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Sample records for semiconductor lasers iii

  1. Design and Characterisation of III-V Semiconductor Nanowire Lasers

    Science.gov (United States)

    Saxena, Dhruv

    The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor nanowire lasers are demonstrated, namely, GaAs nanowire lasers, GaAs/AlGaAs multi-quantum well (MQW) nanowire lasers and InP nanowire lasers. These nanowire lasers are shown to operate at room temperature, have low thresholds, and lase from different transverse modes. The structural and optoelectronic quality of nanowire lasers are characterised via electron microscopy and photoluminescence spectroscopic techniques. Lasing is characterised in all these devices by optical pumping. The lasing characteristics are analysed by rate equation modelling and the lasing mode(s) in these devices is characterised by threshold gain modelling, polarisation measurements and Fourier plane imaging. Firstly, GaAs nanowire lasers that operate at room temperature are demonstrated. This is achieved by determining the optimal nanowire diameter to reduce threshold gain and by passivating nanowires to improve their quantum efficiency (QE). High-quality surface passivated GaAs nanowires of suitable diameters are grown. The growth procedure is tailored to improve both QE and structural uniformity of nanowires. Room-temperature lasing is demonstrated from individual nanowires and lasing is characterised to be from TM01 mode by threshold gain modelling. To lower threshold even further, nanowire lasers with GaAs/AlGaAs coaxial multi

  2. Controlling the emission wavelength in group III-V semiconductor laser diodes

    KAUST Repository

    Ooi, Boon S.; Majid, Mohammed Abdul; Afandy, Rami; Aljabr, Ahmad

    2016-01-01

    Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III

  3. Controlling the emission wavelength in group III-V semiconductor laser diodes

    KAUST Repository

    Ooi, Boon S.

    2016-12-29

    Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

  4. Pulsed laser deposition of II-VI and III-V semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Mele, A.; Di Palma, T.M.; Flamini, C.; Giardini Guidoni, A. [Rome, Univ. `La Sapienza` (Italy). Dep. di Chimica

    1998-12-01

    Pulsed laser irradiation of a solid target involves electronic excitation and heating, followed by expansion from the target of the elliptical gas cloud (plume) which can be eventually condensed on a suitable substrate. Pulsed laser ablation has been found to be a valuable technique to prepare II-VI and III-V thin films of semiconductor materials. Pulsed laser ablation deposition is discussed in the light of the results of an investigation on CdS, CdSe, CdTe and CdSe/CdTe multilayers and AIN, GaN and InN together with Al-Ga-In-N heterostructures. [Italiano] L`irradiazione di un target solido, mediante un fascio laser impulsato, genera una serie di processi che possono essere schematizzati come segue: riscaldamento ed eccitazione elettronica del target, da cui consegue l`espulsione di materiale sotto forma di una nube gassosa di forma ellissoidale (plume), che espande e puo` essere fatta depositare su un opportuno substrato. L`ablazione lasersi e` rivelata una tecnica valida per preparare film sottili di composti di elementi del II-VI e del III-V gruppo della tavola periodica. La deposizione via ablazione laser viene discussa alla luce dei risultati ottenuti nella preparazione di film di CdS, CdSe, CdTe e di film multistrato di CdSe/CdTe, di film di AIN, GaN, InN e di eterostrutture di Al-Ga-In-N.

  5. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  6. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  7. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  8. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  9. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  10. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  11. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  12. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  13. Vortex Laser based on III-V semiconductor metasurface: direct generation of coherent Laguerre-Gauss modes carrying controlled orbital angular momentum.

    Science.gov (United States)

    Seghilani, Mohamed S; Myara, Mikhael; Sellahi, Mohamed; Legratiet, Luc; Sagnes, Isabelle; Beaudoin, Grégoire; Lalanne, Philippe; Garnache, Arnaud

    2016-12-05

    The generation of a coherent state, supporting a large photon number, with controlled orbital-angular-momentum L = ħl (of charge l per photon) presents both fundamental and technological challenges: we demonstrate a surface-emitting laser, based on III-V semiconductor technology with an integrated metasurface, generating vortex-like coherent state in the Laguerre-Gauss basis. We use a first order phase perturbation to lift orbital degeneracy of wavefunctions, by introducing a weak anisotropy called here "orbital birefringence", based on a dielectric metasurface. The azimuthal symmetry breakdown and non-linear laser dynamics create "orbital gain dichroism" allowing selecting vortex handedness. This coherent photonic device was characterized and studied, experimentally and theoretically. It exhibits a low divergence (50 dB vortex purity), and single frequency operation in a stable low noise regime (0.1% rms). Such high performance laser opens the path to widespread new photonic applications.

  14. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  15. A semiconductor laser device

    Energy Technology Data Exchange (ETDEWEB)

    Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

    1984-03-17

    A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

  16. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  17. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

    2000-01-01

    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

  18. Waveguide based external cavity semiconductor lasers

    NARCIS (Netherlands)

    Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

    2012-01-01

    We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

  19. III-V semiconductor materials and devices

    CERN Document Server

    Malik, R J

    1989-01-01

    The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.

  20. Laser semiconductor diode integrated with frequency doubler

    International Nuclear Information System (INIS)

    Tighineanu, I.; Dorogan, V.; Suruceanu, G.

    2003-01-01

    The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

  1. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  2. Semiconductor processing with excimer lasers

    International Nuclear Information System (INIS)

    Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.

    1983-01-01

    The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications

  3. Theory of semiconductor laser cooling

    Science.gov (United States)

    Rupper, Greg

    Recently laser cooling of semiconductors has received renewed attention, with the hope that a semiconductor cooler might be able to achieve cryogenic temperatures. In order to study semiconductor laser cooling at cryogenic temperatures, it is crucial that the theory include both the effects of excitons and the electron-hole plasma. In this dissertation, I present a theoretical analysis of laser cooling of bulk GaAs based on a microscopic many-particle theory of absorption and luminescence of a partially ionized electron-hole plasma. This theory has been analyzed from a temperature 10K to 500K. It is shown that at high temperatures (above 300K), cooling can be modeled using older models with a few parameter changes. Below 200K, band filling effects dominate over Auger recombination. Below 30K excitonic effects are essential for laser cooling. In all cases, excitonic effects make cooling easier then predicted by a free carrier model. The initial cooling model is based on the assumption of a homogeneous undoped semiconductor. This model has been systematically modified to include effects that are present in real laser cooling experiments. The following modifications have been performed. (1) Propagation and polariton effects have been included. (2) The effect of p-doping has been included. (n-doping can be modeled in a similar fashion.) (3) In experiments, a passivation layer is required to minimize non-radiative recombination. The passivation results in a npn heterostructure. The effect of the npn heterostructure on cooling has been analyzed. (4) The effect of a Gaussian pump beam was analyzed and (5) Some of the parameters in the cooling model have a large uncertainty. The effect of modifying these parameters has been analyzed. Most of the extensions to the original theory have only had a modest effect on the overall results. However we find that the current passivation technique may not be sufficient to allow cooling. The passivation technique currently used appears

  4. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2013-01-01

    This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

  5. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2008-01-01

    This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

  6. Chaotic bursting in semiconductor lasers

    Science.gov (United States)

    Ruschel, Stefan; Yanchuk, Serhiy

    2017-11-01

    We investigate the dynamic mechanisms for low frequency fluctuations in semiconductor lasers subjected to delayed optical feedback, using the Lang-Kobayashi model. This system of delay differential equations displays pronounced envelope dynamics, ranging from erratic, so called low frequency fluctuations to regular pulse packages, if the time scales of fast oscillations and envelope dynamics are well separated. We investigate the parameter regions where low frequency fluctuations occur and compute their Lyapunov spectra. Using the geometric singular perturbation theory, we study this intermittent chaotic behavior and characterize these solutions as bursting slow-fast oscillations.

  7. High brightness semiconductor lasers with reduced filamentation

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter.; Skovgaard, Peter M. W.

    1999-01-01

    High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture...

  8. Ultrafast laser-semiconductor interactions

    International Nuclear Information System (INIS)

    Schile, L.A.

    1996-01-01

    Studies of the ultrafast (< 100 fs) interactions of infrared, sub-100 fs laser pulses with IR, photosensitive semiconductor materials InGaAs, InSb, and HgCdTe are reported. Both the carrier dynamics and the associated Terahertz radiation from these materials are discussed. The most recent developments of femtosecond (< 100 fs) Optical Parametric Oscillators (OPO) has extended the wavelength range from the visible to 5.2 μm. The photogenerated semiconductor free carrier dynamics are determined in the 77 to 300 degrees K temperature range using the Transmission Correlation Peak (TCP) method. The electron-phonon scattering times are typically 200 - 600 fs. Depending upon the material composition and substrate on which the IR crystalline materials are deposited, the nonlinear TCP absorption gives recombination rates as fast as 10's of picoseconds. For the HgCdTe, there exists a 400 fs electron-phonon scattering process along with a much longer 3600 fs loss process. Studies of the interactions of these ultrashort laser pulses with semiconductors produce Terahertz (Thz) radiative pulses. With undoped InSb, there is a substantial change in the spectral content of this THz radiation between 80 - 260 degrees K while the spectrum of Te-doped InSb remains nearly unchanged, an effect attributed to its mobility being dominated by impurity scattering. At 80 degrees K, the terahertz radiation from undoped InSb is dependent on wavelength, with both a higher frequency spectrum and much larger amplitudes generated at longer wavelengths. No such effect is observed at 260 degrees K. Finally, new results on the dependence of the emitted THz radiation on the InSb crystal's orientation is presented

  9. Progress in semiconductor laser diodes: SPIE volume 723

    International Nuclear Information System (INIS)

    Eichen, E.

    1987-01-01

    This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes

  10. Frequency modulation of semiconductor disk laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Zolotovskii, I O; Korobko, D A; Okhotnikov, O G [Ulyanovsk State University, Ulyanovsk (Russian Federation)

    2015-07-31

    A numerical model is constructed for a semiconductor disk laser mode-locked by a semiconductor saturable absorber mirror (SESAM), and the effect that the phase modulation caused by gain and absorption saturation in the semiconductor has on pulse generation is examined. The results demonstrate that, in a laser cavity with sufficient second-order dispersion, alternating-sign frequency modulation of pulses can be compensated for. We also examine a model for tuning the dispersion in the cavity of a disk laser using a Gires–Tournois interferometer with limited thirdorder dispersion. (control of radiation parameters)

  11. Laser Cooling of 2-6 Semiconductors

    Science.gov (United States)

    2016-08-12

    AFRL-AFOSR-JP-TR-2016-0067 Laser Cooling of II-VI Semiconductors Qihua Xiong NANYANG TECHNOLOGICAL UNIVERSITY Final Report 08/12/2016 DISTRIBUTION A...From - To) 15 May 2013 to 14 May 2016 4. TITLE AND SUBTITLE Laser Cooling of II-VI Semiconductors 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-13-1...13. SUPPLEMENTARY NOTES 14. ABSTRACT The breakthrough of laser cooling in semiconductor has stimulated strong interest in further scaling up towards

  12. Study on guided waves in semiconductor lasers

    International Nuclear Information System (INIS)

    Pudensi, M.A.A.

    1980-01-01

    In This work we studied the guided waves in semiconductor lasers. In the first part we carried on the experimental measurements on lasers with stripe nonorthogonal to the mirrors. In the second part we developed a matrix method for the study of propagation and reflection of guided waves in lasers. (author) [pt

  13. Semiconductor lasers in rheumatological treatment

    Science.gov (United States)

    Pascu, Mihail-Lucian; Suteanu, S.; Ignat, P.; Pruna, Simion; Chitu, A.

    1995-03-01

    A computer controlled equipment, containing 6 lasers (HeNe and 5 diode lasers--DL) conceived to be used in rheumatological treatment is reported. DL emit at 895 nm and for typical applications, their expanded spots are superposed within the irradiation plane, on the HeNE defocused spot used to define the surface to be irradiated. DL emit 100 nsec pulses between 0.5 KHz and 1.5 KHz repetition rate and 0.5 mW average power (measured at 1 KHz). 150 patients with rheumathologic diseases were treated: lumbar spondylosis (75), gonarthrosis (30), cervical spondylosis (21), coxarthrosis (15), Heberden and Bouchard (9). The treatment consisted of: group I, 50 patients--laser therapy, 10 min/day, 10 days; group II, 50 patients--classical antirheumatic treatment; group III, 50 patients--mixed treatment. Assessment of sympathetic skin activity made using reactometry measurements, shows that latency time was longer before irradiation, 1867 +/- 289) msec then after, (1234 +/- 321) msec. Pain rating indexes decreasing for all three groups of patients were measured. Better results for more superficial diseases were obtained and best results were observed after irradiation with 1 KHz - 1.5 KHz repetition rate IR pulses. Better results were obtained when spot irradiation in a few points combined with zone irradiations was used.

  14. Effect of gain nonlinearity in semiconductor lasers

    DEFF Research Database (Denmark)

    Jensen, Niels H.; Christiansen, Peter Leth; Skovgaard, Ove

    1988-01-01

    Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2+1)-dimensi......Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2...

  15. Laser vapor phase deposition of semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Karlov, N.V.; Luk' ianchuk, B.S.; Sisakian, E.V.; Shafeev, G.A.

    1987-06-01

    The pyrolytic effect of IR laser radiation is investigated with reference to the initiation and control of the vapor phase deposition of semiconductor films. By selecting the gas mixture composition and laser emission parameters, it is possible to control the deposition and crystal formation processes on the surface of semiconductors, with the main control action achieved due to the nonadiabatic kinetics of reactions in the gas phase and high temperatures in the laser heating zone. This control mechanism is demonstrated experimentally during the laser vapor deposition of germanium and silicon films from tetrachlorides on single-crystal Si and Ge substrates. 5 references.

  16. Hybrid III-V/silicon lasers

    Science.gov (United States)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  17. Semiconductor laser technology for remote sensing experiments

    Science.gov (United States)

    Katz, Joseph

    1988-01-01

    Semiconductor injection lasers are required for implementing virtually all spaceborne remote sensing systems. Their main advantages are high reliability and efficiency, and their main roles are envisioned in pumping and injection locking of solid state lasers. In some shorter range applications they may even be utilized directly as the sources.

  18. Semiconductor laser using multimode interference principle

    Science.gov (United States)

    Gong, Zisu; Yin, Rui; Ji, Wei; Wu, Chonghao

    2018-01-01

    Multimode interference (MMI) structure is introduced in semiconductor laser used in optical communication system to realize higher power and better temperature tolerance. Using beam propagation method (BPM), Multimode interference laser diode (MMI-LD) is designed and fabricated in InGaAsP/InP based material. As a comparison, conventional semiconductor laser using straight single-mode waveguide is also fabricated in the same wafer. With a low injection current (about 230 mA), the output power of the implemented MMI-LD is up to 2.296 mW which is about four times higher than the output power of the conventional semiconductor laser. The implemented MMI-LD exhibits stable output operating at the wavelength of 1.52 μm and better temperature tolerance when the temperature varies from 283.15 K to 293.15 K.

  19. Semiconductor Laser Tracking Frequency Distance Gauge

    Science.gov (United States)

    Phillips, James D.; Reasenberg, Robert D.

    2009-01-01

    Advanced astronomical missions with greatly enhanced resolution and physics missions of unprecedented accuracy will require a spaceworthy laser distance gauge of substantially improved performance. The Tracking Frequency Gauge (TFG) uses a single beam, locking a laser to the measurement interferometer. We have demonstrated this technique with pm (10(exp -12) m) performance. We report on the version we are now developing based on space-qualifiable, fiber-coupled distributed-feedback semiconductor lasers.

  20. Teradiode's high brightness semiconductor lasers

    Science.gov (United States)

    Huang, Robin K.; Chann, Bien; Burgess, James; Lochman, Bryan; Zhou, Wang; Cruz, Mike; Cook, Rob; Dugmore, Dan; Shattuck, Jeff; Tayebati, Parviz

    2016-03-01

    TeraDiode is manufacturing multi-kW-class ultra-high brightness fiber-coupled direct diode lasers for industrial applications. A fiber-coupled direct diode laser with a power level of 4,680 W from a 100 μm core diameter, BPP) of 3.5 mm-mrad and is the lowest BPP multi-kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 4-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers. We have also demonstrated novel high peak power lasers and high brightness Mid-Infrared Lasers.

  1. Reduced filamentation in high power semiconductor lasers

    DEFF Research Database (Denmark)

    Skovgaard, Peter M. W.; McInerney, John; O'Brien, Peter

    1999-01-01

    High brightness semiconductor lasers have applications in fields ranging from material processing to medicine. The main difficulty associated with high brightness is that high optical power densities cause damage to the laser facet and thus require large apertures. This, in turn, results in spatio......-temporal instabilities such as filamentation which degrades spatial coherence and brightness. We first evaluate performance of existing designs with a “top-hat” shaped transverse current density profile. The unstable nature of highly excited semiconductor material results in a run-away process where small modulations...

  2. III-nitride semiconductors and their modern devices

    CERN Document Server

    2013-01-01

    This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and...

  3. MBE System for Antimonide Based Semiconductor Lasers

    National Research Council Canada - National Science Library

    Lester, Luke

    1999-01-01

    .... SLR-770 inductively coupled plasma (ICP) processing system. The SLR-770 has been invaluable in the study of plasma etching of AlGaAsSb and GaSb-materials that form the backbone of antimonide-based semiconductor lasers...

  4. E-beam-pumped semiconductor lasers

    Science.gov (United States)

    Rice, Robert R.; Shanley, James F.; Ruggieri, Neil F.

    1995-04-01

    The collapse of the Soviet Union opened many areas of laser technology to the West. E-beam- pumped semiconductor lasers (EBSL) were pursued for 25 years in several Soviet Institutes. Thin single crystal screens of II-VI alloys (ZnxCd1-xSe, CdSxSe1-x) were incorporated in laser CRTs to produce scanned visible laser beams at average powers greater than 10 W. Resolutions of 2500 lines were demonstrated. MDA-W is conducting a program for ARPA/ESTO to assess EBSL technology for high brightness, high resolution RGB laser projection application. Transfer of II-VI crystal growth and screen processing technology is underway, and initial results will be reported. Various techniques (cathodoluminescence, one- and two-photon laser pumping, etc.) have been used to assess material quality and screen processing damage. High voltage (75 kV) video electronics were procured in the U.S. to operate test EBSL tubes. Laser performance was documented as a function of screen temperature, beam voltage and current. The beam divergence, spectrum, efficiency and other characteristics of the laser output are being measured. An evaluation of the effect of laser operating conditions upon the degradation rate is being carried out by a design-of-experiments method. An initial assessment of the projected image quality will be performed.

  5. Asymmetrically excited semiconductor injection laser

    International Nuclear Information System (INIS)

    Ladany, I.; Marinelli, D.P.; Kressel, H.; Cannuli, V.M.

    1975-01-01

    A diode laser is improved in order to produce an output in a single longitudinal mode. The laser has a rectangular body with two regions of differing conductivity type material. Extending from one surface of the rectangular body and into one of the regions of differing conductivity material is a third region. Although the third region is composed of the same general conductivity type material as the region into which it extends, it is more highly doped with conductivity modifiers (more conductive). This third region extends along one surface between the ends of the body and is spaced from the sides of the body. An electrical contact stripe is positioned on the one surface so that a portion of its width overlaps a portion of the width of the third region

  6. Optical double-locked semiconductor lasers

    Science.gov (United States)

    AlMulla, Mohammad

    2018-06-01

    Self-sustained period-one (P1) nonlinear dynamics of a semiconductor laser are investigated when both optical injection and modulation are applied for stable microwave frequency generation. Locking the P1 oscillation through modulation on the bias current, injection strength, or detuning frequency stabilizes the P1 oscillation. Through the phase noise variance, the different modulation types are compared. It is demonstrated that locking the P1 oscillation through optical modulation on the output of the master laser outperforms bias-current modulation of the slave laser. Master laser modulation shows wider P1-oscillation locking range and lower phase noise variance. The locking characteristics of the P1 oscillation also depend on the operating conditions of the optical injection system

  7. Squeezing in an injection-locked semiconductor laser

    Science.gov (United States)

    Inoue, S.; Machida, S.; Yamamoto, Y.; Ohzu, H.

    1993-09-01

    The intensity-noise properties of an injection-locked semiconductor laser were studied experimentally. The constant-current-driven semiconductor laser producing the amplitude-squeezed state whose intensity noise was reduced below the standard quantum limit (SQL) by 0.72 dB was injection-locked by an external master laser. The measured intensity-noise level of the injection-locked semiconductor laser was 0.91 dB below the SQL. This experimental result indicates that a phase-coherent amplitude-squeezed state or squeezed vacuum state together with a reference local oscillator wave can be generated directly by semiconductor laser systems.

  8. EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

    Science.gov (United States)

    Calvez, S.; Adams, M. J.

    2012-09-01

    Anniversaries call for celebrations. Since it is now fifty years since the first semiconductor lasers were reported, it is highly appropriate to celebrate this anniversary with a Special Issue dedicated to the topic. The semiconductor laser now has a major effect on our daily lives since it has been a key enabler in the development of optical fibre communications (and hence the internet and e-mail), optical storage (CDs, DVDs, etc) and barcode scanners. In the early 1960s it was impossible for most people (with the exception of very few visionaries) to foresee any of these future developments, and the first applications identified were for military purposes (range-finders, target markers, etc). Of course, many of the subsequent laser applications were made possible by developments in semiconductor materials, in the associated growth and fabrication technology, and in the increased understanding of the underlying fundamental physics. These developments continue today, so that the subject of semiconductor lasers, although mature, is in good health and continues to grow. Hence, we can be confident that the pervasive influence of semiconductor lasers will continue to develop as optoelectronics technology makes further advances into other sectors such as healthcare, security and a whole host of applications based on the global imperatives to reduce energy consumption, minimise environmental impact and conserve resources. The papers in this Special Issue are intended to tell some of the story of the last fifty years of laser development as well as to provide evidence of the current state of semiconductor laser research. Hence, there are a number of papers where the early developments are recalled by authors who played prominent parts in the story, followed by a selection of papers from authors who are active in today's exciting research. The twenty-fifth anniversary of the semiconductor laser was celebrated by the publication of a number of papers dealing with the early

  9. The features of modelling semiconductor lasers with a wide contact

    Directory of Open Access Journals (Sweden)

    Rzhanov Alexey

    2017-01-01

    Full Text Available The aspects of calculating the dynamics and statics of powerful semiconductor laser diodes radiation are investigated. It takes into account the main physical mechanisms influencing power, spectral composition, far and near field of laser radiation. It outlines a dynamic distributed model of a semiconductor laser with a wide contact and possible algorithms for its implementation.

  10. The pursuit of electrically-driven organic semiconductor lasers

    NARCIS (Netherlands)

    Bisri, Satria Zulkarnaen; Takenobu, Taishi; Iwasa, Yoshihiro

    2014-01-01

    Organic semiconductors have many favourable and plastic-like optical properties that are promising for the development of low energy consuming laser devices. Although optically-pumped organic semiconductor lasers have been demonstrated since the early days of lasers, electrically-driven organic

  11. Melting phenomenon and laser annealing in semiconductors

    International Nuclear Information System (INIS)

    Narayan, J.

    1981-03-01

    The work on annealing of displacement damage, dissolution of boron precipitates, and the broadening of dopant profiles in semiconductors after treating with ruby and dye laser pulses is reviewed in order to provide convincing evidence for the melting phenomenon and illustrate the mechanism associated with laser annealing. The nature of the solid-liquid interface and the interface instability during rapid solidification is considered in detail. It is shown that solute concentrations after pulsed laser annealing can far exceed retrograde maxima values. However, there is a critical solute concentration above which a planar solid-liquid interface becomes unstable and breaks into a cellular structure. The solute concentrations and cell sizes associated with this instability are calculated using a perturbation theory, and compared with experimental results

  12. Cleavage mechanoluminescence in elemental and III-V semiconductors

    International Nuclear Information System (INIS)

    Chandra, B.P.; Patel, R.P.; Gour, Anubha S.; Chandra, V.K.; Gupta, R.K.

    2003-01-01

    The present paper reports the theory of mechanoluminescence (ML) produced during cleavage of elemental and III-V semiconductors. It seems that the formation of crack-induced localized states is responsible for the ML excitation produced during the cleavage of elemental and III-V semiconductors. According to this mechanism, as the atoms are drawn away from each other in an advancing crack tip, the decreasing wave function overlap across the crack may result in localized states which is associated with increasing electron energy. If the energy of these localized states approach that of the conduction band, transition to the conduction band via tunnelling would be possible, creating minority carriers, and consequently the electron-hole recombination may give rise to mechanoluminescence. When an elemental or III-V semiconductor is cleaved, initially the ML intensity increases with time, attains a peak value I m at the time t m corresponding to completion of the cleavage of the semiconductor, and then it decreases following power law decay. Expressions are derived for the ML intensity I m corresponding to the peak of the ML intensity versus time curve and for the total ML intensity I T . It is shown that both I m and I T should increase directly with the area of the newly created surfaces of the crystals. From the measurements of the ML intensity, the velocity of crack propagation in material can be determined by using the relation v=H/t m

  13. CO2 laser pulse switching by optically excited semiconductors

    International Nuclear Information System (INIS)

    Silva, V.L. da.

    1986-01-01

    The construction and the study of a semi-conductor optical switch used for generating short infrared pulses and to analyse the semiconductor characteristics, are presented. The switch response time depends on semiconductor and control laser characteristics. The results obtained using a Ge switch controlled by N 2 , NdYag and Dye lasers are presented. The response time was 50 ns limited by Ge recombination time. The reflectivity increased from 7% to 59% using N 2 laser to control the switch. A simple model for semiconductor optical properties that explain very well the experimental results, is also presented. (author) [pt

  14. The Modulation Response of a Semiconductor Laser Amplifier

    DEFF Research Database (Denmark)

    Mørk, Jesper; Mecozzi, Antonio; Eisenstein, Gadi

    1999-01-01

    We present a theoretical analysis of the modulation response of a semiconductor laser amplifier. We find a resonance behavior similar to the well-known relaxation oscillation resonance found in semiconductor lasers, but of a different physical origin. The role of the waveguide (scattering) loss i...

  15. Modelling colliding-pulse mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Bischoff, Svend

    or to determine the optimum operation conditions. The purpose of this thesis is to elucidate some of the physics of interest in the field of semiconductor laser modelling, semiconductor optics and fiber optics. To be more specific we will investigate: The Colliding-Pulse Mode-Locked (CPM) Quantum Well (QW) laser...... diode; the excitonic semiconductor response for varying material thickness in the case of linear optics; and modulational instability of electromagnetic waves in media with spatially varying non-linearity....

  16. Subsurface dimerization in III-V semiconductor (001) surfaces

    DEFF Research Database (Denmark)

    Kumpf, C.; Marks, L.D.; Ellis, D.

    2001-01-01

    We present the atomic structure of the c(8 X 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group m atoms ...... takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 X 2) reconstructions of III-V semiconductors can be described in a unified model....

  17. Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

    International Nuclear Information System (INIS)

    Deri, R.J.

    2011-01-01

    Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a ∼ 200 (micro)s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

  18. Microstructure of III-N semiconductors related to their applications in optoelectronics

    Science.gov (United States)

    Leszczynski, M.; Czernetzki, R.; Sarzynski, M.; Krysko, M.; Targowski, G.; Prystawko, P.; Bockowski, M.; Grzegory, I.; Suski, T.; Domagala, J.; Porowski, S.

    2005-03-01

    There has been more than a decade since Shuji Nakamura from Japanese company Nichia constructed the first blue LED based on structure of (AlGaIn)N semiconductor and eight years since he made the first blue laser diode (LD). This work gives a survey on the current technological status with green/blue/violet/UV optoelectronics based on III-N semiconductors in relation with their microstructure. The following devices are presented: i) Low-power green and blue LEDs, ii) High-power LEDs targeting solid-state white lighting, iii) Low-power violet LDs for high definition DVD market, iv) High-power violet LDs, v) UV LEDs. The discussion will be focused on three main technological problems related to the microstructure of (AlGaIn)N layers in emitters based on III-N semiconductors: i) high density of dislocations in epitaxial layers of GaN on foreign substrates (sapphire, SiC, GaAs), ii), presence of strains, iii) atom segregation in ternary and quaternary compounds.

  19. Antisites in III-V semiconductors: Density functional theory calculations

    KAUST Repository

    Chroneos, A.

    2014-07-14

    Density functional based simulation, corrected for finite size effects, is used to investigate systematically the formation of antisite defects in III-V semiconductors (III=Al, Ga, and In and V=P, As, and Sb). Different charge states are modelled as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites (III V q) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites (V I I I q) show a consistent decrease in formation energies with increase in group III and group V covalent radii. In general, III V q defects dominate under III-rich conditions and V I I I q under V-rich conditions. Comparison with equivalent vacancy formation energy simulations shows that while antisite concentrations are always dominant under stoichiometric conditions, modest variation in growth or doping conditions can lead to a significantly higher concentration of vacancies. © 2014 AIP Publishing LLC.

  20. The astigmatism factor for semiconductor injection lasers

    International Nuclear Information System (INIS)

    Zhao Yiguang; Guo Changzhi

    1988-03-01

    The relations between the astigmatism factor and the waveguide structure, working conditions etc. were accurately calculated, using a method for deriving a self-consistent solution of the optical field equation and the carrier diffusion equation. Various theoretical models regarding the spontaneous emission factor were analyzed and compared. The results show that there is a difference between astigmatism factors of semiconductor lasers with different waveguide structures. W. Streifer's results, for a model having an invariable distribution of the complex refractive index, are larger by a factor of 6 to 80 than the accurate calculated value. K. Petermann's theory regarding the spontaneous emission factor is more appropriate than other theories. (author). 19 refs, 6 figs

  1. Below-bandgap photoreflection spectroscopy of semiconductor laser structures

    International Nuclear Information System (INIS)

    Sotnikov, Aleksandr E; Chernikov, Maksim A; Ryabushkin, Oleg A; Trubenko, P; Moshegov, N; Ovchinnikov, A

    2004-01-01

    A new method of modulated light reflection - below-bandgap photoreflection, is considered. Unlike the conventional photoreflection method, the proposed method uses optical pumping by photons of energy smaller than the bandgap of any layer of a semiconductor structure under study. Such pumping allows one to obtain the modulated reflection spectrum for all layers of the structure without excitation of photoluminescence. This method is especially promising for the study of wide-gap semiconductors. The results of the study of semiconductor structures used in modern high-power multimode semiconductor lasers are presented. (laser applications and other topics in quantum electronics)

  2. Ring cavity surface emitting semiconductor lasers

    International Nuclear Information System (INIS)

    Mujagic, E.

    2010-01-01

    Quantum cascade lasers (QCLs) are electrically driven semiconductor lasers, which have undergone a steady improvement since the first demonstration in 1994. These are now well established as reliable sources of coherent light in the mid-infrared (MIR) and terahertz (THz)range of the electromagnetic spectrum (3-300 μm). The rapid progress of this type of lasers is based on a high degree of freedom in tailoring the emission wavelength within a large variety of semiconductor heterostructure designs and materials. These properties have attracted the attention of various applications such as gas analysis, chemical sensing, spectral imaging and free-space telecommunication. In order to improve the selectivity, sensitivity and efficiency of today's sensor systems, high optical power, continuous wave and room temperature performance, single-mode operation and low divergence optical beams, are highly desirable qualities of a compact laser source in this field of research. Since all of these features cannot be provided by a conventional edge-emitting device at the same time, research has put focus on the development of surface emitting devices. Nowadays, the vertical cavity surface emitting lasers (VCSELs) are the most prominent representative for this type of light emitters. With its capability of producing narrow circular beams, the feasibility of two-dimensional arrays and on-wafer testing, such a coherent light source results in a reduction of the fabrication effort and production costs. Since the radiation in QCLs is strictly polarized normal to the epitaxial layer plane, fabrication of VCSELs based on QC structures is not viable. The subject of this work is the design and realization of 'ring cavity surface emitting lasers' (ring-CSELs). This type of lasers employs a circular ring cavity and a resonant distributed feedback (DFB) surface grating. Ring-CSELs were fabricated on the basis of MIR and THz QC structures, which cover a wavelength range from 4 μm to 93

  3. Progress in Group III nitride semiconductor electronic devices

    International Nuclear Information System (INIS)

    Hao Yue; Zhang Jinfeng; Shen Bo; Liu Xinyu

    2012-01-01

    Recently there has been a rapid domestic development in group III nitride semiconductor electronic materials and devices. This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the Key Program of the National Natural Science Foundation of China, which focuses on the research of the fundamental physical mechanisms of group III nitride semiconductor electronic materials and devices with the aim to enhance the crystal quality and electric performance of GaN-based electronic materials, develop new GaN heterostructures, and eventually achieve high performance GaN microwave power devices. Some remarkable progresses achieved in the program will be introduced, including those in GaN high electron mobility transistors (HEMTs) and metal—oxide—semiconductor high electron mobility transistors (MOSHEMTs) with novel high-k gate insulators, and material growth, defect analysis and material properties of InAlN/GaN heterostructures and HEMT fabrication, and quantum transport and spintronic properties of GaN-based heterostructures, and high-electric-field electron transport properties of GaN material and GaN Gunn devices used in terahertz sources. (invited papers)

  4. Surface passivation technology for III-V semiconductor nanoelectronics

    International Nuclear Information System (INIS)

    Hasegawa, Hideki; Akazawa, Masamichi

    2008-01-01

    The present status and key issues of surface passivation technology for III-V surfaces are discussed in view of applications to emerging novel III-V nanoelectronics. First, necessities of passivation and currently available surface passivation technologies for GaAs, InGaAs and AlGaAs are reviewed. Then, the principle of the Si interface control layer (ICL)-based passivation scheme by the authors' group is introduced and its basic characterization is presented. Ths Si ICL is a molecular beam epitaxy (MBE)-grown ultrathin Si layer inserted between III-V semiconductor and passivation dielectric. Finally, applications of the Si ICL method to passivation of GaAs nanowires and GaAs nanowire transistors and to realization of pinning-free high-k dielectric/GaAs MOS gate stacks are presented

  5. Organic / IV, III-V Semiconductor Hybrid Solar Cells

    Directory of Open Access Journals (Sweden)

    Pang-Leen Ong

    2010-03-01

    Full Text Available We present a review of the emerging class of hybrid solar cells based on organic-semiconductor (Group IV, III-V, nanocomposites, which states separately from dye synthesized, polymer-metal oxides and organic-inorganic (Group II-VI nanocomposite photovoltaics. The structure of such hybrid cell comprises of an organic active material (p-type deposited by coating, printing or spraying technique on the surface of bulk or nanostructured semiconductor (n-type forming a heterojunction between the two materials. Organic components include various photosensitive monomers (e.g., phtalocyanines or porphyrines, conjugated polymers, and carbon nanotubes. Mechanisms of the charge separation at the interface and their transport are discussed. Also, perspectives on the future development of such hybrid cells and comparative analysis with other classes of photovoltaics of third generation are presented.

  6. Key techniques for space-based solar pumped semiconductor lasers

    Science.gov (United States)

    He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

    2014-12-01

    In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

  7. On the use of the plasma in III-V semiconductor processing

    Energy Technology Data Exchange (ETDEWEB)

    Bruno, G.; Capezzuto, P.; Losurdo, M. [C.N.R.-Centro di Studio per la Chimica dei Plasmi Dipartimento di Chimica-Universita di Bari via Orabona, 4-70126 Bari (Italy)

    1996-03-01

    The manufacture of usable devices based on III-V semiconductor materials is a complex process requiring epilayer growth, anisotropic etching, defect passivation, surface oxidation and substrate preparation processes. The combination of plasma based methods with metalorganic chemical vapor deposition (MOCVD) offers some real advantages: {ital in} {ital situ} production and preactivation of PH{sub 3} and sample preparation using H-atom. The detailed understanding and use of the plasma (using mass spectrometry, optical emission spectroscopy, laser reflectance interferometry and spectroscopic ellipsometry) as applied to InP material is discussed. {copyright} {ital 1996 American Institute of Physics.}

  8. Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

    Science.gov (United States)

    Pierścińska, D.

    2018-01-01

    This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

  9. Theory of ferromagnetic (III,Mn)V semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Sinova, J.; Mašek, Jan; Kučera, Jan; MacDonald, A. H.

    2006-01-01

    Roč. 78, - (2006), s. 809-859 ISSN 0034-6861 R&D Projects: GA MŠk LC510; GA ČR GA202/05/0575 Grant - others:EPSRC(GB) GR/S81407/01; U.S. Department of Energy(US) DE-FG03-02ER45958; U.S. Office of Naval research(US) OMR-N000140610122 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * (III,Mn)V compounds Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 33.508, year: 2006

  10. High Power Mid-IR Semiconductor Lasers for LADAR

    National Research Council Canada - National Science Library

    Lester, Luke

    2003-01-01

    The growing need for antimonide-based, room temperature, 2-5 micrometers, semiconductor lasers for trace gas spectroscopy, ultra-low loss communication, infrared countermeasures, and ladar motivated this work...

  11. Spectroscopic characterization of III-V semiconductor nanomaterials

    Science.gov (United States)

    Crankshaw, Shanna Marie

    III-V semiconductor materials form a broad basis for optoelectronic applications, including the broad basis of the telecom industry as well as smaller markets for high-mobility transistors. In a somewhat analogous manner as the traditional silicon logic industry has so heavily depended upon process manufacturing development, optoelectronics often relies instead on materials innovations. This thesis focuses particularly on III-V semiconductor nanomaterials, detailed characterization of which is invaluable for translating the exhibited behavior into useful applications. Specifically, the original research described in these thesis chapters is an investigation of semiconductors at a fundamental materials level, because the nanostructures in which they appear crystallize in quite atypical forms for the given semiconductors. Rather than restricting the experimental approaches to any one particular technique, many different types of optical spectroscopies are developed and applied where relevant to elucidate the connection between the crystalline structure and exhibited properties. In the first chapters, for example, a wurtzite crystalline form of the prototypical zincblende III-V binary semiconductor, GaAs, is explored through polarization-dependent Raman spectroscopy and temperature-dependent photoluminescence, as well as second-harmonic generation (SHG). The altered symmetry properties of the wurtzite crystalline structure are particularly evident in the Raman and SHG polarization dependences, all within a bulk material realm. A rather different but deeply elegant aspect of crystalline symmetry in GaAs is explored in a separate study on zincblende GaAs samples quantum-confined in one direction, i.e. quantum well structures, whose quantization direction corresponds to the (110) direction. The (110) orientation modifies the low-temperature electron spin relaxation mechanisms available compared to the usual (001) samples, leading to altered spin coherence times explored

  12. DX centers in III-V semiconductors under hydrostatic pressure

    International Nuclear Information System (INIS)

    Wolk, J.A.

    1992-11-01

    DX centers are deep level defects found in some III-V semiconductors. They have persistent photoconductivity and large difference between thermal and optical ionization energies. Hydrostatic pressure was used to study microstructure of these defects. A new local vibrational mode (LVM) was observed in hydrostatically stressed, Si-doped GaAs. Corresponding infrared absorption peak is distinct from the Si Ga shallow donor LVM peak, which is the only other LVM peak observed in our samples, and is assigned to the Si DX center. Analysis of the relative intensities of the Si DX LVM and the Si shallow donor LVM peaks, combined with Hall effect and resistivity indicate that the Si DX center is negatively charged. Frequency of this new mode provides clues to the structure of this defect. A pressure induced deep donor level in S-doped InP was also discovered which has the properties of a DX center. Pressure at which the new defect becomes more stable than the shallow donor is 82 kbar. Optical ionization energy and energy dependence of the optical absorption cross section was measured for this new effect. Capture barrier from the conduction band into the DX state were also determined. That DX centers can be formed in InP by pressure suggests that DX states should be common in n-type III-V semiconductors. A method is suggested for predicting under what conditions these defects will be the most stable form of the donor impurity

  13. Quantum confined laser devices optical gain and recombination in semiconductors

    CERN Document Server

    Blood, Peter

    2015-01-01

    The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent...

  14. Hybrid organic semiconductor lasers for bio-molecular sensing.

    Science.gov (United States)

    Haughey, Anne-Marie; Foucher, Caroline; Guilhabert, Benoit; Kanibolotsky, Alexander L; Skabara, Peter J; Burley, Glenn; Dawson, Martin D; Laurand, Nicolas

    2014-01-01

    Bio-functionalised luminescent organic semiconductors are attractive for biophotonics because they can act as efficient laser materials while simultaneously interacting with molecules. In this paper, we present and discuss a laser biosensor platform that utilises a gain layer made of such an organic semiconductor material. The simple structure of the sensor and its operation principle are described. Nanolayer detection is shown experimentally and analysed theoretically in order to assess the potential and the limits of the biosensor. The advantage conferred by the organic semiconductor is explained, and comparisons to laser sensors using alternative dye-doped materials are made. Specific biomolecular sensing is demonstrated, and routes to functionalisation with nucleic acid probes, and future developments opened up by this achievement, are highlighted. Finally, attractive formats for sensing applications are mentioned, as well as colloidal quantum dots, which in the future could be used in conjunction with organic semiconductors.

  15. Efficiency of soft tissue incision with a novel 445-nm semiconductor laser.

    Science.gov (United States)

    Braun, Andreas; Kettner, Moritz; Berthold, Michael; Wenzler, Johannes-Simon; Heymann, Paul Günther Baptist; Frankenberger, Roland

    2018-01-01

    Using a 445-nm semiconductor laser for tissue incision, an effective cut is expected due to the special absorption properties of blue laser light in soft tissues. The aim of the present study was the histological evaluation of tissue samples after incision with a 445-nm diode laser. Forty soft tissue specimens were obtained from pork oral mucosa and mounted on a motorized linear translation stage. The handpiece of a high-frequency surgery device, a 970-nm semiconductor laser, and a 445-nm semiconductor laser were connected to the slide, allowing a constant linear movement (2 mm/s) and the same distance of the working tip to the soft tissue's surface. Four incisions were made each: (I) 970-nm laser with conditioned fiber tip, contact mode at 3-W cw; (II-III): 445-nm laser with non-conditioned fiber tip, contact mode at 2-W cw, and non-contact mode (1 mm) at 2 W; and (IV): high-frequency surgery device with straight working tip, 90° angulation, contact mode at 50 W. Histological analysis was performed after H&E staining of the embedded specimens at 35-fold magnification. The comparison of the incision depths showed a significant difference depending on the laser wavelength and the selected laser parameters. The highest incision depth was achieved with the 445-nm laser contact mode (median depth 0.61 mm, min 0.26, max 1.17, interquartile range 0.58) (p laser, a higher cutting efficiency can be expected when compared with a 970-nm diode laser and high-frequency surgery. Even the 445-nm laser application in non-contact mode shows clinically acceptable incision depths without signs of extensive soft tissue denaturation.

  16. Synchronization scenario of two distant mutually coupled semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mirasso, Claudio; Heil, Tilmann

    2004-01-01

    We present numerical and experimental investigations of the synchronization of the coupling-induced instabilities in two distant mutually coupled semiconductor lasers. In our experiments, two similar Fabry-Perot lasers are coupled via their coherent optical fields. Our theoretical framework is ba...

  17. Driver circuit for pulse modulation of a semiconductor laser

    International Nuclear Information System (INIS)

    Ueki, A.

    1975-01-01

    A pulse modulation driver circuit for a semiconductor laser is disclosed which discriminates among input pulse signals composed of binary codes to detect the occurrence of a pulse having a code of ''I'' following a pulse having a code of ''0''. Detection of this pattern is used to control the driver to increase either or both the width or peak value of the pulse having a code of 1. The effect of this is to eliminate a pattern effect in the light emitted by the semiconductor laser caused by an attenuation of the population inversion in the laser. (U.S.)

  18. Direct solar pumping of semiconductor lasers: A feasibility study

    Science.gov (United States)

    Anderson, Neal G.

    1992-01-01

    This report describes results of NASA Grant NAG-1-1148, entitled Direct Solar Pumping of Semiconductor Lasers: A Feasibility Study. The goals of this study were to provide a preliminary assessment of the feasibility of pumping semiconductor lasers in space with directly focused sunlight and to identify semiconductor laser structures expected to operate at the lowest possible focusing intensities. It should be emphasized that the structures under consideration would provide direct optical-to-optical conversion of sunlight into laser light in a single crystal, in contrast to a configuration consisting of a solar cell or storage battery electrically pumping a current injection laser. With external modulation, such lasers could perhaps be efficient sources for intersatellite communications. We proposed specifically to develop a theoretical model of semiconductor quantum-well lasers photopumped by a broadband source, test it against existing experimental data where possible, and apply it to estimating solar pumping requirements and identifying optimum structures for operation at low pump intensities. These tasks have been accomplished, as described in this report of our completed project. The report is organized as follows: Some general considerations relevant to the solar-pumped semiconductor laser problem are discussed in Section 2, and the types of structures chosen for specific investigation are described. The details of the laser model we developed for this work are then outlined in Section 3. In Section 4, results of our study are presented, including designs for optimum lattice-matched and strained-layer solar-pumped quantum-well lasers and threshold pumping estimates for these structures. It was hoped at the outset of this work that structures could be identified which could be expected to operate continuously at solar photoexcitation intensities of several thousand suns, and this indeed turned out to be the case as described in this section. Our project is

  19. Semiconductor Laser Multi-Spectral Sensing and Imaging

    Directory of Open Access Journals (Sweden)

    Han Q. Le

    2010-01-01

    Full Text Available Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO. These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

  20. Semiconductor laser multi-spectral sensing and imaging.

    Science.gov (United States)

    Le, Han Q; Wang, Yang

    2010-01-01

    Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO). These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

  1. Characterization of Hydrogen Complex Formation in III-V Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Williams, Michael D

    2006-09-28

    Atomic hydrogen has been found to react with some impurity species in semiconductors. Hydrogenation is a methodology for the introduction of atomic hydrogen into the semiconductor for the express purpose of forming complexes within the material. Efforts to develop hydrogenation as an isolation technique for AlGaAs and Si based devices failed to demonstrate its commercial viability. This was due in large measure to the low activation energies of the formed complexes. Recent studies of dopant passivation in long wavelength (0.98 - 1.55m) materials suggested that for the appropriate choice of dopants much higher activation energies can be obtained. This effort studied the formation of these complexes in InP, This material is extensively used in optoelectronics, i.e., lasers, modulators and detectors. The experimental techniques were general to the extent that the results can be applied to other areas such as sensor technology, photovoltaics and to other material systems. The activation energies for the complexes have been determined and are reported in the scientific literature. The hydrogenation process has been shown by us to have a profound effect on the electronic structure of the materials and was thoroughly investigated. The information obtained will be useful in assessing the long term reliability of device structures fabricated using this phenomenon and in determining new device functionalities.

  2. Development of the power control system for semiconductor lasers

    International Nuclear Information System (INIS)

    Kim, Kwang Suk; Kim, Cheol Jung

    1997-12-01

    For the first year plan of this program, we developed the power control system for semiconductor lasers. We applied the high-current switching mode techniques to fabricating a power control system. Then, we investigated the direct side pumping techniques with GaA1As diode laser bars to laser crystal without pumping optics. We obtained 0.5W average output power from this DPSSL. (author). 54 refs., 3 tabs., 18 figs

  3. Methods for enhancing P-type doping in III-V semiconductor films

    Science.gov (United States)

    Liu, Feng; Stringfellow, Gerald; Zhu, Junyi

    2017-08-01

    Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

  4. III - V semiconductor structures for biosensor and molecular electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Luber, S M

    2007-01-15

    The present work reports on the employment of III-V semiconductor structures to biosensor and molecular electronics applications. In the first part a sensor based on a surface-near two dimensional electron gas for a use in biological environment is studied. Such a two dimensional electron gas inherently forms in a molecular beam epitaxy (MBE) grown, doped aluminum gallium arsenide - gallium arsenide (AlGaAs-GaAs) heterostructure. Due to the intrinsic instability of GaAs in aqueous solutions the device is passivated by deposition of a monolayer of 4'-substituted mercaptobiphenyl molecules. The influence of these molecules which bind to the GaAs via a sulfur group is investigated by Kelvin probe measurements in air. They reveal a dependence of GaAs electron affinity on the intrinsic molecular dipole moment of the mercaptobiphenyls. Furthermore, transient surface photovoltage measurements are presented which demonstrate an additional influence of mercaptobiphenyl chemisorption on surface carrier recombination rates. As a next step, the influence of pH-value and salt concentration upon the sensor device is discussed based on the results obtained from sensor conductance measurements in physiological solutions. A dependence of the device surface potential on both parameters due to surface charging is deduced. Model calculations applying Poisson-Boltzmann theory reveal as possible surface charging mechanisms either the adsorption of OH- ions on the surface, or the dissociation of OH groups in surface oxides. A comparison between simulation settings and physical device properties indicate the OH- adsorption as the most probable mechanism. In the second part of the present study the suitability of MBE grown III-V semiconductor structures for molecular electronics applications is examined. In doing so, a method to fabricate nanometer separated, coplanar, metallic electrodes based on the cleavage of a supporting AlGaAs-GaAs heterostructure is presented. This is followed by a

  5. III - V semiconductor structures for biosensor and molecular electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Luber, S.M.

    2007-01-15

    The present work reports on the employment of III-V semiconductor structures to biosensor and molecular electronics applications. In the first part a sensor based on a surface-near two dimensional electron gas for a use in biological environment is studied. Such a two dimensional electron gas inherently forms in a molecular beam epitaxy (MBE) grown, doped aluminum gallium arsenide - gallium arsenide (AlGaAs-GaAs) heterostructure. Due to the intrinsic instability of GaAs in aqueous solutions the device is passivated by deposition of a monolayer of 4'-substituted mercaptobiphenyl molecules. The influence of these molecules which bind to the GaAs via a sulfur group is investigated by Kelvin probe measurements in air. They reveal a dependence of GaAs electron affinity on the intrinsic molecular dipole moment of the mercaptobiphenyls. Furthermore, transient surface photovoltage measurements are presented which demonstrate an additional influence of mercaptobiphenyl chemisorption on surface carrier recombination rates. As a next step, the influence of pH-value and salt concentration upon the sensor device is discussed based on the results obtained from sensor conductance measurements in physiological solutions. A dependence of the device surface potential on both parameters due to surface charging is deduced. Model calculations applying Poisson-Boltzmann theory reveal as possible surface charging mechanisms either the adsorption of OH- ions on the surface, or the dissociation of OH groups in surface oxides. A comparison between simulation settings and physical device properties indicate the OH- adsorption as the most probable mechanism. In the second part of the present study the suitability of MBE grown III-V semiconductor structures for molecular electronics applications is examined. In doing so, a method to fabricate nanometer separated, coplanar, metallic electrodes based on the cleavage of a supporting AlGaAs-GaAs heterostructure is presented. This is followed

  6. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

    2002-01-01

    -power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

  7. Laser apparatus for surgery and force therapy based on high-power semiconductor and fibre lasers

    International Nuclear Information System (INIS)

    Minaev, V P

    2005-01-01

    High-power semiconductor lasers and diode-pumped lasers are considered whose development qualitatively improved the characteristics of laser apparatus for surgery and force therapy, extended the scope of their applications in clinical practice, and enhanced the efficiency of medical treatment based on the use of these lasers. The characteristics of domestic apparatus are presented and their properties related to the laser emission wavelength used in them are discussed. Examples of modern medical technologies based on these lasers are considered. (invited paper)

  8. Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications

    Science.gov (United States)

    Al-Kabi, Sattar H. Sweilim

    Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. The GeSn films were grown on Ge-buffered Si substrates in a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. A systematic study was done for thin GeSn films (thickness 400 nm) with Sn composition 5 to 17.5%. The room temperature photoluminescence (PL) spectra were measured that showed a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Strong PL intensity and low defect density indicated high material quality. Moreover, the PL study of n-doped samples showed bandgap narrowing compared to the unintentionally p-doped (boron) thin films with similar Sn compositions. Finally, optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 mum were demonstrated using high-quality GeSn films with Sn compositions up to 17.5%. The achieved maximum Sn composition of 17.5% broke the acknowledged Sn incorporation limit using similar deposition chemistry. The highest lasing temperature was measured at 180 K with an active layer thickness as thin as 270 nm. The unprecedented lasing performance is due to the achievement of high material quality and a robust fabrication process. The results reported in this work show a major advancement towards Si-based electrically pumped mid

  9. Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser

    International Nuclear Information System (INIS)

    Garcia, E.; Soto, H.; Marquez, H.; Valles V, N.

    2000-01-01

    A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

  10. Heteroclinic dynamics of coupled semiconductor lasers with optoelectronic feedback.

    Science.gov (United States)

    Shahin, S; Vallini, F; Monifi, F; Rabinovich, M; Fainman, Y

    2016-11-15

    Generalized Lotka-Volterra (GLV) equations are important equations used in various areas of science to describe competitive dynamics among a population of N interacting nodes in a network topology. In this Letter, we introduce a photonic network consisting of three optoelectronically cross-coupled semiconductor lasers to realize a GLV model. In such a network, the interaction of intensity and carrier inversion rates, as well as phases of laser oscillator nodes, result in various dynamics. We study the influence of asymmetric coupling strength and frequency detuning between semiconductor lasers and show that inhibitory asymmetric coupling is required to achieve consecutive amplitude oscillations of the laser nodes. These studies were motivated primarily by the dynamical models used to model brain cognitive activities and their correspondence with dynamics obtained among coupled laser oscillators.

  11. Gain and Index Dynamics in Semiconductor Lasers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    Semiconductor optical amplifiers (SOAs) provide ultrafast, i.e. broadband components for optical communication systems. They enter not only as signal generators and amplifiers, but also as nonlinear elements for ultrafast signal processing such as wavelength conversion, switching, and regeneration...... changed character from bulk semiconductor to quantum wells and most recently to quantum dots. By quantum confinement of the carriers, the light-matter interactions can be significantly modified and the optical properties, including dynamics, can be engineered to match the required functionalities...

  12. Ultrafast dynamics and laser action of organic semiconductors

    CERN Document Server

    Vardeny, Zeev Valy

    2009-01-01

    Spurred on by extensive research in recent years, organic semiconductors are now used in an array of areas, such as organic light emitting diodes (OLEDs), photovoltaics, and other optoelectronics. In all of these novel applications, the photoexcitations in organic semiconductors play a vital role. Exploring the early stages of photoexcitations that follow photon absorption, Ultrafast Dynamics and Laser Action of Organic Semiconductors presents the latest research investigations on photoexcitation ultrafast dynamics and laser action in pi-conjugated polymer films, solutions, and microcavities.In the first few chapters, the book examines the interplay of charge (polarons) and neutral (excitons) photoexcitations in pi-conjugated polymers, oligomers, and molecular crystals in the time domain of 100 fs-2 ns. Summarizing the state of the art in lasing, the final chapters introduce the phenomenon of laser action in organics and cover the latest optoelectronic applications that use lasing based on a variety of caviti...

  13. Narrow-linewidth Si/III-V lasers: A study of laser dynamics and nonlinear effects

    Science.gov (United States)

    Vilenchik, Yaakov Yasha

    Narrow-linewidth lasers play an important role in a wide variety of applications, from sensing and spectroscopy to optical communication and on-chip clocks. Current narrow-linewidth systems are usually implemented in doped fibers and are big, expensive, and power-hungry. Semiconductor lasers compete favorably in size, cost, and power consumption, but their linewidth is historically limited to the sub-MHz regime. However, it has been recently demonstrated that a new design paradigm, in which the optical energy is stored away from the active region in a composite high-Q resonator, has the potential to dramatically improve the coherence of the laser. This work explores this design paradigm, as applied on the hybrid Si/III-V platform. It demonstrates a record sub-KHz white-noise-floor linewidth. It further shows, both theoretically and experimentally, that this strategy practically eliminates Henry's linewidth enhancement by positioning a damped relaxation resonance at frequencies as low as 70 MHz, yielding truly quantum limited devices at frequencies of interest. In addition to this empirical contribution, this work explores the limits of performance of this platform. Here, the effect of two-photon-absorption and free-carrier-absorption are analyzed, using modified rate equations and Langevin force approach. The analysis predicts that as the intra-cavity field intensity builds up in the high-Q resonator, non-linear effects cause a new domain of performance-limiting factors. Steady-state behavior, laser dynamics, and frequency noise performance are examined in the context of this unique platform, pointing at the importance of nonlinear effects. This work offers a theoretical model predicting laser performance in light of nonlinear effects, obtaining a good agreement with experimental results from fabricated high-Q Si/III-V lasers. In addition to demonstrating unprecedented semiconductor laser performance, this work establishes a first attempt to predict and demonstrate

  14. Return-map for semiconductor lasers with optical feedback

    DEFF Research Database (Denmark)

    Mørk, Jesper; Tromborg, Bjarne; Sabbatier, H.

    1999-01-01

    It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation of the phe......It is well known that a semiconductor laser exposed to moderate optical feedback and biased near threshold exhibits the phenomenon of low-frequency intensity fluctuations (LFF). While this behavior can be numerically simulated using the so-called Lang-Kobayshi model, the interpretation...

  15. Optically pumped semiconductor lasers for atomic and molecular physics

    Science.gov (United States)

    Burd, S.; Leibfried, D.; Wilson, A. C.; Wineland, D. J.

    2015-03-01

    Experiments in atomic, molecular and optical (AMO) physics rely on lasers at many different wavelengths and with varying requirements on spectral linewidth, power and intensity stability. Optically pumped semiconductor lasers (OPSLs), when combined with nonlinear frequency conversion, can potentially replace many of the laser systems currently in use. We are developing a source for laser cooling and spectroscopy of Mg+ ions at 280 nm, based on a frequency quadrupled OPSL with the gain chip fabricated at the ORC at Tampere Univ. of Technology, Finland. This OPSL system could serve as a prototype for many other sources used in atomic and molecular physics.

  16. Structure of metal-rich (001) surfaces of III-V compound semiconductors

    DEFF Research Database (Denmark)

    Kumpf, C.; Smilgies, D.; Landemark, E.

    2001-01-01

    The atomic structure of the group-III-rich surface of III-V semiconductor compounds has been under intense debate for many years, yet none of the models agrees with the experimental data available. Here we present a model for the three-dimensional structure of the (001)-c(8x2) reconstruction on In......(8 x 2) reconstructions of III-V semiconductor surfaces contain the same essential building blocks....

  17. Integrated semiconductor twin-microdisk laser under mutually optical injection

    Energy Technology Data Exchange (ETDEWEB)

    Zou, Ling-Xiu; Liu, Bo-Wen; Lv, Xiao-Meng; Yang, Yue-De; Xiao, Jin-Long; Huang, Yong-Zhen, E-mail: yzhuang@semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2015-05-11

    We experimentally study the characteristics of an integrated semiconductor twin-microdisk laser under mutually optical injection through a connected optical waveguide. Based on the lasing spectra, four-wave mixing, injection locking, and period-two oscillation states are observed due to the mutually optical injection by adjusting the injected currents applied to the two microdisks. The enhanced 3 dB bandwidth is realized for the microdisk laser at the injection locking state, and photonic microwave is obtained from the electrode of the microdisk laser under the period-two oscillation state. The plentifully dynamical states similar as semiconductor lasers subject to external optical injection are realized due to strong optical interaction between the two microdisks.

  18. Management of gingival hyperpigmentation by semiconductor diode laser

    Directory of Open Access Journals (Sweden)

    Geeti Gupta

    2011-01-01

    Full Text Available Gingival hyperpigmentation is caused by excessive deposition of melanin in the basal and suprabasal cell layers of the epithelium. Although melanin pigmentation of the gingiva is completely benign, cosmetic concerns are common, particularly in patients having a very high smile line (gummy smile. Various depigmentation techniques have been employed, such as scalpel surgery, gingivectomy, gingivectomy with free gingival autografting, cryosurgery, electrosurgery, chemical agents such as 90% phenol and 95% alcohol, abrasion with diamond burs, Nd:YAG laser, semiconductor diode laser, and CO 2 laser. The present case report describes simple and effective depigmentation technique using semiconductor diode laser surgery - for gingival depigmentation, which have produced good results with patient satisfaction.

  19. Monte-Carlo simulation of crystallographical pore growth in III-V-semiconductors

    International Nuclear Information System (INIS)

    Leisner, Malte; Carstensen, Juergen; Foell, Helmut

    2011-01-01

    The growth of crystallographical pores in III-V-semiconductors can be understood in the framework of a simple model, which is based on the assumption that the branching of pores is proportional to the current density at the pore tips. The stochastic nature of this model allows its implementation into a three-dimensional Monte-Carlo-simulation of pore growth. The simulation is able to reproduce the experimentally observed crysto pore structures in III-V-semiconductors in full quantitative detail. The different branching probabilities for different semiconductors, as well as doping levels, can be deduced from the specific passivation behavior of the semiconductor-electrolyte-interface at the pore tips.

  20. The role of In in III-nitride ternary semiconductors

    CERN Multimedia

    Redondo cubero, A

    This proposal aims to study the role of In in the outstanding efficiency of luminescent devices based on group III-nitride ternary semiconductors. To study the microscopic environments of In in GaInN and AlInN, Perturbed Angular Correlation (PAC) experiments will be performed using the PAC-probes $^{111m}$Cd($^{111}$Cd), $^{115}$Cd($^{115}$In) and $^{117}$Cd($^{117}$In). Temperature dependent PAC measurements using the $^{111}$In($^{111}$Cd) probe indicated that In in GaN and AlN forms a complex with a defect, possibly a nitrogen vacancy (V$_{N}$), which is stable up to high temperatures and might be involved in the luminescence mechanisms. Analysing these results two questions arose: \\\\ \\\\1. Does the fact that the actual measurement is performed with the daughter nucleus $^{111}$Cd (being an acceptor) influence the probe-defect interaction? This question can be answered by performing measurements with the complementary probe $^{117}$Cd($^{117}$In). \\\\ \\\\ 2. What is the significance of $\\textit{a...

  1. Low-confinement high-power semiconductor lasers

    NARCIS (Netherlands)

    Buda, M.

    1999-01-01

    This thesis presents the results of studies related to optimisation of high power semiconductor laser diodes using the low confinement concept. This implies a different approach in designing the transversal layer structure before growth and in processing the wafer after growth, for providing the

  2. Optical trapping with Bessel beams generated from semiconductor lasers

    International Nuclear Information System (INIS)

    Sokolovskii, G S; Dudelev, V V; Losev, S N; Soboleva, K K; Deryagin, A G; Kuchinskii, V I; Sibbett, W; Rafailov, E U

    2014-01-01

    In this paper, we study generation of Bessel beams from semiconductor lasers with high beam propagation parameter M 2 and their utilization for optical trapping and manipulation of microscopic particles including living cells. The demonstrated optical tweezing with diodegenerated Bessel beams paves the way to replace their vibronic-generated counterparts for a range of applications towards novel lab-on-a-chip configurations

  3. Semiconductor Mode-Locked Lasers for Optical Communication Systems

    DEFF Research Database (Denmark)

    Yvind, Kresten

    2003-01-01

    The thesis deals with the design and fabrication of semiconductor mode-locked lasers for use in optical communication systems. The properties of pulse sources and characterization methods are described as well as requirements for application in communication systems. Especially, the importance of...

  4. Dynamics of laterally coupled semiconductor lasers: transition to chaos

    NARCIS (Netherlands)

    Yousefi, M.; Barsella, A.; Lenstra, D.; Lenstra, D.; Morthier, G.; Erneux, T.; Pessa, M.

    2004-01-01

    A method for the investigation of the dynamics of two semiconductor lasers, grown side-by-side on the same wafer to enhance the lateral optical coupling, is presented. Using steady state analysis, parameter regimes of relevant dynamics are identified. This is completed by a spectral analysis, were

  5. Material Engineering for Monolithic Semiconductor Mode-Locked Lasers

    DEFF Research Database (Denmark)

    Kulkova, Irina

    This thesis is devoted to the materials engineering for semiconductor monolithic passively mode-locked lasers (MLLs) as a compact energy-efficient source of ultrashort optical pulses. Up to the present day, the achievement of low-noise sub-picosecond pulse generation has remained a challenge...

  6. Mathematical modeling of thermal runaway in semiconductor laser operation

    NARCIS (Netherlands)

    Smith, W.R.

    2000-01-01

    A mathematical model describing the coupling of electrical, optical and thermal effects in semiconductor lasers is introduced. Through a systematic asymptotic expansion, the governing system of differential equations is reduced to a single second-order boundary value problem. This highly nonlinear

  7. Absolute Distance Measurements with Tunable Semiconductor Laser

    Czech Academy of Sciences Publication Activity Database

    Mikel, Břetislav; Číp, Ondřej; Lazar, Josef

    T118, - (2005), s. 41-44 ISSN 0031-8949 R&D Projects: GA AV ČR(CZ) IAB2065001 Keywords : tunable laser * absolute interferometer Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.661, year: 2004

  8. Magnetooptical investigations on ferromagnetic III-V-semiconductors; Magnetooptische Untersuchungen an ferromagnetischen III-V-Halbleitern

    Energy Technology Data Exchange (ETDEWEB)

    Winter, Andreas

    2009-07-23

    Magnetooptical Kerr effect (MOKE) and Magnetic Circular Dichroism (MCD) have been used to investigate magnetic as well as bandstructure properties of diluted magnetic III-V-semiconductors containing Mn. In these ferromagnetic systems it has been found that the strength of the observed effects depends linearly on the magnetization of the samples with no influence of the external magnetic field. The magnetooptical effects allowed the recording of hysteresis loops of GaMnAs, GaMnSb, InMnAs and InMnSb samples for different temperatures and in the case of GaMnAs also for different alignments of the external magnetic field with respect to the easy axis of magnetization. The Stoner-Wohlfahrt-Model has been used to describe the resulting shapes of the loops yielding the magnetic anisotropy parameters of the samples. For magnetically saturated samples, spectra of MOKE and MCD have been recorded. Contrary to pure III-V-semiconductors, which exhibit lots of sharp resonances due to interband transitions between Landau levels, III-Mn-V-semi-conductors how only very few (or just one) considerably broad resonance(s). Their spectral position(s) do(es) neither depend upon the magnetic field as it would be the case for pure III-V-semiconductors nor the magnetization. Only the amplitude increases linearly with the magnetization. Utilizing a kp-theory it has been possible to describe the observed dependencies. Valence- and conduction-band are split into Landau levels by the external magnetic field and, in addition to the Zeeman-effect, the spin-levels are split by the exchange interaction between the localized electrons of the Mn ions and the free carriers which is proportional to the magnetization of the samples. This splitting is much bigger than the Landau level splitting. Due to an inhomogeneous distribution of the Mn ions and due to the high carrier density the Landau levels are strongly broadened and their structure is not observable. Owing to the high carrier-concentration in

  9. Electrically pumped edge-emitting photonic bandgap semiconductor laser

    Science.gov (United States)

    Lin, Shawn-Yu; Zubrzycki, Walter J.

    2004-01-06

    A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

  10. Radiation effects in semiconductor laser diode arrays

    International Nuclear Information System (INIS)

    Carson, R.F.

    1988-01-01

    The effects of radiation events are important for many of the present and future applications that involve optoelectronic components. Laser diodes show a strong resistance to degradation by gamma rays, prompt x-rays and (to a lesser extent), neutrons. This is due to the short carrier lifetime that is associated with stimulated emission and the high current injection conditions that are present in these devices. Radiation-resistant properties should carry over to many of the more recently developed devices such as multi-stripe array and broad area laser diodes. There are, however, additional considerations for radiation tolerance that are introduced by these devices. Arrays and other high power laser diodes have larger active region volumes than lower power single stripe devices. In addition, evanescent field coupling between stripes, the material quality available from newer MOCVD epitaxial growth techniques, and stripe definition methods may all influence the radiation tolerance of the high power laser diode devices. Radiation tests have been conducted on various GaAs-GaAlAs laser diode array and broad area devices. Tests involving total gamma dose have indicated that high power laser diodes and arrays have small degradations in light power output with current input after 4 MRad(Si) of radiation from a Co 60 source. Additional test results involving flash x-rays indicate that high power diode lasers and arrays are tolerant to 10 12 rads(Si)/sec, when observed on microsecond or millisecond time scales. High power diode laser devices were also irradiated with neutrons to a fluence of 10 14 neutrons/cm 2 with some degradation of threshold current level

  11. A proposal for Coulomb assisted laser cooling of piezoelectric semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Nia, Iman Hassani; Mohseni, Hooman, E-mail: hmohseni@ece.northwestern.edu [Bio-Inspired Sensors and Optoelectronics Laboratory (BISOL), Department of Electrical Engineering, Northwestern University, Evanston, Illinois 60208 (United States)

    2014-07-28

    Anti-Stokes laser cooling of semiconductors as a compact and vibration-free method is very attractive. While it has achieved significant milestones, increasing its efficiency is highly desirable. The main limitation is the lack of the pristine material quality with high luminescence efficiency. Here, we theoretically demonstrate that the Coulomb interaction among electrons and holes in piezoelectric heterostructures could lead to coherent damping of acoustic phonons; rendering a significantly higher efficiency that leads to the possibility of cooling a broad range of semiconductors.

  12. Mixing of III-V compound semiconductor superlattices

    International Nuclear Information System (INIS)

    Mei, Ping.

    1989-01-01

    In this work, the methods as well as mechanisms of III-V compound superlattice mixing are discussed, with particular attention on the AlGaAs based superlattice system. Comparative studies of ion-induced mixing showed two distinct effects resulting from ion implantation followed by a thermal anneal; i.e. collisional mixing and impurity induced mixing. It was found that Ga and As ion induced mixing are mainly due to the collisional effect, where the extent of the mixing can be estimated theoretically, with the parameters of ion mass, incident energy and the implant dose. The impurity effect was dominant for Si, Ge, Be, Zn and Te. Quantitative studies of impurity induced mixing have been conducted on samples doped with Si or Te during the growth process. It was discovered that Si induced AlGaAs superlattice mixing yielded an activation energy of approximately 4 eV for the Al diffusion coefficient with a high power law dependence of the prefactor on the Si concentration. In the Te doped AlGaAs superlattice the Al diffusion coefficient exhibited an activation energy of ∼3.0 eV, with a prefactor approximately proportional to the Te concentration. These results are of importance in examining the current diffusion models. Zn and Si induced InP/InGaAs superlattice mixing are examined. It was found that Zn predominantly induces cation interdiffusion, while Si induces comparable cation and anion interdiffusion. In addition, widely dispersed Zn rich islands form with Zn residing in the InP layers in the form of Zn 3 P 2 . With unstrained starting material, the layer bandgap disparity increases due to mixing induced strain, while in the Si diffused sample the mixed region would be expected to exhibit bandgaps intermediate between those of the original layers. Semiconductor superlattice mixing shows technological potential for optoelectronic device fabrication

  13. The history of laser conditions in semiconductors

    International Nuclear Information System (INIS)

    Bernard, Maurice

    2012-01-01

    Fifty years ago, summer 1962: in three independent laboratories of the US East Coast, almost simultaneously, IR coherent light was for the first time emitted from semiconductor crystals. No theory was associated with these results. Two years before, Georges Duraffourg and Maurice Bernard had readily proved that for such phenomenon to occur requires that a relation is fulfilled between quasi-Fermi levels and photon energy: F n − F p > hν. This paper presents an overview of this important period of history and the events that occurred around that time. (paper)

  14. Theoretical models of ferromagnetic III-V semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Sinova, J.; Kučera, Jan; MacDonald, A. H.

    2003-01-01

    Roč. 3, - (2003), s. 461-464 ISSN 1567-1739. [Mesoscopic Electronics COST Workshop. Catania, 16.10.2002-19.10.2002] Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * diluted magnetic semiconductors * magneto-transport Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.117, year: 2002

  15. Method for making graded I-III-VI.sub.2 semiconductors and solar cell obtained thereby

    Science.gov (United States)

    Devaney, Walter E.

    1987-08-04

    Improved cell photovoltaic conversion efficiencies are obtained by the simultaneous elemental reactive evaporation process of Mickelsen and Chen for making semiconductors by closer control of the evaporation rates and substrate temperature during formation of the near contact, bulk, and near junction regions of a graded I-III-VI.sub.2, thin film, semiconductor, such as CuInSe.sub.2 /(Zn,Cd)S or another I-III-VI.sub.2 /II-VI heterojunction.

  16. Singly-resonant sum frequency generation of visible light in a semiconductor disk laser

    DEFF Research Database (Denmark)

    Andersen, Martin Thalbitzer; Schlosser, P.J.; Hastie, J.E.

    2009-01-01

    In this paper a generic approach for visible light generation is presented. It is based on sum frequency generation between a semiconductor disk laser and a solid-state laser, where the frequency mixing is achieved within the cavity of the semiconductor disk laser using a singlepass of the solid......-state laser light. This exploits the good beam quality and high intra-cavity power present in the semiconductor disk laser to achieve high conversion efficiency. Combining sum frequency mixing and semiconductor disk lasers in this manner allows in principle for generation of any wavelength within the visible...

  17. Review on the dynamics of semiconductor nanowire lasers

    Science.gov (United States)

    Röder, Robert; Ronning, Carsten

    2018-03-01

    Semiconductor optoelectronic devices have contributed tremendously to the technological progress in the past 50-60 years. Today, they also play a key role in nanophotonics stimulated by the inherent limitations of electronic integrated circuits and the growing demand for faster communications on chip. In particular, the field of ‘nanowire photonics’ has emerged including the search for coherent light sources with a nano-scaled footprint. The past decade has been dedicated to find suitable semiconductor nanowire (NW) materials for such nanolasers. Nowadays, such NW lasers consistently work at room temperature covering a huge spectral range from the ultraviolet down to the mid-infrared depending on the band gap of the NW material. Furthermore, first approaches towards the modification and optimization of such NW laser devices have been demonstrated. The underlying dynamics of the electronic and photonic NW systems have also been studied very recently, as they need to be understood in order to push the technological relevance of nano-scaled coherent light sources. Therefore, this review will first present novel measurement approaches in order to study the ultrafast temporal and optical mode dynamics of individual NW laser devices. Furthermore, these fundamental new insights are reviewed and deeply discussed towards the efficient control and adjustment of the dynamics in semiconductor NW lasers.

  18. Synchronous characterization of semiconductor microcavity laser beam.

    Science.gov (United States)

    Wang, T; Lippi, G L

    2015-06-01

    We report on a high-resolution double-channel imaging method used to synchronously map the intensity- and optical-frequency-distribution of a laser beam in the plane orthogonal to the propagation direction. The synchronous measurement allows us to show that the laser frequency is an inhomogeneous distribution below threshold, but that it becomes homogeneous across the fundamental Gaussian mode above threshold. The beam's tails deviations from the Gaussian shape, however, are accompanied by sizeable fluctuations in the laser wavelength, possibly deriving from manufacturing details and from the influence of spontaneous emission in the very low intensity wings. In addition to the synchronous spatial characterization, a temporal analysis at any given point in the beam cross section is carried out. Using this method, the beam homogeneity and spatial shape, energy density, energy center, and the defects-related spectrum can also be extracted from these high-resolution pictures.

  19. Semiconductor Laser Wind Lidar for Turbine Control

    DEFF Research Database (Denmark)

    Hu, Qi

    This thesis describes an experimentally oriented study of continuous wave (CW) coherent Doppler lidar system design. The main application is remote wind sensing for active wind turbine control using nacelle mounted lidar systems; and the primary focus is to devise an industrial instrument that can...... historical overview within the topic of wind lidar systems. Both the potential and the challenges of an industrialized wind lidar has been addressed here. Furthermore, the basic concept behind the heterodyne detection and a brief overview of the lidar signal processing is explained; and a simple...... investigation of the telescope truncation and lens aberrations is conducted, both numerically and experimentally. It is shown that these parameters dictate the spatial resolution of the lidar system, and have profound impact on the SNR. In this work, an all-semiconductor light source is used in the lidar design...

  20. On increasing the efficiency of a streamer semiconductor laser

    International Nuclear Information System (INIS)

    Rusakov, K I; Parashchuk, V V

    2007-01-01

    The influence of intense electric and optical fields produced by a streamer discharge in wide-gap semiconductors on their spectroscopic properties is studied. The effect is manifested in the reversible change of the luminescence parameters of the active medium. Methods are proposed for increasing the service life and efficiency of a streamer laser in limiting regimes, which are based on the use of semiconductor protective layers of a certain crystallographic orientation and a crystal microrelief with the size of elements of the order of the wavelength of light. Streamer emission was observed and studied in new promising Eu:CaGa 2 S 4 and Eu:Ca 4 Ga 2 S 7 materials. (lasers)

  1. Final Report: High Power Semiconductor Laser Sources,

    Science.gov (United States)

    1989-01-01

    Mittelstein, Yasuhiko Arakawa, ) Anders Larssonb) and Amnon Yariv California Institute of Technology, Pasadena, California 91 125~412 (Received 7 July...Electronics and Commu- nication Engineers of Japan. He is a member of the Institute of Electronics Yasuhiko Arakawa S󈨑-M󈨔) was born in Ai- and...Gain, Modulation Response, and Spectral Linewidth in AlGaAs Quantum Well Lasers YASUHIKO ARAKAWA. MEMBER, IEEE. AND AMNON YARIV. FELLOW. IEEE Abstract

  2. Nonlinear gain suppression in semiconductor lasers due to carrier heating

    International Nuclear Information System (INIS)

    Willatzen, M.; Uskov, A.; Moerk, J.; Olesen, H.; Tromborg, B.; Jauho, A.P.

    1991-01-01

    We present a simple model for carrier heating in semiconductor lasers, from which the temperature dynamics of the electron and hole distributions can be calculated. Analytical expressions for two new contributions to the nonlinear gain coefficient ε are derived, which reflect carrier heating due to stimulated emission and free carrier absorption. In typical cases, carrier heating and spectral holeburning are found to give comparable contributions to nonlinear gain suppression. The results are in good agreement with recent measurements on InGaAsP laser diodes. (orig.)

  3. Semiconductor ring lasers coupled by a single waveguide

    Science.gov (United States)

    Coomans, W.; Gelens, L.; Van der Sande, G.; Mezosi, G.; Sorel, M.; Danckaert, J.; Verschaffelt, G.

    2012-06-01

    We experimentally and theoretically study the characteristics of semiconductor ring lasers bidirectionally coupled by a single bus waveguide. This configuration has, e.g., been suggested for use as an optical memory and as an optical neural network motif. The main results are that the coupling can destabilize the state in which both rings lase in the same direction, and it brings to life a state with equal powers at both outputs. These are both undesirable for optical memory operation. Although the coupling between the rings is bidirectional, the destabilization occurs due to behavior similar to an optically injected laser system.

  4. Field-glass range finder with a semiconductor laser

    Science.gov (United States)

    Iwanejko, Leszek; Jankiewicz, Zdzislaw; Jarocki, Roman; Marczak, Jan

    1995-03-01

    This paper presents the project of a laboratory model of a field-glasses range-finger. The optical transmitter of the device contains a commercial pulse semiconductor laser which generates IR wavelength around 905 nm. Some of the technical parameters of this device are: a maximum range of up to 3 km; an accuracy of +/- 5 m, divergence of a laser beam of 1 mrad; a repetition rate of 1 kHz. Dichroic elements of the receiver ensure a capability of an optimization of a field of view, without the worsening of luminance and size of an observation field.

  5. Modes in light wave propagating in semiconductor laser

    Science.gov (United States)

    Manko, Margarita A.

    1994-01-01

    The study of semiconductor laser based on an analogy of the Schrodinger equation and an equation describing light wave propagation in nonhomogeneous medium is developed. The active region of semiconductor laser is considered as optical waveguide confining the electromagnetic field in the cross-section (x,y) and allowing waveguide propagation along the laser resonator (z). The mode structure is investigated taking into account the transversal and what is the important part of the suggested consideration longitudinal nonhomogeneity of the optical waveguide. It is shown that the Gaussian modes in the case correspond to spatial squeezing and correlation. Spatially squeezed two-mode structure of nonhomogeneous optical waveguide is given explicitly. Distribution of light among the laser discrete modes is presented. Properties of the spatially squeezed two-mode field are described. The analog of Franck-Condon principle for finding the maxima of the distribution function and the analog of Ramsauer effect for control of spatial distribution of laser emission are discussed.

  6. Toward continuous-wave operation of organic semiconductor lasers

    Science.gov (United States)

    Sandanayaka, Atula S. D.; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya

    2017-01-01

    The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi–continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture. PMID:28508042

  7. Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

    OpenAIRE

    Cappuccio, Joseph C., Jr.

    1988-01-01

    Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

  8. Measurement of the emission spectrum of a semiconductor laser using laser-feedback interferometry.

    Science.gov (United States)

    Keeley, James; Freeman, Joshua; Bertling, Karl; Lim, Yah L; Mohandas, Reshma A; Taimre, Thomas; Li, Lianhe H; Indjin, Dragan; Rakić, Aleksandar D; Linfield, Edmund H; Davies, A Giles; Dean, Paul

    2017-08-03

    The effects of optical feedback (OF) in lasers have been observed since the early days of laser development. While OF can result in undesirable and unpredictable operation in laser systems, it can also cause measurable perturbations to the operating parameters, which can be harnessed for metrological purposes. In this work we exploit this 'self-mixing' effect to infer the emission spectrum of a semiconductor laser using a laser-feedback interferometer, in which the terminal voltage of the laser is used to coherently sample the reinjected field. We demonstrate this approach using a terahertz frequency quantum cascade laser operating in both single- and multiple-longitudinal mode regimes, and are able to resolve spectral features not reliably resolved using traditional Fourier transform spectroscopy. We also investigate quantitatively the frequency perturbation of individual laser modes under OF, and find excellent agreement with predictions of the excess phase equation central to the theory of lasers under OF.

  9. Antisites in III-V semiconductors: Density functional theory calculations

    KAUST Repository

    Chroneos, A.; Tahini, Hassan Ali; Schwingenschlö gl, Udo; Grimes, R. W.

    2014-01-01

    as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites (III V q) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites (V I I I

  10. Development of semiconductor laser based Doppler lidars for wind-sensing applications

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Hu, Qi; Pedersen, Christian

    2015-01-01

    We summarize the progress we have made in the development of semiconductor laser (SL) based Doppler lidar systems for remote wind speed and direction measurements. The SL emitter used in our wind-sensing lidar is an integrated diode laser with a tapered (semiconductor) amplifier. The laser source...

  11. Spherical distribution structure of the semiconductor laser diode stack for pumping

    International Nuclear Information System (INIS)

    Zhao Tianzhuo; Yu Jin; Liu Yang; Zhang Xue; Ma Yunfeng; Fan Zhongwei

    2011-01-01

    A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere, and the output of every bar is specially off-axis compressed to realize high coupling efficiency. The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium. The efficiency of the hollow light pipe, which is used for semiconductor laser diode stack coupling, is analyzed by geometric optics and ray tracing. Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure. Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system, and guides parameter optimization. Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution. (semiconductor devices)

  12. Delay induced high order locking effects in semiconductor lasers

    Science.gov (United States)

    Kelleher, B.; Wishon, M. J.; Locquet, A.; Goulding, D.; Tykalewicz, B.; Huyet, G.; Viktorov, E. A.

    2017-11-01

    Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types-—a quantum dot based device and a quantum well based device—are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

  13. Transient thermal analysis of semiconductor diode lasers under pulsed operation

    Science.gov (United States)

    Veerabathran, G. K.; Sprengel, S.; Karl, S.; Andrejew, A.; Schmeiduch, H.; Amann, M.-C.

    2017-02-01

    Self-heating in semiconductor lasers is often assumed negligible during pulsed operation, provided the pulses are `short'. However, there is no consensus on the upper limit of pulse width for a given device to avoid-self heating. In this paper, we present an experimental and theoretical analysis of the effect of pulse width on laser characteristics. First, a measurement method is introduced to study thermal transients of edge-emitting lasers during pulsed operation. This method can also be applied to lasers that do not operate in continuous-wave mode. Secondly, an analytical thermal model is presented which is used to fit the experimental data to extract important parameters for thermal analysis. Although commercial numerical tools are available for such transient analyses, this model is more suitable for parameter extraction due to its analytical nature. Thirdly, to validate this approach, it was used to study a GaSb-based inter-band laser and an InP-based quantum cascade laser (QCL). The maximum pulse-width for less than 5% error in the measured threshold currents was determined to be 200 and 25 ns for the GaSb-based laser and QCL, respectively.

  14. Chaos-pass filtering in injection-locked semiconductor lasers

    International Nuclear Information System (INIS)

    Murakami, Atsushi; Shore, K. Alan

    2005-01-01

    Chaos-pass filtering (CPF) of semiconductor lasers has been studied theoretically. CPF is a phenomenon which occurs in laser chaos synchronization by injection locking and is a fundamental technique for the extraction of messages at the receiver laser in chaotic communications systems. We employ a simple theory based on driven damped oscillators to clarify the physical background of CPF. The receiver laser is optically driven by injection from the transmitter laser. We have numerically investigated the response characteristics of the receiver when it is driven by periodic (message) and chaotic (carrier) signals. It is thereby revealed that the response of the receiver laser in the two cases is quite different. For the periodic drive, the receiver exhibits a response depending on the signal frequency, while the chaotic drive provides a frequency-independent synchronous response to the receiver laser. We verify that the periodic and chaotic drives occur independently in the CPF response, and, consequently, CPF can be clearly understood in the difference of the two drives. Message extraction using CPF is also examined, and the validity of our theoretical explanation for the physical mechanism underlying CPF is thus verified

  15. Fast physical random bit generation with chaotic semiconductor lasers

    Science.gov (United States)

    Uchida, Atsushi; Amano, Kazuya; Inoue, Masaki; Hirano, Kunihito; Naito, Sunao; Someya, Hiroyuki; Oowada, Isao; Kurashige, Takayuki; Shiki, Masaru; Yoshimori, Shigeru; Yoshimura, Kazuyuki; Davis, Peter

    2008-12-01

    Random number generators in digital information systems make use of physical entropy sources such as electronic and photonic noise to add unpredictability to deterministically generated pseudo-random sequences. However, there is a large gap between the generation rates achieved with existing physical sources and the high data rates of many computation and communication systems; this is a fundamental weakness of these systems. Here we show that good quality random bit sequences can be generated at very fast bit rates using physical chaos in semiconductor lasers. Streams of bits that pass standard statistical tests for randomness have been generated at rates of up to 1.7 Gbps by sampling the fluctuating optical output of two chaotic lasers. This rate is an order of magnitude faster than that of previously reported devices for physical random bit generators with verified randomness. This means that the performance of random number generators can be greatly improved by using chaotic laser devices as physical entropy sources.

  16. A semiconductor nanowire Josephson junction microwave laser

    Science.gov (United States)

    Cassidy, Maja; Uilhoorn, Willemijn; Kroll, James; de Jong, Damaz; van Woerkom, David; Nygard, Jesper; Krogstrup, Peter; Kouwenhoven, Leo

    We present measurements of microwave lasing from a single Al/InAs/Al nanowire Josephson junction strongly coupled to a high quality factor superconducting cavity. Application of a DC bias voltage to the Josephson junction results in photon emission into the cavity when the bias voltage is equal to a multiple of the cavity frequency. At large voltage biases, the strong non-linearity of the circuit allows for efficient down conversion of high frequency microwave photons down to multiple photons at the fundamental frequency of the cavity. In this regime, the emission linewidth narrows significantly below the bare cavity linewidth to 50%. The junction-cavity coupling and laser emission can be tuned rapidly via an external gate, making it suitable to be integrated into a scalable qubit architecture as a versatile source of coherent microwave radiation. This work has been supported by the Netherlands Organisation for Scientific Research (NWO/OCW), Foundation for Fundamental Research on Matter (FOM), European Research Council (ERC), and Microsoft Corporation Station Q.

  17. III-V group compound semiconductor light-emitting element having a doped tantalum barrier layer

    International Nuclear Information System (INIS)

    Oanna, Y.; Ozawa, N.; Yamashita, M.; Yasuda, N.

    1984-01-01

    Disclosed is a III-V Group compound semiconductor light-emitting element having a III-V Group compound semiconductor body with a p-n junction and including a p-type layer involved in forming the p-n junction; and a multi-layer electrode mounted on the p-type layer of the semiconductor body. The electrode comprises a first layer of gold alloy containing a small amount of beryllium or zinc and formed in direct contact with the p-type layer of the semiconductor body and an uppermost layer formed of gold or aluminum. A tantalum layer doped with carbon, nitrogen and/or oxygen is formed between the first layer and the uppermost layer by means of vacuum vapor deposition

  18. COHERENT LIDAR SYSTEM BASED ON A SEMICONDUCTOR LASER AND AMPLIFIER

    DEFF Research Database (Denmark)

    2009-01-01

    The present invention relates to a compact, reliable and low-cost coherent LIDAR (Light Detection And Ranging) system for remote wind-speed determination, determination of particle concentration, and/or temperature based on an all semiconductor light source and related methods. The present...... invention provides a coherent LIDAR system comprising a semiconductor laser for emission of a measurement beam of electromagnetic radiation directed towards a measurement volume for illumination of particles in the measurement volume, a reference beam generator for generation of a reference beam, a detector...... for generation of a detector signal by mixing of the reference beam with light emitted from the particles in the measurement volume illuminated by the measurement beam, and a signal processor for generating a velocity signal corresponding to the velocity of the particles based on the detector signal....

  19. Diagnostic studies of molecular plasmas using mid-infrared semiconductor lasers

    NARCIS (Netherlands)

    Röpcke, J.; Welzel, S.; Lang, N.; Hempel, F.; Gatilova, L.; Guaitella, O.; Rousseau, A.; Davies, P.B.

    2008-01-01

    Within the last decade mid-infrared absorption spectroscopy between 3 and 20 µm, known as infrared laser absorption spectroscopy (IRLAS) and based on tuneable semiconductor lasers, namely lead salt diode lasers, often called tuneable diode lasers (TDL), and quantum cascade lasers (QCL) has

  20. Modeling bidirectionally coupled single-mode semiconductor lasers

    International Nuclear Information System (INIS)

    Mulet, Josep; Masoller, Cristina; Mirasso, Claudio R.

    2002-01-01

    We develop a dynamical model suitable for the description of two mutually coupled semiconductor lasers in a face-to-face configuration. Our study considers the propagation of the electric field along the compound system as well as the evolution of the carrier densities within each semiconductor laser. Mutual injection, passive optical feedback, and multiple reflections are accounted for in this framework, although under weak to moderate coupling conditions. We systematically describe the effect of the coupling strength on the spectrum of monochromatic solutions and on the respective dynamical behavior. By assuming single-longitudinal-mode operation, weak mutual coupling and slowly varying approximation, the dynamical model can be reduced to rate equations describing the mutual injection from one laser to its counterpart and vice versa. A good agreement between the complete and simplified models is found for small coupling. For larger coupling, higher-order terms lead to a smaller threshold reduction, reflected itself in the spectrum of the monochromatic solutions and in the dynamics of the optical power

  1. Elastic constants of nanoporous III-V semiconductors

    Czech Academy of Sciences Publication Activity Database

    Janovská, Michaela; Sedlák, Petr; Kruisová, Alena; Seiner, Hanuš; Landa, Michal; Grym, Jan

    2015-01-01

    Roč. 48, č. 24 (2015) ISSN 0022-3727 R&D Projects: GA ČR GB14-36566G Institutional support: RVO:61388998 ; RVO:67985882 Keywords : nanoporous semiconductors * resonant ultrasound spectroscopy * finite elements modelling Subject RIV: BM - Solid Matter Physics ; Magnetism; BM - Solid Matter Physics ; Magnetism (URE-Y) Impact factor: 2.772, year: 2015 http://iopscience.iop.org/0022-3727/48/24/245102/article

  2. Curie temperature trends in (III, Mn)V ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; König, J.; Sinova, J.; Kučera, Jan; MacDonald, A. H.

    2002-01-01

    Roč. 66, č. 1 (2002), s. 012402-1-012402-4 ISSN 0163-1829 R&D Projects: GA MŠk OC P5.10; GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * Curie temperature Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.327, year: 2002

  3. Excitonic bistabilities, instabilities and chaos in laser-pumped semiconductor

    International Nuclear Information System (INIS)

    Nguyen Ba An; Nguyen Trung Dan; Hoang Xuan Nguyen

    1992-07-01

    The Hurwitz criteria are used for a stability analysis of the steady state excitonic optical bistability curves in a semiconductor pumped by an external laser resonant with the exciton level. Besides the middle branch of the bistability curves which is unstable in the sense of the linear stability theory, we have found other domains of instability in the upper and lower branches of the steady state curves. Numerical results show that a possible route to chaos in the photon-exciton system is period-doubling self-oscillation process. The influence of the presence of free carriers that coexist with the excitons is also discussed. (author). 16 refs, 6 figs

  4. An electrically injected rolled-up semiconductor tube laser

    Energy Technology Data Exchange (ETDEWEB)

    Dastjerdi, M. H. T.; Djavid, M.; Mi, Z., E-mail: zetian.mi@mcgill.ca [Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9 (Canada)

    2015-01-12

    We have demonstrated electrically injected rolled-up semiconductor tube lasers, which are formed when a coherently strained InGaAs/InGaAsP quantum well heterostructure is selectively released from the underlying InP substrate. The device exhibits strong coherent emission in the wavelength range of ∼1.5 μm. A lasing threshold of ∼1.05 mA is measured for a rolled-up tube with a diameter of ∼5 μm and wall thickness of ∼140 nm at 80 K. The Purcell factor is estimated to be ∼4.3.

  5. Effective Linewidth of Semiconductor Lasers for Coherent Optical Data Links

    DEFF Research Database (Denmark)

    Iglesias Olmedo, Miguel; Pang, Xiaodan; Schatz, Richard

    2016-01-01

    name “Effective Linewidth”. We derive this figure of merit analytically, explore it by numerical simulations and experimentally validate our results by transmitting a 28 Gbaud DP-16QAM over an optical link. Our investigations cover the use of semiconductor lasers both in the transmitter side...... and as a local oscillator at the receiver. The obtained results show that our proposed “effective linewidth” is easy to measure and accounts for frequency noise more accurately, and hence the penalties associated to phase noise in the received signal....

  6. Monolithic integration of microfluidic channels and semiconductor lasers

    Science.gov (United States)

    Cran-McGreehin, Simon J.; Dholakia, Kishan; Krauss, Thomas F.

    2006-08-01

    We present a fabrication method for the monolithic integration of microfluidic channels into semiconductor laser material. Lasers are designed to couple directly into the microfluidic channel, allowing submerged particles pass through the output beams of the lasers. The interaction between particles in the channel and the lasers, operated in either forward or reverse bias, allows for particle detection, and the optical forces can be used to trap and move particles. Both interrogation and manipulation are made more amenable for lab-on-a-chip applications through monolithic integration. The devices are very small, they require no external optical components, have perfect intrinsic alignment, and can be created with virtually any planar configuration of lasers in order to perform a variety of tasks. Their operation requires no optical expertise and only low electrical power, thus making them suitable for computer interfacing and automation. Insulating the pn junctions from the fluid is the key challenge, which is overcome by using photo-definable SU8-2000 polymer.

  7. Design and construct of a tunable semiconductor laser

    Directory of Open Access Journals (Sweden)

    J. Sabbaghzadeh

    2000-06-01

    Full Text Available   In this paper we explain in detail the design of a semiconductor laser coupled with the reflected beams from a grating. Since the beams reflected are diffracted at different angles, only one component of them can be resonated in the cavity. This technique reduces the output frequency of the laser and increases its stability.   Since this system has various applications in the spectroscopy, gas concentrations, air pollution measurements, investigation of atomic and molecular structure, and so on, system is believed to be simple and accurate. This design is made for the first time in Iran and its reliability has been tested by the measurement of the rubidium atom, and the result is given.

  8. The dynamical complexity of optically injected semiconductor lasers

    International Nuclear Information System (INIS)

    Wieczorek, S.; Krauskopf, B.; Simpson, T.B.; Lenstra, D.

    2005-01-01

    This report presents a modern approach to the theoretical and experimental study of complex nonlinear behavior of a semiconductor laser with optical injection-an example of a widely applied and technologically relevant forced nonlinear oscillator. We show that the careful bifurcation analysis of a rate equation model yields (i) a deeper understanding of already studied physical phenomena, and (ii) the discovery of new dynamical effects, such as multipulse excitability. Different instabilities, cascades of bifurcations, multistability, and sudden chaotic transitions, which are often viewed as independent, are in fact logically connected into a consistent web of bifurcations via special points called organizing centers. This theoretical bifurcation analysis has predictive power, which manifests itself in good agreement with experimental measurements over a wide range of parameters and diversity of dynamics. While it is dealing with the specific system of an optically injected laser, our work constitutes the state-of-the-art in the understanding and modeling of a nonlinear physical system in general

  9. Electronic Biosensors Based on III-Nitride Semiconductors.

    Science.gov (United States)

    Kirste, Ronny; Rohrbaugh, Nathaniel; Bryan, Isaac; Bryan, Zachary; Collazo, Ramon; Ivanisevic, Albena

    2015-01-01

    We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

  10. All-metal coupling and package of semiconductor laser and amplifier with optical fiber

    International Nuclear Information System (INIS)

    Xu Fenglan; Li Lina; Zhang Yueqing

    1992-01-01

    The semiconductor laser and optical amplifier made by Changchun Institute of Physics coupled with optical fiber by use of all-metal coupling are represented. The net gain of semiconductor laser amplifier with optical fiber is 14 ∼18 dB

  11. Nanonewton thrust measurement of photon pressure propulsion using semiconductor laser

    Science.gov (United States)

    Iwami, K.; Akazawa, Taku; Ohtsuka, Tomohiro; Nishida, Hiroyuki; Umeda, Norihiro

    2011-09-01

    To evaluate the thrust produced by photon pressure emitted from a 100 W class continuous-wave semiconductor laser, a torsion-balance precise thrust stand is designed and tested. Photon emission propulsion using semiconductor light sources attract interests as a possible candidate for deep-space propellant-less propulsion and attitude control system. However, the thrust produced by photon emission as large as several ten nanonewtons requires precise thrust stand. A resonant method is adopted to enhance the sensitivity of the biflier torsional-spring thrust stand. The torsional spring constant and the resonant of the stand is 1.245 × 10-3 Nm/rad and 0.118 Hz, respectively. The experimental results showed good agreement with the theoretical estimation. The thrust efficiency for photon propulsion was also defined. A maximum thrust of 499 nN was produced by the laser with 208 W input power (75 W of optical output) corresponding to a thrust efficiency of 36.7%. The minimum detectable thrust of the stand was estimated to be 2.62 nN under oscillation at a frequency close to resonance.

  12. Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser; Construccion de un amplificador optico de semiconductor a partir de un laser de semiconductor Fabry-Perot

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, E.; Soto, H.; Marquez, H.; Valles V, N. [Departamento de Electronica y Telecomunicaciones, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada. Km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, Baja California (Mexico)

    2000-07-01

    A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

  13. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  14. Diffusion in Intrinsic and Highly Doped III-V Semiconductors

    CERN Multimedia

    Stolwijk, N

    2002-01-01

    %title\\\\ \\\\Diffusion plays a key role in the fabrication of semiconductor devices. The diffusion of atoms in crystals is mediated by intrinsic point defects. Investigations of the diffusion behaviour of self- and solute atoms on the Ga sublattice of gallium arsenide led to the conclusion that in intrinsic and n-type material charged Ga vacancies are involved in diffusion processes whereas in p-type material diffusion if governed by charged Ga self-interstitials. Concerning the As sublattice of gallium arsenide there is a severe lack of reliable diffusion data. The few available literature data on intrinsic GaAs are not mutually consistent. A systematic study of the doping dependence of diffusion is completely missing. The most basic diffusion process - self-diffusion of As and its temperature and doping dependence - is practically not known. For GaP a similar statement holds.\\\\ \\\\The aim of the present project is to perform a systematic diffusion study of As diffusion in intrinsic and doped GaAs and in GaP. P...

  15. Advanced excimer laser technologies enable green semiconductor manufacturing

    Science.gov (United States)

    Fukuda, Hitomi; Yoo, Youngsun; Minegishi, Yuji; Hisanaga, Naoto; Enami, Tatsuo

    2014-03-01

    "Green" has fast become an important and pervasive topic throughout many industries worldwide. Many companies, especially in the manufacturing industries, have taken steps to integrate green initiatives into their high-level corporate strategies. Governments have also been active in implementing various initiatives designed to increase corporate responsibility and accountability towards environmental issues. In the semiconductor manufacturing industry, there are growing concerns over future environmental impact as enormous fabs expand and new generation of equipments become larger and more powerful. To address these concerns, Gigaphoton has implemented various green initiatives for many years under the EcoPhoton™ program. The objective of this program is to drive innovations in technology and services that enable manufacturers to significantly reduce both the financial and environmental "green cost" of laser operations in high-volume manufacturing environment (HVM) - primarily focusing on electricity, gas and heat management costs. One example of such innovation is Gigaphoton's Injection-Lock system, which reduces electricity and gas utilization costs of the laser by up to 50%. Furthermore, to support the industry's transition from 300mm to the next generation 450mm wafers, technologies are being developed to create lasers that offer double the output power from 60W to 120W, but reducing electricity and gas consumption by another 50%. This means that the efficiency of lasers can be improve by up to 4 times in 450mm wafer production environments. Other future innovations include the introduction of totally Heliumfree Excimer lasers that utilize Nitrogen gas as its replacement for optical module purging. This paper discusses these and other innovations by Gigaphoton to enable green manufacturing.

  16. Ion Implantation in III-V Compound Semiconductors

    Science.gov (United States)

    1984-09-01

    340 keV H + -0 Ga P  O UES-723-292 !:• (H o>ray *P-K X - rayO Ga-K X -ray iii! RBS * ..I -iO.. 0 10I to1. 01 • .0 -. I0 1 LI =i, O I 0 01 0.J 10...Identity by blo ," pume) Ion Implantation, GaAs, Hall effect, electrical resistivity, Rutherford Backscattering (RBS), channeling, Proton induced x -ray...Mebility (jH) upon Aiinealing Temperature (TA) for 1 X 101 /cm• Dose Samples of GaAs:Mg with Three Different Capping Methods 33 p 14 Dependence of Surface

  17. Deep-red semiconductor monolithic mode-locked lasers

    International Nuclear Information System (INIS)

    Kong, L.; Bajek, D.; White, S. E.; Forrest, A. F.; Cataluna, M. A.; Wang, H. L.; Pan, J. Q.; Wang, X. L.; Cui, B. F.; Ding, Y.

    2014-01-01

    A deep-red semiconductor monolithic mode-locked laser is demonstrated. Multi-section laser diodes based on an AlGaAs multi-quantum-well structure were passively mode-locked, enabling the generation of picosecond optical pulses at 752 nm, at pulse repetition rates of 19.37 GHz. An investigation of the dependence of the pulse duration as a function of reverse bias revealed a predominantly exponential decay trend of the pulse duration, varying from 10.5 ps down to 3.5 ps, which can be associated with the concomitant reduction of absorption recovery time with increasing applied field. A 30-MHz-tunability of the pulse repetition rate with bias conditions is also reported. The demonstration of such a compact, efficient and versatile ultrafast laser in this spectral region paves the way for its deployment in a wide range of applications such as biomedical microscopy, pulsed terahertz generation as well as microwave and millimeter-wave generation, with further impact on sensing, imaging and optical communications

  18. Multiclustered chimeras in large semiconductor laser arrays with nonlocal interactions

    Science.gov (United States)

    Shena, J.; Hizanidis, J.; Hövel, P.; Tsironis, G. P.

    2017-09-01

    The dynamics of a large array of coupled semiconductor lasers is studied numerically for a nonlocal coupling scheme. Our focus is on chimera states, a self-organized spatiotemporal pattern of coexisting coherence and incoherence. In laser systems, such states have been previously found for global and nearest-neighbor coupling, mainly in small networks. The technological advantage of large arrays has motivated us to study a system of 200 nonlocally coupled lasers with respect to the emerging collective dynamics. Moreover, the nonlocal nature of the coupling allows us to obtain robust chimera states with multiple (in)coherent domains. The crucial parameters are the coupling strength, the coupling phase and the range of the nonlocal interaction. We find that multiclustered chimera states exist in a wide region of the parameter space and we provide quantitative characterization for the obtained spatiotemporal patterns. By proposing two different experimental setups for the realization of the nonlocal coupling scheme, we are confident that our results can be confirmed in the laboratory.

  19. Optically pumped semiconductor lasers: Conception and characterization of a single mode source for Cesium atoms manipulation

    International Nuclear Information System (INIS)

    Cocquelin, B.

    2009-02-01

    Lasers currently used in atomic clocks or inertial sensors are suffering from a lack of power, narrow linewidth or compactness for future spatial missions. Optically pumped semiconductor lasers, which combine the approach of classical solid state lasers and the engineering of semiconductor laser, are considered here as a candidate to a metrological laser source dedicated to the manipulation of Cesium atoms in these instruments. These lasers have demonstrated high power laser emission in a circular single transverse mode, as well as single longitudinal mode emission, favoured by the semiconductor structure and the external cavity design. We study the definition and the characterization of a proper semiconductor structure for the cooling and the detection of Cesium atoms at 852 nm. A compact and robust prototype tunable on the Cesium D2 hyperfine structure is built. The laser frequency is locked to an atomic transition thanks to a saturated absorption setup. The emission spectral properties are investigated, with a particular attention to the laser frequency noise and the laser linewidth. Finally, we describe and model the thermal properties of the semiconductor structure, which enables the simulation of the laser power characteristic. The experimental parameters are optimised to obtain the maximum output power with our structure. Thanks to our analysis, we propose several ways to overcome these limitations, by reducing the structure heating. (authors)

  20. Comprehensive and fully self-consistent modeling of modern semiconductor lasers

    International Nuclear Information System (INIS)

    Nakwaski, W.; Sarzał, R. P.

    2016-01-01

    The fully self-consistent model of modern semiconductor lasers used to design their advanced structures and to understand more deeply their properties is given in the present paper. Operation of semiconductor lasers depends not only on many optical, electrical, thermal, recombination, and sometimes mechanical phenomena taking place within their volumes but also on numerous mutual interactions between these phenomena. Their experimental investigation is quite complex, mostly because of miniature device sizes. Therefore, the most convenient and exact method to analyze expected laser operation and to determine laser optimal structures for various applications is to examine the details of their performance with the aid of a simulation of laser operation in various considered conditions. Such a simulation of an operation of semiconductor lasers is presented in this paper in a full complexity of all mutual interactions between the above individual physical processes. In particular, the hole-burning effect has been discussed. The impacts on laser performance introduced by oxide apertures (their sizes and localization) have been analyzed in detail. Also, some important details concerning the operation of various types of semiconductor lasers are discussed. The results of some applications of semiconductor lasers are shown for successive laser structures. (paper)

  1. Efficient n-type doping of zinc-blende III-V semiconductor nanowires

    Science.gov (United States)

    Besteiro, Lucas V.; Tortajada, Luis; Souto, J.; Gallego, L. J.; Chelikowsky, James R.; Alemany, M. M. G.

    2014-03-01

    We demonstrate that it is preferable to dope III-V semiconductor nanowires by n-type anion substitution as opposed to cation substitution. Specifically, we show the dopability of zinc-blende nanowires is more efficient when the dopants are placed at the anion site as quantified by formation energies and the stabilization of DX-like defect centers. The comparison with previous work on n - type III-V semiconductor nanocrystals also allows to determine the role of dimensionality and quantum confinement on doping characteristics of materials. Our results are based on first-principles calculations of InP nanowires by using the PARSEC code. Work supported by the Spanish MICINN (FIS2012-33126) and Xunta de Galicia (GPC2013-043) in conjunction with FEDER. JRC acknowledges support from DoE (DE-FG02-06ER46286 and DESC0008877). Computational support was provided in part by CESGA.

  2. Diode lasers and arrays

    International Nuclear Information System (INIS)

    Streifer, W.

    1988-01-01

    This paper discusses the principles of operation of III-V semiconductor diode lasers, the use of distributed feedback, and high power laser arrays. The semiconductor laser is a robust, miniature, versatile device, which directly converts electricity to light with very high efficiency. Applications to pumping solid-state lasers and to fiber optic and point-to-point communications are reviewed

  3. The coupling of thermochemistry and phase diagrams for group III-V semiconductor systems. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, T.J.

    1998-07-21

    The project was directed at linking the thermochemical properties of III-V compound semiconductors systems with the reported phase diagrams. The solid-liquid phase equilibrium problem was formulated and three approaches to calculating the reduced standard state chemical potential were identified and values were calculated. In addition, thermochemical values for critical properties were measured using solid state electrochemical techniques. These values, along with the standard state chemical potentials and other available thermochemical and phase diagram data, were combined with a critical assessment of selected III-V systems. This work was culminated with a comprehensive assessment of all the III-V binary systems. A novel aspect of the experimental part of this project was the demonstration of the use of a liquid encapsulate to measure component activities by a solid state emf technique in liquid III-V systems that exhibit high vapor pressures at the measurement temperature.

  4. Photoacoustic Techniques for Trace Gas Sensing Based on Semiconductor Laser Sources

    Directory of Open Access Journals (Sweden)

    Vincenzo Spagnolo

    2009-12-01

    Full Text Available The paper provides an overview on the use of photoacoustic sensors based on semiconductor laser sources for the detection of trace gases. We review the results obtained using standard, differential and quartz enhanced photoacoustic techniques.

  5. Identification of amplitude and timing jitter in external-cavity mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper; Kroh, Marcel

    2004-01-01

    We theoretically and experimentally investigate the dynamics of external-cavity mode-locked semiconductor lasers, focusing on stability properties, optimization of pulsewidth and timing jitter. A new numerical approach allows to clearly separate timing and amplitude jitter....

  6. Emergence of resonant mode-locking via delayed feedback in quantum dot semiconductor lasers.

    Science.gov (United States)

    Tykalewicz, B; Goulding, D; Hegarty, S P; Huyet, G; Erneux, T; Kelleher, B; Viktorov, E A

    2016-02-22

    With conventional semiconductor lasers undergoing external optical feedback, a chaotic output is typically observed even for moderate levels of the feedback strength. In this paper we examine single mode quantum dot lasers under strong optical feedback conditions and show that an entirely new dynamical regime is found consisting of spontaneous mode-locking via a resonance between the relaxation oscillation frequency and the external cavity repetition rate. Experimental observations are supported by detailed numerical simulations of rate equations appropriate for this laser type. The phenomenon constitutes an entirely new mode-locking mechanism in semiconductor lasers.

  7. Quantifying Information Flow between Two Chaotic Semiconductor Lasers Using Symbolic Transfer Entropy

    International Nuclear Information System (INIS)

    Li Nian-Qiang; Pan Wei; Yan Lian-Shan; Luo Bin; Xu Ming-Feng; Tang Yi-Long

    2012-01-01

    Symbolic transfer entropy (STE) is employed to quantify the dominant direction of information flow between two chaotic-semiconductor-laser time series. The information flow in unidirectionally and bidirectionally coupled systems was analyzed systematically. Numerical results show that the dependence relationship can be revealed if there exists any coupling between two chaotic semiconductor lasers. More importantly, in both unsynchronized and good synchronization regimes, the STE can be used to quantify the direction of information flow between the lasers, although the former case leads to a better identification. The results thus establish STE as an effective tool for quantifying the direction of information flow between chaotic-laser-based systems

  8. Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors

    International Nuclear Information System (INIS)

    Heinrich, Martin; Kluska, Sven; Hameiri, Ziv; Hoex, Bram; Aberle, Armin G.

    2013-01-01

    We present a method that allows the extraction of relevant physical properties such as sheet resistance and dopant profile from arbitrarily shaped laser-doped micro-scale areas formed in semiconductors with a focused pulsed laser beam. The key feature of the method is to use large laser-doped areas with an identical average number of laser pulses per area (laser pulse density) as the arbitrarily shaped areas. The method is verified using sheet resistance measurements on laser-doped silicon samples. Furthermore, the method is extended to doping with continuous-wave lasers by using the average number of passes per area or density of passes

  9. Exploiting strain to enhance the Bi incorporation in GaAs-based III/V semiconductors using MOVPE

    Science.gov (United States)

    Nattermann, L.; Ludewig, P.; Sterzer, E.; Volz, K.

    2017-07-01

    Bi containing III/V semiconductors are frequently mentioned for their importance as part of the next generation of optoelectronic devices. Bi containing ternary and quaternary materials like Ga(AsBi), Ga(NAsBi) or Ga(PAsBi) are promising candidates to meet the requirements for new laser structures for telecommunications and solar cell applications. However, in previous studies it was determined that the incorporation of sufficient amounts of Bi still poses a challenge, especially when using MOVPE (metalorganic vapour phase epitaxy) as the growth technique. In order to figure out which mechanisms are responsible for the limitation of Bi incorporation, this work deals with the question of whether there is a relationship between strain, induced by the large Bi atoms, and the saturation level of Bi incorporation in Ga(AsBi). Ga(NAsBi) structures were grown by MOVPE at a low temperature, 400 °C, and compared to Ga(PAsBi) as well as Ga(AsBi) growth. By using the two group V atoms P and N, which have a smaller covalent radius than Bi, the effect of local strain compensation was investigated systematically. The comparison of Bi incorporation in the two quaternary materials systems proved the importance of local strain for the limitation of Bi incorporation, in addition to other effects, like Bi surface coverage and hydrocarbon groups at the growth surface. This, of course, also opens up ways to strain-state-engineer the Bi incorporation in semiconductor alloys.

  10. Piezoelectric strained layer semiconductor lasers and integrated modulators

    International Nuclear Information System (INIS)

    Fleischmann, Thomas

    2002-01-01

    The properties, benefits and limitations of strained InGaAs/GaAs quantum well lasers and modulators grown on (111)B GaAs have been studied. Particular interest in this material system arose from the predicted increase in critical layer thickness, which would facilitate semiconductor lasers emitting beyond 1 μm. However, the recent discovery of a new type of misfit dislocation indicates that the critical layer thickness in this system is closer to that of (001) orientated structures. Photoluminescence and transmission electron microscopy presented in this study support this predicted reduction of the critical layer thickness and the resulting limitations on the emission wavelength. The absence of 3D growth in this system may however be advantageous when high reproducibility and reliable lasing operation beyond 1 μm are required. The piezoelectric field originating from strained growth on substrate orientations other than (001) was studied and its influence on transition energies and absorptive behaviour were investigated. The piezoelectric constant was found to show significant temperature dependence and, as also indicated in earlier studies, its value is smaller then the linearly interpolated value. When the effects of indium segregation on the transition energies is considered, the reduction is significantly smaller. Good agreement between theory and experiment was obtained using 86% of the value linearly interpolated between the binaries at room temperature and 82% at low temperature. Broad area lasers were fabricated emitting at lasing wavelengths of up to 1.08 μm with threshold current densities as low as 80 A/cm 2 at room temperature under continuous wave operation. Increasing the indium composition and strain within the limit of strain relaxation was demonstrated to improve device performance significantly. Furthermore, ridge waveguide lasers were fabricated exhibiting monomode emission at wavelengths up to 1.07 μm with a threshold current of 19 mA at

  11. Generic technique to grow III-V semiconductor nanowires in a closed glass vessel

    Directory of Open Access Journals (Sweden)

    Kan Li

    2016-06-01

    Full Text Available Crystalline III-V semiconductor nanowires have great potential in fabrication of nanodevices for applications in nanoelectronics and optoelectronics, and for studies of novel physical phenomena. Sophisticated epitaxy techniques with precisely controlled growth conditions are often used to prepare high quality III-V nanowires. The growth process and cost of these experiments are therefore dedicated and very high. Here, we report a simple but generic method to synthesize III-V nanowires with high crystal quality. The technique employs a closed evacuated tube vessel with a small tube carrier containing a solid source of materials and another small tube carrier containing a growth substrate inside. The growth of nanowires is achieved after heating the closed vessel in a furnace to a preset high temperature and then cooling it down naturally to room temperature. The technique has been employed to grow InAs, GaAs, and GaSb nanowires on Si/SiO2 substrates. The as-grown nanowires are analyzed by SEM, TEM and Raman spectroscopy and the results show that the nanowires are high quality zincblende single crystals. No particular condition needs to be adjusted and controlled in the experiments. This technique provides a convenient way of synthesis of III-V semiconductor nanowires with high material quality for a wide range of applications.

  12. All-polymer organic semiconductor laser chips: Parallel fabrication and encapsulation

    DEFF Research Database (Denmark)

    Vannahme, Christoph; Klinkhammer, Sönke; Christiansen, Mads Brøkner

    2010-01-01

    Organic semiconductor lasers are of particular interest as tunable visible laser light sources. For bringing those to market encapsulation is needed to ensure practicable lifetimes. Additionally, fabrication technologies suitable for mass production must be used. We introduce all-polymer chips...... comprising encapsulated distributed feedback organic semiconductor lasers. Several chips are fabricated in parallel by thermal nanoimprint of the feedback grating on 4? wafer scale out of poly(methyl methacrylate) (PMMA) and cyclic olefin copolymer (COC). The lasers consisting of the organic semiconductor...... tris(8- hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2- methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM) are hermetically sealed by thermally bonding a polymer lid. The organic thin film is placed in a basin within the substrate and is not in direct contact to the lid...

  13. II-VI/III-V Heterojunction Lasers

    National Research Council Canada - National Science Library

    Gunshor, Robert

    1999-01-01

    ... in both. In the second part of the program we studied the growth and the optical evaluation of wide bandgap nitride heterostructures, an effort which included the first reporting of a GaN-based laser to be fabricated...

  14. Research progress of III-V laser bonding to Si

    Science.gov (United States)

    Bo, Ren; Yan, Hou; Yanan, Liang

    2016-12-01

    The vigorous development of silicon photonics makes a silicon-based light source essential for optoelectronics' integration. Bonding of III-V/Si hybrid laser has developed rapidly in the last ten years. In the tireless efforts of researchers, we are privileged to see these bonding methods, such as direct bonding, medium adhesive bonding and low temperature eutectic bonding. They have been developed and applied to the research and fabrication of III-V/Si hybrid lasers. Some research groups have made remarkable progress. Tanabe Katsuaki of Tokyo University successfully implemented a silicon-based InAs/GaAs quantum dot laser with direct bonding method in 2012. They have bonded the InAs/GaAs quantum dot laser to the silicon substrate and the silicon ridge waveguide, respectively. The threshold current of the device is as low as 200 A/cm2. Stevan Stanković and Sui Shaoshuai successfully produced a variety of hybrid III-V/Si laser with the method of BCB bonding, respectively. BCB has high light transmittance and it can provide high bonding strength. Researchers of Tokyo University and Peking University have realized III-V/Si hybrid lasers with metal bonding method. We describe the progress in the fabrication of III-V/Si hybrid lasers with bonding methods by various research groups in recent years. The advantages and disadvantages of these methods are presented. We also introduce the progress of the growth of III-V epitaxial layer on silicon substrate, which is also a promising method to realize silicon-based light source. I hope that readers can have a general understanding of this field from this article and we can attract more researchers to focus on the study in this field.

  15. Broadband tunability of gain-flattened quantum-well semiconductor lasers with an external grating

    International Nuclear Information System (INIS)

    Mittelstein, M.; Mehuys, D.; Yariv, A.; Sarfaty, R.; Ungar, J.E.

    1989-01-01

    Semiconductor injection lasers are known to be tunable over a range of order kΒ · T. Quantum-well lasers, in particular, are shown to exhibit flattened, broadband gain spectra at a particular pumping condition. The gain requirement for a grating-tuned external cavity configuration is examined and is applied to a semiconductor quantum-well laser with an optimized length of gain region. The coupled-cavity formalism is employed to examine the conditions for continuous tuning. The possible tuning range of double-heterostructure lasers is compared to that of quantum-well lasers. The predicted broadband tunability of quantum-well lasers is confirmed experimentally by grating-tuning of uncoated lasers exceeding 120 nm, with single, longitudinal mode output power exceeding 300 mW

  16. Development and characterization of a semi-conductor laser sensor for real time measurement and identification of atmospheric pollutants

    International Nuclear Information System (INIS)

    Boulos, F.; Zaatar, Y.; Atanas, J.P.; Bechara, J.

    2004-01-01

    Full text.Tunable diode laser absorption spectroscopy (TDLAS) in the near infrared (NIR) using semiconductor lasers of compounds between elements of group III (Ga, Al and In) and group V (P, As and Sb) is being increasingly used in various environmental and industrial process control applications. This technique exploits the unique properties of these laser materials i.e., high coherence, high monochromaticity, low divergence and high brightness to permit rapid sensitive detection with high selectivity and spectral resolution. A computer-interfaced near infrared semiconductor laser sensor has been developed in our laboratory for spectroscopic applications in air pollution monitoring. The sensor can be operated in two configurations: open path free beam coupled to a multiple pass White cell and fiber optic guided beam coupled to an evanescent wave sensor. This paper will present an overview of the system's modulation, sensing and data acquisition methods and some recent measurement results, together with a description of ongoing research and development for the improvement of the system's performance and sensitivity

  17. Influence of temperature on the spectral characteristics of semiconductor lasers in the visible range

    Science.gov (United States)

    Adamov, A. A.; Baranov, M. S.; Khramov, V. N.

    2018-04-01

    The results of studies on the effect of temperature on the output spectral characteristics of continuous semiconductor lasers of the visible range are presented. The paper presents the results of studying the spectral-optical radiation parameters of semiconductor lasers, their coherence lengths, and the dependence of the position of the spectral peak of the wavelength on temperature. This is necessary for the selection of the most optimal laser in order to use it for medical ophthalmologic diagnosis. The experiment was carried out using semiconductor laser modules based on a laser diode. The spectra were recorded by using a two-channel automated spectral complex based on the MDR-23 monochromator. Spectral dependences on the temperature of semiconductor lasers are obtained, in the range from 300 to 370 K. The possibility of determining the internal damage to the stabilization of laser modules without opening the case is shown, but only with the use of their spectral characteristics. The obtained data allow taking into account temperature characteristics and further optimization of parameters of such lasers when used in medical practice, in particular, in ophthalmologic diagnostics.

  18. Proteomic and metabolomic biomarkers for III-V semiconductors: And prospects for application to nano-materials

    International Nuclear Information System (INIS)

    Fowler, Bruce A.; Conner, Elizabeth A.; Yamauchi, Hiroshi

    2008-01-01

    There has been an increased appreciation over the last 20 years that chemical agents at very low dose levels can produce biological responses in protein expression patterns (proteomic responses) or alterations in sensitive metabolic pathways (metabolomic responses). Marked improvements in analytical methodologies, such as 2-D gel electrophoresis, matrix-assisted laser desorption-time of flight (MALDI-TOF) and surface enhanced laser desorption-time of flight (SELDI-TOF) technologies are capable of identifying specific protein patterns related to exposure to chemicals either alone or as mixtures. The detection and interpretation of early cellular responses to chemical agents have also made great advances through correlative ultrastructural morphometric and biochemical studies. Similarly, advances in analytical technologies such as HPLC, proton NMR, MALDI-TOF, and SELDI-TOF have permitted early detection of changes in a number of essential metabolic pathways following chemical exposures by measurement of alterations in metabolic products from those pathways. Data from these approaches are increasingly regarded as potentially useful biomarkers of chemical exposure and early cellular responses. Validation and establishment of linkages to biological outcomes are needed in order for biomarkers of effect to be established. This short review will cover a number of the above techniques and report data from chemical exposures to two binary III-V semiconductor compounds to illustrate gender differences in proteomic responses. In addition, the use of these methodologies in relation to rapid safety evaluations of nanotechnology products will be discussed. (Supported in part by NIH R01-ES4879)

  19. Progress in Ultrafast Intense Laser Science III

    CERN Document Server

    Yamanouchi, Kaoru; Agostini, Pierre; Ferrante, Gaetano

    2008-01-01

    The PUILS series presents Progress in Ultrafast Intense Laser Science, a newly emerging interdisciplinary research field spanning atomic and molecular physics, molecular science, and optical science. PUILS has been stimulated by the recent development of ultrafast laser technologies. Each volume contains approximately 15 chapters, authored by researchers at the forefront. Each chapter opens with an overview of the topics to be discussed, so that researchers, who are not experts in the specific topics, as well as graduate students can grasp the importance and attractions of this sub-field of research, and these are followed by reports of cutting-edge discoveries. This third volume covers a diverse range of disciplines, focusing on such topics as strong field ionization of atoms, ionization and fragmentation of molecules and clusters, generation of high-order harmonics and attosecond pulses, filamentation and laser plasma interaction, and the development of ultrashort and ultrahigh-intensity light sources.

  20. Study of III-V semiconductor band structure by synchrotron photoemission

    International Nuclear Information System (INIS)

    Williams, G.P.; Cerrina, F.; Anderson, J.; Lapeyre, G.J.; Smith, R.J.; Hermanson, J.; Knapp, J.A.

    1982-01-01

    Angle-resolved synchrotron photoemission studies of six III-V semiconductors have been carried out. For emission normal to the (110) plane of these materials, peaks in the experimental spectra were identified with the bands involved in the transitions, and the critical point energies X 3 , X 5 , and Σ 1 /sup min/, were determined. The data indicate that k perpendicular is conserved in the transitions. Comparison of the data with theoretical bands permits an evaluation of k perpendicular associated with the experimentally observed transition, and from this information the bands were plotted out

  1. A study on the optical parts for a semiconductor laser module

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Jun-Girl; Lee, Dong-Kil; Kim, Yang-Gyu; Lee, Kwang-Hoon; Park, Young-Sik [Korea Photonics Technology Institute, Gwangju (Korea, Republic of); Jang, Kwang-Ho [Hanvit Optoline, Gwangju (Korea, Republic of); Kang, Seung-Goo [COSET, Gwangju (Korea, Republic of)

    2014-11-15

    A semiconductor laser module consists of a LD (laser diode) chip that generates a laser beam, two cylindrical lenses to collimate the laser beam, a high-reflection mirror to produce a large output by collecting the laser beam, a collimator lens to guide the laser beam to an optical fiber and a protection filter to block reflected laser light that might damage the LD chip. The cylindrical lenses used in a semiconductor laser module are defined as FACs (fast axis collimators) and SACs (slow axis collimators) and are attached to the system module to control the shape of the laser beam. The FAC lens and the SAC lens are made of a glass material to protect the lenses from thermal deformation. In addition, they have aspheric shapes to improve optical performances. This paper presents a mold core grinding process for an asymmetrical aspheric lens and a GMP (glass molding press), what can be used to make aspheric cylindrical lenses for use as FACs or SACs, and a protection filter made by using IAD (ion-beam-assisted deposition). Finally, we developed the aspheric cylindrical lenses and the protection filter for a 10-W semiconductor laser module.

  2. Substrate effects on the formation of flat Ag films on (110) surfaces of III-V compound semiconductors

    International Nuclear Information System (INIS)

    Chao, K.; Zhang, Z.; Ebert, P.; Shih, C.K.

    1999-01-01

    Ag films grown at 135 K on (110) surfaces of III-V compound semiconductors and annealed at room temperature are investigated by scanning tunneling microscopy and low-energy electron diffraction. Ag films on Ga-V semiconductors are well ordered, atomically flat, and exhibit a specific critical thickness, which is a function of the substrate material. Films grown on In-V semiconductors are still rather flat, but significantly more disordered. The (111) oriented Ag films on III-arsenides and III-phosphides exhibit a clear twofold superstructure. Films on III-antimonides exhibit threefold low-energy electron diffraction images. The morphology of the Ag films can be explained on the basis of the electronic growth mechanism. copyright 1999 The American Physical Society

  3. Plastic lab-on-a-chip for fluorescence excitation with integrated organic semiconductor lasers.

    Science.gov (United States)

    Vannahme, Christoph; Klinkhammer, Sönke; Lemmer, Uli; Mappes, Timo

    2011-04-25

    Laser light excitation of fluorescent markers offers highly sensitive and specific analysis for bio-medical or chemical analysis. To profit from these advantages for applications in the field or at the point-of-care, a plastic lab-on-a-chip with integrated organic semiconductor lasers is presented here. First order distributed feedback lasers based on the organic semiconductor tris(8-hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2-methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM), deep ultraviolet induced waveguides, and a nanostructured microfluidic channel are integrated into a poly(methyl methacrylate) (PMMA) substrate. A simple and parallel fabrication process is used comprising thermal imprint, DUV exposure, evaporation of the laser material, and sealing by thermal bonding. The excitation of two fluorescent marker model systems including labeled antibodies with light emitted by integrated lasers is demonstrated.

  4. David Adler Lectureship Award Talk: III-V Semiconductor Nanowires on Silicon for Future Devices

    Science.gov (United States)

    Riel, Heike

    Bottom-up grown nanowires are very attractive materials for direct integration of III-V semiconductors on silicon thus opening up new possibilities for the design and fabrication of nanoscale devices for electronic, optoelectronic as well as quantum information applications. Template-Assisted Selective Epitaxy (TASE) allows the well-defined and monolithic integration of complex III-V nanostructures and devices on silicon. Achieving atomically abrupt heterointerfaces, high crystal quality and control of dimension down to 1D nanowires enabled the demonstration of FETs and tunnel devices based on In(Ga)As and GaSb. Furthermore, the strong influence of strain on nanowires as well as results on quantum transport studies of InAs nanowires with well-defined geometry will be presented.

  5. Instability of stationary lasing and self-starting mode locking in external-cavity semiconductor lasers

    International Nuclear Information System (INIS)

    Smetanin, Igor V; Vasil'ev, Petr P

    2009-01-01

    Parameters of external-cavity semiconductor lasers, when the stationary lasing becomes unstable, were analysed within the framework of a theoretical model of self-starting mode locking. In this case, a train of ultrashort pulses can be generated due to intrinsic nonlinearities of the laser medium. A decisive role of the transverse optical field nonuniformity, pump rate, and gain spectral bandwidth in the development of the instability of stationary lasing was demonstrated. (control of laser radiation parameters)

  6. Periodic dark pulse emission induced by delayed feedback in a quantum well semiconductor laser

    Directory of Open Access Journals (Sweden)

    L. Li

    2012-12-01

    Full Text Available We report the experimental observation of periodic dark pulse emission in a quantum-well semiconductor laser with delayed optical feedback. We found that under appropriate operation conditions the laser can also emit a stable train of dark pulses. The repetition frequency of the dark pulse is determined by the external cavity length. Splitting of the dark pulse was also observed. We speculate that the observed dark pulse is a kind of temporal cavity soliton formed in the laser.

  7. Semiconductor lasers with a continuous tuning range above 100 nm in the nearest IR spectral region

    Energy Technology Data Exchange (ETDEWEB)

    Kostin, Yu O; Lobintsov, A A; Shramenko, M V [OOO ' Opton' , Moscow (Russian Federation); Ladugin, M A; Marmalyuk, A A [Open Joint-Stock Company M.F. Stel' makh Polyus Research Institute, Moscow (Russian Federation); Chamorovsky, A Yu [Superlum Ltd., Unit B3, Fota Point Enterprise Park, Carrigtwohill, Co Cork (Ireland); Yakubovich, S D [Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)

    2015-08-31

    We have developed two new types of lasers based on quantum-confined semiconductor optical amplifiers with an acousto-optic tunable filter in an external fibre ring cavity. The lasers offer continuous wavelength tuning ranges from 780 to 885 and from 880 to 1010 nm, 20 mW of cw output power, and a tuning rate up to 10{sup 4} nm s{sup -1} at an instantaneous spectral linewidth less than 0.1 nm. (lasers)

  8. Experimental control of power dropouts by current modulation in a semiconductor laser with optical feedback

    International Nuclear Information System (INIS)

    Ticos, Catalin M; Andrei, Ionut R; Pascu, Mihail L; Bulinski, Mircea

    2011-01-01

    The injection current of an external-cavity semiconductor laser working in a regime of low-frequency fluctuations (LFFs) is modulated at several MHz. The rate of power dropouts in the laser emission is correlated with the amplitude and frequency of the modulating signal. The occurrence of dropouts becomes more regular when the laser is driven at 7 MHz, which is close to the dominant frequency of dropouts in the solitary laser. Driving the laser at 10 MHz also induces dropouts with a periodicity of 0.1 μs, resulting in LFFs with two dominant frequencies.

  9. Laser interferometric method for determining the carrier diffusion length in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Manukhov, V. V. [Saint Petersburg State University (Russian Federation); Fedortsov, A. B.; Ivanov, A. S., E-mail: ivaleks58@gmail.com [Saint Petersburg Mining University (Russian Federation)

    2015-09-15

    A new laser interferometric method for measuring the carrier diffusion length in semiconductors is proposed. The method is based on the interference–absorption interaction of two laser radiations in a semiconductor. Injected radiation generates additional carriers in a semiconductor, which causes a change in the material’s optical constants and modulation of the probing radiation passed through the sample. When changing the distance between carrier generation and probing points, a decrease in the carrier concentration, which depends on the diffusion length, is recorded. The diffusion length is determined by comparing the experimental and theoretical dependences of the probe signal on the divergence of the injector and probe beams. The method is successfully tested on semiconductor samples with different thicknesses and surface states and can be used in scientific research and the electronics industry.

  10. Mechanical properties of some binary, ternary and quaternary III-V compound semiconductor alloys

    International Nuclear Information System (INIS)

    Navamathavan, R.; Arivuoli, D.; Attolini, G.; Pelosi, C.; Choi, Chi Kyu

    2007-01-01

    Vicker's microindentation tests have been carried out on InP/InP, GaAs/InP, InGaAs/InP and InGaAsP/InP III-V compound semiconductor alloys. The detailed mechanical properties of these binary, ternary and quaternary epilayers were determined from the indentation experiments. Microindentation studies of (1 1 1) GaAs/InP both A and B faces show that the hardness value increases with load and attains a constant for further increase in load and the microhardness values were found to lie between 3.5 and 4.0 GPa. The microhardness values of InGaAs/InP epilayers with different thickness were found to lie between 3.93 and 4.312 GPa. The microhardness values of InGaAsP/InP with different elemental composition were found to lie between 5.08 and 5.73 GPa. The results show that the hardness of the quaternary alloy drastically increases, the reason may be that the increase in As concentration hardens the lattice when phosphorous concentration is less and hardness decreases when phosphorous is increased. It was interestingly observed that the hardness value increases as we proceed from binary to quaternary III-V compound semiconductor alloys

  11. Dense Plasma Focus-Based Nanofabrication of III-V Semiconductors: Unique Features and Recent Advances.

    Science.gov (United States)

    Mangla, Onkar; Roy, Savita; Ostrikov, Kostya Ken

    2015-12-29

    The hot and dense plasma formed in modified dense plasma focus (DPF) device has been used worldwide for the nanofabrication of several materials. In this paper, we summarize the fabrication of III-V semiconductor nanostructures using the high fluence material ions produced by hot, dense and extremely non-equilibrium plasma generated in a modified DPF device. In addition, we present the recent results on the fabrication of porous nano-gallium arsenide (GaAs). The details of morphological, structural and optical properties of the fabricated nano-GaAs are provided. The effect of rapid thermal annealing on the above properties of porous nano-GaAs is studied. The study reveals that it is possible to tailor the size of pores with annealing temperature. The optical properties of these porous nano-GaAs also confirm the possibility to tailor the pore sizes upon annealing. Possible applications of the fabricated and subsequently annealed porous nano-GaAs in transmission-type photo-cathodes and visible optoelectronic devices are discussed. These results suggest that the modified DPF is an effective tool for nanofabrication of continuous and porous III-V semiconductor nanomaterials. Further opportunities for using the modified DPF device for the fabrication of novel nanostructures are discussed as well.

  12. Theory of semiconductor lasers from basis of quantum electronics to analyses of the mode competition phenomena and noise

    CERN Document Server

    Yamada, Minoru

    2014-01-01

    This book provides a unified and complete theory for semiconductor lasers, covering topics ranging from the principles of classical and quantum mechanics to highly advanced levels for readers who need to analyze the complicated operating characteristics generated in the real application of semiconductor lasers.   The author conducts a theoretical analysis especially on the instabilities involved in the operation of semiconductor lasers. A density matrix into the theory for semiconductor lasers is introduced and the formulation of an improved rate equation to help understand the mode competition phenomena which cause the optical external feedback noise is thoroughly described from the basic quantum mechanics. The derivation of the improved rate equation will allow readers to extend the analysis for the different types of semiconductor materials and laser structures they deal with.   This book is intended not only for students and academic researchers but also for engineers who develop lasers for the market, ...

  13. Group III nitride semiconductors for short wavelength light-emitting devices

    Science.gov (United States)

    Orton, J. W.; Foxon, C. T.

    1998-01-01

    The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of the visible region and extending well out into the ultraviolet (UV) range. They form a complete series of ternary alloys which, in principle, makes available any band gap within this range and the fact that they also generate efficient luminescence has been the main driving force for their recent technological development. High brightness visible light-emitting diodes (LEDs) are now commercially available, a development which has transformed the market for LED-based full colour displays and which has opened the way to many other applications, such as in traffic lights and efficient low voltage, flat panel white light sources. Continuously operating UV laser diodes have also been demonstrated in the laboratory, exciting tremendous interest for high-density optical storage systems, UV lithography and projection displays. In a remarkably short space of time, the nitrides have therefore caught up with and, in some ways, surpassed the wide band gap II-VI compounds (ZnCdSSe) as materials for short wavelength optoelectronic devices. The purpose of this paper is to review these developments and to provide essential background material in the form of the structural, electronic and optical properties of the nitrides, relevant to these applications. We have been guided by the fact that the devices so far available are based on the binary compound GaN (which is relatively well developed at the present time), together with the ternary alloys AlGaN and InGaN, containing modest amounts of Al or In. We therefore concentrate, to a considerable extent, on the properties of GaN, then introduce those of the alloys as appropriate, emphasizing their use in the formation of the heterostructures employed in devices. The nitrides crystallize preferentially in the hexagonal wurtzite structure and devices have so

  14. Hybrid III-V Silicon Lasers

    Science.gov (United States)

    Bowers, John

    2014-03-01

    Abstract: A number of important breakthroughs in the past decade have focused attention on Si as a photonic platform. We review here recent progress in this field, focusing on efforts to make lasers, amplifiers, modulators and photodetectors on or in silicon. We also describe optimum quantum well design and distributed feedback cavity design to reduce the threshold and increase the efficiency and power output. The impact active silicon photonic integrated circuits could have on interconnects, telecommunications and on silicon electronics is reviewed. Biography: John Bowers holds the Fred Kavli Chair in Nanotechnology, and is the Director of the Institute for Energy Efficiency and a Professor in the Departments of Electrical and Computer Engineering and Materials at UCSB. He is a cofounder of Aurrion, Aerius Photonics and Calient Networks. Dr. Bowers received his M.S. and Ph.D. degrees from Stanford University and worked for AT&T Bell Laboratories and Honeywell before joining UC Santa Barbara. Dr. Bowers is a member of the National Academy of Engineering and a fellow of the IEEE, OSA and the American Physical Society. He is a recipient of the OSA/IEEE Tyndall Award, the OSA Holonyak Prize, the IEEE LEOS William Streifer Award and the South Coast Business and Technology Entrepreneur of the Year Award. He and coworkers received the EE Times Annual Creativity in Electronics (ACE) Award for Most Promising Technology for the hybrid silicon laser in 2007. Bowers' research is primarily in optoelectronics and photonic integrated circuits. He has published ten book chapters, 600 journal papers, 900 conference papers and has received 54 patents. He has published 180 invited papers and conference papers, and given 16 plenary talks at conferences. As well as Chong Zhang.

  15. Frequency locking, quasiperiodicity, subharmonic bifurcations and chaos in high frequency modulated stripe geometry DH semiconductor lasers

    International Nuclear Information System (INIS)

    Zhao Yiguang

    1991-01-01

    The method of obtaining self-consistent solutions of the field equation and the rate equations of photon density and carrier concentration has been used to study frequecny locking, quasiperiodicity, subharmonic bifurcations and chaos in high frequency modulated stripe geometry DH semiconductor lasers. The results show that the chaotic behavior arises in self-pulsing stripe geometry semiconductor lasers. The route to chaos is not period-double, but quasiperiodicity to chaos. All of the results agree with the experiments. Some obscure points in previous theory about chaos have been cleared up

  16. Mode-Locked Semiconductor Lasers for Optical Communication Systems

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Oxenløwe, Leif Katsuo

    2005-01-01

    We present investigations on 10 and 40 GHz monolithic mode-locked lasers for applications in optical communications systems. New all-active lasers with one to three quantum wells have been designed, fabricated and characterized....

  17. Modification of semiconductor materials using laser-produced ion streams additionally accelerated in the electric fields

    International Nuclear Information System (INIS)

    Rosinski, M.; Badziak, B.; Parys, P.; Wolowski, J.; Pisarek, M.

    2009-01-01

    The laser-produced ion stream may be attractive for direct ultra-low-energy ion implantation in thin layer of semiconductor for modification of electrical and optical properties of semiconductor devices. Application of electrostatic fields for acceleration and formation of laser-generated ion stream enables to control the ion stream parameters in broad energy and current density ranges. It also permits to remove the useless laser-produced ions from the ion stream designed for implantation. For acceleration of ions produced with the use of a low fluence repetitive laser system (Nd:glass: 2 Hz, pulse duration: 3.5 ns, pulse energy:∼0.5 J, power density: 10 10 W/cm 2 ) in IPPLM the special electrostatic system has been prepared. The laser-produced ions passing through the diaphragm (a ring-shaped slit in the HV box) have been accelerated in the system of electrodes. The accelerating voltage up to 40 kV, the distance of the diaphragm from the target, the diaphragm diameter and the gap width were changed for choosing the desired parameters (namely the energy band of the implanted ions) of the ion stream. The characteristics of laser-produced Ge ion streams were determined with the use of precise ion diagnostic methods, namely: electrostatic ion energy analyser and various ion collectors. The laser-produced and post-accelerated Ge ions have been used for implantation into semiconductor materials for nanocrystal fabrication. The characteristics of implanted samples were measured using AES

  18. Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Walker, A. W., E-mail: alexandre.walker@ise.fraunhofer.de; Heckelmann, S.; Karcher, C.; Höhn, O.; Went, C.; Niemeyer, M.; Bett, A. W.; Lackner, D. [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany)

    2016-04-21

    A power-dependent relative photoluminescence measurement method is developed for double-heterostructures composed of III-V semiconductors. Analyzing the data yields insight into the radiative efficiency of the absorbing layer as a function of laser intensity. Four GaAs samples of different thicknesses are characterized, and the measured data are corrected for dependencies of carrier concentration and photon recycling. This correction procedure is described and discussed in detail in order to determine the material's Shockley-Read-Hall lifetime as a function of excitation intensity. The procedure assumes 100% internal radiative efficiency under the highest injection conditions, and we show this leads to less than 0.5% uncertainty. The resulting GaAs material demonstrates a 5.7 ± 0.5 ns nonradiative lifetime across all samples of similar doping (2–3 × 10{sup 17 }cm{sup −3}) for an injected excess carrier concentration below 4 × 10{sup 12 }cm{sup −3}. This increases considerably up to longer than 1 μs under high injection levels due to a trap saturation effect. The method is also shown to give insight into bulk and interface recombination.

  19. Heterogeneous Silicon III-V Mode-Locked Lasers

    Science.gov (United States)

    Davenport, Michael Loehrlein

    Mode-locked lasers are useful for a variety of applications, such as sensing, telecommunication, and surgical instruments. This work focuses on integrated-circuit mode-locked lasers: those that combine multiple optical and electronic functions and are manufactured together on a single chip. While this allows production at high volume and lower cost, the true potential of integration is to open applications for mode-locked laser diodes where solid state lasers cannot fit, either due to size and power consumption constraints, or where small optical or electrical paths are needed for high bandwidth. Unfortunately, most high power and highly stable mode-locked laser diode demonstrations in scientific literature are based on the Fabry-Perot resonator design, with cleaved mirrors, and are unsuitable for use in integrated circuits because of the difficulty of producing integrated Fabry-Perot cavities. We use silicon photonics and heterogeneous integration with III-V gain material to produce the most powerful and lowest noise fully integrated mode-locked laser diode in the 20 GHz frequency range. If low noise and high peak power are required, it is arguably the best performing fully integrated mode-locked laser ever demonstrated. We present the design methodology and experimental pathway to realize a fully integrated mode-locked laser diode. The construction of the device, beginning with the selection of an integration platform, and proceeding through the fabrication process to final optimization, is presented in detail. The dependence of mode-locked laser performance on a wide variety of design parameters is presented. Applications for integrated circuit mode-locked lasers are also discussed, as well as proposed methods for using integration to improve mode-locking performance to beyond the current state of the art.

  20. Theory for passive mode-locking in semiconductor laser structures including the effects of self-phase modulation, dispersion and pulse collisions

    NARCIS (Netherlands)

    Koumans, R.G.M.P.; Roijen, van R.

    1996-01-01

    We present a theory for passive mode-locking in semiconductor laser structures using a semiconductor laser amplifier and absorber. The mode-locking system is described in terms of the different elements in the semiconductor laser structure. We derive mode-locking conditions and show how other

  1. III-V semiconductors for photoelectrochemical applications: surface preparation and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Fertig, Dominic; Schaechner, Birgit; Calvet, Wofram; Kaiser, Bernhard; Jaegermann, Wolfram [TU Darmstadt, Fachbereich Materialwissenschaft, Fachgebiet Oberflaechenforschung (Germany)

    2011-07-01

    III-V semiconductors are promising reference systems for photoelectrochemical energy conversion. Therefore we have studied the influence of different acids and acidic solutions on the etching of p-doped gallium-arsenide and gallium-phosphide single crystal surfaces. From our experiments we conclude, that etching with HCl and subsequent annealing up to 450 C gives the best results for the removal of the carbonates and the oxides without affecting the quality of the sample. By treating the surfaces with ''piranha''-solution (H{sub 2}SO{sub 4}:H{sub 2}O{sub 2}:H{sub 2}O/7:2:1), the creation of an oxide layer with well defined thickness can be achieved. For the creation of an efficient photoelectrochemical cell, Pt nanoparticles have been deposited from solution. These surfaces are then characterized by photoelectron spectroscopy and AFM. Further electrochemical measurements try to correlate the effect of the surface cleaning and the Pt deposition on the photoactivity of the GaAs- and GaP-semiconductors.

  2. Structural properties of III-V zinc-blende semiconductors under pressure

    International Nuclear Information System (INIS)

    Froyen, S.; Cohen, M.L.

    1983-01-01

    The pseudopotential method within the local-density approximation is used to investigate the static and structural properties of some III-V compound semiconductors. Comparisons of calculated total energies as a function of volume and structure yield information about solid-solid phase transformations. At high pressures the results indicate that several metallic structures are lower in energy than the zinc-blende structure. From our results the compounds (AlP, AlAs, GaP, and GaAs) can be divided into two classes. In the Ga compounds, we find a pressure-induced phase transformation to either rocksalt, β-Sn, or NiAs, whereas in the Al compounds rocksalt and NiAs are stabilized with respect to β-Sn. All structures except zinc blende are metallic. We discuss the electronic structure of each phase and show how it relates to structural stability

  3. Acousto-optic modulation of III-V semiconductor multiple quantum wells

    International Nuclear Information System (INIS)

    Smith, D.L.; Kogan, S.M.; Ruden, P.P.; Mailhiot, C.

    1996-01-01

    We present an analysis of the effect of surface acoustic waves (SAW close-quote s) on the optical properties of III-V semiconductor multiple quantum wells (MQW close-quote s). Modulation spectra at the fundamental and second harmonic of the SAW frequency are presented. The SAW modulates the optical properties of the MQW primarily by changing optical transition energies. The SAW generates both strains, which modulate the transition energies by deformation potential effects, and electric fields, which modulate the transition energies by the quantum confined Stark effect. We find that modulation of the transition energies by strain effects is usually more important than by electric-field effects. If large static electric fields occur in the MQW, the SAW-generated electric field can mix with the static field to give optical modulation, which is comparable in magnitude to modulation from the deformation potential effect. If there are no large static electric fields, modulation by the SAW-generated fields is negligible. A large static electric field distributes oscillator strength among the various optical transitions so that no single transition is as strong as the primary allowed transitions without a static electric field. To achieve the maximum modulation for fixed SAW parameters, it is best to modulate a strong optical transition. Thus optimum modulation occurs when there are no large static electric fields present and that modulation is primarily from deformation potential effects. We specifically consider Ga x In 1-x As/Ga x Al 1-x As MQW close-quote s grown on (100) and (111) oriented substrates, but our general conclusions apply to other type I MQW close-quote s fabricated from III-V semiconductors. copyright 1996 The American Physical Society

  4. Fiber optical laser spot microscope: A new concept for photoelectrochemical characterization of semiconductor electrodes

    OpenAIRE

    Carlsson, Per; Holmström, Bertil; Uosaki, Kohei; Kita, Hideaki

    1988-01-01

    A fiber optical laser spot microscope, which allows the simultaneous measurements of photocurrent and reflected light intensity or the measurement of laser spot photocurrent under the illumination of other light sources, has been developed to study semiconductor/electrolyte interfaces. The capability of this microscope was demonstrated on as-cleaved and Pt-treated p-InSe. The Pt treatment increased the photocurrent and improved the lateral resolution due to the increase of surface reaction ra...

  5. Mode-Locking in Broad-Area Semiconductor Lasers Enhanced by Picosecond-Pulse Injection

    OpenAIRE

    Kaiser, J; Fischer, I; Elsasser, W; Gehrig, E; Hess, O

    2004-01-01

    We present combined experimental and theoretical investigations of the picosecond emission dynamics of broad-area semiconductor lasers (BALs). We enhance the weak longitudinal self-mode-locking that is inherent to BALs by injecting a single optical 50-ps pulse, which triggers the output of a distinct regular train of 13-ps pulses. Modeling based on multimode Maxwell-Bloch equations illustrates how the dynamic interaction of the injected pulse with the internal laser field efficiently couples ...

  6. Bistability and self-oscillations effects in a polariton-laser semiconductor microcavity

    International Nuclear Information System (INIS)

    Cotta, E A; Matinaga, F M

    2007-01-01

    We report an experimental observation of polaritonic optical bistability of the laser emission in a planar semiconductor microcavity with a 100 0 A GaAs single quantum well in the strong-coupling regime. The bistability curves show crossings that indicate a competition between a Kerr-like effect induced by the polariton population and thermal effects. Associated with the bistability, laser-like emission occurs at the bare cavity mode

  7. Digitally tunable dual wavelength emission from semiconductor ring lasers with filtered optical feedback

    International Nuclear Information System (INIS)

    Khoder, Mulham; Verschaffelt, Guy; Nguimdo, Romain Modeste; Danckaert, Jan; Leijtens, Xaveer; Bolk, Jeroen

    2013-01-01

    We report on a novel integrated approach to obtain dual wavelength emission from a semiconductor laser based on on-chip filtered optical feedback. Using this approach, we show experiments and numerical simulations of dual wavelength emission of a semiconductor ring laser. The filtered optical feedback is realized on-chip by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifiers are placed in the feedback loop in order to control the feedback strength of each wavelength channel independently. By tuning the current injected into each of the amplifiers, we can effectively cancel the gain difference between the wavelength channels due to fabrication and material dichroism, thus resulting in stable dual wavelength emission. We also explore the accuracy needed in the operational parameters to maintain this dual wavelength emission. (letter)

  8. Laser action on rare earth doped nitride semiconductor thin layers

    International Nuclear Information System (INIS)

    Oussif, A.; Diaf, M.

    2010-01-01

    Complete text of publication follows. The structure, chemical composition, properties, and their relationships in solids lay the foundation of materials science. Recently, great interest in rare-earth (RE)-doped wide-bandgap semiconductors, which combine the electronic properties of semiconductors with the unique luminescence features of RE ions, is from the fundamental standpoint of structure-composition-properties of solids. At first, a significant amount of work has been reported on the study of infrared emissions from Er 3+- doped semiconductors because Er 3+ exhibits luminescence at 1.54 μm, a wavelength used in optical communications. Since Steckl and Birkhahn first reported visible emission associated with Er from GaN:Er films, the RE-doped semiconductors have received considerable interest for possible application in light emitting devices. Molecular-beam epitaxy (MBE) and metalorganic chemical vapour deposition (MOCVD) have been used mainly to grow GaN host films. The RE dopants were typically incorporated into the host films by in situ doping during the growth or by ion implantation after the growth. GaN doped with rare-earth elements (RE) hold significant potential for applications in optical devices, since they show sharp intense luminescence which is only minimally affected by temperature variations. Among the various RE dopants, Eu seems to be the most interesting, since it yields red luminescence 622 nm which has not been realized in commercially available light emitting devices (LEDs) that use InGaN active layers. We have earlier reported single crystalline growth of Eu-doped GaN and nearly temperature independent red luminescence at 622 nm originating from the intra-4f-4f transition of the Eu 3+ ion. The red luminescence was analyzed and determined to be generated through trap-level-mediated energy transfer from the semiconductor host.

  9. Laser Doppler perfusion imaging with a complimentary metal oxide semiconductor image sensor

    NARCIS (Netherlands)

    Serov, Alexander; Steenbergen, Wiendelt; de Mul, F.F.M.

    2002-01-01

    We utilized a complimentary metal oxide semiconductor video camera for fast f low imaging with the laser Doppler technique. A single sensor is used for both observation of the area of interest and measurements of the interference signal caused by dynamic light scattering from moving particles inside

  10. Design and evaluation of modelocked semiconductor lasers for low noise and high stability

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Christiansen, Lotte Jin

    2005-01-01

    We present work on design of monolithic mode-locked semiconductor lasers with focus on the gain medium. The use of highly inverted quantum wells in a low-loss waveguide enables both low quantum noise, low-chirped pulses and a large stability region. Broadband noise measurements are performed...

  11. Numerical investigations on the performance of external-cavity mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper

    2004-01-01

    The performance of an external-cavity mode-locked semiconductor laser is analyzed theoretically and numerically. Passive mode-locking is described using a fully-distributed time-domain model including fast effects, spectral hole burning and carrier heating. We provide optimization rules in order ...

  12. Analog direct-modulation behavior of semiconductor laser transmitters using optical FM demodulation

    NARCIS (Netherlands)

    Yabre, G.S.

    1998-01-01

    In this paper, we report a theoretical investigation of the analog modulation performance of a semiconductor laser transmitter which employs the direct optical FM demodulation. This analysis is based on the rate equations in which Langevin noise functions are included. The optical FM response has

  13. A theoretical analysis for gigabit/second pulse code modulation of semiconductor lasers

    DEFF Research Database (Denmark)

    Danielsen, Magnus

    1976-01-01

    Investigation of the rate equations of a semiconductor laser suggests that bit rates of 3-4 Gbit/s can be achieved. Delay, ringing transients, and charge-storage effects can be removed by adjusting the dc-bias current and the peak and width of the current pulse to values prescribed by simple...

  14. Single-mode very wide tunability in laterally coupled semiconductor lasers with electrically controlled reflectivities

    Science.gov (United States)

    Griffel, Giora; Chen, Howard Z.; Grave, Ilan; Yariv, Amnon

    1991-04-01

    The operation of a novel multisection structure comprised of laterally coupled gain-guided semiconductor lasers is demonstrated. It is shown that tunable single longitudinal mode operation can be achieved with a high degree of frequency selectivity. The device has a tuning range of 14.5 nm, the widest observed to date in a monolithic device.

  15. Return-map for low-frequency fluctuations in semiconductor lasers with optical feedback

    DEFF Research Database (Denmark)

    Mørk, Jesper; Sabbatier, H.; Sørensen, Mads Peter

    1999-01-01

    We show that the phenomenon of low-frequency fluctuations (LFF) , commonly observed in semiconductor lasers with optical feedback, can be explained by a simple return-map, implying a tremendous simplification in the description of the slow time-scale dynamics of the system. Experimentally observed...

  16. Study on biological effect on mice and use safety of 830 nm semiconductor laser

    International Nuclear Information System (INIS)

    Li Keqiu; Li Jian; Miao Xuhong; Liu Shujuan; Li Guang

    2006-01-01

    Objective: To study biological effect on mice by 830 nm semiconductor laser in different dosage, and determine the optimal irradiating dosage by observing and analyzing the immunoregulation and cytogenetical damage of mice after irradiation. Methods: The spleen and thymus areas of Kunming mice were irradiated in vitro by 830 nm semiconductor laser of 30 mW for 5 min, 10 min and 20 min per day respectively, then the blood samples were collected from orbital vein. Further, the spleen tissue and sternum marrow were collected soon after the mice were killed. Afterwards, IgG, dopamine, serotonin in serum were detected respectively. Besides these, the rate of lymphocyte transformation and the rate of micronuclei in marrow polychromatic erythrocytes were also determined. Results: With the extending of irradiating time, the detected factors changed differently. Statistically, there were differences in IgG concentration and the rate of lymphocyte transformation between 10 min group, 20 min group and control group respectively, but no difference between each experimental group were found. /compare with control group, serotonin concentration in 10 min group increased, and there was statistical difference between these two groups, while there was no difference in dopamine concentration among each group. Besides these, the rate of micronuclei in 20 min group increased. Conclusion: In this study, irradiation by semiconductor laser for appropriate time can improve immuno function of mice, but irradiation in high dosage will result in the damage of genetic material. The optimal time of irradiation by 830 nm semiconductor laser was 10 min. (authors)

  17. High gain semiconductor optical amplifier — Laser diode at visible wavelength

    KAUST Repository

    Shen, Chao; Lee, Changmin; Ng, Tien Khee; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2017-01-01

    We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

  18. Ultrawideband pulse generation based on overshooting effect in gain-switched semiconductor laser

    DEFF Research Database (Denmark)

    Torres-Company, V.; Prince, Kamau; Tafur Monroy, Idelfonso

    2008-01-01

    We demonstrate an alternative procedure to achieve ultrawideband (UWB) radio-frequency (RF) doublet impulses. It is based on the overshooting effect appearing by biasing a semiconductor laser close to the threshold with a large-amplitude signal. Specifically, with an optical bandpass filter...... a reliable, easy, and low-cost alternative for RF UWB impulse generation....

  19. High gain semiconductor optical amplifier — Laser diode at visible wavelength

    KAUST Repository

    Shen, Chao

    2017-02-07

    We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

  20. Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis

    DEFF Research Database (Denmark)

    Mørk, Jesper; Tromborg, Bjarne; Christiansen, Peter Leth

    1988-01-01

    Near-threshold operation of a semiconductor laser exposed to moderate optical feedback may lead to low-frequency fluctuations. In the same region, a kink is observed in the light-current characteristic. Here it is demonstrated that these nonlinear phenomena are predicted by a noise driven multimode...

  1. Linewidth broadening in a distributed feedback laser integrated with a semiconductor optical amplifier

    DEFF Research Database (Denmark)

    Champagne, A.; Camel, J.; Maciejko, R.

    2002-01-01

    The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A modified expression for the linewidth in the case of antireflection-coated SOA output facets is derived and ...

  2. Spectral characteristics of DFB lasers in presence of a semiconductor optical amplifier

    DEFF Research Database (Denmark)

    Champagne, A.; Camel, J.; Maciejko, R.

    2002-01-01

    The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A numerical model combining finite element calculations in the transverse x - y plane and a longitudinal model...

  3. Direct profiling of III/V semiconductor nanostructures at the atomic level by cross-sectional scanning tunneling microscopy

    NARCIS (Netherlands)

    Bruls, D.M.

    2003-01-01

    By means of modern epitaxial growth techniques it is possible to fabricate semiconductor structures that are faster, cheaper and more complicated. They find their implementation in e.g. quantum dot or quantum well lasers. To obtain extra functionality, these devices have to be made so small, that

  4. Semipolar III-nitride laser diodes with zinc oxide cladding.

    Science.gov (United States)

    Myzaferi, Anisa; Reading, Arthur H; Farrell, Robert M; Cohen, Daniel A; Nakamura, Shuji; DenBaars, Steven P

    2017-07-24

    Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (202¯1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm 2 and a threshold voltage of 10.3 V in a semipolar (202¯1) III-nitride LD with ZnO top cladding.

  5. Growth and Characterization of III-V Semiconductors for Device Applications

    Science.gov (United States)

    Williams, Michael D.

    2000-01-01

    The research goal was to achieve a fundamental understanding of the physical processes occurring at the surfaces and interfaces of epitaxially grown InGaAs/GaAs (100) heterostructures. This will facilitate the development of quantum well devices for infrared optical applications and provide quantitative descriptions of key phenomena which impact their performance. Devices impacted include high-speed laser diodes and modulators for fiber optic communications at 1.55 micron wavelengths and intersub-band lasers for longer infrared wavelengths. The phenomenon of interest studied was the migration of indium in InGaAs structures. This work centered on the molecular beam epitaxy reactor and characterization apparatus donated to CAU by AT&T Bell Laboratories. The material characterization tool employed was secondary ion mass spectrometry. The training of graduate and undergraduate students was an integral part of this program. The graduate students received a thorough exposure to state-of-the-art techniques and equipment for semiconductor materials analysis as part of the Master''s degree requirement in physics. The undergraduates were exposed to a minority scientist who has an excellent track record in this area. They also had the opportunity to explore surface physics as a career option. The results of the scientific work was published in a refereed journal and several talks were presented professional conferences and academic seminars.

  6. Semiconductor and ceramic microstructure made by single mode fiber laser

    International Nuclear Information System (INIS)

    Pawlak, R; Tomczyk, M; Walczak, M; Domagalski, P

    2014-01-01

    In the paper the results of micromachining of 3D microstructures of microsystems made from silicon and alumina ceramic using a single mode fiber laser (1064 nm) are presented. The quality of obtained structures and its smallest dimensions with acceptable maintained quality were examined. The influence of variable parameters of laser processing with changing of mapping scale on geometrical features of structures was identified.

  7. Interband optical pulse injection locking of quantum dot mode-locked semiconductor laser.

    Science.gov (United States)

    Kim, Jimyung; Delfyett, Peter J

    2008-07-21

    We experimentally demonstrate optical clock recovery from quantum dot mode-locked semiconductor lasers by interband optical pulse injection locking. The passively mode-locked slave laser oscillating on the ground state or the first excited state transition is locked through the injection of optical pulses generated via the opposite transition bands, i.e. the first excited state or the ground state transition from the hybridly mode-locked master laser, respectively. When an optical pulse train generated via the first excited state from the master laser is injected to the slave laser oscillating via ground state, the slave laser shows an asymmetric locking bandwidth around the nominal repetition rate of the slave laser. In the reverse injection case of, i.e. the ground state (master laser) to the first excited state (slave laser), the slave laser does not lock even though both lasers oscillate at the same cavity frequency. In this case, the slave laser only locks to higher injection rates as compared to its own nominal repetition rate, and also shows a large locking bandwidth of 6.7 MHz.

  8. Vibration-tolerant narrow-linewidth semiconductor disk laser using novel frequency-stabilisation schemes

    Science.gov (United States)

    Hunter, Craig R.; Jones, Brynmor E.; Schlosser, Peter; Sørensen, Simon Toft; Strain, Michael J.; McKnight, Loyd J.

    2018-02-01

    This paper will present developments in narrow-linewidth semiconductor-disk-laser systems using novel frequencystabilisation schemes for reduced sensitivity to mechanical vibrations, a critical requirement for mobile applications. Narrow-linewidth single-frequency lasers are required for a range of applications including metrology and highresolution spectroscopy. Stabilisation of the laser was achieved using a monolithic fibre-optic ring resonator with free spectral range of 181 MHz and finesse of 52 to act as passive reference cavity for the laser. Such a cavity can operate over a broad wavelength range and is immune to a wide band of vibrational frequency noise due to its monolithic implementation. The frequency noise of the locked system has been measured and compared to typical Fabry-Perotlocked lasers using vibration equipment to simulate harsh environments, and analysed here. Locked linewidths of portable, narrow-linewidth laser system for harsh environments that can be flexibly designed for a range of applications.

  9. Semiconductor laser irradiation improves root canal sealing during routine root canal therapy

    Science.gov (United States)

    Hu, Xingxue; Wang, Dashan; Cui, Ting; Yao, Ruyong

    2017-01-01

    Objective To evaluate the effect of semiconductor laser irradiation on root canal sealing after routine root canal therapy (RCT). Methods Sixty freshly extracted single-rooted human teeth were randomly divided into six groups (n = 10). The anatomic crowns were sectioned at the cementoenamel junction and the remaining roots were prepared endodontically with conventional RCT methods. Groups A and B were irradiated with semiconductor laser at 1W for 20 seconds; Groups C and D were ultrasonically rinsed for 60 seconds as positive control groups; Groups E and F without treatment of root canal prior to RCT as negative control groups. Root canal sealing of Groups A, C and E were evaluated by measurements of apical microleakage. The teeth from Groups B, D and F were sectioned, and the micro-structures were examined with scanning electron microscopy (SEM). One way ANOVA and LSD-t test were used for statistical analysis (α = .05). Results The apical sealing of both the laser irradiated group and the ultrasonic irrigated group were significantly different from the control group (pirrigated group (p>0.5). SEM observation showed that most of the dentinal tubules in the laser irradiation group melted, narrowed or closed, while most of the dentinal tubules in the ultrasonic irrigation group were filled with tooth paste. Conclusion The application of semiconductor laser prior to root canal obturation increases the apical sealing of the roots treated. PMID:28957407

  10. A photonic ultra-wideband pulse generator based on relaxation oscillations of a semiconductor laser

    DEFF Research Database (Denmark)

    Yu, Xianbin; Gibbon, Timothy Braidwood; Pawlik, Michal

    2009-01-01

    A photonic ultra-wideband (UWB) pulse generator based on relaxation oscillations of a semiconductor laser is proposed and experimentally demonstrated. We numerically simulate the modulation response of a direct modulation laser (DML) and show that due to the relaxation oscillations of the laser......, the generated signals with complex shape in time domain match the Federal Communications Commission (FCC) mask in the frequency domain. Experimental results using a DML agree well with simulation predictions. Furthermore, we also experimentally demonstrate the generation of FCC compliant UWB signals...

  11. Nanoimprinted organic semiconductor laser pumped by a light-emitting diode.

    Science.gov (United States)

    Tsiminis, Georgios; Wang, Yue; Kanibolotsky, Alexander L; Inigo, Anto R; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

    2013-05-28

    An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabrication compatible with mass-produced LEDs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Molecular beam epitaxy growth and characterization of two-six materials for visible semiconductor lasers

    Science.gov (United States)

    Zeng, Linfei

    This thesis proposes the molecular beam epitaxy (MBE) growth and characterization of a new Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se based semiconductor materials system on InP substrates for visible light emitting diodes (LED) and lasers. The growth conditions for lattice-matched Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se layers with the desired bandgap have been established and optimized. A chemical etching technique to measure the defect density of Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se materials has been established. The accuracy of this method for revealing stacking faults and dislocations was verified by plan-view TEM. Using the techniques such as III-V buffer layer, Zn-irradiation, low-temperature growth, ZnCdSe interfacial layer and growth interruption to improve the quality of the interface of III-V and II-VI, the material quality of Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se has been improved dramatically. Defect density has been reduced from 10sp{10}\\ cmsp{-2} to {˜}5×10sp4\\ cmsp{-2}. The properties of this material system such as the quality and strain state in the epilayer, the dependence of bandgap on temperature, and the band offset have been studied by using double crystal x-ray diffraction, photoluminescence and capacitance voltage measurements. The ZnCdSe/ZnCdMgSe based quantum well (QW) structures have been grown and studied. Optically pumped lasing with emission range from red to blue has been obtained from ZnCdSe/ZnCdMgSe based separate-confinement single QW laser structures. The results demonstrate the potential for these materials as integrated full color display devices. Preliminary studies of the degradation behavior of ZnCdSe/ZnCdMgSe QW were performed. No dark line defects (DLDs) were observed during the degradation. A very strong room temperature differential negative resistance behavior was observed from Al/Znsb{0.61}Cdsb{0.39}Se/nsp+-InP devices, which is useful in millimeter-wave applications. We also found that these devices can be set to either in highly conductive or

  13. Research of time fiducial and imaging VISAR laser for Shenguang-III laser facility

    Science.gov (United States)

    Zhang, Rui; Wang, Zhenguo; Tian, Xiaocheng; Zhou, Dandan; Zhu, Na; Wang, Jianjun; Li, Mingzhong; Xu, Dangpeng; Dang, Zhao; Hu, Dongxia; Zhu, Qihua; Zheng, Wanguo; Wang, Feng

    2015-10-01

    Time fiducial laser is an important tool for the precise measurement in high energy density physics experiments. The VISAR probe laser is also vital for shock wave diagnostics in ICF experiments. Here, time fiducial laser and VISAR light were generated from one source on SG-III laser facility. After generated from a 1064-nm DFB laser, the laser is modulated by an amplitude modulator driven by 10 GS/s arbitrary waveform generator. Using time division multiplexing technology, the ten-pulse time fiducial laser and the 20-ns VISAR pulse were split by a 1×2 multiplexer and then chosen by two acoustic optic modulators. Using the technique, cost of the system was reduced. The technologies adopted in the system also include pulse polarization stabilization, high precision fiber coupling and energy transmission. The time fiducial laser generated synchronized 12-beam 2ω and 4-beam 3ω laser, providing important reference marks for different detectors and making it convenient for the analysis of diagnostic data. After being amplified by fiber amplifiers and Nd:YAG rod amplifiers, the VISAR laser pulse was frequency-converted to 532-nm pulse by a thermally controlled LBO crystal with final output energy larger than 20 mJ. Finally, the green light was coupled into a 1-mm core diameter, multimode fused silica optical fiber and propagated to the imaging VISAR. The VISAR laser has been used in the VISAR diagnostic physics experiments. Shock wave loading and slowdown processes were measured. Function to measure velocity history of shock wave front movement in different kinds of materials was added to the SG-III laser facility.

  14. Optical and Temporal Carrier Dynamics Investigations of III-Nitrides for Semiconductor Lighting

    KAUST Repository

    Ajia, Idris A.

    2018-05-22

    III-nitride semiconductors suffer significant efficiency limitations; ‘efficiency’ being an umbrella term that covers an extensive list of challenges that must be overcome if they are to fulfil their vast potential. To this end, it is imperative to understand the underlying phenomena behind such limitations. In this dissertation, I combine powerful optical and structural characterization techniques to investigate the effect of different defects on the carrier dynamics in III-nitride materials for light emitting devices. The results presented herein will enhance the current understanding of the carrier mechanisms in such devices, which will lead to device efficiency improvements. In the first part of this dissertation, the effects of some important types of crystal defects present in III-nitride structures are investigated. Here, two types of defects are studied in two different III-nitride-based light emitting structures. The first defects of interest are V-pit defects in InGaN/GaN multiple quantum well (MQW) blue LEDs, where their contribution to the high-efficiency of such LEDs is discussed. In addition, the effect of these defects on the efficiency droop phenomenon in these LEDs is elucidated. Secondly, the optical effects of grain boundary defects in AlN-rich AlGaN/AlGaN MQWs is studied. In this study, it is shown that grain boundary defects may result in abnormal carrier localization behavior in these deep ultraviolet (UV) structures. While both defects are treated individually, it is evident from these studies that threading dislocation (TD) defects are an underlying contributor to the more undesirable outcomes of the said defects. In the second part, the dissertation reports on the carrier dynamics of III-nitride LED structures grown on emerging substrates—as possible efficiency enhancing techniques—aimed at mitigating the effects of TD defects. Thus, the carrier dynamics of GaN/AlGaN UV MQWs grown, for the first time, on (2̅01) – oriented β-Ga2O

  15. Compact 2050 nm Semiconductor Diode Laser Master Oscillator, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This Phase I effort seeks to develop DFB laser master oscillators at the novel wavelength of 12050 nm. Two prototypes will be built, tested, and delivered ....

  16. The theory of laser annealing of disordered semiconductors

    International Nuclear Information System (INIS)

    Noga, M.

    1980-01-01

    A theoretical explanation of the disorder-order phase transition concerning the ion implanted Si pulsed laser annealing is given. The phase transition is related to the Bose condensation of electron-hole plasmons. (author)

  17. Single-particle spectroscopy of I-III-VI semiconductor nanocrystals: spectral diffusion and suppression of blinking by two-color excitation.

    Science.gov (United States)

    Sharma, Dharmendar Kumar; Hirata, Shuzo; Bujak, Lukasz; Biju, Vasudevanpillai; Kameyama, Tatsuya; Kishi, Marino; Torimoto, Tsukasa; Vacha, Martin

    2016-07-14

    Ternary I-III-VI semiconductor nanocrystals have been explored as non-toxic alternatives to II-VI semiconductors for optoelectronic and sensing applications, but large photoluminescence spectral width and moderate brightness restrict their practical use. Here, using single-particle photoluminescence spectroscopy on nanocrystals of (AgIn)xZn2(1-x)S2 we show that the photoluminescence band is inhomogeneously broadened and that size distribution is the dominant factor in the broadening. The residual homogeneous linewidth of individual nanocrystals reaches up to 75% of the ensemble spectral width. Single nanocrystals undergo spectral diffusion which also contributes to the inhomogeneous band. Excitation with two lasers with energies above and below the bandgap reveals coexistence of two emitting donor states within one particle. Spectral diffusion in such particles is due to temporal activation and deactivation of one such state. Filling of a trap state with a lower-energy laser enables optical modulation of photoluminescence intermittency (blinking) and leads to an almost two-fold increase in brightness.

  18. Application of laser spot cutting on spring contact probe for semiconductor package inspection

    Science.gov (United States)

    Lee, Dongkyoung; Cho, Jungdon; Kim, Chan Ho; Lee, Seung Hwan

    2017-12-01

    A packaged semiconductor has to be electrically tested to make sure they are free of any manufacturing defects. The test interface, typically employed between a Printed Circuit Board and the semiconductor devices, consists of densely populated Spring Contact Probe (SCP). A standard SCP typically consists of a plunger, a barrel, and an internal spring. Among these components, plungers are manufactured by a stamping process. After stamping, plunger connecting arms need to be cut into pieces. Currently, mechanical cutting has been used. However, it may damage to the body of plungers due to the mechanical force engaged at the cutting point. Therefore, laser spot cutting is considered to solve this problem. The plunger arm is in the shape of a rectangular beam, 50 μm (H) × 90 μm (W). The plunger material used for this research is gold coated beryllium copper. Laser parameters, such as power and elapsed time, have been selected to study laser spot cutting. Laser material interaction characteristics such as a crater size, material removal zone, ablation depth, ablation threshold, and full penetration are observed. Furthermore, a carefully chosen laser parameter (Etotal = 1000mJ) to test feasibility of laser spot cutting are applied. The result show that laser spot cutting can be applied to cut SCP.

  19. Threshold reduction through photon recycling in semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Gigase, Y.B.; Harder, C.S.; Kesler, M.P.; Meier, H.P. (IBM Research Division, Zurich Research Laboratory, CH-8803 Rueschlikon (Switzerland)); Van Zeghbroeck, B. (University of Colorado, Boulder, CO (USA))

    1990-09-24

    The threshold pump power of an AlGaAs-GaAs ridge quantum well laser diode has been reduced by 42% by recycling the spontaneous emission. An integrated photodiode absorbs the spontaneous radiation emitted by the laser diode and converts it back into electrical power. The recycling of this power results in a reduction of the electrical power required to reach the lasing threshold.

  20. III International Conference on Laser and Plasma Researches and Technologies

    Science.gov (United States)

    2017-12-01

    A.P. Kuznetsov and S.V. Genisaretskaya III Conference on Plasma and Laser Research and Technologies took place on January 24th until January 27th, 2017 at the National Research Nuclear University "MEPhI" (NRNU MEPhI). The Conference was organized by the Institute for Laser and Plasma Technologies and was supported by the Competitiveness Program of NRNU MEPhI. The conference program consisted of nine sections: • Laser physics and its application • Plasma physics and its application • Laser, plasma and radiation technologies in industry • Physics of extreme light fields • Controlled thermonuclear fusion • Modern problems of theoretical physics • Challenges in physics of solid state, functional materials and nanosystems • Particle accelerators and radiation technologies • Modern trends of quantum metrology. The conference is based on scientific fields as follows: • Laser, plasma and radiation technologies in industry, energetic, medicine; • Photonics, quantum metrology, optical information processing; • New functional materials, metamaterials, “smart” alloys and quantum systems; • Ultrahigh optical fields, high-power lasers, Mega Science facilities; • High-temperature plasma physics, environmentally-friendly energetic based on controlled thermonuclear fusion; • Spectroscopic synchrotron, neutron, laser research methods, quantum mechanical calculation and computer modelling of condensed media and nanostructures. More than 250 specialists took part in the Conference. They represented leading Russian scientific research centers and universities (National Research Centre "Kurchatov Institute", A.M. Prokhorov General Physics Institute, P.N. Lebedev Physical Institute, Troitsk Institute for Innovation and Fusion Research, Joint Institute for Nuclear Research, Moscow Institute of Physics and Tecnology and others) and leading scientific centers and universities from Germany, France, USA, Canada, Japan. We would like to thank heartily all of

  1. Fabrication of metal/semiconductor nanocomposites by selective laser nano-welding.

    Science.gov (United States)

    Yu, Huiwu; Li, Xiangyou; Hao, Zhongqi; Xiong, Wei; Guo, Lianbo; Lu, Yongfeng; Yi, Rongxing; Li, Jiaming; Yang, Xinyan; Zeng, Xiaoyan

    2017-06-01

    A green and simple method to prepare metal/semiconductor nanocomposites by selective laser nano-welding metal and semiconductor nanoparticles was presented, in which the sizes, phases, and morphologies of the components can be maintained. Many types of nanocomposites (such as Ag/TiO 2 , Ag/SnO 2 , Ag/ZnO 2 , Pt/TiO 2 , Pt/SnO 2 , and Pt/ZnO) can be prepared by this method and their corresponding performances were enhanced.

  2. Analytical Electron Diffraction from Iii-V and II-Vi Semiconductors

    Science.gov (United States)

    Spellward, Paul

    Available from UMI in association with The British Library. This thesis describes the development and evaluation of a number of new TEM-based techniques for the measurement of composition in ternary III-V and II-VI semiconductors. New methods of polarity determination in binary and ternary compounds are also presented. The theory of high energy electron diffraction is outlined, with particular emphasis on zone axis diffraction from well-defined strings. An account of TEM microstructural studies of Cd_{rm x}Hg _{rm 1-x}Te and CdTe epitaxial layers, which provided the impetus for developing the diffraction-based analytical techniques, is given. The wide range of TEM-based compositional determination techniques is described. The use of HOLZ deficiency lines to infer composition from a lattice parameter measurement is evaluated. In the case of Cd_{ rm x}Hg_{rm 1-x}Te, it is found to be inferior to other techniques developed. Studies of dynamical aspects of HOLZ diffraction can yield information about the dispersion surface from which a measure of composition may be obtained. This technique is evaluated for Al_{rm x}Ga_{rm 1-x} As, in which it is found to be of some use, and for Cd_{rm x}Hg _{rm 1-x}Te, in which the large Debye-Waller factor associated with mercury in discovered to render the method of little value. A number of critical voltages may be measured in medium voltage TEMs. The (111) zone axis critical voltage of Cd_{rm x}Hg _{rm 1-x}Te is found to vary significantly with x and forms the basis of an accurate technique for composition measurement in that ternary compound. Other critical voltage phenomena are investigated. In Al _{rm x}Ga_ {rm 1-x}As and other light ternaries, a non-systematic critical voltage is found to vary with x, providing a good indicator of composition. Critical voltage measurements may be made by conventional CBED or by various other techniques, which may also simultaneously yield information on the spatial variation of composition. The

  3. Pump spot size dependent lasing threshold in organic semiconductor DFB lasers fabricated via nanograting transfer.

    Science.gov (United States)

    Liu, Xin; Klinkhammer, Sönke; Wang, Ziyao; Wienhold, Tobias; Vannahme, Christoph; Jakobs, Peter-Jürgen; Bacher, Andreas; Muslija, Alban; Mappes, Timo; Lemmer, Uli

    2013-11-18

    Optically excited organic semiconductor distributed feedback (DFB) lasers enable efficient lasing in the visible spectrum. Here, we report on the rapid and parallel fabrication of DFB lasers via transferring a nanograting structure from a flexible mold onto an unstructured film of the organic gain material. This geometrically well-defined structure allows for a systematic investigation of the laser threshold behavior. The laser thresholds for these devices show a strong dependence on the pump spot diameter. This experimental finding is in good qualitative agreement with calculations based on coupled-wave theory. With further investigations on various DFB laser geometries prepared by different routes and based on different organic gain materials, we found that these findings are quite general. This is important for the comparison of threshold values of various devices characterized under different excitation areas.

  4. Pump spot size dependent lasing threshold in organic semiconductor DFB lasers fabricated via nanograting transfer

    DEFF Research Database (Denmark)

    Liu, Xin; Klinkhammer, Sönke; Wang, Ziyao

    2013-01-01

    material. This geometrically well-defined structure allows for a systematic investigation of the laser threshold behavior. The laser thresholds for these devices show a strong dependence on the pump spot diameter. This experimental finding is in good qualitative agreement with calculations based on coupled......Optically excited organic semiconductor distributed feedback (DFB) lasers enable efficient lasing in the visible spectrum. Here, we report on the rapid and parallel fabrication of DFB lasers via transferring a nanograting structure from a flexible mold onto an unstructured film of the organic gain......-wave theory. With further investigations on various DFB laser geometries prepared by different routes and based on different organic gain materials, we found that these findings are quite general. This is important for the comparison of threshold values of various devices characterized under different...

  5. Mode structure of delay-coupled semiconductor lasers: influence of the pump current

    International Nuclear Information System (INIS)

    Erzgraeber, Hartmut; Krauskopf, Bernd; Lenstra, Daan

    2005-01-01

    We consider two identical, mutually delay-coupled semiconductor lasers and show that their compound laser modes (CLMs)-the basic continuous wave solutions-depend rather sensitively on the pump current of the lasers. Specifically, we show with figures and accompanying animations how the underlying CLM structure and the associated locking region, where both lasers operate stably with the same frequency, change as a function of the pump current. Our results provide a natural transition between rather different CLM structures that have been reported in the literature. Moreover, we demonstrate how the locking region as well as the different types of instabilities at its boundary depend on the pump current. This is of fundamental interest for the dynamics of coupled lasers and their possible application

  6. Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation.

    Science.gov (United States)

    Wan, W J; Li, H; Zhou, T; Cao, J C

    2017-03-08

    Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification.

  7. Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers

    Science.gov (United States)

    Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

    2017-07-01

    We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

  8. The theoretical and numerical models of the novel and fast tunable semiconductor ring laser

    Science.gov (United States)

    Zhu, Jiangbo; Zhang, Junwen; Chi, Nan; Yu, Siyuan

    2011-01-01

    Fast wavelength-tunable semiconductor lasers will be the key components in future optical packet switching networks. Especially, they are of great importance in the optical network nodes: transmitters, optical wavelength-routers, etc. In this paper, a new scheme of a next-generation fast tunable ring laser was given. Tunable lasers in this design have better wavelength tunability compared with others, for they are switched faster in wavelength and simpler to control with the injecting light from an external distributed Bragg-reflector(DBR). Then some discussion of the waveguide material system and coupler design of the ring laser were given. And we also derived the multimode rate equations corresponding to this scheme by analyzing some characteristics of the semiconductor ring cavity, directionality, nonlinear mode competition, optical injection locking, etc. We did MatLab simulation based on the new rate equations to research the process of mode competition and wavelength switching in the laser, and achieved the basic functions of a tunable laser. Finally some discussion of the impact of several key parameters was given.

  9. Spin Relaxation in III-V Semiconductors in various systems: Contribution of Electron-Electron Interaction

    Science.gov (United States)

    Dogan, Fatih; Kesserwan, Hasan; Manchon, Aurelien

    2015-03-01

    In spintronics, most of the phenomena that we are interested happen at very fast time scales and are rich in structure in time domain. Our understanding, on the other hand, is mostly based on energy domain calculations. Many of the theoretical tools use approximations and simplifications that can be perceived as oversimplifications. We compare the structure, material, carrier density and temperature dependence of spin relaxation time in n-doped III-V semiconductors using Elliot-Yafet (EY) and D'yakanov-Perel'(DP) with real time analysis using kinetic spin Bloch equations (KSBE). The EY and DP theories fail to capture details as the system investigated is varied. KSBE, on the other hand, incorporates all relaxation sources as well as electron-electron interaction which modifies the spin relaxation time in a non-linear way. Since el-el interaction is very fast (~ fs) and spin-conserving, it is usually ignored in the analysis of spin relaxation. Our results indicate that electron-electron interaction cannot be neglected and its interplay with the other (spin and momentum) relaxation mechanisms (electron-impurity and electron-phonon scattering) dramatically alters the resulting spin dynamics. We use each interaction explicitly to investigate how, in the presence of others, each relaxation source behaves. We use GaAs and GaN for zinc-blend structure, and GaN and AlN for the wurtzite structure.

  10. Growth, structure and phase transitions of epitaxial nanowires of III-V semiconductors

    International Nuclear Information System (INIS)

    Glas, F; Patriarche, G; Harmand, J C

    2010-01-01

    We review and illustrate the impact of TEM on the study of nanowires of non-nitride III-V semiconductors, with particular emphasis on the understanding of the thermodynamics and kinetics of their formation assisted by nano-sized catalyst particles. Besides providing basic information about the morphology of the nanowires and their growth rate as a function of diameter, TEM offers insights into the peculiar crystalline structure that they adopt. We discuss the formation of the unusual wurtzite hexagonal crystalline phase and that of planar stacking defects in these nanowires and show that they are kinetically controlled. We also demonstrate the transformation of wurtzite into cubic sphalerite upon epitaxial burying of the nanowires. Nanowires are particularly interesting in that they allow the fabrication of precisely positioned quantum dots with well-defined geometries. In this respect, we discuss the formation of strained quantum-size inclusions in nanowires, their critical dimensions and the kinetic and thermodynamic factors governing the changes of the crystalline structure that sometimes occur around a hetero-interface.

  11. Fabrication of laser-target components by semiconductor technology

    International Nuclear Information System (INIS)

    Tindall, W.E.

    1979-01-01

    This paper describes the design and fabrication of a unique silicon substrate with which laser-target components can be mass produced. Different sizes and shapes of gold foils from 50 to 3000 microns in diameter and up to 25 microns thick have been produced with this process since 1976

  12. 1-W quasi-cw near-diffraction-limited semiconductor laser pumped optically by a fibre-coupled diode bar

    OpenAIRE

    Dhanjal, S.; Hoogland, S.; Roberts, J.S.; Hayward, R.A.; Clarkson, W.A.; Tropper, Anne

    2000-01-01

    We describe a diode-bar-pumped vertical-external-cavity surface-emitting semiconductor laser, which in quasi-cw operation emitted a peak power of >1 W at 1020 nm in a circular, near diffraction-limited beam.

  13. Ten years optically pumped semiconductor lasers: review, state-of-the-art, and future developments

    Science.gov (United States)

    Kannengiesser, Christian; Ostroumov, Vasiliy; Pfeufer, Volker; Seelert, Wolf; Simon, Christoph; von Elm, Rüdiger; Zuck, Andreas

    2010-02-01

    Optically Pumped Semiconductor Lasers - OPSLs - have been introduced in 2001. Their unique features such as power scalability and wavelength flexibility, their excellent beam parameters, power stability and reliability opened this pioneering technology access to a wide range of applications such as flow cytometry, confocal microscopy, sequencing, medical diagnosis and therapy, semiconductor inspection, graphic arts, forensic, metrology. This talk will introduce the OPSL principles and compare them with ion, diode and standard solid state lasers. It will revue the first 10 years of this exciting technology, its current state and trends. In particular currently accessible wavelengths and power ranges, frequency doubling, ultra-narrow linewidth possibilities will be discussed. A survey of key applications will be given.

  14. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    International Nuclear Information System (INIS)

    Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

    2014-01-01

    The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

  15. N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute

    International Nuclear Information System (INIS)

    Eliseev, P G

    2012-01-01

    A survey is presented of works on creation and investigation of semiconductor lasers during 1957 – 1977 at the P.N. Lebedev Physics Institute. Many of these works were initiated by N.G. Basov, starting from pre-laser time, when N.G. Basov and his coworkers formulated principal conditions of creation of lasers on interband transitions in semiconductors. Main directions of further works were diode lasers based on various materials and structures, their characteristics of output power, high-speed operation and reliability. (special issue devoted to the 90th anniversary of n.g. basov)

  16. Picosecond Laser Pulse Interactions with Metallic and Semiconductor Surfaces.

    Science.gov (United States)

    1984-11-01

    thermometric determination of plasma relaxation is by far more sensitive than direct optical measurements. The solid line in Fig. 4 shows the calculated...passively mode-locked Nd:yttrium aluminum garnet in Si, several researchers have used high picosecond or fem- laser was used to produce single 30-ps, 1.06...these targets to an aluminum backing plate with a silver-epoxy conducting glue (Ablestik). The conductivity of the targets was high enough to make

  17. Preparation of ZnS semiconductor nanocrystals using pulsed laser ablation in aqueous surfactant solutions

    International Nuclear Information System (INIS)

    Choi, S-H; Sasaki, T; Shimizu, Y; Yoon, J-W; Nichols, W T; Sung, Y-E; Koshizaki, N

    2007-01-01

    Cubic ZnS semiconductor nanocrystals with the size of 2 to 5 nm were prepared by pulsed laser ablation in aqueous surfactant solutions of sodium dodecyl sulfate and cetyltrimethylammonium bromide without any further treatments. The obtained suspensions of the nanocrystals have broad photoluminescence emission from 375 to 600 nm. The abundance and emission intensity of the nanocrystals depend on the concentration of the surfactant in solution

  18. Dynamics of modal power distribution in a multimode semiconductor laser with optical feedback

    International Nuclear Information System (INIS)

    Buldu, J M; Trull, J; Torrent, M C; GarcIa-Ojalvo, J; Mirasso, Claudio R

    2002-01-01

    The dynamics of power distribution between longitudinal modes of a multimode semiconductor laser subjected to external optical feedback is experimentally analysed in the low-frequency fluctuation regime. Power dropouts in the total light intensity are invariably accompanied by sudden activations of several longitudinal modes. These activations are seen not to be simultaneous to the dropouts, but to occur after them. The phenomenon is statistically analysed in a systematic way, and the corresponding delay is estimated. (letter to the editor)

  19. Dynamics of modal power distribution in a multimode semiconductor laser with optical feedback

    Energy Technology Data Exchange (ETDEWEB)

    Buldu, J M [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); Trull, J [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); Torrent, M C [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); GarcIa-Ojalvo, J [Departament de FIsica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Colom 11, E-08222 Terrassa (Spain); Mirasso, Claudio R [Departament de FIsica, Universitat de les Illes Balears, E-07071 Palma de Mallorca (Spain)

    2002-02-01

    The dynamics of power distribution between longitudinal modes of a multimode semiconductor laser subjected to external optical feedback is experimentally analysed in the low-frequency fluctuation regime. Power dropouts in the total light intensity are invariably accompanied by sudden activations of several longitudinal modes. These activations are seen not to be simultaneous to the dropouts, but to occur after them. The phenomenon is statistically analysed in a systematic way, and the corresponding delay is estimated. (letter to the editor)

  20. Semiconductor laser joint study program with Rome Laboratory

    Science.gov (United States)

    Schaff, William J.; Okeefe, Sean S.; Eastman, Lester F.

    1994-09-01

    A program to jointly study vertical-cavity surface emitting lasers (VCSEL) for high speed vertical optical interconnects (VOI) has been conducted under an ES&E between Rome Laboratory and Cornell University. Lasers were designed, grown, and fabricated at Cornell University. A VCSEL measurement laboratory has been designed, built, and utilized at Rome Laboratory. High quality VCSEL material was grown and characterized by fabricating conventional lateral cavity lasers that emitted at the design wavelength of 1.04 microns. The VCSEL's emit at 1.06 microns. Threshold currents of 16 mA at 4.8 volts were obtained for 30 microns diameter devices. Output powers of 5 mW were measured. This is 500 times higher power than from the light emitting diodes employed previously for vertical optical interconnects. A new form of compositional grading using a cosinusoidal function has been developed and is very successful for reducing diode series resistance for high speed interconnection applications. A flip-chip diamond package compatible with high speed operation of 16 VCSEL elements has been designed and characterized. A flip-chip device binding effort at Rome Laboratory was also designed and initiated. This report presents details of the one-year effort, including process recipes and results.

  1. Direct profiling of III/V semiconductor nanostructures at the atomic level by cross-sectional scanning tunneling microscopy

    OpenAIRE

    Bruls, D.M.

    2003-01-01

    By means of modern epitaxial growth techniques it is possible to fabricate semiconductor structures that are faster, cheaper and more complicated. They find their implementation in e.g. quantum dot or quantum well lasers. To obtain extra functionality, these devices have to be made so small, that within these structures charge carriers are confined in 2 or 3 dimensions. This results in discrete energy levels, which enable new applications and may solve several problems in the contemporary tec...

  2. Comprehensive experimental analysis of nonlinear dynamics in an optically-injected semiconductor laser

    Directory of Open Access Journals (Sweden)

    Kevin Schires

    2011-09-01

    Full Text Available We present the first comprehensive experimental study, to our knowledge, of the routes between nonlinear dynamics induced in a semiconductor laser under external optical injection based on an analysis of time-averaged measurements of the optical and RF spectra and phasors of real-time series of the laser output. The different means of analysis are compared for several types of routes and the benefits of each are discussed in terms of the identification and mapping of the nonlinear dynamics. Finally, the results are presented in a novel audio/video format that describes the evolution of the dynamics with the injection parameters.

  3. Electroluminescence Analysis by Tilt Polish Technique of InP-Based Semiconductor Lasers

    Science.gov (United States)

    Ichikawa, Hiroyuki; Sasaki, Kouichi; Hamada, Kotaro; Yamaguchi, Akira

    2010-03-01

    We developed an effective electroluminescence (EL) analysis method to specify the degraded region of InP-based semiconductor lasers. The EL analysis method is one of the most important methods for failure analysis. However, EL observation was difficult because opaque electrodes surround an active layer. A portion of each electrode had to be left intact for wiring to inject the current. Thus, we developed a partial polish technique for the bottom electrode. Tilt polish equipment with a rotating table was introduced; a flat polished surface and a sufficiently wide remaining portion of the bottom electrode were obtained. As a result, clear EL from the back surface of the laser was observed.

  4. Thermal crosstalk in arrays of III-N-based Lasers

    International Nuclear Information System (INIS)

    Kuc, Maciej; Sarzała, Robert P.; Nakwaski, Włodzimierz

    2013-01-01

    This paper presents a 3D comprehensive thermal-electrical self-consistent model of the continuous-wave (CW) operation of one-dimensional arrays of III-N-based laser diodes at room-temperature (RT). Their performance is mostly limited by thermal processes, in particular by thermal crosstalk between array emitters. Based on data collected from a range of secondary sources, the temperature dependence of the thermal and electrical conductivities of III-N materials used to manufacture nitride-based devices is shown to be a function of the thickness, aluminum mole fractions and Si- and Mg-doping levels of the nitride layers. The impact of substrate width and thickness on increasing the efficiency of heat-flux transport and reducing thermal crosstalk is investigated. As expected, the application of a top-mounted diamond heat spreader was found to have considerable influence on the thermal crosstalk between array emitters, enabling the RT CW operation of laser diode arrays with additional emitters

  5. Stability diagrams for continuous wide-range control of two mutually delay-coupled semiconductor lasers

    International Nuclear Information System (INIS)

    Junges, Leandro; Gallas, Jason A C

    2015-01-01

    The dynamics of two mutually delay-coupled semiconductor lasers has been frequently studied experimentally, numerically, and analytically either for weak or strong detuning between the lasers. Here, we present a systematic numerical investigation spanning all detuning ranges. We report high-resolution stability diagrams for wide ranges of the main control parameters of the laser, as described by the Lang–Kobayashi model. In particular, we detail the parameter influence on dynamical performance and map the distribution of chaotic pulsations and self-generated periodic spiking with arbitrary periodicity. Special attention is given to the unfolding of regular pulse packages for both symmetric and non-symmetric configurations with respect to detuning. The influence of the delay –time on the self-organization of periodic and chaotic laser phases as a function of the coupling and detuning is also described in detail. (paper)

  6. Gigahertz dual-comb modelocked diode-pumped semiconductor and solid-state lasers

    Science.gov (United States)

    Link, S. M.; Mangold, M.; Golling, M.; Klenner, A.; Keller, U.

    2016-03-01

    We present a simple approach to generate simultaneously two gigahertz mode-locked pulse trains from a single gain element. A bi-refringent crystal in the laser cavity splits the one cavity beam into two cross-polarized and spatially separated beams. This polarization-duplexing is successfully demonstrated for both a semiconductor disk laser (i.e. MIXSEL) and a diode-pumped solid-state Nd:YAG laser. The beat between the two beams results in a microwave frequency comb, which represents a direct link between the terahertz optical frequencies and the electronically accessible microwave regime. This dual-output technique enables compact and cost-efficient dual-comb lasers for spectroscopy applications.

  7. Near infrared laser stimulation of human neural stem cells into neurons on graphene nanomesh semiconductors.

    Science.gov (United States)

    Akhavan, Omid; Ghaderi, Elham; Shirazian, Soheil A

    2015-02-01

    Reduced graphene oxide nanomeshes (rGONMs), as p-type semiconductors with band-gap energy of ∼ 1 eV, were developed and applied in near infrared (NIR) laser stimulation of human neural stem cells (hNSCs) into neurons. The biocompatibility of the rGONMs in growth of hNSCs was found similar to that of the graphene oxide (GO) sheets. Proliferation of the hNSCs on the GONMs was assigned to the excess oxygen functional groups formed on edge defects of the GONMs, resulting in superhydrophilicity of the surface. Under NIR laser stimulation, the graphene layers (especially the rGONMs) exhibited significant cell differentiations, including more elongations of the cells and higher differentiation of neurons than glia. The higher hNSC differentiation on the rGONM than the reduced GO (rGO) was assigned to the stimulation effects of the low-energy photoexcited electrons injected from the rGONM semiconductors into the cells, while the high-energy photoelectrons of the rGO (as a zero band-gap semiconductor) could suppress the cell proliferation and/or even cause cell damages. Using conventional heating of the culture media up to ∼ 43 °C (the temperature typically reached under the laser irradiation), no significant differentiation was observed in dark. This further confirmed the role of photoelectrons in the hNSC differentiation. Copyright © 2014 Elsevier B.V. All rights reserved.

  8. Dynamics of InGaN tandem blue-violet semiconductor lasers

    International Nuclear Information System (INIS)

    Antohi, I.; Rusu, S.S.; Tronciu, V.Z.

    2013-01-01

    Full text: Blue-violet semiconductor lasers have received much attention because of their promise for high-density optical storage applications. In particular, blue-violet laser diodes operating at 400 nm are required for BD- systems and for use in medicine, biology, color printers and monitors, etc, In recent years, numerous fabrication methods have been proposed and developed for blue lasers with CW and self-pulsating operations and the lifetime of such lasers has been increased to over 15000 h. Recently, we have reported self-pulsation and excitable behaviour for an InGaN laser with a p-type saturable absorber, and SP in the frequency range from 1.6 to 2.9 GHz has been achieved with such lasers. In this paper, we present an investigation of the dynamics of tandem 400 nm blue-violet lasers with setup presented in Fig.1a. A particular feature of the devices is the connection of the contacts of the SA, to reduce the carrier lifetime in the SA with the intention of producing self-pulsation and excitability. We examine the laser dynamics in terms of bifurcation diagrams. A typical calculation of bifurcation for the periodic solution is shown in Fig. 1b. This figure shows the dependence of the peak of the photon number on the injected.

  9. Metabolomic and proteomic biomarkers for III-V semiconductors: Chemical-specific porphyrinurias and proteinurias

    International Nuclear Information System (INIS)

    Fowler, Bruce A.; Conner, Elizabeth A.; Yamauchi, Hiroshi

    2005-01-01

    A pressing need exists to develop and validate molecular biomarkers to assess the early effects of chemical agents, both individually and in mixtures. This is particularly true for new and chemically intensive industries such as the semiconductor industry. Previous studies from this laboratory and others have demonstrated element-specific alterations of the heme biosynthetic pathway for the III-V semiconductors gallium arsenide (GaAs) and indium arsenide (InAs) with attendant increased urinary excretion of specific heme precursors. These data represent an example of a metabolomic biomarker to assess chemical effects early, before clinical disease develops. Previous studies have demonstrated that the intratracheal or subcutaneous administration of GaAs and InAs particles to hamsters produces the induction of the major stress protein gene families in renal proximal tubule cells. This was monitored by 35-S methionine labeling of gene products followed by two-dimensional gel electrophoresis after exposure to InAs particles. The present studies examined whether these effects were associated with the development of compound-specific proteinuria after 10 or 30 days following subcutaneous injection of GaAs or InAs particles in hamsters. The results of these studies demonstrated the development of GaAs- and InAs-specific alterations in renal tubule cell protein expression patterns that varied at 10 and 30 days. At the 30-day point, cells in hamsters that received InAs particles showed marked attenuation of protein expression, suggesting inhibition of the stress protein response. These changes were associated with GaAs and InAs proteinuria patterns as monitored by two-dimensional gel electrophoresis and silver staining. The intensity of the protein excretion patterns increased between the 10- and 30-day points and was most pronounced for animals in the 30-day InAs treatment group. No overt morphologic signs of cell death were seen in renal tubule cells of these animals

  10. Hybrid III-V-on-Si Vertical Cavity laser for Optical Interconnects

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Semenova, Elizaveta; Chung, Il-Sug

    2013-01-01

    Combining a III-V active material onto the Si platform is an attractive approach for silicon photonics light source. We have developed fabrication methods for novel III-V on Si vertical cavity lasers.......Combining a III-V active material onto the Si platform is an attractive approach for silicon photonics light source. We have developed fabrication methods for novel III-V on Si vertical cavity lasers....

  11. Interface formation between hydrocarbon ring molecules and III-V semiconductor surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Passmann, Regina

    2008-08-15

    In this work a systematical study to investigate the adsorption structures of small hydrocarbon ring shaped molecules on III-V semiconductor surfaces with Photo-Emission Spectroscopy (PES), Reflectance Anisotropy Spectroscopy (RAS), Scanning Tunneling Microscopy (STM) as well as Low Electron Energy Diffraction (LEED) was performed. To investigate the influence of the surface structure in detail the surface dimer configuration to the adsorption process of organic molecules GaAs(001) surfaces, the c(4 x 4), the (2 x 4) and the (4 x 2) have been investigated as well as the adsorption of cyclopentene on the InP(001)(2 x 4) reconstructed surface. In the direct comparison it is shown that cyclopentene bonds to the InP(001)(2 x 4) surface via a cycloaddition like reaction. During this adsorption the double bond splits which is in contrast to the adsorption of cyclopentene on the GaAs(001) surfaces. Therefrom it is concluded that the surface geometry has an influence on the resulting adsorption structure. In order to investigate the influence of the intra-molecular double bonds, cyclopentene (one double bond), 1,4-cyclohexadiene (two double bonds) and benzene (three double bonds) were used for the characterization of the interface formation. With the investigations on the GaAs(001) reconstructed surfaces it was shown that a dependency of the bonding configuration on the intra-molecular double bonds exists. During the adsorption of cyclopentene no evidence was found that the double bond has to be involved in the interface formation while during the adsorption of 1,4-cyclohexadiene and benzene the double bonds are involved. Furthermore it was found that a bonding to As atoms of the surface is more likely than a bonding to Ga atoms. (orig.)

  12. Interface formation between hydrocarbon ring molecules and III-V semiconductor surfaces

    International Nuclear Information System (INIS)

    Passmann, Regina

    2008-01-01

    In this work a systematical study to investigate the adsorption structures of small hydrocarbon ring shaped molecules on III-V semiconductor surfaces with Photo-Emission Spectroscopy (PES), Reflectance Anisotropy Spectroscopy (RAS), Scanning Tunneling Microscopy (STM) as well as Low Electron Energy Diffraction (LEED) was performed. To investigate the influence of the surface structure in detail the surface dimer configuration to the adsorption process of organic molecules GaAs(001) surfaces, the c(4 x 4), the (2 x 4) and the (4 x 2) have been investigated as well as the adsorption of cyclopentene on the InP(001)(2 x 4) reconstructed surface. In the direct comparison it is shown that cyclopentene bonds to the InP(001)(2 x 4) surface via a cycloaddition like reaction. During this adsorption the double bond splits which is in contrast to the adsorption of cyclopentene on the GaAs(001) surfaces. Therefrom it is concluded that the surface geometry has an influence on the resulting adsorption structure. In order to investigate the influence of the intra-molecular double bonds, cyclopentene (one double bond), 1,4-cyclohexadiene (two double bonds) and benzene (three double bonds) were used for the characterization of the interface formation. With the investigations on the GaAs(001) reconstructed surfaces it was shown that a dependency of the bonding configuration on the intra-molecular double bonds exists. During the adsorption of cyclopentene no evidence was found that the double bond has to be involved in the interface formation while during the adsorption of 1,4-cyclohexadiene and benzene the double bonds are involved. Furthermore it was found that a bonding to As atoms of the surface is more likely than a bonding to Ga atoms. (orig.)

  13. Dilute ferromagnetic semiconductors prepared by the combination of ion implantation with pulse laser melting

    International Nuclear Information System (INIS)

    Zhou, Shengqiang

    2015-01-01

    Combining semiconducting and ferromagnetic properties, dilute ferromagnetic semiconductors (DFS) have been under intensive investigation for more than two decades. Mn doped III–V compound semiconductors have been regarded as the prototype of DFS from both experimental and theoretic investigations. The magnetic properties of III–V:Mn can be controlled by manipulating free carriers via electrical gating, as for controlling the electrical properties in conventional semiconductors. However, the preparation of DFS presents a big challenge due to the low solubility of Mn in semiconductors. Ion implantation followed by pulsed laser melting (II-PLM) provides an alternative to the widely used low-temperature molecular beam epitaxy (LT-MBE) approach. Both ion implantation and pulsed-laser melting occur far enough from thermodynamic equilibrium conditions. Ion implantation introduces enough dopants and the subsequent laser pulse deposit energy in the near-surface region to drive a rapid liquid-phase epitaxial growth. Here, we review the experimental study on preparation of III–V:Mn using II-PLM. We start with a brief description about the development of DFS and the physics behind II-PLM. Then we show that ferromagnetic GaMnAs and InMnAs films can be prepared by II-PLM and they show the same characteristics of LT-MBE grown samples. Going beyond LT-MBE, II-PLM is successful to bring two new members, GaMnP and InMnP, into the family of III–V:Mn DFS. Both GaMnP and InMnP films show the signature of DFS and an insulating behavior. At the end, we summarize the work done for Ge:Mn and Si:Mn using II-PLM and present suggestions for future investigations. The remarkable advantage of II-PLM approach is its versatility. In general, II-PLM can be utilized to prepare supersaturated alloys with mismatched components. (topical review)

  14. Micromachining of semiconductor by femtosecond laser for integrated circuit defect analysis

    International Nuclear Information System (INIS)

    Halbwax, M.; Sarnet, T.; Hermann, J.; Delaporte, Ph.; Sentis, M.; Fares, L.; Haller, G.

    2007-01-01

    The latest International Technology Roadmap for Semiconductors (ITRS) has highlighted the detection and analysis of defects in Integrated Circuits (IC) as a major challenge faced by the semiconductor industry. Advanced tools used today for defect cross sectioning include dual beams (focused ion- and electron-beam technologies) with resolution down to the sub-Angstrom level. However ion milling an IC with a FIB is time consuming because of the need to open wide cavities in front of the cross-sections that need to be analyzed. Therefore the use of a femtosecond laser as a tool for direct material removal is discussed in this paper. Experiments were performed on IC structures to reveal the different layers of fabrication: selective or total ablation can occur depending on the laser energy density, without delamination of the layers. Different laser irradiation conditions like pressure (air, vacuum), polarization, beam shaping, and scanning parameters have been used to produce different types of cavities. The femtosecond laser engraving of silicon-based structures could be useful for cross-sectioning devices but also for other applications like direct-write lithography, photomask repair, maskless implantation or reverse engineering/restructuring

  15. Micromachining of semiconductor by femtosecond laser for integrated circuit defect analysis

    Energy Technology Data Exchange (ETDEWEB)

    Halbwax, M. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France); Sarnet, T. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France)], E-mail: sarnet@lp3.univ-mrs.fr; Hermann, J.; Delaporte, Ph.; Sentis, M. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France); Fares, L.; Haller, G. [STMicroelectronics, 190 Avenue Celestin Coq, ZI, 13106 Rousset Cedex (France)

    2007-12-15

    The latest International Technology Roadmap for Semiconductors (ITRS) has highlighted the detection and analysis of defects in Integrated Circuits (IC) as a major challenge faced by the semiconductor industry. Advanced tools used today for defect cross sectioning include dual beams (focused ion- and electron-beam technologies) with resolution down to the sub-Angstrom level. However ion milling an IC with a FIB is time consuming because of the need to open wide cavities in front of the cross-sections that need to be analyzed. Therefore the use of a femtosecond laser as a tool for direct material removal is discussed in this paper. Experiments were performed on IC structures to reveal the different layers of fabrication: selective or total ablation can occur depending on the laser energy density, without delamination of the layers. Different laser irradiation conditions like pressure (air, vacuum), polarization, beam shaping, and scanning parameters have been used to produce different types of cavities. The femtosecond laser engraving of silicon-based structures could be useful for cross-sectioning devices but also for other applications like direct-write lithography, photomask repair, maskless implantation or reverse engineering/restructuring.

  16. Laser photo-reflectance characterization of resonant nonlinear electro-refraction in thin semiconductor films

    International Nuclear Information System (INIS)

    Chism, Will; Cartwright, Jason

    2012-01-01

    Photo-reflectance (PR) measurements provide a non-contact means for the precise characterization of semiconductor electronic properties. In this paper, we investigate the use of a laser beam as the probe beam in the PR setup. In this case it is seen that the nonlinear refraction is responsible for the amplitude change of the reflected probe field, whereas the phase change is due to nonlinear absorption. The open aperture condition may then be used to eliminate the spatial phase at the detector, thereby isolating the electro-refractive contribution to the PR signal. This greatly simplifies the PR analysis and allows absolute measurements of electro-refraction in thin semiconductor films. We report the application of the laser PR technique to characterize physical strain in thin silicon on silicon-germanium films. - Highlights: ► We describe the theory of laser photoreflectance. ► Laser photoreflectance is used to independently characterize nonlinear refraction. ► We report the characterization of strain in thin strained silicon films.

  17. Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

    International Nuclear Information System (INIS)

    Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.

    1994-01-01

    The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL's). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL's which are appropriate for material processing applications, low and intermediate average power DPSSL's are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications

  18. Semiconductor optical amplifier-based heterodyning detection for resolving optical terahertz beat-tone signals from passively mode-locked semiconductor lasers

    International Nuclear Information System (INIS)

    Latkowski, Sylwester; Maldonado-Basilio, Ramon; Carney, Kevin; Parra-Cetina, Josue; Philippe, Severine; Landais, Pascal

    2010-01-01

    An all-optical heterodyne approach based on a room-temperature controlled semiconductor optical amplifier (SOA) for measuring the frequency and linewidth of the terahertz beat-tone signal from a passively mode-locked laser is proposed. Under the injection of two external cavity lasers, the SOA acts as a local oscillator at their detuning frequency and also as an optical frequency mixer whose inputs are the self-modulated spectrum of the device under test and the two laser beams. Frequency and linewidth of the intermediate frequency signal (and therefore, the beat-tone signal) are resolved by using a photodiode and an electrical spectrum analyzer.

  19. Frequency response control of semiconductor laser by using hybrid modulation scheme.

    Science.gov (United States)

    Mieda, Shigeru; Yokota, Nobuhide; Isshiki, Ryuto; Kobayashi, Wataru; Yasaka, Hiroshi

    2016-10-31

    A hybrid modulation scheme that simultaneously applies the direct current modulation and intra-cavity loss modulation to a semiconductor laser is proposed. Both numerical calculations using rate equations and experiments using a fabricated laser show that the hybrid modulation scheme can control the frequency response of the laser by changing a modulation ratio and time delay between the two modulations. The modulation ratio and time delay provide the degree of signal mixing of the two modulations and an optimum condition is found when a non-flat frequency response for the intra-cavity loss modulation is compensated by that for the direct current modulation. We experimentally confirm a 8.64-dB improvement of the modulation sensitivity at 20 GHz compared with the pure direct current modulation with a 0.7-dB relaxation oscillation peak.

  20. High-order diffraction gratings for high-power semiconductor lasers

    International Nuclear Information System (INIS)

    Vasil’eva, V. V.; Vinokurov, D. A.; Zolotarev, V. V.; Leshko, A. Yu.; Petrunov, A. N.; Pikhtin, N. A.; Rastegaeva, M. G.; Sokolova, Z. N.; Shashkin, I. S.; Tarasov, I. S.

    2012-01-01

    A deep diffraction grating with a large period (∼2 μm) within one of the cladding layers is proposed for the implementation of selective feedback in a semiconductor laser. Frequency dependences of reflectance in the 12th diffraction order for rectangular, triangular, and trapezoidal diffraction gratings are calculated. It is shown that the maximum reflectance of the waveguide mode is attained using a rectangular or trapezoidal grating ∼2 μm deep in the laser structure. Deep trapezoidal diffraction gratings with large periods are fabricated in the Al 0.3 Ga 0.7 As cladding layer of a GaAs/AlGaAs laser structure using photolithography and reactive ion etching.

  1. Optical-feedback semiconductor laser Michelson interferometer for displacement measurements with directional discrimination

    International Nuclear Information System (INIS)

    Rodrigo, Peter John; Lim, May; Saloma, Caesar

    2001-01-01

    An optical-feedback semiconductor laser Michelson interferometer (OSMI) is presented for measuring microscopic linear displacements without ambiguity in the direction of motion. The two waves from the interferometer arms, one from the reference mirror and the other from the reflecting moving target, are fed back into the lasing medium (λ=830 nm), causing variations in the laser output power. We model the OSMI into an equivalent Fabry-Perot resonator and derive the dependence of the output power (and the junction voltage) on the path difference between the two interferometer arms. Numerical and experimental results consistently show that the laser output power varies periodically (period, λ/2) with path difference. The output power variation exhibits an asymmetric behavior with the direction of motion, which is used to measure, at subwavelength resolution, the displacement vector (both amplitude and direction) of the moving sample. Two samples are considered in the experiments: (i) a piezoelectric transducer and (ii) an audio speaker

  2. TE-TM dynamics in a semiconductor laser subject to polarization-rotated optical feedback

    International Nuclear Information System (INIS)

    Heil, T.; Uchida, A.; Davis, P.; Aida, T.

    2003-01-01

    We present a comprehensive experimental characterization of the dynamics of semiconductor lasers subject to polarization-rotated optical feedback. We find oscillatory instabilities appearing for large feedback levels and disappearing at large injection currents, which we classify in contrast to the well-known conventional optical-feedback-induced dynamics. In addition, we compare our experiments to theoretical results of a single-mode model assuming incoherence of the optical feedback, and we identify differences concerning the average power of the laser. Hence, we develop an alternative model accounting for both polarizations, where the emission of the dominant TE mode is injected with delay into the TM mode of the laser. Numerical simulations using this model show good qualitative agreement with our experimental results, correctly reproducing the parameter dependences of the dynamics. Finally, we discuss the application of polarization-rotated-feedback induced instabilities in chaotic carrier communication systems

  3. Implications of the Differential Toxicological Effects of III-V Ionic and Particulate Materials for Hazard Assessment of Semiconductor Slurries.

    Science.gov (United States)

    Jiang, Wen; Lin, Sijie; Chang, Chong Hyun; Ji, Zhaoxia; Sun, Bingbing; Wang, Xiang; Li, Ruibin; Pon, Nanetta; Xia, Tian; Nel, André E

    2015-12-22

    Because of tunable band gaps, high carrier mobility, and low-energy consumption rates, III-V materials are attractive for use in semiconductor wafers. However, these wafers require chemical mechanical planarization (CMP) for polishing, which leads to the generation of large quantities of hazardous waste including particulate and ionic III-V debris. Although the toxic effects of micron-sized III-V materials have been studied in vivo, no comprehensive assessment has been undertaken to elucidate the hazardous effects of submicron particulates and released III-V ionic components. Since III-V materials may contribute disproportionately to the hazard of CMP slurries, we obtained GaP, InP, GaAs, and InAs as micron- (0.2-3 μm) and nanoscale (particles for comparative studies of their cytotoxic potential in macrophage (THP-1) and lung epithelial (BEAS-2B) cell lines. We found that nanosized III-V arsenides, including GaAs and InAs, could induce significantly more cytotoxicity over a 24-72 h observation period. In contrast, GaP and InP particulates of all sizes as well as ionic GaCl3 and InCl3 were substantially less hazardous. The principal mechanism of III-V arsenide nanoparticle toxicity is dissolution and shedding of toxic As(III) and, to a lesser extent, As(V) ions. GaAs dissolves in the cell culture medium as well as in acidifying intracellular compartments, while InAs dissolves (more slowly) inside cells. Chelation of released As by 2,3-dimercapto-1-propanesulfonic acid interfered in GaAs toxicity. Collectively, these results demonstrate that III-V arsenides, GaAs and InAs nanoparticles, contribute in a major way to the toxicity of III-V materials that could appear in slurries. This finding is of importance for considering how to deal with the hazard potential of CMP slurries.

  4. Conversion from non-orthogonally to orthogonally polarized optical single-sideband modulation using optically injected semiconductor lasers.

    Science.gov (United States)

    Hung, Yu-Han; Tseng, Chin-Hao; Hwang, Sheng-Kwang

    2018-06-01

    This Letter investigates an optically injected semiconductor laser for conversion from non-orthogonally to orthogonally polarized optical single-sideband modulation. The underlying mechanism relies solely on nonlinear laser characteristics and, thus, only a typical semiconductor laser is required as the key conversion unit. This conversion can be achieved for a broadly tunable frequency range up to at least 65 GHz. After conversion, the microwave phase quality, including linewidth and phase noise, is mostly preserved, and simultaneous microwave amplification up to 23 dB is feasible.

  5. Observation of modulation speed enhancement, frequency modulation suppression, and phase noise reduction by detuned loading in a coupled-cavity semiconductor laser

    OpenAIRE

    Vahala, Kerry; Paslaski, Joel; Yariv, Amnon

    1985-01-01

    Simultaneous direct modulation response enhancement, phase noise (linewidth) reduction, and frequency modulation suppression are produced in a coupled-cavity semiconductor laser by the detuned loading mechanism.

  6. Stimulated Brillouin scattering of laser in semiconductor plasma embedded with nano-sized grains

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Giriraj, E-mail: grsharma@gmail.com [SRJ Government Girls’ College, Neemuch (M P) (India); Dad, R. C. [Government P G College, Mandsaur (M P) (India); Ghosh, S. [School of Studies in Physics, Vikram University, Ujjain, (M P) (India)

    2015-07-31

    A high power laser propagating through semiconductor plasma undergoes Stimulated Brillouin scattering (SBS) from the electrostrictively generated acoustic perturbations. We have considered that nano-sized grains (NSGs) ions are embedded in semiconductor plasma by means of ion implantation. The NSGs are bombarded by the surrounding plasma particles and collect electrons. By considering a negative charge on the NSGs, we present an analytically study on the effects of NSGs on threshold field for the onset of SBS and Brillouin gain of generated Brillouin scattered mode. It is found that as the charge on the NSGs builds up, the Brillouin gain is significantly raised and the threshold pump field for the onset of SBS process is lowered.

  7. Multipulse dynamics of a passively mode-locked semiconductor laser with delayed optical feedback

    Science.gov (United States)

    Jaurigue, Lina; Krauskopf, Bernd; Lüdge, Kathy

    2017-11-01

    Passively mode-locked semiconductor lasers are compact, inexpensive sources of short light pulses of high repetition rates. In this work, we investigate the dynamics and bifurcations arising in such a device under the influence of time delayed optical feedback. This laser system is modelled by a system of delay differential equations, which includes delay terms associated with the laser cavity and feedback loop. We make use of specialised path continuation software for delay differential equations to analyse the regime of short feedback delays. Specifically, we consider how the dynamics and bifurcations depend on the pump current of the laser, the feedback strength, and the feedback delay time. We show that an important role is played by resonances between the mode-locking frequencies and the feedback delay time. We find feedback-induced harmonic mode locking and show that a mismatch between the fundamental frequency of the laser and that of the feedback cavity can lead to multi-pulse or quasiperiodic dynamics. The quasiperiodic dynamics exhibit a slow modulation, on the time scale of the gain recovery rate, which results from a beating with the frequency introduced in the associated torus bifurcations and leads to gain competition between multiple pulse trains within the laser cavity. Our results also have implications for the case of large feedback delay times, where a complete bifurcation analysis is not practical. Namely, for increasing delay, there is an ever-increasing degree of multistability between mode-locked solutions due to the frequency pulling effect.

  8. Optoelectronic integrated circuits utilising vertical-cavity surface-emitting semiconductor lasers

    International Nuclear Information System (INIS)

    Zakharov, S D; Fyodorov, V B; Tsvetkov, V V

    1999-01-01

    Optoelectronic integrated circuits with additional optical inputs/outputs, in which vertical-cavity surface-emitting (VCSE) lasers perform the data transfer functions, are considered. The mutual relationship and the 'affinity' between optical means for data transfer and processing, on the one hand, and the traditional electronic component base, on the other, are demonstrated in the case of implementation of three-dimensional interconnects with a high transmission capacity. Attention is drawn to the problems encountered when semiconductor injection lasers are used in communication lines. It is shown what role can be played by VCSE lasers in solving these problems. A detailed analysis is made of the topics relating to possible structural and technological solutions in the fabrication of single lasers and of their arrays, and also of the problems hindering integrating of lasers into emitter arrays. Considerable attention is given to integrated circuits with optoelectronic smart pixels. Various technological methods for vertical integration of GaAs VCSE lasers with the silicon substrate of a microcircuit (chip) are discussed. (review)

  9. Infrared magneto-optical properties of (III, Mn)V ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Sinova, J.; Jungwirth, Tomáš; Kučera, Jan; MacDonald, A. H.

    2003-01-01

    Roč. 67, č. 23 (2003), s. 235203-1 - 235203-11 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * diluted magnetic semiconductors * magneto-optical properties ac-Hall conductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

  10. Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

    Energy Technology Data Exchange (ETDEWEB)

    Bakry, A. [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia); Abdulrhmann, S. [Jazan University, 114, Department of Physics, Faculty of Sciences (Saudi Arabia); Ahmed, M., E-mail: mostafa.farghal@mu.edu.eg [King Abdulaziz University, 80203, Department of Physics, Faculty of Science (Saudi Arabia)

    2016-06-15

    We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding the second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.

  11. Ring-shaped active mode-locked tunable laser using quantum-dot semiconductor optical amplifier

    Science.gov (United States)

    Zhang, Mingxiao; Wang, Yongjun; Liu, Xinyu

    2018-03-01

    In this paper, a lot of simulations has been done for ring-shaped active mode-locked lasers with quantum-dot semiconductor optical amplifier (QD-SOA). Based on the simulation model of QD-SOA, we discussed about the influence towards mode-locked waveform frequency and pulse caused by QD-SOA maximum mode peak gain, active layer loss coefficient, bias current, incident light pulse, fiber nonlinear coefficient. In the meantime, we also take the tunable performance of the laser into consideration. Results showed QD-SOA a better performance than original semiconductor optical amplifier (SOA) in recovery time, line width, and nonlinear coefficients, which makes it possible to output a locked-mode impulse that has a higher impulse power, narrower impulse width as well as the phase is more easily controlled. After a lot of simulations, this laser can realize a 20GHz better locked-mode output pulse after 200 loops, where the power is above 17.5mW, impulse width is less than 2.7ps, moreover, the tunable wavelength range is between 1540nm-1580nm.

  12. Packaged semiconductor laser optical phase locked loop for photonic generation, processing and transmission of microwave signals

    DEFF Research Database (Denmark)

    Langley, L.N.; Elkin, M.D.; Edege, C.

    1999-01-01

    In this paper, we present the first fully packaged semiconductor laser optical phase-locked loop (OPLL) microwave photonic transmitter. The transmitter is based on semiconductor lasers that are directly phase locked without the use of any other phase noise-reduction mechanisms. In this transmitter......, the lasers have a free-running summed linewidth of 6 MHz and the OPLL has a feedback bandwidth of 70 MHz, A state-of-the-art performance is obtained, with a total phase-error variance of 0.05 rad(2) (1-GHz bandwidth) and a carrier phase-error variance of 7x10(-4) rad(2) in a 15-MHz bandwidth. Carriers...... are generated in the range of 7-14 GHz. The OPLL transmitter has been fully packaged for practical use in field trials. This is the first time this type of transmitter has been fabricated in a packaged state which is a significant advance on the route to practical application....

  13. An ultrahigh vacuum, low-energy ion-assisted deposition system for III-V semiconductor film growth

    Science.gov (United States)

    Rohde, S.; Barnett, S. A.; Choi, C.-H.

    1989-06-01

    A novel ion-assisted deposition system is described in which the substrate and growing film can be bombarded with high current densities (greater than 1 mA/sq cm) of very low energy (10-200 eV) ions. The system design philosophy is similar to that used in III-V semiconductor molecular-beam epitaxy systems: the chamber is an all-metal ultrahigh vacuum system with liquid-nitrogen-cooled shrouds, Knudsen-cell evaporation sources, a sample insertion load-lock, and a 30-kV reflection high-energy electron diffraction system. III-V semiconductor film growth is achieved using evaporated group-V fluxes and group-III elemental fluxes sputtered from high-purity targets using ions extracted from a triode glow discharge. Using an In target and an As effusion cell, InAs deposition rates R of 2 microns/h have been obtained. Epitaxial growth of InAs was observed on both GaSb(100) and Si(100) substrates.

  14. Effect of Suyuping combined with semiconductor laser irradiation on wound healing after anal fistula surgery

    Institute of Scientific and Technical Information of China (English)

    Min Zhao; Chang-Ye Sang; Zhen-Jun Wang; Yan-Chun Xu

    2016-01-01

    Objective:To explore the effect of Suyuping combined with semiconductor laser irradiation on the wound healing after anal fistula surgery.Methods:A total of 180 patients with anal fistula who were admitted in our hospital from October, 2013 to May, 2015 for surgery were included in the study and randomized into the treatment group and the control group with 90 cases in each group. The patients in the control group were given the conventional surgical debridement dressing, a time a day. On this basis, the patients in the treatment group were given Suyuping smearing on the wound sinus tract combined with semiconductor laser irradiation, a time a day for 10 min, continuous irradiation until wound healing. The postoperative wound swelling fading, wound surface secretion amount, and the clinical efficacy in the two groups were recorded.Results:The wound surface swelling degree and wound pain degree at each timing point after operation in the treatment group were significantly lower than those in the control group (P<0.05). The wound surface area at each timing point after operation in the treatment group was significantly lower than that in the control group (P<0.05). The wound surface secretion amount 6, 9, and 12 days after operation in the treatment group was significantly lower than that in the control group (P<0.05). The total effective rate in the treatment group was significantly higher than that in the control group (P<0.05). The average healing time in the treatment group was significantly faster than that in the control group (P<0.05). Conclusions: Suyuping combined with semiconductor laser irradiation in the treatment of patients after anal fistula can effectively improve the local blood and lymphatic circulation of wound surface, promote the growth of granulation tissues, and contribute the wound healing.

  15. Effect of Suyuping combined with semiconductor laser irradiation on wound healing after anal fistula surgery

    Directory of Open Access Journals (Sweden)

    Min Zhao

    2016-06-01

    Full Text Available Objective: To explore the effect of Suyuping combined with semiconductor laser irradiation on the wound healing after anal fistula surgery. Methods: A total of 180 patients with anal fistula who were admitted in our hospital from October, 2013 to May, 2015 for surgery were included in the study and randomized into the treatment group and the control group with 90 cases in each group. The patients in the control group were given the conventional surgical debridement dressing, a time a day. On this basis, the patients in the treatment group were given Suyuping smearing on the wound sinus tract combined with semiconductor laser irradiation, a time a day for 10 min, continuous irradiation until wound healing. The postoperative wound swelling fading, wound surface secretion amount, and the clinical efficacy in the two groups were recorded. Results: The wound surface swelling degree and wound pain degree at each timing point after operation in the treatment group were significantly lower than those in the control group (P<0.05. The wound surface area at each timing point after operation in the treatment group was significantly lower than that in the control group (P<0.05. The wound surface secretion amount 6, 9, and 12 days after operation in the treatment group was significantly lower than that in the control group (P<0.05. The total effective rate in the treatment group was significantly higher than that in the control group (P<0.05. The average healing time in the treatment group was significantly faster than that in the control group (P<0.05. Conclusions: Suyuping combined with semiconductor laser irradiation in the treatment of patients after anal fistula can effectively improve the local blood and lymphatic circulation of wound surface, promote the growth of granulation tissues, and contribute the wound healing.

  16. Crisis route to chaos in semiconductor lasers subjected to external optical feedback

    Science.gov (United States)

    Wishon, Michael J.; Locquet, Alexandre; Chang, C. Y.; Choi, D.; Citrin, D. S.

    2018-03-01

    Semiconductor lasers subjected to optical feedback have been intensively used as archetypical testbeds for high-speed (sub-ns) and high-dimensional nonlinear dynamics. By simultaneously extracting all the dynamical variables, we demonstrate that for larger current, the commonly named "quasiperiodic" route is in fact based on mixed external-cavity solutions that lock the oscillation frequency of the intensity, voltage, and separation in optical frequency through a mechanism involving successive rejections along the unstable manifold of an antimode. We show that chaos emerges from a crisis resulting from the inability to maintain locking as the unstable manifold becomes inaccessible.

  17. Field performance of an all-semiconductor laser coherent Doppler lidar

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Pedersen, Christian

    2012-01-01

    We implement and test what, to our knowledge, is the first deployable coherent Doppler lidar (CDL) system based on a compact, inexpensive all-semiconductor laser (SL). To demonstrate the field performance of our SL-CDL remote sensor, we compare a 36 h time series of averaged radial wind speeds...... measured by our instrument at an 80 m distance to those simultaneously obtained from an industry-standard sonic anemometer (SA). An excellent degree of correlation (R2=0.994 and slope=0.996) is achieved from a linear regression analysis of the CDL versus SA wind speed data. The lidar system is capable...

  18. Analysis of timing jitter in external-cavity mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper

    2006-01-01

    We develop a comprehensive theoretical description of passive mode-locking in external-cavity mode-locked semiconductor lasers based on a fully distributed time-domain approach. The model accounts for the dispersion of both gain and refractive index, nonlinear gain saturation from ultrafast...... processes, self-phase modulation, and spontaneous emission noise. Fluctuations of the mode-locked pulses are characterized from the fully distributed model using direct integration of noise-skirts in the phase-noise spectrum and the soliton perturbations introduced by Haus. We implement the model in order...

  19. Low-frequency fluctuation in multimode semiconductor laser subject to optical feedback

    Institute of Scientific and Technical Information of China (English)

    Xu Zhang; Huiying Ye; Zhaoxin Song

    2008-01-01

    Dynamics of a semiconductor laser subject to moderate optical feedback operating in the low-frequency fluctuation regime is numerically investigated.Multimode Lang-Kobayashi(LK)equations show that the low-frequency intensity dropout including the total intensity and sub-modes intensity is accompanied by sudden dropout simultaneously,which is in good agreement with experimental observation.The power fluctuation is quite annoying in practical applications,therefore it becomes important to study the mechanism of power fluctuation.It is also shown that many factors,such as spontaneous emission noise and feedback parameter,may influence power fluctuation larger than previously expected.

  20. Multi-user bidirectional communication using isochronal synchronisation of array of chaotic directly modulated semiconductor lasers

    International Nuclear Information System (INIS)

    Krishna, Bindu M.; John, Manu P.; Nandakumaran, V.M.

    2010-01-01

    Isochronal synchronisation between the elements of an array of three mutually coupled directly modulated semiconductor lasers is utilized for the purpose of simultaneous bidirectional secure communication. Chaotic synchronisation is achieved by adding the coupling signal to the self feedback signal provided to each element of the array. A symmetric coupling is effective in inducing synchronisation between the elements of the array. This coupling scheme provides a direct link between every pair of elements thus making the method suitable for simultaneous bidirectional communication between them. Both analog and digital messages are successfully encrypted and decrypted simultaneously by each element of the array.

  1. Interpreting Interfacial Structure in Cross-Sectional STM Images of III-V Semiconductor Heterostructures

    National Research Council Canada - National Science Library

    Nosho, B. Z; Barvosa-Carter, W; Yang, M. J; Bennett, B. R; Whitman, L. J

    2000-01-01

    ...) can be used for the study of III-V heterostructure interfaces. The interpretation of interfacial structure in XSTM images is impeded by the fact that only every other III or V plane as grown on the (001...

  2. Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser

    Science.gov (United States)

    Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song

    2018-01-01

    We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

  3. 1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

    DEFF Research Database (Denmark)

    Hansen, Anders Kragh; Christensen, Mathias; Noordegraaf, Danny

    2017-01-01

    Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation......, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction...... power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination...

  4. Synchronization and bidirectional communication without delay line using strong mutually coupled semiconductor lasers

    Science.gov (United States)

    Li, Guang-Hui; Wang, An-Bang; Feng, Ye; Wang, Yang

    2010-07-01

    This paper numerically demonstrates synchronization and bidirectional communication without delay line by using two semiconductor lasers with strong mutual injection in a face-to-face configuration. These results show that both of the two lasers' outputs synchronize with their input chaotic carriers. In addition, simulations demonstrate that this kind of synchronization can be used to realize bidirectional communications without delay line. Further studies indicate that within a small deviation in message amplitudes of two sides (±6%), the message can be extracted with signal-noise-ratio more than 10 dB; and the signal-noise-ratio is extremely sensitive to the message rates mismatch of two sides, which may be used as a key of bidirectional communication.

  5. Synchronization and bidirectional communication without delay line using strong mutually coupled semiconductor lasers

    International Nuclear Information System (INIS)

    Guang-Hui, Li; An-Bang, Wang; Ye, Feng; Yang, Wang

    2010-01-01

    This paper numerically demonstrates synchronization and bidirectional communication without delay line by using two semiconductor lasers with strong mutual injection in a face-to-face configuration. These results show that both of the two lasers' outputs synchronize with their input chaotic carriers. In addition, simulations demonstrate that this kind of synchronization can be used to realize bidirectional communications without delay line. Further studies indicate that within a small deviation in message amplitudes of two sides (±6%), the message can be extracted with signal-noise-ratio more than 10 dB; and the signal-noise-ratio is extremely sensitive to the message rates mismatch of two sides, which may be used as a key of bidirectional communication. (general)

  6. Comparative study of the performance of semiconductor laser based coherent Doppler lidars

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Pedersen, Christian

    2012-01-01

    Coherent Doppler Lidars (CDLs), operating at an eye-safe 1.5-micron wavelength, have found promising applications in the optimization of wind-power production. To meet the wind-energy sector's impending demand for more cost-efficient industrial sensors, we have focused on the development of conti......Coherent Doppler Lidars (CDLs), operating at an eye-safe 1.5-micron wavelength, have found promising applications in the optimization of wind-power production. To meet the wind-energy sector's impending demand for more cost-efficient industrial sensors, we have focused on the development...... of continuous-wave CDL systems using compact, inexpensive semiconductor laser (SL) sources. In this work, we compare the performance of two candidate emitters for an allsemiconductor CDL system: (1) a monolithic master-oscillator-power-amplifier (MOPA) SL and (2) an external-cavity tapered diode laser (ECTDL)....

  7. Dual-comb spectroscopy of water vapor with a free-running semiconductor disk laser.

    Science.gov (United States)

    Link, S M; Maas, D J H C; Waldburger, D; Keller, U

    2017-06-16

    Dual-comb spectroscopy offers the potential for high accuracy combined with fast data acquisition. Applications are often limited, however, by the complexity of optical comb systems. Here we present dual-comb spectroscopy of water vapor using a substantially simplified single-laser system. Very good spectroscopy measurements with fast sampling rates are achieved with a free-running dual-comb mode-locked semiconductor disk laser. The absolute stability of the optical comb modes is characterized both for free-running operation and with simple microwave stabilization. This approach drastically reduces the complexity for dual-comb spectroscopy. Band-gap engineering to tune the center wavelength from the ultraviolet to the mid-infrared could optimize frequency combs for specific gas targets, further enabling dual-comb spectroscopy for a wider range of industrial applications. Copyright © 2017, American Association for the Advancement of Science.

  8. Selection of modes in transverse-mode waveguides for semiconductor lasers based on asymmetric heterostructures

    International Nuclear Information System (INIS)

    Slipchenko, S. O.; Bondarev, A. D.; Vinokurov, D. A.; Nikolaev, D. N.; Fetisova, N. V.; Sokolova, Z. N.; Pikhtin, N. A.; Tarasov, I. S.

    2009-01-01

    Asymmetric Al 0.3 Ga 0.7 As/GaAs/InGaAs heterostructures with a broadened waveguide produced by the method of MOCVD epitaxy are studied. It is established that the precision shift of the active region to one of the cladding layers ensures the generation of the chosen mode of high order in the transverse broadened waveguide. It is experimentally established that this shift brings about an increase in internal optical losses and a decrease in the internal quantum efficiency of stimulated emission. It is shown experimentally that the shift of the active region to the n-type cladding layer governs the sublinear form of the power-current characteristic for semiconductor lasers; in the case of a shift of the active region towards the p-type cladding layer, the laser diodes demonstrated a linear dependence of optical power on the pump current in the entire range of pump currents.

  9. Analytical model of ground-state lasing phenomenon in broadband semiconductor quantum dot lasers

    Science.gov (United States)

    Korenev, Vladimir V.; Savelyev, Artem V.; Zhukov, Alexey E.; Omelchenko, Alexander V.; Maximov, Mikhail V.

    2013-05-01

    We introduce an analytical approach to the description of broadband lasing spectra of semiconductor quantum dot lasers emitting via ground-state optical transitions of quantum dots. The explicit analytical expressions describing the shape and the width of lasing spectra as well as their temperature and injection current dependences are obtained in the case of low homogeneous broadening. It is shown that in this case these dependences are determined by only two dimensionless parameters, which are the dispersion of the distribution of QDs over the energy normalized to the temperature and loss-to-maximum gain ratio. The possibility of optimization of laser's active region size and structure by using the intentionally introduced disorder is also carefully considered.

  10. New semiconductor laser technology for gas sensing applications in the 1650nm range

    Science.gov (United States)

    Morrison, Gordon B.; Sherman, Jes; Estrella, Steven; Moreira, Renan L.; Leisher, Paul O.; Mashanovitch, Milan L.; Stephen, Mark; Numata, Kenji; Wu, Stewart; Riris, Haris

    2017-08-01

    Atmospheric methane (CH4) is the second most important anthropogenic greenhouse gas with approximately 25 times the radiative forcing of carbon dioxide (CO2) per molecule. CH4 also contributes to pollution in the lower atmosphere through chemical reactions leading to ozone production. Recent developments of LIDAR measurement technology for CH4 have been previously reported by Goddard Space Flight Center (GSFC). In this paper, we report on a novel, high-performance tunable semiconductor laser technology developed by Freedom Photonics for the 1650nm wavelength range operation, and for LIDAR detection of CH4. Devices described are monolithic, with simple control, and compatible with low-cost fabrication techniques. We present 3 different types of tunable lasers implemented for this application.

  11. Carrier-envelope offset frequency stabilization of an ultrafast semiconductor laser

    Science.gov (United States)

    Jornod, Nayara; Gürel, Kutan; Wittwer, Valentin J.; Brochard, Pierre; Hakobyan, Sargis; Schilt, Stéphane; Waldburger, Dominik; Keller, Ursula; Südmeyer, Thomas

    2018-02-01

    We present the self-referenced stabilization of the carrier-envelope offset (CEO) frequency of a semiconductor disk laser. The laser is a SESAM-modelocked VECSEL emitting at a wavelength of 1034 nm with a repetition frequency of 1.8 GHz. The 270-fs pulses are amplified to 3 W and compressed to 120 fs for the generation of a coherent octavespanning supercontinuum spectrum. A quasi-common-path f-to-2f interferometer enables the detection of the CEO beat with a signal-to-noise ratio of 30 dB sufficient for its frequency stabilization. The CEO frequency is phase-locked to an external reference with a feedback signal applied to the pump current.

  12. Wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback

    International Nuclear Information System (INIS)

    Osborne, S; Heinricht, P; Brandonisio, N; Amann, A; O’Brien, S

    2012-01-01

    The wavelength switching dynamics of two-colour semiconductor lasers with optical injection and feedback are presented. These devices incorporate slotted regions etched into the laser ridge waveguide for tailoring the output spectrum. Experimental measurements are presented demonstrating that optical injection in one or both modes of these devices can induce wavelength bistability. Measured switching dynamics with modulated optical injection are shown to be in excellent agreement with numerical simulations based on a simple rate equation model. We also demonstrate experimentally that time-delayed optical feedback can induce wavelength bistability for short external cavity lengths. Numerical simulations indicate that this two-colour optical feedback system can provide fast optical memory functionality based on injected optical pulses without the need for an external holding beam. (paper)

  13. High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

    Directory of Open Access Journals (Sweden)

    Xianshu eLuo

    2015-04-01

    Full Text Available Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon substrate. The achievements so far include the successful demonstration of III/V-on-Si hybrid lasers through III/V-gain material to silicon wafer bonding technology. However, for potential large-scale integration, leveraging on mature silicon complementary metal oxide semiconductor (CMOS fabrication technology and infrastructure, more effective bonding scheme with high bonding yield is in great demand considering manufacturing needs. In this paper, we propose and demonstrate a high-throughput multiple dies-to-wafer (D2W bonding technology which is then applied for the demonstration of hybrid silicon lasers. By temporarily bonding III/V dies to a handle silicon wafer for simultaneous batch processing, it is expected to bond unlimited III/V dies to silicon device wafer with high yield. As proof-of-concept, more than 100 III/V dies bonding to 200 mm silicon wafer is demonstrated. The high performance of the bonding interface is examined with various characterization techniques. Repeatable demonstrations of 16-III/V-die bonding to pre-patterned 200 mm silicon wafers have been performed for various hybrid silicon lasers, in which device library including Fabry-Perot (FP laser, lateral-coupled distributed feedback (LC-DFB laser with side wall grating, and mode-locked laser (MLL. From these results, the presented multiple D2W bonding technology can be a key enabler towards the large-scale heterogeneous integration of optoelectronic integrated circuits (H-OEIC.

  14. Quantitative STEM on indium containing group III-V semiconductor nanostructures

    International Nuclear Information System (INIS)

    Mehrtens, Thorsten

    2013-01-01

    In the framework of this thesis. a method for compositional analysis of semiconductor nanostructures is applied on technologically relevant group III-V alloys. It is based on a quantitative comparison between intensities of experimentally acquired High-Angle Annular Dark Field Scanning Tansmission Electron Microscopy (HAADF-STEM) images and simulated intensities from multislice calculations in the frozen lattice approach. The demonstrated method allows determination of specimen thickness and material composition on subnanometer scale. Since quantitative HAADF-STEM is still a very young technique, its applicability has only been proven for a few materials, yet. Thus, the main goal of this thesis is the simulation of suitable reference datasets for different ternary semiconducting alloys and to test their reliability by complementary analysis. A total of three different semiconducting materials are thereby analyzed (InGaN, InGaAs and InAlN) that have all in common that they contain indium. The main focus of this work lies on InGaN which is due to its bandgap particularly suitable for the fabrication of optoelectronic devices operating in the visible spectrum of the light. In the first part of the presented results, the quality of ultra-thin TEM-specimens prepared by techniques involving ion milling at high energies is optimized. This is done by an additional ion milling step where the impinging ions possess an energy of only 400 eV. It is found that the preparation induced amorphous surface layer that occurs during ion milling can be drastically reduced below 1 nm. The second part concentrates on results obtained on InGaN. Here, different simulations in the frozen lattice approach are carried out under certain conditions. These simulations either include or do not include thermal diffuse scattering and/or static atomic displacement to demonstrate their influence on the amount of intensity measured in the experiment. As the consideration of thermal diffuse scattering

  15. Memory Effect on Adaptive Decision Making with a Chaotic Semiconductor Laser

    Directory of Open Access Journals (Sweden)

    Takatomo Mihana

    2018-01-01

    Full Text Available We investigate the effect of a memory parameter on the performance of adaptive decision making using a tug-of-war method with the chaotic oscillatory dynamics of a semiconductor laser. We experimentally generate chaotic temporal waveforms of the semiconductor laser with optical feedback and apply them for adaptive decision making in solving a multiarmed bandit problem that aims at maximizing the total reward from slot machines whose hit probabilities are dynamically switched. We examine the dependence of making correct decisions on different values of the memory parameter. The degree of adaptivity is found to be enhanced with a smaller memory parameter, whereas the degree of convergence to the correct decision is higher for a larger memory parameter. The relations among the adaptivity, environmental changes, and the difficulties of the problem are also discussed considering the requirement of past decisions. This examination of ultrafast adaptive decision making highlights the importance of memorizing past events and paves the way for future photonic intelligence.

  16. Atomic scale study of intrinsic and Mn doped quantum dots in III-V semiconductors

    NARCIS (Netherlands)

    Bozkurt, M.

    2011-01-01

    In this thesis, a Cross Sectional Scanning Tunneling Microscope (X-STM) is used to investigate nanostructures in IIIV semiconductors and single Mn impurities in bulk GaAs. The atomic resolution which can be achieved with X-STM makes it possible to link structural properties of nanostructures to

  17. Magnetic and transoprt properties of (III, Mn)V ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Sinova, J.; MacDonald, A. H.

    2003-01-01

    Roč. 104, - (2003), s. 103-112 ISSN 0587-4246 R&D Projects: GA ČR GA202/98/0085 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * magneto-transport Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.473, year: 2003

  18. Modulation doping and delta doping of III-V compound semiconductors

    NARCIS (Netherlands)

    Hendriks, P.; Zwaal, E.A.E.; Haverkort, J.E.M.; Wolter, J.H.; Razeghi, M.

    1991-01-01

    The transport properties of the 2D electron gas produced by modulation doping of compound semiconductors are reviewed with attention given to the properties at high electric fields. Experimental studies are discussed in which the transport properties lead to insights into current instabilities and

  19. High temperature semiconductor diode laser pumps for high energy laser applications

    Science.gov (United States)

    Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

    2018-02-01

    Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

  20. Photochemistry Aspects of the Laser Pyrolysis Addressing the Preparation of Oxide Semiconductor Photocatalysts

    Directory of Open Access Journals (Sweden)

    R. Alexandrescu

    2008-01-01

    Full Text Available The laser pyrolysis is a powerful and a versatile tool for the gas-phase synthesis of nanoparticles. In this paper, some fundamental and applicative characteristics of this technique are outlined and recent results obtained in the preparation of gamma iron oxide (γ-Fe2O3 and titania (TiO2 semiconductor nanostructures are illustrated. Nanosized iron oxide particles (4 to 9 nm diameter values have been directly synthesized by the laser-induced pyrolysis of a mixture containing iron pentacarbonyl/air (as oxidizer/ethylene (as sensitizer. Temperature-dependent Mossbauer spectroscopy shows that mainly maghemite is present in the sample obtained at higher laser power. The use of selected Fe2O3 samples for the preparation of water-dispersed magnetic nanofluids is also discussed. TiO2 nanoparticles comprising a mixture of anatase and rutile phases were synthesized via the laser pyrolysis of TiCl4- (vapors based gas-phase mixtures. High precursor concentration of the oxidizer was found to favor the prevalent anatase phase (about 90% in the titania nanopowders.

  1. Laser line scan underwater imaging by complementary metal-oxide-semiconductor camera

    Science.gov (United States)

    He, Zhiyi; Luo, Meixing; Song, Xiyu; Wang, Dundong; He, Ning

    2017-12-01

    This work employs the complementary metal-oxide-semiconductor (CMOS) camera to acquire images in a scanning manner for laser line scan (LLS) underwater imaging to alleviate backscatter impact of seawater. Two operating features of the CMOS camera, namely the region of interest (ROI) and rolling shutter, can be utilized to perform image scan without the difficulty of translating the receiver above the target as the traditional LLS imaging systems have. By the dynamically reconfigurable ROI of an industrial CMOS camera, we evenly divided the image into five subareas along the pixel rows and then scanned them by changing the ROI region automatically under the synchronous illumination by the fun beams of the lasers. Another scanning method was explored by the rolling shutter operation of the CMOS camera. The fun beam lasers were turned on/off to illuminate the narrow zones on the target in a good correspondence to the exposure lines during the rolling procedure of the camera's electronic shutter. The frame synchronization between the image scan and the laser beam sweep may be achieved by either the strobe lighting output pulse or the external triggering pulse of the industrial camera. Comparison between the scanning and nonscanning images shows that contrast of the underwater image can be improved by our LLS imaging techniques, with higher stability and feasibility than the mechanically controlled scanning method.

  2. Towards the generation of random bits at terahertz rates based on a chaotic semiconductor laser

    International Nuclear Information System (INIS)

    Kanter, Ido; Aviad, Yaara; Reidler, Igor; Cohen, Elad; Rosenbluh, Michael

    2010-01-01

    Random bit generators (RBGs) are important in many aspects of statistical physics and crucial in Monte-Carlo simulations, stochastic modeling and quantum cryptography. The quality of a RBG is measured by the unpredictability of the bit string it produces and the speed at which the truly random bits can be generated. Deterministic algorithms generate pseudo-random numbers at high data rates as they are only limited by electronic hardware speed, but their unpredictability is limited by the very nature of their deterministic origin. It is widely accepted that the core of any true RBG must be an intrinsically non-deterministic physical process, e.g. measuring thermal noise from a resistor. Owing to low signal levels, such systems are highly susceptible to bias, introduced by amplification, and to small nonrandom external perturbations resulting in a limited generation rate, typically less than 100M bit/s. We present a physical random bit generator, based on a chaotic semiconductor laser, having delayed optical feedback, which operates reliably at rates up to 300Gbit/s. The method uses a high derivative of the digitized chaotic laser intensity and generates the random sequence by retaining a number of the least significant bits of the high derivative value. The method is insensitive to laser operational parameters and eliminates the necessity for all external constraints such as incommensurate sampling rates and laser external cavity round trip time. The randomness of long bit strings is verified by standard statistical tests.

  3. Towards the generation of random bits at terahertz rates based on a chaotic semiconductor laser

    Science.gov (United States)

    Kanter, Ido; Aviad, Yaara; Reidler, Igor; Cohen, Elad; Rosenbluh, Michael

    2010-06-01

    Random bit generators (RBGs) are important in many aspects of statistical physics and crucial in Monte-Carlo simulations, stochastic modeling and quantum cryptography. The quality of a RBG is measured by the unpredictability of the bit string it produces and the speed at which the truly random bits can be generated. Deterministic algorithms generate pseudo-random numbers at high data rates as they are only limited by electronic hardware speed, but their unpredictability is limited by the very nature of their deterministic origin. It is widely accepted that the core of any true RBG must be an intrinsically non-deterministic physical process, e.g. measuring thermal noise from a resistor. Owing to low signal levels, such systems are highly susceptible to bias, introduced by amplification, and to small nonrandom external perturbations resulting in a limited generation rate, typically less than 100M bit/s. We present a physical random bit generator, based on a chaotic semiconductor laser, having delayed optical feedback, which operates reliably at rates up to 300Gbit/s. The method uses a high derivative of the digitized chaotic laser intensity and generates the random sequence by retaining a number of the least significant bits of the high derivative value. The method is insensitive to laser operational parameters and eliminates the necessity for all external constraints such as incommensurate sampling rates and laser external cavity round trip time. The randomness of long bit strings is verified by standard statistical tests.

  4. Quantifying the statistical complexity of low-frequency fluctuations in semiconductor lasers with optical feedback

    International Nuclear Information System (INIS)

    Tiana-Alsina, J.; Torrent, M. C.; Masoller, C.; Garcia-Ojalvo, J.; Rosso, O. A.

    2010-01-01

    Low-frequency fluctuations (LFFs) represent a dynamical instability that occurs in semiconductor lasers when they are operated near the lasing threshold and subject to moderate optical feedback. LFFs consist of sudden power dropouts followed by gradual, stepwise recoveries. We analyze experimental time series of intensity dropouts and quantify the complexity of the underlying dynamics employing two tools from information theory, namely, Shannon's entropy and the Martin, Plastino, and Rosso statistical complexity measure. These measures are computed using a method based on ordinal patterns, by which the relative length and ordering of consecutive interdropout intervals (i.e., the time intervals between consecutive intensity dropouts) are analyzed, disregarding the precise timing of the dropouts and the absolute durations of the interdropout intervals. We show that this methodology is suitable for quantifying subtle characteristics of the LFFs, and in particular the transition to fully developed chaos that takes place when the laser's pump current is increased. Our method shows that the statistical complexity of the laser does not increase continuously with the pump current, but levels off before reaching the coherence collapse regime. This behavior coincides with that of the first- and second-order correlations of the interdropout intervals, suggesting that these correlations, and not the chaotic behavior, are what determine the level of complexity of the laser's dynamics. These results hold for two different dynamical regimes, namely, sustained LFFs and coexistence between LFFs and steady-state emission.

  5. Band Gap Distortion in Semiconductors Strongly Driven by Intense Mid-Infrared Laser Fields

    Science.gov (United States)

    Kono, J.; Chin, A. H.

    2000-03-01

    Crystalline solids non-resonantly driven by intense time-periodic electric fields are predicted to exhibit unusual band-gap distortion.(e.g., Y. Yacoby, Phys. Rev. 169, 610 (1968); L.C.M. Miranda, Solid State Commun. 45, 783 (1983); J.Z. Kaminski, Acta Physica Polonica A 83, 495(1993).) Such non-perturbative effects have not been observed to date because of the unavoidable sample damage due to the very high intensity required using conventional lasers ( 1 eV photon energy). Here, we report the first clear evidence of laser-induced bandgap shrinkage in semiconductors under intense mid-infrared (MIR) laser fields. The use of long-wavelength light reduces the required intensity and prohibits strong interband absorption, thereby avoiding the damage problem. The significant sub-bandgap absorption persists only during the existence of the MIR laser pulse, indicating the virtual nature of the effect. We show that this particular example of non-perturbative behavior, known as the dynamical Franz-Keldysh effect, occurs when the effective ponderomotive potential energy is comparable to the photon energy of the applied field. This work was supported by ONR, NSF, JST and NEDO.

  6. Preparation of antimony sulfide semiconductor nanoparticles by pulsed laser ablation in liquid

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Ren-De, E-mail: son003@sekisui.com [Research & Development Institute, High Performance Plastics Company, Sekisui Chemical Co., Ltd. 2-1 Hyakuyama, Shimamoto-Cho, Mishima-Gun, Osaka, 618-0021 (Japan); Tsuji, Takeshi [Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu-Cho, Matsue, 690-8504 (Japan)

    2015-09-01

    Highlights: • Pulsed laser ablation in liquid (LAL) was applied to prepare antimony sulfide nanoparticles (Sb{sub 2}S{sub 3} NPs). • Sb{sub 2}S{sub 3} NPs with a stoichiometric composition were successfully prepared by LAL in water without using any surfactants or capping agents. • Thus-prepared Sb{sub 2}S{sub 3} NPs showed low-temperature crystallization and melting at a temperature low as 200 °C. • The NPs-coated Sb{sub 2}S{sub 3} thin film showed comparable semiconductor properties (carrier mobility and carrier density) to the vacuum deposited one. • Byproducts such as CS{sub 2}, CH{sub 4} and CO were detected by GC-MS analysis when LAL was performed in organic solvent. • The LAL-induced decomposition mechanism of Sb{sub 2}S{sub 3} and organic solvents was discussed based on the GC-MS results. - Abstract: In this paper, we report on the synthesis of antimony sulfide (Sb{sub 2}S{sub 3}) semiconductor nanoparticles by pulsed laser ablation in liquid without using any surfactants or capping agents. Different results were obtained in water and organic solvents. In the case of water, Sb{sub 2}S{sub 3} nanoparticles with chemical compositions of stoichiometry were successfully prepared when laser irradiation was performed under the condition with the dissolved oxygen removed by argon gas bubbling. It was shown that thus-obtained Sb{sub 2}S{sub 3} nanoparticles exhibit features of not only low-temperature crystallization but also low-temperature melting at a temperature as low as 200 °C. Nanoparticle-coated Sb{sub 2}S{sub 3} thin films were found to show good visible light absorption and satisfying semiconductor properties (i.e., carrier mobility and density), which are essential for photovoltaic application. On the other hand, in the case of organic solvents (e.g., acetone, ethanol), such unexpected byproducts as CS{sub 2}, CO and CH{sub 4} were detected from the reaction system by GC-MS analysis, which suggests that both Sb{sub 2}S{sub 3} and organic

  7. Ultrabroadband Hybrid III-V/SOI Grating Reflector for On-chip Lasers

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Taghizadeh, Alireza; Chung, Il-Sug

    2016-01-01

    We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability.......We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability....

  8. Discrimination of defects in III-V semiconductors by positron lifetime distribution

    CERN Document Server

    Chen, Z Q; Wang, S J

    2000-01-01

    In this paper, the numerical Laplace inversion technique and maximum entropy method are utilized to extract continuous positron lifetime distribution in semiconductors. The result is used to discriminate the native vacancy-type defects in as-grown GaAs and In P with different conduction type. Direct evidence of shallow positron traps were also observed in ion-implanted p-In P. It is demonstrated that the lifetime distribution can give us more detailed information on the native defects.

  9. Non-Drude optical conductivity of (III, Mn)V ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Yang, S.R. E.; Sinova, J.; Jungwirth, Tomáš; Shim, Y. P.; MacDonald, A. H.

    2003-01-01

    Roč. 67, č. 4 (2003), s. 045205-1 - 045205-7 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912; GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : non-Drude optical conductivity * ferromagnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

  10. Copper vapour laser with an efficient semiconductor pump generator having comparable pump pulse and output pulse durations

    Energy Technology Data Exchange (ETDEWEB)

    Yurkin, A A [P N Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)

    2016-03-31

    We report the results of experimental studies of a copper vapour laser with a semiconductor pump generator capable of forming virtually optimal pump pulses with a current rise steepness of about 40 A ns{sup -1} in a KULON LT-1.5CU active element. To maintain the operating temperature of the active element's channel, an additional heating pulsed oscillator is used. High efficiency of the pump generator is demonstrated. (lasers)

  11. A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. II. Spatio-temporal dynamics

    Science.gov (United States)

    Böhringer, Klaus; Hess, Ortwin

    The spatio-temporal dynamics of novel semiconductor lasers is discussed on the basis of a space- and momentum-dependent full time-domain approach. To this means the space-, time-, and momentum-dependent Full-Time Domain Maxwell Semiconductor Bloch equations, derived and discussed in our preceding paper I [K. Böhringer, O. Hess, A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation], are solved by direct numerical integration. Focussing on the device physics of novel semiconductor lasers that profit, in particular, from recent advances in nanoscience and nanotechnology, we discuss the examples of photonic band edge surface emitting lasers (PBE-SEL) and semiconductor disc lasers (SDLs). It is demonstrated that photonic crystal effects can be obtained for finite crystal structures, and leading to a significant improvement in laser performance such as reduced lasing thresholds. In SDLs, a modern device concept designed to increase the power output of surface-emitters in combination with near-diffraction-limited beam quality, we explore the complex interplay between the intracavity optical fields and the quantum well gain material in SDL structures. Our simulations reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers, and stimulated recombination from states near the band edge. Our full time-domain approach is shown to also be an excellent framework for the modelling of the interaction of high-intensity femtosecond and picosecond pulses with semiconductor nanostructures. It is demonstrated that group velocity dispersion, dynamical gain saturation and fast self-phase modulation (SPM) are the main causes for the induced changes and asymmetries in the amplified pulse shape and spectrum of an ultrashort high-intensity pulse. We attest that the time constants of the intraband scattering processes are critical to gain recovery. Moreover, we present

  12. Frequency-swept laser light source at 1050 nm with higher bandwidth due to multiple semiconductor optical amplifiers in series

    DEFF Research Database (Denmark)

    Marschall, Sebastian; Thrane, Lars; Andersen, Peter E.

    2009-01-01

    We report on the development of an all-fiber frequency-swept laser light source in the 1050 nm range based on semiconductor optical amplifiers (SOA) with improved bandwidth due to multiple gain media. It is demonstrated that even two SOAs with nearly equal gain spectra can improve the performance...

  13. Ultrafast dynamics of laser-pulse excited semiconductors: non-Markovian quantum kinetic equations with nonequilibrium correlations

    Directory of Open Access Journals (Sweden)

    V.V.Ignatyuk

    2004-01-01

    Full Text Available Non-Markovian kinetic equations in the second Born approximation are derived for a two-zone semiconductor excited by a short laser pulse. Both collision dynamics and running nonequilibrium correlations are taken into consideration. The energy balance and relaxation of the system to equilibrium are discussed. Results of numerical solution of the kinetic equations for carriers and phonons are presented.

  14. Degradation of Side-Mode Suppression Ratio in a DFB Laser Integrated With a Semiconductor Optical Amplifier

    DEFF Research Database (Denmark)

    Champagne, A.; Lestrade, Michel; Camel, Jérôme

    2004-01-01

    The degradation of the side-mode suppression ratio (SMSR) in a monolithically integrated distributed feedback laser and semiconductor optical amplifier (SOA) cavity is investigated. An expression is derived that gives the degradation of the SMSR in the case of a perfectly antireflection-coated SO...

  15. Pulsed laser deposition of semiconductor-ITO composite films on electric-field-applied substrates

    International Nuclear Information System (INIS)

    Narazaki, Aiko; Sato, Tadatake; Kawaguchi, Yoshizo; Niino, Hiroyuki; Yabe, Akira; Sasaki, Takeshi; Koshizaki, Naoto

    2002-01-01

    The DC electric-field effect on the crystallinity of II-VI semiconductor in composite systems has been investigated for CdS-ITO films fabricated via alternative pulsed laser deposition (PLD) of CdS and indium tin oxide (ITO) on electric-field-applied substrates. The alternative laser ablation was performed under irradiation of ArF excimer laser in mixture gas of helium and oxygen. The application of electric-field facilitated the preferential crystal-growth of CdS in nanometer scale at low pressure, whereas all the films grown without the field were amorphous. There is a large difference in the crystallization between the films grown on field-applied and heated substrates; the latter showed the crystal-growth with random orientations. This difference indicates that the existence of electric-field has an influence on the transformation from amorphous to crystalline phase of CdS. The driving force for the field-induced crystallization is also discussed in the light of the Joule heat

  16. Organic semiconductor rubrene thin films deposited by pulsed laser evaporation of solidified solutions

    Science.gov (United States)

    Majewska, N.; Gazda, M.; Jendrzejewski, R.; Majumdar, S.; Sawczak, M.; Śliwiński, G.

    2017-08-01

    Organic semiconductor rubrene (C42H28) belongs to most preferred spintronic materials because of the high charge carrier mobility up to 40 cm2(V·s)-1. However, the fabrication of a defect-free, polycrystalline rubrene for spintronic applications represents a difficult task. We report preparation and properties of rubrene thin films deposited by pulsed laser evaporation of solidified solutions. Samples of rubrene dissolved in aromatic solvents toluene, xylene, dichloromethane and 1,1-dichloroethane (0.23-1% wt) were cooled to temperatures in the range of 16.5-163 K and served as targets. The target ablation was provided by a pulsed 1064 nm or 266 nm laser. For films of thickness up to 100 nm deposited on Si, glass and ITO glass substrates, the Raman and AFM data show presence of the mixed crystalline and amorphous rubrene phases. Agglomerates of rubrene crystals are revealed by SEM observation too, and presence of oxide/peroxide (C42H28O2) in the films is concluded from matrix-assisted laser desorption/ionization time-of-flight spectroscopic analysis.

  17. Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

    Science.gov (United States)

    McInerney, John G.

    2016-03-01

    Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

  18. Narrow-band modulation of semiconductor lasers at millimeter wave frequencies (7100 GHz) by mode locking

    International Nuclear Information System (INIS)

    Lau, K.Y.

    1990-01-01

    This paper reports on the possibility of mode locking a semiconductor laser at millimeter wave frequencies approaching and beyond 100 GHz which was investigated theoretically and experimentally. It is found that there are no fundamental theoretical limitations in mode locking at frequencies below 100 GHz. AT these high frequencies, only a few modes are locked and the output usually takes the form of a deep sinusoidal modulation which is synchronized in phase with the externally applied modulation at the intermodal heat frequency. This can be regarded for practical purposes as a highly efficient means of directly modulating an optical carrier over a narrow band at millimeter wave frequencies. Both active and passive mode locking are theoretically possible. Experimentally, predictions on active mode locking have been verified in prior publications up to 40 GHz. For passive mode locking, evidence consistent with passive mode locking was observed in an inhomogeneously pumped GaAIAs laser at a frequency of approximately 70 GHz. A large differential gain-absorption ratio such as that present in an inhomogeneously pumped single quantum well laser is necessary for pushing the passive mode-locking frequency beyond 100 GHz

  19. Gain optimization and saturation of the Xe III 109 nm auger laser

    International Nuclear Information System (INIS)

    Macklin, J.J.; Sher, M.H.; Barty, C.P.J.; King, D.A.; Yin, G.Y.; Harris, S.E.; Young, J.F.

    1988-01-01

    The authors describe the construction and operation of a 109 nm, photoionization-pumped, single-pass laser in Xe III. The laser is pumped by soft x-rays emitted from a laser-produced plasma in a traveling-wave geometry. Using a 3.5 J, 300 psec, 1064 nm laser pump pulse, they measure a small-signal gain coefficient of 4.4 cm -1 and a total small signal gain of exp(40). The laser is fully saturated and produces an output energy of 20 μJ in a beam with 10 mrad divergence

  20. Continuously tunable solution-processed organic semiconductor DFB lasers pumped by laser diode

    DEFF Research Database (Denmark)

    Klinkhammer, Sönke; Liu, Xin; Huska, Klaus

    2012-01-01

    The fabrication and characterization of continuously tunable, solution-processed distributed feedback (DFB) lasers in the visible regime is reported. Continuous thin film thickness gradients were achieved by means of horizontal dipping of several conjugated polymer and blended small molecule solu...

  1. A new standardless quantitative electron probe microanalysis technique applied to III-V compound semiconductors

    International Nuclear Information System (INIS)

    Zangalis, K.P.; Christou, A.

    1982-01-01

    The present paper introduces a new standardless quantitative scheme for off-line electron microprobe analysis applications. The analysis is based on standard equations of the type Isub(i)=Csub(i)fsub(ZAF)βsub(i) and is specifically suitable for compound semiconductors. The roots to the resultant nth-degree polynomial are the unknown concentrations. Methods for computing Csub(i) when coefficients βsub(i) are unknown are also outlined. Applications of standardless analysis to GaAs and InP specimens are compared with results obtained by Auger electron spectroscopy and quantitative electron probe analysis with standards. (Auth.)

  2. FY1995 ultra-high performance semiconductor lasers for advanced optical information network; 1995 nendo kodo hikari joho tsushinmo e muketa kyokugen seino handotai laser

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    The purpose of this research was to study and develop ultra-high performance semiconductor light source devices that should facilitate construction of advanced optical information networks. The semiconductor devices mentioned above are enhanced and integrated versions of distributed feedback (DFB) lasers based on 'gain coupling', which the group of the research coordinator has been investigating as a pioneer in the world. This research aimed at development of ultra-high performance semiconductor lasers that surpass the first generation conventional DFB lasers in any respect, by strengthening important device characteristics for system applications of the gain-coupled DFB lasers. The achievements of this research are listed below : 1. In-situ characterization of As-P exchange in MOVPE 2. Development of 1.55 {mu}m gain-coupled DFB lasers of absorptive grating type 3. Establishment of measurement technique for gain-coupling coefficients 4. Enlargement of small signal modulation response by the absorptive grating 5. Prediction of lower analog modulation distortion 6. Characterization of reflection-induced noise 7. Proposal and Demonstration of wavelength trimming 8. Proposal and Fabrication of GC DFB laser triode (NEDO)

  3. Chaos-based communications using semiconductor lasers subject to feedback from an integrated double cavity

    International Nuclear Information System (INIS)

    Tronciu, V Z; Mirasso, Claudio R; Colet, Pere

    2008-01-01

    We report the results of numerical investigations of the dynamical behaviour of an integrated device composed of a semiconductor laser and a double cavity that provides optical feedback. Due to the influence of the feedback, under the appropriate conditions, the system displays chaotic behaviour appropriate for chaos-based communications. The optimal conditions for chaos generation are identified. It is found that the double cavity feedback requires lower feedback strengths for developing high complexity chaos when compared with a single cavity. The synchronization of two unidirectional coupled (master-slave) systems and the influence of parameters mismatch on the synchronization quality are also studied. Finally, examples of message encoding and decoding are presented and discussed

  4. Switchable semiconductor optical fiber laser incorporating AWG and broadband FBG with high SMSR

    International Nuclear Information System (INIS)

    Ahmad, H; Zulkifli, M Z; Thambiratnam, K; Latiff, A A; Harun, S W

    2009-01-01

    In this paper we propose and demonstrate a switchable wavelength fiber laser (SWFL) using a semiconductor optical amplifier (SOA) together with an arrayed waveguide grating (AWG). The proposed SOA-based SWFL is capable of generating up to 14 lasing channels from 1530.1 nm to 1534.9 nm at a channel spacing of 0.8 nm (100 GHz) and a bandwidth of 11.8 and 10.2 nm respectively. The EDFA-based SWFL has a higher peak power at –5 dBm, while to SOA-based SWFL has a peak power of only –10 dBm. However, the SOA-based SWFL exhibits a much better SMSR of between 10 to 20 dB as compared to the SMSR of the EDFA-based SWFL due to the inhomogeneous broadening properties of the SOA

  5. ABC-model analysis of gain-switched pulse characteristics in low-dimensional semiconductor lasers

    Science.gov (United States)

    Bao, Xumin; Liu, Yuejun; Weng, Guoen; Hu, Xiaobo; Chen, Shaoqiang

    2018-01-01

    The gain-switching dynamics of low-dimensional semiconductor lasers is simulated numerically by using a two-dimensional rate-equation model. Use is also made of the ABC model, where the carrier recombination rate is described by a function of carrier densities including Shockley - Read - Hall (SRH) recombination coefficient A, spontaneous emission coefficient B and Auger recombination coefficient C. Effects of the ABC parameters on the ultrafast gain-switched pulse characteristics with high-density pulse excitation are analysed. It is found that while the parameter A has almost no obvious effects, the parameters B and C have distinctly different effects: B influences significantly the delay time of the gain-switched pulse, while C affects mainly the pulse intensity.

  6. Ultrasensitive detection of cell lysing in an microfabricated semiconductor laser cavity

    Energy Technology Data Exchange (ETDEWEB)

    Gourley, P.L.; French, T.; McDonald, A.E.; Shields, E.A. [Sandia National Labs., Albuquerque, NM (United States); Gourley, M.F. [Washington Hospital Center, Washington, DC (United States)

    1998-01-01

    In this paper the authors report investigations of semiconductor laser microcavities for use in detecting changes of human blood cells during lysing. By studying the spectra before and during mixing of blood fluids with de-ionized water, they are able to quantify the cell shape and concentration of hemoglobin in real time during the dynamical process of lysing. The authors find that the spectra can detect subtle changes that are orders of magnitude smaller than can be observed by standard optical microscopy. Such sensitivity in observing cell structural changes has implications for measuring cell fragility, monitoring apoptotic events in real time, development of photosensitizers for photodynamic therapy, and in-vitro cell micromanipulation techniques.

  7. Four distributed feedback laser array integrated with multimode-interference and semiconductor optical amplifier

    International Nuclear Information System (INIS)

    Ma Li; Zhu Hong-Liang; Liang Song; Zhao Ling-Juan; Chen Ming-Hua

    2013-01-01

    Monolithic integration of four 1.55-μm-range InGaAsP/InP distributed feedback (DFB) lasers using varied ridge width with a 4 × 1-multimode-interference (MMI) optical combiner and a semiconductor optical amplifier (SOA) is demonstrated. The average output power and the threshold current are 1.8 mW and 35 mA, respectively, when the injection current of the SOA is 100 mA, with a side mode suppression ratio (SMSR) exceeding 40 dB. The four channels have a 1-nm average channel spacing and can operate separately or simultaneously. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  8. Coherent Optical Generation of a 6 GHz Microwave Signal with Directly Phase Locked Semiconductor DFB Lasers

    DEFF Research Database (Denmark)

    Gliese, Ulrik Bo; Nielsen, Torben Nørskov; Bruun, Marlene

    1992-01-01

    Experimental results of a wideband heterodyne second order optical phase locked loop with 1.5 ¿m semiconductor lasers are presented. The loop has a bandwidth of 180 MHz, a gain of 181 dBHz and a propagation delay of only 400 ps. A beat signal of 8 MHz linewidth is phase locked to become a replica...... of a microwave reference source close to carrier with a noise level of ¿125 dBc/Hz. The total phase variance of the locked carrier is 0.04 rad2 and carriers can be generated in a continuous range from 3 to 18 GHz. The loop reliability is excellent with an average time to cycle slip of 1011 seconds...

  9. Controlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures.

    Science.gov (United States)

    Ng, Wing H; Lu, Yao; Liu, Huiyun; Carmalt, Claire J; Parkin, Ivan P; Kenyon, Anthony J

    2018-02-23

    Inorganic semiconductors such as III-V materials are very important in our everyday life as they are used for manufacturing optoelectronic and microelectronic components with important applications span from energy harvesting to telecommunications. In some applications, these components are required to operate in harsh environments. In these cases, having waterproofing capability is essential. Here we demonstrate design and control of the wettability of indium phosphide based multilayer material (InP/InGaAs/InP) using re-entrant structures fabricated by a fast electron beam lithography technique. This patterning technique enabled us to fabricate highly uniform nanostructure arrays with at least one order of magnitude shorter patterning times compared to conventional electron beam lithography methods. We reduced the surface contact fraction significantly such that the water droplets may be completely removed from our nanostructured surface. We predicted the wettability of our patterned surface by modelling the adhesion energies between the water droplet and both the patterned surface and the dispensing needle. This is very useful for the development of coating-free waterproof optoelectronic and microelectronic components where the coating may hinder the performance of such devices and cause problems with semiconductor fabrication compatibility.

  10. Switching waves dynamics in optical bistable cavity-free system at femtosecond laser pulse propagation in semiconductor under light diffraction

    Science.gov (United States)

    Trofimov, Vyacheslav A.; Egorenkov, Vladimir A.; Loginova, Maria M.

    2018-02-01

    We consider a propagation of laser pulse in a semiconductor under the conditions of an occurrence of optical bistability, which appears due to a nonlinear absorption of the semiconductor. As a result, the domains of high concentration of free charged particles (electrons and ionized donors) occur if an intensity of the incident optical pulse is greater than certain intensity. As it is well-known, that an optical beam must undergo a diffraction on (or reflection from) the domains boundaries. Usually, the beam diffraction along a coordinate of the optical pulse propagation does not take into account by using the slowly varying envelope approximation for the laser pulse interaction with optical bistable element. Therefore, a reflection of the beam from the domains with abrupt boundary does not take into account under computer simulation of the laser pulse propagation. However, the optical beams, reflected from nonhomogeneities caused by the domains of high concentration of free-charged particles, can essentially influence on a formation of switching waves in a semiconductor. We illustrate this statement by computer simulation results provided on the base of nonlinear Schrödinger equation and a set of PDEs, which describe an evolution of the semiconductor characteristics (concentrations of free-charged particles and potential of an electric field strength), and taking into account the longitudinal and transverse diffraction effects.

  11. Optimisation of 1.3 μm strained-layer semiconductor lasers

    International Nuclear Information System (INIS)

    Pacey, C.

    1999-03-01

    The objectives of the research undertaken have been to investigate the properties of semiconductor lasers operating at around 1.3 μm. The aim of the investigation is to suggest modifications which give rise to improved operating characteristics especially in the high temperature (approaching 85 deg. C) range. The investigation can be divided into 2 sections: a theoretical approach and an experimental section. The theoretical study examined the performance of compressively strained InGaAsP/InP multiple quantum-well lasers emitting at 1.3 μm. in order to investigate the important factors and trends in the threshold current density and differential gain with strain, well width and well number. Structures with a fixed compressive strain of 1% but variable well width, and also with a fixed well width but variable strain from 0% to 1.4% have been considered. It has been found that there is little benefit to having compressive strains greater than 1%. For structures with a fixed 1% compressive strain and unstrained barriers, an optimum structure for lowest threshold current density and a high differential gain has been found to consist of six 35 A quantum-wells. In addition, compensated strain (CS) structures with compressive wells and tensile barriers have been examined. It is shown that the conduction band offset can be significantly increased and the valence band offset reduced in such structures, to give band-offset ratios comparable with aluminium based 1.3 μm devices. The gain calculations performed suggest that there is little degradation in the threshold carrier density or differential gain due to these alterations in the band offsets; and hence a better laser performance is expected due to a reduction in thermal leakage currents due to the improved electron confinement. The experimental study concentrates on looking at certain key design parameters to investigate their effect on the laser performance. These design parameters range from the number of quantum

  12. Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

    Science.gov (United States)

    Ullah, A. R.; Carrad, D. J.; Krogstrup, P.; Nygârd, J.; Micolich, A. P.

    2018-02-01

    Doping is a common route to reducing nanowire transistor on-resistance but it has limits. A high doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be doping in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of subthreshold swing and contact resistance that surpasses the best existing p -type nanowire metal-oxide semiconductor field-effect transistors (MOSFETs). Our subthreshold swing of 75 mV/dec is within 25 % of the room-temperature thermal limit and comparable with n -InP and n -GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications.

  13. Study and characterization of III-V semiconductor materials for applications in ionizing radiation detection

    International Nuclear Information System (INIS)

    Moulin, H.

    1989-11-01

    The photoconduction in the bulk of the gallium arsenide (GaAs) and of the indium phosphide doped with iron (InP:Fe) is investigated. These semiconductor materials are to be applied in X rays detection. The photoconduction theory and the physical characteristics of those materials are reviewed. The computer simulation models for studying the photoconductor responses to the radiation pulses are described. The experimental results are discussed. They include the following aspects: the characterization of the GaAs and InP:Fe, in the obscurity, as a function of the polarized electric field and of the neutrons dose; the characterization under X ray. Continuous X rays and pulsed synchrotron radiation are applied [fr

  14. Rate equation analysis and non-Hermiticity in coupled semiconductor laser arrays

    Science.gov (United States)

    Gao, Zihe; Johnson, Matthew T.; Choquette, Kent D.

    2018-05-01

    Optically coupled semiconductor laser arrays are described by coupled rate equations. The coupled mode equations and carrier densities are included in the analysis, which inherently incorporate the carrier-induced nonlinearities including gain saturation and amplitude-phase coupling. We solve the steady-state coupled rate equations and consider the cavity frequency detuning and the individual laser pump rates as the experimentally controlled variables. We show that the carrier-induced nonlinearities play a critical role in the mode control, and we identify gain contrast induced by cavity frequency detuning as a unique mechanism for mode control. Photon-mediated energy transfer between cavities is also discussed. Parity-time symmetry and exceptional points in this system are studied. Unbroken parity-time symmetry can be achieved by judiciously combining cavity detuning and unequal pump rates, while broken symmetry lies on the boundary of the optical locking region. Exceptional points are identified at the intersection between broken symmetry and unbroken parity-time symmetry.

  15. Key Topics in Producing New Ultraviolet Led and Laser Devices Based on Transparent Semiconductor Zinc Oxide

    International Nuclear Information System (INIS)

    Tuezemen, S.

    2004-01-01

    Recently, it has been introduced that ZnO as II-VI semiconductor is promising various technological applications, especially for optoelectronic short wavelength light emitting devices due to its wide and direct band gap profile. The most important advantage of ZnO over the other currently used wide band gap semiconductors such as GaN is that its nearly 3 times higher exciton binding energy (60 meV), which permits efficient excitonic emission at room temperature and above. As-grown ZnO is normally n-type because of the Zn-rich defects such as zinc interstitials (Zn i ) oxygen vacancies (Vo), natively acting as shallow donors and main source of n-type conductivity in as-grown material. Therefore, making p-type ZnO has been more difficult due to unintentional compensation of possible acceptors by these residual donors. In order to develop electro luminescent and laser devices based on the ultraviolet (UV) exciton emission of ZnO, it will be important to fabricate good p-n junctions. Attempts to observe p-type conductivity in ours and our collaborators' laboratories in USA, either by co-doping with N or tuning O pressure have been first successful achievements, resulting in hole concentrations up to 10 1 9 cm - 3 in reactively sputtered thin layers of ZnO. Moreover, in order to produce ZnO based quantum well lasers similar to the previously introduced n-AlGaAs/GaAs/p-AlGaAs structures; we have attempted to grow Zn 1 -xSn x O thin films to enlarge the band gap energy. An increase up to 170 meV has been observed in Zn 1 -xSn x O thin films and this is enough barrier to be able to trap electron-hole pairs in quantum well structures. As a result, two important key issues; p-type conductivity and enhancement of the band gap energy in order to step forward towards the production of electro luminescent UV LEDs and quantum well lasers have been investigated and will be presented in this study

  16. Flexible 2D RF Nanoelectronics based on Layered Semiconductor Transistor (NBIT III)

    Science.gov (United States)

    2016-11-11

    potential amenability to low-cost fabrication sequence. Tuning their properties by modulating the free carrier type and density and composition can...challenges and limitations to moving forward in flexible electronics technologies. The chemical doping effect is gradually reduced over time. Moreover...doping temperature, which maximizes at the center of the laser reaction spot. The full width half maximum (FWHM) of the PL intensity profile was

  17. Phase-coherent transport and spin-orbit-coupling in III/V-semiconductor nanowires

    International Nuclear Information System (INIS)

    Estevez Hernandez, Sergio

    2009-01-01

    Semiconductor nanowires fabricated by a bottom-up approach are not only interesting for the realization of future nanoscaled devices but also appear to be very attractive model systems to tackle fundamental questions concerning the transport in strongly confined systems. In order to avoid the problem connected with carrier depletion, narrowband gap semiconductors, i.e., InAs or InN, or core-shell Nanowires, i.e., GaAs/AlGaAs, are preferred. The underlying reason is that in InAs or InN the Fermi-level pinning in the conduction band results in a carrier accumulation at the surface. In fact, the tubular topology of the surface electron gas opens up the possibility to observe unconventional quantum transport phenomena. When the phase-coherence length in the nanowire is comparable to its dimensions the conductance fluctuates if a magnetic field is applied or if the electron concentration is changed by means of a gate electrode. These so-called universal conductance fluctuations being in the order of e 2 /h originate from the fact that in small disordered samples, electron interference effects are not averaged out. In this work are analyzed universal conductance fluctuations to study the quantum transport properties in InN, InAs and GaAs/AlGaAs nanowires. With the use of a magnetic field and a back-gate electrode the universal conductance fluctuations and localizations effects were analyzed. Since InN and InAs are narrow band gap semiconductors, one naturally expects spin-orbit coupling effects. Because this phenomena is of importance for spin electronic applications. However, owing to the cylindrical symmetry of the InN and InAs nanowires, the latter effect was observable and actually be used to determine the strength of spin-orbit coupling. In order to clearly separate the weak antilocalization effect from the conductance fluctuations, the averaging of the magnetoconductance at different gate voltages was essential. The low-temperature quantum transport properties of

  18. Investigation of Current Induced Spin Polarization in III-V Semiconductor Epilayers

    Science.gov (United States)

    Luengo-Kovac, Marta

    In the development of a semiconductor spintronics device, a thorough understanding of spin dynamics in semiconductors is necessary. In particular, electrical control of electron spins is advantageous for its compatibility with present day electronics. In this thesis, we will discuss the electrical modification of the electron g-factor, which characterizes the strength of the interaction between a spin and a magnetic field, as well as investigate electrically generated spin polarizations as a function of various material parameters. We report on the modification of the electron g-factor by an in-plane electric field in an InGaAs epilayer. We performed external magnetic field scans of the Kerr rotation of the InGaAs film in order to measure the g-factor independently of the spin-orbit fields. The g-factor increases from -0.4473(0.0001) at 0 V/cm to -0.4419( 0.0001) at 50 V/cm applied along the [110] crystal axis. A comparison of temperature and voltage dependent photoluminescence measurements indicate that minimal channel heating occurs at these voltages. Possible explanations for this g-factor modification are discussed, including an increase in the electron temperature that is independent of the lattice temperature and the modification of the donor-bound electron wave function by the electric field. The current-induced spin polarization and momentum-dependent spin-orbit field were measured in InGaAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the spin polarization mechanism is extrinsic. Temperature-dependent measurements of the spin dephasing rates and mobilities were used to characterize the relative strengths of the intrinsic D

  19. 1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

    Science.gov (United States)

    Hansen, A. K.; Christensen, M.; Noordegraaf, D.; Heist, P.; Papastathopoulos, E.; Loyo-Maldonado, V.; Jensen, O. B.; Stock, M. L.; Skovgaard, P. M. W.

    2017-02-01

    Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction- limited, single frequency operation with output powers up to 8 W near 1120 nm. We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications.

  20. Atomistic description of large nanostructures based on III-nitride semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Molina-Sanchez, Alejandro; Garcia-Cristobal, Alberto; Cantarero, Andres [Instituto de Ciencia de Materiales de la Universidad de Valencia (Spain); Terentjevs, Aleksandrs; Cicero, Giancarlo [Physics and Materials Science and Chemical Engineering Departments, Politecnico di Torino (Italy)

    2010-07-01

    Semiconductor nanocolumns exhibiting a growth without dislocations and high crystalline quality are of great interest in nanotechnology applications. Specifically, InN-based nanocolumns are good candidates to develop multi-junction solar cells due to their small gap, 0.67 eV, and the possibility of alloying with other nitrides (as GaN and AlN) to cover the entire solar spectrum. A proper description of optical properties of the nanostructures described above can start with an atomistic treatment of the electronic structure in order to keep the essential geometry and symmetry of the objects. Unfortunately, the best description realized with ab initio electronic structure software is strongly limited by the nanocolumn diameter to a few nanometers. By using a combination of ab initio and empirical tight-binding methods, we can connect the quality of the first principles calculations (performed with the Espresso code), with the versatility of an empirical approach. Once we have an ab initio quality parameter set for the empirical tight-binding code, we can study larger nanostructures with this approach, reducing the computation time in orders of magnitude.

  1. Optical characterisation of III-V nitride-based multiphase and diluted magnetic semiconductors

    International Nuclear Information System (INIS)

    Wegscheider, M.

    2009-01-01

    The present work is devoted to the investigation of the optical properties of transition metal doped Gallium nitride. The Gallium nitride layers are epitaxially grown in a full metalorganic chemical vapour deposition process whereas the transition metals iron or manganese as well as the n and p-type dopants silicon and magnesium are incorporated simultaneously. Background and driving force of the realization of such material systems is basically the evocation of ferromagnetic spin alignment where free carriers ensure the correspondence between the localized spin state provided by the metal ions. The production of completely new devices for semiconductor industries based on the possibility to switch on or off the ferrimagnetic alignment by changing the free carrier concentration can be expected in the near future. In this context photoluminescence studies in the ultraviolet and mid infrared spectral range at temperatures between the liquid helium point and room temperature at atmospheric pressure were made. These measurements basically provide information on optical transitions between the conduction and valence band and deep defects as well as on crystal field forced transitions within the d-orbitals of the metal ion involved. In this context valuable knowledge could have been gained on doping concentrations, growth fashions and parameters, formation of secondary phases as well as on the doping efficiency and incorporation sites of the metal atoms. (author) [de

  2. Optical and Temporal Carrier Dynamics Investigations of III-Nitrides for Semiconductor Lighting

    KAUST Repository

    Ajia, Idris A.

    2018-01-01

    In the first part of this dissertation, the effects of some important types of crystal defects present in III-nitride structures are investigated. Here, two types of defects are studied in two different III-nitride-based light emitting structures. The first defects of interest are V-pit defects in InGaN/GaN multiple quantum well (MQW) blue LEDs, where their contribution to the high-efficiency of such LEDs is discussed. In addition, the effect of these defects on the efficiency droop phenomenon in these LEDs is elucidated. Secondly, the optical effects of grain boundary defects in AlN-rich AlGaN/AlGaN MQWs is studied. In this study, it is shown that grain boundary defects may result in abnormal carrier localization behavior in these deep ultraviolet (UV) structures. While both defects are treated individually, it is evident from these studies that threading dislocation (TD) defects are an underlying contributor to the more undesirable outcomes of the said defects. In the second part, the dissertation reports on the carrier dynamics of III-nitride LED structures grown on emerging substrates—as possible efficiency enhancing techniques—aimed at mitigating the effects of TD defects. Thus, the carrier dynamics of GaN/AlGaN UV MQWs grown, for the first time, on (2̅01) – oriented β-Ga2O3 is studied. It is shown to be a candidate substrate for highly efficient vertical UV devices. Finally, results from the carrier dynamics investigation of an AlGaN/AlGaN MQW LED structure homoepitaxially grown on AlN substrate are discussed, where it is shown that its high-efficiency is sustained at high temperatures through the thermal redistribution of carriers to highly efficient recombination sites.

  3. Silicon photonics WDM transmitter with single section semiconductor mode-locked laser

    Science.gov (United States)

    Müller, Juliana; Hauck, Johannes; Shen, Bin; Romero-García, Sebastian; Islamova, Elmira; Azadeh, Saeed Sharif; Joshi, Siddharth; Chimot, Nicolas; Moscoso-Mártir, Alvaro; Merget, Florian; Lelarge, François; Witzens, Jeremy

    2015-04-01

    We demonstrate a wavelength domain-multiplexed (WDM) optical link relying on a single section semiconductor mode-locked laser (SS-MLL) with quantum dash (Q-Dash) gain material to generate 25 optical carriers spaced by 60.8 GHz, as well as silicon photonics (SiP) resonant ring modulators (RRMs) to modulate individual optical channels. The link requires optical reamplification provided by an erbium-doped fiber amplifier (EDFA) in the system experiments reported here. Open eye diagrams with signal quality factors (Q-factors) above 7 are measured with a commercial receiver (Rx). For higher compactness and cost effectiveness, reamplification of the modulated channels with a semiconductor optical amplifier (SOA) operated in the linear regime is highly desirable. System and device characterization indicate compatibility with the latter. While we expect channel counts to be primarily limited by the saturation output power level of the SOA, we estimate a single SOA to support more than eight channels. Prior to describing the system experiments, component design and detailed characterization results are reported including design and characterization of RRMs, ring-based resonant optical add-drop multiplexers (RR-OADMs) and thermal tuners, S-parameters resulting from the interoperation of RRMs and RR-OADMs, and characterization of Q-Dash SS-MLLs reamplified with a commercial SOA. Particular emphasis is placed on peaking effects in the transfer functions of RRMs and RR-OADMs resulting from transient effects in the optical domain, as well as on the characterization of SS-MLLs in regard to relative intensity noise (RIN), stability of the modes of operation, and excess noise after reamplification.

  4. III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors

    KAUST Repository

    Detchprohm, T.

    2016-11-05

    The III-N wide-bandgap alloys in the AlInGaN system have many important and unique electrical and optical properties which have been exploited to develop deep-ultraviolet (DUV) optical devices operating at wavelengths < 300 nm, including light-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic chemical vapor deposition as well as the properties of epitaxial layers and heterostructure devices. In addition, we discuss the simulation and design of DUV laser diodes, the processing of III-N optical devices, and the description of the current state of the art of DUV lasers and photodetectors.

  5. Controlling the unstable emission of a semiconductor laser subject to conventional optical feedback with a filtered feedback branch.

    Science.gov (United States)

    Ermakov, I V; Tronciu, V Z; Colet, Pere; Mirasso, Claudio R

    2009-05-25

    We show the advantages of controlling the unstable dynamics of a semiconductor laser subject to conventional optical feedback by means of a second filtered feedback branch. We give an overview of the analytical solutions of the double cavity feedback and show numerically that the region of stabilization is much larger when using a second branch with filtered feedback than when using a conventional feedback one.

  6. Controlling the unstable emission of a semiconductor laser subject to conventional optical feedback with a filtered feedback branch

    OpenAIRE

    Ermakov, Ilya; Tronciu, Vasile; Colet, Pere; Mirasso, Claudio R.

    2009-01-01

    We show the advantages of controlling the unstable dynamics of a semiconductor laser subject to conventional optical feedback by means of a second filtered feedback branch. We give an overview of the analytical solutions of the double cavity feedback and show numerically that the region of stabilization is much larger when using a second branch with filtered feedback than when using a conventional feedback one.

  7. Field test of an all-semiconductor laser-based coherent continuous-wave Doppler lidar for wind energy applications

    DEFF Research Database (Denmark)

    Sjöholm, Mikael; Dellwik, Ebba; Hu, Qi

    -produced all-semiconductor laser. The instrument is a coherent continuous-wave lidar with two fixed-focus telescopes for launching laser beams in two different directions. The alternation between the telescopes is achieved by a novel switching technique without any moving parts. Here, we report results from...... signal strength from external atmospheric parameters such as relative humidity and concentrations of atmospheric particles is discussed. This novel lidar instrument design seems to offer a promising low-cost alternative for prevision remote sensing of wind turbine inflow....

  8. Simulation of the Optimized Structure of a Laterally Coupled Distributed Feedback (LC-DFB Semiconductor Laser Above Threshold

    Directory of Open Access Journals (Sweden)

    M. Seifouri

    2013-10-01

    Full Text Available In this paper, the laterally coupled distributed feedback semiconductor laser is studied. In the simulations performed, variations of structural parameters such as the grating amplitude a, the ridge width W, the thickness of the active region d, and other structural properties are considered. It is concluded that for certain values ​​of structural parameters, the laser maintains the highest output power, the lowest distortion Bragg frequency δL and the smallest changes in the wavelength λ. Above threshold, output power more than 40mW and SMSR values greater than 50 dB were achieved.

  9. High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

    Directory of Open Access Journals (Sweden)

    Andreas Schmitt-Sody

    2008-01-01

    Full Text Available We report on hybrid mode-locked laser operation of a tapered semiconductor amplifier in an external ring cavity, generating pulses as short as 0.5 ps at 88.1 MHz with an average power of 60 mW. The mode locking is achieved through a combination of a multiple quantum well saturable absorber (>10% modulation depth and an RF current modulation. This designed laser has 20 nm tuning bandwidth in continuous wave and 10 nm tuning bandwidth in mode locking around 786 nm center wavelength at constant temperature.

  10. Improvement in semiconductor laser printing using a sacrificial protecting layer for organic thin-film transistors fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Rapp, Ludovic, E-mail: rapp@lp3.univ-mrs.fr [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France); Cibert, Christophe [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France); Nenon, Sebastien [CINaM (Centre Interdisciplinaire de Nanoscience de Marseille) - UPR 3118 CNRS - Universite Aix Marseille, Case 913, Campus de Luminy, 13288 Marseille Cedex 09 (France); Alloncle, Anne Patricia [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France); Nagel, Matthias [Empa, Swiss Federal Laboratories for Materials Testing and Reasearch, Laboratory for Functional Polymers, Uberlandstrasse 129, 8600 Duebendorf (Switzerland); Lippert, Thomas [Paul Scherrer Institut, General Energy Research Department, 5232 Villigen PSI (Switzerland); Videlot-Ackermann, Christine; Fages, Frederic [CINaM (Centre Interdisciplinaire de Nanoscience de Marseille) - UPR 3118 CNRS - Universite Aix Marseille, Case 913, Campus de Luminy, 13288 Marseille Cedex 09 (France); Delaporte, Philippe [Laboratoire LP3 (Lasers, Plasma et Procedes Photoniques) - UMR 6182 CNRS - Universite de la Mediterranee - Campus de Luminy C917, 13288 Marseille Cedex 09 (France)

    2011-04-01

    Laser-induced forward transfer (LIFT) has been used to deposit pixels of an organic semiconductor, distyryl-quaterthiophenes (DS4T). The dynamics of the process have been investigated by shadowgraphic imaging for the nanosecond (ns) and picosecond (ps) regime on a time-scale from the laser iradiation to 1.5 {mu}s. The morphology of the deposit has been studied for different conditions. Intermediate sacrificial layer of gold or triazene polymer has been used to trap the incident radiation. Its role is to protect the layer to be transferred from direct irradiation and to provide a mechanical impulse strong enough to eject the material.

  11. Selective injection locking of a multi-mode semiconductor laser to a multi-frequency reference beam

    Science.gov (United States)

    Pramod, Mysore Srinivas; Yang, Tao; Pandey, Kanhaiya; Giudici, Massimo; Wilkowski, David

    2014-07-01

    Injection locking is a well known and commonly used method for coherent light amplification. Usually injection locking is obtained on a single-mode laser injected by a single-frequency seeding beam. In this work we show that selective injection locking of a single-frequency may also be achieved on a multi-mode semiconductor laser injected by a multi-frequency seeding beam, if the slave laser provides sufficient frequency filtering. This selective injection locking condition depends critically on the frequency detuning between the free-running slave emission frequency and each injected frequency component. Stable selective injection locking to a set of three seeding components separated by 1.2 GHz is obtained. This system provides an amplification up to 37 dB of each component. This result suggests that, using distinct slave lasers for each frequency line, a set of mutually coherent high-power radiation modes can be tuned in the GHz frequency domain.

  12. THE DETERMINATION OF A CRITICAL VALUE FOR DYNAMIC STABILITY OF SEMICONDUCTOR LASER DIODE WITH EXTERNAL OPTICAL FEEDBACK

    Directory of Open Access Journals (Sweden)

    Remzi YILDIRIM

    1998-01-01

    Full Text Available In this study, dynamic stability analysis of semiconductor laser diodes with external optical feedback has been realized. In the analysis the frequency response of the transfer function of laser diode H jw( , the transfer m function of laser diode with external optical feedback TF jw( , and optical feedback transfer function m K jw( obtained from small signal equations has been m accomplished using Nyquist stability analysis in complex domain. The effect of optical feedback on the stability of the system has been introduced and to bring the laser diode to stable condition the working critical boundary range of dampig frequency and reflection power constant (R has been determined. In the study the reflection power has been taken as ( .

  13. Piezo activated mode tracking system for widely tunable mode-hop-free external cavity mid-IR semiconductor lasers

    Science.gov (United States)

    Wysocki, Gerard (Inventor); Tittel, Frank K. (Inventor); Curl, Robert F. (Inventor)

    2010-01-01

    A widely tunable, mode-hop-free semiconductor laser operating in the mid-IR comprises a QCL laser chip having an effective QCL cavity length, a diffraction grating defining a grating angle and an external cavity length with respect to said chip, and means for controlling the QCL cavity length, the external cavity length, and the grating angle. The laser of claim 1 wherein said chip may be tuned over a range of frequencies even in the absence of an anti-reflective coating. The diffraction grating is controllably pivotable and translatable relative to said chip and the effective QCL cavity length can be adjusted by varying the injection current to the chip. The laser can be used for high resolution spectroscopic applications and multi species trace-gas detection. Mode-hopping is avoided by controlling the effective QCL cavity length, the external cavity length, and the grating angle so as to replicate a virtual pivot point.

  14. Nanoscopic diffusion studies on III-V compound semiconductor structures: Experiment and theory

    Science.gov (United States)

    Gonzalez Debs, Mariam

    The electronic structure of multilayer semiconductor heterostructures is affected by the detailed compositional profiles throughout the structure and at critical interfaces. The extent of interdiffusion across these interfaces places limits on both the processing time and temperatures for many applications based on the resultant compositional profile and associated electronic structure. Atomic and phenomenological methods were used in this work through the combination of experiment and theory to understand the nanoscopic mechanisms in complex heterostructures. Two principal studies were conducted. Tin diffusion in GaAs was studied by fitting complex experimental diffusion profiles to a phenomenological model which involved the diffusion of substitutional and interstitial dopant atoms. A methodology was developed combining both the atomistic model and the use of key features within these experimentally-obtained diffusion profiles to determine meaningful values of the transport and defect reaction rate parameters. Interdiffusion across AlSb/GaSb multi-quantum well interfaces was also studied. The chemical diffusion coefficient characterizing the AlSb/GaSb diffusion couple was quantitatively determined by fitting the observed photoluminescence (PL) peak shifts to the solution of the Schrodinger equation using a potential derived from the solution of the diffusion equation to quantify the interband transition energy shifts. First-principles calculations implementing Density Functional Theory were performed to study the thermochemistry of point defects as a function of local environment, allowing a direct comparison of interfacial and bulk diffusion phenomena within these nanoscopic structures. Significant differences were observed in the Ga and Al vacancy formation energies at the AlSb/GaSb interface when compared to bulk AlSb and GaSb with the largest change found for Al vacancies. The AlSb/GaSb structures were further studied using positron annihilation spectroscopy

  15. Rapid supersensitive laser-semiconductor monitoring system. Time period covered: Dec. 15, 1993 - Dec. 15, 1994

    International Nuclear Information System (INIS)

    Pugatch, V.M.

    2001-01-01

    The creation of the rapid and sensitive system for the determination of the Alpha-radioactivity in the Environmental samples has been determined as the main goal of the Research Contract No. 7200RO/RB. As a result of the first stage of the research accomplished in the year 1993, the prototype of the system based on the combination of the laser photoionization mass spectrometry and many-channel alpha-spectrometer has been built and tested. To improve the sensitivity it was proposed to add one more stage to the laser photoionization mass-spectrometer. To develop the high position sensitivity of the system it was proposed to include into the alpha-radiometer SI strip-detector with submicron position sensitivity. Hardware and software for the laser-semiconductor monitoring system of alpha-radionuclides in the environment have been further developed and tested in frames of the IAEA Research Contract No. 7200/R1/RB. Optimization of the sample evaporation with one more stage of photoionization has been successfully performed in the laser photoionization mass-spectrometer. The automatization of the measurement procedure is under way by means of the IBM PC-386 and specially designed electronic units. The evaluated sensitivity of the new set-up is in the range of 1.0 Bq/kg. A bulk measurement of the alpha-radioactivity concentration in soil samples from the Chernobyl region (100 km) have been performed by means of thick samples method and built under this contract alpha-radiometer with large area SI semiconductor detectors. The lowest detectable level was in the range 100 Bq/kg without any radiochemical separation. Comparison with the data obtained for the same probes by means of the thin sample (with radiochemical separation) has shown higher Pu-concentration values obtained by means of the thick samples. For the first time the Sl-strip-detector with 128 channels has been applied for the alpha-radiometry purposes. Different read-out electronics (including the most

  16. Semiconductor Nanomaterials-Based Fluorescence Spectroscopic and Matrix-Assisted Laser Desorption/Ionization (MALDI Mass Spectrometric Approaches to Proteome Analysis

    Directory of Open Access Journals (Sweden)

    Suresh Kumar Kailasa

    2013-12-01

    Full Text Available Semiconductor quantum dots (QDs or nanoparticles (NPs exhibit very unusual physico-chemcial and optical properties. This review article introduces the applications of semiconductor nanomaterials (NMs in fluorescence spectroscopy and matrix-assisted laser desorption/ionization mass spectrometry (MALDI-MS for biomolecule analysis. Due to their unique physico-chemical and optical properties, semiconductors NMs have created many new platforms for investigating biomolecular structures and information in modern biology. These semiconductor NMs served as effective fluorescent probes for sensing proteins and cells and acted as affinity or concentrating probes for enriching peptides, proteins and bacteria proteins prior to MALDI-MS analysis.

  17. Network connectivity enhancement by exploiting all optical multicast in semiconductor ring laser

    Science.gov (United States)

    Siraj, M.; Memon, M. I.; Shoaib, M.; Alshebeili, S.

    2015-03-01

    The use of smart phone and tablet applications will provide the troops for executing, controlling and analyzing sophisticated operations with the commanders providing crucial documents directly to troops wherever and whenever needed. Wireless mesh networks (WMNs) is a cutting edge networking technology which is capable of supporting Joint Tactical radio System (JTRS).WMNs are capable of providing the much needed bandwidth for applications like hand held radios and communication for airborne and ground vehicles. Routing management tasks can be efficiently handled through WMNs through a central command control center. As the spectrum space is congested, cognitive radios are a much welcome technology that will provide much needed bandwidth. They can self-configure themselves, can adapt themselves to the user requirement, provide dynamic spectrum access for minimizing interference and also deliver optimal power output. Sometimes in the indoor environment, there are poor signal issues and reduced coverage. In this paper, a solution utilizing (CR WMNs) over optical network is presented by creating nanocells (PCs) inside the indoor environment. The phenomenon of four-wave mixing (FWM) is exploited to generate all-optical multicast using semiconductor ring laser (SRL). As a result same signal is transmitted at different wavelengths. Every PC is assigned a unique wavelength. By using CR technology in conjunction with PC will not only solve network coverage issue but will provide a good bandwidth to the secondary users.

  18. Electrical addressing and temporal tweezing of localized pulses in passively mode-locked semiconductor lasers

    Science.gov (United States)

    Javaloyes, J.; Camelin, P.; Marconi, M.; Giudici, M.

    2017-08-01

    This work presents an overview of a combined experimental and theoretical analysis on the manipulation of temporal localized structures (LSs) found in passively Vertical-Cavity Surface-Emitting Lasers coupled to resonant saturable absorber mirrors. We show that the pumping current is a convenient parameter for manipulating the temporal Localized Structures, also called localized pulses. While short electrical pulses can be used for writing and erasing individual LSs, we demonstrate that a current modulation introduces a temporally evolving parameter landscape allowing to control the position and the dynamics of LSs. We show that the localized pulses drifting speed in this landscape depends almost exclusively on the local parameter value instead of depending on the landscape gradient, as shown in quasi-instantaneous media. This experimental observation is theoretically explained by the causal response time of the semiconductor carriers that occurs on an finite timescale and breaks the parity invariance along the cavity, thus leading to a new paradigm for temporal tweezing of localized pulses. Different modulation waveforms are applied for describing exhaustively this paradigm. Starting from a generic model of passive mode-locking based upon delay differential equations, we deduce the effective equations of motion for these LSs in a time-dependent current landscape.

  19. Tunable and broadband microwave frequency combs based on a semiconductor laser with incoherent optical feedback

    International Nuclear Information System (INIS)

    Zhao Mao-Rong; Wu Zheng-Mao; Deng Tao; Zhou Zhen-Li; Xia Guang-Qiong

    2015-01-01

    Based on a semiconductor laser (SL) with incoherent optical feedback, a novel all-optical scheme for generating tunable and broadband microwave frequency combs (MFCs) is proposed and investigated numerically. The results show that, under suitable operation parameters, the SL with incoherent optical feedback can be driven to operate at a regular pulsing state, and the generated MFCs have bandwidths broader than 40 GHz within a 10 dB amplitude variation. For a fixed bias current, the line spacing (or repetition frequency) of the MFCs can be easily tuned by varying the feedback delay time and the feedback strength, and the tuning range of the line spacing increases with the increase in the bias current. The linewidth of the MFCs is sensitive to the variation of the feedback delay time and the feedback strength, and a linewidth of tens of KHz can be achieved through finely adjusting the feedback delay time and the feedback strength. In addition, mappings of amplitude variation, repetition frequency, and linewidth of MFCs in the parameter space of the feedback delay time and the feedback strength are presented. (paper)

  20. Dynamics of temporally localized states in passively mode-locked semiconductor lasers

    Science.gov (United States)

    Schelte, C.; Javaloyes, J.; Gurevich, S. V.

    2018-05-01

    We study the emergence and the stability of temporally localized structures in the output of a semiconductor laser passively mode locked by a saturable absorber in the long-cavity regime. For large yet realistic values of the linewidth enhancement factor, we disclose the existence of secondary dynamical instabilities where the pulses develop regular and subsequent irregular temporal oscillations. By a detailed bifurcation analysis we show that additional solution branches that consist of multipulse (molecules) solutions exist. We demonstrate that the various solution curves for the single and multipeak pulses can splice and intersect each other via transcritical bifurcations, leading to a complex web of solutions. Our analysis is based on a generic model of mode locking that consists of a time-delayed dynamical system, but also on a much more numerically efficient, yet approximate, partial differential equation. We compare the results of the bifurcation analysis of both models in order to assess up to which point the two approaches are equivalent. We conclude our analysis by the study of the influence of group velocity dispersion, which is only possible in the framework of the partial differential equation model, and we show that it may have a profound impact on the dynamics of the localized states.

  1. Direct immobilization and hybridization of DNA on group III nitride semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Xu Xiaobin; Jindal, Vibhu; Shahedipour-Sandvik, Fatemeh; Bergkvist, Magnus [College of Nanoscale Science and Engineering, University at Albany (SUNY), 255 Fuller Road, Albany, NY 12203 (United States); Cady, Nathaniel C. [College of Nanoscale Science and Engineering, University at Albany (SUNY), 255 Fuller Road, Albany, NY 12203 (United States)], E-mail: ncady@uamail.albany.edu

    2009-03-15

    A key concern for group III-nitride high electron mobility transistor (HEMT) biosensors is the anchoring of specific capture molecules onto the gate surface. To this end, a direct immobilization strategy was developed to attach single-stranded DNA (ssDNA) to AlGaN surfaces using simple printing techniques without the need for cross-linking agents or complex surface pre-functionalization procedures. Immobilized DNA molecules were stably attached to the AlGaN surfaces and were able to withstand a range of pH and ionic strength conditions. The biological activity of surface-immobilized probe DNA was also retained, as demonstrated by sequence-specific hybridization experiments. Probe hybridization with target ssDNA could be detected by PicoGreen fluorescent dye labeling with a minimum detection limit of 2 nM. These experiments demonstrate a simple and effective immobilization approach for attaching nucleic acids to AlGaN surfaces which can further be used for the development of HEMT-based DNA biosensors.

  2. Long-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networks

    International Nuclear Information System (INIS)

    Coelho, J; Patriarche, G; Glas, F; Saint-Girons, G; Sagnes, I

    2004-01-01

    We account for lateral orderings of III-V nanostructures resulting from a GaAs/InAs/InGaAs/GaAs sequence grown on GaAs by metallorganic vapour phase epitaxy at two different temperatures. For both samples, the ordering is induced by the stress field of a periodic dislocation network (DN) shallowly buried and parallel to the surface. This DN is a grain boundary (GB) that forms, between a thin GaAs layer (on which growth was performed) and a GaAs substrate joined together by wafer bonding, in order to accommodate a tilt and a twist between these two crystals; both these misorientations are imposed in a controlled manner. This GB is composed of a one-dimensional network of mixed dislocations and of a one-dimensional network of screw dislocations. For both samples, the nanostructures observed by transmission electron microscopy (TEM) and atomic force microscopy are ordered by the underlying DN observed by TEM since they have same dimensions and orientations as the cells of the DN

  3. Two Dimensional Effective Electron Mass at the Fermi Level in Quantum Wells of III-V, Ternary and Quaternary Semiconductors.

    Science.gov (United States)

    Chakrabarti, S; Chatterjee, B; Debbarma, S; Ghatak, K P

    2015-09-01

    In this paper we study the influence of strong electric field on the two dimensional (2D)effective electron mass (EEM) at the Fermi level in quantum wells of III-V, ternary and quaternary semiconductors within the framework of k x p formalism by formulating a new 2D electron energy spectrum. It appears taking quantum wells of InSb, InAs, Hg(1-x)Cd(x)Te and In(1-x)Ga(x)As(1-y)P(y) lattice matched to InP as examples that the EEM increases with decreasing film thickness, increasing electric field and increases with increasing surface electron concentration exhibiting spikey oscillations because of the crossing over of the Fermi level by the quantized level in quantum wells and the quantized oscillation occurs when the Fermi energy touches the sub-band energy. The electric field makes the mass quantum number dependent and the oscillatory mass introduces quantum number dependent mass anisotropy in addition to energy. The EEM increases with decreasing alloy composition where the variations are totally band structure dependent. Under certain limiting conditions all the results for all the cases get simplified into the well-known parabolic energy bands and thus confirming the compatibility test. The content of this paper finds three applications in the fields of nano-science and technology.

  4. Atomic scale images of acceptors in III-V semiconductors. Band bending, tunneling paths and wave functions

    Energy Technology Data Exchange (ETDEWEB)

    Loth, S.

    2007-10-26

    This thesis reports measurements of single dopant atoms in III-V semiconductors with low temperature Scanning Tunneling Microscopy (STM) and Scanning Tunneling Spectroscopy (STS). It investigates the anisotropic spatial distribution of acceptor induced tunneling processes at the {l_brace}110{r_brace} cleavage planes. Two different tunneling processes are identified: conventional imaging of the squared acceptor wave function and resonant tunneling at the charged acceptor. A thorough analysis of the tip induced space charge layers identifies characteristic bias windows for each tunnel process. The symmetry of the host crystal's band structure determines the spatial distribution of the tunneling paths for both processes. Symmetry reducing effects at the surface are responsible for a pronounced asymmetry of the acceptor contrasts along the principal [001] axis. Uniaxial strain fields due to surface relaxation and spin orbit interaction of the tip induced electric field are discussed on the basis of band structure calculations. High-resolution STS studies of acceptor atoms in an operating p-i-n diode confirm that an electric field indeed changes the acceptor contrasts. In conclusion, the anisotropic contrasts of acceptors are created by the host crystal's band structure and concomitant symmetry reduction effects at the surface. (orig.)

  5. Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory.

    Science.gov (United States)

    El-Atwani, O; Norris, S A; Ludwig, K; Gonderman, S; Allain, J P

    2015-12-16

    Several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.

  6. Wafer-scale laser pantography: Fabrication of n-metal-oxide-semiconductor transistors and small-scale integrated circuits by direct-write laser-induced pyrolytic reactions

    International Nuclear Information System (INIS)

    McWilliams, B.M.; Herman, I.P.; Mitlitsky, F.; Hyde, R.A.; Wood, L.L.

    1983-01-01

    A complete set of processes sufficient for manufacture of n-metal-oxide-semiconductor (n-MOS) transistors by a laser-induced direct-write process has been demonstrated separately, and integrated to yield functional transistors. Gates and interconnects were fabricated of various combinations of n-doped and intrinsic polysilicon, tungsten, and tungsten silicide compounds. Both 0.1-μm and 1-μm-thick gate oxides were micromachined with and without etchant gas, and the exposed p-Si [100] substrate was cleaned and, at times, etched. Diffusion regions were doped by laser-induced pyrolytic decomposition of phosphine followed by laser annealing. Along with the successful manufacture of working n-MOS transistors and a set of elementary digital logic gates, this letter reports the successful use of several laser-induced surface reactions that have not been reported previously

  7. A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures

    Directory of Open Access Journals (Sweden)

    Katsuaki Tanabe

    2009-07-01

    Full Text Available Solar cells are a promising renewable, carbon-free electric energy resource to address the fossil fuel shortage and global warming. Energy conversion efficiencies around 40% have been recently achieved in laboratories using III-V semiconductor compounds as photovoltaic materials. This article reviews the efforts and accomplishments made for higher efficiency III-V semiconductor compound solar cells, specifically with multijunction tandem, lower-dimensional, photonic up/down conversion, and plasmonic metallic structures. Technological strategies for further performance improvement from the most efficient (AlInGaP/(InGaAs/Ge triple-junction cells including the search for 1.0 eV bandgap semiconductors are discussed. Lower-dimensional systems such as quantum well and dot structures are being intensively studied to realize multiple exciton generation and multiple photon absorption to break the conventional efficiency limit. Implementation of plasmonic metallic nanostructures manipulating photonic energy flow directions to enhance sunlight absorption in thin photovoltaic semiconductor materials is also emerging.

  8. Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors

    Science.gov (United States)

    2015-08-27

    copyright information. 13. SUPPLEMENTARY NOTES. Enter information not included elsewhere such as: prepared in cooperation with; translation of; report...II-VI heterojunctions such as multi-color photodetectors and solar cells [2]. Mixing lattice-matched II-VI and III-V semiconductors could be an...at 77 K, further silicon oxide surface passivation can be done to suppress the surface leakage [10] in the future work. Figure 10 The dark I-V

  9. Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes

    KAUST Repository

    Myzaferi, A.; Reading, A. H.; Cohen, D. A.; Farrell, R. M.; Nakamura, S.; Speck, J. S.; DenBaars, S. P.

    2016-01-01

    The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time

  10. III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors

    KAUST Repository

    Detchprohm, T.; Li, Xiaohang; Shen, S.-C.; Yoder, P.D.; Dupuis, R.D.

    2016-01-01

    -emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic

  11. Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices

    Science.gov (United States)

    Horn, Kevin M [Albuquerque, NM

    2008-05-20

    A broad-beam laser irradiation apparatus can measure the parametric or functional response of a semiconductor device to exposure to dose-rate equivalent infrared laser light. Comparisons of dose-rate response from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems can determine if aging has affected the device's overall functionality. The dependence of these changes on equivalent dose-rate pulse intensity and/or duration can be measured with the apparatus. The synchronized introduction of external electrical transients into the device under test can be used to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure while exposing the device to dose-rate equivalent infrared laser light.

  12. Optical dynamics in low-dimensional semiconductor heterostructures. Quantum dots and quantum cascade lasers

    Energy Technology Data Exchange (ETDEWEB)

    Weber, Carsten

    2008-07-01

    This work is focused on the optical dynamics of mesoscopic semiconductor heterostructures, using as prototypes zero-dimensional quantum dots and quantum cascade lasers which consist of quasitwo- dimensional quantum wells. Within a density matrix theory, a microscopic many-particle theory is applied to study scattering effects in these structures: the coupling to external as well as local fields, electron-phonon coupling, coupling to impurities, and Coulomb coupling. For both systems, the investigated effects are compared to experimentally observed results obtained during the past years. In quantum dots, the three-dimensional spatial confinement leads to the necessity to consider a quantum kinetic description of the dynamics, resulting in non-Markovian electron-phonon effects. This can be seen in the spectral phonon sidebands due to interaction with acoustic phonons as well as a damping of nonlinear Rabi oscillations which shows a nonmonotonous intensity and pulse duration dependence. An analysis of the inclusion of the self-interaction of the quantum dot shows that no dynamical local field terms appear for the simple two-level model. Considering local fields which have their origin in many quantum dots, consequences for a two-level quantum dot such as a zero-phonon line broadening and an increasing signal in photon echo experiments are found. For the use of quantum dots in an optical spin control scheme, it is found that the dephasing due to the electron-phonon interaction can be dominant in certain regimes. Furthermore, soliton and breather solutions are studied analytically in nonlinear quantum dot ensembles. Generalizing to quasi-two-dimensional structures, the intersubband dynamics of quantum cascade laser structures is investigated. A dynamical theory is considered in which the temporal evolution of the subband populations and the current density as well as the influence of scattering effects is studied. In the nonlinear regime, the scattering dependence and

  13. Comprehension of Postmetallization Annealed MOCVD-TiO2 on (NH42S Treated III-V Semiconductors

    Directory of Open Access Journals (Sweden)

    Ming-Kwei Lee

    2012-01-01

    Full Text Available The electrical characteristics of TiO2 films grown on III-V semiconductors (e.g., p-type InP and GaAs by metal-organic chemical vapor deposition were studied. With (NH42S treatment, the electrical characteristics of MOS capacitors are improved due to the reduction of native oxides. The electrical characteristics can be further improved by the postmetallization annealing, which causes hydrogen atomic ion to passivate defects and the grain boundary of polycrystalline TiO2 films. For postmetallization annealed TiO2 on (NH42S treated InP MOS, the leakage current densities can reach 2.7 × 10−7 and 2.3 × 10−7 A/cm2 at ±1 MV/cm, respectively. The dielectric constant and effective oxide charges are 46 and 1.96 × 1012 C/cm2, respectively. The interface state density is 7.13×1011 cm−2 eV−1 at the energy of 0.67 eV from the edge of valence band. For postmetallization annealed TiO2 on (NH42S treated GaAs MOS, The leakage current densities can reach 9.7×10−8 and 1.4×10−7 at ±1 MV/cm, respectively. The dielectric constant and effective oxide charges are 66 and 1.86×1012 C/cm2, respectively. The interface state density is 5.96×1011 cm−2 eV−1 at the energy of 0.7 eV from the edge of valence band.

  14. Applications of confocal laser scanning microscopy in research into organic semiconductor thin films

    DEFF Research Database (Denmark)

    Schiek, Manuela; Balzer, Frank

    2014-01-01

    At the center of opto-electronic devices are thin layers of organic semiconductors, which need to be sandwiched between planar electrodes. With the growing demand for opto-electronic devices now and in the future, new electrode materials are needed to meet the requirements of organic semiconductors...

  15. Physics of laser fusion. Volume III. High-power pulsed lasers

    International Nuclear Information System (INIS)

    Holzrichter, J.F.; Eimerl, D.; George, E.V.; Trenholme, J.B.; Simmons, W.W.; Hunt, J.T.

    1982-09-01

    High-power pulsed lasers can deliver sufficient energy on inertial-confinement fusion (ICF) time scales (0.1 to 10 ns) to heat and compress deuterium-tritium fuel to fusion-reaction conditions. Several laser systems have been examined, including Nd:glass, CO 2 , KrF, and I 2 , for their ICF applicability. A great deal of developmental effort has been applied to the Nd:glass laser and the CO 2 gas laser systems; these systems now deliver > 10 4 J and 20 x 10 12 W to ICF targets. We are constructing the Nova Nd:glass laser at LLNL to provide > 100 kJ and > 100 x 10 12 W of 1-μm radiation for fusion experimentation in the mid-1980s. For ICF target gain > 100 times the laser input, we expect that the laser driver must deliver approx. 3 to 5 MJ of energy on a time scale of 10 to 20 ns. In this paper we review the technological status of fusion-laser systems and outline approaches to constructing high-power pulsed laser drivers

  16. Position-controlled epitaxial III-V nanowires on silicon

    NARCIS (Netherlands)

    Roest, A.L.; Verheijen, M.A.; Wunnicke, O.; Serafin, S.N.; Wondergem, H.J.; Bakkers, E.P.A.M.

    2006-01-01

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction

  17. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory

    Science.gov (United States)

    Bastos, Carlos M. O.; Sabino, Fernando P.; Sipahi, Guilherme M.; Da Silva, Juarez L. F.

    2018-02-01

    Despite the large number of theoretical III-V semiconductor studies reported every year, our atomistic understanding is still limited. The limitations of the theoretical approaches to yield accurate structural and electronic properties on an equal footing, is due to the unphysical self-interaction problem that mainly affects the band gap and spin-orbit splitting (SOC) in semiconductors and, in particular, III-V systems with similar magnitude of the band gap and SOC. In this work, we report a consistent study of the structural and electronic properties of the III-V semiconductors by using the screening hybrid-density functional theory framework, by fitting the α parameters for 12 different III-V compounds, namely, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, and InSb, to minimize the deviation between the theoretical and experimental values of the band gap and SOC. Structural relaxation effects were also included. Except for AlP, whose α = 0.127, we obtained α values that ranged from 0.209 to 0.343, which deviate by less than 0.1 from the universal value of 0.25. Our results for the lattice parameter and elastic constants indicate that the fitting of α does not affect those structural parameters when compared with the HSE06 functional, where α = 0.25. Our analysis of the band structure based on the k ṡ p method shows that the effective masses are in agreement with the experimental values, which can be attributed to the simultaneous fitting of the band gap and SOC. Also, we estimate the values of g-factors, extracted directly from the band structure, which are close to experimental results, which indicate that the obtained band structure produced a realistic set of k ṡ p parameters.

  18. Multistate intermittency on the route to chaos of a semiconductor laser subjected to optical feedback from a long external cavity.

    Science.gov (United States)

    Choi, Daeyoung; Wishon, Michael J; Chang, C Y; Citrin, D S; Locquet, A

    2018-01-01

    We observe experimentally two regimes of intermittency on the route to chaos of a semiconductor laser subjected to optical feedback from a long external cavity as the feedback level is increased. The first regime encountered corresponds to multistate intermittency involving two or three states composed of several combinations of periodic, quasiperiodic, and subharmonic dynamics. The second regime is observed for larger feedback levels and involves intermittency between period-doubled and chaotic regimes. This latter type of intermittency displays statistical properties similar to those of on-off intermittency.

  19. Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector

    International Nuclear Information System (INIS)

    Smith, Richard J.; Light, Roger A.; Johnston, Nicholas S.; Pitter, Mark C.; Somekh, Mike G.; Sharples, Steve D.

    2010-01-01

    This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

  20. Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector

    Energy Technology Data Exchange (ETDEWEB)

    Smith, Richard J.; Light, Roger A.; Johnston, Nicholas S.; Pitter, Mark C.; Somekh, Mike G. [Institute of Biophysics, Imaging and Optical Science, University of Nottingham, Nottinghamshire NG7 2RD (United Kingdom); Sharples, Steve D. [Applied Optics Group, Electrical Systems and Optics Research Division, University of Nottingham, Nottinghamshire NG7 2RD (United Kingdom)

    2010-02-15

    This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

  1. Single-layer group IV-V and group V-IV-III-VI semiconductors: Structural stability, electronic structures, optical properties, and photocatalysis

    Science.gov (United States)

    Lin, Jia-He; Zhang, Hong; Cheng, Xin-Lu; Miyamoto, Yoshiyuki

    2017-07-01

    Recently, single-layer group III monochalcogenides have attracted both theoretical and experimental interest at their potential applications in photonic devices, electronic devices, and solar energy conversion. Excited by this, we theoretically design two kinds of highly stable single-layer group IV-V (IV =Si ,Ge , and Sn; V =N and P) and group V-IV-III-VI (IV =Si ,Ge , and Sn; V =N and P; III =Al ,Ga , and In; VI =O and S) compounds with the same structures with single-layer group III monochalcogenides via first-principles simulations. By using accurate hybrid functional and quasiparticle methods, we show the single-layer group IV-V and group V-IV-III-VI are indirect bandgap semiconductors with their bandgaps and band edge positions conforming to the criteria of photocatalysts for water splitting. By applying a biaxial strain on single-layer group IV-V, single-layer group IV nitrides show a potential on mechanical sensors due to their bandgaps showing an almost linear response for strain. Furthermore, our calculations show that both single-layer group IV-V and group V-IV-III-VI have absorption from the visible light region to far-ultraviolet region, especially for single-layer SiN-AlO and SnN-InO, which have strong absorption in the visible light region, resulting in excellent potential for solar energy conversion and visible light photocatalytic water splitting. Our research provides valuable insight for finding more potential functional two-dimensional semiconductors applied in optoelectronics, solar energy conversion, and photocatalytic water splitting.

  2. The dynamics of the laser-induced metal-semiconductor phase transition of samarium sulfide (SmS)

    International Nuclear Information System (INIS)

    Kaempfer, Tino

    2009-01-01

    The present thesis is dedicated to the experimental study of the metal-semiconductor phase transition of samarium sulfide (SmS): Temperature- and time-resolved experiments on the characterization of the phase transition of mixed-valence SmS samples (M-SmS) are presented. The measurement of the dynamics of the laser-induced phase transition pursues via time-resolved ultrashort-time microscopy and by X-ray diffraction with sub-picosecond time resolution. The electronic and structural processes, which follow an excitation of M-SmS with infrared femtosecond laser pulses, are physically interpreted on the base of the results obtained in this thesis and model imaginations. [de

  3. Advanced materials for the optical delay line of frequency pulse modulator on the basis of semiconductor laser

    International Nuclear Information System (INIS)

    Abrarov, S.M.

    1999-01-01

    In the paper some materials which can be sued as an optical delay line of the pulse frequency modulator are considered. The structure and the principle are described as a modulator consisting of a laser diode with two Fabry Perot resonators and an optical wave guide providing a feedback loop. The optical wave guide fulfills the function of delay line and links the two resonators. The pulse sequence of the radiation of the semiconductor laser arises due to failure and recovery of optical generation. The pulse frequency modulation can be carried out by the action of electrical tension field on the electro optic martial of the wave guide. The selection of three electro-optic crystals for making of the optical wave guide of the considered modulator is justified. (author)

  4. Energy levels and far-infrared optical absorption of impurity doped semiconductor nanorings: Intense laser and electric fields effects

    Energy Technology Data Exchange (ETDEWEB)

    Barseghyan, M.G., E-mail: mbarsegh@ysu.am

    2016-11-10

    Highlights: • The electron-impurity interaction on energy levels in nanoring have been investigated. • The electron-impurity interaction on far-infrared absorption have been investigated. • The energy levels are more stable for higher values of electric field. - Abstract: The effects of electron-impurity interaction on energy levels and far-infrared absorption in semiconductor nanoring under the action of intense laser and lateral electric fields have been investigated. Numerical calculations are performed using exact diagonalization technique. It is found that the electron-impurity interaction and external fields change the energy spectrum dramatically, and also have significant influence on the absorption spectrum. Strong dependence on laser field intensity and electric field of lowest energy levels, also supported by the Coulomb interaction with impurity, is clearly revealed.

  5. Laser Raman and resonance Raman spectroscopies of natural semiconductor mineral cinnabar, α-HgS, from various mines

    International Nuclear Information System (INIS)

    Gotoshia, Sergo V; Gotoshia, Lamara V

    2008-01-01

    Natural minerals α-HgS from various mines have been studied by laser Raman spectroscopy and resonance Raman spectroscopy. The crystals differ from each other in the content of selenium impurity, included in samples from some mines. Based on the Raman spectra and the factor-group analysis the classification of the first order phonons and then the comparison of the results with the results from other works were carried out. The Raman spectra analysis of minerals from various mines show the selenium impurity gap vibration at 203 cm -1 and 226 cm -1 frequencies, respectively. On the basis of statistical measurements of the Raman spectra one can conclude that impurity frequencies of α-HgS may be generally used for the identification of the mine. Resonance Raman scattering for pure minerals has been studied by a dye laser. Phonon resonance in the indirect semiconductor α-HgS is found to be far more intense than the indirect resonance detected until now in various semiconductors in the proximity of the first indirect band E g , for instance, in GaP. In our opinion, this may be conditioned by cinnabar band structure peculiarities. Low resonance has also been fixed in 'dirty' minerals at the spectral band frequency of 203 cm -1 characterizing gap vibration of isomorphic impurity Se in cinnabar

  6. A novel image encryption algorithm based on synchronized random bit generated in cascade-coupled chaotic semiconductor ring lasers

    Science.gov (United States)

    Li, Jiafu; Xiang, Shuiying; Wang, Haoning; Gong, Junkai; Wen, Aijun

    2018-03-01

    In this paper, a novel image encryption algorithm based on synchronization of physical random bit generated in a cascade-coupled semiconductor ring lasers (CCSRL) system is proposed, and the security analysis is performed. In both transmitter and receiver parts, the CCSRL system is a master-slave configuration consisting of a master semiconductor ring laser (M-SRL) with cross-feedback and a solitary SRL (S-SRL). The proposed image encryption algorithm includes image preprocessing based on conventional chaotic maps, pixel confusion based on control matrix extracted from physical random bit, and pixel diffusion based on random bit stream extracted from physical random bit. Firstly, the preprocessing method is used to eliminate the correlation between adjacent pixels. Secondly, physical random bit with verified randomness is generated based on chaos in the CCSRL system, and is used to simultaneously generate the control matrix and random bit stream. Finally, the control matrix and random bit stream are used for the encryption algorithm in order to change the position and the values of pixels, respectively. Simulation results and security analysis demonstrate that the proposed algorithm is effective and able to resist various typical attacks, and thus is an excellent candidate for secure image communication application.

  7. High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)

    Science.gov (United States)

    Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Sakharov, A. V.; Ustinov, V. M.

    2018-01-01

    The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called "vertical-cavity surface-emitting lasers") under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ˜30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

  8. Stabilization in laser wavelength semiconductor with fiber optical amplifier application doped with erbium

    International Nuclear Information System (INIS)

    Camas, J.; Anzueto, G.; Mendoza, S.; Hernandez, H.; Garcia, C.; Vazquez, R.

    2009-01-01

    In this work, we present a novel electronic design of a DC source, which automatically controls the temperature of a tunable laser. The temperature change in the laser is carried out by the control of DC that circulates through a cooling stage where the laser is set. The laser can be tuned in a wavelength around 1550 nm. Its application is in Erbium Doped Fiber Amplifier (EDFA) in reflective configuration. (Author)

  9. Lasers

    CERN Document Server

    Milonni, Peter W

    1988-01-01

    A comprehensive introduction to the operating principles and applications of lasers. Explains basic principles, including the necessary elements of classical and quantum physics. Provides concise discussions of various laser types including gas, solid state, semiconductor, and free electron lasers, as well as of laser resonators, diffraction, optical coherence, and many applications including holography, phase conjugation, wave mixing, and nonlinear optics. Incorporates many intuitive explanations and practical examples. Discussions are self-contained in a consistent notation and in a style that should appeal to physicists, chemists, optical scientists and engineers.

  10. Semiconductor laser engineering, reliability and diagnostics a practical approach to high power and single mode devices

    CERN Document Server

    Epperlein, Peter W

    2013-01-01

    This reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature. Diode laser fundamentals are discussed, followed by an elaborate discussion of problem-oriented design guidelines and techniques, and by a systematic treatment of the origins of laser degradation and a thorough exploration of the engineering means to enhance the optical strength of the laser. Stability criteria of critical laser characteristics and key laser robustness factors are discussed along with clear design considerations in the context of reliability engineering approaches and models, and typical programs for reliability tests and laser product qualifications. Novel, advanced diagnostic methods are reviewed to discuss, for the first time in detail in book literature, performa...

  11. Study of the spectral width of intermode beats and optical spectrum of an actively mode-locked three-mirror semiconductor laser

    International Nuclear Information System (INIS)

    Zakharyash, Valerii F; Kashirsky, Aleksandr V; Klementyev, Vasilii M; Kuznetsov, Sergei A; Pivtsov, V S

    2005-01-01

    Various oscillation regimes of an actively mode-locked semiconductor laser are studied experimentally. Two types of regimes are found in which the minimal spectral width (∼3.5 kHz) of intermode beats is achieved. The width of the optical spectrum of modes is studied as a function of their locking and the feedback coefficients. The maximum width of the spectrum is ∼3.7 THz. (control of laser radiation parameters)

  12. Epitaxial Growth, Surface, and Electronic Properties of Unconventional Semiconductors: RE-V/III-V Nanocomposites and Semiconducting Half Heusler Alloys

    Science.gov (United States)

    2014-09-01

    10.1103/PhysRevLett.45.494. [2] D.C. Tsui, H.L. Stormer , and A.C. Gossard. Two-dimensional magnetotransport in the extreme quantum limit. Phys. Rev. Lett...5] R. Dingle, H. L. Stormer , A. C. Gossard, and W. Wiegmann. Electron mobil- ities in modulation-doped semiconductor heterojunction superlattices

  13. Novel low fluence combination laser treatment of solar lentigines in type III Asian skin

    Directory of Open Access Journals (Sweden)

    Brian Wei Cheng Anthony Tian

    2015-01-01

    Full Text Available Objective: To demonstrate a novel low fluence combination laser technique [Erbium-doped yttrium aluminum garnet (Erb:YAG and neodymium-doped yttrium aluminum garnet (Nd:YAG] to effectively treat solar lentigines in type III Asian skin in a single session. Design: A prospective study. Setting: A Singapore-based clinic. Participants: Five patients (all females were enrolled into the study. The ages ranged 35-60 years; all patients had Fitzpatrick skin type III. Measurements: Photographs were taken at baseline and at 1-month follow-up. These were reviewed by two independent physicians who were blinded to the study. Changes in pigment severity were assessed by a 5-point scale (1: Aggravation of pigment, 2: No change, 3: 25-50% improvement, 4: 51-75% improvement, and 5: 76-100% improvement. Results: All patients received a single treatment session. At 1-month follow-up, a reduction in pigment was observed in all patients. Both physicians′ reports were independently agreeable. All patients scored 5, having >90% improvement in pigment severity. No hypopigmentation, postinflammatory hyperpigmentation (PIH, or recurrence was seen. Conclusion: Low fluence combination laser is effective and safe for clearance of solar lentigines in type III Asian skin.

  14. Conductors, semiconductors and insulators irradiated with short-wavelength free-electron laser

    Czech Academy of Sciences Publication Activity Database

    Krzywinski, J.; Sobierajski, R.; Jurek, M.; Nietubyc, R.; Pelka, J. B.; Juha, Libor; Bittner, Michal; Létal, V.; Vorlíček, Vladimír; Andrejczuk, A.; Feldhaus, J.; Keitel, B.; Saldin, E.; Schneidmiller, E.A.; Treusch, R.; Yurkov, M. V.

    2007-01-01

    Roč. 101, č. 4 (2007), 043107/1-043107/4 ISSN 0021-8979 R&D Projects: GA MŠk 1P04LA235; GA MŠk LC510; GA MŠk(CZ) LC528 Institutional research plan: CEZ:AV0Z10100523 Keywords : free-electron laser * extreme ultraviolet * ablation * laser-matter interaction Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.171, year: 2007

  15. Phase noise reduction by self-phase locking in semiconductor lasers using phase conjugate feedback

    DEFF Research Database (Denmark)

    Petersen, Lykke; Gliese, Ulrik Bo; Nielsen, Torben Nørskov

    1994-01-01

    noise takes a finite-low value corresponding to a state of first-order self-phase locking of the laser. As a result, the spectral shape of the laser signal does not remain Lorentzian but collapses around the carrier to a delta function with a close to carrier noise level of less than -137 d...

  16. Optimization of end-pumped, actively Q-switched quasi-III-level lasers.

    Science.gov (United States)

    Jabczynski, Jan K; Gorajek, Lukasz; Kwiatkowski, Jacek; Kaskow, Mateusz; Zendzian, Waldemar

    2011-08-15

    The new model of end-pumped quasi-III-level laser considering transient pumping processes, ground-state-depletion and up-conversion effects was developed. The model consists of two parts: pumping stage and Q-switched part, which can be separated in a case of active Q-switching regime. For pumping stage the semi-analytical model was developed, enabling the calculations for final occupation of upper laser level for given pump power and duration, spatial profile of pump beam, length and dopant level of gain medium. For quasi-stationary inversion, the optimization procedure of Q-switching regime based on Lagrange multiplier technique was developed. The new approach for optimization of CW regime of quasi-three-level lasers was developed to optimize the Q-switched lasers operating with high repetition rates. Both methods of optimizations enable calculation of optimal absorbance of gain medium and output losses for given pump rate. © 2011 Optical Society of America

  17. Self-induced frequency scanning and distributed Bragg reflection in semiconductor lasers with phase-conjugate feedback

    Energy Technology Data Exchange (ETDEWEB)

    Cronin-Golomb; Yariv

    1986-07-01

    A GaA1As semiconductor laser with feedback from a barium titanate photorefractive ring passive phase-conjugate mirror can be made to perform repeating or nonrepeating frequency scans over a 10-nm range toward either the blue or the red. The direction of scanning and whether the scans repeat may be controlled by adjusting the overlap of the interaction beams in the crystal. This overlap region may be adjusted so that the diode frequency spectrum, originally occupying about 10 longitudinal modes, scans and narrows as the conjugate signal builds up, coming to rest often in one, but sometimes two or three, longitudinal modes as a result of self-generated distributed-feedback effects. Also reported similar effects caused by feedback from the total-internal-reflection passive phase-conjugate mirror. The alignment-control mechanism of the ring mirror is, however, not available in this case.

  18. Self-induced frequency scanning and distributed Bragg reflection in semiconductor lasers with phase-conjugate feedback

    Energy Technology Data Exchange (ETDEWEB)

    Cronin-Golomb, M.; Yariv, A.

    1986-07-01

    A GaAlAs semiconductor laser with feedback from a barium titanate photorefractive ring passive phase-conjugate mirror can be made to perform repeating or nonrepeating frequency scans over a 10-nm range toward either the blue or the red. The direction of scanning and whether the scans repeat may be controlled by adjusting the overlap of the interaction beams in the crystal. This overlap region may be adjusted so that the diode frequency spectrum, originally occupying about 10 longitudinal modes, scans and narrows as the conjugate signal builds up, coming to rest often in one, but sometimes two or three, longitudinal modes as a result of self-generated distributed-feedback effects. We also report similar effects caused by feedback from the total-internal-reflection passive phase-conjugate mirror. The alignment-control mechanism of the ring mirror is, however, not available in this case.

  19. Self-induced frequency scanning and distributed bragg reflection in semiconductor lasers with phase-conjugate feedback

    Science.gov (United States)

    Cronin-Golomb, Mark; Yariv, Amnon

    1986-07-01

    A GaAlAs semiconductor laser with feedback from a barium titanate photorefractive ring passive phase-conjugate mirror can be made to perform repeating or nonrepeating frequency scans over a 10-nm range toward either the blue or the red. The direction of scanning and whether the scans repeat may be controlled by adjusting the overlap of the interaction beams in the crystal. This overlap region may be adjusted so that the diode frequency spectrum, originally occupying about 10 longitudinal modes, scans and narrows as the conjugate signal builds up, coming to rest often in one, but sometimes two or three, longitudinal modes as a result of self-generated distributed-feedback effects. We also report similar effects caused by feedback from the total-internal-reflection passive phase-conjugate mirror. The alignment-control mechanism of the ring mirror is, however, not available in this case.

  20. Measurement of laser activated electron tunneling from semiconductor zinc oxide to adsorbed organic molecules by a matrix assisted laser desorption ionization mass spectrometer

    International Nuclear Information System (INIS)

    Zhong Hongying; Fu Jieying; Wang Xiaoli; Zheng Shi

    2012-01-01

    Highlights: ► Irradiation of photons with energies more than the band gap generates electron–hole pairs. ► Electron tunneling probability is dependent on the electron mobility. ► Tunneling electrons are captured by charge deficient atoms. ► Unpaired electrons induce cleavages of chemical bonds. - Abstract: Measurement of light induced heterogeneous electron transfer is important for understanding of fundamental processes involved in chemistry, physics and biology, which is still challenging by current techniques. Laser activated electron tunneling (LAET) from semiconductor metal oxides was observed and characterized by a MALDI (matrix assisted laser desorption ionization) mass spectrometer in this work. Nanoparticles of ZnO were placed on a MALDI sample plate. Free fatty acids and derivatives were used as models of organic compounds and directly deposited on the surface of ZnO nanoparticles. Irradiation of UV laser (λ = 355 nm) with energy more than the band gap of ZnO produces ions that can be detected in negative mode. When TiO 2 nanoparticles with similar band gap but much lower electron mobility were used, these ions were not observed unless the voltage on the sample plate was increased. The experimental results indicate that laser induced electron tunneling is dependent on the electron mobility and the strength of the electric field. Capture of low energy electrons by charge-deficient atoms of adsorbed organic molecules causes unpaired electron-directed cleavages of chemical bonds in a nonergodic pathway. In positive detection mode, electron tunneling cannot be observed due to the reverse moving direction of electrons. It should be able to expect that laser desorption ionization mass spectrometry is a new technique capable of probing the dynamics of electron tunneling. LAET offers advantages as a new ionization dissociation method for mass spectrometry.

  1. Low SWaP Semiconductor Laser Transmitter Modules For ASCENDS Mission Applications

    Science.gov (United States)

    Prasad, Narasimha S.; Rosiewicz, Alex; Coleman, Steven M.

    2012-01-01

    The National Research Council's (NRC) Decadal Survey (DS) of Earth Science and Applications from Space has identified the Active Sensing of CO2 Emissions over Nights, Days, and Seasons (ASCENDS) as an important atmospheric science mission. NASA Langley Research Center, working with its partners, is developing fiber laser architecture based intensity modulated CW laser absorption spectrometer for measuring XCO2 in the 1571 nm spectral band. In support of this measurement, remote sensing of O2 in the 1260 nm spectral band for surface pressure measurements is also being developed. In this paper, we will present recent progress made in the development of advanced transmitter modules for CO2 and O2 sensing. Advanced DFB seed laser modules incorporating low-noise variable laser bias current supply and low-noise variable temperature control circuit have been developed. The 1571 nm modules operate at >80 mW and could be tuned continuously over the wavelength range of 1569-1574nm at a rate of 2 pm/mV. Fine tuning was demonstrated by adjusting the laser drive at a rate of 0.7 pm/mV. Heterodyne linewidth measurements have been performed showing linewidth 200 kHz and frequency jitter 75 MHz. In the case of 1260 nm DFB laser modules, we have shown continuous tuning over a range of 1261.4 - 1262.6 nm by changing chip operating temperature and 1261.0 - 1262.0 nm by changing the laser diode drive level. In addition, we have created a new laser package configuration which has been shown to improve the TEC coefficient of performance by a factor of 5 and improved the overall efficiency of the laser module by a factor of 2.

  2. Stability of period-one (P1) oscillations generated by semiconductor lasers subject to optical injection or optical feedback.

    Science.gov (United States)

    Lin, Lyu-Chih; Liu, Ssu-Hsin; Lin, Fan-Yi

    2017-10-16

    We study the stability of period-one (P1) oscillations experimentally generated by semiconductor lasers subject to optical injection (OI) and by those subject to optical feedback (OF). With unique advantages of broad frequency tuning range and large sideband rejection ratio, P1 oscillations can be useful in applications such as photonic microwave generation, radio-over-fiber communication, and laser Doppler velocimeter. The stability of the P1 oscillations is critical for these applications, which can be affected by spontaneous emission and fluctuations in both temperature and injection current. Although linewidths of P1 oscillations generated by various schemes have been reported, the mechanisms and roles which each of the OI and the OF play have however not been investigated in detail. To characterize the stability of the P1 oscillations generated by the OI and the OF schemes, we measure the linewidths and linewidth reduction ratios (LRRs) of the P1 oscillations. The OF scheme has a narrowest linewidth of 0.21 ± 0.03 MHz compared to 4.7 ± 0.6 MHz in the OI scheme. In the OF scheme, a much larger region of LRRs higher than 90% is also found. The superior stability of the OF scheme is benefited by the fact that the P1 oscillations in the OF scheme are originated from the undamped relaxation oscillation of a single laser and can be phase-locked to one of its external cavity modes, whereas those in the OI scheme come from two independent lasers which bear no phase relation. Moreover, excess P1 linewidth broadening in the OI scheme caused by fluctuation in injection parameters associated with frequency jitter and relative intensity noise (RIN) is also minimized in the OF scheme.

  3. Electronic defect levels in continuous wave laser annealed silicon metal oxide semiconductor devices

    Science.gov (United States)

    Cervera, M.; Garcia, B. J.; Martinez, J.; Garrido, J.; Piqueras, J.

    1988-09-01

    The effect of laser treatment on the bulk and interface states of the Si-SiO2 structure has been investigated. The annealing was performed prior to the gate metallization using a continuous wave Ar+ laser. For low laser powers the interface state density seems to decrease slightly in comparison with untreated samples. However, for the highest irradiating laser powers a new bulk level at 0.41 eV above the valence band with concentrations up to 1015 cm-3 arises probably due to the electrical activation of the oxygen diluted in the Czochralski silicon. Later postmetallization annealings reduce the interface state density to values in the 1010 cm-2 eV-1 range but leave the concentration of the 0.41-eV center nearly unchanged.

  4. Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers

    Directory of Open Access Journals (Sweden)

    Moustafa Ahmed

    2014-01-01

    Full Text Available This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN. We examine the validity of the present noise modeling by comparing the simulated results with the experimental measurements available in literature. We also compare the obtained noise results with those of AlGaAs lasers. Also, we examine the influence of gain suppression on the quantum RIN. In addition, we examine the changes in the RIN level when describing the gain suppression by the case of inhomogeneous spectral broadening. The results show that RIN of the InGaN laser is nearly 9 dB higher than that of the AlGaAs laser.

  5. Optimal operating conditions for external cavity semiconductor laser optical chaos communication system

    International Nuclear Information System (INIS)

    Priyadarshi, S; Pierce, I; Hong, Y; Shore, K A

    2012-01-01

    In optical chaos communications a message is masked in the noise-like broadband output of a chaotic transmitter laser, and message recovery is enabled through the synchronization of the transmitter and the (chaotic) receiver laser. Key issues are to identify the laser operating conditions which provide the highest quality synchronization conditions and those which provide optimized message extraction. In general such operating conditions are not coincident. In this paper numerical simulations are performed with the aim of identifying a regime of operation where the highest quality synchronization and optimizing message extraction efficiency are achieved simultaneously. Use of such an operating regime will facilitate practical deployment of optical chaos communications systems without the need for re-adjustment of laser operating conditions in the field. (paper)

  6. On the mechanisms governing the repetition rate of mode-locked semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mørk, Jesper

    2004-01-01

    We investigate the mechanisms influencing the synchronization locking range of mode-locked lasers. We find that changes in repetition rates can be accomodated through a joint interplay of dispersion and pulse shaping effects....

  7. Packaging-induced failure of semiconductor lasers and optical telecommunications components

    Energy Technology Data Exchange (ETDEWEB)

    Sharps, J.A. [Corning Inc., NY (United States)

    1996-12-31

    Telecommunications equipment for field deployment generally have specified lifetimes of > 100,000 hr. To achieve this high reliability, it is common practice to package sensitive components in hermetic, inert gas environments. The intent is to protect components from particulate and organic contamination, oxidation, and moisture. However, for high power density 980 nm diode lasers used in optical amplifiers, the authors found that hermetic, inert gas packaging induced a failure mode not observed in similar, unpackaged lasers. They refer to this failure mode as packaging-induced failure, or PIF. PIF is caused by nanomole amounts of organic contamination which interact with high intensity 980 nm light to form solid deposits over the emitting regions of the lasers. These deposits absorb 980 nm light, causing heating of the laser, narrowing of the band gap, and eventual thermal runaway. The authors have found PIF is averted by packaging with free O{sub 2} and/or a getter material that sequesters organics.

  8. Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes

    KAUST Repository

    Myzaferi, A.

    2016-08-11

    The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time and temperature of the p-type layers. These design limitations have individually been addressed by using limited area epitaxy (LAE) to block TD glide in n-type AlGaN bottom cladding layers and by using transparent conducting oxide (TCO) top cladding layers to reduce the growth time and temperature of the p-type layers. In addition, a TCO-based top cladding should have significantly lower resistivity than a conventional p-type (Al)GaN top cladding. In this work, LAE and indium-tin-oxide cladding layers are used simultaneously in a (202⎯⎯1) III-nitride laser structure. Lasing was achieved at 446 nm with a threshold current density of 8.5 kA/cm2 and a threshold voltage of 8.4 V.

  9. Short pulse generation in a passively mode-locked photonic crystal semiconductor laser

    DEFF Research Database (Denmark)

    Heuck, Mikkel; Blaaberg, Søren; Mørk, Jesper

    2010-01-01

    We present a new type of passively mode-locked laser with quantum wells embedded in photonic crystal waveguides operating in the slow light regime, which is capable of emitting sub picosecond pulses with widely controllable properties......We present a new type of passively mode-locked laser with quantum wells embedded in photonic crystal waveguides operating in the slow light regime, which is capable of emitting sub picosecond pulses with widely controllable properties...

  10. Phosphorus-free mode-locked semiconductor laser with emission wavelength 1550 nm

    Science.gov (United States)

    Kolodeznyi, E. S.; Novikov, I. I.; Babichev, A. V.; Kurochkin, A. S.; Gladyshev, A. G.; Karachinsky, L. Ya; Gadzhiev, I. M.; Buyalo, M. S.; Usikova, A. A.; Ilynskaya, N. D.; Bougrov, V. E.; Egorov, A. Yu

    2017-11-01

    We have fabricated passive mode-locked laser diodes based on strained InGaAlAs/InGaAs/InP heterostructures with crystal lattice mismatch parameter of +1.0 % between quantum well and barrier. The laser with temperature stabilization at 18 °C was demonstrated 10.027 GHz optical pulse repetition rate with 6 ps pulse duration time. Timing jitter of optical pulses in mode-locked regime was 0.145 ps.

  11. Electronic structure and lattice properties of metastable III-(N,V) semiconductor systems; Elektronische Struktur und Kristallgittereigenschaften von metastabilen III-(N,V)-Halbleitersystemen

    Energy Technology Data Exchange (ETDEWEB)

    Guengerich, M.

    2007-12-18

    This thesis gives an overview of these influences for Ga-V semiconductors (V=P,As,Sb). Lattice vibrations of the ternary alloys Ga(N,P), Ga(N,As) und Ga(N,Sb) are studied and analyzed with respect to the local binding of the N atoms in the host lattices. For the first time, pressure coefficients of the extended host phonons as well as of the N local vibrational modes in Ga(N,As) und Ga(N,P) are determined by Raman spectroscopy under hydrostatic pressure. The relationship between the force constant of the Ga-N bond and the bond length is determined. A central aspect of the thesis is the concentration dependence of optical transitions in Ga(N,P) and Ga(N,As), studied by spectroscopic methods. The impurity levels in both materials are determined by the spatial statistics of the N atoms. (orig.)

  12. Effect of semiconductor GaAs laser irradiation on pain perception in mice

    Energy Technology Data Exchange (ETDEWEB)

    Zarkovic, N.; Manev, H.; Pericic, D.; Skala, K.; Jurin, M.; Persin, A.; Kubovic, M.

    1989-01-01

    The influence of subacute exposure (11 exposures within 16 days) of mice to the low power (GaAs) semiconductive laser-stimulated irradiation on pain perception was investigated. The pain perception was determined by the latency of foot-licking or jumping from the surface of a 53 degrees C hot plate. Repeated hot-plate testing resulted in shortening of latencies in both sham- and laser-irradiated mice. Laser treatment (wavelength, 905 nm; frequency, 256 Hz; irradiation time, 50 sec; pulse duration, 100 nsec; distance, 3 cm; peak irradiance, 50 W/cm2 in irradiated area; and total exposure, 0.41 mJ/cm2) induced further shortening of latencies, suggesting its stimulatory influence on pain perception. Administration of morphine (20 mg/kg) prolonged the latency of response to the hot plate in both sham- and laser-irradiated mice. This prolongation tended to be lesser in laser-irradiated animals. Further investigations are required to elucidate the mechanism of the observed effect of laser.

  13. Weak antilocalization induced by Rashba spin-orbit interaction in layered III-VI compound semiconductor GaSe thin films

    Science.gov (United States)

    Takasuna, Shoichi; Shiogai, Junichi; Matsuzaka, Shunichiro; Kohda, Makoto; Oyama, Yutaka; Nitta, Junsaku

    2017-10-01

    Magnetoconductance (MC) at low temperature was measured to investigate spin-related transport affected by spin-orbit interaction (SOI) in III-VI compound n -type GaSe thin films. Results reveal that MC shows weak antilocalization (WAL). Its temperature and gate voltage dependences reveal that the dominant spin relaxation is governed by the D'yakonov-Perel' mechanism associated with the Rashba SOI. The estimated Rashba SOI strength in GaSe is much stronger than that of III-V compound GaAs quantum wells, although the energy gap and spin split-off band in GaSe closely resemble those in GaAs. The angle dependence of WAL amplitude in the in-plane magnetic field direction is almost isotropic. This isotropy indicates that the strength of the Dresselhaus SOI is negligible compared with the Rashba SOI strength. The SOI effect in n -GaSe thin films differs greatly from those of III-V compound semiconductors and transition-metal dichalcogenides.

  14. Time-resolved studies at PETRA III with a highly repetitive synchronized laser system

    Energy Technology Data Exchange (ETDEWEB)

    Schlie, Mortiz

    2013-09-15

    Atomic and molecular processes can nowadays be directly followed in the time domain. This is a core technique for a better understanding of the involved fundamental physics, thus auguring new applications in the future as well. Usually the so-called pump-probe technique making use of two synchronized ultrashort light pulses is utilized to obtain this time-resolved data. In this work, the development and characterization of a synchronization system enabling such pump-probe studies at the storage ring PETRA III in combination with an external, then synchronized fs-laser system is described. The synchronization is based on an extended PLL approach with three interconnected feedback loops allowing to monitor short-time losses of the lock and thus prevent them. This way, the jitter between the laser PHAROS and the PETRA III reference signal is reduced to {sigma} <5 ps. Thus the system allows to conduct experiments at a repetition rate of 130 kHz with a temporal resolution limited only by the X-ray pulse length. A major emphasis in the fundamental introductory chapters is an intuitive explanation of the basic principles of phase locked loops and the different aspects of phase noise to allow a deeper understanding of the synchronization. Furthermore, first pump-probe experiments conducted at different beamlines at PETRA III are presented, demonstrating the usability of the laser system in a scientific environment as well. In first characterizing experiments the pulse duration of PETRA III X-ray pulses has been measured to be 90 ps FWHM. In particular, there have been time resolved X-ray absorption spectroscopy experiments on Gaq3 and Znq2 conducted at beamline P11. First results show dynamics of the electronic excitation on the timescale of a few hundred pico seconds up to a few nano seconds and provide a basic understanding for further research on those molecules. For Gaq3 this data is analyzed in detail and compared with visible fluorescence measurements suggesting at

  15. Time-resolved studies at PETRA III with a highly repetitive synchronized laser system

    International Nuclear Information System (INIS)

    Schlie, Mortiz

    2013-09-01

    Atomic and molecular processes can nowadays be directly followed in the time domain. This is a core technique for a better understanding of the involved fundamental physics, thus auguring new applications in the future as well. Usually the so-called pump-probe technique making use of two synchronized ultrashort light pulses is utilized to obtain this time-resolved data. In this work, the development and characterization of a synchronization system enabling such pump-probe studies at the storage ring PETRA III in combination with an external, then synchronized fs-laser system is described. The synchronization is based on an extended PLL approach with three interconnected feedback loops allowing to monitor short-time losses of the lock and thus prevent them. This way, the jitter between the laser PHAROS and the PETRA III reference signal is reduced to σ <5 ps. Thus the system allows to conduct experiments at a repetition rate of 130 kHz with a temporal resolution limited only by the X-ray pulse length. A major emphasis in the fundamental introductory chapters is an intuitive explanation of the basic principles of phase locked loops and the different aspects of phase noise to allow a deeper understanding of the synchronization. Furthermore, first pump-probe experiments conducted at different beamlines at PETRA III are presented, demonstrating the usability of the laser system in a scientific environment as well. In first characterizing experiments the pulse duration of PETRA III X-ray pulses has been measured to be 90 ps FWHM. In particular, there have been time resolved X-ray absorption spectroscopy experiments on Gaq3 and Znq2 conducted at beamline P11. First results show dynamics of the electronic excitation on the timescale of a few hundred pico seconds up to a few nano seconds and provide a basic understanding for further research on those molecules. For Gaq3 this data is analyzed in detail and compared with visible fluorescence measurements suggesting at least

  16. Layer-by-layer modification of thin-film metal-semiconductor multilayers with ultrashort laser pulses

    Science.gov (United States)

    Romashevskiy, S. A.; Tsygankov, P. A.; Ashitkov, S. I.; Agranat, M. B.

    2018-05-01

    The surface modifications in a multilayer thin-film structure (50-nm alternating layers of Si and Al) induced by a single Gaussian-shaped femtosecond laser pulse (350 fs, 1028 nm) in the air are investigated by means of atomic-force microscopy (AFM), scanning electron microscopy (SEM), and optical microscopy (OM). Depending on the laser fluence, various modifications of nanometer-scale metal and semiconductor layers, including localized formation of silicon/aluminum nanofoams and layer-by-layer removal, are found. While the nanofoams with cell sizes in the range of tens to hundreds of nanometers are produced only in the two top layers, layer-by-layer removal is observed for the four top layers under single pulse irradiation. The 50-nm films of the multilayer structure are found to be separated at their interfaces, resulting in a selective removal of several top layers (up to 4) in the form of step-like (concentric) craters. The observed phenomenon is associated with a thermo-mechanical ablation mechanism that results in splitting off at film-film interface, where the adhesion force is less than the bulk strength of the used materials, revealing linear dependence of threshold fluences on the film thickness.

  17. Nonvolatile memory characteristics in metal-oxide-semiconductors containing metal nanoparticles fabricated by using a unique laser irradiation method

    International Nuclear Information System (INIS)

    Yang, JungYup; Yoon, KapSoo; Kim, JuHyung; Choi, WonJun; Do, YoungHo; Kim, ChaeOk; Hong, JinPyo

    2006-01-01

    Metal-oxide-semiconductor (MOS) capacitors with metal nanoparticles (Co NP) were successfully fabricated by utilizing an external laser exposure technique for application of non-volatile memories. Images of high-resolution transmission electron microscopy reveal that the spherically shaped Co NP are clearly embedded in the gate oxide layer. Capacitance-voltage measurements exhibit typical charging and discharging effects with a large flat-band shift. The effects of the tunnel oxide thickness and the different tunnel materials are analyzed using capacitance-voltage and retention characteristics. In addition, the memory characteristics of the NP embedded in a high-permittivity material are investigated because the thickness of conventionally available SiO 2 gates is approaching the quantum tunneling limit as devices are scaled down. Finally, the suitability of NP memory devices for nonvolatile memory applications is also discussed. The present results suggest that our unique laser exposure technique holds promise for the NP formation as floating gate elements in nonvolatile NP memories and that the quality of the tunnel oxide is very important for enhancing the retention properties of nonvolatile memory.

  18. Density Functional Theory Simulations of Semiconductors for Photovoltaic Applications: Hybrid Organic-Inorganic Perovskites and III/V Heterostructures

    Directory of Open Access Journals (Sweden)

    Jacky Even

    2014-01-01

    Full Text Available Potentialities of density functional theory (DFT based methodologies are explored for photovoltaic materials through the modeling of the structural and optoelectronic properties of semiconductor hybrid organic-inorganic perovskites and GaAs/GaP heterostructures. They show how the properties of these bulk materials, as well as atomistic relaxations, interfaces, and electronic band-lineups in small heterostructures, can be thoroughly investigated. Some limitations of available standard DFT codes are discussed. Recent improvements able to treat many-body effects or based on density-functional perturbation theory are also reviewed in the context of issues relevant to photovoltaic technologies.

  19. III-nitride Photonic Integrated Circuit: Multi-section GaN Laser Diodes for Smart Lighting and Visible Light Communication

    KAUST Repository

    Shen, Chao

    2017-04-01

    The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) and laser diodes (LDs), for smart lighting, visible-light communication (VLC), optical storage, and internet-of-things. Recent studies suggested that the GaN-based LDs, which is free from efficiency droop, outperform LEDs as a viable high-power light source. Conventionally, the InGaN-based LDs are grown on polar, c-plane GaN substrates. However, a relatively low differential gain limited the device performance due to a significant polarization field in the active region. Therefore, the LDs grown on nonpolar m-plane and semipolar (2021)-plane GaN substrates are posed to deliver high-efficiency owing to the entirely or partially eliminated polarization field. To date, the smart lighting and VLC functionalities have been demonstrated based on discrete devices, such as LDs, transverse-transmission modulators, and waveguide photodetectors. The integration of III-nitride photonic components, including the light emitter, modulator, absorber, amplifier, and photodetector, towards the realization of III-nitride photonic integrated circuit (PIC) offers the advantages of small-footprint, high-speed, and low power consumption, which has yet to be investigated. This dissertation presents the design, fabrication, and characterization of the multi-section InGaN laser diodes with integrated functionalities on semipolar (2021)-plane GaN substrates for enabling such photonic integration. The blue-emitting integrated waveguide modulator-laser diode (IWM-LD) exhibits a high modulation efficiency of 2.68 dB/V. A large extinction ratio of 11.3 dB is measured in the violet-emitting IWM-LD. Utilizing an integrated absorber, a high optical power (250mW), droop-free, speckle-free, and large modulation bandwidth (560MHz) blue-emitting superluminescent diode is reported. An integrated short-wavelength semiconductor optical amplifier with the laser diode at ~404 nm is demonstrated with a large gain of 5

  20. Electronic properties of III-nitride semiconductors: A first-principles investigation using the Tran-Blaha modified Becke-Johnson potential

    International Nuclear Information System (INIS)

    Araujo, Rafael B.; Almeida, J. S. de; Ferreira da Silva, A.

    2013-01-01

    In this work, we use density functional theory to investigate the influence of semilocal exchange and correlation effects on the electronic properties of III-nitride semiconductors considering zinc-blende and wurtzite crystal structures. We find that the inclusion of such effects through the use of the Tran-Blaha modified Becke-Johnson potential yields an excellent description of the electronic structures of these materials giving energy band gaps which are systematically larger than the ones obtained with standard functionals such as the generalized gradient approximation. The discrepancy between the experimental and theoretical band gaps is then significantly reduced with semilocal exchange and correlation effects. However, the effective masses are overestimated in the zinc-blende nitrides, but no systematic trend is found in the wurtzite compounds. New results for energy band gaps and effective masses of zinc-blende and wurtzite indium nitrides are presented

  1. Phase-coherent transport and spin-orbit-coupling in III/V-semiconductor nanowires; Phasenkohaerenter Transport und Spin-Bahn-Wechselwirkung in III/V-Halbleiternanodraehten

    Energy Technology Data Exchange (ETDEWEB)

    Estevez Hernandez, Sergio

    2009-10-16

    Semiconductor nanowires fabricated by a bottom-up approach are not only interesting for the realization of future nanoscaled devices but also appear to be very attractive model systems to tackle fundamental questions concerning the transport in strongly confined systems. In order to avoid the problem connected with carrier depletion, narrowband gap semiconductors, i.e., InAs or InN, or core-shell Nanowires, i.e., GaAs/AlGaAs, are preferred. The underlying reason is that in InAs or InN the Fermi-level pinning in the conduction band results in a carrier accumulation at the surface. In fact, the tubular topology of the surface electron gas opens up the possibility to observe unconventional quantum transport phenomena. When the phase-coherence length in the nanowire is comparable to its dimensions the conductance fluctuates if a magnetic field is applied or if the electron concentration is changed by means of a gate electrode. These so-called universal conductance fluctuations being in the order of e{sup 2}/h originate from the fact that in small disordered samples, electron interference effects are not averaged out. In this work are analyzed universal conductance fluctuations to study the quantum transport properties in InN, InAs and GaAs/AlGaAs nanowires. With the use of a magnetic field and a back-gate electrode the universal conductance fluctuations and localizations effects were analyzed. Since InN and InAs are narrow band gap semiconductors, one naturally expects spin-orbit coupling effects. Because this phenomena is of importance for spin electronic applications. However, owing to the cylindrical symmetry of the InN and InAs nanowires, the latter effect was observable and actually be used to determine the strength of spin-orbit coupling. In order to clearly separate the weak antilocalization effect from the conductance fluctuations, the averaging of the magnetoconductance at different gate voltages was essential. The low-temperature quantum transport properties

  2. All-optical NRZ-to-RZ data format conversion with optically injected laser diode or semiconductor optical amplifier

    Science.gov (United States)

    Lin, Gong-Ru; Chang, Yung-Cheng; Yu, Kun-Chieh

    2006-09-01

    By injecting the optical NRZ data into a Fabry-Perot laser diode (FPLD) synchronously modulated at below threshold condition or a semiconductor optical amplifier (SOA) gain-depleted with a backward injected clock stream, the all-optical non-return to zero (NRZ) to return-to-zero (RZ) format conversion of a STM-64 date-stream for synchronous digital hierarchy (SDH) or an OC-192 data stream for synchronous optical network (SONET) in high-speed fiber-optic communication link can be performed. Without the assistance of any complicated RF electronic circuitry, the output RZ data-stream at bit rate of up to 10 Gbit/s is successfully transformed in the optically NRZ injection-locked FPLD, in which the incoming NRZ data induces gain-switching of the FPLD without DC driving current or at below threshold condition. A power penalty of 1.2 dB is measured after NRZ-to-RZ transformation in the FPLD. Alternatively, the all-optical 10Gbits/s NRZ-to-RZ format conversion can also be demonstrated in a semiconductor optical amplifier under a backward dark-optical-comb injection with its duty-cycle 70%, which is obtained by reshaping from the received data clock at 10 GHz. The incoming optical NRZ data-stream is transformed into a pulsed RZ data-stream with its duty-cycle, rms timing jitter, and conversion gain of 15%, 4ps, and 3dB, respectively. In contrast to the FPLD, the SOA based NRZ-to-RZ converter exhibits an enhanced extinction ratio from 7 to 13 dB, and BER of 10 -13 at -18.5 dBm. In particular, the power penalty of the received RZ data-stream has greatly improved by 5 dB as compared to that obtained from FPLD.

  3. UV laser drilling of SiC for semiconductor device fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Krueger, Olaf; Schoene, Gerd; Wernicke, Tim; John, Wilfred; Wuerfl, Joachim; Traenkle, Guenther [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2007-04-15

    Pulsed UV laser processing is used to drill micro holes in silicon carbide (SiC) wafers supporting AlGaN/GaN transistor structures. Direct laser ablation using nanosecond pulses has been proven to provide an efficient way to create through and blind holes in 400 {mu}m thick SiC. When drilling through, openings in the front pads are formed, while blind holes stop {approx}40 {mu}m before the backside and were advanced to the electrical contact pad by subsequent plasma etching without an additional mask. Low induction connections (vias) between the transistor's source pads and the ground on the backside were formed by metallization of the holes. Micro vias having aspect ratios of 5-6 have been processed in 400 {mu}m SiC. The process flow from wafer layout to laser drilling is available including an automated beam alignment that allows a positioning accuracy of {+-}1 {mu}m with respect to existing patterns on the wafer. As proven by electrical dc and rf measurements the laser-assisted via technologies have successfully been implemented into fabrication of AlGaN/GaN high-power transistors.

  4. Semiconductor Deposition and Etching Interactions of Laser-Generated Translationally Hot Atoms and Radicals

    Science.gov (United States)

    1991-05-01

    fluorescence," J. Chem. Phys. 86, 6731 (1987). J. E. Smedley , H. K. Haugen and S. R. Leone, "Collision-induced dissociation of laser- excited Br 2 [B3Fl(Ou... Robert J. Levis, postdoc, presently Assistant Professor of Chemistry, Wayne State University. Lisa M. Cousins, graduate student, Ph.D. 1989, presently

  5. Theory and experiment of laterally coupled multi-longitudinal-mode semiconductor lasers

    NARCIS (Netherlands)

    Lenstra, D.; Yousefi, M.; Barsella, A.; Morthier, G.; Baets, R.G.F.; McMurtry, S.; Vilcot, J.-P.

    2003-01-01

    This report presents simulations and measurements of multimode dynamics in the twin-stripe laser resulting from complicated gain competition effects. The theory is based on a novel multi-longitudinal rate equations model, while accounting for both coherent and incoherent lateral coupling between the

  6. Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser

    Science.gov (United States)

    Grave, I.; Kan, S. C.; Griffel, G.; Wu, S. W.; Sa'Ar, A.

    1991-01-01

    A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two-state optical memory is demonstrated.

  7. Photo-Machining of Semiconductor Related Materials with Femtosecond Laser Ablation and Characterization of Its Properties

    Science.gov (United States)

    Yokotani, Atushi; Mizuno, Toshio; Mukumoto, Toru; Kawahara, Kousuke; Ninomiya, Takahumi; Sawada, Hiroshi; Kurosawa, Kou

    We have analyzed the drilling process with femtosecond laser on the silicon surface in order to investigate a degree of thermal effect during the dicing process of the very thin silicon substrate. A regenerative amplified Ti:Al2O3 laser (E= 30˜500 μJ/pulse, τ= 200 fs, λ= 780 nm, f= 10 Hz) was used and focused onto a 50 μm-thick silicon sample. ICCD (Intensified Charge coupled Device) camera with a high-speed gate of 5 ns was utilized to take images of processing hole. First, we investigated the dependence of laser energy on the speed of the formation of the drilled hole. As a result, it was found that the lager the energy, the slower the speed of the formation under the minimum hole was obtained. Consequently, in the case of defocused condition, even when the smaller the energy density was used, the very slow speed of formation and the much lager thermal effects are simultaneously observed. So we can say that the degree of the thermal effects is not simply related to energy density of the laser but strongly related to the speed of the formation, which can be measured by the ICCD camera. The similar tendency was also obtained for other materials, which are important for the fabrication of ICs (Al, Cu, SiO2 and acrylic resin).

  8. Transient changes of optical properties in semiconductors in response to femtosecond laser pulses

    Czech Academy of Sciences Publication Activity Database

    Tkachenko, V.; Medvedev, Nikita; Ziaja, B.

    2016-01-01

    Roč. 6, č. 9 (2016), 1-12, č. článku 238. ISSN 2076-3417 Institutional support: RVO:68378271 Keywords : free-electron lasers * transient optical properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.679, year: 2016

  9. Stabilization of the Absolute Frequency and Phase of a Compact, Low Jitter Modelocked Semiconductor Diode Laser

    National Research Council Canada - National Science Library

    Delfyett, Peter J., Jr

    2005-01-01

    .... This work represents, to our knowledge, the first stabilized modelocked diode laser using PDH that achieves both supermode elimination and optical frequency comb stabilization. The resulting optical comb source may be useful for advanced RF imaging radar for optical sampling in ADC or in novel waveform generation (DAC's).

  10. Fabrication and characterization of semiconductor lasers of Pb1-x Snx Te

    International Nuclear Information System (INIS)

    Abramof, E.; Ferreira, S.O.; Bandeira, I.N.

    1987-07-01

    The fabrication and characterization of PbTe homostructure diode-lasers are described. The threshold current density is in the range between 2.5 and 10 KA/cm 2 and the factors that lead to the device degradation are discussed. (author) [pt

  11. Study and characterization of semi-conductor materials III-V for their applications to the ionizing radiation detection

    International Nuclear Information System (INIS)

    Moulin, H.

    1989-01-01

    This work is the study of photoconduction in volume of gallium arsenide and of indium phosphide doped with iron for their applications to X-ray detection which is carried out directly in the material. After having recalled the physical characterization of materials and the principle of photoconduction, we describe two informatic simulations. The first supposes the spatial uniformity of the electric field on the semiconductor, the second takes the spatial and temporal variations of the field into consideration. Then we show the advantage of a first irradiation to neutrons of the photoconductors. With the gallium arsenide there is swiftness improvement of the detectors to the detriment of the sensitivity. The second part studies first the characterizations in the obscurity of the photoconductors according to the electric polarization field and to the neutron dose they received before and then their characterizations under X radiation. 77 refs., 221 figs., 33 tabs., 6 photos., 3 annexes

  12. Study and characterization of the III-V semiconductor materials for applications in the detection of ionizing radiation

    International Nuclear Information System (INIS)

    Moulin, H.

    1989-11-01

    The photoconduction in the bulk of the gallium arsenide (GaAs) and of the indium phosphide doped with iron (InP:Fe) is investigated. These compounds are to be applied in devices for X-ray detection. In such semiconductor materials the detection of X-rays occurs in the bulk. The photoconduction theory and the characteristics of the materials are reviewed. Two computerized simulation models for studying the response of the photoconductors to the radiation pulses are described. The results concerning the following measurements are presented: the characterization of GaAs and InP:Fe photoconductors, in obscurity, as a function of the electric field of polarization and of the neutrons dose; and their characterization under X-ray radiation [fr

  13. Selective laser-induced photochemical dry etching of semiconductors controlled by ion-bombardment-induced damage

    International Nuclear Information System (INIS)

    Ashby, C.I.H.; Myers, D.R.; Vook, F.L.

    1987-01-01

    When a photochemical dry etching process requires direct participation of photogenerated carriers in the chemical reaction, it is sensitive to the electronic properties of the semiconductor. For such solid-excitation-based dry etching processes, the balance between reaction and carrier recombination rates determines the practical utility of a particular reaction for device fabrication. The distance from the surface at which the photocarriers are generated by light adsorption is determined by the absorption coefficient. In the absence of an external bias potential, only those carriers formed within a diffusion length of the surface space-charge region will have an opportunity to drive the dry etching reaction. When the absorption coefficient is high, most of the photons generate carriers within a diffusion length from the surface space-charge region, and the etching rate is largely determined by the balance between the rate of the carrier-driven reaction and the surface recombination velocity. When the recombination rate of free carriers in the bulk of the semiconductor is high, the effective diffusion length is reduced and fewer of the carriers generated in the subsurface region ever reach the surface. An important effect of ion bombardment is the creation of many lattice defects that increase the rate of recombination of electrons and holes. When a sufficient number of defects, which act as recombination sites, are formed during ion implantation, the recombination of photogenerated carriers at these defects in the subsurface region can greatly reduce the number of carriers which can reach the surface and drive a photochemical etching reaction

  14. Trialkylphosphine-stabilized copper(I) gallium(III) phenylchalcogenolate complexes: crystal structures and generation of ternary semiconductors by thermolysis.

    Science.gov (United States)

    Kluge, Oliver; Krautscheid, Harald

    2012-06-18

    A series of organometallic trialkylphosphine-stabilized copper gallium phenylchalcogenolate complexes [(R(3)P)(m)Cu(n)Me(2-x)Ga(EPh)(n+x+1)] (R = Me, Et, (i)Pr, (t)Bu; E = S, Se, Te; x = 0, 1) has been prepared and structurally characterized by X-ray diffraction. From their molecular structures three groups of compounds can be distinguished: ionic compounds, ring systems, and cage structures. All these complexes contain one gallium atom bound to one or two methyl groups, whereas the number of copper atoms, and therefore the nuclearity of the complexes, is variable and depends mainly on size and amount of phosphine ligand used in synthesis. The Ga-E bonds are relatively rigid, in contrast to flexible Cu-E bonds. The lengths of the latter are controlled by the coordination number and steric influences. The Ga-E bond lengths depend systematically on the number of methyl groups bound to the gallium atom, with somewhat shorter bonds in monomethyl compounds compared to dimethyl compounds. Quantum chemical computations reproduce this trend and show furthermore that the rotation of one phenyl group around the Ga-E bond is a low energy process with two distinct minima, corresponding to two different conformations found experimentally. Mixtures of different types of chalcogen atoms on molecular scale are possible, and then ligand exchange reactions in solution lead to mixed site occupation. In thermogravimetric studies the complexes were converted into the ternary semiconductors CuGaE(2). The thermolysis reaction is completed at temperatures between 250 and 400 °C, typically with lower temperatures for the heavier chalcogens. Because of significant release of Me(3)Ga during the thermolysis process, and especially in case of copper excess in the precursor complexes, binary copper chalcogenides are obtained as additional thermolysis products. Quaternary semiconductors can be obtained from mixed chalcogen precursors.

  15. Epitaxial III-V nanowires on silicon for vertical devices

    NARCIS (Netherlands)

    Bakkers, E.P.A.M.; Borgström, M.T.; Einden, Van Den W.; Weert, van M.H.M.; Helman, A.; Verheijen, M.A.

    2006-01-01

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the Vapor-Liquid-Solid (VLS) mechanism with laser ablation as well as metal organic vapor phase epitaxy. The VLS growth enables the fabrication of complex axial and radial

  16. Structure, stability properties, and nonlinear dynamics of lateral modes of a broad area semiconductor laser

    DEFF Research Database (Denmark)

    Blaaberg, Søren

    2007-01-01

    Bred-areal halvlederlasere er kompakte lasere designet til at levere høj udgangseffekt (>1 Watt). Den høje effekt opnås ved at gøre laserens aktive område bredt (>100 mikrometer) samt laserspejlene endnu bredere. I det aktive område pumpes laseren elektrisk. Langs laserens ene tværstillede akse l...

  17. High brightness photonic band crystal semiconductor lasers in the passive mode locking regime

    Energy Technology Data Exchange (ETDEWEB)

    Rosales, R.; Kalosha, V. P.; Miah, M. J.; Bimberg, D. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany); Posilović, K. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany); PBC Lasers GmbH, Hardenbergstrasse 36, 10623 Berlin (Germany); Pohl, J.; Weyers, M. [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489 (Germany)

    2014-10-20

    High brightness photonic band crystal lasers in the passive mode locking regime are presented. Optical pulses with peak power of 3 W and peak brightness of about 180 MW cm{sup −2} sr{sup −1} are obtained on a 5 GHz device exhibiting 15 ps pulses and a very low beam divergence in both the vertical and horizontal directions.

  18. High brightness photonic band crystal semiconductor lasers in the passive mode locking regime

    International Nuclear Information System (INIS)

    Rosales, R.; Kalosha, V. P.; Miah, M. J.; Bimberg, D.; Posilović, K.; Pohl, J.; Weyers, M.

    2014-01-01

    High brightness photonic band crystal lasers in the passive mode locking regime are presented. Optical pulses with peak power of 3 W and peak brightness of about 180 MW cm −2  sr −1 are obtained on a 5 GHz device exhibiting 15 ps pulses and a very low beam divergence in both the vertical and horizontal directions.

  19. Quantum-dot temperature profiles during laser irradiation for semiconductor-doped glasses

    International Nuclear Information System (INIS)

    Nagpal, Swati

    2002-01-01

    Temperature profiles around laser irradiated CdX (X=S, Se, and Te) quantum dots in borosilicate glasses were theoretically modeled. Initially the quantum dots heat up rapidly, followed by a gradual increase of temperature. Also it is found that larger dots reach higher temperatures for the same pulse characteristics. After the pulse is turned off, the dots initially cool rapidly, followed by a gradual decrease in temperature

  20. Quantum-dot temperature profiles during laser irradiation for semiconductor-doped glasses

    Science.gov (United States)

    Nagpal, Swati

    2002-12-01

    Temperature profiles around laser irradiated CdX (X=S, Se, and Te) quantum dots in borosilicate glasses were theoretically modeled. Initially the quantum dots heat up rapidly, followed by a gradual increase of temperature. Also it is found that larger dots reach higher temperatures for the same pulse characteristics. After the pulse is turned off, the dots initially cool rapidly, followed by a gradual decrease in temperature.

  1. Generalized bipolariton model. propagation of a ultrashort laser pulse through a thin semiconductor film in the conditions of two-photon generation of biexcitons

    International Nuclear Information System (INIS)

    Igor Beloussov

    2013-01-01

    A generalized bipolariton model is proposed. Bipolaritons is formed from virtual excitons of four kinds. There exists both attractive and repulsive interaction between these excitons, though only excitons of a specific type can interact with light. A substantial difference between conventional and our models is shown for the case of nonlinear transmission/reflection of ultrashort laser pulses by a thin semiconductor film under two-photon generation of biexcitons. (author)

  2. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  3. Liquid detection with InGaAsP semiconductor lasers having multiple short external cavities.

    Science.gov (United States)

    Zhu, X; Cassidy, D T

    1996-08-20

    A liquid detection system consisting of a diode laser with multiple short external cavities (MSXC's) is reported. The MSXC diode laser operates single mode on one of 18 distinct modes that span a range of 72 nm. We selected the modes by setting the length of one of the external cavities using a piezoelectric positioner. One can measure the transmission through cells by modulating the injection current at audio frequencies and using phase-sensitive detection to reject the ambient light and reduce 1/f noise. A method to determine regions of single-mode operation by the rms of the output of the laser is described. The transmission data were processed by multivariate calibration techniques, i.e., partial least squares and principal component regression. Water concentration in acetone was used to demonstrate the performance of the system. A correlation coefficient of R(2) = 0.997 and 0.29% root-mean-square error of prediction are found for water concentration over the range of 2-19%.

  4. Laser isotope purification of lead for use in semiconductor chip interconnects

    International Nuclear Information System (INIS)

    Scheibner, K.; Haynam, C.; Worden, E.; Esser, B.

    1996-01-01

    Lead, used throughout the electronics industries, typically contains small amounts of radioactive 210 Pb (a daughter product of the planets ubiquitous 238 U) whose 210 Po daughter emits an α-particle that is known to cause soft errors in electronic circuits. The 210 Pb is not separable by chemical means. This paper describes the generic Atomic Vapor Laser Isotope Separation (AVLIS) process developed at the Lawrence Livermore National Laboratory (LLNL) over the last 20 years, with particular emphasis on recent efforts to develop the process physics and component technologies required to remove the offending 210 Pb using lasers. We have constructed a developmental facility that includes a process laser development area and a test bed for the vaporizer and ion and product collectors. We will be testing much of the equipment and demonstrating pilot scale AVLIS on a surrogate material later this year. Detection of the very low alpha emission even from commercially available low-alpha lead is challenging. LLNL's detection capabilities will be described. The goal of the development of lead purification technology is to demonstrate the capability in FY97, and to deploy a production machine capable of up to several MT/y of isotopically purified material, possible beginning in FY98

  5. The danger of semiconductor laser diode radiation to the human eye

    International Nuclear Information System (INIS)

    Nier, J.

    1977-01-01

    The UVV 'Laserstrahlen' (laser beam regulation) sets maximum permissible values for radiation exposure that must not be exceeded on the cornea or skin (wavelength range 200 to 1400nm; cornea values: Normal pulsed operation 5 x 10 -7 Ws/cm 2 , continuous operation (>0.1s)5 x 10 -6 W/cm 2 ). Especially laser diodes emitting in the near infrared invite careless handling, of which this paper warns by a detailed illustration of the danger involved and by numerical examples. Data are given on two commercial laser diodes, a continuous operation diode (continuous power 5mW) and a pulse diode (peak pwer 1W, pulse duration 0.2μs), as well as data on aperture angles and geometrical dimensions. Critical cornea and skin distances are distinguished below which the exposure of cornea and skin in the axis of the emission beam is dangerous. For the unfavourable conditions of focussing with a lens (f = 4cm), the following critical cornea distances are obtained: Continuous diode 2.5 km; pulse diode 23.5m. Calculation formulas for special cases are given. (orig.) 891 MG [de

  6. Use of a reflective semiconductor optical amplifier and dual-ring architecture design to produce a stable multi-wavelength fiber laser

    International Nuclear Information System (INIS)

    Yeh, Chien-Hung; Chow, Chi-Wai; Lu, Shao-Sheng

    2014-01-01

    In this work, we propose and demonstrate a multi-wavelength laser source produced by utilizing a C-band reflective semiconductor optical amplifier (RSOA) with a dual-ring fiber cavity. Here, the laser cavity consists of an RSOA, a 1 × 2 optical coupler, a 2 × 2 optical coupler and a polarization controller. As a result, thirteen to eighteen wavelengths around the L band could be generated simultaneously when the bias current of the C-band RSOA was driven at 30–70 mA. In addition, the output stabilities of the power and wavelength are also discussed. (paper)

  7. Use of a reflective semiconductor optical amplifier and dual-ring architecture design to produce a stable multi-wavelength fiber laser

    Science.gov (United States)

    Yeh, Chien-Hung; Chow, Chi-Wai; Lu, Shao-Sheng

    2014-05-01

    In this work, we propose and demonstrate a multi-wavelength laser source produced by utilizing a C-band reflective semiconductor optical amplifier (RSOA) with a dual-ring fiber cavity. Here, the laser cavity consists of an RSOA, a 1 × 2 optical coupler, a 2 × 2 optical coupler and a polarization controller. As a result, thirteen to eighteen wavelengths around the L band could be generated simultaneously when the bias current of the C-band RSOA was driven at 30-70 mA. In addition, the output stabilities of the power and wavelength are also discussed.

  8. Flight demonstration of flight termination system and solid rocket motor ignition using semiconductor laser initiated ordnance

    Science.gov (United States)

    Schulze, Norman R.; Maxfield, B.; Boucher, C.

    1995-01-01

    Solid State Laser Initiated Ordnance (LIO) offers new technology having potential for enhanced safety, reduced costs, and improved operational efficiency. Concerns over the absence of programmatic applications of the technology, which has prevented acceptance by flight programs, should be abated since LIO has now been operationally implemented by the Laser Initiated Ordnance Sounding Rocket Demonstration (LOSRD) Program. The first launch of solid state laser diode LIO at the NASA Wallops Flight Facility (WFF) occurred on March 15, 1995 with all mission objectives accomplished. This project, Phase 3 of a series of three NASA Headquarters LIO demonstration initiatives, accomplished its objective by the flight of a dedicated, all-LIO sounding rocket mission using a two-stage Nike-Orion launch vehicle. LIO flight hardware, made by The Ensign-Bickford Company under NASA's first Cooperative Agreement with Profit Making Organizations, safely initiated three demanding pyrotechnic sequence events, namely, solid rocket motor ignition from the ground and in flight, and flight termination, i.e., as a Flight Termination System (FTS). A flight LIO system was designed, built, tested, and flown to support the objectives of quickly and inexpensively putting LIO through ground and flight operational paces. The hardware was fully qualified for this mission, including component testing as well as a full-scale system test. The launch accomplished all mission objectives in less than 11 months from proposal receipt. This paper concentrates on accomplishments of the ordnance aspects of the program and on the program's implementation and results. While this program does not generically qualify LIO for all applications, it demonstrated the safety, technical, and operational feasibility of those two most demanding applications, using an all solid state safe and arm system in critical flight applications.

  9. Time delay signature elimination of chaos in a semiconductor laser by dispersive feedback from a chirped FBG.

    Science.gov (United States)

    Wang, Daming; Wang, Longsheng; Zhao, Tong; Gao, Hua; Wang, Yuncai; Chen, Xianfeng; Wang, Anbang

    2017-05-15

    Time delay signature (TDS) of a semiconductor laser subject to dispersive optical feedback from a chirped fibre Bragg grating (CFBG) is investigated experimentally and numerically. Different from mirror, CFBG provides additional frequency-dependent delay caused by dispersion, and thus induces external-cavity modes with irregular mode separation rather than a fixed separation induced by mirror feedback. Compared with mirror feedback, the CFBG feedback can greatly depress and even eliminate the TDS, although it leads to a similar quasi-period route to chaos with increases of feedback. In experiments, by using a CFBG with dispersion of 2000ps/nm, the TDS is decreased by 90% to about 0.04 compared with mirror feedback. Furthermore, both numerical and experimental results show that the TDS evolution is quite different: the TDS decreases more quickly down to a lower plateau (even background noise level of autocorrelation function) and never rises again. This evolution tendency is also different from that of FBG feedback, of which the TDS first decreases to a minimal value and then increases again as feedback strength increases. In addition, the CFBG feedback has no filtering effects and does not require amplification for feedback light.

  10. Development of Prototype Micro-Lidar using Narrow Linewidth Semiconductor Lasers for Mars Boundary Layer Wind and Dust Opacity Profiles

    Science.gov (United States)

    Menzies, Robert T.; Cardell, Greg; Chiao, Meng; Esproles, Carlos; Forouhar, Siamak; Hemmati, Hamid; Tratt, David

    1999-01-01

    We have developed a compact Doppler lidar concept which utilizes recent developments in semiconductor diode laser technology in order to be considered suitable for wind and dust opacity profiling in the Mars lower atmosphere from a surface location. The current understanding of the Mars global climate and meteorology is very limited, with only sparse, near-surface data available from the Viking and Mars Pathfinder landers, supplemented by long-range remote sensing of the Martian atmosphere. The in situ measurements from a lander-based Doppler lidar would provide a unique dataset particularly for the boundary layer. The coupling of the radiative properties of the lower atmosphere with the dynamics involves the radiative absorption and scattering effects of the wind-driven dust. Variability in solar irradiance, on diurnal and seasonal time scales, drives vertical mixing and PBL (planetary boundary layer) thickness. The lidar data will also contribute to an understanding of the impact of wind-driven dust on lander and rover operations and lifetime through an improvement in our understanding of Mars climatology. In this paper we discuss the Mars lidar concept, and the development of a laboratory prototype for performance studies, using, local boundary layer and topographic target measurements.

  11. Photonic microwave carrier recovery using period-one nonlinear dynamics of semiconductor lasers for OFDM-RoF coherent detection.

    Science.gov (United States)

    Hung, Yu-Han; Yan, Jhih-Heng; Feng, Kai-Ming; Hwang, Sheng-Kwang

    2017-06-15

    This study investigates an all-optical scheme based on period-one (P1) nonlinear dynamics of semiconductor lasers, which regenerates the microwave carrier of an orthogonal frequency division multiplexing radio-over-fiber (OFDM-RoF) signal and uses it as a microwave local oscillator for coherent detection. Through the injection locking established between the OFDM-RoF signal and the P1 dynamics, frequency synchronization with highly preserved phase quality is inherently achieved between the recovered microwave carrier and the microwave carrier of the OFDM-RoF signal. A bit-error ratio down to 1.9×10-9 is achieved accordingly using the proposed scheme for coherent detection of a 32-GHz OFDM-RoF signal carrying 4  Gb/s 16-quadrature amplitude modulation data. No electronic microwave generators or electronic phase-locked loops are thus required. The proposed system can be operated up to at least 100 GHz and can be self-adapted to certain changes in the operating microwave frequency.

  12. Short-range remote spectral sensor using mid-infrared semiconductor lasers with orthogonal code-division multiplexing approach

    Science.gov (United States)

    Morbi, Zulfikar; Ho, D. B.; Ren, H.-W.; Le, Han Q.; Pei, Shin Shem

    2002-09-01

    Demonstration of short-range multispectral remote sensing, using 3 to 4-micrometers mid- infrared Sb semiconductor lasers based on code-division multiplexing (CDM) architecture, is described. The system is built on a principle similar to intensity- modulated/direct-detection optical-CDMA for communications, but adapted for sensing with synchronous, orthogonal codes to distinguish different wavelength channels with zero interchannel correlation. The concept is scalable for any number of channels, and experiments with a two-wavelength system are conducted. The CDM-signal processing yielded a white-Gaussian-like system noise that is found to be near the theoretical level limited by the detector fundamental intrinsic noise. With sub-mW transmitter average power, the system was able to detect an open-air acetylene gas leak of 10-2 STP ft3/hr from 10-m away with time-varying, random, noncooperative backscatters. A similar experiment detected and positively distinguished hydrocarbon oil contaminants on water from bio-organic oils and detergents. Projection for more advanced systems suggests a multi-kilometer-range capability for watt-level transmitters, and hundreds of wavelength channels can also be accommodated for active hyperspectral remote sensing application.

  13. Semiconductor nanostructures on silicon. Carrier dynamics, optical amplification and lasing; Halbleiternanostrukturen auf Silizium. Ladungstraegerdynamik, optischer Verstaerker und Laser

    Energy Technology Data Exchange (ETDEWEB)

    Lange, Christoph

    2008-12-11

    Two material systems that can be grown epitaxially on a silicon substrate are experimentally investigated with respect to their optical properties. Quantum wells (qw) of Germanium were experimentally investigated by spectrally resolved white-light pump-probe-absorption spectroscopy at room temperature. A second material class is Ga(NAsP), which was grown as quantum wells on a silicon substrate matching the lattice constant of the substrate. The basic optical properties were determined using the variable stripe-length method. In order to relate the results to those of established materials, a selection of comparable III/V semiconductors were measured in the same setups. The pump-probe measurements on (GaIn)As quantum wells exhibited a much more rapid scattering. In these material systems, quite similar optical gain values of 10{sup -3}/QW were found with decay times of several 100 ps. For (GaIn)(NAs), slightly higher values were determined. Using the variable stripe-length method, GaSb quantum wells with dot-like morphology were investigated. (orig.)

  14. Relaxation dynamics of femtosecond-laser-induced temperature modulation on the surfaces of metals and semiconductors

    Czech Academy of Sciences Publication Activity Database

    Levy, Yoann; Derrien, Thibault; Bulgakova, Nadezhda M.; Gurevich, E.L.; Mocek, Tomáš

    2016-01-01

    Roč. 374, Jun (2016), s. 157-164 ISSN 0169-4332 R&D Projects: GA MŠk ED2.1.00/01.0027 Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 6(XE) CZ.1.07/2.3.00/20.0143; OP VK 6(XE) CZ.1.07/2.3.00/20.0143 Institutional support: RVO:68378271 Keywords : LIPSS * modulated temperature relaxation * two-temperature model * nano-melting Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.387, year: 2016

  15. International Semiconductor Laser Conference. Held in Boston, Massachusetts on August 29 - September 1, 1988

    Science.gov (United States)

    1988-11-01

    gastronomically rewarding. Excellent restaurants serving seafood, "natural-foods’, and European and Asian dishes are everywhere. A baseball game at nearby...Laboratories, Holmdel, NJ, USA .......... 6-7 A:4 9:00 am DFB Lasers with a Crescent-Shaped Active Layer on a Corrugated p-type Substrate Y Ogawa, H. Horikawa...Berkeley, CA, USA ; W.M. Clark Jr., E.H. Stevens and MW Utlaut, Hughes Research Laboratories, Malibu, CA, USA .. 12-13 A:7 9:45 am Nanosecond Wavelength

  16. Semiconductor detectors for observation of multi-MeV protons and ions produced by lasers

    Czech Academy of Sciences Publication Activity Database

    Krása, Josef; Klir, D.; De Marco, Massimo; Cikhardt, J.; Velyhan, Andriy; Řezáč, Karel; Pfeifer, Miroslav; Krouský, Eduard; Ryć, L.; Dostál, Jan; Kaufman, Jan; Ullschmied, Jiří; Limpouch, J.

    2016-01-01

    Roč. 3, č. 1 (2016), 9-11 ISSN 2336-2626 R&D Projects: GA ČR GA16-07036S; GA MŠk EF15_008/0000162; GA MŠk(CZ) LD14089 Grant - others:ELI Beamlines(XE) CZ.02.1.01/0.0/0.0/15_008/0000162 Institutional support: RVO:68378271 ; RVO:61389021 Keywords : laser-accelerated ions * ion collectors * SiC detectors * similarity relations * electromagnetic pulse Subject RIV: BL - Plasma and Gas Discharge Physics

  17. Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers

    Energy Technology Data Exchange (ETDEWEB)

    Korenev, V. V., E-mail: korenev@spbau.ru; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V. [Saint Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation)

    2013-10-15

    It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots.

  18. Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers

    International Nuclear Information System (INIS)

    Korenev, V. V.; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.

    2013-01-01

    It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots

  19. Doping Optimization for High Efficiency in Semiconductor Diode Lasers and Amplifiers

    Science.gov (United States)

    2016-03-01

    ηiVph αm αm + αi (I − Ith) , (12) where ηi is the internal quantum efficiency, Vph is the voltage associated with the energy of a single photon, and...efficiency. In general, this could be a negligible detail; however, for certain cases such as V0 Vph , the difference could be significant, since...communications applications. Bour and Rosen provided an expression for the maximum PCE of a diode laser, given as [12] ηPCE = ηi Vph V0 αm αm + αi x( 1 + √ 1 + x

  20. Laser ablation and deposition of wide bandgap semiconductors: plasma and nanostructure of deposits diagnosis

    Science.gov (United States)

    Sanz, M.; López-Arias, M.; Rebollar, E.; de Nalda, R.; Castillejo, M.

    2011-12-01

    Nanostructured CdS and ZnS films on Si (100) substrates were obtained by nanosecond pulsed laser deposition at the wavelengths of 266 and 532 nm. The effect of laser irradiation wavelength on the surface structure and crystallinity of deposits was characterized, together with the composition, expansion dynamics and thermodynamic parameters of the ablation plume. Deposits were analyzed by environmental scanning electron microscopy, atomic force microscopy and X-ray diffraction, while in situ monitoring of the plume was carried out with spectral, temporal and spatial resolution by optical emission spectroscopy. The deposits consist of 25-50 nm nanoparticle assembled films but ablation in the visible results in larger aggregates (150 nm) over imposed on the film surface. The aggregate free films grown at 266 nm on heated substrates are thicker than those grown at room temperature and in the former case they reveal a crystalline structure congruent with that of the initial target material. The observed trends are discussed in reference to the light absorption step, the plasma composition and the nucleation processes occurring on the substrate.

  1. Desarrollo de la tecnología de MOVPE para el crecimiento de semiconductores III-V : fabricación de células solares para concentraciones luminosas elevadas

    OpenAIRE

    Galiana Blanco, Beatriz

    2011-01-01

    El trabajo de estas tesis trata sobre el desarrollo en el IES-UPM de la tecnología de crecimiento epitaxial de fase vapor mediante precursores metalorgánicos (MOVPE) para el crecimiento de células solares de semiconductores III-V para concentraciones luminosas elevadas. En la primera parte de la memoria se presentan los principios de la MOVPE y el estudio de los materiales semiconductores utilizados a lo largo de la tesis: GaAs, AlGaAs, GaInP y AlInP. Para ello, se ha analizado cómo influ...

  2. Semiconductor lasers driven by self-sustained chaotic electronic oscillators and applications to optical chaos cryptography.

    Science.gov (United States)

    Kingni, Sifeu Takougang; Mbé, Jimmi Hervé Talla; Woafo, Paul

    2012-09-01

    In this work, we numerically study the dynamics of vertical cavity surface emitting laser (VCSEL) firstly when it is driven by Chua's oscillator, secondly in case where it is driven by a broad frequency spectral bandwidth chaotic oscillator developed by Nana et al. [Commun. Nonlinear Sci. Numer. Simul. 14, 2266 (2009)]. We demonstrated that the VCSEL generated robust chaotic dynamics compared to the ones found in VCSEL subject to a sinusoidally modulated current and therefore it is more suitable for chaos encryption techniques. The synchronization characteristics and the communication performances of unidirectional coupled VCSEL driven by the broad frequency spectral bandwidth chaotic oscillators are investigated numerically. The results show that high-quality synchronization and transmission of messages can be realized for suitable system parameters. Chaos shift keying method is successfully applied to encrypt a message at a high bitrate.

  3. Photobiostimulation effects on germination and early growth of wheat seeds (Triticum aestivum L) produced by a semiconductor laser with λ=980nm

    International Nuclear Information System (INIS)

    Michtchenko, A.; Hernandez, M.

    2009-01-01

    The effect of the exposure of wheat (Triticum aestivum L) seeds to a IR laser radiation with λ=980nm produced by a semiconductor laser on germination and early growth had been studied under laboratory conditions. Seeds were irradiated to one of two laser intensities 15 mWcm - ''2 or 30 mWcm -2 for different periods of time 30, 60 or 120 s. Seeds exposed to a light intensity of 15mWcm -2 and an exposition time of 30 s. showed an increase on the percentage of seeds germinated normally while the percentage of seeds germinated abnormally decreased. At the same time there is a stimulation effect on the growth of the stem and on the growth of the root of 10% on wheat seedlings over control seedlings. Significant differences (ρ < 0.001) were observed between the control and the above treatment. (Author)

  4. Scattering amplitudes and static atomic correction factors for the composition-sensitive 002 reflection in sphalerite ternary III-V and II-VI semiconductors.

    Science.gov (United States)

    Schowalter, M; Müller, K; Rosenauer, A

    2012-01-01

    Modified atomic scattering amplitudes (MASAs), taking into account the redistribution of charge due to bonds, and the respective correction factors considering the effect of static atomic displacements were computed for the chemically sensitive 002 reflection for ternary III-V and II-VI semiconductors. MASAs were derived from computations within the density functional theory formalism. Binary eight-atom unit cells were strained according to each strain state s (thin, intermediate, thick and fully relaxed electron microscopic specimen) and each concentration (x = 0, …, 1 in 0.01 steps), where the lattice parameters for composition x in strain state s were calculated using continuum elasticity theory. The concentration dependence was derived by computing MASAs for each of these binary cells. Correction factors for static atomic displacements were computed from relaxed atom positions by generating 50 × 50 × 50 supercells using the lattice parameter of the eight-atom unit cells. Atoms were randomly distributed according to the required composition. Polynomials were fitted to the composition dependence of the MASAs and the correction factors for the different strain states. Fit parameters are given in the paper.

  5. Development of III-Sb metamorphic DBR membranes on InP for vertical cavity laser applications

    Science.gov (United States)

    Addamane, S. J.; Mansoori, A.; Renteria, E. J.; Dawson, N.; Shima, D. M.; Rotter, T. J.; Hains, C. P.; Dawson, L. R.; Balakrishnan, G.

    2016-04-01

    Sb-based metamorphic DBR membranes are developed for InP-based vertical cavity laser applications. The reflectivity of the metamorphic DBR membrane is compared to the reflectivity of a lattice-matched DBR to characterize the optical quality of the DBR membrane. The metamorphic interface between InP and the III-antimonides is found to degrade the reflectivity of the DBR. Therefore, the growth temperature for the metamorphic DBR is optimized in order to obtain highly reflective (>99.8%) III-Sb thin-film membranes.

  6. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

    KAUST Repository

    Leonard, J. T.; Cohen, D. A.; Yonkee, B. P.; Farrell, R. M.; Margalith, T.; Lee, S.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.

    2015-01-01

    © 2015 AIP Publishing LLC. We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3nm quantum well width, 1nm barriers, a 5nm electron-blocking layer, and a 6.95- λ total cavity thickness. These advances yield a single longitudinal mode 406nm nonpolar VCSEL with a low threshold current density (∼16kA/cm2), a peak output power of ∼12μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

  7. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

    KAUST Repository

    Leonard, J. T.

    2015-07-06

    © 2015 AIP Publishing LLC. We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3nm quantum well width, 1nm barriers, a 5nm electron-blocking layer, and a 6.95- λ total cavity thickness. These advances yield a single longitudinal mode 406nm nonpolar VCSEL with a low threshold current density (∼16kA/cm2), a peak output power of ∼12μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

  8. Laser-induced removal of a dye C.I. Acid Red 87 using n-type WO{sub 3} semiconductor catalyst

    Energy Technology Data Exchange (ETDEWEB)

    Qamar, M. [Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, KFUPM Box 741, Dhahran 31261 (Saudi Arabia); Gondal, M.A., E-mail: magondal@kfupm.edu.sa [Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, KFUPM Box 741, Dhahran 31261 (Saudi Arabia); Laser Research Laboratory, Physics Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Hayat, K. [Chemistry Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Yamani, Z.H. [Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, KFUPM Box 741, Dhahran 31261 (Saudi Arabia); Laser Research Laboratory, Physics Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Al-Hooshani, K. [Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, KFUPM Box 741, Dhahran 31261 (Saudi Arabia); Chemistry Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia)

    2009-10-30

    Water contamination by organic substances such as dyes is of great concern worldwide due to their utilization in many industrial processes and environmental concerns. To cater the needs for waste water treatment polluted with organic dyes, laser-induced photocatalytic process was investigated for removal of a dye derivative namely Acid Red 87 using n-type WO{sub 3} semiconductor catalyst. The degradation was investigated in aqueous suspensions of tungsten oxide under different experimental conditions using laser instead of conventional UV lamp as an irradiation source. The degradation process was monitored by measuring the change in dye concentration as a function of laser irradiation time by employing UV spectroscopic analysis. The degradation of dye was studied by varying different parameters such as laser energy, reaction pH, substrate concentration, catalyst concentration, and in the presence of electron acceptors such as hydrogen peroxide (H{sub 2}O{sub 2}), and potassium bromate (KBrO{sub 3}). The degradation rates were found to be strongly dependent on all the above-mentioned parameters. Our experimental results revealed that the dye degradation process was very fast (within few minutes) under laser irradiation as compared to conventional setups using broad spectral lamps (hours or days) and this laser-induced photocatalytic degradation method could be an effective means to eliminate the pollutants present in liquid phase. The experience gained through this study could be beneficial for treatment of waste water contaminated with organic dyes and other organic pollutants.

  9. Ultra-fast relaxation kinetics in semiconductors

    International Nuclear Information System (INIS)

    Luzzi, R.

    1983-01-01

    It is presented a brief description of relaxation processes in highly excited semiconductor plasmas (HESP). Comparison with experimental data obtained by means of ultra-fast laser light spectroscopy (UFLS) is made. Some aspects of response funtion theory in systems far-from-equilibrium are reviewed in Section II. In Section III we present some comments on the question of nonequilibrium thermodynamics relevant to the problem to be considered. In last section we present a brief summary of the different aspects of the subject. (author) [pt

  10. Ultra-fast relaxation kinetics in semiconductors

    International Nuclear Information System (INIS)

    Luzzi, R.

    1983-01-01

    It is presented a brief description of relaxation processes in highly excited semiconductor plasmas (HESP). Comparison with experimental data obtained by means of ultra-fast laser light spectroscopy (UFLS) is made. Some aspects of response function theory in systems far-from-equilibrium are reviewed in Section II. In Section III some comments on the question of nonequilibrium thermodynamics relevant to the problem to be considered are presented. In last Section a brief summary of the different aspects of the subject is also presented. (Author) [pt

  11. Electron scattering from atoms in the presence of a laser field. III

    International Nuclear Information System (INIS)

    Mittleman, M.H.

    1977-01-01

    The development of the theory of the effect of a laser on electron-atom scattering is continued by the derivation of explicit relations between the observed electron-atom scattering cross sections in the presence of a laser and exact electron-atom scattering cross sections with no laser present. No approximation concerning the scattering interaction is made. The only approximations concerning the laser are that (1) the laser-atom interaction energy is small compared to atomic energies, (2) the Rabi frequency times the collision time is small, and (3) the laser intensity in appropriate units is small

  12. Development of III-nitride semiconductors by molecular beam epitaxy and cluster beam epitaxy and fabrication of LEDs based on indium gallium nitride MQWs

    Science.gov (United States)

    Chen, Tai-Chou Papo

    The family of III-Nitrides (the binaries InN, GaN, AIN, and their alloys) is one of the most important classes of semiconductor materials. Of the three, Indium Nitride (InN) and Aluminum Nitride (AIN) have been investigated much less than Gallium Nitride (GaN). However, both of these materials are important for optoelectronic infrared and ultraviolet devices. In particular, since InN was found recently to be a narrow gap semiconductor (Eg=0.7eV), its development should extend the applications of nitride semiconductors to the spectral region appropriate to fiber optics communication and photovoltaic applications. Similarly, the development of AIN should lead to deep UV light emitting diodes (LEDs). The first part of this work addresses the evaluation of structural, optical and transport properties of InN films grown by two different deposition methods. In one method, active nitrogen was produced in the form of nitrogen radicals by a radio frequency (RF) plasma-assisted source. In an alternative method, active nitrogen was produced in the form of clusters containing approximately 2000 nitrogen molecules. These clusters were produced by adiabatic expansion from high stagnation pressure through a narrow nozzle into vacuum. The clusters were singly or doubly ionized with positive charge by electron impact and accelerated up to approximately 20 to 25 KV prior to their disintegration on the substrate. Due to the high local temperature produced during the impact of clusters with the substrate, this method is suitable for the deposition of InN at very low temperatures. The films are auto-doped n-type with carrier concentrations varying from 3 x 1018 to 1020 cm-3 and the electron effective mass of these films was determined to be 0.09m0. The majority of the AIN films was grown by the cluster beam epitaxy method and was doped n- and p- type by incorporating silicon (Si) and magnesium (Mg) during the film deposition. All films were grown under Al-rich conditions at relatively

  13. Fiber transmission and generation of ultrawideband pulses by direct current modulation of semi-conductor lasers and chirp-to-intensity conversion

    DEFF Research Database (Denmark)

    Company Torres, Victor; Prince, Kamau; Tafur Monroy, Idelfonso

    2008-01-01

    Optical pulses generated by current modulation of semiconductor lasers are strongly frequency chirped. This effect has been considered pernicious for optical communications. We take advantage of this effect for the generation of ultrawideband microwave signals by using an optical filter to achieve...... chirp-to-intensity conversion. We also experimentally achieve propagation through a 20 km nonzero dispersion shifted fiber with no degradation of the signal at the receiver. Our method constitutes a prospective low-cost solution and offers integration capabilities with fiber...

  14. Backscatter spectra measurements of the two beams on the same cone on Shenguang-III laser facility

    Science.gov (United States)

    Zha, Weiyi; Yang, Dong; Xu, Tao; Liu, Yonggang; Wang, Feng; Peng, Xiaoshi; Li, Yulong; Wei, Huiyue; Liu, Xiangming; Mei, Yu; Yan, Yadong; He, Junhua; Li, Zhichao; Li, Sanwei; Jiang, Xiaohua; Guo, Liang; Xie, Xufei; Pan, Kaiqiang; Liu, Shenye; Jiang, Shaoen; Zhang, Baohan; Ding, Yongkun

    2018-01-01

    In laser driven hohlraums, laser beams on the same incident cone may have different beam and plasma conditions, causing beam-to-beam backscatter difference and subsequent azimuthal variations in the x-ray drive on the capsule. To elucidate the large variation of backscatter proportion from beam to beam in some gas-filled hohlraum shots on Shenguang-III, two 28.5° beams have been measured with the Stimulated Raman Scattering (SRS) time-resolved spectra. A bifurcated fiber is used to sample two beams and then coupled to a spectrometer and streak camera combination to reduce the cost. The SRS spectra, characterized by a broad wavelength, were further corrected considering the temporal distortion and intensity modulation caused by components along the light path. This measurement will improve the understanding of the beam propagation inside the hohlraum and related laser plasma instabilities.

  15. Microscopic analysis of the optoelectronic properties of semiconductor gain media for laser applications; Mikroskopische Analyse optoelektronischer Eigenschaften von Halbleiterverstaerkungsmedien fuer Laseranwendungen

    Energy Technology Data Exchange (ETDEWEB)

    Bueckers, Christina

    2010-12-03

    A microscopic many-particle theory is applied to model a wide range of semiconductor laser gain materials. The fundamental understanding of the gain medium and the underlying carrier interaction processes allow for the quantitative prediction of the optoelectronic properties governing the laser performance. Detailed theory-experiment-comparisons are shown for a variety of structures demonstrating the application capabilities of the theoretical approach. The microscopically calculated material properties, in particular absorption, optical gain, luminescence and the intrinsic carrier losses due to radiative and Auger-recombination, constitute the critical input to analyse and design laser structures. On this basis, important system features such as laser wavelength or threshold behaviour become predictable. However, the theory is also used in a diagnostic fashion, e.g. to extract otherwise poorly known structural parameter. Thus, novel concepts for the optimisation of laser designs may be developed with regard to the requirements of specific applications. Moreover, the approach allows for the systematic exploration and assessment of completely novel material systems and their application potential. (orig.)

  16. High energy ion irradiated III-N semiconductors (AlN, GaN, InN): study of point defect and extended defect creation

    International Nuclear Information System (INIS)

    Sall, Mamour

    2013-01-01

    Nitride semiconductors III N (AlN, GaN, InN) have interesting properties for micro-and opto-electronic applications. In use, they may be subjected to different types of radiation in a wide range of energy. In AlN, initially considered insensitive to electronic excitations (Se), we have demonstrated a novel type of synergy between Se and nuclear collisions (Sn) for the creation of defects absorbing at 4.7 eV. In addition, another effect of Se is highlighted in AlN: climb of screw dislocations under the influence of Se, at high fluence. In GaN, two mechanisms can explain the creation of defects absorbing at 2.8 eV: a synergy between Se and Sn, or a creation only due to Sn but with a strong effect of the size of displacement cascades. The study, by TEM, of the effects of Se in the three materials, exhibits behaviors highly dependent on the material while they all belong to the same family with the same atomic structure. Under monoatomic ion irradiations (velocity between 0.4 and 5 MeV/u), while discontinuous tracks are observed in GaN and InN, no track is observed in AlN with the highest electronic stopping power (33 keV/nm). Only fullerene clusters produce tracks in AlN. The inelastic thermal spike model was used to calculate the energies required to produce track in AlN, GaN and InN, they are 4.2 eV/atom, 1.5 eV/atom and 0.8 eV/atom, respectively. This sensitivity difference according to Se, also occurs at high fluence. (author)

  17. III-Nitride Blue Laser Diode with Photoelectrochemically Etched Current Aperture

    Science.gov (United States)

    Megalini, Ludovico

    Group III-nitride is a remarkable material system to make highly efficient and high-power optoelectronics and electronic devices because of the unique electrical, physical, chemical and structural properties it offers. In particular, InGaN-based blue Laser Diodes (LDs) have been successfully employed in a variety of applications ranging from biomedical and military devices to scientific instrumentation and consumer electronics. Recently their use in highly efficient Solid State Lighting (SSL) has been proposed because of their superior beam quality and higher efficiency at high input power density. Tremendous advances in research of GaN semi-polar and non-polar crystallographic planes have led both LEDs and LDs grown on these non-basal planes to rival with, and with the promise to outperform, their equivalent c-plane counterparts. However, still many issues need to be addressed, both related to material growth and device fabrication, including a lack of conventional wet etching techniques. GaN and its alloys with InN and AlN have proven resistant essentially to all known standard wet etching techniques, and the predominant etching methods rely on chlorine-based dry etching (RIE). These introduce sub-surface damage which can degrade the electrical properties of the epitaxial structure and reduce the reliability and lifetime of the final device. Such reasons and the limited effectiveness of passivation techniques have so far suggested to etch the LD ridges before the active region, although it is well-known that this can badly affect the device performance, especially in narrow stripe width LDs, because the gain guiding obtained in the planar configuration is weak and the low index step and high lateral current leakage result in devices with threshold current density higher than devices whose ridge is etched beyond the active region. Moreover, undercut etching of III-nitride layers has proven even more challenging, with limitations in control of the lateral etch

  18. Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Podoskin, A. A., E-mail: podoskin@mail.ioffe.ru; Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A.; Tarasov, I. S. [Russian Academy of Sciences, Ioffe Institute (Russian Federation)

    2015-08-15

    A model describing the operation of a completely optical cell, based on the competition of lasing of Fabry-Perot cavity modes and the high-Q closed mode in high-power semiconductor lasers is proposed. Based on rate equations, the conditions of lasing switching between Fabry-Perot modes for ground and excited lasing levels and the closed mode are considered in the case of increasing internal optical loss under conditions of high current pump levels. The optical-cell operation conditions in the mode of a high-power laser radiation switch (reversible mode-structure switching) and in the mode of a memory cell with bistable irreversible lasing switching between mode structures with various Q-factors are considered.

  19. Realization of high irradiation uniformity for direct drive ICF at the SG-III prototype laser facility

    International Nuclear Information System (INIS)

    Tian, C.; Shan, L.; Zhang, B.; Zhou, W.; Liu, D.; Bi, B.; Zhang, F.; Wang, W.; Zhang, B.; Giu, Y.

    2015-01-01

    The direct drive irradiation uniformity during the initial imprinting phase at the SG-III prototype laser facility is analyzed and optimized with different methods. At first, the polar direct drive technique is applied to reduce the root mean square deviation σ from 16.1% to 6.4%. To further reduce the non-uniformity, we propose a new method by adjusting the intensity distribution of the laser spot. The overlap of laser beams on the capsule surface is studied and a factor is introduced to adjust the intensity of the laser spot for achieving absolute irradiation uniformity while bringing wild intensity change at laser spot edges. Noting that the overlapping region at the capsule surface is symmetrically distributed, the contribution of light from the edge of a spot can be transferred to its own internal. The newly adjusted intensity distributes at two main regions and the intensity varies slowly and continuously in each, further reducing σ to about 0.35%. Taken into account that the adjusted intensity has very sharp steps, super-Gaussian spatial profiles are used to approximate the required intensity to make it more practicable, which leads σ to 0.94%. Furthermore, sensitivity analysis to beam errors is performed and results show that this scheme can tolerate a certain amount of uncertainties. (authors)

  20. Mode locking of an external cavity asymmetric quantum-well GaAs/AlGaAs semiconductor laser

    International Nuclear Information System (INIS)

    Vasil'ev, Petr P; Kan, H; Ohta, H; Hiruma, T; Tanaka, K A

    2006-01-01

    A theoretical model of the optical gain in asymmetric GaAs/AlGaAs quantum-well lasers is developed. It is demonstrated that the emission spectrum of asymmetric GaAs/AlGaAs quantum-well lasers is much broader than that of standard quantum-well lasers. The experimental samples of such lasers and superluminescent diodes with the emission bandwidth exceeding 50 nm are fabricated. Wavelength tunable ultrashort pulses with duration of 1-2 ps at repetition rates of 0.4-1 GHz are obtained by active mode locking of an external cavity laser. (lasers)