The cascaded amplifier and saturable absorber (CASA) all-optical switch

DEFF Research Database (Denmark)

Hilliger, E.; Berger, J.; Weber, H. G.

2001-01-01

The cascaded amplifier and saturable absorber is presented as a new all-optical switching scheme for optical signal processing applications. First demultiplexing experiments demonstrate the principle of operation of this scheme....

UV saturable absorber for short-pulse KrF laser systems

Energy Technology Data Exchange (ETDEWEB)

Nishioka, H.; Kuranishi, H.; Ueda, K.; Takuma, H.

1989-07-01

A derivative of the linear tricyclic compound, acridine, is shown to beuseful as a saturable absorber for short-pulse KrF lasers. The saturationcharacteristics and absorption recovery of a methanol solution of acridine for a20-psec KrF laser pulse are reported. We obtain a saturation fluence of 1.2mJ/cm/sup 2/ and a ratio of the primary to the excited absorption cross sectionof 6.25:1.

Gain dynamics and saturation in semiconductor quantum dot amplifiers

DEFF Research Database (Denmark)

Berg, Tommy Winther; Mørk, Jesper; Hvam, Jørn Märcher

2004-01-01

Quantum dot (QD)-based semiconductor optical amplifiers offer unique properties compared with conventional devices based on bulk or quantum well material. Due to the bandfilling properties of QDs and the existence of a nearby reservoir of carriers in the form of a wetting layer, QD semiconductor...... optical amplifiers may be operated in regimes of high linearity, i.e. with a high saturation power, but can also show strong and fast nonlinearities by breaking the equilibrium between discrete dot states and the continuum of wetting layer states. In this paper, we analyse the interplay of these two...

CsPbBr{sub 3} nanocrystal saturable absorber for mode-locking ytterbium fiber laser

Energy Technology Data Exchange (ETDEWEB)

Zhou, Yan; Li, Yue; Xu, Jianqiu; Tang, Yulong, E-mail: yulong@sjtu.edu.cn [Key Laboratory for Laser Plasmas (MOE), Department of Physics and Astronomy, Collaborative Innovation Center of IFSA, Shanghai Jiao Tong University, Shanghai 200240 (China); Hu, Zhiping; Tang, Xiaosheng [Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044 (China)

2016-06-27

Cesium lead halide perovskite nanocrystals (CsPbX{sub 3}, X = Cl, Br, I) have been reported as efficient light-harvesting and light-emitting semiconductor materials, but their nonlinear optical properties have been seldom touched upon. In this paper, we prepare layered CsPbBr{sub 3} nanocrystal films and characterize their physical properties. Broadband linear absorption from ∼0.8 to over 2.2 μm and nonlinear optical absorption at the 1-μm wavelength region are measured. The CsPbBr{sub 3} saturable absorber (SA), manufactured by drop-casting of colloidal CsPbBr{sub 3} liquid solution on a gold mirror, shows modulation depth and saturation intensity of 13.1% and 10.7 MW/cm{sup 2}, respectively. With this SA, mode-locking operation of a polarization-maintained ytterbium fiber laser produces single pulses with duration of ∼216 ps, maximum average output power of 10.5 mW, and the laser spectrum is centered at ∼1076 nm. This work shows that CsPbBr{sub 3} films can be efficient SA candidates for fiber lasers and also have great potential to become broadband linear and nonlinear optical materials for photonics and optoelectronics.

Short pulse absorption dynamics in a p-i-n InGaAsP MQW waveguide saturable absorber

DEFF Research Database (Denmark)

Romstad, Francis Pascal; Öhman, Filip; Mørk, Jesper

2002-01-01

The saturation properties and absorption dynamics of an InGaAsP MQW waveguide saturable absorber is measured using short 200-fs and 1-ps pulses. The dependence on the pulse energy and reverse bias is characterized.......The saturation properties and absorption dynamics of an InGaAsP MQW waveguide saturable absorber is measured using short 200-fs and 1-ps pulses. The dependence on the pulse energy and reverse bias is characterized....

Dynamical study of a laser with a saturable absorber

Energy Technology Data Exchange (ETDEWEB)

Dignowity, D; RamIrez, R [Centro de Investigaciones en Optica, Loma del Bosque 115, Col. Lomas del Campestre, 37150, Leon, Guanajuato (Mexico)

2005-01-01

The study of a laser including a saturable absorber is presented. The non-linear system describing the complex dynamics of the laser is presented. The laser is shown to operate in several regimes depending on the parameters used. It is also shown how the control of the laser is possible depending on the operating regime parameters.

Q-Switched Operation with Carbon-Based Saturable Absorbers in a Nd:YLF Laser

Directory of Open Access Journals (Sweden)

Rosa Weigand

2015-09-01

Full Text Available We have numerically studied the influence of the absorption modulation depth of carbon-based saturable absorbers (graphene and carbon nanotubes (CNTs on the Q-switched regime of a diode-pumped Nd:YLF laser. A short-length cavity was used with an end mirror on which CNTs or mono- or bi-layer graphene were deposited, forming a saturable absorber mirror (SAM. Using a standard model, the generated energy per pulse was calculated, as well as the pulse duration and repetition rate. The results show that absorbers with higher modulation depths, i.e., graphene, deliver higher energy pulses at lower repetition rates. However, the pulse duration did not have a monotonic behavior and reaches a minimum for a given low value of the modulation depth typical of CNTs.

Transition-metal dichalcogenides heterostructure saturable absorbers for ultrafast photonics.

Science.gov (United States)

Chen, Hao; Yin, Jinde; Yang, Jingwei; Zhang, Xuejun; Liu, Mengli; Jiang, Zike; Wang, Jinzhang; Sun, Zhipei; Guo, Tuan; Liu, Wenjun; Yan, Peiguang

2017-11-01

In this Letter, high-quality WS 2 film and MoS 2 film were vertically stacked on the tip of a single-mode fiber in turns to form heterostructure (WS 2 -MoS 2 -WS 2 )-based saturable absorbers with all-fiber integrated features. Their nonlinear saturable absorption properties were remarkable, such as a large modulation depth (∼16.99%) and a small saturable intensity (6.23  MW·cm -2 ). Stable pulses at 1.55 μm with duration as short as 296 fs and average power as high as 25 mW were obtained in an erbium-doped fiber laser system. The results demonstrate that the proposed heterostructures own remarkable nonlinear optical properties and offer a platform for adjusting nonlinear optical properties by stacking different transition-metal dichalcogenides or modifying the thickness of each layer, paving the way for engineering functional ultrafast photonics devices with desirable properties.

Low-loss saturable absorbers based on tapered fibers embedded in carbon nanotube/polymer composites

Science.gov (United States)

Martinez, Amos; Al Araimi, Mohammed; Dmitriev, Artemiy; Lutsyk, Petro; Li, Shen; Mou, Chengbo; Rozhin, Alexey; Sumetsky, Misha; Turitsyn, Sergei

2017-12-01

The emergence of low-dimensional materials has opened new opportunities in the fabrication of compact nonlinear photonic devices. Single-walled carbon nanotubes were among the first of those materials to attract the attention of the photonics community owing to their high third order susceptibility, broadband operation, and ultrafast response. Saturable absorption, in particular, has become a widespread application for nanotubes in the mode-locking of a fiber laser where they are used as nonlinear passive amplitude modulators to initiate pulsed operation. Numerous approaches have been proposed for the integration of nanotubes in fiber systems; these can be divided into those that rely on direct interaction (where the nanotubes are sandwiched between fiber connectors) and those that rely on lateral interaction with the evanescence field of the propagating wave. Tapered fibers, in particular, offer excellent flexibility to adjust the nonlinearity of nanotube-based devices but suffer from high losses (typically exceeding 50%) and poor saturable to non-saturable absorption ratios (typically above 1:5). In this paper, we propose a method to fabricate carbon nanotube saturable absorbers with controllable saturation power, low-losses (as low as 15%), and large saturable to non-saturable loss ratios approaching 1:1. This is achieved by optimizing the procedure of embedding tapered fibers in low-refractive index polymers. In addition, this study sheds light in the operation of these devices, highlighting a trade-off between losses and saturation power and providing guidelines for the design of saturable absorbers according to their application.

Charge Saturation and Intrinsic Doping in Electrolyte-Gated Organic Semiconductors.

Science.gov (United States)

Atallah, Timothy L; Gustafsson, Martin V; Schmidt, Elliot; Frisbie, C Daniel; Zhu, X-Y

2015-12-03

Electrolyte gating enables low voltage operation of organic thin film transistors, but little is known about the nature of the electrolyte/organic interface. Here we apply charge-modulation Fourier transform infrared spectroscopy, in conjunction with electrical measurements, on a model electrolyte gated organic semiconductor interface: single crystal rubrene/ion-gel. We provide spectroscopic signature for free-hole like carriers in the organic semiconductor and unambiguously show the presence of a high density of intrinsic doping of the free holes upon formation of the rubrene/ion-gel interface, without gate bias (Vg = 0 V). We explain this intrinsic doping as resulting from a thermodynamic driving force for the stabilization of free holes in the organic semiconductor by anions in the ion-gel. Spectroscopy also reveals the saturation of free-hole like carrier density at the rubrene/ion-gel interface at Vg < -0.5 V, which is commensurate with the negative transconductance seen in transistor measurements.

A Q-Switched Erbium-Doped Fiber Laser with a Carbon Nanotube Based Saturable Absorber

International Nuclear Information System (INIS)

Harun, S. W.; Ismail, M. A.; Ahmad, F.; Ismail, M. F.; Nor, R. M.; Zulkepely, N. R.; Ahmad, H.

2012-01-01

We demonstrate a simple, compact and low cost Q-switched erbium-doped fiber laser (EDFL) using single-wall carbon nanotubes (CNTs) as a saturable absorber for possible applications in metrology, sensing, and medical diagnostics. The EDFL operates at around 1560 nm with repetition rates of 16.1 kHz and 6.4 kHz with saturable absorbers SA1 and SA2 at a pump power of 120 mW. The absorbers are constructed by optically driven deposition and normal deposition techniques. It is observed that the optical deposition method produces a Q-switched EDFL with a lower threshold of 70 mW and better Q-switching performance compared to that of the normal deposition method. The EDFL also has pulse energy of 90.3 nJ and pulse width of 11.6 μs at 120 mW pump power

Ultrahigh precision nonlinear reflectivity measurement system for saturable absorber mirrors with self-referenced fluence characterization.

Science.gov (United States)

Orsila, Lasse; Härkönen, Antti; Hyyti, Janne; Guina, Mircea; Steinmeyer, Günter

2014-08-01

Measurement of nonlinear optical reflectivity of saturable absorber devices is discussed. A setup is described that enables absolute accuracy of reflectivity measurements better than 0.3%. A repeatability within 0.02% is shown for saturable absorbers with few-percent modulation depth. The setup incorporates an in situ knife-edge characterization of beam diameters, making absolute reflectivity estimations and determination of saturation fluences significantly more reliable. Additionally, several measures are discussed to substantially improve the reliability of the reflectivity measurements. At its core, the scheme exploits the limits of state-of-the-art digital lock-in technology but also greatly benefits from a fiber-based master-oscillator power-amplifier source, the use of an integrating sphere, and simultaneous comparison with a linear reflectivity standard.

Graphene-gold supercapacitor as a voltage controlled saturable absorber for femtosecond pulse generation.

Science.gov (United States)

Baylam, Isinsu; Balci, Osman; Kakenov, Nurbek; Kocabas, Coskun; Sennaroglu, Alphan

2016-03-01

We report, for the first time to the best of our knowledge, use of a graphene-gold supercapacitor as a voltage controlled fast saturable absorber for femtosecond pulse generation. The unique design involving only one graphene electrode lowers the insertion loss of the device, in comparison with capacitor designs with two graphene electrodes. Furthermore, use of the high-dielectric electrolyte allows reversible, adjustable control of the absorption level up to the visible region with low bias voltages of only a few volts (0-2 V). The fast saturable absorber action of the graphene-gold supercapacitor was demonstrated inside a multipass-cavity Cr:forsterite laser to generate nearly transform-limited, sub-100 fs pulses at a pulse repetition rate of 4.51 MHz at 1.24 μm.

Low-loss saturable absorbers based on tapered fibers embedded in carbon nanotube/polymer composites

Directory of Open Access Journals (Sweden)

Amos Martinez

2017-12-01

Full Text Available The emergence of low-dimensional materials has opened new opportunities in the fabrication of compact nonlinear photonic devices. Single-walled carbon nanotubes were among the first of those materials to attract the attention of the photonics community owing to their high third order susceptibility, broadband operation, and ultrafast response. Saturable absorption, in particular, has become a widespread application for nanotubes in the mode-locking of a fiber laser where they are used as nonlinear passive amplitude modulators to initiate pulsed operation. Numerous approaches have been proposed for the integration of nanotubes in fiber systems; these can be divided into those that rely on direct interaction (where the nanotubes are sandwiched between fiber connectors and those that rely on lateral interaction with the evanescence field of the propagating wave. Tapered fibers, in particular, offer excellent flexibility to adjust the nonlinearity of nanotube-based devices but suffer from high losses (typically exceeding 50% and poor saturable to non-saturable absorption ratios (typically above 1:5. In this paper, we propose a method to fabricate carbon nanotube saturable absorbers with controllable saturation power, low-losses (as low as 15%, and large saturable to non-saturable loss ratios approaching 1:1. This is achieved by optimizing the procedure of embedding tapered fibers in low-refractive index polymers. In addition, this study sheds light in the operation of these devices, highlighting a trade-off between losses and saturation power and providing guidelines for the design of saturable absorbers according to their application.

Spectrally selective solar absorber with sharp and temperature dependent cut-off based on semiconductor nanowire arrays

Science.gov (United States)

Wang, Yang; Zhou, Lin; Zheng, Qinghui; Lu, Hong; Gan, Qiaoqiang; Yu, Zongfu; Zhu, Jia

2017-05-01

Spectrally selective absorbers (SSA) with high selectivity of absorption and sharp cut-off between high absorptivity and low emissivity are critical for efficient solar energy conversion. Here, we report the semiconductor nanowire enabled SSA with not only high absorption selectivity but also temperature dependent sharp absorption cut-off. By taking advantage of the temperature dependent bandgap of semiconductors, we systematically demonstrate that the absorption cut-off profile of the semiconductor-nanowire-based SSA can be flexibly tuned, which is quite different from most of the other SSA reported so far. As an example, silicon nanowire based selective absorbers are fabricated, with the measured absorption efficiency above (below) bandgap ˜97% (15%) combined with an extremely sharp absorption cut-off (transition region ˜200 nm), the sharpest SSA demonstrated so far. The demonstrated semiconductor-nanowire-based SSA can enable a high solar thermal efficiency of ≳86% under a wide range of operating conditions, which would be competitive candidates for the concentrated solar energy utilizations.

Fabrication of PDMS/SWCNT thin films as saturable absorbers

International Nuclear Information System (INIS)

Hernandez-Romano, I; Sanchez-Mondragon, J J; Davila-Rodriguez, J; Delfyett, P J; May-Arrioja, D A

2011-01-01

We present a novel technique to fabricate a saturable absorber thin film based on Polydimethylsiloxane doped with Single Wall Carbon Nanotubes. Using this film a passive mode-locked fiber laser in a standard ring cavity configuration was built by inserting the film between two angled connectors. Self-starting passively mode-locked laser operation was easily observed. The generated pulses have a width of 1.26 ps at a repetition rate of 22.7 MHz with an average power of 4.89 mW.

Black phosphorus saturable absorber for a diode-pumped passively Q-switched Er:CaF2 mid-infrared laser

Science.gov (United States)

Li, Chun; Liu, Jie; Guo, Zhinan; Zhang, Han; Ma, Weiwei; Wang, Jingya; Xu, Xiaodong; Su, Liangbi

2018-01-01

A multilayer black phosphorus, as a novel two dimensional saturable absorber, has superb saturable absorption properties for a Er:CaF2 solid-state pulse laser. The pulse laser is realized at mid-infrared region with the passively Q-switched technology by a diode-pumping. The high-quality black phosphorus saturable absorber is fabricated by liquid phase exfoliation method. The pulse laser generates the pulses operation with the pulse duration of 954.8 ns, the repetition rate of 41.93 kHz, the pulse energy of 4.25 μJ and the peak power of 4.45 W. Our work demonstrates that black phosphorus could be used as a kind of efficient mid-infrared region optical absorber for ultrafast photonics.

Temporal shaping of nanosecond CO2 laser pulses in multiphoton saturable absorbers

International Nuclear Information System (INIS)

Haglund, R.F. Jr.

1981-01-01

It was shown that substantial temporal distortion of nanosecond 10.6 μm laser pulses occurs in traversing multiphoton saturable absorbers. The risetime and pulse delay effects appear to depend both on fluence and wavelength, and to be qualitatively consistent with predictions of a simple two-level absorption model

FY1995 research on nonlinear optical devices using super-lattice semiconductors; 1995 nendo chokoshi active hisenkei soshi wo mochiita chokosoku hikari seigyo gijutsu no kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-03-01

The purpose is to develop technologies on efficient generation and control of femtosecond optical pulses using a novel semiconductor optical devices. We studied a modelocked Cr:forsterite laser pumped by a diode pumped Nd:YVO4 laser. Both Kerr lens mode locking and semi-conductor saturable absorber initiated mode locking have been achieved. The minimum pulse width for pure Kerr lens mode locking is 26.4 fs, while for the semiconductor saturable absorber initiated mode locking, the pulse width is 36 fs. The latter is very resistant to the environment perturbations. We also present the measured dispersion data for the forsterite crystal and the SESAM, and discuss the dispersion compensation technique. (NEDO)

Fiber-integrated tungsten disulfide saturable absorber (mirror) for pulsed fiber lasers

Science.gov (United States)

Chen, Hao; Li, Irene Ling; Ruan, Shuangchen; Guo, Tuan; Yan, Peiguang

2016-08-01

We propose two schemes for achieving tungsten disulfide (WS2)-based saturable absorber (SA) and saturable absorber mirror (SAM). By utilizing the pulsed laser deposition method, we grow the WS2 film on microfiber to form an evanescent field interaction SA device. Incorporating this SA device into a common ring-cavity erbium-doped fiber (EDF) laser, stably passive mode-locking can be achieved with pulse duration of 395 fs and signal-to-noise ratio of 64 dB. We also produce a fiber tip integrated WS2-SAM by utilizing the magnetron sputtering technique (MST). This new type of SAM combines the WS2 layer as SA and gold mirror as high reflective mirror. By employing the WS2-SAM, we construct the linear-cavity EDF lasers, and achieve passive mode-locking operation with pulse duration of ˜1 ns and SNR of ˜61 dB. We further achieve stably passive Q-switching operation with pulse duration of ˜160 ns and pulse energy of 54.4 nJ. These fiber-integrated SAs and SAMs have merits of compactness and reliability, paving the way for the development of new photonic devices such as SAs for pulsed laser technology.

Phosphorene quantum dot saturable absorbers for ultrafast fiber lasers

Science.gov (United States)

Du, J.; Zhang, M.; Guo, Z.; Chen, J.; Zhu, X.; Hu, G.; Peng, P.; Zheng, Z.; Zhang, H.

2017-01-01

We fabricate ultrasmall phosphorene quantum dots (PQDs) with an average size of 2.6 ± 0.9 nm using a liquid exfoliation method involving ultrasound probe sonication followed by bath sonication. By coupling the as-prepared PQDs with microfiber evanescent light field, the PQD-based saturable absorber (SA) device exhibits ultrafast nonlinear saturable absorption property, with an optical modulation depth of 8.1% at the telecommunication band. With the integration of the all-fiber PQD-based SA, a continuous-wave passively mode-locked erbium-doped (Er-doped) laser cavity delivers stable, self-starting pulses with a pulse duration of 0.88 ps and at the cavity repetition rate of 5.47 MHz. Our results contribute to the growing body of work studying the nonlinear optical properties of ultrasmall PQDs that present new opportunities of this two-dimensional (2D) nanomaterial for future ultrafast photonic technologies. PMID:28211471

Fabrication of a saturable absorber WS2 and its mode locking in solid-state laser

Science.gov (United States)

Zhang, Chun-Yu; Zhang, Ling; Tang, Xiao-Ying; Yang, Ying-Ying

2018-04-01

We report on a passively mode-locked Nd : LuVO4 laser using a type saturable absorber of tungsten disulfide (WS2) fabricated by chemical vapor deposition method. At the pump power of 3.3 W, 1.18-W average output power of continuous-wave mode-locked laser with optical conversion efficiency of 36% was achieved. To the best of our knowledge, this is the highest output power of passively mode-locked solid-state laser based on WS2. The repetition rate of passively mode-locked pulse was 80 MHz with the pulse energy of 14.8 nJ. Our experimental results show that WS2 is an excellent type of saturable absorber.

Watt-level passively Q-switched double-cladding fiber laser based on graphene oxide saturable absorber.

Science.gov (United States)

Yu, Zhenhua; Song, Yanrong; Dong, Xinzheng; Li, Yanlin; Tian, Jinrong; Wang, Yonggang

2013-10-10

A watt-level passively Q-switched ytterbium-doped double-cladding fiber laser with a graphene oxide (GO) absorber was demonstrated. The structure of the GO saturable absorber mirror (GO-SAM) was of the sandwich type. A maximum output power of 1.8 W was obtained around a wavelength of 1044 nm. To the best of our knowledge, this is the highest output power in Q-switched fiber lasers based on a GO saturable absorber. The pure GO was protected from the oxygen in the air so that the damage threshold of the GO-SAM was effectively raised. The gain fiber was a D-shaped ytterbium-doped double-cladding fiber. The pulse repetition rates were tuned from 120 to 215 kHz with pump powers from 3.89 to 7.8 W. The maximum pulse energy was 8.37 μJ at a pulse width of 1.7 μs.

Quantum-dot saturable absorber and Kerr-lens mode-locked Yb:KGW laser with >450  kW of peak power.

Science.gov (United States)

Akbari, R; Zhao, H; Fedorova, K A; Rafailov, E U; Major, A

2016-08-15

The hybrid action of quantum-dot saturable absorber and Kerr-lens mode locking in a diode-pumped Yb:KGW laser was demonstrated. Using a quantum-dot saturable absorber with a 0.7% (0.5%) modulation depth, the mode-locked laser delivered 90 fs (93 fs) pulses with 3.2 W (2.9 W) of average power at the repetition rate of 77 MHz, corresponding to 462 kW (406 kW) of peak power and 41 nJ (38 nJ) of pulse energy. To the best of our knowledge, this represents the highest average and peak powers generated to date from quantum-dot saturable absorber-based mode-locked lasers.

Nanosecond-pulsed Q-switched Nd:YAG laser at 1064 nm with a gold nanotriangle saturable absorber

Science.gov (United States)

Chen, Xiaohan; Li, Ping; Dun, Yangyang; Song, Teng; Ma, Baomin

2018-06-01

Gold nanotriangles (GNTs) were successfully employed as a saturable absorber (SA) to achieve passively Q-switched lasers for the first time. The performance of the Q-switched Nd:YAG laser at 1064 nm has been systematically investigated. The corresponding shortest pulsewidth, the threshold pump power and the maximum Q-switched average output power were 275.5 ns, 1.37 W, and 171 mW, respectively. To our knowledge, this is the shortest pulsewidth and the lowest threshold in a passively Q-switched laser at approximately 1.1 µm based on a gold nanoparticle SA (GNPs-SA). Our experimental results proved that the GNTs-SA can be used as a promising saturable absorber for nanosecond-pulsed lasers.

Black phosphorus saturable absorber for Q-switched Er:YAG laser at 1645 nm

Science.gov (United States)

Guo, Lei; Li, Tao; Zhang, Shuaiyi; Wang, Mingjian; Yang, Kejian; Fan, Mingqi; Zhao, Shengzhi; Li, Ming

2018-03-01

A Q-switched Er:YAG solid-state laser at 1645 nm based on black phosphorus (BP) saturable absorbers (SAs) was demonstrated firstly to our knowledge. The BP-SA was fabricated by drop-casting BP nanoplatelets dispersion on a YAG substrate and corresponding saturable absorption properties were characterized at 1.6 μm. By employing as-prepared BP-SAs, stable Q-switched laser operations were achieved with a pulse width of 2.8 μs and a repetition rate of 34 kHz, corresponding to the average output power of 0.33 W. The results verify that BP-SAs have great potential for pulsed 1.6 μm lasers.

Black phosphorus saturable absorber for ultrashort pulse generation

Energy Technology Data Exchange (ETDEWEB)

Sotor, J., E-mail: jaroslaw.sotor@pwr.edu.pl; Sobon, G.; Abramski, K. M. [Laser and Fiber Electronics Group, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, Wroclaw 50-370 (Poland); Macherzynski, W.; Paletko, P. [Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, Wroclaw 50-372 (Poland)

2015-08-03

Low-dimensional materials, due to their unique and versatile properties, are very interesting for numerous applications in electronics and optoelectronics. Recently rediscovered black phosphorus, with a graphite-like layered structure, can be effectively exfoliated up to the single atomic layer called phosphorene. Contrary to graphene, it possesses a direct band gap controllable by the number of stacked atomic layers. For those reasons, black phosphorus is now intensively investigated and can complement or replace graphene in various photonics and electronics applications. Here, we demonstrate that black phosphorus can serve as a broadband saturable absorber and can be used for ultrashort optical pulse generation. The mechanically exfoliated ∼300 nm thick layers of black phosphorus were transferred onto the fiber core, and under pulsed excitation at 1560 nm wavelength, its transmission increases by 4.6%. We have demonstrated that the saturable absorption of black phosphorus is polarization sensitive. The fabricated device was used to mode-lock an Er-doped fiber laser. The generated optical solitons with the 10.2 nm bandwidth and 272 fs duration were centered at 1550 nm. The obtained results unambiguously show that black phosphorus can be effectively used for ultrashort pulse generation with performances similar or even better than currently used graphene or carbon nanotubes. This application of black phosphorus proves its great potential to future practical use in photonics.

Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires

Science.gov (United States)

Luo, Jun-Wei; Li, Shu-Shen; Zunger, Alex

2017-09-01

The electric field manipulation of the Rashba spin-orbit coupling effects provides a route to electrically control spins, constituting the foundation of the field of semiconductor spintronics. In general, the strength of the Rashba effects depends linearly on the applied electric field and is significant only for heavy-atom materials with large intrinsic spin-orbit interaction under high electric fields. Here, we illustrate in 1D semiconductor nanowires an anomalous field dependence of the hole (but not electron) Rashba effect (HRE). (i) At low fields, the strength of the HRE exhibits a steep increase with the field so that even low fields can be used for device switching. (ii) At higher fields, the HRE undergoes a rapid transition to saturation with a giant strength even for light-atom materials such as Si (exceeding 100 meV Å). (iii) The nanowire-size dependence of the saturation HRE is rather weak for light-atom Si, so size fluctuations would have a limited effect; this is a key requirement for scalability of Rashba-field-based spintronic devices. These three features offer Si nanowires as a promising platform for the realization of scalable complementary metal-oxide-semiconductor compatible spintronic devices.

Q-switched Yb3+:YAG laser using plasmonic Cu2-xSe quantum dots as saturable absorbers

Science.gov (United States)

Wang, Yimeng; Zhan, Yi; Lee, Sooho; Wang, Li; Zhang, Xinping

2018-04-01

Cu2-xSe quantum dots (QDs) were synthesized by organometallic synthesis methods. Due to heavy self-doping, the Cu2-xSe QDs exhibit particle plasmon resonance in the near-infrared. Transient absorption spectroscopic investigation revealed strong nonlinear optical absorption and bleaching performance of the QDs under femtosecond pulse excitation, which enabled the Cu2-xSe QDs to be excellent saturable absorbers and applied in Q-switched or mode-locked lasers. A passively Q-switched Yb3+:YAG solid-state laser at 1.03 μm was achieved by coating Cu2-xSe QDs as saturable absorbers onto one of the output coupler of the V-shaped linear cavity.

Free-standing nano-scale graphite saturable absorber for passively mode-locked erbium doped fiber ring laser

International Nuclear Information System (INIS)

Lin, Y-H; Lin, G-R

2012-01-01

The free-standing graphite nano-particle located between two FC/APC fiber connectors is employed as the saturable absorber to passively mode-lock the ring-type Erbium-doped fiber laser (EDFL). The host-solvent-free graphite nano-particles with sizes of 300 – 500 nm induce a comparable modulation depth of 54%. The interlayer-spacing and lattice fluctuations of polished graphite nano-particles are observed from the weak 2D band of Raman spectrum and the azimuth angle shift of –0.32 ° of {002}-orientation dependent X-ray diffraction peak. The graphite nano-particles mode-locked EDFL generates a 1.67-ps pulsewidth at linearly dispersion-compensated regime with a repetition rate of 9.1 MHz. The time-bandwidth product of 0.325 obtained under a total intra-cavity group-delay-dispersion of –0.017 ps 2 is nearly transform-limited. The extremely high stability of the nano-scale graphite saturable absorber during mode-locking is observed at an intra-cavity optical energy density of 7.54 mJ/cm 2 . This can be attributed to its relatively high damage threshold (one order of magnitude higher than the graphene) on handling the optical energy density inside the EDFL cavity. The graphite nano-particle with reduced size and sufficient coverage ratio can compete with other fast saturable absorbers such as carbon nanotube or graphene to passively mode-lock fiber lasers with decreased insertion loss and lasing threshold

Passivation of black phosphorus saturable absorbers for reliable pulse formation of fiber lasers.

Science.gov (United States)

Na, Dongsoo; Park, Kichul; Park, Ki-Hwan; Song, Yong-Won

2017-11-24

Black phosphorus (BP) has attracted increasing attention due to its unique electrical properties. In addition, the outstanding optical nonlinearity of BP has been demonstrated in various ways. Its functionality as a saturable absorber, in particular, has been validated in demonstrations of passive mode-locked lasers. However, normally, the performance of BP is degraded eventually by both thermal and chemical damage in ambient conditions. The passivation of BP is the critical issue to guarantee a stable performance of the optical devices. We quantitatively characterized the mode-locked lasers operated by BP saturable absorbers with diversified passivation materials such as polydimethylsiloxane (PDMS) or Al 2 O 3 , considering the atomic structure of the materials, and therefore the hydro-permeability of the passivation layers. Unlike the BP layers without passivation, we demonstrated that the Al 2 O 3 -passivated BP layer was protected from the surface oxidation reaction in the long-term, and the PDMS-passivated one had a short-term blocking effect. The quantitative analysis showed that the time-dependent characteristics of the pulsed laser without passivation were changed with respect to the pulse duration, spectral width, and time-bandwidth product displaying 550 fs, 2.8 nm, and 0.406, respectively. With passivation, the changes were limited to <43 fs, <0.3 nm, and <0.012, respectively.

Passivation of black phosphorus saturable absorbers for reliable pulse formation of fiber lasers

Science.gov (United States)

Na, Dongsoo; Park, Kichul; Park, Ki-Hwan; Song, Yong-Won

2017-11-01

Black phosphorus (BP) has attracted increasing attention due to its unique electrical properties. In addition, the outstanding optical nonlinearity of BP has been demonstrated in various ways. Its functionality as a saturable absorber, in particular, has been validated in demonstrations of passive mode-locked lasers. However, normally, the performance of BP is degraded eventually by both thermal and chemical damage in ambient conditions. The passivation of BP is the critical issue to guarantee a stable performance of the optical devices. We quantitatively characterized the mode-locked lasers operated by BP saturable absorbers with diversified passivation materials such as polydimethylsiloxane (PDMS) or Al2O3, considering the atomic structure of the materials, and therefore the hydro-permeability of the passivation layers. Unlike the BP layers without passivation, we demonstrated that the Al2O3-passivated BP layer was protected from the surface oxidation reaction in the long-term, and the PDMS-passivated one had a short-term blocking effect. The quantitative analysis showed that the time-dependent characteristics of the pulsed laser without passivation were changed with respect to the pulse duration, spectral width, and time-bandwidth product displaying 550 fs, 2.8 nm, and 0.406, respectively. With passivation, the changes were limited to <43 fs, <0.3 nm, and <0.012, respectively.

Space inhomogeneity and detuning effects in a laser with a saturable absorber: a first-order approximation

Energy Technology Data Exchange (ETDEWEB)

Garcia-Fernandez, P.; Velarde, M.G.

1988-05-01

To a first approximation the effects of detuning and/or space inhomogeneity on the stability domain of a model for a laser with a saturable absorber are presented. It appears that the space dependence increases the domain of the emissionless state, thus delaying the laser action.

Diode-pumped passively Q-switched Nd:GdTaO4 laser based on tungsten disulfide nanosheets saturable absorber at 1066 nm

Science.gov (United States)

Li, M. X.; Jin, G. Y.; Li, Y.

2018-05-01

In this paper, we investigated the passively Q-switched Nd:GdTaO4 laser based on tungsten disulfide (WS2) saturable absorber (SA). The preparation method of WS2 SA was to attach the WS2-alcohol dispersion onto the quartz substrates. The diode-pumped passively Q-switched Nd:GdTaO4 laser operated at a central wavelength of 1066 nm. The stable pulse output could be obtained at the single pulse width of 560 ns. In a word, WS2 seems to be a suitable saturable absorber for solid state lasers.

Output power PDF of a saturated semiconductor optical amplifier: Second-order noise contributions by path integral method

DEFF Research Database (Denmark)

Öhman, Filip; Mørk, Jesper; Tromborg, Bjarne

2007-01-01

We have developed a second-order small-signal model for describing the nonlinear redistribution of noise in a saturated semiconductor optical amplifier. In this paper, the details of the model are presented. A numerical example is used to compare the model to statistical simulations. We show that...

Semiconductor-based Multilayer Selective Solar Absorber for Unconcentrated Solar Thermal Energy Conversion.

Science.gov (United States)

Thomas, Nathan H; Chen, Zhen; Fan, Shanhui; Minnich, Austin J

2017-07-13

Solar thermal energy conversion has attracted substantial renewed interest due to its applications in industrial heating, air conditioning, and electricity generation. Achieving stagnation temperatures exceeding 200 °C, pertinent to these technologies, with unconcentrated sunlight requires spectrally selective absorbers with exceptionally low emissivity in the thermal wavelength range and high visible absorptivity for the solar spectrum. In this Communication, we report a semiconductor-based multilayer selective absorber that exploits the sharp drop in optical absorption at the bandgap energy to achieve a measured absorptance of 76% at solar wavelengths and a low emittance of approximately 5% at thermal wavelengths. In field tests, we obtain a peak temperature of 225 °C, comparable to that achieved with state-of-the-art selective surfaces. With straightforward optimization to improve solar absorption, our work shows the potential for unconcentrated solar thermal systems to reach stagnation temperatures exceeding 300 °C, thereby eliminating the need for solar concentrators for mid-temperature solar applications such as supplying process heat.

All-polarization maintaining erbium fiber laser based on carbon nanowalls saturable absorber

Science.gov (United States)

Kurata, Shintaro; Izawa, Jun; Kawaguchi, Norihito

2018-02-01

We report a soliton mode locked femtosecond oscillation with all-polarization maintaining erbuim doped fiber laser based on Carbon Nanowalls saturable absorber (CNWs SA). To improve the stability and the capability of the oscillator, the all-polarization maintaining(all-PM) fiber is generally used since PM fiber is tolerant of stretches and bends. The saturable absorber is an optical device that placed in a laser cavity to suppress continuous wave operation to promote cooperation between many modes to sustain ultrashort pulse operation. We apply CNWs for the material of SAs in our oscillator. CNWs are one of the nanocarbon materials, which are a high-aspect-ratio structure in the cross-section, where, although their width and height range in a few micrometers, the thickness is as small as ten nanometers or so. A sheet of CNWs is made up of nano-size graphite grain aggregates. Then CNWs structure is expected to have a high absorption to the incident light and large modulation depth due to a small number of carbon layers as well as CNT and Graphene. With this all-PM fiber laser oscillator based on CNWs SA, the soliton mode-locked laser oscillated with 66.3MHz repetition frequency and its spectrum width is 5.6nm in FWHM. Average output power is 8.1mW with 122.5mW laser diode pump power. In addition, the laser amplification system with erbium-doped fiber is constructed and amplifies the femtosecond pulse laser into 268.2mW and 3000mW pumping power.

Distributed Intrusion Sensor Using DFB Laser with Optical Feedback and Saturable Absorber

Directory of Open Access Journals (Sweden)

Kyoo Nam Choi

2018-01-01

Full Text Available Characteristics of a distributed intrusion sensor using a coherent DFB laser diode with an external optical feedback and saturable absorber were experimentally investigated. The stimulus at a location of 2 km using a PZT transducer placed the location of a simulated intruder in Φ-OTDR trace after averaging 32 times. Field trials demonstrated the detection of a vehicle and a pedestrian crossing above the sensing line and a loop in a burial depth of 50 cm. This distributed intrusion sensor using a coherent DFB laser diode as the light source had the advantages of a simple structure and intruder detection capability at the underground burial location.

All-fiber Yb-doped fiber laser passively mode-locking by monolayer MoS2 saturable absorber

Science.gov (United States)

Zhang, Yue; Zhu, Jianqi; Li, Pingxue; Wang, Xiaoxiao; Yu, Hua; Xiao, Kun; Li, Chunyong; Zhang, Guangyu

2018-04-01

We report on an all-fiber passively mode-locked ytterbium-doped (Yb-doped) fiber laser with monolayer molybdenum disulfide (ML-MoS2) saturable absorber (SA) by three-temperature zone chemical vapor deposition (CVD) method. The modulation depth, saturation fluence, and non-saturable loss of this ML-MoS2 are measured to be 3.6%, 204.8 μJ/cm2 and 6.3%, respectively. Based on this ML-MoS2SA, a passively mode-locked Yb-doped fiber laser has been achieved at 979 nm with pulse duration of 13 ps and repetition rate of 16.51 MHz. A mode-locked fiber laser at 1037 nm is also realized with a pulse duration of 475 ps and repetition rate of 26.5 MHz. To the best of our knowledge, this is the first report that the ML-MoS2 SA is used in an all-fiber Yb-doped mode-locked fiber laser at 980 nm. Our work further points the excellent saturable absorption ability of ML-MoS2 in ultrafast photonic applications.

Bismuth telluride topological insulator nanosheet saturable absorbers for q-switched mode-locked Tm:ZBLAN waveguide lasers

Energy Technology Data Exchange (ETDEWEB)

Jiang, Xiantao; Gross, Simon; Withford, Michael J.; Fuerbach, Alexander [Centre for Ultrahigh bandwidth Devices for Optical Systems (CUDOS) and MQ Photonics Research Centre, Dept. of Physics and Astronomy, Macquarie Univ., NSW (Australia); Zhang, Han; Guo, Zhinan [SZU-NUS Collaborative Innovation Centre for Optoelectronic Science and Technology, Key Lab. of Optoelectronic Devices and Systems of Ministry of Education, College of Optoelectronic Engineering, Shenzhen Univ. (China)

2016-08-15

Nanosheets of bismuth telluride (Bi{sub 2}Te{sub 3}), a topological insulator material that exhibits broadband saturable absorption due to its non-trivial Dirac-cone like energy structure, are utilized to generate short pulses from Tm:ZBLAN waveguide lasers. By depositing multiple layers of a carefully prepared Bi{sub 2}Te{sub 3} solution onto a glass substrate, the modulation depth and the saturation intensity of the fabricated devices can be controlled and optimized. This approach enables the realization of saturable absorbers that feature a modulation depth of 13% and a saturation intensity of 997 kW/cm{sup 2}. For the first time to our knowledge, Q-switched mode-locked operation of a linearly polarized mid-IR ZBLAN waveguide chip laser was realized in an extended cavity configuration using the topological insulator Bi{sub 2}Te{sub 3}. The maximum average output power of the laser is 16.3 mW and the Q-switched and mode-locked repetition rates are 44 kHz and 436 MHz, respectively. (copyright 2016 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Nanographene-Based Saturable Absorbers for Ultrafast Fiber Lasers

Directory of Open Access Journals (Sweden)

Hsin-Hui Kuo

2014-01-01

Full Text Available The generation of femtosecond pulse laser in the erbium-doped fiber laser system is presented by integrating of the nanographene-based saturable absorbers (SAs. A simplified method of dispersed nanographene-based SAs side-polished fiber device with controllable polished length and depth was also developed. The dependence of geometry of a graphene-deposited side-polished fiber device on optical nonlinear characteristics and on the performance of the MLFL was screened. We found that the 10 mm polished length with 1.68 dB insertion loss had the highest modulation depth (MD of 1.2%. A stable MLFL with graphene-based SAs employing the optimized side-polished fiber device showed a pulse width, a 3 dB bandwidth, a time-bandwidth product (TBP, a repetition rate, and pulse energy of 523 fs, 5.4 nm, 0.347, 16.7 MHz, and 0.18 nJ, respectively, at fundamental soliton-like operation. The femtosecond pulse laser is achieved by evanescent field coupling through graphene-deposited side-polished fiber devices in the laser cavity. This study demonstrates that the polished depth is the key fabrication geometric parameter affecting the overall optical performance and better results exist within the certain polished range.

Moving localized structures and spatial patterns in quadratic media with a saturable absorber

International Nuclear Information System (INIS)

Tlidi, M; Taki, M; Berre, M Le; Reyssayre, E; Tallet, A; Di Menza, L

2004-01-01

For near the first lasing threshold, we give a detailed derivation of a real order parameter equation for the degenerate optical parametric oscillator with a saturable absorber. For this regime, we study analytically the role of the quasi-homogeneous neutral mode in the pattern formation process. We show that this effect stabilized the hexagonal patterns below the lasing threshold. More importantly, we find numerically that when Turing and Hopf bifurcations interact, a stable moving asymmetric localized structure with a constant transverse velocity is generated. The formation of the moving localized structures is analysed for both the propagation and the mean field models. A quantitative confrontation of the two models is discussed

Direct growth of graphene on quartz substrate as saturable absorber for femtosecond solid-state laser

International Nuclear Information System (INIS)

Xu, S C; Man, B Y; Jiang, S Z; Chen, C S; Liu, M; Yang, C; Gao, S B; Zhang, C; Feng, D J; Huang, Q J; Hu, G D; Chen, X F

2014-01-01

We present a novel method for the direct metal-free growth of graphene on quartz substrate. The direct-grown graphene yields excellent nonlinear saturable absorption properties and is demonstrated to be suitable as a saturable absorber (SA) for an ultrafast solid-state laser. Nearly Fourier-limited 367 fs was obtained at a central wavelength of 1048 nm with a repetition rate of 105.7 MHz. At a pump power of 7.95 W, the average output power was 1.93 W and the highest pulse energy reached 18.3 nJ, with a peak power of 49.8 kW. Our work opens an easy route for making a reliable graphene SA with a mode-locking technique and also displays an exciting prospect in making low-cost and ultrafast lasers. (letter)

Initiation of explosive conversions in energy-saturated nanoporous silicon-based compounds with fast semiconductor switches and energy-releasing elements

Science.gov (United States)

Savenkov, G. G.; Kardo-Sysoev, A. F.; Zegrya, A. G.; Os'kin, I. A.; Bragin, V. A.; Zegrya, G. G.

2017-10-01

The first findings concerning the initiation of explosive conversions in energy-saturated nanoporous silicon-based compounds via the electrical explosion of a semiconductor bridge are presented. The obtained results indicate that the energy parameters of an explosive conversion depend on the mass of a combustible agent—namely, nanoporous silicon—and the silicon-doping type.

Digital Alloy Absorber for Photodetectors

Science.gov (United States)

Hill, Cory J. (Inventor); Ting, David Z. (Inventor); Gunapala, Sarath D. (Inventor)

2016-01-01

In order to increase the spectral response range and improve the mobility of the photo-generated carriers (e.g. in an nBn photodetector), a digital alloy absorber may be employed by embedding one (or fraction thereof) to several monolayers of a semiconductor material (insert layers) periodically into a different host semiconductor material of the absorber layer. The semiconductor material of the insert layer and the host semiconductor materials may have lattice constants that are substantially mismatched. For example, this may performed by periodically embedding monolayers of InSb into an InAsSb host as the absorption region to extend the cutoff wavelength of InAsSb photodetectors, such as InAsSb based nBn devices. The described technique allows for simultaneous control of alloy composition and net strain, which are both key parameters for the photodetector operation.

Stable optical soliton in the ring-cavity fiber system with carbon nanotube as saturable absorber

Science.gov (United States)

Li, Bang-Qing; Ma, Yu-Lan; Yang, Tie-Mei

2018-01-01

Main attention focuses on the theoretical study of the ring-cavity fiber laser system with carbon nanotubes (CNT) as saturable absorber (SA). The system is modelled as a non-standard Schrödinger equation with the coefficients blended real and imaginary numbers. New stable exact soliton solution is constructed by the bilinear transformation method for the system. The influences of the key parameters related to CNTs and SA on the optical pulse soliton are discussed in simulation. The soliton amplitude and phase can be tuned by choosing suitable parameters.

Characterization of highly stacked InAs quantum dot layers on InP substrate for a planar saturable absorber at 1.5 μm band

International Nuclear Information System (INIS)

Inoue, Jun; Akahane, Kouichi; Yamamoto, Naokatsu; Isu, Toshiro; Tsuchiya, Masahiro

2006-01-01

We examined the absorption saturation properties in the 1.5 μm band of novel highly stacked InAs quantum dot layers. The transmission change at vertical incidence based on the saturable absorption of the quantum dots was more than 1%. This value is as large as the reflection changes of previously reported 1-μm-band quantum dot saturable absorber with interference enhancement. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Tm-doped fiber laser mode-locking with MoS2-polyvinyl alcohol saturable absorber

Science.gov (United States)

Cao, Liming; Li, Xing; Zhang, Rui; Wu, Duanduan; Dai, Shixun; Peng, Jian; Weng, Jian; Nie, Qiuhua

2018-03-01

We have designed an all-fiber passive mode-locking thulium-doped fiber laser that uses molybdenum disulfide (MoS2) as a saturable absorber (SA) material. A free-standing few-layer MoS2-polyvinyl alcohol (PVA) film is fabricated by liquid phase exfoliation (LPE) and is then transferred onto the end face of a fiber connector. The excellent saturable absorption of the fabricated MoS2-based SA allows the laser to output soliton pulses at a pump power of 500 mW. Fundamental frequency mode-locking is realized at a repetition frequency of 13.9 MHz. The central wavelength is 1926 nm, the 3 dB spectral bandwidth is 2.86 nm and the pulse duration is 1.51 ps. Additionally, third-order harmonic mode-locking of the laser is also achieved. The pulse duration is 1.33 ps, which is slightly narrower than the fundamental frequency mode-locking bandwidth. The experimental results demonstrate that the few-layer MoS2-PVA SA is promising for use in 2 μm laser systems.

Stable Single Polarization, Single Frequency, and Linear Cavity Er-Doped Fiber Laser Using a Saturable Absorber

International Nuclear Information System (INIS)

Li Qi; Yan Feng-Ping; Peng Wan-Jing; Feng Su-Chun; Feng Ting; Tan Si-Yu; Liu Peng

2013-01-01

A simple approach for stable single polarization, single frequency, and linear cavity erbium doped fiber laser is proposed and demonstrated. A Fabry—Pérot filter, polarizer and saturable absorber are used together to ensure stable single frequency, single polarization operation. The optical signal-to-noise ratio of the laser is approximately 57 dB, and the Lorentz linewidth is 13.9 kHz. The polarization state of the laser with good stability is confirmed and the degree of polarization is >99%

Passively Q-switched of EDFL employing multi-walled carbon nanotubes with diameter less than 8 nm as saturable absorber

Directory of Open Access Journals (Sweden)

Zuikafly Siti Nur Fatin

2017-01-01

Full Text Available The paper demonstrates passively Q-switched erbium-doped fiber laser implementing multiwalled carbon nanotubes (MWCNTs based saturable absorber. The paper is the first to report the use of the MWCNTs with diameter less than 8 nm as typically, the diameter used is 10 to 20 nm. The MWCNTs is incorporated with water soluble host polymer, polyvinyl alcohol (PVA to produce a MWCNTs polymer composite thin film which is then sandwiched between two fiber connectors. The fabricated SA is employed in the laser experimental setup in ring cavity. The Q-switching regime started at threshold pump power of 103 mW and increasable to 215 mW. The stable pulse train from 41.6 kHz to 76.92 kHz with maximum average output power and pulse energy of 0.17 mW and 3.39 nJ are produced. The shortest pulse width of 1.9 μs is obtained in the proposed experimental work, making it the lowest pulse width ever reported using MWCNTs-based saturable absorber.

Dark solitons in erbium-doped fiber lasers based on indium tin oxide as saturable absorbers

Science.gov (United States)

Guo, Jia; Zhang, Huanian; Li, Zhen; Sheng, Yingqiang; Guo, Quanxin; Han, Xile; Liu, Yanjun; Man, Baoyuan; Ning, Tingyin; Jiang, Shouzhen

2018-04-01

Dark solitons, which have good stability, long transmission distance and strong anti-interference ability. By using a coprecipitation method, the high quality indium tin oxide (ITO) were prepared with an average diameter of 34.1 nm. We used a typical Z-scan scheme involving a balanced twin-detector measurement system to investigated nonlinear optical properties of the ITO nanoparticles. The saturation intensity and modulation depths are 13.21 MW/cm2 and 0.48%, respectively. In an erbium-doped fiber (EDF) lasers, we using the ITO nanoparticles as saturable absorber (SA), and the formation of dark soliton is experimentally demonstrated. The generated dark solitons are centered at the wavelength of 1561.1 nm with a repetition rate of 22.06 MHz. Besides, the pulse width and pulse-to-pulse interval of the dark solitons is ∼1.33ns and 45.11 ns, respectively. These results indicate that the ITO nanoparticles is a promising nanomaterial for ultrafast photonics.

Saturable absorber Q- and gain-switched all-Yb3+ all-fiber laser at 976 and 1064 nm.

Science.gov (United States)

Tsai, Tzong-Yow; Fang, Yen-Cheng; Huang, Huai-Min; Tsao, Hong-Xi; Lin, Shih-Ting

2010-11-08

We demonstrate a novel passively pulsed all-Yb3+ all-fiber laser pumped by a continuous-wave 915-nm pump laser diode. The laser was saturable absorber Q-switched at 976 nm and gain-switched at 1064 nm, using the method of mode-field-area mismatch. With a pump power of 
105 mW, the laser iteratively produced a 976-nm pulse with an energy of 2.8 μJ and a duration of 280 ns, followed by a 1064-nm pulse with 1.1 μJ and a 430-ns duration at a repetition rate of 9 kHz. A set of rate equations was established to simulate the self-balancing mechanism and the correlation between the Q- and gain-switched photon numbers and the populations of the gain and absorber fibers.

Photocatalytic oxidation of organic compounds in a hybrid system composed of a molecular catalyst and visible light-absorbing semiconductor.

Science.gov (United States)

Zhou, Xu; Li, Fei; Li, Xiaona; Li, Hua; Wang, Yong; Sun, Licheng

2015-01-14

Photocatalytic oxidation of organic compounds proceeded efficiently in a hybrid system with ruthenium aqua complexes as catalysts, BiVO4 as a light absorber, [Co(NH3)5Cl](2+) as a sacrificial electron acceptor and water as an oxygen source. The photogenerated holes in the semiconductor are used to oxidize molecular catalysts into the high-valent Ru(IV)=O intermediates for 2e(-) oxidation.

Gold nanorod saturable absorber for passive mode-locking at 1 μm wavelength

International Nuclear Information System (INIS)

Kang, Z; Li, Q; Gao, X J; Jia, Z X; Qin, G S; Qin, W P; Zhang, L; Feng, Y

2014-01-01

Gold nanorods (GNRs) were used as a saturable absorber (SA) for passive mode-locking at 1 μm wavelength. The GNR-SA film was fabricated by mixing GNRs with sodium carboxymethylcellulose. The longitudinal surface plasmon resonance absorption of GNRs was used to induce mode-locking. By using the GNR-SA film, stable passive mode-locking at 1039 nm was experimentally demonstrated in an ytterbium-doped fiber laser cavity pumped by a 980 nm laser diode. The laser produced ∼440 ps pulses with a repetition rate of 36.6 MHz and an average output power of ∼1.25 mW for a pump power of ∼82 mW. (letter)

Passively Q-switched 1.6 µm Er:YAG laser with a γ-Ga2O3:Co-based glass-ceramics as a saturable absorber

Science.gov (United States)

Shi, Yang; Gao, Chunqing; Ye, Qing; Wang, Shuo; Wang, Qing; Gao, Mingwei; Loiko, Pavel; Skoptsov, Nikolai; Dymshits, Olga; Zhilin, Alexander; Zapalova, Svetlana; Tsenter, Marina; Vitkin, Vladimir; Mateos, Xavier; Yumashev, Konstantin

2018-04-01

A resonantly pumped passively Q-switched Er:YAG laser operating at 1.617 and 1.645 µm is reported with γ-Ga2O3:Co2+-based glass-ceramics (GCs) as a saturable absorber. The maximum average output power achieved from this laser was 273 mW; the highest pulse energy was 5.9 µJ, corresponding to a pulse duration of 3.0 µs at a repetition frequency of 31 kHz. To the best of our knowledge, this is the first time to use the γ-Ga2O3:Co2+-based GC as a passive Q-switcher for Er:YAG lasers and this is also the first time to obtain 1.617 µm and 1.645 µm pulses with a GC-based saturable absorber.

An Nd:YLF laser Q-switched by a monolayer-graphene saturable-absorber mirror

International Nuclear Information System (INIS)

Matía-Hernando, Paloma; Guerra, José Manuel; Weigand, Rosa

2013-01-01

We demonstrate Q-switched operation of a transversely diode-pumped Nd:YLF (yttrium lithium fluoride) laser using chemical vapour deposition-grown large-area monolayer graphene transferred to a dielectric saturable-absorber mirror (G-SAM). The resulting compact design operates at 1047 nm with 2.5 μs pulses in a 100% modulation Q-switch regime with an average and very stable output power of 0.5 W. Different cavity lengths have been employed and the results are compared against a theoretical model based on rate equations, evidencing the role of transverse pumping in the system. The model also reveals that monolayer graphene effectively leads to shorter and more powerful pulses compared to those with multilayer graphene. These results establish the potential of single-layer graphene for providing a reliable and efficient Q-switch mechanism in solid-state lasers. (paper)

Microfiber-based gold nanorods as saturable absorber for femtosecond pulse generation in a fiber laser

Energy Technology Data Exchange (ETDEWEB)

Wang, Xu-De [Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou, Guangdong 510006 (China); School of Physics and Electronic Information, Huaibei Normal University, Huaibei, Anhui 235000 (China); Luo, Zhi-Chao; Liu, Hao; Liu, Meng; Luo, Ai-Ping, E-mail: luoaiping@scnu.edu.cn; Xu, Wen-Cheng, E-mail: xuwch@scnu.edu.cn [Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou, Guangdong 510006 (China)

2014-10-20

We reported on the femtosecond pulse generation from an erbium-doped fiber (EDF) laser by using microfiber-based gold nanorods (GNRs) as saturable absorber (SA). By virtue of the geometric characteristic of microfiber-based GNRs, the optical damage threshold of GNRs-SA could be greatly enhanced. The microfiber-based GNRs-SA shows a modulation depth of 4.9% and a nonsaturable loss of 21.1%. With the proposed GNRs-SA, the fiber laser emitted a mode-locked pulse train with duration of ∼887 fs. The obtained results demonstrated that the GNRs deposited microfiber could indeed serve as a high-performance SA towards the practical applications in the field of ultrafast photonics.

L-band passively harmonic mode-locked fiber laser based on a graphene saturable absorber

International Nuclear Information System (INIS)

Du, J; Zhang, S M; Li, H F; Meng, Y C; Li, X L; Hao, Y P

2012-01-01

We have proposed and demonstrated an L-band passively harmonic mode-locked fiber laser based on a graphene saturable absorber (SA). By adjusting the pump power and the polarization controller, we have experimentally observed L-band fundamental and harmonic mode-locked optical pulses. The fundamental optical pulse has the duration of 1.3 ps, and the maximum average output power of 13.16 mW at the incident pump power of 98.8 mW. The order of the harmonic mode-locked optical pulses can be changed over the range from the second to the fourth. From the experimental results, we deduced that the likely origin of the harmonic mode-locked self-stabilization was the result of global and local soliton interactions induced by the unstability continuous wave (CW) components

Nonlinear Gain Saturation in Active Slow Light Photonic Crystal Waveguides

DEFF Research Database (Denmark)

Chen, Yaohui; Mørk, Jesper

2013-01-01

We present a quantitative three-dimensional analysis of slow-light enhanced traveling wave amplification in an active semiconductor photonic crystal waveguides. The impact of slow-light propagation on the nonlinear gain saturation of the device is investigated.......We present a quantitative three-dimensional analysis of slow-light enhanced traveling wave amplification in an active semiconductor photonic crystal waveguides. The impact of slow-light propagation on the nonlinear gain saturation of the device is investigated....

Terahertz Nonlinear Optics in Semiconductors

DEFF Research Database (Denmark)

Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

2013-01-01

We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

Directory of Open Access Journals (Sweden)

Andreas Schmitt-Sody

2008-01-01

Full Text Available We report on hybrid mode-locked laser operation of a tapered semiconductor amplifier in an external ring cavity, generating pulses as short as 0.5 ps at 88.1 MHz with an average power of 60 mW. The mode locking is achieved through a combination of a multiple quantum well saturable absorber (>10% modulation depth and an RF current modulation. This designed laser has 20 nm tuning bandwidth in continuous wave and 10 nm tuning bandwidth in mode locking around 786 nm center wavelength at constant temperature.

Metal-semiconductor, composite radiation detectors

International Nuclear Information System (INIS)

Orvis, W.J.; Yee, J.H.; Fuess, D.A.

1991-12-01

In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high- efficiency gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, we have modeled parts of the detector and have nearly completed a prototype device. 2 refs

Patterning via optical-saturable transformations: A review and simple simulation model

Energy Technology Data Exchange (ETDEWEB)

Cantu, Precious; Menon, Rajesh, E-mail: cantu@eng.utah.edu [Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Andrew, Trisha L. [Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

2014-11-10

Most of the nanoscale fabrication in the semiconductor industry is based on patterning with scanning-electron beam lithography (SEBL). Although this approach is very versatile and has very high resolution, it is intrinsically a serial writing process, and therefore, relatively slow. Our group has been investigating alternative nano-fabrication techniques, adapted from ideas of saturating optical transitions such as those used in stimulated emission-depletion microscopy and related methods, and optical interference lithography. Linewidths and resolutions on the scale of a few tens of nanometers and below are highly desirable for various applications in nanotechnology. However, the spatial resolution of optical lithography is restricted by diffraction. In the past, we developed absorbance modulation to overcome this limit. This approach utilizes photochromic molecules that can be optically switched between two thermally stable states, one opaque and the other transparent. However, absorbance modulation is limited to surface (2-D) patterning. Here, we report on an alternative approach that exploits unique combinations of spectrally selective reversible and irreversible photochemical transitions to achieve deep subwavelength resolution with potential extension to 3-dimensions. This approach, which we refer to as patterning via optical-saturable transformations have the potential for massive parallelism, enabling the creation of nanostructures and devices at a speed far surpassing what is possible with SEBL. The aim of our research is to translate the success in circumventing Abbe's diffraction limit in optical microscopy to optical lithography.

Patterning via optical-saturable transformations: A review and simple simulation model

International Nuclear Information System (INIS)

Cantu, Precious; Menon, Rajesh; Andrew, Trisha L.

2014-01-01

Most of the nanoscale fabrication in the semiconductor industry is based on patterning with scanning-electron beam lithography (SEBL). Although this approach is very versatile and has very high resolution, it is intrinsically a serial writing process, and therefore, relatively slow. Our group has been investigating alternative nano-fabrication techniques, adapted from ideas of saturating optical transitions such as those used in stimulated emission-depletion microscopy and related methods, and optical interference lithography. Linewidths and resolutions on the scale of a few tens of nanometers and below are highly desirable for various applications in nanotechnology. However, the spatial resolution of optical lithography is restricted by diffraction. In the past, we developed absorbance modulation to overcome this limit. This approach utilizes photochromic molecules that can be optically switched between two thermally stable states, one opaque and the other transparent. However, absorbance modulation is limited to surface (2-D) patterning. Here, we report on an alternative approach that exploits unique combinations of spectrally selective reversible and irreversible photochemical transitions to achieve deep subwavelength resolution with potential extension to 3-dimensions. This approach, which we refer to as patterning via optical-saturable transformations have the potential for massive parallelism, enabling the creation of nanostructures and devices at a speed far surpassing what is possible with SEBL. The aim of our research is to translate the success in circumventing Abbe's diffraction limit in optical microscopy to optical lithography

Optical Regeneration and Noise in Semiconductor Devices

DEFF Research Database (Denmark)

Öhman, Filip

2005-01-01

In this report all-optical 2R-regeneration in optical communication systems is investigated. A simple regenerator device based on concatenated semiconductor optical amplifiers (SOAs) and electro absorbers (EAs) is introduced and examined. Experiments show that the monolithic SOA-EA 2R-regenerator......In this report all-optical 2R-regeneration in optical communication systems is investigated. A simple regenerator device based on concatenated semiconductor optical amplifiers (SOAs) and electro absorbers (EAs) is introduced and examined. Experiments show that the monolithic SOA-EA 2R...

Mathematical solutions of rate equations of a laser-diode end-pumped passively Q-switched and mode locked Nd-laser with Cr4+:YAG polarized saturable absorber

International Nuclear Information System (INIS)

Abdul Ghani, B.; Hammadi, M.

2012-01-01

The intracavity frequency-doubling (IFD) of a simultaneous passively Q-switched mode-locked diode-pumped Nd 3 + - laser is studied with a polarized isotropic Cr 4 +: YAG saturable absorber. A general recurrence formula for the mode-locked pulses under the Q-switched envelope at fundamental wavelength has been reconstructed in order to analyze the temporal shape behavior of a single Q-switched envelope with mode-locking pulse trains. This formula has been derived taking into account the impact of the IFD and polarized Cr 4 +: YAG saturable absorber.The presented mathematical model describes the self-induced anisotropy appeared in the polarized Cr 4 +: YAG in the nonlinear stage of the giant pulse formation. For the anisotropic Nd 3 +: YVO 4 active medium, the generated polarized waves are assumed to be fixed through the lasing cycle. Besides, the maximum absorber initial transmission and the minimum mirror reflectivity values have been determined from the second threshold criterion. The calculated numerical results demonstrate the impact of the variation of the input laser parameters (rotational angle of the polarized crystal, absorber initial transmission and the output mirror reflectivity) on the characteristics of the output laser pulse (SH peak power, pulse width, pulse duration and shift pulse position of central mode). The calculated numerical results in this work is in good qualitative and quantitative agreement with the available experimental data reported in the references. (author)

Dispersion-induced nonlinearities in semiconductors

DEFF Research Database (Denmark)

Mørk, Jesper; Mecozzi, A.

2002-01-01

A dispersive and saturable medium is shown, under very general conditions, to possess ultrafast dynamic behaviour due to non-adiabatic polarisation dynamics. Simple analytical expressions relating the effect to the refractive index dispersion of a semiconductor ire derived and the magnitude...... of the equivalent Kerr coefficient is shown to be in qualitative agreement with measurements on active semiconductor waveguides....

Slow Light at High Frequencies in an Amplifying Semiconductor Waveguide

DEFF Research Database (Denmark)

Öhman, Filip; Yvind, Kresten; Mørk, Jesper

2006-01-01

We demonstrate slow-down of a modulated light signal in a semiconductor waveguide. Concatenated amplifying and absorbing sections simultaneously achieve both amplification and a controllable time delay at 15 GHz.......We demonstrate slow-down of a modulated light signal in a semiconductor waveguide. Concatenated amplifying and absorbing sections simultaneously achieve both amplification and a controllable time delay at 15 GHz....

Diode-Pumped Quasi-Three-Level Passively Q-Switched Nd:GGG Laser with a Codoped Nd,Cr:YAG Saturable Absorber

International Nuclear Information System (INIS)

Kun-Na, He; Chun-Qing, Gao; Zhi-Yi, Wei; Qi-Nan, Li; Zhi-Guo, Zhang; Hai-He, Jiang; Shao-Tang, Yin; Qing-Li, Zhang

2009-01-01

We demonstrate the first quasi-three-level passively Q-switched Nd:GGG laser at 937 nm using a Nd,Cr:YAG crystal as the saturable absorber. The dependences of the average output power, the repetition rate and the pulse width on the incident pump power are obtained. A maximum average output power of 1.18 W with repetition rate of 35 kHz and pulse width of 45 ns is achieved at an incident pump power of 18.3 W. The corresponding optical-to-optical and slope efficiencies are 6% and 10%, respectively

All-fibre Q-switching YDFL operation with bismuth-doped fibre as saturable absorber

Science.gov (United States)

Muhammad, A. R.; Haris, H.; Arof, H.; Tan, S. J.; Ahmad, M. T.; Harun, S. W.

2018-05-01

We demonstrate the generation of a passively Q-switched ytterbium-doped fibre laser (YDFL) using a bismuth-doped fibre (BDF) as a solid-state fibre saturable absorber (FSA) in a ring cavity. The BDF used has a wide and low absorption band of 5 dB/m at the 1.0 μm region due to the ion transition of ? that occurs around the region. When introduced into a YDFL laser cavity, a stable Q-switched pulse operation was observed and the pulse repetition rate was proportional to the input pump power. It was limited to 72.99 kHz by the maximum power that the laser diode could supply. Meanwhile, the pulse width decreased from 12.22 to 4.85 μs as the pump power was increased from 215.6 to 475.6 mW. The finding suggests that BDF could be used as a potential SA for the development of robust, compact, efficient and low cost Q-switched fibre lasers operating at 1 micron region.

Absorbed dose by a CMOS in radiotherapy

International Nuclear Information System (INIS)

Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R.; Paredes G, L. C.

2011-10-01

Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

Ultrafast nonlinear carrier dynamics in doped semiconductors in high THz fields

DEFF Research Database (Denmark)

Hoffmann, Matthias C.; Turchinovich, Dmitry

2011-01-01

THz frequency saturable absorption and intervalley carrier scattering in n-type semiconductors were observed using intensity-dependent transmission experiments as well as THz-pump—THz probe spectroscopy with ultrabroadband probe pulses.......THz frequency saturable absorption and intervalley carrier scattering in n-type semiconductors were observed using intensity-dependent transmission experiments as well as THz-pump—THz probe spectroscopy with ultrabroadband probe pulses....

Introductory semiconductor device physics

CERN Document Server

Parker, Greg

2004-01-01

ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

Absorbed dose by a CMOS in radiotherapy

Energy Technology Data Exchange (ETDEWEB)

Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L. C., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

2011-10-15

Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

Experimental and Numerical Comparison Q-Switched Fiber Laser Generation using Graphene as Saturable Absorber

Directory of Open Access Journals (Sweden)

Awang Noor Azura

2018-01-01

Full Text Available We demonstrated the comparison experimentally and numerically a compact Q-switched erbium-doped fiber (EDF laser based on graphene as a saturable absorber (SA. By optically driven deposition of graphene on a fiber core, the SA is constructed and inserted into a diode-pumped EDF laser cavity. Lasing in CW region starts at 10 mW, whereas stable self-starting Q-switching with a central wavelength of 1530 nm begins at 18 mW. In this paper, at 35 mW, the maximum pulse energy reaches at 2 μJ with pulse repetition rate of 1 MHz and the narrowest pulse width is around 10 μs is obtained. The stability of the pulse is verified from the radio-frequency (RF spectrum with a measured signal-to-noise ratio (SNR of 48 dB. In this study, the design is compared with the simulation using the Optisystem software. The output power of the experimental study is also compared with the simulation to examine the performance.

Tunable single-polarization single-longitudinal-mode erbium-doped fiber ring laser employing a CMFBG filter and saturable absorber

Science.gov (United States)

Feng, Suchun; Lu, Shaohua; Peng, Wanjing; Li, Qi; Feng, Ting; Jian, Shuisheng

2013-04-01

A tunable single-polarization single-longitudinal-mode (SLM) erbium-doped fiber ring laser is proposed and demonstrated. For the first time as we know, a chirped moiré fiber Bragg grating (CMFBG) filter with ultra-narrow transmission band and a uniform fiber Bragg grating (UFBG) are used to select the laser longitudinal mode. The stable SLM operation of the fiber laser is guaranteed by the combination of the CMFBG filter and 3 m unpumped erbium-doped fiber acting as a saturable absorber. The single polarization operation of the fiber laser is obtained by using an inline broadband polarizer. A tuning range of about 0.7 nm with about 0.1 nm step is achieved by stretching the uniform FBG.

Mode-locked Er-doped fiber laser based on PbS/CdS core/shell quantum dots as saturable absorber.

Science.gov (United States)

Ming, Na; Tao, Shina; Yang, Wenqing; Chen, Qingyun; Sun, Ruyi; Wang, Chang; Wang, Shuyun; Man, Baoyuan; Zhang, Huanian

2018-04-02

Previously, PbS/CdS core/shell quantum dots with excellent optical properties have been widely used as light-harvesting materials in solar cell and biomarkers in bio-medicine. However, the nonlinear absorption characteristics of PbS/CdS core/shell quantum dots have been rarely investigated. In this work, PbS/CdS core/shell quantum dots were successfully employed as nonlinear saturable absorber (SA) for demonstrating a mode-locked Er-doped fiber laser. Based on a film-type SA, which was prepared by incorporating the quantum dots with the polyvinyl alcohol (PVA), mode-locked Er-doped operation with a pulse width of 54 ps and a maximum average output power of 2.71 mW at the repetition rate of 3.302 MHz was obtained. Our long-time stable results indicate that the CdS shell can effectively protect the PbS core from the effect of photo-oxidation and PbS/CdS core/shell quantum dots were efficient SA candidates for demonstrating pulse fiber lasers due to its tunable absorption peak and excellent saturable absorption properties.

Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

International Nuclear Information System (INIS)

Walukiewicz, W.

1988-02-01

The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

Experimental demonstration of an Er-doped fiber ring laser mode-locked with a Tm–Ho co-doped fiber saturable absorber

International Nuclear Information System (INIS)

Tao, Mengmeng; Wu, Junjie; Wu, Yong; Yang, Pengling; Ye, Xisheng; Peng, Junsong

2013-01-01

Mode-locking operation of an Er-doped fiber laser with a Tm–Ho co-doped fiber saturable absorber is demonstrated for the first time. Q-switching, Q-switched mode-locking and CW mode-locking operation modes are observed sequentially with increase of the pump power. In the mode-locking operation mode, a repetition rate at the fundamental cavity frequency of 9.05 MHz is obtained with a pulse duration of 46.3 ns. By rotating the polarization controller, a repetition rate up to 887 MHz is achieved, and the pulse duration is shortened to 0.548 ns. (paper)

Performance Comparison of Mode-Locked Erbium-Doped Fiber Laser with Nonlinear Polarization Rotation and Saturable Absorber Approaches

International Nuclear Information System (INIS)

Ismail, M. A.; Tan, S. J.; Shahabuddin, N. S.; Harun, S. W.; Arof, H.; Ahmad, H.

2012-01-01

A mode-locked erbium-doped fiber laser (EDFL) is demonstrated using a highly concentrated erbium-doped fiber (EDF) as the gain medium in a ring configuration with and without a saturable absorber (SA). Without the SA, the proposed laser generates soliton pulses with a repetition rate of 12 MHz, pulse width of 1.11 ps and energy pulse of 1.6 pJ. By incorporating SA in the ring cavity, the optical output of the laser changes from soliton to stretched pulses due to the slight change in the group velocity dispersion. With the SA, a cleaner pulse is obtained with a repetition rate of 11.3 MHz, a pulse width of 0.58 ps and a pulse energy of 2.3 pJ. (fundamental areas of phenomenology(including applications))

Radioactive iodine absorbing properties of tetrathiafulvalene

Energy Technology Data Exchange (ETDEWEB)

Ito, Tomiyasu; Nakamura, Asao (Ajinomoto Co. Inc., Kawasaki, Kanagawa (Japan). Central Research Labs.); Nogawa, Norio; Oohashi, Kunio; Morikawa, Naotake

1989-05-01

For the purpose of searching some effective absorbents of gaseous radioactive iodine, 16 substances considered as having an affinity for iodine were investigated with regular iodine and /sup 125/I. In a preliminary survey, only tetrathiafulvalene (TTF) was found to have satisfactory absorbing properties comparable to activated charcoal. A further detailed comparison of the properties between TTF and activated charcoal led us to the conclusion that the former has more preferable properties as absorbent of radioactive iodine than the latter in all points studied. The results are summarized as follows: (1) The absorption of iodine on TTF in atmosphere was about twice as much as that on activated charcoal. Desorption of iodine from saturatedly absorbed iodine on TTF was practically negligible except trace amount of initial desorption, while that on activated charcoal was considerable (3%/50h) even in the air at room temperature. (2) Absorbed amount of iodine on activated charcoal decreased with increasing gaseous iodine concentration, air flow rate, on humidity of flowing-air. On the other hand, those factors scarcely affected that on TTF. Under an air flow rate of 1m/s, activated charcoal absorbs only 80% of iodine, while TTF absorbs more than 99%. (3) In flowing-air saturated with water vapor, iodine absorbed on activated charcoal was gradually liberated although by small amount (0.08%/100h), while that on TTF was much more stable for a long period (0.004%/100h). As a conclusion, TTF is considered to be useful as a quite effective radioactive iodine absorbent, especially in the case where protection from radioactive iodine should be serious, though it is expensive now. (author).

Radioactive iodine absorbing properties of tetrathiafulvalene

International Nuclear Information System (INIS)

Ito, Tomiyasu; Nakamura, Asao; Nogawa, Norio; Oohashi, Kunio; Morikawa, Naotake.

1989-01-01

For the purpose of searching some effective absorbents of gaseous radioactive iodine, 16 substances considered as having an affinity for iodine were investigated with regular iodine and 125 I. In a preliminary survey, only tetrathiafulvalene (TTF) was found to have satisfactory absorbing properties comparable to activated charcoal. A further detailed comparison of the properties between TTF and activated charcoal led us to the conclusion that the former has more preferable properties as absorbent of radioactive iodine than the latter in all points studied. The results are summarized as follows: (1) The absorption of iodine on TTF in atmosphere was about twice as much as that on activated charcoal. Desorption of iodine from saturatedly absorbed iodine on TTF was practically negligible except trace amount of initial desorption, while that on activated charcoal was considerable (3%/50h) even in the air at room temperature. (2) Absorbed amount of iodine on activated charcoal decreased with increasing gaseous iodine concentration, air flow rate, on humidity of flowing-air. On the other hand, those factors scarcely affected that on TTF. Under an air flow rate of 1m/s, activated charcoal absorbs only 80% of iodine, while TTF absorbs more than 99%. (3) In flowing-air saturated with water vapor, iodine absorbed on activated charcoal was gradually liberated although by small amount (0.08%/100h), while that on TTF was much more stable for a long period (0.004%/100h). As a conclusion, TTF is considered to be useful as a quite effective radioactive iodine absorbent, especially in the case where protection from radioactive iodine should be serious, though it is expensive now. (author)

Tunable continuous wave and passively Q-switched Nd:LuLiF4 laser with monolayer graphene as saturable absorber

International Nuclear Information System (INIS)

Wang, Feng; Luo, Jianjun; Li, Shixia; Li, Tao; Li, Ming

2015-01-01

Tunable continuous wave and passively Q-switched Nd:LuLiF 4 laser performances were demonstrated. Employing a 2 mm thick quartz plate as the birefringence filter, three continuous tuning ranges from 1045.2 to 1049.9 nm, 1051 to 1055.1 nm and 1072.1 to 1074.3 nm could be obtained. Q-switched laser operation was realized by using a monolayer graphene as a saturable absorber. At an incident pump power of 5.94 W, the maximum average output power was 669 mW with the pulse duration of 210 ns and the pulse repetition rate of 145 kHz at T = 10%. (paper)

High-damage-resistant tungsten disulfide saturable absorber mirror for passively Q-switched fiber laser.

Science.gov (United States)

Chen, Hao; Chen, YuShan; Yin, Jinde; Zhang, Xuejun; Guo, Tuan; Yan, Peiguang

2016-07-25

In this paper, we demonstrate a high-damage-resistant tungsten disulfide saturable absorber mirror (WS2-SAM) fabricated by magnetron sputtering technique. The WS2-SAM has an all-fiber-integrated configuration and high-damage-resistant merit because the WS2 layer is protected by gold film so as to avoid being oxidized and destroyed at high pump power. Employing the WS2-SAM in an Erbium-doped fiber laser (EDFL) with linear cavity, the stable Q-switching operation is achieved at central wavelength of 1560 nm, with the repetition rates ranging from 29.5 kHz to 367.8 kHz and the pulse duration ranging from 1.269 μs to 154.9 ns. For the condition of the maximum pump power of 600 mW, the WS2-SAM still works stably with an output power of 25.2 mW, pulse energy of 68.5 nJ, and signal-noise-ratio of 42 dB. The proposed WS2-SAM configuration provides a promising solution for advanced pulsed fiber lasers with the characteristics of high damage resistance, high output energy, and wide tunable frequency.

Metal-semiconductor, composite radiation detectors

International Nuclear Information System (INIS)

Orvis, W.J.; Yee, J.H.; Fuess, D.

1992-12-01

In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with the good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high-efficiency, room temperature gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, the authors have procured and tested a commercial device with operating characteristics similar to those of a single layer of the composite device. They have modeled the radiation transport in a multi-layered device, to verify the initial calculations of layer thickness and composition. They have modeled the electrostatic field in different device designs to locate and remove high-field regions that can cause device breakdown. They have fabricated 14 single layer prototypes

Passively Q-switched mode-locked Nd3+:LuVO4 laser by LT-GaAs saturable absorber

International Nuclear Information System (INIS)

Li, M; Zhao, S; Li, Y; Yang, K; Li, G; Li, D; An, J; Li, T; Yu, Z

2009-01-01

By using LT-GaAs as saturable absorber, we have demonstrated the stable Q-switched and mode-locked (QML) Nd:LuVO 4 laser run in a Z-type folded cavity. Nearly 100% modulation depth of mode locking can be obtained as long as the pump power reaches the oscillation threshold. The repetition rate of the passively Q-switched pulse envelops ranges from 37.5 to 139 kHz as the pump power increased from 1.7 to 8.2 W. The mode-locked pulse inside the Q-switched envelop has an estimated pulse width of about 220 ps and a repetition rate of 111 MHz. Under an incident pump power of 8.2 W, the highest pulse energy of 6 μJ of each Q-switched envelope, and the highest peak power about 2.73 kW of Q-switched mode-locked pulses can be obtained

Review of wide band-gap semiconductors technology

Directory of Open Access Journals (Sweden)

Jin Haiwei

2016-01-01

Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.

Noise and saturation properties of semiconductor quantum dot optical amplifiers

DEFF Research Database (Denmark)

Berg, Tommy Winther; Mørk, Jesper

2002-01-01

We present a detailed theoretical analysis of quantum dot optical amplifiers. Due to the presence of a reservoir of wetting layer states, the saturation and noise properties differ markedly from bulk or QW amplifiers and may be significantly improved.......We present a detailed theoretical analysis of quantum dot optical amplifiers. Due to the presence of a reservoir of wetting layer states, the saturation and noise properties differ markedly from bulk or QW amplifiers and may be significantly improved....

Experimental observation of pulse delay and speed-up in cascaded quantum well gain and absorber media

DEFF Research Database (Denmark)

Hansen, Per Lunnemann; Poel, Mike van der; Yvind, Kresten

2008-01-01

Slow-down and speed-up of 180 fs pulses in semiconductor waveguides beyond the existing models is obseved. Cascaded gain and absorbing sections is shown to provide significant temporal pulse shifting at near constant output pulse energy.......Slow-down and speed-up of 180 fs pulses in semiconductor waveguides beyond the existing models is obseved. Cascaded gain and absorbing sections is shown to provide significant temporal pulse shifting at near constant output pulse energy....

Exciton absorption of entangled photons in semiconductor quantum wells

Science.gov (United States)

Rodriguez, Ferney; Guzman, David; Salazar, Luis; Quiroga, Luis; Condensed Matter Physics Group Team

2013-03-01

The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers. Research funds from Facultad de Ciencias, Universidad de los Andes

MoTe2 saturable absorber for passively Q-switched Ho,Pr:LiLuF4 laser at ∼3 μm

Science.gov (United States)

Yan, Zhengyu; Li, Tao; Zhao, Shengzhi; Yang, Kejian; Li, Dechun; Li, Guiqiu; Zhang, Shuaiyi; Gao, Zijing

2018-03-01

Multilayer molybdenum ditelluride (MoTe2) nanosheets were prepared by liquid-phase exfoliation (LPE) method. A YAG-based MoTe2 saturable absorption (SA) was consequently fabricated. The MoTe2-SA was employed in a passively Q-switched Ho,Pr:LiLuF4 laser at 2.95 μm. Under the absorbed pump power of 3.8 W, an average output power of 90 mW was achieved. The shortest pulse duration of 670 ns was generated with an output power of 73 mW and a repetition rate of 76.46 kHz, corresponding to a pulse energy of 0.95 μJ.

300-MHz-repetition-rate, all-fiber, femtosecond laser mode-locked by planar lightwave circuit-based saturable absorber.

Science.gov (United States)

Kim, Chur; Kim, Dohyun; Cheong, YeonJoon; Kwon, Dohyeon; Choi, Sun Young; Jeong, Hwanseong; Cha, Sang Jun; Lee, Jeong-Woo; Yeom, Dong-Il; Rotermund, Fabian; Kim, Jungwon

2015-10-05

We show the implementation of fiber-pigtailed, evanescent-field-interacting, single-walled carbon nanotube (CNT)-based saturable absorbers (SAs) using standard planar lightwave circuit (PLC) fabrication processes. The implemented PLC-CNT-SA device is employed to realize self-starting, high-repetition-rate, all-fiber ring oscillators at telecommunication wavelength. We demonstrate all-fiber Er ring lasers operating at 303-MHz (soliton regime) and 274-MHz (stretched-pulse regime) repetition-rates. The 303-MHz (274-MHz) laser centered at 1555 nm (1550 nm) provides 7.5 nm (19 nm) spectral bandwidth. After extra-cavity amplilfication, the amplified pulse train of the 303-MHz (274-MHz) laser delivers 209 fs (178 fs) pulses. To our knowledge, this corresponds to the highest repetition-rates achieved for femtosecond lasers employing evanescent-field-interacting SAs. The demonstrated SA fabrication method, which is based on well-established PLC processes, also shows a potential way for mass-producible and lower-cost waveguide-type SA devices suitable for all-fiber and waveguide lasers.

A Filmy Black-Phosphorus Polyimide Saturable Absorber for Q-Switched Operation in an Erbium-Doped Fiber Laser

Directory of Open Access Journals (Sweden)

Tianxian Feng

2016-11-01

Full Text Available We demonstrate an erbium-doped fiber laser passively Q-switched by a black-phosphorus polyimide film. The multi-layer black-phosphorus (BP nanosheets were prepared via a liquid exfoliation approach exploiting N-methylpyrrolidone as the dispersion liquid. By mixing the BP nanosheets with polyimide (PI, a piece of BP–PI film was obtained after evaporating the mixture in a petri dish. The BP–PI saturable absorber had a modulation depth of 0.47% and was inserted into an erbium-doped fiber laser to realize passive Q-switched operations. The repetition rate of the Q-switched laser increased from 5.73 kHz to 31.07 kHz when the laser pump was enhanced from 31.78 mW to 231.46 mW. Our results show that PI is an excellent host material to protect BP from oxidation, and the BP–PI film can act as a promising nonlinear optical device for laser applications.

Quantum-correlated two-photon transitions to excitons in semiconductor quantum wells.

Science.gov (United States)

Salazar, L J; Guzmán, D A; Rodríguez, F J; Quiroga, L

2012-02-13

The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers.

Conductive graphene as passive saturable absorber with high instantaneous peak power and pulse energy in Q-switched regime

Science.gov (United States)

Zuikafly, Siti Nur Fatin; Khalifa, Ali; Ahmad, Fauzan; Shafie, Suhaidi; Harun, SulaimanWadi

2018-06-01

The Q-switched pulse regime is demonstrated by integrating conductive graphene as passive saturable absorber producing relatively high instantaneous peak power and pulse energy. The fabricated conductive graphene is investigated using Raman spectroscopy. The single wavelength Q-switching operates at 1558.28 nm at maximum input pump power of 151.47 mW. As the pump power is increased from threshold power of 51.6 mW to 151.47 mW, the pulse train repetition rate increases proportionally from 47.94 kHz to 67.8 kHz while the pulse width is reduced from 9.58 μs to 6.02 μs. The generated stable pulse produced maximum peak power and pulse energy of 32 mW and 206 nJ, respectively. The first beat node of the measured signal-to-noise ratio is about 62 dB indicating high pulse stability.

Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers

Science.gov (United States)

Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

2017-07-01

We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

Passive harmonic mode-locking of Er-doped fiber laser using CVD-grown few-layer MoS2 as a saturable absorber

International Nuclear Information System (INIS)

Xia Han-Ding; Li He-Ping; Lan Chang-Yong; Li Chun; Deng Guang-Lei; Li Jian-Feng; Liu Yong

2015-01-01

Passive harmonic mode locking of an erbium-doped fiber laser based on few-layer molybdenum disulfide (MoS 2 ) saturable absorber (SA) is demonstrated. The few-layer MoS 2 is prepared by the chemical vapor deposition (CVD) method and then transferred onto the end face of a fiber connector to form a fiber-compatible MoS 2 SA. The 20th harmonic mode-locked pulses at 216-MHz repetition rate are stably generated with a pulse duration of 1.42 ps and side-mode suppression ratio (SMSR) of 36.1 dB. The results confirm that few-layer MoS 2 can serve as an effective SA for mode-locked fiber lasers. (paper)

The simultaneous generation of soliton bunches and Q-switched-like pulses in a partially mode-locked fiber laser with a graphene saturable absorber

Science.gov (United States)

Wang, Zhenhong; Wang, Zhi; Liu, Yan-ge; He, Ruijing; Wang, Guangdou; Yang, Guang; Han, Simeng

2018-05-01

We experimentally report the coexistence of soliton bunches and Q-switched-like pulses in a partially mode-locked fiber laser with a microfiber-based graphene saturable absorber. The soliton bunches, like isolated spikes with extreme amplitude and ultrashort duration, randomly generate in the background of the Q-switched-like pulses. The soliton bunches have some pulse envelopes in which pulses operate at a fundamental repetition rate in the temporal domain. Further investigation shows that the composite pulses are highly correlated with the noise-like pulses. Our work can make a further contribution to enrich the understanding of the nonlinear dynamics in fiber lasers.

Q-switching and mode-locking pulse generation with graphene oxide paper-based saturable absorber

Directory of Open Access Journals (Sweden)

Sulaiman Wadi Harun

2015-06-01

Full Text Available Q-switched and mode-locked erbium-doped fibre lasers (EDFLs are demonstrated by using non-conductive graphene oxide (GO paper as a saturable absorber (SA. A stable and self-starting Q-switched operation was achieved at 1534.4 nm by using a 0.8 m long erbium-doped fibre (EDF as a gain medium. The pulse repetition rate changed from 14.3 to 31.5 kHz, whereas the corresponding pulse width decreased from 32.8 to 13.8 µs as the pump power increased from 22 to 50.5 mW. A narrow spacing dual-wavelength Q-switched EDFL could also be realised by including a photonics crystal fibre and a tunable Bragg filter in the setup. It can operate at a maximum repetition rate of 31 kHz, with a pulse duration of 7.04 µs and pulse energy of 2.8 nJ. Another GOSA was used to realise mode-locked EDFL in a different cavity consisting of a 1.6 m long EDF in conjunction with 1480 nm pumping. The laser generated a soliton pulse train with a repetition rate of 15.62 MHz and pulse width of 870 fs. It is observed that the proposed fibre lasers have a low pulsing threshold pump power as well as a low damage threshold.

Ultrafast pulse amplification in mode-locked vertical external-cavity surface-emitting lasers

Energy Technology Data Exchange (ETDEWEB)

Böttge, C. N., E-mail: boettge@optics.arizona.edu; Hader, J.; Kilen, I.; Moloney, J. V. [College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721 (United States); Koch, S. W. [College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721 (United States); Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg (Germany)

2014-12-29

A fully microscopic many-body Maxwell–semiconductor Bloch model is used to investigate the influence of the non-equilibrium carrier dynamics on the short-pulse amplification in mode-locked semiconductor microlaser systems. The numerical solution of the coupled equations allows for a self-consistent investigation of the light–matter coupling dynamics, the carrier kinetics in the saturable absorber and the multiple-quantum-well gain medium, as well as the modification of the light field through the pulse-induced optical polarization. The influence of the pulse-induced non-equilibrium modifications of the carrier distributions in the gain medium and the saturable absorber on the single-pulse amplification in the laser cavity is identified. It is shown that for the same structure, quantum wells, and gain bandwidth the non-equilibrium carrier dynamics lead to two preferred operation regimes: one with pulses in the (sub-)100 fs-regime and one with multi-picosecond pulses. The recovery time of the saturable absorber determines in which regime the device operates.

Simulation of a silicon neutron detector coated with TiB2 absorber

International Nuclear Information System (INIS)

Krapohl, D; Nilsson, H-E; Petersson, S; Slavicek, T; Thungström, G; Pospisil, S

2012-01-01

Neutron radiation cannot be directly detected in semiconductor detectors and therefore needs converter layers. Planar clean-room processing can be used in the manufacturing process of semiconductor detectors with metal layers to produce a cost-effective device. We used the Geant4 Monte-Carlo toolkit to simulate the performance of a semiconductor neutron detector. A silicon photo-diode was coated with vapour deposited titanium, aluminium thin films and a titaniumdiboride (TiB 2 ) neutron absorber layer. The neutron capture reaction 10B(n, alpha)7Li is taken advantage of to create charged particles that can be counted. Boron-10 has a natural abundance of about SI 19.8%. The emitted alpha particles are absorbed in the underlying silicon detector. We varied the thickness of the converter layer and ran the simulation with a thermal neutron source in order to find the best efficiency of the TiB 2 converter layer and optimize the clean room process.

Transition metal atoms absorbed on MoS2/h-BN heterostructure: stable geometries, band structures and magnetic properties.

Science.gov (United States)

Wu, Yanbing; Huang, Zongyu; Liu, Huating; He, Chaoyu; Xue, Lin; Qi, Xiang; Zhong, Jianxin

2018-06-15

We have studied the stable geometries, band structures and magnetic properties of transition-metal (V, Cr, Mn, Fe, Co and Ni) atoms absorbed on MoS2/h-BN heterostructure systems by first-principles calculations. By comparing the adsorption energies, we find that the adsorbed transition metal (TM) atoms prefer to stay on the top of Mo atoms. The results of the band structure without spin-orbit coupling (SOC) interaction indicate that the Cr-absorbed systems behave in a similar manner to metals, and the Co-absorbed system exhibits a half-metallic state. We also deduce that the V-, Mn-, Fe-absorbed systems are semiconductors with 100% spin polarization at the HOMO level. The Ni-absorbed system is a nonmagnetic semiconductor. In contrast, the Co-absorbed system exhibits metallic state, and the bandgap of V-absorbed system decreases slightly according to the SOC calculations. In addition, the magnetic moments of all the six TM atoms absorbed on the MoS2/h-BN heterostructure systems decrease when compared with those of their free-standing states.

α-particle shielding of semiconductor device

International Nuclear Information System (INIS)

McKeown, P.J.A.; Perry, J.P.; Waddell, J.M.; Barker, K.D.

1981-01-01

Soft errors in semiconductor devices, e.g. random access memories, arising from the bombardment of the device by alpha particles produced by the disintegration of minute traces of uranium or thorium in the packaging materials are prevented by coating the active surface of the semiconductor chip with a thin layer, e.g. 20 to 100 microns of an organic polymeric material, this layer being of sufficient thickness to absorb the particles. Typically, the polymer is a poly-imide formed by u.v. electron-beam or thermal curing of liquid monomer applied to the chip surface. (author)

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

Directory of Open Access Journals (Sweden)

S. Tongay

2012-01-01

Full Text Available Using current-voltage (I-V, capacitance-voltage (C-V, and electric-field-modulated Raman measurements, we report on the unique physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene and conventional semiconductors. When chemical-vapor-deposited graphene is transferred onto n-type Si, GaAs, 4H-SiC, and GaN semiconductor substrates, there is a strong van-der-Waals attraction that is accompanied by charge transfer across the interface and the formation of a rectifying (Schottky barrier. Thermionic-emission theory in conjunction with the Schottky-Mott model within the context of bond-polarization theory provides a surprisingly good description of the electrical properties. Applications can be made to sensors, where in forward bias there is exponential sensitivity to changes in the Schottky-barrier height due to the presence of absorbates on the graphene, and to analog devices, for which Schottky barriers are integral components. Such applications are promising because of graphene’s mechanical stability, its resistance to diffusion, its robustness at high temperatures, and its demonstrated capability to embrace multiple functionalities.

Repetition frequency scaling of an all-polarization maintaining erbium-doped mode-locked fiber laser based on carbon nanotubes saturable absorber

Energy Technology Data Exchange (ETDEWEB)

Sotor, J., E-mail: jaroslaw.sotor@pwr.edu.pl; Sobon, G.; Abramski, K. M. [Laser and Fiber Electronics Group, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Jagiello, J.; Lipinska, L. [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland)

2015-04-07

We demonstrate an all-polarization maintaining (PM), mode-locked erbium (Er)-doped fiber laser based on a carbon nanotubes (CNT) saturable absorber (SA). The laser resonator was maximally simplified by using only one passive hybrid component and a pair of fiber connectors with deposited CNTs. The repetition frequency (F{sub rep}) of such a cost-effective and self-starting mode-locked laser was scaled from 54.3 MHz to 358.6 MHz. The highest F{sub rep} was obtained when the total cavity length was shortened to 57 cm. The laser allows ultrashort pulse generation with the duration ranging from 240 fs to 550 fs. Because the laser components were based on PM fibers the laser was immune to the external perturbations and generated laniary polarized light with the degree of polarization (DOP) of 98.7%.

Carbon dioxide absorber and regeneration assemblies useful for power plant flue gas

Science.gov (United States)

Vimalchand, Pannalal; Liu, Guohai; Peng, Wan Wang

2012-11-06

Disclosed are apparatus and method to treat large amounts of flue gas from a pulverized coal combustion power plant. The flue gas is contacted with solid sorbents to selectively absorb CO.sub.2, which is then released as a nearly pure CO.sub.2 gas stream upon regeneration at higher temperature. The method is capable of handling the necessary sorbent circulation rates of tens of millions of lbs/hr to separate CO.sub.2 from a power plant's flue gas stream. Because pressurizing large amounts of flue gas is cost prohibitive, the method of this invention minimizes the overall pressure drop in the absorption section to less than 25 inches of water column. The internal circulation of sorbent within the absorber assembly in the proposed method not only minimizes temperature increases in the absorber to less than 25.degree. F., but also increases the CO.sub.2 concentration in the sorbent to near saturation levels. Saturating the sorbent with CO.sub.2 in the absorber section minimizes the heat energy needed for sorbent regeneration. The commercial embodiments of the proposed method can be optimized for sorbents with slower or faster absorption kinetics, low or high heat release rates, low or high saturation capacities and slower or faster regeneration kinetics.

Receptor saturation in roentgen films

Energy Technology Data Exchange (ETDEWEB)

Strid, K G; Reichmann, S [Sahlgrenska Sjukhuset, Goeteborg (Sweden)

1980-01-01

Roentgen-film recording of small object details of low attenuation differences (e.g. pulmonary vessels) is regularly seen to be impaired when the film is exposed to yield high values of optical density (D). This high-density failure is due to receptor saturation, which implies that at high exposure values most silver halide grains of the film are made developable, leaving few grains available to receive additional informative photons. The receptor saturation is analysed by means of a mathematical model of a non-screen film yielding Dsub(max) = 2.0. Optimum recording, defined by maximum signal-to-noise ratio in the image, is found at D approximately 0.64, corresponding to, on an average, 1.6 photons absorbed per grain. On the other hand, maximum contrast occurs at D approximately 1.4, where, on the average, 3.6 photons are absorbed per grain. The detective quantum efficiency of the film, i.e. the fraction of the photons actually contributing to the information content of the image, drops from 41 per cent at maximum signal-to-noise ratio to a mere 10 per cent at maximum contrast.

Passive Q-switching of femtosecond-laser-written Tm:KLu(WO4)2 waveguide lasers by graphene and MoS2 saturable absorbers

Science.gov (United States)

Kifle, Esrom; Mateos, Xavier; Vázquez de Aldana, Javier Rodríguez; Ródenas, Airan; Loiko, Pavel; Zakharov, Viktor; Veniaminov, Andrey; Yu, Haohai; Zhang, Huaijin; Chen, Yanxue; Aguiló, Magdalena; Díaz, Francesc; Griebner, Uwe; Petrov, Valentin

2018-02-01

A buried depressed-index channel waveguide with a circular cladding and a core diameter of 40 μm is fabricated in a bulk monoclinic 3 at.% Tm:KLu(WO4)2 crystal by femtosecond direct laser writing. In the continuous-wave regime, the Tm waveguide laser generates 210 mW at 1849.6 nm with a slope efficiency η of 40.8%. Passively Q-switched operation is achieved by inserting transmission-type 2D saturable absorbers (SAs) based on few-layer graphene and MoS2. Using the graphene-SA, a maximum average output power of 25 mW is generated at 1844.8 nm. The pulse characteristics (duration/energy) are 88 ns/18 nJ at a repetition rate of 1.39 MHz.

Theory for passive mode-locking in semiconductor laser structures including the effects of self-phase modulation, dispersion and pulse collisions

NARCIS (Netherlands)

Koumans, R.G.M.P.; Roijen, van R.

1996-01-01

We present a theory for passive mode-locking in semiconductor laser structures using a semiconductor laser amplifier and absorber. The mode-locking system is described in terms of the different elements in the semiconductor laser structure. We derive mode-locking conditions and show how other

Key techniques for space-based solar pumped semiconductor lasers

Science.gov (United States)

He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

2014-12-01

In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

Magnetic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Bihler, Christoph

2009-04-15

In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

Saturation and oscillation of current in semiconductors subjected to uniaxial deformation

International Nuclear Information System (INIS)

Zdebskii, A.P.; Olikh, Yu.A.; Savchuk, A.U.

1985-01-01

The influence of an external uniaxial deformation on the saturation and oscillations of current in photosensitive CdS monocrystals is investigated. The specimens were subjected to uniaxial pressure up to 6 x 10 7 N/m 2 , the pressure being either parallel or perpendicular to the c axis in CdS. With application of external pressure, the shape of current oscillations and their amplitude changed. In the case where the pressure was perpendicular to the direction of current I, the amplitude of oscillations and the saturation depth of the volt-ampere characteristic, VAC, were increased. With pressure being parallel to the current direction, the reverse phenomenon was observed, i.e. the efficiency of the acousto-electronic interaction was reduced

Caractérisation expérimentale et modélisation numérique des propriétés spectroscopiques d'absorbants saturables pour le déclenchement passif de laser verre erbium

Science.gov (United States)

Girard, S.; Shcherbitsky, V.; Fromager, M.; Aït Ameur, K.; Moncorgé, R.; Ferrand, B.; Montagne, J.

2002-06-01

Une comparaison entre différents absorbants saturables (LMA, MALO, ZnS et ZnSe dopés Col^+ et ZnSe dopé Cr^{2+}) utilisables comme interrupteur optique passif pour déclencher les sources lasers verre erbium à 1.53 μm est présentée. Des expériences de saturation en simple passage sont interprétées en tenant compte de la distribution spatiale et temporelle du laser de pompe. Cette technique permet d'obtenir des sections efficaces de saturation effectives fiables et indépendantes des conditions de mesure sans introduire artificiellement d'absorption dans l'état excité qui, en principe, n'existe pas dans ce type de système contrairement aux études effectuées jusqu'ici sur ces matériaux.

Saturation spectroscopy of an optically opaque argon plasma

Science.gov (United States)

Eshel, Ben; Rice, Christopher A.; Perram, Glen P.

2018-02-01

A pure argon (Ar) plasma formed by a capacitively coupled radio-frequency discharge was analyzed using Doppler-free saturation spectroscopy. The expected line shape was a characteristic of sub-Doppler spectra in the presence of velocity-changing collisions, a narrow Lorentzian centered on a Doppler pedestal, but the observed line shapes contain a multi-peak structure, attributed to opacity of the medium. Laser absorption and inter-modulated fluorescence spectroscopy measurements were made to validate opacity as a driving factor of the observed line shapes. Spectral line shapes are further complicated by the spatial dependence of the pump laser, probe laser and of the absorbing medium, as well as the large absorbance of the transition under investigation. A numerical line shape was derived by accounting for the spatial variation of the pump and probe with a saturated line shape obtained from the rate equations for an equivalent two-level system. This simulated line shape shows good qualitative agreement with the trends observed in the data.

Neutron absorbed dose in a pacemaker CMOS

International Nuclear Information System (INIS)

Borja H, C. G.; Guzman G, K. A.; Valero L, C.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R.; Paredes G, L.

2012-01-01

The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor (CMOS), has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1.522 x 10 -17 Gy per neutron emitted by the source. (Author)

Neutron absorbed dose in a pacemaker CMOS

Energy Technology Data Exchange (ETDEWEB)

Borja H, C. G.; Guzman G, K. A.; Valero L, C.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: fermineutron@yahoo.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

2012-06-15

The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor (CMOS), has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1.522 x 10{sup -17} Gy per neutron emitted by the source. (Author)

Nonlinear absorbing cationic iridium(III) complexes bearing benzothiazolylfluorene motif on the bipyridine (N∧N) ligand: synthesis, photophysics and reverse saturable absorption.

Science.gov (United States)

Li, Yuhao; Dandu, Naveen; Liu, Rui; Hu, Lei; Kilina, Svetlana; Sun, Wenfang

2013-07-24

reverse saturable absorbers at 532 nm and could potentially be used as broadband nonlinear absorbing materials.

Mode-locked ytterbium fiber lasers using a large modulation depth carbon nanotube saturable absorber without an additional spectral filter

International Nuclear Information System (INIS)

Pan, Y Z; Miao, J G; Liu, W J; Huang, X J; Wang, Y B

2014-01-01

We demonstrate an all-normal-dispersion ytterbium (Yb)-doped fiber laser mode-locked by a higher modulation depth carbon nanotube saturable absorber (CNT-SA) based on an evanescent field interaction scheme. The laser cavity consists of pure normal dispersion fibers without dispersion compensation and an additional spectral filter. It is exhibited that the higher modulation depth CNT-SA could contribute to stabilize the mode-locking operation within a limited range of pump power and generate the highly chirped pulses with a high-energy level in the cavity with large normal dispersion and strong nonlinearity. Stable mode-locked pulses with a maximal energy of 29 nJ with a 5.59 MHz repetition rate at the operating wavelength around 1085 nm have been obtained. The maximal time-bandwidth product is 262.4. The temporal and spectral characteristics of pulses versus pump power are demonstrated. The experimental results suggest that the CNT-SA provides a sufficient nonlinear loss to compensate high nonlinearity and catch up the gain at a different pump power and thus leads to the stable mode locking. (letter)

Tunable Q-switched erbium doped fiber laser based on metal transition oxide saturable absorber and refractive index characteristic of multimode interference effects

Science.gov (United States)

Mohammed, D. Z.; Khaleel, Wurood Abdulkhaleq; Al-Janabi, A. H.

2017-12-01

Ferro-oxide (Fe3O4) nanoparticles were used as a saturable absorber (SA) for a passively Q-switched erbium doped fiber laser (EDFL) with ring cavity. The Q-switching operation was achieved at a pump threshold of 80 mW. The proposed fiber laser produces stable pulses train of repetition rate ranging from 25 kHz to 80 kHz as the pump power increases from threshold to 342 mW. The minimum recorded pulse width was 2.7 μs at 342 mW. The C-band tunability operation was performed using single mode-multimode-single mode fiber (SM-MM-SM) structure. The laser exhibited a total tuning range of 7 nm, maximum sensitivity of 106.9 nm, optical signal to noise ratio (OSNR) of 38 dB and 3-dB linewidth of 0.06 nm.

Femtosecond all-polarization-maintaining fiber laser operating at 1028 nm

DEFF Research Database (Denmark)

Olsson, R.K.; Andersen, T.V.; Leick, Lasse

2008-01-01

We present an effective solution for an all-polarization-maintaining modelocked femtosecond fiber laser operating at the central wavelength of 1028 nm. The laser is based on an Yb-doped active fiber. Modelocking is enabled by a semiconductor saturable absorber mirror, and the central wavelength i...... is enforced by a fiber Bragg grating. The laser is self-starting and demonstrates excellent stability gainst Q-switching. Pulse energies reach 13 nJ at 34 MHz repetition rate. External compression leads to near transform-limited pulses of 140 fs.......We present an effective solution for an all-polarization-maintaining modelocked femtosecond fiber laser operating at the central wavelength of 1028 nm. The laser is based on an Yb-doped active fiber. Modelocking is enabled by a semiconductor saturable absorber mirror, and the central wavelength...

Generation of “gigantic” ultra-short microwave pulses based on passive mode-locking effect in electron oscillators with saturable absorber in the feedback loop

International Nuclear Information System (INIS)

Ginzburg, N. S.; Denisov, G. G.; Vilkov, M. N.; Zotova, I. V.; Sergeev, A. S.

2016-01-01

A periodic train of powerful ultrashort microwave pulses can be generated in electron oscillators with a non-linear saturable absorber installed in the feedback loop. This method of pulse formation resembles the passive mode-locking widely used in laser physics. Nevertheless, there is a specific feature in the mechanism of pulse amplification when consecutive energy extraction from different fractions of a stationary electron beam takes place due to pulse slippage over the beam caused by the difference between the wave group velocity and the electron axial velocity. As a result, the peak power of generated “gigantic” pulses can exceed not only the level of steady-state generation but also, in the optimal case, the power of the driving electron beam.

Attractive electron correlation in wide band gap semiconductors by electron-photon interaction

International Nuclear Information System (INIS)

Takeda, Hiroyuki; Yoshino, Katsumi

2004-01-01

We theoretically demonstrate attractive electron correlation in wide band gap semiconductors by electron-photon interaction. At low temperature, wavevectors of electromagnetic waves absorbed in wide band gap semiconductors cannot be neglected for wavevectors of electron waves; that is, electromagnetic waves affect the movements of electrons. In particular, attractive interaction occurs between two electrons when one electron changes from a valence band to a conduction band and the other electron changes from a conduction band to a valence band

InP/InGaP quantum-dot SESAM mode-locked Alexandrite laser

Science.gov (United States)

Ghanbari, Shirin; Fedorova, Ksenia A.; Krysa, Andrey B.; Rafailov, Edik U.; Major, Arkady

2018-02-01

A semiconductor saturable absorber mirror (SESAM) passively mode-locked Alexandrite laser was demonstrated. Using an InP/InGaP quantum-dot saturable absorber mirror, pulse duration of 420 fs at 774 nm was obtained. The laser was pumped at 532 nm and generated 325 mW of average output power in mode-locked regime with a pump power of 7.12 W. To the best of our knowledge, this is the first report of a passively mode-locked Alexandrite laser using SESAM in general and quantum-dot SESAM in particular.

Simulation and Performance Test Technology Development for Semiconductor Radiation Detection Instrument Fabrication

International Nuclear Information System (INIS)

Kim, Jong Kyung; Lee, W. G.; Kim, S. Y.; Shin, C. H.; Kim, K. O.; Park, J. M.; Jang, D. Y.; Kang, J. S.

2010-06-01

- Analysis on the Absorbed Dose and Electron Generation by Using MCNPX Code - Analysis on the Change of Measured Energy Spectrum As a Function of Bias Voltage Applied in Semiconductor Detector - Comparison of Monte Carlo Simulation Considering the Charge Collection Efficiency and Experimental Result - Development of Semiconductor Sensor Design Code Based on the Graphic User Interface - Analysis on Depth Profile of Ion-implanted Semiconductor Wafer Surface and Naturally Generated SiO2 Insulation Layer Using Auger Electron Spectroscopy - Measurement of AFM Images and Roughness to Abalyze Surface of Semiconductor Wafer with respect to Annealing and Cleaning Process - Measurement of Physical Properties for Semiconductor Detector Surface after CZT Passivation Process - Evaluation of Crystal Structure and Specific Resistance of CZT - Measurement/Analysis on Band Structure of CZT Crystal - Evaluation of Neutron Convertor Layer with respect to Change in Temperature - Measurement/Evaluation of physical characteristics for lattice parameter, specific resistance, and band structure of CZT crystal - Measurement/Evaluation of lattice transition of SiC semiconductor detector after radiation irradiation - Measurement/Evaluation of performance of semiconductor detector with respect to exposure in high temperature environment

Characterization of saturation of CR-39 detector at high alpha-particle fluence

Directory of Open Access Journals (Sweden)

M. El Ghazaly

2018-04-01

Full Text Available The occurrence of saturation in the CR-39 detector reduces and limits its detection dynamic range; nevertheless, this range could be extended using spectroscopic techniques and by measuring the net bulk rate of the saturated CR-39 detector surface. CR-39 detectors were irradiated by 1.5 MeV high alpha-particle fluence varying from 0.06 × 108 to 7.36 × 108 alphas/cm2 from Am-241 source; thereafter, they were etched in a 6.25N NaOH solution at a temperature of 70°C for different durations. Net bulk etch rate measurement of the 1.5 MeV alpha-irradiated CR-39 detector surface revealed that rate increases with increasing etching time and reaches its maximum value at the end of the alpha-particle range. It is also correlated with the alpha-particle fluence. The measurements of UV–Visible (UV–Vis absorbance at 500 and 600 nm reveal that the absorbance is linearly correlated with the fluence of alpha particles at the etching times of 2 and 4 hour. For extended etching times of 6, 10, and 14.5 hour, the absorbance is saturated for fluence values of 4.05 × 108, 5.30 × 108, and 7.36 × 108 alphas/cm2. These new methods pave the way to extend the dynamic range of polymer-based solid state nuclear track detectors (SSNTDs in measurement of high fluence of heavy ions as well as in radiation dosimetry. Keywords: Alpha Particle, Bulk Etch Rate, CR-39 Detector, Saturated Regime, UV–Vis Spectroscopy

Saturable Absorption and Modulation Characteristics of Laser with Graphene Oxide Spin Coated on ITO Substrate

Directory of Open Access Journals (Sweden)

Xin Li

2014-01-01

Full Text Available The graphene oxide (GO thin film has been obtained by mixture of GO spin coated on substrate of indium tin oxide (ITO. The experiment has shown that continuous-wave laser is modulated when the graphene oxide saturable absorber (GO-SA is employed in the 1064 nm laser cavity. The shortest pulse width is 108 ns at the pump power of 5.04 W. Other output laser characteristics, such as the threshold pump power, the repetition rate, and the peak power, have also been measured. The results have demonstrated that graphene oxide is an available saturable absorber for 1064 nm passive Q-switching laser.

Metal-core/semiconductor-shell nanocones for broadband solar absorption enhancement.

Science.gov (United States)

Zhou, Lin; Yu, Xiaoqiang; Zhu, Jia

2014-02-12

Nanostructure-based photovoltaic devices have exhibited several advantages, such as reduced reflection, extraordinary light trapping, and so forth. In particular, semiconductor nanostructures provide optical modes that have strong dependence on the size and geometry. Metallic nanostructures also attract a lot of attention because of the appealing plasmonic effect on the near-field enhancement. In this study, we propose a novel design, the metal-core/semiconductor-shell nanocones with the core radius varying in a linearly gradient style. With a thin layer of semiconductor absorber coated on a metallic cone, such a design can lead to significant and broadband absorption enhancement across the entire visible and near-infrared solar spectrum. As an example of demonstration, a layer of 16 nm thick crystalline silicon (c-Si) coated on a silver nanocone can absorb 27% of standard solar radiation across a broad spectral range of 300-1100 nm, which is equivalent to a 700 nm thick flat c-Si film. Therefore, the absorption enhancement factor approaching the Yablonovitch limit is achieved with this design. The significant absorption enhancement can be ascribed to three types of optical modes, that is, Fabry-Perot modes, plasmonic modes, and hybrid modes that combine the features of the previous two. In addition, the unique nanocone geometry enables the linearly gradient radius of the semiconductor shell, which can support multiple optical resonances, critical for the broadband absorption. Our design may find general usage as elements for the low cost, high efficiency solar conversion and water-splitting devices.

Passive Q-switching in CW-CO2 laser with SF6 as an intracavity saturable absorber

International Nuclear Information System (INIS)

Al-Hawat, Sh.

2007-10-01

A passive Q-switching was applied to a tunable CW CO 2 laser with output power about 3.5 W using SF 6 as a saturable absorber inside the cavity. The Q-Switching phenomenon was studied ( pulse shape, pulse duration, repetition rate and conditions of its generation ) at the spectral lines of 10P(10), 10P(26), 10P(28) and 10P(30) from the branch of 10P of CO 2 laser. These lines had a weak absorption in relation to other lines of this branch, under SF 6 pressure till 0.5 mbar. To control the behaviour of such phenomenon, the gases He and Xe were added separately to SF 6 . It was observed that the Q-switching phenomenon was depended on the added gas pressure of Xe and He, through the repetitive rate of pulses , duration and energy of generated laser pulse. A computational program was written to calculate the Q-switching pulses parameters under similar conditions as those applied in the case of SF 6 +He mixture. A comparison was made with the experimental data , not so big discrepancies were observed between them. In addition to that, absorption coefficients of SF 6 were determined in two cases: the first one when the absorption cell was located outside the laser cavity, and the second one when the cell was located inside the cavity. On the basis of obtained coefficients the absorption cross sections of SF 6 were found and compared with NIST database.(author)

Nonlinear propagation of strong-field THz pulses in doped semiconductors

DEFF Research Database (Denmark)

Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

2012-01-01

We report on nonlinear propagation of single-cycle THz pulses with peak electric fields reaching 300 kV/cm in n-type semiconductors at room temperature. Dramatic THz saturable absorption effects are observed in GaAs, GaP, and Ge, which are caused by the nonlinear electron transport in THz fields....... The semiconductor conductivity, and hence the THz absorption, is modulated due to the acceleration of carriers in strong THz fields, leading to an increase of the effective mass of the electron population, as the electrons are redistributed from the low-momentum, low-effective-mass states to the high-momentum, high...

Steep and Adjustable Transfer Functions of Monolithic SOA-EA 2R-Regenerators

DEFF Research Database (Denmark)

Öhman, Filip; Kjær, Rasmus; Christiansen, Lotte Jin

2006-01-01

of a semiconductor waveguide with alternating amplifier and absorber sections using quantum-well active material. The steep nonlinearity of the transfer function is achieved by concatenating several sections. We identify the saturation properties of the absorbing media, as dictated by the band-filling and field......Measurements and numerical modeling of a reamplification and reshaping (2R) regenerator demonstrate a steep power transfer function with adjustable threshold. The threshold can be adjusted more than 6 dB by simple control of the reverse bias voltage of the absorber section. The device consists...... screening, as important for the observed transfer functions. The relation of the saturation powers of the gain and absorption sectionsis important for design optimization....

Coexistence effect of UVA absorbers to increase their solubility and stability of supersaturation.

Science.gov (United States)

Endo, M; Mukawa, T; Sato, N; Maezawa, D; Ohtsu, Y; Kuroda, A; Wakabayashi, M; Asakura, K

2014-12-01

Sunscreens containing UVA absorbers in high concentrations are expected to be developed, since recent studies have suggested the possibility of involvement of UVA ray in skin cancer and early skin aging. Solubility and stability of supersaturation of UVA absorbers in UVB absorber were determined in the absence and the presence of cosmetic oil. Coexistence effect of UVA absorbers was analyzed to dissolve them in high concentrations. Two UVA absorbers, diethylamino hydroxybenzoyl hexyl benzoate (DHHB) and butyl methoxydibenzoylmethane (BMDM), a UVB absorber, 2-ethylhexyl methoxycinnamate (EHMC), and a cosmetic oil, 2-ethylhexyl ester of oligomer of hydroxystearic acid (EH-O-HSA), were used. Their solutions were prepared at 80°C and cooled to 5°C. The solid DHHB and/or BMDM were added to it, and the time evolution of concentrations of the UVA absorbers in the solution phase was monitored. At the saturation in the absence of EH-O-HSA at 5°C, weight ratio of DHHB and BMDM to EHMC was 0.39/1.00 and 0.22/1.00, respectively. Addition of EH-O-HSA slightly changed the solubility of DHHB and BMDM. When the weight ratio of EH-O-HSA to EHMC was 0.20/1.00, weight ratio of DHHB and BMDM to EHMC was 0.35/1.00 and 0.25/1.00, respectively at the saturation at 5°C. In the presence of EH-O-HSA, a strong coexistence effect of DHHB and BMDM was found on their solubility. A thermodynamically stable saturated solution at 5°C having the composition that DHHB: BMDM: EHMC: EH-O-HSA = 0.47: 0.46: 1.00: 0.20 was obtained by the simultaneous addition of solid DHHB and BMDM into the initial solution. The solution type composite having the highest concentrations of DHHB and BMDM prepared in this study exhibited critical wavelength at 368 nm that was just below the border for sunscreens being qualified as 'Broad Spectrum' protection under the new rule launched by US FDA. © 2014 Society of Cosmetic Scientists and the Société Française de Cosmétologie.

Influence of backscattering on the spatial resolution of semiconductor X-ray detectors

International Nuclear Information System (INIS)

Hoheisel, M.; Korn, A.; Giersch, J.

2005-01-01

Pixelated X-ray detectors using semiconductor layers or scintillators as absorbers are widely used in high-energy physics, medical diagnosis, or non-destructive testing. Their good spatial resolution performance makes them particularly suitable for applications where fine details have to be resolved. Intrinsic limitations of the spatial resolution have been studied in previous simulations. These simulations focused on interactions inside the conversion layer. Transmitted photons were treated as a loss. In this work, we also implemented the structure behind the conversion layer to investigate the impact of backscattering inside the detector setup. We performed Monte Carlo simulations with the program ROSI (Roentgen Simulation) which is based on the well-established EGS4 algorithm. Line-spread functions of different fully implemented detectors were simulated. In order to characterize the detectors' spatial resolution, the modulation transfer functions (MTF) were calculated. The additional broadening of the line-spread function by carrier transport has been ignored in this work. We investigated two different detector types: a directly absorbing pixel detector where a semiconductor slab is bump-bonded to a readout ASIC such as the Medipix-2 setup with Si or GaAs as an absorbing semiconductor layer, and flat-panel detectors with a Se or a CsI converter. We found a significant degradation of the MTF compared to the case without backscattering. At energies above the K-edge of the backscattering material the spatial resolution drops and can account for the observed low-frequency drop of the MTF. Ignoring this backscatter effect might lead to misinterpretations of the charge sharing effect in counting pixel detectors

High-field Faraday rotation in II-VI-based semimagnetic semiconductors

NARCIS (Netherlands)

Savchuk, AI; Fediv, [No Value; Nikitin, PI; Perrone, A; Tatzenko, OM; Platonov, VV

The effects of d-d exchange interaction have been studied by measuring high-field Faraday rotation in II-VI-based semimagnetic semiconductors. For Cd1-xMnxTe crystals with x = 0.43 and at room temperature a saturation in magnetic field dependence of the Faraday rotation has been observed. In the

Photovoltaic characterization of Copper-Indium-Gallium Sulfide (CIGS2) solar cells for lower absorber thicknesses

Energy Technology Data Exchange (ETDEWEB)

Vasekar, Parag S., E-mail: psvasekar@yahoo.co [Florida Solar Energy Center, 1679 Clearlake Rd., Cocoa FL, 32922 (United States); Jahagirdar, Anant H.; Dhere, Neelkanth G. [Florida Solar Energy Center, 1679 Clearlake Rd., Cocoa FL, 32922 (United States)

2010-01-31

Chalcopyrites are important contenders among thin-film solar cells due to their direct band gap and higher absorption coefficient. Copper-Indium-Gallium Sulfide (CIGS2) is a chalcopyrite material with a near-optimum band gap of {approx} 1.5 eV. Record efficiency of 11.99% has been achieved on a 2.7 {mu}m CIGS2 film prepared by sulfurization at the Florida Solar Energy Center (FSEC) PV Materials Lab. In this work, photovoltaic performance analysis has been carried out for a 1.5 {mu}m absorber prepared under similar conditions as that of a 2.7 {mu}m thick absorber sample. It was observed that there is an increase in diode factor and reverse saturation current density when the absorber thickness was decreased. The diode factor increased from 1.69 to 2.18 and reverse saturation current density increased from 1.04 x 10{sup -10} mA/cm{sup 2} to 1.78 x 10{sup -8} mA/cm{sup 2}. This can be attributed to a decrease in the grain size when the absorber thickness is decreased. It was also observed that there is an improvement in the shunt resistance. Improvement in shunt resistance can be attributed to optimized value of i:ZnO for lower absorber thickness and less shunting paths due to a smoother absorber.

Photovoltaic characterization of Copper-Indium-Gallium Sulfide (CIGS2) solar cells for lower absorber thicknesses

International Nuclear Information System (INIS)

Vasekar, Parag S.; Jahagirdar, Anant H.; Dhere, Neelkanth G.

2010-01-01

Chalcopyrites are important contenders among thin-film solar cells due to their direct band gap and higher absorption coefficient. Copper-Indium-Gallium Sulfide (CIGS2) is a chalcopyrite material with a near-optimum band gap of ∼ 1.5 eV. Record efficiency of 11.99% has been achieved on a 2.7 μm CIGS2 film prepared by sulfurization at the Florida Solar Energy Center (FSEC) PV Materials Lab. In this work, photovoltaic performance analysis has been carried out for a 1.5 μm absorber prepared under similar conditions as that of a 2.7 μm thick absorber sample. It was observed that there is an increase in diode factor and reverse saturation current density when the absorber thickness was decreased. The diode factor increased from 1.69 to 2.18 and reverse saturation current density increased from 1.04 x 10 -10 mA/cm 2 to 1.78 x 10 -8 mA/cm 2 . This can be attributed to a decrease in the grain size when the absorber thickness is decreased. It was also observed that there is an improvement in the shunt resistance. Improvement in shunt resistance can be attributed to optimized value of i:ZnO for lower absorber thickness and less shunting paths due to a smoother absorber.

Dynamics of InGaN tandem blue-violet semiconductor lasers

International Nuclear Information System (INIS)

Antohi, I.; Rusu, S.S.; Tronciu, V.Z.

2013-01-01

Full text: Blue-violet semiconductor lasers have received much attention because of their promise for high-density optical storage applications. In particular, blue-violet laser diodes operating at 400 nm are required for BD- systems and for use in medicine, biology, color printers and monitors, etc, In recent years, numerous fabrication methods have been proposed and developed for blue lasers with CW and self-pulsating operations and the lifetime of such lasers has been increased to over 15000 h. Recently, we have reported self-pulsation and excitable behaviour for an InGaN laser with a p-type saturable absorber, and SP in the frequency range from 1.6 to 2.9 GHz has been achieved with such lasers. In this paper, we present an investigation of the dynamics of tandem 400 nm blue-violet lasers with setup presented in Fig.1a. A particular feature of the devices is the connection of the contacts of the SA, to reduce the carrier lifetime in the SA with the intention of producing self-pulsation and excitability. We examine the laser dynamics in terms of bifurcation diagrams. A typical calculation of bifurcation for the periodic solution is shown in Fig. 1b. This figure shows the dependence of the peak of the photon number on the injected.

Effect of transferrin saturation on internal iron exchange

International Nuclear Information System (INIS)

Bergamaschi, G.; Eng, M.J.; Huebers, H.A.; Finch, C.A.

1986-01-01

Radioiron was introduced into the intestinal lumen to evaluate absorption, injected as nonviable red cells to evaluate reticuloendothelial (RE) processing of iron, and injected as hemoglobin to evaluate hepatocyte iron processing. Redistribution of iron through the plasma was evaluated in control animals and animals whose transferrin was saturated by iron infusion. Radioiron introduced into the lumen of the gut as ferrous sulfate and as transferrin-bound iron was absorbed about half as well in iron-infused animals, and absorbed iron was localized in the liver. The similar absorption of transferrin-bound iron suggested that absorption of ferrous iron occurred via the mucosal cell and did not enter by diffusion. The decrease in absorption was associated with an increase in mucosal iron and ferritin content produced by the iron infusion. An inverse relationship (r = -0.895) was shown between mucosal ferritin iron and absorption. When iron was injected as nonviable red cells, it was deposited predominantly in reticuloendothelial cells of the spleen. Return of this radioiron to the plasma was only 6% of that in control animals. While there was some movement of iron from spleen to liver, this could be accounted for by intravascular hemolysis. Injected hemoglobin tagged with radioiron was for the most part taken up and held by the liver. Some 13% initially localized in the marrow in iron-infused animals was shown to be storage iron unavailable for hemoglobin synthesis. These studies demonstrate the hepatic trapping of absorbed iron and the inability of either RE cell or hepatocyte to release iron in the transferrin-saturated animal

Photoreduction of carbon dioxide and water into formaldehyde and methanol on semiconductor materials

Energy Technology Data Exchange (ETDEWEB)

Aurian-Blajeni, B; Halmann, M; Manassen, J

1980-01-01

Heterogeneous photoassisted reduction of aqueous carbon dioxide was achieved using semiconductor powders, with either high-pressure Hg-lamps or sunlight as energy sources. The products were methanol, formaldehyde and methane. The reaction was carried out either as a gas-solid process, by passing carbon dioxide and water vapor over illuminated semiconductor surfaces, or as a liquid-solid reaction, by illuminating aqueous suspensions of semiconductor powders through which carbon dioxide was bubbled. Best results, under illumination by Hg-lamps, were obtained with aqueous suspensions of strontium titanate, SrTiO3, tungsten oxide, WO3, and titanium oxide, TiO2, resulting in absorbed energy conversion efficiencies of 6, 5.9 and 1.2 per cent, respectively.

A theory of coherent propagation of light wave in semiconductors

International Nuclear Information System (INIS)

Zi-zhao, G.; Guo-zhen, Y.

1980-05-01

In this paper, we suggest a theory to describe the pheonmena of coherent propagation of light wave in semiconductors. Basing on two band system and considering the interband and intraband transitions induced by light wave and the interaction between electrons, we obtain the nonlinear equations for the description of interaction between carriers and coherent light wave. We have made use of the equations to analyse the phenomena which arise from the interaction between semiconductors and coherent light, for example, the multiphoton transitions, the saturation of light absorption of exciton, the shift of exciton line in intense light field, and the coherent propagation phenomena such as self-induced transparency, etc. (author)

MCNPX calculations for electron irradiated semiconductor detectors

International Nuclear Information System (INIS)

Sedlackova, K.; Necas, V.; Sagatova, A.; Zatko, B.

2014-01-01

This study aimed to treat some practical problems of (not only) semiconductor material irradiation by high energy electron beam using MCNPX simulation code. The relation between the absorbed dose and the fluency was found and the energy distribution of electron flux density was simulated on the top and back side of 270 μm thick GaAs, SiC and Si detectors. Furthermore, the dose depth profiles were calculated for GaAs, SiC and Si materials irradiated by 4 and 5 MeV electron beams. For the GaAs detector, a very good agreement with the experiment was shown. To match the absolute values of the absorbed dose with experimentally obtained values, the electron source emissivity has to be determined in relation to the electron beam setting parameters. (authors)

Quantitative impact of small angle forward scatter on whole blood oximetry using a Beer-Lambert absorbance model.

Science.gov (United States)

LeBlanc, Serge Emile; Atanya, Monica; Burns, Kevin; Munger, Rejean

2011-04-21

It is well known that red blood cell scattering has an impact on whole blood oximetry as well as in vivo retinal oxygen saturation measurements. The goal of this study was to quantify the impact of small angle forward scatter on whole blood oximetry for scattering angles found in retinal oximetry light paths. Transmittance spectra of whole blood were measured in two different experimental setups: one that included small angle scatter in the transmitted signal and one that measured the transmitted signal only, at absorbance path lengths of 25, 50, 100, 250 and 500 µm. Oxygen saturation was determined by multiple linear regression in the 520-600 nm wavelength range and compared between path lengths and experimental setups. Mean calculated oxygen saturation differences between setups were greater than 10% at every absorbance path length. The deviations to the Beer-Lambert absorbance model had different spectral dependences between experimental setups, with the highest deviations found in the 520-540 nm range when scatter was added to the transmitted signal. These results are consistent with other models of forward scatter that predict different spectral dependences of the red blood cell scattering cross-section and haemoglobin extinction coefficients in this wavelength range.

Dynamics of temporally localized states in passively mode-locked semiconductor lasers

Science.gov (United States)

Schelte, C.; Javaloyes, J.; Gurevich, S. V.

2018-05-01

We study the emergence and the stability of temporally localized structures in the output of a semiconductor laser passively mode locked by a saturable absorber in the long-cavity regime. For large yet realistic values of the linewidth enhancement factor, we disclose the existence of secondary dynamical instabilities where the pulses develop regular and subsequent irregular temporal oscillations. By a detailed bifurcation analysis we show that additional solution branches that consist of multipulse (molecules) solutions exist. We demonstrate that the various solution curves for the single and multipeak pulses can splice and intersect each other via transcritical bifurcations, leading to a complex web of solutions. Our analysis is based on a generic model of mode locking that consists of a time-delayed dynamical system, but also on a much more numerically efficient, yet approximate, partial differential equation. We compare the results of the bifurcation analysis of both models in order to assess up to which point the two approaches are equivalent. We conclude our analysis by the study of the influence of group velocity dispersion, which is only possible in the framework of the partial differential equation model, and we show that it may have a profound impact on the dynamics of the localized states.

Reduction of interferometric crosstalk induced penalty using a saturated semiconductor optical amplifier

DEFF Research Database (Denmark)

Liu, Fenghai; Zheng, Xueyan; Poulsen, Henrik Nørskov

2000-01-01

We successfully demonstrated that a simple saturated SOA could be used to reduce the impact from the interferometric crosstalk at 2.5 and 10 Gb/s. It is shown that 4 dB more crosstalk power can be tolerated at 1 dB penalty by using the SOA. This will greatly reduce the crosstalk requirement...

Patterning via optical saturable transitions

Science.gov (United States)

Cantu, Precious

For the past 40 years, optical lithography has been the patterning workhorse for the semiconductor industry. However, as integrated circuits have become more and more complex, and as device geometries shrink, more innovative methods are required to meet these needs. In the far-field, the smallest feature that can be generated with light is limited to approximately half the wavelength. This, so called far-field diffraction limit or the Abbe limit (after Prof. Ernst Abbe who first recognized this), effectively prevents the use of long-wavelength photons >300nm from patterning nanostructures barrier is developed and experimentally verified. This approach, which I refer to as Patterning via Optical Saturable Transitions (POST) has the potential for massive parallelism, enabling the creation of nanostructures and devices at a speed far surpassing what is currently possible with conventional optical lithographic techniques. The fundamental understanding of this technique goes beyond optical lithography in the semiconductor industry and is applicable to any area that requires the rapid patterning of large-area two or three-dimensional complex geometries. At a basic level, this research intertwines the fields of electrochemistry, material science, electrical engineering, optics, physics, and mechanical engineering with the goal of developing a novel super-resolution lithographic technique.

Semiconductor

International Nuclear Information System (INIS)

2000-01-01

This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

A highly efficient graphene oxide absorber for Q-switched Nd:GdVO4 lasers

International Nuclear Information System (INIS)

Wang Yonggang; Wen Xiaoming; Tang Jau; Chen, Hou Ren; Hsieh, Wen Feng

2011-01-01

We demonstrated that graphene oxide material could be used as a highly efficient saturable absorber for the Q-switched Nd:GdVO 4 laser. A novel and low-cost graphene oxide (GO) absorber was fabricated by a vertical evaporation technique and high viscosity of polyvinyl alcohol (PVA) aqueous solution. A piece of GO/PVA absorber, a piece of round quartz, and an output coupler mirror were combined to be a sandwich structure passive component. Using such a structure, 104 ns pulses and 1.22 W average output power were obtained with the maximum pulse energy at 2 µJ and a slope efficiency of 17%.

Charging and exciton-mediated decharging of metal nanoparticles in organic semiconductor matrices

International Nuclear Information System (INIS)

Ligorio, Giovanni; Vittorio Nardi, Marco; Christodoulou, Christos; Florea, Ileana; Ersen, Ovidiu; Monteiro, Nicolas-Crespo; Brinkmann, Martin; Koch, Norbert

2014-01-01

Gold nanoparticles (Au-NPs) were deposited on the surface of n- and p-type organic semiconductors to form defined model systems for charge storage based electrically addressable memory elements. We used ultraviolet photoelectron spectroscopy to study the electronic properties and found that the Au-NPs become positively charged because of photoelectron emission, evidenced by spectral shifts to higher binding energy. Upon illumination with light that can be absorbed by the organic semiconductors, dynamic charge neutrality of the Au-NPs could be re-established through electron transfer from excitons. The light-controlled charge state of the Au-NPs could add optical addressability to memory elements

Self-slowdown and -advancement of fs pulses in a quantum-dot semiconductor optical amplifier

DEFF Research Database (Denmark)

Poel, Mike van der; Mørk, Jesper; Hvam, Jørn Märcher

2005-01-01

We demonstrate changes in the propagation time of 180 femtosecond pulses in a quantum-dot semiconductor optical amplifier as function of pulse input power and bias current. The results interpreted as a result of pulse reshaping by gain saturation but are also analogous to coherent population osci...

Theory of Covalent Adsorbate Frontier Orbital Energies on Functionalized Light-Absorbing Semiconductor Surfaces.

Science.gov (United States)

Yu, Min; Doak, Peter; Tamblyn, Isaac; Neaton, Jeffrey B

2013-05-16

Functional hybrid interfaces between organic molecules and semiconductors are central to many emerging information and solar energy conversion technologies. Here we demonstrate a general, empirical parameter-free approach for computing and understanding frontier orbital energies - or redox levels - of a broad class of covalently bonded organic-semiconductor surfaces. We develop this framework in the context of specific density functional theory (DFT) and many-body perturbation theory calculations, within the GW approximation, of an exemplar interface, thiophene-functionalized silicon (111). Through detailed calculations taking into account structural and binding energetics of mixed-monolayers consisting of both covalently attached thiophene and hydrogen, chlorine, methyl, and other passivating groups, we quantify the impact of coverage, nonlocal polarization, and interface dipole effects on the alignment of the thiophene frontier orbital energies with the silicon band edges. For thiophene adsorbate frontier orbital energies, we observe significant corrections to standard DFT (∼1 eV), including large nonlocal electrostatic polarization effects (∼1.6 eV). Importantly, both results can be rationalized from knowledge of the electronic structure of the isolated thiophene molecule and silicon substrate systems. Silicon band edge energies are predicted to vary by more than 2.5 eV, while molecular orbital energies stay similar, with the different functional groups studied, suggesting the prospect of tuning energy alignment over a wide range for photoelectrochemistry and other applications.

fdtd Semiconductor Microlaser Simulator v. 2.0

Energy Technology Data Exchange (ETDEWEB)

2009-01-29

This software simulates the transient optical response of a system of in-plane semiconductor lasers/waveguides of almost arbitrary 2D complexity using the effective index approximation. Gain is calculated by solving a 3D transport equation from an arbitrary contact geometry and epi structure to get an input current density to the active region, followed by a diffusion equation for carriers in that layer. The gain is saturable and frequency dependent so that output powers and frequency spectrum/longitudinal modes are predicted. Solution is by the finite-difference time-domain method on a 2D triangular grid, so that propagation in any direction along the epi plan is allowed, and arbitrary laser/waveguide shapes can be modeled, including rings. Runtime considerations, however, limit the practical solution region to approximately 500 microns**2 so that the applicability of this code is primarily limited to micro-resinators. Modeling of standard-edge-emitting semiconductor lasers is better accomplished using algorithms based on bi-directional beam propagation.

Characterization of rich in calcium materials using X-ray selective absorbers

International Nuclear Information System (INIS)

Guereca, G.; Ruvalcaba, J.L.

2004-01-01

For Particle Induced X-ray Emission Spectroscopy (PIXE) and X-ray Fluorescence Technique (FRX), the analysis of materials rich in one or two elements may present some difficulties due to high counting rates and saturation effects in X-ray detectors. In this case, it is possible to use selective absorbers in order to reduce the intensity of the major elements with low attenuation for the X-rays of other elements of the material. Using selective absorbers, the detection limits and the sensitivity are increased. For rich Ca materials (shells, bone, teeth and stucco, for instance), the high intensity of Ca X-rays interferes with the detection of lighter and heavier elements. Cl, Ar and Ag compounds are good candidates for Ca selective absorbers, but only Ag and Ar may have a practical absorber thickness. A selective absorber for Ca X-rays using a combination of thin Ag films and a flux of Ar and He was tested at the external beam setup of the Tandem Pelletron Accelerator for PIXE measurements. The improvement on elements detection on bone and colored stucco is shown. (Author) 8 refs., 2 tabs., 8 figs

Selective saturation method for EPR dosimetry with tooth enamel

International Nuclear Information System (INIS)

Ignatiev, E.A.; Romanyukha, A.A.; Koshta, A.A.; Wieser, A.

1996-01-01

The method of selective saturation is based on the difference in the microwave (mw) power dependence of the background and radiation induced EPR components of the tooth enamel spectrum. The subtraction of the EPR spectrum recorded at low mw power from that recorded at higher mw power provides a considerable reduction of the background component in the spectrum. The resolution of the EPR spectrum could be improved 10-fold, however simultaneously the signal-to-noise ratio was found to be reduced twice. A detailed comparative study of reference samples with known absorbed doses was performed to demonstrate the advantage of the method. The application of the selective saturation method for EPR dosimetry with tooth enamel reduced the lower limit of EPR dosimetry to about 100 mGy. (author)

Amorphous chalcogenide semiconductors for solid state dosimetric systems of high-energetic ionizing radiation

International Nuclear Information System (INIS)

Shpotyuk, O.

1997-01-01

The application possibilities of amorphous chalcogenide semiconductors use as radiation-sensitive elements of high-energetic (E > 1 MeV) dosimetric systems are analysed. It is shown that investigated materials are characterized by more wide region of registered absorbed doses and low temperature threshold of radiation information bleaching in comparison with well-known analogies based on coloring oxide glasses. (author)

Preparation of hollow microspheres of Ce{sup 3+} doped NiCo ferrite with high microwave absorbing performance

Energy Technology Data Exchange (ETDEWEB)

Duan, Hong-zhen, E-mail: duanhz2000@163.com; Zhou, Fang-ling; Cheng, Xia; Chen, Guo-hong; Li, Qiao-ling

2017-02-15

Hollow microspheres of Ce{sup 3+} doped NiCo-ferrites were synthesized by template-based-deposition and surface reaction method with carbon sphere as the template. The phase structure, morphology, magnetic properties and wave absorbing properties of the sample were characterized by X-ray powder diffraction(XRD), Scanning electronic microscopy(SEM), Vibration sample magnetometer (VSM) and a network vector analyzer (NVA), respectively. The results indicated that the particle size of the carbon sphere sample prepared by hydrothermal method was about 0.5 µm and the particle size of the Ni{sub 0.5}Co{sub 0.5}Fe{sub 2}O{sub 4} sample prepared by template-based method was about 300 nm. The influence of the amount of rare earth element on the magnetic and absorbing properties of sample was studied. The saturation magnetization and coercivity decreased gradually with the increase of the content of Ce. When the content of Ce was 0.02, the maximal saturation magnetization value and coercivity was 75.72 emu• g{sup −1} and 789.88 Oe, respectively. The associated ferrite hollow spheres have good absorbing performance, and the return loss value was −18.8 dB at 5500 MHz. - Highlights: • Hollow microspheres of Ce{sup 3+} doped NiCo-ferrites were synthesized by template-based-deposition and surface reaction method. • The influence of rare earth Ce{sup 3+} on the magnetic and absorbing properties of sample was studied. • When the content of Ce was 0.02, the maximal saturation magnetization value and coercivity was 75.72 emu• g{sup −1} and 789.88 Oe, respectively.

Continuous-wave to pulse regimes for a family of passively mode-locked lasers with saturable nonlinearity

Science.gov (United States)

Dikandé, Alain M.; Voma Titafan, J.; Essimbi, B. Z.

2017-10-01

The transition dynamics from continuous-wave to pulse regimes of operation for a generic model of passively mode-locked lasers with saturable absorbers, characterized by an active medium with non-Kerr nonlinearity, are investigated analytically and numerically. The system is described by a complex Ginzburg-Landau equation with a general m:n saturable nonlinearity (i.e {I}m/{(1+{{Γ }}I)}n, where I is the field intensity and m and n are two positive numbers), coupled to a two-level gain equation. An analysis of stability of continuous waves, following the modulational instability approach, provides a global picture of the self-starting dynamics in the system. The analysis reveals two distinct routes depending on values of the couple (m, n), and on the dispersion regime: in the normal dispersion regime, when m = 2 and n is arbitrary, the self-starting requires positive values of the fast saturable absorber and nonlinearity coefficients, but negative values of these two parameters for the family with m = 0. However, when the spectral filter is negative, the laser can self-start for certain values of the input field and the nonlinearity saturation coefficient Γ. The present work provides a general map for the self-starting mechanisms of rare-earth doped figure-eight fiber lasers, as well as Kerr-lens mode-locked solid-state lasers.

Electrical addressing and temporal tweezing of localized pulses in passively mode-locked semiconductor lasers

Science.gov (United States)

Javaloyes, J.; Camelin, P.; Marconi, M.; Giudici, M.

2017-08-01

This work presents an overview of a combined experimental and theoretical analysis on the manipulation of temporal localized structures (LSs) found in passively Vertical-Cavity Surface-Emitting Lasers coupled to resonant saturable absorber mirrors. We show that the pumping current is a convenient parameter for manipulating the temporal Localized Structures, also called localized pulses. While short electrical pulses can be used for writing and erasing individual LSs, we demonstrate that a current modulation introduces a temporally evolving parameter landscape allowing to control the position and the dynamics of LSs. We show that the localized pulses drifting speed in this landscape depends almost exclusively on the local parameter value instead of depending on the landscape gradient, as shown in quasi-instantaneous media. This experimental observation is theoretically explained by the causal response time of the semiconductor carriers that occurs on an finite timescale and breaks the parity invariance along the cavity, thus leading to a new paradigm for temporal tweezing of localized pulses. Different modulation waveforms are applied for describing exhaustively this paradigm. Starting from a generic model of passive mode-locking based upon delay differential equations, we deduce the effective equations of motion for these LSs in a time-dependent current landscape.

Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

Energy Technology Data Exchange (ETDEWEB)

Walker, A. W., E-mail: alexandre.walker@ise.fraunhofer.de; Heckelmann, S.; Karcher, C.; Höhn, O.; Went, C.; Niemeyer, M.; Bett, A. W.; Lackner, D. [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany)

2016-04-21

A power-dependent relative photoluminescence measurement method is developed for double-heterostructures composed of III-V semiconductors. Analyzing the data yields insight into the radiative efficiency of the absorbing layer as a function of laser intensity. Four GaAs samples of different thicknesses are characterized, and the measured data are corrected for dependencies of carrier concentration and photon recycling. This correction procedure is described and discussed in detail in order to determine the material's Shockley-Read-Hall lifetime as a function of excitation intensity. The procedure assumes 100% internal radiative efficiency under the highest injection conditions, and we show this leads to less than 0.5% uncertainty. The resulting GaAs material demonstrates a 5.7 ± 0.5 ns nonradiative lifetime across all samples of similar doping (2–3 × 10{sup 17 }cm{sup −3}) for an injected excess carrier concentration below 4 × 10{sup 12 }cm{sup −3}. This increases considerably up to longer than 1 μs under high injection levels due to a trap saturation effect. The method is also shown to give insight into bulk and interface recombination.

Synthesis and characterization of a new organic semiconductor material

Energy Technology Data Exchange (ETDEWEB)

Tiffour, Imane [Laboratoire de Génie Physique, Département de Physique, Université de Tiaret, Tiaret 14000 (Algeria); Faculté des Sciences et Technologies, Université Mustapha Stambouli, Mascara 29000 (Algeria); Dehbi, Abdelkader [Laboratoire de Génie Physique, Département de Physique, Université de Tiaret, Tiaret 14000 (Algeria); Mourad, Abdel-Hamid I., E-mail: ahmourad@uaeu.ac.ae [Mechanical Engineering Department, Faculty of Engineering, United Arab Emirates University, Al-Ain, P.O. Box 15551 (United Arab Emirates); Belfedal, Abdelkader [Faculté des Sciences et Technologies, Université Mustapha Stambouli, Mascara 29000 (Algeria); LPCMME, Département de Physique, Université d' Oran Es-sénia, 3100 Oran (Algeria)

2016-08-01

The objective of this study is to create an ideal mixture of Acetaminophen/Curcumin leading to a new and improved semiconductor material, by a study of the electrical, thermal and optical properties. This new material will be compared with existing semiconductor technology to discuss its viability within the industry. The electrical properties were investigated using complex impedance spectroscopy and optical properties were studied by means of UV-Vis spectrophotometry. The electric conductivity σ, the dielectric constant ε{sub r}, the activation energy E{sub a}, the optical transmittance T and the gap energy E{sub g} have been investigated in order to characterize our organic material. The electrical conductivity of the material is approximately 10{sup −5} S/m at room temperature, increasing the temperature causes σ to increase exponentially to approximately 10{sup −4} S/m. The activation energy obtained for the material is equal to 0.49 ± 0.02 ev. The optical absorption spectra show that the investigating material has absorbance in the visible range with a maximum wavelength (λ{sub max}) 424 nm. From analysis, the absorption spectra it was found the optical band gap equal to 2.6 ± 0.02 eV and 2.46 ± 0.02 eV for the direct and indirect transition, respectively. In general, the study shows that the developed material has characteristics of organic semiconductor material that has a promising future in the field of organic electronics and their potential applications, e.g., photovoltaic cells. - Highlights: • Development of a new organic acetaminophen/Curcumin semiconductor material. • The developed material has characteristics of an organic semiconductor. • It has electrical conductivity comparable to available organic semiconductors. • It has high optical transmittance and low permittivity/dielectric constant.

Synthesis and characterization of a new organic semiconductor material

International Nuclear Information System (INIS)

Tiffour, Imane; Dehbi, Abdelkader; Mourad, Abdel-Hamid I.; Belfedal, Abdelkader

2016-01-01

The objective of this study is to create an ideal mixture of Acetaminophen/Curcumin leading to a new and improved semiconductor material, by a study of the electrical, thermal and optical properties. This new material will be compared with existing semiconductor technology to discuss its viability within the industry. The electrical properties were investigated using complex impedance spectroscopy and optical properties were studied by means of UV-Vis spectrophotometry. The electric conductivity σ, the dielectric constant ε_r, the activation energy E_a, the optical transmittance T and the gap energy E_g have been investigated in order to characterize our organic material. The electrical conductivity of the material is approximately 10"−"5 S/m at room temperature, increasing the temperature causes σ to increase exponentially to approximately 10"−"4 S/m. The activation energy obtained for the material is equal to 0.49 ± 0.02 ev. The optical absorption spectra show that the investigating material has absorbance in the visible range with a maximum wavelength (λ_m_a_x) 424 nm. From analysis, the absorption spectra it was found the optical band gap equal to 2.6 ± 0.02 eV and 2.46 ± 0.02 eV for the direct and indirect transition, respectively. In general, the study shows that the developed material has characteristics of organic semiconductor material that has a promising future in the field of organic electronics and their potential applications, e.g., photovoltaic cells. - Highlights: • Development of a new organic acetaminophen/Curcumin semiconductor material. • The developed material has characteristics of an organic semiconductor. • It has electrical conductivity comparable to available organic semiconductors. • It has high optical transmittance and low permittivity/dielectric constant.

Control of ultrafast pulse propagation in semiconductor components

DEFF Research Database (Denmark)

Poel, Mike van der; Hansen, Per Lunnemann; Mørk, Jesper

2009-01-01

Time shifting of optical pulses with duration in the range from 100 fs to a few ps represents one extreme of slow light, where THz bandwidth for the slow down or speed up is necessary. The physics of the time shifting of such very short pulses involves the gain saturation of the optical medium...... and is different from the slow-light mechanisms responsible for time shifting of pulses of narrower bandwidth. Experimental and theoretical results with semiconductor components are presented, emphasizing the physics as well as the limitations imposed by the dynamical processes....

Amorphous chalcogenide semiconductors for solid state dosimetric systems of high-energetic ionizing radiation

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O. [Pedagogical University, Czestochowa (Poland)]|[Institute of Materials, Lvov (Ukraine)

1997-12-31

The application possibilities of amorphous chalcogenide semiconductors use as radiation-sensitive elements of high-energetic (E > 1 MeV) dosimetric systems are analysed. It is shown that investigated materials are characterized by more wide region of registered absorbed doses and low temperature threshold of radiation information bleaching in comparison with well-known analogies based on coloring oxide glasses. (author). 16 refs, 1 tab.

Photoinduced electron transfer from organic semiconductors onto redox mediators for CO2

International Nuclear Information System (INIS)

Portenkirchner, E.

2014-01-01

In this work the photoinduced electron transfer from organic semiconductors onto redox mediator catalysts for CO 2 reduction has been investigated. In the beginning, the work focuses on the identication, characterization and test of suitable catalyst materials. For this purpose, rhenium compounds with 2,2'-bipyridine bis(arylimino) acenaphthene ligands and pyridinium were tested for molecular homogenous catalysis. Infrared, ultraviolet-visible (UV-Vis) and nuclear magnetic resonance (NMR) spectroscopy were used for initial characterization of the catalyst substances. Since the interpretation of infrared spectra was difficult for large molecules based on measured data only, additionally infrared absorption spectra obtained by quantum mechanical density functional theory(DFT) calculations were successfully used to correlate characteristic features in the measured spectra to their molecular origin. It was found that experimentally observed data and quantum chemical predictions for the infrared spectra of the novel compounds are in good agreement. Additionally, quantum mechanical calculations were carried out for the determination of molecular orbital frontier energy levels and correlated to UV-Vis absorption and cyclic voltammetry measurements. Extensive cyclic voltammetry measurements and bulk controlled-potential electrolysis experiments were performed using a N 2 - and CO 2 -saturated electrolyte solution. Together with a detailed product analysis via infrared spectroscopy, gas and ion chromatography the results allowed electrochemical characterizations of the novel catalysts regarding their suitability for electrochemical CO 2 reduction. Once suitable catalysts were identied, the materials were immobilized on the electrode surface by electro-polymerization of the catalyst (5,5'bisphenylethynyl-2,2'-bipyridyl)Re(CO) 3 Cl itself or by incorporation of (2,2'-bipyridyl)Re(CO) 3 Cl into a polypyrrole matrix, thereby changing from homogeneous to

A transfer function approach to the small-signal response of saturated semiconductor optical amplifiers

DEFF Research Database (Denmark)

Nielsen, Mads Lønstrup; Blumenthal, D. J.; Mørk, Jesper

2000-01-01

A theoretical analysis of the small-signal frequency response (SSFR) of a wavelength converter based on cross-gain modulation in a semiconductor optical amplifier with a finite waveguide loss is presented. We use a transfer function formalism to explain the resonant behavior of the frequency...... response. The limitations to the magnitude of the spectral overshoot are also accounted for. Operating with the data and CW signals in a co-propagating configuration, we End that the resonance only exists for a finite waveguide loss. In a counter-propagating scheme, a resonance can exist regardless...

Ultra-thin, conformal, and hydratable color-absorbers using silk protein hydrogel

Science.gov (United States)

Umar, Muhammad; Min, Kyungtaek; Jo, Minsik; Kim, Sunghwan

2018-06-01

Planar and multilayered photonic devices offer unprecedented opportunities in biological and chemical sensing due to strong light-matter interactions. However, uses of rigid substances such as semiconductors and dielectrics confront photonic devices with issues of biocompatibility and a mechanical mismatch for their application on humid, uneven, and soft biological surfaces. Here, we report that favorable material traits of natural silk protein led to the fabrication of an ultra-thin, conformal, and water-permeable (hydratable) metal-insulator-metal (MIM) color absorber that was mapped on soft, curved, and hydrated biological interfaces. Strong absorption was induced in the MIM structure and could be tuned by hydration and tilting of the sample. The transferred MIM color absorbers reached the exhibition of a very strong resonant absorption in the visible and near infra-red ranges. In addition, we demonstrated that the conformal resonator could function as a refractometric glucose sensor applied on a contact lens.

Experimental techniques for characterising water in wood covering the range from dry to fully water-saturated

DEFF Research Database (Denmark)

Thybring, Emil Engelund; Kymäläinen, Maija; Rautkari, Lauri

2018-01-01

focuses on selected experimental techniques that can give deeper insights into various aspects of water in wood in the entire moisture domain from dry to fully water-saturated. These techniques fall into three broad categories: (1) gravimetric techniques that determine how much water is absorbed, (2...

Semiconductor apparatus and method of fabrication for a semiconductor apparatus

NARCIS (Netherlands)

2010-01-01

The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

Characteristics of the saturation curve of the ionization chambers in overlapping pulsed beams

International Nuclear Information System (INIS)

Park, S.H.; Kim, Y.K.; Kim, H.S.; Kang, S.M.; Ha, J.H.

2006-01-01

When a pulsed radiation is incident on an air-filled ionization chamber wherein the primary electrons are rapidly absorbed to become negative ions, it is known that the reciprocal of the ionizing current is linearly proportional to the reciprocal of the polarization voltage in the near saturation region. However, the relationship between the reciprocal of the ionizing current and the reciprocal of the polarization voltage will deviate from a simple linearity when the ion transit time in the ionization chamber is longer than the interval between the radiation pulses. Two thimble-type ionization chambers, one of which was designed and fabricated by us, were employed to measure the saturation curves of the ionization chambers in a pulsed Bremsstrahlung X-ray, which was generated with an electron accelerator. A model was developed to explain the shape of the measured saturation curves in the overlapping pulsed radiation, and the results of it were compared with the measured ones. The dependency of the shape of the saturation curve on the geometrical design of the ionization chambers in the pulsed radiation was discussed

Bit rate and pulse width dependence of four-wave mixing of short optical pulses in semiconductor optical amplifiers

DEFF Research Database (Denmark)

Diez, S.; Mecozzi, A.; Mørk, Jesper

1999-01-01

We investigate the saturation properties of four-wave mixing of short optical pulses in a semiconductor optical amplifier. By varying the gain of the optical amplifier, we find a strong dependence of both conversion efficiency and signal-to-background ratio on pulse width and bit rate....... In particular, the signal-to-background ratio can be optimized for a specific amplifier gain. This behavior, which is coherently described in experiment and theory, is attributed to the dynamics of the amplified spontaneous emission, which is the main source of noise in a semiconductor optical amplifier....

X-ray image intensifier camera tubes and semiconductor targets

International Nuclear Information System (INIS)

1979-01-01

A semiconductor target for use in an image intensifier camera tube and a camera using the target are described. The semiconductor wafer for converting an electron image onto electrical signal consists mainly of a collector region, preferably n-type silicon. It has one side for receiving the electron image and an opposite side for storing charge carriers generated in the collector region by high energy electrons forming a charge image. The first side comprises a highly doped surface layer covered with a metal buffer layer permeable to the incident electrons and thick enough to dissipate some of the incident electron energy thereby improving the signal-to-noise ratio. This layer comprises beryllium on niobium on the highly doped silicon surface zone. Low energy Kα X-ray radiation is generated in the first layer, the radiation generated in the second layer (mainly Lα radiation) is strongly absorbed in the silicon layer. A camera tube using such a target with a photocathode for converting an X-ray image into an electron image, means to project this image onto the first side of the semiconductor wafer and means to read out the charge pattern on the second side are also described. (U.K.)

Energy response of neutron area monitor with silicon semiconductor detector

International Nuclear Information System (INIS)

Kitaguchi, Hiroshi; Izumi, Sigeru; Kobayashi, Kaoru; Kaihara, Akihisa; Nakamura, Takashi.

1993-01-01

A prototype neutron area monitor with a silicon semiconductor detector has been developed which has the energy response of 1 cm dose equivalent recommended by the ICRP-26. Boron and proton radiators are coated on the surface of the silicon semiconductor detector. The detector is set at the center of a cylindrical polyethylene moderator. This moderator is covered by a porous cadmium board which serves as the thermal neutron absorber. Neutrons are detected as α-particles generated by the nuclear reaction 10 B(n,α) 7 Li and as recoil protons generated by the interaction of fast neutrons with hydrogen. The neutron energy response of the monitor was measured using thermal neutrons and monoenergetic fast neutrons generated by an accelerator. The response was consistent with the 1 cm dose equivalent response required for the monitor within ±34% in the range of 0.025 - 15 Mev. (author)

Fabrication of smooth patterned structures of refractory metals, semiconductors, and oxides via template stripping.

Science.gov (United States)

Park, Jong Hyuk; Nagpal, Prashant; McPeak, Kevin M; Lindquist, Nathan C; Oh, Sang-Hyun; Norris, David J

2013-10-09

The template-stripping method can yield smooth patterned films without surface contamination. However, the process is typically limited to coinage metals such as silver and gold because other materials cannot be readily stripped from silicon templates due to strong adhesion. Herein, we report a more general template-stripping method that is applicable to a larger variety of materials, including refractory metals, semiconductors, and oxides. To address the adhesion issue, we introduce a thin gold layer between the template and the deposited materials. After peeling off the combined film from the template, the gold layer can be selectively removed via wet etching to reveal a smooth patterned structure of the desired material. Further, we demonstrate template-stripped multilayer structures that have potential applications for photovoltaics and solar absorbers. An entire patterned device, which can include a transparent conductor, semiconductor absorber, and back contact, can be fabricated. Since our approach can also produce many copies of the patterned structure with high fidelity by reusing the template, a low-cost and high-throughput process in micro- and nanofabrication is provided that is useful for electronics, plasmonics, and nanophotonics.

Semiconductor-Electrocatalyst Interfaces: Theory, Experiment, and Applications in Photoelectrochemical Water Splitting.

Science.gov (United States)

Nellist, Michael R; Laskowski, Forrest A L; Lin, Fuding; Mills, Thomas J; Boettcher, Shannon W

2016-04-19

Light-absorbing semiconductor electrodes coated with electrocatalysts are key components of photoelectrochemical energy conversion and storage systems. Efforts to optimize these systems have been slowed by an inadequate understanding of the semiconductor-electrocatalyst (sem|cat) interface. The sem|cat interface is important because it separates and collects photoexcited charge carriers from the semiconductor. The photovoltage generated by the interface drives "uphill" photochemical reactions, such as water splitting to form hydrogen fuel. Here we describe efforts to understand the microscopic processes and materials parameters governing interfacial electron transfer between light-absorbing semiconductors, electrocatalysts, and solution. We highlight the properties of transition-metal oxyhydroxide electrocatalysts, such as Ni(Fe)OOH, because they are the fastest oxygen-evolution catalysts known in alkaline media and are (typically) permeable to electrolyte. We describe the physics that govern the charge-transfer kinetics for different interface types, and show how numerical simulations can explain the response of composite systems. Emphasis is placed on "limiting" behavior. Electrocatalysts that are permeable to electrolyte form "adaptive" junctions where the interface energetics change during operation as charge accumulates in the catalyst, but is screened locally by electrolyte ions. Electrocatalysts that are dense, and thus impermeable to electrolyte, form buried junctions where the interface physics are unchanged during operation. Experiments to directly measure the interface behavior and test the theory/simulations are challenging because conventional photoelectrochemical techniques do not measure the electrocatalyst potential during operation. We developed dual-working-electrode (DWE) photoelectrochemistry to address this limitation. A second electrode is attached to the catalyst layer to sense or control current/voltage independent from that of the

Faraday effect in Cd1-xMnxTe semimagnetic semiconductor

International Nuclear Information System (INIS)

Vatamanyuk, P.P.; Savitskij, A.V.; Savchuk, A.I.; Ul'yanitskij, K.S.

1988-01-01

The Faraday effect is investigated in the semimagnetic semiconductor Cd 1-x Mn x Te (0≥x≤0.3) in the spectral range from 0.6 to 1.8 eV at temperatures between 4.2 and 350 K and in magnetic fields up to 250 kOe. Some peculiarities in the dispersion of the Faraday rotation (FR) are observed which are connected with a change in the direction of rotation depending on the composition and temperature. The results are analyzed by assuming the FR to consist of three components: an interband, exciton and intracentral contribution. The deviation of FR from saturation in strong magnetic fields is interpreted within the framework of antiferromagnetic exchange interaction between the Mn 2+ ions. On the basis of an analysis of the FR temperature dependence it is suggested that the spontaneous Faraday effect is characteristic of semimagnetic semiconductors in spin glass phase

Nonlinear saturation controller for vibration supersession of a nonlinear composite beam

Energy Technology Data Exchange (ETDEWEB)

Hamed, Y. S. [Menofia University, Menouf (Egypt); Amer, Y. A. [Zagazig University, Zagazig (Egypt)

2014-08-15

In this paper, a study for nonlinear saturation controller (NSC) is presented that used to suppress the vibration amplitude of a structural dynamic model simulating nonlinear composite beam at simultaneous sub-harmonic and internal resonance excitation. The absorber exploits the saturation phenomenon that is known to occur in dynamical systems with quadratic non-linearities of the feedback gain and a two-to-one internal resonance. The analytical solution for the system and the nonlinear saturation controller are obtained using method of multiple time scales perturbation up to the second order approximation. All possible resonance cases were extracted at this approximation order and studied numerically. The stability of the system at the worst resonance case (Ω = 2ω{sub s} and ω{sub s} =2ω{sub C}) is investigated using both frequency response equations and phase-plane trajectories. The effects of different parameters on the system and the controller are studied numerically. The effect of some types of controller on the system is investigated numerically. The simulation results are achieved using Matlab and Maple programs.

Development of an oxygen saturation measuring system by using near-infrared spectroscopy

Science.gov (United States)

Kono, K.; Nakamachi, E.; Morita, Y.

2017-08-01

Recently, the hypoxia imaging has been recognized as the advanced technique to detect cancers because of a strong relationship with the biological characterization of cancer. In previous studies, hypoxia imaging systems for endoscopic diagnosis have been developed. However, these imaging technologies using the visible light can observe only blood vessels in gastric mucous membrane. Therefore, they could not detect scirrhous gastric cancer which accounts for 10% of all gastric cancers and spreads rapidly into submucous membrane. To overcome this problem, we developed a measuring system of blood oxygen saturation in submucous membrane by using near-infrared (NIR) spectroscopy. NIR, which has high permeability for bio-tissues and high absorbency for hemoglobin, can image and observe blood vessels in submucous membrane. NIR system with LED lights and a CCD camera module was developed to image blood vessels. We measured blood oxygen saturation using the optical density ratio (ODR) of two wavelengths, based on Lambert-Beer law. To image blood vessel clearly and measure blood oxygen saturation accurately, we searched two optimum wavelengths by using a multilayer human gastric-like phantom which has same optical properties as human gastric one. By using Monte Carlo simulation of light propagation, we derived the relationship between the ODR and blood oxygen saturation and elucidated the influence of blood vessel depth on measuring blood oxygen saturation. The oxygen saturation measuring methodology was validated with experiments using our NIR system. Finally, it was confirmed that our system can detect oxygen saturation in various depth blood vessels accurately.

Semiconductor Manufacturing equipment introduction

International Nuclear Information System (INIS)

Im, Jong Sun

2001-02-01

This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

Novel multi-chromophor light absorber concepts for DSSCs for efficient electron injection

Energy Technology Data Exchange (ETDEWEB)

Schuetz, Robert; Strothkaemper, Christian; Bartelt, Andreas; Hannappel, Thomas; Eichberger, Rainer [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Fasting, Carlo [Institut fuer Organische Chemie, Freie Universitaet Berlin, Takustrasse 3, 14195 Berlin (Germany); Thomas, Inara [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Institut fuer Organische Chemie, Freie Universitaet Berlin, Takustrasse 3, 14195 Berlin (Germany)

2011-07-01

Dye sensitized solar cells (DSSCs) operate by injecting electrons from the excited state of a light-harvesting dye into the continuum of conduction band states of a wide bandgap semiconductor. The light harvesting efficiency of pure organic dyes is limited by a narrow spectral electronic transition. A beneficial broad ground state absorption in the VIS region can be achieved by applying a single molecular dye system with multiple chromophors involving a Foerster resonance energy transfer (FRET) mechanism for an efficient electron injection. A model donor acceptor dye system capable for FRET chemically linked to colloidal TiO{sub 2} and ZnO nanorod surfaces was investigated in UHV environment. We used VIS/NIR femtosecond transient absorption spectroscopy and optical pump terahertz probe spectroscopy to study the charge injection dynamics of the antenna system. Different chromophors attached to a novel scaffold/anchor system connecting the organic absorber unit to the metal oxide semiconductor were probed.

Generation of nanosecond laser pulses at a 2.2-MHz repetition rate by a cw diode-pumped passively Q-switched Nd3+:YVO4 laser

International Nuclear Information System (INIS)

Nghia, Nguyen T; Hao, Nguyen V; Orlovich, Valentin A; Hung, Nguyen D

2011-01-01

We report a new configuration of a high-repetition rate nanosecond laser based on a semiconductor saturable absorber mirror (SESAM). The SESAM is conventional technical solution for passive mode-locking at 1064 nm and simultaneously used as a highly reflecting mirror and a saturable absorber in a high-Q and short cavity of a cw diode-end-pumped a-cut Nd 3+ :YVO 4 laser. Two laser beams are coupled out from the cavity using an intracavity low-reflection thin splitter. The laser characteristics are investigated as functions of pump and resonator parameters. Using a 1.8-W cw pump laser diode at 808 nm, the passively Q-switched SESAMbased laser generates 22-ns pulses with an average power of 275 mW at a pulse repetition rate of 2250 kHz.

Magnetic graphene enabled tunable microwave absorber via thermal control

Science.gov (United States)

Quan, L.; Qin, F. X.; Li, Y. H.; Estevez, D.; Fu, G. J.; Wang, H.; Peng, H.-X.

2018-06-01

By synthesizing nitrogen-doped graphene (NG) via a facile thermal annealing method, a fine control of the amount and location of doped nitrogen as well as the oxygen-containing functional groups is achieved with varying annealing temperature. The favorable magnetic properties have been achieved for N-doped rGO samples obtained at two temperatures of all NG samples, i.e., 500 °C and 900 °C with saturation magnetization of 0.63 emu g‑1 and 0.67 emu g‑1 at 2 K, respectively. This is attributed to the optimized competition of the N-doping and reduction process at 500 °C and the dominated reduction process at 900 °C. NG obtained at 300 °C affords the best overall absorbing performance: when the absorber thickness is 3.0 mm, the maximum absorption was ‑24.6 dB at 8.51 GHz, and the absorption bandwidth was 4.89 GHz (7.55–12.44 GHz) below ‑10 dB. It owes its large absorbing intensity to the good impedance match and significant dielectric loss. The broad absorption bandwidth benefits from local fluctuations of dielectric responses contributed by competing mechanisms. Despite the significant contribution from materials loss to the absorption, the one quarter-wavelength model is found to be responsible for the reflection loss peak positions. Of particular significance is that an appropriate set of electromagnetic parameters associated with reasonable reduction is readily accessible by convenient control of annealing temperature to modulate the microwave absorbing features of graphene. Thus, NG prepared by thermal annealing promises to be a highly efficient microwave absorbent.

Architectures for Improved Organic Semiconductor Devices

Science.gov (United States)

Beck, Jonathan H.

Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes

Studies of the absorbance peak on the N719 dye influence by combination between Cadmium Selenide (CdSeQDs and Zinc Sulfide(ZnSQDs

Directory of Open Access Journals (Sweden)

Saad Mohammad Azren

2018-01-01

Full Text Available The absorption rate of the photoanode can be influenced by the combination between the difference semiconductor quantum dot sensitizer. Six samples were prepared with difference weight percent (wt% of ZnS from 0% to 50% and constant wt% of CdSe which then will be called as semiconductor QDs were immersed in 0.5mM of N719 dye. The purity of ZnS powder and CdSe powder was determined using x-ray diffraction (XRD.The ultraviolet-visible spectrophotometry (Uv-Vis use to investigate the absorption spectrum and absorbance peak of this sample. 50 wt% of ZnS is the best composition to increase the absorbance peak of the photoanode. The Cyclic voltammetry (CV of varying wt% of ZnS, found that the 40 wt% of ZnS is suitable combination for a DSSC’s photoanode and produced the higher current.

Activation of molecular catalysts using semiconductor quantum dots

Science.gov (United States)

Meyer, Thomas J [Chapel Hill, NC; Sykora, Milan [Los Alamos, NM; Klimov, Victor I [Los Alamos, NM

2011-10-04

Photocatalytic materials based on coupling of semiconductor nanocrystalline quantum dots (NQD) and molecular catalysts. These materials have capability to drive or catalyze non-spontaneous chemical reactions in the presence of visible radiation, ultraviolet radiation, or both. The NQD functions in these materials as a light absorber and charge generator. Following light absorption, the NQD activates a molecular catalyst adsorbed on the surface of the NQD via transfer of one or more charges (either electrons or electron-holes) from the NQD to the molecular catalyst. The activated molecular catalyst can then drive a chemical reaction. A photoelectrolytic device that includes such photocatalytic materials is also described.

Semiconductor optical amplifiers for the 1000-1100-nm spectral range

International Nuclear Information System (INIS)

Lobintsov, A A; Shramenko, M V; Yakubovich, S D

2008-01-01

Two types of semiconductor optical amplifiers (SOAs) based on a double-layer quantum-well (InGa)As/(GaAl)As/GaAs heterostructure are investigated. The optical gain of more than 30 dB and saturation output power of more than 30 mW are achived at 1060 nm in pigtailed SOA modules. These SOAs used as active elements of a tunable laser provide rapid continuous tuning within 85 nm and 45 nm at output powers of 0.5 mW and more than 30 mW, respectively. (active media, lasers, and amplifiers)

Slow light in a semiconductor waveguide for true-time delay applications in microwave photonics

DEFF Research Database (Denmark)

Öhman, Filip; Yvind, Kresten; Mørk, Jesper

2007-01-01

We have investigated the slowand fast light properties of a semiconductor waveguide device employing concatenated gain and absorber sections. This letter presents the experimental results as well as theoretical modeling. A large phase shift of 110 and a true-time delay of more than 150 ps are dem...... are demonstrated. The combination of amplitude and phase control of the modulated signal shows great promise for applications within microwave photonics....

Pump-probe surface photovoltage spectroscopy measurements on semiconductor epitaxial layers

International Nuclear Information System (INIS)

Jana, Dipankar; Porwal, S.; Sharma, T. K.; Oak, S. M.; Kumar, Shailendra

2014-01-01

Pump-probe Surface Photovoltage Spectroscopy (SPS) measurements are performed on semiconductor epitaxial layers. Here, an additional sub-bandgap cw pump laser beam is used in a conventional chopped light geometry SPS setup under the pump-probe configuration. The main role of pump laser beam is to saturate the sub-bandgap localized states whose contribution otherwise swamp the information related to the bandgap of material. It also affects the magnitude of Dember voltage in case of semi-insulating (SI) semiconductor substrates. Pump-probe SPS technique enables an accurate determination of the bandgap of semiconductor epitaxial layers even under the strong influence of localized sub-bandgap states. The pump beam is found to be very effective in suppressing the effect of surface/interface and bulk trap states. The overall magnitude of SPV signal is decided by the dependence of charge separation mechanisms on the intensity of the pump beam. On the contrary, an above bandgap cw pump laser can be used to distinguish the signatures of sub-bandgap states by suppressing the band edge related feature. Usefulness of the pump-probe SPS technique is established by unambiguously determining the bandgap of p-GaAs epitaxial layers grown on SI-GaAs substrates, SI-InP wafers, and p-GaN epilayers grown on Sapphire substrates

Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

Science.gov (United States)

Zhang, Liping; Jaroniec, Mietek

2018-02-01

Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

Organic solar cells with graded absorber layers processed from nanoparticle dispersions.

Science.gov (United States)

Gärtner, Stefan; Reich, Stefan; Bruns, Michael; Czolk, Jens; Colsmann, Alexander

2016-03-28

The fabrication of organic solar cells with advanced multi-layer architectures from solution is often limited by the choice of solvents since most organic semiconductors dissolve in the same aromatic agents. In this work, we investigate multi-pass deposition of organic semiconductors from eco-friendly ethanol dispersion. Once applied, the nanoparticles are insoluble in the deposition agent, allowing for the application of further nanoparticulate layers and hence for building poly(3-hexylthiophene-2,5-diyl):indene-C60 bisadduct absorber layers with vertically graded polymer and conversely graded fullerene concentration. Upon thermal annealing, we observe some degrees of polymer/fullerene interdiffusion by means of X-ray photoelectron spectroscopy and Kelvin probe force microscopy. Replacing the common bulk-heterojunction by such a graded photo-active layer yields an enhanced fill factor of the solar cell due to an improved charge carrier extraction, and consequently an overall power conversion efficiency beyond 4%. Wet processing of such advanced device architectures paves the way for a versatile, eco-friendly and industrially feasible future fabrication of organic solar cells with advanced multi-layer architectures.

Analysis of timing jitter in external-cavity mode-locked semiconductor lasers

DEFF Research Database (Denmark)

Mulet, Josep; Mørk, Jesper

2006-01-01

We develop a comprehensive theoretical description of passive mode-locking in external-cavity mode-locked semiconductor lasers based on a fully distributed time-domain approach. The model accounts for the dispersion of both gain and refractive index, nonlinear gain saturation from ultrafast...... processes, self-phase modulation, and spontaneous emission noise. Fluctuations of the mode-locked pulses are characterized from the fully distributed model using direct integration of noise-skirts in the phase-noise spectrum and the soliton perturbations introduced by Haus. We implement the model in order...

Absorption and refractive index dynamics in waveguide semiconductor electroabsorbers

DEFF Research Database (Denmark)

Romstad, Francis Pascal

2002-01-01

in telecommunication systems.Both the amplitude and phase transfer functions of electroabsorption modulators as function of reverse bias and wavelength, are measured using a heterodyne detection technique. With this information, the bias and wavelength dependent áH-parameter is calculated and so......, that the fabricated electroabsorption modulators can generate high quality pulses for optical fiber transmission. The all-optical wavelength conversion and demultiplexing capabilities of the electroabsorbers, when operated as saturable absorbers, are investigated using femtosecond laser pulses in an amplitude...

Optical and spectroscopic studies on tannery wastes as a possible source of organic semiconductors

Science.gov (United States)

Nashy, El-Shahat H. A.; Al-Ashkar, Emad; Abdel Moez, A.

2012-02-01

Tanning industry produces a large quantity of solid wastes which contain hide proteins in the form of protein shavings containing chromium salts. The chromium wastes are the main concern from an environmental stand point of view, because chrome wastes posses a significant disposal problem. The present work is devoted to investigate the possibility of utilizing these wastes as a source of organic semi-conductors as an alternative method instead of the conventional ones. The chemical characterization of these wastes was determined. In addition, the Horizontal Attenuated Total Reflection (HATR) FT-IR spectroscopic analysis and optical parameters were also carried out for chromated samples. The study showed that the chromated samples had suitable absorbance and transmittance in the wavelength range (500-850 nm). Presence of chromium salt in the collagen samples increases the absorbance which improves the optical properties of the studied samples and leads to decrease the optical energy gap. The obtained optical energy gap gives an impression that the environmentally hazardous chrome shavings wastes can be utilized as a possible source of natural organic semiconductors with direct and indirect energy gap. This work opens the door to use some hazardous wastes in the manufacture of electronic devices such as IR-detectors, solar cells and also as solar cell windows.

All-optical reservoir computer based on saturation of absorption.

Science.gov (United States)

Dejonckheere, Antoine; Duport, François; Smerieri, Anteo; Fang, Li; Oudar, Jean-Louis; Haelterman, Marc; Massar, Serge

2014-05-05

Reservoir computing is a new bio-inspired computation paradigm. It exploits a dynamical system driven by a time-dependent input to carry out computation. For efficient information processing, only a few parameters of the reservoir needs to be tuned, which makes it a promising framework for hardware implementation. Recently, electronic, opto-electronic and all-optical experimental reservoir computers were reported. In those implementations, the nonlinear response of the reservoir is provided by active devices such as optoelectronic modulators or optical amplifiers. By contrast, we propose here the first reservoir computer based on a fully passive nonlinearity, namely the saturable absorption of a semiconductor mirror. Our experimental setup constitutes an important step towards the development of ultrafast low-consumption analog computers.

Investigation of induced changes after treatment with ionizing radiation and saturated steam in the case of paprika

International Nuclear Information System (INIS)

Kispeter, J.; Bajusz-Kabok, K.; Fekete, M.; Szabo, G.; Fodor, E.; Pali, T.

2002-01-01

Complete text of publication follows. Beside conventional food preservation methods, such new physical methods are also applied as ionising radiation, high hydrostatic pressure, high-tension gradient, fluctuating strong magnetic field as well as treatments with high-pressure saturated steam and microwaves. Since radiation treatment is the best known, it can be regarded as a basic method in comparative tests. In our work the preservation-induced changes were investigated for paprika griests of various origin and quality (different dyestuff contents). Samples were treated with ionising radiation, high-pressure saturated steam (140 deg C, 30 s) or with combinations of these. The changes were followed as a function of absorbed dose (2, 5, 7.5, 10 kGy) and storage time (0, 1, 2, 4, 12 weeks) using colour measurements, rheological and ESR methods. Our results are summarised as follows: (1) The treatment with high-pressure saturated steam is equivalent to that of 5 kGy absorbed γ-doses. Significant changes in dyestuff contents and surface colours can't be detected immediately after treatments. After storage of 12 weeks, decomposition of dyestuffs and changes in surface colours in samples treated with saturated steam are 20% greater than in control. Radiation results in a slight (few %) dyestuff decomposition and colour change (i.e. discolouration). (2) Rheological characteristics were changed in both treatments (apparent viscosities were increased) during storage. This is a reversible and permanent change in the case of treatments with ionising radiation and with high-pressure saturated steam, respectively. (3) Changes induced by microwave treatment are in accordance with rheological changes. (4) Treatment with saturated steam results in a decrease in the cellulose free radical content. The decrease is inversely proportional to dyestuff contents. (5) Decrease of cellulose radical concentration with the storage time is of exponential-like character. Radicals disappear at

Semiconductor physics

CERN Document Server

Böer, Karl W

2018-01-01

This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

Passively mode-locked high power Nd:GdVO4 laser with direct in-band pumping at 912 nm

Science.gov (United States)

Nadimi, Mohammad; Waritanant, Tanant; Major, Arkady

2018-01-01

We report on the first semiconductor saturable absorber mirror mode-locked Nd:GdVO4 laser directly diode-pumped at 912 nm. The laser generated 10.14 W of averaged output power at 1063 nm with the pulse width of 16 ps at the repetition rate of 85.2 MHz. The optical-to-optical efficiency and slope efficiency in the mode-locked regime were calculated to be 49.6% and 67.4% with respect to the absorbed pump power, respectively. Due to the low quantum defect pumping the output power was limited only by the available pump power.

Passive mode locking of a Tm,Ho:KY(WO4)2 laser around 2 microm.

Science.gov (United States)

Lagatsky, A A; Fusari, F; Calvez, S; Gupta, J A; Kisel, V E; Kuleshov, N V; Brown, C T A; Dawson, M D; Sibbett, W

2009-09-01

We report the first demonstration, to our knowledge, of passive mode locking in a Tm(3+), Ho(3+)-codoped KY(WO(4))(2) laser operating in the 2000-2060 nm spectral region. An InGaAsSb-based quantum well semiconductor saturable absorber mirror is used for the initiation and stabilization of the ultrashort pulse generation. Pulses as short as 3.3 ps were generated at 2057 nm with average output powers up to 315 mW at a pulse repetition frequency of 132 MHz for 1.15 W of absorbed pump power at 802 nm from a Ti:sapphire laser.

Control of fibre laser mode-locking by narrow-band Bragg gratings

International Nuclear Information System (INIS)

Laegsgaard, J

2008-01-01

The use of narrow-band high-reflectivity fibre Bragg gratings (FBGs) as end mirrors in a fibre laser cavity with passive mode-locking provided by a semiconductor saturable absorber mirror (SESAM) is investigated numerically. The FBG is found to control the energy range of stable mode-locking, which may be shifted far outside the regime of SESAM saturation by a suitable choice of FBG and cavity length. The pulse shape is controlled by the combined effects of FBG dispersion and self-phase modulation in the fibres, and a few ps pulses can be obtained with standard uniform FBGs

Diode-pumped passively mode-locked Nd:LuVO4 laser with LT-In0.25Ga0.75As saturable absorber

International Nuclear Information System (INIS)

Li, T; Zhao, S; Li, Y; Zhuo, Z; Yang, K; Li, G; Li, D; Yu, Z

2009-01-01

A diode pumped passively mode-locked Nd:LuVO 4 laser with a low temperature (LT) In 0.25 Ga 0.75 As absorber is realized in this paper. An In 0.25 Ga 0.75 As single-quantum-well absorber, which is grown by use of the metal-organic chemical-vapor deposition technique, acts as nonlinear absorber and output coupler simultaneously. A special cavity is designed to keep the power density on In 0.25 Ga 0.75 As under its damage threshold. Both the Q-switched and continuous-wave (cw) mode locking operation are experimentally realized. An average output power of 5.9 W with pulse width of 4.9 ps is achieved at the pump power of 22 W, corresponding to an optical conversion efficiency of 26.8%

Dual-sided microstructured semiconductor neutron detectors (DSMSNDs)

International Nuclear Information System (INIS)

Fronk, Ryan G.; Bellinger, Steven L.; Henson, Luke C.; Ochs, Taylor R.; Smith, Colten T.; Kenneth Shultis, J.; McGregor, Douglas S.

2015-01-01

Microstructured semiconductor neutron detectors (MSNDs) have in recent years received much interest as high-efficiency replacements for thin-film-coated thermal neutron detectors. The basic device structure of the MSND involves micro-sized trenches that are etched into a vertically-oriented pvn-junction diode that are backfilled with a neutron converting material. Neutrons absorbed within the converting material induce fission of the parent nucleus, producing a pair of energetic charged-particle reaction products that can be counted by the diode. The MSND deep-etched microstructures produce good neutron-absorption and reaction-product counting efficiencies, offering a 10× improvement in intrinsic thermal neutron detection efficiency over thin-film-coated devices. Performance of present-day MSNDs are nearing theoretical limits; streaming paths between the conversion-material backfilled trenches, allow a considerable fraction of neutrons to pass undetected through the device. Dual-sided microstructured semiconductor neutron detectors (DSMSNDs) have been developed that utilize a complementary second set of trenches on the back-side of the device to count streaming neutrons. DSMSND devices are theoretically capable of greater than 80% intrinsic thermal neutron detection efficiency for a 1-mm thick device. The first such prototype DSMSNDs, presented here, have achieved 29.48±0.29% nearly 2× better than MSNDs with similar microstructure dimensions.

Magnetization study of interlayer exchange in semiconductor EuS-PbS ferromagnetic wedge multilayers

International Nuclear Information System (INIS)

Kowalczyk, L.; Osinniy, V.; Chernyshova, M.; Dziawa, P.; Boratynski, A.; Story, T.; Smits, C.J.P.; Swagten, H.J.M.; Sipatov, A.Yu.; Volobuev, V.V.

2006-01-01

Interlayer coupling was experimentally studied in semiconductor EuS-PbS ferromagnetic superlattice wedge structures grown on KCl (0 0 1) substrates with the wedges covering the semiconductor nonmagnetic PbS spacer layer thickness from 0.3 to 6 nm. Structural parameters of the wedges were examined by X-ray diffraction analysis of EuS-PbS superlattice period. Measurements of magnetic hysteresis loops of EuS-PbS structures were performed by both SQUID (for small terminal parts of the wedge) and MOKE (magneto-optical analysis along the wedge) magnetometry. A strong decrease of magnetic remanence and an increase of saturation field observed for EuS-PbS structures with the PbS spacer thickness decreasing below about 1.5 nm is discussed in terms of the influence of antiferromagnetic interlayer coupling

Shock absorber

International Nuclear Information System (INIS)

Housman, J.J.

1978-01-01

A shock absorber is described for use in a hostile environment at the end of a blind passage for absorbing impact loads. The shock absorber includes at least one element which occupies the passage and which is comprised of a porous brittle material which is substantially non-degradable in the hostile environment. A void volume is provided in the element to enable the element to absorb a predetermined level of energy upon being crushed due to impact loading

On one peculiarity of the model describing the interaction of the electron beam with the semiconductor surface

Science.gov (United States)

Stepovich, M. A.; Amrastanov, A. N.; Seregina, E. V.; Filippov, M. N.

2018-01-01

The problem of heat distribution in semiconductor materials irradiated with sharply focused electron beams in the absence of heat exchange between the target and the external medium is considered by mathematical modeling methods. For a quantitative description of energy losses by probe electrons a model based on a separate description of the contributions of absorbed in the target and backscattered electrons and applicable to a wide class of solids and a range of primary electron energies is used. Using the features of this approach, the nonmonotonic dependence of the temperature of the maximum heating in the target on the energy of the primary electrons is explained. Some modeling results are illustrated for semiconductor materials of electronic engineering.

Experimental investigations of optical nonlinearities in semiconductor-doped glass waveguides

International Nuclear Information System (INIS)

Dannberg, P.; Possner, T.; Braeuer, A.; Bartuch, U.

1988-01-01

Both, thermal and electronic optical nonlinearities are studied in semiconductor-doped glass (SDG) waveguides which are fabricated in commercially available sharp-cut filters by Cs + -K + ion exchange. The relaxation time in photodarkened substrates is measured to be 30 ps. By means of a prism coupling set-up the saturation value of the nonlinear index change is determined. Furthermore, a high stability dual-beam interferometer is presented for the measurement of both, thermal and electronic nonlinear refractive index n 2 in planar waveguides. Conclusions about the application of SDG to opto-optical switching are given. (author)

Thermal Evaluation of Storage Rack with an Advanced Neutron Absorber during Normal Operation

Energy Technology Data Exchange (ETDEWEB)

Lee, Hee-Jae; Kim, Mi-Jin; Sohn, Dong-Seong [UNIST, Ulsan (Korea, Republic of)

2016-10-15

The storage capacity of the domestic wet storage site is expected to reach saturation from Hanbit in 2024 to Sin-wolseong in 2038 and accordingly management alternatives are urgently taken. Since installation of the dense rack is considered in the short term, it is necessary to urgently develop an advanced neutron absorber which can be applied to a spent nuclear fuel storage facility. Neutron absorber is the material for controlling the reactivity. A material which has excellent thermal neutron absorption ability, high strength and corrosion resistance must be selected as the neutron absorber. Existing neutron absorbers are made of boron which has a good thermal absorption ability such as BORAL and METAMIC. However, possible problems have been reported in using the boron-based neutron absorber for wet storage facility. Gadolinium is known to have higher neutron absorption cross-section than that of boron. And the strength of duplex stainless steel is about 1.5 times higher than stainless steel 304 which has been frequently used as a structural material. Therefore, duplex stainless steel which contains gadolinium is in consideration as an advanced neutron absorber. Temperature distribution is shown in figure 4. In pool bottom region near the inlet shows a relatively low tendency and heat generated from the fuel assemblies is transmitted to the pool upper region by the vertical flow. Also, temperature gradient appear in rack structures for the axial direction and temperature is uniformly distributed in the pool upper region. Table 1 presents the calculated results. The maximum temperature is 306.63K and does not exceed the 333.15K (60℃). The maximum temperature of the neutron absorber is 306.48K.

Dataset demonstrating the modeling of a high performance Cu(In,GaSe2 absorber based thin film photovoltaic cell

Directory of Open Access Journals (Sweden)

Md. Asaduzzaman

2017-04-01

Full Text Available The physical data of the semiconductor materials used in the design of a CIGS absorber based thin film photovoltaic cell have been presented in this data article. Besides, the values of the contact parameter and operating conditions of the cell have been reported. Furthermore, by conducting the simulation with data corresponding to the device structure: soda-lime glass (SLG substrate/Mo back-contact/CIGS absorber/CdS buffer/intrinsic ZnO/Al-doped ZnO window/Al-grid front-contact, the solar cell performance parameters such as open circuit voltage (Voc, short circuit current density Jsc, fill factor (FF, efficiency (η, and collection efficiency ηc have been analyzed.

Shock absorbing structure

International Nuclear Information System (INIS)

Kojima, Naoki; Matsushita, Kazuo.

1992-01-01

Small pieces of shock absorbers are filled in a space of a shock absorbing vessel which is divided into a plurality of sections by partitioning members. These sections function to prevent excess deformation or replacement of the fillers upon occurrence of falling accident. Since the shock absorbing small pieces in the shock absorbing vessel are filled irregularly, shock absorbing characteristics such as compression strength is not varied depending on the direction, but they exhibit excellent shock absorbing performance. They surely absorb shocks exerted on a transportation vessel upon falling or the like. If existing artificial fillers such as pole rings made of metal or ceramic and cut pieces such as alumium extrusion molding products are used as the shock absorbing pieces, they have excellent fire-proofness and cold resistance since the small pieces are inflammable and do not contain water. (T.M.)

Design of nanophotonic, hot-electron solar-blind ultraviolet detectors with a metal-oxide-semiconductor structure

International Nuclear Information System (INIS)

Wang, Zhiyuan; Wang, Xiaoxin; Liu, Jifeng

2014-01-01

Solar-blind ultraviolet (UV) detection refers to photon detection specifically in the wavelength range of 200 nm–320 nm. Without background noises from solar radiation, it has broad applications from homeland security to environmental monitoring. The most commonly used solid state devices for this application are wide band gap (WBG) semiconductor photodetectors (Eg > 3.5 eV). However, WBG semiconductors are difficult to grow and integrate with Si readout integrated circuits (ROICs). In this paper, we design a nanophotonic metal-oxide-semiconductor structure on Si for solar-blind UV detectors. Instead of using semiconductors as the active absorber, we use Sn nano-grating structures to absorb UV photons and generate hot electrons for internal photoemission across the Sn/SiO 2 interfacial barrier, thereby generating photocurrent between the metal and the n-type Si region upon UV excitation. Moreover, the transported hot electron has an excess kinetic energy >3 eV, large enough to induce impact ionization and generate another free electron in the conduction band of n-Si. This process doubles the quantum efficiency. On the other hand, the large metal/oxide interfacial energy barrier (>3.5 eV) also enables solar-blind UV detection by blocking the less energetic electrons excited by visible photons. With optimized design, ∼75% UV absorption and hot electron excitation can be achieved within the mean free path of ∼20 nm from the metal/oxide interface. This feature greatly enhances hot electron transport across the interfacial barrier to generate photocurrent. The simple geometry of the Sn nano-gratings and the MOS structure make it easy to fabricate and integrate with Si ROICs compared to existing solar-blind UV detection schemes. The presented device structure also breaks through the conventional notion that photon absorption by metal is always a loss in solid-state photodetectors, and it can potentially be extended to other active metal photonic devices. (paper)

The Electrical Characteristics of The N-Organic Semiconductor/P-Inorganic Semiconductor Diode

International Nuclear Information System (INIS)

Aydin, M. E.

2008-01-01

n-organic semiconductor (PEDOT) / p-inorganic semiconductor Si diode was formed by deep coating method. The method has been achieved by coating n-inorganic semiconductor PEDOT on top of p-inorganic semiconductor. The n-organic semiconductor PEDOT/ p-inorganic semiconductor diode demonstrated rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The barrier height , ideality factor values were obtained as of 0.88 eV and 1.95 respectively. The diode showed non-ideal I-V behavior with an ideality factor greater than unity that could be ascribed to the interfacial layer

Enzyme-semiconductor interactions: Routes from fundamental aspects to photoactive devices

Energy Technology Data Exchange (ETDEWEB)

Lewerenz, H.J. [Division of Solar Energy, Hahn-Meitner-Institut GmbH, Berlin (Germany)

2008-09-15

Scanning tunnelling microscopy (STM) experiments at protein-semiconductor systems are analyzed using concepts from applied semiconductor physics such as Fermi level pinning and MIS (metal-insulator-semiconductor) junction electronics. Routes for immobilization of enzymes (proteins) on nanostructured surfaces of MoTe{sub 2} and Si are outlined using so-called DLVO and non-DLVO interaction forces. An overview of the catalytic activity of the imaged enzymes, reverse transcriptases of the retroviruses HIV 1 and AMV (avian myeloblastosis virus), is given including their tertiary structural properties which is revealed also in the STM and tapping mode AFM images. For the interpretation of STM images, a resonant charge transfer mechanism is invoked, based on the potential dependence of the image contrast and the energy band structure of MoTe{sub 2} near the valence band maximum. First analyses of the charge transport from the semiconductor to the STM tip at negative bias of MoTe{sub 2} suggest that the observed uninhibited conductivity in the constant current experiments results from solvation-assisted release of electrons from traps that exist along the polypeptide chains and that charge transport occurs at the circumference of the enzymes where biological water is present. Therefore, charge injection into catalytically active enzymes such as hydrogenase or water oxidase of photosystem I and II with subsequent charge transport to the active sites appears difficult to realize. Possibilities of radiation-less long-distance energy transfer based on the Foerster mechanism, its multichromic extension and on Dexter exciton hopping are considered for catalytically active hybrid inorganic/organic absorber-enzyme structures. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Optically pumped semiconductor lasers: Conception and characterization of a single mode source for Cesium atoms manipulation

International Nuclear Information System (INIS)

Cocquelin, B.

2009-02-01

Lasers currently used in atomic clocks or inertial sensors are suffering from a lack of power, narrow linewidth or compactness for future spatial missions. Optically pumped semiconductor lasers, which combine the approach of classical solid state lasers and the engineering of semiconductor laser, are considered here as a candidate to a metrological laser source dedicated to the manipulation of Cesium atoms in these instruments. These lasers have demonstrated high power laser emission in a circular single transverse mode, as well as single longitudinal mode emission, favoured by the semiconductor structure and the external cavity design. We study the definition and the characterization of a proper semiconductor structure for the cooling and the detection of Cesium atoms at 852 nm. A compact and robust prototype tunable on the Cesium D2 hyperfine structure is built. The laser frequency is locked to an atomic transition thanks to a saturated absorption setup. The emission spectral properties are investigated, with a particular attention to the laser frequency noise and the laser linewidth. Finally, we describe and model the thermal properties of the semiconductor structure, which enables the simulation of the laser power characteristic. The experimental parameters are optimised to obtain the maximum output power with our structure. Thanks to our analysis, we propose several ways to overcome these limitations, by reducing the structure heating. (authors)

Pulsed-diode-pumped, all-solid-state, electro-optically controlled picosecond Nd:YAG lasers

International Nuclear Information System (INIS)

Gorbunkov, Mikhail V; Shabalin, Yu V; Konyashkin, A V; Kostryukov, P V; Olenin, A N; Tunkin, V G; Morozov, V B; Rusov, V A; Telegin, L S; Yakovlev, D V

2005-01-01

The results of the development of repetitively pulsed, diode-pumped, electro-optically controlled picosecond Nd:YAG lasers of two designs are presented. The first design uses the active-passive mode locking with electro-optical lasing control and semiconductor saturable absorber mirrors (SESAM). This design allows the generation of 15-50-ps pulses with an energy up to 0.5 mJ and a maximum pulse repetition rate of 100 Hz. The laser of the second design generates 30-ps pulses due to combination of positive and negative electro-optical feedback and the control of the electro-optical modulator by the photocurrent of high-speed semiconductor structures. (active media. lasers)

Semiconductor Physical Electronics

CERN Document Server

Li, Sheng

2006-01-01

Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

Optical and spectroscopic studies on tannery wastes as a possible source of organic semiconductors.

Science.gov (United States)

Nashy, El-Shahat H A; Al-Ashkar, Emad; Moez, A Abdel

2012-02-01

Tanning industry produces a large quantity of solid wastes which contain hide proteins in the form of protein shavings containing chromium salts. The chromium wastes are the main concern from an environmental stand point of view, because chrome wastes posses a significant disposal problem. The present work is devoted to investigate the possibility of utilizing these wastes as a source of organic semi-conductors as an alternative method instead of the conventional ones. The chemical characterization of these wastes was determined. In addition, the Horizontal Attenuated Total Reflection (HATR) FT-IR spectroscopic analysis and optical parameters were also carried out for chromated samples. The study showed that the chromated samples had suitable absorbance and transmittance in the wavelength range (500-850 nm). Presence of chromium salt in the collagen samples increases the absorbance which improves the optical properties of the studied samples and leads to decrease the optical energy gap. The obtained optical energy gap gives an impression that the environmentally hazardous chrome shavings wastes can be utilized as a possible source of natural organic semiconductors with direct and indirect energy gap. This work opens the door to use some hazardous wastes in the manufacture of electronic devices such as IR-detectors, solar cells and also as solar cell windows. Copyright © 2011 Elsevier B.V. All rights reserved.

Fundamentals of semiconductor devices

CERN Document Server

Lindmayer, Joseph

1965-01-01

Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

Spectrophotometric measurement of calcium carbonate saturation states in seawater.

Science.gov (United States)

Easley, Regina A; Patsavas, Mark C; Byrne, Robert H; Liu, Xuewu; Feely, Richard A; Mathis, Jeremy T

2013-02-05

Measurements of ocean pH and carbonate ion concentrations in the North Pacific and Arctic Oceans were used to determine calcium carbonate saturation states (Ω(CaCO(3))) from spectrophotometric methods alone. Total carbonate ion concentrations, [CO(3)(2-)](T), were for the first time at sea directly measured using Pb(II) UV absorbance spectra. The basis of the method is given by the following: [formula see text] where (CO(3))β(1) is the PbCO(3)(0) formation constant, e(i) are molar absorptivity ratios, and R = (250)A/(234)A (ratio of absorbances measured at 250 and 234 nm). On the basis of shipboard and laboratory Pb(II) data and complementary carbon-system measurements, the experimental parameters were determined to be (25 °C) the following: [formula see text]. The resulting mean difference between the shipboard spectrophotometric and conventional determinations of [CO(3)(2-)](T) was ±2.03 μmol kg(-1). The shipboard analytical precision of the Pb(II) method was ∼1.71 μmol kg(-1) (2.28%). Spectrophotometric [CO(3)(2-)](T) and pH(T) were then combined to calculate Ω(CaCO(3)). For the case of aragonite, 95% of the spectrophotometric aragonite saturation states (Ω(Aspec)) were within ±0.06 of the conventionally calculated values (Ω(Acalc)) when 0.5 ≤ Ω(A) ≤ 2.0. When Ω(A) > 2.0, 95% of the Ω(Aspec) values were within ±0.18 of Ω(Acalc). Our shipboard experience indicates that spectrophotometric determinations of [CO(3)(2-)](T) and Ω(CaCO(3)) are straightforward, fast, and precise. The method yields high-quality measurements of two important, rapidly changing aspects of ocean chemistry and offers capabilities suitable for long-term automated in situ monitoring.

Important role of calcium chloride in preventing carbon monoxide generation during desflurane degradation with alkali hydroxide-free carbon dioxide absorbents.

Science.gov (United States)

Ando, Takahiro; Mori, Atsushi; Ito, Rie; Nishiwaki, Kimitoshi

2017-12-01

We investigated whether calcium chloride (CaCl 2 ), a supplementary additive in carbon dioxide (CO 2 ) absorbents, could affect carbon monoxide (CO) production caused by desflurane degradation, using a Japanese alkali-free CO 2 absorbent Yabashi Lime ® -f (YL-f), its CaCl 2 -free and 1% CaCl 2 -added derivatives, and other commercially available alkali-free absorbents with or without CaCl 2 . The reaction between 1 L of desflurane gas (3-10%) and 20 g of desiccated specimen was performed in an artificial closed-circuit anesthesia system for 3 min at 20 or 40 °C. The CO concentration was measured using a gas chromatograph equipped with a semiconductor sensor detector. The systems were validated by detecting dose-dependent CO production with an alkali hydroxide-containing CO 2 absorbent, Sodasorb ® . Compared with YL-f, the CaCl 2 -free derivative caused the production of significantly more CO, while the 1% CaCl 2 -added derivative caused the production of a comparable amount of CO. These phenomena were confirmed using commercially available absorbents AMSORB ® PLUS, an alkali-free absorbent with CaCl 2 , and LoFloSorb™, an alkali-free absorbent without CaCl 2 . These results suggest that CaCl 2 plays an important role in preventing CO generation caused by desflurane degradation with alkali hydroxide-free CO 2 absorbents like YL-f.

Nonlinear optimal filter technique for analyzing energy depositions in TES sensors driven into saturation

Directory of Open Access Journals (Sweden)

B. Shank

2014-11-01

Full Text Available We present a detailed thermal and electrical model of superconducting transition edge sensors (TESs connected to quasiparticle (qp traps, such as the W TESs connected to Al qp traps used for CDMS (Cryogenic Dark Matter Search Ge and Si detectors. We show that this improved model, together with a straightforward time-domain optimal filter, can be used to analyze pulses well into the nonlinear saturation region and reconstruct absorbed energies with optimal energy resolution.

Absorbing Property of Multi-layered Short Carbon Fiber Absorbing Coating

OpenAIRE

Liu, Zhaohui; Tao, Rui; Ban, Guodong; Luo, Ping

2018-01-01

The radar absorbing coating was prepared with short carbon fiber asabsorbent and waterborne polyurethane (WPU) as matrix resin. The coating’s absorbing property was tested with vectornetwork analyzer, using aramid honeycomb as air layer which was matched withcarbon fiber coating. The results demonstrate that the single-layered carbonfiber absorbing coating presented relatively poor absorbing property when thelayer was thin, and the performance was slightly improved after the matched airlayer ...

Compound Semiconductor Radiation Detector

International Nuclear Information System (INIS)

Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

2005-01-01

In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

Solid spectroscopy: semiconductors

International Nuclear Information System (INIS)

Silva, C.E.T.G. da

1983-01-01

Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

NARCIS (Netherlands)

2008-01-01

The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

Q-switched pulse laser generation from double-cladding Nd:YAG ceramics waveguides.

Science.gov (United States)

Tan, Yang; Luan, Qingfang; Liu, Fengqin; Chen, Feng; Vázquez de Aldana, Javier Rodríguez

2013-08-12

This work reports on the Q-switched pulsed laser generation from double-cladding Nd:YAG ceramic waveguides. Double-cladding waveguides with different combination of diameters were inscribed into a sample of Nd:YAG ceramic. With an additional semiconductor saturable absorber, stable pulsed laser emission at the wavelength of 1064 nm was achieved with pulses of 21 ns temporal duration and ~14 μJ pulse energy at a repetition rate of 3.65 MHz.

Electromagnetic behavior of radar absorbing materials based on Ca hexaferrite modified with Co-Ti ions and doped with La

Directory of Open Access Journals (Sweden)

Valdirene Aparecida da Silva

2009-06-01

Full Text Available Radar Absorbing Materials (RAM are compounds that absorb incidental electromagnetic radiation in tuned frequencies and dissipate it as heat. Its preparation involves the adequate processing of polymeric matrices filled with compounds that act as radar absorbing centers in the microwave range. This work shows the electromagnetic evaluation of RAM based on CoTi and La doped Ca hexaferrite. Vibrating Sample Magnetization analyses show that ion substitution promoted low values for the parameters of saturation magnetization (123.65 Am2/kg and coercive field (0.07 T indicating ferrite softening. RAM samples obtained using different hexaferrite concentrations (40-80 per cent, w/w show variations in complex permeability and permittivity parameters and also in the performance of incidental radiation attenuation. Microwave attenuation values between 40 and 98 per cent were obtained.

Contacts to semiconductors

International Nuclear Information System (INIS)

Tove, P.A.

1975-08-01

Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

Saturated bonds and anomalous electronic transport in transition-metal aluminides

Energy Technology Data Exchange (ETDEWEB)

Schmidt, T.

2006-05-22

This thesis deals with the special electronic properties of the transition-metal aluminides. Following quasicrystals and their approximants it is shown that even materials with small elementary cells exhibit the same surprising effects. So among the transition-metal aluminides also semi-metallic and semiconducting compounds exist, although if they consist of classic-metallic components like Fe, Al, or Cr. These properties are furthermore coupled with a deep pseusogap respectively gap in the density of states and strongly covalent bonds. Bonds are described in this thesis by two eseential properties. First by the bond charge and second by the energetic effect of the bond. It results that in the caes of semiconducting transition-metal aluminides both a saturation of certain bonds and a bond-antibond alteration in the Fermi level is present. By the analysis of the near-order in form of the so-calles coordination polyeders it has been succeeded to establish a simple rule for semiconductors, the five-fold coordination for Al. This rule states that aluminium atoms with their three valence electrons are not able to build more than five saturated bonds to their nearest transition-metal neighbours. In excellent agreement with the bond angles predicted theoretically under assumption of equal-type bonds it results that all binary transition-element aluminide semiconductors exhibit for the Al atoms the same near order. Typical values for specific resistances of the studied materials at room temperature lie in the range of some 100 {mu}{omega}cm, which is farly larger than some 10 {mu}{omega}cm as in the case of the unalloyed metals. SUrprising is furthermore a high transport anisotropy with a ratio of the specific resistances up to 3.0. An essential result of this thesis can be seen in the coupling of the properties of the electronic transport and the bond properties. The small conducitivities could be explained by small values in the density of states and a bond

Semiconductor spintronics

International Nuclear Information System (INIS)

Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

2007-01-01

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

Method of manufacturing a semiconductor sensor device and semiconductor sensor device

NARCIS (Netherlands)

2009-01-01

The invention relates to a method of manufacturing a semiconductor sensor device (10) for sensing a substance comprising a plurality of mutually parallel mesa-shaped semiconductor regions (1) which are formed on a surface of a semiconductor body (11) and which are connected at a first end to a first

Changes induced in spice paprika powder by treatment with ionizing radiation and saturated steam

International Nuclear Information System (INIS)

Kispeter, J.; Bajusz-Kabok, K.; Fekete, M.; Szabo, G.; Fodor, E.; Pali, T.

2003-01-01

The changes in spice paprika powder induced by ionizing radiation, saturated steam (SS) and their combination were studied as a function of the absorbed radiation dose and the storage time. The SS treatment lead to a decrease in color content (lightening) after 12 weeks of storage, together with the persistence of free radicals and viscosity changes for a longer period. The results suggest that ionizing radiation is a more advantageous method as concerns preservation of the quality of spice paprika

Semiconductor statistics

CERN Document Server

Blakemore, J S

1987-01-01

In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

Method of absorbing UF6 from gaseous mixtures in alkamine absorbents

International Nuclear Information System (INIS)

Lafferty, R.H.; Smiley, S.H.; Radimer, K.J.

1976-01-01

A method is described for recovering UF 6 from gaseous mixtures by absorption in a liquid. The liquid absorbent must have a relatively low viscosity and at least one component of the absorbent is an alkamine having less than 3 carbon atoms bonded to the amino nitrogen, less than 2 of the carbon atoms other than those bonded to the amino nitrogen are free of the hydroxy radical and precipitate the absorbed uranium from the absorbent. At least one component of the absorbent is chosen from the group consisting of ethanolamine, diethanolamine, and 3-methyl-3-amino-propane-diol-1,2

Saturated Switching Systems

CERN Document Server

Benzaouia, Abdellah

2012-01-01

Saturated Switching Systems treats the problem of actuator saturation, inherent in all dynamical systems by using two approaches: positive invariance in which the controller is designed to work within a region of non-saturating linear behaviour; and saturation technique which allows saturation but guarantees asymptotic stability. The results obtained are extended from the linear systems in which they were first developed to switching systems with uncertainties, 2D switching systems, switching systems with Markovian jumping and switching systems of the Takagi-Sugeno type. The text represents a thoroughly referenced distillation of results obtained in this field during the last decade. The selected tool for analysis and design of stabilizing controllers is based on multiple Lyapunov functions and linear matrix inequalities. All the results are illustrated with numerical examples and figures many of them being modelled using MATLAB®. Saturated Switching Systems will be of interest to academic researchers in con...

Semiconductor laser shearing interferometer

International Nuclear Information System (INIS)

Ming Hai; Li Ming; Chen Nong; Xie Jiaping

1988-03-01

The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

Nanoscale charcoal powder induced saturable absorption and mode-locking of a low-gain erbium-doped fiber-ring laser

International Nuclear Information System (INIS)

Lin, Yung-Hsiang; Chi, Yu-Chieh; Lin, Gong-Ru

2013-01-01

Triturated charcoal nano-powder directly brushed on a fiber connector end-face is used for the first time as a fast saturable absorber for a passively mode-locked erbium-doped fiber-ring laser (EDFL). These dispersant-free charcoal nano-powders with a small amount of crystalline graphene phase and highly disordered carbon structure exhibit a broadened x-ray diffraction peak and their Raman spectrum shows the existence of a carbon related D-band at 1350 cm −1 and the disappearance of the 2D-band peak at 2700 cm −1 . The charcoal nano-powder exhibits a featureless linear absorbance in the infrared region with its linear transmittance of 0.66 nonlinearly saturated at 0.73 to give a ΔT/T of 10%. Picosecond mode-locking at a transform-limited condition of a low-gain EDFL is obtained by using the charcoal nano-powder. By using a commercial EDFA with a linear gain of only 17 dB at the saturated output power of 17.5 dB m required to initiate the saturable absorption of the charcoal nano-powder, the EDFL provides a pulsewidth narrowing from 3.3 to 1.36 ps associated with its spectral linewidth broadening from 0.8 to 1.83 nm on increasing the feedback ratio from 30 to 90%. This investigation indicates that all the carbon-based materials containing a crystalline graphene phase can be employed to passively mode-lock the EDFL, however, the disordered carbon structure inevitably induces a small modulation depth and a large mode-locking threshold, thus limiting the pulsewidth shortening. Nevertheless, the nanoscale charcoal passively mode-locked EDFL still shows the potential to generate picosecond pulses under a relatively low cavity gain. An appropriate cavity design can be used to compensate this defect-induced pulsewidth limitation and obtain a short pulsewidth. (letter)

Studies of non-isothermal flow in saturated and partially saturated porous media

International Nuclear Information System (INIS)

Ho, C.K.; Maki, K.S.; Glass, R.J.

1993-01-01

Physical and numerical experiments have been performed to investigate the behavior of nonisothermal flow in two-dimensional saturated and partially saturated porous media. The physical experiments were performed to identify non-isothermal flow fields and temperature distributions in fully saturated, half-saturated, and residually saturated two-dimensional porous media with bottom heating and top cooling. Two counter-rotating liquid-phase convective cells were observed to develop in the saturated regions of all three cases. Gas-phase convection was also evidenced in the unsaturated regions of the partially saturated experiments. TOUGH2 numerical simulations of the saturated case were found to be strongly dependent on the assumed boundary conditions of the physical system. Models including heat losses through the boundaries of the test cell produced temperature and flow fields that were in better agreement with the observed temperature and flow fields than models that assumed insulated boundary conditions. A sensitivity analysis also showed that a reduction of the bulk permeability of the porous media in the numerical simulations depressed the effects of convection, flattening the temperature profiles across the test cell

POWER, METALLURGICAL AND CHEMICAL MECHANICAL ENGINEERING THERMOELECTRIC EVENTS IN LIGHT-EMITTING BIPOLAR SEMICONDUCTOR STRUCTURES

Directory of Open Access Journals (Sweden)

P. A. Magomedova

2017-01-01

Full Text Available Objective. The development of light-emitting bipolar semiconductor structures having a low level of parasitic heat release.Methods. A method for converting thermoelectric heat in bipolar semiconductor structures into optical radiation to divert the excess energy into the environment was developed. At the same time, the cooling effect on thermoelectric junctions remains. Instead of an inertial process of conductive or convective heat transfer, practically instantaneous heat removal from electronic components to the environment takes place.Results. As a result, light-emitting bipolar semiconductor structures will allow more powerful devices with greater speed and degree of integration to be created. It is possible to produce transparent LED matrices with a two-way arrangement of transparent solar cells and mirror metal electrodes along the perimeter. When current is applied, the LED matrix on one of the transitions will absorb thermal energy; on other electrodes, it will emit radiation that is completely recovered into electricity by means of transparent solar cells following repeated reflection between the mirror electrodes. The low efficiency of solar cells will be completely compensated for with the multiple passages of photons through these batteries.Conclusion. Light-emitting bipolar semiconductor structures will not only improve the reliability of electronic components in a wide range of performance characteristics, but also improve energy efficiency through the use of optical radiation recovery. Semiconductor thermoelectric devices using optical phenomena in conjunction with the Peltier effect allow a wide range of energy-efficient components of radio electronic equipment to be realised, both for discrete electronics and for microsystem techniques. Systems for obtaining ultra-low temperatures in order to achieve superconductivity are of particular value. 

The continuous-wave passive mode-locking operation of a diode-pumped mixed Nd:Lu0.5Y0.5VO4 laser

International Nuclear Information System (INIS)

Huang, H-T; Xu, J-L; He, J-L; Zhang, S-Y; Xu, J-Q; Zhao, B

2011-01-01

We reported a continuous-wave (CW) passively mode-locked Nd:Lu 0.5 Y 0.5 VO 4 laser at 1064 nm. A partially reflective semiconductor saturable absorber mirror was exploited in the Z-typed resonator. The Nd:Lu 0.5 Y 0.5 VO 4 laser generated CW mode-locked pulses with an average output power of 860 mW, a repetition rate of 53.7 MHz, and a pulse duration of 8.7 ps

The fabrication of carbon nanotube field-effect transistors with semiconductors as the source and drain contact materials.

Science.gov (United States)

Xiao, Z; Camino, F E

2009-04-01

Sb(2)Te(3) and Bi(2)Te(2)Se semiconductor materials were used as the source and drain contact materials in the fabrication of carbon nanotube field-effect transistors (CNTFETs). Ultra-purified single-walled carbon nanotubes (SWCNTs) were ultrasonically dispersed in N-methyl pyrrolidone solvent. Dielectrophoresis was used to deposit and align SWCNTs for fabrication of CNTFETs. The Sb(2)Te(3)- and Bi(2)Te(2)Se-based CNTFETs demonstrate p-type metal-oxide-silicon-like I-V curves with high on/off drain-source current ratio at large drain-source voltages and good saturation of drain-source current with increasing drain-source voltage. The fabrication process developed is novel and has general meaning, and could be used for the fabrication of SWCNT-based integrated devices and systems with semiconductor contact materials.

Black phosphorus saturable absorber for ultrafast mode-locked pulse laser via evanescent field interaction

Energy Technology Data Exchange (ETDEWEB)

Park, Kichul; Lee, Young Tack; Choi, Won-Kook; Song, Yong-Won [Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Lee, Junsu; Lee, Ju Han [School of Electrical and Computer Engineering, University of Seoul (Korea, Republic of)

2015-12-15

Black phosphorus, or BP, has found a lot of applications in recent years including photonics. The most recent studies have shown that the material has an excellent optical nonlinearity useful in many areas, one of which is in saturable absorption for passive mode-locking. A direct interaction scheme for mode-locking, however, has a potential to optically cause permanent damage to the already delicate material. Evanescent field interaction scheme has already been proven to be a useful method to prevent such danger for other 2-dimensional nanomaterials. In this report, we have utilized the evanescent field interaction to demonstrate that the optical nonlinear characteristics of BP is sufficiently strong to use in such an indirect interaction method. The successful demonstration of the passive mode-locking operation has generated pulses with the pulse duration, repetition rate, and time bandwidth product of 2.18 ps, 15.59 MHz, and 0.336, respectively. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Electronic properties of semiconductor heterostructures

International Nuclear Information System (INIS)

Einevoll, G.T.

1991-02-01

Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

Organic semiconductor crystals.

Science.gov (United States)

Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

2018-01-22

Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

Compact semiconductor lasers

CERN Document Server

Yu, Siyuan; Lourtioz, Jean-Michel

2014-01-01

This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

Semiconductor spintronics

CERN Document Server

Xia, Jianbai; Chang, Kai

2012-01-01

Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

Pump-probe spectroscopy of spin-injection dynamics in double quantum wells of diluted magnetic semiconductor

International Nuclear Information System (INIS)

Nishibayashi, K.; Aoshima, I.; Souma, I.; Murayama, A.; Oka, Y.

2006-01-01

Dynamics of spin injection has been investigated in a double quantum well (DQW) composed of a diluted magnetic semiconductor by the pump-probe transient absorption spectroscopy in magnetic field. The DQW consists of a non-magnetic well (NMW) of CdTe and a magnetic well (MW) of Cd 0.92 Mn 0.08 Te. The MW shows a transient absorption saturation in the exciton band for more than 200 ps after the optical pumping, while the exciton photoluminescence does not arise from the MW. In the NMW, the circular polarization degree of the transient absorption saturation shows an increase with increasing time. The results are interpreted by the individual tunneling of spin-polarized electrons and holes from the MW to the NMW with different tunneling times. Depolarization processes of the carrier spins in the MW and the NMW are also discussed

Method of doping a semiconductor

International Nuclear Information System (INIS)

Yang, C.Y.; Rapp, R.A.

1983-01-01

A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

Three-dimensional reciprocal space profile of an individual nanocrystallite inside a thin-film solar cell absorber layer

International Nuclear Information System (INIS)

Slobodskyy, Taras; Schroth, Philip; Minkevich, Andrey; Grigoriev, Daniil; Fohtung, Edwin; Riotte, Markus; Baumbach, Tilo; Powalla, Michael; Lemmer, Uli; Slobodskyy, Anatoliy

2013-01-01

The strain profile of an individual Cu(In,Ga)Se 2 nanocrystallite in a solar cell absorber layer is accessed using synchrotron radiation. We find that the investigated crystallite is inhomogeneously strained. The strain is most likely produced by a combination of intergranular strain and composition variations in nanocrystals inside the polycrystalline semiconductor film and carries information about the intercrystalline interaction. The measurements are made nondestructively and without additional sample preparation or x-ray beam nanofocusing. This is the first step towards measurements of strain profiles of individual crystallites inside a working solar cell. (paper)

Li(Zn,Co,MnAs: A bulk form diluted magnetic semiconductor with Co and Mn co-doping at Zn sites

Directory of Open Access Journals (Sweden)

Bijuan Chen

2016-11-01

Full Text Available We report the synthesis and characterization of a series of bulk forms of diluted magnetic semiconductors Li(Zn1-x-yCoxMnyAs with a crystal structure close to that of III-V diluted magnetic semiconductor (Ga,MnAs. No ferromagnetic order occurs with single (Zn,Co or (Zn, Mn substitution in the parent compound LiZnAs. Only with co-doped Co and Mn ferromagnetic ordering can occur at the Curie temperature ∼40 K. The maximum saturation moment of the this system reached to 2.17μB/Mn, which is comparable to that of Li (Zn,MnAs. It is the first time that a diluted magnetic semiconductor with co-doping Co and Mn into Zn sites is achieved in “111” LiZnAs system, which could be utilized to investigate the basic science of ferromagnetism in diluted magnetic semiconductors. In addition, ferromagnetic Li(Zn,Co,MnAs, antiferromagnetic LiMnAs, and superconducting LiFeAs share square lattice at As layers, which may enable the development of novel heterojunction devices in the future.

Ultra-broadband and wide-angle perfect absorber based on composite metal-semiconductor grating

Science.gov (United States)

Li, Xu; Wang, Zongpeng; Hou, Yumin

2018-01-01

In this letter, we present an ultra-broadband and wide-angle perfect absorber based on composite Ge-Ni grating. Near perfect absorption above 90% is achieved in a wide frequency range from 150 nm to 4200 nm, which covers almost the full spectrum of solar radiation. The absorption keeps robust in a wide range of incident angle from 0º to 60º. The upper triangle Ge grating works as an antireflection coating. The lower Ni grating works as a reflector and an effective energy trapper. The guided modes inside Ge grating are excited due to reflection of the lower Ni grating surface. In longer wavelength band, gap surface plasmons (GSPs) in the Ni grating are excited and couple with the guided modes inside the Ge grating. The coupled modes extend the perfect absorption band to the near-infrared region (150 nm-4200 nm). This design has potential application in photovoltaic devices and thermal emitters.

Aperiodic-metamaterial-based absorber

Directory of Open Access Journals (Sweden)

Quanlong Yang

2017-09-01

Full Text Available The periodic-metamaterial-based perfect absorber has been studied broadly. Conversely, if the unit cell in the metamaterial-based absorber is arranged aperiodically (aperiodic-metamaterial-based absorber, how does it perform? Inspired by this, here we present a systematic study of the aperiodic-metamaterial-based absorber. By investigating the response of metamaterial absorbers based on periodic, Fibonacci, Thue-Morse, and quasicrystal lattices, we found that aperiodic-metamaterial-based absorbers could display similar absorption behaviors as the periodic one in one hand. However, their absorption behaviors show different tendency depending on the thicknesses of the spacer. Further studies on the angle and polarization dependence of the absorption behavior are also presented.

In-vivo quantitative measurement of tissue oxygen saturation of human webbing using a transmission type continuous-wave near-infrared spectroscopy

Science.gov (United States)

Aizimu, Tuerxun; Adachi, Makoto; Nakano, Kazuya; Ohnishi, Takashi; Nakaguchi, Toshiya; Takahashi, Nozomi; Nakada, Taka-aki; Oda, Shigeto; Haneishi, Hideaki

2018-02-01

Near-infrared spectroscopy (NIRS) is a noninvasive method for monitoring tissue oxygen saturation (StO2). Many commercial NIRS devices are presently available. However, the precision of those devices is relatively poor because they are using the reflectance-model with which it is difficult to obtain the blood volume and other unchanged components of the tissue. Human webbing is a thin part of the hand and suitable to measure spectral transmittance. In this paper, we present a method for measuring StO2 of human webbing from a transmissive continuous-wave nearinfrared spectroscopy (CW-NIRS) data. The method is based on the modified Beer-Lambert law (MBL) and it consists of two steps. In the first step, we give a pressure to the upstream region of the measurement point to perturb the concentration of deoxy- and oxy-hemoglobin as remaining the other components and measure the spectral signals. From the measured data, spectral absorbance due to the components other than hemoglobin is calculated. In the second step, spectral measurement is performed at arbitrary time instance and the spectral absorbance obtained in the step 1 is subtracted from the measured absorbance. The tissue oxygen saturation (StO2) is estimated from the remained data. The method was evaluated on an arterial occlusion test (AOT) and a venous occlusion test (VOT). In the evaluation experiment, we confirmed that reasonable values of StO2 were obtained by the proposed method.

Absorbing rods for nuclear fast neutron reactor absorbing assembly

International Nuclear Information System (INIS)

Aji, M.; Ballagny, A.; Haze, R.

1986-01-01

The invention proposes a neutron absorber rod for neutron absorber assembly of a fast neutron reactor. The assembly comprises a bundle of vertical rods, each one comprising a stack of pellets made of a neutron absorber material contained in a long metallic casing with a certain radial play with regard to this casing; this casing includes traps for splinters from the pellets which may appear during reactor operation, at the level of contact between adjacent pellets. The present invention prevents the casing from rupture involved by the disintegration of the pellets producing pieces of boron carbide of high hardness [fr

Improvement of wettability and absorbancy of textile using atmospheric pressure dielectric barrier discharge

Science.gov (United States)

Ghimire, Bhagirath; Subedi, Deepak Prasad; Khanal, Raju

2017-08-01

In this study, cotton textile samples, commonly used in making quilt covers were subjected to atmospheric pressure dielectric barrier discharge treatment to study their surface wettability and absorbancy. Samples were treated in the discharge using a rotatory mechanism and the effects of plasma treatment were examined by contact angle measurement and weight measurement. Air plasma treatment was successful in incorporating hydrophilic functional groups on the textile surface due to which wettability as well as absorbancy immediately after the treatment were highly improved. Effects of plasma treatment started to appear only after 20 cycles (9 mins) and got saturated after 24 cycles (10.8 mins) of treatment. The contact angle reduced from 137 ° (untreated sample) to a value less than 30 ° while absorbancy increased by more than two times as compared to untreated sample. Also, the aging behavior of the plasma treated samples were studied for about a week after plasma treatment. It was observed that the induced oxygen containing groups re-oriented into the bulk of the material during their storage in the environment due to which initial properties of the samples recovered gradually. Our results indicate that low temperature plasma can be successfully applied to modify the properties of textiles and textile industries could utilize this by standardization.

Methods for absorbing neutrons

Science.gov (United States)

Guillen, Donna P [Idaho Falls, ID; Longhurst, Glen R [Idaho Falls, ID; Porter, Douglas L [Idaho Falls, ID; Parry, James R [Idaho Falls, ID

2012-07-24

A conduction cooled neutron absorber may include a metal matrix composite that comprises a metal having a thermal neutron cross-section of at least about 50 barns and a metal having a thermal conductivity of at least about 1 W/cmK. Apparatus for providing a neutron flux having a high fast-to-thermal neutron ratio may include a source of neutrons that produces fast neutrons and thermal neutrons. A neutron absorber positioned adjacent the neutron source absorbs at least some of the thermal neutrons so that a region adjacent the neutron absorber has a fast-to-thermal neutron ratio of at least about 15. A coolant in thermal contact with the neutron absorber removes heat from the neutron absorber.

A mode-locked external-cavity quantum-dot laser with a variable repetition rate

International Nuclear Information System (INIS)

Wu Jian; Jin Peng; Li Xin-Kun; Wei Heng; Wu Yan-Hua; Wang Fei-Fei; Chen Hong-Mei; Wu Ju; Wang Zhan-Guo

2013-01-01

A mode-locked external-cavity laser emitting at 1.17-μm wavelength using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. By changing the external-cavity length, repetition rates of 854, 912, and 969 MHz are achieved respectively. The narrowest −3-dB radio-frequency linewidth obtained is 38 kHz, indicating that the laser is under stable mode-locking operation. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Synthesis and characterizations of Cu2ZnSnS4 nanoparticles/carbon nanotube composite as an efficient absorber material for solar cell application

Science.gov (United States)

Das, S.; Sa, K.; Alam, I.; Mahakul, P. C.; Raiguru, J.; Subramanyam, B. V. R. S.; Mahanandia, P.

2018-05-01

In this energy crisis era, the urgent calls for clean energy converter realizes the importance of photovoltaic device, which offers the highest probability of delivering a sustainable way of harvesting solar energy. The active absorber layer has its significance towards the performance of photovoltaic device by absorbing solar light and creating electron-hole pair inside layer. Being a direct p-type semiconductor, Cu2ZnSnS4 generally referred as CZTS has emerged as potential absorber towards photovoltaics application in recent decades as it offers the advantage of tunable band gap near optimal region ˜1.45-1.65 eV favorably match the solar spectrum and a high absorption coefficient ˜104 cm-1. The further improvement in the performance of CZTS based photovoltaics has involved the use of carbon nanotubes (CNTs). Semiconductors hybridized with carbonaceous materials (CNTs) have been the center of attraction in the scientific community with beneficial contribution in enhancing optoelectronic properties. The incorporation of CNTs shows effectiveness in charge carrier transfer pathways which ultimately could enhance the photo conversion efficiency (PCE) of photovoltaic device cell (PVC). Here, a facile hydrothermal one-pot synthesis of CZTS nanoparticles and MWCNTs composite towards photovoltaics application is reported. The phase and structural analysis of CZTS nanoparticles as well as CZTS/MWCNTs composite is done by XRD. From FERSEM and TEM (LRTEM & HRTEM) analysis the CZTS nanoparticles decorated over the surface of MWCNTs is confirmed. The optical band gap of CZTS/MWCNTs composite is estimated to be 1.62 eV from UV-Visible spectra.

Neutron absorbed dose in a pacemaker CMOS

Energy Technology Data Exchange (ETDEWEB)

Borja H, C. G.; Guzman G, K. A.; Valero L, C. Y.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

2011-11-15

The absorbed dose due to neutrons by a Complementary Metal Oxide Semiconductor (CMOS) has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes a patient that must be treated by radiotherapy with a linear accelerator; the pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. When the Linac is working in Bremsstrahlung mode an undesirable neutron field is produced due to photoneutron reactions; these neutrons could damage the CMOS putting the patient at risk during the radiotherapy treatment. In order to estimate the neutron dose in the CMOS a Monte Carlo calculation was carried out where a full radiotherapy vault room was modeled with a W-made spherical shell in whose center was located the source term of photoneutrons produced by a Linac head operating in Bremsstrahlung mode at 18 MV. In the calculations a phantom made of tissue equivalent was modeled while a beam of photoneutrons was applied on the phantom prostatic region using a field of 10 x 10 cm{sup 2}. During simulation neutrons were isotropically transported from the Linac head to the phantom chest, here a 1 {theta} x 1 cm{sup 2} cylinder made of polystyrene was modeled as the CMOS, where the neutron spectrum and the absorbed dose were estimated. Main damages to CMOS are by protons produced during neutron collisions protective cover made of H-rich materials, here the neutron spectrum that reach the CMOS was calculated showing a small peak around 0.1 MeV and a larger peak in the thermal region, both connected through epithermal neutrons. (Author)

Semiconductor lasers stability, instability and chaos

CERN Document Server

Ohtsubo, Junji

2017-01-01

This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

EDITORIAL: Focus on Dilute Magnetic Semiconductors FOCUS ON DILUTE MAGNETIC SEMICONDUCTORS

Science.gov (United States)

Chambers, Scott A.; Gallagher, Bryan

2008-05-01

-orbit coupling. They have also led to the demonstration of a wide range of novel phenomena including some, like tunneling anisotropic magnetoresistance, which have subsequently been achieved in metal ferromagnetic systems. However despite considerable effort over many years the maximum Curie point achieved in (Ga,Mn)As is still less than 200 K. So unless some major new breakthrough is achieved these materials are unlikely to be of use for practical spin electronics technologies. In 2000, Dietl et al [1] published a seminal paper in which mean field theory was used to predict which of the common diamagnetic semiconductors would exhibit a Curie point above ambient if doped with 5 at.% Mn and a hole concentration of 3.5 × 1020 cm-3. Of the many host semiconductors simulated, only ZnO and GaN were predicted to exhibit a critical temperature in excess of 300 K. Since 2000, high-Tc DMS research has proliferated in both experimental and theoretical arenas. Many papers have been published containing claims of new DMS materials based largely on limited film growth, powder diffraction, and magnetometry. In these papers, a film which exhibits a hysteretic SQUID or VSM loop at 300 K and phase purity with only the host semiconductor detected by XRD are often claimed to be true ferromagnetic DMSs. Many of these papers are flawed because the criteria for a well-defined DMS are much more extensive. These include: (i) a random dopant distribution, (ii) a well-known and preferably unique charge state and preferentially a unique local structural environment for the dopant, (iii) a demonstrated coupling of the dopant spin to the host band structure, leading to spin polarization of the majority carriers, and (iv) a rational dependence of the saturation magnetization and Curie point on the magnetic dopant and carrier concentrations. Implicit in this list is that trivial causes of ferromagnetism, such as magnetic contamination and magnetic secondary phase formation, are eliminated. Yet, in many

Terahertz semiconductor nonlinear optics

DEFF Research Database (Denmark)

Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

2013-01-01

In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

Defects in semiconductors

CERN Document Server

Romano, Lucia; Jagadish, Chennupati

2015-01-01

This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

Selective, electrochemical etching of a semiconductor

Science.gov (United States)

Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

2018-03-20

Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

AlN metal-semiconductor field-effect transistors using Si-ion implantation

Science.gov (United States)

Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomás

2018-04-01

We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230 °C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250 °C. The off-state breakdown voltage is 2370 V for drain-to-gate spacing of 25 µm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.

Electronic structure of semiconductor interfaces

Energy Technology Data Exchange (ETDEWEB)

Herman, F

1983-02-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

Electronic structure of semiconductor interfaces

International Nuclear Information System (INIS)

Herman, F.

1983-01-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

Dynamic localization and negative absolute conductance in terahertz driven semiconductor superlattices

International Nuclear Information System (INIS)

Keay, B.J.; Allen, S.J.; Campman, K.L.

1995-01-01

We report the first observation of Negative Absolute Conductance (NAC), dynamic localization and multiphoton stimulated emission assisted tunneling in terahertz driven semiconductor superlattices. Theories predicting NAC in semiconductor superlattices subjected to AC electric fields have existed for twenty years, but have never been verified experimentally. Most theories are based upon semiclassical arguments and are only valid for superlattices in the miniband or coherent tunneling regime. We are not aware of models predicting NAC in superlattices in the sequential tunneling regime, although there has been recent theoretical work on double-barrier structures. Perhaps the most remarkable result is found in the power dependence of the current-voltage (I-V) characteristics near zero DC bias. As the laser power is increased the current decreases towards zero and then becomes negative. This result implies that the electrons are absorbing energy from the laser field, producing a net current in the direction opposite to the applied voltage. NAC around zero DC bias is a particularly surprising observation considering photon-assisted tunneling is not expected to be observable between the ground states of neighboring quantum wells in a semiconductor superlattice. Contrary to this believe our results are most readily attributable to photon absorption and multiphoton emission between ground states of neighboring wells. The I-V characteristics measured in the presence of terahertz radiation at low DC bias also contain steps and plateaus analogous to photon-assisted steps observed in superconducting junctions. As many as three steps have been clearly resolved corresponding to stimulated emission into the terahertz field by a three-photon process

Transport in coherently absorbing or amplifying media

International Nuclear Information System (INIS)

Sen, A.K.

1995-11-01

We study electronic transport in a one-dimensional ordered chain in the presence of either absorption or amplification at each site (the site-potential having an imaginary positive or negative part) within a single-band tightbinding Hamiltonian. The spectrum in either case for the isolated (closed) quantum system is found to become broader compared to the regular Bloch case where there is no absorption or amplification at any site. Interestingly for the transport through an infinitely long ordered chain (open quantum system), the reflectance saturates to a value greater (lesser) than unity in the amplifying (absorbing) case and the transmittance decays to zero in either case. This fact implies that the transmittance does not grow indefinitely even for an ordered, amplifying (active or lasing) medium and that it is not necessary to have any disorder or interaction induced confining mechanism on the transmitted wave, so as to achieve an amplification in the backscattered wave. (author). 8 refs, 2 figs

Physical principles of semiconductor detectors

International Nuclear Information System (INIS)

Micek, S.L.

1979-01-01

The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

Effect of the bio-absorbent on the microwave absorption property of the flaky CIPs/rubber absorbers

Energy Technology Data Exchange (ETDEWEB)

Cheng, Yang; Xu, Yonggang, E-mail: xuyonggang221@163.com; Cai, Jun; Yuan, Liming; Zhang, Deyuan

2015-09-01

Microwave absorbing composites filled with flaky carbonyl iron particles (CIPs) and the bio-absorbent were prepared by using a two-roll mixer and a vulcanizing machine. The electromagnetic (EM) parameters were measured by a vector network analyzer and the reflection loss (RL) was measured by the arch method in the frequency range of 1–4 GHz. The uniform dispersion of the absorbents was verified by comparing the calculated RL with the measured one. The results confirm that as the bio-absorbent was added, the permittivity was increased due to the volume content of absorbents, and the permeability was enlarged owing to the volume content of CIPs and interactions between the two absorbents. The composite filled with bio-absorbents achieved an excellent absorption property at a thickness of 1 mm (minimum RL reaches −7.8 dB), and as the RL was less than −10 dB the absorption band was widest (2.1–3.8 GHz) at a thickness of 2 mm. Therefore, the bio-absorbent is a promising additive candidate on fabricating microwave absorbing composites with a thinner thickness and wider absorption band. - Graphical abstract: Morphology of composites filled with flaky CIPs and the bio-absorbent. The enhancement of bio-absorbent on the electromagnetic absorption property of composites filled with flaky carbonyl iron particles (CIPs) is attributed to the interaction of the two absorbents. The volume content of the FCMPs with the larger shape CIPs play an important role in this effects, the composites filled with irons and bio-absorbents can achieve wider-band and thinner-thickness absorbing materials. - Highlights: • Absorbers filled with bio-absorbents and CIPs was fabricated. • Bio-absorbents enhanced the permittivity and permeability of the composites. • The absorbent interactions play a key role in the enhancement mechanism. • Bio-absorbents enhanced the composite RL in 1–4 GHz.

Semiconductors data handbook

CERN Document Server

Madelung, Otfried

2004-01-01

This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

Gluon saturation in a saturated environment

International Nuclear Information System (INIS)

Kopeliovich, B. Z.; Potashnikova, I. K.; Schmidt, Ivan

2011-01-01

A bootstrap equation for self-quenched gluon shadowing leads to a reduced magnitude of broadening for partons propagating through a nucleus. Saturation of small-x gluons in a nucleus, which has the form of transverse momentum broadening of projectile gluons in pA collisions in the nuclear rest frame, leads to a modification of the parton distribution functions in the beam compared with pp collisions. In nucleus-nucleus collisions all participating nucleons acquire enhanced gluon density at small x, which boosts further the saturation scale. Solution of the reciprocity equations for central collisions of two heavy nuclei demonstrate a significant, up to several times, enhancement of Q sA 2 , in AA compared with pA collisions.

Chalcopyrite semiconductors for quantum well solar cells

Energy Technology Data Exchange (ETDEWEB)

Afshar, Maziar; Sadewasser, Sascha; Albert, Juergen; Lehmann, Sebastian; Abou-Ras, Daniel; Lux-Steiner, Martha C. [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Berlin (Germany); Marron, David Fuertes [Instituto de Energia Solar - ETSIT, Universidad Politecnica de Madrid, Ciudad Universitaria s.n., 28040 Madrid (Spain); Rockett, Angus A. [Department of Materials Science and Engineering, University of Illinois, 1304 W. Green Street, Urbana, IL 61801 (United States); Raesaenen, Esa [Nanoscience Center, Department of Physics University of Jyvaeskylae, FI-40014 Jyvaeskylae (Finland)

2011-11-15

The possibilities of using highly absorbing chalcopyrite semiconductors of the type Cu(In,Ga)Se{sub 2} in a quantum well solar cell structure are explored. Thin alternating layers of 50 nm CuInSe{sub 2} and CuGaSe{sub 2} were grown epitaxially on a GaAs(100) substrate. The optical properties of a resulting structure of three layers indicate charge carrier confinement in the low band gap CuInSe{sub 2} layer. By compositional analysis interdiffusion of In and Ga at the interfaces was found. The compositional profile was converted into a conduction-band diagram, for which the quantization of energy levels was numerically confirmed using the effective-mass approximation. The results provide a promising basis for the future development of chalcopyrite-type quantum well structures and their application, i.e. in quantum well solar cells. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Intensity Correlation Analysis on Blue-Violet FemtosecondPulses from a Dispersion-Compensated GaInN Mode-LockedSemiconductor Laser Diode

Directory of Open Access Journals (Sweden)

Shunsuke Kono

2015-09-01

Full Text Available We investigated the spectral and temporal characteristics of blue-violetfemtosecond optical pulses generated by a passively mode-locked GaInN laser diode ina dispersion-compensated external cavity. The output optical pulses at 400 nm wereanalyzed in detail by intensity auto- and cross-correlation measurements using secondharmonic generation on the surface of a β-BaB2O4 crystal. The obtained results clarifiedwavelength-dependent chirp characteristics of the optical pulses. The analysis suggestedthat a large frequency shift due to saturation in the saturable absorber and gain sectionsplayed an important role in the generation of femtosecond optical pulses.

Saturable Absorption and Modulation Characteristics of Laser with Graphene Oxide Spin Coated on ITO Substrate

OpenAIRE

Li, Xin; Zhang, Haikun; Wang, Peiji; Li, Guiqiu; Zhao, Shengzhi; Wang, Jing; Chen, Lijuan

2014-01-01

The graphene oxide (GO) thin film has been obtained by mixture of GO spin coated on substrate of indium tin oxide (ITO). The experiment has shown that continuous-wave laser is modulated when the graphene oxide saturable absorber (GO-SA) is employed in the 1064 nm laser cavity. The shortest pulse width is 108 ns at the pump power of 5.04 W. Other output laser characteristics, such as the threshold pump power, the repetition rate, and the peak power, have also been measured. The results have de...

Lipid order, saturation and surface property relationships: a study of human meibum saturation.

Science.gov (United States)

Mudgil, Poonam; Borchman, Douglas; Yappert, Marta C; Duran, Diana; Cox, Gregory W; Smith, Ryan J; Bhola, Rahul; Dennis, Gary R; Whitehall, John S

2013-11-01

Tear film stability decreases with age however the cause(s) of the instability are speculative. Perhaps the more saturated meibum from infants may contribute to tear film stability. The meibum lipid phase transition temperature and lipid hydrocarbon chain order at physiological temperature (33 °C) decrease with increasing age. It is reasonable that stronger lipid-lipid interactions could stabilize the tear film since these interactions must be broken for tear break up to occur. In this study, meibum from a pool of adult donors was saturated catalytically. The influence of saturation on meibum hydrocarbon chain order was determined by infrared spectroscopy. Meibum is in an anhydrous state in the meibomian glands and on the surface of the eyelid. The influence of saturation on the surface properties of meibum was determined using Langmuir trough technology. Saturation of native human meibum did not change the minimum or maximum values of hydrocarbon chain order so at temperatures far above or below the phase transition of human meibum, saturation does not play a role in ordering or disordering the lipid hydrocarbon chains. Saturation did increase the phase transition temperature in human meibum by over 20 °C, a relatively high amount. Surface pressure-area studies showing the late take off and higher maximum surface pressure of saturated meibum compared to native meibum suggest that the saturated meibum film is quite molecularly ordered (stiff molecular arrangement) and elastic (molecules are able to rearrange during compression and expansion) compared with native meibum films which are more fluid agreeing with the infrared spectroscopic results of this study. In saturated meibum, the formation of compacted ordered islands of lipids above the surfactant layer would be expected to decrease the rate of evaporation compared to fluid and more loosely packed native meibum. Higher surface pressure observed with films of saturated meibum compared to native meibum

Compound Semiconductor Radiation Detectors

CERN Document Server

Owens, Alan

2012-01-01

Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

Optical orientation in ferromagnet/semiconductor hybrids

International Nuclear Information System (INIS)

Korenev, V L

2008-01-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

Optical orientation in ferromagnet/semiconductor hybrids

Science.gov (United States)

Korenev, V. L.

2008-11-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

Optical Orientation in Ferromagnet/Semiconductor Hybrids

OpenAIRE

Korenev, V. L.

2008-01-01

The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

EDITORIAL The 23rd Nordic Semiconductor Meeting The 23rd Nordic Semiconductor Meeting

Science.gov (United States)

Ólafsson, Sveinn; Sveinbjörnsson, Einar

2010-12-01

A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a topical issue of Physica Scripta. All of the papers in this topical issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This meeting of the 23rd Nordic Semiconductor community, NSM 2009, was held at Háskólatorg at the campus of the University of Iceland, Reykjavik, Iceland, 14-17 June 2009. Support was provided by the University of Iceland. Almost 50 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The meeting aim was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. Topics Theory and fundamental physics of semiconductors Emerging semiconductor technologies (for example III-V integration on Si, novel Si devices, graphene) Energy and semiconductors Optical phenomena and optical devices MEMS and sensors Program 14 June Registration 13:00-17:00 15 June Meeting program 09:30-17:00 and Poster Session I 16 June Meeting program 09:30-17:00 and Poster Session II 17 June Excursion and dinner

Absorbant materials

International Nuclear Information System (INIS)

Quetier, Monique.

1978-11-01

Absorbants play a very important part in the nuclear industry. They serve for the control, shut-down and neutron shielding of reactors and increase the capacity of spent fuel storage pools and of special transport containers. This paper surveys the usual absorbant materials, means of obtainment, their essential characteristics relating to their use and their behaviour under neutron irradiation [fr

Time-of-flight neutron diffraction investigation of temperature factors in the Zn blende semiconductor InP

International Nuclear Information System (INIS)

Ferrari, C.; Bocchi, C.; Fornari, R.; Moze, O.; Wilson, C.C.

1992-01-01

A structural investigation of the Zn blende structure semiconductor InP has been carried out using the single crystal diffractometer SXD at the pulsed neutron facility ISIS. The ability to measure structure factors accurately at large Q values even with highly absorbing materials such as InP is demonstrated. Measurements were performed on a single crystal of InP at 293, 100 and 50 K with the crystallographic axis mounted perpendicular to the scattering plane. This enabled collection of (hhl) reflections up to a maximum with Miller indices (10, 10, 8). (orig.)

Advancing semiconductor-electrocatalyst systems: application of surface transformation films and nanosphere lithography.

Science.gov (United States)

Brinkert, Katharina; Richter, Matthias H; Akay, Ömer; Giersig, Michael; Fountaine, Katherine T; Lewerenz, Hans-Joachim

2018-05-24

Photoelectrochemical (PEC) cells offer the possibility of carbon-neutral solar fuel production through artificial photosynthesis. The pursued design involves technologically advanced III-V semiconductor absorbers coupled via an interfacial film to an electrocatalyst layer. These systems have been prepared by in situ surface transformations in electrochemical environments. High activity nanostructured electrocatalysts are required for an efficiently operating cell, optimized in their optical and electrical properties. We demonstrate that shadow nanosphere lithography (SNL) is an auspicious tool to systematically create three-dimensional electrocatalyst nanostructures on the semiconductor photoelectrode through controlling their morphology and optical properties. First results are demonstrated by means of the photoelectrochemical production of hydrogen on p-type InP photocathodes where hitherto applied photoelectrodeposition and SNL-deposited Rh electrocatalysts are compared based on their J-V and spectroscopic behavior. We show that smaller polystyrene particle masks achieve higher defect nanostructures of rhodium on the photoelectrode which leads to a higher catalytic activity and larger short circuit currents. Structural analyses including HRSEM and the analysis of the photoelectrode surface composition by using photoelectron spectroscopy support and complement the photoelectrochemical observations. The optical performance is further compared to theoretical models of the nanostructured photoelectrodes on light scattering and propagation.

Defects in semiconductors

International Nuclear Information System (INIS)

Pimentel, C.A.F.

1983-01-01

Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

Determination of saturation functions and wettability for chalk based on measured fluid saturations

Energy Technology Data Exchange (ETDEWEB)

Olsen, D.; Bech, N.; Moeller Nielsen, C.

1998-08-01

The end effect of displacement experiments on low permeable porous media is used for determination of relative permeability functions and capillary pressure functions. Saturation functions for a drainage process are determined from a primary drainage experiment. A reversal of the flooding direction creates an intrinsic imbibition process in the sample, which enables determination if imbibition saturation functions. The saturation functions are determined by a parameter estimation technique. Scanning effects are modelled by the method of Killough. Saturation profiles are determined by NMR. (au)

Absorber for terahertz radiation management

Science.gov (United States)

Biallas, George Herman; Apeldoorn, Cornelis; Williams, Gwyn P.; Benson, Stephen V.; Shinn, Michelle D.; Heckman, John D.

2015-12-08

A method and apparatus for minimizing the degradation of power in a free electron laser (FEL) generating terahertz (THz) radiation. The method includes inserting an absorber ring in the FEL beam path for absorbing any irregular THz radiation and thus minimizes the degradation of downstream optics and the resulting degradation of the FEL output power. The absorber ring includes an upstream side, a downstream side, and a plurality of wedges spaced radially around the absorber ring. The wedges form a scallop-like feature on the innermost edges of the absorber ring that acts as an apodizer, stopping diffractive focusing of the THz radiation that is not intercepted by the absorber. Spacing between the scallop-like features and the shape of the features approximates the Bartlett apodization function. The absorber ring provides a smooth intensity distribution, rather than one that is peaked on-center, thereby eliminating minor distortion downstream of the absorber.

Semiconductor Laser Measurements Laboratory

Data.gov (United States)

Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

Metal semiconductor contacts and devices

CERN Document Server

Cohen, Simon S; Einspruch, Norman G

1986-01-01

VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

Handbook of luminescent semiconductor materials

CERN Document Server

Bergman, Leah

2011-01-01

Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

Reducing leakage current in semiconductor devices

Energy Technology Data Exchange (ETDEWEB)

Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

2018-03-06

A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

Quasi-continuously pumped passively mode-locked 2.4% doped Nd:YAG oscillator-amplifier system in a bounce geometry

Science.gov (United States)

Jelínek, Michal; Kubecek, Vaclav; Cech, Miroslav; Hirsl, Petr

2010-02-01

We report on oscillator-amplifier system based on two highly doped 2.4 at. % crystalline Czochralski grown Nd:YAG crystals in a diode pumped bounce geometry configuration under quasi-continuous pumping. The oscillator was passively mode-locked by the semiconductor saturable absorber in transmission mode. The output pulse train consisted of 5 pulses with total energy of 270 μJ and pulse duration of 75 ps. The output train from the oscillator was amplified to the energy of 1 mJ by single pass amplifier.

Semiconductor device comprising a pn-heterojunction

NARCIS (Netherlands)

2007-01-01

An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

Design and exploration of semiconductors from first principles: A review of recent advances

Science.gov (United States)

Oba, Fumiyasu; Kumagai, Yu

2018-06-01

Recent first-principles approaches to semiconductors are reviewed, with an emphasis on theoretical insight into emerging materials and in silico exploration of as-yet-unreported materials. As relevant theory and methodologies have developed, along with computer performance, it is now feasible to predict a variety of material properties ab initio at the practical level of accuracy required for detailed understanding and elaborate design of semiconductors; these material properties include (i) fundamental bulk properties such as band gaps, effective masses, dielectric constants, and optical absorption coefficients; (ii) the properties of point defects, including native defects, residual impurities, and dopants, such as donor, acceptor, and deep-trap levels, and formation energies, which determine the carrier type and density; and (iii) absolute and relative band positions, including ionization potentials and electron affinities at semiconductor surfaces, band offsets at heterointerfaces between dissimilar semiconductors, and Schottky barrier heights at metal–semiconductor interfaces, which are often discussed systematically using band alignment or lineup diagrams. These predictions from first principles have made it possible to elucidate the characteristics of semiconductors used in industry, including group III–V compounds such as GaN, GaP, and GaAs and their alloys with related Al and In compounds; amorphous oxides, represented by In–Ga–Zn–O transparent conductive oxides (TCOs), represented by In2O3, SnO2, and ZnO; and photovoltaic absorber and buffer layer materials such as CdTe and CdS among group II–VI compounds and chalcopyrite CuInSe2, CuGaSe2, and CuIn1‑ x Ga x Se2 (CIGS) alloys, in addition to the prototypical elemental semiconductors Si and Ge. Semiconductors attracting renewed or emerging interest have also been investigated, for instance, divalent tin compounds, including SnO and SnS; wurtzite-derived ternary compounds such as ZnSnN2 and Cu

Depletion field focusing in semiconductors

NARCIS (Netherlands)

Prins, M.W.J.; Gelder, Van A.P.

1996-01-01

We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

Velocity overshoot decay mechanisms in compound semiconductor field-effect transistors with a submicron characteristic length

International Nuclear Information System (INIS)

Jyegal, Jang

2015-01-01

Velocity overshoot is a critically important nonstationary effect utilized for the enhanced performance of submicron field-effect devices fabricated with high-electron-mobility compound semiconductors. However, the physical mechanisms of velocity overshoot decay dynamics in the devices are not known in detail. Therefore, a numerical analysis is conducted typically for a submicron GaAs metal-semiconductor field-effect transistor in order to elucidate the physical mechanisms. It is found that there exist three different mechanisms, depending on device bias conditions. Specifically, at large drain biases corresponding to the saturation drain current (dc) region, the velocity overshoot suddenly begins to drop very sensitively due to the onset of a rapid decrease of the momentum relaxation time, not the mobility, arising from the effect of velocity-randomizing intervalley scattering. It then continues to drop rapidly and decays completely by severe mobility reduction due to intervalley scattering. On the other hand, at small drain biases corresponding to the linear dc region, the velocity overshoot suddenly begins to drop very sensitively due to the onset of a rapid increase of thermal energy diffusion by electrons in the channel of the gate. It then continues to drop rapidly for a certain channel distance due to the increasing thermal energy diffusion effect, and later completely decays by a sharply decreasing electric field. Moreover, at drain biases close to a dc saturation voltage, the mechanism is a mixture of the above two bias conditions. It is suggested that a large secondary-valley energy separation is essential to increase the performance of submicron devices

The effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors

International Nuclear Information System (INIS)

Zhao Jun-Qing; Ding Meng; Zhang Tian-You; Zhang Ning-Yu; Pang Yan-Tao; Ji Yan-Ju; Chen Ying; Wang Feng-Xiang; Fu Gang

2012-01-01

We investigated the effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors. A Lorentz-type magnetoresistance is obtained from spin-orbit coupling-dependent spin precession under the condition of a space-charge-limited current. The magnetoresistance depends on the initial spin orientation of the electron with respect to the hole in electron—hole pairs, and the increasing spin-orbit coupling slows down the change in magnetoresistance with magnetic field. The field dependence, the sign and the saturation value of the magnetoresistance are composite effects of recombination and dissociation rate constants of singlet and triplet electron—hole pairs. The simulated magnetoresistance shows good consistency with the experimental results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Regularities in the Changes of Absorber Material Properties as a Function of Absorber Concentration; Regularite des Variations des Proprietes des Substances Absorbantes en Fonction de la Concentration de l'Absorbant; Zakonomernosti izmeneniya svojstv poglashchayushchikh materialov v zavisimosti ot kontsentratsii poglotitelya; Leyes de Variacion de las Propiedades de los Materiales Absorbentes en Funcion de la Concentracion del Absorbente

Energy Technology Data Exchange (ETDEWEB)

Portnoj, K. I.

1964-06-15

The paper presents regularities of the change in mechanical and heat-physical properties as well as in absorption capability as a function of absorber concentration for thermal and intermediate reactors. The thermal conductivity and the thermal expansion coefficient of absorber alloys containing boron and rare-earth element oxides is reduced with an increase of absorber concentration. Alloys with rare-earth element oxides have a linear law of the thermal expansion coefficient change, while for boron containing alloys this additive law of changes of properties is disturbed. This is caused by formation under high temperatures of boride phases with various crystal lattices. It is shown in the paper that absorption capability, being a function of absorber concentration, is changed along a curve with saturation and depends on the neutron spectrum. A hypothesis of the author on formation of absorption capability maximum under mutual alloying of absorbers is set forth. The hypothesis has got a wide experimental confirmation on a large number of metal and non-metal absorber system compositions in thermal and intermediate reactors. (author) [French] Le memoire expose la regularite des variations des proprietes mecaniques et thermiques ainsi que du pouvoir absorbant en fonction de la concentration de l'absorbant dans les reacteurs a neutrons thermiques et intermediaires. La conductibilite thermique et le coefficient de dilatation thermique des combinaisons absorbantes contenant du bore et des oxydes de terres rares diminuent a mesure qu'augmente la concentration de l'absorbant. Pour les combinaisons qui contiennent des oxydes de terres rares, la variation du coefficient de dilatation thermique est regie par une loi lineaire. Dans le cas des combinaisons contenant du bore, cette loi de variation des proprietes n'est pas rigoureusement applicable, du fait de la formation, a haute temperature, de phases 'borare' avec divers reseaux cristallins. Le memoire demontre que le

Semiconductor structure and recess formation etch technique

Energy Technology Data Exchange (ETDEWEB)

Lu, Bin; Sun, Min; Palacios, Tomas Apostol

2017-02-14

A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

Electrodes for Semiconductor Gas Sensors

Science.gov (United States)

Lee, Sung Pil

2017-01-01

The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

High-power terahertz optical pulse generation with a dual-wavelength harmonically mode-locked Yb:YAG laser

International Nuclear Information System (INIS)

Zhuang, W Z; Chang, M T; Su, K W; Huang, K F; Chen, Y F

2013-01-01

We report on high-power terahertz optical pulse generation with a dual-wavelength harmonically mode-locked Yb:YAG laser. A semiconductor saturable absorber mirror is developed to achieve synchronously mode-locked operation at two spectral bands centered at 1031.67 and 1049.42 nm with a pulse duration of 1.54 ps and a pulse repetition rate of 80.3 GHz. With a diamond heat spreader to improve the heat removal efficiency, the average output power can be up to 1.1 W at an absorbed pump power of 5.18 W. The autocorrelation traces reveal that the mode-locked pulse is modulated with a beat frequency of 4.92 THz and displays a modulation depth to be greater than 80%. (paper)

Mechanics of non-saturated soils

International Nuclear Information System (INIS)

Coussy, O.; Fleureau, J.M.

2002-01-01

This book presents the different ways to approach the mechanics of non saturated soils, from the physico-chemical aspect to the mechanical aspect, from the experiment to the theoretical modeling, from the laboratory to the workmanship, and from the microscopic scale to the macroscopic one. Content: water and its representation; experimental bases of the behaviour of non-saturated soils; transfer laws in non-saturated environment; energy approach of the behaviour of non-saturated soils; homogenization for the non-saturated soils; plasticity and hysteresis; dams and backfilling; elaborated barriers. (J.S.)

High short-circuit current density CdTe solar cells using all-electrodeposited semiconductors

Energy Technology Data Exchange (ETDEWEB)

Echendu, O.K., E-mail: oechendu@yahoo.com; Fauzi, F.; Weerasinghe, A.R.; Dharmadasa, I.M.

2014-04-01

CdS/CdTe and ZnS/CdTe n–n heterojunction solar cells have been fabricated using all-electrodeposited semiconductors. The best devices show remarkable high short-circuit current densities of 38.5 mAcm{sup −2} and 47.8 mAcm{sup −2}, open-circuit voltages of 630 mV and 646 mV and conversion efficiencies of 8.0% and 12.0% respectively. The major strength of these device structures lies in the combination of n–n heterojunction with a large Schottky barrier at the n-CdTe/metal back contact which provides the required band bending for the separation of photo-generated charge carriers. This is in addition to the use of a high quality n-type CdTe absorber layer with high electron mobility. The potential barrier heights estimated for these devices from the current–voltage characteristics exceed 1.09 eV and 1.13 eV for CdS/CdTe and ZnS/CdTe cells respectively. The diode rectification factors of both devices are in excess of four orders of magnitude with reverse saturation current densities of 1.0 × 10{sup −7} Acm{sup −2} and 4.0 × 10{sup −7} Acm{sup −2} respectively. These all-electrodeposited solar cell device structures are currently being studied and developed as an alternative to the well-known p–n junction structures which utilise chemical bath-deposited CdS. The preliminary material growth, device fabrication and assessment results are presented in this paper. - Highlights: • Two-electrode deposition. • High J{sub sc} Schottky barrier solar cells. • CdCl{sub 2} + CdF{sub 2} treatment.

Epitaxial growth of 100-μm thick M-type hexaferrite crystals on wide bandgap semiconductor GaN/Al{sub 2}O{sub 3} substrates

Energy Technology Data Exchange (ETDEWEB)

Hu, Bolin; Su, Zhijuan; Bennett, Steve; Chen, Yajie, E-mail: y.chen@neu.edu; Harris, Vincent G. [Center for Microwave Magnetic Materials and Integrated Circuits and Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States)

2014-05-07

Thick barium hexaferrite BaFe{sub 12}O{sub 19} (BaM) films having thicknesses of ∼100 μm were epitaxially grown on GaN/Al{sub 2}O{sub 3} substrates from a molten-salt solution by vaporizing the solvent. X-ray diffraction measurement verified the growth of BaM (001) textured growth of thick films. Saturation magnetization, 4πM{sub s}, was measured for as-grown films to be 4.6 ± 0.2 kG and ferromagnetic resonance measurements revealed a microwave linewidth of ∼100 Oe at X-band. Scanning electron microscopy indicated clear hexagonal crystals distributed on the semiconductor substrate. These results demonstrate feasibility of growing M-type hexaferrite crystal films on wide bandgap semiconductor substrates by using a simple powder melting method. It also presents a potential pathway for the integration of ferrite microwave passive devices with active semiconductor circuit elements creating system-on-a-wafer architectures.

DEM study of granular discharge rate through a vertical pipe with a bend outlet in small absorber sphere system

Energy Technology Data Exchange (ETDEWEB)

Li, Tianjin, E-mail: tjli@tsinghua.edu.cn; Zhang, He; Liu, Malin; Huang, Zhiyong; Bo, Hanliang; Dong, Yujie

2017-04-01

Highlights: • The work concerns granular flow in a vertical pipe with a bend. • Discharge rate fluctuation in vertical pipe are mainly from velocity fluctuation. • Steady discharge rate decreases rapidly and saturates with μ{sub s} increasing. • Steady discharge rate W{sub s} still obey the 5/2 power law of pipe internal diameter. • A correlation developed for steady discharge rate for this new geometry. - Abstract: Absorber sphere pneumatic conveying is a special application of pneumatic conveying technique in the pebble bed High Temperature Gas-Cooled Reactor (HTGR or HTR). Granular discharge through a vertical pipe with a bend outlet is one of the control modes to determine solid mass flowrate which is an important parameter for the design of absorber sphere pneumatic conveying. Granular discharge rate through the vertical pipe with a bend outlet in the small absorber sphere system are investigated by discrete element method simulation. The effect of geometry parameters on discharge rate, the discharge rate fluctuation in the vertical pipe, and the effect of friction on steady discharge rate (W{sub s}) are analyzed and discussed. The phenomena of discharge rate fluctuation in the vertical pipe are observed, which are mainly resulted from the evolution of the average downward granular velocity. The steady discharge rate decreases rapidly with sliding friction coefficient increasing from 0.125 to 0.5, and gradually saturates with the friction coefficient further increasing from 0.5 to 1. It is interesting that the linear relation between W{sub s}{sup 2/5} and pipe internal diameter D with zero intercept are found for the vertical pipe discharge with a bend outlet, which is different from the orifice discharge through a hopper or silo with none-zero intercept. A correlation similar to Beverloo’s correlation is developed to predict the steady discharge rate through the vertical pipe with a bend outlet. These results are helpful for the design of sphere

Metal-insulator-semiconductor photodetectors.

Science.gov (United States)

Lin, Chu-Hsuan; Liu, Chee Wee

2010-01-01

The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

Metal-Insulator-Semiconductor Photodetectors

Directory of Open Access Journals (Sweden)

Chu-Hsuan Lin

2010-09-01

Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

Self-assembling peptide semiconductors

Science.gov (United States)

Tao, Kai; Makam, Pandeeswar; Aizen, Ruth; Gazit, Ehud

2017-01-01

Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems. PMID:29146781

Semiconductors for plasmonics and metamaterials

DEFF Research Database (Denmark)

Naik, G.V.; Boltasseva, Alexandra

2010-01-01

Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

Fracto-mechanoluminescence induced by impulsive deformation of II-VI semiconductors.

Science.gov (United States)

Tiwari, Ratnesh; Dubey, Vikas; Ramrakhiani, Meera; Chandra, B P

2015-09-01

When II-VI semiconductors are fractured, initially the mechanoluminescence (ML) intensity increases with time, attains a maximum value Im at a time tm, at which the fracture is completed. After tm, the ML intensity decreases with time, Im increase linearly with the impact velocity v0 and IT initially increase linearly with v0 and then it attains a saturation value for a higher value of v0. For photoluminescence, the temperature dependence comes mainly from luminescence efficiency, ηo; however, for the ML excitation, there is an additional factor, rt dependent on temperature. During fracture, charged dislocations moving near the tip of moving cracks produce intense electric field, causes band bending. Consequently, tunneling of electrons from filled electron traps to the conduction band takes place, whereby the radiative electron-hole recombination give rise to the luminescence. In the proposed mechanism, expressions are derived for the rise, the time tm corresponding to the ML intensity versus time curve, the ML intensity Im corresponding to the peak of ML intensity versus time curve, the total fracto-mechanoluminescence (FML) intensity IT, and fast and slow decay of FML intensity of II-VI semiconductors. The FML plays a significant role in understanding the processes involved in biological detection, earthquake lights and mine failure. Copyright © 2015 John Wiley & Sons, Ltd.

Hydraulic shock absorbers

International Nuclear Information System (INIS)

Thatcher, G.; Davidson, D. F.

1984-01-01

A hydraulic shock absorber of the dash pot kind for use with electrically conducting liquid such as sodium, has magnet means for electro magnetically braking a stream of liquid discharged from the cylinder. The shock absorber finds use in a liquid metal cooled nuclear reactor for arresting control rods

Spin physics in semiconductors

CERN Document Server

2017-01-01

This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

Reflection measurements of microwave absorbers

Science.gov (United States)

Baker, Dirk E.; van der Neut, Cornelis A.

1988-12-01

A swept-frequency interferometer is described for making rapid, real-time assessments of localized inhomogeneities in planar microwave absorber panels. An aperture-matched exponential horn is used to reduce residual reflections in the system to about -37 dB. This residual reflection is adequate for making comparative measurements on planar absorber panels whose reflectivities usually fall in the -15 to -25 dB range. Reflectivity measurements on a variety of planar absorber panels show that multilayer Jaumann absorbers have the greatest inhomogeneity, while honeycomb absorbers generally have excellent homogeneity within a sheet and from sheet to sheet. The test setup is also used to measure the center frequencies of resonant absorbers. With directional couplers and aperture-matched exponential horns, the technique can be easily applied in the standard 2 to 40 GHz waveguide bands.

Oxide semiconductors

CERN Document Server

Svensson, Bengt G; Jagadish, Chennupati

2013-01-01

Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

Semiconductor statistics

CERN Document Server

Blakemore, J S

1962-01-01

Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

Carrier concentration induced ferromagnetism in semiconductors

International Nuclear Information System (INIS)

Story, T.

2007-01-01

In semiconductor spintronics the key materials issue concerns ferromagnetic semiconductors that would, in particular, permit an integration (in a single multilayer heterostructure) of standard electronic functions of semiconductors with magnetic memory function. Although classical semiconductor materials, such as Si or GaAs, are nonmagnetic, upon substitutional incorporation of magnetic ions (typically of a few atomic percents of Mn 2+ ions) and very heavy doping with conducting carriers (at the level of 10 20 - 10 21 cm -3 ) a ferromagnetic transition can be induced in such diluted magnetic semiconductors (also known as semimagnetic semiconductors). In the lecture the spectacular experimental observations of carrier concentration induced ferromagnetism will be discussed for three model semiconductor crystals. p - Ga 1-x Mn x As currently the most actively studied and most perspective ferromagnetic semiconductor of III-V group, in which ferromagnetism appears due to Mn ions providing both local magnetic moments and acting as acceptor centers. p - Sn 1-x Mn x Te and p - Ge 1-x Mn x Te classical diluted magnetic semiconductors of IV-VI group, in which paramagnet-ferromagnet and ferromagnet-spin glass transitions are found for very high hole concentration. n - Eu 1-x Gd x Te mixed magnetic crystals, in which the substitution of Gd 3+ ions for Eu 2+ ions creates very high electron concentration and transforms antiferromagnetic EuTe (insulating compound) into ferromagnetic n-type semiconductor alloy. For each of these materials systems the key physical features will be discussed concerning: local magnetic moments formation, magnetic phase diagram as a function of magnetic ions and carrier concentration as well as Curie temperature and magnetic anisotropy engineering. Various theoretical models proposed to explain the effect of carrier concentration induced ferromagnetism in semiconductors will be briefly discussed involving mean field approaches based on Zener and RKKY

Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy.

Science.gov (United States)

Lee, Woobin; Choi, Seungbeom; Kim, Kyung Tae; Kang, Jingu; Park, Sung Kyu; Kim, Yong-Hoon

2015-12-23

We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a peak is generated in the first-order derivatives of light absorption ( A' ) vs. wavelength (λ) plots, and by tracing the peak center shift and peak intensity, transition from insulating-to-semiconducting state of the film can be monitored. The peak generation and peak center shift are described based on photon-energy-dependent absorption coefficient of metal-oxide films. We discuss detailed analysis method for metal-oxide semiconductor films and its application in thin-film transistor fabrication. We believe this derivative spectroscopy based determination can be beneficial for a non-destructive and a rapid monitoring of the insulator-to-semiconductor transition in sol-gel oxide semiconductor formation.

Organic semiconductors in a spin

CERN Document Server

Samuel, I

2002-01-01

A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

A SESAM passively mode-locked fiber laser with a long cavity including a band pass filter

International Nuclear Information System (INIS)

Song, Rui; Chen, Hong-Wei; Chen, Sheng-Ping; Hou, Jing; Lu, Qi-Sheng

2011-01-01

A semiconductor saturable absorber mirror (SESAM) passively mode-locked fiber laser with a long cavity length over 700 m is demonstrated. A band pass filter is inserted into the laser cavity to stabilize the lasing wavelength. Some interesting phenomena are observed and discussed. The central wavelength, repetition rate, average power and single pulse energy of the laser are 1064 nm, 281.5 kHz, 11 mW and 39 nJ, respectively. The laser operates stably without Q-switching instabilities, which greatly reduces the damage opportunities of the SESAM

Passive mode locking of an in-band-pumped Ho:YLiF4 laser at 2.06 μm.

Science.gov (United States)

Coluccelli, Nicola; Lagatsky, Alexander; Di Lieto, Alberto; Tonelli, Mauro; Galzerano, Gianluca; Sibbett, Wilson; Laporta, Paolo

2011-08-15

We demonstrate the passive mode-locking operation of an in-band-pumped Ho:YLiF(4) laser at 2.06 μm using a semiconductor saturable absorber mirror based on InGaAsSb quantum wells. A transform-limited pulse train with minimum duration of 1.1 ps and average power of 0.58 W has been obtained at a repetition frequency of 122 MHz. A maximum output power of 1.7 W has been generated with a corresponding pulse duration of 1.9 ps. © 2011 Optical Society of America

Diode-pumped mode-locked femtosecond Tm:CLNGG disordered crystal laser.

Science.gov (United States)

Ma, J; Xie, G Q; Gao, W L; Yuan, P; Qian, L J; Yu, H H; Zhang, H J; Wang, J Y

2012-04-15

A diode-end-pumped passively mode-locked femtosecond Tm-doped calcium lithium niobium gallium garnet (Tm:CLNGG) disordered crystal laser was demonstrated for the first time to our knowledge. With a 790 nm laser diode pumping, stable CW mode-locking operation was obtained by using a semiconductor saturable absorber mirror. The disordered crystal laser generated mode-locked pulses as short as 479 fs, with an average output power of 288 mW, and repetition rate of 99 MHz in 2 μm spectral region. © 2012 Optical Society of America

A POPULATION OF WEAK METAL-LINE ABSORBERS SURROUNDING THE MILKY WAY

International Nuclear Information System (INIS)

Richter, Philipp; Charlton, Jane C.; Fangano, Alessio P. M.; Bekhti, Nadya Ben; Masiero, Joseph R.

2009-01-01

We report on the detection of a population of weak metal-line absorbers in the halo or nearby intergalactic environment of the Milky Way. Using high-resolution ultraviolet absorption-line spectra of bright quasars (QSO) obtained with the Space Telescope Imaging Spectrograph (STIS), along six sight lines we have observed unsaturated, narrow absorption in O I and Si II, together with mildly saturated C II absorption at high radial velocities (|v LSR | = 100-320 km s -1 ). The measured O I column densities lie in the range N(O I) 14 cm -2 implying that these structures represent Lyman limit Systems and sub-Lyman limit System with H I column densities between 10 16 and 3 x 10 18 cm -2 , thus below the detection limits of current 21 cm all-sky surveys of high-velocity clouds (HVCs). The absorbers apparently are not directly associated with any of the large high column density HVC complexes, but rather represent isolated, partly neutral gas clumps embedded in a more tenuous, ionized gaseous medium situated in the halo or nearby intergalactic environment of the Galaxy. Photoionization modeling of the observed low ion ratios suggests typical hydrogen volume densities of n H > 0.02 cm -3 and characteristic thicknesses of a several parsec down to subparsec scales. For three absorbers, metallicities are constrained in the range of 0.1-1.0 solar, implying that these gaseous structures may have multiple origins inside and outside the Milky Way. Using supplementary optical absorption-line data, we find for two other absorbers Ca II/O I column-density ratios that correspond to solar Ca/O abundance ratios. This finding indicates that these clouds do not contain significant amounts of dust. This population of low column density gas clumps in the circumgalactic environment of the Milky Way is indicative of the various processes that contribute to the circulation of neutral gas in the extended halos of spiral galaxies. These processes include the accretion of gas from the

Study of radiation defects by in-situ measurements of the Hall effect in narrow-gap semiconductors

International Nuclear Information System (INIS)

Favre, J.

1990-01-01

Semiconducting compounds of II-VI, III-V and IV-VI groups were irradiated in liquid hydrogen by high energy (0.7 to 2.7 MeV) electrons. The Hall coefficient and resistivity variations were measured in situ during irradiation. The doping by irradiation induced defects is of p-type in III-V group compounds, while n-type doping occurs in II-VI and IV-VI group materials. A semiconductor to insulator or reverse transition was observed under irradiation when the chemical potential crossed the band edges. In IV-VI group compounds the two successive transitions take place in initially p-type samples. A metastable behaviour, characteristic to strong compensation, appears in the vicinity of those semiconductor - insulator transitions in IV-VI compounds. The slope of free carrier concentration vs. fluence variation was analyzed. It was compared to defect creation rates, calculated in the framework of a cascade model. The charge state of created defects was deduced in this way. - In IV-VI group compounds, the presence of localized levels degenerated with the conduction band and, in PbTe, of additional defect associated levels in the forbidden gap, was demonstrated. Those results are consistent with the saturation of electron concentration increase at high fluence as well as with the analysis of annealing experiments. - In Hg 1-x Cd x Te compounds, the analysis of electron concentration versus fluence increase indicates that only mercury Frenkel pairs are electrically active. The variation with cadmium content of the defect associated level energy was deduced from the saturation values of the electron concentration [fr

Corrosion resistant neutron absorbing coatings

Science.gov (United States)

Choi, Jor-Shan [El Cerrito, CA; Farmer, Joseph C [Tracy, CA; Lee, Chuck K [Hayward, CA; Walker, Jeffrey [Gaithersburg, MD; Russell, Paige [Las Vegas, NV; Kirkwood, Jon [Saint Leonard, MD; Yang, Nancy [Lafayette, CA; Champagne, Victor [Oxford, PA

2012-05-29

A method of forming a corrosion resistant neutron absorbing coating comprising the steps of spray or deposition or sputtering or welding processing to form a composite material made of a spray or deposition or sputtering or welding material, and a neutron absorbing material. Also a corrosion resistant neutron absorbing coating comprising a composite material made of a spray or deposition or sputtering or welding material, and a neutron absorbing material.

Semiconductor detectors in nuclear and particle physics

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.

1992-01-01

Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups: Classical semiconductor diode detectors and semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported

Nonlinear Elasticity of Doped Semiconductors

Science.gov (United States)

2017-02-01

AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

PWR burnable absorber evaluation

International Nuclear Information System (INIS)

Cacciapouti, R.J.; Weader, R.J.; Malone, J.P.

1995-01-01

The purpose of the study was to evaluate the relative neurotic efficiency and fuel cycle cost benefits of PWR burnable absorbers. Establishment of reference low-leakage equilibrium in-core fuel management plans for 12-, 18- and 24-month cycles. Review of the fuel management impact of the integral fuel burnable absorber (IFBA), erbium and gadolinium. Calculation of the U 3 O 8 , UF 6 , SWU, fuel fabrication, and burnable absorber requirements for the defined fuel management plans. Estimation of fuel cycle costs of each fuel management plan at spot market and long-term market fuel prices. Estimation of the comparative savings of the different burnable absorbers in dollar equivalent per kgU of fabricated fuel. (author)

Physics of semiconductor lasers

CERN Document Server

Mroziewicz, B; Nakwaski, W

2013-01-01

Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. II. Spatio-temporal dynamics

Science.gov (United States)

Böhringer, Klaus; Hess, Ortwin

The spatio-temporal dynamics of novel semiconductor lasers is discussed on the basis of a space- and momentum-dependent full time-domain approach. To this means the space-, time-, and momentum-dependent Full-Time Domain Maxwell Semiconductor Bloch equations, derived and discussed in our preceding paper I [K. Böhringer, O. Hess, A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation], are solved by direct numerical integration. Focussing on the device physics of novel semiconductor lasers that profit, in particular, from recent advances in nanoscience and nanotechnology, we discuss the examples of photonic band edge surface emitting lasers (PBE-SEL) and semiconductor disc lasers (SDLs). It is demonstrated that photonic crystal effects can be obtained for finite crystal structures, and leading to a significant improvement in laser performance such as reduced lasing thresholds. In SDLs, a modern device concept designed to increase the power output of surface-emitters in combination with near-diffraction-limited beam quality, we explore the complex interplay between the intracavity optical fields and the quantum well gain material in SDL structures. Our simulations reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers, and stimulated recombination from states near the band edge. Our full time-domain approach is shown to also be an excellent framework for the modelling of the interaction of high-intensity femtosecond and picosecond pulses with semiconductor nanostructures. It is demonstrated that group velocity dispersion, dynamical gain saturation and fast self-phase modulation (SPM) are the main causes for the induced changes and asymmetries in the amplified pulse shape and spectrum of an ultrashort high-intensity pulse. We attest that the time constants of the intraband scattering processes are critical to gain recovery. Moreover, we present

Multi-channel coherent perfect absorbers

KAUST Repository

Bai, Ping

2016-05-18

The absorption efficiency of a coherent perfect absorber usually depends on the phase coherence of the incident waves on the surfaces. Here, we present a scheme to create a multi-channel coherent perfect absorber in which the constraint of phase coherence is loosened. The scheme has a multi-layer structure such that incident waves in different channels with different angular momenta can be simultaneously and perfectly absorbed. This absorber is robust in achieving high absorption efficiency even if the incident waves become "incoherent" and possess "random" wave fronts. Our work demonstrates a unique approach to designing highly efficient metamaterial absorbers. © CopyrightEPLA, 2016.

Multi-channel coherent perfect absorbers

KAUST Repository

Bai, Ping; Wu, Ying; Lai, Yun

2016-01-01

The absorption efficiency of a coherent perfect absorber usually depends on the phase coherence of the incident waves on the surfaces. Here, we present a scheme to create a multi-channel coherent perfect absorber in which the constraint of phase coherence is loosened. The scheme has a multi-layer structure such that incident waves in different channels with different angular momenta can be simultaneously and perfectly absorbed. This absorber is robust in achieving high absorption efficiency even if the incident waves become "incoherent" and possess "random" wave fronts. Our work demonstrates a unique approach to designing highly efficient metamaterial absorbers. © CopyrightEPLA, 2016.

Femoral venous oxygen saturation is no surrogate for central venous oxygen saturation

NARCIS (Netherlands)

van Beest, Paul A.; van der Schors, Alice; Liefers, Henriëtte; Coenen, Ludo G. J.; Braam, Richard L.; Habib, Najib; Braber, Annemarije; Scheeren, Thomas W. L.; Kuiper, Michaël A.; Spronk, Peter E.

2012-01-01

Objective: The purpose of our study was to determine if central venous oxygen saturation and femoral venous oxygen saturation can be used interchangeably during surgery and in critically ill patients. Design: Prospective observational controlled study. Setting: Nonacademic university-affiliated

Feynman Integrals with Absorbing Boundaries

OpenAIRE

Marchewka, A.; Schuss, Z.

1997-01-01

We propose a formulation of an absorbing boundary for a quantum particle. The formulation is based on a Feynman-type integral over trajectories that are confined to the non-absorbing region. Trajectories that reach the absorbing wall are discounted from the population of the surviving trajectories with a certain weighting factor. Under the assumption that absorbed trajectories do not interfere with the surviving trajectories, we obtain a time dependent absorption law. Two examples are worked ...

Semiconductor radiation detection systems

CERN Document Server

2010-01-01

Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

Semiconductor detectors in nuclear and particle physics

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.

1995-01-01

Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups; (i) classical semiconductor diode detectors and (ii) semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported. copyright 1995 American Institute of Physics

Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors

Directory of Open Access Journals (Sweden)

Konrad Maier

2015-09-01

Full Text Available In this work the low temperature response of metal oxide semiconductor gas sensors is analyzed. Important characteristics of this low-temperature response are a pronounced selectivity to acid- and base-forming gases and a large disparity of response and recovery time constants which often leads to an integrator-type of gas response. We show that this kind of sensor performance is related to the trend of semiconductor gas sensors to adsorb water vapor in multi-layer form and that this ability is sensitively influenced by the surface morphology. In particular we show that surface roughness in the nanometer range enhances desorption of water from multi-layer adsorbates, enabling them to respond more swiftly to changes in the ambient humidity. Further experiments reveal that reactive gases, such as NO2 and NH3, which are easily absorbed in the water adsorbate layers, are more easily exchanged across the liquid/air interface when the humidity in the ambient air is high.

II-VI semiconductor compounds

CERN Document Server

1993-01-01

For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

Structural trends in off stoichiometric chalcopyrite type compound semiconductors

Energy Technology Data Exchange (ETDEWEB)

Stephan, Christiane

2011-03-15

Energy supply is one of the most controversial topics that are currently discussed in our global community. Most of the energy delivered to the customer today has its origin in fossil and nuclear power plants. Indefinable risks and the radioactive waste repository problem of the latter as well as the global scarcity of fossil resources cause the renewable energies to grow more and more important for achieving sustainability. The main renewable energy sources are wind power, hydroelectric power and solar energy. On the photovoltaic (PV) market different materials are competing as part of different kinds of technologies, with the largest contribution still coming from wafer based crystalline silicon solar cells (95 %). Until now thin film solar cells only contribute a small portion to the whole PV market, but large capacities are under construction. Thin film photovoltaic shows a number of advantages in comparison to wafer based crystalline silicon PV. Among these material usage and production cost reduction are two prominent examples. The type of PV materials, which are analyzed in this work, are high potential compounds that are widely used as absorber layer in thin film solar cells. These are compound semiconductors of the type CuB{sup III}C{sup VI}{sub 2} (B{sup III} = In, Ga and C{sup VI} = Se, S). Several years of research have already gone into understanding the efficiency limiting factors for solar cell devices fabricated from this compound. Most of the studies concerning electronic defects are done by spectroscopic methods mostly performed using thin films from different kinds of synthesis, without any real knowledge regarding the structural origin of these defects. This work shows a systematic fundamental structural study of intrinsic point defects that are present within the material at various compositions in CuB{sup III}C{sup VI}{sub 2} compound semiconductors. The study is done on reference powder samples with well determined chemical composition and

Structural trends in off stoichiometric chalcopyrite type compound semiconductors

International Nuclear Information System (INIS)

Stephan, Christiane

2011-01-01

Energy supply is one of the most controversial topics that are currently discussed in our global community. Most of the energy delivered to the customer today has its origin in fossil and nuclear power plants. Indefinable risks and the radioactive waste repository problem of the latter as well as the global scarcity of fossil resources cause the renewable energies to grow more and more important for achieving sustainability. The main renewable energy sources are wind power, hydroelectric power and solar energy. On the photovoltaic (PV) market different materials are competing as part of different kinds of technologies, with the largest contribution still coming from wafer based crystalline silicon solar cells (95 %). Until now thin film solar cells only contribute a small portion to the whole PV market, but large capacities are under construction. Thin film photovoltaic shows a number of advantages in comparison to wafer based crystalline silicon PV. Among these material usage and production cost reduction are two prominent examples. The type of PV materials, which are analyzed in this work, are high potential compounds that are widely used as absorber layer in thin film solar cells. These are compound semiconductors of the type CuB III C VI 2 (B III = In, Ga and C VI = Se, S). Several years of research have already gone into understanding the efficiency limiting factors for solar cell devices fabricated from this compound. Most of the studies concerning electronic defects are done by spectroscopic methods mostly performed using thin films from different kinds of synthesis, without any real knowledge regarding the structural origin of these defects. This work shows a systematic fundamental structural study of intrinsic point defects that are present within the material at various compositions in CuB III C VI 2 compound semiconductors. The study is done on reference powder samples with well determined chemical composition and using advanced diffraction techniques

Femoral venous oxygen saturation is no surrogate for central venous oxygen saturation

NARCIS (Netherlands)

van Beest, Paul A.; van der Schors, Alice; Liefers, Henriette; Coenen, Ludo G. J.; Braam, Richard L.; Habib, Najib; Braber, Annemarije; Scheeren, Thomas W. L.; Kuiper, Michael A.; Spronk, Peter E.

2012-01-01

Objective:  The purpose of our study was to determine if central venous oxygen saturation and femoral venous oxygen saturation can be used interchangeably during surgery and in critically ill patients. Design:  Prospective observational controlled study. Setting:  Nonacademic university-affiliated

Visible light broadband perfect absorbers

Energy Technology Data Exchange (ETDEWEB)

Jia, X. L.; Meng, Q. X.; Yuan, C. X.; Zhou, Z. X.; Wang, X. O., E-mail: wxo@hit.edu.cn [School of Science, Harbin Institute of Technology, Harbin 150001 (China)

2016-03-15

The visible light broadband perfect absorbers based on the silver (Ag) nano elliptical disks and holes array are studied using finite difference time domain simulations. The semiconducting indium silicon dioxide thin film is introduced as the space layer in this sandwiched structure. Utilizing the asymmetrical geometry of the structures, polarization sensitivity for transverse electric wave (TE)/transverse magnetic wave (TM) and left circular polarization wave (LCP)/right circular polarization wave (RCP) of the broadband absorption are gained. The absorbers with Ag nano disks and holes array show several peaks absorbance of 100% by numerical simulation. These simple and flexible perfect absorbers are particularly desirable for various potential applications including the solar energy absorber.

Foreword: Focus on Superconductivity in Semiconductors

Directory of Open Access Journals (Sweden)

Yoshihiko Takano

2008-01-01

Full Text Available Since the discovery of superconductivity in diamond, much attention has been given to the issue of superconductivity in semiconductors. Because diamond has a large band gap of 5.5 eV, it is called a wide-gap semiconductor. Upon heavy boron doping over 3×1020 cm−3, diamond becomes metallic and demonstrates superconductivity at temperatures below 11.4 K. This discovery implies that a semiconductor can become a superconductor upon carrier doping. Recently, superconductivity was also discovered in boron-doped silicon and SiC semiconductors. The number of superconducting semiconductors has increased. In 2008 an Fe-based superconductor was discovered in a research project on carrier doping in a LaCuSeO wide-gap semiconductor. This discovery enhanced research activities in the field of superconductivity, where many scientists place particular importance on superconductivity in semiconductors.This focus issue features a variety of topics on superconductivity in semiconductors selected from the 2nd International Workshop on Superconductivity in Diamond and Related Materials (IWSDRM2008, which was held at the National Institute for Materials Science (NIMS, Tsukuba, Japan in July 2008. The 1st workshop was held in 2005 and was published as a special issue in Science and Technology of Advanced Materials (STAM in 2006 (Takano 2006 Sci. Technol. Adv. Mater. 7 S1.The selection of papers describe many important experimental and theoretical studies on superconductivity in semiconductors. Topics on boron-doped diamond include isotope effects (Ekimov et al and the detailed structure of boron sites, and the relation between superconductivity and disorder induced by boron doping. Regarding other semiconductors, the superconducting properties of silicon and SiC (Kriener et al, Muranaka et al and Yanase et al are discussed, and In2O3 (Makise et al is presented as a new superconducting semiconductor. Iron-based superconductors are presented as a new series of high

Semiconductors bonds and bands

CERN Document Server

Ferry, David K

2013-01-01

As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

Room-temperature ductile inorganic semiconductor

Science.gov (United States)

Shi, Xun; Chen, Hongyi; Hao, Feng; Liu, Ruiheng; Wang, Tuo; Qiu, Pengfei; Burkhardt, Ulrich; Grin, Yuri; Chen, Lidong

2018-05-01

Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic α-Ag2S semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver-silver and sulfur-silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.

Energy transfer in light-adapted photosynthetic membranes: from active to saturated photosynthesis.

Science.gov (United States)

Fassioli, Francesca; Olaya-Castro, Alexandra; Scheuring, Simon; Sturgis, James N; Johnson, Neil F

2009-11-04

In bacterial photosynthesis light-harvesting complexes, LH2 and LH1 absorb sunlight energy and deliver it to reaction centers (RCs) with extraordinarily high efficiency. Submolecular resolution images have revealed that both the LH2:LH1 ratio, and the architecture of the photosynthetic membrane itself, adapt to light intensity. We investigate the functional implications of structural adaptations in the energy transfer performance in natural in vivo low- and high-light-adapted membrane architectures of Rhodospirillum photometricum. A model is presented to describe excitation migration across the full range of light intensities that cover states from active photosynthesis, where all RCs are available for charge separation, to saturated photosynthesis where all RCs are unavailable. Our study outlines three key findings. First, there is a critical light-energy density, below which the low-light adapted membrane is more efficient at absorbing photons and generating a charge separation at RCs, than the high-light-adapted membrane. Second, connectivity of core complexes is similar in both membranes, suggesting that, despite different growth conditions, a preferred transfer pathway is through core-core contacts. Third, there may be minimal subareas on the membrane which, containing the same LH2:LH1 ratio, behave as minimal functional units as far as excitation transfer efficiency is concerned.

GaSe:Cd semiconductor - own oxide nanolamellar structures as a selective gas absorber; Structuri nanolamelare semiconductor GaSe:Cd - oxid propriu ca adsorbant selectiv de gaze

Energy Technology Data Exchange (ETDEWEB)

Dmitroglo, Liliana; Evtodiev, Igor; Lazar, Gheorghe [Univ. de Stat din Moldova, Chisinau (Moldova, Republic of); Caraman, Iuliana [Univ. ' Vasile Alecsandri' din Bacau, Bacau (Romania); Dafinei, Adrian [Universitatea din Bucuresti, Bucuresti (Romania)

2012-07-15

A lamella with the thickness of 10-300 {mu}m and C6 axis oriented perpendicular to (001) surface were obtained from {epsilon}-GaSe single crystals grown by Bridgman method. By a heat treatment at the temperature of 450-580 degrees Celsius the lamella surfaces were coated with the own nanostructured (Ga{sub 2}O{sub 3}) oxide. The absorption of polar molecules from the (H{sub 2}O, CO, CON) atmosphere was studied by using absorptional IR spectroscopy. These molecules absorption bands and optical transparency dependence on the absorbed molecules concentration were determined. (authors)

Roadmap on semiconductor-cell biointerfaces

Science.gov (United States)

Tian, Bozhi; Xu, Shuai; Rogers, John A.; Cestellos-Blanco, Stefano; Yang, Peidong; Carvalho-de-Souza, João L.; Bezanilla, Francisco; Liu, Jia; Bao, Zhenan; Hjort, Martin; Cao, Yuhong; Melosh, Nicholas; Lanzani, Guglielmo; Benfenati, Fabio; Galli, Giulia; Gygi, Francois; Kautz, Rylan; Gorodetsky, Alon A.; Kim, Samuel S.; Lu, Timothy K.; Anikeeva, Polina; Cifra, Michal; Krivosudský, Ondrej; Havelka, Daniel; Jiang, Yuanwen

2018-05-01

This roadmap outlines the role semiconductor-based materials play in understanding the complex biophysical dynamics at multiple length scales, as well as the design and implementation of next-generation electronic, optoelectronic, and mechanical devices for biointerfaces. The roadmap emphasizes the advantages of semiconductor building blocks in interfacing, monitoring, and manipulating the activity of biological components, and discusses the possibility of using active semiconductor-cell interfaces for discovering new signaling processes in the biological world.

Optimization of sound absorbing performance for gradient multi-layer-assembled sintered fibrous absorbers

Science.gov (United States)

Zhang, Bo; Zhang, Weiyong; Zhu, Jian

2012-04-01

The transfer matrix method, based on plane wave theory, of multi-layer equivalent fluid is employed to evaluate the sound absorbing properties of two-layer-assembled and three-layer-assembled sintered fibrous sheets (generally regarded as a kind of compound absorber or structures). Two objective functions which are more suitable for the optimization of sound absorption properties of multi-layer absorbers within the wider frequency ranges are developed and the optimized results of using two objective functions are also compared with each other. It is found that using the two objective functions, especially the second one, may be more helpful to exert the sound absorbing properties of absorbers at lower frequencies to the best of their abilities. Then the calculation and optimization of sound absorption properties of multi-layer-assembled structures are performed by developing a simulated annealing genetic arithmetic program and using above-mentioned objective functions. Finally, based on the optimization in this work the thoughts of the gradient design over the acoustic parameters- the porosity, the tortuosity, the viscous and thermal characteristic lengths and the thickness of each samples- of porous metals are put forth and thereby some useful design criteria upon the acoustic parameters of each layer of porous fibrous metals are given while applying the multi-layer-assembled compound absorbers in noise control engineering.

Neutron Absorbing Ability Variation in Neutron Absorbing Material Caused by the Neutron Irradiation in Spent Fuel Storage Facility

Energy Technology Data Exchange (ETDEWEB)

Sohn, Hee Dong; Han, Seul Gi; Lee, Sang Dong; Kim, Ki Hong; Ryu, Eag Hyang; Park, Hwa Gyu [Doosan Heavy Industries and Construction, Changwon (Korea, Republic of)

2014-10-15

In spent fuel storage facility like high density spent fuel storage racks and dry storage casks, spent fuels are stored with neutron absorbing materials installed as a part of those facilities, and they are used for absorbing neutrons emitted from spent fuels. Usually structural material with neutron absorbing material of racks and casks are located around spent fuels, so it is irradiated by neutrons for long time. Neutron absorbing ability could be changed by the variation of nuclide composition in neutron absorbing material caused by the irradiation of neutrons. So, neutron absorbing materials are continuously faced with spent fuels with boric acid solution or inert gas environment. Major nuclides in neutron absorbing material are Al{sup 27}, C{sup 12}, B{sup 11}, B{sup 10} and they are changed to numerous other ones as radioactive decay or neutron absorption reaction. The B{sup 10} content in neutron absorbing material dominates the neutron absorbing ability, so, the variation of nuclide composition including the decrease of B{sup 10} content is the critical factor on neutron absorbing ability. In this study, neutron flux in spent fuel, the activation of neutron absorbing material and the variation of nuclide composition are calculated. And, the minimum neutron flux causing the decrease of B{sup 10} content is calculated in spent fuel storage facility. Finally, the variation of neutron multiplication factor is identified according to the one of B{sup 10} content in neutron absorbing material. The minimum neutron flux to impact the neutron absorbing ability is 10{sup 10} order, however, usual neutron flux from spent fuel is 10{sup 8} order. Therefore, even though neutron absorbing material is irradiated for over 40 years, B{sup 10} content is little decreased, so, initial neutron absorbing ability could be kept continuously.

Resonance Raman spectra of organic molecules absorbed on inorganic semiconducting surfaces: Contribution from both localized intramolecular excitation and intermolecular charge transfer excitation

International Nuclear Information System (INIS)

Ye, ChuanXiang; Zhao, Yi; Liang, WanZhen

2015-01-01

The time-dependent correlation function approach for the calculations of absorption and resonance Raman spectra (RRS) of organic molecules absorbed on semiconductor surfaces [Y. Zhao and W. Z. Liang, J. Chem. Phys. 135, 044108 (2011)] is extended to include the contribution of the intermolecular charge transfer (CT) excitation from the absorbers to the semiconducting nanoparticles. The results demonstrate that the bidirectionally interfacial CT significantly modifies the spectral line shapes. Although the intermolecular CT excitation makes the absorption spectra red shift slightly, it essentially changes the relative intensities of mode-specific RRS and causes the oscillation behavior of surface enhanced Raman spectra with respect to interfacial electronic couplings. Furthermore, the constructive and destructive interferences of RRS from the localized molecular excitation and CT excitation are observed with respect to the electronic coupling and the bottom position of conductor band. The interferences are determined by both excitation pathways and bidirectionally interfacial CT

Introduction to Semiconductor Devices

Science.gov (United States)

Brennan, Kevin F.

2005-03-01

This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

Sound Absorbers

Science.gov (United States)

Fuchs, H. V.; Möser, M.

Sound absorption indicates the transformation of sound energy into heat. It is, for instance, employed to design the acoustics in rooms. The noise emitted by machinery and plants shall be reduced before arriving at a workplace; auditoria such as lecture rooms or concert halls require a certain reverberation time. Such design goals are realised by installing absorbing components at the walls with well-defined absorption characteristics, which are adjusted for corresponding demands. Sound absorbers also play an important role in acoustic capsules, ducts and screens to avoid sound immission from noise intensive environments into the neighbourhood.

Scanning electron microscopy of semiconductor materials

International Nuclear Information System (INIS)

Bresse, J.F.; Dupuy, M.

1978-01-01

The use of scanning electron microscopy in semiconductors opens up a large field of use. The operating modes lending themselves to the study of semiconductors are the induced current, cathodoluminescence and the use of the potential contrast which can also be applied very effectively to the study of the devices (planar in particular). However, a thorough knowledge of the mechanisms of the penetration of electrons, generation and recombination of generated carriers in a semiconductor is necessary in order to attain a better understanding of the operating modes peculiar to semiconductors [fr

Metallurgy and purification of semiconductor materials

International Nuclear Information System (INIS)

Mughal, G.R.; Ali, M.M.; Ali, I.

1996-01-01

In this article the metallurgical aspects of semiconductor science and technology have been stressed here rather than of the physical and electronic aspect of the subject. Semiconductor technology has not merely presented the metallurgist with new challenges. The ease with which the semiconductor planes cleave make possible, the preparation and study of virgin surface. Semiconductor materials were being widely employed in the study of sub-boundaries and structures and can largely contribute to the study of certain aspects of nucleation and growth, precipitation phenomena, mechanical behaviour, in metallurgy. (A.B.)

Semiconductor Lasers Stability, Instability and Chaos

CERN Document Server

Ohtsubo, Junji

2008-01-01

This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

State of the art in semiconductor detectors

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.

1990-01-01

The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

State of the art in semiconductor detectors

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.

1989-01-01

The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

Solid-state NMR of inorganic semiconductors.

Science.gov (United States)

Yesinowski, James P

2012-01-01

Studies of inorganic semiconductors by solid-state NMR vary widely in terms of the nature of the samples investigated, the techniques employed to observe the NMR signal, and the types of information obtained. Compared with the NMR of diamagnetic non-semiconducting substances, important differences often result from the presence of electron or hole carriers that are the hallmark of semiconductors, and whose theoretical interpretation can be involved. This review aims to provide a broad perspective on the topic for the non-expert by providing: (1) a basic introduction to semiconductor physical concepts relevant to NMR, including common crystal structures and the various methods of making samples; (2) discussions of the NMR spin Hamiltonian, details of some of the NMR techniques and strategies used to make measurements and theoretically predict NMR parameters, and examples of how each of the terms in the Hamiltonian has provided useful information in bulk semiconductors; (3) a discussion of the additional considerations needed to interpret the NMR of nanoscale semiconductors, with selected examples. The area of semiconductor NMR is being revitalized by this interest in nanoscale semiconductors, the great improvements in NMR detection sensitivity and resolution that have occurred, and the current interest in optical pumping and spintronics-related studies. Promising directions for future research will be noted throughout.

Neutron absorbing article

International Nuclear Information System (INIS)

Naum, R.G.; Owens, D.P.; Dooher, G.I.

1979-01-01

A neutron absorbing article, in flat plate form and suitable for use in a storage rack for spent fuel, includes boron carbide particles, diluent particles and a solid, irreversibly cured phenolic polymer cured to a continuous matrix binding the boron carbide and diluent particles. The total conent of boron carbide and diluent particles is a major proportion of the article and the content of cured phenolic polymer present is a minor proportion. By regulation of the ratio of boron carbide particles to diluent particles, normally within the range of 1:9 and 9:1 and preferably within the range of 1:5 to 5:1, the neutron absorbing activity of the product may be controlled, which facilitates the manufacture of articles of particular absorbing activities best suitable for specific applications

Spin physics in semiconductors

CERN Document Server

Dyakonov, Mikhail I

2008-01-01

This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

Methods and apparatuses for detection of radiation with semiconductor image sensors

Science.gov (United States)

Cogliati, Joshua Joseph

2018-04-10

A semiconductor image sensor is repeatedly exposed to high-energy photons while a visible light obstructer is in place to block visible light from impinging on the sensor to generate a set of images from the exposures. A composite image is generated from the set of images with common noise substantially removed so the composite image includes image information corresponding to radiated pixels that absorbed at least some energy from the high-energy photons. The composite image is processed to determine a set of bright points in the composite image, each bright point being above a first threshold. The set of bright points is processed to identify lines with two or more bright points that include pixels therebetween that are above a second threshold and identify a presence of the high-energy particles responsive to a number of lines.

Black germanium selective absorber surfaces. Final technical report, September 1, 1978-June 30, 1979

Energy Technology Data Exchange (ETDEWEB)

Messier, R.; Vedam, K.; Krishnaswamy, S.V.

1979-12-01

Semiconductor films with an appropriate band gap (approx. 0.5 to 1.25 ev) have a high absorption coefficient in the solar spectrum region and high transmission in the IR thermal-emission region and thus make nearly ideal selective absorbers. However, due to their high refractive index, semiconductor films have high reflectance above their absorption edge which limits their total absorption. A coating which would retain the advantages of the semiconductor's selectivity and also reduce the reflectance from the present values of 30 to 50% to a level of less than 2% would be a significant advancement in the state of the art. This study describes work on the preparation and characterization of structurally anisotropic black Ge films by rf-sputtering and postdeposition etching. It has been shown that by controlling the sputtering preparation conditions of noncrystalline Ge films the surface microstructure can be drastically altered by simply etching in 30% H/sub 2/O/sub 2/. The total reflectance of the resulting surface was reduced from about 45% to less than 1%. Furthermore, the films appear black over a wide range of angles of incidence ( up to 45% from the normal). This flat black appearance is shown to be due to a dense array of aligned, needle-like protrusions which have an extremely high aspect ratio and both a cross-sectional area and a separation between the needles on th order of the wavelength of solar radiation. Black Ge films were obtained with a solar absorptance, ..cap alpha../sub S/, of greater than 0.99 in the best cases. Variation of ..cap alpha../sub S/ and epsilon/sub IR/ (IR emittance) with the thickness of the film and other preparation conditions is described. Further, the various microstructures are classified and understood on the basis of a structure zone model.

Charge regulation at semiconductor-electrolyte interfaces.

Science.gov (United States)

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2015-07-01

The interface between a semiconductor material and an electrolyte solution has interesting and complex electrostatic properties. Its behavior will depend on the density of mobile charge carriers that are present in both phases as well as on the surface chemistry at the interface through local charge regulation. The latter is driven by chemical equilibria involving the immobile surface groups and the potential determining ions in the electrolyte solution. All these lead to an electrostatic potential distribution that propagate such that the electrolyte and the semiconductor are dependent on each other. Hence, any variation in the charge density in one phase will lead to a response in the other. This has significant implications on the physical properties of single semiconductor-electrolyte interfaces and on the electrostatic interactions between semiconductor particles suspended in electrolyte solutions. The present paper expands on our previous publication (Fleharty et al., 2014) and offers new results on the electrostatics of single semiconductor interfaces as well as on the interaction of charged semiconductor colloids suspended in electrolyte solution. Copyright © 2014 Elsevier Inc. All rights reserved.

SATURATED ZONE IN-SITU TESTING

Energy Technology Data Exchange (ETDEWEB)

P.W. REIMUS

2004-11-08

The purpose of this scientific analysis is to document the results and interpretations of field experiments that test and validate conceptual flow and radionuclide transport models in the saturated zone (SZ) near Yucca Mountain, Nevada. The test interpretations provide estimates of flow and transport parameters used in the development of parameter distributions for total system performance assessment (TSPA) calculations. These parameter distributions are documented in ''Site-Scale Saturated Zone Flow Model (BSC 2004 [DIRS 170037]), Site-Scale Saturated Zone Transport'' (BSC 2004 [DIRS 170036]), Saturated Zone Colloid Transport (BSC 2004 [DIRS 170006]), and ''Saturated Zone Flow and Transport Model Abstraction'' (BSC 2004 [DIRS 170042]). Specifically, this scientific analysis contributes the following to the assessment of the capability of the SZ to serve as part of a natural barrier for waste isolation for the Yucca Mountain repository system: (1) The bases for selection of conceptual flow and transport models in the saturated volcanics and the saturated alluvium located near Yucca Mountain. (2) Results and interpretations of hydraulic and tracer tests conducted in saturated fractured volcanics at the C-wells complex near Yucca Mountain. The test interpretations include estimates of hydraulic conductivities, anisotropy in hydraulic conductivity, storativities, total porosities, effective porosities, longitudinal dispersivities, matrix diffusion mass transfer coefficients, matrix diffusion coefficients, fracture apertures, and colloid transport parameters. (3) Results and interpretations of hydraulic and tracer tests conducted in saturated alluvium at the Alluvial Testing Complex (ATC) located at the southwestern corner of the Nevada Test Site (NTS). The test interpretations include estimates of hydraulic conductivities, storativities, total porosities, effective porosities, longitudinal dispersivities, matrix diffusion mass

SATURATED ZONE IN-SITU TESTING

International Nuclear Information System (INIS)

REIMUS, P.W.

2004-01-01

The purpose of this scientific analysis is to document the results and interpretations of field experiments that test and validate conceptual flow and radionuclide transport models in the saturated zone (SZ) near Yucca Mountain, Nevada. The test interpretations provide estimates of flow and transport parameters used in the development of parameter distributions for total system performance assessment (TSPA) calculations. These parameter distributions are documented in ''Site-Scale Saturated Zone Flow Model (BSC 2004 [DIRS 170037]), Site-Scale Saturated Zone Transport'' (BSC 2004 [DIRS 170036]), Saturated Zone Colloid Transport (BSC 2004 [DIRS 170006]), and ''Saturated Zone Flow and Transport Model Abstraction'' (BSC 2004 [DIRS 170042]). Specifically, this scientific analysis contributes the following to the assessment of the capability of the SZ to serve as part of a natural barrier for waste isolation for the Yucca Mountain repository system: (1) The bases for selection of conceptual flow and transport models in the saturated volcanics and the saturated alluvium located near Yucca Mountain. (2) Results and interpretations of hydraulic and tracer tests conducted in saturated fractured volcanics at the C-wells complex near Yucca Mountain. The test interpretations include estimates of hydraulic conductivities, anisotropy in hydraulic conductivity, storativities, total porosities, effective porosities, longitudinal dispersivities, matrix diffusion mass transfer coefficients, matrix diffusion coefficients, fracture apertures, and colloid transport parameters. (3) Results and interpretations of hydraulic and tracer tests conducted in saturated alluvium at the Alluvial Testing Complex (ATC) located at the southwestern corner of the Nevada Test Site (NTS). The test interpretations include estimates of hydraulic conductivities, storativities, total porosities, effective porosities, longitudinal dispersivities, matrix diffusion mass transfer coefficients, and colloid

Automatic NAA. Saturation activities

International Nuclear Information System (INIS)

Westphal, G.P.; Grass, F.; Kuhnert, M.

2008-01-01

A system for Automatic NAA is based on a list of specific saturation activities determined for one irradiation position at a given neutron flux and a single detector geometry. Originally compiled from measurements of standard reference materials, the list may be extended also by the calculation of saturation activities from k 0 and Q 0 factors, and f and α values of the irradiation position. A systematic improvement of the SRM approach is currently being performed by pseudo-cyclic activation analysis, to reduce counting errors. From these measurements, the list of saturation activities is recalculated in an automatic procedure. (author)

Magnetic excitations in ferromagnetic semiconductors

International Nuclear Information System (INIS)

Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

2009-01-01

Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

Injection of spin-polarized current into semiconductor

International Nuclear Information System (INIS)

Vedyayev, A.V.; Dieny, B.; Ryzhanova, N.V.; Zhukov, I.V.; Zhuravlev, M.Ye.; Lutz, H.O.

2003-01-01

A quantum-statistical theory of injection of spin-polarized current into a semiconductor in ferromagnet/tunnel barrier/semiconductor system is presented. The presence of Schottky barrier in the semiconductor is taken into account. The case of degenerated and non-degenerated semiconductors are considered. Both the diffusive and ballistic transport regime are investigated. The dependence of current polarization on barrier thickness and temperature is calculated

Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces

Directory of Open Access Journals (Sweden)

Yoshihiro Irokawa

2011-01-01

Full Text Available In this paper, I review my recent results in investigating hydrogen sensors using nitride-based semiconductor diodes, focusing on the interaction mechanism of hydrogen with the devices. Firstly, effects of interfacial modification in the devices on hydrogen detection sensitivity are discussed. Surface defects of GaN under Schottky electrodes do not play a critical role in hydrogen sensing characteristics. However, dielectric layers inserted in metal/semiconductor interfaces are found to cause dramatic changes in hydrogen sensing performance, implying that chemical selectivity to hydrogen could be realized. The capacitance-voltage (C-V characteristics reveal that the work function change in the Schottky metal is not responsible mechanism for hydrogen sensitivity. The interface between the metal and the semiconductor plays a critical role in the interaction of hydrogen with semiconductor devises. Secondly, low-frequency C-V characterization is employed to investigate the interaction mechanism of hydrogen with diodes. As a result, it is suggested that the formation of a metal/semiconductor interfacial polarization could be attributed to hydrogen-related dipoles. In addition, using low-frequency C-V characterization leads to clear detection of 100 ppm hydrogen even at room temperature where it is hard to detect hydrogen by using conventional current-voltage (I-V characterization, suggesting that low-frequency C-V method would be effective in detecting very low hydrogen concentrations.

Automation and Integration in Semiconductor Manufacturing

OpenAIRE

Liao, Da-Yin

2010-01-01

Semiconductor automation originates from the prevention and avoidance of frauds in daily fab operations. As semiconductor technology and business continuously advance and grow, manufacturing systems must aggressively evolve to meet the changing technical and business requirements in this industry. Semiconductor manufacturing has been suffering pains from islands of automation. The problems associated with these systems are limited

Ultrafast nonlinear optical processes in metal-dielectric nanocomposites and nanostructures

Energy Technology Data Exchange (ETDEWEB)

Kim, Kwang-Hyon

2012-04-13

This work reports results of a theoretical study of nonlinear optical processes in metal-dielectric nanocomposites used for the increase of the nonlinear coefficients and for plasmonic field enhancement. The main results include the study of the transient saturable nonlinearity in dielectric composites doped with metal nanoparticles, its physical mechanism as well its applications in nonlinear optics. For the study of the transient response, a time-depending equation for the dielectric function of the nanocomposite using the semi-classical two-temperature model is derived. By using this approach, we study the transient nonlinear characteristics of these materials in comparison with preceding experimental measurements. The results show that these materials behave as efficient saturable absorbers for passive mode-locking of lasers in the spectral range from the visible to near IR. We present results for the modelocked dynamics in short-wavelength solid-state and semiconductor disk lasers; in this spectral range other efficient saturable absorbers do not exist. We suggest a new mechanism for the realization of slow light phenomenon by using glasses doped with metal nanoparticles in a pump-probe regime near the plasmonic resonance. Furthermore, we study femtosecond plasmon generation by mode-locked surface plasmon polariton lasers with Bragg reflectors and metal-gain-absorber layered structures. In the final part of the thesis, we present results for high-order harmonic generation near a metallic fractal rough surface. The results show a possible reduction of the pump intensities by three orders of magnitudes and two orders of magnitudes higher efficiency compared with preceding experimental results by using bow-tie nanostructures.

Thiophene-Based Organic Semiconductors.

Science.gov (United States)

Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

2017-10-24

Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

Device Physics of Narrow Gap Semiconductors

CERN Document Server

Chu, Junhao

2010-01-01

Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detector...

Manipulating semiconductor colloidal stability through doping.

Science.gov (United States)

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2014-10-10

The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

Diode having trenches in a semiconductor region

Energy Technology Data Exchange (ETDEWEB)

Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

2016-03-22

An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

Laser semiconductor diode integrated with frequency doubler

International Nuclear Information System (INIS)

Tighineanu, I.; Dorogan, V.; Suruceanu, G.

2003-01-01

The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

Direct measurements of multi-photon induced nonlinear lattice dynamics in semiconductors via time-resolved x-ray scattering.

Science.gov (United States)

Williams, G Jackson; Lee, Sooheyong; Walko, Donald A; Watson, Michael A; Jo, Wonhuyk; Lee, Dong Ryeol; Landahl, Eric C

2016-12-22

Nonlinear optical phenomena in semiconductors present several fundamental problems in modern optics that are of great importance for the development of optoelectronic devices. In particular, the details of photo-induced lattice dynamics at early time-scales prior to carrier recombination remain poorly understood. We demonstrate the first integrated measurements of both optical and structural, material-dependent quantities while also inferring the bulk impulsive strain profile by using high spatial-resolution time-resolved x-ray scattering (TRXS) on bulk crystalline gallium arsenide. Our findings reveal distinctive laser-fluence dependent crystal lattice responses, which are not described by previous TRXS experiments or models. The initial linear expansion of the crystal upon laser excitation stagnates at a laser fluence corresponding to the saturation of the free carrier density before resuming expansion in a third regime at higher fluences where two-photon absorption becomes dominant. Our interpretations of the lattice dynamics as nonlinear optical effects are confirmed by numerical simulations and by additional measurements in an n-type semiconductor that allows higher-order nonlinear optical processes to be directly observed as modulations of x-ray diffraction lineshapes.

An organic dye-polymer (phenol red-poly (vinyl alcohol)) composite architecture towards tunable -optical and -saturable absorption characteristics

Energy Technology Data Exchange (ETDEWEB)

Sreedhar, Sreeja, E-mail: sreejasreedhar83@gmail.com; Muneera, C. I., E-mail: drcimuneera@hotmail.com [Department of Physics, University of Kerala, Kariavattom, Thiruvananthapuram 695581, Kerala (India); Illyaskutty, Navas [Institute for Sensorics and Information Systems (ISIS), Karlsruhe University of Applied Sciences, Moltkestr. 30, D-76133 Karlsruhe (Germany); Sreedhanya, S. [School of Chemical Sciences, M. G. University, Kottayam, Kerala 686560 (India); Philip, Reji [Light and Matter Physics Group, Raman Research Institute, Bangalore 560080 (India)

2016-05-21

Herein, we demonstrate that blending an organic dye (guest/filler), with a vinyl polymer (host template), is an inexpensive and simple approach for the fabrication of multifunctional photonic materials which could display an enhancement in the desirable properties of the constituent materials and, at the same time provide novel synergistic properties for the guest-host system. A new guest-host nanocomposite system comprising Phenol Red dye and poly (vinyl alcohol) as guest and host template, respectively, which exhibits tunable optical characteristics and saturable absorption behavior, is introduced. The dependence of local electronic environment provided by the polymer template and the interactions of the polymer molecules with the encapsulated guest molecules on the observed optical/nonlinear absorption behavior is discussed. An understanding of the tunability of the optical/ photophysical processes, with respect to the filler content, as discussed herein could help in the design of improved optical materials for several photonic device applications like organic light emitting diodes and saturable absorbers.

Fault tolerant control of systems with saturations

DEFF Research Database (Denmark)

Niemann, Hans Henrik

2013-01-01

This paper presents framework for fault tolerant controllers (FTC) that includes input saturation. The controller architecture known from FTC is based on the Youla-Jabr-Bongiorno-Kucera (YJBK) parameterization is extended to handle input saturation. Applying this controller architecture in connec......This paper presents framework for fault tolerant controllers (FTC) that includes input saturation. The controller architecture known from FTC is based on the Youla-Jabr-Bongiorno-Kucera (YJBK) parameterization is extended to handle input saturation. Applying this controller architecture...... in connection with faulty systems including input saturation gives an additional YJBK transfer function related to the input saturation. In the fault free case, this additional YJBK transfer function can be applied directly for optimizing the feedback loop around the input saturation. In the faulty case......, the design problem is a mixed design problem involved both parametric faults and input saturation....

Semiconductor radiation detectors. Device physics

International Nuclear Information System (INIS)

Lutz, G.

2007-01-01

Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

Radiation sterilization of absorbent cotton and of absorbent gauze

International Nuclear Information System (INIS)

Hosobuchi, Kazunari; Oka, Mitsuru; Kaneko, Akira; Ishiwata, Hiroshi.

1986-01-01

The bioburden of absorbent cotton and of absorbent gauze and their physical and chemical characteristics after irradiation are investigated. The survey conducted on contaminants of 1890 cotton samples from 53 lots and 805 gauze samples from 56 lots showed maximum numbers of microbes per g of the cotton and gauze were 859 (an average of 21.4) and 777 (an average of 42.2), respectively. Isolation and microbiological and biochemical tests of representative microbes indicated that all of them, except one, were bacilli. The sterilization dose at 10 -6 of sterlity assurance level was found to be 2.0 Mrad when irradiated the spores loaded on paper strips and examined populations having graded D values from 0.10 to 0.28 Mrad. The sterilization dose would be about 1.5 Mrad if subjected the average numbers of contaminants observed in this study to irradiation. No significant differences were found between the irradiated samples and control up to 2 Mrad in tensile strength, change of color, absorbency, sedimentation rate, soluble substances, and pH of solutions used for immersion and other tests conventionally used. These results indicate that these products can be sterilized by irradiation. (author)

Epitaxy of semiconductor-superconductor nanowires

DEFF Research Database (Denmark)

Krogstrup, P.; Ziino, N.L.B.; Chang, W.

2015-01-01

Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface...

Semiconductor Lasers Stability, Instability and Chaos

CERN Document Server

Ohtsubo, Junji

2013-01-01

This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

Comparison of pulseoximetry oxygen saturation and arterial oxygen saturation in open heart intensive care unit

Directory of Open Access Journals (Sweden)

Alireza Mahoori

2013-08-01

Full Text Available Background: Pulseoximetry is widely used in the critical care setting, currently used to guide therapeutic interventions. Few studies have evaluated the accuracy of SPO2 (puls-eoximetry oxygen saturation in intensive care unit after cardiac surgery. Our objective was to compare pulseoximetry with arterial oxygen saturation (SaO2 during clinical routine in such patients, and to examine the effect of mild acidosis on this relationship.Methods: In an observational prospective study 80 patients were evaluated in intensive care unit after cardiac surgery. SPO2 was recorded and compared with SaO2 obtained by blood gas analysis. One or serial arterial blood gas analyses (ABGs were performed via a radial artery line while a reliable pulseoximeter signal was present. One hundred thirty seven samples were collected and for each blood gas analyses, SaO2 and SPO2 we recorded.Results: O2 saturation as a marker of peripheral perfusion was measured by Pulseoxim-etry (SPO2. The mean difference between arterial oxygen saturation and pulseoximetry oxygen saturation was 0.12%±1.6%. A total of 137 paired readings demonstrated good correlation (r=0.754; P<0.0001 between changes in SPO2 and those in SaO2 in samples with normal hemoglobin. Also in forty seven samples with mild acidosis, paired readings demonstrated good correlation (r=0.799; P<0.0001 and the mean difference between SaO2 and SPO2 was 0.05%±1.5%.Conclusion: Data showed that in patients with stable hemodynamic and good signal quality, changes in pulseoximetry oxygen saturation reliably predict equivalent changes in arterial oxygen saturation. Mild acidosis doesn’t alter the relation between SPO2 and SaO2 to any clinically important extent. In conclusion, the pulse oximeter is useful to monitor oxygen saturation in patients with stable hemodynamic.

Tunable radiation emitting semiconductor device

NARCIS (Netherlands)

2009-01-01

A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

Optical coherent control in semiconductors

DEFF Research Database (Denmark)

Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

2001-01-01

of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

Semiconductor materials and their properties

NARCIS (Netherlands)

Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

2017-01-01

Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

Semiconductor opto-electronics

CERN Document Server

Moss, TS; Ellis, B

1972-01-01

Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

Disorder-induced localization of excitability in an array of coupled lasers

Science.gov (United States)

Lamperti, M.; Perego, A. M.

2017-10-01

We report on the localization of excitability induced by disorder in an array of coupled semiconductor lasers with a saturable absorber. Through numerical simulations we show that the exponential localization of excitable waves occurs if a certain critical amount of randomness is present in the coupling coefficients among the lasers. The results presented in this Rapid Communication demonstrate that disorder can induce localization in lattices of excitable nonlinear oscillators, and can be of interest in the study of photonics-based random networks, neuromorphic systems, and, by analogy, in biology, in particular, in the investigation of the collective dynamics of neuronal cell populations.

Self-stabilization of a mode-locked femtosecond fiber laser using a photonic bandgap fiber

DEFF Research Database (Denmark)

Liu, Xiaomin; Lægsgaard, Jesper; Turchinovich, Dmitry

2010-01-01

We demonstrate a self-stabilization mechanism of a semiconductor saturable absorber mode-locked linearcavity Yb-doped fiber laser using an intracavity photonic bandgap fiber. This mechanism relies on the spectral shift of the laser pulses to a spectral range of higher anomalous dispersion...... and higher loss of the photonic bandgap fiber, as a reaction to the intracavity power buildup. This, in particular, results in a smaller cavity loss for the stably mode-locked laser, as opposed to the Q-switched mode-locking scenario. The laser provides stable 39–49 pJ pulses of around 230 fs duration at 29...

Monolithic all-PM femtosecond Yb-fiber laser stabilized with a narrow-band fiber Bragg grating and pulse-compressed in a hollow-core photonic crystal fiber

DEFF Research Database (Denmark)

Turchinovich, Dmitry; Liu, Xiaomin; Lægsgaard, Jesper

2008-01-01

. The laser output is compressed in a spliced-on hollow-core PM photonic crystal fiber, thus providing direct end-of-the-fiber delivery of pulses of around 370 fs duration and 4 nJ energy with high mode quality. Tuning the pump power of the end amplifier of the laser allows for the control of output pulse......We report on an environmentally stable self-starting monolithic (i.e. without any free-space coupling) all-polarization-maintaining (PM) femtosecond Yb-fiber laser, stabilized against Q-switching by a narrow-band fiber Bragg grating and modelocked using a semiconductor saturable absorber mirror...

CW and femtosecond operation of a diode-pumped Yb:BaY(2)F(8) laser.

Science.gov (United States)

Galzerano, G; Coluccelli, N; Gatti, D; Di Lieto, A; Tonelli, M; Laporta, P

2010-03-15

We report for the first time on laser action of a diode-pumped Yb:BaY(2)F(8) crystal. Both CW and femtosecond operations have been demonstrated at room-temperature conditions. A maximum output power of 0.56 W, a slope efficiency of 34%, and a tunability range from 1013 to 1067 nm have been obtained in CW regime. Transform-limited pulse trains with a minimum duration of 275 fs, an average power of 40 mW, and a repetition rate of 83 MHz have been achieved in a passive mode-locked regime using a semiconductor saturable absorber mirror.

Nuclear radiation detection by a variband semiconductor

International Nuclear Information System (INIS)

Volkov, A.S.

1981-01-01

Possibilities of using a variband semiconductor for detecting nuclear radiations are considered. It is shown that the variaband quasielectric field effectively collects charges induced by a nuclear particle only at a small mean free path in the semiconductor (up to 100 μm), the luminescence spectrum of the variband semiconductor when a nuclear particle gets into it, in principle, permits to determine both the energy and mean free path in the semiconductor (even at large mean free paths) [ru

Preparation of Active Absorbent for Flue Gas Desulfurization From Coal Bottom Ash: Effect of Absorbent Preparation Variables

Directory of Open Access Journals (Sweden)

Chang Chin Li, Lee Keat Teong, Subhash Bhatia and Abdul Rahman Mohamed

2012-08-01

Full Text Available An active absorbent for flue gas desulfurization was prepared from coal bottom ash, calcium oxide (CaO and calcium sulfate by hydro-thermal process. The absorbent was examined for its micro-structural properties. The experiments conducted were based on Design Of Experiments (DOE according to 23 factorial design. The effect of various absorbent preparation variables such as ratio of CaO to bottom ash (A, hydration temperature (B and hydration period (C towards the BET (Brunauer-Emmett-Teller specific surface area of the absorbent were studied. At a CaO to bottom ash ratio = 2, hydration temperature = 200 ?C and hydration period = 10 hrs, absorbent with a surface area of 90.1 m2/g was obtained. Based on the analysis of the factorial design, it was concluded that factor A and C as well as the interaction of factors ABC and BC are the significant factors that effect the BET surface area of the absorbent. A linear mathematical model that describes the relation between the independent variables and interaction between variables towards the BET specific surface area of the absorbent was also developed. Analysis of variance (ANOVA showed that the model was significant at 1% level.Key Words: Absorbent, Bottom Ash, Design Of Experiments, Desulfurization, Surface Area.

The formation of CuInSe{sub 2}-based thin-film solar cell absorbers from alternative low-cost precursors

Energy Technology Data Exchange (ETDEWEB)

Jost, S.

2008-01-18

This work deals with real-time investigations concerning the crystallisation process of CuInSe{sub 2}-based thin-film solar cell absorbers while annealing differently produced and composed ''low-cost'' precursors. Various types of precursors have been investigated concerning their crystallisation behaviour. Three groups of experiments have been performed: (i) Investigations concerning the crystallisation process of the quaternary chalcopyrite Cu(In,Al)Se{sub 2} and Cu(In,Al)S{sub 2}, (ii) investigations concerning the formation process of the compound semiconductor CuInSe{sub 2} from electroplated precursors, and (iii) investigations concerning the crystallisation of Cu(In,Ga)Se{sub 2} using precursors with thermally evaporated indium. A specific sample surrounding has been constructed, which enables to perform time-resolved angle-dispersive X-ray powder diffraction experiments during the annealing process of precursor samples. A thorough analysis of subsequently recorded diffraction patterns using the Rietveld method provides a detailed knowledge about the semiconductor crystallisation process while annealing. Based on these fundamental investigations, conclusions have been drawn concerning an adaptation of the precursor deposition process in order to optimise the final solar cell results. The investigations have shown, that one class of electroplated precursors shows a crystallisation behaviour identical to the one known for vacuum-deposited precursors. The investigations concerning the crystallisation process of the quaternary chalcopyrite Cu(In,Al)Se{sub 2} revealed, that the chalcopyrite forms from the ternary selenide (Al,In){sub 2}Se{sub 3} and Cu{sub 2}Se at elevated process temperatures. This result is used to explain the separation of the absorber layer into an aluminum-rich and an indium-rich chalcopyrite phase, which has been observed at processed Cu(In,Al)Se{sub 2} absorbers from several research groups. In addition, differences

Catalytic photooxidation of pentachlorophenol using semiconductor nanoclusters

Energy Technology Data Exchange (ETDEWEB)

WILCOXON,JESS P.

2000-04-17

Pentachlorophenol (PCP) is a toxic chlorinated aromatic molecule widely used as fungicide, a bactericide and a wood preservation, and thus ubiquitous in the environment. The authors report photo-oxidation of PCP using a variety of nanosize semiconductor metal oxides and sulfides in both aqueous and polar organic solvents and compare the photo-oxidation kinetics of these nanoclusters to widely studied bulk powders like Degussa P-25 TiO{sub 2} and CdS. They study both the light intensity dependence of PCP photooxidation for nanosize SnO{sub 2} and the size dependence of PCP photooxidation for both nanosize SnO{sub 2} and MoS{sub 2}. They find an extremely strong size dependence for the latter which they attribute to its size-dependent band gap and the associated change in redox potentials due to quantum confinement of the hole-electron pair. The authors show that nanosize MoS{sub 2} with a diameter of d=3.0 nm and an absorbance edge of {approximately}450 nm is a very effective photooxidation catalyst for complete PCP mineralization, even when using only visible light irradiation.

Quantum transport in semiconductor nanowires

NARCIS (Netherlands)

Van Dam, J.

2006-01-01

This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

Science.gov (United States)

Calvez, S.; Adams, M. J.

2012-09-01

Anniversaries call for celebrations. Since it is now fifty years since the first semiconductor lasers were reported, it is highly appropriate to celebrate this anniversary with a Special Issue dedicated to the topic. The semiconductor laser now has a major effect on our daily lives since it has been a key enabler in the development of optical fibre communications (and hence the internet and e-mail), optical storage (CDs, DVDs, etc) and barcode scanners. In the early 1960s it was impossible for most people (with the exception of very few visionaries) to foresee any of these future developments, and the first applications identified were for military purposes (range-finders, target markers, etc). Of course, many of the subsequent laser applications were made possible by developments in semiconductor materials, in the associated growth and fabrication technology, and in the increased understanding of the underlying fundamental physics. These developments continue today, so that the subject of semiconductor lasers, although mature, is in good health and continues to grow. Hence, we can be confident that the pervasive influence of semiconductor lasers will continue to develop as optoelectronics technology makes further advances into other sectors such as healthcare, security and a whole host of applications based on the global imperatives to reduce energy consumption, minimise environmental impact and conserve resources. The papers in this Special Issue are intended to tell some of the story of the last fifty years of laser development as well as to provide evidence of the current state of semiconductor laser research. Hence, there are a number of papers where the early developments are recalled by authors who played prominent parts in the story, followed by a selection of papers from authors who are active in today's exciting research. The twenty-fifth anniversary of the semiconductor laser was celebrated by the publication of a number of papers dealing with the early

Quantum optics with semiconductor nanostructures

CERN Document Server

Jahnke, Frank

2012-01-01

A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

Photooxidation of organic wastes using semiconductor nanoclusters. 1998 annual progress report

International Nuclear Information System (INIS)

Wilcoxon, J.P.

1998-01-01

'This report summarizes work after 1.5 years of a 3-year project. The authors efforts have focused on demonstration of photocatalysis of organic pollutants using nanosize MoS 2 . They investigated the effects of (1) bandgap, valence and conduction band energies; (2) surface modification of MoS 2 by deposition of metal and metal oxide islands to enhance electron transfer; and (3) use of semi-conductor semi-conductor composites to achieve improved charge separation and thus photooxidation of pollutants. They synthesized and studied nanosize MoS 2 of three different sizes and associated bandgaps and studied photoredox reactions of nanosize MoS 2 dispersed in solution and supported on a macroscopic powder. The latter would be the method of choice for use as a practical photocatalyst for water purification. As they emphasized in the original proposal, MoS 2 in nanosize form can be tuned to absorb various amounts of the solar spectrum. They discovered there is an optimal choice of absorbance characteristics and valence and conduction band levels which allow the rapid photo-oxidation of a chosen organic molecule. The advantages of having a photostable material with a tunable bandgap were demonstrated in an experiment where phenol destruction with visible (> 450 nm) light occurred at a dramatically faster rate with nanoscale MoS 2 catalysts compared to the best available previous material TiO 2 . This was the first demonstration of rapid photooxidation of an organic molecule using a completely photostable catalyst and only visible light. The possibility of transferring electrons or holes between nanoscale MoS 2 and other semiconductor materials in order to increase electron/hole lifetimes were explored. It was shown that small amounts ( 2 deposited on to TiO 2 can lead to significant (∼2) enhancements of phenol destruction rates. A number of different chemicals were photocatalyzed sucessfully to CO 2 , but most of the work centered on the destruction of phenol. This

Ternary chalcopyrite semiconductors

CERN Document Server

Shay, J L; Pamplin, B R

2013-01-01

Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

46 CFR 183.360 - Semiconductor rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 7 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents...

Output Power Limitations and Improvements in Passively Mode Locked GaAs/AlGaAs Quantum Well Lasers.

Science.gov (United States)

Tandoi, Giuseppe; Ironside, Charles N; Marsh, John H; Bryce, A Catrina

2012-03-01

We report a novel approach for increasing the output power in passively mode locked semiconductor lasers. Our approach uses epitaxial structures with an optical trap in the bottom cladding that enlarges the vertical mode size to scale the pulse saturation energy. With this approach we demonstrate a very high peak power of 9.8 W per facet, at a repetition rate of 6.8 GHz and with pulse duration of 0.71 ps. In particular, we compare two GaAs/AlGaAs epilayer designs, a double quantum well design operating at 830 nm and a single quantum well design operating at 795 nm, with vertical mode sizes of 0.5 and 0.75 μm, respectively. We show that a larger mode size not only shifts the mode locking regime of operation towards higher powers, but also produces other improvements in respect of two main failure mechanisms that limit the output power: the catastrophic optical mirror damage and the catastrophic optical saturable absorber damage. For the 830 nm material structure, we also investigate the effect of non-absorbing mirrors on output power and mode locked operation of colliding pulse mode locked lasers.

Burnable neutron absorbers

International Nuclear Information System (INIS)

Radford, K.C.; Carlson, W.G.

1983-01-01

A neutron-absorber body for use in burnable poison rods in a nuclear reactor. The body is composed of a matrix of Al 2 O 3 containing B 4 C, the neutron absorber. Areas of high density polycrystalline Al 2 O 3 particles are predominantly encircled by pores in some of which there are B 4 C particles. This body is produced by initially spray drying a slurry of A1 2 O 3 powder to which a binder has been added. The powder of agglomerated spheres of the A1 2 O 3 with the binder are dry mixed with B 4 C powder. The mixed powder is formed into a green body by isostatic pressure and the green body is sintered. The sintered body is processed to form the neutron-absorber body. In this case the B 4 C particles are separate from the spheres resulting from the spray drying instead of being embedded in the sphere

Neutron absorbers and methods of forming at least a portion of a neutron absorber

Energy Technology Data Exchange (ETDEWEB)

Guillen, Donna P; Porter, Douglas L; Swank, W David; Erickson, Arnold W

2014-12-02

Methods of forming at least a portion of a neutron absorber include combining a first material and a second material to form a compound, reducing the compound into a plurality of particles, mixing the plurality of particles with a third material, and pressing the mixture of the plurality of particles and the third material. One or more components of neutron absorbers may be formed by such methods. Neutron absorbers may include a composite material including an intermetallic compound comprising hafnium aluminide and a matrix material comprising pure aluminum.

nitrogen saturation in stream ecosystems

OpenAIRE

Earl, S. R.; Valett, H. M.; Webster, J. R.

2006-01-01

The concept of nitrogen (N) saturation has organized the assessment of N loading in terrestrial ecosystems. Here we extend the concept to lotic ecosystems by coupling Michaelis-Menten kinetics and nutrient spiraling. We propose a series of saturation response types, which may be used to characterize the proximity of streams to N saturation. We conducted a series of short-term N releases using a tracer ((NO3)-N-15-N) to measure uptake. Experiments were conducted in streams spanning a gradient ...

Semiconductor high-energy radiation scintillation detector

International Nuclear Information System (INIS)

Kastalsky, A.; Luryi, S.; Spivak, B.

2006-01-01

We propose a new scintillation-type detector in which high-energy radiation generates electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. An important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombination time of minority carriers. Notably, the fast response comes without any degradation in brightness. When the scintillator is implemented in a qualified semiconductor material (such as InP or GaAs), the photo-detector and associated circuits can be epitaxially integrated on the scintillator slab and the structure can be stacked-up to achieve virtually any desired absorption capability

46 CFR 129.360 - Semiconductor-rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a...

46 CFR 120.360 - Semiconductor rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a...

Coherent dynamics in semiconductors

DEFF Research Database (Denmark)

Hvam, Jørn Märcher

1998-01-01

enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

Ag-based semiconductor photocatalysts in environmental purification

Energy Technology Data Exchange (ETDEWEB)

Li, Jiade; Fang, Wen [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); Yu, Changlin, E-mail: yuchanglinjx@163.com [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); School of Environment Engineering and biology Engineering, Guangdong University of Petrochemical Technology, Maoming, 525000 Guangdong Province (China); Zhou, Wanqin [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, 350002 (China); Zhu, Lihua [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); Xie, Yu, E-mail: xieyu_121@163.com [College of Environment and Chemical Engineering, Nanchang Hangkong University, Nanchang 330063, Jiangxi (China)

2015-12-15

Graphical abstract: Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Formation of heterojunction could largely promote the electron/hole pair separation, resulting in highly photocatalytic activity and stability. - Highlights: • Recent research progress in the fabrication and application of Ag-based semiconductor photocatalyts. • The advantages and disadvantages of Ag-based semiconductor as photocatalysts. • Strategies in design Ag-based semiconductor photocatalysts with high performance. - Abstract: Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO{sub 2}, ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag

Ag-based semiconductor photocatalysts in environmental purification

International Nuclear Information System (INIS)

Li, Jiade; Fang, Wen; Yu, Changlin; Zhou, Wanqin; Zhu, Lihua; Xie, Yu

2015-01-01

Graphical abstract: Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Formation of heterojunction could largely promote the electron/hole pair separation, resulting in highly photocatalytic activity and stability. - Highlights: • Recent research progress in the fabrication and application of Ag-based semiconductor photocatalyts. • The advantages and disadvantages of Ag-based semiconductor as photocatalysts. • Strategies in design Ag-based semiconductor photocatalysts with high performance. - Abstract: Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO 2 , ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag

Effect of Collagen Matrix Saturation on the Surface Free Energy of Dentin using Different Agents.

Science.gov (United States)

de Almeida, Leopoldina de Fátima Dantas; Souza, Samilly Evangelista; Sampaio, Aline Araújo; Cavalcanti, Yuri Wanderley; da Silva, Wander José; Del Bel Cur, Altair A; Hebling, Josimeri

2015-07-01

The surface free energy of conditioned-dentin is one of the factors that interfere with monomeric infiltration of the interfibrillar spaces. Saturation of the tooth matrix with different substances may modulate this energy and, consequently, the wettability of the dentin. To evaluate the influence of different substances used to saturate conditioned-dentin on surface free energy (SFE) of this substrate. Dentin blocks (4 × 7 × 1 mm, n = 6/ group), obtained from the roots of bovine incisors, were etched using phosphoric acid for 15 seconds, rinsed and gently dried. The surfaces were treated for 60 seconds with: ultra-purified water (H20-control); ethanol (EtOH), acetone (ACT), chlorhexidine (CHX), ethylenediaminetetraacetic acid (EDTA); or sodium hypochlorite (NaOCl). The tooth surfaces were once again dried with absorbent paper and prepared for SFE evaluation using three standards: water, formamide and bromonaphthalene. Analysis of variance (ANOVA) and Dunnet's tests (a = 0.05) were applied to the data. Ethylenediaminetetraacetic acid was the only substance that caused a change to the contact angle for the standards water and formamide, while only EtOH influenced the angles formed between formamide and the dentin surface. None of the substances exerted a significant effect for bromonaphtha-lene. In comparison to the control, only EDTA and NaOCl altered both polar components of the SFE. Total SFE was increased by saturation of the collagen matrix by EDTA and reduced when NaOCl was used. Saturation of the collagen matrix by EDTA and EtOH changed the surface free energy of the dentin. In addition, the use of NaOCl negatively interfered with the properties evaluated. The increase of surface free energy and wettability of the dentin surface would allow higher penetration of the the adhesive system, which would be of importance to the clinical success of resin-dentin union.

Mechanisms of current flow in metal-semiconductor ohmic contacts

International Nuclear Information System (INIS)

Blank, T. V.; Gol'dberg, Yu. A.

2007-01-01

Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II-VI semiconductors (ZnSe, ZnO), III-V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1-0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3-0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed

Neutron absorbing article

International Nuclear Information System (INIS)

Naum, R.G.; Owens, D.P.; Dooker, G.I.

1981-01-01

A neutron-absorbing article suitable for use in spent fuel racks is described. It comprises boron carbide particles, diluent particles, and a phenolic polymer cured to a continuous matrix. The diluent may be silicon carbide, graphite, amorphous carbon, alumina, or silica. The combined boron carbide-diluent phase contains no more than 2 percent B 2 O 3 , and the neutron-absorbing article contains from 20 to 40 percent phenol resin. The ratio of boron carbide to diluent particles is in the range 1:9 to 9:1

Mechanical shock absorber

International Nuclear Information System (INIS)

Vrillon, Bernard.

1973-01-01

The mechanical shock absorber described is made of a constant thickness plate pierced with circular holes regularly distributed in such a manner that for all the directions along which the strain is applied during the shock, the same section of the substance forming the plate is achieved. The shock absorber is made in a metal standing up to extensive deformation before breaking, selected from a group comprising mild steels and austenitic stainless steels. This apparatus is used for handling pots of fast neutron reactor fuel elements [fr

Gain transient control for wavelength division multiplexed access networks using semiconductor optical amplifiers

DEFF Research Database (Denmark)

Gibbon, Timothy Braidwood; Osadchiy, Alexey Vladimirovich; Kjær, Rasmus

2009-01-01

Gain transients can severely hamper the upstream network performance in wavelength division multiplexed (WDM) access networks featuring erbium doped fiber amplifiers (EDFAs) or Raman amplification. We experimentally demonstrate for the first time using 10 Gb/s fiber transmission bit error rate...... measurements how a near-saturated semiconductor optical amplifier (SOA) can be used to control these gain transients. An SOA is shown to reduce the penalty of transients originating in an EDFA from 2.3 dB to 0.2 dB for 10 Gb/s transmission over standard single mode fiber using a 231-1 PRBS pattern. The results...... suggest that a single SOA integrated within a WDM receiver at the metro node could offer a convenient all-optical solution for upstream transient controlin WDM access networks....

Life-cycle assessment of semiconductors

CERN Document Server

Boyd, Sarah B

2012-01-01

Life-Cycle Assessment of Semiconductors presents the first and thus far only available transparent and complete life cycle assessment of semiconductor devices. A lack of reliable semiconductor LCA data has been a major challenge to evaluation of the potential environmental benefits of information technologies (IT). The analysis and results presented in this book will allow a higher degree of confidence and certainty in decisions concerning the use of IT in efforts to reduce climate change and other environmental effects. Coverage includes but is not limited to semiconductor manufacturing trends by product type and geography, unique coverage of life-cycle assessment, with a focus on uncertainty and sensitivity analysis of energy and global warming missions for CMOS logic devices, life cycle assessment of flash memory and life cycle assessment of DRAM. The information and conclusions discussed here will be highly relevant and useful to individuals and institutions. The book also: Provides a detailed, complete a...

Apparatus for testing semiconductor devices and capacitors

International Nuclear Information System (INIS)

York, R.A.

1984-01-01

An apparatus is provided for testing semiconductor devices. The apparatus tests the impedance of the semiconductor devices in both conducting and non-conducting states to detect semiconductors whose impedance in the conducting state is too high or whose impedance in the non-conducting state is too low. The apparatus uses a battery source for low voltage d.c. The circuitry for detecting when the impedance is too high in the conducting state includes a lamp in series with the battery source and the semiconductor device, whereby the impedance of the semiconductor device determines whether sufficient current will flow through the lamp to cause the lamp to illuminate. A d.c. to d.c. converter is provided to boost the voltage from the battery source to a relatively high voltage d.c. The relatively high voltage d.c. can be connected by a switch to circuitry for detecting when the impedance of the semiconductor device in the non-conducting state is too low. The circuitry for detecting when the impedance of the semiconductor device is too low includes a resistor which senses the current flowing in the device and converts the current into a voltage proportional to the leakage current. This voltage is then compared against a fixed reference. Further circuitry is provided for providing a visual indication when the voltage representative of leakage in relation to the reference signal indicates that there is excessive current flow through the semiconductor device

A comparative study on surface morphology from the HgI2 semiconductors prepared by different techniques

International Nuclear Information System (INIS)

Martins, Joao F.T.; Ferraz, Caue de M.; Santos, Robinson A. dos; Mesquita, Carlos H. de; Hamada, Margarida M.

2013-01-01

The impurity effect in the surface morphology quality of HgI 2 crystals was evaluated, aiming a future application of these crystals as room temperature radiation semiconductor detector. The crystals were purified and grown by two techniques: (1) physical vapor transport (PVT) and (2) saturated solution from dimethylsulfoxide (DMSO) complexes. Systematic measurements were carried out for determining the stoichiometry, structure orientation, surface morphology and impurity of the crystal. The best quality of surface morphology was found for the crystals purified and grown by the PVT technique. Significant decrease in the impurity concentration was found, purifying the crystal by means of two successive growths by the PVT technique, while a Si contamination in the HgI 2 crystal was observed, during its growth by the DMSO method. Thus, for DMSO technique was not possible to identify the peaks of the other trace elements present as impurities in the PVT crystal, due to the high intensity of the Si peak in the DMSO crystal. It was demonstrated the impurities affect significantly the surface morphology quality from the HgI 2 crystal. Key Words: Semiconductor crystal, Radiation detector, Mercury Iodide crystal, surface morphology. (author)

Changes induced in spice paprika powder by treatment with ionizing radiation and saturated steam[Food conservation; Spice paprika; Rheology; Colorimetry; Free radicals

Energy Technology Data Exchange (ETDEWEB)

Kispeter, J. E-mail: kispeter@szef.u-szeged.hu; Bajusz-Kabok, K.; Fekete, M.; Szabo, G.; Fodor, E.; Pali, T. E-mail: tpali@nucleus.szbk.u-szeged.hu

2003-12-01

The changes in spice paprika powder induced by ionizing radiation, saturated steam (SS) and their combination were studied as a function of the absorbed radiation dose and the storage time. The SS treatment lead to a decrease in color content (lightening) after 12 weeks of storage, together with the persistence of free radicals and viscosity changes for a longer period. The results suggest that ionizing radiation is a more advantageous method as concerns preservation of the quality of spice paprika.

Reflection technique for thermal mapping of semiconductors

Science.gov (United States)

Walter, Martin J.

1989-06-20

Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

Porous and Nanoporous Semiconductors and Emerging Applications

Directory of Open Access Journals (Sweden)

Helmut Föll

2006-01-01

Full Text Available Pores in single-crystalline semiconductors can be produced in a wide range of geometries and morphologies, including the “nanometer” regime. Porous semiconductors may have properties completely different from the bulk, and metamaterials with, for example, optical properties not encountered in natural materials are emerging. Possible applications of porous semiconductors include various novel sensors, but also more “exotic” uses as, for example, high explosives or electrodes for micro-fuel cells. The paper briefly reviews pore formation (including more applied aspects of large area etching, properties of porous semiconductors, and emerging applications.

Emission and Absorption Entropy Generation in Semiconductors

DEFF Research Database (Denmark)

Reck, Kasper; Varpula, Aapo; Prunnila, Mika

2013-01-01

While emission and absorption entropy generation is well known in black bodies, it has not previously been studied in semiconductors, even though semiconductors are widely used for solar light absorption in modern solar cells [1]. We present an analysis of the entropy generation in semiconductor...... materials due to emission and absorption of electromagnetic radiation. It is shown that the emission and absorption entropy generation reduces the fundamental limit on the efficiency of any semiconductor solar cell even further than the Landsberg limit. The results are derived from purely thermodynamical...

Low Absorbance Measurements

Science.gov (United States)

Harris, T. D.; Williams, A. M.

1983-10-01

The application of low absorption measurements to dilute solute determination requires specific instrumental characteristics. The use of laser intracavity absorption and thermal lens calorimetry to measure concentration is shown. The specific operating parameters that determine sensitivity are delineated along with the limits different measurement strategies impose. Finally areas of improvement in components that would result in improve sensitivity, accuracy, and reliability are discussed. During the past decade, a large number of methods have been developed for measuring the light absorbed by transparent materials. These include measurements on gases, liquids, and solids. The activity has been prompted by a variety of applications and a similar variety of disciplines. In Table 1 some representative examples of these methods is shown along with their published detection limits.1 It is clear that extraordinarily small absorbances can be measured. Most of the methods can be conveniently divided into two groups. These groups are those that measure the transmission of the sample and those that measure the light absorbed by the sample. The light absorbed methods are calorimetric in character. The advantages and disadvantages of each method varies depending on the principal application for which they were developed. The most prevalent motivation has been to characterize the bulk optical properties of transparent materials. Two examples are the development of extremely transparent glasses for use as fiber optic materials and the development of substrates for high power laser operation.

Advances in semiconductor photodetectors for scintillators

International Nuclear Information System (INIS)

Farrell, R.; Olschner, F.; Shah, K.; Squillante, M.R.

1997-01-01

Semiconductors photodetectors have long seemed an attractive alternative for scintillation detection, but only recently have semiconductor photodiodes been proven suitable for some room temperature applications. There are many applications, however for which the performance of standard silicon p-i-n photodiodes is not satisfactory. This article reviews recent progress in two different families of novel semiconductor photodetectors: (1) wide bandgap compound semiconductors and (2) silicon photodetectors with enhanced signal-to-noise ratio. The compounds discussed and compared in this paper are HgI 2 , PbI 2 , InI, TlBr, TlBr 1-x I x and HgBr 1-x I x . The paper will also examine unity gain silicon drift diodes and avalanche photodiodes with maximum room temperature gain greater than 10000. (orig.)

Nitrogen saturation in stream ecosystems.

Science.gov (United States)

Earl, Stevan R; Valett, H Maurice; Webster, Jackson R

2006-12-01

The concept of nitrogen (N) saturation has organized the assessment of N loading in terrestrial ecosystems. Here we extend the concept to lotic ecosystems by coupling Michaelis-Menten kinetics and nutrient spiraling. We propose a series of saturation response types, which may be used to characterize the proximity of streams to N saturation. We conducted a series of short-term N releases using a tracer (15NO3-N) to measure uptake. Experiments were conducted in streams spanning a gradient of background N concentration. Uptake increased in four of six streams as NO3-N was incrementally elevated, indicating that these streams were not saturated. Uptake generally corresponded to Michaelis-Menten kinetics but deviated from the model in two streams where some other growth-critical factor may have been limiting. Proximity to saturation was correlated to background N concentration but was better predicted by the ratio of dissolved inorganic N (DIN) to soluble reactive phosphorus (SRP), suggesting phosphorus limitation in several high-N streams. Uptake velocity, a reflection of uptake efficiency, declined nonlinearly with increasing N amendment in all streams. At the same time, uptake velocity was highest in the low-N streams. Our conceptual model of N transport, uptake, and uptake efficiency suggests that, while streams may be active sites of N uptake on the landscape, N saturation contributes to nonlinear changes in stream N dynamics that correspond to decreased uptake efficiency.

Laser Cooling of 2-6 Semiconductors

Science.gov (United States)

2016-08-12

AFRL-AFOSR-JP-TR-2016-0067 Laser Cooling of II-VI Semiconductors Qihua Xiong NANYANG TECHNOLOGICAL UNIVERSITY Final Report 08/12/2016 DISTRIBUTION A...From - To) 15 May 2013 to 14 May 2016 4. TITLE AND SUBTITLE Laser Cooling of II-VI Semiconductors 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-13-1...13. SUPPLEMENTARY NOTES 14. ABSTRACT The breakthrough of laser cooling in semiconductor has stimulated strong interest in further scaling up towards

Isotopically controlled semiconductors

Energy Technology Data Exchange (ETDEWEB)

Haller, Eugene E.

2006-06-19

The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

Brain oxygen saturation assessment in neonates using T2-prepared blood imaging of oxygen saturation and near-infrared spectroscopy

DEFF Research Database (Denmark)

Alderliesten, Thomas; De Vis, Jill B; Lemmers, Petra Ma

2017-01-01

saturation in the sagittal sinus (R(2 )= 0.49, p = 0.023), but no significant correlations could be demonstrated with frontal and whole brain cerebral blood flow. These results suggest that measuring oxygen saturation by T2-prepared blood imaging of oxygen saturation is feasible, even in neonates. Strong...... sinus. A strong linear relation was found between the oxygen saturation measured by magnetic resonance imaging and the oxygen saturation measured by near-infrared spectroscopy (R(2 )= 0.64, p ..., and magnetic resonance imaging measures of frontal cerebral blood flow, whole brain cerebral blood flow and venous oxygen saturation in the sagittal sinus (R(2 )= 0.71, 0.50, 0.65; p 

Shock absorber in Ignalina NPP

International Nuclear Information System (INIS)

Bulavas, A.; Muralis, J.

1996-09-01

Theoretical calculation and experimental analysis of models of shock absorber in Ignalina NPP is presented. The results obtained from the investigation with model of shock absorber coincide with the theoretical calculation. (author). 2 figs., 3 refs

Semiconductor Nanocrystals for Biological Imaging

Energy Technology Data Exchange (ETDEWEB)

Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

2005-06-28

Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

Liquid metal reactor absorber technology

International Nuclear Information System (INIS)

Pitner, A.L.

1990-10-01

The selection of boron carbide as the reference liquid metal reactor absorber material is supported by results presented for irradiation performance, reactivity worth compatibility, and benign failure consequences. Scram response requirements are met easily with current control rod configurations. The trend in absorber design development is toward larger sized pins with fewer pins per bundle, providing economic savings and improved hydraulic characteristics. Very long-life absorber designs appear to be attainable with the application of vented pin and sodium-bonded concepts. 3 refs., 3 figs

On the definition of absorbed dose

International Nuclear Information System (INIS)

Grusell, Erik

2015-01-01

Purpose: The quantity absorbed dose is used extensively in all areas concerning the interaction of ionizing radiation with biological organisms, as well as with matter in general. The most recent and authoritative definition of absorbed dose is given by the International Commission on Radiation Units and Measurements (ICRU) in ICRU Report 85. However, that definition is incomplete. The purpose of the present work is to give a rigorous definition of absorbed dose. Methods: Absorbed dose is defined in terms of the random variable specific energy imparted. A random variable is a mathematical function, and it cannot be defined without specifying its domain of definition which is a probability space. This is not done in report 85 by the ICRU, mentioned above. Results: In the present work a definition of a suitable probability space is given, so that a rigorous definition of absorbed dose is possible. This necessarily includes the specification of the experiment which the probability space describes. In this case this is an irradiation, which is specified by the initial particles released and by the material objects which can interact with the radiation. Some consequences are discussed. Specific energy imparted is defined for a volume, and the definition of absorbed dose as a point function involves the specific energy imparted for a small mass contained in a volume surrounding the point. A possible more precise definition of this volume is suggested and discussed. Conclusions: The importance of absorbed dose motivates a proper definition, and one is given in the present work. No rigorous definition has been presented before. - Highlights: • A stringent definition of absorbed dose is given. • This requires the definition of an irradiation and a suitable probability space. • A stringent definition is important for an understanding of the concept absorbed dose

Progress in semiconductor drift detectors

International Nuclear Information System (INIS)

Rehak, P.; Walton, J.; Gatti, E.

1985-01-01

Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

Photoelectronic properties of semiconductors

CERN Document Server

Bube, Richard H

1992-01-01

The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

Space Charge Saturated Sheath Regime and Electron Temperature Saturation in Hall Thrusters

International Nuclear Information System (INIS)

Raitses, Y.; Staack, D.; Smirnov, A.; Fisch, N.J.

2005-01-01

Secondary electron emission in Hall thrusters is predicted to lead to space charge saturated wall sheaths resulting in enhanced power losses in the thruster channel. Analysis of experimentally obtained electron-wall collision frequency suggests that the electron temperature saturation, which occurs at high discharge voltages, appears to be caused by a decrease of the Joule heating rather than by the enhancement of the electron energy loss at the walls due to a strong secondary electron emission

Semiconductor sensors

International Nuclear Information System (INIS)

Hartmann, Frank

2011-01-01

Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

Squeezing in an injection-locked semiconductor laser

Science.gov (United States)

Inoue, S.; Machida, S.; Yamamoto, Y.; Ohzu, H.

1993-09-01

The intensity-noise properties of an injection-locked semiconductor laser were studied experimentally. The constant-current-driven semiconductor laser producing the amplitude-squeezed state whose intensity noise was reduced below the standard quantum limit (SQL) by 0.72 dB was injection-locked by an external master laser. The measured intensity-noise level of the injection-locked semiconductor laser was 0.91 dB below the SQL. This experimental result indicates that a phase-coherent amplitude-squeezed state or squeezed vacuum state together with a reference local oscillator wave can be generated directly by semiconductor laser systems.

Saturated Zone Colloid-Facilitated Transport

International Nuclear Information System (INIS)

Wolfsberg, A.; Reimus, P.

2001-01-01

The purpose of the Saturated Zone Colloid-Facilitated Transport Analysis and Modeling Report (AMR), as outlined in its Work Direction and Planning Document (CRWMS MandO 1999a), is to provide retardation factors for colloids with irreversibly-attached radionuclides, such as plutonium, in the saturated zone (SZ) between their point of entrance from the unsaturated zone (UZ) and downgradient compliance points. Although it is not exclusive to any particular radionuclide release scenario, this AMR especially addresses those scenarios pertaining to evidence from waste degradation experiments, which indicate that plutonium and perhaps other radionuclides may be irreversibly attached to colloids. This report establishes the requirements and elements of the design of a methodology for calculating colloid transport in the saturated zone at Yucca Mountain. In previous Total Systems Performance Assessment (TSPA) analyses, radionuclide-bearing colloids were assumed to be unretarded in their migration. Field experiments in fractured tuff at Yucca Mountain and in porous media at other sites indicate that colloids may, in fact, experience retardation relative to the mean pore-water velocity, suggesting that contaminants associated with colloids should also experience some retardation. Therefore, this analysis incorporates field data where available and a theoretical framework when site-specific data are not available for estimating plausible ranges of retardation factors in both saturated fractured tuff and saturated alluvium. The distribution of retardation factors for tuff and alluvium are developed in a form consistent with the Performance Assessment (PA) analysis framework for simulating radionuclide transport in the saturated zone. To improve on the work performed so far for the saturated-zone flow and transport modeling, concerted effort has been made in quantifying colloid retardation factors in both fractured tuff and alluvium. The fractured tuff analysis used recent data

PHYSICAL CONDITIONS IN THE ULTRAVIOLET ABSORBERS OF IRAS F22456-5125

International Nuclear Information System (INIS)

Dunn, Jay P.; Crenshaw, D. Michael; Trippe, M. L.; Kraemer, S. B.

2010-01-01

We present the ultraviolet (UV) and X-ray spectra observed with the Far Ultraviolet Spectroscopic Explorer (FUSE) and the XMM-Newton satellite, respectively, of the low-z Seyfert 1 galaxy IRAS F22456 - 5125. This object shows absorption from five distinct, narrow kinematic components that span a significant range in velocity (∼0 to -700 km s -1 ) and ionization (Lyman series, C III, N III, and O VI). We also show that three of the five kinematic components in these lines appear to be saturated in Lyβ λ1026 and that all five components show evidence of saturation in the O VI doublet lines λλ1032, 1038. Further, all five components show evidence for partial covering due to the absorption seen in the O VI doublet. This object is peculiar because it shows no evidence for corresponding X-ray absorption to the UV absorption in the X-ray spectrum, which violates the 1:1 correlation known for low-z active galactic nuclei (AGNs). We perform photoionization modeling of the UV absorption lines and predict that the O VII column density should be small, which would produce little to no absorption in agreement with the X-ray observation. We also examine the UV variability of the continuum flux for this object (an increase of a factor of 6). As the absorption components lack variability, we find a lower limit of ∼20 kpc for the distance for the absorbers from the central AGN.

Burnable neutron absorbers

International Nuclear Information System (INIS)

Radford, K.C.; Carlson, W.G.

1985-01-01

This patent deals with the fabrication of pellets for neutron absorber rods. Such a pellet includes a matrix of a refractory material which may be aluminum or zirconium oxide, and a burnable poison distributed throughout the matrix. The neutron absorber material may consist of one or more elements or compounds of the metals boron, gadolinium, samarium, cadmium, europium, hafnium, dysprosium and indium. The method of fabricating pellets of these materials outlined in this patent is designed to produce pores or voids in the pellets that can be used to take up the expansion of the burnable poison and to absorb the helium gas generated. In the practice of this invention a slurry of Al 2 O 3 is produced. A hard binder is added and the slurry and binder are spray dried. This powder is mixed with dry B 4 C powder, forming a homogeneous mixture. This mixture is pressed into green tubes which are then sintered. During sintering the binder volatilizes leaving a ceramic with nearly spherical high-density regions of

Absorbed dose thresholds and absorbed dose rate limitations for studies of electron radiation effects on polyetherimides

Science.gov (United States)

Long, Edward R., Jr.; Long, Sheila Ann T.; Gray, Stephanie L.; Collins, William D.

1989-01-01

The threshold values of total absorbed dose for causing changes in tensile properties of a polyetherimide film and the limitations of the absorbed dose rate for accelerated-exposure evaluation of the effects of electron radiation in geosynchronous orbit were studied. Total absorbed doses from 1 kGy to 100 MGy and absorbed dose rates from 0.01 MGy/hr to 100 MGy/hr were investigated, where 1 Gy equals 100 rads. Total doses less than 2.5 MGy did not significantly change the tensile properties of the film whereas doses higher than 2.5 MGy significantly reduced elongation-to-failure. There was no measurable effect of the dose rate on the tensile properties for accelerated electron exposures.

Waveguide based external cavity semiconductor lasers

NARCIS (Netherlands)

Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

2012-01-01

We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

Carrier dynamics in inhomogeneously broadened InAs/AlGaInAs/InP quantum-dot semiconductor optical amplifiers

Energy Technology Data Exchange (ETDEWEB)

Karni, O., E-mail: oulrik@tx.technion.ac.il; Mikhelashvili, V.; Eisenstein, G. [Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Kuchar, K. J. [Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Institute of Physics, Wroclaw University of Technology, Wroclaw 50-370 (Poland); Capua, A. [Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel); IBM Almaden Research Center, San Jose, 95120 California (United States); Sęk, G.; Misiewicz, J. [Institute of Physics, Wroclaw University of Technology, Wroclaw 50-370 (Poland); Ivanov, V.; Reithmaier, J. P. [Technische Physik, Institute of Nanostructure Technology and Analytics, CINSaT, University of Kassel, Kassel D-34132 (Germany)

2014-03-24

We report on a characterization of fundamental gain dynamics in recently developed InAs/InP quantum-dot semiconductor optical amplifiers. Multi-wavelength pump-probe measurements were used to determine gain recovery rates, following a powerful optical pump pulse, at various wavelengths for different bias levels and pump excitation powers. The recovery was dominated by coupling between the electronic states in the quantum-dots and the high energy carrier reservoir via capture and escape mechanisms. These processes determine also the wavelength dependencies of gain saturation depth and the asymptotic gain recovery level. Unlike quantum-dash amplifiers, these quantum-dots exhibit no instantaneous gain response, confirming their quasi zero-dimensional nature.

Market survey of semiconductors

International Nuclear Information System (INIS)

Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

1977-06-01

Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

Fundamentals of semiconductor lasers

CERN Document Server

Numai, Takahiro

2015-01-01

This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

Assessing species saturation: conceptual and methodological challenges.

Science.gov (United States)

Olivares, Ingrid; Karger, Dirk N; Kessler, Michael

2018-05-07

Is there a maximum number of species that can coexist? Intuitively, we assume an upper limit to the number of species in a given assemblage, or that a lineage can produce, but defining and testing this limit has proven problematic. Herein, we first outline seven general challenges of studies on species saturation, most of which are independent of the actual method used to assess saturation. Among these are the challenge of defining saturation conceptually and operationally, the importance of setting an appropriate referential system, and the need to discriminate among patterns, processes and mechanisms. Second, we list and discuss the methodological approaches that have been used to study species saturation. These approaches vary in time and spatial scales, and in the variables and assumptions needed to assess saturation. We argue that assessing species saturation is possible, but that many studies conducted to date have conceptual and methodological flaws that prevent us from currently attaining a good idea of the occurrence of species saturation. © 2018 Cambridge Philosophical Society.

Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

Energy Technology Data Exchange (ETDEWEB)

Gadzhiyev, I. M., E-mail: idris.intop@mail.ru; Buyalo, M. S. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Gubenko, A. E. [Innolume GmbH (Germany); Egorov, A. Yu.; Usikova, A. A.; Il’inskaya, N. D.; Lyutetskiy, A. V.; Zadiranov, Yu. M.; Portnoi, E. L. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

2016-06-15

The passive Q-switching and mode-locking modes are implemented in two-section lasers with three quantum wells. It is demonstrated that raising the reverse bias on the absorbing section changes its spectral and dynamic properties and, accordingly, leads to a change from the Q-switching mode to mode-locking. The pulse-repetition frequency in the mode-locking mode is 75 GHz, with the product of the pulse duration by the spectrum bandwidth being 0.49, which is close to the theoretical limit. It is shown that, in structures with three quantum wells, strong absorption at the lasing wavelength gives rise to a photocurrent across a section of the saturable absorber, which is sufficient for compensation of the applied bias.

Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

International Nuclear Information System (INIS)

Gadzhiyev, I. M.; Buyalo, M. S.; Gubenko, A. E.; Egorov, A. Yu.; Usikova, A. A.; Il’inskaya, N. D.; Lyutetskiy, A. V.; Zadiranov, Yu. M.; Portnoi, E. L.

2016-01-01

The passive Q-switching and mode-locking modes are implemented in two-section lasers with three quantum wells. It is demonstrated that raising the reverse bias on the absorbing section changes its spectral and dynamic properties and, accordingly, leads to a change from the Q-switching mode to mode-locking. The pulse-repetition frequency in the mode-locking mode is 75 GHz, with the product of the pulse duration by the spectrum bandwidth being 0.49, which is close to the theoretical limit. It is shown that, in structures with three quantum wells, strong absorption at the lasing wavelength gives rise to a photocurrent across a section of the saturable absorber, which is sufficient for compensation of the applied bias.

Dynamic testing of airplane shock-absorbing struts

Science.gov (United States)

Langer, P; Thome, W

1932-01-01

Measurement of perpendicular impacts of a landing gear with different shock-absorbing struts against the drum testing stand. Tests were made with pneumatic shock absorbers having various degrees of damping, liquid shock absorbers, steel-spring shock absorbers and rigid struts. Falling tests and rolling tests. Maximum impact and gradual reduction of the impacts in number and time in the falling tests. Maximum impact and number of weaker impacts in rolling tests.

Liquid absorber experiments in ZED-2

International Nuclear Information System (INIS)

McDonnell, F.N.

1975-07-01

A set of liquid absorber experiments was performed in ZED-2 to provide data with which to test the adequacy of calculational methods for zone controller and refuelling studies associated with advanced reactor concepts. The absorber consisted of a full length aluminum tube, containing either i)H 2 O, ii)H 2 O + boron (2.5 mg/ml) or iii)H 2 O + boron (8.0 mg/ml). The tube was suspended vertically at interstitial or in-channel locations. A U-tube absorber was also simulated using two absorber tubes with appropriate spacers. Experiments were carried out at two different square lattice pitches, 22.86 and 27.94 cm. Measurements were made of the reactivity effects of the absorbers and, in some cases, of the detailed flux distribution near the perturbation. The results from one calculational method, the source-sink approach, were compared with the data from selected experiments. (author)

A chiral microwave absorbing absorbent of Fe–CoNiP coated on spirulina

Energy Technology Data Exchange (ETDEWEB)

Xu, Yonggang, E-mail: xuyonggang221@163.com [Science and Technology on Electromagnetic Scattering Laboratory, Shanghai, 200438 (China); Yuan, Liming [Science and Technology on Electromagnetic Scattering Laboratory, Shanghai, 200438 (China); Zhang, Deyuan [School of Mechanical Engineering and Automation, Beihang University, Beijing, 100191 (China)

2015-11-15

A chiral bio-absorbent of Fe–CoNiP coated on the spirulina was fabricated by the electroless and chemical vapor decomposition. The scanning electron microscopy (SEM) was used to evaluate the spirulina cells particle morphology. X-ray diffraction (XRD) patterns were done to analyze the particle crystal grain structure. The permittivity and permeability was measured by a vector network analyzer in frequency 8–18 GHz, and the reflection loss (RL) was calculated. The results showed the carbonyl iron particles (CIPs) and CoNiP were bonded to the spirulina surface, the permittivity and permeability could be enlarged as Fe films coated on the particles compared with the CoNiP spirulina, it was attributed to the excellent electromagnetic property of CIPs. The chiral Fe–CoNiP composites had a better absorbing property at 8–18 GHz than the CoNiP spirulina composite, the RL was −16.26 dB at 10.48 GHz, the absorbing band was 9.5–11.5 GHz of RL less than −10 dB, which indicated the Fe–CoNiP spirulina could be an effective absorbent used in 8–18 GHz. - Highlights: • Absorbers filled with Fe–CoNiP coating on the spirulina were fabricated. • The permittivity and permeability increased as CIPs coated. • The Fe material enhanced the electromagnetic property. • The spirulina coated Fe–CoNiP was effective in 8–18 GHz.

Absorber rod drive for nuclear reactors

International Nuclear Information System (INIS)

Acher, H.

1985-01-01

The invention concerns a further addition to the invention of DE 33 42 830 A1. The free contact of the hollow piston with the nut due to hydraulic pressure is replaced by a hydraulic or spring attachment. The pressure system required to produce the hydraulic pressure is therefore omitted, and the electrical power required for driving the pump or the mass flow is also omitted. The absorber rod slotted along its longitudinal axis is replaced by an absorber rod, in the longitudinal axis of which a hollow piston is connected together with the absorber rod. This makes the absorber rod more stable, and assembly is simplified. (orig./HP) [de

Misconceptions in Reporting Oxygen Saturation

NARCIS (Netherlands)

Toffaletti, John; Zijlstra, Willem G.

2007-01-01

BACKGROUND: We describe some misconceptions that have become common practice in reporting blood gas and cooximetry results. In 1980, oxygen saturation was incorrectly redefined in a report of a new instrument for analysis of hemoglobin (Hb) derivatives. Oxygen saturation (sO(2)) was redefined as the

Molecular semiconductors photoelectrical properties and solar cells

CERN Document Server

Rees, Ch

1985-01-01

During the past thirty years considerable efforts have been made to design the synthesis and the study of molecular semiconductors. Molecular semiconductors - and more generally molecular materials - involve interactions between individual subunits which can be separately synthesized. Organic and metallo-organic derivatives are the basis of most of the molecular materials. A survey of the literature on molecular semiconductors leaves one rather confused. It does seem to be very difficult to correlate the molecular structure of these semiconductors with their experimental electrical properties. For inorganic materials a simple definition delimits a fairly homogeneous family. If an inorganic material has a conductivity intermediate between that of an 12 1 1 3 1 1 insulator « 10- n- cm- ) and that of a metal (> 10 n- cm- ), then it is a semiconductor and will exhibit the characteristic properties of this family, such as junction formation, photoconductivity, and the photovoltaic effect. For molecular compounds,...

Landsliding in partially saturated materials

Science.gov (United States)

Godt, J.W.; Baum, R.L.; Lu, N.

2009-01-01

[1] Rainfall-induced landslides are pervasive in hillslope environments around the world and among the most costly and deadly natural hazards. However, capturing their occurrence with scientific instrumentation in a natural setting is extremely rare. The prevailing thinking on landslide initiation, particularly for those landslides that occur under intense precipitation, is that the failure surface is saturated and has positive pore-water pressures acting on it. Most analytic methods used for landslide hazard assessment are based on the above perception and assume that the failure surface is located beneath a water table. By monitoring the pore water and soil suction response to rainfall, we observed shallow landslide occurrence under partially saturated conditions for the first time in a natural setting. We show that the partially saturated shallow landslide at this site is predictable using measured soil suction and water content and a novel unified effective stress concept for partially saturated earth materials. Copyright 2009 by the American Geophysical Union.

Recipe for residual oil saturation determination

Energy Technology Data Exchange (ETDEWEB)

Guillory, A.J.; Kidwell, C.M.

1979-01-01

In 1978, Shell Oil Co., in conjunction with the US Department of Energy, conducted a residual oil saturation study in a deep, hot high-pressured Gulf Coast Reservoir. The work was conducted prior to initiation of CO/sub 2/ tertiary recovery pilot. Many problems had to be resolved prior to and during the residual oil saturation determination. The problems confronted are outlined such that the procedure can be used much like a cookbook in designing future studies in similar reservoirs. Primary discussion centers around planning and results of a log-inject-log operation used as a prime method to determine the residual oil saturation. Several independent methods were used to calculate the residual oil saturation in the subject well in an interval between 12,910 ft (3935 m) and 12,020 ft (3938 m). In general, these numbers were in good agreement and indicated a residual oil saturation between 22% and 24%. 10 references.

Experimental demonstration on the ultra-low source/drain resistance by metal-insulator-semiconductor contact structure in In0.53Ga0.47As field-effect transistors

Directory of Open Access Journals (Sweden)

M.-H. Liao

2013-09-01

Full Text Available In this work, we demonstrate the ultra-low contact resistivity of 6.7 × 10−9 Ω/cm2 by inserting 0.6-nm-ZnO between Al and InGaAs(Si: 1.5 × 1019 cm−3. The metal-insulator-semiconductor tunneling diode with 0.6-nm-ZnO exhibits nearly zero (0.03 eV barrier height. We apply this contact structure on the source/drain of implant-free In0.53Ga0.47As quantum-well metal-oxide-semiconductor field- effect transistors. The excellent on-state performance such as saturation drain current of 3 × 10−4 A/μm and peak transconductance of 1250 μS/μm is obtained which is attributed to the ultra-low source/drain resistance of 190 Ω-μm.

Cibicidodes Pachyderma B/Ca as a Shalow Water Carbonate Saturation State Proxy

Science.gov (United States)

Wojcieszek, D. E.; Flower, B. P.; Moyer, R. P.; Byrne, R. H.

2012-12-01

Since the industrial revolution, the oceans have absorbed about 25% of anthropogenic CO2 emissions to the atmosphere, leading to a decrease in seawater pH (termed ocean acidification: OA) as well as many associated effects, including decreased saturation states. Assessment of the effects of OA on marine ecosystems is presently based on chemistry and its impact on biota over much longer time scales can provide essential context for likely future consequences of OA. Reliable oceanic paleo-proxies for influential chemical variables such as pH and carbonate saturation state are crucial components for examining ancient environments affected by OA. Addition of CO2 to seawater leads to not only decreases in seawater pH and saturation state, but also the extent to which boron (B) is incorporated into CaCO3 during biotic calcification. Consequently, the abundance of B in calcite could reflect pH and/or saturation state of the water in which calcification occurred. Recent studies indicate a linear relationship between the ratio of boron to calcium (B/Ca) in benthic foraminifera shells ( Cibicidoides wuellerstorfi, C. mundulus) and the degree of carbonate saturation (Δ[CO32-]), defined as a difference between [CO32-]in situ and [CO32-]saturation. However, the observed relationship between B/Ca and Δ[CO32-] was only established for depths >1000m. Thus, since OA most immediately affects the upper 1000 m of the water column, a reliable shallow water (chemistry proxy is desirable. We are testing the utility of B/Ca in Cibicidoides pachyderma as a shallow water Δ[CO32-] proxy. C. pachyderma is an epibenthic species and therefore records the composition of bottom, rather than interstitial, waters. It usually inhabits depths between 200 and 1000 m, and is a common species in the Gulf of Mexico. The gently sloping West Florida Shelf (WFS) is an excellent setting for this kind of study as it provides a full range of depths habitable by C.pachyderma. Nine surface sediment samples

Tracking Controller for Intrinsic Output Saturated Systems in Presence of Amplitude and Rate Input Saturations

DEFF Research Database (Denmark)

Chater, E.; Giri, F.; Guerrero, Josep M.

2014-01-01

We consider the problem of controlling plants that are subject to multiple saturation constraints. Especially, we are interested in linear systems whose input is subject to amplitude and rate constraints of saturation type. Furthermore, the considered systems output is also subject to an intrinsi...

Semiconductor quantum-dot lasers and amplifiers

DEFF Research Database (Denmark)

Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

2002-01-01

-power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

Semiconductors: A 21st Century Social Studies Topic.

Science.gov (United States)

Sunal, Cynthia

2000-01-01

Addresses the reasons for exploring semiconductor technology and organic semiconductors in schools for either middle school or secondary students in an interdisciplinary social studies and science environment. Provides background information on transistors and semiconductors. Offers three social studies lessons and related science lessons if an…

Radiation effects in semiconductors

CERN Document Server

2011-01-01

There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

The nonlinear carrier transport in a bipolar semiconductor sample

International Nuclear Information System (INIS)

Konin, A

2008-01-01

A theory of formation of the voltage across a bipolar semiconductor sample due to the current flow accounting for the energy band bending near the semiconductor surfaces is presented. The non-equilibrium space charge layers near the sample surfaces and the boundary conditions in the real metal-semiconductor junction have been taken into account. It is shown that the voltage-current relation of a thin sample at weak injection differs essentially from the classical Ohm's law and becomes nonlinear for certain semiconductor surface parameters. Complex voltage-current relations and the photo-induced electromotive force measurements allow determining the surface recombination rate in the real metal-semiconductor junction and the semiconductor surface potential

Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser; Construccion de un amplificador optico de semiconductor a partir de un laser de semiconductor Fabry-Perot

Energy Technology Data Exchange (ETDEWEB)

Garcia, E.; Soto, H.; Marquez, H.; Valles V, N. [Departamento de Electronica y Telecomunicaciones, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada. Km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, Baja California (Mexico)

2000-07-01

A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

Progress towards a semiconductor Compton camera for prompt gamma imaging during proton beam therapy for range and dose verification

Science.gov (United States)

Gutierrez, A.; Baker, C.; Boston, H.; Chung, S.; Judson, D. S.; Kacperek, A.; Le Crom, B.; Moss, R.; Royle, G.; Speller, R.; Boston, A. J.

2018-01-01

The main objective of this work is to test a new semiconductor Compton camera for prompt gamma imaging. Our device is composed of three active layers: a Si(Li) detector as a scatterer and two high purity Germanium detectors as absorbers of high-energy gamma rays. We performed Monte Carlo simulations using the Geant4 toolkit to characterise the expected gamma field during proton beam therapy and have made experimental measurements of the gamma spectrum with a 60 MeV passive scattering beam irradiating a phantom. In this proceeding, we describe the status of the Compton camera and present the first preliminary measurements with radioactive sources and their corresponding reconstructed images.

Is There a Better Semiconductor Firm in Taiwan?

Directory of Open Access Journals (Sweden)

Cheng-Wen LEE

2017-06-01

Full Text Available The authors investigate the firm value of semiconductor industry in Taiwan in order to differentiate between outstanding semiconductor company and weak semiconductor company. The authors use GAP which is analytical tool to perform four steps: the original maps, sorting maps with clustering trees, summary sufficient maps, and sediment maps. The findings offer a good instruction for policymakers to make related policies in semiconductor firms. Additionally, the paper helps to find firms needed to be reformed through classification by GAP.

Low temperature anomaly of light stimulated magnetization and heat capacity of the 1D diluted magnetic semiconductors

Science.gov (United States)

Geffe, Chernet Amente

2018-03-01

This article reports magnetization and specific heat capacity anomalies in one dimensional diluted magnetic semiconductors observed at very low temperatures. Based on quantum field theory double time temperature dependent Green function technique is employed to evaluate magnon dispersion and the time correlation function. It is understood that magnon-photon coupling and magnetic impurity concentration controls both, such that near absolute temperature magnetization is nearly zero and abruptly increase to saturation level with decreasing magnon-photon coupling strength. We also found out dropping of magnetic specific heat capacity as a result of increase in magnetic impurity concentration x, perhaps because of inter-band disorder that would suppress the enhancement of density of spin waves.

Low temperature anomaly of light stimulated magnetization and heat capacity of the 1D diluted magnetic semiconductors

Directory of Open Access Journals (Sweden)

Chernet Amente Geffe

2018-03-01

Full Text Available This article reports magnetization and specific heat capacity anomalies in one dimensional diluted magnetic semiconductors observed at very low temperatures. Based on quantum field theory double time temperature dependent Green function technique is employed to evaluate magnon dispersion and the time correlation function. It is understood that magnon-photon coupling and magnetic impurity concentration controls both, such that near absolute temperature magnetization is nearly zero and abruptly increase to saturation level with decreasing magnon-photon coupling strength. We also found out dropping of magnetic specific heat capacity as a result of increase in magnetic impurity concentration x, perhaps because of inter-band disorder that would suppress the enhancement of density of spin waves.

Rate equation analysis and non-Hermiticity in coupled semiconductor laser arrays

Science.gov (United States)

Gao, Zihe; Johnson, Matthew T.; Choquette, Kent D.

2018-05-01