WorldWideScience

Sample records for semiconductor strain gages

  1. Internally Mounting Strain Gages

    Science.gov (United States)

    Jett, J. R., Jr.

    1984-01-01

    Technique for mounting strain gages inside bolt or cylinder simultaneously inserts gage, attached dowel segment, and length of expandable tubing. Expandable tubing holds gage in place while adhesive cures, assuring even distribution of pressure on gage and area gaged.

  2. Development of high temperature strain gage, (5)

    International Nuclear Information System (INIS)

    Yuuki, Hiroshi; Kobayashi, Yukio; Kanai, Kenji; Yamaura, Yoshio

    1976-01-01

    Development and improvement of resistance wire type strain gages usable for experimental measurement of thermal strains generated at high temperature in various structures and equipments that consist of a Fast Breeder Reactor have been carried out, and various characteristics of the strain gages have been investigated. Based on the results obtained up to now, development and research of this time mainly aim to improve strain and fatigue characteristics. As the results, characteristics of strain gages with sensing elements of nichrome V are improved, specifically mechanical hysteresis is decreased, strain limit is increased, etc. Also, improvement is recognized in thermal output, and it becomes clear that dummy gages work effectively. However, a filling method of MgO and an inserting method of active-dummy elements are selected as primary objects to improve strain characteristics, and many hours are taken for these objects, so confirmations of characteristics of platinum-tungsten strain gages, strain sensing elements of which are troublesome to produce, have not been completely done, though the performance of the gages has been improved in several points. As to nichrome V strain gages, there is a fair prospect of obtaining ones, specifications of which are quite close to the goal, though problems in manufacturing technics remain for future. As to platinum-tungsten strain gages, it is expected that similar strain gages to nichrome V are obtainable by improvement in manufacturing of sensing elements. (auth.)

  3. Properties of strain gages at cryogenic temperature

    International Nuclear Information System (INIS)

    Shibata, Nobuo; Fujiyoshi, Toshimitsu.

    1978-01-01

    At the time of developing superconduction generators, the stress measurement for rotor parts is required to grasp the safety and performance of the rotor at cryogenic temperature, which is cooled with liquid helium. In case of carrying out the stress measurement with strain gages, the problems are as follows. The strain gages and lead wires are exposed to cryogenic temperature from 4 to 10 K and strong magnetic field of about 3T, and subjected to high centrifugal acceleration of about 500G. In order to establish the techniques of the stress measurement under such conditions, the adhesives and damp-proof coatings for strain gages and strain gages themselves in Japan and foreign countries were examined on the properties at cryogenic temperature. As for the properties of strain gages, mainly the apparent strain owing to temperature change was investigated, and the change of the gage factors was studies only at liquid nitrogen temperature. The stress measurement with strain gages at low temperature had been studied in detail down to liquid nitrogen temperature concerning LNG tanks. The experimental apparatus, the samples, the testing methods and the test results of cooling tests on adhesives and damp-proof coatings, and the temperature characteristics of strain gages are reported. The usable adhesives and coatings were found, and correction by accurate temperature measurement is required for apparent strain. (Kako, I.)

  4. Evaluation results of the 700 deg C Chinese strain gages

    Science.gov (United States)

    Hobart, H. F.

    1984-01-01

    There is a continuing interest and need for resistance strain gages capable of making static strain measurements on components located in the hot section of gas turbine engines. A paper by Tsen-tai Wu describes the development and evaluation of high temperature gauges fabricated from specially developed Fe-Cr-Al-V-Ti-Y alloy wire. Several of these gages and a quantity of P12-2 ceramic adhesive were purchased for evaluation. Nine members of the aircraft turbine engine community were invited to participate in an evaluation of these gages. Each participant was sent one strain gage, a small amount of ceramic adhesive, instructions for mounting the gage on a test beam, and a set of suggestions for the experiment. Data on gage factor variation with temperature, apparent strain, and drift are discussed.

  5. Strain gage based determination of mixed mode SIFs

    Science.gov (United States)

    Murthy, K. S. R. K.; Sarangi, H.; Chakraborty, D.

    2018-05-01

    Accurate determination of mixed mode stress intensity factors (SIFs) is essential in understanding and analysis of mixed mode fracture of engineering components. Only a few strain gage determination of mixed mode SIFs are reported in literatures and those also do not provide any prescription for radial locations of strain gages to ensure accuracy of measurement. The present investigation experimentally demonstrates the efficacy of a proposed methodology for the accurate determination of mixed mode I/II SIFs using strain gages. The proposed approach is based on the modified Dally and Berger's mixed mode technique. Using the proposed methodology appropriate gage locations (optimal locations) for a given configuration have also been suggested ensuring accurate determination of mixed mode SIFs. Experiments have been conducted by locating the gages at optimal and non-optimal locations to study the efficacy of the proposed approach. The experimental results from the present investigation show that highly accurate SIFs (0.064%) can be determined using the proposed approach if the gages are located at the suggested optimal locations. On the other hand, results also show the very high errors (212.22%) in measured SIFs possible if the gages are located at non-optimal locations. The present work thus clearly substantiates the importance of knowing the optimal locations of the strain gages apriori in accurate determination of SIFs.

  6. Theory and Practice of Shear/Stress Strain Gage Hygrometry

    Science.gov (United States)

    Shams, Qamar A.; Fenner, Ralph L.

    2006-01-01

    Mechanical hygrometry has progressed during the last several decades from crude hygroscopes to state-of-the art strain-gage sensors. The strain-gage devices vary from different metallic beams to strain-gage sensors using cellulose crystallite elements, held in full shear restraint. This old technique is still in use but several companies are now actively pursuing development of MEMS miniaturized humidity sensors. These new sensors use polyimide thin film for water vapor adsorption and desorption. This paper will provide overview about modern humidity sensors.

  7. Evaluation test on stability of high temperature strain gage

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Toshimi (Kyowa Electronic Instruments Co. Ltd., Tokyo (Japan)); Ito, Haruhiko; Tanaka, Isao; Komori, Yoshihiro

    1983-08-01

    This report deals with the results on a stability test of high temperature strain gage which is utilized for development of the Stethoscope for OGL - 1 Components in Elevated Temperature Services (ab. SOCETS). The test has proved that the weldable strain gage (KHC - 20 - G5) exhibits excellent stability at 500/sup 0/C during 3000 to 4000 hours service and can be applied sufficiently to evaluate integrity of OGL - 1 high temperature pipings and others.

  8. Evaluation test on stability of high temperature strain gage

    International Nuclear Information System (INIS)

    Sato, Toshimi; Ito, Haruhiko; Tanaka, Isao; Komori, Yoshihiro.

    1983-01-01

    This report deals with the results on a stability test of high temperature strain gage which is utilized for development of the Stethoscope for OGL - 1 Components in Elevated Temperature Services (ab. SOCETS). The test has proved that the weldable strain gage (KHC - 20 - G5) exhibits excellent stability at 500 0 C during 3000 to 4000 hours service and can be applied sufficiently to evaluate integrity of OGL - 1 high temperature pipings and others. (author)

  9. Three dimensional strained semiconductors

    Science.gov (United States)

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  10. A new strain gage method for measuring the contractile strain ratio of Zircaloy tubing

    International Nuclear Information System (INIS)

    Hwang, S.K.; Sabol, G.P.

    1988-01-01

    An improved strain gage method for determining the contractile strain ratio (CSR) of Zircaloy tubing was developed. The new method consists of a number of load-unload cyclings at approximately 0.2% plastic strain interval. With this method the CSR of Zircaloy-4 tubing could be determined accurately because it was possible to separate the plastic strains from the elastic strain involvement. The CSR values determined by use of the new method were in good agreement with those calculated from conventional post-test manual measurements. The CSR of the tubing was found to decrease with the amount of deformation during testing because of uneven plastic flow in the gage section. A new technique of inscribing gage marks by use of a YAG laser is discussed. (orig.)

  11. Nickel--chromium strain gages for cryogenic stress analysis of superconducting structures in high magnetic fields

    International Nuclear Information System (INIS)

    Anon.

    1977-01-01

    Magnetoresistance measurements of strain gages were made. The magnitude and variation of the magnetoresistance of a large number of strain gages were measured for the following conditions: (1) dc magnetic fields up to 12 T, (2) three orthogonal field directions, (3) increasing and decreasing fields, (4) a wide range of strain levels, and (5) liquid helium temperature

  12. Nickel--chromium strain gages for cryogenic stress analysis of superconducting structures in high magnetic fields

    International Nuclear Information System (INIS)

    Freynik, H.S. Jr.; Roach, D.R.; Deis, D.W.; Hirzel, D.G.

    1977-01-01

    Evaluation and calibration measurements were performed on commercial nickel-chromium metal-foil strain gages in a high-magnetic-field (12 T), liquid-helium (4.2 K) environment. The purpose was to fully characterize strain gages for use at cryogenic temperatures in high magnetic fields. In this study, the magnetoresistance of a number of strain gages was measured in three orthogonal directions at mechanical strain levels to 8900 μm/m. As a result, a unique calibration curve was defined for magnetoresistance strain errors that is independent of strain level and field direction to 12 T at 4.2 K. A current strain-gage application is the measurement of superconductor mechanical properties. These gages will soon be used in the stress analysis of superconducting fusion magnets during cooldown from ambient temperatures and during operation at 4.2 K with magnetic fields to 12 T

  13. Methodology to measure strains at high temperatures using electrical strain gages with free filaments

    International Nuclear Information System (INIS)

    Atanazio Filho, Nelson N.; Gomes, Paulo T. Vida; Scaldaferri, Denis H.B.; Silva, Luiz L. da; Rabello, Emerson G.; Mansur, Tanius R.

    2013-01-01

    An experimental methodology used for strains measuring at high temperatures is show in this work. In order to do the measurements, it was used electric strain gages with loose filaments attached to a stainless steel 304 beam with specific cements. The beam has triangular shape and a constant thickness, so the strain is the same along its length. Unless the beam surface be carefully prepared, the strain gage attachment is not efficient. The showed results are for temperatures ranging from 20 deg C to 300 deg C, but the experimental methodology could be used to measure strains at a temperature up to 900 deg C. Analytical calculations based on solid mechanics were used to verify the strain gage electrical installation and the measured strains. At a first moment, beam deformations as a temperature function were plotted. After that, beam deformations with different weighs were plotted as a temperature function. The results shown allowed concluding that the experimental methodology is trustable to measure strains at temperatures up to 300 deg C. (author)

  14. Indium tin oxide thin film strain gages for use at elevated temperatures

    Science.gov (United States)

    Luo, Qing

    A robust ceramic thin film strain gage based on indium-tin-oxide (ITO) has been developed for static and dynamic strain measurements in advanced propulsion systems at temperatures up to 1400°C. These thin film sensors are ideally suited for in-situ strain measurement in harsh environments such as those encountered in the hot sections of gas turbine engines. A novel self-compensation scheme was developed using thin film platinum resistors placed in series with the active strain element (ITO) to minimize the thermal effect of strain or apparent strain. A mathematical model as well as design rules were developed for the self-compensated circuitry using this approach and close agreement between the model and actual static strain results has been achieved. High frequency dynamic strain tests were performed at temperatures up to 500°C and at frequencies up to 2000Hz to simulate conditions that would be encountered during engine vibration fatigue. The results indicated that the sensors could survive extreme test conditions while maintaining sensitivity. A reversible change in sign of the piezoresistive response from -G to +G was observed in the vicinity of 950°C, suggesting that the change carrier responsible for conduction in the ITO gage had been converted from a net "n-carrier" to a net "p-carrier" semiconductor. Electron spectroscopy for chemical analysis (ESCA) of the ITO films suggested they experienced an interfacial reaction with the Al2O3 substrate at 1400°C. It is likely that oxygen uptake from the substrate is responsible for stabilizing the ITO films to elevated temperatures through the interfacial reaction. Thermo gravimetric analysis of ITO films on alumina at elevated temperatures showed no sublimation of ITO films at temperature up to 1400°C. The surface morphology of ITO films heated to 800, 1200 and 1400°C were also evaluated by atomic force microscopy (AFM). A linear current-voltage (I--V) characteristic indicated that the contact interface

  15. Investigation of factors affecting the calibration of strain gage based transducers (''Goodzeit gages'') for SSC magnets

    International Nuclear Information System (INIS)

    Davidson, M.; Gilbertson, A.; Dougherty, M.

    1991-03-01

    These transducers are designed to measure stresses on SSC collared coils. They are individually calibrated with a bonded ten-stack of SSC inner coil cable by applying a known load and reading corresponding output from the gages. The transducer is supported by a notched ''backing plate'' that allows for bending of the gage beam during calibration or in use with an actual coil. Several factors affecting the calibration and use of the transducers are: the number of times a ''backing plate'' is used, the similarities or difficulties between bonded ten-stacks, and the differences between the ten-stacks and the coil they represent. The latter is probably the most important because a calibration curve is a model of how a transducer should react within a coil. If the model is wrong, the calibration curve is wrong. Information will be presented regarding differences in calibrations between Brookhaven National Labs (also calibrating these transducers) and Fermilab -- what caused these differences, the investigation into the differences between coils and ten-stacks and how they relate to transducer calibration, and some suggestions for future calibrations

  16. Utilizing Photogrammetry and Strain Gage Measurement to Characterize Pressurization of an Inflatable Module

    Science.gov (United States)

    Valle, Gerard D.; Selig, Molly; Litteken, Doug; Oliveras, Ovidio

    2012-01-01

    This paper documents the integration of a large hatch penetration into an inflatable module. This paper also documents the comparison of analytical load predictions with measured results utilizing strain measurement. Strain was measured by utilizing photogrammetric measurement and through measurement obtained from strain gages mounted to selected clevises that interface with the structural webbings. Bench testing showed good correlation between strain measurement obtained from an extensometer and photogrammetric measurement especially after the fabric has transitioned through the low load/high strain region of the curve. Test results for the full-scale torus showed mixed results in the lower load and thus lower strain regions. Overall strain, and thus load, measured by strain gages and photogrammetry tracked fairly well with analytical predictions. Methods and areas of improvements are discussed.

  17. Improved Regression Analysis of Temperature-Dependent Strain-Gage Balance Calibration Data

    Science.gov (United States)

    Ulbrich, N.

    2015-01-01

    An improved approach is discussed that may be used to directly include first and second order temperature effects in the load prediction algorithm of a wind tunnel strain-gage balance. The improved approach was designed for the Iterative Method that fits strain-gage outputs as a function of calibration loads and uses a load iteration scheme during the wind tunnel test to predict loads from measured gage outputs. The improved approach assumes that the strain-gage balance is at a constant uniform temperature when it is calibrated and used. First, the method introduces a new independent variable for the regression analysis of the balance calibration data. The new variable is designed as the difference between the uniform temperature of the balance and a global reference temperature. This reference temperature should be the primary calibration temperature of the balance so that, if needed, a tare load iteration can be performed. Then, two temperature{dependent terms are included in the regression models of the gage outputs. They are the temperature difference itself and the square of the temperature difference. Simulated temperature{dependent data obtained from Triumph Aerospace's 2013 calibration of NASA's ARC-30K five component semi{span balance is used to illustrate the application of the improved approach.

  18. Utilizing Photogrammetry and Strain Gage Measurement to Characterize Pressurization of Inflatable Modules

    Science.gov (United States)

    Mohammed, Anil

    2011-01-01

    This paper focuses on integrating a large hatch penetration into inflatable modules of various constructions. This paper also compares load predictions with test measurements. The strain was measured by utilizing photogrammetric methods and strain gages mounted to select clevises that interface with the structural webbings. Bench testing showed good correlation between strain data collected from an extensometer and photogrammetric measurements, even when the material transitioned from the low load to high load strain region of the curve. The full-scale torus design module showed mixed results as well in the lower load and high strain regions. After thorough analysis of photogrammetric measurements, strain gage measurements, and predicted load, the photogrammetric measurements seem to be off by a factor of two.

  19. Thermal expansion measurement of turbine and main steam piping by using strain gages in power plants

    International Nuclear Information System (INIS)

    Na, Sang Soo; Chung, Jae Won; Bong, Suk Kun; Jun, Dong Ki; Kim, Yun Suk

    2000-01-01

    One of the domestic co-generation plants have undergone excessive vibration problems of turbine attributed to external force for years. The root cause of turbine vibration may be shaft alignment problem which sometimes is changed by thermal expansion and external force, even if turbine technicians perfectly performed it. To evaluate the alignment condition from plant start-up to full load, a strain measurement of turbine and main steam piping subjected to thermal loading is monitored by using strain gages. The strain gages are bonded on both bearing housing adjusting bolts and pipe stoppers which installed in the x-direction of left-side main steam piping near the turbine inlet in order to monitor closely the effect of turbine under thermal deformation of turbine casing and main steam piping during plant full load. Also in situ load of constant support hangers in main steam piping system is measured by strain gages and its results are used to rebalance the hanger rod load. Consequently, the experimental stress analysis by using strain gages turns out to be very useful tool to diagnose the trouble and failures of not only to stationary components but to rotating machinery in power plants

  20. A Dual-Range Strain Gage Weighing Transducer Employing Automatic Switching

    Science.gov (United States)

    Rodger A. Arola

    1968-01-01

    Describes a dual-range strain gage transducer which has proven to be an excellent weight-sensing device for weighing trees and tree-length logs; discusses basic principals of the design and operation; and shows that a single transducer having two sensitivity ranges with automatic internal switching can sense weight with good repeatability and that one calibration curve...

  1. Suitability of Strain Gage Sensors for Integration into Smart Sport Equipment: A Golf Club Example.

    Science.gov (United States)

    Umek, Anton; Zhang, Yuan; Tomažič, Sašo; Kos, Anton

    2017-04-21

    Wearable devices and smart sport equipment are being increasingly used in amateur and professional sports. Smart sport equipment employs various sensors for detecting its state and actions. The correct choice of the most appropriate sensor(s) is of paramount importance for efficient and successful operation of sport equipment. When integrated into the sport equipment, ideal sensors are unobstructive, and do not change the functionality of the equipment. The article focuses on experiments for identification and selection of sensors that are suitable for the integration into a golf club with the final goal of their use in real time biofeedback applications. We tested two orthogonally affixed strain gage (SG) sensors, a 3-axis accelerometer, and a 3-axis gyroscope. The strain gage sensors are calibrated and validated in the laboratory environment by a highly accurate Qualisys Track Manager (QTM) optical tracking system. Field test results show that different types of golf swing and improper movement in early phases of golf swing can be detected with strain gage sensors attached to the shaft of the golf club. Thus they are suitable for biofeedback applications to help golfers to learn repetitive golf swings. It is suggested that the use of strain gage sensors can improve the golf swing technical error detection accuracy and that strain gage sensors alone are enough for basic golf swing analysis. Our final goal is to be able to acquire and analyze as many parameters of a smart golf club in real time during the entire duration of the swing. This would give us the ability to design mobile and cloud biofeedback applications with terminal or concurrent feedback that will enable us to speed-up motor skill learning in golf.

  2. Evaluation of metal-foil strain gages for cryogenic application in magnetic fields

    International Nuclear Information System (INIS)

    Freynik, H.S. Jr.; Roach, D.R.; Deis, D.W.; Hirzel, D.G.

    1977-01-01

    The requirement for the design and construction of large superconducting magnet systems for fusion research has raised a number of new questions regarding the properties of composite superconducting conductors. One of these, the effect of mechanical stress on the current-carrying capacity of Nb 3 Sn, is of major importance in determining the feasibility of constructing large magnets with this material. A typical experiment for determining such data involves the measurement of critical current versus magnetic field while the conductor is being mechanically strained to various degrees. Techniques are well developed for the current and field measurements, but much less so for the accurate measurement of strain at liquid-helium temperature in a high magnetic field. A study was made of commercial, metal-foil strain gages for use under these conditions. The information developed can also be applied to the use of strain gages as diagnostic tools in superconducting magnets

  3. Wireless Zigbee strain gage sensor system for structural health monitoring

    Science.gov (United States)

    Ide, Hiroshi; Abdi, Frank; Miraj, Rashid; Dang, Chau; Takahashi, Tatsuya; Sauer, Bruce

    2009-05-01

    A compact cell phone size radio frequency (ZigBee) wireless strain measurement sensor system to measure the structural strain deformation was developed. The developed system provides an accurate strain measurement data stream to the Internet for further Diagnostic and Prognostic (DPS) correlation. Existing methods of structural measurement by strain sensors (gauges) do not completely satisfy problems posed by continuous structural health monitoring. The need for efficient health monitoring methods with real-time requirements to bidirectional data flow from sensors and to a commanding device is becoming critical for keeping our daily life safety. The use of full-field strain measurement techniques could reduce costly experimental programs through better understanding of material behavior. Wireless sensor-network technology is a monitoring method that is estimated to grow rapidly providing potential for cost savings over traditional wired sensors. The many of currently available wireless monitoring methods have: the proactive and constant data rate character of the data streams rather than traditional reactive, event-driven data delivery; mostly static node placement on structures with limited number of nodes. Alpha STAR Electronics' wireless sensor network system, ASWN, addresses some of these deficiencies, making the system easier to operate. The ASWN strain measurement system utilizes off-the-shelf sensors, namely strain gauges, with an analog-to-digital converter/amplifier and ZigBee radio chips to keep cost lower. Strain data is captured by the sensor, converted to digital form and delivered to the ZigBee radio chip, which in turn broadcasts the information using wireless protocols to a Personal Data Assistant (PDA) or Laptop/Desktop computers. From here, data is forwarded to remote computers for higher-level analysis and feedback using traditional cellular and satellite communication or the Ethernet infrastructure. This system offers a compact size, lower cost

  4. Wind Tunnel Strain-Gage Balance Calibration Data Analysis Using a Weighted Least Squares Approach

    Science.gov (United States)

    Ulbrich, N.; Volden, T.

    2017-01-01

    A new approach is presented that uses a weighted least squares fit to analyze wind tunnel strain-gage balance calibration data. The weighted least squares fit is specifically designed to increase the influence of single-component loadings during the regression analysis. The weighted least squares fit also reduces the impact of calibration load schedule asymmetries on the predicted primary sensitivities of the balance gages. A weighting factor between zero and one is assigned to each calibration data point that depends on a simple count of its intentionally loaded load components or gages. The greater the number of a data point's intentionally loaded load components or gages is, the smaller its weighting factor becomes. The proposed approach is applicable to both the Iterative and Non-Iterative Methods that are used for the analysis of strain-gage balance calibration data in the aerospace testing community. The Iterative Method uses a reasonable estimate of the tare corrected load set as input for the determination of the weighting factors. The Non-Iterative Method, on the other hand, uses gage output differences relative to the natural zeros as input for the determination of the weighting factors. Machine calibration data of a six-component force balance is used to illustrate benefits of the proposed weighted least squares fit. In addition, a detailed derivation of the PRESS residuals associated with a weighted least squares fit is given in the appendices of the paper as this information could not be found in the literature. These PRESS residuals may be needed to evaluate the predictive capabilities of the final regression models that result from a weighted least squares fit of the balance calibration data.

  5. Evaluation test of high temperature strain gages used in a stethoscope for OGL-1 components in an elevated temperature service

    International Nuclear Information System (INIS)

    Sato, Toshimi; Tanaka, Isao; Komori, Yoshihiro; Suzuki; Toshiaki.

    1982-01-01

    The stethoscope for OGL-1 components in a elevated temperature service (SOCETS) is a measuring system of evaluation integrity of structures for high temperature pipings during operations of Japan Material Testing Reactor. This paper is described about the results on fundamental performance on high temperature strain gages. From their test results that have been based on correlation of temperature-timestrain factors, it became clear that two weldable strain gages and a capacitance strain gage were available for strain measurements of OGL-1 components. (author)

  6. Evaluation test of high temperature strain gages used in a stethoscope for OGL-1 components in an elevated temperature service

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Toshimi (Kyowa Electronic Inst. Co. Ltd. (Japan)); Tanaka, Isao; Komori, Yoshihiro; Suzuki; Toshiaki

    1982-08-01

    The stethoscope for OGL-1 components in a elevated temperature service (SOCETS) is a measuring system of evaluation integrity of structures for high temperature pipings during operations of Japan Material Testing Reactor. This paper is described about the results on fundamental performance on high temperature strain gages. From their test results that have been based on correlation of temperature-timestrain factors, it became clear that two weldable strain gages and a capacitance strain gage were available for strain measurements of OGL-1 components.

  7. Iterative Strain-Gage Balance Calibration Data Analysis for Extended Independent Variable Sets

    Science.gov (United States)

    Ulbrich, Norbert Manfred

    2011-01-01

    A new method was developed that makes it possible to use an extended set of independent calibration variables for an iterative analysis of wind tunnel strain gage balance calibration data. The new method permits the application of the iterative analysis method whenever the total number of balance loads and other independent calibration variables is greater than the total number of measured strain gage outputs. Iteration equations used by the iterative analysis method have the limitation that the number of independent and dependent variables must match. The new method circumvents this limitation. It simply adds a missing dependent variable to the original data set by using an additional independent variable also as an additional dependent variable. Then, the desired solution of the regression analysis problem can be obtained that fits each gage output as a function of both the original and additional independent calibration variables. The final regression coefficients can be converted to data reduction matrix coefficients because the missing dependent variables were added to the data set without changing the regression analysis result for each gage output. Therefore, the new method still supports the application of the two load iteration equation choices that the iterative method traditionally uses for the prediction of balance loads during a wind tunnel test. An example is discussed in the paper that illustrates the application of the new method to a realistic simulation of temperature dependent calibration data set of a six component balance.

  8. Design of membrane pressure indicators with strain gages

    International Nuclear Information System (INIS)

    Haberzettl, G.

    1979-01-01

    A special type of pressure indicators, more or less well known under the name of 'membrane pressure indicators' is dealt with. In principle, they consist of a pipe socket which is open at one end and sealed by the 'membrane' at the other end. In case of internal pressure from the open side, the membrane will begin to arch. This arch, which is proportional to the internal pressure, is measured by suitable methods. A special form of strain ganges, so-called 'membrane pressure roses' have turned out to be particularly suitable here. The article gives general guidelines for the construction of membrane pressure indicators. (orig./HT) [de

  9. Stress Measurement around a Circular Role in a Cantilever Beam under Bending Moment Using Strain Gage and Reflective Photoelasticity

    Energy Technology Data Exchange (ETDEWEB)

    Baek, Tae Hyun; Park, Tae Geun; Yang, Min Bok [Kunsan National University, Gunsan (Korea, Republic of)

    2006-10-15

    It is necessary to study on the stress concentration experimentally, which is the main reason to avoid mechanical dilapidation and failure, when designing a mechanical structure. Stress concentration factor of a specimen of cantilever beam with a circular hole in the center was measured using both strain gage and photoelastic methods in this paper. In strain-gage measurement, three strain gages along the line near a hole of the specimen were installed and maximum strain was extrapolated from three measurements. In photoelastic measurement, two methods were employed. First, the Babinet-Soleil compensation method was used to measure the maximum strain. Secondly, photoelastic 4-step phase shilling method was applied to observe the strain distribution around the hole. Measurements obtained by different experiments were comparable within the range of experimental error

  10. Stress Measurement around a Circular Role in a Cantilever Beam under Bending Moment Using Strain Gage and Reflective Photoelasticity

    International Nuclear Information System (INIS)

    Baek, Tae Hyun; Park, Tae Geun; Yang, Min Bok

    2006-01-01

    It is necessary to study on the stress concentration experimentally, which is the main reason to avoid mechanical dilapidation and failure, when designing a mechanical structure. Stress concentration factor of a specimen of cantilever beam with a circular hole in the center was measured using both strain gage and photoelastic methods in this paper. In strain-gage measurement, three strain gages along the line near a hole of the specimen were installed and maximum strain was extrapolated from three measurements. In photoelastic measurement, two methods were employed. First, the Babinet-Soleil compensation method was used to measure the maximum strain. Secondly, photoelastic 4-step phase shilling method was applied to observe the strain distribution around the hole. Measurements obtained by different experiments were comparable within the range of experimental error

  11. Strain-gage signal-conditioning system for use in the LCP

    International Nuclear Information System (INIS)

    Ellis, J.F.; Walstrom, P.L.

    1979-01-01

    A strain-gage signal-conditioning system, providing wide-band noise rejection and isolation from high voltages that occur during emergency coil discharges, has been developed and tested. The multichannel system combines double-shielded transformers, neutralizing networks, and bandpass filters (with commercial 3-kHz carrier amplifier modules to isolate the strain gages to 5000 V) eliminate thermoelectric effects, and provide a signal bandwidth of 200 Hz. Common-mode interference occurs primarily as a result of beat-note effects between the carrier and the superimposed noise at frequencies near the odd harmonics of the carrier. The common-mode rejection of the test circuit was measured to be 120 dB for noise at 2750 and 3250 Hz, 135 dB at 3 kHz, and 135 dB and better at the odd harmonics of 9 kHz and above. The system has been successfully used in strain measurements on the toroidal field coils of the ISX-B tokamak and will be used in the Large Coil Test Facility to monitor strains in the energized coil conductors

  12. Problems in use and security of measurement of high temperature strain gages at various temperature limits up to 10000C

    International Nuclear Information System (INIS)

    Ziegler, K.

    1982-01-01

    The examples given show the quality and use of manufacturers' data for a series of behaviour criteria for strain gages in the high temperature region. These results should not only be regarded critically. The manufacturer must appreciate that the very costly programme of investigations on the users' side represents a product development for large parts for the manufacturer of the strain gauges. It would therefore be desirable if these considerations were to initiate investigations on the manufacturer's part, in order to clear up the problematic are of the use of strain gages in the high temperature field, in order to provide the customer with more reliable and better strain gage characteristics for very expensive high temperature strain measurements. (orig.) [de

  13. Thermal expansion and magnetostriction measurements at cryogenic temperature using the strain gage method

    Science.gov (United States)

    Wang, Wei; Liu, Huiming; Huang, Rongjin; Zhao, Yuqiang; Huang, Chuangjun; Guo, Shibin; Shan, Yi; Li, Laifeng

    2018-03-01

    Thermal expansion and magnetostriction, the strain responses of a material to temperature and a magnetic field, especially properties at low temperature, are extremely useful to study electronic and phononic properties, phase transitions, quantum criticality, and other interesting phenomena in cryogenic engineering and materials science. However, traditional dilatometers cannot provide magnetic field and ultra low temperature (<77 K) environment easily. This paper describes the design and test results of thermal expansion and magnetostriction at cryogenic temperature using the strain gage method based on a Physical Properties Measurements System (PPMS). The interfacing software and automation were developed using LabVIEW. The sample temperature range can be tuned continuously between 1.8 K and 400 K. With this PPMS-aided measuring system, we can observe temperature and magnetic field dependence of the linear thermal expansion of different solid materials easily and accurately.

  14. Quantum dots as mineral- and matrix-specific strain gages for bone biomechanical studies

    Science.gov (United States)

    Zhu, Peizhi; Xu, Jiadi; Morris, Michael; Ramamoorthy, Ayyalusamy; Sahar, Nadder; Kohn, David

    2009-02-01

    We report the use of quantum dots (Qdots) as strain gages in the study of bone biomechanics using solid state nuclear magnetic resonance (NMR) spectroscopy. We have developed solid state NMR sample cells for investigation of deformations of bone tissue components at loads up to several Mega Pascal. The size constraints of the NMR instrumentation limit the bone specimen diameter and length to be no greater than 2-3 mm and 30 mm respectively. Further, magic angle spinning (MAS) solid state NMR experiments require the use of non-metallic apparatus that can be rotated at kilohertz rates. These experimental constraints preclude the use of standard biomechanical measurement systems. In this paper we explore the use of quantum dot center of gravity measurement as a strain gage technology consistent with the constraints of solid state NMR. We use Qdots that bind calcium (625 nm emission) and collagen (705 nm emission) for measurement of strain in these components. Compressive loads are applied to a specimen in a cell through a fine pitch screw turned with a mini-torque wrench. Displacement is measured as changes in the positions of arrays of quantum dots on the surface of a specimen. Arrays are created by spotting the specimen with dilute suspensions of Qdots. Mineral labeling is achieved with 705 nm carboxylated dots and matrix labeling with 565 nm quantum dots conjugated to collagen I antibodies. After each load increment the new positions of the quantum dots are measured by fluorescence microscopy. Changes in Qdot center of gravity as a function of applied load can be measured with submicron accuracy.

  15. Review of Trackside Monitoring Solutions: From Strain Gages to Optical Fibre Sensors

    Directory of Open Access Journals (Sweden)

    Georges Kouroussis

    2015-08-01

    Full Text Available A review of recent research on structural monitoring in railway industry is proposed in this paper, with a special focus on stress-based solutions. After a brief analysis of the mechanical behaviour of ballasted railway tracks, an overview of the most common monitoring techniques is presented. A special attention is paid on strain gages and accelerometers for which the accurate mounting position on the track is requisite. These types of solution are then compared to another modern approach based on the use of optical fibres. Besides, an in-depth discussion is made on the evolution of numerical models that investigate the interaction between railway vehicles and tracks. These models are used to validate experimental devices and to predict the best location(s of the sensors. It is hoped that this review article will stimulate further research activities in this continuously expanding field.

  16. Flexible Riser Monitoring Using Hybrid Magnetic/Optical Strain Gage Techniques through RLS Adaptive Filtering

    Directory of Open Access Journals (Sweden)

    Daniel Pipa

    2010-01-01

    Full Text Available Flexible riser is a class of flexible pipes which is used to connect subsea pipelines to floating offshore installations, such as FPSOs (floating production/storage/off-loading unit and SS (semisubmersible platforms, in oil and gas production. Flexible risers are multilayered pipes typically comprising an inner flexible metal carcass surrounded by polymer layers and spiral wound steel ligaments, also referred to as armor wires. Since these armor wires are made of steel, their magnetic properties are sensitive to the stress they are subjected to. By measuring their magnetic properties in a nonintrusive manner, it is possible to compare the stress in the armor wires, thus allowing the identification of damaged ones. However, one encounters several sources of noise when measuring electromagnetic properties contactlessly, such as movement between specimen and probe, and magnetic noise. This paper describes the development of a new technique for automatic monitoring of armor layers of flexible risers. The proposed approach aims to minimize these current uncertainties by combining electromagnetic measurements with optical strain gage data through a recursive least squares (RLSs adaptive filter.

  17. Dynamic testing of POSI-SEAL motor-operated butterfly valves using strain gages

    International Nuclear Information System (INIS)

    Richard, M.C.; Chiou, D.

    1994-01-01

    Utilities operating nuclear power plants recognize that the correct functioning of all motor-operated valves, and particularly those in safety-related systems, is of paramount importance. The U.S. Nuclear Regulatory Commission has issued Generic Letter 89-10 relative to this concern. Operability must be demonstrated under design-basis conditions. In order to demonstrate operability of motor-operated butterfly valves, the valve stem torque must be determined. The valve stem torque is a function of seat material, stem packing, stem bearing friction, and hydrodynamic lift and drag. The total valve operating hydrodynamic torque can be predicted using the valve manufacturer's data and the differential pressure. In order to validate the valve manufacturer's data, the actual total valve hydrodynamic torque is measured using strain gages mounted directly on the valve stem. This paper presents the results of comparing the predicted total valve operating hydrodynamic torque with the actual total valve operating hydrodynamic torque for six POSI-SEAL Class 150 high performance butterfly valves

  18. Strain sensitivity of band gaps of Sn-containing semiconductors

    DEFF Research Database (Denmark)

    Li, Hong; Castelli, Ivano Eligio; Thygesen, Kristian Sommer

    2015-01-01

    Tuning of band gaps of semiconductors is a way to optimize materials for applications within photovoltaics or as photocatalysts. One way to achieve this is through applying strain to the materials. We investigate the effect of strain on a range of Sn-containing semiconductors using density...

  19. Strain Gage Load Calibration of the Wing Interface Fittings for the Adaptive Compliant Trailing Edge Flap Flight Test

    Science.gov (United States)

    Miller, Eric J.; Holguin, Andrew C.; Cruz, Josue; Lokos, William A.

    2014-01-01

    This is the presentation to follow conference paper of the same name. The adaptive compliant trailing edge (ACTE) flap experiment safety of flight requires that the flap to wing interface loads be sensed and monitored in real time to ensure that the wing structural load limits are not exceeded. This paper discusses the strain gage load calibration testing and load equation derivation methodology for the ACTE interface fittings. Both the left and right wing flap interfaces will be monitored and each contains four uniquely designed and instrumented flap interface fittings. The interface hardware design and instrumentation layout are discussed. Twenty one applied test load cases were developed using the predicted in-flight loads for the ACTE experiment.

  20. Standard test methods for performance characteristics of metallic bonded resistance strain gages

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    1992-01-01

    1.1 The purpose of this standard is to provide uniform test methods for the determination of strain gauge performance characteristics. Suggested testing equipment designs are included. 1.2 Test Methods E 251 describes methods and procedures for determining five strain gauge parameters: Section Part I—General Requirements 7 Part II—Resistance at a Reference Temperature 8 Part III—Gauge Factor at a Reference Temperature 9 Part IV—Temperature Coefficient of Gauge Factor\t10 Part V—Transverse Sensitivity\t11 Part VI—Thermal Output\t12 1.3 Strain gauges are very sensitive devices with essentially infinite resolution. Their response to strain, however, is low and great care must be exercised in their use. The performance characteristics identified by these test methods must be known to an acceptable accuracy to obtain meaningful results in field applications. 1.3.1 Strain gauge resistance is used to balance instrumentation circuits and to provide a reference value for measurements since all data are...

  1. Suppressing molecular vibrations in organic semiconductors by inducing strain.

    Science.gov (United States)

    Kubo, Takayoshi; Häusermann, Roger; Tsurumi, Junto; Soeda, Junshi; Okada, Yugo; Yamashita, Yu; Akamatsu, Norihisa; Shishido, Atsushi; Mitsui, Chikahiko; Okamoto, Toshihiro; Yanagisawa, Susumu; Matsui, Hiroyuki; Takeya, Jun

    2016-04-04

    Organic molecular semiconductors are solution processable, enabling the growth of large-area single-crystal semiconductors. Improving the performance of organic semiconductor devices by increasing the charge mobility is an ongoing quest, which calls for novel molecular and material design, and improved processing conditions. Here we show a method to increase the charge mobility in organic single-crystal field-effect transistors, by taking advantage of the inherent softness of organic semiconductors. We compress the crystal lattice uniaxially by bending the flexible devices, leading to an improved charge transport. The mobility increases from 9.7 to 16.5 cm(2) V(-1) s(-1) by 70% under 3% strain. In-depth analysis indicates that compressing the crystal structure directly restricts the vibration of the molecules, thus suppresses dynamic disorder, a unique mechanism in organic semiconductors. Since strain can be easily induced during the fabrication process, we expect our method to be exploited to build high-performance organic devices.

  2. Inexpensive Bolt-Load Gage

    Science.gov (United States)

    Long, M. J.

    1983-01-01

    "Built-in" gage determines whether large bolt or stud has been torqued to desired load and provides for continuous inspection to ensure proper load is being maintained. Gage detects longitudinal stress/strain bolt; requires no electronic or sonic test equipment.

  3. Design and construction of a strain gage compression load cell to measure rolling forces

    International Nuclear Information System (INIS)

    Schoeffer, L.; Borchardt, I.G.; Carvalho, L.F.A.

    1978-05-01

    A complete detailed mechanical desion of a strain gauge compression load cell is presented. This cell was specialy designed to measure rolling forces at conventional duo or trio industrial roughing stands. The stands, in general, have little space (height) to adjust to the cells. Moreover the contact stands surfaces are very rough. Do to this facts, load cells of elastic cilindrical geometries are not recommended for accuracies better than 8%. This work describes the complete design and the construction of a circular (membrane) steel plate load cell. A prototype of 300 KN (approximately 30t) capacity, with 2% accuracies and with a height of 6 cm was constructed and tested. The design proposed is a general one and permits the construction of small load cells to measure any compression load [pt

  4. Strain effects on the work function of an organic semiconductor

    KAUST Repository

    Wu, Yanfei

    2016-02-01

    Establishing fundamental relationships between strain and work function (WF) in organic semiconductors is important not only for understanding electrical properties of organic thin films, which are subject to both intrinsic and extrinsic strains, but also for developing flexible electronic devices. Here we investigate tensile and compressive strain effects on the WF of rubrene single crystals. Mechanical strain induced by thermal expansion mismatch between the substrate and rubrene is quantified by X-ray diffraction. The corresponding WF change is measured by scanning Kelvin probe microscopy. The WF of rubrene increases (decreases) significantly with in-plane tensile (compressive) strain, which agrees qualitatively with density functional theory calculations. An elastic-to-plastic transition, characterized by a steep rise of the WF, occurs at ~0.05% tensile strain along the rubrene π-stacking direction. The results provide the first concrete link between mechanical strain and WF of an organic semiconductor and have important implications for understanding the connection between structural and electronic disorder in soft organic electronic materials.

  5. Strain effects on the work function of an organic semiconductor

    Science.gov (United States)

    Wu, Yanfei; Chew, Annabel R.; Rojas, Geoffrey A.; Sini, Gjergji; Haugstad, Greg; Belianinov, Alex; Kalinin, Sergei V.; Li, Hong; Risko, Chad; Brédas, Jean-Luc; Salleo, Alberto; Frisbie, C. Daniel

    2016-01-01

    Establishing fundamental relationships between strain and work function (WF) in organic semiconductors is important not only for understanding electrical properties of organic thin films, which are subject to both intrinsic and extrinsic strains, but also for developing flexible electronic devices. Here we investigate tensile and compressive strain effects on the WF of rubrene single crystals. Mechanical strain induced by thermal expansion mismatch between the substrate and rubrene is quantified by X-ray diffraction. The corresponding WF change is measured by scanning Kelvin probe microscopy. The WF of rubrene increases (decreases) significantly with in-plane tensile (compressive) strain, which agrees qualitatively with density functional theory calculations. An elastic-to-plastic transition, characterized by a steep rise of the WF, occurs at ∼0.05% tensile strain along the rubrene π-stacking direction. The results provide the first concrete link between mechanical strain and WF of an organic semiconductor and have important implications for understanding the connection between structural and electronic disorder in soft organic electronic materials. PMID:26831362

  6. Characterization of strained semiconductor structures using transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Oezdoel, Vasfi Burak

    2011-08-15

    Today's state-of-the-art semiconductor electronic devices utilize the charge transport within very small volumes of the active device regions. The structural, chemical and optical material properties in these small dimensions can critically affect the performance of these devices. The present thesis is focused on the nanometer scale characterization of the strain state in semiconductor structures using transmission electron microscopy (TEM). Although high-resolution TEM has shown to provide the required accuracy at the nanometer scale, optimization of imaging conditions is necessary for accurate strain measurements. An alternative HRTEM method based on strain mapping on complex-valued exit face wave functions is developed to reduce the artifacts arising from objective lens aberrations. However, a much larger field of view is crucial for mapping strain in the active regions of complex structures like latest generation metal-oxide-semiconductor field-effect transistors (MOSFETs). To overcome this, a complementary approach based on electron holography is proposed. The technique relies on the reconstruction of the phase shifts in the diffracted electron beams from a focal series of dark-field images using recently developed exit-face wave function reconstruction algorithm. Combining high spatial resolution, better than 1 nm, with a field of view of about 1 {mu}m in each dimension, simultaneous strain measurements on the array of MOSFETs are possible. Owing to the much lower electron doses used in holography experiments when compared to conventional quantitative methods, the proposed approach allows to map compositional distribution in electron beam sensitive materials such as InGaN heterostructures without alteration of the original morphology and chemical composition. Moreover, dark-field holography experiments can be performed on thicker specimens than the ones required for high-resolution TEM, which in turn reduces the thin foil relaxation. (orig.)

  7. Control of hole localization in magnetic semiconductors by axial strain

    Science.gov (United States)

    Raebiger, Hannes; Bae, Soungmin; Echeverría-Arrondo, Carlos; Ayuela, Andrés

    2018-02-01

    Mn and Fe-doped GaN are widely studied prototype systems for hole-mediated magnetic semiconductors. The nature of the hole states around the Mn and Fe impurities, however, remains under debate. Our self-interaction corrected density-functional calculations show that the charge neutral Mn 0 and positively charged Fe+ impurities have symmetry-broken d5+h ground states, in which the hole is trapped by one of the surrounding N atoms in a small polaron state. We further show that both systems also have a variety of other d5+h configurations, including symmetric, delocalized states, which may be stabilized by axial strain. This finding opens a pathway to promote long-range hole-mediated magnetic interactions by strain engineering and clarifies why highly strained thin-films samples often exhibit anomalous magnetic properties.

  8. Analysis of residual transverse stresses in a thick UD glass/polyester pultruded profile using hole drilling with strain gage and digital image correlation

    Science.gov (United States)

    Yuksel, Onur; Baran, Ismet; Ersoy, Nuri; Akkerman, Remko

    2018-05-01

    Process induced stresses inherently exist in fiber reinforced polymer composites particularly in thick parts due to the presence of non-uniform cure, shrinkage and thermal expansion/contraction during manufacturing. In order to increase the reliability and the performance of the composite materials, process models are developed to predict the residual stress formation. The accuracy of the process models is dependent on the geometrical (micro to macro), material and process parameters as well as the numerical implementation. Therefore, in order to have reliable process modelling framework, there is a need for validation and if necessary calibration of the developed models. This study focuses on measurement of the transverse residual stresses in a relatively thick pultruded profile (20×20 mm) made of glass/polyester. Process-induced residual stresses in the middle of the profile are examined with different techniques which have never been applied for transverse residual stresses in thick unidirectional composites. Hole drilling method with strain gage and digital image correlation are employed. Strain values measured from measurements are used in a finite element model (FEM) to simulate the hole drilling process and predict the residual stress level. The measured released strain is found to be approximately 180 μm/m from the strain gage. The tensile residual stress at the core of the profile is estimated approximately as 7-10 MPa. Proposed methods and measured values in this study will enable validation and calibration of the process models based on the residual stresses.

  9. Bond-Length Distortions in Strained Semiconductor Alloys

    International Nuclear Information System (INIS)

    Woicik, J.C.; Pellegrino, J.G.; Steiner, B.; Miyano, K.E.; Bompadre, S.G.; Sorensen, L.B.; Lee, T.; Khalid, S.

    1997-01-01

    Extended x-ray absorption fine structure measurements performed at In-K edge have resolved the outstanding issue of bond-length strain in semiconductor-alloy heterostructures. We determine the In-As bond length to be 2.581±0.004 Angstrom in a buried, 213 Angstrom thick Ga 0.78 In 0.22 As layer grown coherently on GaAs(001). This bond length corresponds to a strain-induced contraction of 0.015±0.004 Angstrom relative to the In-As bond length in bulk Ga 1-x In x As of the same composition; it is consistent with a simple model which assumes a uniform bond-length distortion in the epilayer despite the inequivalent In-As and Ga-As bond lengths. copyright 1997 The American Physical Society

  10. Streamflow Gaging Stations

    Data.gov (United States)

    Department of Homeland Security — This map layer shows selected streamflow gaging stations of the United States, Puerto Rico, and the U.S. Virgin Islands, in 2013. Gaging stations, or gages, measure...

  11. Piezoelectric strained layer semiconductor lasers and integrated modulators

    International Nuclear Information System (INIS)

    Fleischmann, Thomas

    2002-01-01

    The properties, benefits and limitations of strained InGaAs/GaAs quantum well lasers and modulators grown on (111)B GaAs have been studied. Particular interest in this material system arose from the predicted increase in critical layer thickness, which would facilitate semiconductor lasers emitting beyond 1 μm. However, the recent discovery of a new type of misfit dislocation indicates that the critical layer thickness in this system is closer to that of (001) orientated structures. Photoluminescence and transmission electron microscopy presented in this study support this predicted reduction of the critical layer thickness and the resulting limitations on the emission wavelength. The absence of 3D growth in this system may however be advantageous when high reproducibility and reliable lasing operation beyond 1 μm are required. The piezoelectric field originating from strained growth on substrate orientations other than (001) was studied and its influence on transition energies and absorptive behaviour were investigated. The piezoelectric constant was found to show significant temperature dependence and, as also indicated in earlier studies, its value is smaller then the linearly interpolated value. When the effects of indium segregation on the transition energies is considered, the reduction is significantly smaller. Good agreement between theory and experiment was obtained using 86% of the value linearly interpolated between the binaries at room temperature and 82% at low temperature. Broad area lasers were fabricated emitting at lasing wavelengths of up to 1.08 μm with threshold current densities as low as 80 A/cm 2 at room temperature under continuous wave operation. Increasing the indium composition and strain within the limit of strain relaxation was demonstrated to improve device performance significantly. Furthermore, ridge waveguide lasers were fabricated exhibiting monomode emission at wavelengths up to 1.07 μm with a threshold current of 19 mA at

  12. Versatile radiation gaging system

    International Nuclear Information System (INIS)

    Long, P.J.

    1978-01-01

    The attributes of computerized versatile radiation gaging systems are described. The gages are used to measure plating thicknesses and material characteristics that can be determined from radiation attenuation and/or x-ray fluorescence measurements

  13. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  14. Formation of strain-induced quantum dots in gated semiconductor nanostructures

    Directory of Open Access Journals (Sweden)

    Ted Thorbeck

    2015-08-01

    Full Text Available A long-standing mystery in the field of semiconductor quantum dots (QDs is: Why are there so many unintentional dots (also known as disorder dots which are neither expected nor controllable. It is typically assumed that these unintentional dots are due to charged defects, however the frequency and predictability of the location of the unintentional QDs suggests there might be additional mechanisms causing the unintentional QDs besides charged defects. We show that the typical strains in a semiconductor nanostructure from metal gates are large enough to create strain-induced quantum dots. We simulate a commonly used QD device architecture, metal gates on bulk silicon, and show the formation of strain-induced QDs. The strain-induced QD can be eliminated by replacing the metal gates with poly-silicon gates. Thus strain can be as important as electrostatics to QD device operation operation.

  15. Critical strain region evaluation of self-assembled semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Sales, D L [Departamento de Ciencia de los Materiales e I. M. y Q. I., Universidad de Cadiz, Puerto Real, Cadiz (Spain); Pizarro, J [Departamento de Lenguajes y Sistemas Informaticos, Universidad de Cadiz, Puerto Real, Cadiz (Spain); Galindo, P L [Departamento de Lenguajes y Sistemas Informaticos, Universidad de Cadiz, Puerto Real, Cadiz (Spain); Garcia, R [Departamento de Ciencia de los Materiales e I. M. y Q. I., Universidad de Cadiz, Puerto Real, Cadiz (Spain); Trevisi, G [CNR-IMEM Institute, Parco delle Scienze 37a, 43100, Parma (Italy); Frigeri, P [CNR-IMEM Institute, Parco delle Scienze 37a, 43100, Parma (Italy); Nasi, L [CNR-IMEM Institute, Parco delle Scienze 37a, 43100, Parma (Italy); Franchi, S [CNR-IMEM Institute, Parco delle Scienze 37a, 43100, Parma (Italy); Molina, S I [Departamento de Ciencia de los Materiales e I. M. y Q. I., Universidad de Cadiz, Puerto Real, Cadiz (Spain)

    2007-11-28

    A novel peak finding method to map the strain from high resolution transmission electron micrographs, known as the Peak Pairs method, has been applied to In(Ga)As/AlGaAs quantum dot (QD) samples, which present stacking faults emerging from the QD edges. Moreover, strain distribution has been simulated by the finite element method applying the elastic theory on a 3D QD model. The agreement existing between determined and simulated strain values reveals that these techniques are consistent enough to qualitatively characterize the strain distribution of nanostructured materials. The correct application of both methods allows the localization of critical strain zones in semiconductor QDs, predicting the nucleation of defects, and being a very useful tool for the design of semiconductor devices.

  16. Strain effects on the work function of an organic semiconductor

    KAUST Repository

    Wu, Yanfei; Chew, Annabel R.; Rojas, Geoffrey A.; Sini, Gjergji; Haugstad, Greg; Belianinov, Alex; Kalinin, Sergei V.; Li, Hong; Risko, Chad; Bredas, Jean-Luc; Salleo, Alberto; Frisbie, C. Daniel

    2016-01-01

    by X-ray diffraction. The corresponding WF change is measured by scanning Kelvin probe microscopy. The WF of rubrene increases (decreases) significantly with in-plane tensile (compressive) strain, which agrees qualitatively with density functional

  17. Influence of strain on band structure of semiconductor nanostructures

    Directory of Open Access Journals (Sweden)

    Raičević Nevena

    2009-01-01

    Full Text Available The influence of the mechanical strain on the electronic structure of the asymmetric (In,GaAs/GaAs quantum well is considered. Both the direct influence of strain on the orbital part of the electronic structure and an indirect influence through the strain dependent Rashba and Dresselhaus Hamiltonians are taken into account. The analyzed quantum well is taken to have a triangular shape, and is oriented along the direction. For this direction, there exists both the intrinsic and strain-induced spin-orbit interaction. For all analyzed types of spin-orbit interaction, subband splittings depend linearly on the in-plane wave vector. On the other hand, the electronic structure for the Rashba type of the strain-induced spin-orbit interaction shows isotropic dependence in the k-space, while the electronic structure due to the Dresselhaus type shows anisotropy. Furthermore, the Rashba strain-induced spin-orbit interaction increases subband splitting, while the effect of the Dresselhaus Hamiltonian on the electronic structure is opposite to the intrinsic spin-orbit interaction for certain polar angles.

  18. Accelerometer and strain gage evaluation

    International Nuclear Information System (INIS)

    Ammerman, D.J.; Madsen, M.M.; Uncapher, W.L.; Stenberg, D.R.; Bronowski, D.R.

    1991-01-01

    This document describes the method developed by Sandia National Laboratories (SNL) to evaluate transducer used in the design certification testing of nuclear material shipping packages. This testing project was performed by SNL for the Office of Civilian Radioactive Waste Management (OCRWM). This evaluation is based on the results of tests conducted to measure ruggedness, failure frequency, repeatability, and manufacturers' calibration data under both field and laboratory conditions. The results of these tests are provided and discussed. The transducer were selected for testing by surveying cask contractors and testing facilities. Important insights relating to operational characteristics of accelerometer types were gained during field testing. 11 refs., 105 figs., 16 tabs

  19. Highly Sensitive and Very Stretchable Strain Sensor Based on a Rubbery Semiconductor.

    Science.gov (United States)

    Kim, Hae-Jin; Thukral, Anish; Yu, Cunjiang

    2018-02-07

    There is a growing interest in developing stretchable strain sensors to quantify the large mechanical deformation and strain associated with the activities for a wide range of species, such as humans, machines, and robots. Here, we report a novel stretchable strain sensor entirely in a rubber format by using a solution-processed rubbery semiconductor as the sensing material to achieve high sensitivity, large mechanical strain tolerance, and hysteresis-less and highly linear responses. Specifically, the rubbery semiconductor exploits π-π stacked poly(3-hexylthiophene-2,5-diyl) nanofibrils (P3HT-NFs) percolated in silicone elastomer of poly(dimethylsiloxane) to yield semiconducting nanocomposite with a large mechanical stretchability, although P3HT is a well-known nonstretchable semiconductor. The fabricated strain sensors exhibit reliable and reversible sensing capability, high gauge factor (gauge factor = 32), high linearity (R 2 > 0.996), and low hysteresis (degree of hysteresis wearable smart gloves. Systematic investigations in the materials design and synthesis, sensor fabrication and characterization, and mechanical analysis reveal the key fundamental and application aspects of the highly sensitive and very stretchable strain sensors entirely from rubbers.

  20. Möbius semiconductor nanostructures and deformation potential strain effects

    DEFF Research Database (Denmark)

    Lassen, Benny; Willatzen, Morten; Gravesen, Jens

    2011-01-01

    A discussion of Möbius nanostructures is presented with focus on (1) the accuracy of the approximate differential-geometry formalism by Gravesen and Willatzen and (2) to assess the influence of bending-induced strain on Schrödinger equation eigenstates in semiconductor Möbius structures....... The differential-geometry model assumed complete confinement of a quantum-mechanical particle to a zero-thickness Möbius structure where the shape was computed based on minimization of elastic bending energy only and imposing the relevant boundary conditions. In the latter work, while bending was accounted...... for in finding the shape of the Möbius structure it was, for simplicity, neglected altogether in determining the direct strain influence on electronic eigenstates. However, as is well-known, deformation-potential strain effects In many semiconductor materials can lead to important changes in not only the energy...

  1. Strain-tuning of the optical properties of semiconductor nanomaterials by integration onto piezoelectric actuators

    Science.gov (United States)

    Martín-Sánchez, Javier; Trotta, Rinaldo; Mariscal, Antonio; Serna, Rosalía; Piredda, Giovanni; Stroj, Sandra; Edlinger, Johannes; Schimpf, Christian; Aberl, Johannes; Lettner, Thomas; Wildmann, Johannes; Huang, Huiying; Yuan, Xueyong; Ziss, Dorian; Stangl, Julian; Rastelli, Armando

    2018-01-01

    The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to the realization of advanced multi-functional devices. A prominent approach consists in the integration of active nanomaterials, in thin epitaxial films or embedded within carrier nanomembranes, onto Pb(Mg1/3Nb2/3)O3-PbTiO3-based piezoelectric actuators, which convert electrical signals into mechanical deformation (strain). In this review, we mainly focus on recent advances in strain-tunable properties of self-assembled InAs quantum dots (QDs) embedded in semiconductor nanomembranes and photonic structures. Additionally, recent works on other nanomaterials like rare-earth and metal-ion doped thin films, graphene and MoS2 or WSe2 semiconductor two-dimensional materials are also reviewed. For the sake of completeness, a comprehensive comparison between different procedures employed throughout the literature to fabricate such hybrid piezoelectric-semiconductor devices is presented. It is shown that unprocessed piezoelectric substrates (monolithic actuators) allow to obtain a certain degree of control over the nanomaterials’ emission properties such as their emission energy, fine-structure-splitting in self-assembled InAs QDs and semiconductor 2D materials, upconversion phenomena in BaTiO3 thin films or piezotronic effects in ZnS:Mn films and InAs QDs. Very recently, a novel class of micro-machined piezoelectric actuators have been demonstrated for a full control of in-plane stress fields in nanomembranes, which enables producing energy-tunable sources of polarization-entangled photons in arbitrary QDs. Future research directions and prospects are discussed.

  2. Structure of highly perfect semiconductor strained-layer superlattices

    International Nuclear Information System (INIS)

    Vandenberg, J.M.

    1989-01-01

    High-resolution x-ray diffraction (HRXRD) measurements of strained-layer superlattices (SLS's) have been carried out using a four-crystal monochromator. A wide asymmetric range of sharp higher-order x-ray satellite peaks is observed indicating well-defined periodic structures. Using a kinematical diffraction step model very good agreement between measured and simulated x-ray satellite patterns could be achieved. These results show that this x- ray method is a powerful tool to evaluate the crystal quality of SLS's

  3. Strain Imaging of Nanoscale Semiconductor Heterostructures with X-Ray Bragg Projection Ptychography

    Science.gov (United States)

    Holt, Martin V.; Hruszkewycz, Stephan O.; Murray, Conal E.; Holt, Judson R.; Paskiewicz, Deborah M.; Fuoss, Paul H.

    2014-04-01

    We report the imaging of nanoscale distributions of lattice strain and rotation in complementary components of lithographically engineered epitaxial thin film semiconductor heterostructures using synchrotron x-ray Bragg projection ptychography (BPP). We introduce a new analysis method that enables lattice rotation and out-of-plane strain to be determined independently from a single BPP phase reconstruction, and we apply it to two laterally adjacent, multiaxially stressed materials in a prototype channel device. These results quantitatively agree with mechanical modeling and demonstrate the ability of BPP to map out-of-plane lattice dilatation, a parameter critical to the performance of electronic materials.

  4. Interface Schottky barrier engineering via strain in metal-semiconductor composites

    Science.gov (United States)

    Ma, Xiangchao; Dai, Ying; Yu, Lin; Huang, Baibiao

    2016-01-01

    The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation demonstrates that strain can be an effective way to decrease the interface SBH and that the n-type SBH can be more effectively decreased than the p-type SBH. Astonishingly, strain affects the interface SBH mainly by changing the intrinsic properties of Au and TiO2, whereas the interfacial potential alignment is almost independent of strain due to two opposite effects, which are induced by strain at the interfacial region. These observed trends can be understood on the basis of the general free-electron gas model of typical metals, the tight-binding theory and the crystal-field theory, which suggest that similar trends may be generalized for many other metal-semiconductor heterostructures. Given the commonness and tunability of strain in typical heterostructures, we anticipate that the tunability of the interface SBH with strain described here can provide an alternative effective way for realizing more efficient applications of relevant heterostructures.The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation

  5. SAF line pellet gaging

    International Nuclear Information System (INIS)

    Jedlovec, D.R.; Bowen, W.W.; Brown, R.L.

    1983-10-01

    Automated and remotely controlled pellet inspection operations will be utilized in the Secure Automated Fabrication (SAF) line. A prototypic pellet gage was designed and tested to verify conformance to the functions and requirements for measurement of diameter, surface flaws and weight-per-unit length

  6. Analysis of optical properties of strained semiconductor quantum dots for electromagnetically induced transparency

    DEFF Research Database (Denmark)

    Barettin, D.; Houmark-Nielsen, Jakob; Lassen, B.

    2010-01-01

    different k*p band structure models. In addition to the separation of the heavy and light holes due to the biaxial strain component, we observe a general reduction in the transition strengths due to energy crossings in the valence bands caused by strain and band mixing effects. We furthermore find a non......Using multiband k*p theory we study the size and geometry dependence on the slow light properties of conical semiconductor quantum dots. We find the V-type scheme for electromagnetically induced transparency (EIT) to be most favorable, and identify an optimal height and size for efficient EIT...... operation. In case of the ladder scheme, the existence of additional dipole allowed intraband transitions along with an almost equidistant energy level spacing adds additional decay pathways, which significantly impairs the EIT effect. We further study the influence of strain and band mixing comparing four...

  7. Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material

    Science.gov (United States)

    McKee, Rodney Allen; Walker, Frederick Joseph

    2000-01-01

    A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells. The predisposed orientation of the unit cell geometries are influenced by either a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface.

  8. Nucleation and strain-stabilization during organic semiconductor thin film deposition.

    Science.gov (United States)

    Li, Yang; Wan, Jing; Smilgies, Detlef-M; Bouffard, Nicole; Sun, Richard; Headrick, Randall L

    2016-09-07

    The nucleation mechanisms during solution deposition of organic semiconductor thin films determine the grain morphology and may influence the crystalline packing in some cases. Here, in-situ optical spectromicroscopy in reflection mode is used to study the growth mechanisms and thermal stability of 6,13-bis(trisopropylsilylethynyl)-pentacene thin films. The results show that the films form in a supersaturated state before transforming to a solid film. Molecular aggregates corresponding to subcritical nuclei in the crystallization process are inferred from optical spectroscopy measurements of the supersaturated region. Strain-free solid films exhibit a temperature-dependent blue shift of optical absorption peaks due to a continuous thermally driven change of the crystalline packing. As crystalline films are cooled to ambient temperature they become strained although cracking of thicker films is observed, which allows the strain to partially relax. Below a critical thickness, cracking is not observed and grazing incidence X-ray diffraction measurements confirm that the thinnest films are constrained to the lattice constants corresponding to the temperature at which they were deposited. Optical spectroscopy results show that the transition temperature between Form I (room temperature phase) and Form II (high temperature phase) depends on the film thickness, and that Form I can also be strain-stabilized up to 135 °C.

  9. Strain mapping for the semiconductor industry by dark-field electron holography and nanobeam electron diffraction with nm resolution

    International Nuclear Information System (INIS)

    Cooper, David; Hartmann, Jean Michel; Carron, Veronique; Béché, Armand; Rouvière, Jean-Luc

    2010-01-01

    There is a requirement of the semiconductor industry to measure strain in semiconductor devices with nm-scale resolution. Here we show that dark-field electron holography and nanobeam electron diffraction (NBED) are both complementary techniques that can be used to determine the strain in these devices. We show two-dimensional strain maps acquired by dark holography and line profiles that have been acquired by NBED of recessed SiGe sources and drains with a variety of different gate lengths and Ge concentrations. We have also used dark-field electron holography to measure the evolution in strain during the silicidation process, showing that this can reduce the applied uniaxial compressive strain in the conduction channel by up to a factor of 3

  10. Optimisation of 1.3 μm strained-layer semiconductor lasers

    International Nuclear Information System (INIS)

    Pacey, C.

    1999-03-01

    The objectives of the research undertaken have been to investigate the properties of semiconductor lasers operating at around 1.3 μm. The aim of the investigation is to suggest modifications which give rise to improved operating characteristics especially in the high temperature (approaching 85 deg. C) range. The investigation can be divided into 2 sections: a theoretical approach and an experimental section. The theoretical study examined the performance of compressively strained InGaAsP/InP multiple quantum-well lasers emitting at 1.3 μm. in order to investigate the important factors and trends in the threshold current density and differential gain with strain, well width and well number. Structures with a fixed compressive strain of 1% but variable well width, and also with a fixed well width but variable strain from 0% to 1.4% have been considered. It has been found that there is little benefit to having compressive strains greater than 1%. For structures with a fixed 1% compressive strain and unstrained barriers, an optimum structure for lowest threshold current density and a high differential gain has been found to consist of six 35 A quantum-wells. In addition, compensated strain (CS) structures with compressive wells and tensile barriers have been examined. It is shown that the conduction band offset can be significantly increased and the valence band offset reduced in such structures, to give band-offset ratios comparable with aluminium based 1.3 μm devices. The gain calculations performed suggest that there is little degradation in the threshold carrier density or differential gain due to these alterations in the band offsets; and hence a better laser performance is expected due to a reduction in thermal leakage currents due to the improved electron confinement. The experimental study concentrates on looking at certain key design parameters to investigate their effect on the laser performance. These design parameters range from the number of quantum

  11. Strained silicon/silicon germanium heterojunction n-channel metal oxide semiconductor field effect transistors

    International Nuclear Information System (INIS)

    Olsen, Sarah H.

    2002-01-01

    Investigations into the performance of strained silicon/silicon-germanium (Si/SiGe) n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) have been carried out. Theoretical predictions suggest that use of a strained Si/SiGe material system with advanced material properties compared with conventional silicon allows enhanced MOSFET device performance. This study has therefore investigated the practical feasibility of obtaining superior electrical performance using a Si/SiGe material system. The MOSFET devices consisted of a strained Si surface channel and were fabricated on relaxed SiGe material using a reduced thermal budget process in order to preserve the strain. Two batches of strained Si/SiGe devices fabricated on material grown by differing methods have been analysed and both showed good transistor action. A correlation of electrical and physical device data established that the electrical device behaviour was closely related to the SiGe material quality, which differed depending on growth technique. The cross-wafer variation in the electrical performance of the strained Si/SiGe devices was found to be a function of material quality, thus the viability of Si/SiGe MOSFET technology for commercial applications has been addressed. Of particular importance was the finding that large-scale 'cross-hatching' roughness associated with relaxed SiGe alloys led to degradation in the small-scale roughness at the gate oxide interface, which affects electrical device performance. The fabrication of strained Si MOSFET devices on high quality SiGe material thus enabled significant performance gains to be realised compared with conventional Si control devices. In contrast, the performance of devices fabricated on material with severe cross-hatching roughness was found to be diminished by the nanoscale oxide interface roughness. The effect of device processing on SiGe material with differing as-grown roughness has been carried out and compared with the reactions

  12. Towards the determination of deformation rates - pinch-and-swell structures as a natural and simulated paleo-strain rate gage

    Science.gov (United States)

    Peters, Max; Poulet, Thomas; Karrech, Ali; Regenauer-Lieb, Klaus; Herwegh, Marco

    2014-05-01

    Layered rocks deformed under viscous deformation conditions frequently show boudinage, a phenomenon that results from differences in effective viscosity between the involved layers. In the case of continuous necking of a mechanically stiffer layer embedded in a weaker matrix, symmetric boudins are interpreted as the result of dominant visco-plastic deformation (Goscombe et al., 2004). However, information on the physical conditions, material properties and deformation processes are yet unknown. Natural samples deformed under low-grade (TAustin and Evans (2007) combined with the thermodynamic approach of Regenauer-Lieb and Yuen (2004). Depending on the dissipated energy, grain sizes in these domains vary substantially in space and time. While low strain rates (low stresses) in the swells favor grain growth and GSI dominated deformation, high strain rates in the pinches provoke dramatic grain size reduction with an increasing contribution of GSS as a function of decreasing grain size. The development of symmetric necks observed in nature thus seems to coincide with the transition from dislocation to diffusion creep dominated flow with continuous grain size reduction and growth from swell to neck at relatively high extensional strains. REFERENCES Austin, N. and Evans, B. (2007). Paleowattmeters: A scaling relation for dynamically recrystallized grain size. Geology, 35. Goscombe, B.D., Passchier, C.W. and Hand, M. (2004). Boudinage classification: End-member boudin types and modified boudin structures, Journal of Structural Geology, 26. Herwegh, M., Poulet, T., Karrech, A. and Regenauer-Lieb, K. (in press). From transient to steady state deformation and grain size: A thermodynamic approach using elasto-visco-plastic numerical modeling. Journal of Geophysical Research. Karrech, A., Regenauer-Lieb, K. and Poulet, T. (2011a). A Damaged visco-plasticity model for pressure and temperature sensitive geomaterials. Journal of Engineering Science 49. Regenauer-Lieb, K. and Yuen

  13. Neutron moisture gaging of agricultural soil

    International Nuclear Information System (INIS)

    Pospisil, S.; Janout, Z.; Kovacik, M.

    1987-01-01

    The design is described of a neutron moisture gage which consists of a measuring probe, neutron detector, small electronic recording device and a 241 Am-Be radionuclide source. The neutron detector consists of a surface barrier semiconductor silicon detector and a conversion layer of lithium fluoride. The detection of triton which is the reaction product of lithium with neutrons by the silicon detector is manifested as a voltage pulse. The detector has low sensitivity for fast neutrons and for gamma radiation and is suitable for determining moisture values in large volume samples. Verification and calibration measurements were carried out of chernozem, brown soil and podzolic soils in four series. The results are tabulated. Errors of measurement range between 0.8 to 1.0%. The precision of measurement could be improved by the calibration of the device for any type of soil. (E.S.). 4 tabs., 6 refs., 5 figs

  14. Measurement of minute local strain in semiconductor materials and electronic devices by using a highly parallel X-ray microbeam

    CERN Document Server

    Matsui, J; Yokoyama, K; Takeda, S; Katou, M; Kurihara, H; Watanabe, K; Kagoshima, Y; Kimura, S

    2003-01-01

    We have developed an X-ray microbeam with a small angular divergence by adopting X-ray optics with successive use of asymmetric Bragg reflection from silicon crystals for the both polarizations of the synchrotron X-rays. The microbeam actually obtained is several microns in size and possesses an angular divergence of less than 2 arcsec which enables us to measure the strain of 10 sup - sup 5 -10 sup - sup 6. By scanning the sample against the microbeam, distribution of the minute local strain in various regions of semiconductor crystals for electronic devices, e.g., the strain around the SiO sub 2 /Si film edge in silicon devices, the strain in an InGaAsP/InP stripe laser were measured.

  15. Measurement of minute local strain in semiconductor materials and electronic devices by using a highly parallel X-ray microbeam

    International Nuclear Information System (INIS)

    Matsui, J.; Tsusaka, Y.; Yokoyama, K.; Takeda, S.; Katou, M.; Kurihara, H.; Watanabe, K.; Kagoshima, Y.; Kimura, S.

    2003-01-01

    We have developed an X-ray microbeam with a small angular divergence by adopting X-ray optics with successive use of asymmetric Bragg reflection from silicon crystals for the both polarizations of the synchrotron X-rays. The microbeam actually obtained is several microns in size and possesses an angular divergence of less than 2 arcsec which enables us to measure the strain of 10 -5 -10 -6 . By scanning the sample against the microbeam, distribution of the minute local strain in various regions of semiconductor crystals for electronic devices, e.g., the strain around the SiO 2 /Si film edge in silicon devices, the strain in an InGaAsP/InP stripe laser were measured

  16. Measurement of minute local strain in semiconductor materials and electronic devices by using a highly parallel X-ray microbeam

    Energy Technology Data Exchange (ETDEWEB)

    Matsui, J. E-mail: matsui@sci.himeji-tech.ac.jp; Tsusaka, Y.; Yokoyama, K.; Takeda, S.; Katou, M.; Kurihara, H.; Watanabe, K.; Kagoshima, Y.; Kimura, S

    2003-01-01

    We have developed an X-ray microbeam with a small angular divergence by adopting X-ray optics with successive use of asymmetric Bragg reflection from silicon crystals for the both polarizations of the synchrotron X-rays. The microbeam actually obtained is several microns in size and possesses an angular divergence of less than 2 arcsec which enables us to measure the strain of 10{sup -5}-10{sup -6}. By scanning the sample against the microbeam, distribution of the minute local strain in various regions of semiconductor crystals for electronic devices, e.g., the strain around the SiO{sub 2}/Si film edge in silicon devices, the strain in an InGaAsP/InP stripe laser were measured.

  17. GAGES-II: Geospatial Attributes of Gages for Evaluating Streamflow

    Science.gov (United States)

    Falcone, James A.

    2011-01-01

    This dataset, termed "GAGES II", an acronym for Geospatial Attributes of Gages for Evaluating Streamflow, version II, provides geospatial data and classifications for 9,322 stream gages maintained by the U.S. Geological Survey (USGS). It is an update to the original GAGES, which was published as a Data Paper on the journal Ecology's website (Falcone and others, 2010b) in 2010. The GAGES II dataset consists of gages which have had either 20+ complete years (not necessarily continuous) of discharge record since 1950, or are currently active, as of water year 2009, and whose watersheds lie within the United States, including Alaska, Hawaii, and Puerto Rico. Reference gages were identified based on indicators that they were the least-disturbed watersheds within the framework of broad regions, based on 12 major ecoregions across the United States. Of the 9,322 total sites, 2,057 are classified as reference, and 7,265 as non-reference. Of the 2,057 reference sites, 1,633 have (through 2009) 20+ years of record since 1950. Some sites have very long flow records: a number of gages have been in continuous service since 1900 (at least), and have 110 years of complete record (1900-2009) to date. The geospatial data include several hundred watershed characteristics compiled from national data sources, including environmental features (e.g. climate – including historical precipitation, geology, soils, topography) and anthropogenic influences (e.g. land use, road density, presence of dams, canals, or power plants). The dataset also includes comments from local USGS Water Science Centers, based on Annual Data Reports, pertinent to hydrologic modifications and influences. The data posted also include watershed boundaries in GIS format. This overall dataset is different in nature to the USGS Hydro-Climatic Data Network (HCDN; Slack and Landwehr 1992), whose data evaluation ended with water year 1988. The HCDN identifies stream gages which at some point in their history had

  18. Exploiting strain to enhance the Bi incorporation in GaAs-based III/V semiconductors using MOVPE

    Science.gov (United States)

    Nattermann, L.; Ludewig, P.; Sterzer, E.; Volz, K.

    2017-07-01

    Bi containing III/V semiconductors are frequently mentioned for their importance as part of the next generation of optoelectronic devices. Bi containing ternary and quaternary materials like Ga(AsBi), Ga(NAsBi) or Ga(PAsBi) are promising candidates to meet the requirements for new laser structures for telecommunications and solar cell applications. However, in previous studies it was determined that the incorporation of sufficient amounts of Bi still poses a challenge, especially when using MOVPE (metalorganic vapour phase epitaxy) as the growth technique. In order to figure out which mechanisms are responsible for the limitation of Bi incorporation, this work deals with the question of whether there is a relationship between strain, induced by the large Bi atoms, and the saturation level of Bi incorporation in Ga(AsBi). Ga(NAsBi) structures were grown by MOVPE at a low temperature, 400 °C, and compared to Ga(PAsBi) as well as Ga(AsBi) growth. By using the two group V atoms P and N, which have a smaller covalent radius than Bi, the effect of local strain compensation was investigated systematically. The comparison of Bi incorporation in the two quaternary materials systems proved the importance of local strain for the limitation of Bi incorporation, in addition to other effects, like Bi surface coverage and hydrocarbon groups at the growth surface. This, of course, also opens up ways to strain-state-engineer the Bi incorporation in semiconductor alloys.

  19. Effects of strain on phonon interactions and phase nucleation in several semiconductor and nano particle systems

    Science.gov (United States)

    Tallman, Robert E.

    Raman scattering is utilized to explore the effects of applied pressure and strain on anharmonic phonon interactions and nucleation of structural transitions in several bulk and nanoparticle semiconductor systems. The systems investigated are bulk ZnS and ZnSe in several isotopic compositions, InP/CdS core/shell nanoparticles exhibiting confined and surface optical Raman modes, and amorphous selenium films undergoing photo-induced crystallization. The anharmonic decay of long-wavelength optical modes into two-phonon acoustic combinations modes is studied in 64Zn32S, 64Zn34S, natZnatS bulk crystals by measuring the TO(Gamma) Raman line-shape as a function of applied hydrostatic pressure. The experiments are carried out at room temperature and 16K for pressures up to 150 kbars using diamond-anvil cells. The most striking effects occur in 68Zn32S where the TO(Gamma) peak narrows by a factor of 10 and increases in intensity at pressures for which the TO(Gamma) frequency has been tuned into a gap in the two-phonon density of states (DOS). In all the isotopic compositions, the observed phonon decay processes can be adequately explained by a second order perturbation treatment of the anharmonic coupling between TO(Gamma) and TA + LA combinations at various critical points, combined with an adiabatic bond-charge model for the phonon DOS and the known mode Gruneisen parameters. Bulk ZnSe crystals exhibit very different behavior. Here we find that anharmonic decay alone can not explain the excessive (˜ 60 cm-1 ) broadening in the TO(Gamma) Raman peak observed as the pressure approaches to within 50kbar of the ZB -> B1 phase transition (at P ˜ 137 kbar). Rather the broadening appears to arise from antecedent nucleation of structural changes within nanoscopic domains, with the mechanism for line-shape changes being mode mixing via localization and disorder instead of anharmonicity. To sort out these contributions, pressure experiments on natural ZnSe and on isotopically pure

  20. Monitoring of prestressed concrete pressure vessels. 1. An overview of concrete embedment strain instrumentation and calibration test results for selected concrete embedment strain meters

    International Nuclear Information System (INIS)

    Naus, D.J.; Hurtt, C.C.

    1978-01-01

    The report presents results of calibration tests on strain meters. The approach was divided into two phases: (1) an overview of meter performance criteria for PCPV applications and techniques for strain measurements in concrete and (2) procurement of commercially available gages and their evaluation to assess the reliability of manufacturer-supplied calibration factors. Calibration test results for gages embedded in 15.2-cm-diam by 54-cm cylindrical concrete specimens indicated that calibration factors should be determined (verified) by embedding samples of the gages in test specimens fabricated using a representative mix and that further research should be conducted on other measurement techniques based on inductance, capacitance, semiconductors, and fluidic principles

  1. Stage measurement at gaging stations

    Science.gov (United States)

    Sauer, Vernon B.; Turnipseed, D. Phil

    2010-01-01

    Stream and reservoir stage are critical parameters in the computation of stream discharge and reservoir volume, respectively. In addition, a record of stream stage is useful in the design of structures that may be affected by stream elevation, as well as for the planning for various uses of flood plains. This report describes equipment and methodology for the observation, sensing, and recording of stage in streams and reservoirs. Although the U.S. Geological Survey (USGS) still uses the traditional, basic stilling-well float system as a predominant gaging station, modern electronic stage sensors and water-level recorders are now commonly used. Bubble gages coupled with nonsubmersible pressure transducers eliminate the need for stilling wells. Submersible pressure transducers have become common in use for the measurement of stage in both rivers and lakes. Furthermore, noncontact methods, such as radar, acoustic, and laser methods of sensing water levels, are being developed and tested, and in the case of radar, are commonly used for the measurement of stage. This report describes commonly used gaging-station structures, as well as the design and operation of gaging stations. Almost all of the equipment and instruments described in this report will meet the accuracy standard set by the USGS Office of Surface Water (OSW) for the measurement of stage for most applications, which is ±0.01 foot (ft) or 0.2 percent of the effective stage. Several telemetry systems are used to transmit stage data from the gaging station to the office, although satellite telemetry has become the standard. These telemetry systems provide near real-time stage data, as well as other information that alerts the hydrographer to extreme or abnormal events, and instrument malfunctions.

  2. Strain at a semiconductor nanowire-substrate interface studied using geometric phase analysis, convergent beam electron diffraction and nanobeam diffraction

    DEFF Research Database (Denmark)

    Persson, Johan Mikael; Wagner, Jakob Birkedal; Dunin-Borkowski, Rafal E.

    2011-01-01

    Semiconductor nanowires have been studied using electron microscopy since the early days of nanowire growth, e.g. [1]. A common approach for analysing nanowires using transmission electron microscopy (TEM) involves removing them from their substrate and subsequently transferring them onto carbon...... with CBED and NBED [4,5] have shown a high degree of consistency. Strain has previously only been measured in nanowires removed from their substrate [6], or only using GPA [7]. The sample used for the present investigation was an InP nanowire grown on a Si substrate using metal organic vapor phase...

  3. Multiwavelength anomalous diffraction and diffraction anomalous fine structure to study composition and strain of semiconductor nano structures

    International Nuclear Information System (INIS)

    Favre-Nicolin, V.; Proietti, M.G.; Leclere, C.; Renevier, H.; Katcho, N.A.; Richard, M.I.

    2012-01-01

    The aim of this paper is to illustrate the use of Multi-Wavelength Anomalous Diffraction (MAD) and Diffraction Anomalous Fine Structure (DAFS) spectroscopy for the study of structural properties of semiconductor nano-structures. We give a brief introduction on the basic principles of these techniques providing a detailed bibliography. Then we focus on the data reduction and analysis and we give specific examples of their application on three different kinds of semiconductor nano-structures: Ge/Si nano-islands, AlN capped GaN/AlN Quantum Dots and AlGaN/AlN Nano-wires. We show that the combination of MAD and DAFS is a very powerful tool to solve the structural problem of these materials of high technological impact. In particular, the effects of composition and strain on diffraction are disentangled and composition can be determined in a reliable way, even at the interface between nano-structure and substrate. We show the great possibilities of this method and give the reader the basic tools to undertake its use. (authors)

  4. Piezoelectric and deformation potential effects of strain-dependent luminescence in semiconductor quantum well structures

    DEFF Research Database (Denmark)

    Zhang, Aihua; Peng, Mingzeng; Willatzen, Morten

    2017-01-01

    The mechanism of strain-dependent luminescence is important for the rational design of pressure-sensing devices. The interband momentum-matrix element is the key quantity for understanding luminescent phenomena. We analytically solved an infinite quantum well (IQW) model with strain, in the frame......The mechanism of strain-dependent luminescence is important for the rational design of pressure-sensing devices. The interband momentum-matrix element is the key quantity for understanding luminescent phenomena. We analytically solved an infinite quantum well (IQW) model with strain......, in the framework of the 6 × 6 k·p Hamiltonian for the valence states, to directly assess the interplay between the spin-orbit coupling and the strain-induced deformation potential for the interband momentum-matrix element. We numerically addressed problems of both the infinite and IQWs with piezoelectric fields...... to elucidate the effects of the piezoelectric potential and the deformation potential on the strain-dependent luminescence. The experimentally measured photoluminescence variatio½n as a function of pressure can be qualitatively explained by the theoretical results....

  5. The Effects of Strain on the Electrical Properties of Thin Evaporated Films of Semiconductor Compounds

    Science.gov (United States)

    Steel, G. G.

    1970-01-01

    Reports on project intended to establish how electrical resistance, Hall voltage, and magnetoresistance change when a thin film specimen is subjected to mechanical strain. Found resistance of semiconducting film of indium arsenide and indium antimonide decreases with tension and increases with compression. (LS)

  6. Gage for measuring coastal erosion and sedimentation

    Science.gov (United States)

    Carpini, T. D.; Moughon, W. C.

    1970-01-01

    Underwater sand height gage, which measures heights up to 12 inches, is comprised of two standard flush-diaphragm pressure transducers. Gage is very sensitive to buried water heights and is useful as a research tool in study of wet earth and landslide phenomena.

  7. Electrical characterization of Ω-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with - and channel orientations

    International Nuclear Information System (INIS)

    Habicht, Stefan; Feste, Sebastian; Zhao, Qing-Tai; Buca, Dan; Mantl, Siegfried

    2012-01-01

    Nanowire-array metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated along and crystal directions on (001) un-/strained silicon-on-insulator substrates. Lateral strain relaxation through patterning was employed to transform biaxial tensile strain into uniaxial tensile strain along the nanowire. Devices feature ideal subthreshold swings and maximum on-current/off-current ratios of 10 11 for n and p-type transistors on both substrates. Electron and hole mobilities were extracted by split C–V method. For p-MOSFETs an increased mobility is observed for channel direction devices compared to devices. The n-MOSFETs showed a 45% increased electron mobility compared to devices. The comparison of strained and unstrained n-MOSFETs along and clearly demonstrates improved electron mobilities for strained channels of both channel orientations.

  8. Non-metallic gage for gap

    International Nuclear Information System (INIS)

    Hiroki, Hideo.

    1996-01-01

    The present invention concerns a non-metallic gage for detecting a gap which can not be seen from the out side such as a gap between a water pipe and fuel rods without damaging an objective material as to whether the gap is formed within a standard value or not. The gage is made of a synthetic resin, for example, polyacetal having such a hardness as not damaging the objective material and endurable to repeating flexure upon use. The gage comprises a short gage portion having a predetermined standard thickness and an flexible extended connection portion reduced in the thickness. Provision of the extended connection portion enables wide range flexure thereof such as ±60deg relative to insertion direction during insertion operation upon testing to solve a drawback in the prior art such as worry of breakage of the gage, thereby enabling to conduct inspection rapidly at high reliability. (N.H.)

  9. The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminum and phosphorus implanted silicon on sapphire

    Science.gov (United States)

    Pisciotta, B. P.; Gross, C.

    1976-01-01

    Partial annealing of damage to the crystal lattice during ion implantation reduces the temperature coefficient of resistivity of ion-implanted silicon, while facilitating controlled doping. Reliance on this method for temperature compensation of the resistivity and strain-gage factor is discussed. Implantation conditions and annealing conditions are detailed. The gage factor and its temperature variation are not drastically affected by crystal damage for some crystal orientations. A model is proposed to account for the effects of electron damage on the temperature dependence of resistivity and on silicon piezoresistance. The results are applicable to the design of silicon-on-sapphire strain gages with high gage factors.

  10. Variable magnification dual lens electron holography for semiconductor junction profiling and strain mapping

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y.Y., E-mail: wangyy@us.ibm.com [IBM Micro-electronics Division, Zip 40E, Hudson Valley Research Park, 2070 Route 52, Hopewell Junction, NY 12533 (United States); Li, J.; Domenicucci, A. [IBM Micro-electronics Division, Zip 40E, Hudson Valley Research Park, 2070 Route 52, Hopewell Junction, NY 12533 (United States); Bruley, J. [IBM TJ Watson Research Center, 1101 Kitchawan Road, Route 134 Yorktown Heights, NY 10598 (United States)

    2013-01-15

    Dual lens operation for electron holography, which was developed previously (Wang et al., Ultramicroscopy 101 (2004) 63-72; US patent: 7,015,469 B2 (2006)), is re-investigated for bright field (junction profiling) and dark field (strain mapping) electron holography using FEI instrumentation (i.e. F20 and Titan). It is found that dual lens operation provides a wide operational range for electron holography. In addition, the dark field image tilt increases at high objective lens current to include Si Left-Pointing-Angle-Bracket 0 0 4 Right-Pointing-Angle-Bracket diffraction spot. Under the condition of high spatial resolution (1 nm fringe spacing), a large field of view (450 nm), and high fringe contrast (26%) with dual lens operation, a junction map is obtained and strain maps of Si device on Left-Pointing-Angle-Bracket 2 2 0 Right-Pointing-Angle-Bracket and Left-Pointing-Angle-Bracket 0 0 4 Right-Pointing-Angle-Bracket diffraction are acquired. In this paper, a fringe quality number, N Prime , which is number of fringe times fringe contrast, is proposed to estimate the quality of an electron hologram and mathematical reasoning for the N Prime number is provided. -- Highlights: Black-Right-Pointing-Pointer Dual lens electron holography is implemented on FEI instruments (Titan and F20). Black-Right-Pointing-Pointer Wide range of field of view (0.1-0.9 {mu}m) and fringe spacing (0.5-6 nm) is achieved. Black-Right-Pointing-Pointer Fringe quality number is proposed to quantify the quality of an electron hologram. Black-Right-Pointing-Pointer Junction map at high spatial resolution is provided. Black-Right-Pointing-Pointer Strain maps along Left-Pointing-Angle-Bracket 2 2 0 Right-Pointing-Angle-Bracket and Left-Pointing-Angle-Bracket 0 0 4 Right-Pointing-Angle-Bracket direction of Si by dark field electron holography are reported.

  11. Variable magnification dual lens electron holography for semiconductor junction profiling and strain mapping

    International Nuclear Information System (INIS)

    Wang, Y.Y.; Li, J.; Domenicucci, A.; Bruley, J.

    2013-01-01

    Dual lens operation for electron holography, which was developed previously (Wang et al., Ultramicroscopy 101 (2004) 63–72; US patent: 7,015,469 B2 (2006)), is re-investigated for bright field (junction profiling) and dark field (strain mapping) electron holography using FEI instrumentation (i.e. F20 and Titan). It is found that dual lens operation provides a wide operational range for electron holography. In addition, the dark field image tilt increases at high objective lens current to include Si 〈0 0 4〉 diffraction spot. Under the condition of high spatial resolution (1 nm fringe spacing), a large field of view (450 nm), and high fringe contrast (26%) with dual lens operation, a junction map is obtained and strain maps of Si device on 〈2 2 0〉 and 〈0 0 4〉 diffraction are acquired. In this paper, a fringe quality number, N′, which is number of fringe times fringe contrast, is proposed to estimate the quality of an electron hologram and mathematical reasoning for the N′ number is provided. -- Highlights: ► Dual lens electron holography is implemented on FEI instruments (Titan and F20). ► Wide range of field of view (0.1–0.9 μm) and fringe spacing (0.5–6 nm) is achieved. ► Fringe quality number is proposed to quantify the quality of an electron hologram. ► Junction map at high spatial resolution is provided. ► Strain maps along 〈2 2 0〉 and 〈0 0 4〉 direction of Si by dark field electron holography are reported.

  12. Variable magnification dual lens electron holography for semiconductor junction profiling and strain mapping.

    Science.gov (United States)

    Wang, Y Y; Li, J; Domenicucci, A; Bruley, J

    2013-01-01

    Dual lens operation for electron holography, which was developed previously (Wang et al., Ultramicroscopy 101 (2004) 63-72; US patent: 7,015,469 B2 (2006)), is re-investigated for bright field (junction profiling) and dark field (strain mapping) electron holography using FEI instrumentation (i.e. F20 and Titan). It is found that dual lens operation provides a wide operational range for electron holography. In addition, the dark field image tilt increases at high objective lens current to include Si diffraction spot. Under the condition of high spatial resolution (1 nm fringe spacing), a large field of view (450 nm), and high fringe contrast (26%) with dual lens operation, a junction map is obtained and strain maps of Si device on and diffraction are acquired. In this paper, a fringe quality number, N', which is number of fringe times fringe contrast, is proposed to estimate the quality of an electron hologram and mathematical reasoning for the N' number is provided. Copyright © 2012 Elsevier B.V. All rights reserved.

  13. Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor: structure, tail states and strain effects

    International Nuclear Information System (INIS)

    De Jamblinne de Meux, A; Genoe, J; Heremans, P; Pourtois, G

    2015-01-01

    We study the evolution of the structural and electronic properties of crystalline indium gallium zinc oxide (IGZO) upon amorphization by first-principles calculation. The bottom of the conduction band (BCB) is found to be constituted of a pseudo-band of molecular orbitals that resonate at the same energy on different atomic sites. They display a bonding character between the s orbitals of the metal sites and an anti-bonding character arising from the interaction between the oxygen and metal s orbitals. The energy level of the BCB shifts upon breaking of the crystal symmetry during the amorphization process, which may be attributed to the reduction of the coordination of the cationic centers. The top of the valence band (TVB) is constructed from anti-bonding oxygen p orbitals. In the amorphous state, they have random orientation, in contrast to the crystalline state. This results in the appearance of localized tail states in the forbidden gap above the TVB. Zinc is found to play a predominant role in the generation of these tail states, while gallium hinders their formation. Last, we study the dependence of the fundamental gap and effective mass of IGZO on mechanical strain. The variation of the gap under strain arises from the enhancement of the anti-bonding interaction in the BCB due to the modification of the length of the oxygen–metal bonds and/or to a variation of the cation coordination. This effect is less pronounced for the amorphous material compared to the crystalline material, making amorphous IGZO a semiconductor of choice for flexible electronics. Finally, the effective mass is found to increase upon strain, in contrast to regular materials. This counterintuitive variation is due to the reduction of the electrostatic shielding of the cationic centers by oxygen, leading to an increase of the overlaps between the metal orbitals at the origin of the delocalization of the BCB. For the range of strain typically met in flexible electronics, the induced

  14. Discharge measurements at gaging stations

    Science.gov (United States)

    Turnipseed, D. Phil; Sauer, Vernon B.

    2010-01-01

    The techniques and standards for making discharge measurements at streamflow gaging stations are described in this publication. The vertical axis rotating-element current meter, principally the Price current meter, has been traditionally used for most measurements of discharge; however, advancements in acoustic technology have led to important developments in the use of acoustic Doppler current profilers, acoustic Doppler velocimeters, and other emerging technologies for the measurement of discharge. These new instruments, based on acoustic Doppler theory, have the advantage of no moving parts, and in the case of the acoustic Doppler current profiler, quickly and easily provide three-dimensional stream-velocity profile data through much of the vertical water column. For much of the discussion of acoustic Doppler current profiler moving-boat methodology, the reader is referred to U.S. Geological Survey Techniques and Methods 3-A22 (Mueller and Wagner, 2009). Personal digital assistants (PDAs), electronic field notebooks, and other personal computers provide fast and efficient data-collection methods that are more error-free than traditional hand methods. The use of portable weirs and flumes, floats, volumetric tanks, indirect methods, and tracers in measuring discharge are briefly described.

  15. Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal–Insulator–Semiconductor Field-Effect Transistors with SiGe stressors

    International Nuclear Information System (INIS)

    Moriyama, Yoshihiko; Kamimuta, Yuuichi; Ikeda, Keiji; Tezuka, Tsutomu

    2012-01-01

    Tensile strain of over 1% in Ge stripes sandwiched between a pair of SiGe source-drain stressors was demonstrated. The Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET)-like structures were fabricated on a (001)-Ge substrate having SiO 2 dummy-gate stripes with widths down to 26 nm. Recess-regions adjacent to the dummy-gate stripes were formed by an anisotropic wet etching technique. A damage-free and well-controlled anisotropic wet etching process is developed in order to avoid plasma-induced damage during a conventional Reactive-ion Etching process. The SiGe stressors were epitaxially grown on the recesses to simulate strained Ge n-channel Metal–Insulator–Semiconductor Field-Effect Transistors (MISFETs) having high electron mobility. A micro-Raman spectroscopy measurement revealed tensile strain in the narrow Ge regions which became higher for narrower regions. Tensile strain of up to 1.2% was evaluated from the measurement under an assumption of uniaxial strain configuration. These results strongly suggest that higher electron mobility than the upper limit for a Si-MOSFET is obtainable in short-channel strained Ge-nMISFETs with the embedded SiGe stressors.

  16. Latin square three dimensional gage master

    Science.gov (United States)

    Jones, Lynn L.

    1982-01-01

    A gage master for coordinate measuring machines has an nxn array of objects distributed in the Z coordinate utilizing the concept of a Latin square experimental design. Using analysis of variance techniques, the invention may be used to identify sources of error in machine geometry and quantify machine accuracy.

  17. Low pressure gage type VM-01

    International Nuclear Information System (INIS)

    Brandea, I.; Curuia, M.; Culcer, M.

    2000-01-01

    High vacuum systems became an important element of many applied technologies, from gas analysers to rocket engines. An intelligent apparatus for pressure measurement in the range of 10 -3 - 10 -8 mbar, with incorporated INTEL 80C51 microcontroller is presented. Based on a Bayard-Alpert hot cathode gage, equally developed in our institute, the pressure gage allows the displaying of different operation parameters and also of the error codes for different kinds of malfunctioning, as for instance missing of grid voltage, grid-collector breakdown, pressure increasing above 10 -3 mbar. Its operation is based on a microcontroller assembly language program especially worked out and introduced in the central units EPROM memory. The gage characteristics for different gases are also introduced in an EPROM memory, and the type of the gas is selected by the operator from the front panel. One can select also from the front panel the pressure unit (mbar, torr, Pa). If a remote control is necessary, this can be done by means of a PC, with a program written in the LabVIEW graphical programming language. The pressure gage was tested and calibrated in relation with an EDWARDS vacuum measuring system and provided a good accuracy (better than 25%). Its field of application is both laboratory and industrial measurements. Its main features are: - supply voltage, 220 V ac / 50 Hz; - power consumption, 30 W; - gage's grid supply voltage, 160 V; grid current, 2 mA / p = 10 -5 ...10 -8 mbar and 0.2 mA / p = 10 -3 ...10 -5 mbar; - cathode heating current, max. 3 A; - measuring range, 10 -3 ...10 -8 mbar; - error of measurement, ±35%; - remote control, according to the RS232 standard; - size, 320 x 200 x 100 mm; - weight, 3.5 Kg. (authors)

  18. Improved nuclear gage development - phase i and ii. Interim report

    International Nuclear Information System (INIS)

    Chan, E.L.; Champion, F.C.; Castanon, D.R.; Chang, J.C.; Hannon, J.B.

    1976-09-01

    This report contains Phase I and II of an investigation covering the design and construction of a prototype nuclear-moisture-density backscatter gage. Gage development was based upon the analysis of several factors which affect gage performance. This research indicated that the prototype gage measurements are approximately equivalent to measurements obtained by a commercial transmission gage. The implication of this research finding concerns the qualification of the backscatter test method as a valid, reliable, and expedient procedure for determining in-situ soil conditions

  19. Sensitivity of hot-cathode ionization vacuum gages in several gases

    Science.gov (United States)

    Holanda, R.

    1972-01-01

    Four hot-cathode ionization vacuum gages were calibrated in 12 gases. The relative sensitivities of these gages were compared to several gas properties. Ionization cross section was the physical property which correlated best with gage sensitivity. The effects of gage accelerating voltage and ionization-cross-section energy level were analyzed. Recommendations for predicting gage sensitivity according to gage type were made.

  20. Design, analysis, and initial testing of a fiber-optic shear gage for three-dimensional, high-temperature flows

    Science.gov (United States)

    Orr, Matthew W.

    This investigation concerns the design, analysis, and initial testing of a new, two-component wall shear gage for 3D, high-temperature flows. This gage is a direct-measuring, non-nulling design with a round head surrounded by a small gap. Two flexure wheels are used to allow small motions of the floating head. Fiber-optic displacement sensors measure how far the polished faces of counterweights on the wheels move in relation to a fixed housing as the primary measurement system. No viscous damping was required. The gage has both fiber-optic instrumentation and strain gages mounted on the flexures for validation of the newer fiber optics. The sensor is constructed of Haynes RTM 230RTM, a high-temperature nickel alloy. The gage housing is made of 316 stainless steel. All components of the gage in pure fiber-optic form can survive to a temperature of 1073 K. The bonding methods of the backup strain gages limit their maximum temperature to 473 K. The dynamic range of the gage is from 0--500 Pa (0--10g) and higher shears can be measured by changing the floating head size. Extensive use of finite element modeling was critical to the design and analysis of the gage. Static structural, modal, and thermal analyses were performed on the flexures using the ANSYS finite element package. Static finite element analysis predicted the response of the flexures to a given load, and static calibrations using a direct force method confirmed these results. Finite element modal analysis results were within 16.4% for the first mode and within 30% for the second mode when compared with the experimentally determined modes. Vibration characteristics of the gage were determined from experimental free vibration data after the gage was subjected to an impulse. Uncertainties in the finished geometry make this level of error acceptable. A transient thermal analysis examined the effects of a very high heat flux on the exposed head of the gage. The 100,000 W/m2 heat flux used in this analysis is

  1. GAGES: A stream gage database for evaluating natural and alteredflow conditions in the conterminous United States

    Science.gov (United States)

    Falcone, James A.; Carlisle, Daren M.; Wolock, David M.; Meador, Michael R.

    2010-01-01

    Stream flow is a controlling element in the ecology of rivers and streams. Knowledge of the natural flow regime facilitates the assessment of whether specific hydrologic attributes have been altered by humans in a particular stream and the establishment of specific goals for stream-flow restoration. Because most streams are ungaged or have been altered by human influences, characterizing the natural flow regime is often only possible by estimating flow characteristics based on nearby stream gages of reference quality, i.e., gaged locations that are least disturbed by human influences. The ability to evaluate natural stream flow, that which is not altered by human activities, would be enhanced by the existence of a nationally consistent and up-to-date database of gages in relatively undisturbed watersheds.

  2. Band structure of semiconductor compounds of Mg sub 2 Si and Mg sub 2 Ge with strained crystal lattice

    CERN Document Server

    Krivosheeva, A V; Shaposhnikov, V L; Krivosheev, A E; Borisenko, V E

    2002-01-01

    The effect of isotopic and unaxial deformation of the crystal lattice on the electronic band structure of indirect band gap semiconductors Mg sub 2 Si and Mg sub 2 Ge has been simulated by means of the linear augmented plane wave method. The reduction of the lattice constant down to 95 % results in a linear increase of the direct transition in magnesium silicide by 48%. The stresses arising under unaxial deformation shift the bands as well as result in splitting of degenerated states. The dependence of the interband transitions on the lattice deformation is nonlinear in this case

  3. First-principles studies on the pressure dependences of the stress-strain relationship and elastic stability of semiconductors

    International Nuclear Information System (INIS)

    Wang, S Q; Ye, H Q; Yip, S

    2006-01-01

    We investigate the stress-strain relationship and elastic stability of zinc-blende GaP, GaN, InP and BN lattices under hydrostatic pressure by first-principles calculation. A simple and direct ab initio implementation for studying the mechanical properties of cubic crystals is developed. The four phases' full-set stress-strain coefficients in wide pressure ranges are theoretically calculated. The fundamental mechanism of elastic stability and the origin of phase transformation under hydrostatic pressure are explored. We found that the abilities for most of these lattices are enhanced to sustain axial strain but weaken to shear strain under higher pressure. The conditions of lattice stability are analysed using both the thermodynamic work-energy criterion and the elastic-stiffness criteria. We show that the lattice collapse of the perfect crystals is caused by the disappearance of their bulk moduli under volume dilation. Lattice defects are considered to be the main reason causing phase transformation under pressure. The correlation between the phonon softening and the variation of elastic coefficients is studied. The pressure dependence of the Kleinman internal strain parameter and its relationship to elastic stability is also explored

  4. INDUSTRIAL MEASUREMENT AND CONTROL OF SLURRIES USING RADIOISOTOPE GAGES

    Energy Technology Data Exchange (ETDEWEB)

    Cook, Jr., H. L.

    1963-09-15

    Radioactivity gages are available in a variety of configurations to suit the problem of process measurement. The placement of any gage configuration must be selected carefully so that the process material flowing past the gage is representative of actual process conditions. The initial calibration of a gage is relatively simple but when the gage reading is compared with the existing manual sample measurement, confusion can result if the manual measurement is not basically accurate or subject to human error. Routine mechanical and electrical maintenance of the gage is relatively simple, because modern gages use solidstate circuitry with modular plug-in construction. Thus, routine maintenance of the gage is usually limited to restandardization to compensate for source decay. Two types of zero suppression are available, via. fixed and reductionwith-time. If reduction-with-time suppression is used the re-standardization period is about ten times longer than that required for fixed-zero suppression. Routine maintenance of the process piping and machinery is necessary to assure that a representative process material sample continues to flow through the gage. (auth)

  5. SEMICONDUCTOR DEVICES: Two-dimensional threshold voltage analytical model of DMG strained-silicon-on-insulator MOSFETs

    Science.gov (United States)

    Jin, Li; Hongxia, Liu; Bin, Li; Lei, Cao; Bo, Yuan

    2010-08-01

    For the first time, a simple and accurate two-dimensional analytical model for the surface potential variation along the channel in fully depleted dual-material gate strained-Si-on-insulator (DMG SSOI) MOSFETs is developed. We investigate the improved short channel effect (SCE), hot carrier effect (HCE), drain-induced barrier-lowering (DIBL) and carrier transport efficiency for the novel structure MOSFET. The analytical model takes into account the effects of different metal gate lengths, work functions, the drain bias and Ge mole fraction in the relaxed SiGe buffer. The surface potential in the channel region exhibits a step potential, which can suppress SCE, HCE and DIBL. Also, strained-Si and SOI structure can improve the carrier transport efficiency, with strained-Si being particularly effective. Further, the threshold voltage model correctly predicts a “rollup" in threshold voltage with decreasing channel length ratios or Ge mole fraction in the relaxed SiGe buffer. The validity of the two-dimensional analytical model is verified using numerical simulations.

  6. How the Schmidt-Boelter gage really works

    International Nuclear Information System (INIS)

    Kidd, C.T.; Nelson, C.G.

    1995-01-01

    The Schmidt-Boelter gage is but one version of a proven heat flux measurement concept generally referred to as the axial temperature gradient method. This gage has been used since the mid-1950's and has gained wide acceptance because the transducer provides a high-level, self-generating output signal directly proportional to the heat flux incident upon the sensing surface. Utilization of this transducer in aerospace measurements since the late 1970's has broadened the scope of application of the device, but has raised questions concerning the proper interpretation of the results. The principle of operation of the gage can correctly be divided into two distinct categories-the thermal and thermoelectric functions. The thermal response of the gage can be approximated by simple steady-state equations. But due to the number of different materials required in the construction of the gage, the transient temperature and heat conduction in gage members are more accurately characterized by finite-element thermal analysis techniques. Results of these analyses are presented in graphical format in the paper. Thermoelectric characteristics of the gage are accurately defined by basic principles of thermoelectric thermometry. Altogether, the analyses presented in this paper demonstrate how this transducer actually works. The conclusions presented herein may be different than opinions held by most casual users regarding gage operation. Results of limited laboratory experiments which support the analyses are described and presented

  7. Ball mounting fixture for a roundness gage

    Science.gov (United States)

    Gauler, Allen L.; Pasieka, Donald F.

    1983-01-01

    A ball mounting fixture for a roundness gage is disclosed. The fixture includes a pair of chuck assemblies oriented substantially transversely with respect to one another and mounted on a common base. Each chuck assembly preferably includes a rotary stage and a wobble plate affixed thereto. A ball chuck affixed to each wobble plate is operable to selectively support a ball to be measured for roundness, with the wobble plate permitting the ball chuck to be tilted to center the ball on the axis of rotation of the rotary stage. In a preferred embodiment, each chuck assembly includes a vacuum chuck operable to selectively support the ball to be measured for roundness. The mounting fixture enables a series of roundness measurements to be taken with a conventional rotating gagehead roundness instrument, which measurements can be utilized to determine the sphericity of the ball.

  8. Comparison of Ruska and Rosemont pressure gages (U)

    International Nuclear Information System (INIS)

    Harvel, C.D.

    1991-01-01

    This paper reports that a 150,000 gallon tank was calibrated during the months of May and July of 1990. Six calibration runs were completed. Ruska and Rosemont pressure gages were installed to make in-tank liquid level measurements during the calibration process. A flow meter was used to measure the incremental volumes of water added to or removed from the tank. The Ruska and Rosemont gages were compared to determine the gage best suited for tank operation. One comparison criteria was the tolerance limits of error (LOE) for the predicted standardized in-tank volumes. For accountability purposes, the effects of the two gages on the LOE for the predicted inventory of U-235 were evaluated. The most important comparison criteria was the gage's contribution to the U-235 inventory LOE. The choice of which gage to use depends on the other measurement methods used for material accountability. The contributions to the inventory LOE were evaluated for two in-tank liquid level measurement methods, two concentration measurement methods, and one isotopic measurement method. The results indicate the Ruska pressure gage is best suited for tank operation only if the best concentration measurement method is used

  9. The role of GAGE cancer/testis antigen in metastasis

    DEFF Research Database (Denmark)

    Gjerstorff, Morten Frier; Terp, Mikkel Green; Hansen, Malene Bredahl

    2016-01-01

    with migratory and invasive properties and were found to be upregulated in cancer cells with metastasizing potential in a gastric cancer model. METHODS: We have addressed the direct role of GAGE proteins in supporting metastasis using an isogenic metastasis model of human cancer, consisting of 4 isogenic cell......) and moderately metastatic clones (LM3), stable downregulation of GAGE expression did not affect the ability of CL16 cells to establish primary tumors and form metastasis in the lungs of immunodeficient mice. CONCLUSIONS: These results suggest that GAGE proteins per se do not support metastasis and that further...

  10. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  11. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  12. Vision system for dial gage torque wrench calibration

    Science.gov (United States)

    Aggarwal, Neelam; Doiron, Theodore D.; Sanghera, Paramjeet S.

    1993-11-01

    In this paper, we present the development of a fast and robust vision system which, in conjunction with the Dial Gage Calibration system developed by AKO Inc., will be used by the U.S. Army in calibrating dial gage torque wrenches. The vision system detects the change in the angular position of the dial pointer in a dial gage. The angular change is proportional to the applied torque. The input to the system is a sequence of images of the torque wrench dial gage taken at different dial pointer positions. The system then reports the angular difference between the different positions. The primary components of this vision system include modules for image acquisition, linear feature extraction and angle measurements. For each of these modules, several techniques were evaluated and the most applicable one was selected. This system has numerous other applications like vision systems to read and calibrate analog instruments.

  13. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  14. Restriction of GAGE protein expression to subpopulations of cancer cells is independent of genotype and may limit the use of GAGE proteins as targets for cancer immunotherapy

    DEFF Research Database (Denmark)

    Gjerstorff, M F; Johansen, L E; Nielsen, O

    2006-01-01

    The GAGE cancer testis antigen gene family encodes products that can be recognized by autologous T cells, and GAGE proteins have been suggested as potential targets for cancer immunotherapy. Analysis of GAGE expression in tumours has primarily been performed at the level of gene transcription, wh...

  15. Measurement of aerosol concentration with a beta-ray gage

    International Nuclear Information System (INIS)

    Auzac, G. d'; Dubillot, J.

    1978-01-01

    Because dusts in suspension are a dangerous polluting agent, several methods have been used to monitor their concentration. Among these, the beta-ray gage enjoys a privileged position. The authors describe such a gage and discuss the conditions to be observed for it to be capable of giving results comparable to those obtained with manual gravimetric methods. The satisfactory results obtained led to standardization of the method and a whole range of instruments based on this principle are employed in pollution supervising networks and for continuously monitoring industrial emissions [fr

  16. Development and application of the variable focus laser leveling gage

    International Nuclear Information System (INIS)

    Gong Kun; Ma Jinglong

    2005-01-01

    The variable focus laser leveling gage was developed. The performance and structure were introduced. The several alignments and tests in KrF laser angle multi-path optical system were accomplished with them. Its application in other optical equipment was discussed too. (author)

  17. Latin-square three-dimensional gage master

    Science.gov (United States)

    Jones, L.

    1981-05-12

    A gage master for coordinate measuring machines has an nxn array of objects distributed in the Z coordinate utilizing the concept of a Latin square experimental design. Using analysis of variance techniques, the invention may be used to identify sources of error in machine geometry and quantify machine accuracy.

  18. 49 CFR 213.110 - Gage restraint measurement systems.

    Science.gov (United States)

    2010-10-01

    ... requirements specified in §§ 213.109 and 213.127. (5) If the PTLF becomes non-functional or is missing, the... and fastener requirements specified in §§ 213.109 and 213.127 provided that— (1) The track owner... the minimum design requirements of a GRMS vehicle which specify that— (1) Gage restraint shall be...

  19. Testing for moisture content in foods by neutron gaging

    International Nuclear Information System (INIS)

    Helf, S.

    1976-01-01

    Neutron gaging was applied to the testing for moisture content in bulk powdered foods and in canned Army field rations. The technique is based on the moderation or thermalization of fast neutrons by hydrogenous matter and the measurement of thermal neutron intensity as a function of moisture content. A small californium-252 capsule, of approximate output 10 7 neutrons per second, was used as the source of fast neutrons. It is concluded that a fast neutron moderation technique is feasible for the nondestructive measurement or control of moisture or both in near-dry bulk powdered foods. Samples must be measured under identical geometric conditions, that is, uniform bulk density and volume using a standard metal container or cell. For canned or otherwise prepacked rations, measurement of moisture is interfered with by variations in fill weight among cans or packages of the same product. A gamma-ray attenuation gaging method proved to be of insufficient sensitivity to correct for fill weight variation and was further complicated by nonuniformity in can wall dimensions. Neutron gaging, however, appears to be quite useful for monitoring a standard packaged item for fill weight since the neutron signal is virtually unaffected by variations in container dimensions. The radiation dose imparted to a sample or package of food subjected to such a test is judged to pose no threat to humans from subsequent consumption of the food. An estimate is given for the cost range of a commercial neutron gage and of encapsulated radioisotopic neutron sources

  20. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  1. Development of piping strain sensor for stress evaluation

    International Nuclear Information System (INIS)

    Takahama, Tsunemichi; Nishimura, Kazuma; Ninomiya, Seiichiro; Matsumoto, Yoshihiro; Harada, Yutaka

    2014-01-01

    In a small diameter piping, stresses are generated due to internal fluid or pump vibrations especially around the welding parts. Authors have successfully developed a pipe strain sensor which is able to measure such stresses. Unlike conventional methods using strain gages and adhesive bond, the sensor can measure the strain without putting adhesive bond on the piping surface. However, the strain sensor can provide measurements with a level of accuracy equivalent to that of conventional method using strain gages and adhesive bond. Accordingly, the strain sensor can significantly reduce the working time without any loss of the measurement accuracy. (author)

  2. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  3. Polymer film strain gauges for measuring large elongations

    Science.gov (United States)

    Kondratov, A. P.; Zueva, A. M.; Varakin, R. S.; Taranec, I. P.; Savenkova, I. A.

    2018-02-01

    The paper shows the possibility to print polymer strain gages, microstrip lines, coplanar waveguides, and other prints for avionics using printing technology and equipment. The methods of screen and inkjet printing have been complemented by three new operations of preparing print films for application of an electrically conductive ink layer. Such additional operations make it possible to enhance the conductive ink layer adhesion to the film and to manufacture strain gages for measuring large elongations.

  4. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  5. Skin-friction measurements with hot-wire gages

    Science.gov (United States)

    Houdeville, R.; Juillen, J. C.; Cousteix, J.

    1983-11-01

    The development of two hot-wire gauges for implantation in wind-tunnel models and their application to the measurement of skin-friction phenomena are reported. The measurement principle is explained; the design and calibration of a single-wire gage containing a thermocouple for temperature determination (Cousteix and Juillen, 1982-1983) are summarized; and sample results for 2D and 3D flows with positive pressure gradients are shown. An advanced design employing a thin hot film deposited on an 80-micron-diameter quartz fiber extending into a 1-mm-sq 0.8-mm-deep cavity is characterized and demonstrated on a pulsed flow on a flat plate, Tollmien-Schlichting waves, and a turbulent boundary layer. Two cold-wire temperature sensors are added to this gage to permit detection of the skin of the skin friction in the separated flow over a cylinder.

  6. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  7. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  8. Measurement of strains at high temperatures by means of electro-optics holography

    Science.gov (United States)

    Sciammarella, Cesar A.; Bhat, G.; Vaitekunas, Jeffrey

    Electro-optics holographic-moire interferometry is used to measure strains at temperatures up to 1000 C. A description of the instrumentation developed to carry out the measurements is given. The data processing technique is also explained. Main problems encountered in recording patterns at high temperatures are analyzed and possible solutions are outlined. Optical results are compared with strain gage values obtained with instrumented specimens and with theoretical results. Very good agreement is found between optical, strain gage and theoretical results.

  9. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  10. Near Net Manufacturing Using Thin Gage Friction Stir Welding

    Science.gov (United States)

    Takeshita, Jennifer; Potter, David; Holquin, Michael

    2006-01-01

    Friction Stir Welding (FSW) and near net spin forming of FSW aluminumn blanks were investigated for large-scale pressure vessel applications. With a specific focus on very thin gage 2xxx and 7xxx aluminum alloys, the program concentrated on the following: the criteria used for material selection, a potential manufacturing flow, and the effectiveness and associated risks of near net spin forming. Discussion will include the mechanical properties of the friction stir welds and the parent material from before and after the spin forming process. This effort was performed under a NASA Space Exploration initiative focused on increasing the affordability, reliability and performance of pressure vessels larger than 10 ft. diameter.

  11. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  12. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  13. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  14. Electronic Properties of III-V Semiconductors under [111] Uniaxial Strain; a Tight-Binding Approach: I. Arsenides and Gallium Phosphide

    Directory of Open Access Journals (Sweden)

    Miguel E. Mora-Ramos

    2009-01-01

    Full Text Available Empleando un esquema de cálculo tight-binding que usa una base de orbitales sp3s*d5, se estudian propiedades de la estructura electrónica de un grupo de materiales semiconductores IIIV los cuales son de notable interés para la tecnología de dispositivos electrónicos y optoelectrónicos. En específico, se analiza la influencia sobre estas propiedades de una tensión aplicada según la dirección cristalográfica [111], haciendo uso de una formulación basada en la teoría de la elasticidad para establecer las posiciones relativas de los iones vecinos más próximos. Especial atención se presta a la inclusión del efecto de deformación interna de la red cristalina. Para cada material de los estudiados presentamos las dependencias de las brechas energéticas asociadas a los puntos L, X y L de la zona de Brillouin como funciones de la tensión uniaxial en AlAs, GaAs, InAs y GaP. Asimismo, reportamos expresiones de ajuste para los valores de las masas efectivas de conducción en esos cuatro materiales. La comparación de la variación de la brecha de energía en X para el GaP, calculada con nuestro modelo, y recientes resultados experimentales para la transición indirecta entre la banda de huecos pesados y la banda X de conducción arroja una muy buena concordancia.

  15. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  16. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  17. CIVAC CV-01 type pressure gage for middle vacuum pumps

    International Nuclear Information System (INIS)

    Olaru, Grigore; Aculai, Agustin

    1997-01-01

    The digital display pressure gage CIVAC CV-01 measures absolute pressures in vacuum range of 10 2 - 10 -3 mbar in any installation or equipment generating or using low pressures. It uses a transducer type PIRANI, model TR-02. It is a portable device, easy to exploit and handle. It is applied in research, chemistry, metallurgical industry, mechanical engineering. The system of coupling the transducer to the enclosure where the pressure is to be measured is of type ISO-PNEUROP with flange, collar and adjusting ring with a DN 25 ring gasket. The technical and functional features are: - Measuring error: ± 35% of real conventional value ; - Response time: 20 ms; - Number of measuring points: 1; - Output signal: 0 - 10 V d.c.; - Repeatability error: 5%; - Max weight: 1,600 Kg; Size: 91 x 117 x 187 mm. (authors)

  18. Operation of a nuclear test gage at low multiplications

    International Nuclear Information System (INIS)

    Baumann, N.P.

    1977-01-01

    The Nuclear Test Gage (NTG) at the Savannah River Plant is a subcritical multiplying facility (low k) with H 2 O moderator and 2.54-cm-diameter fuel slugs of 5 wt percent 235 U in aluminum alloy at a 4.285-cm triangular pitch. The core of the facility is 61-cm long with a normal diameter of 27 cm. The NTG is used for quality control of reactor components, such as 235 U-Al fuel tubes, Li--Al target tubes, control and safety rods, and miscellaneous special irradiation elements. A component is tested by passing it through an axial test port 11.63 cm in diameter. The ion chamber response from the resultant change in neutron source multiplication is then compared with corresponding responses from known standards

  19. Soil moisture determination with Tesla NZK 203 neutron gage

    International Nuclear Information System (INIS)

    Hally, J.

    1977-01-01

    Soil moisture was measured using the NZK 203 neutron probe manufactured by Tesla Premysleni. The individual measuring sites were spaced at a distance of 100 m. The NZK 203 set consists of a NPK 202 moisture gage and a NSK 301 scintillation detector and features the following specifications: moisture density measuring range 20 to 500 kg/m 3 , 241 Am-Be fast neutron source having a neutron flux of 7.5x10 4 n.sec -1 +-10%, operating temperature -10 to +45 degC. The measured counting rate was primarily affected by the statistical fluctuation of ionizing radiation and by instrument instability. In order that these effects should be limited each measurement was repeated 10 times with the optimum measurement time at an interval of 20 to 100 sec. The NZK 203 Tesla set was proven to be suitable for rapid and reproducible determination of moisture profiles. (J.P.)

  20. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  1. Geoscience Workforce Development at UNAVCO: Leveraging the NSF GAGE Facility

    Science.gov (United States)

    Morris, A. R.; Charlevoix, D. J.; Miller, M.

    2013-12-01

    Global economic development demands that the United States remain competitive in the STEM fields, and developing a forward-looking and well-trained geoscience workforce is imperative. According to the Bureau of Labor Statistics, the geosciences will experience a growth of 19% by 2016. Fifty percent of the current geoscience workforce is within 10-15 years of retirement, and as a result, the U.S. is facing a gap between the supply of prepared geoscientists and the demand for well-trained labor. Barring aggressive intervention, the imbalance in the geoscience workforce will continue to grow, leaving the increased demand unmet. UNAVCO, Inc. is well situated to prepare undergraduate students for placement in geoscience technical positions and advanced graduate study. UNAVCO is a university-governed consortium facilitating research and education in the geosciences and in addition UNAVCO manages the NSF Geodesy Advancing Geosciences and EarthScope (GAGE) facility. The GAGE facility supports many facets of geoscience research including instrumentation and infrastructure, data analysis, cyberinfrastructure, and broader impacts. UNAVCO supports the Research Experiences in the Solid Earth Sciences for Students (RESESS), an NSF-funded multiyear geoscience research internship, community support, and professional development program. The primary goal of the RESESS program is to increase the number of historically underrepresented students entering graduate school in the geosciences. RESESS has met with high success in the first 9 years of the program, as more than 75% of RESESS alumni are currently in Master's and PhD programs across the U.S. Building upon the successes of RESESS, UNAVCO is launching a comprehensive workforce development program that will network underrepresented groups in the geosciences to research and opportunities throughout the geosciences. This presentation will focus on the successes of the RESESS program and plans to expand on this success with broader

  2. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  3. Standard Test Method for Measuring Heat Flux Using Flush-Mounted Insert Temperature-Gradient Gages

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2009-01-01

    1.1 This test method describes the measurement of the net heat flux normal to a surface using gages inserted flush with the surface. The geometry is the same as heat-flux gages covered by Test Method E 511, but the measurement principle is different. The gages covered by this standard all use a measurement of the temperature gradient normal to the surface to determine the heat that is exchanged to or from the surface. Although in a majority of cases the net heat flux is to the surface, the gages operate by the same principles for heat transfer in either direction. 1.2 This general test method is quite broad in its field of application, size and construction. Two different gage types that are commercially available are described in detail in later sections as examples. A summary of common heat-flux gages is given by Diller (1). Applications include both radiation and convection heat transfer. The gages used for aerospace applications are generally small (0.155 to 1.27 cm diameter), have a fast time response ...

  4. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  5. The Physics of Semiconductors An Introduction Including Devices and Nanophysics

    CERN Document Server

    Grundmann, Marius

    2006-01-01

    The Physics of Semiconductors provides material for a comprehensive upper-level-undergrauate and graduate course on the subject, guiding readers to the point where they can choose a special topic and begin supervised research. The textbook provides a balance between essential aspects of solid-state and semiconductor physics, on the one hand, and the principles of various semiconductor devices and their applications in electronic and photonic devices, on the other. It highlights many practical aspects of semiconductors such as alloys, strain, heterostructures, nanostructures, that are necessary in modern semiconductor research but typically omitted in textbooks. For the interested reader some additional advanced topics are included, such as Bragg mirrors, resonators, polarized and magnetic semiconductors are included. Also supplied are explicit formulas for many results, to support better understanding. The Physics of Semiconductors requires little or no prior knowledge of solid-state physics and evolved from ...

  6. United States Geological Survey discharge data from five example gages on intermittent streams

    Data.gov (United States)

    U.S. Environmental Protection Agency — The data are mean daily discharge data at United States Geological Survey gages. Once column provides the date (mm/dd/yyyy) and the other column provides the mean...

  7. An introduction to NH-A neutron earth base moisture gage

    International Nuclear Information System (INIS)

    Zhu Huaian; Jiang Yulan; Yin Xilin; Yu Peiying; Luo Pinjie

    1988-01-01

    NH-A neutron earth base moisture gage is an accurate instrument which can measure earth moisture rapidly and non-destructively and display moisture results immediately. The deviation is estimated at ±0.012g/cm

  8. Portable neutron moisture gage for the moisture determination of structure parts

    International Nuclear Information System (INIS)

    Harnisch, M.

    1985-01-01

    For determining the moisture of structure parts during building or before repairing a portable neutron moisture gage consisting of a neutron probe and pulse analyzer has been developed. The measuring process, calibration, and prerequisites of application are briefly discussed

  9. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  10. Standard test method for determining residual stresses by the hole-drilling strain-gage method

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2008-01-01

    1.1 Residual Stress Determination: 1.1.1 This test method specifies a hole-drilling procedure for determining residual stress profiles near the surface of an isotropic linearly elastic material. The test method is applicable to residual stress profile determinations where in-plane stress gradients are small. The stresses may remain approximately constant with depth (“uniform” stresses) or they may vary significantly with depth (“non-uniform” stresses). The measured workpiece may be “thin” with thickness much less than the diameter of the drilled hole or “thick” with thickness much greater than the diameter of the drilled hole. Only uniform stress measurements are specified for thin workpieces, while both uniform and non-uniform stress measurements are specified for thick workpieces. 1.2 Stress Measurement Range: 1.2.1 The hole-drilling method can identify in-plane residual stresses near the measured surface of the workpiece material. The method gives localized measurements that indicate the...

  11. Development of Displacement Gages Exposed to Solid Rocket Motor Internal Environments

    Science.gov (United States)

    Bolton, D. E.; Cook, D. J.

    2003-01-01

    The Space Shuttle Reusable Solid Rocket Motor (RSRM) has three non-vented segment-to-segment case field joints. These joints use an interference fit J-joint that is bonded at assembly with a Pressure Sensitive Adhesive (PSA) inboard of redundant O-ring seals. Full-scale motor and sub-scale test article experience has shown that the ability to preclude gas leakage past the J-joint is a function of PSA type, joint moisture from pre-assembly humidity exposure, and the magnitude of joint displacement during motor operation. To more accurately determine the axial displacements at the J-joints, two thermally durable displacement gages (one mechanical and one electrical) were designed and developed. The mechanical displacement gage concept was generated first as a non-electrical, self-contained gage to capture the maximum magnitude of the J-joint motion. When it became feasible, the electrical displacement gage concept was generated second as a real-time linear displacement gage. Both of these gages were refined in development testing that included hot internal solid rocket motor environments and simulated vibration environments. As a result of this gage development effort, joint motions have been measured in static fired RSRM J-joints where intentional venting was produced (Flight Support Motor #8, FSM-8) and nominal non-vented behavior occurred (FSM-9 and FSM-10). This data gives new insight into the nominal characteristics of the three case J-joint positions (forward, center and aft) and characteristics of some case J-joints that became vented during motor operation. The data supports previous structural model predictions. These gages will also be useful in evaluating J-joint motion differences in a five-segment Space Shuttle solid rocket motor.

  12. Design of Gages for Direct Skin Friction Measurements in Complex Turbulent Flows with Shock Impingement Compensation

    Science.gov (United States)

    2007-06-07

    100 kW/m2 for 0.1 s. Along with the material change, an oil leak problem required a geometric change. Initially, we considered TIG welding or...shear and moment, is addressed through the design, development, and testing of the CF1 and CF2 gages. Chapter 3 presents the evolutionary process ...a shock. Chapter 4 examines the performance of each gage to the nominal load conditions. Through this process , objective 2 is met. The best

  13. Room-temperature ductile inorganic semiconductor

    Science.gov (United States)

    Shi, Xun; Chen, Hongyi; Hao, Feng; Liu, Ruiheng; Wang, Tuo; Qiu, Pengfei; Burkhardt, Ulrich; Grin, Yuri; Chen, Lidong

    2018-05-01

    Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic α-Ag2S semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver-silver and sulfur-silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.

  14. Strain expansion-reduction approach

    Science.gov (United States)

    Baqersad, Javad; Bharadwaj, Kedar

    2018-02-01

    Validating numerical models are one of the main aspects of engineering design. However, correlating million degrees of freedom of numerical models to the few degrees of freedom of test models is challenging. Reduction/expansion approaches have been traditionally used to match these degrees of freedom. However, the conventional reduction/expansion approaches are only limited to displacement, velocity or acceleration data. While in many cases only strain data are accessible (e.g. when a structure is monitored using strain-gages), the conventional approaches are not capable of expanding strain data. To bridge this gap, the current paper outlines a reduction/expansion technique to reduce/expand strain data. In the proposed approach, strain mode shapes of a structure are extracted using the finite element method or the digital image correlation technique. The strain mode shapes are used to generate a transformation matrix that can expand the limited set of measurement data. The proposed approach can be used to correlate experimental and analytical strain data. Furthermore, the proposed technique can be used to expand real-time operating data for structural health monitoring (SHM). In order to verify the accuracy of the approach, the proposed technique was used to expand the limited set of real-time operating data in a numerical model of a cantilever beam subjected to various types of excitations. The proposed technique was also applied to expand real-time operating data measured using a few strain gages mounted to an aluminum beam. It was shown that the proposed approach can effectively expand the strain data at limited locations to accurately predict the strain at locations where no sensors were placed.

  15. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  16. Expression, purification and characterization of the cancer-germline antigen GAGE12I: a candidate for cancer immunotherapy

    DEFF Research Database (Denmark)

    Gjerstorff, Morten F; Besir, Hüseyin; Larsen, Martin R

    2010-01-01

    GAGE cancer-germline antigens are frequently expressed in a broad range of different cancers, while their expression in normal tissues is limited to the germ cells of the immune privileged organs, testis and ovary. GAGE proteins are immunogenic in humans, which make them promising targets...... for immunotherapy and candidates for cancer vaccines. Recombinant proteins may be superior to peptides as immunogens, since they have the potential to prime both CD4(+) and CD8(+) T cells and are not dependent on patient HLA-type. We have developed a method for production of highly pure recombinant GAGE12I...... filtration and formaldehyde cross-linking indicated that GAGE12I forms tetramers. The purified recombinant GAGE12I represents a candidate molecule for vaccination of cancer patients and will form the basis for further structural analysis of GAGE proteins....

  17. GAGE cancer-germline antigens bind DNA and are recruited to the nuclear envelope by Germ cell-less

    DEFF Research Database (Denmark)

    Gjerstorff, Morten; Rösner, Heike; Pedersen, Christina Bøg

    GAGE genes encode a highly similar, primate-specific protein family with unique primary structure and undefined roles in germ cells, various fetal cells and cancer cells. We report that GAGE proteins are intrinsically disordered proteins that provide novel interfaces between chromatin and the nuc......GAGE genes encode a highly similar, primate-specific protein family with unique primary structure and undefined roles in germ cells, various fetal cells and cancer cells. We report that GAGE proteins are intrinsically disordered proteins that provide novel interfaces between chromatin...... and the nuclear envelope. Structural analysis by NMR and CD spectroscopy showed GAGE proteins lack distinct secondary or tertiary structure and are therefore intrinsically disordered. In normal cells and cancer cells GAGE proteins localize predominantly in the nucleus; we found GAGE proteins formed stable......) at the nuclear envelope. Furthermore, exogenous and endogenous GAGE proteins were recruited to the nuclear envelope in GCL-overexpressing cells. Gene expression analysis and immunohistochemical staining suggest GAGE proteins and GCL interact physiologically in human cells that express both, including male germ...

  18. Strain measurement on a compact nuclear reactor steam generator

    International Nuclear Information System (INIS)

    Scaldaferri, Denis Henrique Bianchi; Gomes, Paulo de Tarso Vida; Mansur, Tanius Rodrigues; Pozzo, Renato del; Mola, Jairo

    2011-01-01

    This work presents the strain measurement procedures applied to a compact nuclear reactor steam generator, during a hydrostatic test, using strain gage technology. The test was divided in two steps: primary side test and secondary side test. In the primary side test twelve points for strain measurement using rectangular rosettes, three points (two external and one internal) for temperature measurement using special strain gages and one point for pressure measurement using a pressure transducer were monitored. In the secondary side test 18 points for strain measurement using rectangular rosettes, four points (two external and two internal) for temperature measurement using special strain gages and one point for pressure measurement using a pressure transducer were monitored. The measurement points on both internal and external pressurizer walls were established from pre-calculated stress distribution by means of numerical approach (finite elements modeling). Strain values using a quarter Wheatstone bridge circuit were obtained. Stress values, from experimental strain were determined, and to numerical calculation results were compared. (author)

  19. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  20. Fast recovery strain measurements in a nuclear test environment

    International Nuclear Information System (INIS)

    Kitchen, W.R.; Nauman, W.J.; Vollmer, D.W.

    1979-01-01

    The recovery of early-time (50 μs or less) strain gage data on structural response experiments in underground nuclear tests has been a continuing problem for experimenters at the Nevada Test Site. Strain measurement is one of the primary techniques used to obtain experimental data for model verification and correlation with predicted effects. Peak strains generally occur within 50 to 100 μs of the radiation exposure. Associated with the exposure is an intense electromagnetic impulse that produces potentials of kilovolts and currents of kiloamperes on the experimental structures. For successful operation, the transducer and associated recording system must recover from the initial noise overload and accurately track the strain response within about 50 μs of the nuclear detonation. A gaging and fielding technique and a recording system design that together accomplish these objectives are described. Areas discussed include: (1) noise source model; (2) experimental cassette design, gage application, grounding, and shielding; (3) cable design and shielding between gage and recorder; (4) recorder design including signal conditioner/amplifier, digital encoder, buffer memory, and uphole data transmission; and (5) samples of experimental data

  1. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  2. Cost-effectiveness of the stream-gaging program in Maine; a prototype for nationwide implementation

    Science.gov (United States)

    Fontaine, Richard A.; Moss, M.E.; Smath, J.A.; Thomas, W.O.

    1984-01-01

    This report documents the results of a cost-effectiveness study of the stream-gaging program in Maine. Data uses and funding sources were identified for the 51 continuous stream gages currently being operated in Maine with a budget of $211,000. Three stream gages were identified as producing data no longer sufficiently needed to warrant continuing their operation. Operation of these stations should be discontinued. Data collected at three other stations were identified as having uses specific only to short-term studies; it is recommended that these stations be discontinued at the end of the data-collection phases of the studies. The remaining 45 stations should be maintained in the program for the foreseeable future. The current policy for operation of the 45-station program would require a budget of $180,300 per year. The average standard error of estimation of streamflow records is 17.7 percent. It was shown that this overall level of accuracy at the 45 sites could be maintained with a budget of approximately $170,000 if resources were redistributed among the gages. A minimum budget of $155,000 is required to operate the 45-gage program; a smaller budget would not permit proper service and maintenance of the gages and recorders. At the minimum budget, the average standard error is 25.1 percent. The maximum budget analyzed was $350,000, which resulted in an average standard error of 8.7 percent. Large parts of Maine's interior were identified as having sparse streamflow data. It was determined that this sparsity be remedied as funds become available.

  3. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  4. Behavior of porous beryllium under thermomechanical loading. Part 7. Calibration studies on the carbon piezoresistive gage

    International Nuclear Information System (INIS)

    Horning, R.R.; Isbell, W.M.

    1975-01-01

    The calibrations, time responses, and Hugoniot for carbon piezoresistive gages from two manufacturers are presented. These gages exhibit a high sensitivity of about --20 percent resistance change per GPa at 0.5 GPa. Their equilibrium times, when tested in fused silica, exceed 0.6 μs below 0.5 GPa but improve at higher stresses and under better impedance matching conditions. They can be made of low atomic number materials, making them interesting candidates for studying the mechanical responses of materials to electron and x-ray deposition. (U.S.)

  5. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  6. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  7. GAGE cancer-germline antigens are recruited to the nuclear envelope by germ cell-less (GCL)

    DEFF Research Database (Denmark)

    Gjerstorff, Morten F; Rösner, Heike I; Pedersen, Christina B

    2012-01-01

    GAGE proteins are highly similar, primate-specific molecules with unique primary structure and undefined cellular roles. They are restricted to cells of the germ line in adult healthy individuals, but are broadly expressed in a wide range of cancers. In a yeast two-hybrid screen we identified the...... different dsDNA fragments, suggesting sequence-nonspecific binding. Dual association of GAGE family members with GCL at the nuclear envelope inner membrane in cells, and with dsDNA in vitro, implicate GAGE proteins in chromatin regulation in germ cells and cancer cells....... the metazoan transcriptional regulator, Germ cell-less (GCL), as an interaction partner of GAGE12I. GCL directly binds LEM-domain proteins (LAP2β, emerin, MAN1) at the nuclear envelope, and we found that GAGE proteins were recruited to the nuclear envelope inner membrane by GCL. Based on yeast two...

  8. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  9. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  10. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  11. Arrangement for correcting values measured by mass per unit area or thickness gages

    International Nuclear Information System (INIS)

    Volger, G.; Sandke, E.; Heinz, P.

    1985-01-01

    The described arrangement can be applied to gaged making use of beta radiation and of a protective screen for shielding the radiation source and the ionization chamber of the measuring instrument. It has been aimed at counterbalancing measuring inaccuracies caused by temperature fluctuations in the measuring slot

  12. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  13. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  14. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  15. Data acquisition from vacuum gage controlled by RS-232 standard using LabVIEW

    International Nuclear Information System (INIS)

    Brandea, Iulian; Culcer, Mihai; Steflea, Dumitru

    1999-01-01

    This paper deals with the problem of connecting a microcontroller-based vacuum gage to a personal computer, using the RS-232 hardware standard and the software LabVIEW and his collection of virtual instruments from National Instruments. To solve the problem an instrument driver was created. This provided the customer with a perfect solution for the remote control and data acquisition from an Intel 80CXX microcontroller-based vacuum gage. The remote control making use of an IBM-PC was design and manufactured in our institute. In order to make it intelligent the device was provided with a microprocessor or a microcontroller. To fulfill the requirements a vacuum gage with an 80C31 microcontroller and two Bayard-Alpert ion gauges, for very low pressures (10 -3 to 10 -7 mbar) and low pressure (10 mbar to 10 -3 mbar) was built. Because this microcontroller has a built-in circuitry for a serial communication, we established a serial communication between the PC (Pentium -166 MHz) and the vacuum gage, according to the RS-232 hardware standard. Optimum selection of software development tools however, was not as straightforward. Most producers use the C/C ++ - language programming tool for developing instrument drivers for their intelligent devices. One of the advantages of C/C ++ is its speed, but the compilation and the high-level skill required for optimum programming do not fit well with some requirements, particularly those of versatility, upgradability and user friendliness. After careful evaluation of several options, a final decision was to develop a hybrid software package using two different software development tools: LabVIEW, and assembly language. We chose LabVIEW because it is dedicated to data acquisition and communications, containing libraries for data collection, analysis, presentation and storage. The assembly language for Intel 8051's microcontrollers family is used to write the firmware for the vacuum gage and arithmetic routines. (authors)

  16. Standard guide for high-temperature static strain measurement

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    1998-01-01

    1.1 This guide covers the selection and application of strain gages for the measurement of static strain up to and including the temperature range from 425 to 650°C (800 to 1200°F). This guide reflects some current state-of-the-art techniques in high temperature strain measurement, and will be expanded and updated as new technology develops. 1.2 This practice assumes that the user is familiar with the use of bonded strain gages and associated signal conditioning and instrumentation as discussed in Refs. (1) and (2). The strain measuring systems described are those that have proven effective in the temperature range of interest and were available at the time of issue of this practice. It is not the intent of this practice to limit the user to one of the gage types described nor is it the intent to specify the type of system to be used for a specific application. However, in using any strain measuring system including those described, the proposer must be able to demonstrate the capability of the proposed sy...

  17. The physics of semiconductors an introduction including nanophysics and applications

    CERN Document Server

    Grundmann, Marius

    2016-01-01

    The 3rd edition of this successful textbook contains ample material for a comprehensive upper-level undergraduate or beginning graduate course, guiding readers to the point where they can choose a special topic and begin supervised research. The textbook provides a balance between essential aspects of solid-state and semiconductor physics, on the one hand, and the principles of various semiconductor devices and their applications in electronic and photonic devices, on the other. It highlights many practical aspects of semiconductors such as alloys, strain, heterostructures, nanostructures, that are necessary in modern semiconductor research but typically omitted in textbooks. Coverage also includes additional advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, carbon-based nanostructures and transparent conductive oxides. The text derives explicit formulas for many results to support better under...

  18. Longitudinally Jointed Edge-wise Compression Honeycomb Composite Sandwich Coupon Testing and FE Analysis: Three Methods of Strain Measurement, and Comparison

    Science.gov (United States)

    Farrokh, Babak; AbdulRahim, Nur Aida; Segal, Ken; Fan, Terry; Jones, Justin; Hodges, Ken; Mashni, Noah; Garg, Naman; Sang, Alex; Gifford, Dawn; hide

    2013-01-01

    Three means (i.e., typical foil strain gages, fiber optic sensors, and a digital image correlation (DIC) system) were implemented to measure strains on the back and front surfaces of a longitudinally jointed curved test article subjected to edge-wise compression testing, at NASA Goddard Space Flight Center, according to ASTM C364. The Pre-test finite element analysis (FEA) was conducted to assess ultimate failure load and predict strain distribution pattern throughout the test coupon. The predicted strain pattern contours were then utilized as guidelines for installing the strain measurement instrumentations. The strain gages and fiber optic sensors were bonded on the specimen at locations with nearly the same strain values, as close as possible to each other, so that, comparisons between the measured strains by strain gages and fiber optic sensors, as well as the DIC system are justified. The test article was loaded to failure (at approximately 38 kips), at the strain value of approximately 10,000mu epsilon As a part of this study, the validity of the measured strains by fiber optic sensors is examined against the strain gage and DIC data, and also will be compared with FEA predictions.

  19. An Experimental Technique for Developing Intermediate Strain Rates in Ductile Metals

    Science.gov (United States)

    2008-03-01

    detecting small changes is resistance [45]. Figure 2.11 shows a basic strain gage Wheatstone bridge circuit where R1, R2, R3, and R4 are individual resistors ...all of the resistances of the resistors and the strain gage in the bridge circuit are equal such that, R = R1 = R2 = R3 = R4 and the bridge is...piezoelectric material [45]. Figure 2.13 [45] shows a piezo - electric accelerometer configured such that a mass is threaded onto a post above a

  20. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  1. Introduction to Semiconductor Devices

    Science.gov (United States)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  2. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  3. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  4. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  5. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  6. Cost effective stream-gaging strategies for the Lower Colorado River basin; the Blythe field office operations

    Science.gov (United States)

    Moss, Marshall E.; Gilroy, Edward J.

    1980-01-01

    This report describes the theoretical developments and illustrates the applications of techniques that recently have been assembled to analyze the cost-effectiveness of federally funded stream-gaging activities in support of the Colorado River compact and subsequent adjudications. The cost effectiveness of 19 stream gages in terms of minimizing the sum of the variances of the errors of estimation of annual mean discharge is explored by means of a sequential-search optimization scheme. The search is conducted over a set of decision variables that describes the number of times that each gaging route is traveled in a year. A gage route is defined as the most expeditious circuit that is made from a field office to visit one or more stream gages and return to the office. The error variance is defined as a function of the frequency of visits to a gage by using optimal estimation theory. Currently a minimum of 12 visits per year is made to any gage. By changing to a six-visit minimum, the same total error variance can be attained for the 19 stations with a budget of 10% less than the current one. Other strategies are also explored. (USGS)

  7. Electronic properties of semiconductor surfaces and metal/semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Tallarida, M.

    2005-05-15

    This thesis reports investigations of the electronic properties of a semiconductor surface (silicon carbide), a reactive metal/semiconductor interface (manganese/silicon) and a non-reactive metal/semiconductor interface (aluminum-magnesium alloy/silicon). The (2 x 1) reconstruction of the 6H-SiC(0001) surface has been obtained by cleaving the sample along the (0001) direction. This reconstruction has not been observed up to now for this compound, and has been compared with those of similar elemental semiconductors of the fourth group of the periodic table. This comparison has been carried out by making use of photoemission spectroscopy, analyzing the core level shifts of both Si 2p and C 1s core levels in terms of charge transfer between atoms of both elements and in different chemical environments. From this comparison, a difference between the reconstruction on the Si-terminated and the C-terminated surface was established, due to the ionic nature of the Si-C bond. The growth of manganese films on Si(111) in the 1-5 ML thickness range has been studied by means of LEED, STM and photoemission spectroscopy. By the complementary use of these surface science techniques, two different phases have been observed for two thickness regimes (<1 ML and >1 ML), which exhibit a different electronic character. The two reconstructions, the (1 x 1)-phase and the ({radical}3 x {radical}3)R30 -phase, are due to silicide formation, as observed in core level spectroscopy. The growth proceeds via island formation in the monolayer regime, while the thicker films show flat layers interrupted by deep holes. On the basis of STM investigations, this growth mode has been attributed to strain due to lattice mismatch between the substrate and the silicide. Co-deposition of Al and Mg onto a Si(111) substrate at low temperature (100K) resulted in the formation of thin alloy films. By varying the relative content of both elements, the thin films exhibited different electronic properties

  8. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  9. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  10. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  11. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  12. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  13. New approach for calibration and interpretation of IRAD GAGE vibrating-wire stressmeters

    International Nuclear Information System (INIS)

    Mao, N.

    1986-05-01

    IRAD GAGE vibrating-wire stressmeters were installed in the Spent Fuel Facility at the Nevada Test Site to measure the change in in-situ stress during the Spent Fuel Test-Climax (SFT-C). This paper discusses the results of removing a cylindrical section of rock and gages as a unit through overcoring, and the subsequent post-test calibration of the stressmeters in the laboratory. The estimated in-situ stresses based on post test calibration data are quite consistent with those directly measured in nearby holes. The magnitude of stress change calculated from pre-test calibration data is generally much smaller than that estimated from post test calibration data. 11 refs., 5 figs., 2 tabs

  14. The Effect of Modeling Qualities, Tones and Gages in Ceramic Supply Chains' Master Planning

    Directory of Open Access Journals (Sweden)

    Isabel MUNDI

    2012-01-01

    Full Text Available Ceramic production processes are characterized by providing quantities of the same finished goods that differ in qualities, tones and gages. This aspect becomes a problem for ceramic supply chains (SCs that should promise and serve customer orders with homogeneous quantities of the same finished good. In this paper a mathematical programming model for the cen-tralized master planning of ceramic SC is proposed. Inputs to the master plan include demand forecasts in terms of customer order classes based on their order size and splitting percentages of a lot into homogeneous sub-lots. Then, the master plan defines the size and loading of lots to production lines and their distribution with the aim of maximizing the number of customer orders fulfilled with homogeneous quantities in the most efficient manner for the SC. Finally, the effect of modeling qualities, tones and gages in master planning is assessed.

  15. HydroCloud: A Web Application for Exploring Stream Gage Data

    Directory of Open Access Journals (Sweden)

    Martin C. Roberge

    2017-08-01

    Full Text Available HydroCloud (hydrocloud.org is a mobile-friendly web application for visually browsing hydrology data from multiple sources. Data providers such as the US Geological Survey (USGS and the German 'Wasserstraßen- und Schifffahrtsverwaltung des Bundes' (WSV currently serve stream discharge data from more than 10,000 stream gages around the world. HydroCloud allows users to plot these data while out in the field, while also providing contextual information such as the current NEXRAD weather imagery or descriptive information about the stream gage and its watershed. Additional features include a chat mechanism for contacting developers, and the use of local storage for saving data.   Funding Statement: This project was supported in part by a grant from the Towson University School of Emerging Technology.

  16. Application of the nuclear gages in dynamic sedimentology for the solid transport study

    International Nuclear Information System (INIS)

    Lamdasni, Y.

    1994-02-01

    The problems caused by the solid particle transport in rivers, dams, harbors, estuaries and in navigation channels have considerable economical consequences. The technical difficulties met when trying to limit or manage these problems are very important because of lack of knowledge. The nuclear gages and the radioactive tracers can be the measurement and monitoring means which, associated to the conventional techniques, permit to develop strongly the knowledge in the solid transport field. This report gives the modes of solid transport and the problems caused by these transports and exposes the physical properties of the fine sediments and their behavior under the hydrodynamic effects. In the same way, it deals with the theory of the nuclear gages, often applied in dynamic sedimentology and gives some examples of their applications. 29 refs., 35 figs., 5 tabs. (F.M.)

  17. Simulation of semiconductor devices

    International Nuclear Information System (INIS)

    Oriato, D.

    2001-09-01

    In this thesis a drift diffusion model coupled with self-consistent solutions of Poisson's and Schroedinger's equations, is developed and used to investigate the operation of Gunn diodes and GaN-based LEDs. The model also includes parameters derived from Monte Carlo calculations of the simulated devices. In this way the characteristics of a Monte Carlo approach and of a quantum solver are built into a fast and flexible drift-diffusion model that can be used for testing a large number of heterostructure designs in a time-effective way. The full model and its numerical implementation are described in chapter 2. In chapter 3 the theory of Gunn diodes is presented. A basic model of the dynamics of domain formation and domain transport is described with particular regard to accumulation and dipole domains. Several modes of operation of the Gunn device are described, varying from the resonance mode to the quenched mode. Details about transferred electron devices and negative differential resistance in semiconductor materials are given. In chapter 4 results from the simulation of a simple conventional gunn device confirm the importance of the doping condition at the cathode. Accumulation or dipole domains are achieved respectively with high and low doping densities. The limits of a conventional Gunn diode are explained and solved by introducing the heterostructure Gunn diode. This new design consists of a conventional GaAs transit region coupled with an electron launcher at the cathode, made using an AIGaAs heterostructure step. Simulations show the importance of the insertion of a thin highly-doped layer between the transit region and the electron launcher in order to improve device operation. Chapter 5 is an introduction to Ill-nitrides, in particular GaN and its alloy ln-GaN. We outline the discrepancy in the elastic and piezoelectric parameters found in the literature. Strain, dislocations and piezoelectricity are presented as the main features of a InGaN/GaN system

  18. Low Cost Stream Gaging through Analysis of Stage Height Using Digital Photography

    Science.gov (United States)

    Mui, C. K.; Royem, A. A.; Walter, M. T.

    2010-12-01

    Through the middle of the twentieth century, the US was relatively rich in active streamflow gages. Over the past four decades, the number of gages has decreased by approximately 10% (approx. 20 gages a year) and it is likely this trend will continue for the foreseeable future. Not only are streaflow data valuable for water resources planning and management, but they are invaluable for assessing how land use and climate changes are impacting the environment. Affordable, easy-to-use systems need to be developed to enable a wider community to establish and maintain streamflow observation sites. Currently USGS-like gauges cost 30,000 to 50,000 to build and $6,000/year to maintain. We are developing a system that uses digital images in conjunction with MATLAB for image post processing that has the potential to both accurately and cost effectively monitor stream gauge. We explored several different staff gauge designs in conjunction with associated image processing code. The most robust design so far consists of a brightly colored metal staff gauge and and code that allows a point-and-click method for training the image processing code to correctly identify the staff. We ultimately envision a system in which users can upload their images via the Internet and post-processing is done on a remote server, which also collates data and metadata for open-access downloading.

  19. Lower-energy neutron sources for increasing the sensitivity of nuclear gages for measuring the water content of bulk materials

    International Nuclear Information System (INIS)

    Bailey, S.M.

    1977-01-01

    The sensitivity of a gage using a nuclear source for measuring the water content of bulk materials, such as plastic concrete, is increased by use of a lithium or fluorine neutron nuclear source. 3 figures

  20. A self-strain feedback tuning-fork-shaped ionic polymer metal composite clamping actuator with soft matter elasticity-detecting capability for biomedical applications.

    Science.gov (United States)

    Feng, Guo-Hua; Huang, Wei-Lun

    2014-12-01

    This paper presents a smart tuning-fork-shaped ionic polymer metal composite (IPMC) clamping actuator for biomedical applications. The two fingers of the actuator, which perform the clamping motion, can be electrically controlled through a unique electrode design on the IPMC material. The generated displacement or strain of the fingers can be sensed using an integrated soft strain-gage sensor. The IPMC actuator and associated soft strain gage were fabricated using a micromachining technique. A 13.5×4×2 mm(3) actuator was shaped from Nafion solution and a selectively grown metal electrode formed the active region. The strain gage consisted of patterned copper foil and polyethylene as a substrate. The relationship between the strain gage voltage output and the displacement at the front end of the actuator's fingers was characterized. The equivalent Young's modulus, 13.65 MPa, of the soft-strain-gage-integrated IPMC finger was analyzed. The produced clamping force exhibited a linear increasing rate of 1.07 mN/s, based on a dc driving voltage of 7 V. Using the developed actuator to clamp soft matter and simultaneously acquire its Young's modulus was achieved. This demonstrated the feasibility of the palpation function and the potential use of the actuator in minimally invasive surgery. Copyright © 2014 Elsevier B.V. All rights reserved.

  1. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  2. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  3. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  4. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  5. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  6. Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces

    International Nuclear Information System (INIS)

    Birner, Stefan

    2011-01-01

    The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano 3 software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano 3 software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model to recently

  7. Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Birner, Stefan

    2011-11-15

    The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano{sup 3} software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano{sup 3} software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model

  8. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  9. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  10. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  11. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  12. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  13. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  14. Tunable radiation emitting semiconductor device

    NARCIS (Netherlands)

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  15. Displacement gage

    International Nuclear Information System (INIS)

    Tanner, D.E.

    1981-01-01

    This invention concerns a position indicator for detecting and indicating the position of a remotely placed component mobile about an axis, such as valves located inside vessels and pipelines under pressure physically inaccessible when the reactor is working. A light source is channelled and aligned on the spindle of the valve wheel. It reaches a fixed reflector secured to this spindle. The reflected light is received on a light collector of which each collector composed of a photodiode sends back the signal by optical fibre to the display area. The position of the wheel is therefore determined by the lighting of one of the optical fibres [fr

  16. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  17. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  18. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  19. Depletion field focusing in semiconductors

    NARCIS (Netherlands)

    Prins, M.W.J.; Gelder, Van A.P.

    1996-01-01

    We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

  20. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  1. Semi-conductor rectifiers

    International Nuclear Information System (INIS)

    1981-01-01

    A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

  2. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  3. Gage for gas flow measurement especially in gas-suction pipes

    International Nuclear Information System (INIS)

    Renner, K.; Stegmanns, W.

    1978-01-01

    The gage utilizes the differential pressure given by a differential pressure producer to generate, in a bypass, a partial gas flow measured by means of a direct-reading anemometer of windmill type. The partial gas flow is generated between pressure pick-up openings in the gas-suction pipe in front of a venturi insert and pressure pick-up openings at the bottleneck of the venturi insert. The reading of the anemometer is proportional to the main gas flow and independent of the variables of state and the properties of the gases to be measured. (RW) [de

  4. Doses of personnel employed in the manufacture of radioisotope thickness gages

    International Nuclear Information System (INIS)

    Kostenetskij, M.I.

    1981-01-01

    Doses of the personnel of one of the plants manifacturing radioisotope thickness gages of different types are determined. Annual doses to the body protected by shielding screens are low and according to the data of individual dosimetry constitute 5x10 -3 -6x10 -3 J/kg (0.5-0.6 rem). A table of radiation doses to hands obtained during all kind of operations, is given. Measures for the further reduction of radiation doses of the personnel are suggested [ru

  5. New constraints on slip rates and locking depths of the San Andreas Fault System from Sentinel-1A InSAR and GAGE GPS observations

    Science.gov (United States)

    Ward, L. A.; Smith-Konter, B. R.; Higa, J. T.; Xu, X.; Tong, X.; Sandwell, D. T.

    2017-12-01

    After over a decade of operation, the EarthScope (GAGE) Facility has now accumulated a wealth of GPS and InSAR data, that when successfully integrated, make it possible to image the entire San Andreas Fault System (SAFS) with unprecedented spatial coverage and resolution. Resulting surface velocity and deformation time series products provide critical boundary conditions needed for improving our understanding of how faults are loaded across a broad range of temporal and spatial scales. Moreover, our understanding of how earthquake cycle deformation is influenced by fault zone strength and crust/mantle rheology is still developing. To further study these processes, we construct a new 4D earthquake cycle model of the SAFS representing the time-dependent 3D velocity field associated with interseismic strain accumulation, co-seismic slip, and postseismic viscoelastic relaxation. This high-resolution California statewide model, spanning the Cerro Prieto fault to the south to the Maacama fault to the north, is constructed on a 500 m spaced grid and comprises variable slip and locking depths along 42 major fault segments. Secular deep slip is prescribed from the base of the locked zone to the base of the elastic plate while episodic shallow slip is prescribed from the historical earthquake record and geologic recurrence intervals. Locking depths and slip rates for all 42 fault segments are constrained by the newest GAGE Facility geodetic observations; 3169 horizontal GPS velocity measurements, combined with over 53,000 line-of-sight (LOS) InSAR velocity observations from Sentinel-1A, are used in a weighted least-squares inversion. To assess slip rate and locking depth sensitivity of a heterogeneous rheology model, we also implement variations in crustal rigidity throughout the plate boundary, assuming a coarse representation of shear modulus variability ranging from 20-40 GPa throughout the (low rigidity) Salton Trough and Basin and Range and the (high rigidity) Central

  6. Strain measurements during pressurized thermal shock experiment

    International Nuclear Information System (INIS)

    Tarso Vida Gomes, P. de; Julio Ricardo Barreto Cruz; Tanius Rodrigues Mansur; Denis Henrique Bianchi Scaldaferri; Miguel Mattar Neto

    2005-01-01

    For the life extension of nuclear power plants, the residual life of most of their components must be evaluated along all their operating time. Concerning the reactor pressure vessel, the pressurized thermal shock (PTS) is a very important event to be considered. For better understanding the effects of this kind of event, tests are made. The approach described here consisted of building a simplified in-scale physical model of the reactor pressure vessel, submitting it to the actual operating temperature and pressure conditions and provoking a thermal shock by means of cold water flow in its external surface. To conduct such test, the Nuclear Technology Development Center (CDTN) has been conducting several studies related to PTS and has also built a laboratory that has made possible the simulation of the PTS loading conditions. Several cracks were produced in the external surface of the reactor pressure vessel model. Strain gages were fixed by means of electrical discharge welding over the cracks regions in both external and internal surfaces. The temperature was monitored in 10 points across the vessel wall. The internal pressure was manually controlled and monitored using a pressure transducer. Two PTS experiments were conducted and this paper presents the strain measurement procedures applied to the reactor pressure vessel model, during the PTS, using strain gages experimental methodology. (authors)

  7. Establishing a Multi-scale Stream Gaging Network in the Whitewater River Basin, Kansas, USA

    Science.gov (United States)

    Clayton, J.A.; Kean, J.W.

    2010-01-01

    Investigating the routing of streamflow through a large drainage basin requires the determination of discharge at numerous locations in the channel network. Establishing a dense network of stream gages using conventional methods is both cost-prohibitive and functionally impractical for many research projects. We employ herein a previously tested, fluid-mechanically based model for generating rating curves to establish a stream gaging network in the Whitewater River basin in south-central Kansas. The model was developed for the type of channels typically found in this watershed, meaning that it is designed to handle deep, narrow geomorphically stable channels with irregular planforms, and can model overbank flow over a vegetated floodplain. We applied the model to ten previously ungaged stream reaches in the basin, ranging from third- to sixth-order channels. At each site, detailed field measurements of the channel and floodplain morphology, bed and bank roughness, and vegetation characteristics were used to quantify the roughness for a range of flow stages, from low flow to overbank flooding. Rating curves that relate stage to discharge were developed for all ten sites. Both fieldwork and modeling were completed in less than 2 years during an anomalously dry period in the region, which underscores an advantage of using theoretically based (as opposed to empirically based) discharge estimation techniques. ?? 2010 Springer Science+Business Media B.V.

  8. Optimization of protection and calibration of the moisture-density gages troxler

    International Nuclear Information System (INIS)

    RAKOTONDRAVANONA, J.E.

    2011-01-01

    The purpose of this work is the implementation of the principle of optimization of the protection and calibration of moisture-density gages TROXLER. The main objectives are the application of radiation protection and the feasibility of a calibration laboratory design. The calibration of density and moisture may confirm the calibration of moisture-density gages TROXLER. The calibration of density consists of the assembly of measurements on three calibration blocks (magnesium, aluminium and magnesium/aluminium) built in the TRACKER. The value of density uncertainty is ±32 Kg.m -3 . The calibration of moisture is carried out on two calibration blocks (magnesium and magnesium/polyethylene)The value of moisture uncertainty is ±16 Kg.m -3 . The design of the laboratory returns to the dose limitation. The laboratory is designed mainly wall out of ordinary concrete, a good attenuator of the gamma radiations and neutron. For the design, the value of term source gamma is 25.77±0.20μSv.h -1 and the value of term source neutron is 7.88±0.35μSv.h -1 are used for the thickness of the walls. The importance of the design makes it possible to attenuate to the maximum doses and rates dose until the total absorption of the radiations. [fr

  9. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  10. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  11. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  12. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  13. Optically coupled semiconductor device

    Energy Technology Data Exchange (ETDEWEB)

    Kumagaya, Naoki

    1988-11-18

    This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

  14. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  16. Muonium states in semiconductors

    International Nuclear Information System (INIS)

    Patterson, B.D.

    1987-01-01

    There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

  17. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  18. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  20. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  1. Semiconductor Ion Implanters

    International Nuclear Information System (INIS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-01-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  2. The Physics of Semiconductors

    Science.gov (United States)

    Brennan, Kevin F.

    1999-02-01

    Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

  3. An overview of the GAGE cancer/testis antigen family with the inclusion of newly identified members

    DEFF Research Database (Denmark)

    Gjerstorff, M F; Ditzel, H J

    2008-01-01

    . This review describes the structure and phylogeny of the GAGE family members and presents a revised nomenclature, which will enable a more clear distinction of genes and gene products. The GAGE gene locus at chromosome X p11.23 consists of at least 16 genes, each of which is located in one of an equal number...... of highly conserved tandem repeats, and more genes remain to be identified. These genes are likely the creation of unequal replication under positive selection after the divergence of primates from other mammals. The encoded products are predicted to be highly similar small acidic proteins involved in germ...

  4. Characterization of advanced semiconductor materials by positron annihilation

    International Nuclear Information System (INIS)

    Uedono, Akira; Suzuki, Ryoichi; Ohdaira, Toshiyuki; Ishibashi, Shoji

    2005-01-01

    Positron annihilation is an established technique for investigating vacancy-type defects near surfaces or interfaces. Using this technique, one can identify defect species in a nondestructive manner. Because there is no restriction of sample conductivity or temperature, this technique can be applied to a various materials, such as semiconductors, metals, metal oxides, and polymers. The positron annihilation has been applied to the studies of Si-technology related materials, which show that it can provide useful information for the development of semiconductor devices. In this article, we report the results obtained for electroplated Cu, strained Si and high-k materials. (author)

  5. Processing and Characterization of a Novel Distributed Strain Sensor Using Carbon Nanotube-Based Nonwoven Composites

    Directory of Open Access Journals (Sweden)

    Hongbo Dai

    2015-07-01

    Full Text Available This paper describes the development of an innovative carbon nanotube-based non-woven composite sensor that can be tailored for strain sensing properties and potentially offers a reliable and cost-effective sensing option for structural health monitoring (SHM. This novel strain sensor is fabricated using a readily scalable process of coating Carbon nanotubes (CNT onto a nonwoven carrier fabric to form an electrically-isotropic conductive network. Epoxy is then infused into the CNT-modified fabric to form a free-standing nanocomposite strain sensor. By measuring the changes in the electrical properties of the sensing composite the deformation can be measured in real-time. The sensors are repeatable and linear up to 0.4% strain. Highest elastic strain gage factors of 1.9 and 4.0 have been achieved in the longitudinal and transverse direction, respectively. Although the longitudinal gage factor of the newly formed nanocomposite sensor is close to some metallic foil strain gages, the proposed sensing methodology offers spatial coverage, manufacturing customizability, distributed sensing capability as well as transverse sensitivity.

  6. Peri-Implant Strain in an In Vitro Model.

    Science.gov (United States)

    Hussaini, Souheil; Vaidyanathan, Tritala K; Wadkar, Abhinav P; Quran, Firas A Al; Ehrenberg, David; Weiner, Saul

    2015-10-01

    An in vitro experimental model was designed and tested to determine the influence that peri-implant strain may have on the overall crestal bone. Strain gages were attached to polymethylmethacrylate (PMMA) models containing a screw-type root form implant at sites 1 mm from the resin-implant interface. Three different types of crown superstructures (cemented, 1-screw [UCLA] and 2-screw abutment types) were tested. Loading (1 Hz, 200 N load) was performed using a MTS Mechanical Test System. The strain gage data were stored and organized in a computer for statistical treatment. Strains for all abutment types did not exceed the physiological range for modeling and remodeling of cancellous bone, 200-2500 με (microstrain). For approximately one-quarter of the trials, the strain values were less than 200 με the zone for bone atrophy. The mean microstrain obtained was 517.7 με. In conclusion, the peri-implant strain in this in vitro model did not exceed the physiologic range of bone remodeling under axial occlusal loading.

  7. Electrodes for Semiconductor Gas Sensors

    Science.gov (United States)

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  8. Spiking Phineas Gage: a neurocomputational theory of cognitive-affective integration in decision making.

    Science.gov (United States)

    Wagar, Brandon M; Thagard, Paul

    2004-01-01

    The authors present a neurological theory of how cognitive information and emotional information are integrated in the nucleus accumbens during effective decision making. They describe how the nucleus accumbens acts as a gateway to integrate cognitive information from the ventromedial prefrontal cortex and the hippocampus with emotional information from the amygdala. The authors have modeled this integration by a network of spiking artificial neurons organized into separate areas and used this computational model to simulate 2 kinds of cognitive-affective integration. The model simulates successful performance by people with normal cognitive-affective integration. The model also simulates the historical case of Phineas Gage as well as subsequent patients whose ability to make decisions became impeded by damage to the ventromedial prefrontal cortex.

  9. Development of semiconductor electronics

    International Nuclear Information System (INIS)

    Bardeen, John.

    1977-01-01

    In 1931, Wilson applied Block's theory about the energy bands for the motion of electrons in a crystal lattice to semiconductors and showed that conduction can take place in two different ways, by electrons and by holes. Not long afterwards Frenkel showed that these carriers can flow by diffusion in a concentration gradient as well as under the influence of an electric field and wrote down equations for the current flow. The third major contribution, in the late 1930's was the explanation of rectification at a metalsemiconductor contact by Mott and more completely by Schottky. In late 1947 the first transistor of the point contact type was invented by Brattin, Shockley and Bardeen. Then after single crystals of Ge were grown, the junction transistor was developed by the same group. The first silicon transistors appeared in 1954. Then an important step was discovery of the planar transistor by Hoenri in 1960 which led to development of integrated circuits by 1962. Many transistors are produced by batch processing on a slice of silicon. Then in 1965 Mos (Metal-Oxide Semiconductor) transistor and in 1968 LSI (Large Scale Intergration circuits) were developed. Aside from electronic circuits, there are many other applications of semiconductors, including junction power rectifiers, junction luminescence (including lasers), solar batteries, radiation detectors, microwave oscillators and charged-coupled devices for computer memories and devices. One of the latest developments is a microprocessor with thousands of transistors and associated circuitry on a single small chip of silicon. It can be programmed to provide a variety of circuit functions, thus it is not necessary to go through the great expense of LSI's for each desired function, but to use standard microprocessors and program to do the job

  10. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  11. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  12. Electrowetting on semiconductors

    Science.gov (United States)

    Palma, Cesar; Deegan, Robert

    2015-01-01

    Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

  13. Semiconductor ionizino. radiation detectors

    International Nuclear Information System (INIS)

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  14. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  15. CCST [Center for Compound Semiconductor Technology] research briefs

    International Nuclear Information System (INIS)

    Zipperian, T.E.; Voelker, E.R.

    1989-12-01

    This paper discusses the following topics: theoretical predictions of valence and conduction band offsets in III-V semiconductors; reflectance modulation of a semiconductor superlattice optical mirror; magnetoquantum oscillations of the phonon-drag thermoelectric power in quantum wells; correlation between photoluminescence line shape and device performance of p-channel strained-layer materials; control of threading dislocations in heteroepitaxial structures; improved growth of CdTe on GaAs by patterning; role of structure threading dislocations in relaxation of highly strained single-quantum-well structures; InAlAs growth optimization using reflection mass spectrometry; nonvolatile charge storage in III-V heterostructures; optically triggered thyristor switches; InAsSb strained-layer superlattice infrared detectors with high detectivities; resonant periodic gain surface-emitting semiconductor lasers; performance advantages of strained-quantum-well lasers in AlGaAs/InGaAs; optical integrated circuit for phased-array radar antenna control; and deposition and novel device fabrication from Tl 2 Ca 2 Ba 2 Cu 3 O y thin films

  16. MAGE-A1, GAGE and NY-ESO-1 cancer/testis antigen expression during human gonadal development

    DEFF Research Database (Denmark)

    Gjerstorff, Morten F; Kock, Kirsten; Nielsen, Ole

    2007-01-01

    BACKGROUND: Cancer/testis antigens (CTAs) are expressed in several cancers and during normal adult male germ cell differentiation. Little is known about their role in fetal development of human germ cells. METHODS: We examined expression of the CTAs MAGE-A1, GAGE and NY-ESO-1 in fetal gonads...

  17. Standard practice for strain controlled thermomechanical fatigue testing

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2010-01-01

    1.1 This practice covers the determination of thermomechanical fatigue (TMF) properties of materials under uniaxially loaded strain-controlled conditions. A “thermomechanical” fatigue cycle is here defined as a condition where uniform temperature and strain fields over the specimen gage section are simultaneously varied and independently controlled. This practice is intended to address TMF testing performed in support of such activities as materials research and development, mechanical design, process and quality control, product performance, and failure analysis. While this practice is specific to strain-controlled testing, many sections will provide useful information for force-controlled or stress-controlled TMF testing. 1.2 This practice allows for any maximum and minimum values of temperature and mechanical strain, and temperature-mechanical strain phasing, with the restriction being that such parameters remain cyclically constant throughout the duration of the test. No restrictions are placed on en...

  18. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  19. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  20. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  1. Semiconductor photocatalysis principles and applications

    CERN Document Server

    Kisch, Horst

    2014-01-01

    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  2. Progress in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Walton, J.; Gatti, E.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

  3. Semiconductor materials and their properties

    NARCIS (Netherlands)

    Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

    2017-01-01

    Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

  4. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  5. Terahertz Nonlinear Optics in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

  6. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  7. Electro optical system to measure strains at high temperature

    Science.gov (United States)

    Sciammarella, Cesar A.

    1991-12-01

    The measurement of strains at temperatures of the order of 1000 C has become a very important field of research. Technological advances in areas such as the analysis of high speed aircraft structures and high efficiency thermal engines require operational temperatures of this order of magnitude. Current techniques for the measurement of strains, such as electrical strain gages, are at the limit of their useful range and new methods need to be developed. Optical techniques are very attractive in this type of application because of their noncontacting nature. Holography is of particular interest because a minimal preparation of the surfaces is required. Optoelectronics holography is specially suited for this type of application, from the point of view of industrial use. There are a number of technical problems that need to be overcome to measure strains using holographic interferometry at high temperatures. Some of these problems are discussed, and solutions are given. A specimen instrumented with high temperature strains gages is used to compare the results of both technologies.

  8. Variation of Shrinkage Strain within the Depth of Concrete Beams

    Directory of Open Access Journals (Sweden)

    Jong-Hyun Jeong

    2015-11-01

    Full Text Available The variation of shrinkage strain within beam depth was examined through four series of time-dependent laboratory experiments on unreinforced concrete beam specimens. Two types of beam specimens, horizontally cast and vertically cast, were tested; shrinkage variation was observed in the horizontally cast specimens. This indicated that the shrinkage variation within the beam depth was due to water bleeding and tamping during the placement of the fresh concrete. Shrinkage strains were measured within the beam depth by two types of strain gages, surface-attached and embedded. The shrinkage strain distribution within the beam depth showed a consistent tendency for the two types of gages. The test beams were cut into four sections after completion of the test, and the cutting planes were divided into four equal sub-areas to measure the aggregate concentration for each sub-area of the cutting plane. The aggregate concentration increased towards the bottom of the beam. The shrinkage strain distribution was estimated by Hobbs’ equation, which accounts for the change of aggregate volume concentration.

  9. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  10. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  11. Semiconductor radiation detector

    Science.gov (United States)

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  12. Semiconductor testing method

    International Nuclear Information System (INIS)

    Brown, Stephen.

    1992-01-01

    In a method of avoiding use of nuclear radiation, eg gamma rays, X-rays, electron beams, for testing semiconductor components for resistance to hard radiation, which hard radiation causes data corruption in some memory devices and 'latch-up' in others, similar fault effects can be achieved using a xenon or other 'light' flash gun even though the penetration of light is significantly less than that of gamma rays. The method involves treating a device with gamma radiation, measuring a particular fault current at the onset of a fault event, repeating the test with light to confirm the occurrence of the fault event at the same measured fault current, and using the fault current value as a reference for future tests using light on similar devices. (author)

  13. Radial semiconductor drift chambers

    International Nuclear Information System (INIS)

    Rawlings, K.J.

    1987-01-01

    The conditions under which the energy resolution of a radial semiconductor drift chamber based detector system becomes dominated by the step noise from the detector dark current have been investigated. To minimise the drift chamber dark current attention should be paid to carrier generation at Si/SiO 2 interfaces. This consideration conflicts with the desire to reduce the signal risetime: a higher drift field for shorter signal pulses requires a larger area of SiO 2 . Calculations for the single shaping and pseudo Gaussian passive filters indicate that for the same degree of signal risetime sensitivity in a system dominated by the step noise from the detector dark current, the pseudo Gaussian filter gives only a 3% improvement in signal/noise and 12% improvement in rate capability compared with the single shaper performance. (orig.)

  14. Energy distribution in semiconductors

    International Nuclear Information System (INIS)

    Ance, C.

    1979-01-01

    For various semiconductors the dispersive energy Esub(d) defined in the Wemple-Didomenico model is connected with the covalent and ionic energies Esub(h) and C. A continuous curve of ionicity against the ratio of the two energies Esub(A) and Esub(B), connected to Esub(h) and C is reported. Afromowitz's model is applied to the ternary compounds Gasub(1-x)Alsub(x)Sb using optical decomposition. From these results the average energy gap Esub(g) is given by Esub(g) = D 0 M 0 sup((IB))/(epsilon 1 (0)-1) where M 0 sup((IB)) is the interband transition contribution to the optical moment M 0 . (author)

  15. Organic Semiconductor Photovoltaics

    Science.gov (United States)

    Sariciftci, Niyazi Serdar

    2005-03-01

    Recent developments on organic photovoltaic elements are reviewed. Semiconducting conjugated polymers and molecules as well as nanocrystalline inorganic semiconductors are used in composite thin films. The photophysics of such photoactive devices is based on the photoinduced charge transfer from donor type semiconducting molecules onto acceptor type molecules such as Buckminsterfullerene, C60 and/or nanoparticles. Similar to the first steps in natural photosynthesis, this photoinduced electron transfer leads to a number of potentially interesting applications which include sensitization of the photoconductivity and photovoltaic phenomena. Examples of photovoltaic architectures are discussed with their potential in terrestrial solar energy conversion. Several materials are introduced and discussed for their photovoltaic activities. Furthermore, nanomorphology has been investigated with AFM, SEM and TEM. The morphology/property relationship for a given photoactive system is found to be a major effect.

  16. Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

    Energy Technology Data Exchange (ETDEWEB)

    Chen Feng [Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Euaruksakul, Chanan; Himpsel, F J; Lagally, Max G [University of Wisconsin-Madison, Madison, WI 53706 (United States); Liu Zheng; Liu Feng, E-mail: lagally@engr.wisc.edu [University of Utah, Salt Lake City, UT 84112 (United States)

    2011-08-17

    Strain changes the band structure of semiconductors. We use x-ray absorption spectroscopy to study the change in the density of conduction band (CB) states when silicon is uniaxially strained along the [1 0 0] and [1 1 0] directions. High stress can be applied to silicon nanomembranes, because their thinness allows high levels of strain without fracture. Strain-induced changes in both the sixfold degenerate {Delta} valleys and the eightfold degenerate L valleys are determined quantitatively. The uniaxial deformation potentials of both {Delta} and L valleys are directly extracted using a strain tensor appropriate to the boundary conditions, i.e., confinement in the plane in the direction orthogonal to the straining direction, which correspond to those of strained CMOS in commercial applications. The experimentally determined deformation potentials match the theoretical predictions well. We predict electron mobility enhancement created by strain-induced CB modifications.

  17. Structural defects in cubic semiconductors characterized by aberration-corrected scanning transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Arroyo Rojas Dasilva, Yadira; Kozak, Roksolana; Erni, Rolf; Rossell, Marta D., E-mail: marta.rossell@empa.ch

    2017-05-15

    The development of new electro-optical devices and the realization of novel types of transistors require a profound understanding of the structural characteristics of new semiconductor heterostructures. This article provides a concise review about structural defects which occur in semiconductor heterostructures on the basis of micro-patterned Si substrates. In particular, one- and two-dimensional crystal defects are being discussed which are due to the plastic relaxation of epitaxial strain caused by the misfit of crystal lattices. Besides a few selected examples from literature, we treat in particular crystal defects occurring in GaAs/Si, Ge/Si and β-SiC/Si structures which are studied by high-resolution annular dark-field scanning transmission electron microscopy. The relevance of this article is twofold; firstly, it should provide a collection of data which are of help for the identification and characterization of defects in cubic semiconductors by means of atomic-resolution imaging, and secondly, the experimental data shall provide a basis for advancing the understanding of device characteristics with the aid of theoretical modelling by considering the defective nature of strained semiconductor heterostructures. - Highlights: • The heterogeneous integration of high-quality compound semiconductors remains a challenge. • Lattice defects cause severe degradation of the semiconductor device performances. • Aberration-corrected HAADF-STEM allows atomic-scale characterization of defects. • An overview of lattice defects found in cubic semiconductors is presented. • Theoretical modelling and calculations are needed to determine the defect properties.

  18. Magnetic excitations in ferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

    2009-01-01

    Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

  19. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  20. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1990-01-01

    The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

  1. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

  2. Semiconductor device comprising a pn-heterojunction

    NARCIS (Netherlands)

    2007-01-01

    An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

  3. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  4. Additional compound semiconductor nanowires for photonics

    Science.gov (United States)

    Ishikawa, F.

    2016-02-01

    GaAs related compound semiconductor heterostructures are one of the most developed materials for photonics. Those have realized various photonic devices with high efficiency, e. g., lasers, electro-optical modulators, and solar cells. To extend the functions of the materials system, diluted nitride and bismide has been paid attention over the past decade. They can largely decrease the band gap of the alloys, providing the greater tunability of band gap and strain status, eventually suppressing the non-radiative Auger recombinations. On the other hand, selective oxidation for AlGaAs is a vital technique for vertical surface emitting lasers. That enables precisely controlled oxides in the system, enabling the optical and electrical confinement, heat transfer, and mechanical robustness. We introduce the above functions into GaAs nanowires. GaAs/GaAsN core-shell nanowires showed clear redshift of the emitting wavelength toward infrared regime. Further, the introduction of N elongated the carrier lifetime at room temperature indicating the passivation of non-radiative surface recombinations. GaAs/GaAsBi nanowire shows the redshift with metamorphic surface morphology. Selective and whole oxidations of GaAs/AlGaAs core-shell nanowires produce semiconductor/oxide composite GaAs/AlGaOx and oxide GaOx/AlGaOx core-shell nanowires, respectively. Possibly sourced from nano-particle species, the oxide shell shows white luminescence. Those property should extend the functions of the nanowires for their application to photonics.

  5. Effect of strain on bond-specific reaction kinetics during the oxidation of H-terminated (111) Si

    International Nuclear Information System (INIS)

    Gokce, Bilal; Aspnes, David E.; Gundogdu, Kenan

    2011-01-01

    Although strain is used in semiconductor technology for manipulating optical, electronic, and chemical properties of semiconductors, the understanding of the microscopic phenomena that are affected or influenced by strain is still incomplete. Second-harmonic generation data obtained during the air oxidation of H-terminated (111) Si reveal the effect of compressive strain on this chemical reaction. Even small amounts of strain manipulate the reaction kinetics of surface bonds significantly, with tensile strain enhancing oxidation and compressive strain retarding it. This dramatic change suggests a strain-driven charge transfer mechanism between Si-H up bonds and Si-Si back bonds in the outer layer of Si atoms.

  6. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

    NARCIS (Netherlands)

    2008-01-01

    The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

  7. Mehanical Properties of Electron Beam Welded Joints in Thick Gage CA6NM Stainless Steel

    Science.gov (United States)

    Sarafan, Sheida; Wanjara, Priti; Gholipour, Javad; Champliaud, Henri; Mathieu, Louis

    2017-10-01

    Design of hydroelectric turbine components requires high integrity welds (without detectable volumetric defects) in heavy gage sections of stainless steel materials, such as ASTM A743 grade CA6NM—a low carbon 13% Cr-4% Ni martensitic stainless steel that is manufactured in cast form. In this work, 90-mm-thick plates of CA6NM were joined using a single-pass autogenous electron beam (EB) welding process and the mechanical properties were evaluated in the as-welded condition to characterize the performance of the joints. The static tensile properties that were evaluated in two directions—transverse and longitudinal to the EB weld seam—demonstrated conformance of the joints with the requirements of the ASME Section IX standard. The Charpy impact energies of the EB welds—measured at -18 °C on samples with V-notch roots located in the fusion and heat-affected zones—met the minimum requirements of 27 J specified in ASME Section VIII standard. In addition, bend tests that were conducted on the entire weld cross section displayed no discontinuities on the tension side of the bent joints. Hence, the developed EB welding process was demonstrated to render high-performance joints and promises key advantages for industrialization, such as cost savings through reductions in consumable material, production time and labor intensity.

  8. Tubular gage for a liquid-metal-cooled fast breeder reactor

    International Nuclear Information System (INIS)

    Hutter, E.; Tuma, L.A.

    1977-01-01

    Spring-loaded plungers are arranged about a housing for insertion into a polygonal tube, one plunger for each side of the tube. Each plunger has a locking cam and sliding wedge mechanism which can overcome the spring force associated with the plunger and lock it in any position. The wedges are operated by a rod movable axially in the housing. Several housings with their associated plungers can be stacked. The stack is lowered into the polygonal tube with all of the plungers locked in a fully inward position. When the stack is in the tube, each wedge is moved to release its locking cam, allowing each of the plungers to spring outward against an inner side of the tube. Each housing will thus gage the internal dimensions of the tube at its elevation. The plungers are locked in position, the entire stack is rotated to bring the plungers into the corners described by the intersections of the flat sides, and the stack is removed from the tube whereupon the dimensions across opposite locked plungers may be read by a micrometer

  9. Flight Test Results from the Rake Airflow Gage Experiment on the F-15B Airplane

    Science.gov (United States)

    Frederick, Michael A.; Ratnayake, Nalin A.

    2011-01-01

    The Rake Airflow Gage Experiment involves a flow-field survey rake that was flown on the Propulsion Flight Test Fixture at the NASA Dryden Flight Research Center using the Dryden F-15B research test bed airplane. The objective of this flight test was to ascertain the flow-field angularity, local Mach number profile, total pressure distortion, and dynamic pressure at the aerodynamic interface plane of the Channeled Centerbody Inlet Experiment. This new mixed-compression, supersonic inlet is planned for flight test in the near term. Knowledge of the flow-field characteristics at this location underneath the airplane is essential to flight test planning and computational modeling of the new inlet, anairplane, flying at a free-stream Mach number of 1.65 and a pressure altitude of 40,000 ft, would achieve the desired local Mach number for the future inlet flight test. Interface plane distortion levels of 2 percent and a local angle of attack of -2 deg were observed at this condition. Alternative flight conditions for future testing and an exploration of certain anomalous data also are provided.

  10. Selective, electrochemical etching of a semiconductor

    Science.gov (United States)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  11. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  12. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  13. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  14. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  15. Semiconductor technology program. Progress briefs

    Science.gov (United States)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  16. Semiconductor radiation detectors. Device physics

    International Nuclear Information System (INIS)

    Lutz, G.

    2007-01-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  17. Self-assembling peptide semiconductors

    Science.gov (United States)

    Tao, Kai; Makam, Pandeeswar; Aizen, Ruth; Gazit, Ehud

    2017-01-01

    Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems. PMID:29146781

  18. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  19. Wake fields in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1994-05-01

    It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

  20. Semiconductor research with reactor neutrons

    International Nuclear Information System (INIS)

    Kimura, Itsuro

    1992-01-01

    Reactor neutrons play an important role for characterization of semiconductor materials as same as other advanced materials. On the other hand reactor neutrons bring about not only malignant irradiation effects called radiation damage, but also useful effects such as neutron transmutation doping and defect formation for opto-electronics. Research works on semiconductor materials with the reactor neutrons of the Kyoto University Reactor (KUR) are briefly reviewed. In this review, a stress is laid on the present author's works. (author)

  1. Semiconductor crystal high resolution imager

    Science.gov (United States)

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  2. Dissipative chaos in semiconductor superlattices

    Directory of Open Access Journals (Sweden)

    F. Moghadam

    2008-03-01

    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  3. Ten years of real-time streamflow gaging of turkey creek - where we have been and where we are going

    Science.gov (United States)

    Paul Conrads; Devendra Amatya

    2016-01-01

    The Turkey Creek watershed is a third-order coastal plain stream system draining an area of approximately 5,240 hectares of the Francis Marion National Forest and located about 37 miles northwest of Charleston near Huger, South Carolina. The U.S. Department of Agriculture (USDA) Forest Service maintained a streamflow gaging station on Turkey Creek from 1964 to 1981....

  4. Reducing leakage current in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

    2018-03-06

    A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

  5. Optical orientation in ferromagnet/semiconductor hybrids

    International Nuclear Information System (INIS)

    Korenev, V L

    2008-01-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

  6. Optical orientation in ferromagnet/semiconductor hybrids

    Science.gov (United States)

    Korenev, V. L.

    2008-11-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

  7. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    OpenAIRE

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  8. Semiconductors for plasmonics and metamaterials

    DEFF Research Database (Denmark)

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

  9. Ripening of Semiconductor Nanoplatelets.

    Science.gov (United States)

    Ott, Florian D; Riedinger, Andreas; Ochsenbein, David R; Knüsel, Philippe N; Erwin, Steven C; Mazzotti, Marco; Norris, David J

    2017-11-08

    Ostwald ripening describes how the size distribution of colloidal particles evolves with time due to thermodynamic driving forces. Typically, small particles shrink and provide material to larger particles, which leads to size defocusing. Semiconductor nanoplatelets, thin quasi-two-dimensional (2D) particles with thicknesses of only a few atomic layers but larger lateral dimensions, offer a unique system to investigate this phenomenon. Experiments show that the distribution of nanoplatelet thicknesses does not defocus during ripening, but instead jumps sequentially from m to (m + 1) monolayers, allowing precise thickness control. We investigate how this counterintuitive process occurs in CdSe nanoplatelets. We develop a microscopic model that treats the kinetics and thermodynamics of attachment and detachment of monomers as a function of their concentration. We then simulate the growth process from nucleation through ripening. For a given thickness, we observe Ostwald ripening in the lateral direction, but none perpendicular. Thicker populations arise instead from nuclei that capture material from thinner nanoplatelets as they dissolve laterally. Optical experiments that attempt to track the thickness and lateral extent of nanoplatelets during ripening appear consistent with these conclusions. Understanding such effects can lead to better synthetic control, enabling further exploration of quasi-2D nanomaterials.

  10. A semiconductor laser device

    Energy Technology Data Exchange (ETDEWEB)

    Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

    1984-03-17

    A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

  11. Semiconductor integrated circuits

    International Nuclear Information System (INIS)

    Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

    1979-01-01

    An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

  12. Impurity gettering in semiconductors

    Science.gov (United States)

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  13. Semiconductor acceleration sensor

    Science.gov (United States)

    Ueyanagi, Katsumichi; Kobayashi, Mitsuo; Goto, Tomoaki

    1996-09-01

    This paper reports a practical semiconductor acceleration sensor especially suited for automotive air bag systems. The acceleration sensor includes four beams arranged in a swastika structure. Two piezoresistors are formed on each beam. These eight piezoresistors constitute a Wheatstone bridge. The swastika structure of the sensing elements, an upper glass plate and a lower glass plate exhibit the squeeze film effect which enhances air dumping, by which the constituent silicon is prevented from breakdown. The present acceleration sensor has the following features. The acceleration force component perpendicular to the sensing direction can be cancelled. The cross-axis sensitivity is less than 3 percent. And, the erroneous offset caused by the differences between the thermal expansion coefficients of the constituent materials can be canceled. The high aspect ratio configuration realized by plasma etching facilitates reducing the dimensions and improving the sensitivity of the acceleration sensor. The present acceleration sensor is 3.9 mm by 3.9 mm in area and 1.2 mm in thickness. The present acceleration sensor can measure from -50 to +50 G with sensitivity of 0.275 mV/G and with non-linearity of less than 1 percent. The acceleration sensor withstands shock of 3000 G.

  14. Precipitation data for water years 1992 and 1993 from a network of nonrecording gages at Yucca Mountain, Nevada

    International Nuclear Information System (INIS)

    Ambos, D.S.; Flint, A.L.; Hevesi, J.A.

    1995-01-01

    This report presents precipitation data collected in a storage gage network at Yucca Mountain, Nevada, from October 1, 1991, to September 30, 1993. The measured values indicate total accumulated precipitation for specified time intervals approximately corresponding to separate storm events. Installation of a precipitation monitoring network was initiated in January 1990, and was continually expanded and upgraded throughout the period ending in September 1993. The final network included 3 different gage types for a total of 133 gages at 108 locations within the three drainages overlying the potential repository site. Measured precipitation indicated above average accumulations for water years 1992 and 1993 relative to the most recent estimate of 6.7 inches for long-term average annual precipitation over the area of the network. The total precipitation averaged over the network in 1992 was about 8.2 inches with a maximum of about 11.2 inches measured at borehole USW GA-1. The total precipitation averaged over the network in 1993 was about 10.3 inches with a maximum of about 12.1 inches at neutron-access borehole UE-25 UZN number-sign 4

  15. Strain engineering on electronic structure and carrier mobility in monolayer GeP3

    Science.gov (United States)

    Zeng, Bowen; Long, Mengqiu; Zhang, Xiaojiao; Dong, Yulan; Li, Mingjun; Yi, Yougen; Duan, Haiming

    2018-06-01

    Using density functional theory coupled with the Boltzmann transport equation with relaxation time approximation, we have studied the strain effect on the electronic structure and carrier mobility of two-dimensional monolayer GeP3. We find that the energies of valence band maximum and conduction band minimum are nearly linearly shifted with a biaxial strain in the range of  ‑4% to 6%, and the band structure experiences a remarkable transition from semiconductor to metal with the appropriate compression (‑5% strain). Under biaxial strain, the mobility of the electron and hole in monolayer GeP3 reduces and increases by more than one order of magnitude, respectively. It is suggested that it is possible to perform successive transitions from an n-type semiconductor (‑4% strain) to a good performance p-semiconductor (+6% strain) by applying strain in monolayer GeP3, which is potentially useful for flexible electronics and nanosized mechanical sensors.

  16. Comparison of NEXRAD multisensor precipitation estimates to rain gage observations in and near DuPage County, Illinois, 2002–12

    Science.gov (United States)

    Spies, Ryan R.; Over, Thomas M.; Ortel, Terry W.

    2018-05-21

    In this report, precipitation data from 2002 to 2012 from the hourly gridded Next-Generation Radar (NEXRAD)-based Multisensor Precipitation Estimate (MPE) precipitation product are compared to precipitation data from two rain gage networks—an automated tipping bucket network of 25 rain gages operated by the U.S. Geological Survey (USGS) and 51 rain gages from the volunteer-operated Community Collaborative Rain, Hail, and Snow (CoCoRaHS) network—in and near DuPage County, Illinois, at a daily time step to test for long-term differences in space, time, and distribution. The NEXRAD–MPE data that are used are from the fifty 2.5-mile grid cells overlying the rain gages from the other networks. Because of the challenges of measuring of frozen precipitation, the analysis period is separated between days with or without the chance of freezing conditions. The NEXRAD–MPE and tipping-bucket rain gage precipitation data are adjusted to account for undercatch by multiplying by a previously determined factor of 1.14. Under nonfreezing conditions, the three precipitation datasets are broadly similar in cumulative depth and distribution of daily values when the data are combined spatially across the networks. However, the NEXRAD–MPE data indicate a significant trend relative to both rain gage networks as a function of distance from the NEXRAD radar just south of the study area. During freezing conditions, of the USGS network rain gages only the heated gages were considered, and these gages indicate substantial mean undercatch of 50 and 61 percent compared to the NEXRAD–MPE and the CoCoRaHS gages, respectively. The heated USGS rain gages also indicate substantially lower quantile values during freezing conditions, except during the most extreme (highest) events. Because NEXRAD precipitation products are continually evolving, the report concludes with a discussion of recent changes in those products and their potential for improved precipitation estimation. An appendix

  17. Strain-engineered growth of two-dimensional materials.

    Science.gov (United States)

    Ahn, Geun Ho; Amani, Matin; Rasool, Haider; Lien, Der-Hsien; Mastandrea, James P; Ager Iii, Joel W; Dubey, Madan; Chrzan, Daryl C; Minor, Andrew M; Javey, Ali

    2017-09-20

    The application of strain to semiconductors allows for controlled modification of their band structure. This principle is employed for the manufacturing of devices ranging from high-performance transistors to solid-state lasers. Traditionally, strain is typically achieved via growth on lattice-mismatched substrates. For two-dimensional (2D) semiconductors, this is not feasible as they typically do not interact epitaxially with the substrate. Here, we demonstrate controlled strain engineering of 2D semiconductors during synthesis by utilizing the thermal coefficient of expansion mismatch between the substrate and semiconductor. Using WSe 2 as a model system, we demonstrate stable built-in strains ranging from 1% tensile to 0.2% compressive on substrates with different thermal coefficient of expansion. Consequently, we observe a dramatic modulation of the band structure, manifested by a strain-driven indirect-to-direct bandgap transition and brightening of the dark exciton in bilayer and monolayer WSe 2 , respectively. The growth method developed here should enable flexibility in design of more sophisticated devices based on 2D materials.Strain engineering is an essential tool for modifying local electronic properties in silicon-based electronics. Here, Ahn et al. demonstrate control of biaxial strain in two-dimensional materials based on the growth substrate, enabling more complex low-dimensional electronics.

  18. Internships and UNAVCO: Training the Future Geoscience Workforce Through the NSF GAGE Facility

    Science.gov (United States)

    Morris, A. R.; MacPherson-Krutsky, C. C.; Charlevoix, D. J.; Bartel, B. A.

    2015-12-01

    Facilities are uniquely positioned to both serve a broad, national audience and provide unique workforce experience to students and recent graduates. Intentional efforts dedicated to broadening participation in the future geoscience workforce at the NSF GAGE (Geodesy Advancing Geosciences and EarthScope) Facility operated by UNAVCO, are designed to meet the needs of the next generation of students and professionals. As a university-governed consortium facilitating research and education in the geosciences, UNAVCO is well-situated to both prepare students for geoscience technical careers and advanced research positions. Since 1998, UNAVCO has offered over 165 student assistant or intern positions including engineering, data services, education and outreach, and business support. UNAVCO offers three formal programs: the UNAVCO Student Internship Program (USIP), Research Experiences in Solid Earth Science for Students (RESESS), and the Geo-Launchpad (GLP) internship program. Interns range from community college students up through graduate students and recent Masters graduates. USIP interns gain real-world work experience in a professional setting, collaborate with teams toward a common mission, and contribute their knowledge, skills, and abilities to the UNAVCO community. RESESS interns conduct authentic research with a scientist in the Front Range area as well as participate in a structured professional development series. GLP students are in their first 2 years of higher education and work alongside UNAVCO technical staff gaining valuable work experience and insight into the logistics of supporting scientific research. UNAVCO's efforts in preparing the next generation of scientists largely focuses on increasing diversity in the geosciences, whether continuing academic studies or moving into the workforce. To date, well over half of our interns and student assistants come from backgrounds historically underrepresented in the geosciences. Over 80% of former interns

  19. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  20. Plastic Deformation as a Means to Achieve Stretchable Polymer Semiconductors

    Science.gov (United States)

    O'Connor, Brendan

    Developing intrinsically stretchable semiconductors will seamlessly transition traditional devices into a stretchable platform. Polymer semiconductors are inherently soft materials due to the weak van der Waal intermolecular bonding allowing for flexible devices. However, these materials are not typically stretchable and when large strains are applied they either crack or plastically deform. Here, we study the use of repeated plastic deformation as a means of achieving stretchable films. In this talk, critical aspects of polymer semiconductor material selection, morphology and interface properties will be discussed that enable this approach of achieving stretchable films. We show that one can employ high performance donor-acceptor polymer semiconductors that are typically brittle through proper polymer blending to significantly increase ductility to achieve stretchable films. We demonstrate a polymer blend film that can be repeatedly deformed over 65%, while maintaining charge mobility consistently above 0.15 cm2/Vs. During the stretching process we show that the films follow a well-controlled repeated deformation pattern for over 100 stretching cycles.

  1. Nanocavity effects on misfit accommodation in semiconductors

    International Nuclear Information System (INIS)

    Myers, S.M.; Follstaedt, D.M.; Floro, J.A.; Lee, S.R.; Dawson, L.R.; Reno, J.L.

    1997-04-01

    The authors report an experimental and theoretical examination of the interaction of dislocations with microscopic cavities in semiconductors and the consequences for strain relaxation in heteroepitaxial structures. Dislocation-mediated relaxation and control of the resulting defect microstructure is central to the exploitation of such heterostructures in devices, and they demonstrate here that the introduction of nanometer-scale voids provides a means of strongly influencing this microstructural evolution. Methods for nanocavity formation using He ion implantation and annealing were developed for Si, SiGe on Si, GaAs, and InGaAs on GaAs. In detailed microstructural studies of SiGe on Si, cavities in the interfacial zone were shown to bind dislocations strongly. This effect reduced the excursion of dislocations into the nearby matrix, although threads into the SiGe overlayer were not eliminated. Interfacial cavities also increased the rate of stress relaxation by more than an order of magnitude as a result of enhanced nucleation of misfit dislocations. Further, in the presence of such cavities, the development of thickness variations in the overlayer during relaxation was suppressed. A theoretical model was developed to describe semiquantitatively the forces on dislocations arising from the combined influences of cavities, misfit strain, and the external surface. Predictions of this model are in accord with microstructural observations

  2. Semiconductor optoelectronic infrared spectroscopy

    International Nuclear Information System (INIS)

    Hollingworth, A.R.

    2001-08-01

    We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

  3. Strain rate behavior of magnetorheological materials

    International Nuclear Information System (INIS)

    Seminuk, Kenneth; Joshi, Vasant; Gump, Jared; Stoltz, Chad; Forbes, Jerry

    2014-01-01

    Strain rate response of two Hydroxyl-terminated Polybutadiene/ Iron (HTPB/Fe) compositions under electromagnetic fields has been investigated using a Split Hopkinson Pressure bar arrangement equipped with aluminum bars. Two HTPB/Fe compositions were developed, the first without plasticizer and the second containing plasticizer. Samples were tested with and without the application of a 0.01 Tesla magnetic field. Strain gauge data taken from the Split Hopkinson Pressure Bar has been used to determine the extent of change in mechanical properties by inducing a mild electromagnetic field onto each sample. Raw data from strain gages was processed using commercial software (Signo) and Excel spreadsheet. It is of particular interest to determine whether the mechanical properties of binder systems can be manipulated by adding ferrous or Magnetostrictive particulates. Data collected from the Split Hopkinson Pressure bar indicate changes in the Mechanical Stress-Strain curves and suggest that the impedance of a binder system can be altered by means of a magnetic field.

  4. Sleep monitoring sensor using flexible metal strain gauge

    Science.gov (United States)

    Kwak, Yeon Hwa; Kim, Jinyong; Kim, Kunnyun

    2018-05-01

    This paper presents a sleep monitoring sensor based on a flexible metal strain gauge. As quality of life has improved, interest in sleep quality, and related products, has increased. In this study, unlike a conventional single sensor based on a piezoelectric material, a metal strain gauge-based array sensor based on polyimide and nickel chromium (NiCr) is applied to provide movement direction, respiration, and heartbeat data as well as contact-free use by the user during sleeping. Thin-film-type resistive strain gage sensors are fabricated through the conventional flexible printed circuit board (FPCB) process, which is very useful for commercialization. The measurement of movement direction and respiratory rate during sleep were evaluated, and the heart rate data were compared with concurrent electrocardiogram (ECG) data. An algorithm for analyzing sleep data was developed using MATLAB, and the error rate was 4.2% when compared with ECG for heart rate.

  5. Strain measurements of nuclear power plant steam generator antiseismic supports

    International Nuclear Information System (INIS)

    Kulichevsky, R.

    1997-01-01

    The nuclear power plants steam generators have different types of structural supports. One of these types are the antiseismic supports, which are intended to be under stress only if a seismic event takes place. Nevertheless, the antiseismic supports lugs, that are welded to the steam generator vessel, are subjected to thermal fatigue because of the temperature cycles related with the shut down and start up operations performed during the life of the nuclear power plant. In order to evaluate the stresses that the lugs are subjected to, several strain gages were welded on two supports lugs, positioned at two heights of one of the Embalse nuclear power plant steam generators. In this paper, the instrumentation used and the strain measurements obtained during two start up operations are presented. The influence of the plant start up operation parameters on the lugs strain evolution is also analyzed. (author) [es

  6. High pressure semiconductor physics I

    CERN Document Server

    Willardson, R K; Paul, William; Suski, Tadeusz

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tra...

  7. Introduction to cathodoluminescence in semiconductors

    International Nuclear Information System (INIS)

    Dussac, M.

    1985-01-01

    The use of cathodoluminescence in a scanning electron microscope leads to acquire a spectrum in a place of the sample surface, or to register the intensity profile of a special emission band along a scanning line, or also to realize a map of the irradiated sample. Composition variations can then, at ambient temperature, be determined, also defects can be shown, together with grain joints and dislocations, radiative and non radiative regions can be distinguished and, at low temperature, elementary processes of luminescence can be studied and impurities identified in semiconductors. Through this analysis method is applicable to every insulating or semiconductor material (that is to say to every material having a gap), in this article only crystalline semi-conductor will be studied [fr

  8. Catalysts, Protection Layers, and Semiconductors

    DEFF Research Database (Denmark)

    Chorkendorff, Ib

    2015-01-01

    Hydrogen is the simplest solar fuel to produce and in this presentation we shall give a short overview of the pros and cons of various tandem devices [1]. The large band gap semiconductor needs to be in front, but apart from that we can chose to have either the anode in front or back using either...... acid or alkaline conditions. Since most relevant semiconductors are very prone to corrosion the advantage of using buried junctions and using protection layers offering shall be discussed [2-4]. Next we shall discuss the availability of various catalysts for being coupled to these protections layers...... and how their stability may be evaluated [5, 6]. Examples of half-cell reaction using protection layers for both cathode and anode will be discussed though some of recent examples under both alkaline and acidic conditions. Si is a very good low band gap semiconductor and by using TiO2 as a protection...

  9. High mobility emissive organic semiconductor

    Science.gov (United States)

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

  10. Thiophene-Based Organic Semiconductors.

    Science.gov (United States)

    Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

    2017-10-24

    Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

  11. The application of a 3 dimensional image scanner to the strain measurement

    International Nuclear Information System (INIS)

    Mazda, Taiji; Ogawa, Hiroshi; Suzuki, Michiaki; Nakano, Yasuo.

    1993-01-01

    A large strain measuring method for a laminated seismic isolation rubber, which will be introduced to reactor buildings of the Demonstration Fast Breeder Reactor (DFBR), was developed. With using strain gages, it is difficult to measure the large strain under the large displacement condition. With using the optical instruments, it is also impossible to measure the strain of a 3 dimensional object. We developed a new measuring method in which strain is calculated from a 3 dimensional deformation with using a 3 dimensional image scanner. This method is noncontact measuring method, and it can measure the strain of a 3 dimensional object under the large deformation. This work is one part of 'The Development of FBR Seismic Isolation system' operated by Central Research Institute of Electric Power Industry. (author)

  12. Organic semiconductors in sensor applications

    CERN Document Server

    Malliaras, George; Owens, Róisín

    2008-01-01

    Organic semiconductors offer unique characteristics such as tunability of electronic properties via chemical synthesis, compatibility with mechanically flexible substrates, low-cost manufacturing, and facile integration with chemical and biological functionalities. These characteristics have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this rapidly emerging field by discussing both optical and electrical sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques to enhance specificity are outlined, and models for the sensor response are described.

  13. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  14. Introduction to semiconductor manufacturing technology

    CERN Document Server

    2012-01-01

    IC chip manufacturing processes, such as photolithography, etch, CVD, PVD, CMP, ion implantation, RTP, inspection, and metrology, are complex methods that draw upon many disciplines. [i]Introduction to Semiconductor Manufacturing Technologies, Second Edition[/i] thoroughly describes the complicated processes with minimal mathematics, chemistry, and physics; it covers advanced concepts while keeping the contents accessible to readers without advanced degrees. Designed as a textbook for college students, this book provides a realistic picture of the semiconductor industry and an in-depth discuss

  15. Wide gap semiconductor microwave devices

    International Nuclear Information System (INIS)

    Buniatyan, V V; Aroutiounian, V M

    2007-01-01

    A review of properties of wide gap semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, GaN and AlGaN/GaN that are relevant to electronic, optoelectronic and microwave applications is presented. We discuss the latest situation and perspectives based on experimental and theoretical results obtained for wide gap semiconductor devices. Parameters are taken from the literature and from some of our theoretical works. The correspondence between theoretical results and parameters of devices is critically analysed. (review article)

  16. Detection of radioactivity by semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1991-01-01

    The class of detectors discussed in this chapter has a responsive component involving a diode, a junction between two types of semiconductor materials. Although diode detectors are not particularly efficient in counting radioactive emissions, they are superior to other commercially available detectors in spectroscopy. Consequently, diode detectors are used extensively for quanlitative purposes and for quantitative purposes when mixtures of radionuclides are present, not the usual situation with biological or medical research. Topics addressed in this chapter are as follows: Band Theory; Semiconductors and Junctions; and Radiation Detectors. 6 refs., 14 figs

  17. Modeling of semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  18. Semiconductor X-ray spectrometers

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1978-02-01

    An outline is given of recent developments in particle and photon induced x-ray fluorescence (XRF) analysis. Following a brief description of the basic mechanism of semiconductor detector operation a comparison is made between semiconductor detectors, scintillators and gas filled proportional devices. Detector fabrication and cryostat design are described in more detail and the effects of various device parameters on system performance, such as energy resolution, count rate capability, efficiency, microphony, etc. are discussed. The main applications of these detectors in x-ray fluorescence analysis, electron microprobe analysis, medical and pollution studies are reviewed

  19. Integrating magnetism into semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Zakharchenya, Boris P; Korenev, Vladimir L [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2005-06-30

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  20. Integrating magnetism into semiconductor electronics

    International Nuclear Information System (INIS)

    Zakharchenya, Boris P; Korenev, Vladimir L

    2005-01-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  1. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  2. Waveguide based external cavity semiconductor lasers

    NARCIS (Netherlands)

    Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

    2012-01-01

    We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

  3. Influence of phonons on semiconductor quantum emission

    Energy Technology Data Exchange (ETDEWEB)

    Feldtmann, Thomas

    2009-07-06

    A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semiconductor systems is presented. The theory is applied to study quantum dots and phonon-assisted luminescence in bulk semiconductors and heterostructures. (orig.)

  4. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  5. Fundamentals of semiconductors physics and materials properties

    CERN Document Server

    Yu, Peter Y

    2005-01-01

    Provides detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. This textbook emphasizes understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors and features an extensive collection of tables of material parameters, figures, and problems.

  6. Nuclear radiation detection by a variband semiconductor

    International Nuclear Information System (INIS)

    Volkov, A.S.

    1981-01-01

    Possibilities of using a variband semiconductor for detecting nuclear radiations are considered. It is shown that the variaband quasielectric field effectively collects charges induced by a nuclear particle only at a small mean free path in the semiconductor (up to 100 μm), the luminescence spectrum of the variband semiconductor when a nuclear particle gets into it, in principle, permits to determine both the energy and mean free path in the semiconductor (even at large mean free paths) [ru

  7. Ultrafast THz Saturable Absorption in Doped Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, Matthias C.

    2011-01-01

    We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.......We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields....

  8. Laser semiconductor diode integrated with frequency doubler

    International Nuclear Information System (INIS)

    Tighineanu, I.; Dorogan, V.; Suruceanu, G.

    2003-01-01

    The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

  9. Diode having trenches in a semiconductor region

    Energy Technology Data Exchange (ETDEWEB)

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  10. Direct solar pumping of semiconductor lasers: A feasibility study

    Science.gov (United States)

    Anderson, Neal G.

    1992-01-01

    This report describes results of NASA Grant NAG-1-1148, entitled Direct Solar Pumping of Semiconductor Lasers: A Feasibility Study. The goals of this study were to provide a preliminary assessment of the feasibility of pumping semiconductor lasers in space with directly focused sunlight and to identify semiconductor laser structures expected to operate at the lowest possible focusing intensities. It should be emphasized that the structures under consideration would provide direct optical-to-optical conversion of sunlight into laser light in a single crystal, in contrast to a configuration consisting of a solar cell or storage battery electrically pumping a current injection laser. With external modulation, such lasers could perhaps be efficient sources for intersatellite communications. We proposed specifically to develop a theoretical model of semiconductor quantum-well lasers photopumped by a broadband source, test it against existing experimental data where possible, and apply it to estimating solar pumping requirements and identifying optimum structures for operation at low pump intensities. These tasks have been accomplished, as described in this report of our completed project. The report is organized as follows: Some general considerations relevant to the solar-pumped semiconductor laser problem are discussed in Section 2, and the types of structures chosen for specific investigation are described. The details of the laser model we developed for this work are then outlined in Section 3. In Section 4, results of our study are presented, including designs for optimum lattice-matched and strained-layer solar-pumped quantum-well lasers and threshold pumping estimates for these structures. It was hoped at the outset of this work that structures could be identified which could be expected to operate continuously at solar photoexcitation intensities of several thousand suns, and this indeed turned out to be the case as described in this section. Our project is

  11. Force Reconstruction from Ejection Tests of Stores from Aircraft Used for Model Predictions and Missing/Bad Gages

    Energy Technology Data Exchange (ETDEWEB)

    Ross, Michael; Cap, Jerome S.; Starr, Michael J.; Urbina, Angel; Brink, Adam Ray

    2015-12-01

    One of the more severe environments for a store on an aircraft is during the ejection of the store. During this environment it is not possible to instrument all component responses, and it is also likely that some instruments may fail during the environment testing. This work provides a method for developing these responses from failed gages and uninstrumented locations. First, the forces observed by the store during the environment are reconstructed. A simple sampling method is used to reconstruct these forces given various parameters. Then, these forces are applied to a model to generate the component responses. Validation is performed on this methodology.

  12. Improving snow water equivalent simulations in an alpine basin using blended gage precipitation and snow pillow measurements

    Science.gov (United States)

    Sohrabi, M.; Safeeq, M.; Conklin, M. H.

    2017-12-01

    Snowpack is a critical freshwater reservoir that sustains ecosystem, natural habitat, hydropower, agriculture, and urban water supply in many areas around the world. Accurate estimation of basin scale snow water equivalent (SWE), through both measurement and modeling, has been significantly recognized to improve regional water resource management. Recent advances in remote data acquisition techniques have improved snow measurements but our ability to model snowpack evolution is largely hampered by poor knowledge of inherently variable high-elevation precipitation patterns. For a variety of reasons, majority of the precipitation gages are located in low and mid-elevation range and function as drivers for basin scale hydrologic modeling. Here, we blend observed gage precipitation from low and mid-elevation with point observations of SWE from high-elevation snow pillow into a physically based snow evolution model (SnowModel) to better represent the basin-scale precipitation field and improve snow simulations. To do this, we constructed two scenarios that differed in only precipitation. In WTH scenario, we forced the SnowModel using spatially distributed gage precipitation data. In WTH+SP scenario, the model was forced with spatially distributed precipitation data derived from gage precipitation along with observed precipitation from snow pillows. Since snow pillows do not directly measure precipitation, we uses positive change in SWE as a proxy for precipitation. The SnowModel was implemented at daily time step and 100 m resolution for the Kings River Basin, USA over 2000-2014. Our results show an improvement in snow simulation under WTH+SP as compared to WTH scenario, which can be attributed to better representation in high-elevation precipitation patterns under WTH+SP. The average Nash Sutcliffe efficiency over all snow pillow and course sites was substantially higher for WTH+SP (0.77) than for WTH scenario (0.47). The maximum difference in observed and simulated

  13. Direct measurements of wall shear stress by buried wire gages in a shock-wave boundary-layer interaction region

    Science.gov (United States)

    Murthy, V. S.; Rose, W. C.

    1977-01-01

    Detailed measurements of wall shear stress (skin friction) were made with specially developed buried wire gages in the interaction regions of a Mach 2.9 turbulent boundary layer with externally generated shocks. Separation and reattachment points inferred by these measurements support the findings of earlier experiments which used a surface oil flow technique and pitot profile measurements. The measurements further indicate that the boundary layer tends to attain significantly higher skin-friction values downstream of the interaction region as compared to upstream. Comparisons between measured wall shear stress and published results of some theoretical calculation schemes show that the general, but not detailed, behavior is predicted well by such schemes.

  14. Automation and Integration in Semiconductor Manufacturing

    OpenAIRE

    Liao, Da-Yin

    2010-01-01

    Semiconductor automation originates from the prevention and avoidance of frauds in daily fab operations. As semiconductor technology and business continuously advance and grow, manufacturing systems must aggressively evolve to meet the changing technical and business requirements in this industry. Semiconductor manufacturing has been suffering pains from islands of automation. The problems associated with these systems are limited

  15. Semiconductor nanostructures for infrared applications

    NARCIS (Netherlands)

    Zurauskiene, N.; Asmontas, S.; Dargys, A.; Kundrotas, J.; Janssen, G.; Goovaerts, E.; Marcinkevicius, S.; Koenraad, P.M.; Wolter, J.H.; Leon, R.

    2004-01-01

    We present the results of time-resolved photoluminescence (TRPL) and optically detected microwave resonance (ODMR) spectroscopy investigations of semiconductor quantum dots and quantum wells. The ODMR spectra of InAs/GaAs QDs were detected via modulation of the total intensity of the QDs emission

  16. A Brief History of ... Semiconductors

    Science.gov (United States)

    Jenkins, Tudor

    2005-01-01

    The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

  17. Semiconductor radiation detectors: device physics

    National Research Council Canada - National Science Library

    Lutz, Gerhard

    1999-01-01

    ..., including nuclear physics, elementary particle physics, optical and x-ray astronomy, medicine, and materials testing - and the number of applications is growing continually. Closely related, and initiated by the application of semiconductors, is the development of low-noise low-power integrated electronics for signal readout. The success of semicond...

  18. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

    2000-01-01

    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

  19. Ultrafast Spectroscopy of Semiconductor Devices

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Hvam, Jørn Marcher

    1999-01-01

    In this work we present an experimental technique for investigating ultrafast carrier dynamics in semiconductor optical amplifiers at room temperature. These dynamics, influenced by carrier heating, spectral hole-burning and two-photon absorption, are very important for device applications in inf...

  20. Radiation damage in semiconductor detectors

    International Nuclear Information System (INIS)

    Kraner, H.W.

    1981-12-01

    A survey is presented of the important damage-producing interactions in semiconductor detectors and estimates of defect numbers are made for MeV protons, neutrons and electrons. Damage effects of fast neutrons in germanium gamma ray spectrometers are given in some detail. General effects in silicon detectors are discussed and damage constants and their relationship to leakage current is introduced

  1. Linewidth broadening in a distributed feedback laser integrated with a semiconductor optical amplifier

    DEFF Research Database (Denmark)

    Champagne, A.; Camel, J.; Maciejko, R.

    2002-01-01

    The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A modified expression for the linewidth in the case of antireflection-coated SOA output facets is derived and ...

  2. Spectral characteristics of DFB lasers in presence of a semiconductor optical amplifier

    DEFF Research Database (Denmark)

    Champagne, A.; Camel, J.; Maciejko, R.

    2002-01-01

    The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A numerical model combining finite element calculations in the transverse x - y plane and a longitudinal model...

  3. Analysis of GAGE, NY-ESO-1 and SP17 cancer/testis antigen expression in early stage non-small cell lung carcinoma

    International Nuclear Information System (INIS)

    Gjerstorff, Morten F; Pøhl, Mette; Olsen, Karen E; Ditzel, Henrik J

    2013-01-01

    The unique expression pattern and immunogenic properties of cancer/testis antigens make them ideal targets for immunotherapy of cancer. The MAGE-A3 cancer/testis antigen is frequently expressed in non-small cell lung cancer (NSCLC) and vaccination with MAGE-A3 in patients with MAGE-A3-positive NSCLC has shown promising results. However, little is known about the expression of other cancer/testis antigens in NSCLC. In the present study the expression of cancer/testis antigens GAGE, NY-ESO-1 and SP17 was investigated in patients with completely resected, early stage, primary NSCLC. Tumor biopsies from normal lung tissue and from a large cohort (n = 169) of NSCLC patients were examined for GAGE, NY-ESO-1 and SP17 protein expression by immunohistochemical analysis. The expression of these antigens was further matched to clinical and pathological features using univariate cox regression analysis. GAGE and NY-ESO-1 cancer/testis antigens were not expressed in normal lung tissue, while SP17 was expressed in ciliated lung epithelia. The frequency of GAGE, NY-ESO-1 and SP17 expression in NSCLC tumors were 26.0% (44/169), 11.8% (20/169) and 4.7% (8/169), respectively, and 33.1% (56/169) of the tumors expressed at least one of these antigens. In general, the expression of GAGE, NY-ESO-1 and SP17 was not significantly associated with a specific histotype (adenocarcinoma vs. squamous cell carcinoma), but high-level GAGE expression (>50%) was more frequent in squamous cell carcinoma (p = 0.02). Furthermore, the frequency of GAGE expression was demonstrated to be significantly higher in stage II-IIIa than stage I NSCLC (17.0% vs. 35.8%; p = 0.02). Analysis of the relation between tumor expression of GAGE and NY-ESO-1 and survival endpoints revealed no significant associations. Our study demonstrates that GAGE, NY-ESO-1 and SP17 cancer/testis antigens are candidate targets for immunotherapy of NSCLC and further suggest that multi-antigen vaccines may be beneficial

  4. Transient photoconductivity in amorphous semiconductors

    International Nuclear Information System (INIS)

    Mpawenayo, P.

    1997-07-01

    Localized states in amorphous semiconductors are divided in disorder induced shallow trap levels and dangling bonds deep states. Dangling bonds are assumed here to be either neutral or charged and their energy distribution is a single gaussian. Here, it is shown analytically that transient photocurrent in amorphous semiconductors is fully controlled by charge carriers transitions between localized states for one part and tunneling hopping carriers on the other. Localized dangling bonds deep states act as non radiative recombination centres, while hopping tunnelling is assisted by the Coulomb interaction between defects sites. The half-width of defects distribution is the disorder parameter that determines the carrier hopping time between defects sites. The macroscopic time that explains the long decay response times observed will all types of amorphous semiconductors is duly thought to be temperature dependent. Basic equations developed by Longeaud and Kleider are solved for the general case of a semiconductor after photo-generation. It turns out that the transient photoconductivity decay has two components; one with short response times from carriers trap-release transitions between shallow levels and extended states and a hopping component made of inter-dependent exponentials whose time constants span in larger ranges depending on disorder. The photoconductivity hopping component appears as an additional term to be added to photocurrents derived from existing models. The results of the present study explain and complete the power law decay derived in the multiple trapping models developed 20 years ago only in the approximation of the short response time regime. The long response time regime is described by the hopping macroscopic time. The present model is verified for all samples of amorphous semiconductors known so far. Finally, it is proposed to improved the modulated photoconductivity calculation techniques by including the long-lasting hopping dark documents

  5. SPICE compatible analytical electron mobility model for biaxial strained-Si-MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Chaudhry, Amit; Sangwan, S. [UIET, Panjab University, Chandigarh (India); Roy, J. N., E-mail: amit_chaudhry01@yahoo.com [Solar Semiconductro Pvt. Ltd, Hyderabad (India)

    2011-05-15

    This paper describes an analytical model for bulk electron mobility in strained-Si layers as a function of strain. Phonon scattering, columbic scattering and surface roughness scattering are included to analyze the full mobility model. Analytical explicit calculations of all of the parameters to accurately estimate the electron mobility have been made. The results predict an increase in the electron mobility with the application of biaxial strain as also predicted from the basic theory of strain physics of metal oxide semiconductor (MOS) devices. The results have also been compared with numerically reported results and show good agreement. (semiconductor devices)

  6. SPICE compatible analytical electron mobility model for biaxial strained-Si-MOSFETs

    International Nuclear Information System (INIS)

    Chaudhry, Amit; Sangwan, S.; Roy, J. N.

    2011-01-01

    This paper describes an analytical model for bulk electron mobility in strained-Si layers as a function of strain. Phonon scattering, columbic scattering and surface roughness scattering are included to analyze the full mobility model. Analytical explicit calculations of all of the parameters to accurately estimate the electron mobility have been made. The results predict an increase in the electron mobility with the application of biaxial strain as also predicted from the basic theory of strain physics of metal oxide semiconductor (MOS) devices. The results have also been compared with numerically reported results and show good agreement. (semiconductor devices)

  7. Piezoelectric effect in strained quantum wells

    International Nuclear Information System (INIS)

    Dang, L.S.; Andre, R.; Cibert, J.

    1995-01-01

    This paper describes some physical aspects of the piezoelectric effect which takes place in strained semiconductor heterostructures grown along a polar axis. First we show how piezoelectric fields can be accurately measured by optical spectroscopy. Then we discuss about the origin of the non-linear piezoelectric effect reported recently for CdTe, and maybe for InAs as well. Finally we compare excitonic effects in piezoelectric and non-piezoelectric quantum wells. (orig.)

  8. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    International Nuclear Information System (INIS)

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

  9. Semiconductor detectors in nuclear and particle physics

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1992-01-01

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups: Classical semiconductor diode detectors and semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported

  10. Semiconductor detectors in nuclear and particle physics

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1995-01-01

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups; (i) classical semiconductor diode detectors and (ii) semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported. copyright 1995 American Institute of Physics

  11. An electrically injected rolled-up semiconductor tube laser

    Energy Technology Data Exchange (ETDEWEB)

    Dastjerdi, M. H. T.; Djavid, M.; Mi, Z., E-mail: zetian.mi@mcgill.ca [Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9 (Canada)

    2015-01-12

    We have demonstrated electrically injected rolled-up semiconductor tube lasers, which are formed when a coherently strained InGaAs/InGaAsP quantum well heterostructure is selectively released from the underlying InP substrate. The device exhibits strong coherent emission in the wavelength range of ∼1.5 μm. A lasing threshold of ∼1.05 mA is measured for a rolled-up tube with a diameter of ∼5 μm and wall thickness of ∼140 nm at 80 K. The Purcell factor is estimated to be ∼4.3.

  12. Application of carbon nanotubes flexible strain sensor in smart textiles

    Directory of Open Access Journals (Sweden)

    Qiong CHENG

    2017-10-01

    Full Text Available Smart textiles have not only the necessary functions of daily wear, but also the intelligence. The focus of the current textile materials research is the selection of flexible material. For flexible materials, carbon material is one of the ideal materials for preparing flexible strain gauges. The application of flexible strain sensor prepared by carbon nanotubes as a flexible material in smart textiles is the research content. The research status of carbon nanotubes flexible strain sensor is introduced from the aspects of the structure, properties and application. The characteristics and functions of flexible strain gages prepared with carbon nanotube fibers and carbon nanotube films as flexible materials are discussed in terms of selection, preparation method, performance test and application. At the same time, the advantages and disadvantages of the flexible strain sensor of carbon nanotubes are reviewed from the aspects of preparation difficulty, production cost and practical application effect. High sensitivity with high strain will be a key research direction for carbon nanotube flexible strain sensors.

  13. Strain Measurement during Stress Rupture of Composite Over-Wrapped Pressure Vessel with Fiber Bragg Gratings Sensors

    Science.gov (United States)

    Banks, Curtis E.; Grant, Joseph; Russell, Sam; Arnett, Shawn

    2008-01-01

    Fiber optic Bragg gratings were used to measure strain fields during Stress Rupture (SSM) test of Kevlar Composite Over-Wrapped Pressure Vessels (COPV). The sensors were embedded under the over-wrapped attached to the liner released from the Kevlar and attached to the Kevlar released from the liner. Additional sensors (foil gages and fiber bragg gratings) were surface mounted on the COPY liner.

  14. Materials science and technology strained-layer superlattices materials science and technology

    CERN Document Server

    Pearsall, Thomas P; Willardson, R K; Pearsall, Thomas P

    1990-01-01

    The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting ...

  15. Transversal light forces in semiconductors

    CERN Document Server

    Lindberg, M

    2003-01-01

    The transversal light force is a well established effect in atomic and molecular systems that are exposed to spatially inhomogeneous light fields. In this paper it is shown theoretically that in an excited semiconductor, containing an electron-hole plasma or excitons, a similar light force exists, if the semiconductor is exposed to an ultrashort spatially inhomogeneous light field. The analysis is based on the equations of motion for the Wigner distribution functions of charge carrier populations and interband polarizations. The results show that, while the light force on the electron-hole plasma or the excitons does exist, its effects on the kinetic behaviour of the electron-hole plasma or the excitons are different compared to the situation in an atomic or molecular system. A detailed analysis presented here traces this difference back to the principal differences between atoms and molecules on the one hand and electron-hole plasmas or excitons on the other hand.

  16. Semiconductor electrolyte photovoltaic energy converter

    Science.gov (United States)

    Anderson, W. W.; Anderson, L. B.

    1975-01-01

    Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

  17. Hypersonic modes in nanophononic semiconductors.

    Science.gov (United States)

    Hepplestone, S P; Srivastava, G P

    2008-09-05

    Frequency gaps and negative group velocities of hypersonic phonon modes in periodically arranged composite semiconductors are presented. Trends and criteria for phononic gaps are discussed using a variety of atomic-level theoretical approaches. From our calculations, the possibility of achieving semiconductor-based one-dimensional phononic structures is established. We present results of the location and size of gaps, as well as negative group velocities of phonon modes in such structures. In addition to reproducing the results of recent measurements of the locations of the band gaps in the nanosized Si/Si{0.4}Ge{0.6} superlattice, we show that such a system is a true one-dimensional hypersonic phononic crystal.

  18. Dielectric function of semiconductor superlattice

    International Nuclear Information System (INIS)

    Qin Guoyi.

    1990-08-01

    We present a calculation of the dielectric function for semiconductor GaAs/Ga 1-x Al x As superlattice taking account of the extension of the electron envelope function and the difference of both the dielectric constant and width between GaAs and Ga 1-x Al x As layers. In the appropriate limits, our results exactly reduce to the well-known results of the quasi two-dimensional electron gas obtained by Lee and Spector and of the period array of two-dimensional electron layers obtained by Das Sarma and Quinn. By means of the dielectric function of the superlattice, the dispersion relation of the collective excitation and the screening property of semiconductor superlattice are discussed and compared with the results of the quasi two-dimensional system and with the results of the periodic array of the two-dimensional electron layers. (author). 4 refs, 3 figs

  19. Spectroscopic analysis of optoelectronic semiconductors

    CERN Document Server

    Jimenez, Juan

    2016-01-01

    This book deals with standard spectroscopic techniques which can be used to analyze semiconductor samples or devices, in both, bulk, micrometer and submicrometer scale. The book aims helping experimental physicists and engineers to choose the right analytical spectroscopic technique in order to get specific information about their specific demands. For this purpose, the techniques including technical details such as apparatus and probed sample region are described. More important, also the expected outcome from experiments is provided. This involves also the link to theory, that is not subject of this book, and the link to current experimental results in the literature which are presented in a review-like style. Many special spectroscopic techniques are introduced and their relationship to the standard techniques is revealed. Thus the book works also as a type of guide or reference book for people researching in optical spectroscopy of semiconductors.

  20. Efficient Spin Injection into Semiconductor

    International Nuclear Information System (INIS)

    Nahid, M.A.I.

    2010-06-01

    Spintronic research has made tremendous progress nowadays for making future devices obtain extra advantages of low power, and faster and higher scalability compared to present electronic devices. A spintronic device is based on the transport of an electron's spin instead of charge. Efficient spin injection is one of the very important requirements for future spintronic devices. However, the effective spin injection is an exceedingly difficult task. In this paper, the importance of spin injection, basics of spin current and the essential requirements of spin injection are illustrated. The experimental technique of electrical spin injection into semiconductor is also discussed based on the experimental experience. The electrical spin injection can easily be implemented for spin injection into any semiconductor. (author)

  1. Compound semiconductor optical waveguide switch

    Science.gov (United States)

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  2. Semiconductors put spin in spintronics

    International Nuclear Information System (INIS)

    Weiss, Dieter

    2000-01-01

    Electrons and holes, which carry the current in semiconductor devices, are quantum-mechanical objects characterized by a set of quantum numbers - the band index, the wave-vector (which is closely related to the electron or hole velocity) and spin. The spin, however, is one of the strangest properties of particles. In simple terms, we can think of the spin as an internal rotation of the electron, but it has no classical counterpart. The spin is connected to a quantized magnetic moment and hence acts as a microscopic magnet. Thus the electron spin can adopt one of two directions (''up'' or ''down'') in a magnetic field. The spin plays no role in conventional electronics and the current in any semiconductor device is made up of a mixture of electrons with randomly oriented spins. However, a new range of electronic devices that transport the spin of the electrons, in addition to their charge, is being developed. But the biggest obstacle to making practical ''spin electronic'' or ''spintronic'' devices so far has been finding a way of injecting spin-polarized electrons or holes into the semiconductor and then detecting them. Recently a team of physicists from the University of Wuerzburg in Germany, and also a collaboration of researchers from Tohoku University in Japan and the University of California at Santa Barbara, have found a way round these problems using either semi-magnetic or ferromagnetic semiconductors as ''spin aligners'' (R Fiederling et al. 1999 Nature 402 787; Y Ohno et al. 1999 Nature 402 790). In this article the author presents the latest breakthrough in spintronics research. (UK)

  3. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  4. Ballistic superconductivity in semiconductor nanowires

    Science.gov (United States)

    Zhang, Hao; Gül, Önder; Conesa-Boj, Sonia; Nowak, Michał P.; Wimmer, Michael; Zuo, Kun; Mourik, Vincent; de Vries, Folkert K.; van Veen, Jasper; de Moor, Michiel W. A.; Bommer, Jouri D. S.; van Woerkom, David J.; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P.A.M.; Quintero-Pérez, Marina; Cassidy, Maja C.; Koelling, Sebastian; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P.

    2017-01-01

    Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices. PMID:28681843

  5. Radiation tolerance of amorphous semiconductors

    International Nuclear Information System (INIS)

    Nicolaides, R.V.; DeFeo, S.; Doremus, L.W.

    1976-01-01

    In an attempt to determine the threshold radiation damage in amorphous semiconductors, radiation tests were performed on amorphous semiconductor thin film materials and on threshold and memory devices. The influence of flash x-rays and neutron radiation upon the switching voltages, on- and off-state characteristics, dielectric response, optical transmission, absorption band edge and photoconductivity were measured prior to, during and following irradiation. These extensive tests showed the high radiation tolerance of amorphous semiconductor materials. Electrical and optical properties, other than photoconductivity, have a neutron radiation tolerance threshold above 10 17 nvt in the steady state and 10 14 nvt in short (50 μsec to 16 msec) pulses. Photoconductivity increases by 1 1 / 2 orders of magnitude at the level of 10 14 nvt (short pulses of 50 μsec). Super flash x-rays up to 5000 rads (Si), 20 nsec, do not initiate switching in off-state samples which are voltage biased up to 90 percent of the threshold voltage. Both memory and threshold amorphous devices are capable of switching on and off during nuclear radiation transients at least as high as 2 x 10 14 nvt in 50 μsec pulses

  6. Thienoacene-based organic semiconductors.

    Science.gov (United States)

    Takimiya, Kazuo; Shinamura, Shoji; Osaka, Itaru; Miyazaki, Eigo

    2011-10-11

    Thienoacenes consist of fused thiophene rings in a ladder-type molecular structure and have been intensively studied as potential organic semiconductors for organic field-effect transistors (OFETs) in the last decade. They are reviewed here. Despite their simple and similar molecular structures, the hitherto reported properties of thienoacene-based OFETs are rather diverse. This Review focuses on four classes of thienoacenes, which are classified in terms of their chemical structures, and elucidates the molecular electronic structure of each class. The packing structures of thienoacenes and the thus-estimated solid-state electronic structures are correlated to their carrier transport properties in OFET devices. With this perspective of the molecular structures of thienoacenes and their carrier transport properties in OFET devices, the structure-property relationships in thienoacene-based organic semiconductors are discussed. The discussion provides insight into new molecular design strategies for the development of superior organic semiconductors. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Identification of defects in semiconductors

    CERN Document Server

    Stavola, Michael; Weber, Eicke R; Stavola, Michael

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this traditi...

  8. The Electrical Characteristics of The N-Organic Semiconductor/P-Inorganic Semiconductor Diode

    International Nuclear Information System (INIS)

    Aydin, M. E.

    2008-01-01

    n-organic semiconductor (PEDOT) / p-inorganic semiconductor Si diode was formed by deep coating method. The method has been achieved by coating n-inorganic semiconductor PEDOT on top of p-inorganic semiconductor. The n-organic semiconductor PEDOT/ p-inorganic semiconductor diode demonstrated rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The barrier height , ideality factor values were obtained as of 0.88 eV and 1.95 respectively. The diode showed non-ideal I-V behavior with an ideality factor greater than unity that could be ascribed to the interfacial layer

  9. New Icosahedral Boron Carbide Semiconductors

    Science.gov (United States)

    Echeverria Mora, Elena Maria

    Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

  10. Conductivity in transparent oxide semiconductors.

    Science.gov (United States)

    King, P D C; Veal, T D

    2011-08-24

    Despite an extensive research effort for over 60 years, an understanding of the origins of conductivity in wide band gap transparent conducting oxide (TCO) semiconductors remains elusive. While TCOs have already found widespread use in device applications requiring a transparent contact, there are currently enormous efforts to (i) increase the conductivity of existing materials, (ii) identify suitable alternatives, and (iii) attempt to gain semiconductor-engineering levels of control over their carrier density, essential for the incorporation of TCOs into a new generation of multifunctional transparent electronic devices. These efforts, however, are dependent on a microscopic identification of the defects and impurities leading to the high unintentional carrier densities present in these materials. Here, we review recent developments towards such an understanding. While oxygen vacancies are commonly assumed to be the source of the conductivity, there is increasing evidence that this is not a sufficient mechanism to explain the total measured carrier concentrations. In fact, many studies suggest that oxygen vacancies are deep, rather than shallow, donors, and their abundance in as-grown material is also debated. We discuss other potential contributions to the conductivity in TCOs, including other native defects, their complexes, and in particular hydrogen impurities. Convincing theoretical and experimental evidence is presented for the donor nature of hydrogen across a range of TCO materials, and while its stability and the role of interstitial versus substitutional species are still somewhat open questions, it is one of the leading contenders for yielding unintentional conductivity in TCOs. We also review recent work indicating that the surfaces of TCOs can support very high carrier densities, opposite to the case for conventional semiconductors. In thin-film materials/devices and, in particular, nanostructures, the surface can have a large impact on the total

  11. Nanocomposite Strain Gauges Having Small TCRs

    Science.gov (United States)

    Gregory, Otto; Chen, Ximing

    2009-01-01

    Ceramic strain gauges in which the strain-sensitive electrically conductive strips made from nanocomposites of noble metal and indium tin oxide (ITO) are being developed for use in gas turbine engines and other power-generation systems in which gas temperatures can exceed 1,500 F (about 816 C). In general, strain gauges exhibit spurious thermally induced components of response denoted apparent strain. When temperature varies, a strain-gauge material that has a nonzero temperature coefficient of resistance (TCR) exhibits an undesired change in electrical resistance that can be mistaken for the change in resistance caused by a change in strain. It would be desirable to formulate straingauge materials having TCRs as small as possible so as to minimize apparent strain. Most metals exhibit positive TCRs, while most semiconductors, including ITO, exhibit negative TCRs. The present development is based on the idea of using the negative TCR of ITO to counter the positive TCRs of noble metals and of obtaining the benefit of the ability of both ITO and noble metals to endure high temperatures. The noble metal used in this development thus far has been platinum. Combinatorial libraries of many ceramic strain gauges containing nanocomposites of various proportions of ITO and platinum were fabricated by reactive co-sputtering from ITO and platinum targets onto alumina- and zirconia-based substrates mounted at various positions between the targets.

  12. Distinct GAGE and MAGE-A expression during early human development indicate specific roles in lineage differentiation

    DEFF Research Database (Denmark)

    Gjerstorff, Morten; Harkness, Linda; Kassem, Moustapha

    2008-01-01

    BACKGROUND: Expression of cancer/testis-associated proteins (CTAs) has traditionally been considered to be restricted to germ cells in normal tissues and to different types of malignancies. We have evaluated the potential role of CTAs in early human development. METHODS: Using immunohistochemistry...... and RT-PCR, we investigated the expression of CTAs in differentiated human embryonic stem cells (hESC) and in late embryos and early fetuses. RESULTS: We found that melanoma antigen A (MAGE-A) family members were expressed during differentiation of hESC to embryoid bodies and in teratomas, and overlapped...... with expression of the neuroectodermal markers beta-tubulin 3, Pax6 and nestin. A widespread expression of MAGE-A was also observed in neurons of the early developing central nervous system and peripheral nerves. G antigen (GAGE) expression was present in the early ectoderm of embryos, including cells...

  13. Footprints of phineas gage: Historical beginnings on the origins of brain and behavior and the birth of cerebral localizationism

    Directory of Open Access Journals (Sweden)

    Bhaskara P Shelley

    2016-01-01

    Full Text Available The intellectual revolution led by ancient Greek philosophers and physicians witnessed the extraordinary evolution of the birth of neuroscience from speculations of cardiocentrism (Aristotelism and encephalocentrism (Galenism. Later further development of neurosciences was hallmarked by the development of anatomic theories of phrenology by the German physician Franz Joseph Gall in 1796. Although phrenology was a pseudoscience, it was Gall who laid the foundations for the subsequent biologically based doctrine of brain behavior localization. The amazing story of Phineas Gage is a classic case in the nineteenth-century neurosciences literature that played a pivotal role in the concept of cerebral localizationism, a theory that moved beyond phrenology. This iconic case marked the historical beginnings of brain origins of human behavior and elucidated a link between brain trauma, prefrontal brain damage and personality change.

  14. Roadmap on semiconductor-cell biointerfaces

    Science.gov (United States)

    Tian, Bozhi; Xu, Shuai; Rogers, John A.; Cestellos-Blanco, Stefano; Yang, Peidong; Carvalho-de-Souza, João L.; Bezanilla, Francisco; Liu, Jia; Bao, Zhenan; Hjort, Martin; Cao, Yuhong; Melosh, Nicholas; Lanzani, Guglielmo; Benfenati, Fabio; Galli, Giulia; Gygi, Francois; Kautz, Rylan; Gorodetsky, Alon A.; Kim, Samuel S.; Lu, Timothy K.; Anikeeva, Polina; Cifra, Michal; Krivosudský, Ondrej; Havelka, Daniel; Jiang, Yuanwen

    2018-05-01

    This roadmap outlines the role semiconductor-based materials play in understanding the complex biophysical dynamics at multiple length scales, as well as the design and implementation of next-generation electronic, optoelectronic, and mechanical devices for biointerfaces. The roadmap emphasizes the advantages of semiconductor building blocks in interfacing, monitoring, and manipulating the activity of biological components, and discusses the possibility of using active semiconductor-cell interfaces for discovering new signaling processes in the biological world.

  15. Influence of the Testing Gage Length on the Strength, Young's Modulus and Weibull Modulus of Carbon Fibres and Glass Fibres

    Directory of Open Access Journals (Sweden)

    Luiz Claudio Pardini

    2002-10-01

    Full Text Available Carbon fibres and glass fibres are reinforcements for advanced composites and the fiber strength is the most influential factor on the strength of the composites. They are essentially brittle and fail with very little reduction in cross section. Composites made with these fibres are characterized by a high strength/density ratio and their properties are intrisically related to their microstructure, i.e., amount and orientation of the fibres, surface treatment, among other factors. Processing parameters have an important role in the fibre mechanical behaviour (strength and modulus. Cracks, voids and impurities in the case of glass fibres and fibrillar misalignments in the case of carbon fibres are created during processing. Such inhomogeneities give rise to an appreciable scatter in properties. The most used statistical tool that deals with this characteristic variability in properties is the Weibull distribution. The present work investigates the influence of the testing gage length on the strength, Young's modulus and Weibull modulus of carbon fibres and glass fibres. The Young's modulus is calculated by two methods: (i ASTM D 3379M, and (ii interaction between testing equipment/specimen The first method resulted in a Young modulus of 183 GPa for carbon fibre, and 76 GPa for glass fibre. The second method gave a Young modulus of 250 GPa for carbon fibre and 50 GPa for glass fibre. These differences revelead differences on how the interaction specimen/testing machine can interfere in the Young modulus calculations. Weibull modulus can be a tool to evaluate the fibre's homogeneity in terms of properties and it is a good quality control parameter during processing. In the range of specimen gage length tested the Weibull modulus for carbon fibre is ~ 3.30 and for glass fibres is ~ 5.65, which indicates that for the batch of fibres tested, the glass fibre is more uniform in properties.

  16. Evaluating a slope-stability model for shallow rain-induced landslides using gage and satellite data

    Science.gov (United States)

    Yatheendradas, S.; Kirschbaum, D.; Baum, Rex L.; Godt, Jonathan W.

    2014-01-01

    Improving prediction of landslide early warning systems requires accurate estimation of the conditions that trigger slope failures. This study tested a slope-stability model for shallow rainfall-induced landslides by utilizing rainfall information from gauge and satellite records. We used the TRIGRS model (Transient Rainfall Infiltration and Grid-based Regional Slope-stability analysis) for simulating the evolution of the factor of safety due to rainfall infiltration. Using a spatial subset of a well-characterized digital landscape from an earlier study, we considered shallow failure on a slope adjoining an urban transportation roadway near the Seattle area in Washington, USA.We ran the TRIGRS model using high-quality rain gage and satellite-based rainfall data from the Tropical Rainfall Measuring Mission (TRMM). Preliminary results with parameterized soil depth values suggest that the steeper slope values in this spatial domain have factor of safety values that are extremely close to the failure limit within an extremely narrow range of values, providing multiple false alarms. When the soil depths were constrained using a back analysis procedure to ensure that slopes were stable under initial condtions, the model accurately predicted the timing and location of the landslide observation without false alarms over time for gage rain data. The TRMM satellite rainfall data did not show adequately retreived rainfall peak magnitudes and accumulation over the study period, and as a result failed to predict the landslide event. These preliminary results indicate that more accurate and higher-resolution rain data (e.g., the upcoming Global Precipitation Measurement (GPM) mission) are required to provide accurate and reliable landslide predictions in ungaged basins.

  17. Scanning electron microscopy of semiconductor materials

    International Nuclear Information System (INIS)

    Bresse, J.F.; Dupuy, M.

    1978-01-01

    The use of scanning electron microscopy in semiconductors opens up a large field of use. The operating modes lending themselves to the study of semiconductors are the induced current, cathodoluminescence and the use of the potential contrast which can also be applied very effectively to the study of the devices (planar in particular). However, a thorough knowledge of the mechanisms of the penetration of electrons, generation and recombination of generated carriers in a semiconductor is necessary in order to attain a better understanding of the operating modes peculiar to semiconductors [fr

  18. Reflection technique for thermal mapping of semiconductors

    Science.gov (United States)

    Walter, Martin J.

    1989-06-20

    Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

  19. Porous and Nanoporous Semiconductors and Emerging Applications

    Directory of Open Access Journals (Sweden)

    Helmut Föll

    2006-01-01

    Full Text Available Pores in single-crystalline semiconductors can be produced in a wide range of geometries and morphologies, including the “nanometer” regime. Porous semiconductors may have properties completely different from the bulk, and metamaterials with, for example, optical properties not encountered in natural materials are emerging. Possible applications of porous semiconductors include various novel sensors, but also more “exotic” uses as, for example, high explosives or electrodes for micro-fuel cells. The paper briefly reviews pore formation (including more applied aspects of large area etching, properties of porous semiconductors, and emerging applications.

  20. Metallurgy and purification of semiconductor materials

    International Nuclear Information System (INIS)

    Mughal, G.R.; Ali, M.M.; Ali, I.

    1996-01-01

    In this article the metallurgical aspects of semiconductor science and technology have been stressed here rather than of the physical and electronic aspect of the subject. Semiconductor technology has not merely presented the metallurgist with new challenges. The ease with which the semiconductor planes cleave make possible, the preparation and study of virgin surface. Semiconductor materials were being widely employed in the study of sub-boundaries and structures and can largely contribute to the study of certain aspects of nucleation and growth, precipitation phenomena, mechanical behaviour, in metallurgy. (A.B.)

  1. Emission and Absorption Entropy Generation in Semiconductors

    DEFF Research Database (Denmark)

    Reck, Kasper; Varpula, Aapo; Prunnila, Mika

    2013-01-01

    While emission and absorption entropy generation is well known in black bodies, it has not previously been studied in semiconductors, even though semiconductors are widely used for solar light absorption in modern solar cells [1]. We present an analysis of the entropy generation in semiconductor...... materials due to emission and absorption of electromagnetic radiation. It is shown that the emission and absorption entropy generation reduces the fundamental limit on the efficiency of any semiconductor solar cell even further than the Landsberg limit. The results are derived from purely thermodynamical...

  2. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2008-01-01

    This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

  3. Guidelines for using sensitivity analysis and auto-calibration tools for multi-gage or multi-step calibration in SWAT

    Science.gov (United States)

    Autocalibration of a water quality model such as SWAT (Soil and Water Assessment Tool) can be a powerful, labor-saving tool. When multi-gage or multi-pollutant calibration is desired, autocalibration is essential because the time involved in manual calibration becomes prohibitive. The ArcSWAT Interf...

  4. Streamflow characteristics based on data through water year 2009 for selected streamflow-gaging stations in or near Montana: Chapter E in Montana StreamStats

    Science.gov (United States)

    McCarthy, Peter M.

    2016-04-05

    Chapter E of this Scientific Investigations Report documents results from a study by the U.S. Geological Survey, in cooperation with the Montana Department of Environmental Quality and the Montana Department of Natural Resources and Conservation, to provide an update of statewide streamflow characteristics based on data through water year 2009 for streamflow-gaging stations in or near Montana. Streamflow characteristics are presented for 408 streamflow-gaging stations in Montana and adjacent areas having 10 or more years of record. Data include the magnitude and probability of annual low and high streamflow, the magnitude and probability of low streamflow for three seasons (March–June, July–October, and November–February), streamflow duration statistics for monthly and annual periods, and mean streamflows for monthly and annual periods. Streamflow is considered to be regulated at streamflow-gaging stations where dams or other large-scale human modifications affect 20 percent or more of the contributing drainage basin. Separate streamflow characteristics are presented for the unregulated and regulated periods of record for streamflow-gaging stations with sufficient data.

  5. Method of manufacturing a semiconductor sensor device and semiconductor sensor device

    NARCIS (Netherlands)

    2009-01-01

    The invention relates to a method of manufacturing a semiconductor sensor device (10) for sensing a substance comprising a plurality of mutually parallel mesa-shaped semiconductor regions (1) which are formed on a surface of a semiconductor body (11) and which are connected at a first end to a first

  6. Ultrafast laser-semiconductor interactions

    International Nuclear Information System (INIS)

    Schile, L.A.

    1996-01-01

    Studies of the ultrafast (< 100 fs) interactions of infrared, sub-100 fs laser pulses with IR, photosensitive semiconductor materials InGaAs, InSb, and HgCdTe are reported. Both the carrier dynamics and the associated Terahertz radiation from these materials are discussed. The most recent developments of femtosecond (< 100 fs) Optical Parametric Oscillators (OPO) has extended the wavelength range from the visible to 5.2 μm. The photogenerated semiconductor free carrier dynamics are determined in the 77 to 300 degrees K temperature range using the Transmission Correlation Peak (TCP) method. The electron-phonon scattering times are typically 200 - 600 fs. Depending upon the material composition and substrate on which the IR crystalline materials are deposited, the nonlinear TCP absorption gives recombination rates as fast as 10's of picoseconds. For the HgCdTe, there exists a 400 fs electron-phonon scattering process along with a much longer 3600 fs loss process. Studies of the interactions of these ultrashort laser pulses with semiconductors produce Terahertz (Thz) radiative pulses. With undoped InSb, there is a substantial change in the spectral content of this THz radiation between 80 - 260 degrees K while the spectrum of Te-doped InSb remains nearly unchanged, an effect attributed to its mobility being dominated by impurity scattering. At 80 degrees K, the terahertz radiation from undoped InSb is dependent on wavelength, with both a higher frequency spectrum and much larger amplitudes generated at longer wavelengths. No such effect is observed at 260 degrees K. Finally, new results on the dependence of the emitted THz radiation on the InSb crystal's orientation is presented

  7. Numerical method for a 2D drift diffusion model arising in strained n ...

    Indian Academy of Sciences (India)

    Abstract. This paper reports the calculation of electron transport in metal oxide semiconductor field effects transistors (MOSFETs) with biaxially tensile strained silicon channel. The calculation is formulated based on two-dimensional drift diffusion model (DDM) including strain effects. The carrier mobility dependence on the ...

  8. Numerical method for a 2D drift diffusion model arising in strained n ...

    Indian Academy of Sciences (India)

    This paper reports the calculation of electron transport in metal oxide semiconductor field effects transistors (MOSFETs) with biaxially tensile strained silicon channel. The calculation is formulated based on two-dimensional drift diffusion model (DDM) including strain effects. The carrier mobility dependence on the lateral and ...

  9. Ion implantation in semiconductor bodies

    International Nuclear Information System (INIS)

    Badawi, M.H.

    1984-01-01

    Ions are selectively implanted into layers of a semiconductor substrate of, for example, semi-insulating gallium arsenide via a photoresist implantation mask and a metallic layer of, for example, titanium disposed between the substrate surface and the photoresist mask. After implantation the mask and metallic layer are removed and the substrate heat treated for annealing purposes. The metallic layer acts as a buffer layer and prevents possible contamination of the substrate surface, by photoresist residues, at the annealing stage. Such contamination would adversely affect the electrical properties of the substrate surface, particularly gallium arsenide substrates. (author)

  10. Method of manufacturing semiconductor devices

    International Nuclear Information System (INIS)

    Sun, Y.S.E.

    1980-01-01

    A method of improving the electrical characteristics of semiconductor devices such as SCR's, rectifiers and triacs during their manufacture is described. The system consists of electron irradiation at an energy in excess of 250 KeV and most preferably between 1.5 and 12 MeV, producing an irradiation dose of between 5.10 12 and 5.10 15 electrons per sq. cm., and at a temperature in excess of 100 0 C preferably between 150 and 375 0 C. (U.K.)

  11. Physics with isotopically controlled semiconductors

    International Nuclear Information System (INIS)

    Haller, E.E.

    1994-08-01

    Control of the isotopic composition of semiconductors offers a wide range of new scientific opportunities. In this paper a number of recent results obtained with isotopically pure as well as deliberately mixed diamond and Ge bulk single crystals and Ge isotope superlattices will be reviewed. Isotopic composition affects several properties such as phonon energies, bandstructure and lattice constant in subtle but theoretically well understood ways. Large effects are observed for thermal conductivity, local vibrational modes of impurities and after neutron transmutation doping (NTD). Several experiments which could profit greatly from isotope control are proposed

  12. Theory of semiconductor laser cooling

    Science.gov (United States)

    Rupper, Greg

    Recently laser cooling of semiconductors has received renewed attention, with the hope that a semiconductor cooler might be able to achieve cryogenic temperatures. In order to study semiconductor laser cooling at cryogenic temperatures, it is crucial that the theory include both the effects of excitons and the electron-hole plasma. In this dissertation, I present a theoretical analysis of laser cooling of bulk GaAs based on a microscopic many-particle theory of absorption and luminescence of a partially ionized electron-hole plasma. This theory has been analyzed from a temperature 10K to 500K. It is shown that at high temperatures (above 300K), cooling can be modeled using older models with a few parameter changes. Below 200K, band filling effects dominate over Auger recombination. Below 30K excitonic effects are essential for laser cooling. In all cases, excitonic effects make cooling easier then predicted by a free carrier model. The initial cooling model is based on the assumption of a homogeneous undoped semiconductor. This model has been systematically modified to include effects that are present in real laser cooling experiments. The following modifications have been performed. (1) Propagation and polariton effects have been included. (2) The effect of p-doping has been included. (n-doping can be modeled in a similar fashion.) (3) In experiments, a passivation layer is required to minimize non-radiative recombination. The passivation results in a npn heterostructure. The effect of the npn heterostructure on cooling has been analyzed. (4) The effect of a Gaussian pump beam was analyzed and (5) Some of the parameters in the cooling model have a large uncertainty. The effect of modifying these parameters has been analyzed. Most of the extensions to the original theory have only had a modest effect on the overall results. However we find that the current passivation technique may not be sufficient to allow cooling. The passivation technique currently used appears

  13. Chaotic bursting in semiconductor lasers

    Science.gov (United States)

    Ruschel, Stefan; Yanchuk, Serhiy

    2017-11-01

    We investigate the dynamic mechanisms for low frequency fluctuations in semiconductor lasers subjected to delayed optical feedback, using the Lang-Kobayashi model. This system of delay differential equations displays pronounced envelope dynamics, ranging from erratic, so called low frequency fluctuations to regular pulse packages, if the time scales of fast oscillations and envelope dynamics are well separated. We investigate the parameter regions where low frequency fluctuations occur and compute their Lyapunov spectra. Using the geometric singular perturbation theory, we study this intermittent chaotic behavior and characterize these solutions as bursting slow-fast oscillations.

  14. Processing of insulators and semiconductors

    Science.gov (United States)

    Quick, Nathaniel R.; Joshi, Pooran C.; Duty, Chad Edward; Jellison, Jr., Gerald Earle; Angelini, Joseph Attilio

    2015-06-16

    A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.

  15. Bistable amphoteric centers in semiconductors

    International Nuclear Information System (INIS)

    Nikitina, A. G.; Zuev, V. V.

    2008-01-01

    It is shown that, at thermodynamic equilibrium, the release of charge carriers from the localized states of bistable amphoteric centers into quasi-free states depends on the degree of compensation. This brings about different functional dependences of the concentration of free charge carriers on temperature. It is found that, in uncompensated semiconductors, the concentration of free charge carriers follows the same dependence in the case of bistable amphoteric centers and bistable amphoteric U - centers, although the distributions of charge carriers over the charge states and configurations are different for these types of centers. The results can be used for interpreting various experimental data insufficiently explained in the context of the traditional approach

  16. Electron beam writing on semiconductors

    International Nuclear Information System (INIS)

    Bierhenke, H.; Kutzer, E.; Pascher, A.; Plitzner, H.; Rummel, P.; Siemens A.G., Muenchen; Siemens A.G., Muenchen

    1979-08-01

    Reported are the results of the 3 1/2 year research project 'Electron beam Writing on Semiconductors'. Work has been done in the field of direct wafer exposure techniques, and of mask making. Described are resist technology, setting up of a research device, exploration of alignment procedures, manufacturing of devices and their radiation influence. Furthermore, investigations and measurements of an electron beam machine bought for mask making purposes, the development of LSI-circuits with this machine, the software necessary and important developments of digital subsystems are reported. (orig.) [de

  17. Trace analysis of semiconductor materials

    CERN Document Server

    Cali, J Paul; Gordon, L

    1964-01-01

    Trace Analysis of Semiconductor Materials is a guidebook concerned with procedures of ultra-trace analysis. This book discusses six distinct techniques of trace analysis. These techniques are the most common and can be applied to various problems compared to other methods. Each of the four chapters basically includes an introduction to the principles and general statements. The theoretical basis for the technique involved is then briefly discussed. Practical applications of the techniques and the different instrumentations are explained. Then, the applications to trace analysis as pertaining

  18. EDITORIAL: Focus on Dilute Magnetic Semiconductors FOCUS ON DILUTE MAGNETIC SEMICONDUCTORS

    Science.gov (United States)

    Chambers, Scott A.; Gallagher, Bryan

    2008-05-01

    papers, the authors have not carried out the necessary control experiments and materials characterization to convincingly eliminate these possibilities. The former includes the growth of films without the magnetic dopant and the associated demonstration of the absence of ferromagnetism. Magnetic secondary phase formation is particularly problematic because in order to inject enough magnetic dopant to generate appreciable magnetization and spin polarization, one must often exceed the solid solubility of the dopant in the host. If the dopant is itself ferromagnetic in its elemental state, or if unintended magnetic products nucleate, spurious ferromagnetism will occur. Moreover, it is often a major analysis challenge to detect secondary phases when they consist of only a few per cent of the dopant; element specific spectroscopies such as x-ray absorption have been invaluable in this task. Powder diffraction is not sufficiently sensitive for this level of analysis. Against this backdrop, this focus issue of New Journal of Physics now appears. The editors' principal goal in soliciting papers has been to encourage investigators to submit work in which the necessary experiments have been done to allow the material to be adequately characterized. This collection contains a mix of experimental and theoretical papers, and many different types of materials are covered. This focus issue thus constitutes a snapshot in time of a fast-moving and fascinating field of materials physics. Reference [1] Dietl T, Ohno H, Matsukura F, Cibert J and Ferrand D 2000 Science 287 1019 Focus on Dilute Magnetic Semiconductors Contents Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As E De Ranieri, A W Rushforth, K Výborný, U Rana, E Ahmad, R P Campion, C T Foxon, B L Gallagher, A C Irvine, J Wunderlich and T Jungwirth Structure and magnetism of cobalt-doped ZnO thin films M Ivill, S J Pearton, S Rawal, L Leu, P Sadik, R Das, A F Hebard, M

  19. Film-based Sensors with Piezoresistive Molecular Conductors as Active Components Strain Damage and Thermal Regeneration

    Directory of Open Access Journals (Sweden)

    Elena Laukhina

    2011-02-01

    Full Text Available The article is addressed to the development of flexible all-organic bi layer (BL film-based sensors being capable of measuring strain as a well-defined electrical signal in a wide range of elongations and temperature. The purpose was achieved by covering polycarbonate films with the polycrystalline layer of a high piezoresistive organic molecular conductor. To determine restrictions for sensor applications, the effect of monoaxial strain on the resistance and texture of the sensing layers of BL films was studied. The experiments have shown that the maximum strain before fracture is about 1 %. A thermal regeneration of the sensing layer of the BL film-based sensors that were damaged by cyclic load is also described. These sensors are able to take the place of conventional metal-based strain and pressure gages in low cost innovative controlling and monitoring technologies.

  20. Quantum wells, wires and dots theoretical and computational physics of semiconductor nanostructures

    CERN Document Server

    Harrison, Paul

    2016-01-01

    Quantum Wells, Wires and Dots provides all the essential information, both theoretical and computational, to develop an understanding of the electronic, optical and transport properties of these semiconductor nanostructures. The book will lead the reader through comprehensive explanations and mathematical derivations to the point where they can design semiconductor nanostructures with the required electronic and optical properties for exploitation in these technologies. This fully revised and updated 4th edition features new sections that incorporate modern techniques and extensive new material including: - Properties of non-parabolic energy bands - Matrix solutions of the Poisson and Schrodinger equations - Critical thickness of strained materials - Carrier scattering by interface roughness, alloy disorder and impurities - Density matrix transport modelling -Thermal modelling Written by well-known authors in the field of semiconductor nanostructures and quantum optoelectronics, this user-friendly guide is pr...

  1. Suitability of integrated protection diodes from diverse semiconductor technologies

    NARCIS (Netherlands)

    van Wanum, Maurice; Lebouille, Tom; Visser, Guido; van Vliet, Frank Edward

    2009-01-01

    Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are

  2. Biaxial stress driven tetragonal symmetry breaking and high-temperature ferromagnetic semiconductor from half-metallic CrO2

    Science.gov (United States)

    Xiao, Xiang-Bo; Liu, Bang-Gui

    2018-03-01

    It is highly desirable to combine the full spin polarization of carriers with modern semiconductor technology for spintronic applications. For this purpose, one needs good crystalline ferromagnetic (or ferrimagnetic) semiconductors with high Curie temperatures. Rutile CrO2 is a half-metallic spintronic material with Curie temperature 394 K and can have nearly full spin polarization at room temperature. Here, we find through first-principles investigation that when a biaxial compressive stress is applied on rutile CrO2, the density of states at the Fermi level decreases with the in-plane compressive strain, there is a structural phase transition to an orthorhombic phase at the strain of -5.6 % , and then appears an electronic phase transition to a semiconductor phase at -6.1 % . Further analysis shows that this structural transition, accompanying the tetragonal symmetry breaking, is induced by the stress-driven distortion and rotation of the oxygen octahedron of Cr, and the half-metal-semiconductor transition originates from the enhancement of the crystal field splitting due to the structural change. Importantly, our systematic total-energy comparison indicates the ferromagnetic Curie temperature remains almost independent of the strain, near 400 K. This biaxial stress can be realized by applying biaxial pressure or growing the CrO2 epitaxially on appropriate substrates. These results should be useful for realizing full (100%) spin polarization of controllable carriers as one uses in modern semiconductor technology.

  3. Semiconductor X-ray detectors

    CERN Document Server

    Lowe, Barrie Glyn

    2014-01-01

    Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and non-destructive materials analysis. The Lithium Drifted Silicon (Si(Li)) X-Ray Detector, with its good resolution and peak to background, pioneered this type of analysis on electron microscopes, x-ray fluorescence instruments, and radioactive source- and accelerator-based excitation systems. Although rapid progress in Silicon Drift Detectors (SDDs), Charge Coupled Devices (CCDs), and Compound Semiconductor Detectors, including renewed interest in alternative materials such as CdZnTe and diamond, has made the Si(Li) X-Ray Detector nearly obsolete, the device serves as a useful benchmark and still is used in special instances where its large, sensitive depth is essential. Semiconductor X-Ray Detectors focuses on the history and development of Si(Li) X-Ray Detect...

  4. Semiconductor nanostructures for artificial photosynthesis

    Science.gov (United States)

    Yang, Peidong

    2012-02-01

    Nanowires, with their unique capability to bridge the nanoscopic and macroscopic worlds, have already been demonstrated as important materials for different energy conversion. One emerging and exciting direction is their application for solar to fuel conversion. The generation of fuels by the direct conversion of solar energy in a fully integrated system is an attractive goal, but no such system has been demonstrated that shows the required efficiency, is sufficiently durable, or can be manufactured at reasonable cost. One of the most critical issues in solar water splitting is the development of a suitable photoanode with high efficiency and long-term durability in an aqueous environment. Semiconductor nanowires represent an important class of nanostructure building block for direct solar-to-fuel application because of their high surface area, tunable bandgap and efficient charge transport and collection. Nanowires can be readily designed and synthesized to deterministically incorporate heterojunctions with improved light absorption, charge separation and vectorial transport. Meanwhile, it is also possible to selectively decorate different oxidation or reduction catalysts onto specific segments of the nanowires to mimic the compartmentalized reactions in natural photosynthesis. In this talk, I will highlight several recent examples in this lab using semiconductor nanowires and their heterostructures for the purpose of direct solar water splitting.

  5. Dopants and defects in semiconductors

    CERN Document Server

    McCluskey, Matthew D

    2012-01-01

    "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics … The book will be most useful for beginning graduate students in materials science. … an easy reading, broad introductory overview of the field …"-Materials Today, July-August 2012"… well written, with clear, lucid explanations …"-Chemistry World"The scientific development towards the method of controllable doping transformed the erratic and not reproducible family of semiconductor materials into the truly wonderful basis of modern microelectronics. This book tells the remarkable success story and I recommend it!"-Hans J. Queisser, Max-Planck-Institute, Stuttgart, Germany"McCluskey and Haller have written an outstanding modern guide to this field that will be useful to newcomers, and also to active researchers who want to broaden their horizons, as a means to learn the capabilities and limitations of the many techniques that are used in semiconductor-defect science."-Professor Michael J....

  6. The ATLAS semiconductor tracker (SCT)

    International Nuclear Information System (INIS)

    Jackson, J.N.

    2005-01-01

    The ATLAS detector (CERN,LHCC,94-43 (1994)) is designed to study a wide range of physics at the CERN Large Hadron Collider (LHC) at luminosities up to 10 34 cm -2 s -1 with a bunch-crossing rate of 40 MHz. The Semiconductor Tracker (SCT) forms a key component of the Inner Detector (vol. 1, ATLAS TDR 4, CERN,LHCC 97-16 (1997); vol. 2, ATLAS TDR 5, CERN,LHCC 97-17 (1997)) which is situated inside a 2 T solenoid field. The ATLAS Semiconductor Tracker (SCT) utilises 4088 silicon modules with binary readout mounted on carbon fibre composite structures arranged in the forms of barrels in the central region and discs in the forward region. The construction of the SCT is now well advanced. The design of the SCT modules, services and support structures will be briefly outlined. A description of the various stages in the construction process will be presented with examples of the performance achieved and the main difficulties encountered. Finally, the current status of the construction is reviewed

  7. Charge transport in organic semiconductors.

    Science.gov (United States)

    Bässler, Heinz; Köhler, Anna

    2012-01-01

    Modern optoelectronic devices, such as light-emitting diodes, field-effect transistors and organic solar cells require well controlled motion of charges for their efficient operation. The understanding of the processes that determine charge transport is therefore of paramount importance for designing materials with improved structure-property relationships. Before discussing different regimes of charge transport in organic semiconductors, we present a brief introduction into the conceptual framework in which we interpret the relevant photophysical processes. That is, we compare a molecular picture of electronic excitations against the Su-Schrieffer-Heeger semiconductor band model. After a brief description of experimental techniques needed to measure charge mobilities, we then elaborate on the parameters controlling charge transport in technologically relevant materials. Thus, we consider the influences of electronic coupling between molecular units, disorder, polaronic effects and space charge. A particular focus is given to the recent progress made in understanding charge transport on short time scales and short length scales. The mechanism for charge injection is briefly addressed towards the end of this chapter.

  8. Strain Dependence of Photoluminescense of Individual Carbon Nanotubes

    Science.gov (United States)

    Nikolaev, Pavel N.; Leeuw, Tonya K.; Tsyboulski, Dmitri A.; Bachilo, Sergei M.; Weisman, Bruce; Arepalli, Sivaram

    2007-01-01

    We have investigated strain dependence of photoluminescense (PL) spectra of single wall carbon nanotubes (SWNT). Nanotubes were sparsely dispersed in a thin PMMA film applied to acrylic bar, and strained in both compression and extension by bending this bar in either direction in a homebuilt four-point bending rig. The average surface strain was measured with high accuracy by a resistive strain gage applied on top of the film. The near infrared imaging and spectroscopy were performed on the inverted microscope equipped with high numerical aperture reflective objective lens and InGaAs CCD cameras. PL was excited with a diode laser at either 658, 730 or 785 nm, linearly polarized in the direction of the strain. We were able to measure (n,m) types and orientation of individual nanotubes with respect to strain direction and strain dependence of their PL maxima. It was found that PL peak shifts with respect to the values measured in SDS micelles are a sum of three components. First, a small environmental shift due to difference in the dielectric constant of the surrounding media, that is constant and independent of the nanotube type. Second, shift due to isotropic compression of the film during drying. Third, shifts produced by the uniaxial loading of the film in the experiment. Second and third shifts follow expression based on the first-order expansion of the TB hamiltonian. Their magnitude is proportional to the nanotube chiral angle and strain, and direction is determined by the nanotube quantum number. PL strain dependence measured for a number of various nanotube types allows to estimate TB carbon-carbon transfer integral.

  9. Novel room temperature ferromagnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

    2004-06-01

    Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous

  10. Hybrid anode for semiconductor radiation detectors

    Science.gov (United States)

    Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

    2013-11-19

    The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

  11. Terahertz plasmonics with semiconductor surfaces and antennas

    NARCIS (Netherlands)

    Gómez Rivas, J.; Berrier, A.

    2009-01-01

    Semiconductors have a Drude-like behavior at terahertz (THz) frequencies similar to metals at optical frequencies. Narrow band gap semiconductors have a dielectric constant with a negative real component and a relatively small imaginary component. This permittivity is characteristic of noble metals

  12. Redox properties of small semiconductor particles

    International Nuclear Information System (INIS)

    Liver, N.; Nitzan, A.

    1992-01-01

    The size dependence of electrical and thermodynamic quantities of intermediate-sized semiconductor particles in an electrolyte solution with a given redox pair are studied. The equilibrium constant for this system is then derived based on the relationship of the electrolytic redox components to the size, charges, and concentration of the semiconductor particles. 25 refs., 9 figs., 1 tab

  13. neutron-Induced Failures in semiconductor Devices

    Energy Technology Data Exchange (ETDEWEB)

    Wender, Stephen Arthur [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-03-13

    Single Event Effects are a very significant failure mode in modern semiconductor devices that may limit their reliability. Accelerated testing is important for semiconductor industry. Considerable more work is needed in this field to mitigate the problem. Mitigation of this problem will probably come from Physicists and Electrical Engineers working together

  14. Semiconductor composition containing iron, dysprosium, and terbium

    Science.gov (United States)

    Pooser, Raphael C.; Lawrie, Benjamin J.; Baddorf, Arthur P.; Malasi, Abhinav; Taz, Humaira; Farah, Annettee E.; Kalyanaraman, Ramakrishnan; Duscher, Gerd Josef Mansfred; Patel, Maulik K.

    2017-09-26

    An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.

  15. Epitaxy of semiconductor-superconductor nanowires

    DEFF Research Database (Denmark)

    Krogstrup, P.; Ziino, N.L.B.; Chang, W.

    2015-01-01

    Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface...

  16. Power semiconductor device adaptive cooling assembly

    NARCIS (Netherlands)

    2011-01-01

    The invention relates to a power semiconductor device (100) cooling assembly for cooling a power semiconductor device (100), wherein the assembly comprises an actively cooled heat sink (102) and a controller (208; 300), wherein the controller (208; 300) is adapted for adjusting the cooling

  17. Two-fluid hydrodynamic model for semiconductors

    DEFF Research Database (Denmark)

    Maack, Johan Rosenkrantz; Mortensen, N. Asger; Wubs, Martijn

    2018-01-01

    The hydrodynamic Drude model (HDM) has been successful in describing the optical properties of metallic nanostructures, but for semiconductors where several different kinds of charge carriers are present an extended theory is required. We present a two-fluid hydrodynamic model for semiconductors...

  18. Miniature semiconductor detectors for in vivo dosimetry

    International Nuclear Information System (INIS)

    Rosenfeld, A. B.; Cutajar, D.; Lerch, M. L. F.; Takacs, G.; Cornelius, I. M.; Yudelev, M.; Zaider, M.

    2006-01-01

    Silicon mini-semiconductor detectors are found in wide applications for in vivo personal dosimetry and dosimetry and Micro-dosimetry of different radiation oncology modalities. These applications are based on integral and spectroscopy modes of metal oxide semiconductor field effect transistor and silicon p-n junction detectors. The advantages and limitations of each are discussed. (authors)

  19. Dispersion-induced nonlinearities in semiconductors

    DEFF Research Database (Denmark)

    Mørk, Jesper; Mecozzi, A.

    2002-01-01

    A dispersive and saturable medium is shown, under very general conditions, to possess ultrafast dynamic behaviour due to non-adiabatic polarisation dynamics. Simple analytical expressions relating the effect to the refractive index dispersion of a semiconductor ire derived and the magnitude...... of the equivalent Kerr coefficient is shown to be in qualitative agreement with measurements on active semiconductor waveguides....

  20. Electronic structure of filled tetrahedral semiconductors

    NARCIS (Netherlands)

    Wood, D.M.; Zunger, Alex; Groot, R. de

    1985-01-01

    We discuss the susceptibility of zinc-blende semiconductors to band-structure modification by insertion of small atoms at their tetrahedral interstitial states. GaP is found to become a direct-gap semiconductor with two He atoms present at its interstitial sites; Si does not. Analysis of the factors

  1. Apparatus for testing semiconductor devices and capacitors

    International Nuclear Information System (INIS)

    York, R.A.

    1984-01-01

    An apparatus is provided for testing semiconductor devices. The apparatus tests the impedance of the semiconductor devices in both conducting and non-conducting states to detect semiconductors whose impedance in the conducting state is too high or whose impedance in the non-conducting state is too low. The apparatus uses a battery source for low voltage d.c. The circuitry for detecting when the impedance is too high in the conducting state includes a lamp in series with the battery source and the semiconductor device, whereby the impedance of the semiconductor device determines whether sufficient current will flow through the lamp to cause the lamp to illuminate. A d.c. to d.c. converter is provided to boost the voltage from the battery source to a relatively high voltage d.c. The relatively high voltage d.c. can be connected by a switch to circuitry for detecting when the impedance of the semiconductor device in the non-conducting state is too low. The circuitry for detecting when the impedance of the semiconductor device is too low includes a resistor which senses the current flowing in the device and converts the current into a voltage proportional to the leakage current. This voltage is then compared against a fixed reference. Further circuitry is provided for providing a visual indication when the voltage representative of leakage in relation to the reference signal indicates that there is excessive current flow through the semiconductor device

  2. Strain Engineering to Modify the Electrochemistry of Energy Storage Electrodes

    Science.gov (United States)

    Muralidharan, Nitin; Carter, Rachel; Oakes, Landon; Cohn, Adam P.; Pint, Cary L.

    2016-01-01

    Strain engineering has been a critical aspect of device design in semiconductor manufacturing for the past decade, but remains relatively unexplored for other applications, such as energy storage. Using mechanical strain as an input parameter to modulate electrochemical potentials of metal oxides opens new opportunities intersecting fields of electrochemistry and mechanics. Here we demonstrate that less than 0.1% strain on a Ni-Ti-O based metal-oxide formed on superelastic shape memory NiTi alloys leads to anodic and cathodic peak potential shifts by up to ~30 mV in an electrochemical cell. Moreover, using the superelastic properties of NiTi to enable strain recovery also recovers the electrochemical potential of the metal oxide, providing mechanistic evidence of strain-modified electrochemistry. These results indicate that mechanical energy can be coupled with electrochemical systems to efficiently design and optimize a new class of strain-modulated energy storage materials. PMID:27283872

  3. Manipulating semiconductor colloidal stability through doping.

    Science.gov (United States)

    Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

    2014-10-10

    The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

  4. Device Physics of Narrow Gap Semiconductors

    CERN Document Server

    Chu, Junhao

    2010-01-01

    Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detector...

  5. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2013-01-01

    This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

  6. Molecular semiconductors photoelectrical properties and solar cells

    CERN Document Server

    Rees, Ch

    1985-01-01

    During the past thirty years considerable efforts have been made to design the synthesis and the study of molecular semiconductors. Molecular semiconductors - and more generally molecular materials - involve interactions between individual subunits which can be separately synthesized. Organic and metallo-organic derivatives are the basis of most of the molecular materials. A survey of the literature on molecular semiconductors leaves one rather confused. It does seem to be very difficult to correlate the molecular structure of these semiconductors with their experimental electrical properties. For inorganic materials a simple definition delimits a fairly homogeneous family. If an inorganic material has a conductivity intermediate between that of an 12 1 1 3 1 1 insulator « 10- n- cm- ) and that of a metal (> 10 n- cm- ), then it is a semiconductor and will exhibit the characteristic properties of this family, such as junction formation, photoconductivity, and the photovoltaic effect. For molecular compounds,...

  7. The electronic properties of semiconductor quantum dots

    International Nuclear Information System (INIS)

    Barker, J.A.

    2000-10-01

    This work is an investigation into the electronic behaviour of semiconductor quantum dots, particularly self-assembled quantum dot arrays. Processor-efficient models are developed to describe the electronic structure of dots, deriving analytic formulae for the strain tensor, piezoelectric distribution and diffusion- induced evolution of the confinement potential, for dots of arbitrary initial shape and composition profile. These models are then applied to experimental data. Transitions due to individual quantum dots have a narrow linewidth as a result of their discrete density of states. By contrast, quantum dot arrays exhibit inhomogeneous broadening which is generally attributed to size variations between the individual dots in the ensemble. Interpreting the results of double resonance spectroscopy, it is seen that variation in the indium composition of the nominally InAs dots is also present. This result also explains the otherwise confusing relationship between the spread in the ground-state and excited-state transition energies. Careful analysis shows that, in addition to the variations in size and composition, some other as yet unidentified broadening mechanism must also be present. The influence of rapid thermal annealing on dot electronic structure is also considered, finding that the experimentally observed blue-shift and narrowing of the photoluminescence linewidth may both be explained in terms of normal In/Ga interdiffusion. InAs/GaAs self-assembled quantum dots are commonly assumed to have a pyramidal geometry, so that we would expect the energy separation of the ground-state electron and hole levels in the dot to be largest at a positive applied field. This should also be the case for any dot of uniform composition whose shape tapers inwards from base to top, counter to the results of experimental Stark-shift spectroscopy which show a peak transition energy at a negative applied field. It is demonstrated that this inversion of the ground state

  8. Magnetism of Ta dichalcogenide monolayers tuned by strain and hydrogenation

    Energy Technology Data Exchange (ETDEWEB)

    Manchanda, Priyanka; Sellmyer, D. J.; Skomski, Ralph [Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588 (United States); Sharma, Vinit [Department of Materials Science and Engineering and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269 (United States); Yu, Hongbin [School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States)

    2015-07-20

    The effects of strain and hydrogenation on the electronic, magnetic, and optical properties of monolayers of Ta based dichalcogenides (TaX{sub 2}; X = S, Se, and Te) are investigated using density-functional theory. We predict a complex scenario of strain-dependent magnetic phase transitions involving paramagnetic, ferromagnetic, and modulated antiferromagnetic states. Covering one of the two chalcogenide surfaces with hydrogen switches the antiferromagnetic/nonmagnetic TaX{sub 2} monolayers to a semiconductor, and the optical behavior strongly depends on strain and hydrogenation. Our research opens pathways towards the manipulation of magnetic as well as optical properties for future spintronics and optoelectronics applications.

  9. Vertically contacting ultrathin semiconductor nanomembranes by rolled-up metallic contacts incorporating selective etching techniques

    Energy Technology Data Exchange (ETDEWEB)

    Thurmer, Dominic J.; Bof Bufon, Carlos Cesar; Deneke, Christoph [IFW Dresden, Dresden (Germany); Schmidt, Oliver G. [IFW Dresden, Dresden (Germany); TU Chemnitz, Chemnitz (Germany)

    2011-07-01

    Merging modern self-assembly techniques with well established top-down processing methods is paving the way for more sophisticated device generations in the future. Nanomembranes, composed of many different material classes, have already been shown to provide the necessary framework for a diverse range of structures and devices incorporating wrinkling, buckling, folding and rolling of thin films. In the past decade, an elegant symbiosis of bottom-up and top-down methods has emerged to fabricate hybrid layer systems incorporating the controlled release and rearrangement of inherently strained layers. Using selective III-V etchants in combination with inherently strained layers we are able to fabricate structures which allow us to contact through single and multi-material semiconductor nanomembrane creating many devices in parallel and on the original semiconductor substrate. We demonstrate this technique by creating hybrid superconducting junctions created by sandwiching the semiconductor nanomembrane between two superconducting contacts. Using solely optical lithography techniques we are able to form junctions with lateral dimensions of a few micrometers and a semiconductor barrier thickness of down to 5 nm.

  10. Origin of the Distinct Diffusion Behaviors of Cu and Ag in Covalent and Ionic Semiconductors.

    Science.gov (United States)

    Deng, Hui-Xiong; Luo, Jun-Wei; Li, Shu-Shen; Wei, Su-Huai

    2016-10-14

    It is well known that Cu diffuses faster than Ag in covalent semiconductors such as Si, which has prevented the replacement of Ag by Cu as a contact material in Si solar cells for reducing the cost. Surprisingly, in more ionic materials such as CdTe, Ag diffuses faster than Cu despite that it is larger than Cu, which has prevented the replacement of Cu by Ag in CdTe solar cells to improve the performance. But, so far, the mechanisms behind these distinct diffusion behaviors of Cu and Ag in covalent and ionic semiconductors have not been addressed. Here we reveal the underlying mechanisms by combining the first-principles calculations and group theory analysis. We find that the symmetry controlled s-d coupling plays a critical role in determining the diffusion behaviors. The s-d coupling is absent in pure covalent semiconductors but increases with the ionicity of the zinc blende semiconductors, and is larger for Cu than for Ag, owing to its higher d orbital energy. In conjunction with Coulomb interaction and strain energy, the s-d coupling is able to explain all the diffusion behaviors from Cu to Ag and from covalent to ionic hosts. This in-depth understanding enables us to engineer the diffusion of impurities in various semiconductors.

  11. Polarization-insensitive quantum-dot coupled quantum-well semiconductor optical amplifier

    International Nuclear Information System (INIS)

    Huang Lirong; Yu Yi; Tian Peng; Huang Dexiu

    2009-01-01

    The optical gain of a quantum-dot semiconductor optical amplifier is usually seriously dependent on polarization; we propose a quantum-dot coupled tensile-strained quantum-well structure to obtain polarization insensitivity. The tensile-strained quantum well not only serves as a carrier injection layer of quantum dots but also offers gain to the transverse-magnetic mode. Based on the polarization-dependent coupled carrier rate-equation model, we study carrier competition among quantum well and quantum dots, and study the polarization dependence of the quantum-dot coupled quantum-well semiconductor optical amplifier. We also analyze polarization-dependent photon-mediated carrier distribution among quantum well and quantum dots. It is shown that polarization-insensitive gain can be realized by optimal design

  12. TSOM method for semiconductor metrology

    Science.gov (United States)

    Attota, Ravikiran; Dixson, Ronald G.; Kramar, John A.; Potzick, James E.; Vladár, András E.; Bunday, Benjamin; Novak, Erik; Rudack, Andrew

    2011-03-01

    Through-focus scanning optical microscopy (TSOM) is a new metrology method that achieves 3D nanoscale measurement sensitivity using conventional optical microscopes; measurement sensitivities are comparable to what is typical when using scatterometry, scanning electron microscopy (SEM), and atomic force microscopy (AFM). TSOM can be used in both reflection and transmission modes and is applicable to a variety of target materials and shapes. Nanometrology applications that have been demonstrated by experiments or simulations include defect analysis, inspection and process control; critical dimension, photomask, overlay, nanoparticle, thin film, and 3D interconnect metrologies; line-edge roughness measurements; and nanoscale movements of parts in MEMS/NEMS. Industries that could benefit include semiconductor, data storage, photonics, biotechnology, and nanomanufacturing. TSOM is relatively simple and inexpensive, has a high throughput, and provides nanoscale sensitivity for 3D measurements with potentially significant savings and yield improvements in manufacturing.

  13. Semirelativity in semiconductors: a review.

    Science.gov (United States)

    Zawadzki, Wlodek

    2017-09-20

    An analogy between behavior of electrons in narrow-gap semiconductors (NGS) and relativistic electrons in vacuum is reviewed. Energy band structures [Formula: see text] are considered for various NGS materials and their correspondence to the energy-momentum relation in special relativity is emphasized. It is indicated that special relativity for vacuum is analogous to a two-band [Formula: see text] description for NGS. The maximum electron velocity in NGS is [Formula: see text], which corresponds to the light velocity in vacuum. An effective mass of charge carriers in semiconductors is introduced, relating their velocity to quasimomentum and it is shown that this mass depends on electron energy (or velocity) in a way similar to the mass of free relativistic electrons. In [Formula: see text] alloys one can reach vanishing energy gap at which electrons and light holes become three-dimensional massless Dirac fermions. A wavelength [Formula: see text] is defined for NGS, in analogy to the Compton wavelength in relativistic quantum mechanics. It is estimated that [Formula: see text] is on the order of tens of Angstroms in typical semiconducting materials which is experimentally confirmed in tunneling experiments on energy dispersion in the forbidden gap. Statistical properties of the electron gas in NGS are calculated and their similarity is demonstrated to those of the Juttner gas of relativistic particles. Interband electron tunneling in NGS is described and shown to be in close analogy to the predicted but unobserved tunneling between negative and positive energies resulting from the Dirac equation for free electrons. It is demonstrated that the relativistic analogy holds for orbital and spin properties of electrons in the presence of an external magnetic field. In particular, it is shown that the spin magnetic moment of both NGS electrons and relativistic electrons approaches zero with increasing energy. This conclusion is confirmed experimentally for NGS. Electrons

  14. Reconfigurable engineered motile semiconductor microparticles.

    Science.gov (United States)

    Ohiri, Ugonna; Shields, C Wyatt; Han, Koohee; Tyler, Talmage; Velev, Orlin D; Jokerst, Nan

    2018-05-03

    Locally energized particles form the basis for emerging classes of active matter. The design of active particles has led to their controlled locomotion and assembly. The next generation of particles should demonstrate robust control over their active assembly, disassembly, and reconfiguration. Here we introduce a class of semiconductor microparticles that can be comprehensively designed (in size, shape, electric polarizability, and patterned coatings) using standard microfabrication tools. These custom silicon particles draw energy from external electric fields to actively propel, while interacting hydrodynamically, and sequentially assemble and disassemble on demand. We show that a number of electrokinetic effects, such as dielectrophoresis, induced charge electrophoresis, and diode propulsion, can selectively power the microparticle motions and interactions. The ability to achieve on-demand locomotion, tractable fluid flows, synchronized motility, and reversible assembly using engineered silicon microparticles may enable advanced applications that include remotely powered microsensors, artificial muscles, reconfigurable neural networks and computational systems.

  15. High throughput semiconductor deposition system

    Science.gov (United States)

    Young, David L.; Ptak, Aaron Joseph; Kuech, Thomas F.; Schulte, Kevin; Simon, John D.

    2017-11-21

    A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 .mu.m/minute.

  16. Magnetic susceptibility of semiconductor melts

    International Nuclear Information System (INIS)

    Kutvitskij, V.A.; Shurygin, P.M.

    1975-01-01

    The temperature dependences chi of various alloys confirm the existence of cluster formations in molten semiconductors, the stability of these formations in melts being considerably affected by the anion nature. The concentrational dependences of the magnetic susceptibility for all the investigated systems exhibit the diamagnetism maxima corresponding to the compound compositions. Heating the melt causes ''smearing'' the maxima, which is related with the cluster structure dissociation. The existence of the maxima concentrational dependence chi corresponding to BiTe and BiSe is found in the isotherms. The non-linear dependence of chi on the composition shows the absence of a single-valued relation between the phase diagram and the chi-diagram for melts

  17. Volatile organometallic and semiconductor materials

    International Nuclear Information System (INIS)

    Dickson, R.S.

    1991-01-01

    This article reports on a project concerned with the metal organic chemical vapour deposition (MOCVD) of mercury-cadmium telluride (MCT) undertaken by a research consortium based in the Clayton area involving Monash University Chemistry Department, Telecom Research Laboratories, and CSIRO Division of Material Sciences and Technology. An M.R. Semicon 226 MOCVD reactor, operating near atmospheric presure with hydrogen carrier gas has been used. Most applications of MCT are direct consequence of its responsiveness to radiation in infrared region spectrum. The main aims of the project were to prepare and assess a range of volatile organometallics that might find use as a dopant sources for MCT, to prepare and study the properties of a range of different lanthanide complexes for MOCVD applications and to fully characterize the semiconductor wafers after growth. 19 refs., 3 figs

  18. Theory of Defects in Semiconductors

    CERN Document Server

    Drabold, David A

    2007-01-01

    Semiconductor science and technology is the art of defect engineering. The theoretical modeling of defects has improved dramatically over the past decade. These tools are now applied to a wide range of materials issues: quantum dots, buckyballs, spintronics, interfaces, amorphous systems, and many others. This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. Today's state-of-the-art, as well as tomorrow’s tools, are discussed: the supercell-pseudopotential method, the GW formalism,Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments, etc. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.

  19. Semirelativity in semiconductors: a review

    Science.gov (United States)

    Zawadzki, Wlodek

    2017-09-01

    An analogy between behavior of electrons in narrow-gap semiconductors (NGS) and relativistic electrons in vacuum is reviewed. Energy band structures \\varepsilon ≤ft(\\mathbf{k}\\right) are considered for various NGS materials and their correspondence to the energy-momentum relation in special relativity is emphasized. It is indicated that special relativity for vacuum is analogous to a two-band \\mathbf{k}\\centerdot \\mathbf{p} description for NGS. The maximum electron velocity in NGS is u≃ 1× {{10}8}~\\text{cm}~{{\\text{s}}-1} , which corresponds to the light velocity in vacuum. An effective mass of charge carriers in semiconductors is introduced, relating their velocity to quasimomentum and it is shown that this mass depends on electron energy (or velocity) in a way similar to the mass of free relativistic electrons. In \\text{H}{{\\text{g}}1-x}\\text{C}{{\\text{d}}x}\\text{Te} alloys one can reach vanishing energy gap at which electrons and light holes become three-dimensional massless Dirac fermions. A wavelength {λz} is defined for NGS, in analogy to the Compton wavelength in relativistic quantum mechanics. It is estimated that {λz} is on the order of tens of Angstroms in typical semiconducting materials which is experimentally confirmed in tunneling experiments on energy dispersion in the forbidden gap. Statistical properties of the electron gas in NGS are calculated and their similarity is demonstrated to those of the Juttner gas of relativistic particles. Interband electron tunneling in NGS is described and shown to be in close analogy to the predicted but unobserved tunneling between negative and positive energies resulting from the Dirac equation for free electrons. It is demonstrated that the relativistic analogy holds for orbital and spin properties of electrons in the presence of an external magnetic field. In particular, it is shown that the spin magnetic moment of both NGS electrons and relativistic electrons approaches zero with increasing

  20. Semiconductor processing with excimer lasers

    International Nuclear Information System (INIS)

    Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.

    1983-01-01

    The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications

  1. Photodiodes based on fullerene semiconductor

    International Nuclear Information System (INIS)

    Voz, C.; Puigdollers, J.; Cheylan, S.; Fonrodona, M.; Stella, M.; Andreu, J.; Alcubilla, R.

    2007-01-01

    Fullerene thin films have been deposited by thermal evaporation on glass substrates at room temperature. A comprehensive optical characterization was performed, including low-level optical absorption measured by photothermal deflection spectroscopy. The optical absorption spectrum reveals a direct bandgap of 2.3 eV and absorption bands at 2.8 and 3.6 eV, which are related to the creation of charge-transfer excitons. Various photodiodes on indium-tin-oxide coated glass substrates were also fabricated, using different metallic contacts in order to compare their respective electrical characteristics. The influence of a poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) buffer layer between the indium-tin-oxide electrode and the fullerene semiconductor is also demonstrated. These results are discussed in terms of the workfunction for each electrode. Finally, the behaviour of the external quantum efficiency is analyzed for the whole wavelength spectrum

  2. Fundamentals of semiconductor processing technology

    CERN Document Server

    El-Kareh, Badih

    1995-01-01

    The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac­ turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil­ ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech­ n...

  3. Solid-state NMR of inorganic semiconductors.

    Science.gov (United States)

    Yesinowski, James P

    2012-01-01

    Studies of inorganic semiconductors by solid-state NMR vary widely in terms of the nature of the samples investigated, the techniques employed to observe the NMR signal, and the types of information obtained. Compared with the NMR of diamagnetic non-semiconducting substances, important differences often result from the presence of electron or hole carriers that are the hallmark of semiconductors, and whose theoretical interpretation can be involved. This review aims to provide a broad perspective on the topic for the non-expert by providing: (1) a basic introduction to semiconductor physical concepts relevant to NMR, including common crystal structures and the various methods of making samples; (2) discussions of the NMR spin Hamiltonian, details of some of the NMR techniques and strategies used to make measurements and theoretically predict NMR parameters, and examples of how each of the terms in the Hamiltonian has provided useful information in bulk semiconductors; (3) a discussion of the additional considerations needed to interpret the NMR of nanoscale semiconductors, with selected examples. The area of semiconductor NMR is being revitalized by this interest in nanoscale semiconductors, the great improvements in NMR detection sensitivity and resolution that have occurred, and the current interest in optical pumping and spintronics-related studies. Promising directions for future research will be noted throughout.

  4. Strain measurements by fiber Bragg grating sensors for in situ pile loading tests

    Science.gov (United States)

    Schmidt-Hattenberger, Cornelia; Straub, Tilmann; Naumann, Marcel; Borm, Günter; Lauerer, Robert; Beck, Christoph; Schwarz, Wolfgang

    2003-07-01

    A fiber Bragg grating (FBG) sensor network has been installed into a large diameter concrete pile on a real construction site. The intention was to monitor its deformation behavior during several quasi-static loading cycles. The skin friction between pile and subsoil affecting the ultimate bearing capacity of the pile as well as the settlement behavior of the structure under investigation has been derived from our measurements. A comparison between the results of the fiber Bragg grating sensors and conventional concrete strain gages (CSG) has shown excellent correspondence.

  5. Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography

    DEFF Research Database (Denmark)

    Cooper, David; Rouviere, Jean-Luc; Béché, Armand

    2011-01-01

    The optical properties of semiconductor quantum dots are greatly influenced by their strain state. Dark field electron holography has been used to measure the strain in InAs quantum dots grown in InP with a spatial resolution of 1 nm. A strain value of 5.4%60.1% has been determined which...

  6. Strain engineering on transmission carriers of monolayer phosphorene.

    Science.gov (United States)

    Zhang, Wei; Li, Feng; Hu, Junsong; Zhang, Ping; Yin, Jiuren; Tang, Xianqiong; Jiang, Yong; Wu, Bozhao; Ding, Yanhuai

    2017-11-22

    The effects of uniaxial strain on the structure, band gap and transmission carriers of monolayer phosphorene were investigated by first-principles calculations. The strain induced semiconductor-metal as well as direct-indirect transitions were studied in monolayer phosphorene. The position of CBM which belonged to indirect gap shifts along the direction of the applied strain. We have concluded the change rules of the carrier effective mass when plane strains are applied. In band structure, the sudden decrease of band gap or the new formation of CBM (VBM) causes the unexpected change in carrier effective mass. The effects of zigzag and armchair strain on the effective electron mass in phosphorene are different. The strain along zigzag direction has effects on the electrons effective mass along both zigzag and armchair direction. By contrast, armchair-direction strain seems to affect only on the free electron mass along zigzag direction. For the holes, the effective masses along zigzag direction are largely affected by plane strains while the effective mass along armchair direction exhibits independence in strain processing. The carrier density of monolayer phosphorene at 300 K is calculated about [Formula: see text] cm -2 , which is greatly influenced by the temperature and strain. Strain engineering is an efficient method to improve the carrier density in phosphorene.

  7. Foreword: Focus on Superconductivity in Semiconductors

    Directory of Open Access Journals (Sweden)

    Yoshihiko Takano

    2008-01-01

    Full Text Available Since the discovery of superconductivity in diamond, much attention has been given to the issue of superconductivity in semiconductors. Because diamond has a large band gap of 5.5 eV, it is called a wide-gap semiconductor. Upon heavy boron doping over 3×1020 cm−3, diamond becomes metallic and demonstrates superconductivity at temperatures below 11.4 K. This discovery implies that a semiconductor can become a superconductor upon carrier doping. Recently, superconductivity was also discovered in boron-doped silicon and SiC semiconductors. The number of superconducting semiconductors has increased. In 2008 an Fe-based superconductor was discovered in a research project on carrier doping in a LaCuSeO wide-gap semiconductor. This discovery enhanced research activities in the field of superconductivity, where many scientists place particular importance on superconductivity in semiconductors.This focus issue features a variety of topics on superconductivity in semiconductors selected from the 2nd International Workshop on Superconductivity in Diamond and Related Materials (IWSDRM2008, which was held at the National Institute for Materials Science (NIMS, Tsukuba, Japan in July 2008. The 1st workshop was held in 2005 and was published as a special issue in Science and Technology of Advanced Materials (STAM in 2006 (Takano 2006 Sci. Technol. Adv. Mater. 7 S1.The selection of papers describe many important experimental and theoretical studies on superconductivity in semiconductors. Topics on boron-doped diamond include isotope effects (Ekimov et al and the detailed structure of boron sites, and the relation between superconductivity and disorder induced by boron doping. Regarding other semiconductors, the superconducting properties of silicon and SiC (Kriener et al, Muranaka et al and Yanase et al are discussed, and In2O3 (Makise et al is presented as a new superconducting semiconductor. Iron-based superconductors are presented as a new series of high

  8. Frequency modulation of semiconductor disk laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Zolotovskii, I O; Korobko, D A; Okhotnikov, O G [Ulyanovsk State University, Ulyanovsk (Russian Federation)

    2015-07-31

    A numerical model is constructed for a semiconductor disk laser mode-locked by a semiconductor saturable absorber mirror (SESAM), and the effect that the phase modulation caused by gain and absorption saturation in the semiconductor has on pulse generation is examined. The results demonstrate that, in a laser cavity with sufficient second-order dispersion, alternating-sign frequency modulation of pulses can be compensated for. We also examine a model for tuning the dispersion in the cavity of a disk laser using a Gires–Tournois interferometer with limited thirdorder dispersion. (control of radiation parameters)

  9. Carrier concentration induced ferromagnetism in semiconductors

    International Nuclear Information System (INIS)

    Story, T.

    2007-01-01

    In semiconductor spintronics the key materials issue concerns ferromagnetic semiconductors that would, in particular, permit an integration (in a single multilayer heterostructure) of standard electronic functions of semiconductors with magnetic memory function. Although classical semiconductor materials, such as Si or GaAs, are nonmagnetic, upon substitutional incorporation of magnetic ions (typically of a few atomic percents of Mn 2+ ions) and very heavy doping with conducting carriers (at the level of 10 20 - 10 21 cm -3 ) a ferromagnetic transition can be induced in such diluted magnetic semiconductors (also known as semimagnetic semiconductors). In the lecture the spectacular experimental observations of carrier concentration induced ferromagnetism will be discussed for three model semiconductor crystals. p - Ga 1-x Mn x As currently the most actively studied and most perspective ferromagnetic semiconductor of III-V group, in which ferromagnetism appears due to Mn ions providing both local magnetic moments and acting as acceptor centers. p - Sn 1-x Mn x Te and p - Ge 1-x Mn x Te classical diluted magnetic semiconductors of IV-VI group, in which paramagnet-ferromagnet and ferromagnet-spin glass transitions are found for very high hole concentration. n - Eu 1-x Gd x Te mixed magnetic crystals, in which the substitution of Gd 3+ ions for Eu 2+ ions creates very high electron concentration and transforms antiferromagnetic EuTe (insulating compound) into ferromagnetic n-type semiconductor alloy. For each of these materials systems the key physical features will be discussed concerning: local magnetic moments formation, magnetic phase diagram as a function of magnetic ions and carrier concentration as well as Curie temperature and magnetic anisotropy engineering. Various theoretical models proposed to explain the effect of carrier concentration induced ferromagnetism in semiconductors will be briefly discussed involving mean field approaches based on Zener and RKKY

  10. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

    2002-01-01

    -power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

  11. Laser Cooling of 2-6 Semiconductors

    Science.gov (United States)

    2016-08-12

    AFRL-AFOSR-JP-TR-2016-0067 Laser Cooling of II-VI Semiconductors Qihua Xiong NANYANG TECHNOLOGICAL UNIVERSITY Final Report 08/12/2016 DISTRIBUTION A...From - To) 15 May 2013 to 14 May 2016 4. TITLE AND SUBTITLE Laser Cooling of II-VI Semiconductors 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-13-1...13. SUPPLEMENTARY NOTES 14. ABSTRACT The breakthrough of laser cooling in semiconductor has stimulated strong interest in further scaling up towards

  12. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    Science.gov (United States)

    Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  13. Improvements in or relating to semiconductor devices

    International Nuclear Information System (INIS)

    Cooper, K.; Groves, I.S.; Leigh, P.A.; McIntyre, N.; O'Hara, S.; Speight, J.D.

    1980-01-01

    A method of producing semiconductor devices is described consisting of a series of physical and chemical techniques which results in the production of semiconductor devices such as IMPATT diodes of DC-RF efficiency and high reliability (lifetime). The diodes can be mass produced without significant variation of the technology. One of the techniques used is the high energy proton bombardment of the semiconductor material in depth to passivate specific zones. The energy of the protons is increased in stages at intervals of less than 0.11 MeV up to a predetermined maximum energy. (UK)

  14. Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping

    KAUST Repository

    Wang, Yao

    2017-04-12

    We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.

  15. Lead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping

    KAUST Repository

    Wang, Yao; Zhang, Qingyun; Shen, Qian; Cheng, Yingchun; Schwingenschlö gl, Udo; Huang, Wei

    2017-01-01

    We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.

  16. Characterization of a Robotic Manipulator for Dynamic Wind Tunnel Applications

    Science.gov (United States)

    2015-03-26

    Semiconductor strain gages are attached to each beam. These strain-sensitive resistors , connected through a Wheatstone bridge, determine the strain in the beam...Aerdyanmic Performance and Particle Image Velocimetery of Piezo Acuated Biometric Manduca Sexta Engineered Wings Towards Design and Application of a

  17. Resonant tunneling measurements of size-induced strain relaxation

    Science.gov (United States)

    Akyuz, Can Deniz

    Lattice mismatch strain available in such semiconductor heterostructures as Si/SiGe or GaAs/AlGaAs can be employed to alter the electronic and optoelectronic properties of semiconductor structures and devices. When deep submicron structures are fabricated from strained material, strained layers relax by sidewall expansion giving rise to size- and geometry-dependent strain gradients throughout the structure. This thesis describes a novel experimental technique to probe the size-induced strain relaxation by studying the tunneling current characteristics of strained p-type Si/SiGe resonant tunneling diodes. Our current-voltage measurements on submicron strained p-Si/SiGe double- and triple-barrier resonant tunneling structures as a function of device diameter, D, provide experimental access to both the average strain relaxation (which leads to relative shifts in the tunneling current peak positions) and strain gradients (which give rise to a fine structure in the current peaks due to inhomogeneous strain-induced lateral quantization). We find that strain relaxation is significant, with a large fraction of the strain energy relaxed on average in D ≤ 0.25 m m devices. Further, the in-plane potentials that arise from inhomogeneous strain gradients are large. In the D ˜ 0.2 m m devices, the corresponding lateral potentials are approximately parabolic exceeding ˜ 25 meV near the perimeter. These potentials create discrete hole states in double-barrier structures (single well), and coupled hole states in triple-barrier structures (two wells). Our results are in excellent agreement with finite-element strain calculations in which the strained layers are permitted to relax to a state of minimum energy by sidewall expansion. Size-induced strain relaxation will undoubtedly become a serious technological issue once strained devices are scaled down to the deep submicron regime. Interestingly, our calculations predict and our measurements are consistent with the appearance of

  18. OPENING ADDRESS: Heterostructures in Semiconductors

    Science.gov (United States)

    Grimmeiss, Hermann G.

    1996-01-01

    Good morning, Gentlemen! On behalf of the Nobel Foundation, I should like to welcome you to the Nobel Symposium on "Heterostructures in Semiconductors". It gives me great pleasure to see so many colleagues and old friends from all over the world in the audience and, in particular, to bid welcome to our Nobel laureates, Prof. Esaki and Prof. von Klitzing. In front of a different audience I would now commend the scientific and technological importance of heterostructures in semiconductors and emphatically emphasise that heterostructures, as an important contribution to microelectronics and, hence, information technology, have changed societies all over the world. I would also mention that information technology is one of the most important global key industries which covers a wide field of important areas each of which bears its own character. Ever since the invention of the transistor, we have witnessed a fantastic growth in semiconductor technology, leading to more complex functions and higher densities of devices. This development would hardly be possible without an increasing understanding of semiconductor materials and new concepts in material growth techniques which allow the fabrication of previously unknown semiconductor structures. But here and today I will not do it because it would mean to carry coals to Newcastle. I will therefore not remind you that heterostructures were already suggested and discussed in detail a long time before proper technologies were available for the fabrication of such structures. Now, heterostructures are a foundation in science and part of our everyday life. Though this is certainly true, it is nevertheless fair to say that not all properties of heterostructures are yet understood and that further technologies have to be developed before a still better understanding is obtained. The organisers therefore hope that this symposium will contribute not only to improving our understanding of heterostructures but also to opening new

  19. Microstructure and strain distribution in freestanding Si membrane strained by Si{sub x}N{sub y} deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gao Hongye, E-mail: qgaohongye@msn.com [Faculty of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Ikeda, Ken-ichi; Hata, Satoshi; Nakashima, Hideharu [Faculty of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Wang Dong; Nakashima, Hiroshi [Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan)

    2010-09-25

    Research highlights: {yields} Strain is introduced by deposition of amorphous Si{sub x}N{sub y} to improve the carrier mobility for a relatively large-size freestanding semiconductor film, which can be used for the fabrication of relatively large devices such like a bipolar junction transistor. However, standard Raman spectroscopy and X-ray diffraction cannot provide sufficient lateral resolution to the strain in a relatively long (x {mu}m in length) and thin (x nm in thickness) freestanding semiconductor film. {yields} In present research, strain in a bridge-shaped freestanding Si membrane (FSSM) was measured by convergent-beam electron diffraction (CBED) and finite element method (FEM). Compressive strain distribution was shown in three dimensions (3D) in FSSM, where no threading dislocation or stacking fault was found. Relaxation of the strain in FSSM in 3D was discussed based on a comparison of the strain magnitudes in FSSM as measured by CBED and FEM. - Abstract: Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous Si{sub x}N{sub y} layer was measured by convergent-beam electron diffraction (CBED). CBED results show that the strain magnitude depends negatively on the FSSM thickness. FEM is a supplement of the result of CBED due to the relaxation of TEM samples during fabricating. The FEM analysis results ascertain the strain property in three dimensions, and show that the strain magnitude depends negatively on the length of FSSM, and the magnitude of the compressive strain in FSSM increases as the position is closer to the upper Si/Si{sub x}N{sub y} interface.

  20. Novel engineered compound semiconductor heterostructures for advanced electronics applications

    Science.gov (United States)

    Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

    1992-06-01

    To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

  1. Charge separation sensitized by advanced II-VI semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kelley, David F. [Univ.of California, Merced, CA (United States)

    2017-04-11

    This proposal focuses on how the composition and morphology of pure and alloyed II-VI semiconductor heterostructures control their spectroscopic and dynamical properties. The proposed research will use a combination of synthesis development, electron microscopy, time-resolved electronic spectroscopy and modeling calculations to study these nanostructures. The proposed research will examine the extent to which morphology, compression due to lattice mismatch and alloy effects can be used to tune the electron and hole energies and the spectroscopic properties of II-VI heterojunctions. It will also use synthesis, optical spectroscopy and HRTEM to examine the role of lattice mismatch and hence lattice strain in producing interfacial defects, and the extent to which defect formation can be prevented by controlling the composition profile through the particles and across the interfaces. Finally, we will study the magnitude of the surface roughness in core/shell nanostructures and the role of shell thickness variability on the inhomogeneity of interfacial charge transfer rates.

  2. Life-cycle assessment of semiconductors

    CERN Document Server

    Boyd, Sarah B

    2012-01-01

    Life-Cycle Assessment of Semiconductors presents the first and thus far only available transparent and complete life cycle assessment of semiconductor devices. A lack of reliable semiconductor LCA data has been a major challenge to evaluation of the potential environmental benefits of information technologies (IT). The analysis and results presented in this book will allow a higher degree of confidence and certainty in decisions concerning the use of IT in efforts to reduce climate change and other environmental effects. Coverage includes but is not limited to semiconductor manufacturing trends by product type and geography, unique coverage of life-cycle assessment, with a focus on uncertainty and sensitivity analysis of energy and global warming missions for CMOS logic devices, life cycle assessment of flash memory and life cycle assessment of DRAM. The information and conclusions discussed here will be highly relevant and useful to individuals and institutions. The book also: Provides a detailed, complete a...

  3. Semiconductor applications of plasma immersion ion implantation ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 25; Issue 6. Semiconductor applications of plasma immersion ion implantation technology ... Department of Electronic Science, Kurukshetra University, Kurukshetra 136 119, India ...

  4. Second harmonic spectroscopy of semiconductor nanostructures

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Yu, Ping; Bozhevolnyi, Sergey I.

    1999-01-01

    Semiconductor nanostructures and their application to optoelectronic devices have attracted much attention recently. Lower-dimensional structures, and in particular quantum dots, are highly anisotropic resulting in broken symmetry as compared to their bulk counterparts. This is not only reflected...

  5. High brightness semiconductor lasers with reduced filamentation

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter.; Skovgaard, Peter M. W.

    1999-01-01

    High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture...

  6. Semiconductors detectors: basics principals, fabrication and repair

    International Nuclear Information System (INIS)

    Souza Coelho, L.F. de.

    1982-05-01

    The fabrication and repairing techniques of semiconductor detectors, are described. These methods are shown in the way they are applied by the semiconductor detector laboratory of the KFA-Julich, where they have been developed during the last 15 years. The history of the semiconductor detectors is presented here, being also described the detector fabrication experiences inside Brazil. The key problems of manufacturing are raised. In order to understand the fabrication and repairing techniques the working principles of these detectors, are described. The cases in which worked during the stay in the KFA-Julich, particularly the fabrication of a plane Ge (Li) detector, with side entry, and the repair of a coaxial Ge (Li) is described. The vanguard problems being researched in Julich are also described. Finally it is discussed a timetable for the semiconductor detector laboratory of the UFRJ, which laboratory is in the mounting stage now. (Author) [pt

  7. Photocatalytic semiconductors synthesis, characterization, and environmental applications

    CERN Document Server

    Hernández-Ramírez, Aracely

    2014-01-01

    This critical volume examines the different methods used for the synthesis of a great number of photocatalysts, including TiO2, ZnO and other modified semiconductors, as well as characterization techniques used for determining the optical, structural and morphological properties of the semiconducting materials. Additionally, the authors discuss photoelectrochemical methods for determining the light activity of the photocatalytic semiconductors by means of measurement of properties such as band gap energy, flat band potential and kinetics of hole and electron transfer. Photocatalytic Semiconductors: Synthesis, Characterization and Environmental Applications provide an overview of the semiconductor materials from first- to third-generation photocatalysts and their applications in wastewater treatment and water disinfection. The book further presents economic and toxicological aspects in the production and application of photocatalytic materials.

  8. Analysis and simulation of semiconductor devices

    CERN Document Server

    Selberherr, Siegfried

    1984-01-01

    The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the s...

  9. Semiconductor-nanocrystal/conjugated polymer thin films

    Science.gov (United States)

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  10. Advances in semiconductor photodetectors for scintillators

    International Nuclear Information System (INIS)

    Farrell, R.; Olschner, F.; Shah, K.; Squillante, M.R.

    1997-01-01

    Semiconductors photodetectors have long seemed an attractive alternative for scintillation detection, but only recently have semiconductor photodiodes been proven suitable for some room temperature applications. There are many applications, however for which the performance of standard silicon p-i-n photodiodes is not satisfactory. This article reviews recent progress in two different families of novel semiconductor photodetectors: (1) wide bandgap compound semiconductors and (2) silicon photodetectors with enhanced signal-to-noise ratio. The compounds discussed and compared in this paper are HgI 2 , PbI 2 , InI, TlBr, TlBr 1-x I x and HgBr 1-x I x . The paper will also examine unity gain silicon drift diodes and avalanche photodiodes with maximum room temperature gain greater than 10000. (orig.)

  11. Semiconductor Photonic Components for RF Applications

    National Research Council Canada - National Science Library

    Yu, Paul

    2002-01-01

    ... time delay beam formation and beam steering subsystem in phased array antennas. Device and material approaches were investigated to improve the modulator based on semiconductor structures for achieving high spur free dynamic range (SFDR...

  12. Semiconductor Photonic Components for RF Applications

    National Research Council Canada - National Science Library

    Yu, Paul

    2001-01-01

    ... delay beam formation and beam steering subsystems in phased array antennas. Device and material approaches were investigated to improve the modulator based on semiconductor structures for achieving high spur free dynamic range (SFDR...

  13. X-ray absorption spectroscopy of semiconductors

    CERN Document Server

    Ridgway, Mark

    2015-01-01

    X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-sit...

  14. Revenue sharing in semiconductor industry supply chain ...

    Indian Academy of Sciences (India)

    to reduce demand opportunities, inventory needs and production efficiencies, in addition to reducing .... design based on coalition structures in semiconductor supply chain. ..... supplier/contract manufacturer for a product/component category.

  15. Small-signal analysis of granular semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Varpula, Aapo; Sinkkonen, Juha; Novikov, Sergey, E-mail: aapo.varpula@tkk.f [Department of Micro and Nanosciences, Aalto University, PO Box 13500, FI-00076 Aalto, Espoo (Finland)

    2010-11-01

    The small-signal ac response of granular n-type semiconductors is calculated analytically using the drift-diffusion theory when electronic trapping at grain boundaries is present. An electrical equivalent circuit (EEC) model of a granular n-type semiconductor is presented. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is very good in a broad frequency range at low dc bias voltages.

  16. Small-signal analysis of granular semiconductors

    International Nuclear Information System (INIS)

    Varpula, Aapo; Sinkkonen, Juha; Novikov, Sergey

    2010-01-01

    The small-signal ac response of granular n-type semiconductors is calculated analytically using the drift-diffusion theory when electronic trapping at grain boundaries is present. An electrical equivalent circuit (EEC) model of a granular n-type semiconductor is presented. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is very good in a broad frequency range at low dc bias voltages.

  17. Nitride semiconductor devices fundamentals and applications

    CERN Document Server

    Morkoç, Hadis

    2013-01-01

    This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues that will enable them to follow the latest technological research. It also covers important applications, including LED and lighting, semiconductor lasers, high power switching devices, and detectors. This balanced and up-to-date treatment makes the text an essential educational tool for both advanced students and professionals in the electronics industry.

  18. Gain and Index Dynamics in Semiconductor Lasers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    Semiconductor optical amplifiers (SOAs) provide ultrafast, i.e. broadband components for optical communication systems. They enter not only as signal generators and amplifiers, but also as nonlinear elements for ultrafast signal processing such as wavelength conversion, switching, and regeneration...... changed character from bulk semiconductor to quantum wells and most recently to quantum dots. By quantum confinement of the carriers, the light-matter interactions can be significantly modified and the optical properties, including dynamics, can be engineered to match the required functionalities...

  19. Semiconductor saturable absorbers for ultrafast THz signals

    DEFF Research Database (Denmark)

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    We demonstrate saturable absorber behavior of n-type semiconductors in the THz frequency range using nonlinear THz spectroscopy. Further, we observe THz pulse shortening and increase of the group refractive index at high field strengths.......We demonstrate saturable absorber behavior of n-type semiconductors in the THz frequency range using nonlinear THz spectroscopy. Further, we observe THz pulse shortening and increase of the group refractive index at high field strengths....

  20. Work on the ATLAS semiconductor tracker barrel

    CERN Multimedia

    Maximilien Brice

    2005-01-01

    Precision work is performed on the semiconductor tracker barrel of the ATLAS experiment. All work on these delicate components must be performed in a clean room so that impurities in the air, such as dust, do not contaminate the detector. The semiconductor tracker will be mounted in the barrel close to the heart of the ATLAS experiment to detect the path of particles produced in proton-proton collisions.