WorldWideScience

Sample records for semiconductor manufacturing facility

  1. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  2. Introduction to semiconductor manufacturing technology

    CERN Document Server

    2012-01-01

    IC chip manufacturing processes, such as photolithography, etch, CVD, PVD, CMP, ion implantation, RTP, inspection, and metrology, are complex methods that draw upon many disciplines. [i]Introduction to Semiconductor Manufacturing Technologies, Second Edition[/i] thoroughly describes the complicated processes with minimal mathematics, chemistry, and physics; it covers advanced concepts while keeping the contents accessible to readers without advanced degrees. Designed as a textbook for college students, this book provides a realistic picture of the semiconductor industry and an in-depth discuss

  3. Composite Structures Manufacturing Facility

    Data.gov (United States)

    Federal Laboratory Consortium — The Composite Structures Manufacturing Facility specializes in the design, analysis, fabrication and testing of advanced composite structures and materials for both...

  4. Manufacturing Demonstration Facility (MDF)

    Data.gov (United States)

    Federal Laboratory Consortium — The U.S. Department of Energy Manufacturing Demonstration Facility (MDF) at Oak Ridge National Laboratory (ORNL) provides a collaborative, shared infrastructure to...

  5. Automation and Integration in Semiconductor Manufacturing

    OpenAIRE

    Liao, Da-Yin

    2010-01-01

    Semiconductor automation originates from the prevention and avoidance of frauds in daily fab operations. As semiconductor technology and business continuously advance and grow, manufacturing systems must aggressively evolve to meet the changing technical and business requirements in this industry. Semiconductor manufacturing has been suffering pains from islands of automation. The problems associated with these systems are limited

  6. Method of manufacturing semiconductor devices

    International Nuclear Information System (INIS)

    Sun, Y.S.E.

    1980-01-01

    A method of improving the electrical characteristics of semiconductor devices such as SCR's, rectifiers and triacs during their manufacture is described. The system consists of electron irradiation at an energy in excess of 250 KeV and most preferably between 1.5 and 12 MeV, producing an irradiation dose of between 5.10 12 and 5.10 15 electrons per sq. cm., and at a temperature in excess of 100 0 C preferably between 150 and 375 0 C. (U.K.)

  7. Fundamentals of semiconductor manufacturing and process control

    CERN Document Server

    May, Gary S

    2006-01-01

    A practical guide to semiconductor manufacturing from process control to yield modeling and experimental design Fundamentals of Semiconductor Manufacturing and Process Control covers all issues involved in manufacturing microelectronic devices and circuits, including fabrication sequences, process control, experimental design, process modeling, yield modeling, and CIM/CAM systems. Readers are introduced to both the theory and practice of all basic manufacturing concepts. Following an overview of manufacturing and technology, the text explores process monitoring methods, including those that focus on product wafers and those that focus on the equipment used to produce wafers. Next, the text sets forth some fundamentals of statistics and yield modeling, which set the foundation for a detailed discussion of how statistical process control is used to analyze quality and improve yields. The discussion of statistical experimental design offers readers a powerful approach for systematically varying controllable p...

  8. Semiconductors integrated circuit design for manufacturability

    CERN Document Server

    Balasinki, Artur

    2011-01-01

    Because of the continuous evolution of integrated circuit manufacturing (ICM) and design for manufacturability (DfM), most books on the subject are obsolete before they even go to press. That's why the field requires a reference that takes the focus off of numbers and concentrates more on larger economic concepts than on technical details. Semiconductors: Integrated Circuit Design for Manufacturability covers the gradual evolution of integrated circuit design (ICD) as a basis to propose strategies for improving return-on-investment (ROI) for ICD in manufacturing. Where most books put the spotl

  9. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

    NARCIS (Netherlands)

    2008-01-01

    The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

  10. Microeconomics of process control in semiconductor manufacturing

    Science.gov (United States)

    Monahan, Kevin M.

    2003-06-01

    Process window control enables accelerated design-rule shrinks for both logic and memory manufacturers, but simple microeconomic models that directly link the effects of process window control to maximum profitability are rare. In this work, we derive these links using a simplified model for the maximum rate of profit generated by the semiconductor manufacturing process. We show that the ability of process window control to achieve these economic objectives may be limited by variability in the larger manufacturing context, including measurement delays and process variation at the lot, wafer, x-wafer, x-field, and x-chip levels. We conclude that x-wafer and x-field CD control strategies will be critical enablers of density, performance and optimum profitability at the 90 and 65nm technology nodes. These analyses correlate well with actual factory data and often identify millions of dollars in potential incremental revenue and cost savings. As an example, we show that a scatterometry-based CD Process Window Monitor is an economically justified, enabling technology for the 65nm node.

  11. Method of manufacturing a semiconductor sensor device and semiconductor sensor device

    NARCIS (Netherlands)

    2009-01-01

    The invention relates to a method of manufacturing a semiconductor sensor device (10) for sensing a substance comprising a plurality of mutually parallel mesa-shaped semiconductor regions (1) which are formed on a surface of a semiconductor body (11) and which are connected at a first end to a first

  12. NICE3 SO3 Cleaning Process in Semiconductor Manufacturing

    International Nuclear Information System (INIS)

    Blazek, Steve

    1999-01-01

    This fact sheet explains how Anon, Inc., has developed a novel method of removing photoresist--a light-sensitive material used to produce semiconductor wafers for computers--from the computer manufacturing process at reduced cost and greater efficiency. The new technology is technically superior to existing semiconductor cleaning methods and results in reduced use of hazardous chemicals

  13. Composites Manufacturing Education and Technology Facility Expedites Manufacturing Innovation

    Energy Technology Data Exchange (ETDEWEB)

    2017-01-01

    The Composites Manufacturing Education and Technology facility (CoMET) at the National Wind Technology Center at the National Renewable Energy Laboratory (NREL) paves the way for innovative wind turbine components and accelerated manufacturing. Available for use by industry partners and university researchers, the 10,000-square-foot facility expands NREL's composite manufacturing research capabilities by enabling researchers to design, prototype, and test composite wind turbine blades and other components -- and then manufacture them onsite. Designed to work in conjunction with NREL's design, analysis, and structural testing capabilities, the CoMET facility expedites manufacturing innovation.

  14. Impact of nano particles on semiconductor manufacturing

    NARCIS (Netherlands)

    Wali, F.; Knotter, D.M.; Kuper, F.G.

    2008-01-01

    Semiconductor industry faces a continuous challenge to decrease the transistor size as well as to increase the yield by eliminating defect sources. One of the sources of particle defects is ultra pure water used in different production tools at different stages of processing. In this paper, particle

  15. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  16. Production planning and control for semiconductor wafer fabrication facilities modeling, analysis, and systems

    CERN Document Server

    Mönch, Lars; Mason, Scott J

    2012-01-01

    Over the last fifty-plus years, the increased complexity and speed of integrated circuits have radically changed our world. Today, semiconductor manufacturing is perhaps the most important segment of the global manufacturing sector. As the semiconductor industry has become more competitive, improving planning and control has become a key factor for business success. This book is devoted to production planning and control problems in semiconductor wafer fabrication facilities. It is the first book that takes a comprehensive look at the role of modeling, analysis, and related information systems

  17. Coherent diffractive imaging methods for semiconductor manufacturing

    Science.gov (United States)

    Helfenstein, Patrick; Mochi, Iacopo; Rajeev, Rajendran; Fernandez, Sara; Ekinci, Yasin

    2017-12-01

    The paradigm shift of the semiconductor industry moving from deep ultraviolet to extreme ultraviolet lithography (EUVL) brought about new challenges in the fabrication of illumination and projection optics, which constitute one of the core sources of cost of ownership for many of the metrology tools needed in the lithography process. For this reason, lensless imaging techniques based on coherent diffractive imaging started to raise interest in the EUVL community. This paper presents an overview of currently on-going research endeavors that use a number of methods based on lensless imaging with coherent light.

  18. Strengthening the Competitiveness and Sustainability of a Semiconductor Manufacturer with Cloud Manufacturing

    Directory of Open Access Journals (Sweden)

    Toly Chen

    2014-01-01

    Full Text Available Cloud manufacturing (CMfg is a new-generation service-oriented networked manufacturing model that provides distributed users centralized managed manufacturing resources, ability, and services. CMfg is applied here to a semiconductor manufacturing factory. Benefits are classified into five aspects: cost savings, efficiency, additional data analysis capabilities, flexibility, and closer partner relationships. A strength, weakness, opportunity, and threat (SWOT analysis is done which guides a semiconductor manufacturer in planning CMfg implementation projects. Simulation of a wafer fabrication factory (wafer fab is used as an example. Several CMfg services are proposed for assisting the fab simulation activities through the collaboration of cloud service providers, software vendors, equipment suppliers, and the wafer fab. The connection with the competitiveness and sustainability of a wafer fab is also stressed.

  19. Rare resource supply crisis and solution technology for semiconductor manufacturing

    Science.gov (United States)

    Fukuda, Hitomi; Hu, Sophia; Yoo, Youngsun; Takahisa, Kenji; Enami, Tatsuo

    2016-03-01

    There are growing concerns over future environmental impact and earth resource shortage throughout the world and in many industries. Our semiconductor industry is not excluded. "Green" has become an important topic as production volume become larger and more powerful. Especially, the rare gases are widely used in semiconductor manufacturing because of its inertness and extreme chemical stability. One major component of an Excimer laser system is Neon. It is used as a buffer gas for Argon (Ar) and Krypton (Kr) gases used in deep ultraviolet (DUV) lithography laser systems. Since Neon gas accounting for more than 96% of the laser gas mixture, a fairly large amount of neon gas is consumed to run these DUV lasers. However, due to country's instability both in politics and economics in Ukraine, the main producer of neon gas today, supply reduction has become an issue and is causing increasing concern. This concern is not only based on price increases, but has escalated to the point of supply shortages in 2015. This poses a critical situation for the semiconductor industry, which represents the leading consumer of neon gas in the world. Helium is another noble gas used for Excimer laser operation. It is used as a purge gas for optical component modules to prevent from being damaged by active gases and impurities. Helium has been used in various industries, including for medical equipment, linear motor cars, and semiconductors, and is indispensable for modern life. But consumption of helium in manufacturing has been increased dramatically, and its unstable supply and price rise has been a serious issue today. In this article, recent global supply issue of rare resources, especially Neon gas and Helium gas, and its solution technology to support semiconductor industry will be discussed.

  20. Fundamental atomic plasma chemistry for semiconductor manufacturing process analysis

    International Nuclear Information System (INIS)

    Ventzek, P.L.G.; Zhang, D.; Stout, P.J.; Rauf, S.; Orlowski, M.; Kudrya, V.; Astapenko, V.; Eletskii, A.

    2002-01-01

    An absence of fundamental atomic plasma chemistry data (e.g. electron impact cross-sections) hinders the application of plasma process models in semiconductor manufacturing. Of particular importance is excited state plasma chemistry data for metallization applications. This paper describes important plasma chemistry processes in the context of high density plasmas for metallization application and methods for the calculation of data for the study of these processes. Also discussed is the development of model data sets that address computational tractability issues. Examples of model electron impact cross-sections for Ni reduced from multiple collision processes are presented

  1. A modern depleted uranium manufacturing facility

    International Nuclear Information System (INIS)

    Zagula, T.A.

    1995-07-01

    The Specific Manufacturing Capabilities (SMC) Project located at the Idaho National Engineering Laboratory (INEL) and operated by Lockheed Martin Idaho Technologies Co. (LMIT) for the Department of Energy (DOE) manufactures depleted uranium for use in the U.S. Army MIA2 Abrams Heavy Tank Armor Program. Since 1986, SMC has fabricated more than 12 million pounds of depleted uranium (DU) products in a multitude of shapes and sizes with varying metallurgical properties while maintaining security, environmental, health and safety requirements. During initial facility design in the early 1980's, emphasis on employee safety, radiation control and environmental consciousness was gaining momentum throughout the DOE complex. This fact coupled with security and production requirements forced design efforts to focus on incorporating automation, local containment and computerized material accountability at all work stations. The result was a fully automated production facility engineered to manufacture DU armor packages with virtually no human contact while maintaining security, traceability and quality requirements. This hands off approach to handling depleted uranium resulted in minimal radiation exposures and employee injuries. Construction of the manufacturing facility was complete in early 1986 with the first armor package certified in October 1986. Rolling facility construction was completed in 1987 with the first certified plate produced in the fall of 1988. Since 1988 the rolling and manufacturing facilities have delivered more than 2600 armor packages on schedule with 100% final product quality acceptance. During this period there was an annual average of only 2.2 lost time incidents and a single individual maximum radiation exposure of 150 mrem. SMC is an example of designing and operating a facility that meets regulatory requirements with respect to national security, radiation control and personnel safety while achieving production schedules and product quality

  2. Progress in ion implantation equipment for semiconductor manufacturing

    International Nuclear Information System (INIS)

    Kawai, Tadashi; Naito, Masao

    1987-01-01

    In the semiconductor device manufacturing industry, ion implantation systems are used to dope semiconductor substrates with impurities that act as donor or acceptor. In an ion implantation system, required impurity ions are generated from an ion source, subjected to mass analysis, accelerated, converged and implanted in semiconductor wafers. High-tension arc tends to cause troubles in these systems, but improvement in design increased the average operation rate of medium-power systems from bout 70 percent to 90 percent during the past 10 years. Freeman type ion sources have replaced most RF ion sources and cold cathode PIG sources, which had been widely used until the early 1970s. Many of the recent ion sources are equipped with a P and As vaporizer to increase the beam intensity. By an increased beam intensity or decreased handling time in combination with an automatic handling system, the throughput has reached 330 wafers per hour for 10 second implantation. The yield has increased due to the development of improved scanning methods, vacuum devices such as cryopump, and processes and apparatus that serve for preventing particles from being contained in micro-devices. Various other improvements have been made to permit efficient production. (Nogami, K.)

  3. Manufacturing Demonstration Facility: Roll-to-Roll Processing

    Energy Technology Data Exchange (ETDEWEB)

    Datskos, Panos G [ORNL; Joshi, Pooran C [ORNL; List III, Frederick Alyious [ORNL; Duty, Chad E [ORNL; Armstrong, Beth L [ORNL; Ivanov, Ilia N [ORNL; Jacobs, Christopher B [ORNL; Graham, David E [ORNL; Moon, Ji Won [ORNL

    2015-08-01

    This Manufacturing Demonstration Facility (MDF)e roll-to-roll processing effort described in this report provided an excellent opportunity to investigate a number of advanced manufacturing approaches to achieve a path for low cost devices and sensors. Critical to this effort is the ability to deposit thin films at low temperatures using nanomaterials derived from nanofermentation. The overarching goal of this project was to develop roll-to-roll manufacturing processes of thin film deposition on low-cost flexible substrates for electronics and sensor applications. This project utilized ORNL s unique Pulse Thermal Processing (PTP) technologies coupled with non-vacuum low temperature deposition techniques, ORNL s clean room facility, slot dye coating, drop casting, spin coating, screen printing and several other equipment including a Dimatix ink jet printer and a large-scale Kyocera ink jet printer. The roll-to-roll processing project had three main tasks: 1) develop and demonstrate zinc-Zn based opto-electronic sensors using low cost nanoparticulate structures manufactured in a related MDF Project using nanofermentation techniques, 2) evaluate the use of silver based conductive inks developed by project partner NovaCentrix for electronic device fabrication, and 3) demonstrate a suite of low cost printed sensors developed using non-vacuum deposition techniques which involved the integration of metal and semiconductor layers to establish a diverse sensor platform technology.

  4. Advanced excimer laser technologies enable green semiconductor manufacturing

    Science.gov (United States)

    Fukuda, Hitomi; Yoo, Youngsun; Minegishi, Yuji; Hisanaga, Naoto; Enami, Tatsuo

    2014-03-01

    "Green" has fast become an important and pervasive topic throughout many industries worldwide. Many companies, especially in the manufacturing industries, have taken steps to integrate green initiatives into their high-level corporate strategies. Governments have also been active in implementing various initiatives designed to increase corporate responsibility and accountability towards environmental issues. In the semiconductor manufacturing industry, there are growing concerns over future environmental impact as enormous fabs expand and new generation of equipments become larger and more powerful. To address these concerns, Gigaphoton has implemented various green initiatives for many years under the EcoPhoton™ program. The objective of this program is to drive innovations in technology and services that enable manufacturers to significantly reduce both the financial and environmental "green cost" of laser operations in high-volume manufacturing environment (HVM) - primarily focusing on electricity, gas and heat management costs. One example of such innovation is Gigaphoton's Injection-Lock system, which reduces electricity and gas utilization costs of the laser by up to 50%. Furthermore, to support the industry's transition from 300mm to the next generation 450mm wafers, technologies are being developed to create lasers that offer double the output power from 60W to 120W, but reducing electricity and gas consumption by another 50%. This means that the efficiency of lasers can be improve by up to 4 times in 450mm wafer production environments. Other future innovations include the introduction of totally Heliumfree Excimer lasers that utilize Nitrogen gas as its replacement for optical module purging. This paper discusses these and other innovations by Gigaphoton to enable green manufacturing.

  5. Decommissioning plan depleted uranium manufacturing facility

    International Nuclear Information System (INIS)

    Bernhardt, D.E.; Pittman, J.D.; Prewett, S.V.

    1987-01-01

    Aerojet Ordnance Tennessee, Inc. (Aerojet) is decommissioning its California depleted uranium (DU) manufacturing facility. Aerojet has conducted manufacturing and research and development activities at the facility since 1977 under a State of California Source Materials License. The decontamination is being performed by a contractor selector for technical competence through competitive bid. Since the facility will be released for uncontrolled use it will be decontaminated to levels as low as reasonably achievable (ALARA). In order to fully apply the principles of ALARA, and ensure the decontamination is in full compliance with appropriate guides, Aerojet has retained Rogers and Associaties Engineering Corporation (RAE) to assist in the decommissioning. RAE has assisted in characterizing the facility and preparing contract bid documents and technical specifications to obtain a qualified decontamination contractor. RAE will monitor the decontamination work effort to assure the contractor's performance complies with the contract specifications and the decontamination plan. The specifications require a thorough cleaning and decontamination of the facility, not just sufficient cleaning to meet the numeric cleanup criteria

  6. Materials, Processes, and Facile Manufacturing for Bioresorbable Electronics: A Review.

    Science.gov (United States)

    Yu, Xiaowei; Shou, Wan; Mahajan, Bikram K; Huang, Xian; Pan, Heng

    2018-05-07

    Bioresorbable electronics refer to a new class of advanced electronics that can completely dissolve or disintegrate with environmentally and biologically benign byproducts in water and biofluids. They have provided a solution to the growing electronic waste problem with applications in temporary usage of electronics such as implantable devices and environmental sensors. Bioresorbable materials such as biodegradable polymers, dissolvable conductors, semiconductors, and dielectrics are extensively studied, enabling massive progress of bioresorbable electronic devices. Processing and patterning of these materials are predominantly relying on vacuum-based fabrication methods so far. However, for the purpose of commercialization, nonvacuum, low-cost, and facile manufacturing/printing approaches are the need of the hour. Bioresorbable electronic materials are generally more chemically reactive than conventional electronic materials, which require particular attention in developing the low-cost manufacturing processes in ambient environment. This review focuses on material reactivity, ink availability, printability, and process compatibility for facile manufacturing of bioresorbable electronics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Manufacturing Demonstration Facility: Low Temperature Materials Synthesis

    International Nuclear Information System (INIS)

    Graham, David E.; Moon, Ji-Won; Armstrong, Beth L.; Datskos, Panos G.; Duty, Chad E.; Gresback, Ryan; Ivanov, Ilia N.; Jacobs, Christopher B.; Jellison, Gerald Earle; Jang, Gyoung Gug; Joshi, Pooran C.; Jung, Hyunsung; Meyer, Harry M.; Phelps, Tommy

    2015-01-01

    The Manufacturing Demonstration Facility (MDF) low temperature materials synthesis project was established to demonstrate a scalable and sustainable process to produce nanoparticles (NPs) for advanced manufacturing. Previous methods to chemically synthesize NPs typically required expensive, high-purity inorganic chemical reagents, organic solvents and high temperatures. These processes were typically applied at small laboratory scales at yields sufficient for NP characterization, but insufficient to support roll-to-roll processing efforts or device fabrication. The new NanoFermentation processes described here operated at a low temperature (~60 C) in low-cost, aqueous media using bacteria that produce extracellular NPs with controlled size and elemental stoichiometry. Up-scaling activities successfully demonstrated high NP yields and quality in a 900-L pilot-scale reactor, establishing this NanoFermentation process as a competitive biomanufacturing strategy to produce NPs for advanced manufacturing of power electronics, solid-state lighting and sensors.

  8. Manufacturing Demonstration Facility: Low Temperature Materials Synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Graham, David E. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Moon, Ji-Won [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Armstrong, Beth L. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Datskos, Panos G. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Duty, Chad E. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Gresback, Ryan [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Ivanov, Ilia N. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Jacobs, Christopher B. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Jellison, Gerald Earle [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Jang, Gyoung Gug [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Joshi, Pooran C. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Jung, Hyunsung [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Meyer, III, Harry M. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Phelps, Tommy [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-06-30

    The Manufacturing Demonstration Facility (MDF) low temperature materials synthesis project was established to demonstrate a scalable and sustainable process to produce nanoparticles (NPs) for advanced manufacturing. Previous methods to chemically synthesize NPs typically required expensive, high-purity inorganic chemical reagents, organic solvents and high temperatures. These processes were typically applied at small laboratory scales at yields sufficient for NP characterization, but insufficient to support roll-to-roll processing efforts or device fabrication. The new NanoFermentation processes described here operated at a low temperature (~60 C) in low-cost, aqueous media using bacteria that produce extracellular NPs with controlled size and elemental stoichiometry. Up-scaling activities successfully demonstrated high NP yields and quality in a 900-L pilot-scale reactor, establishing this NanoFermentation process as a competitive biomanufacturing strategy to produce NPs for advanced manufacturing of power electronics, solid-state lighting and sensors.

  9. Microeconomics of yield learning and process control in semiconductor manufacturing

    Science.gov (United States)

    Monahan, Kevin M.

    2003-06-01

    Simple microeconomic models that directly link yield learning to profitability in semiconductor manufacturing have been rare or non-existent. In this work, we review such a model and provide links to inspection capability and cost. Using a small number of input parameters, we explain current yield management practices in 200mm factories. The model is then used to extrapolate requirements for 300mm factories, including the impact of technology transitions to 130nm design rules and below. We show that the dramatic increase in value per wafer at the 300mm transition becomes a driver for increasing metrology and inspection capability and sampling. These analyses correlate well wtih actual factory data and often identify millions of dollars in potential cost savings. We demonstrate this using the example of grating-based overlay metrology for the 65nm node.

  10. 14 CFR 21.43 - Location of manufacturing facilities.

    Science.gov (United States)

    2010-01-01

    ... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Location of manufacturing facilities. 21.43... CERTIFICATION PROCEDURES FOR PRODUCTS AND PARTS Type Certificates § 21.43 Location of manufacturing facilities... location of the manufacturer's facilities places no undue burden on the FAA in administering applicable...

  11. Big Data Analytics for Smart Manufacturing: Case Studies in Semiconductor Manufacturing

    Directory of Open Access Journals (Sweden)

    James Moyne

    2017-07-01

    Full Text Available Smart manufacturing (SM is a term generally applied to the improvement in manufacturing operations through integration of systems, linking of physical and cyber capabilities, and taking advantage of information including leveraging the big data evolution. SM adoption has been occurring unevenly across industries, thus there is an opportunity to look to other industries to determine solution and roadmap paths for industries such as biochemistry or biology. The big data evolution affords an opportunity for managing significantly larger amounts of information and acting on it with analytics for improved diagnostics and prognostics. The analytics approaches can be defined in terms of dimensions to understand their requirements and capabilities, and to determine technology gaps. The semiconductor manufacturing industry has been taking advantage of the big data and analytics evolution by improving existing capabilities such as fault detection, and supporting new capabilities such as predictive maintenance. For most of these capabilities: (1 data quality is the most important big data factor in delivering high quality solutions; and (2 incorporating subject matter expertise in analytics is often required for realizing effective on-line manufacturing solutions. In the future, an improved big data environment incorporating smart manufacturing concepts such as digital twin will further enable analytics; however, it is anticipated that the need for incorporating subject matter expertise in solution design will remain.

  12. Dispatching capacity in manufacturing facility offshoring

    DEFF Research Database (Denmark)

    Madsen, Erik Skov; Knudsen, Mette Præst

    2010-01-01

    This paper investigates how a dispatching capacity of motivation, relational dynamics and structures seen from the sending context influence the entire knowledge transfer process in manufacturing facility offshoring. An inductive and qualitative approach is taken and five main themes are derived...... from the four empirical cases. In the discussion, the five themes i.e. extra tasks, previous experiences, involvement of all groups of employees, teaching skills and organizational support in the dispatching context are linked with a theoretical model leading to the identification of seven testable...

  13. Dissolved air flotation of polishing wastewater from semiconductor manufacturer.

    Science.gov (United States)

    Liu, J C; Lien, C Y

    2006-01-01

    The feasibility of the dissolved air flotation (DAF) process in treating chemical mechanical polishing (CMP) wastewater was evaluated in this study. Wastewater from a local semiconductor manufacturer was sampled and characterised. Nano-sized silica (77.6 nm) with turbidity of 130 +/- 3 NTU was found in the slightly alkaline wastewater with traces of other pollutants. Experimental results indicated removal efficiency of particles, measured as suspended particle or turbidity, increased with increasing concentration of cationic collector cetyltrimethyl ammonium bromide (CTAB). When CTAB concentration was 30 mg/L, pH of 6.5 +/- 0.1 and recycle ratio of 30%, very effective removal of particles (> 98%) was observed in saturation pressure range of 4 to 6 kg/cm2, and the reaction proceeded faster under higher pressure. Similarly, the reaction was faster under the higher recycle ratio, while final removal efficiency improved slightly as the recycle ratio increased from 20 to 40%. An insignificant effect of pH on treatment efficiency was found as pH varied from 4.5 to 8.5. The presence of activator, Al3+ and Fe3+, enhanced the system performance. It is proposed that CTAB adsorbs on silica particles in polishing wastewater through electrostatic interaction and makes particles more hydrophobic. The increase in hydrophobicity results in more effective bubble-particle collisions. In addition, flocculation of silica particles through bridging effect of collector was found; it is believed that flocculation of particles also contributed to flotation. Better attachment between gas bubble and solid, higher buoyancy and higher air to solid ratio all lead to effective flotation.

  14. 77 FR 48992 - Tobacco Product Manufacturing Facility Visits

    Science.gov (United States)

    2012-08-15

    ... manufacture, preproduction design validation (including a process to assess the performance of a tobacco... about the manufacturing practices and processes unique to your facility and regulated tobacco products... process, package, label, and distribute different types of regulated tobacco products (cigarettes...

  15. Semiconductor device and method of manufacturing the same

    NARCIS (Netherlands)

    2009-01-01

    The invention relates to a semiconductor device (10) with a semiconductor body (12) comprising a bipolar transistor with an emitter region, a base region and a collector region (1, 2, 3) of, respectively, a first conductivity type, a second conductivity type opposite to the first conductivity type,

  16. A system approach to controlling semiconductor manufacturing operations

    OpenAIRE

    Σταυράκης, Γιώργος Δ.

    1987-01-01

    Semicoductor manufacturers, faced with stiffening competition in both product cost and quality, require improved utilization of their development and manufacturing resources. Manufacturing philosophy must be changed, from focusing on short term results, to support continuous improvements in both output and quality. Such improvements demand better information management to monitor and control the manufacturing process. From these considerations, a process control methodology was develope...

  17. New era of silicon technologies due to radical reaction based semiconductor manufacturing

    International Nuclear Information System (INIS)

    Ohmi, Tadahiro; Hirayama, Masaki; Teramoto, Akinobu

    2006-01-01

    Current semiconductor technology, the so-called the molecule reaction based semiconductor manufacturing, now faces a very severe standstill due to the drastic increase of gate leakage currents and drain leakage currents. Radical reaction based semiconductor manufacturing has been developed to completely overcome the current standstill by introducing microwave excited high density plasma with very low electron temperatures and without accompanying charge-up damage. The introduction of radical reaction based semiconductor manufacturing has made it possible to fabricate LSI devices on any crystal orientation Si substrate surface as well as (100) Si substrate surfaces, and to eliminate a very severe limitation to the antenna ratio in the circuit layout patterns, which is strictly limited to less than 100-200 in order to obtain a relatively high production yield. (topical review)

  18. Nanoimprint system development and status for high volume semiconductor manufacturing

    Science.gov (United States)

    Hiura, Hiromi; Takabayashi, Yukio; Takashima, Tsuneo; Emoto, Keiji; Choi, Jin; Schumaker, Phil

    2016-10-01

    Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash Imprint Lithography* (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are many criteria that determine whether a particular technology is ready for wafer manufacturing. For imprint lithography, recent attention has been given to the areas of overlay, throughput, defectivity, and mask replication. This paper reviews progress in these critical areas. Recent demonstrations have proven that mix and match overlay of less than 5nm can achieved. Further reductions require a higher order correction system. Modeling and experimental data are presented which provide a path towards reducing the overlay errors to less than 3nm. Throughput is mainly impacted by the fill time of the relief images on the mask. Improvement in resist materials provides a solution that allows 15 wafers per hour per station, or a tool throughput of 60 wafers per hour. Defectivity and mask life play a significant role relative to meeting the cost of ownership (CoO) requirements in the production of semiconductor devices. Hard particles on a wafer or mask create the possibility of inducing a permanent defect on the mask that can impact device yield and mask life. By using material methods to reduce particle shedding and by introducing an air curtain system, the lifetime of both the master mask and the replica mask can be extended. In this work, we report results that demonstrate a path towards achieving mask lifetimes of better than 1000 wafers. Finally, on the mask side, a new replication tool, the FPA-1100NR2 is

  19. 75 FR 879 - National Semiconductor Corporation Arlington Manufacturing Site Including On-Site Leased Workers...

    Science.gov (United States)

    2010-01-06

    ... engaged in activities related to the production of integrated circuits. The company reports that on-site... Corporation Arlington Manufacturing Site Including On-Site Leased Workers From GCA, CMPA (Silverleaf), Custom..., applicable to workers of National Semiconductor Corporation, Arlington Manufacturing Site, including on-site...

  20. EDITORIAL: Extreme Ultraviolet Light Sources for Semiconductor Manufacturing

    Science.gov (United States)

    Attwood, David

    2004-12-01

    The International Technology Roadmap for Semiconductors (ITRS) [1] provides industry expectations for high volume computer chip fabrication a decade into the future. It provides expectations to anticipated performance and requisite specifications. While the roadmap provides a collective projection of what international industry expects to produce, it does not specify the technology that will be employed. Indeed, there are generally several competing technologies for each two or three year step forward—known as `nodes'. Recent successful technologies have been based on KrF (248 nm), and now ArF (193 nm) lasers, combined with ultraviolet transmissive refractive optics, in what are known as step and scan exposure tools. Less fortunate technologies in the recent past have included soft x-ray proximity printing and, it appears, 157 nm wavelength F2 lasers. In combination with higher numerical aperture liquid emersion optics, 193 nm is expected to be used for the manufacture of leading edge chip performance for the coming five years. Beyond that, starting in about 2009, the technology to be employed is less clear. The leading candidate for the 2009 node is extreme ultraviolet (EUV) lithography, however this requires that several remaining challenges, including sufficient EUV source power, be overcome in a timely manner. This technology is based on multilayer coated reflective optics [2] and an EUV emitting plasma. Following Moore's Law [3] it is expected, for example, that at the 2009 `32 nm node' (printable patterns of 32 nm half-pitch), isolated lines with 18 nm width will be formed in resist (using threshold effects), and that these will be further narrowed to 13 nm in transfer to metalized electronic gates. These narrow features are expected to provide computer chips of 19 GHz clock frequency, with of the order of 1.5 billion transistors per chip [1]. This issue of Journal of Physics D: Applied Physics contains a cluster of eight papers addressing the critical

  1. A Review of Related Work on Machine Learning in Semiconductor Manufacturing and Assembly Lines

    OpenAIRE

    Stanisavljevic, Darko; Spitzer, Michael

    2017-01-01

    This paper deals with applications of machine learning algorithms in manufacturing. Machine learning can be defined as a field of computer science that gives computers the ability to learn without explicitly developing the needed algorithms. Manufacturing is the production of merchandise by manual labour, machines and tools. The focus of this paper is on automatic production lines. The areas of interest of this paper are semiconductor manufacturing and production on assembly lines. The purpos...

  2. Visit to China's ARJ21 Aircraft Manufacturing Facility

    National Research Council Canada - National Science Library

    Balut, Stephen J; McNicol, David L; Nelson, J. R; Harmon, Bruce R; Holder, Stephen G

    2008-01-01

    During a December 2007 visit to China to share information about civilian aircraft costs, a delegation from IDA visited the Shanghai Aircraft Manufacturing Facility where the commercial chinese ARJ21...

  3. Establishing a LEU MTR fuel manufacturing facility in South Africa

    International Nuclear Information System (INIS)

    Jamie, R.W.; Kocher, A.

    2010-01-01

    The South African MTR Fuel Manufacturing Facility was established in the 1970's to supply SAFARI-1 with Fuel Elements and Control Rods. South African capability was developed in parallel with the uranium enrichment program to meet the needs of the Reactor. Further to the July 2005 decision by the South African Governmnent to convert both SAFARI-1 and the Fuel Plant to LEU, the SAFARI-1 phase has been successfully completed and Necsa has commenced with the conversion of the MTR Fuel Manufacturing Facility. In order to establish, validate and qualify the facility, Necsa has entered into a co-operation and technology transfer agreement with AREVA CERCA, the French manufacturer of Research Reactor fuel elements. Past experiences, conversion challenges and the status of the MTR Fuel Facility Project are discussed. On-going co-operation with AREVA CERCA to implement the local manufacture of LEU fuel is explained and elaborated on. (author)

  4. A Systematic Cycle Time Reduction Procedure for Enhancing the Competitiveness and Sustainability of a Semiconductor Manufacturer

    Directory of Open Access Journals (Sweden)

    Toly Chen

    2013-11-01

    Full Text Available Cycle time reduction plays an important role in improving the competitiveness and sustainability of a semiconductor manufacturer. However, in the past, cycle time reduction was usually unplanned owing to the lack of a systematic and quantitative procedure. To tackle this problem, a systematic procedure was established in this study for planning cycle time reduction actions to enhance the competitiveness and sustainability of a semiconductor manufacturer. First, some controllable factors that are influential to the job cycle time are identified. Subsequently, the relationship between the controllable factors and the job cycle time is fitted with a back propagation network. Based on this relationship, actions to shorten the job cycle time can be planned. The feasibility and effectiveness of an action have to be assessed before it can be taken in practice. An example containing the real data of hundreds of jobs has been used to illustrate the applicability of the proposed methodology. In addition, the financial benefits of the cycle time reduction action were analyzed, which provided the evidence that the proposed methodology enabled the sustainable development of the semiconductor manufacturer, since capital adequacy is very important in the semiconductor manufacturing industry.

  5. Particle dispersing system and method for testing semiconductor manufacturing equipment

    Science.gov (United States)

    Chandrachood, Madhavi; Ghanayem, Steve G.; Cantwell, Nancy; Rader, Daniel J.; Geller, Anthony S.

    1998-01-01

    The system and method prepare a gas stream comprising particles at a known concentration using a particle disperser for moving particles from a reservoir of particles into a stream of flowing carrier gas. The electrostatic charges on the particles entrained in the carrier gas are then neutralized or otherwise altered, and the resulting particle-laden gas stream is then diluted to provide an acceptable particle concentration. The diluted gas stream is then split into a calibration stream and the desired output stream. The particles in the calibration stream are detected to provide an indication of the actual size distribution and concentration of particles in the output stream that is supplied to a process chamber being analyzed. Particles flowing out of the process chamber within a vacuum pumping system are detected, and the output particle size distribution and concentration are compared with the particle size distribution and concentration of the calibration stream in order to determine the particle transport characteristics of a process chamber, or to determine the number of particles lodged in the process chamber as a function of manufacturing process parameters such as pressure, flowrate, temperature, process chamber geometry, particle size, particle charge, and gas composition.

  6. Carbon Fiber Manufacturing Facility Siting and Policy Considerations: International Comparison

    Energy Technology Data Exchange (ETDEWEB)

    Cook, Jeffrey J. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Booth, Samuel [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2017-06-21

    Carbon fiber is increasingly used in a wide variety of applications due largely to its superior material properties such as high strength-to-weight ratio. The current global carbon fiber manufacturing industry is predominately located in China, Europe, Japan, and the United States. The carbon fiber market is expected to expand significantly through 2024 and to require additional manufacturing capacity to meet demand. Carbon fiber manufacturing facilities can offer significant economic development and employment opportunities as exemplified by the $1 billion investment and 500 jobs expected at a new Toray plant in Moore, South Carolina. Though the market is expected to expand, it is unclear where new manufacturing facilities will locate to meet demand. This uncertainty stems from the lack of research evaluating how different nations with significant carbon fiber manufacturing capacity compare as it relates to certain manufacturing facility siting factors such as costs of labor and energy as well as policy directed at supporting carbon fiber development, domestic deployment, and exports. This report fills these gaps by evaluating the top carbon fiber manufacturing countries, including China, European Union countries, Japan, Mexico, South Korea, Taiwan, and the United States. The report documents how the United States compares to these countries based on a range of manufacturing siting considerations and existing policies related to carbon fiber. It concludes with a discussion of various policy options the United States could adopt to both (1) increase the competitiveness of the United States as it relates to attracting new carbon fiber manufacturing and (2) foster broader end-use markets for deployment.

  7. SETEC/Semiconductor Manufacturing Technologies Program: 1999 Annual and Final Report

    Energy Technology Data Exchange (ETDEWEB)

    MCBRAYER,JOHN D.

    2000-12-01

    This report summarizes the results of work conducted by the Semiconductor Manufacturing Technologies Program at Sandia National Laboratories (Sandia) during 1999. This work was performed by one working group: the Semiconductor Equipment Technology Center (SETEC). The group's projects included Numerical/Experimental Characterization of the Growth of Single-Crystal Calcium Fluoride (CaF{sub 2}); The Use of High-Resolution Transmission Electron Microscopy (HRTEM) Imaging for Certifying Critical-Dimension Reference Materials Fabricated with Silicon Micromachining; Assembly Test Chip for Flip Chip on Board; Plasma Mechanism Validation: Modeling and Experimentation; and Model-Based Reduction of Contamination in Gate-Quality Nitride Reactor. During 1999, all projects focused on meeting customer needs in a timely manner and ensuring that projects were aligned with the goals of the National Technology Roadmap for Semiconductors sponsored by the Semiconductor Industry Association and with Sandia's defense mission. This report also provides a short history of the Sandia/SEMATECH relationship and a brief on all projects completed during the seven years of the program.

  8. Product manufacturing, quality, and reliability initiatives to maintain a competitive advantage and meet customer expectations in the semiconductor industry

    Science.gov (United States)

    Capps, Gregory

    Semiconductor products are manufactured and consumed across the world. The semiconductor industry is constantly striving to manufacture products with greater performance, improved efficiency, less energy consumption, smaller feature sizes, thinner gate oxides, and faster speeds. Customers have pushed towards zero defects and require a more reliable, higher quality product than ever before. Manufacturers are required to improve yields, reduce operating costs, and increase revenue to maintain a competitive advantage. Opportunities exist for integrated circuit (IC) customers and manufacturers to work together and independently to reduce costs, eliminate waste, reduce defects, reduce warranty returns, and improve quality. This project focuses on electrical over-stress (EOS) and re-test okay (RTOK), two top failure return mechanisms, which both make great defect reduction opportunities in customer-manufacturer relationship. Proactive continuous improvement initiatives and methodologies are addressed with emphasis on product life cycle, manufacturing processes, test, statistical process control (SPC), industry best practices, customer education, and customer-manufacturer interaction.

  9. Prolonged menstrual cycles in female workers exposed to ethylene glycol ethers in the semiconductor manufacturing industry.

    Science.gov (United States)

    Hsieh, G-Y; Wang, J-D; Cheng, T-J; Chen, P-C

    2005-08-01

    It has been shown that female workers exposed to ethylene glycol ethers (EGEs) in the semiconductor industry have higher risks of spontaneous abortion, subfertility, and menstrual disturbances, and prolonged waiting time to pregnancy. To examine whether EGEs or other chemicals are associated with long menstrual cycles in female workers in the semiconductor manufacturing industry. Cross-sectional questionnaire survey during the annual health examination at a wafer manufacturing company in Taiwan in 1997. A three tiered exposure-assessment strategy was used to analyse the risk. A short menstrual cycle was defined to be a cycle less than 24 days and a long cycle to be more than 35 days. There were 606 valid questionnaires from 473 workers in fabrication jobs and 133 in non-fabrication areas. Long menstrual cycles were associated with workers in fabrication areas compared to those in non-fabrication areas. Using workers in non-fabrication areas as referents, workers in photolithography and diffusion areas had higher risks for long menstrual cycles. Workers exposed to EGEs and isopropanol, and hydrofluoric acid, isopropanol, and phosphorous compounds also showed increased risks of a long menstrual cycle. Exposure to multiple chemicals, including EGEs in photolithography, might be associated with long menstrual cycles, and may play an important role in a prolonged time to pregnancy in the wafer manufacturing industry; however, the prevalence in the design, possible exposure misclassification, and chance should be considered.

  10. 76 FR 59542 - Mandatory Reporting of Greenhouse Gases: Changes to Provisions for Electronics Manufacturing To...

    Science.gov (United States)

    2011-09-27

    ... Mandatory Reporting of Greenhouse Gases: Changes to Provisions for Electronics Manufacturing To Provide... regulation to amend the calculation and monitoring provisions in the Electronics Manufacturing portion of the... Electronics Manufacturing 334111 Microcomputer manufacturing facilities. 334413 Semiconductor, photovoltaic...

  11. Analytical chemistry in semiconductor manufacturing: Techniques, role of nuclear methods and need for quality control

    International Nuclear Information System (INIS)

    1989-06-01

    This report is the result of a consultants meeting held in Gaithersburg, USA, 2-3 October 1987. The meeting was hosted by the National Bureau of Standards and Technology, and it was attended by 18 participants from Denmark, Finland, India, Japan, Norway, People's Republic of China and the USA. The purpose of the meeting was to assess the present status of analytical chemistry in semiconductor manufacturing, the role of nuclear analytical methods and the need for internationally organized quality control of the chemical analysis. The report contains the three presentations in full and a summary report of the discussions. Thus, it gives an overview of the need of analytical chemistry in manufacturing of silicon based devices, the use of nuclear analytical methods, and discusses the need for quality control. Refs, figs and tabs

  12. Installation of Tc-99m generator manufacturing facilities

    International Nuclear Information System (INIS)

    Shin, B. C.; Choung, W. M.; Park, J. H.; Park, S. H.; Kim, S. J.; Park, K. B.

    2004-01-01

    For the characteristics of radiopharmaceuticals, the manufacturing facility should be complied with the radiation safety standards for operators as well as GMP (Good Manufacturing Practice) cleanness standards for production. We intensively modified the existing Radioisotope production facilities, which were installed only in radiation safety points of view, to meet cleanness criteria. And the concept of multi-barrier buffer zones was introduced to apply negative air pressure for hot cell with first priority and to continue relative positive air pressure for clean room. The manufacturing area for Tc-99m Generator can be entered only through a second change. The doors of each change area are interlocked to maintain air pressure differentials. The pass box for material transfer are also interlocked so that only one side may be opened at any one time to keep cleanness. Two door-type autoclave was installed crossing the wall between preparing room and aseptic room to keep cleanness after sterilization. Three lead hot cells were installed and final inspection including gamma survey test were performed. The clean room was installed and TAB for this facility was performed in order to acquire the necessary air flow. The filter bank for filtration of exhausted radiation air was installed and its efficiency test was performed. In this facility, radiation shielding utilities and manufacturing instruments were set up and their operating manuals were documented. Efficiency tests for every utilities and instruments were satisfied and the approval for use of the facilities was achieved from MOST (Ministry of Science and Technology). The Sam Young Unitech, the lessee of the facilities set up the equipment in the hot cell, which is needed to produce Tc-99m Generator, supported by IPPE in Russia. They are composing the systems complied with the guidelines and the regulations, and keep in contact to KFDA for acquiring its approval. It is expected to produce Tc-99m Generator within

  13. 10 CFR 611.202 - Advanced Technology Vehicle Manufacturing Facility Award Program.

    Science.gov (United States)

    2010-01-01

    ... 10 Energy 4 2010-01-01 2010-01-01 false Advanced Technology Vehicle Manufacturing Facility Award... TECHNOLOGY VEHICLES MANUFACTURER ASSISTANCE PROGRAM Facility/Funding Awards § 611.202 Advanced Technology Vehicle Manufacturing Facility Award Program. DOE may issue, under the Advanced Technology Vehicle...

  14. An Assessment of Critical Dimension Small Angle X-ray Scattering Metrology for Advanced Semiconductor Manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Settens, Charles M. [State Univ. of New York (SUNY), Albany, NY (United States)

    2015-01-01

    Simultaneous migration of planar transistors to FinFET architectures, the introduction of a plurality of materials to ensure suitable electrical characteristics, and the establishment of reliable multiple patterning lithography schemes to pattern sub-10 nm feature sizes imposes formidable challenges to current in-line dimensional metrologies. Because the shape of a FinFET channel cross-section immediately influences the electrical characteristics, the evaluation of 3D device structures requires measurement of parameters beyond traditional critical dimension (CD), including their sidewall angles, top corner rounding and footing, roughness, recesses and undercuts at single nanometer dimensions; thus, metrologies require sub-nm and approaching atomic level measurement uncertainty. Synchrotron critical dimension small angle X-ray scattering (CD-SAXS) has unique capabilities to non-destructively monitor the cross-section shape of surface structures with single nanometer uncertainty and can perform overlay metrology to sub-nm uncertainty. In this dissertation, we perform a systematic experimental investigation using CD-SAXS metrology on a hierarchy of semiconductor 3D device architectures including, high-aspect-ratio contact holes, H2 annealed Si fins, and a series of grating type samples at multiple points along a FinFET fabrication process increasing in structural intricacy and ending with fully fabricated FinFET. Comparative studies between CD-SAXS metrology and other relevant semiconductor dimensional metrologies, particularly CDSEM, CD-AFM and TEM are used to determine physical limits of CD-SAXS approach for advanced semiconductor samples. CD-SAXS experimental tradeoffs, advice for model-dependent analysis and thoughts on the compatibility with a semiconductor manufacturing environment are discussed.

  15. `Climate wise` program at the Cosmair, Inc. Clark Manufacturing Facility

    Energy Technology Data Exchange (ETDEWEB)

    Kraly, K.

    1997-12-31

    Viewgraphs from the conference presentation are reproduced in this paper, which outlines energy efficiency improvements and emissions reductions at a hair care products manufacturing facility. Program management focuses on employee involvement in internal audits, utility tracking, public relations, and preventative maintenance. Energy savings, cost savings, and emission reductions are presented for 1996 and projected to the year 2000. Other program aspects outlined include a summary of utility costs; solid waste; chilled water system modifications; lighting modifications; boiler upgrades; and heating, ventilating, and air conditioning improvements.

  16. Exposure Characteristics of Nanoparticles as Process By-products for the Semiconductor Manufacturing Industry.

    Science.gov (United States)

    Choi, Kwang-Min; Kim, Jin-Ho; Park, Ju-Hyun; Kim, Kwan-Sick; Bae, Gwi-Nam

    2015-01-01

    This study aims to elucidate the exposure properties of nanoparticles (NPs; semiconductor manufacturing processes. The measurements of airborne NPs were mainly performed around process equipment during fabrication processes and during maintenance. The number concentrations of NPs were measured using a water-based condensation particle counter having a size range of 10-3,000 nm. The chemical composition, size, and shape of NPs were determined by scanning electron microscopy and transmission electron microscopy techniques equipped with energy dispersive spectroscopy. The resulting concentrations of NPs ranged from 0.00-11.47 particles/cm(3). The concentration of NPs measured during maintenance showed a tendency to increase, albeit incrementally, compared to that measured during normal conditions (under typical process conditions without maintenance). However, the increment was small. When comparing the mean number concentration and standard deviation (n ± σ) of NPs, the chemical mechanical polishing (CMP) process was the highest (3.45 ± 3.65 particles/cm(3)), and the dry etch (ETCH) process was the lowest (0.11 ± 0.22 particles/cm(3)). The major NPs observed were silica (SiO2) and titania (TiO2) particles, which were mainly spherical agglomerates ranging in size from 25-280 nm. Sampling of semiconductor processes in CMP, chemical vapor deposition, and ETCH reveled NPs were particle size exceeded 100 nm in diffusion, metallization, ion implantation, and wet cleaning/etching process. The results show that the SiO2 and TiO2 are the major NPs present in semiconductor cleanroom environments.

  17. Tungsten and other heavy metal contamination in aquatic environments receiving wastewater from semiconductor manufacturing

    International Nuclear Information System (INIS)

    Hsu, Shih-Chieh; Hsieh, Hwey-Lian; Chen, Chang-Po; Tseng, Chun-Mao; Huang, Shou-Chung; Huang, Chou-Hao; Huang, Yi-Tang; Radashevsky, Vasily; Lin, Shuen-Hsin

    2011-01-01

    Through analyses of water and sediments, we investigate tungsten and 14 other heavy metals in a stream receiving treated effluents from a semiconductor manufacturer-clustered science park in Taiwan. Treated effluents account for ∼50% of total annual river discharge and <1% of total sediment discharge. Dissolved tungsten concentrations in the effluents abnormally reach 400 μg/L, as compared to the world river average concentration of <0.1 μg/L. Particulate tungsten concentrations are up to 300 μg/g in suspended and deposited sediments, and the corresponding enrichment factors are three orders of magnitude higher than average crust composition. Surprisingly, the estimated amount of tungsten exported to the adjacent ocean is 23.5 t/yr, which can approximate the amount from the Yangtze River should it be unpolluted. This study highlights the urgency of investigating the biological effect of such contamination.

  18. Characterization of exposure to silver nanoparticles in a manufacturing facility

    Science.gov (United States)

    Park, Junsu; Kwak, Byoung Kyu; Bae, Eunjoo; Lee, Jeongjin; Kim, Younghun; Choi, Kyunghee; Yi, Jongheop

    2009-10-01

    An assessment of the extent of exposure to nanomaterials in the workplace will be helpful in improving the occupational safety of workers. It is essential that the exposure data in the workplace are concerned with risk management to evaluate and reduce worker exposure. In a manufacturing facility dealing with nanomaterials, some exposure data for gas-phase reactions are available, but much less information is available regarding liquid-phase reactions. Although the potential for inhaling nanomaterials in a liquid-phase process is less than that for gas-phase, the risks of exposure during wet-chemistry processes are not negligible. In this study, we monitored and analyzed the exposure characteristics of silver nanoparticles during a liquid-phase process in a commercial production facility. Based on the measured exposure data, the source of Ag nanoparticles emitted during the production processes was indentified and a mechanism for the growth of Ag nanoparticle released is proposed. The data reported in this study could be used to establish occupational safety guidelines in the nanotechnology workplace, especially in a liquid-phase production facility.

  19. Based on Weibull Information Fusion Analysis Semiconductors Quality the Key Technology of Manufacturing Execution Systems Reliability

    Science.gov (United States)

    Huang, Zhi-Hui; Tang, Ying-Chun; Dai, Kai

    2016-05-01

    Semiconductor materials and Product qualified rate are directly related to the manufacturing costs and survival of the enterprise. Application a dynamic reliability growth analysis method studies manufacturing execution system reliability growth to improve product quality. Refer to classical Duane model assumptions and tracking growth forecasts the TGP programming model, through the failure data, established the Weibull distribution model. Combining with the median rank of average rank method, through linear regression and least squares estimation method, match respectively weibull information fusion reliability growth curve. This assumption model overcome Duane model a weakness which is MTBF point estimation accuracy is not high, through the analysis of the failure data show that the method is an instance of the test and evaluation modeling process are basically identical. Median rank in the statistics is used to determine the method of random variable distribution function, which is a good way to solve the problem of complex systems such as the limited sample size. Therefore this method has great engineering application value.

  20. Specifying and manufacturing piping for the fast flux test facility

    International Nuclear Information System (INIS)

    Moen, R.A.; O'Keefe, D.P.; Irvin, J.E.; Tobin, J.C.

    1974-01-01

    Specification of materials for liquid metal reactor coolant piping, at service temperatures up to 1200 0 F, involves a number of considerations unique to these systems. The mechanical property/design allowable stress considerations which led to the selection and specification of specific materials for the Fast Flux Test Facility piping are discussed. Additional considerations are described indicating allowances made for material changes anticipated in service. These measures primarily involved raising the minimum carbon content to a value that would insure the strength of the material always remains above that assumed in the initial design, although other considerations are discussed. The processes by which this piping was manufactured, its resulting characteristics and methods of subsequent handling/assembly are briefly discussed. (U.S.)

  1. Productivity improvement through industrial engineering in the semiconductor industry

    Science.gov (United States)

    Meyersdorf, Doron

    1996-09-01

    Industrial Engineering is fairly new to the semiconductor industry, though the awareness to its importance has increased in recent years. The US semiconductor industry in particular has come to the realization that in order to remain competitive in the global market it must take the lead not only in product development but also in manufacturing. Industrial engineering techniques offer one ofthe most effective strategies for achieving manufacturing excellence. Industrial engineers play an important role in the success of the manufacturing facility. This paper defines the Industrial engineers role in the IC facility, set the visions of excellence in semiconductor manufacturing and highlights 10 roadblocks on the journey towards manufacturing excellence.

  2. Fact Sheet for Friction Materials Manufacturing Facilities Residual Risk and Technology Review

    Science.gov (United States)

    proposed amendments to the National Emission Standards for Hazardous Air Pollutants (NESHAP) for Friction Materials Manufacturing Facilities to address the results of the residual risk and technology review

  3. Semiconductor sensor device, diagnostic instrument comprising such a device and method of manufacturing such a device

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor sensor device (10) for sensing a substance comprising at least one mesa- shaped semiconductor region (11) which is formed on a surface of a semiconductor body (12) and which is connected at a first end to a first electrically conducting connection region (13)

  4. Adsorption treatment of oxide chemical mechanical polishing wastewater from a semiconductor manufacturing plant by electrocoagulation

    Energy Technology Data Exchange (ETDEWEB)

    Chou, Wei-Lung, E-mail: wlchou@sunrise.hk.edu.tw [Department of Safety, Health and Environmental Engineering, Hungkuang University, No. 34, Chung-Chie Road, Sha-Lu, Taichung 433, Taiwan (China); Wang, Chih-Ta [Department of Safety Health and Environmental Engineering, Chung Hwa University of Medical Technology, Tainan Hsien 717, Taiwan (China); Chang, Wen-Chun; Chang, Shih-Yu [Department of Safety, Health and Environmental Engineering, Hungkuang University, No. 34, Chung-Chie Road, Sha-Lu, Taichung 433, Taiwan (China)

    2010-08-15

    In this study, metal hydroxides generated during electrocoagulation (EC) were used to remove the chemical oxygen demand (COD) of oxide chemical mechanical polishing (oxide-CMP) wastewater from a semiconductor manufacturing plant by EC. Adsorption studies were conducted in a batch system for various current densities and temperatures. The COD concentration in the oxide-CMP wastewater was effectively removed and decreased by more than 90%, resulting in a final wastewater COD concentration that was below the Taiwan discharge standard (100 mg L{sup -1}). Since the processed wastewater quality exceeded the direct discharge standard, the effluent could be considered for reuse. The adsorption kinetic studies showed that the EC process was best described using the pseudo-second-order kinetic model at the various current densities and temperatures. The experimental data were also tested against different adsorption isotherm models to describe the EC process. The Freundlich adsorption isotherm model predictions matched satisfactorily with the experimental observations. Thermodynamic parameters, including the Gibbs free energy, enthalpy, and entropy, indicated that the COD adsorption of oxide-CMP wastewater on metal hydroxides was feasible, spontaneous and endothermic in the temperature range of 288-318 K.

  5. Adsorption treatment of oxide chemical mechanical polishing wastewater from a semiconductor manufacturing plant by electrocoagulation

    International Nuclear Information System (INIS)

    Chou, Wei-Lung; Wang, Chih-Ta; Chang, Wen-Chun; Chang, Shih-Yu

    2010-01-01

    In this study, metal hydroxides generated during electrocoagulation (EC) were used to remove the chemical oxygen demand (COD) of oxide chemical mechanical polishing (oxide-CMP) wastewater from a semiconductor manufacturing plant by EC. Adsorption studies were conducted in a batch system for various current densities and temperatures. The COD concentration in the oxide-CMP wastewater was effectively removed and decreased by more than 90%, resulting in a final wastewater COD concentration that was below the Taiwan discharge standard (100 mg L -1 ). Since the processed wastewater quality exceeded the direct discharge standard, the effluent could be considered for reuse. The adsorption kinetic studies showed that the EC process was best described using the pseudo-second-order kinetic model at the various current densities and temperatures. The experimental data were also tested against different adsorption isotherm models to describe the EC process. The Freundlich adsorption isotherm model predictions matched satisfactorily with the experimental observations. Thermodynamic parameters, including the Gibbs free energy, enthalpy, and entropy, indicated that the COD adsorption of oxide-CMP wastewater on metal hydroxides was feasible, spontaneous and endothermic in the temperature range of 288-318 K.

  6. Adsorption treatment of oxide chemical mechanical polishing wastewater from a semiconductor manufacturing plant by electrocoagulation.

    Science.gov (United States)

    Chou, Wei-Lung; Wang, Chih-Ta; Chang, Wen-Chun; Chang, Shih-Yu

    2010-08-15

    In this study, metal hydroxides generated during electrocoagulation (EC) were used to remove the chemical oxygen demand (COD) of oxide chemical mechanical polishing (oxide-CMP) wastewater from a semiconductor manufacturing plant by EC. Adsorption studies were conducted in a batch system for various current densities and temperatures. The COD concentration in the oxide-CMP wastewater was effectively removed and decreased by more than 90%, resulting in a final wastewater COD concentration that was below the Taiwan discharge standard (100 mg L(-1)). Since the processed wastewater quality exceeded the direct discharge standard, the effluent could be considered for reuse. The adsorption kinetic studies showed that the EC process was best described using the pseudo-second-order kinetic model at the various current densities and temperatures. The experimental data were also tested against different adsorption isotherm models to describe the EC process. The Freundlich adsorption isotherm model predictions matched satisfactorily with the experimental observations. Thermodynamic parameters, including the Gibbs free energy, enthalpy, and entropy, indicated that the COD adsorption of oxide-CMP wastewater on metal hydroxides was feasible, spontaneous and endothermic in the temperature range of 288-318 K. Copyright 2010 Elsevier B.V. All rights reserved.

  7. Risk for work-related fatigue among the employees on semiconductor manufacturing lines.

    Science.gov (United States)

    Lin, Yu-Cheng; Chen, Yen-Cheng; Hsieh, Hui-I; Chen, Pau-Chung

    2015-03-01

    To examine the potential risk factors for work-related fatigue (WRF) among workers in modern industries, the authors analyzed the records of need-for-recovery questionnaires and health checkup results for 1545 employees. Compared with regular daytime workers, and after adjusting for confounders, the workers adapting to day-and-night rotating shift work (RSW) had a 4.0-fold (95% confidence interval [CI] = 2.7-5.9) increased risk for WRF, higher than the 2.2-fold risk (95% CI = 1.5-3.3) for persistent shift workers. Based on highest education level, the male employees with university degrees had the highest adjusted odds ratio (a-OR) 2.8 (95% CI = 1.0-7.8) for complaining of WRF versus compulsory education group. For female workers, currently married/cohabiting status was inversely associated with WRF (a-OR = 0.5; 95% CI = 0.2-0.9), and child-rearing responsibility moderately increased WRF risk (a-OR = 1.9; 95% CI = 1.0-3.7). Day-and-night RSW and the adaptation, educational levels of males, and domestic factors for females contributed to WRF among semiconductor manufacturing employees. © 2013 APJPH.

  8. Evaluation of pelletron accelerator facility to study radiation effects on semiconductor devices

    International Nuclear Information System (INIS)

    Prakash, A. P. Gnana; Pushpa, N.; Praveen, K. C.; Naik, P. S.; Revannasiddaiah, D.

    2012-01-01

    In this paper we present the comprehensive results on the effects of different radiation on the electrical characteristics of different semiconductor devices like Si BJT, n-channel MOSFETs, 50 GHz and 200 GHz silicon-germanium heterojunction bipolar transistor (SiGe HBTs). The total dose effects of different radiation are compared in the same total dose ranging from 100 krad to 100 Mrad. We show that the irradiation time needed to reach very high total dose can be reduced by using Pelletron accelerator facilities instead of conventional irradiation facilities.

  9. Evaluation of pelletron accelerator facility to study radiation effects on semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, A. P. Gnana; Pushpa, N.; Praveen, K. C.; Naik, P. S.; Revannasiddaiah, D. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore-570006, Karnataka (India)

    2012-06-05

    In this paper we present the comprehensive results on the effects of different radiation on the electrical characteristics of different semiconductor devices like Si BJT, n-channel MOSFETs, 50 GHz and 200 GHz silicon-germanium heterojunction bipolar transistor (SiGe HBTs). The total dose effects of different radiation are compared in the same total dose ranging from 100 krad to 100 Mrad. We show that the irradiation time needed to reach very high total dose can be reduced by using Pelletron accelerator facilities instead of conventional irradiation facilities.

  10. Treatment of exhaust gas from the semiconductor manufacturing process. 3; Handotai seizo sochi kara no hai gas shori. 3

    Energy Technology Data Exchange (ETDEWEB)

    Fukunaga, A. [Ebara Research Co. Ltd., Kanagawa (Japan); Mori, Y.; Osato, M.; Tsujimura, M. [Ebara Corp., Tokyo (Japan)

    1995-10-20

    Demand has been building up for an individual dry type scrubber for treating exhaust gas from the semiconductor manufacturing process. Some factors for the wide acceptance of such a scrubber would be the capability for complete treatment, easy maintenance and safety features, etc. Practical gas analysis and optimum scrubbing techniques would have to be applied, as well as effective monitoring, alarm, and fail-safe techniques. The overall exhaust gas line, i.e. the line connecting the scrubber system and the upstream process, including that extending to pump system, has to be fully considered for enabling effective scrubbing performance. Such factors, which have until now not been given any priority, would have to be fully studied for the development of a practical, individual dry type scrubber. Cooperation on this matter from the semiconductor manufacturing industry would also be essential. 6 refs., 3 figs., 5 tabs.

  11. Facile synthesis and enhanced visible-light photocatalysis of graphitic carbon nitride composite semiconductors.

    Science.gov (United States)

    Li, Huiquan; Liu, Yuxing; Gao, Xing; Fu, Cong; Wang, Xinchen

    2015-04-13

    The semiconductor heterojunction has been an effective architecture to enhance photocatalytic activity by promoting photogenerated charge separation. Here, graphitic carbon nitride (CN) and B-modified graphitic carbon nitride (CNB) composite semiconductors were fabricated by a facile calcination process using cheap, sustainable, and easily available sodium tetraphenylboron and urea as precursors. The synthetic CN-CNB-25 semiconductor with a suitable CNB content showed the highest visible-light activity. Its degradation ratio for methyl orange and phenol was more than twice that of CN and CNB and its H2 evolution rate was ∼3.4 and ∼1.8 times higher than that of CN and CNB, respectively. It also displayed excellent stability and reusability. The enhanced activity of CN-CNB-25 was attributed predominantly to the efficient separation of photoinduced electrons and holes. This paper describes a visible-light-responsive CN composite semiconductor with great potential in environmental and energy applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Surrogate Final Technical Report for "Solar: A Photovoltaic Manufacturing Development Facility"

    Energy Technology Data Exchange (ETDEWEB)

    Farrar, Paul [State University of New York Research Foundation, Albany, NY (United States)

    2014-06-27

    The project goal to create a first-of-a-kind crystalline Silicon (c-Si) photovoltaic (PV) Manufacturing & Technology Development Facility (MDF) that will support the growth and maturation of a strong domestic PV manufacturing industry, based on innovative and differentiated technology, by ensuring industry participants can, in a timely and cost-effective manner, access cutting-edge manufacturing equipment and production expertise needed to accelerate the transition of innovative technologies from R&D into manufacturing.

  13. Nanoimprint wafer and mask tool progress and status for high volume semiconductor manufacturing

    Science.gov (United States)

    Matsuoka, Yoichi; Seki, Junichi; Nakayama, Takahiro; Nakagawa, Kazuki; Azuma, Hisanobu; Yamamoto, Kiyohito; Sato, Chiaki; Sakai, Fumio; Takabayashi, Yukio; Aghili, Ali; Mizuno, Makoto; Choi, Jin; Jones, Chris E.

    2016-10-01

    Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash* Imprint Lithography (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are many criteria that determine whether a particular technology is ready for wafer manufacturing. Defectivity and mask life play a significant role relative to meeting the cost of ownership (CoO) requirements in the production of semiconductor devices. Hard particles on a wafer or mask create the possibility of inducing a permanent defect on the mask that can impact device yield and mask life. By using material methods to reduce particle shedding and by introducing an air curtain system, the lifetime of both the master mask and the replica mask can be extended. In this work, we report results that demonstrate a path towards achieving mask lifetimes of better than 1000 wafers. On the mask side, a new replication tool, the FPA-1100 NR2 is introduced. Mask replication is required for nanoimprint lithography (NIL), and criteria that are crucial to the success of a replication platform include both particle control, resolution and image placement accuracy. In this paper we discuss the progress made in both feature resolution and in meeting the image placement specification for replica masks.

  14. Manufacture of ribbon and solar cells of material of semiconductor grade

    International Nuclear Information System (INIS)

    1980-01-01

    A method is described of producing ribbon-like substantially monocrystalline bodies of silicon or other materials of semiconductor grade suitable for use in solar cells or other semiconductor devices. A tube of the material is made and a photovoltaic junction formed in it. The tube is then divided lengthwise into a number of ribbon-like bodies. The photovoltaic junction can be formed either by diffusion or by ion-implantation. (U.K.)

  15. Aerospace Manufacturing and Rework Facilities: National Emission Standards for Hazardous Air Pollutants (NESHAP)

    Science.gov (United States)

    Find regulatory information regarding the NESHAP for Aerospace manufacturing and rework facilities. This page contains the rule summary, rule history, and related rules and additional resources for this standard.

  16. Supplymentary type semiconductor device and manufacturing method. Soho gata handotai sochi oyobi sono seizo hoho

    Energy Technology Data Exchange (ETDEWEB)

    Uno, Masaaki

    1990-01-08

    As a supplementary type semiconductor device has a complicated structure, it is extremely difficult to construct it in a three dimensional structure. This invention aims to reduce its occupying area by forming p-channel and n-channel transistors in a solid structure; moreover in an easy method of production. In other words, an opening is made in the element-forming region of a semiconductor substrate, forming a gate-insulation film on each of the p-type and n-type semiconductors which are exposed on the two facing surfaces; on it formed a gate electrode; p-type semiconductor surface is used as a channel domain; a drain region of n-channel transistor on one surface and a source region on another surface; the n-type semiconductor surface corresponding to the gate electrode is used as a channel region; a source region of the n-channel transistor is formed on the same surface and the drain region on the substrate surface. Occupied area is thus made less and the production gets easier. 20 figs.

  17. Coordination in International Manufacturing: The Role of Competitive Priorities and the Focus of Globally Dispersed Facilities

    Directory of Open Access Journals (Sweden)

    Ahmed Sayem

    2018-04-01

    Full Text Available In this era of globalization, network integration has received great attention, as it certainly has implications for the competitiveness in international manufacturing. A key issue in integration is to coordinate activities of dispersed facilities in a way to align the target of locating abroad and the priorities to be competitive. This study explores and clarifies the effect of competitive priority and focus of dispersed facilities on coordinating the activities in intra-firm network manufacturing. Based on a multiple case study involving four different companies manufacturing in globally dispersed facilities, the results confirm that both competitive priorities and specific focus of global manufacturing are important for selecting mechanisms to coordinate overseas facilities, with the competitive priorities ‘quality’ and ‘flexibility’ being the more important. Furthermore, the findings reveal that companies place emphasis on informal mechanisms to coordinate the low-cost focused facilities. In turn, the importance of formal mechanisms seems equal for coordinating both low-cost focused facilities and those focused on capturing a local market. Finally, the findings of this paper suggest that elements of competitive priority, as well as the focus of dispersed facilities, should be considered towards making the choice for mechanisms of coordination. The findings bear important implications for the effective coordination of activities in international manufacturing.

  18. Space Facility for Orbital Remote Manufacturing (SPACEFORM), Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — To address NASA need in continued cost efficient International Space Station (ISS) exploration FOMS Inc. proposes to develop and deploy Space Facility for Orbital...

  19. Feature scale modeling for etching and deposition processes in semiconductor manufacturing

    International Nuclear Information System (INIS)

    Pyka, W.

    2000-04-01

    Simulation of etching and deposition processes as well as three-dimensional geometry generation are important issues in state of the art TCAD applications. Three-dimensional effects are gaining importance for semiconductor devices and for their interconnects. Therefore a strictly physically based simulation of their topography is required. Accurate investigation of single etching and deposition processes has become equally important as process integration. Within this context several aspects of three-dimensional topography simulation have been covered by this thesis and new and interesting results have been achieved in various areas. The algorithmic core of the cell-based structuring element surface propagation method has been optimized and has been eliminated from its position as factor which predominantly determines the required CPU time. In parallel with investigated optimization techniques and required by various process models, the implementation of the surface normal calculation and the special handling of voids and unconnected parts of the geometry has been completed in three dimensions. A process-step-based solid modeling tool which incorporates layout data as well as aerial image simulation has been supplied. It can be coupled with the topography simulation and includes simple geometrically based models for CMP and oxidation. In the presented combination, the tool makes use of the design information stored in the layout file, combines it with the manufacturing recipe, and hence is extremely helpful for the automatic generation of three-dimensional structures. Its usefulness has been proven with several interconnect examples. Regarding topography models, resist development not only turned out to be very helpful for predicting exposed and etched resist profiles within a rigorous lithography simulation, but, by means of benchmark examples, also demonstrated the extraordinary stability of the proposed cellular surface movement algorithm. With respect to

  20. Nanoscale semiconductor-insulator-metal core/shell heterostructures: facile synthesis and light emission

    Science.gov (United States)

    Li, Gong Ping; Chen, Rui; Guo, Dong Lai; Wong, Lai Mun; Wang, Shi Jie; Sun, Han Dong; Wu, Tom

    2011-08-01

    Controllably constructing hierarchical nanostructures with distinct components and designed architectures is an important theme of research in nanoscience, entailing novel but reliable approaches of bottom-up synthesis. Here, we report a facile method to reproducibly create semiconductor-insulator-metal core/shell nanostructures, which involves first coating uniform MgO shells onto metal oxide nanostructures in solution and then decorating them with Au nanoparticles. The semiconductor nanowire core can be almost any material and, herein, ZnO, SnO2 and In2O3 are used as examples. We also show that linear chains of short ZnO nanorods embedded in MgO nanotubes and porous MgO nanotubes can be obtained by taking advantage of the reduced thermal stability of the ZnO core. Furthermore, after MgO shell-coating and the appropriate annealing treatment, the intensity of the ZnO near-band-edge UV emission becomes much stronger, showing a 25-fold enhancement. The intensity ratio of the UV/visible emission can be increased further by decorating the surface of the ZnO/MgO nanowires with high-density plasmonic Au nanoparticles. These heterostructured semiconductor-insulator-metal nanowires with tailored morphologies and enhanced functionalities have great potential for use as nanoscale building blocks in photonic and electronic applications.Controllably constructing hierarchical nanostructures with distinct components and designed architectures is an important theme of research in nanoscience, entailing novel but reliable approaches of bottom-up synthesis. Here, we report a facile method to reproducibly create semiconductor-insulator-metal core/shell nanostructures, which involves first coating uniform MgO shells onto metal oxide nanostructures in solution and then decorating them with Au nanoparticles. The semiconductor nanowire core can be almost any material and, herein, ZnO, SnO2 and In2O3 are used as examples. We also show that linear chains of short ZnO nanorods embedded in

  1. Development and manufacture of a Nb3Sn superconductor for the high-field test facility

    International Nuclear Information System (INIS)

    Scanlan, R.M.; Cornish, D.N.; Spencer, C.R.; Gregory, E.; Adam, E.

    1981-01-01

    The High-Field Test Facility (HFTF) project has two primary goals. The first is to establish manufacturing capability for a Nb 3 Sn conductor suitable for use in a mirror fusion coil. The second is to provide a test facility for evaluating other fusion conductor designs at high fields. This paper describes some of the problems encountered and the solutions devised in working toward the first goal. Construction of the test facility coils will be described in a subsequent paper

  2. Qualification of academic facilities for small-scale automated manufacture of autologous cell-based products.

    Science.gov (United States)

    Hourd, Paul; Chandra, Amit; Alvey, David; Ginty, Patrick; McCall, Mark; Ratcliffe, Elizabeth; Rayment, Erin; Williams, David J

    2014-01-01

    Academic centers, hospitals and small companies, as typical development settings for UK regenerative medicine assets, are significant contributors to the development of autologous cell-based therapies. Often lacking the appropriate funding, quality assurance heritage or specialist regulatory expertise, qualifying aseptic cell processing facilities for GMP compliance is a significant challenge. The qualification of a new Cell Therapy Manufacturing Facility with automated processing capability, the first of its kind in a UK academic setting, provides a unique demonstrator for the qualification of small-scale, automated facilities for GMP-compliant manufacture of autologous cell-based products in these settings. This paper shares our experiences in qualifying the Cell Therapy Manufacturing Facility, focusing on our approach to streamlining the qualification effort, the challenges, project delays and inefficiencies we encountered, and the subsequent lessons learned.

  3. Design of good manufacturing facility for sterile radioactive pharmaceuticals

    International Nuclear Information System (INIS)

    Shin, B.C.; Choung, W.M.; Park, S.H.; Lee, K.I.; Park, J.H.; Park, K.B.

    2002-01-01

    Based on the GMP codes for radiopharmaceuticals in U.K. and some advanced countries, suitable guidelines for the production facility have been established and followed them up. The facility designs were fairly modified to maintain cleanliness criteria for installation in the existing radioisotope production facilities which are installed only in radiation safety points of view. Detailed design brief was drawn up by the Hyundai Engineering staffs, on the basis of initial planning and conceptual design was carried out by authors. Hot cells were installed in preparation room for radioactive handling. As hot cells under negative air pressure are not properly airtight, the surrounding environment was designed to keep less than class 10,000. Hot cells were designed to maintain less than class 1 0,000 and partially less than class 1 00 for production of sterile products. Final products will be autoclaved for sterilization after filling. To avoid contamination by microorganisms and particles of surrounding area, air curtain with vertical laminar flow will be installed between anteroom and corridor. In a pharmaceutical environment, the main consideration is the protection of the product. Thus, work station is held above ambient pressure. However, when handling radioactive materials, air pressure for work station should be lower than in surrounding areas to protect the operators and the remainder of the facility from airborne radioactive contamination. As Radiopharmaceuticals are radioactive materials for medical use, changing room could be held higher pressure than any other zones. It is expected that the facility will be effectively used for both routine preparation and research for sterile radiopharmaceuticals. (Author)

  4. Semiconductor relay and its manufacture method. Handotai relay oyobi sono seizo hoho

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, M

    1993-06-01

    The invention relates to a semiconductor relay in which a light emitting diode and a photovoltaic element are arranged in the opposite positions and connected with a light connection and aims to present a light transmission path to transmit input signals to the light emitting diode to the side of the photovoltaic element with a negligible light loss effectively. The invention presents a semiconductor relay, in which a light emitting diode loaded on the first lead frame and the light receiving part of the photovoltaic element to drive a MOSFET element loaded on the second lead frame and acting as a switch element are connected through an insulator tube with an opaque outer wall, and the interior of the insulator tube is filled with a transparent insulating filler, so that the invention affords a light transmission path without light leakage from the interior of the opaque insulator tube and with the stability in the form and no light loss. 3 figs.

  5. Commercial-scale biotherapeutics manufacturing facility for plant-made pharmaceuticals.

    Science.gov (United States)

    Holtz, Barry R; Berquist, Brian R; Bennett, Lindsay D; Kommineni, Vally J M; Munigunti, Ranjith K; White, Earl L; Wilkerson, Don C; Wong, Kah-Yat I; Ly, Lan H; Marcel, Sylvain

    2015-10-01

    Rapid, large-scale manufacture of medical countermeasures can be uniquely met by the plant-made-pharmaceutical platform technology. As a participant in the Defense Advanced Research Projects Agency (DARPA) Blue Angel project, the Caliber Biotherapeutics facility was designed, constructed, commissioned and released a therapeutic target (H1N1 influenza subunit vaccine) in manufacturing facilities, with the capacity to process over 3500 kg of plant biomass per week in an automated multilevel growing environment using proprietary LED lighting. The facility can commission additional plant grow rooms that are already built to double this capacity. In addition to the commercial-scale manufacturing facility, a pilot production facility was designed based on the large-scale manufacturing specifications as a way to integrate product development and technology transfer. The primary research, development and manufacturing system employs vacuum-infiltrated Nicotiana benthamiana plants grown in a fully contained, hydroponic system for transient expression of recombinant proteins. This expression platform has been linked to a downstream process system, analytical characterization, and assessment of biological activity. This integrated approach has demonstrated rapid, high-quality production of therapeutic monoclonal antibody targets, including a panel of rituximab biosimilar/biobetter molecules and antiviral antibodies against influenza and dengue fever. © 2015 Society for Experimental Biology, Association of Applied Biologists and John Wiley & Sons Ltd.

  6. Mechanical Design and Manufacturing Preparation of Loading Unloading Irradiation Facility in Reflector Irradiation Position

    International Nuclear Information System (INIS)

    Hasibuan, Djaruddin

    2004-01-01

    Base on planning to increase of the irradiation service quality in Multi purpose Reactor-GAS, the mechanical design and manufacturing of the (n,γ) irradiation facility has been done. The designed of (n,γ) irradiation facility is a new facility in Multi purpose Reactor-GAS. The design doing by design of stringer, guide bar and hanger. By the design installation, the continuous irradiation service of non fission reaction will be easy to be done without reactor shut down. The design of the facility needs 3 pieces Al pipe by 36 x 1.5 mm, a peace of Al round bar by 80 mm diameter and a piece of Al plate by 20 x 60 x 0.2 mm for the stringer and guide bar manufacturing. By the building of non fission irradiation facility in the reflector irradiation position, will make the irradiation service to be increased. (author)

  7. Feasibility Study of Nanoscale Semiconductor Manufacture Using Thermal Dip Pen Nanolithography

    National Research Council Canada - National Science Library

    King, William P

    2006-01-01

    ...) for the purpose of nanoscale electronics manufacturing. In this project, we have demonstrated that using the thermal DPN technique that both indium metal, and semiconducting organic materials (PDDT, PVDF...

  8. Surrogate Plant Data Base : Volume 3. Appendix D : Facilities Planning Data ; Operating Manpower, Manufacturing Budgets and Pre-Production Launch ...

    Science.gov (United States)

    1983-05-01

    This four volume report consists of a data base describing "surrogate" automobile and truck manufacturing plants developed as part of a methodology for evaluating capital investment requirements in new manufacturing facilities to build new fleets of ...

  9. Status and progress in ion implantation technology for semiconductor device manufacturing

    International Nuclear Information System (INIS)

    Takahashi, Noriyuki

    1998-01-01

    Rapid growth in implant applications in the fabrication of semiconductors has encouraged a dramatic increase in the range of energies, beam currents and ion species used. The challenges of a wider energy range, higher beam currents, continued reduction in contamination, improved angle integrity and larger substrates have motivated the development of many innovations. Advanced processes in submicron device production uses up to twenty implantation steps. Thus the outstanding growth of this industry has led to the evolution of a thriving business of hundreds of implantation equipment systems each year with very specific requirements. The present paper reviews the principal process requirements which resulted in the evolution of the equipment technology, and describes the recent trends in the ion implanter technology all three principal categories: high current, medium current and high energy. (author)

  10. Manufacturing cost study on the ion sources for the Mirror Fusion Test Facility

    International Nuclear Information System (INIS)

    A study of the cost of manufacturing 48 ion sources for the Mirror Fusion Test Facility is described. The estimate is built up from individual part costs and assembly operation times for the 80 kV prototype source constructed by LLL and described by LLL drawings furnished during December 1978. Recommendations for cost reduction are made

  11. Worker exposure to methanol vapors during cleaning of semiconductor wafers in a manufacturing setting.

    Science.gov (United States)

    Gaffney, Shannon; Moody, Emily; McKinley, Meg; Knutsen, Jeffrey; Madl, Amy; Paustenbach, Dennis

    2008-05-01

    An exposure simulation was conducted to characterize methanol exposure of workers who cleaned wafers in quality control departments within the semiconductor industry. Short-term (15 min) and long-term (2-4 hr) personal and area samples (at distances of 1 m and 3-6 m from the source) were collected during the 2-day simulation. On the first day, 45 mL of methanol were used per hour by a single worker washing wafers in a 102 m(3) room with a ventilation rate of about 10 air changes per hour (ACH). Virtually all methanol volatilized. To assess exposures under conditions associated with higher productivity, on the second day, two workers cleaned wafers simultaneously, together using methanol at over twice the rate of the first day (95 mL/hr). On this day, the ventilation rate was halved (5 ACH). Personal concentrations on the first day averaged 60 ppm (SD = 46 ppm) and ranged from 10-140 ppm. On the second day, personal concentrations for both workers averaged 118 ppm (SD = 50 ppm; range: 64-270 ppm). Area concentrations measured on the first day at 1 m from the source and throughout the balance of the room averaged 29 ppm (SD = 19 ppm; range: 4-83 ppm) and 18 ppm (SD = 12 ppm; range: 3-42 ppm), respectively. As expected, area concentrations measured on the second day were higher than the first and averaged 73 ppm (SD = 25 ppm; range: 27-140 ppm) at 1 meter and 48 ppm (SD = 13 ppm; range: 21-67 ppm) throughout the balance of the room. The results of this simulation suggest that the use of methanol to clean semiconductor wafers without the use of local exhaust ventilation and with relatively low room ventilation rates is unlikely to result in worker exposures exceeding the current ACGIH(R) threshold limit value of 200 ppm. This study also confirmed prior studies suggesting that when a relatively volatile chemical is located within arm's length (near field), breathing zone concentrations will be about two- to threefold greater than the room concentration when the air

  12. Elimination of Porcine Epidemic Diarrhea Virus in an Animal Feed Manufacturing Facility.

    Directory of Open Access Journals (Sweden)

    Anne R Huss

    Full Text Available Porcine Epidemic Diarrhea Virus (PEDV was the first virus of wide scale concern to be linked to possible transmission by livestock feed or ingredients. Measures to exclude pathogens, prevent cross-contamination, and actively reduce the pathogenic load of feed and ingredients are being developed. However, research thus far has focused on the role of chemicals or thermal treatment to reduce the RNA in the actual feedstuffs, and has not addressed potential residual contamination within the manufacturing facility that may lead to continuous contamination of finished feeds. The purpose of this experiment was to evaluate the use of a standardized protocol to sanitize an animal feed manufacturing facility contaminated with PEDV. Environmental swabs were collected throughout the facility during the manufacturing of a swine diet inoculated with PEDV. To monitor facility contamination of the virus, swabs were collected at: 1 baseline prior to inoculation, 2 after production of the inoculated feed, 3 after application of a quaternary ammonium-glutaraldehyde blend cleaner, 4 after application of a sodium hypochlorite sanitizing solution, and 5 after facility heat-up to 60°C for 48 hours. Decontamination step, surface, type, zone and their interactions were all found to impact the quantity of detectable PEDV RNA (P < 0.05. As expected, all samples collected from equipment surfaces contained PEDV RNA after production of the contaminated feed. Additionally, the majority of samples collected from non-direct feed contact surfaces were also positive for PEDV RNA after the production of the contaminated feed, emphasizing the potential role dust plays in cross-contamination of pathogen throughout a manufacturing facility. Application of the cleaner, sanitizer, and heat were effective at reducing PEDV genomic material (P < 0.05, but did not completely eliminate it.

  13. Effects of fluorine contamination on spin-on dielectric thickness in semiconductor manufacturing

    Science.gov (United States)

    Kim, Hyoung-ryeun; Hong, Soonsang; Kim, Samyoung; Oh, Changyeol; Hwang, Sung Min

    2018-03-01

    In the recent semiconductor industry, as the device shrinks, spin-on dielectric (SOD) has been adopted as a widely used material because of its excellent gap-fill, efficient throughput on mass production. SOD film must be uniformly thin, homogeneous and free of particle defects because it has been perfectly perserved after chemical-mechanical polishing (CMP) and etching process. Spin coating is one of the most common techniques for applying SOD thin films to substrates. In spin coating process, the film thickness and uniformity are strong function of the solution viscosity, the final spin speed and the surface properties. Especially, airborne molecular contaminants (AMCs), such as HF, HCl and NH3, are known to change to surface wetting characteristics. In this work, we study the SOD film thickness as a function of fluorine contamination on the wafer surface. To examine the effects of airborne molecular contamination, the wafers are directly exposed to HF fume followed by SOD coating. It appears that the film thickness decreases by higher contact angle on the wafer surface due to fluorine contamination. The thickness of the SOD film decreased with increasing fluorine contamination on the wafer surface. It means that the wafer surface with more hydrophobic property generates less hydrogen bonding with the functional group of Si-NH in polysilazane(PSZ)-SOD film. Therefore, the wetting properties of silicon wafer surfaces can be degraded by inorganic contamination in SOD coating process.

  14. Respirator use and its impact on particulate matter exposure in aluminum manufacturing facilities.

    Science.gov (United States)

    Liu, Sa; Noth, Elizabeth; Eisen, Ellen; Cullen, Mark R; Hammond, Katharine

    2018-05-31

    Objectives As part of a large epidemiologic study of particulate health effect, this study aimed to report respirator use among total particulate matter (TPM) samples collected in a major aluminum manufacturing company from 1966‒2013 and evaluate the impact of respirator-use adjustment on exposure estimation. Methods Descriptive analyses were performed to evaluate respirator use across facilities and by facility type and job. Protection factors were applied to TPM measurements for recorded respirator use. Estimated TPM exposure for each job ‒ before and after respirator-use adjustment ‒ were compared to assess the impact of adjustment on exposure estimation. Results Respirator use was noted for 37% of 12 402 full-shift personal TPM samples. Measured TPM concentration ranged from less than detectable to 8220 mg/m3, with arithmetic mean, median and standard deviation being 10.6, 0.87 and 130 mg/m 3 , respectively. Respirators were used more often in smelting facilities (52% of TPM measurements) than in fabricating (17%) or refinery facilities (28%) (Pfacilities were subject to respirator-use adjustment, whereas it was 20% and 70% in fabricating and refinery facilities, respectively. Applying protection factors to TPM measurements significantly reduced estimated job mean TPM exposures and changed exposure categories in these facilities, with larger impact in smelting than fabricating facilities. Conclusions Respirator use varied by time, facility and job. Adjusting respirator use resulted in differential impact in smelting and fabricating facilities, which will need to be incorporated into ongoing epidemiologic studies accordingly.

  15. Implementation of activity-based costing (ABC) to drive cost reduction efforts in a semiconductor manufacturing operation

    Science.gov (United States)

    Naguib, Hussein; Bol, Igor I.; Lora, J.; Chowdhry, R.

    1994-09-01

    This paper presents a case study on the implementation of ABC to calculate the cost per wafer and to drive cost reduction efforts for a new IC product line. The cost reduction activities were conducted through the efforts of 11 cross-functional teams which included members of the finance, purchasing, technology development, process engineering, equipment engineering, production control, and facility groups. The activities of these cross functional teams were coordinated by a cost council. It will be shown that these activities have resulted in a 57% reduction in the wafer manufacturing cost of the new product line. Factors contributed to successful implementation of an ABC management system are discussed.

  16. Dosimetric evaluation of semiconductor detectors for application in neutron dosimetry and microdosimetry in nuclear reactor and radiosurgical facilities

    International Nuclear Information System (INIS)

    Cardenas, Jose Patricio Nahuel

    2010-01-01

    The main objective of this research is the dosimetric evaluation of semiconductor components (surface barrier detectors and PIN photodiodes) for applications in dose equivalent measurements on low dose fields (fast and thermal fluxes) using an AmBe neutron source, the IEA-R1 reactor neutrongraphy facility (epithermal and thermal fluxes) and the Critical Unit facility IPEN/MB-01 (fast fluxes). As moderator compound to fast neutrons flux from the AmBe source was used paraffin and boron and polyethylene as converter for thermal and fast neutrons measurements. The resulting fluxes were used to the irradiation of semiconductor components (SSB - Surface Barrier Detector and PIN photodiodes). A mixed converter made of a borated polyethylene foil (Kodak) was also used. Monte Carlo simulation methodology was employed to evaluate analytically the optimal paraffin thickness. The obtained results were similar to the experimental data and allowed the evaluation of emerging neutron flux from moderator, as well as the fast neutron flux reaching the polyethylene covering the semiconductor sensitive surface. Gamma radiation levels were evaluated covering the whole detector with cadmium foil 1 mm thick, allowing thermal neutrons blockage and gamma radiation measurements. The IPEN/MB-01 facility was employed to evaluate the detector response for high neutron flux. The results were in good agreement with other studies published. Using the obtained spectra an approach to dose equivalent calculation was established. (author)

  17. Fabrication of Circuit QED Quantum Processors, Part 2: Advanced Semiconductor Manufacturing Perspectives

    Science.gov (United States)

    Michalak, D. J.; Bruno, A.; Caudillo, R.; Elsherbini, A. A.; Falcon, J. A.; Nam, Y. S.; Poletto, S.; Roberts, J.; Thomas, N. K.; Yoscovits, Z. R.; Dicarlo, L.; Clarke, J. S.

    Experimental quantum computing is rapidly approaching the integration of sufficient numbers of quantum bits for interesting applications, but many challenges still remain. These challenges include: realization of an extensible design for large array scale up, sufficient material process control, and discovery of integration schemes compatible with industrial 300 mm fabrication. We present recent developments in extensible circuits with vertical delivery. Toward the goal of developing a high-volume manufacturing process, we will present recent results on a new Josephson junction process that is compatible with current tooling. We will then present the improvements in NbTiN material uniformity that typical 300 mm fabrication tooling can provide. While initial results on few-qubit systems are encouraging, advanced processing control is expected to deliver the improvements in qubit uniformity, coherence time, and control required for larger systems. Research funded by Intel Corporation.

  18. Facile synthesis of light harvesting semiconductor bismuth oxychloride nano photo-catalysts for efficient removal of hazardous organic pollutants.

    Directory of Open Access Journals (Sweden)

    Zaki S Seddigi

    Full Text Available In the present work, bismuth oxychloride nanoparticles-a light harvesting semiconductor photocatalyst-were synthesized by a facile hydrolysis route, with sodium bismuthate and hydroxylammonium chloride as the precursor materials. The as-synthesized semiconductor photocatalysts were characterized using X-ray diffraction analysis, Fourier transform infra-red spectroscopy, Raman spectroscopy, Field emission scanning electron microscopy, X-ray photoelectron spectroscopy and Photoluminescence spectroscopy techniques. The crystal structure, morphology, composition, and optical properties of these facile synthesized bismuth oxychloride nanoparticles (BiOCl NPs were compared to those of traditional bismuth oxychloride. In addition, the photocatalytic performance of facile-synthesized BiOCl NPs and traditional BiOCl, as applied to the removal of hazardous organic dyes under visible light illumination, is thoroughly investigated. Our results reveal that facile-synthesized BiOCl NPs display strong UV-Vis light adsorption, improved charge carrier mobility and an inhibited rate of charge carrier recombination, when compared to traditional BiOCl. These enhancements result in an improved photocatalytic degradation rate of hazardous organic dyes under UV-Vis irradiance. For instance, the facile-synthesized BiOCl NPs attained 100% degradation of methylene blue and methyl orange dyes in approximately 30 mins under UV-Vis irradiation, against 55% degradation for traditional BiOCl under similar experimental conditions.

  19. Facile synthesis of light harvesting semiconductor bismuth oxychloride nano photo-catalysts for efficient removal of hazardous organic pollutants.

    Science.gov (United States)

    Seddigi, Zaki S; Gondal, Mohammed A; Baig, Umair; Ahmed, Saleh A; Abdulaziz, M A; Danish, Ekram Y; Khaled, Mazen M; Lais, Abul

    2017-01-01

    In the present work, bismuth oxychloride nanoparticles-a light harvesting semiconductor photocatalyst-were synthesized by a facile hydrolysis route, with sodium bismuthate and hydroxylammonium chloride as the precursor materials. The as-synthesized semiconductor photocatalysts were characterized using X-ray diffraction analysis, Fourier transform infra-red spectroscopy, Raman spectroscopy, Field emission scanning electron microscopy, X-ray photoelectron spectroscopy and Photoluminescence spectroscopy techniques. The crystal structure, morphology, composition, and optical properties of these facile synthesized bismuth oxychloride nanoparticles (BiOCl NPs) were compared to those of traditional bismuth oxychloride. In addition, the photocatalytic performance of facile-synthesized BiOCl NPs and traditional BiOCl, as applied to the removal of hazardous organic dyes under visible light illumination, is thoroughly investigated. Our results reveal that facile-synthesized BiOCl NPs display strong UV-Vis light adsorption, improved charge carrier mobility and an inhibited rate of charge carrier recombination, when compared to traditional BiOCl. These enhancements result in an improved photocatalytic degradation rate of hazardous organic dyes under UV-Vis irradiance. For instance, the facile-synthesized BiOCl NPs attained 100% degradation of methylene blue and methyl orange dyes in approximately 30 mins under UV-Vis irradiation, against 55% degradation for traditional BiOCl under similar experimental conditions.

  20. Calibration and validation of coarse-grained models of atomic systems: application to semiconductor manufacturing

    Science.gov (United States)

    Farrell, Kathryn; Oden, J. Tinsley

    2014-07-01

    methods through applications to representative atomic structures and we discuss extensions to the validation process for molecular models of polymer structures encountered in certain semiconductor nanomanufacturing processes. The powerful method of model plausibility as a means for selecting interaction potentials for coarse-grained models is discussed in connection with a coarse-grained hexane molecule. Discussions of how all-atom information is used to construct priors are contained in an appendix.

  1. A comprehensive review of arsenic levels in the semiconductor manufacturing industry.

    Science.gov (United States)

    Park, Donguk; Yang, Haengsun; Jeong, Jeeyeon; Ha, Kwonchul; Choi, Sangjun; Kim, Chinyon; Yoon, Chungsik; Park, Dooyong; Paek, Domyung

    2010-11-01

    This paper presents a summary of arsenic level statistics from air and wipe samples taken from studies conducted in fabrication operations. The main objectives of this study were not only to describe arsenic measurement data but also, through a literature review, to categorize fabrication workers in accordance with observed arsenic levels. All airborne arsenic measurements reported were included in the summary statistics for analysis of the measurement data. The arithmetic mean was estimated assuming a lognormal distribution from the geometric mean and the geometric standard deviation or the range. In addition, weighted arithmetic means (WAMs) were calculated based on the number of measurements reported for each mean. Analysis of variance (ANOVA) was employed to compare arsenic levels classified according to several categories such as the year, sampling type, location sampled, operation type, and cleaning technique. Nine papers were found reporting airborne arsenic measurement data from maintenance workers or maintenance areas in semiconductor chip-making plants. A total of 40 statistical summaries from seven articles were identified that represented a total of 423 airborne arsenic measurements. Arsenic exposure levels taken during normal operating activities in implantation operations (WAM = 1.6 μg m⁻³, no. of samples = 77, no. of statistical summaries = 2) were found to be lower than exposure levels of engineers who were involved in maintenance works (7.7 μg m⁻³, no. of samples = 181, no. of statistical summaries = 19). The highest level (WAM = 218.6 μg m⁻³) was associated with various maintenance works performed inside an ion implantation chamber. ANOVA revealed no significant differences in the WAM arsenic levels among the categorizations based on operation and sampling characteristics. Arsenic levels (56.4 μg m⁻³) recorded during maintenance works performed in dry conditions were found to be much higher than those from maintenance works in wet

  2. Characterization of airborne and bulk particulate from iron and steel manufacturing facilities.

    Science.gov (United States)

    Machemer, Steven D

    2004-01-15

    Characterization of airborne and bulk particulate material from iron and steel manufacturing facilities, commonly referred to as kish, indicated graphite flakes and graphite flakes associated with spherical iron oxide particles were unique particle characteristics useful in identifying particle emissions from iron and steel manufacturing. Characterization of airborne particulate material collected in receptor areas was consistent with multiple atmospheric release events of kish particles from the local iron and steel facilities into neighboring residential areas. Kish particles deposited in nearby residential areas included an abundance of graphite flakes, tens of micrometers to millimeters in size, and spherical iron oxide particles, submicrometer to tens of micrometers in size. Bulk kish from local iron and steel facilities contained an abundance of similar particles. Approximately 60% of blast furnace kish by volume consisted of spherical iron oxide particles in the respirable size range. Basic oxygen furnace kish contained percent levels of strongly alkaline components such as calcium hydroxide. In addition, concentrations of respirable Mn in airborne particulate in residential areas and at local iron and steel facilities were approximately 1.6 and 53 times the inhalation reference concentration of 0.05 microg/m3 for chronic inhalation exposure of Mn, respectively. Thus, airborne release of kish may pose potential respirable particulate, corrosive, or toxic hazards for human health and/or a corrosive hazard for property and the environment.

  3. Organic semiconductors in sensor applications

    CERN Document Server

    Malliaras, George; Owens, Róisín

    2008-01-01

    Organic semiconductors offer unique characteristics such as tunability of electronic properties via chemical synthesis, compatibility with mechanically flexible substrates, low-cost manufacturing, and facile integration with chemical and biological functionalities. These characteristics have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this rapidly emerging field by discussing both optical and electrical sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques to enhance specificity are outlined, and models for the sensor response are described.

  4. Research on Dynamic Facility Layout Problem of Manufacturing Unit Considering Human Factors

    Directory of Open Access Journals (Sweden)

    Jinying Li

    2018-01-01

    Full Text Available As many said, industry 4.0 is an epoch-making revolution which brought the manufacturing market much faster changes and severer competitions. As an important part of the manufacturing system, facility layout has direct impact on business benefit; at the same time, despite the intelligent factory, intelligent production has its own characteristics. However, there is one point on which industry and academia have basically formed a consensus: it is not true that industry 4.0 does not need human beings; on the contrary, human initiative plays an unabated role in the development of industry 4.0. This paper will focus on the dynamic facility layout of the manufacturing unit. Based on the system above and the traditional optimization model, a mathematic model is built to find the best solution combining safety, sustainability, high efficiency, and low cost. And penalty function with adaptive penalty factor and advanced artificial bee colony algorithm is used to solve the constrained model. In the end, by studying few cases, the model is proved to be effective in both efficiency improvement and the implementation of safe and comfort human-machine interaction.

  5. A novel microgrid demand-side management system for manufacturing facilities

    Science.gov (United States)

    Harper, Terance J.

    Thirty-one percent of annual energy consumption in the United States occurs within the industrial sector, where manufacturing processes account for the largest amount of energy consumption and carbon emissions. For this reason, energy efficiency in manufacturing facilities is increasingly important for reducing operating costs and improving profits. Using microgrids to generate local sustainable power should reduce energy consumption from the main utility grid along with energy costs and carbon emissions. Also, microgrids have the potential to serve as reliable energy generators in international locations where the utility grid is often unstable. For this research, a manufacturing process that had approximately 20 kW of peak demand was matched with a solar photovoltaic array that had a peak output of approximately 3 KW. An innovative Demand-Side Management (DSM) strategy was developed to manage the process loads as part of this smart microgrid system. The DSM algorithm managed the intermittent nature of the microgrid and the instantaneous demand of the manufacturing process. The control algorithm required three input signals; one from the microgrid indicating the availability of renewable energy, another from the manufacturing process indicating energy use as a percent of peak production, and historical data for renewable sources and facility demand. Based on these inputs the algorithm had three modes of operation: normal (business as usual), curtailment (shutting off non-critical loads), and energy storage. The results show that a real-time management of a manufacturing process with a microgrid will reduce electrical consumption and peak demand. The renewable energy system for this research was rated to provide up to 13% of the total manufacturing capacity. With actively managing the process loads with the DSM program alone, electrical consumption from the utility grid was reduced by 17% on average. An additional 24% reduction was accomplished when the microgrid

  6. Offshoring in the Semiconductor Industry: Historical Perspectives

    OpenAIRE

    Brown, Clair; Linden, Greg

    2005-01-01

    Semiconductor design is a frequently-cited example of the new wave of offshoring and foreign-outsourcing of service sector jobs. It is certainly a concern to U.S. design engineers themselves. In addition to the current wave of white-collar outsourcing, the industry also has a rich experience with offshoring of manufacturing activity. Semiconductor companies were among the first to invest in offshore facilities to manufacture goods for imports back to the U.S. A brief review of these earlie...

  7. Manufacture and installation of reactor auxiliary facilities for advanced thermal prototype reactor 'Fugen'

    International Nuclear Information System (INIS)

    Kawahara, Toshio; Matsushita, Tadashi

    1977-01-01

    The facilities of reactor auxiliary systems for the advanced thermal prtotype reactor ''Fugen'' were manufactured in factories since 1972, and the installation at the site began in November, 1974. It was almost completed in March, 1977, except a part of the tests and inspections, therefore the outline of the works is reported. The ATR ''Fugen'' is a heavy water-moderated, boiling light water reactor, and its reactor auxiliary systems comprise mainly the facilities for handling heavy water, such as heavy water cooling system, heavy water cleaning system, poison supplying system, helium circulating system, helium cleaning system, and carbon dioxide system. The poison supplying system supplies liquid poison to the heavy water cooling system to absorb excess reactivity in the initial reactor core. The helium circulating system covers heavy water surface with helium to prevent the deterioration of heavy water and maintains heavy water level by pressure difference. The carbon dioxide system flows highly pure CO 2 gas in the space of pressure tubes and carandria tubes, and provides thermal shielding. The design, manufacture and installation of the facilities of reactor auxiliary systems, and the helium leak test, synthetic pressure test and total cleaning are explained. (Kako, I.)

  8. Characterization of contaminated nuclear sites, facilities and materials: radioisotope and radiopharmaceutical manufacturers and suppliers. Final report

    International Nuclear Information System (INIS)

    1983-01-01

    The Environmental Protection Agency (EPA) is developing environmental protection standards for evaluating the risks and characterizing problems associated with disposal of radioactive wastes arising from decontamination and decommissioning DandD operations. Information on operations conducted at sites authorized to possess radioactive materials for the production and/or distribution of radioisotopes and radiopharmaceuticals was compiled and evaluated. This information was used to project the types, nature, and volumes of wastes which are likely to be generated during decontamination and decommissioning at representative facilities and identifying special problems that may occur. Radioisotope and radiopharmaceutical manufacturers have been grouped together because decommissioning operations will be similar. Nuclear pharmacies were also evaluated because of their increasing numbers and their role as middlemen between manufacturers and users of radiopharmaceuticals. The majority of the radioactive waste will arise from the decontamination of the laboratories, rather than the disposal of components

  9. Characterizing the rapid spread of porcine epidemic diarrhea virus (PEDV through an animal food manufacturing facility.

    Directory of Open Access Journals (Sweden)

    Loni L Schumacher

    Full Text Available New regulatory and consumer demands highlight the importance of animal feed as a part of our national food safety system. Porcine epidemic diarrhea virus (PEDV is the first viral pathogen confirmed to be widely transmissible in animal food. Because the potential for viral contamination in animal food is not well characterized, the objectives of this study were to 1 observe the magnitude of virus contamination in an animal food manufacturing facility, and 2 investigate a proposed method, feed sequencing, to decrease virus decontamination on animal food-contact surfaces. A U.S. virulent PEDV isolate was used to inoculate 50 kg swine feed, which was mixed, conveyed, and discharged into bags using pilot-scale feed manufacturing equipment. Surfaces were swabbed and analyzed for the presence of PEDV RNA by quantitative real-time polymerase chain reaction (qPCR. Environmental swabs indicated complete contamination of animal food-contact surfaces (0/40 vs. 48/48, positive baseline samples/total baseline samples, positive subsequent samples/total subsequent samples, respectively; P < 0.05 and near complete contamination of non-animal food-contact surfaces (0/24 vs. 16/18, positive baseline samples/total baseline samples, positive subsequent samples/total subsequent samples, respectively; P < 0.05. Flushing animal food-contact surfaces with low-risk feed is commonly used to reduce cross-contamination in animal feed manufacturing. Thus, four subsequent 50 kg batches of virus-free swine feed were manufactured using the same system to test its impact on decontaminating animal food-contact surfaces. Even after 4 subsequent sequences, animal food-contact surfaces retained viral RNA (28/33 positive samples/total samples, with conveying system being more contaminated than the mixer. A bioassay to test infectivity of dust from animal food-contact surfaces failed to produce infectivity. This study demonstrates the potential widespread viral contamination of

  10. Mercury regulation, fate, transport, transformation, and abatement within cement manufacturing facilities: review.

    Science.gov (United States)

    Sikkema, Joel K; Alleman, James E; Ong, Say Kee; Wheelock, Thomas D

    2011-09-15

    The USEPA's 2010 mercury rule, which would reduce emissions from non-hazardous waste burning cement manufacturing facilities by an estimated 94%, represents a substantial regulatory challenge for the industry. These regulations, based on the performance of facilities that benefit from low concentrations of mercury in their feedstock and fuel inputs (e.g., limestone concentration was less than 25 ppb at each facility), will require non-compliant facilities to develop innovative controls. Control development is difficult because each facility's emissions must be assessed and simple correlation to mercury concentrations in limestone or an assumption of 'typically observed' mercury concentrations in inputs are unsupported by available data. Furthermore, atmospheric emissions are highly variable due to an internal control mechanism that captures and loops mercury between the high-temperature kiln and low-temperature raw materials mill. Two models have been reported to predict emissions; however, they have not been benchmarked against data from the internal components that capture mercury and do not distinguish between mercury species, which have different sorption and desorption properties. Control strategies include technologies applied from other industries and technologies developed specifically for cement facilities. Reported technologies, listed from highest to lowest anticipated mercury removal, include purge of collected dust or raw meal, changes in feedstocks and fuels, wet scrubbing, cleaning of mercury enriched dust, dry sorbent injection, and dry and semi-dry scrubbing. The effectiveness of these technologies is limited by an inadequate understanding of sorption, desorption, and mercury species involved in internal loop mercury control. To comply with the mercury rule and to improve current mercury control technologies and practices, research is needed to advance fundamental knowledge regarding mercury species sorption and desorption dynamics on materials

  11. Capacity optimization and scheduling of a multiproduct manufacturing facility for biotech products.

    Science.gov (United States)

    Shaik, Munawar A; Dhakre, Ankita; Rathore, Anurag S; Patil, Nitin

    2014-01-01

    A general mathematical framework has been proposed in this work for scheduling of a multiproduct and multipurpose facility involving manufacturing of biotech products. The specific problem involves several batch operations occurring in multiple units involving fixed processing time, unlimited storage policy, transition times, shared units, and deterministic and fixed data in the given time horizon. The different batch operations are modeled using state-task network representation. Two different mathematical formulations are proposed based on discrete- and continuous-time representations leading to a mixed-integer linear programming model which is solved using General Algebraic Modeling System software. A case study based on a real facility is presented to illustrate the potential and applicability of the proposed models. The continuous-time model required less number of events and has a smaller problem size compared to the discrete-time model. © 2014 American Institute of Chemical Engineers.

  12. Potential criticality accident at the General Electric Nuclear Fuel and Component Manufacturing Facility, May 29, 1991

    International Nuclear Information System (INIS)

    1991-08-01

    At the General Electric Nuclear Fuel and Component Manufacturing facility, located near Wilmington, North Carolina, on May 28 and 29, 1991, approximately 150 kilograms of uranium were inadvertently transferred from safe process tanks to an unsafe tank located at the waste treatment facility, thus creating the potential for a localized criticality safety problem. The excess uranium was ultimately safely recovered when the tank contents were centrifuged to remove the uranium-bearing material. Subsequently, the US Nuclear Regulatory Commission dispatched an Incident Investigation Team to determine what happened, to identify probable causes, and to make appropriate findings and conclusions. This report describes the incident, the methodology used by the team in its investigation, and presents the team's findings and conclusions. 48 figs., 8 tabs

  13. Creation of a U.S. Phosphorescent OLED Lighting Panel Manufacturing Facility

    Energy Technology Data Exchange (ETDEWEB)

    Hack, Michael

    2013-09-30

    Universal Display Corporation (UDC) has pioneered high efficacy phosphorescent OLED (PHOLED™) technology to enable the realization of an exciting new form of high quality, energy saving solid-date lighting. In laboratory test devices, we have demonstrated greater than 100 lm/W conversion efficacy. In this program, Universal Display will demonstrate the scalability of its proprietary UniversalPHOLED technology and materials for the manufacture of white OLED lighting panels that meet commercial lighting targets. Moser Baer Technologies will design and build a U.S.- based pilot facility. The objective of this project is to establish a pilot phosphorescent OLED (PHOLED) manufacturing line in the U.S. Our goal is that at the end of the project, prototype lighting panels could be provided to U.S. luminaire manufacturers for incorporation into products to facilitate the testing of design concepts and to gauge customer acceptance, so as to facilitate the growth of the embryonic U.S. OLED lighting industry. In addition, the team will provide a cost of ownership analysis to quantify production costs including OLED performance metrics which relate to OLED cost such as yield, materials usage, cycle time, substrate area, and capital depreciation. This project was part of a new DOE initiative designed to help establish and maintain U.S. leadership in this program will support key DOE objectives by showing a path to meet Department of Energy Solid-State Lighting Manufacturing Roadmap cost targets, as well as meeting its efficiency targets by demonstrating the energy saving potential of our technology through the realization of greater than 76 lm/W OLED lighting panels by 2012.

  14. Use of fused deposit modeling for additive manufacturing in hospital facilities: European certification directives.

    Science.gov (United States)

    Otero, Joel J; Vijverman, An; Mommaerts, Maurice Y

    2017-09-01

    The goal of this study was to identify current European Union regulations governing hospital-based use of fused deposit modeling (FDM), as implemented via desktop three-dimensional (3D) printers. Literature and Internet sources were screened, searching for official documents, regulations/legislation, and views of specialized attorneys or consultants regarding European regulations for 3D printing or additive manufacturing (AM) in a healthcare facility. A detailed review of the latest amendment (2016) of the European Parliament and Council legislation for medical devices and its classification was performed, which has regularly updated published guidelines for medical devices, that are classified by type and duration of patient contact. As expected, regulations increase in accordance with the level (I-III) of classification. Custom-made medical devices are subject to different regulations than those controlling serially mass-produced items, as originally specified in 98/79/EC European Parliament and Council legislation (1993) and again recently amended (2016). Healthcare facilities undertaking in-house custom production are not obliged to fully follow the directives as stipulated, given an exception for this scenario (Article 4.4a, 98/79/EC). Patient treatment and diagnosis with the aid of customized 3D printing in a healthcare facility can be performed without fully meeting the European Parliament and Council legislation if the materials used are ISO 10993 certified and article 4.4a applies. Copyright © 2017 European Association for Cranio-Maxillo-Facial Surgery. Published by Elsevier Ltd. All rights reserved.

  15. Abatement of global warming gas emissions from semiconductor manufacturing processes by non-thermal plasma-catalyst systems

    Energy Technology Data Exchange (ETDEWEB)

    Chang, J-S.; Urashima, K. [McMaster Univ., McIARS and Dept. Eng. Phys., Hamilton, Ontario (Canada)

    2009-07-01

    Emission of various hazardous air pollutants (HAPs) and greenhouse gases including perfluoro-compounds (PFCs) from semiconductor industries may cause significant impact on human health and the global environment, has attracted much public attention. In this paper, an application of nonthermal plasma-adsorbent system for a removal of PFCs emission from semiconductor process flue gases is experimentally investigated. The non-thermal plasma reactor used is the ferro-electric packed-bed type barrier discharge plasma and adsorbent reactor used is Zeolite bed reactor. The results show that for a simulated semiconductor process flue gas with C{sub 2}F{sub 6} (2000ppm)/ CF{sub 4}(1000ppm)/ N{sub 2}O(1000ppm)/ N{sub 2}/ Air mixture, 54% of C{sub 2}F{sub 6} and 32% of CF{sub 4} were decomposed by the plasma reactor and 100% of C{sub 2}F{sub 6} and 98% of CF{sub 4} were removed by plasma reactor/Zeolite adsorbent hybrid system. For a simulated semiconductor process flue gas with NF{sub 3} (2000ppm)/ SiF{sub 4}(1000ppm)/ N{sub 2}O(200ppm)/ N{sub 2}/ Air mixture, 92% of NF{sub 3} and 32% of SiF{sub 4} were decomposed by the plasma reactor and total (100%) removal of the pollutant gases was achieved by plasma reactor/Zeolite adsorbent hybrid system. (author)

  16. Abatement of global warming gas emissions from semiconductor manufacturing processes by non-thermal plasma-catalyst systems

    International Nuclear Information System (INIS)

    Chang, J-S.; Urashima, K.

    2009-01-01

    Emission of various hazardous air pollutants (HAPs) and greenhouse gases including perfluoro-compounds (PFCs) from semiconductor industries may cause significant impact on human health and the global environment, has attracted much public attention. In this paper, an application of nonthermal plasma-adsorbent system for a removal of PFCs emission from semiconductor process flue gases is experimentally investigated. The non-thermal plasma reactor used is the ferro-electric packed-bed type barrier discharge plasma and adsorbent reactor used is Zeolite bed reactor. The results show that for a simulated semiconductor process flue gas with C 2 F 6 (2000ppm)/ CF 4 (1000ppm)/ N 2 O(1000ppm)/ N 2 / Air mixture, 54% of C 2 F 6 and 32% of CF 4 were decomposed by the plasma reactor and 100% of C 2 F 6 and 98% of CF 4 were removed by plasma reactor/Zeolite adsorbent hybrid system. For a simulated semiconductor process flue gas with NF 3 (2000ppm)/ SiF 4 (1000ppm)/ N 2 O(200ppm)/ N 2 / Air mixture, 92% of NF 3 and 32% of SiF 4 were decomposed by the plasma reactor and total (100%) removal of the pollutant gases was achieved by plasma reactor/Zeolite adsorbent hybrid system. (author)

  17. Mirror Fusion Test Facility-B (MFTF-B) axicell configuration: NbTi magnet system. Manufacturing/producibility final report. Volume 2

    International Nuclear Information System (INIS)

    Ritschel, A.J.; White, W.L.

    1985-05-01

    This Final MFTF-B Manufacturing/Producibility Report covers facilities, tooling plan, manufacturing sequence, schedule and performance, producibility, and lessons learned for the solenoid, axicell, and transition coils, as well as a deactivation plan, conclusions, references, and appendices

  18. Production of fiberglass/metal composite material suitable for building habitat and manufacturing facilities

    Science.gov (United States)

    1987-01-01

    The production of a fiberglass/metal composite material suitable for building habitats and manufacturing facilities was the project for Clemson. The concept and development of the knowledge necessary to produce glass fibers originated in the spring semester. During the summer, while at Johnson Space Center, fiberglass from a rock composition similar to ones found at the Apollo 16 site on the moon was successfully produced. The project this year was a continuation of last year's studies. We addressed the following problems which emerged as the work progressed: (1) Methods for coating the fibers with a metal were explored. We manufactured composites in two stages: Glass fibers without any coating on them; and fibers coated with metals as they were made. This proved to be a difficult process. Future activities include using a chemical vapor deposition process on fibers which have been made. (2) A glass furnace was developed which relies primarily on solar energy for melting the glass. The temperature of the melted glass is maintained by electrical means. The design is for 250 kg of glass per day. An electrical engineering student developed a scheme for controlling the melting and manufacturing process from the earth. This was done to minimize the human risk. Graphite refractories are relied on to contain the melt. (3) The glass composition chosen for the project is a relatively pure anorthite which is available in the highland regions of the lunar surface. A major problems with this material is that it melts at a comparatively high temperature. This problem will be solved by using graphite refractory materials for the furnace. The advantage of this glass composition is that it is very stable and does not tend to crystallize. (4) We have also refined the experimental furnace and fiber making machinery which we will be using at Johnson Space Center this summer. We believe that we will be able to draw and coat glass fibers in a vacuum for use in composites. We intend to

  19. Fiscal 1998 research achievement report. Development of key technology for high-efficiency semiconductor manufacturing process; 1998 nendo kokoritsu handotai seizo process kiban gijutsu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-05-01

    In the development of large-aperture/high-density plasma technology, research and development was carried out for balanced electron drift plasma technologies for uniform control of plasma density and the like, such as an excited plasma source and plasma drift to enable wide-range plasma generation in a chamber. In the development of high-efficiency exposure technology, studies were made for stable generation and control of short wavelength excimer laser and for higher-speed large-aperture mask writing by use of an electron beam. In the development of higher-speed processing and energy-efficient technologies, research and development was conducted involving probe card technology for increasing the speed of semiconductor inspection, software-aided virtual tester technology, local energy-efficient cleaning technology in wafer processing and transportation, sheet-type flexible manufacturing system, and the like. (NEDO)

  20. Design of a continuous emissions monitoring system at a manufacturing facility recycling hazardous waste

    International Nuclear Information System (INIS)

    Harlow, G.; Bartman, C.D.; Renfroe, J.

    1991-01-01

    In March 1988, Marine Shale Processors, Inc. (MSP) initiated a project to incorporate a continuous emissions monitoring system (CEMS) at its manufacturing facility in Amelia, Louisiana, which recycles hazardous material into light-weight, general purpose aggregate. The stimuli for the project were: To quantify stack gas emissions for the purpose of risk assessment; To use the data generated for process control and evaluation purposes; and, MSP's commitment to advance the science of continuous monitoring of stack gas emissions. In order to successfully respond to these goals, MSP sought a system which could monitor combustion products such as NOx, SO 2 , HCl and CO 2 , as well as speciated organic compounds. Several analytical technologies and sampling system designs were reviewed to determine the best fit to satisfy the requirements. A process mass spectrometer and a heated sample extraction subsystem were selected for the project. The purpose of this paper is to review the available analytical technologies for CEMS and sample extraction subsystems and to describe the CEMS now installed at MSP

  1. Respiratory symptoms as health status indicators in workers at ceramics manufacturing facilities.

    Science.gov (United States)

    Rondon, Edilaura Nunes; Silva, Regina Maria Veras Gonçalves da; Botelho, Clovis

    2011-01-01

    To assess the prevalence of respiratory symptoms and their association with sociodemographic variables and with the characteristics of the work environment. A cross-sectional study comprising 464 workers employed at ceramics manufacturing facilities located in the city of Várzea Grande, Brazil. Data were collected by means of a questionnaire comprising questions regarding sociodemographic variables, work environment characteristics, and respiratory symptoms. Data were analyzed by means of prevalence ratios and their respective 95% CIs between the dependent variable (respiratory symptoms) and the other explanatory variables. In the multivariate analysis, two hierarchical models were built, the response variables being "all respiratory symptoms" and "severe respiratory symptoms". In the sample studied, the prevalence of "all respiratory symptoms" was 78%, whereas that of "severe respiratory symptoms" was 35%. The factors associated with "all respiratory symptoms" were gender, age bracket, level of education, type of occupation, exposure to dust, and exposure to chemical products. The factors associated with "severe respiratory symptoms" were level of education, exposure to dust, and exposure to chemical products. Our results indicate the presence of upper and lower airway disease in the population studied.

  2. Pharmaceutical manufacturing facility discharges can substantially increase the pharmaceutical load to U.S. wastewaters

    Science.gov (United States)

    Scott, Tia-Marie; Phillips, Patrick J.; Kolpin, Dana W.; Colella, Kaitlyn M.; Furlong, Edward T.; Foreman, William T.; Gray, James L.

    2018-01-01

    Discharges from pharmaceutical manufacturing facilities (PMFs) previously have been identified as important sources of pharmaceuticals to the environment. Yet few studies are available to establish the influence of PMFs on the pharmaceutical source contribution to wastewater treatment plants (WWTPs) and waterways at the national scale. Consequently, a national network of 13 WWTPs receiving PMF discharges, six WWTPs with no PMF input, and one WWTP that transitioned through a PMF closure were selected from across the United States to assess the influence of PMF inputs on pharmaceutical loading to WWTPs. Effluent samples were analyzed for 120 pharmaceuticals and pharmaceutical degradates. Of these, 33 pharmaceuticals had concentrations substantially higher in PMF-influenced effluent (maximum 555,000 ng/L) compared to effluent from control sites (maximum 175 ng/L). Concentrations in WWTP receiving PMF input are variable, as discharges from PMFs are episodic, indicating that production activities can vary substantially over relatively short (several months) periods and have the potential to rapidly transition to other pharmaceutical products. Results show that PMFs are an important, national-scale source of pharmaceuticals to the environment.

  3. Offshoring in the Semiconductor Industry: A Historical Perspective

    OpenAIRE

    Brown, Clair; Linden, Greg

    2005-01-01

    Semiconductor design is a frequently-cited example of the new wave of offshoring and foreign-outsourcing of service sector jobs. It is certainly a concern to U.S. design engineers themselves. In addition to the current wave of white-collar outsourcing, the industry also has a rich experience with offshoring of manufacturing activity. Semiconductor companies were among the first to invest in offshore facilities to manufacture goods for imports back to the U.S. A brief review of these...

  4. 75 FR 38129 - Freescale Semiconductor, Inc., Hardware/Software Design and Manufacturing A Including On-Site...

    Science.gov (United States)

    2010-07-01

    ... Manufacturing A, Austin, Texas. The notice was published in the Federal Register on May 28, 2010 (75 FR 30070...Logic, Inc., Austin, TX; Amended Certification Regarding Eligibility To Apply for Worker Adjustment..., Design Solutions, Inc., Veriseo, SilconElite and MicroLogic, Inc. were employed on-site at the Austin...

  5. Characterization of uranium corrosion products involved in the March 13, 1998 fuel manufacturing facility pyrophoric event

    International Nuclear Information System (INIS)

    Totemeier, T.C.

    1999-01-01

    Uranium metal corrosion products from ZPPR fuel plates involved in the March 13, 1998 pyrophoric event in the Fuel Manufacturing Facility at Argonne National Laboratory-West were characterized using thermo-gravimetric analysis, X-ray diffraction, and BET gas sorption techniques. Characterization was performed on corrosion products in several different conditions: immediately after separation from the source metal, after low-temperature passivation, after passivation and extended vault storage, and after burning in the pyrophoric event. The ignition temperatures and hydride fractions of the corrosion product were strongly dependent on corrosion extent. Corrosion products from plates with corrosion extents less than 0.7% did not ignite in TGA testing, while products from plates with corrosion extents greater than 1.2% consistently ignited. Corrosion extent is defined as mass of corrosion products divided by the total mass of uranium. The hydride fraction increased with corrosion extent. There was little change in corrosion product properties after low-temperature passivation or vault storage. The burned products were not reactive and contained no hydride; the principal constituents were UO 2 and U 3 O 7 . The source of the event was a considerable quantity of reactive hydride present in the corrosion products. No specific ignition mechanism could be conclusively identified. The most likely initiator was a static discharge in the corrosion product from the 14th can as it was poured into the consolidation can. The available evidence does not support scenarios in which the powder in the consolidation can slowly self-heated to the ignition point, or in which the powder in the 14th can was improperly passivated

  6. Characterization of uranium corrosion products involved in the March 13, 1998 fuel manufacturing facility pyrophoric event.

    Energy Technology Data Exchange (ETDEWEB)

    Totemeier, T.C.

    1999-04-26

    Uranium metal corrosion products from ZPPR fuel plates involved in the March 13, 1998 pyrophoric event in the Fuel Manufacturing Facility at Argonne National Laboratory-West were characterized using thermo-gravimetric analysis, X-ray diffraction, and BET gas sorption techniques. Characterization was performed on corrosion products in several different conditions: immediately after separation from the source metal, after low-temperature passivation, after passivation and extended vault storage, and after burning in the pyrophoric event. The ignition temperatures and hydride fractions of the corrosion product were strongly dependent on corrosion extent. Corrosion products from plates with corrosion extents less than 0.7% did not ignite in TGA testing, while products from plates with corrosion extents greater than 1.2% consistently ignited. Corrosion extent is defined as mass of corrosion products divided by the total mass of uranium. The hydride fraction increased with corrosion extent. There was little change in corrosion product properties after low-temperature passivation or vault storage. The burned products were not reactive and contained no hydride; the principal constituents were UO{sub 2} and U{sub 3}O{sub 7}. The source of the event was a considerable quantity of reactive hydride present in the corrosion products. No specific ignition mechanism could be conclusively identified. The most likely initiator was a static discharge in the corrosion product from the 14th can as it was poured into the consolidation can. The available evidence does not support scenarios in which the powder in the consolidation can slowly self-heated to the ignition point, or in which the powder in the 14th can was improperly passivated.

  7. A Novel Method for Control Performance Assessment with Fractional Order Signal Processing and Its Application to Semiconductor Manufacturing

    Directory of Open Access Journals (Sweden)

    Kai Liu

    2018-06-01

    Full Text Available The significant task for control performance assessment (CPA is to review and evaluate the performance of the control system. The control system in the semiconductor industry exhibits a complex dynamic behavior, which is hard to analyze. This paper investigates the interesting crossover properties of Hurst exponent estimations and proposes a novel method for feature extraction of the nonlinear multi-input multi-output (MIMO systems. At first, coupled data from real industry are analyzed by multifractal detrended fluctuation analysis (MFDFA and the resultant multifractal spectrum is obtained. Secondly, the crossover points with spline fit in the scale-law curve are located and then employed to segment the entire scale-law curve into several different scaling regions, in which a single Hurst exponent can be estimated. Thirdly, to further ascertain the origin of the multifractality of control signals, the generalized Hurst exponents of the original series are compared with shuffled data. At last, non-Gaussian statistical properties, multifractal properties and Hurst exponents of the process control variables are derived and compared with different sets of tuning parameters. The results have shown that CPA of the MIMO system can be better employed with the help of fractional order signal processing (FOSP.

  8. Effect of rotating shift work on childbearing and birth weight: a study of women working in a semiconductor manufacturing factory.

    Science.gov (United States)

    Lin, Yu-Cheng; Chen, Mei-Huei; Hsieh, Chia-Jung; Chen, Pau-Chung

    2011-05-01

    Stable circadian rhythm is important for both maternal and fetal health. This retrospective analysis of women in a semiconductor factory evaluated the effect of shift work exposure on childbearing and birth weight. Records of 440 female employees (initial mean age: 28.4 years) including 111 mothers who had 158 live births during the period of observation (1997-2007) were reviewed. The data analyzed included maternal age, general health condition, highest educational level, life-style and occupational factors, as well as newborn gender, birth weight, birth order and gestational age. The childbearing rates of female workers on three different work schedules (consistent daytime work (CDW), intermittent (i-) or persistent (p-) rotating shift works (RSW)) were 32.1%, 20.0% and 25.4%, respectively (P=0.047). After controlling for potential confounding factors, childbearing rates among women with CDW exceeded those of shift workers (odds ratio (OR), 1.7; 95% confidence interval (CI), 1.0-3.0). The birth weights of newborns from mothers on the three work schedules (CDW, i-RSW and p-RSW) were significantly different (3271.7±395.4, 3251.3±460.9, and 2998.5±381.2 g, respectively (Pmanufacturing factory. Work schedules should be carefully planned for female employees who are pregnant or preparing for pregnancy. Prenatal evaluations for mothers with persistent day-night rotating shift work exposures are especially necessary.

  9. Integration of a nonmetallic electrostatic precipitator and a wet scrubber for improved removal of particles and corrosive gas cleaning in semiconductor manufacturing industries.

    Science.gov (United States)

    Kim, Hak-Joon; Han, Bangwoo; Kim, Yong-Jin; Yoa, Seok-Jun; Oda, Tetsuji

    2012-08-01

    To remove particles in corrosive gases generated by semiconductor industries, we have developed a novel non-metallic, two-stage electrostatic precipitator (ESP). Carbon brush electrodes and grounded carbon fiber-reinforced polymer (CFRP) form the ionization stage, and polyvinyl chloride collection plates are used in the collection stage of the ESP The collection performance of the ESP downstream of a wet scrubber was evaluated with KC1, silica, and mist particles (0.01-10 pm), changing design and operation parameters such as the ESP length, voltage, and flow rate. A long-term and regeneration performance (12-hr) test was conducted at the maximum operation conditions of the scrubber and ESP and the performance was then demonstrated for 1 month with exhaust gases from wet scrubbers at the rooftop of a semiconductor manufacturing plant in Korea. The results showed that the electrical and collection performance of the ESP (16 channels, 400x400 mm2) was maintained with different grounded plate materials (stainless steel and CFRP) and different lengths of the ionization stage. The collection efficiency of the ESP at high air velocity was enhanced with increases in applied voltages and collection plate lengths. The ESP (16 channels with 100 mm length, 400x400 mm2x540 mm with a 10-mm gap) removed more than 90% of silica and mistparticles with 10 and 12 kV applied to the ESPat the air velocity of 2 m/s and liquid-to-gas ratio of 3.6 L/m3. Decreased performance after 13 hours ofcontinuous operation was recovered to the initial performance level by 5 min of water washing. Moreover during the 1-month operation at the demonstration site, the ESP showed average collection efficiencies of 97% based on particle number and 92% based on total particle mass, which were achieved with a much smaller specific corona power of 0.28 W/m3/hr compared with conventional ESPs.

  10. Manufacturing and test of a low cost polypropylene bag to reduce the radioactive gas released by a radiopharmaceutical production facility

    Energy Technology Data Exchange (ETDEWEB)

    Tavares, Jose Carlos Freitas; Lacerda, Marco Aurelio de Sousa, E-mail: jcft@cdtn.b, E-mail: masl@cdtn.b [Centro de Desenvolvimento da Tecnologia Nuclear (SEPRA/ CDTN/CNEN-MG) Belo Horizonte, MG (Brazil). Servico de Protecao Radiologica; Nascimento, Leonardo Tafas Constantino do; Silva, Juliana Batista da, E-mail: ltcn@cdtn.b, E-mail: silvajb@cdtn.b [Centro de Desenvolvimento da Tecnologia Nuclear (SECPRA/ CDTN/CNEN-MG) Belo Horizonte, MG (Brazil). Secao de Producao de Radiofarmacos

    2011-07-01

    The main objective of this work was to evaluate the efficiency of a plastic gas storage bag to reduce the radioactive gas released by the chimney of a radiopharmaceutical production facility during the 2-[{sup 18}F]fluoro-2- deoxy-D-glucose ({sup 18}FDG) synthesis. The studied facility was the Development Centre of Nuclear Technology (CDTN/CNEN) in Belo Horizonte, Brazil. The bag was manufactured utilizing foils of polypropylene of 360 x 550 x 0.16 mm and disposable components of the cassette of the synthesizer. Two synthesis of {sup 18}FDG were done using the same hot cell and synthesizer to evaluate the efficiency of the bag. The manufactured bag was put in the gas exit of the synthesizer and the activity reported by the online radiation monitoring system in the first synthesis. These results were compared to the activity released in a synthesis performed without the bag. We observed when the bag was used the amount released was about 0.2% in 270 minutes. The second synthesis was performed without the bag, about 7,1% of the input activity was released by the exhaust of the facility in the same time interval. The bag presented a very good efficiency in the reducing of the radioactive gas released by the chimney of the radiopharmaceutical production facility. (author)

  11. Manufacturing and test of a low cost polypropylene bag to reduce the radioactive gas released by a radiopharmaceutical production facility

    International Nuclear Information System (INIS)

    Tavares, Jose Carlos Freitas; Lacerda, Marco Aurelio de Sousa; Nascimento, Leonardo Tafas Constantino do; Silva, Juliana Batista da

    2011-01-01

    The main objective of this work was to evaluate the efficiency of a plastic gas storage bag to reduce the radioactive gas released by the chimney of a radiopharmaceutical production facility during the 2-[ 18 F]fluoro-2- deoxy-D-glucose ( 18 FDG) synthesis. The studied facility was the Development Centre of Nuclear Technology (CDTN/CNEN) in Belo Horizonte, Brazil. The bag was manufactured utilizing foils of polypropylene of 360 x 550 x 0.16 mm and disposable components of the cassette of the synthesizer. Two synthesis of 18 FDG were done using the same hot cell and synthesizer to evaluate the efficiency of the bag. The manufactured bag was put in the gas exit of the synthesizer and the activity reported by the online radiation monitoring system in the first synthesis. These results were compared to the activity released in a synthesis performed without the bag. We observed when the bag was used the amount released was about 0.2% in 270 minutes. The second synthesis was performed without the bag, about 7,1% of the input activity was released by the exhaust of the facility in the same time interval. The bag presented a very good efficiency in the reducing of the radioactive gas released by the chimney of the radiopharmaceutical production facility. (author)

  12. The need for powder characterisation in the additive manufacturing industry and the establishment of a national facility

    Directory of Open Access Journals (Sweden)

    Benson, Jeffrey Malcolm

    2015-08-01

    Full Text Available The characteristics of powders used in additive manufacturing can have significant effects on process efficiencies and the quality of the final products. Powder sizes and morphologies need to be optimised for a particular process, and this requires the facilities to perform these measurements as well as provide a quality check on powder batches that are purchased. The establishment of a national powder characterisation facility has been identified by the Titanium Centre of Competence (a DST-funded initiative as a critical form of support for the development of a South African titanium metal industry. This paper discusses what effect the different powder characteristics can have on the selective laser sintering processes, as well as the state of development of this national facility.

  13. Evaluation of Quantitative Exposure Assessment Method for Nanomaterials in Mixed Dust Environments: Application in Tire Manufacturing Facilities.

    Science.gov (United States)

    Kreider, Marisa L; Cyrs, William D; Tosiano, Melissa A; Panko, Julie M

    2015-11-01

    Current recommendations for nanomaterial-specific exposure assessment require adaptation in order to be applied to complicated manufacturing settings, where a variety of particle types may contribute to the potential exposure. The purpose of this work was to evaluate a method that would allow for exposure assessment of nanostructured materials by chemical composition and size in a mixed dust setting, using carbon black (CB) and amorphous silica (AS) from tire manufacturing as an example. This method combined air sampling with a low pressure cascade impactor with analysis of elemental composition by size to quantitatively assess potential exposures in the workplace. This method was first pilot-tested in one tire manufacturing facility; air samples were collected with a Dekati Low Pressure Impactor (DLPI) during mixing where either CB or AS were used as the primary filler. Air samples were analyzed via scanning transmission electron microscopy (STEM) coupled with energy dispersive spectroscopy (EDS) to identify what fraction of particles were CB, AS, or 'other'. From this pilot study, it was determined that ~95% of all nanoscale particles were identified as CB or AS. Subsequent samples were collected with the Dekati Electrical Low Pressure Impactor (ELPI) at two tire manufacturing facilities and analyzed using the same methodology to quantify exposure to these materials. This analysis confirmed that CB and AS were the predominant nanoscale particle types in the mixing area at both facilities. Air concentrations of CB and AS ranged from ~8900 to 77600 and 400 to 22200 particles cm(-3), respectively. This method offers the potential to provide quantitative estimates of worker exposure to nanoparticles of specific materials in a mixed dust environment. With pending development of occupational exposure limits for nanomaterials, this methodology will allow occupational health and safety practitioners to estimate worker exposures to specific materials, even in scenarios

  14. Effects of work-related factors on the breastfeeding behavior of working mothers in a Taiwanese semiconductor manufacturer: a cross-sectional survey.

    Science.gov (United States)

    Chen, Yi Chun; Wu, Ya-Chi; Chie, Wei-Chu

    2006-06-21

    In recent years, the creation of supportive environments for encouraging mothers to breastfeed their children has emerged as a key health issue for women and children. The provision of lactation rooms and breast pumping breaks have helped mothers to continue breastfeeding after returning to work, but their effectiveness is uncertain. The aim of this study was to assess the effects of worksite breastfeeding-friendly policies and work-related factors on the behaviour of working mothers. This study was conducted at a large Taiwanese semiconductor manufacturer in August-September 2003. Questionnaires were used to collect data on female employees' breastfeeding behaviour, child rearing and work status when raising their most recently born child. A total of 998 valid questionnaires were collected, giving a response rate of 75.3%. The results showed that 66.9% of survey respondents breastfed initially during their maternity leave, which averaged 56 days. Despite the provision of lactation rooms and breast pumping breaks, only 10.6% mothers continued to breastfeed after returning to work, primarily office workers and those who were aware of their company's breastfeeding-friendly policies. In conclusion, breastfeeding-friendly policies can significantly affect breastfeeding behaviour. However, an unfavourable working environment, especially for fab workers, can make it difficult to implement breastfeeding measures. With health professionals emphasizing that the importance of breastfeeding for infant health, and as only females can perform lactation, it is vital that women's work "productive role" and family "reproductive role" be respected and accommodated by society.

  15. Industrial Manufacturing Facilities, Located during MicroData field address collection 2004-2006. Kept in Spillman database for retrieval., Published in 2004, Vilas County Government.

    Data.gov (United States)

    NSGIC Local Govt | GIS Inventory — Industrial Manufacturing Facilities dataset current as of 2004. Located during MicroData field address collection 2004-2006. Kept in Spillman database for retrieval..

  16. Hybrid and disposable facilities for manufacturing of biopharmaceuticals: pros and cons.

    Science.gov (United States)

    Ravisé, Aline; Cameau, Emmanuelle; De Abreu, Georges; Pralong, Alain

    2009-01-01

    Modern biotechnology has grown over the last 35 years to a maturing industry producing and delivering high-value biopharmaceuticals that yield important medical and economical benefits. The constantly increasing need for biopharmaceuticals and significant costs related to time-consuming R&D work makes this industry risky and highly competitive. This trend is confirmed by the important number of biopharmaceuticals that are actually under development at all stages by all major pharmaceutical industry companies. A consequence of this evolution is an increasing need for development and manufacturing capacity. The build up of traditional - stainless steel - technology is complicated, time consuming and very expensive. The decision for such a major investment needs to be taken early in the development cycle of a promising drug to cope with future demands for clinical trials and product launch. Possibilities for the reduction of R&D and manufacturing costs are therefore of significant interest in order to be competitive.In this chapter, four case studies are presented which outline ways to reduce significantly R&D and manufacturing costs by using disposable technology in the frame of a the transfer of an antibody manufacturing process, the preparation of media and buffers in commercial manufacturing and a direct comparison of a traditional and a fully disposable pilot plant.

  17. An analysis of workplace exposures to benzene over four decades at a petrochemical processing and manufacturing facility (1962-1999).

    Science.gov (United States)

    Sahmel, J; Devlin, K; Burns, A; Ferracini, T; Ground, M; Paustenbach, D

    2013-01-01

    Benzene, a known carcinogen, can be generated as a by-product during the use of petroleum-based raw materials in chemical manufacturing. The aim of this study was to analyze a large data set of benzene air concentration measurements collected over nearly 40 years during routine employee exposure monitoring at a petrochemical manufacturing facility. The facility used ethane, propane, and natural gas as raw materials in the production of common commercial materials such as polyethylene, polypropylene, waxes, adhesives, alcohols, and aldehydes. In total, 3607 benzene air samples were collected at the facility from 1962 to 1999. Of these, in total 2359 long-term (>1 h) personal exposure samples for benzene were collected during routine operations at the facility between 1974 and 1999. These samples were analyzed by division, department, and job title to establish employee benzene exposures in different areas of the facility over time. Sampling data were also analyzed by key events over time, including changes in the occupational exposure limits (OELs) for benzene and key equipment process changes at the facility. Although mean benzene concentrations varied according to operation, in nearly all cases measured benzene quantities were below the OEL in place at the time for benzene (10 ppm for 1974-1986 and 1 ppm for 1987-1999). Decreases in mean benzene air concentrations were also found when data were evaluated according to 7- to 10-yr periods following key equipment process changes. Further, an evaluation of mortality rates for a retrospective employee cohort (n = 3938) demonstrated that the average personal benzene exposures at this facility (0.89 ppm for the period 1974-1986 and 0.125 ppm for the period 1987-1999) did not result in increased standardized mortality ratio (SMRs) for diseases or malignancies of the lymphatic system. The robust nature of this data set provides comprehensive exposure information that may be useful for assessing human benzene exposures at

  18. Low-Gravity Centrifuge Facilities for Asteroid Lander and Material Processing and Manufacturing

    Science.gov (United States)

    Asphaug, E.; Thangavelautham, J.; Schwartz, S.

    2018-02-01

    We are developing space centrifuge research facilities for attaining low-gravity to micro-gravity geological environmental conditions representative of the environment on the surfaces of asteroids and comets.

  19. Hybrid and Disposable Facilities for Manufacturing of Biopharmaceuticals: Pros and Cons

    Science.gov (United States)

    Ravisé, Aline; Cameau, Emmanuelle; de Abreu, Georges; Pralong, Alain

    Modern biotechnology has grown over the last 35 years to a maturing industry producing and delivering high-value biopharmaceuticals that yield important medical and economical benefits. The constantly increasing need for biopharmaceuticals and significant costs related to time-consuming R&D work makes this industry risky and highly competitive. This trend is confirmed by the important number of biopharmaceuticals that are actually under development at all stages by all major pharmaceutical industry companies. A consequence of this evolution is an increasing need for development and manufacturing capacity. The build up of traditional - stainless steel - technology is complicated, time consuming and very expensive. The decision for such a major investment needs to be taken early in the development cycle of a promising drug to cope with future demands for clinical trials and product launch. Possibilities for the reduction of R&D and manufacturing costs are therefore of significant interest in order to be competitive.

  20. The Impact of Pollution Prevention on Toxic Environmental Releases from U.S. Manufacturing Facilities.

    Science.gov (United States)

    Ranson, Matthew; Cox, Brendan; Keenan, Cheryl; Teitelbaum, Daniel

    2015-11-03

    Between 1991 and 2012, the facilities that reported to the U.S. Environmental Protection Agency's Toxic Release Inventory (TRI) Program conducted 370,000 source reduction projects. We use this data set to conduct the first quasi-experimental retrospective evaluation of how implementing a source reduction (pollution prevention) project affects the quantity of toxic chemicals released to the environment by an average industrial facility. We use a differences-in-differences methodology, which measures how implementing a source reduction project affects a facility's releases of targeted chemicals, relative to releases of (a) other untargeted chemicals from the same facility, or (b) the same chemical from other facilities in the same industry. We find that the average source reduction project causes a 9-16% decrease in releases of targeted chemicals in the year of implementation. Source reduction techniques vary in effectiveness: for example, raw material modification causes a large decrease in releases, while inventory control has no detectable effect. Our analysis suggests that in aggregate, the source reduction projects carried out in the U.S. since 1991 have prevented between 5 and 14 billion pounds of toxic releases.

  1. Facility location, capacity acquisition and technology selection models for manufacturing strategy planning

    OpenAIRE

    Verter, Vedat

    1993-01-01

    Ankara : The Institute of Engineering and Science, Bilkent Univ., 1993. Thesis (Ph.D.) -- Bilkent University, 1993. Includes bibliographical references leaves 129-141. The primary aim of this dissertation research is to contribute to the manufacturing strategy planning process. The firm is perceived as a value chain which can be represented by a production-distribution network. Structural decisions regarding the value chain of a firm are the means to implement the firm’s manufacturin...

  2. Challenges to Lean Six Sigma Implementation - A Case Study of a Manufacturing Facility in Singapore

    OpenAIRE

    Teo, I Jyn Alvin

    2009-01-01

    Companies today constantly seek to lower costs, maintain high level of quality and improve delivery for both manufactured products and services to achieve and sustain competitive advantage. Most companies seek to achieve all this through the implementation of continuous improvement initiatives. Amongst the various continuous improvement initiatives, Lean and Six Sigma have been the most popular and widely adopted. In recent years, the term Lean Six Sigma has been used to describe a management...

  3. Effects of work-related factors on the breastfeeding behavior of working mothers in a Taiwanese semiconductor manufacturer: a cross-sectional survey

    Directory of Open Access Journals (Sweden)

    Chie Wei-Chu

    2006-06-01

    Full Text Available Abstract Background In recent years, the creation of supportive environments for encouraging mothers to breastfeed their children has emerged as a key health issue for women and children. The provision of lactation rooms and breast pumping breaks have helped mothers to continue breastfeeding after returning to work, but their effectiveness is uncertain. The aim of this study was to assess the effects of worksite breastfeeding-friendly policies and work-related factors on the behaviour of working mothers. Methods This study was conducted at a large Taiwanese semiconductor manufacturer in August-September 2003. Questionnaires were used to collect data on female employees' breastfeeding behaviour, child rearing and work status when raising their most recently born child. A total of 998 valid questionnaires were collected, giving a response rate of 75.3%. Results The results showed that 66.9% of survey respondents breastfed initially during their maternity leave, which averaged 56 days. Despite the provision of lactation rooms and breast pumping breaks, only 10.6% mothers continued to breastfeed after returning to work, primarily office workers and those who were aware of their company's breastfeeding-friendly policies. Conclusion In conclusion, breastfeeding-friendly policies can significantly affect breastfeeding behaviour. However, an unfavourable working environment, especially for fab workers, can make it difficult to implement breastfeeding measures. With health professionals emphasizing that the importance of breastfeeding for infant health, and as only females can perform lactation, it is vital that women's work "productive role" and family "reproductive role" be respected and accommodated by society.

  4. A similarity score-based two-phase heuristic approach to solve the dynamic cellular facility layout for manufacturing systems

    Science.gov (United States)

    Kumar, Ravi; Singh, Surya Prakash

    2017-11-01

    The dynamic cellular facility layout problem (DCFLP) is a well-known NP-hard problem. It has been estimated that the efficient design of DCFLP reduces the manufacturing cost of products by maintaining the minimum material flow among all machines in all cells, as the material flow contributes around 10-30% of the total product cost. However, being NP hard, solving the DCFLP optimally is very difficult in reasonable time. Therefore, this article proposes a novel similarity score-based two-phase heuristic approach to solve the DCFLP optimally considering multiple products in multiple times to be manufactured in the manufacturing layout. In the first phase of the proposed heuristic, a machine-cell cluster is created based on similarity scores between machines. This is provided as an input to the second phase to minimize inter/intracell material handling costs and rearrangement costs over the entire planning period. The solution methodology of the proposed approach is demonstrated. To show the efficiency of the two-phase heuristic approach, 21 instances are generated and solved using the optimization software package LINGO. The results show that the proposed approach can optimally solve the DCFLP in reasonable time.

  5. Distribution of perfluorooctane sulfonate and other perfluorochemicals in the ambient environment around a manufacturing facility in China.

    Science.gov (United States)

    Wang, Yawei; Fu, Jianjie; Wang, Thanh; Liang, Yong; Pan, Yuanyuan; Cai, Yaqi; Jiang, Guibin

    2010-11-01

    Perfluorinated compounds (PFCs) can be released to the surrounding environment during manufacturing and usage of PFC containing products, which are considered as main direct sources of PFCs in the environment. This study evaluates the release of perfluorooctane sulfonate (PFOS) and other PFCs to the ambient environment around a manufacturing plant. Among the nine PFCs analyzed, only PFOS, perfluorooctanoic acid (PFOA), and perfluorohexane sulfonate (PFHxS) were found in dust, water, soil, and chicken eggs. Very high concentrations of PFOS and PFOA were found in dust from the production storage, raw material stock room, and sulfonation workshop in the manufacturing facility, with the highest value at 4962 μg/g (dry weight) for PFOS and 160 μg/g for PFOA. A decreasing trend of the three PFCs concentrations in soils, water, and chicken eggs with increasing distance from the plant was found, indicating the production site to be the primary source of PFCs in this region. Risk quotients (RQs) assessment for surface water >500 m away from the plant were less than unity. Risk assessment of PFOS using predicted no-effect concentration (PNEC, 3.23 ng/g on a logarithmic scale) indicated no immediate ecological risk of a reduction in offspring survival. PFOS concentrations in most egg samples did not exceed the benchmark concentration derived in setting a reference dose for noncancer health effects (0.025 μg/(kgxd)).

  6. Manufacturing progress of EDIPO. A Nb{sub 3}Sn-dipole for the ITER conductor test facility

    Energy Technology Data Exchange (ETDEWEB)

    Borlein, M.; Amend, J.; Theisen, W.; Walter, W. [Babcock Noell GmbH, Wuerzburg (Germany); Baker, W.; Fernandez-Cano, E.; Portone, A.; Salpietro, E. [Fusion For Energy F4E, Barcelona (Spain)

    2010-05-15

    ITER (International Thermonuclear Experimental Reactor) is a joint international research and development project that aims to demonstrate the scientific and technical feasibility of fusion power. For the construction of ITER and the manufacturing of its components, high quality standards must be met. Especially the coils of the magnet system - the heart of the ITER machine - are unique in size and complexity. Therefore the magnet coil manufacturing must be followed by a lot of quality measures. One of the necessary tests is the control of the conductor - to be sure that the conductor fulfils the technical performance needed for a proper magnet operation. As the conductor will experience a magnetic field of approx. 12-13 T during operation, it has to be tested within a magnetic background field. The European Dipole-magnet, called EDIPO, will be the heart of this conductor test facility which will be constructed at the CRPP Villigen (CH). Following the presentation, given in the Annual Meeting on Nuclear Technology in 2007, this paper shows the current status of the manufacturing of this complex Nb{sub 3}Sn-Magnet. At first, the design of the EDIPO shall be described. (orig.)

  7. NIOSH Field Studies Team Assessment: Worker Exposure to Aerosolized Metal Oxide Nanoparticles in a Semiconductor Fabrication Facility

    OpenAIRE

    Brenner, Sara A.; Neu-Baker, Nicole M.; Eastlake, Adrienne C.; Beaucham, Catherine C.; Geraci, Charles L.

    2016-01-01

    The ubiquitous use of engineered nanomaterials – particulate materials measuring approximately 1–100 nanometers (nm) on their smallest axis, intentionally engineered to express novel properties – in semiconductor fabrication poses unique issues for protecting worker health and safety. Use of new substances or substances in a new form may present hazards that have yet to be characterized for their acute or chronic health effects. Uncharacterized or emerging occupational health hazards may exis...

  8. Efficacy of using multiple open-path Fourier transform infrared (OP-FTIR) spectrometers in an odor emission episode investigation at a semiconductor manufacturing plant

    International Nuclear Information System (INIS)

    Tsao, Yung-Chieh; Wu, Chang-Fu; Chang, Pao-Erh; Chen, Shin-Yu; Hwang, Yaw-Huei

    2011-01-01

    This study evaluated the efficacy of simultaneously employing three open-path Fourier transform infrared (OP-FTIR) spectrometers with 3-day consecutive monitoring, using an odor episode as an example. The corresponding monitoring paths were allocated among the possible emission sources of a semiconductor manufacturing plant and the surrounding optoelectronic and electronic-related factories, which were located in a high-tech industrial park. There was a combined total odor rate of 43.9% for the three monitoring paths, each comprised of 736 continuous 5-minute monitoring records and containing detectable odor compounds, such as ammonia, ozone, butyl acetate, and propylene glycol monomethyl ether acetate (PGMEA). The results of the logistic regression model indicated that the prevailing south wind and the OP-FTIR monitoring path closest to the emission source in down-wind direction resulted in a high efficacy for detecting odorous samples with odds ratios (OR) of 3.8 (95% confidence interval (CI): 2.9-5.0) and 5.1 (95% CI: 3.6-7.2), respectively. Meanwhile, the odds ratio for detecting ammonia odorous samples was 7.5 for Path II, which was downwind closer to the possible source, as compared to Path III, downwind far away from the possible source. PGMEA could not be monitored at Path II but could be at Path III, indicating the importance of the monitoring path and flow ejection velocities inside the stacks on the monitoring performance of OP-FTIR. Besides, an odds ratio of 5.1 for odorous sample detection was obtained with south prevailing wind comprising 65.0% of the monitoring time period. In general, it is concluded that OP-FTIR operated with multiple paths simultaneously shall be considered for investigation on relatively complicated episodes such as emergency of chemical release, multiple-source emission and chemical monitoring for odor in a densely populated plant area to enhance the efficacy of OP-FTIR monitoring. - Research highlights: → To conduct multi

  9. Efficacy of using multiple open-path Fourier transform infrared (OP-FTIR) spectrometers in an odor emission episode investigation at a semiconductor manufacturing plant

    Energy Technology Data Exchange (ETDEWEB)

    Tsao, Yung-Chieh; Wu, Chang-Fu [Institute of Occupational Medicine and Industrial Hygiene, National Taiwan University College of Public Health, Taipei City 100, Taiwan (China); Chang, Pao-Erh; Chen, Shin-Yu [Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu City 310, Taiwan 310 (China); Hwang, Yaw-Huei, E-mail: yhhwang@ntu.edu.tw [Institute of Occupational Medicine and Industrial Hygiene, National Taiwan University College of Public Health, Taipei City 100, Taiwan (China); Department of Public Health, College of Public Health, National Taiwan University, Taipei City 100, Taiwan (China)

    2011-08-01

    This study evaluated the efficacy of simultaneously employing three open-path Fourier transform infrared (OP-FTIR) spectrometers with 3-day consecutive monitoring, using an odor episode as an example. The corresponding monitoring paths were allocated among the possible emission sources of a semiconductor manufacturing plant and the surrounding optoelectronic and electronic-related factories, which were located in a high-tech industrial park. There was a combined total odor rate of 43.9% for the three monitoring paths, each comprised of 736 continuous 5-minute monitoring records and containing detectable odor compounds, such as ammonia, ozone, butyl acetate, and propylene glycol monomethyl ether acetate (PGMEA). The results of the logistic regression model indicated that the prevailing south wind and the OP-FTIR monitoring path closest to the emission source in down-wind direction resulted in a high efficacy for detecting odorous samples with odds ratios (OR) of 3.8 (95% confidence interval (CI): 2.9-5.0) and 5.1 (95% CI: 3.6-7.2), respectively. Meanwhile, the odds ratio for detecting ammonia odorous samples was 7.5 for Path II, which was downwind closer to the possible source, as compared to Path III, downwind far away from the possible source. PGMEA could not be monitored at Path II but could be at Path III, indicating the importance of the monitoring path and flow ejection velocities inside the stacks on the monitoring performance of OP-FTIR. Besides, an odds ratio of 5.1 for odorous sample detection was obtained with south prevailing wind comprising 65.0% of the monitoring time period. In general, it is concluded that OP-FTIR operated with multiple paths simultaneously shall be considered for investigation on relatively complicated episodes such as emergency of chemical release, multiple-source emission and chemical monitoring for odor in a densely populated plant area to enhance the efficacy of OP-FTIR monitoring. - Research highlights: {yields} To conduct

  10. Analysis of adverse events with Essure hysteroscopic sterilization reported to the Manufacturer and User Facility Device Experience database.

    Science.gov (United States)

    Al-Safi, Zain A; Shavell, Valerie I; Hobson, Deslyn T G; Berman, Jay M; Diamond, Michael P

    2013-01-01

    The Manufacturer and User Facility Device Experience database may be useful for clinicians using a Food and Drug Administration-approved medical device to identify the occurrence of adverse events and complications. We sought to analyze and investigate reports associated with the Essure hysteroscopic sterilization system (Conceptus Inc., Mountain View, CA) using this database. Retrospective review of the Manufacturer and User Facility Device Experience database for events related to Essure hysteroscopic sterilization from November 2002 to February 2012 (Canadian Task Force Classification III). Online retrospective review. Online reports of patients who underwent Essure tubal sterilization. Essure tubal sterilization. Four hundred fifty-seven adverse events were reported in the study period. Pain was the most frequently reported event (217 events [47.5%]) followed by delivery catheter malfunction (121 events [26.4%]). Poststerilization pregnancy was reported in 61 events (13.3%), of which 29 were ectopic pregnancies. Other reported events included perforation (90 events [19.7%]), abnormal bleeding (44 events [9.6%]), and microinsert malposition (33 events [7.2%]). The evaluation and management of these events resulted in an additional surgical procedure in 270 cases (59.1%), of which 44 were hysterectomies. Sixty-one unintended poststerilization pregnancies were reported in the study period, of which 29 (47.5%) were ectopic gestations. Thus, ectopic pregnancy must be considered if a woman becomes pregnant after Essure hysteroscopic sterilization. Additionally, 44 women underwent hysterectomy after an adverse event reported to be associated with the use of the device. Copyright © 2013 AAGL. Published by Elsevier Inc. All rights reserved.

  11. A facile approach to manufacturing non-ionic surfactant nanodipsersions using proniosome technology and high-pressure homogenization.

    Science.gov (United States)

    Najlah, Mohammad; Hidayat, Kanar; Omer, Huner K; Mwesigwa, Enosh; Ahmed, Waqar; AlObaidy, Kais G; Phoenix, David A; Elhissi, Abdelbary

    2015-03-01

    In this study, a niosome nanodispersion was manufactured using high-pressure homogenization following the hydration of proniosomes. Using beclometasone dipropionate (BDP) as a model drug, the characteristics of the homogenized niosomes were compared with vesicles prepared via the conventional approach of probe-sonication. Particle size, zeta potential, and the drug entrapment efficiency were similar for both size reduction mechanisms. However, high-pressure homogenization was much more efficient than sonication in terms of homogenization output rate, avoidance of sample contamination, offering a greater potential for a large-scale manufacturing of noisome nanodispersions. For example, high-pressure homogenization was capable of producing small size niosomes (209 nm) using a short single-step of size reduction (6 min) as compared with the time-consuming process of sonication (237 nm in >18 min) and the BDP entrapment efficiency was 29.65% ± 4.04 and 36.4% ± 2.8. In addition, for homogenization, the output rate of the high-pressure homogenization was 10 ml/min compared with 0.83 ml/min using the sonication protocol. In conclusion, a facile, applicable, and highly efficient approach for preparing niosome nanodispersions has been established using proniosome technology and high-pressure homogenization.

  12. Towards co-packaging of photonics and microelectronics in existing manufacturing facilities

    Science.gov (United States)

    Janta-Polczynski, Alexander; Cyr, Elaine; Bougie, Jerome; Drouin, Alain; Langlois, Richard; Childers, Darrell; Takenobu, Shotaro; Taira, Yoichi; Lichoulas, Ted W.; Kamlapurkar, Swetha; Engelmann, Sebastian; Fortier, Paul; Boyer, Nicolas; Barwicz, Tymon

    2018-02-01

    The impact of integrated photonics on optical interconnects is currently muted by challenges in photonic packaging and in the dense integration of photonic modules with microelectronic components on printed circuit boards. Single mode optics requires tight alignment tolerance for optical coupling and maintaining this alignment in a cost-efficient package can be challenging during thermal excursions arising from downstream microelectronic assembly processes. In addition, the form factor of typical fiber connectors is incompatible with the dense module integration expected on printed circuit boards. We have implemented novel approaches to interfacing photonic chips to standard optical fibers. These leverage standard high throughput microelectronic assembly tooling and self-alignment techniques resulting in photonic packaging that is scalable in manufacturing volume and in the number of optical IOs per chip. In addition, using dense optical fiber connectors with space-efficient latching of fiber patch cables results in compact module size and efficient board integration, bringing the optics closer to the logic chip to alleviate bandwidth bottlenecks. This packaging direction is also well suited for embedding optics in multi-chip modules, including both photonic and microelectronic chips. We discuss the challenges and rewards in this type of configuration such as thermal management and signal integrity.

  13. Micro-manufacturing: design and manufacturing of micro-products

    National Research Council Canada - National Science Library

    Koç, Muammer; Özel, Tuğrul

    2011-01-01

    .... After addressing the fundamentals and non-metallic-based micro-manufacturing processes in the semiconductor industry, it goes on to address specific metallic-based micro-manufacturing processes...

  14. Manufacturing technologies

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1995-09-01

    The Manufacturing Technologies Center is an integral part of Sandia National Laboratories, a multiprogram engineering and science laboratory, operated for the Department of Energy (DOE) with major facilities at Albuquerque, New Mexico, and Livermore, California. Our Center is at the core of Sandia`s Advanced Manufacturing effort which spans the entire product realization process.

  15. A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Liu Yan [Jilin Province Research Center for Engineering and Technology of Spectral Analytical Instruments, Jilin University, Changchun 130023 (China); Shen Qihui; Shi Weiguang; Li Jixue; Liu Xiaoyang [State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012 (China); Yu Dongdong [1st Hopstail affiliated to Jilin University, Jilin University, Changchun 130023 (China); Zhou Jianguang [Research Center for Analytical Instrumentation, Zhejiang University, Hangzhou 310058 (China)], E-mail: liuxy@jlu.edu.cn, E-mail: jgzhou70@126.com

    2008-06-18

    One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.

  16. A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

    International Nuclear Information System (INIS)

    Liu Yan; Shen Qihui; Shi Weiguang; Li Jixue; Liu Xiaoyang; Yu Dongdong; Zhou Jianguang

    2008-01-01

    One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals

  17. National Institutes of Health–Sponsored Clinical Islet Transplantation Consortium Phase 3 Trial: Manufacture of a Complex Cellular Product at Eight Processing Facilities

    Science.gov (United States)

    Balamurugan, A.N.; Szot, Gregory L.; Kin, Tatsuya; Liu, Chengyang; Czarniecki, Christine W.; Barbaro, Barbara; Bridges, Nancy D.; Cano, Jose; Clarke, William R.; Eggerman, Thomas L.; Hunsicker, Lawrence G.; Kaufman, Dixon B.; Khan, Aisha; Lafontant, David-Erick; Linetsky, Elina; Luo, Xunrong; Markmann, James F.; Naji, Ali; Korsgren, Olle; Oberholzer, Jose; Turgeon, Nicole A.; Brandhorst, Daniel; Chen, Xiaojuan; Friberg, Andrew S.; Lei, Ji; Wang, Ling-jia; Wilhelm, Joshua J.; Willits, Jamie; Zhang, Xiaomin; Hering, Bernhard J.; Posselt, Andrew M.; Stock, Peter G.; Shapiro, A.M. James

    2016-01-01

    Eight manufacturing facilities participating in the National Institutes of Health–sponsored Clinical Islet Transplantation (CIT) Consortium jointly developed and implemented a harmonized process for the manufacture of allogeneic purified human pancreatic islet (PHPI) product evaluated in a phase 3 trial in subjects with type 1 diabetes. Manufacturing was controlled by a common master production batch record, standard operating procedures that included acceptance criteria for deceased donor organ pancreata and critical raw materials, PHPI product specifications, certificate of analysis, and test methods. The process was compliant with Current Good Manufacturing Practices and Current Good Tissue Practices. This report describes the manufacturing process for 75 PHPI clinical lots and summarizes the results, including lot release. The results demonstrate the feasibility of implementing a harmonized process at multiple facilities for the manufacture of a complex cellular product. The quality systems and regulatory and operational strategies developed by the CIT Consortium yielded product lots that met the prespecified characteristics of safety, purity, potency, and identity and were successfully transplanted into 48 subjects. No adverse events attributable to the product and no cases of primary nonfunction were observed. PMID:27465220

  18. HNF - Helmholtz Nano Facility

    Directory of Open Access Journals (Sweden)

    Wolfgang Albrecht

    2017-05-01

    Full Text Available The Helmholtz Nano Facility (HNF is a state-of-the-art cleanroom facility. The cleanroom has ~1100 m2 with cleanroom classes of DIN ISO 1-3. HNF operates according to VDI DIN 2083, Good Manufacturing Practice (GMP and aquivalent to Semiconductor Industry Association (SIA standards. HNF is a user facility of Forschungszentrum Jülich and comprises a network of facilities, processes and systems for research, production and characterization of micro- and nanostructures. HNF meets the basic supply of micro- and nanostructures for nanoelectronics, fluidics. micromechanics, biology, neutron and energy science, etc.. The task of HNF is rapid progress in nanostructures and their technology, offering efficient access to infrastructure and equipment. HNF gives access to expertise and provides resources in production, synthesis, characterization and integration of structures, devices and circuits. HNF covers the range from basic research to application oriented research facilitating a broad variety of different materials and different sample sizes.

  19. Proliferation Resistance and Safeguardability Assessment of a SFR Metal Fuel Manufacturing Facility (SFMF) using the INPRO Methodology

    Energy Technology Data Exchange (ETDEWEB)

    Chang, H. L.; Ko, W. I.; Park, S. H.; Kim, H. D.; Park, G. I. [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2015-10-15

    To illustrate the proposed Prosta process, to demonstrate its usefulness, and to provide input to a revision of the INPRO manual in the area of proliferation resistance, a case study has been carried out with a conceptually designed sodium cooled fast reactor (SFR) metal fuel manufacturing facility (SFMF), representing novel technology still in the conceptual design phase. A coarse acquisition path analysis has been carried out of the SFMF to demonstrate the assessment process with identified different target materials. The case study demonstrates the usefulness of the proposed PROSA PR assessment process and the interrelationship of the PR assessment with the safeguards-by-design process, identifying potential R and D needs. The PROSA process has been applied to a conceptually designed SFMF, representing novel technology that is still in the conceptual design phase at KAERI. The case study demonstrated that the proposed PROSA process is simpler and easier to perform than the original INPRO methodology and can be applied from the early stage of design showing the relationship of PR assessment to the safeguard-by-design process. New evaluation questionnaire for UR1 is more logical and comprehensive, and provides the legal basis enabling the IAEA to achieve its safeguards objectives including the detection of undeclared nuclear materials and activities. NES information catalogue replacing UR2 was a useful modification and supports safeguardability assessment at the NES and facility level. The proposed PROSA process is also capable to identify strengths and weaknesses of a system in the area of proliferation resistance in a generally understandable form, including R and D gaps that need to be filled in order to meet the criteria for proliferation resistance of a nuclear energy system.

  20. Gas-Solid Reaction Properties of Fluorine Compounds and Solid Adsorbents for Off-Gas Treatment from Semiconductor Facility

    Directory of Open Access Journals (Sweden)

    Shinji Yasui

    2012-01-01

    Full Text Available We have been developing a new dry-type off-gas treatment system for recycling fluorine from perfluoro compounds present in off-gases from the semiconductor industry. The feature of this system is to adsorb the fluorine compounds in the exhaust gases from the decomposition furnace by using two types of solid adsorbents: the calcium carbonate in the upper layer adsorbs HF and converts it to CaF2, and the sodium bicarbonate in the lower layer adsorbs HF and SiF4 and converts them to Na2SiF6. This paper describes the fluorine compound adsorption properties of both the solid adsorbents—calcium carbonate and the sodium compound—for the optimal design of the fixation furnace. An analysis of the gas-solid reaction rate was performed from the experimental results of the breakthrough curve by using a fixed-bed reaction model, and the reaction rate constants and adsorption capacity were obtained for achieving an optimal process design.

  1. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  2. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  3. Production of recombinant antigens and antibodies in Nicotiana benthamiana using 'magnifection' technology: GMP-compliant facilities for small- and large-scale manufacturing.

    Science.gov (United States)

    Klimyuk, Victor; Pogue, Gregory; Herz, Stefan; Butler, John; Haydon, Hugh

    2014-01-01

    This review describes the adaptation of the plant virus-based transient expression system, magnICON(®) for the at-scale manufacturing of pharmaceutical proteins. The system utilizes so-called "deconstructed" viral vectors that rely on Agrobacterium-mediated systemic delivery into the plant cells for recombinant protein production. The system is also suitable for production of hetero-oligomeric proteins like immunoglobulins. By taking advantage of well established R&D tools for optimizing the expression of protein of interest using this system, product concepts can reach the manufacturing stage in highly competitive time periods. At the manufacturing stage, the system offers many remarkable features including rapid production cycles, high product yield, virtually unlimited scale-up potential, and flexibility for different manufacturing schemes. The magnICON system has been successfully adaptated to very different logistical manufacturing formats: (1) speedy production of multiple small batches of individualized pharmaceuticals proteins (e.g. antigens comprising individualized vaccines to treat NonHodgkin's Lymphoma patients) and (2) large-scale production of other pharmaceutical proteins such as therapeutic antibodies. General descriptions of the prototype GMP-compliant manufacturing processes and facilities for the product formats that are in preclinical and clinical testing are provided.

  4. Use of the Wilkinson catalyst for the ortho-C-H heteroarylation of aromatic amines: facile access to highly extended π-conjugated heteroacenes for organic semiconductors.

    Science.gov (United States)

    Huang, Yumin; Wu, Di; Huang, Jingsheng; Guo, Qiang; Li, Juan; You, Jingsong

    2014-11-03

    An unprecedented catalytic system composed of the Wilkinson catalyst [Rh(PPh3)3Cl] and CF3COOH enabled the highly regioselective cross-coupling of aromatic amines with a variety of heteroarenes through dual C-H bond cleavage. This protocol provided a facile and rapid route from readily available substrates to (2-aminophenyl)heteroaryl compounds, which may be conveniently transformed into highly extended π-conjugated heteroacenes. The experimental studies and calculations showed that thianaphtheno[3,2-b]indoles have large HOMO-LUMO energy gaps and low-lying HOMO levels, and could therefore potentially be high-performance organic semiconductors. Herein we report the first use of a rhodium(I) catalyst for oxidative C-H/C-H coupling reactions. The current innovative catalyst system is much less expensive than [RhCp*Cl2]2/AgSbF6 and could open the door for the application of this approach to other types of C-H activation processes. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Final Rule to Reduce Toxic Air Emissions from Asphalt Processing and Asphalt Roofing Manufacturing Facilities Fact Sheet

    Science.gov (United States)

    This page contains a February 2003 fact sheet with information regarding the National Emissions Standards for Hazardous Air Pollutants (NESHAP) for Asphalt Processing and Asphalt Roofing Manufacturing.

  6. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  7. AC low-pressure plasmas generated by using annular-shaped electrodes for abatement of pollutants emitted during semiconductor manufacturing processes

    International Nuclear Information System (INIS)

    Hur, Min; Lee, Jae Ok; Song, Young Hoon

    2011-01-01

    A plasma abatement system operating at low pressures is set up with the aim of treating pollutants emitted by the semiconductor industry. The abatement device is characterized by using a tube-shaped reactor design and a bipolar alternating current, which allows an easy connection to pre-existing pipelines in the semiconductor industry and low installation cost, respectively. By using optical emission spectroscopy (OES) and Fourier transform infrared spectroscopy (FTIR), we analyzed the discharge characteristics and abatement efficiency with emphasis on the working pressure effect. In the case of CF 4 , the destruction and removal efficiency (DRE) is greatly reduced with increasing pressure. However, the pressure has a relatively small influence on the DRE for tetrakis(ethylmethylamino)zirconium (TEMAZ), which is significantly destroyed only with several hundred watts and without any liquefied byproducts. This difference is closely related to the spatial distribution of reactive species and to the chemical bond strengths of the pollutant's components. Finally, the applicability of the abatement device is discussed based on the experimental results.

  8. Environmental and workplace contamination in the semiconductor industry: implications for future health of the workforce and community.

    Science.gov (United States)

    Edelman, P

    1990-01-01

    The semiconductor industry has been an enormous worldwide growth industry. At the heart of computer and other electronic technological advances, the environment in and around these manufacturing facilities has not been scrutinized to fully detail the health effects to the workers and the community from such exposures. Hazard identification in this industry leads to the conclusion that there are many sources of potential exposure to chemicals including arsenic, solvents, photoactive polymers and other materials. As the size of the semiconductor work force expands, the potential for adverse health effects, ranging from transient irritant symptoms to reproductive effects and cancer, must be determined and control measures instituted. Risk assessments need to be effected for areas where these facilities conduct manufacturing. The predominance of women in the manufacturing areas requires evaluating the exposures to reproductive hazards and outcomes. Arsenic exposures must also be evaluated and minimized, especially for maintenance workers; evaluation for lung and skin cancers is also appropriate. PMID:2401268

  9. Bacteria inside semiconductors as potential sensor elements: biochip progress.

    Science.gov (United States)

    Sah, Vasu R; Baier, Robert E

    2014-06-24

    It was discovered at the beginning of this Century that living bacteria-and specifically the extremophile Pseudomonas syzgii-could be captured inside growing crystals of pure water-corroding semiconductors-specifically germanium-and thereby initiated pursuit of truly functional "biochip-based" biosensors. This observation was first made at the inside ultraviolet-illuminated walls of ultrapure water-flowing semiconductor fabrication facilities (fabs) and has since been, not as perfectly, replicated in simpler flow cell systems for chip manufacture, described here. Recognizing the potential importance of these adducts as optical switches, for example, or probes of metabolic events, the influences of the fabs and their components on the crystal nucleation and growth phenomena now identified are reviewed and discussed with regard to further research needs. For example, optical beams of current photonic circuits can be more easily modulated by integral embedded cells into electrical signals on semiconductors. Such research responds to a recently published Grand Challenge in ceramic science, designing and synthesizing oxide electronics, surfaces, interfaces and nanoscale structures that can be tuned by biological stimuli, to reveal phenomena not otherwise possible with conventional semiconductor electronics. This short review addresses only the fabrication facilities' features at the time of first production of these potential biochips.

  10. Pre-commissioning, commissioning, start-up and operation of a major extension to an LNG manufacturing facility in Bintulu, Sarawak

    International Nuclear Information System (INIS)

    Wong, T.

    1997-01-01

    In 1989, a decision was taken by the Shareholders of Malaysia LNG Sdn Bhd (MLNG) to expand their existing LNG manufacturing facility of some 8.0 million tonnes per annum, and to minimise the capital investment by maximizing the use of available off-plot facilities and utilities, together with the introduction of proven technological enhancements. Accordingly a new Company (MLNG Dua) was set up to own and manage this project and joint venture between existing shareholders. This paper describes the organisation, planning, and execution of the precommissioning, commissioning, start-up, and operation of the off-plot facilities, integrated utilities, and the first new process module, such that on-grade LNG rundown into MLNG's existing storage capacity was achieved within 26 days of the process module being signed off as Ready for Start-up (RFSU). (au)

  11. Persistence of organochlorine chemical residues in fish from the Tombigbee River (Alabama, USA): Continuing risk to wildlife from a former DDT manufacturing facility

    International Nuclear Information System (INIS)

    Hinck, Jo Ellen; Norstrom, Ross J.; Orazio, Carl E.; Schmitt, Christopher J.; Tillitt, Donald E.

    2009-01-01

    Organochlorine pesticide and total polychlorinated biphenyl (PCB) concentrations were measured in largemouth bass from the Tombigbee River near a former DDT manufacturing facility at McIntosh, Alabama. Evaluation of mean p,p'- and o,p'-DDT isomer concentrations and o,p'- versus p,p'-isomer proportions in McIntosh bass indicated that DDT is moving off site from the facility and into the Tombigbee River. Concentrations of p,p'-DDT isomers in McIntosh bass remained unchanged from 1974 to 2004 and were four times greater than contemporary concentrations from a national program. Total DDT in McIntosh bass exceeded dietary effect concentrations developed for bald eagle and osprey. Hexachlorobenzene, PCBs, and toxaphene concentrations in bass from McIntosh also exceeded thresholds to protect fish and piscivorous wildlife. Whereas concentrations of DDT and most other organochlorine chemicals in fish have generally declined in the U.S. since their ban, concentrations of DDT in fish from McIntosh remain elevated and represent a threat to wildlife. - DDT persists in the environment near a former manufacturing facility that ceased production over 40 years ago, and concentrations represent a risk to fish and piscivorous birds in the area

  12. Advanced Manufacturing Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Advanced Manufacturing Laboratory at the University of Maryland provides the state of the art facilities for realizing next generation products and educating the...

  13. Analysis of phthalate esters in soils near an electronics manufacturing facility and from a non-industrialized area by gas purge microsyringe extraction and gas chromatography

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Wei [MOE Key Laboratory of Environment and Health, Institute of Environmental Medicine, School of Public Health, Tongji Medical College, Huazhong University of Science and Technology, Wuhan, Hubei (China); Hu, Jia [Suzhou Center for Disease Prevention and Control, Suzhou, Jiangsu (China); Wang, Jinqi; Chen, Xuerong; Yao, Na [MOE Key Laboratory of Environment and Health, Institute of Environmental Medicine, School of Public Health, Tongji Medical College, Huazhong University of Science and Technology, Wuhan, Hubei (China); Tao, Jing, E-mail: jingtao1982@126.com [MOE Key Laboratory of Environment and Health, Institute of Environmental Medicine, School of Public Health, Tongji Medical College, Huazhong University of Science and Technology, Wuhan, Hubei (China); Zhou, Yi-Kai, E-mail: zhouyk@mails.tjmu.edu.cn [MOE Key Laboratory of Environment and Health, Institute of Environmental Medicine, School of Public Health, Tongji Medical College, Huazhong University of Science and Technology, Wuhan, Hubei (China)

    2015-03-01

    Here, a novel technique is described for the extraction and quantitative determination of six phthalate esters (PAEs) from soils by gas purge microsyringe extraction and gas chromatography. Recovery of PAEs ranged from 81.4% to 120.3%, and the relative standard deviation (n = 6) ranged from 5.3% to 10.5%. Soil samples were collected from roadsides, farmlands, residential areas, and non-cultivated areas in a non-industrialized region, and from the same land-use types within 1 km of an electronics manufacturing facility (n = 142). Total PAEs varied from 2.21 to 157.62 mg kg{sup −1} in non-industrialized areas and from 8.63 to 171.64 mg kg{sup −1} in the electronics manufacturing area. PAE concentrations in the non-industrialized area were highest in farmland, followed (in decreasing order) by roadsides, residential areas, and non-cultivated soil. In the electronics manufacturing area, PAE concentrations were highest in roadside soils, followed by residential areas, farmland, and non-cultivated soils. Concentrations of dimethyl phthalate (DMP), diethyl phthalate (DEP), and di-n-butyl phthalate (DnBP) differed significantly (P < 0.01) between the industrial and non-industrialized areas. Principal component analysis indicated that the strongest explanatory factor was related to DMP and DnBP in non-industrialized soils and to butyl benzyl phthalate (BBP) and DMP in soils near the electronics manufacturing facility. Congener-specific analysis confirmed that diethylhexyl phthalate (DEHP) was a predictive indication both in the non-industrialized area (r{sup 2} = 0.944, P < 0.01) and the industrialized area (r{sup 2} = 0.860, P < 0.01). The higher PAE contents in soils near the electronics manufacturing facility are of concern, considering the large quantities of electronic wastes generated with ongoing industrialization. - Highlights: • A new method for determining phthalate esters in soil samples was developed. • Investigate six phthalates near an industry and a

  14. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  15. Comparison of the geometric accuracy of radiotherapy facilities by various manufacturers, performed within the programme of quality audits

    International Nuclear Information System (INIS)

    Pridal, I.; Klaclova, T.; Gremlica, D.; Zackova, H.; Snobr, J.

    1998-01-01

    The evaluation of geometric parameters of radiotherapy facilities is discussed, these parameters being of importance for focusing the target volume and for achieving the required standard of treatment. During quality audits at radiotherapy systems various shortcomings were found as regards the accuracy of irradiation. A part of the shortcomings was due to inadequate setting of the facility parameters; another, however, was related to the mechanical design of the treatment units. The latter problems cannot be easily eliminated and have to be taken into account when using the respective facilities

  16. High brightness semiconductor lasers with reduced filamentation

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter.; Skovgaard, Peter M. W.

    1999-01-01

    High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture...

  17. Revenue sharing in semiconductor industry supply chain ...

    Indian Academy of Sciences (India)

    to reduce demand opportunities, inventory needs and production efficiencies, in addition to reducing .... design based on coalition structures in semiconductor supply chain. ..... supplier/contract manufacturer for a product/component category.

  18. Synthesis and characterization of metal oxide semiconductors by a facile co-electroplating-annealing method and formation of ZnO/CuO pn heterojunctions with rectifying behavior

    Science.gov (United States)

    Turkdogan, Sunay; Kilic, Bayram

    2018-01-01

    We have developed a unique growth method and demonstrated the growth of CuO and ZnO semiconductor materials and the fabrication of their pn heterojunctions in ambient atmosphere. The pn heterojunctions were constructed using inherently p-type CuO and inherently n-type ZnO materials. Both p- and n-type semiconductors and pn heterojunctions were prepared using a simple but versatile growth method that relies on the transformation of electroplated Cu and Zn metals into CuO and ZnO semiconductors, respectively and is capable of a large-scale production desired in most of the applications. The structural, chemical, optical and electrical properties of the materials and junctions were investigated using various characterization methods and the results show that our growth method, materials and devices are quite promising to be utilized for various applications including but not limited to solar cells, gas/humidity sensors and photodetectors.

  19. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  20. Neural manufacturing: a novel concept for processing modeling, monitoring, and control

    Science.gov (United States)

    Fu, Chi Y.; Petrich, Loren; Law, Benjamin

    1995-09-01

    Semiconductor fabrication lines have become extremely costly, and achieving a good return from such a high capital investment requires efficient utilization of these expensive facilities. It is highly desirable to shorten processing development time, increase fabrication yield, enhance flexibility, improve quality, and minimize downtime. We propose that these ends can be achieved by applying recent advances in the areas of artificial neural networks, fuzzy logic, machine learning, and genetic algorithms. We use the term neural manufacturing to describe such applications. This paper describes our use of artificial neural networks to improve the monitoring and control of semiconductor process.

  1. Industrial science and technology research and development project of university cooperative type in fiscal 2000. Report on achievements in semiconductor device manufacturing processes using Cat-CVD method (Semiconductor device manufacturing processes using Cat-CVD method); 2000 nendo daigaku renkeigata sangyo kagaku gijutsu kenkyu kaihatsu project. Cat-CVD ho ni yoru handotai device seizo process seika hokokusho (Cat-CVD ho ni yoru handotai device seizo process)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    The catalytic chemical vapor deposition (Cat-CVD) method is a low-temperature thin film depositing technology that can achieve improvement in quality of semiconductor thin films and can perform inexpensive film deposition in a large area. The present project is composed of the basic research and development theme and the demonstrative research and development theme for the Cat-CVD method. This report summarizes the achievements in fiscal 2000 centering on the former theme. Discussions were given on the following five areas: 1) simulation on film thickness distribution in the Cat-CVD method, 2) life extension by preventing the catalyst converting into silicide and development of a catalyst integrated shear head, 3) vapor diagnosis in the film forming process by the Cat-CVD method using silane, hydrogen and ammonia, 4) a technology for high-speed deposition of hydrogenated amorphous silicon films for solar cells using the Cat-CVD method, and the low-temperature silicon oxide nitriding technology using heated catalysts, and 5) discussions on compatibility of transparent oxide electrode materials to the process of manufacturing thin-film silicon-based solar cells by using the Cat-CVD method. (NEDO)

  2. Industrial sector-based volatile organic compound (VOC) source profiles measured in manufacturing facilities in the Pearl River Delta, China.

    Science.gov (United States)

    Zheng, Junyu; Yu, Yufan; Mo, Ziwei; Zhang, Zhou; Wang, Xinming; Yin, Shasha; Peng, Kang; Yang, Yang; Feng, Xiaoqiong; Cai, Huihua

    2013-07-01

    Industrial sector-based VOC source profiles are reported for the Pearl River Delta (PRD) region, China, based source samples (stack emissions and fugitive emissions) analyzed from sources operating under normal conditions. The industrial sectors considered are printing (letterpress, offset and gravure printing processes), wood furniture coating, shoemaking, paint manufacturing and metal surface coating. More than 250 VOC species were detected following US EPA methods TO-14 and TO-15. The results indicated that benzene and toluene were the major species associated with letterpress printing, while ethyl acetate and isopropyl alcohol were the most abundant compounds of other two printing processes. Acetone and 2-butanone were the major species observed in the shoemaking sector. The source profile patterns were found to be similar for the paint manufacturing, wood furniture coating, and metal surface coating sectors, with aromatics being the most abundant group and oxygenated VOCs (OVOCs) as the second largest contributor in the profiles. While OVOCs were one of the most significant VOC groups detected in these five industrial sectors in the PRD region, they have not been reported in most other source profile studies. Such comparisons with other studies show that there are differences in source profiles for different regions or countries, indicating the importance of developing local source profiles. Crown Copyright © 2013. Published by Elsevier B.V. All rights reserved.

  3. An Facile High-Density Polyethylene - Exfoliated Graphite - Aluminium Hydroxide Composite: Manufacture, Morphology, Structure, Antistatic and Fireproof Properties

    Directory of Open Access Journals (Sweden)

    Jihui LI

    2014-09-01

    Full Text Available Graphite intercalation compounds (GIC and exfoliated graphite (EG as raw materials were prepared with flake graphite, concentrated sulphuric acid (H2SO4, potassium bichromate (K2Cr2O7 and peracetic acid (CH3CO3H and characterized. Then, high-density polyethylene-exfoliated graphite (HDPE-EG composites were fabricated with HDPE and EG via in situ synthesis technique in the different mass ratio, and their resistivity values (ohms/sq were measured. Based on the resistivity values, it was discovered that HDPE-EG composite with the antistatic property could be fabricated while the mass ratio was 5.00 : 0.30. Last, HDPE-EG-aluminium hydroxide (HDPE-EG-Al(OH3 composites were manufactured with HDPE, GIC and Al(OH3 via the in situ synthesis-thermal expansion technique, and their resistivity values and limiting oxygen index (LOI values were measured. Based on the resistivity values and LOI values, it was discovered that HDPE-EG-Al(OH3 composite with the antistatic and fireproof property could be manufactured while HDPE, GICs and Al(OH3 of mass ratio was 5.00 : 0.30 : 1.00. Otherwise, the petal-like morphology and structure of HDPE-EG-Al(OH3 composite were characterized, which consisted of EG, HDPE and Al(OH3. DOI: http://dx.doi.org/10.5755/j01.ms.20.3.4275

  4. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  5. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  6. Preparation and analysis of amorphous carbon films deposited from (C{sub 6}H{sub 12})/Ar/He chemistry for application as the dry etch hard mask in the semiconductor manufacturing process

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seungmoo [Department of Materials Science and Engineering, Korea University, Seoul, 136-701 (Korea, Republic of); TC Technology Team, Samsung Electronics Co. Ltd., Gyeounggi-Do, 446-711 (Korea, Republic of); Won, Jaihyung; Choi, Jongsik [TC Technology Team, Samsung Electronics Co. Ltd., Gyeounggi-Do, 446-711 (Korea, Republic of); Jang, Samseok [Department of Materials Science and Engineering, Korea University, Seoul, 136-701 (Korea, Republic of); Jee, Yeonhong; Lee, Hyeondeok [TC Technology Team, Samsung Electronics Co. Ltd., Gyeounggi-Do, 446-711 (Korea, Republic of); Byun, Dongjin, E-mail: dbyun@korea.ac.kr [Department of Materials Science and Engineering, Korea University, Seoul, 136-701 (Korea, Republic of)

    2011-08-01

    Amorphous carbon layers (ACL) were deposited on Si (100) wafers by plasma enhanced chemical vapor deposition (PECVD) by using 1-hexene (C{sub 6}H{sub 12}) as a carbon source for dry etch hard mask of semiconductor devices manufacturing process. The deposition characteristics and film properties were investigated by means of ellipsometry, Raman spectroscopy, X-ray photo electron spectroscopy (XPS) and stress analysis. Hardness, Young's modulus, and surface roughness of ACL deposited at 550 deg. C were investigated by using nano-indentation and AFM. The deposition rate was decreased from 5050 A/min to 2160 A/min, and dry etch rate was decreased from 2090 A/min to 1770 A/min, and extinction coefficient was increased from 0.1 to 0.5. Raman analysis revealed a higher shift of the G-peak and a lower shift of the D-peak and the increase of I(D)/I(G) ratio as the deposition temperature was increased from 350 deg. C to 550 deg. C. XPS results of ACL deposited at 550 deg. C revealed a carbon 1s binding energy of 284.4 eV. The compressive film stress was decreased from 2.95 GPa to 1.28 GPa with increasing deposition temperature. The hardness and Young's modulus of ACL deposited at 550 deg. C were 5.8 GPa and 48.7 GPa respectively. The surface roughness RMS of ACL deposited at 550 deg. C was 2.24 A, and that after cleaning in diluted HF solution (H{sub 2}O:HF = 200:1), SC1 (NH{sub 4}OH:H{sub 2}O{sub 2}:H{sub 2}O = 1:4:20) solution, and sulfuric acid solution (H{sub 2}SO{sub 4}:H{sub 2}O{sub 2} = 6:1) was 2.28 A, 2.30 A and 7.34 A, respectively. The removal amount of ACL deposited at 550 deg. C in diluted HF solution, SC1 solution and sulfuric acid solution was 6 A, 36 A and 110 A, respectively. These results demonstrated the viability of ACL deposited by PECVD from C{sub 6}H{sub 12} at 550 deg. C for application as the dry etch hard mask in fabrication of semiconductor devices.

  7. Particle size distributions of lead measured in battery manufacturing and secondary smelter facilities and implications in setting workplace lead exposure limits.

    Science.gov (United States)

    Petito Boyce, Catherine; Sax, Sonja N; Cohen, Joel M

    2017-08-01

    Inhalation plays an important role in exposures to lead in airborne particulate matter in occupational settings, and particle size determines where and how much of airborne lead is deposited in the respiratory tract and how much is subsequently absorbed into the body. Although some occupational airborne lead particle size data have been published, limited information is available reflecting current workplace conditions in the U.S. To address this data gap, the Battery Council International (BCI) conducted workplace monitoring studies at nine lead acid battery manufacturing facilities (BMFs) and five secondary smelter facilities (SSFs) across the U.S. This article presents the results of the BCI studies focusing on the particle size distributions calculated from Personal Marple Impactor sampling data and particle deposition estimates in each of the three major respiratory tract regions derived using the Multiple-Path Particle Dosimetry model. The BCI data showed the presence of predominantly larger-sized particles in the work environments evaluated, with average mass median aerodynamic diameters (MMADs) ranging from 21-32 µm for the three BMF job categories and from 15-25 µm for the five SSF job categories tested. The BCI data also indicated that the percentage of lead mass measured at the sampled facilities in the submicron range (i.e., lead) was generally small. The estimated average percentages of lead mass in the submicron range for the tested job categories ranged from 0.8-3.3% at the BMFs and from 0.44-6.1% at the SSFs. Variability was observed in the particle size distributions across job categories and facilities, and sensitivity analyses were conducted to explore this variability. The BCI results were compared with results reported in the scientific literature. Screening-level analyses were also conducted to explore the overall degree of lead absorption potentially associated with the observed particle size distributions and to identify key issues

  8. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  9. Semiconductor research capabilities at the Lawrence Berkeley Laboratory

    International Nuclear Information System (INIS)

    1987-02-01

    This document discusses semiconductor research capabilities (advanced materials, processing, packaging) and national user facilities (electron microscopy, heavy-ion accelerators, advanced light source)

  10. An evaluation of the Manufacturer And User Facility Device Experience database that inspired the United States Food and Drug Administration's Reclassification of transvaginal mesh

    Directory of Open Access Journals (Sweden)

    Jason M. Sandberg

    2018-03-01

    Full Text Available Purpose: To assess the utility of the Manufacturer And User Facility Device Experience (MAUDE database in objectively capturing adverse events for transvaginal mesh in the United States. Materials and Methods: We reviewed 1,103 individual medical device reports submitted to the MAUDE database that inspired the United States (US Food and Drug Administration's 2008 Public Health Notification. Entries were compiled into a categorical database that reported manufacturer, brand, reporter type, report source, and type of adverse event. Results: There were numerous examples of missing, duplicated, and non-standardized entries. Analysis revealed 64 reports with duplicated information, and six reports representing multiple patients. Forty-seven percent of medical device reports did not identify a reporter source. At least 28% of reported devices are no longer on the US market. There was wide variability in the quality and completeness of submitted reports and true adverse event rates could not be accurately calculated because the number of total cases was unknown. Conclusions: The MAUDE database was limited in its ability to collect, quantify, and standardize real-life adverse events related to transvaginal mesh. While it functions to collect information related to isolated adverse events, systematic limitations of the MAUDE database, that no doubt extend to other medical devices, necessitate the development of new reporting systems. Alternatives are under development, which may allow regulators to more accurately scrutinize the safety profiles of specific medical devices.

  11. An evaluation of the Manufacturer And User Facility Device Experience database that inspired the United States Food and Drug Administration's Reclassification of transvaginal mesh.

    Science.gov (United States)

    Sandberg, Jason M; Gray, Ian; Pearlman, Amy; Terlecki, Ryan P

    2018-03-01

    To assess the utility of the Manufacturer And User Facility Device Experience (MAUDE) database in objectively capturing adverse events for transvaginal mesh in the United States. We reviewed 1,103 individual medical device reports submitted to the MAUDE database that inspired the United States (US) Food and Drug Administration's 2008 Public Health Notification. Entries were compiled into a categorical database that reported manufacturer, brand, reporter type, report source, and type of adverse event. There were numerous examples of missing, duplicated, and non-standardized entries. Analysis revealed 64 reports with duplicated information, and six reports representing multiple patients. Forty-seven percent of medical device reports did not identify a reporter source. At least 28% of reported devices are no longer on the US market. There was wide variability in the quality and completeness of submitted reports and true adverse event rates could not be accurately calculated because the number of total cases was unknown. The MAUDE database was limited in its ability to collect, quantify, and standardize real-life adverse events related to transvaginal mesh. While it functions to collect information related to isolated adverse events, systematic limitations of the MAUDE database, that no doubt extend to other medical devices, necessitate the development of new reporting systems. Alternatives are under development, which may allow regulators to more accurately scrutinize the safety profiles of specific medical devices.

  12. Persistence of organochlorine chemical residues in fish from the Tombigbee River (Alabama, USA): Continuing risk to wildlife from a former DDT manufacturing facility

    Science.gov (United States)

    Hinck, J.E.; Norstrom, R.J.; Orazio, C.E.; Schmitt, C.J.; Tillitt, D.E.

    2009-01-01

    Organochlorine pesticide and total polychlorinated biphenyl (PCB) concentrations were measured in largemouth bass from the Tombigbee River near a former DDT manufacturing facility at McIntosh, Alabama. Evaluation of mean p,p???- and o,p???-DDT isomer concentrations and o,p???- versus p,p???-isomer proportions in McIntosh bass indicated that DDT is moving off site from the facility and into the Tombigbee River. Concentrations of p,p???-DDT isomers in McIntosh bass remained unchanged from 1974 to 2004 and were four times greater than contemporary concentrations from a national program. Total DDT in McIntosh bass exceeded dietary effect concentrations developed for bald eagle and osprey. Hexachlorobenzene, PCBs, and toxaphene concentrations in bass from McIntosh also exceeded thresholds to protect fish and piscivorous wildlife. Whereas concentrations of DDT and most other organochlorine chemicals in fish have generally declined in the U.S. since their ban, concentrations of DDT in fish from McIntosh remain elevated and represent a threat to wildlife.

  13. An evaluation of the effectiveness of the EPA comply code to demonstrate compliance with radionuclide emission standards at three manufacturing facilities

    International Nuclear Information System (INIS)

    Smith, L.R.; Laferriere, J.R.; Nagy, J.W.

    1991-01-01

    Measurements of airborne radionuclide emissions and associated environmental concentrations were made at, and in the vicinity of, two urban and one suburban facility where radiolabeled chemicals for biomedical research and radiopharmaceuticals are manufactured. Emission, environmental and meteorological measurements were used in the EPA COMPLY code and in environmental assessment models developed specifically for these sites to compare their ability to predict off-site measurements. The models and code were then used to determine potential dose to hypothetical maximally exposed receptors and the ability of these methods to demonstrate whether these facilities comply with proposed radionuclide emission standards assessed. In no case did the models and code seriously underestimate off-site impacts. However, for certain radionuclides and chemical forms, the EPA COMPLY code was found to overestimate off-site impacts by such a large factor as to render its value questionable for determining regulatory compliance. Recommendations are offered for changing the code to enable it to be more serviceable to radionuclide users and regulators

  14. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  15. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  16. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  17. Physical characteristics and solubility of long-lived airborne particulates in uranium producing and manufacturing facilities. Phase III - Part II

    International Nuclear Information System (INIS)

    Robertson, R.; Stuart, D.C.; Stothers, M.A.

    1995-08-01

    The rates of dissolution in simulated lung fluid of uranium from aerosols associated with various stages of the yellowcake manufacturing process have been studied. Dusts were collected from eight workplace locations. Each dust sample was resuspended in the laboratory and collected on glass fibre substrates using cascade impactor sampling methods. The two particle size fractions collected were less than 7 microns and 10-7 microns. Each sample was prepared in duplicate. In all, 32 aerosol samples were prepared for solubility extraction studies. The aerosol-bearing filters were subjected to parallel extractions by simulated lung fluid under continuous flow, at 37 deg C at pH 7.4, over a period of 68.5 days. Ten lung fluid fractions were collected at predetermined time intervals and analyzed to allow estimates of uranium dissolution rates as a function of time. After completion of the 68.5 day simulated lung fluid extraction, the residual samples were subjected to a more aggressive nitric acid extraction for 48 hours. The fraction of uranium dissolved over the first 12 hours varied from 27% to 98% for seven of the eight yellowcake samples. For these yellowcake samples, the fractions of uranium dissolved over the first 36 hours and over the full 68.5 days ranged from 49% to 99% and 80% to 100% respectively. The eighth sample was a calcined yellowcake. The rate of dissolution for the calcined yellowcake was less than 4.5% over the first 12 hours and less than 10% over 68.5 days. No influence of particle size on the rate of dissolution was found. Most of the uranium was dissolved by the simulated lung fluid for seven of the eight yellowcake samples. As a result, the nitric acid extraction of the residual samples had little effect on these seven samples. The nitric acid extraction of the calcined sample, which was found to be relatively insoluble in simulated lung fluid, dissolved a further 21% to 36.1% of the uranium. (author). 9 refs., 6 tabs., 1 fig

  18. Reductive dechlorination of organochlorine pesticides in soils from an abandoned manufacturing facility by zero-valent iron

    International Nuclear Information System (INIS)

    Cong, Xin; Xue, Nandong; Wang, Shijie; Li, Keji; Li, Fasheng

    2010-01-01

    Several experiments and a model were constructed using conventional granular zero-valent iron (ZVI) particles as the reducing agent to study the reductive dechlorination characteristics of hexachlorocyclohexanes (HCHs) and dichlorodiphenyltrichloroethane (DDTs) in soils from a former pesticide-manufacturing site. The results showed that ZVI had good ability for the reductive dechlorination for both HCHs and DDTs. The reductive dechlorination of HCHs and DDTs proceeded at different rates. The pseudo first-order constants of HCHs were greater than those of DDTs. The reductive dechlorination rates in a descending order were γ-HCH > δ-HCH > β-HCH > α-HCH > o,p'-DDT > p,p'-DDT > p,p'-DDE. To discuss the major influential factors over the reductive dechlorination rates of HCHs and DDTs by ZVI, 22 quantum chemical descriptors were computed with the density functional theory at B3LYP/6-31G * level, which characterizes different molecular structures and physicochemical properties of HCHs and DDTs. A polyparameter linear free energy relationship (LFER) model was established, which correlates the reductive dechlorination properties of pollutants with their structural descriptors. Using the partial least squares (PLS) analysis, an optimal two-parameter LFER model was established. q + and q Cl - were more important factors in determining the dechlorination rate of OCPs in the chemical reductive reaction. This optimal model was stable and had good predictability. The model study also showed that the coefficient value of q + was 0.511, which positively correlated with the reductive dechlorination rate constant, whereas q Cl - was negatively correlated with it. The reductive dechlorination rate of pollutants appears to be limited mainly by the rate of dissolution in the aqueous phase. This model can be used to explain the degradation potential of organochlorine pesticides (OCPs) and the trend of residues changing during the soil remediation. Therefore, the study is of

  19. Where the chips fall: environmental health in the semiconductor industry.

    Science.gov (United States)

    Chepesiuk, R

    1999-09-01

    Three recent lawsuits are focusing public attention on the environmental and occupational health effects of the world's largest and fastest growing manufacturing sector-the $150 billion semiconductor industry. The suits allege that exposure to toxic chemicals in semiconductor manufacturing plants led to adverse health effects such as miscarriage and cancer among workers. To manufacture computer components, the semiconductor industry uses large amounts of hazardous chemicals including hydrochloric acid, toxic metals and gases, and volatile solvents. Little is known about the long-term health consequences of exposure to chemicals by semiconductor workers. According to industry critics, the semiconductor industry also adversely impacts the environment, causing groundwater and air pollution and generating toxic waste as a by-product of the semiconductor manufacturing process. In contrast, the U.S. Bureau of Statistics shows the semiconductor industry as having a worker illness rate of about one-third of the average of all manufacturers, and advocates defend the industry, pointing to recent research collaborations and product replacement as proof that semiconductor manufacturers adequately protect both their employees and the environment.

  20. Water soluble nano-scale transient material germanium oxide for zero toxic waste based environmentally benign nano-manufacturing

    KAUST Repository

    Almuslem, A. S.; Hanna, Amir; Yapici, Tahir; Wehbe, N.; Diallo, Elhadj; Kutbee, Arwa T.; Bahabry, Rabab R.; Hussain, Muhammad Mustafa

    2017-01-01

    , in addition to transiency, we also show an environmentally friendly manufacturing process for a complementary metal oxide semiconductor (CMOS) technology. Every year, trillions of complementary metal oxide semiconductor (CMOS) electronics are manufactured

  1. Incorporating DSA in multipatterning semiconductor manufacturing technologies

    Science.gov (United States)

    Badr, Yasmine; Torres, J. A.; Ma, Yuansheng; Mitra, Joydeep; Gupta, Puneet

    2015-03-01

    Multi-patterning (MP) is the process of record for many sub-10nm process technologies. The drive to higher densities has required the use of double and triple patterning for several layers; but this increases the cost of the new processes especially for low volume products in which the mask set is a large percentage of the total cost. For that reason there has been a strong incentive to develop technologies like Directed Self Assembly (DSA), EUV or E-beam direct write to reduce the total number of masks needed in a new technology node. Because of the nature of the technology, DSA cylinder graphoepitaxy only allows single-size holes in a single patterning approach. However, by integrating DSA and MP into a hybrid DSA-MP process, it is possible to come up with decomposition approaches that increase the design flexibility, allowing different size holes or bar structures by independently changing the process for every patterning step. A simple approach to integrate multi-patterning with DSA is to perform DSA grouping and MP decomposition in sequence whether it is: grouping-then-decomposition or decomposition-then-grouping; and each of the two sequences has its pros and cons. However, this paper describes why these intuitive approaches do not produce results of acceptable quality from the point of view of design compliance and we highlight the need for custom DSA-aware MP algorithms.

  2. Radiation processing of polymers and semiconductors at the Institute of Nuclear Chemistry and Technology

    International Nuclear Information System (INIS)

    Zimek, Z.; Przybytniak, G.; Kaluska, I.

    2006-01-01

    R(and)D studies in the field of radiation technology in Poland are mostly concentrated at the Institute of Nuclear Chemistry and Technology (INCT). The results of the INCT works on polymer and semiconductor modification have been implemented in various branches of national economy, particularly in industry and medicine. Radiation technology for polymer modification was implemented in the middle of the 1970-ties. Among others, the processes of irradiation and heat shrinkable products expansion have been developed. The transfer of this technology to Polish industry was performed in the middle of the 1980-ties. The present study aims at the formulation of new PE composites better suited to new generation of heat shrinkable products, for example, a new generation of hot-melt adhesives has been developed to meet specific requirements of customers. Modified polypropylene was used for the production of medical devices sterilized by radiation, especially disposable syringes, to overcome the low radiation resistance of the basic material. Modified polypropylene (PP-M) has been formulated at the INCT to provide material suitable for medical application and radiation sterilization process. Modification of semiconductor devices by EB was applied on an industrial scale since 1978 when the INCT and the LAMINA semiconductor factory successfully adopted that technology to improve specific semiconductor devices. This activity is continued on commercial basis where the INCT facilities served to contract irradiation of certain semiconductor devices according to the manufacturing program of the Polish factory and customers from abroad. (author)

  3. Bacteria Inside Semiconductors as Potential Sensor Elements: Biochip Progress

    Directory of Open Access Journals (Sweden)

    Vasu R. Sah

    2014-06-01

    Full Text Available It was discovered at the beginning of this Century that living bacteria—and specifically the extremophile Pseudomonas syzgii—could be captured inside growing crystals of pure water-corroding semiconductors—specifically germanium—and thereby initiated pursuit of truly functional “biochip-based” biosensors. This observation was first made at the inside ultraviolet-illuminated walls of ultrapure water-flowing semiconductor fabrication facilities (fabs and has since been, not as perfectly, replicated in simpler flow cell systems for chip manufacture, described here. Recognizing the potential importance of these adducts as optical switches, for example, or probes of metabolic events, the influences of the fabs and their components on the crystal nucleation and growth phenomena now identified are reviewed and discussed with regard to further research needs. For example, optical beams of current photonic circuits can be more easily modulated by integral embedded cells into electrical signals on semiconductors. Such research responds to a recently published Grand Challenge in ceramic science, designing and synthesizing oxide electronics, surfaces, interfaces and nanoscale structures that can be tuned by biological stimuli, to reveal phenomena not otherwise possible with conventional semiconductor electronics. This short review addresses only the fabrication facilities’ features at the time of first production of these potential biochips.

  4. A Nonlinear Growth Analysis of Integrated Device Manufacturers’ Evolution to the Nanotechnology Manufacturing Outsourcing

    Directory of Open Access Journals (Sweden)

    Hung-Chi Hsiao

    2012-04-01

    Full Text Available With the increasing cost of setting up a semiconductor fabrication facility, coupled with significant costs of developing a leading nanotechnology process, aggressive outsourcing (asset-light business models via working more closely with foundry companies is how semiconductor manufacturing firms are looking to strengthen their sustainable competitive advantages. This study aims to construct a market intelligence framework for developing a wafer demand forecasting model based on long-term trend detection to facilitate decision makers in capacity planning. The proposed framework modifies market variables by employing inventory factors and uses a top-down forecasting approach with nonlinear least square method to estimate the forecast parameters. The nonlinear mathematical approaches could not only be used to examine forecasting performance, but also to anticipate future growth of the semiconductor industry. The results demonstrated the practical viability of this long-term demand forecast framework.

  5. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  6. Green Manufacturing Fundamentals and Applications

    CERN Document Server

    2013-01-01

    Green Manufacturing: Fundamentals and Applications introduces the basic definitions and issues surrounding green manufacturing at the process, machine and system (including supply chain) levels. It also shows, by way of several examples from different industry sectors, the potential for substantial improvement and the paths to achieve the improvement. Additionally, this book discusses regulatory and government motivations for green manufacturing and outlines the path for making manufacturing more green as well as making production more sustainable. This book also: • Discusses new engineering approaches for manufacturing and provides a path from traditional manufacturing to green manufacturing • Addresses regulatory and economic issues surrounding green manufacturing • Details new supply chains that need to be in place before going green • Includes state-of-the-art case studies in the areas of automotive, semiconductor and medical areas as well as in the supply chain and packaging areas Green Manufactu...

  7. The impact of two fluoropolymer manufacturing facilities on downstream contamination of a river and drinking water resources with per- and polyfluoroalkyl substances.

    Science.gov (United States)

    Bach, Cristina; Dauchy, Xavier; Boiteux, Virginie; Colin, Adeline; Hemard, Jessica; Sagres, Véronique; Rosin, Christophe; Munoz, Jean-François

    2017-02-01

    Perfluoroalkyl and polyfluoroalkyl substances (PFASs) are emerging contaminants that have been detected in the environment, biota, and humans. Drinking water is a route of exposure for populations consuming water contaminated by PFAS discharges. This research study reports environmental measurement concentrations, mass flows, and the fate of dozens of PFASs in a river receiving effluents from two fluoropolymer manufacturing facilities. In addition to quantified levels of PFASs using LC- and GC-MS analytical methods, the total amount of unidentified PFASs and precursors was assessed using two complementary analytical methods, absorbable organic fluorine (AOF) determination and oxidative conversion of perfluoroalkyl carboxylic acid (PFCA) precursors. Several dozen samples were collected in the river (water and sediment) during four sampling campaigns. In addition, samples were collected in two well fields and from the outlet of the drinking water treatment plants after chlorination. We estimated that 4295 kg PFHxA, 1487 kg 6:2FTSA, 965 kg PFNA, 307 kg PFUnDA, and 14 kg PFOA were discharged in the river by the two facilities in 2013. High concentrations (up to 176 ng/g dw) of odd long-chain PFASs (PFUnDA and PFTrDA) were found in sediment samples. PFASs were detected in all 15 wells, with concentrations varying based on the location of the well in the field. Additionally, the presence of previously discharged PFASs was still measurable. Significant discrepancies between PFAS concentration profiles in the wells and in the river suggest an accumulation and transformation of PFCA precursors in the aquifer. Chlorination had no removal efficiency and no unidentified PFASs were detected in the treated water with either complementary analytical method. Although the total PFAS concentrations were high in the treated water, ranging from 86 to 169 ng/L, they did not exceed the currently available guideline values.

  8. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  9. Evolutionary fuzzy ARTMAP neural networks for classification of semiconductor defects.

    Science.gov (United States)

    Tan, Shing Chiang; Watada, Junzo; Ibrahim, Zuwairie; Khalid, Marzuki

    2015-05-01

    Wafer defect detection using an intelligent system is an approach of quality improvement in semiconductor manufacturing that aims to enhance its process stability, increase production capacity, and improve yields. Occasionally, only few records that indicate defective units are available and they are classified as a minority group in a large database. Such a situation leads to an imbalanced data set problem, wherein it engenders a great challenge to deal with by applying machine-learning techniques for obtaining effective solution. In addition, the database may comprise overlapping samples of different classes. This paper introduces two models of evolutionary fuzzy ARTMAP (FAM) neural networks to deal with the imbalanced data set problems in a semiconductor manufacturing operations. In particular, both the FAM models and hybrid genetic algorithms are integrated in the proposed evolutionary artificial neural networks (EANNs) to classify an imbalanced data set. In addition, one of the proposed EANNs incorporates a facility to learn overlapping samples of different classes from the imbalanced data environment. The classification results of the proposed evolutionary FAM neural networks are presented, compared, and analyzed using several classification metrics. The outcomes positively indicate the effectiveness of the proposed networks in handling classification problems with imbalanced data sets.

  10. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  11. Solving a mathematical model integrating unequal-area facilities layout and part scheduling in a cellular manufacturing system by a genetic algorithm.

    Science.gov (United States)

    Ebrahimi, Ahmad; Kia, Reza; Komijan, Alireza Rashidi

    2016-01-01

    In this article, a novel integrated mixed-integer nonlinear programming model is presented for designing a cellular manufacturing system (CMS) considering machine layout and part scheduling problems simultaneously as interrelated decisions. The integrated CMS model is formulated to incorporate several design features including part due date, material handling time, operation sequence, processing time, an intra-cell layout of unequal-area facilities, and part scheduling. The objective function is to minimize makespan, tardiness penalties, and material handling costs of inter-cell and intra-cell movements. Two numerical examples are solved by the Lingo software to illustrate the results obtained by the incorporated features. In order to assess the effects and importance of integration of machine layout and part scheduling in designing a CMS, two approaches, sequentially and concurrent are investigated and the improvement resulted from a concurrent approach is revealed. Also, due to the NP-hardness of the integrated model, an efficient genetic algorithm is designed. As a consequence, computational results of this study indicate that the best solutions found by GA are better than the solutions found by B&B in much less time for both sequential and concurrent approaches. Moreover, the comparisons between the objective function values (OFVs) obtained by sequential and concurrent approaches demonstrate that the OFV improvement is averagely around 17 % by GA and 14 % by B&B.

  12. Exposure to static magnetic fields and risk of accidents among a cohort of workers from a medical imaging device manufacturing facility.

    Science.gov (United States)

    Bongers, Suzan; Slottje, Pauline; Portengen, Lützen; Kromhout, Hans

    2016-05-01

    To study the association between occupational MRI-related static magnetic fields (SMF) exposure and the occurrence of accidents. Recent and career SMF exposure was assessed by linking a retrospective job exposure matrix to payroll based job histories, for a cohort of (former) workers of an imaging device manufacturing facility in the Netherlands. Occurrence of accidents was collected through an online questionnaire. Self-reported injuries due to accidents in the past 12 months, and the first (near) traffic accident while commuting to work and from work were analyzed with logistic regression and discrete-time survival analyses, respectively. High recent SMF exposure was associated with an increased risk of accidents leading to injuries [odds ratio (OR) 4.16]. For high recent and career SMF exposure, an increased risk was observed for accidents resulting in physician-treated injuries (OR 5.78 and 2.79, respectively) and an increased lifetime risk of (near) accidents during commute to work (hazard ratios 2.49 and 2.45, respectively), but not from work. We found an association between MRI-related occupational SMF exposure and an increased risk of accidents leading to injury, and for commute-related (near) accidents during the commute from home to work. Further research into health effects of (long-term) SMF exposure is warranted to corroborate our findings. © 2015 Wiley Periodicals, Inc.

  13. Unified Controller Design for Intelligent Manufacturing Automation

    National Research Council Canada - National Science Library

    Kosut, Robert

    1997-01-01

    .... The demonstration system selected was rapid thermal processing (RTP) of semiconductor wafers. This novel approach in integrated circuit manufacturing demands fast tracking control laws that achieve near uniform spatial temperature distributions...

  14. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  15. REDUCTION OF ARSENIC WASTES IN THE SEMICONDUCTOR INDUSTRY

    Science.gov (United States)

    The research described in this report was aimed at initiating and developing processes and process modifications that could be incorporated into semiconductor manufacturing operations to accomplish pollution prevention, especially to accomplish significant reduction in the quanti...

  16. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  17. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  18. 75 FR 24742 - In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products...

    Science.gov (United States)

    2010-05-05

    ... Semiconductor, Xiqing Integrated Semiconductor, Manufacturing Site, No. 15 Xinghua Road, Xiqing Economic... Malaysia Sdn. Bhd., NO. 2 Jalan SS 8/2, Free Industrial Zone, Sungai Way, 47300 Petaling Jaya, Selengor, Malaysia. Freescale Semiconductor Pte. Ltd., 7 Changi South Street 2, 03-00, Singapore 486415. Freescale...

  19. Semiconductor materials for solar photovoltaic cells

    CERN Document Server

    Wong-Ng, Winnie; Bhattacharya, Raghu

    2016-01-01

    This book reviews the current status of semiconductor materials for conversion of sunlight to electricity, and highlights advances in both basic science and manufacturing.  Photovoltaic (PV) solar electric technology will be a significant contributor to world energy supplies when reliable, efficient PV power products are manufactured in large volumes at low cost.  Expert chapters cover the full range of semiconductor materials for solar-to-electricity conversion, from crystalline silicon and amorphous silicon to cadmium telluride, copper indium gallium sulfide selenides, dye sensitized solar cells, organic solar cells, and environmentally friendly copper zinc tin sulfide selenides. The latest methods for synthesis and characterization of solar cell materials are described, together with techniques for measuring solar cell efficiency. Semiconductor Materials for Solar Photovoltaic Cells presents the current state of the art as well as key details about future strategies to increase the efficiency and reduce ...

  20. Life-cycle assessment of semiconductors

    CERN Document Server

    Boyd, Sarah B

    2012-01-01

    Life-Cycle Assessment of Semiconductors presents the first and thus far only available transparent and complete life cycle assessment of semiconductor devices. A lack of reliable semiconductor LCA data has been a major challenge to evaluation of the potential environmental benefits of information technologies (IT). The analysis and results presented in this book will allow a higher degree of confidence and certainty in decisions concerning the use of IT in efforts to reduce climate change and other environmental effects. Coverage includes but is not limited to semiconductor manufacturing trends by product type and geography, unique coverage of life-cycle assessment, with a focus on uncertainty and sensitivity analysis of energy and global warming missions for CMOS logic devices, life cycle assessment of flash memory and life cycle assessment of DRAM. The information and conclusions discussed here will be highly relevant and useful to individuals and institutions. The book also: Provides a detailed, complete a...

  1. Semiconductors detectors: basics principals, fabrication and repair

    International Nuclear Information System (INIS)

    Souza Coelho, L.F. de.

    1982-05-01

    The fabrication and repairing techniques of semiconductor detectors, are described. These methods are shown in the way they are applied by the semiconductor detector laboratory of the KFA-Julich, where they have been developed during the last 15 years. The history of the semiconductor detectors is presented here, being also described the detector fabrication experiences inside Brazil. The key problems of manufacturing are raised. In order to understand the fabrication and repairing techniques the working principles of these detectors, are described. The cases in which worked during the stay in the KFA-Julich, particularly the fabrication of a plane Ge (Li) detector, with side entry, and the repair of a coaxial Ge (Li) is described. The vanguard problems being researched in Julich are also described. Finally it is discussed a timetable for the semiconductor detector laboratory of the UFRJ, which laboratory is in the mounting stage now. (Author) [pt

  2. Analysis and simulation of semiconductor devices

    CERN Document Server

    Selberherr, Siegfried

    1984-01-01

    The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the s...

  3. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  4. Manufacturing Initiative

    Data.gov (United States)

    National Aeronautics and Space Administration — The Advanced Manufacturing Technologies (AMT) Project supports multiple activities within the Administration's National Manufacturing Initiative. A key component of...

  5. Use of radioactive tracers in the semiconductor industry

    International Nuclear Information System (INIS)

    Akerman, Karol

    1975-01-01

    Manufacture of the semiconductor materials comprises production and purification of the raw materials (GeC14 or SiHC13), purification of the elemental semiconductors by metallurgical methods (including zone melting), production and doping of single crystals, dividing the crystals into slices of suitable size, formation of p-n junctions and fabrication of the finished semiconductor devices. In the sequence of operations, the behavior of very small quantities of an element must be monitored, and radioactive tracers are often used to solve these problems. Examples are given of the use of radioactive tracers in the semiconductor industry

  6. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  7. 3D Ceramic Microfluidic Device Manufacturing

    International Nuclear Information System (INIS)

    Natarajan, Govindarajan; Humenik, James N

    2006-01-01

    Today, semiconductor processing serves as the backbone for the bulk of micromachined devices. Precision lithography and etching technology used in the semiconductor industry are also leveraged by alternate techniques like electroforming and molding. The nature of such processing is complex, limited and expensive for any manufacturing foundry. This paper details the technology elements developed to manufacture cost effective and versatile microfluidic devices for applications ranging from medical diagnostics to characterization of bioassays. Two applications using multilayer ceramic technology to manufacture complex 3D microfluidic devices are discussed

  8. Electron beam writing on semiconductors

    International Nuclear Information System (INIS)

    Bierhenke, H.; Kutzer, E.; Pascher, A.; Plitzner, H.; Rummel, P.; Siemens A.G., Muenchen; Siemens A.G., Muenchen

    1979-08-01

    Reported are the results of the 3 1/2 year research project 'Electron beam Writing on Semiconductors'. Work has been done in the field of direct wafer exposure techniques, and of mask making. Described are resist technology, setting up of a research device, exploration of alignment procedures, manufacturing of devices and their radiation influence. Furthermore, investigations and measurements of an electron beam machine bought for mask making purposes, the development of LSI-circuits with this machine, the software necessary and important developments of digital subsystems are reported. (orig.) [de

  9. National Emission Standards for Aerospace Manufacturing and Rework Facilities: Summary of Requirements for Implementing the National Emission Standards for Hazardous Air Pollutants (NESHAP)

    Science.gov (United States)

    This summary of implementation requirements document for the Aerospace Manufacturing and Rework facilties NESHAP was originally prepared in August 1997, but it was updated in January 2001 with a new amendments update.

  10. Social manufacturing

    OpenAIRE

    Hamalainen, Markko; Karjalainen, Jesse

    2017-01-01

    New business models harnessing the power of individuals have already revolutionized service industries and digital content production. In this study, we investigate whether a similar phenomenon is taking place in manufacturing industries. We start by conceptually defining two distinct forms of firm-individual collaboration in manufacturing industries: (1) social cloud manufacturing, in which firms outsource manufacturing to individuals, and (2) social platform manufacturing, in which firms pr...

  11. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  12. Report on achievement in the preceding research related to global industry technologies for the global industry technology research and development project. Research on gas systems substituting global warming gases such as PFC used in manufacturing semiconductors; 1998 nendo chikyu kankyo sangyo gijutsu ni kakawaru sendo kenkyu. Handotai seizo nado ni shiyosuru PFC nado no chikyu ondanka gas no daitai gas system no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    The present semiconductor manufacturing process uses a great amount of PFC having large global warming coefficients and extremely long atmospheric life. A research was made particularly on reduction of its emission from etching processes. After introducing how the semiconductor industry has been working conventionally on protection of the global environment, this paper makes clear the purpose and positioning of this preceding research, as well as how it is moved forward. The paper also reports the results of analyzing and discussing the exhaust gases from etching devices using several kinds of substitute PFC gases. Survey results are reported on the possibilities of new substitute gases, plasma decomposition and treatment of exhaust gases, reaction process simulation, and in-situ analyzing and evaluating technologies. Investigations were made on the possibility of using no PFC in wiring processes which consume greater amount of PFC, as well as on wiring techniques using inter-layer insulation film with low dielectric rate, a new wiring structure forming technology, new functional elements, circuits and systems in a wide range. Proposals were given on specific research and development themes and plans that begin in fiscal 1999. (NEDO)

  13. Report of the Design Approval and the Safety Issues of the Ion Accelerator for Manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Min, Yi Sub; Lee, Chan Young [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2013-05-15

    The application of ion implantation technology has been extended to the field of semiconductor, as well as of metals, ceramics and polymers. A change in the characteristics of the surface that is required in industries is various. To manufacture these devices which are by requirements of industrial, anyone must be licensed by nuclear law; producing permit. And that device must be certified to safety through the design approval. For the first time in domestic, Korea Multipurpose Accelerator Complex (KOMAC) has finished the producing facility inspection as well as the producing permit in August 2012 that can produce four types of radiation generator(RG)

  14. Novel active driven drop tower facility for microgravity experiments investigating production technologies on the example of substrate-free additive manufacturing

    Science.gov (United States)

    Lotz, Christoph; Wessarges, Yvonne; Hermsdorf, Jörg; Ertmer, Wolfgang; Overmeyer, Ludger

    2018-04-01

    Through the striving of humanity into space, new production processes and technologies for the use under microgravity will be essential in the future. Production of objects in space demands for new processes, like additive manufacturing. This paper presents the concept and the realization for a new machine to investigate microgravity production processes on earth. The machine is based on linear long stator drives and a vacuum chamber carrying up to 1000 kg. For the first time high repetition rate and associated low experimental costs can provide basic research. The paper also introduces the substrate-free additive manufacturing as a future research topic and one of our primary application.

  15. Transfer of manufacturing units

    DEFF Research Database (Denmark)

    Madsen, Erik Skov; Riis, Jens Ove; Sørensen, Brian Vejrum

    2008-01-01

    The ongoing and unfolding relocation of activities is one of the major trends, that calls for attention in the domain of operations management. In particular, prescriptive models outlining: stages of the process, where to locate, and how to establish the new facilities have been studied, while...... and dilemmas to be addressed when transferring manufacturing units....

  16. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  17. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  18. Fabrication and application of amorphous semiconductor devices

    International Nuclear Information System (INIS)

    Kumurdjian, Pierre.

    1976-01-01

    This invention concerns the design and manufacture of elecric switching or memorisation components with amorphous semiconductors. As is known some compounds, particularly the chalcogenides, have a resistivity of the semiconductor type in the amorphous solid state. These materials are obtained by the high temperature homogeneisation of several single elements such as tellurium, arsenic, germanium and sulphur, followed by water or air quenching. In particular these compounds have useful switching and memorisation properties. In particular they have the characteristic of not suffering deterioration when placed in an environment subjected to nuclear radiations. In order to know more about the nature and properties of these amorphous semiconductors the French patent No. 71 28048 of 30 June 1971 may be consulted with advantage [fr

  19. Precision manufacturing

    CERN Document Server

    Dornfeld, David

    2008-01-01

    Today there is a high demand for high-precision products. The manufacturing processes are now highly sophisticated and derive from a specialized genre called precision engineering. Precision Manufacturing provides an introduction to precision engineering and manufacturing with an emphasis on the design and performance of precision machines and machine tools, metrology, tooling elements, machine structures, sources of error, precision machining processes and precision process planning. As well as discussing the critical role precision machine design for manufacturing has had in technological developments over the last few hundred years. In addition, the influence of sustainable manufacturing requirements in precision processes is introduced. Drawing upon years of practical experience and using numerous examples and illustrative applications, David Dornfeld and Dae-Eun Lee cover precision manufacturing as it applies to: The importance of measurement and metrology in the context of Precision Manufacturing. Th...

  20. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  1. FY 1999 report on the results of the model project for facilities for effective utilization of paper-manufacturing sludge, etc.; 1999 nendo seika hokoku. Seishi surajji tou yuko riyo setubi moderu jigyo

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    For the purpose of contributing to the reduction in the energy consumption in the paper/pulp industry which is an industry of much energy consumption in Indonesia and to the stable energy supply in Japan, a model project for facilities for effective utilization of paper sludge, etc. was carried out, and the FY 1999 results were reported. Concretely, the paper sludge and solid waste discharged from the paper-manufacturing process are to be incinerated in self-combustion in fluidized bed incinerator. Further, the remaining heat is to be recovered as steam from the combustion exhaust gas for the effective utilization within plant. This verifies the reduction in energy consumption and reduction in emission of greenhouse effect gas. Activities for spread of the said facilities are to be made in Indonesia. The site for this project is FSW located in Bekasi, West Jawa. This is a private paper company which manufactures cardboard use paper of 0.5 million t/y using used paper as raw material. In this fiscal year, instructors were sent to FSW for installation/construction work according to the basic agreement and the attachment to the agreement. (NEDO)

  2. 76 FR 39127 - Manufacturer of Controlled Substances; Notice of Application

    Science.gov (United States)

    2011-07-05

    ... Administration (DEA) to be registered as a bulk manufacturer of Remifentanil (9739) the basic class of controlled substance in schedule II. The company plans to utilize this facility to manufacture small quantities of the... primary manufacturing facility in West Deptford, New Jersey. The controlled substances manufactured in...

  3. 77 FR 5849 - Manufacturer of Controlled Substances; Notice of Registration

    Science.gov (United States)

    2012-02-06

    ... (DEA) to be registered as a bulk manufacturer of Remifentanil (9739), the basic class of controlled substance in schedule II. The company plans to utilize this facility to manufacture small quantities of the... manufacturing facility in West Deptford, New Jersey. The controlled substances manufactured in bulk at this...

  4. Pellet to Part Manufacturing System for CNCs

    Energy Technology Data Exchange (ETDEWEB)

    Roschli, Alex C. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Love, Lonnie J. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Post, Brian K. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Chesser, Phillip C. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Lloyd, Peter D. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Bandari, Yashwanth Kumar [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Jones, Jason [Hybrid Manufacturing Technologies, Swadlincote (United Kingdom); Gaul, Katherine T. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2018-03-14

    Oak Ridge National Laboratory’s Manufacturing Demonstration Facility worked with Hybrid Manufacturing Technologies to develop a compact prototype composite additive manufacturing head that can effectively extrude injection molding pellets. The head interfaces with conventional CNC machine tools enabling rapid conversion of conventional machine tools to additive manufacturing tools. The intent was to enable wider adoption of Big Area Additive Manufacturing (BAAM) technology and combine BAAM technology with conventional machining systems.

  5. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  6. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  7. Solid state semiconductor detectorized survey meter

    International Nuclear Information System (INIS)

    Okamoto, Eisuke; Nagase, Yoshiyuki; Furuhashi, Masato

    1987-01-01

    Survey meters are used for measurement of gamma ray dose rate of the space and the surface contamination dencity that the atomic energy plant and the radiation facility etc. We have recently developed semiconductor type survey meter (Commercial name: Compact Survey Meter). This survey meter is a small-sized dose rate meter with excellent function. The special features are using semiconductor type detector which we have developed by our own technique, stablar wide range than the old type, long life, and easy to carry. Now we introduce the efficiency and the function of the survey meter. (author)

  8. Application of statistics to VLSI circuit manufacturing : test, diagnosis, and reliability

    NARCIS (Netherlands)

    Krishnan, Shaji

    2017-01-01

    Semiconductor product manufacturing companies strive to deliver defect free, and reliable products to their customers. However, with the down-scaling of technology, increasing the throughput at every stage of semiconductor product manufacturing becomes a harder challenge. To avoid process-related

  9. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  10. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  11. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  12. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  13. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  14. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  15. Additive manufacturing.

    Science.gov (United States)

    Mumith, A; Thomas, M; Shah, Z; Coathup, M; Blunn, G

    2018-04-01

    Increasing innovation in rapid prototyping (RP) and additive manufacturing (AM), also known as 3D printing, is bringing about major changes in translational surgical research. This review describes the current position in the use of additive manufacturing in orthopaedic surgery. Cite this article: Bone Joint J 2018;100-B:455-60.

  16. National Manufacturing Strategy: Is a National Manufacturing Strategy Essential to National Security?

    Science.gov (United States)

    2011-05-01

    cycle found nearly a quarter of all homeowners owning more than their home was worth. 11 Both Paul Volcker and Warren Buffet arrived at similar...November 15, 2010; Warren Buffet , Testimony, Financial Crisis Inquiry Commission, June 2, 2010; “Subprime Mortgage Crisis,” http://en.wikipedia.org...overseas manufacturing. Case Study: Semiconductor Wafer Industry. The history of the semiconductor industry is an instructive account . It begins with

  17. TSOM method for semiconductor metrology

    Science.gov (United States)

    Attota, Ravikiran; Dixson, Ronald G.; Kramar, John A.; Potzick, James E.; Vladár, András E.; Bunday, Benjamin; Novak, Erik; Rudack, Andrew

    2011-03-01

    Through-focus scanning optical microscopy (TSOM) is a new metrology method that achieves 3D nanoscale measurement sensitivity using conventional optical microscopes; measurement sensitivities are comparable to what is typical when using scatterometry, scanning electron microscopy (SEM), and atomic force microscopy (AFM). TSOM can be used in both reflection and transmission modes and is applicable to a variety of target materials and shapes. Nanometrology applications that have been demonstrated by experiments or simulations include defect analysis, inspection and process control; critical dimension, photomask, overlay, nanoparticle, thin film, and 3D interconnect metrologies; line-edge roughness measurements; and nanoscale movements of parts in MEMS/NEMS. Industries that could benefit include semiconductor, data storage, photonics, biotechnology, and nanomanufacturing. TSOM is relatively simple and inexpensive, has a high throughput, and provides nanoscale sensitivity for 3D measurements with potentially significant savings and yield improvements in manufacturing.

  18. Fundamentals of semiconductor processing technology

    CERN Document Server

    El-Kareh, Badih

    1995-01-01

    The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac­ turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil­ ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech­ n...

  19. Semiconductor nanostructures for artificial photosynthesis

    Science.gov (United States)

    Yang, Peidong

    2012-02-01

    Nanowires, with their unique capability to bridge the nanoscopic and macroscopic worlds, have already been demonstrated as important materials for different energy conversion. One emerging and exciting direction is their application for solar to fuel conversion. The generation of fuels by the direct conversion of solar energy in a fully integrated system is an attractive goal, but no such system has been demonstrated that shows the required efficiency, is sufficiently durable, or can be manufactured at reasonable cost. One of the most critical issues in solar water splitting is the development of a suitable photoanode with high efficiency and long-term durability in an aqueous environment. Semiconductor nanowires represent an important class of nanostructure building block for direct solar-to-fuel application because of their high surface area, tunable bandgap and efficient charge transport and collection. Nanowires can be readily designed and synthesized to deterministically incorporate heterojunctions with improved light absorption, charge separation and vectorial transport. Meanwhile, it is also possible to selectively decorate different oxidation or reduction catalysts onto specific segments of the nanowires to mimic the compartmentalized reactions in natural photosynthesis. In this talk, I will highlight several recent examples in this lab using semiconductor nanowires and their heterostructures for the purpose of direct solar water splitting.

  20. New Icosahedral Boron Carbide Semiconductors

    Science.gov (United States)

    Echeverria Mora, Elena Maria

    Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

  1. Robotics and automation in manufacture

    International Nuclear Information System (INIS)

    Glasgow, J.R.

    1989-01-01

    NEI involvement in Heysham II and Torness included contracts for equipment both for the Nuclear Island and for non-nuclear associated plant. Fundamental to the approach to manufacture was the capital investment in plant and facilities to ensure the quality requirements were met with economic production methods and prompt delivery. Some of the production facilities for a selection of varied components are described. Examples of subsequent development of facilities are given to illustrate their current capability. (author)

  2. Development of manufacturing capability for the fabrication of the Nb3Sn superconductor for the High Field Test Facility. Final report

    International Nuclear Information System (INIS)

    Spencer, C.R.

    Construction of High Field Test Facility (HFTF) at Lawrence Livermore Laboratory (LLNL) requires an extended surface Nb 3 Sn superconductor cable of carrying currents in excess of 7500 amperes in a 12 Tesla magnetic field. This conductor consists of a 5.4 mm x 11.0 mm superconducting core onto whose broad surfaces are soldered embossed oxygen free copper strips. Two different core designs have been developed and the feasibility of each design evaluated. Equipment necessary to produce the conductor were developed and techniques of production were explored

  3. Radio Frequency Anechoic Chamber Facility

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Supports the design, manufacture, and test of antenna systems. The facility is also used as an electromagnetic compatibility/radio frequency interference...

  4. Materials Engineering Research Facility (MERF)

    Data.gov (United States)

    Federal Laboratory Consortium — Argonne?s Materials Engineering Research Facility (MERF) enables engineers to develop manufacturing processes for producing advanced battery materials in sufficient...

  5. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  6. Introduction to Semiconductor Devices

    Science.gov (United States)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  7. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  8. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  9. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  10. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  11. Solution coating of large-area organic semiconductor thin films with aligned single-crystalline domains

    KAUST Repository

    Diao, Ying; Tee, Benjamin C-K.; Giri, Gaurav; Xu, Jie; Kim, Do Hwan; Becerril, Hector A.; Stoltenberg, Randall M.; Lee, Tae Hoon; Xue, Gi; Mannsfeld, Stefan C. B.; Bao, Zhenan

    2013-01-01

    Solution coating of organic semiconductors offers great potential for achieving low-cost manufacturing of large-area and flexible electronics. However, the rapid coating speed needed for industrial-scale production poses challenges to the control

  12. Educating Tomorrow's Workforce: A Report on the Semiconductor Industry's Commitment to Youth in K-12.

    Science.gov (United States)

    Semiconductor Industry Association, San Jose, CA.

    The U.S. semiconductor industry, now the nation's largest manufacturing industry, displays its commitment to training its current workers and educating future workers by supporting educational efforts on the K-12 level. This catalog describes innovative actions by 16 Semiconductor Industry Association companies to improve education at the K-12…

  13. Micro Manufacturing

    DEFF Research Database (Denmark)

    Hansen, Hans Nørgaard

    2003-01-01

    Manufacturing deals with systems that include products, processes, materials and production systems. These systems have functional requirements, constraints, design parameters and process variables. They must be decomposed in a systematic manner to achieve the best possible system performance....... If a micro manufacturing system isn’t designed rationally and correctly, it will be high-cost, unreliable, and not robust. For micro products and systems it is a continuously increasing challenge to create the operational basis for an industrial production. As the products through product development...... processes are made applicable to a large number of customers, the pressure in regard to developing production technologies that make it possible to produce the products at a reasonable price and in large numbers is growing. The micro/nano manufacturing programme at the Department of Manufacturing...

  14. Smart Manufacturing.

    Science.gov (United States)

    Davis, Jim; Edgar, Thomas; Graybill, Robert; Korambath, Prakashan; Schott, Brian; Swink, Denise; Wang, Jianwu; Wetzel, Jim

    2015-01-01

    Historic manufacturing enterprises based on vertically optimized companies, practices, market share, and competitiveness are giving way to enterprises that are responsive across an entire value chain to demand dynamic markets and customized product value adds; increased expectations for environmental sustainability, reduced energy usage, and zero incidents; and faster technology and product adoption. Agile innovation and manufacturing combined with radically increased productivity become engines for competitiveness and reinvestment, not simply for decreased cost. A focus on agility, productivity, energy, and environmental sustainability produces opportunities that are far beyond reducing market volatility. Agility directly impacts innovation, time-to-market, and faster, broader exploration of the trade space. These changes, the forces driving them, and new network-based information technologies offering unprecedented insights and analysis are motivating the advent of smart manufacturing and new information technology infrastructure for manufacturing.

  15. High Volume Manufacturing and Field Stability of MEMS Products

    Science.gov (United States)

    Martin, Jack

    Low volume MEMS/NEMS production is practical when an attractive concept is implemented with business, manufacturing, packaging, and test support. Moving beyond this to high volume production adds requirements on design, process control, quality, product stability, market size, market maturity, capital investment, and business systems. In a broad sense, this chapter uses a case study approach: It describes and compares the silicon-based MEMS accelerometers, pressure sensors, image projection systems, and gyroscopes that are in high volume production. Although they serve several markets, these businesses have common characteristics. For example, the manufacturing lines use automated semiconductor equipment and standard material sets to make consistent products in large quantities. Standard, well controlled processes are sometimes modified for a MEMS product. However, novel processes that cannot run with standard equipment and material sets are avoided when possible. This reliance on semiconductor tools, as well as the organizational practices required to manufacture clean, particle-free products partially explains why the MEMS market leaders are integrated circuit manufacturers. There are other factors. MEMS and NEMS are enabling technologies, so it can take several years for high volume applications to develop. Indeed, market size is usually a strong function of price. This becomes a vicious circle, because low price requires low cost - a result that is normally achieved only after a product is in high volume production. During the early years, IC companies reduced cost and financial risk by using existing facilities for low volume MEMS production. As a result, product architectures are partially determined by capabilities developed for previous products. This chapter includes a discussion of MEMS product architecture with particular attention to the impact of electronic integration, packaging, and surfaces. Packaging and testing are critical, because they are

  16. Semiconductor industry wafer fab exhaust management

    CERN Document Server

    Sherer, Michael J

    2005-01-01

    Given the myriad exhaust compounds and the corresponding problems that they can pose in an exhaust management system, the proper choice of such systems is a complex task. Presenting the fundamentals, technical details, and general solutions to real-world problems, Semiconductor Industry: Wafer Fab Exhaust Management offers practical guidance on selecting an appropriate system for a given application. Using examples that provide a clear understanding of the concepts discussed, Sherer covers facility layout, support facilities operations, and semiconductor process equipment, followed by exhaust types and challenges. He reviews exhaust point-of-use devices and exhaust line requirements needed between process equipment and the centralized exhaust system. The book includes information on wet scrubbers for a centralized acid exhaust system and a centralized ammonia exhaust system and on centralized equipment to control volatile organic compounds. It concludes with a chapter devoted to emergency releases and a separ...

  17. Facility effluent monitoring plan determinations for the 400 Area facilities

    International Nuclear Information System (INIS)

    Nickels, J.M.

    1991-09-01

    This Facility Effluent Monitoring Plan determination resulted from an evaluation conducted for the Westinghouse Hanford Company 400 Area facilities on the Hanford Site. The Facility Effluent Monitoring Plan determinations have been prepared in accordance with A Guide for Preparing Hanford Site Facility Effluent Monitoring Plans. Two major Westinghouse Hanford Company facilities in the 400 Area were evaluated: the Fast Flux Test Facility and the Fuels Manufacturing and examination Facility. The determinations were prepared by Westinghouse Hanford Company. Of these two facilities, only the Fast Flux Test Facility will require a Facility Effluent Monitoring Plan. 7 refs., 5 figs., 4 tabs

  18. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  19. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  20. Metrology needs and challenges for the semiconductor industry

    International Nuclear Information System (INIS)

    Schroeder, Kenneth; Ashkenaz, Scott; Hankinson, Matt

    2001-01-01

    The aggressively shrinking process window drives the semiconductor manufacturer to examine, refine, and control all aspects of the manufacturing process. Process budgets leave little room for error contribution. Budget management, and ultimately achieving the goal, requires an understanding of the constituent components, and development of mitigation strategies. We present some of the challenges facing our industry and strategies that we are taking to address them

  1. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  2. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  3. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  4. Power electronic modules design and manufacture

    CERN Document Server

    Sheng, William W

    2004-01-01

    IntroductionSelection ProcedureMaterialsInsulating Substrate and MetallizationBase PlateBonding MaterialPower Interconnection and TerminalEncapsulantPlastic Case and Cover Manufacturing of Power IGBT ModulesManufacturing Process Process Control/Long-Term ReliabilityManufacturing FacilitiesManufacturing Flow Charts DesignThermal ManagementCircuit PartitioningDesign Guidelines and ConsiderationsThermal Results of Different Samples

  5. Environmental, Health and Safety Assessment: ATS 7H Program (Phase 3R) Test Activities at the GE Power Systems Gas Turbine Manufacturing Facility, Greenville, SC

    Energy Technology Data Exchange (ETDEWEB)

    None

    1998-11-17

    International Technology Corporation (IT) was contracted by General Electric Company (GE) to assist in the preparation of an Environmental, Health and Safety (HI&3) assessment of the implementation of Phase 3R of the Advanced Turbine System (ATS) 7H program at the GE Gas Turbines facility located in Greenville, South Carolina. The assessment was prepared in accordance with GE's contractual agreement with the U.S. Department of Energy (GE/DOE Cooperative Agreement DE-FC21-95MC3 1176) and supports compliance with the requirements of the National Environmental Policy Act of 1970. This report provides a summary of the EH&S review and includes the following: General description of current site operations and EH&S status, Description of proposed ATS 7H-related activities and discussion of the resulting environmental, health, safety and other impacts to the site and surrounding area. Listing of permits and/or licenses required to comply with federal, state and local regulations for proposed 7H-related activities. Assessment of adequacy of current and required permits, licenses, programs and/or plans.

  6. Semiconductor technology for reducing emissions and increasing efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Duffin, B.; Frank, R. [Motorola Semiconductor Products Sector, Phoenix, AZ (United States)

    1997-12-31

    The cooperation and support of all industries are required to significantly impact a worldwide reduction in gaseous emissions that may contribute to climate change. Each industry also is striving to more efficiently utilize the resources that it consumes since this is both conservation for good citizenship and an intelligent approach to business. The semiconductor industry is also extremely concerned with these issues. However, semiconductor manufacturer`s products provide solutions for reduced emissions and increased efficiency in their industry, other industries and areas that can realize significant improvements through control technology. This paper will focus on semiconductor technologies of digital control, power switching and sensing to improve efficiency and reduce emissions in automotive, industrial, and office/home applications. 10 refs., 13 figs.

  7. Janus droplets: liquid marbles coated with dielectric/semiconductor particles.

    Science.gov (United States)

    Bormashenko, Edward; Bormashenko, Yelena; Pogreb, Roman; Gendelman, Oleg

    2011-01-04

    The manufacturing of water droplets wrapped with two different powders, carbon black (semiconductor) and polytetrafluoroethylene (dielectric), is presented. Droplets composed of two hemispheres (Janus droplets) characterized by various physical and chemical properties are reported first. Watermelon-like striped liquid marbles are reported. Janus droplets remained stable on solid and liquid supports and could be activated with an electric field.

  8. Technician Training for the Semiconductor Microdevices Industry. Final Report.

    Science.gov (United States)

    Center for Occupational Research and Development, Inc., Waco, TX.

    The Center for Occupational Research and Development (CORD) carried out four activities to foster semiconductor manufacturing technician (SMT) training: (1) collaboration with industry experts and educators while developing a curriculum to train SMTs; (2) implementation and testing of the curriculum at a technical college; (3) dissemination of…

  9. Measurement of ionising radiation semiconductor detectors: a review

    International Nuclear Information System (INIS)

    Aussel, J.P.

    1986-06-01

    Manufacturing techniques for nuclear detectors using semiconductors are constantly advancing, and a large range of models with different specificities and characteristics are available. After a theoretical reminder, this report describes the main types of detectors, their working and their preferential use. A comparative table guides the neophyte reader in his choice [fr

  10. Achievement Report for fiscal 1997 on developing a silicon manufacturing process with reduced energy consumption. Development of silicon mass-production manufacturing technology for solar cells; 1997 nendo energy shiyo gorika silicon seizo process kaihatsu. Taiyo denchiyo silicon ryosanka seizo gijutsu no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    In order to manufacture silicon for solar cells, development is intended on a technology to manufacture silicon (SOG-Si) for solar cells by means of metallurgical methods using metallic silicon with purity generally available as an interim starting material. The silicon is required of p-type electric conductivity characteristics with specific resistance of 0.5 to 1.5 ohm per cm, to be sufficient even with 6-7N as compared to silicon for semiconductors (11-N), and to be low in cost. While the NEDO fluid bed process and the metallurgical NEDO direct reduction process have been developed based on the technology to manufacture silicon for semiconductors, the basic policy was established to develop a new manufacturing method using commercially available high-purity metallic silicon as an interim starting material, with an objective to achieve cost as low as capable of responding to small-quantity phase production for proliferation purpose. Removal of boron and phosphor has been the main issue in the development, whereas SOG-Si was manufactured in a laboratory scale by combining with the conventional component technologies in fiscal 1991 and 1992. The scale was expanded to 20 kg since fiscal 1993, and a five year plan starting fiscal 1996 was decided to develop the technology for industrial scale. Fiscal 1997 has promoted the development by using the 20-kg scale device, and introduced facilities to develop technology for mass-production scale. (NEDO)

  11. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  12. LEAN Manufacturing

    DEFF Research Database (Denmark)

    Bilberg, Arne

    . The mission with the strategy is to obtain competitive production in Denmark and in Western Europe based on the right combination of manufacturing principles, motivated and trained employees, level of automation, and cooperation with suppliers and customers worldwide. The strategy has resulted in technical...

  13. Flexibility in fuel manufacturing

    International Nuclear Information System (INIS)

    Reparaz, A.; Stavig, W.E.; McLees, R.B.

    1987-01-01

    From its inception Exxon Nuclear has produced both BWR and PWR fuels. This is reflected in a product line that, to date, includes over 20 fuel designs. These range from 6x6 design at one end of the spectrum to the recently introduced 17x17 design. The benefits offered include close tailoring of the fuel design to match the customer's requirements, and the ability to rapidly introduce product changes, such as the axial blanket design, with a minimal impact on manufacturing. This flexibility places a number of demands on the manufacturing organization. Close interfaces must be established, and maintained, between the marketing, product design, manufacturing, purchasing and quality organizations, and the information flows must be immediate and accurate. Production schedules must be well planned and must be maintained or revised to reflect changing circumstances. Finally, the manufacturing facilities must be designed to allow rapid switchover between product designs with minor tooling changes and/or rerouting of product flows to alternate work stations. Among the tools used to manage the flow of information and to maintain the tight integration necessary between the various manufacturing, engineering and quality organizations is a commercially available, computerized planning and tracking system, AMAPS. A real-time production data collection system has been designed which gathers data from each production work station for use by the shop floor control module of AMAPS. Accuracy of input to the system is improved through extensive use of bar codes to gather information on the product as it moves through and between work stations. This computerized preparation of material tracing has an impact on direct manufacturing records, quality control records, nuclear material records and accounting and inventory records. This is of benefit to both Exxon Nuclear and its customers

  14. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  15. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  16. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  17. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  18. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  19. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  20. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  1. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  2. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  3. Tunable radiation emitting semiconductor device

    NARCIS (Netherlands)

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  4. Robot skills for manufacturing

    DEFF Research Database (Denmark)

    Pedersen, Mikkel Rath; Nalpantidis, Lazaros; Andersen, Rasmus Skovgaard

    2016-01-01

    -asserting robot skills for manufacturing. We show how a relatively small set of skills are derived from current factory worker instructions, and how these can be transferred to industrial mobile manipulators. General robot skills can not only be implemented on these robots, but also be intuitively concatenated...... products are introduced by manufacturers. In order to compete on global markets, the factories of tomorrow need complete production lines, including automation technologies that can effortlessly be reconfigured or repurposed, when the need arises. In this paper we present the concept of general, self...... in running production facilities at an industrial partner. It follows from these experiments that the use of robot skills, and associated task-level programming framework, is a viable solution to introducing robots that can intuitively and on the fly be programmed to perform new tasks by factory workers....

  5. The manufacturers' viewpoint

    International Nuclear Information System (INIS)

    Davis, D.A.

    1986-01-01

    This paper describes the approach by six separate manufacturers to the problem of availability from their particular view point. This presentation demonstrates basic strategy: attention to high reliability at the design phase, based on positive and detailed feedback from existing plant; quality assurance at the production stage which has been planned into the production process in the form of a Q.A. manual in design; sophisticated test procedures and facilities; simplicity of design with high accuracy in production; provision of a clear operational maintenance manual, etc. The manufacturers agreed on the need to make a conscious commitment to design for high availability, taking into account both initial and ongoing operating costs in life cycle cost assessment. Predictability, reliability, maintainability, efficiency, market acceptability and maintenance support based on high quality feedback between operator and supplier were all stressed on the grounds that prevention is always better than cure

  6. Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

    International Nuclear Information System (INIS)

    Deri, R.J.

    2011-01-01

    Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a ∼ 200 (micro)s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

  7. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  8. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  9. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  10. Green Manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Patten, John

    2013-12-31

    Green Manufacturing Initiative (GMI): The initiative provides a conduit between the university and industry to facilitate cooperative research programs of mutual interest to support green (sustainable) goals and efforts. In addition to the operational savings that greener practices can bring, emerging market demands and governmental regulations are making the move to sustainable manufacturing a necessity for success. The funding supports collaborative activities among universities such as the University of Michigan, Michigan State University and Purdue University and among 40 companies to enhance economic and workforce development and provide the potential of technology transfer. WMU participants in the GMI activities included 20 faculty, over 25 students and many staff from across the College of Engineering and Applied Sciences; the College of Arts and Sciences' departments of Chemistry, Physics, Biology and Geology; the College of Business; the Environmental Research Institute; and the Environmental Studies Program. Many outside organizations also contribute to the GMI's success, including Southwest Michigan First; The Right Place of Grand Rapids, MI; Michigan Department of Environmental Quality; the Michigan Department of Energy, Labor and Economic Growth; and the Michigan Manufacturers Technical Center.

  11. Depletion field focusing in semiconductors

    NARCIS (Netherlands)

    Prins, M.W.J.; Gelder, Van A.P.

    1996-01-01

    We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

  12. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  13. Semi-conductor rectifiers

    International Nuclear Information System (INIS)

    1981-01-01

    A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

  14. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  15. Good manufacturing practice

    International Nuclear Information System (INIS)

    Schlyer, D.J.

    2001-01-01

    In this presentation author deals with the Implementation of good manufacturing practice for radiopharmaceuticals. The presentation is divided into next parts: Batch size; Expiration date; QC Testing; Environmental concerns; Personnel aspects; Radiation concerns; Theoretical yields; Sterilizing filters; Control and reconciliation of materials and components; Product strength; In process sampling and testing; Holding and distribution; Drug product inspection; Buildings and facilities; Renovations at BNL for GMP; Aseptic processing and sterility assurance; Process validation and control; Quality control and drug product stability; Documentation and other GMP topics; Building design considerations; Equipment; and Summary

  16. Australian national networked tele-test facility for integrated systems

    Science.gov (United States)

    Eshraghian, Kamran; Lachowicz, Stefan W.; Eshraghian, Sholeh

    2001-11-01

    The Australian Commonwealth government recently announced a grant of 4.75 million as part of a 13.5 million program to establish a world class networked IC tele-test facility in Australia. The facility will be based on a state-of-the-art semiconductor tester located at Edith Cowan University in Perth that will operate as a virtual centre spanning Australia. Satellite nodes will be located at the University of Western Australia, Griffith University, Macquarie University, Victoria University and the University of Adelaide. The facility will provide vital equipment to take Australia to the frontier of critically important and expanding fields in microelectronics research and development. The tele-test network will provide state of the art environment for the electronics and microelectronics research and the industry community around Australia to test and prototype Very Large Scale Integrated (VLSI) circuits and other System On a Chip (SOC) devices, prior to moving to the manufacturing stage. Such testing is absolutely essential to ensure that the device performs to specification. This paper presents the current context in which the testing facility is being established, the methodologies behind the integration of design and test strategies and the target shape of the tele-testing Facility.

  17. Modular manufacturing processes : Status, challenges, and opportunities

    NARCIS (Netherlands)

    Baldea, Michael; Edgar, Thomas F.; Stanley, Bill L.; Kiss, Anton A.

    2017-01-01

    Chemical companies are constantly seeking new, high-margin growth opportunities, the majority of which lie in high-grade, specialty chemicals, rather than in the bulk sector. To realize these opportunities, manufacturers are increasingly considering decentralized, flexible production facilities:

  18. Automated defect spatial signature analysis for semiconductor manufacturing process

    Science.gov (United States)

    Tobin, Jr., Kenneth W.; Gleason, Shaun S.; Karnowski, Thomas P.; Sari-Sarraf, Hamed

    1999-01-01

    An apparatus and method for performing automated defect spatial signature alysis on a data set representing defect coordinates and wafer processing information includes categorizing data from the data set into a plurality of high level categories, classifying the categorized data contained in each high level category into user-labeled signature events, and correlating the categorized, classified signature events to a present or incipient anomalous process condition.

  19. The Flexible Foundry: Advanced Reconfigurable Manufacturing for Semiconductors

    Data.gov (United States)

    Federal Laboratory Consortium —  Sometimes it is not a device that is obsolete, but an idea. In logistics terms, the problem is not that the device becomes obsolete; the problem is that the device...

  20. 76 FR 36472 - Mandatory Reporting of Greenhouse Gases; Changes to Provisions for Electronics Manufacturing...

    Science.gov (United States)

    2011-06-22

    ... Mandatory Reporting of Greenhouse Gases; Changes to Provisions for Electronics Manufacturing (Subpart I) To... proposing changes to the calculation and monitoring provisions in the Electronics Manufacturing portion... Category Examples of affected Category NAICS facilities Electronics Manufacturing......... 334111...

  1. 10 CFR 611.206 - Existing facilities.

    Science.gov (United States)

    2010-01-01

    ... 10 Energy 4 2010-01-01 2010-01-01 false Existing facilities. 611.206 Section 611.206 Energy... PROGRAM Facility/Funding Awards § 611.206 Existing facilities. The Secretary shall, in making awards to those manufacturers that have existing facilities, give priority to those facilities that are oldest or...

  2. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  3. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  4. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  5. Three dimensional strained semiconductors

    Science.gov (United States)

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  6. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  7. Optically coupled semiconductor device

    Energy Technology Data Exchange (ETDEWEB)

    Kumagaya, Naoki

    1988-11-18

    This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

  8. Fuel manufacturing and utilization

    International Nuclear Information System (INIS)

    2005-01-01

    The efficient utilisation of nuclear fuel requires manufacturing facilities capable of making advanced fuel types, with appropriate quality control. Once made, the use of such fuels requires a proper understanding of their behaviour in the reactor environment, so that safe operation for the design life can be achieved. The International Atomic Energy Agency supports Member States to improve in-pile fuel performance and management of materials; and to develop advanced fuel technologies for ensuring reliability and economic efficiency of the nuclear fuel cycle. It provides assistance to Member States to support fuel-manufacturing capability, including quality assurance techniques, optimization of manufacturing parameters and radiation protection. The IAEA supports the development fuel modelling expertise in Member States, covering both normal operation and postulated and severe accident conditions. It provides information and support for the operation of Nuclear Power Plant to ensure that the environment and water chemistry is appropriate for fuel operation. The IAEA supports fuel failure investigations, including equipment for failed fuel detection and for post-irradiation examination and inspection, as well as fuel repair, it provides information and support research into the basic properties of fuel materials, including UO 2 , MOX and zirconium alloys. It further offers guidance on the relationship with back-end requirement (interim storage, transport, reprocessing, disposal), fuel utilization and management, MOX fuels, alternative fuels and advanced fuel technology

  9. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  11. Muonium states in semiconductors

    International Nuclear Information System (INIS)

    Patterson, B.D.

    1987-01-01

    There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

  12. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  13. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  15. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  16. Semiconductor Ion Implanters

    International Nuclear Information System (INIS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-01-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  17. The Physics of Semiconductors

    Science.gov (United States)

    Brennan, Kevin F.

    1999-02-01

    Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

  18. Multilayer Semiconductor Charged-Particle Spectrometers for Accelerator Experiments

    Science.gov (United States)

    Gurov, Yu. B.; Lapushkin, S. V.; Sandukovsky, V. G.; Chernyshev, B. A.

    2018-03-01

    The current state of studies in the field of development of multilayer semiconductor systems (semiconductor detector (SCD) telescopes), which allow the energy to be precisely measured within a large dynamic range (from a few to a few hundred MeV) and the particles to be identified in a wide mass range (from pions to multiply charged nuclear fragments), is presented. The techniques for manufacturing the SCD telescopes from silicon and high-purity germanium are described. The issues of measuring characteristics of the constructed detectors and their impact on the energy resolution of the SCD telescopes and on the quality of the experimental data are considered. Much attention is given to the use of the constructed semiconductor devices in experimental studies at accelerators of PNPI (Gatchina), LANL (Los Alamos) and CELSIUS (Uppsala).

  19. Cancer and reproductive risks in the semiconductor industry.

    Science.gov (United States)

    LaDou, Joseph; Bailar, John C

    2007-01-01

    Although many reproductive toxicants and carcinogens are used in the manufacture of semiconductor chips, and worrisome findings have been reported, no broad epidemiologic study has been conducted to define possible risks in a comprehensive way. With few exceptions, the American semiconductor industry has not supported access for independent studies. Older technologies are exported to newly industrialized countries as newer technologies are installed in Japan, the United States, and Europe. Thus there is particular concern about the many workers, mostly in countries that are still industrializing, who have jobs that use chemicals, technologies, and equipment that are no longer in use in developed countries. Since most countries lack cancer registries and have inadequate reproductive and cancer reporting mechanisms, industry efforts to control exposures to carcinogens are of particular importance. Government agencies, the courts, industry, publishers, and academia, on occasion, collude to ignore or to downplay the importance of occupational diseases. Examples of how this happens in the semiconductor industry are presented.

  20. Evaluation of efficiency of a semiconductor gamma camera

    CERN Document Server

    Otake, H; Takeuchi, Y

    2002-01-01

    We evaluation basic characteristics of a compact type semiconductor gamma camera (eZ-SCOPE AN) of Cadmium Zinc Telluride (CdZnTe). This new compact gamma camera has 256 semiconductors representing the same number of pixels. Each semiconductor is 2 mm square and is located in 16 lines and rows on the surface of the detector. The specific performance characteristics were evaluated in the study referring to National Electrical Manufactures Association (NEMA) standards; intrinsic energy resolution, intrinsic count rate performance, integral uniformity, system planar sensitivity, system spatial resolution, and noise to the neighboring pixels. The intrinsic energy resolution measured 5.7% as full width half maximum (FWHM). The intrinsic count rate performance ranging from 17 kcps to 1,285 kcps was evaluated, but the highest intrinsic count rate was not observed. Twenty percents count loss was recognized at 1,021 kcps. The integral uniformity was 1.3% with high sensitivity collimator. The system planar sensitivity w...

  1. Electrodes for Semiconductor Gas Sensors

    Science.gov (United States)

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  2. Manufactured volvulus.

    Science.gov (United States)

    Zweifel, Noemi; Meuli, Martin; Subotic, Ulrike; Moehrlen, Ueli; Mazzone, Luca; Arlettaz, Romaine

    2013-06-01

    Malrotation with a common mesentery is the classical pathology allowing midgut volvulus to occur. There are only a few reports of small bowel volvulus without malrotation or other pathology triggering volvulation. We describe three cases of small bowel volvulus in very premature newborns with a perfectly normal intra-abdominal anatomy and focus on the question, what might have set off volvulation. In 2005 to 2008, three patients developed small bowel volvulus without any underlying pathology. Retrospective patient chart review was performed with special focus on clinical presentation, preoperative management, intraoperative findings, and potential causative explanations. Mean follow-up period was 46 months. All patients were born between 27 and 31 weeks (mean 28 weeks) with a birth weight between 800 and 1,000 g (mean 887 g). They presented with an almost identical pattern of symptoms including sudden abdominal distension, abdominal tenderness, erythema of the abdominal wall, high gastric residuals, and radiographic signs of ileus. All of them were treated with intensive abdominal massage or pelvic rotation to improve bowel movement before becoming symptomatic. Properistaltic maneuvers including abdominal massage and pelvic rotation may cause what we term a "manufactured" volvulus in very premature newborns. Thus, this practice was stopped. Georg Thieme Verlag KG Stuttgart · New York.

  3. Development of semiconductor electronics

    International Nuclear Information System (INIS)

    Bardeen, John.

    1977-01-01

    In 1931, Wilson applied Block's theory about the energy bands for the motion of electrons in a crystal lattice to semiconductors and showed that conduction can take place in two different ways, by electrons and by holes. Not long afterwards Frenkel showed that these carriers can flow by diffusion in a concentration gradient as well as under the influence of an electric field and wrote down equations for the current flow. The third major contribution, in the late 1930's was the explanation of rectification at a metalsemiconductor contact by Mott and more completely by Schottky. In late 1947 the first transistor of the point contact type was invented by Brattin, Shockley and Bardeen. Then after single crystals of Ge were grown, the junction transistor was developed by the same group. The first silicon transistors appeared in 1954. Then an important step was discovery of the planar transistor by Hoenri in 1960 which led to development of integrated circuits by 1962. Many transistors are produced by batch processing on a slice of silicon. Then in 1965 Mos (Metal-Oxide Semiconductor) transistor and in 1968 LSI (Large Scale Intergration circuits) were developed. Aside from electronic circuits, there are many other applications of semiconductors, including junction power rectifiers, junction luminescence (including lasers), solar batteries, radiation detectors, microwave oscillators and charged-coupled devices for computer memories and devices. One of the latest developments is a microprocessor with thousands of transistors and associated circuitry on a single small chip of silicon. It can be programmed to provide a variety of circuit functions, thus it is not necessary to go through the great expense of LSI's for each desired function, but to use standard microprocessors and program to do the job

  4. Optimization of broadband semiconductor chirped mirrors with genetic algorithm

    OpenAIRE

    Dems, M.; Wnuk, P.; Wasylczyk, P.; Zinkiewicz, L.; Wojcik-Jedlinska, A.; Reginski, K.; Hejduk, K.; Jasik, A.

    2016-01-01

    Genetic algorithm was applied for optimization of dispersion properties in semiconductor Bragg reflectors for applications in femtosecond lasers. Broadband, large negative group-delay dispersion was achieved in the optimized design: The group-delay dispersion (GDD) as large as −3500 fs2 was theoretically obtained over a 10-nm bandwidth. The designed structure was manufactured and tested, providing GDD −3320 fs2 over a 7-nm bandwidth. The mirror performance was ...

  5. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  6. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  7. Electrowetting on semiconductors

    Science.gov (United States)

    Palma, Cesar; Deegan, Robert

    2015-01-01

    Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

  8. Semiconductor ionizino. radiation detectors

    International Nuclear Information System (INIS)

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  9. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  10. The impact of fit manufacturing on green manufacturing: A review

    Science.gov (United States)

    Qi, Ang Nian; Sin, Tan Chan; Fathullah, M.; Lee, C. C.

    2017-09-01

    Fit manufacturing and Green manufacturing are a new trend principle and concept. They are getting popular in industrial. This paper is identifying the impact between Fit manufacturing and Green manufacturing. Besides Fit manufacturing, Lean manufacturing, Agile manufacturing and Sustainable manufacturing gives big impacts to Green Manufacturing. On top of that, this paper also discuss the benefits of applying Fit manufacturing and Green manufacturing in industrial as well as environment. Hence, applications of Fit manufacturing and Green Manufacturing are increasing year by year.

  11. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  12. Improvements in Operational Readiness by Distributing Manufacturing Capability in the Supply Chain through Additive Manufacturing

    Science.gov (United States)

    2017-12-01

    Second, the report presents the results of laboratory tests designed to evaluate additive manufacturing time of four repair parts. C. RESEARCH...since the production repeatability and reliability of the parts are not well understood (Merritt 2015, 9). The Army’s Additive Manufacturing ...that has a single factory that produces all of their products . This definition is expanded to include a network of manufacturing facilities where each

  13. Developments in fuel manufacturing

    International Nuclear Information System (INIS)

    Ion, S.E.; Harrop, G.; Maricalva Gonzalez, J.

    1995-01-01

    The status of the investment and R and D programmes in the UK and Spanish fuel fabrication facilities is outlined. Due to a number of circumstances, BNFL and ENUSA have been in the forefront of capital investment, with associated commitment to engineering and scientific research and development. Carrying through this investment has allowed the embodiment of proven state of the art technologies in the design of fuel fabrication plants, with particular emphasis on meeting the future challenge of health and safety, and product quality, at an acceptable cost. ENUSA and BNFL currently supply fuel, not only to their respective 'home' markets but also to France, Belgium, Sweden, and Germany. Both organisations employ an International Business outlook and partake in focused and speculative R and D projects for the design and manufacture of nuclear fuel. (orig./HP)

  14. Advanced Manufacturing Technologies

    Science.gov (United States)

    Fikes, John

    2016-01-01

    Advanced Manufacturing Technologies (AMT) is developing and maturing innovative and advanced manufacturing technologies that will enable more capable and lower-cost spacecraft, launch vehicles and infrastructure to enable exploration missions. The technologies will utilize cutting edge materials and emerging capabilities including metallic processes, additive manufacturing, composites, and digital manufacturing. The AMT project supports the National Manufacturing Initiative involving collaboration with other government agencies.

  15. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  16. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  17. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  18. Semiconductor photocatalysis principles and applications

    CERN Document Server

    Kisch, Horst

    2014-01-01

    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  19. Progress in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Walton, J.; Gatti, E.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

  20. Semiconductor materials and their properties

    NARCIS (Netherlands)

    Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

    2017-01-01

    Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

  1. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  2. Terahertz Nonlinear Optics in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

  3. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  4. Auditing radiation sterilization facilities

    Science.gov (United States)

    Beck, Jeffrey A.

    The diversity of radiation sterilization systems available today places renewed emphasis on the need for thorough Quality Assurance audits of these facilities. Evaluating compliance with Good Manufacturing Practices is an obvious requirement, but an effective audit must also evaluate installation and performance qualification programs (validation_, and process control and monitoring procedures in detail. The present paper describes general standards that radiation sterilization operations should meet in each of these key areas, and provides basic guidance for conducting QA audits of these facilities.

  5. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  6. Manufacturing a submicron structure using a liquid precursor

    NARCIS (Netherlands)

    Ishihara, R.; Van de Zwan, M.; Trifunovic, M.

    2014-01-01

    Methods for manufacture of a submicron semiconductor structure on a substrate are described. The method may comprise: forming at least one template layer over a support substrate; forming one or more template structures, preferably one or more recesses and/or mesas, in said template layer, said one

  7. 21 CFR 606.40 - Facilities.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 7 2010-04-01 2010-04-01 false Facilities. 606.40 Section 606.40 Food and Drugs... GOOD MANUFACTURING PRACTICE FOR BLOOD AND BLOOD COMPONENTS Plant and Facilities § 606.40 Facilities. Facilities shall be maintained in a clean and orderly manner, and shall be of suitable size, construction and...

  8. Progress on ANSTO'S OPAL reactor project and its future importance as the centrepiece of ANSTO'S facilities

    International Nuclear Information System (INIS)

    Smith, I.O.

    2006-01-01

    Full text: After an intensive process of analysis, the Australian government approved the construction of a multi-purpose research reactor in 1997. Following the conduct of a comprehensive tender evaluation process in 1998-2000, INVAP was contracted to construct a 20 MW open pool research reactor and associated neutron beam facilities. The construction of the reactor is now almost complete, and we have commenced cold commissioning. ANSTO has applied for an operating licence, and we hope for a decision on that application in June, following the consideration by the regulator of the results of cold commissioning. The OPAL reactor will provide neutrons to a world-class neutron beam facility, in which a number of the instruments will have the best performance available in the world to date. We intend to establish the Bragg Institute as a regional centre of excellence on neutron beam science, with a significant number of international scientists using the facility to produce cutting edge science in the fields of biology, materials science, food science and other area. The reactor also has extensive irradiation facilities within the reflector vessel. These facilities will be used to produce medical isotopes - ANSTO supplies the bulk of the Australian market and also exports into this region - and for the transmutation doping of silicon ingots for semiconductor manufacture. There are also a number of pneumatically loaded radiation facilities allowing for short term irradiation of samples for such activities as neutron activation analysis

  9. Neutron and gamma irradiation effects on power semiconductor switches

    Science.gov (United States)

    Schwarze, G. E.; Frasca, A. J.

    1990-01-01

    The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

  10. Neutron and gamma irradiation effects on power semiconductor switches

    International Nuclear Information System (INIS)

    Schwarze, G.E.; Frasca, A.J.

    1990-01-01

    The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN bipolar junction transistors (BJTs), and metal-oxide-semiconductor field effect transistors (MOSFETs)

  11. Tribology in Manufacturing Technology

    CERN Document Server

    2013-01-01

    The present book aims to provide research advances on tribology in manufacturing technology for modern industry. This book can be used as a research book for final undergraduate engineering course (for example, mechanical, manufacturing, materials, etc) or as a subject on manufacturing at the postgraduate level. Also, this book can serve as a useful reference for academics, manufacturing and tribology researchers, mechanical, mechanical, manufacturing and materials engineers, professionals in related industries with manufacturing and tribology.

  12. Semiconductor radiation detector

    Science.gov (United States)

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  13. Semiconductor testing method

    International Nuclear Information System (INIS)

    Brown, Stephen.

    1992-01-01

    In a method of avoiding use of nuclear radiation, eg gamma rays, X-rays, electron beams, for testing semiconductor components for resistance to hard radiation, which hard radiation causes data corruption in some memory devices and 'latch-up' in others, similar fault effects can be achieved using a xenon or other 'light' flash gun even though the penetration of light is significantly less than that of gamma rays. The method involves treating a device with gamma radiation, measuring a particular fault current at the onset of a fault event, repeating the test with light to confirm the occurrence of the fault event at the same measured fault current, and using the fault current value as a reference for future tests using light on similar devices. (author)

  14. Radial semiconductor drift chambers

    International Nuclear Information System (INIS)

    Rawlings, K.J.

    1987-01-01

    The conditions under which the energy resolution of a radial semiconductor drift chamber based detector system becomes dominated by the step noise from the detector dark current have been investigated. To minimise the drift chamber dark current attention should be paid to carrier generation at Si/SiO 2 interfaces. This consideration conflicts with the desire to reduce the signal risetime: a higher drift field for shorter signal pulses requires a larger area of SiO 2 . Calculations for the single shaping and pseudo Gaussian passive filters indicate that for the same degree of signal risetime sensitivity in a system dominated by the step noise from the detector dark current, the pseudo Gaussian filter gives only a 3% improvement in signal/noise and 12% improvement in rate capability compared with the single shaper performance. (orig.)

  15. Energy distribution in semiconductors

    International Nuclear Information System (INIS)

    Ance, C.

    1979-01-01

    For various semiconductors the dispersive energy Esub(d) defined in the Wemple-Didomenico model is connected with the covalent and ionic energies Esub(h) and C. A continuous curve of ionicity against the ratio of the two energies Esub(A) and Esub(B), connected to Esub(h) and C is reported. Afromowitz's model is applied to the ternary compounds Gasub(1-x)Alsub(x)Sb using optical decomposition. From these results the average energy gap Esub(g) is given by Esub(g) = D 0 M 0 sup((IB))/(epsilon 1 (0)-1) where M 0 sup((IB)) is the interband transition contribution to the optical moment M 0 . (author)

  16. Organic Semiconductor Photovoltaics

    Science.gov (United States)

    Sariciftci, Niyazi Serdar

    2005-03-01

    Recent developments on organic photovoltaic elements are reviewed. Semiconducting conjugated polymers and molecules as well as nanocrystalline inorganic semiconductors are used in composite thin films. The photophysics of such photoactive devices is based on the photoinduced charge transfer from donor type semiconducting molecules onto acceptor type molecules such as Buckminsterfullerene, C60 and/or nanoparticles. Similar to the first steps in natural photosynthesis, this photoinduced electron transfer leads to a number of potentially interesting applications which include sensitization of the photoconductivity and photovoltaic phenomena. Examples of photovoltaic architectures are discussed with their potential in terrestrial solar energy conversion. Several materials are introduced and discussed for their photovoltaic activities. Furthermore, nanomorphology has been investigated with AFM, SEM and TEM. The morphology/property relationship for a given photoactive system is found to be a major effect.

  17. Submillimeter Spectroscopic Study of Semiconductor Processing Plasmas

    Science.gov (United States)

    Helal, Yaser H.

    Plasmas used for manufacturing processes of semiconductor devices are complex and challenging to characterize. The development and improvement of plasma processes and models rely on feedback from experimental measurements. Current diagnostic methods are not capable of measuring absolute densities of plasma species with high resolution without altering the plasma, or without input from other measurements. At pressures below 100 mTorr, spectroscopic measurements of rotational transitions in the submillimeter/terahertz (SMM) spectral region are narrow enough in relation to the sparsity of spectral lines that absolute specificity of measurement is possible. The frequency resolution of SMM sources is such that spectral absorption features can be fully resolved. Processing plasmas are a similar pressure and temperature to the environment used to study astrophysical species in the SMM spectral region. Many of the molecular neutrals, radicals, and ions present in processing plasmas have been studied in the laboratory and their absorption spectra have been cataloged or are in the literature for the purpose of astrophysical study. Recent developments in SMM devices have made its technology commercially available for applications outside of specialized laboratories. The methods developed over several decades in the SMM spectral region for these laboratory studies are directly applicable for diagnostic measurements in the semiconductor manufacturing industry. In this work, a continuous wave, intensity calibrated SMM absorption spectrometer was developed as a remote sensor of gas and plasma species. A major advantage of intensity calibrated rotational absorption spectroscopy is its ability to determine absolute concentrations and temperatures of plasma species from first principles without altering the plasma environment. An important part of this work was the design of the optical components which couple 500 - 750 GHz radiation through a commercial inductively coupled plasma

  18. Utility of Big Area Additive Manufacturing (BAAM) For The Rapid Manufacture of Customized Electric Vehicles

    Energy Technology Data Exchange (ETDEWEB)

    Love, Lonnie J [ORNL

    2015-08-01

    This Oak Ridge National Laboratory (ORNL) Manufacturing Development Facility (MDF) technical collaboration project was conducted in two phases as a CRADA with Local Motors Inc. Phase 1 was previously reported as Advanced Manufacturing of Complex Cyber Mechanical Devices through Community Engagement and Micro-manufacturing and demonstrated the integration of components onto a prototype body part for a vehicle. Phase 2 was reported as Utility of Big Area Additive Manufacturing (BAAM) for the Rapid Manufacture of Customized Electric Vehicles and demonstrated the high profile live printing of an all-electric vehicle using ONRL s Big Area Additive Manufacturing (BAAM) technology. This demonstration generated considerable national attention and successfully demonstrated the capabilities of the BAAM system as developed by ORNL and Cincinnati, Inc. and the feasibility of additive manufacturing of a full scale electric vehicle as envisioned by the CRADA partner Local Motors, Inc.

  19. Agile Multi-Parallel Micro Manufacturing Using a Grid of Equiplets

    NARCIS (Netherlands)

    Leo van Moergestel; Ing. Erik Puik

    2010-01-01

    Abstract: Unlike manufacturing technology for semiconductors and printed circuit boards, the market for traditional micro assembly lacks a clear public roadmap. More agile manufacturing strategies are needed in an environment in which dealing with change becomes a rule instead of an exception. In

  20. Magnetic excitations in ferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

    2009-01-01

    Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

  1. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  2. Simulation Environment Synchronizing Real Equipment for Manufacturing Cell

    Science.gov (United States)

    Inukai, Toshihiro; Hibino, Hironori; Fukuda, Yoshiro

    Recently, manufacturing industries face various problems such as shorter product life cycle, more diversified customer needs. In this situation, it is very important to reduce lead-time of manufacturing system constructions. At the manufacturing system implementation stage, it is important to make and evaluate facility control programs for a manufacturing cell, such as ladder programs for programmable logical controllers (PLCs) rapidly. However, before the manufacturing systems are implemented, methods to evaluate the facility control programs for the equipment while mixing and synchronizing real equipment and virtual factory models on the computers have not been developed. This difficulty is caused by the complexity of the manufacturing system composed of a great variety of equipment, and stopped precise and rapid support of a manufacturing engineering process. In this paper, a manufacturing engineering environment (MEE) to support manufacturing engineering processes using simulation technologies is proposed. MEE consists of a manufacturing cell simulation environment (MCSE) and a distributed simulation environment (DSE). MCSE, which consists of a manufacturing cell simulator and a soft-wiring system, is emphatically proposed in detail. MCSE realizes making and evaluating facility control programs by using virtual factory models on computers before manufacturing systems are implemented.

  3. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1990-01-01

    The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

  4. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

  5. Semiconductor device comprising a pn-heterojunction

    NARCIS (Netherlands)

    2007-01-01

    An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

  6. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  7. A product-process approach for development of the manufacturing footprint

    DEFF Research Database (Denmark)

    Farooq, Sami; Yang, Cheng; Johansen, John

    2009-01-01

    to ever changing global business environment there are certain other external factors that act as drivers for the manufacturing facility development process and therefore should be given considerable importance as they play a major role in defining the future footprint of a manufacturing organisation....... elaborating the development and establishment of various manufacturing facilities of a Danish pump manufacturer is then described. The discussion from the case leads to the conclusion that developing new manufacturing facilities can be explained using existing theories of manufacturing strategy. However due...

  8. Selective, electrochemical etching of a semiconductor

    Science.gov (United States)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  9. Integrated computer aided design simulation and manufacture

    OpenAIRE

    Diko, Faek

    1989-01-01

    Computer Aided Design (CAD) and Computer Aided Manufacture (CAM) have been investigated and developed since twenty years as standalone systems. A large number of very powerful but independent packages have been developed for Computer Aided Design,Aanlysis and Manufacture. However, in most cases these packages have poor facility for communicating with other packages. Recently attempts have been made to develop integrated CAD/CAM systems and many software companies a...

  10. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  11. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  12. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  13. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  14. Semiconductor technology program. Progress briefs

    Science.gov (United States)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  15. Semiconductor radiation detectors. Device physics

    International Nuclear Information System (INIS)

    Lutz, G.

    2007-01-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  16. Self-assembling peptide semiconductors

    Science.gov (United States)

    Tao, Kai; Makam, Pandeeswar; Aizen, Ruth; Gazit, Ehud

    2017-01-01

    Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems. PMID:29146781

  17. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  18. 78 FR 9884 - Approval of Subzone Status; Zimmer Manufacturing BV; Ponce, Puerto Rico

    Science.gov (United States)

    2013-02-12

    ...; Zimmer Manufacturing BV; Ponce, Puerto Rico Pursuant to its authority under the Foreign-Trade Zones Act... subzone at the facility of Zimmer Manufacturing BV located in Ponce, Puerto Rico (FTZ Docket B-81-2012... hereby approves subzone status at the facility of Zimmer Manufacturing BV located in Ponce, Puerto Rico...

  19. Manufacturing network evolution

    DEFF Research Database (Denmark)

    Yang, Cheng; Farooq, Sami; Johansen, John

    2011-01-01

    Purpose – This paper examines the effect of changes at the manufacturing plant level on other plants in the manufacturing network and also investigates the role of manufacturing plants on the evolution of a manufacturing network. Design/methodology/approach –The research questions are developed...... different manufacturing plants in the network and their impact on network transformation. Findings – The paper highlights the dominant role of manufacturing plants in the continuously changing shape of a manufacturing network. The paper demonstrates that a product or process change at one manufacturing...... by identifying the gaps in the reviewed literature. The paper is based on three case studies undertaken in Danish manufacturing companies to explore in detail their manufacturing plants and networks. The cases provide a sound basis for developing the research questions and explaining the interaction between...

  20. Wake fields in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1994-05-01

    It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

  1. Semiconductor research with reactor neutrons

    International Nuclear Information System (INIS)

    Kimura, Itsuro

    1992-01-01

    Reactor neutrons play an important role for characterization of semiconductor materials as same as other advanced materials. On the other hand reactor neutrons bring about not only malignant irradiation effects called radiation damage, but also useful effects such as neutron transmutation doping and defect formation for opto-electronics. Research works on semiconductor materials with the reactor neutrons of the Kyoto University Reactor (KUR) are briefly reviewed. In this review, a stress is laid on the present author's works. (author)

  2. Semiconductor crystal high resolution imager

    Science.gov (United States)

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  3. Dissipative chaos in semiconductor superlattices

    Directory of Open Access Journals (Sweden)

    F. Moghadam

    2008-03-01

    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  4. Flexible, Photopatterned, Colloidal CdSe Semiconductor Nanocrystal Integrated Circuits

    Science.gov (United States)

    Stinner, F. Scott

    As semiconductor manufacturing pushes towards smaller and faster transistors, a parallel goal exists to create transistors which are not nearly as small. These transistors are not intended to match the performance of traditional crystalline semiconductors; they are designed to be significantly lower in cost and manufactured using methods that can make them physically flexible for applications where form is more important than speed. One of the developing technologies for this application is semiconductor nanocrystals. We first explore methods to develop CdSe nanocrystal semiconducting "inks" into large-scale, high-speed integrated circuits. We demonstrate photopatterned transistors with mobilities of 10 cm2/Vs on Kapton substrates. We develop new methods for vertical interconnect access holes to demonstrate multi-device integrated circuits including inverting amplifiers with 7 kHz bandwidths, ring oscillators with NFC) link. The device draws its power from the NFC transmitter common on smartphones and eliminates the need for a fixed battery. This allows for the mass deployment of flexible, interactive displays on product packaging.

  5. Reducing leakage current in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

    2018-03-06

    A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

  6. Optical orientation in ferromagnet/semiconductor hybrids

    International Nuclear Information System (INIS)

    Korenev, V L

    2008-01-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

  7. Optical orientation in ferromagnet/semiconductor hybrids

    Science.gov (United States)

    Korenev, V. L.

    2008-11-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

  8. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    OpenAIRE

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  9. Automatic Semiconductor Wafer Image Segmentation for Defect Detection Using Multilevel Thresholding

    Directory of Open Access Journals (Sweden)

    Saad N.H.

    2016-01-01

    Full Text Available Quality control is one of important process in semiconductor manufacturing. A lot of issues trying to be solved in semiconductor manufacturing industry regarding the rate of production with respect to time. In most semiconductor assemblies, a lot of wafers from various processes in semiconductor wafer manufacturing need to be inspected manually using human experts and this process required full concentration of the operators. This human inspection procedure, however, is time consuming and highly subjective. In order to overcome this problem, implementation of machine vision will be the best solution. This paper presents automatic defect segmentation of semiconductor wafer image based on multilevel thresholding algorithm which can be further adopted in machine vision system. In this work, the defect image which is in RGB image at first is converted to the gray scale image. Median filtering then is implemented to enhance the gray scale image. Then the modified multilevel thresholding algorithm is performed to the enhanced image. The algorithm worked in three main stages which are determination of the peak location of the histogram, segmentation the histogram between the peak and determination of first global minimum of histogram that correspond to the threshold value of the image. The proposed approach is being evaluated using defected wafer images. The experimental results shown that it can be used to segment the defect correctly and outperformed other thresholding technique such as Otsu and iterative thresholding.

  10. 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics

    CERN Document Server

    Li, Simon

    2012-01-01

    Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD.  This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D.  It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations.  Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc. Provides a vivid, internal view of semiconductor devices, through 3D TCAD simulation; Includes comprehensive coverage of  TCAD simulations for both optic and electronic devices, from nano-scale to high-voltage high-power devices; Presents material in a hands-on, tutorial fashion so that industry practitioners will find maximum utility; Includes a comprehensive library of devices, re...

  11. Semiconductors for plasmonics and metamaterials

    DEFF Research Database (Denmark)

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

  12. Ripening of Semiconductor Nanoplatelets.

    Science.gov (United States)

    Ott, Florian D; Riedinger, Andreas; Ochsenbein, David R; Knüsel, Philippe N; Erwin, Steven C; Mazzotti, Marco; Norris, David J

    2017-11-08

    Ostwald ripening describes how the size distribution of colloidal particles evolves with time due to thermodynamic driving forces. Typically, small particles shrink and provide material to larger particles, which leads to size defocusing. Semiconductor nanoplatelets, thin quasi-two-dimensional (2D) particles with thicknesses of only a few atomic layers but larger lateral dimensions, offer a unique system to investigate this phenomenon. Experiments show that the distribution of nanoplatelet thicknesses does not defocus during ripening, but instead jumps sequentially from m to (m + 1) monolayers, allowing precise thickness control. We investigate how this counterintuitive process occurs in CdSe nanoplatelets. We develop a microscopic model that treats the kinetics and thermodynamics of attachment and detachment of monomers as a function of their concentration. We then simulate the growth process from nucleation through ripening. For a given thickness, we observe Ostwald ripening in the lateral direction, but none perpendicular. Thicker populations arise instead from nuclei that capture material from thinner nanoplatelets as they dissolve laterally. Optical experiments that attempt to track the thickness and lateral extent of nanoplatelets during ripening appear consistent with these conclusions. Understanding such effects can lead to better synthetic control, enabling further exploration of quasi-2D nanomaterials.

  13. A semiconductor laser device

    Energy Technology Data Exchange (ETDEWEB)

    Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

    1984-03-17

    A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

  14. Semiconductor integrated circuits

    International Nuclear Information System (INIS)

    Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

    1979-01-01

    An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

  15. Impurity gettering in semiconductors

    Science.gov (United States)

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  16. Semiconductor acceleration sensor

    Science.gov (United States)

    Ueyanagi, Katsumichi; Kobayashi, Mitsuo; Goto, Tomoaki

    1996-09-01

    This paper reports a practical semiconductor acceleration sensor especially suited for automotive air bag systems. The acceleration sensor includes four beams arranged in a swastika structure. Two piezoresistors are formed on each beam. These eight piezoresistors constitute a Wheatstone bridge. The swastika structure of the sensing elements, an upper glass plate and a lower glass plate exhibit the squeeze film effect which enhances air dumping, by which the constituent silicon is prevented from breakdown. The present acceleration sensor has the following features. The acceleration force component perpendicular to the sensing direction can be cancelled. The cross-axis sensitivity is less than 3 percent. And, the erroneous offset caused by the differences between the thermal expansion coefficients of the constituent materials can be canceled. The high aspect ratio configuration realized by plasma etching facilitates reducing the dimensions and improving the sensitivity of the acceleration sensor. The present acceleration sensor is 3.9 mm by 3.9 mm in area and 1.2 mm in thickness. The present acceleration sensor can measure from -50 to +50 G with sensitivity of 0.275 mV/G and with non-linearity of less than 1 percent. The acceleration sensor withstands shock of 3000 G.

  17. Technological assessment of local manufacturers for wind turbine blade manufacturing in Pakistan

    Science.gov (United States)

    Mahmood, Khurram; Haroon, General

    2012-11-01

    Composite materials manufacturing industry is one of the world's hi-tech industry. Manufacturing of wind turbine blades is one of the specialized fields requiring high degree of precision and composite manufacturing techniques. This paper identifies the industries specializing in the composite manufacturing and is able to manufacture wind turbines blades in Pakistan. In the second phase, their technology readiness level is determined, based on some factors and then a readiness level are assigned to them. The assigned technology readiness level will depict the absorptive capacity of each manufacturing unit and its capability to take on such projects. The individual readiness level of manufacturing unit will then be used to establish combined technology readiness level of Pakistan particularly for wind turbine blades manufacturing. The composite manufacturing industry provides many spin offs and a diverse range of products can be manufactured using this facility. This research will be helpful to categorize the strong points and flaws of local industry for the gap analysis. It can also be used as a prerequisite study before the evaluation of technologies and specialties to improve the industry of the country for the most favorable results. This will form a basic data base which can be used for the decision making related to transfer of technology, training of local skilled workers and general up-gradation of the local manufacturing units.

  18. Robotics In Manufacturing: Army View

    Science.gov (United States)

    Michel, F. J.

    1983-05-01

    (Figure 1) This is an outline of my presentation today. The U. S. Army has a dual interest in the use of robots, namely: 1. As a substitute for or an extension of the soldier in the battlefield, and 2. in the factories that make Army materiel, or - as we call it -the the production base. The Production Base can again be divided into three separate segments, i.e., the Army owned and operated facilities or GOG6s, such as Rock Island and Watervliet arsenals, and not to be overlooked, the depot operations. There the Army manufactures gun tubes and other related parts for artillery weapons and repairs and overhauls them. A second category is the Army owned and contractor operated facilities or GOCOs,such as the ammunition plants, the tank plants at Lima, Ohio and Warren, Michigan and the Stratford Engine Plant in Connecticut where gas turbines for helicopter and the Abrams tank are manufactured. The last category covers the industrial base, that is those factories which are not only operated but also owned by the contractor himself also referred to as COCOs. You can see from this description that the Army is supported by a base which produces a diversified line of products. Therefore, the task of technology development and technology insertion is considerably more complex than what one encounters in the average U. S. Manufacturing organization.

  19. Low Cost Lithography Tool for High Brightness LED Manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Andrew Hawryluk; Emily True

    2012-06-30

    The objective of this activity was to address the need for improved manufacturing tools for LEDs. Improvements include lower cost (both capital equipment cost reductions and cost-ofownership reductions), better automation and better yields. To meet the DOE objective of $1- 2/kilolumen, it will be necessary to develop these highly automated manufacturing tools. Lithography is used extensively in the fabrication of high-brightness LEDs, but the tools used to date are not scalable to high-volume manufacturing. This activity addressed the LED lithography process. During R&D and low volume manufacturing, most LED companies use contact-printers. However, several industries have shown that these printers are incompatible with high volume manufacturing and the LED industry needs to evolve to projection steppers. The need for projection lithography tools for LED manufacturing is identified in the Solid State Lighting Manufacturing Roadmap Draft, June 2009. The Roadmap states that Projection tools are needed by 2011. This work will modify a stepper, originally designed for semiconductor manufacturing, for use in LED manufacturing. This work addresses improvements to yield, material handling, automation and throughput for LED manufacturing while reducing the capital equipment cost.

  20. Hydrogen manufacturing using plasma reformers

    Energy Technology Data Exchange (ETDEWEB)

    Bromberg, L.; Cohn, D.R.; Rabinovich, A.; Hochgreb, S.; O`Brien, C. [Massachusetts Institute of Technology, Cambridge, MA (United States)

    1996-10-01

    Manufacturing of hydrogen from hydrocarbon fuels is needed for a variety of applications. These applications include fuel cells used in stationary electric power production and in vehicular propulsion. Hydrogen can also be used for various combustion engine systems. There is a wide range of requirements on the capacity of the hydrogen manufacturing system, the purity of the hydrogen fuel, and capability for rapid response. The overall objectives of a hydrogen manufacturing facility are to operate with high availability at the lowest possible cost and to have minimal adverse environmental impact. Plasma technology has potential to significantly alleviate shortcomings of conventional means of manufacturing hydrogen. These shortcomings include cost and deterioration of catalysts; limitations on hydrogen production from heavy hydrocarbons; limitations on rapid response; and size and weight requirements. In addition, use of plasma technology could provide for a greater variety of operating modes; in particular the possibility of virtual elimination of CO{sub 2} production by pyrolytic operation. This mode of hydrogen production may be of increasing importance due to recent additional evidence of global warming.

  1. Applications of Nuclear Reaction Analysis for Semiconductor Industry

    International Nuclear Information System (INIS)

    Wei Luncun

    2003-01-01

    Many thin film samples used in the semiconductor industry contain C, N and O. The detection limits and accuracy obtained by Rutherford Backscattering Spectroscopy (RBS) measurement are limited due to the small cross section values. High energy non-Rutherford backscattering is often used to enhance the sensitivities. But non-Rutherford cross section values are irregular and can not be calculated as normal Rutherford backscattering values. It is also difficult to find an appropriate energy window that for all these elements, and high-energy ions are needed. In this paper, the Nuclear Reaction Analysis (NRA) method is used to simultaneously measure C, N and O. several applications in the semiconductor research, development, and manufacturing areas are presented

  2. Multi-analytical study of historical semiconductor pigments

    International Nuclear Information System (INIS)

    Caporosso, V.

    2015-01-01

    This work is focused on the study of semiconductor-based pigments, which substituted traditional pigments in the second half of the 19. century. Synthetic semiconductor pigments may be chemically unstable due to the presence of many impurities unintentionally introduced during manufacturing. The aim of this work is to provide an insight on the application of X-ray Fluorescence (XRF) for the analysis of these painting materials, including both Cd- and Zn-based pigments. Three different approaches have been followed: the semi-quantitative analysis of samples with similar elemental composition, the complementary use of XRF and Raman spectroscopy for the analysis of elemental and molecular composition and the synchrotron-based XRF and XANES for the detection of impurities. The synergetic combination of different techniques provides information useful for the definition of specific markers for future analysis of paint-samples with implications for the conservation and treatment of late 19. and early 20. century paintings.

  3. Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

    CERN Document Server

    Pearton, Stephen

    2013-01-01

    Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and ...

  4. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  5. Surrogate Plant Data Base : Volume 4. Appendix E : Medium and Heavy Truck Manufacturing

    Science.gov (United States)

    1983-05-01

    This four volume report consists of a data base describing "surrogate" automobile and truck manufacturing plants developed as part of a methodology for evaluating capital investment requirements in new manufacturing facilities to build new fleets of ...

  6. 21 CFR 1271.190 - Facilities.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Facilities. 1271.190 Section 1271.190 Food and... CELLULAR AND TISSUE-BASED PRODUCTS Current Good Tissue Practice § 1271.190 Facilities. (a) General. Any facility used in the manufacture of HCT/Ps must be of suitable size, construction, and location to prevent...

  7. Appraising manufacturing location

    NARCIS (Netherlands)

    Steenhuis, H.J.; de Bruijn, E.J.

    2002-01-01

    International location of manufacturing activities is an issue for managers of manufacturing companies as well as public policy makers. For managers, the issue is relevant because international locations offer opportunities for lowering costs due to productivity improvements. For governments the

  8. Manufacturing engineering and technology

    CERN Document Server

    Kalpakjian, Serope; Vijai Sekar, K S

    2014-01-01

    For courses in manufacturing processes at two- or four-year schools. An up-to-date text that provides a solid background in manufacturing processes. Manufacturing Engineering and Technology, SI Edition, 7e, presents a mostly qualitative description of the science, technology, and practice of manufacturing. This includes detailed descriptions of manufacturing processes and the manufacturing enterprise that will help introduce students to important concepts. With a total of 120 examples and case studies, up-to-date and comprehensive coverage of all topics, and superior two-color graphics, this text provides a solid background for manufacturing students and serves as a valuable reference text for professionals. Teaching and Learning Experience To provide a better teaching and learning experience, for both instructors and students, this program will: * Apply Theory and/or Research: An excellent overview of manufacturing conceptswith a balance of relevant fundamentals and real-world practices. * Engage Students: E...

  9. Semiconductor optoelectronic infrared spectroscopy

    International Nuclear Information System (INIS)

    Hollingworth, A.R.

    2001-08-01

    We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

  10. Simulation of semiconductor devices

    International Nuclear Information System (INIS)

    Oriato, D.

    2001-09-01

    In this thesis a drift diffusion model coupled with self-consistent solutions of Poisson's and Schroedinger's equations, is developed and used to investigate the operation of Gunn diodes and GaN-based LEDs. The model also includes parameters derived from Monte Carlo calculations of the simulated devices. In this way the characteristics of a Monte Carlo approach and of a quantum solver are built into a fast and flexible drift-diffusion model that can be used for testing a large number of heterostructure designs in a time-effective way. The full model and its numerical implementation are described in chapter 2. In chapter 3 the theory of Gunn diodes is presented. A basic model of the dynamics of domain formation and domain transport is described with particular regard to accumulation and dipole domains. Several modes of operation of the Gunn device are described, varying from the resonance mode to the quenched mode. Details about transferred electron devices and negative differential resistance in semiconductor materials are given. In chapter 4 results from the simulation of a simple conventional gunn device confirm the importance of the doping condition at the cathode. Accumulation or dipole domains are achieved respectively with high and low doping densities. The limits of a conventional Gunn diode are explained and solved by introducing the heterostructure Gunn diode. This new design consists of a conventional GaAs transit region coupled with an electron launcher at the cathode, made using an AIGaAs heterostructure step. Simulations show the importance of the insertion of a thin highly-doped layer between the transit region and the electron launcher in order to improve device operation. Chapter 5 is an introduction to Ill-nitrides, in particular GaN and its alloy ln-GaN. We outline the discrepancy in the elastic and piezoelectric parameters found in the literature. Strain, dislocations and piezoelectricity are presented as the main features of a InGaN/GaN system

  11. Additive Manufacturing Infrared Inspection

    Science.gov (United States)

    Gaddy, Darrell; Nettles, Mindy

    2015-01-01

    The Additive Manufacturing Infrared Inspection Task started the development of a real-time dimensional inspection technique and digital quality record for the additive manufacturing process using infrared camera imaging and processing techniques. This project will benefit additive manufacturing by providing real-time inspection of internal geometry that is not currently possible and reduce the time and cost of additive manufactured parts with automated real-time dimensional inspections which deletes post-production inspections.

  12. Manufacturing of nuclear power components in CDM

    International Nuclear Information System (INIS)

    Krishnan, J.; Jawale, S.B.

    2002-01-01

    Full text: In the nuclear research programme in India, Dr. H.J. Bhabha, the architecture of the Indian Nuclear programme felt a need for proto-type development and precision manufacturing facility to fulfill the requirements of mechanical components in establishing the manufacturing capability for the successful and self sustained nuclear programme. Centre for Design and Manufacture (CDM) hitherto known as CWS was established in 1964 to cater to the specific requirements of DAE and other associated units like ISRO, DRDO. Since then CDM has made multiple technological achievements and changes towards high quality products. The acquisition of up-to-date machines during High-Tech facility under VIII Plan project and Advance Precision Fabrication facility under IX Plan project has changed the capability of CDM towards CAD, CAM, CAE and CNC machining centres. Considering the rapid growth in the design and manufacturing, it was renamed as Centre for Design and Manufacture in March 2002, with the mission of quality output through group effort and team work

  13. High pressure semiconductor physics I

    CERN Document Server

    Willardson, R K; Paul, William; Suski, Tadeusz

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tra...

  14. Introduction to cathodoluminescence in semiconductors

    International Nuclear Information System (INIS)

    Dussac, M.

    1985-01-01

    The use of cathodoluminescence in a scanning electron microscope leads to acquire a spectrum in a place of the sample surface, or to register the intensity profile of a special emission band along a scanning line, or also to realize a map of the irradiated sample. Composition variations can then, at ambient temperature, be determined, also defects can be shown, together with grain joints and dislocations, radiative and non radiative regions can be distinguished and, at low temperature, elementary processes of luminescence can be studied and impurities identified in semiconductors. Through this analysis method is applicable to every insulating or semiconductor material (that is to say to every material having a gap), in this article only crystalline semi-conductor will be studied [fr

  15. Catalysts, Protection Layers, and Semiconductors

    DEFF Research Database (Denmark)

    Chorkendorff, Ib

    2015-01-01

    Hydrogen is the simplest solar fuel to produce and in this presentation we shall give a short overview of the pros and cons of various tandem devices [1]. The large band gap semiconductor needs to be in front, but apart from that we can chose to have either the anode in front or back using either...... acid or alkaline conditions. Since most relevant semiconductors are very prone to corrosion the advantage of using buried junctions and using protection layers offering shall be discussed [2-4]. Next we shall discuss the availability of various catalysts for being coupled to these protections layers...... and how their stability may be evaluated [5, 6]. Examples of half-cell reaction using protection layers for both cathode and anode will be discussed though some of recent examples under both alkaline and acidic conditions. Si is a very good low band gap semiconductor and by using TiO2 as a protection...

  16. High mobility emissive organic semiconductor

    Science.gov (United States)

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

  17. Thiophene-Based Organic Semiconductors.

    Science.gov (United States)

    Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

    2017-10-24

    Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

  18. Facilities & Leadership

    Data.gov (United States)

    Department of Veterans Affairs — The facilities web service provides VA facility information. The VA facilities locator is a feature that is available across the enterprise, on any webpage, for the...

  19. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  20. Wide gap semiconductor microwave devices

    International Nuclear Information System (INIS)

    Buniatyan, V V; Aroutiounian, V M

    2007-01-01

    A review of properties of wide gap semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, GaN and AlGaN/GaN that are relevant to electronic, optoelectronic and microwave applications is presented. We discuss the latest situation and perspectives based on experimental and theoretical results obtained for wide gap semiconductor devices. Parameters are taken from the literature and from some of our theoretical works. The correspondence between theoretical results and parameters of devices is critically analysed. (review article)

  1. Detection of radioactivity by semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1991-01-01

    The class of detectors discussed in this chapter has a responsive component involving a diode, a junction between two types of semiconductor materials. Although diode detectors are not particularly efficient in counting radioactive emissions, they are superior to other commercially available detectors in spectroscopy. Consequently, diode detectors are used extensively for quanlitative purposes and for quantitative purposes when mixtures of radionuclides are present, not the usual situation with biological or medical research. Topics addressed in this chapter are as follows: Band Theory; Semiconductors and Junctions; and Radiation Detectors. 6 refs., 14 figs

  2. Modeling of semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  3. Semiconductor X-ray spectrometers

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1978-02-01

    An outline is given of recent developments in particle and photon induced x-ray fluorescence (XRF) analysis. Following a brief description of the basic mechanism of semiconductor detector operation a comparison is made between semiconductor detectors, scintillators and gas filled proportional devices. Detector fabrication and cryostat design are described in more detail and the effects of various device parameters on system performance, such as energy resolution, count rate capability, efficiency, microphony, etc. are discussed. The main applications of these detectors in x-ray fluorescence analysis, electron microprobe analysis, medical and pollution studies are reviewed

  4. Integrating magnetism into semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Zakharchenya, Boris P; Korenev, Vladimir L [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2005-06-30

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  5. Integrating magnetism into semiconductor electronics

    International Nuclear Information System (INIS)

    Zakharchenya, Boris P; Korenev, Vladimir L

    2005-01-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  6. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  7. Rapid thermal processing and beyond applications in semiconductor processing

    CERN Document Server

    Lerch, W

    2008-01-01

    Heat-treatment and thermal annealing are very common processing steps which have been employed during semiconductor manufacturing right from the beginning of integrated circuit technology. In order to minimize undesired diffusion, and other thermal budget-dependent effects, the trend has been to reduce the annealing time sharply by switching from standard furnace batch-processing (involving several hours or even days), to rapid thermal processing involving soaking times of just a few seconds. This transition from thermal equilibrium, to highly non-equilibrium, processing was very challenging a

  8. A system approach for reducing the environmental impact of manufacturing and sustainability improvement of nano-scale manufacturing

    Science.gov (United States)

    Yuan, Yingchun

    This dissertation develops an effective and economical system approach to reduce the environmental impact of manufacturing. The system approach is developed by using a process-based holistic method for upstream analysis and source reduction of the environmental impact of manufacturing. The system approach developed consists of three components of a manufacturing system: technology, energy and material, and is useful for sustainable manufacturing as it establishes a clear link between manufacturing system components and its overall sustainability performance, and provides a framework for environmental impact reductions. In this dissertation, the system approach developed is applied for environmental impact reduction of a semiconductor nano-scale manufacturing system, with three case scenarios analyzed in depth on manufacturing process improvement, clean energy supply, and toxic chemical material selection. The analysis on manufacturing process improvement is conducted on Atomic Layer Deposition of Al2O3 dielectric gate on semiconductor microelectronics devices. Sustainability performance and scale-up impact of the ALD technology in terms of environmental emissions, energy consumption, nano-waste generation and manufacturing productivity are systematically investigated and the ways to improve the sustainability of the ALD technology are successfully developed. The clean energy supply is studied using solar photovoltaic, wind, and fuel cells systems for electricity generation. Environmental savings from each clean energy supply over grid power are quantitatively analyzed, and costs for greenhouse gas reductions on each clean energy supply are comparatively studied. For toxic chemical material selection, an innovative schematic method is developed as a visual decision tool for characterizing and benchmarking the human health impact of toxic chemicals, with a case study conducted on six chemicals commonly used as solvents in semiconductor manufacturing. Reliability of

  9. Waveguide based external cavity semiconductor lasers

    NARCIS (Netherlands)

    Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

    2012-01-01

    We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

  10. Influence of phonons on semiconductor quantum emission

    Energy Technology Data Exchange (ETDEWEB)

    Feldtmann, Thomas

    2009-07-06

    A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semiconductor systems is presented. The theory is applied to study quantum dots and phonon-assisted luminescence in bulk semiconductors and heterostructures. (orig.)

  11. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  12. Fundamentals of semiconductors physics and materials properties

    CERN Document Server

    Yu, Peter Y

    2005-01-01

    Provides detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. This textbook emphasizes understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors and features an extensive collection of tables of material parameters, figures, and problems.

  13. Biochemistry Facility

    Data.gov (United States)

    Federal Laboratory Consortium — The Biochemistry Facility provides expert services and consultation in biochemical enzyme assays and protein purification. The facility currently features 1) Liquid...

  14. ACE - Manufacturer Identification Code (MID)

    Data.gov (United States)

    Department of Homeland Security — The ACE Manufacturer Identification Code (MID) application is used to track and control identifications codes for manufacturers. A manufacturer is identified on an...

  15. Space station automation study: Automation requriements derived from space manufacturing concepts,volume 2

    Science.gov (United States)

    1984-01-01

    Automation reuirements were developed for two manufacturing concepts: (1) Gallium Arsenide Electroepitaxial Crystal Production and Wafer Manufacturing Facility, and (2) Gallium Arsenide VLSI Microelectronics Chip Processing Facility. A functional overview of the ultimate design concept incoporating the two manufacturing facilities on the space station are provided. The concepts were selected to facilitate an in-depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, sensors, and artificial intelligence. While the cost-effectiveness of these facilities was not analyzed, both appear entirely feasible for the year 2000 timeframe.

  16. Nuclear radiation detection by a variband semiconductor

    International Nuclear Information System (INIS)

    Volkov, A.S.

    1981-01-01

    Possibilities of using a variband semiconductor for detecting nuclear radiations are considered. It is shown that the variaband quasielectric field effectively collects charges induced by a nuclear particle only at a small mean free path in the semiconductor (up to 100 μm), the luminescence spectrum of the variband semiconductor when a nuclear particle gets into it, in principle, permits to determine both the energy and mean free path in the semiconductor (even at large mean free paths) [ru

  17. Ultrafast THz Saturable Absorption in Doped Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, Matthias C.

    2011-01-01

    We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.......We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields....

  18. Laser semiconductor diode integrated with frequency doubler

    International Nuclear Information System (INIS)

    Tighineanu, I.; Dorogan, V.; Suruceanu, G.

    2003-01-01

    The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

  19. Diode having trenches in a semiconductor region

    Energy Technology Data Exchange (ETDEWEB)

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  20. Bio-Manufacturing to market pilot project

    Energy Technology Data Exchange (ETDEWEB)

    Dressen, Tiffaney [Univ. of California, Berkeley, CA (United States)

    2017-09-25

    The Bio-Manufacturing to Market pilot project was a part of the AMJIAC, the Advanced Manufacturing Jobs and Innovation Accelerator Challenge grant. This internship program set out to further define and enhance the talent pipeline from the University and local Community Colleges to startup culture in East Bay Area, provide undergraduate STEM students with opportunities outside academia, and provide startup companies with much needed talent. Over the 4 year period of performance, the Bio-Manufacturing to Market internship program sponsored 75 undergraduate STEM students who were able to spend anywhere from one to six semesters working with local Bay Area startup companies and DOE sponsored facilities/programs in the biotech, bio-manufacturing, and biomedical device fields.

  1. Rapsodie first core manufacture. 1. part: processing plant

    International Nuclear Information System (INIS)

    Masselot, Y.; Bataller, S.; Ganivet, M.; Guillet, H.; Robillard, A.; Stosskopf, F.

    1968-01-01

    This report is the first in a series of three describing the processes, results and peculiar technical problems related to the manufacture of the first core of the fast reactor Rapsodie. A detailed study of manufacturing processes(pellets, pins, fissile sub-assemblies), the associated testings (raw materials, processed pellets and pins, sub-assemblies before delivery), manufacturing facilities and improvements for a second campaign are described. (author) [fr

  2. CAD And Distributed Manufacturing Solutions for Pellet Boiler Producers

    Directory of Open Access Journals (Sweden)

    Timur Mamut

    2016-12-01

    Full Text Available The paper is summarizing the research activities that had been carried out for defining an appropriate manufacturing concept and the system architecture for a manufacturing plant of pellet boilers. The concept has been validated through the implementation of a solution of computer integrated manufacturing that includes a CAD platform and a CAM facility including laser cutting machines, rolling and welding machines and advanced technologies for assembly, quality control and testing.

  3. 21 CFR 120.5 - Current good manufacturing practice.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 2 2010-04-01 2010-04-01 false Current good manufacturing practice. 120.5 Section... Provisions § 120.5 Current good manufacturing practice. Part 110 of this chapter applies in determining whether the facilities, methods, practices, and controls used to process juice are safe, and whether the...

  4. 21 CFR 123.5 - Current good manufacturing practice.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 2 2010-04-01 2010-04-01 false Current good manufacturing practice. 123.5 Section...) FOOD FOR HUMAN CONSUMPTION FISH AND FISHERY PRODUCTS General Provisions § 123.5 Current good manufacturing practice. (a) Part 110 of this chapter applies in determining whether the facilities, methods...

  5. PWR heavy equipments manufacture for nuclear power plants

    International Nuclear Information System (INIS)

    Boury, C.; Terrien, J.F.

    1983-10-01

    The manufacture of boilers has been imported by the French nuclear program to the societe FRAMATOME. FRAMATOME, because of the size of this market, has constructed two special plants for manufacturing of nuclear components (vapor generators, reactor tanks, pressurizers); these two high technical facilities are presented: production, staff training, technical overseas assistance, and technical and economical repercussions on the industrial vicinity [fr

  6. Semiconductor nanostructures for infrared applications

    NARCIS (Netherlands)

    Zurauskiene, N.; Asmontas, S.; Dargys, A.; Kundrotas, J.; Janssen, G.; Goovaerts, E.; Marcinkevicius, S.; Koenraad, P.M.; Wolter, J.H.; Leon, R.

    2004-01-01

    We present the results of time-resolved photoluminescence (TRPL) and optically detected microwave resonance (ODMR) spectroscopy investigations of semiconductor quantum dots and quantum wells. The ODMR spectra of InAs/GaAs QDs were detected via modulation of the total intensity of the QDs emission

  7. A Brief History of ... Semiconductors

    Science.gov (United States)

    Jenkins, Tudor

    2005-01-01

    The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

  8. Semiconductor radiation detectors: device physics

    National Research Council Canada - National Science Library

    Lutz, Gerhard

    1999-01-01

    ..., including nuclear physics, elementary particle physics, optical and x-ray astronomy, medicine, and materials testing - and the number of applications is growing continually. Closely related, and initiated by the application of semiconductors, is the development of low-noise low-power integrated electronics for signal readout. The success of semicond...

  9. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

    2000-01-01

    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

  10. Ultrafast Spectroscopy of Semiconductor Devices

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Hvam, Jørn Marcher

    1999-01-01

    In this work we present an experimental technique for investigating ultrafast carrier dynamics in semiconductor optical amplifiers at room temperature. These dynamics, influenced by carrier heating, spectral hole-burning and two-photon absorption, are very important for device applications in inf...

  11. Radiation damage in semiconductor detectors

    International Nuclear Information System (INIS)

    Kraner, H.W.

    1981-12-01

    A survey is presented of the important damage-producing interactions in semiconductor detectors and estimates of defect numbers are made for MeV protons, neutrons and electrons. Damage effects of fast neutrons in germanium gamma ray spectrometers are given in some detail. General effects in silicon detectors are discussed and damage constants and their relationship to leakage current is introduced

  12. Microscopical Studies of Structural and Electronic Properties of Semiconductors

    CERN Multimedia

    2002-01-01

    The electronic and structural properties of point defects in semiconductors, e.g. radiation defects, impurities or passivating defects can excellently be studied by the hyperfine technique of Perturbed Angular Correlation (PAC). The serious limitation of this method, the small number of chemically different radioactive PAC probe atoms can be widely overcome by means of ISOLDE. Providing shortliving isotopes, which represent common dopants as well as suitable PAC probe atoms, the ISOLDE facility enables a much broader application of PAC to problems in semiconductor physics.\\\\ Using the probe atom $^{111m}$ Cd , the whole class of III-V compounds becomes accessible for PAC investigations. First successful experiments in GaAs, InP and GaP have been performed, concerning impurity complex formation and plasma induced defects. In Si and Ge, the electronic properties~-~especially their influence on acceptor-donor interaction~-~could be exemplarily st...

  13. Transient photoconductivity in amorphous semiconductors

    International Nuclear Information System (INIS)

    Mpawenayo, P.

    1997-07-01

    Localized states in amorphous semiconductors are divided in disorder induced shallow trap levels and dangling bonds deep states. Dangling bonds are assumed here to be either neutral or charged and their energy distribution is a single gaussian. Here, it is shown analytically that transient photocurrent in amorphous semiconductors is fully controlled by charge carriers transitions between localized states for one part and tunneling hopping carriers on the other. Localized dangling bonds deep states act as non radiative recombination centres, while hopping tunnelling is assisted by the Coulomb interaction between defects sites. The half-width of defects distribution is the disorder parameter that determines the carrier hopping time between defects sites. The macroscopic time that explains the long decay response times observed will all types of amorphous semiconductors is duly thought to be temperature dependent. Basic equations developed by Longeaud and Kleider are solved for the general case of a semiconductor after photo-generation. It turns out that the transient photoconductivity decay has two components; one with short response times from carriers trap-release transitions between shallow levels and extended states and a hopping component made of inter-dependent exponentials whose time constants span in larger ranges depending on disorder. The photoconductivity hopping component appears as an additional term to be added to photocurrents derived from existing models. The results of the present study explain and complete the power law decay derived in the multiple trapping models developed 20 years ago only in the approximation of the short response time regime. The long response time regime is described by the hopping macroscopic time. The present model is verified for all samples of amorphous semiconductors known so far. Finally, it is proposed to improved the modulated photoconductivity calculation techniques by including the long-lasting hopping dark documents

  14. 78 FR 22553 - Generic Drug Facilities, Sites, and Organizations

    Science.gov (United States)

    2013-04-16

    ...] Generic Drug Facilities, Sites, and Organizations AGENCY: Food and Drug Administration, HHS. ACTION.... Generic drug facilities, certain sites, and organizations identified in a generic drug submission are... active pharmaceutical ingredients and certain other sites and organizations that support the manufacture...

  15. Dance Facilities.

    Science.gov (United States)

    Ashton, Dudley, Ed.; Irey, Charlotte, Ed.

    This booklet represents an effort to assist teachers and administrators in the professional planning of dance facilities and equipment. Three chapters present the history of dance facilities, provide recommended dance facilities and equipment, and offer some adaptations of dance facilities and equipment, for elementary, secondary and college level…

  16. Method of manufacturing a layer thermoelectric battery. Herstellungsverfahren fuer Schichtthermobatterien

    Energy Technology Data Exchange (ETDEWEB)

    Lidorenko, N.S.; Kolomoets, N.V.; Daschevsky, Z.M.; Granovsky, V.I.; Schemtschuschina, E.A.; Chernousov, L.N.; Schmidt, I.A.; Nikolaschina, L.A.; Gelfgat, D.M.; Sgibnev, I.V.

    1980-08-21

    A method of manufacturing a layer thermoelectric battery is described, whereby a film of a thermoelectric semiconductor material which is an n-type stoichiometric solid solution containing Bi2Te3 and Sb2Te3 is deposited on a substrate. Then heating is effected so that adjacent arms of the film are at different temperatures, some at a temperature of not above 300/sup 0/C, and others at a temperature of not less than 350/sup 0/C.

  17. Manufacture of Radio Frequency Micromachined Switches with Annealing

    OpenAIRE

    Lin, Cheng-Yang; Dai, Ching-Liang

    2014-01-01

    The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspe...

  18. Flexible photonic-crystal Fano filters based on transferred semiconductor nanomembranes

    Energy Technology Data Exchange (ETDEWEB)

    Zhou Weidong; Yang Hongjun; Qiang Zexuan; Chen Li; Yang Weiquan; Chuwongin, Santhad; Zhao Deyin [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, TX 76019 (United States); Ma Zhenqiang; Qin Guoxuan; Pang Huiqing, E-mail: wzhou@uta.ed, E-mail: mazq@engr.wisc.ed [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, WI 53706 (United States)

    2009-12-07

    Crystalline semiconductor nanomembranes (NMs), which are transferable, stackable, bondable and manufacturable, offer unprecedented opportunities for unique and novel device applications. We report and review here nanophotonic devices based on stacked semiconductor NMs that were built on Si, glass and flexible PET substrates. Photonic-crystal Fano resonance based surface-normal optical filters and broadband reflectors have been demonstrated with unique angle and polarization properties. Such a low temperature NM stacking process can lead to a paradigm shift on silicon photonic integration and inorganic flexible photonics.

  19. An integrated semiconductor device enabling non-optical genome sequencing.

    Science.gov (United States)

    Rothberg, Jonathan M; Hinz, Wolfgang; Rearick, Todd M; Schultz, Jonathan; Mileski, William; Davey, Mel; Leamon, John H; Johnson, Kim; Milgrew, Mark J; Edwards, Matthew; Hoon, Jeremy; Simons, Jan F; Marran, David; Myers, Jason W; Davidson, John F; Branting, Annika; Nobile, John R; Puc, Bernard P; Light, David; Clark, Travis A; Huber, Martin; Branciforte, Jeffrey T; Stoner, Isaac B; Cawley, Simon E; Lyons, Michael; Fu, Yutao; Homer, Nils; Sedova, Marina; Miao, Xin; Reed, Brian; Sabina, Jeffrey; Feierstein, Erika; Schorn, Michelle; Alanjary, Mohammad; Dimalanta, Eileen; Dressman, Devin; Kasinskas, Rachel; Sokolsky, Tanya; Fidanza, Jacqueline A; Namsaraev, Eugeni; McKernan, Kevin J; Williams, Alan; Roth, G Thomas; Bustillo, James

    2011-07-20

    The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non-optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template-directed DNA polymerase synthesis using all-natural nucleotides on this massively parallel semiconductor-sensing device or ion chip. The ion chip contains ion-sensitive, field-effect transistor-based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal-oxide semiconductor (CMOS) process, allows for low-cost, large-scale production and scaling of the device to higher densities and larger array sizes. We show the performance of the system by sequencing three bacterial genomes, its robustness and scalability by producing ion chips with up to 10 times as many sensors and sequencing a human genome.

  20. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    International Nuclear Information System (INIS)

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

  1. Semiconductor Strip Tracker Endcaps come to CERN

    CERN Multimedia

    P. Bell

    The first few months of 2006 saw the delivery to CERN of the final components of the ATLAS Semi-Conductor Tracker (SCT), namely the completed SCT end-caps. Regular ATLAS eNews readers will recall that the SCT barrel arrived in sections in 2005 and was assembled later that year (see the April 2005 and December 2005 issues, respectively.) And as reported in this issue of the eNews, the barrel SCT has recently been integrated with the barrel Transition Radiation Tracker. The end-caps were constructed in Liverpool (side C) and NIKHEF (side A), using components manufactured at many different sites across the world. End-cap C left Liverpool on Monday 20 February and arrived at CERN after a two-day journey by road and through the Channel Tunnel. Accelerations in all three dimensions were monitored during the trip, as was temperature and humidity inside the container; all values remained within pre-specified safe ranges. The end-cap was visually inspected upon arrival, with no obvious damage being seen. Subsequent ...

  2. Measuring Manufacturing Innovativeness

    DEFF Research Database (Denmark)

    Blichfeldt, Henrik; Knudsen, Mette Præst

    2017-01-01

    Globalization and customization increases the pressure on manufacturing companies, and the ability to provide innovativeness is a potential source of competitive advantage. This paper positions the manufacturing entity in the innovation process, and investigates the relation between innovation vers...... technology and organizational concepts. Based on Danish survey data from the European Manufacturing Survey (EMS-2015) this paper finds that there is a relation between innovative companies, and their level of technology and use of organizational concepts. Technology and organizational concepts act...... as manufacturing levers to support the manufacturing and production system to provide innovativeness. The managerial implication lies in building manufacturing capabilities to support the innovative process, by standardization, optimization and creating stability in combination with automation and advanced...

  3. Automated capacitive spectrometer for measuring the parameters of deep centers in semiconductor materials

    International Nuclear Information System (INIS)

    Shajmeev, S.S.

    1985-01-01

    An automated capacitive spectrometer for determining deep centers parameters in semiconductor materials and instruments is described. The facility can be used in studying electrically active defects (impurity, radiation, thermal) having deep levels in the forbidden semiconductor zone. The facility permits to determine the following parameters of the deep centers: concentration of each deep level taken separately within 5x10 -1 +-5x10 -15 of the alloying impurity concentration, level energy position in the forbidden semiconductor zone in the range from 0.08 MeV above the valency zone ceiling to 0.08 eV below the conductivity zone bottom, hole or electron capture cross-section on the deep center; concentration profile of deep levels

  4. Manufacturing ontology through templates

    Directory of Open Access Journals (Sweden)

    Diciuc Vlad

    2017-01-01

    Full Text Available The manufacturing industry contains a high volume of knowhow and of high value, much of it being held by key persons in the company. The passing of this know-how is the basis of manufacturing ontology. Among other methods like advanced filtering and algorithm based decision making, one way of handling the manufacturing ontology is via templates. The current paper tackles this approach and highlights the advantages concluding with some recommendations.

  5. Manufacturing knowledge management strategy

    OpenAIRE

    Shaw , Duncan; Edwards , John

    2006-01-01

    Abstract The study sought to understand the components of knowledge management strategy from the perspective of staff in UK manufacturing organisations. To analyse this topic we took an empirical approach and collaborated with two manufacturing organisations. Our main finding centres on the key components of a knowledge management strategy, and the relationships between it and manufacturing strategy and corporate strategy. Other findings include: the nature of knowledge in manufact...

  6. Semiconductor detectors in nuclear and particle physics

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1992-01-01

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups: Classical semiconductor diode detectors and semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported

  7. Semiconductor detectors in nuclear and particle physics

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1995-01-01

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups; (i) classical semiconductor diode detectors and (ii) semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported. copyright 1995 American Institute of Physics

  8. Mechanical Prototyping and Manufacturing Internship

    Science.gov (United States)

    Grenfell, Peter

    2016-01-01

    The internship was located at the Johnson Space Center (JSC) Innovation Design Center (IDC), which is a facility where the JSC workforce can meet and conduct hands-on innovative design, fabrication, evaluation, and testing of ideas and concepts relevant to NASA's mission. The tasks of the internship included mechanical prototyping design and manufacturing projects in service of research and development as well as assisting the users of the IDC in completing their manufacturing projects. The first project was to manufacture hatch mechanisms for a team in the Systems Engineering and Project Advancement Program (SETMAP) hexacopter competition. These mechanisms were intended to improve the performance of the servomotors and offer an access point that would also seal to prevent cross-contamination. I also assisted other teams as they were constructing and modifying their hexacopters. The success of this competition demonstrated a proof of concept for aerial reconnaissance and sample return to be potentially used in future NASA missions. I also worked with Dr. Kumar Krishen to prototype an improved thermos and a novel, portable solar array. Computer-aided design (CAD) software was used to model the parts for both of these projects. Then, 3D printing as well as conventional techniques were used to produce the parts. These prototypes were then subjected to trials to determine the success of the designs. The solar array is intended to work in a cluster that is easy to set up and take down and doesn't require powered servomechanisms. It could be used terrestrially in areas not serviced by power grids. Both projects improve planetary exploration capabilities to future astronauts. Other projects included manufacturing custom rail brackets for EG-2, assisting engineers working on underwater instrument and tool cases for the NEEMO project, and helping to create mock-up parts for Space Center Houston. The use of the IDC enabled efficient completion of these projects at

  9. Industrial & Manufacturing Engineering | Classification | College of

    Science.gov (United States)

    Electrical Engineering Instructional Laboratories Student Resources Industrial & Manufacturing Engineering Industrial & Manufacturing Engineering Academic Programs Industrial & Manufacturing Engineering Major Industrial & Manufacturing Engineering Minor Industrial & Manufacturing Engineering

  10. Strategic Roles of Manufacturing

    DEFF Research Database (Denmark)

    Yang, Cheng

    with the trend of globalisation, how do industrial companies develop their global manufacturing networks? These two questions are actually interlinked. On the one hand, facing increasing offshoring and outsourcing of production activities, industrial companies have to understand how to develop their global...... manufacturing networks. On the other hand, ongoing globalisation also brings tremendous impacts to post-industrial economies (e.g. Denmark). A dilemma therefore arises, i.e. whether it is still necessary to keep manufacturing in these post-industrial economies; if yes, what kinds of roles manufacturing should...

  11. Photovoltaic industry manufacturing technology. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Vanecek, D.; Diver, M.; Fernandez, R. [Automation and Robotics Research Inst., Fort Worth, TX (United States)

    1998-08-01

    This report contains the results of the Photovoltaic (PV) Industry Manufacturing Technology Assessment performed by the Automation and Robotics Research Institute (ARRI) of the University of Texas at Arlington for the National Renewable Energy laboratory. ARRI surveyed eleven companies to determine their state-of-manufacturing in the areas of engineering design, operations management, manufacturing technology, equipment maintenance, quality management, and plant conditions. Interviews with company personnel and plant tours at each of the facilities were conducted and the information compiled. The report is divided into two main segments. The first part of the report presents how the industry as a whole conforms to ``World Class`` manufacturing practices. Conclusions are drawn from the results of a survey as to the areas that the PV industry can improve on to become more competitive in the industry and World Class. Appendix A contains the questions asked in the survey, a brief description of the benefits to performing this task and the aggregate response to the questions. Each company participating in the assessment process received the results of their own facility to compare against the industry as a whole. The second part of the report outlines opportunities that exist on the shop floor for improving Process Equipment and Automation Strategies. Appendix B contains the survey that was used to assess each of the manufacturing processes.

  12. Nonterrestrial material processing and manufacturing of large space systems

    Science.gov (United States)

    Von Tiesenhausen, G.

    1979-01-01

    Nonterrestrial processing of materials and manufacturing of large space system components from preprocessed lunar materials at a manufacturing site in space is described. Lunar materials mined and preprocessed at the lunar resource complex will be flown to the space manufacturing facility (SMF), where together with supplementary terrestrial materials, they will be final processed and fabricated into space communication systems, solar cell blankets, radio frequency generators, and electrical equipment. Satellite Power System (SPS) material requirements and lunar material availability and utilization are detailed, and the SMF processing, refining, fabricating facilities, material flow and manpower requirements are described.

  13. Metal oxide semiconductor thin-film transistors for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Petti, Luisa; Vogt, Christian; Büthe, Lars; Cantarella, Giuseppe; Tröster, Gerhard [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Münzenrieder, Niko [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Sensor Technology Research Centre, University of Sussex, Falmer (United Kingdom); Faber, Hendrik; Bottacchi, Francesca; Anthopoulos, Thomas D. [Department of Physics and Centre for Plastic Electronics, Imperial College London, London (United Kingdom)

    2016-06-15

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In

  14. Optimizing Two-Color Semiconductor Nanocrystal Immunoassays in Single Well Microtiter Plate Formats

    Directory of Open Access Journals (Sweden)

    W. Russ Algar

    2011-08-01

    Full Text Available The simultaneous detection of two analytes, chicken IgY (IgG and Staphylococcal enterotoxin B (SEB, in the single well of a 96-well plate is demonstrated using luminescent semiconductor quantum dot nanocrystal (NC tracers. The NC-labeled antibodies were prepared via sulfhydryl-reactive chemistry using a facile protocol that took

  15. 76 FR 39128 - Manufacturer of Controlled Substances; Notice of Registration

    Science.gov (United States)

    2011-07-05

    ... February 23, 2011, 76 FR 10068, Johnson Matthey Pharmaceutical Materials Inc., Pharmaceutical Service, 25...) II Sufentanil (9740) II Hydrocodone (9193) II The company plans to utilize this facility to... support of the company's primary manufacturing facility in West Deptford, New Jersey. The controlled...

  16. QA engineering for the LCP USA magnet manufacturers

    International Nuclear Information System (INIS)

    Childress, C.E.; Batey, J.E.; Burn, P.B.

    1981-01-01

    This paper describes the QA and QC efforts and results used in fabricating the superconducting magnets of competing designs being developed by American Manufacturers for testing in the ORNL Large Coil Test Facility. Control of the design, materials and processes to assure proper functioning of the magnets in the test facility as well as the content of archival data being compiled is discussed

  17. RPC industries - UV and EB equipment manufacturers

    International Nuclear Information System (INIS)

    Rodrigues, A.M.

    1987-01-01

    RPC Industries has been manufacturing electron beam and ultraviolet equipment for the industrial processing of materials for more than 15 years. RPC maintains its headquarters and electron processor manufacturing plant in Hayward, California. UV equipment is made in the company's plant near Chicago. Sales offices are maintained in New York, Illinois, and California in the USA, and in Germany, Japan, Australia, Italy, Israel, and Sweden. Complete testing and pilot facilities are available in Hayward (EB) and near Chicago (UV). Described below are the basic system components, applications and advantages of RPC's UV and EB systems. (orig.)

  18. Transversal light forces in semiconductors

    CERN Document Server

    Lindberg, M

    2003-01-01

    The transversal light force is a well established effect in atomic and molecular systems that are exposed to spatially inhomogeneous light fields. In this paper it is shown theoretically that in an excited semiconductor, containing an electron-hole plasma or excitons, a similar light force exists, if the semiconductor is exposed to an ultrashort spatially inhomogeneous light field. The analysis is based on the equations of motion for the Wigner distribution functions of charge carrier populations and interband polarizations. The results show that, while the light force on the electron-hole plasma or the excitons does exist, its effects on the kinetic behaviour of the electron-hole plasma or the excitons are different compared to the situation in an atomic or molecular system. A detailed analysis presented here traces this difference back to the principal differences between atoms and molecules on the one hand and electron-hole plasmas or excitons on the other hand.

  19. Semiconductor electrolyte photovoltaic energy converter

    Science.gov (United States)

    Anderson, W. W.; Anderson, L. B.

    1975-01-01

    Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

  20. Hypersonic modes in nanophononic semiconductors.

    Science.gov (United States)

    Hepplestone, S P; Srivastava, G P

    2008-09-05

    Frequency gaps and negative group velocities of hypersonic phonon modes in periodically arranged composite semiconductors are presented. Trends and criteria for phononic gaps are discussed using a variety of atomic-level theoretical approaches. From our calculations, the possibility of achieving semiconductor-based one-dimensional phononic structures is established. We present results of the location and size of gaps, as well as negative group velocities of phonon modes in such structures. In addition to reproducing the results of recent measurements of the locations of the band gaps in the nanosized Si/Si{0.4}Ge{0.6} superlattice, we show that such a system is a true one-dimensional hypersonic phononic crystal.