, Andrew

    2016-04-01

    There remains a lack of process-based knowledge of sediment dynamics within flows over bedforms generated in complex mixtures of cohesionless sand and biologically-active cohesive muds in natural estuarine flow systems. The work to be presented forms a part of the UK NERC "COHesive BEDforms (COHBED)" project which aims to fill this gap in knowledge. Herein results from a field survey in sub-tidal zone of Dee estuary (NW, England) and a set of large-scale laboratory experiments, conducted using mixtures of non-cohesive sands, cohesive muds and Xanthan gum (as a proxy for the biological stickiness of Extracellular Polymeric Substances (EPS)) will be presented. The results indicate the significance of biological-active cohesive sediments in controlling winnowing rates and flocculation dynamics, which contributes significantly to rates of bedform evolution.

  11. Sex differences in the development of perceived family cohesion and depressive symptoms in Taiwanese adolescents.

    Science.gov (United States)

    Sze, Tat-Ming; Hsieh, Pei-Jung; Lin, Sieh-Hwa; Chen, I-Jung

    2013-08-01

    This study investigates the progression of family cohesion perceptions and depressive symptoms during the character development stage in adolescents. Data were used from the Taiwan Youth Project. The final sample comprised 2,690 adolescents with 1,312 girls (48.8%; M age = 13.0 yr., SD = 0.5). Latent curve growth analysis was employed to explore these developments. Seventh-grade girls reported greater family cohesion and more depressive symptoms than boys, and boys reported greater growth in family cohesion than girls. However, progression of depressive symptoms was not associated with the child's sex. Higher perceived family cohesion in Grade 7 correlated with less increase of depressive symptoms from Grades 9 to 11. The long-term positive influence of family cohesion on depressive symptoms is discussed.

  12. Catalytic photooxidation of pentachlorophenol using semiconductor nanoclusters

    Energy Technology Data Exchange (ETDEWEB)

    WILCOXON,JESS P.

    2000-04-17

    Pentachlorophenol (PCP) is a toxic chlorinated aromatic molecule widely used as fungicide, a bactericide and a wood preservation, and thus ubiquitous in the environment. The authors report photo-oxidation of PCP using a variety of nanosize semiconductor metal oxides and sulfides in both aqueous and polar organic solvents and compare the photo-oxidation kinetics of these nanoclusters to widely studied bulk powders like Degussa P-25 TiO{sub 2} and CdS. They study both the light intensity dependence of PCP photooxidation for nanosize SnO{sub 2} and the size dependence of PCP photooxidation for both nanosize SnO{sub 2} and MoS{sub 2}. They find an extremely strong size dependence for the latter which they attribute to its size-dependent band gap and the associated change in redox potentials due to quantum confinement of the hole-electron pair. The authors show that nanosize MoS{sub 2} with a diameter of d=3.0 nm and an absorbance edge of {approximately}450 nm is a very effective photooxidation catalyst for complete PCP mineralization, even when using only visible light irradiation.

  13. Effects of bulk charged impurities on the bulk and surface transport in three-dimensional topological insulators

    Energy Technology Data Exchange (ETDEWEB)

    Skinner, B.; Chen, T.; Shklovskii, B. I., E-mail: shklovsk@physics.spa.umn.edu [University of Minnesota, Fine Theoretical Physics Institute (United States)

    2013-09-15

    In the three-dimensional topological insulator (TI), the physics of doped semiconductors exists literally side-by-side with the physics of ultrarelativistic Dirac fermions. This unusual pairing creates a novel playground for studying the interplay between disorder and electronic transport. In this mini-review, we focus on the disorder caused by the three-dimensionally distributed charged impurities that are ubiquitous in TIs, and we outline the effects it has on both the bulk and surface transport in TIs. We present self-consistent theories for Coulomb screening both in the bulk and at the surface, discuss the magnitude of the disorder potential in each case, and present results for the conductivity. In the bulk, where the band gap leads to thermally activated transport, we show how disorder leads to a smaller-than-expected activation energy that gives way to variable-range hopping at low temperatures. We confirm this enhanced conductivity with numerical simulations that also allow us to explore different degrees of impurity compensation. For the surface, where the TI has gapless Dirac modes, we present a theory of disorder and screening of deep impurities, and we calculate the corresponding zero-temperature conductivity. We also comment on the growth of the disorder potential in passing from the surface of the TI into the bulk. Finally, we discuss how the presence of a gap at the Dirac point, introduced by some source of time-reversal symmetry breaking, affects the disorder potential at the surface and the mid-gap density of states.

  14. Effects of bulk charged impurities on the bulk and surface transport in three-dimensional topological insulators

    International Nuclear Information System (INIS)

    Skinner, B.; Chen, T.; Shklovskii, B. I.

    2013-01-01

    In the three-dimensional topological insulator (TI), the physics of doped semiconductors exists literally side-by-side with the physics of ultrarelativistic Dirac fermions. This unusual pairing creates a novel playground for studying the interplay between disorder and electronic transport. In this mini-review, we focus on the disorder caused by the three-dimensionally distributed charged impurities that are ubiquitous in TIs, and we outline the effects it has on both the bulk and surface transport in TIs. We present self-consistent theories for Coulomb screening both in the bulk and at the surface, discuss the magnitude of the disorder potential in each case, and present results for the conductivity. In the bulk, where the band gap leads to thermally activated transport, we show how disorder leads to a smaller-than-expected activation energy that gives way to variable-range hopping at low temperatures. We confirm this enhanced conductivity with numerical simulations that also allow us to explore different degrees of impurity compensation. For the surface, where the TI has gapless Dirac modes, we present a theory of disorder and screening of deep impurities, and we calculate the corresponding zero-temperature conductivity. We also comment on the growth of the disorder potential in passing from the surface of the TI into the bulk. Finally, we discuss how the presence of a gap at the Dirac point, introduced by some source of time-reversal symmetry breaking, affects the disorder potential at the surface and the mid-gap density of states

  15. Spectroscopic characterization of III-V semiconductor nanomaterials

    Science.gov (United States)

    Crankshaw, Shanna Marie

    III-V semiconductor materials form a broad basis for optoelectronic applications, including the broad basis of the telecom industry as well as smaller markets for high-mobility transistors. In a somewhat analogous manner as the traditional silicon logic industry has so heavily depended upon process manufacturing development, optoelectronics often relies instead on materials innovations. This thesis focuses particularly on III-V semiconductor nanomaterials, detailed characterization of which is invaluable for translating the exhibited behavior into useful applications. Specifically, the original research described in these thesis chapters is an investigation of semiconductors at a fundamental materials level, because the nanostructures in which they appear crystallize in quite atypical forms for the given semiconductors. Rather than restricting the experimental approaches to any one particular technique, many different types of optical spectroscopies are developed and applied where relevant to elucidate the connection between the crystalline structure and exhibited properties. In the first chapters, for example, a wurtzite crystalline form of the prototypical zincblende III-V binary semiconductor, GaAs, is explored through polarization-dependent Raman spectroscopy and temperature-dependent photoluminescence, as well as second-harmonic generation (SHG). The altered symmetry properties of the wurtzite crystalline structure are particularly evident in the Raman and SHG polarization dependences, all within a bulk material realm. A rather different but deeply elegant aspect of crystalline symmetry in GaAs is explored in a separate study on zincblende GaAs samples quantum-confined in one direction, i.e. quantum well structures, whose quantization direction corresponds to the (110) direction. The (110) orientation modifies the low-temperature electron spin relaxation mechanisms available compared to the usual (001) samples, leading to altered spin coherence times explored

  16. Organic semiconductors in sensor applications

    CERN Document Server

    Malliaras, George; Owens, Róisín

    2008-01-01

    Organic semiconductors offer unique characteristics such as tunability of electronic properties via chemical synthesis, compatibility with mechanically flexible substrates, low-cost manufacturing, and facile integration with chemical and biological functionalities. These characteristics have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this rapidly emerging field by discussing both optical and electrical sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques to enhance specificity are outlined, and models for the sensor response are described.

  17. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  18. Introduction to semiconductor manufacturing technology

    CERN Document Server

    2012-01-01

    IC chip manufacturing processes, such as photolithography, etch, CVD, PVD, CMP, ion implantation, RTP, inspection, and metrology, are complex methods that draw upon many disciplines. [i]Introduction to Semiconductor Manufacturing Technologies, Second Edition[/i] thoroughly describes the complicated processes with minimal mathematics, chemistry, and physics; it covers advanced concepts while keeping the contents accessible to readers without advanced degrees. Designed as a textbook for college students, this book provides a realistic picture of the semiconductor industry and an in-depth discuss

  19. Wide gap semiconductor microwave devices

    International Nuclear Information System (INIS)

    Buniatyan, V V; Aroutiounian, V M

    2007-01-01

    A review of properties of wide gap semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, GaN and AlGaN/GaN that are relevant to electronic, optoelectronic and microwave applications is presented. We discuss the latest situation and perspectives based on experimental and theoretical results obtained for wide gap semiconductor devices. Parameters are taken from the literature and from some of our theoretical works. The correspondence between theoretical results and parameters of devices is critically analysed. (review article)

  20. Detection of radioactivity by semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1991-01-01

    The class of detectors discussed in this chapter has a responsive component involving a diode, a junction between two types of semiconductor materials. Although diode detectors are not particularly efficient in counting radioactive emissions, they are superior to other commercially available detectors in spectroscopy. Consequently, diode detectors are used extensively for quanlitative purposes and for quantitative purposes when mixtures of radionuclides are present, not the usual situation with biological or medical research. Topics addressed in this chapter are as follows: Band Theory; Semiconductors and Junctions; and Radiation Detectors. 6 refs., 14 figs

  1. Modeling of semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  2. Semiconductor X-ray spectrometers

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1978-02-01

    An outline is given of recent developments in particle and photon induced x-ray fluorescence (XRF) analysis. Following a brief description of the basic mechanism of semiconductor detector operation a comparison is made between semiconductor detectors, scintillators and gas filled proportional devices. Detector fabrication and cryostat design are described in more detail and the effects of various device parameters on system performance, such as energy resolution, count rate capability, efficiency, microphony, etc. are discussed. The main applications of these detectors in x-ray fluorescence analysis, electron microprobe analysis, medical and pollution studies are reviewed

  3. Integrating magnetism into semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Zakharchenya, Boris P; Korenev, Vladimir L [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2005-06-30

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  4. Integrating magnetism into semiconductor electronics

    International Nuclear Information System (INIS)

    Zakharchenya, Boris P; Korenev, Vladimir L

    2005-01-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  5. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  6. Method and apparatus for blending fine and cohesive powders in a fluidized bed with gas injection through ball valves

    International Nuclear Information System (INIS)

    1981-01-01

    A fluidized bed blender is described, suitable for blending powders including a mixture of fine and cohesive powders and in particular for converting a heterogeneous mixture of fine and cohesive UO 2 into a homogeneous mixture. (U.K.)

  7. Enhancement of high-energy distribution tail in Monte Carlo semiconductor simulations using a Variance Reduction Scheme

    Directory of Open Access Journals (Sweden)

    Vincenza Di Stefano

    2009-11-01

    Full Text Available The Multicomb variance reduction technique has been introduced in the Direct Monte Carlo Simulation for submicrometric semiconductor devices. The method has been implemented in bulk silicon. The simulations show that the statistical variance of hot electrons is reduced with some computational cost. The method is efficient and easy to implement in existing device simulators.

  8. The interface of the ferromagnetic metal CoS2 and the nonmagnetic semiconductor FeS2

    KAUST Repository

    Nazir, S.; Schwingenschlö gl, Udo

    2010-01-01

    semiconductor shows a metallic character. The CoS2 stays close to half-metallicity at the interface, while the FeS2 becomes metallic. The magnetic moment of the Co atoms at the interface slightly decreases as compared to the bulk value and a small moment

  9. Self-phase modulation of a single-cycle terahertz pulse by nonlinear free-carrier response in a semiconductor

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2012-01-01

    We investigate the self-phase modulation (SPM) of a single-cycle terahertz pulse in a semiconductor, using bulk n-GaAs as a model system. The SPM arises from the heating of free electrons in the electric field of the terahertz pulse, leading to an ultrafast reduction of the plasma frequency...

  10. Waveguide based external cavity semiconductor lasers

    NARCIS (Netherlands)

    Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

    2012-01-01

    We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

  11. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  12. Fundamentals of semiconductors physics and materials properties

    CERN Document Server

    Yu, Peter Y

    2005-01-01

    Provides detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. This textbook emphasizes understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors and features an extensive collection of tables of material parameters, figures, and problems.

  13. Structural and electronic properties of GaAs and GaP semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Rani, Anita [Guru Nanak College for girls, Sri Muktsar Sahib, Punjab (India); Kumar, Ranjan [Department of Physics, Panjab University, Chandigarh-160014 (India)

    2015-05-15

    The Structural and Electronic properties of Zinc Blende phase of GaAs and GaP compounds are studied using self consistent SIESTA-code, pseudopotentials and Density Functional Theory (DFT) in Local Density Approximation (LDA). The Lattice Constant, Equillibrium Volume, Cohesive Energy per pair, Compressibility and Band Gap are calculated. The band gaps calcultated with DFT using LDA is smaller than the experimental values. The P-V data fitted to third order Birch Murnaghan equation of state provide the Bulk Modulus and its pressure derivatives. Our Structural and Electronic properties estimations are in agreement with available experimental and theoretical data.

  14. Nuclear radiation detection by a variband semiconductor

    International Nuclear Information System (INIS)

    Volkov, A.S.

    1981-01-01

    Possibilities of using a variband semiconductor for detecting nuclear radiations are considered. It is shown that the variaband quasielectric field effectively collects charges induced by a nuclear particle only at a small mean free path in the semiconductor (up to 100 μm), the luminescence spectrum of the variband semiconductor when a nuclear particle gets into it, in principle, permits to determine both the energy and mean free path in the semiconductor (even at large mean free paths) [ru

  15. Ultrafast THz Saturable Absorption in Doped Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, Matthias C.

    2011-01-01

    We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.......We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields....

  16. Laser semiconductor diode integrated with frequency doubler

    International Nuclear Information System (INIS)

    Tighineanu, I.; Dorogan, V.; Suruceanu, G.

    2003-01-01

    The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

  17. Diode having trenches in a semiconductor region

    Energy Technology Data Exchange (ETDEWEB)

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  18. Sister chromatid cohesion defects are associated with chromosome instability in Hodgkin lymphoma cells

    International Nuclear Information System (INIS)

    Sajesh, Babu V; Lichtensztejn, Zelda; McManus, Kirk J

    2013-01-01

    Chromosome instability manifests as an abnormal chromosome complement and is a pathogenic event in cancer. Although a correlation between abnormal chromosome numbers and cancer exist, the underlying mechanisms that cause chromosome instability are poorly understood. Recent data suggests that aberrant sister chromatid cohesion causes chromosome instability and thus contributes to the development of cancer. Cohesion normally functions by tethering nascently synthesized chromatids together to prevent premature segregation and thus chromosome instability. Although the prevalence of aberrant cohesion has been reported for some solid tumors, its prevalence within liquid tumors is unknown. Consequently, the current study was undertaken to evaluate aberrant cohesion within Hodgkin lymphoma, a lymphoid malignancy that frequently exhibits chromosome instability. Using established cytogenetic techniques, the prevalence of chromosome instability and aberrant cohesion was examined within mitotic spreads generated from five commonly employed Hodgkin lymphoma cell lines (L-1236, KM-H2, L-428, L-540 and HDLM-2) and a lymphocyte control. Indirect immunofluorescence and Western blot analyses were performed to evaluate the localization and expression of six critical proteins involved in the regulation of sister chromatid cohesion. We first confirmed that all five Hodgkin lymphoma cell lines exhibited chromosome instability relative to the lymphocyte control. We then determined that each Hodgkin lymphoma cell line exhibited cohesion defects that were subsequently classified into mild, moderate or severe categories. Surprisingly, ~50% of the mitotic spreads generated from L-540 and HDLM-2 harbored cohesion defects. To gain mechanistic insight into the underlying cause of the aberrant cohesion we examined the localization and expression of six critical proteins involved in cohesion. Although all proteins produced the expected nuclear localization pattern, striking differences in RAD21

  19. Automation and Integration in Semiconductor Manufacturing

    OpenAIRE

    Liao, Da-Yin

    2010-01-01

    Semiconductor automation originates from the prevention and avoidance of frauds in daily fab operations. As semiconductor technology and business continuously advance and grow, manufacturing systems must aggressively evolve to meet the changing technical and business requirements in this industry. Semiconductor manufacturing has been suffering pains from islands of automation. The problems associated with these systems are limited

  20. Phase diagram of nanoscale alloy particles used for vapor-liquid-solid growth of semiconductor nanowires.

    Science.gov (United States)

    Sutter, Eli; Sutter, Peter

    2008-02-01

    We use transmission electron microscopy observations to establish the parts of the phase diagram of nanometer sized Au-Ge alloy drops at the tips of Ge nanowires (NWs) that determine their temperature-dependent equilibrium composition and, hence, their exchange of semiconductor material with the NWs. We find that the phase diagram of the nanoscale drop deviates significantly from that of the bulk alloy, which explains discrepancies between actual growth results and predictions on the basis of the bulk-phase equilibria. Our findings provide the basis for tailoring vapor-liquid-solid growth to achieve complex one-dimensional materials geometries.