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Sample records for semiconductor saturable absorber

  1. Semiconductor saturable absorbers for ultrafast terahertz signals

    DEFF Research Database (Denmark)

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    2010-01-01

    states, due to conduction band onparabolicity and scattering into satellite valleys in strong THz fields. Saturable absorber parameters, such as linear and nonsaturable transmission, and saturation fluence, are extracted by fits to a classic saturable absorber model. Further, we observe THz pulse......We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP, and Ge in the terahertz THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of semiconductors at high electron momentum...

  2. Semiconductor saturable absorbers for ultrafast THz signals

    DEFF Research Database (Denmark)

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    We demonstrate saturable absorber behavior of n-type semiconductors in the THz frequency range using nonlinear THz spectroscopy. Further, we observe THz pulse shortening and increase of the group refractive index at high field strengths.......We demonstrate saturable absorber behavior of n-type semiconductors in the THz frequency range using nonlinear THz spectroscopy. Further, we observe THz pulse shortening and increase of the group refractive index at high field strengths....

  3. Microscopic analysis of saturable absorbers: Semiconductor saturable absorber mirrors versus graphene

    Energy Technology Data Exchange (ETDEWEB)

    Hader, J.; Moloney, J. V. [Nonlinear Control Strategies, Inc., 3542 N. Geronimo Ave., Tucson, Arizona 85705 (United States); College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States); Yang, H.-J.; Scheller, M. [College of Optical Sciences, University of Arizona, Tucson, Arizona 85721 (United States); Koch, S. W. [Department of Physics and Materials Sciences Center, Philipps Universität Marburg, Renthof 5, 35032 Marburg (Germany)

    2016-02-07

    Fully microscopic many-body calculations are used to study the influence of strong sub-picosecond pulses on the carrier distributions and corresponding optical response in saturable absorbers used for mode-locking—semiconductor (quantum well) saturable absorber mirrors (SESAMs) and single layer graphene based saturable absorber mirrors (GSAMs). Unlike in GSAMs, the saturation fluence and recovery time in SESAMs show a strong spectral dependence. While the saturation fluence in the SESAM is minimal at the excitonic bandgap, the optimal recovery time and least pulse distortion due to group delay dispersion are found for excitation higher in the first subband. For excitation near the SESAM bandgap, the saturation fluence is about one tenth of that in the GSAM. At energies above the bandgap, the fluences in both systems become similar. A strong dependence of the saturation fluence on the pulse width in both systems is caused by carrier relaxation during the pulse. The recovery time in graphene is found to be about two to four times faster than that in the SESAMs. The occurrence of negative differential transmission in graphene is shown to be caused by dopant related carriers. In SESAMs, a negative differential transmission is found when exciting below the excitonic resonance where excitation induced dephasing leads to an enhancement of the absorption. Comparisons of the simulation data to the experiment show a very good quantitative agreement.

  4. All-optical packet envelope detection using a slow semiconductor saturable absorber gate and a semiconductor optical amplifier

    NARCIS (Netherlands)

    Porzi, C.; Fresi, F.; Poti, L.; Bogoni, A.; Guina, M.; Orsila, L.; Okhotnikov, O.; Calabretta, N.

    2008-01-01

    Abstract—We propose a simple and effective scheme for alloptical packet envelope detection (AO-PED), exploiting a slow saturable absorber-based vertical cavity semiconductor gate and a semiconductor optical amplifier. A high extinction ratio of 15 dB was measured for the recovered envelope signal.

  5. Passively Q-switched dual-wavelength thulium-doped fiber laser based on a multimode interference filter and a semiconductor saturable absorber

    Science.gov (United States)

    Wang, M.; Huang, Y. J.; Ruan, S. C.

    2018-04-01

    In this paper, we have demonstrated a theta cavity passively Q-switched dual-wavelength fiber laser based on a multimode interference filter and a semiconductor saturable absorber. Relying on the properties of the fiber theta cavity, the laser can operate unidirectionally without an optical isolator. A semiconductor saturable absorber played the role of passive Q-switch while a section of single-mode-multimode-single-mode fiber structure served as an multimode interference filter and was used for selecting the lasing wavelengths. By suitably manipulating the polarization controller, stable dual-wavelength Q-switched operation was obtained at ~1946.8 nm and ~1983.8 nm with maximum output power and minimum pulse duration of ~47 mW and ~762.5 ns, respectively. The pulse repetition rate can be tuned from ~20.2 kHz to ~79.7 kHz by increasing the pump power from ~2.12 W to ~5.4 W.

  6. Effect of thermal management on the properties of saturable absorber mirrors in high-power mode-locked semiconductor disk lasers

    International Nuclear Information System (INIS)

    Rantamäki, Antti; Lyytikäinen, Jari; Jari Nikkinen; Okhotnikov, Oleg G

    2011-01-01

    The thermal management of saturable absorbers is shown to have a critical impact on a high-power mode-locked disk laser. The absorber with efficient heat removal makes it possible to generate ultrashort pulses with high repetition rates and high power density.

  7. Mid-infrared Fe2+:ZnSe semiconductor saturable absorber mirror for passively Q-switched Er3+-doped ZBLAN fiber laser

    Directory of Open Access Journals (Sweden)

    Shougui Ning

    2018-02-01

    Full Text Available A mid-infrared (mid-IR semiconductor saturable absorber mirror (SESAM based on Fe2+:ZnSe for passively Q-switched Er3+-doped ZBLAN fiber laser has been demonstrated. Fe2+:ZnSe SESAM was fabricated by electron beam evaporation method. Fe2+ was innovatively doped into the reflective Bragg stack, in which ZnSe layer served as both doped matrix and high refractive layer during the fabricating process. By using the Fe2+:ZnSe SESAM, stable passively Q-switched pulses with the minimum pulse width of 0.43 μs under a repetition rate of 160.82 kHz were obtained. The recorded maximum average output power of 873 mW with a peak power of 12.59 W and pulse energy of 5.43 μJ were achieved. The results demonstrated a new method for fabricating Fe2+:ZnSe SESAM, which can be used in compact mid-IR Q-switched fiber laser.

  8. Ultrafast THz Saturable Absorption in Doped Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, Matthias C.

    2011-01-01

    We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.......We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields....

  9. Ultrafast THz Saturable Absorption in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, Matthias C.

    2011-01-01

    We demonstrate THz saturable absorption in n-doped semiconductors GaAs, GaP, and Ge in a nonlinear THz time-domain spectroscopy experiment. Saturable absorption is caused by sample conductivity modulation due to electron heating and satellite valley scattering in the field of a strong THz pulse....

  10. Bistability By Self-Reflection In A Saturable Absorber

    Science.gov (United States)

    Roso-Franco, Luis

    1987-01-01

    Propagation of laser light through a saturable absorber is theoretically studied. Computed steady state solutions of the Maxwell equations describing the unidimensional propagation of a plane monochromatic wave without introducing the slowly-varying envelope approximation are presented showing how saturation effects can influence the absorption of the field. At a certain range of refractive index and extintion coefficients, computed solutions display a very susprising behaviour, and a self-reflected wave appears inside the absorber. This can be useful for a new kind of biestable device, similar to a standard bistable cavity but with the back mirror self-induced by the light.

  11. Dynamical study of a laser with a saturable absorber

    Energy Technology Data Exchange (ETDEWEB)

    Dignowity, D; RamIrez, R [Centro de Investigaciones en Optica, Loma del Bosque 115, Col. Lomas del Campestre, 37150, Leon, Guanajuato (Mexico)

    2005-01-01

    The study of a laser including a saturable absorber is presented. The non-linear system describing the complex dynamics of the laser is presented. The laser is shown to operate in several regimes depending on the parameters used. It is also shown how the control of the laser is possible depending on the operating regime parameters.

  12. Gaseous saturable absorbers for the Helios CO2 laser system

    International Nuclear Information System (INIS)

    Haglund, R.F. Jr.; Nowak, A.V.; Czuchlewski, S.J.

    1981-01-01

    Saturable absorbers are widely used to suppress parasitic oscillations in large-aperture, high-power CO 2 fusion-laser systems. We report experimental results on SF 6 -based gaseous saturable absorbers used for parasitic suppression in the eight-beam, 10 kJ Helios fusion-laser system. The gas mix effectively quenches self-lasing in the 9 and 10 μm branches of the CO 2 laser spectrum while simultaneously allowing high transmission of subnanosecond multiwavelength pulses for target-irradiation experiments. The gas isolator now in use consists of SF 6 and the additional fluorocarbons: 1, 1-difluoroethane (FC-152a); dichlorodifluoromethane (FC-12); chloropentafluoroethane (FC-115); 1,1-dichloro 2,2-difluoroethylene (FC-1112a); chlorotrifluoroethylene (FC-1113); and perfluorocyclobutane (FC-C318). The saturation of the mix was studied as a function of incident fluence, pressure, cell length, and incident wavelength. Experimental results are presented on the saturation properties of pure SF 6 and FC-152a and compared with the saturation behavior of CO 2 at 400 0 C

  13. Fabrication of PDMS/SWCNT thin films as saturable absorbers

    International Nuclear Information System (INIS)

    Hernandez-Romano, I; Sanchez-Mondragon, J J; Davila-Rodriguez, J; Delfyett, P J; May-Arrioja, D A

    2011-01-01

    We present a novel technique to fabricate a saturable absorber thin film based on Polydimethylsiloxane doped with Single Wall Carbon Nanotubes. Using this film a passive mode-locked fiber laser in a standard ring cavity configuration was built by inserting the film between two angled connectors. Self-starting passively mode-locked laser operation was easily observed. The generated pulses have a width of 1.26 ps at a repetition rate of 22.7 MHz with an average power of 4.89 mW.

  14. Gain dynamics and saturation in semiconductor quantum dot amplifiers

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Mørk, Jesper; Hvam, Jørn Märcher

    2004-01-01

    Quantum dot (QD)-based semiconductor optical amplifiers offer unique properties compared with conventional devices based on bulk or quantum well material. Due to the bandfilling properties of QDs and the existence of a nearby reservoir of carriers in the form of a wetting layer, QD semiconductor...... optical amplifiers may be operated in regimes of high linearity, i.e. with a high saturation power, but can also show strong and fast nonlinearities by breaking the equilibrium between discrete dot states and the continuum of wetting layer states. In this paper, we analyse the interplay of these two...

  15. Transition-metal dichalcogenides heterostructure saturable absorbers for ultrafast photonics.

    Science.gov (United States)

    Chen, Hao; Yin, Jinde; Yang, Jingwei; Zhang, Xuejun; Liu, Mengli; Jiang, Zike; Wang, Jinzhang; Sun, Zhipei; Guo, Tuan; Liu, Wenjun; Yan, Peiguang

    2017-11-01

    In this Letter, high-quality WS 2 film and MoS 2 film were vertically stacked on the tip of a single-mode fiber in turns to form heterostructure (WS 2 -MoS 2 -WS 2 )-based saturable absorbers with all-fiber integrated features. Their nonlinear saturable absorption properties were remarkable, such as a large modulation depth (∼16.99%) and a small saturable intensity (6.23  MW·cm -2 ). Stable pulses at 1.55 μm with duration as short as 296 fs and average power as high as 25 mW were obtained in an erbium-doped fiber laser system. The results demonstrate that the proposed heterostructures own remarkable nonlinear optical properties and offer a platform for adjusting nonlinear optical properties by stacking different transition-metal dichalcogenides or modifying the thickness of each layer, paving the way for engineering functional ultrafast photonics devices with desirable properties.

  16. Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers

    DEFF Research Database (Denmark)

    Thompson, M.G.; Marinelli, C.; Chu, Y.

    Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance.......Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance....

  17. Black phosphorus saturable absorber for ultrashort pulse generation

    Energy Technology Data Exchange (ETDEWEB)

    Sotor, J., E-mail: jaroslaw.sotor@pwr.edu.pl; Sobon, G.; Abramski, K. M. [Laser and Fiber Electronics Group, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, Wroclaw 50-370 (Poland); Macherzynski, W.; Paletko, P. [Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, Wroclaw 50-372 (Poland)

    2015-08-03

    Low-dimensional materials, due to their unique and versatile properties, are very interesting for numerous applications in electronics and optoelectronics. Recently rediscovered black phosphorus, with a graphite-like layered structure, can be effectively exfoliated up to the single atomic layer called phosphorene. Contrary to graphene, it possesses a direct band gap controllable by the number of stacked atomic layers. For those reasons, black phosphorus is now intensively investigated and can complement or replace graphene in various photonics and electronics applications. Here, we demonstrate that black phosphorus can serve as a broadband saturable absorber and can be used for ultrashort optical pulse generation. The mechanically exfoliated ∼300 nm thick layers of black phosphorus were transferred onto the fiber core, and under pulsed excitation at 1560 nm wavelength, its transmission increases by 4.6%. We have demonstrated that the saturable absorption of black phosphorus is polarization sensitive. The fabricated device was used to mode-lock an Er-doped fiber laser. The generated optical solitons with the 10.2 nm bandwidth and 272 fs duration were centered at 1550 nm. The obtained results unambiguously show that black phosphorus can be effectively used for ultrashort pulse generation with performances similar or even better than currently used graphene or carbon nanotubes. This application of black phosphorus proves its great potential to future practical use in photonics.

  18. Phosphorene quantum dot saturable absorbers for ultrafast fiber lasers

    Science.gov (United States)

    Du, J.; Zhang, M.; Guo, Z.; Chen, J.; Zhu, X.; Hu, G.; Peng, P.; Zheng, Z.; Zhang, H.

    2017-01-01

    We fabricate ultrasmall phosphorene quantum dots (PQDs) with an average size of 2.6 ± 0.9 nm using a liquid exfoliation method involving ultrasound probe sonication followed by bath sonication. By coupling the as-prepared PQDs with microfiber evanescent light field, the PQD-based saturable absorber (SA) device exhibits ultrafast nonlinear saturable absorption property, with an optical modulation depth of 8.1% at the telecommunication band. With the integration of the all-fiber PQD-based SA, a continuous-wave passively mode-locked erbium-doped (Er-doped) laser cavity delivers stable, self-starting pulses with a pulse duration of 0.88 ps and at the cavity repetition rate of 5.47 MHz. Our results contribute to the growing body of work studying the nonlinear optical properties of ultrasmall PQDs that present new opportunities of this two-dimensional (2D) nanomaterial for future ultrafast photonic technologies. PMID:28211471

  19. Quantum well saturable absorber mirror with electrical control of modulation depth

    DEFF Research Database (Denmark)

    Liu, Xiaomin; Rafailov, Edik U.; Livshits, Daniil

    2010-01-01

    in the range 2.5–0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6–26.7 J /cm2. This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect......We demonstrate a quantum well QW semiconductor saturable absorber mirror SESAM comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0–2 V to the p-i-n structure, we were able to change the SESAM modulation depth...

  20. Nanographene-Based Saturable Absorbers for Ultrafast Fiber Lasers

    Directory of Open Access Journals (Sweden)

    Hsin-Hui Kuo

    2014-01-01

    Full Text Available The generation of femtosecond pulse laser in the erbium-doped fiber laser system is presented by integrating of the nanographene-based saturable absorbers (SAs. A simplified method of dispersed nanographene-based SAs side-polished fiber device with controllable polished length and depth was also developed. The dependence of geometry of a graphene-deposited side-polished fiber device on optical nonlinear characteristics and on the performance of the MLFL was screened. We found that the 10 mm polished length with 1.68 dB insertion loss had the highest modulation depth (MD of 1.2%. A stable MLFL with graphene-based SAs employing the optimized side-polished fiber device showed a pulse width, a 3 dB bandwidth, a time-bandwidth product (TBP, a repetition rate, and pulse energy of 523 fs, 5.4 nm, 0.347, 16.7 MHz, and 0.18 nJ, respectively, at fundamental soliton-like operation. The femtosecond pulse laser is achieved by evanescent field coupling through graphene-deposited side-polished fiber devices in the laser cavity. This study demonstrates that the polished depth is the key fabrication geometric parameter affecting the overall optical performance and better results exist within the certain polished range.

  1. CsPbBr{sub 3} nanocrystal saturable absorber for mode-locking ytterbium fiber laser

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Yan; Li, Yue; Xu, Jianqiu; Tang, Yulong, E-mail: yulong@sjtu.edu.cn [Key Laboratory for Laser Plasmas (MOE), Department of Physics and Astronomy, Collaborative Innovation Center of IFSA, Shanghai Jiao Tong University, Shanghai 200240 (China); Hu, Zhiping; Tang, Xiaosheng [Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044 (China)

    2016-06-27

    Cesium lead halide perovskite nanocrystals (CsPbX{sub 3}, X = Cl, Br, I) have been reported as efficient light-harvesting and light-emitting semiconductor materials, but their nonlinear optical properties have been seldom touched upon. In this paper, we prepare layered CsPbBr{sub 3} nanocrystal films and characterize their physical properties. Broadband linear absorption from ∼0.8 to over 2.2 μm and nonlinear optical absorption at the 1-μm wavelength region are measured. The CsPbBr{sub 3} saturable absorber (SA), manufactured by drop-casting of colloidal CsPbBr{sub 3} liquid solution on a gold mirror, shows modulation depth and saturation intensity of 13.1% and 10.7 MW/cm{sup 2}, respectively. With this SA, mode-locking operation of a polarization-maintained ytterbium fiber laser produces single pulses with duration of ∼216 ps, maximum average output power of 10.5 mW, and the laser spectrum is centered at ∼1076 nm. This work shows that CsPbBr{sub 3} films can be efficient SA candidates for fiber lasers and also have great potential to become broadband linear and nonlinear optical materials for photonics and optoelectronics.

  2. CsPbBr3 nanocrystal saturable absorber for mode-locking ytterbium fiber laser

    Science.gov (United States)

    Zhou, Yan; Hu, Zhiping; Li, Yue; Xu, Jianqiu; Tang, Xiaosheng; Tang, Yulong

    2016-06-01

    Cesium lead halide perovskite nanocrystals (CsPbX3, X = Cl, Br, I) have been reported as efficient light-harvesting and light-emitting semiconductor materials, but their nonlinear optical properties have been seldom touched upon. In this paper, we prepare layered CsPbBr3 nanocrystal films and characterize their physical properties. Broadband linear absorption from ˜0.8 to over 2.2 μm and nonlinear optical absorption at the 1-μm wavelength region are measured. The CsPbBr3 saturable absorber (SA), manufactured by drop-casting of colloidal CsPbBr3 liquid solution on a gold mirror, shows modulation depth and saturation intensity of 13.1% and 10.7 MW/cm2, respectively. With this SA, mode-locking operation of a polarization-maintained ytterbium fiber laser produces single pulses with duration of ˜216 ps, maximum average output power of 10.5 mW, and the laser spectrum is centered at ˜1076 nm. This work shows that CsPbBr3 films can be efficient SA candidates for fiber lasers and also have great potential to become broadband linear and nonlinear optical materials for photonics and optoelectronics.

  3. The cascaded amplifier and saturable absorber (CASA) all-optical switch

    DEFF Research Database (Denmark)

    Hilliger, E.; Berger, J.; Weber, H. G.

    2001-01-01

    The cascaded amplifier and saturable absorber is presented as a new all-optical switching scheme for optical signal processing applications. First demultiplexing experiments demonstrate the principle of operation of this scheme....

  4. UV saturable absorber for short-pulse KrF laser systems.

    Science.gov (United States)

    Nishioka, H; Kuranishi, H; Ueda, K; Takuma, H

    1989-07-01

    A derivative of the linear tricyclic compound, acridine, is shown to be useful as a saturable absorber for short-pulse KrF lasers. The saturation characteristics and absorption recovery of a methanol solution of acridine for a 20-psec KrF laser pulse are reported. We obtain a saturation fluence of 1.2 mJ/cm(2) and a ratio of the primary to the excited absorption cross section of 6.25:1.

  5. Noise properties of semiconductor waveguides with alternating sections of saturable gain and absorption

    DEFF Research Database (Denmark)

    Öhman, Filip; Bischoff, Svend; Tromborg, Bjarne

    We investigate the dynamical noise properties of saturable semiconductor devices for optical signal processing. A trade-off between noise redistribution and extinction ratio improvement has to be made for all-optical regeneration.......We investigate the dynamical noise properties of saturable semiconductor devices for optical signal processing. A trade-off between noise redistribution and extinction ratio improvement has to be made for all-optical regeneration....

  6. UV saturable absorber for short-pulse KrF laser systems

    Energy Technology Data Exchange (ETDEWEB)

    Nishioka, H.; Kuranishi, H.; Ueda, K.; Takuma, H.

    1989-07-01

    A derivative of the linear tricyclic compound, acridine, is shown to beuseful as a saturable absorber for short-pulse KrF lasers. The saturationcharacteristics and absorption recovery of a methanol solution of acridine for a20-psec KrF laser pulse are reported. We obtain a saturation fluence of 1.2mJ/cm/sup 2/ and a ratio of the primary to the excited absorption cross sectionof 6.25:1.

  7. Tunable omnidirectional absorber and mode splitter based on semiconductor photonic crystal

    International Nuclear Information System (INIS)

    Ding, Guo-Wen; Liu, Shao-Bin; Zhang, Hai-Feng; Kong, Xiang-Kun; Li, Hai-Ming

    2015-01-01

    In this paper, the properties of one-dimensional (1D) photonic crystals (PCs) composed of the semiconductor (GaAs) and dielectric layers are theoretically investigated by the transfer matrix method (TMM). The absorption of semiconductor layers is investigated theoretically. Due to the magneto-optical Voigt effect, the dielectric constant of the semiconductor is modified differently in different modes and frequency ranges. If the frequency range of the incident wave is larger than the plasma frequency, TE and TM modes of the incident wave will be absorbed in a wide incident angle. TM wave will be absorbed but TE wave will be reflected while the frequency range is less than the plasma frequency. The absorption of semiconductor can also be tuned by varying the external magnetic field. The proposed PCs have a reconfigurable application to design a tunable omnidirectional absorber and mode splitter at same time

  8. Noise and saturation properties of semiconductor quantum dot optical amplifiers

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Mørk, Jesper

    2002-01-01

    We present a detailed theoretical analysis of quantum dot optical amplifiers. Due to the presence of a reservoir of wetting layer states, the saturation and noise properties differ markedly from bulk or QW amplifiers and may be significantly improved.......We present a detailed theoretical analysis of quantum dot optical amplifiers. Due to the presence of a reservoir of wetting layer states, the saturation and noise properties differ markedly from bulk or QW amplifiers and may be significantly improved....

  9. Temporal shaping of nanosecond CO2 laser pulses in multiphoton saturable absorbers

    International Nuclear Information System (INIS)

    Haglund, R.F. Jr.

    1981-01-01

    It was shown that substantial temporal distortion of nanosecond 10.6 μm laser pulses occurs in traversing multiphoton saturable absorbers. The risetime and pulse delay effects appear to depend both on fluence and wavelength, and to be qualitatively consistent with predictions of a simple two-level absorption model

  10. Short pulse absorption dynamics in a p-i-n InGaAsP MQW waveguide saturable absorber

    DEFF Research Database (Denmark)

    Romstad, Francis Pascal; Öhman, Filip; Mørk, Jesper

    2002-01-01

    The saturation properties and absorption dynamics of an InGaAsP MQW waveguide saturable absorber is measured using short 200-fs and 1-ps pulses. The dependence on the pulse energy and reverse bias is characterized.......The saturation properties and absorption dynamics of an InGaAsP MQW waveguide saturable absorber is measured using short 200-fs and 1-ps pulses. The dependence on the pulse energy and reverse bias is characterized....

  11. Q-Switched Operation with Carbon-Based Saturable Absorbers in a Nd:YLF Laser

    Directory of Open Access Journals (Sweden)

    Rosa Weigand

    2015-09-01

    Full Text Available We have numerically studied the influence of the absorption modulation depth of carbon-based saturable absorbers (graphene and carbon nanotubes (CNTs on the Q-switched regime of a diode-pumped Nd:YLF laser. A short-length cavity was used with an end mirror on which CNTs or mono- or bi-layer graphene were deposited, forming a saturable absorber mirror (SAM. Using a standard model, the generated energy per pulse was calculated, as well as the pulse duration and repetition rate. The results show that absorbers with higher modulation depths, i.e., graphene, deliver higher energy pulses at lower repetition rates. However, the pulse duration did not have a monotonic behavior and reaches a minimum for a given low value of the modulation depth typical of CNTs.

  12. A Q-Switched Erbium-Doped Fiber Laser with a Carbon Nanotube Based Saturable Absorber

    International Nuclear Information System (INIS)

    Harun, S. W.; Ismail, M. A.; Ahmad, F.; Ismail, M. F.; Nor, R. M.; Zulkepely, N. R.; Ahmad, H.

    2012-01-01

    We demonstrate a simple, compact and low cost Q-switched erbium-doped fiber laser (EDFL) using single-wall carbon nanotubes (CNTs) as a saturable absorber for possible applications in metrology, sensing, and medical diagnostics. The EDFL operates at around 1560 nm with repetition rates of 16.1 kHz and 6.4 kHz with saturable absorbers SA1 and SA2 at a pump power of 120 mW. The absorbers are constructed by optically driven deposition and normal deposition techniques. It is observed that the optical deposition method produces a Q-switched EDFL with a lower threshold of 70 mW and better Q-switching performance compared to that of the normal deposition method. The EDFL also has pulse energy of 90.3 nJ and pulse width of 11.6 μs at 120 mW pump power

  13. Ultrahigh precision nonlinear reflectivity measurement system for saturable absorber mirrors with self-referenced fluence characterization.

    Science.gov (United States)

    Orsila, Lasse; Härkönen, Antti; Hyyti, Janne; Guina, Mircea; Steinmeyer, Günter

    2014-08-01

    Measurement of nonlinear optical reflectivity of saturable absorber devices is discussed. A setup is described that enables absolute accuracy of reflectivity measurements better than 0.3%. A repeatability within 0.02% is shown for saturable absorbers with few-percent modulation depth. The setup incorporates an in situ knife-edge characterization of beam diameters, making absolute reflectivity estimations and determination of saturation fluences significantly more reliable. Additionally, several measures are discussed to substantially improve the reliability of the reflectivity measurements. At its core, the scheme exploits the limits of state-of-the-art digital lock-in technology but also greatly benefits from a fiber-based master-oscillator power-amplifier source, the use of an integrating sphere, and simultaneous comparison with a linear reflectivity standard.

  14. Low-loss saturable absorbers based on tapered fibers embedded in carbon nanotube/polymer composites

    Science.gov (United States)

    Martinez, Amos; Al Araimi, Mohammed; Dmitriev, Artemiy; Lutsyk, Petro; Li, Shen; Mou, Chengbo; Rozhin, Alexey; Sumetsky, Misha; Turitsyn, Sergei

    2017-12-01

    The emergence of low-dimensional materials has opened new opportunities in the fabrication of compact nonlinear photonic devices. Single-walled carbon nanotubes were among the first of those materials to attract the attention of the photonics community owing to their high third order susceptibility, broadband operation, and ultrafast response. Saturable absorption, in particular, has become a widespread application for nanotubes in the mode-locking of a fiber laser where they are used as nonlinear passive amplitude modulators to initiate pulsed operation. Numerous approaches have been proposed for the integration of nanotubes in fiber systems; these can be divided into those that rely on direct interaction (where the nanotubes are sandwiched between fiber connectors) and those that rely on lateral interaction with the evanescence field of the propagating wave. Tapered fibers, in particular, offer excellent flexibility to adjust the nonlinearity of nanotube-based devices but suffer from high losses (typically exceeding 50%) and poor saturable to non-saturable absorption ratios (typically above 1:5). In this paper, we propose a method to fabricate carbon nanotube saturable absorbers with controllable saturation power, low-losses (as low as 15%), and large saturable to non-saturable loss ratios approaching 1:1. This is achieved by optimizing the procedure of embedding tapered fibers in low-refractive index polymers. In addition, this study sheds light in the operation of these devices, highlighting a trade-off between losses and saturation power and providing guidelines for the design of saturable absorbers according to their application.

  15. Low-loss saturable absorbers based on tapered fibers embedded in carbon nanotube/polymer composites

    Directory of Open Access Journals (Sweden)

    Amos Martinez

    2017-12-01

    Full Text Available The emergence of low-dimensional materials has opened new opportunities in the fabrication of compact nonlinear photonic devices. Single-walled carbon nanotubes were among the first of those materials to attract the attention of the photonics community owing to their high third order susceptibility, broadband operation, and ultrafast response. Saturable absorption, in particular, has become a widespread application for nanotubes in the mode-locking of a fiber laser where they are used as nonlinear passive amplitude modulators to initiate pulsed operation. Numerous approaches have been proposed for the integration of nanotubes in fiber systems; these can be divided into those that rely on direct interaction (where the nanotubes are sandwiched between fiber connectors and those that rely on lateral interaction with the evanescence field of the propagating wave. Tapered fibers, in particular, offer excellent flexibility to adjust the nonlinearity of nanotube-based devices but suffer from high losses (typically exceeding 50% and poor saturable to non-saturable absorption ratios (typically above 1:5. In this paper, we propose a method to fabricate carbon nanotube saturable absorbers with controllable saturation power, low-losses (as low as 15%, and large saturable to non-saturable loss ratios approaching 1:1. This is achieved by optimizing the procedure of embedding tapered fibers in low-refractive index polymers. In addition, this study sheds light in the operation of these devices, highlighting a trade-off between losses and saturation power and providing guidelines for the design of saturable absorbers according to their application.

  16. Modeling of gain saturation effects in active semiconductor photonic crystal waveguides

    DEFF Research Database (Denmark)

    Chen, Yaohui; Mørk, Jesper

    2012-01-01

    In this paper, we present a theoretical analysis of slow-light enhanced light amplification in an active semiconductor photonic crystal line defect waveguide. The impact of enhanced light-matter interactions on carrier-depletion-induced modal gain saturation is investigated.......In this paper, we present a theoretical analysis of slow-light enhanced light amplification in an active semiconductor photonic crystal line defect waveguide. The impact of enhanced light-matter interactions on carrier-depletion-induced modal gain saturation is investigated....

  17. Fabrication of a saturable absorber WS2 and its mode locking in solid-state laser

    Science.gov (United States)

    Zhang, Chun-Yu; Zhang, Ling; Tang, Xiao-Ying; Yang, Ying-Ying

    2018-04-01

    We report on a passively mode-locked Nd : LuVO4 laser using a type saturable absorber of tungsten disulfide (WS2) fabricated by chemical vapor deposition method. At the pump power of 3.3 W, 1.18-W average output power of continuous-wave mode-locked laser with optical conversion efficiency of 36% was achieved. To the best of our knowledge, this is the highest output power of passively mode-locked solid-state laser based on WS2. The repetition rate of passively mode-locked pulse was 80 MHz with the pulse energy of 14.8 nJ. Our experimental results show that WS2 is an excellent type of saturable absorber.

  18. Graphene-gold supercapacitor as a voltage controlled saturable absorber for femtosecond pulse generation.

    Science.gov (United States)

    Baylam, Isinsu; Balci, Osman; Kakenov, Nurbek; Kocabas, Coskun; Sennaroglu, Alphan

    2016-03-01

    We report, for the first time to the best of our knowledge, use of a graphene-gold supercapacitor as a voltage controlled fast saturable absorber for femtosecond pulse generation. The unique design involving only one graphene electrode lowers the insertion loss of the device, in comparison with capacitor designs with two graphene electrodes. Furthermore, use of the high-dielectric electrolyte allows reversible, adjustable control of the absorption level up to the visible region with low bias voltages of only a few volts (0-2 V). The fast saturable absorber action of the graphene-gold supercapacitor was demonstrated inside a multipass-cavity Cr:forsterite laser to generate nearly transform-limited, sub-100 fs pulses at a pulse repetition rate of 4.51 MHz at 1.24 μm.

  19. Direct growth of graphene on quartz substrate as saturable absorber for femtosecond solid-state laser

    International Nuclear Information System (INIS)

    Xu, S C; Man, B Y; Jiang, S Z; Chen, C S; Liu, M; Yang, C; Gao, S B; Zhang, C; Feng, D J; Huang, Q J; Hu, G D; Chen, X F

    2014-01-01

    We present a novel method for the direct metal-free growth of graphene on quartz substrate. The direct-grown graphene yields excellent nonlinear saturable absorption properties and is demonstrated to be suitable as a saturable absorber (SA) for an ultrafast solid-state laser. Nearly Fourier-limited 367 fs was obtained at a central wavelength of 1048 nm with a repetition rate of 105.7 MHz. At a pump power of 7.95 W, the average output power was 1.93 W and the highest pulse energy reached 18.3 nJ, with a peak power of 49.8 kW. Our work opens an easy route for making a reliable graphene SA with a mode-locking technique and also displays an exciting prospect in making low-cost and ultrafast lasers. (letter)

  20. Black phosphorus saturable absorber for Q-switched Er:YAG laser at 1645 nm

    Science.gov (United States)

    Guo, Lei; Li, Tao; Zhang, Shuaiyi; Wang, Mingjian; Yang, Kejian; Fan, Mingqi; Zhao, Shengzhi; Li, Ming

    2018-03-01

    A Q-switched Er:YAG solid-state laser at 1645 nm based on black phosphorus (BP) saturable absorbers (SAs) was demonstrated firstly to our knowledge. The BP-SA was fabricated by drop-casting BP nanoplatelets dispersion on a YAG substrate and corresponding saturable absorption properties were characterized at 1.6 μm. By employing as-prepared BP-SAs, stable Q-switched laser operations were achieved with a pulse width of 2.8 μs and a repetition rate of 34 kHz, corresponding to the average output power of 0.33 W. The results verify that BP-SAs have great potential for pulsed 1.6 μm lasers.

  1. Moving localized structures and spatial patterns in quadratic media with a saturable absorber

    International Nuclear Information System (INIS)

    Tlidi, M; Taki, M; Berre, M Le; Reyssayre, E; Tallet, A; Di Menza, L

    2004-01-01

    For near the first lasing threshold, we give a detailed derivation of a real order parameter equation for the degenerate optical parametric oscillator with a saturable absorber. For this regime, we study analytically the role of the quasi-homogeneous neutral mode in the pattern formation process. We show that this effect stabilized the hexagonal patterns below the lasing threshold. More importantly, we find numerically that when Turing and Hopf bifurcations interact, a stable moving asymmetric localized structure with a constant transverse velocity is generated. The formation of the moving localized structures is analysed for both the propagation and the mean field models. A quantitative confrontation of the two models is discussed

  2. Stable optical soliton in the ring-cavity fiber system with carbon nanotube as saturable absorber

    Science.gov (United States)

    Li, Bang-Qing; Ma, Yu-Lan; Yang, Tie-Mei

    2018-01-01

    Main attention focuses on the theoretical study of the ring-cavity fiber laser system with carbon nanotubes (CNT) as saturable absorber (SA). The system is modelled as a non-standard Schrödinger equation with the coefficients blended real and imaginary numbers. New stable exact soliton solution is constructed by the bilinear transformation method for the system. The influences of the key parameters related to CNTs and SA on the optical pulse soliton are discussed in simulation. The soliton amplitude and phase can be tuned by choosing suitable parameters.

  3. Charge Saturation and Intrinsic Doping in Electrolyte-Gated Organic Semiconductors.

    Science.gov (United States)

    Atallah, Timothy L; Gustafsson, Martin V; Schmidt, Elliot; Frisbie, C Daniel; Zhu, X-Y

    2015-12-03

    Electrolyte gating enables low voltage operation of organic thin film transistors, but little is known about the nature of the electrolyte/organic interface. Here we apply charge-modulation Fourier transform infrared spectroscopy, in conjunction with electrical measurements, on a model electrolyte gated organic semiconductor interface: single crystal rubrene/ion-gel. We provide spectroscopic signature for free-hole like carriers in the organic semiconductor and unambiguously show the presence of a high density of intrinsic doping of the free holes upon formation of the rubrene/ion-gel interface, without gate bias (Vg = 0 V). We explain this intrinsic doping as resulting from a thermodynamic driving force for the stabilization of free holes in the organic semiconductor by anions in the ion-gel. Spectroscopy also reveals the saturation of free-hole like carrier density at the rubrene/ion-gel interface at Vg < -0.5 V, which is commensurate with the negative transconductance seen in transistor measurements.

  4. Passivation of black phosphorus saturable absorbers for reliable pulse formation of fiber lasers.

    Science.gov (United States)

    Na, Dongsoo; Park, Kichul; Park, Ki-Hwan; Song, Yong-Won

    2017-11-24

    Black phosphorus (BP) has attracted increasing attention due to its unique electrical properties. In addition, the outstanding optical nonlinearity of BP has been demonstrated in various ways. Its functionality as a saturable absorber, in particular, has been validated in demonstrations of passive mode-locked lasers. However, normally, the performance of BP is degraded eventually by both thermal and chemical damage in ambient conditions. The passivation of BP is the critical issue to guarantee a stable performance of the optical devices. We quantitatively characterized the mode-locked lasers operated by BP saturable absorbers with diversified passivation materials such as polydimethylsiloxane (PDMS) or Al 2 O 3 , considering the atomic structure of the materials, and therefore the hydro-permeability of the passivation layers. Unlike the BP layers without passivation, we demonstrated that the Al 2 O 3 -passivated BP layer was protected from the surface oxidation reaction in the long-term, and the PDMS-passivated one had a short-term blocking effect. The quantitative analysis showed that the time-dependent characteristics of the pulsed laser without passivation were changed with respect to the pulse duration, spectral width, and time-bandwidth product displaying 550 fs, 2.8 nm, and 0.406, respectively. With passivation, the changes were limited to <43 fs, <0.3 nm, and <0.012, respectively.

  5. Passivation of black phosphorus saturable absorbers for reliable pulse formation of fiber lasers

    Science.gov (United States)

    Na, Dongsoo; Park, Kichul; Park, Ki-Hwan; Song, Yong-Won

    2017-11-01

    Black phosphorus (BP) has attracted increasing attention due to its unique electrical properties. In addition, the outstanding optical nonlinearity of BP has been demonstrated in various ways. Its functionality as a saturable absorber, in particular, has been validated in demonstrations of passive mode-locked lasers. However, normally, the performance of BP is degraded eventually by both thermal and chemical damage in ambient conditions. The passivation of BP is the critical issue to guarantee a stable performance of the optical devices. We quantitatively characterized the mode-locked lasers operated by BP saturable absorbers with diversified passivation materials such as polydimethylsiloxane (PDMS) or Al2O3, considering the atomic structure of the materials, and therefore the hydro-permeability of the passivation layers. Unlike the BP layers without passivation, we demonstrated that the Al2O3-passivated BP layer was protected from the surface oxidation reaction in the long-term, and the PDMS-passivated one had a short-term blocking effect. The quantitative analysis showed that the time-dependent characteristics of the pulsed laser without passivation were changed with respect to the pulse duration, spectral width, and time-bandwidth product displaying 550 fs, 2.8 nm, and 0.406, respectively. With passivation, the changes were limited to <43 fs, <0.3 nm, and <0.012, respectively.

  6. Fiber-integrated tungsten disulfide saturable absorber (mirror) for pulsed fiber lasers

    Science.gov (United States)

    Chen, Hao; Li, Irene Ling; Ruan, Shuangchen; Guo, Tuan; Yan, Peiguang

    2016-08-01

    We propose two schemes for achieving tungsten disulfide (WS2)-based saturable absorber (SA) and saturable absorber mirror (SAM). By utilizing the pulsed laser deposition method, we grow the WS2 film on microfiber to form an evanescent field interaction SA device. Incorporating this SA device into a common ring-cavity erbium-doped fiber (EDF) laser, stably passive mode-locking can be achieved with pulse duration of 395 fs and signal-to-noise ratio of 64 dB. We also produce a fiber tip integrated WS2-SAM by utilizing the magnetron sputtering technique (MST). This new type of SAM combines the WS2 layer as SA and gold mirror as high reflective mirror. By employing the WS2-SAM, we construct the linear-cavity EDF lasers, and achieve passive mode-locking operation with pulse duration of ˜1 ns and SNR of ˜61 dB. We further achieve stably passive Q-switching operation with pulse duration of ˜160 ns and pulse energy of 54.4 nJ. These fiber-integrated SAs and SAMs have merits of compactness and reliability, paving the way for the development of new photonic devices such as SAs for pulsed laser technology.

  7. Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires

    Science.gov (United States)

    Luo, Jun-Wei; Li, Shu-Shen; Zunger, Alex

    2017-09-01

    The electric field manipulation of the Rashba spin-orbit coupling effects provides a route to electrically control spins, constituting the foundation of the field of semiconductor spintronics. In general, the strength of the Rashba effects depends linearly on the applied electric field and is significant only for heavy-atom materials with large intrinsic spin-orbit interaction under high electric fields. Here, we illustrate in 1D semiconductor nanowires an anomalous field dependence of the hole (but not electron) Rashba effect (HRE). (i) At low fields, the strength of the HRE exhibits a steep increase with the field so that even low fields can be used for device switching. (ii) At higher fields, the HRE undergoes a rapid transition to saturation with a giant strength even for light-atom materials such as Si (exceeding 100 meV Å). (iii) The nanowire-size dependence of the saturation HRE is rather weak for light-atom Si, so size fluctuations would have a limited effect; this is a key requirement for scalability of Rashba-field-based spintronic devices. These three features offer Si nanowires as a promising platform for the realization of scalable complementary metal-oxide-semiconductor compatible spintronic devices.

  8. Gold nanorod saturable absorber for passive mode-locking at 1 μm wavelength

    International Nuclear Information System (INIS)

    Kang, Z; Li, Q; Gao, X J; Jia, Z X; Qin, G S; Qin, W P; Zhang, L; Feng, Y

    2014-01-01

    Gold nanorods (GNRs) were used as a saturable absorber (SA) for passive mode-locking at 1 μm wavelength. The GNR-SA film was fabricated by mixing GNRs with sodium carboxymethylcellulose. The longitudinal surface plasmon resonance absorption of GNRs was used to induce mode-locking. By using the GNR-SA film, stable passive mode-locking at 1039 nm was experimentally demonstrated in an ytterbium-doped fiber laser cavity pumped by a 980 nm laser diode. The laser produced ∼440 ps pulses with a repetition rate of 36.6 MHz and an average output power of ∼1.25 mW for a pump power of ∼82 mW. (letter)

  9. L-band passively harmonic mode-locked fiber laser based on a graphene saturable absorber

    International Nuclear Information System (INIS)

    Du, J; Zhang, S M; Li, H F; Meng, Y C; Li, X L; Hao, Y P

    2012-01-01

    We have proposed and demonstrated an L-band passively harmonic mode-locked fiber laser based on a graphene saturable absorber (SA). By adjusting the pump power and the polarization controller, we have experimentally observed L-band fundamental and harmonic mode-locked optical pulses. The fundamental optical pulse has the duration of 1.3 ps, and the maximum average output power of 13.16 mW at the incident pump power of 98.8 mW. The order of the harmonic mode-locked optical pulses can be changed over the range from the second to the fourth. From the experimental results, we deduced that the likely origin of the harmonic mode-locked self-stabilization was the result of global and local soliton interactions induced by the unstability continuous wave (CW) components

  10. Distributed Intrusion Sensor Using DFB Laser with Optical Feedback and Saturable Absorber

    Directory of Open Access Journals (Sweden)

    Kyoo Nam Choi

    2018-01-01

    Full Text Available Characteristics of a distributed intrusion sensor using a coherent DFB laser diode with an external optical feedback and saturable absorber were experimentally investigated. The stimulus at a location of 2 km using a PZT transducer placed the location of a simulated intruder in Φ-OTDR trace after averaging 32 times. Field trials demonstrated the detection of a vehicle and a pedestrian crossing above the sensing line and a loop in a burial depth of 50 cm. This distributed intrusion sensor using a coherent DFB laser diode as the light source had the advantages of a simple structure and intruder detection capability at the underground burial location.

  11. Microfiber-based gold nanorods as saturable absorber for femtosecond pulse generation in a fiber laser

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xu-De [Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou, Guangdong 510006 (China); School of Physics and Electronic Information, Huaibei Normal University, Huaibei, Anhui 235000 (China); Luo, Zhi-Chao; Liu, Hao; Liu, Meng; Luo, Ai-Ping, E-mail: luoaiping@scnu.edu.cn; Xu, Wen-Cheng, E-mail: xuwch@scnu.edu.cn [Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou, Guangdong 510006 (China)

    2014-10-20

    We reported on the femtosecond pulse generation from an erbium-doped fiber (EDF) laser by using microfiber-based gold nanorods (GNRs) as saturable absorber (SA). By virtue of the geometric characteristic of microfiber-based GNRs, the optical damage threshold of GNRs-SA could be greatly enhanced. The microfiber-based GNRs-SA shows a modulation depth of 4.9% and a nonsaturable loss of 21.1%. With the proposed GNRs-SA, the fiber laser emitted a mode-locked pulse train with duration of ∼887 fs. The obtained results demonstrated that the GNRs deposited microfiber could indeed serve as a high-performance SA towards the practical applications in the field of ultrafast photonics.

  12. All-polarization maintaining erbium fiber laser based on carbon nanowalls saturable absorber

    Science.gov (United States)

    Kurata, Shintaro; Izawa, Jun; Kawaguchi, Norihito

    2018-02-01

    We report a soliton mode locked femtosecond oscillation with all-polarization maintaining erbuim doped fiber laser based on Carbon Nanowalls saturable absorber (CNWs SA). To improve the stability and the capability of the oscillator, the all-polarization maintaining(all-PM) fiber is generally used since PM fiber is tolerant of stretches and bends. The saturable absorber is an optical device that placed in a laser cavity to suppress continuous wave operation to promote cooperation between many modes to sustain ultrashort pulse operation. We apply CNWs for the material of SAs in our oscillator. CNWs are one of the nanocarbon materials, which are a high-aspect-ratio structure in the cross-section, where, although their width and height range in a few micrometers, the thickness is as small as ten nanometers or so. A sheet of CNWs is made up of nano-size graphite grain aggregates. Then CNWs structure is expected to have a high absorption to the incident light and large modulation depth due to a small number of carbon layers as well as CNT and Graphene. With this all-PM fiber laser oscillator based on CNWs SA, the soliton mode-locked laser oscillated with 66.3MHz repetition frequency and its spectrum width is 5.6nm in FWHM. Average output power is 8.1mW with 122.5mW laser diode pump power. In addition, the laser amplification system with erbium-doped fiber is constructed and amplifies the femtosecond pulse laser into 268.2mW and 3000mW pumping power.

  13. Slow and Fast Light in an Electro-Absorber

    DEFF Research Database (Denmark)

    Öhman, Filip; Bermejo Ramirez, Andres; Sales, Salvador

    2006-01-01

    We demonstrate controllable and large time delay in cascaded semiconductor saturable absorbers and amplifiers. The possibility of further increasing the tuneable phase shift by utilizing field screening effects in the quantum well absorber is demonstrated.......We demonstrate controllable and large time delay in cascaded semiconductor saturable absorbers and amplifiers. The possibility of further increasing the tuneable phase shift by utilizing field screening effects in the quantum well absorber is demonstrated....

  14. Dark solitons in erbium-doped fiber lasers based on indium tin oxide as saturable absorbers

    Science.gov (United States)

    Guo, Jia; Zhang, Huanian; Li, Zhen; Sheng, Yingqiang; Guo, Quanxin; Han, Xile; Liu, Yanjun; Man, Baoyuan; Ning, Tingyin; Jiang, Shouzhen

    2018-04-01

    Dark solitons, which have good stability, long transmission distance and strong anti-interference ability. By using a coprecipitation method, the high quality indium tin oxide (ITO) were prepared with an average diameter of 34.1 nm. We used a typical Z-scan scheme involving a balanced twin-detector measurement system to investigated nonlinear optical properties of the ITO nanoparticles. The saturation intensity and modulation depths are 13.21 MW/cm2 and 0.48%, respectively. In an erbium-doped fiber (EDF) lasers, we using the ITO nanoparticles as saturable absorber (SA), and the formation of dark soliton is experimentally demonstrated. The generated dark solitons are centered at the wavelength of 1561.1 nm with a repetition rate of 22.06 MHz. Besides, the pulse width and pulse-to-pulse interval of the dark solitons is ∼1.33ns and 45.11 ns, respectively. These results indicate that the ITO nanoparticles is a promising nanomaterial for ultrafast photonics.

  15. Space inhomogeneity and detuning effects in a laser with a saturable absorber: a first-order approximation

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Fernandez, P.; Velarde, M.G.

    1988-05-01

    To a first approximation the effects of detuning and/or space inhomogeneity on the stability domain of a model for a laser with a saturable absorber are presented. It appears that the space dependence increases the domain of the emissionless state, thus delaying the laser action.

  16. Experimental and Numerical Comparison Q-Switched Fiber Laser Generation using Graphene as Saturable Absorber

    Directory of Open Access Journals (Sweden)

    Awang Noor Azura

    2018-01-01

    Full Text Available We demonstrated the comparison experimentally and numerically a compact Q-switched erbium-doped fiber (EDF laser based on graphene as a saturable absorber (SA. By optically driven deposition of graphene on a fiber core, the SA is constructed and inserted into a diode-pumped EDF laser cavity. Lasing in CW region starts at 10 mW, whereas stable self-starting Q-switching with a central wavelength of 1530 nm begins at 18 mW. In this paper, at 35 mW, the maximum pulse energy reaches at 2 μJ with pulse repetition rate of 1 MHz and the narrowest pulse width is around 10 μs is obtained. The stability of the pulse is verified from the radio-frequency (RF spectrum with a measured signal-to-noise ratio (SNR of 48 dB. In this study, the design is compared with the simulation using the Optisystem software. The output power of the experimental study is also compared with the simulation to examine the performance.

  17. High-damage-resistant tungsten disulfide saturable absorber mirror for passively Q-switched fiber laser.

    Science.gov (United States)

    Chen, Hao; Chen, YuShan; Yin, Jinde; Zhang, Xuejun; Guo, Tuan; Yan, Peiguang

    2016-07-25

    In this paper, we demonstrate a high-damage-resistant tungsten disulfide saturable absorber mirror (WS2-SAM) fabricated by magnetron sputtering technique. The WS2-SAM has an all-fiber-integrated configuration and high-damage-resistant merit because the WS2 layer is protected by gold film so as to avoid being oxidized and destroyed at high pump power. Employing the WS2-SAM in an Erbium-doped fiber laser (EDFL) with linear cavity, the stable Q-switching operation is achieved at central wavelength of 1560 nm, with the repetition rates ranging from 29.5 kHz to 367.8 kHz and the pulse duration ranging from 1.269 μs to 154.9 ns. For the condition of the maximum pump power of 600 mW, the WS2-SAM still works stably with an output power of 25.2 mW, pulse energy of 68.5 nJ, and signal-noise-ratio of 42 dB. The proposed WS2-SAM configuration provides a promising solution for advanced pulsed fiber lasers with the characteristics of high damage resistance, high output energy, and wide tunable frequency.

  18. All-fibre Q-switching YDFL operation with bismuth-doped fibre as saturable absorber

    Science.gov (United States)

    Muhammad, A. R.; Haris, H.; Arof, H.; Tan, S. J.; Ahmad, M. T.; Harun, S. W.

    2018-05-01

    We demonstrate the generation of a passively Q-switched ytterbium-doped fibre laser (YDFL) using a bismuth-doped fibre (BDF) as a solid-state fibre saturable absorber (FSA) in a ring cavity. The BDF used has a wide and low absorption band of 5 dB/m at the 1.0 μm region due to the ion transition of ? that occurs around the region. When introduced into a YDFL laser cavity, a stable Q-switched pulse operation was observed and the pulse repetition rate was proportional to the input pump power. It was limited to 72.99 kHz by the maximum power that the laser diode could supply. Meanwhile, the pulse width decreased from 12.22 to 4.85 μs as the pump power was increased from 215.6 to 475.6 mW. The finding suggests that BDF could be used as a potential SA for the development of robust, compact, efficient and low cost Q-switched fibre lasers operating at 1 micron region.

  19. Output power PDF of a saturated semiconductor optical amplifier: Second-order noise contributions by path integral method

    DEFF Research Database (Denmark)

    Öhman, Filip; Mørk, Jesper; Tromborg, Bjarne

    2007-01-01

    We have developed a second-order small-signal model for describing the nonlinear redistribution of noise in a saturated semiconductor optical amplifier. In this paper, the details of the model are presented. A numerical example is used to compare the model to statistical simulations. We show that...

  20. Q-switched Yb3+:YAG laser using plasmonic Cu2-xSe quantum dots as saturable absorbers

    Science.gov (United States)

    Wang, Yimeng; Zhan, Yi; Lee, Sooho; Wang, Li; Zhang, Xinping

    2018-04-01

    Cu2-xSe quantum dots (QDs) were synthesized by organometallic synthesis methods. Due to heavy self-doping, the Cu2-xSe QDs exhibit particle plasmon resonance in the near-infrared. Transient absorption spectroscopic investigation revealed strong nonlinear optical absorption and bleaching performance of the QDs under femtosecond pulse excitation, which enabled the Cu2-xSe QDs to be excellent saturable absorbers and applied in Q-switched or mode-locked lasers. A passively Q-switched Yb3+:YAG solid-state laser at 1.03 μm was achieved by coating Cu2-xSe QDs as saturable absorbers onto one of the output coupler of the V-shaped linear cavity.

  1. Nanosecond-pulsed Q-switched Nd:YAG laser at 1064 nm with a gold nanotriangle saturable absorber

    Science.gov (United States)

    Chen, Xiaohan; Li, Ping; Dun, Yangyang; Song, Teng; Ma, Baomin

    2018-06-01

    Gold nanotriangles (GNTs) were successfully employed as a saturable absorber (SA) to achieve passively Q-switched lasers for the first time. The performance of the Q-switched Nd:YAG laser at 1064 nm has been systematically investigated. The corresponding shortest pulsewidth, the threshold pump power and the maximum Q-switched average output power were 275.5 ns, 1.37 W, and 171 mW, respectively. To our knowledge, this is the shortest pulsewidth and the lowest threshold in a passively Q-switched laser at approximately 1.1 µm based on a gold nanoparticle SA (GNPs-SA). Our experimental results proved that the GNTs-SA can be used as a promising saturable absorber for nanosecond-pulsed lasers.

  2. Semiconductor-based Multilayer Selective Solar Absorber for Unconcentrated Solar Thermal Energy Conversion.

    Science.gov (United States)

    Thomas, Nathan H; Chen, Zhen; Fan, Shanhui; Minnich, Austin J

    2017-07-13

    Solar thermal energy conversion has attracted substantial renewed interest due to its applications in industrial heating, air conditioning, and electricity generation. Achieving stagnation temperatures exceeding 200 °C, pertinent to these technologies, with unconcentrated sunlight requires spectrally selective absorbers with exceptionally low emissivity in the thermal wavelength range and high visible absorptivity for the solar spectrum. In this Communication, we report a semiconductor-based multilayer selective absorber that exploits the sharp drop in optical absorption at the bandgap energy to achieve a measured absorptance of 76% at solar wavelengths and a low emittance of approximately 5% at thermal wavelengths. In field tests, we obtain a peak temperature of 225 °C, comparable to that achieved with state-of-the-art selective surfaces. With straightforward optimization to improve solar absorption, our work shows the potential for unconcentrated solar thermal systems to reach stagnation temperatures exceeding 300 °C, thereby eliminating the need for solar concentrators for mid-temperature solar applications such as supplying process heat.

  3. Watt-level passively Q-switched double-cladding fiber laser based on graphene oxide saturable absorber.

    Science.gov (United States)

    Yu, Zhenhua; Song, Yanrong; Dong, Xinzheng; Li, Yanlin; Tian, Jinrong; Wang, Yonggang

    2013-10-10

    A watt-level passively Q-switched ytterbium-doped double-cladding fiber laser with a graphene oxide (GO) absorber was demonstrated. The structure of the GO saturable absorber mirror (GO-SAM) was of the sandwich type. A maximum output power of 1.8 W was obtained around a wavelength of 1044 nm. To the best of our knowledge, this is the highest output power in Q-switched fiber lasers based on a GO saturable absorber. The pure GO was protected from the oxygen in the air so that the damage threshold of the GO-SAM was effectively raised. The gain fiber was a D-shaped ytterbium-doped double-cladding fiber. The pulse repetition rates were tuned from 120 to 215 kHz with pump powers from 3.89 to 7.8 W. The maximum pulse energy was 8.37 μJ at a pulse width of 1.7 μs.

  4. Free-standing nano-scale graphite saturable absorber for passively mode-locked erbium doped fiber ring laser

    International Nuclear Information System (INIS)

    Lin, Y-H; Lin, G-R

    2012-01-01

    The free-standing graphite nano-particle located between two FC/APC fiber connectors is employed as the saturable absorber to passively mode-lock the ring-type Erbium-doped fiber laser (EDFL). The host-solvent-free graphite nano-particles with sizes of 300 – 500 nm induce a comparable modulation depth of 54%. The interlayer-spacing and lattice fluctuations of polished graphite nano-particles are observed from the weak 2D band of Raman spectrum and the azimuth angle shift of –0.32 ° of {002}-orientation dependent X-ray diffraction peak. The graphite nano-particles mode-locked EDFL generates a 1.67-ps pulsewidth at linearly dispersion-compensated regime with a repetition rate of 9.1 MHz. The time-bandwidth product of 0.325 obtained under a total intra-cavity group-delay-dispersion of –0.017 ps 2 is nearly transform-limited. The extremely high stability of the nano-scale graphite saturable absorber during mode-locking is observed at an intra-cavity optical energy density of 7.54 mJ/cm 2 . This can be attributed to its relatively high damage threshold (one order of magnitude higher than the graphene) on handling the optical energy density inside the EDFL cavity. The graphite nano-particle with reduced size and sufficient coverage ratio can compete with other fast saturable absorbers such as carbon nanotube or graphene to passively mode-lock fiber lasers with decreased insertion loss and lasing threshold

  5. Saturable absorber Q- and gain-switched all-Yb3+ all-fiber laser at 976 and 1064 nm.

    Science.gov (United States)

    Tsai, Tzong-Yow; Fang, Yen-Cheng; Huang, Huai-Min; Tsao, Hong-Xi; Lin, Shih-Ting

    2010-11-08

    We demonstrate a novel passively pulsed all-Yb3+ all-fiber laser pumped by a continuous-wave 915-nm pump laser diode. The laser was saturable absorber Q-switched at 976 nm and gain-switched at 1064 nm, using the method of mode-field-area mismatch. With a pump power of 
105 mW, the laser iteratively produced a 976-nm pulse with an energy of 2.8 μJ and a duration of 280 ns, followed by a 1064-nm pulse with 1.1 μJ and a 430-ns duration at a repetition rate of 9 kHz. A set of rate equations was established to simulate the self-balancing mechanism and the correlation between the Q- and gain-switched photon numbers and the populations of the gain and absorber fibers.

  6. Stable Single Polarization, Single Frequency, and Linear Cavity Er-Doped Fiber Laser Using a Saturable Absorber

    International Nuclear Information System (INIS)

    Li Qi; Yan Feng-Ping; Peng Wan-Jing; Feng Su-Chun; Feng Ting; Tan Si-Yu; Liu Peng

    2013-01-01

    A simple approach for stable single polarization, single frequency, and linear cavity erbium doped fiber laser is proposed and demonstrated. A Fabry—Pérot filter, polarizer and saturable absorber are used together to ensure stable single frequency, single polarization operation. The optical signal-to-noise ratio of the laser is approximately 57 dB, and the Lorentz linewidth is 13.9 kHz. The polarization state of the laser with good stability is confirmed and the degree of polarization is >99%

  7. All-fiber Yb-doped fiber laser passively mode-locking by monolayer MoS2 saturable absorber

    Science.gov (United States)

    Zhang, Yue; Zhu, Jianqi; Li, Pingxue; Wang, Xiaoxiao; Yu, Hua; Xiao, Kun; Li, Chunyong; Zhang, Guangyu

    2018-04-01

    We report on an all-fiber passively mode-locked ytterbium-doped (Yb-doped) fiber laser with monolayer molybdenum disulfide (ML-MoS2) saturable absorber (SA) by three-temperature zone chemical vapor deposition (CVD) method. The modulation depth, saturation fluence, and non-saturable loss of this ML-MoS2 are measured to be 3.6%, 204.8 μJ/cm2 and 6.3%, respectively. Based on this ML-MoS2SA, a passively mode-locked Yb-doped fiber laser has been achieved at 979 nm with pulse duration of 13 ps and repetition rate of 16.51 MHz. A mode-locked fiber laser at 1037 nm is also realized with a pulse duration of 475 ps and repetition rate of 26.5 MHz. To the best of our knowledge, this is the first report that the ML-MoS2 SA is used in an all-fiber Yb-doped mode-locked fiber laser at 980 nm. Our work further points the excellent saturable absorption ability of ML-MoS2 in ultrafast photonic applications.

  8. Bismuth telluride topological insulator nanosheet saturable absorbers for q-switched mode-locked Tm:ZBLAN waveguide lasers

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xiantao; Gross, Simon; Withford, Michael J.; Fuerbach, Alexander [Centre for Ultrahigh bandwidth Devices for Optical Systems (CUDOS) and MQ Photonics Research Centre, Dept. of Physics and Astronomy, Macquarie Univ., NSW (Australia); Zhang, Han; Guo, Zhinan [SZU-NUS Collaborative Innovation Centre for Optoelectronic Science and Technology, Key Lab. of Optoelectronic Devices and Systems of Ministry of Education, College of Optoelectronic Engineering, Shenzhen Univ. (China)

    2016-08-15

    Nanosheets of bismuth telluride (Bi{sub 2}Te{sub 3}), a topological insulator material that exhibits broadband saturable absorption due to its non-trivial Dirac-cone like energy structure, are utilized to generate short pulses from Tm:ZBLAN waveguide lasers. By depositing multiple layers of a carefully prepared Bi{sub 2}Te{sub 3} solution onto a glass substrate, the modulation depth and the saturation intensity of the fabricated devices can be controlled and optimized. This approach enables the realization of saturable absorbers that feature a modulation depth of 13% and a saturation intensity of 997 kW/cm{sup 2}. For the first time to our knowledge, Q-switched mode-locked operation of a linearly polarized mid-IR ZBLAN waveguide chip laser was realized in an extended cavity configuration using the topological insulator Bi{sub 2}Te{sub 3}. The maximum average output power of the laser is 16.3 mW and the Q-switched and mode-locked repetition rates are 44 kHz and 436 MHz, respectively. (copyright 2016 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Photocatalytic oxidation of organic compounds in a hybrid system composed of a molecular catalyst and visible light-absorbing semiconductor.

    Science.gov (United States)

    Zhou, Xu; Li, Fei; Li, Xiaona; Li, Hua; Wang, Yong; Sun, Licheng

    2015-01-14

    Photocatalytic oxidation of organic compounds proceeded efficiently in a hybrid system with ruthenium aqua complexes as catalysts, BiVO4 as a light absorber, [Co(NH3)5Cl](2+) as a sacrificial electron acceptor and water as an oxygen source. The photogenerated holes in the semiconductor are used to oxidize molecular catalysts into the high-valent Ru(IV)=O intermediates for 2e(-) oxidation.

  10. Spectrally selective solar absorber with sharp and temperature dependent cut-off based on semiconductor nanowire arrays

    Science.gov (United States)

    Wang, Yang; Zhou, Lin; Zheng, Qinghui; Lu, Hong; Gan, Qiaoqiang; Yu, Zongfu; Zhu, Jia

    2017-05-01

    Spectrally selective absorbers (SSA) with high selectivity of absorption and sharp cut-off between high absorptivity and low emissivity are critical for efficient solar energy conversion. Here, we report the semiconductor nanowire enabled SSA with not only high absorption selectivity but also temperature dependent sharp absorption cut-off. By taking advantage of the temperature dependent bandgap of semiconductors, we systematically demonstrate that the absorption cut-off profile of the semiconductor-nanowire-based SSA can be flexibly tuned, which is quite different from most of the other SSA reported so far. As an example, silicon nanowire based selective absorbers are fabricated, with the measured absorption efficiency above (below) bandgap ˜97% (15%) combined with an extremely sharp absorption cut-off (transition region ˜200 nm), the sharpest SSA demonstrated so far. The demonstrated semiconductor-nanowire-based SSA can enable a high solar thermal efficiency of ≳86% under a wide range of operating conditions, which would be competitive candidates for the concentrated solar energy utilizations.

  11. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  12. An Nd:YLF laser Q-switched by a monolayer-graphene saturable-absorber mirror

    International Nuclear Information System (INIS)

    Matía-Hernando, Paloma; Guerra, José Manuel; Weigand, Rosa

    2013-01-01

    We demonstrate Q-switched operation of a transversely diode-pumped Nd:YLF (yttrium lithium fluoride) laser using chemical vapour deposition-grown large-area monolayer graphene transferred to a dielectric saturable-absorber mirror (G-SAM). The resulting compact design operates at 1047 nm with 2.5 μs pulses in a 100% modulation Q-switch regime with an average and very stable output power of 0.5 W. Different cavity lengths have been employed and the results are compared against a theoretical model based on rate equations, evidencing the role of transverse pumping in the system. The model also reveals that monolayer graphene effectively leads to shorter and more powerful pulses compared to those with multilayer graphene. These results establish the potential of single-layer graphene for providing a reliable and efficient Q-switch mechanism in solid-state lasers. (paper)

  13. Performance Comparison of Mode-Locked Erbium-Doped Fiber Laser with Nonlinear Polarization Rotation and Saturable Absorber Approaches

    International Nuclear Information System (INIS)

    Ismail, M. A.; Tan, S. J.; Shahabuddin, N. S.; Harun, S. W.; Arof, H.; Ahmad, H.

    2012-01-01

    A mode-locked erbium-doped fiber laser (EDFL) is demonstrated using a highly concentrated erbium-doped fiber (EDF) as the gain medium in a ring configuration with and without a saturable absorber (SA). Without the SA, the proposed laser generates soliton pulses with a repetition rate of 12 MHz, pulse width of 1.11 ps and energy pulse of 1.6 pJ. By incorporating SA in the ring cavity, the optical output of the laser changes from soliton to stretched pulses due to the slight change in the group velocity dispersion. With the SA, a cleaner pulse is obtained with a repetition rate of 11.3 MHz, a pulse width of 0.58 ps and a pulse energy of 2.3 pJ. (fundamental areas of phenomenology(including applications))

  14. Black phosphorus saturable absorber for ultrafast mode-locked pulse laser via evanescent field interaction

    Energy Technology Data Exchange (ETDEWEB)

    Park, Kichul; Lee, Young Tack; Choi, Won-Kook; Song, Yong-Won [Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Lee, Junsu; Lee, Ju Han [School of Electrical and Computer Engineering, University of Seoul (Korea, Republic of)

    2015-12-15

    Black phosphorus, or BP, has found a lot of applications in recent years including photonics. The most recent studies have shown that the material has an excellent optical nonlinearity useful in many areas, one of which is in saturable absorption for passive mode-locking. A direct interaction scheme for mode-locking, however, has a potential to optically cause permanent damage to the already delicate material. Evanescent field interaction scheme has already been proven to be a useful method to prevent such danger for other 2-dimensional nanomaterials. In this report, we have utilized the evanescent field interaction to demonstrate that the optical nonlinear characteristics of BP is sufficiently strong to use in such an indirect interaction method. The successful demonstration of the passive mode-locking operation has generated pulses with the pulse duration, repetition rate, and time bandwidth product of 2.18 ps, 15.59 MHz, and 0.336, respectively. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Tm-doped fiber laser mode-locking with MoS2-polyvinyl alcohol saturable absorber

    Science.gov (United States)

    Cao, Liming; Li, Xing; Zhang, Rui; Wu, Duanduan; Dai, Shixun; Peng, Jian; Weng, Jian; Nie, Qiuhua

    2018-03-01

    We have designed an all-fiber passive mode-locking thulium-doped fiber laser that uses molybdenum disulfide (MoS2) as a saturable absorber (SA) material. A free-standing few-layer MoS2-polyvinyl alcohol (PVA) film is fabricated by liquid phase exfoliation (LPE) and is then transferred onto the end face of a fiber connector. The excellent saturable absorption of the fabricated MoS2-based SA allows the laser to output soliton pulses at a pump power of 500 mW. Fundamental frequency mode-locking is realized at a repetition frequency of 13.9 MHz. The central wavelength is 1926 nm, the 3 dB spectral bandwidth is 2.86 nm and the pulse duration is 1.51 ps. Additionally, third-order harmonic mode-locking of the laser is also achieved. The pulse duration is 1.33 ps, which is slightly narrower than the fundamental frequency mode-locking bandwidth. The experimental results demonstrate that the few-layer MoS2-PVA SA is promising for use in 2 μm laser systems.

  16. Black phosphorus saturable absorber for a diode-pumped passively Q-switched Er:CaF2 mid-infrared laser

    Science.gov (United States)

    Li, Chun; Liu, Jie; Guo, Zhinan; Zhang, Han; Ma, Weiwei; Wang, Jingya; Xu, Xiaodong; Su, Liangbi

    2018-01-01

    A multilayer black phosphorus, as a novel two dimensional saturable absorber, has superb saturable absorption properties for a Er:CaF2 solid-state pulse laser. The pulse laser is realized at mid-infrared region with the passively Q-switched technology by a diode-pumping. The high-quality black phosphorus saturable absorber is fabricated by liquid phase exfoliation method. The pulse laser generates the pulses operation with the pulse duration of 954.8 ns, the repetition rate of 41.93 kHz, the pulse energy of 4.25 μJ and the peak power of 4.45 W. Our work demonstrates that black phosphorus could be used as a kind of efficient mid-infrared region optical absorber for ultrafast photonics.

  17. Quantum-dot saturable absorber and Kerr-lens mode-locked Yb:KGW laser with >450  kW of peak power.

    Science.gov (United States)

    Akbari, R; Zhao, H; Fedorova, K A; Rafailov, E U; Major, A

    2016-08-15

    The hybrid action of quantum-dot saturable absorber and Kerr-lens mode locking in a diode-pumped Yb:KGW laser was demonstrated. Using a quantum-dot saturable absorber with a 0.7% (0.5%) modulation depth, the mode-locked laser delivered 90 fs (93 fs) pulses with 3.2 W (2.9 W) of average power at the repetition rate of 77 MHz, corresponding to 462 kW (406 kW) of peak power and 41 nJ (38 nJ) of pulse energy. To the best of our knowledge, this represents the highest average and peak powers generated to date from quantum-dot saturable absorber-based mode-locked lasers.

  18. Diode-pumped passively Q-switched Nd:GdTaO4 laser based on tungsten disulfide nanosheets saturable absorber at 1066 nm

    Science.gov (United States)

    Li, M. X.; Jin, G. Y.; Li, Y.

    2018-05-01

    In this paper, we investigated the passively Q-switched Nd:GdTaO4 laser based on tungsten disulfide (WS2) saturable absorber (SA). The preparation method of WS2 SA was to attach the WS2-alcohol dispersion onto the quartz substrates. The diode-pumped passively Q-switched Nd:GdTaO4 laser operated at a central wavelength of 1066 nm. The stable pulse output could be obtained at the single pulse width of 560 ns. In a word, WS2 seems to be a suitable saturable absorber for solid state lasers.

  19. Characterization of highly stacked InAs quantum dot layers on InP substrate for a planar saturable absorber at 1.5 μm band

    International Nuclear Information System (INIS)

    Inoue, Jun; Akahane, Kouichi; Yamamoto, Naokatsu; Isu, Toshiro; Tsuchiya, Masahiro

    2006-01-01

    We examined the absorption saturation properties in the 1.5 μm band of novel highly stacked InAs quantum dot layers. The transmission change at vertical incidence based on the saturable absorption of the quantum dots was more than 1%. This value is as large as the reflection changes of previously reported 1-μm-band quantum dot saturable absorber with interference enhancement. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Reduction of interferometric crosstalk induced penalty using a saturated semiconductor optical amplifier

    DEFF Research Database (Denmark)

    Liu, Fenghai; Zheng, Xueyan; Poulsen, Henrik Nørskov

    2000-01-01

    We successfully demonstrated that a simple saturated SOA could be used to reduce the impact from the interferometric crosstalk at 2.5 and 10 Gb/s. It is shown that 4 dB more crosstalk power can be tolerated at 1 dB penalty by using the SOA. This will greatly reduce the crosstalk requirement...

  1. Q-switching and mode-locking pulse generation with graphene oxide paper-based saturable absorber

    Directory of Open Access Journals (Sweden)

    Sulaiman Wadi Harun

    2015-06-01

    Full Text Available Q-switched and mode-locked erbium-doped fibre lasers (EDFLs are demonstrated by using non-conductive graphene oxide (GO paper as a saturable absorber (SA. A stable and self-starting Q-switched operation was achieved at 1534.4 nm by using a 0.8 m long erbium-doped fibre (EDF as a gain medium. The pulse repetition rate changed from 14.3 to 31.5 kHz, whereas the corresponding pulse width decreased from 32.8 to 13.8 µs as the pump power increased from 22 to 50.5 mW. A narrow spacing dual-wavelength Q-switched EDFL could also be realised by including a photonics crystal fibre and a tunable Bragg filter in the setup. It can operate at a maximum repetition rate of 31 kHz, with a pulse duration of 7.04 µs and pulse energy of 2.8 nJ. Another GOSA was used to realise mode-locked EDFL in a different cavity consisting of a 1.6 m long EDF in conjunction with 1480 nm pumping. The laser generated a soliton pulse train with a repetition rate of 15.62 MHz and pulse width of 870 fs. It is observed that the proposed fibre lasers have a low pulsing threshold pump power as well as a low damage threshold.

  2. Conductive graphene as passive saturable absorber with high instantaneous peak power and pulse energy in Q-switched regime

    Science.gov (United States)

    Zuikafly, Siti Nur Fatin; Khalifa, Ali; Ahmad, Fauzan; Shafie, Suhaidi; Harun, SulaimanWadi

    2018-06-01

    The Q-switched pulse regime is demonstrated by integrating conductive graphene as passive saturable absorber producing relatively high instantaneous peak power and pulse energy. The fabricated conductive graphene is investigated using Raman spectroscopy. The single wavelength Q-switching operates at 1558.28 nm at maximum input pump power of 151.47 mW. As the pump power is increased from threshold power of 51.6 mW to 151.47 mW, the pulse train repetition rate increases proportionally from 47.94 kHz to 67.8 kHz while the pulse width is reduced from 9.58 μs to 6.02 μs. The generated stable pulse produced maximum peak power and pulse energy of 32 mW and 206 nJ, respectively. The first beat node of the measured signal-to-noise ratio is about 62 dB indicating high pulse stability.

  3. A Filmy Black-Phosphorus Polyimide Saturable Absorber for Q-Switched Operation in an Erbium-Doped Fiber Laser

    Directory of Open Access Journals (Sweden)

    Tianxian Feng

    2016-11-01

    Full Text Available We demonstrate an erbium-doped fiber laser passively Q-switched by a black-phosphorus polyimide film. The multi-layer black-phosphorus (BP nanosheets were prepared via a liquid exfoliation approach exploiting N-methylpyrrolidone as the dispersion liquid. By mixing the BP nanosheets with polyimide (PI, a piece of BP–PI film was obtained after evaporating the mixture in a petri dish. The BP–PI saturable absorber had a modulation depth of 0.47% and was inserted into an erbium-doped fiber laser to realize passive Q-switched operations. The repetition rate of the Q-switched laser increased from 5.73 kHz to 31.07 kHz when the laser pump was enhanced from 31.78 mW to 231.46 mW. Our results show that PI is an excellent host material to protect BP from oxidation, and the BP–PI film can act as a promising nonlinear optical device for laser applications.

  4. Passive Q-switching in CW-CO2 laser with SF6 as an intracavity saturable absorber

    International Nuclear Information System (INIS)

    Al-Hawat, Sh.

    2007-10-01

    A passive Q-switching was applied to a tunable CW CO 2 laser with output power about 3.5 W using SF 6 as a saturable absorber inside the cavity. The Q-Switching phenomenon was studied ( pulse shape, pulse duration, repetition rate and conditions of its generation ) at the spectral lines of 10P(10), 10P(26), 10P(28) and 10P(30) from the branch of 10P of CO 2 laser. These lines had a weak absorption in relation to other lines of this branch, under SF 6 pressure till 0.5 mbar. To control the behaviour of such phenomenon, the gases He and Xe were added separately to SF 6 . It was observed that the Q-switching phenomenon was depended on the added gas pressure of Xe and He, through the repetitive rate of pulses , duration and energy of generated laser pulse. A computational program was written to calculate the Q-switching pulses parameters under similar conditions as those applied in the case of SF 6 +He mixture. A comparison was made with the experimental data , not so big discrepancies were observed between them. In addition to that, absorption coefficients of SF 6 were determined in two cases: the first one when the absorption cell was located outside the laser cavity, and the second one when the cell was located inside the cavity. On the basis of obtained coefficients the absorption cross sections of SF 6 were found and compared with NIST database.(author)

  5. Mode-locked ytterbium fiber lasers using a large modulation depth carbon nanotube saturable absorber without an additional spectral filter

    International Nuclear Information System (INIS)

    Pan, Y Z; Miao, J G; Liu, W J; Huang, X J; Wang, Y B

    2014-01-01

    We demonstrate an all-normal-dispersion ytterbium (Yb)-doped fiber laser mode-locked by a higher modulation depth carbon nanotube saturable absorber (CNT-SA) based on an evanescent field interaction scheme. The laser cavity consists of pure normal dispersion fibers without dispersion compensation and an additional spectral filter. It is exhibited that the higher modulation depth CNT-SA could contribute to stabilize the mode-locking operation within a limited range of pump power and generate the highly chirped pulses with a high-energy level in the cavity with large normal dispersion and strong nonlinearity. Stable mode-locked pulses with a maximal energy of 29 nJ with a 5.59 MHz repetition rate at the operating wavelength around 1085 nm have been obtained. The maximal time-bandwidth product is 262.4. The temporal and spectral characteristics of pulses versus pump power are demonstrated. The experimental results suggest that the CNT-SA provides a sufficient nonlinear loss to compensate high nonlinearity and catch up the gain at a different pump power and thus leads to the stable mode locking. (letter)

  6. A transfer function approach to the small-signal response of saturated semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Nielsen, Mads Lønstrup; Blumenthal, D. J.; Mørk, Jesper

    2000-01-01

    A theoretical analysis of the small-signal frequency response (SSFR) of a wavelength converter based on cross-gain modulation in a semiconductor optical amplifier with a finite waveguide loss is presented. We use a transfer function formalism to explain the resonant behavior of the frequency...... response. The limitations to the magnitude of the spectral overshoot are also accounted for. Operating with the data and CW signals in a co-propagating configuration, we End that the resonance only exists for a finite waveguide loss. In a counter-propagating scheme, a resonance can exist regardless...

  7. Saturation and oscillation of current in semiconductors subjected to uniaxial deformation

    International Nuclear Information System (INIS)

    Zdebskii, A.P.; Olikh, Yu.A.; Savchuk, A.U.

    1985-01-01

    The influence of an external uniaxial deformation on the saturation and oscillations of current in photosensitive CdS monocrystals is investigated. The specimens were subjected to uniaxial pressure up to 6 x 10 7 N/m 2 , the pressure being either parallel or perpendicular to the c axis in CdS. With application of external pressure, the shape of current oscillations and their amplitude changed. In the case where the pressure was perpendicular to the direction of current I, the amplitude of oscillations and the saturation depth of the volt-ampere characteristic, VAC, were increased. With pressure being parallel to the current direction, the reverse phenomenon was observed, i.e. the efficiency of the acousto-electronic interaction was reduced

  8. Theory of Covalent Adsorbate Frontier Orbital Energies on Functionalized Light-Absorbing Semiconductor Surfaces.

    Science.gov (United States)

    Yu, Min; Doak, Peter; Tamblyn, Isaac; Neaton, Jeffrey B

    2013-05-16

    Functional hybrid interfaces between organic molecules and semiconductors are central to many emerging information and solar energy conversion technologies. Here we demonstrate a general, empirical parameter-free approach for computing and understanding frontier orbital energies - or redox levels - of a broad class of covalently bonded organic-semiconductor surfaces. We develop this framework in the context of specific density functional theory (DFT) and many-body perturbation theory calculations, within the GW approximation, of an exemplar interface, thiophene-functionalized silicon (111). Through detailed calculations taking into account structural and binding energetics of mixed-monolayers consisting of both covalently attached thiophene and hydrogen, chlorine, methyl, and other passivating groups, we quantify the impact of coverage, nonlocal polarization, and interface dipole effects on the alignment of the thiophene frontier orbital energies with the silicon band edges. For thiophene adsorbate frontier orbital energies, we observe significant corrections to standard DFT (∼1 eV), including large nonlocal electrostatic polarization effects (∼1.6 eV). Importantly, both results can be rationalized from knowledge of the electronic structure of the isolated thiophene molecule and silicon substrate systems. Silicon band edge energies are predicted to vary by more than 2.5 eV, while molecular orbital energies stay similar, with the different functional groups studied, suggesting the prospect of tuning energy alignment over a wide range for photoelectrochemistry and other applications.

  9. Initiation of explosive conversions in energy-saturated nanoporous silicon-based compounds with fast semiconductor switches and energy-releasing elements

    Science.gov (United States)

    Savenkov, G. G.; Kardo-Sysoev, A. F.; Zegrya, A. G.; Os'kin, I. A.; Bragin, V. A.; Zegrya, G. G.

    2017-10-01

    The first findings concerning the initiation of explosive conversions in energy-saturated nanoporous silicon-based compounds via the electrical explosion of a semiconductor bridge are presented. The obtained results indicate that the energy parameters of an explosive conversion depend on the mass of a combustible agent—namely, nanoporous silicon—and the silicon-doping type.

  10. Ultra-broadband and wide-angle perfect absorber based on composite metal-semiconductor grating

    Science.gov (United States)

    Li, Xu; Wang, Zongpeng; Hou, Yumin

    2018-01-01

    In this letter, we present an ultra-broadband and wide-angle perfect absorber based on composite Ge-Ni grating. Near perfect absorption above 90% is achieved in a wide frequency range from 150 nm to 4200 nm, which covers almost the full spectrum of solar radiation. The absorption keeps robust in a wide range of incident angle from 0º to 60º. The upper triangle Ge grating works as an antireflection coating. The lower Ni grating works as a reflector and an effective energy trapper. The guided modes inside Ge grating are excited due to reflection of the lower Ni grating surface. In longer wavelength band, gap surface plasmons (GSPs) in the Ni grating are excited and couple with the guided modes inside the Ge grating. The coupled modes extend the perfect absorption band to the near-infrared region (150 nm-4200 nm). This design has potential application in photovoltaic devices and thermal emitters.

  11. Frequency modulation of semiconductor disk laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Zolotovskii, I O; Korobko, D A; Okhotnikov, O G [Ulyanovsk State University, Ulyanovsk (Russian Federation)

    2015-07-31

    A numerical model is constructed for a semiconductor disk laser mode-locked by a semiconductor saturable absorber mirror (SESAM), and the effect that the phase modulation caused by gain and absorption saturation in the semiconductor has on pulse generation is examined. The results demonstrate that, in a laser cavity with sufficient second-order dispersion, alternating-sign frequency modulation of pulses can be compensated for. We also examine a model for tuning the dispersion in the cavity of a disk laser using a Gires–Tournois interferometer with limited thirdorder dispersion. (control of radiation parameters)

  12. Diode-Pumped Quasi-Three-Level Passively Q-Switched Nd:GGG Laser with a Codoped Nd,Cr:YAG Saturable Absorber

    International Nuclear Information System (INIS)

    Kun-Na, He; Chun-Qing, Gao; Zhi-Yi, Wei; Qi-Nan, Li; Zhi-Guo, Zhang; Hai-He, Jiang; Shao-Tang, Yin; Qing-Li, Zhang

    2009-01-01

    We demonstrate the first quasi-three-level passively Q-switched Nd:GGG laser at 937 nm using a Nd,Cr:YAG crystal as the saturable absorber. The dependences of the average output power, the repetition rate and the pulse width on the incident pump power are obtained. A maximum average output power of 1.18 W with repetition rate of 35 kHz and pulse width of 45 ns is achieved at an incident pump power of 18.3 W. The corresponding optical-to-optical and slope efficiencies are 6% and 10%, respectively

  13. Experimental demonstration of an Er-doped fiber ring laser mode-locked with a Tm–Ho co-doped fiber saturable absorber

    International Nuclear Information System (INIS)

    Tao, Mengmeng; Wu, Junjie; Wu, Yong; Yang, Pengling; Ye, Xisheng; Peng, Junsong

    2013-01-01

    Mode-locking operation of an Er-doped fiber laser with a Tm–Ho co-doped fiber saturable absorber is demonstrated for the first time. Q-switching, Q-switched mode-locking and CW mode-locking operation modes are observed sequentially with increase of the pump power. In the mode-locking operation mode, a repetition rate at the fundamental cavity frequency of 9.05 MHz is obtained with a pulse duration of 46.3 ns. By rotating the polarization controller, a repetition rate up to 887 MHz is achieved, and the pulse duration is shortened to 0.548 ns. (paper)

  14. The simultaneous generation of soliton bunches and Q-switched-like pulses in a partially mode-locked fiber laser with a graphene saturable absorber

    Science.gov (United States)

    Wang, Zhenhong; Wang, Zhi; Liu, Yan-ge; He, Ruijing; Wang, Guangdou; Yang, Guang; Han, Simeng

    2018-05-01

    We experimentally report the coexistence of soliton bunches and Q-switched-like pulses in a partially mode-locked fiber laser with a microfiber-based graphene saturable absorber. The soliton bunches, like isolated spikes with extreme amplitude and ultrashort duration, randomly generate in the background of the Q-switched-like pulses. The soliton bunches have some pulse envelopes in which pulses operate at a fundamental repetition rate in the temporal domain. Further investigation shows that the composite pulses are highly correlated with the noise-like pulses. Our work can make a further contribution to enrich the understanding of the nonlinear dynamics in fiber lasers.

  15. Passively Q-switched of EDFL employing multi-walled carbon nanotubes with diameter less than 8 nm as saturable absorber

    Directory of Open Access Journals (Sweden)

    Zuikafly Siti Nur Fatin

    2017-01-01

    Full Text Available The paper demonstrates passively Q-switched erbium-doped fiber laser implementing multiwalled carbon nanotubes (MWCNTs based saturable absorber. The paper is the first to report the use of the MWCNTs with diameter less than 8 nm as typically, the diameter used is 10 to 20 nm. The MWCNTs is incorporated with water soluble host polymer, polyvinyl alcohol (PVA to produce a MWCNTs polymer composite thin film which is then sandwiched between two fiber connectors. The fabricated SA is employed in the laser experimental setup in ring cavity. The Q-switching regime started at threshold pump power of 103 mW and increasable to 215 mW. The stable pulse train from 41.6 kHz to 76.92 kHz with maximum average output power and pulse energy of 0.17 mW and 3.39 nJ are produced. The shortest pulse width of 1.9 μs is obtained in the proposed experimental work, making it the lowest pulse width ever reported using MWCNTs-based saturable absorber.

  16. Passive harmonic mode-locking of Er-doped fiber laser using CVD-grown few-layer MoS2 as a saturable absorber

    International Nuclear Information System (INIS)

    Xia Han-Ding; Li He-Ping; Lan Chang-Yong; Li Chun; Deng Guang-Lei; Li Jian-Feng; Liu Yong

    2015-01-01

    Passive harmonic mode locking of an erbium-doped fiber laser based on few-layer molybdenum disulfide (MoS 2 ) saturable absorber (SA) is demonstrated. The few-layer MoS 2 is prepared by the chemical vapor deposition (CVD) method and then transferred onto the end face of a fiber connector to form a fiber-compatible MoS 2 SA. The 20th harmonic mode-locked pulses at 216-MHz repetition rate are stably generated with a pulse duration of 1.42 ps and side-mode suppression ratio (SMSR) of 36.1 dB. The results confirm that few-layer MoS 2 can serve as an effective SA for mode-locked fiber lasers. (paper)

  17. Tunable Q-switched erbium doped fiber laser based on metal transition oxide saturable absorber and refractive index characteristic of multimode interference effects

    Science.gov (United States)

    Mohammed, D. Z.; Khaleel, Wurood Abdulkhaleq; Al-Janabi, A. H.

    2017-12-01

    Ferro-oxide (Fe3O4) nanoparticles were used as a saturable absorber (SA) for a passively Q-switched erbium doped fiber laser (EDFL) with ring cavity. The Q-switching operation was achieved at a pump threshold of 80 mW. The proposed fiber laser produces stable pulses train of repetition rate ranging from 25 kHz to 80 kHz as the pump power increases from threshold to 342 mW. The minimum recorded pulse width was 2.7 μs at 342 mW. The C-band tunability operation was performed using single mode-multimode-single mode fiber (SM-MM-SM) structure. The laser exhibited a total tuning range of 7 nm, maximum sensitivity of 106.9 nm, optical signal to noise ratio (OSNR) of 38 dB and 3-dB linewidth of 0.06 nm.

  18. Repetition frequency scaling of an all-polarization maintaining erbium-doped mode-locked fiber laser based on carbon nanotubes saturable absorber

    Energy Technology Data Exchange (ETDEWEB)

    Sotor, J., E-mail: jaroslaw.sotor@pwr.edu.pl; Sobon, G.; Abramski, K. M. [Laser and Fiber Electronics Group, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Jagiello, J.; Lipinska, L. [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland)

    2015-04-07

    We demonstrate an all-polarization maintaining (PM), mode-locked erbium (Er)-doped fiber laser based on a carbon nanotubes (CNT) saturable absorber (SA). The laser resonator was maximally simplified by using only one passive hybrid component and a pair of fiber connectors with deposited CNTs. The repetition frequency (F{sub rep}) of such a cost-effective and self-starting mode-locked laser was scaled from 54.3 MHz to 358.6 MHz. The highest F{sub rep} was obtained when the total cavity length was shortened to 57 cm. The laser allows ultrashort pulse generation with the duration ranging from 240 fs to 550 fs. Because the laser components were based on PM fibers the laser was immune to the external perturbations and generated laniary polarized light with the degree of polarization (DOP) of 98.7%.

  19. MoTe2 saturable absorber for passively Q-switched Ho,Pr:LiLuF4 laser at ∼3 μm

    Science.gov (United States)

    Yan, Zhengyu; Li, Tao; Zhao, Shengzhi; Yang, Kejian; Li, Dechun; Li, Guiqiu; Zhang, Shuaiyi; Gao, Zijing

    2018-03-01

    Multilayer molybdenum ditelluride (MoTe2) nanosheets were prepared by liquid-phase exfoliation (LPE) method. A YAG-based MoTe2 saturable absorption (SA) was consequently fabricated. The MoTe2-SA was employed in a passively Q-switched Ho,Pr:LiLuF4 laser at 2.95 μm. Under the absorbed pump power of 3.8 W, an average output power of 90 mW was achieved. The shortest pulse duration of 670 ns was generated with an output power of 73 mW and a repetition rate of 76.46 kHz, corresponding to a pulse energy of 0.95 μJ.

  20. Tunable continuous wave and passively Q-switched Nd:LuLiF4 laser with monolayer graphene as saturable absorber

    International Nuclear Information System (INIS)

    Wang, Feng; Luo, Jianjun; Li, Shixia; Li, Tao; Li, Ming

    2015-01-01

    Tunable continuous wave and passively Q-switched Nd:LuLiF 4 laser performances were demonstrated. Employing a 2 mm thick quartz plate as the birefringence filter, three continuous tuning ranges from 1045.2 to 1049.9 nm, 1051 to 1055.1 nm and 1072.1 to 1074.3 nm could be obtained. Q-switched laser operation was realized by using a monolayer graphene as a saturable absorber. At an incident pump power of 5.94 W, the maximum average output power was 669 mW with the pulse duration of 210 ns and the pulse repetition rate of 145 kHz at T = 10%. (paper)

  1. Passive Q-switching of femtosecond-laser-written Tm:KLu(WO4)2 waveguide lasers by graphene and MoS2 saturable absorbers

    Science.gov (United States)

    Kifle, Esrom; Mateos, Xavier; Vázquez de Aldana, Javier Rodríguez; Ródenas, Airan; Loiko, Pavel; Zakharov, Viktor; Veniaminov, Andrey; Yu, Haohai; Zhang, Huaijin; Chen, Yanxue; Aguiló, Magdalena; Díaz, Francesc; Griebner, Uwe; Petrov, Valentin

    2018-02-01

    A buried depressed-index channel waveguide with a circular cladding and a core diameter of 40 μm is fabricated in a bulk monoclinic 3 at.% Tm:KLu(WO4)2 crystal by femtosecond direct laser writing. In the continuous-wave regime, the Tm waveguide laser generates 210 mW at 1849.6 nm with a slope efficiency η of 40.8%. Passively Q-switched operation is achieved by inserting transmission-type 2D saturable absorbers (SAs) based on few-layer graphene and MoS2. Using the graphene-SA, a maximum average output power of 25 mW is generated at 1844.8 nm. The pulse characteristics (duration/energy) are 88 ns/18 nJ at a repetition rate of 1.39 MHz.

  2. Generation of “gigantic” ultra-short microwave pulses based on passive mode-locking effect in electron oscillators with saturable absorber in the feedback loop

    International Nuclear Information System (INIS)

    Ginzburg, N. S.; Denisov, G. G.; Vilkov, M. N.; Zotova, I. V.; Sergeev, A. S.

    2016-01-01

    A periodic train of powerful ultrashort microwave pulses can be generated in electron oscillators with a non-linear saturable absorber installed in the feedback loop. This method of pulse formation resembles the passive mode-locking widely used in laser physics. Nevertheless, there is a specific feature in the mechanism of pulse amplification when consecutive energy extraction from different fractions of a stationary electron beam takes place due to pulse slippage over the beam caused by the difference between the wave group velocity and the electron axial velocity. As a result, the peak power of generated “gigantic” pulses can exceed not only the level of steady-state generation but also, in the optimal case, the power of the driving electron beam.

  3. Tunable single-polarization single-longitudinal-mode erbium-doped fiber ring laser employing a CMFBG filter and saturable absorber

    Science.gov (United States)

    Feng, Suchun; Lu, Shaohua; Peng, Wanjing; Li, Qi; Feng, Ting; Jian, Shuisheng

    2013-04-01

    A tunable single-polarization single-longitudinal-mode (SLM) erbium-doped fiber ring laser is proposed and demonstrated. For the first time as we know, a chirped moiré fiber Bragg grating (CMFBG) filter with ultra-narrow transmission band and a uniform fiber Bragg grating (UFBG) are used to select the laser longitudinal mode. The stable SLM operation of the fiber laser is guaranteed by the combination of the CMFBG filter and 3 m unpumped erbium-doped fiber acting as a saturable absorber. The single polarization operation of the fiber laser is obtained by using an inline broadband polarizer. A tuning range of about 0.7 nm with about 0.1 nm step is achieved by stretching the uniform FBG.

  4. Mode-locked Er-doped fiber laser based on PbS/CdS core/shell quantum dots as saturable absorber.

    Science.gov (United States)

    Ming, Na; Tao, Shina; Yang, Wenqing; Chen, Qingyun; Sun, Ruyi; Wang, Chang; Wang, Shuyun; Man, Baoyuan; Zhang, Huanian

    2018-04-02

    Previously, PbS/CdS core/shell quantum dots with excellent optical properties have been widely used as light-harvesting materials in solar cell and biomarkers in bio-medicine. However, the nonlinear absorption characteristics of PbS/CdS core/shell quantum dots have been rarely investigated. In this work, PbS/CdS core/shell quantum dots were successfully employed as nonlinear saturable absorber (SA) for demonstrating a mode-locked Er-doped fiber laser. Based on a film-type SA, which was prepared by incorporating the quantum dots with the polyvinyl alcohol (PVA), mode-locked Er-doped operation with a pulse width of 54 ps and a maximum average output power of 2.71 mW at the repetition rate of 3.302 MHz was obtained. Our long-time stable results indicate that the CdS shell can effectively protect the PbS core from the effect of photo-oxidation and PbS/CdS core/shell quantum dots were efficient SA candidates for demonstrating pulse fiber lasers due to its tunable absorption peak and excellent saturable absorption properties.

  5. Nonlinear absorbing cationic iridium(III) complexes bearing benzothiazolylfluorene motif on the bipyridine (N∧N) ligand: synthesis, photophysics and reverse saturable absorption.

    Science.gov (United States)

    Li, Yuhao; Dandu, Naveen; Liu, Rui; Hu, Lei; Kilina, Svetlana; Sun, Wenfang

    2013-07-24

    reverse saturable absorbers at 532 nm and could potentially be used as broadband nonlinear absorbing materials.

  6. GaSe:Cd semiconductor - own oxide nanolamellar structures as a selective gas absorber; Structuri nanolamelare semiconductor GaSe:Cd - oxid propriu ca adsorbant selectiv de gaze

    Energy Technology Data Exchange (ETDEWEB)

    Dmitroglo, Liliana; Evtodiev, Igor; Lazar, Gheorghe [Univ. de Stat din Moldova, Chisinau (Moldova, Republic of); Caraman, Iuliana [Univ. ' Vasile Alecsandri' din Bacau, Bacau (Romania); Dafinei, Adrian [Universitatea din Bucuresti, Bucuresti (Romania)

    2012-07-15

    A lamella with the thickness of 10-300 {mu}m and C6 axis oriented perpendicular to (001) surface were obtained from {epsilon}-GaSe single crystals grown by Bridgman method. By a heat treatment at the temperature of 450-580 degrees Celsius the lamella surfaces were coated with the own nanostructured (Ga{sub 2}O{sub 3}) oxide. The absorption of polar molecules from the (H{sub 2}O, CO, CON) atmosphere was studied by using absorptional IR spectroscopy. These molecules absorption bands and optical transparency dependence on the absorbed molecules concentration were determined. (authors)

  7. Passively Q-switched mode-locked Nd3+:LuVO4 laser by LT-GaAs saturable absorber

    International Nuclear Information System (INIS)

    Li, M; Zhao, S; Li, Y; Yang, K; Li, G; Li, D; An, J; Li, T; Yu, Z

    2009-01-01

    By using LT-GaAs as saturable absorber, we have demonstrated the stable Q-switched and mode-locked (QML) Nd:LuVO 4 laser run in a Z-type folded cavity. Nearly 100% modulation depth of mode locking can be obtained as long as the pump power reaches the oscillation threshold. The repetition rate of the passively Q-switched pulse envelops ranges from 37.5 to 139 kHz as the pump power increased from 1.7 to 8.2 W. The mode-locked pulse inside the Q-switched envelop has an estimated pulse width of about 220 ps and a repetition rate of 111 MHz. Under an incident pump power of 8.2 W, the highest pulse energy of 6 μJ of each Q-switched envelope, and the highest peak power about 2.73 kW of Q-switched mode-locked pulses can be obtained

  8. 300-MHz-repetition-rate, all-fiber, femtosecond laser mode-locked by planar lightwave circuit-based saturable absorber.

    Science.gov (United States)

    Kim, Chur; Kim, Dohyun; Cheong, YeonJoon; Kwon, Dohyeon; Choi, Sun Young; Jeong, Hwanseong; Cha, Sang Jun; Lee, Jeong-Woo; Yeom, Dong-Il; Rotermund, Fabian; Kim, Jungwon

    2015-10-05

    We show the implementation of fiber-pigtailed, evanescent-field-interacting, single-walled carbon nanotube (CNT)-based saturable absorbers (SAs) using standard planar lightwave circuit (PLC) fabrication processes. The implemented PLC-CNT-SA device is employed to realize self-starting, high-repetition-rate, all-fiber ring oscillators at telecommunication wavelength. We demonstrate all-fiber Er ring lasers operating at 303-MHz (soliton regime) and 274-MHz (stretched-pulse regime) repetition-rates. The 303-MHz (274-MHz) laser centered at 1555 nm (1550 nm) provides 7.5 nm (19 nm) spectral bandwidth. After extra-cavity amplilfication, the amplified pulse train of the 303-MHz (274-MHz) laser delivers 209 fs (178 fs) pulses. To our knowledge, this corresponds to the highest repetition-rates achieved for femtosecond lasers employing evanescent-field-interacting SAs. The demonstrated SA fabrication method, which is based on well-established PLC processes, also shows a potential way for mass-producible and lower-cost waveguide-type SA devices suitable for all-fiber and waveguide lasers.

  9. Passively Q-switched 1.6 µm Er:YAG laser with a γ-Ga2O3:Co-based glass-ceramics as a saturable absorber

    Science.gov (United States)

    Shi, Yang; Gao, Chunqing; Ye, Qing; Wang, Shuo; Wang, Qing; Gao, Mingwei; Loiko, Pavel; Skoptsov, Nikolai; Dymshits, Olga; Zhilin, Alexander; Zapalova, Svetlana; Tsenter, Marina; Vitkin, Vladimir; Mateos, Xavier; Yumashev, Konstantin

    2018-04-01

    A resonantly pumped passively Q-switched Er:YAG laser operating at 1.617 and 1.645 µm is reported with γ-Ga2O3:Co2+-based glass-ceramics (GCs) as a saturable absorber. The maximum average output power achieved from this laser was 273 mW; the highest pulse energy was 5.9 µJ, corresponding to a pulse duration of 3.0 µs at a repetition frequency of 31 kHz. To the best of our knowledge, this is the first time to use the γ-Ga2O3:Co2+-based GC as a passive Q-switcher for Er:YAG lasers and this is also the first time to obtain 1.617 µm and 1.645 µm pulses with a GC-based saturable absorber.

  10. Mathematical solutions of rate equations of a laser-diode end-pumped passively Q-switched and mode locked Nd-laser with Cr4+:YAG polarized saturable absorber

    International Nuclear Information System (INIS)

    Abdul Ghani, B.; Hammadi, M.

    2012-01-01

    The intracavity frequency-doubling (IFD) of a simultaneous passively Q-switched mode-locked diode-pumped Nd 3 + - laser is studied with a polarized isotropic Cr 4 +: YAG saturable absorber. A general recurrence formula for the mode-locked pulses under the Q-switched envelope at fundamental wavelength has been reconstructed in order to analyze the temporal shape behavior of a single Q-switched envelope with mode-locking pulse trains. This formula has been derived taking into account the impact of the IFD and polarized Cr 4 +: YAG saturable absorber.The presented mathematical model describes the self-induced anisotropy appeared in the polarized Cr 4 +: YAG in the nonlinear stage of the giant pulse formation. For the anisotropic Nd 3 +: YVO 4 active medium, the generated polarized waves are assumed to be fixed through the lasing cycle. Besides, the maximum absorber initial transmission and the minimum mirror reflectivity values have been determined from the second threshold criterion. The calculated numerical results demonstrate the impact of the variation of the input laser parameters (rotational angle of the polarized crystal, absorber initial transmission and the output mirror reflectivity) on the characteristics of the output laser pulse (SH peak power, pulse width, pulse duration and shift pulse position of central mode). The calculated numerical results in this work is in good qualitative and quantitative agreement with the available experimental data reported in the references. (author)

  11. Caractérisation expérimentale et modélisation numérique des propriétés spectroscopiques d'absorbants saturables pour le déclenchement passif de laser verre erbium

    Science.gov (United States)

    Girard, S.; Shcherbitsky, V.; Fromager, M.; Aït Ameur, K.; Moncorgé, R.; Ferrand, B.; Montagne, J.

    2002-06-01

    Une comparaison entre différents absorbants saturables (LMA, MALO, ZnS et ZnSe dopés Col^+ et ZnSe dopé Cr^{2+}) utilisables comme interrupteur optique passif pour déclencher les sources lasers verre erbium à 1.53 μm est présentée. Des expériences de saturation en simple passage sont interprétées en tenant compte de la distribution spatiale et temporelle du laser de pompe. Cette technique permet d'obtenir des sections efficaces de saturation effectives fiables et indépendantes des conditions de mesure sans introduire artificiellement d'absorption dans l'état excité qui, en principe, n'existe pas dans ce type de système contrairement aux études effectuées jusqu'ici sur ces matériaux.

  12. Diode-pumped passively mode-locked Nd:LuVO4 laser with LT-In0.25Ga0.75As saturable absorber

    International Nuclear Information System (INIS)

    Li, T; Zhao, S; Li, Y; Zhuo, Z; Yang, K; Li, G; Li, D; Yu, Z

    2009-01-01

    A diode pumped passively mode-locked Nd:LuVO 4 laser with a low temperature (LT) In 0.25 Ga 0.75 As absorber is realized in this paper. An In 0.25 Ga 0.75 As single-quantum-well absorber, which is grown by use of the metal-organic chemical-vapor deposition technique, acts as nonlinear absorber and output coupler simultaneously. A special cavity is designed to keep the power density on In 0.25 Ga 0.75 As under its damage threshold. Both the Q-switched and continuous-wave (cw) mode locking operation are experimentally realized. An average output power of 5.9 W with pulse width of 4.9 ps is achieved at the pump power of 22 W, corresponding to an optical conversion efficiency of 26.8%

  13. FY1995 research on nonlinear optical devices using super-lattice semiconductors; 1995 nendo chokoshi active hisenkei soshi wo mochiita chokosoku hikari seigyo gijutsu no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    The purpose is to develop technologies on efficient generation and control of femtosecond optical pulses using a novel semiconductor optical devices. We studied a modelocked Cr:forsterite laser pumped by a diode pumped Nd:YVO4 laser. Both Kerr lens mode locking and semi-conductor saturable absorber initiated mode locking have been achieved. The minimum pulse width for pure Kerr lens mode locking is 26.4 fs, while for the semiconductor saturable absorber initiated mode locking, the pulse width is 36 fs. The latter is very resistant to the environment perturbations. We also present the measured dispersion data for the forsterite crystal and the SESAM, and discuss the dispersion compensation technique. (NEDO)

  14. Digital Alloy Absorber for Photodetectors

    Science.gov (United States)

    Hill, Cory J. (Inventor); Ting, David Z. (Inventor); Gunapala, Sarath D. (Inventor)

    2016-01-01

    In order to increase the spectral response range and improve the mobility of the photo-generated carriers (e.g. in an nBn photodetector), a digital alloy absorber may be employed by embedding one (or fraction thereof) to several monolayers of a semiconductor material (insert layers) periodically into a different host semiconductor material of the absorber layer. The semiconductor material of the insert layer and the host semiconductor materials may have lattice constants that are substantially mismatched. For example, this may performed by periodically embedding monolayers of InSb into an InAsSb host as the absorption region to extend the cutoff wavelength of InAsSb photodetectors, such as InAsSb based nBn devices. The described technique allows for simultaneous control of alloy composition and net strain, which are both key parameters for the photodetector operation.

  15. Perovskite semiconductor La(Ni{sub 0.75}W{sub 0.25})O{sub 3} nanoparticles for visible-light-absorbing photocatalytic material

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Lei; Xie, Hongde, E-mail: xiehongde@suda.edu.cn; Pu, Yinfu; Huang, Yanlin [Soochow University, State and Local Joint Engineering Laboratory for Novel Functional Polymeric Materials, College of Chemistry, Chemical Engineering and Materials Science (China); Qin, Lin; Seo, Hyo Jin, E-mail: hjseo@pknu.ac.kr [Pukyong National University, Department of Physics and Interdisciplinary Program of Biomedical, Mechanical & Electrical Engineering (Korea, Republic of)

    2017-01-15

    La(Ni{sub 0.75}W{sub 0.25})O{sub 3} perovskite oxide was prepared via the sol–gel Pechini route. The pure crystalline phase was verified via X-ray diffraction measurements and Rietveld structure refinements. Some measurements were applied to characterize the surface of the nanoparticles such as transmission electron microscopy, scanning electron microscope, energy-dispersive X-ray spectroscopy, specific surface area, and X-ray photo-electron spectroscopy measurements. The optical measurement confirmed that this perovskite oxide can absorb the visible light presenting low band energy of 2.41 eV. The d–d allowed transitions in Ni{sup 2+}-O octahedral have great contributions to the narrow band-gap. The Ni{sup 2+}-containing perovskite was applied as a photocatalyst showing the desirable photodegradation ability for methylene blue solutions under the excitation of visible-light. The photocatalysis activities were discussed in the relationship with its special perovskite-type structure such as the NiO{sub 6} color centers and multivalent cation ions etc.

  16. Shock absorber

    International Nuclear Information System (INIS)

    Housman, J.J.

    1978-01-01

    A shock absorber is described for use in a hostile environment at the end of a blind passage for absorbing impact loads. The shock absorber includes at least one element which occupies the passage and which is comprised of a porous brittle material which is substantially non-degradable in the hostile environment. A void volume is provided in the element to enable the element to absorb a predetermined level of energy upon being crushed due to impact loading

  17. Terahertz Nonlinear Optics in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

  18. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  19. Absorbant materials

    International Nuclear Information System (INIS)

    Quetier, Monique.

    1978-11-01

    Absorbants play a very important part in the nuclear industry. They serve for the control, shut-down and neutron shielding of reactors and increase the capacity of spent fuel storage pools and of special transport containers. This paper surveys the usual absorbant materials, means of obtainment, their essential characteristics relating to their use and their behaviour under neutron irradiation [fr

  20. Absorbed dose by a CMOS in radiotherapy

    International Nuclear Information System (INIS)

    Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R.; Paredes G, L. C.

    2011-10-01

    Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

  1. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  2. Sound Absorbers

    Science.gov (United States)

    Fuchs, H. V.; Möser, M.

    Sound absorption indicates the transformation of sound energy into heat. It is, for instance, employed to design the acoustics in rooms. The noise emitted by machinery and plants shall be reduced before arriving at a workplace; auditoria such as lecture rooms or concert halls require a certain reverberation time. Such design goals are realised by installing absorbing components at the walls with well-defined absorption characteristics, which are adjusted for corresponding demands. Sound absorbers also play an important role in acoustic capsules, ducts and screens to avoid sound immission from noise intensive environments into the neighbourhood.

  3. Shock absorber

    International Nuclear Information System (INIS)

    Nemeth, J.D.

    1981-01-01

    A shock absorber for the support of piping and components in a nuclear power plant is described. It combines a high degree of stiffness under sudden shocks, e.g. seismic disturbances, with the ability to allow for thermal expansion without resistance when so required. (JIW)

  4. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  5. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  6. Dispersion-induced nonlinearities in semiconductors

    DEFF Research Database (Denmark)

    Mørk, Jesper; Mecozzi, A.

    2002-01-01

    A dispersive and saturable medium is shown, under very general conditions, to possess ultrafast dynamic behaviour due to non-adiabatic polarisation dynamics. Simple analytical expressions relating the effect to the refractive index dispersion of a semiconductor ire derived and the magnitude...... of the equivalent Kerr coefficient is shown to be in qualitative agreement with measurements on active semiconductor waveguides....

  7. Slow Light at High Frequencies in an Amplifying Semiconductor Waveguide

    DEFF Research Database (Denmark)

    Öhman, Filip; Yvind, Kresten; Mørk, Jesper

    2006-01-01

    We demonstrate slow-down of a modulated light signal in a semiconductor waveguide. Concatenated amplifying and absorbing sections simultaneously achieve both amplification and a controllable time delay at 15 GHz.......We demonstrate slow-down of a modulated light signal in a semiconductor waveguide. Concatenated amplifying and absorbing sections simultaneously achieve both amplification and a controllable time delay at 15 GHz....

  8. Nonlinear Gain Saturation in Active Slow Light Photonic Crystal Waveguides

    DEFF Research Database (Denmark)

    Chen, Yaohui; Mørk, Jesper

    2013-01-01

    We present a quantitative three-dimensional analysis of slow-light enhanced traveling wave amplification in an active semiconductor photonic crystal waveguides. The impact of slow-light propagation on the nonlinear gain saturation of the device is investigated.......We present a quantitative three-dimensional analysis of slow-light enhanced traveling wave amplification in an active semiconductor photonic crystal waveguides. The impact of slow-light propagation on the nonlinear gain saturation of the device is investigated....

  9. Absorbed dose by a CMOS in radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L. C., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2011-10-15

    Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

  10. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  11. High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

    Directory of Open Access Journals (Sweden)

    Andreas Schmitt-Sody

    2008-01-01

    Full Text Available We report on hybrid mode-locked laser operation of a tapered semiconductor amplifier in an external ring cavity, generating pulses as short as 0.5 ps at 88.1 MHz with an average power of 60 mW. The mode locking is achieved through a combination of a multiple quantum well saturable absorber (>10% modulation depth and an RF current modulation. This designed laser has 20 nm tuning bandwidth in continuous wave and 10 nm tuning bandwidth in mode locking around 786 nm center wavelength at constant temperature.

  12. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  13. Patterning via optical-saturable transformations: A review and simple simulation model

    Energy Technology Data Exchange (ETDEWEB)

    Cantu, Precious; Menon, Rajesh, E-mail: cantu@eng.utah.edu [Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Andrew, Trisha L. [Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2014-11-10

    Most of the nanoscale fabrication in the semiconductor industry is based on patterning with scanning-electron beam lithography (SEBL). Although this approach is very versatile and has very high resolution, it is intrinsically a serial writing process, and therefore, relatively slow. Our group has been investigating alternative nano-fabrication techniques, adapted from ideas of saturating optical transitions such as those used in stimulated emission-depletion microscopy and related methods, and optical interference lithography. Linewidths and resolutions on the scale of a few tens of nanometers and below are highly desirable for various applications in nanotechnology. However, the spatial resolution of optical lithography is restricted by diffraction. In the past, we developed absorbance modulation to overcome this limit. This approach utilizes photochromic molecules that can be optically switched between two thermally stable states, one opaque and the other transparent. However, absorbance modulation is limited to surface (2-D) patterning. Here, we report on an alternative approach that exploits unique combinations of spectrally selective reversible and irreversible photochemical transitions to achieve deep subwavelength resolution with potential extension to 3-dimensions. This approach, which we refer to as patterning via optical-saturable transformations have the potential for massive parallelism, enabling the creation of nanostructures and devices at a speed far surpassing what is possible with SEBL. The aim of our research is to translate the success in circumventing Abbe's diffraction limit in optical microscopy to optical lithography.

  14. Patterning via optical-saturable transformations: A review and simple simulation model

    International Nuclear Information System (INIS)

    Cantu, Precious; Menon, Rajesh; Andrew, Trisha L.

    2014-01-01

    Most of the nanoscale fabrication in the semiconductor industry is based on patterning with scanning-electron beam lithography (SEBL). Although this approach is very versatile and has very high resolution, it is intrinsically a serial writing process, and therefore, relatively slow. Our group has been investigating alternative nano-fabrication techniques, adapted from ideas of saturating optical transitions such as those used in stimulated emission-depletion microscopy and related methods, and optical interference lithography. Linewidths and resolutions on the scale of a few tens of nanometers and below are highly desirable for various applications in nanotechnology. However, the spatial resolution of optical lithography is restricted by diffraction. In the past, we developed absorbance modulation to overcome this limit. This approach utilizes photochromic molecules that can be optically switched between two thermally stable states, one opaque and the other transparent. However, absorbance modulation is limited to surface (2-D) patterning. Here, we report on an alternative approach that exploits unique combinations of spectrally selective reversible and irreversible photochemical transitions to achieve deep subwavelength resolution with potential extension to 3-dimensions. This approach, which we refer to as patterning via optical-saturable transformations have the potential for massive parallelism, enabling the creation of nanostructures and devices at a speed far surpassing what is possible with SEBL. The aim of our research is to translate the success in circumventing Abbe's diffraction limit in optical microscopy to optical lithography

  15. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  16. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  17. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  18. Optical Regeneration and Noise in Semiconductor Devices

    DEFF Research Database (Denmark)

    Öhman, Filip

    2005-01-01

    In this report all-optical 2R-regeneration in optical communication systems is investigated. A simple regenerator device based on concatenated semiconductor optical amplifiers (SOAs) and electro absorbers (EAs) is introduced and examined. Experiments show that the monolithic SOA-EA 2R-regenerator......In this report all-optical 2R-regeneration in optical communication systems is investigated. A simple regenerator device based on concatenated semiconductor optical amplifiers (SOAs) and electro absorbers (EAs) is introduced and examined. Experiments show that the monolithic SOA-EA 2R...

  19. Receptor saturation in roentgen films

    Energy Technology Data Exchange (ETDEWEB)

    Strid, K G; Reichmann, S [Sahlgrenska Sjukhuset, Goeteborg (Sweden)

    1980-01-01

    Roentgen-film recording of small object details of low attenuation differences (e.g. pulmonary vessels) is regularly seen to be impaired when the film is exposed to yield high values of optical density (D). This high-density failure is due to receptor saturation, which implies that at high exposure values most silver halide grains of the film are made developable, leaving few grains available to receive additional informative photons. The receptor saturation is analysed by means of a mathematical model of a non-screen film yielding Dsub(max) = 2.0. Optimum recording, defined by maximum signal-to-noise ratio in the image, is found at D approximately 0.64, corresponding to, on an average, 1.6 photons absorbed per grain. On the other hand, maximum contrast occurs at D approximately 1.4, where, on the average, 3.6 photons are absorbed per grain. The detective quantum efficiency of the film, i.e. the fraction of the photons actually contributing to the information content of the image, drops from 41 per cent at maximum signal-to-noise ratio to a mere 10 per cent at maximum contrast.

  20. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  1. Radioactive iodine absorbing properties of tetrathiafulvalene

    Energy Technology Data Exchange (ETDEWEB)

    Ito, Tomiyasu; Nakamura, Asao (Ajinomoto Co. Inc., Kawasaki, Kanagawa (Japan). Central Research Labs.); Nogawa, Norio; Oohashi, Kunio; Morikawa, Naotake

    1989-05-01

    For the purpose of searching some effective absorbents of gaseous radioactive iodine, 16 substances considered as having an affinity for iodine were investigated with regular iodine and /sup 125/I. In a preliminary survey, only tetrathiafulvalene (TTF) was found to have satisfactory absorbing properties comparable to activated charcoal. A further detailed comparison of the properties between TTF and activated charcoal led us to the conclusion that the former has more preferable properties as absorbent of radioactive iodine than the latter in all points studied. The results are summarized as follows: (1) The absorption of iodine on TTF in atmosphere was about twice as much as that on activated charcoal. Desorption of iodine from saturatedly absorbed iodine on TTF was practically negligible except trace amount of initial desorption, while that on activated charcoal was considerable (3%/50h) even in the air at room temperature. (2) Absorbed amount of iodine on activated charcoal decreased with increasing gaseous iodine concentration, air flow rate, on humidity of flowing-air. On the other hand, those factors scarcely affected that on TTF. Under an air flow rate of 1m/s, activated charcoal absorbs only 80% of iodine, while TTF absorbs more than 99%. (3) In flowing-air saturated with water vapor, iodine absorbed on activated charcoal was gradually liberated although by small amount (0.08%/100h), while that on TTF was much more stable for a long period (0.004%/100h). As a conclusion, TTF is considered to be useful as a quite effective radioactive iodine absorbent, especially in the case where protection from radioactive iodine should be serious, though it is expensive now. (author).

  2. Radioactive iodine absorbing properties of tetrathiafulvalene

    International Nuclear Information System (INIS)

    Ito, Tomiyasu; Nakamura, Asao; Nogawa, Norio; Oohashi, Kunio; Morikawa, Naotake.

    1989-01-01

    For the purpose of searching some effective absorbents of gaseous radioactive iodine, 16 substances considered as having an affinity for iodine were investigated with regular iodine and 125 I. In a preliminary survey, only tetrathiafulvalene (TTF) was found to have satisfactory absorbing properties comparable to activated charcoal. A further detailed comparison of the properties between TTF and activated charcoal led us to the conclusion that the former has more preferable properties as absorbent of radioactive iodine than the latter in all points studied. The results are summarized as follows: (1) The absorption of iodine on TTF in atmosphere was about twice as much as that on activated charcoal. Desorption of iodine from saturatedly absorbed iodine on TTF was practically negligible except trace amount of initial desorption, while that on activated charcoal was considerable (3%/50h) even in the air at room temperature. (2) Absorbed amount of iodine on activated charcoal decreased with increasing gaseous iodine concentration, air flow rate, on humidity of flowing-air. On the other hand, those factors scarcely affected that on TTF. Under an air flow rate of 1m/s, activated charcoal absorbs only 80% of iodine, while TTF absorbs more than 99%. (3) In flowing-air saturated with water vapor, iodine absorbed on activated charcoal was gradually liberated although by small amount (0.08%/100h), while that on TTF was much more stable for a long period (0.004%/100h). As a conclusion, TTF is considered to be useful as a quite effective radioactive iodine absorbent, especially in the case where protection from radioactive iodine should be serious, though it is expensive now. (author)

  3. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  4. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  5. Patterning via optical saturable transitions

    Science.gov (United States)

    Cantu, Precious

    For the past 40 years, optical lithography has been the patterning workhorse for the semiconductor industry. However, as integrated circuits have become more and more complex, and as device geometries shrink, more innovative methods are required to meet these needs. In the far-field, the smallest feature that can be generated with light is limited to approximately half the wavelength. This, so called far-field diffraction limit or the Abbe limit (after Prof. Ernst Abbe who first recognized this), effectively prevents the use of long-wavelength photons >300nm from patterning nanostructures barrier is developed and experimentally verified. This approach, which I refer to as Patterning via Optical Saturable Transitions (POST) has the potential for massive parallelism, enabling the creation of nanostructures and devices at a speed far surpassing what is currently possible with conventional optical lithographic techniques. The fundamental understanding of this technique goes beyond optical lithography in the semiconductor industry and is applicable to any area that requires the rapid patterning of large-area two or three-dimensional complex geometries. At a basic level, this research intertwines the fields of electrochemistry, material science, electrical engineering, optics, physics, and mechanical engineering with the goal of developing a novel super-resolution lithographic technique.

  6. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  7. Shock absorbing structure

    International Nuclear Information System (INIS)

    Kojima, Naoki; Matsushita, Kazuo.

    1992-01-01

    Small pieces of shock absorbers are filled in a space of a shock absorbing vessel which is divided into a plurality of sections by partitioning members. These sections function to prevent excess deformation or replacement of the fillers upon occurrence of falling accident. Since the shock absorbing small pieces in the shock absorbing vessel are filled irregularly, shock absorbing characteristics such as compression strength is not varied depending on the direction, but they exhibit excellent shock absorbing performance. They surely absorb shocks exerted on a transportation vessel upon falling or the like. If existing artificial fillers such as pole rings made of metal or ceramic and cut pieces such as alumium extrusion molding products are used as the shock absorbing pieces, they have excellent fire-proofness and cold resistance since the small pieces are inflammable and do not contain water. (T.M.)

  8. Neutron absorbed dose in a pacemaker CMOS

    International Nuclear Information System (INIS)

    Borja H, C. G.; Guzman G, K. A.; Valero L, C.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R.; Paredes G, L.

    2012-01-01

    The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor (CMOS), has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1.522 x 10 -17 Gy per neutron emitted by the source. (Author)

  9. Neutron absorbed dose in a pacemaker CMOS

    Energy Technology Data Exchange (ETDEWEB)

    Borja H, C. G.; Guzman G, K. A.; Valero L, C.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: fermineutron@yahoo.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2012-06-15

    The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor (CMOS), has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1.522 x 10{sup -17} Gy per neutron emitted by the source. (Author)

  10. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  11. Saturated Switching Systems

    CERN Document Server

    Benzaouia, Abdellah

    2012-01-01

    Saturated Switching Systems treats the problem of actuator saturation, inherent in all dynamical systems by using two approaches: positive invariance in which the controller is designed to work within a region of non-saturating linear behaviour; and saturation technique which allows saturation but guarantees asymptotic stability. The results obtained are extended from the linear systems in which they were first developed to switching systems with uncertainties, 2D switching systems, switching systems with Markovian jumping and switching systems of the Takagi-Sugeno type. The text represents a thoroughly referenced distillation of results obtained in this field during the last decade. The selected tool for analysis and design of stabilizing controllers is based on multiple Lyapunov functions and linear matrix inequalities. All the results are illustrated with numerical examples and figures many of them being modelled using MATLAB®. Saturated Switching Systems will be of interest to academic researchers in con...

  12. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  13. Methods for absorbing neutrons

    Science.gov (United States)

    Guillen, Donna P [Idaho Falls, ID; Longhurst, Glen R [Idaho Falls, ID; Porter, Douglas L [Idaho Falls, ID; Parry, James R [Idaho Falls, ID

    2012-07-24

    A conduction cooled neutron absorber may include a metal matrix composite that comprises a metal having a thermal neutron cross-section of at least about 50 barns and a metal having a thermal conductivity of at least about 1 W/cmK. Apparatus for providing a neutron flux having a high fast-to-thermal neutron ratio may include a source of neutrons that produces fast neutrons and thermal neutrons. A neutron absorber positioned adjacent the neutron source absorbs at least some of the thermal neutrons so that a region adjacent the neutron absorber has a fast-to-thermal neutron ratio of at least about 15. A coolant in thermal contact with the neutron absorber removes heat from the neutron absorber.

  14. Gluon saturation in a saturated environment

    International Nuclear Information System (INIS)

    Kopeliovich, B. Z.; Potashnikova, I. K.; Schmidt, Ivan

    2011-01-01

    A bootstrap equation for self-quenched gluon shadowing leads to a reduced magnitude of broadening for partons propagating through a nucleus. Saturation of small-x gluons in a nucleus, which has the form of transverse momentum broadening of projectile gluons in pA collisions in the nuclear rest frame, leads to a modification of the parton distribution functions in the beam compared with pp collisions. In nucleus-nucleus collisions all participating nucleons acquire enhanced gluon density at small x, which boosts further the saturation scale. Solution of the reciprocity equations for central collisions of two heavy nuclei demonstrate a significant, up to several times, enhancement of Q sA 2 , in AA compared with pA collisions.

  15. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    International Nuclear Information System (INIS)

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

  16. Ultrafast THz saturable absorption in doped semiconductors at room temperature

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, M. V.

    2011-01-01

    Ultrafast Phenomena XVII presents the latest advances in ultrafast science, including both ultrafast optical technology and the study of ultrafast phenomena. It covers picosecond, femtosecond and attosecond processes relevant to applications in physics, chemistry, biology, and engineering. Ultraf...

  17. Automatic NAA. Saturation activities

    International Nuclear Information System (INIS)

    Westphal, G.P.; Grass, F.; Kuhnert, M.

    2008-01-01

    A system for Automatic NAA is based on a list of specific saturation activities determined for one irradiation position at a given neutron flux and a single detector geometry. Originally compiled from measurements of standard reference materials, the list may be extended also by the calculation of saturation activities from k 0 and Q 0 factors, and f and α values of the irradiation position. A systematic improvement of the SRM approach is currently being performed by pseudo-cyclic activation analysis, to reduce counting errors. From these measurements, the list of saturation activities is recalculated in an automatic procedure. (author)

  18. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  19. Hydraulic shock absorbers

    International Nuclear Information System (INIS)

    Thatcher, G.; Davidson, D. F.

    1984-01-01

    A hydraulic shock absorber of the dash pot kind for use with electrically conducting liquid such as sodium, has magnet means for electro magnetically braking a stream of liquid discharged from the cylinder. The shock absorber finds use in a liquid metal cooled nuclear reactor for arresting control rods

  20. α-particle shielding of semiconductor device

    International Nuclear Information System (INIS)

    McKeown, P.J.A.; Perry, J.P.; Waddell, J.M.; Barker, K.D.

    1981-01-01

    Soft errors in semiconductor devices, e.g. random access memories, arising from the bombardment of the device by alpha particles produced by the disintegration of minute traces of uranium or thorium in the packaging materials are prevented by coating the active surface of the semiconductor chip with a thin layer, e.g. 20 to 100 microns of an organic polymeric material, this layer being of sufficient thickness to absorb the particles. Typically, the polymer is a poly-imide formed by u.v. electron-beam or thermal curing of liquid monomer applied to the chip surface. (author)

  1. Review of wide band-gap semiconductors technology

    Directory of Open Access Journals (Sweden)

    Jin Haiwei

    2016-01-01

    Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.

  2. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  3. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  4. PWR burnable absorber evaluation

    International Nuclear Information System (INIS)

    Cacciapouti, R.J.; Weader, R.J.; Malone, J.P.

    1995-01-01

    The purpose of the study was to evaluate the relative neurotic efficiency and fuel cycle cost benefits of PWR burnable absorbers. Establishment of reference low-leakage equilibrium in-core fuel management plans for 12-, 18- and 24-month cycles. Review of the fuel management impact of the integral fuel burnable absorber (IFBA), erbium and gadolinium. Calculation of the U 3 O 8 , UF 6 , SWU, fuel fabrication, and burnable absorber requirements for the defined fuel management plans. Estimation of fuel cycle costs of each fuel management plan at spot market and long-term market fuel prices. Estimation of the comparative savings of the different burnable absorbers in dollar equivalent per kgU of fabricated fuel. (author)

  5. TOMS Absorbing Aerosol Index

    Data.gov (United States)

    Washington University St Louis — TOMS_AI_G is an aerosol related dataset derived from the Total Ozone Monitoring Satellite (TOMS) Sensor. The TOMS aerosol index arises from absorbing aerosols such...

  6. Gluon Saturation and EIC

    Energy Technology Data Exchange (ETDEWEB)

    Sichtermann, Ernst

    2016-12-15

    The fundamental structure of nucleons and nuclear matter is described by the properties and dynamics of quarks and gluons in quantum chromodynamics. Electron-nucleon collisions are a powerful method to study this structure. As one increases the energy of the collisions, the interaction process probes regions of progressively higher gluon density. This density must eventually saturate. An high-energy polarized Electron-Ion Collider (EIC) has been proposed to observe and study the saturated gluon density regime. Selected measurements will be discussed, following a brief introduction.

  7. Metal-semiconductor, composite radiation detectors

    International Nuclear Information System (INIS)

    Orvis, W.J.; Yee, J.H.; Fuess, D.A.

    1991-12-01

    In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high- efficiency gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, we have modeled parts of the detector and have nearly completed a prototype device. 2 refs

  8. Metal-semiconductor, composite radiation detectors

    International Nuclear Information System (INIS)

    Orvis, W.J.; Yee, J.H.; Fuess, D.

    1992-12-01

    In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with the good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high-efficiency, room temperature gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, the authors have procured and tested a commercial device with operating characteristics similar to those of a single layer of the composite device. They have modeled the radiation transport in a multi-layered device, to verify the initial calculations of layer thickness and composition. They have modeled the electrostatic field in different device designs to locate and remove high-field regions that can cause device breakdown. They have fabricated 14 single layer prototypes

  9. Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers

    Science.gov (United States)

    Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

    2017-07-01

    We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

  10. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  11. Neutron absorbing article

    International Nuclear Information System (INIS)

    Naum, R.G.; Owens, D.P.; Dooher, G.I.

    1979-01-01

    A neutron absorbing article, in flat plate form and suitable for use in a storage rack for spent fuel, includes boron carbide particles, diluent particles and a solid, irreversibly cured phenolic polymer cured to a continuous matrix binding the boron carbide and diluent particles. The total conent of boron carbide and diluent particles is a major proportion of the article and the content of cured phenolic polymer present is a minor proportion. By regulation of the ratio of boron carbide particles to diluent particles, normally within the range of 1:9 and 9:1 and preferably within the range of 1:5 to 5:1, the neutron absorbing activity of the product may be controlled, which facilitates the manufacture of articles of particular absorbing activities best suitable for specific applications

  12. Burnable neutron absorbers

    International Nuclear Information System (INIS)

    Radford, K.C.; Carlson, W.G.

    1983-01-01

    A neutron-absorber body for use in burnable poison rods in a nuclear reactor. The body is composed of a matrix of Al 2 O 3 containing B 4 C, the neutron absorber. Areas of high density polycrystalline Al 2 O 3 particles are predominantly encircled by pores in some of which there are B 4 C particles. This body is produced by initially spray drying a slurry of A1 2 O 3 powder to which a binder has been added. The powder of agglomerated spheres of the A1 2 O 3 with the binder are dry mixed with B 4 C powder. The mixed powder is formed into a green body by isostatic pressure and the green body is sintered. The sintered body is processed to form the neutron-absorber body. In this case the B 4 C particles are separate from the spheres resulting from the spray drying instead of being embedded in the sphere

  13. Mechanical shock absorber

    International Nuclear Information System (INIS)

    Vrillon, Bernard.

    1973-01-01

    The mechanical shock absorber described is made of a constant thickness plate pierced with circular holes regularly distributed in such a manner that for all the directions along which the strain is applied during the shock, the same section of the substance forming the plate is achieved. The shock absorber is made in a metal standing up to extensive deformation before breaking, selected from a group comprising mild steels and austenitic stainless steels. This apparatus is used for handling pots of fast neutron reactor fuel elements [fr

  14. Neutron absorbing article

    International Nuclear Information System (INIS)

    Naum, R.G.; Owens, D.P.; Dooker, G.I.

    1981-01-01

    A neutron-absorbing article suitable for use in spent fuel racks is described. It comprises boron carbide particles, diluent particles, and a phenolic polymer cured to a continuous matrix. The diluent may be silicon carbide, graphite, amorphous carbon, alumina, or silica. The combined boron carbide-diluent phase contains no more than 2 percent B 2 O 3 , and the neutron-absorbing article contains from 20 to 40 percent phenol resin. The ratio of boron carbide to diluent particles is in the range 1:9 to 9:1

  15. Experimental observation of pulse delay and speed-up in cascaded quantum well gain and absorber media

    DEFF Research Database (Denmark)

    Hansen, Per Lunnemann; Poel, Mike van der; Yvind, Kresten

    2008-01-01

    Slow-down and speed-up of 180 fs pulses in semiconductor waveguides beyond the existing models is obseved. Cascaded gain and absorbing sections is shown to provide significant temporal pulse shifting at near constant output pulse energy.......Slow-down and speed-up of 180 fs pulses in semiconductor waveguides beyond the existing models is obseved. Cascaded gain and absorbing sections is shown to provide significant temporal pulse shifting at near constant output pulse energy....

  16. Ultrafast nonlinear carrier dynamics in doped semiconductors in high THz fields

    DEFF Research Database (Denmark)

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    2011-01-01

    THz frequency saturable absorption and intervalley carrier scattering in n-type semiconductors were observed using intensity-dependent transmission experiments as well as THz-pump—THz probe spectroscopy with ultrabroadband probe pulses.......THz frequency saturable absorption and intervalley carrier scattering in n-type semiconductors were observed using intensity-dependent transmission experiments as well as THz-pump—THz probe spectroscopy with ultrabroadband probe pulses....

  17. Low Absorbance Measurements

    Science.gov (United States)

    Harris, T. D.; Williams, A. M.

    1983-10-01

    The application of low absorption measurements to dilute solute determination requires specific instrumental characteristics. The use of laser intracavity absorption and thermal lens calorimetry to measure concentration is shown. The specific operating parameters that determine sensitivity are delineated along with the limits different measurement strategies impose. Finally areas of improvement in components that would result in improve sensitivity, accuracy, and reliability are discussed. During the past decade, a large number of methods have been developed for measuring the light absorbed by transparent materials. These include measurements on gases, liquids, and solids. The activity has been prompted by a variety of applications and a similar variety of disciplines. In Table 1 some representative examples of these methods is shown along with their published detection limits.1 It is clear that extraordinarily small absorbances can be measured. Most of the methods can be conveniently divided into two groups. These groups are those that measure the transmission of the sample and those that measure the light absorbed by the sample. The light absorbed methods are calorimetric in character. The advantages and disadvantages of each method varies depending on the principal application for which they were developed. The most prevalent motivation has been to characterize the bulk optical properties of transparent materials. Two examples are the development of extremely transparent glasses for use as fiber optic materials and the development of substrates for high power laser operation.

  18. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  19. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  20. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  1. Theory for passive mode-locking in semiconductor laser structures including the effects of self-phase modulation, dispersion and pulse collisions

    NARCIS (Netherlands)

    Koumans, R.G.M.P.; Roijen, van R.

    1996-01-01

    We present a theory for passive mode-locking in semiconductor laser structures using a semiconductor laser amplifier and absorber. The mode-locking system is described in terms of the different elements in the semiconductor laser structure. We derive mode-locking conditions and show how other

  2. Adjustable Shock Absorbers

    OpenAIRE

    Adamiec, Radek

    2012-01-01

    Bakalářská práce obsahuje přehled používaných tlumičů osobních automobilů, závodních automobilů a motocyklů. Jsou zde popsány systémy t lumením, konstrukce tlumičů a vidlic používaných u motocyklů. Dále je zde přehled prvků používaných u podvozků automobilů. This bachelor´s thesis contains the survey of the shock absorbers of passenger cars, racing cars and motorcycles. Are described damping systems, the design used shock absorbers and forks for motorcycles. Then there is the list of the e...

  3. Kinetic energy absorbing pad

    International Nuclear Information System (INIS)

    Bricmont, R.J.; Hamilton, P.A.; Ming Long Ting, R.

    1981-01-01

    Reactors, fuel processing plants etc incorporate pipes and conduits for fluids under high pressure. Fractures, particularly adjacent to conduit elbows, produce a jet of liquid which whips the broken conduit at an extremely high velocity. An enormous impact load would be applied to any stationary object in the conduit's path. The design of cellular, corrugated metal impact pads to absorb the kinetic energy of the high velocity conduits is given. (U.K.)

  4. Absorbable and biodegradable polymers

    CERN Document Server

    Shalaby, Shalaby W

    2003-01-01

    INTRODUCTION NOTES: Absorbable/Biodegradable Polymers: Technology Evolution. DEVELOPMENT AND APPLICATIONOF NEW SYSTEMS: Segmented Copolyesters with Prolonged Strength Retention Profiles. Polyaxial Crystalline Fiber-Forming Copolyester. Polyethylene Glycol-Based Copolyesters. Cyanoacrylate-Based Systems as Tissue Adhesives. Chitosan-Based Systems. Hyaluronic Acid-Based Systems. DEVELOPMENTS IN PREPARATIVE, PROCESSING, AND EVALUATION METHODS: New Approaches to the Synthesis of Crystalline. Fiber-Forming Aliphatic Copolyesters. Advances in Morphological Development to Tailor the Performance of Me

  5. Burnable neutron absorbers

    International Nuclear Information System (INIS)

    Radford, K.C.; Carlson, W.G.

    1985-01-01

    This patent deals with the fabrication of pellets for neutron absorber rods. Such a pellet includes a matrix of a refractory material which may be aluminum or zirconium oxide, and a burnable poison distributed throughout the matrix. The neutron absorber material may consist of one or more elements or compounds of the metals boron, gadolinium, samarium, cadmium, europium, hafnium, dysprosium and indium. The method of fabricating pellets of these materials outlined in this patent is designed to produce pores or voids in the pellets that can be used to take up the expansion of the burnable poison and to absorb the helium gas generated. In the practice of this invention a slurry of Al 2 O 3 is produced. A hard binder is added and the slurry and binder are spray dried. This powder is mixed with dry B 4 C powder, forming a homogeneous mixture. This mixture is pressed into green tubes which are then sintered. During sintering the binder volatilizes leaving a ceramic with nearly spherical high-density regions of

  6. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  7. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  8. Exciton absorption of entangled photons in semiconductor quantum wells

    Science.gov (United States)

    Rodriguez, Ferney; Guzman, David; Salazar, Luis; Quiroga, Luis; Condensed Matter Physics Group Team

    2013-03-01

    The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers. Research funds from Facultad de Ciencias, Universidad de los Andes

  9. Saturated Zone Colloid Transport

    International Nuclear Information System (INIS)

    H. S. Viswanathan

    2004-01-01

    This scientific analysis provides retardation factors for colloids transporting in the saturated zone (SZ) and the unsaturated zone (UZ). These retardation factors represent the reversible chemical and physical filtration of colloids in the SZ. The value of the colloid retardation factor, R col is dependent on several factors, such as colloid size, colloid type, and geochemical conditions (e.g., pH, Eh, and ionic strength). These factors are folded into the distributions of R col that have been developed from field and experimental data collected under varying geochemical conditions with different colloid types and sizes. Attachment rate constants, k att , and detachment rate constants, k det , of colloids to the fracture surface have been measured for the fractured volcanics, and separate R col uncertainty distributions have been developed for attachment and detachment to clastic material and mineral grains in the alluvium. Radionuclides such as plutonium and americium sorb mostly (90 to 99 percent) irreversibly to colloids (BSC 2004 [DIRS 170025], Section 6.3.3.2). The colloid retardation factors developed in this analysis are needed to simulate the transport of radionuclides that are irreversibly sorbed onto colloids; this transport is discussed in the model report ''Site-Scale Saturated Zone Transport'' (BSC 2004 [DIRS 170036]). Although it is not exclusive to any particular radionuclide release scenario, this scientific analysis especially addresses those scenarios pertaining to evidence from waste-degradation experiments, which indicate that plutonium and americium may be irreversibly attached to colloids for the time scales of interest. A section of this report will also discuss the validity of using microspheres as analogs to colloids in some of the lab and field experiments used to obtain the colloid retardation factors. In addition, a small fraction of colloids travels with the groundwater without any significant retardation. Radionuclides irreversibly

  10. Shock absorber in Ignalina NPP

    International Nuclear Information System (INIS)

    Bulavas, A.; Muralis, J.

    1996-09-01

    Theoretical calculation and experimental analysis of models of shock absorber in Ignalina NPP is presented. The results obtained from the investigation with model of shock absorber coincide with the theoretical calculation. (author). 2 figs., 3 refs

  11. Absorber for terahertz radiation management

    Science.gov (United States)

    Biallas, George Herman; Apeldoorn, Cornelis; Williams, Gwyn P.; Benson, Stephen V.; Shinn, Michelle D.; Heckman, John D.

    2015-12-08

    A method and apparatus for minimizing the degradation of power in a free electron laser (FEL) generating terahertz (THz) radiation. The method includes inserting an absorber ring in the FEL beam path for absorbing any irregular THz radiation and thus minimizes the degradation of downstream optics and the resulting degradation of the FEL output power. The absorber ring includes an upstream side, a downstream side, and a plurality of wedges spaced radially around the absorber ring. The wedges form a scallop-like feature on the innermost edges of the absorber ring that acts as an apodizer, stopping diffractive focusing of the THz radiation that is not intercepted by the absorber. Spacing between the scallop-like features and the shape of the features approximates the Bartlett apodization function. The absorber ring provides a smooth intensity distribution, rather than one that is peaked on-center, thereby eliminating minor distortion downstream of the absorber.

  12. Corrosion resistant neutron absorbing coatings

    Science.gov (United States)

    Choi, Jor-Shan [El Cerrito, CA; Farmer, Joseph C [Tracy, CA; Lee, Chuck K [Hayward, CA; Walker, Jeffrey [Gaithersburg, MD; Russell, Paige [Las Vegas, NV; Kirkwood, Jon [Saint Leonard, MD; Yang, Nancy [Lafayette, CA; Champagne, Victor [Oxford, PA

    2012-05-29

    A method of forming a corrosion resistant neutron absorbing coating comprising the steps of spray or deposition or sputtering or welding processing to form a composite material made of a spray or deposition or sputtering or welding material, and a neutron absorbing material. Also a corrosion resistant neutron absorbing coating comprising a composite material made of a spray or deposition or sputtering or welding material, and a neutron absorbing material.

  13. Feynman Integrals with Absorbing Boundaries

    OpenAIRE

    Marchewka, A.; Schuss, Z.

    1997-01-01

    We propose a formulation of an absorbing boundary for a quantum particle. The formulation is based on a Feynman-type integral over trajectories that are confined to the non-absorbing region. Trajectories that reach the absorbing wall are discounted from the population of the surviving trajectories with a certain weighting factor. Under the assumption that absorbed trajectories do not interfere with the surviving trajectories, we obtain a time dependent absorption law. Two examples are worked ...

  14. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  15. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  16. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  17. Solar radiation absorbing material

    Science.gov (United States)

    Googin, John M.; Schmitt, Charles R.; Schreyer, James M.; Whitehead, Harlan D.

    1977-01-01

    Solar energy absorbing means in solar collectors are provided by a solar selective carbon surface. A solar selective carbon surface is a microporous carbon surface having pores within the range of 0.2 to 2 micrometers. Such a surface is provided in a microporous carbon article by controlling the pore size. A thermally conductive substrate is provided with a solar selective surface by adhering an array of carbon particles in a suitable binder to the substrate, a majority of said particles having diameters within the range of about 0.2-10 microns.

  18. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  19. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  20. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  1. Saturated Zone Colloid Transport

    Energy Technology Data Exchange (ETDEWEB)

    H. S. Viswanathan

    2004-10-07

    This scientific analysis provides retardation factors for colloids transporting in the saturated zone (SZ) and the unsaturated zone (UZ). These retardation factors represent the reversible chemical and physical filtration of colloids in the SZ. The value of the colloid retardation factor, R{sub col} is dependent on several factors, such as colloid size, colloid type, and geochemical conditions (e.g., pH, Eh, and ionic strength). These factors are folded into the distributions of R{sub col} that have been developed from field and experimental data collected under varying geochemical conditions with different colloid types and sizes. Attachment rate constants, k{sub att}, and detachment rate constants, k{sub det}, of colloids to the fracture surface have been measured for the fractured volcanics, and separate R{sub col} uncertainty distributions have been developed for attachment and detachment to clastic material and mineral grains in the alluvium. Radionuclides such as plutonium and americium sorb mostly (90 to 99 percent) irreversibly to colloids (BSC 2004 [DIRS 170025], Section 6.3.3.2). The colloid retardation factors developed in this analysis are needed to simulate the transport of radionuclides that are irreversibly sorbed onto colloids; this transport is discussed in the model report ''Site-Scale Saturated Zone Transport'' (BSC 2004 [DIRS 170036]). Although it is not exclusive to any particular radionuclide release scenario, this scientific analysis especially addresses those scenarios pertaining to evidence from waste-degradation experiments, which indicate that plutonium and americium may be irreversibly attached to colloids for the time scales of interest. A section of this report will also discuss the validity of using microspheres as analogs to colloids in some of the lab and field experiments used to obtain the colloid retardation factors. In addition, a small fraction of colloids travels with the groundwater without any significant

  2. Semiconductor optoelectronic infrared spectroscopy

    International Nuclear Information System (INIS)

    Hollingworth, A.R.

    2001-08-01

    We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

  3. nitrogen saturation in stream ecosystems

    OpenAIRE

    Earl, S. R.; Valett, H. M.; Webster, J. R.

    2006-01-01

    The concept of nitrogen (N) saturation has organized the assessment of N loading in terrestrial ecosystems. Here we extend the concept to lotic ecosystems by coupling Michaelis-Menten kinetics and nutrient spiraling. We propose a series of saturation response types, which may be used to characterize the proximity of streams to N saturation. We conducted a series of short-term N releases using a tracer ((NO3)-N-15-N) to measure uptake. Experiments were conducted in streams spanning a gradient ...

  4. Metamaterial electromagnetic wave absorbers.

    Science.gov (United States)

    Watts, Claire M; Liu, Xianliang; Padilla, Willie J

    2012-06-19

    The advent of negative index materials has spawned extensive research into metamaterials over the past decade. Metamaterials are attractive not only for their exotic electromagnetic properties, but also their promise for applications. A particular branch-the metamaterial perfect absorber (MPA)-has garnered interest due to the fact that it can achieve unity absorptivity of electromagnetic waves. Since its first experimental demonstration in 2008, the MPA has progressed significantly with designs shown across the electromagnetic spectrum, from microwave to optical. In this Progress Report we give an overview of the field and discuss a selection of examples and related applications. The ability of the MPA to exhibit extreme performance flexibility will be discussed and the theory underlying their operation and limitations will be established. Insight is given into what we can expect from this rapidly expanding field and future challenges will be addressed. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Heterogeneous neutron absorbers development

    International Nuclear Information System (INIS)

    Boccaccini, Aldo; Agueda, Horacio; Russo, Diego; Perez, Edmundo

    1987-01-01

    The use of solid burnable absorber materials in power light water reactors has increased in the last years, specially due to improvements attained in costs of generated electricity. The present work summarizes the basic studies made on an alumina-gadolinia system, where alumina is the inert matrix and gadolinia acts as burnable poison, and describes the fabrication method of pellets with that material. High density compacts were obtained in the range of concentrations used by cold pressing and sintering at 1600 deg C in inert (Ar) atmosphere. Finally, the results of the irradiation experiences made at RA-6 reactor, located at the Bariloche Atomic Center, are given where variations on negative reactivity caused by introduction of burnable poison rods were measured. The results obtained from these experiences are in good agreement with those coming from calculation codes. (Author)

  6. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  7. Introduction to Semiconductor Devices

    Science.gov (United States)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  8. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  9. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  10. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  11. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  12. MCNPX calculations for electron irradiated semiconductor detectors

    International Nuclear Information System (INIS)

    Sedlackova, K.; Necas, V.; Sagatova, A.; Zatko, B.

    2014-01-01

    This study aimed to treat some practical problems of (not only) semiconductor material irradiation by high energy electron beam using MCNPX simulation code. The relation between the absorbed dose and the fluency was found and the energy distribution of electron flux density was simulated on the top and back side of 270 μm thick GaAs, SiC and Si detectors. Furthermore, the dose depth profiles were calculated for GaAs, SiC and Si materials irradiated by 4 and 5 MeV electron beams. For the GaAs detector, a very good agreement with the experiment was shown. To match the absolute values of the absorbed dose with experimentally obtained values, the electron source emissivity has to be determined in relation to the electron beam setting parameters. (authors)

  13. Saturation and linear transport equation

    International Nuclear Information System (INIS)

    Kutak, K.

    2009-03-01

    We show that the GBW saturation model provides an exact solution to the one dimensional linear transport equation. We also show that it is motivated by the BK equation considered in the saturated regime when the diffusion and the splitting term in the diffusive approximation are balanced by the nonlinear term. (orig.)

  14. Misconceptions in Reporting Oxygen Saturation

    NARCIS (Netherlands)

    Toffaletti, John; Zijlstra, Willem G.

    2007-01-01

    BACKGROUND: We describe some misconceptions that have become common practice in reporting blood gas and cooximetry results. In 1980, oxygen saturation was incorrectly redefined in a report of a new instrument for analysis of hemoglobin (Hb) derivatives. Oxygen saturation (sO(2)) was redefined as the

  15. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  16. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  17. Reflection measurements of microwave absorbers

    Science.gov (United States)

    Baker, Dirk E.; van der Neut, Cornelis A.

    1988-12-01

    A swept-frequency interferometer is described for making rapid, real-time assessments of localized inhomogeneities in planar microwave absorber panels. An aperture-matched exponential horn is used to reduce residual reflections in the system to about -37 dB. This residual reflection is adequate for making comparative measurements on planar absorber panels whose reflectivities usually fall in the -15 to -25 dB range. Reflectivity measurements on a variety of planar absorber panels show that multilayer Jaumann absorbers have the greatest inhomogeneity, while honeycomb absorbers generally have excellent homogeneity within a sheet and from sheet to sheet. The test setup is also used to measure the center frequencies of resonant absorbers. With directional couplers and aperture-matched exponential horns, the technique can be easily applied in the standard 2 to 40 GHz waveguide bands.

  18. Aperiodic-metamaterial-based absorber

    Directory of Open Access Journals (Sweden)

    Quanlong Yang

    2017-09-01

    Full Text Available The periodic-metamaterial-based perfect absorber has been studied broadly. Conversely, if the unit cell in the metamaterial-based absorber is arranged aperiodically (aperiodic-metamaterial-based absorber, how does it perform? Inspired by this, here we present a systematic study of the aperiodic-metamaterial-based absorber. By investigating the response of metamaterial absorbers based on periodic, Fibonacci, Thue-Morse, and quasicrystal lattices, we found that aperiodic-metamaterial-based absorbers could display similar absorption behaviors as the periodic one in one hand. However, their absorption behaviors show different tendency depending on the thicknesses of the spacer. Further studies on the angle and polarization dependence of the absorption behavior are also presented.

  19. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  20. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  1. Photoinduced electron transfer from organic semiconductors onto redox mediators for CO2

    International Nuclear Information System (INIS)

    Portenkirchner, E.

    2014-01-01

    In this work the photoinduced electron transfer from organic semiconductors onto redox mediator catalysts for CO 2 reduction has been investigated. In the beginning, the work focuses on the identication, characterization and test of suitable catalyst materials. For this purpose, rhenium compounds with 2,2'-bipyridine bis(arylimino) acenaphthene ligands and pyridinium were tested for molecular homogenous catalysis. Infrared, ultraviolet-visible (UV-Vis) and nuclear magnetic resonance (NMR) spectroscopy were used for initial characterization of the catalyst substances. Since the interpretation of infrared spectra was difficult for large molecules based on measured data only, additionally infrared absorption spectra obtained by quantum mechanical density functional theory(DFT) calculations were successfully used to correlate characteristic features in the measured spectra to their molecular origin. It was found that experimentally observed data and quantum chemical predictions for the infrared spectra of the novel compounds are in good agreement. Additionally, quantum mechanical calculations were carried out for the determination of molecular orbital frontier energy levels and correlated to UV-Vis absorption and cyclic voltammetry measurements. Extensive cyclic voltammetry measurements and bulk controlled-potential electrolysis experiments were performed using a N 2 - and CO 2 -saturated electrolyte solution. Together with a detailed product analysis via infrared spectroscopy, gas and ion chromatography the results allowed electrochemical characterizations of the novel catalysts regarding their suitability for electrochemical CO 2 reduction. Once suitable catalysts were identied, the materials were immobilized on the electrode surface by electro-polymerization of the catalyst (5,5'bisphenylethynyl-2,2'-bipyridyl)Re(CO) 3 Cl itself or by incorporation of (2,2'-bipyridyl)Re(CO) 3 Cl into a polypyrrole matrix, thereby changing from homogeneous to

  2. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  3. Transport in coherently absorbing or amplifying media

    International Nuclear Information System (INIS)

    Sen, A.K.

    1995-11-01

    We study electronic transport in a one-dimensional ordered chain in the presence of either absorption or amplification at each site (the site-potential having an imaginary positive or negative part) within a single-band tightbinding Hamiltonian. The spectrum in either case for the isolated (closed) quantum system is found to become broader compared to the regular Bloch case where there is no absorption or amplification at any site. Interestingly for the transport through an infinitely long ordered chain (open quantum system), the reflectance saturates to a value greater (lesser) than unity in the amplifying (absorbing) case and the transmittance decays to zero in either case. This fact implies that the transmittance does not grow indefinitely even for an ordered, amplifying (active or lasing) medium and that it is not necessary to have any disorder or interaction induced confining mechanism on the transmitted wave, so as to achieve an amplification in the backscattered wave. (author). 8 refs, 2 figs

  4. Neutron absorbing element

    International Nuclear Information System (INIS)

    Kasai, Shigeo.

    1991-01-01

    The present invention concerns a neutron absorbing element of a neutron shielding member used for an LMFBR type reactor. The inside of a fuel can sealed at both of the upper and the lower ends thereof with plugs is partitioned into an upper and a lower chambers by an intermediate plug. A discharging hole is disposed at the upper end plug, which is in communication with the outside. A communication tube is disposed at the intermediate end plug and it is in communication with the lower chamber containing B 4 C pellets. A cylindrical support member having three porous plugs connected in series is disposed at the lower surface of the discharging hole provided at the upper end plug. Further, the end of the discharging hole is sealed with high temperature solder and He atmosphere is present at the inside of the fuel can. With such a constitution, the supporting differential pressure of the porous plugs can be made greater while discharging He gases generated from B 4 C to the outside. Further, the porous plugs can be surely wetted by coolants. Accordingly, it is possible to increase life time and shorten the size. (I.N.)

  5. A theory of coherent propagation of light wave in semiconductors

    International Nuclear Information System (INIS)

    Zi-zhao, G.; Guo-zhen, Y.

    1980-05-01

    In this paper, we suggest a theory to describe the pheonmena of coherent propagation of light wave in semiconductors. Basing on two band system and considering the interband and intraband transitions induced by light wave and the interaction between electrons, we obtain the nonlinear equations for the description of interaction between carriers and coherent light wave. We have made use of the equations to analyse the phenomena which arise from the interaction between semiconductors and coherent light, for example, the multiphoton transitions, the saturation of light absorption of exciton, the shift of exciton line in intense light field, and the coherent propagation phenomena such as self-induced transparency, etc. (author)

  6. Burnable absorber coated nuclear fuel

    International Nuclear Information System (INIS)

    Chubb, W.; Radford, K.C.; Parks, B.H.

    1984-01-01

    A nuclear fuel body which is at least partially covered by a burnable neutron absorber layer is provided with a hydrophobic overcoat generally covering the burnable absorber layer and bonded directly to it. In a method for providing a UO 2 fuel pellet with a zirconium diboride burnable poison layer, the fuel body is provided with an intermediate niobium layer. (author)

  7. Leaf absorbance and photosynthesis

    Science.gov (United States)

    Schurer, Kees

    1994-01-01

    The absorption spectrum of a leaf is often thought to contain some clues to the photosynthetic action spectrum of chlorophyll. Of course, absorption of photons is needed for photosynthesis, but the reverse, photosynthesis when there is absorption, is not necessarily true. As a check on the existence of absorption limits we measured spectra for a few different leaves. Two techniques for measuring absorption have been used, viz. the separate determination of the diffuse reflectance and the diffuse transmittance with the leaf at a port of an integrating sphere and the direct determination of the non-absorbed fraction with the leaf in the sphere. In a cross-check both methods yielded the same results for the absorption spectrum. The spectrum of a Fuchsia leaf, covering the short-wave region from 350 to 2500 nm, shows a high absorption in UV, blue and red, the well known dip in the green and a steep fall-off at 700 nm. Absorption drops to virtually zero in the near infrared, with subsequent absorptions, corresponding to the water absorption bands. In more detailed spectra, taken at 5 nm intervals with a 5 nm bandwidth, differences in chlorophyll content show in the different depths of the dip around 550 nm and in a small shift of the absorption edge at 700 nm. Spectra for Geranium (Pelargonium zonale) and Hibiscus (with a higher chlorophyll content) show that the upper limit for photosynthesis can not be much above 700 nm. No evidence, however, is to be seen of a lower limit for photosynthesis and, in fact, some experiments down to 300 nm still did not show a decrease of the absorption although it is well recognized that no photosynthesis results with 300 nm wavelengths.

  8. Visible light broadband perfect absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Jia, X. L.; Meng, Q. X.; Yuan, C. X.; Zhou, Z. X.; Wang, X. O., E-mail: wxo@hit.edu.cn [School of Science, Harbin Institute of Technology, Harbin 150001 (China)

    2016-03-15

    The visible light broadband perfect absorbers based on the silver (Ag) nano elliptical disks and holes array are studied using finite difference time domain simulations. The semiconducting indium silicon dioxide thin film is introduced as the space layer in this sandwiched structure. Utilizing the asymmetrical geometry of the structures, polarization sensitivity for transverse electric wave (TE)/transverse magnetic wave (TM) and left circular polarization wave (LCP)/right circular polarization wave (RCP) of the broadband absorption are gained. The absorbers with Ag nano disks and holes array show several peaks absorbance of 100% by numerical simulation. These simple and flexible perfect absorbers are particularly desirable for various potential applications including the solar energy absorber.

  9. Landsliding in partially saturated materials

    Science.gov (United States)

    Godt, J.W.; Baum, R.L.; Lu, N.

    2009-01-01

    [1] Rainfall-induced landslides are pervasive in hillslope environments around the world and among the most costly and deadly natural hazards. However, capturing their occurrence with scientific instrumentation in a natural setting is extremely rare. The prevailing thinking on landslide initiation, particularly for those landslides that occur under intense precipitation, is that the failure surface is saturated and has positive pore-water pressures acting on it. Most analytic methods used for landslide hazard assessment are based on the above perception and assume that the failure surface is located beneath a water table. By monitoring the pore water and soil suction response to rainfall, we observed shallow landslide occurrence under partially saturated conditions for the first time in a natural setting. We show that the partially saturated shallow landslide at this site is predictable using measured soil suction and water content and a novel unified effective stress concept for partially saturated earth materials. Copyright 2009 by the American Geophysical Union.

  10. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  11. Electrical addressing and temporal tweezing of localized pulses in passively mode-locked semiconductor lasers

    Science.gov (United States)

    Javaloyes, J.; Camelin, P.; Marconi, M.; Giudici, M.

    2017-08-01

    This work presents an overview of a combined experimental and theoretical analysis on the manipulation of temporal localized structures (LSs) found in passively Vertical-Cavity Surface-Emitting Lasers coupled to resonant saturable absorber mirrors. We show that the pumping current is a convenient parameter for manipulating the temporal Localized Structures, also called localized pulses. While short electrical pulses can be used for writing and erasing individual LSs, we demonstrate that a current modulation introduces a temporally evolving parameter landscape allowing to control the position and the dynamics of LSs. We show that the localized pulses drifting speed in this landscape depends almost exclusively on the local parameter value instead of depending on the landscape gradient, as shown in quasi-instantaneous media. This experimental observation is theoretically explained by the causal response time of the semiconductor carriers that occurs on an finite timescale and breaks the parity invariance along the cavity, thus leading to a new paradigm for temporal tweezing of localized pulses. Different modulation waveforms are applied for describing exhaustively this paradigm. Starting from a generic model of passive mode-locking based upon delay differential equations, we deduce the effective equations of motion for these LSs in a time-dependent current landscape.

  12. Dynamics of InGaN tandem blue-violet semiconductor lasers

    International Nuclear Information System (INIS)

    Antohi, I.; Rusu, S.S.; Tronciu, V.Z.

    2013-01-01

    Full text: Blue-violet semiconductor lasers have received much attention because of their promise for high-density optical storage applications. In particular, blue-violet laser diodes operating at 400 nm are required for BD- systems and for use in medicine, biology, color printers and monitors, etc, In recent years, numerous fabrication methods have been proposed and developed for blue lasers with CW and self-pulsating operations and the lifetime of such lasers has been increased to over 15000 h. Recently, we have reported self-pulsation and excitable behaviour for an InGaN laser with a p-type saturable absorber, and SP in the frequency range from 1.6 to 2.9 GHz has been achieved with such lasers. In this paper, we present an investigation of the dynamics of tandem 400 nm blue-violet lasers with setup presented in Fig.1a. A particular feature of the devices is the connection of the contacts of the SA, to reduce the carrier lifetime in the SA with the intention of producing self-pulsation and excitability. We examine the laser dynamics in terms of bifurcation diagrams. A typical calculation of bifurcation for the periodic solution is shown in Fig. 1b. This figure shows the dependence of the peak of the photon number on the injected.

  13. Dynamics of temporally localized states in passively mode-locked semiconductor lasers

    Science.gov (United States)

    Schelte, C.; Javaloyes, J.; Gurevich, S. V.

    2018-05-01

    We study the emergence and the stability of temporally localized structures in the output of a semiconductor laser passively mode locked by a saturable absorber in the long-cavity regime. For large yet realistic values of the linewidth enhancement factor, we disclose the existence of secondary dynamical instabilities where the pulses develop regular and subsequent irregular temporal oscillations. By a detailed bifurcation analysis we show that additional solution branches that consist of multipulse (molecules) solutions exist. We demonstrate that the various solution curves for the single and multipeak pulses can splice and intersect each other via transcritical bifurcations, leading to a complex web of solutions. Our analysis is based on a generic model of mode locking that consists of a time-delayed dynamical system, but also on a much more numerically efficient, yet approximate, partial differential equation. We compare the results of the bifurcation analysis of both models in order to assess up to which point the two approaches are equivalent. We conclude our analysis by the study of the influence of group velocity dispersion, which is only possible in the framework of the partial differential equation model, and we show that it may have a profound impact on the dynamics of the localized states.

  14. Absorbing rods for nuclear fast neutron reactor absorbing assembly

    International Nuclear Information System (INIS)

    Aji, M.; Ballagny, A.; Haze, R.

    1986-01-01

    The invention proposes a neutron absorber rod for neutron absorber assembly of a fast neutron reactor. The assembly comprises a bundle of vertical rods, each one comprising a stack of pellets made of a neutron absorber material contained in a long metallic casing with a certain radial play with regard to this casing; this casing includes traps for splinters from the pellets which may appear during reactor operation, at the level of contact between adjacent pellets. The present invention prevents the casing from rupture involved by the disintegration of the pellets producing pieces of boron carbide of high hardness [fr

  15. Nitrogen saturation in stream ecosystems.

    Science.gov (United States)

    Earl, Stevan R; Valett, H Maurice; Webster, Jackson R

    2006-12-01

    The concept of nitrogen (N) saturation has organized the assessment of N loading in terrestrial ecosystems. Here we extend the concept to lotic ecosystems by coupling Michaelis-Menten kinetics and nutrient spiraling. We propose a series of saturation response types, which may be used to characterize the proximity of streams to N saturation. We conducted a series of short-term N releases using a tracer (15NO3-N) to measure uptake. Experiments were conducted in streams spanning a gradient of background N concentration. Uptake increased in four of six streams as NO3-N was incrementally elevated, indicating that these streams were not saturated. Uptake generally corresponded to Michaelis-Menten kinetics but deviated from the model in two streams where some other growth-critical factor may have been limiting. Proximity to saturation was correlated to background N concentration but was better predicted by the ratio of dissolved inorganic N (DIN) to soluble reactive phosphorus (SRP), suggesting phosphorus limitation in several high-N streams. Uptake velocity, a reflection of uptake efficiency, declined nonlinearly with increasing N amendment in all streams. At the same time, uptake velocity was highest in the low-N streams. Our conceptual model of N transport, uptake, and uptake efficiency suggests that, while streams may be active sites of N uptake on the landscape, N saturation contributes to nonlinear changes in stream N dynamics that correspond to decreased uptake efficiency.

  16. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  17. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  18. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  19. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  20. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  1. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  2. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  3. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  4. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  5. Architectures for Improved Organic Semiconductor Devices

    Science.gov (United States)

    Beck, Jonathan H.

    Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes

  6. Attractive electron correlation in wide band gap semiconductors by electron-photon interaction

    International Nuclear Information System (INIS)

    Takeda, Hiroyuki; Yoshino, Katsumi

    2004-01-01

    We theoretically demonstrate attractive electron correlation in wide band gap semiconductors by electron-photon interaction. At low temperature, wavevectors of electromagnetic waves absorbed in wide band gap semiconductors cannot be neglected for wavevectors of electron waves; that is, electromagnetic waves affect the movements of electrons. In particular, attractive interaction occurs between two electrons when one electron changes from a valence band to a conduction band and the other electron changes from a conduction band to a valence band

  7. Neutron absorbed dose in a pacemaker CMOS

    Energy Technology Data Exchange (ETDEWEB)

    Borja H, C. G.; Guzman G, K. A.; Valero L, C. Y.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2011-11-15

    The absorbed dose due to neutrons by a Complementary Metal Oxide Semiconductor (CMOS) has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes a patient that must be treated by radiotherapy with a linear accelerator; the pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. When the Linac is working in Bremsstrahlung mode an undesirable neutron field is produced due to photoneutron reactions; these neutrons could damage the CMOS putting the patient at risk during the radiotherapy treatment. In order to estimate the neutron dose in the CMOS a Monte Carlo calculation was carried out where a full radiotherapy vault room was modeled with a W-made spherical shell in whose center was located the source term of photoneutrons produced by a Linac head operating in Bremsstrahlung mode at 18 MV. In the calculations a phantom made of tissue equivalent was modeled while a beam of photoneutrons was applied on the phantom prostatic region using a field of 10 x 10 cm{sup 2}. During simulation neutrons were isotropically transported from the Linac head to the phantom chest, here a 1 {theta} x 1 cm{sup 2} cylinder made of polystyrene was modeled as the CMOS, where the neutron spectrum and the absorbed dose were estimated. Main damages to CMOS are by protons produced during neutron collisions protective cover made of H-rich materials, here the neutron spectrum that reach the CMOS was calculated showing a small peak around 0.1 MeV and a larger peak in the thermal region, both connected through epithermal neutrons. (Author)

  8. Photoelectron antibunching and absorber theory

    International Nuclear Information System (INIS)

    Pegg, D.T.

    1980-01-01

    The recently detected photoelectron antibunching effect is considered to be evidence for the quantised electromagnetic field, i.e. for the existence of photons. Direct-action quantum absorber theory, on the other hand, has been developed on the basis that the quantised field is illusory, with quantisation being required only for atoms. In this paper it is shown that photoelectron antibunching is readily explicable in terms of absorber theory and in fact is directly attributable to the quantum nature of the emitting and detecting atoms alone. The physical nature of the reduction of the wavepacket associated with the detection process is briefly discussed in terms of absorber theory. (author)

  9. Liquid metal reactor absorber technology

    International Nuclear Information System (INIS)

    Pitner, A.L.

    1990-10-01

    The selection of boron carbide as the reference liquid metal reactor absorber material is supported by results presented for irradiation performance, reactivity worth compatibility, and benign failure consequences. Scram response requirements are met easily with current control rod configurations. The trend in absorber design development is toward larger sized pins with fewer pins per bundle, providing economic savings and improved hydraulic characteristics. Very long-life absorber designs appear to be attainable with the application of vented pin and sodium-bonded concepts. 3 refs., 3 figs

  10. Tunable radiation emitting semiconductor device

    NARCIS (Netherlands)

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  11. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  12. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  13. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  14. Key techniques for space-based solar pumped semiconductor lasers

    Science.gov (United States)

    He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

    2014-12-01

    In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

  15. Depletion field focusing in semiconductors

    NARCIS (Netherlands)

    Prins, M.W.J.; Gelder, Van A.P.

    1996-01-01

    We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

  16. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  17. Semi-conductor rectifiers

    International Nuclear Information System (INIS)

    1981-01-01

    A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

  18. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  19. Absorber materials in CANDU PHWR's

    International Nuclear Information System (INIS)

    Price, E.G.; Boss, C.R.; Novak, W.Z.; Fong, R.W.L.

    1995-03-01

    In a CANDU reactor the fuel channels are arranged on a square lattice in a calandria filled with heavy water moderator. This arrangement allows five types of tubular neutron absorber devices to be located in a relatively benign environment of low pressure, low temperature heavy water between neighbouring rows of columns of fuel channels. This paper will describe the roles of the devices and outline the design requirements of the absorber component from a reactor physics viewpoint. Nuclear heating and activation problems associated with the different absorbers will be briefly discussed. The design and manufacture of the devices will be also discussed. The control rod absorbers and shut off materials are cadmium and stainless steel. In the tubular arrangement, the cadmium is sandwiched between stainless steel tubes. This type of device has functioned well, but there is now concern over the availability and expense of cadmium which is used in two types of CANDU control devices. There are also concerns about the toxicity of cadmium during the fabrication of the absorbers. These concerns are prompting AECL to study alternatives. To minimize design changes, pure boron-10 alloyed in stainless steel is a favoured option. Work is underway to confirm the suitability of the boron-loaded steel and identify other encapsulated absorber materials for practical application. Because the reactivity devices or their guide tubes span the calandria vessel, the long slender components must be sufficiently rigid to resist operational vibration and also be seismically stable. Some of these components are made of Zircaloy to minimize neutron absorption. Slow irradiation growth and creep can reduce the spring tension, and periodic adjustments to the springs are required. Experience with the control absorber devices has generally been good. In one instance liquid zone controllers had a problem of vibration induced fretting but a designed back-fit resolved the problem. (author). 3 refs., 1

  20. A highly efficient graphene oxide absorber for Q-switched Nd:GdVO4 lasers

    International Nuclear Information System (INIS)

    Wang Yonggang; Wen Xiaoming; Tang Jau; Chen, Hou Ren; Hsieh, Wen Feng

    2011-01-01

    We demonstrated that graphene oxide material could be used as a highly efficient saturable absorber for the Q-switched Nd:GdVO 4 laser. A novel and low-cost graphene oxide (GO) absorber was fabricated by a vertical evaporation technique and high viscosity of polyvinyl alcohol (PVA) aqueous solution. A piece of GO/PVA absorber, a piece of round quartz, and an output coupler mirror were combined to be a sandwich structure passive component. Using such a structure, 104 ns pulses and 1.22 W average output power were obtained with the maximum pulse energy at 2 µJ and a slope efficiency of 17%.

  1. Selective saturation method for EPR dosimetry with tooth enamel

    International Nuclear Information System (INIS)

    Ignatiev, E.A.; Romanyukha, A.A.; Koshta, A.A.; Wieser, A.

    1996-01-01

    The method of selective saturation is based on the difference in the microwave (mw) power dependence of the background and radiation induced EPR components of the tooth enamel spectrum. The subtraction of the EPR spectrum recorded at low mw power from that recorded at higher mw power provides a considerable reduction of the background component in the spectrum. The resolution of the EPR spectrum could be improved 10-fold, however simultaneously the signal-to-noise ratio was found to be reduced twice. A detailed comparative study of reference samples with known absorbed doses was performed to demonstrate the advantage of the method. The application of the selective saturation method for EPR dosimetry with tooth enamel reduced the lower limit of EPR dosimetry to about 100 mGy. (author)

  2. Additive manufacturing of RF absorbers

    Science.gov (United States)

    Mills, Matthew S.

    The ability of additive manufacturing techniques to fabricate integrated electromagnetic absorbers tuned for specific radio frequency bands within structural composites allows for unique combinations of mechanical and electromagnetic properties. These composites and films can be used for RF shielding of sensitive electromagnetic components through in-plane and out-of-plane RF absorption. Structural composites are a common building block of many commercial platforms. These platforms may be placed in situations in which there is a need for embedded RF absorbing properties along with structural properties. Instead of adding radar absorbing treatments to the external surface of existing structures, which adds increased size, weight and cost; it could prove to be advantageous to integrate the microwave absorbing properties directly into the composite during the fabrication process. In this thesis, a method based on additive manufacturing techniques of composites structures with prescribed electromagnetic loss, within the frequency range 1 to 26GHz, is presented. This method utilizes screen printing and nScrypt micro dispensing to pattern a carbon based ink onto low loss substrates. The materials chosen for this study will be presented, and the fabrication technique that these materials went through to create RF absorbing structures will be described. The calibration methods used, the modeling of the RF structures, and the applications in which this technology can be utilized will also be presented.

  3. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  4. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  5. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  6. Three dimensional strained semiconductors

    Science.gov (United States)

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  7. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  8. Optically coupled semiconductor device

    Energy Technology Data Exchange (ETDEWEB)

    Kumagaya, Naoki

    1988-11-18

    This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

  9. Transition metal atoms absorbed on MoS2/h-BN heterostructure: stable geometries, band structures and magnetic properties.

    Science.gov (United States)

    Wu, Yanbing; Huang, Zongyu; Liu, Huating; He, Chaoyu; Xue, Lin; Qi, Xiang; Zhong, Jianxin

    2018-06-15

    We have studied the stable geometries, band structures and magnetic properties of transition-metal (V, Cr, Mn, Fe, Co and Ni) atoms absorbed on MoS2/h-BN heterostructure systems by first-principles calculations. By comparing the adsorption energies, we find that the adsorbed transition metal (TM) atoms prefer to stay on the top of Mo atoms. The results of the band structure without spin-orbit coupling (SOC) interaction indicate that the Cr-absorbed systems behave in a similar manner to metals, and the Co-absorbed system exhibits a half-metallic state. We also deduce that the V-, Mn-, Fe-absorbed systems are semiconductors with 100% spin polarization at the HOMO level. The Ni-absorbed system is a nonmagnetic semiconductor. In contrast, the Co-absorbed system exhibits metallic state, and the bandgap of V-absorbed system decreases slightly according to the SOC calculations. In addition, the magnetic moments of all the six TM atoms absorbed on the MoS2/h-BN heterostructure systems decrease when compared with those of their free-standing states.

  10. Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

    Directory of Open Access Journals (Sweden)

    S. Tongay

    2012-01-01

    Full Text Available Using current-voltage (I-V, capacitance-voltage (C-V, and electric-field-modulated Raman measurements, we report on the unique physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene and conventional semiconductors. When chemical-vapor-deposited graphene is transferred onto n-type Si, GaAs, 4H-SiC, and GaN semiconductor substrates, there is a strong van-der-Waals attraction that is accompanied by charge transfer across the interface and the formation of a rectifying (Schottky barrier. Thermionic-emission theory in conjunction with the Schottky-Mott model within the context of bond-polarization theory provides a surprisingly good description of the electrical properties. Applications can be made to sensors, where in forward bias there is exponential sensitivity to changes in the Schottky-barrier height due to the presence of absorbates on the graphene, and to analog devices, for which Schottky barriers are integral components. Such applications are promising because of graphene’s mechanical stability, its resistance to diffusion, its robustness at high temperatures, and its demonstrated capability to embrace multiple functionalities.

  11. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  13. Muonium states in semiconductors

    International Nuclear Information System (INIS)

    Patterson, B.D.

    1987-01-01

    There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

  14. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  15. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  17. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  18. Semiconductor Ion Implanters

    International Nuclear Information System (INIS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-01-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  19. The Physics of Semiconductors

    Science.gov (United States)

    Brennan, Kevin F.

    1999-02-01

    Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

  20. Pure antimony film as saturable absorber for Q-switched erbium-doped fiber laser

    Science.gov (United States)

    Rahman, M. F. A.; Zhalilah, M. Z.; Latiff, A. A.; Rosol, A. H. A.; Lokman, M. Q.; Bushroa, A. R.; Dimyati, K.; Harun, S. W.

    2018-04-01

    This paper reports on the use of Antimony (Sb) polymer film to generate stable Q-switching pulses in Erbium-doped fiber laser (EDFL) cavity. The SA is fabricated by coating a thin layer of Sb on a polyvinyl alcohol (PVA) film through physical vapour deposition (PVD) process. A 1 × 1 mm area of the film SA is cut and integrated into between two fiber ferrules inside the laser cavity for intra-cavity loss modulation. Self-starting and stable Q-switched pulses are obtained within a pump power range from 60 to 142 mW. Within this range, the repetition rate increases from 70.82 to 98.04 kHz, while pulse width decreases from 7.42 to 5.36 μs. The fundamental frequency signal-to-noise ratio of the pulse signal is 74 dB, which indicates the excellent stability of the pulses. The maximum output power and pulse energy are 8.45 mW and 86.19 nJ, respectively. Our demonstration shows that Sb film SA capable of generating stable pulses train operating at 1.55-micron region.

  1. Membrane InP saturable absorbers on silicon as building blocks for transparent optical networks

    NARCIS (Netherlands)

    Raz, O.; Tassaert, M.; Roelkens, G.C.; Dorren, H.J.S.

    2013-01-01

    As silicon photonics continues to gain research and industrial relevance, some of the building blocks in this technology such as modulators and switches still suffer from limitation when it comes to insertion losses and/or extinction ratio. In the past two years we have been investigating a

  2. All-fiber Ho-doped mode-locked oscillator based on a graphene saturable absorber

    Czech Academy of Sciences Publication Activity Database

    Sotor, J.; Pawliszewska, M.; Sobon, G.; Kaczmarek, P.; Przewolka, A.; Pasternak, I.; Cajzl, Jakub; Peterka, Pavel; Honzátko, Pavel; Kašík, Ivan; Strupinski, W.; Abramski, K.

    2016-01-01

    Roč. 41, č. 11 (2016), s. 2592-2595 ISSN 0146-9592 R&D Projects: GA ČR GA14-35256S; GA MŠk(CZ) LD15122 Institutional support: RVO:67985882 Keywords : Fiber lasers * Graphene * Mode-locked oscillators Subject RIV: BH - Optics , Masers, Lasers Impact factor: 3.416, year: 2016

  3. Adaptive inertial shock-absorber

    International Nuclear Information System (INIS)

    Faraj, Rami; Holnicki-Szulc, Jan; Knap, Lech; Seńko, Jarosław

    2016-01-01

    This paper introduces and discusses a new concept of impact absorption by means of impact energy management and storage in dedicated rotating inertial discs. The effectiveness of the concept is demonstrated in a selected case-study involving spinning management, a recently developed novel impact-absorber. A specific control technique performed on this device is demonstrated to be the main source of significant improvement in the overall efficiency of impact damping process. The influence of various parameters on the performance of the shock-absorber is investigated. Design and manufacturing challenges and directions of further research are formulated. (paper)

  4. Saturation of the turbulent dynamo.

    Science.gov (United States)

    Schober, J; Schleicher, D R G; Federrath, C; Bovino, S; Klessen, R S

    2015-08-01

    The origin of strong magnetic fields in the Universe can be explained by amplifying weak seed fields via turbulent motions on small spatial scales and subsequently transporting the magnetic energy to larger scales. This process is known as the turbulent dynamo and depends on the properties of turbulence, i.e., on the hydrodynamical Reynolds number and the compressibility of the gas, and on the magnetic diffusivity. While we know the growth rate of the magnetic energy in the linear regime, the saturation level, i.e., the ratio of magnetic energy to turbulent kinetic energy that can be reached, is not known from analytical calculations. In this paper we present a scale-dependent saturation model based on an effective turbulent resistivity which is determined by the turnover time scale of turbulent eddies and the magnetic energy density. The magnetic resistivity increases compared to the Spitzer value and the effective scale on which the magnetic energy spectrum is at its maximum moves to larger spatial scales. This process ends when the peak reaches a characteristic wave number k☆ which is determined by the critical magnetic Reynolds number. The saturation level of the dynamo also depends on the type of turbulence and differs for the limits of large and small magnetic Prandtl numbers Pm. With our model we find saturation levels between 43.8% and 1.3% for Pm≫1 and between 2.43% and 0.135% for Pm≪1, where the higher values refer to incompressible turbulence and the lower ones to highly compressible turbulence.

  5. Criteria for saturated magnetization loop

    International Nuclear Information System (INIS)

    Harres, A.; Mikhov, M.; Skumryev, V.; Andrade, A.M.H. de; Schmidt, J.E.; Geshev, J.

    2016-01-01

    Proper estimation of magnetization curve parameters is vital in studying magnetic systems. In the present article, criteria for discrimination non-saturated (minor) from saturated (major) hysteresis loops are proposed. These employ the analysis of (i) derivatives of both ascending and descending branches of the loop, (ii) remanent magnetization curves, and (iii) thermomagnetic curves. Computational simulations are used in order to demonstrate their validity. Examples illustrating the applicability of these criteria to well-known real systems, namely Fe_3O_4 and Ni fine particles, are provided. We demonstrate that the anisotropy-field value estimated from a visual examination of an only apparently major hysteresis loop could be more than two times lower than the real one. - Highlights: • Proper estimation of hysteresis-loop parameters is vital in magnetic studies. • We propose criteria for discrimination minor from major hysteresis loops. • The criteria analyze magnetization, remanence and ZFC/FC curves and/or their derivatives. • Examples of their application on real nanoparticles systems are given. • Using the criteria could avoid twofold or bigger saturation-field underestimation errors.

  6. Criteria for saturated magnetization loop

    Energy Technology Data Exchange (ETDEWEB)

    Harres, A. [Departamento de Física, UFSM, Santa Maria, 97105-900 Rio Grande do Sul (Brazil); Mikhov, M. [Faculty of Physics, University of Sofia, 1164 Sofia (Bulgaria); Skumryev, V. [Institució Catalana de Recerca i Estudis Avançats, 08010 Barcelona (Spain); Departament de Física, Universitat Autònoma de Barcelona, 08193 Barcelona (Spain); Andrade, A.M.H. de; Schmidt, J.E. [Instituto de Física, UFRGS, Porto Alegre, 91501-970 Rio Grande do Sul (Brazil); Geshev, J., E-mail: julian@if.ufrgs.br [Departament de Física, Universitat Autònoma de Barcelona, 08193 Barcelona (Spain); Instituto de Física, UFRGS, Porto Alegre, 91501-970 Rio Grande do Sul (Brazil)

    2016-03-15

    Proper estimation of magnetization curve parameters is vital in studying magnetic systems. In the present article, criteria for discrimination non-saturated (minor) from saturated (major) hysteresis loops are proposed. These employ the analysis of (i) derivatives of both ascending and descending branches of the loop, (ii) remanent magnetization curves, and (iii) thermomagnetic curves. Computational simulations are used in order to demonstrate their validity. Examples illustrating the applicability of these criteria to well-known real systems, namely Fe{sub 3}O{sub 4} and Ni fine particles, are provided. We demonstrate that the anisotropy-field value estimated from a visual examination of an only apparently major hysteresis loop could be more than two times lower than the real one. - Highlights: • Proper estimation of hysteresis-loop parameters is vital in magnetic studies. • We propose criteria for discrimination minor from major hysteresis loops. • The criteria analyze magnetization, remanence and ZFC/FC curves and/or their derivatives. • Examples of their application on real nanoparticles systems are given. • Using the criteria could avoid twofold or bigger saturation-field underestimation errors.

  7. Amorphous chalcogenide semiconductors for solid state dosimetric systems of high-energetic ionizing radiation

    International Nuclear Information System (INIS)

    Shpotyuk, O.

    1997-01-01

    The application possibilities of amorphous chalcogenide semiconductors use as radiation-sensitive elements of high-energetic (E > 1 MeV) dosimetric systems are analysed. It is shown that investigated materials are characterized by more wide region of registered absorbed doses and low temperature threshold of radiation information bleaching in comparison with well-known analogies based on coloring oxide glasses. (author)

  8. Electrodes for Semiconductor Gas Sensors

    Science.gov (United States)

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  9. Saturation spectroscopy of an optically opaque argon plasma

    Science.gov (United States)

    Eshel, Ben; Rice, Christopher A.; Perram, Glen P.

    2018-02-01

    A pure argon (Ar) plasma formed by a capacitively coupled radio-frequency discharge was analyzed using Doppler-free saturation spectroscopy. The expected line shape was a characteristic of sub-Doppler spectra in the presence of velocity-changing collisions, a narrow Lorentzian centered on a Doppler pedestal, but the observed line shapes contain a multi-peak structure, attributed to opacity of the medium. Laser absorption and inter-modulated fluorescence spectroscopy measurements were made to validate opacity as a driving factor of the observed line shapes. Spectral line shapes are further complicated by the spatial dependence of the pump laser, probe laser and of the absorbing medium, as well as the large absorbance of the transition under investigation. A numerical line shape was derived by accounting for the spatial variation of the pump and probe with a saturated line shape obtained from the rate equations for an equivalent two-level system. This simulated line shape shows good qualitative agreement with the trends observed in the data.

  10. Self-slowdown and -advancement of fs pulses in a quantum-dot semiconductor optical amplifier

    DEFF Research Database (Denmark)

    Poel, Mike van der; Mørk, Jesper; Hvam, Jørn Märcher

    2005-01-01

    We demonstrate changes in the propagation time of 180 femtosecond pulses in a quantum-dot semiconductor optical amplifier as function of pulse input power and bias current. The results interpreted as a result of pulse reshaping by gain saturation but are also analogous to coherent population osci...

  11. High-field Faraday rotation in II-VI-based semimagnetic semiconductors

    NARCIS (Netherlands)

    Savchuk, AI; Fediv, [No Value; Nikitin, PI; Perrone, A; Tatzenko, OM; Platonov, VV

    The effects of d-d exchange interaction have been studied by measuring high-field Faraday rotation in II-VI-based semimagnetic semiconductors. For Cd1-xMnxTe crystals with x = 0.43 and at room temperature a saturation in magnetic field dependence of the Faraday rotation has been observed. In the

  12. Quantum-correlated two-photon transitions to excitons in semiconductor quantum wells.

    Science.gov (United States)

    Salazar, L J; Guzmán, D A; Rodríguez, F J; Quiroga, L

    2012-02-13

    The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers.

  13. Development of semiconductor electronics

    International Nuclear Information System (INIS)

    Bardeen, John.

    1977-01-01

    In 1931, Wilson applied Block's theory about the energy bands for the motion of electrons in a crystal lattice to semiconductors and showed that conduction can take place in two different ways, by electrons and by holes. Not long afterwards Frenkel showed that these carriers can flow by diffusion in a concentration gradient as well as under the influence of an electric field and wrote down equations for the current flow. The third major contribution, in the late 1930's was the explanation of rectification at a metalsemiconductor contact by Mott and more completely by Schottky. In late 1947 the first transistor of the point contact type was invented by Brattin, Shockley and Bardeen. Then after single crystals of Ge were grown, the junction transistor was developed by the same group. The first silicon transistors appeared in 1954. Then an important step was discovery of the planar transistor by Hoenri in 1960 which led to development of integrated circuits by 1962. Many transistors are produced by batch processing on a slice of silicon. Then in 1965 Mos (Metal-Oxide Semiconductor) transistor and in 1968 LSI (Large Scale Intergration circuits) were developed. Aside from electronic circuits, there are many other applications of semiconductors, including junction power rectifiers, junction luminescence (including lasers), solar batteries, radiation detectors, microwave oscillators and charged-coupled devices for computer memories and devices. One of the latest developments is a microprocessor with thousands of transistors and associated circuitry on a single small chip of silicon. It can be programmed to provide a variety of circuit functions, thus it is not necessary to go through the great expense of LSI's for each desired function, but to use standard microprocessors and program to do the job

  14. Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Walker, A. W., E-mail: alexandre.walker@ise.fraunhofer.de; Heckelmann, S.; Karcher, C.; Höhn, O.; Went, C.; Niemeyer, M.; Bett, A. W.; Lackner, D. [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany)

    2016-04-21

    A power-dependent relative photoluminescence measurement method is developed for double-heterostructures composed of III-V semiconductors. Analyzing the data yields insight into the radiative efficiency of the absorbing layer as a function of laser intensity. Four GaAs samples of different thicknesses are characterized, and the measured data are corrected for dependencies of carrier concentration and photon recycling. This correction procedure is described and discussed in detail in order to determine the material's Shockley-Read-Hall lifetime as a function of excitation intensity. The procedure assumes 100% internal radiative efficiency under the highest injection conditions, and we show this leads to less than 0.5% uncertainty. The resulting GaAs material demonstrates a 5.7 ± 0.5 ns nonradiative lifetime across all samples of similar doping (2–3 × 10{sup 17 }cm{sup −3}) for an injected excess carrier concentration below 4 × 10{sup 12 }cm{sup −3}. This increases considerably up to longer than 1 μs under high injection levels due to a trap saturation effect. The method is also shown to give insight into bulk and interface recombination.

  15. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  16. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  17. Electrowetting on semiconductors

    Science.gov (United States)

    Palma, Cesar; Deegan, Robert

    2015-01-01

    Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

  18. Semiconductor ionizino. radiation detectors

    International Nuclear Information System (INIS)

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  19. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  20. Radiation sterilization of absorbent cotton and of absorbent gauze

    International Nuclear Information System (INIS)

    Hosobuchi, Kazunari; Oka, Mitsuru; Kaneko, Akira; Ishiwata, Hiroshi.

    1986-01-01

    The bioburden of absorbent cotton and of absorbent gauze and their physical and chemical characteristics after irradiation are investigated. The survey conducted on contaminants of 1890 cotton samples from 53 lots and 805 gauze samples from 56 lots showed maximum numbers of microbes per g of the cotton and gauze were 859 (an average of 21.4) and 777 (an average of 42.2), respectively. Isolation and microbiological and biochemical tests of representative microbes indicated that all of them, except one, were bacilli. The sterilization dose at 10 -6 of sterlity assurance level was found to be 2.0 Mrad when irradiated the spores loaded on paper strips and examined populations having graded D values from 0.10 to 0.28 Mrad. The sterilization dose would be about 1.5 Mrad if subjected the average numbers of contaminants observed in this study to irradiation. No significant differences were found between the irradiated samples and control up to 2 Mrad in tensile strength, change of color, absorbency, sedimentation rate, soluble substances, and pH of solutions used for immersion and other tests conventionally used. These results indicate that these products can be sterilized by irradiation. (author)

  1. Photovoltaic characterization of Copper-Indium-Gallium Sulfide (CIGS2) solar cells for lower absorber thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    Vasekar, Parag S., E-mail: psvasekar@yahoo.co [Florida Solar Energy Center, 1679 Clearlake Rd., Cocoa FL, 32922 (United States); Jahagirdar, Anant H.; Dhere, Neelkanth G. [Florida Solar Energy Center, 1679 Clearlake Rd., Cocoa FL, 32922 (United States)

    2010-01-31

    Chalcopyrites are important contenders among thin-film solar cells due to their direct band gap and higher absorption coefficient. Copper-Indium-Gallium Sulfide (CIGS2) is a chalcopyrite material with a near-optimum band gap of {approx} 1.5 eV. Record efficiency of 11.99% has been achieved on a 2.7 {mu}m CIGS2 film prepared by sulfurization at the Florida Solar Energy Center (FSEC) PV Materials Lab. In this work, photovoltaic performance analysis has been carried out for a 1.5 {mu}m absorber prepared under similar conditions as that of a 2.7 {mu}m thick absorber sample. It was observed that there is an increase in diode factor and reverse saturation current density when the absorber thickness was decreased. The diode factor increased from 1.69 to 2.18 and reverse saturation current density increased from 1.04 x 10{sup -10} mA/cm{sup 2} to 1.78 x 10{sup -8} mA/cm{sup 2}. This can be attributed to a decrease in the grain size when the absorber thickness is decreased. It was also observed that there is an improvement in the shunt resistance. Improvement in shunt resistance can be attributed to optimized value of i:ZnO for lower absorber thickness and less shunting paths due to a smoother absorber.

  2. Photovoltaic characterization of Copper-Indium-Gallium Sulfide (CIGS2) solar cells for lower absorber thicknesses

    International Nuclear Information System (INIS)

    Vasekar, Parag S.; Jahagirdar, Anant H.; Dhere, Neelkanth G.

    2010-01-01

    Chalcopyrites are important contenders among thin-film solar cells due to their direct band gap and higher absorption coefficient. Copper-Indium-Gallium Sulfide (CIGS2) is a chalcopyrite material with a near-optimum band gap of ∼ 1.5 eV. Record efficiency of 11.99% has been achieved on a 2.7 μm CIGS2 film prepared by sulfurization at the Florida Solar Energy Center (FSEC) PV Materials Lab. In this work, photovoltaic performance analysis has been carried out for a 1.5 μm absorber prepared under similar conditions as that of a 2.7 μm thick absorber sample. It was observed that there is an increase in diode factor and reverse saturation current density when the absorber thickness was decreased. The diode factor increased from 1.69 to 2.18 and reverse saturation current density increased from 1.04 x 10 -10 mA/cm 2 to 1.78 x 10 -8 mA/cm 2 . This can be attributed to a decrease in the grain size when the absorber thickness is decreased. It was also observed that there is an improvement in the shunt resistance. Improvement in shunt resistance can be attributed to optimized value of i:ZnO for lower absorber thickness and less shunting paths due to a smoother absorber.

  3. Observability of linear systems with saturated outputs

    NARCIS (Netherlands)

    Koplon, R.; Sontag, E.D.; Hautus, M.L.J.

    1994-01-01

    We present necessary and sufficient conditions for observability of the class of output-saturated systems. These are linear systems whose output passes through a saturation function before it can be measured.

  4. Fault tolerant control of systems with saturations

    DEFF Research Database (Denmark)

    Niemann, Hans Henrik

    2013-01-01

    This paper presents framework for fault tolerant controllers (FTC) that includes input saturation. The controller architecture known from FTC is based on the Youla-Jabr-Bongiorno-Kucera (YJBK) parameterization is extended to handle input saturation. Applying this controller architecture in connec......This paper presents framework for fault tolerant controllers (FTC) that includes input saturation. The controller architecture known from FTC is based on the Youla-Jabr-Bongiorno-Kucera (YJBK) parameterization is extended to handle input saturation. Applying this controller architecture...... in connection with faulty systems including input saturation gives an additional YJBK transfer function related to the input saturation. In the fault free case, this additional YJBK transfer function can be applied directly for optimizing the feedback loop around the input saturation. In the faulty case......, the design problem is a mixed design problem involved both parametric faults and input saturation....

  5. Synthesis and characterization of a new organic semiconductor material

    Energy Technology Data Exchange (ETDEWEB)

    Tiffour, Imane [Laboratoire de Génie Physique, Département de Physique, Université de Tiaret, Tiaret 14000 (Algeria); Faculté des Sciences et Technologies, Université Mustapha Stambouli, Mascara 29000 (Algeria); Dehbi, Abdelkader [Laboratoire de Génie Physique, Département de Physique, Université de Tiaret, Tiaret 14000 (Algeria); Mourad, Abdel-Hamid I., E-mail: ahmourad@uaeu.ac.ae [Mechanical Engineering Department, Faculty of Engineering, United Arab Emirates University, Al-Ain, P.O. Box 15551 (United Arab Emirates); Belfedal, Abdelkader [Faculté des Sciences et Technologies, Université Mustapha Stambouli, Mascara 29000 (Algeria); LPCMME, Département de Physique, Université d' Oran Es-sénia, 3100 Oran (Algeria)

    2016-08-01

    The objective of this study is to create an ideal mixture of Acetaminophen/Curcumin leading to a new and improved semiconductor material, by a study of the electrical, thermal and optical properties. This new material will be compared with existing semiconductor technology to discuss its viability within the industry. The electrical properties were investigated using complex impedance spectroscopy and optical properties were studied by means of UV-Vis spectrophotometry. The electric conductivity σ, the dielectric constant ε{sub r}, the activation energy E{sub a}, the optical transmittance T and the gap energy E{sub g} have been investigated in order to characterize our organic material. The electrical conductivity of the material is approximately 10{sup −5} S/m at room temperature, increasing the temperature causes σ to increase exponentially to approximately 10{sup −4} S/m. The activation energy obtained for the material is equal to 0.49 ± 0.02 ev. The optical absorption spectra show that the investigating material has absorbance in the visible range with a maximum wavelength (λ{sub max}) 424 nm. From analysis, the absorption spectra it was found the optical band gap equal to 2.6 ± 0.02 eV and 2.46 ± 0.02 eV for the direct and indirect transition, respectively. In general, the study shows that the developed material has characteristics of organic semiconductor material that has a promising future in the field of organic electronics and their potential applications, e.g., photovoltaic cells. - Highlights: • Development of a new organic acetaminophen/Curcumin semiconductor material. • The developed material has characteristics of an organic semiconductor. • It has electrical conductivity comparable to available organic semiconductors. • It has high optical transmittance and low permittivity/dielectric constant.

  6. Synthesis and characterization of a new organic semiconductor material

    International Nuclear Information System (INIS)

    Tiffour, Imane; Dehbi, Abdelkader; Mourad, Abdel-Hamid I.; Belfedal, Abdelkader

    2016-01-01

    The objective of this study is to create an ideal mixture of Acetaminophen/Curcumin leading to a new and improved semiconductor material, by a study of the electrical, thermal and optical properties. This new material will be compared with existing semiconductor technology to discuss its viability within the industry. The electrical properties were investigated using complex impedance spectroscopy and optical properties were studied by means of UV-Vis spectrophotometry. The electric conductivity σ, the dielectric constant ε_r, the activation energy E_a, the optical transmittance T and the gap energy E_g have been investigated in order to characterize our organic material. The electrical conductivity of the material is approximately 10"−"5 S/m at room temperature, increasing the temperature causes σ to increase exponentially to approximately 10"−"4 S/m. The activation energy obtained for the material is equal to 0.49 ± 0.02 ev. The optical absorption spectra show that the investigating material has absorbance in the visible range with a maximum wavelength (λ_m_a_x) 424 nm. From analysis, the absorption spectra it was found the optical band gap equal to 2.6 ± 0.02 eV and 2.46 ± 0.02 eV for the direct and indirect transition, respectively. In general, the study shows that the developed material has characteristics of organic semiconductor material that has a promising future in the field of organic electronics and their potential applications, e.g., photovoltaic cells. - Highlights: • Development of a new organic acetaminophen/Curcumin semiconductor material. • The developed material has characteristics of an organic semiconductor. • It has electrical conductivity comparable to available organic semiconductors. • It has high optical transmittance and low permittivity/dielectric constant.

  7. Effect of transferrin saturation on internal iron exchange

    International Nuclear Information System (INIS)

    Bergamaschi, G.; Eng, M.J.; Huebers, H.A.; Finch, C.A.

    1986-01-01

    Radioiron was introduced into the intestinal lumen to evaluate absorption, injected as nonviable red cells to evaluate reticuloendothelial (RE) processing of iron, and injected as hemoglobin to evaluate hepatocyte iron processing. Redistribution of iron through the plasma was evaluated in control animals and animals whose transferrin was saturated by iron infusion. Radioiron introduced into the lumen of the gut as ferrous sulfate and as transferrin-bound iron was absorbed about half as well in iron-infused animals, and absorbed iron was localized in the liver. The similar absorption of transferrin-bound iron suggested that absorption of ferrous iron occurred via the mucosal cell and did not enter by diffusion. The decrease in absorption was associated with an increase in mucosal iron and ferritin content produced by the iron infusion. An inverse relationship (r = -0.895) was shown between mucosal ferritin iron and absorption. When iron was injected as nonviable red cells, it was deposited predominantly in reticuloendothelial cells of the spleen. Return of this radioiron to the plasma was only 6% of that in control animals. While there was some movement of iron from spleen to liver, this could be accounted for by intravascular hemolysis. Injected hemoglobin tagged with radioiron was for the most part taken up and held by the liver. Some 13% initially localized in the marrow in iron-infused animals was shown to be storage iron unavailable for hemoglobin synthesis. These studies demonstrate the hepatic trapping of absorbed iron and the inability of either RE cell or hepatocyte to release iron in the transferrin-saturated animal

  8. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  9. Insight into magnetorheological shock absorbers

    CERN Document Server

    Gołdasz, Janusz

    2015-01-01

    This book deals with magnetorheological fluid theory, modeling and applications of automotive magnetorheological dampers. On the theoretical side a review of MR fluid compositions and key factors affecting the characteristics of these fluids is followed by a description of existing applications in the area of vibration isolation and flow-mode shock absorbers in particular. As a majority of existing magnetorheological devices operates in a so-called flow mode a critical review is carried out in that regard. Specifically, the authors highlight common configurations of flow-mode magnetorheological shock absorbers, or so-called MR dampers that have been considered by the automotive industry for controlled chassis applications. The authors focus on single-tube dampers utilizing a piston assembly with one coil or multiple coils and at least one annular flow channel in the piston.

  10. Acoustic Properties of Absorbent Asphalts

    Science.gov (United States)

    Trematerra, Amelia; Lombardi, Ilaria

    2017-08-01

    Road traffic is one of the greater cause of noise pollution in urban centers; a prolonged exposure to this source of noise disturbs populations subjected to it. In this paper is reported a study on the absorbent coefficients of asphalt. The acoustic measurements are carried out with a impedance tube (tube of Kundt). The sample are measured in three conditions: with dry material (traditional), “wet” asphalt and “dirty” asphalt.

  11. All-optical reservoir computer based on saturation of absorption.

    Science.gov (United States)

    Dejonckheere, Antoine; Duport, François; Smerieri, Anteo; Fang, Li; Oudar, Jean-Louis; Haelterman, Marc; Massar, Serge

    2014-05-05

    Reservoir computing is a new bio-inspired computation paradigm. It exploits a dynamical system driven by a time-dependent input to carry out computation. For efficient information processing, only a few parameters of the reservoir needs to be tuned, which makes it a promising framework for hardware implementation. Recently, electronic, opto-electronic and all-optical experimental reservoir computers were reported. In those implementations, the nonlinear response of the reservoir is provided by active devices such as optoelectronic modulators or optical amplifiers. By contrast, we propose here the first reservoir computer based on a fully passive nonlinearity, namely the saturable absorption of a semiconductor mirror. Our experimental setup constitutes an important step towards the development of ultrafast low-consumption analog computers.

  12. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  13. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  14. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  15. Semiconductor photocatalysis principles and applications

    CERN Document Server

    Kisch, Horst

    2014-01-01

    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  16. Progress in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Walton, J.; Gatti, E.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

  17. Semiconductor materials and their properties

    NARCIS (Netherlands)

    Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

    2017-01-01

    Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

  18. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  19. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  20. Magnetic graphene enabled tunable microwave absorber via thermal control

    Science.gov (United States)

    Quan, L.; Qin, F. X.; Li, Y. H.; Estevez, D.; Fu, G. J.; Wang, H.; Peng, H.-X.

    2018-06-01

    By synthesizing nitrogen-doped graphene (NG) via a facile thermal annealing method, a fine control of the amount and location of doped nitrogen as well as the oxygen-containing functional groups is achieved with varying annealing temperature. The favorable magnetic properties have been achieved for N-doped rGO samples obtained at two temperatures of all NG samples, i.e., 500 °C and 900 °C with saturation magnetization of 0.63 emu g‑1 and 0.67 emu g‑1 at 2 K, respectively. This is attributed to the optimized competition of the N-doping and reduction process at 500 °C and the dominated reduction process at 900 °C. NG obtained at 300 °C affords the best overall absorbing performance: when the absorber thickness is 3.0 mm, the maximum absorption was ‑24.6 dB at 8.51 GHz, and the absorption bandwidth was 4.89 GHz (7.55–12.44 GHz) below ‑10 dB. It owes its large absorbing intensity to the good impedance match and significant dielectric loss. The broad absorption bandwidth benefits from local fluctuations of dielectric responses contributed by competing mechanisms. Despite the significant contribution from materials loss to the absorption, the one quarter-wavelength model is found to be responsible for the reflection loss peak positions. Of particular significance is that an appropriate set of electromagnetic parameters associated with reasonable reduction is readily accessible by convenient control of annealing temperature to modulate the microwave absorbing features of graphene. Thus, NG prepared by thermal annealing promises to be a highly efficient microwave absorbent.

  1. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  2. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  3. Energy response of neutron area monitor with silicon semiconductor detector

    International Nuclear Information System (INIS)

    Kitaguchi, Hiroshi; Izumi, Sigeru; Kobayashi, Kaoru; Kaihara, Akihisa; Nakamura, Takashi.

    1993-01-01

    A prototype neutron area monitor with a silicon semiconductor detector has been developed which has the energy response of 1 cm dose equivalent recommended by the ICRP-26. Boron and proton radiators are coated on the surface of the silicon semiconductor detector. The detector is set at the center of a cylindrical polyethylene moderator. This moderator is covered by a porous cadmium board which serves as the thermal neutron absorber. Neutrons are detected as α-particles generated by the nuclear reaction 10 B(n,α) 7 Li and as recoil protons generated by the interaction of fast neutrons with hydrogen. The neutron energy response of the monitor was measured using thermal neutrons and monoenergetic fast neutrons generated by an accelerator. The response was consistent with the 1 cm dose equivalent response required for the monitor within ±34% in the range of 0.025 - 15 Mev. (author)

  4. Mechanics of non-saturated soils

    International Nuclear Information System (INIS)

    Coussy, O.; Fleureau, J.M.

    2002-01-01

    This book presents the different ways to approach the mechanics of non saturated soils, from the physico-chemical aspect to the mechanical aspect, from the experiment to the theoretical modeling, from the laboratory to the workmanship, and from the microscopic scale to the macroscopic one. Content: water and its representation; experimental bases of the behaviour of non-saturated soils; transfer laws in non-saturated environment; energy approach of the behaviour of non-saturated soils; homogenization for the non-saturated soils; plasticity and hysteresis; dams and backfilling; elaborated barriers. (J.S.)

  5. Semiconductor radiation detector

    Science.gov (United States)

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  6. Semiconductor testing method

    International Nuclear Information System (INIS)

    Brown, Stephen.

    1992-01-01

    In a method of avoiding use of nuclear radiation, eg gamma rays, X-rays, electron beams, for testing semiconductor components for resistance to hard radiation, which hard radiation causes data corruption in some memory devices and 'latch-up' in others, similar fault effects can be achieved using a xenon or other 'light' flash gun even though the penetration of light is significantly less than that of gamma rays. The method involves treating a device with gamma radiation, measuring a particular fault current at the onset of a fault event, repeating the test with light to confirm the occurrence of the fault event at the same measured fault current, and using the fault current value as a reference for future tests using light on similar devices. (author)

  7. Radial semiconductor drift chambers

    International Nuclear Information System (INIS)

    Rawlings, K.J.

    1987-01-01

    The conditions under which the energy resolution of a radial semiconductor drift chamber based detector system becomes dominated by the step noise from the detector dark current have been investigated. To minimise the drift chamber dark current attention should be paid to carrier generation at Si/SiO 2 interfaces. This consideration conflicts with the desire to reduce the signal risetime: a higher drift field for shorter signal pulses requires a larger area of SiO 2 . Calculations for the single shaping and pseudo Gaussian passive filters indicate that for the same degree of signal risetime sensitivity in a system dominated by the step noise from the detector dark current, the pseudo Gaussian filter gives only a 3% improvement in signal/noise and 12% improvement in rate capability compared with the single shaper performance. (orig.)

  8. Energy distribution in semiconductors

    International Nuclear Information System (INIS)

    Ance, C.

    1979-01-01

    For various semiconductors the dispersive energy Esub(d) defined in the Wemple-Didomenico model is connected with the covalent and ionic energies Esub(h) and C. A continuous curve of ionicity against the ratio of the two energies Esub(A) and Esub(B), connected to Esub(h) and C is reported. Afromowitz's model is applied to the ternary compounds Gasub(1-x)Alsub(x)Sb using optical decomposition. From these results the average energy gap Esub(g) is given by Esub(g) = D 0 M 0 sup((IB))/(epsilon 1 (0)-1) where M 0 sup((IB)) is the interband transition contribution to the optical moment M 0 . (author)

  9. Organic Semiconductor Photovoltaics

    Science.gov (United States)

    Sariciftci, Niyazi Serdar

    2005-03-01

    Recent developments on organic photovoltaic elements are reviewed. Semiconducting conjugated polymers and molecules as well as nanocrystalline inorganic semiconductors are used in composite thin films. The photophysics of such photoactive devices is based on the photoinduced charge transfer from donor type semiconducting molecules onto acceptor type molecules such as Buckminsterfullerene, C60 and/or nanoparticles. Similar to the first steps in natural photosynthesis, this photoinduced electron transfer leads to a number of potentially interesting applications which include sensitization of the photoconductivity and photovoltaic phenomena. Examples of photovoltaic architectures are discussed with their potential in terrestrial solar energy conversion. Several materials are introduced and discussed for their photovoltaic activities. Furthermore, nanomorphology has been investigated with AFM, SEM and TEM. The morphology/property relationship for a given photoactive system is found to be a major effect.

  10. An ultra-broadband multilayered graphene absorber

    KAUST Repository

    Amin, Muhammad; Farhat, Mohamed; Bagci, Hakan

    2013-01-01

    An ultra-broadband multilayered graphene absorber operating at terahertz (THz) frequencies is proposed. The absorber design makes use of three mechanisms: (i) The graphene layers are asymmetrically patterned to support higher order surface plasmon

  11. Carbon dioxide absorber and regeneration assemblies useful for power plant flue gas

    Science.gov (United States)

    Vimalchand, Pannalal; Liu, Guohai; Peng, Wan Wang

    2012-11-06

    Disclosed are apparatus and method to treat large amounts of flue gas from a pulverized coal combustion power plant. The flue gas is contacted with solid sorbents to selectively absorb CO.sub.2, which is then released as a nearly pure CO.sub.2 gas stream upon regeneration at higher temperature. The method is capable of handling the necessary sorbent circulation rates of tens of millions of lbs/hr to separate CO.sub.2 from a power plant's flue gas stream. Because pressurizing large amounts of flue gas is cost prohibitive, the method of this invention minimizes the overall pressure drop in the absorption section to less than 25 inches of water column. The internal circulation of sorbent within the absorber assembly in the proposed method not only minimizes temperature increases in the absorber to less than 25.degree. F., but also increases the CO.sub.2 concentration in the sorbent to near saturation levels. Saturating the sorbent with CO.sub.2 in the absorber section minimizes the heat energy needed for sorbent regeneration. The commercial embodiments of the proposed method can be optimized for sorbents with slower or faster absorption kinetics, low or high heat release rates, low or high saturation capacities and slower or faster regeneration kinetics.

  12. High short-circuit current density CdTe solar cells using all-electrodeposited semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Echendu, O.K., E-mail: oechendu@yahoo.com; Fauzi, F.; Weerasinghe, A.R.; Dharmadasa, I.M.

    2014-04-01

    CdS/CdTe and ZnS/CdTe n–n heterojunction solar cells have been fabricated using all-electrodeposited semiconductors. The best devices show remarkable high short-circuit current densities of 38.5 mAcm{sup −2} and 47.8 mAcm{sup −2}, open-circuit voltages of 630 mV and 646 mV and conversion efficiencies of 8.0% and 12.0% respectively. The major strength of these device structures lies in the combination of n–n heterojunction with a large Schottky barrier at the n-CdTe/metal back contact which provides the required band bending for the separation of photo-generated charge carriers. This is in addition to the use of a high quality n-type CdTe absorber layer with high electron mobility. The potential barrier heights estimated for these devices from the current–voltage characteristics exceed 1.09 eV and 1.13 eV for CdS/CdTe and ZnS/CdTe cells respectively. The diode rectification factors of both devices are in excess of four orders of magnitude with reverse saturation current densities of 1.0 × 10{sup −7} Acm{sup −2} and 4.0 × 10{sup −7} Acm{sup −2} respectively. These all-electrodeposited solar cell device structures are currently being studied and developed as an alternative to the well-known p–n junction structures which utilise chemical bath-deposited CdS. The preliminary material growth, device fabrication and assessment results are presented in this paper. - Highlights: • Two-electrode deposition. • High J{sub sc} Schottky barrier solar cells. • CdCl{sub 2} + CdF{sub 2} treatment.

  13. Development of an oxygen saturation measuring system by using near-infrared spectroscopy

    Science.gov (United States)

    Kono, K.; Nakamachi, E.; Morita, Y.

    2017-08-01

    Recently, the hypoxia imaging has been recognized as the advanced technique to detect cancers because of a strong relationship with the biological characterization of cancer. In previous studies, hypoxia imaging systems for endoscopic diagnosis have been developed. However, these imaging technologies using the visible light can observe only blood vessels in gastric mucous membrane. Therefore, they could not detect scirrhous gastric cancer which accounts for 10% of all gastric cancers and spreads rapidly into submucous membrane. To overcome this problem, we developed a measuring system of blood oxygen saturation in submucous membrane by using near-infrared (NIR) spectroscopy. NIR, which has high permeability for bio-tissues and high absorbency for hemoglobin, can image and observe blood vessels in submucous membrane. NIR system with LED lights and a CCD camera module was developed to image blood vessels. We measured blood oxygen saturation using the optical density ratio (ODR) of two wavelengths, based on Lambert-Beer law. To image blood vessel clearly and measure blood oxygen saturation accurately, we searched two optimum wavelengths by using a multilayer human gastric-like phantom which has same optical properties as human gastric one. By using Monte Carlo simulation of light propagation, we derived the relationship between the ODR and blood oxygen saturation and elucidated the influence of blood vessel depth on measuring blood oxygen saturation. The oxygen saturation measuring methodology was validated with experiments using our NIR system. Finally, it was confirmed that our system can detect oxygen saturation in various depth blood vessels accurately.

  14. Saturation in dual radiation action

    International Nuclear Information System (INIS)

    Rossi, H.H.; Zaider, M.

    1988-01-01

    The theory of dual radiation action (TDRA) was developed with the aim of applying microdosimetry to radiobiology. It therefore can deal only with the first phases in a long chain of events that results in patent effects. It is, however, clear that the initial spatial and temporal pattern of energy deposition has a profound influence on the ultimate outcome. As often happens, the early formulation of the theory contained a number of simplifying assumptions. Although most of these were explicitly stated when the first version of the TDRA was published experimental data obtained when the limitations are important were cited as contrary evidence causing considerable confusion. A more advanced version eliminated some of the restrictions but there remain others, one of which relates to certain aspects of saturation which are addressed here

  15. Simulation and Performance Test Technology Development for Semiconductor Radiation Detection Instrument Fabrication

    International Nuclear Information System (INIS)

    Kim, Jong Kyung; Lee, W. G.; Kim, S. Y.; Shin, C. H.; Kim, K. O.; Park, J. M.; Jang, D. Y.; Kang, J. S.

    2010-06-01

    - Analysis on the Absorbed Dose and Electron Generation by Using MCNPX Code - Analysis on the Change of Measured Energy Spectrum As a Function of Bias Voltage Applied in Semiconductor Detector - Comparison of Monte Carlo Simulation Considering the Charge Collection Efficiency and Experimental Result - Development of Semiconductor Sensor Design Code Based on the Graphic User Interface - Analysis on Depth Profile of Ion-implanted Semiconductor Wafer Surface and Naturally Generated SiO2 Insulation Layer Using Auger Electron Spectroscopy - Measurement of AFM Images and Roughness to Abalyze Surface of Semiconductor Wafer with respect to Annealing and Cleaning Process - Measurement of Physical Properties for Semiconductor Detector Surface after CZT Passivation Process - Evaluation of Crystal Structure and Specific Resistance of CZT - Measurement/Analysis on Band Structure of CZT Crystal - Evaluation of Neutron Convertor Layer with respect to Change in Temperature - Measurement/Evaluation of physical characteristics for lattice parameter, specific resistance, and band structure of CZT crystal - Measurement/Evaluation of lattice transition of SiC semiconductor detector after radiation irradiation - Measurement/Evaluation of performance of semiconductor detector with respect to exposure in high temperature environment

  16. Activation of molecular catalysts using semiconductor quantum dots

    Science.gov (United States)

    Meyer, Thomas J [Chapel Hill, NC; Sykora, Milan [Los Alamos, NM; Klimov, Victor I [Los Alamos, NM

    2011-10-04

    Photocatalytic materials based on coupling of semiconductor nanocrystalline quantum dots (NQD) and molecular catalysts. These materials have capability to drive or catalyze non-spontaneous chemical reactions in the presence of visible radiation, ultraviolet radiation, or both. The NQD functions in these materials as a light absorber and charge generator. Following light absorption, the NQD activates a molecular catalyst adsorbed on the surface of the NQD via transfer of one or more charges (either electrons or electron-holes) from the NQD to the molecular catalyst. The activated molecular catalyst can then drive a chemical reaction. A photoelectrolytic device that includes such photocatalytic materials is also described.

  17. Piezooptic effect of absorbing environment

    Directory of Open Access Journals (Sweden)

    Ю. А. Рудяк

    2013-07-01

    Full Text Available Application of piezooptic effect of absorbing environment for the definition of the parameter of stress deformation state was examined. The analysis of dielectric permeability tensor of imaginary parts was done. It is shown that changes in the real part dielectric permeability tensor mainly the indicator of fracture was fixed by means of mechanics interference methods and the changes in the imaginary part (α – real rate of absorption can be measured by means of analysis of light absorption and thus stress deformation state can be determined

  18. Energy absorbers as pipe supports

    International Nuclear Information System (INIS)

    Khlafallah, M.Z.; Lee, H.M.

    1985-01-01

    With the exception of springs, pipe supports currently in use are designed with the intent of maintaining their rigidity under load. Energy dissipation mechanisms in these pipe supports result in system damping on the order presented by Code Case N-411 of ASME Section III code. Examples of these energy dissipation mechanisms are fluids and gaps in snubbers, gaps in frame supports, and friction in springs and frame supports. If energy absorbing supports designed in accordance with Code Case N-420 are used, higher additional damping will result

  19. Magnetic excitations in ferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

    2009-01-01

    Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

  20. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  1. Control of ultrafast pulse propagation in semiconductor components

    DEFF Research Database (Denmark)

    Poel, Mike van der; Hansen, Per Lunnemann; Mørk, Jesper

    2009-01-01

    Time shifting of optical pulses with duration in the range from 100 fs to a few ps represents one extreme of slow light, where THz bandwidth for the slow down or speed up is necessary. The physics of the time shifting of such very short pulses involves the gain saturation of the optical medium...... and is different from the slow-light mechanisms responsible for time shifting of pulses of narrower bandwidth. Experimental and theoretical results with semiconductor components are presented, emphasizing the physics as well as the limitations imposed by the dynamical processes....

  2. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1990-01-01

    The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

  3. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

  4. Semiconductor device comprising a pn-heterojunction

    NARCIS (Netherlands)

    2007-01-01

    An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

  5. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  6. Multi-channel coherent perfect absorbers

    KAUST Repository

    Bai, Ping

    2016-05-18

    The absorption efficiency of a coherent perfect absorber usually depends on the phase coherence of the incident waves on the surfaces. Here, we present a scheme to create a multi-channel coherent perfect absorber in which the constraint of phase coherence is loosened. The scheme has a multi-layer structure such that incident waves in different channels with different angular momenta can be simultaneously and perfectly absorbed. This absorber is robust in achieving high absorption efficiency even if the incident waves become "incoherent" and possess "random" wave fronts. Our work demonstrates a unique approach to designing highly efficient metamaterial absorbers. © CopyrightEPLA, 2016.

  7. Multi-channel coherent perfect absorbers

    KAUST Repository

    Bai, Ping; Wu, Ying; Lai, Yun

    2016-01-01

    The absorption efficiency of a coherent perfect absorber usually depends on the phase coherence of the incident waves on the surfaces. Here, we present a scheme to create a multi-channel coherent perfect absorber in which the constraint of phase coherence is loosened. The scheme has a multi-layer structure such that incident waves in different channels with different angular momenta can be simultaneously and perfectly absorbed. This absorber is robust in achieving high absorption efficiency even if the incident waves become "incoherent" and possess "random" wave fronts. Our work demonstrates a unique approach to designing highly efficient metamaterial absorbers. © CopyrightEPLA, 2016.

  8. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

    NARCIS (Netherlands)

    2008-01-01

    The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

  9. Selective, electrochemical etching of a semiconductor

    Science.gov (United States)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  10. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  11. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  12. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  13. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  14. Semiconductor technology program. Progress briefs

    Science.gov (United States)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  15. Semiconductor radiation detectors. Device physics

    International Nuclear Information System (INIS)

    Lutz, G.

    2007-01-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  16. Self-assembling peptide semiconductors

    Science.gov (United States)

    Tao, Kai; Makam, Pandeeswar; Aizen, Ruth; Gazit, Ehud

    2017-01-01

    Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems. PMID:29146781

  17. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  18. Saturable Absorption and Modulation Characteristics of Laser with Graphene Oxide Spin Coated on ITO Substrate

    Directory of Open Access Journals (Sweden)

    Xin Li

    2014-01-01

    Full Text Available The graphene oxide (GO thin film has been obtained by mixture of GO spin coated on substrate of indium tin oxide (ITO. The experiment has shown that continuous-wave laser is modulated when the graphene oxide saturable absorber (GO-SA is employed in the 1064 nm laser cavity. The shortest pulse width is 108 ns at the pump power of 5.04 W. Other output laser characteristics, such as the threshold pump power, the repetition rate, and the peak power, have also been measured. The results have demonstrated that graphene oxide is an available saturable absorber for 1064 nm passive Q-switching laser.

  19. Wake fields in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1994-05-01

    It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

  20. Semiconductor research with reactor neutrons

    International Nuclear Information System (INIS)

    Kimura, Itsuro

    1992-01-01

    Reactor neutrons play an important role for characterization of semiconductor materials as same as other advanced materials. On the other hand reactor neutrons bring about not only malignant irradiation effects called radiation damage, but also useful effects such as neutron transmutation doping and defect formation for opto-electronics. Research works on semiconductor materials with the reactor neutrons of the Kyoto University Reactor (KUR) are briefly reviewed. In this review, a stress is laid on the present author's works. (author)

  1. Semiconductor crystal high resolution imager

    Science.gov (United States)

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  2. Dissipative chaos in semiconductor superlattices

    Directory of Open Access Journals (Sweden)

    F. Moghadam

    2008-03-01

    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  3. Reducing leakage current in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

    2018-03-06

    A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

  4. Optical orientation in ferromagnet/semiconductor hybrids

    International Nuclear Information System (INIS)

    Korenev, V L

    2008-01-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

  5. Optical orientation in ferromagnet/semiconductor hybrids

    Science.gov (United States)

    Korenev, V. L.

    2008-11-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

  6. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    OpenAIRE

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  7. Semiconductors for plasmonics and metamaterials

    DEFF Research Database (Denmark)

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

  8. Ripening of Semiconductor Nanoplatelets.

    Science.gov (United States)

    Ott, Florian D; Riedinger, Andreas; Ochsenbein, David R; Knüsel, Philippe N; Erwin, Steven C; Mazzotti, Marco; Norris, David J

    2017-11-08

    Ostwald ripening describes how the size distribution of colloidal particles evolves with time due to thermodynamic driving forces. Typically, small particles shrink and provide material to larger particles, which leads to size defocusing. Semiconductor nanoplatelets, thin quasi-two-dimensional (2D) particles with thicknesses of only a few atomic layers but larger lateral dimensions, offer a unique system to investigate this phenomenon. Experiments show that the distribution of nanoplatelet thicknesses does not defocus during ripening, but instead jumps sequentially from m to (m + 1) monolayers, allowing precise thickness control. We investigate how this counterintuitive process occurs in CdSe nanoplatelets. We develop a microscopic model that treats the kinetics and thermodynamics of attachment and detachment of monomers as a function of their concentration. We then simulate the growth process from nucleation through ripening. For a given thickness, we observe Ostwald ripening in the lateral direction, but none perpendicular. Thicker populations arise instead from nuclei that capture material from thinner nanoplatelets as they dissolve laterally. Optical experiments that attempt to track the thickness and lateral extent of nanoplatelets during ripening appear consistent with these conclusions. Understanding such effects can lead to better synthetic control, enabling further exploration of quasi-2D nanomaterials.

  9. A semiconductor laser device

    Energy Technology Data Exchange (ETDEWEB)

    Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

    1984-03-17

    A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

  10. Semiconductor integrated circuits

    International Nuclear Information System (INIS)

    Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

    1979-01-01

    An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

  11. Impurity gettering in semiconductors

    Science.gov (United States)

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  12. Semiconductor acceleration sensor

    Science.gov (United States)

    Ueyanagi, Katsumichi; Kobayashi, Mitsuo; Goto, Tomoaki

    1996-09-01

    This paper reports a practical semiconductor acceleration sensor especially suited for automotive air bag systems. The acceleration sensor includes four beams arranged in a swastika structure. Two piezoresistors are formed on each beam. These eight piezoresistors constitute a Wheatstone bridge. The swastika structure of the sensing elements, an upper glass plate and a lower glass plate exhibit the squeeze film effect which enhances air dumping, by which the constituent silicon is prevented from breakdown. The present acceleration sensor has the following features. The acceleration force component perpendicular to the sensing direction can be cancelled. The cross-axis sensitivity is less than 3 percent. And, the erroneous offset caused by the differences between the thermal expansion coefficients of the constituent materials can be canceled. The high aspect ratio configuration realized by plasma etching facilitates reducing the dimensions and improving the sensitivity of the acceleration sensor. The present acceleration sensor is 3.9 mm by 3.9 mm in area and 1.2 mm in thickness. The present acceleration sensor can measure from -50 to +50 G with sensitivity of 0.275 mV/G and with non-linearity of less than 1 percent. The acceleration sensor withstands shock of 3000 G.

  13. Sensorial saturation for infants' pain.

    Science.gov (United States)

    Bellieni, Carlo Valerio; Tei, Monica; Coccina, Francesca; Buonocore, Giuseppe

    2012-04-01

    Sensorial saturation (SS) is a multisensorial stimulation consisting of delicate tactile, gustative, auditory and visual stimuli. This procedure consists of simultaneously: attracting the infant's attention by massaging the infant's face; speaking to the infant gently, but firmly, and instilling a sweet solution on the infant's tongue. We performed a systematic Medline search of for articles focusing on human neonatal studies related to SS. The search was performed within the last 10 years and was current as of January 2012. We retrieved 8 articles that used a complete form of SS and 2 articles with an incomplete SS. Data show that the use of SS is effective in relieving newborns' pain. Oral solution alone are less effective than SS, but the stimuli without oral sweet solution are ineffective. the partial forms of SS have some effectiveness, but minor than the complete SS. Only one article showed lack of SS as analgesic method, after endotracheal suctioning. SS can be used for all newborns undergoing blood samples or other minor painful procedures. It is more effective than oral sugar alone. SS also promotes interaction between nurse and infant and is a simple effective form of analgesia for the neonatal intensive care unit.

  14. Δ isobars and nuclear saturation

    Science.gov (United States)

    Ekström, A.; Hagen, G.; Morris, T. D.; Papenbrock, T.; Schwartz, P. D.

    2018-02-01

    We construct a nuclear interaction in chiral effective field theory with explicit inclusion of the Δ -isobar Δ (1232 ) degree of freedom at all orders up to next-to-next-to-leading order (NNLO). We use pion-nucleon (π N ) low-energy constants (LECs) from a Roy-Steiner analysis of π N scattering data, optimize the LECs in the contact potentials up to NNLO to reproduce low-energy nucleon-nucleon scattering phase shifts, and constrain the three-nucleon interaction at NNLO to reproduce the binding energy and point-proton radius of 4He. For heavier nuclei we use the coupled-cluster method to compute binding energies, radii, and neutron skins. We find that radii and binding energies are much improved for interactions with explicit inclusion of Δ (1232 ) , while Δ -less interactions produce nuclei that are not bound with respect to breakup into α particles. The saturation of nuclear matter is significantly improved, and its symmetry energy is consistent with empirical estimates.

  15. Changes induced in spice paprika powder by treatment with ionizing radiation and saturated steam

    International Nuclear Information System (INIS)

    Kispeter, J.; Bajusz-Kabok, K.; Fekete, M.; Szabo, G.; Fodor, E.; Pali, T.

    2003-01-01

    The changes in spice paprika powder induced by ionizing radiation, saturated steam (SS) and their combination were studied as a function of the absorbed radiation dose and the storage time. The SS treatment lead to a decrease in color content (lightening) after 12 weeks of storage, together with the persistence of free radicals and viscosity changes for a longer period. The results suggest that ionizing radiation is a more advantageous method as concerns preservation of the quality of spice paprika

  16. Nonlinear optimal filter technique for analyzing energy depositions in TES sensors driven into saturation

    Directory of Open Access Journals (Sweden)

    B. Shank

    2014-11-01

    Full Text Available We present a detailed thermal and electrical model of superconducting transition edge sensors (TESs connected to quasiparticle (qp traps, such as the W TESs connected to Al qp traps used for CDMS (Cryogenic Dark Matter Search Ge and Si detectors. We show that this improved model, together with a straightforward time-domain optimal filter, can be used to analyze pulses well into the nonlinear saturation region and reconstruct absorbed energies with optimal energy resolution.

  17. Charging and exciton-mediated decharging of metal nanoparticles in organic semiconductor matrices

    International Nuclear Information System (INIS)

    Ligorio, Giovanni; Vittorio Nardi, Marco; Christodoulou, Christos; Florea, Ileana; Ersen, Ovidiu; Monteiro, Nicolas-Crespo; Brinkmann, Martin; Koch, Norbert

    2014-01-01

    Gold nanoparticles (Au-NPs) were deposited on the surface of n- and p-type organic semiconductors to form defined model systems for charge storage based electrically addressable memory elements. We used ultraviolet photoelectron spectroscopy to study the electronic properties and found that the Au-NPs become positively charged because of photoelectron emission, evidenced by spectral shifts to higher binding energy. Upon illumination with light that can be absorbed by the organic semiconductors, dynamic charge neutrality of the Au-NPs could be re-established through electron transfer from excitons. The light-controlled charge state of the Au-NPs could add optical addressability to memory elements

  18. Experimental techniques for characterising water in wood covering the range from dry to fully water-saturated

    DEFF Research Database (Denmark)

    Thybring, Emil Engelund; Kymäläinen, Maija; Rautkari, Lauri

    2018-01-01

    focuses on selected experimental techniques that can give deeper insights into various aspects of water in wood in the entire moisture domain from dry to fully water-saturated. These techniques fall into three broad categories: (1) gravimetric techniques that determine how much water is absorbed, (2...

  19. Oxalate: Effect on calcium absorbability

    International Nuclear Information System (INIS)

    Heaney, R.P.; Weaver, C.M.

    1989-01-01

    Absorption of calcium from intrinsically labeled Ca oxalate was measured in 18 normal women and compared with absorption of Ca from milk in these same subjects, both when the test substances were ingested in separate meals and when ingested together. Fractional Ca absorption from oxalate averaged 0.100 +/- 0.043 when ingested alone and 0.140 +/- 0.063 when ingested together with milk. Absorption was, as expected, substantially lower than absorption from milk (0.358 +/- 0.113). Nevertheless Ca oxalate absorbability in these women was higher than we had previously found for spinach Ca. When milk and Ca oxalate were ingested together, there was no interference of oxalate in milk Ca absorption and no evidence of tracer exchange between the two labeled Ca species

  20. Spectrophotometric measurement of calcium carbonate saturation states in seawater.

    Science.gov (United States)

    Easley, Regina A; Patsavas, Mark C; Byrne, Robert H; Liu, Xuewu; Feely, Richard A; Mathis, Jeremy T

    2013-02-05

    Measurements of ocean pH and carbonate ion concentrations in the North Pacific and Arctic Oceans were used to determine calcium carbonate saturation states (Ω(CaCO(3))) from spectrophotometric methods alone. Total carbonate ion concentrations, [CO(3)(2-)](T), were for the first time at sea directly measured using Pb(II) UV absorbance spectra. The basis of the method is given by the following: [formula see text] where (CO(3))β(1) is the PbCO(3)(0) formation constant, e(i) are molar absorptivity ratios, and R = (250)A/(234)A (ratio of absorbances measured at 250 and 234 nm). On the basis of shipboard and laboratory Pb(II) data and complementary carbon-system measurements, the experimental parameters were determined to be (25 °C) the following: [formula see text]. The resulting mean difference between the shipboard spectrophotometric and conventional determinations of [CO(3)(2-)](T) was ±2.03 μmol kg(-1). The shipboard analytical precision of the Pb(II) method was ∼1.71 μmol kg(-1) (2.28%). Spectrophotometric [CO(3)(2-)](T) and pH(T) were then combined to calculate Ω(CaCO(3)). For the case of aragonite, 95% of the spectrophotometric aragonite saturation states (Ω(Aspec)) were within ±0.06 of the conventionally calculated values (Ω(Acalc)) when 0.5 ≤ Ω(A) ≤ 2.0. When Ω(A) > 2.0, 95% of the Ω(Aspec) values were within ±0.18 of Ω(Acalc). Our shipboard experience indicates that spectrophotometric determinations of [CO(3)(2-)](T) and Ω(CaCO(3)) are straightforward, fast, and precise. The method yields high-quality measurements of two important, rapidly changing aspects of ocean chemistry and offers capabilities suitable for long-term automated in situ monitoring.

  1. Nonlinear propagation of strong-field THz pulses in doped semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2012-01-01

    We report on nonlinear propagation of single-cycle THz pulses with peak electric fields reaching 300 kV/cm in n-type semiconductors at room temperature. Dramatic THz saturable absorption effects are observed in GaAs, GaP, and Ge, which are caused by the nonlinear electron transport in THz fields....... The semiconductor conductivity, and hence the THz absorption, is modulated due to the acceleration of carriers in strong THz fields, leading to an increase of the effective mass of the electron population, as the electrons are redistributed from the low-momentum, low-effective-mass states to the high-momentum, high...

  2. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  3. An omnidirectional electromagnetic absorber made of metamaterials

    International Nuclear Information System (INIS)

    Cheng Qiang; Cui Tiejun; Jiang Weixiang; Cai Bengeng

    2010-01-01

    In a recent theoretical work by Narimanov and Kildishev (2009 Appl. Phys. Lett. 95 041106) an optical omnidirectional light absorber based on metamaterials was proposed, in which theoretical analysis and numerical simulations showed that all optical waves hitting the absorber are trapped and absorbed. Here we report the first experimental demonstration of an omnidirectional electromagnetic absorber in the microwave frequency. The proposed device is composed of non-resonant and resonant metamaterial structures, which can trap and absorb electromagnetic waves coming from all directions spirally inwards without any reflections due to the local control of electromagnetic fields. It is shown that the absorption rate can reach 99 per cent in the microwave frequency. The all-directional full absorption property makes the device behave like an 'electromagnetic black body', and the wave trapping and absorbing properties simulate, to some extent, an 'electromagnetic black hole.' We expect that such a device could be used as a thermal emitting source and to harvest electromagnetic waves.

  4. Femoral venous oxygen saturation is no surrogate for central venous oxygen saturation

    NARCIS (Netherlands)

    van Beest, Paul A.; van der Schors, Alice; Liefers, Henriëtte; Coenen, Ludo G. J.; Braam, Richard L.; Habib, Najib; Braber, Annemarije; Scheeren, Thomas W. L.; Kuiper, Michaël A.; Spronk, Peter E.

    2012-01-01

    Objective: The purpose of our study was to determine if central venous oxygen saturation and femoral venous oxygen saturation can be used interchangeably during surgery and in critically ill patients. Design: Prospective observational controlled study. Setting: Nonacademic university-affiliated

  5. Simulation of a silicon neutron detector coated with TiB2 absorber

    International Nuclear Information System (INIS)

    Krapohl, D; Nilsson, H-E; Petersson, S; Slavicek, T; Thungström, G; Pospisil, S

    2012-01-01

    Neutron radiation cannot be directly detected in semiconductor detectors and therefore needs converter layers. Planar clean-room processing can be used in the manufacturing process of semiconductor detectors with metal layers to produce a cost-effective device. We used the Geant4 Monte-Carlo toolkit to simulate the performance of a semiconductor neutron detector. A silicon photo-diode was coated with vapour deposited titanium, aluminium thin films and a titaniumdiboride (TiB 2 ) neutron absorber layer. The neutron capture reaction 10B(n, alpha)7Li is taken advantage of to create charged particles that can be counted. Boron-10 has a natural abundance of about SI 19.8%. The emitted alpha particles are absorbed in the underlying silicon detector. We varied the thickness of the converter layer and ran the simulation with a thermal neutron source in order to find the best efficiency of the TiB 2 converter layer and optimize the clean room process.

  6. Comments on liquid hydrogen absorbers for MICE

    International Nuclear Information System (INIS)

    Green, Michael A.

    2003-01-01

    This report describes the heat transfer problems associated with a liquid hydrogen absorber for the MICE experiment. This report describes a technique for modeling heat transfer from the outside world, to the absorber case and in its vacuum vessel, to the hydrogen and then into helium gas at 14 K. Also presented are the equation for free convection cooling of the liquid hydrogen in the absorber

  7. Multiband Negative Permittivity Metamaterials and Absorbers

    Directory of Open Access Journals (Sweden)

    Yiran Tian

    2013-01-01

    Full Text Available Design and characteristics of multiband negative permittivity metamaterial and its absorber configuration are presented in this paper. The proposed multiband metamaterial is composed of a novel multibranch resonator which can possess four electric resonance frequencies. It is shown that, by controlling the length of the main branches of such resonator, the resonant frequencies and corresponding absorbing bands of metamaterial absorber can be shifted in a large frequency band.

  8. Determination of saturation functions and wettability for chalk based on measured fluid saturations

    Energy Technology Data Exchange (ETDEWEB)

    Olsen, D.; Bech, N.; Moeller Nielsen, C.

    1998-08-01

    The end effect of displacement experiments on low permeable porous media is used for determination of relative permeability functions and capillary pressure functions. Saturation functions for a drainage process are determined from a primary drainage experiment. A reversal of the flooding direction creates an intrinsic imbibition process in the sample, which enables determination if imbibition saturation functions. The saturation functions are determined by a parameter estimation technique. Scanning effects are modelled by the method of Killough. Saturation profiles are determined by NMR. (au)

  9. Recipe for residual oil saturation determination

    Energy Technology Data Exchange (ETDEWEB)

    Guillory, A.J.; Kidwell, C.M.

    1979-01-01

    In 1978, Shell Oil Co., in conjunction with the US Department of Energy, conducted a residual oil saturation study in a deep, hot high-pressured Gulf Coast Reservoir. The work was conducted prior to initiation of CO/sub 2/ tertiary recovery pilot. Many problems had to be resolved prior to and during the residual oil saturation determination. The problems confronted are outlined such that the procedure can be used much like a cookbook in designing future studies in similar reservoirs. Primary discussion centers around planning and results of a log-inject-log operation used as a prime method to determine the residual oil saturation. Several independent methods were used to calculate the residual oil saturation in the subject well in an interval between 12,910 ft (3935 m) and 12,020 ft (3938 m). In general, these numbers were in good agreement and indicated a residual oil saturation between 22% and 24%. 10 references.

  10. X-ray image intensifier camera tubes and semiconductor targets

    International Nuclear Information System (INIS)

    1979-01-01

    A semiconductor target for use in an image intensifier camera tube and a camera using the target are described. The semiconductor wafer for converting an electron image onto electrical signal consists mainly of a collector region, preferably n-type silicon. It has one side for receiving the electron image and an opposite side for storing charge carriers generated in the collector region by high energy electrons forming a charge image. The first side comprises a highly doped surface layer covered with a metal buffer layer permeable to the incident electrons and thick enough to dissipate some of the incident electron energy thereby improving the signal-to-noise ratio. This layer comprises beryllium on niobium on the highly doped silicon surface zone. Low energy Kα X-ray radiation is generated in the first layer, the radiation generated in the second layer (mainly Lα radiation) is strongly absorbed in the silicon layer. A camera tube using such a target with a photocathode for converting an X-ray image into an electron image, means to project this image onto the first side of the semiconductor wafer and means to read out the charge pattern on the second side are also described. (U.K.)

  11. Preparation of super absorbent by irradiation polymerization

    International Nuclear Information System (INIS)

    Hua Fengjun; Tan Chunhong; Qian Mengping

    1995-01-01

    A kind of absorbent is prepared by gamma-rays irradiated by reversed-phase suspension polymerization. Drying particles have 1400 (g/g) absorbency in de-ionic water. Effects of reactive conditions, e.g.: dose-rate, dose, monomer concentration, degree of monomer neutralization and crosslinking agents on absorbency in de-ionic water are discussed. The cause of absorbing de-ionic water by polymer is related to its network structure and ionic equilibrium in particle. Accordingly, a suit reactive condition is chosen for preparation of hydro gel spheres

  12. Absorber rod drive for nuclear reactors

    International Nuclear Information System (INIS)

    Acher, H.

    1985-01-01

    The invention concerns a further addition to the invention of DE 33 42 830 A1. The free contact of the hollow piston with the nut due to hydraulic pressure is replaced by a hydraulic or spring attachment. The pressure system required to produce the hydraulic pressure is therefore omitted, and the electrical power required for driving the pump or the mass flow is also omitted. The absorber rod slotted along its longitudinal axis is replaced by an absorber rod, in the longitudinal axis of which a hollow piston is connected together with the absorber rod. This makes the absorber rod more stable, and assembly is simplified. (orig./HP) [de

  13. TPX/TFTR Neutral Beam energy absorbers

    International Nuclear Information System (INIS)

    Dahlgren, F.; Wright, K.; Kamperschroer, J.; Grisham, L.; Lontai, L.; Peters, C.; VonHalle, A.

    1993-01-01

    The present beam energy absorbing surfaces on the TFTR Neutral Beams such as Ion Dumps, Calorimeters, beam defining apertures, and scrapers, are simple water cooled copper plates which wee designed to absorb (via their thermal inertia) the incident beam power for two seconds with a five minute coal down interval between pulses. These components are not capable of absorbing the anticipated beam power loading for 1000 second TPX pulses and will have to be replaced with an actively cooled design. While several actively cooled energy absorbing designs were considered,, the hypervapotron elements currently being used on the JET beamlines were chosen due to their lower cooling water demands and reliable performance on JET

  14. Chalcopyrite semiconductors for quantum well solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Afshar, Maziar; Sadewasser, Sascha; Albert, Juergen; Lehmann, Sebastian; Abou-Ras, Daniel; Lux-Steiner, Martha C. [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Berlin (Germany); Marron, David Fuertes [Instituto de Energia Solar - ETSIT, Universidad Politecnica de Madrid, Ciudad Universitaria s.n., 28040 Madrid (Spain); Rockett, Angus A. [Department of Materials Science and Engineering, University of Illinois, 1304 W. Green Street, Urbana, IL 61801 (United States); Raesaenen, Esa [Nanoscience Center, Department of Physics University of Jyvaeskylae, FI-40014 Jyvaeskylae (Finland)

    2011-11-15

    The possibilities of using highly absorbing chalcopyrite semiconductors of the type Cu(In,Ga)Se{sub 2} in a quantum well solar cell structure are explored. Thin alternating layers of 50 nm CuInSe{sub 2} and CuGaSe{sub 2} were grown epitaxially on a GaAs(100) substrate. The optical properties of a resulting structure of three layers indicate charge carrier confinement in the low band gap CuInSe{sub 2} layer. By compositional analysis interdiffusion of In and Ga at the interfaces was found. The compositional profile was converted into a conduction-band diagram, for which the quantization of energy levels was numerically confirmed using the effective-mass approximation. The results provide a promising basis for the future development of chalcopyrite-type quantum well structures and their application, i.e. in quantum well solar cells. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Catalytic photooxidation of pentachlorophenol using semiconductor nanoclusters

    Energy Technology Data Exchange (ETDEWEB)

    WILCOXON,JESS P.

    2000-04-17

    Pentachlorophenol (PCP) is a toxic chlorinated aromatic molecule widely used as fungicide, a bactericide and a wood preservation, and thus ubiquitous in the environment. The authors report photo-oxidation of PCP using a variety of nanosize semiconductor metal oxides and sulfides in both aqueous and polar organic solvents and compare the photo-oxidation kinetics of these nanoclusters to widely studied bulk powders like Degussa P-25 TiO{sub 2} and CdS. They study both the light intensity dependence of PCP photooxidation for nanosize SnO{sub 2} and the size dependence of PCP photooxidation for both nanosize SnO{sub 2} and MoS{sub 2}. They find an extremely strong size dependence for the latter which they attribute to its size-dependent band gap and the associated change in redox potentials due to quantum confinement of the hole-electron pair. The authors show that nanosize MoS{sub 2} with a diameter of d=3.0 nm and an absorbance edge of {approximately}450 nm is a very effective photooxidation catalyst for complete PCP mineralization, even when using only visible light irradiation.

  16. Gaseous carbon dioxide absorbing column

    International Nuclear Information System (INIS)

    Harashina, Heihachi.

    1994-01-01

    The absorbing column of the present invention comprises a cyclone to which CO 2 gas and Ca(OH) 2 are blown to form CaCO 3 , a water supply means connected to an upper portion of the cyclone for forming a thin water membrane on the inner wall thereof, and a water processing means connected to a lower portion of the cyclone for draining water incorporating CaCO 3 . If a mixed fluid of CO 2 gas and Ca(OH) 2 is blown in a state where a flowing water membrane is formed on the inner wall of the cyclone, formation of CaCO 3 is promoted also in the inside of the cyclone in addition to the formation of CaCO 3 in the course of blowing. Then, formed CaCO 3 is discharged from the lower portion of the cyclone together with downwardly flowing water. With such procedures, solid contents such as CaCO 3 separated at the inner circumferential wall are sent into the thin water membrane, adsorbed and captured, and the solid contents are successively washed out, so that a phenomenon that the solid contents deposit and grow on the inner wall of the cyclone can be prevented effectively. (T.M.)

  17. Radiation absorbed doses in cephalography

    International Nuclear Information System (INIS)

    Eliasson, S.; Julin, P.; Richter, S.; Stenstroem, B.

    1984-01-01

    Radiation absorbed doses to different organs in the head and neck region in lateral (LAT) and postero-anterior (PA) cephalography were investigated. The doses were measured by thermoluminescence dosimeters (TLD) on a tissue equivalent phantom head. Lanthanide screens in speed group 4 were used at 90 and 85 k Vp. A near-focus aluminium dodger was used and the radiation beam was collimated strictly to the face. The maximum entrance dose from LAT was 0.25 mGy and 0.42 mGy from a PA exposure. The doses to the salivary glands ranged between 0.2 and 0.02 mGy at LAT and between 0.15 and 0.04 mGy at PA exposures. The average thyroid gland dose without any shielding was 0.11 mGy (LAT) and 0.06 mGy (PA). When a dodger was used the dose was reduced to 0.07 mGy (LAT). If the thyroid gland was sheilded off, the dose was further reduced to 0.01 mGy and if the thyroid region was collimated out of the primary radiation field the dose was reduced to only 0.005 mGy. (authors)

  18. Simulation of semiconductor devices

    International Nuclear Information System (INIS)

    Oriato, D.

    2001-09-01

    In this thesis a drift diffusion model coupled with self-consistent solutions of Poisson's and Schroedinger's equations, is developed and used to investigate the operation of Gunn diodes and GaN-based LEDs. The model also includes parameters derived from Monte Carlo calculations of the simulated devices. In this way the characteristics of a Monte Carlo approach and of a quantum solver are built into a fast and flexible drift-diffusion model that can be used for testing a large number of heterostructure designs in a time-effective way. The full model and its numerical implementation are described in chapter 2. In chapter 3 the theory of Gunn diodes is presented. A basic model of the dynamics of domain formation and domain transport is described with particular regard to accumulation and dipole domains. Several modes of operation of the Gunn device are described, varying from the resonance mode to the quenched mode. Details about transferred electron devices and negative differential resistance in semiconductor materials are given. In chapter 4 results from the simulation of a simple conventional gunn device confirm the importance of the doping condition at the cathode. Accumulation or dipole domains are achieved respectively with high and low doping densities. The limits of a conventional Gunn diode are explained and solved by introducing the heterostructure Gunn diode. This new design consists of a conventional GaAs transit region coupled with an electron launcher at the cathode, made using an AIGaAs heterostructure step. Simulations show the importance of the insertion of a thin highly-doped layer between the transit region and the electron launcher in order to improve device operation. Chapter 5 is an introduction to Ill-nitrides, in particular GaN and its alloy ln-GaN. We outline the discrepancy in the elastic and piezoelectric parameters found in the literature. Strain, dislocations and piezoelectricity are presented as the main features of a InGaN/GaN system

  19. High pressure semiconductor physics I

    CERN Document Server

    Willardson, R K; Paul, William; Suski, Tadeusz

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tra...

  20. Introduction to cathodoluminescence in semiconductors

    International Nuclear Information System (INIS)

    Dussac, M.

    1985-01-01

    The use of cathodoluminescence in a scanning electron microscope leads to acquire a spectrum in a place of the sample surface, or to register the intensity profile of a special emission band along a scanning line, or also to realize a map of the irradiated sample. Composition variations can then, at ambient temperature, be determined, also defects can be shown, together with grain joints and dislocations, radiative and non radiative regions can be distinguished and, at low temperature, elementary processes of luminescence can be studied and impurities identified in semiconductors. Through this analysis method is applicable to every insulating or semiconductor material (that is to say to every material having a gap), in this article only crystalline semi-conductor will be studied [fr

  1. Catalysts, Protection Layers, and Semiconductors

    DEFF Research Database (Denmark)

    Chorkendorff, Ib

    2015-01-01

    Hydrogen is the simplest solar fuel to produce and in this presentation we shall give a short overview of the pros and cons of various tandem devices [1]. The large band gap semiconductor needs to be in front, but apart from that we can chose to have either the anode in front or back using either...... acid or alkaline conditions. Since most relevant semiconductors are very prone to corrosion the advantage of using buried junctions and using protection layers offering shall be discussed [2-4]. Next we shall discuss the availability of various catalysts for being coupled to these protections layers...... and how their stability may be evaluated [5, 6]. Examples of half-cell reaction using protection layers for both cathode and anode will be discussed though some of recent examples under both alkaline and acidic conditions. Si is a very good low band gap semiconductor and by using TiO2 as a protection...

  2. High mobility emissive organic semiconductor

    Science.gov (United States)

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

  3. Thiophene-Based Organic Semiconductors.

    Science.gov (United States)

    Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

    2017-10-24

    Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

  4. Assessing species saturation: conceptual and methodological challenges.

    Science.gov (United States)

    Olivares, Ingrid; Karger, Dirk N; Kessler, Michael

    2018-05-07

    Is there a maximum number of species that can coexist? Intuitively, we assume an upper limit to the number of species in a given assemblage, or that a lineage can produce, but defining and testing this limit has proven problematic. Herein, we first outline seven general challenges of studies on species saturation, most of which are independent of the actual method used to assess saturation. Among these are the challenge of defining saturation conceptually and operationally, the importance of setting an appropriate referential system, and the need to discriminate among patterns, processes and mechanisms. Second, we list and discuss the methodological approaches that have been used to study species saturation. These approaches vary in time and spatial scales, and in the variables and assumptions needed to assess saturation. We argue that assessing species saturation is possible, but that many studies conducted to date have conceptual and methodological flaws that prevent us from currently attaining a good idea of the occurrence of species saturation. © 2018 Cambridge Philosophical Society.

  5. Organic semiconductors in sensor applications

    CERN Document Server

    Malliaras, George; Owens, Róisín

    2008-01-01

    Organic semiconductors offer unique characteristics such as tunability of electronic properties via chemical synthesis, compatibility with mechanically flexible substrates, low-cost manufacturing, and facile integration with chemical and biological functionalities. These characteristics have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this rapidly emerging field by discussing both optical and electrical sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques to enhance specificity are outlined, and models for the sensor response are described.

  6. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  7. Introduction to semiconductor manufacturing technology

    CERN Document Server

    2012-01-01

    IC chip manufacturing processes, such as photolithography, etch, CVD, PVD, CMP, ion implantation, RTP, inspection, and metrology, are complex methods that draw upon many disciplines. [i]Introduction to Semiconductor Manufacturing Technologies, Second Edition[/i] thoroughly describes the complicated processes with minimal mathematics, chemistry, and physics; it covers advanced concepts while keeping the contents accessible to readers without advanced degrees. Designed as a textbook for college students, this book provides a realistic picture of the semiconductor industry and an in-depth discuss

  8. Wide gap semiconductor microwave devices

    International Nuclear Information System (INIS)

    Buniatyan, V V; Aroutiounian, V M

    2007-01-01

    A review of properties of wide gap semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, GaN and AlGaN/GaN that are relevant to electronic, optoelectronic and microwave applications is presented. We discuss the latest situation and perspectives based on experimental and theoretical results obtained for wide gap semiconductor devices. Parameters are taken from the literature and from some of our theoretical works. The correspondence between theoretical results and parameters of devices is critically analysed. (review article)

  9. Detection of radioactivity by semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1991-01-01

    The class of detectors discussed in this chapter has a responsive component involving a diode, a junction between two types of semiconductor materials. Although diode detectors are not particularly efficient in counting radioactive emissions, they are superior to other commercially available detectors in spectroscopy. Consequently, diode detectors are used extensively for quanlitative purposes and for quantitative purposes when mixtures of radionuclides are present, not the usual situation with biological or medical research. Topics addressed in this chapter are as follows: Band Theory; Semiconductors and Junctions; and Radiation Detectors. 6 refs., 14 figs

  10. Modeling of semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  11. Semiconductor X-ray spectrometers

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1978-02-01

    An outline is given of recent developments in particle and photon induced x-ray fluorescence (XRF) analysis. Following a brief description of the basic mechanism of semiconductor detector operation a comparison is made between semiconductor detectors, scintillators and gas filled proportional devices. Detector fabrication and cryostat design are described in more detail and the effects of various device parameters on system performance, such as energy resolution, count rate capability, efficiency, microphony, etc. are discussed. The main applications of these detectors in x-ray fluorescence analysis, electron microprobe analysis, medical and pollution studies are reviewed

  12. Integrating magnetism into semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Zakharchenya, Boris P; Korenev, Vladimir L [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2005-06-30

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  13. Integrating magnetism into semiconductor electronics

    International Nuclear Information System (INIS)

    Zakharchenya, Boris P; Korenev, Vladimir L

    2005-01-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  14. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  15. Absorption and refractive index dynamics in waveguide semiconductor electroabsorbers

    DEFF Research Database (Denmark)

    Romstad, Francis Pascal

    2002-01-01

    in telecommunication systems.Both the amplitude and phase transfer functions of electroabsorption modulators as function of reverse bias and wavelength, are measured using a heterodyne detection technique. With this information, the bias and wavelength dependent áH-parameter is calculated and so......, that the fabricated electroabsorption modulators can generate high quality pulses for optical fiber transmission. The all-optical wavelength conversion and demultiplexing capabilities of the electroabsorbers, when operated as saturable absorbers, are investigated using femtosecond laser pulses in an amplitude...

  16. Amorphous chalcogenide semiconductors for solid state dosimetric systems of high-energetic ionizing radiation

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O. [Pedagogical University, Czestochowa (Poland)]|[Institute of Materials, Lvov (Ukraine)

    1997-12-31

    The application possibilities of amorphous chalcogenide semiconductors use as radiation-sensitive elements of high-energetic (E > 1 MeV) dosimetric systems are analysed. It is shown that investigated materials are characterized by more wide region of registered absorbed doses and low temperature threshold of radiation information bleaching in comparison with well-known analogies based on coloring oxide glasses. (author). 16 refs, 1 tab.

  17. Slow light in a semiconductor waveguide for true-time delay applications in microwave photonics

    DEFF Research Database (Denmark)

    Öhman, Filip; Yvind, Kresten; Mørk, Jesper

    2007-01-01

    We have investigated the slowand fast light properties of a semiconductor waveguide device employing concatenated gain and absorber sections. This letter presents the experimental results as well as theoretical modeling. A large phase shift of 110 and a true-time delay of more than 150 ps are dem...... are demonstrated. The combination of amplitude and phase control of the modulated signal shows great promise for applications within microwave photonics....

  18. Absorbing Property of Multi-layered Short Carbon Fiber Absorbing Coating

    OpenAIRE

    Liu, Zhaohui; Tao, Rui; Ban, Guodong; Luo, Ping

    2018-01-01

    The radar absorbing coating was prepared with short carbon fiber asabsorbent and waterborne polyurethane (WPU) as matrix resin. The coating’s absorbing property was tested with vectornetwork analyzer, using aramid honeycomb as air layer which was matched withcarbon fiber coating. The results demonstrate that the single-layered carbonfiber absorbing coating presented relatively poor absorbing property when thelayer was thin, and the performance was slightly improved after the matched airlayer ...

  19. Absorber element for fast breeder reactor

    International Nuclear Information System (INIS)

    Verset, L.

    1987-01-01

    This absorber element is characterized by a new head which avoids an accident disconnection of the mobil absorber. This head is made by a superior piece which can take shore up an adjusting ring on an adjusting bearing on the inferior piece. The intermediate piece is catched at the superior piece by a link of chain [fr

  20. Analysis of absorbing times of quantum walks

    International Nuclear Information System (INIS)

    Yamasaki, Tomohiro; Kobayashi, Hirotada; Imai, Hiroshi

    2003-01-01

    Quantum walks are expected to provide useful algorithmic tools for quantum computation. This paper introduces absorbing probability and time of quantum walks and gives both numerical simulation results and theoretical analyses on Hadamard walks on the line and symmetric walks on the hypercube from the viewpoint of absorbing probability and time

  1. Absorber transmissivities in 57Fe Moessbauer spectroscopy

    International Nuclear Information System (INIS)

    Ballet, O.

    1985-01-01

    Some useful relations are derived for the polarization dependent optical index of 57 Fe Moessbauer absorbers. Real rotation matrices are extensively used and, besides wave-direction dependence, their properties simplify also the treatment of texture and f-anisotropy. The derivation of absorber transmissivities from the optical index is discussed with a special emphasis on line overlapping. (Auth.)

  2. Photoreduction of carbon dioxide and water into formaldehyde and methanol on semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Aurian-Blajeni, B; Halmann, M; Manassen, J

    1980-01-01

    Heterogeneous photoassisted reduction of aqueous carbon dioxide was achieved using semiconductor powders, with either high-pressure Hg-lamps or sunlight as energy sources. The products were methanol, formaldehyde and methane. The reaction was carried out either as a gas-solid process, by passing carbon dioxide and water vapor over illuminated semiconductor surfaces, or as a liquid-solid reaction, by illuminating aqueous suspensions of semiconductor powders through which carbon dioxide was bubbled. Best results, under illumination by Hg-lamps, were obtained with aqueous suspensions of strontium titanate, SrTiO3, tungsten oxide, WO3, and titanium oxide, TiO2, resulting in absorbed energy conversion efficiencies of 6, 5.9 and 1.2 per cent, respectively.

  3. Saturation and forward jets at HERA

    International Nuclear Information System (INIS)

    Marquet, C.; Peschanski, R.; Royon, C.

    2004-01-01

    We analyse forward-jet production at HERA in the framework of the Golec-Biernat and Wusthoff saturation models. We obtain a good description of the forward-jet cross-sections measured by the H1 and ZEUS Collaborations in the two-hard-scale region (k T∼ Q >> Λ QCD ) with two different parametrizations with either significant or weak saturation effects. The weak saturation parametrization gives a scale compatible with the one found for the proton structure function F2. We argue that Mueller-Navelet jets at the Tevatron and the LHC could help distinguishing between both options

  4. Scintillation probe with photomultiplier tube saturation indicator

    International Nuclear Information System (INIS)

    Ruch, J.F.; Urban, D.J.

    1996-01-01

    A photomultiplier tube saturation indicator is formed by supplying a supplemental light source, typically an light emitting diode (LED), adjacent to the photomultiplier tube. A switch allows the light source to be activated. The light is forwarded to the photomultiplier tube by an optical fiber. If the probe is properly light tight, then a meter attached to the indicator will register the light from the LED. If the probe is no longer light tight, and the saturation indicator is saturated, no signal will be registered when the LED is activated. 2 figs

  5. Waveguide based external cavity semiconductor lasers

    NARCIS (Netherlands)

    Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

    2012-01-01

    We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

  6. Influence of phonons on semiconductor quantum emission

    Energy Technology Data Exchange (ETDEWEB)

    Feldtmann, Thomas

    2009-07-06

    A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semiconductor systems is presented. The theory is applied to study quantum dots and phonon-assisted luminescence in bulk semiconductors and heterostructures. (orig.)

  7. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  8. Fundamentals of semiconductors physics and materials properties

    CERN Document Server

    Yu, Peter Y

    2005-01-01

    Provides detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. This textbook emphasizes understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors and features an extensive collection of tables of material parameters, figures, and problems.

  9. Novel multi-chromophor light absorber concepts for DSSCs for efficient electron injection

    Energy Technology Data Exchange (ETDEWEB)

    Schuetz, Robert; Strothkaemper, Christian; Bartelt, Andreas; Hannappel, Thomas; Eichberger, Rainer [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Fasting, Carlo [Institut fuer Organische Chemie, Freie Universitaet Berlin, Takustrasse 3, 14195 Berlin (Germany); Thomas, Inara [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Institut fuer Organische Chemie, Freie Universitaet Berlin, Takustrasse 3, 14195 Berlin (Germany)

    2011-07-01

    Dye sensitized solar cells (DSSCs) operate by injecting electrons from the excited state of a light-harvesting dye into the continuum of conduction band states of a wide bandgap semiconductor. The light harvesting efficiency of pure organic dyes is limited by a narrow spectral electronic transition. A beneficial broad ground state absorption in the VIS region can be achieved by applying a single molecular dye system with multiple chromophors involving a Foerster resonance energy transfer (FRET) mechanism for an efficient electron injection. A model donor acceptor dye system capable for FRET chemically linked to colloidal TiO{sub 2} and ZnO nanorod surfaces was investigated in UHV environment. We used VIS/NIR femtosecond transient absorption spectroscopy and optical pump terahertz probe spectroscopy to study the charge injection dynamics of the antenna system. Different chromophors attached to a novel scaffold/anchor system connecting the organic absorber unit to the metal oxide semiconductor were probed.

  10. Liquid absorber experiments in ZED-2

    International Nuclear Information System (INIS)

    McDonnell, F.N.

    1975-07-01

    A set of liquid absorber experiments was performed in ZED-2 to provide data with which to test the adequacy of calculational methods for zone controller and refuelling studies associated with advanced reactor concepts. The absorber consisted of a full length aluminum tube, containing either i)H 2 O, ii)H 2 O + boron (2.5 mg/ml) or iii)H 2 O + boron (8.0 mg/ml). The tube was suspended vertically at interstitial or in-channel locations. A U-tube absorber was also simulated using two absorber tubes with appropriate spacers. Experiments were carried out at two different square lattice pitches, 22.86 and 27.94 cm. Measurements were made of the reactivity effects of the absorbers and, in some cases, of the detailed flux distribution near the perturbation. The results from one calculational method, the source-sink approach, were compared with the data from selected experiments. (author)

  11. Nuclear radiation detection by a variband semiconductor

    International Nuclear Information System (INIS)

    Volkov, A.S.

    1981-01-01

    Possibilities of using a variband semiconductor for detecting nuclear radiations are considered. It is shown that the variaband quasielectric field effectively collects charges induced by a nuclear particle only at a small mean free path in the semiconductor (up to 100 μm), the luminescence spectrum of the variband semiconductor when a nuclear particle gets into it, in principle, permits to determine both the energy and mean free path in the semiconductor (even at large mean free paths) [ru

  12. Laser semiconductor diode integrated with frequency doubler

    International Nuclear Information System (INIS)

    Tighineanu, I.; Dorogan, V.; Suruceanu, G.

    2003-01-01

    The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

  13. Diode having trenches in a semiconductor region

    Energy Technology Data Exchange (ETDEWEB)

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  14. Characterization of saturation of CR-39 detector at high alpha-particle fluence

    Directory of Open Access Journals (Sweden)

    M. El Ghazaly

    2018-04-01

    Full Text Available The occurrence of saturation in the CR-39 detector reduces and limits its detection dynamic range; nevertheless, this range could be extended using spectroscopic techniques and by measuring the net bulk rate of the saturated CR-39 detector surface. CR-39 detectors were irradiated by 1.5 MeV high alpha-particle fluence varying from 0.06 × 108 to 7.36 × 108 alphas/cm2 from Am-241 source; thereafter, they were etched in a 6.25N NaOH solution at a temperature of 70°C for different durations. Net bulk etch rate measurement of the 1.5 MeV alpha-irradiated CR-39 detector surface revealed that rate increases with increasing etching time and reaches its maximum value at the end of the alpha-particle range. It is also correlated with the alpha-particle fluence. The measurements of UV–Visible (UV–Vis absorbance at 500 and 600 nm reveal that the absorbance is linearly correlated with the fluence of alpha particles at the etching times of 2 and 4 hour. For extended etching times of 6, 10, and 14.5 hour, the absorbance is saturated for fluence values of 4.05 × 108, 5.30 × 108, and 7.36 × 108 alphas/cm2. These new methods pave the way to extend the dynamic range of polymer-based solid state nuclear track detectors (SSNTDs in measurement of high fluence of heavy ions as well as in radiation dosimetry. Keywords: Alpha Particle, Bulk Etch Rate, CR-39 Detector, Saturated Regime, UV–Vis Spectroscopy

  15. Automation and Integration in Semiconductor Manufacturing

    OpenAIRE

    Liao, Da-Yin

    2010-01-01

    Semiconductor automation originates from the prevention and avoidance of frauds in daily fab operations. As semiconductor technology and business continuously advance and grow, manufacturing systems must aggressively evolve to meet the changing technical and business requirements in this industry. Semiconductor manufacturing has been suffering pains from islands of automation. The problems associated with these systems are limited

  16. Semiconductor nanostructures for infrared applications

    NARCIS (Netherlands)

    Zurauskiene, N.; Asmontas, S.; Dargys, A.; Kundrotas, J.; Janssen, G.; Goovaerts, E.; Marcinkevicius, S.; Koenraad, P.M.; Wolter, J.H.; Leon, R.

    2004-01-01

    We present the results of time-resolved photoluminescence (TRPL) and optically detected microwave resonance (ODMR) spectroscopy investigations of semiconductor quantum dots and quantum wells. The ODMR spectra of InAs/GaAs QDs were detected via modulation of the total intensity of the QDs emission

  17. A Brief History of ... Semiconductors

    Science.gov (United States)

    Jenkins, Tudor

    2005-01-01

    The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

  18. Semiconductor radiation detectors: device physics

    National Research Council Canada - National Science Library

    Lutz, Gerhard

    1999-01-01

    ..., including nuclear physics, elementary particle physics, optical and x-ray astronomy, medicine, and materials testing - and the number of applications is growing continually. Closely related, and initiated by the application of semiconductors, is the development of low-noise low-power integrated electronics for signal readout. The success of semicond...

  19. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

    2000-01-01

    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

  20. Ultrafast Spectroscopy of Semiconductor Devices

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Hvam, Jørn Marcher

    1999-01-01

    In this work we present an experimental technique for investigating ultrafast carrier dynamics in semiconductor optical amplifiers at room temperature. These dynamics, influenced by carrier heating, spectral hole-burning and two-photon absorption, are very important for device applications in inf...

  1. Radiation damage in semiconductor detectors

    International Nuclear Information System (INIS)

    Kraner, H.W.

    1981-12-01

    A survey is presented of the important damage-producing interactions in semiconductor detectors and estimates of defect numbers are made for MeV protons, neutrons and electrons. Damage effects of fast neutrons in germanium gamma ray spectrometers are given in some detail. General effects in silicon detectors are discussed and damage constants and their relationship to leakage current is introduced

  2. Design of a nonlinear torsional vibration absorber

    Science.gov (United States)

    Tahir, Ammaar Bin

    Tuned mass dampers (TMD) utilizing linear spring mechanisms to mitigate destructive vibrations are commonly used in practice. A TMD is usually tuned for a specific resonant frequency or an operating frequency of a system. Recently, nonlinear vibration absorbers attracted attention of researchers due to some potential advantages they possess over the TMDs. The nonlinear vibration absorber, or the nonlinear energy sink (NES), has an advantage of being effective over a broad range of excitation frequencies, which makes it more suitable for systems with several resonant frequencies, or for a system with varying excitation frequency. Vibration dissipation mechanism in an NES is passive and ensures that there is no energy backflow to the primary system. In this study, an experimental setup of a rotational system has been designed for validation of the concept of nonlinear torsional vibration absorber with geometrically induced cubic stiffness nonlinearity. Dimensions of the primary system have been optimized so as to get the first natural frequency of the system to be fairly low. This was done in order to excite the dynamic system for torsional vibration response by the available motor. Experiments have been performed to obtain the modal parameters of the system. Based on the obtained modal parameters, the design optimization of the nonlinear torsional vibration absorber was carried out using an equivalent 2-DOF modal model. The optimality criterion was chosen to be maximization of energy dissipation in the nonlinear absorber attached to the equivalent 2-DOF system. The optimized design parameters of the nonlinear absorber were tested on the original 5-DOF system numerically. A comparison was made between the performance of linear and nonlinear absorbers using the numerical models. The comparison showed the superiority of the nonlinear absorber over its linear counterpart for the given set of primary system parameters as the vibration energy dissipation in the former is

  3. Minimum K_2,3-saturated Graphs

    OpenAIRE

    Chen, Ya-Chen

    2010-01-01

    A graph is K_{2,3}-saturated if it has no subgraph isomorphic to K_{2,3}, but does contain a K_{2,3} after the addition of any new edge. We prove that the minimum number of edges in a K_{2,3}-saturated graph on n >= 5 vertices is sat(n, K_{2,3}) = 2n - 3.

  4. Method of absorbing UF6 from gaseous mixtures in alkamine absorbents

    International Nuclear Information System (INIS)

    Lafferty, R.H.; Smiley, S.H.; Radimer, K.J.

    1976-01-01

    A method is described for recovering UF 6 from gaseous mixtures by absorption in a liquid. The liquid absorbent must have a relatively low viscosity and at least one component of the absorbent is an alkamine having less than 3 carbon atoms bonded to the amino nitrogen, less than 2 of the carbon atoms other than those bonded to the amino nitrogen are free of the hydroxy radical and precipitate the absorbed uranium from the absorbent. At least one component of the absorbent is chosen from the group consisting of ethanolamine, diethanolamine, and 3-methyl-3-amino-propane-diol-1,2

  5. Transient photoconductivity in amorphous semiconductors

    International Nuclear Information System (INIS)

    Mpawenayo, P.

    1997-07-01

    Localized states in amorphous semiconductors are divided in disorder induced shallow trap levels and dangling bonds deep states. Dangling bonds are assumed here to be either neutral or charged and their energy distribution is a single gaussian. Here, it is shown analytically that transient photocurrent in amorphous semiconductors is fully controlled by charge carriers transitions between localized states for one part and tunneling hopping carriers on the other. Localized dangling bonds deep states act as non radiative recombination centres, while hopping tunnelling is assisted by the Coulomb interaction between defects sites. The half-width of defects distribution is the disorder parameter that determines the carrier hopping time between defects sites. The macroscopic time that explains the long decay response times observed will all types of amorphous semiconductors is duly thought to be temperature dependent. Basic equations developed by Longeaud and Kleider are solved for the general case of a semiconductor after photo-generation. It turns out that the transient photoconductivity decay has two components; one with short response times from carriers trap-release transitions between shallow levels and extended states and a hopping component made of inter-dependent exponentials whose time constants span in larger ranges depending on disorder. The photoconductivity hopping component appears as an additional term to be added to photocurrents derived from existing models. The results of the present study explain and complete the power law decay derived in the multiple trapping models developed 20 years ago only in the approximation of the short response time regime. The long response time regime is described by the hopping macroscopic time. The present model is verified for all samples of amorphous semiconductors known so far. Finally, it is proposed to improved the modulated photoconductivity calculation techniques by including the long-lasting hopping dark documents

  6. Coexistence effect of UVA absorbers to increase their solubility and stability of supersaturation.

    Science.gov (United States)

    Endo, M; Mukawa, T; Sato, N; Maezawa, D; Ohtsu, Y; Kuroda, A; Wakabayashi, M; Asakura, K

    2014-12-01

    Sunscreens containing UVA absorbers in high concentrations are expected to be developed, since recent studies have suggested the possibility of involvement of UVA ray in skin cancer and early skin aging. Solubility and stability of supersaturation of UVA absorbers in UVB absorber were determined in the absence and the presence of cosmetic oil. Coexistence effect of UVA absorbers was analyzed to dissolve them in high concentrations. Two UVA absorbers, diethylamino hydroxybenzoyl hexyl benzoate (DHHB) and butyl methoxydibenzoylmethane (BMDM), a UVB absorber, 2-ethylhexyl methoxycinnamate (EHMC), and a cosmetic oil, 2-ethylhexyl ester of oligomer of hydroxystearic acid (EH-O-HSA), were used. Their solutions were prepared at 80°C and cooled to 5°C. The solid DHHB and/or BMDM were added to it, and the time evolution of concentrations of the UVA absorbers in the solution phase was monitored. At the saturation in the absence of EH-O-HSA at 5°C, weight ratio of DHHB and BMDM to EHMC was 0.39/1.00 and 0.22/1.00, respectively. Addition of EH-O-HSA slightly changed the solubility of DHHB and BMDM. When the weight ratio of EH-O-HSA to EHMC was 0.20/1.00, weight ratio of DHHB and BMDM to EHMC was 0.35/1.00 and 0.25/1.00, respectively at the saturation at 5°C. In the presence of EH-O-HSA, a strong coexistence effect of DHHB and BMDM was found on their solubility. A thermodynamically stable saturated solution at 5°C having the composition that DHHB: BMDM: EHMC: EH-O-HSA = 0.47: 0.46: 1.00: 0.20 was obtained by the simultaneous addition of solid DHHB and BMDM into the initial solution. The solution type composite having the highest concentrations of DHHB and BMDM prepared in this study exhibited critical wavelength at 368 nm that was just below the border for sunscreens being qualified as 'Broad Spectrum' protection under the new rule launched by US FDA. © 2014 Society of Cosmetic Scientists and the Société Française de Cosmétologie.

  7. On the definition of absorbed dose

    International Nuclear Information System (INIS)

    Grusell, Erik

    2015-01-01

    Purpose: The quantity absorbed dose is used extensively in all areas concerning the interaction of ionizing radiation with biological organisms, as well as with matter in general. The most recent and authoritative definition of absorbed dose is given by the International Commission on Radiation Units and Measurements (ICRU) in ICRU Report 85. However, that definition is incomplete. The purpose of the present work is to give a rigorous definition of absorbed dose. Methods: Absorbed dose is defined in terms of the random variable specific energy imparted. A random variable is a mathematical function, and it cannot be defined without specifying its domain of definition which is a probability space. This is not done in report 85 by the ICRU, mentioned above. Results: In the present work a definition of a suitable probability space is given, so that a rigorous definition of absorbed dose is possible. This necessarily includes the specification of the experiment which the probability space describes. In this case this is an irradiation, which is specified by the initial particles released and by the material objects which can interact with the radiation. Some consequences are discussed. Specific energy imparted is defined for a volume, and the definition of absorbed dose as a point function involves the specific energy imparted for a small mass contained in a volume surrounding the point. A possible more precise definition of this volume is suggested and discussed. Conclusions: The importance of absorbed dose motivates a proper definition, and one is given in the present work. No rigorous definition has been presented before. - Highlights: • A stringent definition of absorbed dose is given. • This requires the definition of an irradiation and a suitable probability space. • A stringent definition is important for an understanding of the concept absorbed dose

  8. Estimation of Absorbed Dose in Occlusal Radiography

    International Nuclear Information System (INIS)

    Yoo, Young Ah; Choi, Karp Shick; Lee, Sang Han

    1990-01-01

    The purpose of this study was to estimate absorbed dose of each important anatomic site of phantom (RT-210 Head and Neck Section R, Humanoid Systems Co., U.S.A.) head in occlusal radiography. X-radiation dosimetry at 12 anatomic sites in maxillary anterior topography, maxillary posterior topography, mandibular anterior cross-section, mandibular posterior cross-section, mandibular anterior topographic, mandibular posterior topographic occlusal projection was performed with calcium sulfate thermoluminescent dosimeters under 70 Kvp and 15 mA, 1/4 second (8 inch cone ) and 1 second (16 inch cone) exposure time. The results obtained were as follows: Skin surface produced highest absorbed dose ranged between 3264 mrad and 4073 mrad but there was little difference between projections. In maxillary anterior topographic occlusal radiography, eyeballs, maxillary sinuses, and pituitary gland sites produced higher absorbed doses than those of other sites. In maxillary posterior topographic occlusal radiography, exposed eyeball site and exposed maxillary sinus site produced high absorbed doses. In mandibular anterior cross-sectional occlusal radiography, all sites were produced relatively low absorbed dose except eyeball sites. In Mandibular posterior cross-sectional occlusal radiography, exposed eyeball site and exposed maxillary sinus site were produced relatively higher absorbed doses than other sites. In mandibular anterior topographic occlusal radiography, maxillary sinuses, submandibular glands, and thyroid gland sites produced high absorbed doses than other sites. In mandibular posterior topographic occlusal radiography, submandibular gland site of the exposed side produced high absorbed dose than other sites and eyeball site of the opposite side produced relatively high absorbed dose.

  9. Ultra-thin, conformal, and hydratable color-absorbers using silk protein hydrogel

    Science.gov (United States)

    Umar, Muhammad; Min, Kyungtaek; Jo, Minsik; Kim, Sunghwan

    2018-06-01

    Planar and multilayered photonic devices offer unprecedented opportunities in biological and chemical sensing due to strong light-matter interactions. However, uses of rigid substances such as semiconductors and dielectrics confront photonic devices with issues of biocompatibility and a mechanical mismatch for their application on humid, uneven, and soft biological surfaces. Here, we report that favorable material traits of natural silk protein led to the fabrication of an ultra-thin, conformal, and water-permeable (hydratable) metal-insulator-metal (MIM) color absorber that was mapped on soft, curved, and hydrated biological interfaces. Strong absorption was induced in the MIM structure and could be tuned by hydration and tilting of the sample. The transferred MIM color absorbers reached the exhibition of a very strong resonant absorption in the visible and near infra-red ranges. In addition, we demonstrated that the conformal resonator could function as a refractometric glucose sensor applied on a contact lens.

  10. Energy Absorbing Effectiveness – Different Approaches

    Directory of Open Access Journals (Sweden)

    Kotełko Maria

    2018-03-01

    Full Text Available In the paper the study of different crashworthiness indicators used to evaluate energy absorbing effectiveness of thin-walled energy absorbers is presented. Several different indicators are used to assess an effectiveness of two types of absorbing structures, namely thin-walled prismatic column with flaws and thin-walled prismatic frustum (hollow or foam filled in both cases subjected to axial compressive impact load. The indicators are calculated for different materials and different geometrical parameters. The problem of selection of the most appropriate and general indicators is discussed.

  11. Graphene and Graphene Metamaterials for Terahertz Absorbers

    DEFF Research Database (Denmark)

    Andryieuski, Andrei; Pizzocchero, Filippo; Booth, Tim

    2013-01-01

    Graphene, due to the possibility to tune its conductivity, is the promising material for a range of the terahertz (THz) applications, such as tunable reflectors, absorbers, modulators, filters and polarization converters. Subwavelength structuring of graphene in order to form metamaterials allows...... for even more control over the THz waves. In this poster presentation I will show an elegant way to describe the graphene metamaterials and the design of graphene based absorbers. I will also present our recent experimental results on the graphene absorbers characterization....

  12. Porphyrin Based Near Infrared-Absorbing Materials for Organic Photovoltaics

    Science.gov (United States)

    Zhong, Qiwen

    The conservation and transformation of energy is essential to the survival of mankind, and thus concerns every modern society. Solar energy, as an everlasting source of energy, holds one of the key solutions to some of the most urgent problems the world now faces, such as global warming and the oil crisis. Advances in technologies utilizing clean, abundant solar energy, could be the steering wheel of our societies. Solar cells, one of the major advances in converting solar energy into electricity, are now capturing people's interest all over the globe. While solar cells have been commercially available for many years, the manufacturing of solar cells is quite expensive, limiting their broad based implementation. The cost of solar cell based electricity is 15-50 cents per kilowatt hour (¢/kwh), depending on the type of solar cell, compared to 0.7 ¢/kwh for fossil fuel based electricity. Clearly, decreasing the cost of electricity from solar cells is critical for their wide spread deployment. This will require a decrease in the cost of light absorbing materials and material processing used in fabricating the cells. Organic photovoltaics (OPVs) utilize organic materials such as polymers and small molecules. These devices have the advantage of being flexible and lower cost than conventional solar cells built from inorganic semiconductors (e.g. silicon). The low cost of OPVs is tied to lower materials and fabrication costs of organic cells. However, the current power conversion efficiencies of OPVs are still below 15%, while convention crystalline Si cells have efficiencies of 20-25%. A key limitation in OPVs today is their inability to utilize the near infrared (NIR) portion of the solar spectrum. This part of the spectrum comprises nearly half of the energy in sunlight that could be used to make electricity. The first and foremost step in conversion solar energy conversion is the absorption of light, which nature has provided us optimal model of, which is

  13. SATURATED ZONE IN-SITU TESTING

    Energy Technology Data Exchange (ETDEWEB)

    P.W. REIMUS

    2004-11-08

    The purpose of this scientific analysis is to document the results and interpretations of field experiments that test and validate conceptual flow and radionuclide transport models in the saturated zone (SZ) near Yucca Mountain, Nevada. The test interpretations provide estimates of flow and transport parameters used in the development of parameter distributions for total system performance assessment (TSPA) calculations. These parameter distributions are documented in ''Site-Scale Saturated Zone Flow Model (BSC 2004 [DIRS 170037]), Site-Scale Saturated Zone Transport'' (BSC 2004 [DIRS 170036]), Saturated Zone Colloid Transport (BSC 2004 [DIRS 170006]), and ''Saturated Zone Flow and Transport Model Abstraction'' (BSC 2004 [DIRS 170042]). Specifically, this scientific analysis contributes the following to the assessment of the capability of the SZ to serve as part of a natural barrier for waste isolation for the Yucca Mountain repository system: (1) The bases for selection of conceptual flow and transport models in the saturated volcanics and the saturated alluvium located near Yucca Mountain. (2) Results and interpretations of hydraulic and tracer tests conducted in saturated fractured volcanics at the C-wells complex near Yucca Mountain. The test interpretations include estimates of hydraulic conductivities, anisotropy in hydraulic conductivity, storativities, total porosities, effective porosities, longitudinal dispersivities, matrix diffusion mass transfer coefficients, matrix diffusion coefficients, fracture apertures, and colloid transport parameters. (3) Results and interpretations of hydraulic and tracer tests conducted in saturated alluvium at the Alluvial Testing Complex (ATC) located at the southwestern corner of the Nevada Test Site (NTS). The test interpretations include estimates of hydraulic conductivities, storativities, total porosities, effective porosities, longitudinal dispersivities, matrix diffusion mass

  14. SATURATED ZONE IN-SITU TESTING

    International Nuclear Information System (INIS)

    REIMUS, P.W.

    2004-01-01

    The purpose of this scientific analysis is to document the results and interpretations of field experiments that test and validate conceptual flow and radionuclide transport models in the saturated zone (SZ) near Yucca Mountain, Nevada. The test interpretations provide estimates of flow and transport parameters used in the development of parameter distributions for total system performance assessment (TSPA) calculations. These parameter distributions are documented in ''Site-Scale Saturated Zone Flow Model (BSC 2004 [DIRS 170037]), Site-Scale Saturated Zone Transport'' (BSC 2004 [DIRS 170036]), Saturated Zone Colloid Transport (BSC 2004 [DIRS 170006]), and ''Saturated Zone Flow and Transport Model Abstraction'' (BSC 2004 [DIRS 170042]). Specifically, this scientific analysis contributes the following to the assessment of the capability of the SZ to serve as part of a natural barrier for waste isolation for the Yucca Mountain repository system: (1) The bases for selection of conceptual flow and transport models in the saturated volcanics and the saturated alluvium located near Yucca Mountain. (2) Results and interpretations of hydraulic and tracer tests conducted in saturated fractured volcanics at the C-wells complex near Yucca Mountain. The test interpretations include estimates of hydraulic conductivities, anisotropy in hydraulic conductivity, storativities, total porosities, effective porosities, longitudinal dispersivities, matrix diffusion mass transfer coefficients, matrix diffusion coefficients, fracture apertures, and colloid transport parameters. (3) Results and interpretations of hydraulic and tracer tests conducted in saturated alluvium at the Alluvial Testing Complex (ATC) located at the southwestern corner of the Nevada Test Site (NTS). The test interpretations include estimates of hydraulic conductivities, storativities, total porosities, effective porosities, longitudinal dispersivities, matrix diffusion mass transfer coefficients, and colloid

  15. Semiconductor detectors in nuclear and particle physics

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1992-01-01

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups: Classical semiconductor diode detectors and semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported

  16. Semiconductor detectors in nuclear and particle physics

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1995-01-01

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups; (i) classical semiconductor diode detectors and (ii) semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported. copyright 1995 American Institute of Physics

  17. Characterization of rich in calcium materials using X-ray selective absorbers

    International Nuclear Information System (INIS)

    Guereca, G.; Ruvalcaba, J.L.

    2004-01-01

    For Particle Induced X-ray Emission Spectroscopy (PIXE) and X-ray Fluorescence Technique (FRX), the analysis of materials rich in one or two elements may present some difficulties due to high counting rates and saturation effects in X-ray detectors. In this case, it is possible to use selective absorbers in order to reduce the intensity of the major elements with low attenuation for the X-rays of other elements of the material. Using selective absorbers, the detection limits and the sensitivity are increased. For rich Ca materials (shells, bone, teeth and stucco, for instance), the high intensity of Ca X-rays interferes with the detection of lighter and heavier elements. Cl, Ar and Ag compounds are good candidates for Ca selective absorbers, but only Ag and Ar may have a practical absorber thickness. A selective absorber for Ca X-rays using a combination of thin Ag films and a flux of Ar and He was tested at the external beam setup of the Tandem Pelletron Accelerator for PIXE measurements. The improvement on elements detection on bone and colored stucco is shown. (Author) 8 refs., 2 tabs., 8 figs

  18. Spacesuit Evaporator-Absorber-Radiator (SEAR)

    Data.gov (United States)

    National Aeronautics and Space Administration — The primary goal is to build and test a rigid Lithium Chloride Absorber Radiator (LCAR) coupon based on honeycomb geometry that would be applicable for EVA and...

  19. Full-flow absorbers. Every centimetre counts

    Energy Technology Data Exchange (ETDEWEB)

    Berner, Joachim

    2012-07-01

    New absorbers with a maximised area for heat exchange with the thermal medium are significantly more efficient than the presently typical designs. Both the industry and researchers are working to revive an old idea. (orig.)

  20. Quantitative neutron radiography using neutron absorbing honeycomb

    International Nuclear Information System (INIS)

    Tamaki, Masayoshi; Oda, Masahiro; Takahashi, Kenji; Ohkubo, Kohei; Tasaka, Kanji; Tsuruno, Akira; Matsubayashi, Masahito.

    1993-01-01

    This investigation concerns quantitative neutron radiography and computed tomography by using a neutron absorbing honeycomb collimator. By setting the neutron absorbing honeycomb collimator between object and imaging system, neutrons scattered in the object were absorbed by the honeycomb material and eliminated before coming to the imaging system, but the neutrons which were transmitted the object without interaction could reach the imaging system. The image by purely transmitted neutrons gives the quantitative information. Two honeycombs were prepared with coating of boron nitride and gadolinium oxide and evaluated for the quantitative application. The relation between the neutron total cross section and the attenuation coefficient confirmed that they were in a fairly good agreement. Application to quantitative computed tomography was also successfully conducted. The new neutron radiography method using the neutron-absorbing honeycomb collimator for the elimination of the scattered neutrons improved remarkably the quantitativeness of the neutron radiography and computed tomography. (author)

  1. An ultra-broadband multilayered graphene absorber

    KAUST Repository

    Amin, Muhammad

    2013-01-01

    An ultra-broadband multilayered graphene absorber operating at terahertz (THz) frequencies is proposed. The absorber design makes use of three mechanisms: (i) The graphene layers are asymmetrically patterned to support higher order surface plasmon modes that destructively interfere with the dipolar mode and generate electromagnetically induced absorption. (ii) The patterned graphene layers biased at different gate voltages backedup with dielectric substrates are stacked on top of each other. The resulting absorber is polarization dependent but has an ultra-broadband of operation. (iii) Graphene\\'s damping factor is increased by lowering its electron mobility to 1000cm 2=Vs. Indeed, numerical experiments demonstrate that with only three layers, bandwidth of 90% absorption can be extended upto 7THz, which is drastically larger than only few THz of bandwidth that can be achieved with existing metallic/graphene absorbers. © 2013 Optical Society of America.

  2. Phase Space Exchange in Thick Wedge Absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Neuffer, David [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)

    2017-01-01

    The problem of phase space exchange in wedge absorbers with ionization cooling is discussed. The wedge absorber exchanges transverse and longitudinal phase space by introducing a position-dependent energy loss. In this paper we note that the wedges used with ionization cooling are relatively thick, so that single wedges cause relatively large changes in beam phase space. Calculation methods adapted to such “thick wedge” cases are presented, and beam phase-space transformations through such wedges are discussed.

  3. Actual behaviour of a ball vibration absorber

    Czech Academy of Sciences Publication Activity Database

    Pirner, Miroš

    2002-01-01

    Roč. 90, č. 8 (2002), s. 987-1005 ISSN 0167-6105 R&D Projects: GA ČR(CZ) GV103/96/K034 Institutional support: RVO:68378297 Keywords : TV towers * wind-excited vibrations * vibration absorbers * pendulum absorber Subject RIV: JM - Building Engineering Impact factor: 0.513, year: 2002 http://www.sciencedirect.com/science/article/pii/S0167610502002155#

  4. A Wedge Absorber Experiment at MICE

    Energy Technology Data Exchange (ETDEWEB)

    Neuffer, David [Fermilab; Mohayai, Tanaz [IIT, Chicago; Rogers, Chris [Rutherford; Snopok, Pavel [IIT, Chicago; Summers, Don [Mississippi U.

    2017-05-01

    Emittance exchange mediated by wedge absorbers is required for longitudinal ionization cooling and for final transverse emittance minimization for a muon collider. A wedge absorber within the MICE beam line could serve as a demonstration of the type of emittance exchange needed for 6-D cooling, including the configurations needed for muon colliders, as well as configurations for low-energy muon sources. Parameters for this test are explored in simulation and possible experimental configurations with simulated results are presented.

  5. Optically pumped semiconductor lasers: Conception and characterization of a single mode source for Cesium atoms manipulation

    International Nuclear Information System (INIS)

    Cocquelin, B.

    2009-02-01

    Lasers currently used in atomic clocks or inertial sensors are suffering from a lack of power, narrow linewidth or compactness for future spatial missions. Optically pumped semiconductor lasers, which combine the approach of classical solid state lasers and the engineering of semiconductor laser, are considered here as a candidate to a metrological laser source dedicated to the manipulation of Cesium atoms in these instruments. These lasers have demonstrated high power laser emission in a circular single transverse mode, as well as single longitudinal mode emission, favoured by the semiconductor structure and the external cavity design. We study the definition and the characterization of a proper semiconductor structure for the cooling and the detection of Cesium atoms at 852 nm. A compact and robust prototype tunable on the Cesium D2 hyperfine structure is built. The laser frequency is locked to an atomic transition thanks to a saturated absorption setup. The emission spectral properties are investigated, with a particular attention to the laser frequency noise and the laser linewidth. Finally, we describe and model the thermal properties of the semiconductor structure, which enables the simulation of the laser power characteristic. The experimental parameters are optimised to obtain the maximum output power with our structure. Thanks to our analysis, we propose several ways to overcome these limitations, by reducing the structure heating. (authors)

  6. Thermal Evaluation of Storage Rack with an Advanced Neutron Absorber during Normal Operation

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hee-Jae; Kim, Mi-Jin; Sohn, Dong-Seong [UNIST, Ulsan (Korea, Republic of)

    2016-10-15

    The storage capacity of the domestic wet storage site is expected to reach saturation from Hanbit in 2024 to Sin-wolseong in 2038 and accordingly management alternatives are urgently taken. Since installation of the dense rack is considered in the short term, it is necessary to urgently develop an advanced neutron absorber which can be applied to a spent nuclear fuel storage facility. Neutron absorber is the material for controlling the reactivity. A material which has excellent thermal neutron absorption ability, high strength and corrosion resistance must be selected as the neutron absorber. Existing neutron absorbers are made of boron which has a good thermal absorption ability such as BORAL and METAMIC. However, possible problems have been reported in using the boron-based neutron absorber for wet storage facility. Gadolinium is known to have higher neutron absorption cross-section than that of boron. And the strength of duplex stainless steel is about 1.5 times higher than stainless steel 304 which has been frequently used as a structural material. Therefore, duplex stainless steel which contains gadolinium is in consideration as an advanced neutron absorber. Temperature distribution is shown in figure 4. In pool bottom region near the inlet shows a relatively low tendency and heat generated from the fuel assemblies is transmitted to the pool upper region by the vertical flow. Also, temperature gradient appear in rack structures for the axial direction and temperature is uniformly distributed in the pool upper region. Table 1 presents the calculated results. The maximum temperature is 306.63K and does not exceed the 333.15K (60℃). The maximum temperature of the neutron absorber is 306.48K.

  7. Adaptive Piezoelectric Absorber for Active Vibration Control

    Directory of Open Access Journals (Sweden)

    Sven Herold

    2016-02-01

    Full Text Available Passive vibration control solutions are often limited to working reliably at one design point. Especially applied to lightweight structures, which tend to have unwanted vibration, active vibration control approaches can outperform passive solutions. To generate dynamic forces in a narrow frequency band, passive single-degree-of-freedom oscillators are frequently used as vibration absorbers and neutralizers. In order to respond to changes in system properties and/or the frequency of excitation forces, in this work, adaptive vibration compensation by a tunable piezoelectric vibration absorber is investigated. A special design containing piezoelectric stack actuators is used to cover a large tuning range for the natural frequency of the adaptive vibration absorber, while also the utilization as an active dynamic inertial mass actuator for active control concepts is possible, which can help to implement a broadband vibration control system. An analytical model is set up to derive general design rules for the system. An absorber prototype is set up and validated experimentally for both use cases of an adaptive vibration absorber and inertial mass actuator. Finally, the adaptive vibration control system is installed and tested with a basic truss structure in the laboratory, using both the possibility to adjust the properties of the absorber and active control.

  8. Performance of an absorbing concentrating solar collectors

    International Nuclear Information System (INIS)

    Imadojemu, H.

    1990-01-01

    This paper reports on a comparison of the efficiency of an absorbing fluid parabolic trough concentrating solar collector and a traditional concentrating collector that was made. In the absorbing fluid collector, black liquid flows through a glass tube absorber while the same black liquid flows through a selective black coated copper tube absorber while the same black fluid flows through a selective black coated copper tube absorber in the traditional collector. After a careful study of the properties of available black liquids, a mixture of water and black ink was chosen as the black absorbing medium or transfer fluid. In the black liquid glass collector there is a slightly improved efficiency based on beam radiation as a result of the direct absorption process and an increase in the effective transmittance absorptance. At worst the efficiency of this collector equals that of the traditional concentrating collector when the efficiency is based on total radiation. The collector's reflecting surfaces were made of aluminum sheet, parabolic line focus and with cylindrical receivers. The ease of manufacture and reduced cost per unit energy collected, in addition to the clean and pollution free mode of energy conversion, makes it very attractive

  9. Lipid order, saturation and surface property relationships: a study of human meibum saturation.

    Science.gov (United States)

    Mudgil, Poonam; Borchman, Douglas; Yappert, Marta C; Duran, Diana; Cox, Gregory W; Smith, Ryan J; Bhola, Rahul; Dennis, Gary R; Whitehall, John S

    2013-11-01

    Tear film stability decreases with age however the cause(s) of the instability are speculative. Perhaps the more saturated meibum from infants may contribute to tear film stability. The meibum lipid phase transition temperature and lipid hydrocarbon chain order at physiological temperature (33 °C) decrease with increasing age. It is reasonable that stronger lipid-lipid interactions could stabilize the tear film since these interactions must be broken for tear break up to occur. In this study, meibum from a pool of adult donors was saturated catalytically. The influence of saturation on meibum hydrocarbon chain order was determined by infrared spectroscopy. Meibum is in an anhydrous state in the meibomian glands and on the surface of the eyelid. The influence of saturation on the surface properties of meibum was determined using Langmuir trough technology. Saturation of native human meibum did not change the minimum or maximum values of hydrocarbon chain order so at temperatures far above or below the phase transition of human meibum, saturation does not play a role in ordering or disordering the lipid hydrocarbon chains. Saturation did increase the phase transition temperature in human meibum by over 20 °C, a relatively high amount. Surface pressure-area studies showing the late take off and higher maximum surface pressure of saturated meibum compared to native meibum suggest that the saturated meibum film is quite molecularly ordered (stiff molecular arrangement) and elastic (molecules are able to rearrange during compression and expansion) compared with native meibum films which are more fluid agreeing with the infrared spectroscopic results of this study. In saturated meibum, the formation of compacted ordered islands of lipids above the surfactant layer would be expected to decrease the rate of evaporation compared to fluid and more loosely packed native meibum. Higher surface pressure observed with films of saturated meibum compared to native meibum

  10. Transversal light forces in semiconductors

    CERN Document Server

    Lindberg, M

    2003-01-01

    The transversal light force is a well established effect in atomic and molecular systems that are exposed to spatially inhomogeneous light fields. In this paper it is shown theoretically that in an excited semiconductor, containing an electron-hole plasma or excitons, a similar light force exists, if the semiconductor is exposed to an ultrashort spatially inhomogeneous light field. The analysis is based on the equations of motion for the Wigner distribution functions of charge carrier populations and interband polarizations. The results show that, while the light force on the electron-hole plasma or the excitons does exist, its effects on the kinetic behaviour of the electron-hole plasma or the excitons are different compared to the situation in an atomic or molecular system. A detailed analysis presented here traces this difference back to the principal differences between atoms and molecules on the one hand and electron-hole plasmas or excitons on the other hand.

  11. Semiconductor electrolyte photovoltaic energy converter

    Science.gov (United States)

    Anderson, W. W.; Anderson, L. B.

    1975-01-01

    Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

  12. Hypersonic modes in nanophononic semiconductors.

    Science.gov (United States)

    Hepplestone, S P; Srivastava, G P

    2008-09-05

    Frequency gaps and negative group velocities of hypersonic phonon modes in periodically arranged composite semiconductors are presented. Trends and criteria for phononic gaps are discussed using a variety of atomic-level theoretical approaches. From our calculations, the possibility of achieving semiconductor-based one-dimensional phononic structures is established. We present results of the location and size of gaps, as well as negative group velocities of phonon modes in such structures. In addition to reproducing the results of recent measurements of the locations of the band gaps in the nanosized Si/Si{0.4}Ge{0.6} superlattice, we show that such a system is a true one-dimensional hypersonic phononic crystal.

  13. Dielectric function of semiconductor superlattice

    International Nuclear Information System (INIS)

    Qin Guoyi.

    1990-08-01

    We present a calculation of the dielectric function for semiconductor GaAs/Ga 1-x Al x As superlattice taking account of the extension of the electron envelope function and the difference of both the dielectric constant and width between GaAs and Ga 1-x Al x As layers. In the appropriate limits, our results exactly reduce to the well-known results of the quasi two-dimensional electron gas obtained by Lee and Spector and of the period array of two-dimensional electron layers obtained by Das Sarma and Quinn. By means of the dielectric function of the superlattice, the dispersion relation of the collective excitation and the screening property of semiconductor superlattice are discussed and compared with the results of the quasi two-dimensional system and with the results of the periodic array of the two-dimensional electron layers. (author). 4 refs, 3 figs

  14. Spectroscopic analysis of optoelectronic semiconductors

    CERN Document Server

    Jimenez, Juan

    2016-01-01

    This book deals with standard spectroscopic techniques which can be used to analyze semiconductor samples or devices, in both, bulk, micrometer and submicrometer scale. The book aims helping experimental physicists and engineers to choose the right analytical spectroscopic technique in order to get specific information about their specific demands. For this purpose, the techniques including technical details such as apparatus and probed sample region are described. More important, also the expected outcome from experiments is provided. This involves also the link to theory, that is not subject of this book, and the link to current experimental results in the literature which are presented in a review-like style. Many special spectroscopic techniques are introduced and their relationship to the standard techniques is revealed. Thus the book works also as a type of guide or reference book for people researching in optical spectroscopy of semiconductors.

  15. Efficient Spin Injection into Semiconductor

    International Nuclear Information System (INIS)

    Nahid, M.A.I.

    2010-06-01

    Spintronic research has made tremendous progress nowadays for making future devices obtain extra advantages of low power, and faster and higher scalability compared to present electronic devices. A spintronic device is based on the transport of an electron's spin instead of charge. Efficient spin injection is one of the very important requirements for future spintronic devices. However, the effective spin injection is an exceedingly difficult task. In this paper, the importance of spin injection, basics of spin current and the essential requirements of spin injection are illustrated. The experimental technique of electrical spin injection into semiconductor is also discussed based on the experimental experience. The electrical spin injection can easily be implemented for spin injection into any semiconductor. (author)

  16. Compound semiconductor optical waveguide switch

    Science.gov (United States)

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  17. Semiconductors put spin in spintronics

    International Nuclear Information System (INIS)

    Weiss, Dieter

    2000-01-01

    Electrons and holes, which carry the current in semiconductor devices, are quantum-mechanical objects characterized by a set of quantum numbers - the band index, the wave-vector (which is closely related to the electron or hole velocity) and spin. The spin, however, is one of the strangest properties of particles. In simple terms, we can think of the spin as an internal rotation of the electron, but it has no classical counterpart. The spin is connected to a quantized magnetic moment and hence acts as a microscopic magnet. Thus the electron spin can adopt one of two directions (''up'' or ''down'') in a magnetic field. The spin plays no role in conventional electronics and the current in any semiconductor device is made up of a mixture of electrons with randomly oriented spins. However, a new range of electronic devices that transport the spin of the electrons, in addition to their charge, is being developed. But the biggest obstacle to making practical ''spin electronic'' or ''spintronic'' devices so far has been finding a way of injecting spin-polarized electrons or holes into the semiconductor and then detecting them. Recently a team of physicists from the University of Wuerzburg in Germany, and also a collaboration of researchers from Tohoku University in Japan and the University of California at Santa Barbara, have found a way round these problems using either semi-magnetic or ferromagnetic semiconductors as ''spin aligners'' (R Fiederling et al. 1999 Nature 402 787; Y Ohno et al. 1999 Nature 402 790). In this article the author presents the latest breakthrough in spintronics research. (UK)

  18. Interger multiplication with overflow detection or saturation

    Energy Technology Data Exchange (ETDEWEB)

    Schulte, M.J.; Balzola, P.I.; Akkas, A.; Brocato, R.W.

    2000-01-11

    High-speed multiplication is frequently used in general-purpose and application-specific computer systems. These systems often support integer multiplication, where two n-bit integers are multiplied to produce a 2n-bit product. To prevent growth in word length, processors typically return the n least significant bits of the product and a flag that indicates whether or not overflow has occurred. Alternatively, some processors saturate results that overflow to the most positive or most negative representable number. This paper presents efficient methods for performing unsigned or two's complement integer multiplication with overflow detection or saturation. These methods have significantly less area and delay than conventional methods for integer multiplication with overflow detection and saturation.

  19. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  20. Ballistic superconductivity in semiconductor nanowires

    Science.gov (United States)

    Zhang, Hao; Gül, Önder; Conesa-Boj, Sonia; Nowak, Michał P.; Wimmer, Michael; Zuo, Kun; Mourik, Vincent; de Vries, Folkert K.; van Veen, Jasper; de Moor, Michiel W. A.; Bommer, Jouri D. S.; van Woerkom, David J.; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P.A.M.; Quintero-Pérez, Marina; Cassidy, Maja C.; Koelling, Sebastian; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P.

    2017-01-01

    Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices. PMID:28681843

  1. Radiation tolerance of amorphous semiconductors

    International Nuclear Information System (INIS)

    Nicolaides, R.V.; DeFeo, S.; Doremus, L.W.

    1976-01-01

    In an attempt to determine the threshold radiation damage in amorphous semiconductors, radiation tests were performed on amorphous semiconductor thin film materials and on threshold and memory devices. The influence of flash x-rays and neutron radiation upon the switching voltages, on- and off-state characteristics, dielectric response, optical transmission, absorption band edge and photoconductivity were measured prior to, during and following irradiation. These extensive tests showed the high radiation tolerance of amorphous semiconductor materials. Electrical and optical properties, other than photoconductivity, have a neutron radiation tolerance threshold above 10 17 nvt in the steady state and 10 14 nvt in short (50 μsec to 16 msec) pulses. Photoconductivity increases by 1 1 / 2 orders of magnitude at the level of 10 14 nvt (short pulses of 50 μsec). Super flash x-rays up to 5000 rads (Si), 20 nsec, do not initiate switching in off-state samples which are voltage biased up to 90 percent of the threshold voltage. Both memory and threshold amorphous devices are capable of switching on and off during nuclear radiation transients at least as high as 2 x 10 14 nvt in 50 μsec pulses

  2. Thienoacene-based organic semiconductors.

    Science.gov (United States)

    Takimiya, Kazuo; Shinamura, Shoji; Osaka, Itaru; Miyazaki, Eigo

    2011-10-11

    Thienoacenes consist of fused thiophene rings in a ladder-type molecular structure and have been intensively studied as potential organic semiconductors for organic field-effect transistors (OFETs) in the last decade. They are reviewed here. Despite their simple and similar molecular structures, the hitherto reported properties of thienoacene-based OFETs are rather diverse. This Review focuses on four classes of thienoacenes, which are classified in terms of their chemical structures, and elucidates the molecular electronic structure of each class. The packing structures of thienoacenes and the thus-estimated solid-state electronic structures are correlated to their carrier transport properties in OFET devices. With this perspective of the molecular structures of thienoacenes and their carrier transport properties in OFET devices, the structure-property relationships in thienoacene-based organic semiconductors are discussed. The discussion provides insight into new molecular design strategies for the development of superior organic semiconductors. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Identification of defects in semiconductors

    CERN Document Server

    Stavola, Michael; Weber, Eicke R; Stavola, Michael

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this traditi...

  4. The Electrical Characteristics of The N-Organic Semiconductor/P-Inorganic Semiconductor Diode

    International Nuclear Information System (INIS)

    Aydin, M. E.

    2008-01-01

    n-organic semiconductor (PEDOT) / p-inorganic semiconductor Si diode was formed by deep coating method. The method has been achieved by coating n-inorganic semiconductor PEDOT on top of p-inorganic semiconductor. The n-organic semiconductor PEDOT/ p-inorganic semiconductor diode demonstrated rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The barrier height , ideality factor values were obtained as of 0.88 eV and 1.95 respectively. The diode showed non-ideal I-V behavior with an ideality factor greater than unity that could be ascribed to the interfacial layer

  5. Tracking Controller for Intrinsic Output Saturated Systems in Presence of Amplitude and Rate Input Saturations

    DEFF Research Database (Denmark)

    Chater, E.; Giri, F.; Guerrero, Josep M.

    2014-01-01

    We consider the problem of controlling plants that are subject to multiple saturation constraints. Especially, we are interested in linear systems whose input is subject to amplitude and rate constraints of saturation type. Furthermore, the considered systems output is also subject to an intrinsi...

  6. Studies of non-isothermal flow in saturated and partially saturated porous media

    International Nuclear Information System (INIS)

    Ho, C.K.; Maki, K.S.; Glass, R.J.

    1993-01-01

    Physical and numerical experiments have been performed to investigate the behavior of nonisothermal flow in two-dimensional saturated and partially saturated porous media. The physical experiments were performed to identify non-isothermal flow fields and temperature distributions in fully saturated, half-saturated, and residually saturated two-dimensional porous media with bottom heating and top cooling. Two counter-rotating liquid-phase convective cells were observed to develop in the saturated regions of all three cases. Gas-phase convection was also evidenced in the unsaturated regions of the partially saturated experiments. TOUGH2 numerical simulations of the saturated case were found to be strongly dependent on the assumed boundary conditions of the physical system. Models including heat losses through the boundaries of the test cell produced temperature and flow fields that were in better agreement with the observed temperature and flow fields than models that assumed insulated boundary conditions. A sensitivity analysis also showed that a reduction of the bulk permeability of the porous media in the numerical simulations depressed the effects of convection, flattening the temperature profiles across the test cell

  7. Femoral venous oxygen saturation is no surrogate for central venous oxygen saturation

    NARCIS (Netherlands)

    van Beest, Paul A.; van der Schors, Alice; Liefers, Henriette; Coenen, Ludo G. J.; Braam, Richard L.; Habib, Najib; Braber, Annemarije; Scheeren, Thomas W. L.; Kuiper, Michael A.; Spronk, Peter E.

    2012-01-01

    Objective:  The purpose of our study was to determine if central venous oxygen saturation and femoral venous oxygen saturation can be used interchangeably during surgery and in critically ill patients. Design:  Prospective observational controlled study. Setting:  Nonacademic university-affiliated

  8. Saturated poroelastic actuators generated by topology optimization

    DEFF Research Database (Denmark)

    Andreasen, Casper Schousboe; Sigmund, Ole

    2011-01-01

    the coupling of internal fluid pressure and elastic shear stresses a slab of the optimized porous material deflects/deforms when a pressure is imposed and an actuator is created. Several phenomenologically based constraints are imposed in order to get a stable force transmitting actuator.......In this paper the fluid-structure interaction problem of a saturated porous media is considered. The pressure coupling properties of porous saturated materials change with the microstructure and this is utilized in the design of an actuator using a topology optimized porous material. By maximizing...

  9. High speed drying of saturated steam

    International Nuclear Information System (INIS)

    Marty, C.; Peyrelongue, J.P.

    1993-01-01

    This paper describes the development of the drying process for the saturated steam used in the PWR nuclear plant turbines in order to prevent negative effects of water on turbine efficiency, maintenance costs and equipment lifetime. The high speed drying concept is based on rotating the incoming saturated steam in order to separate water which is more denser than the steam; the water film is then extracted through an annular slot. A multicellular modular equipment has been tested. Applications on high and low pressure extraction of various PWR plants are described (Bugey, Loviisa)

  10. Site-Scale Saturated Zone Flow Model

    International Nuclear Information System (INIS)

    G. Zyvoloski

    2003-01-01

    The purpose of this model report is to document the components of the site-scale saturated-zone flow model at Yucca Mountain, Nevada, in accordance with administrative procedure (AP)-SIII.lOQ, ''Models''. This report provides validation and confidence in the flow model that was developed for site recommendation (SR) and will be used to provide flow fields in support of the Total Systems Performance Assessment (TSPA) for the License Application. The output from this report provides the flow model used in the ''Site-Scale Saturated Zone Transport'', MDL-NBS-HS-000010 Rev 01 (BSC 2003 [162419]). The Site-Scale Saturated Zone Transport model then provides output to the SZ Transport Abstraction Model (BSC 2003 [164870]). In particular, the output from the SZ site-scale flow model is used to simulate the groundwater flow pathways and radionuclide transport to the accessible environment for use in the TSPA calculations. Since the development and calibration of the saturated-zone flow model, more data have been gathered for use in model validation and confidence building, including new water-level data from Nye County wells, single- and multiple-well hydraulic testing data, and new hydrochemistry data. In addition, a new hydrogeologic framework model (HFM), which incorporates Nye County wells lithology, also provides geologic data for corroboration and confidence in the flow model. The intended use of this work is to provide a flow model that generates flow fields to simulate radionuclide transport in saturated porous rock and alluvium under natural or forced gradient flow conditions. The flow model simulations are completed using the three-dimensional (3-D), finite-element, flow, heat, and transport computer code, FEHM Version (V) 2.20 (software tracking number (STN): 10086-2.20-00; LANL 2003 [161725]). Concurrently, process-level transport model and methodology for calculating radionuclide transport in the saturated zone at Yucca Mountain using FEHM V 2.20 are being

  11. Saturated Zone Colloid-Facilitated Transport

    International Nuclear Information System (INIS)

    Wolfsberg, A.; Reimus, P.

    2001-01-01

    The purpose of the Saturated Zone Colloid-Facilitated Transport Analysis and Modeling Report (AMR), as outlined in its Work Direction and Planning Document (CRWMS MandO 1999a), is to provide retardation factors for colloids with irreversibly-attached radionuclides, such as plutonium, in the saturated zone (SZ) between their point of entrance from the unsaturated zone (UZ) and downgradient compliance points. Although it is not exclusive to any particular radionuclide release scenario, this AMR especially addresses those scenarios pertaining to evidence from waste degradation experiments, which indicate that plutonium and perhaps other radionuclides may be irreversibly attached to colloids. This report establishes the requirements and elements of the design of a methodology for calculating colloid transport in the saturated zone at Yucca Mountain. In previous Total Systems Performance Assessment (TSPA) analyses, radionuclide-bearing colloids were assumed to be unretarded in their migration. Field experiments in fractured tuff at Yucca Mountain and in porous media at other sites indicate that colloids may, in fact, experience retardation relative to the mean pore-water velocity, suggesting that contaminants associated with colloids should also experience some retardation. Therefore, this analysis incorporates field data where available and a theoretical framework when site-specific data are not available for estimating plausible ranges of retardation factors in both saturated fractured tuff and saturated alluvium. The distribution of retardation factors for tuff and alluvium are developed in a form consistent with the Performance Assessment (PA) analysis framework for simulating radionuclide transport in the saturated zone. To improve on the work performed so far for the saturated-zone flow and transport modeling, concerted effort has been made in quantifying colloid retardation factors in both fractured tuff and alluvium. The fractured tuff analysis used recent data

  12. On the saturation of astrophysical dynamos

    DEFF Research Database (Denmark)

    Dorch, Bertil; Archontis, Vasilis

    2004-01-01

    In the context of astrophysical dynamos we illustrate that the no-cosines flow, with zero mean helicity, can drive fast dynamo action and we study the dynamo's mode of operation during both the linear and non-linear saturation regimes. It turns out that in addition to a high growth rate in the li......In the context of astrophysical dynamos we illustrate that the no-cosines flow, with zero mean helicity, can drive fast dynamo action and we study the dynamo's mode of operation during both the linear and non-linear saturation regimes. It turns out that in addition to a high growth rate...

  13. Nonlinear saturation of the Rayleigh Taylor instability

    International Nuclear Information System (INIS)

    Das, A.; Mahajan, S.; Kaw, P.; Sen, A.; Benkadda, S.; Verga, A.

    1997-01-01

    The problem of the nonlinear saturation of the 2 dimensional Rayleigh Taylor instability is re-examined to put various earlier results in a proper perspective. The existence of a variety of final states can be attributed to the differences in the choice of boundary conditions and initial conditions in earlier numerical modeling studies. Our own numerical simulations indicate that the RT instability saturates by the self consistent generation of shear flow even in situations (with periodic boundaries) where, in principle, an infinite amount of gravitational energy can be tapped. Such final states can be achieved for suitable values of the Prandtl number. (author)

  14. Saturable absorption in detonation nanodiamond dispersions

    Science.gov (United States)

    Vanyukov, Viatcheslav; Mikheev, Gennady; Mogileva, Tatyana; Puzyr, Alexey; Bondar, Vladimir; Lyashenko, Dmitry; Chuvilin, Andrey

    2017-07-01

    We report on a saturable absorption in aqueous dispersions of nanodiamonds with femtosecond laser pulse excitation at a wavelength of 795 nm. The open aperture Z-scan experiments reveal that in a wide range of nanodiamond particle sizes and concentrations, a light-induced increase of transmittance occurs. The transmittance increase originates from the saturation of light absorption and is associated with a light absorption at 1.5 eV by graphite and dimer chains (Pandey dimer chains). The obtained key nonlinear parameters of nanodiamond dispersions are compared with those of graphene and carbon nanotubes, which are widely used for the mode-locking.

  15. EDITORIAL: Focus on Dilute Magnetic Semiconductors FOCUS ON DILUTE MAGNETIC SEMICONDUCTORS

    Science.gov (United States)

    Chambers, Scott A.; Gallagher, Bryan

    2008-05-01

    -orbit coupling. They have also led to the demonstration of a wide range of novel phenomena including some, like tunneling anisotropic magnetoresistance, which have subsequently been achieved in metal ferromagnetic systems. However despite considerable effort over many years the maximum Curie point achieved in (Ga,Mn)As is still less than 200 K. So unless some major new breakthrough is achieved these materials are unlikely to be of use for practical spin electronics technologies. In 2000, Dietl et al [1] published a seminal paper in which mean field theory was used to predict which of the common diamagnetic semiconductors would exhibit a Curie point above ambient if doped with 5 at.% Mn and a hole concentration of 3.5 × 1020 cm-3. Of the many host semiconductors simulated, only ZnO and GaN were predicted to exhibit a critical temperature in excess of 300 K. Since 2000, high-Tc DMS research has proliferated in both experimental and theoretical arenas. Many papers have been published containing claims of new DMS materials based largely on limited film growth, powder diffraction, and magnetometry. In these papers, a film which exhibits a hysteretic SQUID or VSM loop at 300 K and phase purity with only the host semiconductor detected by XRD are often claimed to be true ferromagnetic DMSs. Many of these papers are flawed because the criteria for a well-defined DMS are much more extensive. These include: (i) a random dopant distribution, (ii) a well-known and preferably unique charge state and preferentially a unique local structural environment for the dopant, (iii) a demonstrated coupling of the dopant spin to the host band structure, leading to spin polarization of the majority carriers, and (iv) a rational dependence of the saturation magnetization and Curie point on the magnetic dopant and carrier concentrations. Implicit in this list is that trivial causes of ferromagnetism, such as magnetic contamination and magnetic secondary phase formation, are eliminated. Yet, in many

  16. New Icosahedral Boron Carbide Semiconductors

    Science.gov (United States)

    Echeverria Mora, Elena Maria

    Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

  17. Conductivity in transparent oxide semiconductors.

    Science.gov (United States)

    King, P D C; Veal, T D

    2011-08-24

    Despite an extensive research effort for over 60 years, an understanding of the origins of conductivity in wide band gap transparent conducting oxide (TCO) semiconductors remains elusive. While TCOs have already found widespread use in device applications requiring a transparent contact, there are currently enormous efforts to (i) increase the conductivity of existing materials, (ii) identify suitable alternatives, and (iii) attempt to gain semiconductor-engineering levels of control over their carrier density, essential for the incorporation of TCOs into a new generation of multifunctional transparent electronic devices. These efforts, however, are dependent on a microscopic identification of the defects and impurities leading to the high unintentional carrier densities present in these materials. Here, we review recent developments towards such an understanding. While oxygen vacancies are commonly assumed to be the source of the conductivity, there is increasing evidence that this is not a sufficient mechanism to explain the total measured carrier concentrations. In fact, many studies suggest that oxygen vacancies are deep, rather than shallow, donors, and their abundance in as-grown material is also debated. We discuss other potential contributions to the conductivity in TCOs, including other native defects, their complexes, and in particular hydrogen impurities. Convincing theoretical and experimental evidence is presented for the donor nature of hydrogen across a range of TCO materials, and while its stability and the role of interstitial versus substitutional species are still somewhat open questions, it is one of the leading contenders for yielding unintentional conductivity in TCOs. We also review recent work indicating that the surfaces of TCOs can support very high carrier densities, opposite to the case for conventional semiconductors. In thin-film materials/devices and, in particular, nanostructures, the surface can have a large impact on the total

  18. Bit rate and pulse width dependence of four-wave mixing of short optical pulses in semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Diez, S.; Mecozzi, A.; Mørk, Jesper

    1999-01-01

    We investigate the saturation properties of four-wave mixing of short optical pulses in a semiconductor optical amplifier. By varying the gain of the optical amplifier, we find a strong dependence of both conversion efficiency and signal-to-background ratio on pulse width and bit rate....... In particular, the signal-to-background ratio can be optimized for a specific amplifier gain. This behavior, which is coherently described in experiment and theory, is attributed to the dynamics of the amplified spontaneous emission, which is the main source of noise in a semiconductor optical amplifier....

  19. Method of absorbance correction in a spectroscopic heating value sensor

    Science.gov (United States)

    Saveliev, Alexei; Jangale, Vilas Vyankatrao; Zelepouga, Sergeui; Pratapas, John

    2013-09-17

    A method and apparatus for absorbance correction in a spectroscopic heating value sensor in which a reference light intensity measurement is made on a non-absorbing reference fluid, a light intensity measurement is made on a sample fluid, and a measured light absorbance of the sample fluid is determined. A corrective light intensity measurement at a non-absorbing wavelength of the sample fluid is made on the sample fluid from which an absorbance correction factor is determined. The absorbance correction factor is then applied to the measured light absorbance of the sample fluid to arrive at a true or accurate absorbance for the sample fluid.

  20. Dual-sided microstructured semiconductor neutron detectors (DSMSNDs)

    International Nuclear Information System (INIS)

    Fronk, Ryan G.; Bellinger, Steven L.; Henson, Luke C.; Ochs, Taylor R.; Smith, Colten T.; Kenneth Shultis, J.; McGregor, Douglas S.

    2015-01-01

    Microstructured semiconductor neutron detectors (MSNDs) have in recent years received much interest as high-efficiency replacements for thin-film-coated thermal neutron detectors. The basic device structure of the MSND involves micro-sized trenches that are etched into a vertically-oriented pvn-junction diode that are backfilled with a neutron converting material. Neutrons absorbed within the converting material induce fission of the parent nucleus, producing a pair of energetic charged-particle reaction products that can be counted by the diode. The MSND deep-etched microstructures produce good neutron-absorption and reaction-product counting efficiencies, offering a 10× improvement in intrinsic thermal neutron detection efficiency over thin-film-coated devices. Performance of present-day MSNDs are nearing theoretical limits; streaming paths between the conversion-material backfilled trenches, allow a considerable fraction of neutrons to pass undetected through the device. Dual-sided microstructured semiconductor neutron detectors (DSMSNDs) have been developed that utilize a complementary second set of trenches on the back-side of the device to count streaming neutrons. DSMSND devices are theoretically capable of greater than 80% intrinsic thermal neutron detection efficiency for a 1-mm thick device. The first such prototype DSMSNDs, presented here, have achieved 29.48±0.29% nearly 2× better than MSNDs with similar microstructure dimensions.