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Sample records for semiconductor bloch equations

  1. Squeezing corrections to the Bloch equations

    International Nuclear Information System (INIS)

    Abundo, M.; Accardi, L.

    1991-01-01

    The general analysis of quantum noise shows that a squeezing noise can produce quadratic nonlinearities in the Langevin equations leading to the Bloch equations. These quadratic nonlinearities are governed by the imaginary part of the off-diagonal terms of the covariance of the noise (the squeezing terms) and imply a correction to the usual form of the Bloch equations. Here the case of spin-one nuclei subjected to squeezing noises of particular type is studied numerically. It is shown that the corrections to the Bloch equations, suggested by the theory, to the behaviour of the macroscopic nuclear polarization in a scale of times of the order of the relaxation time can be quite substantial. In the equilibrium regime, even if the qualitative behaviour of the system is the same (exponential decay), the numerical equilibrium values predicted by the theory are consistently different from those predicted by the usual Bloch equation. It is suggested that this difference might be used to test experimentally the observable effects of squeezing noises

  2. Chaos synchronization of nonlinear Bloch equations

    International Nuclear Information System (INIS)

    Park, Ju H.

    2006-01-01

    In this paper, the problem of chaos synchronization of Bloch equations is considered. A novel nonlinear controller is designed based on the Lyapunov stability theory. The proposed controller ensures that the states of the controlled chaotic slave system asymptotically synchronizes the states of the master system. A numerical example is given to illuminate the design procedure and advantage of the result derived

  3. Optical Bloch equations with multiply connected states

    International Nuclear Information System (INIS)

    Stacey, D N; Lucas, D M; Allcock, D T C; Szwer, D J; Webster, S C

    2008-01-01

    The optical Bloch equations, which give the time evolution of the elements of the density matrix of an atomic system subject to radiation, are generalized so that they can be applied when transitions between pairs of states can proceed by more than one stimulated route. The case considered is that for which the time scale of interest in the problem is long compared with that set by the differences in detuning of the radiation fields stimulating via the different routes. It is shown that the Bloch equations then reduce to the standard form of linear differential equations with constant coefficients. The theory is applied to a two-state system driven by two lasers with different intensities and frequencies and to a three-state Λ-system with one laser driving one transition and two driving the second. It is also shown that the theory reproduces well the observed response of a cold 40 Ca + ion when subject to a single laser frequency driving the 4S 1/2 -4P 1/2 transition and a laser with two strong sidebands driving 3D 3/2 -4P 1/2

  4. Chaotic dynamics in the Maxwell-Bloch equations

    International Nuclear Information System (INIS)

    Holm, D.D.; Kovacic, G.

    1992-01-01

    In the slowly varying envelope approximation and the rotating wave approximation for the Maxwell-Bloch equations, we describe how the presence of a small-amplitude probe laser in an excited, two-level, resonant medium leads to homoclinic chaos in the laser-matter dynamics. We also describe a derivation of the Maxwell-Bloch equations from an action principle

  5. Terahertz emission of Bloch oscillators excited by electromagnetic field in lateral semiconductor superlattices

    International Nuclear Information System (INIS)

    Dodin, E.P.; Zharov, A.A.

    2003-01-01

    The effect of the strong high-frequency electromagnetic field on the lateral semiconductor superlattice is considered on the basis of the quasi-classical theory on the electron transport in the self-consistent wave arrangement. It is theoretically identified, that the lateral superlattice in the strong feed-up wave field may emit the terahertz radiation wave trains, which are associated with the periodical excitation of the Bloch oscillations in the superlattice. The conditions, required for the Bloch oscillators radiation observation, are determined. The spectral composition of the radiation, passing through the superlattice, and energy efficiency of multiplying the frequency, related to the Bloch oscillator excitation, are calculated [ru

  6. Resonant absorption in semiconductor nanowires and nanowire arrays: Relating leaky waveguide modes to Bloch photonic crystal modes

    Energy Technology Data Exchange (ETDEWEB)

    Fountaine, Katherine T., E-mail: kfountai@caltech.edu [Department of Chemistry and Chemical Engineering, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States); Joint Center for Artificial Photosynthesis, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States); Whitney, William S. [Joint Center for Artificial Photosynthesis, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States); Department of Physics, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States); Atwater, Harry A. [Joint Center for Artificial Photosynthesis, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States); Department of Applied Physics and Materials Science, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125 (United States)

    2014-10-21

    We present a unified framework for resonant absorption in periodic arrays of high index semiconductor nanowires that combines a leaky waveguide theory perspective and that of photonic crystals supporting Bloch modes, as array density transitions from sparse to dense. Full dispersion relations are calculated for each mode at varying illumination angles using the eigenvalue equation for leaky waveguide modes of an infinite dielectric cylinder. The dispersion relations along with symmetry arguments explain the selectivity of mode excitation and spectral red-shifting of absorption for illumination parallel to the nanowire axis in comparison to perpendicular illumination. Analysis of photonic crystal band dispersion for varying array density illustrates that the modes responsible for resonant nanowire absorption emerge from the leaky waveguide modes.

  7. Properties of solutions of Bloch-type equations for the paraelectric phase of KDP

    Energy Technology Data Exchange (ETDEWEB)

    Glowacki, M; Paszkiewicz, T [Wroclaw Univ. (Poland). Inst. Fyziki Teoretycznej

    1979-10-01

    Exact solutions for two sets of Bloch-like equations describing the paraelectric phase of the model of KDP were studied. The general properties of both solutions are the same. However, in numerical calculations they differ significantly. A modification of the decay law connected with the soft mode frequency fluctuations is considered.

  8. Comprehensive solutions to the Bloch equations and dynamical models for open two-level systems

    Science.gov (United States)

    Skinner, Thomas E.

    2018-01-01

    The Bloch equation and its variants constitute the fundamental dynamical model for arbitrary two-level systems. Many important processes, including those in more complicated systems, can be modeled and understood through the two-level approximation. It is therefore of widespread relevance, especially as it relates to understanding dissipative processes in current cutting-edge applications of quantum mechanics. Although the Bloch equation has been the subject of considerable analysis in the 70 years since its inception, there is still, perhaps surprisingly, significant work that can be done. This paper extends the scope of previous analyses. It provides a framework for more fully understanding the dynamics of dissipative two-level systems. A solution is derived that is compact, tractable, and completely general, in contrast to previous results. Any solution of the Bloch equation depends on three roots of a cubic polynomial that are crucial to the time dependence of the system. The roots are typically only sketched out qualitatively, with no indication of their dependence on the physical parameters of the problem. Degenerate roots, which modify the solutions, have been ignored altogether. Here the roots are obtained explicitly in terms of a single real-valued root that is expressed as a simple function of the system parameters. For the conventional Bloch equation, a simple graphical representation of this root is presented that makes evident the explicit time dependence of the system for each point in the parameter space. Several intuitive, visual models of system dynamics are developed. A Euclidean coordinate system is identified in which any generalized Bloch equation is separable, i.e., the sum of commuting rotation and relaxation operators. The time evolution in this frame is simply a rotation followed by relaxation at modified rates that play a role similar to the standard longitudinal and transverse rates. These rates are functions of the applied field, which

  9. Quantum Theory of Conducting Matter Newtonian Equations of Motion for a Bloch Electron

    CERN Document Server

    Fujita, Shigeji

    2007-01-01

    Quantum Theory of Conducting Matter: Newtonian Equations of Motion for a Bloch Electron targets scientists, researchers and graduate-level students focused on experimentation in the fields of physics, chemistry, electrical engineering, and material sciences. It is important that the reader have an understanding of dynamics, quantum mechanics, thermodynamics, statistical mechanics, electromagnetism and solid-state physics. Many worked-out problems are included in the book to aid the reader's comprehension of the subject. The Bloch electron (wave packet) moves by following the Newtonian equation of motion. Under an applied magnetic field B the electron circulates around the field B counterclockwise or clockwise depending on the curvature of the Fermi surface. The signs of the Hall coefficient and the Seebeck coefficient are known to give the sign of the major carrier charge. For alkali metals, both are negative, indicating that the carriers are "electrons." These features arise from the Fermi surface difference...

  10. General PFG signal attenuation expressions for anisotropic anomalous diffusion by modified-Bloch equations

    Science.gov (United States)

    Lin, Guoxing

    2018-05-01

    Anomalous diffusion exists widely in polymer and biological systems. Pulsed-field gradient (PFG) anomalous diffusion is complicated, especially in the anisotropic case where limited research has been reported. A general PFG signal attenuation expression, including the finite gradient pulse (FGPW) effect for free general anisotropic fractional diffusion { 0 integral modified-Bloch equation, were extended to obtain general PFG signal attenuation expressions for anisotropic anomalous diffusion. Various cases of PFG anisotropic anomalous diffusion were investigated, including coupled and uncoupled anisotropic anomalous diffusion. The continuous-time random walk (CTRW) simulation was also carried out to support the theoretical results. The theory and the CTRW simulation agree with each other. The obtained signal attenuation expressions and the three-dimensional fractional modified-Bloch equations are important for analyzing PFG anisotropic anomalous diffusion in NMR and MRI.

  11. Chaos synchronization in bi-axial magnets modeled by Bloch equation

    International Nuclear Information System (INIS)

    Moukam Kakmeni, F.M.; Nguenang, J.P.; Kofane, T.C.

    2005-10-01

    In this paper, we show that the bi-axial magnetic material modelled by Bloch equation admits chaotic solutions for a certain set of numerical values assigned to the system of parameters and initial conditions. Using the unidirectional linear and nonlinear feedback schemes, we demonstrate that two such systems can be synchronized together. The chaotic synchronization is discussed in the context of complete synchronization which means that the difference of the states of two relevant systems converge to zero. (author)

  12. Effective Hamiltonians, two level systems, and generalized Maxwell-Bloch equations

    International Nuclear Information System (INIS)

    Sczaniecki, L.

    1981-02-01

    A new method is proposed involving a canonical transformation leading to the non-secular part of time-independent perturbation calculus. The method is used to derive expressions for effective Shen-Walls Hamiltonians which, taken in the two-level approximation and on the inclusion of non-Hamiltonian terms into the dynamics of the system, lead to generalized Maxwell-Bloch equations. The rotating wave approximation is written anew within the framework of our formalism. (author)

  13. Simulation of NMR signals through the Bloch equations; Simulação de sinais de RMN através das equações de Bloch

    Energy Technology Data Exchange (ETDEWEB)

    Moraes, Tiago Bueno, E-mail: tiagobuemoraes@gmail.com [Universidade de Sao Paulo (USP), Sao Carlos, SP (Brazil). Inst. de Física; Colnago, Luiz Alberto, E-mail: tiagobuemoraes@gmail.com [Embrapa Instrumentação, São Carlos, SP (Brazil)

    2014-07-01

    The aim of this paper was to present a simple and fast way of simulating Nuclear Magnetic Resonance signals using the Bloch equations. These phenomenological equations describe the classical behavior of macroscopic magnetization and are easily simulated using rotation matrices. Many NMR pulse sequences can be simulated with this formalism, allowing a quantitative description of the influence of many experimental parameters. Finally, the paper presents simulations of conventional sequences such as Single Pulse, Inversion Recovery, Spin Echo and CPMG. (author)

  14. A Bloch-Torrey Equation for Diffusion in a Deforming Media

    International Nuclear Information System (INIS)

    Rohmer, Damien; Gullberg, Grant T.

    2006-01-01

    Diffusion Tensor Magnetic Resonance Imaging (DTMRI)technique enables the measurement of diffusion parameters and therefore, informs on the structure of the biological tissue. This technique is applied with success to the static organs such as brain. However, the diffusion measurement on the dynamically deformable organs such as the in-vivo heart is a complex problem that has however a great potential in the measurement of cardiac health. In order to understand the behavior of the Magnetic Resonance (MR)signal in a deforming media, the Bloch-Torrey equation that leads the MR behavior is expressed in general curvilinear coordinates. These coordinates enable to follow the heart geometry and deformations through time. The equation is finally discredited and presented in a numerical formulation using implicit methods, in order to get a stable scheme that can be applied to any smooth deformations. Diffusion process enables the link between the macroscopic behavior of molecules and the microscopic structure in which they evolve. The measurement of diffusion in biological tissues is therefore of major importance in understanding the complex underlying structure that cannot be studied directly. The Diffusion Tensor Magnetic Resonance Imaging(DTMRI) technique enables the measurement of diffusion parameters and therefore provides information on the structure of the biological tissue. This technique has been applied with success to static organs such as the brain. However, diffusion measurement of dynamically deformable organs such as the in-vivo heart remains a complex problem, which holds great potential in determining cardiac health. In order to understand the behavior of the magnetic resonance (MR) signal in a deforming media, the Bloch-Torrey equation that defines the MR behavior is expressed in general curvilinear coordinates. These coordinates enable us to follow the heart geometry and deformations through time. The equation is finally discredited and presented in a

  15. A Bloch-Torrey Equation for Diffusion in a Deforming Media

    Energy Technology Data Exchange (ETDEWEB)

    Rohmer, Damien; Gullberg, Grant T.

    2006-12-29

    Diffusion Tensor Magnetic Resonance Imaging (DTMRI)technique enables the measurement of diffusion parameters and therefore,informs on the structure of the biological tissue. This technique isapplied with success to the static organs such as brain. However, thediffusion measurement on the dynamically deformable organs such as thein-vivo heart is a complex problem that has however a great potential inthe measurement of cardiac health. In order to understand the behavior ofthe Magnetic Resonance (MR)signal in a deforming media, the Bloch-Torreyequation that leads the MR behavior is expressed in general curvilinearcoordinates. These coordinates enable to follow the heart geometry anddeformations through time. The equation is finally discretized andpresented in a numerical formulation using implicit methods, in order toget a stable scheme that can be applied to any smooth deformations.Diffusion process enables the link between the macroscopic behavior ofmolecules and themicroscopic structure in which they evolve. Themeasurement of diffusion in biological tissues is therefore of majorimportance in understanding the complex underlying structure that cannotbe studied directly. The Diffusion Tensor Magnetic ResonanceImaging(DTMRI) technique enables the measurement of diffusion parametersand therefore provides information on the structure of the biologicaltissue. This technique has been applied with success to static organssuch as the brain. However, diffusion measurement of dynamicallydeformable organs such as the in-vivo heart remains a complex problem,which holds great potential in determining cardiac health. In order tounderstand the behavior of the magnetic resonance (MR) signal in adeforming media, the Bloch-Torrey equation that defines the MR behavioris expressed in general curvilinear coordinates. These coordinates enableus to follow the heart geometry and deformations through time. Theequation is finally discretized and presented in a numerical formulationusing

  16. Iterative solution of the semiconductor device equations

    Energy Technology Data Exchange (ETDEWEB)

    Bova, S.W.; Carey, G.F. [Univ. of Texas, Austin, TX (United States)

    1996-12-31

    Most semiconductor device models can be described by a nonlinear Poisson equation for the electrostatic potential coupled to a system of convection-reaction-diffusion equations for the transport of charge and energy. These equations are typically solved in a decoupled fashion and e.g. Newton`s method is used to obtain the resulting sequences of linear systems. The Poisson problem leads to a symmetric, positive definite system which we solve iteratively using conjugate gradient. The transport equations lead to nonsymmetric, indefinite systems, thereby complicating the selection of an appropriate iterative method. Moreover, their solutions exhibit steep layers and are subject to numerical oscillations and instabilities if standard Galerkin-type discretization strategies are used. In the present study, we use an upwind finite element technique for the transport equations. We also evaluate the performance of different iterative methods for the transport equations and investigate various preconditioners for a few generalized gradient methods. Numerical examples are given for a representative two-dimensional depletion MOSFET.

  17. Modeling High Frequency Semiconductor Devices Using Maxwell's Equations

    National Research Council Canada - National Science Library

    El-Ghazaly, Samier

    1999-01-01

    .... In this research, we first replaced the conventional semiconductor device models, which are based on Poisson's Equation as a semiconductor model, with a new one that uses the full-wave electro...

  18. Computational Diffusion Magnetic Resonance Imaging Based on Time-Dependent Bloch NMR Flow Equation and Bessel Functions.

    Science.gov (United States)

    Awojoyogbe, Bamidele O; Dada, Michael O; Onwu, Samuel O; Ige, Taofeeq A; Akinwande, Ninuola I

    2016-04-01

    Magnetic resonance imaging (MRI) uses a powerful magnetic field along with radio waves and a computer to produce highly detailed "slice-by-slice" pictures of virtually all internal structures of matter. The results enable physicians to examine parts of the body in minute detail and identify diseases in ways that are not possible with other techniques. For example, MRI is one of the few imaging tools that can see through bones, making it an excellent tool for examining the brain and other soft tissues. Pulsed-field gradient experiments provide a straightforward means of obtaining information on the translational motion of nuclear spins. However, the interpretation of the data is complicated by the effects of restricting geometries as in the case of most cancerous tissues and the mathematical concept required to account for this becomes very difficult. Most diffusion magnetic resonance techniques are based on the Stejskal-Tanner formulation usually derived from the Bloch-Torrey partial differential equation by including additional terms to accommodate the diffusion effect. Despite the early success of this technique, it has been shown that it has important limitations, the most of which occurs when there is orientation heterogeneity of the fibers in the voxel of interest (VOI). Overcoming this difficulty requires the specification of diffusion coefficients as function of spatial coordinate(s) and such a phenomenon is an indication of non-uniform compartmental conditions which can be analyzed accurately by solving the time-dependent Bloch NMR flow equation analytically. In this study, a mathematical formulation of magnetic resonance flow sequence in restricted geometry is developed based on a general second order partial differential equation derived directly from the fundamental Bloch NMR flow equations. The NMR signal is obtained completely in terms of NMR experimental parameters. The process is described based on Bessel functions and properties that can make it

  19. The quantum group, Harper equation and structure of Bloch eigenstates on a honeycomb lattice

    International Nuclear Information System (INIS)

    Eliashvili, M; Tsitsishvili, G; Japaridze, G I

    2012-01-01

    The tight-binding model of quantum particles on a honeycomb lattice is investigated in the presence of a homogeneous magnetic field. Provided the magnetic flux per unit hexagon is a rational of the elementary flux, the one-particle Hamiltonian is expressed in terms of the generators of the quantum group U q (sl 2 ). Employing the functional representation of the quantum group U q (sl 2 ), the Harper equation is rewritten as a system of two coupled functional equations in the complex plane. For the special values of quasi-momentum, the entangled system admits solutions in terms of polynomials. The system is shown to exhibit a certain symmetry allowing us to resolve the entanglement, and a basic single equation determining the eigenvalues and eigenstates (polynomials) is obtained. Equations specifying the locations of the roots of polynomials in the complex plane are found. Employing numerical analysis, the roots of polynomials corresponding to different eigenstates are solved and diagrams exhibiting the ordered structure of one-particle eigenstates are depicted. (paper)

  20. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  1. Maximum Entropy Closure of Balance Equations for Miniband Semiconductor Superlattices

    Directory of Open Access Journals (Sweden)

    Luis L. Bonilla

    2016-07-01

    Full Text Available Charge transport in nanosized electronic systems is described by semiclassical or quantum kinetic equations that are often costly to solve numerically and difficult to reduce systematically to macroscopic balance equations for densities, currents, temperatures and other moments of macroscopic variables. The maximum entropy principle can be used to close the system of equations for the moments but its accuracy or range of validity are not always clear. In this paper, we compare numerical solutions of balance equations for nonlinear electron transport in semiconductor superlattices. The equations have been obtained from Boltzmann–Poisson kinetic equations very far from equilibrium for strong fields, either by the maximum entropy principle or by a systematic Chapman–Enskog perturbation procedure. Both approaches produce the same current-voltage characteristic curve for uniform fields. When the superlattices are DC voltage biased in a region where there are stable time periodic solutions corresponding to recycling and motion of electric field pulses, the differences between the numerical solutions produced by numerically solving both types of balance equations are smaller than the expansion parameter used in the perturbation procedure. These results and possible new research venues are discussed.

  2. Characterization of anomalous relaxation using the time-fractional Bloch equation and multiple echo T2 *-weighted magnetic resonance imaging at 7 T.

    Science.gov (United States)

    Qin, Shanlin; Liu, Fawang; Turner, Ian W; Yu, Qiang; Yang, Qianqian; Vegh, Viktor

    2017-04-01

    To study the utility of fractional calculus in modeling gradient-recalled echo MRI signal decay in the normal human brain. We solved analytically the extended time-fractional Bloch equations resulting in five model parameters, namely, the amplitude, relaxation rate, order of the time-fractional derivative, frequency shift, and constant offset. Voxel-level temporal fitting of the MRI signal was performed using the classical monoexponential model, a previously developed anomalous relaxation model, and using our extended time-fractional relaxation model. Nine brain regions segmented from multiple echo gradient-recalled echo 7 Tesla MRI data acquired from five participants were then used to investigate the characteristics of the extended time-fractional model parameters. We found that the extended time-fractional model is able to fit the experimental data with smaller mean squared error than the classical monoexponential relaxation model and the anomalous relaxation model, which do not account for frequency shift. We were able to fit multiple echo time MRI data with high accuracy using the developed model. Parameters of the model likely capture information on microstructural and susceptibility-induced changes in the human brain. Magn Reson Med 77:1485-1494, 2017. © 2016 International Society for Magnetic Resonance in Medicine. © 2016 International Society for Magnetic Resonance in Medicine.

  3. Quantum Mechanical Balance Equation Approach to Semiconductor Device Simulation

    National Research Council Canada - National Science Library

    Cui, Long

    1997-01-01

    This research project was focused on the development of a quantum mechanical balance equation based device simulator that can model advanced, compound, submicron devices, under all transport conditions...

  4. Carrier-carrier relaxation kinetics in quantum well semiconductor structures with nonparabolic energy bands

    DEFF Research Database (Denmark)

    Dery, H.; Tromborg, Bjarne; Eisenstein, G.

    2003-01-01

    We describe carrier-carrier scattering dynamics in an inverted quantum well structure including the nonparabolic nature of the valance band. A solution of the semiconductor Bloch equations yields strong evidence to a large change in the temporal evolution of the carrier distributions compared to ...

  5. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  6. Experimental and theoretical investigations of photocurrents in non-centrosymmetric semiconductor quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Duc, Huynh Thanh; Foerstner, Jens; Meier, Torsten [Department of Physics and CeOPP, University Paderborn (Germany); Priyadarshi, Shekar; Racu, Ana Maria; Pierz, Klaus; Siegner, Uwe; Bieler, Mark [Physikalisch-Technische Bundesanstalt, Braunschweig (Germany)

    2010-07-01

    We compute photocurrents generated by femtosecond single-color laser pulses in non-centrosymmetric semiconductor quantum wells by combining a 14 x 14 k.p band structure theory with multi-band semiconductor Bloch equations. The transient photocurrents are investigated experimentally by measuring the associated Terahertz emission. The dependencies of the photocurrent and the Terahertz emission on the excitation conditions are discussed for (110)-oriented GaAs quantum wells. The comparison between theory and experiment shows a good agreement.

  7. Delay differential equations for mode-locked semiconductor lasers.

    Science.gov (United States)

    Vladimirov, Andrei G; Turaev, Dmitry; Kozyreff, Gregory

    2004-06-01

    We propose a new model for passive mode locking that is a set of ordinary delay differential equations. We assume a ring-cavity geometry and Lorentzian spectral filtering of the pulses but do not use small gain and loss and weak saturation approximations. By means of a continuation method, we study mode-locking solutions and their stability. We find that stable mode locking can exist even when the nonlasing state between pulses becomes unstable.

  8. Extended rate equations

    International Nuclear Information System (INIS)

    Shore, B.W.

    1981-01-01

    The equations of motion are discussed which describe time dependent population flows in an N-level system, reviewing the relationship between incoherent (rate) equations, coherent (Schrodinger) equations, and more general partially coherent (Bloch) equations. Approximations are discussed which replace the elaborate Bloch equations by simpler rate equations whose coefficients incorporate long-time consequences of coherence

  9. Semiconductor device simulation by a new method of solving poisson, Laplace and Schrodinger equations

    International Nuclear Information System (INIS)

    Sharifi, M. J.; Adibi, A.

    2000-01-01

    In this paper, we have extended and completed our previous work, that was introducing a new method for finite differentiation. We show the applicability of the method for solving a wide variety of equations such as poisson, Laplace and Schrodinger. These equations are fundamental to the most semiconductor device simulators. In a section, we solve the Shordinger equation by this method in several cases including the problem of finding electron concentration profile in the channel of a HEMT. In another section, we solve the Poisson equation by this method, choosing the problem of SBD as an example. Finally we solve the Laplace equation in two dimensions and as an example, we focus on the VED. In this paper, we have shown that, the method can get stable and precise results in solving all of these problems. Also the programs which have been written based on this method become considerably faster, more clear, and more abstract

  10. Bloch electrons in 2D periodic electric and magnetic fields; Bloch-Elektronen in 2D periodischen elektrischen und magnetischen Feldern

    Energy Technology Data Exchange (ETDEWEB)

    Naundorf, B.

    2001-06-01

    The following topics were dealt with: electrons in periodic potentials, Bloch states, Landau states, wave packets, Harper equation, uncoupled Landau band states, matrix elements and matrix equations, periodic electric and magnetic fields (WL)

  11. Quantum anomalous Bloch-Siegert shift in Weyl semimetal

    Science.gov (United States)

    Kumar, Upendra; Kumar, Vipin; Enamullah, Setlur, Girish S.

    2018-05-01

    A periodic exchange of energy between the light field and two level system is known as Rabi oscillations. The Bloch-Siegert shift (BSS) is a shift in Rabi oscillation resonance condition, when the driving field is sufficiently strong. There are new type of oscillations exhibit in Weyl semimetal at far from resonance, known as anomalous Rabi oscillation. In this work, we study the phenomenon of the Bloch-Siegert shift in Weyl semimetal at far from resonance called anomalous Bloch-Siegert shift (ABSS) by purely quantum mechanical treatment and describe it's anisotropic nature. A fully numerical solution of the Floquet-Bloch equations unequivocally establishes the presence of not only anomalous Rabi oscillations in these systems but also their massless character.

  12. Finite-element discretization of 3D energy-transport equations for semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gadau, Stephan

    2007-07-01

    In this thesis a mathematical model was derived that describes the charge and energy transport in semiconductor devices like transistors. Moreover, numerical simulations of these physical processes are performed. In order to accomplish this, methods of theoretical physics, functional analysis, numerical mathematics and computer programming are applied. After an introduction to the status quo of semiconductor device simulation methods and a brief review of historical facts up to now, the attention is shifted to the construction of a model, which serves as the basis of the subsequent derivations in the thesis. Thereby the starting point is an important equation of the theory of dilute gases. From this equation the model equations are derived and specified by means of a series expansion method. This is done in a multi-stage derivation process, which is mainly taken from a scientific paper and which does not constitute the focus of this thesis. In the following phase we specify the mathematical setting and make precise the model assumptions. Thereby we make use of methods of functional analysis. Since the equations we deal with are coupled, we are concerned with a nonstandard problem. In contrary, the theory of scalar elliptic equations is established meanwhile. Subsequently, we are preoccupied with the numerical discretization of the equations. A special finite-element method is used for the discretization. This special approach has to be done in order to make the numerical results appropriate for practical application. By a series of transformations from the discrete model we derive a system of algebraic equations that are eligible for numerical evaluation. Using self-made computer programs we solve the equations to get approximate solutions. These programs are based on new and specialized iteration procedures that are developed and thoroughly tested within the frame of this research work. Due to their importance and their novel status, they are explained and

  13. Variational principle for the Bloch unified reaction theory

    International Nuclear Information System (INIS)

    MacDonald, W.; Rapheal, R.

    1975-01-01

    The unified reaction theory formulated by Claude Bloch uses a boundary value operator to write the Schroedinger equation for a scattering state as an inhomogeneous equation over the interaction region. As suggested by Lane and Robson, this equation can be solved by using a matrix representation on any set which is complete over the interaction volume. Lane and Robson have proposed, however, that a variational form of the Bloch equation can be used to obtain a ''best'' value for the S-matrix when a finite subset of this basis is used. The variational principle suggested by Lane and Robson, which gives a many-channel S-matrix different from the matrix solution on a finite basis, is considered first, and it is shown that the difference results from the fact that their variational principle is not, in fact, equivalent to the Bloch equation. Then a variational principle is presented which is fully equivalent to the Bloch form of the Schroedinger equation, and it is shown that the resulting S-matrix is the same as that obtained from the matrix solution of this equation. (U.S.)

  14. Ultrafast dynamics of laser-pulse excited semiconductors: non-Markovian quantum kinetic equations with nonequilibrium correlations

    Directory of Open Access Journals (Sweden)

    V.V.Ignatyuk

    2004-01-01

    Full Text Available Non-Markovian kinetic equations in the second Born approximation are derived for a two-zone semiconductor excited by a short laser pulse. Both collision dynamics and running nonequilibrium correlations are taken into consideration. The energy balance and relaxation of the system to equilibrium are discussed. Results of numerical solution of the kinetic equations for carriers and phonons are presented.

  15. The discretized Schroedinger equation and simple models for semiconductor quantum wells

    International Nuclear Information System (INIS)

    Boykin, Timothy B; Klimeck, Gerhard

    2004-01-01

    The discretized Schroedinger equation is one of the most commonly employed methods for solving one-dimensional quantum mechanics problems on the computer, yet many of its characteristics remain poorly understood. The differences with the continuous Schroedinger equation are generally viewed as shortcomings of the discrete model and are typically described in purely mathematical terms. This is unfortunate since the discretized equation is more productively viewed from the perspective of solid-state physics, which naturally links the discrete model to realistic semiconductor quantum wells and nanoelectronic devices. While the relationship between the discrete model and a one-dimensional tight-binding model has been known for some time, the fact that the discrete Schroedinger equation admits analytic solutions for quantum wells has gone unnoted. Here we present a solution to this new analytically solvable problem. We show that the differences between the discrete and continuous models are due to their fundamentally different bandstructures, and present evidence for our belief that the discrete model is the more physically reasonable one

  16. Mode-Locking in Broad-Area Semiconductor Lasers Enhanced by Picosecond-Pulse Injection

    OpenAIRE

    Kaiser, J; Fischer, I; Elsasser, W; Gehrig, E; Hess, O

    2004-01-01

    We present combined experimental and theoretical investigations of the picosecond emission dynamics of broad-area semiconductor lasers (BALs). We enhance the weak longitudinal self-mode-locking that is inherent to BALs by injecting a single optical 50-ps pulse, which triggers the output of a distinct regular train of 13-ps pulses. Modeling based on multimode Maxwell-Bloch equations illustrates how the dynamic interaction of the injected pulse with the internal laser field efficiently couples ...

  17. Rate equation analysis and non-Hermiticity in coupled semiconductor laser arrays

    Science.gov (United States)

    Gao, Zihe; Johnson, Matthew T.; Choquette, Kent D.

    2018-05-01

    Optically coupled semiconductor laser arrays are described by coupled rate equations. The coupled mode equations and carrier densities are included in the analysis, which inherently incorporate the carrier-induced nonlinearities including gain saturation and amplitude-phase coupling. We solve the steady-state coupled rate equations and consider the cavity frequency detuning and the individual laser pump rates as the experimentally controlled variables. We show that the carrier-induced nonlinearities play a critical role in the mode control, and we identify gain contrast induced by cavity frequency detuning as a unique mechanism for mode control. Photon-mediated energy transfer between cavities is also discussed. Parity-time symmetry and exceptional points in this system are studied. Unbroken parity-time symmetry can be achieved by judiciously combining cavity detuning and unequal pump rates, while broken symmetry lies on the boundary of the optical locking region. Exceptional points are identified at the intersection between broken symmetry and unbroken parity-time symmetry.

  18. Finite difference discretization of semiconductor drift-diffusion equations for nanowire solar cells

    Science.gov (United States)

    Deinega, Alexei; John, Sajeev

    2012-10-01

    We introduce a finite difference discretization of semiconductor drift-diffusion equations using cylindrical partial waves. It can be applied to describe the photo-generated current in radial pn-junction nanowire solar cells. We demonstrate that the cylindrically symmetric (l=0) partial wave accurately describes the electronic response of a square lattice of silicon nanowires at normal incidence. We investigate the accuracy of our discretization scheme by using different mesh resolution along the radial direction r and compare with 3D (x, y, z) discretization. We consider both straight nanowires and nanowires with radius modulation along the vertical axis. The charge carrier generation profile inside each nanowire is calculated using an independent finite-difference time-domain simulation.

  19. A theory of generalized Bloch oscillations

    International Nuclear Information System (INIS)

    Duggen, Lars; Lassen, Benny; Lew Yan Voon, L C; Willatzen, Morten

    2016-01-01

    Bloch oscillations of electrons are shown to occur for cases when the energy spectrum does not consist of the traditional evenly-spaced ladders and the potential gradient does not result from an external electric field. A theory of such generalized Bloch oscillations is presented and an exact calculation is given to confirm this phenomenon. Our results allow for a greater freedom of design for experimentally observing Bloch oscillations. For strongly coupled oscillator systems displaying Bloch oscillations, it is further demonstrated that reordering of oscillators leads to destruction of Bloch oscillations. We stipulate that the presented theory of generalized Bloch oscillations can be extended to other systems such as acoustics and photonics. (paper)

  20. Myocardial T1 mapping at 3.0 tesla using an inversion recovery spoiled gradient echo readout and bloch equation simulation with slice profile correction (BLESSPC) T1 estimation algorithm.

    Science.gov (United States)

    Shao, Jiaxin; Rapacchi, Stanislas; Nguyen, Kim-Lien; Hu, Peng

    2016-02-01

    To develop an accurate and precise myocardial T1 mapping technique using an inversion recovery spoiled gradient echo readout at 3.0 Tesla (T). The modified Look-Locker inversion-recovery (MOLLI) sequence was modified to use fast low angle shot (FLASH) readout, incorporating a BLESSPC (Bloch Equation Simulation with Slice Profile Correction) T1 estimation algorithm, for accurate myocardial T1 mapping. The FLASH-MOLLI with BLESSPC fitting was compared with different approaches and sequences with regards to T1 estimation accuracy, precision and image artifact based on simulation, phantom studies, and in vivo studies of 10 healthy volunteers and three patients at 3.0 Tesla. The FLASH-MOLLI with BLESSPC fitting yields accurate T1 estimation (average error = -5.4 ± 15.1 ms, percentage error = -0.5% ± 1.2%) for T1 from 236-1852 ms and heart rate from 40-100 bpm in phantom studies. The FLASH-MOLLI sequence prevented off-resonance artifacts in all 10 healthy volunteers at 3.0T. In vivo, there was no significant difference between FLASH-MOLLI-derived myocardial T1 values and "ShMOLLI+IE" derived values (1458.9 ± 20.9 ms versus 1464.1 ± 6.8 ms, P = 0.50); However, the average precision by FLASH-MOLLI was significantly better than that generated by "ShMOLLI+IE" (1.84 ± 0.36% variance versus 3.57 ± 0.94%, P < 0.001). The FLASH-MOLLI with BLESSPC fitting yields accurate and precise T1 estimation, and eliminates banding artifacts associated with bSSFP at 3.0T. © 2015 Wiley Periodicals, Inc.

  1. Felix Bloch (1905–1983)

    Indian Academy of Sciences (India)

    IAS Admin

    1905, to Jewish parents, Gustav and Agnes Bloch. The year he ... Both the student and the supervisor were in their 20's, separated by 5– ... up on the West Coast, in the University of Stanford, where he stayed for the rest of his academic life.

  2. A theory of generalized Bloch oscillations

    DEFF Research Database (Denmark)

    Duggen, Lars; Lew Yan Voon, L. C.; Lassen, Benny

    2016-01-01

    Bloch oscillations of electrons are shown to occur for cases when the energy spectrum does not consist of the traditional evenly-spaced ladders and the potential gradient does not result from an external electric field. A theory of such generalized Bloch oscillations is presented and an exact...... oscillations. We stipulate that the presented theory of generalized Bloch oscillations can be extended to other systems such as acoustics and photonics....

  3. Bloch-wave engineered submicron-diameter quantum-dot micropillars for cavity QED experiments

    DEFF Research Database (Denmark)

    Gregersen, Niels; Lermer, Matthias; Reitzenstein, Stephan

    2013-01-01

    The semiconductor micropillar is attractive for cavity QED experiments. For strong coupling, the figure of merit is proportional to Q/√V, and a design combining a high Q and a low mode volume V is thus desired. However, for the standard submicron diameter design, poor mode matching between the ca...... the cavity and the DBR Bloch mode limits the Q. We present a novel adiabatic design where Bloch-wave engineering is employed to improve the mode matching, allowing the demonstration of a record-high vacuum Rabi splitting of 85 μeV and a Q of 13600 for a 850 nm diameter micropillar....

  4. Electric dipoles on the Bloch sphere

    OpenAIRE

    Vutha, Amar C.

    2014-01-01

    The time evolution of a two-level quantum mechanical system can be geometrically described using the Bloch sphere. By mapping the Bloch sphere evolution onto the dynamics of oscillating electric dipoles, we provide a physically intuitive link between classical electromagnetism and the electric dipole transitions of atomic & molecular physics.

  5. Electric dipoles on the Bloch sphere

    International Nuclear Information System (INIS)

    Vutha, Amar C

    2015-01-01

    The time evolution of a two-level quantum mechanical system can be geometrically described using the Bloch sphere. By mapping the Bloch sphere evolution onto the dynamics of oscillating electric dipoles, we provide a physically intuitive link between classical electromagnetism and the electric dipole transitions of atomic and molecular physics. (paper)

  6. Impact of slow-light enhancement on optical propagation in active semiconductor photonic crystal waveguides

    DEFF Research Database (Denmark)

    Chen, Yaohui; de Lasson, Jakob Rosenkrantz; Gregersen, Niels

    2015-01-01

    We derive and validate a set of coupled Bloch wave equations for analyzing the reflection and transmission properties of active semiconductor photonic crystal waveguides. In such devices, slow-light propagation can be used to enhance the material gain per unit length, enabling, for example......, the realization of short optical amplifiers compatible with photonic integration. The coupled wave analysis is compared to numerical approaches based on the Fourier modal method and a frequency domain finite element technique. The presence of material gain leads to the build-up of a backscattered field, which...... is interpreted as distributed feedback effects or reflection at passive-active interfaces, depending on the approach taken. For very large material gain values, the band structure of the waveguide is perturbed, and deviations from the simple coupled Bloch wave model are found....

  7. Behaviour of neutrons passing through the Bloch wall

    International Nuclear Information System (INIS)

    Schaerpf, O.

    1976-01-01

    In part I of the present paper the pertinent knowledge about Bloch walls is presented and developed insofar as it appears necessary for the experiments with neutrons, that is to say the direction of magnetization within the domains, the calculation of the variation of magnetization in the wall, the wall thickness, and the zigzag structure of the Bloch wall. In part II it is first clarified why the Bloch wall can be treated as a continuum problem. It shows that this is possible far away from Laue reflexes. For angles far away from Laure-reflex angles the interaction of the periodic structure of the magnetization can be described with the aid of an averaged magnetic flux density. The consequence of it is the possibility of treating the problem by means of a Schroedinger equation with continous interaction. This leads to a law of refraction. The question of the possibilities for explaining the intensity behavior is treated in part III. This part, from different aspects, describes the fact, which already was pointed out in Schaerpf, O., Vehoff, H., Schwink, Ch. 1973, that the spin of the neutrons in passing through the wall is partly taken along by the magnetization gradually rotating in the wall. (orig./WBU) [de

  8. Effective equations for the precession dynamics of electron spins and electron–impurity correlations in diluted magnetic semiconductors

    International Nuclear Information System (INIS)

    Cygorek, M; Axt, V M

    2015-01-01

    Starting from a quantum kinetic theory for the spin dynamics in diluted magnetic semiconductors, we derive simplified equations that effectively describe the spin transfer between carriers and magnetic impurities for an arbitrary initial impurity magnetization. Taking the Markov limit of these effective equations, we obtain good quantitative agreement with the full quantum kinetic theory for the spin dynamics in bulk systems at high magnetic doping. In contrast, the standard rate description where the carrier–dopant interaction is treated according to Fermi’s golden rule, which involves the assumption of a short memory as well as a perturbative argument, has been shown previously to fail if the impurity magnetization is non-zero. The Markov limit of the effective equations is derived, assuming only a short memory, while higher order terms are still accounted for. These higher order terms represent the precession of the carrier–dopant correlations in the effective magnetic field due to the impurity spins. Numerical calculations show that the Markov limit of our effective equations reproduces the results of the full quantum kinetic theory very well. Furthermore, this limit allows for analytical solutions and for a physically transparent interpretation. (paper)

  9. Bloch walls in a nickel single crystal

    International Nuclear Information System (INIS)

    Peters, J.; Treimer, W.

    2001-01-01

    We present a consistent theory for the dependence of the magnetic structure in bulk samples on external static magnetic fields and corresponding experimental results. We applied the theory of micromagnetism to this crystal and calculated the Bloch wall thickness as a function of external magnetic fields. The theoretical results agree well with the experimental data, so that the Bloch wall thickness of a 71 deg. nickel single crystal was definitely determined with some hundred of nanometer

  10. Bloch-Kohn and Wannier-Kohn functions in one dimension

    International Nuclear Information System (INIS)

    Bruno-Alfonso, Alexys; Guo-Qiang, Hai

    2003-01-01

    Bloch and Wannier functions of the Kohn type for a quite general one-dimensional Hamiltonian with inversion symmetry are studied. Important clarifications on null minigaps and the symmetry of those functions are given, with emphasis on the Kronig-Penney model. The lack of a general selection rule on the miniband index for optical transitions between edge states in semiconductor superlattices is discussed. A direct method for the calculation of Wannier-Kohn functions is presented

  11. Magnetoresistance in organic semiconductors: Including pair correlations in the kinetic equations for hopping transport

    Science.gov (United States)

    Shumilin, A. V.; Kabanov, V. V.; Dediu, V. I.

    2018-03-01

    We derive kinetic equations for polaron hopping in organic materials that explicitly take into account the double occupation possibility and pair intersite correlations. The equations include simplified phenomenological spin dynamics and provide a self-consistent framework for the description of the bipolaron mechanism of the organic magnetoresistance. At low applied voltages, the equations can be reduced to those for an effective resistor network that generalizes the Miller-Abrahams network and includes the effect of spin relaxation on the system resistivity. Our theory discloses the close relationship between the organic magnetoresistance and the intersite correlations. Moreover, in the absence of correlations, as in an ordered system with zero Hubbard energy, the magnetoresistance vanishes.

  12. Self-consistent Maxwell-Bloch theory of quantum-dot-population switching in photonic crystals

    International Nuclear Information System (INIS)

    Takeda, Hiroyuki; John, Sajeev

    2011-01-01

    We theoretically demonstrate the population switching of quantum dots (QD's), modeled as two-level atoms in idealized one-dimensional (1D) and two-dimensional (2D) photonic crystals (PC's) by self-consistent solution of the Maxwell-Bloch equations. In our semiclassical theory, energy states of the electron are quantized, and electron dynamics is described by the atomic Bloch equation, while electromagnetic waves satisfy the classical Maxwell equations. Near a waveguide cutoff in a photonic band gap, the local electromagnetic density of states (LDOS) and spontaneous emission rates exhibit abrupt changes with frequency, enabling large QD population inversion driven by both continuous and pulsed optical fields. We recapture and generalize this ultrafast population switching using the Maxwell-Bloch equations. Radiative emission from the QD is obtained directly from the surrounding PC geometry using finite-difference time-domain simulation of the electromagnetic field. The atomic Bloch equations provide a source term for the electromagnetic field. The total electromagnetic field, consisting of the external input and radiated field, drives the polarization components of the atomic Bloch vector. We also include a microscopic model for phonon dephasing of the atomic polarization and nonradiative decay caused by damped phonons. Our self-consistent theory captures stimulated emission and coherent feedback effects of the atomic Mollow sidebands, neglected in earlier treatments. This leads to remarkable high-contrast QD-population switching with relatively modest (factor of 10) jump discontinuities in the electromagnetic LDOS. Switching is demonstrated in three separate models of QD's placed (i) in the vicinity of a band edge of a 1D PC, (ii) near a cutoff frequency in a bimodal waveguide channel of a 2D PC, and (iii) in the vicinity of a localized defect mode side coupled to a single-mode waveguide channel in a 2D PC.

  13. Computational and analytical comparison of flux discretizations for the semiconductor device equations beyond Boltzmann statistics

    International Nuclear Information System (INIS)

    Farrell, Patricio; Koprucki, Thomas; Fuhrmann, Jürgen

    2017-01-01

    We compare three thermodynamically consistent numerical fluxes known in the literature, appearing in a Voronoï finite volume discretization of the van Roosbroeck system with general charge carrier statistics. Our discussion includes an extension of the Scharfetter–Gummel scheme to non-Boltzmann (e.g. Fermi–Dirac) statistics. It is based on the analytical solution of a two-point boundary value problem obtained by projecting the continuous differential equation onto the interval between neighboring collocation points. Hence, it serves as a reference flux. The exact solution of the boundary value problem can be approximated by computationally cheaper fluxes which modify certain physical quantities. One alternative scheme averages the nonlinear diffusion (caused by the non-Boltzmann nature of the problem), another one modifies the effective density of states. To study the differences between these three schemes, we analyze the Taylor expansions, derive an error estimate, visualize the flux error and show how the schemes perform for a carefully designed p-i-n benchmark simulation. We present strong evidence that the flux discretization based on averaging the nonlinear diffusion has an edge over the scheme based on modifying the effective density of states.

  14. Computational and analytical comparison of flux discretizations for the semiconductor device equations beyond Boltzmann statistics

    Science.gov (United States)

    Farrell, Patricio; Koprucki, Thomas; Fuhrmann, Jürgen

    2017-10-01

    We compare three thermodynamically consistent numerical fluxes known in the literature, appearing in a Voronoï finite volume discretization of the van Roosbroeck system with general charge carrier statistics. Our discussion includes an extension of the Scharfetter-Gummel scheme to non-Boltzmann (e.g. Fermi-Dirac) statistics. It is based on the analytical solution of a two-point boundary value problem obtained by projecting the continuous differential equation onto the interval between neighboring collocation points. Hence, it serves as a reference flux. The exact solution of the boundary value problem can be approximated by computationally cheaper fluxes which modify certain physical quantities. One alternative scheme averages the nonlinear diffusion (caused by the non-Boltzmann nature of the problem), another one modifies the effective density of states. To study the differences between these three schemes, we analyze the Taylor expansions, derive an error estimate, visualize the flux error and show how the schemes perform for a carefully designed p-i-n benchmark simulation. We present strong evidence that the flux discretization based on averaging the nonlinear diffusion has an edge over the scheme based on modifying the effective density of states.

  15. The basic properties of Bloch functions

    Directory of Open Access Journals (Sweden)

    Joseph A. Cima

    1979-01-01

    Full Text Available A Bloch function f(z is an analytic function on the unit disc whose derivative grows no faster than a constant times the reciprocal of the distance from z to ∂. We reprove here the basic analytic facts concerning Bloch functions. We establish the Banach space structure and collect facts concerning the geometry of the space. We indicate duality relationships, and known isomorphic correspondences are given. We give a rather complete list of references for further study in the case of several variables.

  16. On history and salvation in Emmanuel Levinas and Ernst Bloch

    African Journals Online (AJOL)

    p1243322

    “Chronos” who devours his own children.13 In addition to this, one would invert ... death” against Bloch, one could argue that Bloch, in effect, is glorifying death .... fantasy or wishful thinking) to Bloch's belief that in a humanised world the.

  17. Nonlinear Bloch waves in metallic photonic band-gap filaments

    International Nuclear Information System (INIS)

    Kaso, Artan; John, Sajeev

    2007-01-01

    We demonstrate the occurrence of nonlinear Bloch waves in metallic photonic crystals (PCs). These periodically structured filaments are characterized by an isolated optical pass band below an effective plasma gap. The pass band occurs in a frequency range where the metallic filament exhibits a negative, frequency-dependent dielectric function and absorption loss. The metallic losses are counterbalanced by gain in two models of inhomogeneously broadened nonlinear oscillators. In the first model, we consider close-packed quantum dots that fill the void regions of a two-dimensional (2D) metallic PC, and whose inhomogeneously broadened emission spectrum spans the original optical pass band of the bare filament. In the second model, we consider thin (10-50 nm) layers of inhomogeneously broadened two-level resonators, with large dipole oscillator strength, that cover the interior surfaces of 2D metallic (silver and tungsten) PCs. These may arise from localized surface plasmon resonances due to small metal particles or an otherwise rough metal surface. For simplicity, we treat electromagnetic modes with electric field perpendicular to the plane of metal periodicity. In both models, a pumping threshold of the resonators is found, above which periodic nonlinear solutions of Maxwell's equations with purely real frequency within the optical pass band emerge. These nonlinear Bloch waves exhibit a laserlike input pumping to output amplitude characteristic. For strong surface resonances, these nonlinear waves may play a role in light emission from a hot tungsten (suitably microstructured) filament

  18. Nonlinear Bloch waves in metallic photonic band-gap filaments

    Science.gov (United States)

    Kaso, Artan; John, Sajeev

    2007-11-01

    We demonstrate the occurrence of nonlinear Bloch waves in metallic photonic crystals (PCs). These periodically structured filaments are characterized by an isolated optical pass band below an effective plasma gap. The pass band occurs in a frequency range where the metallic filament exhibits a negative, frequency-dependent dielectric function and absorption loss. The metallic losses are counterbalanced by gain in two models of inhomogeneously broadened nonlinear oscillators. In the first model, we consider close-packed quantum dots that fill the void regions of a two-dimensional (2D) metallic PC, and whose inhomogeneously broadened emission spectrum spans the original optical pass band of the bare filament. In the second model, we consider thin (10 50 nm) layers of inhomogeneously broadened two-level resonators, with large dipole oscillator strength, that cover the interior surfaces of 2D metallic (silver and tungsten) PCs. These may arise from localized surface plasmon resonances due to small metal particles or an otherwise rough metal surface. For simplicity, we treat electromagnetic modes with electric field perpendicular to the plane of metal periodicity. In both models, a pumping threshold of the resonators is found, above which periodic nonlinear solutions of Maxwell’s equations with purely real frequency within the optical pass band emerge. These nonlinear Bloch waves exhibit a laserlike input pumping to output amplitude characteristic. For strong surface resonances, these nonlinear waves may play a role in light emission from a hot tungsten (suitably microstructured) filament.

  19. Reve et action: Bloch, Heidegger et Levinas

    Czech Academy of Sciences Publication Activity Database

    Bierhanzl, Jan

    2016-01-01

    Roč. 12, č. 3 (2016), s. 1-6 ISSN 1336-6556 R&D Projects: GA ČR(CZ) GA16-23046S Institutional support: RVO:67985955 Keywords : possibility * wishing * decision * action * dream * utopia Subject RIV: AA - Philosophy ; Religion http://www.ostium.sk/sk/r%C8%87ve-er-action-bloch-heidegger-et-levinas/

  20. All-optical 1st- and 2nd-order differential equation solvers with large tuning ranges using Fabry-Pérot semiconductor optical amplifiers.

    Science.gov (United States)

    Chen, Kaisheng; Hou, Jie; Huang, Zhuyang; Cao, Tong; Zhang, Jihua; Yu, Yuan; Zhang, Xinliang

    2015-02-09

    We experimentally demonstrate an all-optical temporal computation scheme for solving 1st- and 2nd-order linear ordinary differential equations (ODEs) with tunable constant coefficients by using Fabry-Pérot semiconductor optical amplifiers (FP-SOAs). By changing the injection currents of FP-SOAs, the constant coefficients of the differential equations are practically tuned. A quite large constant coefficient tunable range from 0.0026/ps to 0.085/ps is achieved for the 1st-order differential equation. Moreover, the constant coefficient p of the 2nd-order ODE solver can be continuously tuned from 0.0216/ps to 0.158/ps, correspondingly with the constant coefficient q varying from 0.0000494/ps(2) to 0.006205/ps(2). Additionally, a theoretical model that combining the carrier density rate equation of the semiconductor optical amplifier (SOA) with the transfer function of the Fabry-Pérot (FP) cavity is exploited to analyze the solving processes. For both 1st- and 2nd-order solvers, excellent agreements between the numerical simulations and the experimental results are obtained. The FP-SOAs based all-optical differential-equation solvers can be easily integrated with other optical components based on InP/InGaAsP materials, such as laser, modulator, photodetector and waveguide, which can motivate the realization of the complicated optical computing on a single integrated chip.

  1. A 2D multi-term time and space fractional Bloch-Torrey model based on bilinear rectangular finite elements

    Science.gov (United States)

    Qin, Shanlin; Liu, Fawang; Turner, Ian W.

    2018-03-01

    The consideration of diffusion processes in magnetic resonance imaging (MRI) signal attenuation is classically described by the Bloch-Torrey equation. However, many recent works highlight the distinct deviation in MRI signal decay due to anomalous diffusion, which motivates the fractional order generalization of the Bloch-Torrey equation. In this work, we study the two-dimensional multi-term time and space fractional diffusion equation generalized from the time and space fractional Bloch-Torrey equation. By using the Galerkin finite element method with a structured mesh consisting of rectangular elements to discretize in space and the L1 approximation of the Caputo fractional derivative in time, a fully discrete numerical scheme is derived. A rigorous analysis of stability and error estimation is provided. Numerical experiments in the square and L-shaped domains are performed to give an insight into the efficiency and reliability of our method. Then the scheme is applied to solve the multi-term time and space fractional Bloch-Torrey equation, which shows that the extra time derivative terms impact the relaxation process.

  2. The Bloch Approximation in Periodically Perforated Media

    International Nuclear Information System (INIS)

    Conca, C.; Gomez, D.; Lobo, M.; Perez, E.

    2005-01-01

    We consider a periodically heterogeneous and perforated medium filling an open domain Ω of R N . Assuming that the size of the periodicity of the structure and of the holes is O(ε),we study the asymptotic behavior, as ε → 0, of the solution of an elliptic boundary value problem with strongly oscillating coefficients posed in Ω ε (Ω ε being Ω minus the holes) with a Neumann condition on the boundary of the holes. We use Bloch wave decomposition to introduce an approximation of the solution in the energy norm which can be computed from the homogenized solution and the first Bloch eigenfunction. We first consider the case where Ωis R N and then localize the problem for abounded domain Ω, considering a homogeneous Dirichlet condition on the boundary of Ω

  3. Taking a peek at Bloch oscillations

    Science.gov (United States)

    Morsch, Oliver

    2016-11-01

    Bloch oscillations arise when matter waves inside a periodic potential, such as a crystal lattice, are accelerated by a constant force. Keßler et al (2016 New J. Phys. 18 102001) have now experimentally tested a method that allows one to observe those oscillations continuously, without a destructive measurement on the matter wave. Their approach could help to make cold atom-based accelerometers and gravimeters more precise.

  4. Modeling Bloch oscillations in nanoscale Josephson junctions

    Science.gov (United States)

    Vora, Heli; Kautz, R. L.; Nam, S. W.; Aumentado, J.

    2018-01-01

    Bloch oscillations in nanoscale Josephson junctions with a Coulomb charging energy comparable to the Josephson coupling energy are explored within the context of a model previously considered by Geigenmüller and Schön that includes Zener tunneling and treats quasiparticle tunneling as an explicit shot-noise process. The dynamics of the junction quasicharge are investigated numerically using both Monte Carlo and ensemble approaches to calculate voltage-current characteristics in the presence of microwaves. We examine in detail the origin of harmonic and subharmonic Bloch steps at dc biases I = (n/m)2ef induced by microwaves of frequency f and consider the optimum parameters for the observation of harmonic (m = 1) steps. We also demonstrate that the GS model allows a detailed semiquantitative fit to experimental voltage-current characteristics previously obtained at the Chalmers University of Technology, confirming and strengthening the interpretation of the observed microwave-induced steps in terms of Bloch oscillations. PMID:29577106

  5. The Bloch wave operator: generalizations and applications: Part I. The time-independent case

    CERN Document Server

    Killingbeck, J P

    2003-01-01

    This is part 1 of a two-part review on wave operator theory and methods. The basic theory of the time-independent wave operator is presented in terms of partitioned matrix theory for the benefit of general readers, with a discussion of the links between the matrix and projection operator approaches. The matrix approach is shown to lead to simple derivations of the wave operators and effective Hamiltonians of Loewdin, Bloch, Des Cloizeaux and Kato as well as to some associated variational forms. The principal approach used throughout stresses the solution of the nonlinear equation for the reduced wave operator, leading to the construction of the effective Hamiltonians of Bloch and of Des Cloizeaux. Several mathematical techniques which are useful in implementing this approach are explained, some of them being relatively little known in the area of wave operator calculations. The theoretical discussion is accompanied by several specimen numerical calculations which apply the described techniques to a selection ...

  6. Composition operators between Bloch type spaces and Zygmund ...

    Indian Academy of Sciences (India)

    MS received 1 September 2009; revised 31 March 2011. Abstract. The boundedness and compactness of composition operators between. Bloch type spaces and Zygmund spaces of holomorphic functions in the unit ball are characterized in the paper. Keywords. Composition operator; Bloch type space; Zygmund space. 1.

  7. Bloch-mode analysis for retrieving effective parameters of metamaterials

    DEFF Research Database (Denmark)

    Andryieuski, Andrei; Ha, Sangwoo; Sukhorukov, Andrey A.

    2012-01-01

    by our method with a high accuracy. We employ both surface and volume averaging of the electromagnetic fields of the dominating (fundamental) Bloch modes to determine the Bloch and wave impedances, respectively. We discuss how this method works for several characteristic examples, and demonstrate...

  8. Quantum dynamical phenomena of independent electrons in semiconductor superlattices subject to a uniform electric field

    International Nuclear Information System (INIS)

    Bouchard, A.M.

    1994-01-01

    This report discusses the following topics: Bloch oscillations and other dynamical phenomena of electrons in semiconductor superlattices; solvable dynamical model of an electron in a one-dimensional aperiodic lattice subject to a uniform electric field; and quantum dynamical phenomena of electrons in aperiodic semiconductor superlattices

  9. Designing non-Hermitian dynamics for conservative state evolution on the Bloch sphere

    Science.gov (United States)

    Yu, Sunkyu; Piao, Xianji; Park, Namkyoo

    2018-03-01

    An evolution on the Bloch sphere is the fundamental state transition, including optical polarization controls and qubit operations. Conventional evolution of a polarization state or qubit is implemented within a closed system that automatically satisfies energy conservation from the Hermitian formalism. Although particular forms of static non-Hermitian Hamiltonians, such as parity-time-symmetric Hamiltonians, allow conservative states in an open system, the criteria for the energy conservation in a dynamical open system have not been fully explored. Here, we derive the condition of conservative state evolution in open-system dynamics and its inverse design method, by developing the non-Hermitian modification of the Larmor precession equation. We show that the geometrically designed locus on the Bloch sphere can be realized by different forms of dynamics, leading to the isolocus family of non-Hermitian dynamics. This increased degree of freedom allows the complementary phenomena of error-robust and highly sensitive evolutions on the Bloch sphere, which could be applicable to stable polarizers, quantum gates, and optimized sensors in dynamical open systems.

  10. Vacuum Bloch-Siegert shift in Landau polaritons with ultra-high cooperativity

    Science.gov (United States)

    Li, Xinwei; Bamba, Motoaki; Zhang, Qi; Fallahi, Saeed; Gardner, Geoff C.; Gao, Weilu; Lou, Minhan; Yoshioka, Katsumasa; Manfra, Michael J.; Kono, Junichiro

    2018-06-01

    A two-level system resonantly interacting with an a.c. magnetic or electric field constitutes the physical basis of diverse phenomena and technologies. However, Schrödinger's equation for this seemingly simple system can be solved exactly only under the rotating-wave approximation, which neglects the counter-rotating field component. When the a.c. field is sufficiently strong, this approximation fails, leading to a resonance-frequency shift known as the Bloch-Siegert shift. Here, we report the vacuum Bloch-Siegert shift, which is induced by the ultra-strong coupling of matter with the counter-rotating component of the vacuum fluctuation field in a cavity. Specifically, an ultra-high-mobility two-dimensional electron gas inside a high-Q terahertz cavity in a quantizing magnetic field revealed ultra-narrow Landau polaritons, which exhibited a vacuum Bloch-Siegert shift up to 40 GHz. This shift, clearly distinguishable from the photon-field self-interaction effect, represents a unique manifestation of a strong-field phenomenon without a strong field.

  11. Spin wave vortex from the scattering on Bloch point solitons

    Energy Technology Data Exchange (ETDEWEB)

    Carvalho-Santos, V.L., E-mail: vagson.carvalho@usach.cl [Instituto Federal de Educação, Ciência e Tecnologia Baiano - Campus Senhor do Bonfim, Km 04 Estrada da Igara, 48970-000 Senhor do Bonfim, Bahia (Brazil); Departamento de Física, Universidad de Santiago de Chile and CEDENNA, Avda. Ecuador 3493, Santiago (Chile); Elías, R.G., E-mail: gabriel.elias@usach.cl [Departamento de Física, Universidad de Santiago de Chile and CEDENNA, Avda. Ecuador 3493, Santiago (Chile); Nunez, A.S., E-mail: alnunez@dfi.uchile.cl [Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Casilla 487-3, Santiago (Chile)

    2015-12-15

    The interaction of a spin wave with a stationary Bloch point is studied. The topological non-trivial structure of the Bloch point manifests in the propagation of spin waves endowing them with a gauge potential that resembles the one associated with the interaction of a magnetic monopole and an electron. By pursuing this analogy, we are led to the conclusion that the scattering of spin waves and Bloch points is accompanied by the creation of a magnon vortex. Interference between such a vortex and a plane wave leads to dislocations in the interference pattern that can be measurable by means of magnon holography.

  12. Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field

    International Nuclear Information System (INIS)

    Wang, C.; Wang, F.; Cao, J. C.

    2014-01-01

    Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation

  13. Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field.

    Science.gov (United States)

    Wang, C; Wang, F; Cao, J C

    2014-09-01

    Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation.

  14. Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Wang, C., E-mail: cwang@mail.sim.ac.cn; Wang, F.; Cao, J. C., E-mail: jccao@mail.sim.ac.cn [Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China)

    2014-09-01

    Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation.

  15. Bloch Oscillations in the Chains of Artificial Atoms Dressed with Photons

    Directory of Open Access Journals (Sweden)

    Ilay Levie

    2018-06-01

    Full Text Available We present a model of one-dimensional chain of two-level artificial atoms driven with DC field and quantum light simultaneously in a strong coupling regime. The interaction of atoms with light leads to electron-photon entanglement (dressing of the atoms with light. The driving via dc field leads to the Bloch oscillations (BO in the chain of dressed atoms. We consider the mutual influence of dressing and BO and show that scenario of oscillations dramatically differs from predicted by the Jaynes-Cummings and Bloch-Zener models. We study the evolution of the population inversion, tunneling current, photon probability distribution, mean number of photons, and photon number variance, and show the influence of BO on the quantum-statistical characteristics of light. For example, the collapse-revivals picture and vacuum Rabi-oscillations are strongly modulated with Bloch frequency. As a result, quantum properties of light and degree of electron-photon entanglement become controllable via adiabatic dc field turning. On the other hand, the low-frequency tunneling current depends on the quantum light statistics (in particular, for coherent initial state it is modulated accordingly the collapse-revivals picture. The developed model is universal with respect to the physical origin of artificial atom and frequency range of atom-light interaction. The model is adapted to the 2D-heterostructures (THz frequencies, semiconductor quantum dots (optical range, and Josephson junctions (microwaves. The data for numerical simulations are taken from recently published experiments. The obtained results open a new way in quantum state engineering and nano-photonic spectroscopy.

  16. Skyrmion clusters from Bloch lines in ferromagnetic films

    KAUST Repository

    Garanin, Dmitry A.; Chudnovsky, Eugene M.; Zhang, Xixiang

    2017-01-01

    anisotropy, and dipole-dipole interaction. Evolution of labyrinth domains into compact topological structures on application of the magnetic field is found to be governed by the configuration of Bloch lines inside domain walls. Depending on the combination

  17. Bloch spaces of holomorphic functions in the polydisk

    Directory of Open Access Journals (Sweden)

    Anahit Harutyunyan

    2007-01-01

    Full Text Available This work is an introduction to anisotropic spaces of holomorphic functions, which have ω-weight and are generalizations of Bloch spaces to a polydisc. We prove that these classes form an algebra and are invariant with respect to monomial multiplication. Some theorems on projection and diagonal mapping are proved. We establish a description of (Ap(ω* (or (Hp(ω* via the Bloch classes for all 0

  18. Self-consistent Maxwell-Bloch model of quantum-dot photonic-crystal-cavity lasers

    DEFF Research Database (Denmark)

    Cartar, William; Mørk, Jesper; Hughes, Stephen

    2017-01-01

    -level emitters are solved numerically. Phenomenological pure dephasing and incoherent pumping is added to the optical Bloch equations to allow for a dynamical lasing regime, but the cavity-mediated radiative dynamics and gain coupling of each QD dipole (artificial atom) is contained self-consistently within......-mode to multimode lasing is also observed, depending on the spectral peak frequency of the QD ensemble. Using a statistical modal analysis of the average decay rates, we also show how the average radiative decay rate decreases as a function of cavity size. In addition, we investigate the role of structural disorder...

  19. Comparison of the Koster-Slater and the equation-of-motion method for calculation of the electronic structure of defects in compound semiconductors

    International Nuclear Information System (INIS)

    Tit, N.; Halley, J.W.

    1992-01-01

    Traditional methods of calculating the electronic structure of defects in semiconductors rely on matrix-diagonalization methods which use the unperturbed crystalline wave functions as a basis. Equation-of-motion (EOM) methods, on the other hand, give excellent results with strong disorder and many defects and make no use of the basis of unperturbed wave functions, but require self-averaging properties of the wave functions which appear superficially to make them unsuitable for study of local properties. We show here that EOM methods are better than traditional methods for calculating the electronic structure of essentially any finite-range impurity potential. The reason is basically that the numerical cost of the traditional Green's-function methods grows approximately as R 7 o/Iper sitet/P, where R is the range of the potential, whereas the cost of the EOM methods per site is independent of the range of the potential. Our detailed calculations on a model of an oxygen vacancy in rutile TiO 2 show that a crossover occurs very soon, so that equation-of-motion methods are better than the traditional ones in the case of potentials of realistic range

  20. Nonlinear tunneling of bright and dark rogue waves in combined nonlinear Schrödinger and Maxwell-Bloch systems

    Science.gov (United States)

    Raju, Thokala Soloman; Pal, Ritu

    2018-05-01

    We derive the analytical rogue wave solutions for the generalized inhomogeneous nonlinear Schrödinger-Maxwell-Bloch (GINLS-MB) equation describing the pulse propagation in erbium-doped fibre system. Then by suitably choosing the inhomogeneous parameters, we delineate the tunneling properties of rogue waves through dispersion and nonlinearity barriers or wells. Finally, we demonstrate the propagating characteristics of optical solitons by considering their tunneling through periodic barriers by the proper choice of external potential.

  1. Ultrafast dynamics of photoexcited charge and spin currents in semiconductor nanostructures

    Science.gov (United States)

    Meier, Torsten; Pasenow, Bernhard; Duc, Huynh Thanh; Vu, Quang Tuyen; Haug, Hartmut; Koch, Stephan W.

    2007-02-01

    Employing the quantum interference among one- and two-photon excitations induced by ultrashort two-color laser pulses it is possible to generate charge and spin currents in semiconductors and semiconductor nanostructures on femtosecond time scales. Here, it is reviewed how the excitation process and the dynamics of such photocurrents can be described on the basis of a microscopic many-body theory. Numerical solutions of the semiconductor Bloch equations (SBE) provide a detailed description of the time-dependent material excitations. Applied to the case of photocurrents, numerical solutions of the SBE for a two-band model including many-body correlations on the second-Born Markov level predict an enhanced damping of the spin current relative to that of the charge current. Interesting effects are obtained when the scattering processes are computed beyond the Markovian limit. Whereas the overall decay of the currents is basically correctly described already within the Markov approximation, quantum-kinetic calculations show that memory effects may lead to additional oscillatory signatures in the current transients. When transitions to coupled heavy- and light-hole valence bands are incorporated into the SBE, additional charge and spin currents, which are not described by the two-band model, appear.

  2. Modeling Bloch oscillations in ultra-small Josephson junctions

    Science.gov (United States)

    Vora, Heli; Kautz, Richard; Nam, Sae Woo; Aumentado, Jose

    In a seminal paper, Likharev et al. developed a theory for ultra-small Josephson junctions with Josephson coupling energy (Ej) less than the charging energy (Ec) and showed that such junctions demonstrate Bloch oscillations which could be used to make a fundamental current standard that is a dual of the Josephson volt standard. Here, based on the model of Geigenmüller and Schön, we numerically calculate the current-voltage relationship of such an ultra-small junction which includes various error processes present in a nanoscale Josephson junction such as random quasiparticle tunneling events and Zener tunneling between bands. This model allows us to explore the parameter space to see the effect of each process on the width and height of the Bloch step and serves as a guide to determine whether it is possible to build a quantum current standard of a metrological precision using Bloch oscillations.

  3. Weighted Composition Operators from Hardy Spaces into Logarithmic Bloch Spaces

    Directory of Open Access Journals (Sweden)

    Flavia Colonna

    2012-01-01

    Full Text Available The logarithmic Bloch space Blog⁡ is the Banach space of analytic functions on the open unit disk 𝔻 whose elements f satisfy the condition ∥f∥=sup⁡z∈𝔻(1-|z|2log⁡  (2/(1-|z|2|f'(z|<∞. In this work we characterize the bounded and the compact weighted composition operators from the Hardy space Hp (with 1≤p≤∞ into the logarithmic Bloch space. We also provide boundedness and compactness criteria for the weighted composition operator mapping Hp into the little logarithmic Bloch space defined as the subspace of Blog⁡ consisting of the functions f such that lim⁡|z|→1(1-|z|2log⁡  (2/(1-|z|2|f'(z|=0.

  4. Skyrmion clusters from Bloch lines in ferromagnetic films

    KAUST Repository

    Garanin, Dmitry A.

    2017-12-29

    Conditions under which various skyrmion objects emerge in experiments on thin magnetic films remain largely unexplained. We investigate numerically centrosymmetric spin lattices in films of finite thickness with ferromagnetic exchange, magnetic anisotropy, and dipole-dipole interaction. Evolution of labyrinth domains into compact topological structures on application of the magnetic field is found to be governed by the configuration of Bloch lines inside domain walls. Depending on the combination of Bloch lines, the magnetic domains evolve into individual skyrmions, biskyrmions, or more complex topological objects. While the geometry of such objects is sensitive to the parameters, their topological charge is uniquely determined by the topological charge of Bloch lines inside the magnetic domain from which the object emerges.

  5. Self-consistent Maxwell-Bloch model of quantum-dot photonic-crystal-cavity lasers

    Science.gov (United States)

    Cartar, William; Mørk, Jesper; Hughes, Stephen

    2017-08-01

    We present a powerful computational approach to simulate the threshold behavior of photonic-crystal quantum-dot (QD) lasers. Using a finite-difference time-domain (FDTD) technique, Maxwell-Bloch equations representing a system of thousands of statistically independent and randomly positioned two-level emitters are solved numerically. Phenomenological pure dephasing and incoherent pumping is added to the optical Bloch equations to allow for a dynamical lasing regime, but the cavity-mediated radiative dynamics and gain coupling of each QD dipole (artificial atom) is contained self-consistently within the model. These Maxwell-Bloch equations are implemented by using Lumerical's flexible material plug-in tool, which allows a user to define additional equations of motion for the nonlinear polarization. We implement the gain ensemble within triangular-lattice photonic-crystal cavities of various length N (where N refers to the number of missing holes), and investigate the cavity mode characteristics and the threshold regime as a function of cavity length. We develop effective two-dimensional model simulations which are derived after studying the full three-dimensional passive material structures by matching the cavity quality factors and resonance properties. We also demonstrate how to obtain the correct point-dipole radiative decay rate from Fermi's golden rule, which is captured naturally by the FDTD method. Our numerical simulations predict that the pump threshold plateaus around cavity lengths greater than N =9 , which we identify as a consequence of the complex spatial dynamics and gain coupling from the inhomogeneous QD ensemble. This behavior is not expected from simple rate-equation analysis commonly adopted in the literature, but is in qualitative agreement with recent experiments. Single-mode to multimode lasing is also observed, depending on the spectral peak frequency of the QD ensemble. Using a statistical modal analysis of the average decay rates, we also

  6. Electroweak evolution equations

    International Nuclear Information System (INIS)

    Ciafaloni, Paolo; Comelli, Denis

    2005-01-01

    Enlarging a previous analysis, where only fermions and transverse gauge bosons were taken into account, we write down infrared-collinear evolution equations for the Standard Model of electroweak interactions computing the full set of splitting functions. Due to the presence of double logs which are characteristic of electroweak interactions (Bloch-Nordsieck violation), new infrared singular splitting functions have to be introduced. We also include corrections related to the third generation Yukawa couplings

  7. Bloch Modes and Evanescent Modes of Photonic Crystals: Weak Form Solutions Based on Accurate Interface Triangulation

    Directory of Open Access Journals (Sweden)

    Matthias Saba

    2015-01-01

    Full Text Available We propose a new approach to calculate the complex photonic band structure, both purely dispersive and evanescent Bloch modes of a finite range, of arbitrary three-dimensional photonic crystals. Our method, based on a well-established plane wave expansion and the weak form solution of Maxwell’s equations, computes the Fourier components of periodic structures composed of distinct homogeneous material domains from a triangulated mesh representation of the inter-material interfaces; this allows substantially more accurate representations of the geometry of complex photonic crystals than the conventional representation by a cubic voxel grid. Our method works for general two-phase composite materials, consisting of bi-anisotropic materials with tensor-valued dielectric and magnetic permittivities ε and μ and coupling matrices ς. We demonstrate for the Bragg mirror and a simple cubic crystal closely related to the Kelvin foam that relatively small numbers of Fourier components are sufficient to yield good convergence of the eigenvalues, making this method viable, despite its computational complexity. As an application, we use the single gyroid crystal to demonstrate that the consideration of both conventional and evanescent Bloch modes is necessary to predict the key features of the reflectance spectrum by analysis of the band structure, in particular for light incident along the cubic [111] direction.

  8. Bloch-Siegert shift in Dirac-Weyl fermionic systems

    Science.gov (United States)

    Kumar, Upendra; Kumar, Vipin; Enamullah, Setlur, Girish S.

    2018-04-01

    The Bloch-Siegert shift is a phenomenon in quantum optics, typically seen in two-level systems, when the driving field is sufficiently strong. The inclusion of frequency doubling effect (counter rotating term) in the conventional rotating wave approximation (RWA) changes the resonance condition thereby producing a rather small shift in the resonance condition, which is known as the Bloch-Siegert shift (BSS). Rabi oscillations in Dirac-Weyl fermionic systems exhibit anomalous behavior far from resonance, called anomalous Rabi oscillations. Therefore, in the present work, we study the phenomenon of the Bloch-Siegert shift in Weyl semimetal and topological insulator (TI) far from resonance, called anomalous Bloch-Siegert shift (ABSS). It is seen that the change in the resonance condition of anomalous Rabi oscillations is drastic in Weyl semimetal and TI. The ABSS in Weyl semimetals is highly anisotropic, whereas it is isotropic in TI. In case of TI, it is the Chern number which plays a crucial role to produce substantial change in the ABSS.

  9. News Focus: NSF Director Erich Bloch Discusses Foundation's Problems, Outlook.

    Science.gov (United States)

    Chemical and Engineering News, 1987

    1987-01-01

    Relates the comments offered in an interview with Erich Bloch, the National Science Foundation (NSF) Director. Discusses issues related to NSF and its funding, engineering research centers, involvement with industry, concern for science education, computer centers, and its affiliation with the social sciences. (ML)

  10. Improved Reading Gate For Vertical-Bloch-Line Memory

    Science.gov (United States)

    Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

    1994-01-01

    Improved design for reading gate of vertical-Bloch-line magnetic-bubble memory increases reliability of discrimination between binary ones and zeros. Magnetic bubbles that signify binary "1" and "0" produced by applying sufficiently large chopping currents to memory stripes. Bubbles then propagated differentially in bubble sorter. Method of discriminating between ones and zeros more reliable.

  11. Influence of relaxation times on the Bloch-Siegert shift

    International Nuclear Information System (INIS)

    Cao Long Van

    1981-01-01

    A new method for calculations of Bloch-Siegert shifts in resonances between excited states with the inclusion of relaxation times is given. It will be shown that in this case the definition of the resonance given by I. Bialynicka-Birula is in agreement with the criterion defining the resonance used by D.A. Andrews and G. Newton. (author)

  12. Quasi-periodic Schroedinger operators in one dimension, absolutely continuous spectra, Bloch waves, and integrable Hamiltonian systems

    International Nuclear Information System (INIS)

    Chierchia, L.

    1986-01-01

    In the first chapter, the eigenvalue problem for a periodic Schroedinger operator, Lf = (-d 2 /dx 2 + v)f = Ef, is viewed as a two-dimensional Hamiltonian system which is integrable in the sense of Arnold and Liouville. With the aid of the Floquet-BLoch theory, it is shown that such a system is conjugate to two harmonic oscillators with frequencies α and omega, being the rotation number for L and 2π/omega the period of the potential v. This picture is generalized in the second chapter, to quasi periodic Schroedinger operators, L/sub epsilon/, with highly irrational frequencies (omega 1 , ..., omega/sub d/), which are a small perturbation of periodic operators. In the last chapter, the absolutely continuous spectrum σ/sub ac/ of a general quasi-periodic Schroedinger operators is considered. The Radon-Nikodym derivatives (with respect to Lebesgue measure) of the spectral measures are computed in terms of special independent eigensolutions existing for almost ever E in σ/sub ac/. Finally, it is shown that weak Bloch waves always exist for almost ever E in σ/sub ac/ and the question of the existence of genuine Bloch waves is turned into a regularity problem for a certain nonlinear partial differential equation on a d-dimensional torus

  13. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  14. A note on the Königs domain of compact composition operators on the Bloch space

    Directory of Open Access Journals (Sweden)

    Jones Matthew

    2011-01-01

    Full Text Available Abstract Let be the unit disk in the complex plane. We define to be the little Bloch space of functions f analytic in which satisfy lim|z|→1 (1 - |z|2|f'(z| = 0. If is analytic then the composition operator Cφ : f ↦ f ∘ φ is a continuous operator that maps into itself. In this paper, we show that the compactness of Cφ , as an operator on , can be modelled geometrically by its principal eigenfunction. In particular, under certain necessary conditions, we relate the compactness of Cφ to the geometry of , where σ satisfies Schöder's functional equation σ ∘ φ = φ'(0σ. 2000 Mathematics Subject Classification: Primary 30D05; 47B33 Secondary 30D45.

  15. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  16. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  17. Orbital magnetism of Bloch electrons I. General formula

    International Nuclear Information System (INIS)

    Ogata, Masao; Fukuyama, Hidetoshi

    2015-01-01

    We derive an exact formula of orbital susceptibility expressed in terms of Bloch wave functions, starting from the exact one-line formula by Fukuyama in terms of Green's functions. The obtained formula contains four contributions: (1) Landau-Peierls susceptibility, (2) interband contribution, (3) Fermi surface contribution, and (4) contribution from occupied states. Except for the Landau-Peierls susceptibility, the other three contributions involve the crystal-momentum derivatives of Bloch wave functions. Physical meaning of each term is clarified. The present formula is simplified compared with those obtained previously by Hebborn et al. Based on the formula, it is seen first of all that diamagnetism from core electrons and Van Vleck susceptibility are the only contributions in the atomic limit. The band effects are then studied in terms of linear combination of atomic orbital treating overlap integrals between atomic orbitals as a perturbation and the itinerant feature of Bloch electrons in solids are clarified systematically for the first time. (author)

  18. Properties of Floquet-Bloch space harmonics in 1D periodic magneto-dielectric structures

    DEFF Research Database (Denmark)

    Breinbjerg, O.

    2012-01-01

    Recent years have witnessed a significant research interest in Floquet-Bloch analysis for determining the homogenized permittivity and permeability of metamaterials consisting of periodic structures. This work investigates fundamental properties of the Floquet-Bloch space harmonics in a 1......-dimensional magneto-dielectric lossless structure supporting a transverse-electric-magnetic Floquet-Bloch wave; in particular, the space harmonic permittivity and permeability, as well as the space harmonic Poynting vector....

  19. The transmission factor of a bloch wall for spin waves whose wave vector is perpendicular to the wall (1961); Facteur de transmission d'une paroi de bloch pour des ondes de spin de vecteur d'onde normal a la paroi (1961)

    Energy Technology Data Exchange (ETDEWEB)

    Boutron, F [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1961-07-01

    When, for a ferromagnetic, the anisotropic energy takes the form E= K sin{sup 2} {alpha}, the study of the propagation of spin waves of low energy across a Bloch wall leads to a one-dimensional Schrodinger equation in which is found a potential well which has the remarkable property of being completely transparent for all values of the incident wave energy. (author) [French] Dans un ferromagnetique, lorsque la densite d'energie d'anisotropie est de la forme E= K sin{sup 2} {alpha}, l'etude de la propagation des ondes de spin de faible energie a travers une paroi de Bloch, conduit a une equation de Schrodinger a une dimension, dans laquelle figure un puits de potentiel qui a la propriete remarquable d'etre completement transparent quelle que soit l'energie de l'onde incidente. (auteur)

  20. A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. II. Spatio-temporal dynamics

    Science.gov (United States)

    Böhringer, Klaus; Hess, Ortwin

    The spatio-temporal dynamics of novel semiconductor lasers is discussed on the basis of a space- and momentum-dependent full time-domain approach. To this means the space-, time-, and momentum-dependent Full-Time Domain Maxwell Semiconductor Bloch equations, derived and discussed in our preceding paper I [K. Böhringer, O. Hess, A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation], are solved by direct numerical integration. Focussing on the device physics of novel semiconductor lasers that profit, in particular, from recent advances in nanoscience and nanotechnology, we discuss the examples of photonic band edge surface emitting lasers (PBE-SEL) and semiconductor disc lasers (SDLs). It is demonstrated that photonic crystal effects can be obtained for finite crystal structures, and leading to a significant improvement in laser performance such as reduced lasing thresholds. In SDLs, a modern device concept designed to increase the power output of surface-emitters in combination with near-diffraction-limited beam quality, we explore the complex interplay between the intracavity optical fields and the quantum well gain material in SDL structures. Our simulations reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers, and stimulated recombination from states near the band edge. Our full time-domain approach is shown to also be an excellent framework for the modelling of the interaction of high-intensity femtosecond and picosecond pulses with semiconductor nanostructures. It is demonstrated that group velocity dispersion, dynamical gain saturation and fast self-phase modulation (SPM) are the main causes for the induced changes and asymmetries in the amplified pulse shape and spectrum of an ultrashort high-intensity pulse. We attest that the time constants of the intraband scattering processes are critical to gain recovery. Moreover, we present

  1. Traffic restrictions on Routes Bloch, Maxwell and Bohr

    CERN Multimedia

    IT Department

    2008-01-01

    Excavation and pipework is being carried out in the framework of the transfer of the waste water treatment plant for the effluents from the surface treatment workshops from Building 254 to Building 676, currently under construction. This work may encroach onto Routes Bloch, Maxwell and Bohr and disrupt the flow of traffic. Users are requested to comply with the road signs that will be erected. The work is expected to last until the beginning of December 2008. Thank you for your understanding. TS/CE and TS/FM Groups Tel.7 4188 or 16 4314

  2. Bipolaron assisted Bloch-like oscillations in organic lattices

    International Nuclear Information System (INIS)

    Ribeiro, Luiz Antonio; Ferreira da Cunha, Wiliam; Magela e Silva, Geraldo

    2017-01-01

    The transport of a dissociated bipolaron in organic one-dimensional lattices is theoretically investigated in the scope of a tight-binding model that includes electron-lattice interactions and an external electric field. Remarkably, the results point to a physical picture in which the dissociated bipolaron propagates as a combined state of two free-like electrons that coherently perform spatial Bloch oscillations (BO) above a critical field strength. It was also obtained that the BO's trajectory presents a net forward motion in the direction of the applied electric field. The impact of dynamical disorder in the formation of electronic BOs is determined.

  3. Bipolaron assisted Bloch-like oscillations in organic lattices

    Science.gov (United States)

    Ribeiro, Luiz Antonio; Ferreira da Cunha, Wiliam; Magela e Silva, Geraldo

    2017-06-01

    The transport of a dissociated bipolaron in organic one-dimensional lattices is theoretically investigated in the scope of a tight-binding model that includes electron-lattice interactions and an external electric field. Remarkably, the results point to a physical picture in which the dissociated bipolaron propagates as a combined state of two free-like electrons that coherently perform spatial Bloch oscillations (BO) above a critical field strength. It was also obtained that the BO's trajectory presents a net forward motion in the direction of the applied electric field. The impact of dynamical disorder in the formation of electronic BOs is determined.

  4. Bipolaron assisted Bloch-like oscillations in organic lattices

    Energy Technology Data Exchange (ETDEWEB)

    Ribeiro, Luiz Antonio, E-mail: ribeirojr@unb.br [International Center for Condensed Matter Physics, University of Brasília, P.O. Box 04531, 70.919-970, Brasília, DF (Brazil); University of Brasília, UnB Faculty of Planaltina, 73.345-010, Planaltina, DF (Brazil); Ferreira da Cunha, Wiliam; Magela e Silva, Geraldo [Institute of Physics, University of Brasília, 70.919-970, Brasília (Brazil)

    2017-06-15

    The transport of a dissociated bipolaron in organic one-dimensional lattices is theoretically investigated in the scope of a tight-binding model that includes electron-lattice interactions and an external electric field. Remarkably, the results point to a physical picture in which the dissociated bipolaron propagates as a combined state of two free-like electrons that coherently perform spatial Bloch oscillations (BO) above a critical field strength. It was also obtained that the BO's trajectory presents a net forward motion in the direction of the applied electric field. The impact of dynamical disorder in the formation of electronic BOs is determined.

  5. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  6. A formula for the Bloch vector of some Lindblad quantum systems

    International Nuclear Information System (INIS)

    Salgado, D.; Sanchez-Gomez, J.L.

    2004-01-01

    Using the Bloch representation of an N-dimensional quantum system and immediate results from quantum stochastic calculus, we establish a closed formula for the Bloch vector, hence also for the density operator, of a quantum system following a Lindblad evolution with selfadjoint Lindblad operators

  7. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  8. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  9. Electrowetting on semiconductors

    Science.gov (United States)

    Palma, Cesar; Deegan, Robert

    2015-01-01

    Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

  10. Entanglement and the three-dimensionality of the Bloch ball

    Energy Technology Data Exchange (ETDEWEB)

    Masanes, Ll., E-mail: ll.masanes@gmail.com [Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT (United Kingdom); Müller, M. P. [Institut für Theoretische Physik, Universität Heidelberg, Philosophenweg 19, D-69120 Heidelberg (Germany); Pérez-García, D. [Departamento de Analisis Matematico and IMI, Universidad Complutense de Madrid, 28040 Madrid (Spain); Augusiak, R. [ICFO-Institut de Ciencies Fotoniques, 08860 Castelldefels, Barcelona (Spain)

    2014-12-15

    We consider a very natural generalization of quantum theory by letting the dimension of the Bloch ball be not necessarily three. We analyze bipartite state spaces where each of the components has a d-dimensional Euclidean ball as state space. In addition to this, we impose two very natural assumptions: the continuity and reversibility of dynamics and the possibility of characterizing bipartite states by local measurements. We classify all these bipartite state spaces and prove that, except for the quantum two-qubit state space, none of them contains entangled states. Equivalently, in any of these non-quantum theories, interacting dynamics is impossible. This result reveals that “existence of entanglement” is the requirement with minimal logical content which singles out quantum theory from our family of theories.

  11. From Bloch to random lasing in ZnO self-assembled nanostructures

    DEFF Research Database (Denmark)

    Garcia-Fernandez, Pedro David; Cefe, López

    2013-01-01

    In this paper, we present measurements on UV lasing in ZnO ordered and disordered nanostructures. Bloch lasing is achieved in the ordered structures by exploiting very low group-velocity Bloch modes in ZnO photonic crystals. In the second case, random lasing is observed in ZnO photonic glasses. We...... study the lasing threshold in both cases and its dependence on the structural parameters. Finally, we present the transition from Bloch to random lasing by deliberately doping a ZnO inverse photonic crystal with a controlled amount of lattice vacancies effectively converting it into a translationally...

  12. Spin Relaxation in III-V Semiconductors in various systems: Contribution of Electron-Electron Interaction

    Science.gov (United States)

    Dogan, Fatih; Kesserwan, Hasan; Manchon, Aurelien

    2015-03-01

    In spintronics, most of the phenomena that we are interested happen at very fast time scales and are rich in structure in time domain. Our understanding, on the other hand, is mostly based on energy domain calculations. Many of the theoretical tools use approximations and simplifications that can be perceived as oversimplifications. We compare the structure, material, carrier density and temperature dependence of spin relaxation time in n-doped III-V semiconductors using Elliot-Yafet (EY) and D'yakanov-Perel'(DP) with real time analysis using kinetic spin Bloch equations (KSBE). The EY and DP theories fail to capture details as the system investigated is varied. KSBE, on the other hand, incorporates all relaxation sources as well as electron-electron interaction which modifies the spin relaxation time in a non-linear way. Since el-el interaction is very fast (~ fs) and spin-conserving, it is usually ignored in the analysis of spin relaxation. Our results indicate that electron-electron interaction cannot be neglected and its interplay with the other (spin and momentum) relaxation mechanisms (electron-impurity and electron-phonon scattering) dramatically alters the resulting spin dynamics. We use each interaction explicitly to investigate how, in the presence of others, each relaxation source behaves. We use GaAs and GaN for zinc-blend structure, and GaN and AlN for the wurtzite structure.

  13. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  14. Quantum Transport in Solids: Bloch Dynamics and Role of Oscillating Fields

    National Research Council Canada - National Science Library

    Kim, Ki

    1997-01-01

    .... The specific areas of research are those of Bloch electron dynamics, quantum transport in oscillating electric fields or in periodic potentials, and the capacitive nature of atomic size structures...

  15. Surface Acoustic Analog of Bloch Oscillations, Wannier-Stark Ladders and Landau-Zener Tunneling

    Science.gov (United States)

    de Lima, M. M.; Kosevich, Yu. A.; Santos, P. V.; Cantarero, A.

    2011-12-01

    In this contribution, we discuss the recent experimental demonstration of Wannier-Stark ladders, Bloch Oscillations and Landau Zener tunneling in a solid by means of surface acoustic waves propagating through perturbed grating structures.

  16. Non-Bloch decay of Rabi oscillations in liquid state NMR

    Science.gov (United States)

    Chakrabarti, Arnab; Bhattacharyya, Rangeet

    2018-03-01

    Rabi oscillations are known to exhibit non-Bloch behaviour in anisotropic media. In this letter, we report an experimental observation of non-Bloch decay of Rabi oscillations in isotropic liquid state NMR. To avoid the dephasing due to the radio-frequency inhomogeneities, we develop a modified version of the rotary echo protocol and use it to determine the decay rates of Rabi oscillations. We find that the measured decay rates are proportional to the square of the Rabi frequencies and the proportionality constant is of the order of tens of picoseconds. Further, we show that this non-Bloch nature of the decay rates becomes less prominent with increasing temperature. The implications of the presence of non-Bloch decay rates in liquid state NMR in the context of ensemble quantum computing are also discussed.

  17. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  18. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  19. Optical properties of bulk semiconductors and graphene/boron nitride: the Bethe-Salpeter equation with derivative discontinuity-corrected density functional energies

    DEFF Research Database (Denmark)

    Yan, Jun; Jacobsen, Karsten W.; Thygesen, Kristian S.

    2012-01-01

    -dimensional systems of graphene and hexagonal boron-nitride (h-BN) we find good agreement with previous many-body calculations. For the graphene/h-BN interface we find that the fundamental and optical gaps of the h-BN layer are reduced by 2.0 and 0.7 eV, respectively, compared to freestanding h-BN. This reduction......We present an efficient implementation of the Bethe-Salpeter equation (BSE) for optical properties of materials in the projector augmented wave method Grid-based projector-augmented wave method (GPAW). Single-particle energies and wave functions are obtained from the Gritsenko, Leeuwen, Lenthe...

  20. Quantum qubit measurement by a quantum point contact with a quantum Langevin equation approach

    International Nuclear Information System (INIS)

    Dong, Bing; Lei, X.L.; Horing, N.J.M.; Cui, H.L.

    2007-01-01

    We employ a microscopic quantum Heisenberg-Langevin equation approach to establish a set of quantum Bloch equations for a two-level system (coupled quantum dots) capacitively coupled to a quantum point contact (QPC). The resulting Bloch equations facilitate our analysis of qubit relaxation and decoherence in coupled quantum dots induced by measurement processes at arbitrary bias-voltage and temperature. We also examine the noise spectrum of the meter output current for a symmetric qubit. These results help resolve a recent debate about a quantum oscillation peak in the noise spectrum. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. On the equilibrium configuration of the Kittel type domain structure with Bloch walls, l80deg

    International Nuclear Information System (INIS)

    Gavrila, H.

    1975-01-01

    Using a phenomenologic method for appreciating different components of the free energy, the equilibrium configuration of the Kittel-type domain structure with Bloch walls is obtained. By improving the known methods, more accurate magnetostatic energy calculations are reported. In order to determine the equilibrium structure, the total free energy is minimized with respect to two system parameters: the Bloch wall width and the structure half-period. (author)

  2. Optical Effects Induced by Bloch Surface Waves in One-Dimensional Photonic Crystals

    Directory of Open Access Journals (Sweden)

    Irina V. Soboleva

    2018-01-01

    Full Text Available The review considers the influence of Bloch surface waves on the optical and magneto-optical effects observed in photonic crystals; for example, the Goos–Hänchen effect, the Faraday effect, optical trapping and so on. Prospects for using Bloch surface waves for spatial light modulation, for controlling the polarization of light, for optical trapping and control of micro-objects are discussed.

  3. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  4. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  5. Philippe Bloch: Reducing distance between experiments and CERN

    CERN Multimedia

    2009-01-01

    With its unique combination of several hundred staff members and thousands of users from around the world sharing offices and physics data and profiting from mutually beneficial exchanges of know-how and expertise, the PH Department is a good example of a successful worldwide collaboration, set up as it was to construct and run the Laboratory’s physics experiments. The PH Depart-ment has always played host to thousands of users that contribute to CERN experiments and work on them, and whose numbers are set to grow in the years to come. With his long-standing experience as a user and then as the head of the CERN group within the CMS collaboration, Philippe Bloch, the new PH Department Head, is in favour of closer links between the Department and the experiments. "I think that the PH management should have a direct link to the experiments, and to do so we are holding regular management team meetings comprising members of the Department’s management and the e...

  6. Bloch-Nordsieck estimates of high-temperature QED

    International Nuclear Information System (INIS)

    Fried, H. M.; Sheu, Y.-M.; Grandou, T.

    2008-01-01

    In anticipation of a subsequent application to QCD, we consider the case of QED at high temperature. We introduce a Fradkin representation into the exact, Schwingerian, functional expression of a fermion propagator, as well as a new and relevant version of the Bloch-Nordsieck model, which extracts the soft contributions of every perturbative graph, in contradistinction to the assumed separation of energy scales of previous semiperturbative treatments. Our results are applicable to the absorption of a fast particle which enters a heat bath, as well as to the propagation of a symmetric pulse within the thermal medium due to the appearance of an instantaneous, shockwave-like source acting in the medium. An exponentially decreasing time dependence of the incident particle's initial momentum combines with a stronger decrease in the particle's energy, estimated by a sum over all Matsubara frequencies, to model an initial 'fireball', which subsequently decays in a Gaussian fashion. When extended to QCD, qualitative applications could be made to RHIC scattering, in which a fireball appears, expands, and is damped away

  7. Semiconductor color-center structure and excitation spectra: Equation-of-motion coupled-cluster description of vacancy and transition-metal defect photoluminescence

    Science.gov (United States)

    Lutz, Jesse J.; Duan, Xiaofeng F.; Burggraf, Larry W.

    2018-03-01

    Valence excitation spectra are computed for deep-center silicon-vacancy defects in 3C, 4H, and 6H silicon carbide (SiC), and comparisons are made with literature photoluminescence measurements. Optimizations of nuclear geometries surrounding the defect centers are performed within a Gaussian basis-set framework using many-body perturbation theory or density functional theory (DFT) methods, with computational expenses minimized by a QM/MM technique called SIMOMM. Vertical excitation energies are subsequently obtained by applying excitation-energy, electron-attached, and ionized equation-of-motion coupled-cluster (EOMCC) methods, where appropriate, as well as time-dependent (TD) DFT, to small models including only a few atoms adjacent to the defect center. We consider the relative quality of various EOMCC and TD-DFT methods for (i) energy-ordering potential ground states differing incrementally in charge and multiplicity, (ii) accurately reproducing experimentally measured photoluminescence peaks, and (iii) energy-ordering defects of different types occurring within a given polytype. The extensibility of this approach to transition-metal defects is also tested by applying it to silicon-substituted chromium defects in SiC and comparing with measurements. It is demonstrated that, when used in conjunction with SIMOMM-optimized geometries, EOMCC-based methods can provide a reliable prediction of the ground-state charge and multiplicity, while also giving a quantitative description of the photoluminescence spectra, accurate to within 0.1 eV of measurement for all cases considered.

  8. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  9. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  10. Microscopic theory of coherent and incoherent optical properties of semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Schaefer, Martin

    2008-09-02

    An important question is whether there is a regime in which lasing from indirect semiconductors is possible. Thus, we discuss this question in this thesis. It is shown that under incoherent emission conditions it is possible to create an exciton condensate in multiple-quantum-well (MQW) systems. The influence of a MQW structure on the exciton lifetime is investigated. For the description of the light-matter interaction of a QW in the coherent excitation regime, the semiconductor Bloch equation (SBE) are used. The incoherent regime is described by the semiconductor luminescence equations (SLE). In principle it is even possible to couple SBE and SLE. The resulting theory is able to describe interactions between coherent and incoherent processes we investigate both, the coherent and the incoherent light-emission regime. Thus we define the investigated system and introduce the many-body Hamiltonian that describes consistently the light-matter interaction in the classical and the quantum limit. We introduce the SBE that allow to compute the light-matter interaction in the coherent scenario. The extended scattering model is used to investigate the absorption of a Ge QW for different time delays after the excitations. In this context, we analyze whether there is a regime in which optical gain can be realized. Then we apply a transfer-matrix method to include into our calculations the influence of the dielectric environment on the optical response. Thereafter the SLE for a MQW system are introduced. We derive a scheme that allows for decoupling environmental effects from the pure PL-emission properties of the QW. The PL of the actual QW system is obtained by multiplying this filter function and the free-space PL that describes the quantum emission into a medium with spatially constant background-refractive index. It is studied how the MQW-Bragg structure influences the PL-emission properties compared to the emission of a single QW device. As a last feature, it is shown

  11. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  12. Bloch-Surface-Polariton-Based Hybrid Nanowire Structure for Subwavelength, Low-Loss Waveguiding

    Directory of Open Access Journals (Sweden)

    Weijing Kong

    2018-03-01

    Full Text Available Surface plasmon polaritons (SPPs have been thoroughly studied in the past decades for not only sensing but also waveguiding applications. Various plasmonic device structures have been explored due to their ability to confine their optical mode to the subwavelength level. However, with the existence of metal, the large ohmic loss limits the propagation distance of the SPP and thus the scalability of such devices. Therefore, different hybrid waveguides have been proposed to overcome this shortcoming. Through fine tuning of the coupling between the SPP and a conventional waveguide mode, a hybrid mode could be excited with decent mode confinement and extended propagation distance. As an effective alternative of SPP, Bloch surface waves have been re-investigated more recently for their unique advantages. As is supported in all-dielectric structures, the optical loss for the Bloch surface wave is much lower, which stands for a much longer propagating distance. Yet, the confinement of the Bloch surface wave due to the reflections and refractions in the multilayer structure is not as tight as that of the SPP. In this work, by integrating a periodic multilayer structure that supports the Bloch surface wave with a metallic nanowire structure, a hybrid Bloch surface wave polariton could be excited. With the proposed hybrid nanowire structure, a hybrid mode is demonstrated with the deep subwavelength mode confinement and a propagation distance of tens of microns.

  13. Quasiperiodicity in time evolution of the Bloch vector under the thermal Jaynes-Cummings model

    Science.gov (United States)

    Azuma, Hiroo; Ban, Masashi

    2014-07-01

    We study a quasiperiodic structure in the time evolution of the Bloch vector, whose dynamics is governed by the thermal Jaynes-Cummings model (JCM). Putting the two-level atom into a certain pure state and the cavity field into a mixed state in thermal equilibrium at initial time, we let the whole system evolve according to the JCM Hamiltonian. During this time evolution, motion of the Bloch vector seems to be in disorder. Because of the thermal photon distribution, both a norm and a direction of the Bloch vector change hard at random. In this paper, taking a different viewpoint compared with ones that we have been used to, we investigate quasiperiodicity of the Bloch vector’s trajectories. Introducing the concept of the quasiperiodic motion, we can explain the confused behaviour of the system as an intermediate state between periodic and chaotic motions. More specifically, we discuss the following two facts: (1) If we adjust the time interval Δt properly, figures consisting of plotted dots at the constant time interval acquire scale invariance under replacement of Δt by sΔt, where s(>1) is an arbitrary real but not transcendental number. (2) We can compute values of the time variable t, which let |Sz(t)| (the absolute value of the z-component of the Bloch vector) be very small, with the Diophantine approximation (a rational approximation of an irrational number).

  14. Several Growth Characteristics of an Invasive Cyprinid Fish (Carassius gibelio Bloch, 1782

    Directory of Open Access Journals (Sweden)

    Sait BULUT

    2013-05-01

    Full Text Available Age composition, length-weight relationships, growth, and condition factors of the gibel carp (Carassius gibelio Bloch, 1782 were determined using specimens collected from Seyitler Reservoir between July 2005 to June 2006. A total of 149 gibel carp were observed and examined. The age composition of the samples ranged between I and VII years of age. It has been determined than 82.55% of the obtained samples are comprised of females, 16.11% is comprised of males and 1.34% is comprised of immature. The population is dominated by females able to reproduce gynogenetically. The mean fork lengths and mean weights of the population were 14.8-32.5 cm and 43.1-807.3 g respectively. The length-weight relation were calculated as W = 0.0696 L2.132, r=0.838 for females, for males W = 0.2942 L2.6417 r=0.784 and W = 0.0274 L2.9382, r=0.813 for all samples. The mean Fulton Condition Factor was calculated as 2.342 for females, 2.064 for males and 2.276 for all samples. Age-length and age-weight relations were determined according to von Bertalanffy growth equation formula. Growth parameters of the population were Lt = 48.09 [1-e-0.093(t+0.29], and Wt=2323.62 [1-e-0.093(t+0.29]2.9382. The growth performance index value (Ø´ was computed as 5.37 for all specimens.

  15. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  16. Integral type operators from normal weighted Bloch spaces to QT,S spaces

    Directory of Open Access Journals (Sweden)

    Yongyi GU

    2016-08-01

    Full Text Available Operator theory is an important research content of the analytic function space theory. The discussion of simultaneous operator and function space is an effective way to study operator and function space. Assuming that  is an analytic self map on the unit disk Δ, and the normal weighted bloch space μ-B is a Banach space on the unit disk Δ, defining a composition operator C∶C(f=f on μ-B for all f∈μ-B, integral type operator JhC and CJh are generalized by integral operator and composition operator. The boundeness and compactness of the integral type operator JhC acting from normal weighted Bloch spaces to QT,S spaces are discussed, as well as the boundeness of the integral type operators CJh acting from normal weighted Bloch spaces to QT,S spaces. The related sufficient and necessary conditions are given.

  17. Mechanical Properties of Laminate Materials: From Surface Waves to Bloch Oscillations

    DEFF Research Database (Denmark)

    Liang, Z.; Willatzen, Morten; Christensen, Johan

    2015-01-01

    for designing Bloch oscillations in classical plate structures and show how mechanical Bloch oscillations can be generated in arrays of solid plates when the modal wavelength is gradually reduced. The design recipe describes how Bloch oscillations in classical structures of arbitrary dimensions can be generated......We propose hitherto unexplored and fully analytical insights into laminate elastic materials in a true condensed-matter-physics spirit. Pure mechanical surface waves that decay as evanescent waves from the interface are discussed, and we demonstrate how these designer Scholte waves are controlled......, and we demonstrate this numerically for structures with millimeter and centimeter dimensions in the kilohertz to megahertz range. Analytical predictions agree entirely with full wave simulations showing how elastodynamics can mimic quantum-mechanical condensed-matter phenomena....

  18. Incorporating excitation-induced dephasing into the Maxwell-Bloch numerical modeling of photon echoes

    International Nuclear Information System (INIS)

    Burr, G.W.; Harris, Todd L.; Babbitt, Wm. Randall; Jefferson, C. Michael

    2004-01-01

    We describe the incorporation of excitation-induced dephasing (EID) into the Maxwell-Bloch numerical simulation of photon echoes. At each time step of the usual numerical integration, stochastic frequency jumps of ions--caused by excitation of neighboring ions--is modeled by convolving each Bloch vector with the Bloch vectors of nearby frequency detunings. The width of this convolution kernel follows the instantaneous change in overall population, integrated over the simulated bandwidth. This approach is validated by extensive comparison against published and original experimental results. The enhanced numerical model is then used to investigate the accuracy of experiments designed to extrapolate to the intrinsic dephasing time T 2 from data taken in the presence of EID. Such a modeling capability offers improved understanding of experimental results, and should allow quantitative analysis of engineering tradeoffs in realistic optical coherent transient applications

  19. Bloch wave deafness and modal conversion at a phononic crystal boundary

    Directory of Open Access Journals (Sweden)

    Vincent Laude

    2011-12-01

    Full Text Available We investigate modal conversion at the boundary between a homogeneous incident medium and a phononic crystal, with consideration of the impact of symmetry on the excitation of Bloch waves. We give a quantitative criterion for the appearance of deaf Bloch waves, which are antisymmetric with respect to a symmetry axis of the phononic crystal, in the frame of generalized Fresnel formulas for reflection and transmission at the phononic crystal boundary. This criterion is used to index Bloch waves in the complex band structure of the phononic crystal, for directions of incidence along a symmetry axis. We argue that within deaf frequency ranges transmission is multi-exponential, as it is within frequency band gaps.

  20. On averaging the Kubo-Hall conductivity of magnetic Bloch bands leading to Chern numbers

    International Nuclear Information System (INIS)

    Riess, J.

    1997-01-01

    The authors re-examine the topological approach to the integer quantum Hall effect in its original form where an average of the Kubo-Hall conductivity of a magnetic Bloch band has been considered. For the precise definition of this average it is crucial to make a sharp distinction between the discrete Bloch wave numbers k 1 , k 2 and the two continuous integration parameters α 1 , α 2 . The average over the parameter domain 0 ≤ α j 1 , k 2 . They show how this can be transformed into a single integral over the continuous magnetic Brillouin zone 0 ≤ α j j , j = 1, 2, n j = number of unit cells in j-direction, keeping k 1 , k 2 fixed. This average prescription for the Hall conductivity of a magnetic Bloch band is exactly the same as the one used for a many-body system in the presence of disorder

  1. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  2. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  3. Computational Modeling of Bloch Surface Waves in One-Dimensional Periodic and Aperiodic Multilayer Structures

    Science.gov (United States)

    Koju, Vijay

    Photonic crystals and their use in exciting Bloch surface waves have received immense attention over the past few decades. This interest is mainly due to their applications in bio-sensing, wave-guiding, and other optical phenomena such as surface field enhanced Raman spectroscopy. Improvement in numerical modeling techniques, state of the art computing resources, and advances in fabrication techniques have also assisted in growing interest in this field. The ability to model photonic crystals computationally has benefited both the theoretical as well as experimental communities. It helps the theoretical physicists in solving complex problems which cannot be solved analytically and helps to acquire useful insights that cannot be obtained otherwise. Experimentalists, on the other hand, can test different variants of their devices by changing device parameters to optimize performance before fabrication. In this dissertation, we develop two commonly used numerical techniques, namely transfer matrix method, and rigorous coupled wave analysis, in C++ and MATLAB, and use two additional software packages, one open-source and another commercial, to model one-dimensional photonic crystals. Different variants of one-dimensional multilayered structures such as perfectly periodic dielectric multilayers, quasicrystals, aperiodic multilayer are modeled, along with one-dimensional photonic crystals with gratings on the top layer. Applications of Bloch surface waves, along with new and novel aperiodic dielectric multilayer structures that support Bloch surface waves are explored in this dissertation. We demonstrate a slow light configuration that makes use of Bloch Surface Waves as an intermediate excitation in a double-prism tunneling configuration. This method is simple compared to the more usual techniques for slowing light using the phenomenon of electromagnetically induced transparency in atomic gases or doped ionic crystals operated at temperatures below 4K. Using a semi

  4. Theory of semiconductor junction devices a textbook for electrical and electronic engineers

    CERN Document Server

    Leck, J H

    1967-01-01

    Theory of Semiconductor Junction Devices: A Textbook for Electrical and Electronic Engineers presents the simplified numerical computation of the fundamental electrical equations, specifically Poisson's and the Hall effect equations. This book provides the fundamental theory relevant for the understanding of semiconductor device theory. Comprised of 10 chapters, this book starts with an overview of the application of band theory to the special case of semiconductors, both intrinsic and extrinsic. This text then describes the electrical properties of conductivity, semiconductors, and Hall effe

  5. Development of semiconductor electronics

    International Nuclear Information System (INIS)

    Bardeen, John.

    1977-01-01

    In 1931, Wilson applied Block's theory about the energy bands for the motion of electrons in a crystal lattice to semiconductors and showed that conduction can take place in two different ways, by electrons and by holes. Not long afterwards Frenkel showed that these carriers can flow by diffusion in a concentration gradient as well as under the influence of an electric field and wrote down equations for the current flow. The third major contribution, in the late 1930's was the explanation of rectification at a metalsemiconductor contact by Mott and more completely by Schottky. In late 1947 the first transistor of the point contact type was invented by Brattin, Shockley and Bardeen. Then after single crystals of Ge were grown, the junction transistor was developed by the same group. The first silicon transistors appeared in 1954. Then an important step was discovery of the planar transistor by Hoenri in 1960 which led to development of integrated circuits by 1962. Many transistors are produced by batch processing on a slice of silicon. Then in 1965 Mos (Metal-Oxide Semiconductor) transistor and in 1968 LSI (Large Scale Intergration circuits) were developed. Aside from electronic circuits, there are many other applications of semiconductors, including junction power rectifiers, junction luminescence (including lasers), solar batteries, radiation detectors, microwave oscillators and charged-coupled devices for computer memories and devices. One of the latest developments is a microprocessor with thousands of transistors and associated circuitry on a single small chip of silicon. It can be programmed to provide a variety of circuit functions, thus it is not necessary to go through the great expense of LSI's for each desired function, but to use standard microprocessors and program to do the job

  6. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  7. Integral-Type Operators from Bloch-Type Spaces to QK Spaces

    Directory of Open Access Journals (Sweden)

    Stevo Stević

    2011-01-01

    Full Text Available The boundedness and compactness of the integral-type operator Iφ,g(nf(z=∫0zf(n(φ(ζg(ζdζ, where n∈N0, φ is a holomorphic self-map of the unit disk D, and g is a holomorphic function on D, from α-Bloch spaces to QK spaces are characterized.

  8. Bloch oscillations and accelerated Bose–Einstein condensates in an optical lattice

    Energy Technology Data Exchange (ETDEWEB)

    Sacchetti, Andrea, E-mail: andrea.sacchetti@unimore.it

    2017-01-30

    Highlights: • Discrete nonlinear Schrödinger model for accelerated BECs in optical lattices. • Numerical computation of wavefunction BECs dynamics. • Correlation between nonlinearity and the oscillating period of the BEC's center of mass. • Discussion of the validity of the Bloch Theorem for accelerated BECs in an optical lattice. - Abstract: We discuss the method for the measurement of the gravity acceleration g by means of Bloch oscillations of an accelerated BEC in an optical lattice. This method has a theoretical critical point due to the fact that the period of the Bloch oscillations depends, in principle, on the initial shape of the BEC wavepacket. Here, by making use of the nearest-neighbor model for the numerical analysis of the BEC wavefunction, we show that in real experiments the period of the Bloch oscillations does not really depend on the shape of the initial wavepacket and that the relative uncertainty, due to the fact that the initial shape of the wavepacket may be asymmetrical, is smaller than the one due to experimental errors. Furthermore, we also show that the relation between the oscillation period and the scattering length of the BEC's atoms is linear; this fact suggests us a new experimental procedure for the measurement of the scattering length of atoms.

  9. Diagrammatical display of the counter-example to non-Abelian Bloch-Nordsieck conjecture

    International Nuclear Information System (INIS)

    Yoshida, Nobuo

    1981-01-01

    The reason why the Bloch-Nordsieck theorem breaks down in the Drell-Yan process is shown through a simple diagrammatical calculation. The uncancelled contribution is from the retarded soft gluons, and the colour weight different for each ''double cut diagram'' interrupts the cancellation analogous to QED. (author)

  10. Direct Observation of Bloch Harmonics and Negative Phase Velocity in Photonic Crystal Waveguides

    NARCIS (Netherlands)

    Gersen, H.; Karle, T.J.; Engelen, R.J.P.; Engelen, R.J.P.; Bogaerts, W.; Korterik, Jeroen P.; van Hulst, N.F.; Krauss, T.F.; Kuipers, L.

    2005-01-01

    The eigenfield distribution and the band structure of a photonic crystal waveguide have been measured with a phase-sensitive near-field scanning optical microscope. Bloch modes, which consist of more than one spatial frequency, are visualized in the waveguide. In the band structure, multiple

  11. New algorithm for efficient Bloch-waves calculations of orientation-sensitive ELNES

    Czech Academy of Sciences Publication Activity Database

    Rusz, Ján; Muto, S.; Tatsumi, K.

    2013-01-01

    Roč. 125, Feb (2013), s. 81-88 ISSN 0304-3991 Institutional support: RVO:68378271 Keywords : transmission electron microscopy * density functional theory * dynamical diffraction theory * Bloch waves * electron magnetic circular dichroism Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.745, year: 2013

  12. A new characterization of Bloch function in the unit ball of Cn

    International Nuclear Information System (INIS)

    Shi Jihuai.

    1989-07-01

    Bloch function in the unit disc v has many different but equivalent characterizations. Recently, a new characterization has been obtained by the study of Hankel operators. The purpose of this note is to generalize this characterization to the unit ball of C n . 7 refs

  13. Web-based description of the space radiation environment using the Bethe-Bloch model

    Science.gov (United States)

    Cazzola, Emanuele; Calders, Stijn; Lapenta, Giovanni

    2016-01-01

    Space weather is a rapidly growing area of research not only in scientific and engineering applications but also in physics education and in the interest of the public. We focus especially on space radiation and its impact on space exploration. The topic is highly interdisciplinary, bringing together fundamental concepts of nuclear physics with aspects of radiation protection and space science. We give a new approach to presenting the topic by developing a web-based application that combines some of the fundamental concepts from these two fields into a single tool that can be used in the context of advanced secondary or undergraduate university education. We present DREADCode, an outreach or teaching tool to rapidly assess the current conditions of the radiation field in space. DREADCode uses the available data feeds from a number of ongoing space missions (ACE, GOES-13, GOES-15) to produce a first order approximation of the radiation dose an astronaut would receive during a mission of exploration in deep space (i.e. far from the Earth’s shielding magnetic field and from the radiation belts). DREADCode is based on an easy-to-use GUI interface available online from the European Space Weather Portal (www.spaceweather.eu/dreadcode). The core of the radiation transport computation to produce the radiation dose from the observed fluence of radiation observed by the spacecraft fleet considered is based on a relatively simple approximation: the Bethe-Bloch equation. DREADCode also assumes a simplified geometry and material configuration for the shields used to compute the dose. The approach is approximate and sacrifices some important physics on the altar of rapid execution time, which allows a real-time operation scenario. There is no intention here to produce an operational tool for use in space science and engineering. Rather, we present an educational tool at undergraduate level that uses modern web-based and programming methods to learn some of the most important

  14. Web-based description of the space radiation environment using the Bethe–Bloch model

    International Nuclear Information System (INIS)

    Cazzola, Emanuele; Lapenta, Giovanni; Calders, Stijn

    2016-01-01

    Space weather is a rapidly growing area of research not only in scientific and engineering applications but also in physics education and in the interest of the public. We focus especially on space radiation and its impact on space exploration. The topic is highly interdisciplinary, bringing together fundamental concepts of nuclear physics with aspects of radiation protection and space science. We give a new approach to presenting the topic by developing a web-based application that combines some of the fundamental concepts from these two fields into a single tool that can be used in the context of advanced secondary or undergraduate university education. We present DREADCode, an outreach or teaching tool to rapidly assess the current conditions of the radiation field in space. DREADCode uses the available data feeds from a number of ongoing space missions (ACE, GOES-13, GOES-15) to produce a first order approximation of the radiation dose an astronaut would receive during a mission of exploration in deep space (i.e. far from the Earth’s shielding magnetic field and from the radiation belts). DREADCode is based on an easy-to-use GUI interface available online from the European Space Weather Portal (www.spaceweather.eu/dreadcode). The core of the radiation transport computation to produce the radiation dose from the observed fluence of radiation observed by the spacecraft fleet considered is based on a relatively simple approximation: the Bethe–Bloch equation. DREADCode also assumes a simplified geometry and material configuration for the shields used to compute the dose. The approach is approximate and sacrifices some important physics on the altar of rapid execution time, which allows a real-time operation scenario. There is no intention here to produce an operational tool for use in space science and engineering. Rather, we present an educational tool at undergraduate level that uses modern web-based and programming methods to learn some of the most

  15. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  16. Effect of gain nonlinearity in semiconductor lasers

    DEFF Research Database (Denmark)

    Jensen, Niels H.; Christiansen, Peter Leth; Skovgaard, Ove

    1988-01-01

    Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2+1)-dimensi......Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2...

  17. Transistor electronics use of semiconductor components in switching operations

    CERN Document Server

    Rumpf, Karl-Heinz

    2014-01-01

    Transistor Electronics: Use of Semiconductor Components in Switching Operations presents the semiconductor components as well as their elementary circuits. This book discusses the scope of application of electronic devices to increase productivity. Organized into eight chapters, this book begins with an overview of the general equation for the representation of integer positive numbers. This text then examines the properties and characteristics of basic electronic components, which relates to an understanding of the operation of semiconductors. Other chapters consider the electronic circuit ar

  18. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  19. Multiple Bloch surface waves in visible region of light at the interfaces between rugate filter/rugate filter and rugate filter/dielectric slab/rugate filter

    Science.gov (United States)

    Ullah Manzoor, Habib; Manzoor, Tareq; Hussain, Masroor; Manzoor, Sanaullah; Nazar, Kashif

    2018-04-01

    Surface electromagnetic waves are the solution of Maxwell’s frequency domain equations at the interface of two dissimilar materials. In this article, two canonical boundary-value problems have been formulated to analyze the multiplicity of electromagnetic surface waves at the interface between two dissimilar materials in the visible region of light. In the first problem, the interface between two semi-infinite rugate filters having symmetric refractive index profiles is considered and in the second problem, to enhance the multiplicity of surface electromagnetic waves, a homogeneous dielectric slab of 400 nm is included between two semi-infinite symmetric rugate filters. Numerical results show that multiple Bloch surface waves of different phase speeds, different polarization states, different degrees of localization and different field profiles are propagated at the interface between two semi-infinite rugate filters. Having two interfaces when a homogeneous dielectric layer is placed between two semi-infinite rugate filters has increased the multiplicity of electromagnetic surface waves.

  20. A new distributional record of alligator pipefish, Syngnathoides biaculeatus (Bloch, 1785) along Goa, central west coast of India

    Digital Repository Service at National Institute of Oceanography (India)

    Sanaye, S.V.; Rivonker, C.U.; Ansari, Z.A; Sreepada, R.A

    Present study is based on a single male specimen of alligator pipefish, Syngnathoides biaculeatus (Bloch, 1785) collected from the bay-estuarine system of, Goa (central west coast of India) which is the new distributional record for this species. A...

  1. Single-site approximation for the s-f model of antiferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Takahashi, Masao; Nolting, Wolfgang

    2001-01-01

    For the s-f model of an antiferromagnetic semiconductor, the effect of the antiferromagnetic ordering of the localized spins on the conduction-electron state is investigated over a wide range of exchange strengths by combining the effective-medium approach with the Green's function in the 2x2 sublattice Bloch function representation. The band splitting due to the reduced magnetic Brillouin zone occurs below the Neel temperature. There is a marked effect of the thermal fluctuation of the antiferromagnetically ordered localized spins on the conduction electron at the energies near the top (bottom) of the lower- (higher-) energy subband

  2. Transversal light forces in semiconductors

    CERN Document Server

    Lindberg, M

    2003-01-01

    The transversal light force is a well established effect in atomic and molecular systems that are exposed to spatially inhomogeneous light fields. In this paper it is shown theoretically that in an excited semiconductor, containing an electron-hole plasma or excitons, a similar light force exists, if the semiconductor is exposed to an ultrashort spatially inhomogeneous light field. The analysis is based on the equations of motion for the Wigner distribution functions of charge carrier populations and interband polarizations. The results show that, while the light force on the electron-hole plasma or the excitons does exist, its effects on the kinetic behaviour of the electron-hole plasma or the excitons are different compared to the situation in an atomic or molecular system. A detailed analysis presented here traces this difference back to the principal differences between atoms and molecules on the one hand and electron-hole plasmas or excitons on the other hand.

  3. Symmetrization of mathematical model of charge transport in semiconductors

    Directory of Open Access Journals (Sweden)

    Alexander M. Blokhin

    2002-11-01

    Full Text Available A mathematical model of charge transport in semiconductors is considered. The model is a quasilinear system of differential equations. A problem of finding an additional entropy conservation law and system symmetrization are solved.

  4. On an Integral-Type Operator Acting between Bloch-Type Spaces on the Unit Ball

    Directory of Open Access Journals (Sweden)

    Stevo Stević

    2010-01-01

    Full Text Available Let 𝔹 denote the open unit ball of ℂn. For a holomorphic self-map φ of 𝔹 and a holomorphic function g in 𝔹 with g(0=0, we define the following integral-type operator: Iφgf(z=∫01ℜf(φ(tzg(tz(dt/t, z∈𝔹. Here ℜf denotes the radial derivative of a holomorphic function f in 𝔹. We study the boundedness and compactness of the operator between Bloch-type spaces ℬω and ℬμ, where ω is a normal weight function and μ is a weight function. Also we consider the operator between the little Bloch-type spaces ℬω,0 and ℬμ,0.

  5. Modeling Dzyaloshinskii-Moriya Interaction at Transition Metal Interfaces: Constrained Moment versus Generalized Bloch Theorem

    KAUST Repository

    Dong, Yao-Jun; Belabbes, Abderrezak; Manchon, Aurelien

    2017-01-01

    Dzyaloshinskii-Moriya interaction (DMI) at Pt/Co interfaces is investigated theoretically using two different first principles methods. The first one uses the constrained moment method to build a spin spiral in real space, while the second method uses the generalized Bloch theorem approach to construct a spin spiral in reciprocal space. We show that although the two methods produce an overall similar total DMI energy, the dependence of DMI as a function of the spin spiral wavelength is dramatically different. We suggest that long-range magnetic interactions, that determine itinerant magnetism in transition metals, are responsible for this discrepancy. We conclude that the generalized Bloch theorem approach is more adapted to model DMI in transition metal systems, where magnetism is delocalized, while the constrained moment approach is mostly applicable to weak or insulating magnets, where magnetism is localized.

  6. Modeling Dzyaloshinskii-Moriya Interaction at Transition Metal Interfaces: Constrained Moment versus Generalized Bloch Theorem

    KAUST Repository

    Dong, Yao-Jun

    2017-10-29

    Dzyaloshinskii-Moriya interaction (DMI) at Pt/Co interfaces is investigated theoretically using two different first principles methods. The first one uses the constrained moment method to build a spin spiral in real space, while the second method uses the generalized Bloch theorem approach to construct a spin spiral in reciprocal space. We show that although the two methods produce an overall similar total DMI energy, the dependence of DMI as a function of the spin spiral wavelength is dramatically different. We suggest that long-range magnetic interactions, that determine itinerant magnetism in transition metals, are responsible for this discrepancy. We conclude that the generalized Bloch theorem approach is more adapted to model DMI in transition metal systems, where magnetism is delocalized, while the constrained moment approach is mostly applicable to weak or insulating magnets, where magnetism is localized.

  7. Bloch Surface Waves Using Graphene Layers: An Approach toward In-Plane Photodetectors

    Directory of Open Access Journals (Sweden)

    Richa Dubey

    2018-03-01

    Full Text Available A dielectric multilayer platform was investigated as a foundation for two-dimensional optics. In this paper, we present, to the best of our knowledge, the first experimental demonstration of absorption of Bloch surface waves in the presence of graphene layers. Graphene is initially grown on a Cu foil via Chemical Vapor Deposition and transferred layer by layer by a wet-transfer method using poly(methyl methacrylate, (PMMA. We exploit total internal reflection configuration and multi-heterodyne scanning near-field optical microscopy as a far-field coupling method and near-field characterization tool, respectively. The absorption is quantified in terms of propagation lengths of Bloch surface waves. A significant drop in the propagation length of the BSWs is observed in the presence of graphene layers. The propagation length of BSWs in bare multilayer is reduced to 17 times shorter in presence of graphene monolayer, and 23 times shorter for graphene bilayer.

  8. Optimal cloning of qubits given by an arbitrary axisymmetric distribution on the Bloch sphere

    International Nuclear Information System (INIS)

    Bartkiewicz, Karol; Miranowicz, Adam

    2010-01-01

    We find an optimal quantum cloning machine, which clones qubits of arbitrary symmetrical distribution around the Bloch vector with the highest fidelity. The process is referred to as phase-independent cloning in contrast to the standard phase-covariant cloning for which an input qubit state is a priori better known. We assume that the information about the input state is encoded in an arbitrary axisymmetric distribution (phase function) on the Bloch sphere of the cloned qubits. We find analytical expressions describing the optimal cloning transformation and fidelity of the clones. As an illustration, we analyze cloning of qubit state described by the von Mises-Fisher and Brosseau distributions. Moreover, we show that the optimal phase-independent cloning machine can be implemented by modifying the mirror phase-covariant cloning machine for which quantum circuits are known.

  9. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  10. Transient photoconductivity in amorphous semiconductors

    International Nuclear Information System (INIS)

    Mpawenayo, P.

    1997-07-01

    Localized states in amorphous semiconductors are divided in disorder induced shallow trap levels and dangling bonds deep states. Dangling bonds are assumed here to be either neutral or charged and their energy distribution is a single gaussian. Here, it is shown analytically that transient photocurrent in amorphous semiconductors is fully controlled by charge carriers transitions between localized states for one part and tunneling hopping carriers on the other. Localized dangling bonds deep states act as non radiative recombination centres, while hopping tunnelling is assisted by the Coulomb interaction between defects sites. The half-width of defects distribution is the disorder parameter that determines the carrier hopping time between defects sites. The macroscopic time that explains the long decay response times observed will all types of amorphous semiconductors is duly thought to be temperature dependent. Basic equations developed by Longeaud and Kleider are solved for the general case of a semiconductor after photo-generation. It turns out that the transient photoconductivity decay has two components; one with short response times from carriers trap-release transitions between shallow levels and extended states and a hopping component made of inter-dependent exponentials whose time constants span in larger ranges depending on disorder. The photoconductivity hopping component appears as an additional term to be added to photocurrents derived from existing models. The results of the present study explain and complete the power law decay derived in the multiple trapping models developed 20 years ago only in the approximation of the short response time regime. The long response time regime is described by the hopping macroscopic time. The present model is verified for all samples of amorphous semiconductors known so far. Finally, it is proposed to improved the modulated photoconductivity calculation techniques by including the long-lasting hopping dark documents

  11. Weighted Differentiation Composition Operator from Logarithmic Bloch Spaces to Zygmund-Type Spaces

    Directory of Open Access Journals (Sweden)

    Huiying Qu

    2014-01-01

    Full Text Available Let H( denote the space of all holomorphic functions on the unit disk of ℂ, u∈H( and let  n be a positive integer, φ a holomorphic self-map of , and μ a weight. In this paper, we investigate the boundedness and compactness of a weighted differentiation composition operator φ,unf(z=u(zf(n(φ(z,f∈H(, from the logarithmic Bloch spaces to the Zygmund-type spaces.

  12. Observation of Bloch oscillations in complex PT-symmetric photonic lattices

    Science.gov (United States)

    Wimmer, Martin; Miri, Mohammed-Ali; Christodoulides, Demetrios; Peschel, Ulf

    2015-01-01

    Light propagation in periodic environments is often associated with a number of interesting and potentially useful processes. If a crystalline optical potential is also linearly ramped, light can undergo periodic Bloch oscillations, a direct outcome of localized Wannier-Stark states and their equidistant eigenvalue spectrum. Even though these effects have been extensively explored in conservative settings, this is by no means the case in non-Hermitian photonic lattices encompassing both amplification and attenuation. Quite recently, Bloch oscillations have been predicted in parity-time-symmetric structures involving gain and loss in a balanced fashion. While in a complex bulk medium, one intuitively expects that light will typically follow the path of highest amplification, in a periodic system this behavior can be substantially altered by the underlying band structure. Here, we report the first experimental observation of Bloch oscillations in parity-time-symmetric mesh lattices. We show that these revivals exhibit unusual properties like secondary emissions and resonant restoration of PT symmetry. In addition, we present a versatile method for reconstructing the real and imaginary components of the band structure by directly monitoring the light evolution during a cycle of these oscillations. PMID:26639941

  13. Metal–semiconductor nanojunctions and their rectification ...

    Indian Academy of Sciences (India)

    Using the standard equation the difference between the work functions of the metal and the semiconductor was calculated. This showed a variation with the temperature of measurement. This is explained as arising due to the effect of pressure generated as a result of thermal expansion of the metallic phases concerned ...

  14. Current responsivity of semiconductor superlattice THz-photon detectors

    DEFF Research Database (Denmark)

    Ignatov, Anatoly A.; Jauho, Antti-Pekka

    1999-01-01

    The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed for curr......The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed...... for currently available superlattice diodes show that both the magnitudes and the roll-off frequencies of the responsivity are strongly influenced by an excitation of hybrid plasma-Bloch oscillations which are found to be eigenmodes of the system in the THz-frequency band. The expected room temperature values...... of the responsivity (2–3 A/W in the 1–3 THz-frequency band) range up to several percents of the quantum efficiency e/[h-bar] omega of an ideal superconductor tunnel junction detector. Properly designed semiconductor superlattice detectors may thus demonstrate better room temperature THz-photon responsivity than...

  15. Chaotic bursting in semiconductor lasers

    Science.gov (United States)

    Ruschel, Stefan; Yanchuk, Serhiy

    2017-11-01

    We investigate the dynamic mechanisms for low frequency fluctuations in semiconductor lasers subjected to delayed optical feedback, using the Lang-Kobayashi model. This system of delay differential equations displays pronounced envelope dynamics, ranging from erratic, so called low frequency fluctuations to regular pulse packages, if the time scales of fast oscillations and envelope dynamics are well separated. We investigate the parameter regions where low frequency fluctuations occur and compute their Lyapunov spectra. Using the geometric singular perturbation theory, we study this intermittent chaotic behavior and characterize these solutions as bursting slow-fast oscillations.

  16. Series: Utilization of Differential Equations and Methods for Solving Them in Medical Physics (3).

    Science.gov (United States)

    Murase, Kenya

    2016-01-01

    In this issue, simultaneous differential equations were introduced. These differential equations are often used in the field of medical physics. The methods for solving them were also introduced, which include Laplace transform and matrix methods. Some examples were also introduced, in which Laplace transform and matrix methods were applied to solving simultaneous differential equations derived from a three-compartment kinetic model for analyzing the glucose metabolism in tissues and Bloch equations for describing the behavior of the macroscopic magnetization in magnetic resonance imaging.In the next (final) issue, partial differential equations and various methods for solving them will be introduced together with some examples in medical physics.

  17. Quantum theory of the optical and electronic properties of semiconductors

    CERN Document Server

    Haug, Hartmut

    2009-01-01

    This invaluable textbook presents the basic elements needed to understand and research into semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. Fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, the optical Stark effect, the semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz-Keldysh effects, are covered. The material is presented in sufficient detail for graduate students and researchers with a general background in quantum mechanics.This fifth edition includes an additional chapter on 'Quantum Optical Effects' where the theory of quantum optical effects in semiconductors is detailed. Besides deriving the 'semiconductor luminescence equations' and the expression for the stationary luminescence spectrum, the resu...

  18. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  19. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  20. Bloch walls and the non-ideal bose gas spectrum

    International Nuclear Information System (INIS)

    Vitiello, S.A.S.

    1986-05-01

    The quasi-particle spectrum of non-ideal Bose gas with domain walls in the condensate is investigated. The existence of such a system is determined from solutions of Gross-Pitaevskii equation which represent many-soliton systems. The walls which make the condensate non-uniform are responsible for density and velocity fields ρ(x) and υ(x) repectively. In the laboratory, the Bogoliubov spectrum, supposed to be true for an uniform condensate at rest, is changed due to the velocity field to which the quasi-particles are submited. The spectrum in the laboratory frame is obtained by considering the Galileu invariance principle and the interaction energy between the quasi-particle and its medium. The importance in considering the last two facts is illustrated by the analyse of a constant density condensate which moves uniformly in the laboratory. The many-soliton spectrum configuration and structure function are studied by the Monte Carlo method. In an approximation that assumes the quasi-particle to be point like, the condensate can be treated as locally uniform. For each event the position x of a quasi-particle and its momentum in a frame with velocity υ(x) are determined. Thus, by a convenient Galileu transformation the energy spectrum in the laboratory an be obtained. The results show a phonon spectrum which splits in two branches in the high momenta region. In this region the lower energy branch exibiths a point of minimum. Analogies with the He II are explored. (author) [pt

  1. Bloch oscillations of ultracold atoms and measurement of the fine structure constant; Oscillations de Bloch d'atomes ultrafroids et mesure de la constante de structure fine

    Energy Technology Data Exchange (ETDEWEB)

    Clade, P

    2005-10-15

    From a measurement of the recoil velocity of an atom absorbing a photon, it is possible to deduce a determination of the ratio h/m between the Planck constant and the mass of the atoms and then to deduce a value of the fine structure constant alpha. To do this measurement, we use the technique of Bloch oscillations, which allows us to transfer a large number of recoils to atoms. A velocity sensor, based on velocity selective Raman transition, enables us to measure the momentum transferred to the atoms. A measurement with a statistical uncertainty of 4.4 10{sup -9}, in conjunction with a careful study of systematic effects (5 10{sup -9}), has led us to a determination of alpha with an uncertainty of 6.7 10{sup -9}: {alpha}{sup -1}(Rb) = 137.03599878 (91). This uncertainty is similar to the uncertainty of the best determinations of alpha based on atom interferometry. (author)

  2. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  3. Breakdown of rotational symmetry at semiconductor interfaces; a microscopic description of valence subband mixing

    International Nuclear Information System (INIS)

    Cortez, S.; Krebs, O.; Voisin, P.

    2000-01-01

    The recently discovered in-plane optical anisotropy of [001]-grown quantum wells offers a new theoretical and experimental insight into the electronic properties of semiconductor interfaces. We first discuss the coupling of X and Y valence bands due to the breakdown of rotation inversion symmetry at a semiconductor hetero-interface, with special attention to its dependence on effective parameters such as valence band offset. The intracell localization of Bloch functions is explained from simple theoretical arguments and evaluated numerically from a pseudo-potential microscopic model. The role of envelope functions is considered, and we discuss the specific case of non-common atom interfaces. Experimental results and applications to interface characterization are presented. These calculations give a microscopic justification, and establish the limits of the heuristic 'H BF ' model. (author)

  4. Prolongation Loop Algebras for a Solitonic System of Equations

    Directory of Open Access Journals (Sweden)

    Maria A. Agrotis

    2006-11-01

    Full Text Available We consider an integrable system of reduced Maxwell-Bloch equations that describes the evolution of an electromagnetic field in a two-level medium that is inhomogeneously broadened. We prove that the relevant Bäcklund transformation preserves the reality of the n-soliton potentials and establish their pole structure with respect to the broadening parameter. The natural phase space of the model is embedded in an infinite dimensional loop algebra. The dynamical equations of the model are associated to an infinite family of higher order Hamiltonian systems that are in involution. We present the Hamiltonian functions and the Poisson brackets between the extended potentials.

  5. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  6. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  7. Quantum control and process tomography of a semiconductor quantum dot hybrid qubit.

    Science.gov (United States)

    Kim, Dohun; Shi, Zhan; Simmons, C B; Ward, D R; Prance, J R; Koh, Teck Seng; Gamble, John King; Savage, D E; Lagally, M G; Friesen, Mark; Coppersmith, S N; Eriksson, Mark A

    2014-07-03

    The similarities between gated quantum dots and the transistors in modern microelectronics--in fabrication methods, physical structure and voltage scales for manipulation--have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. Although quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for important future applications, such as factoring. Furthermore, scalability and manufacturability are enhanced when qubits are as simple as possible. Previous work has increased the speed of spin qubit rotations by making use of integrated micromagnets, dynamic pumping of nuclear spins or the addition of a third quantum dot. Here we demonstrate a qubit that is a hybrid of spin and charge. It is simple, requiring neither nuclear-state preparation nor micromagnets. Unlike previous double-dot qubits, the hybrid qubit enables fast rotations about two axes of the Bloch sphere. We demonstrate full control on the Bloch sphere with π-rotation times of less than 100 picoseconds in two orthogonal directions, which is more than an order of magnitude faster than any other double-dot qubit. The speed arises from the qubit's charge-like characteristics, and its spin-like features result in resistance to decoherence over a wide range of gate voltages. We achieve full process tomography in our electrically controlled semiconductor quantum dot qubit, extracting high fidelities of 85 per cent for X rotations (transitions between qubit states) and 94 per cent for Z rotations (phase accumulation between qubit states).

  8. Magnon localization and Bloch oscillations in finite Heisenberg spin chains in an inhomogeneous magnetic field.

    Science.gov (United States)

    Kosevich, Yuriy A; Gann, Vladimir V

    2013-06-19

    We study the localization of magnon states in finite defect-free Heisenberg spin-1/2 ferromagnetic chains placed in an inhomogeneous magnetic field with a constant spatial gradient. Continuous transformation from the extended magnon states to the localized Wannier-Zeeman states in a finite spin chain placed in an inhomogeneous field is described both analytically and numerically. We describe for the first time the non-monotonic dependence of the energy levels of magnons, both long and short wavelength, on the magnetic field gradient, which is a consequence of magnon localization in a finite spin chain. We show that, in contrast to the destruction of the magnon band and the establishment of the Wannier-Stark ladder in a vanishingly small field gradient in an infinite chain, the localization of magnon states at the chain ends preserves the memory of the magnon band. Essentially, the localization at the lower- or higher-field chain end resembles the localization of the positive- or negative-effective-mass band quasiparticles. We also show how the beat dynamics of coherent superposition of extended spin waves in a finite chain in a homogeneous or weakly inhomogeneous field transforms into magnon Bloch oscillations of the superposition of localized Wannier-Zeeman states in a strongly inhomogeneous field. We provide a semiclassical description of the magnon Bloch oscillations and show that the correspondence between the quantum and semiclassical descriptions is most accurate for Bloch oscillations of the magnon coherent states, which are built from a coherent superposition of a large number of the nearest-neighbour Wannier-Zeeman states.

  9. Magnon localization and Bloch oscillations in finite Heisenberg spin chains in an inhomogeneous magnetic field

    International Nuclear Information System (INIS)

    Kosevich, Yuriy A; Gann, Vladimir V

    2013-01-01

    We study the localization of magnon states in finite defect-free Heisenberg spin-1/2 ferromagnetic chains placed in an inhomogeneous magnetic field with a constant spatial gradient. Continuous transformation from the extended magnon states to the localized Wannier–Zeeman states in a finite spin chain placed in an inhomogeneous field is described both analytically and numerically. We describe for the first time the non-monotonic dependence of the energy levels of magnons, both long and short wavelength, on the magnetic field gradient, which is a consequence of magnon localization in a finite spin chain. We show that, in contrast to the destruction of the magnon band and the establishment of the Wannier–Stark ladder in a vanishingly small field gradient in an infinite chain, the localization of magnon states at the chain ends preserves the memory of the magnon band. Essentially, the localization at the lower- or higher-field chain end resembles the localization of the positive- or negative-effective-mass band quasiparticles. We also show how the beat dynamics of coherent superposition of extended spin waves in a finite chain in a homogeneous or weakly inhomogeneous field transforms into magnon Bloch oscillations of the superposition of localized Wannier–Zeeman states in a strongly inhomogeneous field. We provide a semiclassical description of the magnon Bloch oscillations and show that the correspondence between the quantum and semiclassical descriptions is most accurate for Bloch oscillations of the magnon coherent states, which are built from a coherent superposition of a large number of the nearest-neighbour Wannier–Zeeman states. (paper)

  10. Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces

    International Nuclear Information System (INIS)

    Birner, Stefan

    2011-01-01

    The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano 3 software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano 3 software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model to recently

  11. Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Birner, Stefan

    2011-11-15

    The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano{sup 3} software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano{sup 3} software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model

  12. Motives and algebraic cycles a celebration in honour of Spencer J. Bloch

    CERN Document Server

    Jeu, Rob de; Lewis, James D

    2009-01-01

    Spencer J. Bloch has, and continues to have, a profound influence on the subject of Algebraic K-Theory, Cycles and Motives. This book, which is comprised of a number of independent research articles written by leading experts in the field, is dedicated in his honour, and gives a snapshot of the current and evolving nature of the subject. Some of the articles are written in an expository style, providing a perspective on the current state of the subject to those wishing to learn more about it. Others are more technical, representing new developments and making them especially interesting to res

  13. Third harmonic generation by Bloch-oscillating electrons in a quasioptical array

    International Nuclear Information System (INIS)

    Ghosh, A.W.; Wanke, M.C.; Allen, S.J.; Wilkins, J.W.

    1999-01-01

    We compute the third harmonic field generated by Bloch-oscillating electrons in a quasioptical array of superlattices under THz irradiation. The third harmonic power transmitted oscillates with the internal electric field, with nodes associated with Bessel functions in eEd/ℎω. The nonlinear response of the array causes the output power to be a multivalued function of the incident laser power. The output can be optimized by adjusting the frequency of the incident pulse to match one of the Fabry-Pacute erot resonances in the substrate. Within the transmission-line model of the array, the maximum conversion efficiency is 0.1%. copyright 1999 American Institute of Physics

  14. Manipulation of Bloch surface waves: from subwavelength focusing to nondiffracting beam

    Science.gov (United States)

    Kim, Myun-Sik; Herzig, Hans Peter

    2018-01-01

    We present a different type of electromagnetic surface wave than a surface plasmon polariton (SPP), called Bloch surface wave (BSW). BSWs are sustained by dielectric multilayers, and therefore they do not suffer from dissipation. Their propagation length is unbeatably long, e.g., over several millimeters. Thanks to this feature, larger integrations of 2D photonic chips are realizable. To do this, 2D optical components and corresponding techniques are necessary to manipulate in-plane propagation of surface waves. We overview recent progresses of the BSW research on manipulation techniques and developed components. Our study will provide a good guideline of the BSW components for users.

  15. Identification of Bloch-modes in hollow-core Photonic Crystal Fiber cladding

    DEFF Research Database (Denmark)

    Couny, F.; Benabid, F.; Roberts, John

    2007-01-01

    We report on the experimental visualization of the cladding Bloch-modes of a hollow-core photonic crystal fiber. Both spectral and spatial field information is extracted using the approach, which is based on measurement of the near-field and Fresnel-zone that results after propagation over a short...... length of fiber. A detailed study of the modes near the edges of the band gap shows that it is formed by the influence of three types of resonator: the glass interstitial apex, the silica strut which joins the neighboring apexes, and the air hole. The cladding electromagnetic field which survives...

  16. Near-field imaging of light propagation in photonic crystal waveguides: Explicit role of Bloch harmonics

    DEFF Research Database (Denmark)

    Bozhevolnyi, Sergey I.; Volkov, V.S.; Søndergaard, Thomas

    2002-01-01

    We employ a collection scanning near-field optical microscope (SNOM) to image the propagation of light at telecommunication wavelengths along straight and bent regions of silicon-on-insulator photonic crystal waveguides (PCWs) formed by removing a single row of holes in the triangular 410-nm...... the interference between a quasihomogeneous background field and Bloch harmonics of the PCW mode, we account for spatial frequency spectra of the intensity variations and determine the propagation constant of the PCW mode at 1520 nm. The possibilities and limitations of SNOM imaging for the characterization...

  17. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  18. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  19. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  20. Surface Acoustic Bloch Oscillations, the Wannier-Stark Ladder, and Landau-Zener Tunneling in a Solid

    Science.gov (United States)

    de Lima, M. M., Jr.; Kosevich, Yu. A.; Santos, P. V.; Cantarero, A.

    2010-04-01

    We present the experimental observation of Bloch oscillations, the Wannier-Stark ladder, and Landau-Zener tunneling of surface acoustic waves in perturbed grating structures on a solid substrate. A model providing a quantitative description of our experimental observations, including multiple Landau-Zener transitions of the anticrossed surface acoustic Wannier-Stark states, is developed. The use of a planar geometry for the realization of the Bloch oscillations and Landau-Zener tunneling allows a direct access to the elastic field distribution. The vertical surface displacement has been measured by interferometry.

  1. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  2. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  3. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  4. Phonon structures of GaN-based random semiconductor alloys

    Science.gov (United States)

    Zhou, Mei; Chen, Xiaobin; Li, Gang; Zheng, Fawei; Zhang, Ping

    2017-12-01

    Accurate modeling of thermal properties is strikingly important for developing next-generation electronics with high performance. Many thermal properties are closely related to phonon dispersions, such as sound velocity. However, random substituted semiconductor alloys AxB1-x usually lack translational symmetry, and simulation with periodic boundary conditions often requires large supercells, which makes phonon dispersion highly folded and hardly comparable with experimental results. Here, we adopt a large supercell with randomly distributed A and B atoms to investigate substitution effect on the phonon dispersions of semiconductor alloys systematically by using phonon unfolding method [F. Zheng, P. Zhang, Comput. Mater. Sci. 125, 218 (2016)]. The results reveal the extent to which phonon band characteristics in (In,Ga)N and Ga(N,P) are preserved or lost at different compositions and q points. Generally, most characteristics of phonon dispersions can be preserved with indium substitution of gallium in GaN, while substitution of nitrogen with phosphorus strongly perturbs the phonon dispersion of GaN, showing a rapid disintegration of the Bloch characteristics of optical modes and introducing localized impurity modes. In addition, the sound velocities of both (In,Ga)N and Ga(N,P) display a nearly linear behavior as a function of substitution compositions. Supplementary material in the form of one pdf file available from the Journal web page at http://https://doi.org/10.1140/epjb/e2017-80481-0.

  5. Many-particle theory of optical properties in low-dimensional nanostructures. Dynamics in single-walled carbon nanotubes and semiconductor quantum dots

    International Nuclear Information System (INIS)

    Malic, Ermin

    2008-01-01

    This work focuses on the theoretical investigation of optical properties of low-dimensional nanostructures, specifically single-walled carbon nanotubes (CNTs) and self-assembled InAs/GaAs quantum dots (QDs). The density-matrix formalism is applied to explain recent experimental results and to give insight into the underlying physics. A microscopic calculation of the absorption coefficient and the Rayleigh scattering cross section is performed by a novel approach combining the density-matrix formalism with the tight-binding wave functions. The calculated spectra of metallic nanotubes show a double-peaked structure resulting from the trigonal warping effect. The intensity ratios of the four lowest-lying transitions in both absorption and Rayleigh spectra can be explained by the different behavior of the optical matrix elements along the high-symmetry lines K-Γ and K-M. The Rayleigh line shape is predicted to be asymmetric, with an enhanced cross section for lower photon energies arising from non-resonant contributions of the optical susceptibility. Furthermore, the Coulomb interaction is shown to be maximal when the momentum transfer is low. For intersubband processes with a perpendicular momentum transfer, the coupling strength is reduced to less than 5%. The chirality and diameter dependence of the excitonic binding energy and the transition frequency are presented in Kataura plots. Furthermore, the influence of the surrounding environment on the optical properties of CNTs is investigated. Extending the confinement to all three spatial dimensions, semiconductor Bloch equation are derived to describe the dynamics in QD semiconductor lasers and amplifiers. A detailed microscopic analysis of the nonlinear turn-on dynamics of electrically pumped InAs/GaAs QD lasers is performed, showing the generation of relaxation oscillations on a nanosecond time scale in both the photon and charge carrier density. The theory predicts a strong damping of relaxation oscillations

  6. Many-particle theory of optical properties in low-dimensional nanostructures. Dynamics in single-walled carbon nanotubes and semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Malic, Ermin

    2008-09-02

    This work focuses on the theoretical investigation of optical properties of low-dimensional nanostructures, specifically single-walled carbon nanotubes (CNTs) and self-assembled InAs/GaAs quantum dots (QDs). The density-matrix formalism is applied to explain recent experimental results and to give insight into the underlying physics. A microscopic calculation of the absorption coefficient and the Rayleigh scattering cross section is performed by a novel approach combining the density-matrix formalism with the tight-binding wave functions. The calculated spectra of metallic nanotubes show a double-peaked structure resulting from the trigonal warping effect. The intensity ratios of the four lowest-lying transitions in both absorption and Rayleigh spectra can be explained by the different behavior of the optical matrix elements along the high-symmetry lines K-{gamma} and K-M. The Rayleigh line shape is predicted to be asymmetric, with an enhanced cross section for lower photon energies arising from non-resonant contributions of the optical susceptibility. Furthermore, the Coulomb interaction is shown to be maximal when the momentum transfer is low. For intersubband processes with a perpendicular momentum transfer, the coupling strength is reduced to less than 5%. The chirality and diameter dependence of the excitonic binding energy and the transition frequency are presented in Kataura plots. Furthermore, the influence of the surrounding environment on the optical properties of CNTs is investigated. Extending the confinement to all three spatial dimensions, semiconductor Bloch equation are derived to describe the dynamics in QD semiconductor lasers and amplifiers. A detailed microscopic analysis of the nonlinear turn-on dynamics of electrically pumped InAs/GaAs QD lasers is performed, showing the generation of relaxation oscillations on a nanosecond time scale in both the photon and charge carrier density. The theory predicts a strong damping of relaxation oscillations

  7. Nonresonant Faraday rotation in glassy semiconductors

    Science.gov (United States)

    van den Keybus, P.; Grevendonk, W.

    1986-06-01

    Nonresonant interband Faraday rotation in amorphous semiconductors, as a function of photon energy, may be described by an equation derived for direct transitions in crystalline semiconductors. In this paper it is shown how this equation may be obtained for the former case also, assuming a parabolic density of states function N(E) and a correlation between valence- and conduction-band states. The analysis of experiments on chalcogenide glasses reveals a Faraday-rotation energy gap EFRg that is significantly larger than the optical gap Eoptg. The effect is attributed to transitions between extended states, so that it is meaningful to compare EFRg with the mobility gap Eμg. For oxide glasses both gaps are comparable but for chalcogenide glasses EFRg is too large by a few tenths of 1 eV.

  8. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  9. Introduction to Semiconductor Devices

    Science.gov (United States)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  10. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  11. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  12. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  13. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  14. Notes on the genus Amphiprion Bloch & Schneider, 1801 (Teleostei: Pomacentridae) and its host sea anemones in the Seychelles

    NARCIS (Netherlands)

    Hartog, den J.C.

    1997-01-01

    The genus Amphiprion Bloch & Schneider, 1801, is represented in the Seychelles by two species, A. akallopisos Bleeker, 1853, and the endemic A. fuscocaudatus Allen, 1972. Throughout its distributional range Amphiprion akallopisos has exclusively been recorded to associate with the clownfish anemones

  15. Boundedness and compactness of a new product-type operator from a general space to Bloch-type spaces

    Directory of Open Access Journals (Sweden)

    Stevo Stević

    2016-09-01

    Full Text Available Abstract We characterize the boundedness and compactness of a product-type operator, which, among others, includes all the products of the single composition, multiplication, and differentiation operators, from a general space to Bloch-type spaces. We also give some upper and lower bounds for the norm of the operator.

  16. Permittivity and Permeability for Floquet-Bloch Space Harmonics in Infinite 1D Magneto-Dielectric Periodic Structures

    DEFF Research Database (Denmark)

    Breinbjerg, Olav; Yaghjian, Arthur D.

    2014-01-01

    -Bloch space harmonics. We discuss how space harmonic permittivity and permeability can be expressed in seemingly different though equivalent forms, and we investigate these parameters of the zeroeth order space harmonic for a particular 1D periodic structure that is based on a previously reported 3D periodic...

  17. Design of Slow and Fast Light Photonic Crystal Waveguides for Single-photon Emission Using a Bloch Mode Expansion Technique

    DEFF Research Database (Denmark)

    de Lasson, Jakob Rosenkrantz; Rigal, B.; Kapon, E.

    We design slow and fast light photonic crystal waveguides for single-photon emission using a Bloch mode expansion and scattering matrix technique. We propose slow light designs that increase the group index-waveguide mode volume ratio for larger Purcell enhancement, and address efficient slow-to-...

  18. Transient electro-thermal modeling of bipolar power semiconductor devices

    CERN Document Server

    Gachovska, Tanya Kirilova; Du, Bin

    2013-01-01

    This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusio

  19. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  20. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  1. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  2. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  3. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  4. Quantum mechanical description of the two fluid model of liquid /sup 4/He solving the Bloch equation

    International Nuclear Information System (INIS)

    Fung, P.C.W.; Lam, C.C.

    1986-01-01

    The authors apply the U-matrix theory recently developed (Lam and Fung, Phys. Rev. A, vol.27, p.1760, 1983) to study certain physical properties of liquid /sup 4/He across a range of temperatures including the lambda -point. They propose a model for the chemical potential mu which is constant above T/sub lambda / but is a function of T below T/sub lambda /. They have discovered that the super-particles 'emerge' mathematically due to the uncommutability of the Hamiltonians at different temperatures, leading to a quantum mechanical description of the two-fluid model. Using the two-particle potential function deduced from scattering data, they have calculated numerically the approximate values of the number density for a range of temperatures starting from T/sub lambda /, taking the hard-core diameter Delta , 'effective chemical potential' mu ' as parameters

  5. Accumulation effects in modulation spectroscopy with high-repetition-rate pulses: Recursive solution of optical Bloch equations

    Science.gov (United States)

    Osipov, Vladimir Al.; Pullerits, Tõnu

    2017-10-01

    Application of the phase-modulated pulsed light for advance spectroscopic measurements is the area of growing interest. The phase modulation of the light causes modulation of the signal. Separation of the spectral components of the modulations allows to distinguish the contributions of various interaction pathways. The lasers with high repetition rate used in such experiments can lead to appearance of the accumulation effects, which become especially pronounced in systems with long-living excited states. Recently it was shown that such accumulation effects can be used to evaluate parameters of the dynamical processes in the material. In this work we demonstrate that the accumulation effects are also important in the quantum characteristics measurements provided by modulation spectroscopy. In particular, we consider a model of quantum two-level system driven by a train of phase-modulated light pulses, organized in analogy with the two-dimensional spectroscopy experiments. We evaluate the harmonics' amplitudes in the fluorescent signal and calculate corrections appearing from the accumulation effects. We show that the corrections can be significant and have to be taken into account at analysis of experimental data.

  6. Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices

    CERN Document Server

    Merten, K; Bulirsch, R

    1990-01-01

    Numerical simulation and modelling of electric circuits and semiconductor devices are of primal interest in today's high technology industries. At the Oberwolfach Conference more than forty scientists from around the world, in­ cluding applied mathematicians and electrical engineers from industry and universities, presented new results in this area of growing importance. The contributions to this conference are presented in these proceedings. They include contributions on special topics of current interest in circuit and device simulation, as well as contributions that present an overview of the field. In the semiconductor area special lectures were given on mixed finite element methods and iterative procedures for the solution of large linear systems. For three dimensional models new discretization procedures including software packages were presented. Con­ nections between semiconductor equations and the Boltzmann equation were shown as well as relations to the quantum transport equation. Other issues dis...

  7. Bloch oscillations of ultracold atoms and measurement of the fine structure constant

    International Nuclear Information System (INIS)

    Clade, P.

    2005-10-01

    From a measurement of the recoil velocity of an atom absorbing a photon, it is possible to deduce a determination of the ratio h/m between the Planck constant and the mass of the atoms and then to deduce a value of the fine structure constant alpha. To do this measurement, we use the technique of Bloch oscillations, which allows us to transfer a large number of recoils to atoms. A velocity sensor, based on velocity selective Raman transition, enables us to measure the momentum transferred to the atoms. A measurement with a statistical uncertainty of 4.4 10 -9 , in conjunction with a careful study of systematic effects (5 10 -9 ), has led us to a determination of alpha with an uncertainty of 6.7 10 -9 : α -1 (Rb) = 137.03599878 (91). This uncertainty is similar to the uncertainty of the best determinations of alpha based on atom interferometry. (author)

  8. Effects of gamma radiations on certain tissues of heteropneustes fossils bloch

    International Nuclear Information System (INIS)

    Purohit, R.K.; Rathore, N.; Ahluwalia, P.; Srivastava, M.; Gupta, M.L.

    1992-01-01

    In the present investigation effect of gamma radiation on certain tissues (kidney, stomach and gills) of Heteropneustes fossilis Bloch, an Indian Cat fish, were studied. The fish were irradiated with 10 Gy of gamma radiations at the dose rate of 1.60 Gy/minute from a 60 Co source. Five fish were autopsied at each post-irradiation time of 1,2,3,7,15 and 30 days. Radiation induced histopathology was observed in all the tissues studied. The radio lesions appeared on day-1 after exposure which became exaggerated on day-2 and 3. Signs of recovery were noticed on day-7 which progressed on day-15 and normal histology was observed on day-30. (author). 18 refs

  9. The Bergman spaces, the Bloch space and the pluriharmonic conjugates in the unit ball of Cn

    International Nuclear Information System (INIS)

    Shi Jihuai.

    1989-06-01

    It has been proved that if f is holomorphic in the unit ball B of C m , then f is an element of L p (B,dν) if all the functions (1 - |z| 2 ) m (D n f)(z) with |α| = m are in L p (B,dν). This method can only deal with the case of p ≥ 1. In this paper, we give a new approach to prove that the above result holds for all p is an element of (0, ∞). A simple proof about the characterization of the Bloch space will be given. As a by-product of our approach, we generalize a theorem to the unit ball of C m , and use this result to generalize some theorems about the pluriharmonic conjugates to the case 0 < p < 1. 9 refs

  10. Generalized Bloch Theorem for Complex Periodic Potentials - A Powerful Application to Quantum Transport Calculations

    International Nuclear Information System (INIS)

    Zhang, Xiaoguang; Varga, Kalman; Pantelides, Sokrates T

    2007-01-01

    Band-theoretic methods with periodically repeated supercells have been a powerful approach for ground-state electronic structure calculations, but have not so far been adapted for quantum transport problems with open boundary conditions. Here we introduce a generalized Bloch theorem for complex periodic potentials and use a transfer-matrix formulation to cast the transmission probability in a scattering problem with open boundary conditions in terms of the complex wave vectors of a periodic system with absorbing layers, allowing a band technique for quantum transport calculations. The accuracy and utility of the method is demonstrated by the model problems of the transmission of an electron over a square barrier and the scattering of a phonon in an inhomogeneous nanowire. Application to the resistance of a twin boundary in nanocrystalline copper yields excellent agreement with recent experimental data

  11. Bloch surface wave structures for high sensitivity detection and compact waveguiding

    Science.gov (United States)

    Khan, Muhammad Umar; Corbett, Brian

    2016-01-01

    Resonant propagating waves created on the surface of a dielectric multilayer stack, called Bloch surface waves (BSW), can be designed for high sensitivity monitoring of the adjacent refractive index as an alternative platform to the metal-based surface plasmon resonance (SPR) sensing. The resonant wavelength and polarization can be designed by engineering of the dielectric layers unlike the fixed resonance of SPR, while the wide bandwidth low loss of dielectrics permits sharper resonances, longer propagation lengths and thus their use in waveguiding devices. The transparency of the dielectrics allows the excitation and monitoring of surface-bound fluorescent molecules. We review the recent developments in this technology. We show the advantages that can be obtained by using high index contrast layered structures. Operating at 1550 nm wavelengths will allow the BSW sensors to be implemented in the silicon photonics platform where active waveguiding can be used in the realization of compact planar integrated circuits for multi-parameter sensing.

  12. Illuminating "spin-polarized" Bloch wave-function projection from degenerate bands in decomposable centrosymmetric lattices

    Science.gov (United States)

    Li, Pengke; Appelbaum, Ian

    2018-03-01

    The combination of space inversion and time-reversal symmetries results in doubly degenerate Bloch states with opposite spin. Many lattices with these symmetries can be constructed by combining a noncentrosymmetric potential (lacking this degeneracy) with its inverted copy. Using simple models, we unravel the evolution of local spin splitting during this process of inversion symmetry restoration, in the presence of spin-orbit interaction and sublattice coupling. Importantly, through an analysis of quantum mechanical commutativity, we examine the difficulty of identifying states that are simultaneously spatially segregated and spin polarized. We also explain how surface-sensitive experimental probes (such as angle-resolved photoemission spectroscopy, or ARPES) of "hidden spin polarization" in layered materials are susceptible to unrelated spin splitting intrinsically induced by broken inversion symmetry at the surface.

  13. Bloch oscillations of quasispin polaritons in a magneto-optically controlled atomic ensemble

    International Nuclear Information System (INIS)

    Jiang, Chang; Lu, Jing; Zhou, Lan

    2012-01-01

    We consider the propagation of quantized polarized light in a magneto-optically-manipulated atomic ensemble with a tripod configuration. A polariton formalism is applied when the medium is subjected to a washboard magnetic field under electromagnetically-induced transparency. The dark-state polariton with multiple components is achieved. We analyze the quantum dynamics of the dark-state polariton using experimental data from the rubidium D1-line. It is found that one component propagates freely, however the wave packet trajectory of the other component performs Bloch oscillations. -- Highlights: ► We study the wave–particle dualism of quasiparticles in a magneto-optical medium. ► We generate a “spin”-component dark-state polariton. ► Magnetic fields lead to oscillation and free propagation of a dark-state polariton. ► Our approach shows the role of entanglement of degrees of freedom of photons.

  14. Bloch oscillations of quasispin polaritons in a magneto-optically controlled atomic ensemble

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Chang [Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, and Department of Physics, Hunan Normal University, Changsha 410081 (China); Lu, Jing, E-mail: lujing@hunnu.edu.cn [Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, and Department of Physics, Hunan Normal University, Changsha 410081 (China); Zhou, Lan [Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, and Department of Physics, Hunan Normal University, Changsha 410081 (China)

    2012-10-01

    We consider the propagation of quantized polarized light in a magneto-optically-manipulated atomic ensemble with a tripod configuration. A polariton formalism is applied when the medium is subjected to a washboard magnetic field under electromagnetically-induced transparency. The dark-state polariton with multiple components is achieved. We analyze the quantum dynamics of the dark-state polariton using experimental data from the rubidium D1-line. It is found that one component propagates freely, however the wave packet trajectory of the other component performs Bloch oscillations. -- Highlights: ► We study the wave–particle dualism of quasiparticles in a magneto-optical medium. ► We generate a “spin”-component dark-state polariton. ► Magnetic fields lead to oscillation and free propagation of a dark-state polariton. ► Our approach shows the role of entanglement of degrees of freedom of photons.

  15. Dynamics of Peregrine combs and Peregrine walls in an inhomogeneous Hirota and Maxwell-Bloch system

    Science.gov (United States)

    Wang, Lei; Wang, Zi-Qi; Sun, Wen-Rong; Shi, Yu-Ying; Li, Min; Xu, Min

    2017-06-01

    Under investigation in this paper is an inhomogeneous Hirota-Maxwell-Bloch (IHMB) system which can describe the propagation of optical solitons in an erbium-doped optical fiber. The breather multiple births (BMBs) are derived with periodically varying group velocity dispersion (GVD) coefficients. Under large periodic modulations in the GVD coefficient of IHMB system, the Peregrine comb (PC) solution is produced, which can be viewed as the limiting case of the BMBs. When the amplitude of the modulation satisfies a special condition, the Peregrine wall (PW) that can be regarded as an intermediate state between rogue wave and PC is obtained. The effects of the third-order dispersion on the spatiotemporal characteristics of PCs and PWs are studied. Our results may be useful for the experimental control and manipulation of the formation of generalized Peregrine rogue waves in inhomogeneous erbium-doped optical fiber.

  16. Exact solutions for fermionic Green's functions in the Bloch-Nordsieck approximation of QED

    International Nuclear Information System (INIS)

    Kernemann, A.; Stefanis, N.G.

    1989-01-01

    A set of new closed-form solutions for fermionic Green's functions in the Bloch-Nordsieck approximation of QED is presented. A manifestly covariant phase-space path-integral method is applied for calculating the n-fermion Green's function in a classical external field. In the case of one and two fermions, explicit expressions for the full Green's functions are analytically obtained, with renormalization carried out in the modified minimal subtraction scheme. The renormalization constants and the corresponding anomalous dimensions are determined. The mass-shell behavior of the two-fermion Green's function is investigated in detail. No assumptions are made concerning the structure of asymptotic states and no IR cutoff is used in the calculations

  17. Violation of Bloch's Law That Specifies Reciprocity of Intensity and Duration with Brief Light Flashes

    Directory of Open Access Journals (Sweden)

    Ernest Greene

    2013-12-01

    Full Text Available For more than a century researchers have been reporting that the visual impact of a very brief flash is determined by the quantity of photons that the flash delivers. This has been variously described as the Bunsen-Roscoe Law or Bloch's Law, often specified as reciprocity of intensity × duration. Prior research found no evidence for such reciprocity when microsecond-duration flashes from a light-emitting diode array were used to display the major contours of nameable shapes. The present work tested with flash durations ranging up to 100 ms and also found no reciprocity. This departure from classic principles might be due to the specific range of wavelengths of the light-emitting diodes and to a mesopic level of ambient light, which together would preclude activation of rods. The reciprocity of intensity and duration may only be valid with full dark adaptation and very dim flashes that activate rods.

  18. Bloch surface waves confined in one dimension with a single polymeric nanofibre

    Science.gov (United States)

    Wang, Ruxue; Xia, Hongyan; Zhang, Douguo; Chen, Junxue; Zhu, Liangfu; Wang, Yong; Yang, Erchan; Zang, Tianyang; Wen, Xiaolei; Zou, Gang; Wang, Pei; Ming, Hai; Badugu, Ramachandram; Lakowicz, Joseph R.

    2017-02-01

    Polymeric fibres with small radii (such as ≤125 nm) are delicate to handle and should be laid down on a solid substrate to obtain practical devices. However, placing these nanofibres on commonly used glass substrates prevents them from guiding light. In this study, we numerically and experimentally demonstrate that when the nanofibre is placed on a suitable dielectric multilayer, it supports a guided mode, a Bloch surface wave (BSW) confined in one dimension. The physical origin of this new mode is discussed in comparison with the typical two-dimensional BSW mode. Polymeric nanofibres are easily fabricated to contain fluorophores, which make the dielectric nanofibre and multilayer configuration suitable for developing a large range of new nanometric scale devices, such as processor-memory interconnections, devices with sensitivity to target analytes, incident polarization and multi-colour BSW modes.

  19. Differential equations inverse and direct problems

    CERN Document Server

    Favini, Angelo

    2006-01-01

    DEGENERATE FIRST ORDER IDENTIFICATION PROBLEMS IN BANACH SPACES A NONISOTHERMAL DYNAMICAL GINZBURG-LANDAU MODEL OF SUPERCONDUCTIVITY. EXISTENCE AND UNIQUENESS THEOREMSSOME GLOBAL IN TIME RESULTS FOR INTEGRODIFFERENTIAL PARABOLIC INVERSE PROBLEMSFOURTH ORDER ORDINARY DIFFERENTIAL OPERATORS WITH GENERAL WENTZELL BOUNDARY CONDITIONSTUDY OF ELLIPTIC DIFFERENTIAL EQUATIONS IN UMD SPACESDEGENERATE INTEGRODIFFERENTIAL EQUATIONS OF PARABOLIC TYPE EXPONENTIAL ATTRACTORS FOR SEMICONDUCTOR EQUATIONSCONVERGENCE TO STATIONARY STATES OF SOLUTIONS TO THE SEMILINEAR EQUATION OF VISCOELASTICITY ASYMPTOTIC BEHA

  20. THE ACTION OF CORAGEN INSECTICIDE ON CERTAIN PHYSIOLOGICAL BIOMARKERS ON CARASSIUS AURATUS GIBELIO BLOCH L. 1758

    Directory of Open Access Journals (Sweden)

    Claudiu Alexandru Baciu

    2015-12-01

    Full Text Available In our researches we have determined the variation of certain physiological indexes, such as the oxygen consume, the breathing rhythm, the glycaemia and the number of red blood cells under the action of Coragen insecticide on Carassius auratus gibelio Bloch. Under the action of Coragen, we have registered significant changes in the oxygen consume, the breathing rhythm, the number of red blood cells and glycemia at the Carassius auratus gibelio Bloch items, considered as answers to the stress provoked by emissions. The highest variations of the physiological indexes, from the perspective of the percentage, were noticed at the glycemia, which at the mark was 28 mg/dl, and in the treated sample, with 0.1 ml/l Coragen is 42 mg/dl, representing a 50% growth and at the breathing rhythm in 24 hours, where values significantly decreased with 41.18% at the concentration of 0.07 ml/l and with 39.33% at the concentrations of 0.05 and 0.1 ml/l Coragen. The slightest variations of the physiological indexes, from the perspective of percentage, were noticed at the oxygen consumption, which, at the mark is of 55.302 ml oxygen/kg/hour, and for the treated sample, with 0.1 ml/l Coragen is 34.81 ml oxygen/kg/hour, representing a decrease of 37.06% in 24 hours and the number of red blood cells, where the values have significantly decrease with 9.58%, 13.48%, respectively 18.44% for the concentrations of 0.05, 0.07 and 0.1 ml/l Coragen.

  1. A Greenian approach to the solution of the Schroedinger equation for periodic lattice potentials

    International Nuclear Information System (INIS)

    Minelli, T.A.

    1976-01-01

    A modified structural Green's function (MSGF), exploiting all the information contained in the previously solved Schroedinger equation for the electron interacting with a single lattice site, has been introduced and used in order to obtain, from a Dyson-type equation, a kernel whose poles and residues give the E-vs.-k relation and, respectively, the Bloch functions. Such a formulation suggests an alternative technique for the approximate solution of the KKR equations. The MSGF formalism has been also used in order to determine the structure constants of a one-dimensional lattice in a general representation

  2. Simulation of semiconductor devices

    International Nuclear Information System (INIS)

    Oriato, D.

    2001-09-01

    In this thesis a drift diffusion model coupled with self-consistent solutions of Poisson's and Schroedinger's equations, is developed and used to investigate the operation of Gunn diodes and GaN-based LEDs. The model also includes parameters derived from Monte Carlo calculations of the simulated devices. In this way the characteristics of a Monte Carlo approach and of a quantum solver are built into a fast and flexible drift-diffusion model that can be used for testing a large number of heterostructure designs in a time-effective way. The full model and its numerical implementation are described in chapter 2. In chapter 3 the theory of Gunn diodes is presented. A basic model of the dynamics of domain formation and domain transport is described with particular regard to accumulation and dipole domains. Several modes of operation of the Gunn device are described, varying from the resonance mode to the quenched mode. Details about transferred electron devices and negative differential resistance in semiconductor materials are given. In chapter 4 results from the simulation of a simple conventional gunn device confirm the importance of the doping condition at the cathode. Accumulation or dipole domains are achieved respectively with high and low doping densities. The limits of a conventional Gunn diode are explained and solved by introducing the heterostructure Gunn diode. This new design consists of a conventional GaAs transit region coupled with an electron launcher at the cathode, made using an AIGaAs heterostructure step. Simulations show the importance of the insertion of a thin highly-doped layer between the transit region and the electron launcher in order to improve device operation. Chapter 5 is an introduction to Ill-nitrides, in particular GaN and its alloy ln-GaN. We outline the discrepancy in the elastic and piezoelectric parameters found in the literature. Strain, dislocations and piezoelectricity are presented as the main features of a InGaN/GaN system

  3. A theory of coherent propagation of light wave in semiconductors

    International Nuclear Information System (INIS)

    Zi-zhao, G.; Guo-zhen, Y.

    1980-05-01

    In this paper, we suggest a theory to describe the pheonmena of coherent propagation of light wave in semiconductors. Basing on two band system and considering the interband and intraband transitions induced by light wave and the interaction between electrons, we obtain the nonlinear equations for the description of interaction between carriers and coherent light wave. We have made use of the equations to analyse the phenomena which arise from the interaction between semiconductors and coherent light, for example, the multiphoton transitions, the saturation of light absorption of exciton, the shift of exciton line in intense light field, and the coherent propagation phenomena such as self-induced transparency, etc. (author)

  4. Finite element method for simulation of the semiconductor devices

    International Nuclear Information System (INIS)

    Zikatanov, L.T.; Kaschiev, M.S.

    1991-01-01

    An iterative method for solving the system of nonlinear equations of the drift-diffusion representation for the simulation of the semiconductor devices is worked out. The Petrov-Galerkin method is taken for the discretization of these equations using the bilinear finite elements. It is shown that the numerical scheme is a monotonous one and there are no oscillations of the solutions in the region of p-n transition. The numerical calculations of the simulation of one semiconductor device are presented. 13 refs.; 3 figs

  5. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  6. Calculation of the internal electric field within doped semiconductors

    International Nuclear Information System (INIS)

    Phelps, G J

    2012-01-01

    A detailed model for the calculation of the internal potential and electric field profile within doped semiconductors is developed from a first-principles approach and presented in this paper. The model utilizes Poisson's equation and basic Boltzmann statistics to develop a standard nonlinear Poisson–Boltzmann equation (NPBE) for doped semiconductors. The resultant NPBE links the internal electrostatic potential within the doped semiconductor to the doping concentration profile of the semiconductor device under consideration. The NPBE is solved by the application of numerical methods, is general in formulation, supporting multiple simultaneous dopant configurations, and may be applied to any semiconductor type. Calculated results of the electric field profile for various semiconductor dopant structures derived using the model are additionally presented in this paper. The electric field results predicted by the model are shown to be in excellent agreement with those found by other methods. The model may be expanded to accommodate effects involving internal substrate electron–hole pair generation (gemination) caused by photo-ionization for application to and the modeling of solar cell device structures. (paper)

  7. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  8. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  9. Derivation and Numerical Approximation of the Quantum Drift Diffusion Model for Semiconductors

    International Nuclear Information System (INIS)

    Ohnmar Nwe

    2004-06-01

    This paper is concerned with the study of the quantum drift diffusion equation for semiconductors. Derivation of the mathematical model, which describes the electeon flow through a semiconductor device due to the application of a voltage, is considered and studied in numerical point of view by using some methods

  10. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  11. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  12. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  13. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  14. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  15. An Optomechanical Elevator: Transport of a Bloch Oscillating Bose–Einstein Condensate up and down an Optical Lattice by Cavity Sideband Amplification and Cooling

    Directory of Open Access Journals (Sweden)

    B. Prasanna Venkatesh

    2015-12-01

    Full Text Available In this paper we give a new description, in terms of optomechanics, of previous work on the problem of an atomic Bose–Einstein condensate interacting with the optical lattice inside a laser-pumped optical cavity and subject to a bias force, such as gravity. An atomic wave packet in a tilted lattice undergoes Bloch oscillations; in a high-finesse optical cavity the backaction of the atoms on the light leads to a time-dependent modulation of the intracavity lattice depth at the Bloch frequency which can in turn transport the atoms up or down the lattice. In the optomechanical picture, the transport dynamics can be interpreted as a manifestation of dynamical backaction-induced sideband damping/amplification of the Bloch oscillator. Depending on the sign of the pump-cavity detuning, atoms are transported either with or against the bias force accompanied by an up- or down-conversion of the frequency of the pump laser light. We also evaluate the prospects for using the optomechanical Bloch oscillator to make continuous measurements of forces by reading out the Bloch frequency. In this context, we establish the significant result that the optical spring effect is absent and the Bloch frequency is not modified by the backaction.

  16. Tunable radiation emitting semiconductor device

    NARCIS (Netherlands)

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  17. Matter-wave solitons and finite-amplitude Bloch waves in optical lattices with spatially modulated nonlinearity

    Science.gov (United States)

    Zhang, Jie-Fang; Li, Yi-Shen; Meng, Jianping; Wu, Lei; Malomed, Boris A.

    2010-09-01

    We investigate solitons and nonlinear Bloch waves in Bose-Einstein condensates trapped in optical lattices (OLs). By introducing specially designed localized profiles of the spatial modulation of the attractive nonlinearity, we construct an infinite set of exact soliton solutions in terms of Mathieu and elliptic functions, with the chemical potential belonging to the semi-infinite gap of the OL-induced spectrum. Starting from the particular exact solutions, we employ the relaxation method to construct generic families of soliton solutions in a numerical form. The stability of the solitons is investigated through the computation of the eigenvalues for small perturbations, and also by direct simulations. Finally, we demonstrate a virtually exact (in the numerical sense) composition relation between nonlinear Bloch waves and solitons.

  18. Matter-wave solitons and finite-amplitude Bloch waves in optical lattices with spatially modulated nonlinearity

    International Nuclear Information System (INIS)

    Zhang Jiefang; Meng Jianping; Wu Lei; Li Yishen; Malomed, Boris A.

    2010-01-01

    We investigate solitons and nonlinear Bloch waves in Bose-Einstein condensates trapped in optical lattices (OLs). By introducing specially designed localized profiles of the spatial modulation of the attractive nonlinearity, we construct an infinite set of exact soliton solutions in terms of Mathieu and elliptic functions, with the chemical potential belonging to the semi-infinite gap of the OL-induced spectrum. Starting from the particular exact solutions, we employ the relaxation method to construct generic families of soliton solutions in a numerical form. The stability of the solitons is investigated through the computation of the eigenvalues for small perturbations, and also by direct simulations. Finally, we demonstrate a virtually exact (in the numerical sense) composition relation between nonlinear Bloch waves and solitons.

  19. Theory of quantum diffusion in biased semiconductors

    CERN Document Server

    Bryksin, V V

    2003-01-01

    A general theory is developed to describe diffusion phenomena in biased semiconductors and semiconductor superlattices. It is shown that the Einstein relation is not applicable for all field strengths so that the calculation of the field-mediated diffusion coefficient represents a separate task. Two quite different diffusion contributions are identified. The first one disappears when the dipole operator commutes with the Hamiltonian. It plays an essential role in the theory of small polarons. The second contribution is obtained from a quantity that is the solution of a kinetic equation but that cannot be identified with the carrier distribution function. This is in contrast to the drift velocity, which is closely related to the distribution function. A general expression is derived for the quantum diffusion regime, which allows a clear physical interpretation within the hopping picture.

  20. Modeling space-charge-limited currents in organic semiconductors: Extracting trap density and mobility

    KAUST Repository

    Dacuñ a, Javier; Salleo, Alberto

    2011-01-01

    We have developed and have applied a mobility edge model that takes drift and diffusion currents to characterize the space-charge-limited current in organic semiconductors into account. The numerical solution of the drift-diffusion equation allows

  1. Semirelativity in semiconductors: a review.

    Science.gov (United States)

    Zawadzki, Wlodek

    2017-09-20

    An analogy between behavior of electrons in narrow-gap semiconductors (NGS) and relativistic electrons in vacuum is reviewed. Energy band structures [Formula: see text] are considered for various NGS materials and their correspondence to the energy-momentum relation in special relativity is emphasized. It is indicated that special relativity for vacuum is analogous to a two-band [Formula: see text] description for NGS. The maximum electron velocity in NGS is [Formula: see text], which corresponds to the light velocity in vacuum. An effective mass of charge carriers in semiconductors is introduced, relating their velocity to quasimomentum and it is shown that this mass depends on electron energy (or velocity) in a way similar to the mass of free relativistic electrons. In [Formula: see text] alloys one can reach vanishing energy gap at which electrons and light holes become three-dimensional massless Dirac fermions. A wavelength [Formula: see text] is defined for NGS, in analogy to the Compton wavelength in relativistic quantum mechanics. It is estimated that [Formula: see text] is on the order of tens of Angstroms in typical semiconducting materials which is experimentally confirmed in tunneling experiments on energy dispersion in the forbidden gap. Statistical properties of the electron gas in NGS are calculated and their similarity is demonstrated to those of the Juttner gas of relativistic particles. Interband electron tunneling in NGS is described and shown to be in close analogy to the predicted but unobserved tunneling between negative and positive energies resulting from the Dirac equation for free electrons. It is demonstrated that the relativistic analogy holds for orbital and spin properties of electrons in the presence of an external magnetic field. In particular, it is shown that the spin magnetic moment of both NGS electrons and relativistic electrons approaches zero with increasing energy. This conclusion is confirmed experimentally for NGS. Electrons

  2. Semirelativity in semiconductors: a review

    Science.gov (United States)

    Zawadzki, Wlodek

    2017-09-01

    An analogy between behavior of electrons in narrow-gap semiconductors (NGS) and relativistic electrons in vacuum is reviewed. Energy band structures \\varepsilon ≤ft(\\mathbf{k}\\right) are considered for various NGS materials and their correspondence to the energy-momentum relation in special relativity is emphasized. It is indicated that special relativity for vacuum is analogous to a two-band \\mathbf{k}\\centerdot \\mathbf{p} description for NGS. The maximum electron velocity in NGS is u≃ 1× {{10}8}~\\text{cm}~{{\\text{s}}-1} , which corresponds to the light velocity in vacuum. An effective mass of charge carriers in semiconductors is introduced, relating their velocity to quasimomentum and it is shown that this mass depends on electron energy (or velocity) in a way similar to the mass of free relativistic electrons. In \\text{H}{{\\text{g}}1-x}\\text{C}{{\\text{d}}x}\\text{Te} alloys one can reach vanishing energy gap at which electrons and light holes become three-dimensional massless Dirac fermions. A wavelength {λz} is defined for NGS, in analogy to the Compton wavelength in relativistic quantum mechanics. It is estimated that {λz} is on the order of tens of Angstroms in typical semiconducting materials which is experimentally confirmed in tunneling experiments on energy dispersion in the forbidden gap. Statistical properties of the electron gas in NGS are calculated and their similarity is demonstrated to those of the Juttner gas of relativistic particles. Interband electron tunneling in NGS is described and shown to be in close analogy to the predicted but unobserved tunneling between negative and positive energies resulting from the Dirac equation for free electrons. It is demonstrated that the relativistic analogy holds for orbital and spin properties of electrons in the presence of an external magnetic field. In particular, it is shown that the spin magnetic moment of both NGS electrons and relativistic electrons approaches zero with increasing

  3. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  4. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  5. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  6. Matter-wave solitons and finite-amplitude Bloch waves in optical lattices with a spatially modulated nonlinearity

    OpenAIRE

    Zhang, Jie-Fang; Li, Yi-Shen; Meng, Jianping; Wu, Lei; Malomed, Boris A.

    2010-01-01

    We investigate solitons and nonlinear Bloch waves in Bose-Einstein condensates trapped in optical lattices. By introducing specially designed localized profiles of the spatial modulation of the attractive nonlinearity, we construct an infinite number of exact soliton solutions in terms of the Mathieu and elliptic functions, with the chemical potential belonging to the semi-infinite bandgap of the optical-lattice-induced spectrum. Starting from the exact solutions, we employ the relaxation met...

  7. Perturbation theory for the bloch electrons on strongly coupled chains in both uniform electric and magnetic fields

    International Nuclear Information System (INIS)

    Zhao, X.G.; Chen, S.G.

    1992-01-01

    In this paper, the energy spectrum and the wave functions for a tight-binding Bloch electron on coupled chains under the action of both uniform electric and magnetic fields are studied in detail. Exact results are obtained for the case when the coupling between chains is large by using the perturbation theory, from which it is found that the spectrum is that of two interspaced Stark ladders. The magnetic field dependence of the energy spectrum is also discussed

  8. Depletion field focusing in semiconductors

    NARCIS (Netherlands)

    Prins, M.W.J.; Gelder, Van A.P.

    1996-01-01

    We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

  9. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  10. Activity coefficients of electrons and holes in semiconductors

    International Nuclear Information System (INIS)

    Orazem, M.E.; Newman, J.

    1984-01-01

    Dilute-solution transport equations with constant activity coefficients are commonly used to model semiconductors. These equations are consistent with a Boltzmann distribution and are invalid in regions where the species concentration is close to the respective site concentration. A more rigorous treatment of transport in a semiconductor requires activity coefficients which are functions of concentration. Expressions are presented for activity coefficients of electrons and holes in semiconductors for which conduction- and valence-band energy levels are given by the respective bandedge energy levels. These activity coefficients are functions of concentration and are thermodynamically consistent. The use of activity coefficients in macroscopic transport relationships allows a description of electron transport in a manner consistent with the Fermi-Dirac distribution

  11. Semi-conductor rectifiers

    International Nuclear Information System (INIS)

    1981-01-01

    A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

  12. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  13. Mathematical modeling of thermal runaway in semiconductor laser operation

    NARCIS (Netherlands)

    Smith, W.R.

    2000-01-01

    A mathematical model describing the coupling of electrical, optical and thermal effects in semiconductor lasers is introduced. Through a systematic asymptotic expansion, the governing system of differential equations is reduced to a single second-order boundary value problem. This highly nonlinear

  14. Analysis of small-signal intensity modulation of semiconductor ...

    Indian Academy of Sciences (India)

    This paper demonstrates theoretical characterization of intensity modulation of semiconductor lasers (SL's). The study is based on a small-signal model to solve the laser rate equations taking into account suppression of optical gain. Analytical forms of the small-signal modulation response and modulation bandwidth are ...

  15. Propagation and collision of soliton rings in quantum semiconductor plasmas

    International Nuclear Information System (INIS)

    El-Shamy, E.F.; Gohman, F.S.

    2014-01-01

    The intrinsic localization of electrostatic wave energies in quantum semiconductor plasmas can be described by solitary pulses. The collision properties of these pulses are investigated. In the present study, the fundamental model includes the quantum term, degenerate pressure of the plasma species, and the electron/hole exchange–correlation effects. In cylindrical geometry, using the extended Poincaré–Lighthill–Kuo (PLK) method, the Korteweg–de Vries (KdV) equations and the analytical phase shifts after the collision of two soliton rings are derived. Typical values for GaSb and GaN semiconductors are used to estimate the basic features of soliton rings. It is found that the pulses of GaSb semiconductor carry more energies than the pulses of GaN semiconductor. In addition, the degenerate pressure terms of electrons and holes have strong impact on the phase shift. The present theory may be useful to analyze the collision of localized coherent electrostatic waves in quantum semiconductor plasmas. - Highlights: • The propagation and the collision of pulses in quantum semiconductor plasmas are studied. • Numerical calculations reveal that pulses may exist only in dark soliton rings for electron–hole quantum plasmas. • Typical values for GaSb and GaN semiconductors are used to estimate the basic features of soliton rings. • It is found that the pulses of GaSb semiconductor carry more energies than the pulses of GaN semiconductor. • The degenerate pressure terms of electrons and holes have strong impact on the phase shift

  16. Differential geometric invariants for time-reversal symmetric Bloch-bundles: The “Real” case

    International Nuclear Information System (INIS)

    De Nittis, Giuseppe; Gomi, Kiyonori

    2016-01-01

    Topological quantum systems subjected to an even (resp. odd) time-reversal symmetry can be classified by looking at the related “Real” (resp. “Quaternionic”) Bloch-bundles. If from one side the topological classification of these time-reversal vector bundle theories has been completely described in De Nittis and Gomi [J. Geom. Phys. 86, 303–338 (2014)] for the “Real” case and in De Nittis and Gomi [Commun. Math. Phys. 339, 1–55 (2015)] for the “Quaternionic” case, from the other side it seems that a classification in terms of differential geometric invariants is still missing in the literature. With this article and its companion [G. De Nittis and K. Gomi (unpublished)] we want to cover this gap. More precisely, we extend in an equivariant way the theory of connections on principal bundles and vector bundles endowed with a time-reversal symmetry. In the “Real” case we generalize the Chern-Weil theory and we show that the assignment of a “Real” connection, along with the related differential Chern class and its holonomy, suffices for the classification of “Real” vector bundles in low dimensions.

  17. Corrections to Newton’s law of gravitation - application to hybrid Bloch brane

    Science.gov (United States)

    Almeida, C. A. S.; Veras, D. F. S.; Dantas, D. M.

    2018-02-01

    We present in this work, the calculations of corrections in the Newton’s law of gravitation due to Kaluza-Klein gravitons in five-dimensional warped thick braneworld scenarios. We consider here a recently proposed model, namely, the hybrid Bloch brane. This model couples two scalar fields to gravity and is engendered from a domain wall-like defect. Also, two other models the so-called asymmetric hybrid brane and compact brane are considered. Such models are deformations of the ϕ 4 and sine-Gordon topological defects, respectively. Therefore we consider the branes engendered by such defects and we also compute the corrections in their cases. In order to attain the mass spectrum and its corresponding eigenfunctions which are the essential quantities for computing the correction to the Newtonian potential, we develop a suitable numerical technique. The calculation of slight deviations in the gravitational potential may be used as a selection tool for braneworld scenarios matching with future experimental measurements in high energy collisions

  18. Cytotoxic and genotoxic affects of acid mine drainage on fish Channa punctata (Bloch).

    Science.gov (United States)

    Talukdar, B; Kalita, H K; Basumatary, S; Saikia, D J; Sarma, D

    2017-10-01

    The investigation deals with the effects of Acid Mine Drainage (AMD) of coal mine on fish Channa punctata (Bloch) by examining the incidence of haematological, morphological, histological changes and DNA fragmentation in tissues of C. punctata in laboratory condition. For this study fishes were exposed to 10% of AMD for a period of 30 days. The fusion of the primary and secondary gill lamellae, distortion, loss of alignment, deposition of worn out tissues and mucous on the surface of the lamella in the gills; degeneration of morphological architecture, loss of alignment of tubules, mucous deposition in the kidney; cellular damage, cellular necrosis, extraneous deposition on the surface, pore formation in the liver are some important changes detected by scanning electron microscopy. Fishes of AMD treated group showed gradual significant decrease in TEC, Hb and, increase in TLC and DLC as compared to that of the control. DNA fragmentation observed in kidney of fishes from treated group indicates an intricate pollutant present in the AMD. The high incidence of morphological and histological alterations, haematological changes along with DNA breakage in C. punctata is an evidence of the cytotoxic and genotoxic potential of AMD of coal mines. Copyright © 2017 Elsevier Inc. All rights reserved.

  19. Microbiological and biochemical changes in pearl spot (Etroplus suratensis Bloch) stored under modified atmospheres.

    Science.gov (United States)

    Lalitha, K V; Sonaji, E R; Manju, S; Jose, L; Gopal, T K S; Ravisankar, C N

    2005-01-01

    This study aimed to determine the effect of packaging [air, modified atmosphere (MA)] on microbial growth, sensory and chemical parameters and also on shelf life of fresh pearl spot (Etroplus suratensis Bloch) and on the selection of microbial association. Fresh pearl spot (whole, gutted) were packaged under both 100% air and MAs (40%CO(2)/60% O(2), 50%CO(2)/50%O(2), 60% CO(2)/40%O(2), 70% CO(2)/30% O(2) and 40% CO(2)/30% O(2)/30% N(2)) and stored at 0 degrees C. Microbial growth (counts of total aerobic bacteria, H(2)S-producing bacteria, Lactic acid bacteria, Brochothrix thermosphacta, yeast and mould), chemical spoilage indicators (pH, total volatile basic nitrogen) and sensory characteristics were monitored. Microbial changes in Pearl spot packed under 100% air and 40% CO(2)/30%O(2)/30% N(2) were similar. The total volatile basic nitrogen values increased, but the values never exceeded the acceptability limit of 25 mg 100 g(-1). MA 60% CO(2) : 40%O(2) was found to be better with a shelf life of 21 days whereas air stored samples had a shelf-life of 12-14 days only. Storage of pearl spot under MAs 60% CO(2) : 40%O(2) is a promising method to extend shelf-life. Longer shelf life expands the market potential of pearl spot and reduces waste during distribution and retail display.

  20. Emergence of quasiparticle Bloch states in artificial crystals crafted atom-by-atom

    Directory of Open Access Journals (Sweden)

    Jan Girovsky, Jose L. Lado, Floris E. Kalff, Eleonora Fahrenfort, Lucas J. J. M. Peters, Joaquín Fernández-Rossier, Alexander F. Otte

    2017-06-01

    Full Text Available The interaction of electrons with a periodic potential of atoms in crystalline solids gives rise to band structure. The band structure of existing materials can be measured by photoemission spectroscopy and accurately understood in terms of the tight-binding model, however not many experimental approaches exist that allow to tailor artificial crystal lattices using a bottom-up approach. The ability to engineer and study atomically crafted designer materials by scanning tunnelling microscopy and spectroscopy (STM/STS helps to understand the emergence of material properties. Here, we use atom manipulation of individual vacancies in a chlorine monolayer on Cu(100 to construct one- and two-dimensional structures of various densities and sizes. Local STS measurements reveal the emergence of quasiparticle bands, evidenced by standing Bloch waves, with tuneable dispersion. The experimental data are understood in terms of a tight-binding model combined with an additional broadening term that allows an estimation of the coupling to the underlying substrate.

  1. Energies and bounds from perturbative approximations to the Bloch-Horowitz effective Hamiltonian

    International Nuclear Information System (INIS)

    Darema-Rogers, F.; Vincent, C.M.

    1978-01-01

    Bloch-Horowitz perturbation theory is applied to the calculation of approximate energies and model-space eigenvectors, for the solvable large-matrix Hamiltonian H used by Pittel, Vincent, and Vergados. Two types of upper and lower bounds to the energies are discussed: moment-theory bounds, obtained by applying moment theory to the terms of perturbation theory, and norm bounds, derived from the expectation E-bar and variance sigma 2 of H with respect to an eigenvector approximated by nth order perturbation theory (n < or = 6). It is shown that lower bounds cannot be constructed unless some fourth-order quantity is known. The upper bounds are generally stricter than the lower bounds. All of the bounds apply even when back-door intruder states cause perturbation theory to diverge; but they lose their rigor and become ''quasibounds'' when there are physical intruders. The moment-theory and norm lower quasibounds always require estimation of a parameter. For the solvable Hamiltonians, it is shown that this can be done quite reliably, and that the resulting quasibounds are tight enough to have some practical utility. The energy-independent effective interaction V is constructed and its errors are displayed and discussed. Finally, a certain [1/2] pseudo-Pade approximant is empirically shown to give energies with a mean absolute error of less than 0.3 MeV in all cases

  2. Establishment of a cell line from kidney of seabass, Lates calcarifer (Bloch

    Directory of Open Access Journals (Sweden)

    Phromkunthong, W.

    2003-01-01

    Full Text Available Primary cell culture from caudal fin and kidney of seabass (Lates calcarifer Bloch using tissue explant method were cultured in three different medias with various salt concentrations. Only seabass kidney (SK cells grew well in Leibovitze's-15 medium containing 8 g/l of NaCl supplemented with 10 % fetal bovine serum at an optimum temperature of 25 oC. Over a period of 24 months, SK cells were subcultured over than 75 passages and exhibited epithelial-like cells. The chromosome number of SK cells was 42. The cells were found to be free from bacterial, fungal and mycoplasma contamination. Seabass cells can be kept at -80 oC and/or in liquid nitrogen (-196 oC for at least 24 months with a survival rate of 83.20 and 74.50 %, respectively. Nine fish viruses were tested for their infectivity and this SK cells were susceptible to sand goby virus (SGV, chub reovirus (CRV, snake-head rhabdovirus (SHRV, red seabream iridovirus (RSIV, seabass iridovirus (SIV and grouper iridovirus-2 (GIV-2.

  3. Development of immune functionality in larval and juvenile crimson snapper Lutjanus erythropterus (Bloch 1790

    Directory of Open Access Journals (Sweden)

    Ke Cui

    2018-05-01

    Full Text Available Ontogenetic development of the immune system in crimson snapper (Lutjanus erythropterus Bloch 1790 larvae was histologically and enzymatically studied from hatch to 36 days post-hatch (DPH. Primitive hepatopancreas appeared on 2 DPH and renal tubules started hematopoiesis on 4 DPH. The spleen anlage appeared on 6 DPH and the thymus formed on 14 DPH. Total activities of superoxide dismutase (SOD, catalase (CAT, glutathione peroxidase (GPX and sodium-potassium adenosine triphosphatase (Na+ K+-ATPase gradually increased after hatch, and showed a sharp increase after 29 DPH during the transitional feeding period from Artemia to inert feed. The specific activities of SOD, CAT, and GPX showed a trend of sharp increase and reached the maximum level on 4 DPH when exogenous feeding started, except for Na+ K+-ATPase where the peak occurred on10 DPH. The specific activities of these five enzymes reached the peak during the food transition from rotifers to Artemia, but the total activity of enzymes showed an increasing trend as fish grew. The present study provides new knowledge of the development of functional enzymes relevant to fish larvae immunity, sheds light on the understanding of the change of larval health, and improves hatchery management of crimson snapper. Keywords: Immune system, Enzyme activity, Ontogenetic development, Crimson snapper Lutjanus erythropterus

  4. A size selective porous silicon grating-coupled Bloch surface and sub-surface wave biosensor.

    Science.gov (United States)

    Rodriguez, Gilberto A; Ryckman, Judson D; Jiao, Yang; Weiss, Sharon M

    2014-03-15

    A porous silicon (PSi) grating-coupled Bloch surface and sub-surface wave (BSW/BSSW) biosensor is demonstrated to size selectively detect the presence of both large and small molecules. The BSW is used to sense large immobilized analytes at the surface of the structure while the BSSW that is confined inside but near the top of the structure is used to sensitively detect small molecules. Functionality of the BSW and BSSW modes is theoretically described by dispersion relations, field confinements, and simulated refractive index shifts within the structure. The theoretical results are experimentally verified by detecting two different small chemical molecules and one large 40 base DNA oligonucleotide. The PSi-BSW/BSSW structure is benchmarked against current porous silicon technology and is shown to have a 6-fold higher sensitivity in detecting large molecules and a 33% improvement in detecting small molecules. This is the first report of a grating-coupled BSW biosensor and the first report of a BSSW propagating mode. © 2013 Published by Elsevier B.V.

  5. The peripheral olfactory organ in the Greenland shark Somniosus microcephalus (Bloch and Schneider, 1801

    Directory of Open Access Journals (Sweden)

    Laura Ghigliotti

    2015-11-01

    Full Text Available The Greenland shark Somniosus microcephalus (Bloch and Schneider, 1801 is the largest predatory fish in Arctic waters. The socio-economic significance of Greenland shark is demonstrated by its impact on the fishing cultures in Greenland, Scandinavia and Iceland for centuries. The fundamental biology and ecological role of Greenland shark, on the other hand, is virtually unknown. Although knowledge of its life history is limited, increasing evidence indicates that the Greenland shark may undertake long-distance migrations and perform vertical movements from the surface to the deep sea. It is an omnivorous species feeding on carrion and a wide variety of pelagic and bottom-dwelling organisms ranging from invertebrates to mammals, and including active species such as fishes and seals. Accordingly, Greenland shark should be recognized as a top predator, with a strong potential to influence the trophic dynamics of the Arctic marine ecosystem. The sensory biology of Greenland shark is scarcely studied, and considering the importance of olfaction in chemoreception, feeding and other behavioral traits, we examined the architecture of the peripheral olfactory organ where olfactory cues are received from the environment – the olfactory rosette. The structural organization of the olfactory rosette, in terms of histological features of the sensory epithelium, number of primary lamellae and total sensory surface area, provides a first proxy of the olfactory capability of Greenland shark. Based on own results and published studies, the overall morphology of the olfactory rosette is viewed in context of the functional and trophic ecology among other elasmobranch species.

  6. Two-wave mixing in a broad-area semiconductor amplifier

    DEFF Research Database (Denmark)

    Chi, M.; Jensen, S.B.; Huignard, J.P.

    2006-01-01

    The two-wave mixing in the broad-area semiconductor amplifier was investigated, both theoretically and experimentally. In detail we investigated how the optical gain is affected by the presence of the two-wave mixing interference grating. In the experimental setup we are able to turn on and off...... the interference pattern in the semiconductor amplifier. This arrangement allows us to determine the two-wave mixing gain. The coupled-wave equations of two-wave mixing were derived based on the Maxwell’s wave equation and rate equation of the carrier density. The analytical solutions of the coupled-wave equations...

  7. Integral equations

    CERN Document Server

    Moiseiwitsch, B L

    2005-01-01

    Two distinct but related approaches hold the solutions to many mathematical problems--the forms of expression known as differential and integral equations. The method employed by the integral equation approach specifically includes the boundary conditions, which confers a valuable advantage. In addition, the integral equation approach leads naturally to the solution of the problem--under suitable conditions--in the form of an infinite series.Geared toward upper-level undergraduate students, this text focuses chiefly upon linear integral equations. It begins with a straightforward account, acco

  8. Stochastic wave-function unravelling of the generalized Lindblad equation using correlated states

    International Nuclear Information System (INIS)

    Moodley, Mervlyn; Nsio Nzundu, T; Paul, S

    2012-01-01

    We perform a stochastic wave-function unravelling of the generalized Lindblad master equation using correlated states, a combination of the system state vectors and the environment population. The time-convolutionless projection operator method using correlated projection superoperators is applied to a two-state system, a qubit, that is coupled to an environment consisting of two energy bands which are both populated. These results are compared to the data obtained from Monte Carlo wave-function simulations based on the unravelling of the master equation. We also show a typical quantum trajectory and the average time evolution of the state vector on the Bloch sphere. (paper)

  9. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  10. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  11. Three dimensional strained semiconductors

    Science.gov (United States)

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  12. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  13. Optically coupled semiconductor device

    Energy Technology Data Exchange (ETDEWEB)

    Kumagaya, Naoki

    1988-11-18

    This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

  14. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  16. Muonium states in semiconductors

    International Nuclear Information System (INIS)

    Patterson, B.D.

    1987-01-01

    There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

  17. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  18. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  20. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  1. Semiconductor Ion Implanters

    International Nuclear Information System (INIS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-01-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  2. The Physics of Semiconductors

    Science.gov (United States)

    Brennan, Kevin F.

    1999-02-01

    Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

  3. An Update on the Invasion of Weakfish Cynoscion regalis (Bloch & Schneider, 1801 (Actinopterygii: Sciaenidae into Europe

    Directory of Open Access Journals (Sweden)

    Pedro Morais

    2017-10-01

    Full Text Available New information on weakfish introduction vectors, its invasive status, distribution, and use as a fishing resource arose after the publication of “The transatlantic introduction of weakfish Cynoscion regalis (Bloch & Schneider, 1801 (Sciaenidae, Pisces into Europe” by Morais and Teodósio (2016. Currently, the first known report of weakfish in Europe dates back to September 2009, with a specimen captured in the Schelde estuary (Belgium/The Netherlands. This fact suggests that weakfish could have been introduced into Europe via multiple and independent ballast water introduction events, and not through a point-source introduction event with subsequent dispersion as previously hypothesized. It is also unlikely that Schelde weakfish migrated southwards to colonize Iberian aquatic ecosystems. Weakfish have established a population in the Gulf of Cádiz region and have already reached an invasive status in the Sado estuary (Portugal. Weakfish were also captured in several other locations along the Portuguese coast, including the Tagus and Mira estuaries at least since 2013 or 2014, and the Ria Formosa lagoon in 2017. Tagus anglers caught weakfish specimens of ~1 kg and ~40 cm in November 2016, which corresponds to fish of 3+ years of age in the native range. The presence of weakfish in the Tagus estuary is still fairly unknown to local anglers. Sado weakfish has already been sold in local fish markets in southern Portugal for 3 to 10 € kg−1. However, we consider that the weakfish sale price is underrated in comparison with other wild species (e.g., meagre, seabass, gilthead seabream. Increasing sale price will convince fishers to use weakfish as a new fishing resource; however, it is necessary to promote the species among consumers and evaluate consumers’ preference in respect to other species. A putative biological threat might turn into a new valuable fishing resource by implementing adequate management solutions.

  4. The astigmatism factor for semiconductor injection lasers

    International Nuclear Information System (INIS)

    Zhao Yiguang; Guo Changzhi

    1988-03-01

    The relations between the astigmatism factor and the waveguide structure, working conditions etc. were accurately calculated, using a method for deriving a self-consistent solution of the optical field equation and the carrier diffusion equation. Various theoretical models regarding the spontaneous emission factor were analyzed and compared. The results show that there is a difference between astigmatism factors of semiconductor lasers with different waveguide structures. W. Streifer's results, for a model having an invariable distribution of the complex refractive index, are larger by a factor of 6 to 80 than the accurate calculated value. K. Petermann's theory regarding the spontaneous emission factor is more appropriate than other theories. (author). 19 refs, 6 figs

  5. Differential equations

    CERN Document Server

    Tricomi, FG

    2013-01-01

    Based on his extensive experience as an educator, F. G. Tricomi wrote this practical and concise teaching text to offer a clear idea of the problems and methods of the theory of differential equations. The treatment is geared toward advanced undergraduates and graduate students and addresses only questions that can be resolved with rigor and simplicity.Starting with a consideration of the existence and uniqueness theorem, the text advances to the behavior of the characteristics of a first-order equation, boundary problems for second-order linear equations, asymptotic methods, and diff

  6. Effects of Coupling Lens on Optical Refrigeration of Semiconductors

    International Nuclear Information System (INIS)

    Kai, Ding; Yi-Ping, Zeng

    2008-01-01

    Optical refrigeration of semiconductors is encountering efficiency difficulties caused by nonradiative recombination and luminescence trapping. A commonly used approach for enhancing luminescence efficiency of a semiconductor device is coupling a lens with the device. We quantitatively study the effects of a coupling lens on optical refrigeration based on rate equations and photon recycling, and calculated cooling efficiencies of different coupling mechanisms and of different lens materials. A GaAs/GaInP heterostructure coupled with a homo-epitaxial GaInP hemispherical lens is recommended. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  7. Differential equations

    CERN Document Server

    Barbu, Viorel

    2016-01-01

    This textbook is a comprehensive treatment of ordinary differential equations, concisely presenting basic and essential results in a rigorous manner. Including various examples from physics, mechanics, natural sciences, engineering and automatic theory, Differential Equations is a bridge between the abstract theory of differential equations and applied systems theory. Particular attention is given to the existence and uniqueness of the Cauchy problem, linear differential systems, stability theory and applications to first-order partial differential equations. Upper undergraduate students and researchers in applied mathematics and systems theory with a background in advanced calculus will find this book particularly useful. Supplementary topics are covered in an appendix enabling the book to be completely self-contained.

  8. Electrodes for Semiconductor Gas Sensors

    Science.gov (United States)

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  9. Asymmetric rogue waves, breather-to-soliton conversion, and nonlinear wave interactions in the Hirota–Maxwell–Bloch system

    International Nuclear Information System (INIS)

    Wang Lei; Zhu Yujie; Wang Ziqi; Xu Tao; Qi Fenghua; Xue Yushan

    2016-01-01

    We study the nonlinear localized waves on constant backgrounds of the Hirota–Maxwell–Bloch (HMB) system arising from the erbium doped fibers. We derive the asymmetric breather, rogue wave (RW) and semirational solutions of the HMB system. We show that the breather and RW solutions can be converted into various soliton solutions. Under different conditions of parameters, we calculate the locus of the eigenvalues on the complex plane which converts the breathers or RWs into solitons. Based on the second-order solutions, we investigate the interactions among different types of nonlinear waves including the breathers, RWs and solitons. (author)

  10. Asymmetric Rogue Waves, Breather-to-Soliton Conversion, and Nonlinear Wave Interactions in the Hirota-Maxwell-Bloch System

    Science.gov (United States)

    Wang, Lei; Zhu, Yu-Jie; Wang, Zi-Qi; Xu, Tao; Qi, Feng-Hua; Xue, Yu-Shan

    2016-02-01

    We study the nonlinear localized waves on constant backgrounds of the Hirota-Maxwell-Bloch (HMB) system arising from the erbium doped fibers. We derive the asymmetric breather, rogue wave (RW) and semirational solutions of the HMB system. We show that the breather and RW solutions can be converted into various soliton solutions. Under different conditions of parameters, we calculate the locus of the eigenvalues on the complex plane which converts the breathers or RWs into solitons. Based on the second-order solutions, we investigate the interactions among different types of nonlinear waves including the breathers, RWs and solitons.

  11. Hot electrons in superlattices: quantum transport versus Boltzmann equation

    DEFF Research Database (Denmark)

    Wacker, Andreas; Jauho, Antti-Pekka; Rott, S.

    1999-01-01

    A self-consistent solution of the transport equation is presented for semiconductor superlattices within different approaches: (i) a full quantum transport model based on nonequilibrium Green functions, (ii) the semiclassical Boltzmann equation for electrons in a miniband, and (iii) Boltzmann...

  12. Theory of nanolaser devices: Rate equation analysis versus microscopic theory

    DEFF Research Database (Denmark)

    Lorke, Michael; Skovgård, Troels Suhr; Gregersen, Niels

    2013-01-01

    A rate equation theory for quantum-dot-based nanolaser devices is developed. We show that these rate equations are capable of reproducing results of a microscopic semiconductor theory, making them an appropriate starting point for complex device simulations of nanolasers. The input...

  13. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  14. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  15. Semiconductor ionizino. radiation detectors

    International Nuclear Information System (INIS)

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  16. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  17. Fast-forward scaling theory for phase imprinting on a BEC: creation of a wave packet with uniform momentum density and loading to Bloch states without disturbance

    Science.gov (United States)

    Masuda, Shumpei; Nakamura, Katsuhiro; Nakahara, Mikio

    2018-02-01

    We study phase imprinting on Bose-Einstein condensates (BECs) with the fast-forward scaling theory revealing a nontrivial scaling property in quantum dynamics. We introduce a wave packet with uniform momentum density (WPUM) which has peculiar properties but is short-lived. The fast-forward scaling theory is applied to derive the driving potential for creation of the WPUMs in a predetermined time. Fast manipulation is essential for the creation of WPUMs because of the instability of the state. We also study loading of a BEC into a predetermined Bloch state in the lowest band from the ground state of a periodic potential. Controlled linear potential is not sufficient for creation of the Bloch state with large wavenumber because the change in the amplitude of the order parameter is not negligible. We derive the exact driving potential for creation of predetermined Bloch states using the obtained theory.

  18. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  19. Discontinuous Galerkin Approximations for Computing Electromagnetic Bloch Modes in Photonic Crystals

    NARCIS (Netherlands)

    Lu, Zhongjie; Cesmelioglu, A.; van der Vegt, Jacobus J.W.; Xu, Yan

    We analyze discontinuous Galerkin finite element discretizations of the Maxwell equations with periodic coefficients. These equations are used to model the behavior of light in photonic crystals, which are materials containing a spatially periodic variation of the refractive index commensurate with

  20. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  1. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  2. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  3. Semiconductor photocatalysis principles and applications

    CERN Document Server

    Kisch, Horst

    2014-01-01

    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  4. Progress in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Walton, J.; Gatti, E.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

  5. Semiconductor materials and their properties

    NARCIS (Netherlands)

    Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

    2017-01-01

    Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

  6. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  7. Terahertz Nonlinear Optics in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

  8. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  9. KONSERVASI GENETIK IKAN BETOK (Anabas testudineus Bloch 1792 DI PERAIRAN RAWA, KALIMANTAN SELATAN

    Directory of Open Access Journals (Sweden)

    Slamat Slamat

    2016-05-01

    Full Text Available Penelitian ini dilakukan dengan menggunakan sample ikan betok (Anabas testudineus Bloch 1972 yang berasal dari perairan rawa Kalimantan Selatan, dengan tujuan untuk mendeskripsikan keragaman  genetik dan aspek konservasinya dengan metode amplifikasi mtDNA. Proses amplifikasi mtDNA ikan betok terjadi di daerah D Loop.  Hasil analisis mt-DNA D Loop ikan betok menunjukkan bahwa, analisis keseimbangan populasi Hardy-Weinberg  berkisar antara 0,02 - 0,09, sedangkan haplotipe tertinggi terdapat pada rawa monoton (0,9384, kemudian tadah hujan (0,7111 dan pasang surut (0,6.  Heterozigositas ditemukan unik pada populasi rawa monoton (BAAAA dan rawa pasang surut (BAACA dan umum di temukan di ketiga ekosistem rawa (AAABA.  Ikan betok di bagi menjadi dua stok populasi yaitu populasi rawa monoton dan pasang surut serta stok tadah hujan.  Konsep utama dalam konservasi genetik adalah fitness population dimana populasi dipertahankan minimal 500 ekor/kawasan. Untuk meningkatkan keragaman genetik ikan betok, dilakukan dengan cara introduksi individu-individu baru yang memiliki keragaman genetik yang lebih tinggi kedalam populasi lokal, restocking dan membuat kawasan suaka yang dilindungi oleh Dinas Perikanan setempat bersama-sama dengan masyarakat di sekitar perairan rawa tersebut.   The research was conducted using climbing perch samples originated from the swampy waters of the southern Borneo, and the objektive of this study to investigate the genetic diversity and the conservation aspect using mtDNA amplification method.  mtDNA amplification process occurs in the D Loop region.  The results of the analysis of D-Loop mtDNA of climbing perch showed that, the analysis of Hardy-Weinberg equilibrium population ranged from 0.02 to 0.09, while the highest haplotypes found in swamp bogs (monotonic (0.9384 then rainfed (0.7111 and tides (0.6. Heterozygosity was found uniquely in the swamp monotonic population (BAAAA and marsh tides (BAACA and common in all

  10. ESTIMASI KELIMPAHAN IKAN GABUS (Channa striata Bloch, 1793 DENGAN METODE HIDROAKUSTIK DI SUNGAI LEMPUING, SUMATERA SELATAN

    Directory of Open Access Journals (Sweden)

    Zulkarnaen Fahmi

    2016-03-01

    Full Text Available Kegiatan pengkajian stok sumberdaya ikan yang dilakukan secara berkala bertujuan untuk optimasi pemanfaatan sumberdaya perikanan bagi kegiatan perikanan tangkap. Kegiatan pengkajian stok ikandengan survey akustik di perairan Lubuk Lampam telah dilakukan pada tahun 2011 sebanyak 2 (dua kali dengan interval waktu 3 (tiga bulan untuk melihat perubahan kelimpahan ikan gabus (Channa striatadi perairan tersebut. Ekstraksi data akustik meliputi data sebaran kelimpahan dan distribusi ukuran ikan dilakukan untuk melihat keragaman (variance nilai yang diperoleh. Hasil penelitian menunjukkan bahwa estimasi rata-rata kelimpahan ikan pada bulan Maret sebesar 7.53 ± 1.33 ekor/m2  lebih rendah dibandingkan pada bulan Mei sebesar 53.11 ± 9.43  ekor/m2  . Biomass ikan pada bulan Maret sebesar 75.59 ± 30.22 kg/ha lebih rendah dibandingkan pada bulan Mei sebesar 521 ± 65.01 kg/ha. Nilai rataan target strength ikan tunggal yang terdeteksi pada bulan Maret sebesar -54.81 ± 0.9 dB lebih rendah dibandingkan pada bulan Mei sebesar -50.03 ± 0.35 dB. Estimasi kelimpahan dan distribusi ikan di sungai Lempuing menunjukkan nilai keragaman (variance yang lebih rendah pada bulan Maret dibandingkan dengan bulan Mei 2011 untuk parameter kelimpahan dan biomass ikan, sedangkan untuk nilai rataan target strength ikan menunjukkan sebaliknya. Fish assessment using hydroacoustic in inland water was conducted to optimize fish exploitation activity. Successive hydroacoustic survey was conducted twice with interval three months in 2011 to estimated distribution fish abundance and size distribution of snakehead fish (Channa striata Bloch, 1793 in Lempuing River, South Sumatera. Reability test was conducted on hydroacoustic data including data distribution and abundance of fish size distribution to obtain edvariance value. The results showed that the average estimate abundance of fish on March about 7.53 ± 1.33 fish/m2 lower than in the month of May at 53.11 ± 9.43 fish/m2

  11. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  12. Full-angle Negative Reflection with An Ultrathin Acoustic Gradient Metasurface: Floquet-Bloch Modes Perspective and Experimental Verification

    KAUST Repository

    Liu, Bingyi

    2017-07-01

    Metasurface with gradient phase response offers new alternative for steering the propagation of waves. Conventional Snell\\'s law has been revised by taking the contribution of local phase gradient into account. However, the requirement of momentum matching along the metasurface sets its nontrivial beam manipulation functionality within a limited-angle incidence. In this work, we theoretically and experimentally demonstrate that the acoustic gradient metasurface supports the negative reflection for full-angle incidence. The mode expansion theory is developed to help understand how the gradient metasurface tailors the incident beams, and the full-angle negative reflection occurs when the first negative order Floquet-Bloch mode dominates. The coiling-up space structures are utilized to build desired acoustic gradient metasurface and the full-angle negative reflections have been perfectly verified by experimental measurements. Our work offers the Floquet-Bloch modes perspective for qualitatively understanding the reflection behaviors of the acoustic gradient metasurface and enables a new degree of the acoustic wave manipulating.

  13. Influence of rotating in-plane field on vertical Bloch lines in the walls of second kind of dumbbell domains

    International Nuclear Information System (INIS)

    Sun, H.Y.; Hu, H.N.; Sun, Y.P.; Nie, X.F.

    2004-01-01

    Influence of rotating in-plane field on vertical Bloch lines in the walls of second kind of dumbbell domains (IIDs) was investigated, and a critical in-plane field range [H ip 1 ,H ip 2 ] of which vertical-Bloch lines (VBLs) annihilated in IIDs is found under rotating in-plane field (H ip 1 is the maximal critical in-plane-field of which hard domains remain stable, H ip 2 is the minimal critical in-plane-field of which all of the hard domains convert to soft bubbles (SBs, without VBLs)). It shows that the in-plane field range [H ip 1 , H ip 2 ] changes with the change of the rotating angle Δφ H ip 1 maintains stable, while H ip 2 decreases with the decreasing of rotating angle Δφ. Comparing it with the spontaneous shrinking experiment of IIDs under both bias field and in-plane field, we presume that under the application of in-plane field there exists a direction along which the VBLs in the domain walls annihilate most easily, and it is in the direction that domain walls are perpendicular to the in-plane field

  14. Plasmonic Photonic-Crystal Slabs: Visualization of the Bloch Surface Wave Resonance for an Ultrasensitive, Robust and Reusable Optical Biosensor

    Directory of Open Access Journals (Sweden)

    Alexander V. Baryshev

    2014-12-01

    Full Text Available A one-dimensional photonic crystal (PhC with termination by a metal film—a plasmonic photonic-crystal slab—has been theoretically analyzed for its optical response at a variation of the dielectric permittivity of an analyte and at a condition simulating the molecular binding event. Visualization of the Bloch surface wave resonance (SWR was done with the aid of plasmon absorption in a dielectric/metal/dielectric sandwich terminating a PhC. An SWR peak in spectra of such a plasmonic photonic crystal (PPhC slab comprising a noble or base metal layer was shown to be sensitive to a negligible variation of refractive index of a medium adjoining to the slab. As a consequence, the considered PPhC-based optical sensors exhibited an enhanced sensitivity and a good robustness in comparison with the conventional surface-plasmon and Bloch surface wave sensors. The PPhC biosensors can be of practical importance because the metal layer is protected by a capping dielectric layer from contact with analytes and, consequently, from deterioration.

  15. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  16. Bernoulli's Equation

    Indian Academy of Sciences (India)

    regarding nature of forces hold equally for liquids, even though the ... particle. Figure A. A fluid particle is a very small imaginary blob of fluid, here shown sche- matically in .... picture gives important information about the flow field. ... Bernoulli's equation is derived assuming ideal flow, .... weight acting in the flow direction S is.

  17. Relativistic equations

    International Nuclear Information System (INIS)

    Gross, F.

    1986-01-01

    Relativistic equations for two and three body scattering are discussed. Particular attention is paid to relativistic three body kinetics because of recent form factor measurements of the Helium 3 - Hydrogen 3 system recently completed at Saclay and Bates and the accompanying speculation that relativistic effects are important for understanding the three nucleon system. 16 refs., 4 figs

  18. Semiconductor radiation detector

    Science.gov (United States)

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  19. Semiconductor testing method

    International Nuclear Information System (INIS)

    Brown, Stephen.

    1992-01-01

    In a method of avoiding use of nuclear radiation, eg gamma rays, X-rays, electron beams, for testing semiconductor components for resistance to hard radiation, which hard radiation causes data corruption in some memory devices and 'latch-up' in others, similar fault effects can be achieved using a xenon or other 'light' flash gun even though the penetration of light is significantly less than that of gamma rays. The method involves treating a device with gamma radiation, measuring a particular fault current at the onset of a fault event, repeating the test with light to confirm the occurrence of the fault event at the same measured fault current, and using the fault current value as a reference for future tests using light on similar devices. (author)

  20. Radial semiconductor drift chambers

    International Nuclear Information System (INIS)

    Rawlings, K.J.

    1987-01-01

    The conditions under which the energy resolution of a radial semiconductor drift chamber based detector system becomes dominated by the step noise from the detector dark current have been investigated. To minimise the drift chamber dark current attention should be paid to carrier generation at Si/SiO 2 interfaces. This consideration conflicts with the desire to reduce the signal risetime: a higher drift field for shorter signal pulses requires a larger area of SiO 2 . Calculations for the single shaping and pseudo Gaussian passive filters indicate that for the same degree of signal risetime sensitivity in a system dominated by the step noise from the detector dark current, the pseudo Gaussian filter gives only a 3% improvement in signal/noise and 12% improvement in rate capability compared with the single shaper performance. (orig.)

  1. Energy distribution in semiconductors

    International Nuclear Information System (INIS)

    Ance, C.

    1979-01-01

    For various semiconductors the dispersive energy Esub(d) defined in the Wemple-Didomenico model is connected with the covalent and ionic energies Esub(h) and C. A continuous curve of ionicity against the ratio of the two energies Esub(A) and Esub(B), connected to Esub(h) and C is reported. Afromowitz's model is applied to the ternary compounds Gasub(1-x)Alsub(x)Sb using optical decomposition. From these results the average energy gap Esub(g) is given by Esub(g) = D 0 M 0 sup((IB))/(epsilon 1 (0)-1) where M 0 sup((IB)) is the interband transition contribution to the optical moment M 0 . (author)

  2. Organic Semiconductor Photovoltaics

    Science.gov (United States)

    Sariciftci, Niyazi Serdar

    2005-03-01

    Recent developments on organic photovoltaic elements are reviewed. Semiconducting conjugated polymers and molecules as well as nanocrystalline inorganic semiconductors are used in composite thin films. The photophysics of such photoactive devices is based on the photoinduced charge transfer from donor type semiconducting molecules onto acceptor type molecules such as Buckminsterfullerene, C60 and/or nanoparticles. Similar to the first steps in natural photosynthesis, this photoinduced electron transfer leads to a number of potentially interesting applications which include sensitization of the photoconductivity and photovoltaic phenomena. Examples of photovoltaic architectures are discussed with their potential in terrestrial solar energy conversion. Several materials are introduced and discussed for their photovoltaic activities. Furthermore, nanomorphology has been investigated with AFM, SEM and TEM. The morphology/property relationship for a given photoactive system is found to be a major effect.

  3. Heteroclinic dynamics of coupled semiconductor lasers with optoelectronic feedback.

    Science.gov (United States)

    Shahin, S; Vallini, F; Monifi, F; Rabinovich, M; Fainman, Y

    2016-11-15

    Generalized Lotka-Volterra (GLV) equations are important equations used in various areas of science to describe competitive dynamics among a population of N interacting nodes in a network topology. In this Letter, we introduce a photonic network consisting of three optoelectronically cross-coupled semiconductor lasers to realize a GLV model. In such a network, the interaction of intensity and carrier inversion rates, as well as phases of laser oscillator nodes, result in various dynamics. We study the influence of asymmetric coupling strength and frequency detuning between semiconductor lasers and show that inhibitory asymmetric coupling is required to achieve consecutive amplitude oscillations of the laser nodes. These studies were motivated primarily by the dynamical models used to model brain cognitive activities and their correspondence with dynamics obtained among coupled laser oscillators.

  4. Computational models for the berry phase in semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Prabhakar, S., E-mail: rmelnik@wlu.ca; Melnik, R. V. N., E-mail: rmelnik@wlu.ca [M2NeT Lab, Wilfrid Laurier University, 75 University Ave W, Waterloo, ON N2L 3C5 (Canada); Sebetci, A. [Department of Mechanical Engineering, Mevlana University, 42003, Konya (Turkey)

    2014-10-06

    By developing a new model and its finite element implementation, we analyze the Berry phase low-dimensional semiconductor nanostructures, focusing on quantum dots (QDs). In particular, we solve the Schrödinger equation and investigate the evolution of the spin dynamics during the adiabatic transport of the QDs in the 2D plane along circular trajectory. Based on this study, we reveal that the Berry phase is highly sensitive to the Rashba and Dresselhaus spin-orbit lengths.

  5. Magnetic excitations in ferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

    2009-01-01

    Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

  6. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  7. The annihilation of vertical-Bloch lines in the walls of hard domains to which bias fields and in-plane fields are alternately applied

    International Nuclear Information System (INIS)

    Sun, H.Y.; Hu, H.N.; Nie, X.F.

    2001-01-01

    The annihilation of vertical-Bloch lines in magnetic domain walls of the ordinary hard bubbles, to which both bias fields and in-plane fields are alternately applied, is investigated experimentally. The influence of an in-plane magnetic field on ordinary hard bubbles (OHB), dumbbell domains of the first kind (ID), and dumbbell domains of the second kind (IID) was analyzed, and a critical in-plane field range [H ip 0 ,H ip 2 ] for vertical Bloch line (VBL) annihilation was found. For the three types of hard domains (H ip 0 is the minimum critical in-plane field of VBLs which begin to be unstable, H ip 2 is the minimum critical in-plane field which only needs to be applied one time for collapse of all OHBs), the critical field range is the same with H ip 0 ≅8πM s . We hypothesize that there exists a direction along which the vertical-Bloch lines in the domain walls are annihilated most easily. It is also observed that the stability of vertical-Bloch lines in the domain walls does not depend on the initial state. This provides a more detailed description of the minimum critical in-plane field than previously known

  8. Analysis of fluctuations in semiconductor devices

    Science.gov (United States)

    Andrei, Petru

    The random nature of ion implantation and diffusion processes as well as inevitable tolerances in fabrication result in random fluctuations of doping concentrations and oxide thickness in semiconductor devices. These fluctuations are especially pronounced in ultrasmall (nanoscale) semiconductor devices when the spatial scale of doping and oxide thickness variations become comparable with the geometric dimensions of devices. In the dissertation, the effects of these fluctuations on device characteristics are analyzed by using a new technique for the analysis of random doping and oxide thickness induced fluctuations. This technique is universal in nature in the sense that it is applicable to any transport model (drift-diffusion, semiclassical transport, quantum transport etc.) and it can be naturally extended to take into account random fluctuations of the oxide (trapped) charges and channel length. The technique is based on linearization of the transport equations with respect to the fluctuating quantities. It is computationally much (a few orders of magnitude) more efficient than the traditional Monte-Carlo approach and it yields information on the sensitivity of fluctuations of parameters of interest (e.g. threshold voltage, small-signal parameters, cut-off frequencies, etc.) to the locations of doping and oxide thickness fluctuations. For this reason, it can be very instrumental in the design of fluctuation-resistant structures of semiconductor devices. Quantum mechanical effects are taken into account by using the density-gradient model as well as through self-consistent Poisson-Schrodinger computations. Special attention is paid to the presenting of the technique in a form that is suitable for implementation on commercial device simulators. The numerical implementation of the technique is discussed in detail and numerous computational results are presented and compared with those previously published in literature.

  9. Quantum transport in semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kubis, Tillmann Christoph

    2009-11-15

    The main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the presence of phonons and device imperfections. It is well known that the nonequilibrium Green's function method (NEGF) is a very general and all-inclusive scheme for the description of exactly this kind of transport problem. Although the NEGF formalism has been derived in the 1960's, textbooks about this formalism are still rare to find. Therefore, we introduce the NEGF formalism, its fundamental equations and approximations in the first part of this thesis. Thereby, we extract ideas of several seminal contributions on NEGF in literature and augment this by some minor derivations that are hard to find. Although the NEGF method has often been numerically implemented on transport problems, all current work in literature is based on a significant number of approximations with often unknown influence on the results and unknown validity limits. Therefore, we avoid most of the common approximations and implement in the second part of this thesis the NEGF formalism as exact as numerically feasible. For this purpose, we derive several new scattering self-energies and introduce new self-adaptive discretizations for the Green's functions and self-energies. The most important improvements of our NEGF implementation, however, affect the momentum and energy conservation during incoherent scattering, the Pauli blocking, the current conservation within and beyond the device and the reflectionless propagation through open device boundaries. Our uncommonly accurate implementation of the NEGF method allows us to analyze and assess most of the common approximations and to unveil numerical artifacts that have plagued previous approximate implementations in literature. Furthermore, we apply our numerical implementation of the NEGF method on the stationary electron transport in THz quantum cascade lasers (QCLs) and answer

  10. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1990-01-01

    The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

  11. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

  12. Semiconductor device comprising a pn-heterojunction

    NARCIS (Netherlands)

    2007-01-01

    An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

  13. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  14. Theory of semiconductor lasers from basis of quantum electronics to analyses of the mode competition phenomena and noise

    CERN Document Server

    Yamada, Minoru

    2014-01-01

    This book provides a unified and complete theory for semiconductor lasers, covering topics ranging from the principles of classical and quantum mechanics to highly advanced levels for readers who need to analyze the complicated operating characteristics generated in the real application of semiconductor lasers.   The author conducts a theoretical analysis especially on the instabilities involved in the operation of semiconductor lasers. A density matrix into the theory for semiconductor lasers is introduced and the formulation of an improved rate equation to help understand the mode competition phenomena which cause the optical external feedback noise is thoroughly described from the basic quantum mechanics. The derivation of the improved rate equation will allow readers to extend the analysis for the different types of semiconductor materials and laser structures they deal with.   This book is intended not only for students and academic researchers but also for engineers who develop lasers for the market, ...

  15. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

    NARCIS (Netherlands)

    2008-01-01

    The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

  16. Selective, electrochemical etching of a semiconductor

    Science.gov (United States)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  17. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  18. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  19. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  20. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  1. Semiconductor technology program. Progress briefs

    Science.gov (United States)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  2. Semiconductor radiation detectors. Device physics

    International Nuclear Information System (INIS)

    Lutz, G.

    2007-01-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  3. Self-assembling peptide semiconductors

    Science.gov (United States)

    Tao, Kai; Makam, Pandeeswar; Aizen, Ruth; Gazit, Ehud

    2017-01-01

    Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems. PMID:29146781

  4. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  5. Exact solutions of a nonpolynomially nonlinear Schrodinger equation

    International Nuclear Information System (INIS)

    Parwani, R.; Tan, H.S.

    2007-01-01

    A nonlinear generalisation of Schrodinger's equation had previously been obtained using information-theoretic arguments. The nonlinearities in that equation were of a nonpolynomial form, equivalent to the occurrence of higher-derivative nonlinear terms at all orders. Here we construct some exact solutions to that equation in 1+1 dimensions. On the half-line, the solutions resemble (exponentially damped) Bloch waves even though no external periodic potential is included. The solutions are nonperturbative as they do not reduce to solutions of the linear theory in the limit that the nonlinearity parameter vanishes. An intriguing feature of the solutions is their infinite degeneracy: for a given energy, there exists a very large arbitrariness in the normalisable wavefunctions. We also consider solutions to a q-deformed version of the nonlinear equation and discuss a natural discretisation implied by the nonpolynomiality. Finally, we contrast the properties of our solutions with other solutions of nonlinear Schrodinger equations in the literature and suggest some possible applications of our results in the domains of low-energy and high-energy physics

  6. Quantum features of semiconductor quantum dots

    International Nuclear Information System (INIS)

    Lozada-Cassou, M.; Dong Shihai; Yu Jiang

    2004-01-01

    The exact solutions of the two-dimensional Schrodinger equation with the position-dependent mass for the square well potential in the semiconductor quantum dots system are obtained. The eigenvalues, which are closely related to the position-dependent masses μ1 and μ2, the potential well depth V0 and the radius of the quantum dots r0, can be calculated from two boundary conditions. We generalize this quantum system to three-dimensional case. The special cases for the angular momentum quantum number l=0, 1, 2 are studied in some detail. We find that the energy levels are proportional to the parameters μ2, V0 and r0 for l=0. The relations between them for l=1, 2 become very complicated. The scattering states of this quantum system are mentioned briefly

  7. Wake fields in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1994-05-01

    It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

  8. Semiconductor research with reactor neutrons

    International Nuclear Information System (INIS)

    Kimura, Itsuro

    1992-01-01

    Reactor neutrons play an important role for characterization of semiconductor materials as same as other advanced materials. On the other hand reactor neutrons bring about not only malignant irradiation effects called radiation damage, but also useful effects such as neutron transmutation doping and defect formation for opto-electronics. Research works on semiconductor materials with the reactor neutrons of the Kyoto University Reactor (KUR) are briefly reviewed. In this review, a stress is laid on the present author's works. (author)

  9. Semiconductor crystal high resolution imager

    Science.gov (United States)

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  10. Dissipative chaos in semiconductor superlattices

    Directory of Open Access Journals (Sweden)

    F. Moghadam

    2008-03-01

    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  11. Reducing leakage current in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

    2018-03-06

    A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

  12. Optical orientation in ferromagnet/semiconductor hybrids

    International Nuclear Information System (INIS)

    Korenev, V L

    2008-01-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

  13. Optical orientation in ferromagnet/semiconductor hybrids

    Science.gov (United States)

    Korenev, V. L.

    2008-11-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

  14. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    OpenAIRE

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  15. Kinetic theory of thermotransport of polar semiconductors: Degenerate limit

    Energy Technology Data Exchange (ETDEWEB)

    Rangel-Huerta, A. [Facultad de Ciencias de la Computacion Benemerita, Universidad Autonoma de Puebla, 14 Sur y San Claudio C.U., Puebla 72570 (Mexico); Rodriguez-Meza, M.A. [Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico D.F. 11801 (Mexico)

    2005-08-01

    We develop a kinetic theory approach from the semiclassical Boltzmann transport equation for the thermotransport of electrons in degenerate polar semiconductors. The method of moments applied to the Boltzmann equation gives us a set of hydrodynamical equations which are closed up to thirteen relevant variables, including energy density, the stress tensor and the heat flux in the description. The closure of the balance equations is achieved by evaluating the higher order momenta, as well as the production terms, through a non equilibrium distribution function coming from the maximum entropy principle. We assume that electronoptical polar phonon interaction is the leading scattering process in order to obtain analytical expressions for both, the characteristic relaxation times and the usual thermoelectric coefficients. We also show that in this case the Onsager symmetry relationship is not satisfied. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Semiconductors for plasmonics and metamaterials

    DEFF Research Database (Denmark)

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

  17. Ripening of Semiconductor Nanoplatelets.

    Science.gov (United States)

    Ott, Florian D; Riedinger, Andreas; Ochsenbein, David R; Knüsel, Philippe N; Erwin, Steven C; Mazzotti, Marco; Norris, David J

    2017-11-08

    Ostwald ripening describes how the size distribution of colloidal particles evolves with time due to thermodynamic driving forces. Typically, small particles shrink and provide material to larger particles, which leads to size defocusing. Semiconductor nanoplatelets, thin quasi-two-dimensional (2D) particles with thicknesses of only a few atomic layers but larger lateral dimensions, offer a unique system to investigate this phenomenon. Experiments show that the distribution of nanoplatelet thicknesses does not defocus during ripening, but instead jumps sequentially from m to (m + 1) monolayers, allowing precise thickness control. We investigate how this counterintuitive process occurs in CdSe nanoplatelets. We develop a microscopic model that treats the kinetics and thermodynamics of attachment and detachment of monomers as a function of their concentration. We then simulate the growth process from nucleation through ripening. For a given thickness, we observe Ostwald ripening in the lateral direction, but none perpendicular. Thicker populations arise instead from nuclei that capture material from thinner nanoplatelets as they dissolve laterally. Optical experiments that attempt to track the thickness and lateral extent of nanoplatelets during ripening appear consistent with these conclusions. Understanding such effects can lead to better synthetic control, enabling further exploration of quasi-2D nanomaterials.

  18. A semiconductor laser device

    Energy Technology Data Exchange (ETDEWEB)

    Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

    1984-03-17

    A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

  19. Semiconductor integrated circuits

    International Nuclear Information System (INIS)

    Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

    1979-01-01

    An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

  20. Impurity gettering in semiconductors

    Science.gov (United States)

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  1. Semiconductor acceleration sensor

    Science.gov (United States)

    Ueyanagi, Katsumichi; Kobayashi, Mitsuo; Goto, Tomoaki

    1996-09-01

    This paper reports a practical semiconductor acceleration sensor especially suited for automotive air bag systems. The acceleration sensor includes four beams arranged in a swastika structure. Two piezoresistors are formed on each beam. These eight piezoresistors constitute a Wheatstone bridge. The swastika structure of the sensing elements, an upper glass plate and a lower glass plate exhibit the squeeze film effect which enhances air dumping, by which the constituent silicon is prevented from breakdown. The present acceleration sensor has the following features. The acceleration force component perpendicular to the sensing direction can be cancelled. The cross-axis sensitivity is less than 3 percent. And, the erroneous offset caused by the differences between the thermal expansion coefficients of the constituent materials can be canceled. The high aspect ratio configuration realized by plasma etching facilitates reducing the dimensions and improving the sensitivity of the acceleration sensor. The present acceleration sensor is 3.9 mm by 3.9 mm in area and 1.2 mm in thickness. The present acceleration sensor can measure from -50 to +50 G with sensitivity of 0.275 mV/G and with non-linearity of less than 1 percent. The acceleration sensor withstands shock of 3000 G.

  2. Narrow Bloch walls and intrinsic characteristics of the pseudoternary Nd14Fe78-xMnxC8 systems

    International Nuclear Information System (INIS)

    Xing, F.; Ho, W.W.

    1990-01-01

    The lattice constants of Nd 14 Fe 78-x Mn x C 8 compounds decrease with the increase of Mn context x and have a minimum at about x=14. The Curie temperature T c decreases linearly and falls off below room temperature beyond x=14. The strong reduction of the saturation magnetization and T c are attributed to the antiparallel alignment of the Mn and Fe atoms moments. The behavior of magnetization and magnetization reversal in the high-Mn-containing samples at low temperature can be interpreted by the narrow domain wall effect. The relationship of the intrinsic coercive force i H c on temperature agrees well with the exponential formula of the narrow Bloch wall

  3. High-Q contacted ring microcavities with scatterer-avoiding “wiggler” Bloch wave supermode fields

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yangyang, E-mail: yangyang.liu@colorado.edu; Popović, Miloš A., E-mail: milos.popovic@colorado.edu [Nanophotonic Systems Laboratory, Department of Electrical, Computer, and Energy Engineering, University of Colorado, Boulder, Colorado 80309 (United States)

    2014-05-19

    High-Q ring resonators with contacts to the waveguide core provide a versatile platform for various applications in chip-scale optomechanics, thermo-, and electro-optics. We propose and demonstrate azimuthally periodic contacted ring resonators based on multi-mode Bloch matching that support contacts on both the inner and outer radius edges with small degradation to the optical quality factor (Q). Radiative coupling between degenerate modes of adjacent radial spatial order leads to imaginary frequency (Q) splitting and a scatterer avoiding high-Q “wiggler” supermode field. We experimentally measure Qs up to 258 000 in devices fabricated in a silicon device layer on buried oxide undercladding and up to 139 000 in devices fully suspended in air using an undercut step. Wiggler supermodes are true modes of the microphotonic system that offer additional degrees of freedom in electrical, thermal, and mechanical design.

  4. Differential Equations Compatible with KZ Equations

    International Nuclear Information System (INIS)

    Felder, G.; Markov, Y.; Tarasov, V.; Varchenko, A.

    2000-01-01

    We define a system of 'dynamical' differential equations compatible with the KZ differential equations. The KZ differential equations are associated to a complex simple Lie algebra g. These are equations on a function of n complex variables z i taking values in the tensor product of n finite dimensional g-modules. The KZ equations depend on the 'dual' variable in the Cartan subalgebra of g. The dynamical differential equations are differential equations with respect to the dual variable. We prove that the standard hypergeometric solutions of the KZ equations also satisfy the dynamical equations. As an application we give a new determinant formula for the coordinates of a basis of hypergeometric solutions

  5. Frequency locking, quasiperiodicity, subharmonic bifurcations and chaos in high frequency modulated stripe geometry DH semiconductor lasers

    International Nuclear Information System (INIS)

    Zhao Yiguang

    1991-01-01

    The method of obtaining self-consistent solutions of the field equation and the rate equations of photon density and carrier concentration has been used to study frequecny locking, quasiperiodicity, subharmonic bifurcations and chaos in high frequency modulated stripe geometry DH semiconductor lasers. The results show that the chaotic behavior arises in self-pulsing stripe geometry semiconductor lasers. The route to chaos is not period-double, but quasiperiodicity to chaos. All of the results agree with the experiments. Some obscure points in previous theory about chaos have been cleared up

  6. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  7. 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics

    CERN Document Server

    Li, Simon

    2012-01-01

    Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD.  This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D.  It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations.  Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc. Provides a vivid, internal view of semiconductor devices, through 3D TCAD simulation; Includes comprehensive coverage of  TCAD simulations for both optic and electronic devices, from nano-scale to high-voltage high-power devices; Presents material in a hands-on, tutorial fashion so that industry practitioners will find maximum utility; Includes a comprehensive library of devices, re...

  8. Identifying semiconductors by d.c. ionization conductivity

    International Nuclear Information System (INIS)

    Derenzo, Stephen E.; Bourret-Courchesne, Edith; James, Floyd J.; Klintenberg, Mattias K.; Porter-Chapman, Yetta; Wang, Jie; Weber, Marvin J.

    2006-01-01

    We describe a method for identifying semiconductor radiation detector materials based on the mobility of internally generated electrons and holes. It was designed for the early stages of exploration, when samples are not available as single crystals, but as crystalline powders. Samples are confined under pressure in an electric field and the increase in current resulting from exposure to a high-intensity source of 60Co gamma rays (i.e. the ionization current) is measured. We find that for known semiconductors the d.c. ionization current depends on voltage according to the Hecht equation, and for known insulators the d.c. ionization current is below our detection limits. This shows that the method can identify semiconductors in spite of significant carrier trapping. Using this method, we have determined that BiOI, PbIF,BiPbO2Cl, BiPbO2Br, BiPbO2I, Bi2GdO4Cl, Pb3O2I2, and Pb5O4I2 are semiconductors

  9. Semiconductor optoelectronic infrared spectroscopy

    International Nuclear Information System (INIS)

    Hollingworth, A.R.

    2001-08-01

    We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

  10. High pressure semiconductor physics I

    CERN Document Server

    Willardson, R K; Paul, William; Suski, Tadeusz

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tra...

  11. Introduction to cathodoluminescence in semiconductors

    International Nuclear Information System (INIS)

    Dussac, M.

    1985-01-01

    The use of cathodoluminescence in a scanning electron microscope leads to acquire a spectrum in a place of the sample surface, or to register the intensity profile of a special emission band along a scanning line, or also to realize a map of the irradiated sample. Composition variations can then, at ambient temperature, be determined, also defects can be shown, together with grain joints and dislocations, radiative and non radiative regions can be distinguished and, at low temperature, elementary processes of luminescence can be studied and impurities identified in semiconductors. Through this analysis method is applicable to every insulating or semiconductor material (that is to say to every material having a gap), in this article only crystalline semi-conductor will be studied [fr

  12. Catalysts, Protection Layers, and Semiconductors

    DEFF Research Database (Denmark)

    Chorkendorff, Ib

    2015-01-01

    Hydrogen is the simplest solar fuel to produce and in this presentation we shall give a short overview of the pros and cons of various tandem devices [1]. The large band gap semiconductor needs to be in front, but apart from that we can chose to have either the anode in front or back using either...... acid or alkaline conditions. Since most relevant semiconductors are very prone to corrosion the advantage of using buried junctions and using protection layers offering shall be discussed [2-4]. Next we shall discuss the availability of various catalysts for being coupled to these protections layers...... and how their stability may be evaluated [5, 6]. Examples of half-cell reaction using protection layers for both cathode and anode will be discussed though some of recent examples under both alkaline and acidic conditions. Si is a very good low band gap semiconductor and by using TiO2 as a protection...

  13. High mobility emissive organic semiconductor

    Science.gov (United States)

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

  14. Thiophene-Based Organic Semiconductors.

    Science.gov (United States)

    Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

    2017-10-24

    Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

  15. Organic semiconductors in sensor applications

    CERN Document Server

    Malliaras, George; Owens, Róisín

    2008-01-01

    Organic semiconductors offer unique characteristics such as tunability of electronic properties via chemical synthesis, compatibility with mechanically flexible substrates, low-cost manufacturing, and facile integration with chemical and biological functionalities. These characteristics have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this rapidly emerging field by discussing both optical and electrical sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques to enhance specificity are outlined, and models for the sensor response are described.

  16. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  17. Introduction to semiconductor manufacturing technology

    CERN Document Server

    2012-01-01

    IC chip manufacturing processes, such as photolithography, etch, CVD, PVD, CMP, ion implantation, RTP, inspection, and metrology, are complex methods that draw upon many disciplines. [i]Introduction to Semiconductor Manufacturing Technologies, Second Edition[/i] thoroughly describes the complicated processes with minimal mathematics, chemistry, and physics; it covers advanced concepts while keeping the contents accessible to readers without advanced degrees. Designed as a textbook for college students, this book provides a realistic picture of the semiconductor industry and an in-depth discuss

  18. Wide gap semiconductor microwave devices

    International Nuclear Information System (INIS)

    Buniatyan, V V; Aroutiounian, V M

    2007-01-01

    A review of properties of wide gap semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, GaN and AlGaN/GaN that are relevant to electronic, optoelectronic and microwave applications is presented. We discuss the latest situation and perspectives based on experimental and theoretical results obtained for wide gap semiconductor devices. Parameters are taken from the literature and from some of our theoretical works. The correspondence between theoretical results and parameters of devices is critically analysed. (review article)

  19. Detection of radioactivity by semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1991-01-01

    The class of detectors discussed in this chapter has a responsive component involving a diode, a junction between two types of semiconductor materials. Although diode detectors are not particularly efficient in counting radioactive emissions, they are superior to other commercially available detectors in spectroscopy. Consequently, diode detectors are used extensively for quanlitative purposes and for quantitative purposes when mixtures of radionuclides are present, not the usual situation with biological or medical research. Topics addressed in this chapter are as follows: Band Theory; Semiconductors and Junctions; and Radiation Detectors. 6 refs., 14 figs

  20. Modeling of semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  1. Semiconductor X-ray spectrometers

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1978-02-01

    An outline is given of recent developments in particle and photon induced x-ray fluorescence (XRF) analysis. Following a brief description of the basic mechanism of semiconductor detector operation a comparison is made between semiconductor detectors, scintillators and gas filled proportional devices. Detector fabrication and cryostat design are described in more detail and the effects of various device parameters on system performance, such as energy resolution, count rate capability, efficiency, microphony, etc. are discussed. The main applications of these detectors in x-ray fluorescence analysis, electron microprobe analysis, medical and pollution studies are reviewed

  2. Integrating magnetism into semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Zakharchenya, Boris P; Korenev, Vladimir L [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2005-06-30

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  3. Integrating magnetism into semiconductor electronics

    International Nuclear Information System (INIS)

    Zakharchenya, Boris P; Korenev, Vladimir L

    2005-01-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  4. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  5. Theory of spin-polarized transport in ferromagnet-semiconductor structures: Unified description of ballistic and diffusive transport

    International Nuclear Information System (INIS)

    Lipperheide, R.; Wille, U.

    2006-01-01

    A theory of spin-polarized electron transport in ferromagnet-semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductors, is outlined. The aim is to provide a framework for studying the interplay of spin relaxation and transport mechanism in spintronic devices. Transport inside the (nondegenerate) semiconductor is described in terms of a thermoballistic current, in which electrons move ballistically in the electric field arising from internal and external electrostatic potentials, and are thermalized at randomly distributed equilibration points. Spin relaxation is allowed to take place during the ballistic motion. For arbitrary potential profile and arbitrary values of the momentum and spin relaxation lengths, an integral equation for a spin transport function determining the spin polarization in the semiconductor is derived. For field-driven transport in a homogeneous semiconductor, the integral equation can be converted into a second-order differential equation that generalizes the spin drift-diffusion equation. The spin polarization in ferromagnet-semiconductor structures is obtained by matching the spin-resolved chemical potentials at the interfaces, with allowance for spin-selective interface resistances. Illustrative examples are considered

  6. High-order-harmonic generation from solids: The contributions of the Bloch wave packets moving at the group and phase velocities

    Science.gov (United States)

    Du, Tao-Yuan; Huang, Xiao-Huan; Bian, Xue-Bin

    2018-01-01

    We study numerically the Bloch electron wave-packet dynamics in periodic potentials to simulate laser-solid interactions. We introduce an alternative perspective in the coordinate space combined with the motion of the Bloch electron wave packets moving at group and phase velocities under the laser fields. This model interprets the origins of the two contributions (intra- and interband transitions) in the high-order harmonic generation (HHG) processes by investigating the local and global behaviours of the wave packets. It also elucidates the underlying physical picture of the HHG intensity enhancement by means of carrier-envelope phase, chirp, and inhomogeneous fields. It provides a deep insight into the emission of high-order harmonics from solids. This model is instructive for experimental measurements and provides an alternative avenue to distinguish mechanisms of the HHG from solids in different laser fields.

  7. Waveguide based external cavity semiconductor lasers

    NARCIS (Netherlands)

    Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

    2012-01-01

    We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

  8. Influence of phonons on semiconductor quantum emission

    Energy Technology Data Exchange (ETDEWEB)

    Feldtmann, Thomas

    2009-07-06

    A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semiconductor systems is presented. The theory is applied to study quantum dots and phonon-assisted luminescence in bulk semiconductors and heterostructures. (orig.)

  9. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  10. Fundamentals of semiconductors physics and materials properties

    CERN Document Server

    Yu, Peter Y

    2005-01-01

    Provides detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. This textbook emphasizes understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors and features an extensive collection of tables of material parameters, figures, and problems.

  11. 100% spin accumulation in non-half-metallic ferromagnet-semiconductor junctions

    International Nuclear Information System (INIS)

    Petukhov, A G; Niggemann, J; Smelyanskiy, V N; Osipov, V V

    2007-01-01

    We show that the spin polarization of electron density in non-magnetic degenerate semiconductors can achieve 100%. The effect of 100% spin accumulation does not require a half-metallic ferromagnetic contact and can be realized in ferromagnet-semiconductor FM-n + -n junctions even at moderate spin selectivity of the FM-n + contact when the electrons with spin 'up' are extracted from n semiconductor through the heavily doped n + layer into the ferromagnet and the electrons with spin 'down' are accumulated near the n + -n interface. We derived a general equation relating spin polarization of the current to that of the electron density in non-magnetic semiconductors. We found that the effect of complete spin polarization is achieved near the n + -n interface when the concentration of the spin 'up' electrons tends to zero in this region while the diffusion current of these electrons remains finite

  12. NATO Advanced Study Institute on Physics of Submicron Semiconductor Devices

    CERN Document Server

    Ferry, David; Jacoboni, C

    1988-01-01

    The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES...................

  13. Extension of spatiotemporal chaos in glow discharge-semiconductor systems.

    Science.gov (United States)

    Akhmet, Marat; Rafatov, Ismail; Fen, Mehmet Onur

    2014-12-01

    Generation of chaos in response systems is discovered numerically through specially designed unidirectional coupling of two glow discharge-semiconductor systems. By utilizing the auxiliary system approach, [H. D. I. Abarbanel, N. F. Rulkov, and M. M. Sushchik, Phys. Rev. E 53, 4528-4535 (1996)] it is verified that the phenomenon is not a chaos synchronization. Simulations demonstrate various aspects of the chaos appearance in both drive and response systems. Chaotic control is through the external circuit equation and governs the electrical potential on the boundary. The expandability of the theory to collectives of glow discharge systems is discussed, and this increases the potential of applications of the results. Moreover, the research completes the previous discussion of the chaos appearance in a glow discharge-semiconductor system [D. D. Šijačić U. Ebert, and I. Rafatov, Phys. Rev. E 70, 056220 (2004).].

  14. Extension of spatiotemporal chaos in glow discharge-semiconductor systems

    International Nuclear Information System (INIS)

    Akhmet, Marat; Fen, Mehmet Onur; Rafatov, Ismail

    2014-01-01

    Generation of chaos in response systems is discovered numerically through specially designed unidirectional coupling of two glow discharge-semiconductor systems. By utilizing the auxiliary system approach, [H. D. I. Abarbanel, N. F. Rulkov, and M. M. Sushchik, Phys. Rev. E 53, 4528–4535 (1996)] it is verified that the phenomenon is not a chaos synchronization. Simulations demonstrate various aspects of the chaos appearance in both drive and response systems. Chaotic control is through the external circuit equation and governs the electrical potential on the boundary. The expandability of the theory to collectives of glow discharge systems is discussed, and this increases the potential of applications of the results. Moreover, the research completes the previous discussion of the chaos appearance in a glow discharge-semiconductor system [D. D. Šijačić U. Ebert, and I. Rafatov, Phys. Rev. E 70, 056220 (2004).

  15. Nuclear radiation detection by a variband semiconductor

    International Nuclear Information System (INIS)

    Volkov, A.S.

    1981-01-01

    Possibilities of using a variband semiconductor for detecting nuclear radiations are considered. It is shown that the variaband quasielectric field effectively collects charges induced by a nuclear particle only at a small mean free path in the semiconductor (up to 100 μm), the luminescence spectrum of the variband semiconductor when a nuclear particle gets into it, in principle, permits to determine both the energy and mean free path in the semiconductor (even at large mean free paths) [ru

  16. Ultrafast THz Saturable Absorption in Doped Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, Matthias C.

    2011-01-01

    We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.......We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields....

  17. Laser semiconductor diode integrated with frequency doubler

    International Nuclear Information System (INIS)

    Tighineanu, I.; Dorogan, V.; Suruceanu, G.

    2003-01-01

    The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

  18. Diode having trenches in a semiconductor region

    Energy Technology Data Exchange (ETDEWEB)

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  19. Influence of ammonia on forming the toxicity of waters from the surface sources of water supply determined on Carassius auratus gibelio (Bloch, 1782

    Directory of Open Access Journals (Sweden)

    Е. Arystarkhova

    2018-03-01

    Full Text Available Purpose. Determination of the influence of ammonia in waters from surface sources of water supply of Zhytomyr city on forming the toxicity of these waters determined by test-reactions of atypical motor activity of Carassius auratus gibelio (Bloch, 1782 with the use of the «time sampling» method during 2012–2014. Methodology. Biotesting was performed at the Municipal Enterprise "Zhytomyrvodokanal". Water samples were taken once a month time from the Teteriv river reservoirs and tap water network and then placed into aquaria (8 dm3 on a group. Control and experimental groups of fish were formed according to the following scheme: control group — samples of settled (24 hours tap water; experimental group D-1 — water samples from the Denyshivske reservoir; experimental group D-2 — water samples from the Vidsichne water intake. Test specimens were females of C. auratus gibelio. Biotesting was conducted using the «time sampling» method by keeping fish (n=30 in water for 12 hours. The toxicity indexes of waters were calculated on the basis of the following test-reactions: spiral-like and vector movements, jumping out from water, immobilization and death of fish. Statistical processing of study results were performed using cross-correlation and regression analysis in MS Excel 2007 and Statistica-6. Findings. The study showed an effect of ammonia on the toxicity of waters from reservoirs of the Teteriv river that was determined by atypical motor activity with the use of the «time sampling» method, which consisted in the instantaneous fixation of the number of individuals that favored one or another act of behavior. It was shown that females not adapted to the action of ammonia reacted to its concentration in water of more than 0.55 mg/dm3 by disorders in movements. Unlike fish of experience groups, only single pathological acts were observed in the control group. A positive moderate relationship, which had a tendency to an increase, was

  20. Automation and Integration in Semiconductor Manufacturing

    OpenAIRE

    Liao, Da-Yin

    2010-01-01

    Semiconductor automation originates from the prevention and avoidance of frauds in daily fab operations. As semiconductor technology and business continuously advance and grow, manufacturing systems must aggressively evolve to meet the changing technical and business requirements in this industry. Semiconductor manufacturing has been suffering pains from islands of automation. The problems associated with these systems are limited

  1. Semiconductor nanostructures for infrared applications

    NARCIS (Netherlands)

    Zurauskiene, N.; Asmontas, S.; Dargys, A.; Kundrotas, J.; Janssen, G.; Goovaerts, E.; Marcinkevicius, S.; Koenraad, P.M.; Wolter, J.H.; Leon, R.

    2004-01-01

    We present the results of time-resolved photoluminescence (TRPL) and optically detected microwave resonance (ODMR) spectroscopy investigations of semiconductor quantum dots and quantum wells. The ODMR spectra of InAs/GaAs QDs were detected via modulation of the total intensity of the QDs emission

  2. A Brief History of ... Semiconductors

    Science.gov (United States)

    Jenkins, Tudor

    2005-01-01

    The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

  3. Semiconductor radiation detectors: device physics

    National Research Council Canada - National Science Library

    Lutz, Gerhard

    1999-01-01

    ..., including nuclear physics, elementary particle physics, optical and x-ray astronomy, medicine, and materials testing - and the number of applications is growing continually. Closely related, and initiated by the application of semiconductors, is the development of low-noise low-power integrated electronics for signal readout. The success of semicond...

  4. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

    2000-01-01

    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

  5. Ultrafast Spectroscopy of Semiconductor Devices

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Hvam, Jørn Marcher

    1999-01-01

    In this work we present an experimental technique for investigating ultrafast carrier dynamics in semiconductor optical amplifiers at room temperature. These dynamics, influenced by carrier heating, spectral hole-burning and two-photon absorption, are very important for device applications in inf...

  6. Radiation damage in semiconductor detectors

    International Nuclear Information System (INIS)

    Kraner, H.W.

    1981-12-01

    A survey is presented of the important damage-producing interactions in semiconductor detectors and estimates of defect numbers are made for MeV protons, neutrons and electrons. Damage effects of fast neutrons in germanium gamma ray spectrometers are given in some detail. General effects in silicon detectors are discussed and damage constants and their relationship to leakage current is introduced

  7. Integrable motion of curves in self-consistent potentials: Relation to spin systems and soliton equations

    Energy Technology Data Exchange (ETDEWEB)

    Myrzakulov, R.; Mamyrbekova, G.K.; Nugmanova, G.N.; Yesmakhanova, K.R. [Eurasian International Center for Theoretical Physics and Department of General and Theoretical Physics, Eurasian National University, Astana 010008 (Kazakhstan); Lakshmanan, M., E-mail: lakshman@cnld.bdu.ac.in [Centre for Nonlinear Dynamics, School of Physics, Bharathidasan University, Tiruchirapalli 620 024 (India)

    2014-06-13

    Motion of curves and surfaces in R{sup 3} lead to nonlinear evolution equations which are often integrable. They are also intimately connected to the dynamics of spin chains in the continuum limit and integrable soliton systems through geometric and gauge symmetric connections/equivalence. Here we point out the fact that a more general situation in which the curves evolve in the presence of additional self-consistent vector potentials can lead to interesting generalized spin systems with self-consistent potentials or soliton equations with self-consistent potentials. We obtain the general form of the evolution equations of underlying curves and report specific examples of generalized spin chains and soliton equations. These include principal chiral model and various Myrzakulov spin equations in (1+1) dimensions and their geometrically equivalent generalized nonlinear Schrödinger (NLS) family of equations, including Hirota–Maxwell–Bloch equations, all in the presence of self-consistent potential fields. The associated gauge equivalent Lax pairs are also presented to confirm their integrability. - Highlights: • Geometry of continuum spin chain with self-consistent potentials explored. • Mapping on moving space curves in R{sup 3} in the presence of potential fields carried out. • Equivalent generalized nonlinear Schrödinger (NLS) family of equations identified. • Integrability of identified nonlinear systems proved by deducing appropriate Lax pairs.

  8. Electronic states in crystals of finite size quantum confinement of bloch waves

    CERN Document Server

    Ren, Shang Yuan

    2017-01-01

    This book presents an analytical theory of the electronic states in ideal low dimensional systems and finite crystals based on a differential equation theory approach. It provides precise and fundamental understandings on the electronic states in ideal low-dimensional systems and finite crystals, and offers new insights into some of the basic problems in low-dimensional systems, such as the surface states and quantum confinement effects, etc., some of which are quite different from what is traditionally believed in the solid state physics community. Many previous predictions have been confirmed in subsequent investigations by other authors on various relevant problems. In this new edition, the theory is further extended to one-dimensional photonic crystals and phononic crystals, and a general theoretical formalism for investigating the existence and properties of surface states/modes in semi-infinite one-dimensional crystals is developed. In addition, there are various revisions and improvements, including us...

  9. Theory of coherent time-dependent transport in one-dimensional multiband semiconductor super-lattices

    DEFF Research Database (Denmark)

    Rotvig, J.; Smith, H.; Jauho, Antti-Pekka

    1996-01-01

    We present an analytical study of one-dimensional semiconductor superlattices in external electric fields, which may be time dependent. A number of general results for the (quasi)energies and eigenstates are derived. An equation of motion for the density matrix is obtained for a two-band model...

  10. A variance-reduced electrothermal Monte Carlo method for semiconductor device simulation

    Energy Technology Data Exchange (ETDEWEB)

    Muscato, Orazio; Di Stefano, Vincenza [Univ. degli Studi di Catania (Italy). Dipt. di Matematica e Informatica; Wagner, Wolfgang [Weierstrass-Institut fuer Angewandte Analysis und Stochastik (WIAS) Leibniz-Institut im Forschungsverbund Berlin e.V., Berlin (Germany)

    2012-11-01

    This paper is concerned with electron transport and heat generation in semiconductor devices. An improved version of the electrothermal Monte Carlo method is presented. This modification has better approximation properties due to reduced statistical fluctuations. The corresponding transport equations are provided and results of numerical experiments are presented.

  11. Analog direct-modulation behavior of semiconductor laser transmitters using optical FM demodulation

    NARCIS (Netherlands)

    Yabre, G.S.

    1998-01-01

    In this paper, we report a theoretical investigation of the analog modulation performance of a semiconductor laser transmitter which employs the direct optical FM demodulation. This analysis is based on the rate equations in which Langevin noise functions are included. The optical FM response has

  12. A theoretical analysis for gigabit/second pulse code modulation of semiconductor lasers

    DEFF Research Database (Denmark)

    Danielsen, Magnus

    1976-01-01

    Investigation of the rate equations of a semiconductor laser suggests that bit rates of 3-4 Gbit/s can be achieved. Delay, ringing transients, and charge-storage effects can be removed by adjusting the dc-bias current and the peak and width of the current pulse to values prescribed by simple...

  13. A new computational method for simulation of charge transport in semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Holban, I.

    1993-01-01

    An effective computational method for simulation of charge transport in semiconductor radiation detectors is the purpose of the present work. Basic equations for analysis include (1) Poisson's equations, (2) continuity equation for electrons and holes, (3) rate equations for deep levels, (4) current equation for electrons and holes and (5) boundary conditions. The system of equations is discretized and equidistant space and time grids is brought. The nonlinearity of the problem is overcome by using Newton-Raphson iteration scheme. Instead of solving a nonlinear boundary problem we resolve a linear matrix equation. Our computation procedure becomes very efficient using a sparse matrix. The computed program allows to calculate the charge collection efficiency and transient response for arbitrary electric fields when trapping and detrapping effects are present. The earlier literature results are reproduced. (Author)

  14. Magnetic susceptibility of Dirac fermions, Bi-Sb alloys, interacting Bloch fermions, dilute nonmagnetic alloys, and Kondo alloys

    Energy Technology Data Exchange (ETDEWEB)

    Buot, Felix A., E-mail: fbuot@gmu.edu [Computational Materials Science Center, George Mason University, Fairfax, VA 22030 (United States); TCSE Center, Spintronics Group, Physics Department, University of San Carlos, Talamban, Cebu 6000 (Philippines); C& LB Research Institute, Carmen, Cebu 6005 (Philippines); Otadoy, Roland E.S.; Rivero, Karla B. [TCSE Center, Spintronics Group, Physics Department, University of San Carlos, Talamban, Cebu 6000 (Philippines)

    2017-03-01

    Wide ranging interest in Dirac Hamiltonian is due to the emergence of novel materials, namely, graphene, topological insulators and superconductors, the newly-discovered Weyl semimetals, and still actively-sought after Majorana fermions in real materials. We give a brief review of the relativistic Dirac quantum mechanics and its impact in the developments of modern physics. The quantum band dynamics of Dirac Hamiltonian is crucial in resolving the giant diamagnetism of bismuth and Bi-Sb alloys. Quantitative agreement of the theory with the experiments on Bi-Sb alloys has been achieved, and physically meaningful contributions to the diamagnetism has been identified. We also treat relativistic Dirac fermion as an interband dynamics in uniform magnetic fields. For the interacting Bloch electrons, the role of translation symmetry for calculating the magnetic susceptibility avoids any approximation to second order in the field. The expressions for magnetic susceptibility of dilute nonmagnetic alloys give a firm theoretical foundation of the empirical formulas used in fitting experimental results. The unified treatment of all the above calculations is based on the lattice Weyl-Wigner formulation of discrete phase-space quantum mechanics. For completeness, the magnetic susceptibility of Kondo alloys is also given since Dirac fermions in conduction band and magnetic impurities exhibit Kondo effect.

  15. Time-dependent Bloch-Maxwell modelling of 1 mJ, 200 fs seeded soft x-ray laser

    International Nuclear Information System (INIS)

    Zeitoun, Ph.; Oliva, E.; Fajardo, M.; Velarde, P.; Ros, D.; Sebban, S.

    2010-01-01

    Complete text of publication follows. Seeding of high harmonic generation in a soft x-ray plasma amplifier has been first proposed and tested by T. Ditmire and collaborators. The experiment demonstrated low amplification (*2), with a very strong background coming from the soft x-ray laser ASE. Later seeding experiments reached very high amplification factors (up to 600) in both gas (Ph. Zeitoun et al.) and solid amplifiers (Wang et at.). Surprisingly, solid amplifiers extracted less energy (90 nJ) than gas amplifier (∼ 1 μJ) with equivalent pump energy. We recently demonstrated that 50-100 μJ is achievable with adequate plasma tailoring. However, this energy is still low as compared to the 10 mJ per pulse demonstrated on the ASE soft x-ray laser running at PALS facility (Czech Republic). In order to model the seeding process of PALS soft x-ray laser, we developed a time-dependent Bloch-Maxwell model that solves coherently the pumping, amplification and saturation processes. We demonstrated that direct seeding, with femtosecond pulse, a soft x-ray plasma amplifier having gain duration of several 100s of picosecond cannot extract the stored energy keeping the output beam energy in the 100 μJ range. We proposed and fully modelled a new seeding scheme that allows to achieve 10 mJ, 200 fs soft x-ray laser.

  16. Bloch Surface Waves Biosensors for High Sensitivity Detection of Soluble ERBB2 in a Complex Biological Environment.

    Science.gov (United States)

    Sinibaldi, Alberto; Sampaoli, Camilla; Danz, Norbert; Munzert, Peter; Sonntag, Frank; Centola, Fabio; Occhicone, Agostino; Tremante, Elisa; Giacomini, Patrizio; Michelotti, Francesco

    2017-08-17

    We report on the use of one-dimensional photonic crystals to detect clinically relevant concentrations of the cancer biomarker ERBB2 in cell lysates. Overexpression of the ERBB2 protein is associated with aggressive breast cancer subtypes. To detect soluble ERBB2, we developed an optical set-up which operates in both label-free and fluorescence modes. The detection approach makes use of a sandwich assay, in which the one-dimensional photonic crystals sustaining Bloch surface waves are modified with monoclonal antibodies, in order to guarantee high specificity during the biological recognition. We present the results of exemplary protein G based label-free assays in complex biological matrices, reaching an estimated limit of detection of 0.5 ng/mL. On-chip and chip-to-chip variability of the results is addressed too, providing repeatability rates. Moreover, results on fluorescence operation demonstrate the capability to perform high sensitive cancer biomarker assays reaching a resolution of 0.6 ng/mL, without protein G assistance. The resolution obtained in both modes meets international guidelines and recommendations (15 ng/mL) for ERBB2 quantification assays, providing an alternative tool to phenotype and diagnose molecular cancer subtypes.

  17. Fish condensate as effective replacer of fish meal protein in diet for striped snakehead, Channa striata (Bloch).

    Science.gov (United States)

    Wattanakul, Wattana; Wattanakul, Uraiwan; Thongprajukaew, Karun; Muenpo, Chutchawan

    2017-02-01

    The optimal protein replacement of fish meal (FM) by fish condensate (FC) was investigated in striped snakehead, Channa striata (Bloch) (1.78 ± 0.02 g initial weight). The FM-based diet (0FC) was replaced by substituting protein from FC for 100 (100FC), 200 (200FC), 300 (300FC), 400 (400FC), 500 (500FC) or 600 (600FC) g kg -1 of the FM, and a commercial diet (CD) for carnivorous fish was included for comparison. The experiment was conducted indoors under completely randomized design (8 treatments × 3 replications × 60 fish per pond) over a 6-month trial. There were no significant differences in water quality during the experiment. The fish fed with 500FC had superior growth performance and feed utilization. This dietary treatment gave similar levels to all observed specific activities of digestive enzymes as did baseline 0FC. Survival, carcass composition, hematological parameters and liver histopathology were not negatively impacted by this protein replacement level. Economic analysis also supports the use of this by-product as a potent protein replacer in striped snakehead diet. Findings from the current study indicate that a 500 g kg -1 protein replacement of FM by FC is near optimal for striped snakehead, and similar use of it in the aquafeed of other species appears worth further studies.

  18. Morphological, histological and molecular characterization of Myxobolus kingchowensis and Thelohanellus cf. sinensis infecting gibel carp Carassius auratus gibelio (Bloch, 1782).

    Science.gov (United States)

    Zhang, Bo; Zhai, Yanhua; Gu, Zemao; Liu, Yang

    2018-06-26

    A Myxobolus species and a Thelohanellus species infecting Carassius auratus gibelio (Bloch, 1782) were redescribed by their morphological, histological and molecular characterization. In the present study, the Myxobolus species infecting the muscle was identified as Myxobolus kingchowensis Chen et Ma, 1998 by the morphological and molecular data. Histologically, mature spores of M. kingchowensis were observed in the intercellular and connective tissue of muscle, though the plasmodia were not found. In addition, scattered spores also occurred in the intercellular of haematopoietic cells, intraepithelial of the renal tubules and interior of the melano-macrophage centres. Phylogenetic analysis showed that M. kingchowensis clustered in the clade of muscle-infecting Myxobolus species, further supporting muscle as the infection site of M. kingchowensis. The present Thelohanellus species infecting the gills was identified conspecific as Thelohanellus sinensis reported in Sun (2006) (mark it as T. sinensis-Sun)based on spore morphology, biological traits (host specificity and organ specificity), and molecular data. However, compared with the original description of T. sinensis Chen et Hsieh, 1960, the present Thelohanellus species and T. sinensis-Sun both infecting the gills of gibel carp are distinguishable from the original description in the host and infection site, which made the validity of T. sinensis-Sun dubious. Due to the absence of molecular data in the original description of T. sinensis, we suggest marking the present species and T. sinensis-Sun as T. cf. sinensis to avoid the confusion until T. sinensis is obtained from the type host and type infection site.

  19. Azimuthal spin-wave excitations in magnetic nanodots over the soliton background: Vortex, Bloch, and Néel-like skyrmions

    Science.gov (United States)

    Mruczkiewicz, M.; Gruszecki, P.; Krawczyk, M.; Guslienko, K. Y.

    2018-02-01

    We study azimuthal spin-wave (SW) excitations in a circular ferromagnetic nanodot in different inhomogeneous, topologically nontrivial magnetization states, specifically, vortex, Bloch-type skyrmion, and Néel-type skyrmion states. A continuous transition between these states is realized by gradually changing the out-of-plane magnetic anisotropy and the Dzyaloshinskii-Moriya exchange interaction (DMI), and the corresponding SW spectra are calculated for each state. We observe the lifting of degeneracy of SW mode frequencies and a change in the systematics of frequency levels. The latter effect is induced by the geometric Berry phase, which occurs in SWs localized at the edge of the dot in the vortex state, and vanishes in the skyrmion states. Furthermore, channeling of edge-localized azimuthal SWs and a related large frequency splitting are observed in the skyrmion states. This is attributed to DMI-induced nonreciprocity, while the coupling of the breathing and gyrotropic modes is related to the skyrmion motion. Finally, we demonstrate efficient coupling of the dynamic magnetization to a uniform magnetic field in nanodots of noncircular symmetry in the skyrmion states.

  20. The invariant polarisation-tensor field for deuterons in storage rings and the Bloch equation for the polarisation-tensor density

    International Nuclear Information System (INIS)

    Barber, D.P.

    2015-10-01

    I extend and update earlier work, summarised in an earlier paper (D.P. Barber, M. Voigt, AIP Conference Proceedings 1149 (28)), whereby the invariant polarisation-tensor field (ITF) for deuterons in storage rings was introduced to complement the invariant spin field (ISF). Taken together, the ITF and the ISF provide a definition of the equilibrium spin density-matrix field which, in turn, offers a clean framework for describing equilibrium spin-1 ensembles in storage rings. I show how to construct the ITF by stroboscopic averaging, I give examples, I discuss adiabatic invariance and I introduce a formalism for describing the effect of noise and damping.

  1. Continuous Transition between Brillouin-Wigner and Rayleigh-Schrödinger Perturbation Theory, Generalized Bloch Equation, and Hilbert Space Multireference Coupled Cluster

    Czech Academy of Sciences Publication Activity Database

    Pittner, Jiří

    2003-01-01

    Roč. 118, č. 24 (2003), s. 10876-10889 ISSN 0021-9606 R&D Projects: GA MŠk OC D23.001; GA ČR GA203/99/D009; GA AV ČR IAA4040108 Institutional research plan: CEZ:AV0Z4040901 Keywords : continuous transition * Brillouin-Wigner * Rayleigh-Schrödinger Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.950, year: 2003

  2. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    International Nuclear Information System (INIS)

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

  3. Semiconductor detectors in nuclear and particle physics

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1992-01-01

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups: Classical semiconductor diode detectors and semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported

  4. Semiconductor detectors in nuclear and particle physics

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1995-01-01

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups; (i) classical semiconductor diode detectors and (ii) semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported. copyright 1995 American Institute of Physics

  5. Schroedinger equation from 0 (h/2π) to o(h/2πinfinity)

    International Nuclear Information System (INIS)

    Voros, A.

    1985-08-01

    The Balian and Bloch idea, that the semiclassical treatment of the Schroedinger equation can be carried out exactly to all orders, o(h/2πinfinity), has been explicitly confirmed upon the time-independent equation with a polynomial potential V(q) in one degree of freedom. The global analytic structure of certain functions, which encode the full eigenvalue distribution, has indeed been computed in great detail with the complex WKB method, yielding a structure called a resurgence algebra. In the special case V(q) = q 2 sub(M), this leads to sum rules for the eigenvalues, which have been verified numerically. Inasmuch as the leading order 0(h/2π) of the WKB expansion amounts to the stationary phase evaluation of the Feynman path integral, it is a yet unsolved challenge to reproduce our results by an exact analysis of this path integral using a generalized saddle-point treatment

  6. The child-Langmuir limit for semiconductors: a numerical validation

    International Nuclear Information System (INIS)

    Caceres, M.J.; Carrillo, J.A.; Degond, P.

    2002-01-01

    The Boltzmann-Poisson system modeling the electron flow in semiconductors is used to discuss the validity of the Child-Langmuir asymptotics. The scattering kernel is approximated by a simple relaxation time operator. The Child-Langmuir limit gives an approximation of the current-voltage characteristic curves by means of a scaling procedure in which the ballistic velocity is much larger that the thermal one. We discuss the validity of the Child-Langmuir regime by performing detailed numerical comparisons between the simulation of the Boltzmann-Poisson system and the Child-Langmuir equations in test problems. (authors)

  7. Controlled Population of Floquet-Bloch States via Coupling to Bose and Fermi Baths

    Directory of Open Access Journals (Sweden)

    Karthik I. Seetharam

    2015-12-01

    Full Text Available External driving is emerging as a promising tool for exploring new phases in quantum systems. The intrinsically nonequilibrium states that result, however, are challenging to describe and control. We study the steady states of a periodically driven one-dimensional electronic system, including the effects of radiative recombination, electron-phonon interactions, and the coupling to an external fermionic reservoir. Using a kinetic equation for the populations of the Floquet eigenstates, we show that the steady-state distribution can be controlled using the momentum and energy relaxation pathways provided by the coupling to phonon and Fermi reservoirs. In order to utilize the latter, we propose to couple the system and reservoir via an energy filter which suppresses photon-assisted tunneling. Importantly, coupling to these reservoirs yields a steady state resembling a band insulator in the Floquet basis. The system exhibits incompressible behavior, while hosting a small density of excitations. We discuss transport signatures and describe the regimes where insulating behavior is obtained. Our results give promise for realizing Floquet topological insulators.

  8. Partial Differential Equations

    CERN Document Server

    1988-01-01

    The volume contains a selection of papers presented at the 7th Symposium on differential geometry and differential equations (DD7) held at the Nankai Institute of Mathematics, Tianjin, China, in 1986. Most of the contributions are original research papers on topics including elliptic equations, hyperbolic equations, evolution equations, non-linear equations from differential geometry and mechanics, micro-local analysis.

  9. Equating error in observed-score equating

    NARCIS (Netherlands)

    van der Linden, Willem J.

    2006-01-01

    Traditionally, error in equating observed scores on two versions of a test is defined as the difference between the transformations that equate the quantiles of their distributions in the sample and population of test takers. But it is argued that if the goal of equating is to adjust the scores of

  10. Morphometric evaluation of the spermatogenesis in trahira Hoplias malabaricus (Bloch (Characiformes, Erythrinidae Avaliação morfométrica da espermatogênese da traíra Hoplias malabaricus (Bloch (Characiformes, Erythrinidae

    Directory of Open Access Journals (Sweden)

    Paula M. Bizzott

    2007-01-01

    Full Text Available The Erythrinidae trahira, Hoplias malabaricus (Bloch, 1794, is widespread throughout South America river basins. We determined Sertoli cell supporting capacity (ratio of primary spermatocytes: Sertoli cells and spermatids: Sertoli cells, meiotic index (ratio of spermatids: primary spermatocytes and the number of spermatogonial mitotic generations of this fish. The fish were captured in the Igarapava reservoir, Grande River, Alto Paraná River basin, Brazil. Testis fragments of three sexually mature trahiras were fixed in 5% buffered glutaraldehyde solution and embedded in glycol methacrylate. Serial sections of 2 and 3 µm in thickness were stained with 0.5% toluidine blue. Histological counts from cysts of primary spermatocytes and spermatids revealed, respectively, 326 ± 99 and 468 ± 73 nuclei of these cells. Sertoli cell supporting capacity was considerably higher for spermatids (113.3 ± 16:1 when compared to primary spermatocytes (71 ± 5:1. Between eight and ten spermatogonial generations were formed to give rise to primary spermatocytes. These values were within the generation range of those already found in freshwater teleosts of external fertilization. Correlation between the number of Sertoli cells and primary spermatocytes per cyst, and Sertoli cells and spermatids per cyst were statistically significant (p A traíra, Hoplias malabaricus (Bloch, 1794, da família Erythrinidae, encontra-se espalhada pelas bacias fluviais da América do Sul. Determinou-se a capacidade de suporte das células de Sertoli (espermatócitos primários: células de Sertoli e espermátides: células de Sertoli, índice meiótico (espermátides: espermatócitos primário e o número de gerações mitóticas de espermatogônias desse peixe. Os indivíduos foram capturados no reservatório de Igarapava, rio Grande, bacia do Alto Paraná, Brasil. Fragmentos dos testículos de três traíras sexualmente maduras foram fixados em glutaraldeído a 5%, e inclu

  11. Semiconductor electrolyte photovoltaic energy converter

    Science.gov (United States)

    Anderson, W. W.; Anderson, L. B.

    1975-01-01

    Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

  12. Hypersonic modes in nanophononic semiconductors.

    Science.gov (United States)

    Hepplestone, S P; Srivastava, G P

    2008-09-05

    Frequency gaps and negative group velocities of hypersonic phonon modes in periodically arranged composite semiconductors are presented. Trends and criteria for phononic gaps are discussed using a variety of atomic-level theoretical approaches. From our calculations, the possibility of achieving semiconductor-based one-dimensional phononic structures is established. We present results of the location and size of gaps, as well as negative group velocities of phonon modes in such structures. In addition to reproducing the results of recent measurements of the locations of the band gaps in the nanosized Si/Si{0.4}Ge{0.6} superlattice, we show that such a system is a true one-dimensional hypersonic phononic crystal.

  13. Dielectric function of semiconductor superlattice

    International Nuclear Information System (INIS)

    Qin Guoyi.

    1990-08-01

    We present a calculation of the dielectric function for semiconductor GaAs/Ga 1-x Al x As superlattice taking account of the extension of the electron envelope function and the difference of both the dielectric constant and width between GaAs and Ga 1-x Al x As layers. In the appropriate limits, our results exactly reduce to the well-known results of the quasi two-dimensional electron gas obtained by Lee and Spector and of the period array of two-dimensional electron layers obtained by Das Sarma and Quinn. By means of the dielectric function of the superlattice, the dispersion relation of the collective excitation and the screening property of semiconductor superlattice are discussed and compared with the results of the quasi two-dimensional system and with the results of the periodic array of the two-dimensional electron layers. (author). 4 refs, 3 figs

  14. Spectroscopic analysis of optoelectronic semiconductors

    CERN Document Server

    Jimenez, Juan

    2016-01-01

    This book deals with standard spectroscopic techniques which can be used to analyze semiconductor samples or devices, in both, bulk, micrometer and submicrometer scale. The book aims helping experimental physicists and engineers to choose the right analytical spectroscopic technique in order to get specific information about their specific demands. For this purpose, the techniques including technical details such as apparatus and probed sample region are described. More important, also the expected outcome from experiments is provided. This involves also the link to theory, that is not subject of this book, and the link to current experimental results in the literature which are presented in a review-like style. Many special spectroscopic techniques are introduced and their relationship to the standard techniques is revealed. Thus the book works also as a type of guide or reference book for people researching in optical spectroscopy of semiconductors.

  15. Efficient Spin Injection into Semiconductor

    International Nuclear Information System (INIS)

    Nahid, M.A.I.

    2010-06-01

    Spintronic research has made tremendous progress nowadays for making future devices obtain extra advantages of low power, and faster and higher scalability compared to present electronic devices. A spintronic device is based on the transport of an electron's spin instead of charge. Efficient spin injection is one of the very important requirements for future spintronic devices. However, the effective spin injection is an exceedingly difficult task. In this paper, the importance of spin injection, basics of spin current and the essential requirements of spin injection are illustrated. The experimental technique of electrical spin injection into semiconductor is also discussed based on the experimental experience. The electrical spin injection can easily be implemented for spin injection into any semiconductor. (author)

  16. Pulsed field studies of magnetotransport in semiconductor heterostructures

    International Nuclear Information System (INIS)

    Dalton, K.S.H.

    1999-01-01

    High field magnetotransport in two classes of semiconductor heterostructures has been studied: parallel transport in InAs/(Ga,In)Sb double heterojunctions and superlattices at low temperatures (300 mK-4.2 K), and vertical transport in GaAs/AlAs short-period superlattices at 150-300 K. The experiments mainly used the Oxford pulsed magnet (∼45 T, ∼15 ms pulses). The development of the data acquisition system and experimental techniques for magnetotransport are described, including corrections to the data, required because of the rapidly changing magnetic field. Previous studies of magnetotransport in InAs/GaSb double heterojunctions are reviewed: this electron-hole system shows compensated quantum Hall plateaux, with ρ xy dips accompanied by 'anomalous' peaks in σ xx . New data show a peak between ν=1 plateaux; this behaviour and the temperature dependence of the 'anomalous' σ xx peaks are explained by considering the movement of the Fermi level amongst anticrossing electron- and hole-like levels. InAs/(Ga,In)Sb superlattices with electron:hole density ratios close to 1 exhibit large oscillations in the resistivity (maxima typically ∼20-30 x higher than minima) and conductivity components. Deep minima in ρ xy alternate with low-integer plateaux. The magnetotransport in various ideal structures is considered, to explain the experimental results. The growth of a novel structure has allowed clearer observation of the behaviour of ρ xx (giant maxima) and ρ xy (zeroes or maxima) when the contributions from each well to σ xx and σ xy approach zero. Measurements of the high field magnetotransport peak positions show that the band overlap is increased by growing 'InSb' rather than 'GaAs' interfaces (∼20% increase), increasing the indium in the (Ga,In)Sb (∼30% increase per 10% In), or growing along [111] instead of [001] (∼30% increase). Magnetophonon resonance in short-period GaAs/AlAs superlattices causes strong, electric field-dependent vertical

  17. Compound semiconductor optical waveguide switch

    Science.gov (United States)

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  18. Semiconductors put spin in spintronics

    International Nuclear Information System (INIS)

    Weiss, Dieter

    2000-01-01

    Electrons and holes, which carry the current in semiconductor devices, are quantum-mechanical objects characterized by a set of quantum numbers - the band index, the wave-vector (which is closely related to the electron or hole velocity) and spin. The spin, however, is one of the strangest properties of particles. In simple terms, we can think of the spin as an internal rotation of the electron, but it has no classical counterpart. The spin is connected to a quantized magnetic moment and hence acts as a microscopic magnet. Thus the electron spin can adopt one of two directions (''up'' or ''down'') in a magnetic field. The spin plays no role in conventional electronics and the current in any semiconductor device is made up of a mixture of electrons with randomly oriented spins. However, a new range of electronic devices that transport the spin of the electrons, in addition to their charge, is being developed. But the biggest obstacle to making practical ''spin electronic'' or ''spintronic'' devices so far has been finding a way of injecting spin-polarized electrons or holes into the semiconductor and then detecting them. Recently a team of physicists from the University of Wuerzburg in Germany, and also a collaboration of researchers from Tohoku University in Japan and the University of California at Santa Barbara, have found a way round these problems using either semi-magnetic or ferromagnetic semiconductors as ''spin aligners'' (R Fiederling et al. 1999 Nature 402 787; Y Ohno et al. 1999 Nature 402 790). In this article the author presents the latest breakthrough in spintronics research. (UK)

  19. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  20. Ballistic superconductivity in semiconductor nanowires

    Science.gov (United States)

    Zhang, Hao; Gül, Önder; Conesa-Boj, Sonia; Nowak, Michał P.; Wimmer, Michael; Zuo, Kun; Mourik, Vincent; de Vries, Folkert K.; van Veen, Jasper; de Moor, Michiel W. A.; Bommer, Jouri D. S.; van Woerkom, David J.; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P.A.M.; Quintero-Pérez, Marina; Cassidy, Maja C.; Koelling, Sebastian; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P.

    2017-01-01

    Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices. PMID:28681843

  1. Radiation tolerance of amorphous semiconductors

    International Nuclear Information System (INIS)

    Nicolaides, R.V.; DeFeo, S.; Doremus, L.W.

    1976-01-01

    In an attempt to determine the threshold radiation damage in amorphous semiconductors, radiation tests were performed on amorphous semiconductor thin film materials and on threshold and memory devices. The influence of flash x-rays and neutron radiation upon the switching voltages, on- and off-state characteristics, dielectric response, optical transmission, absorption band edge and photoconductivity were measured prior to, during and following irradiation. These extensive tests showed the high radiation tolerance of amorphous semiconductor materials. Electrical and optical properties, other than photoconductivity, have a neutron radiation tolerance threshold above 10 17 nvt in the steady state and 10 14 nvt in short (50 μsec to 16 msec) pulses. Photoconductivity increases by 1 1 / 2 orders of magnitude at the level of 10 14 nvt (short pulses of 50 μsec). Super flash x-rays up to 5000 rads (Si), 20 nsec, do not initiate switching in off-state samples which are voltage biased up to 90 percent of the threshold voltage. Both memory and threshold amorphous devices are capable of switching on and off during nuclear radiation transients at least as high as 2 x 10 14 nvt in 50 μsec pulses

  2. Thienoacene-based organic semiconductors.

    Science.gov (United States)

    Takimiya, Kazuo; Shinamura, Shoji; Osaka, Itaru; Miyazaki, Eigo

    2011-10-11

    Thienoacenes consist of fused thiophene rings in a ladder-type molecular structure and have been intensively studied as potential organic semiconductors for organic field-effect transistors (OFETs) in the last decade. They are reviewed here. Despite their simple and similar molecular structures, the hitherto reported properties of thienoacene-based OFETs are rather diverse. This Review focuses on four classes of thienoacenes, which are classified in terms of their chemical structures, and elucidates the molecular electronic structure of each class. The packing structures of thienoacenes and the thus-estimated solid-state electronic structures are correlated to their carrier transport properties in OFET devices. With this perspective of the molecular structures of thienoacenes and their carrier transport properties in OFET devices, the structure-property relationships in thienoacene-based organic semiconductors are discussed. The discussion provides insight into new molecular design strategies for the development of superior organic semiconductors. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Identification of defects in semiconductors

    CERN Document Server

    Stavola, Michael; Weber, Eicke R; Stavola, Michael

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this traditi...

  4. The Electrical Characteristics of The N-Organic Semiconductor/P-Inorganic Semiconductor Diode

    International Nuclear Information System (INIS)

    Aydin, M. E.

    2008-01-01

    n-organic semiconductor (PEDOT) / p-inorganic semiconductor Si diode was formed by deep coating method. The method has been achieved by coating n-inorganic semiconductor PEDOT on top of p-inorganic semiconductor. The n-organic semiconductor PEDOT/ p-inorganic semiconductor diode demonstrated rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The barrier height , ideality factor values were obtained as of 0.88 eV and 1.95 respectively. The diode showed non-ideal I-V behavior with an ideality factor greater than unity that could be ascribed to the interfacial layer

  5. KMC Simulation of Surface Growth of Semiconductors

    International Nuclear Information System (INIS)

    Esen, M.

    2004-01-01

    In this work we have studied the growth and equilibration of semiconductor surfaces consisting of monoatomic steps separated by flat terraces using kinetic Monte Carlo method. Atomistic processes such as diffusion on terraces, attachment/detachment particles to/from step edges, attachment of particles from an upper terrace to a bounding step, diffusion of particles along step edges are considered. A rate equation for each, these processes is written and the overall transition probabilities are calculated where processes are ordered to make the distinction between slow and fast processes Iractal The interaction of steps is also included in the calculation of rate equations. The growth of such a surface is simulated when there is a particle flux to the surface. The rough of the surface and its dependence on both temperature and kinetic parameters such edge diffusion barrier are investigated. The formation of islands on terraces is prohibited and the distribution of their number and sizes are investigated as a function of temperature and appropriate kinetic parameters. In the absence of a flux to the surface, the equilibration of the surface is investigated paying particular attention to the top of the profile when the initial surface is a periodic profile where parallel monoatomic steps separated by terraces. It is observed that during equilibration of the profile, the topmost step disintegrates quickly and leads to many islands on the top of the profile due to. collision and annihilation of step edges of opposite sign. The islands then quickly disintegrate due to the line tension effect and this scenario repeats itself until the surface completely flattens

  6. Optical properties of crystalline semiconductors and dielectrics

    International Nuclear Information System (INIS)

    Forouhi, A.R.; Bloomer, I.

    1988-01-01

    A new formulation for the complex index of refraction, N(E) = n(E)-ik(E), as a function of photon energy E, for crystalline semiconductors and dielectrics is developed based on our previous derivation of N(E) for amorphous materials. The extinction coefficient k(E) is deduced from a one-electron model with finite lifetime for the excited electron state. The refractive index n(E) is then derived from the Kramers-Kronig relation as the Hilbert transform of k(E). It is shown that n(∞)>1. Excellent agreement is found between our equations for n(E) and k(E) and published measured values for crystalline Si, Ge, GaP, GaAs, GaSb, InP, InAs, InSb, SiC, cubic C, and α-SiO 2 , over a wide range of energies (∼0--20 eV). Far fewer parameters, all of which have physical significance, are required and they can be determined for a particular material from the position and strength of the peaks in the k spectrum

  7. New Icosahedral Boron Carbide Semiconductors

    Science.gov (United States)

    Echeverria Mora, Elena Maria

    Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

  8. Conductivity in transparent oxide semiconductors.

    Science.gov (United States)

    King, P D C; Veal, T D

    2011-08-24

    Despite an extensive research effort for over 60 years, an understanding of the origins of conductivity in wide band gap transparent conducting oxide (TCO) semiconductors remains elusive. While TCOs have already found widespread use in device applications requiring a transparent contact, there are currently enormous efforts to (i) increase the conductivity of existing materials, (ii) identify suitable alternatives, and (iii) attempt to gain semiconductor-engineering levels of control over their carrier density, essential for the incorporation of TCOs into a new generation of multifunctional transparent electronic devices. These efforts, however, are dependent on a microscopic identification of the defects and impurities leading to the high unintentional carrier densities present in these materials. Here, we review recent developments towards such an understanding. While oxygen vacancies are commonly assumed to be the source of the conductivity, there is increasing evidence that this is not a sufficient mechanism to explain the total measured carrier concentrations. In fact, many studies suggest that oxygen vacancies are deep, rather than shallow, donors, and their abundance in as-grown material is also debated. We discuss other potential contributions to the conductivity in TCOs, including other native defects, their complexes, and in particular hydrogen impurities. Convincing theoretical and experimental evidence is presented for the donor nature of hydrogen across a range of TCO materials, and while its stability and the role of interstitial versus substitutional species are still somewhat open questions, it is one of the leading contenders for yielding unintentional conductivity in TCOs. We also review recent work indicating that the surfaces of TCOs can support very high carrier densities, opposite to the case for conventional semiconductors. In thin-film materials/devices and, in particular, nanostructures, the surface can have a large impact on the total

  9. Optimal cloning of arbitrary mirror-symmetric distributions on the Bloch sphere: a proposal for practical photonic realization

    International Nuclear Information System (INIS)

    Bartkiewicz, Karol; Miranowicz, Adam

    2012-01-01

    We study state-dependent quantum cloning that can outperform universal cloning (UC). This is possible by using some a priori information on a given quantum state to be cloned. Specifically, we propose a generalization and optical implementation of quantum optimal mirror phase-covariant cloning, which refers to optimal cloning of sets of qubits of known modulus of the expectation value of Pauli's Z operator. Our results can be applied to cloning of an arbitrary mirror-symmetric distribution of qubits on the Bloch sphere including in special cases UC and phase-covariant cloning. We show that the cloning is optimal by adapting our former optimality proof for axisymmetric cloning (Bartkiewicz and Miranowicz 2010 Phys. Rev. A 82 042330). Moreover, we propose an optical realization of the optimal mirror phase-covariant 1→2 cloning of a qubit, for which the mean probability of successful cloning varies from 1/6 to 1/3 depending on prior information on the set of qubits to be cloned. The qubits are represented by polarization states of photons generated by the type-I spontaneous parametric down-conversion. The scheme is based on the interference of two photons on an unbalanced polarization-dependent beam splitter with different splitting ratios for vertical and horizontal polarization components and the additional application of feedforward by means of Pockels cells. The experimental feasibility of the proposed setup is carefully studied including various kinds of imperfections and losses. Moreover, we briefly describe two possible cryptographic applications of the optimal mirror phase-covariant cloning corresponding to state discrimination (or estimation) and secure quantum teleportation.

  10. Dynamics of polaritons in semiconductor microcavities near instability thresholds

    International Nuclear Information System (INIS)

    He, Peng-Bin

    2012-01-01

    A theoretical study is presented on the dynamics of polaritons in semiconductor microcavities near parametric instability thresholds. With upward or downward ramp of optical pump, different instability modes emerge in parameter space defined by damping and detuning. According to these modes, stationary short-wave, stationary periodic, oscillatory periodic, and oscillatory uniform parametric instabilities are distinguished. By multiple scale expansion, the dynamics near threshold can be described by a critical mode with a slowly varying amplitude for the last three instabilities. Furthermore, it is found that the evolutions of their amplitudes are governed by real or complex Ginzburg–Landau equations. -- Highlights: ► Phase diagrams for different instability in extended parameter space. ► Different instability modes near thresholds. ► Different envelop equations near thresholds obtained by multi-scale expansion.

  11. Spin-dependent Hall effect in degenerate semiconductors: a theoretical study

    International Nuclear Information System (INIS)

    Idrish Miah, M

    2008-01-01

    The spin-dependent Hall (SDH) effect in degenerate semiconductors is investigated theoretically. Starting from a two-component drift-diffusion equation, an expression for SDH voltage (V SDH ) is derived, and drift and diffusive contributions to V SDH are studied. For the possible enhancement of the diffusive part, degenerate and nondegenerate cases are examined. We find that due to an increase in the diffusion coefficient V SDH increases in a degenerate semiconductor, consistent with the experimental observations. The expression for V SDH is reduced in three limiting cases, namely diffusive, drift-diffusion crossover and drift, and is analysed. The results agree with those obtained in recent theoretical investigations.

  12. Emergence of resonant mode-locking via delayed feedback in quantum dot semiconductor lasers.

    Science.gov (United States)

    Tykalewicz, B; Goulding, D; Hegarty, S P; Huyet, G; Erneux, T; Kelleher, B; Viktorov, E A

    2016-02-22

    With conventional semiconductor lasers undergoing external optical feedback, a chaotic output is typically observed even for moderate levels of the feedback strength. In this paper we examine single mode quantum dot lasers under strong optical feedback conditions and show that an entirely new dynamical regime is found consisting of spontaneous mode-locking via a resonance between the relaxation oscillation frequency and the external cavity repetition rate. Experimental observations are supported by detailed numerical simulations of rate equations appropriate for this laser type. The phenomenon constitutes an entirely new mode-locking mechanism in semiconductor lasers.

  13. Multiple trapping on a comb structure as a model of electron transport in disordered nanostructured semiconductors

    International Nuclear Information System (INIS)

    Sibatov, R. T.; Morozova, E. V.

    2015-01-01

    A model of dispersive transport in disordered nanostructured semiconductors has been proposed taking into account the percolation structure of a sample and joint action of several mechanisms. Topological and energy disorders have been simultaneously taken into account within the multiple trapping model on a comb structure modeling the percolation character of trajectories. The joint action of several mechanisms has been described within random walks with a mixture of waiting time distributions. Integral transport equations with fractional derivatives have been obtained for an arbitrary density of localized states. The kinetics of the transient current has been calculated within the proposed new model in order to analyze time-of-flight experiments for nanostructured semiconductors

  14. Electronic properties of semiconductor surfaces and metal/semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Tallarida, M.

    2005-05-15

    This thesis reports investigations of the electronic properties of a semiconductor surface (silicon carbide), a reactive metal/semiconductor interface (manganese/silicon) and a non-reactive metal/semiconductor interface (aluminum-magnesium alloy/silicon). The (2 x 1) reconstruction of the 6H-SiC(0001) surface has been obtained by cleaving the sample along the (0001) direction. This reconstruction has not been observed up to now for this compound, and has been compared with those of similar elemental semiconductors of the fourth group of the periodic table. This comparison has been carried out by making use of photoemission spectroscopy, analyzing the core level shifts of both Si 2p and C 1s core levels in terms of charge transfer between atoms of both elements and in different chemical environments. From this comparison, a difference between the reconstruction on the Si-terminated and the C-terminated surface was established, due to the ionic nature of the Si-C bond. The growth of manganese films on Si(111) in the 1-5 ML thickness range has been studied by means of LEED, STM and photoemission spectroscopy. By the complementary use of these surface science techniques, two different phases have been observed for two thickness regimes (<1 ML and >1 ML), which exhibit a different electronic character. The two reconstructions, the (1 x 1)-phase and the ({radical}3 x {radical}3)R30 -phase, are due to silicide formation, as observed in core level spectroscopy. The growth proceeds via island formation in the monolayer regime, while the thicker films show flat layers interrupted by deep holes. On the basis of STM investigations, this growth mode has been attributed to strain due to lattice mismatch between the substrate and the silicide. Co-deposition of Al and Mg onto a Si(111) substrate at low temperature (100K) resulted in the formation of thin alloy films. By varying the relative content of both elements, the thin films exhibited different electronic properties

  15. Roadmap on semiconductor-cell biointerfaces

    Science.gov (United States)

    Tian, Bozhi; Xu, Shuai; Rogers, John A.; Cestellos-Blanco, Stefano; Yang, Peidong; Carvalho-de-Souza, João L.; Bezanilla, Francisco; Liu, Jia; Bao, Zhenan; Hjort, Martin; Cao, Yuhong; Melosh, Nicholas; Lanzani, Guglielmo; Benfenati, Fabio; Galli, Giulia; Gygi, Francois; Kautz, Rylan; Gorodetsky, Alon A.; Kim, Samuel S.; Lu, Timothy K.; Anikeeva, Polina; Cifra, Michal; Krivosudský, Ondrej; Havelka, Daniel; Jiang, Yuanwen

    2018-05-01

    This roadmap outlines the role semiconductor-based materials play in understanding the complex biophysical dynamics at multiple length scales, as well as the design and implementation of next-generation electronic, optoelectronic, and mechanical devices for biointerfaces. The roadmap emphasizes the advantages of semiconductor building blocks in interfacing, monitoring, and manipulating the activity of biological components, and discusses the possibility of using active semiconductor-cell interfaces for discovering new signaling processes in the biological world.

  16. Scanning electron microscopy of semiconductor materials

    International Nuclear Information System (INIS)

    Bresse, J.F.; Dupuy, M.

    1978-01-01

    The use of scanning electron microscopy in semiconductors opens up a large field of use. The operating modes lending themselves to the study of semiconductors are the induced current, cathodoluminescence and the use of the potential contrast which can also be applied very effectively to the study of the devices (planar in particular). However, a thorough knowledge of the mechanisms of the penetration of electrons, generation and recombination of generated carriers in a semiconductor is necessary in order to attain a better understanding of the operating modes peculiar to semiconductors [fr

  17. Reflection technique for thermal mapping of semiconductors

    Science.gov (United States)

    Walter, Martin J.

    1989-06-20

    Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

  18. Porous and Nanoporous Semiconductors and Emerging Applications

    Directory of Open Access Journals (Sweden)

    Helmut Föll

    2006-01-01

    Full Text Available Pores in single-crystalline semiconductors can be produced in a wide range of geometries and morphologies, including the “nanometer” regime. Porous semiconductors may have properties completely different from the bulk, and metamaterials with, for example, optical properties not encountered in natural materials are emerging. Possible applications of porous semiconductors include various novel sensors, but also more “exotic” uses as, for example, high explosives or electrodes for micro-fuel cells. The paper briefly reviews pore formation (including more applied aspects of large area etching, properties of porous semiconductors, and emerging applications.

  19. Metallurgy and purification of semiconductor materials

    International Nuclear Information System (INIS)

    Mughal, G.R.; Ali, M.M.; Ali, I.

    1996-01-01

    In this article the metallurgical aspects of semiconductor science and technology have been stressed here rather than of the physical and electronic aspect of the subject. Semiconductor technology has not merely presented the metallurgist with new challenges. The ease with which the semiconductor planes cleave make possible, the preparation and study of virgin surface. Semiconductor materials were being widely employed in the study of sub-boundaries and structures and can largely contribute to the study of certain aspects of nucleation and growth, precipitation phenomena, mechanical behaviour, in metallurgy. (A.B.)

  20. Emission and Absorption Entropy Generation in Semiconductors

    DEFF Research Database (Denmark)

    Reck, Kasper; Varpula, Aapo; Prunnila, Mika

    2013-01-01

    While emission and absorption entropy generation is well known in black bodies, it has not previously been studied in semiconductors, even though semiconductors are widely used for solar light absorption in modern solar cells [1]. We present an analysis of the entropy generation in semiconductor...... materials due to emission and absorption of electromagnetic radiation. It is shown that the emission and absorption entropy generation reduces the fundamental limit on the efficiency of any semiconductor solar cell even further than the Landsberg limit. The results are derived from purely thermodynamical...

  1. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2008-01-01

    This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

  2. Propagation of extensional waves in a piezoelectric semiconductor rod

    Directory of Open Access Journals (Sweden)

    C.L. Zhang

    2016-04-01

    Full Text Available We studied the propagation of extensional waves in a thin piezoelectric semiconductor rod of ZnO whose c-axis is along the axis of the rod. The macroscopic theory of piezoelectric semiconductors was used which consists of the coupled equations of piezoelectricity and the conservation of charge. The problem is nonlinear because the drift current is the product of the unknown electric field and the unknown carrier density. A perturbation procedure was used which resulted in two one-way coupled linear problems of piezoelectricity and the conservation of charge, respectively. The acoustic wave and the accompanying electric field were obtained from the equations of piezoelectricity. The motion of carriers was then determined from the conservation of charge using a trigonometric series. It was found that while the acoustic wave was approximated by a sinusoidal wave, the motion of carriers deviates from a sinusoidal wave qualitatively because of the contributions of higher harmonics arising from the originally nonlinear terms. The wave crests become higher and sharper while the troughs are shallower and wider. This deviation is more pronounced for acoustic waves with larger amplitudes.

  3. Electronic collective modes and instabilities on semiconductor surfaces. I

    International Nuclear Information System (INIS)

    Muramatsu, A.; Hanke, W.

    1984-01-01

    A Green's-function theory of electronic collective modes is presented which leads to a practical scheme for a microscopic determination of surface elementary excitations in conducting as well as nonconducting solids. Particular emphasis is placed on semiconductor surfaces where the jellium approximation is not valid, due to the importance of density fluctuations on a microscopic scale (reflected in the local-field effects). Starting from the Bethe-Salpeter equation for the two-particle Green's function of the surface system, an equation of motion for the electron-hole pair is obtained. Its solutions determine the energy spectra, lifetimes, and amplitudes of the surface elementary excitations, i.e., surface plasmons, excitons, polaritons, and magnons. Exchange and correlation effects are taken into account through the random-phase and time-dependent Hartree-Fock (screened electron-hole attraction) approximations. The formalism is applied to the study of electronic (charge- and spin-density) instabilities at covalent semiconductor surfaces. Quantitative calculations for an eight-layer Si(111) slab display an instability of the ideal paramagnetic surface with respect to spin-density waves with wavelength nearly corresponding to (2 x 1) and (7 x 7) superstructures

  4. Modes in light wave propagating in semiconductor laser

    Science.gov (United States)

    Manko, Margarita A.

    1994-01-01

    The study of semiconductor laser based on an analogy of the Schrodinger equation and an equation describing light wave propagation in nonhomogeneous medium is developed. The active region of semiconductor laser is considered as optical waveguide confining the electromagnetic field in the cross-section (x,y) and allowing waveguide propagation along the laser resonator (z). The mode structure is investigated taking into account the transversal and what is the important part of the suggested consideration longitudinal nonhomogeneity of the optical waveguide. It is shown that the Gaussian modes in the case correspond to spatial squeezing and correlation. Spatially squeezed two-mode structure of nonhomogeneous optical waveguide is given explicitly. Distribution of light among the laser discrete modes is presented. Properties of the spatially squeezed two-mode field are described. The analog of Franck-Condon principle for finding the maxima of the distribution function and the analog of Ramsauer effect for control of spatial distribution of laser emission are discussed.

  5. fdtd Semiconductor Microlaser Simulator v. 2.0

    Energy Technology Data Exchange (ETDEWEB)

    2009-01-29

    This software simulates the transient optical response of a system of in-plane semiconductor lasers/waveguides of almost arbitrary 2D complexity using the effective index approximation. Gain is calculated by solving a 3D transport equation from an arbitrary contact geometry and epi structure to get an input current density to the active region, followed by a diffusion equation for carriers in that layer. The gain is saturable and frequency dependent so that output powers and frequency spectrum/longitudinal modes are predicted. Solution is by the finite-difference time-domain method on a 2D triangular grid, so that propagation in any direction along the epi plan is allowed, and arbitrary laser/waveguide shapes can be modeled, including rings. Runtime considerations, however, limit the practical solution region to approximately 500 microns**2 so that the applicability of this code is primarily limited to micro-resinators. Modeling of standard-edge-emitting semiconductor lasers is better accomplished using algorithms based on bi-directional beam propagation.

  6. Dark and bright solitons for the two-dimensional complex modified Korteweg-de Vries and Maxwell-Bloch system with time-dependent coefficient

    Science.gov (United States)

    Shaikhova, G.; Ozat, N.; Yesmakhanova, K.; Bekova, G.

    2018-02-01

    In this work, we present Lax pair for two-dimensional complex modified Korteweg-de Vries and Maxwell-Bloch (cmKdV-MB) system with the time-dependent coefficient. Dark and bright soliton solutions for the cmKdV-MB system with variable coefficient are received by Darboux transformation. Moreover, the determinant representation of the one-fold and two-fold Darboux transformation for the cmKdV-MB system with time-dependent coefficient is presented.

  7. The Bloch self-consistently renormalized spin wave approximation and behaviour of some thermodynamic quantities of a Heisenberg ferromagnet in the critical region

    International Nuclear Information System (INIS)

    Jezewski, W.

    1979-01-01

    Properties of the Bloch self-consistently renormalized spin wave approximation are analyzed near the zero-field transition temperature Tsub(m). The analysis is carried out on the basis of the application of this approximation to the Heisenberg ferromagnet involving nearest neighbour interaction. Series expansions for the resulting Helmholtz free energy, magnetization, and specific heat in the reduced temperature t=(Tsub(m)-T)/Tsub(m) are derived and the critical exponents β and α' are obtained. The limiting case of infinite spin (the classical limit) is also investigated. (author)

  8. Method of manufacturing a semiconductor sensor device and semiconductor sensor device

    NARCIS (Netherlands)

    2009-01-01

    The invention relates to a method of manufacturing a semiconductor sensor device (10) for sensing a substance comprising a plurality of mutually parallel mesa-shaped semiconductor regions (1) which are formed on a surface of a semiconductor body (11) and which are connected at a first end to a first

  9. Projectile-z3 and -z4 corrections to basic Bethe-Bloch stopping power theory and mean excitation energies of Al, Si, Ni, Ge, Se, Y, Ag and Au

    International Nuclear Information System (INIS)

    Porter, L.E.; Bryan, S.R.

    1980-01-01

    Three independent sets of measurements of the stopping power of solid elemental targets for alpha particles were previously analyzed in terms of basic Bethe-Bloch theory with the low velocity projectile-z 3 correction term included. These data for Al, Si, Ni, Ge, Se, Y, Ag and Au have now been analyzed with the Bloch projectile-z 4 term and a revised projectile-z 3 term incorporated in the Bethe-Bloch formula, the projectile-z 3 revision having been effected by variation of the single free parameter of the projectile-z 3 effect formalism. The value of this parameter, fixed at 1.8 in previous studies, which counteracts inclusion of the projectile-z 4 term is 1.3 +- 0.1 for all target elements except Si. (orig.)

  10. Chemical Equation Balancing.

    Science.gov (United States)

    Blakley, G. R.

    1982-01-01

    Reviews mathematical techniques for solving systems of homogeneous linear equations and demonstrates that the algebraic method of balancing chemical equations is a matter of solving a system of homogeneous linear equations. FORTRAN programs using this matrix method to chemical equation balancing are available from the author. (JN)

  11. Ultrafast laser-semiconductor interactions

    International Nuclear Information System (INIS)

    Schile, L.A.

    1996-01-01

    Studies of the ultrafast (< 100 fs) interactions of infrared, sub-100 fs laser pulses with IR, photosensitive semiconductor materials InGaAs, InSb, and HgCdTe are reported. Both the carrier dynamics and the associated Terahertz radiation from these materials are discussed. The most recent developments of femtosecond (< 100 fs) Optical Parametric Oscillators (OPO) has extended the wavelength range from the visible to 5.2 μm. The photogenerated semiconductor free carrier dynamics are determined in the 77 to 300 degrees K temperature range using the Transmission Correlation Peak (TCP) method. The electron-phonon scattering times are typically 200 - 600 fs. Depending upon the material composition and substrate on which the IR crystalline materials are deposited, the nonlinear TCP absorption gives recombination rates as fast as 10's of picoseconds. For the HgCdTe, there exists a 400 fs electron-phonon scattering process along with a much longer 3600 fs loss process. Studies of the interactions of these ultrashort laser pulses with semiconductors produce Terahertz (Thz) radiative pulses. With undoped InSb, there is a substantial change in the spectral content of this THz radiation between 80 - 260 degrees K while the spectrum of Te-doped InSb remains nearly unchanged, an effect attributed to its mobility being dominated by impurity scattering. At 80 degrees K, the terahertz radiation from undoped InSb is dependent on wavelength, with both a higher frequency spectrum and much larger amplitudes generated at longer wavelengths. No such effect is observed at 260 degrees K. Finally, new results on the dependence of the emitted THz radiation on the InSb crystal's orientation is presented

  12. Handbook of integral equations

    CERN Document Server

    Polyanin, Andrei D

    2008-01-01

    This handbook contains over 2,500 integral equations with solutions as well as analytical and numerical methods for solving linear and nonlinear equations. It explores Volterra, Fredholm, WienerHopf, Hammerstein, Uryson, and other equations that arise in mathematics, physics, engineering, the sciences, and economics. This second edition includes new chapters on mixed multidimensional equations and methods of integral equations for ODEs and PDEs, along with over 400 new equations with exact solutions. With many examples added for illustrative purposes, it presents new material on Volterra, Fredholm, singular, hypersingular, dual, and nonlinear integral equations, integral transforms, and special functions.

  13. Ion implantation in semiconductor bodies

    International Nuclear Information System (INIS)

    Badawi, M.H.

    1984-01-01

    Ions are selectively implanted into layers of a semiconductor substrate of, for example, semi-insulating gallium arsenide via a photoresist implantation mask and a metallic layer of, for example, titanium disposed between the substrate surface and the photoresist mask. After implantation the mask and metallic layer are removed and the substrate heat treated for annealing purposes. The metallic layer acts as a buffer layer and prevents possible contamination of the substrate surface, by photoresist residues, at the annealing stage. Such contamination would adversely affect the electrical properties of the substrate surface, particularly gallium arsenide substrates. (author)

  14. Method of manufacturing semiconductor devices

    International Nuclear Information System (INIS)

    Sun, Y.S.E.

    1980-01-01

    A method of improving the electrical characteristics of semiconductor devices such as SCR's, rectifiers and triacs during their manufacture is described. The system consists of electron irradiation at an energy in excess of 250 KeV and most preferably between 1.5 and 12 MeV, producing an irradiation dose of between 5.10 12 and 5.10 15 electrons per sq. cm., and at a temperature in excess of 100 0 C preferably between 150 and 375 0 C. (U.K.)

  15. Physics with isotopically controlled semiconductors

    International Nuclear Information System (INIS)

    Haller, E.E.

    1994-08-01

    Control of the isotopic composition of semiconductors offers a wide range of new scientific opportunities. In this paper a number of recent results obtained with isotopically pure as well as deliberately mixed diamond and Ge bulk single crystals and Ge isotope superlattices will be reviewed. Isotopic composition affects several properties such as phonon energies, bandstructure and lattice constant in subtle but theoretically well understood ways. Large effects are observed for thermal conductivity, local vibrational modes of impurities and after neutron transmutation doping (NTD). Several experiments which could profit greatly from isotope control are proposed

  16. Theory of semiconductor laser cooling

    Science.gov (United States)

    Rupper, Greg

    Recently laser cooling of semiconductors has received renewed attention, with the hope that a semiconductor cooler might be able to achieve cryogenic temperatures. In order to study semiconductor laser cooling at cryogenic temperatures, it is crucial that the theory include both the effects of excitons and the electron-hole plasma. In this dissertation, I present a theoretical analysis of laser cooling of bulk GaAs based on a microscopic many-particle theory of absorption and luminescence of a partially ionized electron-hole plasma. This theory has been analyzed from a temperature 10K to 500K. It is shown that at high temperatures (above 300K), cooling can be modeled using older models with a few parameter changes. Below 200K, band filling effects dominate over Auger recombination. Below 30K excitonic effects are essential for laser cooling. In all cases, excitonic effects make cooling easier then predicted by a free carrier model. The initial cooling model is based on the assumption of a homogeneous undoped semiconductor. This model has been systematically modified to include effects that are present in real laser cooling experiments. The following modifications have been performed. (1) Propagation and polariton effects have been included. (2) The effect of p-doping has been included. (n-doping can be modeled in a similar fashion.) (3) In experiments, a passivation layer is required to minimize non-radiative recombination. The passivation results in a npn heterostructure. The effect of the npn heterostructure on cooling has been analyzed. (4) The effect of a Gaussian pump beam was analyzed and (5) Some of the parameters in the cooling model have a large uncertainty. The effect of modifying these parameters has been analyzed. Most of the extensions to the original theory have only had a modest effect on the overall results. However we find that the current passivation technique may not be sufficient to allow cooling. The passivation technique currently used appears

  17. Processing of insulators and semiconductors

    Science.gov (United States)

    Quick, Nathaniel R.; Joshi, Pooran C.; Duty, Chad Edward; Jellison, Jr., Gerald Earle; Angelini, Joseph Attilio

    2015-06-16

    A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.

  18. Bistable amphoteric centers in semiconductors

    International Nuclear Information System (INIS)

    Nikitina, A. G.; Zuev, V. V.

    2008-01-01

    It is shown that, at thermodynamic equilibrium, the release of charge carriers from the localized states of bistable amphoteric centers into quasi-free states depends on the degree of compensation. This brings about different functional dependences of the concentration of free charge carriers on temperature. It is found that, in uncompensated semiconductors, the concentration of free charge carriers follows the same dependence in the case of bistable amphoteric centers and bistable amphoteric U - centers, although the distributions of charge carriers over the charge states and configurations are different for these types of centers. The results can be used for interpreting various experimental data insufficiently explained in the context of the traditional approach

  19. Electron beam writing on semiconductors

    International Nuclear Information System (INIS)

    Bierhenke, H.; Kutzer, E.; Pascher, A.; Plitzner, H.; Rummel, P.; Siemens A.G., Muenchen; Siemens A.G., Muenchen

    1979-08-01

    Reported are the results of the 3 1/2 year research project 'Electron beam Writing on Semiconductors'. Work has been done in the field of direct wafer exposure techniques, and of mask making. Described are resist technology, setting up of a research device, exploration of alignment procedures, manufacturing of devices and their radiation influence. Furthermore, investigations and measurements of an electron beam machine bought for mask making purposes, the development of LSI-circuits with this machine, the software necessary and important developments of digital subsystems are reported. (orig.) [de

  20. Trace analysis of semiconductor materials

    CERN Document Server

    Cali, J Paul; Gordon, L

    1964-01-01

    Trace Analysis of Semiconductor Materials is a guidebook concerned with procedures of ultra-trace analysis. This book discusses six distinct techniques of trace analysis. These techniques are the most common and can be applied to various problems compared to other methods. Each of the four chapters basically includes an introduction to the principles and general statements. The theoretical basis for the technique involved is then briefly discussed. Practical applications of the techniques and the different instrumentations are explained. Then, the applications to trace analysis as pertaining