Computational Diffusion Magnetic Resonance Imaging Based on Time-Dependent Bloch NMR Flow Equation and Bessel Functions.

Science.gov (United States)

Awojoyogbe, Bamidele O; Dada, Michael O; Onwu, Samuel O; Ige, Taofeeq A; Akinwande, Ninuola I

2016-04-01

Magnetic resonance imaging (MRI) uses a powerful magnetic field along with radio waves and a computer to produce highly detailed "slice-by-slice" pictures of virtually all internal structures of matter. The results enable physicians to examine parts of the body in minute detail and identify diseases in ways that are not possible with other techniques. For example, MRI is one of the few imaging tools that can see through bones, making it an excellent tool for examining the brain and other soft tissues. Pulsed-field gradient experiments provide a straightforward means of obtaining information on the translational motion of nuclear spins. However, the interpretation of the data is complicated by the effects of restricting geometries as in the case of most cancerous tissues and the mathematical concept required to account for this becomes very difficult. Most diffusion magnetic resonance techniques are based on the Stejskal-Tanner formulation usually derived from the Bloch-Torrey partial differential equation by including additional terms to accommodate the diffusion effect. Despite the early success of this technique, it has been shown that it has important limitations, the most of which occurs when there is orientation heterogeneity of the fibers in the voxel of interest (VOI). Overcoming this difficulty requires the specification of diffusion coefficients as function of spatial coordinate(s) and such a phenomenon is an indication of non-uniform compartmental conditions which can be analyzed accurately by solving the time-dependent Bloch NMR flow equation analytically. In this study, a mathematical formulation of magnetic resonance flow sequence in restricted geometry is developed based on a general second order partial differential equation derived directly from the fundamental Bloch NMR flow equations. The NMR signal is obtained completely in terms of NMR experimental parameters. The process is described based on Bessel functions and properties that can make it

Bloch electrons in 2D periodic electric and magnetic fields; Bloch-Elektronen in 2D periodischen elektrischen und magnetischen Feldern

Energy Technology Data Exchange (ETDEWEB)

Naundorf, B.

2001-06-01

The following topics were dealt with: electrons in periodic potentials, Bloch states, Landau states, wave packets, Harper equation, uncoupled Landau band states, matrix elements and matrix equations, periodic electric and magnetic fields (WL)

Modeling High Frequency Semiconductor Devices Using Maxwell's Equations

National Research Council Canada - National Science Library

El-Ghazaly, Samier

1999-01-01

.... In this research, we first replaced the conventional semiconductor device models, which are based on Poisson's Equation as a semiconductor model, with a new one that uses the full-wave electro...

Extended rate equations

International Nuclear Information System (INIS)

Shore, B.W.

1981-01-01

The equations of motion are discussed which describe time dependent population flows in an N-level system, reviewing the relationship between incoherent (rate) equations, coherent (Schrodinger) equations, and more general partially coherent (Bloch) equations. Approximations are discussed which replace the elaborate Bloch equations by simpler rate equations whose coefficients incorporate long-time consequences of coherence

Mode-Locking in Broad-Area Semiconductor Lasers Enhanced by Picosecond-Pulse Injection

OpenAIRE

Kaiser, J; Fischer, I; Elsasser, W; Gehrig, E; Hess, O

2004-01-01

We present combined experimental and theoretical investigations of the picosecond emission dynamics of broad-area semiconductor lasers (BALs). We enhance the weak longitudinal self-mode-locking that is inherent to BALs by injecting a single optical 50-ps pulse, which triggers the output of a distinct regular train of 13-ps pulses. Modeling based on multimode Maxwell-Bloch equations illustrates how the dynamic interaction of the injected pulse with the internal laser field efficiently couples ...

Self-consistent Maxwell-Bloch theory of quantum-dot-population switching in photonic crystals

International Nuclear Information System (INIS)

Takeda, Hiroyuki; John, Sajeev

2011-01-01

We theoretically demonstrate the population switching of quantum dots (QD's), modeled as two-level atoms in idealized one-dimensional (1D) and two-dimensional (2D) photonic crystals (PC's) by self-consistent solution of the Maxwell-Bloch equations. In our semiclassical theory, energy states of the electron are quantized, and electron dynamics is described by the atomic Bloch equation, while electromagnetic waves satisfy the classical Maxwell equations. Near a waveguide cutoff in a photonic band gap, the local electromagnetic density of states (LDOS) and spontaneous emission rates exhibit abrupt changes with frequency, enabling large QD population inversion driven by both continuous and pulsed optical fields. We recapture and generalize this ultrafast population switching using the Maxwell-Bloch equations. Radiative emission from the QD is obtained directly from the surrounding PC geometry using finite-difference time-domain simulation of the electromagnetic field. The atomic Bloch equations provide a source term for the electromagnetic field. The total electromagnetic field, consisting of the external input and radiated field, drives the polarization components of the atomic Bloch vector. We also include a microscopic model for phonon dephasing of the atomic polarization and nonradiative decay caused by damped phonons. Our self-consistent theory captures stimulated emission and coherent feedback effects of the atomic Mollow sidebands, neglected in earlier treatments. This leads to remarkable high-contrast QD-population switching with relatively modest (factor of 10) jump discontinuities in the electromagnetic LDOS. Switching is demonstrated in three separate models of QD's placed (i) in the vicinity of a band edge of a 1D PC, (ii) near a cutoff frequency in a bimodal waveguide channel of a 2D PC, and (iii) in the vicinity of a localized defect mode side coupled to a single-mode waveguide channel in a 2D PC.

Bloch-wave engineered submicron-diameter quantum-dot micropillars for cavity QED experiments

DEFF Research Database (Denmark)

Gregersen, Niels; Lermer, Matthias; Reitzenstein, Stephan

2013-01-01

The semiconductor micropillar is attractive for cavity QED experiments. For strong coupling, the figure of merit is proportional to Q/√V, and a design combining a high Q and a low mode volume V is thus desired. However, for the standard submicron diameter design, poor mode matching between the ca...... the cavity and the DBR Bloch mode limits the Q. We present a novel adiabatic design where Bloch-wave engineering is employed to improve the mode matching, allowing the demonstration of a record-high vacuum Rabi splitting of 85 μeV and a Q of 13600 for a 850 nm diameter micropillar....

A 2D multi-term time and space fractional Bloch-Torrey model based on bilinear rectangular finite elements

Science.gov (United States)

Qin, Shanlin; Liu, Fawang; Turner, Ian W.

2018-03-01

The consideration of diffusion processes in magnetic resonance imaging (MRI) signal attenuation is classically described by the Bloch-Torrey equation. However, many recent works highlight the distinct deviation in MRI signal decay due to anomalous diffusion, which motivates the fractional order generalization of the Bloch-Torrey equation. In this work, we study the two-dimensional multi-term time and space fractional diffusion equation generalized from the time and space fractional Bloch-Torrey equation. By using the Galerkin finite element method with a structured mesh consisting of rectangular elements to discretize in space and the L1 approximation of the Caputo fractional derivative in time, a fully discrete numerical scheme is derived. A rigorous analysis of stability and error estimation is provided. Numerical experiments in the square and L-shaped domains are performed to give an insight into the efficiency and reliability of our method. Then the scheme is applied to solve the multi-term time and space fractional Bloch-Torrey equation, which shows that the extra time derivative terms impact the relaxation process.

Bloch-Kohn and Wannier-Kohn functions in one dimension

International Nuclear Information System (INIS)

Bruno-Alfonso, Alexys; Guo-Qiang, Hai

2003-01-01

Bloch and Wannier functions of the Kohn type for a quite general one-dimensional Hamiltonian with inversion symmetry are studied. Important clarifications on null minigaps and the symmetry of those functions are given, with emphasis on the Kronig-Penney model. The lack of a general selection rule on the miniband index for optical transitions between edge states in semiconductor superlattices is discussed. A direct method for the calculation of Wannier-Kohn functions is presented

Impact of slow-light enhancement on optical propagation in active semiconductor photonic crystal waveguides

DEFF Research Database (Denmark)

Chen, Yaohui; de Lasson, Jakob Rosenkrantz; Gregersen, Niels

2015-01-01

We derive and validate a set of coupled Bloch wave equations for analyzing the reflection and transmission properties of active semiconductor photonic crystal waveguides. In such devices, slow-light propagation can be used to enhance the material gain per unit length, enabling, for example......, the realization of short optical amplifiers compatible with photonic integration. The coupled wave analysis is compared to numerical approaches based on the Fourier modal method and a frequency domain finite element technique. The presence of material gain leads to the build-up of a backscattered field, which...... is interpreted as distributed feedback effects or reflection at passive-active interfaces, depending on the approach taken. For very large material gain values, the band structure of the waveguide is perturbed, and deviations from the simple coupled Bloch wave model are found....

Iterative solution of the semiconductor device equations

Energy Technology Data Exchange (ETDEWEB)

Bova, S.W.; Carey, G.F. [Univ. of Texas, Austin, TX (United States)

1996-12-31

Most semiconductor device models can be described by a nonlinear Poisson equation for the electrostatic potential coupled to a system of convection-reaction-diffusion equations for the transport of charge and energy. These equations are typically solved in a decoupled fashion and e.g. Newton`s method is used to obtain the resulting sequences of linear systems. The Poisson problem leads to a symmetric, positive definite system which we solve iteratively using conjugate gradient. The transport equations lead to nonsymmetric, indefinite systems, thereby complicating the selection of an appropriate iterative method. Moreover, their solutions exhibit steep layers and are subject to numerical oscillations and instabilities if standard Galerkin-type discretization strategies are used. In the present study, we use an upwind finite element technique for the transport equations. We also evaluate the performance of different iterative methods for the transport equations and investigate various preconditioners for a few generalized gradient methods. Numerical examples are given for a representative two-dimensional depletion MOSFET.

A theory of generalized Bloch oscillations

International Nuclear Information System (INIS)

Duggen, Lars; Lassen, Benny; Lew Yan Voon, L C; Willatzen, Morten

2016-01-01

Bloch oscillations of electrons are shown to occur for cases when the energy spectrum does not consist of the traditional evenly-spaced ladders and the potential gradient does not result from an external electric field. A theory of such generalized Bloch oscillations is presented and an exact calculation is given to confirm this phenomenon. Our results allow for a greater freedom of design for experimentally observing Bloch oscillations. For strongly coupled oscillator systems displaying Bloch oscillations, it is further demonstrated that reordering of oscillators leads to destruction of Bloch oscillations. We stipulate that the presented theory of generalized Bloch oscillations can be extended to other systems such as acoustics and photonics. (paper)

Vacuum Bloch-Siegert shift in Landau polaritons with ultra-high cooperativity

Science.gov (United States)

Li, Xinwei; Bamba, Motoaki; Zhang, Qi; Fallahi, Saeed; Gardner, Geoff C.; Gao, Weilu; Lou, Minhan; Yoshioka, Katsumasa; Manfra, Michael J.; Kono, Junichiro

2018-06-01

A two-level system resonantly interacting with an a.c. magnetic or electric field constitutes the physical basis of diverse phenomena and technologies. However, Schrödinger's equation for this seemingly simple system can be solved exactly only under the rotating-wave approximation, which neglects the counter-rotating field component. When the a.c. field is sufficiently strong, this approximation fails, leading to a resonance-frequency shift known as the Bloch-Siegert shift. Here, we report the vacuum Bloch-Siegert shift, which is induced by the ultra-strong coupling of matter with the counter-rotating component of the vacuum fluctuation field in a cavity. Specifically, an ultra-high-mobility two-dimensional electron gas inside a high-Q terahertz cavity in a quantizing magnetic field revealed ultra-narrow Landau polaritons, which exhibited a vacuum Bloch-Siegert shift up to 40 GHz. This shift, clearly distinguishable from the photon-field self-interaction effect, represents a unique manifestation of a strong-field phenomenon without a strong field.

Behaviour of neutrons passing through the Bloch wall

International Nuclear Information System (INIS)

Schaerpf, O.

1976-01-01

In part I of the present paper the pertinent knowledge about Bloch walls is presented and developed insofar as it appears necessary for the experiments with neutrons, that is to say the direction of magnetization within the domains, the calculation of the variation of magnetization in the wall, the wall thickness, and the zigzag structure of the Bloch wall. In part II it is first clarified why the Bloch wall can be treated as a continuum problem. It shows that this is possible far away from Laue reflexes. For angles far away from Laure-reflex angles the interaction of the periodic structure of the magnetization can be described with the aid of an averaged magnetic flux density. The consequence of it is the possibility of treating the problem by means of a Schroedinger equation with continous interaction. This leads to a law of refraction. The question of the possibilities for explaining the intensity behavior is treated in part III. This part, from different aspects, describes the fact, which already was pointed out in Schaerpf, O., Vehoff, H., Schwink, Ch. 1973, that the spin of the neutrons in passing through the wall is partly taken along by the magnetization gradually rotating in the wall. (orig./WBU) [de

Computational Modeling of Ultrafast Pulse Propagation in Nonlinear Optical Materials

Science.gov (United States)

Goorjian, Peter M.; Agrawal, Govind P.; Kwak, Dochan (Technical Monitor)

1996-01-01

There is an emerging technology of photonic (or optoelectronic) integrated circuits (PICs or OEICs). In PICs, optical and electronic components are grown together on the same chip. rib build such devices and subsystems, one needs to model the entire chip. Accurate computer modeling of electromagnetic wave propagation in semiconductors is necessary for the successful development of PICs. More specifically, these computer codes would enable the modeling of such devices, including their subsystems, such as semiconductor lasers and semiconductor amplifiers in which there is femtosecond pulse propagation. Here, the computer simulations are made by solving the full vector, nonlinear, Maxwell's equations, coupled with the semiconductor Bloch equations, without any approximations. The carrier is retained in the description of the optical pulse, (i.e. the envelope approximation is not made in the Maxwell's equations), and the rotating wave approximation is not made in the Bloch equations. These coupled equations are solved to simulate the propagation of femtosecond optical pulses in semiconductor materials. The simulations describe the dynamics of the optical pulses, as well as the interband and intraband.

Quantum dynamical phenomena of independent electrons in semiconductor superlattices subject to a uniform electric field

International Nuclear Information System (INIS)

Bouchard, A.M.

1994-01-01

This report discusses the following topics: Bloch oscillations and other dynamical phenomena of electrons in semiconductor superlattices; solvable dynamical model of an electron in a one-dimensional aperiodic lattice subject to a uniform electric field; and quantum dynamical phenomena of electrons in aperiodic semiconductor superlattices

A theory of generalized Bloch oscillations

DEFF Research Database (Denmark)

Duggen, Lars; Lew Yan Voon, L. C.; Lassen, Benny

2016-01-01

Bloch oscillations of electrons are shown to occur for cases when the energy spectrum does not consist of the traditional evenly-spaced ladders and the potential gradient does not result from an external electric field. A theory of such generalized Bloch oscillations is presented and an exact...... oscillations. We stipulate that the presented theory of generalized Bloch oscillations can be extended to other systems such as acoustics and photonics....

Ultrafast dynamics of photoexcited charge and spin currents in semiconductor nanostructures

Science.gov (United States)

Meier, Torsten; Pasenow, Bernhard; Duc, Huynh Thanh; Vu, Quang Tuyen; Haug, Hartmut; Koch, Stephan W.

2007-02-01

Employing the quantum interference among one- and two-photon excitations induced by ultrashort two-color laser pulses it is possible to generate charge and spin currents in semiconductors and semiconductor nanostructures on femtosecond time scales. Here, it is reviewed how the excitation process and the dynamics of such photocurrents can be described on the basis of a microscopic many-body theory. Numerical solutions of the semiconductor Bloch equations (SBE) provide a detailed description of the time-dependent material excitations. Applied to the case of photocurrents, numerical solutions of the SBE for a two-band model including many-body correlations on the second-Born Markov level predict an enhanced damping of the spin current relative to that of the charge current. Interesting effects are obtained when the scattering processes are computed beyond the Markovian limit. Whereas the overall decay of the currents is basically correctly described already within the Markov approximation, quantum-kinetic calculations show that memory effects may lead to additional oscillatory signatures in the current transients. When transitions to coupled heavy- and light-hole valence bands are incorporated into the SBE, additional charge and spin currents, which are not described by the two-band model, appear.

Designing non-Hermitian dynamics for conservative state evolution on the Bloch sphere

Science.gov (United States)

Yu, Sunkyu; Piao, Xianji; Park, Namkyoo

2018-03-01

An evolution on the Bloch sphere is the fundamental state transition, including optical polarization controls and qubit operations. Conventional evolution of a polarization state or qubit is implemented within a closed system that automatically satisfies energy conservation from the Hermitian formalism. Although particular forms of static non-Hermitian Hamiltonians, such as parity-time-symmetric Hamiltonians, allow conservative states in an open system, the criteria for the energy conservation in a dynamical open system have not been fully explored. Here, we derive the condition of conservative state evolution in open-system dynamics and its inverse design method, by developing the non-Hermitian modification of the Larmor precession equation. We show that the geometrically designed locus on the Bloch sphere can be realized by different forms of dynamics, leading to the isolocus family of non-Hermitian dynamics. This increased degree of freedom allows the complementary phenomena of error-robust and highly sensitive evolutions on the Bloch sphere, which could be applicable to stable polarizers, quantum gates, and optimized sensors in dynamical open systems.

Bloch Oscillations in the Chains of Artificial Atoms Dressed with Photons

Directory of Open Access Journals (Sweden)

Ilay Levie

2018-06-01

Full Text Available We present a model of one-dimensional chain of two-level artificial atoms driven with DC field and quantum light simultaneously in a strong coupling regime. The interaction of atoms with light leads to electron-photon entanglement (dressing of the atoms with light. The driving via dc field leads to the Bloch oscillations (BO in the chain of dressed atoms. We consider the mutual influence of dressing and BO and show that scenario of oscillations dramatically differs from predicted by the Jaynes-Cummings and Bloch-Zener models. We study the evolution of the population inversion, tunneling current, photon probability distribution, mean number of photons, and photon number variance, and show the influence of BO on the quantum-statistical characteristics of light. For example, the collapse-revivals picture and vacuum Rabi-oscillations are strongly modulated with Bloch frequency. As a result, quantum properties of light and degree of electron-photon entanglement become controllable via adiabatic dc field turning. On the other hand, the low-frequency tunneling current depends on the quantum light statistics (in particular, for coherent initial state it is modulated accordingly the collapse-revivals picture. The developed model is universal with respect to the physical origin of artificial atom and frequency range of atom-light interaction. The model is adapted to the 2D-heterostructures (THz frequencies, semiconductor quantum dots (optical range, and Josephson junctions (microwaves. The data for numerical simulations are taken from recently published experiments. The obtained results open a new way in quantum state engineering and nano-photonic spectroscopy.

Self-consistent Maxwell-Bloch model of quantum-dot photonic-crystal-cavity lasers

Science.gov (United States)

Cartar, William; Mørk, Jesper; Hughes, Stephen

2017-08-01

We present a powerful computational approach to simulate the threshold behavior of photonic-crystal quantum-dot (QD) lasers. Using a finite-difference time-domain (FDTD) technique, Maxwell-Bloch equations representing a system of thousands of statistically independent and randomly positioned two-level emitters are solved numerically. Phenomenological pure dephasing and incoherent pumping is added to the optical Bloch equations to allow for a dynamical lasing regime, but the cavity-mediated radiative dynamics and gain coupling of each QD dipole (artificial atom) is contained self-consistently within the model. These Maxwell-Bloch equations are implemented by using Lumerical's flexible material plug-in tool, which allows a user to define additional equations of motion for the nonlinear polarization. We implement the gain ensemble within triangular-lattice photonic-crystal cavities of various length N (where N refers to the number of missing holes), and investigate the cavity mode characteristics and the threshold regime as a function of cavity length. We develop effective two-dimensional model simulations which are derived after studying the full three-dimensional passive material structures by matching the cavity quality factors and resonance properties. We also demonstrate how to obtain the correct point-dipole radiative decay rate from Fermi's golden rule, which is captured naturally by the FDTD method. Our numerical simulations predict that the pump threshold plateaus around cavity lengths greater than N =9 , which we identify as a consequence of the complex spatial dynamics and gain coupling from the inhomogeneous QD ensemble. This behavior is not expected from simple rate-equation analysis commonly adopted in the literature, but is in qualitative agreement with recent experiments. Single-mode to multimode lasing is also observed, depending on the spectral peak frequency of the QD ensemble. Using a statistical modal analysis of the average decay rates, we also

Electric dipoles on the Bloch sphere

OpenAIRE

Vutha, Amar C.

2014-01-01

The time evolution of a two-level quantum mechanical system can be geometrically described using the Bloch sphere. By mapping the Bloch sphere evolution onto the dynamics of oscillating electric dipoles, we provide a physically intuitive link between classical electromagnetism and the electric dipole transitions of atomic & molecular physics.

Finite-element discretization of 3D energy-transport equations for semiconductors

Energy Technology Data Exchange (ETDEWEB)

Gadau, Stephan

2007-07-01

In this thesis a mathematical model was derived that describes the charge and energy transport in semiconductor devices like transistors. Moreover, numerical simulations of these physical processes are performed. In order to accomplish this, methods of theoretical physics, functional analysis, numerical mathematics and computer programming are applied. After an introduction to the status quo of semiconductor device simulation methods and a brief review of historical facts up to now, the attention is shifted to the construction of a model, which serves as the basis of the subsequent derivations in the thesis. Thereby the starting point is an important equation of the theory of dilute gases. From this equation the model equations are derived and specified by means of a series expansion method. This is done in a multi-stage derivation process, which is mainly taken from a scientific paper and which does not constitute the focus of this thesis. In the following phase we specify the mathematical setting and make precise the model assumptions. Thereby we make use of methods of functional analysis. Since the equations we deal with are coupled, we are concerned with a nonstandard problem. In contrary, the theory of scalar elliptic equations is established meanwhile. Subsequently, we are preoccupied with the numerical discretization of the equations. A special finite-element method is used for the discretization. This special approach has to be done in order to make the numerical results appropriate for practical application. By a series of transformations from the discrete model we derive a system of algebraic equations that are eligible for numerical evaluation. Using self-made computer programs we solve the equations to get approximate solutions. These programs are based on new and specialized iteration procedures that are developed and thoroughly tested within the frame of this research work. Due to their importance and their novel status, they are explained and

Electric dipoles on the Bloch sphere

International Nuclear Information System (INIS)

Vutha, Amar C

2015-01-01

The time evolution of a two-level quantum mechanical system can be geometrically described using the Bloch sphere. By mapping the Bloch sphere evolution onto the dynamics of oscillating electric dipoles, we provide a physically intuitive link between classical electromagnetism and the electric dipole transitions of atomic and molecular physics. (paper)

Maximum Entropy Closure of Balance Equations for Miniband Semiconductor Superlattices

Directory of Open Access Journals (Sweden)

Luis L. Bonilla

2016-07-01

Full Text Available Charge transport in nanosized electronic systems is described by semiclassical or quantum kinetic equations that are often costly to solve numerically and difficult to reduce systematically to macroscopic balance equations for densities, currents, temperatures and other moments of macroscopic variables. The maximum entropy principle can be used to close the system of equations for the moments but its accuracy or range of validity are not always clear. In this paper, we compare numerical solutions of balance equations for nonlinear electron transport in semiconductor superlattices. The equations have been obtained from Boltzmann–Poisson kinetic equations very far from equilibrium for strong fields, either by the maximum entropy principle or by a systematic Chapman–Enskog perturbation procedure. Both approaches produce the same current-voltage characteristic curve for uniform fields. When the superlattices are DC voltage biased in a region where there are stable time periodic solutions corresponding to recycling and motion of electric field pulses, the differences between the numerical solutions produced by numerically solving both types of balance equations are smaller than the expansion parameter used in the perturbation procedure. These results and possible new research venues are discussed.

The transmission factor of a bloch wall for spin waves whose wave vector is perpendicular to the wall (1961); Facteur de transmission d'une paroi de bloch pour des ondes de spin de vecteur d'onde normal a la paroi (1961)

Energy Technology Data Exchange (ETDEWEB)

Boutron, F [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1961-07-01

When, for a ferromagnetic, the anisotropic energy takes the form E= K sin{sup 2} {alpha}, the study of the propagation of spin waves of low energy across a Bloch wall leads to a one-dimensional Schrodinger equation in which is found a potential well which has the remarkable property of being completely transparent for all values of the incident wave energy. (author) [French] Dans un ferromagnetique, lorsque la densite d'energie d'anisotropie est de la forme E= K sin{sup 2} {alpha}, l'etude de la propagation des ondes de spin de faible energie a travers une paroi de Bloch, conduit a une equation de Schrodinger a une dimension, dans laquelle figure un puits de potentiel qui a la propriete remarquable d'etre completement transparent quelle que soit l'energie de l'onde incidente. (auteur)

On history and salvation in Emmanuel Levinas and Ernst Bloch

African Journals Online (AJOL)

p1243322

“Chronos” who devours his own children.13 In addition to this, one would invert ... death” against Bloch, one could argue that Bloch, in effect, is glorifying death .... fantasy or wishful thinking) to Bloch's belief that in a humanised world the.

Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field

Energy Technology Data Exchange (ETDEWEB)

Wang, C., E-mail: cwang@mail.sim.ac.cn; Wang, F.; Cao, J. C., E-mail: jccao@mail.sim.ac.cn [Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China)

2014-09-01

Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation.

Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field

International Nuclear Information System (INIS)

Wang, C.; Wang, F.; Cao, J. C.

2014-01-01

Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation

Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field.

Science.gov (United States)

Wang, C; Wang, F; Cao, J C

2014-09-01

Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation.

Composition operators between Bloch type spaces and Zygmund ...

Indian Academy of Sciences (India)

MS received 1 September 2009; revised 31 March 2011. Abstract. The boundedness and compactness of composition operators between. Bloch type spaces and Zygmund spaces of holomorphic functions in the unit ball are characterized in the paper. Keywords. Composition operator; Bloch type space; Zygmund space. 1.

The discretized Schroedinger equation and simple models for semiconductor quantum wells

International Nuclear Information System (INIS)

Boykin, Timothy B; Klimeck, Gerhard

2004-01-01

The discretized Schroedinger equation is one of the most commonly employed methods for solving one-dimensional quantum mechanics problems on the computer, yet many of its characteristics remain poorly understood. The differences with the continuous Schroedinger equation are generally viewed as shortcomings of the discrete model and are typically described in purely mathematical terms. This is unfortunate since the discretized equation is more productively viewed from the perspective of solid-state physics, which naturally links the discrete model to realistic semiconductor quantum wells and nanoelectronic devices. While the relationship between the discrete model and a one-dimensional tight-binding model has been known for some time, the fact that the discrete Schroedinger equation admits analytic solutions for quantum wells has gone unnoted. Here we present a solution to this new analytically solvable problem. We show that the differences between the discrete and continuous models are due to their fundamentally different bandstructures, and present evidence for our belief that the discrete model is the more physically reasonable one

Bloch-Siegert shift in Dirac-Weyl fermionic systems

Science.gov (United States)

Kumar, Upendra; Kumar, Vipin; Enamullah, Setlur, Girish S.

2018-04-01

The Bloch-Siegert shift is a phenomenon in quantum optics, typically seen in two-level systems, when the driving field is sufficiently strong. The inclusion of frequency doubling effect (counter rotating term) in the conventional rotating wave approximation (RWA) changes the resonance condition thereby producing a rather small shift in the resonance condition, which is known as the Bloch-Siegert shift (BSS). Rabi oscillations in Dirac-Weyl fermionic systems exhibit anomalous behavior far from resonance, called anomalous Rabi oscillations. Therefore, in the present work, we study the phenomenon of the Bloch-Siegert shift in Weyl semimetal and topological insulator (TI) far from resonance, called anomalous Bloch-Siegert shift (ABSS). It is seen that the change in the resonance condition of anomalous Rabi oscillations is drastic in Weyl semimetal and TI. The ABSS in Weyl semimetals is highly anisotropic, whereas it is isotropic in TI. In case of TI, it is the Chern number which plays a crucial role to produce substantial change in the ABSS.

Ultrafast dynamics of laser-pulse excited semiconductors: non-Markovian quantum kinetic equations with nonequilibrium correlations

Directory of Open Access Journals (Sweden)

V.V.Ignatyuk

2004-01-01

Full Text Available Non-Markovian kinetic equations in the second Born approximation are derived for a two-zone semiconductor excited by a short laser pulse. Both collision dynamics and running nonequilibrium correlations are taken into consideration. The energy balance and relaxation of the system to equilibrium are discussed. Results of numerical solution of the kinetic equations for carriers and phonons are presented.

The basic properties of Bloch functions

Directory of Open Access Journals (Sweden)

Joseph A. Cima

1979-01-01

Full Text Available A Bloch function f(z is an analytic function on the unit disc whose derivative grows no faster than a constant times the reciprocal of the distance from z to ∂. We reprove here the basic analytic facts concerning Bloch functions. We establish the Banach space structure and collect facts concerning the geometry of the space. We indicate duality relationships, and known isomorphic correspondences are given. We give a rather complete list of references for further study in the case of several variables.

The Bloch wave operator: generalizations and applications: Part I. The time-independent case

CERN Document Server

Killingbeck, J P

2003-01-01

This is part 1 of a two-part review on wave operator theory and methods. The basic theory of the time-independent wave operator is presented in terms of partitioned matrix theory for the benefit of general readers, with a discussion of the links between the matrix and projection operator approaches. The matrix approach is shown to lead to simple derivations of the wave operators and effective Hamiltonians of Loewdin, Bloch, Des Cloizeaux and Kato as well as to some associated variational forms. The principal approach used throughout stresses the solution of the nonlinear equation for the reduced wave operator, leading to the construction of the effective Hamiltonians of Bloch and of Des Cloizeaux. Several mathematical techniques which are useful in implementing this approach are explained, some of them being relatively little known in the area of wave operator calculations. The theoretical discussion is accompanied by several specimen numerical calculations which apply the described techniques to a selection ...

Skyrmion clusters from Bloch lines in ferromagnetic films

KAUST Repository

Garanin, Dmitry A.

2017-12-29

Conditions under which various skyrmion objects emerge in experiments on thin magnetic films remain largely unexplained. We investigate numerically centrosymmetric spin lattices in films of finite thickness with ferromagnetic exchange, magnetic anisotropy, and dipole-dipole interaction. Evolution of labyrinth domains into compact topological structures on application of the magnetic field is found to be governed by the configuration of Bloch lines inside domain walls. Depending on the combination of Bloch lines, the magnetic domains evolve into individual skyrmions, biskyrmions, or more complex topological objects. While the geometry of such objects is sensitive to the parameters, their topological charge is uniquely determined by the topological charge of Bloch lines inside the magnetic domain from which the object emerges.

Bloch-mode analysis for retrieving effective parameters of metamaterials

DEFF Research Database (Denmark)

Andryieuski, Andrei; Ha, Sangwoo; Sukhorukov, Andrey A.

2012-01-01

by our method with a high accuracy. We employ both surface and volume averaging of the electromagnetic fields of the dominating (fundamental) Bloch modes to determine the Bloch and wave impedances, respectively. We discuss how this method works for several characteristic examples, and demonstrate...

Bloch walls in a nickel single crystal

International Nuclear Information System (INIS)

Peters, J.; Treimer, W.

2001-01-01

We present a consistent theory for the dependence of the magnetic structure in bulk samples on external static magnetic fields and corresponding experimental results. We applied the theory of micromagnetism to this crystal and calculated the Bloch wall thickness as a function of external magnetic fields. The theoretical results agree well with the experimental data, so that the Bloch wall thickness of a 71 deg. nickel single crystal was definitely determined with some hundred of nanometer

Rate equation analysis and non-Hermiticity in coupled semiconductor laser arrays

Science.gov (United States)

Gao, Zihe; Johnson, Matthew T.; Choquette, Kent D.

2018-05-01

Optically coupled semiconductor laser arrays are described by coupled rate equations. The coupled mode equations and carrier densities are included in the analysis, which inherently incorporate the carrier-induced nonlinearities including gain saturation and amplitude-phase coupling. We solve the steady-state coupled rate equations and consider the cavity frequency detuning and the individual laser pump rates as the experimentally controlled variables. We show that the carrier-induced nonlinearities play a critical role in the mode control, and we identify gain contrast induced by cavity frequency detuning as a unique mechanism for mode control. Photon-mediated energy transfer between cavities is also discussed. Parity-time symmetry and exceptional points in this system are studied. Unbroken parity-time symmetry can be achieved by judiciously combining cavity detuning and unequal pump rates, while broken symmetry lies on the boundary of the optical locking region. Exceptional points are identified at the intersection between broken symmetry and unbroken parity-time symmetry.

Non-Bloch decay of Rabi oscillations in liquid state NMR

Science.gov (United States)

Chakrabarti, Arnab; Bhattacharyya, Rangeet

2018-03-01

Rabi oscillations are known to exhibit non-Bloch behaviour in anisotropic media. In this letter, we report an experimental observation of non-Bloch decay of Rabi oscillations in isotropic liquid state NMR. To avoid the dephasing due to the radio-frequency inhomogeneities, we develop a modified version of the rotary echo protocol and use it to determine the decay rates of Rabi oscillations. We find that the measured decay rates are proportional to the square of the Rabi frequencies and the proportionality constant is of the order of tens of picoseconds. Further, we show that this non-Bloch nature of the decay rates becomes less prominent with increasing temperature. The implications of the presence of non-Bloch decay rates in liquid state NMR in the context of ensemble quantum computing are also discussed.

Modeling Bloch oscillations in nanoscale Josephson junctions

Science.gov (United States)

Vora, Heli; Kautz, R. L.; Nam, S. W.; Aumentado, J.

2018-01-01

Bloch oscillations in nanoscale Josephson junctions with a Coulomb charging energy comparable to the Josephson coupling energy are explored within the context of a model previously considered by Geigenmüller and Schön that includes Zener tunneling and treats quasiparticle tunneling as an explicit shot-noise process. The dynamics of the junction quasicharge are investigated numerically using both Monte Carlo and ensemble approaches to calculate voltage-current characteristics in the presence of microwaves. We examine in detail the origin of harmonic and subharmonic Bloch steps at dc biases I = (n/m)2ef induced by microwaves of frequency f and consider the optimum parameters for the observation of harmonic (m = 1) steps. We also demonstrate that the GS model allows a detailed semiquantitative fit to experimental voltage-current characteristics previously obtained at the Chalmers University of Technology, confirming and strengthening the interpretation of the observed microwave-induced steps in terms of Bloch oscillations. PMID:29577106

Quantum qubit measurement by a quantum point contact with a quantum Langevin equation approach

International Nuclear Information System (INIS)

Dong, Bing; Lei, X.L.; Horing, N.J.M.; Cui, H.L.

2007-01-01

We employ a microscopic quantum Heisenberg-Langevin equation approach to establish a set of quantum Bloch equations for a two-level system (coupled quantum dots) capacitively coupled to a quantum point contact (QPC). The resulting Bloch equations facilitate our analysis of qubit relaxation and decoherence in coupled quantum dots induced by measurement processes at arbitrary bias-voltage and temperature. We also examine the noise spectrum of the meter output current for a symmetric qubit. These results help resolve a recent debate about a quantum oscillation peak in the noise spectrum. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Bloch spaces of holomorphic functions in the polydisk

Directory of Open Access Journals (Sweden)

Anahit Harutyunyan

2007-01-01

Full Text Available This work is an introduction to anisotropic spaces of holomorphic functions, which have ω-weight and are generalizations of Bloch spaces to a polydisc. We prove that these classes form an algebra and are invariant with respect to monomial multiplication. Some theorems on projection and diagonal mapping are proved. We establish a description of (Ap(ω* (or (Hp(ω* via the Bloch classes for all 0

Quasi-periodic Schroedinger operators in one dimension, absolutely continuous spectra, Bloch waves, and integrable Hamiltonian systems

International Nuclear Information System (INIS)

Chierchia, L.

1986-01-01

In the first chapter, the eigenvalue problem for a periodic Schroedinger operator, Lf = (-d 2 /dx 2 + v)f = Ef, is viewed as a two-dimensional Hamiltonian system which is integrable in the sense of Arnold and Liouville. With the aid of the Floquet-BLoch theory, it is shown that such a system is conjugate to two harmonic oscillators with frequencies α and omega, being the rotation number for L and 2π/omega the period of the potential v. This picture is generalized in the second chapter, to quasi periodic Schroedinger operators, L/sub epsilon/, with highly irrational frequencies (omega 1 , ..., omega/sub d/), which are a small perturbation of periodic operators. In the last chapter, the absolutely continuous spectrum σ/sub ac/ of a general quasi-periodic Schroedinger operators is considered. The Radon-Nikodym derivatives (with respect to Lebesgue measure) of the spectral measures are computed in terms of special independent eigensolutions existing for almost ever E in σ/sub ac/. Finally, it is shown that weak Bloch waves always exist for almost ever E in σ/sub ac/ and the question of the existence of genuine Bloch waves is turned into a regularity problem for a certain nonlinear partial differential equation on a d-dimensional torus

Spin wave vortex from the scattering on Bloch point solitons

Energy Technology Data Exchange (ETDEWEB)

Carvalho-Santos, V.L., E-mail: vagson.carvalho@usach.cl [Instituto Federal de Educação, Ciência e Tecnologia Baiano - Campus Senhor do Bonfim, Km 04 Estrada da Igara, 48970-000 Senhor do Bonfim, Bahia (Brazil); Departamento de Física, Universidad de Santiago de Chile and CEDENNA, Avda. Ecuador 3493, Santiago (Chile); Elías, R.G., E-mail: gabriel.elias@usach.cl [Departamento de Física, Universidad de Santiago de Chile and CEDENNA, Avda. Ecuador 3493, Santiago (Chile); Nunez, A.S., E-mail: alnunez@dfi.uchile.cl [Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Casilla 487-3, Santiago (Chile)

2015-12-15

The interaction of a spin wave with a stationary Bloch point is studied. The topological non-trivial structure of the Bloch point manifests in the propagation of spin waves endowing them with a gauge potential that resembles the one associated with the interaction of a magnetic monopole and an electron. By pursuing this analogy, we are led to the conclusion that the scattering of spin waves and Bloch points is accompanied by the creation of a magnon vortex. Interference between such a vortex and a plane wave leads to dislocations in the interference pattern that can be measurable by means of magnon holography.

Modeling Bloch oscillations in ultra-small Josephson junctions

Science.gov (United States)

Vora, Heli; Kautz, Richard; Nam, Sae Woo; Aumentado, Jose

In a seminal paper, Likharev et al. developed a theory for ultra-small Josephson junctions with Josephson coupling energy (Ej) less than the charging energy (Ec) and showed that such junctions demonstrate Bloch oscillations which could be used to make a fundamental current standard that is a dual of the Josephson volt standard. Here, based on the model of Geigenmüller and Schön, we numerically calculate the current-voltage relationship of such an ultra-small junction which includes various error processes present in a nanoscale Josephson junction such as random quasiparticle tunneling events and Zener tunneling between bands. This model allows us to explore the parameter space to see the effect of each process on the width and height of the Bloch step and serves as a guide to determine whether it is possible to build a quantum current standard of a metrological precision using Bloch oscillations.

Semiconductor device simulation by a new method of solving poisson, Laplace and Schrodinger equations

International Nuclear Information System (INIS)

Sharifi, M. J.; Adibi, A.

2000-01-01

In this paper, we have extended and completed our previous work, that was introducing a new method for finite differentiation. We show the applicability of the method for solving a wide variety of equations such as poisson, Laplace and Schrodinger. These equations are fundamental to the most semiconductor device simulators. In a section, we solve the Shordinger equation by this method in several cases including the problem of finding electron concentration profile in the channel of a HEMT. In another section, we solve the Poisson equation by this method, choosing the problem of SBD as an example. Finally we solve the Laplace equation in two dimensions and as an example, we focus on the VED. In this paper, we have shown that, the method can get stable and precise results in solving all of these problems. Also the programs which have been written based on this method become considerably faster, more clear, and more abstract

Nonlinear Bloch waves in metallic photonic band-gap filaments

International Nuclear Information System (INIS)

Kaso, Artan; John, Sajeev

2007-01-01

We demonstrate the occurrence of nonlinear Bloch waves in metallic photonic crystals (PCs). These periodically structured filaments are characterized by an isolated optical pass band below an effective plasma gap. The pass band occurs in a frequency range where the metallic filament exhibits a negative, frequency-dependent dielectric function and absorption loss. The metallic losses are counterbalanced by gain in two models of inhomogeneously broadened nonlinear oscillators. In the first model, we consider close-packed quantum dots that fill the void regions of a two-dimensional (2D) metallic PC, and whose inhomogeneously broadened emission spectrum spans the original optical pass band of the bare filament. In the second model, we consider thin (10-50 nm) layers of inhomogeneously broadened two-level resonators, with large dipole oscillator strength, that cover the interior surfaces of 2D metallic (silver and tungsten) PCs. These may arise from localized surface plasmon resonances due to small metal particles or an otherwise rough metal surface. For simplicity, we treat electromagnetic modes with electric field perpendicular to the plane of metal periodicity. In both models, a pumping threshold of the resonators is found, above which periodic nonlinear solutions of Maxwell's equations with purely real frequency within the optical pass band emerge. These nonlinear Bloch waves exhibit a laserlike input pumping to output amplitude characteristic. For strong surface resonances, these nonlinear waves may play a role in light emission from a hot tungsten (suitably microstructured) filament

Nonlinear Bloch waves in metallic photonic band-gap filaments

Science.gov (United States)

Kaso, Artan; John, Sajeev

2007-11-01

We demonstrate the occurrence of nonlinear Bloch waves in metallic photonic crystals (PCs). These periodically structured filaments are characterized by an isolated optical pass band below an effective plasma gap. The pass band occurs in a frequency range where the metallic filament exhibits a negative, frequency-dependent dielectric function and absorption loss. The metallic losses are counterbalanced by gain in two models of inhomogeneously broadened nonlinear oscillators. In the first model, we consider close-packed quantum dots that fill the void regions of a two-dimensional (2D) metallic PC, and whose inhomogeneously broadened emission spectrum spans the original optical pass band of the bare filament. In the second model, we consider thin (10 50 nm) layers of inhomogeneously broadened two-level resonators, with large dipole oscillator strength, that cover the interior surfaces of 2D metallic (silver and tungsten) PCs. These may arise from localized surface plasmon resonances due to small metal particles or an otherwise rough metal surface. For simplicity, we treat electromagnetic modes with electric field perpendicular to the plane of metal periodicity. In both models, a pumping threshold of the resonators is found, above which periodic nonlinear solutions of Maxwell’s equations with purely real frequency within the optical pass band emerge. These nonlinear Bloch waves exhibit a laserlike input pumping to output amplitude characteristic. For strong surface resonances, these nonlinear waves may play a role in light emission from a hot tungsten (suitably microstructured) filament.

Self-consistent Maxwell-Bloch model of quantum-dot photonic-crystal-cavity lasers

DEFF Research Database (Denmark)

Cartar, William; Mørk, Jesper; Hughes, Stephen

2017-01-01

-level emitters are solved numerically. Phenomenological pure dephasing and incoherent pumping is added to the optical Bloch equations to allow for a dynamical lasing regime, but the cavity-mediated radiative dynamics and gain coupling of each QD dipole (artificial atom) is contained self-consistently within......-mode to multimode lasing is also observed, depending on the spectral peak frequency of the QD ensemble. Using a statistical modal analysis of the average decay rates, we also show how the average radiative decay rate decreases as a function of cavity size. In addition, we investigate the role of structural disorder...

Orbital magnetism of Bloch electrons I. General formula

International Nuclear Information System (INIS)

Ogata, Masao; Fukuyama, Hidetoshi

2015-01-01

We derive an exact formula of orbital susceptibility expressed in terms of Bloch wave functions, starting from the exact one-line formula by Fukuyama in terms of Green's functions. The obtained formula contains four contributions: (1) Landau-Peierls susceptibility, (2) interband contribution, (3) Fermi surface contribution, and (4) contribution from occupied states. Except for the Landau-Peierls susceptibility, the other three contributions involve the crystal-momentum derivatives of Bloch wave functions. Physical meaning of each term is clarified. The present formula is simplified compared with those obtained previously by Hebborn et al. Based on the formula, it is seen first of all that diamagnetism from core electrons and Van Vleck susceptibility are the only contributions in the atomic limit. The band effects are then studied in terms of linear combination of atomic orbital treating overlap integrals between atomic orbitals as a perturbation and the itinerant feature of Bloch electrons in solids are clarified systematically for the first time. (author)

Current responsivity of semiconductor superlattice THz-photon detectors

DEFF Research Database (Denmark)

Ignatov, Anatoly A.; Jauho, Antti-Pekka

1999-01-01

The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed for curr......The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed...... for currently available superlattice diodes show that both the magnitudes and the roll-off frequencies of the responsivity are strongly influenced by an excitation of hybrid plasma-Bloch oscillations which are found to be eigenmodes of the system in the THz-frequency band. The expected room temperature values...... of the responsivity (2–3 A/W in the 1–3 THz-frequency band) range up to several percents of the quantum efficiency e/[h-bar] omega of an ideal superconductor tunnel junction detector. Properly designed semiconductor superlattice detectors may thus demonstrate better room temperature THz-photon responsivity than...

A formula for the Bloch vector of some Lindblad quantum systems

International Nuclear Information System (INIS)

Salgado, D.; Sanchez-Gomez, J.L.

2004-01-01

Using the Bloch representation of an N-dimensional quantum system and immediate results from quantum stochastic calculus, we establish a closed formula for the Bloch vector, hence also for the density operator, of a quantum system following a Lindblad evolution with selfadjoint Lindblad operators

From Bloch to random lasing in ZnO self-assembled nanostructures

DEFF Research Database (Denmark)

Garcia-Fernandez, Pedro David; Cefe, López

2013-01-01

In this paper, we present measurements on UV lasing in ZnO ordered and disordered nanostructures. Bloch lasing is achieved in the ordered structures by exploiting very low group-velocity Bloch modes in ZnO photonic crystals. In the second case, random lasing is observed in ZnO photonic glasses. We...... study the lasing threshold in both cases and its dependence on the structural parameters. Finally, we present the transition from Bloch to random lasing by deliberately doping a ZnO inverse photonic crystal with a controlled amount of lattice vacancies effectively converting it into a translationally...

Felix Bloch (1905–1983)

Indian Academy of Sciences (India)

IAS Admin

1905, to Jewish parents, Gustav and Agnes Bloch. The year he ... Both the student and the supervisor were in their 20's, separated by 5– ... up on the West Coast, in the University of Stanford, where he stayed for the rest of his academic life.

Properties of Floquet-Bloch space harmonics in 1D periodic magneto-dielectric structures

DEFF Research Database (Denmark)

Breinbjerg, O.

2012-01-01

Recent years have witnessed a significant research interest in Floquet-Bloch analysis for determining the homogenized permittivity and permeability of metamaterials consisting of periodic structures. This work investigates fundamental properties of the Floquet-Bloch space harmonics in a 1......-dimensional magneto-dielectric lossless structure supporting a transverse-electric-magnetic Floquet-Bloch wave; in particular, the space harmonic permittivity and permeability, as well as the space harmonic Poynting vector....

Computational Modeling of Bloch Surface Waves in One-Dimensional Periodic and Aperiodic Multilayer Structures

Science.gov (United States)

Koju, Vijay

Photonic crystals and their use in exciting Bloch surface waves have received immense attention over the past few decades. This interest is mainly due to their applications in bio-sensing, wave-guiding, and other optical phenomena such as surface field enhanced Raman spectroscopy. Improvement in numerical modeling techniques, state of the art computing resources, and advances in fabrication techniques have also assisted in growing interest in this field. The ability to model photonic crystals computationally has benefited both the theoretical as well as experimental communities. It helps the theoretical physicists in solving complex problems which cannot be solved analytically and helps to acquire useful insights that cannot be obtained otherwise. Experimentalists, on the other hand, can test different variants of their devices by changing device parameters to optimize performance before fabrication. In this dissertation, we develop two commonly used numerical techniques, namely transfer matrix method, and rigorous coupled wave analysis, in C++ and MATLAB, and use two additional software packages, one open-source and another commercial, to model one-dimensional photonic crystals. Different variants of one-dimensional multilayered structures such as perfectly periodic dielectric multilayers, quasicrystals, aperiodic multilayer are modeled, along with one-dimensional photonic crystals with gratings on the top layer. Applications of Bloch surface waves, along with new and novel aperiodic dielectric multilayer structures that support Bloch surface waves are explored in this dissertation. We demonstrate a slow light configuration that makes use of Bloch Surface Waves as an intermediate excitation in a double-prism tunneling configuration. This method is simple compared to the more usual techniques for slowing light using the phenomenon of electromagnetically induced transparency in atomic gases or doped ionic crystals operated at temperatures below 4K. Using a semi

Weighted Composition Operators from Hardy Spaces into Logarithmic Bloch Spaces

Directory of Open Access Journals (Sweden)

Flavia Colonna

2012-01-01

Full Text Available The logarithmic Bloch space Blog⁡ is the Banach space of analytic functions on the open unit disk 𝔻 whose elements f satisfy the condition ∥f∥=sup⁡z∈𝔻(1-|z|2log⁡  (2/(1-|z|2|f'(z|<∞. In this work we characterize the bounded and the compact weighted composition operators from the Hardy space Hp (with 1≤p≤∞ into the logarithmic Bloch space. We also provide boundedness and compactness criteria for the weighted composition operator mapping Hp into the little logarithmic Bloch space defined as the subspace of Blog⁡ consisting of the functions f such that lim⁡|z|→1(1-|z|2log⁡  (2/(1-|z|2|f'(z|=0.

Bloch wave deafness and modal conversion at a phononic crystal boundary

Directory of Open Access Journals (Sweden)

Vincent Laude

2011-12-01

Full Text Available We investigate modal conversion at the boundary between a homogeneous incident medium and a phononic crystal, with consideration of the impact of symmetry on the excitation of Bloch waves. We give a quantitative criterion for the appearance of deaf Bloch waves, which are antisymmetric with respect to a symmetry axis of the phononic crystal, in the frame of generalized Fresnel formulas for reflection and transmission at the phononic crystal boundary. This criterion is used to index Bloch waves in the complex band structure of the phononic crystal, for directions of incidence along a symmetry axis. We argue that within deaf frequency ranges transmission is multi-exponential, as it is within frequency band gaps.

Nonlinear tunneling of bright and dark rogue waves in combined nonlinear Schrödinger and Maxwell-Bloch systems

Science.gov (United States)

Raju, Thokala Soloman; Pal, Ritu

2018-05-01

We derive the analytical rogue wave solutions for the generalized inhomogeneous nonlinear Schrödinger-Maxwell-Bloch (GINLS-MB) equation describing the pulse propagation in erbium-doped fibre system. Then by suitably choosing the inhomogeneous parameters, we delineate the tunneling properties of rogue waves through dispersion and nonlinearity barriers or wells. Finally, we demonstrate the propagating characteristics of optical solitons by considering their tunneling through periodic barriers by the proper choice of external potential.

Electroweak evolution equations

International Nuclear Information System (INIS)

Ciafaloni, Paolo; Comelli, Denis

2005-01-01

Enlarging a previous analysis, where only fermions and transverse gauge bosons were taken into account, we write down infrared-collinear evolution equations for the Standard Model of electroweak interactions computing the full set of splitting functions. Due to the presence of double logs which are characteristic of electroweak interactions (Bloch-Nordsieck violation), new infrared singular splitting functions have to be introduced. We also include corrections related to the third generation Yukawa couplings

Mechanical Properties of Laminate Materials: From Surface Waves to Bloch Oscillations

DEFF Research Database (Denmark)

Liang, Z.; Willatzen, Morten; Christensen, Johan

2015-01-01

for designing Bloch oscillations in classical plate structures and show how mechanical Bloch oscillations can be generated in arrays of solid plates when the modal wavelength is gradually reduced. The design recipe describes how Bloch oscillations in classical structures of arbitrary dimensions can be generated......We propose hitherto unexplored and fully analytical insights into laminate elastic materials in a true condensed-matter-physics spirit. Pure mechanical surface waves that decay as evanescent waves from the interface are discussed, and we demonstrate how these designer Scholte waves are controlled......, and we demonstrate this numerically for structures with millimeter and centimeter dimensions in the kilohertz to megahertz range. Analytical predictions agree entirely with full wave simulations showing how elastodynamics can mimic quantum-mechanical condensed-matter phenomena....

The Bloch Approximation in Periodically Perforated Media

International Nuclear Information System (INIS)

Conca, C.; Gomez, D.; Lobo, M.; Perez, E.

2005-01-01

We consider a periodically heterogeneous and perforated medium filling an open domain Ω of R N . Assuming that the size of the periodicity of the structure and of the holes is O(ε),we study the asymptotic behavior, as ε → 0, of the solution of an elliptic boundary value problem with strongly oscillating coefficients posed in Ω ε (Ω ε being Ω minus the holes) with a Neumann condition on the boundary of the holes. We use Bloch wave decomposition to introduce an approximation of the solution in the energy norm which can be computed from the homogenized solution and the first Bloch eigenfunction. We first consider the case where Ωis R N and then localize the problem for abounded domain Ω, considering a homogeneous Dirichlet condition on the boundary of Ω

Introductory semiconductor device physics

CERN Document Server

Parker, Greg

2004-01-01

ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

Microscopic theory of coherent and incoherent optical properties of semiconductor heterostructures

Energy Technology Data Exchange (ETDEWEB)

Schaefer, Martin

2008-09-02

An important question is whether there is a regime in which lasing from indirect semiconductors is possible. Thus, we discuss this question in this thesis. It is shown that under incoherent emission conditions it is possible to create an exciton condensate in multiple-quantum-well (MQW) systems. The influence of a MQW structure on the exciton lifetime is investigated. For the description of the light-matter interaction of a QW in the coherent excitation regime, the semiconductor Bloch equation (SBE) are used. The incoherent regime is described by the semiconductor luminescence equations (SLE). In principle it is even possible to couple SBE and SLE. The resulting theory is able to describe interactions between coherent and incoherent processes we investigate both, the coherent and the incoherent light-emission regime. Thus we define the investigated system and introduce the many-body Hamiltonian that describes consistently the light-matter interaction in the classical and the quantum limit. We introduce the SBE that allow to compute the light-matter interaction in the coherent scenario. The extended scattering model is used to investigate the absorption of a Ge QW for different time delays after the excitations. In this context, we analyze whether there is a regime in which optical gain can be realized. Then we apply a transfer-matrix method to include into our calculations the influence of the dielectric environment on the optical response. Thereafter the SLE for a MQW system are introduced. We derive a scheme that allows for decoupling environmental effects from the pure PL-emission properties of the QW. The PL of the actual QW system is obtained by multiplying this filter function and the free-space PL that describes the quantum emission into a medium with spatially constant background-refractive index. It is studied how the MQW-Bragg structure influences the PL-emission properties compared to the emission of a single QW device. As a last feature, it is shown

Bloch-Surface-Polariton-Based Hybrid Nanowire Structure for Subwavelength, Low-Loss Waveguiding

Directory of Open Access Journals (Sweden)

Weijing Kong

2018-03-01

Full Text Available Surface plasmon polaritons (SPPs have been thoroughly studied in the past decades for not only sensing but also waveguiding applications. Various plasmonic device structures have been explored due to their ability to confine their optical mode to the subwavelength level. However, with the existence of metal, the large ohmic loss limits the propagation distance of the SPP and thus the scalability of such devices. Therefore, different hybrid waveguides have been proposed to overcome this shortcoming. Through fine tuning of the coupling between the SPP and a conventional waveguide mode, a hybrid mode could be excited with decent mode confinement and extended propagation distance. As an effective alternative of SPP, Bloch surface waves have been re-investigated more recently for their unique advantages. As is supported in all-dielectric structures, the optical loss for the Bloch surface wave is much lower, which stands for a much longer propagating distance. Yet, the confinement of the Bloch surface wave due to the reflections and refractions in the multilayer structure is not as tight as that of the SPP. In this work, by integrating a periodic multilayer structure that supports the Bloch surface wave with a metallic nanowire structure, a hybrid Bloch surface wave polariton could be excited. With the proposed hybrid nanowire structure, a hybrid mode is demonstrated with the deep subwavelength mode confinement and a propagation distance of tens of microns.

Quantum control and process tomography of a semiconductor quantum dot hybrid qubit.

Science.gov (United States)

Kim, Dohun; Shi, Zhan; Simmons, C B; Ward, D R; Prance, J R; Koh, Teck Seng; Gamble, John King; Savage, D E; Lagally, M G; Friesen, Mark; Coppersmith, S N; Eriksson, Mark A

2014-07-03

The similarities between gated quantum dots and the transistors in modern microelectronics--in fabrication methods, physical structure and voltage scales for manipulation--have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. Although quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for important future applications, such as factoring. Furthermore, scalability and manufacturability are enhanced when qubits are as simple as possible. Previous work has increased the speed of spin qubit rotations by making use of integrated micromagnets, dynamic pumping of nuclear spins or the addition of a third quantum dot. Here we demonstrate a qubit that is a hybrid of spin and charge. It is simple, requiring neither nuclear-state preparation nor micromagnets. Unlike previous double-dot qubits, the hybrid qubit enables fast rotations about two axes of the Bloch sphere. We demonstrate full control on the Bloch sphere with π-rotation times of less than 100 picoseconds in two orthogonal directions, which is more than an order of magnitude faster than any other double-dot qubit. The speed arises from the qubit's charge-like characteristics, and its spin-like features result in resistance to decoherence over a wide range of gate voltages. We achieve full process tomography in our electrically controlled semiconductor quantum dot qubit, extracting high fidelities of 85 per cent for X rotations (transitions between qubit states) and 94 per cent for Z rotations (phase accumulation between qubit states).

Finite difference discretization of semiconductor drift-diffusion equations for nanowire solar cells

Science.gov (United States)

Deinega, Alexei; John, Sajeev

2012-10-01

We introduce a finite difference discretization of semiconductor drift-diffusion equations using cylindrical partial waves. It can be applied to describe the photo-generated current in radial pn-junction nanowire solar cells. We demonstrate that the cylindrically symmetric (l=0) partial wave accurately describes the electronic response of a square lattice of silicon nanowires at normal incidence. We investigate the accuracy of our discretization scheme by using different mesh resolution along the radial direction r and compare with 3D (x, y, z) discretization. We consider both straight nanowires and nanowires with radius modulation along the vertical axis. The charge carrier generation profile inside each nanowire is calculated using an independent finite-difference time-domain simulation.

Characterization of anomalous relaxation using the time-fractional Bloch equation and multiple echo T2 *-weighted magnetic resonance imaging at 7 T.

Science.gov (United States)

Qin, Shanlin; Liu, Fawang; Turner, Ian W; Yu, Qiang; Yang, Qianqian; Vegh, Viktor

2017-04-01

To study the utility of fractional calculus in modeling gradient-recalled echo MRI signal decay in the normal human brain. We solved analytically the extended time-fractional Bloch equations resulting in five model parameters, namely, the amplitude, relaxation rate, order of the time-fractional derivative, frequency shift, and constant offset. Voxel-level temporal fitting of the MRI signal was performed using the classical monoexponential model, a previously developed anomalous relaxation model, and using our extended time-fractional relaxation model. Nine brain regions segmented from multiple echo gradient-recalled echo 7 Tesla MRI data acquired from five participants were then used to investigate the characteristics of the extended time-fractional model parameters. We found that the extended time-fractional model is able to fit the experimental data with smaller mean squared error than the classical monoexponential relaxation model and the anomalous relaxation model, which do not account for frequency shift. We were able to fit multiple echo time MRI data with high accuracy using the developed model. Parameters of the model likely capture information on microstructural and susceptibility-induced changes in the human brain. Magn Reson Med 77:1485-1494, 2017. © 2016 International Society for Magnetic Resonance in Medicine. © 2016 International Society for Magnetic Resonance in Medicine.

Optical Effects Induced by Bloch Surface Waves in One-Dimensional Photonic Crystals

Directory of Open Access Journals (Sweden)

Irina V. Soboleva

2018-01-01

Full Text Available The review considers the influence of Bloch surface waves on the optical and magneto-optical effects observed in photonic crystals; for example, the Goos–Hänchen effect, the Faraday effect, optical trapping and so on. Prospects for using Bloch surface waves for spatial light modulation, for controlling the polarization of light, for optical trapping and control of micro-objects are discussed.

Bloch oscillations and accelerated Bose–Einstein condensates in an optical lattice

Energy Technology Data Exchange (ETDEWEB)

Sacchetti, Andrea, E-mail: andrea.sacchetti@unimore.it

2017-01-30

Highlights: • Discrete nonlinear Schrödinger model for accelerated BECs in optical lattices. • Numerical computation of wavefunction BECs dynamics. • Correlation between nonlinearity and the oscillating period of the BEC's center of mass. • Discussion of the validity of the Bloch Theorem for accelerated BECs in an optical lattice. - Abstract: We discuss the method for the measurement of the gravity acceleration g by means of Bloch oscillations of an accelerated BEC in an optical lattice. This method has a theoretical critical point due to the fact that the period of the Bloch oscillations depends, in principle, on the initial shape of the BEC wavepacket. Here, by making use of the nearest-neighbor model for the numerical analysis of the BEC wavefunction, we show that in real experiments the period of the Bloch oscillations does not really depend on the shape of the initial wavepacket and that the relative uncertainty, due to the fact that the initial shape of the wavepacket may be asymmetrical, is smaller than the one due to experimental errors. Furthermore, we also show that the relation between the oscillation period and the scattering length of the BEC's atoms is linear; this fact suggests us a new experimental procedure for the measurement of the scattering length of atoms.

Single-site approximation for the s-f model of antiferromagnetic semiconductors

International Nuclear Information System (INIS)

Takahashi, Masao; Nolting, Wolfgang

2001-01-01

For the s-f model of an antiferromagnetic semiconductor, the effect of the antiferromagnetic ordering of the localized spins on the conduction-electron state is investigated over a wide range of exchange strengths by combining the effective-medium approach with the Green's function in the 2x2 sublattice Bloch function representation. The band splitting due to the reduced magnetic Brillouin zone occurs below the Neel temperature. There is a marked effect of the thermal fluctuation of the antiferromagnetically ordered localized spins on the conduction electron at the energies near the top (bottom) of the lower- (higher-) energy subband

Skyrmion clusters from Bloch lines in ferromagnetic films

KAUST Repository

Garanin, Dmitry A.; Chudnovsky, Eugene M.; Zhang, Xixiang

2017-01-01

anisotropy, and dipole-dipole interaction. Evolution of labyrinth domains into compact topological structures on application of the magnetic field is found to be governed by the configuration of Bloch lines inside domain walls. Depending on the combination

Breakdown of rotational symmetry at semiconductor interfaces; a microscopic description of valence subband mixing

International Nuclear Information System (INIS)

Cortez, S.; Krebs, O.; Voisin, P.

2000-01-01

The recently discovered in-plane optical anisotropy of [001]-grown quantum wells offers a new theoretical and experimental insight into the electronic properties of semiconductor interfaces. We first discuss the coupling of X and Y valence bands due to the breakdown of rotation inversion symmetry at a semiconductor hetero-interface, with special attention to its dependence on effective parameters such as valence band offset. The intracell localization of Bloch functions is explained from simple theoretical arguments and evaluated numerically from a pseudo-potential microscopic model. The role of envelope functions is considered, and we discuss the specific case of non-common atom interfaces. Experimental results and applications to interface characterization are presented. These calculations give a microscopic justification, and establish the limits of the heuristic 'H BF ' model. (author)

Observation of Bloch oscillations in complex PT-symmetric photonic lattices

Science.gov (United States)

Wimmer, Martin; Miri, Mohammed-Ali; Christodoulides, Demetrios; Peschel, Ulf

2015-01-01

Light propagation in periodic environments is often associated with a number of interesting and potentially useful processes. If a crystalline optical potential is also linearly ramped, light can undergo periodic Bloch oscillations, a direct outcome of localized Wannier-Stark states and their equidistant eigenvalue spectrum. Even though these effects have been extensively explored in conservative settings, this is by no means the case in non-Hermitian photonic lattices encompassing both amplification and attenuation. Quite recently, Bloch oscillations have been predicted in parity-time-symmetric structures involving gain and loss in a balanced fashion. While in a complex bulk medium, one intuitively expects that light will typically follow the path of highest amplification, in a periodic system this behavior can be substantially altered by the underlying band structure. Here, we report the first experimental observation of Bloch oscillations in parity-time-symmetric mesh lattices. We show that these revivals exhibit unusual properties like secondary emissions and resonant restoration of PT symmetry. In addition, we present a versatile method for reconstructing the real and imaginary components of the band structure by directly monitoring the light evolution during a cycle of these oscillations. PMID:26639941

A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. II. Spatio-temporal dynamics

Science.gov (United States)

Böhringer, Klaus; Hess, Ortwin

The spatio-temporal dynamics of novel semiconductor lasers is discussed on the basis of a space- and momentum-dependent full time-domain approach. To this means the space-, time-, and momentum-dependent Full-Time Domain Maxwell Semiconductor Bloch equations, derived and discussed in our preceding paper I [K. Böhringer, O. Hess, A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation], are solved by direct numerical integration. Focussing on the device physics of novel semiconductor lasers that profit, in particular, from recent advances in nanoscience and nanotechnology, we discuss the examples of photonic band edge surface emitting lasers (PBE-SEL) and semiconductor disc lasers (SDLs). It is demonstrated that photonic crystal effects can be obtained for finite crystal structures, and leading to a significant improvement in laser performance such as reduced lasing thresholds. In SDLs, a modern device concept designed to increase the power output of surface-emitters in combination with near-diffraction-limited beam quality, we explore the complex interplay between the intracavity optical fields and the quantum well gain material in SDL structures. Our simulations reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers, and stimulated recombination from states near the band edge. Our full time-domain approach is shown to also be an excellent framework for the modelling of the interaction of high-intensity femtosecond and picosecond pulses with semiconductor nanostructures. It is demonstrated that group velocity dispersion, dynamical gain saturation and fast self-phase modulation (SPM) are the main causes for the induced changes and asymmetries in the amplified pulse shape and spectrum of an ultrashort high-intensity pulse. We attest that the time constants of the intraband scattering processes are critical to gain recovery. Moreover, we present

Integral type operators from normal weighted Bloch spaces to QT,S spaces

Directory of Open Access Journals (Sweden)

Yongyi GU

2016-08-01

Full Text Available Operator theory is an important research content of the analytic function space theory. The discussion of simultaneous operator and function space is an effective way to study operator and function space. Assuming that  is an analytic self map on the unit disk Δ, and the normal weighted bloch space μ-B is a Banach space on the unit disk Δ, defining a composition operator C∶C(f=f on μ-B for all f∈μ-B, integral type operator JhC and CJh are generalized by integral operator and composition operator. The boundeness and compactness of the integral type operator JhC acting from normal weighted Bloch spaces to QT,S spaces are discussed, as well as the boundeness of the integral type operators CJh acting from normal weighted Bloch spaces to QT,S spaces. The related sufficient and necessary conditions are given.

Bloch Modes and Evanescent Modes of Photonic Crystals: Weak Form Solutions Based on Accurate Interface Triangulation

Directory of Open Access Journals (Sweden)

Matthias Saba

2015-01-01

Full Text Available We propose a new approach to calculate the complex photonic band structure, both purely dispersive and evanescent Bloch modes of a finite range, of arbitrary three-dimensional photonic crystals. Our method, based on a well-established plane wave expansion and the weak form solution of Maxwell’s equations, computes the Fourier components of periodic structures composed of distinct homogeneous material domains from a triangulated mesh representation of the inter-material interfaces; this allows substantially more accurate representations of the geometry of complex photonic crystals than the conventional representation by a cubic voxel grid. Our method works for general two-phase composite materials, consisting of bi-anisotropic materials with tensor-valued dielectric and magnetic permittivities ε and μ and coupling matrices ς. We demonstrate for the Bragg mirror and a simple cubic crystal closely related to the Kelvin foam that relatively small numbers of Fourier components are sufficient to yield good convergence of the eigenvalues, making this method viable, despite its computational complexity. As an application, we use the single gyroid crystal to demonstrate that the consideration of both conventional and evanescent Bloch modes is necessary to predict the key features of the reflectance spectrum by analysis of the band structure, in particular for light incident along the cubic [111] direction.

All-optical 1st- and 2nd-order differential equation solvers with large tuning ranges using Fabry-Pérot semiconductor optical amplifiers.

Science.gov (United States)

Chen, Kaisheng; Hou, Jie; Huang, Zhuyang; Cao, Tong; Zhang, Jihua; Yu, Yuan; Zhang, Xinliang

2015-02-09

We experimentally demonstrate an all-optical temporal computation scheme for solving 1st- and 2nd-order linear ordinary differential equations (ODEs) with tunable constant coefficients by using Fabry-Pérot semiconductor optical amplifiers (FP-SOAs). By changing the injection currents of FP-SOAs, the constant coefficients of the differential equations are practically tuned. A quite large constant coefficient tunable range from 0.0026/ps to 0.085/ps is achieved for the 1st-order differential equation. Moreover, the constant coefficient p of the 2nd-order ODE solver can be continuously tuned from 0.0216/ps to 0.158/ps, correspondingly with the constant coefficient q varying from 0.0000494/ps(2) to 0.006205/ps(2). Additionally, a theoretical model that combining the carrier density rate equation of the semiconductor optical amplifier (SOA) with the transfer function of the Fabry-Pérot (FP) cavity is exploited to analyze the solving processes. For both 1st- and 2nd-order solvers, excellent agreements between the numerical simulations and the experimental results are obtained. The FP-SOAs based all-optical differential-equation solvers can be easily integrated with other optical components based on InP/InGaAsP materials, such as laser, modulator, photodetector and waveguide, which can motivate the realization of the complicated optical computing on a single integrated chip.

Reve et action: Bloch, Heidegger et Levinas

Czech Academy of Sciences Publication Activity Database

Bierhanzl, Jan

2016-01-01

Roč. 12, č. 3 (2016), s. 1-6 ISSN 1336-6556 R&D Projects: GA ČR(CZ) GA16-23046S Institutional support: RVO:67985955 Keywords : possibility * wishing * decision * action * dream * utopia Subject RIV: AA - Philosophy ; Religion http://www.ostium.sk/sk/r%C8%87ve-er-action-bloch-heidegger-et-levinas/

Quasiperiodicity in time evolution of the Bloch vector under the thermal Jaynes-Cummings model

Science.gov (United States)

Azuma, Hiroo; Ban, Masashi

2014-07-01

We study a quasiperiodic structure in the time evolution of the Bloch vector, whose dynamics is governed by the thermal Jaynes-Cummings model (JCM). Putting the two-level atom into a certain pure state and the cavity field into a mixed state in thermal equilibrium at initial time, we let the whole system evolve according to the JCM Hamiltonian. During this time evolution, motion of the Bloch vector seems to be in disorder. Because of the thermal photon distribution, both a norm and a direction of the Bloch vector change hard at random. In this paper, taking a different viewpoint compared with ones that we have been used to, we investigate quasiperiodicity of the Bloch vector’s trajectories. Introducing the concept of the quasiperiodic motion, we can explain the confused behaviour of the system as an intermediate state between periodic and chaotic motions. More specifically, we discuss the following two facts: (1) If we adjust the time interval Δt properly, figures consisting of plotted dots at the constant time interval acquire scale invariance under replacement of Δt by sΔt, where s(>1) is an arbitrary real but not transcendental number. (2) We can compute values of the time variable t, which let |Sz(t)| (the absolute value of the z-component of the Bloch vector) be very small, with the Diophantine approximation (a rational approximation of an irrational number).

Taking a peek at Bloch oscillations

Science.gov (United States)

Morsch, Oliver

2016-11-01

Bloch oscillations arise when matter waves inside a periodic potential, such as a crystal lattice, are accelerated by a constant force. Keßler et al (2016 New J. Phys. 18 102001) have now experimentally tested a method that allows one to observe those oscillations continuously, without a destructive measurement on the matter wave. Their approach could help to make cold atom-based accelerometers and gravimeters more precise.

Incorporating excitation-induced dephasing into the Maxwell-Bloch numerical modeling of photon echoes

International Nuclear Information System (INIS)

Burr, G.W.; Harris, Todd L.; Babbitt, Wm. Randall; Jefferson, C. Michael

2004-01-01

We describe the incorporation of excitation-induced dephasing (EID) into the Maxwell-Bloch numerical simulation of photon echoes. At each time step of the usual numerical integration, stochastic frequency jumps of ions--caused by excitation of neighboring ions--is modeled by convolving each Bloch vector with the Bloch vectors of nearby frequency detunings. The width of this convolution kernel follows the instantaneous change in overall population, integrated over the simulated bandwidth. This approach is validated by extensive comparison against published and original experimental results. The enhanced numerical model is then used to investigate the accuracy of experiments designed to extrapolate to the intrinsic dephasing time T 2 from data taken in the presence of EID. Such a modeling capability offers improved understanding of experimental results, and should allow quantitative analysis of engineering tradeoffs in realistic optical coherent transient applications

A note on the Königs domain of compact composition operators on the Bloch space

Directory of Open Access Journals (Sweden)

Jones Matthew

2011-01-01

Full Text Available Abstract Let be the unit disk in the complex plane. We define to be the little Bloch space of functions f analytic in which satisfy lim|z|→1 (1 - |z|2|f'(z| = 0. If is analytic then the composition operator Cφ : f ↦ f ∘ φ is a continuous operator that maps into itself. In this paper, we show that the compactness of Cφ , as an operator on , can be modelled geometrically by its principal eigenfunction. In particular, under certain necessary conditions, we relate the compactness of Cφ to the geometry of , where σ satisfies Schöder's functional equation σ ∘ φ = φ'(0σ. 2000 Mathematics Subject Classification: Primary 30D05; 47B33 Secondary 30D45.

Theory of semiconductor junction devices a textbook for electrical and electronic engineers

CERN Document Server

Leck, J H

1967-01-01

Theory of Semiconductor Junction Devices: A Textbook for Electrical and Electronic Engineers presents the simplified numerical computation of the fundamental electrical equations, specifically Poisson's and the Hall effect equations. This book provides the fundamental theory relevant for the understanding of semiconductor device theory. Comprised of 10 chapters, this book starts with an overview of the application of band theory to the special case of semiconductors, both intrinsic and extrinsic. This text then describes the electrical properties of conductivity, semiconductors, and Hall effe

Improved Reading Gate For Vertical-Bloch-Line Memory

Science.gov (United States)

Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

1994-01-01

Improved design for reading gate of vertical-Bloch-line magnetic-bubble memory increases reliability of discrimination between binary ones and zeros. Magnetic bubbles that signify binary "1" and "0" produced by applying sufficiently large chopping currents to memory stripes. Bubbles then propagated differentially in bubble sorter. Method of discriminating between ones and zeros more reliable.

Two-wave mixing in a broad-area semiconductor amplifier

DEFF Research Database (Denmark)

Chi, M.; Jensen, S.B.; Huignard, J.P.

2006-01-01

The two-wave mixing in the broad-area semiconductor amplifier was investigated, both theoretically and experimentally. In detail we investigated how the optical gain is affected by the presence of the two-wave mixing interference grating. In the experimental setup we are able to turn on and off...... the interference pattern in the semiconductor amplifier. This arrangement allows us to determine the two-wave mixing gain. The coupled-wave equations of two-wave mixing were derived based on the Maxwell’s wave equation and rate equation of the carrier density. The analytical solutions of the coupled-wave equations...

Effective equations for the precession dynamics of electron spins and electron–impurity correlations in diluted magnetic semiconductors

International Nuclear Information System (INIS)

Cygorek, M; Axt, V M

2015-01-01

Starting from a quantum kinetic theory for the spin dynamics in diluted magnetic semiconductors, we derive simplified equations that effectively describe the spin transfer between carriers and magnetic impurities for an arbitrary initial impurity magnetization. Taking the Markov limit of these effective equations, we obtain good quantitative agreement with the full quantum kinetic theory for the spin dynamics in bulk systems at high magnetic doping. In contrast, the standard rate description where the carrier–dopant interaction is treated according to Fermi’s golden rule, which involves the assumption of a short memory as well as a perturbative argument, has been shown previously to fail if the impurity magnetization is non-zero. The Markov limit of the effective equations is derived, assuming only a short memory, while higher order terms are still accounted for. These higher order terms represent the precession of the carrier–dopant correlations in the effective magnetic field due to the impurity spins. Numerical calculations show that the Markov limit of our effective equations reproduces the results of the full quantum kinetic theory very well. Furthermore, this limit allows for analytical solutions and for a physically transparent interpretation. (paper)

On averaging the Kubo-Hall conductivity of magnetic Bloch bands leading to Chern numbers

International Nuclear Information System (INIS)

Riess, J.

1997-01-01

The authors re-examine the topological approach to the integer quantum Hall effect in its original form where an average of the Kubo-Hall conductivity of a magnetic Bloch band has been considered. For the precise definition of this average it is crucial to make a sharp distinction between the discrete Bloch wave numbers k 1 , k 2 and the two continuous integration parameters α 1 , α 2 . The average over the parameter domain 0 ≤ α j 1 , k 2 . They show how this can be transformed into a single integral over the continuous magnetic Brillouin zone 0 ≤ α j j , j = 1, 2, n j = number of unit cells in j-direction, keeping k 1 , k 2 fixed. This average prescription for the Hall conductivity of a magnetic Bloch band is exactly the same as the one used for a many-body system in the presence of disorder

Quantum Transport in Solids: Bloch Dynamics and Role of Oscillating Fields

National Research Council Canada - National Science Library

Kim, Ki

1997-01-01

.... The specific areas of research are those of Bloch electron dynamics, quantum transport in oscillating electric fields or in periodic potentials, and the capacitive nature of atomic size structures...

Activity coefficients of electrons and holes in semiconductors

International Nuclear Information System (INIS)

Orazem, M.E.; Newman, J.

1984-01-01

Dilute-solution transport equations with constant activity coefficients are commonly used to model semiconductors. These equations are consistent with a Boltzmann distribution and are invalid in regions where the species concentration is close to the respective site concentration. A more rigorous treatment of transport in a semiconductor requires activity coefficients which are functions of concentration. Expressions are presented for activity coefficients of electrons and holes in semiconductors for which conduction- and valence-band energy levels are given by the respective bandedge energy levels. These activity coefficients are functions of concentration and are thermodynamically consistent. The use of activity coefficients in macroscopic transport relationships allows a description of electron transport in a manner consistent with the Fermi-Dirac distribution

Effect of gain nonlinearity in semiconductor lasers

DEFF Research Database (Denmark)

Jensen, Niels H.; Christiansen, Peter Leth; Skovgaard, Ove

1988-01-01

Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2+1)-dimensi......Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2...

Calculation of the internal electric field within doped semiconductors

International Nuclear Information System (INIS)

Phelps, G J

2012-01-01

A detailed model for the calculation of the internal potential and electric field profile within doped semiconductors is developed from a first-principles approach and presented in this paper. The model utilizes Poisson's equation and basic Boltzmann statistics to develop a standard nonlinear Poisson–Boltzmann equation (NPBE) for doped semiconductors. The resultant NPBE links the internal electrostatic potential within the doped semiconductor to the doping concentration profile of the semiconductor device under consideration. The NPBE is solved by the application of numerical methods, is general in formulation, supporting multiple simultaneous dopant configurations, and may be applied to any semiconductor type. Calculated results of the electric field profile for various semiconductor dopant structures derived using the model are additionally presented in this paper. The electric field results predicted by the model are shown to be in excellent agreement with those found by other methods. The model may be expanded to accommodate effects involving internal substrate electron–hole pair generation (gemination) caused by photo-ionization for application to and the modeling of solar cell device structures. (paper)

On the equilibrium configuration of the Kittel type domain structure with Bloch walls, l80deg

International Nuclear Information System (INIS)

Gavrila, H.

1975-01-01

Using a phenomenologic method for appreciating different components of the free energy, the equilibrium configuration of the Kittel-type domain structure with Bloch walls is obtained. By improving the known methods, more accurate magnetostatic energy calculations are reported. In order to determine the equilibrium structure, the total free energy is minimized with respect to two system parameters: the Bloch wall width and the structure half-period. (author)

Series: Utilization of Differential Equations and Methods for Solving Them in Medical Physics (3).

Science.gov (United States)

Murase, Kenya

2016-01-01

In this issue, simultaneous differential equations were introduced. These differential equations are often used in the field of medical physics. The methods for solving them were also introduced, which include Laplace transform and matrix methods. Some examples were also introduced, in which Laplace transform and matrix methods were applied to solving simultaneous differential equations derived from a three-compartment kinetic model for analyzing the glucose metabolism in tissues and Bloch equations for describing the behavior of the macroscopic magnetization in magnetic resonance imaging.In the next (final) issue, partial differential equations and various methods for solving them will be introduced together with some examples in medical physics.

A Greenian approach to the solution of the Schroedinger equation for periodic lattice potentials

International Nuclear Information System (INIS)

Minelli, T.A.

1976-01-01

A modified structural Green's function (MSGF), exploiting all the information contained in the previously solved Schroedinger equation for the electron interacting with a single lattice site, has been introduced and used in order to obtain, from a Dyson-type equation, a kernel whose poles and residues give the E-vs.-k relation and, respectively, the Bloch functions. Such a formulation suggests an alternative technique for the approximate solution of the KKR equations. The MSGF formalism has been also used in order to determine the structure constants of a one-dimensional lattice in a general representation

News Focus: NSF Director Erich Bloch Discusses Foundation's Problems, Outlook.

Science.gov (United States)

Chemical and Engineering News, 1987

1987-01-01

Relates the comments offered in an interview with Erich Bloch, the National Science Foundation (NSF) Director. Discusses issues related to NSF and its funding, engineering research centers, involvement with industry, concern for science education, computer centers, and its affiliation with the social sciences. (ML)

Influence of relaxation times on the Bloch-Siegert shift

International Nuclear Information System (INIS)

Cao Long Van

1981-01-01

A new method for calculations of Bloch-Siegert shifts in resonances between excited states with the inclusion of relaxation times is given. It will be shown that in this case the definition of the resonance given by I. Bialynicka-Birula is in agreement with the criterion defining the resonance used by D.A. Andrews and G. Newton. (author)

Prolongation Loop Algebras for a Solitonic System of Equations

Directory of Open Access Journals (Sweden)

Maria A. Agrotis

2006-11-01

Full Text Available We consider an integrable system of reduced Maxwell-Bloch equations that describes the evolution of an electromagnetic field in a two-level medium that is inhomogeneously broadened. We prove that the relevant Bäcklund transformation preserves the reality of the n-soliton potentials and establish their pole structure with respect to the broadening parameter. The natural phase space of the model is embedded in an infinite dimensional loop algebra. The dynamical equations of the model are associated to an infinite family of higher order Hamiltonian systems that are in involution. We present the Hamiltonian functions and the Poisson brackets between the extended potentials.

Theory of spin-polarized transport in ferromagnet-semiconductor structures: Unified description of ballistic and diffusive transport

International Nuclear Information System (INIS)

Lipperheide, R.; Wille, U.

2006-01-01

A theory of spin-polarized electron transport in ferromagnet-semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductors, is outlined. The aim is to provide a framework for studying the interplay of spin relaxation and transport mechanism in spintronic devices. Transport inside the (nondegenerate) semiconductor is described in terms of a thermoballistic current, in which electrons move ballistically in the electric field arising from internal and external electrostatic potentials, and are thermalized at randomly distributed equilibration points. Spin relaxation is allowed to take place during the ballistic motion. For arbitrary potential profile and arbitrary values of the momentum and spin relaxation lengths, an integral equation for a spin transport function determining the spin polarization in the semiconductor is derived. For field-driven transport in a homogeneous semiconductor, the integral equation can be converted into a second-order differential equation that generalizes the spin drift-diffusion equation. The spin polarization in ferromagnet-semiconductor structures is obtained by matching the spin-resolved chemical potentials at the interfaces, with allowance for spin-selective interface resistances. Illustrative examples are considered

Spin Relaxation in III-V Semiconductors in various systems: Contribution of Electron-Electron Interaction

Science.gov (United States)

Dogan, Fatih; Kesserwan, Hasan; Manchon, Aurelien

2015-03-01

In spintronics, most of the phenomena that we are interested happen at very fast time scales and are rich in structure in time domain. Our understanding, on the other hand, is mostly based on energy domain calculations. Many of the theoretical tools use approximations and simplifications that can be perceived as oversimplifications. We compare the structure, material, carrier density and temperature dependence of spin relaxation time in n-doped III-V semiconductors using Elliot-Yafet (EY) and D'yakanov-Perel'(DP) with real time analysis using kinetic spin Bloch equations (KSBE). The EY and DP theories fail to capture details as the system investigated is varied. KSBE, on the other hand, incorporates all relaxation sources as well as electron-electron interaction which modifies the spin relaxation time in a non-linear way. Since el-el interaction is very fast (~ fs) and spin-conserving, it is usually ignored in the analysis of spin relaxation. Our results indicate that electron-electron interaction cannot be neglected and its interplay with the other (spin and momentum) relaxation mechanisms (electron-impurity and electron-phonon scattering) dramatically alters the resulting spin dynamics. We use each interaction explicitly to investigate how, in the presence of others, each relaxation source behaves. We use GaAs and GaN for zinc-blend structure, and GaN and AlN for the wurtzite structure.

Surface Acoustic Bloch Oscillations, the Wannier-Stark Ladder, and Landau-Zener Tunneling in a Solid

Science.gov (United States)

de Lima, M. M., Jr.; Kosevich, Yu. A.; Santos, P. V.; Cantarero, A.

2010-04-01

We present the experimental observation of Bloch oscillations, the Wannier-Stark ladder, and Landau-Zener tunneling of surface acoustic waves in perturbed grating structures on a solid substrate. A model providing a quantitative description of our experimental observations, including multiple Landau-Zener transitions of the anticrossed surface acoustic Wannier-Stark states, is developed. The use of a planar geometry for the realization of the Bloch oscillations and Landau-Zener tunneling allows a direct access to the elastic field distribution. The vertical surface displacement has been measured by interferometry.

Finite element method for simulation of the semiconductor devices

International Nuclear Information System (INIS)

Zikatanov, L.T.; Kaschiev, M.S.

1991-01-01

An iterative method for solving the system of nonlinear equations of the drift-diffusion representation for the simulation of the semiconductor devices is worked out. The Petrov-Galerkin method is taken for the discretization of these equations using the bilinear finite elements. It is shown that the numerical scheme is a monotonous one and there are no oscillations of the solutions in the region of p-n transition. The numerical calculations of the simulation of one semiconductor device are presented. 13 refs.; 3 figs

Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices

CERN Document Server

Merten, K; Bulirsch, R

1990-01-01

Numerical simulation and modelling of electric circuits and semiconductor devices are of primal interest in today's high technology industries. At the Oberwolfach Conference more than forty scientists from around the world, in­ cluding applied mathematicians and electrical engineers from industry and universities, presented new results in this area of growing importance. The contributions to this conference are presented in these proceedings. They include contributions on special topics of current interest in circuit and device simulation, as well as contributions that present an overview of the field. In the semiconductor area special lectures were given on mixed finite element methods and iterative procedures for the solution of large linear systems. For three dimensional models new discretization procedures including software packages were presented. Con­ nections between semiconductor equations and the Boltzmann equation were shown as well as relations to the quantum transport equation. Other issues dis...

An Optomechanical Elevator: Transport of a Bloch Oscillating Bose–Einstein Condensate up and down an Optical Lattice by Cavity Sideband Amplification and Cooling

Directory of Open Access Journals (Sweden)

B. Prasanna Venkatesh

2015-12-01

Full Text Available In this paper we give a new description, in terms of optomechanics, of previous work on the problem of an atomic Bose–Einstein condensate interacting with the optical lattice inside a laser-pumped optical cavity and subject to a bias force, such as gravity. An atomic wave packet in a tilted lattice undergoes Bloch oscillations; in a high-finesse optical cavity the backaction of the atoms on the light leads to a time-dependent modulation of the intracavity lattice depth at the Bloch frequency which can in turn transport the atoms up or down the lattice. In the optomechanical picture, the transport dynamics can be interpreted as a manifestation of dynamical backaction-induced sideband damping/amplification of the Bloch oscillator. Depending on the sign of the pump-cavity detuning, atoms are transported either with or against the bias force accompanied by an up- or down-conversion of the frequency of the pump laser light. We also evaluate the prospects for using the optomechanical Bloch oscillator to make continuous measurements of forces by reading out the Bloch frequency. In this context, we establish the significant result that the optical spring effect is absent and the Bloch frequency is not modified by the backaction.

New algorithm for efficient Bloch-waves calculations of orientation-sensitive ELNES

Czech Academy of Sciences Publication Activity Database

Rusz, Ján; Muto, S.; Tatsumi, K.

2013-01-01

Roč. 125, Feb (2013), s. 81-88 ISSN 0304-3991 Institutional support: RVO:68378271 Keywords : transmission electron microscopy * density functional theory * dynamical diffraction theory * Bloch waves * electron magnetic circular dichroism Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.745, year: 2013

Integral-Type Operators from Bloch-Type Spaces to QK Spaces

Directory of Open Access Journals (Sweden)

Stevo Stević

2011-01-01

Full Text Available The boundedness and compactness of the integral-type operator Iφ,g(nf(z=∫0zf(n(φ(ζg(ζdζ, where n∈N0, φ is a holomorphic self-map of the unit disk D, and g is a holomorphic function on D, from α-Bloch spaces to QK spaces are characterized.

Nonresonant Faraday rotation in glassy semiconductors

Science.gov (United States)

van den Keybus, P.; Grevendonk, W.

1986-06-01

Nonresonant interband Faraday rotation in amorphous semiconductors, as a function of photon energy, may be described by an equation derived for direct transitions in crystalline semiconductors. In this paper it is shown how this equation may be obtained for the former case also, assuming a parabolic density of states function N(E) and a correlation between valence- and conduction-band states. The analysis of experiments on chalcogenide glasses reveals a Faraday-rotation energy gap EFRg that is significantly larger than the optical gap Eoptg. The effect is attributed to transitions between extended states, so that it is meaningful to compare EFRg with the mobility gap Eμg. For oxide glasses both gaps are comparable but for chalcogenide glasses EFRg is too large by a few tenths of 1 eV.

Surface Acoustic Analog of Bloch Oscillations, Wannier-Stark Ladders and Landau-Zener Tunneling

Science.gov (United States)

de Lima, M. M.; Kosevich, Yu. A.; Santos, P. V.; Cantarero, A.

2011-12-01

In this contribution, we discuss the recent experimental demonstration of Wannier-Stark ladders, Bloch Oscillations and Landau Zener tunneling in a solid by means of surface acoustic waves propagating through perturbed grating structures.

Exact solutions of a nonpolynomially nonlinear Schrodinger equation

International Nuclear Information System (INIS)

Parwani, R.; Tan, H.S.

2007-01-01

A nonlinear generalisation of Schrodinger's equation had previously been obtained using information-theoretic arguments. The nonlinearities in that equation were of a nonpolynomial form, equivalent to the occurrence of higher-derivative nonlinear terms at all orders. Here we construct some exact solutions to that equation in 1+1 dimensions. On the half-line, the solutions resemble (exponentially damped) Bloch waves even though no external periodic potential is included. The solutions are nonperturbative as they do not reduce to solutions of the linear theory in the limit that the nonlinearity parameter vanishes. An intriguing feature of the solutions is their infinite degeneracy: for a given energy, there exists a very large arbitrariness in the normalisable wavefunctions. We also consider solutions to a q-deformed version of the nonlinear equation and discuss a natural discretisation implied by the nonpolynomiality. Finally, we contrast the properties of our solutions with other solutions of nonlinear Schrodinger equations in the literature and suggest some possible applications of our results in the domains of low-energy and high-energy physics

Fundamentals of semiconductor lasers

CERN Document Server

Numai, Takahiro

2015-01-01

This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

Phonon structures of GaN-based random semiconductor alloys

Science.gov (United States)

Zhou, Mei; Chen, Xiaobin; Li, Gang; Zheng, Fawei; Zhang, Ping

2017-12-01

Accurate modeling of thermal properties is strikingly important for developing next-generation electronics with high performance. Many thermal properties are closely related to phonon dispersions, such as sound velocity. However, random substituted semiconductor alloys AxB1-x usually lack translational symmetry, and simulation with periodic boundary conditions often requires large supercells, which makes phonon dispersion highly folded and hardly comparable with experimental results. Here, we adopt a large supercell with randomly distributed A and B atoms to investigate substitution effect on the phonon dispersions of semiconductor alloys systematically by using phonon unfolding method [F. Zheng, P. Zhang, Comput. Mater. Sci. 125, 218 (2016)]. The results reveal the extent to which phonon band characteristics in (In,Ga)N and Ga(N,P) are preserved or lost at different compositions and q points. Generally, most characteristics of phonon dispersions can be preserved with indium substitution of gallium in GaN, while substitution of nitrogen with phosphorus strongly perturbs the phonon dispersion of GaN, showing a rapid disintegration of the Bloch characteristics of optical modes and introducing localized impurity modes. In addition, the sound velocities of both (In,Ga)N and Ga(N,P) display a nearly linear behavior as a function of substitution compositions. Supplementary material in the form of one pdf file available from the Journal web page at http://https://doi.org/10.1140/epjb/e2017-80481-0.

Transistor electronics use of semiconductor components in switching operations

CERN Document Server

Rumpf, Karl-Heinz

2014-01-01

Transistor Electronics: Use of Semiconductor Components in Switching Operations presents the semiconductor components as well as their elementary circuits. This book discusses the scope of application of electronic devices to increase productivity. Organized into eight chapters, this book begins with an overview of the general equation for the representation of integer positive numbers. This text then examines the properties and characteristics of basic electronic components, which relates to an understanding of the operation of semiconductors. Other chapters consider the electronic circuit ar

Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces

International Nuclear Information System (INIS)

Birner, Stefan

2011-01-01

The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano 3 software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano 3 software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model to recently

Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces

Energy Technology Data Exchange (ETDEWEB)

Birner, Stefan

2011-11-15

The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano{sup 3} software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano{sup 3} software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model

A new characterization of Bloch function in the unit ball of Cn

International Nuclear Information System (INIS)

Shi Jihuai.

1989-07-01

Bloch function in the unit disc v has many different but equivalent characterizations. Recently, a new characterization has been obtained by the study of Hankel operators. The purpose of this note is to generalize this characterization to the unit ball of C n . 7 refs

Electrowetting on semiconductors

Science.gov (United States)

Palma, Cesar; Deegan, Robert

2015-01-01

Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

The quantum group, Harper equation and structure of Bloch eigenstates on a honeycomb lattice

International Nuclear Information System (INIS)

Eliashvili, M; Tsitsishvili, G; Japaridze, G I

2012-01-01

The tight-binding model of quantum particles on a honeycomb lattice is investigated in the presence of a homogeneous magnetic field. Provided the magnetic flux per unit hexagon is a rational of the elementary flux, the one-particle Hamiltonian is expressed in terms of the generators of the quantum group U q (sl 2 ). Employing the functional representation of the quantum group U q (sl 2 ), the Harper equation is rewritten as a system of two coupled functional equations in the complex plane. For the special values of quasi-momentum, the entangled system admits solutions in terms of polynomials. The system is shown to exhibit a certain symmetry allowing us to resolve the entanglement, and a basic single equation determining the eigenvalues and eigenstates (polynomials) is obtained. Equations specifying the locations of the roots of polynomials in the complex plane are found. Employing numerical analysis, the roots of polynomials corresponding to different eigenstates are solved and diagrams exhibiting the ordered structure of one-particle eigenstates are depicted. (paper)

Transient electro-thermal modeling of bipolar power semiconductor devices

CERN Document Server

Gachovska, Tanya Kirilova; Du, Bin

2013-01-01

This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusio

Traffic restrictions on Routes Bloch, Maxwell and Bohr

CERN Multimedia

IT Department

2008-01-01

Excavation and pipework is being carried out in the framework of the transfer of the waste water treatment plant for the effluents from the surface treatment workshops from Building 254 to Building 676, currently under construction. This work may encroach onto Routes Bloch, Maxwell and Bohr and disrupt the flow of traffic. Users are requested to comply with the road signs that will be erected. The work is expected to last until the beginning of December 2008. Thank you for your understanding. TS/CE and TS/FM Groups Tel.7 4188 or 16 4314

Diagrammatical display of the counter-example to non-Abelian Bloch-Nordsieck conjecture

International Nuclear Information System (INIS)

Yoshida, Nobuo

1981-01-01

The reason why the Bloch-Nordsieck theorem breaks down in the Drell-Yan process is shown through a simple diagrammatical calculation. The uncancelled contribution is from the retarded soft gluons, and the colour weight different for each ''double cut diagram'' interrupts the cancellation analogous to QED. (author)

Bloch Surface Waves Using Graphene Layers: An Approach toward In-Plane Photodetectors

Directory of Open Access Journals (Sweden)

Richa Dubey

2018-03-01

Full Text Available A dielectric multilayer platform was investigated as a foundation for two-dimensional optics. In this paper, we present, to the best of our knowledge, the first experimental demonstration of absorption of Bloch surface waves in the presence of graphene layers. Graphene is initially grown on a Cu foil via Chemical Vapor Deposition and transferred layer by layer by a wet-transfer method using poly(methyl methacrylate, (PMMA. We exploit total internal reflection configuration and multi-heterodyne scanning near-field optical microscopy as a far-field coupling method and near-field characterization tool, respectively. The absorption is quantified in terms of propagation lengths of Bloch surface waves. A significant drop in the propagation length of the BSWs is observed in the presence of graphene layers. The propagation length of BSWs in bare multilayer is reduced to 17 times shorter in presence of graphene monolayer, and 23 times shorter for graphene bilayer.

Stochastic wave-function unravelling of the generalized Lindblad equation using correlated states

International Nuclear Information System (INIS)

Moodley, Mervlyn; Nsio Nzundu, T; Paul, S

2012-01-01

We perform a stochastic wave-function unravelling of the generalized Lindblad master equation using correlated states, a combination of the system state vectors and the environment population. The time-convolutionless projection operator method using correlated projection superoperators is applied to a two-state system, a qubit, that is coupled to an environment consisting of two energy bands which are both populated. These results are compared to the data obtained from Monte Carlo wave-function simulations based on the unravelling of the master equation. We also show a typical quantum trajectory and the average time evolution of the state vector on the Bloch sphere. (paper)

On an Integral-Type Operator Acting between Bloch-Type Spaces on the Unit Ball

Directory of Open Access Journals (Sweden)

Stevo Stević

2010-01-01

Full Text Available Let 𝔹 denote the open unit ball of ℂn. For a holomorphic self-map φ of 𝔹 and a holomorphic function g in 𝔹 with g(0=0, we define the following integral-type operator: Iφgf(z=∫01ℜf(φ(tzg(tz(dt/t, z∈𝔹. Here ℜf denotes the radial derivative of a holomorphic function f in 𝔹. We study the boundedness and compactness of the operator between Bloch-type spaces ℬω and ℬμ, where ω is a normal weight function and μ is a weight function. Also we consider the operator between the little Bloch-type spaces ℬω,0 and ℬμ,0.

Optimal cloning of qubits given by an arbitrary axisymmetric distribution on the Bloch sphere

International Nuclear Information System (INIS)

Bartkiewicz, Karol; Miranowicz, Adam

2010-01-01

We find an optimal quantum cloning machine, which clones qubits of arbitrary symmetrical distribution around the Bloch vector with the highest fidelity. The process is referred to as phase-independent cloning in contrast to the standard phase-covariant cloning for which an input qubit state is a priori better known. We assume that the information about the input state is encoded in an arbitrary axisymmetric distribution (phase function) on the Bloch sphere of the cloned qubits. We find analytical expressions describing the optimal cloning transformation and fidelity of the clones. As an illustration, we analyze cloning of qubit state described by the von Mises-Fisher and Brosseau distributions. Moreover, we show that the optimal phase-independent cloning machine can be implemented by modifying the mirror phase-covariant cloning machine for which quantum circuits are known.

Bipolaron assisted Bloch-like oscillations in organic lattices

International Nuclear Information System (INIS)

Ribeiro, Luiz Antonio; Ferreira da Cunha, Wiliam; Magela e Silva, Geraldo

2017-01-01

The transport of a dissociated bipolaron in organic one-dimensional lattices is theoretically investigated in the scope of a tight-binding model that includes electron-lattice interactions and an external electric field. Remarkably, the results point to a physical picture in which the dissociated bipolaron propagates as a combined state of two free-like electrons that coherently perform spatial Bloch oscillations (BO) above a critical field strength. It was also obtained that the BO's trajectory presents a net forward motion in the direction of the applied electric field. The impact of dynamical disorder in the formation of electronic BOs is determined.

Bipolaron assisted Bloch-like oscillations in organic lattices

Science.gov (United States)

Ribeiro, Luiz Antonio; Ferreira da Cunha, Wiliam; Magela e Silva, Geraldo

2017-06-01

The transport of a dissociated bipolaron in organic one-dimensional lattices is theoretically investigated in the scope of a tight-binding model that includes electron-lattice interactions and an external electric field. Remarkably, the results point to a physical picture in which the dissociated bipolaron propagates as a combined state of two free-like electrons that coherently perform spatial Bloch oscillations (BO) above a critical field strength. It was also obtained that the BO's trajectory presents a net forward motion in the direction of the applied electric field. The impact of dynamical disorder in the formation of electronic BOs is determined.

Bipolaron assisted Bloch-like oscillations in organic lattices

Energy Technology Data Exchange (ETDEWEB)

Ribeiro, Luiz Antonio, E-mail: ribeirojr@unb.br [International Center for Condensed Matter Physics, University of Brasília, P.O. Box 04531, 70.919-970, Brasília, DF (Brazil); University of Brasília, UnB Faculty of Planaltina, 73.345-010, Planaltina, DF (Brazil); Ferreira da Cunha, Wiliam; Magela e Silva, Geraldo [Institute of Physics, University of Brasília, 70.919-970, Brasília (Brazil)

2017-06-15

The transport of a dissociated bipolaron in organic one-dimensional lattices is theoretically investigated in the scope of a tight-binding model that includes electron-lattice interactions and an external electric field. Remarkably, the results point to a physical picture in which the dissociated bipolaron propagates as a combined state of two free-like electrons that coherently perform spatial Bloch oscillations (BO) above a critical field strength. It was also obtained that the BO's trajectory presents a net forward motion in the direction of the applied electric field. The impact of dynamical disorder in the formation of electronic BOs is determined.

Direct Observation of Bloch Harmonics and Negative Phase Velocity in Photonic Crystal Waveguides

NARCIS (Netherlands)

Gersen, H.; Karle, T.J.; Engelen, R.J.P.; Engelen, R.J.P.; Bogaerts, W.; Korterik, Jeroen P.; van Hulst, N.F.; Krauss, T.F.; Kuipers, L.

2005-01-01

The eigenfield distribution and the band structure of a photonic crystal waveguide have been measured with a phase-sensitive near-field scanning optical microscope. Bloch modes, which consist of more than one spatial frequency, are visualized in the waveguide. In the band structure, multiple

Basic semiconductor physics

CERN Document Server

Hamaguchi, Chihiro

2017-01-01

This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

Matter-wave solitons and finite-amplitude Bloch waves in optical lattices with spatially modulated nonlinearity

Science.gov (United States)

Zhang, Jie-Fang; Li, Yi-Shen; Meng, Jianping; Wu, Lei; Malomed, Boris A.

2010-09-01

We investigate solitons and nonlinear Bloch waves in Bose-Einstein condensates trapped in optical lattices (OLs). By introducing specially designed localized profiles of the spatial modulation of the attractive nonlinearity, we construct an infinite set of exact soliton solutions in terms of Mathieu and elliptic functions, with the chemical potential belonging to the semi-infinite gap of the OL-induced spectrum. Starting from the particular exact solutions, we employ the relaxation method to construct generic families of soliton solutions in a numerical form. The stability of the solitons is investigated through the computation of the eigenvalues for small perturbations, and also by direct simulations. Finally, we demonstrate a virtually exact (in the numerical sense) composition relation between nonlinear Bloch waves and solitons.

Matter-wave solitons and finite-amplitude Bloch waves in optical lattices with spatially modulated nonlinearity

International Nuclear Information System (INIS)

Zhang Jiefang; Meng Jianping; Wu Lei; Li Yishen; Malomed, Boris A.

2010-01-01

We investigate solitons and nonlinear Bloch waves in Bose-Einstein condensates trapped in optical lattices (OLs). By introducing specially designed localized profiles of the spatial modulation of the attractive nonlinearity, we construct an infinite set of exact soliton solutions in terms of Mathieu and elliptic functions, with the chemical potential belonging to the semi-infinite gap of the OL-induced spectrum. Starting from the particular exact solutions, we employ the relaxation method to construct generic families of soliton solutions in a numerical form. The stability of the solitons is investigated through the computation of the eigenvalues for small perturbations, and also by direct simulations. Finally, we demonstrate a virtually exact (in the numerical sense) composition relation between nonlinear Bloch waves and solitons.

Quantum theory of the optical and electronic properties of semiconductors

CERN Document Server

Haug, Hartmut

2009-01-01

This invaluable textbook presents the basic elements needed to understand and research into semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. Fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, the optical Stark effect, the semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz-Keldysh effects, are covered. The material is presented in sufficient detail for graduate students and researchers with a general background in quantum mechanics.This fifth edition includes an additional chapter on 'Quantum Optical Effects' where the theory of quantum optical effects in semiconductors is detailed. Besides deriving the 'semiconductor luminescence equations' and the expression for the stationary luminescence spectrum, the resu...

Simulation studies of current transport in metal-insulator-semiconductor Schottky barrier diodes

International Nuclear Information System (INIS)

Chand, Subhash; Bala, Saroj

2007-01-01

The current-voltage characteristics of Schottky diodes with an interfacial insulator layer are analysed by numerical simulation. The current-voltage data of the metal-insulator-semiconductor Schottky diode are simulated using thermionic emission diffusion (TED) equation taking into account an interfacial layer parameter. The calculated current-voltage data are fitted into ideal TED equation to see the apparent effect of interfacial layer parameters on current transport. Results obtained from the simulation studies shows that with mere presence of an interfacial layer at the metal-semiconductor interface the Schottky contact behave as an ideal diode of apparently high barrier height (BH), but with same ideality factor and series resistance as considered for a pure Schottky contact without an interfacial layer. This apparent BH decreases linearly with decreasing temperature. The effects giving rise to high ideality factor in metal-insulator-semiconductor diode are analysed. Reasons for observed temperature dependence of ideality factor in experimentally fabricated metal-insulator-semiconductor diodes are analysed and possible mechanisms are discussed

Modeling Dzyaloshinskii-Moriya Interaction at Transition Metal Interfaces: Constrained Moment versus Generalized Bloch Theorem

KAUST Repository

Dong, Yao-Jun

2017-10-29

Dzyaloshinskii-Moriya interaction (DMI) at Pt/Co interfaces is investigated theoretically using two different first principles methods. The first one uses the constrained moment method to build a spin spiral in real space, while the second method uses the generalized Bloch theorem approach to construct a spin spiral in reciprocal space. We show that although the two methods produce an overall similar total DMI energy, the dependence of DMI as a function of the spin spiral wavelength is dramatically different. We suggest that long-range magnetic interactions, that determine itinerant magnetism in transition metals, are responsible for this discrepancy. We conclude that the generalized Bloch theorem approach is more adapted to model DMI in transition metal systems, where magnetism is delocalized, while the constrained moment approach is mostly applicable to weak or insulating magnets, where magnetism is localized.

Modeling Dzyaloshinskii-Moriya Interaction at Transition Metal Interfaces: Constrained Moment versus Generalized Bloch Theorem

KAUST Repository

Dong, Yao-Jun; Belabbes, Abderrezak; Manchon, Aurelien

2017-01-01

Dzyaloshinskii-Moriya interaction (DMI) at Pt/Co interfaces is investigated theoretically using two different first principles methods. The first one uses the constrained moment method to build a spin spiral in real space, while the second method uses the generalized Bloch theorem approach to construct a spin spiral in reciprocal space. We show that although the two methods produce an overall similar total DMI energy, the dependence of DMI as a function of the spin spiral wavelength is dramatically different. We suggest that long-range magnetic interactions, that determine itinerant magnetism in transition metals, are responsible for this discrepancy. We conclude that the generalized Bloch theorem approach is more adapted to model DMI in transition metal systems, where magnetism is delocalized, while the constrained moment approach is mostly applicable to weak or insulating magnets, where magnetism is localized.

A theory of coherent propagation of light wave in semiconductors

International Nuclear Information System (INIS)

Zi-zhao, G.; Guo-zhen, Y.

1980-05-01

In this paper, we suggest a theory to describe the pheonmena of coherent propagation of light wave in semiconductors. Basing on two band system and considering the interband and intraband transitions induced by light wave and the interaction between electrons, we obtain the nonlinear equations for the description of interaction between carriers and coherent light wave. We have made use of the equations to analyse the phenomena which arise from the interaction between semiconductors and coherent light, for example, the multiphoton transitions, the saturation of light absorption of exciton, the shift of exciton line in intense light field, and the coherent propagation phenomena such as self-induced transparency, etc. (author)

Derivation and Numerical Approximation of the Quantum Drift Diffusion Model for Semiconductors

International Nuclear Information System (INIS)

Ohnmar Nwe

2004-06-01

This paper is concerned with the study of the quantum drift diffusion equation for semiconductors. Derivation of the mathematical model, which describes the electeon flow through a semiconductor device due to the application of a voltage, is considered and studied in numerical point of view by using some methods

Magnetic resonance described in the excitation dependent rotating frame of reference.

Science.gov (United States)

Tahayori, Bahman; Johnston, Leigh A; Mareels, Iven M Y; Farrell, Peter M

2008-01-01

An excitation dependent rotating frame of reference to observe the magnetic resonance phenomenon is introduced in this paper that, to the best of our knowledge, has not been used previously in the nuclear magnetic resonance context. The mathematical framework for this new rotating frame of reference is presented based on time scaling the Bloch equation after transformation to the classical rotating frame of reference whose transverse plane is rotating at the Larmor frequency. To this end, the Bloch equation is rewritten in terms of a magnetisation vector observed from the excitation dependent rotating frame of reference. The resultant Bloch equation is referred to as the time scaled Bloch equation. In the excitation dependent rotating frame of reference whose coordinates are rotating at the instantaneous Rabi frequency the observed magnetisation vector is a much slower signal than the true magnetisation in the rotating frame of reference. As a result the ordinary differential equation solvers have the ability to solve the time scaled version of the Bloch equation with a larger step size resulting in a smaller number of samples for solving the equation to a desired level of accuracy. The simulation results for different types of excitation are presented in this paper. This method may be used in true Bloch simulators in order to reduce the simulation time or increase the accuracy of the numerical solution. Moreover, the time scaled Bloch equation may be employed to determine the optimal excitation pattern in magnetic resonance imaging as well as designing pulses with better slice selectivity which is an active area of research in this field.

Differential equations inverse and direct problems

CERN Document Server

Favini, Angelo

2006-01-01

DEGENERATE FIRST ORDER IDENTIFICATION PROBLEMS IN BANACH SPACES A NONISOTHERMAL DYNAMICAL GINZBURG-LANDAU MODEL OF SUPERCONDUCTIVITY. EXISTENCE AND UNIQUENESS THEOREMSSOME GLOBAL IN TIME RESULTS FOR INTEGRODIFFERENTIAL PARABOLIC INVERSE PROBLEMSFOURTH ORDER ORDINARY DIFFERENTIAL OPERATORS WITH GENERAL WENTZELL BOUNDARY CONDITIONSTUDY OF ELLIPTIC DIFFERENTIAL EQUATIONS IN UMD SPACESDEGENERATE INTEGRODIFFERENTIAL EQUATIONS OF PARABOLIC TYPE EXPONENTIAL ATTRACTORS FOR SEMICONDUCTOR EQUATIONSCONVERGENCE TO STATIONARY STATES OF SOLUTIONS TO THE SEMILINEAR EQUATION OF VISCOELASTICITY ASYMPTOTIC BEHA

Metal–semiconductor nanojunctions and their rectification ...

Indian Academy of Sciences (India)

Using the standard equation the difference between the work functions of the metal and the semiconductor was calculated. This showed a variation with the temperature of measurement. This is explained as arising due to the effect of pressure generated as a result of thermal expansion of the metallic phases concerned ...

Modeling of Optoelectronic Devices

Science.gov (United States)

Li, Jian-Zhong; Woo, Alex C. (Technical Monitor)

2000-01-01

Ultrafast modulation of semiconductor quantum well (QW) laser is of technological importance for information technology. Improvement by order(s) of magnitude in data transfer rate is possible as terahertz (THz) radiation is available for heating the laser at picosecond time scale. Optical gain modulation in the QW is achieved via temperature modulation of electron-hole plasma (EHP). Applications include free-space THz communication, optical switching, and pulse generation. The EHP in the semiconductor QW is described with a two-band model. Semiconductor Bloch equations with many-body effects are used to derive a hydrodynamical model for the active QW region. Because of ultrafast carrier-carrier scatterings in the order of 50 fs, EHP follows quasiequilibrium Fermi-Dirac distributions and THz field interacts incoherently with it. Carrier-longitudinal optical (LO) phonon scatterings and coherent laser-EHP interaction are treated microscopically in our physical model. A set of hydrodynamical equations for plasma density, temperature, and laser envelop amplitude are derived and Runge-Kutta method is adopted for numerical simulation. A typical 8 nm GaAs/Al(0.3)Ga(0.7) As single QW at 300 K is used. Additional information is contained in the original extended abstract.

Theory of electroconductivity for anisotropic semiconductors of p-Te type

International Nuclear Information System (INIS)

Gorlej, P.N.; Tomchuk, P.M.; Shenderovskij, V.A.

1975-01-01

The temperature dependence of the electric conductivity tensor has been studied in anisotropic semiconductors of Te-type with the p-type conductivity. The inelastic scattering of carriers on the optical lattice vibrations and on impurity ions is taken into account. From a general equation for the mobility tensor obtained through the variation method rather simple temperature dependences of the mobility are found for various ultimate cases. In particular, a generalization is given of the Convell-Weizscopf equation for the case of anisotropic impurity scattering. In case of a mixed impurity and lattice mechanism of scattering the temperature dependence of the mobility is plotted as a diagram for the semiconductors of p-Te parameters

fdtd Semiconductor Microlaser Simulator v. 2.0

Energy Technology Data Exchange (ETDEWEB)

2009-01-29

This software simulates the transient optical response of a system of in-plane semiconductor lasers/waveguides of almost arbitrary 2D complexity using the effective index approximation. Gain is calculated by solving a 3D transport equation from an arbitrary contact geometry and epi structure to get an input current density to the active region, followed by a diffusion equation for carriers in that layer. The gain is saturable and frequency dependent so that output powers and frequency spectrum/longitudinal modes are predicted. Solution is by the finite-difference time-domain method on a 2D triangular grid, so that propagation in any direction along the epi plan is allowed, and arbitrary laser/waveguide shapes can be modeled, including rings. Runtime considerations, however, limit the practical solution region to approximately 500 microns**2 so that the applicability of this code is primarily limited to micro-resinators. Modeling of standard-edge-emitting semiconductor lasers is better accomplished using algorithms based on bi-directional beam propagation.

Heteroclinic dynamics of coupled semiconductor lasers with optoelectronic feedback.

Science.gov (United States)

Shahin, S; Vallini, F; Monifi, F; Rabinovich, M; Fainman, Y

2016-11-15

Generalized Lotka-Volterra (GLV) equations are important equations used in various areas of science to describe competitive dynamics among a population of N interacting nodes in a network topology. In this Letter, we introduce a photonic network consisting of three optoelectronically cross-coupled semiconductor lasers to realize a GLV model. In such a network, the interaction of intensity and carrier inversion rates, as well as phases of laser oscillator nodes, result in various dynamics. We study the influence of asymmetric coupling strength and frequency detuning between semiconductor lasers and show that inhibitory asymmetric coupling is required to achieve consecutive amplitude oscillations of the laser nodes. These studies were motivated primarily by the dynamical models used to model brain cognitive activities and their correspondence with dynamics obtained among coupled laser oscillators.

Hot electrons in superlattices: quantum transport versus Boltzmann equation

DEFF Research Database (Denmark)

Wacker, Andreas; Jauho, Antti-Pekka; Rott, S.

1999-01-01

A self-consistent solution of the transport equation is presented for semiconductor superlattices within different approaches: (i) a full quantum transport model based on nonequilibrium Green functions, (ii) the semiclassical Boltzmann equation for electrons in a miniband, and (iii) Boltzmann...

Identifying semiconductors by d.c. ionization conductivity

International Nuclear Information System (INIS)

Derenzo, Stephen E.; Bourret-Courchesne, Edith; James, Floyd J.; Klintenberg, Mattias K.; Porter-Chapman, Yetta; Wang, Jie; Weber, Marvin J.

2006-01-01

We describe a method for identifying semiconductor radiation detector materials based on the mobility of internally generated electrons and holes. It was designed for the early stages of exploration, when samples are not available as single crystals, but as crystalline powders. Samples are confined under pressure in an electric field and the increase in current resulting from exposure to a high-intensity source of 60Co gamma rays (i.e. the ionization current) is measured. We find that for known semiconductors the d.c. ionization current depends on voltage according to the Hecht equation, and for known insulators the d.c. ionization current is below our detection limits. This shows that the method can identify semiconductors in spite of significant carrier trapping. Using this method, we have determined that BiOI, PbIF,BiPbO2Cl, BiPbO2Br, BiPbO2I, Bi2GdO4Cl, Pb3O2I2, and Pb5O4I2 are semiconductors

Symmetrization of mathematical model of charge transport in semiconductors

Directory of Open Access Journals (Sweden)

Alexander M. Blokhin

2002-11-01

Full Text Available A mathematical model of charge transport in semiconductors is considered. The model is a quasilinear system of differential equations. A problem of finding an additional entropy conservation law and system symmetrization are solved.

Semiconductor

International Nuclear Information System (INIS)

2000-01-01

This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

Nonequilibrium Green's function formulation of quantum transport theory for multi-band semiconductors

International Nuclear Information System (INIS)

Zhao, Peiji; Horing, Norman J.M.; Woolard, Dwight L.; Cui, H.L.

2003-01-01

We present a nonequilibrium Green's function formulation of many-body quantum transport theory for multi-band semiconductor systems with a phonon bath. The equations are expressed exactly in terms of single particle nonequilibrium Green's functions and self-energies, treating the open electron-hole system in weak interaction with the bath. A decoupling technique is employed to separate the individual band Green's function equations of motion from one another, with the band-band interaction effects embedded in ''cross-band'' self-energies. This nonequilibrium Green's function formulation of quantum transport theory is amenable to solution by parallel computing because of its formal decoupling with respect to inter-band interactions. Moreover, this formulation also permits coding the simulator of an n-band semiconductor in terms of that for an (n-1)-band system, in step with the current tendency and development of programming technology. Finally, the focus of these equations on individual bands provides a relatively direct route for the determination of carrier motion in energy bands, and to delineate the influence of intra- and inter-band interactions. A detailed description is provided for three-band semiconductor systems

Magnon localization and Bloch oscillations in finite Heisenberg spin chains in an inhomogeneous magnetic field.

Science.gov (United States)

Kosevich, Yuriy A; Gann, Vladimir V

2013-06-19

We study the localization of magnon states in finite defect-free Heisenberg spin-1/2 ferromagnetic chains placed in an inhomogeneous magnetic field with a constant spatial gradient. Continuous transformation from the extended magnon states to the localized Wannier-Zeeman states in a finite spin chain placed in an inhomogeneous field is described both analytically and numerically. We describe for the first time the non-monotonic dependence of the energy levels of magnons, both long and short wavelength, on the magnetic field gradient, which is a consequence of magnon localization in a finite spin chain. We show that, in contrast to the destruction of the magnon band and the establishment of the Wannier-Stark ladder in a vanishingly small field gradient in an infinite chain, the localization of magnon states at the chain ends preserves the memory of the magnon band. Essentially, the localization at the lower- or higher-field chain end resembles the localization of the positive- or negative-effective-mass band quasiparticles. We also show how the beat dynamics of coherent superposition of extended spin waves in a finite chain in a homogeneous or weakly inhomogeneous field transforms into magnon Bloch oscillations of the superposition of localized Wannier-Zeeman states in a strongly inhomogeneous field. We provide a semiclassical description of the magnon Bloch oscillations and show that the correspondence between the quantum and semiclassical descriptions is most accurate for Bloch oscillations of the magnon coherent states, which are built from a coherent superposition of a large number of the nearest-neighbour Wannier-Zeeman states.

Magnon localization and Bloch oscillations in finite Heisenberg spin chains in an inhomogeneous magnetic field

International Nuclear Information System (INIS)

Kosevich, Yuriy A; Gann, Vladimir V

2013-01-01

We study the localization of magnon states in finite defect-free Heisenberg spin-1/2 ferromagnetic chains placed in an inhomogeneous magnetic field with a constant spatial gradient. Continuous transformation from the extended magnon states to the localized Wannier–Zeeman states in a finite spin chain placed in an inhomogeneous field is described both analytically and numerically. We describe for the first time the non-monotonic dependence of the energy levels of magnons, both long and short wavelength, on the magnetic field gradient, which is a consequence of magnon localization in a finite spin chain. We show that, in contrast to the destruction of the magnon band and the establishment of the Wannier–Stark ladder in a vanishingly small field gradient in an infinite chain, the localization of magnon states at the chain ends preserves the memory of the magnon band. Essentially, the localization at the lower- or higher-field chain end resembles the localization of the positive- or negative-effective-mass band quasiparticles. We also show how the beat dynamics of coherent superposition of extended spin waves in a finite chain in a homogeneous or weakly inhomogeneous field transforms into magnon Bloch oscillations of the superposition of localized Wannier–Zeeman states in a strongly inhomogeneous field. We provide a semiclassical description of the magnon Bloch oscillations and show that the correspondence between the quantum and semiclassical descriptions is most accurate for Bloch oscillations of the magnon coherent states, which are built from a coherent superposition of a large number of the nearest-neighbour Wannier–Zeeman states. (paper)

The annihilation of vertical-Bloch lines in the walls of hard domains to which bias fields and in-plane fields are alternately applied

International Nuclear Information System (INIS)

Sun, H.Y.; Hu, H.N.; Nie, X.F.

2001-01-01

The annihilation of vertical-Bloch lines in magnetic domain walls of the ordinary hard bubbles, to which both bias fields and in-plane fields are alternately applied, is investigated experimentally. The influence of an in-plane magnetic field on ordinary hard bubbles (OHB), dumbbell domains of the first kind (ID), and dumbbell domains of the second kind (IID) was analyzed, and a critical in-plane field range [H ip 0 ,H ip 2 ] for vertical Bloch line (VBL) annihilation was found. For the three types of hard domains (H ip 0 is the minimum critical in-plane field of VBLs which begin to be unstable, H ip 2 is the minimum critical in-plane field which only needs to be applied one time for collapse of all OHBs), the critical field range is the same with H ip 0 ≅8πM s . We hypothesize that there exists a direction along which the vertical-Bloch lines in the domain walls are annihilated most easily. It is also observed that the stability of vertical-Bloch lines in the domain walls does not depend on the initial state. This provides a more detailed description of the minimum critical in-plane field than previously known

Analysis of small-signal intensity modulation of semiconductor ...

Indian Academy of Sciences (India)

This paper demonstrates theoretical characterization of intensity modulation of semiconductor lasers (SL's). The study is based on a small-signal model to solve the laser rate equations taking into account suppression of optical gain. Analytical forms of the small-signal modulation response and modulation bandwidth are ...

Mathematical modeling of thermal runaway in semiconductor laser operation

NARCIS (Netherlands)

Smith, W.R.

2000-01-01

A mathematical model describing the coupling of electrical, optical and thermal effects in semiconductor lasers is introduced. Through a systematic asymptotic expansion, the governing system of differential equations is reduced to a single second-order boundary value problem. This highly nonlinear

Modes in light wave propagating in semiconductor laser

Science.gov (United States)

Manko, Margarita A.

1994-01-01

The study of semiconductor laser based on an analogy of the Schrodinger equation and an equation describing light wave propagation in nonhomogeneous medium is developed. The active region of semiconductor laser is considered as optical waveguide confining the electromagnetic field in the cross-section (x,y) and allowing waveguide propagation along the laser resonator (z). The mode structure is investigated taking into account the transversal and what is the important part of the suggested consideration longitudinal nonhomogeneity of the optical waveguide. It is shown that the Gaussian modes in the case correspond to spatial squeezing and correlation. Spatially squeezed two-mode structure of nonhomogeneous optical waveguide is given explicitly. Distribution of light among the laser discrete modes is presented. Properties of the spatially squeezed two-mode field are described. The analog of Franck-Condon principle for finding the maxima of the distribution function and the analog of Ramsauer effect for control of spatial distribution of laser emission are discussed.

Weighted Differentiation Composition Operator from Logarithmic Bloch Spaces to Zygmund-Type Spaces

Directory of Open Access Journals (Sweden)

Huiying Qu

2014-01-01

Full Text Available Let H( denote the space of all holomorphic functions on the unit disk of ℂ, u∈H( and let  n be a positive integer, φ a holomorphic self-map of , and μ a weight. In this paper, we investigate the boundedness and compactness of a weighted differentiation composition operator φ,unf(z=u(zf(n(φ(z,f∈H(, from the logarithmic Bloch spaces to the Zygmund-type spaces.

Effects of Coupling Lens on Optical Refrigeration of Semiconductors

International Nuclear Information System (INIS)

Kai, Ding; Yi-Ping, Zeng

2008-01-01

Optical refrigeration of semiconductors is encountering efficiency difficulties caused by nonradiative recombination and luminescence trapping. A commonly used approach for enhancing luminescence efficiency of a semiconductor device is coupling a lens with the device. We quantitatively study the effects of a coupling lens on optical refrigeration based on rate equations and photon recycling, and calculated cooling efficiencies of different coupling mechanisms and of different lens materials. A GaAs/GaInP heterostructure coupled with a homo-epitaxial GaInP hemispherical lens is recommended. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Theory of semiconductor lasers from basis of quantum electronics to analyses of the mode competition phenomena and noise

CERN Document Server

Yamada, Minoru

2014-01-01

This book provides a unified and complete theory for semiconductor lasers, covering topics ranging from the principles of classical and quantum mechanics to highly advanced levels for readers who need to analyze the complicated operating characteristics generated in the real application of semiconductor lasers.   The author conducts a theoretical analysis especially on the instabilities involved in the operation of semiconductor lasers. A density matrix into the theory for semiconductor lasers is introduced and the formulation of an improved rate equation to help understand the mode competition phenomena which cause the optical external feedback noise is thoroughly described from the basic quantum mechanics. The derivation of the improved rate equation will allow readers to extend the analysis for the different types of semiconductor materials and laser structures they deal with.   This book is intended not only for students and academic researchers but also for engineers who develop lasers for the market, ...

Theory of nanolaser devices: Rate equation analysis versus microscopic theory

DEFF Research Database (Denmark)

Lorke, Michael; Skovgård, Troels Suhr; Gregersen, Niels

2013-01-01

A rate equation theory for quantum-dot-based nanolaser devices is developed. We show that these rate equations are capable of reproducing results of a microscopic semiconductor theory, making them an appropriate starting point for complex device simulations of nanolasers. The input...

100% spin accumulation in non-half-metallic ferromagnet-semiconductor junctions

International Nuclear Information System (INIS)

Petukhov, A G; Niggemann, J; Smelyanskiy, V N; Osipov, V V

2007-01-01

We show that the spin polarization of electron density in non-magnetic degenerate semiconductors can achieve 100%. The effect of 100% spin accumulation does not require a half-metallic ferromagnetic contact and can be realized in ferromagnet-semiconductor FM-n + -n junctions even at moderate spin selectivity of the FM-n + contact when the electrons with spin 'up' are extracted from n semiconductor through the heavily doped n + layer into the ferromagnet and the electrons with spin 'down' are accumulated near the n + -n interface. We derived a general equation relating spin polarization of the current to that of the electron density in non-magnetic semiconductors. We found that the effect of complete spin polarization is achieved near the n + -n interface when the concentration of the spin 'up' electrons tends to zero in this region while the diffusion current of these electrons remains finite

Introduction to spintronics

CERN Document Server

Bandyopadhyay, Supriyo

2008-01-01

The Early History of Spin Spin The Bohr Planetary Model and Space Quantization The Birth of "Spin" The Stern-Gerlach Experiment The Advent of Spintronics The Quantum Mechanics of Spin Pauli Spin Matrices The Pauli Equation and Spinors More on the Pauli Equation Extending the Pauli Equation - the Dirac Equation The Time Independent Dirac Equation Appendix The Bloch Sphere The Spinor and the "Qubit" The Bloch Sphere Concept Evolution of a Spinor Spin-1/2 Particle in a Constant Magnetic Field: Larmor Precession Preparing to Derive the Rabi Formula The Rabi Formula The Density Matrix The Density Matrix Concept: Case of a Pure State Properties of the Density Matrix Pure Versus Mixed State Concept of the Bloch Ball Time Evolution of the Density Matrix: Case of Mixed State The Relaxation Times T1 and T2 and the Bloch Equations Spin Orbit Interaction Spin Orbit Interaction in a Solid Magneto-Electric Sub-Bands in Quantum Confined Structures in the Presence of Spin-Orbit Interaction Dispersion Relations of Spin Resolv...

Several Growth Characteristics of an Invasive Cyprinid Fish (Carassius gibelio Bloch, 1782

Directory of Open Access Journals (Sweden)

Sait BULUT

2013-05-01

Full Text Available Age composition, length-weight relationships, growth, and condition factors of the gibel carp (Carassius gibelio Bloch, 1782 were determined using specimens collected from Seyitler Reservoir between July 2005 to June 2006. A total of 149 gibel carp were observed and examined. The age composition of the samples ranged between I and VII years of age. It has been determined than 82.55% of the obtained samples are comprised of females, 16.11% is comprised of males and 1.34% is comprised of immature. The population is dominated by females able to reproduce gynogenetically. The mean fork lengths and mean weights of the population were 14.8-32.5 cm and 43.1-807.3 g respectively. The length-weight relation were calculated as W = 0.0696 L2.132, r=0.838 for females, for males W = 0.2942 L2.6417 r=0.784 and W = 0.0274 L2.9382, r=0.813 for all samples. The mean Fulton Condition Factor was calculated as 2.342 for females, 2.064 for males and 2.276 for all samples. Age-length and age-weight relations were determined according to von Bertalanffy growth equation formula. Growth parameters of the population were Lt = 48.09 [1-e-0.093(t+0.29], and Wt=2323.62 [1-e-0.093(t+0.29]2.9382. The growth performance index value (Ø´ was computed as 5.37 for all specimens.

Frequency locking, quasiperiodicity, subharmonic bifurcations and chaos in high frequency modulated stripe geometry DH semiconductor lasers

International Nuclear Information System (INIS)

Zhao Yiguang

1991-01-01

The method of obtaining self-consistent solutions of the field equation and the rate equations of photon density and carrier concentration has been used to study frequecny locking, quasiperiodicity, subharmonic bifurcations and chaos in high frequency modulated stripe geometry DH semiconductor lasers. The results show that the chaotic behavior arises in self-pulsing stripe geometry semiconductor lasers. The route to chaos is not period-double, but quasiperiodicity to chaos. All of the results agree with the experiments. Some obscure points in previous theory about chaos have been cleared up

Theory of tamm surface states on the boundary between Hgsub(1-x)Cdsub(x)Te type semimetal and narrow-gap semiconductor

International Nuclear Information System (INIS)

Mekhtiyev, M.A.; Kalina, V.A.

1980-01-01

The conditions of appearance of tamm surface states and their energy spectrum on the boundary of semimetals and narrow-gap semiconductors are considered. By the Green function method the equation for surface state energy is obtained. The solution of the latter is analyzed in particular cases when energy of heavy hole zones of the semimetal and semiconductor is the same and when the heavy hole gap of the semiconductor is shifted down relatively to the semimetal of the same name gap as well as accurate computer calculation. It is shown that neither in parabolic limits, nor in cases of a strongly unparabolic semiconductor (semimetal) and a parabolic semimetal (semiconductor) the equation obtained has no solutions at small quasipulse values i.e. there are no surface states. In the case when the heavy hole zone of a semiconductor is shifted down for the value of the order of narrow-gap semiconductor the effective mass of surface states turns to be twice heavier than that of the semimetal volumetrical electrons [ru

A New Approach for Evaluating Charge Transport Properties of Semiconductor Detectors

International Nuclear Information System (INIS)

Kim, Kyung O; Kim, Jong Kyung; Kim, Soon Young; Ha, Jang Ho

2009-01-01

The semiconductor detectors (e.g., CdTe, CdZnTe, and HgI 2 ) have been widely used for radiation detection and medical imaging because of its various outstanding features such as excellent energy resolution, wide bandgap energy, room temperature operation, and so on. Unfortunately, the performance of these detectors is mainly limited by the charge transport properties of semiconductor, especially the mobility-lifetime products (i.e., (μτ) e and ((μτ) h ). Hence, the analysis on the mobility-lifetime products is very important for evaluating correct characteristics of semiconductor detectors. A commonly used method to analyze the mobilitylifetime products is based on their responses to α particle. However, the α particle method cannot evaluate the ((μτ)h product in many cases, because a semiconductor detector operating at positive bias voltages often yields the energy spectrum without the peaks. This method is also known to be very sensitive to the experimental conditions as well as surface conditions of the detector. In this study, a new approach with gamma-ray instead of α particle was carried out to solve the determination difficulty of the ((μτ) h product with common method. The special relation between the two mobility-lifetime products, which we call the 'Nural equation', was also developed to simply obtain each parameter based on Hecht equation

Permittivity and Permeability for Floquet-Bloch Space Harmonics in Infinite 1D Magneto-Dielectric Periodic Structures

DEFF Research Database (Denmark)

Breinbjerg, Olav; Yaghjian, Arthur D.

2014-01-01

-Bloch space harmonics. We discuss how space harmonic permittivity and permeability can be expressed in seemingly different though equivalent forms, and we investigate these parameters of the zeroeth order space harmonic for a particular 1D periodic structure that is based on a previously reported 3D periodic...

From optics to superconductivity. Many body effects in transition metal dichalcogenides

Energy Technology Data Exchange (ETDEWEB)

Roesner, Malte; Schoenhoff, Gunnar; Wehling, Tim [Institute for Theoretical Physics, University of Bremen (Germany); Bremen Center for Computational Material Sciences, University of Bremen (Germany); Steinhoff, Alexander; Jahnke, Frank; Gies, Christopher [Institute for Theoretical Physics, University of Bremen (Germany); Haas, Stephan [Department of Physics and Astronomy, University of Southern California, Los Angeles, CA (United States)

2015-07-01

We discuss many body effects in MoS{sub 2} ranging from optical properties to the emergence superconductivity (SC) and charge density wave phases (CDW). Combining ab-initio theory and semiconductor Bloch equations we show that excited carriers cause a redshift of the excitonic ground-state absorption line, while higher excitonic lines disappear successively due to a huge Coulomb-induced band gap shrinkage of more than 500 meV and concomitant exciton binding-energy reductions. Upon strong charge doping, we observe a succession of semiconducting, metallic, SC, and CDW regimes. Both, the SC and the CDW instabilities trace back to a Kohn anomaly and related softening of Brillouin zone boundary phonons.

3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics

CERN Document Server

Li, Simon

2012-01-01

Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD.  This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D.  It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations.  Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc. Provides a vivid, internal view of semiconductor devices, through 3D TCAD simulation; Includes comprehensive coverage of  TCAD simulations for both optic and electronic devices, from nano-scale to high-voltage high-power devices; Presents material in a hands-on, tutorial fashion so that industry practitioners will find maximum utility; Includes a comprehensive library of devices, re...

Transient photoconductivity in amorphous semiconductors

International Nuclear Information System (INIS)

Mpawenayo, P.

1997-07-01

Localized states in amorphous semiconductors are divided in disorder induced shallow trap levels and dangling bonds deep states. Dangling bonds are assumed here to be either neutral or charged and their energy distribution is a single gaussian. Here, it is shown analytically that transient photocurrent in amorphous semiconductors is fully controlled by charge carriers transitions between localized states for one part and tunneling hopping carriers on the other. Localized dangling bonds deep states act as non radiative recombination centres, while hopping tunnelling is assisted by the Coulomb interaction between defects sites. The half-width of defects distribution is the disorder parameter that determines the carrier hopping time between defects sites. The macroscopic time that explains the long decay response times observed will all types of amorphous semiconductors is duly thought to be temperature dependent. Basic equations developed by Longeaud and Kleider are solved for the general case of a semiconductor after photo-generation. It turns out that the transient photoconductivity decay has two components; one with short response times from carriers trap-release transitions between shallow levels and extended states and a hopping component made of inter-dependent exponentials whose time constants span in larger ranges depending on disorder. The photoconductivity hopping component appears as an additional term to be added to photocurrents derived from existing models. The results of the present study explain and complete the power law decay derived in the multiple trapping models developed 20 years ago only in the approximation of the short response time regime. The long response time regime is described by the hopping macroscopic time. The present model is verified for all samples of amorphous semiconductors known so far. Finally, it is proposed to improved the modulated photoconductivity calculation techniques by including the long-lasting hopping dark documents

Propagation and collision of soliton rings in quantum semiconductor plasmas

International Nuclear Information System (INIS)

El-Shamy, E.F.; Gohman, F.S.

2014-01-01

The intrinsic localization of electrostatic wave energies in quantum semiconductor plasmas can be described by solitary pulses. The collision properties of these pulses are investigated. In the present study, the fundamental model includes the quantum term, degenerate pressure of the plasma species, and the electron/hole exchange–correlation effects. In cylindrical geometry, using the extended Poincaré–Lighthill–Kuo (PLK) method, the Korteweg–de Vries (KdV) equations and the analytical phase shifts after the collision of two soliton rings are derived. Typical values for GaSb and GaN semiconductors are used to estimate the basic features of soliton rings. It is found that the pulses of GaSb semiconductor carry more energies than the pulses of GaN semiconductor. In addition, the degenerate pressure terms of electrons and holes have strong impact on the phase shift. The present theory may be useful to analyze the collision of localized coherent electrostatic waves in quantum semiconductor plasmas. - Highlights: • The propagation and the collision of pulses in quantum semiconductor plasmas are studied. • Numerical calculations reveal that pulses may exist only in dark soliton rings for electron–hole quantum plasmas. • Typical values for GaSb and GaN semiconductors are used to estimate the basic features of soliton rings. • It is found that the pulses of GaSb semiconductor carry more energies than the pulses of GaN semiconductor. • The degenerate pressure terms of electrons and holes have strong impact on the phase shift

Entanglement and the three-dimensionality of the Bloch ball

Energy Technology Data Exchange (ETDEWEB)

Masanes, Ll., E-mail: ll.masanes@gmail.com [Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT (United Kingdom); Müller, M. P. [Institut für Theoretische Physik, Universität Heidelberg, Philosophenweg 19, D-69120 Heidelberg (Germany); Pérez-García, D. [Departamento de Analisis Matematico and IMI, Universidad Complutense de Madrid, 28040 Madrid (Spain); Augusiak, R. [ICFO-Institut de Ciencies Fotoniques, 08860 Castelldefels, Barcelona (Spain)

2014-12-15

We consider a very natural generalization of quantum theory by letting the dimension of the Bloch ball be not necessarily three. We analyze bipartite state spaces where each of the components has a d-dimensional Euclidean ball as state space. In addition to this, we impose two very natural assumptions: the continuity and reversibility of dynamics and the possibility of characterizing bipartite states by local measurements. We classify all these bipartite state spaces and prove that, except for the quantum two-qubit state space, none of them contains entangled states. Equivalently, in any of these non-quantum theories, interacting dynamics is impossible. This result reveals that “existence of entanglement” is the requirement with minimal logical content which singles out quantum theory from our family of theories.

Coherent excitation of vibrational levels using ultra short pulses

CSIR Research Space (South Africa)

De Clercq, LE

2009-07-01

Full Text Available population in a specific vibrational level. We used two approaches to do this, in the one model we used Von Neumann’s equations and the other the Optical Bloch equations (OBE’s). In this poster presentation the Optical Bloch model was used to do...

Projectile-z3 and -z4 corrections to basic Bethe-Bloch stopping power theory and mean excitation energies of Al, Si, Ni, Ge, Se, Y, Ag and Au

International Nuclear Information System (INIS)

Porter, L.E.; Bryan, S.R.

1980-01-01

Three independent sets of measurements of the stopping power of solid elemental targets for alpha particles were previously analyzed in terms of basic Bethe-Bloch theory with the low velocity projectile-z 3 correction term included. These data for Al, Si, Ni, Ge, Se, Y, Ag and Au have now been analyzed with the Bloch projectile-z 4 term and a revised projectile-z 3 term incorporated in the Bethe-Bloch formula, the projectile-z 3 revision having been effected by variation of the single free parameter of the projectile-z 3 effect formalism. The value of this parameter, fixed at 1.8 in previous studies, which counteracts inclusion of the projectile-z 4 term is 1.3 +- 0.1 for all target elements except Si. (orig.)

A new distributional record of alligator pipefish, Syngnathoides biaculeatus (Bloch, 1785) along Goa, central west coast of India

Digital Repository Service at National Institute of Oceanography (India)

Sanaye, S.V.; Rivonker, C.U.; Ansari, Z.A; Sreepada, R.A

Present study is based on a single male specimen of alligator pipefish, Syngnathoides biaculeatus (Bloch, 1785) collected from the bay-estuarine system of, Goa (central west coast of India) which is the new distributional record for this species. A...

Identification of Bloch-modes in hollow-core Photonic Crystal Fiber cladding

DEFF Research Database (Denmark)

Couny, F.; Benabid, F.; Roberts, John

2007-01-01

We report on the experimental visualization of the cladding Bloch-modes of a hollow-core photonic crystal fiber. Both spectral and spatial field information is extracted using the approach, which is based on measurement of the near-field and Fresnel-zone that results after propagation over a short...... length of fiber. A detailed study of the modes near the edges of the band gap shows that it is formed by the influence of three types of resonator: the glass interstitial apex, the silica strut which joins the neighboring apexes, and the air hole. The cladding electromagnetic field which survives...

Polaritons dispersion in a composite ferrite-semiconductor structure near gyrotropic-nihility state

Energy Technology Data Exchange (ETDEWEB)

Tuz, Vladimir R., E-mail: tvr@rian.kharkov.ua

2016-12-01

In the context of polaritons in a ferrite-semiconductor structure which is influenced by an external static magnetic field, the gyrotropic-nihility can be identified from the dispersion equation related to bulk polaritons as a particular extreme state, at which the longitudinal component of the corresponding constitutive tensor and bulk constant simultaneously acquire zero. Near the frequency of the gyrotropic-nihility state, the conditions of branches merging of bulk polaritons, as well as an anomalous dispersion of bulk and surface polaritons are found and discussed. - Highlights: • Gyrotropic-nihility state is identified from the dispersion equation related to bulk polaritons in a magnetic-semiconductor superlattice. • The conditions of branches merging of bulk polaritons are found. • An anomalous dispersion of bulk and surface polaritons is found and discussed.

Polaritons dispersion in a composite ferrite-semiconductor structure near gyrotropic-nihility state

International Nuclear Information System (INIS)

Tuz, Vladimir R.

2016-01-01

In the context of polaritons in a ferrite-semiconductor structure which is influenced by an external static magnetic field, the gyrotropic-nihility can be identified from the dispersion equation related to bulk polaritons as a particular extreme state, at which the longitudinal component of the corresponding constitutive tensor and bulk constant simultaneously acquire zero. Near the frequency of the gyrotropic-nihility state, the conditions of branches merging of bulk polaritons, as well as an anomalous dispersion of bulk and surface polaritons are found and discussed. - Highlights: • Gyrotropic-nihility state is identified from the dispersion equation related to bulk polaritons in a magnetic-semiconductor superlattice. • The conditions of branches merging of bulk polaritons are found. • An anomalous dispersion of bulk and surface polaritons is found and discussed.

Current problems in semiconductor detectors for high energy physics after particle irradiations

International Nuclear Information System (INIS)

Lazanu, Ionel

2002-01-01

The use of semiconductor materials as detectors in high radiation environments, as expected in future high energy accelerators or in space missions, poses severe problems in long-time operations, due to changes in the properties of the material, and consequently in the performances of detectors. This talk presents the major theoretical areas of current problems, reviews the works in this field and the stage of their understanding, including author's contributions The mechanisms of interaction of the projectile with the semiconductor, the production of primary defects, the physical quantities and the equations able to characterise and describe the radiation effects, and the equations of kinetics of defects are considered. Correlation between microscopic damage and detector performances and the possible ways to optimise the radiation hardness of materials are discussed. (author)

Transversal light forces in semiconductors

CERN Document Server

Lindberg, M

2003-01-01

The transversal light force is a well established effect in atomic and molecular systems that are exposed to spatially inhomogeneous light fields. In this paper it is shown theoretically that in an excited semiconductor, containing an electron-hole plasma or excitons, a similar light force exists, if the semiconductor is exposed to an ultrashort spatially inhomogeneous light field. The analysis is based on the equations of motion for the Wigner distribution functions of charge carrier populations and interband polarizations. The results show that, while the light force on the electron-hole plasma or the excitons does exist, its effects on the kinetic behaviour of the electron-hole plasma or the excitons are different compared to the situation in an atomic or molecular system. A detailed analysis presented here traces this difference back to the principal differences between atoms and molecules on the one hand and electron-hole plasmas or excitons on the other hand.

Notes on the genus Amphiprion Bloch & Schneider, 1801 (Teleostei: Pomacentridae) and its host sea anemones in the Seychelles

NARCIS (Netherlands)

Hartog, den J.C.

1997-01-01

The genus Amphiprion Bloch & Schneider, 1801, is represented in the Seychelles by two species, A. akallopisos Bleeker, 1853, and the endemic A. fuscocaudatus Allen, 1972. Throughout its distributional range Amphiprion akallopisos has exclusively been recorded to associate with the clownfish anemones

Full-angle Negative Reflection with An Ultrathin Acoustic Gradient Metasurface: Floquet-Bloch Modes Perspective and Experimental Verification

KAUST Repository

Liu, Bingyi

2017-07-01

Metasurface with gradient phase response offers new alternative for steering the propagation of waves. Conventional Snell\\'s law has been revised by taking the contribution of local phase gradient into account. However, the requirement of momentum matching along the metasurface sets its nontrivial beam manipulation functionality within a limited-angle incidence. In this work, we theoretically and experimentally demonstrate that the acoustic gradient metasurface supports the negative reflection for full-angle incidence. The mode expansion theory is developed to help understand how the gradient metasurface tailors the incident beams, and the full-angle negative reflection occurs when the first negative order Floquet-Bloch mode dominates. The coiling-up space structures are utilized to build desired acoustic gradient metasurface and the full-angle negative reflections have been perfectly verified by experimental measurements. Our work offers the Floquet-Bloch modes perspective for qualitatively understanding the reflection behaviors of the acoustic gradient metasurface and enables a new degree of the acoustic wave manipulating.

Many-particle theory of optical properties in low-dimensional nanostructures. Dynamics in single-walled carbon nanotubes and semiconductor quantum dots

Energy Technology Data Exchange (ETDEWEB)

Malic, Ermin

2008-09-02

This work focuses on the theoretical investigation of optical properties of low-dimensional nanostructures, specifically single-walled carbon nanotubes (CNTs) and self-assembled InAs/GaAs quantum dots (QDs). The density-matrix formalism is applied to explain recent experimental results and to give insight into the underlying physics. A microscopic calculation of the absorption coefficient and the Rayleigh scattering cross section is performed by a novel approach combining the density-matrix formalism with the tight-binding wave functions. The calculated spectra of metallic nanotubes show a double-peaked structure resulting from the trigonal warping effect. The intensity ratios of the four lowest-lying transitions in both absorption and Rayleigh spectra can be explained by the different behavior of the optical matrix elements along the high-symmetry lines K-{gamma} and K-M. The Rayleigh line shape is predicted to be asymmetric, with an enhanced cross section for lower photon energies arising from non-resonant contributions of the optical susceptibility. Furthermore, the Coulomb interaction is shown to be maximal when the momentum transfer is low. For intersubband processes with a perpendicular momentum transfer, the coupling strength is reduced to less than 5%. The chirality and diameter dependence of the excitonic binding energy and the transition frequency are presented in Kataura plots. Furthermore, the influence of the surrounding environment on the optical properties of CNTs is investigated. Extending the confinement to all three spatial dimensions, semiconductor Bloch equation are derived to describe the dynamics in QD semiconductor lasers and amplifiers. A detailed microscopic analysis of the nonlinear turn-on dynamics of electrically pumped InAs/GaAs QD lasers is performed, showing the generation of relaxation oscillations on a nanosecond time scale in both the photon and charge carrier density. The theory predicts a strong damping of relaxation oscillations

Many-particle theory of optical properties in low-dimensional nanostructures. Dynamics in single-walled carbon nanotubes and semiconductor quantum dots

International Nuclear Information System (INIS)

Malic, Ermin

2008-01-01

This work focuses on the theoretical investigation of optical properties of low-dimensional nanostructures, specifically single-walled carbon nanotubes (CNTs) and self-assembled InAs/GaAs quantum dots (QDs). The density-matrix formalism is applied to explain recent experimental results and to give insight into the underlying physics. A microscopic calculation of the absorption coefficient and the Rayleigh scattering cross section is performed by a novel approach combining the density-matrix formalism with the tight-binding wave functions. The calculated spectra of metallic nanotubes show a double-peaked structure resulting from the trigonal warping effect. The intensity ratios of the four lowest-lying transitions in both absorption and Rayleigh spectra can be explained by the different behavior of the optical matrix elements along the high-symmetry lines K-Γ and K-M. The Rayleigh line shape is predicted to be asymmetric, with an enhanced cross section for lower photon energies arising from non-resonant contributions of the optical susceptibility. Furthermore, the Coulomb interaction is shown to be maximal when the momentum transfer is low. For intersubband processes with a perpendicular momentum transfer, the coupling strength is reduced to less than 5%. The chirality and diameter dependence of the excitonic binding energy and the transition frequency are presented in Kataura plots. Furthermore, the influence of the surrounding environment on the optical properties of CNTs is investigated. Extending the confinement to all three spatial dimensions, semiconductor Bloch equation are derived to describe the dynamics in QD semiconductor lasers and amplifiers. A detailed microscopic analysis of the nonlinear turn-on dynamics of electrically pumped InAs/GaAs QD lasers is performed, showing the generation of relaxation oscillations on a nanosecond time scale in both the photon and charge carrier density. The theory predicts a strong damping of relaxation oscillations

Comparison of the Koster-Slater and the equation-of-motion method for calculation of the electronic structure of defects in compound semiconductors

International Nuclear Information System (INIS)

Tit, N.; Halley, J.W.

1992-01-01

Traditional methods of calculating the electronic structure of defects in semiconductors rely on matrix-diagonalization methods which use the unperturbed crystalline wave functions as a basis. Equation-of-motion (EOM) methods, on the other hand, give excellent results with strong disorder and many defects and make no use of the basis of unperturbed wave functions, but require self-averaging properties of the wave functions which appear superficially to make them unsuitable for study of local properties. We show here that EOM methods are better than traditional methods for calculating the electronic structure of essentially any finite-range impurity potential. The reason is basically that the numerical cost of the traditional Green's-function methods grows approximately as R 7 o/Iper sitet/P, where R is the range of the potential, whereas the cost of the EOM methods per site is independent of the range of the potential. Our detailed calculations on a model of an oxygen vacancy in rutile TiO 2 show that a crossover occurs very soon, so that equation-of-motion methods are better than the traditional ones in the case of potentials of realistic range

Fast-forward scaling theory for phase imprinting on a BEC: creation of a wave packet with uniform momentum density and loading to Bloch states without disturbance

Science.gov (United States)

Masuda, Shumpei; Nakamura, Katsuhiro; Nakahara, Mikio

2018-02-01

We study phase imprinting on Bose-Einstein condensates (BECs) with the fast-forward scaling theory revealing a nontrivial scaling property in quantum dynamics. We introduce a wave packet with uniform momentum density (WPUM) which has peculiar properties but is short-lived. The fast-forward scaling theory is applied to derive the driving potential for creation of the WPUMs in a predetermined time. Fast manipulation is essential for the creation of WPUMs because of the instability of the state. We also study loading of a BEC into a predetermined Bloch state in the lowest band from the ground state of a periodic potential. Controlled linear potential is not sufficient for creation of the Bloch state with large wavenumber because the change in the amplitude of the order parameter is not negligible. We derive the exact driving potential for creation of predetermined Bloch states using the obtained theory.

Theory of quantum diffusion in biased semiconductors

CERN Document Server

Bryksin, V V

2003-01-01

A general theory is developed to describe diffusion phenomena in biased semiconductors and semiconductor superlattices. It is shown that the Einstein relation is not applicable for all field strengths so that the calculation of the field-mediated diffusion coefficient represents a separate task. Two quite different diffusion contributions are identified. The first one disappears when the dipole operator commutes with the Hamiltonian. It plays an essential role in the theory of small polarons. The second contribution is obtained from a quantity that is the solution of a kinetic equation but that cannot be identified with the carrier distribution function. This is in contrast to the drift velocity, which is closely related to the distribution function. A general expression is derived for the quantum diffusion regime, which allows a clear physical interpretation within the hopping picture.

Myocardial T1 mapping at 3.0 tesla using an inversion recovery spoiled gradient echo readout and bloch equation simulation with slice profile correction (BLESSPC) T1 estimation algorithm.

Science.gov (United States)

Shao, Jiaxin; Rapacchi, Stanislas; Nguyen, Kim-Lien; Hu, Peng

2016-02-01

To develop an accurate and precise myocardial T1 mapping technique using an inversion recovery spoiled gradient echo readout at 3.0 Tesla (T). The modified Look-Locker inversion-recovery (MOLLI) sequence was modified to use fast low angle shot (FLASH) readout, incorporating a BLESSPC (Bloch Equation Simulation with Slice Profile Correction) T1 estimation algorithm, for accurate myocardial T1 mapping. The FLASH-MOLLI with BLESSPC fitting was compared with different approaches and sequences with regards to T1 estimation accuracy, precision and image artifact based on simulation, phantom studies, and in vivo studies of 10 healthy volunteers and three patients at 3.0 Tesla. The FLASH-MOLLI with BLESSPC fitting yields accurate T1 estimation (average error = -5.4 ± 15.1 ms, percentage error = -0.5% ± 1.2%) for T1 from 236-1852 ms and heart rate from 40-100 bpm in phantom studies. The FLASH-MOLLI sequence prevented off-resonance artifacts in all 10 healthy volunteers at 3.0T. In vivo, there was no significant difference between FLASH-MOLLI-derived myocardial T1 values and "ShMOLLI+IE" derived values (1458.9 ± 20.9 ms versus 1464.1 ± 6.8 ms, P = 0.50); However, the average precision by FLASH-MOLLI was significantly better than that generated by "ShMOLLI+IE" (1.84 ± 0.36% variance versus 3.57 ± 0.94%, P < 0.001). The FLASH-MOLLI with BLESSPC fitting yields accurate and precise T1 estimation, and eliminates banding artifacts associated with bSSFP at 3.0T. © 2015 Wiley Periodicals, Inc.

Semiconductor apparatus and method of fabrication for a semiconductor apparatus

NARCIS (Netherlands)

2010-01-01

The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

Bloch-Nordsieck estimates of high-temperature QED

International Nuclear Information System (INIS)

Fried, H. M.; Sheu, Y.-M.; Grandou, T.

2008-01-01

In anticipation of a subsequent application to QCD, we consider the case of QED at high temperature. We introduce a Fradkin representation into the exact, Schwingerian, functional expression of a fermion propagator, as well as a new and relevant version of the Bloch-Nordsieck model, which extracts the soft contributions of every perturbative graph, in contradistinction to the assumed separation of energy scales of previous semiperturbative treatments. Our results are applicable to the absorption of a fast particle which enters a heat bath, as well as to the propagation of a symmetric pulse within the thermal medium due to the appearance of an instantaneous, shockwave-like source acting in the medium. An exponentially decreasing time dependence of the incident particle's initial momentum combines with a stronger decrease in the particle's energy, estimated by a sum over all Matsubara frequencies, to model an initial 'fireball', which subsequently decays in a Gaussian fashion. When extended to QCD, qualitative applications could be made to RHIC scattering, in which a fireball appears, expands, and is damped away

Chaotic bursting in semiconductor lasers

Science.gov (United States)

Ruschel, Stefan; Yanchuk, Serhiy

2017-11-01

We investigate the dynamic mechanisms for low frequency fluctuations in semiconductor lasers subjected to delayed optical feedback, using the Lang-Kobayashi model. This system of delay differential equations displays pronounced envelope dynamics, ranging from erratic, so called low frequency fluctuations to regular pulse packages, if the time scales of fast oscillations and envelope dynamics are well separated. We investigate the parameter regions where low frequency fluctuations occur and compute their Lyapunov spectra. Using the geometric singular perturbation theory, we study this intermittent chaotic behavior and characterize these solutions as bursting slow-fast oscillations.

Manipulation of Bloch surface waves: from subwavelength focusing to nondiffracting beam

Science.gov (United States)

Kim, Myun-Sik; Herzig, Hans Peter

2018-01-01

We present a different type of electromagnetic surface wave than a surface plasmon polariton (SPP), called Bloch surface wave (BSW). BSWs are sustained by dielectric multilayers, and therefore they do not suffer from dissipation. Their propagation length is unbeatably long, e.g., over several millimeters. Thanks to this feature, larger integrations of 2D photonic chips are realizable. To do this, 2D optical components and corresponding techniques are necessary to manipulate in-plane propagation of surface waves. We overview recent progresses of the BSW research on manipulation techniques and developed components. Our study will provide a good guideline of the BSW components for users.

Third harmonic generation by Bloch-oscillating electrons in a quasioptical array

International Nuclear Information System (INIS)

Ghosh, A.W.; Wanke, M.C.; Allen, S.J.; Wilkins, J.W.

1999-01-01

We compute the third harmonic field generated by Bloch-oscillating electrons in a quasioptical array of superlattices under THz irradiation. The third harmonic power transmitted oscillates with the internal electric field, with nodes associated with Bessel functions in eEd/ℎω. The nonlinear response of the array causes the output power to be a multivalued function of the incident laser power. The output can be optimized by adjusting the frequency of the incident pulse to match one of the Fabry-Pacute erot resonances in the substrate. Within the transmission-line model of the array, the maximum conversion efficiency is 0.1%. copyright 1999 American Institute of Physics

Quantum Mechanical Balance Equation Approach to Semiconductor Device Simulation

National Research Council Canada - National Science Library

Cui, Long

1997-01-01

This research project was focused on the development of a quantum mechanical balance equation based device simulator that can model advanced, compound, submicron devices, under all transport conditions...

The astigmatism factor for semiconductor injection lasers

International Nuclear Information System (INIS)

Zhao Yiguang; Guo Changzhi

1988-03-01

The relations between the astigmatism factor and the waveguide structure, working conditions etc. were accurately calculated, using a method for deriving a self-consistent solution of the optical field equation and the carrier diffusion equation. Various theoretical models regarding the spontaneous emission factor were analyzed and compared. The results show that there is a difference between astigmatism factors of semiconductor lasers with different waveguide structures. W. Streifer's results, for a model having an invariable distribution of the complex refractive index, are larger by a factor of 6 to 80 than the accurate calculated value. K. Petermann's theory regarding the spontaneous emission factor is more appropriate than other theories. (author). 19 refs, 6 figs

Philippe Bloch: Reducing distance between experiments and CERN

CERN Multimedia

2009-01-01

With its unique combination of several hundred staff members and thousands of users from around the world sharing offices and physics data and profiting from mutually beneficial exchanges of know-how and expertise, the PH Department is a good example of a successful worldwide collaboration, set up as it was to construct and run the Laboratory’s physics experiments. The PH Depart-ment has always played host to thousands of users that contribute to CERN experiments and work on them, and whose numbers are set to grow in the years to come. With his long-standing experience as a user and then as the head of the CERN group within the CMS collaboration, Philippe Bloch, the new PH Department Head, is in favour of closer links between the Department and the experiments. "I think that the PH management should have a direct link to the experiments, and to do so we are holding regular management team meetings comprising members of the Department’s management and the e...

Boundedness and compactness of a new product-type operator from a general space to Bloch-type spaces

Directory of Open Access Journals (Sweden)

Stevo Stević

2016-09-01

Full Text Available Abstract We characterize the boundedness and compactness of a product-type operator, which, among others, includes all the products of the single composition, multiplication, and differentiation operators, from a general space to Bloch-type spaces. We also give some upper and lower bounds for the norm of the operator.

Schroedinger equation from 0 (h/2π) to o(h/2πinfinity)

International Nuclear Information System (INIS)

Voros, A.

1985-08-01

The Balian and Bloch idea, that the semiclassical treatment of the Schroedinger equation can be carried out exactly to all orders, o(h/2πinfinity), has been explicitly confirmed upon the time-independent equation with a polynomial potential V(q) in one degree of freedom. The global analytic structure of certain functions, which encode the full eigenvalue distribution, has indeed been computed in great detail with the complex WKB method, yielding a structure called a resurgence algebra. In the special case V(q) = q 2 sub(M), this leads to sum rules for the eigenvalues, which have been verified numerically. Inasmuch as the leading order 0(h/2π) of the WKB expansion amounts to the stationary phase evaluation of the Feynman path integral, it is a yet unsolved challenge to reproduce our results by an exact analysis of this path integral using a generalized saddle-point treatment

Spin-dependent Hall effect in degenerate semiconductors: a theoretical study

Energy Technology Data Exchange (ETDEWEB)

Idrish Miah, M [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)], E-mail: m.miah@griffith.edu.au

2008-10-15

The spin-dependent Hall (SDH) effect in degenerate semiconductors is investigated theoretically. Starting from a two-component drift-diffusion equation, an expression for SDH voltage (V{sub SDH}) is derived, and drift and diffusive contributions to V{sub SDH} are studied. For the possible enhancement of the diffusive part, degenerate and nondegenerate cases are examined. We find that due to an increase in the diffusion coefficient V{sub SDH} increases in a degenerate semiconductor, consistent with the experimental observations. The expression for V{sub SDH} is reduced in three limiting cases, namely diffusive, drift-diffusion crossover and drift, and is analysed. The results agree with those obtained in recent theoretical investigations.

Spin-dependent Hall effect in degenerate semiconductors: a theoretical study

International Nuclear Information System (INIS)

Idrish Miah, M

2008-01-01

The spin-dependent Hall (SDH) effect in degenerate semiconductors is investigated theoretically. Starting from a two-component drift-diffusion equation, an expression for SDH voltage (V SDH ) is derived, and drift and diffusive contributions to V SDH are studied. For the possible enhancement of the diffusive part, degenerate and nondegenerate cases are examined. We find that due to an increase in the diffusion coefficient V SDH increases in a degenerate semiconductor, consistent with the experimental observations. The expression for V SDH is reduced in three limiting cases, namely diffusive, drift-diffusion crossover and drift, and is analysed. The results agree with those obtained in recent theoretical investigations.

Motives and algebraic cycles a celebration in honour of Spencer J. Bloch

CERN Document Server

Jeu, Rob de; Lewis, James D

2009-01-01

Spencer J. Bloch has, and continues to have, a profound influence on the subject of Algebraic K-Theory, Cycles and Motives. This book, which is comprised of a number of independent research articles written by leading experts in the field, is dedicated in his honour, and gives a snapshot of the current and evolving nature of the subject. Some of the articles are written in an expository style, providing a perspective on the current state of the subject to those wishing to learn more about it. Others are more technical, representing new developments and making them especially interesting to res

Semiconductor Manufacturing equipment introduction

International Nuclear Information System (INIS)

Im, Jong Sun

2001-02-01

This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

Ultrafast pulse amplification in mode-locked vertical external-cavity surface-emitting lasers

Energy Technology Data Exchange (ETDEWEB)

Böttge, C. N., E-mail: boettge@optics.arizona.edu; Hader, J.; Kilen, I.; Moloney, J. V. [College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721 (United States); Koch, S. W. [College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721 (United States); Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg (Germany)

2014-12-29

A fully microscopic many-body Maxwell–semiconductor Bloch model is used to investigate the influence of the non-equilibrium carrier dynamics on the short-pulse amplification in mode-locked semiconductor microlaser systems. The numerical solution of the coupled equations allows for a self-consistent investigation of the light–matter coupling dynamics, the carrier kinetics in the saturable absorber and the multiple-quantum-well gain medium, as well as the modification of the light field through the pulse-induced optical polarization. The influence of the pulse-induced non-equilibrium modifications of the carrier distributions in the gain medium and the saturable absorber on the single-pulse amplification in the laser cavity is identified. It is shown that for the same structure, quantum wells, and gain bandwidth the non-equilibrium carrier dynamics lead to two preferred operation regimes: one with pulses in the (sub-)100 fs-regime and one with multi-picosecond pulses. The recovery time of the saturable absorber determines in which regime the device operates.

Modeling space-charge-limited currents in organic semiconductors: Extracting trap density and mobility

KAUST Repository

Dacuñ a, Javier; Salleo, Alberto

2011-01-01

We have developed and have applied a mobility edge model that takes drift and diffusion currents to characterize the space-charge-limited current in organic semiconductors into account. The numerical solution of the drift-diffusion equation allows

Integrable motion of curves in self-consistent potentials: Relation to spin systems and soliton equations

Energy Technology Data Exchange (ETDEWEB)

Myrzakulov, R.; Mamyrbekova, G.K.; Nugmanova, G.N.; Yesmakhanova, K.R. [Eurasian International Center for Theoretical Physics and Department of General and Theoretical Physics, Eurasian National University, Astana 010008 (Kazakhstan); Lakshmanan, M., E-mail: lakshman@cnld.bdu.ac.in [Centre for Nonlinear Dynamics, School of Physics, Bharathidasan University, Tiruchirapalli 620 024 (India)

2014-06-13

Motion of curves and surfaces in R{sup 3} lead to nonlinear evolution equations which are often integrable. They are also intimately connected to the dynamics of spin chains in the continuum limit and integrable soliton systems through geometric and gauge symmetric connections/equivalence. Here we point out the fact that a more general situation in which the curves evolve in the presence of additional self-consistent vector potentials can lead to interesting generalized spin systems with self-consistent potentials or soliton equations with self-consistent potentials. We obtain the general form of the evolution equations of underlying curves and report specific examples of generalized spin chains and soliton equations. These include principal chiral model and various Myrzakulov spin equations in (1+1) dimensions and their geometrically equivalent generalized nonlinear Schrödinger (NLS) family of equations, including Hirota–Maxwell–Bloch equations, all in the presence of self-consistent potential fields. The associated gauge equivalent Lax pairs are also presented to confirm their integrability. - Highlights: • Geometry of continuum spin chain with self-consistent potentials explored. • Mapping on moving space curves in R{sup 3} in the presence of potential fields carried out. • Equivalent generalized nonlinear Schrödinger (NLS) family of equations identified. • Integrability of identified nonlinear systems proved by deducing appropriate Lax pairs.

High-order-harmonic generation from solids: The contributions of the Bloch wave packets moving at the group and phase velocities

Science.gov (United States)

Du, Tao-Yuan; Huang, Xiao-Huan; Bian, Xue-Bin

2018-01-01

We study numerically the Bloch electron wave-packet dynamics in periodic potentials to simulate laser-solid interactions. We introduce an alternative perspective in the coordinate space combined with the motion of the Bloch electron wave packets moving at group and phase velocities under the laser fields. This model interprets the origins of the two contributions (intra- and interband transitions) in the high-order harmonic generation (HHG) processes by investigating the local and global behaviours of the wave packets. It also elucidates the underlying physical picture of the HHG intensity enhancement by means of carrier-envelope phase, chirp, and inhomogeneous fields. It provides a deep insight into the emission of high-order harmonics from solids. This model is instructive for experimental measurements and provides an alternative avenue to distinguish mechanisms of the HHG from solids in different laser fields.

A variance-reduced electrothermal Monte Carlo method for semiconductor device simulation

Energy Technology Data Exchange (ETDEWEB)

Muscato, Orazio; Di Stefano, Vincenza [Univ. degli Studi di Catania (Italy). Dipt. di Matematica e Informatica; Wagner, Wolfgang [Weierstrass-Institut fuer Angewandte Analysis und Stochastik (WIAS) Leibniz-Institut im Forschungsverbund Berlin e.V., Berlin (Germany)

2012-11-01

This paper is concerned with electron transport and heat generation in semiconductor devices. An improved version of the electrothermal Monte Carlo method is presented. This modification has better approximation properties due to reduced statistical fluctuations. The corresponding transport equations are provided and results of numerical experiments are presented.

Design of Slow and Fast Light Photonic Crystal Waveguides for Single-photon Emission Using a Bloch Mode Expansion Technique

DEFF Research Database (Denmark)

de Lasson, Jakob Rosenkrantz; Rigal, B.; Kapon, E.

We design slow and fast light photonic crystal waveguides for single-photon emission using a Bloch mode expansion and scattering matrix technique. We propose slow light designs that increase the group index-waveguide mode volume ratio for larger Purcell enhancement, and address efficient slow-to-...

Microscopic theory of photon-correlation spectroscopy in strong-coupling semiconductors

Energy Technology Data Exchange (ETDEWEB)

Schneebeli, Lukas

2009-11-27

would be a great contribution in the growing field of quantum optics in semiconductors. The efforts in QD systems are again driven by the atomic systems which not only have shown the vacuum Rabi splitting, but also the second rung, e.g. via direct spectroscopy and via photon-correlation measurements. In this thesis, it is shown that spectrally resolved photon-statistics measurements of the resonance fluorescence from realistic semiconductor quantum-dot systems allow for high contrast identification of the two-photon strong-coupling states. Using a microscopic theory, the second-rung resonance of Jaynes-Cummings ladder is analyzed and optimum excitation conditions are determined. The computed photon-statistics spectrum displays gigantic, experimentally robust resonances at the energetic positions of the second-rung emission. The resonance fluorescence equations are derived and solved for strong-coupling semiconductor quantum-dot systems using a fully quantized multimode theory and a cluster-expansion approach. A reduced model is developed to explain the origin of auto- and cross-correlation resonances in the two-photon emission spectrum of the fluorescent light. These resonances are traced back to the two-photon strong-coupling states of Jaynes-Cummings ladder. The accuracy of the reduced model is verified via numerical solution of the resonance fluorescence equations. The analysis reveals the direct relation between the squeezed-light emission and the strong-coupling states in optically excited semiconductor systems. (orig.)

Effects of gamma radiations on certain tissues of heteropneustes fossils bloch

International Nuclear Information System (INIS)

Purohit, R.K.; Rathore, N.; Ahluwalia, P.; Srivastava, M.; Gupta, M.L.

1992-01-01

In the present investigation effect of gamma radiation on certain tissues (kidney, stomach and gills) of Heteropneustes fossilis Bloch, an Indian Cat fish, were studied. The fish were irradiated with 10 Gy of gamma radiations at the dose rate of 1.60 Gy/minute from a 60 Co source. Five fish were autopsied at each post-irradiation time of 1,2,3,7,15 and 30 days. Radiation induced histopathology was observed in all the tissues studied. The radio lesions appeared on day-1 after exposure which became exaggerated on day-2 and 3. Signs of recovery were noticed on day-7 which progressed on day-15 and normal histology was observed on day-30. (author). 18 refs

Multiple Bloch surface waves in visible region of light at the interfaces between rugate filter/rugate filter and rugate filter/dielectric slab/rugate filter

Science.gov (United States)

Ullah Manzoor, Habib; Manzoor, Tareq; Hussain, Masroor; Manzoor, Sanaullah; Nazar, Kashif

2018-04-01

Surface electromagnetic waves are the solution of Maxwell’s frequency domain equations at the interface of two dissimilar materials. In this article, two canonical boundary-value problems have been formulated to analyze the multiplicity of electromagnetic surface waves at the interface between two dissimilar materials in the visible region of light. In the first problem, the interface between two semi-infinite rugate filters having symmetric refractive index profiles is considered and in the second problem, to enhance the multiplicity of surface electromagnetic waves, a homogeneous dielectric slab of 400 nm is included between two semi-infinite symmetric rugate filters. Numerical results show that multiple Bloch surface waves of different phase speeds, different polarization states, different degrees of localization and different field profiles are propagated at the interface between two semi-infinite rugate filters. Having two interfaces when a homogeneous dielectric layer is placed between two semi-infinite rugate filters has increased the multiplicity of electromagnetic surface waves.

An analysis of the extension of a ZnO piezoelectric semiconductor nanofiber under an axial force

Science.gov (United States)

Zhang, Chunli; Wang, Xiaoyuan; Chen, Weiqiu; Yang, Jiashi

2017-02-01

This paper presents a theoretical analysis on the axial extension of an n-type ZnO piezoelectric semiconductor nanofiber under an axial force. The phenomenological theory of piezoelectric semiconductors consisting of Newton’s second law of motion, the charge equation of electrostatics and the conservation of charge was used. The equations were linearized for small axial force and hence small electron concentration perturbation, and were reduced to one-dimensional equations for thin fibers. Simple and analytical expressions for the electromechanical fields and electron concentration in the fiber were obtained. The fields are either totally or partially described by hyperbolic functions relatively large near the ends of the fiber and change rapidly there. The behavior of the fields is sensitive to the initial electron concentration and the applied axial force. For higher initial electron concentrations the fields are larger near the ends and change more rapidly there.

Analog direct-modulation behavior of semiconductor laser transmitters using optical FM demodulation

NARCIS (Netherlands)

Yabre, G.S.

1998-01-01

In this paper, we report a theoretical investigation of the analog modulation performance of a semiconductor laser transmitter which employs the direct optical FM demodulation. This analysis is based on the rate equations in which Langevin noise functions are included. The optical FM response has

A new computational method for simulation of charge transport in semiconductor radiation detectors

International Nuclear Information System (INIS)

Holban, I.

1993-01-01

An effective computational method for simulation of charge transport in semiconductor radiation detectors is the purpose of the present work. Basic equations for analysis include (1) Poisson's equations, (2) continuity equation for electrons and holes, (3) rate equations for deep levels, (4) current equation for electrons and holes and (5) boundary conditions. The system of equations is discretized and equidistant space and time grids is brought. The nonlinearity of the problem is overcome by using Newton-Raphson iteration scheme. Instead of solving a nonlinear boundary problem we resolve a linear matrix equation. Our computation procedure becomes very efficient using a sparse matrix. The computed program allows to calculate the charge collection efficiency and transient response for arbitrary electric fields when trapping and detrapping effects are present. The earlier literature results are reproduced. (Author)

Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

Science.gov (United States)

Zhang, Liping; Jaroniec, Mietek

2018-02-01

Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

A complete multifluid model for bipolar semiconductors, with interacting carriers, phonons, and photons

Science.gov (United States)

Rossani, A.

2017-12-01

If electrons (e) and holes (h) in metals or semiconductors are heated to the temperatures T_e and T_h greater than the lattice temperature, the electron-phonon interaction causes energy relaxation. In the non-uniform case a momentum relaxation occurs as well. In view of such an application, a new model, based on an asymptotic procedure for solving the kinetic equations of carriers, phonons, and photons, is proposed, which gives naturally the displaced Maxwellian at the leading order. Several generation-recombination (GR) events occur in bipolar semiconductors. In the presence of photons the most important ones are the radiative GR events, direct, indirect, and exciton-catalyzed. Phonons and photons are treated here as a participating species, with their own equation. All the phonon-photon interactions are accounted for. Moreover, carrier-photon (Compton) interactions are introduced, which make complete the model. After that, balance equations for the electron number, hole number, energy densities, and momentum densities are constructed, which constitute now a system of macroscopic equations for the chemical potentials (carriers), the temperatures (carriers and bosons), and the drift velocities (carriers and bosons). In the drift-diffusion approximation the constitutive laws are derived and the Onsager relations recovered, even in the presence of an external magnetic field.

Electronic collective modes and instabilities on semiconductor surfaces. I

International Nuclear Information System (INIS)

Muramatsu, A.; Hanke, W.

1984-01-01

A Green's-function theory of electronic collective modes is presented which leads to a practical scheme for a microscopic determination of surface elementary excitations in conducting as well as nonconducting solids. Particular emphasis is placed on semiconductor surfaces where the jellium approximation is not valid, due to the importance of density fluctuations on a microscopic scale (reflected in the local-field effects). Starting from the Bethe-Salpeter equation for the two-particle Green's function of the surface system, an equation of motion for the electron-hole pair is obtained. Its solutions determine the energy spectra, lifetimes, and amplitudes of the surface elementary excitations, i.e., surface plasmons, excitons, polaritons, and magnons. Exchange and correlation effects are taken into account through the random-phase and time-dependent Hartree-Fock (screened electron-hole attraction) approximations. The formalism is applied to the study of electronic (charge- and spin-density) instabilities at covalent semiconductor surfaces. Quantitative calculations for an eight-layer Si(111) slab display an instability of the ideal paramagnetic surface with respect to spin-density waves with wavelength nearly corresponding to (2 x 1) and (7 x 7) superstructures

Propagation of extensional waves in a piezoelectric semiconductor rod

Directory of Open Access Journals (Sweden)

C.L. Zhang

2016-04-01

Full Text Available We studied the propagation of extensional waves in a thin piezoelectric semiconductor rod of ZnO whose c-axis is along the axis of the rod. The macroscopic theory of piezoelectric semiconductors was used which consists of the coupled equations of piezoelectricity and the conservation of charge. The problem is nonlinear because the drift current is the product of the unknown electric field and the unknown carrier density. A perturbation procedure was used which resulted in two one-way coupled linear problems of piezoelectricity and the conservation of charge, respectively. The acoustic wave and the accompanying electric field were obtained from the equations of piezoelectricity. The motion of carriers was then determined from the conservation of charge using a trigonometric series. It was found that while the acoustic wave was approximated by a sinusoidal wave, the motion of carriers deviates from a sinusoidal wave qualitatively because of the contributions of higher harmonics arising from the originally nonlinear terms. The wave crests become higher and sharper while the troughs are shallower and wider. This deviation is more pronounced for acoustic waves with larger amplitudes.

Effects of Bimolecular Recombination on Impedance Spectra in Organic Semiconductors: Analytical Approach.

Science.gov (United States)

Takata, Masashi; Takagi, Kenichiro; Nagase, Takashi; Kobayashi, Takashi; Naito, Hiroyoshi

2016-04-01

An analytical expression for impedance spectra in the case of double injection (both electrons and holes are injected into an organic semiconductor thin film) has been derived from the basic transport equations (the current density equation, the continuity equation and the Possion's equation). Capacitance-frequency characteristics calculated from the analytical expression have been examined at different recombination constants and different values of mobility balance defined by a ratio of electron mobility to hole mobility. Negative capacitance appears when the recombination constant is lower than the Langevin recombination constant and when the value of the mobility balance approaches unity. These results are consistent with the numerical results obtained by a device simulator (Atlas, Silvaco).

Kinetic theory of thermotransport of polar semiconductors: Degenerate limit

Energy Technology Data Exchange (ETDEWEB)

Rangel-Huerta, A. [Facultad de Ciencias de la Computacion Benemerita, Universidad Autonoma de Puebla, 14 Sur y San Claudio C.U., Puebla 72570 (Mexico); Rodriguez-Meza, M.A. [Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico D.F. 11801 (Mexico)

2005-08-01

We develop a kinetic theory approach from the semiclassical Boltzmann transport equation for the thermotransport of electrons in degenerate polar semiconductors. The method of moments applied to the Boltzmann equation gives us a set of hydrodynamical equations which are closed up to thirteen relevant variables, including energy density, the stress tensor and the heat flux in the description. The closure of the balance equations is achieved by evaluating the higher order momenta, as well as the production terms, through a non equilibrium distribution function coming from the maximum entropy principle. We assume that electronoptical polar phonon interaction is the leading scattering process in order to obtain analytical expressions for both, the characteristic relaxation times and the usual thermoelectric coefficients. We also show that in this case the Onsager symmetry relationship is not satisfied. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Delay differential equations for mode-locked semiconductor lasers.

Science.gov (United States)

Vladimirov, Andrei G; Turaev, Dmitry; Kozyreff, Gregory

2004-06-01

We propose a new model for passive mode locking that is a set of ordinary delay differential equations. We assume a ring-cavity geometry and Lorentzian spectral filtering of the pulses but do not use small gain and loss and weak saturation approximations. By means of a continuation method, we study mode-locking solutions and their stability. We find that stable mode locking can exist even when the nonlasing state between pulses becomes unstable.

Emergence of resonant mode-locking via delayed feedback in quantum dot semiconductor lasers.

Science.gov (United States)

Tykalewicz, B; Goulding, D; Hegarty, S P; Huyet, G; Erneux, T; Kelleher, B; Viktorov, E A

2016-02-22

With conventional semiconductor lasers undergoing external optical feedback, a chaotic output is typically observed even for moderate levels of the feedback strength. In this paper we examine single mode quantum dot lasers under strong optical feedback conditions and show that an entirely new dynamical regime is found consisting of spontaneous mode-locking via a resonance between the relaxation oscillation frequency and the external cavity repetition rate. Experimental observations are supported by detailed numerical simulations of rate equations appropriate for this laser type. The phenomenon constitutes an entirely new mode-locking mechanism in semiconductor lasers.

Polarization-insensitive quantum-dot coupled quantum-well semiconductor optical amplifier

International Nuclear Information System (INIS)

Huang Lirong; Yu Yi; Tian Peng; Huang Dexiu

2009-01-01

The optical gain of a quantum-dot semiconductor optical amplifier is usually seriously dependent on polarization; we propose a quantum-dot coupled tensile-strained quantum-well structure to obtain polarization insensitivity. The tensile-strained quantum well not only serves as a carrier injection layer of quantum dots but also offers gain to the transverse-magnetic mode. Based on the polarization-dependent coupled carrier rate-equation model, we study carrier competition among quantum well and quantum dots, and study the polarization dependence of the quantum-dot coupled quantum-well semiconductor optical amplifier. We also analyze polarization-dependent photon-mediated carrier distribution among quantum well and quantum dots. It is shown that polarization-insensitive gain can be realized by optimal design

Quantum wells, wires and dots theoretical and computational physics of semiconductor nanostructures

CERN Document Server

Harrison, Paul

2016-01-01

Quantum Wells, Wires and Dots provides all the essential information, both theoretical and computational, to develop an understanding of the electronic, optical and transport properties of these semiconductor nanostructures. The book will lead the reader through comprehensive explanations and mathematical derivations to the point where they can design semiconductor nanostructures with the required electronic and optical properties for exploitation in these technologies. This fully revised and updated 4th edition features new sections that incorporate modern techniques and extensive new material including: - Properties of non-parabolic energy bands - Matrix solutions of the Poisson and Schrodinger equations - Critical thickness of strained materials - Carrier scattering by interface roughness, alloy disorder and impurities - Density matrix transport modelling -Thermal modelling Written by well-known authors in the field of semiconductor nanostructures and quantum optoelectronics, this user-friendly guide is pr...

Dilation of non-quasifree dissipative evolution

Energy Technology Data Exchange (ETDEWEB)

Varilly, J C [Costa Rica Univ., San Jose. Escuela de Matematica

1981-03-01

A semigroup evolution for the 1/2-spin which admits a conservative dilation is known to be governed by a Bloch equation in a standard form. Here we construct a conservative dilation directly from the Bloch equation, thus yielding an example of a dilation scheme for an evolution which is not quasifree. Moreover, we show that this conservative evolution is never ergodic in the non-quasifree case.

Semiconductor physics

CERN Document Server

Böer, Karl W

2018-01-01

This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

Modeling bidirectionally coupled single-mode semiconductor lasers

International Nuclear Information System (INIS)

Mulet, Josep; Masoller, Cristina; Mirasso, Claudio R.

2002-01-01

We develop a dynamical model suitable for the description of two mutually coupled semiconductor lasers in a face-to-face configuration. Our study considers the propagation of the electric field along the compound system as well as the evolution of the carrier densities within each semiconductor laser. Mutual injection, passive optical feedback, and multiple reflections are accounted for in this framework, although under weak to moderate coupling conditions. We systematically describe the effect of the coupling strength on the spectrum of monochromatic solutions and on the respective dynamical behavior. By assuming single-longitudinal-mode operation, weak mutual coupling and slowly varying approximation, the dynamical model can be reduced to rate equations describing the mutual injection from one laser to its counterpart and vice versa. A good agreement between the complete and simplified models is found for small coupling. For larger coupling, higher-order terms lead to a smaller threshold reduction, reflected itself in the spectrum of the monochromatic solutions and in the dynamics of the optical power

A theoretical analysis for gigabit/second pulse code modulation of semiconductor lasers

DEFF Research Database (Denmark)

Danielsen, Magnus

1976-01-01

Investigation of the rate equations of a semiconductor laser suggests that bit rates of 3-4 Gbit/s can be achieved. Delay, ringing transients, and charge-storage effects can be removed by adjusting the dc-bias current and the peak and width of the current pulse to values prescribed by simple...

Matter-wave solitons and finite-amplitude Bloch waves in optical lattices with a spatially modulated nonlinearity

OpenAIRE

Zhang, Jie-Fang; Li, Yi-Shen; Meng, Jianping; Wu, Lei; Malomed, Boris A.

2010-01-01

We investigate solitons and nonlinear Bloch waves in Bose-Einstein condensates trapped in optical lattices. By introducing specially designed localized profiles of the spatial modulation of the attractive nonlinearity, we construct an infinite number of exact soliton solutions in terms of the Mathieu and elliptic functions, with the chemical potential belonging to the semi-infinite bandgap of the optical-lattice-induced spectrum. Starting from the exact solutions, we employ the relaxation met...

NATO Advanced Study Institute on Physics of Submicron Semiconductor Devices

CERN Document Server

Ferry, David; Jacoboni, C

1988-01-01

The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES...................

Theory of coherent time-dependent transport in one-dimensional multiband semiconductor super-lattices

DEFF Research Database (Denmark)

Rotvig, J.; Smith, H.; Jauho, Antti-Pekka

1996-01-01

We present an analytical study of one-dimensional semiconductor superlattices in external electric fields, which may be time dependent. A number of general results for the (quasi)energies and eigenstates are derived. An equation of motion for the density matrix is obtained for a two-band model...

Exceptionally slow rise in differential reflectivity spectra of excitons in GaN: effect of excitation-induced dephasing

International Nuclear Information System (INIS)

Stanton, C.J.; Kenrow, J.; El Sayed, K.; Jho, Y.D.; Kim, D.S.; Song, J.J.; Fischer, Arthur Joseph

2004-01-01

Femtosecond differential reflectivity spectroscopy (DRS) and four-wave mixing (FWM) experiments were performed simultaneously to study the initial temporal dynamics of the exciton line-shapes in GaN epilayers. Beats between the A-B excitons were found only for positive time delay in both DRS and FWM experiments. The rise time at negative time delay for the DRS was much slower than the FWM signal or differential transmission spectroscopy at the exciton resonance. A numerical solution of a six band semiconductor Bloch equation model including nonlinearities at the Hartree-Fock level shows that this slow rise in the DRS results from excitation induced dephasing, that is, the strong density dependence of the dephasing time which changes with the laser excitation energy.

Plasmonic Photonic-Crystal Slabs: Visualization of the Bloch Surface Wave Resonance for an Ultrasensitive, Robust and Reusable Optical Biosensor

Directory of Open Access Journals (Sweden)

Alexander V. Baryshev

2014-12-01

Full Text Available A one-dimensional photonic crystal (PhC with termination by a metal film—a plasmonic photonic-crystal slab—has been theoretically analyzed for its optical response at a variation of the dielectric permittivity of an analyte and at a condition simulating the molecular binding event. Visualization of the Bloch surface wave resonance (SWR was done with the aid of plasmon absorption in a dielectric/metal/dielectric sandwich terminating a PhC. An SWR peak in spectra of such a plasmonic photonic crystal (PPhC slab comprising a noble or base metal layer was shown to be sensitive to a negligible variation of refractive index of a medium adjoining to the slab. As a consequence, the considered PPhC-based optical sensors exhibited an enhanced sensitivity and a good robustness in comparison with the conventional surface-plasmon and Bloch surface wave sensors. The PPhC biosensors can be of practical importance because the metal layer is protected by a capping dielectric layer from contact with analytes and, consequently, from deterioration.

Development of semiconductor electronics

International Nuclear Information System (INIS)

Bardeen, John.

1977-01-01

In 1931, Wilson applied Block's theory about the energy bands for the motion of electrons in a crystal lattice to semiconductors and showed that conduction can take place in two different ways, by electrons and by holes. Not long afterwards Frenkel showed that these carriers can flow by diffusion in a concentration gradient as well as under the influence of an electric field and wrote down equations for the current flow. The third major contribution, in the late 1930's was the explanation of rectification at a metalsemiconductor contact by Mott and more completely by Schottky. In late 1947 the first transistor of the point contact type was invented by Brattin, Shockley and Bardeen. Then after single crystals of Ge were grown, the junction transistor was developed by the same group. The first silicon transistors appeared in 1954. Then an important step was discovery of the planar transistor by Hoenri in 1960 which led to development of integrated circuits by 1962. Many transistors are produced by batch processing on a slice of silicon. Then in 1965 Mos (Metal-Oxide Semiconductor) transistor and in 1968 LSI (Large Scale Intergration circuits) were developed. Aside from electronic circuits, there are many other applications of semiconductors, including junction power rectifiers, junction luminescence (including lasers), solar batteries, radiation detectors, microwave oscillators and charged-coupled devices for computer memories and devices. One of the latest developments is a microprocessor with thousands of transistors and associated circuitry on a single small chip of silicon. It can be programmed to provide a variety of circuit functions, thus it is not necessary to go through the great expense of LSI's for each desired function, but to use standard microprocessors and program to do the job

The Electrical Characteristics of The N-Organic Semiconductor/P-Inorganic Semiconductor Diode

International Nuclear Information System (INIS)

Aydin, M. E.

2008-01-01

n-organic semiconductor (PEDOT) / p-inorganic semiconductor Si diode was formed by deep coating method. The method has been achieved by coating n-inorganic semiconductor PEDOT on top of p-inorganic semiconductor. The n-organic semiconductor PEDOT/ p-inorganic semiconductor diode demonstrated rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The barrier height , ideality factor values were obtained as of 0.88 eV and 1.95 respectively. The diode showed non-ideal I-V behavior with an ideality factor greater than unity that could be ascribed to the interfacial layer

Semiconductor Physical Electronics

CERN Document Server

Li, Sheng

2006-01-01

Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

Extension of spatiotemporal chaos in glow discharge-semiconductor systems.

Science.gov (United States)

Akhmet, Marat; Rafatov, Ismail; Fen, Mehmet Onur

2014-12-01

Generation of chaos in response systems is discovered numerically through specially designed unidirectional coupling of two glow discharge-semiconductor systems. By utilizing the auxiliary system approach, [H. D. I. Abarbanel, N. F. Rulkov, and M. M. Sushchik, Phys. Rev. E 53, 4528-4535 (1996)] it is verified that the phenomenon is not a chaos synchronization. Simulations demonstrate various aspects of the chaos appearance in both drive and response systems. Chaotic control is through the external circuit equation and governs the electrical potential on the boundary. The expandability of the theory to collectives of glow discharge systems is discussed, and this increases the potential of applications of the results. Moreover, the research completes the previous discussion of the chaos appearance in a glow discharge-semiconductor system [D. D. Šijačić U. Ebert, and I. Rafatov, Phys. Rev. E 70, 056220 (2004).].

Fundamentals of semiconductor devices

CERN Document Server

Lindmayer, Joseph

1965-01-01

Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

Near-field imaging of light propagation in photonic crystal waveguides: Explicit role of Bloch harmonics

DEFF Research Database (Denmark)

Bozhevolnyi, Sergey I.; Volkov, V.S.; Søndergaard, Thomas

2002-01-01

We employ a collection scanning near-field optical microscope (SNOM) to image the propagation of light at telecommunication wavelengths along straight and bent regions of silicon-on-insulator photonic crystal waveguides (PCWs) formed by removing a single row of holes in the triangular 410-nm...... the interference between a quasihomogeneous background field and Bloch harmonics of the PCW mode, we account for spatial frequency spectra of the intensity variations and determine the propagation constant of the PCW mode at 1520 nm. The possibilities and limitations of SNOM imaging for the characterization...

NUMERICAL METHOD OF MIXED FINITE VOLUME-MODIFIED UPWIND FRACTIONAL STEP DIFFERENCE FOR THREE-DIMENSIONAL SEMICONDUCTOR DEVICE TRANSIENT BEHAVIOR PROBLEMS

Institute of Scientific and Technical Information of China (English)

Yirang YUAN; Qing YANG; Changfeng LI; Tongjun SUN

2017-01-01

Transient behavior of three-dimensional semiconductor device with heat conduction is described by a coupled mathematical system of four quasi-linear partial differential equations with initial-boundary value conditions.The electric potential is defined by an elliptic equation and it appears in the following three equations via the electric field intensity.The electron concentration and the hole concentration are determined by convection-dominated diffusion equations and the temperature is interpreted by a heat conduction equation.A mixed finite volume element approximation,keeping physical conservation law,is used to get numerical values of the electric potential and the accuracy is improved one order.Two concentrations and the heat conduction are computed by a fractional step method combined with second-order upwind differences.This method can overcome numerical oscillation,dispersion and decreases computational complexity.Then a three-dimensional problem is solved by computing three successive one-dimensional problems where the method of speedup is used and the computational work is greatly shortened.An optimal second-order error estimate in L2 norm is derived by using prior estimate theory and other special techniques of partial differential equations.This type of mass-conservative parallel method is important and is most valuable in numerical analysis and application of semiconductor device.

Trions in bulk and monolayer materials: Faddeev equations and hyperspherical harmonics.

Science.gov (United States)

Filikhin, I; Kezerashvili, R Ya; Tsiklauri, Sh M; Vlahovic, B

2018-03-23

The negatively T - and positively T + charged trions in bulk and monolayer semiconductors are studied in the effective mass approximation within the framework of a potential model. The binding energies of trions in various semiconductors are calculated by employing the Faddeev equation with the Coulomb potential in 3D configuration space. Results of calculations of the binding energies for T - are consistent with previous computational studies, while the T + is unbound for all considered cases. The binding energies of trions in monolayer semiconductors are calculated using the method of hyperspherical harmonics by employing the Keldysh potential. It is shown that 2D T - and T + trions are bound and the binding energy of the positive trion is always greater than for the negative trion due to the heavier effective mass of holes. Our calculations demonstrate that screening effects play an important role in the formation of bound states of trions in 2D semiconductors.

Compound Semiconductor Radiation Detector

International Nuclear Information System (INIS)

Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

2005-01-01

In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

Solid spectroscopy: semiconductors

International Nuclear Information System (INIS)

Silva, C.E.T.G. da

1983-01-01

Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

NARCIS (Netherlands)

2008-01-01

The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

Contacts to semiconductors

International Nuclear Information System (INIS)

Tove, P.A.

1975-08-01

Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

Extension of spatiotemporal chaos in glow discharge-semiconductor systems

International Nuclear Information System (INIS)

Akhmet, Marat; Fen, Mehmet Onur; Rafatov, Ismail

2014-01-01

Generation of chaos in response systems is discovered numerically through specially designed unidirectional coupling of two glow discharge-semiconductor systems. By utilizing the auxiliary system approach, [H. D. I. Abarbanel, N. F. Rulkov, and M. M. Sushchik, Phys. Rev. E 53, 4528–4535 (1996)] it is verified that the phenomenon is not a chaos synchronization. Simulations demonstrate various aspects of the chaos appearance in both drive and response systems. Chaotic control is through the external circuit equation and governs the electrical potential on the boundary. The expandability of the theory to collectives of glow discharge systems is discussed, and this increases the potential of applications of the results. Moreover, the research completes the previous discussion of the chaos appearance in a glow discharge-semiconductor system [D. D. Šijačić U. Ebert, and I. Rafatov, Phys. Rev. E 70, 056220 (2004).

Exact solutions for fermionic Green's functions in the Bloch-Nordsieck approximation of QED

International Nuclear Information System (INIS)

Kernemann, A.; Stefanis, N.G.

1989-01-01

A set of new closed-form solutions for fermionic Green's functions in the Bloch-Nordsieck approximation of QED is presented. A manifestly covariant phase-space path-integral method is applied for calculating the n-fermion Green's function in a classical external field. In the case of one and two fermions, explicit expressions for the full Green's functions are analytically obtained, with renormalization carried out in the modified minimal subtraction scheme. The renormalization constants and the corresponding anomalous dimensions are determined. The mass-shell behavior of the two-fermion Green's function is investigated in detail. No assumptions are made concerning the structure of asymptotic states and no IR cutoff is used in the calculations

Semiconductor spintronics

International Nuclear Information System (INIS)

Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

2007-01-01

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

Method of manufacturing a semiconductor sensor device and semiconductor sensor device

NARCIS (Netherlands)

2009-01-01

The invention relates to a method of manufacturing a semiconductor sensor device (10) for sensing a substance comprising a plurality of mutually parallel mesa-shaped semiconductor regions (1) which are formed on a surface of a semiconductor body (11) and which are connected at a first end to a first

A new approximation of Fermi-Dirac integrals of order 1/2 for degenerate semiconductor devices

Science.gov (United States)

AlQurashi, Ahmed; Selvakumar, C. R.

2018-06-01

There had been tremendous growth in the field of Integrated circuits (ICs) in the past fifty years. Scaling laws mandated both lateral and vertical dimensions to be reduced and a steady increase in doping densities. Most of the modern semiconductor devices have invariably heavily doped regions where Fermi-Dirac Integrals are required. Several attempts have been devoted to developing analytical approximations for Fermi-Dirac Integrals since numerical computations of Fermi-Dirac Integrals are difficult to use in semiconductor devices, although there are several highly accurate tabulated functions available. Most of these analytical expressions are not sufficiently suitable to be employed in semiconductor device applications due to their poor accuracy, the requirement of complicated calculations, and difficulties in differentiating and integrating. A new approximation has been developed for the Fermi-Dirac integrals of the order 1/2 by using Prony's method and discussed in this paper. The approximation is accurate enough (Mean Absolute Error (MAE) = 0.38%) and easy enough to be used in semiconductor device equations. The new approximation of Fermi-Dirac Integrals is applied to a more generalized Einstein Relation which is an important relation in semiconductor devices.

Influence of rotating in-plane field on vertical Bloch lines in the walls of second kind of dumbbell domains

International Nuclear Information System (INIS)

Sun, H.Y.; Hu, H.N.; Sun, Y.P.; Nie, X.F.

2004-01-01

Influence of rotating in-plane field on vertical Bloch lines in the walls of second kind of dumbbell domains (IIDs) was investigated, and a critical in-plane field range [H ip 1 ,H ip 2 ] of which vertical-Bloch lines (VBLs) annihilated in IIDs is found under rotating in-plane field (H ip 1 is the maximal critical in-plane-field of which hard domains remain stable, H ip 2 is the minimal critical in-plane-field of which all of the hard domains convert to soft bubbles (SBs, without VBLs)). It shows that the in-plane field range [H ip 1 , H ip 2 ] changes with the change of the rotating angle Δφ H ip 1 maintains stable, while H ip 2 decreases with the decreasing of rotating angle Δφ. Comparing it with the spontaneous shrinking experiment of IIDs under both bias field and in-plane field, we presume that under the application of in-plane field there exists a direction along which the VBLs in the domain walls annihilate most easily, and it is in the direction that domain walls are perpendicular to the in-plane field

Perturbation theory for the bloch electrons on strongly coupled chains in both uniform electric and magnetic fields

International Nuclear Information System (INIS)

Zhao, X.G.; Chen, S.G.

1992-01-01

In this paper, the energy spectrum and the wave functions for a tight-binding Bloch electron on coupled chains under the action of both uniform electric and magnetic fields are studied in detail. Exact results are obtained for the case when the coupling between chains is large by using the perturbation theory, from which it is found that the spectrum is that of two interspaced Stark ladders. The magnetic field dependence of the energy spectrum is also discussed

Influence of in-plane field on vertical Bloch line in the walls of the second kind of dumbbell domains at various temperatures

International Nuclear Information System (INIS)

Xu, J.P.; Liu, S.P.; Guo, G.X.; Zhen, C.M.; Tang, G.D.; Sun, H.Y.; Nie, X.F.

2004-01-01

The stability of vertical Bloch lines (VBLs) in the second kind of dumbbell domain (IIDs) walls in liquid phase epitaxy garnet bubble films subjected to an in-plane field at various temperatures is studied experimentally. It is found that there exists a critical in-plane field range depending on temperature, in which vertical Bloch lines (VBLs) in the second kind of IIDs walls are unstable, i.e., [Hip(1)(T),Hip(2)(T)]. Here, Hip(1)(T) is the initial critical in-plane field at which VBLs in the walls of IIDs annihilate; while Hip(2)(T) is the lowest in-plane field at which all VBLs in the walls of IIDs have annihilated completely. Also, the critical in-plane field range [Hip(1)(T),Hip(2)(T)],Hip(1)(T) and Hip(2)(T) all decrease with the temperature increasing. Hip(1)(T) and Hip(2)(T) reach zero at T0' and T0, respectively

Semiconductor statistics

CERN Document Server

Blakemore, J S

1987-01-01

In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

Möbius semiconductor nanostructures and deformation potential strain effects

DEFF Research Database (Denmark)

Lassen, Benny; Willatzen, Morten; Gravesen, Jens

2011-01-01

A discussion of Möbius nanostructures is presented with focus on (1) the accuracy of the approximate differential-geometry formalism by Gravesen and Willatzen and (2) to assess the influence of bending-induced strain on Schrödinger equation eigenstates in semiconductor Möbius structures....... The differential-geometry model assumed complete confinement of a quantum-mechanical particle to a zero-thickness Möbius structure where the shape was computed based on minimization of elastic bending energy only and imposing the relevant boundary conditions. In the latter work, while bending was accounted...... for in finding the shape of the Möbius structure it was, for simplicity, neglected altogether in determining the direct strain influence on electronic eigenstates. However, as is well-known, deformation-potential strain effects In many semiconductor materials can lead to important changes in not only the energy...

Semiconductor laser shearing interferometer

International Nuclear Information System (INIS)

Ming Hai; Li Ming; Chen Nong; Xie Jiaping

1988-03-01

The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

The relationship between spontaneous abortion and female workers in the semiconductor industry.

Science.gov (United States)

Kim, Heechan; Kwon, Ho-Jang; Rhie, Jeongbae; Lim, Sinye; Kang, Yun-Dan; Eom, Sang-Yong; Lim, Hyungryul; Myong, Jun-Pyo; Roh, Sangchul

2017-01-01

This study investigated the relationship between job type and the risk for spontaneous abortion to assess the reproductive toxicity of female workers in the semiconductor industry. A questionnaire survey was administered to current female workers of two semiconductor manufacturing plants in Korea. We included female workers who became pregnant at least 6 months after the start of their employment with the company. The pregnancy outcomes of 2,242 female workers who experienced 4,037 pregnancies were investigated. Personnel records were used to assign the subjects to one of three groups: fabrication process workers, packaging process workers, and clerical workers. To adjust for within-person correlations between pregnancies, a generalized estimating equation was used. The logistic regression analysis was limited to the first pregnancy after joining the company to satisfy the assumption of independence among pregnancies. Moreover, we stratified the analysis by time period (pregnancy in the years prior to 2008 vs. after 2009) to reflect differences in occupational exposure based on semiconductor production periods. The risk for spontaneous abortion in female semiconductor workers was not significantly higher for fabrication and packaging process workers than for clerical workers. However, when we stratified by time period, the odds ratio for spontaneous abortion was significantly higher for packaging process workers who became pregnant prior to 2008 when compared with clerical workers (odds ratio: 2.21; 95% confidence interval: 1.01-4.81). When examining the pregnancies of female semiconductor workers that occurred prior to 2008, packaging process workers showed a significantly higher risk for spontaneous abortions than did clerical workers. The two semiconductor production periods in our study (prior to 2008 vs. after 2009) had different automated processes, chemical exposure levels, and working environments. Thus, the conditions prior to 2008 may have increased the

On an adaptive time stepping strategy for solving nonlinear diffusion equations

International Nuclear Information System (INIS)

Chen, K.; Baines, M.J.; Sweby, P.K.

1993-01-01

A new time step selection procedure is proposed for solving non- linear diffusion equations. It has been implemented in the ASWR finite element code of Lorenz and Svoboda [10] for 2D semiconductor process modelling diffusion equations. The strategy is based on equi-distributing the local truncation errors of the numerical scheme. The use of B-splines for interpolation (as well as for the trial space) results in a banded and diagonally dominant matrix. The approximate inverse of such a matrix can be provided to a high degree of accuracy by another banded matrix, which in turn can be used to work out the approximate finite difference scheme corresponding to the ASWR finite element method, and further to calculate estimates of the local truncation errors of the numerical scheme. Numerical experiments on six full simulation problems arising in semiconductor process modelling have been carried out. Results show that our proposed strategy is more efficient and better conserves the total mass. 18 refs., 6 figs., 2 tabs

Towards predictive many-body calculations of phonon-limited carrier mobilities in semiconductors

Science.gov (United States)

Poncé, Samuel; Margine, Elena R.; Giustino, Feliciano

2018-03-01

We probe the accuracy limit of ab initio calculations of carrier mobilities in semiconductors, within the framework of the Boltzmann transport equation. By focusing on the paradigmatic case of silicon, we show that fully predictive calculations of electron and hole mobilities require many-body quasiparticle corrections to band structures and electron-phonon matrix elements, the inclusion of spin-orbit coupling, and an extremely fine sampling of inelastic scattering processes in momentum space. By considering all these factors we obtain excellent agreement with experiment, and we identify the band effective masses as the most critical parameters to achieve predictive accuracy. Our findings set a blueprint for future calculations of carrier mobilities, and pave the way to engineering transport properties in semiconductors by design.

Dynamics of polaritons in semiconductor microcavities near instability thresholds

International Nuclear Information System (INIS)

He, Peng-Bin

2012-01-01

A theoretical study is presented on the dynamics of polaritons in semiconductor microcavities near parametric instability thresholds. With upward or downward ramp of optical pump, different instability modes emerge in parameter space defined by damping and detuning. According to these modes, stationary short-wave, stationary periodic, oscillatory periodic, and oscillatory uniform parametric instabilities are distinguished. By multiple scale expansion, the dynamics near threshold can be described by a critical mode with a slowly varying amplitude for the last three instabilities. Furthermore, it is found that the evolutions of their amplitudes are governed by real or complex Ginzburg–Landau equations. -- Highlights: ► Phase diagrams for different instability in extended parameter space. ► Different instability modes near thresholds. ► Different envelop equations near thresholds obtained by multi-scale expansion.

Delay induced high order locking effects in semiconductor lasers

Science.gov (United States)

Kelleher, B.; Wishon, M. J.; Locquet, A.; Goulding, D.; Tykalewicz, B.; Huyet, G.; Viktorov, E. A.

2017-11-01

Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types-—a quantum dot based device and a quantum well based device—are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

Computational models for the berry phase in semiconductor quantum dots

Energy Technology Data Exchange (ETDEWEB)

Prabhakar, S., E-mail: rmelnik@wlu.ca; Melnik, R. V. N., E-mail: rmelnik@wlu.ca [M2NeT Lab, Wilfrid Laurier University, 75 University Ave W, Waterloo, ON N2L 3C5 (Canada); Sebetci, A. [Department of Mechanical Engineering, Mevlana University, 42003, Konya (Turkey)

2014-10-06

By developing a new model and its finite element implementation, we analyze the Berry phase low-dimensional semiconductor nanostructures, focusing on quantum dots (QDs). In particular, we solve the Schrödinger equation and investigate the evolution of the spin dynamics during the adiabatic transport of the QDs in the 2D plane along circular trajectory. Based on this study, we reveal that the Berry phase is highly sensitive to the Rashba and Dresselhaus spin-orbit lengths.

Femtosecond spectroscopy in semiconductors: a key to coherences, correlations and quantum kinetics

International Nuclear Information System (INIS)

Axt, V M; Kuhn, T

2004-01-01

interaction mechanisms is involved in forming new types of correlations. Examples are coupled plasmon-phonon and Bloch-phonon oscillations. The results reviewed in this paper clearly reveal the central role of many-particle correlations and coherences for the ultrafast dynamics of dense semiconductor systems. Both the presence of strong correlation effects and the formation of coherences in a genuine many-particle system have important implications for the controllability of optical signals from this class of materials, which is of utmost importance for applications in present-day and future optoelectronic devices

Electronic properties of semiconductor heterostructures

International Nuclear Information System (INIS)

Einevoll, G.T.

1991-02-01

Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

Organic semiconductor crystals.

Science.gov (United States)

Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

2018-01-22

Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

Numerical solution of plasma fluid equations using locally refined grids

International Nuclear Information System (INIS)

Colella, P.

1997-01-01

This paper describes a numerical method for the solution of plasma fluid equations on block-structured, locally refined grids. The plasma under consideration is typical of those used for the processing of semiconductors. The governing equations consist of a drift-diffusion model of the electrons and an isothermal model of the ions coupled by Poisson's equation. A discretization of the equations is given for a uniform spatial grid, and a time-split integration scheme is developed. The algorithm is then extended to accommodate locally refined grids. This extension involves the advancement of the discrete system on a hierarchy of levels, each of which represents a degree of refinement, together with synchronization steps to ensure consistency across levels. A brief discussion of a software implementation is followed by a presentation of numerical results

Compact semiconductor lasers

CERN Document Server

Yu, Siyuan; Lourtioz, Jean-Michel

2014-01-01

This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

International Nuclear Information System (INIS)

Walukiewicz, W.

1988-02-01

The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

Semiconductor spintronics

CERN Document Server

Xia, Jianbai; Chang, Kai

2012-01-01

Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

The theoretical and numerical models of the novel and fast tunable semiconductor ring laser

Science.gov (United States)

Zhu, Jiangbo; Zhang, Junwen; Chi, Nan; Yu, Siyuan

2011-01-01

Fast wavelength-tunable semiconductor lasers will be the key components in future optical packet switching networks. Especially, they are of great importance in the optical network nodes: transmitters, optical wavelength-routers, etc. In this paper, a new scheme of a next-generation fast tunable ring laser was given. Tunable lasers in this design have better wavelength tunability compared with others, for they are switched faster in wavelength and simpler to control with the injecting light from an external distributed Bragg-reflector(DBR). Then some discussion of the waveguide material system and coupler design of the ring laser were given. And we also derived the multimode rate equations corresponding to this scheme by analyzing some characteristics of the semiconductor ring cavity, directionality, nonlinear mode competition, optical injection locking, etc. We did MatLab simulation based on the new rate equations to research the process of mode competition and wavelength switching in the laser, and achieved the basic functions of a tunable laser. Finally some discussion of the impact of several key parameters was given.

Method of doping a semiconductor

International Nuclear Information System (INIS)

Yang, C.Y.; Rapp, R.A.

1983-01-01

A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

Bloch oscillations of quasispin polaritons in a magneto-optically controlled atomic ensemble

International Nuclear Information System (INIS)

Jiang, Chang; Lu, Jing; Zhou, Lan

2012-01-01

We consider the propagation of quantized polarized light in a magneto-optically-manipulated atomic ensemble with a tripod configuration. A polariton formalism is applied when the medium is subjected to a washboard magnetic field under electromagnetically-induced transparency. The dark-state polariton with multiple components is achieved. We analyze the quantum dynamics of the dark-state polariton using experimental data from the rubidium D1-line. It is found that one component propagates freely, however the wave packet trajectory of the other component performs Bloch oscillations. -- Highlights: ► We study the wave–particle dualism of quasiparticles in a magneto-optical medium. ► We generate a “spin”-component dark-state polariton. ► Magnetic fields lead to oscillation and free propagation of a dark-state polariton. ► Our approach shows the role of entanglement of degrees of freedom of photons.

Bloch oscillations of quasispin polaritons in a magneto-optically controlled atomic ensemble

Energy Technology Data Exchange (ETDEWEB)

Jiang, Chang [Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, and Department of Physics, Hunan Normal University, Changsha 410081 (China); Lu, Jing, E-mail: lujing@hunnu.edu.cn [Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, and Department of Physics, Hunan Normal University, Changsha 410081 (China); Zhou, Lan [Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, and Department of Physics, Hunan Normal University, Changsha 410081 (China)

2012-10-01

We consider the propagation of quantized polarized light in a magneto-optically-manipulated atomic ensemble with a tripod configuration. A polariton formalism is applied when the medium is subjected to a washboard magnetic field under electromagnetically-induced transparency. The dark-state polariton with multiple components is achieved. We analyze the quantum dynamics of the dark-state polariton using experimental data from the rubidium D1-line. It is found that one component propagates freely, however the wave packet trajectory of the other component performs Bloch oscillations. -- Highlights: ► We study the wave–particle dualism of quasiparticles in a magneto-optical medium. ► We generate a “spin”-component dark-state polariton. ► Magnetic fields lead to oscillation and free propagation of a dark-state polariton. ► Our approach shows the role of entanglement of degrees of freedom of photons.

Bloch surface waves confined in one dimension with a single polymeric nanofibre

Science.gov (United States)

Wang, Ruxue; Xia, Hongyan; Zhang, Douguo; Chen, Junxue; Zhu, Liangfu; Wang, Yong; Yang, Erchan; Zang, Tianyang; Wen, Xiaolei; Zou, Gang; Wang, Pei; Ming, Hai; Badugu, Ramachandram; Lakowicz, Joseph R.

2017-02-01

Polymeric fibres with small radii (such as ≤125 nm) are delicate to handle and should be laid down on a solid substrate to obtain practical devices. However, placing these nanofibres on commonly used glass substrates prevents them from guiding light. In this study, we numerically and experimentally demonstrate that when the nanofibre is placed on a suitable dielectric multilayer, it supports a guided mode, a Bloch surface wave (BSW) confined in one dimension. The physical origin of this new mode is discussed in comparison with the typical two-dimensional BSW mode. Polymeric nanofibres are easily fabricated to contain fluorophores, which make the dielectric nanofibre and multilayer configuration suitable for developing a large range of new nanometric scale devices, such as processor-memory interconnections, devices with sensitivity to target analytes, incident polarization and multi-colour BSW modes.

Bloch surface wave structures for high sensitivity detection and compact waveguiding

Science.gov (United States)

Khan, Muhammad Umar; Corbett, Brian

2016-01-01

Resonant propagating waves created on the surface of a dielectric multilayer stack, called Bloch surface waves (BSW), can be designed for high sensitivity monitoring of the adjacent refractive index as an alternative platform to the metal-based surface plasmon resonance (SPR) sensing. The resonant wavelength and polarization can be designed by engineering of the dielectric layers unlike the fixed resonance of SPR, while the wide bandwidth low loss of dielectrics permits sharper resonances, longer propagation lengths and thus their use in waveguiding devices. The transparency of the dielectrics allows the excitation and monitoring of surface-bound fluorescent molecules. We review the recent developments in this technology. We show the advantages that can be obtained by using high index contrast layered structures. Operating at 1550 nm wavelengths will allow the BSW sensors to be implemented in the silicon photonics platform where active waveguiding can be used in the realization of compact planar integrated circuits for multi-parameter sensing.

THE ACTION OF CORAGEN INSECTICIDE ON CERTAIN PHYSIOLOGICAL BIOMARKERS ON CARASSIUS AURATUS GIBELIO BLOCH L. 1758

Directory of Open Access Journals (Sweden)

Claudiu Alexandru Baciu

2015-12-01

Full Text Available In our researches we have determined the variation of certain physiological indexes, such as the oxygen consume, the breathing rhythm, the glycaemia and the number of red blood cells under the action of Coragen insecticide on Carassius auratus gibelio Bloch. Under the action of Coragen, we have registered significant changes in the oxygen consume, the breathing rhythm, the number of red blood cells and glycemia at the Carassius auratus gibelio Bloch items, considered as answers to the stress provoked by emissions. The highest variations of the physiological indexes, from the perspective of the percentage, were noticed at the glycemia, which at the mark was 28 mg/dl, and in the treated sample, with 0.1 ml/l Coragen is 42 mg/dl, representing a 50% growth and at the breathing rhythm in 24 hours, where values significantly decreased with 41.18% at the concentration of 0.07 ml/l and with 39.33% at the concentrations of 0.05 and 0.1 ml/l Coragen. The slightest variations of the physiological indexes, from the perspective of percentage, were noticed at the oxygen consumption, which, at the mark is of 55.302 ml oxygen/kg/hour, and for the treated sample, with 0.1 ml/l Coragen is 34.81 ml oxygen/kg/hour, representing a decrease of 37.06% in 24 hours and the number of red blood cells, where the values have significantly decrease with 9.58%, 13.48%, respectively 18.44% for the concentrations of 0.05, 0.07 and 0.1 ml/l Coragen.

Bloch oscillations of ultracold atoms and measurement of the fine structure constant; Oscillations de Bloch d'atomes ultrafroids et mesure de la constante de structure fine

Energy Technology Data Exchange (ETDEWEB)

Clade, P

2005-10-15

From a measurement of the recoil velocity of an atom absorbing a photon, it is possible to deduce a determination of the ratio h/m between the Planck constant and the mass of the atoms and then to deduce a value of the fine structure constant alpha. To do this measurement, we use the technique of Bloch oscillations, which allows us to transfer a large number of recoils to atoms. A velocity sensor, based on velocity selective Raman transition, enables us to measure the momentum transferred to the atoms. A measurement with a statistical uncertainty of 4.4 10{sup -9}, in conjunction with a careful study of systematic effects (5 10{sup -9}), has led us to a determination of alpha with an uncertainty of 6.7 10{sup -9}: {alpha}{sup -1}(Rb) = 137.03599878 (91). This uncertainty is similar to the uncertainty of the best determinations of alpha based on atom interferometry. (author)

The child-Langmuir limit for semiconductors: a numerical validation

International Nuclear Information System (INIS)

Caceres, M.J.; Carrillo, J.A.; Degond, P.

2002-01-01

The Boltzmann-Poisson system modeling the electron flow in semiconductors is used to discuss the validity of the Child-Langmuir asymptotics. The scattering kernel is approximated by a simple relaxation time operator. The Child-Langmuir limit gives an approximation of the current-voltage characteristic curves by means of a scaling procedure in which the ballistic velocity is much larger that the thermal one. We discuss the validity of the Child-Langmuir regime by performing detailed numerical comparisons between the simulation of the Boltzmann-Poisson system and the Child-Langmuir equations in test problems. (authors)

High-frequency homogenization for travelling waves in periodic media.

Science.gov (United States)

Harutyunyan, Davit; Milton, Graeme W; Craster, Richard V

2016-07-01

We consider high-frequency homogenization in periodic media for travelling waves of several different equations: the wave equation for scalar-valued waves such as acoustics; the wave equation for vector-valued waves such as electromagnetism and elasticity; and a system that encompasses the Schrödinger equation. This homogenization applies when the wavelength is of the order of the size of the medium periodicity cell. The travelling wave is assumed to be the sum of two waves: a modulated Bloch carrier wave having crystal wavevector [Formula: see text] and frequency ω 1 plus a modulated Bloch carrier wave having crystal wavevector [Formula: see text] and frequency ω 2 . We derive effective equations for the modulating functions, and then prove that there is no coupling in the effective equations between the two different waves both in the scalar and the system cases. To be precise, we prove that there is no coupling unless ω 1 = ω 2 and [Formula: see text] where Λ =(λ 1 λ 2 …λ d ) is the periodicity cell of the medium and for any two vectors [Formula: see text] the product a ⊙ b is defined to be the vector ( a 1 b 1 , a 2 b 2 ,…, a d b d ). This last condition forces the carrier waves to be equivalent Bloch waves meaning that the coupling constants in the system of effective equations vanish. We use two-scale analysis and some new weak-convergence type lemmas. The analysis is not at the same level of rigour as that of Allaire and co-workers who use two-scale convergence theory to treat the problem, but has the advantage of simplicity which will allow it to be easily extended to the case where there is degeneracy of the Bloch eigenvalue.

Y spaces and global smooth solution of fractional Navier-Stokes equations with initial value in the critical oscillation spaces

Science.gov (United States)

Yang, Qixiang; Yang, Haibo

2018-04-01

For fractional Navier-Stokes equations and critical initial spaces X, one used to establish the well-posedness in the solution space which is contained in C (R+ , X). In this paper, for heat flow, we apply parameter Meyer wavelets to introduce Y spaces Y m , β where Y m , β is not contained in C (R+, B˙∞ 1 - 2 β , ∞). Consequently, for 1/2 global well-posedness of fractional Navier-Stokes equations with small initial data in all the critical oscillation spaces. The critical oscillation spaces may be any Besov-Morrey spaces (B˙p,q γ1 ,γ2 (Rn)) n or any Triebel-Lizorkin-Morrey spaces (F˙p,q γ1 ,γ2 (Rn)) n where 1 ≤ p , q ≤ ∞ , 0 ≤γ2 ≤ n/p, γ1 -γ2 = 1 - 2 β. These critical spaces include many known spaces. For example, Besov spaces, Sobolev spaces, Bloch spaces, Q-spaces, Morrey spaces and Triebel-Lizorkin spaces etc.

Semiconductor lasers stability, instability and chaos

CERN Document Server

Ohtsubo, Junji

2017-01-01

This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

Terahertz semiconductor nonlinear optics

DEFF Research Database (Denmark)

Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

2013-01-01

In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

Defects in semiconductors

CERN Document Server

Romano, Lucia; Jagadish, Chennupati

2015-01-01

This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

Selective, electrochemical etching of a semiconductor

Science.gov (United States)

Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

2018-03-20

Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

Stationary Shock Waves with Oscillating Front in Dislocation Systems of Semiconductors

Science.gov (United States)

Gestrin, S. G.; Shchukina, E. V.

2018-05-01

The paper presents a study of weakly nonlinear wave processes in the cylindrical region of a hole gas surrounding a negatively charged dislocation in an n-type semiconductor crystal. It is shown that shock waves propagating along the dislocation are the solutions of the Korteweg-de Vries-Burgers equation when the dispersion and dissipation of medium are taken into account. Estimates are obtained for the basic physical parameters characterizing the shock wave and the region inside the Reed cylinder.

Analysis of fluctuations in semiconductor devices

Science.gov (United States)

Andrei, Petru

The random nature of ion implantation and diffusion processes as well as inevitable tolerances in fabrication result in random fluctuations of doping concentrations and oxide thickness in semiconductor devices. These fluctuations are especially pronounced in ultrasmall (nanoscale) semiconductor devices when the spatial scale of doping and oxide thickness variations become comparable with the geometric dimensions of devices. In the dissertation, the effects of these fluctuations on device characteristics are analyzed by using a new technique for the analysis of random doping and oxide thickness induced fluctuations. This technique is universal in nature in the sense that it is applicable to any transport model (drift-diffusion, semiclassical transport, quantum transport etc.) and it can be naturally extended to take into account random fluctuations of the oxide (trapped) charges and channel length. The technique is based on linearization of the transport equations with respect to the fluctuating quantities. It is computationally much (a few orders of magnitude) more efficient than the traditional Monte-Carlo approach and it yields information on the sensitivity of fluctuations of parameters of interest (e.g. threshold voltage, small-signal parameters, cut-off frequencies, etc.) to the locations of doping and oxide thickness fluctuations. For this reason, it can be very instrumental in the design of fluctuation-resistant structures of semiconductor devices. Quantum mechanical effects are taken into account by using the density-gradient model as well as through self-consistent Poisson-Schrodinger computations. Special attention is paid to the presenting of the technique in a form that is suitable for implementation on commercial device simulators. The numerical implementation of the technique is discussed in detail and numerous computational results are presented and compared with those previously published in literature.

Electronic structure of semiconductor interfaces

Energy Technology Data Exchange (ETDEWEB)

Herman, F

1983-02-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

Electronic structure of semiconductor interfaces

International Nuclear Information System (INIS)

Herman, F.

1983-01-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

Laser Rate Equation Based Filtering for Carrier Recovery in Characterization and Communication

DEFF Research Database (Denmark)

Piels, Molly; Iglesias Olmedo, Miguel; Xue, Weiqi

2015-01-01

We formulate a semiconductor laser rate equationbased approach to carrier recovery in a Bayesian filtering framework. Filter stability and the effect of model inaccuracies (unknown or un-useable rate equation coefficients) are discussed. Two potential application areas are explored: laser...... characterization and carrier recovery in coherent communication. Two rate equation based Bayesian filters, the particle filter and extended Kalman filter, are used in conjunction with a coherent receiver to measure frequency noise spectrum of a photonic crystal cavity laser with less than 20 nW of fiber...

Physical principles of semiconductor detectors

International Nuclear Information System (INIS)

Micek, S.L.

1979-01-01

The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

Semiconductors data handbook

CERN Document Server

Madelung, Otfried

2004-01-01

This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

Web-based description of the space radiation environment using the Bethe-Bloch model

Science.gov (United States)

Cazzola, Emanuele; Calders, Stijn; Lapenta, Giovanni

2016-01-01

Space weather is a rapidly growing area of research not only in scientific and engineering applications but also in physics education and in the interest of the public. We focus especially on space radiation and its impact on space exploration. The topic is highly interdisciplinary, bringing together fundamental concepts of nuclear physics with aspects of radiation protection and space science. We give a new approach to presenting the topic by developing a web-based application that combines some of the fundamental concepts from these two fields into a single tool that can be used in the context of advanced secondary or undergraduate university education. We present DREADCode, an outreach or teaching tool to rapidly assess the current conditions of the radiation field in space. DREADCode uses the available data feeds from a number of ongoing space missions (ACE, GOES-13, GOES-15) to produce a first order approximation of the radiation dose an astronaut would receive during a mission of exploration in deep space (i.e. far from the Earth’s shielding magnetic field and from the radiation belts). DREADCode is based on an easy-to-use GUI interface available online from the European Space Weather Portal (www.spaceweather.eu/dreadcode). The core of the radiation transport computation to produce the radiation dose from the observed fluence of radiation observed by the spacecraft fleet considered is based on a relatively simple approximation: the Bethe-Bloch equation. DREADCode also assumes a simplified geometry and material configuration for the shields used to compute the dose. The approach is approximate and sacrifices some important physics on the altar of rapid execution time, which allows a real-time operation scenario. There is no intention here to produce an operational tool for use in space science and engineering. Rather, we present an educational tool at undergraduate level that uses modern web-based and programming methods to learn some of the most important

Web-based description of the space radiation environment using the Bethe–Bloch model

International Nuclear Information System (INIS)

Cazzola, Emanuele; Lapenta, Giovanni; Calders, Stijn

2016-01-01

Space weather is a rapidly growing area of research not only in scientific and engineering applications but also in physics education and in the interest of the public. We focus especially on space radiation and its impact on space exploration. The topic is highly interdisciplinary, bringing together fundamental concepts of nuclear physics with aspects of radiation protection and space science. We give a new approach to presenting the topic by developing a web-based application that combines some of the fundamental concepts from these two fields into a single tool that can be used in the context of advanced secondary or undergraduate university education. We present DREADCode, an outreach or teaching tool to rapidly assess the current conditions of the radiation field in space. DREADCode uses the available data feeds from a number of ongoing space missions (ACE, GOES-13, GOES-15) to produce a first order approximation of the radiation dose an astronaut would receive during a mission of exploration in deep space (i.e. far from the Earth’s shielding magnetic field and from the radiation belts). DREADCode is based on an easy-to-use GUI interface available online from the European Space Weather Portal (www.spaceweather.eu/dreadcode). The core of the radiation transport computation to produce the radiation dose from the observed fluence of radiation observed by the spacecraft fleet considered is based on a relatively simple approximation: the Bethe–Bloch equation. DREADCode also assumes a simplified geometry and material configuration for the shields used to compute the dose. The approach is approximate and sacrifices some important physics on the altar of rapid execution time, which allows a real-time operation scenario. There is no intention here to produce an operational tool for use in space science and engineering. Rather, we present an educational tool at undergraduate level that uses modern web-based and programming methods to learn some of the most

Illuminating "spin-polarized" Bloch wave-function projection from degenerate bands in decomposable centrosymmetric lattices

Science.gov (United States)

Li, Pengke; Appelbaum, Ian

2018-03-01

The combination of space inversion and time-reversal symmetries results in doubly degenerate Bloch states with opposite spin. Many lattices with these symmetries can be constructed by combining a noncentrosymmetric potential (lacking this degeneracy) with its inverted copy. Using simple models, we unravel the evolution of local spin splitting during this process of inversion symmetry restoration, in the presence of spin-orbit interaction and sublattice coupling. Importantly, through an analysis of quantum mechanical commutativity, we examine the difficulty of identifying states that are simultaneously spatially segregated and spin polarized. We also explain how surface-sensitive experimental probes (such as angle-resolved photoemission spectroscopy, or ARPES) of "hidden spin polarization" in layered materials are susceptible to unrelated spin splitting intrinsically induced by broken inversion symmetry at the surface.

Compound Semiconductor Radiation Detectors

CERN Document Server

Owens, Alan

2012-01-01

Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

Optical orientation in ferromagnet/semiconductor hybrids

International Nuclear Information System (INIS)

Korenev, V L

2008-01-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

Optical orientation in ferromagnet/semiconductor hybrids

Science.gov (United States)

Korenev, V. L.

2008-11-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

Optical Orientation in Ferromagnet/Semiconductor Hybrids

OpenAIRE

Korenev, V. L.

2008-01-01

The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

EDITORIAL The 23rd Nordic Semiconductor Meeting The 23rd Nordic Semiconductor Meeting

Science.gov (United States)

Ólafsson, Sveinn; Sveinbjörnsson, Einar

2010-12-01

A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a topical issue of Physica Scripta. All of the papers in this topical issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This meeting of the 23rd Nordic Semiconductor community, NSM 2009, was held at Háskólatorg at the campus of the University of Iceland, Reykjavik, Iceland, 14-17 June 2009. Support was provided by the University of Iceland. Almost 50 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The meeting aim was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. Topics Theory and fundamental physics of semiconductors Emerging semiconductor technologies (for example III-V integration on Si, novel Si devices, graphene) Energy and semiconductors Optical phenomena and optical devices MEMS and sensors Program 14 June Registration 13:00-17:00 15 June Meeting program 09:30-17:00 and Poster Session I 16 June Meeting program 09:30-17:00 and Poster Session II 17 June Excursion and dinner

Defects in semiconductors

International Nuclear Information System (INIS)

Pimentel, C.A.F.

1983-01-01

Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions.

Science.gov (United States)

Tang, Janika; Thakore, Vaibhav; Ala-Nissila, Tapio

2017-07-18

Increased reflectance from the inclusion of highly scattering particles at low volume fractions in an insulating dielectric offers a promising way to reduce radiative thermal losses at high temperatures. Here, we investigate plasmonic resonance driven enhanced scattering from microinclusions of low-bandgap semiconductors (InP, Si, Ge, PbS, InAs and Te) in an insulating composite to tailor its infrared reflectance for minimizing thermal losses from radiative transfer. To this end, we compute the spectral properties of the microcomposites using Monte Carlo modeling and compare them with results from Fresnel equations. The role of particle size-dependent Mie scattering and absorption efficiencies, and, scattering anisotropy are studied to identify the optimal microinclusion size and material parameters for maximizing the reflectance of the thermal radiation. For composites with Si and Ge microinclusions we obtain reflectance efficiencies of 57-65% for the incident blackbody radiation from sources at temperatures in the range 400-1600 °C. Furthermore, we observe a broadbanding of the reflectance spectra from the plasmonic resonances due to charge carriers generated from defect states within the semiconductor bandgap. Our results thus open up the possibility of developing efficient high-temperature thermal insulators through use of the low-bandgap semiconductor microinclusions in insulating dielectrics.

Semiconductor Laser Measurements Laboratory

Data.gov (United States)

Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

Metal semiconductor contacts and devices

CERN Document Server

Cohen, Simon S; Einspruch, Norman G

1986-01-01

VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

Handbook of luminescent semiconductor materials

CERN Document Server

Bergman, Leah

2011-01-01

Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

Reducing leakage current in semiconductor devices

Energy Technology Data Exchange (ETDEWEB)

Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

2018-03-06

A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

Semiconductor device comprising a pn-heterojunction

NARCIS (Netherlands)

2007-01-01

An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

Semirelativity in semiconductors: a review.

Science.gov (United States)

Zawadzki, Wlodek

2017-09-20

An analogy between behavior of electrons in narrow-gap semiconductors (NGS) and relativistic electrons in vacuum is reviewed. Energy band structures [Formula: see text] are considered for various NGS materials and their correspondence to the energy-momentum relation in special relativity is emphasized. It is indicated that special relativity for vacuum is analogous to a two-band [Formula: see text] description for NGS. The maximum electron velocity in NGS is [Formula: see text], which corresponds to the light velocity in vacuum. An effective mass of charge carriers in semiconductors is introduced, relating their velocity to quasimomentum and it is shown that this mass depends on electron energy (or velocity) in a way similar to the mass of free relativistic electrons. In [Formula: see text] alloys one can reach vanishing energy gap at which electrons and light holes become three-dimensional massless Dirac fermions. A wavelength [Formula: see text] is defined for NGS, in analogy to the Compton wavelength in relativistic quantum mechanics. It is estimated that [Formula: see text] is on the order of tens of Angstroms in typical semiconducting materials which is experimentally confirmed in tunneling experiments on energy dispersion in the forbidden gap. Statistical properties of the electron gas in NGS are calculated and their similarity is demonstrated to those of the Juttner gas of relativistic particles. Interband electron tunneling in NGS is described and shown to be in close analogy to the predicted but unobserved tunneling between negative and positive energies resulting from the Dirac equation for free electrons. It is demonstrated that the relativistic analogy holds for orbital and spin properties of electrons in the presence of an external magnetic field. In particular, it is shown that the spin magnetic moment of both NGS electrons and relativistic electrons approaches zero with increasing energy. This conclusion is confirmed experimentally for NGS. Electrons

Semirelativity in semiconductors: a review

Science.gov (United States)

Zawadzki, Wlodek

2017-09-01

An analogy between behavior of electrons in narrow-gap semiconductors (NGS) and relativistic electrons in vacuum is reviewed. Energy band structures \\varepsilon ≤ft(\\mathbf{k}\\right) are considered for various NGS materials and their correspondence to the energy-momentum relation in special relativity is emphasized. It is indicated that special relativity for vacuum is analogous to a two-band \\mathbf{k}\\centerdot \\mathbf{p} description for NGS. The maximum electron velocity in NGS is u≃ 1× {{10}8}~\\text{cm}~{{\\text{s}}-1} , which corresponds to the light velocity in vacuum. An effective mass of charge carriers in semiconductors is introduced, relating their velocity to quasimomentum and it is shown that this mass depends on electron energy (or velocity) in a way similar to the mass of free relativistic electrons. In \\text{H}{{\\text{g}}1-x}\\text{C}{{\\text{d}}x}\\text{Te} alloys one can reach vanishing energy gap at which electrons and light holes become three-dimensional massless Dirac fermions. A wavelength {λz} is defined for NGS, in analogy to the Compton wavelength in relativistic quantum mechanics. It is estimated that {λz} is on the order of tens of Angstroms in typical semiconducting materials which is experimentally confirmed in tunneling experiments on energy dispersion in the forbidden gap. Statistical properties of the electron gas in NGS are calculated and their similarity is demonstrated to those of the Juttner gas of relativistic particles. Interband electron tunneling in NGS is described and shown to be in close analogy to the predicted but unobserved tunneling between negative and positive energies resulting from the Dirac equation for free electrons. It is demonstrated that the relativistic analogy holds for orbital and spin properties of electrons in the presence of an external magnetic field. In particular, it is shown that the spin magnetic moment of both NGS electrons and relativistic electrons approaches zero with increasing

Magnetoresistance in organic semiconductors: Including pair correlations in the kinetic equations for hopping transport

Science.gov (United States)

Shumilin, A. V.; Kabanov, V. V.; Dediu, V. I.

2018-03-01

We derive kinetic equations for polaron hopping in organic materials that explicitly take into account the double occupation possibility and pair intersite correlations. The equations include simplified phenomenological spin dynamics and provide a self-consistent framework for the description of the bipolaron mechanism of the organic magnetoresistance. At low applied voltages, the equations can be reduced to those for an effective resistor network that generalizes the Miller-Abrahams network and includes the effect of spin relaxation on the system resistivity. Our theory discloses the close relationship between the organic magnetoresistance and the intersite correlations. Moreover, in the absence of correlations, as in an ordered system with zero Hubbard energy, the magnetoresistance vanishes.

Microscopic description of exciton polaritons in direct two-band semiconductors

Science.gov (United States)

Nguyen, Van Trong; Mahler, Günter

1999-07-01

Based on a quantum electrodynamical formulation, a microscopic description of exciton polaritons in a two-band semiconductor is presented. We show that the interband exchange Coulomb interaction, responsible for the coupling of the exciton with the longitudinal part of the induced field, should be treated on equal footing together with the coupling to the transverse part of the induced field (the photon field). The constitutive relation is established to connect the current density with the total electric field of polaritons. The classical Maxwell equations are derived from the quantum representation of photons to get a closed system of equations. The temporal evolution for an initial excited exciton state is studied in detail and an anisotropic polariton vacuum Rabi splitting is shown to occur. A number of up-to-now unresolved discrepancies in the literature are clarified.

Asymmetric rogue waves, breather-to-soliton conversion, and nonlinear wave interactions in the Hirota–Maxwell–Bloch system

International Nuclear Information System (INIS)

Wang Lei; Zhu Yujie; Wang Ziqi; Xu Tao; Qi Fenghua; Xue Yushan

2016-01-01

We study the nonlinear localized waves on constant backgrounds of the Hirota–Maxwell–Bloch (HMB) system arising from the erbium doped fibers. We derive the asymmetric breather, rogue wave (RW) and semirational solutions of the HMB system. We show that the breather and RW solutions can be converted into various soliton solutions. Under different conditions of parameters, we calculate the locus of the eigenvalues on the complex plane which converts the breathers or RWs into solitons. Based on the second-order solutions, we investigate the interactions among different types of nonlinear waves including the breathers, RWs and solitons. (author)

Asymmetric Rogue Waves, Breather-to-Soliton Conversion, and Nonlinear Wave Interactions in the Hirota-Maxwell-Bloch System

Science.gov (United States)

Wang, Lei; Zhu, Yu-Jie; Wang, Zi-Qi; Xu, Tao; Qi, Feng-Hua; Xue, Yu-Shan

2016-02-01

We study the nonlinear localized waves on constant backgrounds of the Hirota-Maxwell-Bloch (HMB) system arising from the erbium doped fibers. We derive the asymmetric breather, rogue wave (RW) and semirational solutions of the HMB system. We show that the breather and RW solutions can be converted into various soliton solutions. Under different conditions of parameters, we calculate the locus of the eigenvalues on the complex plane which converts the breathers or RWs into solitons. Based on the second-order solutions, we investigate the interactions among different types of nonlinear waves including the breathers, RWs and solitons.

Emergence of quasiparticle Bloch states in artificial crystals crafted atom-by-atom

Directory of Open Access Journals (Sweden)

Jan Girovsky, Jose L. Lado, Floris E. Kalff, Eleonora Fahrenfort, Lucas J. J. M. Peters, Joaquín Fernández-Rossier, Alexander F. Otte

2017-06-01

Full Text Available The interaction of electrons with a periodic potential of atoms in crystalline solids gives rise to band structure. The band structure of existing materials can be measured by photoemission spectroscopy and accurately understood in terms of the tight-binding model, however not many experimental approaches exist that allow to tailor artificial crystal lattices using a bottom-up approach. The ability to engineer and study atomically crafted designer materials by scanning tunnelling microscopy and spectroscopy (STM/STS helps to understand the emergence of material properties. Here, we use atom manipulation of individual vacancies in a chlorine monolayer on Cu(100 to construct one- and two-dimensional structures of various densities and sizes. Local STS measurements reveal the emergence of quasiparticle bands, evidenced by standing Bloch waves, with tuneable dispersion. The experimental data are understood in terms of a tight-binding model combined with an additional broadening term that allows an estimation of the coupling to the underlying substrate.

Bloch oscillations of ultracold atoms and measurement of the fine structure constant

International Nuclear Information System (INIS)

Clade, P.

2005-10-01

From a measurement of the recoil velocity of an atom absorbing a photon, it is possible to deduce a determination of the ratio h/m between the Planck constant and the mass of the atoms and then to deduce a value of the fine structure constant alpha. To do this measurement, we use the technique of Bloch oscillations, which allows us to transfer a large number of recoils to atoms. A velocity sensor, based on velocity selective Raman transition, enables us to measure the momentum transferred to the atoms. A measurement with a statistical uncertainty of 4.4 10 -9 , in conjunction with a careful study of systematic effects (5 10 -9 ), has led us to a determination of alpha with an uncertainty of 6.7 10 -9 : α -1 (Rb) = 137.03599878 (91). This uncertainty is similar to the uncertainty of the best determinations of alpha based on atom interferometry. (author)

Corrections to Newton’s law of gravitation - application to hybrid Bloch brane

Science.gov (United States)

Almeida, C. A. S.; Veras, D. F. S.; Dantas, D. M.

2018-02-01

We present in this work, the calculations of corrections in the Newton’s law of gravitation due to Kaluza-Klein gravitons in five-dimensional warped thick braneworld scenarios. We consider here a recently proposed model, namely, the hybrid Bloch brane. This model couples two scalar fields to gravity and is engendered from a domain wall-like defect. Also, two other models the so-called asymmetric hybrid brane and compact brane are considered. Such models are deformations of the ϕ 4 and sine-Gordon topological defects, respectively. Therefore we consider the branes engendered by such defects and we also compute the corrections in their cases. In order to attain the mass spectrum and its corresponding eigenfunctions which are the essential quantities for computing the correction to the Newtonian potential, we develop a suitable numerical technique. The calculation of slight deviations in the gravitational potential may be used as a selection tool for braneworld scenarios matching with future experimental measurements in high energy collisions

Depletion field focusing in semiconductors

NARCIS (Netherlands)

Prins, M.W.J.; Gelder, Van A.P.

1996-01-01

We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

Performance analysis of Arithmetic Mean method in determining peak junction temperature of semiconductor device

Directory of Open Access Journals (Sweden)

Mohana Sundaram Muthuvalu

2015-12-01

Full Text Available High reliability users of microelectronic devices have been derating junction temperature and other critical stress parameters to improve device reliability and extend operating life. The reliability of a semiconductor is determined by junction temperature. This paper gives a useful analysis on mathematical approach which can be implemented to predict temperature of a silicon die. The problem could be modeled as heat conduction equation. In this study, numerical approach based on implicit scheme and Arithmetic Mean (AM iterative method will be applied to solve the governing heat conduction equation. Numerical results are also included in order to assert the effectiveness of the proposed technique.

Quantum features of semiconductor quantum dots

International Nuclear Information System (INIS)

Lozada-Cassou, M.; Dong Shihai; Yu Jiang

2004-01-01

The exact solutions of the two-dimensional Schrodinger equation with the position-dependent mass for the square well potential in the semiconductor quantum dots system are obtained. The eigenvalues, which are closely related to the position-dependent masses μ1 and μ2, the potential well depth V0 and the radius of the quantum dots r0, can be calculated from two boundary conditions. We generalize this quantum system to three-dimensional case. The special cases for the angular momentum quantum number l=0, 1, 2 are studied in some detail. We find that the energy levels are proportional to the parameters μ2, V0 and r0 for l=0. The relations between them for l=1, 2 become very complicated. The scattering states of this quantum system are mentioned briefly

Application of kinetic flux vector splitting scheme for solving multi-dimensional hydrodynamical models of semiconductor devices

Science.gov (United States)

Nisar, Ubaid Ahmed; Ashraf, Waqas; Qamar, Shamsul

In this article, one and two-dimensional hydrodynamical models of semiconductor devices are numerically investigated. The models treat the propagation of electrons in a semiconductor device as the flow of a charged compressible fluid. It plays an important role in predicting the behavior of electron flow in semiconductor devices. Mathematically, the governing equations form a convection-diffusion type system with a right hand side describing the relaxation effects and interaction with a self consistent electric field. The proposed numerical scheme is a splitting scheme based on the kinetic flux-vector splitting (KFVS) method for the hyperbolic step, and a semi-implicit Runge-Kutta method for the relaxation step. The KFVS method is based on the direct splitting of macroscopic flux functions of the system on the cell interfaces. The second order accuracy of the scheme is achieved by using MUSCL-type initial reconstruction and Runge-Kutta time stepping method. Several case studies are considered. For validation, the results of current scheme are compared with those obtained from the splitting scheme based on the NT central scheme. The effects of various parameters such as low field mobility, device length, lattice temperature and voltage are analyzed. The accuracy, efficiency and simplicity of the proposed KFVS scheme validates its generic applicability to the given model equations. A two dimensional simulation is also performed by KFVS method for a MESFET device, producing results in good agreement with those obtained by NT-central scheme.

Multiple trapping on a comb structure as a model of electron transport in disordered nanostructured semiconductors

International Nuclear Information System (INIS)

Sibatov, R. T.; Morozova, E. V.

2015-01-01

A model of dispersive transport in disordered nanostructured semiconductors has been proposed taking into account the percolation structure of a sample and joint action of several mechanisms. Topological and energy disorders have been simultaneously taken into account within the multiple trapping model on a comb structure modeling the percolation character of trajectories. The joint action of several mechanisms has been described within random walks with a mixture of waiting time distributions. Integral transport equations with fractional derivatives have been obtained for an arbitrary density of localized states. The kinetics of the transient current has been calculated within the proposed new model in order to analyze time-of-flight experiments for nanostructured semiconductors

Application of multicomponent diffusion theory for description of impurities distribution in complex diffusive doping of semiconductors

International Nuclear Information System (INIS)

Uskov, V.A.; Kondrachenko, O.E.; Kondrachenko, L.A.

1977-01-01

A phenomenological theory of multicomponent diffusion involving interaction between the components is employed to analyze how the interaction between two admixtures affects their simultaneous or consequent diffusion into a semiconductor. The theory uses the equations of multicomponent dissusion under common conditions (constant diffusion coefficients and equilibrium distribution of vacancies). The experiments are described on In and Sb simultaneous diffusion into Ge. The diffusion is performed according to the routine gas phase technology with the use of radioactive isotopes In 114 and Sb 124 . It is shown that the introduction of an additional diffusion coefficient D 12 makes it possible to simply and precisely describe the distribution of interacting admixtures in complex diffusion alloying of semiconductors

Semiconductor structure and recess formation etch technique

Energy Technology Data Exchange (ETDEWEB)

Lu, Bin; Sun, Min; Palacios, Tomas Apostol

2017-02-14

A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

Electrodes for Semiconductor Gas Sensors

Science.gov (United States)

Lee, Sung Pil

2017-01-01

The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

Coupled force-balance and particle-occupation rate equations for high-field electron transport

International Nuclear Information System (INIS)

Lei, X. L.

2008-01-01

It is pointed out that in the framework of balance-equation approach, the coupled force-balance and particle-occupation rate equations can be used as a complete set of equations to determine the high-field transport of semiconductors in both strong and weak electron-electron interaction limits. We call to attention that the occupation rate equation conserves the total particle number and maintains the energy balance of the relative electron system, and there is no need to introduce any other term in it. The addition of an energy-drift term in the particle-occupation rate equation [Phys. Rev. B 71, 195205 (2005)] is physically inadequate for the violation of the total particle-number conservation and the energy balance. It may lead to a substantial unphysical increase of the total particle number by the application of a dc electric field

Nonlinear optical effects in pure and N-doped semiconductors

International Nuclear Information System (INIS)

Donlagic, N.S.

2000-01-01

Over the last decades, the nonlinear optical properties of condensed matter systems have been an attractive and fruitful field of research. While the linear response functions of solids provide information about the elementary excitations of the systems, nonlinear optical experiments give insight into the dynamics of the fundamental many-body processes which are initiated by the external excitations. Stimulated by the experimental results, new theoretical concepts and methods have been developed in order to relate the observed phenomena to the microscopic properties of the investigated materials. The present work deals with the study of the nonlinear dynamics of the optical interband polarization in pure and n-doped semiconductors.In the first part of the thesis, the relaxation behavior of optically excited electron-hole pairs in a one-dimensional semiconductor, which are coupled to longitudinal optical phonons with an initial lattice temperature T>0, is studied with the help of quantum kinetic equations. Apart from Hartree-Fock-like Coulomb contributions, these equations contain additional Coulomb terms, the so-called vertex corrections, by which the influence of the electron-electron interaction on the electron-phonon scattering processes is taken into account. The numerical studies indicate that the vertex corrections are essential for a correct description of the excitonic dynamics.In the second part of the thesis, the attention is shifted to the characteristics of the optical response of a one-dimensional n-doped two-band semiconductor whose conduction band has been linearized with respect to the two Fermi points. Due to the linearization it is possible to calculate the linear and nonlinear response functions of the interacting electron system exactly. These response functions are then used in order to determine the linear absorption spectrum and the time-integrated signal of a degenerated four-wave-mixing experiment. It is shown that the well-known features

Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

Science.gov (United States)

Freeman, Jon C.

2003-01-01

Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

Dark and bright solitons for the two-dimensional complex modified Korteweg-de Vries and Maxwell-Bloch system with time-dependent coefficient

Science.gov (United States)

Shaikhova, G.; Ozat, N.; Yesmakhanova, K.; Bekova, G.

2018-02-01

In this work, we present Lax pair for two-dimensional complex modified Korteweg-de Vries and Maxwell-Bloch (cmKdV-MB) system with the time-dependent coefficient. Dark and bright soliton solutions for the cmKdV-MB system with variable coefficient are received by Darboux transformation. Moreover, the determinant representation of the one-fold and two-fold Darboux transformation for the cmKdV-MB system with time-dependent coefficient is presented.

Semiconductor Quantum Electron Wave Transport, Diffraction, and Interference: Analysis, Device, and Measurement.

Science.gov (United States)

Henderson, Gregory Newell

Semiconductor device dimensions are rapidly approaching a fundamental limit where drift-diffusion equations and the depletion approximation are no longer valid. In this regime, quantum effects can dominate device response. To increase further device density and speed, new devices must be designed that use these phenomena to positive advantage. In addition, quantum effects provide opportunities for a new class of devices which can perform functions previously unattainable with "conventional" semiconductor devices. This thesis has described research in the analysis of electron wave effects in semiconductors and the development of methods for the design, fabrication, and characterization of quantum devices based on these effects. First, an exact set of quantitative analogies are presented which allow the use of well understood optical design and analysis tools for the development of electron wave semiconductor devices. Motivated by these analogies, methods are presented for modeling electron wave grating diffraction using both an exact rigorous coupled-wave analysis and approximate analyses which are useful for grating design. Example electron wave grating switch and multiplexer designs are presented. In analogy to thin-film optics, the design and analysis of electron wave Fabry-Perot interference filters are also discussed. An innovative technique has been developed for testing these (and other) electron wave structures using Ballistic Electron Emission Microscopy (BEEM). This technique uses a liquid-helium temperature scanning tunneling microscope (STM) to perform spectroscopy of the electron transmittance as a function of electron energy. Experimental results show that BEEM can resolve even weak quantum effects, such as the reflectivity of a single interface between materials. Finally, methods are discussed for incorporating asymmetric electron wave Fabry-Perot filters into optoelectronic devices. Theoretical and experimental results show that such structures could

Metal-insulator-semiconductor photodetectors.

Science.gov (United States)

Lin, Chu-Hsuan; Liu, Chee Wee

2010-01-01

The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

Metal-Insulator-Semiconductor Photodetectors

Directory of Open Access Journals (Sweden)

Chu-Hsuan Lin

2010-09-01

Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

Self-assembling peptide semiconductors

Science.gov (United States)

Tao, Kai; Makam, Pandeeswar; Aizen, Ruth; Gazit, Ehud

2017-01-01

Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems. PMID:29146781

Semiconductors for plasmonics and metamaterials

DEFF Research Database (Denmark)

Naik, G.V.; Boltasseva, Alexandra

2010-01-01

Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

Spin physics in semiconductors

CERN Document Server

2017-01-01

This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

Oxide semiconductors

CERN Document Server

Svensson, Bengt G; Jagadish, Chennupati

2013-01-01

Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

Semiconductor statistics

CERN Document Server

Blakemore, J S

1962-01-01

Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

Carrier concentration induced ferromagnetism in semiconductors

International Nuclear Information System (INIS)

Story, T.

2007-01-01

In semiconductor spintronics the key materials issue concerns ferromagnetic semiconductors that would, in particular, permit an integration (in a single multilayer heterostructure) of standard electronic functions of semiconductors with magnetic memory function. Although classical semiconductor materials, such as Si or GaAs, are nonmagnetic, upon substitutional incorporation of magnetic ions (typically of a few atomic percents of Mn 2+ ions) and very heavy doping with conducting carriers (at the level of 10 20 - 10 21 cm -3 ) a ferromagnetic transition can be induced in such diluted magnetic semiconductors (also known as semimagnetic semiconductors). In the lecture the spectacular experimental observations of carrier concentration induced ferromagnetism will be discussed for three model semiconductor crystals. p - Ga 1-x Mn x As currently the most actively studied and most perspective ferromagnetic semiconductor of III-V group, in which ferromagnetism appears due to Mn ions providing both local magnetic moments and acting as acceptor centers. p - Sn 1-x Mn x Te and p - Ge 1-x Mn x Te classical diluted magnetic semiconductors of IV-VI group, in which paramagnet-ferromagnet and ferromagnet-spin glass transitions are found for very high hole concentration. n - Eu 1-x Gd x Te mixed magnetic crystals, in which the substitution of Gd 3+ ions for Eu 2+ ions creates very high electron concentration and transforms antiferromagnetic EuTe (insulating compound) into ferromagnetic n-type semiconductor alloy. For each of these materials systems the key physical features will be discussed concerning: local magnetic moments formation, magnetic phase diagram as a function of magnetic ions and carrier concentration as well as Curie temperature and magnetic anisotropy engineering. Various theoretical models proposed to explain the effect of carrier concentration induced ferromagnetism in semiconductors will be briefly discussed involving mean field approaches based on Zener and RKKY

Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy.

Science.gov (United States)

Lee, Woobin; Choi, Seungbeom; Kim, Kyung Tae; Kang, Jingu; Park, Sung Kyu; Kim, Yong-Hoon

2015-12-23

We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a peak is generated in the first-order derivatives of light absorption ( A' ) vs. wavelength (λ) plots, and by tracing the peak center shift and peak intensity, transition from insulating-to-semiconducting state of the film can be monitored. The peak generation and peak center shift are described based on photon-energy-dependent absorption coefficient of metal-oxide films. We discuss detailed analysis method for metal-oxide semiconductor films and its application in thin-film transistor fabrication. We believe this derivative spectroscopy based determination can be beneficial for a non-destructive and a rapid monitoring of the insulator-to-semiconductor transition in sol-gel oxide semiconductor formation.

Organic semiconductors in a spin

CERN Document Server

Samuel, I

2002-01-01

A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

Semiconductor detectors in nuclear and particle physics

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.

1992-01-01

Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups: Classical semiconductor diode detectors and semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported

Nonlinear Elasticity of Doped Semiconductors

Science.gov (United States)

2017-02-01

AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

Physics of semiconductor lasers

CERN Document Server

Mroziewicz, B; Nakwaski, W

2013-01-01

Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

Generalized Bloch Theorem for Complex Periodic Potentials - A Powerful Application to Quantum Transport Calculations

International Nuclear Information System (INIS)

Zhang, Xiaoguang; Varga, Kalman; Pantelides, Sokrates T

2007-01-01

Band-theoretic methods with periodically repeated supercells have been a powerful approach for ground-state electronic structure calculations, but have not so far been adapted for quantum transport problems with open boundary conditions. Here we introduce a generalized Bloch theorem for complex periodic potentials and use a transfer-matrix formulation to cast the transmission probability in a scattering problem with open boundary conditions in terms of the complex wave vectors of a periodic system with absorbing layers, allowing a band technique for quantum transport calculations. The accuracy and utility of the method is demonstrated by the model problems of the transmission of an electron over a square barrier and the scattering of a phonon in an inhomogeneous nanowire. Application to the resistance of a twin boundary in nanocrystalline copper yields excellent agreement with recent experimental data

Semiconductor radiation detection systems

CERN Document Server

2010-01-01

Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

Semiconductor detectors in nuclear and particle physics

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.

1995-01-01

Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups; (i) classical semiconductor diode detectors and (ii) semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported. copyright 1995 American Institute of Physics

A classical-quantum coupling strategy for a hierarchy of one dimensional models for semiconductors

OpenAIRE

Jourdana, Clément; Pietra, Paola; Vauchelet, Nicolas

2014-01-01

We consider one dimensional coupled classical-quantum models for quantum semiconductor device simulations. The coupling occurs in the space variable : the domain of the device is divided into a region with strong quantum effects (quantum zone) and a region where quantum effects are negligible (classical zone). In the classical zone, transport in diffusive approximation is modeled through diffusive limits of the Boltzmann transport equation. This leads to a hierarchy of classical model. The qu...

II-VI semiconductor compounds

CERN Document Server

1993-01-01

For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

Foreword: Focus on Superconductivity in Semiconductors

Directory of Open Access Journals (Sweden)

Yoshihiko Takano

2008-01-01

Full Text Available Since the discovery of superconductivity in diamond, much attention has been given to the issue of superconductivity in semiconductors. Because diamond has a large band gap of 5.5 eV, it is called a wide-gap semiconductor. Upon heavy boron doping over 3×1020 cm−3, diamond becomes metallic and demonstrates superconductivity at temperatures below 11.4 K. This discovery implies that a semiconductor can become a superconductor upon carrier doping. Recently, superconductivity was also discovered in boron-doped silicon and SiC semiconductors. The number of superconducting semiconductors has increased. In 2008 an Fe-based superconductor was discovered in a research project on carrier doping in a LaCuSeO wide-gap semiconductor. This discovery enhanced research activities in the field of superconductivity, where many scientists place particular importance on superconductivity in semiconductors.This focus issue features a variety of topics on superconductivity in semiconductors selected from the 2nd International Workshop on Superconductivity in Diamond and Related Materials (IWSDRM2008, which was held at the National Institute for Materials Science (NIMS, Tsukuba, Japan in July 2008. The 1st workshop was held in 2005 and was published as a special issue in Science and Technology of Advanced Materials (STAM in 2006 (Takano 2006 Sci. Technol. Adv. Mater. 7 S1.The selection of papers describe many important experimental and theoretical studies on superconductivity in semiconductors. Topics on boron-doped diamond include isotope effects (Ekimov et al and the detailed structure of boron sites, and the relation between superconductivity and disorder induced by boron doping. Regarding other semiconductors, the superconducting properties of silicon and SiC (Kriener et al, Muranaka et al and Yanase et al are discussed, and In2O3 (Makise et al is presented as a new superconducting semiconductor. Iron-based superconductors are presented as a new series of high

Energy spectrum, the spin polarization, and the optical selection rules of the Kronig-Penney superlattice model with spin-orbit coupling

Science.gov (United States)

Li, Rui

2018-02-01

The Kronig-Penney model, an exactly solvable one-dimensional model of crystal in solid physics, shows how the allowed and forbidden bands are formed in solids. In this paper, we study this model in the presence of both strong spin-orbit coupling and the Zeeman field. We analytically obtain four transcendental equations that represent an implicit relation between the energy and the Bloch wave vector. Solving these four transcendental equations, we obtain the spin-orbital bands exactly. In addition to the usual band gap opened at the boundary of the Brillouin zone, a much larger spin-orbital band gap is also opened at some special sites inside the Brillouin zone. The x component of the spin-polarization vector is an even function of the Bloch wave vector, while the z component of the spin-polarization vector is an odd function of the Bloch wave vector. At the band edges, the optical transition rates between adjacent bands are nonzero.

Establishment of a cell line from kidney of seabass, Lates calcarifer (Bloch

Directory of Open Access Journals (Sweden)

Phromkunthong, W.

2003-01-01

Full Text Available Primary cell culture from caudal fin and kidney of seabass (Lates calcarifer Bloch using tissue explant method were cultured in three different medias with various salt concentrations. Only seabass kidney (SK cells grew well in Leibovitze's-15 medium containing 8 g/l of NaCl supplemented with 10 % fetal bovine serum at an optimum temperature of 25 oC. Over a period of 24 months, SK cells were subcultured over than 75 passages and exhibited epithelial-like cells. The chromosome number of SK cells was 42. The cells were found to be free from bacterial, fungal and mycoplasma contamination. Seabass cells can be kept at -80 oC and/or in liquid nitrogen (-196 oC for at least 24 months with a survival rate of 83.20 and 74.50 %, respectively. Nine fish viruses were tested for their infectivity and this SK cells were susceptible to sand goby virus (SGV, chub reovirus (CRV, snake-head rhabdovirus (SHRV, red seabream iridovirus (RSIV, seabass iridovirus (SIV and grouper iridovirus-2 (GIV-2.

Semiconductors bonds and bands

CERN Document Server

Ferry, David K

2013-01-01

As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

Matter-wave dark solitons in optical lattices

International Nuclear Information System (INIS)

Louis, Pearl J Y; Ostrovskaya, Elena A; Kivshar, Yuri S

2004-01-01

We analyse the Floquet-Bloch spectrum of matter waves in Bose-Einstein condensates loaded into single-periodic optical lattices and double-periodic superlattices. In the framework of the Gross-Pitaevskii equation, we describe the structure and analyse the mobility properties of matter-wave dark solitons residing on backgrounds of extended nonlinear Bloch-type states. We demonstrate that interactions between dark solitons can be effectively controlled in optical superlattices

Room-temperature ductile inorganic semiconductor

Science.gov (United States)

Shi, Xun; Chen, Hongyi; Hao, Feng; Liu, Ruiheng; Wang, Tuo; Qiu, Pengfei; Burkhardt, Ulrich; Grin, Yuri; Chen, Lidong

2018-05-01

Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic α-Ag2S semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver-silver and sulfur-silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.

Theory of photovoltaic characteristics of semiconductor quantum dot solar cells

International Nuclear Information System (INIS)

Wu, Yuchang; Asryan, Levon V.

2016-01-01

We develop a comprehensive rate equations model for semiconductor quantum dot solar cells (QDSCs). The model is based on the continuity equations with a proper account for quantum dots (QDs). A general analytical expression for the total current density is obtained, and the current-voltage characteristic is studied for several specific situations. The degradation in the open circuit voltage of the QDSC is shown to be due to strong spontaneous radiative recombination in QDs. Due to small absorption coefficient of the QD ensemble, the improvement in the short circuit current density is negligible if only one QD layer is used. If spontaneous radiative recombination would be suppressed in QDs, a QDSC with multiple QD layers would have significantly higher short circuit current density and power conversion efficiency than its conventional counterpart. The effects of photoexcitation of carriers from discrete-energy states in QDs to continuum-energy states are discussed. An extended model, which includes excited states in QDs, is also introduced.

Theory of photovoltaic characteristics of semiconductor quantum dot solar cells

Energy Technology Data Exchange (ETDEWEB)

Wu, Yuchang, E-mail: yuchangw@cumt.edu.cn [Low Carbon Energy Institute, China University of Mining and Technology, Xuzhou 221116 (China); School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116 (China); Asryan, Levon V., E-mail: asryan@vt.edu [Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061 (United States)

2016-08-28

We develop a comprehensive rate equations model for semiconductor quantum dot solar cells (QDSCs). The model is based on the continuity equations with a proper account for quantum dots (QDs). A general analytical expression for the total current density is obtained, and the current-voltage characteristic is studied for several specific situations. The degradation in the open circuit voltage of the QDSC is shown to be due to strong spontaneous radiative recombination in QDs. Due to small absorption coefficient of the QD ensemble, the improvement in the short circuit current density is negligible if only one QD layer is used. If spontaneous radiative recombination would be suppressed in QDs, a QDSC with multiple QD layers would have significantly higher short circuit current density and power conversion efficiency than its conventional counterpart. The effects of photoexcitation of carriers from discrete-energy states in QDs to continuum-energy states are discussed. An extended model, which includes excited states in QDs, is also introduced.

A new phase coding method using a slice selection gradient for high speed flow velocity meaurements in NMR tomography

International Nuclear Information System (INIS)

Oh, C.H.; Cho, Z.H.; California Univ., Irvine

1986-01-01

A new phase coding method using a selection gradient for high speed NMR flow velocity measurements is introduced and discussed. To establish a phase-velocity relationship of flow under the slice selection gradient and spin-echo RF pulse, the Bloch equation was numerically solved under the assumption that only one directional flow exists, i.e. in the direction of slice selection. Details of the numerical solution of the Bloch equation and techniques related to the numerical computations are also given. Finally, using the numerical calculation, high speed flow velocity measurement was attempted and found to be in good agreement with other complementary controlled measurements. (author)

Self-similar solutions of certain coupled integrable systems

CERN Document Server

Chakravarty, S; Kent, S L

2003-01-01

Similarity reductions of the coupled nonlinear Schroedinger equation and an integrable version of the coupled Maxwell-Bloch system are obtained by applying non-translational symmetries. The reduced system of coupled ordinary differential equations are solved in terms of Painleve transcendents, leading to new exact self-similar solutions for these integrable equations.

Self-similar solutions of certain coupled integrable systems

International Nuclear Information System (INIS)

Chakravarty, S; Halburd, R G; Kent, S L

2003-01-01

Similarity reductions of the coupled nonlinear Schroedinger equation and an integrable version of the coupled Maxwell-Bloch system are obtained by applying non-translational symmetries. The reduced system of coupled ordinary differential equations are solved in terms of Painleve transcendents, leading to new exact self-similar solutions for these integrable equations

Roadmap on semiconductor-cell biointerfaces

Science.gov (United States)

Tian, Bozhi; Xu, Shuai; Rogers, John A.; Cestellos-Blanco, Stefano; Yang, Peidong; Carvalho-de-Souza, João L.; Bezanilla, Francisco; Liu, Jia; Bao, Zhenan; Hjort, Martin; Cao, Yuhong; Melosh, Nicholas; Lanzani, Guglielmo; Benfenati, Fabio; Galli, Giulia; Gygi, Francois; Kautz, Rylan; Gorodetsky, Alon A.; Kim, Samuel S.; Lu, Timothy K.; Anikeeva, Polina; Cifra, Michal; Krivosudský, Ondrej; Havelka, Daniel; Jiang, Yuanwen

2018-05-01

This roadmap outlines the role semiconductor-based materials play in understanding the complex biophysical dynamics at multiple length scales, as well as the design and implementation of next-generation electronic, optoelectronic, and mechanical devices for biointerfaces. The roadmap emphasizes the advantages of semiconductor building blocks in interfacing, monitoring, and manipulating the activity of biological components, and discusses the possibility of using active semiconductor-cell interfaces for discovering new signaling processes in the biological world.

High-Q contacted ring microcavities with scatterer-avoiding “wiggler” Bloch wave supermode fields

Energy Technology Data Exchange (ETDEWEB)

Liu, Yangyang, E-mail: yangyang.liu@colorado.edu; Popović, Miloš A., E-mail: milos.popovic@colorado.edu [Nanophotonic Systems Laboratory, Department of Electrical, Computer, and Energy Engineering, University of Colorado, Boulder, Colorado 80309 (United States)

2014-05-19

High-Q ring resonators with contacts to the waveguide core provide a versatile platform for various applications in chip-scale optomechanics, thermo-, and electro-optics. We propose and demonstrate azimuthally periodic contacted ring resonators based on multi-mode Bloch matching that support contacts on both the inner and outer radius edges with small degradation to the optical quality factor (Q). Radiative coupling between degenerate modes of adjacent radial spatial order leads to imaginary frequency (Q) splitting and a scatterer avoiding high-Q “wiggler” supermode field. We experimentally measure Qs up to 258 000 in devices fabricated in a silicon device layer on buried oxide undercladding and up to 139 000 in devices fully suspended in air using an undercut step. Wiggler supermodes are true modes of the microphotonic system that offer additional degrees of freedom in electrical, thermal, and mechanical design.

Introduction to Semiconductor Devices

Science.gov (United States)

Brennan, Kevin F.

2005-03-01

This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

An alternative treatment of heat flow for charge transport in semiconductor devices

International Nuclear Information System (INIS)

Grupen, Matt

2009-01-01

A unique thermodynamic model of Fermi gases suitable for semiconductor device simulation is presented. Like other models, such as drift diffusion and hydrodynamics, it employs moments of the Boltzmann transport equation derived using the Fermi-Dirac distribution function. However, unlike other approaches, it replaces the concept of an electron thermal conductivity with the heat capacity of an ideal Fermi gas to determine heat flow. The model is used to simulate a field-effect transistor and show that the external current-voltage characteristics are strong functions of the state space available to the heated Fermi distribution.

Scanning electron microscopy of semiconductor materials

International Nuclear Information System (INIS)

Bresse, J.F.; Dupuy, M.

1978-01-01

The use of scanning electron microscopy in semiconductors opens up a large field of use. The operating modes lending themselves to the study of semiconductors are the induced current, cathodoluminescence and the use of the potential contrast which can also be applied very effectively to the study of the devices (planar in particular). However, a thorough knowledge of the mechanisms of the penetration of electrons, generation and recombination of generated carriers in a semiconductor is necessary in order to attain a better understanding of the operating modes peculiar to semiconductors [fr

Metallurgy and purification of semiconductor materials

International Nuclear Information System (INIS)

Mughal, G.R.; Ali, M.M.; Ali, I.

1996-01-01

In this article the metallurgical aspects of semiconductor science and technology have been stressed here rather than of the physical and electronic aspect of the subject. Semiconductor technology has not merely presented the metallurgist with new challenges. The ease with which the semiconductor planes cleave make possible, the preparation and study of virgin surface. Semiconductor materials were being widely employed in the study of sub-boundaries and structures and can largely contribute to the study of certain aspects of nucleation and growth, precipitation phenomena, mechanical behaviour, in metallurgy. (A.B.)

Semiconductor Lasers Stability, Instability and Chaos

CERN Document Server

Ohtsubo, Junji

2008-01-01

This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

State of the art in semiconductor detectors

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.

1990-01-01

The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

State of the art in semiconductor detectors

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.

1989-01-01

The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

Solid-state NMR of inorganic semiconductors.

Science.gov (United States)

Yesinowski, James P

2012-01-01

Studies of inorganic semiconductors by solid-state NMR vary widely in terms of the nature of the samples investigated, the techniques employed to observe the NMR signal, and the types of information obtained. Compared with the NMR of diamagnetic non-semiconducting substances, important differences often result from the presence of electron or hole carriers that are the hallmark of semiconductors, and whose theoretical interpretation can be involved. This review aims to provide a broad perspective on the topic for the non-expert by providing: (1) a basic introduction to semiconductor physical concepts relevant to NMR, including common crystal structures and the various methods of making samples; (2) discussions of the NMR spin Hamiltonian, details of some of the NMR techniques and strategies used to make measurements and theoretically predict NMR parameters, and examples of how each of the terms in the Hamiltonian has provided useful information in bulk semiconductors; (3) a discussion of the additional considerations needed to interpret the NMR of nanoscale semiconductors, with selected examples. The area of semiconductor NMR is being revitalized by this interest in nanoscale semiconductors, the great improvements in NMR detection sensitivity and resolution that have occurred, and the current interest in optical pumping and spintronics-related studies. Promising directions for future research will be noted throughout.

Atomic Emission Spectra Diagnosis and Electron Density Measurement of Semiconductor Bridge (SCB) Plasma

International Nuclear Information System (INIS)

Feng Hongyan; Zhu Shunguan; Zhang Lin; Wan Xiaoxia; Li Yan; Shen Ruiqi

2010-01-01

Emission spectra of a semiconductor bridge (SCB) plasma in a visible range was studied in air. The electron density was measured in a conventional way from the broadening of the A1 I 394.4 nm Stark width. Based on the Saha equation, a system for recording the intensity of Si I 390.5 nm and Si II 413.1 nm was designed. With this technique, the SCB plasma electron density was measured well and accurately. Moreover, the electron density distribution Vs time was acquired from one SCB discharge. The individual result from the broadening of the Al I 394.4 nm Stark width and Saha equation was all in the range of 10 15 cm -3 to 10 16 cm -3 . Finally the presumption of the local thermodynamic equilibrium (LTE) condition was validated.

A rigorous proof of the Landau-Peierls formula and much more

DEFF Research Database (Denmark)

Briet, Philippe; Cornean, Horia; Savoie, Baptiste

2012-01-01

We present a rigorous mathematical treatment of the zero-field orbital magnetic susceptibility of a non-interacting Bloch electron gas, at fixed temperature and density, for both metals and semiconductors/insulators. In particular, we obtain the Landau-Peierls formula in the low temperature and d...... and density limit as conjectured by Kjeldaas and Kohn (Phys Rev 105:806–813, 1957)....

Spin physics in semiconductors

CERN Document Server

Dyakonov, Mikhail I

2008-01-01

This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

Modelling of dielectric hysteresis loops in ferroelectric semiconductors with charged defects

International Nuclear Information System (INIS)

Morozovska, Anna N; Eliseev, Eugene A

2004-01-01

We have proposed the phenomenological description of dielectric hysteresis loops in ferroelectric semiconductors with charged defects and prevailing extrinsic conductivity. We have modified the Landau-Ginsburg approach and shown that the macroscopic state of the aforementioned inhomogeneous system can be described by three coupled equations for three order parameters. Both the experimentally observed coercive field values well below the thermodynamic values and the various hysteresis-loop deformations (constricted and double loops) have been obtained in the framework of our model. The obtained results quantitatively explain the ferroelectric switching in such ferroelectric materials as thick PZT films

Low-frequency fluctuation in multimode semiconductor laser subject to optical feedback

Institute of Scientific and Technical Information of China (English)

Xu Zhang; Huiying Ye; Zhaoxin Song

2008-01-01

Dynamics of a semiconductor laser subject to moderate optical feedback operating in the low-frequency fluctuation regime is numerically investigated.Multimode Lang-Kobayashi(LK)equations show that the low-frequency intensity dropout including the total intensity and sub-modes intensity is accompanied by sudden dropout simultaneously,which is in good agreement with experimental observation.The power fluctuation is quite annoying in practical applications,therefore it becomes important to study the mechanism of power fluctuation.It is also shown that many factors,such as spontaneous emission noise and feedback parameter,may influence power fluctuation larger than previously expected.

Charge regulation at semiconductor-electrolyte interfaces.

Science.gov (United States)

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2015-07-01

The interface between a semiconductor material and an electrolyte solution has interesting and complex electrostatic properties. Its behavior will depend on the density of mobile charge carriers that are present in both phases as well as on the surface chemistry at the interface through local charge regulation. The latter is driven by chemical equilibria involving the immobile surface groups and the potential determining ions in the electrolyte solution. All these lead to an electrostatic potential distribution that propagate such that the electrolyte and the semiconductor are dependent on each other. Hence, any variation in the charge density in one phase will lead to a response in the other. This has significant implications on the physical properties of single semiconductor-electrolyte interfaces and on the electrostatic interactions between semiconductor particles suspended in electrolyte solutions. The present paper expands on our previous publication (Fleharty et al., 2014) and offers new results on the electrostatics of single semiconductor interfaces as well as on the interaction of charged semiconductor colloids suspended in electrolyte solution. Copyright © 2014 Elsevier Inc. All rights reserved.

Magnetic excitations in ferromagnetic semiconductors

International Nuclear Information System (INIS)

Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

2009-01-01

Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

Injection of spin-polarized current into semiconductor

International Nuclear Information System (INIS)

Vedyayev, A.V.; Dieny, B.; Ryzhanova, N.V.; Zhukov, I.V.; Zhuravlev, M.Ye.; Lutz, H.O.

2003-01-01

A quantum-statistical theory of injection of spin-polarized current into a semiconductor in ferromagnet/tunnel barrier/semiconductor system is presented. The presence of Schottky barrier in the semiconductor is taken into account. The case of degenerated and non-degenerated semiconductors are considered. Both the diffusive and ballistic transport regime are investigated. The dependence of current polarization on barrier thickness and temperature is calculated

Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces

Directory of Open Access Journals (Sweden)

Yoshihiro Irokawa

2011-01-01

Full Text Available In this paper, I review my recent results in investigating hydrogen sensors using nitride-based semiconductor diodes, focusing on the interaction mechanism of hydrogen with the devices. Firstly, effects of interfacial modification in the devices on hydrogen detection sensitivity are discussed. Surface defects of GaN under Schottky electrodes do not play a critical role in hydrogen sensing characteristics. However, dielectric layers inserted in metal/semiconductor interfaces are found to cause dramatic changes in hydrogen sensing performance, implying that chemical selectivity to hydrogen could be realized. The capacitance-voltage (C-V characteristics reveal that the work function change in the Schottky metal is not responsible mechanism for hydrogen sensitivity. The interface between the metal and the semiconductor plays a critical role in the interaction of hydrogen with semiconductor devises. Secondly, low-frequency C-V characterization is employed to investigate the interaction mechanism of hydrogen with diodes. As a result, it is suggested that the formation of a metal/semiconductor interfacial polarization could be attributed to hydrogen-related dipoles. In addition, using low-frequency C-V characterization leads to clear detection of 100 ppm hydrogen even at room temperature where it is hard to detect hydrogen by using conventional current-voltage (I-V characterization, suggesting that low-frequency C-V method would be effective in detecting very low hydrogen concentrations.

Automation and Integration in Semiconductor Manufacturing

OpenAIRE

Liao, Da-Yin

2010-01-01

Semiconductor automation originates from the prevention and avoidance of frauds in daily fab operations. As semiconductor technology and business continuously advance and grow, manufacturing systems must aggressively evolve to meet the changing technical and business requirements in this industry. Semiconductor manufacturing has been suffering pains from islands of automation. The problems associated with these systems are limited

Dynamics of Peregrine combs and Peregrine walls in an inhomogeneous Hirota and Maxwell-Bloch system

Science.gov (United States)

Wang, Lei; Wang, Zi-Qi; Sun, Wen-Rong; Shi, Yu-Ying; Li, Min; Xu, Min

2017-06-01

Under investigation in this paper is an inhomogeneous Hirota-Maxwell-Bloch (IHMB) system which can describe the propagation of optical solitons in an erbium-doped optical fiber. The breather multiple births (BMBs) are derived with periodically varying group velocity dispersion (GVD) coefficients. Under large periodic modulations in the GVD coefficient of IHMB system, the Peregrine comb (PC) solution is produced, which can be viewed as the limiting case of the BMBs. When the amplitude of the modulation satisfies a special condition, the Peregrine wall (PW) that can be regarded as an intermediate state between rogue wave and PC is obtained. The effects of the third-order dispersion on the spatiotemporal characteristics of PCs and PWs are studied. Our results may be useful for the experimental control and manipulation of the formation of generalized Peregrine rogue waves in inhomogeneous erbium-doped optical fiber.

Thiophene-Based Organic Semiconductors.

Science.gov (United States)

Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

2017-10-24

Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

Device Physics of Narrow Gap Semiconductors

CERN Document Server

Chu, Junhao

2010-01-01

Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detector...

Manipulating semiconductor colloidal stability through doping.

Science.gov (United States)

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2014-10-10

The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

Diode having trenches in a semiconductor region

Energy Technology Data Exchange (ETDEWEB)

Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

2016-03-22

An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

Laser semiconductor diode integrated with frequency doubler

International Nuclear Information System (INIS)

Tighineanu, I.; Dorogan, V.; Suruceanu, G.

2003-01-01

The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

Ultrafast THz Saturable Absorption in Doped Semiconductors

DEFF Research Database (Denmark)

Turchinovich, Dmitry; Hoffmann, Matthias C.

2011-01-01

We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.......We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields....

Semiconductor radiation detectors. Device physics

International Nuclear Information System (INIS)

Lutz, G.

2007-01-01

Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

Epitaxy of semiconductor-superconductor nanowires

DEFF Research Database (Denmark)

Krogstrup, P.; Ziino, N.L.B.; Chang, W.

2015-01-01

Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface...

Semiconductor Lasers Stability, Instability and Chaos

CERN Document Server

Ohtsubo, Junji

2013-01-01

This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

On the modification of the Fermi-Dirac distribution function in degenerate semiconductors

International Nuclear Information System (INIS)

Chakraborty, P.K.; Biswas, S.K.; Ghatak, K.P.

2004-01-01

An attempt is made to study the Fermi-Dirac distribution function in degenerate semiconductors forming band tails (f p ) on the basis of a newly formulated electron dispersion law. It appears, taking n-GaAs as an example, that the influence of the carrier concentration (N i ) on f p is more significant than that of f 0 and f p is more effective than f 0 for higher values of N i . The relative change in Fermi-Dirac function with respect to f0((Δf/f0),Δf=fp-f0) for a fixed value of impurity screening potential, has initially zero value and then decreases with increasing electron energy (E). Thereafter exhibiting the minimum value, the (Δf/f0) increases at a relatively slow rate with increasing E and for higher value of E, f p approaches to f 0 . The present formulation provides us the key to investigate the transport properties of degenerate semiconductors which, in turn, depend on the solution of the Boltzmann transport equation and is expected to agree better with the experiments

Tunable radiation emitting semiconductor device

NARCIS (Netherlands)

2009-01-01

A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

Optical coherent control in semiconductors

DEFF Research Database (Denmark)

Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

2001-01-01

of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

Semiconductor materials and their properties

NARCIS (Netherlands)

Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

2017-01-01

Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

The inhibition of optical excitations and enhancement of Rabi flopping in hybrid quantum dot-metallic nanoparticle systems

International Nuclear Information System (INIS)

Sadeghi, S M

2009-01-01

We study the inhibition of optical excitation and enhancement of Rabi flopping and frequency in semiconductor quantum dots via plasmonic effects. This is done by demonstrating that the interaction of a quantum dot with a laser field in the vicinity of a metallic nanoparticle can be described in terms of optical Bloch equations with a plasmically normalized Rabi frequency. We show that in the weak-field regime plasmonic effects can suppress the interband transitions, inhibiting exciton generation. In the strong-field regime these effects delay the response of the quantum dot to the laser field and enhance Rabi flopping. We relate these to the conversion of Rabi frequency from a real quantity into a complex and strongly frequency-dependent quantity as plasmonic effects become significant. We show that, within the strong-field regime, in the wavelength range where real and imaginary parts of this frequency reach their maxima, a strongly frequency-dependent enhancement of carrier excitation can happen.

Semiconductor opto-electronics

CERN Document Server

Moss, TS; Ellis, B

1972-01-01

Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

Nuclear radiation detection by a variband semiconductor

International Nuclear Information System (INIS)

Volkov, A.S.

1981-01-01

Possibilities of using a variband semiconductor for detecting nuclear radiations are considered. It is shown that the variaband quasielectric field effectively collects charges induced by a nuclear particle only at a small mean free path in the semiconductor (up to 100 μm), the luminescence spectrum of the variband semiconductor when a nuclear particle gets into it, in principle, permits to determine both the energy and mean free path in the semiconductor (even at large mean free paths) [ru

Review of wide band-gap semiconductors technology

Directory of Open Access Journals (Sweden)

Jin Haiwei

2016-01-01

Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.

High speed all optical logic gates based on quantum dot semiconductor optical amplifiers.

Science.gov (United States)

Ma, Shaozhen; Chen, Zhe; Sun, Hongzhi; Dutta, Niloy K

2010-03-29

A scheme to realize all-optical Boolean logic functions AND, XOR and NOT using semiconductor optical amplifiers with quantum-dot active layers is studied. nonlinear dynamics including carrier heating and spectral hole-burning are taken into account together with the rate equations scheme. Results show with QD excited state and wetting layer serving as dual-reservoir of carriers, as well as the ultra fast carrier relaxation of the QD device, this scheme is suitable for high speed Boolean logic operations. Logic operation can be carried out up to speed of 250 Gb/s.

Quantum transport in semiconductor nanowires

NARCIS (Netherlands)

Van Dam, J.

2006-01-01

This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

Science.gov (United States)

Calvez, S.; Adams, M. J.

2012-09-01

Anniversaries call for celebrations. Since it is now fifty years since the first semiconductor lasers were reported, it is highly appropriate to celebrate this anniversary with a Special Issue dedicated to the topic. The semiconductor laser now has a major effect on our daily lives since it has been a key enabler in the development of optical fibre communications (and hence the internet and e-mail), optical storage (CDs, DVDs, etc) and barcode scanners. In the early 1960s it was impossible for most people (with the exception of very few visionaries) to foresee any of these future developments, and the first applications identified were for military purposes (range-finders, target markers, etc). Of course, many of the subsequent laser applications were made possible by developments in semiconductor materials, in the associated growth and fabrication technology, and in the increased understanding of the underlying fundamental physics. These developments continue today, so that the subject of semiconductor lasers, although mature, is in good health and continues to grow. Hence, we can be confident that the pervasive influence of semiconductor lasers will continue to develop as optoelectronics technology makes further advances into other sectors such as healthcare, security and a whole host of applications based on the global imperatives to reduce energy consumption, minimise environmental impact and conserve resources. The papers in this Special Issue are intended to tell some of the story of the last fifty years of laser development as well as to provide evidence of the current state of semiconductor laser research. Hence, there are a number of papers where the early developments are recalled by authors who played prominent parts in the story, followed by a selection of papers from authors who are active in today's exciting research. The twenty-fifth anniversary of the semiconductor laser was celebrated by the publication of a number of papers dealing with the early

Quantum optics with semiconductor nanostructures

CERN Document Server

Jahnke, Frank

2012-01-01

A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

Narrow Bloch walls and intrinsic characteristics of the pseudoternary Nd14Fe78-xMnxC8 systems

International Nuclear Information System (INIS)

Xing, F.; Ho, W.W.

1990-01-01

The lattice constants of Nd 14 Fe 78-x Mn x C 8 compounds decrease with the increase of Mn context x and have a minimum at about x=14. The Curie temperature T c decreases linearly and falls off below room temperature beyond x=14. The strong reduction of the saturation magnetization and T c are attributed to the antiparallel alignment of the Mn and Fe atoms moments. The behavior of magnetization and magnetization reversal in the high-Mn-containing samples at low temperature can be interpreted by the narrow domain wall effect. The relationship of the intrinsic coercive force i H c on temperature agrees well with the exponential formula of the narrow Bloch wall

Ternary chalcopyrite semiconductors

CERN Document Server

Shay, J L; Pamplin, B R

2013-01-01

Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

46 CFR 183.360 - Semiconductor rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 7 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents...

Transport Equations for CAD Modeling of Al(x)Ga(1-x)N/GaN HEMTs

Science.gov (United States)

Freeman, Jon C.

2003-01-01

BEMTs formed from Al(x)Ga(1-x)N/GaN heterostructures are being investigated for high RF power and efficiency around the world by many groups, both academic and industrial. In these devices, the 2DEG formation is dominated by both spontaneous and piezoelectric polarization fields, with each component having nearly the same order of magnitude. The piezoelectric portion is induced by the mechanical strain in the structure, and to analyze these devices, one must incorporate the stress/strain relationships, along with the standard semiconductor transport equations. These equations for Wurtzite GaN are not easily found in the open literature, hence this paper summarizes them, along with the constitutive equations for piezoelectric materials. The equations are cast into the format for the Wurtzite crystal class, which is the most common way GaN is grown epitaxially.

Semiconductor high-energy radiation scintillation detector

International Nuclear Information System (INIS)

Kastalsky, A.; Luryi, S.; Spivak, B.

2006-01-01

We propose a new scintillation-type detector in which high-energy radiation generates electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. An important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombination time of minority carriers. Notably, the fast response comes without any degradation in brightness. When the scintillator is implemented in a qualified semiconductor material (such as InP or GaAs), the photo-detector and associated circuits can be epitaxially integrated on the scintillator slab and the structure can be stacked-up to achieve virtually any desired absorption capability

46 CFR 129.360 - Semiconductor-rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a...

46 CFR 120.360 - Semiconductor rectifier systems.

Science.gov (United States)

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a...

Ag-based semiconductor photocatalysts in environmental purification

Energy Technology Data Exchange (ETDEWEB)

Li, Jiade; Fang, Wen [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); Yu, Changlin, E-mail: yuchanglinjx@163.com [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); School of Environment Engineering and biology Engineering, Guangdong University of Petrochemical Technology, Maoming, 525000 Guangdong Province (China); Zhou, Wanqin [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, 350002 (China); Zhu, Lihua [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); Xie, Yu, E-mail: xieyu_121@163.com [College of Environment and Chemical Engineering, Nanchang Hangkong University, Nanchang 330063, Jiangxi (China)

2015-12-15

Graphical abstract: Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Formation of heterojunction could largely promote the electron/hole pair separation, resulting in highly photocatalytic activity and stability. - Highlights: • Recent research progress in the fabrication and application of Ag-based semiconductor photocatalyts. • The advantages and disadvantages of Ag-based semiconductor as photocatalysts. • Strategies in design Ag-based semiconductor photocatalysts with high performance. - Abstract: Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO{sub 2}, ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag

Ag-based semiconductor photocatalysts in environmental purification

International Nuclear Information System (INIS)

Li, Jiade; Fang, Wen; Yu, Changlin; Zhou, Wanqin; Zhu, Lihua; Xie, Yu

2015-01-01

Graphical abstract: Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Formation of heterojunction could largely promote the electron/hole pair separation, resulting in highly photocatalytic activity and stability. - Highlights: • Recent research progress in the fabrication and application of Ag-based semiconductor photocatalyts. • The advantages and disadvantages of Ag-based semiconductor as photocatalysts. • Strategies in design Ag-based semiconductor photocatalysts with high performance. - Abstract: Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO 2 , ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag

Towards high charge carrier mobilities by rational design of organic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Andrienko, Denis; Ruehle, Victor; Baumeier, Bjoern; Vehoff, Thorsten; Lukyanov, Alexander; Kremer, Kurt [Max Planck Institute for Polymer Research, Mainz (Germany); Marcon, Valentina [Technische Universitaet Darmstadt (Germany); Kirkpatrick, James; Nelson, Jenny [Imperial College London (United Kingdom); Lennartz, Christian [BASF AG, Ludwigshafen (Germany)

2010-07-01

The role of material morphology on charge carrier mobility in partially disordered organic semiconductors is discussed for several classes of materials: derivatives of hexabenzocoronenens, perylenediimides, triangularly-shaped polyaromatic hydrocarbons, and Alq{sub 3}. Simulations are performed using a package developed by Imperial College, London and Max Planck Institute for Polymer Research, Mainz (votca.org). This package combines several techniques into one scheme: quantum chemical methods for the calculation of molecular electronic structures and reorganization energies; molecular dynamics and systematic coarse-graining approaches for simulation of self-assembly and relative positions and orientations of molecules on large scales; kinetic Monte Carlo and master equation for studies of charge transport.

Mechanisms of current flow in metal-semiconductor ohmic contacts

International Nuclear Information System (INIS)

Blank, T. V.; Gol'dberg, Yu. A.

2007-01-01

Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II-VI semiconductors (ZnSe, ZnO), III-V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1-0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3-0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed

Life-cycle assessment of semiconductors

CERN Document Server

Boyd, Sarah B

2012-01-01

Life-Cycle Assessment of Semiconductors presents the first and thus far only available transparent and complete life cycle assessment of semiconductor devices. A lack of reliable semiconductor LCA data has been a major challenge to evaluation of the potential environmental benefits of information technologies (IT). The analysis and results presented in this book will allow a higher degree of confidence and certainty in decisions concerning the use of IT in efforts to reduce climate change and other environmental effects. Coverage includes but is not limited to semiconductor manufacturing trends by product type and geography, unique coverage of life-cycle assessment, with a focus on uncertainty and sensitivity analysis of energy and global warming missions for CMOS logic devices, life cycle assessment of flash memory and life cycle assessment of DRAM. The information and conclusions discussed here will be highly relevant and useful to individuals and institutions. The book also: Provides a detailed, complete a...

Apparatus for testing semiconductor devices and capacitors

International Nuclear Information System (INIS)

York, R.A.

1984-01-01

An apparatus is provided for testing semiconductor devices. The apparatus tests the impedance of the semiconductor devices in both conducting and non-conducting states to detect semiconductors whose impedance in the conducting state is too high or whose impedance in the non-conducting state is too low. The apparatus uses a battery source for low voltage d.c. The circuitry for detecting when the impedance is too high in the conducting state includes a lamp in series with the battery source and the semiconductor device, whereby the impedance of the semiconductor device determines whether sufficient current will flow through the lamp to cause the lamp to illuminate. A d.c. to d.c. converter is provided to boost the voltage from the battery source to a relatively high voltage d.c. The relatively high voltage d.c. can be connected by a switch to circuitry for detecting when the impedance of the semiconductor device in the non-conducting state is too low. The circuitry for detecting when the impedance of the semiconductor device is too low includes a resistor which senses the current flowing in the device and converts the current into a voltage proportional to the leakage current. This voltage is then compared against a fixed reference. Further circuitry is provided for providing a visual indication when the voltage representative of leakage in relation to the reference signal indicates that there is excessive current flow through the semiconductor device

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

Directory of Open Access Journals (Sweden)

S. Tongay

2012-01-01

Full Text Available Using current-voltage (I-V, capacitance-voltage (C-V, and electric-field-modulated Raman measurements, we report on the unique physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene and conventional semiconductors. When chemical-vapor-deposited graphene is transferred onto n-type Si, GaAs, 4H-SiC, and GaN semiconductor substrates, there is a strong van-der-Waals attraction that is accompanied by charge transfer across the interface and the formation of a rectifying (Schottky barrier. Thermionic-emission theory in conjunction with the Schottky-Mott model within the context of bond-polarization theory provides a surprisingly good description of the electrical properties. Applications can be made to sensors, where in forward bias there is exponential sensitivity to changes in the Schottky-barrier height due to the presence of absorbates on the graphene, and to analog devices, for which Schottky barriers are integral components. Such applications are promising because of graphene’s mechanical stability, its resistance to diffusion, its robustness at high temperatures, and its demonstrated capability to embrace multiple functionalities.

Reflection technique for thermal mapping of semiconductors

Science.gov (United States)

Walter, Martin J.

1989-06-20

Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

Porous and Nanoporous Semiconductors and Emerging Applications

Directory of Open Access Journals (Sweden)

Helmut Föll

2006-01-01

Full Text Available Pores in single-crystalline semiconductors can be produced in a wide range of geometries and morphologies, including the “nanometer” regime. Porous semiconductors may have properties completely different from the bulk, and metamaterials with, for example, optical properties not encountered in natural materials are emerging. Possible applications of porous semiconductors include various novel sensors, but also more “exotic” uses as, for example, high explosives or electrodes for micro-fuel cells. The paper briefly reviews pore formation (including more applied aspects of large area etching, properties of porous semiconductors, and emerging applications.

Emission and Absorption Entropy Generation in Semiconductors

DEFF Research Database (Denmark)

Reck, Kasper; Varpula, Aapo; Prunnila, Mika

2013-01-01

While emission and absorption entropy generation is well known in black bodies, it has not previously been studied in semiconductors, even though semiconductors are widely used for solar light absorption in modern solar cells [1]. We present an analysis of the entropy generation in semiconductor...... materials due to emission and absorption of electromagnetic radiation. It is shown that the emission and absorption entropy generation reduces the fundamental limit on the efficiency of any semiconductor solar cell even further than the Landsberg limit. The results are derived from purely thermodynamical...

Advances in semiconductor photodetectors for scintillators

International Nuclear Information System (INIS)

Farrell, R.; Olschner, F.; Shah, K.; Squillante, M.R.

1997-01-01

Semiconductors photodetectors have long seemed an attractive alternative for scintillation detection, but only recently have semiconductor photodiodes been proven suitable for some room temperature applications. There are many applications, however for which the performance of standard silicon p-i-n photodiodes is not satisfactory. This article reviews recent progress in two different families of novel semiconductor photodetectors: (1) wide bandgap compound semiconductors and (2) silicon photodetectors with enhanced signal-to-noise ratio. The compounds discussed and compared in this paper are HgI 2 , PbI 2 , InI, TlBr, TlBr 1-x I x and HgBr 1-x I x . The paper will also examine unity gain silicon drift diodes and avalanche photodiodes with maximum room temperature gain greater than 10000. (orig.)

The Bergman spaces, the Bloch space and the pluriharmonic conjugates in the unit ball of Cn

International Nuclear Information System (INIS)

Shi Jihuai.

1989-06-01

It has been proved that if f is holomorphic in the unit ball B of C m , then f is an element of L p (B,dν) if all the functions (1 - |z| 2 ) m (D n f)(z) with |α| = m are in L p (B,dν). This method can only deal with the case of p ≥ 1. In this paper, we give a new approach to prove that the above result holds for all p is an element of (0, ∞). A simple proof about the characterization of the Bloch space will be given. As a by-product of our approach, we generalize a theorem to the unit ball of C m , and use this result to generalize some theorems about the pluriharmonic conjugates to the case 0 < p < 1. 9 refs

One-dimensional unstable eigenfunction and manifold computations in delay differential equations

International Nuclear Information System (INIS)

Green, Kirk; Krauskopf, Bernd; Engelborghs, Koen

2004-01-01

In this paper we present a new numerical technique for computing the unstable eigenfunctions of a saddle periodic orbit in a delay differential equation. This is used to obtain the necessary starting data for an established algorithm for computing one-dimensional (1D) unstable manifolds of an associated saddle fixed point of a suitable Poincare map. To illustrate our method, we investigate an intermittent transition to chaos in a delay system describing a semiconductor laser subject to phase-conjugate feedback

Laser Cooling of 2-6 Semiconductors

Science.gov (United States)

2016-08-12

AFRL-AFOSR-JP-TR-2016-0067 Laser Cooling of II-VI Semiconductors Qihua Xiong NANYANG TECHNOLOGICAL UNIVERSITY Final Report 08/12/2016 DISTRIBUTION A...From - To) 15 May 2013 to 14 May 2016 4. TITLE AND SUBTITLE Laser Cooling of II-VI Semiconductors 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-13-1...13. SUPPLEMENTARY NOTES 14. ABSTRACT The breakthrough of laser cooling in semiconductor has stimulated strong interest in further scaling up towards

Isotopically controlled semiconductors

Energy Technology Data Exchange (ETDEWEB)

Haller, Eugene E.

2006-06-19

The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

Semiconductor Nanocrystals for Biological Imaging

Energy Technology Data Exchange (ETDEWEB)

Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

2005-06-28

Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

Progress in semiconductor drift detectors

International Nuclear Information System (INIS)

Rehak, P.; Walton, J.; Gatti, E.

1985-01-01

Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

Photoelectronic properties of semiconductors

CERN Document Server

Bube, Richard H

1992-01-01

The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

The Bloch self-consistently renormalized spin wave approximation and behaviour of some thermodynamic quantities of a Heisenberg ferromagnet in the critical region

International Nuclear Information System (INIS)

Jezewski, W.

1979-01-01

Properties of the Bloch self-consistently renormalized spin wave approximation are analyzed near the zero-field transition temperature Tsub(m). The analysis is carried out on the basis of the application of this approximation to the Heisenberg ferromagnet involving nearest neighbour interaction. Series expansions for the resulting Helmholtz free energy, magnetization, and specific heat in the reduced temperature t=(Tsub(m)-T)/Tsub(m) are derived and the critical exponents β and α' are obtained. The limiting case of infinite spin (the classical limit) is also investigated. (author)

Bond particle model for semiconductor melts and its application to liquid structure germanium

International Nuclear Information System (INIS)

Ferrante, A.; Tosi, M.P.

1988-08-01

A simple type of liquid state model is proposed to describe on a primitive level the melt of an elemental group IV semiconductor as a mixture of atoms and bond particles. The latter, on increase of a coupling strength parameter becomes increasingly localized between pairs of atoms up to local tetrahedral coordination of atoms by bond particles. Angular interatomic correlations are built into the model as bond particle localization grows, even though the bare interactions between the components of the liquid are formally described solely in terms of central pair potentials. The model is solved for liquid structure by standard integral equation techniques of liquid state theory and by Monte Carlo simulation, for values of the parameters which are appropriate to liquid germanium down to strongly supercooled states. The calculated liquid structure is compared with the results of diffraction experiments on liquid germanium near freezing and discussed in relation to diffraction data on amorphous germanium. The model suggests simple melting criteria for elemental and polar semiconductors, which are empirically verified. (author). 25 refs, 9 figs, 3 tabs

Ultrafast dynamic optical prop erties of graphene%石墨烯超快动态光学性质∗

Institute of Scientific and Technical Information of China (English)

金芹; 董海明; 韩奎; 王雪峰

2015-01-01

Graphene exhibits excellent ultrafast optical properties due to its unique electronic structure. In this paper we investigate theoretically the ultrafast dynamic optical properties of graphene based on the Bloch-equations, and introduce the theoretical model of graphene. First, we give the energy which has a linear relationship with the wave vector k. The behavior of electrons in the vicinity of the two Dirac points can be described by the massless Dirac-equation, thus we have the Dirac equation of graphene. Second, we discuss the interaction between graphene and light field. The Bloch-equations of graphene are obtained through the Heisenberg equation and then we discuss the photon carriers ,electric polarization and optical current change over time by analyzing the Bloch-equations. It is found that the nonequilibrium carriers in graphene induced by a terahertz field can be built in 20–200 fs due to the Pauli blocking and the conservation of energy principle. The photon carrier density will increase with the frequency of enhanced light field. Thus an optical current can be created rapidly within 1 ps. A graphene system responds linearly to the external optical field for √2evFE0t≪~ω, while the graphene systems respond nonlinearly to the external optical field, where E0 andωare respectively the intensity and the frequency of the light, t is the time and vF the Dirac velocity in graphene. The electric polarization and optical current increase with increasing photon energies. These theoretical results are in agreement with recent experimental findings and indicate that graphene exhibits important features and has practical applications in the ultrafast optic filed, especially in terahertz field.

Semiconductor sensors

International Nuclear Information System (INIS)

Hartmann, Frank

2011-01-01

Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

Terahertz Nonlinear Optics in Semiconductors

DEFF Research Database (Denmark)

Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

2013-01-01

We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

Squeezing in an injection-locked semiconductor laser

Science.gov (United States)

Inoue, S.; Machida, S.; Yamamoto, Y.; Ohzu, H.

1993-09-01

The intensity-noise properties of an injection-locked semiconductor laser were studied experimentally. The constant-current-driven semiconductor laser producing the amplitude-squeezed state whose intensity noise was reduced below the standard quantum limit (SQL) by 0.72 dB was injection-locked by an external master laser. The measured intensity-noise level of the injection-locked semiconductor laser was 0.91 dB below the SQL. This experimental result indicates that a phase-coherent amplitude-squeezed state or squeezed vacuum state together with a reference local oscillator wave can be generated directly by semiconductor laser systems.

Waveguide based external cavity semiconductor lasers

NARCIS (Netherlands)

Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

2012-01-01

We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

Violation of Bloch's Law That Specifies Reciprocity of Intensity and Duration with Brief Light Flashes

Directory of Open Access Journals (Sweden)

Ernest Greene

2013-12-01

Full Text Available For more than a century researchers have been reporting that the visual impact of a very brief flash is determined by the quantity of photons that the flash delivers. This has been variously described as the Bunsen-Roscoe Law or Bloch's Law, often specified as reciprocity of intensity × duration. Prior research found no evidence for such reciprocity when microsecond-duration flashes from a light-emitting diode array were used to display the major contours of nameable shapes. The present work tested with flash durations ranging up to 100 ms and also found no reciprocity. This departure from classic principles might be due to the specific range of wavelengths of the light-emitting diodes and to a mesopic level of ambient light, which together would preclude activation of rods. The reciprocity of intensity and duration may only be valid with full dark adaptation and very dim flashes that activate rods.

Metal-semiconductor, composite radiation detectors

International Nuclear Information System (INIS)

Orvis, W.J.; Yee, J.H.; Fuess, D.A.

1991-12-01

In 1989, Naruse and Hatayama of Toshiba published a design for an increased efficiency x-ray detector. The design increased the efficiency of a semiconductor detector by interspersing layers of high-z metal within it. Semiconductors such as silicon make good, high-resolution radiation detectors, but they have low efficiency because they are low-z materials (z = 14). High-z metals, on the other hand, are good absorbers of high-energy photons. By interspersing high-z metal layers with semiconductor layers, Naruse and Hatayama combined the high absorption efficiency of the high-z metals with good detection capabilities of a semiconductor. This project is an attempt to use the same design to produce a high- efficiency gamma ray detector. By their nature, gamma rays require thicker metal layers to efficiently absorb them. These thicker layers change the behavior of the detector by reducing the resolution, compared to a solid state detector, and shifting the photopeak by a predictable amount. During the last year, we have modeled parts of the detector and have nearly completed a prototype device. 2 refs

Market survey of semiconductors

International Nuclear Information System (INIS)

Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

1977-06-01

Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

Dispersion-induced nonlinearities in semiconductors

DEFF Research Database (Denmark)

Mørk, Jesper; Mecozzi, A.

2002-01-01

A dispersive and saturable medium is shown, under very general conditions, to possess ultrafast dynamic behaviour due to non-adiabatic polarisation dynamics. Simple analytical expressions relating the effect to the refractive index dispersion of a semiconductor ire derived and the magnitude...... of the equivalent Kerr coefficient is shown to be in qualitative agreement with measurements on active semiconductor waveguides....

Molecular semiconductors photoelectrical properties and solar cells

CERN Document Server

Rees, Ch

1985-01-01

During the past thirty years considerable efforts have been made to design the synthesis and the study of molecular semiconductors. Molecular semiconductors - and more generally molecular materials - involve interactions between individual subunits which can be separately synthesized. Organic and metallo-organic derivatives are the basis of most of the molecular materials. A survey of the literature on molecular semiconductors leaves one rather confused. It does seem to be very difficult to correlate the molecular structure of these semiconductors with their experimental electrical properties. For inorganic materials a simple definition delimits a fairly homogeneous family. If an inorganic material has a conductivity intermediate between that of an 12 1 1 3 1 1 insulator « 10- n- cm- ) and that of a metal (> 10 n- cm- ), then it is a semiconductor and will exhibit the characteristic properties of this family, such as junction formation, photoconductivity, and the photovoltaic effect. For molecular compounds,...

A reduced-order representation of the Schrödinger equation

Directory of Open Access Journals (Sweden)

Ming-C. Cheng

2016-09-01

Full Text Available A reduced-order-based representation of the Schrödinger equation is investigated for electron wave functions in semiconductor nanostructures. In this representation, the Schrödinger equation is projected onto an eigenspace described by a small number of basis functions that are generated from the proper orthogonal decomposition (POD. The approach substantially reduces the numerical degrees of freedom (DOF’s needed to numerically solve the Schrödinger equation for the wave functions and eigenstate energies in a quantum structure and offers an accurate solution as detailed as the direct numerical simulation of the Schrödinger equation. To develop such an approach, numerical data accounting for parametric variations of the system are used to perform decomposition in order to generate the POD eigenvalues and eigenvectors for the system. This approach is applied to develop POD models for single and multiple quantum well structure. Errors resulting from the approach are examined in detail associated with the selected numerical DOF’s of the POD model and quality of data used for generation of the POD eigenvalues and basis functions. This study investigates the fundamental concepts of the POD approach to the Schrödinger equation and paves a way toward developing an efficient modeling methodology for large-scale multi-block simulation of quantum nanostructures.

A size selective porous silicon grating-coupled Bloch surface and sub-surface wave biosensor.

Science.gov (United States)

Rodriguez, Gilberto A; Ryckman, Judson D; Jiao, Yang; Weiss, Sharon M

2014-03-15

A porous silicon (PSi) grating-coupled Bloch surface and sub-surface wave (BSW/BSSW) biosensor is demonstrated to size selectively detect the presence of both large and small molecules. The BSW is used to sense large immobilized analytes at the surface of the structure while the BSSW that is confined inside but near the top of the structure is used to sensitively detect small molecules. Functionality of the BSW and BSSW modes is theoretically described by dispersion relations, field confinements, and simulated refractive index shifts within the structure. The theoretical results are experimentally verified by detecting two different small chemical molecules and one large 40 base DNA oligonucleotide. The PSi-BSW/BSSW structure is benchmarked against current porous silicon technology and is shown to have a 6-fold higher sensitivity in detecting large molecules and a 33% improvement in detecting small molecules. This is the first report of a grating-coupled BSW biosensor and the first report of a BSSW propagating mode. © 2013 Published by Elsevier B.V.

Semiconductor quantum-dot lasers and amplifiers

DEFF Research Database (Denmark)

Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

2002-01-01

-power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

Differential geometric invariants for time-reversal symmetric Bloch-bundles: The “Real” case

International Nuclear Information System (INIS)

De Nittis, Giuseppe; Gomi, Kiyonori

2016-01-01

Topological quantum systems subjected to an even (resp. odd) time-reversal symmetry can be classified by looking at the related “Real” (resp. “Quaternionic”) Bloch-bundles. If from one side the topological classification of these time-reversal vector bundle theories has been completely described in De Nittis and Gomi [J. Geom. Phys. 86, 303–338 (2014)] for the “Real” case and in De Nittis and Gomi [Commun. Math. Phys. 339, 1–55 (2015)] for the “Quaternionic” case, from the other side it seems that a classification in terms of differential geometric invariants is still missing in the literature. With this article and its companion [G. De Nittis and K. Gomi (unpublished)] we want to cover this gap. More precisely, we extend in an equivariant way the theory of connections on principal bundles and vector bundles endowed with a time-reversal symmetry. In the “Real” case we generalize the Chern-Weil theory and we show that the assignment of a “Real” connection, along with the related differential Chern class and its holonomy, suffices for the classification of “Real” vector bundles in low dimensions.

Semiconductors: A 21st Century Social Studies Topic.

Science.gov (United States)

Sunal, Cynthia

2000-01-01

Addresses the reasons for exploring semiconductor technology and organic semiconductors in schools for either middle school or secondary students in an interdisciplinary social studies and science environment. Provides background information on transistors and semiconductors. Offers three social studies lessons and related science lessons if an…

Radiation effects in semiconductors

CERN Document Server

2011-01-01

There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

The nonlinear carrier transport in a bipolar semiconductor sample

International Nuclear Information System (INIS)

Konin, A

2008-01-01

A theory of formation of the voltage across a bipolar semiconductor sample due to the current flow accounting for the energy band bending near the semiconductor surfaces is presented. The non-equilibrium space charge layers near the sample surfaces and the boundary conditions in the real metal-semiconductor junction have been taken into account. It is shown that the voltage-current relation of a thin sample at weak injection differs essentially from the classical Ohm's law and becomes nonlinear for certain semiconductor surface parameters. Complex voltage-current relations and the photo-induced electromotive force measurements allow determining the surface recombination rate in the real metal-semiconductor junction and the semiconductor surface potential

Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser; Construccion de un amplificador optico de semiconductor a partir de un laser de semiconductor Fabry-Perot

Energy Technology Data Exchange (ETDEWEB)

Garcia, E.; Soto, H.; Marquez, H.; Valles V, N. [Departamento de Electronica y Telecomunicaciones, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada. Km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, Baja California (Mexico)

2000-07-01

A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

Is There a Better Semiconductor Firm in Taiwan?

Directory of Open Access Journals (Sweden)

Cheng-Wen LEE

2017-06-01

Full Text Available The authors investigate the firm value of semiconductor industry in Taiwan in order to differentiate between outstanding semiconductor company and weak semiconductor company. The authors use GAP which is analytical tool to perform four steps: the original maps, sorting maps with clustering trees, summary sufficient maps, and sediment maps. The findings offer a good instruction for policymakers to make related policies in semiconductor firms. Additionally, the paper helps to find firms needed to be reformed through classification by GAP.

Hydrogen in semiconductors II

CERN Document Server

Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

1999-01-01

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

Thienoacene-based organic semiconductors.

Science.gov (United States)

Takimiya, Kazuo; Shinamura, Shoji; Osaka, Itaru; Miyazaki, Eigo

2011-10-11

Thienoacenes consist of fused thiophene rings in a ladder-type molecular structure and have been intensively studied as potential organic semiconductors for organic field-effect transistors (OFETs) in the last decade. They are reviewed here. Despite their simple and similar molecular structures, the hitherto reported properties of thienoacene-based OFETs are rather diverse. This Review focuses on four classes of thienoacenes, which are classified in terms of their chemical structures, and elucidates the molecular electronic structure of each class. The packing structures of thienoacenes and the thus-estimated solid-state electronic structures are correlated to their carrier transport properties in OFET devices. With this perspective of the molecular structures of thienoacenes and their carrier transport properties in OFET devices, the structure-property relationships in thienoacene-based organic semiconductors are discussed. The discussion provides insight into new molecular design strategies for the development of superior organic semiconductors. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The Physics of Semiconductors

Science.gov (United States)

Brennan, Kevin F.

1999-02-01

Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

Luminescence in colloidal Mn2+-doped semiconductor nanocrystals

International Nuclear Information System (INIS)

Beaulac, Remi; Archer, Paul I.; Gamelin, Daniel R.

2008-01-01

Recent advances in nanocrystal doping chemistries have substantially broadened the variety of photophysical properties that can be observed in colloidal Mn 2+ -doped semiconductor nanocrystals. A brief overview is provided, focusing on Mn 2+ -doped II-VI semiconductor nanocrystals prepared by direct chemical synthesis and capped with coordinating surface ligands. These Mn 2+ -doped semiconductor nanocrystals are organized into three major groups according to the location of various Mn 2+ -related excited states relative to the energy gap of the host semiconductor nanocrystals. The positioning of these excited states gives rise to three distinct relaxation scenarios following photoexcitation. A brief outlook on future research directions is provided. - Graphical abstract: Mn 2+ -doped semiconductor nanocrystals are organized into three major groups according to the location of various Mn 2+ -related excited states relative to the energy gap of the host semiconductor nanocrystals. The positioning of these excited states gives rise to three distinct relaxation scenarios following photoexcitation

Semiconductor photocatalysis principles and applications

CERN Document Server

Kisch, Horst

2014-01-01

Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

Introduction to cathodoluminescence in semiconductors

International Nuclear Information System (INIS)

Dussac, M.

1985-01-01

The use of cathodoluminescence in a scanning electron microscope leads to acquire a spectrum in a place of the sample surface, or to register the intensity profile of a special emission band along a scanning line, or also to realize a map of the irradiated sample. Composition variations can then, at ambient temperature, be determined, also defects can be shown, together with grain joints and dislocations, radiative and non radiative regions can be distinguished and, at low temperature, elementary processes of luminescence can be studied and impurities identified in semiconductors. Through this analysis method is applicable to every insulating or semiconductor material (that is to say to every material having a gap), in this article only crystalline semi-conductor will be studied [fr

A position-dependent mass model for the Thomas–Fermi potential: Exact solvability and relation to δ-doped semiconductors

Energy Technology Data Exchange (ETDEWEB)

Schulze-Halberg, Axel, E-mail: xbataxel@gmail.com [Department of Mathematics and Actuarial Science, Indiana University Northwest, 3400 Broadway, Gary IN 46408 (United States); García-Ravelo, Jesús; Pacheco-García, Christian [Escuela Superior de Física y Matemáticas, Instituto Politécnico Nacional, Unidad Profesional Adolfo López Mateos, Zacatenco, 07738 México D.F. (Mexico); Juan Peña Gil, José [Universidad Autónoma Metropolitana - Azcapotzalco, CBI - Area de Física Atómica Molecular Aplicada, Av. San Pablo 180, Reynosa Azcapotzalco, 02200 México D.F. (Mexico)

2013-06-15

We consider the Schrödinger equation in the Thomas–Fermi field, a model that has been used for describing electron systems in δ-doped semiconductors. It is shown that the problem becomes exactly-solvable if a particular effective (position-dependent) mass distribution is incorporated. Orthogonal sets of normalizable bound state solutions are constructed in explicit form, and the associated energies are determined. We compare our results with the corresponding findings on the constant-mass problem discussed by Ioriatti (1990) [13]. -- Highlights: ► We introduce an exactly solvable, position-dependent mass model for the Thomas–Fermi potential. ► Orthogonal sets of solutions to our model are constructed in closed form. ► Relation to delta-doped semiconductors is discussed. ► Explicit subband bottom energies are calculated and compared to results obtained in a previous study.

A position-dependent mass model for the Thomas–Fermi potential: Exact solvability and relation to δ-doped semiconductors

International Nuclear Information System (INIS)

Schulze-Halberg, Axel; García-Ravelo, Jesús; Pacheco-García, Christian; Juan Peña Gil, José

2013-01-01

We consider the Schrödinger equation in the Thomas–Fermi field, a model that has been used for describing electron systems in δ-doped semiconductors. It is shown that the problem becomes exactly-solvable if a particular effective (position-dependent) mass distribution is incorporated. Orthogonal sets of normalizable bound state solutions are constructed in explicit form, and the associated energies are determined. We compare our results with the corresponding findings on the constant-mass problem discussed by Ioriatti (1990) [13]. -- Highlights: ► We introduce an exactly solvable, position-dependent mass model for the Thomas–Fermi potential. ► Orthogonal sets of solutions to our model are constructed in closed form. ► Relation to delta-doped semiconductors is discussed. ► Explicit subband bottom energies are calculated and compared to results obtained in a previous study

Two-fluid hydrodynamic model for semiconductors

DEFF Research Database (Denmark)

Maack, Johan Rosenkrantz; Mortensen, N. Asger; Wubs, Martijn

2018-01-01

The hydrodynamic Drude model (HDM) has been successful in describing the optical properties of metallic nanostructures, but for semiconductors where several different kinds of charge carriers are present an extended theory is required. We present a two-fluid hydrodynamic model for semiconductors...

Switching waves dynamics in optical bistable cavity-free system at femtosecond laser pulse propagation in semiconductor under light diffraction

Science.gov (United States)

Trofimov, Vyacheslav A.; Egorenkov, Vladimir A.; Loginova, Maria M.

2018-02-01

We consider a propagation of laser pulse in a semiconductor under the conditions of an occurrence of optical bistability, which appears due to a nonlinear absorption of the semiconductor. As a result, the domains of high concentration of free charged particles (electrons and ionized donors) occur if an intensity of the incident optical pulse is greater than certain intensity. As it is well-known, that an optical beam must undergo a diffraction on (or reflection from) the domains boundaries. Usually, the beam diffraction along a coordinate of the optical pulse propagation does not take into account by using the slowly varying envelope approximation for the laser pulse interaction with optical bistable element. Therefore, a reflection of the beam from the domains with abrupt boundary does not take into account under computer simulation of the laser pulse propagation. However, the optical beams, reflected from nonhomogeneities caused by the domains of high concentration of free-charged particles, can essentially influence on a formation of switching waves in a semiconductor. We illustrate this statement by computer simulation results provided on the base of nonlinear Schrödinger equation and a set of PDEs, which describe an evolution of the semiconductor characteristics (concentrations of free-charged particles and potential of an electric field strength), and taking into account the longitudinal and transverse diffraction effects.

Crystal structure optimisation using an auxiliary equation of state

Science.gov (United States)

Jackson, Adam J.; Skelton, Jonathan M.; Hendon, Christopher H.; Butler, Keith T.; Walsh, Aron

2015-11-01

Standard procedures for local crystal-structure optimisation involve numerous energy and force calculations. It is common to calculate an energy-volume curve, fitting an equation of state around the equilibrium cell volume. This is a computationally intensive process, in particular, for low-symmetry crystal structures where each isochoric optimisation involves energy minimisation over many degrees of freedom. Such procedures can be prohibitive for non-local exchange-correlation functionals or other "beyond" density functional theory electronic structure techniques, particularly where analytical gradients are not available. We present a simple approach for efficient optimisation of crystal structures based on a known equation of state. The equilibrium volume can be predicted from one single-point calculation and refined with successive calculations if required. The approach is validated for PbS, PbTe, ZnS, and ZnTe using nine density functionals and applied to the quaternary semiconductor Cu2ZnSnS4 and the magnetic metal-organic framework HKUST-1.

Crystal structure optimisation using an auxiliary equation of state

International Nuclear Information System (INIS)

Jackson, Adam J.; Skelton, Jonathan M.; Hendon, Christopher H.; Butler, Keith T.; 3 Institute and Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of))" data-affiliation=" (Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom); Global E3 Institute and Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of))" >Walsh, Aron

2015-01-01

Standard procedures for local crystal-structure optimisation involve numerous energy and force calculations. It is common to calculate an energy–volume curve, fitting an equation of state around the equilibrium cell volume. This is a computationally intensive process, in particular, for low-symmetry crystal structures where each isochoric optimisation involves energy minimisation over many degrees of freedom. Such procedures can be prohibitive for non-local exchange-correlation functionals or other “beyond” density functional theory electronic structure techniques, particularly where analytical gradients are not available. We present a simple approach for efficient optimisation of crystal structures based on a known equation of state. The equilibrium volume can be predicted from one single-point calculation and refined with successive calculations if required. The approach is validated for PbS, PbTe, ZnS, and ZnTe using nine density functionals and applied to the quaternary semiconductor Cu 2 ZnSnS 4 and the magnetic metal-organic framework HKUST-1

Crystal structure optimisation using an auxiliary equation of state

Energy Technology Data Exchange (ETDEWEB)

Jackson, Adam J.; Skelton, Jonathan M.; Hendon, Christopher H.; Butler, Keith T. [Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom); Walsh, Aron, E-mail: a.walsh@bath.ac.uk [Centre for Sustainable Chemical Technologies and Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom); Global E" 3 Institute and Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)

2015-11-14

Standard procedures for local crystal-structure optimisation involve numerous energy and force calculations. It is common to calculate an energy–volume curve, fitting an equation of state around the equilibrium cell volume. This is a computationally intensive process, in particular, for low-symmetry crystal structures where each isochoric optimisation involves energy minimisation over many degrees of freedom. Such procedures can be prohibitive for non-local exchange-correlation functionals or other “beyond” density functional theory electronic structure techniques, particularly where analytical gradients are not available. We present a simple approach for efficient optimisation of crystal structures based on a known equation of state. The equilibrium volume can be predicted from one single-point calculation and refined with successive calculations if required. The approach is validated for PbS, PbTe, ZnS, and ZnTe using nine density functionals and applied to the quaternary semiconductor Cu{sub 2}ZnSnS{sub 4} and the magnetic metal-organic framework HKUST-1.

Advances in semiconductor lasers

CERN Document Server

Coleman, James J; Jagadish, Chennupati

2012-01-01

Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

Complex-envelope alternating-direction-implicit FDTD method for simulating active photonic devices with semiconductor/solid-state media.

Science.gov (United States)

Singh, Gurpreet; Ravi, Koustuban; Wang, Qian; Ho, Seng-Tiong

2012-06-15

A complex-envelope (CE) alternating-direction-implicit (ADI) finite-difference time-domain (FDTD) approach to treat light-matter interaction self-consistently with electromagnetic field evolution for efficient simulations of active photonic devices is presented for the first time (to our best knowledge). The active medium (AM) is modeled using an efficient multilevel system of carrier rate equations to yield the correct carrier distributions, suitable for modeling semiconductor/solid-state media accurately. To include the AM in the CE-ADI-FDTD method, a first-order differential system involving CE fields in the AM is first set up. The system matrix that includes AM parameters is then split into two time-dependent submatrices that are then used in an efficient ADI splitting formula. The proposed CE-ADI-FDTD approach with AM takes 22% of the time as the approach of the corresponding explicit FDTD, as validated by semiconductor microdisk laser simulations.

Power semiconductor device adaptive cooling assembly

NARCIS (Netherlands)

2011-01-01

The invention relates to a power semiconductor device (100) cooling assembly for cooling a power semiconductor device (100), wherein the assembly comprises an actively cooled heat sink (102) and a controller (208; 300), wherein the controller (208; 300) is adapted for adjusting the cooling

The dispersion of the refractive index of semiconductors at the edge of their intrinsic absorption

International Nuclear Information System (INIS)

Kudykina, T.A.; Lisitsa, M.P.

1986-01-01

The authors discuss the frequency dependence of the refractive index of various semiconductors near the edge of their intrinsic absorption in both theory and experiment. Beginning with random phase approximation, equations are presented which include all possible excitations and result in values for the width of the forbidden energy gap, the oscillator strengths, and spectral functions for the absorption coefficients. Data are presented for the following materials: CdS, CdSe, CdTe, GaSb, InP, GaAs, ZnTe, PbTe, InAs, InSb, and ZnSe

Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

Science.gov (United States)

Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

2011-08-23

A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

Controlling Molecular Doping in Organic Semiconductors.

Science.gov (United States)

Jacobs, Ian E; Moulé, Adam J

2017-11-01

The field of organic electronics thrives on the hope of enabling low-cost, solution-processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution-processed p-type doped polymeric semiconductors. Highlighted topics include how solution-processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication-applications beyond those directly analogous to inorganic doping. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Semiconductor Optics

CERN Document Server

Klingshirn, Claus F

2012-01-01

This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

Dissipative chaos in semiconductor superlattices

Directory of Open Access Journals (Sweden)

F. Moghadam

2008-03-01

Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

A nonlinear equation for ionic diffusion in a strong binary electrolyte

Science.gov (United States)

Ghosal, Sandip; Chen, Zhen

2010-01-01

The problem of the one-dimensional electro-diffusion of ions in a strong binary electrolyte is considered. The mathematical description, known as the Poisson–Nernst–Planck (PNP) system, consists of a diffusion equation for each species augmented by transport owing to a self-consistent electrostatic field determined by the Poisson equation. This description is also relevant to other important problems in physics, such as electron and hole diffusion across semiconductor junctions and the diffusion of ions in plasmas. If concentrations do not vary appreciably over distances of the order of the Debye length, the Poisson equation can be replaced by the condition of local charge neutrality first introduced by Planck. It can then be shown that both species diffuse at the same rate with a common diffusivity that is intermediate between that of the slow and fast species (ambipolar diffusion). Here, we derive a more general theory by exploiting the ratio of the Debye length to a characteristic length scale as a small asymptotic parameter. It is shown that the concentration of either species may be described by a nonlinear partial differential equation that provides a better approximation than the classical linear equation for ambipolar diffusion, but reduces to it in the appropriate limit. PMID:21818176

All-optical packet envelope detection using a slow semiconductor saturable absorber gate and a semiconductor optical amplifier

NARCIS (Netherlands)

Porzi, C.; Fresi, F.; Poti, L.; Bogoni, A.; Guina, M.; Orsila, L.; Okhotnikov, O.; Calabretta, N.

2008-01-01

Abstract—We propose a simple and effective scheme for alloptical packet envelope detection (AO-PED), exploiting a slow saturable absorber-based vertical cavity semiconductor gate and a semiconductor optical amplifier. A high extinction ratio of 15 dB was measured for the recovered envelope signal.

Analysis and simulation of semiconductor devices

CERN Document Server

Selberherr, Siegfried

1984-01-01

The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the s...

X-ray absorption spectroscopy of semiconductors

CERN Document Server

Ridgway, Mark

2015-01-01

X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-sit...

Semiconductor X-ray spectrometers

International Nuclear Information System (INIS)

Muggleton, A.H.F.

1978-02-01

An outline is given of recent developments in particle and photon induced x-ray fluorescence (XRF) analysis. Following a brief description of the basic mechanism of semiconductor detector operation a comparison is made between semiconductor detectors, scintillators and gas filled proportional devices. Detector fabrication and cryostat design are described in more detail and the effects of various device parameters on system performance, such as energy resolution, count rate capability, efficiency, microphony, etc. are discussed. The main applications of these detectors in x-ray fluorescence analysis, electron microprobe analysis, medical and pollution studies are reviewed

Compound semiconductor device physics

CERN Document Server

Tiwari, Sandip

2013-01-01

This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

Photocatalytic semiconductors synthesis, characterization, and environmental applications

CERN Document Server

Hernández-Ramírez, Aracely

2014-01-01

This critical volume examines the different methods used for the synthesis of a great number of photocatalysts, including TiO2, ZnO and other modified semiconductors, as well as characterization techniques used for determining the optical, structural and morphological properties of the semiconducting materials. Additionally, the authors discuss photoelectrochemical methods for determining the light activity of the photocatalytic semiconductors by means of measurement of properties such as band gap energy, flat band potential and kinetics of hole and electron transfer. Photocatalytic Semiconductors: Synthesis, Characterization and Environmental Applications provide an overview of the semiconductor materials from first- to third-generation photocatalysts and their applications in wastewater treatment and water disinfection. The book further presents economic and toxicological aspects in the production and application of photocatalytic materials.

Conductivity-limiting bipolar thermal conductivity in semiconductors

Science.gov (United States)

Wang, Shanyu; Yang, Jiong; Toll, Trevor; Yang, Jihui; Zhang, Wenqing; Tang, Xinfeng

2015-01-01

Intriguing experimental results raised the question about the fundamental mechanisms governing the electron-hole coupling induced bipolar thermal conduction in semiconductors. Our combined theoretical analysis and experimental measurements show that in semiconductors bipolar thermal transport is in general a “conductivity-limiting” phenomenon, and it is thus controlled by the carrier mobility ratio and by the minority carrier partial electrical conductivity for the intrinsic and extrinsic cases, respectively. Our numerical method quantifies the role of electronic band structure and carrier scattering mechanisms. We have successfully demonstrated bipolar thermal conductivity reduction in doped semiconductors via electronic band structure modulation and/or preferential minority carrier scatterings. We expect this study to be beneficial to the current interests in optimizing thermoelectric properties of narrow gap semiconductors. PMID:25970560

EDITORIAL: Focus on Dilute Magnetic Semiconductors FOCUS ON DILUTE MAGNETIC SEMICONDUCTORS

Science.gov (United States)

Chambers, Scott A.; Gallagher, Bryan

2008-05-01

This focus issue of New Journal of Physics is devoted to the materials science of dilute magnetic semiconductors (DMS). A DMS is traditionally defined as a diamagnetic semiconductor doped with a few to several atomic per cent of some transition metal with unpaired d electrons. Several kinds of dopant-dopant interactions can in principle couple the dopant spins leading to a ferromagnetic ground state in a dilute magnetic system. These include superexchange, which occurs principally in oxides and only between dopants with one intervening oxygen, and double exchange, in which dopants of different formal charges exchange an electron. In both of these mechanisms, the ferromagnetic alignment is not critically dependent on free carriers in the host semiconductor because exchange occurs via bonds. A third mechanism, discovered in the last few years, involves electrons associated with lattice defects that can apparently couple dopant spins. This mechanism is not well understood. Finally, the most desirable mechanism is carrier-mediated exchange interaction in which the dopant spins are coupled by itinerant electrons or holes in the host semiconductor. This mechanism introduces a fundamental link between magnetic and electrical transport properties and offers the possibility of new spintronic functionalities. In particular electrical gate control of ferromagnetism and the use of spin polarized currents to carry signals for analog and digital applications. The spin light emitting diode is a prototypical device of this kind that has been extensively used to characterize the extent of spin polarization in the active light emitting semiconductor heterostructure. The prototypical carrier mediated ferromagnetic DMS is Mn-doped GaAs. This and closely related narrow gap III-V materials have been very extensively studied. Their properties are generally quite well understood and they have led to important insights into fundamental properties of ferromagnetic systems with strong spin

A quick and easy test for deciding entanglement status of an N-qubit pure quantum state

International Nuclear Information System (INIS)

Mehendale, D.P.; Joag, P.S.

2018-01-01

We develop a simple criterion in terms of a necessary-sufficient condition (NS condition) for deciding separability of an arbitrary n-qubit pure quantum state. This NS condition provides a quick and easy test procedure to determine the entanglement status of a pure quantum state. We normalize the given quantum state and using this normalized state we can easily build a simplest system of equations containing trigonometric functions by making use of the well known Bloch Sphere representation for single qubit states and check whether or not this system of equations is consistent. According to proposed NS condition the given pure quantum state is separable (entangled) if and only if the above mentioned system of equations is consistent (inconsistent). We build this system of equations by equating the coefficients of computational basis states in the superposition representing the given pure quantum state with certain products of trigonometric functions obtained using standard Bloch Sphere representation for single qubit states. To establish separability of given state one requires to find a valid solution of the above mentioned system of equations but entanglement on the other hand follows when any two equations in this system of equations are mutually inconsistent. Thus, entanglement of the state can follow easily if one succeeds in finding any two mutually inconsistent equations in the above mentioned system of equations.

Semiconductor Quantum Dash Broadband Emitters: Modeling and Experiments

KAUST Repository

Khan, Mohammed Zahed Mustafa

2013-10-01

Broadband light emitters operation, which covers multiple wavelengths of the electromagnetic spectrum, has been established as an indispensable element to the human kind, continuously advancing the living standard by serving as sources in important multi-disciplinary field applications such as biomedical imaging and sensing, general lighting and internet and mobile phone connectivity. In general, most commercial broadband light sources relies on complex systems for broadband light generation which are bulky, and energy hungry. \\tRecent demonstration of ultra-broadband emission from semiconductor light sources in the form of superluminescent light emitting diodes (SLDs) has paved way in realization of broadband emitters on a completely novel platform, which offered compactness, cost effectiveness, and comparatively energy efficient, and are already serving as a key component in medical imaging systems. The low power-bandwidth product is inherent in SLDs operating in the amplified spontaneous emission regime. A quantum leap in the advancement of broadband emitters, in which high power and large bandwidth (in tens of nm) are in demand. Recently, the birth of a new class of broadband semiconductor laser diode (LDs) producing multiple wavelength light in stimulated emission regime was demonstrated. This very recent manifestation of a high power-bandwidth-product semiconductor broadband LDs relies on interband optical transitions via quantum confined dot/dash nanostructures and exploiting the natural inhomogeneity of the self-assembled growth technology. This concept is highly interesting and extending the broad spectrum of stimulated emission by novel device design forms the central focus of this dissertation. \\tIn this work, a simple rate equation numerical technique for modeling InAs/InP quantum dash laser incorporating the properties of inhomogeneous broadening effect on lasing spectra was developed and discussed, followed by a comprehensive experimental analysis

Modelling colliding-pulse mode-locked semiconductor lasers

DEFF Research Database (Denmark)

Bischoff, Svend

or to determine the optimum operation conditions. The purpose of this thesis is to elucidate some of the physics of interest in the field of semiconductor laser modelling, semiconductor optics and fiber optics. To be more specific we will investigate: The Colliding-Pulse Mode-Locked (CPM) Quantum Well (QW) laser...... diode; the excitonic semiconductor response for varying material thickness in the case of linear optics; and modulational instability of electromagnetic waves in media with spatially varying non-linearity....

Electronic structure of filled tetrahedral semiconductors

NARCIS (Netherlands)

Wood, D.M.; Zunger, Alex; Groot, R. de

1985-01-01

We discuss the susceptibility of zinc-blende semiconductors to band-structure modification by insertion of small atoms at their tetrahedral interstitial states. GaP is found to become a direct-gap semiconductor with two He atoms present at its interstitial sites; Si does not. Analysis of the factors