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Sample records for semiconductor saturable absorber

  1. Semiconductor saturable absorbers for ultrafast terahertz signals

    OpenAIRE

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    2010-01-01

    We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP, and Ge in the terahertz THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of semiconductors at high electron momentum states, due to conduction band onparabolicity and scattering into satellite valleys in strong THz fields. Saturable absorber parameters, such as linear and nonsaturable transmission, and saturation fluen...

  2. Semiconductor saturable absorbers for ultrafast terahertz signals

    OpenAIRE

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    2010-01-01

    We demonstrate saturable absorber behavior of n-type semiconductorsGaAs,GaP, and Ge in the terahertz (THz) frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of semiconductors at high electron momentum states, due to conduction band nonparabolicity and scattering into satellite valleys in strong THz fields. Saturable absorber parameters, such as linear and nonsaturable transmission, and saturation flue...

  3. Semiconductor saturable absorbers for ultrafast terahertz signals

    DEFF Research Database (Denmark)

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    2010-01-01

    We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP, and Ge in the terahertz THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of semiconductors at high electron momentum...

  4. Semiconductor saturable absorbers for ultrafast THz signals

    DEFF Research Database (Denmark)

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    We demonstrate saturable absorber behavior of n-type semiconductors in the THz frequency range using nonlinear THz spectroscopy. Further, we observe THz pulse shortening and increase of the group refractive index at high field strengths.......We demonstrate saturable absorber behavior of n-type semiconductors in the THz frequency range using nonlinear THz spectroscopy. Further, we observe THz pulse shortening and increase of the group refractive index at high field strengths....

  5. Excitable solitons in a semiconductor laser with a saturable absorber

    Science.gov (United States)

    Turconi, Margherita; Prati, Franco; Barland, Stéphane; Tissoni, Giovanna

    2015-11-01

    Self-pulsing cavity solitons may exist in a semiconductor laser with an intracavity saturable absorber. They show locally the passive Q -switching behavior that is typical of lasers with saturable absorbers in the plane-wave approximation. Here we show that excitable cavity solitons are also possible in a suitable parameter range and characterize their excitable dynamics and properties.

  6. Femtosecond Yb:YAG laser using semiconductor saturable absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Hoenninger, C.; Zhang, G.; Keller, U. [Ultrafast Laser Physics, Institute of Quantum Electronics, Swiss Federal Institute of Technology, ETH Hoenggerberg--HPT, CH-8093 Zuerich (Switzerland); Giesen, A. [Institut fuer Strahlwerkzeuge, Universitaet Stuttgart, Pfaffenwaldring 43, D-70569 Stuttgart (Germany)

    1995-12-01

    We demonstrate a passively mode-locked femtosecond Yb:YAG laser using different semiconductor saturable absorber devices, a high-finesse and a low-finesse antiresonant Fabry{endash}Perot saturable absorber. We achieved pulses as short as 540 fs with dispersion compensation and 1.7-ps pulses without dispersion compensation. We also mode locked the laser at either 1.03 or 1.05 {mu}m by adjusting the band gap and antiresonance wavelength design of the antiresonant Fabry{endash}Perot saturable absorber. {copyright} {ital 1995 Optical Society of America.}

  7. Microscopic analysis of saturable absorbers: Semiconductor saturable absorber mirrors versus graphene

    Energy Technology Data Exchange (ETDEWEB)

    Hader, J.; Moloney, J. V. [Nonlinear Control Strategies, Inc., 3542 N. Geronimo Ave., Tucson, Arizona 85705 (United States); College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States); Yang, H.-J.; Scheller, M. [College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States); Koch, S. W. [Department of Physics and Materials Sciences Center, Philipps Universität Marburg, Renthof 5, 35032 Marburg (Germany)

    2016-02-07

    Fully microscopic many-body calculations are used to study the influence of strong sub-picosecond pulses on the carrier distributions and corresponding optical response in saturable absorbers used for mode-locking—semiconductor (quantum well) saturable absorber mirrors (SESAMs) and single layer graphene based saturable absorber mirrors (GSAMs). Unlike in GSAMs, the saturation fluence and recovery time in SESAMs show a strong spectral dependence. While the saturation fluence in the SESAM is minimal at the excitonic bandgap, the optimal recovery time and least pulse distortion due to group delay dispersion are found for excitation higher in the first subband. For excitation near the SESAM bandgap, the saturation fluence is about one tenth of that in the GSAM. At energies above the bandgap, the fluences in both systems become similar. A strong dependence of the saturation fluence on the pulse width in both systems is caused by carrier relaxation during the pulse. The recovery time in graphene is found to be about two to four times faster than that in the SESAMs. The occurrence of negative differential transmission in graphene is shown to be caused by dopant related carriers. In SESAMs, a negative differential transmission is found when exciting below the excitonic resonance where excitation induced dephasing leads to an enhancement of the absorption. Comparisons of the simulation data to the experiment show a very good quantitative agreement.

  8. Microscopic analysis of saturable absorbers: Semiconductor saturable absorber mirrors versus graphene

    Science.gov (United States)

    Hader, J.; Yang, H.-J.; Scheller, M.; Moloney, J. V.; Koch, S. W.

    2016-02-01

    Fully microscopic many-body calculations are used to study the influence of strong sub-picosecond pulses on the carrier distributions and corresponding optical response in saturable absorbers used for mode-locking—semiconductor (quantum well) saturable absorber mirrors (SESAMs) and single layer graphene based saturable absorber mirrors (GSAMs). Unlike in GSAMs, the saturation fluence and recovery time in SESAMs show a strong spectral dependence. While the saturation fluence in the SESAM is minimal at the excitonic bandgap, the optimal recovery time and least pulse distortion due to group delay dispersion are found for excitation higher in the first subband. For excitation near the SESAM bandgap, the saturation fluence is about one tenth of that in the GSAM. At energies above the bandgap, the fluences in both systems become similar. A strong dependence of the saturation fluence on the pulse width in both systems is caused by carrier relaxation during the pulse. The recovery time in graphene is found to be about two to four times faster than that in the SESAMs. The occurrence of negative differential transmission in graphene is shown to be caused by dopant related carriers. In SESAMs, a negative differential transmission is found when exciting below the excitonic resonance where excitation induced dephasing leads to an enhancement of the absorption. Comparisons of the simulation data to the experiment show a very good quantitative agreement.

  9. Performance of external cavity mode-locked semiconductor lasers employing reverse biased saturable absorbers

    DEFF Research Database (Denmark)

    Yvind, Kresten; Skovgaard, P.M.W.; Mørk, Jesper

    2002-01-01

    We have experimentally investigated the performance of external cavity mode-locked semiconductor lasers employing reverse biased saturable absorbers. We have measured the magnitude of trailing pulses when varying the chip length and studied the pulse quality when changing the driving conditions...

  10. Nonlinear Effects in CW Mode-Locked Solid-State Lasers with Semiconductor Saturable Absorbers

    OpenAIRE

    Kalashnikov, V. L.; Krimer, D.O.

    2000-01-01

    The influence of nonlinear properties of semiconductor saturable absorbers on ultrashort pulse generation was investigated. It was shown, that linewidth enhancement, quadratic and linear ac Stark effect contribute essentially to the mode locking in cw solid-state lasers, that can increase the pulse stability, decrease pulse duration and reduce the mode locking threshold

  11. GaN-based semiconductor saturable absorber mirror operating around 415 nm

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, N. [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)]. E-mail: elexn@nus.edu.sg; Lin, F. [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Li, H.P. [Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Liu, H.F. [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Liu, W. [Institute of Materials Research and Engineering, Singapore 117602 (Singapore); Ji, W. [Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Chua, S.J. [Institute of Materials Research and Engineering, Singapore 117602 (Singapore)

    2007-03-26

    We report a broadband GaN-based semiconductor saturable absorber mirror (SESAM) operating around 415 nm. The GaInN quantum wells (QWs) acting as saturable absorbers were grown by metal-organic chemical vapor deposition (MOCVD). A broadband dielectric high-reflective distributed Bragg reflector (DBR) was deposited onto the QW sample using plasma-enhanced chemical vapor deposition (PECVD) to build the SESAM. The SESAM has a stopband of over 100 nm. The linear and nonlinear transmission/absorption from QWs and the reflectance from DBR and SESAM were studied. This SESAM can be applied in passively mode-locking blue lasers such as GaN-based semiconductor lasers for producing ultra-short optical pulses.

  12. Passive mode-locking in semiconductor lasers with saturable absorbers bandgap shifted through quantum well intermixing

    OpenAIRE

    Pusino, Vincenzo; Strain, Michael J.; Sorel, Marc

    2014-01-01

    Passive mode-locking in semiconductor lasers in a Fabry–Perot configuration with a bandgap blueshift applied to the saturable absorber (SA) section has been experimentally characterized. For the first time a fully post-growth technique, quantum well intermixing, was adopted to modify the material bandgap in the SA section. The measurements showed not only an expected narrowing of the pulse width but also a significant expansion of the range of bias conditions generating a stable train of opti...

  13. Semiconductor saturable absorbers with recovery time controlled by lattice mismatch and band-gap engineering

    Energy Technology Data Exchange (ETDEWEB)

    Suomalainen, S. [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)], E-mail: soile.suomalainen@tut.fi; Guina, M.; Hakulinen, T.; Koskinen, R.; Paajaste, J.; Karjalainen, M.; Saarinen, M. [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland); Marcinkevicius, S. [Royal Institute of Technology, Electrum 229, 16440 Kista (Sweden); Okhotnikov, O.G. [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)

    2008-02-15

    The recovery time of absorption in semiconductor quantum-well structures is one of the key parameters that determines the performance of pulsed lasers mode-locked or Q-switched by semiconductor saturable absorbers. In this paper we discuss new methods to control the recovery time of absorption. The first method is based on controlling the crystalline quality of the absorbing material and thus the density of non-radiative recombination centers that are responsible for the fast recovery of the absorption. With this technique, we were able to fabricate semiconductor saturable absorber mirrors (SESAMs) with recovery times of about 4.5 ps at 1 {mu}m and 40 ps at 1.55 {mu}m. Another approach that we propose and demonstrate in this paper is based on band-gap engineering that enables short recovery times to be achieved through fast relaxation of excited photocarriers via intraband scattering. A 24 ps carrier decay time was achieved by placing deep quantum-wells next to the shallow quantum-wells responsible for the nonlinear absorption. We demonstrated that the recovery time can be changed by modifying the thickness of the deep and shallow quantum-wells.

  14. Watt-level passively Q-switched heavily Er(3+)-doped ZBLAN fiber laser with a semiconductor saturable absorber mirror

    National Research Council Canada - National Science Library

    Shen, Yanlong; Wang, Yishan; Luan, Kunpeng; Huang, Ke; Tao, Mengmeng; Chen, Hongwei; Yi, Aiping; Feng, Guobin; Si, Jinhai

    2016-01-01

    A diode-cladding pumped mid-infrared passively Q-switched Er(3+)-doped ZBLAN fiber laser with an average output power of watt-level based on a semiconductor saturable absorber mirror (SESAM) is demonstrated...

  15. Watt-level passively Q-switched heavily Er3+-doped ZBLAN fiber laser with a semiconductor saturable absorber mirror

    National Research Council Canada - National Science Library

    Yanlong Shen; Yishan Wang; Kunpeng Luan; Ke Huang; Mengmeng Tao; Hongwei Chen; Aiping Yi; Guobin Feng; Jinhai Si

    2016-01-01

    A diode-cladding pumped mid-infrared passively Q-switched Er3+ -doped ZBLAN fiber laser with an average output power of watt-level based on a semiconductor saturable absorber mirror (SESAM) is demonstrated...

  16. Bifurcation analysis of a semiconductor laser with saturable absorber and delayed optical feedback

    CERN Document Server

    Terrien, Soizic; Broderick, Neil G R

    2016-01-01

    Semiconductor lasers exhibit a wealth of dynamics, from emission of a constant beam of light, to periodic oscillations and excitability. Self-pulsing regimes, where the laser periodically releases a short pulse of light, are particularly interesting for many applications, from material science to telecommunications. Self-pulsing regimes need to produce pulses very regularly and, as such, they are also known to be particularly sensitive to perturbations, such as noise or light injection. We investigate the effect of delayed optical feedback on the dynamics of a self-pulsing semiconductor laser with saturable absorber (SLSA). More precisely, we consider the Yamada model with delay -- a system of three delay-differential equations (DDEs) for two slow and one fast variable -- which has been shown to reproduce accurately self-pulsing features as observed in SLSA experimentally. This model is also of broader interest because it is quite closely related to mathematical models of other self-pulsing systems, such as e...

  17. Semiconductor saturable absorber Q-switching of a holmium micro-laser.

    Science.gov (United States)

    Lan, Ruijun; Mateos, Xavier; Wang, Yicheng; Serres, Josep Maria; Loiko, Pavel; Li, Jiang; Pan, Yubai; Griebner, Uwe; Petrov, Valentin

    2017-03-06

    We report on a Holmium micro-laser passively Q-switched by a semiconductor saturable absorber (SSA), for the first time to the best of our knowledge. It is based on a 1 at.% Ho:YAG ceramic with good energy storage capability and several commercial transmission-type SSAs with 0.24% modulation depth. Under in-band pumping by a Tm fiber laser at 1910 nm, the Ho micro-laser generated 450 mW at 2089 nm with 37% slope efficiency. Stable 89 ns, 3.2 μJ pulses are achieved at a repetition rate of 141 kHz. Further shortening of the laser pulses is feasible with the increase of the modulation depth of the SSA while power scaling may lead to Q-switching at MHz-range repetition rates.

  18. Separating the coherent and incoherent effects in optical correlation experiments on semiconductors and other saturable absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Bello, A.F.; Erskine, D.J.; Radousky, H.B. [Lawrence Livermore National Laboratory, Livermore, California 94551 (United States)

    1996-02-01

    In some pump{endash}probe optical correlation experiments, the measured signal versus delay between pulses generally consists of two components: the convolution of the pulse autocorrelation with the sample impulse response, and a coherent artifact. The latter can obscure the first component near zero delay where fast time scale processes will be manifest. We present a mathematical description of the relative shapes and sizes of the two components, so that a fitting process can separate them. This can yield both the dephasing and relaxation times of saturable absorbers such as semiconductors. The method is particularly appropriate when the orientational dephasing and relaxation times are of the same time scale as the laser pulse width. {copyright} {ital 1996 American Institute of Physics.}

  19. Self-starting stretched-pulse fiber laser mode locked and stabilized with slow and fast semiconductor saturable absorbers.

    Science.gov (United States)

    Guina, M; Xiang, N; Vainionpää, A; Okhotnikov, O G; Sajavaara, T; Keinonen, J

    2001-11-15

    A self-starting stretched-pulse mode-locked erbium-doped fiber laser that uses fast and slow semiconductor saturable absorbers is described. By using two absorbers, we obtained reliable operation at a fundamental repetition rate with 250 pJ of pulse energy without multiple-pulse breakup. External chirp compensation was used to compress the highly chirped pulses to durations of 135 fs.

  20. A tri-wavelength synchronous mode-locked Nd:SYSO laser with a semiconductor saturable absorber mirror

    Science.gov (United States)

    Hou, J.; Zheng, L. H.; He, J. L.; Xu, J.; Zhang, B. T.; Wang, Z. W.; Lou, F.; Wang, R. H.; Liu, X. M.

    2014-03-01

    We report on the generation of passive mode locking of a Nd:Sc0.2Y 0.8SiO5 (Nd:SYSO) laser using a semiconductor saturable absorber mirror. Linear polarized, tri-wavelength synchronous mode-locked pulses were obtained for laser emissions at 1075.55, 1076.80 and 1078.20 nm. An interference pattern was observed in the autocorrelation trace, the beat pulse had a repetition rate of 0.345 THz and the beat pulse width was 646 fs. Numerical simulation was conducted to clarify the formation of the autocorrelation trace.

  1. A temperature sensor based on switchable dual-wavelength fiber Bragg grating laser with a semiconductor saturable absorber mirror

    Science.gov (United States)

    Li, Qi; Huang, Kai-qiang; Chen, Hai-yan

    2015-11-01

    A temperature sensor based on a switchable dual-wavelength fiber Bragg grating (FBG) laser with a semiconductor saturable absorber mirror (SESAM) is presented and demonstrated experimentally. The repetition rate of Q-switched pulses is ~17 kHz. The results demonstrate that the measured temperature has good linearity to the wavelength spacing of the two lasing wavelengths and has a temperature sensitivity of 21 pm/ºC covering a range of -10—22 °C. The experimental results prove the feasibility of the proposed temperature sensor.

  2. All-fiber wavelength-tunable picosecond nonlinear reflectivity measurement setup for characterization of semiconductor saturable absorber mirrors

    Science.gov (United States)

    Viskontas, K.; Rusteika, N.

    2016-09-01

    Semiconductor saturable absorber mirror (SESAM) is the key component for many passively mode-locked ultrafast laser sources. Particular set of nonlinear parameters is required to achieve self-starting mode-locking or avoid undesirable q-switch mode-locking for the ultra-short pulse laser. In this paper, we introduce a novel all-fiber wavelength-tunable picosecond pulse duration setup for the measurement of nonlinear properties of saturable absorber mirrors at around 1 μm center wavelength. The main advantage of an all-fiber configuration is the simplicity of measuring the fiber-integrated or fiber-pigtailed saturable absorbers. A tunable picosecond fiber laser enables to investigate the nonlinear parameters at different wavelengths in ultrafast regime. To verify the capability of the setup, nonlinear parameters for different SESAMs with low and high modulation depth were measured. In the operating wavelength range 1020-1074 nm, <1% absolute nonlinear reflectivity accuracy was demonstrated. Achieved fluence range was from 100 nJ/cm2 to 2 mJ/cm2 with corresponding intensity from 10 kW/cm2 to 300 MW/cm2.

  3. Slow light in saturable absorbers

    OpenAIRE

    Macke, Bruno; Ségard, Bernard

    2008-01-01

    International audience; In connection with the experiments recently achieved on doped crystals, biological samples, doped optical fibers and semiconductor heterostructures, we revisit the theory of the propagation of a pulse-modulated light in a saturable absorber. Explicit analytical expressions of the transmitted pulse are obtained, enabling us to determine the parameters optimizing the time-delay of the transmitted pulse with respect to the incident pulse. We finally compare the maximum fr...

  4. Watt-level passively Q-switched heavily Er3+-doped ZBLAN fiber laser with a semiconductor saturable absorber mirror

    Science.gov (United States)

    Shen, Yanlong; Wang, Yishan; Luan, Kunpeng; Huang, Ke; Tao, Mengmeng; Chen, Hongwei; Yi, Aiping; Feng, Guobin; Si, Jinhai

    2016-01-01

    A diode-cladding pumped mid-infrared passively Q-switched Er3+-doped ZBLAN fiber laser with an average output power of watt-level based on a semiconductor saturable absorber mirror (SESAM) is demonstrated. Stable pulse train was produced at a slope efficiency of 17.8% with respect to launched pump power. The maximum average power of 1.01 W at a repetition rate of 146.3 kHz was achieved with a corresponding pulse energy of 6.9 μJ, from which the maximum peak power was calculated to be 21.9 W. To the best of our knowledge, the average power and the peak power are the highest in 3 μm region passively Q-switched fiber lasers. The influence of gain fiber length on the operation regime of the fiber laser has been investigated in detail. PMID:27225029

  5. Watt-level passively Q-switched heavily Er3+-doped ZBLAN fiber laser with a semiconductor saturable absorber mirror

    Science.gov (United States)

    Shen, Yanlong; Wang, Yishan; Luan, Kunpeng; Huang, Ke; Tao, Mengmeng; Chen, Hongwei; Yi, Aiping; Feng, Guobin; Si, Jinhai

    2016-05-01

    A diode-cladding pumped mid-infrared passively Q-switched Er3+-doped ZBLAN fiber laser with an average output power of watt-level based on a semiconductor saturable absorber mirror (SESAM) is demonstrated. Stable pulse train was produced at a slope efficiency of 17.8% with respect to launched pump power. The maximum average power of 1.01 W at a repetition rate of 146.3 kHz was achieved with a corresponding pulse energy of 6.9 μJ, from which the maximum peak power was calculated to be 21.9 W. To the best of our knowledge, the average power and the peak power are the highest in 3 μm region passively Q-switched fiber lasers. The influence of gain fiber length on the operation regime of the fiber laser has been investigated in detail.

  6. Low threshold diode-pumped picosecond mode-locked Nd:YAG laser with a semiconductor saturable absorber mirror

    Science.gov (United States)

    Eshghi, M. J.; Majdabadi, A.; Koohian, A.

    2017-01-01

    In this paper, a low threshold diode pumped passively mode-locked Nd:YAG laser has been demonstrated by using a semiconductor saturable absorber mirror. The threshold power for continuous-wave mode-locking is relatively low, about 3.2 W. The resonator stability across the pump power has been analytically examined. Moreover, the mode overlap between the pump beam and the laser fundamental mode has been simulated by MATLAB software. Adopting Z-shaped resonator configuration and suitable design of the resonator’s arm lengths, has enabled the author to prepare mode-locking conditions, and obtain 40 ps pulses with 112 MHz pulse repetition rate. The laser output was stable without any Q switched instability. To the best of our knowledge, this is the lowest threshold for CW mode-locking operation of a Nd:YAG laser.

  7. Q-switched mode-locked and azimuthally polarized Nd:GdVO4 laser with semiconductor saturable absorber mirror

    Science.gov (United States)

    Hong, Kun-Guei; Hung, Bi-Jin; Lin, Shih-Ting; Wei, Ming-Dar

    2016-06-01

    A Q-switched mode-locked Nd:GdVO4 laser with azimuthal polarization was generated using a semiconductor saturable absorber mirror. On the basis of the birefringence of the laser crystal inducing different equivalent lengths for ordinary and extraordinary rays, beams were azimuthally polarized around the edge of a stable cavity region. At a pump power of 9 W, the repetition rate and width for the Q-switched envelope were 318 kHz and 0.91 µs, and the mode-locked pulse repetition rate and pulse width were 455 MHz and 65 ps, respectively. The degree of polarization was controllable up to 95.4 ± 1.4%.

  8. Diode-pumped passively mode-locked 1.3-microm Nd:YVO(4) and Nd:YLF lasers by use of semiconductor saturable absorbers.

    Science.gov (United States)

    Fluck, R; Zhang, G; Keller, U; Weingarten, K J; Moser, M

    1996-09-01

    We report on self-starting passively mode-locked diode-pumped 1.3-microm lasers obtained by use of semiconductor saturable absorbers. We achieved pulses as short as 4.6 ps in Nd:YVO(4) and 5.7 ps in Nd:YLF with average output powers of 50 and 130 mW, respectively.

  9. Metamaterial saturable absorber mirror.

    Science.gov (United States)

    Dayal, Govind; Ramakrishna, S Anantha

    2013-02-01

    We propose a metamaterial saturable absorber mirror at midinfrared wavelengths that can show a saturation of absorption with intensity of incident light and switch to a reflecting state. The design consists of an array of circular metallic disks separated by a thin film of vanadium dioxide (VO(2)) from a continuous metallic film. The heating due to the absorption in the absorptive state causes the VO(2) to transit to a metallic phase from the low temperature insulating phase. The metamaterial switches from an absorptive state (R≃0.1%) to a reflective state (R>95%) for a specific threshold intensity of the incident radiation corresponding to the phase transition of VO(2), resulting in the saturation of absorption in the metamaterial. The computer simulations show over 99.9% peak absorbance, a resonant bandwidth of about 0.8 μm at 10.22 μm wavelengths, and saturation intensity of 140 mW cm(-2) for undoped VO(2) at room temperature. We also carried out numerical simulations to investigate the effects of localized heating and temperature distribution by solving the heat diffusion problem.

  10. Characterization of the absorbance bleaching in AllnAs/AlGaInAs multiple-quantum wells for semiconductor saturable absorbers.

    Energy Technology Data Exchange (ETDEWEB)

    Wanke, Michael Clement; Cederberg, Jeffrey George; Alliman, Darrell L.; Bender, Daniel A.; Cross, Karen Charlene; Waldmueller, Ines

    2010-05-01

    Semiconductor saturable absorbers (SESAs) introduce loss into a solid-state laser cavity until the cavity field bleaches the absorber producing a high-energy pulse. Multiple quantum wells (MQWs) of AlGaInAs grown lattice-matched to InP have characteristics that make them attractive for SESAs. The band gap can be tuned around the target wavelength, 1064 nm, and the large conduction band offset relative to the AlInAs barrier material helps reduces the saturation fluence, and transparent substrate reduces nonsaturable losses. We have characterized the lifetime of the bleaching process, the modulation depth, the nonsaturable losses, and the saturation fluence associated with SESAs. We compare different growth conditions and structure designs. These parameters give insight into the quality of the epitaxy and effect structure design has on SESA performance in a laser cavity. AlGaInAs MQWs were grown by MOVPE using a Veeco D125 machine using methyl-substituted metal-organics and hydride sources at a growth temperature of 660 C at a pressure of 60 Torr. A single period of the basic SESA design consists of approximately 130 to 140 nm of AlInAs barrier followed by two AlGaInAs quantum wells separated by 10 nm AlInAs. This design places the QWs near the nodes of the 1064-nm laser cavity standing wave. Structures consisting of 10-, 20-, and 30-periods were grown and evaluated. The SESAs were measured at 1064 nm using an optical pump-probe technique. The absorbance bleaching lifetime varies from 160 to 300 nsec. The nonsaturable loss was as much as 50% for structures grown on n-type, sulfur-doped InP substrates, but was reduced to 16% when compensated, Fe-doped InP substrates were used. The modulation depth of the SESAs increased linearly from 9% to 30% with the number of periods. We are currently investigating how detuning the QW transition energy impacts the bleaching characteristics. We will discuss how each of these parameters impacts the laser performance.

  11. Low threshold of a continuous-wave mode-locked and azimuthally polarized Nd:YVO4 laser with a semiconductor saturable absorber mirror

    Science.gov (United States)

    Hong, Kun-Guei; Hung, Bi-Jin; Wei, Ming-Dar

    2016-12-01

    On the basis of the birefringence of laser crystals, a continuous-wave mode-locked Nd:YVO4 laser with azimuthal polarization was fabricated using a semiconductor saturable absorber mirror. When compared to the method based on thermally induced birefringence, the threshold was sufficiently lower than that in previous studies with about the one-tenth ratio of threshold. The repetition rate and pulse width for the continuous-wave mode-locked pulse were 125 MHz and 77 ps, respectively, at a pump power of 11 W. The degree of polarization was 90.0% ± 1.9%.

  12. Dual-central-wavelength passively mode-locked diffusion-bonded Nd:YVO4/Nd:GdVO4 laser with a semiconductor saturable absorber mirror

    Science.gov (United States)

    Chang, F. L.; Sung, C. L.; Huang, T. L.; Wu, T. W.; Cho, H. H.; Liang, H. C.; Chen, Y. F.

    2017-08-01

    A dual-central-wavelength passively mode-locked laser with full modulation in the 0.31 THz optical beating is achieved by using a diffusion-bonded Nd:YVO4/Nd:GdVO4 crystal and a semiconductor saturable absorber mirror. The output power of the dual-band emission is well balanced by tuning the focal position of the pump waist. At a pump power of 13 W, the total output power is up to 2.7 W with a repetition rate of 297.9 MHz. The autocorrelation traces clearly reveal the synchronization of the dual-band emission. Moreover, an analytical model is developed to manifest the multi-pulse structure caused by the etalon effect of the gain medium. More important, we experimentally verify that the etalon effect can be completely eliminated by using the wedge-cut diffusion-bonded Nd:YVO4/Nd:GdVO4 crystal.

  13. Semiconductor saturable-absorber mirror assisted Kerr-lens mode-locked Ti:sapphire laser producing pulses in the two-cycle regime.

    Science.gov (United States)

    Sutter, D H; Steinmeyer, G; Gallmann, L; Matuschek, N; Morier-Genoud, F; Keller, U; Scheuer, V; Angelow, G; Tschudi, T

    1999-05-01

    Pulses of sub-6-fs duration have been obtained from a Kerr-lens mode-locked Ti:sapphire laser at a repetition rate of 100 MHz and an average power of 300 mW. Fitting an ideal sech(2) to the autocorrelation data yields a 4.8-fs pulse duration, whereas reconstruction of the pulse amplitude profile gives 5.8 fs. The pulse spectrum covers wavelengths from above 950 nm to below 630 nm, extending into the yellow beyond the gain bandwidth of Ti:sapphire. This improvement in bandwidth has been made possible by three key ingredients: carefully designed spectral shaping of the output coupling, better suppression of the dispersion oscillation of the double-chirped mirrors, and a novel broadband semiconductor saturable-absorber mirror.

  14. Ultra-short pulse generation in a linear femtosecond fiber laser using a Faraday rotator mirror and semiconductor saturable absorber mirror

    Science.gov (United States)

    Hekmat, M. J.; Gholami, A.; Omoomi, M.; Abdollahi, M.; Bagheri, A.; Normohammadi, H.; Kanani, M.; Ebrahimi, A.

    2018-02-01

    An innovative method for obtaining ultra-short and perfectly stable femtosecond pulses in a linear erbium-doped fiber laser is proposed. A commercial semiconductor saturable absorber mirror and a standard Faraday rotator are used in both sides of the linear fiber optic laser configuration to shorten the pulse duration and suppress undesirable effects on the polarization state. The laser operation is investigated theoretically using a physical model and it is verified using experimental results. The main idea of this research is to apply a Faraday rotator mirror for pulse shortening purposes. For this reason, two types of Er-doped fiber optics with different group velocity dispersion parameters are used to achieve the optimum net group velocity dispersion in the cavity. Output results demonstrate good consistency between theory and experimental results. The output power of the linear oscillator is approximately 45 mW with 135 fs pulses at the 23.5 MHz repetition rate without any pulse compression.

  15. Effect of thermal management on the properties of saturable absorber mirrors in high-power mode-locked semiconductor disk lasers

    Energy Technology Data Exchange (ETDEWEB)

    Rantamaeki, Antti; Lyytikaeinen, Jari; Jari Nikkinen; Okhotnikov, Oleg G [Optoelectronics Research Center, Tampere University of Technology (Finland)

    2011-09-30

    The thermal management of saturable absorbers is shown to have a critical impact on a high-power mode-locked disk laser. The absorber with efficient heat removal makes it possible to generate ultrashort pulses with high repetition rates and high power density.

  16. Single-walled carbon nanotubes oust graphene and semiconductor saturable absorbers in Q-switched solid-state lasers at 2 µm

    Science.gov (United States)

    Mateos, Xavier; Loiko, Pavel; Choi, Sun Young; Rotermund, Fabian; Aguiló, Magdalena; Díaz, Francesc; Griebner, Uwe; Petrov, Valentin

    2017-09-01

    The superior performance of a saturable absorber (SA) based on randomly-oriented single-walled carbon nanotubes (SWCNTs) operating in the spectral region of their first fundamental transition E 11 over a graphene-SA containing several (n  =  3) carbon layers and a commercial semiconductor SA (SESA) for passive Q-switching of bulk thulium solid-state lasers is demonstrated. Using SWCNT-SA in a compact diode-pumped Tm:KLuW laser, a maximum average output power of 1.36 W is achieved at 1932-1944 nm corresponding to a slope efficiency of 41% and pulse characteristics of 48 ns/5.5 µJ which are superior to that for graphene-SA (123 ns/3.1 µJ) and SESA (61 ns/1.1 µJ). SWCNT-SAs are promising for eye-safe miniature lasers at ~2 µm generating nanosecond pulses in the MHz repetition frequency range.

  17. 980-nm all-fiber mode-locked Yb-doped phosphate fiber oscillator based on semiconductor saturable absorber mirror and its amplifier

    Science.gov (United States)

    Li, Ping-Xue; Yao, Yi-Fei; Chi, Jun-Jie; Hu, Hao-Wei; Zhang, Guang-Ju; Liang, Bo-Xing; Zhang, Meng-Meng; Ma, Chun-Mei; Su, Ning

    2016-08-01

    A 980-nm semiconductor saturable absorber mirror (SESAM) mode-locked Yb-doped phosphate fiber laser is demonstrated by using an all-fiber linear cavity configuration. Two different kinds of cavity lengths are introduced into the oscillator to obtain a robust and stable mode-locked seed source. When the cavity length is chosen to be 6 m, the oscillator generates an average output power of 3.5 mW and a pulse width of 76.27 ps with a repetition rate of 17.08 MHz. As the cavity length is optimized to short, 4.4-mW maximum output power and 61.15-ps pulse width are produced at a repetition rate of 20.96 MHz. The output spectrum is centered at 980 nm with a narrow spectral bandwidth of 0.13 nm. In the experiment, no undesired amplified spontaneous emission (ASE) nor harmful oscillation around 1030 nm is observed. Moreover, through a two-stage all-fiber-integrated amplifier, an output power of 740 mW is generated with a pulse width of 200 ps. Project supported by the National Natural Science Foundation of China (Grant No. 61205047).

  18. Diode-pumped passively mode-locked 1.3-{mu}m Nd:YVO{sub 4} and Nd:YLF lasers by use of semiconductor saturable absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Fluck, R.; Zhang, G.; Keller, U. [Ultrafast Laser Physics, Institute of Quantum Electronics, Swiss Federal Institute of Technology, ETH Hoenggerberg-HPT, CH-8093 Zuerich (Switzerland); Weingarten, K.J. [Time-Bandwidth Products, ETH Hoenggerberg-HPT, CH-8093 Zuerich (Switzerland); Moser, M. [Paul Scherrer Institute, CH-8048 Zuerich (Switzerland)

    1996-09-01

    We report on self-starting passively mode-locked diode-pumped 1.3-{mu}m lasers obtained by use of semiconductor saturable absorbers. We achieved pulses as short as 4.6 ps in Nd:YVO{sub 4} and 5.7 ps in Nd:YLF with average output powers of 50 and 130 mW, respectively. {copyright} {ital 1996 Optical Society of America.}

  19. Comparative studies for Cr4+:YAG crystal and AlGaInAs semiconductor used as a saturable absorber in Q-switched Yb-doped fiber lasers.

    Science.gov (United States)

    Huang, J Y; Zhuang, W Z; Huang, W C; Su, K W; Hu, C; Huang, K F; Chen, Y F

    2009-11-09

    We demonstrate comparative studies for Cr(4+):YAG crystal and AlGaInAs quantum-well (QW) used as a saturable absorbers in passively Q-switched Yb-doped fiber lasers. Both saturable absorbers were designed to be possessed of nearly the same initial transmission. Under a pump power of 24 W, the average output powers were up to 14.4 W and 13.8 W obtained with the AlGaInAs QWs and with the Cr(4+):YAG crystal, respectively. The maximum pulse energies obtained with the Cr(4+):YAG crystal and with the AlGaInAs QWs were found to be 0.35 mJ and 0.45 mJ, respectively.

  20. Semiconductor quantum-well saturable absorbers for efficient passive Q switching of a diode-pumped 946 nm Nd:YAG laser.

    Science.gov (United States)

    Huang, Y P; Liang, H C; Huang, J Y; Su, K W; Li, A; Chen, Y F; Huang, K F

    2007-09-01

    InGaAs quantum wells and a Bragg mirror structure are grown on a GaAs substrate to simultaneously serve as a low-loss saturable absorber and an output coupler for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 946 nm. With an incident pump power of 9.2 W, the laser produces pulses of 38 ns duration with average pulse energy of as much as 20 microJ at a pulse repetition rate of 55 kHz.

  1. Intraband carrier kinetics and picosecond pulse shaping in field-enhanced bulk semiconductor absorbers.

    Science.gov (United States)

    Uskov, A V; McInerney, J; Karin, J R; Bowers, J E

    1998-03-01

    Picosecond pulse propagation through a field-enhanced waveguide bulk semiconductor saturable absorber is studied numerically. Fast switching from unsaturated absorption to delayed strong saturation and gain, as well as the predicted dependence of saturation energy on electric field, is based on intraband carrier kinetics and electric-field dynamics in the absorber and can lead to improved, controllable pulse shaping.

  2. Ultrafast THz Saturable Absorption in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, Matthias C.

    2011-01-01

    We demonstrate THz saturable absorption in n-doped semiconductors GaAs, GaP, and Ge in a nonlinear THz time-domain spectroscopy experiment. Saturable absorption is caused by sample conductivity modulation due to electron heating and satellite valley scattering in the field of a strong THz pulse....

  3. Nonlinearly limited saturable-absorber mode locking of an erbium fiber laser.

    Science.gov (United States)

    Jiang, M; Sucha, G; Fermann, M E; Jimenez, J; Harter, D; Dagenais, M; Fox, S; Hu, Y

    1999-08-01

    We describe an erbium fiber laser that is passively mode locked by a novel, precision antireflection-coated semiconductor saturable-absorber mirror that incorporates an additional two-photon absorber. It is shown that passive mode locking evolves from a Q-switching instability. The results are achieved by use of saturable absorbers that provide a large (15%) nonlinear (saturable) loss. Exploiting two-photon absorption can substantially reduce the peak power of the Q-switched pulses, which results in improved reliability of the laser. Moreover, two-photon absorption can be used to produce an optimal stability range for saturable-absorber mode locking.

  4. Reflectivity kinetics of saturable absorbers for laser mirrors

    Science.gov (United States)

    Rubtsova, N. N.; Borisov, G. M.; Gol'dort, V. G.; Kovalyov, A. A.; Ledovskikh, D. V.

    2016-02-01

    The reflectivity kinetics of saturable absorbers based on semiconductor quantum wells was investigated with differential reflectivity Δ \\text{R}/\\text{R}={{10}-5} accuracy by the pump-probe technique for energy fluxes (0.27-5.40)\\centerdot {{10}14} photons cm-2 using a femtosecond Yb3+ :KY(WO4)2 laser. Three kinds of saturable absorbers were investigated: absorbers based on multiple quantum wells with nano-structured barriers grown over a mirror; the same absorber grown over the substrate; absorbers on multiple quantum wells separated by thick barriers grown over the substrate. The substrate contribution gives a stationary background and a two-photon absorption peak for small probe delays, which complicates the kinetics of the samples grown over the substrate. For absorbers grown over the mirror two exponential decays with a short relaxation time {τ1}=0.2 -0.4 ps and with a long relaxation time {τ2}=7.8 ps were obtained. The last relaxation time is remarkably shorter than in quantum wells with thick barriers.

  5. 2D Saturable Absorbers for Fibre Lasers

    Directory of Open Access Journals (Sweden)

    Robert I. Woodward

    2015-11-01

    Full Text Available Two-dimensional (2D nanomaterials are an emergent and promising platform for future photonic and optoelectronic applications. Here, we review recent progress demonstrating the application of 2D nanomaterials as versatile, wideband saturable absorbers for Q-switching and mode-locking fibre lasers. We focus specifically on the family of few-layer transition metal dichalcogenides, including MoS2, MoSe2 and WS2.

  6. Spatiotemporal extreme events in a laser with a saturable absorber

    Science.gov (United States)

    Rimoldi, Cristina; Barland, Stéphane; Prati, Franco; Tissoni, Giovanna

    2017-02-01

    We study extreme events occurring in the transverse (x ,y ) section of the field emitted by a broad-area semiconductor laser with a saturable absorber. The spatiotemporal events on which we perform the statistical analysis are identified as maxima of the field intensity in the three-dimensional space (x ,y ,t ) . We identify regions in the parameter space where extreme events are more likely to occur and we study the connection of those extreme events with the cavity solitons that are known to exist in the same system, both stationary and self-pulsing.

  7. Twin laser cavity solitons in a VCSEL with saturable absorber

    Science.gov (United States)

    Eslami, Mansour; Kheradmand, Reza; Bahari, Parvin; Tajalli, Habib

    2015-09-01

    We show numerically the existence and stability of double-peak (twin) laser cavity solitons in a model of a semiconductor laser containing a saturable absorber. The onset of twin laser cavity solitons is observed in a narrow range of switching pulse energies above the maximum energy required to switch a normal single laser cavity soliton. Also, the FWHM value of the population dip at the end of injection is found to be wider which later breaks into two closely spaced dips. Three regimes of oscillating, oscillating-rotating and oscillating-rotating-travelling twin laser cavity solitons are reported depending on the value of a bifurcation parameter given by the ratio of the lifetimes of carriers in amplifier and absorber materials. The associated dynamical behaviors in these three regimes are also discussed.

  8. PLD-grown thin film saturable absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Tellkamp, Friedjof

    2012-11-01

    The subject of this thesis is the preparation and characterization of thin films made of oxidic dielectrics which may find their application as saturable absorber in passively Q-switched lasers. The solely process applied for fabrication of the thin films was the pulsed laser deposition (PLD) which stands out against other processes by its flexibility considering the composition of the systems to be investigated. Within the scope of this thesis the applied saturable absorbers can be divided into two fundamentally different kinds of functional principles: On the one hand, saturable absorption can be achieved by ions embedded in a host medium. Most commonly applied bulk crystals are certain garnets like YAG (Y{sub 3}Al{sub 5}O{sub 12}) or the spinel forsterite (Mg{sub 2}SiO{sub 4}), in each case with chromium as dopant. Either of these media was investigated in terms of their behavior as PLD-grown saturable absorber. Moreover, experiments with Mg{sub 2}GeO{sub 4}, Ca{sub 2}GeO{sub 4}, Sc{sub 2}O{sub 3}, and further garnets like YSAG or GSGG took place. The absorption coefficients of the grown films of Cr{sup 4+}:YAG were determined by spectroscopic investigations to be one to two orders of magnitude higher compared to commercially available saturable absorbers. For the first time, passive Q-switching of a Nd:YAG laser at 1064 nm with Cr{sup 4+}:YAG thin films could be realized as well as with Cr:Sc{sub 2}O{sub 3} thin films. On the other hand, the desirable effect of saturable absorption can also be generated by quantum well structures. For this purpose, several layer system like YAG/LuAG, Cu{sub 2}O/MgO, and ZnO/corumdum were investigated. It turned out that layer systems with indium oxide (In{sub 2}O{sub 3}) did not only grew in an excellent way but also showed up a behavior regarding their photo luminescence which cannot be explained by classical considerations. The observed luminescence at roughly 3 eV (410 nm) was assumed to be of excitonic nature and its

  9. Semiconductor nanowire optical antenna solar absorbers.

    Science.gov (United States)

    Cao, Linyou; Fan, Pengyu; Vasudev, Alok P; White, Justin S; Yu, Zongfu; Cai, Wenshan; Schuller, Jon A; Fan, Shanhui; Brongersma, Mark L

    2010-02-10

    Photovoltaic (PV) cells can serve as a virtually unlimited clean source of energy by converting sunlight into electrical power. Their importance is reflected in the tireless efforts that have been devoted to improving the electrical and structural properties of PV materials. More recently, photon management (PM) has emerged as a powerful additional means to boost energy conversion efficiencies. Here, we demonstrate an entirely new PM strategy that capitalizes on strong broad band optical antenna effects in one-dimensional semiconductor nanostructures to dramatically enhance absorption of sunlight. We show that the absorption of sunlight in Si nanowires (Si NWs) can be significantly enhanced over the bulk. The NW's optical properties also naturally give rise to an improved angular response. We propose that by patterning the silicon layer in a thin film PV cell into an array of NWs, one can boost the absorption for solar radiation by 25% while utilizing less than half of the semiconductor material (250% increase in the light absorption per unit volume of material). These results significantly advance our understanding of the way sunlight is absorbed by one-dimensional semiconductor nanostructures and provide a clear, intuitive guidance for the design of efficient NW solar cells. The presented approach is universal to any semiconductor and a wide range of nanostructures; as such, it provides a new PV platform technology.

  10. Terahertz saturable absorbers from liquid phase exfoliation of graphite.

    Science.gov (United States)

    Bianchi, Vezio; Carey, Tian; Viti, Leonardo; Li, Lianhe; Linfield, Edmund H; Davies, A Giles; Tredicucci, Alessandro; Yoon, Duhee; Karagiannidis, Panagiotis G; Lombardi, Lucia; Tomarchio, Flavia; Ferrari, Andrea C; Torrisi, Felice; Vitiello, Miriam S

    2017-06-15

    Saturable absorbers (SA) operating at terahertz (THz) frequencies can open new frontiers in the development of passively mode-locked THz micro-sources. Here we report the fabrication of THz SAs by transfer coating and inkjet printing single and few-layer graphene films prepared by liquid phase exfoliation of graphite. Open-aperture z-scan measurements with a 3.5 THz quantum cascade laser show a transparency modulation ∼80%, almost one order of magnitude larger than that reported to date at THz frequencies. Fourier-transform infrared spectroscopy provides evidence of intraband-controlled absorption bleaching. These results pave the way to the integration of graphene-based SA with electrically pumped THz semiconductor micro-sources, with prospects for applications where excitation of specific transitions on short time scales is essential, such as time-of-flight tomography, coherent manipulation of quantum systems, time-resolved spectroscopy of gases, complex molecules and cold samples and ultra-high speed communications, providing unprecedented compactness and resolution.

  11. Terahertz saturable absorbers from liquid phase exfoliation of graphite

    Science.gov (United States)

    Bianchi, Vezio; Carey, Tian; Viti, Leonardo; Li, Lianhe; Linfield, Edmund H.; Davies, A. Giles; Tredicucci, Alessandro; Yoon, Duhee; Karagiannidis, Panagiotis G.; Lombardi, Lucia; Tomarchio, Flavia; Ferrari, Andrea C.; Torrisi, Felice; Vitiello, Miriam S.

    2017-06-01

    Saturable absorbers (SA) operating at terahertz (THz) frequencies can open new frontiers in the development of passively mode-locked THz micro-sources. Here we report the fabrication of THz SAs by transfer coating and inkjet printing single and few-layer graphene films prepared by liquid phase exfoliation of graphite. Open-aperture z-scan measurements with a 3.5 THz quantum cascade laser show a transparency modulation ~80%, almost one order of magnitude larger than that reported to date at THz frequencies. Fourier-transform infrared spectroscopy provides evidence of intraband-controlled absorption bleaching. These results pave the way to the integration of graphene-based SA with electrically pumped THz semiconductor micro-sources, with prospects for applications where excitation of specific transitions on short time scales is essential, such as time-of-flight tomography, coherent manipulation of quantum systems, time-resolved spectroscopy of gases, complex molecules and cold samples and ultra-high speed communications, providing unprecedented compactness and resolution.

  12. Fabrication of PDMS/SWCNT thin films as saturable absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Romano, I; Sanchez-Mondragon, J J [Photonics and Optical Physics Laboratory, Optics Department, INAOE Apdo. Postal 51 and 216, Tonantzintla, Puebla 72000 (Mexico); Davila-Rodriguez, J; Delfyett, P J [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, FL 32816-2700 (United States); May-Arrioja, D A, E-mail: hromano@inaoep.mx [Depto. de Ingenieria Electronica, UAM Reynosa Rodhe, Universidad Autonoma de Tamaulipas, Carr. Reynosa-San Fernando S/N, Reynosa, Tamaulipas 88779 (Mexico)

    2011-01-01

    We present a novel technique to fabricate a saturable absorber thin film based on Polydimethylsiloxane doped with Single Wall Carbon Nanotubes. Using this film a passive mode-locked fiber laser in a standard ring cavity configuration was built by inserting the film between two angled connectors. Self-starting passively mode-locked laser operation was easily observed. The generated pulses have a width of 1.26 ps at a repetition rate of 22.7 MHz with an average power of 4.89 mW.

  13. Terahertz saturable absorbers from liquid phase exfoliation of graphite

    OpenAIRE

    Bianchi, Vezio; Carey, Tian; Viti, Leonardo; Li, Lianhe; Linfield, Edmund H.; Davies, A. Giles; Tredicucci, Alessandro; Yoon, Duhee; Karagiannidis, Panagiotis; Lombardi, Lucia; Tomarchio, Flavia; Ferrari, Andrea C.; Torrisi, Felice; Vitiello, Miriam S.

    2017-01-01

    Saturable absorbers (SA) operating at terahertz (THz) frequencies can open new frontiers in the development of passively mode-locked THz micro-sources. Here we report the fabrication of THz SAs by transfer coating and inkjet printing single and few-layer graphene films prepared by liquid phase exfoliation of graphite. Open-aperture z-scan measurements with a 3.5 THz quantum cascade laser show a transparency modulation ∼80%, almost one order of magnitude larger than that reported to date at TH...

  14. Gain dynamics and saturation in semiconductor quantum dot amplifiers

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Mørk, Jesper; Hvam, Jørn Märcher

    2004-01-01

    Quantum dot (QD)-based semiconductor optical amplifiers offer unique properties compared with conventional devices based on bulk or quantum well material. Due to the bandfilling properties of QDs and the existence of a nearby reservoir of carriers in the form of a wetting layer, QD semiconductor...... optical amplifiers may be operated in regimes of high linearity, i.e. with a high saturation power, but can also show strong and fast nonlinearities by breaking the equilibrium between discrete dot states and the continuum of wetting layer states. In this paper, we analyse the interplay of these two...

  15. Mode-locking of solid-state lasers by single-walled carbon-nanotube based saturable absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Rotermund, F; Cho, W B; Choi, S Y; Baek, I H; Yim, J H; Lee, S; Schmidt, A; Steinmeyer, G; Griebner, U; Yeom, D I; Kim, K; Petrov, V

    2012-08-31

    Universal use of single-walled carbon-nanotube based saturable absorber devices for mode-locking of bulk solid-state lasers between 0.8 and 2 {mu}m is discussed. The advantages in comparison to semiconductor saturable absorbers are emphasised. We briefly describe the manufacturing process and the essential optical properties, and review experimental results obtained with various types of femtosecond and picosecond solid-state lasers in the steady-state regime. We also demonstrate that a single hybrid saturable absorber used in transmission can be used to mode-lock four different types of lasers operating between 1 and 2 {mu}m. (control of laser radiation parameters)

  16. Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers

    DEFF Research Database (Denmark)

    Thompson, M.G.; Marinelli, C.; Chu, Y.

    Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance.......Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance....

  17. Non-Hermitian engineering of synthetic saturable absorbers

    CERN Document Server

    Teimourpour, M H; Srinivasan, K; El-Ganainy, R

    2016-01-01

    We introduce a new type of synthetic saturable absorbers based on quantum inspired photonic arrays whose linear light transport characteristics can be derived via bosonic algebra. We demonstrate that the interplay between optical Kerr nonlinearity, interference effects and non-Hermiticity through radiation loss leads to a nonlinear optical filtering response with two distinct regimes of small and large optical transmissions. More interestingly, we show that the boundary between these two regimes can be very sharp. The threshold optical intensity that marks this abrupt "phase transition" and its steepness can be engineered by varying the number of the guiding elements. The practical feasibility of these structures as well as their potential applications in laser systems and optical signal processing are also discussed.

  18. Phosphorene quantum dot saturable absorbers for ultrafast fiber lasers

    Science.gov (United States)

    Du, J.; Zhang, M.; Guo, Z.; Chen, J.; Zhu, X.; Hu, G.; Peng, P.; Zheng, Z.; Zhang, H.

    2017-02-01

    We fabricate ultrasmall phosphorene quantum dots (PQDs) with an average size of 2.6 ± 0.9 nm using a liquid exfoliation method involving ultrasound probe sonication followed by bath sonication. By coupling the as-prepared PQDs with microfiber evanescent light field, the PQD-based saturable absorber (SA) device exhibits ultrafast nonlinear saturable absorption property, with an optical modulation depth of 8.1% at the telecommunication band. With the integration of the all-fiber PQD-based SA, a continuous-wave passively mode-locked erbium-doped (Er-doped) laser cavity delivers stable, self-starting pulses with a pulse duration of 0.88 ps and at the cavity repetition rate of 5.47 MHz. Our results contribute to the growing body of work studying the nonlinear optical properties of ultrasmall PQDs that present new opportunities of this two-dimensional (2D) nanomaterial for future ultrafast photonic technologies.

  19. Sub-100 fs single-walled carbon nanotube saturable absorber mode-locked Yb-laser operation near 1 microm.

    Science.gov (United States)

    Schmidt, Andreas; Rivier, Simon; Cho, Won Bae; Yim, Jong Hyuk; Choi, Sun Young; Lee, Soonil; Rotermund, Fabian; Rytz, Daniel; Steinmeyer, Günter; Petrov, Valentin; Griebner, Uwe

    2009-10-26

    Transmission- and reflection-type single-walled carbon nanotube saturable absorbers (SWCNT-SAs) were designed and fabricated for passive mode-locking of bulk lasers in the 1 microm spectral range. Mode-locked laser operation based on a diffusion-bonded Yb:KYW/KYW crystal was demonstrated, and pulses as short as 83 fs and 140 fs were achieved applying reflection-type and transmission-type SWCNT-SA, respectively. The nonlinear parameters of the absorbers were measured to be in close vicinity to those of a semiconductor saturable absorber mirror for the same wavelength range. Mode-locking performance with SWCNT-SAs and the SESAM was compared utilizing the same cavity, with the SESAM resulting in only slightly shorter pulses of 66 fs duration. The nearly identical performance indicates that well-optimized SWCNT-SAs can substitute SESAMs even in the 1 microm region.

  20. Quantum well saturable absorber mirror with electrical control of modulation depth

    DEFF Research Database (Denmark)

    Liu, Xiaomin; Rafailov, Edik U.; Livshits, Daniil

    2010-01-01

    We demonstrate a quantum well QW semiconductor saturable absorber mirror SESAM comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0–2 V to the p-i-n structure, we were able to change the SESAM modulation depth...... in the range 2.5–0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6–26.7 J /cm2. This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect...

  1. Nanographene-Based Saturable Absorbers for Ultrafast Fiber Lasers

    Directory of Open Access Journals (Sweden)

    Hsin-Hui Kuo

    2014-01-01

    Full Text Available The generation of femtosecond pulse laser in the erbium-doped fiber laser system is presented by integrating of the nanographene-based saturable absorbers (SAs. A simplified method of dispersed nanographene-based SAs side-polished fiber device with controllable polished length and depth was also developed. The dependence of geometry of a graphene-deposited side-polished fiber device on optical nonlinear characteristics and on the performance of the MLFL was screened. We found that the 10 mm polished length with 1.68 dB insertion loss had the highest modulation depth (MD of 1.2%. A stable MLFL with graphene-based SAs employing the optimized side-polished fiber device showed a pulse width, a 3 dB bandwidth, a time-bandwidth product (TBP, a repetition rate, and pulse energy of 523 fs, 5.4 nm, 0.347, 16.7 MHz, and 0.18 nJ, respectively, at fundamental soliton-like operation. The femtosecond pulse laser is achieved by evanescent field coupling through graphene-deposited side-polished fiber devices in the laser cavity. This study demonstrates that the polished depth is the key fabrication geometric parameter affecting the overall optical performance and better results exist within the certain polished range.

  2. CsPbBr{sub 3} nanocrystal saturable absorber for mode-locking ytterbium fiber laser

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Yan; Li, Yue; Xu, Jianqiu; Tang, Yulong, E-mail: yulong@sjtu.edu.cn [Key Laboratory for Laser Plasmas (MOE), Department of Physics and Astronomy, Collaborative Innovation Center of IFSA, Shanghai Jiao Tong University, Shanghai 200240 (China); Hu, Zhiping; Tang, Xiaosheng [Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044 (China)

    2016-06-27

    Cesium lead halide perovskite nanocrystals (CsPbX{sub 3}, X = Cl, Br, I) have been reported as efficient light-harvesting and light-emitting semiconductor materials, but their nonlinear optical properties have been seldom touched upon. In this paper, we prepare layered CsPbBr{sub 3} nanocrystal films and characterize their physical properties. Broadband linear absorption from ∼0.8 to over 2.2 μm and nonlinear optical absorption at the 1-μm wavelength region are measured. The CsPbBr{sub 3} saturable absorber (SA), manufactured by drop-casting of colloidal CsPbBr{sub 3} liquid solution on a gold mirror, shows modulation depth and saturation intensity of 13.1% and 10.7 MW/cm{sup 2}, respectively. With this SA, mode-locking operation of a polarization-maintained ytterbium fiber laser produces single pulses with duration of ∼216 ps, maximum average output power of 10.5 mW, and the laser spectrum is centered at ∼1076 nm. This work shows that CsPbBr{sub 3} films can be efficient SA candidates for fiber lasers and also have great potential to become broadband linear and nonlinear optical materials for photonics and optoelectronics.

  3. CsPbBr3 nanocrystal saturable absorber for mode-locking ytterbium fiber laser

    Science.gov (United States)

    Zhou, Yan; Hu, Zhiping; Li, Yue; Xu, Jianqiu; Tang, Xiaosheng; Tang, Yulong

    2016-06-01

    Cesium lead halide perovskite nanocrystals (CsPbX3, X = Cl, Br, I) have been reported as efficient light-harvesting and light-emitting semiconductor materials, but their nonlinear optical properties have been seldom touched upon. In this paper, we prepare layered CsPbBr3 nanocrystal films and characterize their physical properties. Broadband linear absorption from ˜0.8 to over 2.2 μm and nonlinear optical absorption at the 1-μm wavelength region are measured. The CsPbBr3 saturable absorber (SA), manufactured by drop-casting of colloidal CsPbBr3 liquid solution on a gold mirror, shows modulation depth and saturation intensity of 13.1% and 10.7 MW/cm2, respectively. With this SA, mode-locking operation of a polarization-maintained ytterbium fiber laser produces single pulses with duration of ˜216 ps, maximum average output power of 10.5 mW, and the laser spectrum is centered at ˜1076 nm. This work shows that CsPbBr3 films can be efficient SA candidates for fiber lasers and also have great potential to become broadband linear and nonlinear optical materials for photonics and optoelectronics.

  4. III-V semiconductor resonators: A new strategy for broadband light perfect absorbers

    Science.gov (United States)

    Liu, Xiaoshan; Chen, Jian; Liu, Jiasong; Huang, Zhenping; Yu, Meidong; Pan, Pingping; Liu, Zhengqi

    2017-11-01

    Broadband light perfect absorbers (BPAs) are desirable for applications in numerous optoelectronics devices. In this work, a semiconductor-based broadband light perfect absorber (S-BPA) has been numerically demonstrated by utilizing plasmonlike resonances of high-index semiconductor resonators. A maximal absorption of 99.7% is observed in the near-infrared region. By taking the absorption above 80% into account, the spectral bandwidth reaches 340 nm. The absorption properties mainly originate from the optical cavity modes induced by the cylinder resonators and ultrathin semiconductor film. These optical properties and simple structural features can maintain the absorber platform with wide applications in semiconductor optoelectronics.

  5. InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-microm lasers.

    Science.gov (United States)

    Lai, H C; Li, A; Su, K W; Ku, M L; Chen, Y F; Huang, K F

    2005-03-01

    A low-loss semiconductor saturable absorber based on InAs/GaAs quantum dots was developed for Q switching of a diode-pumped Nd-doped laser operating at 1.3 microm. With an InAs/GaAs quantum-dot saturable absorber, a diode-pumped Nd:YVO4 laser at 1342 nm was achieved. With an incident pump power of 2.2 W, an average output power of 360 mW with a Q-switched pulse width of 90 ns at a pulse repetition rate of 770 kHz was obtained.

  6. The cascaded amplifier and saturable absorber (CASA) all-optical switch

    DEFF Research Database (Denmark)

    Hilliger, E.; Berger, J.; Weber, H. G.

    2001-01-01

    The cascaded amplifier and saturable absorber is presented as a new all-optical switching scheme for optical signal processing applications. First demultiplexing experiments demonstrate the principle of operation of this scheme.......The cascaded amplifier and saturable absorber is presented as a new all-optical switching scheme for optical signal processing applications. First demultiplexing experiments demonstrate the principle of operation of this scheme....

  7. WS2 as a saturable absorber for ultrafast photonic applications of mode-locked and Q-switched lasers

    CERN Document Server

    Wu, Kan; Wang, Jun; Li, Xing; Chen, Jianping

    2014-01-01

    Two-dimensional (2D) nanomaterials, especially the transition metal sulfide semiconductors, have drawn great interests due to their potential applications in viable photonic and optoelectronic devices, such as saturable absorbers (SAs) and optical switches, etc. In this work, tungsten disulfide (WS2) based SA for ultrafast photonic applications was demonstrated. WS2 nanosheets were prepared using liquid-phase exfoliation method and embedded in polyvinyl alcohol (PVA) thin film for the practical usage. Saturable absorption was observed in the WS2-PVA SA at the telecommunication waveband near 1550 nm. By incorporating WS2-PVA SA into a fiber laser cavity, both stable mode locking operation and Q-switching operation were achieved. In the mode locking operation, the laser obtained femtosecond output pulse width and high spectral purity in the radio frequency spectrum. In the Q-switching operation, the laser had tunable repetition rate and output pulse energy of a few tens of nano joule. Our findings suggest that ...

  8. Femtosecond KCl:Li and RbCl:Li color-center lasers near 2.8 microm with a HgCdTe multiple-quantum-well saturable absorber.

    Science.gov (United States)

    Cesar, C L; Islam, M N; Soccolich, C E; Feldman, R D; Austin, R F; German, K R

    1990-10-15

    We have used HgCdTe multiple-quantum-well saturable absorbers to passively mode lock KCl:Li and RbCl:Li color-center lasers and have generated pedestal-free pulses as short as 120 fsec near 2.8 microm. To our knowledge, these are the shortest pulses in this wavelength range, and our laser is the only direct source of subpicosecond pulses in the mid-infrared region. Our results generalize the semiconductor passive mode-locking technique to different wavelength ranges, saturable absorber materials, and laser systems and are consistent with a model in which LO phonon collisions determine the fast saturable absorber behavior.

  9. A second order model of noise in saturated semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Öhman, Filip; Tromborg, Bjarne; Mørk, Jesper

    2005-01-01

    We have developed a second order model of spontaneous emission noise in semiconductor optical amplifiers (SOAs). The resulting noise distributions agree well with statistical simulations and explain the measured redistribution of noise in saturated SOAs.......We have developed a second order model of spontaneous emission noise in semiconductor optical amplifiers (SOAs). The resulting noise distributions agree well with statistical simulations and explain the measured redistribution of noise in saturated SOAs....

  10. InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YAG laser at 1123 nm.

    Science.gov (United States)

    Huang, J Y; Liang, H C; Su, K W; Lai, H C; Chen, Y-F; Huang, K F

    2007-01-10

    A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123 nm. With an incident pump power of 16 W, an average output power of 3.1 W with a Q-switched pulse width of 77 ns at a pulse repetition rate of 100 kHz was obtained.

  11. Stable high-power saturable absorber based on polymer-black-phosphorus films

    Science.gov (United States)

    Mao, Dong; Li, Mingkun; Cui, Xiaoqi; Zhang, Wending; Lu, Hua; Song, Kun; Zhao, Jianlin

    2018-01-01

    Black phosphorus (BP), a rising two-dimensional material with a layer-number-dependent direct bandgap of 0.3-1.5 eV, is very interesting for optoelectronics applications from near- to mid-infrared wavebands. In the atmosphere, few-layer BP tends to be oxidized or degenerated during interacting with lasers. Here, we fabricate few-layer BP nanosheets based on a liquid exfoliation method using N-methylpyrrolidone as the dispersion liquid. By incorporating BP nanosheets with polymers (polyvinyl alcohol or high-melting-point polyimide), two flexible filmy BP saturable absorbers are fabricated to realize passive mode locking in erbium-doped fiber lasers. The polymer-BP saturable absorber, especially the polyimide-BP saturable absorber, can prevent the oxidation or water-induced etching under high-power laser illuminations, providing a promising candidate for Q-switchers, mode lockers, and light modulators.

  12. Effects of flake size on mode-locking behavior for flake-graphene saturable absorber mirrors

    CERN Document Server

    Hussain, M I; Booth, L S; Petrasiunas, M J; Brown, C L; Kielpinski, D

    2016-01-01

    After advent of graphene as a saturable absorber many experiments have been conducted to produce short pulse duration pulses. Here, we have measured the properties of flake-graphene saturable absorber mirrors of various flake sizes dependent on fabrication technique. These mirrors enabled us to obtain a large mode-locking bandwidth of 16nm in an erbium-doped fiber laser. Mirrors with large flake size and multi-layered thickness induce strong pulse shaping and reflect mode-locked train of pulses with very large bandwidths.

  13. Quantum well saturable absorber mirror with electrical control of modulation depth

    DEFF Research Database (Denmark)

    Liu, Xiaomin; Rafailov, E.U.; Livshits, D.

    2010-01-01

    A saturable absorber mirror comprizing InGaAs/GaAs quantum wells incorporated into a p-i-n structure is demonstrated. Its modulation depth can be reduced from 4.25 % to 1.63 % by applying reverse bias voltage in the range 0–1 V.......A saturable absorber mirror comprizing InGaAs/GaAs quantum wells incorporated into a p-i-n structure is demonstrated. Its modulation depth can be reduced from 4.25 % to 1.63 % by applying reverse bias voltage in the range 0–1 V....

  14. High-power passively mode-locked Nd:YVO(4) laser using SWCNT saturable absorber fabricated by dip coating method.

    Science.gov (United States)

    Tang, Chun Yin; Chai, Yang; Long, Hui; Tao, Lili; Zeng, Long Hui; Tsang, Yuen Hong; Zhang, Ling; Lin, Xuechun

    2015-02-23

    Passive mode locked laser is typically achieved by the Semiconductor Saturable absorber Mirror, SESAM, saturable absorber, which is produced by expensive and complicated metal organic chemical vapor deposition method. Carbon based single wall carbon nanotube (SWCNT), saturable absorber, is a promising material which is capable to produce stable passive mode-locking in the high power laser cavity over a wide operational wavelength range. This study has successfully demonstrated the high power mode locking laser system operating at 1 micron by using SWCNT based absorbers fabricated by dip coating method. The proposed fabrication method is practical, simple and cost effective for fabricating SWCNT saturable absorber. The demonstrated high power Nd:YVO(4) mode-locked laser operating at 1064nm have maximum output power up to 2.7W,with the 167MHz repetition rate and 3.1 ps pulse duration, respectively. The calculated output pulse energy and peak power are 16.1nJ and 5.2kW, respectively.

  15. Can silicon carbide serve as a saturable absorber for passive mode-locked fiber lasers?

    Science.gov (United States)

    Cheng, Chih-Hsien; Lin, Yung-Hsiang; Chen, Ting-Hui; Chen, Hsiang-Yu; Chi, Yu-Chieh; Lee, Chao-Kuei; Leeb, Chao-Kuei; Wu, Chih-I; Wua, Chih-I; Lin, Gong-Ru

    2015-11-12

    The study presents a novel demonstration of a passively mode-locked erbium-doped fiber laser (EDFL) that is based on a silicon carbide (SixC1-x) saturable absorber. When the C/Si composition ratio is increased to 1.83, the SixC1-x film transforms from two-photon absorption to nonlinear saturable absorption, and the corresponding value reaches -3.9 × 10(-6) cm/W. The Si-rich SixC1-x film cannot mode lock the EDFL because it induced high intracavity loss through two-photon absorption. Even when a stoichiometric SiC is used, the EDFL is mode locked, similar to an EDFL operating under weak nonlinear-polarization-rotation condition. A C-rich SixC1-x film containing sp(2)-orbital C-C bonds with a linear absorbance of 0.172 and nonlinear absorbance of 0.04 at a 181 MW/cm(2) saturation intensity demonstrates nonlinear transmittance. The C-rich SixC1-x saturable absorber successfully generates a short mode-locked EDFL pulse of 470 fs. The fluctuation of the pulse-train envelope dropps considerably from 11.6% to 0.8% when a strong saturable-absorption-induced self-amplitude modulation process occurs in the C-rich SixC1-x film.

  16. Noise and saturation properties of semiconductor quantum dot optical amplifiers

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Mørk, Jesper

    2002-01-01

    We present a detailed theoretical analysis of quantum dot optical amplifiers. Due to the presence of a reservoir of wetting layer states, the saturation and noise properties differ markedly from bulk or QW amplifiers and may be significantly improved.......We present a detailed theoretical analysis of quantum dot optical amplifiers. Due to the presence of a reservoir of wetting layer states, the saturation and noise properties differ markedly from bulk or QW amplifiers and may be significantly improved....

  17. Collective excitability, synchronization, and array-enhanced coherence resonance in a population of lasers with a saturable absorber

    Science.gov (United States)

    Perego, A. M.; Lamperti, M.

    2016-09-01

    In this article we present a numerical study of the collective dynamics in a population of coupled semiconductor lasers with a saturable absorber, operating in the excitable regime under the action of additive noise. We demonstrate that temporal and intensity synchronization takes place in a broad region of the parameter space and for various array sizes. The synchronization is robust and occurs even for a set of nonidentical coupled lasers. The cooperative nature of the system results in a self-organization process which enhances the coherence of the single element of the population too and can have broad impact for detection purposes, for building all-optical simulators of neural networks and in the field of photonics-based computation.

  18. Homoclinic orbits and cycles in the instabilities of a laser with a saturable absorber

    Energy Technology Data Exchange (ETDEWEB)

    Hennequin, D.; de Tomasi, F.; Zambon, B.; Arimondo, E.

    1988-03-15

    The phase-space evolution for the instabilities in a CO/sub 2/ laser with an intracavity saturable absorber is investigated experimentally. The different scenarios corresponding to limit cycles, homoclinic orbits and cycles involving two unstable points, and chaotic behavior are investigated. A theoretical analysis of the experimental results is sketched out.

  19. Q-Switched Operation with Carbon-Based Saturable Absorbers in a Nd:YLF Laser

    Directory of Open Access Journals (Sweden)

    Rosa Weigand

    2015-09-01

    Full Text Available We have numerically studied the influence of the absorption modulation depth of carbon-based saturable absorbers (graphene and carbon nanotubes (CNTs on the Q-switched regime of a diode-pumped Nd:YLF laser. A short-length cavity was used with an end mirror on which CNTs or mono- or bi-layer graphene were deposited, forming a saturable absorber mirror (SAM. Using a standard model, the generated energy per pulse was calculated, as well as the pulse duration and repetition rate. The results show that absorbers with higher modulation depths, i.e., graphene, deliver higher energy pulses at lower repetition rates. However, the pulse duration did not have a monotonic behavior and reaches a minimum for a given low value of the modulation depth typical of CNTs.

  20. Efficient and compact Q-switched green laser using graphene oxide as saturable absorber

    Science.gov (United States)

    Chang, Jianhua; Li, Hanhan; Yang, Zhenbo; Yan, Na

    2018-01-01

    A new type of graphene oxide (GO) is successfully prepared using an improved modified Hummers method. The Raman shift, X-ray diffraction (XRD), and scanning electron microscope (SEM) measurement techniques are used to characterize the GO. An efficient and compact Q-switched green laser based on Nd:YVO4/PPLN is demonstrated with a few-layered GO as the saturable absorber. Our experimental results show that such a few-layered GO saturable absorber allows for the generation of a stable Q-switched laser pulse centered at 532.1 nm with a 3 dB spectral bandwidth of 2.78 nm, a repetition rate of 71.4 kHz, and a pulse duration of 98 ns. The maximum average output power of 536 mW is obtained at the absorbed pump power of 5.16 W, corresponding to an optical conversion efficiency of 10.3%.

  1. WS₂ saturable absorber for dissipative soliton mode locking at 1.06 and 1.55 µm.

    Science.gov (United States)

    Mao, Dong; Zhang, Shengli; Wang, Yadong; Gan, Xuetao; Zhang, Wending; Mei, Ting; Wang, Yonggang; Wang, Yishan; Zeng, Haibo; Zhao, Jianlin

    2015-10-19

    Transition-metal dichalcogenides, such as tungsten disulfide (WS2) and molybdenium disulfide (MoS2), are highly anisotropic layered materials and have attracted growing interest from basic research to practical applications due to their exotic physical property that may complement graphene and other semiconductor materials. WS2 nanosheets are found to exhibit broadband nonlinear saturable absorption property, and saturable absorbers (SAs) are fabricated by depositing WS2 nanosheets on side-polished fibers. Attributing to the weak evanescent field and long interaction length, the WS2 nanosheets are not exposed to large optical intensity, which allows the SA to work at the high-power regime. The SAs are used to mode lock erbium- and ytterbium-doped fiber lasers with normal dispersion, producing trains of dissipative soliton at 1.55 and 1.06 µm respectively. Simulations show that the bandgap of WS2 nanosheets decreases from 1.18 to 0.02 and 0.65 eV by introducing W and S defects respectively, which may contribute to the broadband saturable absorption property of the WS2.

  2. Modeling of gain saturation effects in active semiconductor photonic crystal waveguides

    DEFF Research Database (Denmark)

    Chen, Yaohui; Mørk, Jesper

    2012-01-01

    In this paper, we present a theoretical analysis of slow-light enhanced light amplification in an active semiconductor photonic crystal line defect waveguide. The impact of enhanced light-matter interactions on carrier-depletion-induced modal gain saturation is investigated.......In this paper, we present a theoretical analysis of slow-light enhanced light amplification in an active semiconductor photonic crystal line defect waveguide. The impact of enhanced light-matter interactions on carrier-depletion-induced modal gain saturation is investigated....

  3. Widely power-tunable polarization-independent ultrafast mode-locked fiber laser using bulk InN as saturable absorber.

    Science.gov (United States)

    Jimenez-Rodriguez, M; Monteagudo-Lerma, L; Monroy, E; González-Herráez, M; Naranjo, F B

    2017-03-06

    The growing demand of ultrafast mode-locked fiber lasers in the near infrared has boosted the research activity in this area. One of the most convenient ways to achieve passive mode locking consists of inserting a semiconductor saturable absorber in the laser cavity to modulate the losses. However, in such a configuration, the limited power range of operation is still an unsolved issue. Here we report the fabrication of an ultrafast, high-power, widely power-tunable and non-polarization-dependent mode-locked fiber laser operating at 1.55 µm, using an InN layer as saturable absorber. With post-amplification, this laser delivers 55-fs pulses with a repetition rate of 4.84 MHz and peak power in the range of 1 MW in an all-fiber arrangement.

  4. Simulation of mode lock lasers using microring resonators integrated with InGaAsP saturable absorbers

    Science.gov (United States)

    Amiri, I. S.; Ariannejad, M. M.; Ahmad, H.; Yupapin, P.

    2017-11-01

    Add-drop microring resonators (MRRs) are used in a wide variety of practical applications. To add or drop special wavelength division multiplexing, an optical wavelength selective ring resonator can be used. This paper presents a system of multiple mode lock lasers consisting of an add-drop MRR integrated into a smaller ring with a saturable absorber (SA). In the case of mode-locking, a semiconductor is presented as the SA. This study uses an InGaAsP/InP semiconductor with an InP substrate and a direct bandgap as the MRR. The time-domain traveling wave method is utilized to model the presented photonic circuits. The generated multi-wavelength mode lock lasers have a bandwidth and free spectral range (FSR) of 1.1 and 30.24 nm, corresponding to 0.137 and 3.77 THz, respectively. The drop port output signals have a bandwidth and FSR of 1.5 and 30.24 nm, corresponding to 0.187 and 3.77 THz in the frequency domain. A finesse of 20.16 is obtained, and the Q-factor is 1 × 103. The side bands of the mode lock lasers have an FSR of 0.86 nm.

  5. Mid-infrared mode-locked pulse generation with multilayer black phosphorus as saturable absorber.

    Science.gov (United States)

    Qin, Zhipeng; Xie, Guoqiang; Zhao, Chujun; Wen, Shuangchun; Yuan, Peng; Qian, Liejia

    2016-01-01

    A mid-infrared saturable absorber mirror is successfully fabricated by transferring the mechanically exfoliated black phosphorus onto the gold-coated mirror. With the as-prepared black phosphorus saturable absorber mirror, a continuous-wave passively mode-locked Er:ZBLAN fiber laser is demonstrated at the wavelength of 2.8 μm, which delivers a maximum average output power of 613 mW, a repetition rate of 24 MHz, and a pulse duration of 42 ps. To the best of our knowledge, this is the first time a black phosphorus mode-locked laser at 2.8 μm wavelength has been demonstrated. Our results demonstrate the feasibility of black phosphorus flake as a new two-dimensional material for application in mid-infrared ultrafast photonics.

  6. Dual-wavelength mode-locked fiber laser based on tungsten disulfide saturable absorber

    Science.gov (United States)

    Li, Xiaowen; Qian, Jianqiang; Zhao, Ruwei; Wang, Fan; Wang, Zhenyu

    2017-12-01

    We report on the generation of dual-wavelength mode-locked laser pulse in an Er-doped ring-shaped fiber cavity with WS2 nanosheets based saturable absorber (SA), emitting at wavelength of 1531.8 nm and 1556.7 nm. The WS2 nanosheets were precipitated on the head face of fiber patch cord via light precipitation method. By adjusting the polarization of lasing mode, the gain of the Er-doped fiber laser was effectively controlled and the stable dual-wavelength mode-locking operation was achieved. Our investigation revealed WS2’s extraordinary nonlinear properties, which make it an excellent material for saturable absorber for passively mode-locked fiber lasers.

  7. Laser diode structures with a saturable absorber for high-energy picosecond optical pulse generation by combined gain-and Q-switching

    Science.gov (United States)

    Ryvkin, B. S.; Avrutin, E. A.; Kostamovaara, J. E. K.; Kostamovaara, J. T.

    2017-02-01

    The performance of gain-switched Fabry-Perot asymmetric-waveguide semiconductor lasers with a large equivalent spot size and an intracavity saturable absorber was investigated experimentally and theoretically. The laser with a short (˜20 μm) absorber emitted high-energy afterpulse-free optical pulses in a broad range of injection current pulse amplitudes; optical pulses with a peak power of about 35 W and a duration of about 80 ps at half maximum were achieved with a current pulse with an amplitude of just 8 A and a duration of 1.5 ns. Good quality pulsations were observed in a broad range of elevated temperatures. The introduction of a substantially longer absorber section leads to strong spectral broadening of the output without a significant improvement to pulse energy and peak power.

  8. Passively Q-switched ytterbium-doped ScBO3 laser with black phosphorus saturable absorber

    Science.gov (United States)

    Lu, Dazhi; Pan, Zhongben; Zhang, Rui; Xu, Tianxiang; Yang, Ruilong; Yang, Bingchao; Liu, Zhongyuan; Yu, Haohai; Zhang, Huaijin; Wang, Jiyang

    2016-08-01

    We demonstrate a passively Q-switched Yb3+-doped ScBO3 bulk laser using a black phosphorous (BP) saturable absorber, a two-dimensional semiconductor. The response spectra of BP show that it is suitable as a universal switcher in the spectral range from the visible to midinfrared band. Considering the saturable absorption properties of BP and emission properties of Yb3+-doped crystals, the passively Q-switched bulk laser pulses were realized with the Yb3+:ScBO3 crystal as a gain material and a fabricated BP sample as a Q-switcher. Because of the large energy storage capacity of Yb3+:ScBO3, the maximum output energy is obtained to be 1.4 μJ, which is comparable with the previous reported maximum energy of graphene Q-switched lasers. The obtained results identify the potential capability of BP as a pulse modulator in bulk lasers, and BP plays an increasingly important role in a wide range of its applications, including photonics and optoelectronics.

  9. Bilayer Bismuth Selenide nanoplatelets based saturable absorber for ultra-short pulse generation (Invited)

    Science.gov (United States)

    Xu, Yanhua; Xie, Hanhan; Jiang, Guobao; Miao, Lili; Wang, Ke; Tang, Siying; Yu, Xuefeng; Zhang, Han; Bao, Qiaoliang

    2017-07-01

    Based on an efficient and bottom-up synthesis technique, Bismuth Selenide (Bi2Se3) nanoplatelets with uniform morphology and average thickness down to 3-7 nm had been fabricated. Its nonlinear absorption property under high power excitation had been well characterized by our Z-scan measurement system at different illumination wavelengths, and we found that the as-fabricated bi-layer Bi2Se3 nanoplatelets show unique nonlinear optical responses, that is, with a saturable optical intensity of 32 GW/cm2 (resp. 3.7 MW/cm2) and a modulation depth of 88% (resp. 36%) at 800 nm (resp. 1565 nm). By implementing its saturable absorption property, we designed an optical saturable absorber device based on bilayer Bi2Se3 nanoplatelets through deposited them onto the end-facet of optical fiber. The as-fabricated optical saturable absorber device allows for the generation of mode-locking pulses at 1571 nm with pulse duration of 579 fs and a repetition rate of 12.54 MHz at a pump power of 160 mW. The method on fabricating ultrathin Bi2Se3 nanoplatelets may pave a new way to massive production of large-area topological insulator thin films that can be used in two-dimensional layered materials related photonics device.

  10. Passively mode-locked fiber laser by a cell-type WS2 nanosheets saturable absorber

    Science.gov (United States)

    Yan, Peiguang; Liu, Aijiang; Chen, Yushan; Wang, JinZhang; Ruan, Shuangchen; Chen, Hao; Ding, Jinfei

    2015-01-01

    A cell-type saturable absorber has been demonstrated by filling the single mode photonic crystal fiber (SMPCF) with tungsten disulfide (WS2) nanosheets. The modulation depth, saturable intensity, and non-saturable loss of this SA are measured to be 3.53%, 159 MW/cm2 and 23.2%, respectively. Based on this SA, a passively mode-locked EDF laser has been achieved with pulse duration of 808 fs and repetition rate of 19.57 MHz, and signal-noise-ratio (SNR) of 60.5 dB. Our results demonstrate that the cell-type WS2 nanosheets SA can serve as a good candidate for short-pulse mode locker. PMID:26213180

  11. 1.5-micron fiber laser passively mode-locked by gold nanoparticles saturable absorber

    Science.gov (United States)

    Ahmad, Harith; Tahrin, Rabiatul Addawiyah Azwa; Azman, Nursyafiqa; Kassim, Syara; Ismail, Mohd Afiq; Maah, Mohd Jamil

    2017-11-01

    A 1.5 μm fiber laser which was passively mode-locked by gold nanoparticles saturable absorber (SA) is proposed and demonstrated. The SA was fabricated via dripping the gold nanoparticles solution onto the fiber ferrules and left to dry. The SA has an insertion loss of 12 dB, modulation depth of 1.35% and saturation intensity of ∼ 1 GW /cm2. At sufficiently high pump power, the mode-locked operation started with some applied disturbance to the SA. The resultant mode-locked characteristics includes 6.897 MHz of repetition rate, 4.04 ps of pulsewidth, ∼ 61 dB of signal-to-noise ratio and 1.329 mW of output power.

  12. A practical topological insulator saturable absorber for mode-locked fiber laser

    Science.gov (United States)

    Yan, Peiguang; Lin, Rongyong; Ruan, Shuangchen; Liu, Aijiang; Chen, Hao; Zheng, Yuequn; Chen, Sifan; Guo, Chunyu; Hu, Juguang

    2015-01-01

    A novel saturable absorber (SA) was fabricated by coating the topological insulator (TI) film on microfiber using pulsed laser deposition (PLD) method. The TISA device had an insertion loss of ~1.25 dB, a saturable intensity of 26.7 MW/cm2, a modulation depth of ~5.7%, and a nonsaturable loss of 20.5%. Upon employing this SA device, we established a passively mode-locked EDFL and achieved nearly free-chirped soliton pulse with 286 fs of pulse duration and >73 dB of signal to noise ratio (SNR). This result clearly evidences that the PLD is an effective scheme for practical SA device fabrication. PMID:25732598

  13. Numerical analysis of fast saturable absorber mode-locked Yb(3+) lasers under large modulation depth.

    Science.gov (United States)

    Tokurakawa, Masaki; Shirakawa, Akira

    2015-10-05

    Numerical analysis of fast saturable absorber mode-locked Yb(3+)-doped solid state lasers is reported. The analysis includes a special case in which the spectral bandwidth of the short pulse is larger than the fluorescence bandwidth of the gain material. The relationship between the available shortest pulse duration and modulation depth for a standard bulk and thin disk laser geometries with several gain materials are shown. The characteristic phenomena observed in our previous Kerr-lens mode-locked laser experiments were reproduced in the simulation.

  14. Absorbant saturable ultra-rapide à multipuits quantiques pour le traitement tout-optique du signal

    OpenAIRE

    Gicquel-Guézo, Maud

    2004-01-01

    ROUSSIGNOL Philippe,Directeur de Recherche-LPA (Paris VI,)Rapporteur OUDAR Jean-Louis,Directeur de Recherche-LPN (Marcoussis), RapporteurGOSSELIN Stéphane,Ingénieur-FT R&D (Lannion),ExaminateurVODJDANI Nakita,Ingénieur-Thalès R&T (Orsay),ExaminatricePENTY Richard,Professor-Photonic Research (Cambridge),ExaminateurLOUALICHE Slimane,Professeur-LENS (INSA Rennes),Directeur de thèseSHEN Alexandre,Ingénieur-Alcatel (Marcoussis),Invité; This thesis deals with the study of saturable absorbers based ...

  15. Investigations of models and experimental studies of a stationary regime for a laser with a saturable absorber

    Energy Technology Data Exchange (ETDEWEB)

    Zambon, B.; De Tomasi, F.; Hennequin, D.; Arimondo, E. (Dipartimento di Fisica, Universita delgi Studi di Pisa, piazza Torricelli 2, 56100 Pisa, Italy (IT))

    1989-10-01

    The laser with saturable absorber (LSA) with level structures in amplifier and absorber media has been modeled in a rate-equation approach introducing memory functions. This approach has been applied to vibrational structures in a CO{sub 2} medium and rotovibrational structures in molecular absorbers. Experimental results for the LSA regimes with inhomogeneously and homogeneously broadened absorbers are presented. The theoretical results for the laser threshold and the Hopf bifurcation are derived by the model through a fitting of the laser-absorber coupling parameters.

  16. Passivation of black phosphorus saturable absorbers for reliable pulse formation of fiber lasers

    Science.gov (United States)

    Na, Dongsoo; Park, Kichul; Park, Ki-Hwan; Song, Yong-Won

    2017-11-01

    Black phosphorus (BP) has attracted increasing attention due to its unique electrical properties. In addition, the outstanding optical nonlinearity of BP has been demonstrated in various ways. Its functionality as a saturable absorber, in particular, has been validated in demonstrations of passive mode-locked lasers. However, normally, the performance of BP is degraded eventually by both thermal and chemical damage in ambient conditions. The passivation of BP is the critical issue to guarantee a stable performance of the optical devices. We quantitatively characterized the mode-locked lasers operated by BP saturable absorbers with diversified passivation materials such as polydimethylsiloxane (PDMS) or Al2O3, considering the atomic structure of the materials, and therefore the hydro-permeability of the passivation layers. Unlike the BP layers without passivation, we demonstrated that the Al2O3-passivated BP layer was protected from the surface oxidation reaction in the long-term, and the PDMS-passivated one had a short-term blocking effect. The quantitative analysis showed that the time-dependent characteristics of the pulsed laser without passivation were changed with respect to the pulse duration, spectral width, and time-bandwidth product displaying 550 fs, 2.8 nm, and 0.406, respectively. With passivation, the changes were limited to <43 fs, <0.3 nm, and <0.012, respectively.

  17. Instabilities and chaos in an infrared laser with saturable absorber: experiments and vibrorotational model

    Energy Technology Data Exchange (ETDEWEB)

    de Tomasi, F.; Hennequin, D.; Zambon, B.; Arimondo, E.

    1989-01-01

    The instabilities and chaos in a CO/sub 2/ laser containing SF/sub 6/ and /sup 15/NH/sub 3/ absorbers have been studied as a function of the laser-control parameters. By making use of a phase-portrait analysis, the instabilities have been classified through their orbits in the phase space around the laser-with-saturable-absorber (LSA) fixed points. A chaotic regime, reached through a sequence of period-doubling bifurcations, has been observed for an instability of limit cycles around one fixed point. The transition between different instability operations presents an intermediate regime, which we have defined as the hesitation regime and have characterized through the fluctuations in the return times. The observed phenomena have been reproduced within a model, including the rotational--vibrational structure of the amplifier and absorber media. The numerical analysis has shown that the LSA time evolution, as described through homoclinic orbits in the LSA phase space, depends on the relative attractions of the saddle point and the saddle focus fixed points.

  18. Wake mode sidebands and instability in mode-locked lasers with slow saturable absorbers.

    Science.gov (United States)

    Wang, Shaokang; Droste, Stefan; Sinclair, Laura C; Coddington, Ian; Newbury, Nathan R; Carruthers, Thomas F; Menyuk, Curtis R

    2017-06-15

    Passively mode-locked lasers with semiconductor saturable absorption mirrors are attractive comb sources due to their simplicity, excellent self-starting properties, and their environmental robustness. These lasers, however, can have an increased noise level and wake mode instabilities. Here, we investigate the wake mode dynamics in detail using a combination of evolutionary and dynamical methods. We describe the mode-locked pulse generation from noise when a stable pulse exists and the evolution of the wake mode instability when no stable pulse exists. We then calculate the dynamical spectrum of the mode-locked pulse, and we show that it has six discrete eigenmodes, two of which correspond to wake modes. The wake modes are unstable when the wake mode eigenvalues have a positive real part. We also show that even when the laser is stable, the wake modes lead to experimentally observed sidebands.

  19. Black phosphorus as a new broadband saturable absorber for infrared passively Q-switched fiber lasers

    CERN Document Server

    Jiang, Tian; Zheng, Xin; Yu, Hao; Cheng, Xiang-Ai

    2015-01-01

    Black phosphorus (BP) with its enticing electric and optical properties is intensely researched in the field of optoelectronics. In this paper, Q-switched pulses at 1550 nm and 2 um wavelengths are obtained by inserting bulk-structured BP based saturable absorber (SA) into an erbium-doped fiber laser (EDFL) and an thulium/holmium-doped fiber laser (THDFL), respectively. The BP-SA was prepared by depositing powered BP material on to the flat side of a side-polished single mode fiber. Q-switched 1550 nm pulses with width tuned from 9.35 to 31 us were obtained for the EDFL. For the THDFL, over 100 nm wavelength range could be achieved from 1832 to 1935 nm by adjusting the pump power. To the best of our knowledge, these results demonstrated the broadband saturable absorption property of BP and for the first time verified that BP as a new two-dimensional material for applications in saturable absorption devices.

  20. Microfiber-based few-layer black phosphorus saturable absorber for ultra-fast fiber laser

    CERN Document Server

    Luo, Zhi-Chao; Guo, Zhi-Nan; Jiang, Xiao-Fang; Luo, Ai-Ping; Zhao, Chu-Jun; Yu, Xue-Feng; Xu, Wen-Cheng; Zhang, Han

    2015-01-01

    Few-layer black phosphorus (BP), as the most alluring graphene analogue owing to its similar structure as graphene and thickness dependent direct band-gap, has now triggered a new wave of research on two-dimensional (2D) materials based photonics and optoelectronics. However, a major obstacle of practical applications for few-layer BPs comes from their instabilities of laser-induced optical damage. Herein, we demonstrate that, few-layer BPs, fabricated through the liquid exfoliation approach, can be developed as a new and practical saturable absorber (SA) by depositing few-layer BPs with microfiber. The saturable absorption property of few-layer BPs had been verified through an open-aperture z-scan measurement at the telecommunication band and the microfiber-based BP device had been found to show a saturable average power of ~4.5 mW and a modulation depth of 10.9%, which is further confirmed through a balanced twin detection measurement. By further integrating this optical SA device into an erbium-doped fiber...

  1. Slow and Fast Light in an Electro-Absorber

    DEFF Research Database (Denmark)

    Öhman, Filip; Bermejo Ramirez, Andres; Sales, Salvador

    2006-01-01

    We demonstrate controllable and large time delay in cascaded semiconductor saturable absorbers and amplifiers. The possibility of further increasing the tuneable phase shift by utilizing field screening effects in the quantum well absorber is demonstrated.......We demonstrate controllable and large time delay in cascaded semiconductor saturable absorbers and amplifiers. The possibility of further increasing the tuneable phase shift by utilizing field screening effects in the quantum well absorber is demonstrated....

  2. Investigation on pulse shaping in fiber laser hybrid mode-locked by Sb(2)Te(3) saturable absorber.

    Science.gov (United States)

    Bogusławski, Jakub; Soboń, Grzegorz; Zybała, Rafał; Mars, Krzysztof; Mikuła, Andrzej; Abramski, Krzysztof M; Sotor, Jarosław

    2015-11-02

    We report a study on a hybrid mode-locked fiber laser with two saturable absorbers: slow and fast, integrated in a single device. Amorphous antimony telluride (Sb(2)Te(3)) layer was deposited on side-polished fiber to form the slow saturable absorber due to the third order nonlinear susceptibility of Sb(2)Te(3). Additionally, an unsymmetrical design of the device causes polarization-dependent losses and together with polarization controller allows to use a nonlinear polarization evolution to form the artificial fast saturable absorber. Sub-200 fs soliton pulses with 0.27 nJ of pulse energy were generated in the hybrid mode-locked Er-doped fiber laser. Differences in the dynamics of mode-locked laser are further investigated with the use of slow and fast saturable absorbers solely, and compared with the hybrid device. Joint operation of two saturable absorbers enhances the laser performance and stability. The conducted experiments allowed to define roles of each mechanism on the pulse shaping in the laser cavity.

  3. High power L-band mode-locked fiber laser based on topological insulator saturable absorber.

    Science.gov (United States)

    Meng, Yichang; Semaan, Georges; Salhi, Mohamed; Niang, Alioune; Guesmi, Khmaies; Luo, Zhi-Chao; Sanchez, Francois

    2015-09-07

    We demonstrate a passive mode-locked Er:Yb doped double-clad fiber laser using a microfiber-based topological insulator (Bi(2)Se(3)) saturable absorber (TISA). By optimizing the cavity loss and output coupling ratio, the mode-locked fiber laser can operate in L-band with high average output power. With the highest pump power of 5 W, 91st harmonic mode locking of soliton bunches with average output power of 308 mW was obtained. This is the first report that the TISA based erbium-doped fiber laser operating above 1.6 μm and is also the highest output power yet reported in TISA based passive mode-locked fiber laser.

  4. Gold nanoparticle based saturable absorber for Q-switching in 1.5 µm laser application

    Science.gov (United States)

    Ahmad, M. T.; Muhammad, A. R.; Zakaria, R.; Rahim, H. R. A.; Hamdan, K. S.; Yusof, H. H. M.; Arof, H.; Harun, S. W.

    2017-11-01

    We demonstrate passive Q-switching in an erbium-doped fiber laser (EDFL) cavity using gold nanoparticles as a saturable absorber (SA) for the first time. By using a thermal deposition method, gold with nanosized particles was plated onto polyvinyl alcohol film to form the SA. The SA was incorporated into a laser cavity, sandwiched between two fiber ferrules. The EDFL generates a Q-switching pulse in the 1560 nm region with a tunable repetition rate from 24.34 kHz to 88.11 kHz. The pulse tuned to a maximum input pump power of 179.5 mW produced a pulse width and pulse energy of 4.25 µs and 32.91 nJ, respectively.

  5. Passively mode-locked soliton femtosecond pulses employing graphene saturable absorber

    Science.gov (United States)

    Lau, K. Y.; Muhammad, F. D.; Latif, A. A.; Abu Bakar, M. H.; Yusoff, Z.; Mahdi, M. A.

    2017-09-01

    We demonstrate a passively mode-locked fiber laser incorporating graphene thin film (GTF) as saturable absorber (SA). The SA is fabricated by sandwiching the GTF between two single mode fiber ferrules through a fiber adaptor. The transmission loss at 1560 nm and non-linear saturation absorption modulation depth for GTF-SA are 0.8 dB and 2.90%, respectively. An erbium-doped fiber laser cavity is constructed to verify the functionality of GTF-SA and is designed to have net anomalous dispersion. It generates large spectral width of 4.99 nm with pulse repetition rate of 9.655 MHz and pulse width of 670 fs. Net anomalous dispersion and time bandwidth product higher than the sech2 transform-limited pulse validate the experimental result. In short, we demonstrate high performance GTF-SA that is able to generate ultrafast pulse duration in femtosecond range effortlessly with simple and green SA fabrication procedures.

  6. Slow light in saturable absorbers: Progress in the resolution of a controversy

    Science.gov (United States)

    Macke, Bruno; Razdobreev, Igor; Ségard, Bernard

    2017-06-01

    There are two opposing models in the analysis of the slow transmission of light pulses through saturable absorbers. The canonical incoherent bleaching model simply explains the slow transmission by combined effects of saturation and of noninstantaneous response of the medium resulting in absorption of the front part of the incident pulse larger than that of its rear. The second model, referred to as the coherent-population-oscillations (CPO) model, considers light beams whose intensity is slightly pulse modulated and attributes the time delay of the transmitted pulse to a reduction of the group velocity. We point out some inconsistencies in the CPO model and show that the two models lie in reality on the same hypotheses, the equations derived in the duly rectified CPO model being local expressions of the integral equations obtained in the incoherent bleaching model. When intense pulses without background are used, the CPO model, based on linearized equations, breaks down. The incoherent bleaching model then predicts that the transmitted light should vanish when the intensity of the incident light is strictly zero. This point is confirmed by the experiments that we have performed on ruby with square-wave incident pulses and we show that the whole shape of the observed pulses agrees with that derived analytically by means of the incoherent bleaching model. We also determine in this model the corresponding evolution of the fluorescence light, which seems to have been evidenced in other experiments.

  7. Thulium-doped all-fiber laser mode-locked by CVD-graphene/PMMA saturable absorber.

    Science.gov (United States)

    Sobon, Grzegorz; Sotor, Jaroslaw; Pasternak, Iwona; Krajewska, Aleksandra; Strupinski, Wlodek; Abramski, Krzysztof M

    2013-05-20

    We report an all-fiber Tm-doped fiber laser mode-locked by graphene saturable absorber. The laser emits 1.2 ps pulses at 1884 nm center wavelength with 4 nm of bandwidth and 20.5 MHz mode spacing. The graphene layers were grown on copper foils by chemical vapor deposition (CVD) and transferred onto the fiber connector end. Up to date this is the shortest reported pulse duration achieved from a Tm-doped laser mode-locked by graphene saturable absorber. Such cost-effective and stable fiber lasers might be considered as sources for mid-infrared spectroscopy and remote sensing.

  8. Low-loss flake-graphene saturable absorber mirror for laser mode-locking at sub-200-fs pulse duration

    CERN Document Server

    Cunning, B V; Kielpinski, D

    2011-01-01

    Saturable absorbers are a key component for mode-locking femtosecond lasers. Polymer films containing graphene flakes have recently been used in transmission as laser mode-lockers, but suffer from high nonsaturable loss, limiting their application in low-gain lasers. Here we present a saturable absorber mirror based on a film of pure graphene flakes. The device is used to mode lock an erbium-doped fiber laser, generating pulses with state-of-the-art, sub-200-fs duration. The laser characteristic indicate that the film exhibits low nonsaturable loss (13% per pass) and large absorption modulation depth (45% of low-power absorption).

  9. Passively Q-switched erbium-doped fiber laser based on Zn nanoparticles as a saturable absorber

    Science.gov (United States)

    Zaca-Morán, P.; Ortega-Mendoza, J. G.; Lozano-Perera, G. J.; Gómez-Pavón, L. C.; Pérez-Sánchez, G. F.; Padilla-Martínez, J. P.; Felipe, C.

    2017-10-01

    In this work, a passively Q-switched erbium-doped ring laser using zinc nanoparticles as a saturable absorber is studied and experimentally demonstrated. To achieve this, a saturable absorber was developed through a selective incorporation of zinc nanoparticles onto the core of an optical fiber using a coherent light source of an infrared laser at 1550 nm, then the saturable absorber was inserted into a laser cavity. The laser has a threshold pump power of 57.7 mW at 980 nm, and a range of pulse-repetition rate from 12.3 to 43 kHz. The highest pulse energy of 2.6 nJ was obtained at a repetition rate of 43 kHz and an output wavelength of 1565.5 nm. In addition, the saturable absorber was morphologically characterized by using both scanning electron and atomic force microscopy showing a uniform distribution of nanoparticles deposited on the optical fiber core. This is, to the best of our knowledge, the first demonstration of a Q-switched fiber laser using Zn nanoparticles as a device of saturable absorption.

  10. Total absorption of visible light in ultra-thin weakly-absorbing semiconductor gratings

    CERN Document Server

    Sturmberg, Björn C P; Choi, Duk-Yong; White, Thomas P; Botten, Lindsay C; Dossou, Kokou B; Poulton, Christopher G; Catchpole, Kylie R; McPhedran, Ross C; de Sterke, C Martijn

    2016-01-01

    The perfect absorption of light in subwavelength thickness layers generally relies on exotic materials, metamaterials or thick metallic gratings. Here we demonstrate that total light absorption can be achieved in ultra-thin gratings composed of conventional materials, including relatively weakly-absorbing semiconductors, which are compatible with optoelectronic applications such as photodetectors and optical modulators. We fabricate a 41 nm thick antimony sulphide grating structure that has a measured absorptance of A = 99.3% at a visible wavelength of 591 nm, in excellent agreement with theory. We infer that the absorption within the grating is A = 98.7%, with only A = 0.6% within the silver mirror. A planar reference sample absorbs A = 7.7% at this wavelength.

  11. Hybrid semiconductor-dielectric metamaterial modulation for switchable bi-directional THz absorbers

    Science.gov (United States)

    Le, Ly Nguyen; Thang, Nguyen Manh; Thuy, Le Minh; Tung, Nguyen Thanh

    2017-01-01

    There is an increasing interest for electromagnetic metamaterials that show mutable absorption properties with real-time and dynamic control. In this paper, we investigate a modulation of bi-directional metamaterial absorbers that is thermally switchable at terahertz frequencies. The metamaterial absorber is composed of symmetric hybrid semiconductor-dielectric cut-wire-pair structures, whose electromagnetic responses can be actively manipulated by utilizing an external heat source. As increasing the temperature of metamaterials from 300 to 350 K, we demonstrate that the magnetic resonance can be systematically blue-shifted and overlapped with the electric resonance, which is unaffectedly settled at about 0.8 THz. This superposition provides an effective mechanism to control the absorption intensity from 43% to nearly 95%. Finite integration simulation technique, standard retrieval method, and equivalent circuit model are employed to elaborate our idea.

  12. High energy Er-doped Q-switched fiber laser with WS2 saturable absorber

    Science.gov (United States)

    Li, Lu; Wang, Yonggang; Wang, Zhen Fu; Wang, Xi; Yang, Guowen

    2018-01-01

    The report presents a stable Q-switched Er-doped fiber (EDF) laser with WS2-based saturable absorber (SA). The SA is obtained by mixing WS2 dispersion with polyvinyl alcohol (PVA) into polystyrene cells, and then evaporating them to form WS2/PVA film. The modulation depth (MD) of WS2/PVA is 2% and the saturable intensity (Isat) is 27.2 MW/cm2. Employing the WS2/PVA film into EDF laser cavity, stable Q-switched operation is achieved with central wavelength of 1560 nm. The repetition rate can be tuned from 16.15 to 60.88 kHz with increasing pump power from 30 to 320 mW. The single pulse energy increases from 82 to 195 nJ and then decreases down to 156 nJ with increasing pump power from 30 to 320 mW. The pulse width shows the same variation trend. The shortest pulse duration of 2.396 μs and the maximum single pulse energy of 195 nJ are obtained at the pump power of 220 mW. To the best of our knowledge, 195 nJ is the largest single pulse energy at 1.55 μm region with TMDs as Q-switcher. The signal-to-noise ratio (SNR) is measured to be 60 dB at the pump power of 130 mW. The long term stability of working is good too. The experimental results evidently show that the WS2/PVA SA can work as a promising Q-switcher for high power fiber lasers.

  13. Concentration effect of carbon nanotube based saturable absorber on stabilizing and shortening mode-locked pulse.

    Science.gov (United States)

    Chiu, Jin-Chen; Lan, Yi-Fen; Chang, Chia-Ming; Chen, Xi-Zong; Yeh, Chao-Yung; Lee, Chao-Kuei; Lin, Gong-Ru; Lin, Jiang-Jen; Cheng, Wood-Hi

    2010-02-15

    We comprehensively investigated the concentration effect of dispersed single-walled carbon nanotubes (SWCNTs) in polymer films for being a saturable absorber (SA) to stabilize the mode locking performance of the erbium-doped fiber laser (EDFL) pulse through the diagnosis of its nonlinear properties of SA. The measured modulation depth was from 1 to 4.5% as the thickness increased 18 to 265 microm. The full-width half-maximum (FWHM) of the stable mode-locked EDFL (MLEDFL) pulse decreased from 3.43 to 2.02 ps as the concentrations of SWCNTs SA increased 0.125 to 0.5 wt%. At constant concentration of 0.125 wt%, the similar pulse shortening effect of the MLEDFL was also observed when the FWHM decreased from 3.43 to 1.85 ps as the thickness of SWCNTs SA increased 8 to 100 microm. With an erbium-doped fiber length of 80 cm, the shortest pulse width of 1.85 ps were achieved at 1.56 microm with a repetition rate of 11.1 MHz and 0.2 mW of the output power under an output coupling ratio of 5%. An in-depth study on the stable mode-locked pulse formation employing SWCNTs SA, it is possible to fabricate the SWCNT films for use in high performance MLEDFL and utilization of many other low-cost nanodevices.

  14. Passively Q-switched and mode-locked erbium doped fiber laser based on N-doped graphene saturable absorber

    Science.gov (United States)

    Ahmad, H.; Aidit, S. N.; Ooi, S. I.; Rezayi, M.; Tiu, Z. C.

    2017-10-01

    A passively Q-switched and mode-locked erbium-doped fiber laser based on a nitrogen-doped graphene saturable absorber is demonstrated. The N-doped graphene based saturable absorber has a modulation depth of 37.88% and a saturation intensity of 0.016 73 MW cm-2. By integrating the N-doped graphene saturable absorber into the laser cavity, a stable Q-switched operation with a centre wavelength of 1561.1 nm is obtained with a pulse energy of up to 29.0 nJ. As the pump power increases, the Q-switching operation transits into a mode-locking operation. The mode-locking operation is achieved with a centre wavelength of 1560 nm, a pulse width of 0.98 ps, a repetition rate of 28.5 MHz and a signal to noise ratio of up to 40 dB in the RF spectrum.

  15. Multilayer black phosphorus as broadband saturable absorber for pulsed lasers from 1 to 2.7 {\\mu}m wavelength

    CERN Document Server

    Kong, Lingchen; Xie, Guoqiang; Guo, Zhinan; Zhang, Han; Yuan, Peng; Qian, Liejia

    2015-01-01

    It attracts wide interest to seek universe saturable absorber covering wavelengths from near infrared to mid-infrared band. Multilayer black phosphorus, with variable direct bandgap (0.3-2 eV) depending on the layer number, becomes a good alternative as a universe saturable absorber for pulsed lasers. In this contribution, we first experimentally demonstrated broadband saturable absorption of multilayer black phosphorus from 1 {\\mu}m to 2.7 {\\mu}m wavelength. With the as-fabricated black phosphorus nanoflakes as saturable absorber, stable Q-switching operation of bulk lasers at 1.03 {\\mu}m, 1.93 {\\mu}m, 2.72 {\\mu}m were realized, respectively. In contrast with large-bandgap semiconducting transition metal dichalcogenides, such as MoS2, MoSe2, multilayer black phosphorus shows particular advantage at the long wavelength regime thanks to its narrow direct bandgap. This work will open promising optoelectronic applications of black phosphorus in mid-infrared spectral region and further demonstrate that BP may fil...

  16. Demonstration of passive saturable absorber by utilizing MWCNT-ABS filament as starting material

    Science.gov (United States)

    Zuikafly, S. N. F.; Ahmad, F.; Ibrahim, M. H.; Latif, A. A.; Harun, S. W.

    2017-06-01

    This work demonstrated a stable passively Q-switched laser with the employment MWCNTs dispersed in acrylonitrile butadiene styrene (ABS) resin (MWCNTs-ABS) based filament as passive saturable absorber. The simple fabrication process of the SA is further explained, started from the process of extruding the filament through a 3D printer nozzle at 210 °C to reduce the diameter from 1.75 mm to 200 μm. It is then weighed to about 25 mg and mixed with 1 ml acetone before sonicated for 5 minutes to dissolve the ABS. The resultant MWCNTs-acetone suspension is dropped on a glass slide to be characterized using Field-Emission Scanning Electron Microscope (FESEM) and Raman spectroscopy. It is also drop-casted on the end of a fiber ferrule to be integrated in the laser cavity. The proposed work revealed that the laser oscillated at about 1558 nm with threshold input pump power of 22.54 mW and maximum input pump power of 108.8 mW. The increase in pump power resulted in the increase in repetition rate where the pulse train increases from 8.96 kHz to 39.34 kHz while the pulse width decreases from 33.58 μs to 5.14 μs. The generated pulsed laser yields a maximum of 1.01 mW and 5.53 nJ of peak power and pulse energy respectively. The signal-to-noise ratio of 40 dB indicates that the generated pulse is stable.

  17. Dynamic evolution of the dissipative soliton in passively mode-locked fiber laser based on black phosphorus as a new saturable absorber

    Science.gov (United States)

    Ma, Chunyang; Tian, Xiaojian; Gao, Bo; Wu, Ge

    2018-01-01

    Black phosphorus (BP) is a promising two dimensional (2D) material due to its electronic and optical properties. Hence, we use BP as a new saturable absorber in passively mode-locked (PML) fiber laser to generate dissipative solitons. Numerical simulations show that under the same conditions, the dissipative soliton generated by PML fiber laser based on BP as a saturable absorber has better physical properties than other 2D materials (such as graphene, transition metal dichalcogenides, topological insulators) as a saturable absorber. With the increase of pump power, dissipative soliton requires more pump power to split into multi-soliton, which means PML fiber laser using BP as a saturable absorber generates the dissipative soliton has high nonlinearity tolerance. According to this paper we can find that BP is an ideal saturable absorber and can be used for ultrashort optical pulse generation.

  18. Output power PDF of a saturated semiconductor optical amplifier: Second-order noise contributions by path integral method

    DEFF Research Database (Denmark)

    Öhman, Filip; Mørk, Jesper; Tromborg, Bjarne

    2007-01-01

    We have developed a second-order small-signal model for describing the nonlinear redistribution of noise in a saturated semiconductor optical amplifier. In this paper, the details of the model are presented. A numerical example is used to compare the model to statistical simulations. We show...

  19. Semiconductor-based Multilayer Selective Solar Absorber for Unconcentrated Solar Thermal Energy Conversion.

    Science.gov (United States)

    Thomas, Nathan H; Chen, Zhen; Fan, Shanhui; Minnich, Austin J

    2017-07-13

    Solar thermal energy conversion has attracted substantial renewed interest due to its applications in industrial heating, air conditioning, and electricity generation. Achieving stagnation temperatures exceeding 200 °C, pertinent to these technologies, with unconcentrated sunlight requires spectrally selective absorbers with exceptionally low emissivity in the thermal wavelength range and high visible absorptivity for the solar spectrum. In this Communication, we report a semiconductor-based multilayer selective absorber that exploits the sharp drop in optical absorption at the bandgap energy to achieve a measured absorptance of 76% at solar wavelengths and a low emittance of approximately 5% at thermal wavelengths. In field tests, we obtain a peak temperature of 225 °C, comparable to that achieved with state-of-the-art selective surfaces. With straightforward optimization to improve solar absorption, our work shows the potential for unconcentrated solar thermal systems to reach stagnation temperatures exceeding 300 °C, thereby eliminating the need for solar concentrators for mid-temperature solar applications such as supplying process heat.

  20. Pulse train amplification and regeneration based on semiconductor quantum dots waveguide

    DEFF Research Database (Denmark)

    Chen, Yaohui; Öhman, Filip; Mørk, Jesper

    2008-01-01

    We numerical analyze pulse train amplification up to 200 Gbit/s in quantum dot amplifiers and present regeneration properties with saturable absorber based on semiconductor quantum dot waveguides.......We numerical analyze pulse train amplification up to 200 Gbit/s in quantum dot amplifiers and present regeneration properties with saturable absorber based on semiconductor quantum dot waveguides....

  1. Tungsten disulfide - graphene oxide as saturable absorber for passively Q-switched mode-locked Nd: GdTaO4 laser at 1066 nm

    Science.gov (United States)

    Song, Qi; Zhang, Bingyuan; Wang, Guoju; Zhang, Qingli

    2018-01-01

    Tungsten disulfide (WS2) & Graphene oxide (GO) based saturable absorber (SA) was demonstrated and studies for passively Q-switched mode-locked Nd:GdTaO4 laser. The fabrication process of mixed SA was described. Passively Q-switched mode-locked operation with sub-600ps pulses was obtained by using this SA. Taking into account the simpler manufacturing progress, larger single pulse energy and better modulation depth, the mixed WS2-GO saturable absorber seems to be good way as suitable saturable absorber for solid state lasers.

  2. Mode-locked ytterbium-doped all-fiber lasers based on few-layer black phosphorus saturable absorbers

    Science.gov (United States)

    Song, Huaqing; Wang, Qi; Zhang, Yunfan; Li, Li

    2017-07-01

    In this paper, we demonstrated ytterbium-doped mode-locked fiber lasers based on saturable absorbers (SAs) made of few-layer black phosphorus (BP) with all normal dispersion. The few-layer BP was prepared with the liquid phase exfoliation method and was deposited onto fiber facets by an optically driven process. By incorporating the BP-SA into an ytterbium-doped fiber cavity, stable mode-locking laser operation in all-normal dispersion region was achieved with a repetition rate of 46.3 MHz. The laser spectrum was centered at 1030.6 nm with a 3 dB bandwidth of 0.11 nm. Maximum output power of 32.5 mW was achieved and showing no signs of saturation.

  3. Investigation of passively synchronized dual-wavelength Q-switched lasers based on V:YAG saturable absorber

    DEFF Research Database (Denmark)

    Janousek, Jiri; Tidemand-Lichtenberg, Peter; Mortensen, Jesper Liltorp

    2006-01-01

    states of synchronization. A theoretical model based on rate equations, which has been developed in order to investigate optical performance of the laser system, is in a good agreement with the experimental results. The principle of synchronized Q-switching can lead to new, pulsed all-solid-state light......In this paper the results of a theoretical and experimental investigation of synchronized passive Q-switching of two Nd:YVO4-based solid-state lasers operating at two different wavelengths, is described. A V:YAG saturable absorbing material was used as a passive Q-switch performing...... the synchronization of the two laser fields. This material provides Q-switching operation at both 1064 and 1342 nm wavelengths simultaneously, saturating the same energy level. By adjusting the pump power of both lasers, it was possible to optimize the overlap of the two pulse trains and to switch between different...

  4. Spectrally selective solar absorber with sharp and temperature dependent cut-off based on semiconductor nanowire arrays

    Science.gov (United States)

    Wang, Yang; Zhou, Lin; Zheng, Qinghui; Lu, Hong; Gan, Qiaoqiang; Yu, Zongfu; Zhu, Jia

    2017-05-01

    Spectrally selective absorbers (SSA) with high selectivity of absorption and sharp cut-off between high absorptivity and low emissivity are critical for efficient solar energy conversion. Here, we report the semiconductor nanowire enabled SSA with not only high absorption selectivity but also temperature dependent sharp absorption cut-off. By taking advantage of the temperature dependent bandgap of semiconductors, we systematically demonstrate that the absorption cut-off profile of the semiconductor-nanowire-based SSA can be flexibly tuned, which is quite different from most of the other SSA reported so far. As an example, silicon nanowire based selective absorbers are fabricated, with the measured absorption efficiency above (below) bandgap ˜97% (15%) combined with an extremely sharp absorption cut-off (transition region ˜200 nm), the sharpest SSA demonstrated so far. The demonstrated semiconductor-nanowire-based SSA can enable a high solar thermal efficiency of ≳86% under a wide range of operating conditions, which would be competitive candidates for the concentrated solar energy utilizations.

  5. Q-switched thulium-doped fibre laser operating at 1900 nm using multi-walled carbon nanotubes saturable absorber

    Directory of Open Access Journals (Sweden)

    Norazlina Saidin

    2014-06-01

    Full Text Available Simple, low-cost and stable passive Q-switched thulium-doped fibre lasers (TDFLs operating at 1892.4 and 1910.8 nm are demonstrated using 802 and 1552 nm pumping schemes, respectively, in conjunction with a multi-walled carbon nanotubes (MWCNTs saturable absorber (SA. The MWCNTs composite is prepared by mixing the MWCNTs homogeneous solution into a dilute polyvinyl alcohol (PVA polymer solution before it is left to dry at room temperature to produce thin film. Then the film is sandwiched between two FC/PC fibre connectors and integrated into the laser cavity for Q-switching pulse generation. The pulse repetition rate of the TDFL configured with 802 nm pump can be tuned from 3.8 to 4.6 kHz, whereas the corresponding pulse width reduces from 22.1 to 18.3 μs as the pump power is increased from 187.3 to 194.2 mW. On the other hand, with 1552 nm pumping, the TDFL generates optical pulse train with a repetition rate ranging from 13.1 to 21.7 kHz with a pulse width of 11.5–7.9 μs when the pump power is tuned from 302.2 to 382.1 mW. A higher performance Q-switched TDFL is expected to be achieved with the optimisation of the MWCNT-SA saturable absorber and laser cavity.

  6. Saturation properties of four-wave mixing between short optical pulses in semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Mørk, Jesper; Mecozzi, A.; Diez, S.

    1999-01-01

    Summary form only given. The authors report the first comparison between theory and experiment on the four wave mixing between trains of short pulses in semiconductor optical amplifiers. The theory is able to explain all qualitative features seen in the experiment.......Summary form only given. The authors report the first comparison between theory and experiment on the four wave mixing between trains of short pulses in semiconductor optical amplifiers. The theory is able to explain all qualitative features seen in the experiment....

  7. Ultrashort pulse generation in mode-locked erbium-doped fiber lasers with tungsten disulfide saturable absorber

    Science.gov (United States)

    Liu, Mengli; Liu, Wenjun; Pang, Lihui; Teng, Hao; Fang, Shaobo; Wei, Zhiyi

    2018-01-01

    Tungsten disulfide (WS2), as one of typical transition metal dichalcogenides with the characteristics of strong nonlinear polarization and wide bandgap, has been widely used in such fields as biology and optoelectronics. With the magnetron sputtering technique, the saturable absorber (SA) is prepared by depositing WS2 and Au film on the tapered fiber. The heat elimination and damage threshold can be improved for the WS2 SA with evanescent field interaction. Besides, the Au film is deposited on the surface of the WS2 film to improve their reliability and avoid being oxidized. The fabricated SA has a modulation depth of 14.79%. With this SA, we obtain a relatively stable mode-locked fiber laser with the pulse duration of 288 fs, the repetition rate of 41.4 MHz and the signal to noise ratio of 58 dB.

  8. Dual-wavelength synchronous mode-locked Yb:LSO laser using a double-walled carbon nanotube saturable absorber.

    Science.gov (United States)

    Feng, Chao; Hou, Wei; Yang, Jimin; Liu, Jie; Zheng, Lihe; Su, Liangbi; Xu, Jun; Wang, Yonggang

    2016-05-01

    A dual-wavelength, passively mode-locked Yb:LSO laser was demonstrated using a double-walled carbon nanotube as a saturable absorber. The maximum average output power of the laser was 1.34 W at the incident pump power of 9.94 W. The two central wavelengths were 1057 and 1058 nm. The corresponding pulse duration of the autocorrelation interference pattern was about 15 ps, while the beat pulse repetition rate was 0.17 THz and the width of one beat pulse about 2 ps. When the incident pump power was above 10.25 W, a multiwavelength mode-locked oscillation phenomenon was observed. After employing a pair of SF10 prisms, a 1058.7 nm single-wavelength mode-locked laser was obtained with a pulse width of 7 ps.

  9. Novel D-shaped fiber fabrication method for saturable absorber application in the generation of ultra-short pulses

    Science.gov (United States)

    Ahmad, H.; Safaei, R.; Rezayi, M.; Amiri, I. S.

    2017-08-01

    A cost-efficient, time-saving and effective technique for the fabrication of D-shaped fibers is presented, to provide a platform with a strong evanescent field to be used as a saturable absorber (SA). This technique provides flexibility by removing the required portion of the fiber, and a small polished length which offers a unique opportunity to deposit SA on its surface by simply submerging it in the SA solution without high losses. A compact fiber laser utilizing a graphene oxide coating on a fabricated D-shaped fiber as an SA capable of generating ultrashort pulses is designed and verified. We report the generation of ultrafast pulses as short as 227 fs with a 34.7 MHz repetition rate, having a 3 dB bandwidth of 14 nm at the 1570 nm center wavelength.

  10. The generation of Q-switched erbium-doped fiber laser using black phosphorus saturable absorber with 8% modulation depth

    Science.gov (United States)

    Fauziah, C. M.; Rosol, A. H. A.; Latiff, A. A.; Harun, S. W.

    2017-06-01

    We report a generation of the Q-switched laser operating in 1.55-micron region by using black phosphorus (BP) as a saturable absorber (SA). A 980-nm laser diode was pumped into Erbium-doped fiber (EDF) gain medium in ring cavity configuration. The BP-based SA was prepared by mechanically exfoliating the BP crystal using scotch tape. The obtained BP-tape SA has a modulation depth of 8 %. To realize a Q-switching operation, a small piece of the tape is then integrated into between two fiber ferrule tips. A stable Q-switching operation started at 40 mW. The maximum repetition rate obtainable at 28.57 kHz, with pulse width of 5.35 μs. This finding shows the BP is one of the promising material to work as an SA for pulsed laser generation.

  11. Mode-locked Erbium-doped fiber laser generation using hybrid ZnO/GO saturable absorber

    Science.gov (United States)

    Hassan, H.; Ariannejad, M. M.; Safaei, R.; Amiri, I. S.; Ahmad, H.

    2017-06-01

    Mode-locked generation of erbium-doped fiber laser (EDFL) with hybrid zinc oxide/graphene oxide (ZnO/GO) thin film as saturable absorber (SA) is proposed and practically demonstrated. The SA shows the modulation depth of 18.69% and it has been sandwiched between the fiber ferrules. Mode-locked pulse occurred at pump power of 14.8 mW and by varying the pump power to maximum threshold 27.43 mW, the repetition rate of the pulse fixed at 19.98 MHz at 1563 nm of central wavelength. The pulse width is estimated as 0.90 ps, whereas the pulse energy is calculated as 27.0 nJ.

  12. Black phosphorus saturable absorber for a diode-pumped passively Q-switched Er:CaF2 mid-infrared laser

    Science.gov (United States)

    Li, Chun; Liu, Jie; Guo, Zhinan; Zhang, Han; Ma, Weiwei; Wang, Jingya; Xu, Xiaodong; Su, Liangbi

    2018-01-01

    A multilayer black phosphorus, as a novel two dimensional saturable absorber, has superb saturable absorption properties for a Er:CaF2 solid-state pulse laser. The pulse laser is realized at mid-infrared region with the passively Q-switched technology by a diode-pumping. The high-quality black phosphorus saturable absorber is fabricated by liquid phase exfoliation method. The pulse laser generates the pulses operation with the pulse duration of 954.8 ns, the repetition rate of 41.93 kHz, the pulse energy of 4.25 μJ and the peak power of 4.45 W. Our work demonstrates that black phosphorus could be used as a kind of efficient mid-infrared region optical absorber for ultrafast photonics.

  13. A transfer function approach to the small-signal response of saturated semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Nielsen, Mads Lønstrup; Blumenthal, D. J.; Mørk, Jesper

    2000-01-01

    A theoretical analysis of the small-signal frequency response (SSFR) of a wavelength converter based on cross-gain modulation in a semiconductor optical amplifier with a finite waveguide loss is presented. We use a transfer function formalism to explain the resonant behavior of the frequency...

  14. Single-wall carbon nanotubes and graphene oxide-based saturable absorbers for low phase noise mode-locked fiber lasers

    OpenAIRE

    Xiaohui Li; Kan Wu; Zhipei Sun; Bo Meng; Yonggang Wang; Yishan Wang; Xuechao Yu; Xia Yu; Ying Zhang; Perry Ping Shum; Qi Jie Wang

    2016-01-01

    Low phase noise mode-locked fiber laser finds important applications in telecommunication, ultrafast sciences, material science, and biology, etc. In this paper, two types of carbon nano-materials, i.e. single-wall carbon nanotube (SWNT) and graphene oxide (GO), are investigated as efficient saturable absorbers (SAs) to achieve low phase noise mode-locked fiber lasers. Various properties of these wall-paper SAs, such as saturable intensity, optical absorption and degree of purity, are found t...

  15. Measurements and calculation of the critical pulsewidth for gain saturation in semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Borri, Paola; Scaffetti, Stefano; Mørk, Jesper

    1999-01-01

    The nonlinear gain response of InGaAsP bulk optical amplifiers under ultrafast optical excitation at 1.53 ìm investigated. In particular, the dependence of the gain saturation energy on the pulse duration is measured in the range of pulse durations from 150 fs to 11 ps, for different bias currents...... and lengths of the amplifier. By comparison with a theoretical model, a critical pulsewidth is inferred below which nonlinear carrier dynamics like carrier heating and spectral hole burning dominate the gain saturation....

  16. Reduction of interferometric crosstalk induced penalty using a saturated semiconductor optical amplifier

    DEFF Research Database (Denmark)

    Liu, Fenghai; Zheng, Xueyan; Poulsen, Henrik Nørskov

    2000-01-01

    We successfully demonstrated that a simple saturated SOA could be used to reduce the impact from the interferometric crosstalk at 2.5 and 10 Gb/s. It is shown that 4 dB more crosstalk power can be tolerated at 1 dB penalty by using the SOA. This will greatly reduce the crosstalk requirement...

  17. Q-switched double-clad Ytterbium-doped fiber laser using MoS2 flakes saturable absorber

    Science.gov (United States)

    Tey, K. L.; Rahman, M. F. A.; Rosol, A. H. A.; Rusdi, M. F. M.; Mahyuddin, M. B. H.; Harun, S. W.; Latiff, A. A.

    2017-06-01

    By sandwiching MoS2 thin flakes between two fiber ferrule connectors in the ring cavity, we successfully demonstrate the passive Q-switched fiber laser operation. The cavity consists of all-fiber double-clad ytterbium-doped fiber (YDF) as a gain medium and MoS2 tape as a saturable absorber (SA). The SA was prepared from a commercial MoS2 crystal (~ 99.8 % purity) through mechanical exfoliation process. A piece of 1 mm x 1 mm tape contains MoS2 thin flakes was sandwiched between two fiber connectors. By controlling loss and gain in the cavity, stable Q-switching operation were generated. The repetition rate was tunable from 4.8 kHz to 17.2 kHz as the pump power is varied from 753 mW to 1133 mW. The obtained pulse width is also narrowed from 21.3 µs to 10.44 µs with the same variation of pump power.

  18. A Filmy Black-Phosphorus Polyimide Saturable Absorber for Q-Switched Operation in an Erbium-Doped Fiber Laser

    Directory of Open Access Journals (Sweden)

    Tianxian Feng

    2016-11-01

    Full Text Available We demonstrate an erbium-doped fiber laser passively Q-switched by a black-phosphorus polyimide film. The multi-layer black-phosphorus (BP nanosheets were prepared via a liquid exfoliation approach exploiting N-methylpyrrolidone as the dispersion liquid. By mixing the BP nanosheets with polyimide (PI, a piece of BP–PI film was obtained after evaporating the mixture in a petri dish. The BP–PI saturable absorber had a modulation depth of 0.47% and was inserted into an erbium-doped fiber laser to realize passive Q-switched operations. The repetition rate of the Q-switched laser increased from 5.73 kHz to 31.07 kHz when the laser pump was enhanced from 31.78 mW to 231.46 mW. Our results show that PI is an excellent host material to protect BP from oxidation, and the BP–PI film can act as a promising nonlinear optical device for laser applications.

  19. Q-switching and mode-locking pulse generation with graphene oxide paper-based saturable absorber

    Directory of Open Access Journals (Sweden)

    Sulaiman Wadi Harun

    2015-06-01

    Full Text Available Q-switched and mode-locked erbium-doped fibre lasers (EDFLs are demonstrated by using non-conductive graphene oxide (GO paper as a saturable absorber (SA. A stable and self-starting Q-switched operation was achieved at 1534.4 nm by using a 0.8 m long erbium-doped fibre (EDF as a gain medium. The pulse repetition rate changed from 14.3 to 31.5 kHz, whereas the corresponding pulse width decreased from 32.8 to 13.8 µs as the pump power increased from 22 to 50.5 mW. A narrow spacing dual-wavelength Q-switched EDFL could also be realised by including a photonics crystal fibre and a tunable Bragg filter in the setup. It can operate at a maximum repetition rate of 31 kHz, with a pulse duration of 7.04 µs and pulse energy of 2.8 nJ. Another GOSA was used to realise mode-locked EDFL in a different cavity consisting of a 1.6 m long EDF in conjunction with 1480 nm pumping. The laser generated a soliton pulse train with a repetition rate of 15.62 MHz and pulse width of 870 fs. It is observed that the proposed fibre lasers have a low pulsing threshold pump power as well as a low damage threshold.

  20. Photonic crystal fiber based dual-wavelength Q-switched fiber laser using graphene oxide as a saturable absorber.

    Science.gov (United States)

    Ahmad, H; Soltanian, M R K; Pua, C H; Alimadad, M; Harun, S W

    2014-06-01

    A Q-switched dual-wavelength fiber laser with narrow channel spacing is proposed and demonstrated. The fiber laser is built around a 3 m long erbium doped fiber as the gain medium and a 10 cm long photonic crystal fiber (PCF) as the element used to generate the dual-wavelength output. The PCF has a solid core approximately 4.37 μm in diameter and is surrounded by microscopic air-holes with a diameter of about 5.06 μm each as well as a zero-dispersion wavelength of about 980 nm. A graphene oxide based saturable absorber is used to generate the desired pulsed output. At the maximum pump power of 72 mW the laser is capable of generating pulses with a repetition rate and pulse-width of 31.0 kHz and 7.0 μs, respectively, as well as an average output power and pulse energy of 0.086 mW and 2.8 nJ, respectively. The proposed fiber laser has substantial potential for use in applications that require longer duration pulsed outputs such as in range finding and terahertz radiation generation.

  1. Q-switched Zr-EDF laser using single-walled CNT/PEO polymer composite as a saturable absorber

    Science.gov (United States)

    Ahmad, H.; Zulkifli, A. Z.; Thambiratnam, K.; Harun, S. W.

    2013-01-01

    In this work, we propose and demonstrate a compact, Zirconia-Erbium Doped Fiber (Zr-EDF), a new type of fiber with zirconia dopants added to the silica glass host to significantly increase erbium ion concentrations in the glass matrix. Q-switched behavior is obtained by using a Single-Walled Carbon Nanotube/Polyethylene Oxide composite sandwiched between two fiber ferrules as a saturable absorber. The Zr-EDF fiber laser has a nearly flat amplified spontaneous emission spectrum from 1545 to 1565 nm, unlike conventional erbium doped fibers. The pulse train generated has a maximum repetition rate and pulse width of 14.20 kHz and 8.6 μs respectively. The highest average output power of the system is 270.0 μW, with a corresponding pulse energy of 19.02 nJ. The proposed system is compact, cost-effective and rugged and has applications in range-finding, medicine and in industry.

  2. Holmium Oxide Film as a Saturable Absorber for 2 μm Q-Switched Fiber Laser

    Science.gov (United States)

    Rahman, M. F. A.; Rusdi, M. F. M.; Lokman, M. Q.; Mahyuddin, M. B. H.; Latiff, A. A.; Rosol, A. H. A.; Dimyati, K.; Harun, S. W.

    2017-05-01

    This work reports on the use of the holmium oxide (Ho {}2 O {}3 ) polymer film as a saturable absorber (SA) for generating stable Q-switching pulses operating in a 2-μm region in a thulium-doped fiber laser cavity. The SA is prepared by diluting a commercial Ho {}3 O {}2 powder and then mixing it with polyvinyl alcohol (PVA) solution to form a Ho {}2 O {}3 -PVA film. A tiny part of the film about 1 mm×1 mm in size is sandwiched between two fiber ferrules with the help of index matching gel. When incorporated in a laser cavity driven by a 1552-nm pump, stable Q-switching pulses are observed at 1955 nm within the pump power range of 363-491 mW. As the pump power increases within this range, the repetition rate rises from 26 kHz to 39 kHz, as the pulse width drops from 4.22 μs to 2.57 μs. The laser operates with a signal-to-noise ratio of 47 dB, and the maximum output power and the pulse energy obtained are 2.67 mW and 69 nJ, respectively. Our results successfully demonstrate that the Ho {}2 O {}3 film can be used as a passive SA to generate a 2-μm pulse laser.

  3. Pulse width shaping of passively mode-locked soliton fiber laser via polarization control in carbon nanotube saturable absorber.

    Science.gov (United States)

    Jeong, Hwanseong; Choi, Sun Young; Rotermund, Fabian; Yeom, Dong-Il

    2013-11-04

    We report the continuous control of the pulse width of a passively mode-locked fiber laser via polarization state adjustment in a single-walled carbon nanotube saturable absorber (SWCNT-SA). The SWCNT, coated on the side-polished fiber, was fabricated with optimized conditions and used for stable mode-locking of the fiber laser without Q-switching instabilities for any polarization state of the laser intra-cavity. The 3-dB spectral bandwidth of the mode-locked pulses can be continuously tuned from 1.8 nm to 8.5 nm with the polarization control for a given laser cavity length and applied pump power. A pulse duration varying from 470 fs to 1.6 ps was also observed with a change in the spectral bandwidth. The linear and the nonlinear transmission properties of the SA were analyzed, and found to exhibit different modulation depths depending on the input polarization state in the SA. The largest modulation depth of the SA was observed at the polarization state of the transverse electric mode that delivers shortest pulses at the laser output.

  4. LD-end-pumped passively Q-switched Nd:YAG ceramic laser with single wall carbon nanotube saturable absorber

    Science.gov (United States)

    Li, C. Y.; Bo, Y.; Zong, N.; Wang, Y. G.; Jiang, B. X.; Pan, Y. B.; Niu, G.; Fan, Z. W.; Peng, Q. J.; Cui, D. F.; Xu, Z. Y.

    2012-10-01

    We report on a LD-end-pumped passively Q-switched Nd:YAG ceramic laser by using a novel single wall carbon nanotube saturable absorber (SWCNT-SA). The SWCNT wafer was fabricated by electric Arc discharge method on quartz substrate with absorption wavelength of 1064 nm. We firstly investigated the continuous wave (CW) laser performance and scattering properties of Nd:YAG ceramic sample. For the case of passively Q-switched operation, a maximum output power of 376 mW was obtained at an incident pump power of 8.68 W at 808 nm, corresponding to an optical-optical conversion efficiency of 4.3%. The repetition rate as the increase of pump power varied from 14 to 95 kHz. The minimum pulse duration of 1.2 μs and maximum pulse energy of 4.5 μJ was generated at a repetition rate of 31.8 kHz.

  5. Black phosphorus as saturable absorber for the Q-switched Er:ZBLAN fiber laser at 2.8 {\\mu}m

    CERN Document Server

    Qin, Zhipeng; Zhang, Han; Zhao, Chujun; Yuan, Peng; Wen, Shuangchun; Qian, Liejia

    2015-01-01

    Black phosphorus, a newly emerged two-dimensional material, has attracted wide attention as novel photonic material. Here, multi-layer black phosphorus is successfully fabricated by liquid phase exfoliation method. By employing black phosphorus as saturable absorber, we demonstrate a passively Q-switched Er-doped ZBLAN fiber laser at the wavelength of 2.8 {\\mu}m. The modulation depth and saturation fluence of the black phosphorus saturable absorber are measured to be 15% and 9 {\\mu}J/cm2, respectively. The Q-switched fiber laser delivers a maximum average power of 485 mW with corresponding pulse energy of 7.7 {\\mu}J and pulse width of 1.18 {\\mu}s at repetition rate of 63 kHz. To the best of our knowledge, this is the first time to demonstrate that black phosphorus can realize Q-switching of 2.8-{\\mu}m fiber laser. Our research results show that black phosphorus is a promising saturable absorber for mid-infrared pulsed lasers.

  6. Dissipative solitons characteristics in passively mode-locked Er-doped fiber laser based on black phosphorus as a new saturable absorber

    Science.gov (United States)

    Gao, Bo; Guo, Wei; Huo, Jiayu; Wu, Ge; Ma, Chunyang; Li, Jiaxin; Wang, Jialue

    2018-01-01

    Two-dimensional materials such as graphene or black phosphorus have attracted attention of researches in the field of ultra-fast photonics. In this paper, the structure of the passively mode-locked Er-doped fiber laser based on black phosphorus as a new saturable absorber has studied by modeling and analysis. The dissipative solitons characteristics in passively mode-locked Er-doped fiber laser are obtained in the simulation. The research focuses on analyzing the influence of gain bandwidth and gain saturation energy on the pulse duration, peak power, and single-pulse energy of the dissipative solitons.

  7. Diode-pumped passively Q-switched Nd:YVO4 laser using a reticularly ordered single-walled carbon nanotube saturable absorber

    Science.gov (United States)

    Zhang, Xiaodong; Zhao, Shengzhi; Li, Ying; Zhang, Yan; Li, Dechun; Yang, Kejian; Li, Xiangyang; Wang, Reng

    2017-12-01

    In this letter, we demonstrate a diode-pumped passively Q-switched Nd:YVO4 laser with reticularly ordered single-walled carbon nanotube as saturable absorber. Stable Q-switched pulses with a pulse energy of 0.322 μJ, a pulse width of 78.7 ns and a pulse repetition rate of 410.3 kHz have been obtained. Compared with the passively Q-switched laser with carbon nanotubes dispersed by sodium dodecyl sulfate (SDS), the laser with reticularly ordered single-walled carbon nanotube can produce shorter pulses and higher peak power at almost the same incident pump power. The results suggest that the reticularly ordered single-walled carbon nanotube can be an attractive candidate of saturable absorber for Q-switched laser.

  8. Ultra-broadband and wide-angle perfect absorber based on composite metal-semiconductor grating

    Science.gov (United States)

    Li, Xu; Wang, Zongpeng; Hou, Yumin

    2018-01-01

    In this letter, we present an ultra-broadband and wide-angle perfect absorber based on composite Ge-Ni grating. Near perfect absorption above 90% is achieved in a wide frequency range from 150 nm to 4200 nm, which covers almost the full spectrum of solar radiation. The absorption keeps robust in a wide range of incident angle from 0º to 60º. The upper triangle Ge grating works as an antireflection coating. The lower Ni grating works as a reflector and an effective energy trapper. The guided modes inside Ge grating are excited due to reflection of the lower Ni grating surface. In longer wavelength band, gap surface plasmons (GSPs) in the Ni grating are excited and couple with the guided modes inside the Ge grating. The coupled modes extend the perfect absorption band to the near-infrared region (150 nm-4200 nm). This design has potential application in photovoltaic devices and thermal emitters.

  9. CNT-based saturable absorbers with scalable modulation depth for Thulium-doped fiber lasers operating at 1.9 μm

    Science.gov (United States)

    Sobon, Grzegorz; Duzynska, Anna; Świniarski, Michał; Judek, Jarosław; Sotor, Jarosław; Zdrojek, Mariusz

    2017-04-01

    In this work, we demonstrate a comprehensive study on the nonlinear parameters of carbon nanotube (CNT) saturable absorbers (SA) as a function of the nanotube film thickness. We have fabricated a set of four saturable absorbers with different CNT thickness, ranging from 50 to 200 nm. The CNTs were fabricated via a vacuum filtration technique and deposited on fiber connector end facets. Each SA was characterized in terms of nonlinear transmittance (i.e. optical modulation depth) and tested in a Thulium-doped fiber laser. We show, that increasing the thickness of the CNT layer significantly increases the modulation depth (up to 17.3% with 200 nm thick layer), which strongly influences the central wavelength of the laser, but moderately affects the pulse duration. It means, that choosing the SA with defined CNT thickness might be an efficient method for wavelength-tuning of the laser, without degrading the pulse duration. In our setup, the best performance in terms of bandwidth and pulse duration (8.5 nm and 501 fs, respectively) were obtained with 100 nm thick CNT layer. This is also, to our knowledge, the first demonstration of a fully polarization-maintaining mode-locked Tm-doped laser based on CNT saturable absorber.

  10. Wavelength-Tunable Rectangular Pulses Generated from All-Fiber Mode-Locked Laser Based on Semiconductor Saturable Absorber Mirror

    Science.gov (United States)

    Wang, Zhao-Kum; Zou, Feng; Wang, Zi-Wei; Du, Song-Tao; Zhou, Jun

    2016-09-01

    Not Available Supported by the National High-Technology Research and Development Program of China under Grant No 2014AA041901, the NSAF Foundation of National Natural Science Foundation of China under Grant No U1330134, the Opening Project of Shanghai Key Laboratory of All Solid-State Laser and Applied Techniques under Grant No 2012ADL02, and the National Natural Science Foundation of China under Grant No 61308024.

  11. A high-energy passively Q-switched Yb-doped fiber laser based on WS2 and Bi2Te3 saturable absorbers

    Science.gov (United States)

    Wang, Junli; Li, Sha; Xing, Yupeng; Chen, Lei; Wei, Zhiyi; Wang, Yonggang

    2017-09-01

    In this paper, we report two different saturable absorbers based on WS2 film and Bi2Te3 film with similar preparation processes. A high-energy stable Q-switching pulse is achieved in identical cavity configurations for each absorber. A modulation depth of 10.17% and a maximum single pulse energy of 56.50 nJ are obtained when employing the WS2 film. However, using the Bi2Te3 film we obtain a higher modulation depth of 23.04% and a larger single pulse energy of 61.80 nJ, and stable dual-wavelength Q-switching operation was shown at a pump power of 92 mW.

  12. Pulse characteristics in a doubly Q-switched Nd:GGG laser with an acousto-optic modulator and a monolayer graphene saturable absorber

    Science.gov (United States)

    Wang, Di; Zhao, Jia; Yang, Kejian; Zhao, Shengzhi; Li, Tao; Li, Dechun; Li, Guiqiu; Qiao, Wenchao

    2017-11-01

    A doubly Q-switched Nd:GGG laser emitting 1064 nm wavelength with an acousto-optic modulator (AOM) and a monolayer graphene saturable absorber (SA) is presented to study the pulse characteristics. In comparison with singly passive Q-switched laser (SPQSL) with grapheme SA, the doubly Q-switched laser (DQSL) can effectively shorten the pulse width and improve the pulse peak power. The existence of the ramping behavior of pulse characteristics versus modulation frequency in DQSL is shown. The average output power, the pulse width, the pulse energy and the peak power are related to modulation frequency of AOM, and the point of inflection is dominated by pump power.

  13. Picosecond blue light pulse generation by frequency doubling of a gain-switched GaAlAs laser diode with saturable absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Ohya, J.; Tohmon, G.; Yamamoto, K.; Taniuchi, T. (Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd., Moriguchi, Osaka 570, (JapaN)); Kume, M. (Electronics Research Laboratory, Matsushita Electronics Corporation, Takatsuki, Osaka 569, (Japan))

    1990-06-04

    Picosecond blue light pulse generation by frequency doubling of a gain-switched GaAlAs laser diode in a proton-exchanged MgO:LiNbO{sub 3} waveguide is reported. High-peak fundamental pulse power of 1.23 W is obtained by employing a laser diode with saturable absorbers. Blue light pulse of 7.88 mW maximum peak power and 28.7 ps pulse width is generated in the form of Cherenkov radiation.

  14. Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers.

    Science.gov (United States)

    Lysevych, M; Tan, H H; Karouta, F; Fu, L; Jagadish, C

    2013-04-08

    In this paper we report a method to overcome the limitations of gain-saturation and two-photon absorption faced by developers of high power single mode InP-based lasers and semiconductor optical amplifiers (SOA) including those based on wide-waveguide or slab-coupled optical waveguide laser (SCOWL) technology. The method is based on Y-coupling design of the laser cavity. The reduction in gain-saturation and two-photon absorption in the merged beam laser structures (MBL) are obtained by reducing the intensity of electromagnetic field in the laser cavity. Standard ridge-waveguide lasers and MBLs were fabricated, tested and compared. Despite a slightly higher threshold current, the reduced gain-saturation in MBLs results in higher output power. The MBLs also produced a single spatial mode, as well as a strongly dominating single spectral mode which is the inherent feature of MBL-type cavity.

  15. Passively Q-switched of EDFL employing multi-walled carbon nanotubes with diameter less than 8 nm as saturable absorber

    Directory of Open Access Journals (Sweden)

    Zuikafly Siti Nur Fatin

    2017-01-01

    Full Text Available The paper demonstrates passively Q-switched erbium-doped fiber laser implementing multiwalled carbon nanotubes (MWCNTs based saturable absorber. The paper is the first to report the use of the MWCNTs with diameter less than 8 nm as typically, the diameter used is 10 to 20 nm. The MWCNTs is incorporated with water soluble host polymer, polyvinyl alcohol (PVA to produce a MWCNTs polymer composite thin film which is then sandwiched between two fiber connectors. The fabricated SA is employed in the laser experimental setup in ring cavity. The Q-switching regime started at threshold pump power of 103 mW and increasable to 215 mW. The stable pulse train from 41.6 kHz to 76.92 kHz with maximum average output power and pulse energy of 0.17 mW and 3.39 nJ are produced. The shortest pulse width of 1.9 μs is obtained in the proposed experimental work, making it the lowest pulse width ever reported using MWCNTs-based saturable absorber.

  16. Passively Q-switched of EDFL employing multi-walled carbon nanotubes with diameter less than 8 nm as saturable absorber

    Science.gov (United States)

    Nur Fatin Zuikafly, Siti; Ahmad, Fauzan; Haniff Ibrahim, Mohd; Wadi Harun, Sulaiman

    2017-11-01

    The paper demonstrates passively Q-switched erbium-doped fiber laser implementing multiwalled carbon nanotubes (MWCNTs) based saturable absorber. The paper is the first to report the use of the MWCNTs with diameter less than 8 nm as typically, the diameter used is 10 to 20 nm. The MWCNTs is incorporated with water soluble host polymer, polyvinyl alcohol (PVA) to produce a MWCNTs polymer composite thin film which is then sandwiched between two fiber connectors. The fabricated SA is employed in the laser experimental setup in ring cavity. The Q-switching regime started at threshold pump power of 103 mW and increasable to 215 mW. The stable pulse train from 41.6 kHz to 76.92 kHz with maximum average output power and pulse energy of 0.17 mW and 3.39 nJ are produced. The shortest pulse width of 1.9 μs is obtained in the proposed experimental work, making it the lowest pulse width ever reported using MWCNTs-based saturable absorber.

  17. Hybrid Q-switched laser with MoS2 saturable absorber and AOM driven sub-nanosecond KTP-OPO.

    Science.gov (United States)

    Qiao, Junpeng; Zhao, Shengzhi; Yang, Kejian; Zhao, Jia; Li, Guiqiu; Li, Dechun; Li, Tao; Qiao, Wenchao

    2017-02-20

    Two-dimensional (2D) materials, especially transition-metal dichalcogenides, such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2), have attracted great interests due to their exceptional optical properties as saturable absorbers in laser systems. In this work, at first, we presented a diode-pumped passively Q-switched laser with MoS2 saturable absorber (MoS2-SA). At an incident pump power of 6.54 W, a maximum output power of 1.15 W with a minimum pulse duration of 70.6 ns was obtained, which is the shortest pulse duration of diode pumped passively Q-switched laser with MoS2-SA to the best of our knowledge. Then, by using a hybrid Q-switched laser with a MoS2-SA and an acousto-optic modulator (AOM) as pumping fundamental laser, a sub-nanosecond KTiOPO4 (KTP) based intracavity optical parametric oscillation (IOPO) was realized. With an incident pump power of 10.2 W and AOM repetition rate of 10 kHz, the maximum output power of 183 mW with minimum pulse duration of 850 ps was obtained. The experimental results indicate that the IOPO pumped by the hybrid Q-switched laser with AOM and MoS2-SA can generate signal wave with shorter pulse duration than those IOPOs pumped by hybrid Q-switched laser with AOM and Cr4+:YAG or single-walled carbon nanotube saturable absober (SWCNT-SA) or monolayer graphene SA.

  18. Delayed feedback control of self-mobile cavity solitons in a wide-aperture laser with a saturable absorber

    Science.gov (United States)

    Schemmelmann, T.; Tabbert, F.; Pimenov, A.; Vladimirov, A. G.; Gurevich, S. V.

    2017-11-01

    We investigate the spatiotemporal dynamics of cavity solitons in a broad area vertical-cavity surface-emitting laser with saturable absorption subjected to time-delayed optical feedback. Using a combination of analytical, numerical, and path continuation methods, we analyze the bifurcation structure of stationary and moving cavity solitons and identify two different types of traveling localized solutions, corresponding to slow and fast motion. We show that the delay impacts both stationary and moving solutions either causing drifting and wiggling dynamics of initially stationary cavity solitons or leading to stabilization of intrinsically moving solutions. Finally, we demonstrate that the fast cavity solitons can be associated with a lateral mode-locking regime in a broad-area laser with a single longitudinal mode.

  19. True-time delay by slow light in a semiconductor waveguide with alternating amplifying and absorbing sections

    DEFF Research Database (Denmark)

    Öhman, Filip; Mørk, Jesper

    2006-01-01

    Modeling of slow light in a semiconductor waveguide with alternating gain and absorption sections demonstrate an increase in time delay by concatenating segments. A true-time delay is predicted over a large bandwidth at high frequency.......Modeling of slow light in a semiconductor waveguide with alternating gain and absorption sections demonstrate an increase in time delay by concatenating segments. A true-time delay is predicted over a large bandwidth at high frequency....

  20. High-power passively Q-switched Yb:YCa4O(BO3)3 laser with a GaAs crystal plate as saturable absorber.

    Science.gov (United States)

    Chen, Xiaowen; Han, Wenjuan; Xu, Honghao; Jia, Minghui; Yu, Haohai; Zhang, Huaijin; Liu, Junhai

    2015-04-10

    We report on efficient high-power passively Q-switched operation of a Yb:YCa4O(BO3)3 laser with a GaAs crystal plate acting as the saturable absorber. An average output power of 5.7 W at 1032 nm is generated at a pulse repetition rate of 166.7 kHz when the incident pump power is 26.8 W, with a slope efficiency determined to be 24.5%. The averaged pulse energy achieved is roughly 30 μJ and is increased to about 40 μJ when the output coupling used changes from 30% to 50%, while the shortest pulse width is measured to be 153 ns.

  1. Titanium Dioxide (TiO2) film as a new saturable absorber for generating mode-locked Thulium-Holmium doped all-fiber laser

    Science.gov (United States)

    Mohd Rusdi, Muhammad Farid; Latiff, Anas Abdul; Paul, Mukul Chandra; Das, Shyamal; Dhar, Anirban; Ahmad, Harith; Harun, Sulaiman Wadi

    2017-03-01

    We report the generation of mode-locked thulium-holmium doped fiber laser (THDFL) at 1979 nm. This is a first demonstration of mode-locked by using Titanium Dioxide (TiO2) film as a saturable absorber (SA). A piece of 1 mm×1 mm TiO2 film was sandwiched in between two fiber ferrule in the cavity. Fabrication process of TiO2 film incorporated a TiO2 and a polyvinyl alcohol (PVA). The stable 9 MHz repetition rate of mode-locked mode operation with 58 dB SNR was generated under pump power of 902-1062 mW. At maximum pump power, the mode-locked THDFL has output power and pulse energy of 15 mW and 1.66 nJ, respectively. Our results demonstrate the TiO2 can be used promisingly in ultrafast photonics applications.

  2. Sub-100  fs Tm:MgWO4 laser at 2017  nm mode locked by a graphene saturable absorber.

    Science.gov (United States)

    Wang, Yicheng; Chen, Weidong; Mero, Mark; Zhang, Lizhen; Lin, Haifeng; Lin, Zhoubin; Zhang, Ge; Rotermund, Fabian; Cho, Young Jun; Loiko, Pavel; Mateos, Xavier; Griebner, Uwe; Petrov, Valentin

    2017-08-15

    We present the first sub-100 fs bulk solid-state laser in the 2-μm spectral range employing the monoclinic Tm3+-dopedMgWO4 crystal as an active medium. By applying a graphene-based saturable absorber and chirped mirrors for dispersion management, stable self-starting mode-locked operation at 2017 nm was achieved. Nearly Fourier-limited pulses as short as 86 fs featuring a bandwidth of 53 nm were generated at a repetition rate of 76 MHz. A pulse energy of 1.1 nJ was achieved at 87 MHz for a pulse duration of 96 fs. The mode-locked Tm3+:MgWO4 laser exhibits excellent stability with a fundamental beat note extinction ratio of 80 dBc above noise level.

  3. Tunable Q-switched erbium doped fiber laser based on metal transition oxide saturable absorber and refractive index characteristic of multimode interference effects

    Science.gov (United States)

    Mohammed, D. Z.; Khaleel, Wurood Abdulkhaleq; Al-Janabi, A. H.

    2017-12-01

    Ferro-oxide (Fe3O4) nanoparticles were used as a saturable absorber (SA) for a passively Q-switched erbium doped fiber laser (EDFL) with ring cavity. The Q-switching operation was achieved at a pump threshold of 80 mW. The proposed fiber laser produces stable pulses train of repetition rate ranging from 25 kHz to 80 kHz as the pump power increases from threshold to 342 mW. The minimum recorded pulse width was 2.7 μs at 342 mW. The C-band tunability operation was performed using single mode-multimode-single mode fiber (SM-MM-SM) structure. The laser exhibited a total tuning range of 7 nm, maximum sensitivity of 106.9 nm, optical signal to noise ratio (OSNR) of 38 dB and 3-dB linewidth of 0.06 nm.

  4. Silica-coated gold nanorods as saturable absorber for bound-state pulse generation in a fiber laser with near-zero dispersion

    Science.gov (United States)

    Wang, Xude; Luo, Aiping; Luo, Zhichao; Liu, Meng; Zou, Feng; Zhu, Yanfang; Xue, Jianping; Xu, Wencheng

    2017-11-01

    We presented a bound-state operation in a fiber laser with near-zero anomalous dispersion based on a silica-coated gold nanorods (GNRs@SiO2) saturable absorber (SA). Using a balanced twin detector measurement technique, the modulation depth and nonsaturable loss of the GNRs@SiO2 SA were measured to be approximately 3.5% and 39.3%, respectively. By virtue of the highly nonlinear effect of the GNRs@SiO2 SA, the bound-state pulses could be easily observed. Besides the lower-order bound-state pulses with two, three, and four solitons, the higher-order bound states with up to 12 solitons were also obtained in the laser cavity. The pulse profiles of the higher-order bound states were further reconstructed theoretically. The experimental results would give further insight towards understanding the complex nonlinear dynamics of bound-state pulses in fiber lasers.

  5. Doubly Q-switched Nd:GGG laser with a few-layer MoS2 saturable absorber and an acousto-optic modulator

    Science.gov (United States)

    Wang, Di; Zhao, Jia; Yang, Kejian; Zhao, Shengzhi; Li, Tao; Li, Dechun; Li, Guiqiu; Qiao, Wenchao

    2017-10-01

    A doubly Q-switched Nd:GGG laser emitting 1064 nm wavelength with an acousto-optic modulator (AOM) and a few-layer MoS2 saturable absorber (SA) is presented to study the pulsed laser characteristics. The average output power, the pulse width, the pulse energy and the peak power versus pump power for different modulation frequency of AOM are measured. In comparison with singly passive Q-switched laser (SPQSL) with MoS2 SA, the doubly Q-switched laser (DQSL) can effectively shorten the pulse width, improve the pulse peak power and the stability. The shortest pulse width is 150.1 ns and the maximum peak power reaches 33.7 W. The maximum pulse compression ratio 5.8 and the highest peak power enhancement factor 21.3 are obtained, respectively.

  6. Bifurcation structure of cavity soliton dynamics in a vertical-cavity surface-emitting laser with a saturable absorber and time-delayed feedback

    Science.gov (United States)

    Schelte, Christian; Panajotov, Krassimir; Tlidi, Mustapha; Gurevich, Svetlana V.

    2017-08-01

    We consider a wide-aperture surface-emitting laser with a saturable absorber section subjected to time-delayed feedback. We adopt the mean-field approach assuming a single longitudinal mode operation of the solitary vertical-cavity surface-emitting laser (VCSEL). We investigate cavity soliton dynamics under the effect of time-delayed feedback in a self-imaging configuration where diffraction in the external cavity is negligible. Using bifurcation analysis, direct numerical simulations, and numerical path-continuation methods, we identify the possible bifurcations and map them in a plane of feedback parameters. We show that for both the homogeneous and localized stationary lasing solutions in one spatial dimension, the time-delayed feedback induces complex spatiotemporal dynamics, in particular a period doubling route to chaos, quasiperiodic oscillations, and multistability of the stationary solutions.

  7. Passively Q-switched Nd:YVO4/PPLN green laser with a few-layered MoS2 saturable absorber

    Science.gov (United States)

    Chang, Jianhua; Yang, Zhenbo; Li, Hanhan; Yang, Minhao

    2017-10-01

    We experimentally realized and demonstrated a solid-state, passively Q-switched Nd:YVO4/PPLN green laser with a saturable absorber (SA) based on few-layered MoS2. The MoS2 SA was fabricated by transferring MoS2 nanosheets onto a quartz substrate, and the obtained SA exhibited good transparency from the ultraviolet to near-infrared spectral regions. The modulation depth and the damage threshold of the MoS2 SA were measured to be 4.3% and 33.6 J/cm2, respectively. By inserting the MoS2 SA into a V-shaped laser resonant cavity, we achieved a stable Q-switched laser operation at 532.7 nm with a maximum average output power of 323 mW at the maximum absorbed pump power of 6.21 W that corresponded to a pulse duration of 320 ns, a repetition rate of 66.7 kHz, and a pulse energy of approximately 4.84 μJ. The experimental results validated the feasibility of MoS2 as a SA material and its promising applications in ultrafast lasers.

  8. Passively Q-switched Nd:YVO4/PPLN green laser with a few-layered MoS2 saturable absorber

    Science.gov (United States)

    Chang, Jianhua; Yang, Zhenbo; Li, Hanhan; Yang, Minhao

    2017-12-01

    We experimentally realized and demonstrated a solid-state, passively Q-switched Nd:YVO4/PPLN green laser with a saturable absorber (SA) based on few-layered MoS2. The MoS2 SA was fabricated by transferring MoS2 nanosheets onto a quartz substrate, and the obtained SA exhibited good transparency from the ultraviolet to near-infrared spectral regions. The modulation depth and the damage threshold of the MoS2 SA were measured to be 4.3% and 33.6 J/cm2, respectively. By inserting the MoS2 SA into a V-shaped laser resonant cavity, we achieved a stable Q-switched laser operation at 532.7 nm with a maximum average output power of 323 mW at the maximum absorbed pump power of 6.21 W that corresponded to a pulse duration of 320 ns, a repetition rate of 66.7 kHz, and a pulse energy of approximately 4.84 μJ. The experimental results validated the feasibility of MoS2 as a SA material and its promising applications in ultrafast lasers.

  9. Glass-ceramics with Co2+:Mg(Al,Ga)2O4 nanocrystals: novel saturable absorber for compact erbium lasers

    Science.gov (United States)

    Loiko, Pavel; Vitkin, Vladimir; Dymshits, Olga; Zhilin, Alexander; Alekseeva, Irina; Skoptsov, Nikolai; Malyarevich, Alexander; Mateos, Xavier; Yumashev, Konstantin

    2017-02-01

    We report on the passive Q-switching of a compact diode-side-pumped Er,Yb:glass laser by a novel saturable absorber (SA) based on transparent glass-ceramics (GC) containing Co2+Mg(Al,Ga)2O4 nanocrystals. To prepare the GC, an initial magnesium aluminosilicate glass doped with Ga2O3 containing 0.1 mol% CoO was synthesized by a conventional melt-quenching technique and heat-treated at 850-950 °C. The X-ray diffraction analysis of the GC confirmed the precipitation of Co2+Mg(Al,Ga)2O4 crystals with spinel structure (6-7 nm in size). Depending on the heat-treatment temperature, the saturation intensity for the GC measured at 1540 nm was in the 0.5...0.7 J/cm2 range and the recovery time was in the 240...335 ns range. Using the SA based on GC prepared by the heat-treatment at 950 °C with an initial transmission of 84.7%, we generated stable Q-switched pulses 1.14 mJ in energy and 7.2 ns in duration. The peak power reached 160 kW, the repetition rate was 1 Hz and the laser wavelength was 1535 nm. The developed GCs are promising for Q-switching of erbium lasers emitting at 1.5-1.7 μm.

  10. Single-wall carbon nanotubes and graphene oxide-based saturable absorbers for low phase noise mode-locked fiber lasers.

    Science.gov (United States)

    Li, Xiaohui; Wu, Kan; Sun, Zhipei; Meng, Bo; Wang, Yonggang; Wang, Yishan; Yu, Xuechao; Yu, Xia; Zhang, Ying; Shum, Perry Ping; Wang, Qi Jie

    2016-04-29

    Low phase noise mode-locked fiber laser finds important applications in telecommunication, ultrafast sciences, material science, and biology, etc. In this paper, two types of carbon nano-materials, i.e. single-wall carbon nanotube (SWNT) and graphene oxide (GO), are investigated as efficient saturable absorbers (SAs) to achieve low phase noise mode-locked fiber lasers. Various properties of these wall-paper SAs, such as saturable intensity, optical absorption and degree of purity, are found to be key factors determining the performance of the ultrafast pulses. Reduced-noise femtosecond fiber lasers based on such carbon-based SAs are experimentally demonstrated, for which the phase noise has been reduced by more than 10 dB for SWNT SAs and 8 dB for GO SAs at 10 kHz. To the best of our knowledge, this is the first investigation on the relationship between different carbon material based SAs and the phase noise of mode-locked lasers. This work paves the way to generate high-quality low phase noise ultrashort pulses in passively mode-locked fiber lasers.

  11. Large area growth of monolayer MoS2 film on quartz and its use as a saturable absorber in laser mode-locking

    Science.gov (United States)

    Zhao, Wei-fang; Yu, Hua; Liao, Meng-zhou; Zhang, Ling; Zou, Shu-zhen; Yu, Hai-juan; He, Chao-jian; Zhang, Jing-yuan; Zhang, Guang-yu; Lin, Xue-chun

    2017-02-01

    Monolayer MoS2 film on quartz was fabricated by a home-made three-temperature zone chemical vapor deposition method. The photo, AFM image, Raman spectroscopy and HRTEM image showed that high quality as-grown MoS2 film completely covered the whole quartz substrate of a few cm2. A Nd:YVO4 laser with mode-locking operation was obtained by using the monolayer MoS2 on quartz as the saturable absorber (SA). To the best of our knowledge, this is the first report on large-area growth of high quality monolayer MoS2 film on transparent quartz substrate, and the first time that the CVD MoS2 SA was used in mode-locked solid state lasers. Because of the large area, high transmission, low non-saturable loss and high optical damage threshold of this material, it is very suitable for application in mode-locked solid state lasers.

  12. Passive mode-locking at S-band by single-mode thulium-doped fluoride fiber using a thin film PtAg/N-G saturable absorber

    Science.gov (United States)

    Ahmad, Harith; Tajdidzadeh, Mojgan; Rezayi, Majid; Amiri, Iraj S.

    2017-04-01

    We report, for the first time to our knowledge, the usage of platinum silver bimetallic alloy forms on the synthesized N-Gns (PtAg/N-G) as a saturable absorber (SA) for the mode-locking of a thulium-doped fluoride fiber laser. The experimental results have demonstrated that PtAg/N-G exhibits saturable absorption in the 1.5-μm wavelength range and supports ultrashort pulse generation. Mode-locking occurred when the pump power rose to 340 mW, and the output spectrum had a peak at 1506 nm with the 3-dB bandwidth of ˜0.76 nm. The mode-locked pulse train against a cavity roundtrip time of 146 ns that corresponds to a pulse repetition rate around 6.85 MHz. The autocorrelation trace 7.43 ps with a full width at half maximum pulse width of 4.8 ps, and experimental data were closely fit with a sech2 pulse shape and it indicates the generation of soliton pulse. The output power of this fiber laser is 3.24 mW hence, the pulse energy is 0.31 nJ and peak power is about 56.9 mW as well. We demonstrate graphene-polymer nanocomposites could be an appropriate SA for high-power fiber laser mode-locking.

  13. Double Q-switch Ho:Sc2SiO5 laser by acousto-optic modulator combined with Cr2+:ZnSe saturable absorber

    Science.gov (United States)

    Yang, Xiao-tao; Zhang, Peng; Xie, Wen-qiang; Li, Lin-jun

    2018-01-01

    A double Q-switch (DQS) Ho:Sc2SiO5 laser modulated by a acousto-optic modulators (AOM) combined with a Cr2+:ZnSe saturable absorber (SA) was reported for the first time. The actively Q-switch (AQS) and passively Q-switch (PQS) were also studied. For the DQS mode, a maximum average output power of 2.49 W under the incident pump power of 12.5 W was obtained, corresponding to a slope efficiency of 24%. The characteristics of the DQS Ho:SSO laser versus different repetition frequencies (RF) of the AOM were researched. The maximum single-pulse energy of the DQS Ho:SSO laser was calculated to 1.98 mJ. The maximum peak power of the DQS Ho:SSO laser was 49.5 kW. The output beam quality factor M2 of DQS Ho:SSO laser was measured to be 1.15 with the highest peak power by knife-edge method at different positions.

  14. Quantum dot cadmium selenide as a saturable absorber for Q-switched and mode-locked double-clad ytterbium-doped fiber lasers

    Science.gov (United States)

    Mahyuddin, M. B. H.; Latiff, A. A.; Rusdi, M. F. M.; Irawati, N.; Harun, S. W.

    2017-08-01

    This paper demonstrates the integration of quantum dot (QD) cadmium selenide (CdSe) nanoparticles, which is embedded into polymethyl methacrylate (PMMA) film into an ytterbium-doped fiber laser (YDFL) cavity to produce Q-switched and mode-locked fiber lasers. The QD CdSe based film functions as a saturable absorber (SA). For Q-switching operation, stable pulse is generated within 970-1200 mW pump power, with tunable repetition rate and pulse width of 24.5-40.5 kHz and 6.8-3.7 μs, respectively. Maximum pulse energy and peak power are obtained about 1.1 μJ and 0.28 W, respectively. As we tune the polarization state of the laser cavity and use a single QD CdSe film, the mode-locking operation could also be generated within 310-468 mW pump power with repetition rate of 14.5 MHz and pulse width of 3.5 ps. Maximum pulse energy and peak power are obtained about 2 nJ and 0.11 W, respectively. These results may contribute to continuous research work on laser pulse generation, providing new opportunities of CdSe material in photonics applications.

  15. All-fiber Tm-doped soliton laser oscillator with 6 nJ pulse energy based on evanescent field interaction with monoloayer graphene saturable absorber.

    Science.gov (United States)

    Jeong, Hwanseong; Choi, Sun Young; Kim, Mi Hye; Rotermund, Fabian; Cha, Yong-Ho; Jeong, Do-Young; Lee, Sang Bae; Lee, Kwanil; Yeom, Dong-Il

    2016-06-27

    We demonstrate an all-fiber Tm-doped soliton laser with high power by using a monolayer graphene saturable absorber (SA). Large area, uniform monolayer graphene was transferred to the surface of the side-polished fiber (SPF) to realize an in-line graphene SA that operates around 2 μm wavelength. To increase the nonlinear interaction with graphene, we applied an over-cladding onto the SPF, where enhanced optical absorption at monolayer graphene was observed. All-fiber Tm-doped mode-locked laser was built including our in-line graphene SA, which stably delivered the soliton pulses with 773 fs pulse duration. The measured 3-dB spectral bandwidth was 5.14 nm at the wavelength of 1910 nm. We obtained the maximum average output power of 115 mW at a repetition rate of 19.31 MHz. Corresponding pulse energy was estimated to be 6 nJ, which is the highest value among all-fiber Tm-doped soliton oscillators using carbon-material-based SAs.

  16. All-fiber multi-wavelength passive Q-switched Er/Yb fiber laser based on a Tm-doped fiber saturable absorber

    Science.gov (United States)

    Posada-Ramírez, B.; Durán-Sánchez, M.; Álvarez-Tamayo, R. I.; Alaniz-Baylón, J.; Ibarra-Escamilla, B.; López-Estopier, R.; Kuzin, E. A.

    2017-03-01

    We report on a ring cavity, multi-wavelength, passive Q-switched erbium-ytterbium double cladding fiber laser based on the use of an unpumped segment of Tm-doped fiber acting as a saturable absorber for passive Q-switched pulse generation and a wavelength filter for multi-wavelength laser generation. By performing pump power variations from 1.6 to 9.8 W, stable Q-switched laser pulses are observed in a repetition rate from 135.8 to 27.5 kHz at room temperature. With a maximal repetition rate of 135.8 kHz, the minimum pulse duration of 430 ns is obtained. The maximal average output power of 2.2 W is reached with a pump power of 9.8 W. The maximum pulse energy was 16.4 µJ and the average output power slope efficiency is ~24.8%. The obtained results demonstrate a laser performance with extended range of high repetition rate and improved stability.

  17. Passively synchronized Q-switched and mode-locked dual-band Tm3+:ZBLAN fiber lasers using a common graphene saturable absorber

    Science.gov (United States)

    Jia, Chenglai; Shastri, Bhavin J.; Abdukerim, Nurmemet; Rochette, Martin; Prucnal, Paul R.; Saad, Mohammed; Chen, Lawrence R.

    2016-11-01

    Dual-band fiber lasers are emerging as a promising technology to penetrate new industrial and medical applications from their dual-band properties, in addition to providing compactness and environmental robustness from the waveguide structure. Here, we demonstrate the use of a common graphene saturable absorber and a single gain medium (Tm3+:ZBLAN fiber) to implement (1) a dual-band fiber ring laser with synchronized Q-switched pulses at wavelengths of 1480 nm and 1840 nm, and (2) a dual-band fiber linear laser with synchronized mode-locked pulses at wavelengths of 1480 nm and 1845 nm. Q-switched operation at 1480 nm and 1840 nm is achieved with a synchronized repetition rate from 20 kHz to 40.5 kHz. For synchronous mode-locked operation, pulses with full-width at half maximum durations of 610 fs and 1.68 ps at wavelengths of 1480 nm and 1845 nm, respectively, are obtained at a repetition rate of 12.3 MHz. These dual-band pulsed sources with an ultra-broadband wavelength separation of ~360 nm will add new capabilities in applications including optical sensing, spectroscopy, and communications.

  18. Q-switched erbium doped fiber laser using antimony telluride-polyvinyl alcohol (Sb2Te3-PVA) as saturable absorber

    Science.gov (United States)

    Quisar Lokman, Muhammad; Ahmad, Fauzan; Wadi Harun, Sulaiman

    2017-11-01

    Q-switched erbium doped fiber laser was demonstrated using antimony telluride (Sb2Te3) as saturable absorber (SA). The SA was fabricated by adding Sb3Te2 powder into PVA suspension and left dry in room temperature for two days. Then, the SA was sandwiched in between two FC/PC fiber ferrules, which can provide easy integration and flexibility into the laser cavity. Stable and self-started Q-switched laser operates at 1531 nm center wavelength. The laser repetition rate increased from 54.5 kHz to 88.4 kHz and pulse duration decreased from 6.84 μs to 4.58 μs as the pump power increased. A signal to noise ratio value of 55 dB was achieved at pump power 130 mW. At the maximum pump power, the average output power and pulse energy are 0.26 mW and 2.78 nJ.

  19. Generation of soliton and bound soliton pulses in mode-locked erbium-doped fiber laser using graphene film as saturable absorber

    Science.gov (United States)

    Haris, H.; Harun, S. W.; Anyi, C. L.; Muhammad, A. R.; Ahmad, F.; Tan, S. J.; Nor, R. M.; Zulkepely, N. R.; Ali, N. M.; Arof, H.

    2016-04-01

    We report an observation of soliton and bound-state soliton in passive mode-locked fibre laser employing graphene film as a passive saturable absorber (SA). The SA was fabricated from the graphene flakes, which were obtained from electrochemical exfoliation process. The graphene flakes was mixed with polyethylene oxide solution to form a polymer composite, which was then dried at room temperature to produce a film. The film was then integrated in a laser cavity by attaching it to the end of a fibre ferrule with the aid of index matching gel. The fibre laser generated soliton pulses with a 20.7 MHz repetition rate, 0.88 ps pulse width, 0.0158 mW average output power, 0.175 pJ pulse energy and 18.72 W peak power at the wavelength of 1564 nm. A bound soliton with pulse duration of ~1.04 ps was also obtained at the pump power of 110.85 mW by carefully adjusting the polarization of the oscillating laser. The formation of bound soliton is due to the direct pulse to pulse interaction. The results show that the proposed graphene-based SA offers a simple and cost efficient approach of generating soliton and bound soliton in mode-locked EDFL set-up.

  20. Mid-infrared ultra-short mode-locked fiber laser utilizing topological insulator Bi2Te3 nano-sheets as the saturable absorber

    CERN Document Server

    Yin, Ke; Zheng, Xin; Yu, Hao; Cheng, Xiangai; Hou, Jing

    2015-01-01

    The newly-emergent two-dimensional topological insulators (TIs) have shown their unique electronic and optical properties, such as good thermal management, high nonlinear refraction index and ultrafast relaxation time. Their narrow energy band gaps predict their optical absorption ability further into the mid-infrared region and their possibility to be very broadband light modulators ranging from the visible to the mid-infrared region. In this paper, a mid-infrared mode-locked fluoride fiber laser with TI Bi2Te3 nano-sheets as the saturable absorber is presented. Continuous wave lasing, Q-switched and continuous-wave mode-locking (CW-ML) operations of the laser are observed sequentially by increasing the pump power. The observed CW-ML pulse train has a pulse repetition rate of 10.4 MHz, a pulse width of ~6 ps, and a center wavelength of 2830 nm. The maximum achievable pulse energy is 8.6 nJ with average power up to 90 mW. This work forcefully demonstrates the promising applications of two-dimensional TIs for ...

  1. All-fiber dual-wavelength Q-switched and mode-locked EDFL by SMF-THDF-SMF structure as a saturable absorber

    Science.gov (United States)

    Latiff, A. A.; Kadir, N. A.; Ismail, E. I.; Shamsuddin, H.; Ahmad, H.; Harun, S. W.

    2017-04-01

    We demonstrate all-fiber dual-wavelength Q-switched and mode-locked erbium-doped fiber laser (EDFL) by utilizing the thulium-holmium-doped fiber (THDF) as a fiber saturable absorber (SA) and also a Mach-Zehnder interferometer (MZI) element. The 19 cm long THDF has a core diameter of 11.5 μm, refractive index difference of 0.005, and cutoff wavelength of 1810 nm. Stable dual-wavelength Q-switching operation was generated at 1555.14 nm and 1557.64 nm with free spectral range (FSR) of 2.5 nm. The repetition rate of 14.45-78.49 kHz was obtained between 12 and 100 mW pump power. At maximum pump power, the maximum output power and pulse energy were 2.58 mW and 32.87 nJ, respectively. By adding 195 cm long SMF in the same cavity, the stable dual-wavelength mode-locking operation was started at 166 mW and continue stable to 201 mW pump power. This mode-locking operation produced stable dual-wavelength pulses at 1530.34 nm and 1532.84 nm with a repetition rate of 1 MHz with a pulse duration of 128 ns and signal-to-noise ratio (SNR) of 62 dB. It shares the same value of FSR in Q-switching operation. The highest output power of 1.57 nJ corresponds to the maximum output power of 1.57 mW was obtained. Our results validate the linear absorption characteristic at C-band region and multimode fiber effect of THDF can be utilized as SA to generate stable all-fiber dual-wavelength pulsed lasers. Remarkably, these findings expand a fiber gain medium application in short pulse generation.

  2. Synthesis and characterization of visible light absorbing (GaN)(1-x)(ZnO)x semiconductor nanorods.

    Science.gov (United States)

    Reinert, Alexandra A; Payne, Candace; Wang, Limin; Ciston, James; Zhu, Yimei; Khalifah, Peter G

    2013-08-05

    Although the (GaN)(1-x)(ZnO)x solid solution is one of the most effective systems for driving overall solar water splitting with visible light, its quantum yield for overall water splitting using visible light photons has not yet reached ten percent. Understanding and controlling the nanoscale morphology of this system may allow its overall conversion efficiency to be raised to technologically relevant levels. We describe the use a Ga2O3(ZnO)16 precursor phase in the synthesis of this phase which naturally results in the production of arrays of nanorods with favorable diameters (∼100 nm) and band gaps (∼2.5 eV). Substantial absorption within the band gap is observed, part of which is found to follow the E(-3) scaling characteristic of free carriers scattered by ionized impurity sites. Compositional analysis suggests that a substantial quantity of cation vacancies (∼3%) may be present in some samples. The typical nanorod growth direction and dominant {1011} facet for powders in this system have been identified through electron microscopy methods, leading to the conclusion that polarity may play an important role in the high photoactivity of this family of wurtzite semiconductors.

  3. Properties of the ferroelectric visible light absorbing semiconductors: Sn2P2S6 and Sn2P2Se6

    Science.gov (United States)

    Li, Yuwei; Singh, David J.

    2017-12-01

    Ferroelectrics with suitable band gaps have recently attracted attention as candidate solar absorbing materials for photovoltaics. The inversion symmetry breaking may promote the separation of photoexcited carriers and allow voltages higher than the band gap. However, these effects are not fully understood, in part because of a lack of suitable model systems for studying these effects in detail. Here, we report properties of ferroelectric Sn2P2S6 and Sn2P2Se6 using first principles calculations. Results are given for the electronic structure, carrier pocket shapes, optical absorption, and transport. We find indirect band gaps of 2.20 eV and 1.55 eV, respectively, and favorable band structures for carrier transport, including both holes and electrons. Strong absorption is found above the direct gaps of 2.43 eV and 1.76 eV. Thus these compounds may serve as useful model systems for understanding photovoltaic effects in ferroelectric semiconductors.

  4. Radio Frequency and Terahertz Signals Generated by Passively Mode-Locked Semiconductor Lasers

    OpenAIRE

    Latkowski, Sylwester

    2010-01-01

    There are several different approaches to generating periodic signals using semiconductor lasers, for example: Q-switching, gain switching or mode-locking schemes. In general the active or passive mode-locking techniques require the use of a modulator or a saturable absorber in order to achieve the phase synchronisation. The laser diodes studied in this thesis, are demonstrated to operate in the mode-locked regime, while not requiring any direct or external modulation, nor the saturable absor...

  5. Low-repetition-rate, all-polarization-maintaining Yb-doped fiber laser mode-locked by a semiconductor saturable absorber

    Science.gov (United States)

    Xiao, Xiao-Sheng

    2017-10-01

    Not Available Project supported by the Initiative Research Program of State Key Laboratory of Precision Measurement Technology and Instruments, China and the National Natural Science Foundation of China (Grant No. 51527901).

  6. Tunable and Switchable Narrow Bandwidth Semiconductor-Saturable Absorber Mirror Mode-Locked Yb-Doped Fiber Laser Delivering Different Pulse Widths

    Science.gov (United States)

    Zhao-Kun, Wang; Feng, Zou; Zi-Wei, Wang; Song-Tao, Du; Jun, Zhou

    2016-03-01

    Not Available Supported by the National High Technology Research and Development Program of China under Grant No 2014AA041901, NSAF Foundation of the National Natural Science Foundation of China under Grant No U1330134, the Opening Project of Shanghai Key Laboratory of All Solid-State Laser and Applied Techniques under Grant No 2012ADL02, and the National Natural Science Foundation of China under Grant Nos 61308024 and 11174305.

  7. Ultrafast nonlinear optical properties of thin-solid DNA film and their application as a saturable absorber in femtosecond mode-locked fiber laser.

    Science.gov (United States)

    Khazaeinezhad, Reza; Hosseinzadeh Kassani, Sahar; Paulson, Bjorn; Jeong, Hwanseong; Gwak, Jiyoon; Rotermund, Fabian; Yeom, Dong-Il; Oh, Kyunghwan

    2017-01-27

    A new extraordinary application of deoxyribonucleic acid (DNA) thin-solid-film was experimentally explored in the field of ultrafast nonlinear photonics. Optical transmission was investigated in both linear and nonlinear regimes for two types of DNA thin-solid-films made from DNA in aqueous solution and DNA-cetyltrimethylammonium chloride (CTMA) in an organic solvent. Z-scan measurements revealed a high third-order nonlinearity with n2 exceeding 10-9 at a wavelength of 1570 nm, for a nonlinarity about five orders of magnitude larger than that of silica. We also demonstrated ultrafast saturable absorption (SA) with a modulation depth of 0.43%. DNA thin solid films were successfully deposited on a side-polished optical fiber, providing an efficient evanescent wave interaction. We built an organic-inorganic hybrid all-fiber ring laser using DNA film as an ultrafast SA and using Erbium-doped fiber as an efficient optical gain medium. Stable transform-limited femtosecond soliton pulses were generated with full width half maxima of 417 fs for DNA and 323 fs for DNA-CTMA thin-solid-film SAs. The average output power was 4.20 mW for DNA and 5.46 mW for DNA-CTMA. Detailed conditions for DNA solid film preparation, dispersion control in the laser cavity and subsequent characteristics of soliton pulses are discussed, to confirm unique nonlinear optical applications of DNA thin-solid-film.

  8. Crystallization and nonlinear optical properties of transparent glass-ceramics with Co:Mg(Al,Ga)2O4 nanocrystals for saturable absorbers of lasers at 1.6-1.7 μm

    Science.gov (United States)

    Loiko, P. A.; Dymshits, O. S.; Skoptsov, N. A.; Malyarevich, A. M.; Zhilin, A. A.; Alekseeva, I. P.; Tsenter, M. Y.; Bogdanov, K. V.; Mateos, X.; Yumashev, K. V.

    2017-04-01

    Transparent glass-ceramics (GCs) containing nanocrystals of Co:Mg(Al,Ga)2O4 spinel and Co:magnesium gallium aluminotitanate solid solutions are synthesized by secondary heat-treatments of the magnesium aluminosilicate glass nucleated by TiO2 and doped with Ga2O3 and CoO. Optical spectroscopy confirms that Co2+ ions located in the initial glass in octahedral and tetrahedral positions, enter the Mg(Al,Ga)2O4 nanocrystals predominantly in tetrahedral sites and the fraction of tetrahedrally coordinated ions increases gradually with the heat-treatment temperature. The feature of these GCs is a long-wavelength shift of the absorption band related to the 4A2(4F)→4T1(4F) transition of Co2+ ions (up to 1.67 μm) as compared with that for Co:MgAl2O4 single crystals. An increase of the heat-treatment temperature from 800 to 950 °C leading to an increase of the fraction and size of spinel crystals allowed increasing the peak absorption within this band while keeping the saturation intensity within the range 0.5…0.7 J/cm2 and the recovery time in the range 240…335 ns. The developed GCs are promising as saturable absorbers for erbium lasers emitting at 1.6-1.7 μm.

  9. Ultrafast nonlinear optical properties of thin-solid DNA film and their application as a saturable absorber in femtosecond mode-locked fiber laser

    Science.gov (United States)

    Khazaeinezhad, Reza; Hosseinzadeh Kassani, Sahar; Paulson, Bjorn; Jeong, Hwanseong; Gwak, Jiyoon; Rotermund, Fabian; Yeom, Dong-Il; Oh, Kyunghwan

    2017-01-01

    A new extraordinary application of deoxyribonucleic acid (DNA) thin-solid-film was experimentally explored in the field of ultrafast nonlinear photonics. Optical transmission was investigated in both linear and nonlinear regimes for two types of DNA thin-solid-films made from DNA in aqueous solution and DNA-cetyltrimethylammonium chloride (CTMA) in an organic solvent. Z-scan measurements revealed a high third-order nonlinearity with n2 exceeding 10−9 at a wavelength of 1570 nm, for a nonlinarity about five orders of magnitude larger than that of silica. We also demonstrated ultrafast saturable absorption (SA) with a modulation depth of 0.43%. DNA thin solid films were successfully deposited on a side-polished optical fiber, providing an efficient evanescent wave interaction. We built an organic-inorganic hybrid all-fiber ring laser using DNA film as an ultrafast SA and using Erbium-doped fiber as an efficient optical gain medium. Stable transform-limited femtosecond soliton pulses were generated with full width half maxima of 417 fs for DNA and 323 fs for DNA-CTMA thin-solid-film SAs. The average output power was 4.20 mW for DNA and 5.46 mW for DNA-CTMA. Detailed conditions for DNA solid film preparation, dispersion control in the laser cavity and subsequent characteristics of soliton pulses are discussed, to confirm unique nonlinear optical applications of DNA thin-solid-film. PMID:28128340

  10. Model of mode-locked quantum-well semiconductor laser based on InGaAs/InGaAlAs/InP heterostructure

    Science.gov (United States)

    Rybalko, D. A.; Polukhin, I. S.; Solov'ev, Y. V.; Mikhailovskiy, G. A.; Odnoblyudov, M. A.; Gubenko, A. E.; Livshits, D. A.; Firsov, A. N.; Kirsyaev, A. N.; Efremov, A. A.; Bougrov, V. E.

    2016-08-01

    We propose a model for operation of mode-locked (ML) quantum-well semiconductor laser consisting of a reverse biased saturable absorber and a forward biased amplifying section. To describe the dynamics of this laser we use the traveling wave model. Numerical simulations performed for the InGaAs/InGaAlAs laser structure emitting at 1,55 um.

  11. Optical Regeneration and Noise in Semiconductor Devices

    DEFF Research Database (Denmark)

    Öhman, Filip

    2005-01-01

    In this report all-optical 2R-regeneration in optical communication systems is investigated. A simple regenerator device based on concatenated semiconductor optical amplifiers (SOAs) and electro absorbers (EAs) is introduced and examined. Experiments show that the monolithic SOA-EA 2R-regenerator......In this report all-optical 2R-regeneration in optical communication systems is investigated. A simple regenerator device based on concatenated semiconductor optical amplifiers (SOAs) and electro absorbers (EAs) is introduced and examined. Experiments show that the monolithic SOA-EA 2R...... sensitivity with more than 8 dB compared to the back-to-back case, using a degraded signal. The noise properties and cascadability of the proposed device are examined through modeling. Furthermore the influence of the saturation properties of the EA on the regeneration performance is investigated....... Calculations show that it is possible to increase the nonlinearity of the transfer function and improve the regenerating properties by lowering the saturation power of the EA and concatenating several SOA-EA pairs, although this also adds more noise to the signal. In order to analyze the influence...

  12. Intra-cavity frequency-doubled mode-locked semiconductor disk laser at 325 nm.

    Science.gov (United States)

    Bek, Roman; Baumgärtner, Stefan; Sauter, Fabian; Kahle, Hermann; Schwarzbäck, Thomas; Jetter, Michael; Michler, Peter

    2015-07-27

    We present a passively mode-locked semiconductor disk laser (SDL) emitting at 650nm with intra-cavity second harmonic generation to the ultraviolet (UV) spectral range. Both the gain and the absorber structure contain InP quantum dots (QDs) as active material. In a v-shaped cavity using the semiconductor samples as end mirrors, a beta barium borate (BBO) crystal is placed in front of the semiconductor saturable absorber mirror (SESAM) for pulsed UV laser emission in one of the two outcoupled beams. Autocorrelation (AC) measurements at the fundamental wavelength reveal a FWHM pulse duration of 1.22ps. With a repetition frequency of 836MHz, the average output power is 10mW per beam for the red emission and 0.5mW at 325nm.

  13. High-power Cr2+:ZnS saturable absorber passively Q-switched Ho:YAG ceramic laser and its application to pumping of a mid-IR OPO.

    Science.gov (United States)

    Yao, Baoquan; Yuan, Jinhe; Li, Jiang; Dai, Tongyu; Duan, Xiaoming; Shen, Yingjie; Cui, Zheng; Pan, Yubai

    2015-02-01

    We used the Cr2+:ZnS as a saturable absorber to obtain a passively Q-switched Ho:YAG ceramic laser operating near 2.1 μm. The maximum average output power of 14.8 W and a shortest pulse width of 29 ns were obtained, and to our knowledge, this is the best report for the PQS Ho:YAG ceramic laser. A maximum energy per pulse of 0.6 mJ with a maximum pulse repetition frequency of 24.4 kHz was achieved, which corresponded to a peak power of 20 kW. We first used the PQS laser as the pump source of optical parametric oscillator to obtain the mid-infrared laser. A maximum average output power of 4.4 W was achieved from the ZnGeP2 parametric oscillator, corresponding to a slope efficiency of 49.5% with respect to the incident pump power.

  14. FY1995 research on nonlinear optical devices using super-lattice semiconductors; 1995 nendo chokoshi active hisenkei soshi wo mochiita chokosoku hikari seigyo gijutsu no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    The purpose is to develop technologies on efficient generation and control of femtosecond optical pulses using a novel semiconductor optical devices. We studied a modelocked Cr:forsterite laser pumped by a diode pumped Nd:YVO4 laser. Both Kerr lens mode locking and semi-conductor saturable absorber initiated mode locking have been achieved. The minimum pulse width for pure Kerr lens mode locking is 26.4 fs, while for the semiconductor saturable absorber initiated mode locking, the pulse width is 36 fs. The latter is very resistant to the environment perturbations. We also present the measured dispersion data for the forsterite crystal and the SESAM, and discuss the dispersion compensation technique. (NEDO)

  15. Digital Alloy Absorber for Photodetectors

    Science.gov (United States)

    Hill, Cory J. (Inventor); Ting, David Z. (Inventor); Gunapala, Sarath D. (Inventor)

    2016-01-01

    In order to increase the spectral response range and improve the mobility of the photo-generated carriers (e.g. in an nBn photodetector), a digital alloy absorber may be employed by embedding one (or fraction thereof) to several monolayers of a semiconductor material (insert layers) periodically into a different host semiconductor material of the absorber layer. The semiconductor material of the insert layer and the host semiconductor materials may have lattice constants that are substantially mismatched. For example, this may performed by periodically embedding monolayers of InSb into an InAsSb host as the absorption region to extend the cutoff wavelength of InAsSb photodetectors, such as InAsSb based nBn devices. The described technique allows for simultaneous control of alloy composition and net strain, which are both key parameters for the photodetector operation.

  16. Large-area broadband saturable Bragg reflectors by use of oxidized AlAs.

    Science.gov (United States)

    Tandon, S N; Gopinath, J T; Shen, H M; Petrich, G S; Kolodziejski, L A; Kärtner, F X; Ippen, E P

    2004-11-01

    Broadband saturable Bragg reflectors (SBRs) are designed and fabricated by monolithic integration of semiconductor saturable absorbers with broadband Bragg mirrors. The wet oxidation of AlAs creates low-index AlxOy layers for broadband, high-index-contrast AlGaAs/AlxOy or InGaAlP/AlxOy mirrors. SBR mirror designs indicate greater than 99% reflectivity over bandwidths of 294, 466, and 563 nm for center wavelengths of 800, 1300, and 1550 nm, respectively. Highly strained and unstrained absorbers are stably integrated with the oxidized mirrors. Large-scale lateral oxidation techniques permit the fabrication of SBRs with diameters of 500 microm. Large-area, broadband SBRs are used to self-start and mode lock a variety of laser systems at wavelengths from 800 to 1550 nm.

  17. Perovskite semiconductor La(Ni{sub 0.75}W{sub 0.25})O{sub 3} nanoparticles for visible-light-absorbing photocatalytic material

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Lei; Xie, Hongde, E-mail: xiehongde@suda.edu.cn; Pu, Yinfu; Huang, Yanlin [Soochow University, State and Local Joint Engineering Laboratory for Novel Functional Polymeric Materials, College of Chemistry, Chemical Engineering and Materials Science (China); Qin, Lin; Seo, Hyo Jin, E-mail: hjseo@pknu.ac.kr [Pukyong National University, Department of Physics and Interdisciplinary Program of Biomedical, Mechanical & Electrical Engineering (Korea, Republic of)

    2017-01-15

    La(Ni{sub 0.75}W{sub 0.25})O{sub 3} perovskite oxide was prepared via the sol–gel Pechini route. The pure crystalline phase was verified via X-ray diffraction measurements and Rietveld structure refinements. Some measurements were applied to characterize the surface of the nanoparticles such as transmission electron microscopy, scanning electron microscope, energy-dispersive X-ray spectroscopy, specific surface area, and X-ray photo-electron spectroscopy measurements. The optical measurement confirmed that this perovskite oxide can absorb the visible light presenting low band energy of 2.41 eV. The d–d allowed transitions in Ni{sup 2+}-O octahedral have great contributions to the narrow band-gap. The Ni{sup 2+}-containing perovskite was applied as a photocatalyst showing the desirable photodegradation ability for methylene blue solutions under the excitation of visible-light. The photocatalysis activities were discussed in the relationship with its special perovskite-type structure such as the NiO{sub 6} color centers and multivalent cation ions etc.

  18. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  19. High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power.

    Science.gov (United States)

    Rudin, B; Wittwer, V J; Maas, D J H C; Hoffmann, M; Sieber, O D; Barbarin, Y; Golling, M; Südmeyer, T; Keller, U

    2010-12-20

    High-power ultrafast lasers are important for numerous industrial and scientific applications. Current multi-watt systems, however, are based on relatively complex laser concepts, for example using additional intracavity elements for pulse formation. Moving towards a higher level of integration would reduce complexity, packaging, and manufacturing cost, which are important requirements for mass production. Semiconductor lasers are well established for such applications, and optically-pumped vertical external cavity surface emitting lasers (VECSELs) are most promising for higher power applications, generating the highest power in fundamental transverse mode (>20 W) to date. Ultrashort pulses have been demonstrated using passive modelocking with a semiconductor saturable absorber mirror (SESAM), achieving for example 2.1-W average power, sub-100-fs pulse duration, and 50-GHz pulse repetition rate. Previously the integration of both the gain and absorber elements into a single wafer was demonstrated with the MIXSEL (modelocked integrated external-cavity surface emitting laser) but with limited average output power (power scaling concept of the MIXSEL using optimized quantum dot saturable absorbers in an antiresonant structure design combined with an improved thermal management by wafer removal and mounting of the 8-µm thick MIXSEL structure directly onto a CVD-diamond heat spreader. The simple straight cavity with only two components has generated 28-ps pulses at 2.5-GHz repetition rate and an average output power of 6.4 W, which is higher than for any other modelocked semiconductor laser.

  20. Self-mode-locking semiconductor disk laser.

    Science.gov (United States)

    Gaafar, Mahmoud; Richter, Philipp; Keskin, Hakan; Möller, Christoph; Wichmann, Matthias; Stolz, Wolfgang; Rahimi-Iman, Arash; Koch, Martin

    2014-11-17

    The development of mode-locked semiconductor disk lasers received striking attention in the last 14 years and there is still a vast potential of such pulsed lasers to be explored and exploited. While for more than one decade pulsed operation was strongly linked to the employment of a saturable absorber, self-mode-locking emerged recently as an effective and novel technique in this field - giving prospect to a reduced complexity and improved cost-efficiency of such lasers. In this work, we highlight recent achievements regarding self-mode-locked semiconductor devices. It is worth to note, that although nonlinear effects in the active medium are expected to give rise to self-mode-locking, this has to be investigated with care in future experiments. However, there is a controversy whether results presented with respect to self-mode-locking truly show mode-locking. Such concerns are addressed in this work and we provide a clear evidence of mode-locking in a saturable-absorber-free device. By using a BBO crystal outside the cavity, green light originating from second-harmonic generation using the out-coupled laser beam is demonstrated. In addition, long-time-span pulse trains as well as radiofrequency-spectra measurements are presented for our sub-ps pulses at 500 MHz repetition rate which indicate the stable pulse operation of our device. Furthermore, a long-time-span autocorrelation trace is introduced which clearly shows absence of a pedestal or double pulses. Eventually, a beam-profile measurement reveals the excellent beam quality of our device with an M-square factor of less than 1.1 for both axes, showing that self-mode-locking can be achieved for the fundamental transverse mode.

  1. Semiconductor physics

    Energy Technology Data Exchange (ETDEWEB)

    Tuchkevich, V.M.; Frenkel, V.Y.

    1986-01-01

    This text is a collection of papers devoted mainly to the results of the research work in the field of semiconductors. Topics include photovoltaic solar energy conversion, interacting excitons in germanium and silicon, chalcogenide vitreous semiconductors, optical cooling of the nuclear spin system in a semiconductor, photon drag of electrons in semiconductors, dielectric losses in crystals, light scattering from heavily doped semiconductors, and the capacity of an abrupt asymmetric p-n junction.

  2. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  3. Exchanging Ohmic losses in metamaterial absorbers with useful optical absorption for photovoltaics.

    Science.gov (United States)

    Vora, Ankit; Gwamuri, Jephias; Pala, Nezih; Kulkarni, Anand; Pearce, Joshua M; Güney, Durdu Ö

    2014-05-09

    Using metamaterial absorbers, we have shown that metallic layers in the absorbers do not necessarily constitute undesired resistive heating problem for photovoltaics. Tailoring the geometric skin depth of metals and employing the natural bulk absorbance characteristics of the semiconductors in those absorbers can enable the exchange of undesired resistive losses with the useful optical absorbance in the active semiconductors. Thus, Ohmic loss dominated metamaterial absorbers can be converted into photovoltaic near-perfect absorbers with the advantage of harvesting the full potential of light management offered by the metamaterial absorbers. Based on experimental permittivity data for indium gallium nitride, we have shown that between 75%-95% absorbance can be achieved in the semiconductor layers of the converted metamaterial absorbers. Besides other metamaterial and plasmonic devices, our results may also apply to photodectors and other metal or semiconductor based optical devices where resistive losses and power consumption are important pertaining to the device performance.

  4. Exchanging Ohmic Losses in Metamaterial Absorbers with Useful Optical Absorption for Photovoltaics

    Science.gov (United States)

    Vora, Ankit; Gwamuri, Jephias; Pala, Nezih; Kulkarni, Anand; Pearce, Joshua M.; Güney, Durdu Ö.

    2014-01-01

    Using metamaterial absorbers, we have shown that metallic layers in the absorbers do not necessarily constitute undesired resistive heating problem for photovoltaics. Tailoring the geometric skin depth of metals and employing the natural bulk absorbance characteristics of the semiconductors in those absorbers can enable the exchange of undesired resistive losses with the useful optical absorbance in the active semiconductors. Thus, Ohmic loss dominated metamaterial absorbers can be converted into photovoltaic near-perfect absorbers with the advantage of harvesting the full potential of light management offered by the metamaterial absorbers. Based on experimental permittivity data for indium gallium nitride, we have shown that between 75%–95% absorbance can be achieved in the semiconductor layers of the converted metamaterial absorbers. Besides other metamaterial and plasmonic devices, our results may also apply to photodectors and other metal or semiconductor based optical devices where resistive losses and power consumption are important pertaining to the device performance. PMID:24811322

  5. Sound Absorbers

    Science.gov (United States)

    Fuchs, H. V.; Möser, M.

    Sound absorption indicates the transformation of sound energy into heat. It is, for instance, employed to design the acoustics in rooms. The noise emitted by machinery and plants shall be reduced before arriving at a workplace; auditoria such as lecture rooms or concert halls require a certain reverberation time. Such design goals are realised by installing absorbing components at the walls with well-defined absorption characteristics, which are adjusted for corresponding demands. Sound absorbers also play an important role in acoustic capsules, ducts and screens to avoid sound immission from noise intensive environments into the neighbourhood.

  6. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  7. Self-starting mode locking in a Cr:forsterite laser by use of non-epitaxially-grown semiconductor-doped silica films.

    Science.gov (United States)

    Prasankumar, R P; Chudoba, C; Fujimoto, J G; Mak, P; Ruane, M F

    2002-09-01

    We demonstrate RF sputtered, non-epitaxially-grown semiconductor nanocrystallite-doped silica films for mode locking a Cr:forsterite laser. We controlled the size and the optical properties of the nanocrystallites by varying the ratio of InAs to SiO(2) during fabrication. Femtosecond pump-probe measurements were performed to characterize the nonlinear optical properties of these films, revealing their lower saturation fluences. Using the InAs-doped silica films as saturable absorbers permitted self-starting Kerr-lens mode locking (KLM), generating pulses of 25-fs duration with 91-nm spectral bandwidth at 1.3 microm . We also describe saturable-absorber mode-locked operation without KLM and investigate its dependence on intracavity dispersion.

  8. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  9. Analysis of timing jitter in external-cavity mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper

    2006-01-01

    We develop a comprehensive theoretical description of passive mode-locking in external-cavity mode-locked semiconductor lasers based on a fully distributed time-domain approach. The model accounts for the dispersion of both gain and refractive index, nonlinear gain saturation from ultrafast...... to investigate the performance of a MQW buried heterostructure laser. Results from numerical simulations show that the optimum driving conditions for achieving the shortest pulses with minimum timing jitter occur for large reverse bias in the absorber section at an optimum optical bandwidth limited by Gordon...

  10. All-optical mitigation of amplitude and phase-shift drift noise in semiconductor optical amplifiers

    Science.gov (United States)

    Rocha, Peterson; Gallep, Cristiano M.; Conforti, Evandro

    2015-10-01

    An all-optical scheme aimed at minimizing distortions induced by semiconductor optical amplifiers (SOAs) over modulated optical carriers is presented. The scheme employs an additional SOA properly biased to act as a saturated absorber, and thus counteract the distortions induced by the first amplifying device. The scheme here is demonstrated in silico, for 40 and 100 Gb/s (10 and 25 Gbaud, 16 QAM), with reasonable total gain (>20 dB) for symbol error rate below the forward error correction limit.

  11. Energy absorber

    Energy Technology Data Exchange (ETDEWEB)

    Heyen, J.

    1980-03-04

    The collection of solar energy, radiated onto roofs, is the goal of this invention, to supply a heating system. The invention is based on the utilization of sealing webs. The prefered material for such energy absorbers is ethylen-copolymer-bitumen. Two each of the bitumen sheets are bonded together to form a bag flown through bag the heat transfer medium. The bag simultaneously serves for roof sealing.

  12. Slow Light at High Frequencies in an Amplifying Semiconductor Waveguide

    DEFF Research Database (Denmark)

    Öhman, Filip; Yvind, Kresten; Mørk, Jesper

    2006-01-01

    We demonstrate slow-down of a modulated light signal in a semiconductor waveguide. Concatenated amplifying and absorbing sections simultaneously achieve both amplification and a controllable time delay at 15 GHz.......We demonstrate slow-down of a modulated light signal in a semiconductor waveguide. Concatenated amplifying and absorbing sections simultaneously achieve both amplification and a controllable time delay at 15 GHz....

  13. Terahertz Nonlinear Optics in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...

  14. Nonlinear Gain Saturation in Active Slow Light Photonic Crystal Waveguides

    DEFF Research Database (Denmark)

    Chen, Yaohui; Mørk, Jesper

    2013-01-01

    We present a quantitative three-dimensional analysis of slow-light enhanced traveling wave amplification in an active semiconductor photonic crystal waveguides. The impact of slow-light propagation on the nonlinear gain saturation of the device is investigated.......We present a quantitative three-dimensional analysis of slow-light enhanced traveling wave amplification in an active semiconductor photonic crystal waveguides. The impact of slow-light propagation on the nonlinear gain saturation of the device is investigated....

  15. Simulation of Nonlinear Gain Saturation in Active Photonic Crystal Waveguides

    DEFF Research Database (Denmark)

    Chen, Yaohui; Mørk, Jesper

    2012-01-01

    In this paper we present a theoretical analysis of slowlight enhanced traveling wave amplification in an active semiconductor Photonic crystal waveguides. The impact of group index on nonlinear modal gain saturation is investigated.......In this paper we present a theoretical analysis of slowlight enhanced traveling wave amplification in an active semiconductor Photonic crystal waveguides. The impact of group index on nonlinear modal gain saturation is investigated....

  16. Ultrafast non-equilibrium carrier dynamics in semiconductor laser mode-locking

    Science.gov (United States)

    Hader, J.; Scheller, M.; Laurain, A.; Kilen, I.; Baker, C.; Moloney, J. V.; Koch, S. W.

    2017-01-01

    Experimental and theoretical results on the mode-locking dynamics in vertical-external-cavity surface-emitting lasers with semiconductor and graphene saturable absorber mirrors are reviewed with an emphasis on the role of nonequilibrium carrier effects. The systems are studied theoretically using a fully microscopic many-body model for the carrier distributions and polarizations, coupled to Maxwell’s equations for the field propagation. Pump-probe measurements are performed with (sub-) 100 fs resolution. The analysis shows that the non-equilibrium carrier dynamics in the gain quantum-wells and saturable absorber medium significantly influences the system’s response and the resulting mode-locked pulses. The microscopic model is used to study the pulse build up from spontaneous emission noise and to determine the dependence of achievable pulse lengths and fluences on the amounts of saturable and non-saturable losses and the optical gain. The change of the group delay dispersion (GDD) on the pump level is examined and the dependence of the pulse lengths on the total amount of GDD is demonstrated experimentally. Theory-experiment comparisons are used to demonstrate the highly quantitative accuracy of the fully microscopic modeling.

  17. Material Engineering for Monolithic Semiconductor Mode-Locked Lasers

    DEFF Research Database (Denmark)

    Kulkova, Irina

    This thesis is devoted to the materials engineering for semiconductor monolithic passively mode-locked lasers (MLLs) as a compact energy-efficient source of ultrashort optical pulses. Up to the present day, the achievement of low-noise sub-picosecond pulse generation has remained a challenge....... This work has considered the role of the combined ultrafast gain and absorption dynamics in MLLs as a main factor limiting laser performance. An independent optimization of MLL amplifier and saturable absorber active materials was performed. Two promising approaches were considered: quantum dot (QD...... quality and low internal reflection compatible with the severe requirements of monolithic MLLs. Experimental characterization of static material parameters of the fabricated devices revealed QW-like gain behavior of a self-assembled InAs/InP QD material and low internal efficiency which limited its...

  18. Absorbed dose by a CMOS in radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L. C., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2011-10-15

    Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

  19. Influence of kinetic hole filling on the stability of mode-locked semiconductor disk lasers

    Science.gov (United States)

    Moloney, Jerome V.; Kilen, Isak; Hader, Jorg; Koch, Stephan W.

    2016-03-01

    Microscopic many-body theory is employed to analyze the mode-locking dynamics of a vertical external-cavity surface-emitting laser with a saturable absorber mirror. The quantum-wells are treated microscopically through the semiconductor Bloch equations and the light field using Maxwell's equations. Higher order correlation effects such as polarization dephasing and carrier relaxation at the second Born level are included and also approximated using effective rates fitted to second-Born-Markov evaluations. The theory is evaluated numerically for vertical external cavity surface emitting lasers with resonant periodic gain media. For given gain, the influence of the loss conditions on the very-short pulse generation in the range above 100 fs is analyzed. Optimized operational parameters are identified. Additionally, the fully microscopic theory at the second Born level is used to carrier out a pump-probe study of the carrier recovery in individual critical components of the VECSEL cavity such as the VECSEL chip itself and semiconductor or graphene saturable absorber mirrors.

  20. High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

    Directory of Open Access Journals (Sweden)

    Andreas Schmitt-Sody

    2008-01-01

    Full Text Available We report on hybrid mode-locked laser operation of a tapered semiconductor amplifier in an external ring cavity, generating pulses as short as 0.5 ps at 88.1 MHz with an average power of 60 mW. The mode locking is achieved through a combination of a multiple quantum well saturable absorber (>10% modulation depth and an RF current modulation. This designed laser has 20 nm tuning bandwidth in continuous wave and 10 nm tuning bandwidth in mode locking around 786 nm center wavelength at constant temperature.

  1. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  2. Macroporous Semiconductors

    Directory of Open Access Journals (Sweden)

    Helmut Föll

    2010-05-01

    Full Text Available Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.

  3. Facts about saturated fats

    Science.gov (United States)

    ... fat diary with low-fat or nonfat milk, yogurt, and cheese. Eat more fruits, vegetables, whole grains, and other foods with low or no saturated fat. Alternative Names Cholesterol - saturated fat; Atherosclerosis - saturated fat; Hardening of the ...

  4. Saturated fat (image)

    Science.gov (United States)

    Saturated fat can raise blood cholesterol and can put you at risk for heart disease and stroke. You should ... limit any foods that are high in saturated fat. Sources of saturated fat include whole-milk dairy ...

  5. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  6. Semiconductor electrochemistry

    CERN Document Server

    Memming, Rüdiger

    2015-01-01

    Providing both an introduction and an up-to-date survey of the entire field, this text captivates the reader with its clear style and inspiring, yet solid presentation. The significantly expanded second edition of this milestone work is supplemented by a completely new chapter on the hot topic of nanoparticles and includes the latest insights into the deposition of dye layers on semiconductor electrodes. In his monograph, the acknowledged expert Professor Memming primarily addresses physical and electrochemists, but materials scientists, physicists, and engineers dealing with semiconductor technology and its applications will also benefit greatly from the contents.

  7. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  8. Multiphoton in vivo imaging with a femtosecond semiconductor disk laser.

    Science.gov (United States)

    Voigt, Fabian F; Emaury, Florian; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

    2017-07-01

    We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

  9. Multiphoton in vivo imaging with a femtosecond semiconductor disk laser

    Science.gov (United States)

    Voigt, Fabian F.; Emaury, Florian; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

    2017-01-01

    We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging. PMID:28717563

  10. Ultrafast spectroscopy of semiconductors and semiconductor nanostructures

    CERN Document Server

    Shah, Jagdeep

    1996-01-01

    Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures Ultrafast spectroscopy of semiconductors is currently one of the most exciting areas of research in condensed-matter physics Remarkable recent progress in the generation of tunable femtosecond pulses has allowed direct investigation of the most fundamental dynamical processes in semiconductors This monograph presents some of the most striking recent advances in the field of ultrafast spectroscopy of semiconductors and their nanostructures After a brief overview of the basic concepts and of the recent advances in the techniques of ultrashort pulse generation and ultrafast spectroscopy, it discusses the physics of relaxation, tunneling and transport dynamics in semiconductors and semiconductor nanostructures following excitation by femtosecond laser pulses

  11. Photocatalysis Using Semiconductor Nanoclusters

    Energy Technology Data Exchange (ETDEWEB)

    Thurston, T.R.; Wilcoxon,J.P.

    1999-01-21

    We report on experiments using nanosize MoS{sub 2} to photo-oxidize organic pollutants in water using visible light as the energy source. We have demonstrated that we can vary the redox potentials and absorbance characteristics of these small semiconductors by adjusting their size, and our studies of the photooxidation of organic molecules have revealed that the rate of oxidation increases with increasing bandgap (i.e. more positive valence band and more negative conduction band potentials). Because these photocatalysis reactions can be performed with the nanoclusters fully dispersed and stable in solution, liquid chromatography can be used to determine both the intermediate reaction products and the state of the nanoclusters during the reaction. We have demonstrated that the MoS{sub 2} nanoclusters remain unchanged during the photooxidation process by this technique. We also report on studies of MoS{sub 2} nanoclusters deposited on TiO{sub 2} powder.

  12. Theory of mode-locked semiconductor lasers.

    NARCIS (Netherlands)

    Leegwater, J.A.

    1996-01-01

    We present a theoretical study of semiconductor mode-locked lasers at a phenomenological level. We use the slow absorber model of New and Haus, but extend the analysis by taking into account the shift in the gain maximum due to the changing number of carriers. In our analysis of the resulting

  13. Bend-absorbing clamp

    Science.gov (United States)

    Abbott, J. R.; Valencia, B., Jr.

    1979-01-01

    Compact, inexpensive clamp for flexible cables or rigid tubes absorbs vibrations and other motion. It accomodates wide range of dimensions, and saves space by eliminating pigtails or bellows commonly used to absorb linear movement or vibrations

  14. Dispersion-induced nonlinearities in semiconductors

    DEFF Research Database (Denmark)

    Mørk, Jesper; Mecozzi, A.

    2002-01-01

    A dispersive and saturable medium is shown, under very general conditions, to possess ultrafast dynamic behaviour due to non-adiabatic polarisation dynamics. Simple analytical expressions relating the effect to the refractive index dispersion of a semiconductor ire derived and the magnitude...

  15. Power semiconductors

    CERN Document Server

    Kubát, M

    1984-01-01

    The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation an...

  16. Saturated Switching Systems

    CERN Document Server

    Benzaouia, Abdellah

    2012-01-01

    Saturated Switching Systems treats the problem of actuator saturation, inherent in all dynamical systems by using two approaches: positive invariance in which the controller is designed to work within a region of non-saturating linear behaviour; and saturation technique which allows saturation but guarantees asymptotic stability. The results obtained are extended from the linear systems in which they were first developed to switching systems with uncertainties, 2D switching systems, switching systems with Markovian jumping and switching systems of the Takagi-Sugeno type. The text represents a thoroughly referenced distillation of results obtained in this field during the last decade. The selected tool for analysis and design of stabilizing controllers is based on multiple Lyapunov functions and linear matrix inequalities. All the results are illustrated with numerical examples and figures many of them being modelled using MATLAB®. Saturated Switching Systems will be of interest to academic researchers in con...

  17. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  18. Methods for absorbing neutrons

    Science.gov (United States)

    Guillen, Donna P [Idaho Falls, ID; Longhurst, Glen R [Idaho Falls, ID; Porter, Douglas L [Idaho Falls, ID; Parry, James R [Idaho Falls, ID

    2012-07-24

    A conduction cooled neutron absorber may include a metal matrix composite that comprises a metal having a thermal neutron cross-section of at least about 50 barns and a metal having a thermal conductivity of at least about 1 W/cmK. Apparatus for providing a neutron flux having a high fast-to-thermal neutron ratio may include a source of neutrons that produces fast neutrons and thermal neutrons. A neutron absorber positioned adjacent the neutron source absorbs at least some of the thermal neutrons so that a region adjacent the neutron absorber has a fast-to-thermal neutron ratio of at least about 15. A coolant in thermal contact with the neutron absorber removes heat from the neutron absorber.

  19. Multispectral metamaterial absorber

    OpenAIRE

    Grant, James; McCrindle, I.J.H.; Li, C; D. R. S. Cumming

    2014-01-01

    We present the simulation, implementation, and measurement of a multispectral metamaterial absorber (MSMMA) and show that we can realize a simple absorber structure that operates in the mid-IR and terahertz (THz) bands. By embedding an IR metamaterial absorber layer into a standard THz metamaterial absorber stack, a narrowband resonance is induced at a wavelength of 4.3 μm. This resonance is in addition to the THz metamaterial absorption resonance at 109 μm (2.75 THz). We demonstrate the inhe...

  20. Ultrafast THz saturable absorption in doped semiconductors at room temperature

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, M. V.

    2011-01-01

    Ultrafast Phenomena XVII presents the latest advances in ultrafast science, including both ultrafast optical technology and the study of ultrafast phenomena. It covers picosecond, femtosecond and attosecond processes relevant to applications in physics, chemistry, biology, and engineering. Ultraf...... and provides an up-to-date view of this important and rapidly advancing field....

  1. Review of wide band-gap semiconductors technology

    Directory of Open Access Journals (Sweden)

    Jin Haiwei

    2016-01-01

    Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.

  2. Multispectral metamaterial absorber.

    Science.gov (United States)

    Grant, J; McCrindle, I J H; Li, C; Cumming, D R S

    2014-03-01

    We present the simulation, implementation, and measurement of a multispectral metamaterial absorber (MSMMA) and show that we can realize a simple absorber structure that operates in the mid-IR and terahertz (THz) bands. By embedding an IR metamaterial absorber layer into a standard THz metamaterial absorber stack, a narrowband resonance is induced at a wavelength of 4.3 μm. This resonance is in addition to the THz metamaterial absorption resonance at 109 μm (2.75 THz). We demonstrate the inherent scalability and versatility of our MSMMA by describing a second device whereby the MM-induced IR absorption peak frequency is tuned by varying the IR absorber geometry. Such a MSMMA could be coupled with a suitable sensor and formed into a focal plane array, enabling multispectral imaging.

  3. Coherent and ultrafast optoelectronics in III-V semiconductor compounds

    Energy Technology Data Exchange (ETDEWEB)

    Foerst, M.; Nagel, M.; Awad, M.; Waechter, M.; Kurz, H. [Institut fuer Halbleitertechnik, RWTH Aachen University, 52074 Aachen (Germany); Dekorsy, T. [Universitaet Konstanz, Fachbereich Physik, 78457 Konstanz (Germany)

    2007-08-15

    III-V compound semiconductors offer a fascinating multitude of phenomena which have become accessible via ultrafast time-resolved spectroscopy. Coherent vibronic and electronic dynamics are prepared by excitation with taylored femtosecond laser pulses. The analysis of their temporal dephasing or decay provides deep insights into the interaction between electronic and vibronic degrees of freedom and the surrounding bath in high purity quantum structures. In contrast to coherent electronic or vibronic states, deliberately introduced growth defects can be used to drastically shorten the lifetime of optically excited carriers. Sub-picosecond carrier lifetimes open the possibility to realize ultrafast saturable absorbers and optoelectronic transducer elements. They are particularly important as key elements in THz technology, such as efficient THz emitters, detectors, and for on-chip THz technology. This paper summarizes the most distinguished results relevant in the context of ultrafast optoelectronics and THz technology obtained in close collaboration with the Paul-Drude-Institute Berlin over the past decade. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Absorber and gain chip optimization to improve performance from a passively modelocked electrically pumped vertical external cavity surface emitting laser

    Energy Technology Data Exchange (ETDEWEB)

    Zaugg, C. A., E-mail: zauggc@phys.ethz.ch; Mangold, M.; Pallmann, W. P.; Golling, M.; Tilma, B. W.; Keller, U. [Department of Physics, Institute for Quantum Electronics, ETH Zürich, 8093 Zürich (Switzerland); Gronenborn, S.; Moench, H.; Weichmann, U. [Philips Technologie GmbH Photonics Aachen, Steinbachstrasse 15, 52074 Aachen (Germany); Miller, M. [Philips Technologie GmbH U-L-M Photonics, Lise-Meitner-Strasse 13, 89081 Ulm (Germany)

    2014-03-24

    We present an electrically pumped vertical-external-cavity surface-emitting laser (EP-VECSEL) modelocked with a semiconductor saturable absorber mirror (SESAM) with significantly improved performance. In different cavity configurations, we present the shortest pulses (2.5 ps), highest average output power (53.2 mW), highest repetition rate (18.2 GHz), and highest peak power (4.7 W) to date. The simple and low-cost concept of EP-VECSELs is very attractive for mass-market applications such as optical communication and clocking. The improvements result from an optimized gain chip from Philips Technologie GmbH and a SESAM, specifically designed for EP-VECSELs. For the gain chip, we found a better trade-off between electrical and optical losses with an optimized doping scheme in the substrate to increase the average output power. Furthermore, the device's bottom contact diameter (60 μm) is smaller than the oxide aperture diameter (100 μm), which favors electro-optical conversion into a TEM{sub 00} mode. Compared to optically pumped VECSELs we have to increase the field enhancement in the active region of an EP-VECSEL which requires a SESAM with lower saturation fluence and higher modulation depth for modelocking. We therefore used a resonant quantum well SESAM with a 3.5-pair dielectric top-coating (SiN{sub x} and SiO{sub 2}) to enhance the field in the absorber at the lasing wavelength of 980 nm. The absorption bandedge at room temperature is detuned (965 nm) compared to the resonance (980 nm), which enables temperature-tuning of the modulation depth and saturation fluence from approximately 2.5% up to 15% and from 20 μJ/cm{sup 2} to 1.1 μJ/cm{sup 2}, respectively.

  5. Internal absorber solar collector

    Science.gov (United States)

    Sletten, Carlyle J.; Herskovitz, Sheldon B.; Holt, F. S.; Sletten, E. J.

    1981-01-01

    Thin solar collecting panels are described made from arrays of small rod collectors consisting of a refracting dielectric rod lens with an absorber imbedded within it and a reflecting mirror coated on the back side of the dielectric rod. Non-tracking collector panels on vertical walls or roof tops receive approximately 90% of solar radiation within an acceptance zone 60.degree. in elevation angle by 120.degree. or more in the azimuth sectors with a collector concentration ratio of approximately 3.0. Miniaturized construction of the circular dielectric rods with internal absorbers reduces the weight per area of glass, plastic and metal used in the collector panels. No external parts or insulation are needed as heat losses are low due to partial vacuum or low conductivity gas surrounding heated portions of the collector. The miniature internal absorbers are generally made of solid copper with black selective surface and the collected solar heat is extracted at the collector ends by thermal conductivity along the absorber rods. Heat is removed from end fittings by use of liquid circulants. Several alternate constructions are provided for simplifying collector panel fabrication and for preventing the thermal expansion and contraction of the heated absorber or circulant tubes from damaging vacuum seals. In a modified version of the internal absorber collector, oil with temperature dependent viscosity is pumped through a segmented absorber which is now composed of closely spaced insulated metal tubes. In this way the circulant is automatically diverted through heated portions of the absorber giving higher collector concentration ratios than theoretically possible for an unsegmented absorber.

  6. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  7. TOMS Absorbing Aerosol Index

    Data.gov (United States)

    Washington University St Louis — TOMS_AI_G is an aerosol related dataset derived from the Total Ozone Monitoring Satellite (TOMS) Sensor. The TOMS aerosol index arises from absorbing aerosols such...

  8. Reserve current analysis in semiconductor insulator semiconductor ...

    African Journals Online (AJOL)

    Reserve current analysis in semiconductor insulator semiconductor (SIS) solar cells. H Yakubu, PK Mensah. Abstract. No Abstract. Journal of the Ghana Association Vol. 2 (3) 1999: pp. 1-4. Full Text: EMAIL FULL TEXT EMAIL FULL TEXT · DOWNLOAD FULL TEXT DOWNLOAD FULL TEXT.

  9. Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers

    Science.gov (United States)

    Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

    2017-07-01

    We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

  10. Handbook of spintronic semiconductors

    CERN Document Server

    Chen, Weimin

    2010-01-01

    Offers a review of the field of spintronic semiconductors. This book covers a range of topics, including growth and basic physical properties of diluted magnetic semiconductors based on II-VI, III-V and IV semiconductors, developments in theory and experimental techniques and potential device applications.

  11. Multi-spectral imaging of oxygen saturation

    Science.gov (United States)

    Savelieva, Tatiana A.; Stratonnikov, Aleksander A.; Loschenov, Victor B.

    2008-06-01

    The system of multi-spectral imaging of oxygen saturation is an instrument that can record both spectral and spatial information about a sample. In this project, the spectral imaging technique is used for monitoring of oxygen saturation of hemoglobin in human tissues. This system can be used for monitoring spatial distribution of oxygen saturation in photodynamic therapy, surgery or sports medicine. Diffuse reflectance spectroscopy in the visible range is an effective and extensively used technique for the non-invasive study and characterization of various biological tissues. In this article, a short review of modeling techniques being currently in use for diffuse reflection from semi-infinite turbid media is presented. A simple and practical model for use with a real-time imaging system is proposed. This model is based on linear approximation of the dependence of the diffuse reflectance coefficient on relation between absorbance and reduced scattering coefficient. This dependence was obtained with the Monte Carlo simulation of photon propagation in turbid media. Spectra of the oxygenated and deoxygenated forms of hemoglobin differ mostly in the red area (520 - 600 nm) and have several characteristic points there. Thus four band-pass filters were used for multi-spectral imaging. After having measured the reflectance, the data obtained are used for fitting the concentration of oxygenated and free hemoglobin, and hemoglobin oxygen saturation.

  12. Venous oxygen saturation.

    Science.gov (United States)

    Hartog, Christiane; Bloos, Frank

    2014-12-01

    Early detection and rapid treatment of tissue hypoxia are important goals. Venous oxygen saturation is an indirect index of global oxygen supply-to-demand ratio. Central venous oxygen saturation (ScvO2) measurement has become a surrogate for mixed venous oxygen saturation (SvO2). ScvO2 is measured by a catheter placed in the superior vena cava. After results from a single-center study suggested that maintaining ScvO2 values >70% might improve survival rates in septic patients, international practice guidelines included this target in a bundle strategy to treat early sepsis. However, a recent multicenter study with >1500 patients found that the use of central hemodynamic and ScvO2 monitoring did not improve long-term survival when compared to the clinical assessment of the adequacy of circulation. It seems that if sepsis is recognized early, a rapid initiation of antibiotics and adequate fluid resuscitation are more important than measuring venous oxygen saturation. Copyright © 2014 Elsevier Ltd. All rights reserved.

  13. Thermally induced nonlinear optical absorption in metamaterial perfect absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Guddala, Sriram, E-mail: sguddala@iitk.ac.in; Kumar, Raghwendra; Ramakrishna, S. Anantha [Department of Physics, Indian Institute of Technology Kanpur, Kanpur 208016 (India)

    2015-03-16

    A metamaterial perfect absorber consisting of a tri-layer (Al/ZnS/Al) metal-dielectric-metal system with top aluminium nano-disks was fabricated by laser-interference lithography and lift-off processing. The metamaterial absorber had peak resonant absorbance at 1090 nm and showed nonlinear absorption for 600ps laser pulses at 1064 nm wavelength. A nonlinear saturation of reflectance was measured to be dependent on the average laser power incident and not the peak laser intensity. The nonlinear behaviour is shown to arise from the heating due to the absorbed radiation and photo-thermal changes in the dielectric properties of aluminium. The metamaterial absorber is seen to be damage resistant at large laser intensities of 25 MW/cm{sup 2}.

  14. On the EQE-bias characteristics of bottom-illuminated AlGaN-based metal-semiconductor-metal photodetectors with asymmetric electrode geometry

    Science.gov (United States)

    Brendel, Moritz; Brunner, Frank; Weyers, Markus

    2017-11-01

    The bias dependence of the external quantum efficiency (EQE) of bottom-illuminated Al0.5Ga0.5N/AlN metal-semiconductor-metal photodetectors shows certain features which are directly related to the device geometry, i.e., the electrode design and the absorber layer thickness. Asymmetric detectors of any absorber thickness between 0.5 μm and 0.1 μm show a reduced EQE in reverse saturation. Furthermore, an enhanced EQE appears below the threshold either in reverse polarity for thick (i.e., 0.5 μm, 0.3 μm) or in forward polarity for thin (0.1 μm) AlGaN absorber layers. In order to understand the underlying physics of these phenomena, measured and simulated data are compared in the framework of a recently developed model for symmetric devices, taking into account defect-related non-radiative recombination and electric polarization effects. The electron capture time for recombination in the AlGaN absorber and the (background) donor density in the AlN buffer layer are the only parameters to be adjusted to reproduce all experimental trends qualitatively.

  15. The Modulation Response of a Semiconductor Laser Amplifier

    DEFF Research Database (Denmark)

    Mørk, Jesper; Mecozzi, Antonio; Eisenstein, Gadi

    1999-01-01

    are analyzed. The nonlinear transparent waveguide, i.e. an amplifier saturated to the point where the stimulated emission balances the internal losses, is shown to be analytically solvable and is a convenient vehicle for gaining qualitative understanding of the dynamics of modulated semiconductor optical......We present a theoretical analysis of the modulation response of a semiconductor laser amplifier. We find a resonance behavior similar to the well-known relaxation oscillation resonance found in semiconductor lasers, but of a different physical origin. The role of the waveguide (scattering) loss...... amplifiers....

  16. Superluminal pulse reflection from a weakly absorbing dielectric slab.

    Science.gov (United States)

    Wang, Li-Gang; Zhu, Shi-Yao

    2006-07-15

    Group delay for a reflected light pulse from a weakly absorbing dielectric slab is theoretically investigated, and large negative group delay is found for weak absorption near a resonance of the slab [Re(kd)=mpi]. The group delay for both the reflected and transmitted pulses will be saturated with an increase of the absorption.

  17. Numerical model of frequency converter based on four-wave mixing in semiconductor amplifiers

    DEFF Research Database (Denmark)

    Cassioli, D.; Scotti, S.; Mecozzi, A.

    1999-01-01

    We describe a numerical model of the dynamics of a semiconductor optical amplifier that includes the description of the nonlinear optical processes within the waveguide and the longitudinal inhomogeneity caused by the saturating field.......We describe a numerical model of the dynamics of a semiconductor optical amplifier that includes the description of the nonlinear optical processes within the waveguide and the longitudinal inhomogeneity caused by the saturating field....

  18. Saturated and trans fats

    National Research Council Canada - National Science Library

    Shader, Richard I

    2014-01-01

    ... Original Pancake Mix plus ingredients suggested by the recipe: 2 g saturated fat (SF) and no trans fatty acids or trans fat (TFA); bacon, Oscar Mayer Lower Sodium Bacon: 2.5 g SF and no TFA; sausages, Jimmy Dean Original Pork Sausage Links: 8 g SF and no TFA; potatoes, Ore-Ida Mini Tater Tots: 2 g SF and no TFA; and nondairy creamer, Nestlé Coffee-...

  19. Aperiodic-metamaterial-based absorber

    OpenAIRE

    Quanlong Yang; Xieyu Chen; Yanfeng Li; Xueqian Zhang; Yuehong Xu; Zhen Tian; Chunmei Ouyang; Jianqiang Gu; Jiaguang Han; Weili Zhang

    2017-01-01

    The periodic-metamaterial-based perfect absorber has been studied broadly. Conversely, if the unit cell in the metamaterial-based absorber is arranged aperiodically (aperiodic-metamaterial-based absorber), how does it perform? Inspired by this, here we present a systematic study of the aperiodic-metamaterial-based absorber. By investigating the response of metamaterial absorbers based on periodic, Fibonacci, Thue-Morse, and quasicrystal lattices, we found that aperiodic-metamaterial-based abs...

  20. Solar concentrator/absorber

    Science.gov (United States)

    Von Tiesenhausen, G. F.

    1976-01-01

    Collector/energy converter, consisting of dual-slope optical concentrator and counterflow thermal energy absorber, is attached to multiaxis support structure. Efficient over wide range of illumination levels, device may be used to generate high temperature steam, serve as solar powered dryer, or power absorption cycle cooler.

  1. Plasmonic nanoparticle-semiconductor composites for efficient solar water splitting

    NARCIS (Netherlands)

    Valenti, M.; Jonsson, M.P.; Biskos, G.; Schmidt-Ott, A.; Smith, W.A.

    2016-01-01

    Photoelectrochemical (PEC) water splitting is a promising technology that uses light absorbing semiconductors to convert solar energy directly into a chemical fuel (i.e., hydrogen). PEC water splitting has the potential to become a key technology in achieving a sustainable society, if high solar

  2. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  3. Semiconductor devices physics and technology

    CERN Document Server

    Sze, Simon

    2012-01-01

    Semiconductor Devices: Physics and Technology, Third Edition is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.

  4. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  5. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2001-01-01

    This book presents a detailed description of the basic physics of semiconductors. All the important equations describing the properties of these materials are derived without the help of other textbooks. The reader is assumed to have only a basic command of mathematics and some elementary semiconductor physics. The text covers a wide range of important semiconductor phenomena, from the simple to the advanced. Examples include recent progress in semiconductor quantum structures such as two-dimensional electron-gas systems, ballistic transport, the quantum Hall effect, the Landauer formula, the Coulomb blockade and the single-electron transistor.

  6. Saturation in nuclei

    CERN Document Server

    Lappi, T

    2010-01-01

    This talk discusses some recent studies of gluon saturation in nuclei. We stress the connection between the initial condition in heavy ion collisions and observables in deep inelastic scattering (DIS). The dominant degree of freedom in the small x nuclear wavefunction is a nonperturbatively strong classical gluon field, which determines the initial condition for the glasma fields in the initial stages of a heavy ion collision. A correlator of Wilson lines from the same classical fields, known as the dipole cross section, can be used to compute many inclusive and exclusive observables in DIS.

  7. Intraband effects on ultrafast pulse propagation in semiconductor ...

    Indian Academy of Sciences (India)

    propagation of such pulses through a semiconductor optical amplifier (SOA) requires con- sideration of intraband ... sees a fast recovering nonlinear gain which introduces less distortion in the pulse shape and spectrum of the ... modulation technique based on the nonlinearity induced by gain saturation. SOAs work well for ...

  8. Universal metamaterial absorbe

    CERN Document Server

    Smaali, Rafik; Moreau, Antoine; Taliercio, Thierry; Centeno, Emmanuel

    2016-01-01

    We propose a design for an universal absorber, characterized by a resonance frequency that can be tuned from visible to microwave frequencies independently of the choice of the metal and the dielectrics involved. An almost resonant perfect absorption up to 99.8 % is demonstrated at resonance for all polarization states of light and for a very wide angular aperture. These properties originate from a magnetic Fabry-Perot mode that is confined in a dielectric spacer of $\\lambda/100$ thickness by a metamaterial layer and a mirror. An extraordinary large funneling through nano-slits explains how light can be trapped in the structure. Simple scaling laws can be used as a recipe to design ultra-thin perfect absorbers whatever the materials and the desired resonance wavelength, making our design truly universal.

  9. Optimal Sound Absorbing Structures

    CERN Document Server

    Yang, Min; Fu, Caixing; Sheng, Ping

    2016-01-01

    Causal nature of the acoustic response, for any materials or structures, dictates an inequality that relates the absorption spectrum of the sample to its thickness. We present a general recipe for constructing sound-absorbing structures that can attain near-equality for the causal relation with very high absorption performance; such structures are denoted optimal. Our strategy involves using carefully designed acoustic metamaterials as backing to a thin layer of conventional sound absorbing material, e.g., acoustic sponge. By using this design approach, we have realized a 12 cm-thick structure that exhibits broadband, near-perfect flat absorption spectrum starting at around 400 Hz. From the causal relation, the calculated minimum sample thickness is 11.5 cm for the observed absorption spectrum. We present the theory that underlies such absorption performance, involving the evanescent waves and their interaction with a dissipative medium, and show the excellent agreement with the experiment.

  10. Absorbable and biodegradable polymers

    CERN Document Server

    Shalaby, Shalaby W

    2003-01-01

    INTRODUCTION NOTES: Absorbable/Biodegradable Polymers: Technology Evolution. DEVELOPMENT AND APPLICATIONOF NEW SYSTEMS: Segmented Copolyesters with Prolonged Strength Retention Profiles. Polyaxial Crystalline Fiber-Forming Copolyester. Polyethylene Glycol-Based Copolyesters. Cyanoacrylate-Based Systems as Tissue Adhesives. Chitosan-Based Systems. Hyaluronic Acid-Based Systems. DEVELOPMENTS IN PREPARATIVE, PROCESSING, AND EVALUATION METHODS: New Approaches to the Synthesis of Crystalline. Fiber-Forming Aliphatic Copolyesters. Advances in Morphological Development to Tailor the Performance of Me

  11. Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

    Science.gov (United States)

    Brendel, Moritz; Helbling, Markus; Knigge, Andrea; Brunner, Frank; Weyers, Markus

    2015-12-01

    A comprehensive study on top- and bottom-illuminated Al0.5Ga0.5N/AlN metal-semiconductor-metal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50 V reaching about 50% for 0.1 μm and 67% for 0.5 μm thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observed threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al0.5Ga0.5N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers.

  12. Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

    Energy Technology Data Exchange (ETDEWEB)

    Brendel, Moritz, E-mail: moritz.brendel@fbh-berlin.de; Helbling, Markus; Knigge, Andrea; Brunner, Frank; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH), Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2015-12-28

    A comprehensive study on top- and bottom-illuminated Al{sub 0.5}Ga{sub 0.5}N/AlN metal-semiconductor-metal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50 V reaching about 50% for 0.1 μm and 67% for 0.5 μm thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observed threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al{sub 0.5}Ga{sub 0.5}N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers.

  13. Theory of nondegenerate four-wave mixing between pulses in a semiconductor waveguide

    DEFF Research Database (Denmark)

    Mørk, Jesper; Mecozzi, A.

    1997-01-01

    We develop a perturbation theory for calculating the effects of saturation on nondegenerate four-wave mixing between short optical pulses in a semiconductor optical amplifier. Saturation due to ultrafast intraband dynamics like carrier heating and spectral hole burning is found to be important...

  14. Semiconductor radiation detectors. Device physics

    Energy Technology Data Exchange (ETDEWEB)

    Lutz, G. [Max-Planck-Institut fuer Physik, Muenchen (Germany)]|[Max-Planck-Institut fuer Extraterrestrische Physik, Garching (Germany). Semiconductor Lab.

    1999-07-01

    The following topics were dealt with: semiconductor radiation detectors, basic semiconductor structures, semiconductors, energy measurement, radiation-level measurement, position measurement, electronics of the readout function, detectors with intrinsic amplification, detector technology, device stability, radiation hardness and device simulation.

  15. Absorber for terahertz radiation management

    Science.gov (United States)

    Biallas, George Herman; Apeldoorn, Cornelis; Williams, Gwyn P.; Benson, Stephen V.; Shinn, Michelle D.; Heckman, John D.

    2015-12-08

    A method and apparatus for minimizing the degradation of power in a free electron laser (FEL) generating terahertz (THz) radiation. The method includes inserting an absorber ring in the FEL beam path for absorbing any irregular THz radiation and thus minimizes the degradation of downstream optics and the resulting degradation of the FEL output power. The absorber ring includes an upstream side, a downstream side, and a plurality of wedges spaced radially around the absorber ring. The wedges form a scallop-like feature on the innermost edges of the absorber ring that acts as an apodizer, stopping diffractive focusing of the THz radiation that is not intercepted by the absorber. Spacing between the scallop-like features and the shape of the features approximates the Bartlett apodization function. The absorber ring provides a smooth intensity distribution, rather than one that is peaked on-center, thereby eliminating minor distortion downstream of the absorber.

  16. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  17. High energy semiconductor switch

    Science.gov (United States)

    Risberg, R. L.

    1989-02-01

    The objective was a controller for electric motors. By operating standard Nema B induction motors at variable speed a great deal of energy is saved. This is especially true in pumping and air conditioning applications. To allow wider use of variable speed AC drives, and to provide improved performance, a better semiconductor switch was sought. This was termed the High Energy Semiconductor Switch.

  18. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  19. Semiconductor Research Experimental Techniques

    CERN Document Server

    Balkan, Naci

    2012-01-01

    The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.

  20. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  1. Corrosion resistant neutron absorbing coatings

    Science.gov (United States)

    Choi, Jor-Shan [El Cerrito, CA; Farmer, Joseph C [Tracy, CA; Lee, Chuck K [Hayward, CA; Walker, Jeffrey [Gaithersburg, MD; Russell, Paige [Las Vegas, NV; Kirkwood, Jon [Saint Leonard, MD; Yang, Nancy [Lafayette, CA; Champagne, Victor [Oxford, PA

    2012-05-29

    A method of forming a corrosion resistant neutron absorbing coating comprising the steps of spray or deposition or sputtering or welding processing to form a composite material made of a spray or deposition or sputtering or welding material, and a neutron absorbing material. Also a corrosion resistant neutron absorbing coating comprising a composite material made of a spray or deposition or sputtering or welding material, and a neutron absorbing material.

  2. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  3. A Perfect Terahertz Metamaterial Absorber

    OpenAIRE

    Bagheri, Alireza; Moradi, Gholamreza

    2015-01-01

    In this paper the design for an absorbing metamaterial with near unity absorbance in terahertz region is presented. The absorber's unit cell structure consists of two metamaterial resonators that couple to electric and magnetic fields separately. The structure allows us to maximize absorption by varying dielectric material and thickness and, hence the effective electrical permittivity and magnetic permeability.

  4. Solar radiation absorbing material

    Science.gov (United States)

    Googin, John M.; Schmitt, Charles R.; Schreyer, James M.; Whitehead, Harlan D.

    1977-01-01

    Solar energy absorbing means in solar collectors are provided by a solar selective carbon surface. A solar selective carbon surface is a microporous carbon surface having pores within the range of 0.2 to 2 micrometers. Such a surface is provided in a microporous carbon article by controlling the pore size. A thermally conductive substrate is provided with a solar selective surface by adhering an array of carbon particles in a suitable binder to the substrate, a majority of said particles having diameters within the range of about 0.2-10 microns.

  5. Saturated Zone Colloid Transport

    Energy Technology Data Exchange (ETDEWEB)

    H. S. Viswanathan

    2004-10-07

    This scientific analysis provides retardation factors for colloids transporting in the saturated zone (SZ) and the unsaturated zone (UZ). These retardation factors represent the reversible chemical and physical filtration of colloids in the SZ. The value of the colloid retardation factor, R{sub col} is dependent on several factors, such as colloid size, colloid type, and geochemical conditions (e.g., pH, Eh, and ionic strength). These factors are folded into the distributions of R{sub col} that have been developed from field and experimental data collected under varying geochemical conditions with different colloid types and sizes. Attachment rate constants, k{sub att}, and detachment rate constants, k{sub det}, of colloids to the fracture surface have been measured for the fractured volcanics, and separate R{sub col} uncertainty distributions have been developed for attachment and detachment to clastic material and mineral grains in the alluvium. Radionuclides such as plutonium and americium sorb mostly (90 to 99 percent) irreversibly to colloids (BSC 2004 [DIRS 170025], Section 6.3.3.2). The colloid retardation factors developed in this analysis are needed to simulate the transport of radionuclides that are irreversibly sorbed onto colloids; this transport is discussed in the model report ''Site-Scale Saturated Zone Transport'' (BSC 2004 [DIRS 170036]). Although it is not exclusive to any particular radionuclide release scenario, this scientific analysis especially addresses those scenarios pertaining to evidence from waste-degradation experiments, which indicate that plutonium and americium may be irreversibly attached to colloids for the time scales of interest. A section of this report will also discuss the validity of using microspheres as analogs to colloids in some of the lab and field experiments used to obtain the colloid retardation factors. In addition, a small fraction of colloids travels with the groundwater without any significant

  6. A modular wideband sound absorber

    Science.gov (United States)

    Plumb, G. D.

    The absorption coefficients were measured of various depths of RW2 grade Rockwool laid directly on the floor of the ISO-Standard reverberation room at BBC Research Department. The Rockwool was very effective as a wideband sound absorber. A new absorber was designed and tested, having the dimensions of the existing BBC type A modular absorbers and containing RW2 Rockwool. The new absorber has a smoother absorption coefficient curve, a less complicated construction, and weighs less than the existing BBC wideband absorber (type A8/A9). It has been named type A11 and has an equivalent performance to that of BBC type A2 and A3 absorbers combined. It complements, very well, the performance of the A10 very low frequency absorber, described in a companion Report (BBC RD No. 1992/10).

  7. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  8. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  9. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  10. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  11. Broad-band semiconductor optical amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Ding Ying [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)]. E-mail: yingding@red.semi.ac.cn; Kan Qiang [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Wang Junling [Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Pan Jiaoqing [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Zhou Fan [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Chen Weixi [School of Physics, Peking University, Beijing 100871 (China); Wang Wei [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2007-01-15

    Broad-band semiconductor optical amplifiers (SOAs) with different thicknesses and thin bulk tensile-strained active layers were fabricated and studied. Amplified spontaneous emission (ASE) spectra and gain spectra of SOAs were measured and analyzed at different CW biases. A maximal 3 dB ASE bandwidth of 136 nm ranging from 1480 to 1616 nm, and a 3 dB optical amplifier gain bandwidth of about 90 nm ranging from 1510 to 1600 nm, were obtained for the very thin bulk active SOA. Other SOAs characteristics such as saturation output power and polarization sensitivity were measured and compared.

  12. Metamaterial electromagnetic wave absorbers.

    Science.gov (United States)

    Watts, Claire M; Liu, Xianliang; Padilla, Willie J

    2012-06-19

    The advent of negative index materials has spawned extensive research into metamaterials over the past decade. Metamaterials are attractive not only for their exotic electromagnetic properties, but also their promise for applications. A particular branch-the metamaterial perfect absorber (MPA)-has garnered interest due to the fact that it can achieve unity absorptivity of electromagnetic waves. Since its first experimental demonstration in 2008, the MPA has progressed significantly with designs shown across the electromagnetic spectrum, from microwave to optical. In this Progress Report we give an overview of the field and discuss a selection of examples and related applications. The ability of the MPA to exhibit extreme performance flexibility will be discussed and the theory underlying their operation and limitations will be established. Insight is given into what we can expect from this rapidly expanding field and future challenges will be addressed. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Dual broadband metamaterial absorber.

    Science.gov (United States)

    Kim, Young Ju; Yoo, Young Joon; Kim, Ki Won; Rhee, Joo Yull; Kim, Yong Hwan; Lee, YoungPak

    2015-02-23

    We propose polarization-independent and dual-broadband metamaterial absorbers at microwave frequencies. This is a periodic meta-atom array consisting of metal-dielectric-multilayer truncated cones. We demonstrate not only one broadband absorption from the fundamental magnetic resonances but additional broadband absorption in high-frequency range using the third-harmonic resonance, by both simulation and experiment. In simulation, the absorption was over 90% in 3.93-6.05 GHz, and 11.64-14.55 GHz. The corresponding experimental absorption bands over 90% were 3.88-6.08 GHz, 9.95-10.46 GHz and 11.86-13.84 GHz, respectively. The origin of absorption bands was elucidated. Furthermore, it is independent of polarization angle owing to the multilayered circular structures. The design is scalable to smaller size for the infrared and the visible ranges.

  14. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  15. Defects in semiconductor nanostructures

    Science.gov (United States)

    Singh, Vijay A.; Harbola, Manoj K.; Pathak, Praveen

    2008-02-01

    Impurities play a pivotal role in semiconductors. One part in a million of phosphorous in silicon alters the conductivity of the latter by several orders of magnitude. Indeed, the information age is possible only because of the unique role of shallow impurities in semiconductors. Although work in semiconductor nanostructures (SN) has been in progress for the past two decades, the role of impurities in them has been only sketchily studied. We outline theoretical approaches to the electronic structure of shallow impurities in SN and discuss their limitations. We find that shallow levels undergo a SHADES (SHAllow-DEep-Shallow) transition as the SN size is decreased. This occurs because of the combined effect of quantum confinement and reduced dielectric constant in SN. Level splitting is pronounced and this can perhaps be probed by ESR and ENDOR techniques. Finally, we suggest that a perusal of literature on (semiconductor) cluster calculations carried out 30 years ago would be useful.

  16. Physics of semiconductor devices

    CERN Document Server

    Rudan, Massimo

    2015-01-01

    This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices.  Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of s...

  17. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  18. Electrowetting on a semiconductor

    OpenAIRE

    Arscott, Steve; Gaudet, Matthieu

    2012-01-01

    We report electrowetting on a semiconductor using of a mercury droplet resting on a silicon surface. The effect is demonstrated using commercial n-type and p-type single-crystal (100) silicon wafers of different doping levels. The electrowetting is reversible - the voltage-dependent wetting contact angle variation of the mercury droplet is observed to depend on both the underlying semiconductor doping density and type. The electrowetting behaviour is explained by the voltage-dependent modulat...

  19. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  20. Aperiodic-metamaterial-based absorber

    Directory of Open Access Journals (Sweden)

    Quanlong Yang

    2017-09-01

    Full Text Available The periodic-metamaterial-based perfect absorber has been studied broadly. Conversely, if the unit cell in the metamaterial-based absorber is arranged aperiodically (aperiodic-metamaterial-based absorber, how does it perform? Inspired by this, here we present a systematic study of the aperiodic-metamaterial-based absorber. By investigating the response of metamaterial absorbers based on periodic, Fibonacci, Thue-Morse, and quasicrystal lattices, we found that aperiodic-metamaterial-based absorbers could display similar absorption behaviors as the periodic one in one hand. However, their absorption behaviors show different tendency depending on the thicknesses of the spacer. Further studies on the angle and polarization dependence of the absorption behavior are also presented.

  1. Aperiodic-metamaterial-based absorber

    Science.gov (United States)

    Yang, Quanlong; Chen, Xieyu; Li, Yanfeng; Zhang, Xueqian; Xu, Yuehong; Tian, Zhen; Ouyang, Chunmei; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2017-09-01

    The periodic-metamaterial-based perfect absorber has been studied broadly. Conversely, if the unit cell in the metamaterial-based absorber is arranged aperiodically (aperiodic-metamaterial-based absorber), how does it perform? Inspired by this, here we present a systematic study of the aperiodic-metamaterial-based absorber. By investigating the response of metamaterial absorbers based on periodic, Fibonacci, Thue-Morse, and quasicrystal lattices, we found that aperiodic-metamaterial-based absorbers could display similar absorption behaviors as the periodic one in one hand. However, their absorption behaviors show different tendency depending on the thicknesses of the spacer. Further studies on the angle and polarization dependence of the absorption behavior are also presented.

  2. Brine Distribution after Vacuum Saturation

    DEFF Research Database (Denmark)

    Hedegaard, Kathrine; Andersen, Bertel Lohmann

    1999-01-01

    Experiments with the vacuum saturation method for brine in plugs of chalk showed that a homogeneous distribution of brine cannot be ensured at saturations below 20% volume. Instead of a homogeneous volume distribution the brine becomes concentrated close to the surfaces of the plugs...

  3. Misconceptions in Reporting Oxygen Saturation

    NARCIS (Netherlands)

    Toffaletti, John; Zijlstra, Willem G.

    2007-01-01

    BACKGROUND: We describe some misconceptions that have become common practice in reporting blood gas and cooximetry results. In 1980, oxygen saturation was incorrectly redefined in a report of a new instrument for analysis of hemoglobin (Hb) derivatives. Oxygen saturation (sO(2)) was redefined as the

  4. Characteristic analysis of a photoexcited metamaterial perfect absorber at terahertz frequencies

    Science.gov (United States)

    Bing, Pibin; Huang, Shichao; Li, Zhongyang; Yu, Zhou; Lu, Ying; Yao, Jianquan

    2017-06-01

    The absorption characteristics of a photoexcited metamaterial absorber at terahertz frequencies were analyzed in this study. Filling photosensitive semiconductor silicon into the gap between the resonator arms leads to modulation of its electromagnetic response through a pump beam which changes conductivity of silicon. Comparisons of terahertz absorbing properties which were caused by different thicknesses and dielectric constants of polyimide, cell sizes and widths of SRRs, and lengths and conductivities of the photosensitive silicon, were studied by using Finite Difference Time Domain (FDTD) from 0.4 THz to 1.6 THz. The results of this study will facilitate the design and preparation of terahertz modulator, filters and absorbers.

  5. Defect Tolerant Semiconductors for Solar Energy Conversion.

    Science.gov (United States)

    Zakutayev, Andriy; Caskey, Christopher M; Fioretti, Angela N; Ginley, David S; Vidal, Julien; Stevanovic, Vladan; Tea, Eric; Lany, Stephan

    2014-04-03

    Defect tolerance is the tendency of a semiconductor to keep its properties despite the presence of crystallographic defects. Scientific understanding of the origin of defect tolerance is currently missing. Here we show that semiconductors with antibonding states at the top of the valence band are likely to be tolerant to defects. Theoretical calculations demonstrate that Cu3N with antibonding valence band maximum has shallow intrinsic defects and no surface states, in contrast to GaN with bonding valence band maximum. Experimental measurements indicate shallow native donors and acceptors in Cu3N thin films, leading to 10(16)-10(17) cm(-3) doping with either electrons or holes depending on the growth conditions. The experimentally measured bipolar doping and the solar-matched optical absorption onset (1.4 eV) make Cu3N a promising candidate absorber for photovoltaic and photoelectrochemical solar cells, despite the calculated indirect fundamental band gap (1.0 eV). These conclusions can be extended to other materials with antibonding character of the valence band, defining a class of defect-tolerant semiconductors for solar energy conversion applications.

  6. Saturation current spikes eliminated in saturable core transformers

    Science.gov (United States)

    Schwarz, F. C.

    1971-01-01

    Unsaturating composite magnetic core transformer, consisting of two separate parallel cores designed so impending core saturation causes signal generation, terminates high current spike in converter primary circuit. Simplified waveform, demonstrates transformer effectiveness in eliminating current spikes.

  7. Electrical addressing and temporal tweezing of localized pulses in passively mode-locked semiconductor lasers

    Science.gov (United States)

    Javaloyes, J.; Camelin, P.; Marconi, M.; Giudici, M.

    2017-08-01

    This work presents an overview of a combined experimental and theoretical analysis on the manipulation of temporal localized structures (LSs) found in passively Vertical-Cavity Surface-Emitting Lasers coupled to resonant saturable absorber mirrors. We show that the pumping current is a convenient parameter for manipulating the temporal Localized Structures, also called localized pulses. While short electrical pulses can be used for writing and erasing individual LSs, we demonstrate that a current modulation introduces a temporally evolving parameter landscape allowing to control the position and the dynamics of LSs. We show that the localized pulses drifting speed in this landscape depends almost exclusively on the local parameter value instead of depending on the landscape gradient, as shown in quasi-instantaneous media. This experimental observation is theoretically explained by the causal response time of the semiconductor carriers that occurs on an finite timescale and breaks the parity invariance along the cavity, thus leading to a new paradigm for temporal tweezing of localized pulses. Different modulation waveforms are applied for describing exhaustively this paradigm. Starting from a generic model of passive mode-locking based upon delay differential equations, we deduce the effective equations of motion for these LSs in a time-dependent current landscape.

  8. Leaf absorbance and photosynthesis

    Science.gov (United States)

    Schurer, Kees

    1994-01-01

    The absorption spectrum of a leaf is often thought to contain some clues to the photosynthetic action spectrum of chlorophyll. Of course, absorption of photons is needed for photosynthesis, but the reverse, photosynthesis when there is absorption, is not necessarily true. As a check on the existence of absorption limits we measured spectra for a few different leaves. Two techniques for measuring absorption have been used, viz. the separate determination of the diffuse reflectance and the diffuse transmittance with the leaf at a port of an integrating sphere and the direct determination of the non-absorbed fraction with the leaf in the sphere. In a cross-check both methods yielded the same results for the absorption spectrum. The spectrum of a Fuchsia leaf, covering the short-wave region from 350 to 2500 nm, shows a high absorption in UV, blue and red, the well known dip in the green and a steep fall-off at 700 nm. Absorption drops to virtually zero in the near infrared, with subsequent absorptions, corresponding to the water absorption bands. In more detailed spectra, taken at 5 nm intervals with a 5 nm bandwidth, differences in chlorophyll content show in the different depths of the dip around 550 nm and in a small shift of the absorption edge at 700 nm. Spectra for Geranium (Pelargonium zonale) and Hibiscus (with a higher chlorophyll content) show that the upper limit for photosynthesis can not be much above 700 nm. No evidence, however, is to be seen of a lower limit for photosynthesis and, in fact, some experiments down to 300 nm still did not show a decrease of the absorption although it is well recognized that no photosynthesis results with 300 nm wavelengths.

  9. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  10. Basic Semiconductor Physics

    CERN Document Server

    Hamaguchi, Chihiro

    2010-01-01

    This book presents a detailed description of the basic semiconductor physics. The reader is assumed to have a basic command of mathematics and some elementary knowledge of solid state physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. The reader can understand three different methods of energy band calculations, empirical pseudo-potential, k.p perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for full band Monte Carlo simulation are discussed. Experiments and theoretical analysis of cyclotron resonance are discussed in detail because the results are essential to the understanding of semiconductor physics. Optical and transport properties, magneto-transport, two dimensional electron gas transport (HEMT and MOSFET), and quantum transport are reviewed, explaining optical transition, electron phonon interactions, electron mob...

  11. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  12. Iron Pyrite Absorbers for Solar Photovoltaic Energy Conversion

    OpenAIRE

    Limpinsel, Moritz

    2015-01-01

    Iron pyrite (cubic FeS2) is an earth-abundant, non-toxic semiconductor with great potential as an absorber material in future large-scale deployment of solar photovoltaic panels.The surprisingly small photo-voltage generated by this material (< 0.2 V) has limited itssolar cell efficiency and prevented its commercial development to date. The origin of thislimitation has been discussed over the past 30 years, and is addressed here. Electrical measurements of high-purity single crystals are used...

  13. Architectures for Improved Organic Semiconductor Devices

    Science.gov (United States)

    Beck, Jonathan H.

    Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes

  14. Semiconductor Photocatalysis for Chemoselective Radical Coupling Reactions.

    Science.gov (United States)

    Kisch, Horst

    2017-04-18

    Photocatalysis at semiconductor surfaces is a growing field of general photocatalysis because of its importance for the chemical utilization of solar energy. By analogy with photoelectrochemistry the basic mechanism of semiconductor photocatalysis can be broken down into three steps: photogenerated formation of surface redox centers (electron-hole pairs), interfacial electron transfer from and to substrates (often coupled with proton-transfer), and conversion of primary redox intermediates into the products. Sun driven water cleavage and carbon dioxide fixation are still in the state of basic research whereas aerial degradation reactions of pollutants have reached practical application for the cleaning of air. In addition, a great variety of organic transformations (not syntheses) have been reported. They include cis-trans isomerizations, valence isomerizations, cycloaddition reactions, intramolecular or intermolecular C-N and C-C couplings, partial oxidations, and reductions. In all cases, well-known products were formed but very rarely also isolated. As compared to conventional homogeneous organic synthesis, the photocatalytic reaction mode is of no advantage, although the opposite is quite often claimed in the literature. It is also noted that a high quantum yield does not implicate a high product yield, since it is measured at very low substrate conversion in order to minimize secondary photoreactions. That is especially important in semiconductor photocatalysis since photocorrosion of the photocatalyst often prevents long-time irradiation, as is the case for colloidal metal sulfide semiconductors, which in general are photochemically too unstable to be used in synthesis. In this Account, we first classify the numerous organic photoreactions catalyzed by semiconductor powders. The classification is based on easily obtainable experimental facts, namely the nature of the light absorbing reaction component and the reaction stoichiometry. Next we discuss the

  15. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  16. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  17. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  18. Optical processes in semiconductors

    CERN Document Server

    Pankove, Jacques I

    1975-01-01

    Based on a series of lectures at Berkeley, 1968-1969, this is the first book to deal comprehensively with all of the phenomena involving light in semiconductors. The author has combined, for the graduate student and researcher, a great variety of source material, journal research, and many years of experimental research, adding new insights published for the first time in this book.Coverage includes energy states in semiconductors and their perturbation by external parameters, absorption, relationships between optical constants, spectroscopy, radiative transitions, nonradiative recombination

  19. Growth of photovoltaic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Yablonovitch, E. (Bell Communications Research, Red Bank, NJ (United States)); Stringfellow, G.B. (Univ. of Utah, Salt Lake City (United States)); Greene, J.E. (Univ. of Illinois, Urbana (United States))

    1993-01-01

    We assess the opportunities for improving the quality and lowering the cost of thin crystalline semiconductor films for photovoltaics. We find that novel growth and processing methods can lower the cost of crystalline semiconductor films to satisfy the economic conditions for a major expansion of the photovoltaic industry. The research requirements are in the areas of novel precursors for vapor phase growth, atomic layer epitaxy for unprecedented control, and the requirement for novel in situ and ex situ probes to ensure that the new growth methods are producing the utmost in photovoltaic material quality. 42 refs.

  20. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  1. Key techniques for space-based solar pumped semiconductor lasers

    Science.gov (United States)

    He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

    2014-12-01

    In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

  2. Experimental Demonstration and Theoretical Analysis of Slow Light in a Semiconductor Waveguide at GHz Frequencies

    DEFF Research Database (Denmark)

    Mørk, Jesper; Kjær, Rasmus; Poel, Mike van der

    2005-01-01

    Experimental demonstration and theoretical analysis of slow light in a semiconductor waveguide at GHz frequencies slow-down of light by a factor of two in a semiconductor waveguide at room temperature with a bandwidth of 16.7 GHz using the effect of coherent pulsations of the carrier density. The......-explained by a model accounting for the absorption saturation in the waveguide, when using a lifetime that depends on the reverse bias....

  3. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  4. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  5. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz nonlinear......In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... is determined by (but not equal to) the electron momentum relaxation rate. Single cycle pulses of light, irrespective of the frequency range to which they belong, inherently have an ultrabroadband spectrum covering many octaves of frequencies. Unlike the single-cycle pulses in optical domain, the THz pulses can...... be easily sampled with sub-cycle resolution using conventional femtosecond lasers. This makes the THz pulses accessible model tools for direct observation of general nonlinear optical phenomena occurring in the single-cycle regime....

  6. Physics of semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Prew, B.A.

    1975-09-01

    The properties of semiconductors which make them important in the electronic devices industry, and how these properties are controlled by doping, are described. The physics and applications of p-n and other junction devices, and of bulk effect devices are discussed. Avalanche devices, optical devices, solar cells, Schottky barriers, MOS devices, heterojunctions, photoconductors, and transferred electron devices are considered.

  7. Defects in semiconductor nanostructures

    Indian Academy of Sciences (India)

    11] A detailed review article of defects in semiconductor nanostructures is currently under preparation. [12] V Ranjan and Vijay A Singh, J. Appl. Phys. 89, 6415 (2001). [13] V Ranjan, R K Pandey, Manoj K Harbola and Vijay A Singh, Phys. Rev.

  8. Controlling light absorption in charge-separating core/shell semiconductor nanocrystals.

    Science.gov (United States)

    Mahadevu, Rekha; Yelameli, Aniruddha R; Panigrahy, Bharati; Pandey, Anshu

    2013-12-23

    Semiconductor nanocrystals of different formulations have been extensively studied for use in thin-film photovoltaics. Materials used in such devices need to satisfy the stringent requirement of having large absorption cross sections. Hence, type-II semiconductor nanocrystals that are generally considered to be poor light absorbers have largely been ignored. In this article, we show that type-II semiconductor nanocrystals can be tailored to match the light-absorption abilities of other types of nanostructures as well as bulk semiconductors. We synthesize type-II ZnTe/CdS core/shell nanocrystals. This material is found to exhibit a tunable band gap as well as absorption cross sections that are comparable to CdTe. This result has significant implications for thin-film photovoltaics, where the use of type-II nanocrystals instead of pure semiconductors can improve charge separation while also providing a much needed handle to regulate device composition.

  9. Theory of graphene saturable absorption

    Science.gov (United States)

    Marini, A.; Cox, J. D.; García de Abajo, F. J.

    2017-03-01

    Saturable absorption is a nonperturbative nonlinear optical phenomenon that plays a pivotal role in the generation of ultrafast light pulses. Here we show that this effect emerges in graphene at unprecedentedly low light intensities, thus opening avenues to new nonlinear physics and applications in optical technology. Specifically, we theoretically investigate saturable absorption in extended graphene by developing a semianalytical nonperturbative single-particle approach, describing electron dynamics in the atomically-thin material using the two-dimensional Dirac equation for massless Dirac fermions, which is recast in the form of generalized Bloch equations. By solving the electron dynamics nonperturbatively, we account for both interband and intraband contributions to the intensity-dependent saturated conductivity and conclude that the former dominates regardless of the intrinsic doping state of the material. We obtain results in qualitative agreement with atomistic quantum-mechanical simulations of graphene nanoribbons including electron-electron interactions, finite-size, and higher-band effects. Remarkably, such effects are found to affect mainly the linear absorption, while the predicted saturation intensities are in good quantitative agreement in the limit of extended graphene. Additionally, we find that the modulation depth of saturable absorption in graphene can be electrically manipulated through an externally applied gate voltage. Our results are relevant for the development of graphene-based optoelectronic devices, as well as for applications in mode-locking and random lasers.

  10. Reusable collapsible impact energy absorber

    Energy Technology Data Exchange (ETDEWEB)

    Alghamdi, A.A.A. [Dept. of Mechanical Engineering, King Abdulaziz Univ., Jeddah (Saudi Arabia)

    2003-07-01

    In this paper experimental study of plastic deformation of aluminum frusta when reinverted is presented. Effects of changing the angle of frustum as well as frustum wall thickness on the absorbed energy are investigated. The details of the experimental plastic inversion and reinversion are given. Obtained results show that it is possible to use the inverted aluminum frusta several times, thus they are reusable collapsible absorbers. (orig.)

  11. Perfect selective metamaterial solar absorbers.

    Science.gov (United States)

    Wang, Hao; Wang, Liping

    2013-11-04

    In this work, we numerically investigate the radiative properties of metamaterial nanostructures made of two-dimensional tungsten gratings on a thin dielectric spacer and an opaque tungsten film from UV to mid-infrared region as potential selective solar absorbers. The metamaterial absorber with single-sized tungsten patches exhibits high absorptance in the visible and near-infrared region due to several mechanisms such as surface plasmon polaritons, magnetic polaritons, and intrinsic bandgap absorption of tungsten. Geometric effects on the resonance wavelengths and the absorptance spectra are studied, and the physical mechanisms are elucidated in detail. The absorptance could be further enhanced in a broader spectral range with double-sized metamaterial absorbers. The total solar absorptance of the optimized metamaterial absorbers at normal incidence could be more than 88%, while the total emittance is less than 3% at 100°C, resulting in total photon-to-heat conversion efficiency of 86% without any optical concentration. Moreover, the metamaterial solar absorbers exhibit quasi-diffuse behaviors as well as polarization independence. The results here will facilitate the design of novel highly efficient solar absorbers to enhance the performance of various solar energy conversion systems.

  12. Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

    Directory of Open Access Journals (Sweden)

    S. Tongay

    2012-01-01

    Full Text Available Using current-voltage (I-V, capacitance-voltage (C-V, and electric-field-modulated Raman measurements, we report on the unique physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene and conventional semiconductors. When chemical-vapor-deposited graphene is transferred onto n-type Si, GaAs, 4H-SiC, and GaN semiconductor substrates, there is a strong van-der-Waals attraction that is accompanied by charge transfer across the interface and the formation of a rectifying (Schottky barrier. Thermionic-emission theory in conjunction with the Schottky-Mott model within the context of bond-polarization theory provides a surprisingly good description of the electrical properties. Applications can be made to sensors, where in forward bias there is exponential sensitivity to changes in the Schottky-barrier height due to the presence of absorbates on the graphene, and to analog devices, for which Schottky barriers are integral components. Such applications are promising because of graphene’s mechanical stability, its resistance to diffusion, its robustness at high temperatures, and its demonstrated capability to embrace multiple functionalities.

  13. Pulse delay measurements in cascaded quantum well gain and absorber media

    DEFF Research Database (Denmark)

    Hansen, Per Lunnemann; Poel, Mike van der; Yvind, Kresten

    2010-01-01

    . This is effectively avoided with the cascaded waveguide configuration, where it is demonstrated viable achieving a net pulse delay while maintaining a transmission of unity. For both type of devices, a pulse advancement is observed, at large pulse energies, that existing models are unable to account for.......A tunable delay of ultrashort laser pulses in semiconductor waveguide structures are demonstrated in cascaded amplifying and absorbing semiconductor waveguides and compared with a single sectioned waveguide. The single sectioned waveguide shows a low transmission at the maximum delay...

  14. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  15. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  16. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  17. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  18. Infrared Semiconductor Metamaterials

    Science.gov (United States)

    2016-09-01

    AFRL-AFOSR-VA-TR-2016-0310 Infrared Semiconductor Metamaterials Jon Schuller UNIVERSITY OF CALIFORNIA SANTA BARBARA 3227 CHEADLE HL SANTA BARBARA, CA...S) AND ADDRESS(ES) University of California , Santa Barbara Office of Research, 3227 Cheadle Hall Santa Barbara, CA 93106-2050 8. PERFORMING...Using Heterojunction Resonators. Advanced Optical Materials, available online (2016). New discoveries, inventions, or patent disclosures: Do you have

  19. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  20. Hole crystallization in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bonitz, M [Institut fuer Theoretische Physik und Astrophysik, Christian-Albrechts-Universitaet Kiel, 24098 Kiel (Germany); Filinov, V S [Institut fuer Theoretische Physik und Astrophysik, Christian-Albrechts-Universitaet Kiel, 24098 Kiel (Germany); Fortov, V E [Institute for High Energy Density, Russian Academy of Sciences, Izhorskay 13/19, Moscow 127412 (Russian Federation); Levashov, P R [Institute for High Energy Density, Russian Academy of Sciences, Izhorskay 13/19, Moscow 127412 (Russian Federation); Fehske, H [Institut fuer Physik, Universitaet Greifswald, l7487 Greifswald (Germany)

    2006-04-28

    When electrons in a solid are excited to a higher energy band they leave behind a vacancy (hole) in the original band which behaves like a positively charged particle. Here we predict that holes can spontaneously order into a regular lattice in semiconductors with sufficiently flat valence bands. The critical hole to electron effective mass ratio required for this phase transition is found to be of the order of 80.

  1. Hole crystallization in semiconductors

    OpenAIRE

    Bonitz, M.; Filinov, V. S.; Fortov, V. E.; Levashov, P. R.; Fehske, H.

    2005-01-01

    When electrons in a solid are excited to a higher energy band they leave behind a vacancy (hole) in the original band which behaves like a positively charged particle. Here we predict that holes can spontaneously order into a regular lattice in semiconductors with sufficiently flat valence bands. The critical hole to electron effective mass ratio required for this phase transition is found to be of the order of 80.

  2. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  3. Additive manufacturing of RF absorbers

    Science.gov (United States)

    Mills, Matthew S.

    The ability of additive manufacturing techniques to fabricate integrated electromagnetic absorbers tuned for specific radio frequency bands within structural composites allows for unique combinations of mechanical and electromagnetic properties. These composites and films can be used for RF shielding of sensitive electromagnetic components through in-plane and out-of-plane RF absorption. Structural composites are a common building block of many commercial platforms. These platforms may be placed in situations in which there is a need for embedded RF absorbing properties along with structural properties. Instead of adding radar absorbing treatments to the external surface of existing structures, which adds increased size, weight and cost; it could prove to be advantageous to integrate the microwave absorbing properties directly into the composite during the fabrication process. In this thesis, a method based on additive manufacturing techniques of composites structures with prescribed electromagnetic loss, within the frequency range 1 to 26GHz, is presented. This method utilizes screen printing and nScrypt micro dispensing to pattern a carbon based ink onto low loss substrates. The materials chosen for this study will be presented, and the fabrication technique that these materials went through to create RF absorbing structures will be described. The calibration methods used, the modeling of the RF structures, and the applications in which this technology can be utilized will also be presented.

  4. Electronically Switchable Broadband Metamaterial Absorber.

    Science.gov (United States)

    Lee, Dongju; Jeong, Heijun; Lim, Sungjoon

    2017-07-07

    In this study, the novel electronically switchable broadband metamaterial absorber, using a PIN diode, is proposed. The unit cell of the absorber was designed with a Jerusalem-cross resonator and an additive ring structure, based on the FR-4 dielectric substrate. Chip resistors and PIN diodes were used to provide both a broadband characteristic and a switching capability. To satisfy the polarization insensitivity, the unit cell was designed as a symmetrical structure, including the DC bias network, electronic devices, and conductor patterns. The performance of the proposed absorber was verified using full-wave simulation and measurements. When the PIN diode was in the ON state, the proposed absorber had a 90% absorption bandwidth from 8.45-9.3 GHz. Moreover, when the PIN diode was in the OFF state, the 90% absorption bandwidth was 9.2-10.45 GHz. Therefore, the absorption band was successfully switched between the low-frequency band and the high-frequency band as the PIN diode was switched between the ON and OFF states. Furthermore, the unit cell of the proposed absorber was designed as a symmetrical structure, and its performance showed insensitivity with respect to the polarization angle.

  5. Carbon Absorber Retrofit Equipment (CARE)

    Energy Technology Data Exchange (ETDEWEB)

    Klein, Eric [Neumann Systems Group, Incorporated, Colorado Springs, CO (United States)

    2015-12-23

    During Project DE-FE0007528, CARE (Carbon Absorber Retrofit Equipment), Neumann Systems Group (NSG) designed, installed and tested a 0.5MW NeuStream® carbon dioxide (CO2) capture system using the patented NeuStream® absorber equipment and concentrated (6 molal) piperazine (PZ) as the solvent at Colorado Springs Utilities’ (CSU’s) Martin Drake pulverized coal (PC) power plant. The 36 month project included design, build and test phases. The 0.5MW NeuStream® CO2 capture system was successfully tested on flue gas from both coal and natural gas combustion sources and was shown to meet project objectives. Ninety percent CO2 removal was achieved with greater than 95% CO2product purity. The absorbers tested support a 90% reduction in absorber volume compared to packed towers and with an absorber parasitic power of less than 1% when configured for operation with a 550MW coal plant. The preliminary techno-economic analysis (TEA) performed by the Energy and Environmental Research Center (EERC) predicted an over-the-fence cost of $25.73/tonne of CO2 captured from a sub-critical PC plant.

  6. Largely Enhanced Saturable Absorption of a Complex of Plasmonic and Molecular-Like Au Nanocrystals

    Science.gov (United States)

    Ding, Si-Jing; Nan, Fan; Yang, Da-Jie; Liu, Xiao-Li; Wang, Ya-Lan; Zhou, Li; Hao, Zhong-Hua; Wang, Qu-Quan

    2015-01-01

    A saturable absorber is a nonlinear functional material widely used in laser and photonic nanodevices. Metallic nanostructures have prominent saturable absorption (SA) at the plasmon resonance frequency owing to largely enhanced ground state absorption. However, the SA of plasmonic metal nanostructures is hampered by excited-state absorption processes at very high excitation power, which usually leads to a changeover from SA to reversed SA (SA→RSA). Here, we demonstrate tunable nonlinear absorption behaviours of a nanocomplex of plasmonic and molecular-like Au nanocrystals. The SA→RSA process is efficiently suppressed, and the stepwise SA→SA process is fulfilled owing to energy transfer in the nanocomplex. Our observations offer a strategy for preparation of the saturable absorber complex and have prospective applications in liquid lasers as well as one-photon nonlinear nanodevices. PMID:25875139

  7. Robust Topological Terahertz Circuits using Semiconductors

    CERN Document Server

    Bahari, Babak; Kanté, Boubacar

    2016-01-01

    Topological Insulator-based devices can transport electrons/photons at the surfaces of materials without any back reflections, even in the presence of obstacles. Topological properties have recently been studied using non-reciprocal materials such as gyromagnetics or using bianisotropy. However, these effects usually saturate at optical frequencies and limit our ability to scale down devices. In order to implement topological devices that we introduce in this paper for the terahertz range, we show that semiconductors can be utilized via their cyclotron resonance in combination with small magnetic fields. We propose novel terahertz operating devices such as the topological tunable power splitter and the topological circulator. This work opens new perspectives in the design of terahertz integrated devices and circuits with high functionality.

  8. Slow light in a semiconductor waveguide for true-time delay applications in microwave photonics

    DEFF Research Database (Denmark)

    Öhman, Filip; Yvind, Kresten; Mørk, Jesper

    2007-01-01

    We have investigated the slowand fast light properties of a semiconductor waveguide device employing concatenated gain and absorber sections. This letter presents the experimental results as well as theoretical modeling. A large phase shift of 110 and a true-time delay of more than 150 ps...

  9. Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics.

    Science.gov (United States)

    Jariwala, Deep; Davoyan, Artur R; Tagliabue, Giulia; Sherrott, Michelle C; Wong, Joeson; Atwater, Harry A

    2016-09-14

    We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.

  10. Polarization insensitive terahertz metamaterial absorber.

    Science.gov (United States)

    Grant, J; Ma, Y; Saha, S; Lok, L B; Khalid, A; Cumming, D R S

    2011-04-15

    We present the simulation, implementation, and measurement of a polarization insensitive resonant metamaterial absorber in the terahertz region. The device consists of a metal/dielectric-spacer/metal structure allowing us to maximize absorption by varying the dielectric material and thickness and, hence, the effective electrical permittivity and magnetic permeability. Experimental absorption of 77% and 65% at 2.12 THz (in the operating frequency range of terahertz quantum cascade lasers) is observed for a spacer of polyimide or silicon dioxide respectively. These metamaterials are promising candidates as absorbing elements for thermally based terahertz imaging.

  11. Soliton molecules in a fiber laser mode-locked by a graphene-based saturable absorber

    Science.gov (United States)

    Gao, Bo; Huo, Jiayu; Wu, Ge; Tian, Xiaojian

    2015-07-01

    We have experimentally investigated a novel kind of soliton molecule in a graphene-based mode-locking fiber laser with anomalous dispersion. The soliton molecule exhibits a stable rectangular profile on the oscilloscope, whereas it shows randomly distributed peaks in the autocorrelation trace, which indicates that the temporal separation of pulses in the molecule is varying all the time. The optical spectrum is modulated with a depth of about 7 dB over the whole profile, induced by the interaction of the intra-molecule solitons. The experimental results demonstrate that solitons in the pulse molecule oscillate randomly in temporal domain and the neighboring molecules are temporally separated by a fundamental cavity repetition rate, which is very different from that of the multi-solitons or bound-state solitons.

  12. Electrodes for Semiconductor Gas Sensors

    Science.gov (United States)

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  13. Method of passivating semiconductor surfaces

    Science.gov (United States)

    Wanlass, M.W.

    1990-06-19

    A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  14. Saturation of the turbulent dynamo.

    Science.gov (United States)

    Schober, J; Schleicher, D R G; Federrath, C; Bovino, S; Klessen, R S

    2015-08-01

    The origin of strong magnetic fields in the Universe can be explained by amplifying weak seed fields via turbulent motions on small spatial scales and subsequently transporting the magnetic energy to larger scales. This process is known as the turbulent dynamo and depends on the properties of turbulence, i.e., on the hydrodynamical Reynolds number and the compressibility of the gas, and on the magnetic diffusivity. While we know the growth rate of the magnetic energy in the linear regime, the saturation level, i.e., the ratio of magnetic energy to turbulent kinetic energy that can be reached, is not known from analytical calculations. In this paper we present a scale-dependent saturation model based on an effective turbulent resistivity which is determined by the turnover time scale of turbulent eddies and the magnetic energy density. The magnetic resistivity increases compared to the Spitzer value and the effective scale on which the magnetic energy spectrum is at its maximum moves to larger spatial scales. This process ends when the peak reaches a characteristic wave number k☆ which is determined by the critical magnetic Reynolds number. The saturation level of the dynamo also depends on the type of turbulence and differs for the limits of large and small magnetic Prandtl numbers Pm. With our model we find saturation levels between 43.8% and 1.3% for Pm≫1 and between 2.43% and 0.135% for Pm≪1, where the higher values refer to incompressible turbulence and the lower ones to highly compressible turbulence.

  15. Saturation of Van Allen's belts

    CERN Document Server

    Le Bel, E

    2002-01-01

    The maximum number of electrons that can be trapped in van Allen's belts has been evaluated at CEA-DAM more precisely than that commonly used in the space community. The modelization that we have developed allows to understand the disagreement (factor 50) observed between the measured and predicted electrons flux by US satellites and theory. This saturation level allows sizing-up of the protection on a satellite in case of energetic events. (authors)

  16. Theory of Pulse Train Amplification Without Patterning Effects in Quantum Dot Semiconductor Optical Amplifiers

    DEFF Research Database (Denmark)

    Uskov, Alexander V.; Berg, Tommy Winther; Mørk, Jesper

    2004-01-01

    A theory for pulse amplification and saturation in quantum dot (QD) semiconductor optical amplifiers (SOAs) is developed. In particular, the maximum bit rate at which a data stream of pulses can be amplified without significant patterning effects is investigated. Simple expressions are derived...

  17. Nonlinear polarization rotation induced by ultrashort optical pulses in a semiconductor optical amplifier

    NARCIS (Netherlands)

    Yang, X.X.; Lenstra, D.; Khoe, G.D.; Dorren, H.J.S.

    2003-01-01

    We use a new rate-equation model for the propagation of sub-picosecond polarized optical pulses in a semiconductor optical amplifier (SOA). This model is based on the decomposition of the polarized optical field into TE and TM components that interact via the gain saturation, and accounts for

  18. High-field Faraday rotation in II-VI-based semimagnetic semiconductors

    NARCIS (Netherlands)

    Savchuk, AI; Fediv, [No Value; Nikitin, PI; Perrone, A; Tatzenko, OM; Platonov, VV

    The effects of d-d exchange interaction have been studied by measuring high-field Faraday rotation in II-VI-based semimagnetic semiconductors. For Cd1-xMnxTe crystals with x = 0.43 and at room temperature a saturation in magnetic field dependence of the Faraday rotation has been observed. In the

  19. Thin wideband absorber with optimal thickness

    OpenAIRE

    Kazemzadeh, Alireza

    2010-01-01

    The known methods for designing nonmagnetic absorbers usually aim for either the reduction of total thickness or increase of absorption bandwidth by sacrificing the other parameter. The conventional circuit analog absorbers aim for large bandwidths whereas the newly proposed meta-material or optimized geometry designs try to reduce the thickness of the absorber. By the aid of the capacitive circuit absorber approach, an optimal method for designing thin absorbers with practical bandwidths is...

  20. Semiconductor A3B5 nanostructures for infrared femtosecond lasers

    OpenAIRE

    Rubtsova, N. N.; Kochubei, A. A.; Kovalyov, A. A.; Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R.; Shamirzaev, T. S.; Borisov, G. M.; V. E. Kisel; Kuleshov, N.V.; Kuril'chik, S. V.; Buganov, O. V.; Tikhomirov, S. A.

    2013-01-01

    Two techniques were suggested and tested for the recovery time shortening of saturable absorbers on a base of A3B5 compounds including quantum wells. The first one, proposed by authors, is the sample post-growth treatment by UV laser radiation; it implied generation of point defects, which, in its turn, led to electron-hole recombination acceleration and to recovery time shortening by an order of magnitude and more. Another technique based on special design of barriers gave promising results ...

  1. Cavity Light Bullets in Passively Mode-Locked Semiconductor Lasers

    Science.gov (United States)

    Javaloyes, J.

    2016-01-01

    We demonstrate the existence of stable three-dimensional dissipative localized structures in the output of a laser coupled to a distant saturable absorber. These phase invariant cavity light bullets are individually addressable and can be envisioned for three-dimensional optical information storage. An effective theory provides for an intuitive picture and allows us to relate their formation to the morphogenesis of static spatial autosolitons and temporal cellular patterns.

  2. Oil and fat absorbing polymers

    Science.gov (United States)

    Marsh, H. E., Jr. (Inventor)

    1977-01-01

    A method is described for forming a solid network polymer having a minimal amount of crosslinking for use in absorbing fats and oils. The polymer remains solid at a swelling ratio in oil or fat of at least ten and provides an oil absorption greater than 900 weight percent.

  3. Absorbing-and-diffusing coating

    OpenAIRE

    Tkalich, N. V.; Mokeev, Yu. G.; Onipko, A. F.; Vashchenko, V. F.; Topchev, M. D.; Glebov, V. V.; Ivanchenko, Dmitrij D.; Kolchigin, Nikolay N.; Yevdokimov, V. V.

    2003-01-01

    The paper presents the results of complex experimental research of the absorbing-and-diffusing material "Contrast". It is shown to be an efficient wideband-camouflage material in the radiolocation and the video bands. Ways for improving the material characteristics are outlined.

  4. Electron transfer at sensitized semiconductor electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Spitler, M.T.

    1977-03-01

    Electron transfer from the excited state of sensitizing dyes to the conduction band of semiconductors has been studied through photoelectrochemical techniques. Two systems were analyzed in detail: rhodamine B on ZnO and rose bengal on TiO/sub 2/. Prior to electrochemical experimentation, the adsorption characteristics of these dyes were investigated using ZnO, ZnS, and TiO/sub 2/ single crystals as substrates. Absorbance measurements of the adsorbed dye were taken as a function of the solution concentration of the dye. Adsorption isotherms heats of adsorption were also established; they were similar to literature data reported for adsorption of these dyes on powdered substrates. Using the absorbance data, the quantum efficiency for photoinjection of electrons from rhodamine B into a ZnO electrode was determined to be 2.7 x 10/sup -2/. This value was independent of the dye surface concentration down to 50% coverage of the electrode. With the assumption that not all of the rhodamine B adsorbed on the electrode has the same rate of electron injection, a kinetic model for the time decay of the photocurrent was developed; data were analyzed according to this theory. A rate constant for photoreduction of the adsorbed dye was determined for the reducing agents. 86 references.

  5. Transition to Turbulent Dynamo Saturation

    Science.gov (United States)

    Seshasayanan, Kannabiran; Gallet, Basile; Alexakis, Alexandros

    2017-11-01

    While the saturated magnetic energy is independent of viscosity in dynamo experiments, it remains viscosity dependent in state-of-the-art 3D direct numerical simulations (DNS). Extrapolating such viscous scaling laws to realistic parameter values leads to an underestimation of the magnetic energy by several orders of magnitude. The origin of this discrepancy is that fully 3D DNS cannot reach low enough values of the magnetic Prandtl number Pm. To bypass this limitation and investigate dynamo saturation at very low Pm, we focus on the vicinity of the dynamo threshold in a rapidly rotating flow: the velocity field then depends on two spatial coordinates only, while the magnetic field consists of a single Fourier mode in the third direction. We perform numerical simulations of the resulting set of reduced equations for Pm down to 2 ×10-5. This parameter regime is currently out of reach to fully 3D DNS. We show that the magnetic energy transitions from a high-Pm viscous scaling regime to a low-Pm turbulent scaling regime, the latter being independent of viscosity. The transition to the turbulent saturation regime occurs at a low value of the magnetic Prandtl number, Pm ≃10-3 , which explains why it has been overlooked by numerical studies so far.

  6. SATURATED PICRIC ACID PREVENTS AUTOPHAGIA

    Directory of Open Access Journals (Sweden)

    V Rahimi-Movaghar

    2008-08-01

    Full Text Available "nThe dysesthesia and paresthesia that occurs in laboratory rats after spinal cord injury (SCI results in autophagia. This self-destructive behavior interferes with functional assessments in designed studies and jeopardizes the health of the injured rat. In this study, we evaluated role of saturated picric acid in the prevention of autophagia and self-mutilation. All rats were anesthetized with an intraperitoneal injection of a mixture of ketamine (100 mg/kg and xylazine (10 mg/kg for the SCI procedures. In the first 39 rats, no solution applied to the hind limbs, but in the next 26 cases, we smeared the saturated picric acid on the tail, lower extremities, pelvic, and abdomen of the rats immediately after SCI. In the rats without picric acid, 23 rats died following autophagia, but in the 26 rats with picric acid, there was no autophagia (P < 0.001. Picric acid side effects in skin and gastrointestinal signs such as irritation, redness and diarrhea were not seen in any rat. Saturated picric acid is a topical solution that if used appropriately and carefully, might be safe and effectively prevents autophagia and self-mutilation. When the solution is applied to the lower abdomen and limbs, we presume that its bitterness effectively prevents the rat from licking and biting the limb.

  7. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  8. Hydrogen in semiconductors

    CERN Document Server

    Pankove, Jacques I

    1991-01-01

    Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed cove

  9. Physics of Organic Semiconductors

    CERN Document Server

    Brütting, Wolfgang

    2005-01-01

    Filling the gap in the literature currently available, this book presents an overview of our knowledge of the physics behind organic semiconductor devices. Contributions from 18 international research groups cover various aspects of this field, ranging from the growth of organic layers and crystals, their electronic properties at interfaces, their photophysics and electrical transport properties to the application of these materials in such different devices as organic field-effect transistors, photovoltaic cells and organic light-emitting diodes. From the contents:. * Excitation Dynamics in O

  10. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  11. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  12. Synthesis and characterization of a new organic semiconductor material

    Energy Technology Data Exchange (ETDEWEB)

    Tiffour, Imane [Laboratoire de Génie Physique, Département de Physique, Université de Tiaret, Tiaret 14000 (Algeria); Faculté des Sciences et Technologies, Université Mustapha Stambouli, Mascara 29000 (Algeria); Dehbi, Abdelkader [Laboratoire de Génie Physique, Département de Physique, Université de Tiaret, Tiaret 14000 (Algeria); Mourad, Abdel-Hamid I., E-mail: ahmourad@uaeu.ac.ae [Mechanical Engineering Department, Faculty of Engineering, United Arab Emirates University, Al-Ain, P.O. Box 15551 (United Arab Emirates); Belfedal, Abdelkader [Faculté des Sciences et Technologies, Université Mustapha Stambouli, Mascara 29000 (Algeria); LPCMME, Département de Physique, Université d' Oran Es-sénia, 3100 Oran (Algeria)

    2016-08-01

    The objective of this study is to create an ideal mixture of Acetaminophen/Curcumin leading to a new and improved semiconductor material, by a study of the electrical, thermal and optical properties. This new material will be compared with existing semiconductor technology to discuss its viability within the industry. The electrical properties were investigated using complex impedance spectroscopy and optical properties were studied by means of UV-Vis spectrophotometry. The electric conductivity σ, the dielectric constant ε{sub r}, the activation energy E{sub a}, the optical transmittance T and the gap energy E{sub g} have been investigated in order to characterize our organic material. The electrical conductivity of the material is approximately 10{sup −5} S/m at room temperature, increasing the temperature causes σ to increase exponentially to approximately 10{sup −4} S/m. The activation energy obtained for the material is equal to 0.49 ± 0.02 ev. The optical absorption spectra show that the investigating material has absorbance in the visible range with a maximum wavelength (λ{sub max}) 424 nm. From analysis, the absorption spectra it was found the optical band gap equal to 2.6 ± 0.02 eV and 2.46 ± 0.02 eV for the direct and indirect transition, respectively. In general, the study shows that the developed material has characteristics of organic semiconductor material that has a promising future in the field of organic electronics and their potential applications, e.g., photovoltaic cells. - Highlights: • Development of a new organic acetaminophen/Curcumin semiconductor material. • The developed material has characteristics of an organic semiconductor. • It has electrical conductivity comparable to available organic semiconductors. • It has high optical transmittance and low permittivity/dielectric constant.

  13. Doped semiconductor nanocrystal junctions

    Energy Technology Data Exchange (ETDEWEB)

    Borowik, Ł.; Mélin, T., E-mail: thierry.melin@isen.iemn.univ-lille1.fr [Institut d’Electronique, de Microélectronique et de Nanotechnologie, CNRS-UMR8520, Avenue Poincaré, F-59652 Villeneuve d’Ascq (France); Nguyen-Tran, T.; Roca i Cabarrocas, P. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS-UMR7647, Ecole Polytechnique, F-91128 Palaiseau (France)

    2013-11-28

    Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (N{sub D}≈10{sup 20}−10{sup 21}cm{sup −3}) silicon nanocrystals (NCs) in the 2–50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that the charge transfer from doped NCs towards a two-dimensional layer experimentally follows a simple phenomenological law, corresponding to formation of an interface dipole linearly increasing with the NC diameter. This feature leads to analytically predictable junction properties down to quantum size regimes: NC depletion width independent of the NC size and varying as N{sub D}{sup −1/3}, and depleted charge linearly increasing with the NC diameter and varying as N{sub D}{sup 1/3}. We thus establish a “nanocrystal counterpart” of conventional semiconductor planar junctions, here however valid in regimes of strong electrostatic and quantum confinements.

  14. Squeezed light in semiconductors

    CERN Document Server

    Ward, M B

    2001-01-01

    Experimental evidence is presented for the generation of photon-number squeezed states of light as a result of multi-photon absorption. Photon-number squeezing as a result of non-linear absorption has long been predicted and results have been obtained utilising two very different material systems: (i) an AIGaAs waveguide in which high optical intensities can be maintained over a relatively long interaction length of 2 mm; (ii) the organic polymer p-toluene sulphonate polydiacetylene that is essentially a one-dimensional semiconductor possessing a highly nonlinear optical susceptibility. The resulting nonlinear absorption is shown to leave the transmitted light in a state that is clearly nonclassical, exhibiting photon-number fluctuations below the shot-noise limit. Tuning the laser wavelength across the half-bandgap energy has enabled a comparison between two- and three-photon processes in the semiconductor waveguide. The correlations created between different spectral components of a pulsed beam of light as ...

  15. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  16. Variable temperature semiconductor film deposition

    Science.gov (United States)

    Li, X.; Sheldon, P.

    1998-01-27

    A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  17. Process for producing chalcogenide semiconductors

    Science.gov (United States)

    Noufi, R.; Chen, Y.W.

    1985-04-30

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  18. Semiconductor materials and their properties

    NARCIS (Netherlands)

    Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

    2017-01-01

    Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

  19. Semiconductor photocatalysis principles and applications

    CERN Document Server

    Kisch, Horst

    2014-01-01

    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  20. Luminescence studies of semiconductor electrodes

    NARCIS (Netherlands)

    Kelly, J.J.; Kooij, Ernst S.; Meulenkamp, E.A.

    1999-01-01

    In this paper we review our recent results of in-situ luminescence studies of semiconductor electrodes. Three classes of materials are considered: single crystal compound semiconductors, porous silicon and semiconducting oxides doped with luminescent ions. We show how photoluminescence (PL) and

  1. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  2. Metalloporphyrin-modified semiconductors for solar fuel production.

    Science.gov (United States)

    Khusnutdinova, D; Beiler, A M; Wadsworth, B L; Jacob, S I; Moore, G F

    2017-01-01

    We report a direct one-step method to chemically graft metalloporphyrins to a visible-light-absorbing gallium phosphide semiconductor with the aim of constructing an integrated photocathode for light activating chemical transformations that include capturing, converting, and storing solar energy as fuels. Structural characterization of the hybrid assemblies is achieved using surface-sensitive spectroscopic methods, and functional performance for photoinduced hydrogen production is demonstrated via three-electrode electrochemical testing combined with photoproduct analysis using gas chromatography. Measurements of the total per geometric area porphyrin surface loadings using a cobalt-porphyrin based assembly indicate a turnover frequency ≥3.9 H2 molecules per site per second, representing the highest reported to date for a molecular-catalyst-modified semiconductor photoelectrode operating at the H+/H2 equilibrium potential under 1-sun illumination.

  3. Promoter analysis by saturation mutagenesis

    Directory of Open Access Journals (Sweden)

    Baliga Nitin

    2001-01-01

    Full Text Available Gene expression and regulation are mediated by DNA sequences, in most instances, directly upstream to the coding sequences by recruiting transcription factors, regulators, and a RNA polymerase in a spatially defined fashion. Few nucleotides within a promoter make contact with the bound proteins. The minimal set of nucleotides that can recruit a protein factor is called a cis-acting element. This article addresses a powerful mutagenesis strategy that can be employed to define cis-acting elements at a molecular level. Technical details including primer design, saturation mutagenesis, construction of promoter libraries, phenotypic analysis, data analysis, and interpretation are discussed.

  4. Insight into magnetorheological shock absorbers

    CERN Document Server

    Gołdasz, Janusz

    2015-01-01

    This book deals with magnetorheological fluid theory, modeling and applications of automotive magnetorheological dampers. On the theoretical side a review of MR fluid compositions and key factors affecting the characteristics of these fluids is followed by a description of existing applications in the area of vibration isolation and flow-mode shock absorbers in particular. As a majority of existing magnetorheological devices operates in a so-called flow mode a critical review is carried out in that regard. Specifically, the authors highlight common configurations of flow-mode magnetorheological shock absorbers, or so-called MR dampers that have been considered by the automotive industry for controlled chassis applications. The authors focus on single-tube dampers utilizing a piston assembly with one coil or multiple coils and at least one annular flow channel in the piston.

  5. Acoustic Properties of Absorbent Asphalts

    Science.gov (United States)

    Trematerra, Amelia; Lombardi, Ilaria

    2017-08-01

    Road traffic is one of the greater cause of noise pollution in urban centers; a prolonged exposure to this source of noise disturbs populations subjected to it. In this paper is reported a study on the absorbent coefficients of asphalt. The acoustic measurements are carried out with a impedance tube (tube of Kundt). The sample are measured in three conditions: with dry material (traditional), “wet” asphalt and “dirty” asphalt.

  6. Semiconductor radiation detector

    Science.gov (United States)

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  7. Semiconductor optoelectronic infrared spectroscopy

    CERN Document Server

    Hollingworth, A R

    2001-01-01

    level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore this technique has been shown that the inhomogeneous broadening of the photoluminescence spectrum is not purely affected by just size and composition. We suggest that other processes such as state occupancy, In roughing, and exciton binding energies may account for the extra energy. We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their futu...

  8. Semiconductor adiabatic qubits

    Energy Technology Data Exchange (ETDEWEB)

    Carroll, Malcolm S.; Witzel, Wayne; Jacobson, Noah Tobias; Ganti, Anand; Landahl, Andrew J.; Lilly, Michael; Nguyen, Khoi Thi; Bishop, Nathaniel; Carr, Stephen M.; Bussmann, Ezra; Nielsen, Erik; Levy, James Ewers; Blume-Kohout, Robin J.; Rahman, Rajib

    2016-12-27

    A quantum computing device that includes a plurality of semiconductor adiabatic qubits is described herein. The qubits are programmed with local biases and coupling terms between qubits that represent a problem of interest. The qubits are initialized by way of a tuneable parameter, a local tunnel coupling within each qubit, such that the qubits remain in a ground energy state, and that initial state is represented by the qubits being in a superposition of |0> and |1> states. The parameter is altered over time adiabatically or such that relaxation mechanisms maintain a large fraction of ground state occupation through decreasing the tunnel coupling barrier within each qubit with the appropriate schedule. The final state when tunnel coupling is effectively zero represents the solution state to the problem represented in the |0> and |1> basis, which can be accurately read at each qubit location.

  9. Investigation of electron mobility and saturation velocity limits in gallium nitride using uniaxial dielectric continuum model

    Science.gov (United States)

    Park, K.; Stroscio, M. A.; Bayram, C.

    2017-06-01

    Here we introduce a uniaxial dielectric continuum model with temperature-dependent phonon mode frequencies to study temperature- and orientation-dependent polar-optical-phonon limited electron mobility and saturation velocity in uniaxial semiconductors. The formalism for calculating electron scattering rates, momentum relaxation rates, and rate of energy change as a function of the electron kinetic energy and incident electron angle with respect to the c-axis are presented and evaluated numerically. Electron-longitudinal-optical-phonon interactions are shown to depend weakly on the electron incident angle, whereas the electron-transverse-optical-phonon interactions around the emission threshold energy are observed to depend strongest on the electron incident angle when varied from π/4 to π/2 (with respect to the c-axis). We provide electron mobility and saturation velocity limits in different GaN crystal orientations as a function of temperature and electron concentration. At room temperature and for an electron density of 5 × 1018 cm-3, electron mobility limit of ˜3200 cm2/V s and electron saturation velocity limit of 3.15 × 107 cm/s are calculated. Both GaN electron mobility and saturation velocity are observed to be governed by the longitudinal-optical-phonon interaction, and their directional anisotropy is shown to vary less than 5% as the electron incident angle with respect to the c-axis is varied from 0 to π/2. Overall, we develop a theoretical formalism for calculating anisotropic properties of uniaxial wurtzite semiconductors.

  10. Activation of molecular catalysts using semiconductor quantum dots

    Science.gov (United States)

    Meyer, Thomas J [Chapel Hill, NC; Sykora, Milan [Los Alamos, NM; Klimov, Victor I [Los Alamos, NM

    2011-10-04

    Photocatalytic materials based on coupling of semiconductor nanocrystalline quantum dots (NQD) and molecular catalysts. These materials have capability to drive or catalyze non-spontaneous chemical reactions in the presence of visible radiation, ultraviolet radiation, or both. The NQD functions in these materials as a light absorber and charge generator. Following light absorption, the NQD activates a molecular catalyst adsorbed on the surface of the NQD via transfer of one or more charges (either electrons or electron-holes) from the NQD to the molecular catalyst. The activated molecular catalyst can then drive a chemical reaction. A photoelectrolytic device that includes such photocatalytic materials is also described.

  11. Carbon dioxide absorber and regeneration assemblies useful for power plant flue gas

    Science.gov (United States)

    Vimalchand, Pannalal; Liu, Guohai; Peng, Wan Wang

    2012-11-06

    Disclosed are apparatus and method to treat large amounts of flue gas from a pulverized coal combustion power plant. The flue gas is contacted with solid sorbents to selectively absorb CO.sub.2, which is then released as a nearly pure CO.sub.2 gas stream upon regeneration at higher temperature. The method is capable of handling the necessary sorbent circulation rates of tens of millions of lbs/hr to separate CO.sub.2 from a power plant's flue gas stream. Because pressurizing large amounts of flue gas is cost prohibitive, the method of this invention minimizes the overall pressure drop in the absorption section to less than 25 inches of water column. The internal circulation of sorbent within the absorber assembly in the proposed method not only minimizes temperature increases in the absorber to less than 25.degree. F., but also increases the CO.sub.2 concentration in the sorbent to near saturation levels. Saturating the sorbent with CO.sub.2 in the absorber section minimizes the heat energy needed for sorbent regeneration. The commercial embodiments of the proposed method can be optimized for sorbents with slower or faster absorption kinetics, low or high heat release rates, low or high saturation capacities and slower or faster regeneration kinetics.

  12. Plasmonic titanium nitride nanostructures for perfect absorbers

    DEFF Research Database (Denmark)

    Guler, Urcan; Li, Wen-Wei; Kinsey, Nathaniel

    2013-01-01

    We propose a metamaterial based perfect absorber in the visible region, and investigate the performance of titanium nitride as an alternative plasmonic material. Numerical and experimental results reveal that titanium nitride performs better than gold as a plasmonic absorbing material...

  13. Sustainable composite super absorbents made from polysaccharides

    OpenAIRE

    Ye, Zhuoliang; Tang, Mi; Hong, Xiaoting; K. S. Hui

    2016-01-01

    Compared to traditional super absorbent polymers using raw materials from petrochemical industry, natural polymer absorbents are more favorable because they are sustainable and biodegradable. In this study, composite absorbents were developed by crosslinking carrageenan with sodium alginate using calcium chloride. Effect of composition on absorption was tested. Absorption was improved by increasing carrageenan content. The super absorbent exhibited the maximal swelling ratio of 13.1 g/g in 0....

  14. Semiconductor-superconductor optoelectronic devices

    Science.gov (United States)

    Bouscher, Shlomi; Panna, Dmitry; Hayat, Alex

    2017-10-01

    Devices combining superconductors with semiconductors offer a wide range of applications, particularly in the growing field of quantum information processing. This is due to their ability to take advantage of both the extensive knowledge gathered in the field of semiconductors and the unique quantum properties of superconductors. This results in novel device concepts, such as structures generating and detecting entangled photon pairs as well as novel optical gain and laser realizations. In this review, we discuss the fundamental concepts and the underlying physical phenomena of superconductor-semiconductor optoelectronics as well as practical device implementations.

  15. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  16. The use of saturation in qualitative research.

    Science.gov (United States)

    Walker, Janiece L

    2012-01-01

    Understanding qualitative research is an important component of cardiovascular nurses' practice and allows them to understand the experiences, stories, and perceptions of patients with cardiovascular conditions. In understanding qualitative research methods, it is essential that the cardiovascular nurse understands the process of saturation within qualitative methods. Saturation is a tool used for ensuring that adequate and quality data are collected to support the study. Saturation is frequently reported in qualitative research and may be the gold standard. However, the use of saturation within methods has varied. Hence, the purpose of this column is to provide insight for the cardiovascular nurse regarding the use of saturation by reviewing the recommendations for which qualitative research methods it is appropriate to use and how to know when saturation is achieved. In understanding saturation, the cardiovascular nurse can be a better consumer of qualitative research.

  17. Recent advances in semiconductor optical amplifiers and their applications

    DEFF Research Database (Denmark)

    Stubkjær, Kristian; Mikkelsen, Benny; Djurhuus, Torsten

    1992-01-01

    The authors review recent advances in SOAs (semiconductor optical amplifiers) and some of their applications. SOAs are under rapid development to achieve polarization independent gain, low facet reflectivities, good coupling to optical fibers, and high saturation power. The package SOA can be made...... compact and possibly inexpensive, but its main advantage is the potential for optoelectronic integration. SOAs may be used as boosters and preamplifiers, but in the case of multichannel systems attention must be given to the inherent nonlinear behavior that is due to the short lifetime of the injected...

  18. Multi-spectral materials: hybridisation of optical plasmonic filters, a mid infrared metamaterial absorber and a terahertz metamaterial absorber.

    Science.gov (United States)

    Grant, James; McCrindle, Iain J H; Cumming, David R S

    2016-02-22

    Multi-spectral imaging systems typically require the cumbersome integration of disparate filtering materials and detectors in order to operate simultaneously in multiple spectral regions. Each distinct waveband must be detected at different spatial locations on a single chip or by separate chips optimised for each band. Here, we report on a single component that optically multiplexes visible, Mid Infrared (4.5 μm) and Terahertz (126 μm) radiation thereby maximising the spectral information density. We hybridise plasmonic and metamaterial structures to form a device capable of simultaneously filtering 15 visible wavelengths and absorbing Mid Infrared and Terahertz. Our synthetic multi-spectral component could be integrated with silicon complementary metal-oxide semiconductor technology where Si photodiodes are available to detect the visible radiation and micro-bolometers available to detect the Infrared/Terahertz and render an inexpensive, mass-producible camera capable of forming coaxial visible, Infrared and Terahertz images.

  19. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  20. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  1. Semiconductor radiation detectors. Device physics

    Energy Technology Data Exchange (ETDEWEB)

    Lutz, G. [Max-Planck-Institutes for Physics and Extraterrestrial Physics, Muenchen (Germany). Semiconductor Lab.

    2007-07-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  2. Physics of semiconductor laser devices

    Energy Technology Data Exchange (ETDEWEB)

    Thompson, G.H.B.

    1980-01-01

    Aspects of laser design and development are considered along with semiconductor materials for lasers, problems of device fabrication, crystal growth, the degradation of lasers, and the integration of semiconductor lasers with other optical components. A description is presented of light emission processes and laser action in semiconductors, taking into account electronic radiative transitions, the relation between emission and absorption processes, transition probabilities, the density of electron states in the highly doped semiconductor, carrier recombination and spontaneous emission, the gain/current relation, light-current characteristics, optical modes, and the evolution of mode spectrum and intensity with current. Attention is given to laser heterostructures and the properties of heterojunctions, optical waveguides, the performance of heterostructure lasers, stripe geometry lasers, and the dynamic response of lasers. Lasers with distributed feedback and Bragg reflectors are also discussed.

  3. Energy transfer with semiconductor nanocrystals

    NARCIS (Netherlands)

    Rogach, A.L.; Klar, T.A.; Lupton, J.M.; Meijerink, A.; Feldmann, J.

    2009-01-01

    Fo¨ rster (or fluorescence) resonant energy transfer (FRET) is a powerful spectroscopic technique to study interactions, conformational and distance changes, in hybrid nanosystems. Semiconductor nanocrystals, also known as colloidal quantum dots, are highly efficient fluorophores with a strong

  4. Ballistic superconductivity in semiconductor nanowires

    NARCIS (Netherlands)

    Zhang, H.; Gül, Ö.; Conesa-Boj, S.; Nowak, M.P.; Wimmer, M.; Zuo, K.; Mourik, V.; Vries, F.K. de; Veen, J. van; Moor, M.W.A. de; Bommer, J.D.S.; Woerkom, D.J. van; Car, D.; Plissard, S.R.; Bakkers, E.P.A.M.; Quintero Pérez, M.; Cassidy, M.C.; Koelling, S.; Goswami, S.; Watanabe, K.; Taniguchi, T.; Kouwenhoven, L.P.

    2017-01-01

    Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of

  5. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  6. Semiconductor nanocrystals or quantum dots

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 18; Issue 8. Various Quantum Mechanical Concepts for Confinements in Semiconductor Nanocrystals. Jayakrishna Khatei Karuna Kar Nanda. Classroom Volume 18 Issue 8 August 2013 pp 771-776 ...

  7. Design of metamaterial surfaces with broadband absorbance.

    Science.gov (United States)

    Wu, Chihhui; Shvets, Gennady

    2012-02-01

    A simple design paradigm for making broadband ultrathin plasmonic absorbers is introduced. The absorber's unit cell is composed of subunits of various sizes, resulting in nearly 100% absorbance at multiple adjacent frequencies and high absorbance over a broad frequency range. A simple theoretical model for designing broadband absorbers is presented. It uses a single-resonance model to describe the optical response of each subunit and employs the series circuit model to predict the overall response. Validity of the circuit model relies on short propagation lengths of the surface plasmons.

  8. Multi-channel coherent perfect absorbers

    KAUST Repository

    Bai, Ping

    2016-05-18

    The absorption efficiency of a coherent perfect absorber usually depends on the phase coherence of the incident waves on the surfaces. Here, we present a scheme to create a multi-channel coherent perfect absorber in which the constraint of phase coherence is loosened. The scheme has a multi-layer structure such that incident waves in different channels with different angular momenta can be simultaneously and perfectly absorbed. This absorber is robust in achieving high absorption efficiency even if the incident waves become "incoherent" and possess "random" wave fronts. Our work demonstrates a unique approach to designing highly efficient metamaterial absorbers. © CopyrightEPLA, 2016.

  9. Graphene based salisbury screen for terahertz absorber

    Science.gov (United States)

    Min Woo, Jeong; Kim, Min-Sik; Woong Kim, Hyun; Jang, Jae-Hyung

    2014-02-01

    A graphene-based, multiband absorber operating in terahertz (THz) frequency range was demonstrated. Graphene film was transferred onto the top of a flexible polymer substrate backed with a gold reflector. The graphene acts as a resistive film that partially attenuates and reflects THz waves. The destructive interference between THz waves reflected from graphene and backside reflector gives rise to perfect absorbance at multiple frequencies. To enhance the absorbance on/off ratio (AR), the conductivity of graphene was varied using a chemical doping method. The resulting p-doped, graphene-based THz absorber exhibited absorbance at maxima and AR higher than 0.95 and 25 dB, respectively.

  10. Toroidal-dipole induced plasmonic perfect absorber

    Science.gov (United States)

    Li, Jie; Wang, Ying-hua; Jin, Ren-chao; Li, Jia-qi; Dong, Zheng-gao

    2017-12-01

    We present a new kind of perfect absorber which roots in a toroidal dipole resonance. The toroidal metastructure consists of a metallic circular groove with a depth asymmetry, which couples to the toroidal dipole field in the near-infrared region and thus realizes nearly unit absorbance, acting as a perfect absorber. Moreover, this absorber owns a high sensitivity of 609.6 nm/RIU to the dielectric surroundings. Furthermore, by tuning the geometric parameters, both the toroidal dipole resonance and perfect absorbance characteristics are insensitive to the circular groove width, providing profound fabrication tolerance in future experiments.

  11. Mode-locking based on a zero-area pulse formation in a laser with a coherent absorber

    CERN Document Server

    Arkhipov, Mikhail V; Kalinichev, Alexey A; Babuskin, Ihar; Rosanov, Nikolai N; Arkhipov, Rostislav M

    2016-01-01

    We observe experimentally a mode-locking in a continuous narrow-band tunable dye laser with molecular iodine absorber cells, which transitions have large phase relaxation time T2. We show that the mode-locking arises due to coherent interaction of light with the absorbing medium leading to Rabi oscillations, so that zero-area (0{\\pi}-) pulses in the absorber are formed. Such mode-locking regime is different to most typical passive modelocking mechanisms where saturation plays the main role.

  12. Semiconductor packaging materials interaction and reliability

    CERN Document Server

    Chen, Andrea

    2012-01-01

    In semiconductor manufacturing, understanding how various materials behave and interact is critical to making a reliable and robust semiconductor package. Semiconductor Packaging: Materials Interaction and Reliability provides a fundamental understanding of the underlying physical properties of the materials used in a semiconductor package. The book focuses on an important step in semiconductor manufacturing--package assembly and testing. It covers the basics of material properties and explains how to determine which behaviors are important to package performance. The authors also discuss how

  13. Fractal properties of nanostructured semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhanabaev, Z.Zh. [Al-Farabi Khazakh National University, Tole bi Street, 96, Almaty 050012 (Kazakhstan); Grevtseva, T.Yu. [Al-Farabi Khazakh National University, Tole bi Street, 96, Almaty 050012 (Kazakhstan)]. E-mail: kenwp@mail.ru

    2007-03-15

    A theory for the temperature and time dependence of current carrier concentration in semiconductors with different non-equilibrium nanocluster structure has been developed. It was shown that the scale-invariant fractal self-similar and self-affine laws can exist near by the transition point to the equilibrium state. Results of the theory have been compared to the experimental data from electrical properties of semiconductor films with nanoclusters.

  14. Dissipative chaos in semiconductor superlattices

    Directory of Open Access Journals (Sweden)

    F. Moghadam

    2008-03-01

    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  15. Nonlinear Optical Interactions in Semiconductors.

    Science.gov (United States)

    1985-12-10

    Physique du Solide et Energie Solaire We had on-going interaction with Dr. Christian Verie on the growth of high quality narrow-gap semiconductor crystals...The band gap energy of the semiconductor decreases with increasing temperature. Consequently, the absorption of light in the energy region of the...gas and, more importantly, will modulate the electron energy at the difference frequency, wI - 02" Under ordinary circumstances such an energy (or

  16. Survey of cryogenic semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Talarico, L.J.; McKeever, J.W.

    1996-04-01

    Improved reliability and electronic performance can be achieved in a system operated at cryogenic temperatures because of the reduction in mechanical insult and in disruptive effects of thermal energy on electronic devices. Continuing discoveries of new superconductors with ever increasing values of T{sub c} above that of liquid nitrogen temperature (LNT) have provided incentive for developing semiconductor electronic systems that may also operate in the superconductor`s liquid nitrogen bath. Because of the interest in high-temperature superconductor (HTS) devices, liquid nitrogen is the cryogen of choice and LNT is the temperature on which this review is focused. The purpose of this survey is to locate and assemble published information comparing the room temperature (298 K), performance of commercially available conventional and hybrid semiconductor device with their performance at LNT (77K), to help establish their candidacy as cryogenic electronic devices specifically for use at LNT. The approach to gathering information for this survey included the following activities. Periodicals and proceedings were searched for information on the behavior of semiconductor devices at LNT. Telephone calls were made to representatives of semiconductor industries, to semiconductor subcontractors, to university faculty members prominent for their research in the area of cryogenic semiconductors, and to representatives of the National Aeronautics and Space Administration (NASA) and NASA subcontractors. The sources and contacts are listed with their responses in the introduction, and a list of references appears at the end of the survey.

  17. The ATLAS semiconductor tracker

    CERN Document Server

    Mikuz, Marko

    2003-01-01

    The ATLAS Semiconductor Tracker (SCT) is presented. About 16000 silicon micro-strip sensors with a total active surface of over 60 m **2 and with 6.3 million read-out channels are built into 4088 modules arranged into four barrel layers and nine disks covering each of the forward regions up to an eta of 2.5. Challenges are imposed by the hostile radiation environment with particle fluences up to 2 multiplied by 10**1**4 cm**-**2 1 MeV neutron NIEL equivalent and 100 kGy TID, the 25 ns LHC bunch crossing time and the need for a hermetic, lightweight tracker. The solution adopted is carefully designed strip detectors operated at -7 degree C, biased up to 500 V and read out by binary radhard fast BiCMOS electronics. A zero-CTE carbon fibre structure provides mechanical support. 30 kW of power are supplied on aluminiutn/Kapton tapes and cooled by C//3F//8 evaporative cooling. Data and commands are transferred by optical links. Prototypes of detector modules have been built, irradiated to the maximum expected flue...

  18. EDITORIAL: Oxide semiconductors

    Science.gov (United States)

    Kawasaki, M.; Makino, T.

    2005-04-01

    Blue or ultraviolet semiconducting light-emitting diodes have the potential to revolutionize illumination systems in the near-future. Such industrial need has propelled the investigation of several wide-gap semiconducting materials in recent years. Commercial applications include blue lasers for DVD memory and laser printers, while military applications are also expected. Most of the material development has so far been focused on GaN (band gap 3.5 eV at 2 K), and ZnSe (2.9 eV) because these two representative direct transition semiconductors are known to be bright emitting sources. GaN and GaN-based alloys are emerging as the winners in this field because ZnSe is subject to defect formation under high current drive. On the other hand, another II-VI compound, ZnO, has also excited substantial interest in the optoelectronics-oriented research communities because it is the brightest emitter of all, owing to the fact that its excitons have a 60 meV binding energy. This is compared with 26 meV for GaN and 20 meV for ZnSe. The stable excitons could lead to laser action based on their recombination even at temperatures well above room temperature. ZnO has additional major properties that are more advantageous than other wide-gap materials: availability of large area substrates, higher energy radiation stability, environmentally-friendly ingredients, and amenability to wet chemical etching. However, ZnO is not new to the semiconductor field as exemplified by several studies made during the 1960s on structural, vibrational, optical and electrical properties (Mollwo E 1982 Landolt-Boernstein New Series vol 17 (Berlin: Springer) p 35). In terms of devices, the luminescence from light-emitting diode structures was demonstrated in which Cu2O was used as the p-type material (Drapak I T 1968 Semiconductors 2 624). The main obstacle to the development of ZnO has been the lack of reproducible p-type ZnO. The possibility of achieving epitaxial p-type layers with the aid of thermal

  19. Power flow control using distributed saturable reactors

    Science.gov (United States)

    Dimitrovski, Aleksandar D.

    2016-02-13

    A magnetic amplifier includes a saturable core having a plurality of legs. Control windings wound around separate legs are spaced apart from each other and connected in series in an anti-symmetric relation. The control windings are configured in such a way that a biasing magnetic flux arising from a control current flowing through one of the plurality of control windings is substantially equal to the biasing magnetic flux flowing into a second of the plurality of control windings. The flow of the control current through each of the plurality of control windings changes the reactance of the saturable core reactor by driving those portions of the saturable core that convey the biasing magnetic flux in the saturable core into saturation. The phasing of the control winding limits a voltage induced in the plurality of control windings caused by a magnetic flux passing around a portion of the saturable core.

  20. Using X-ray computed tomography to evaluate the initial saturation resulting from different saturation procedures

    DEFF Research Database (Denmark)

    Christensen, Britt Stenhøj Baun; Wildenschild, D; Jensen, K.H.

    2006-01-01

    for saturation. Evaluation of the different enhanced saturation techniques was done with Xray computed tomography (CT) and gravimetrically. The use of CT scanning makes it possible to observe the spatial distribution of wetting and non-wetting phases in the porous medium in a non-destructive way. In this case...... with pressurized nitrogen between each saturation and allowed to saturate for the same length of time for all the different procedures. Both gravimetric measurements and CT attenuation levels showed that venting the sample with carbon dioxide prior to saturation clearly improved initial saturation whereas the use...

  1. Energy-Absorbing Beam Member

    Science.gov (United States)

    Littell, Justin D. (Inventor)

    2017-01-01

    An energy-absorbing (EA) beam member and having a cell core structure is positioned in an aircraft fuselage proximate to the floor of the aircraft. The cell core structure has a length oriented along a width of the fuselage, a width oriented along a length of the fuselage, and a depth extending away from the floor. The cell core structure also includes cell walls that collectively define a repeating conusoidal pattern of alternating respective larger and smaller first and second radii along the length of the cell core structure. The cell walls slope away from a direction of flight of the aircraft at a calibrated lean angle. An EA beam member may include the cell core structure and first and second plates along the length of the cell core structure on opposite edges of the cell material.

  2. Liquid crystal tunable metamaterial absorber.

    Science.gov (United States)

    Shrekenhamer, David; Chen, Wen-Chen; Padilla, Willie J

    2013-04-26

    We present an experimental demonstration of electronically tunable metamaterial absorbers in the terahertz regime. By incorporation of active liquid crystal into strategic locations within the metamaterial unit cell, we are able to modify the absorption by 30% at 2.62 THz, as well as tune the resonant absorption over 4% in bandwidth. Numerical full-wave simulations match well to experiments and clarify the underlying mechanism, i.e., a simultaneous tuning of both the electric and magnetic response that allows for the preservation of the resonant absorption. These results show that fundamental light interactions of surfaces can be dynamically controlled by all-electronic means and provide a path forward for realization of novel applications.

  3. Wide-Bandgap Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Chinthavali, M.S.

    2005-11-22

    With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters

  4. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  5. Continuous-wave Raman laser pumped within a semiconductor disk laser cavity.

    Science.gov (United States)

    Parrotta, Daniele C; Lubeigt, Walter; Kemp, Alan J; Burns, David; Dawson, Martin D; Hastie, Jennifer E

    2011-04-01

    A KGd(WO₄)₂ Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5.6 W of absorbed diode pump power, and output power up to 0.8 W at 1143 nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157 nm.

  6. Mode-locked semiconductor laser for long and absolute distance measurement based on laser pulse repetition frequency sweeping: a comparative study between three types of lasers

    Science.gov (United States)

    Castro Alves, D.; Abreu, Manuel; Cabral, Alexandre; Rebordão, J. M.

    2017-08-01

    In this work we present a study on three types of semiconductor mode-locked lasers as possible sources for a high precision absolute distance metrology measurement concept based on pulse repetition frequency (PRF) sweep. In this work, we evaluated one vertical emission laser and two transversal emission sources. The topology of the gain element is quantum-well, quantum-dot and quantum-dash, respectively. Only the vertical emission laser has optical pump, whilst the others operate with electric pumping. The quantum-dash laser does not have a saturable absorber in its configuration but relies on a dispersion compensating fiber for generating pulses. The bottleneck of vertical emission laser is his high power density pump (4.5W/165μm), increasing the vulnerability of damaging the gain element. The other lasers, i.e., the single (quantum-dash) and double section (quantum-dot) lasers present good results either in terms of applicability to the metrology system or in terms of robustness. Using RF injection on the gain element, both lasers show good PRF stabilization results (better than σy(10ms) = 10-9 ) which is a requirement for the mentioned metrology technique.

  7. Catalytic photooxidation of pentachlorophenol using semiconductor nanoclusters

    Energy Technology Data Exchange (ETDEWEB)

    WILCOXON,JESS P.

    2000-04-17

    Pentachlorophenol (PCP) is a toxic chlorinated aromatic molecule widely used as fungicide, a bactericide and a wood preservation, and thus ubiquitous in the environment. The authors report photo-oxidation of PCP using a variety of nanosize semiconductor metal oxides and sulfides in both aqueous and polar organic solvents and compare the photo-oxidation kinetics of these nanoclusters to widely studied bulk powders like Degussa P-25 TiO{sub 2} and CdS. They study both the light intensity dependence of PCP photooxidation for nanosize SnO{sub 2} and the size dependence of PCP photooxidation for both nanosize SnO{sub 2} and MoS{sub 2}. They find an extremely strong size dependence for the latter which they attribute to its size-dependent band gap and the associated change in redox potentials due to quantum confinement of the hole-electron pair. The authors show that nanosize MoS{sub 2} with a diameter of d=3.0 nm and an absorbance edge of {approximately}450 nm is a very effective photooxidation catalyst for complete PCP mineralization, even when using only visible light irradiation.

  8. Aluminium Nitrate As External Absorbent In The Microdetermination Of Carbon And Hydrogen In Organofluorine Compounds

    OpenAIRE

    Hassan, H. N. A. [حسن نجيب احمد حسن; Hassouna, Mohamed E. M.

    1994-01-01

    Silica gel loaded with saturated A1(NO3)3- 10. H2O solution proved to be an efficient absorbent for the elimination of the interference of fluorine in the microdetermination of carbon and hydrogen in organofluorine compounds. The reagent is cheap, readily available and easily prepared. Three grams are sufficient for 25 determinations. Samples are burnt in a flow of oxygen using the rapid straight empty tube method. The combustion products are passed through anhydrone, silica gel-aluminium nit...

  9. Nonlinear polarization rotation in semiconductor optical amplifiers: Theory and application to all-optical flip-flop memories

    NARCIS (Netherlands)

    Dorren, H.J.S.; Lenstra, D.; Liu, Y.S.; Hill, M. T.; Khoe, G.D.

    2003-01-01

    We present a model for polarization-dependent gain saturation in strained bulk semiconductor optical amplifiers. We assume that the polarized optical field can be decomposed into transverse electric and transverse magnetic components that have indirect interaction with each other via the gain

  10. A Six-Fold Symmetric Metamaterial Absorber

    OpenAIRE

    Álvarez, Humberto Fernández; Gómez, María de Cos; Las-Heras, Fernando

    2015-01-01

    A novel microwave metamaterial absorber design is introduced along with its manufacturing and characterization. Significant results considering both bandwidth and angular stability are achieved. Parametric analysis and simplified equivalent circuit are provided to give an insight on the key elements influencing the absorber performance. In addition, the constitutive parameters of the effective medium model are obtained and related to the absorber resonant behavior. Moreover, a new thinner an...

  11. Multiband Negative Permittivity Metamaterials and Absorbers

    Directory of Open Access Journals (Sweden)

    Yiran Tian

    2013-01-01

    Full Text Available Design and characteristics of multiband negative permittivity metamaterial and its absorber configuration are presented in this paper. The proposed multiband metamaterial is composed of a novel multibranch resonator which can possess four electric resonance frequencies. It is shown that, by controlling the length of the main branches of such resonator, the resonant frequencies and corresponding absorbing bands of metamaterial absorber can be shifted in a large frequency band.

  12. A Multilayer Rubber Board Radar Absorbing Material

    OpenAIRE

    He, Shan; LI Yehua; Zhou, Chun

    2016-01-01

    Based on the theory of impedance matching, a multilayer absorbing material with the "pitfall" structure was designed. The multilayer absorbing material with 5 layers was obtained by optimization of the schemes, and the material shows 2 absorbing peaks in the broadband of 2~18 GHz frequencies. The peak in high frequencies can be adjusted with no effect on the peak in low frequencies through changing the thickness of the fifth layer. The changes of input impedances were displayed by analyzing t...

  13. Optical-Fiber-Based, Time-Resolved Photoluminescence Spectrometer for Thin-Film Absorber Characterization and Analysis of TRPL Data for CdS/CdTe Interface: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Kuciauskas, D.; Duenow, J. N.; Kanevce, A.; Li, J. V.; Young, M. R.; Dippo, P.; Levi, D. H.

    2012-06-01

    We describe the design of a time resolved photoluminescence (TRPL) spectrometer for rapid semiconductor absorber characterization. Simplicity and flexibility is achieved by using single optical fiber to deliver laser pulses and to collect photoluminescence. We apply TRPL for characterization of CdS/CdTe absorbers after deposition, CdCl2 treatment, Cu doping, and back contact formation. Data suggest this method could be applied in various stages of PV device processing. Finally, we show how to analyze TRPL data for CdS/CdTe absorbers by considering laser light absorption depth and intermixing at CdS/CdTe interface.

  14. Synthesis and characterization of saturated polyester and ...

    Indian Academy of Sciences (India)

    and nanocomposites derived from glycolyzed PET waste with varied compositions. SUNAIN KATOCH. ∗ ... Water vapour transmission (WVT) was determined for saturated polyester nanocomposite sheets according to ... ing the synthesis of saturated polyester (from GPET waste). This has been done for the estimation of the ...

  15. Fault tolerant control of systems with saturations

    DEFF Research Database (Denmark)

    Niemann, Hans Henrik

    2013-01-01

    This paper presents framework for fault tolerant controllers (FTC) that includes input saturation. The controller architecture known from FTC is based on the Youla-Jabr-Bongiorno-Kucera (YJBK) parameterization is extended to handle input saturation. Applying this controller architecture in connec...

  16. A Six-Fold Symmetric Metamaterial Absorber.

    Science.gov (United States)

    Fernández Álvarez, Humberto; de Cos Gómez, María Elena; Las-Heras, Fernando

    2015-04-03

    A novel microwave metamaterial absorber design is introduced along with its manufacturing and characterization. Significant results considering both bandwidth and angular stability are achieved. Parametric analysis and simplified equivalent circuit are provided to give an insight on the key elements influencing the absorber performance. In addition, the constitutive parameters of the effective medium model are obtained and related to the absorber resonant behavior. Moreover, a new thinner and more flexible absorber version, preserving broad bandwidth and angular insensitive performance, is simulated, and an 8 × 8 unit-cells prototype is manufactured and measured for a limited angular margin in an anechoic chamber.

  17. A Six-Fold Symmetric Metamaterial Absorber

    Directory of Open Access Journals (Sweden)

    Humberto Fernández Álvarez

    2015-04-01

    Full Text Available A novel microwave metamaterial absorber design is introduced along with its manufacturing and characterization. Significant results considering both bandwidth and angular stability are achieved. Parametric analysis and simplified equivalent circuit are provided to give an insight on the key elements influencing the absorber performance. In addition, the constitutive parameters of the effective medium model are obtained and related to the absorber resonant behavior. Moreover, a new thinner and more flexible absorber version, preserving broad bandwidth and angular insensitive performance, is simulated, and an 8 × 8 unit-cells prototype is manufactured and measured for a limited angular margin in an anechoic chamber.

  18. Determination of saturation functions and wettability for chalk based on measured fluid saturations

    Energy Technology Data Exchange (ETDEWEB)

    Olsen, D.; Bech, N.; Moeller Nielsen, C.

    1998-08-01

    The end effect of displacement experiments on low permeable porous media is used for determination of relative permeability functions and capillary pressure functions. Saturation functions for a drainage process are determined from a primary drainage experiment. A reversal of the flooding direction creates an intrinsic imbibition process in the sample, which enables determination if imbibition saturation functions. The saturation functions are determined by a parameter estimation technique. Scanning effects are modelled by the method of Killough. Saturation profiles are determined by NMR. (au)

  19. Photoreflectance Characterization of Semiconductors

    Science.gov (United States)

    Bhimnathwala, Hemant Ghanshyamdas

    Photoreflectance technique has been used as a non-destructive probe of surface photo-voltage in doped and semi-insulating semiconductors. A system used to measure the photoreflectance spectra near the fundamental gap of GaAs and InP has been described. Measurements as a function of pump intensity on n and p type GaAs were used to infer the carrier dynamics leading to change in the surface electric field. Measurements indicate that the surface of GaAs consists of hole traps at the surface in addition to recombination states. This is confirmed by spectroscopic studies carried out by varying the pump modulation frequency at fixed temperatures and the measurements show that the hole trap has an activation energy of 0.29 eV and has an emission time of 0.175 +/- 0.002 msec. at room temperature. In semi-insulating GaAs, it is expected that there is no surface electric field at equilibrium due to pinning at the surface and large concentration of deep defect EL2. Electromodulation, in this case proceeds via preferential trapping of holes at the surface. This is supported by measurements carried out as a function of pump intensity and on wafers having different carbon concentrations. Analysis of carrier dynamics in semi-insulating GaAs is much simplified by use of Nd:YAG laser (instead of a HeNe laser) as a source of pump beam. A sub-band -gap excitation generates mainly excess electrons and the Poisson's equation can be integrated once to find the surface electric field. Numerical integration yields the surface photovoltage. It is shown that this technique is sensitive to the the surface state density and relatively insensitive to bulk properties. It has been applied to study the effect of various chemical reactants on the surface state density. In many PR spectra, features at energies less than the gap energy are observed. These are ascribed to shallow acceptors unrelated to carbon, which was the dominant acceptor in these materials. It is proposed that the electric field

  20. Application of semiconductor and upconversion nanomaterials in cosmetics, coatings, and phantoms

    Science.gov (United States)

    Popov, Alexey; Bykov, Alexander; Khaydukov, Eugeny; Semchishen, Vladimir; Kordas, Krisztian; Tuchin, Valery

    2014-10-01

    In this paper, an overview of selected applications of semiconductor (TiO2 and ZnO) and upconversion nanoparticles is presented. Depending on the size, the former are used as scattering and absorbing compounds in sunscreens and tissuemimicking phantoms; and in combination with gypsum - also as an antibacterial coating for indoor premises, while the latter, especially in combination with optical clearing - as a promising component for deep-biotissue imaging both in vitro and in vivo.

  1. Physics of semiconductor laser devices

    Energy Technology Data Exchange (ETDEWEB)

    Thompson, G.H.B.

    1980-01-01

    The physics of the semiconductor laser is studied. The basic phenomena that control the operation of the device are analyzed and described in considerable detail. The treatment has been keyed particularly to fundamental concepts and kept general in order to avoid being overtaken by events. The range of phenomena in a semiconductor laser involves a number of scientific disciplines. To cater for the reader who is not already a specialist in all of these the author has endeavoured, in the chapters on fundamental behaviour, to provide in a readable form the minimum background that is needed to understand the more specialist part of the text. As an introduction a general review is given of the whole range of semiconductor laser devices that now exist, the technology involved in their fabrication, the factors that determine their reliability, and their possible role in integrated systems.

  2. Thiophene-Based Organic Semiconductors.

    Science.gov (United States)

    Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

    2017-10-24

    Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

  3. High pressure semiconductor physics I

    CERN Document Server

    Willardson, R K; Paul, William; Suski, Tadeusz

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tra...

  4. Absorption and refractive index dynamics in waveguide semiconductor electroabsorbers

    DEFF Research Database (Denmark)

    Romstad, Francis Pascal

    2002-01-01

    with 9.6 dB of extinction ratio can be realized. Teh sign of the refractive index change, induced by optical generation of carriers in the active region, is seen to depend both on the optical power and on the reverse bias applied to the saturable absorber. The trends of the observed refractive index...... with 10 shallow quantum wells and a component with 5 deep quantum wells shows that the shallow 10 quantum wells component is preferable with respect to chirp, extinction ratio and potentially also the insertion loss. Calculations of the refractive indes change confirms the measurements and show...

  5. Semiconductor device physics and simulation

    CERN Document Server

    Yuan, J S

    1998-01-01

    This volume provides thorough coverage of modern semiconductor devices -including hetero- and homo-junction devices-using a two-dimensional simulator (MEDICI) to perform the analysis and generate simulation results Each device is examined in terms of dc, ac, and transient simulator results; relevant device physics; and implications for design and analysis Two hundred forty-four useful figures illustrate the physical mechanisms and characteristics of the devices simulated Comprehensive and carefully organized, Semiconductor Device Physics and Simulation is the ideal bridge from device physics to practical device design

  6. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    The developments with coherent control (CC) techniques in optical spectroscopy have recently demonstrated population control and coherence manipulations when the induced optical phase is explored with phase-locked laser pulses. These and other developments have been guiding the new research field...... of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase-locked...

  7. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  8. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  9. Introduction to semiconductor manufacturing technology

    CERN Document Server

    2012-01-01

    IC chip manufacturing processes, such as photolithography, etch, CVD, PVD, CMP, ion implantation, RTP, inspection, and metrology, are complex methods that draw upon many disciplines. [i]Introduction to Semiconductor Manufacturing Technologies, Second Edition[/i] thoroughly describes the complicated processes with minimal mathematics, chemistry, and physics; it covers advanced concepts while keeping the contents accessible to readers without advanced degrees. Designed as a textbook for college students, this book provides a realistic picture of the semiconductor industry and an in-depth discuss

  10. Wide band gap semiconductor templates

    Energy Technology Data Exchange (ETDEWEB)

    Arendt, Paul N. (Los Alamos, NM); Stan, Liliana (Los Alamos, NM); Jia, Quanxi (Los Alamos, NM); DePaula, Raymond F. (Santa Fe, NM); Usov, Igor O. (Los Alamos, NM)

    2010-12-14

    The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

  11. Modeling of semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  12. Organic semiconductors in sensor applications

    CERN Document Server

    Malliaras, George; Owens, Róisín

    2008-01-01

    Organic semiconductors offer unique characteristics such as tunability of electronic properties via chemical synthesis, compatibility with mechanically flexible substrates, low-cost manufacturing, and facile integration with chemical and biological functionalities. These characteristics have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this rapidly emerging field by discussing both optical and electrical sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques to enhance specificity are outlined, and models for the sensor response are described.

  13. Device for absorbing mechanical shock

    Science.gov (United States)

    Newlon, C.E.

    1979-08-29

    This invention is a comparatively inexpensive but efficient shock-absorbing device having special application to the protection of shipping and storage cylinders. In a typical application, two of the devices are strapped to a cylinder to serve as saddle-type supports for the cylinder during storage and to protect the cylinder in the event it is dropped during lifting or lowering operations. In its preferred form, the invention includes a hardwood plank whose grain runs in the longitudinal direction. The basal portion of the plank is of solid cross-section, whereas the upper face of the plank is cut away to form a concave surface fittable against the sidewall of a storage cylinder. The concave surface is divided into a series of segments by transversely extending, throughgoing relief slots. A layer of elastomeric material is positioned on the concave face, the elastomer being extrudable into slots when pressed against the segments by a preselected pressure characteristic of a high-energy impact. The compressive, tensile, and shear properties of the hardwood and the elastomer are utilized in combination to provide a surprisingly high energy-absorption capability.

  14. Influence of phonons on semiconductor quantum emission

    Energy Technology Data Exchange (ETDEWEB)

    Feldtmann, Thomas

    2009-07-06

    A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semiconductor systems is presented. The theory is applied to study quantum dots and phonon-assisted luminescence in bulk semiconductors and heterostructures. (orig.)

  15. Fundamentals of semiconductors physics and materials properties

    CERN Document Server

    Yu, Peter Y

    2005-01-01

    Provides detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. This textbook emphasizes understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors and features an extensive collection of tables of material parameters, figures, and problems.

  16. Applications of semiconductor detectors to nuclear medicine

    CERN Document Server

    Bradford-Barber, H

    1999-01-01

    Progress in the development of semiconductor detectors is being applied to improving the resolution and imaging performance of nuclear medicine cameras. Nuclear medicine is briefly described. Efforts to develop semiconductor cameras for both planar and tomographic imaging are reviewed.

  17. Equivalent circuits for calculating the radio-engineering parameters of a grid of absorbing filaments in a dielectric layer

    Science.gov (United States)

    Kaplun, V. A.; Kulish, V. G.

    1985-05-01

    An equivalent circuit is proposed for calculating the characteristics of a dielectric layer with a grid of absorbing semiconductor filaments (used in radar and microwave-antenna technology) in the case of electromagnetic-wave incidence. Mathematical relationships are obtained for circuit parameters for thin and relatively 'thick' filaments with and without allowance for the effect of the air-dielectric interface. Calculation results are compared with experimental data.

  18. Novel multi-chromophor light absorber concepts for DSSCs for efficient electron injection

    Energy Technology Data Exchange (ETDEWEB)

    Schuetz, Robert; Strothkaemper, Christian; Bartelt, Andreas; Hannappel, Thomas; Eichberger, Rainer [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Fasting, Carlo [Institut fuer Organische Chemie, Freie Universitaet Berlin, Takustrasse 3, 14195 Berlin (Germany); Thomas, Inara [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Institut fuer Organische Chemie, Freie Universitaet Berlin, Takustrasse 3, 14195 Berlin (Germany)

    2011-07-01

    Dye sensitized solar cells (DSSCs) operate by injecting electrons from the excited state of a light-harvesting dye into the continuum of conduction band states of a wide bandgap semiconductor. The light harvesting efficiency of pure organic dyes is limited by a narrow spectral electronic transition. A beneficial broad ground state absorption in the VIS region can be achieved by applying a single molecular dye system with multiple chromophors involving a Foerster resonance energy transfer (FRET) mechanism for an efficient electron injection. A model donor acceptor dye system capable for FRET chemically linked to colloidal TiO{sub 2} and ZnO nanorod surfaces was investigated in UHV environment. We used VIS/NIR femtosecond transient absorption spectroscopy and optical pump terahertz probe spectroscopy to study the charge injection dynamics of the antenna system. Different chromophors attached to a novel scaffold/anchor system connecting the organic absorber unit to the metal oxide semiconductor were probed.

  19. Effects of gain medium parameters on the sensitivity of semiconductor ring laser gyroscope

    Science.gov (United States)

    Khandelwal, Arpit; Hossein, Y. S.; Syed, Azeemuddin; Sayeh, M. R.; Nayak, Jagannath

    2017-09-01

    The semiconductor gain medium has rich non-linear dynamics and several internal parameters influence the generation and propagation of light through it. With the gain medium being an integral part of semiconductor ring laser gyroscope (SRLG) cavity, its parameters affect the overall performance of the gyro. The effect is further elevated in integrated SRLG due to stronger confinement of charge carriers and photons leading to a more intense interaction between them. In this paper, we evaluate the influence of semiconductor gain medium parameters such as gain saturation coefficient, linewidth, internal quantum efficiency etc. on the sensitivity of bulk fiber-optic SRLG. Ways of controlling these parameters and optimizing their values to enhance the performance of SRLG are also discussed.

  20. Absorbing Property of Multi-layered Short Carbon Fiber Absorbing Coating

    OpenAIRE

    Liu, Zhaohui; Tao, Rui; Ban, Guodong; Luo, Ping

    2017-01-01

    The radar absorbing coating was prepared with short carbon fiber asabsorbent and waterborne polyurethane (WPU) as matrix resin. The coating’s absorbing property was tested with vectornetwork analyzer, using aramid honeycomb as air layer which was matched withcarbon fiber coating. The results demonstrate that the single-layered carbonfiber absorbing coating presented relatively poor absorbing property when thelayer was thin, and the performance was slightly improved after the matched airlayer ...

  1. High-speed pulse train amplification in semiconductor optical amplifiers with optimized bias current

    OpenAIRE

    Xia, Mingjun; H. Ghafouri-Shiraz; Hou, Lianping; Kelly, Anthony E.

    2017-01-01

    In this paper, we have experimentally investigated the optimized bias current of semiconductor optical amplifiers (SOAs) to achieve high-speed input pulse train amplification with high gain and low distortion. Variations of the amplified output pulse duration with the amplifier bias currents have been analyzed and, compared to the input pulse duration, the amplified output pulse duration is broadened. As the SOA bias current decreases from the high level (larger than the saturated bias curren...

  2. Absorbed radiation dose on LHC interconnects

    CERN Document Server

    Versaci, R; Vlachoudis, V; CERN. Geneva. ATS Department

    2011-01-01

    Here we present the results of our FLUKA simulations devoted to the evaluation of the peak dose absorbed by the busbar insulator in the LHC Interaction Region 7 interconnects. The peak dose absorbed by the cold magnet coils are also presented.

  3. A Flexible Metamaterial Terahertz Perfect Absorber

    Science.gov (United States)

    Chen, X. R.; Zheng, Y. W.; Qin, L. M.; Wei, G. C.; Qin, Z. P.; Zhang, N. G.; Liu, K.; Li, S. Z.; Wang, S. X.

    2017-12-01

    We designed a THz matematerial absorber using metallic wires (MWs) and split resonant rings (SRRs). This matematerial absorber exhibits perfect absorption which up to 96% at 4.03 THz and is capable of wrapped around objects because of flexible polyimide dielectric substrate.

  4. Tuned mass absorber on a flexible structure

    DEFF Research Database (Denmark)

    Krenk, Steen; Høgsberg, Jan Becker

    2014-01-01

    The classic design of a tuned mass absorber is based on a simple two-mass analogy in which the tuned mass is connected to the structural mass with a spring and a viscous damper. In a flexible multi-degree-of-freedom structure the tuned mass absorber is typically introduced to provide damping of a...

  5. An ultrathin dual-band metamaterial absorber

    Science.gov (United States)

    Zhang, Yong; Duan, Junping; Zhang, Wendong; Wang, Wanjun; Zhang, Binzhen

    2016-10-01

    The design and preparation of an ultrathin dual-band metamaterial absorber whose resonant frequency located at radar wave (20 GHz-60 GHz) is presented in this paper. The absorber is composed of a 2-D periodic sandwich featured with two concentric annuluses. The influence on the absorber's performance produced by resonant cell's structure size and material parameters was numerically simulated and analyzed based on the standard full wave finite integration technology in CST. Laser ablation process was adopted to prepare the designed absorber on epoxy resin board coated with on double plane of copper with a thickness that is 1/30 and 1/50 of the resonant wavelength at a resonant frequency of 30.51 GHz and 48.15 GHz. The full width at half maximum (FWHM) reached 2.2 GHz and 2.35 GHz and the peak of the absorptance reached 99.977%. The ultrathin absorber is nearly omnidirectional for all polarizations. The test results of prepared sample testify the designed absorber's excellent absorbing performance forcefully. The absorber expands inspirations of radar stealth in military domain due to its flexible design, cost-effective and other outstanding properties.

  6. 21 CFR 872.6050 - Saliva absorber.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Saliva absorber. 872.6050 Section 872.6050 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES DENTAL DEVICES Miscellaneous Devices § 872.6050 Saliva absorber. (a) Identification. A saliva...

  7. Distortion of pulse height spectra due to absorbers in the measurement of low-energy beta-rays with a silicon detector

    CERN Document Server

    Yamamoto, H; Norimura, T; Katase, A

    2002-01-01

    In measurement of beta-rays from sup 1 sup 4 C with a silicon semiconductor detector, pulse height spectra are observed to change by insertion of absorbers between the source and the detector. An obvious broad peak appears in the spectra by the insertion. An increase in the absorber thickness reduces the peak height, and shifts the peak position to the higher energy side in the spectra. On the other hand, the increase in the distance between the source and the absorber also reduces the peak height, but does not move the position of the peak. The absorption curve derived from these results shows its particular shape corresponding to the respective position of the absorber. Therefore, the distortion of the pulse height spectrum for low-energy beta-rays depends not only on the thickness of the absorber but also on its position between the source and the detector. (author)

  8. Absorbable Meshes in Inguinal Hernia Surgery

    DEFF Research Database (Denmark)

    Öberg, Stina; Andresen, Kristoffer; Rosenberg, Jacob

    2017-01-01

    PURPOSE: Absorbable meshes used in inguinal hernia repair are believed to result in less chronic pain than permanent meshes, but concerns remain whether absorbable meshes result in an increased risk of recurrence. The aim of this study was to present an overview of the advantages and limitations...... of fully absorbable meshes for the repair of inguinal hernias, focusing mainly on postoperative pain and recurrence. METHODS: This systematic review with meta-analyses is based on searches in PubMed, Embase, Cochrane, and Psychinfo. Included study designs were case series, cohort studies, randomized...... controlled trials (RCTs), and non-RCTs. Studies had to include adult patients undergoing an inguinal hernia repair with a fully absorbable mesh. RESULTS: The meta-analyses showed no difference in recurrence rates (median 18 months follow-up) and chronic pain rates (1 year follow-up) between absorbable...

  9. A Multilayer Rubber Board Radar Absorbing Material

    Directory of Open Access Journals (Sweden)

    HE Shan

    2016-08-01

    Full Text Available Based on the theory of impedance matching, a multilayer absorbing material with the "pitfall" structure was designed. The multilayer absorbing material with 5 layers was obtained by optimization of the schemes, and the material shows 2 absorbing peaks in the broadband of 2~18 GHz frequencies. The peak in high frequencies can be adjusted with no effect on the peak in low frequencies through changing the thickness of the fifth layer. The changes of input impedances were displayed by analyzing the impedance chart. The prepared multilayer absorbing material was named JB-5, which processes the reflectivity no more than -12 dB in 6~17 GHz with the thickness no more than 5 mm and a good performance of standing the environment. The absorbing material can be produced in laboratory and pasted on surfaces of target with special adhesive by trimmed into required shapes so as to reduce the reflection of electromagnetic waves effectively.

  10. [Absorbed doses in dental radiology].

    Science.gov (United States)

    Bianchi, S D; Roccuzzo, M; Albrito, F; Ragona, R; Anglesio, S

    1996-01-01

    The growing use of dento-maxillo-facial radiographic examinations has been accompanied by the publication of a large number of studies on dosimetry. A thorough review of the literature is presented in this article. Most studies were carried out on tissue equivalent skull phantoms, while only a few were in vivo. The aim of the present study was to evaluate in vivo absorbed doses during Orthopantomography (OPT). Full Mouth Periapical Examination (FMPE) and Intraoral Tube Panoramic Radiography (ITPR). Measurements were made on 30 patients, reproducing clinical conditions, in 46 anatomical sites, with 24 intra- and 22 extra-oral thermoluminiscent dosimeters (TLDS). The highest doses were measured, in orthopantomography, at the right mandibular angle (1899 mu Gy) in FMPE on the right naso-labial fold (5640 mu Gy and in ITPR on the palatal surface of the left second upper molar (1936 mu Gy). Intraoral doses ranged from 21 mu Gy, in orthopantomography, to 4494 mu Gy in FMPE. Standard errors ranged from 142% in ITPR to 5% in orthopantomography. The highest rate of standard errors was found in FMPE and ITPR. The data collected in this trial are in agreement with others in major literature reports. Disagreements are probably due to different exam acquisition and data collections. Such differences, presented comparison in several sites, justify lower doses in FMPE and ITPR. Advantages and disadvantages of in vivo dosimetry of the maxillary region are discussed, the former being a close resemblance to clinical conditions of examination and the latter the impossibility of collecting values in depth of tissues. Finally, both ITPR and FMPE required lower doses than expected, and can be therefore reconsidered relative to their radiation risk.

  11. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

    2000-01-01

    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

  12. Semiconductors for plasmonics and metamaterials

    DEFF Research Database (Denmark)

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct...

  13. 2010 Defects in Semiconductors GRC

    Energy Technology Data Exchange (ETDEWEB)

    Shengbai Zhang

    2011-01-06

    Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, as well as an emphasis on the development of novel defect detection methods and first-principles defect theories. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference will deal with point and extended defects in a broad range of electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, oxides, sp{sup 2} carbon based-materials, and photovoltaic/solar cell materials, and in understanding important defect phenomena such as doping bottleneck in nanostructures and the diffusion of defects and impurities. The program consists of about twenty invited talks and a number of contributed poster sessions. The emphasis should be on work which has yet to be published. The large amount of discussion time provides an ideal forum for dealing with topics that are new and/or controversial.

  14. Atomistic Models of Amorphous Semiconductors

    NARCIS (Netherlands)

    Jarolimek, K.

    2011-01-01

    Crystalline silicon is probably the best studied material, widely used by the semiconductor industry. The subject of this thesis is an intriguing form of this element namely amorphous silicon. It can contain a varying amount of hydrogen and is denoted as a-Si:H. It completely lacks the neat long

  15. Basic semiconductor physics. 2. ed.

    Energy Technology Data Exchange (ETDEWEB)

    Hamaguchi, Chihiro [Osaka Univ., Suita (Japan). Dept. Electronic Engineering

    2010-07-01

    This book presents a detailed description of the basic semiconductor physics. The reader is assumed to have a basic command of mathematics and some elementary knowledge of solid state physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. The reader can understand three different methods of energy band calculations, empirical pseudo-potential, k.p perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for full band Monte Carlo simulation are discussed. Experiments and theoretical analysis of cyclotron resonance are discussed in detail because the results are essential to the understanding of semiconductor physics. Optical and transport properties, magneto-transport, two dimensional electron gas transport (HEMT and MOSFET), and quantum transport are reviewed, explaining optical transition, electron phonon interactions, electron mobility. Recent progress in quantum structures such as two-dimensional electron gas, superlattices, quantum Hall effect, electron confinement and the Landauer formula are included. The Quantum Hall effect is presented with different models. In the second edition, the addition energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. Also the physics of semiconductor Lasers is described in detail including Einstein coefficients, stimulated emission, spontaneous emission, laser gain, double heterostructures, blue Lasers, optical confinement, laser modes, strained quantum wells lasers which will give insight into the physics of various kinds of semiconductor lasers, in addition to the various processes of luminescence. (orig.)

  16. Design of a nonlinear torsional vibration absorber

    Science.gov (United States)

    Tahir, Ammaar Bin

    Tuned mass dampers (TMD) utilizing linear spring mechanisms to mitigate destructive vibrations are commonly used in practice. A TMD is usually tuned for a specific resonant frequency or an operating frequency of a system. Recently, nonlinear vibration absorbers attracted attention of researchers due to some potential advantages they possess over the TMDs. The nonlinear vibration absorber, or the nonlinear energy sink (NES), has an advantage of being effective over a broad range of excitation frequencies, which makes it more suitable for systems with several resonant frequencies, or for a system with varying excitation frequency. Vibration dissipation mechanism in an NES is passive and ensures that there is no energy backflow to the primary system. In this study, an experimental setup of a rotational system has been designed for validation of the concept of nonlinear torsional vibration absorber with geometrically induced cubic stiffness nonlinearity. Dimensions of the primary system have been optimized so as to get the first natural frequency of the system to be fairly low. This was done in order to excite the dynamic system for torsional vibration response by the available motor. Experiments have been performed to obtain the modal parameters of the system. Based on the obtained modal parameters, the design optimization of the nonlinear torsional vibration absorber was carried out using an equivalent 2-DOF modal model. The optimality criterion was chosen to be maximization of energy dissipation in the nonlinear absorber attached to the equivalent 2-DOF system. The optimized design parameters of the nonlinear absorber were tested on the original 5-DOF system numerically. A comparison was made between the performance of linear and nonlinear absorbers using the numerical models. The comparison showed the superiority of the nonlinear absorber over its linear counterpart for the given set of primary system parameters as the vibration energy dissipation in the former is

  17. Combinatorics of saturated secondary structures of RNA.

    Science.gov (United States)

    Clote, P

    2006-11-01

    Following Zuker (1986), a saturated secondary structure for a given RNA sequence is a secondary structure such that no base pair can be added without violating the definition of secondary structure, e.g., without introducing a pseudoknot. In the Nussinov-Jacobson energy model (Nussinov and Jacobson, 1980), where the energy of a secondary structure is -1 times the number of base pairs, saturated secondary structures are local minima in the energy landscape, hence form kinetic traps during the folding process. Here we present recurrence relations and closed form asymptotic limits for combinatorial problems related to the number of saturated secondary structures. In addition, Python source code to compute the number of saturated secondary structures having k base pairs can be found at the web servers link of bioinformatics.bc.edu/clotelab/.

  18. Saturated fat, carbohydrate, and cardiovascular disease

    National Research Council Canada - National Science Library

    Siri-Tarino, Patty W; Sun, Qi; Hu, Frank B; Krauss, Ronald M

    2010-01-01

    A focus of dietary recommendations for cardiovascular disease (CVD) prevention and treatment has been a reduction in saturated fat intake, primarily as a means of lowering LDL-cholesterol concentrations...

  19. Saturated thickness, High Plains aquifer, 2009

    Data.gov (United States)

    U.S. Geological Survey, Department of the Interior — This raster data set represents the saturated thickness of the High Plains aquifer of the United States, 2009, in feet. The High Plains aquifer underlies...

  20. Charge Transfer Studies of Semiconductor Interfaces

    Science.gov (United States)

    Kumar, Amit

    1992-10-01

    For all semiconductors (n-Si, p-Si, n-GaAs, n -InP, a-Si:H), the spectral response of liquids junctions, in the short wavelength region (200-600 nm), showed higher quantum yields than metal junctions. This general trend was independent of redox species, solvent, supporting electrolyte, and metal overlayer. This technique was also used to distinguish between Schottky behavior from electrocatalytic behavior of metal overlayers. Studies of n-Si photoelectrodes in aqueous and non-aqueous electrolytes have been conducted. For all n-Si/CH_3OH-dimethylferrocene ^{+/0}(Me_2Fc ^{+/0}) cells, the forward bias dark currents, the open circuit voltage (V _{rm oc}), and temperature dependence of V_{rm oc} were independent redox species concentrations. All n-Si photoanodes (naked and coated with discontinuous metal overlayers) were found to be unstable in aqueous electrolytes. Novel metal/insulator/semiconductor devices have been fabricated through the anodic growth of the insulator layer in a methanol based electrolyte. These devices do not suffer from Fermi level pining restrictions, and some exhibit electronic properties limited by minority carrier transport. A theoretical framework has been formulated to describe the behavior of photoelectrolysis cells, and experiments at n-SrTiO3/5.0 M KOH(aq)/Pt junctions have been conducted. The data exhibits a photocurrent threshold in the short circuit electrolysis current at 0.02-0.03 mW/cm^2 of 325 nm illumination, which is consistent with the theoretical framework. The behavior of Si/CH_3OH -Me_2Fc^{+/0 } junctions has been investigated under high injection conditions. With a structure having n+ diffused back contacts, V_{rm oc} s of 626 + 5 mV were obtained at short circuit photocurrent densities of 20 mA/cm^2. The diode quality factor and reverse saturation current were 1.8 + 0.1 and (2.6 + 1.5) times 10 ^{-8} A/cm^2, respectively. These data are consistent with recombination dominated by the base and back contact regions, and not

  1. Vibration analysis on compact car shock absorber

    Science.gov (United States)

    Tan, W. H.; Cheah, J. X.; Lam, C. K.; Lim, E. A.; Chuah, H. G.; Khor, C. Y.

    2017-10-01

    Shock absorber is a part of the suspension system which provides comfort experience while driving. Resonance, a phenomenon where forced frequency is coinciding with the natural frequency has significant effect on the shock absorber itself. Thus, in this study, natural frequencies of the shock absorber in a 2 degree-of-freedom system were investigated using Wolfram Mathematica 11, CATIA, and ANSYS. Both theoretical and simulation study how will the resonance affect the car shock absorber. The parametric study on the performance of shock absorber also had been conducted. It is found that the failure tends to occur on coil sprung of the shock absorber before the body of the shock absorber is fail. From mathematical modelling, it can also be seen that higher vibration level occurred on un-sprung mass compare to spring mass. This is due to the weight of sprung mass which could stabilize as compared with the weight of un-sprung mass. Besides that, two natural frequencies had been obtained which are 1.0 Hz and 9.1 Hz for sprung mass and un-sprung mass respectively where the acceleration is recorded as maximum. In conclusion, ANSYS can be used to validate with theoretical results with complete model in order to match with mathematical modelling.

  2. Thin film absorber for a solar collector

    Science.gov (United States)

    Wilhelm, William G.

    1985-01-01

    This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  3. Porphyrin Based Near Infrared-Absorbing Materials for Organic Photovoltaics

    Science.gov (United States)

    Zhong, Qiwen

    The conservation and transformation of energy is essential to the survival of mankind, and thus concerns every modern society. Solar energy, as an everlasting source of energy, holds one of the key solutions to some of the most urgent problems the world now faces, such as global warming and the oil crisis. Advances in technologies utilizing clean, abundant solar energy, could be the steering wheel of our societies. Solar cells, one of the major advances in converting solar energy into electricity, are now capturing people's interest all over the globe. While solar cells have been commercially available for many years, the manufacturing of solar cells is quite expensive, limiting their broad based implementation. The cost of solar cell based electricity is 15-50 cents per kilowatt hour (¢/kwh), depending on the type of solar cell, compared to 0.7 ¢/kwh for fossil fuel based electricity. Clearly, decreasing the cost of electricity from solar cells is critical for their wide spread deployment. This will require a decrease in the cost of light absorbing materials and material processing used in fabricating the cells. Organic photovoltaics (OPVs) utilize organic materials such as polymers and small molecules. These devices have the advantage of being flexible and lower cost than conventional solar cells built from inorganic semiconductors (e.g. silicon). The low cost of OPVs is tied to lower materials and fabrication costs of organic cells. However, the current power conversion efficiencies of OPVs are still below 15%, while convention crystalline Si cells have efficiencies of 20-25%. A key limitation in OPVs today is their inability to utilize the near infrared (NIR) portion of the solar spectrum. This part of the spectrum comprises nearly half of the energy in sunlight that could be used to make electricity. The first and foremost step in conversion solar energy conversion is the absorption of light, which nature has provided us optimal model of, which is

  4. Semiconductor detectors in nuclear and particle physics

    Energy Technology Data Exchange (ETDEWEB)

    Rehak, P. [Brookhaven National Lab., Upton, NY (United States); Gatti, E. [Piazza Leonardo da Vinci 32, Milano (Italy)

    1992-12-31

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups: Classical semiconductor diode detectors and semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported.

  5. Semiconductor detectors in nuclear and particle physics

    Energy Technology Data Exchange (ETDEWEB)

    Rehak, P. [Brookhaven National Laboratory, Upton, New York 11973 (United States); Gatti, E. [Politecnico di Milano, Dipartimento di Elletronica e Informazione, Piazza Leondardo da Vinci 32, 20133 Milano (Italy)

    1995-07-10

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups; (i) classical semiconductor diode detectors and (ii) semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  6. Extent and structure of intervening absorbers from absorption lines redshifted on quasar emission lines

    Science.gov (United States)

    Bergeron, J.; Boissé, P.

    2017-07-01

    not our primary goal, we also checked when possible that singly-ionised absorbers are uniform at the parsec scale, in agreement with previous studies. In Tol 0453-423, we have discovered a very unusual case with a small but clearly significant residual flux for a saturated Fe IIλ2600 line at zabs = 0.72604 seen on Lyα emission, thus with an absorber size comparable to or larger than that of the ELR. Based on observations with VLT-UVES and Keck-HIRES.

  7. Microwave diode switchable metamaterial reflector/absorber

    Science.gov (United States)

    Xu, Wangren; Sonkusale, Sameer

    2013-07-01

    We embed diodes as active circuit elements within a metamaterial to implement a switchable metamaterial reflector/absorber at microwave frequencies. Diodes are placed in series with the unit cells of the metamaterial array. This results in just a pair of control lines to actively tune all the diodes in a metamaterial. Diodes can be tuned on and off to switch the function of the metamaterial between a perfect absorber and a reflector. The design, simulation, and experimental results of a switchable reflector/absorber in 2-6 GHz range are presented.

  8. Conformal metamaterial absorber for curved surface.

    Science.gov (United States)

    Jang, Youngsoo; Yoo, Minyeong; Lim, Sungjoon

    2013-10-07

    In this paper, three different unit cells are designed on the basis split-ring-cross resonators, and each unit cell has an absorption rate greater than 90% at incident angles of 0°, 30°, and 45°, respectively. They are non-periodically placed in three different zones on the curved surface. Therefore, the proposed conformal metamaterial absorber can achieve a high absorption rate. The performance of the proposed absorber is compared with that of a metallic curved surface and a conformal metamaterial absorber with the same unit cells.

  9. Graphene and Graphene Metamaterials for Terahertz Absorbers

    DEFF Research Database (Denmark)

    Andryieuski, Andrei; Pizzocchero, Filippo; Booth, Tim

    2013-01-01

    Graphene, due to the possibility to tune its conductivity, is the promising material for a range of the terahertz (THz) applications, such as tunable reflectors, absorbers, modulators, filters and polarization converters. Subwavelength structuring of graphene in order to form metamaterials allows...... for even more control over the THz waves. In this poster presentation I will show an elegant way to describe the graphene metamaterials and the design of graphene based absorbers. I will also present our recent experimental results on the graphene absorbers characterization....

  10. The Effect of the Electron Tunneling on the Photoelectric Hot Electrons Generation in Metallic-Semiconductor Nanostructures

    Science.gov (United States)

    Elsharif, Asma M.

    2018-01-01

    Semiconductor photonic crystals (MSPhC) were used to convert solar energy into hot electrons. An experimental model was designed by using metallic semiconductor photonic crystals (MSPhC). The designed MSPhC is based on TiO2/Au schottky contact. The model has similar nanocavity structure for broad gold absorption, but the materials on top of the cavity were changed to a metal and a semiconductor in order to collect the hot electrons. Detailed design steps and characterization have shown a broadband sub-bandgap photoresponse at a wavelength of 590 nm. This is due to the surface plasmon absorption by the wafer-scale Au/TiO2 metallic-semiconductor photonic crystal. Analytical calculation of the hot electron transport from the Au thin layer to the TiO2 conduction band is discussed. This theoretical study is based on the quantum tunneling effect. The photo generation of the hot electrons was undertaken at different wavelengths in Au absorber followed by tunneling through a schottky barrier into a TiO2 collector. The presence of a tunnel current from the absorber to the collector under illumination, offers a method to extract carriers from a hot-electron distribution at few bias voltages is presented in this study. The effects of doping different concentrations of the semiconductor on the evolution of the current characteristics were also investigated and discussed. The electrical characteristics were found to be sensitive to any change in the thickness of the barrier.

  11. SATURATED ZONE IN-SITU TESTING

    Energy Technology Data Exchange (ETDEWEB)

    P.W. REIMUS

    2004-11-08

    The purpose of this scientific analysis is to document the results and interpretations of field experiments that test and validate conceptual flow and radionuclide transport models in the saturated zone (SZ) near Yucca Mountain, Nevada. The test interpretations provide estimates of flow and transport parameters used in the development of parameter distributions for total system performance assessment (TSPA) calculations. These parameter distributions are documented in ''Site-Scale Saturated Zone Flow Model (BSC 2004 [DIRS 170037]), Site-Scale Saturated Zone Transport'' (BSC 2004 [DIRS 170036]), Saturated Zone Colloid Transport (BSC 2004 [DIRS 170006]), and ''Saturated Zone Flow and Transport Model Abstraction'' (BSC 2004 [DIRS 170042]). Specifically, this scientific analysis contributes the following to the assessment of the capability of the SZ to serve as part of a natural barrier for waste isolation for the Yucca Mountain repository system: (1) The bases for selection of conceptual flow and transport models in the saturated volcanics and the saturated alluvium located near Yucca Mountain. (2) Results and interpretations of hydraulic and tracer tests conducted in saturated fractured volcanics at the C-wells complex near Yucca Mountain. The test interpretations include estimates of hydraulic conductivities, anisotropy in hydraulic conductivity, storativities, total porosities, effective porosities, longitudinal dispersivities, matrix diffusion mass transfer coefficients, matrix diffusion coefficients, fracture apertures, and colloid transport parameters. (3) Results and interpretations of hydraulic and tracer tests conducted in saturated alluvium at the Alluvial Testing Complex (ATC) located at the southwestern corner of the Nevada Test Site (NTS). The test interpretations include estimates of hydraulic conductivities, storativities, total porosities, effective porosities, longitudinal dispersivities, matrix diffusion mass

  12. Thermal Evaluation of Storage Rack with an Advanced Neutron Absorber during Normal Operation

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hee-Jae; Kim, Mi-Jin; Sohn, Dong-Seong [UNIST, Ulsan (Korea, Republic of)

    2016-10-15

    The storage capacity of the domestic wet storage site is expected to reach saturation from Hanbit in 2024 to Sin-wolseong in 2038 and accordingly management alternatives are urgently taken. Since installation of the dense rack is considered in the short term, it is necessary to urgently develop an advanced neutron absorber which can be applied to a spent nuclear fuel storage facility. Neutron absorber is the material for controlling the reactivity. A material which has excellent thermal neutron absorption ability, high strength and corrosion resistance must be selected as the neutron absorber. Existing neutron absorbers are made of boron which has a good thermal absorption ability such as BORAL and METAMIC. However, possible problems have been reported in using the boron-based neutron absorber for wet storage facility. Gadolinium is known to have higher neutron absorption cross-section than that of boron. And the strength of duplex stainless steel is about 1.5 times higher than stainless steel 304 which has been frequently used as a structural material. Therefore, duplex stainless steel which contains gadolinium is in consideration as an advanced neutron absorber. Temperature distribution is shown in figure 4. In pool bottom region near the inlet shows a relatively low tendency and heat generated from the fuel assemblies is transmitted to the pool upper region by the vertical flow. Also, temperature gradient appear in rack structures for the axial direction and temperature is uniformly distributed in the pool upper region. Table 1 presents the calculated results. The maximum temperature is 306.63K and does not exceed the 333.15K (60℃). The maximum temperature of the neutron absorber is 306.48K.

  13. An ultra-broadband multilayered graphene absorber

    KAUST Repository

    Amin, Muhammad

    2013-01-01

    An ultra-broadband multilayered graphene absorber operating at terahertz (THz) frequencies is proposed. The absorber design makes use of three mechanisms: (i) The graphene layers are asymmetrically patterned to support higher order surface plasmon modes that destructively interfere with the dipolar mode and generate electromagnetically induced absorption. (ii) The patterned graphene layers biased at different gate voltages backedup with dielectric substrates are stacked on top of each other. The resulting absorber is polarization dependent but has an ultra-broadband of operation. (iii) Graphene\\'s damping factor is increased by lowering its electron mobility to 1000cm 2=Vs. Indeed, numerical experiments demonstrate that with only three layers, bandwidth of 90% absorption can be extended upto 7THz, which is drastically larger than only few THz of bandwidth that can be achieved with existing metallic/graphene absorbers. © 2013 Optical Society of America.

  14. Research on a multiband metamaterial absorber

    Science.gov (United States)

    Yu, Xiebin; Song, Yaoliang; Fan, Shicheng

    2017-10-01

    This paper describes the design of a multiband metamaterial absorber based on double-gap sheet metal and takes it into simulation by CST microwave studio. The results of simulation show that the metamaterial absorber achieves absorption rate up to 99.6%, 99.8%, 99.9% and 93.5% at 4.64 GHz, 8.67 GHz, 13.93 GHz and 18.53 GHz respectively. The thickness of the metamaterial absorber is just 3.3%, 6.3%, 10.0% and 13.3% of its working wavelength respectively. Finally, the absorption mechanism is analyzed by using the surface current,surface charge and the impedance matching theory. This metamaterial absorber has potential application in multifrequency radar, electromagnetic compatibility of complex electronic platform and so on.

  15. Space Compatible Radar Absorbing Materials Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR Phase 1 project shall investigate novel radar absorbing materials (RAM) for use in space or simulated space environments. These materials are lightweight...

  16. Optically Modulated Multiband Terahertz Perfect Absorber

    DEFF Research Database (Denmark)

    Seren, Huseyin R.; Keiser, George R.; Cao, Lingyue

    2014-01-01

    response of resonant metamaterials continues to be a challengingendeavor. Resonant perfect absorbers have flourished as one of the mostpromising metamaterial devices with applications ranging from power har-vesting to terahertz imaging. Here, an optically modulated resonant perfectabsorber is presented...

  17. Spectroscopic analysis of optoelectronic semiconductors

    CERN Document Server

    Jimenez, Juan

    2016-01-01

    This book deals with standard spectroscopic techniques which can be used to analyze semiconductor samples or devices, in both, bulk, micrometer and submicrometer scale. The book aims helping experimental physicists and engineers to choose the right analytical spectroscopic technique in order to get specific information about their specific demands. For this purpose, the techniques including technical details such as apparatus and probed sample region are described. More important, also the expected outcome from experiments is provided. This involves also the link to theory, that is not subject of this book, and the link to current experimental results in the literature which are presented in a review-like style. Many special spectroscopic techniques are introduced and their relationship to the standard techniques is revealed. Thus the book works also as a type of guide or reference book for people researching in optical spectroscopy of semiconductors.

  18. Catalysts, Protection Layers, and Semiconductors

    DEFF Research Database (Denmark)

    Chorkendorff, Ib

    2015-01-01

    acid or alkaline conditions. Since most relevant semiconductors are very prone to corrosion the advantage of using buried junctions and using protection layers offering shall be discussed [2-4]. Next we shall discuss the availability of various catalysts for being coupled to these protections layers...... and how their stability may be evaluated [5, 6]. Examples of half-cell reaction using protection layers for both cathode and anode will be discussed though some of recent examples under both alkaline and acidic conditions. Si is a very good low band gap semiconductor and by using TiO2 as a protection...... layer we can stabilize it for both H2 and O2 evolution [7, 8, 9, 10]. Notably NiOx promoted by iron is a material that is transparent, providing protection, and is a good catalyst for O2 evolution. We have also recently started searching for large band gap semicondutors like III-V based or pervoskite...

  19. Transversal light forces in semiconductors

    CERN Document Server

    Lindberg, M

    2003-01-01

    The transversal light force is a well established effect in atomic and molecular systems that are exposed to spatially inhomogeneous light fields. In this paper it is shown theoretically that in an excited semiconductor, containing an electron-hole plasma or excitons, a similar light force exists, if the semiconductor is exposed to an ultrashort spatially inhomogeneous light field. The analysis is based on the equations of motion for the Wigner distribution functions of charge carrier populations and interband polarizations. The results show that, while the light force on the electron-hole plasma or the excitons does exist, its effects on the kinetic behaviour of the electron-hole plasma or the excitons are different compared to the situation in an atomic or molecular system. A detailed analysis presented here traces this difference back to the principal differences between atoms and molecules on the one hand and electron-hole plasmas or excitons on the other hand.

  20. Semiconductor electrolyte photovoltaic energy converter

    Science.gov (United States)

    Anderson, W. W.; Anderson, L. B.

    1975-01-01

    Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.