Quantum optics with semiconductor nanostructures
Jahnke, Frank
2012-01-01
A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...
Quantum features of semiconductor quantum dots
International Nuclear Information System (INIS)
Lozada-Cassou, M.; Dong Shihai; Yu Jiang
2004-01-01
The exact solutions of the two-dimensional Schrodinger equation with the position-dependent mass for the square well potential in the semiconductor quantum dots system are obtained. The eigenvalues, which are closely related to the position-dependent masses μ1 and μ2, the potential well depth V0 and the radius of the quantum dots r0, can be calculated from two boundary conditions. We generalize this quantum system to three-dimensional case. The special cases for the angular momentum quantum number l=0, 1, 2 are studied in some detail. We find that the energy levels are proportional to the parameters μ2, V0 and r0 for l=0. The relations between them for l=1, 2 become very complicated. The scattering states of this quantum system are mentioned briefly
Influence of phonons on semiconductor quantum emission
Energy Technology Data Exchange (ETDEWEB)
Feldtmann, Thomas
2009-07-06
A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semiconductor systems is presented. The theory is applied to study quantum dots and phonon-assisted luminescence in bulk semiconductors and heterostructures. (orig.)
Semiconductor quantum-dot lasers and amplifiers
DEFF Research Database (Denmark)
Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.
2002-01-01
-power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...
Nonadiabatic geometrical quantum gates in semiconductor quantum dots
International Nuclear Information System (INIS)
Solinas, Paolo; Zanghi, Nino; Zanardi, Paolo; Rossi, Fausto
2003-01-01
In this paper, we study the implementation of nonadiabatic geometrical quantum gates with in semiconductor quantum dots. Different quantum information enconding (manipulation) schemes exploiting excitonic degrees of freedom are discussed. By means of the Aharanov-Anandan geometrical phase, one can avoid the limitations of adiabatic schemes relying on adiabatic Berry phase; fast geometrical quantum gates can be, in principle, implemented
Optical Properties of Semiconductor Quantum Dots
Perinetti, U.
2011-01-01
This thesis presents different optical experiments performed on semiconductor quantum dots. These structures allow to confine a small number of electrons and holes to a tiny region of space, some nm across. The aim of this work was to study the basic properties of different types of quantum dots
Electron Spins in Semiconductor Quantum Dots
Hanson, R.
2005-01-01
This thesis describes a series of experiments aimed at understanding and controlling the behavior of the spin degree of freedom of single electrons, confined in semiconductor quantum dots. This research work is motivated by the prospects of using the electron spin as a quantum bit (qubit), the basic
Quantum transport in semiconductor nanostructures
Energy Technology Data Exchange (ETDEWEB)
Kubis, Tillmann Christoph
2009-11-15
The main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the presence of phonons and device imperfections. It is well known that the nonequilibrium Green's function method (NEGF) is a very general and all-inclusive scheme for the description of exactly this kind of transport problem. Although the NEGF formalism has been derived in the 1960's, textbooks about this formalism are still rare to find. Therefore, we introduce the NEGF formalism, its fundamental equations and approximations in the first part of this thesis. Thereby, we extract ideas of several seminal contributions on NEGF in literature and augment this by some minor derivations that are hard to find. Although the NEGF method has often been numerically implemented on transport problems, all current work in literature is based on a significant number of approximations with often unknown influence on the results and unknown validity limits. Therefore, we avoid most of the common approximations and implement in the second part of this thesis the NEGF formalism as exact as numerically feasible. For this purpose, we derive several new scattering self-energies and introduce new self-adaptive discretizations for the Green's functions and self-energies. The most important improvements of our NEGF implementation, however, affect the momentum and energy conservation during incoherent scattering, the Pauli blocking, the current conservation within and beyond the device and the reflectionless propagation through open device boundaries. Our uncommonly accurate implementation of the NEGF method allows us to analyze and assess most of the common approximations and to unveil numerical artifacts that have plagued previous approximate implementations in literature. Furthermore, we apply our numerical implementation of the NEGF method on the stationary electron transport in THz quantum cascade lasers (QCLs) and answer
Quantum transport in semiconductor nanowires
Van Dam, J.
2006-01-01
This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)
Superconducting detectors for semiconductor quantum photonics
International Nuclear Information System (INIS)
Reithmaier, Guenther M.
2015-01-01
In this thesis we present the first successful on-chip detection of quantum light, thereby demonstrating the monolithic integration of superconducting single photon detectors with individually addressable semiconductor quantum dots in a prototypical quantum photonic circuit. Therefore, we optimized both the deposition of high quality superconducting NbN thin films on GaAs substrates and the fabrication of superconducting detectors and successfully integrated these novel devices with GaAs/AlGaAs ridge waveguides loaded with self-assembled InGaAs quantum dots.
Many electron effects in semiconductor quantum dots
Indian Academy of Sciences (India)
Semiconductor quantum dots (QDs) exhibit shell structures, very similar to atoms. Termed as 'artificial atoms' by some, they are much larger (1 100 nm) than real atoms. One can study a variety of manyelectron effects in them, which are otherwise difficult to observe in a real atom. We have treated these effects within the ...
Semiconductor Quantum Dots with Photoresponsive Ligands.
Sansalone, Lorenzo; Tang, Sicheng; Zhang, Yang; Thapaliya, Ek Raj; Raymo, Françisco M; Garcia-Amorós, Jaume
2016-10-01
Photochromic or photocaged ligands can be anchored to the outer shell of semiconductor quantum dots in order to control the photophysical properties of these inorganic nanocrystals with optical stimulations. One of the two interconvertible states of the photoresponsive ligands can be designed to accept either an electron or energy from the excited quantum dots and quench their luminescence. Under these conditions, the reversible transformations of photochromic ligands or the irreversible cleavage of photocaged counterparts translates into the possibility to switch luminescence with external control. As an alternative to regulating the photophysics of a quantum dot via the photochemistry of its ligands, the photochemistry of the latter can be controlled by relying on the photophysics of the former. The transfer of excitation energy from a quantum dot to a photocaged ligand populates the excited state of the species adsorbed on the nanocrystal to induce a photochemical reaction. This mechanism, in conjunction with the large two-photon absorption cross section of quantum dots, can be exploited to release nitric oxide or to generate singlet oxygen under near-infrared irradiation. Thus, the combination of semiconductor quantum dots and photoresponsive ligands offers the opportunity to assemble nanostructured constructs with specific functions on the basis of electron or energy transfer processes. The photoswitchable luminescence and ability to photoinduce the release of reactive chemicals, associated with the resulting systems, can be particularly valuable in biomedical research and can, ultimately, lead to the realization of imaging probes for diagnostic applications as well as to therapeutic agents for the treatment of cancer.
Semiconductor quantum dot-sensitized solar cells.
Tian, Jianjun; Cao, Guozhong
2013-10-31
Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future.
Quantum theory of the optical and electronic properties of semiconductors
Haug, Hartmut
2009-01-01
This invaluable textbook presents the basic elements needed to understand and research into semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. Fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, the optical Stark effect, the semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz-Keldysh effects, are covered. The material is presented in sufficient detail for graduate students and researchers with a general background in quantum mechanics.This fifth edition includes an additional chapter on 'Quantum Optical Effects' where the theory of quantum optical effects in semiconductors is detailed. Besides deriving the 'semiconductor luminescence equations' and the expression for the stationary luminescence spectrum, the resu...
Introductory quantum mechanics for semiconductor nanotechnology
International Nuclear Information System (INIS)
Kim, Dae Mann
2010-01-01
The result of the nano education project run by the Korean Nano Technology Initiative, this has been recommended for use as official textbook by the Korean Nanotechnology Research Society. The author is highly experienced in teaching both physics and engineering in academia and industry, and naturally adopts an interdisciplinary approach here. He is short on formulations but long on applications, allowing students to understand the essential workings of quantum mechanics without spending too much time covering the wide realms of physics. He takes care to provide sufficient technical background and motivation for students to pursue further studies of advanced quantum mechanics and stresses the importance of translating quantum insights into useful and tangible innovations and inventions. As such, this is the only work to cover semiconductor nanotechnology from the perspective of introductory quantum mechanics, with applications including mainstream semiconductor technologies as well as (nano)devices, ranging from photodetectors, laser diodes, and solar cells to transistors and Schottky contacts. Problems are also provided to test the reader's understanding and supplementary material available includes working presentation files, solutions and instructors manuals. (orig.)
Theory of quantum diffusion in biased semiconductors
Bryksin, V V
2003-01-01
A general theory is developed to describe diffusion phenomena in biased semiconductors and semiconductor superlattices. It is shown that the Einstein relation is not applicable for all field strengths so that the calculation of the field-mediated diffusion coefficient represents a separate task. Two quite different diffusion contributions are identified. The first one disappears when the dipole operator commutes with the Hamiltonian. It plays an essential role in the theory of small polarons. The second contribution is obtained from a quantity that is the solution of a kinetic equation but that cannot be identified with the carrier distribution function. This is in contrast to the drift velocity, which is closely related to the distribution function. A general expression is derived for the quantum diffusion regime, which allows a clear physical interpretation within the hopping picture.
Semiconductor quantum optics with tailored photonic nanostructures
International Nuclear Information System (INIS)
Laucht, Arne
2011-01-01
This thesis describes detailed investigations of the effects of photonic nanostructures on the light emission properties of self-assembled InGaAs quantum dots. Nanoscale optical cavities and waveguides are employed to enhance the interaction between light and matter, i.e. photons and excitons, up to the point where optical non-linearities appear at the quantum (single photon) level. Such non-linearities are an essential component for the realization of hardware for photon based quantum computing since they can be used for the creation and detection of non-classical states of light and may open the way to new genres of quantum optoelectronic devices such as optical modulators and optical transistors. For single semiconductor quantum dots in photonic crystal nanocavities we investigate the coupling between excitonic transitions and the highly localized mode of the optical cavity. We explore the non-resonant coupling mechanisms which allow excitons to couple to the cavity mode, even when they are not spectrally in resonance. This effect is not observed for atomic cavity quantum electrodynamics experiments and its origin is traced to phonon-assisted scattering for small detunings (ΔE ∝5 meV). For quantum dots in high-Q cavities we observe the coherent coupling between exciton and cavity mode in the strong coupling regime of light-matter interaction, probe the influence of pure dephasing on the coherent interaction at high excitation levels and high lattice temperatures, and examine the coupling of two spatially separated quantum dots via the exchange of real and virtual photons mediated by the cavity mode. Furthermore, we study the spontaneous emission properties of quantum dots in photonic crystal waveguide structures, estimate the fraction of all photons emitted into the propagating waveguide mode, and demonstrate the on-chip generation of single photon emission into the waveguide. The results obtained during the course of this thesis contribute significantly to
Semiconductor quantum optics with tailored photonic nanostructures
Energy Technology Data Exchange (ETDEWEB)
Laucht, Arne
2011-06-15
This thesis describes detailed investigations of the effects of photonic nanostructures on the light emission properties of self-assembled InGaAs quantum dots. Nanoscale optical cavities and waveguides are employed to enhance the interaction between light and matter, i.e. photons and excitons, up to the point where optical non-linearities appear at the quantum (single photon) level. Such non-linearities are an essential component for the realization of hardware for photon based quantum computing since they can be used for the creation and detection of non-classical states of light and may open the way to new genres of quantum optoelectronic devices such as optical modulators and optical transistors. For single semiconductor quantum dots in photonic crystal nanocavities we investigate the coupling between excitonic transitions and the highly localized mode of the optical cavity. We explore the non-resonant coupling mechanisms which allow excitons to couple to the cavity mode, even when they are not spectrally in resonance. This effect is not observed for atomic cavity quantum electrodynamics experiments and its origin is traced to phonon-assisted scattering for small detunings ({delta}E<{proportional_to}5 meV) and a multi-exciton-based, Auger-like process for larger detunings ({delta}E >{proportional_to}5 meV). For quantum dots in high-Q cavities we observe the coherent coupling between exciton and cavity mode in the strong coupling regime of light-matter interaction, probe the influence of pure dephasing on the coherent interaction at high excitation levels and high lattice temperatures, and examine the coupling of two spatially separated quantum dots via the exchange of real and virtual photons mediated by the cavity mode. Furthermore, we study the spontaneous emission properties of quantum dots in photonic crystal waveguide structures, estimate the fraction of all photons emitted into the propagating waveguide mode, and demonstrate the on-chip generation of
Electron states in semiconductor quantum dots
International Nuclear Information System (INIS)
Dhayal, Suman S.; Ramaniah, Lavanya M.; Ruda, Harry E.; Nair, Selvakumar V.
2014-01-01
In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications
Universal quantum computation in a semiconductor quantum wire network
International Nuclear Information System (INIS)
Sau, Jay D.; Das Sarma, S.; Tewari, Sumanta
2010-01-01
Universal quantum computation (UQC) using Majorana fermions on a two-dimensional topological superconducting (TS) medium remains an outstanding open problem. This is because the quantum gate set that can be generated by braiding of the Majorana fermions does not include any two-qubit gate and also no single-qubit π/8 phase gate. In principle, it is possible to create these crucial extra gates using quantum interference of Majorana fermion currents. However, it is not clear if the motion of the various order parameter defects (vortices, domain walls, etc.), to which the Majorana fermions are bound in a TS medium, can be quantum coherent. We show that these obstacles can be overcome using a semiconductor quantum wire network in the vicinity of an s-wave superconductor, by constructing topologically protected two-qubit gates and any arbitrary single-qubit phase gate in a topologically unprotected manner, which can be error corrected using magic-state distillation. Thus our strategy, using a judicious combination of topologically protected and unprotected gate operations, realizes UQC on a quantum wire network with a remarkably high error threshold of 0.14 as compared to 10 -3 to 10 -4 in ordinary unprotected quantum computation.
Electron transport and coherence in semiconductor quantum dots and rings
Van der Wiel, W.G.
2002-01-01
A number of experiments on electron transport and coherence in semiconductor vertical and lateral quantum dots and semiconductor rings is described. Quantum dots are often referred to as "artificial atoms", because of their similarities with real atoms. Examples of such atom-like properties that
The electronic properties of semiconductor quantum dots
International Nuclear Information System (INIS)
Barker, J.A.
2000-10-01
This work is an investigation into the electronic behaviour of semiconductor quantum dots, particularly self-assembled quantum dot arrays. Processor-efficient models are developed to describe the electronic structure of dots, deriving analytic formulae for the strain tensor, piezoelectric distribution and diffusion- induced evolution of the confinement potential, for dots of arbitrary initial shape and composition profile. These models are then applied to experimental data. Transitions due to individual quantum dots have a narrow linewidth as a result of their discrete density of states. By contrast, quantum dot arrays exhibit inhomogeneous broadening which is generally attributed to size variations between the individual dots in the ensemble. Interpreting the results of double resonance spectroscopy, it is seen that variation in the indium composition of the nominally InAs dots is also present. This result also explains the otherwise confusing relationship between the spread in the ground-state and excited-state transition energies. Careful analysis shows that, in addition to the variations in size and composition, some other as yet unidentified broadening mechanism must also be present. The influence of rapid thermal annealing on dot electronic structure is also considered, finding that the experimentally observed blue-shift and narrowing of the photoluminescence linewidth may both be explained in terms of normal In/Ga interdiffusion. InAs/GaAs self-assembled quantum dots are commonly assumed to have a pyramidal geometry, so that we would expect the energy separation of the ground-state electron and hole levels in the dot to be largest at a positive applied field. This should also be the case for any dot of uniform composition whose shape tapers inwards from base to top, counter to the results of experimental Stark-shift spectroscopy which show a peak transition energy at a negative applied field. It is demonstrated that this inversion of the ground state
Chalcopyrite semiconductors for quantum well solar cells
Energy Technology Data Exchange (ETDEWEB)
Afshar, Maziar; Sadewasser, Sascha; Albert, Juergen; Lehmann, Sebastian; Abou-Ras, Daniel; Lux-Steiner, Martha C. [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Berlin (Germany); Marron, David Fuertes [Instituto de Energia Solar - ETSIT, Universidad Politecnica de Madrid, Ciudad Universitaria s.n., 28040 Madrid (Spain); Rockett, Angus A. [Department of Materials Science and Engineering, University of Illinois, 1304 W. Green Street, Urbana, IL 61801 (United States); Raesaenen, Esa [Nanoscience Center, Department of Physics University of Jyvaeskylae, FI-40014 Jyvaeskylae (Finland)
2011-11-15
The possibilities of using highly absorbing chalcopyrite semiconductors of the type Cu(In,Ga)Se{sub 2} in a quantum well solar cell structure are explored. Thin alternating layers of 50 nm CuInSe{sub 2} and CuGaSe{sub 2} were grown epitaxially on a GaAs(100) substrate. The optical properties of a resulting structure of three layers indicate charge carrier confinement in the low band gap CuInSe{sub 2} layer. By compositional analysis interdiffusion of In and Ga at the interfaces was found. The compositional profile was converted into a conduction-band diagram, for which the quantization of energy levels was numerically confirmed using the effective-mass approximation. The results provide a promising basis for the future development of chalcopyrite-type quantum well structures and their application, i.e. in quantum well solar cells. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Optical properties of semiconductors quantum microcavity structures
International Nuclear Information System (INIS)
Afshar, A.M.
1996-12-01
The principal phenomenon investigated in this thesis is vacuum Rabi coupling in semiconductor microcavity structures. In these structures quantum well excitons are embedded in a Fabry - Perot like cavity, defined by two semiconductor dielectric mirrors. In such a system the coupled exciton and cavity photon mode form a mixed - mode polariton, where on - resonance there are two branches, each having 50% exciton and 50% photon character. The separation between the upper and lower branches is a measure of the coupling strength where the strength is dependent on the exciton oscillator strength. This interaction is known as vacuum Rabi coupling, and clear anticrossing is seen when the exciton is tuned through the cavity. In our reflectivity experiments we demonstrate control of the coupling between the cavity mode and the exciton by varying temperature, applied electric or magnetic field. Modelling of the reflectivity spectra and the tuning was done using a Transfer Matrix Reflectivity (TMR) model or a linear dispersion model, where in both cases the excitons are treated as Lorentz oscillators. Temperature tuning is achieved because exciton energy decreases with temperature at a much faster rate than the cavity mode. We have demonstrated vacuum Rabi coupling of the cavity mode with both the heavy - hole and light - hole excitons. Electric field tuning is achieved via the quantum confined Stark effect which decreases the exciton energy with increasing field, whilst at the same time the cavity mode energy remains constant. A study of how the electric field reduction of exciton oscillator strength reduces the vacuum Rabi coupling strength is performed. We report the first observation in a semiconductor structure of motional narrowing, seen in both electric field and in temperature tuning experiments at high magnetic field. In magnetic field studies we show how magnetic field induced increase in exciton oscillator strength affects the vacuum Rabi coupling. We also show by
Specific heat in diluted magnetic semiconductor quantum ring
Babanlı, A. M.; Ibragimov, B. G.
2017-11-01
In the present paper, we have calculated the specific heat and magnetization of a quantum ring of a diluted magnetic semiconductor (DMS) material in the presence of magnetic field. We take into account the effect of Rashba spin-orbital interaction, the exchange interaction and the Zeeman term on the specific heat. We have calculated the energy spectrum of the electrons in diluted magnetic semiconductor quantum ring. Moreover we have calculated the specific heat dependency on the magnetic field and Mn concentration at finite temperature of a diluted magnetic semiconductor quantum ring.
Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications.
Wen, Lin; Qiu, Liping; Wu, Yongxiang; Hu, Xiaoxiao; Zhang, Xiaobing
2017-07-28
Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.
Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications
Directory of Open Access Journals (Sweden)
Lin Wen
2017-07-01
Full Text Available Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.
Colloidal crystal formation in a semiconductor quantum plasma
International Nuclear Information System (INIS)
Zeba, I.; Uzma, Ch.; Jamil, M.; Salimullah, M.; Shukla, P. K.
2010-01-01
The static shielding and the far-field dynamical oscillatory wake potentials in an ion-implanted piezoelectric semiconductor with colloid ions as test particles have been investigated in detail. The dielectric response function of the semiconductor is contributed by the quantum effect of electrons through the Bohm potential and lattice electron-phonon coupling effects. It is found that the quantum effect causes tighter binding of the electrons reducing the quantum Debye shielding length and the effective length of the wake potential to several angstroms. Hence, a quasiquantum lattice of colloid ions can be formed in the semiconductor in the quantum scales giving rise to drastic modifications of the ion-implanted semiconductor properties.
Electrically Induced Two-Photon Transparency in Semiconductor Quantum Wells
International Nuclear Information System (INIS)
Hayat, Alex; Nevet, Amir; Orenstein, Meir
2009-01-01
We demonstrate experimentally two-photon transparency, achieved by current injection into a semiconductor quantum-well structure which exhibits two-photon emission. The two-photon induced luminescence is progressively reduced by the injected current, reaching the point of two-photon transparency - a necessary condition for semiconductor two-photon gain and lasing. These results agree with our calculations.
Controlled Quantum Operations of a Semiconductor Three-Qubit System
Li, Hai-Ou; Cao, Gang; Yu, Guo-Dong; Xiao, Ming; Guo, Guang-Can; Jiang, Hong-Wen; Guo, Guo-Ping
2018-02-01
In a specially designed semiconductor device consisting of three capacitively coupled double quantum dots, we achieve strong and tunable coupling between a target qubit and two control qubits. We demonstrate how to completely switch on and off the target qubit's coherent rotations by presetting two control qubits' states. A Toffoli gate is, therefore, possible based on these control effects. This research paves a way for realizing full quantum-logic operations in semiconductor multiqubit systems.
Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots
Energy Technology Data Exchange (ETDEWEB)
Cundiff, Steven T. [Univ. of Colorado, Boulder, CO (United States)
2016-05-03
This final report describes the activities undertaken under grant "Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots". The goal of this program was to implement optical 2-dimensional Fourier transform spectroscopy and apply it to electronic excitations, including excitons, in semiconductors. Specifically of interest are quantum wells that exhibit disorder due to well width fluctuations and quantum dots. In both cases, 2-D spectroscopy will provide information regarding coupling among excitonic localization sites.
Exciton absorption of entangled photons in semiconductor quantum wells
Rodriguez, Ferney; Guzman, David; Salazar, Luis; Quiroga, Luis; Condensed Matter Physics Group Team
2013-03-01
The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers. Research funds from Facultad de Ciencias, Universidad de los Andes
Discrete quantum Fourier transform in coupled semiconductor double quantum dot molecules
International Nuclear Information System (INIS)
Dong Ping; Yang Ming; Cao Zhuoliang
2008-01-01
In this Letter, we present a physical scheme for implementing the discrete quantum Fourier transform in a coupled semiconductor double quantum dot system. The main controlled-R gate operation can be decomposed into many simple and feasible unitary transformations. The current scheme would be a useful step towards the realization of complex quantum algorithms in the quantum dot system
High-resolution photoluminescence studies of single semiconductor quantum dots
DEFF Research Database (Denmark)
Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis
2000-01-01
Semiconductor quantum dots, especially those formed by self-organized growth, are considered a promising material system for future optical devices [1] and the optical properties of quantum dot ensembles have been investigated in detail over the past years. Recently, considerable interest has...
Propagation and collision of soliton rings in quantum semiconductor plasmas
International Nuclear Information System (INIS)
El-Shamy, E.F.; Gohman, F.S.
2014-01-01
The intrinsic localization of electrostatic wave energies in quantum semiconductor plasmas can be described by solitary pulses. The collision properties of these pulses are investigated. In the present study, the fundamental model includes the quantum term, degenerate pressure of the plasma species, and the electron/hole exchange–correlation effects. In cylindrical geometry, using the extended Poincaré–Lighthill–Kuo (PLK) method, the Korteweg–de Vries (KdV) equations and the analytical phase shifts after the collision of two soliton rings are derived. Typical values for GaSb and GaN semiconductors are used to estimate the basic features of soliton rings. It is found that the pulses of GaSb semiconductor carry more energies than the pulses of GaN semiconductor. In addition, the degenerate pressure terms of electrons and holes have strong impact on the phase shift. The present theory may be useful to analyze the collision of localized coherent electrostatic waves in quantum semiconductor plasmas. - Highlights: • The propagation and the collision of pulses in quantum semiconductor plasmas are studied. • Numerical calculations reveal that pulses may exist only in dark soliton rings for electron–hole quantum plasmas. • Typical values for GaSb and GaN semiconductors are used to estimate the basic features of soliton rings. • It is found that the pulses of GaSb semiconductor carry more energies than the pulses of GaN semiconductor. • The degenerate pressure terms of electrons and holes have strong impact on the phase shift
Quantum confined laser devices optical gain and recombination in semiconductors
Blood, Peter
2015-01-01
The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent...
Polarization-insensitive quantum-dot coupled quantum-well semiconductor optical amplifier
International Nuclear Information System (INIS)
Huang Lirong; Yu Yi; Tian Peng; Huang Dexiu
2009-01-01
The optical gain of a quantum-dot semiconductor optical amplifier is usually seriously dependent on polarization; we propose a quantum-dot coupled tensile-strained quantum-well structure to obtain polarization insensitivity. The tensile-strained quantum well not only serves as a carrier injection layer of quantum dots but also offers gain to the transverse-magnetic mode. Based on the polarization-dependent coupled carrier rate-equation model, we study carrier competition among quantum well and quantum dots, and study the polarization dependence of the quantum-dot coupled quantum-well semiconductor optical amplifier. We also analyze polarization-dependent photon-mediated carrier distribution among quantum well and quantum dots. It is shown that polarization-insensitive gain can be realized by optimal design
Gain dynamics and saturation in semiconductor quantum dot amplifiers
DEFF Research Database (Denmark)
Berg, Tommy Winther; Mørk, Jesper; Hvam, Jørn Märcher
2004-01-01
Quantum dot (QD)-based semiconductor optical amplifiers offer unique properties compared with conventional devices based on bulk or quantum well material. Due to the bandfilling properties of QDs and the existence of a nearby reservoir of carriers in the form of a wetting layer, QD semiconductor...... optical amplifiers may be operated in regimes of high linearity, i.e. with a high saturation power, but can also show strong and fast nonlinearities by breaking the equilibrium between discrete dot states and the continuum of wetting layer states. In this paper, we analyse the interplay of these two...
Optical properties of the semiconductor quantum structure
International Nuclear Information System (INIS)
Haratizadeh, H.; Holtz, P.O.; Monemar, B.; Karlsoon, K.F.; Moskalenko, E.S.; Amano, H.; Akasaki, I.; Schoenfeld, W.V.; Garcia, J.M.; Petroff, P.M.
2004-01-01
Optical properties of the quantum structures have been discussed with emphasize of the AlGaN/GaN multiple quantum wells and InAs/GaAs quantum dot structures. We report on a detailed study of low temperature photoluminescence in Al 0 .07Ga 0 .93 N/GaN multiple quantum wells. The structures were nominally undoped multiple quantum well grown on sapphire substrate. The structure from discrete well width variations is here resolved in photoluminescence spectra. The results demonstrate that the theoretically estimated fields in this work are consistent with the experimental spectra
Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures
Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.
2016-03-01
Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.
Entanglement and Zeeman interaction in diluted magnetic semiconductor quantum dot
International Nuclear Information System (INIS)
Hichri, A.; Jaziri, S.
2004-01-01
We present theoretically the Zeeman coupling and exchange-induced swap action in spin-based quantum dot quantum computer models in the presence of magnetic field. We study the valence and conduction band states in a double quantum dots made in diluted magnetic semiconductor. The latter have been proven to be very useful in building an all-semiconductor platform for spintronics. Due to a strong p-d exchange interaction in diluted magnetic semiconductor (Cd 0.57 Mn 0.43 Te), the relative contribution of this component is strongly affected by an external magnetic field, a feature that is absent in nonmagnetic double quantum dots. We determine the energy spectrum as a function of magnetic field within the Hund-Mulliken molecular-orbit approach and by including the Coulomb interaction. Since we show that the ground state of the two carriers confined in a vertically coupled quantum dots provide a possible realization for a gate of a quantum computer, the crossing between the lowest states, caused by the giant spin splitting, can be observed as a pronounced jump in the magnetization of small magnetic field amplitude. Finally, we determine the swap time as a function of magnetic field and the inter dot distance. We estimate quantitatively swap errors caused by the field, establishing that error correction would, in principle, be possible in the presence of nonuniform magnetic field in realistic structures
Spin Splitting in Different Semiconductor Quantum Wells
International Nuclear Information System (INIS)
Hao Yafei
2012-01-01
We theoretically investigate the spin splitting in four undoped asymmetric quantum wells in the absence of external electric field and magnetic field. The quantum well geometry dependence of spin splitting is studied with the Rashba and the Dresselhaus spin-orbit coupling included. The results show that the structure of quantum well plays an important role in spin splitting. The Rashba and the Dresselhaus spin splitting in four asymmetric quantum wells are quite different. The origin of the distinction is discussed in this work. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Order-disorder transition in nanoscopic semiconductor quantum rings
Borrmann, P.; Harting, J.D.R.
2001-01-01
Using the path integral Monte Carlo technique we show that semiconductor quantum rings with up to six electrons exhibit a temperature, ring diameter, and particle number dependent transition between spin ordered and disordered Wigner crystals. Because of the small number of particles the transition
Semiconductor-Metal transition in a quantum well
International Nuclear Information System (INIS)
Nithiananthi, P.; Jayakumar, K.
2007-01-01
We demonstrate semiconductor-metal transition through diamagnetic susceptibility of a donor in a GaAs/Al x Ga 1- x As quantum well for both infinite and finite barrier models. We have also considered the non-parabolicity of the conduction band in our calculation. Our results agree with the earlier theoretical result and also with the recent experimental result
Ultrafast Dynamics of Quantum-Dot Semiconductor Optical Amplifiers
DEFF Research Database (Denmark)
Poel, Mike van der; Hvam, Jørn Märcher
2007-01-01
We report on a series of experiments on the dynamical properties of quantum-dot semiconductor optical amplifiers. We show how the amplifier responds to one or several ultrafast (170 fs) pulses in rapid succession and our results demonstrate applicability and ultimate limitations to application...
Field-effect magnetization reversal in ferromagnetic semiconductor quantum wellls
Czech Academy of Sciences Publication Activity Database
Lee, B.; Jungwirth, Tomáš; MacDonald, A. H.
2002-01-01
Roč. 65, č. 19 (2002), s. 193311-1-193311-4 ISSN 0163-1829 R&D Projects: GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductor quantum wells * magnetization reversal process Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.327, year: 2002
Quantum Dot Semiconductor Optical Amplifiers - Physics and Applications
DEFF Research Database (Denmark)
Berg, Tommy Winther
2004-01-01
This thesis describes the physics and applications of quantum dot semiconductor optical amplifiers based on numerical simulations. These devices possess a number of unique properties compared with other types of semiconductor amplifiers, which should allow enhanced performance of semiconductor...... respects is comparable to those of fiber amplifiers. The possibility of inverting the optically active states to a large degree is essential in order to achieve this performance. Optical signal processing through cross gain modulation and four wave mixing is modeled and described. For both approaches...... and QW devices and to experiments on quantum dot amplifiers. These comparisons outline the qualitative differences between the different types of amplifiers. In all cases focus is put on the physical processes responsible the differences....
Thermodynamic concepts in semiconductor quantum dot technology
International Nuclear Information System (INIS)
Shchukin, V.
2001-01-01
Major trends of the modern civilization are related to the changing of the industrial society into an information and knowledge-based society. This transformation is to a large extent based on the modern information and communication technology. The nobel prize-2000 in physics is a remarkable recognition of an extremely high significance of this kind of technology. The nobel prize has been awarded with one half jointly to Zhores I. Alferov and Herbert Kroemer for developing semiconductor heterostructures used in high-speed- and opto-electronics and one half to Jack St. Clair Kilby for this part in the invention of the integrated circuit. The development of the semiconductor heterostructures technology requires a profound understanding of the basic growth mechanisms involved in any technological process, including any type of epitaxy, either the liquid phase epitaxy (LPE), or the metalorganic vapor phase epitaxy (MOVPE), or the molecular beam epitaxy (MBE). Starting from this pioneering works on semiconductor heterostructures till present time, Professor Zh. Alferov has always paid much attention to complex and comprehensive study of the subject. This covers the growth - as well as the post-growth technology including the theoretical modeling of the technology, the characterization of the heterostructures, and the device design. Such complex approach has master mined the scientific and technological success of Abraham loffe Institute in the area of semiconductor heterostructures, and later, nano structures. (Orig../A.B.)
Quantum-correlated two-photon transitions to excitons in semiconductor quantum wells.
Salazar, L J; Guzmán, D A; Rodríguez, F J; Quiroga, L
2012-02-13
The dependence of the excitonic two-photon absorption on the quantum correlations (entanglement) of exciting biphotons by a semiconductor quantum well is studied. We show that entangled photon absorption can display very unusual features depending on space-time-polarization biphoton parameters and absorber density of states for both bound exciton states as well as for unbound electron-hole pairs. We report on the connection between biphoton entanglement, as quantified by the Schmidt number, and absorption by a semiconductor quantum well. Comparison between frequency-anti-correlated, unentangled and frequency-correlated biphoton absorption is addressed. We found that exciton oscillator strengths are highly increased when photons arrive almost simultaneously in an entangled state. Two-photon-absorption becomes a highly sensitive probe of photon quantum correlations when narrow semiconductor quantum wells are used as two-photon absorbers.
Quantum computation in semiconductor quantum dots of electron-spin asymmetric anisotropic exchange
International Nuclear Information System (INIS)
Hao Xiang; Zhu Shiqun
2007-01-01
The universal quantum computation is obtained when there exists asymmetric anisotropic exchange between electron spins in coupled semiconductor quantum dots. The asymmetric Heisenberg model can be transformed into the isotropic model through the control of two local unitary rotations for the realization of essential quantum gates. The rotations on each qubit are symmetrical and depend on the strength and orientation of asymmetric exchange. The implementation of the axially symmetric local magnetic fields can assist the construction of quantum logic gates in anisotropic coupled quantum dots. This proposal can efficiently use each physical electron spin as a logical qubit in the universal quantum computation
Tunnelling and relaxation in semiconductor double quantum wells
International Nuclear Information System (INIS)
Ferreira, R.; Bastard, G.
1997-01-01
Double quantum wells are among the simplest semiconductor heterostructures exhibiting tunnel coupling. The existence of a quantum confinement effect for the energy levels of a narrow single quantum well has been largely studied. In double quantum wells, in addition to these confinement effects which characterize the levels of the isolated wells, one faces the problem of describing the eigenstates of systems interacting weakly through a potential barrier. In addition, the actual structures differ from the ideal systems studied in the quantum mechanics textbooks in many aspects. The presence of defects leads, for instance, to an irreversible time evolution for a population of photocreated carriers. This irreversible transfer is now clearly established experimentally. The resonant behaviour of the transfer has also been evidenced, from the study of biased structures. If the existence of an interwell transfer is now clearly established from the experimental point of view, its theoretical description, however, is not fully satisfactory. This review focuses on the theoretical description of the energy levels and of the interwell assisted transfer in double quantum wells. We shall firstly outline the problem of tunnel coupling in semiconductor heterostructures and then discuss the single particle and exciton eigenstates in double quantum wells. In the remaining part of the review we shall present and critically review a few theoretical models used to describe the assisted interwell transfer in these structures. (author)
Physical models of semiconductor quantum devices
Fu, Ying
2013-01-01
The science and technology relating to nanostructures continues to receive significant attention for its applications to various fields including microelectronics, nanophotonics, and biotechnology. This book describes the basic quantum mechanical principles underlining this fast developing field. From the fundamental principles of quantum mechanics to nanomaterial properties, from device physics to research and development of new systems, this title is aimed at undergraduates, graduates, postgraduates, and researchers.
Full quantum treatment of charge dynamics in amorphous molecular semiconductors
de Vries, Xander; Friederich, Pascal; Wenzel, Wolfgang; Coehoorn, Reinder; Bobbert, Peter A.
2018-02-01
We present a treatment of charge dynamics in amorphous molecular semiconductors that accounts for the coupling of charges to all intramolecular phonon modes in a fully quantum mechanical way. Based on ab initio calculations, we derive charge transfer rates that improve on the widely used semiclassical Marcus rate and obtain benchmark results for the mobility and energetic relaxation of electrons and holes in three semiconductors commonly applied in organic light-emitting diodes. Surprisingly, we find very similar results when using the simple Miller-Abrahams rate. We conclude that extracting the disorder strength from temperature-dependent charge transport studies is very possible but extracting the reorganization energy is not.
Quantum theory of the optical and electronic properties of semiconductors
Haug, Hartmut
1990-01-01
The current technological revolution in the development of computing devices has created a demand for a textbook on the quantum theory of the electronic and optical properties of semiconductors and semiconductor devices. This book successfully fulfills this need. Based on lectures given by the authors, it is a comprehensive introduction for researchers or graduate-level students to the subject. Certain sections can also serve as a graduate-level textbook for use in solid state physics courses or for more specialized courses. The final chapters establish a direct link to current research in sem
Quantum spin transport in semiconductor nanostructures
Energy Technology Data Exchange (ETDEWEB)
Schindler, Christoph
2012-05-15
In this work, we study and quantitatively predict the quantum spin Hall effect, the spin-orbit interaction induced intrinsic spin-Hall effect, spin-orbit induced magnetizations, and spin-polarized electric currents in nanostructured two-dimensional electron or hole gases with and without the presence of magnetic fields. We propose concrete device geometries for the generation, detection, and manipulation of spin polarization and spin-polarized currents. To this end a novel multi-band quantum transport theory, that we termed the multi-scattering Buettiker probe model, is developed. The method treats quantum interference and coherence in open quantum devices on the same footing as incoherent scattering and incorporates inhomogeneous magnetic fields in a gauge-invariant and nonperturbative manner. The spin-orbit interaction parameters that control effects such as band energy spin splittings, g-factors, and spin relaxations are calculated microscopically in terms of an atomistic relativistic tight-binding model. We calculate the transverse electron focusing in external magnetic and electric fields. We have performed detailed studies of the intrinsic spin-Hall effect and its inverse effect in various material systems and geometries. We find a geometry dependent threshold value for the spin-orbit interaction for the inverse intrinsic spin-Hall effect that cannot be met by n-type GaAs structures. We propose geometries that spin polarize electric current in zero magnetic field and analyze the out-of-plane spin polarization by all electrical means. We predict unexpectedly large spin-orbit induced spin-polarization effects in zero magnetic fields that are caused by resonant enhancements of the spin-orbit interaction in specially band engineered and geometrically designed p-type nanostructures. We propose a concrete realization of a spin transistor in HgTe quantum wells, that employs the helical edge channel in the quantum spin Hall effect.
Quantum spin transport in semiconductor nanostructures
International Nuclear Information System (INIS)
Schindler, Christoph
2012-01-01
In this work, we study and quantitatively predict the quantum spin Hall effect, the spin-orbit interaction induced intrinsic spin-Hall effect, spin-orbit induced magnetizations, and spin-polarized electric currents in nanostructured two-dimensional electron or hole gases with and without the presence of magnetic fields. We propose concrete device geometries for the generation, detection, and manipulation of spin polarization and spin-polarized currents. To this end a novel multi-band quantum transport theory, that we termed the multi-scattering Buettiker probe model, is developed. The method treats quantum interference and coherence in open quantum devices on the same footing as incoherent scattering and incorporates inhomogeneous magnetic fields in a gauge-invariant and nonperturbative manner. The spin-orbit interaction parameters that control effects such as band energy spin splittings, g-factors, and spin relaxations are calculated microscopically in terms of an atomistic relativistic tight-binding model. We calculate the transverse electron focusing in external magnetic and electric fields. We have performed detailed studies of the intrinsic spin-Hall effect and its inverse effect in various material systems and geometries. We find a geometry dependent threshold value for the spin-orbit interaction for the inverse intrinsic spin-Hall effect that cannot be met by n-type GaAs structures. We propose geometries that spin polarize electric current in zero magnetic field and analyze the out-of-plane spin polarization by all electrical means. We predict unexpectedly large spin-orbit induced spin-polarization effects in zero magnetic fields that are caused by resonant enhancements of the spin-orbit interaction in specially band engineered and geometrically designed p-type nanostructures. We propose a concrete realization of a spin transistor in HgTe quantum wells, that employs the helical edge channel in the quantum spin Hall effect.
Single photon sources with single semiconductor quantum dots
Shan, Guang-Cun; Yin, Zhang-Qi; Shek, Chan Hung; Huang, Wei
2014-04-01
In this contribution, we briefly recall the basic concepts of quantum optics and properties of semiconductor quantum dot (QD) which are necessary to the understanding of the physics of single-photon generation with single QDs. Firstly, we address the theory of quantum emitter-cavity system, the fluorescence and optical properties of semiconductor QDs, and the photon statistics as well as optical properties of the QDs. We then review the localization of single semiconductor QDs in quantum confined optical microcavity systems to achieve their overall optical properties and performances in terms of strong coupling regime, efficiency, directionality, and polarization control. Furthermore, we will discuss the recent progress on the fabrication of single photon sources, and various approaches for embedding single QDs into microcavities or photonic crystal nanocavities and show how to extend the wavelength range. We focus in particular on new generations of electrically driven QD single photon source leading to high repetition rates, strong coupling regime, and high collection efficiencies at elevated temperature operation. Besides, new developments of room temperature single photon emission in the strong coupling regime are reviewed. The generation of indistinguishable photons and remaining challenges for practical single-photon sources are also discussed.
Quantum computing based on semiconductor nanowires
Frolov, S.M.; Plissard, S.R.; Nadj-Perge, S.; Kouwenhoven, L.P.; Bakkers, E.P.A.M.
2013-01-01
A quantum computer will have computational power beyond that of conventional computers, which can be exploited for solving important and complex problems, such as predicting the conformations of large biological molecules. Materials play a major role in this emerging technology, as they can enable
Development and Application of Semiconductor Quantum Dots to Quantum Computing
National Research Council Canada - National Science Library
Steel, Duncan
2002-01-01
.... Several major milestones were achieved during the present program including the demonstration of optically induced and detected quantum entanglement of two qubits, Rabi oscillation (one bit rotation...
Dynamics of spins in semiconductor quantum wells under drift
International Nuclear Information System (INIS)
Idrish Miah, M.
2009-01-01
The dynamics of spins in semiconductor quantum wells under applied electric bias has been investigated by photoluminescence (PL) spectroscopy. The bias-dependent polarization of PL (P PL ) was measured at different temperatures. The P PL was found to decay with an enhancement of increasing the strength of the negative bias, with an exception occurred for a low value of the negative bias. The P PL was also found to depend on the temperature. The P PL in the presence of a transverse magnetic field was also studied. The results showed that P PL in the magnetic field oscillates under an applied bias, demonstrating that the dephasing of electron spin occurs during the drift transport in semiconductor quantum wells.
Dynamics of spins in semiconductor quantum wells under drift
Energy Technology Data Exchange (ETDEWEB)
Idrish Miah, M., E-mail: m.miah@griffith.edu.a [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)
2009-09-15
The dynamics of spins in semiconductor quantum wells under applied electric bias has been investigated by photoluminescence (PL) spectroscopy. The bias-dependent polarization of PL (P{sub PL}) was measured at different temperatures. The P{sub PL} was found to decay with an enhancement of increasing the strength of the negative bias, with an exception occurred for a low value of the negative bias. The P{sub PL} was also found to depend on the temperature. The P{sub PL} in the presence of a transverse magnetic field was also studied. The results showed that P{sub PL} in the magnetic field oscillates under an applied bias, demonstrating that the dephasing of electron spin occurs during the drift transport in semiconductor quantum wells.
Electron Liquids in Semiconductor Quantum Structures
International Nuclear Information System (INIS)
Pinczuk, Aron
2009-01-01
The groups led by Stormer and Pinczuk have focused this project on goals that seek the elucidation of novel many-particle effects that emerge in two-dimensional electron systems (2DES) as the result from fundamental quantum interactions. This experimental research is conducted under extreme conditions of temperature and magnetic field. From the materials point of view, the ultra-high mobility systems in GaAs/AlGaAs quantum structures continue to be at the forefront of this research. The newcomer materials are based on graphene, a single atomic layer of graphite. The graphene research is attracting enormous attention from many communities involved in condensed matter research. The investigated many-particle phenomena include the integer and fractional quantum Hall effect, composite fermions, and Dirac fermions, and a diverse group of electron solid and liquid crystal phases. The Stormer group performed magneto-transport experiments and far-infrared spectroscopy, while the Pinczuk group explores manifestations of such phases in optical spectra.
Single electron-spin memory with a semiconductor quantum dot
International Nuclear Information System (INIS)
Young, Robert J; Dewhurst, Samuel J; Stevenson, R Mark; Atkinson, Paola; Bennett, Anthony J; Ward, Martin B; Cooper, Ken; Ritchie, David A; Shields, Andrew J
2007-01-01
We show storage of the circular polarization of an optical field, transferring it to the spin-state of an individual electron confined in a single semiconductor quantum dot. The state is subsequently read out through the electronically-triggered emission of a single photon. The emitted photon shares the same polarization as the initial pulse but has a different energy, making the transfer of quantum information between different physical systems possible. With an applied magnetic field of 2 T, spin memory is preserved for at least 1000 times more than the exciton's radiative lifetime
Optical generation and control of quantum coherence in semiconductor nanostructures
Slavcheva, Gabriela
2010-01-01
The unprecedented control of coherence that can be exercised in quantum optics of atoms and molecules has stimulated increasing efforts in extending it to solid-state systems. One motivation to exploit the coherent phenomena comes from the emergence of the quantum information paradigm, however many more potential device applications ranging from novel lasers to spintronics are all bound up with issues in coherence. The book focuses on recent advances in the optical control of coherence in excitonic and polaritonic systems as model systems for the complex semiconductor dynamics towards the goal
Semiconductor Quantum Dash Broadband Emitters: Modeling and Experiments
Khan, Mohammed Zahed Mustafa
2013-10-01
Broadband light emitters operation, which covers multiple wavelengths of the electromagnetic spectrum, has been established as an indispensable element to the human kind, continuously advancing the living standard by serving as sources in important multi-disciplinary field applications such as biomedical imaging and sensing, general lighting and internet and mobile phone connectivity. In general, most commercial broadband light sources relies on complex systems for broadband light generation which are bulky, and energy hungry. \\tRecent demonstration of ultra-broadband emission from semiconductor light sources in the form of superluminescent light emitting diodes (SLDs) has paved way in realization of broadband emitters on a completely novel platform, which offered compactness, cost effectiveness, and comparatively energy efficient, and are already serving as a key component in medical imaging systems. The low power-bandwidth product is inherent in SLDs operating in the amplified spontaneous emission regime. A quantum leap in the advancement of broadband emitters, in which high power and large bandwidth (in tens of nm) are in demand. Recently, the birth of a new class of broadband semiconductor laser diode (LDs) producing multiple wavelength light in stimulated emission regime was demonstrated. This very recent manifestation of a high power-bandwidth-product semiconductor broadband LDs relies on interband optical transitions via quantum confined dot/dash nanostructures and exploiting the natural inhomogeneity of the self-assembled growth technology. This concept is highly interesting and extending the broad spectrum of stimulated emission by novel device design forms the central focus of this dissertation. \\tIn this work, a simple rate equation numerical technique for modeling InAs/InP quantum dash laser incorporating the properties of inhomogeneous broadening effect on lasing spectra was developed and discussed, followed by a comprehensive experimental analysis
Computational models for the berry phase in semiconductor quantum dots
Energy Technology Data Exchange (ETDEWEB)
Prabhakar, S., E-mail: rmelnik@wlu.ca; Melnik, R. V. N., E-mail: rmelnik@wlu.ca [M2NeT Lab, Wilfrid Laurier University, 75 University Ave W, Waterloo, ON N2L 3C5 (Canada); Sebetci, A. [Department of Mechanical Engineering, Mevlana University, 42003, Konya (Turkey)
2014-10-06
By developing a new model and its finite element implementation, we analyze the Berry phase low-dimensional semiconductor nanostructures, focusing on quantum dots (QDs). In particular, we solve the Schrödinger equation and investigate the evolution of the spin dynamics during the adiabatic transport of the QDs in the 2D plane along circular trajectory. Based on this study, we reveal that the Berry phase is highly sensitive to the Rashba and Dresselhaus spin-orbit lengths.
Carrier-phonon interaction in semiconductor quantum dots
Energy Technology Data Exchange (ETDEWEB)
Seebeck, Jan
2009-03-10
In recent years semiconductor quantum dots have been studied extensively due to their wide range of possible applications, predominantly for light sources. For successful applications, efficient carrier scattering processes as well as a detailed understanding of the optical properties are of central importance. The aims of this thesis are theoretical investigations of carrier scattering processes in InGaAs/GaAs quantum dots on a quantum-kinetic basis. A consistent treatment of quasi-particle renormalizations and carrier kinetics for non-equilibrium conditions is presented, using the framework of non-equilibrium Green's functions. The focus of our investigations is the interaction of carriers with LO phonons. Important for the understanding of the scattering mechanism are the corresponding quasi-particle properties. Starting from a detailed study of quantum-dot polarons, scattering and dephasing processes are discussed for different temperature regimes. The inclusion of polaron and memory effects turns out to be essential for the description of the carrier kinetics in quantum-dot systems. They give rise to efficient scattering channels and the obtained results are in agreement with recent experiments. Furthermore, a consistent treatment of the carrier-LO-phonon and the carrier-carrier interaction is presented for the optical response of semiconductor quantum dots, both giving rise to equally important contributions to the dephasing. Beside the conventional GaAs material system, currently GaN based light sources are of high topical interest due to their wide range of possible emission frequencies. In this material additionally intrinsic properties like piezoelectric fields and strong band-mixing effects have to be considered. For the description of the optical properties of InN/GaN quantum dots a procedure is presented, where the material properties obtained from an atomistic tight-binding approach are combined with a many-body theory for non
Fiore, A.; Rossetti, M.; Alloing, B.; Paranthoën, C.; Chen, J.X.; Geelhaar, L.; Riechert, H.
2004-01-01
We present a comparative study of carrier diffusion in semiconductor heterostructures with different dimensionality [InGaAs quantum wells (QWs), InAs quantum dots (QDs), and disordered InGaNAs QWs (DQWs)]. In order to evaluate the diffusion length in the active region of device structures, we
Electronic structure of semiconductor quantum films
International Nuclear Information System (INIS)
Zhang, S.B.; Yeh, C.; Zunger, A.
1993-01-01
The electronic structure of thin (≤30 A) free-standing ideal films of Si(001), Si(110), and GaAs(110) is calculated using a plane-wave pseudopotential description. Unlike the expectation based on the simple effective-mass model, we find the following. (i) The band gaps of (001) quantum films exhibit even-odd oscillation as a function of the number N of monolayers. (ii) In addition to sine-type envelope functions which vanish at the film boundaries, some states have cosine envelope functions with extrema at boundaries. (iii) Even-layer Si(001) films exhibit at the valence-band maximum a state whose energy does not vary with the film thickness. Such zero confinement states have constant envelope throughout the film. (iv) Optical transitions in films exhibit boundary-imposed selection rules. Furthermore, oscillator strengths for pseudodirect transitions in the vicinity of forbidden direct transitions can be enhanced by several orders of magnitude. These findings, obtained in direct supercell calculations, can be explained in terms of a truncated crystal (TC) analysis. In this approach the film's wave functions are expanded in terms of pairs of bulk wave functions exhibiting a destructive interference at the boundaries. This maps the eigenvalue spectra of a film onto the bulk band structure evaluated at special k points which satisfy the boundary conditions. We find that the TC representation reproduces accurately the above-mentioned results of direct diagonalization of the film's Hamiltonian. This provides a simple alternative to the effective-mass model and relates the properties of quantum structures to those of the bulk material
Semiconductor-inspired design principles for superconducting quantum computing.
Shim, Yun-Pil; Tahan, Charles
2016-03-17
Superconducting circuits offer tremendous design flexibility in the quantum regime culminating most recently in the demonstration of few qubit systems supposedly approaching the threshold for fault-tolerant quantum information processing. Competition in the solid-state comes from semiconductor qubits, where nature has bestowed some very useful properties which can be utilized for spin qubit-based quantum computing. Here we begin to explore how selective design principles deduced from spin-based systems could be used to advance superconducting qubit science. We take an initial step along this path proposing an encoded qubit approach realizable with state-of-the-art tunable Josephson junction qubits. Our results show that this design philosophy holds promise, enables microwave-free control, and offers a pathway to future qubit designs with new capabilities such as with higher fidelity or, perhaps, operation at higher temperature. The approach is also especially suited to qubits on the basis of variable super-semi junctions.
Optical Nonlinearities and Ultrafast Carrier Dynamics in Semiconductor Quantum Dots
Energy Technology Data Exchange (ETDEWEB)
Klimov, V.; McBranch, D.; Schwarz, C.
1998-08-10
Low-dimensional semiconductors have attracted great interest due to the potential for tailoring their linear and nonlinear optical properties over a wide-range. Semiconductor nanocrystals (NC's) represent a class of quasi-zero-dimensional objects or quantum dots. Due to quantum cordhement and a large surface-to-volume ratio, the linear and nonlinear optical properties, and the carrier dynamics in NC's are significantly different horn those in bulk materials. napping at surface states can lead to a fast depopulation of quantized states, accompanied by charge separation and generation of local fields which significantly modifies the nonlinear optical response in NC's. 3D carrier confinement also has a drastic effect on the energy relaxation dynamics. In strongly confined NC's, the energy-level spacing can greatly exceed typical phonon energies. This has been expected to significantly inhibit phonon-related mechanisms for energy losses, an effect referred to as a phonon bottleneck. It has been suggested recently that the phonon bottleneck in 3D-confined systems can be removed due to enhanced role of Auger-type interactions. In this paper we report femtosecond (fs) studies of ultrafast optical nonlinearities, and energy relaxation and trap ping dynamics in three types of quantum-dot systems: semiconductor NC/glass composites made by high temperature precipitation, ion-implanted NC's, and colloidal NC'S. Comparison of ultrafast data for different samples allows us to separate effects being intrinsic to quantum dots from those related to lattice imperfections and interface properties.
Spin transitions in semiconductor quantum rings
International Nuclear Information System (INIS)
Baxevanis, Benjamin; Pfannkuche, Daniela
2010-01-01
We adopt the path integral Monte Carlo method to accurately resolve the total spin of the ground state of electrons confined in a quantum ring with different geometries. Using this method, an evaluation of the ground state of three electrons in a ring shows a spin transition to the fully polarized state by increasing the radius and thereby enhancing the Coulomb interaction. The total spin of the ground state is determined by the mutual interplay of confinement and electron-electron interaction. An analysis of the four-electron ring demonstrates that in this case no spin transitions take place. Furthermore, the effect of geometric distortion of the ring on its ground state has been investigated. Elliptically deforming the ring breaks the symmetry of the system and leads to the removal of orbital degeneracy. For strong distortion the splitting between hybridized states is sufficient to overcome the exchange-energy saving associated with a higher spin state. We have found that this effect removes the polarization of three electrons. Even in a four-electron ring the ground state is forced by the distortion to be unpolarized and thus suppressing the Hund's rule ground state.
Exciton coherence in semiconductor quantum dots
International Nuclear Information System (INIS)
Ishi-Hayase, Junko; Akahane, Kouichi; Yamamoto, Naokatsu; Sasaki, Masahide; Kujiraoka, Mamiko; Ema, Kazuhiro
2009-01-01
The coherent dynamics of excitons in InAs quantum dots (QDs) was investigated in the telecommunication wavelength range using a transient four-wave mixing technique. The sample was fabricated on an InP(311)B substrate using strain compensation to control the emission wavelength. This technique also enabled us to fabricate a 150-layer stacked QD structure for obtaining a high S/N in the four-wave mixing measurements, although no high-sensitive heterodyne detection was carried out. The dephasing time and transition dipole moment were precisely estimated from the polarization dependence of signals, taking into account their anisotropic properties. The population lifetimes of the excitons were also measured by using a polarization-dependent pumpprobe technique. A quantitative comparison of these anisotropies demonstrates that in our QDs, non-radiative population relaxation, polarization relaxation and pure dephasing are considerably smaller than the radiative relaxation. A comparison of the results of the four-wave mixing and pump-probe measurements revealed that the pure dephasing could be directly estimated with an accuracy of greater than 0.1 meV by comparing the results of four-wave mixing and pump-probe measurements. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Impact of Relativistic Electron Beam on Hole Acoustic Instability in Quantum Semiconductor Plasmas
Siddique, M.; Jamil, M.; Rasheed, A.; Areeb, F.; Javed, Asif; Sumera, P.
2018-01-01
We studied the influence of the classical relativistic beam of electrons on the hole acoustic wave (HAW) instability exciting in the semiconductor quantum plasmas. We conducted this study by using the quantum-hydrodynamic model of dense plasmas, incorporating the quantum effects of semiconductor plasma species which include degeneracy pressure, exchange-correlation potential and Bohm potential. Analysis of the quantum characteristics of semiconductor plasma species along with relativistic effect of beam electrons on the dispersion relation of the HAW is given in detail qualitatively and quantitatively by plotting them numerically. It is worth mentioning that the relativistic electron beam (REB) stabilises the HAWs exciting in semiconductor (GaAs) degenerate plasma.
Analysis of quantum semiconductor heterostructures by ballistic electron emission spectroscopy
Guthrie, Daniel K.
1998-09-01
The microelectronics industry is diligently working to achieve the goal of gigascale integration (GSI) by early in the 21st century. For the past twenty-five years, progress toward this goal has been made by continually scaling down device technology. Unfortunately, this trend cannot continue to the point of producing arbitrarily small device sizes. One possible solution to this problem that is currently under intensive study is the relatively new area of quantum devices. Quantum devices represent a new class of microelectronic devices that operate by utilizing the wave-like nature (reflection, refraction, and confinement) of electrons together with the laws of quantum mechanics to construct useful devices. One difficulty associated with these structures is the absence of measurement techniques that can fully characterize carrier transport in such devices. This thesis addresses this need by focusing on the study of carrier transport in quantum semiconductor heterostructures using a relatively new and versatile measurement technique known as ballistic electron emission spectroscopy (BEES). To achieve this goal, a systematic approach that encompasses a set of progressively more complex structures is utilized. First, the simplest BEES structure possible, the metal/semiconductor interface, is thoroughly investigated in order to provide a foundation for measurements on more the complex structures. By modifying the semiclassical model commonly used to describe the experimental BEES spectrum, a very complete and accurate description of the basic structure has been achieved. Next, a very simple semiconductor heterostructure, a Ga1-xAlxAs single-barrier structure, was measured and analyzed. Low-temperature measurements on this structure were used to investigate the band structure and electron-wave interference effects in the Ga1-xAlxAs single barrier structure. These measurements are extended to a simple quantum device by designing, measuring, and analyzing a set of
Leon, R.; Swift, G.; Magness, B.; Taylor, W.; Tang, Y.; Wang, K.; Dowd, P.; Zhang, Y.
2000-01-01
Successful implementation of technology using self-forming semiconductor Quantum Dots (QDs) has already demonstrated that temperature independent Dirac-delta density of states can be exploited in low current threshold QD lasers and QD infrared photodetectors.
Wannier-Frenkel hybrid exciton in organic-semiconductor quantum dot heterostructures
International Nuclear Information System (INIS)
Birman, Joseph L.; Huong, Nguyen Que
2007-01-01
The formation of a hybridization state of Wannier Mott exciton and Frenkel exciton in different hetero-structure configurations involving quantum dots is investigated. The hybrid excitons exist at the interfaces of the semiconductors quantum dots and the organic medium, having unique properties and a large optical non-linearity. The coupling at resonance is very strong and tunable by changing the parameters of the systems (dot radius, dot-dot distance, generation of the organic dendrites and the materials of the system etc...). Different semiconductor quantum dot-organic material combination systems have been considered such as a semiconductor quantum dot lattice embedded in an organic host, a semiconductor quantum dot at the center of an organic dendrite, a semiconductor quantum dot coated by an organic shell
Photoluminescence intermittency of semiconductor quantum dots in dielectric environments
Energy Technology Data Exchange (ETDEWEB)
Isaac, A.
2006-08-11
The experimental studies presented in this thesis deal with the photoluminescence intermittency of semiconductor quantum dots in different dielectric environments. Detailed analysis of intermittency statistics from single capped CdSe/ZnS, uncapped CdSe and water dispersed CdSe/ZnS QDs in different matrices provide experimental evidence for the model of photoionization with a charge ejected into the surrounding matrix as the source of PL intermittency phenomenon. We propose a self-trapping model to explain the increase of dark state lifetimes with the dielectric constant of the matrix. (orig.)
High-electric-field quantum transport theory for semiconductor superlattices
International Nuclear Information System (INIS)
Nguyen Hong Shon; Nazareno, H.N.
1995-12-01
Based on the Baym-Kadanoff-Keldysh nonequilibrium Green's functions technique, a quantum transport theory for semiconductor superlattices under high-electric field is developed. This theory is capable of considering collisional broadening, intra-collisional field effects and band transport and hopping regimes simultaneously. Numerical calculations for narrow-miniband superlattices in high electric field, when the hopping regime dominates are in reasonable agreement with experimental results and show a significant deviation from the Boltzmann theory. A semiphenomenological formula for current density in hopping regime is proposed. (author). 60 refs, 4 figs
Hartman effect in a Kane-type semiconductor quantum ring
International Nuclear Information System (INIS)
Cakmaktepe, S
2007-01-01
The Hartman effect for a tunnelling particle implies that group delay time is independent of the opaque barrier width. In the present study, the tunnelling delay time in the transmission mode is studied taking into account the real band structure of an InSb-type semiconductor quantum ring and compared with that of a parabolic band structure. The system considered in this study consists of a circular loop in the presence of Aharonov-Bohm flux. It is shown that while tunnelling through an opaque barrier, the group delay time for a given incident energy becomes independent of the barrier thickness as well as the magnitude of the flux
Activation of molecular catalysts using semiconductor quantum dots
Meyer, Thomas J [Chapel Hill, NC; Sykora, Milan [Los Alamos, NM; Klimov, Victor I [Los Alamos, NM
2011-10-04
Photocatalytic materials based on coupling of semiconductor nanocrystalline quantum dots (NQD) and molecular catalysts. These materials have capability to drive or catalyze non-spontaneous chemical reactions in the presence of visible radiation, ultraviolet radiation, or both. The NQD functions in these materials as a light absorber and charge generator. Following light absorption, the NQD activates a molecular catalyst adsorbed on the surface of the NQD via transfer of one or more charges (either electrons or electron-holes) from the NQD to the molecular catalyst. The activated molecular catalyst can then drive a chemical reaction. A photoelectrolytic device that includes such photocatalytic materials is also described.
Dynamics in terahertz semiconductor microcavity: quantum noise spectra
Jabri, H.; Eleuch, H.
2018-05-01
We investigate the physics of an optical semiconductor microcavity containing a coupled double quantum well interacting with cavity photons. The photon statistics of the transmitted light by the cavity is explored. We show that the nonlinear interactions in the direct and indirect excitonic modes generate an important squeezing despite the weak nonlinearities. When the strong coupling regime is achieved, the noise spectra of the system is dominated by the indirect exciton distribution. At the opposite, in the weak regime, direct excitons contribute much larger in the noise spectra.
DEFF Research Database (Denmark)
Sapienza, Luca; Nielsen, Henri Thyrrestrup; Stobbe, Søren
2011-01-01
of the spontaneous emission decay rate by up to a factor 15 and an efficiency of channeling single photons into Anderson-localized modes reaching values as high as 94%. These results prove that disordered photonic media provide an efficient platform for quantum electrodynamics, offering a novel route to quantum......We demonstrate that the spontaneous emission decay rate of semiconductor quantum dots can be strongly modified by the coupling to disorder-induced Anderson-localized photonic modes. We experimentally measure, by means of time-resolved photoluminescence spectroscopy, the enhancement...
Quantum-Confined Stark Effect in Ensemble of Colloidal Semiconductor Quantum Dots
International Nuclear Information System (INIS)
Zhi-Bing, Wang; Hui-Chao, Zhang; Jia-Yu, Zhang; Su, Huaipeng; Wang, Y. Andrew
2010-01-01
The presence of a strong, changing, randomly-oriented, local electric field, which is induced by the photo-ionization that occurs universally in colloidal semiconductor quantum dots (QDs), makes it difficult to observe the quantum-confined Stark effect in ensemble of colloidal QDs. We propose a way to inhibit such a random electric field, and a clear quantum-confined Stark shift is observed directly in close-packed colloidal QDs. Besides the applications in optical switches and modulators, our experimental results indicate how the oscillator strengths of the optical transitions are changed under external electric fields. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Quantum of optical absorption in two-dimensional semiconductors.
Fang, Hui; Bechtel, Hans A; Plis, Elena; Martin, Michael C; Krishna, Sanjay; Yablonovitch, Eli; Javey, Ali
2013-07-16
The optical absorption properties of free-standing InAs nanomembranes of thicknesses ranging from 3 nm to 19 nm are investigated by Fourier transform infrared spectroscopy. Stepwise absorption at room temperature is observed, arising from the interband transitions between the subbands of 2D InAs nanomembranes. Interestingly, the absorptance associated with each step is measured to be ∼1.6%, independent of thickness of the membranes. The experimental results are consistent with the theoretically predicted absorptance quantum, AQ = πα/nc for each set of interband transitions in a 2D semiconductor, where α is the fine structure constant and nc is an optical local field correction factor. Absorptance quantization appears to be universal in 2D systems including III-V quantum wells and graphene.
Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array.
Hensgens, T; Fujita, T; Janssen, L; Li, Xiao; Van Diepen, C J; Reichl, C; Wegscheider, W; Das Sarma, S; Vandersypen, L M K
2017-08-02
Interacting fermions on a lattice can develop strong quantum correlations, which are the cause of the classical intractability of many exotic phases of matter. Current efforts are directed towards the control of artificial quantum systems that can be made to emulate the underlying Fermi-Hubbard models. Electrostatically confined conduction-band electrons define interacting quantum coherent spin and charge degrees of freedom that allow all-electrical initialization of low-entropy states and readily adhere to the Fermi-Hubbard Hamiltonian. Until now, however, the substantial electrostatic disorder of the solid state has meant that only a few attempts at emulating Fermi-Hubbard physics on solid-state platforms have been made. Here we show that for gate-defined quantum dots this disorder can be suppressed in a controlled manner. Using a semi-automated and scalable set of experimental tools, we homogeneously and independently set up the electron filling and nearest-neighbour tunnel coupling in a semiconductor quantum dot array so as to simulate a Fermi-Hubbard system. With this set-up, we realize a detailed characterization of the collective Coulomb blockade transition, which is the finite-size analogue of the interaction-driven Mott metal-to-insulator transition. As automation and device fabrication of semiconductor quantum dots continue to improve, the ideas presented here will enable the investigation of the physics of ever more complex many-body states using quantum dots.
Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array
Hensgens, T.; Fujita, T.; Janssen, L.; Li, Xiao; van Diepen, C. J.; Reichl, C.; Wegscheider, W.; Das Sarma, S.; Vandersypen, L. M. K.
2017-08-01
Interacting fermions on a lattice can develop strong quantum correlations, which are the cause of the classical intractability of many exotic phases of matter. Current efforts are directed towards the control of artificial quantum systems that can be made to emulate the underlying Fermi-Hubbard models. Electrostatically confined conduction-band electrons define interacting quantum coherent spin and charge degrees of freedom that allow all-electrical initialization of low-entropy states and readily adhere to the Fermi-Hubbard Hamiltonian. Until now, however, the substantial electrostatic disorder of the solid state has meant that only a few attempts at emulating Fermi-Hubbard physics on solid-state platforms have been made. Here we show that for gate-defined quantum dots this disorder can be suppressed in a controlled manner. Using a semi-automated and scalable set of experimental tools, we homogeneously and independently set up the electron filling and nearest-neighbour tunnel coupling in a semiconductor quantum dot array so as to simulate a Fermi-Hubbard system. With this set-up, we realize a detailed characterization of the collective Coulomb blockade transition, which is the finite-size analogue of the interaction-driven Mott metal-to-insulator transition. As automation and device fabrication of semiconductor quantum dots continue to improve, the ideas presented here will enable the investigation of the physics of ever more complex many-body states using quantum dots.
Fano Effect and Quantum Entanglement in Hybrid Semiconductor Quantum Dot-Metal Nanoparticle System.
He, Yong; Zhu, Ka-Di
2017-06-20
In this paper, we review the investigation for the light-matter interaction between surface plasmon field in metal nanoparticle (MNP) and the excitons in semiconductor quantum dots (SQDs) in hybrid SQD-MNP system under the full quantum description. The exciton-plasmon interaction gives rise to the modified decay rate and the exciton energy shift which are related to the exciton energy by using a quantum transformation method. We illustrate the responses of the hybrid SQD-MNP system to external field, and reveal Fano effect shown in the absorption spectrum. We demonstrate quantum entanglement between two SQD mediated by surface plasmon field. In the absence of a laser field, concurrence of quantum entanglement will disappear after a few ns. If the laser field is present, the steady states appear, so that quantum entanglement produced will reach a steady-state entanglement. Because one of all optical pathways to induce Fano effect refers to the generation of quantum entangled states, It is shown that the concurrence of quantum entanglement can be obtained by observation for Fano effect. In a hybrid system including two MNP and a SQD, because the two Fano quantum interference processes share a segment of all optical pathways, there is correlation between the Fano effects of the two MNP. The investigations for the light-matter interaction in hybrid SQD-MNP system can pave the way for the development of the optical processing devices and quantum information based on the exciton-plasmon interaction.
Fano Effect and Quantum Entanglement in Hybrid Semiconductor Quantum Dot-Metal Nanoparticle System
Directory of Open Access Journals (Sweden)
Yong He
2017-06-01
Full Text Available In this paper, we review the investigation for the light-matter interaction between surface plasmon field in metal nanoparticle (MNP and the excitons in semiconductor quantum dots (SQDs in hybrid SQD-MNP system under the full quantum description. The exciton-plasmon interaction gives rise to the modified decay rate and the exciton energy shift which are related to the exciton energy by using a quantum transformation method. We illustrate the responses of the hybrid SQD-MNP system to external field, and reveal Fano effect shown in the absorption spectrum. We demonstrate quantum entanglement between two SQD mediated by surface plasmon field. In the absence of a laser field, concurrence of quantum entanglement will disappear after a few ns. If the laser field is present, the steady states appear, so that quantum entanglement produced will reach a steady-state entanglement. Because one of all optical pathways to induce Fano effect refers to the generation of quantum entangled states, It is shown that the concurrence of quantum entanglement can be obtained by observation for Fano effect. In a hybrid system including two MNP and a SQD, because the two Fano quantum interference processes share a segment of all optical pathways, there is correlation between the Fano effects of the two MNP. The investigations for the light-matter interaction in hybrid SQD-MNP system can pave the way for the development of the optical processing devices and quantum information based on the exciton-plasmon interaction.
International Nuclear Information System (INIS)
Yelin, S.F.; Hemmer, P.R.
2002-01-01
A novel class of coherent nonlinear optical phenomena, involving induced transparency in semiconductor quantum wells, is considered in the context of a particular application to sensitive long-wavelength infrared detection. It is shown that the strongest decoherence mechanisms can be suppressed or mitigated, resulting in substantial enhancement of nonlinear optical effects in semiconductor quantum wells
Artificially Structured Semiconductors to Model Novel Quantum Phenomena
Energy Technology Data Exchange (ETDEWEB)
Pinczuk, Aron [Columbia Univ., New York, NY (United States). Dept. of Applied Physics and Applied Mathematics; Wind, Shalom J. [Columbia Univ., New York, NY (United States). Dept. of Applied Physics and Applied Mathematics
2018-01-13
Award Period: September 1st, 2013 through February 15th, 2017 Submitted to the USDOE Office of Basic Energy Sciences By Aron Pinczuk and Shalom J. Wind Department of Applied Physics and Applied Mathematics Columbia University New York, NY 10027 January 2017 Award # DE-SC0010695 ABSTRACT Research in this project seeks to design, create and study a class of tunable artificial quantum structures in order to extend the range and scope of new and exciting physical phenomena and to explore the potential for new applications. Advanced nanofabrication was used to create an external potential landscape that acts as a lattice of confinement sites for electrons (and/or holes) in a two-dimensional electron gas in a high perfection semiconductor in such a manner that quantum interactions between different sites dictate the significant physics. Our current focus is on ‘artificial graphene’ (AG) in which a set of quantum dots (or sites) are patterned in a honeycomb lattice. The combination of leading edge nanofabrication with ultra-pure semiconductor materials in this project extends the frontier for small period, low-disorder AG systems, enabling the exploration of graphene physics in a semiconductor platform. TECHNICAL DESCRIPTION Contemporary condensed matter science has entered an era of discovery of new low-dimensional materials, such as graphene and other atomically thin materials, that exhibit exciting new physical phenomena that were previously inaccessible. Concurrent with the discovery and development of these new materials are impressive advancements in nanofabrication, which offer an ever-expanding toolbox for creating a myriad of high quality patterns at nanoscale dimensions. This project started about four years ago. Among its major achievements are the realizations of very small period artificial lattices with honeycomb topology in GaAs quantum wells. In our most recent work the periods of the ‘artificial graphene’ (AG) lattices extend down to 40 nm. These
Quantum control and process tomography of a semiconductor quantum dot hybrid qubit.
Kim, Dohun; Shi, Zhan; Simmons, C B; Ward, D R; Prance, J R; Koh, Teck Seng; Gamble, John King; Savage, D E; Lagally, M G; Friesen, Mark; Coppersmith, S N; Eriksson, Mark A
2014-07-03
The similarities between gated quantum dots and the transistors in modern microelectronics--in fabrication methods, physical structure and voltage scales for manipulation--have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. Although quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for important future applications, such as factoring. Furthermore, scalability and manufacturability are enhanced when qubits are as simple as possible. Previous work has increased the speed of spin qubit rotations by making use of integrated micromagnets, dynamic pumping of nuclear spins or the addition of a third quantum dot. Here we demonstrate a qubit that is a hybrid of spin and charge. It is simple, requiring neither nuclear-state preparation nor micromagnets. Unlike previous double-dot qubits, the hybrid qubit enables fast rotations about two axes of the Bloch sphere. We demonstrate full control on the Bloch sphere with π-rotation times of less than 100 picoseconds in two orthogonal directions, which is more than an order of magnitude faster than any other double-dot qubit. The speed arises from the qubit's charge-like characteristics, and its spin-like features result in resistance to decoherence over a wide range of gate voltages. We achieve full process tomography in our electrically controlled semiconductor quantum dot qubit, extracting high fidelities of 85 per cent for X rotations (transitions between qubit states) and 94 per cent for Z rotations (phase accumulation between qubit states).
Dynamics of Photoexcited State of Semiconductor Quantum Dots
Trivedi, Dhara J.
In this thesis, non-adiabatic molecular dynamics (NAMD) of excited states in semiconductor quantum dots are investigated. Nanoscale systems provide important opportunities for theory and computation for research because the experimental tools often provide an incomplete picture of the structure and/or function of nanomaterials, and theory can often fill in missing features crucial in understanding what is being measured. The simulation of NAMD is an indispensable tool for understanding complex ultrafast photoinduced processes such as charge and energy transfer, thermal relaxation, and charge recombination. Based on the state-of-the-art ab initio approaches in both the energy and time domains, the thesis presents a comprehensive discussion of the dynamical processes in quantum dots, ranging from the initial photon absorption to the final emission. We investigate the energy relaxation and transfer rates in pure and surface passivated quantum dots of different sizes. The study establishes the fundamental mechanisms of the electron and hole relaxation processes with and without hole traps. We develop and implement more accurate and efficient methods for NAMD. These methods are advantageous over the traditional ones when one encounters classically forbidden transitions. We also explore the effect of decoherence and non-adiabatic couplings on the dynamics. The results indicate significant influence on the accuracy and related computational cost of the simulated dynamics.
A classical-quantum coupling strategy for a hierarchy of one dimensional models for semiconductors
Jourdana, Clément; Pietra, Paola; Vauchelet, Nicolas
2014-01-01
We consider one dimensional coupled classical-quantum models for quantum semiconductor device simulations. The coupling occurs in the space variable : the domain of the device is divided into a region with strong quantum effects (quantum zone) and a region where quantum effects are negligible (classical zone). In the classical zone, transport in diffusive approximation is modeled through diffusive limits of the Boltzmann transport equation. This leads to a hierarchy of classical model. The qu...
Injection Locking of a Semiconductor Double Quantum Dot Micromaser.
Liu, Y-Y; Stehlik, J; Gullans, M J; Taylor, J M; Petta, J R
2015-11-01
Emission linewidth is an important figure of merit for masers and lasers. We recently demonstrated a semiconductor double quantum dot (DQD) micromaser where photons are generated through single electron tunneling events. Charge noise directly couples to the DQD energy levels, resulting in a maser linewidth that is more than 100 times larger than the Schawlow-Townes prediction. Here we demonstrate a linewidth narrowing of more than a factor 10 by locking the DQD emission to a coherent tone that is injected to the input port of the cavity. We measure the injection locking range as a function of cavity input power and show that it is in agreement with the Adler equation. The position and amplitude of distortion sidebands that appear outside of the injection locking range are quantitatively examined. Our results show that this unconventional maser, which is impacted by strong charge noise and electron-phonon coupling, is well described by standard laser models.
Semiconductor quantum dots for bioimaging and biodiagnostic applications.
Kairdolf, Brad A; Smith, Andrew M; Stokes, Todd H; Wang, May D; Young, Andrew N; Nie, Shuming
2013-01-01
Semiconductor quantum dots (QDs) are light-emitting particles on the nanometer scale that have emerged as a new class of fluorescent labels for chemical analysis, molecular imaging, and biomedical diagnostics. Compared with traditional fluorescent probes, QDs have unique optical and electronic properties such as size-tunable light emission, narrow and symmetric emission spectra, and broad absorption spectra that enable the simultaneous excitation of multiple fluorescence colors. QDs are also considerably brighter and more resistant to photobleaching than are organic dyes and fluorescent proteins. These properties are well suited for dynamic imaging at the single-molecule level and for multiplexed biomedical diagnostics at ultrahigh sensitivity. Here, we discuss the fundamental properties of QDs; the development of next-generation QDs; and their applications in bioanalytical chemistry, dynamic cellular imaging, and medical diagnostics. For in vivo and clinical imaging, the potential toxicity of QDs remains a major concern. However, the toxic nature of cadmium-containing QDs is no longer a factor for in vitro diagnostics, so the use of multicolor QDs for molecular diagnostics and pathology is probably the most important and clinically relevant application for semiconductor QDs in the immediate future.
Computer-automated tuning of semiconductor double quantum dots into the single-electron regime
Baart, T.A.; Eendebak, P.T.; Reichl, C.; Wegscheider, W.; Vandersypen, L.M.K.
2016-01-01
We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the
Theory of photovoltaic characteristics of semiconductor quantum dot solar cells
International Nuclear Information System (INIS)
Wu, Yuchang; Asryan, Levon V.
2016-01-01
We develop a comprehensive rate equations model for semiconductor quantum dot solar cells (QDSCs). The model is based on the continuity equations with a proper account for quantum dots (QDs). A general analytical expression for the total current density is obtained, and the current-voltage characteristic is studied for several specific situations. The degradation in the open circuit voltage of the QDSC is shown to be due to strong spontaneous radiative recombination in QDs. Due to small absorption coefficient of the QD ensemble, the improvement in the short circuit current density is negligible if only one QD layer is used. If spontaneous radiative recombination would be suppressed in QDs, a QDSC with multiple QD layers would have significantly higher short circuit current density and power conversion efficiency than its conventional counterpart. The effects of photoexcitation of carriers from discrete-energy states in QDs to continuum-energy states are discussed. An extended model, which includes excited states in QDs, is also introduced.
Theory of photovoltaic characteristics of semiconductor quantum dot solar cells
Energy Technology Data Exchange (ETDEWEB)
Wu, Yuchang, E-mail: yuchangw@cumt.edu.cn [Low Carbon Energy Institute, China University of Mining and Technology, Xuzhou 221116 (China); School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116 (China); Asryan, Levon V., E-mail: asryan@vt.edu [Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061 (United States)
2016-08-28
We develop a comprehensive rate equations model for semiconductor quantum dot solar cells (QDSCs). The model is based on the continuity equations with a proper account for quantum dots (QDs). A general analytical expression for the total current density is obtained, and the current-voltage characteristic is studied for several specific situations. The degradation in the open circuit voltage of the QDSC is shown to be due to strong spontaneous radiative recombination in QDs. Due to small absorption coefficient of the QD ensemble, the improvement in the short circuit current density is negligible if only one QD layer is used. If spontaneous radiative recombination would be suppressed in QDs, a QDSC with multiple QD layers would have significantly higher short circuit current density and power conversion efficiency than its conventional counterpart. The effects of photoexcitation of carriers from discrete-energy states in QDs to continuum-energy states are discussed. An extended model, which includes excited states in QDs, is also introduced.
Theoretical study of excitonic complexes in semiconductors quantum wells
International Nuclear Information System (INIS)
Dacal, Luis Carlos Ogando
2001-08-01
A physical system where indistinguishable particles interact with each other creates the possibility of studying correlation and exchange effect. The simplest system is that one with only two indistinguishable particles. In condensed matter physics, these complexes are represented by charged excitons, donors and acceptors. In quantum wells, the valence band is not parabolic, therefore, the negatively charged excitons and donors are theoretically described in a simpler way. Despite the fact that the stability of charged excitons (trions) is known since the late 50s, the first experimental observation occurred only at the early 90s in quantum well samples, where their binding energies are one order of magnitude larger due to the one dimensional carriers confinement. After this, these complexes became the subject of an intense research because the intrinsic screening of electrical interactions in semiconductor materials allows that magnetic fields that are usual in laboratories have strong effects on the trion binding energy. Another rich possibility is the study of trions as an intermediate state between the neutral exciton and the Fermi edge singularity when the excess of doping carriers is increased. In this thesis, we present a theoretical study of charged excitons and negatively charged donors in GaAs/Al 0.3 Ga 0.7 As quantum wells considering the effects of external electric and magnetic fields. We use a simple, accurate and physically clear method to describe these systems in contrast with the few and complex treatments s available in the literature. Our results show that the QW interface defects have an important role in the trion dynamics. This is in agreement with some experimental works, but it disagrees with other ones. (author)
Effect of interface roughness on Auger recombination in semiconductor quantum wells
Tan, Chee-Keong; Sun, Wei; Wierer, Jonathan J.; Tansu, Nelson
2017-03-01
Auger recombination in a semiconductor is a three-carrier process, wherein the energy from the recombination of an electron and hole pair promotes a third carrier to a higher energy state. In semiconductor quantum wells with increased carrier densities, the Auger recombination becomes an appreciable fraction of the total recombination rate and degrades luminescence efficiency. Gaining insight into the variables that influence Auger recombination in semiconductor quantum wells could lead to further advances in optoelectronic and electronic devices. Here we demonstrate the important role that interface roughness has on Auger recombination within quantum wells. Our computational studies find that as the ratio of interface roughness to quantum well thickness is increased, Auger recombination is significantly enhanced. Specifically, when considering a realistic interface roughness for an InGaN quantum well, the enhancement in Auger recombination rate over a quantum well with perfect heterointerfaces can be approximately four orders of magnitude.
Opto-electronic and quantum transport properties of semiconductor nanostructures
Energy Technology Data Exchange (ETDEWEB)
Sabathil, M.
2005-01-01
In this work a novel and efficient method for the calculation of the ballistic transport properties of open semiconductor nanostructures connected to external reservoirs is presented. It is based on the Green's function formalism and reduces the effort to obtain the transmission and the carrier density to a single solution of a hermitian eigenvalue problem with dimensions proportional to the size of the decoupled device and the multiple inversion of a small matrix with dimensions proportional to the size of the contacts to the leads. Using this method, the 4-band GaAs hole transport through a 2-dimensional three-terminal T-junction device, and the resonant tunneling current through a 3-dimensional InAs quantum dot molecule embedded into an InP heterostructure have been calculated. The further extension of the method into a charge self-consistent scheme enables the efficient prediction of the IV-characteristics of highly doped nanoscale field effect transistors in the ballistic regime, including the influence of quasi bound states and the exchange-correlation interaction. Buettiker probes are used to emulate the effect of inelastic scattering on the current for simple 1D devices, systematically analyzing the dependence of the density of states and the resulting self-consistent potential on the scattering strength. The second major topic of this work is the modeling of the optical response of quantum confined neutral and charged excitons in single and coupled self-assembled InGaAs quantum dots. For this purpose the existing device simulator nextnano{sup 3} has been extended to incorporate particle-particle interactions within the means of density functional theory in local density approximation. In this way the exciton transition energies for neutral and charged excitons as a function of an externally applied electric field have been calculated, revealing a systematic reduction of the intrinsic dipole with the addition of extra holes to the exciton, a finding
Simultaneous deterministic control of distant qubits in two semiconductor quantum dots.
Gamouras, A; Mathew, R; Freisem, S; Deppe, D G; Hall, K C
2013-10-09
In optimal quantum control (OQC), a target quantum state of matter is achieved by tailoring the phase and amplitude of the control Hamiltonian through femtosecond pulse-shaping techniques and powerful adaptive feedback algorithms. Motivated by recent applications of OQC in quantum information science as an approach to optimizing quantum gates in atomic and molecular systems, here we report the experimental implementation of OQC in a solid-state system consisting of distinguishable semiconductor quantum dots. We demonstrate simultaneous high-fidelity π and 2π single qubit gates in two different quantum dots using a single engineered infrared femtosecond pulse. These experiments enhance the scalability of semiconductor-based quantum hardware and lay the foundation for applications of pulse shaping to optimize quantum gates in other solid-state systems.
Hybrid confocal Raman fluorescence microscopy on single cells using semiconductor quantum dots
van Manen, H.J.; Otto, Cornelis
2007-01-01
We have overcome the traditional incompatibility of Raman microscopy with fluorescence microscopy by exploiting the optical properties of semiconductor fluorescent quantum dots (QDs). Here we present a hybrid Raman fluorescence spectral imaging approach for single-cell microscopy applications. We
Directory of Open Access Journals (Sweden)
G. V. Vertsimakha
2011-09-01
Full Text Available Spreading of the potential profile for the charge carriers in quantum dots in binary semiconductors and the shift of the quantum levels for electrons, holes and excitons under the nuclear irradiation has been investigated. The spreading occurs because of the redistribution of atoms of different kinds between the barrier and quantum dot due to radiationenhanced diffusion. It is shown that in semimagnetic semiconductors (e.g. CdTe/(Cd, MnTe, in which a giant magnetic splitting of exciton levels exists, the redistribution of magnetic ions under irradiation causes significant increase in the splitting of exciton levels in a magnetic field in a quantum dot.
International Nuclear Information System (INIS)
Chemla, D.S.
1993-01-01
This article reviews recent investigations of nonlinear optical processes in semiconductors. Section II discusses theory of coherent wave mixing in semiconductors, with emphasis on resonant excitation with only one exciton state. Section III reviews recent experimental investigations of amplitude and phase of coherent wave-mixing resonant with quasi-2d excitons in GaAs quantum wells
Derivation and Numerical Approximation of the Quantum Drift Diffusion Model for Semiconductors
International Nuclear Information System (INIS)
Ohnmar Nwe
2004-06-01
This paper is concerned with the study of the quantum drift diffusion equation for semiconductors. Derivation of the mathematical model, which describes the electeon flow through a semiconductor device due to the application of a voltage, is considered and studied in numerical point of view by using some methods
International Nuclear Information System (INIS)
Bouchard, A.M.
1994-01-01
This report discusses the following topics: Bloch oscillations and other dynamical phenomena of electrons in semiconductor superlattices; solvable dynamical model of an electron in a one-dimensional aperiodic lattice subject to a uniform electric field; and quantum dynamical phenomena of electrons in aperiodic semiconductor superlattices
Energy Technology Data Exchange (ETDEWEB)
Duc, Huynh Thanh; Foerstner, Jens; Meier, Torsten [Department of Physics and CeOPP, University Paderborn (Germany); Priyadarshi, Shekar; Racu, Ana Maria; Pierz, Klaus; Siegner, Uwe; Bieler, Mark [Physikalisch-Technische Bundesanstalt, Braunschweig (Germany)
2010-07-01
We compute photocurrents generated by femtosecond single-color laser pulses in non-centrosymmetric semiconductor quantum wells by combining a 14 x 14 k.p band structure theory with multi-band semiconductor Bloch equations. The transient photocurrents are investigated experimentally by measuring the associated Terahertz emission. The dependencies of the photocurrent and the Terahertz emission on the excitation conditions are discussed for (110)-oriented GaAs quantum wells. The comparison between theory and experiment shows a good agreement.
Computer-automated tuning of semiconductor double quantum dots into the single-electron regime
Energy Technology Data Exchange (ETDEWEB)
Baart, T. A.; Vandersypen, L. M. K. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Eendebak, P. T. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft (Netherlands); Reichl, C.; Wegscheider, W. [Solid State Physics Laboratory, ETH Zürich, 8093 Zürich (Switzerland)
2016-05-23
We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.
Energy Technology Data Exchange (ETDEWEB)
Weber, Carsten
2008-07-01
This work is focused on the optical dynamics of mesoscopic semiconductor heterostructures, using as prototypes zero-dimensional quantum dots and quantum cascade lasers which consist of quasitwo- dimensional quantum wells. Within a density matrix theory, a microscopic many-particle theory is applied to study scattering effects in these structures: the coupling to external as well as local fields, electron-phonon coupling, coupling to impurities, and Coulomb coupling. For both systems, the investigated effects are compared to experimentally observed results obtained during the past years. In quantum dots, the three-dimensional spatial confinement leads to the necessity to consider a quantum kinetic description of the dynamics, resulting in non-Markovian electron-phonon effects. This can be seen in the spectral phonon sidebands due to interaction with acoustic phonons as well as a damping of nonlinear Rabi oscillations which shows a nonmonotonous intensity and pulse duration dependence. An analysis of the inclusion of the self-interaction of the quantum dot shows that no dynamical local field terms appear for the simple two-level model. Considering local fields which have their origin in many quantum dots, consequences for a two-level quantum dot such as a zero-phonon line broadening and an increasing signal in photon echo experiments are found. For the use of quantum dots in an optical spin control scheme, it is found that the dephasing due to the electron-phonon interaction can be dominant in certain regimes. Furthermore, soliton and breather solutions are studied analytically in nonlinear quantum dot ensembles. Generalizing to quasi-two-dimensional structures, the intersubband dynamics of quantum cascade laser structures is investigated. A dynamical theory is considered in which the temporal evolution of the subband populations and the current density as well as the influence of scattering effects is studied. In the nonlinear regime, the scattering dependence and
Probing dopants in wide semiconductor quantum point contacts
International Nuclear Information System (INIS)
Yakimenko, I I; Berggren, K-F
2016-01-01
Effects of randomly distributed impurities on conductance, spin polarization and electron localization in realistic gated semiconductor quantum point contacts (QPCs) have been simulated numerically. To this end density functional theory in the local spin-density approximation has been used. In the case when the donor layer is embedded far from the two-dimensional electron gas (2DEG) the electrostatic confinement potential exhibits the conventional parabolic form, and thus the usual ballistic transport phenomena take place both in the devices with split gates alone and with an additional metallic gate on the top. In the opposite case, i.e. when the randomly distributed donors are placed not far away from the 2DEG layer, there are drastic changes like the localization of electrons in the vicinity of confinement potential minima which give rise to fluctuations in conductance and resonances. The conductance as a function of the voltage applied to the top gate for asymmetrically charged split gates has been calculated. In this case resonances in conductance caused by randomly distributed donors are shifted and decrease in amplitude while the anomalies caused by interaction effects remain unmodified. It has been also shown that for a wide QPC the polarization can appear in the form of stripes. The importance of partial ionization of the random donors and the possibility of short range order among the ionized donors are emphasized. The motivation for this work is to critically evaluate the nature of impurities and how to guide the design of high-mobility devices. (paper)
Transport through semiconductor nanowire quantum dots in the Kondo regime
Energy Technology Data Exchange (ETDEWEB)
Schmaus, Stefan; Koerting, Verena; Woelfle, Peter [Institut fuer Theorie der Kondensierten Materie, Universitaet Karlsruhe, Wolfgang-Gaede-Strasse 1, 76131 Karlsruhe (Germany)
2008-07-01
Recent experiments on quantum dots made of semiconductor nanowires in the Coulomb blockade regime have shown the influence of several approximately equidistant levels on the conductance. We study a model with three levels occupied by three electrons. At finite bias voltage charge energy conserving excitations into several higher lying states occur leading to features in the differential conductance. We restrict our study to the six lowest lying states by performing a Schrieffer-Wolff type projection onto this subspace. The emerging effective Kondo Hamiltonian is treated in non-equilibrium perturbation theory in the coupling to the leads. For convenience we use a pseudoparticle representation and an exact projection method. The voltage-dependence of the occupation numbers is discussed. The density matrix on the dot turns out to be off-diagonal in the dot eigenstate Hilbert space in certain parameter regimes. The dependence of the differential conductance on magnetic field and temperature is calculated in lowest order in the dot-lead coupling and the results are compared with experiment.
Towards quantum optics and entanglement with electron spin ensembles in semiconductors
van der Wal, Caspar H.; Sladkov, Maksym
We discuss a technique and a material system that enable the controlled realization of quantum entanglement between spin-wave modes of electron ensembles in two spatially separated pieces of semiconductor material. The approach uses electron ensembles in GaAs quantum wells that are located inside
International Nuclear Information System (INIS)
2000-01-01
This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.
Quantum Effects in the Thermoelectric Power Factor of Low-Dimensional Semiconductors.
Hung, Nguyen T; Hasdeo, Eddwi H; Nugraha, Ahmad R T; Dresselhaus, Mildred S; Saito, Riichiro
2016-07-15
We theoretically investigate the interplay between the confinement length L and the thermal de Broglie wavelength Λ to optimize the thermoelectric power factor of semiconducting materials. An analytical formula for the power factor is derived based on the one-band model assuming nondegenerate semiconductors to describe quantum effects on the power factor of the low-dimensional semiconductors. The power factor is enhanced for one- and two-dimensional semiconductors when L is smaller than Λ of the semiconductors. In this case, the low-dimensional semiconductors having L smaller than their Λ will give a better thermoelectric performance compared to their bulk counterpart. On the other hand, when L is larger than Λ, bulk semiconductors may give a higher power factor compared to the lower dimensional ones.
Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons
Wolters, Janik; Buser, Gianni; Horsley, Andrew; Béguin, Lucas; Jöckel, Andreas; Jahn, Jan-Philipp; Warburton, Richard J.; Treutlein, Philipp
2017-08-01
Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of δ f =0.66 GHz , the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For a 50 ns storage time, we measure ηe2 e 50 ns=3.4 (3 )% end-to-end efficiency of the fiber-coupled memory, with a total intrinsic efficiency ηint=17 (3 )%. Straightforward technological improvements can boost the end-to-end-efficiency to ηe 2 e≈35 %; beyond that, increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional read-out noise level of 9 ×10-3 photons is dominated by atomic fluorescence, and for input pulses containing on average μ1=0.27 (4 ) photons, the signal to noise level would be unity.
Broadband tunability of gain-flattened quantum-well semiconductor lasers with an external grating
International Nuclear Information System (INIS)
Mittelstein, M.; Mehuys, D.; Yariv, A.; Sarfaty, R.; Ungar, J.E.
1989-01-01
Semiconductor injection lasers are known to be tunable over a range of order kΒ · T. Quantum-well lasers, in particular, are shown to exhibit flattened, broadband gain spectra at a particular pumping condition. The gain requirement for a grating-tuned external cavity configuration is examined and is applied to a semiconductor quantum-well laser with an optimized length of gain region. The coupled-cavity formalism is employed to examine the conditions for continuous tuning. The possible tuning range of double-heterostructure lasers is compared to that of quantum-well lasers. The predicted broadband tunability of quantum-well lasers is confirmed experimentally by grating-tuning of uncoated lasers exceeding 120 nm, with single, longitudinal mode output power exceeding 300 mW
A semiclassical method in the theory of light scattering by semiconductor quantum dots
International Nuclear Information System (INIS)
Lang, I. G.; Korovin, L. I.; Pavlov, S. T.
2008-01-01
A semiclassical method is proposed for the theoretical description of elastic light scattering by arbitrary semiconductor quantum dots under conditions of size quantization. This method involves retarded potentials and allows one to dispense with boundary conditions for electric and magnetic fields. Exact results for the Umov-Poynting vector at large distances from quantum dots in the case of monochromatic and pulsed irradiation and formulas for differential scattering cross sections are obtained
Thermal activation of carriers from semiconductor quantum wells
International Nuclear Information System (INIS)
Johnston, M.B.; Herz, L.M.; Dao, L.V.; Gal, M.; Tan, H.H.; Jagadish, C.
1999-01-01
Full text: We have conducted a systematic investigation of the thermal excitation of carriers in confined states of quantum wells. Carriers may be injected into a sample containing a quantum well electrically or optically, once there they rapidly thermalise and are captured by the confined state of the quantum well. Typically electrons and holes recombine radiatively from their respective quantum well states. As a quantum well sample is heated from low temperatures (∼10K), phonon interactions increase which leads to carriers being excited from the well region into the higher energy, barrier region of the sample. Since carrier recombination from barrier regions is via non-radiative processes, there is strong temperature dependence of photoluminescence from the quantum well region. We measured quantum well photoluminescence as a function of excitation intensity and wavelength over the temperature range from 8K to 300K. In high quality InGaAs quantum wells we found unexpected intensity dependence of the spectrally integrated temperature dependent photoluminescence. We believe that this is evidence for by the existence of saturable states at the interfaces of the quantum wells
Quantum Mechanical Balance Equation Approach to Semiconductor Device Simulation
National Research Council Canada - National Science Library
Cui, Long
1997-01-01
This research project was focused on the development of a quantum mechanical balance equation based device simulator that can model advanced, compound, submicron devices, under all transport conditions...
Optical properties and quantum confinement of nanocrystalline II-IV semiconductor particles
Dijken, Albert van
1999-01-01
In this thesis, experiments are described that were performed on suspensions of nanocrystalline II-IV semiconductor particles.The object of this research is to study quantum size effects in relation to the luminescence properties of these particles. A pre-requisite for performing studies of
Semiconductor quantum dots: synthesis and water-solubilization for biomedical applications.
Yu, William W
2008-10-01
Quantum dots (QDs) are generally nanosized inorganic particles. They have distinctive size-dependent optical properties due to their very small size (mostly semiconductor QDs (mainly metal-chalcogenide compounds) and forming biocompatible structures for biomedical applications are discussed in this paper. This information may facilitate the research to create new materials/technologies for future clinical applications.
Self-slowdown and -advancement of fs pulses in a quantum-dot semiconductor optical amplifier
DEFF Research Database (Denmark)
Poel, Mike van der; Mørk, Jesper; Hvam, Jørn Märcher
2005-01-01
We demonstrate changes in the propagation time of 180 femtosecond pulses in a quantum-dot semiconductor optical amplifier as function of pulse input power and bias current. The results interpreted as a result of pulse reshaping by gain saturation but are also analogous to coherent population osci...
DEFF Research Database (Denmark)
Dery, H.; Tromborg, Bjarne; Eisenstein, G.
2003-01-01
We describe carrier-carrier scattering dynamics in an inverted quantum well structure including the nonparabolic nature of the valance band. A solution of the semiconductor Bloch equations yields strong evidence to a large change in the temporal evolution of the carrier distributions compared to ...
DEFF Research Database (Denmark)
Mørk, Jesper; Berg, Tommy Winther; Magnúsdóttir, Ingibjörg
2003-01-01
We discuss the dynamical properties of semiconductor optical amplifiers and the importance for all-optical signal processing. In particular, the dynamics of quantum dot amplifiers is considered and it is suggested that these may be operated at very high bit-rates without significant patterning...
Quantum wells, wires and dots theoretical and computational physics of semiconductor nanostructures
Harrison, Paul
2016-01-01
Quantum Wells, Wires and Dots provides all the essential information, both theoretical and computational, to develop an understanding of the electronic, optical and transport properties of these semiconductor nanostructures. The book will lead the reader through comprehensive explanations and mathematical derivations to the point where they can design semiconductor nanostructures with the required electronic and optical properties for exploitation in these technologies. This fully revised and updated 4th edition features new sections that incorporate modern techniques and extensive new material including: - Properties of non-parabolic energy bands - Matrix solutions of the Poisson and Schrodinger equations - Critical thickness of strained materials - Carrier scattering by interface roughness, alloy disorder and impurities - Density matrix transport modelling -Thermal modelling Written by well-known authors in the field of semiconductor nanostructures and quantum optoelectronics, this user-friendly guide is pr...
QCAD simulation and optimization of semiconductor double quantum dots
Energy Technology Data Exchange (ETDEWEB)
Nielsen, Erik; Gao, Xujiao; Kalashnikova, Irina; Muller, Richard Partain; Salinger, Andrew Gerhard; Young, Ralph Watson
2013-12-01
We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling quantum devices, particularly silicon double quantum dots (DQDs) developed for quantum qubits. The simulator has three di erentiating features: (i) its core contains nonlinear Poisson, e ective mass Schrodinger, and Con guration Interaction solvers that have massively parallel capability for high simulation throughput, and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; (iii) it couples with an optimization engine Dakota that enables optimization of gate voltages in DQDs for multiple desired targets. The Poisson solver includes Maxwell- Boltzmann and Fermi-Dirac statistics, supports Dirichlet, Neumann, interface charge, and Robin boundary conditions, and includes the e ect of dopant incomplete ionization. The solver has shown robust nonlinear convergence even in the milli-Kelvin temperature range, and has been extensively used to quickly obtain the semiclassical electrostatic potential in DQD devices. The self-consistent Schrodinger-Poisson solver has achieved robust and monotonic convergence behavior for 1D/2D/3D quantum devices at very low temperatures by using a predictor-correct iteration scheme. The QCAD simulator enables the calculation of dot-to-gate capacitances, and comparison with experiment and between solvers. It is observed that computed capacitances are in the right ballpark when compared to experiment, and quantum con nement increases capacitance when the number of electrons is xed in a quantum dot. In addition, the coupling of QCAD with Dakota allows to rapidly identify which device layouts are more likely leading to few-electron quantum dots. Very efficient QCAD simulations on a large number of fabricated and proposed Si DQDs have made it possible to provide fast feedback for design
Spin relaxation in semiconductor quantum rings and dots--a comparative study.
Zipper, Elżbieta; Kurpas, Marcin; Sadowski, Janusz; Maśka, Maciej M
2011-03-23
We calculate spin relaxation times due to spin-orbit-mediated electron-phonon interactions for experimentally accessible semiconductor quantum ring and dot architectures. We elucidate the differences between the two systems due to different confinement. The estimated relaxation times (at B = 1 T) are in the range between a few milliseconds to a few seconds. This high stability of spin in a quantum ring allows us to test it as a spin qubit. A brief discussion of quantum state manipulations with such a qubit is presented.
Fine structure and optical pumping of spins in individual semiconductor quantum dots
Bracker, Allan S.; Gammon, Daniel; Korenev, Vladimir L.
2008-11-01
We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information.
Fine structure and optical pumping of spins in individual semiconductor quantum dots
International Nuclear Information System (INIS)
Bracker, Allan S; Gammon, Daniel; Korenev, Vladimir L
2008-01-01
We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information
Andreev molecules in semiconductor nanowire double quantum dots.
Su, Zhaoen; Tacla, Alexandre B; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Daley, Andrew J; Pekker, David; Frolov, Sergey M
2017-09-19
Chains of quantum dots coupled to superconductors are promising for the realization of the Kitaev model of a topological superconductor. While individual superconducting quantum dots have been explored, control of longer chains requires understanding of interdot coupling. Here, double quantum dots are defined by gate voltages in indium antimonide nanowires. High transparency superconducting niobium titanium nitride contacts are made to each of the dots in order to induce superconductivity, as well as probe electron transport. Andreev bound states induced on each of dots hybridize to define Andreev molecular states. The evolution of these states is studied as a function of charge parity on the dots, and in magnetic field. The experiments are found in agreement with a numerical model.Quantum dots in a nanowire are one possible approach to creating a solid-state quantum simulator. Here, the authors demonstrate the coupling of electronic states in a double quantum dot to form Andreev molecule states; a potential building block for longer chains suitable for quantum simulation.
Second-harmonic imaging of semiconductor quantum dots
DEFF Research Database (Denmark)
Østergaard, John Erland; Bozhevolnyi, Sergey I.; Pedersen, Kjeld
2000-01-01
Resonant second-harmonic generation is observed at room temperature in reflection from self-assembled InAlGaAs quantum dots grown on a GaAs (001) substrate. The detected second-harmonic signal peaks at a pump wavelength of similar to 885 nm corresponding to the quantum-dot photoluminescence maximum....... In addition, the second-harmonic spectrum exhibits another smaller but well-pronounced peak at 765 nm not found in the linear experiments. We attribute this peak to the generation of second-harmonic radiation in the AlGaAs spacer layer enhanced by the local symmetry at the quantum-dot interface. We further...
International Nuclear Information System (INIS)
Htoon, H.; Shih, C.K.; Takagahara, T.
2003-01-01
We performed extensive studies on quantum decoherence processes of excitons trapped in the various excited states of SAQDs. Energy level structure and dephasing times of excited states were first determined by conducting photoluminescence excitation spectroscopy and wave-packet interferometry on a large number of individual SAQDs. This large statistical basis allows us to extract the correlation between the energy level structure and dephasing times. The major decoherence mechanisms and their active regime were identified from this correlation. A significant suppression of decoherence was also observed in some of the energetically isolated excited states, providing an experimental evidence for the theoretical prediction, known as 'phonon bottleneck effect'. Furthermore, we observed the direct experimental evidence of Rabi oscillation in these excited states with long decoherence times. In addition, a new type of quantum interference (QI) phenomenon was discovered in the wave-packet interferometry experiments performed in the strong excitation regime where the non-linear effects of Rabi oscillation become important. Detailed theoretical investigations attribute this phenomenon to the coherent dynamics resulting from the interplay of Rabi oscillation and QI
Cho, Kyung-Sang; Heo, Keun; Baik, Chan-Wook; Choi, Jun Young; Jeong, Heejeong; Hwang, Sungwoo; Lee, Sang Yeol
2017-10-10
We report color-selective photodetection from intermediate, monolayered, quantum dots buried in between amorphous-oxide semiconductors. The proposed active channel in phototransistors is a hybrid configuration of oxide-quantum dot-oxide layers, where the gate-tunable electrical property of silicon-doped, indium-zinc-oxide layers is incorporated with the color-selective properties of quantum dots. A remarkably high detectivity (8.1 × 10 13 Jones) is obtained, along with three major findings: fast charge separation in monolayered quantum dots; efficient charge transport through high-mobility oxide layers (20 cm 2 V -1 s -1 ); and gate-tunable drain-current modulation. Particularly, the fast charge separation rate of 3.3 ns -1 measured with time-resolved photoluminescence is attributed to the intermediate quantum dots buried in oxide layers. These results facilitate the realization of efficient color-selective detection exhibiting a photoconductive gain of 10 7 , obtained using a room-temperature deposition of oxide layers and a solution process of quantum dots. This work offers promising opportunities in emerging applications for color detection with sensitivity, transparency, and flexibility.The development of highly sensitive photodetectors is important for image sensing and optical communication applications. Cho et al., report ultra-sensitive photodetectors based on monolayered quantum dots buried in between amorphous-oxide semiconductors and demonstrate color-detecting logic gates.
Nodal ground states and orbital textures in semiconductor quantum dots
Czech Academy of Sciences Publication Activity Database
Lee, J.; Výborný, Karel; Han, J.E.; Žutič, I.
2014-01-01
Roč. 89, č. 4 (2014), "045315-1"-"045315-17" ISSN 1098-0121 Institutional support: RVO:68378271 Keywords : quantum dots * electronic structure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014
Light Scattering Spectroscopies of Semiconductor Nanocrystals (Quantum Dots)
International Nuclear Information System (INIS)
Yu, Peter Y; Gardner, Grat; Nozaki, Shinji; Berbezier, Isabelle
2006-01-01
We review the study of nanocrystals or quantum dots using inelastic light scattering spectroscopies. In particular recent calculations of the phonon density of states and low frequency Raman spectra in Ge nanocrystals are presented for comparison with experimental results
Ultrafast optical signal processing using semiconductor quantum dot amplifiers
DEFF Research Database (Denmark)
Berg, Tommy Winther; Mørk, Jesper
2002-01-01
The linear and nonlinear properties of quantum dot amplifiers are discussed on the basis of an extensive theoretical model. These devices show great potential for linear amplification as well as ultrafast signal processing.......The linear and nonlinear properties of quantum dot amplifiers are discussed on the basis of an extensive theoretical model. These devices show great potential for linear amplification as well as ultrafast signal processing....
Noise and saturation properties of semiconductor quantum dot optical amplifiers
DEFF Research Database (Denmark)
Berg, Tommy Winther; Mørk, Jesper
2002-01-01
We present a detailed theoretical analysis of quantum dot optical amplifiers. Due to the presence of a reservoir of wetting layer states, the saturation and noise properties differ markedly from bulk or QW amplifiers and may be significantly improved.......We present a detailed theoretical analysis of quantum dot optical amplifiers. Due to the presence of a reservoir of wetting layer states, the saturation and noise properties differ markedly from bulk or QW amplifiers and may be significantly improved....
Henderson, Gregory Newell
Semiconductor device dimensions are rapidly approaching a fundamental limit where drift-diffusion equations and the depletion approximation are no longer valid. In this regime, quantum effects can dominate device response. To increase further device density and speed, new devices must be designed that use these phenomena to positive advantage. In addition, quantum effects provide opportunities for a new class of devices which can perform functions previously unattainable with "conventional" semiconductor devices. This thesis has described research in the analysis of electron wave effects in semiconductors and the development of methods for the design, fabrication, and characterization of quantum devices based on these effects. First, an exact set of quantitative analogies are presented which allow the use of well understood optical design and analysis tools for the development of electron wave semiconductor devices. Motivated by these analogies, methods are presented for modeling electron wave grating diffraction using both an exact rigorous coupled-wave analysis and approximate analyses which are useful for grating design. Example electron wave grating switch and multiplexer designs are presented. In analogy to thin-film optics, the design and analysis of electron wave Fabry-Perot interference filters are also discussed. An innovative technique has been developed for testing these (and other) electron wave structures using Ballistic Electron Emission Microscopy (BEEM). This technique uses a liquid-helium temperature scanning tunneling microscope (STM) to perform spectroscopy of the electron transmittance as a function of electron energy. Experimental results show that BEEM can resolve even weak quantum effects, such as the reflectivity of a single interface between materials. Finally, methods are discussed for incorporating asymmetric electron wave Fabry-Perot filters into optoelectronic devices. Theoretical and experimental results show that such structures could
Emergence of resonant mode-locking via delayed feedback in quantum dot semiconductor lasers.
Tykalewicz, B; Goulding, D; Hegarty, S P; Huyet, G; Erneux, T; Kelleher, B; Viktorov, E A
2016-02-22
With conventional semiconductor lasers undergoing external optical feedback, a chaotic output is typically observed even for moderate levels of the feedback strength. In this paper we examine single mode quantum dot lasers under strong optical feedback conditions and show that an entirely new dynamical regime is found consisting of spontaneous mode-locking via a resonance between the relaxation oscillation frequency and the external cavity repetition rate. Experimental observations are supported by detailed numerical simulations of rate equations appropriate for this laser type. The phenomenon constitutes an entirely new mode-locking mechanism in semiconductor lasers.
Exploring semiconductor quantum dots and wires by high resolution electron microscopy
Energy Technology Data Exchange (ETDEWEB)
Molina, S I [Departamento de Ciencia de los Materiales e Ing Metalurgica y Q. Inorganica, F. de Ciencias, Universidad de Cadiz, Campus Rio San Pedro. 11510 Puerto Real (Cadiz) (Spain); Galindo, P L [Departamento de Lenguajes y Sistemas Informaticos, CASEM, Universidad de Cadiz, Campus Rio San Pedro. 11510 Puerto Real (Cadiz) (Spain); Gonzalez, L; Ripalda, J M [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760 Tres Cantos, Madrid (Spain); Varela, M; Pennycook, S J, E-mail: sergio.molina@uca.e [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge TN 37831 (United States)
2010-02-01
We review in this communication our contribution to the structural characterisation of semiconductor quantum dots and wires by high resolution electron microscopy, both in phase-contrast and Z-contrast modes. We show how these techniques contribute to predict the preferential sites of nucleation of these nanostructures, and also determine the compositional distribution in 1D and 0D nanostructures. The results presented here were produced in the framework of the European Network of Excellence entitled {sup S}elf-Assembled semiconductor Nanostructures for new Devices in photonics and Electronics (SANDiE){sup .}
Efficient calculation of dissipative quantum transport properties in semiconductor nanostructures
Energy Technology Data Exchange (ETDEWEB)
Greck, Peter
2012-11-26
We present a novel quantum transport method that follows the non-equilibrium Green's function (NEGF) framework but side steps any self-consistent calculation of lesser self-energies by replacing them by a quasi-equilibrium expression. We termed this method the multi-scattering Buettiker-Probe (MSB) method. It generalizes the so-called Buettiker-Probe model but takes into account all relevant individual scattering mechanisms. It is orders of magnitude more efficient than a fully selfconsistent non-equilibrium Green's function calculation for realistic devices, yet accurately reproduces the results of the latter method as well as experimental data. This method is fairly easy to implement and opens the path towards realistic three-dimensional quantum transport calculations. In this work, we review the fundamentals of the non-equilibrium Green's function formalism for quantum transport calculations. Then, we introduce our novel MSB method after briefly reviewing the original Buettiker-Probe model. Finally, we compare the results of the MSB method to NEGF calculations as well as to experimental data. In particular, we calculate quantum transport properties of quantum cascade lasers in the terahertz (THz) and the mid-infrared (MIR) spectral domain. With a device optimization algorithm based upon the MSB method, we propose a novel THz quantum cascade laser design. It uses a two-well period with alternating barrier heights and complete carrier thermalization for the majority of the carriers within each period. We predict THz laser operation for temperatures up to 250 K implying a new temperature record.
Photo-Induced Spin Dynamics in Semiconductor Quantum Wells.
Miah, M Idrish
2009-01-17
We experimentally investigate the dynamics of spins in GaAs quantum wells under applied electric bias by photoluminescence (PL) measurements excited with circularly polarized light. The bias-dependent circular polarization of PL (P(PL)) with and without magnetic field is studied. The P(PL) without magnetic field is found to be decayed with an enhancement of increasing the strength of the negative bias. However, P(PL) in a transverse magnetic field shows oscillations under an electric bias, indicating that the precession of electron spin occurs in quantum wells. The results are discussed based on the electron-hole exchange interaction in the electric field.
Photo-Induced Spin Dynamics in Semiconductor Quantum Wells
Directory of Open Access Journals (Sweden)
Miah M
2009-01-01
Full Text Available Abstract We experimentally investigate the dynamics of spins in GaAs quantum wells under applied electric bias by photoluminescence (PL measurements excited with circularly polarized light. The bias-dependent circular polarization of PL (P PL with and without magnetic field is studied. TheP PLwithout magnetic field is found to be decayed with an enhancement of increasing the strength of the negative bias. However,P PLin a transverse magnetic field shows oscillations under an electric bias, indicating that the precession of electron spin occurs in quantum wells. The results are discussed based on the electron–hole exchange interaction in the electric field.
Yang, Fan; Liu, Ren-Bao
2013-03-01
Quantum evolution of particles under strong fields can be approximated by the quantum trajectories that satisfy the stationary phase condition in the Dirac-Feynmann path integrals. The quantum trajectories are the key concept to understand strong-field optics phenomena, such as high-order harmonic generation (HHG), above-threshold ionization (ATI), and high-order terahertz siedeband generation (HSG). The HSG in semiconductors may have a wealth of physics due to the possible nontrivial ``vacuum'' states of band materials. We find that in a spin-orbit-coupled semiconductor, the cyclic quantum trajectories of an electron-hole pair under a strong terahertz field accumulates nontrivial Berry phases. We study the monolayer MoS2 as a model system and find that the Berry phases are given by the Faraday rotation angles of the pulse emission from the material under short-pulse excitation. This result demonstrates an interesting Berry phase dependent effect in the extremely nonlinear optics of semiconductors. This work is supported by Hong Kong RGC/GRF 401512 and the CUHK Focused Investments Scheme.
Quantum transport in semiconductor nanostructures and nanoscale devices
International Nuclear Information System (INIS)
Zhen-Li, Ji.
1991-09-01
Only a decade ago the study and fabrication of electron devices whose smallest features were just under 1 micro represented the forefront of the field. Today that position has advanced an order of magnitude to 100 nanometers. Quantum effects are unavoidable in devices with dimensions smaller than 100 nanometers. A variety of quantum effects have been discovered over the years, such as tunneling, resonant tunneling, weak and strong localization, and the quantum Hall effect. Since 1985, experiments on nanostructures (dimension < 100 nm) have revealed a number of new effects such as the Aharanov-Bohm effect, conductance fluctuations, non-local effects and the quantized resistance of point contacts. For nanostructures at low temperature, these phenomena clearly show that electron transport is influenced by wave interference effects similar to those well-known in microwave and optical networks. New device concepts now being proposed and demonstrated are based on these wave properties. This thesis discusses our study of electron transport in nanostructures. All of the quantum phenomena that we address here are essentially one-electron phenomena, although many-body effects will sometimes play a more significant role in the electronic properties of small structures. Most of the experimental observations to date are particularly well explained, at least qualitatively, in terms of the simple one-particle picture. (au)
Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems
Lau, Wayne Heung
This thesis examines the electronic and optical properties of low-dimensional semiconductor systems. A theory is developed to study the electron-hole generation-recombination process of type-II semimetallic semiconductor heterojunctions based on a 3 x 3 k·p matrix Hamiltonian (three-band model) and an 8 x 8 k·p matrix Hamiltonian (eight-band model). A novel electron-hole generation and recombination process, which is called activationless generation-recombination process, is predicted. It is demonstrated that the current through the type-II semimetallic semiconductor heterojunctions is governed by the activationless electron-hole generation-recombination process at the heterointerfaces, and that the current-voltage characteristics are essentially linear. A qualitative agreement between theory and experiments is observed. The numerical results of the eight-band model are compared with those of the threeband model. Based on a lattice gas model, a theory is developed to study the influence of a random potential on the ionization equilibrium conditions for bound electron-hole pairs (excitons) in III--V semiconductor heterostructures. It is demonstrated that ionization equilibrium conditions for bound electron-hole pairs change drastically in the presence of strong disorder. It is predicted that strong disorder promotes dissociation of excitons in III--V semiconductor heterostructures. A theory of polariton (photon dressed by phonon) spontaneous emission in a III--V semiconductor doped with semiconductor quantum dots (QDs) or quantum wells (QWs) is developed. For the first time, superradiant and subradiant polariton spontaneous emission phenomena in a polariton-QD (QW) coupled system are predicted when the resonance energies of the two identical QDs (QWs) lie outside the polaritonic energy gap. It is also predicted that when the resonance energies of the two identical QDs (QWs) lie inside the polaritonic energy gap, spontaneous emission of polariton in the polariton
International Nuclear Information System (INIS)
Nevedomskiy, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhernskiy, V. V.; Putyato, M. A.; Semyagin, B. R.
2015-01-01
A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by low-temperature epitaxy which provides a large excess of arsenic in the epitaxial GaAs layer. During the growth of subsequent layers at a higher temperature, excess arsenic forms nanoinclusions, i.e., metal quantum dots in the GaAs matrix. The two-dimensional array of such metal quantum dots is created by the δ doping of a low-temperature GaAs layer with antimony which serves as a precursor for the heterogeneous nucleation of metal quantum dots and accumulates in them with the formation of AsSb metal alloy. The two-dimensional array of InAs semiconductor quantum dots is formed via the Stranski–Krastanov mechanism at the GaAs surface. Between the arrays of metal and semiconductor quantum dots, a 3-nm-thick AlAs barrier layer is grown. The total spacing between the arrays of metal and semiconductor quantum dots is 10 nm. Electron microscopy of the structure shows that the arrangement of metal quantum dots and semiconductor quantum dots in the two-dimensional arrays is spatially correlated. The spatial correlation is apparently caused by elastic strain and stress fields produced by both AsSb metal and InAs semiconductor quantum dots in the GaAs matrix
International Nuclear Information System (INIS)
Zhang Jun; Li Qian; Di Xiaowei; Liu Zhiliang; Xu Gang
2008-01-01
Multicolored semiconductor quantum dots have shown great promise for construction of miniaturized light-emitting diodes with compact size, low weight and cost, and high luminescent efficiency. The unique size-dependent luminescent property of quantum dots offers the feasibility of constructing single-color or full-color output light-emitting diodes with one type of material. In this paper, we have demonstrated the facile fabrication of blue-, green-, red- and full-color-emitting semiconductor quantum dot optical films via a layer-by-layer assembly technique. The optical films were constructed by alternative deposition of different colored quantum dots with a series of oppositely charged species, in particular, the new use of cationic starch on glass substrates. Semiconductor ZnSe quantum dots exhibiting blue emission were deposited for fabrication of blue-emitting optical films, while semiconductor CdTe quantum dots with green and red emission were utilized for construction of green- and red-emitting optical films. The assembly of integrated blue, green and red semiconductor quantum dots resulted in full-color-emitting optical films. The luminescent optical films showed very bright emitting colors under UV irradiation, and displayed dense, smooth and efficient luminous features, showing brighter luminescence in comparison with their corresponding quantum dot aqueous colloid solutions. The assembled optical films provide the prospect of miniaturized light-emitting-diode applications.
Quantum theory of terahertz conductivity of semiconductor nanostructures
Czech Academy of Sciences Publication Activity Database
Ostatnický, T.; Pushkarev, Vladimir; Němec, Hynek; Kužel, Petr
2018-01-01
Roč. 97, č. 8 (2018), s. 1-8, č. článku 085426. ISSN 2469-9950 R&D Projects: GA ČR GA17-03662S EU Projects: European Commission(XE) 607521 - NOTEDEV Institutional support: RVO:68378271 Keywords : nanostructures * nanoparticles * terahertz conductivity * quantum theory * linear response Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.836, year: 2016
Electron-electron scattering and mobilities in semiconductors and quantum wells
International Nuclear Information System (INIS)
Lyo, S.K.
1986-01-01
The effect of electron-electron scattering on the mobility in semiconductors and semiconductor quantum wells is examined. A general exact formula is derived for the mobility, when the electron-electron collision rate is much faster than other scattering rates such as those by ionized impurities and phonons. In this limit, the transport relaxation rate is independent of the carrier's energy and contributions to the inverse mobility from individual scattering mechanism add up. The mobility becomes significantly reduced from its value in the absence of electron-electron scattering. When the collision rates are not necessarily dominated by electron-electron scattering, the mobility is calculated by the Kohler-Sondheimer variational method in the presence of ionized-impurity scattering and acoustic-phonon scattering in a nondegenerate two-dimensional quantum well
Formation of strain-induced quantum dots in gated semiconductor nanostructures
Directory of Open Access Journals (Sweden)
Ted Thorbeck
2015-08-01
Full Text Available A long-standing mystery in the field of semiconductor quantum dots (QDs is: Why are there so many unintentional dots (also known as disorder dots which are neither expected nor controllable. It is typically assumed that these unintentional dots are due to charged defects, however the frequency and predictability of the location of the unintentional QDs suggests there might be additional mechanisms causing the unintentional QDs besides charged defects. We show that the typical strains in a semiconductor nanostructure from metal gates are large enough to create strain-induced quantum dots. We simulate a commonly used QD device architecture, metal gates on bulk silicon, and show the formation of strain-induced QDs. The strain-induced QD can be eliminated by replacing the metal gates with poly-silicon gates. Thus strain can be as important as electrostatics to QD device operation operation.
Few-Photon Model of the Optical Emission of Semiconductor Quantum Dots
Richter, Marten; Carmele, Alexander; Sitek, Anna; Knorr, Andreas
2009-08-01
The Jaynes-Cummings model provides a well established theoretical framework for single electron two level systems in a radiation field. Similar exactly solvable models for semiconductor light emitters such as quantum dots dominated by many particle interactions are not known. We access these systems by a generalized cluster expansion, the photon-probability cluster expansion: a reliable approach for few-photon dynamics in many body electron systems. As a first application, we discuss vacuum Rabi oscillations and show that their amplitude determines the number of electrons in the quantum dot.
Hot electron dynamics at semiconductor surfaces: Implications for quantum dot photovoltaics
Tisdale, William A., III
Finding a viable supply of clean, renewable energy is one of the most daunting challenges facing the world today. Solar cells have had limited impact in meeting this challenge because of their high cost and low power conversion efficiencies. Semiconductor nanocrystals, or quantum dots, are promising materials for use in novel solar cells because they can be processed with potentially inexpensive solution-based techniques and because they are predicted to have novel optoelectronic properties that could enable the realization of ultra-efficient solar power converters. However, there is a lack of fundamental understanding regarding the behavior of highly-excited, or "hot," charge carriers near quantum-dot and semiconductor interfaces, which is of paramount importance to the rational design of high-efficiency devices. The elucidation of these ultrafast hot electron dynamics is the central aim of this Dissertation. I present a theoretical framework for treating the electronic interactions between quantum dots and bulk semiconductor surfaces and propose a novel experimental technique, time-resolved surface second harmonic generation (TR-SHG), for probing these interactions. I then describe a series of experimental investigations into hot electron dynamics in specific quantum-dot/semiconductor systems. A two-photon photoelectron spectroscopy (2PPE) study of the technologically-relevant ZnO(1010) surface reveals ultrafast (sub-30fs) cooling of hot electrons in the bulk conduction band, which is due to strong electron-phonon coupling in this highly polar material. The presence of a continuum of defect states near the conduction band edge results in Fermi-level pinning and upward (n-type) band-bending at the (1010) surface and provides an alternate route for electronic relaxation. In monolayer films of colloidal PbSe quantum dots, chemical treatment with either hydrazine or 1,2-ethanedithiol results in strong and tunable electronic coupling between neighboring quantum dots
ABACUS and AQME: Semiconductor Device and Quantum Mechanics Education on nanoHUB.org
Klimeck, Gerhard; Vasileska, Dragica
2009-01-01
The ABACUS and AQME on-line tools and their associated wiki pages form one-stop shops for educators and students of existing university courses. They are geared towards courses like "introduction to Semiconductor Devices" and "Quantum Mechanics for Engineers". The service is free to anyone and no software installation is required on the user's computer. All simulations, including advanced visualization are performed at a remote computer. The tools have been deployed on nanoHUB.org in August 2...
Periodic dark pulse emission induced by delayed feedback in a quantum well semiconductor laser
Directory of Open Access Journals (Sweden)
L. Li
2012-12-01
Full Text Available We report the experimental observation of periodic dark pulse emission in a quantum-well semiconductor laser with delayed optical feedback. We found that under appropriate operation conditions the laser can also emit a stable train of dark pulses. The repetition frequency of the dark pulse is determined by the external cavity length. Splitting of the dark pulse was also observed. We speculate that the observed dark pulse is a kind of temporal cavity soliton formed in the laser.
Relaxation of electron energy in the coupled polar semiconductor quantum dots
Czech Academy of Sciences Publication Activity Database
Král, Karel; Khás, Zdeněk; Zdeněk, Petr; Čerňanský, Marian; Lin, C. Y.
2001-01-01
Roč. 49, 10-11 (2001), s. 1011-1018 ISSN 0015-8208 R&D Projects: GA AV ČR IAA1010113; GA MŠk OC P5.20 Institutional research plan: CEZ:AV0Z1010914 Keywords : coupled polar semiconductor quantum dots * electron energy relaxation Subject RIV: BE - The oretical Physics Impact factor: 1.043, year: 2001
Ordered Dissipative Structures in Exciton Systems in Semiconductor Quantum Wells
Directory of Open Access Journals (Sweden)
Andrey A. Chernyuk
2006-02-01
Full Text Available A phenomenological theory of exciton condensation in conditions of inhomogeneous excitation is proposed. The theory is applied to the study of the development of an exciton luminescence ring and the ring fragmentation at macroscopical distances from the central excitation spot in coupled quantum wells. The transition between the fragmented and the continuous ring is considered. With assumption of a defect in the structure, a possibility of a localized island of the condensed phase in a fixed position is shown. Exciton density distribution is also analyzed in the case of two spatially separated spots of the laser excitation.
Persistent current through a semiconductor quantum dot with Gaussian confinement
International Nuclear Information System (INIS)
Boyacioglu, Bahadir; Chatterjee, Ashok
2012-01-01
The persistent diamagnetic current in a GaAs quantum dot with Gaussian confinement is calculated. It is shown that except at very low temperature or at high temperature, the persistent current increases with decreasing temperature. It is also shown that as a function of the dot size, the diamagnetic current exhibits a maximum at a certain confinement length. It is furthermore shown that for a shallow potential, the persistent current shows an interesting maximum structure as a function of the depth of the potential. At low temperature, the peak structure is pretty sharp but becomes broader and broader with increasing temperature.
Second-harmonic scanning optical microscopy of semiconductor quantum dots
DEFF Research Database (Denmark)
Vohnsen, B.; Bozhevolnyi, S.I.; Pedersen, K.
2001-01-01
Second-harmonic (SH) optical imaging of self-assembled InAlGaAs quantum dots (QD's) grown on a GaAs(0 0 1) substrate has been accomplished at room temperature by use of respectively a scanning far-field optical microscope in reflection mode and a scanning near-field optical microscope...... in transmission mode. In both cases the SH signal peaks at a pump wavelength of similar to 885 nm in correspondence to the maximum in the photoluminescence spectrum of the QD sample. SH near-field optical images exhibit spatial signal variations on a subwavelength scale that depend on the pump wavelength. We...
Magneto-gyrotropic photogalvanic effects in semiconductor quantum wells
International Nuclear Information System (INIS)
Bel'kov, V V; Ganichev, S D; Ivchenko, E L; Tarasenko, S A; Weber, W; Giglberger, S; Olteanu, M; Tranitz, H-P; Danilov, S N; Schneider, Petra; Wegscheider, W; Weiss, D; Prettl, W
2005-01-01
We show that free-carrier (Drude) absorption of both polarized and unpolarized terahertz radiation in quantum well (QW) structures causes an electric photocurrent in the presence of an in-plane magnetic field. Experimental and theoretical analysis evidences that the observed photocurrents are spin dependent and related to the gyrotropy of the QWs. Microscopic models for the photogalvanic effects in QWs based on asymmetry of photoexcitation and relaxation processes are proposed. In most of the investigated structures the observed magneto-induced photocurrents are caused by spin-dependent relaxation of non-equilibrium carriers
Resonance fluorescence and electron spin in semiconductor quantum dots
Energy Technology Data Exchange (ETDEWEB)
Zhao, Yong
2009-11-18
The work presented in this dissertation contains the first observation of spin-resolved resonance fluorescence from a single quantum dot and its application of direct measurement of electron spin dynamics. The Mollow triplet and the Mollow quintuplet, which are the hallmarks of resonance fluorescence, are presented as the non-spin-resolved and spin-resolved resonance fluorescence spectrum, respectively. The negligible laser background contribution, the near pure radiative broadened spectrum and the anti-bunching photon statistics imply the sideband photons are background-free and near transform-limited single photons. This demonstration is a promising step towards the heralded single photon generation and electron spin readout. Instead of resolving spectrum, an alternative spin-readout scheme by counting resonance fluorescence photons under moderate laser power is demonstrated. The measurements of n-shot time-resolved resonance fluorescence readout are carried out to reveal electron spin dynamics of the measurement induced back action and the spin relaxation. Hyperfine interaction and heavy-light hole mixing are identified as the relevant mechanisms for the back action and phonon-assistant spin-orbit interaction dominates the spin relaxation. After a detailed discussion on charge-spin configurations in coupled quantum dots system, the single-shot readout on electron spin are proposed. (orig.)
Logical Qubit in a Linear Array of Semiconductor Quantum Dots
Directory of Open Access Journals (Sweden)
Cody Jones
2018-06-01
Full Text Available We design a logical qubit consisting of a linear array of quantum dots, we analyze error correction for this linear architecture, and we propose a sequence of experiments to demonstrate components of the logical qubit on near-term devices. To avoid the difficulty of fully controlling a two-dimensional array of dots, we adapt spin control and error correction to a one-dimensional line of silicon quantum dots. Control speed and efficiency are maintained via a scheme in which electron spin states are controlled globally using broadband microwave pulses for magnetic resonance, while two-qubit gates are provided by local electrical control of the exchange interaction between neighboring dots. Error correction with two-, three-, and four-qubit codes is adapted to a linear chain of qubits with nearest-neighbor gates. We estimate an error correction threshold of 10^{-4}. Furthermore, we describe a sequence of experiments to validate the methods on near-term devices starting from four coupled dots.
Resonance fluorescence and electron spin in semiconductor quantum dots
International Nuclear Information System (INIS)
Zhao, Yong
2009-01-01
The work presented in this dissertation contains the first observation of spin-resolved resonance fluorescence from a single quantum dot and its application of direct measurement of electron spin dynamics. The Mollow triplet and the Mollow quintuplet, which are the hallmarks of resonance fluorescence, are presented as the non-spin-resolved and spin-resolved resonance fluorescence spectrum, respectively. The negligible laser background contribution, the near pure radiative broadened spectrum and the anti-bunching photon statistics imply the sideband photons are background-free and near transform-limited single photons. This demonstration is a promising step towards the heralded single photon generation and electron spin readout. Instead of resolving spectrum, an alternative spin-readout scheme by counting resonance fluorescence photons under moderate laser power is demonstrated. The measurements of n-shot time-resolved resonance fluorescence readout are carried out to reveal electron spin dynamics of the measurement induced back action and the spin relaxation. Hyperfine interaction and heavy-light hole mixing are identified as the relevant mechanisms for the back action and phonon-assistant spin-orbit interaction dominates the spin relaxation. After a detailed discussion on charge-spin configurations in coupled quantum dots system, the single-shot readout on electron spin are proposed. (orig.)
Barrier penetration effects on thermopower in semiconductor quantum wells
International Nuclear Information System (INIS)
Vaidya, R. G.; Sankeshwar, N. S.; Mulimani, B. G.
2014-01-01
Finite confinement effects, due to the penetration of the electron wavefunction into the barriers of a square well potential, on the low–temperature acoustic-phonon-limited thermopower (TP) of 2DEG are investigated. The 2DEG is considered to be scattered by acoustic phonons via screened deformation potential and piezoelectric couplings. Incorporating the barrier penetration effects, the dependences of diffusion TP and phonon drag TP on barrier height are studied. An expression for phonon drag TP is obtained. Numerical calculations of temperature dependences of mobility and TP for a 10 nm InN/In x Ga 1−x N quantum well for different values of x show that the magnitude and behavior of TP are altered. A decrease in the barrier height from 500 meV by a factor of 5, enhances the mobility by 34% and reduces the TP by 58% at 20 K. Results are compared with those of infinite barrier approximation
Quantum theory of terahertz conductivity of semiconductor nanostructures
Ostatnický, T.; Pushkarev, V.; Němec, H.; Kužel, P.
2018-02-01
Efficient and controlled charge carrier transport through nanoelements is currently a primordial question in the research of nanoelectronic materials and structures. We develop a quantum-mechanical theory of the conductivity spectra of confined charge carriers responding to an electric field from dc regime up to optical frequencies. The broken translation symmetry induces a broadband drift-diffusion current, which is not taken into account in the analysis based on Kubo formula and relaxation time approximation. We show that this current is required to ensure that the dc conductivity of isolated nanostructures correctly attains zero. It causes a significant reshaping of the conductivity spectra up to terahertz or multiterahertz spectral ranges, where the electron scattering rate is typically comparable to or larger than the probing frequency.
Yamada, Minoru
2014-01-01
This book provides a unified and complete theory for semiconductor lasers, covering topics ranging from the principles of classical and quantum mechanics to highly advanced levels for readers who need to analyze the complicated operating characteristics generated in the real application of semiconductor lasers. The author conducts a theoretical analysis especially on the instabilities involved in the operation of semiconductor lasers. A density matrix into the theory for semiconductor lasers is introduced and the formulation of an improved rate equation to help understand the mode competition phenomena which cause the optical external feedback noise is thoroughly described from the basic quantum mechanics. The derivation of the improved rate equation will allow readers to extend the analysis for the different types of semiconductor materials and laser structures they deal with. This book is intended not only for students and academic researchers but also for engineers who develop lasers for the market, ...
Direct self-assembling and patterning of semiconductor quantum dots on transferable elastomer layer
Energy Technology Data Exchange (ETDEWEB)
Coppola, Sara [Institute of Applied Sciences and Intelligent System- CNR, Via Campi Flegrei 34, Pozzuoli, 80078 (Italy); Vespini, Veronica, E-mail: v.vespini@isasi.cnr.it [Institute of Applied Sciences and Intelligent System- CNR, Via Campi Flegrei 34, Pozzuoli, 80078 (Italy); Olivieri, Federico [Institute of Applied Sciences and Intelligent System- CNR, Via Campi Flegrei 34, Pozzuoli, 80078 (Italy); University of Naples Federico II, Department of Chemical Materials and Production Engineering, Piazzale Tecchio 80, Naples 80125 (Italy); Nasti, Giuseppe; Todino, Michele; Mandracchia, Biagio; Pagliarulo, Vito; Ferraro, Pietro [Institute of Applied Sciences and Intelligent System- CNR, Via Campi Flegrei 34, Pozzuoli, 80078 (Italy)
2017-03-31
Highlights: • A quantum dots self-patterning on micrometrical polymeric array is proposed. • The effect of a quantum dots mix on the array is evaluated. • A PDMS membrane is exploited to transfer the pattern on it. - Abstract: Functionalization of thin and stretchable polymer layers by nano- and micro-patterning of nanoparticles is a very promising field of research that can lead to many different applications in biology and nanotechnology. In this work, we present a new procedure to self-assemble semiconductor quantum dots (QDs) nanoparticles by a simple fabrication process on a freestanding flexible PolyDiMethylSiloxane (PDMS) membrane. We used a Periodically Poled Lithium Niobate (PPLN) crystal to imprint a micrometrical pattern on the PDMS membrane that drives the QDs self-structuring on its surface. This process allows patterning QDs with different wavelength emissions in a single step in order to tune the overall emission spectrum of the composite, tuning the QDs mixing ratio.
Hu, Gangyi; Wijesinghe, Udumbara; Naquin, Clint; Maggio, Ken; Edwards, H. L.; Lee, Mark
2017-10-01
Intrinsic gain (AV) measurements on Si quantum well (QW) n-channel metal-oxide-semiconductor (NMOS) transistors show that these devices can have |AV| > 1 in quantum transport negative transconductance (NTC) operation at room temperature. QW NMOS devices were fabricated using an industrial 45 nm technology node process incorporating ion implanted potential barriers to define a lateral QW in the conduction channel under the gate. While NTC at room temperature arising from transport through gate-controlled QW bound states has been previously established, it was unknown whether the quantum NTC mechanism could support gain magnitude exceeding unity. Bias conditions were found giving both positive and negative AV with |AV| > 1 at room temperature. This result means that QW NMOS devices could be useful in amplifier and oscillator applications.
One-dimensional quantum matter: gold-induced nanowires on semiconductor surfaces
Dudy, L.; Aulbach, J.; Wagner, T.; Schäfer, J.; Claessen, R.
2017-11-01
Interacting electrons confined to only one spatial dimension display a wide range of unusual many-body quantum phenomena, ranging from Peierls instabilities to the breakdown of the canonical Fermi liquid paradigm to even unusual spin phenomena. The underlying physics is not only of tremendous fundamental interest, but may also have bearing on device functionality in future micro- and nanoelectronics with lateral extensions reaching the atomic limit. Metallic adatoms deposited on semiconductor surfaces may form self-assembled atomic nanowires, thus representing highly interesting and well-controlled solid-state realizations of such 1D quantum systems. Here we review experimental and theoretical investigations on a few selected prototypical nanowire surface systems, specifically Ge(0 0 1)-Au and Si(hhk)-Au, and the search for 1D quantum states in them. We summarize the current state of research and identify open questions and issues.
Quantum-corrected drift-diffusion models for transport in semiconductor devices
International Nuclear Information System (INIS)
De Falco, Carlo; Gatti, Emilio; Lacaita, Andrea L.; Sacco, Riccardo
2005-01-01
In this paper, we propose a unified framework for Quantum-corrected drift-diffusion (QCDD) models in nanoscale semiconductor device simulation. QCDD models are presented as a suitable generalization of the classical drift-diffusion (DD) system, each particular model being identified by the constitutive relation for the quantum-correction to the electric potential. We examine two special, and relevant, examples of QCDD models; the first one is the modified DD model named Schroedinger-Poisson-drift-diffusion, and the second one is the quantum-drift-diffusion (QDD) model. For the decoupled solution of the two models, we introduce a functional iteration technique that extends the classical Gummel algorithm widely used in the iterative solution of the DD system. We discuss the finite element discretization of the various differential subsystems, with special emphasis on their stability properties, and illustrate the performance of the proposed algorithms and models on the numerical simulation of nanoscale devices in two spatial dimensions
Control of the spin geometric phase in semiconductor quantum rings.
Nagasawa, Fumiya; Frustaglia, Diego; Saarikoski, Henri; Richter, Klaus; Nitta, Junsaku
2013-01-01
Since the formulation of the geometric phase by Berry, its relevance has been demonstrated in a large variety of physical systems. However, a geometric phase of the most fundamental spin-1/2 system, the electron spin, has not been observed directly and controlled independently from dynamical phases. Here we report experimental evidence on the manipulation of an electron spin through a purely geometric effect in an InGaAs-based quantum ring with Rashba spin-orbit coupling. By applying an in-plane magnetic field, a phase shift of the Aharonov-Casher interference pattern towards the small spin-orbit-coupling regions is observed. A perturbation theory for a one-dimensional Rashba ring under small in-plane fields reveals that the phase shift originates exclusively from the modulation of a pure geometric-phase component of the electron spin beyond the adiabatic limit, independently from dynamical phases. The phase shift is well reproduced by implementing two independent approaches, that is, perturbation theory and non-perturbative transport simulations.
International Nuclear Information System (INIS)
Zeba, I.; Yahia, M.E.; Shukla, P.K.; Moslem, W.M.
2012-01-01
The electron–hole two-stream instability in a quantum semiconductor plasma has been studied including electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures of the plasma species. Typical values of GaAs and GaSb semiconductors are used to estimate the growth rate of the two-stream instability. The effects of electron– and hole–phonon collision, quantum recoil effects, the streaming velocities, and the corresponding threshold on the growth rate are investigated numerically. Considering the phonon susceptibility allows the acoustic mode to exist and the collisional instability arises in combination with drift of the holes. -- Highlights: ► Electron–hole two stream instability in quantum plasmas is presented. ► Typical values of GaAs and GaSb semiconductors are used to estimate the growth rate. ► The streaming velocities and the corresponding threshold on the growth rate are investigated numerically.
International Nuclear Information System (INIS)
Zhao, Peiji; Horing, Norman J.M.; Woolard, Dwight L.; Cui, H.L.
2003-01-01
We present a nonequilibrium Green's function formulation of many-body quantum transport theory for multi-band semiconductor systems with a phonon bath. The equations are expressed exactly in terms of single particle nonequilibrium Green's functions and self-energies, treating the open electron-hole system in weak interaction with the bath. A decoupling technique is employed to separate the individual band Green's function equations of motion from one another, with the band-band interaction effects embedded in ''cross-band'' self-energies. This nonequilibrium Green's function formulation of quantum transport theory is amenable to solution by parallel computing because of its formal decoupling with respect to inter-band interactions. Moreover, this formulation also permits coding the simulator of an n-band semiconductor in terms of that for an (n-1)-band system, in step with the current tendency and development of programming technology. Finally, the focus of these equations on individual bands provides a relatively direct route for the determination of carrier motion in energy bands, and to delineate the influence of intra- and inter-band interactions. A detailed description is provided for three-band semiconductor systems
Emergence of the persistent spin helix in semiconductor quantum wells
International Nuclear Information System (INIS)
Koralek, Jake; Weber, Chris; Orenstein, Joe; Bernevig, Andrei; Zhang, Shoucheng; Mack, Shawn; Awschalom, David
2008-01-01
According to Noether's theorem, for every symmetry in nature there is a corresponding conservation law. For example, invariance with respect to spatial translation corresponds to conservation of momentum. In another well-known example, invariance with respect to rotation of the electron's spin, or SU(2) symmetry, leads to conservation of spin polarization. For electrons in a solid, this symmetry is ordinarily broken by spin-orbit (SO) coupling, allowing spin angular momentum to flow to orbital angular momentum. However, it has recently been predicted that SU(2) can be recovered in a two-dimensional electron gas (2DEG), despite the presence of SO coupling. The corresponding conserved quantities include the amplitude and phase of a helical spin density wave termed the 'persistent spin helix' (PSH) .2 SU(2) is restored, in principle, when the strength of two dominant SO interactions, the Rashba (alpha) and linear Dresselhaus (beta 1), are equal. This symmetry is predicted to be robust against all forms of spin-independent scattering, including electron-electron interactions, but is broken by the cubic Dresselhaus term (beta 3) and spin-dependent scattering. When these terms are negligible, the distance over which spin information can propagate is predicted to diverge as alpha approaches beta 1. Here we observe experimentally the emergence of the PSH in GaAs quantum wells (QW's) by independently tuning alpha and beta 1. Using transient spin-grating spectroscopy (TSG), we find a spin-lifetime enhancement of two orders of magnitude near the symmetry point. Excellent quantitative agreement with theory across a wide range of sample parameters allows us to obtain an absolute measure of all relevant SO terms, identifying beta 3 as the main SU(2) violating term in our samples. The tunable suppression of spin-relaxation demonstrated in this work is well-suited for application to spintronics
Emergence of the Persistent Spin Helix in Semiconductor Quantum Wells
International Nuclear Information System (INIS)
Koralek, Jake
2011-01-01
According to Noether's theorem, for every symmetry in nature there is a corresponding conservation law. For example, invariance with respect to spatial translation corresponds to conservation of momentum. In another well-known example, invariance with respect to rotation of the electron's spin, or SU(2) symmetry, leads to conservation of spin polarization. For electrons in a solid, this symmetry is ordinarily broken by spin-orbit (SO) coupling, allowing spin angular momentum to flow to orbital angular momentum. However, it has recently been predicted that SU(2) can be recovered in a two-dimensional electron gas (2DEG), despite the presence of SO coupling. The corresponding conserved quantities include the amplitude and phase of a helical spin density wave termed the 'persistent spin helix' (PSH). SU(2) is restored, in principle, when the strength of two dominant SO interactions, the Rashba (α) and linear Dresselhaus (β 1 ), are equal. This symmetry is predicted to be robust against all forms of spin-independent scattering, including electron-electron interactions, but is broken by the cubic Dresselhaus term (β 3 ) and spin-dependent scattering. When these terms are negligible, the distance over which spin information can propagate is predicted to diverge as α → β 1 . Here we observe experimentally the emergence of the PSH in GaAs quantum wells (QW's) by independently tuning α and β 1 . Using transient spin-grating spectroscopy (TSG), we find a spin-lifetime enhancement of two orders of magnitude near the symmetry point. Excellent quantitative agreement with theory across a wide range of sample parameters allows us to obtain an absolute measure of all relevant SO terms, identifying β 3 as the main SU(2) violating term in our samples. The tunable suppression of spin-relaxation demonstrated in this work is well-suited for application to spintronics.
Magneto-Gyrotropic Photogalvanic Effects in Semiconductor Quantum Wells
Ganichev, S. D.
The spin-orbit coupling provides a versatile tool to generate and to manipulate the spin degree of freedom in low-dimensional semiconductor structures. The spin Hall effect, where an electric current drives a transverse spin current and causes a nonequilibrium spin accumulation near the sample boundary,1,2 the spin-galvanic effect, where a nonequilibrium spin polarization drives an electric current3,4 or the reverse process, in which an electrical current generates a non-equilibrium spin-polarization,5-9 are all consequences of spin-orbit coupling. In order to observe a spin Hall effect a bias driven current is an essential prerequisite. Then spin separation is caused via spin-orbit coupling either by Mott scattering (extrinsic spin Hall effect) or by spin splitting of the band structure (intrinsic spin Hall effect). Recently an elementary effect causing spin separation which is fundamentally different from that of the spin Hall effect has been observed.10 In contrast to the spin Hall effect it does not require an electric current to flow: it is spin separation achieved by spin-dependent scattering of electrons in media with suitable symmetry. It is show that by free carrier (Drude) absorption of terahertz radiation spin separation is achieved in a wide range of temperatures from liquid helium temperature up to room temperature. Moreover the experimental results demonstrate that simple electron gas heating by any means is already sufficient to yield spin separation due to spin-dependent energy relaxation processes of non-equilibrium carriers. In order to demonstrate the existence of the spin separation due to asymmetric scattering the pure spin current was converted into an electric current. It is achieved by application of a magnetic field which polarizes spins. This is analogues to spin-dependent scattering in transport experiments: spin-dependent scattering in an unpolarized electron gas causes the extrinsic spin Hall effect, whereas in a spin-polarized electron
Critical strain region evaluation of self-assembled semiconductor quantum dots
Energy Technology Data Exchange (ETDEWEB)
Sales, D L [Departamento de Ciencia de los Materiales e I. M. y Q. I., Universidad de Cadiz, Puerto Real, Cadiz (Spain); Pizarro, J [Departamento de Lenguajes y Sistemas Informaticos, Universidad de Cadiz, Puerto Real, Cadiz (Spain); Galindo, P L [Departamento de Lenguajes y Sistemas Informaticos, Universidad de Cadiz, Puerto Real, Cadiz (Spain); Garcia, R [Departamento de Ciencia de los Materiales e I. M. y Q. I., Universidad de Cadiz, Puerto Real, Cadiz (Spain); Trevisi, G [CNR-IMEM Institute, Parco delle Scienze 37a, 43100, Parma (Italy); Frigeri, P [CNR-IMEM Institute, Parco delle Scienze 37a, 43100, Parma (Italy); Nasi, L [CNR-IMEM Institute, Parco delle Scienze 37a, 43100, Parma (Italy); Franchi, S [CNR-IMEM Institute, Parco delle Scienze 37a, 43100, Parma (Italy); Molina, S I [Departamento de Ciencia de los Materiales e I. M. y Q. I., Universidad de Cadiz, Puerto Real, Cadiz (Spain)
2007-11-28
A novel peak finding method to map the strain from high resolution transmission electron micrographs, known as the Peak Pairs method, has been applied to In(Ga)As/AlGaAs quantum dot (QD) samples, which present stacking faults emerging from the QD edges. Moreover, strain distribution has been simulated by the finite element method applying the elastic theory on a 3D QD model. The agreement existing between determined and simulated strain values reveals that these techniques are consistent enough to qualitatively characterize the strain distribution of nanostructured materials. The correct application of both methods allows the localization of critical strain zones in semiconductor QDs, predicting the nucleation of defects, and being a very useful tool for the design of semiconductor devices.
Energy Technology Data Exchange (ETDEWEB)
Bodunov, Evgeny N. [Department of Physics, Petersburg State Transport University, St. Petersburg (Russian Federation); Danilov, Vladimir V. [Department of Physics, Petersburg State Transport University, St. Petersburg (Russian Federation); Vavilov State Optical Institute, St. Petersburg (Russian Federation); Panfutova, Anastasia S. [Vavilov State Optical Institute, St. Petersburg (Russian Federation); Simoes Gamboa, A.L. [Center of Information Optical Technologies, ITMO University, St. Petersburg (Russian Federation)
2016-04-15
While time-resolved luminescence spectroscopy is commonly used as a quantitative tool for the analysis of the dynamics of photoexcitation in colloidal semiconductor quantum dots, the interpretation of the virtually ubiquitous nonexponential decay profiles is frequently ambiguous, because the assumption of multiple discrete exponential components with distinct lifetimes for resolving the decays is often arbitrary. Here, an interpretation of the room-temperature luminescence decay of CdSe/ZnS semiconductor quantum dots in colloidal solutions is presented based on the Kohlrausch relaxation function. It is proposed that the decay can be understood by using the concept of Foerster resonance energy transfer (FRET) assuming that the role of acceptors of photoexcitation energy is played by high-frequency anharmonic molecular vibrations in the environment of the quantum dots. The term EVFRET (Electronic - Vibrational Foerster Resonance Energy Transfer) is introduced in order to unequivocally refer to this energy transfer process. (copyright 2016 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Toxicological studies of semiconductor quantum dots on immune cells.
Energy Technology Data Exchange (ETDEWEB)
Ricken, James Bryce; Rios, Lynette; Poschet, Jens Fredrich; Bachand, Marlene; Bachand, George David; Greene, Adrienne Celeste; Carroll-Portillo, Amanda
2008-11-01
Nanoengineered materials hold a vast promise of enabling revolutionary technologies, but also pose an emerging and potentially serious threat to human and environmental health. While there is increasing knowledge concerning the risks posed by engineered nanomaterials, significant inconsistencies exist within the current data based on the high degree of variability in the materials (e.g., synthesis method, coatings, etc) and biological test systems (e.g., cell lines, whole organism, etc). In this project, we evaluated the uptake and response of two immune cell lines (RAW macrophage and RBL mast cells) to nanocrystal quantum dots (Qdots) with different sizes and surface chemistries, and at different concentrations. The basic experimental design followed a 2 x 2 x 3 factorial model: two Qdot sizes (Qdot 520 and 620), two surface chemistries (amine 'NH{sub 2}' and carboxylic acid 'COOH'), and three concentrations (0, 1 nM, and 1 {micro}M). Based on this design, the following Qdots from Evident Technologies were used for all experiments: Qdot 520-COOH, Qdot 520-NH{sub 2}, Qdot 620-COOH, and Qdot 620-NH{sub 2}. Fluorescence and confocal imaging demonstrated that Qdot 620-COOH and Qdot 620-NH{sub 2} nanoparticles had a greater level of internalization and cell membrane association in RAW and RBL cells, respectively. From these data, a two-way interaction between Qdot size and concentration was observed in relation to the level of cellular uptake in RAW cells, and association with RBL cell membranes. Toxicity of both RBL and RAW cells was also significantly dependent on the interaction of Qdot size and concentration; the 1 {micro}M concentrations of the larger, Qdot 620 nanoparticles induced a greater toxic effect on both cell lines. The RBL data also demonstrate that Qdot exposure can induce significant toxicity independent of cellular uptake. A significant increase in TNF-{alpha} and decrease in IL-10 release was observed in RAW cells, and suggested
Gaudreau, Louis; Bogan, Alex; Korkusinski, Marek; Studenikin, Sergei; Austing, D. Guy; Sachrajda, Andrew S.
2017-09-01
Long distance entanglement distribution is an important problem for quantum information technologies to solve. Current optical schemes are known to have fundamental limitations. A coherent photon-to-spin interface built with quantum dots (QDs) in a direct bandgap semiconductor can provide a solution for efficient entanglement distribution. QD circuits offer integrated spin processing for full Bell state measurement (BSM) analysis and spin quantum memory. Crucially the photo-generated spins can be heralded by non-destructive charge detection techniques. We review current schemes to transfer a polarization-encoded state or a time-bin-encoded state of a photon to the state of a spin in a QD. The spin may be that of an electron or that of a hole. We describe adaptations of the original schemes to employ heavy holes which have a number of attractive properties including a g-factor that is tunable to zero for QDs in an appropriately oriented external magnetic field. We also introduce simple throughput scaling models to demonstrate the potential performance advantage of full BSM capability in a QD scheme, even when the quantum memory is imperfect, over optical schemes relying on linear optical elements and ensemble quantum memories.
High speed all optical logic gates based on quantum dot semiconductor optical amplifiers.
Ma, Shaozhen; Chen, Zhe; Sun, Hongzhi; Dutta, Niloy K
2010-03-29
A scheme to realize all-optical Boolean logic functions AND, XOR and NOT using semiconductor optical amplifiers with quantum-dot active layers is studied. nonlinear dynamics including carrier heating and spectral hole-burning are taken into account together with the rate equations scheme. Results show with QD excited state and wetting layer serving as dual-reservoir of carriers, as well as the ultra fast carrier relaxation of the QD device, this scheme is suitable for high speed Boolean logic operations. Logic operation can be carried out up to speed of 250 Gb/s.
Optical Resonance of A Three-Level System in Semiconductor Quantum Dots
Directory of Open Access Journals (Sweden)
Nguyen Van Hieu
2017-11-01
Full Text Available The optical resonance of a three-level system of the strongly correlated electrons in the twolevel semiconductor quantum dot interacting with the linearly polarized monochromatic electromagnetic radiation is studied. With the application of the Green function method the expressions of the state vectors and the energies of the stationary states of the system in the regime of the optical resonance are derived. The Rabi oscillations of the electron populations at different levels as well as the Rabi splitting of the peaks in the photon emission spectra are investigated. PACS numbers: 71.35.-y, 78.55.-m, 78.67.Hc
Electron Raman scattering in semiconductor quantum wire in an external magnetic field
International Nuclear Information System (INIS)
Betancourt-Riera, Ri; Nieto Jalil, J M; Riera, R; Betancourt-Riera, Re; Rosas, R
2008-01-01
The differential cross-section for an electron Raman scattering process in a semiconductor quantum wire in the presence of an external magnetic field perpendicular to the plane of confinement is calculated. We assume a single parabolic conduction band. The emission spectra for different scattering configurations and the selection rules for the processes are studied. Singularities in the spectra are found and interpreted. The electron Raman scattering studied here can be used to provide direct information about the electron band and subband structure of these confinement systems. The magnetic field distribution is considered constant with value B 0 inside the wire and zero outside
Pressure study on the semiconductor-metal transition in a quantum well
Energy Technology Data Exchange (ETDEWEB)
Nithiananthi, P.; Jayakumar, K. [Department of Physics, Gandhigram Rural University, Tamilnadu (India)
2009-06-15
The effect of {gamma}-X band crossing due to the applied hydrostatic pressure on the semiconductor-metal transition in a quasi-two-dimensional system like GaAs/Al{sub x}Ga{sub 1-x}As quantum well has been shown through the drastic change in diamagnetic susceptibility of donors at critical concentration in the effective mass approximation using the variational principle. The nonparabolicity of the conduction band has been taken into account in the calculation. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
One phonon resonant Raman scattering in semiconductor quantum wires: Magnetic field effect
Energy Technology Data Exchange (ETDEWEB)
Betancourt-Riera, Re., E-mail: rbriera@posgrado.cifus.uson.mx [Instituto Tecnologico de Hermosillo, Avenida Tecnologico S/N, Colonia Sahuaro, C.P. 83170, Hermosillo, Sonor, (Mexico); Departamento de Investigacion en Fisica, Universidad de Sonora, Apartado Postal 5-088, C.P. 83190, Hermosillo, Sonora (Mexico); Betancourt-Riera, Ri. [Instituto Tecnologico de Hermosillo, Avenida Tecnologico S/N, Colonia Sahuaro, C.P. 83170, Hermosillo, Sonora (Mexico); Nieto Jalil, J.M. [Tecnologico de Monterrey-Campus Sonora Norte, Bulevar Enrique Mazon Lopez No. 965, C.P. 83000, Hermosillo, Sonora (Mexico); Riera, R. [Departamento de Investigacion en Fisica, Universidad de Sonora, Apartado Postal 5-088, C.P. 83190, Hermosillo, Sonora (Mexico)
2013-02-01
We have developed a theory of one phonon resonant Raman scattering in a semiconductor quantum wire of cylindrical geometry in the presence of an external magnetic field distribution, parallel to the cylinder axis. The effect of the magnetic field in the electron and hole states, and in the Raman scattering efficiency, is determinate. We consider the electron-phonon interaction using a Froehlich-type Hamiltonian, deduced for the case of complete confinement phonon modes by Comas and his collaborators. We also assume T=0 K, a single parabolic conduction and valence bands. The spectra are discussed for different magnetic field values and the selection rules for the processes are also studied.
Quantum Wells, Wires and Dots Theoretical and Computational Physics of Semiconductor Nanostructures
Harrison, Paul
2011-01-01
Quantum Wells, Wires and Dots, 3rd Edition is aimed at providing all the essential information, both theoretical and computational, in order that the reader can, starting from essentially nothing, understand how the electronic, optical and transport properties of semiconductor heterostructures are calculated. Completely revised and updated, this text is designed to lead the reader through a series of simple theoretical and computational implementations, and slowly build from solid foundations, to a level where the reader can begin to initiate theoretical investigations or explanations of their
Entangling quantum-logic gate operated with an ultrabright semiconductor single-photon source.
Gazzano, O; Almeida, M P; Nowak, A K; Portalupi, S L; Lemaître, A; Sagnes, I; White, A G; Senellart, P
2013-06-21
We demonstrate the unambiguous entangling operation of a photonic quantum-logic gate driven by an ultrabright solid-state single-photon source. Indistinguishable single photons emitted by a single semiconductor quantum dot in a micropillar optical cavity are used as target and control qubits. For a source brightness of 0.56 photons per pulse, the measured truth table has an overlap with the ideal case of 68.4±0.5%, increasing to 73.0±1.6% for a source brightness of 0.17 photons per pulse. The gate is entangling: At a source brightness of 0.48, the Bell-state fidelity is above the entangling threshold of 50% and reaches 71.0±3.6% for a source brightness of 0.15.
Electromagnetic pulse-driven spin-dependent currents in semiconductor quantum rings.
Zhu, Zhen-Gang; Berakdar, Jamal
2009-04-08
We investigate the non-equilibrium charge and spin-dependent currents in a quantum ring with a Rashba spin-orbit interaction (SOI) driven by two asymmetric picosecond electromagnetic pulses. The equilibrium persistent charge and persistent spin-dependent currents are investigated as well. It is shown that the dynamical charge and the dynamical spin-dependent currents vary smoothly with a static external magnetic flux and the SOI provides a SU(2) effective flux that changes the phases of the dynamic charge and the dynamic spin-dependent currents. The period of the oscillation of the total charge current with the delay time between the pulses is larger in a quantum ring with a larger radius. The parameters of the pulse fields control to a certain extent the total charge and the total spin-dependent currents. The calculations are applicable to nanometre rings fabricated in heterojunctions of III-V and II-VI semiconductors containing several hundreds of electrons.
Effect of the depolarization field on coherent optical properties in semiconductor quantum dots
Mitsumori, Yasuyoshi; Watanabe, Shunta; Asakura, Kenta; Seki, Keisuke; Edamatsu, Keiichi; Akahane, Kouichi; Yamamoto, Naokatsu
2018-06-01
We study the photon echo spectrum of self-assembled semiconductor quantum dots using femtosecond light pulses. The spectrum shape changes from a single-peaked to a double-peaked structure as the time delay between the two excitation pulses is increased. The spectrum change is reproduced by numerical calculations, which include the depolarization field induced by the biexciton-exciton transition as well as the conventional local-field effect for the exciton-ground-state transition in a quantum dot. Our findings suggest that various optical transitions in tightly localized systems generate a depolarization field, which renormalizes the resonant frequency with a change in the polarization itself, leading to unique optical properties.
International Nuclear Information System (INIS)
Chuang, Chi-Hung; Burda, Clemens; Chen, Xiaobo
2013-01-01
Using femtosecond transient absorption spectroscopy, we investigated hot carrier distributions in semiconductor cadmium selenide quantum dots. The relaxation processes represent the behavior of an ensemble of QDs. This concept is applied for analysis with the Fermi-Dirac distribution and relaxation processes among different electron-hole pair states. By extracting the experimental hot carrier distribution and fitting with the Fermi-Dirac function, we resolved the rapid thermalization processes, such as carrier-carrier and carrier-phonon interactions was resolved within one picosecond upon photoexcitation. The analysis, using the Fermi-Dirac distribution modulated by the density of states, provides a general route to understanding the carrier cooling and heat dissipation processes in quantum dot-based systems. (copyright 2012 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Analytical model of ground-state lasing phenomenon in broadband semiconductor quantum dot lasers
Korenev, Vladimir V.; Savelyev, Artem V.; Zhukov, Alexey E.; Omelchenko, Alexander V.; Maximov, Mikhail V.
2013-05-01
We introduce an analytical approach to the description of broadband lasing spectra of semiconductor quantum dot lasers emitting via ground-state optical transitions of quantum dots. The explicit analytical expressions describing the shape and the width of lasing spectra as well as their temperature and injection current dependences are obtained in the case of low homogeneous broadening. It is shown that in this case these dependences are determined by only two dimensionless parameters, which are the dispersion of the distribution of QDs over the energy normalized to the temperature and loss-to-maximum gain ratio. The possibility of optimization of laser's active region size and structure by using the intentionally introduced disorder is also carefully considered.
DEFF Research Database (Denmark)
Uskov, Alexander V.; Berg, Tommy Winther; Mørk, Jesper
2004-01-01
A theory for pulse amplification and saturation in quantum dot (QD) semiconductor optical amplifiers (SOAs) is developed. In particular, the maximum bit rate at which a data stream of pulses can be amplified without significant patterning effects is investigated. Simple expressions are derived th...... energies of 0.2–0.4 pJ. The superiority of QD SOAs is based on: 1) the faster achievement of the regime of maximum gain in QD SOAs compared to QW and bulk SOAs and 2) the lower effective cross section of photon-carrier interaction in QDs....... that clearly show the dependence of the maximum bit rate on material and device parameters. A comparative analysis of QD, quantum well (QW), and bulk SOAs shows that QD SOAs may have superior properties; calculations predict patterning-free amplification up to bit rates of 150–200 Gb/s with pulse output...
Open quantum spin systems in semiconductor quantum dots and atoms in optical lattices
Energy Technology Data Exchange (ETDEWEB)
Schwager, Heike
2012-07-04
In this Thesis, we study open quantum spin systems from different perspectives. The first part is motivated by technological challenges of quantum computation. An important building block for quantum computation and quantum communication networks is an interface between material qubits for storage and data processing and travelling photonic qubits for communication. We propose the realisation of a quantum interface between a travelling-wave light field and the nuclear spins in a quantum dot strongly coupled to a cavity. Our scheme is robust against cavity decay as it uses the decay of the cavity to achieve the coupling between nuclear spins and the travelling-wave light fields. A prerequiste for such a quantum interface is a highly polarized ensemble of nuclear spins. High polarization of the nuclear spin ensemble is moreover highly desirable as it protects the potential electron spin qubit from decoherence. Here we present the theoretical description of an experiment in which highly asymmetric dynamic nuclear spin pumping is observed in a single self-assembled InGaAs quantum dot. The second part of this Thesis is devoted to fundamental studies of dissipative spin systems. We study general one-dimensional spin chains under dissipation and propose a scheme to realize a quantum spin system using ultracold atoms in an optical lattice in which both coherent interaction and dissipation can be engineered and controlled. This system enables the study of non-equilibrium and steady state physics of open and driven spin systems. We find, that the steady state expectation values of different spin models exhibit discontinuous behaviour at degeneracy points of the Hamiltonian in the limit of weak dissipation. This effect can be used to dissipatively probe the spectrum of the Hamiltonian. We moreover study spin models under the aspect of state preparation and show that dissipation drives certain spin models into highly entangled state. Finally, we study a spin chain with
Open quantum spin systems in semiconductor quantum dots and atoms in optical lattices
International Nuclear Information System (INIS)
Schwager, Heike
2012-01-01
In this Thesis, we study open quantum spin systems from different perspectives. The first part is motivated by technological challenges of quantum computation. An important building block for quantum computation and quantum communication networks is an interface between material qubits for storage and data processing and travelling photonic qubits for communication. We propose the realisation of a quantum interface between a travelling-wave light field and the nuclear spins in a quantum dot strongly coupled to a cavity. Our scheme is robust against cavity decay as it uses the decay of the cavity to achieve the coupling between nuclear spins and the travelling-wave light fields. A prerequiste for such a quantum interface is a highly polarized ensemble of nuclear spins. High polarization of the nuclear spin ensemble is moreover highly desirable as it protects the potential electron spin qubit from decoherence. Here we present the theoretical description of an experiment in which highly asymmetric dynamic nuclear spin pumping is observed in a single self-assembled InGaAs quantum dot. The second part of this Thesis is devoted to fundamental studies of dissipative spin systems. We study general one-dimensional spin chains under dissipation and propose a scheme to realize a quantum spin system using ultracold atoms in an optical lattice in which both coherent interaction and dissipation can be engineered and controlled. This system enables the study of non-equilibrium and steady state physics of open and driven spin systems. We find, that the steady state expectation values of different spin models exhibit discontinuous behaviour at degeneracy points of the Hamiltonian in the limit of weak dissipation. This effect can be used to dissipatively probe the spectrum of the Hamiltonian. We moreover study spin models under the aspect of state preparation and show that dissipation drives certain spin models into highly entangled state. Finally, we study a spin chain with
InGaAs Quantum Dots on Cross-Hatch Patterns as a Host for Diluted Magnetic Semiconductor Medium
Directory of Open Access Journals (Sweden)
Teeravat Limwongse
2013-01-01
Full Text Available Storage density on magnetic medium is increasing at an exponential rate. The magnetic region that stores one bit of information is correspondingly decreasing in size and will ultimately reach quantum dimensions. Magnetic quantum dots (QDs can be grown using semiconductor as a host and magnetic constituents added to give them magnetic properties. Our results show how molecular beam epitaxy and, particularly, lattice-mismatched heteroepitaxy can be used to form laterally aligned, high-density semiconducting host in a single growth run without any use of lithography or etching. Representative results of how semiconductor QD hosts arrange themselves on various stripes and cross-hatch patterns are reported.
Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser
Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song
2018-01-01
We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.
Alvaro, M; Bonilla, L L; Carretero, M; Melnik, R V N; Prabhakar, S
2013-08-21
In this paper we develop a kinetic model for the analysis of semiconductor superlattices, accounting for quantum effects. The model consists of a Boltzmann-Poisson type system of equations with simplified Bhatnagar-Gross-Krook collisions, obtained from the general time-dependent Schrödinger-Poisson model using Wigner functions. This system for superlattice transport is supplemented by the quantum mechanical part of the model based on the Ben-Daniel-Duke form of the Schrödinger equation for a cylindrical superlattice of finite radius. The resulting energy spectrum is used to characterize the Fermi-Dirac distribution that appears in the Bhatnagar-Gross-Krook collision, thereby coupling the quantum mechanical and kinetic parts of the model. The kinetic model uses the dispersion relation obtained by the generalized Kronig-Penney method, and allows us to estimate radii of quantum wire superlattices that have the same miniband widths as in experiments. It also allows us to determine more accurately the time-dependent characteristics of superlattices, in particular their current density. Results, for several experimentally grown superlattices, are discussed in the context of self-sustained coherent oscillations of the current density which are important in an increasing range of current and potential applications.
Infrared detectors and emitters on the basis of semiconductor quantum structures
International Nuclear Information System (INIS)
Kruck, P. R.
1997-08-01
Intersubband transitions in Si/SiGe and GaAs/AlGaAs semiconductor quantum structures have been investigated with respect to possible application as infrared detectors and emitters. Investigation of the polarization dependence of subband absorption in Si/SiGe quantum wells shows both transverse magnetic and transverse electric polarized excitations. Intersubband transitions to several excited states are identified by comparison with self-consistent Luttinger-Kohn type calculations. On the basis of these investigations a quantum well infrared photodetector operating between 3 and 8 μm with a detectivity as high as D*=2 x 10 10 cm Hz 1/2 W -1 under normal incidence illumination and at an operating temperature of T=77K is realized. The polarization dependence of the photoconductivity shows the importance of both the absorption and the vertical transport properties of the photoexcited carriers for the detection mechanism. On the basis of the GaAs/AlGaAs material system a unipolar quantum cascade light emitting diode (LED) has been realized. The LED operates at a wavelength of 6.9 μm. A detailed analysis of the electroluminescence spectra shows a linewidth as narrow as 14 meV at cryogenic temperatures, increasing to 20 meV at room temperature. For typical drive-current densities of 1 kA/cm 2 the optical output power lies in the ten nanowatt range. (author)
Self-consistent electronic structure of spin-polarized dilute magnetic semiconductor quantum wells
International Nuclear Information System (INIS)
Hong, S. P.; Yi, K. S.; Quinn, J. J.
2000-01-01
The electronic properties of spin-symmetry-broken dilute magnetic semiconductor quantum wells are investigated self-consistently at zero temperature. The spin-split subband structure and carrier concentration of modulation-doped quantum wells are examined in the presence of a strong magnetic field. The effects of exchange and correlations of electrons are included in a local-spin-density-functional approximation. We demonstrate that exchange correlation of electrons decreases the spin-split subband energy but enhances the carrier density in a spin-polarized quantum well. We also observe that as the magnetic field increases, the concentration of spin-down (majority) electrons increases but that of spin-up (minority) electrons decreases. The effect of orbital quantization on the in-plane motion of electrons is also examined and shows a sawtoothlike variation in subband electron concentrations as the magnetic-field intensity increases. The latter variation is attributed to the presence of ionized donors acting as the electron reservoir, which is partially responsible for the formation of the integer quantum Hall plateaus. (c) 2000 The American Physical Society
Narang, Prineha
This thesis puts forth a theory-directed approach coupled with spectroscopy aimed at the discovery and understanding of light-matter interactions in semiconductors and metals. The first part of the thesis presents the discovery and development of Zn-IV nitride materials. The commercial prominence in the optoelectronics industry of tunable semiconductor alloy materials based on nitride semiconductor devices, specifically InGaN, motivates the search for earth-abundant alternatives for use in efficient, high-quality optoelectronic devices. II-IV-N2 compounds, which are closely related to the wurtzite-structured III-N semiconductors, have similar electronic and optical properties to InGaN namely direct band gaps, high quantum efficiencies and large optical absorption coefficients. The choice of different group II and group IV elements provides chemical diversity that can be exploited to tune the structural and electronic properties through the series of alloys. The first theoretical and experimental investigation of the ZnSnxGe1--xN2 series as a replacement for III-nitrides is discussed here. The second half of the thesis shows ab-initio calculations for surface plasmons and plasmonic hot carrier dynamics. Surface plasmons, electromagnetic modes confined to the surface of a conductor-dielectric interface, have sparked renewed interest because of their quantum nature and their broad range of applications. The decay of surface plasmons is usually a detriment in the field of plasmonics, but the possibility to capture the energy normally lost to heat would open new opportunities in photon sensors, energy conversion devices and switching. A theoretical understanding of plasmon-driven hot carrier generation and relaxation dynamics in the ultrafast regime is presented here. Additionally calculations for plasmon-mediated upconversion as well as an energy-dependent transport model for these non-equilibrium carriers are shown. Finally, this thesis gives an outlook on the
Jumping magneto-electric states of electrons in semiconductor multiple quantum wells
International Nuclear Information System (INIS)
Pfeffer, Pawel; Zawadzki, Wlodek
2011-01-01
Orbital and spin electron states in semiconductor multiple quantum wells in the presence of an external magnetic field transverse to the growth direction are considered. Rectangular wells of GaAs/GaAlAs and InAs/AlSb are taken as examples. It is shown that, in addition to magneto-electric states known from one-well systems, there appear magneto-electric states having a much stronger dependence of energies on a magnetic field and exhibiting an interesting anti-crossing behavior. The origin of these states is investigated and it is shown that the strong field dependence of the energies is related to an unusual 'jumping' behavior of their wavefunctions between quantum wells as the field increases. The ways of investigating the jumping states by means of interband magneto-luminescence transitions or intraband cyclotron-like transitions are considered and it is demonstrated that the jumping states can be observed. The spin g factors of electrons in the jumping states are calculated using the real values of the spin–orbit interaction and bands' nonparabolicity for the semiconductors in question. It is demonstrated that the jumping states offer a wide variety of the spin g factors
Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices
Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.
2015-06-01
A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the "CVBs interaction" that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.
Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices
International Nuclear Information System (INIS)
Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.
2015-01-01
A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the “CVBs interaction” that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices
Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices
Energy Technology Data Exchange (ETDEWEB)
Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A. [Integrated Systems Laboratory ETH Zürich, Gloriastrasse 35, 8092 Zürich (Switzerland)
2015-06-21
A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the “CVBs interaction” that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.
Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors
Directory of Open Access Journals (Sweden)
Jiadong Yu
2017-03-01
Full Text Available By considering the effects of stress fields coming from lattice distortion as well as charge fields coming from line charges at edge dislocation cores on radiative recombination of exciton, a model of carriers’ radiative and non-radiative recombination has been established in GaN-based semiconductors with certain dislocation density. Using vector average of the stress fields and the charge fields, the relationship between dislocation density and the internal quantum efficiency (IQE is deduced. Combined with related experimental results, this relationship is fitted well to the trend of IQEs of bulk GaN changing with screw and edge dislocation density, meanwhile its simplified form is fitted well to the IQEs of AlGaN multiple quantum well LEDs with varied threading dislocation densities but the same light emission wavelength. It is believed that this model, suitable for different epitaxy platforms such as MOCVD and MBE, can be used to predict to what extent the luminous efficiency of GaN-based semiconductors can still maintain when the dislocation density increases, so as to provide a reasonable rule of thumb for optimizing the epitaxial growth of GaN-based devices.
Energy Technology Data Exchange (ETDEWEB)
Stehr, D.
2007-12-28
This thesis deals with infrared studies of impurity states, ultrafast carrier dynamics as well as coherent intersubband polarizations in semiconductor quantum structures such as quantum wells and superlattices, based on the GaAs/AlGaAs material system. In the first part it is shown that the 2p{sub z} confined impurity state of a semiconductor quantum well develops into an excited impurity band in the case of a superlattice. This is studied by following theoretically the transition from a single to a multiple quantum well or superlattice by exactly diagonalizing the three-dimensional Hamiltonian for a quantum well system with random impurities. These results also require reinterpretation of previous experimental data. The relaxation dynamics of interminiband transitions in doped GaAs/AlGaAs superlattices in the mid-IR are studied. This involves single-color pump-probe measurements to explore the dynamics at different wavelengths, which is performed with the Rossendorf freeelectron laser (FEL), providing picosecond pulses in a range from 3-200 {mu}m and are used for the first time within this thesis. In these experiments, a fast bleaching of the interminiband transition is observed followed by thermalization and subsequent relaxation, whose time constants are determined to be 1-2 picoseconds. This is followed by an additional component due to carrier cooling in the lower miniband. In the second part, two-color pump-probe measurements are performed, involving the FEL as the pump source and a table-top broad-band tunable THz source for probing the transmission changes. In addition, the dynamics of excited electrons within the minibands is explored and their contribution quantitatively extracted from the measurements. Intersubband absorption experiments of photoexcited carriers in single quantum well structures, measured directly in the time-domain, i.e. probing coherently the polarization between the first and the second subband, are presented. By varying the carrier
Femtosecond spectroscopy in semiconductors: a key to coherences, correlations and quantum kinetics
International Nuclear Information System (INIS)
Axt, V M; Kuhn, T
2004-01-01
The application of femtosecond spectroscopy to the study of ultrafast dynamics in semiconductor materials and nanostructures is reviewed with particular emphasis on the physics that can be learned from it. Excitation with ultrashort optical pulses in general results in the creation of coherent superpositions and correlated many-particle states. The review comprises a discussion of the dynamics of this correlated many-body system during and after pulsed excitation as well as its analysis by means of refined measurements and advanced theories. After an introduction of basic concepts-such as coherence, correlation and quantum kinetics-a brief overview of the most important experimental techniques and theoretical approaches is given. The remainder of this paper is devoted to specific results selected in order to highlight how femtosecond spectroscopy gives access to the physics of coherences, correlations and quantum kinetics involving charge, spin and lattice degrees of freedom. First examples deal with the dynamics of basic laser-induced coherences that can be observed, e.g. in quantum beat spectroscopy, in coherent control measurements or in experiments using few-cycle pulses. The phenomena discussed here are basic in the sense that they can be understood to a large extent on the mean-field level of the theory. Nevertheless, already on this level it is found that semiconductors behave substantially differently from atomic systems. Subsequent sections report on the occurrence of coherences and correlations beyond the mean-field level that are mediated either by carrier-phonon or carrier-carrier interactions. The corresponding analysis gives deep insight into fundamental issues such as the energy-time uncertainty, pure dephasing in quantum dot structures, the role of two-pair or even higher correlations and the build-up of screening. Finally results are presented concerning the ultrafast dynamics of resonantly coupled excitations, where a combination of different
The discretized Schroedinger equation and simple models for semiconductor quantum wells
International Nuclear Information System (INIS)
Boykin, Timothy B; Klimeck, Gerhard
2004-01-01
The discretized Schroedinger equation is one of the most commonly employed methods for solving one-dimensional quantum mechanics problems on the computer, yet many of its characteristics remain poorly understood. The differences with the continuous Schroedinger equation are generally viewed as shortcomings of the discrete model and are typically described in purely mathematical terms. This is unfortunate since the discretized equation is more productively viewed from the perspective of solid-state physics, which naturally links the discrete model to realistic semiconductor quantum wells and nanoelectronic devices. While the relationship between the discrete model and a one-dimensional tight-binding model has been known for some time, the fact that the discrete Schroedinger equation admits analytic solutions for quantum wells has gone unnoted. Here we present a solution to this new analytically solvable problem. We show that the differences between the discrete and continuous models are due to their fundamentally different bandstructures, and present evidence for our belief that the discrete model is the more physically reasonable one
Deo, Vincent; Zhang, Yao; Soghomonian, Victoria; Heremans, Jean J.
2015-03-01
Quantum interference is used to measure the spin interactions between an InAs surface electron system and the iron center in the biomolecule hemin in nanometer proximity in a bio-organic/semiconductor device structure. The interference quantifies the influence of hemin on the spin decoherence properties of the surface electrons. The decoherence times of the electrons serve to characterize the biomolecule, in an electronic complement to the use of spin decoherence times in magnetic resonance. Hemin, prototypical for the heme group in hemoglobin, is used to demonstrate the method, as a representative biomolecule where the spin state of a metal ion affects biological functions. The electronic determination of spin decoherence properties relies on the quantum correction of antilocalization, a result of quantum interference in the electron system. Spin-flip scattering is found to increase with temperature due to hemin, signifying a spin exchange between the iron center and the electrons, thus implying interactions between a biomolecule and a solid-state system in the hemin/InAs hybrid structure. The results also indicate the feasibility of artificial bioinspired materials using tunable carrier systems to mediate interactions between biological entities.
Novel semiconductor solar cell structures: The quantum dot intermediate band solar cell
International Nuclear Information System (INIS)
Marti, A.; Lopez, N.; Antolin, E.; Canovas, E.; Stanley, C.; Farmer, C.; Cuadra, L.; Luque, A.
2006-01-01
The Quantum Dot Intermediate Band Solar Cell (QD-IBSC) has been proposed for studying experimentally the operating principles of a generic class of photovoltaic devices, the intermediate band solar cells (IBSC). The performance of an IBSC is based on the properties of a semiconductor-like material which is characterised by the existence of an intermediate band (IB) located within what would otherwise be its conventional bandgap. The improvement in efficiency of the cell arises from its potential (i) to absorb below bandgap energy photons and thus produce additional photocurrent, and (ii) to inject this enhanced photocurrent without degrading its output photo-voltage. The implementation of the IBSC using quantum dots (QDs) takes advantage of the discrete nature of the carrier density of states in a 0-dimensional nano-structure, an essential property for realising the IB concept. In the QD-IBSC, the IB arises from the confined electron states in an array of quantum dots. This paper reviews the operation of the first prototype QD-IBSCs and discusses some of the lessons learnt from their characterisation
Novel semiconductor solar cell structures: The quantum dot intermediate band solar cell
Energy Technology Data Exchange (ETDEWEB)
Marti, A. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain)]. E-mail: amarti@etsit.upm.es; Lopez, N. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain); Antolin, E. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain); Canovas, E. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain); Stanley, C. [Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ (United Kingdom); Farmer, C. [Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ (United Kingdom); Cuadra, L. [Departamento de Teoria de la Senal y Comunicaciones- Escuela Politecnica Superior, Universidad de Alcala, Ctra. Madrid-Barcelona, km. 33600, 28805-Alcala de Henares (Madrid) (Spain); Luque, A. [Instituto de Energia Solar-UPM, ETSIT de Madrid, Ciudad Universitaria sn, 28040 Madrid (Spain)
2006-07-26
The Quantum Dot Intermediate Band Solar Cell (QD-IBSC) has been proposed for studying experimentally the operating principles of a generic class of photovoltaic devices, the intermediate band solar cells (IBSC). The performance of an IBSC is based on the properties of a semiconductor-like material which is characterised by the existence of an intermediate band (IB) located within what would otherwise be its conventional bandgap. The improvement in efficiency of the cell arises from its potential (i) to absorb below bandgap energy photons and thus produce additional photocurrent, and (ii) to inject this enhanced photocurrent without degrading its output photo-voltage. The implementation of the IBSC using quantum dots (QDs) takes advantage of the discrete nature of the carrier density of states in a 0-dimensional nano-structure, an essential property for realising the IB concept. In the QD-IBSC, the IB arises from the confined electron states in an array of quantum dots. This paper reviews the operation of the first prototype QD-IBSCs and discusses some of the lessons learnt from their characterisation.
Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3 μm Invited Paper
Institute of Scientific and Technical Information of China (English)
D. Bimberg; C. Meuer; M. L(a)mmlin; S. Liebich; J. Kim; A. Kovsh; I. Krestnikov; G. Eisenstein
2008-01-01
@@ The dynamics of nonlinear processes in quantum dot (QD) semiconductor optical amplifiers (SOAs) are investigated. Using small-signal measurements, the suitabilities of cross-gain and cross-phase modulation as well as four wave mixing (FWM) for wavelength conversion are examined. The cross-gain modulation is found to be suitable for wavelength conversion up to a frequency of 40 GHz.
van Driel, A.F.; Nikolaev, I.; Vergeer, P.; Lodahl, P.; Vanmaekelbergh, D.; Vos, Willem L.
2007-01-01
We present a statistical analysis of time-resolved spontaneous emission decay curves from ensembles of emitters, such as semiconductor quantum dots, with the aim of interpreting ubiquitous non-single-exponential decay. Contrary to what is widely assumed, the density of excited emitters and the
DEFF Research Database (Denmark)
Dery, H.; Tromborg, Bjarne; Eisenstein, G.
2003-01-01
We describe a theoretical model for carrier-carrier scattering in an inverted semiconductor quantum well structure using a multisubband diagram. The model includes all possible nonvanishing interaction terms within the static screening approximation, and it enables one to calculate accurately...
Koole, R.
2008-01-01
This thesis focuses on both the fundamental aspects as well as applications of colloidal semiconductor nanocrystals, also called quantum dots (QDs). Due to the unique size-dependent optical and electronic properties of QDs, they hold great promise for a wide range of applications like solar cells,
International Nuclear Information System (INIS)
Bhattacharyya, S; Das, N R
2012-01-01
In this paper, we study the oscillator strength and cross-section for intersubband optical transition in an n-type semiconductor quantum ring of cylindrical symmetry in the presence of an electric field perpendicular to the plane of the ring. The analysis is done considering Kane-type band non-parabolicity of the semiconductor and assuming that the polarization of the incident radiation is along the axis of the ring. The results show that the oscillator strength decreases and the transition energy increases with the electric field. The assumption of a parabolic band leads to an overestimation of the oscillator strength. The effects of the electric field, band non-parabolicity and relaxation time on absorption cross-section for intersubband transition in a semiconductor quantum ring are also shown. (paper)
Nonlinear optics response of semiconductor quantum wells under high magnetic fields
International Nuclear Information System (INIS)
Chemla, D.S.
1993-07-01
Recent investigations on the nonlinear optical response of semiconductor quantum wells in a strong perpendicular magnetic field, H, are reviewed. After some introductory material the evolution of the linear optical properties of GaAs QW's as a function of H is discussed; an examination is made of how the magneto-excitons (MX) extrapolate continuously between quasi-2D QW excitons (X) when H = 0, and pairs of Landau levels (LL) when H → ∞. Next, femtosecond time resolved investigations of their nonlinear optical response are presented; the evolution of MX-MX interactions with increasing H is stressed. Finally, how, as the dimensionality is reduced by application of H, the number of scattering channels is limited and relaxation of electron-hole pairs is affected. How nonlinear optical spectroscopy can be exploited to access the relaxation of angular momentum within magneto-excitons is also discussed
International Nuclear Information System (INIS)
Betancourt-Riera, Ri.; Nieto Jalil, J.M.; Betancourt-Riera, Re.; Riera, R.
2009-01-01
The differential cross-section for an electron Raman scattering process in a semiconductor quantum wire in the presence of an external magnetic field perpendicular to the plane of confinement regarding phonon-assisted transitions, is calculated. We assume single parabolic conduction band and present a description of the phonon modes of cylindrical structures embedded in another material using the Froehlich phonon interaction. To illustrate the theory we use a GaAs/Al 0.35 Ga 0.75 As system. The emission spectra are discussed for different scattering configurations and the selection rules for the processes are also studied. The magnetic field distribution is considered constant with value B 0 inside of the wire, and zero outside.
Yan, Jie-Yun
2017-08-01
The theory of excitonic high-order sideband generation (HSG) in a semiconductor quantum well irradiated by two orthogonal terahertz (THz) fields (one frequency is an integral multiple of the other) is presented. The exact analytical solution to the sideband spectrum is given with the help of the generalized Bessel functions. As a special case, the HSG when the frequencies of these two THz fields are the same is derived and its dependence on the ellipticity of the THz field is discussed. The theory could explain the experiments, especially concerning the sensitive dependence of HSG signals on the ellipticity of the THz field: the signals are strong when the THz field has a linear polarization and totally vanish in case of a circular polarization. More interestingly, it was found that the strongest signal is not produced in the case of linear polarization for some sidebands. The theory is supported by numerical calculations.
Two-tone nonlinear electrostatic waves in the quantum electron–hole plasma of semiconductors
Energy Technology Data Exchange (ETDEWEB)
Dubinov, A. E., E-mail: dubinov-ae@yandex.ru; Kitayev, I. N. [Russian Federal Nuclear Center–All-Russia Scientific and Research Institute of Experimental Physics (RFNC–VNIIEF) (Russian Federation)
2017-01-15
Longitudinal electrostatic waves in the quantum electron–hole plasma of semiconductors are considered taking into account the degeneracy of electrons and holes and the exchange interaction. It is found in the framework of linear theory that the dispersion curve of longitudinal waves has two branches: plasmon and acoustic. An expression for the critical cutoff frequency for plasma oscillations and an expression for the speed of sound for acoustic vibrations are derived. It is shown that the plasma wave always exists in the form of a superposition of two components, characterized by different periods and wavelengths. Two nonlinear solutions are obtained within nonlinear theory: one in the form of a simple superposition of two tones and the other in the form of beats.
Phase locking of a semiconductor double-quantum-dot single-atom maser
Liu, Y.-Y.; Hartke, T. R.; Stehlik, J.; Petta, J. R.
2017-11-01
We experimentally study the phase stabilization of a semiconductor double-quantum-dot (DQD) single-atom maser by injection locking. A voltage-biased DQD serves as an electrically tunable microwave frequency gain medium. The statistics of the maser output field demonstrate that the maser can be phase locked to an external cavity drive, with a resulting phase noise L =-99 dBc/Hz at a frequency offset of 1.3 MHz. The injection locking range, and the phase of the maser output relative to the injection locking input tone are in good agreement with Adler's theory. Furthermore, the electrically tunable DQD energy level structure allows us to rapidly switch the gain medium on and off, resulting in an emission spectrum that resembles a frequency comb. The free running frequency comb linewidth is ≈8 kHz and can be improved to less than 1 Hz by operating the comb in the injection locked regime.
DEFF Research Database (Denmark)
Barettin, D.; Houmark-Nielsen, Jakob; Lassen, B.
2010-01-01
different k*p band structure models. In addition to the separation of the heavy and light holes due to the biaxial strain component, we observe a general reduction in the transition strengths due to energy crossings in the valence bands caused by strain and band mixing effects. We furthermore find a non......Using multiband k*p theory we study the size and geometry dependence on the slow light properties of conical semiconductor quantum dots. We find the V-type scheme for electromagnetically induced transparency (EIT) to be most favorable, and identify an optimal height and size for efficient EIT...... operation. In case of the ladder scheme, the existence of additional dipole allowed intraband transitions along with an almost equidistant energy level spacing adds additional decay pathways, which significantly impairs the EIT effect. We further study the influence of strain and band mixing comparing four...
Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry
International Nuclear Information System (INIS)
Betancourt-Riera, Re.; Betancourt-Riera, Ri.; Nieto Jalil, J. M.; Riera, R.
2015-01-01
We study the electron states and the differential cross section for an electron Raman scattering process in a semiconductor quantum well wire of cylindrical ring geometry. The electron Raman scattering developed here can be used to provide direct information about the electron band structures of these confinement systems. We assume that the system grows in a GaAs/Al 0.35 Ga 0.65 As matrix. The system is modeled by considering T = 0 K and also a single parabolic conduction band, which is split into a sub-band system due to the confinement. The emission spectra are discussed for different scattering configurations, and the selection rules for the processes are also studied. Singularities in the spectra are found and interpreted. (paper)
Polar optical phonons in a semiconductor quantum-well: The complete matching problem
International Nuclear Information System (INIS)
Nieto, J.M.; Comas, F.
2007-01-01
Confined polar optical phonons in a semiconductor quantum-well (QW) are studied by applying a phenomenological theory which was proposed a few years ago and is based on a continuum approach. This theory considers the coupled character of the electromechanical vibrations and takes due account of both the electric and mechanical boundary conditions. In the present work, we have applied the so-called complete matching problem in contrast with all previous published works on the subject, where more restrictive approximate boundary conditions has been applied. We also consider the effects of strains at the interfaces on the phonon spectra. Comparisons with previous works are made, while we focused on the study of a ZnTe/CdTe/ZnTe QW
Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire
International Nuclear Information System (INIS)
Munguía-Rodríguez, M; Riera, R; Betancourt-Riera, Ri; Betancourt-Riera, Re; Nieto Jalil, J M
2016-01-01
The differential cross section for an electron Raman scattering process in a semiconductor GaAs/AlGaAs double quantum well wire is calculated, and expressions for the electronic states are presented. The system is modeled by considering T = 0 K and also with a single parabolic conduction band, which is split into a subband system due to the confinement. The gain and differential cross-section for an electron Raman scattering process are obtained. In addition, the emission spectra for several scattering configurations are discussed, and interpretations of the singularities found in the spectra are given. The electron Raman scattering studied here can be used to provide direct information about the efficiency of the lasers. (paper)
Directory of Open Access Journals (Sweden)
Andrea V. Bragas
2011-03-01
Full Text Available We report the enhancement of the optical second harmonic signal in non-centrosymmetric semiconductor CdS quantum dots, when they are placed in close contact with isolated silver nanoparticles. The intensity enhancement is about 1000. We also show that the enhancement increases when the incoming laser frequency $omega$ is tuned toward the spectral position of the silver plasmon at $2omega$, proving that the silver nanoparticle modifies the nonlinear emission.Received: 8 March 2011, Accepted: 30 May 2011; Edited by: L. Viña; Reviewed by: R. Gordon, Department of Electrical and Computer Engineering, University of Victoria, British Columbia, Canada; DOI: 10.4279/PIP.030002Cite as: P. M. Jais, C. von Bilderling, A. V. Bragas, Papers in Physics 3, 030002 (2011
Chen, Aixi
2014-11-03
In triple coupled semiconductor quantum well structures (SQWs) interacting with a coherent driving filed, a coherent coupling field and a weak probe field, spontaneous emission spectra are investigated. Our studies show emission spectra can easily be manipulated through changing the intensity of the driving and coupling field, detuning of the driving field. Some interesting physical phenomena such as spectral-line enhancement/suppression, spectral-line narrowing and spontaneous emission quenching may be obtained in our system. The theoretical studies of spontaneous emission spectra in SQWS have potential application in high-precision spectroscopy. Our studies are based on the real physical system [Appl. Phys. Lett.86(20), 201112 (2005)], and this scheme might be realizable with presently available techniques.
International Nuclear Information System (INIS)
Tomita, Yasuo; Matsushima, Shun-suke; Yamagami, Ryu-ichi; Jinzenji, Taka-aki; Sakuma, Shohei; Liu, Xiangming; Izuishi, Takuya; Shen, Qing
2017-01-01
We describe the nonlinear optical properties of inorganic-organic nanocomposite films in which semiconductor CdSe quantum dots as high as 6.8 vol.% are dispersed. Open/closed Z-scan measurements, degenerate multi-wave mixing and femtosecond pump-probe/transient grating measurements are conducted. It is shown that the observed fifth-order optical nonlinearity has the cascaded third-order contribution that becomes prominent at high concentrations of CdSe QDs. It is also shown that there are picosecond-scale intensity-dependent and nanosecond-scale intensity-independent decay components in absorptive and refractive nonlinearities. The former is caused by the Auger process, while the latter comes from the electron-hole recombination process. (paper)
An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant
2016-11-01
Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.
Bajorowicz, Beata; Kobylański, Marek P; Gołąbiewska, Anna; Nadolna, Joanna; Zaleska-Medynska, Adriana; Malankowska, Anna
2018-06-01
Quantum dot (QD)-decorated semiconductor micro- and nanoparticles are a new class of functional nanomaterials that have attracted considerable interest for their unique structural, optical and electronic properties that result from the large surface-to-volume ratio and the quantum confinement effect. In addition, because of QDs' excellent light-harvesting capacity, unique photoinduced electron transfer, and up-conversion behaviour, semiconductor nanoparticles decorated with quantum dots have been used widely in photocatalytic applications for the degradation of organic pollutants in both the gas and aqueous phases. This review is a comprehensive overview of the recent progress in synthesis methods for quantum dots and quantum dot-decorated semiconductor composites with an emphasis on their composition, morphology and optical behaviour. Furthermore, various approaches used for the preparation of QD-based composites are discussed in detail with respect to visible and UV light-induced photoactivity. Finally, an outlook on future development is proposed with the goal of overcoming challenges and stimulating further research into this promising field. Copyright © 2018 Elsevier B.V. All rights reserved.
Quantum 1/f noise in non-degerate semiconductors and emission statistics of alpha particles
International Nuclear Information System (INIS)
Kousik, G.S.
1985-01-01
Charged particle scattering is accompanied by the emission of soft photons. Handel's theory of 1/f noise, based on the infrared divergent coupling of the system to the electromagnetic field or other elementary excitations, states that the current associated with a beam of scattered particles will exhibit 1/f noise. The fraction of the particles scattered with an energy loss epsilon to soft photon emission is proportional to 1/epsilon and herein lies the origin of the quantum theory of 1/f noise. The 1/f noise caused by mobility fluctuations in semiconductors is related to the scattering cross section fluctuation given by Handel's theory, through the relaxation time. Chapters Two through Five of this dissertation presents the results of the detailed calculation of mobility fluctuation 1/f noise and Hooge parameter in nondegenerate semiconductors. Numerical results are given for silicon and gallium arsenide. Data obtained from extensive measurements on counting techniques for alpha-particles radioactive decay from a source containing 94 Pu 239 , 95 Am 241 and 96 Cm 244 are presented in Chapters Six and Seven of this dissertation. These data show that the statistics are non-Poissonian for large counting times (of the order of 1000 minutes) contrary to the popular belief that alpha-decay is an example of Poissonian statistics. Measurements of the Allan variance indicated the presence of a slow Lorentzian flicker noise and 1/f noise and the magnitude of the noise for large counting times is considerably larger than that predicted by Poissonian statistics
Ring-shaped active mode-locked tunable laser using quantum-dot semiconductor optical amplifier
Zhang, Mingxiao; Wang, Yongjun; Liu, Xinyu
2018-03-01
In this paper, a lot of simulations has been done for ring-shaped active mode-locked lasers with quantum-dot semiconductor optical amplifier (QD-SOA). Based on the simulation model of QD-SOA, we discussed about the influence towards mode-locked waveform frequency and pulse caused by QD-SOA maximum mode peak gain, active layer loss coefficient, bias current, incident light pulse, fiber nonlinear coefficient. In the meantime, we also take the tunable performance of the laser into consideration. Results showed QD-SOA a better performance than original semiconductor optical amplifier (SOA) in recovery time, line width, and nonlinear coefficients, which makes it possible to output a locked-mode impulse that has a higher impulse power, narrower impulse width as well as the phase is more easily controlled. After a lot of simulations, this laser can realize a 20GHz better locked-mode output pulse after 200 loops, where the power is above 17.5mW, impulse width is less than 2.7ps, moreover, the tunable wavelength range is between 1540nm-1580nm.
Quantum dynamics of nuclear spins and spin relaxation in organic semiconductors
Mkhitaryan, V. V.; Dobrovitski, V. V.
2017-06-01
We investigate the role of the nuclear-spin quantum dynamics in hyperfine-induced spin relaxation of hopping carriers in organic semiconductors. The fast-hopping regime, when the carrier spin does not rotate much between subsequent hops, is typical for organic semiconductors possessing long spin coherence times. We consider this regime and focus on a carrier random-walk diffusion in one dimension, where the effect of the nuclear-spin dynamics is expected to be the strongest. Exact numerical simulations of spin systems with up to 25 nuclear spins are performed using the Suzuki-Trotter decomposition of the evolution operator. Larger nuclear-spin systems are modeled utilizing the spin-coherent state P -representation approach developed earlier. We find that the nuclear-spin dynamics strongly influences the carrier spin relaxation at long times. If the random walk is restricted to a small area, it leads to the quenching of carrier spin polarization at a nonzero value at long times. If the random walk is unrestricted, the carrier spin polarization acquires a long-time tail, decaying as 1 /√{t } . Based on the numerical results, we devise a simple formula describing the effect quantitatively.
Liu, Yuanfeng; Sahoo, Pranati; Makongo, Julien P A; Zhou, Xiaoyuan; Kim, Sung-Joo; Chi, Hang; Uher, Ctirad; Pan, Xiaoqing; Poudeu, Pierre F P
2013-05-22
The thermopower (S) and electrical conductivity (σ) in conventional semiconductors are coupled adversely through the carriers' density (n) making it difficult to achieve meaningful simultaneous improvements in both electronic properties through doping and/or substitutional chemistry. Here, we demonstrate the effectiveness of coherently embedded full-Heusler (FH) quantum dots (QDs) in tailoring the density, mobility, and effective mass of charge carriers in the n-type Ti(0.1)Zr(0.9)NiSn half-Heusler matrix. We propose that the embedded FH QD forms a potential barrier at the interface with the matrix due to the offset of their conduction band minima. This potential barrier discriminates existing charge carriers from the conduction band of the matrix with respect to their relative energy leading to simultaneous large enhancements of the thermopower (up to 200%) and carrier mobility (up to 43%) of the resulting Ti(0.1)Zr(0.9)Ni(1+x)Sn nanocomposites. The improvement in S with increasing mole fraction of the FH-QDs arises from a drastic reduction (up to 250%) in the effective carrier density coupled with an increase in the carrier's effective mass (m*), whereas the surprising enhancement in the mobility (μ) is attributed to an increase in the carrier's relaxation time (τ). This strategy to manipulate the transport behavior of existing ensembles of charge carriers within a bulk semiconductor using QDs is very promising and could pave the way to a new generation of high figure of merit thermoelectric materials.
Influence of the nuclear Zeeman effect on mode locking in pulsed semiconductor quantum dots
Beugeling, Wouter; Uhrig, Götz S.; Anders, Frithjof B.
2017-09-01
The coherence of the electron spin in a semiconductor quantum dot is strongly enhanced by mode locking through nuclear focusing, where the synchronization of the electron spin to periodic pulsing is slowly transferred to the nuclear spins of the semiconductor material, mediated by the hyperfine interaction between these. The external magnetic field that drives the Larmor oscillations of the electron spin also subjects the nuclear spins to a Zeeman-like coupling, albeit a much weaker one. For typical magnetic fields used in experiments, the energy scale of the nuclear Zeeman effect is comparable to that of the hyperfine interaction, so that it is not negligible. In this work, we analyze the influence of the nuclear Zeeman effect on mode locking quantitatively. Within a perturbative framework, we calculate the Overhauser-field distribution after a prolonged period of pulsing. We find that the nuclear Zeeman effect can exchange resonant and nonresonant frequencies. We distinguish between models with a single type and with multiple types of nuclei. For the latter case, the positions of the resonances depend on the individual g factors, rather than on the average value.
Acousto-optic modulation of III-V semiconductor multiple quantum wells
International Nuclear Information System (INIS)
Smith, D.L.; Kogan, S.M.; Ruden, P.P.; Mailhiot, C.
1996-01-01
We present an analysis of the effect of surface acoustic waves (SAW close-quote s) on the optical properties of III-V semiconductor multiple quantum wells (MQW close-quote s). Modulation spectra at the fundamental and second harmonic of the SAW frequency are presented. The SAW modulates the optical properties of the MQW primarily by changing optical transition energies. The SAW generates both strains, which modulate the transition energies by deformation potential effects, and electric fields, which modulate the transition energies by the quantum confined Stark effect. We find that modulation of the transition energies by strain effects is usually more important than by electric-field effects. If large static electric fields occur in the MQW, the SAW-generated electric field can mix with the static field to give optical modulation, which is comparable in magnitude to modulation from the deformation potential effect. If there are no large static electric fields, modulation by the SAW-generated fields is negligible. A large static electric field distributes oscillator strength among the various optical transitions so that no single transition is as strong as the primary allowed transitions without a static electric field. To achieve the maximum modulation for fixed SAW parameters, it is best to modulate a strong optical transition. Thus optimum modulation occurs when there are no large static electric fields present and that modulation is primarily from deformation potential effects. We specifically consider Ga x In 1-x As/Ga x Al 1-x As MQW close-quote s grown on (100) and (111) oriented substrates, but our general conclusions apply to other type I MQW close-quote s fabricated from III-V semiconductors. copyright 1996 The American Physical Society
Zhou, Ning; Yuan, Meng; Gao, Yuhan; Li, Dongsheng; Yang, Deren
2016-04-26
Strong coupling between semiconductor excitons and localized surface plasmons (LSPs) giving rise to hybridized plexciton states in which energy is coherently and reversibly exchanged between the components is vital, especially in the area of quantum information processing from fundamental and practical points of view. Here, in photoluminescence spectra, rather than from common extinction or reflection measurements, we report on the direct observation of Rabi splitting of approximately 160 meV as an indication of strong coupling between excited states of CdSe/ZnS quantum dots (QDs) and LSP modes of silver nanoshells under nonresonant nanosecond pulsed laser excitation at room temperature. The strong coupling manifests itself as an anticrossing-like behavior of the two newly formed polaritons when tuning the silver nanoshell plasmon energies across the exciton line of the QDs. Further analysis substantiates the essentiality of high pump energy and collective strong coupling of many QDs with the radiative dipole mode of the metallic nanoparticles for the realization of strong coupling. Our finding opens up interesting directions for the investigation of strong coupling between LSPs and excitons from the perspective of radiative recombination under easily accessible experimental conditions.
Binding of two-electron metastable states in semiconductor quantum dots under a magnetic field
Garagiola, Mariano; Pont, Federico M.; Osenda, Omar
2018-04-01
Applying a strong enough magnetic field results in the binding of few-electron resonant states. The mechanism was proposed many years ago but its verification in laboratory conditions is far more recent. In this work we study the binding of two-electron resonant states. The electrons are confined in a cylindrical quantum dot which is embedded in a semiconductor wire. The geometry considered is similar to the one used in actual experimental setups. The low-energy two-electron spectrum is calculated numerically from an effective-mass approximation Hamiltonian modelling the system. Methods for binding threshold calculations in systems with one and two electrons are thoroughly studied; in particular, we use quantum information quantities to assess when the strong lateral confinement approximation can be used to obtain reliable low-energy spectra. For simplicity, only cases without bound states in the absence of an external field are considered. Under these conditions, the binding threshold for the one-electron case is given by the lowest Landau energy level. Moreover, the energy of the one-electron bounded resonance can be used to obtain the two-electron binding threshold. It is shown that for realistic values of the two-electron model parameters it is feasible to bind resonances with field strengths of a few tens of tesla.
Mohammadzadeh, Atefeh; Miri, MirFaez
2018-01-01
We study the response of a semiconductor quantum dot-metal nanoparticle system to an external field E 0 cos ( ω t ) . The borders between Fano, double peaks, weak transition, strong transition, and bistability regions of the phase diagram move considerably as one regards the multipole effects. The exciton-induced transparency is an artifact of the dipole approximation. The absorption of the nanoparticle, the population inversion of the quantum dot, the upper and lower limits of intensity where bistability occurs, the characteristic time to reach the steady state, and other features of the hybrid system change due to the multipole effects. The phase diagrams corresponding to the fields parallel and perpendicular to the axis of system are quite distinguishable. Thus, both the intensity and the polarization of the incident field can be used to control the system. In particular, the incident polarization can be used to switch on and switch off the bistable behavior. For applications such as miniaturized bistable devices and nanosensors sensitive to variations of the dielectric constant of the surrounding medium, multipole effects must be considered.
Fast optical source for quantum key distribution based on semiconductor optical amplifiers.
Jofre, M; Gardelein, A; Anzolin, G; Amaya, W; Capmany, J; Ursin, R; Peñate, L; Lopez, D; San Juan, J L; Carrasco, J A; Garcia, F; Torcal-Milla, F J; Sanchez-Brea, L M; Bernabeu, E; Perdigues, J M; Jennewein, T; Torres, J P; Mitchell, M W; Pruneri, V
2011-02-28
A novel integrated optical source capable of emitting faint pulses with different polarization states and with different intensity levels at 100 MHz has been developed. The source relies on a single laser diode followed by four semiconductor optical amplifiers and thin film polarizers, connected through a fiber network. The use of a single laser ensures high level of indistinguishability in time and spectrum of the pulses for the four different polarizations and three different levels of intensity. The applicability of the source is demonstrated in the lab through a free space quantum key distribution experiment which makes use of the decoy state BB84 protocol. We achieved a lower bound secure key rate of the order of 3.64 Mbps and a quantum bit error ratio as low as 1.14×10⁻² while the lower bound secure key rate became 187 bps for an equivalent attenuation of 35 dB. To our knowledge, this is the fastest polarization encoded QKD system which has been reported so far. The performance, reduced size, low power consumption and the fact that the components used can be space qualified make the source particularly suitable for secure satellite communication.
International Nuclear Information System (INIS)
Ma, Minjie; Jalil, Mansoor Bin Abdul; Tan, Seng Gee
2013-01-01
The spin-dependent transport through a diluted magnetic semiconductor quantum dot (QD) which is coupled via magnetic tunnel junctions to two ferromagnetic leads is studied theoretically. A noncollinear system is considered, where the QD is magnetized at an arbitrary angle with respect to the leads’ magnetization. The tunneling current is calculated in the coherent regime via the Keldysh nonequilibrium Green’s function (NEGF) formalism, incorporating the electron–electron interaction in the QD. We provide the first analytical solution for the Green’s function of the noncollinear DMS quantum dot system, solved via the equation of motion method under Hartree–Fock approximation. The transport characteristics (charge and spin currents, and tunnel magnetoresistance (TMR)) are evaluated for different voltage regimes. The interplay between spin-dependent tunneling and single-charge effects results in three distinct voltage regimes in the spin and charge current characteristics. The voltage range in which the QD is singly occupied corresponds to the maximum spin current and greatest sensitivity of the spin current to the QD magnetization orientation. The QD device also shows transport features suitable for sensor applications, i.e., a large charge current coupled with a high TMR ratio. - Highlights: ► The spin polarized transport through a diluted magnetic quantum dot is studied. ► The model is based on the Green’s function and the equation of motion method.► The charge and spin currents and tunnel magnetoresistance (TMR) are investigated. ► The system is suitable for current-induced spin-transfer torque application. ► A large tunneling current and a high TMR are possible for sensor application.
Plasmonic Control of Radiation and Absorption Processes in Semiconductor Quantum Dots
Energy Technology Data Exchange (ETDEWEB)
Paiella, Roberto [Boston Univ., MA (United States); Moustakas, Theodore D. [Boston Univ., MA (United States)
2017-07-31
This document reviews a research program funded by the DOE Office of Science, which has been focused on the control of radiation and absorption processes in semiconductor photonic materials (including III-nitride quantum wells and quantum dots), through the use of specially designed metallic nanoparticles (NPs). By virtue of their strongly confined plasmonic resonances (i.e., collective oscillations of the electron gas), these nanostructures can concentrate incident radiation into sub-wavelength “hot spots” of highly enhanced field intensity, thereby increasing optical absorption by suitably positioned absorbers. By reciprocity, the same NPs can also dramatically increase the spontaneous emission rate of radiating dipoles located within their hot spots. The NPs can therefore be used as optical antennas to enhance the radiation output of the underlying active material and at the same time control the far-field pattern of the emitted light. The key accomplishments of the project include the demonstration of highly enhanced light emission efficiency as well as plasmonic collimation and beaming along geometrically tunable directions, using a variety of plasmonic excitations. Initial results showing the reverse functionality (i.e., plasmonic unidirectional absorption and photodetection) have also been generated with similar systems. Furthermore, a new paradigm for the near-field control of light emission has been introduced through rigorous theoretical studies, based on the use of gradient metasurfaces (i.e., optical nanoantenna arrays with spatially varying shape, size, and/or orientation). These activities have been complemented by materials development efforts aimed at the synthesis of suitable light-emitting samples by molecular beam epitaxy. In the course of these efforts, a novel technique for the growth of III-nitride quantum dots has also been developed (droplet heteroepitaxy), with several potential advantages in terms of compositional and geometrical
High Photoluminescence Quantum Yields in Organic Semiconductor-Perovskite Composite Thin Films.
Longo, Giulia; La-Placa, Maria-Grazia; Sessolo, Michele; Bolink, Henk J
2017-10-09
One of the obstacles towards efficient radiative recombination in hybrid perovskites is a low exciton binding energy, typically in the orders of tens of meV. It has been shown that the use of electron-donor additives can lead to a substantial reduction of the non-radiative recombination in perovskite films. Herein, the approach using small molecules with semiconducting properties, which are candidates to be implemented in future optoelectronic devices, is presented. In particular, highly luminescent perovskite-organic semiconductor composite thin films have been developed, which can be processed from solution in a simple coating step. By tuning the relative concentration of methylammonium lead bromide (MAPbBr 3 ) and 9,9spirobifluoren-2-yl-diphenyl-phosphine oxide (SPPO1), it is possible to achieve photoluminescent quantum yields (PLQYs) as high as 85 %. This is attributed to the dual functions of SPPO1 that limit the grain growth while passivating the perovskite surface. The electroluminescence of these materials was investigated by fabricating multilayer LEDs, where charge injection and transport was found to be severely hindered for the perovskite/SPPO1 material. This was alleviated by partially substituting SPPO1 with a hole-transporting material, 1,3-bis(N-carbazolyl)benzene (mCP), leading to bright electroluminescence. The potential of combining perovskite and organic semiconductors to prepare materials with improved properties opens new avenues for the preparation of simple lightemitting devices using perovskites as the emitter. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Energy Technology Data Exchange (ETDEWEB)
Karni, O., E-mail: oulrik@tx.technion.ac.il; Mikhelashvili, V.; Eisenstein, G. [Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Kuchar, K. J. [Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Institute of Physics, Wroclaw University of Technology, Wroclaw 50-370 (Poland); Capua, A. [Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel); IBM Almaden Research Center, San Jose, 95120 California (United States); Sęk, G.; Misiewicz, J. [Institute of Physics, Wroclaw University of Technology, Wroclaw 50-370 (Poland); Ivanov, V.; Reithmaier, J. P. [Technische Physik, Institute of Nanostructure Technology and Analytics, CINSaT, University of Kassel, Kassel D-34132 (Germany)
2014-03-24
We report on a characterization of fundamental gain dynamics in recently developed InAs/InP quantum-dot semiconductor optical amplifiers. Multi-wavelength pump-probe measurements were used to determine gain recovery rates, following a powerful optical pump pulse, at various wavelengths for different bias levels and pump excitation powers. The recovery was dominated by coupling between the electronic states in the quantum-dots and the high energy carrier reservoir via capture and escape mechanisms. These processes determine also the wavelength dependencies of gain saturation depth and the asymptotic gain recovery level. Unlike quantum-dash amplifiers, these quantum-dots exhibit no instantaneous gain response, confirming their quasi zero-dimensional nature.
Energy Technology Data Exchange (ETDEWEB)
Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel
2017-07-01
We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.
Quantum transport through complex networks - from light-harvesting proteins to semiconductor devices
Energy Technology Data Exchange (ETDEWEB)
Kreisbeck, Christoph
2012-06-18
Electron transport through small systems in semiconductor devices plays an essential role for many applications in micro-electronics. One focus of current research lies on establishing conceptually new devices based on ballistic transport in high mobility AlGaAs/AlGa samples. In the ballistic regime, the transport characteristics are determined by coherent interference effects. In order to guide experimentalists to an improved device design, the characterization and understanding of intrinsic device properties is crucial. We develop a time-dependent approach that allows us to simulate experimentally fabricated, complex devicegeometries with an extension of up to a few micrometers. Particularly, we explore the physical origin of unexpected effects that have been detected in recent experiments on transport through Aharonov-Bohm waveguide-interferometers. Such interferometers can be configured as detectors for transfer properties of embedded quantum systems. We demonstrate that a four-terminal waveguide-ring is a suitable setup for measuring the transmission phase of a harmonic quantum dot. Quantum effects are not restricted exclusively to artificial devices but have been found in biological systems as well. Pioneering experiments reveal quantum effects in light-harvesting complexes, the building blocks of photosynthesis. We discuss the Fenna-Matthews-Olson complex, which is a network of coupled bacteriochlorophylls. It acts as an energy wire in the photosynthetic apparatus of green sulfur bacteria. Recent experimental findings suggest that energy transfer takes place in the form of coherent wave-like motion, rather than through classical hopping from one bacteriochlorophyll to the next. However, the question of why and how coherent transfer emerges in light-harvesting complexes is still open. The challenge is to merge seemingly contradictory features that are observed in experiments on two-dimensional spectroscopy into a consistent theory. Here, we provide such a
Directory of Open Access Journals (Sweden)
Kurochkina M
2018-04-01
Full Text Available Margarita Kurochkina,1 Elena Konshina,1 Aleksandr Oseev,2 Soeren Hirsch3 1Centre of Information Optical Technologies, ITMO University, Saint Petersburg, Russia; 2Institute of Micro and Sensor Systems, Otto-von-Guericke-University Magdeburg, Magdeburg, Germany; 3Department of Engineering, University of Applied Sciences Brandenburg, Brandenburg an der Havel, Germany Background: The luminescence amplification of semiconductor quantum dots (QD in the presence of self-assembled gold nanoparticles (Au NPs is one of way for creating biosensors with highly efficient transduction. Aims: The objective of this study was to fabricate the hybrid structures based on semiconductor CdSe/ZnS QDs and Au NP arrays and to use them as biosensors of protein. Methods: In this paper, the hybrid structures based on CdSe/ZnS QDs and Au NP arrays were fabricated using spin coating processes. Au NP arrays deposited on a glass wafer were investigated by optical microscopy and absorption spectroscopy depending on numbers of spin coating layers and their baking temperature. Bovine serum albumin (BSA was used as the target protein analyte in a phosphate buffer. A confocal laser scanning microscope was used to study the luminescent properties of Au NP/QD hybrid structures and to test BSA. Results: The dimensions of Au NP aggregates increased and the space between them decreased with increasing processing temperature. At the same time, a blue shift of the plasmon resonance peak in the absorption spectra of Au NP arrays was observed. The deposition of CdSe/ZnS QDs with a core diameter of 5 nm on the surface of the Au NP arrays caused an increase in absorption and a red shift of the plasmon peak in the spectra. The exciton–plasmon enhancement of the QDs’ photoluminescence intensity has been obtained at room temperature for hybrid structures with Au NPs array pretreated at temperatures of 100°C and 150°C. It has been found that an increase in the weight content of BSA
Schneebeli, L.; Kira, M.; Koch, S. W.
2008-08-01
It is shown that spectrally resolved photon-statistics measurements of the resonance fluorescence from realistic semiconductor quantum-dot systems allow for high contrast identification of the two-photon strong-coupling states. Using a microscopic theory, the second-rung resonance of Jaynes-Cummings ladder is analyzed and optimum excitation conditions are determined. The computed photon-statistics spectrum displays gigantic, experimentally robust resonances at the energetic positions of the second-rung emission.
International Nuclear Information System (INIS)
Wang Zhigang; Zheng Zhiren; Yu Junhua
2007-01-01
The transient gain property of a weak probe field in an asymmetric semiconductor coupled double quantum well structure is reported. The transient process of the system, which is induced by the external coherent coupling field, shows the property of no inverse gain. We find that the transient behavior of the probe field can be tuned by the change of tunneling barrier. Both the amplitude of the transient gain and the frequency of the oscillation can be affected by the lifetime broadening
Mansur, Alexandra A. P.; Mansur, Herman S.; Mansur, Rafael L.; de Carvalho, Fernanda G.; Carvalho, Sandhra M.
2018-01-01
Colloidal semiconductor quantum dots (QDs) are light-emitting ultra-small nanoparticles, which have emerged as a new class of nanoprobes with unique optical properties for bioimaging and biomedical diagnostic. However, to be used for most biomedical applications the biocompatibility and water-solubility are mandatory that can achieved through surface modification forming QD-nanoconjugates. In this study, semiconductor II-VI quantum dots of type MX (M = Cd, Pb, Zn, X = S) were directly synthesized in aqueous media and at room temperature using carboxymethylcellulose sodium salt (CMC) behaving simultaneously as stabilizing and surface biofunctional ligand. These nanoconjugates were extensively characterized using UV-visible spectroscopy, photoluminescence spectroscopy, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, X-ray diffraction, transmission electron microscopy, dynamic light scattering and zeta potential. The results demonstrated that the biopolymer was effective on nucleating and stabilizing the colloidal nanocrystals of CdS, ZnS, and PbS with the average diameter ranging from 2.0 to 5.0 nm depending on the composition of the semiconductor core, which showed quantum-size confinement effect. These QD/polysaccharide conjugates showed luminescent activity from UV-visible to near-infrared range of the spectra under violet laser excitation. Moreover, the bioassays performed proved that these novel nanoconjugates were biocompatible and behaved as composition-dependent fluorescent nanoprobes for in vitro live cell bioimaging with very promising perspectives to be used in numerous biomedical applications and nanomedicine.
Optical studies of wide bandgap semiconductor epilayers and quantum well structures
International Nuclear Information System (INIS)
May, L.
1998-09-01
This thesis contains research on the optical properties of wide bandgap semiconductors, which are potentially useful for blue and UV emitters. The research covers materials from both the II-VI and III-V groups. In Chapter 1, a general introduction to the topic of blue and UV emitters is presented. The properties required of materials used for these applications are outlined, and the technological significance of these devices is discussed, in order to place this work into context. In Chapter 2, the main experimental techniques used in this work are outlined. These are photoluminescence spectroscopy (PL), photoluminescence excitation spectroscopy (PLE) and white light reflectivity. Chapter 3 begins with a discussion of the properties of ZnS. Then, following a brief outline of the sample growth technique, the optical studies of a series of ZnS single epitaxial layers are presented. The samples were characterised by photoluminescence spectroscopy, and the effect of strain on their properties studied in some detail. The results of tellurium and nitrogen doping studies are also presented. The chapter concludes with a study of ZnCdS epilayers. Chapter 4 begins with the growth and PL characterisation of a series of ZnS/ZnCdS multiple quantum well structures. Optically pumped stimulated emission experiments were then carried out on selected MQW samples. The results of these experiments are presented in the latter part of Chapter 4, followed by a discussion of the lasing mechanisms in II-VI quantum well structures. In Chapter 5, the growth and characterisation of a series of GaN epilayers are described. After an introduction outlining some of the key properties of GaN, the MOCVD growth procedure is described. Studies of the samples by PL, PLE and reflectivity are then presented. Finally, a study of p-type GaN epilayers is presented, and excimer laser annealing is investigated as a possible means of activating the dopant
Wu, Kaifeng; Lim, Jaehoon; Klimov, Victor I
2017-08-22
Application of colloidal semiconductor quantum dots (QDs) in optical and optoelectronic devices is often complicated by unintentional generation of extra charges, which opens fast nonradiative Auger recombination pathways whereby the recombination energy of an exciton is quickly transferred to the extra carrier(s) and ultimately dissipated as heat. Previous studies of Auger recombination have primarily focused on neutral and, more recently, negatively charged multicarrier states. Auger dynamics of positively charged species remains more poorly explored due to difficulties in creating, stabilizing, and detecting excess holes in the QDs. Here we apply photochemical doping to prepare both negatively and positively charged CdSe/CdS QDs with two distinct core/shell interfacial profiles ("sharp" versus "smooth"). Using neutral and charged QD samples we evaluate Auger lifetimes of biexcitons, negative and positive trions (an exciton with an extra electron or a hole, respectively), and multiply negatively charged excitons. Using these measurements, we demonstrate that Auger decay of both neutral and charged multicarrier states can be presented as a superposition of independent elementary three-particle Auger events. As one of the manifestations of the superposition principle, we observe that the biexciton Auger decay rate can be presented as a sum of the Auger rates for independent negative and positive trion pathways. By comparing the measurements on the QDs with the "sharp" versus "smooth" interfaces, we also find that while affecting the absolute values of Auger lifetimes, manipulation of the shape of the confinement potential does not lead to violation of the superposition principle, which still allows us to accurately predict the biexciton Auger lifetimes based on the measured negative and positive trion dynamics. These findings indicate considerable robustness of the superposition principle as applied to Auger decay of charged and neutral multicarrier states
Büttiker probes for dissipative phonon quantum transport in semiconductor nanostructures
Energy Technology Data Exchange (ETDEWEB)
Miao, K., E-mail: kmiao@purdue.edu; Charles, J.; Klimeck, G. [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana 47907 (United States); Sadasivam, S.; Fisher, T. S. [School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Kubis, T. [Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana 47907 (United States)
2016-03-14
Theoretical prediction of phonon transport in modern semiconductor nanodevices requires atomic resolution of device features and quantum transport models covering coherent and incoherent effects. The nonequilibrium Green's function method is known to serve this purpose well but is numerically expensive in simulating incoherent scattering processes. This work extends the efficient Büttiker probe approach widely used in electron transport to phonons and considers salient implications of the method. Different scattering mechanisms such as impurity, boundary, and Umklapp scattering are included, and the method is shown to reproduce the experimental thermal conductivity of bulk Si and Ge over a wide temperature range. Temperature jumps at the lead/device interface are captured in the quasi-ballistic transport regime consistent with results from the Boltzmann transport equation. Results of this method in Si/Ge heterojunctions illustrate the impact of atomic relaxation on the thermal interface conductance and the importance of inelastic scattering to activate high-energy channels for phonon transport. The resultant phonon transport model is capable of predicting the thermal performance in the heterostructure efficiently.
Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya
2015-04-01
A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed. Broadband QD optical gain material was used to achieve Gbps-order high-speed optical data transmission, and an optical gain change as high as approximately 6-7 dB was obtained with a low OGM voltage of 2.0 V. Loss of optical power due to insertion of the device was also effectively compensated for by the SOA section. Furthermore, it was confirmed that the QD-OGM/SOA device helped achieve 6.0-Gbps error-free optical data transmission over a 2.0-km-long photonic crystal fiber. We also successfully demonstrated generation of Gbps-order, high-speed, and error-free optical signals in the >5.5-THz broadband optical frequency bandwidth larger than the C-band. These results suggest that the developed monolithically integrated QD-OGM/SOA device will be an advantageous and compact means of increasing the usable optical frequency channels for short-reach communications.
Energy Technology Data Exchange (ETDEWEB)
Grasselli, Federico, E-mail: federico.grasselli@unimore.it; Goldoni, Guido, E-mail: guido.goldoni@unimore.it [Department of Physics, Informatics and Mathematics, University of Modena and Reggio Emilia, Modena (Italy); CNR-NANO S3, Institute for Nanoscience, Via Campi 213/a, 41125 Modena (Italy); Bertoni, Andrea, E-mail: andrea.bertoni@nano.cnr.it [CNR-NANO S3, Institute for Nanoscience, Via Campi 213/a, 41125 Modena (Italy)
2015-01-21
We study the unitary propagation of a two-particle one-dimensional Schrödinger equation by means of the Split-Step Fourier method, to study the coherent evolution of a spatially indirect exciton (IX) in semiconductor heterostructures. The mutual Coulomb interaction of the electron-hole pair and the electrostatic potentials generated by external gates and acting on the two particles separately are taken into account exactly in the two-particle dynamics. As relevant examples, step/downhill and barrier/well potential profiles are considered. The space- and time-dependent evolutions during the scattering event as well as the asymptotic time behavior are analyzed. For typical parameters of GaAs-based devices, the transmission or reflection of the pair turns out to be a complex two-particle process, due to comparable and competing Coulomb, electrostatic, and kinetic energy scales. Depending on the intensity and anisotropy of the scattering potentials, the quantum evolution may result in excitation of the IX internal degrees of freedom, dissociation of the pair, or transmission in small periodic IX wavepackets due to dwelling of one particle in the barrier region. We discuss the occurrence of each process in the full parameter space of the scattering potentials and the relevance of our results for current excitronic technologies.
Interband optical pulse injection locking of quantum dot mode-locked semiconductor laser.
Kim, Jimyung; Delfyett, Peter J
2008-07-21
We experimentally demonstrate optical clock recovery from quantum dot mode-locked semiconductor lasers by interband optical pulse injection locking. The passively mode-locked slave laser oscillating on the ground state or the first excited state transition is locked through the injection of optical pulses generated via the opposite transition bands, i.e. the first excited state or the ground state transition from the hybridly mode-locked master laser, respectively. When an optical pulse train generated via the first excited state from the master laser is injected to the slave laser oscillating via ground state, the slave laser shows an asymmetric locking bandwidth around the nominal repetition rate of the slave laser. In the reverse injection case of, i.e. the ground state (master laser) to the first excited state (slave laser), the slave laser does not lock even though both lasers oscillate at the same cavity frequency. In this case, the slave laser only locks to higher injection rates as compared to its own nominal repetition rate, and also shows a large locking bandwidth of 6.7 MHz.
Büttiker probes for dissipative phonon quantum transport in semiconductor nanostructures
International Nuclear Information System (INIS)
Miao, K.; Charles, J.; Klimeck, G.; Sadasivam, S.; Fisher, T. S.; Kubis, T.
2016-01-01
Theoretical prediction of phonon transport in modern semiconductor nanodevices requires atomic resolution of device features and quantum transport models covering coherent and incoherent effects. The nonequilibrium Green's function method is known to serve this purpose well but is numerically expensive in simulating incoherent scattering processes. This work extends the efficient Büttiker probe approach widely used in electron transport to phonons and considers salient implications of the method. Different scattering mechanisms such as impurity, boundary, and Umklapp scattering are included, and the method is shown to reproduce the experimental thermal conductivity of bulk Si and Ge over a wide temperature range. Temperature jumps at the lead/device interface are captured in the quasi-ballistic transport regime consistent with results from the Boltzmann transport equation. Results of this method in Si/Ge heterojunctions illustrate the impact of atomic relaxation on the thermal interface conductance and the importance of inelastic scattering to activate high-energy channels for phonon transport. The resultant phonon transport model is capable of predicting the thermal performance in the heterostructure efficiently.
Büttiker probes for dissipative phonon quantum transport in semiconductor nanostructures
Miao, K.; Sadasivam, S.; Charles, J.; Klimeck, G.; Fisher, T. S.; Kubis, T.
2016-03-01
Theoretical prediction of phonon transport in modern semiconductor nanodevices requires atomic resolution of device features and quantum transport models covering coherent and incoherent effects. The nonequilibrium Green's function method is known to serve this purpose well but is numerically expensive in simulating incoherent scattering processes. This work extends the efficient Büttiker probe approach widely used in electron transport to phonons and considers salient implications of the method. Different scattering mechanisms such as impurity, boundary, and Umklapp scattering are included, and the method is shown to reproduce the experimental thermal conductivity of bulk Si and Ge over a wide temperature range. Temperature jumps at the lead/device interface are captured in the quasi-ballistic transport regime consistent with results from the Boltzmann transport equation. Results of this method in Si/Ge heterojunctions illustrate the impact of atomic relaxation on the thermal interface conductance and the importance of inelastic scattering to activate high-energy channels for phonon transport. The resultant phonon transport model is capable of predicting the thermal performance in the heterostructure efficiently.
Field, Lauren D.; Walper, Scott A.; Susumu, Kimihiro; Oh, Eunkeu; Medintz, Igor L.; Delehanty, James B.
2017-02-01
Förster resonance energy transfer (FRET)-based assemblies currently comprise a significant portion of intracellularly based sensors. Although extremely useful, the fluorescent protein pairs typically utilized in such sensors are still plagued by many photophysical issues including significant direct acceptor excitation, small changes in FRET efficiency, and limited photostability. Luminescent semiconductor nanocrystals or quantum dots (QDs) are characterized by many unique optical properties including size-tunable photoluminescence, broad excitation profiles coupled to narrow emission profiles, and resistance to photobleaching, which can cumulatively overcome many of the issues associated with use of fluorescent protein FRET donors. Utilizing QDs for intracellular FRET-based sensing still requires significant development in many areas including materials optimization, bioconjugation, cellular delivery and assay design and implementation. We are currently developing several QD-based FRET sensors for various intracellular applications. These include sensors targeting intracellular proteolytic activity along with those based on theranostic nanodevices for monitoring drug release. The protease sensor is based on a unique design where an intracellularly expressed fluorescent acceptor protein substrate assembles onto a QD donor following microinjection, forming an active complex that can be monitored in live cells over time. In the theranostic configuration, the QD is conjugated to a carrier protein-drug analogue complex to visualize real-time intracellular release of the drug from its carrier in response to an external stimulus. The focus of this talk will be on the design, properties, photophysical characterization and cellular application of these sensor constructs.
Spin splitting generated in a Y-shaped semiconductor nanostructure with a quantum point contact
International Nuclear Information System (INIS)
Wójcik, P.; Adamowski, J.; Wołoszyn, M.; Spisak, B. J.
2015-01-01
We have studied the spin splitting of the current in the Y-shaped semiconductor nanostructure with a quantum point contact (QPC) in a perpendicular magnetic field. Our calculations show that the appropriate tuning of the QPC potential and the external magnetic field leads to an almost perfect separation of the spin-polarized currents: electrons with opposite spins flow out through different output branches. The spin splitting results from the joint effect of the QPC, the spin Zeeman splitting, and the electron transport through the edge states formed in the nanowire at the sufficiently high magnetic field. The Y-shaped nanostructure can be used to split the unpolarized current into two spin currents with opposite spins as well as to detect the flow of the spin current. We have found that the separation of the spin currents is only slightly affected by the Rashba spin-orbit coupling. The spin-splitter device is an analogue of the optical device—the birefractive crystal that splits the unpolarized light into two beams with perpendicular polarizations. In the magnetic-field range, in which the current is carried through the edges states, the spin splitting is robust against the spin-independent scattering. This feature opens up a possibility of the application of the Y-shaped nanostructure as a non-ballistic spin-splitter device in spintronics
Spin splitting generated in a Y-shaped semiconductor nanostructure with a quantum point contact
Wójcik, P.; Adamowski, J.; Wołoszyn, M.; Spisak, B. J.
2015-07-01
We have studied the spin splitting of the current in the Y-shaped semiconductor nanostructure with a quantum point contact (QPC) in a perpendicular magnetic field. Our calculations show that the appropriate tuning of the QPC potential and the external magnetic field leads to an almost perfect separation of the spin-polarized currents: electrons with opposite spins flow out through different output branches. The spin splitting results from the joint effect of the QPC, the spin Zeeman splitting, and the electron transport through the edge states formed in the nanowire at the sufficiently high magnetic field. The Y-shaped nanostructure can be used to split the unpolarized current into two spin currents with opposite spins as well as to detect the flow of the spin current. We have found that the separation of the spin currents is only slightly affected by the Rashba spin-orbit coupling. The spin-splitter device is an analogue of the optical device—the birefractive crystal that splits the unpolarized light into two beams with perpendicular polarizations. In the magnetic-field range, in which the current is carried through the edges states, the spin splitting is robust against the spin-independent scattering. This feature opens up a possibility of the application of the Y-shaped nanostructure as a non-ballistic spin-splitter device in spintronics.
Medintz, Igor L.; Pons, Thomas; Trammell, Scott A.; Blanco-Canosa, Juan B.; Dawson, Philip E.; Mattoussi, Hedi
2009-02-01
Luminescent colloidal semiconductor quantum dots (QDs) have unique optical and photonic properties and are highly sensitive to charge transfer in their surrounding environment. In this study we used synthetic peptides as physical bridges between CdSe-ZnS core-shell QDs and some of the most common redox-active metal complexes to understand the charge transfer interactions between the metal complexes and QDs. We found that QD emission underwent quenching that was highly dependent on the choice of metal complex used. We also found that quenching traces the valence or number of metal complexes brought into close proximity of the nanocrystal surface. Monitoring of the QD absorption bleaching in the presence of the metal complex provided insight into the charge transfer mechanism. The data suggest that two distinct charge transfer mechanisms can take place. One directly to the QD core states for neutral capping ligands and a second to surface states for negatively charged capping ligands. A basic understanding of the proximity driven charge-transfer and quenching interactions allowed us to construct proteolytic enzyme sensing assemblies with the QD-peptide-metal complex conjugates.
DEFF Research Database (Denmark)
Nielsen, Per Kær; Nielsen, Torben Roland; Lodahl, Peter
2009-01-01
Since it was realized that efficient quantum computing can be performed using single photons and standard linear optics elements, immense international research activity has been aimed at developing semiconductor quantum dot (QD) single-photon sources (SPS). In order to optimise the design of SPS...... us to study complicated multi-level QDs, not possible within the commonly used independent boson model (IBM)....
Energy Technology Data Exchange (ETDEWEB)
Dal Savio, C.
2006-02-20
Single InAs quantum dots (QDs) grown with the Stranski-Krastanov method in a In{sub 0.12}Ga{sub 0.88}As quantum well embedded in GaAs and emitting in the near infrared have been optically investigated. To perform QD spectroscopy at low temperatures a very stable micro-photoluminescence ({mu}-PL) microscope set-up fully integrated in a liquid helium (LHe) cryostate has been successfully developed. The system is based on the cold finger technique and a Fourier Transform (FT) spectrometer combined with a nitrogen cooled Ge detector. Photoluminescence of the QDs was excited non resonantly with a He-Ne laser and single dot spectroscopy was carried out at temperatures below 60 K. The experimental set-up allows mapping of the optical emission by recording spectra for every point of a scan grid. This mapping mode is used to acquire optical images and to locate a particular dot for investigation. Series of measurement on a single QD were normally performed over a long time (from a few days to a week), with the need of daily adjustment in the sub-micrometer range. At low excitation power a single sharp line (E{sub x}) arising from recombination of a single exciton in the dot is observed. Varying the excitation density the spectra become more complex, with appearance of the biexciton emission line (E{sub xx}) on the lower energies side of the E{sub x} line, followed by emission from excitons occupying higher shells in the dot. Measured biexciton binding energies and power dependence are in good agreement with values reported in the literature. The temperature dependence of the optical emission was investigated. The energy shows the characteristic decrease related to the shrinking of the semiconductor band gap, while the linewidth evolution is compatible with broadening due to coupling with acoustic and optical phonons. A statistics of biexciton binding energies over a dozen of dots was acquired and the results compared with single QD spectroscopy data available in the
Chakrabarti, S; Chatterjee, B; Debbarma, S; Ghatak, K P
2015-09-01
In this paper we study the influence of strong electric field on the two dimensional (2D)effective electron mass (EEM) at the Fermi level in quantum wells of III-V, ternary and quaternary semiconductors within the framework of k x p formalism by formulating a new 2D electron energy spectrum. It appears taking quantum wells of InSb, InAs, Hg(1-x)Cd(x)Te and In(1-x)Ga(x)As(1-y)P(y) lattice matched to InP as examples that the EEM increases with decreasing film thickness, increasing electric field and increases with increasing surface electron concentration exhibiting spikey oscillations because of the crossing over of the Fermi level by the quantized level in quantum wells and the quantized oscillation occurs when the Fermi energy touches the sub-band energy. The electric field makes the mass quantum number dependent and the oscillatory mass introduces quantum number dependent mass anisotropy in addition to energy. The EEM increases with decreasing alloy composition where the variations are totally band structure dependent. Under certain limiting conditions all the results for all the cases get simplified into the well-known parabolic energy bands and thus confirming the compatibility test. The content of this paper finds three applications in the fields of nano-science and technology.
Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers
Energy Technology Data Exchange (ETDEWEB)
Korenev, V. V., E-mail: korenev@spbau.ru; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V. [Saint Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation)
2013-10-15
It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots.
Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers
International Nuclear Information System (INIS)
Korenev, V. V.; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.
2013-01-01
It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots
Zhang, Xiang; Dutta, Niloy K.
2018-01-01
We investigate all-optical logic operation in quantum-dot semiconductor optical amplifier (QD-SOA) based Mach-Zehnder interferometer considering the effects of two-photon absorption (TPA). TPA occurs during the propagation of sub-picosecond pulses in QD-SOA, which leads to a change in carrier recovery dynamics in quantum-dots. We utilize a rate equation model to take into account carrier refill through TPA and nonlinear dynamics including carrier heating and spectral hole burning in the QD-SOA. The simulation results show the TPA-induced pumping in the QD-SOA can reduce the pattern effect and increase the output quality of the all-optical logic operation. With TPA, this scheme is suitable for high-speed Boolean logic operation at 320 Gb/s.
DEFF Research Database (Denmark)
Van Driel, A.F.; Nikolaev, I.S.; Vergeer, P.
2007-01-01
We present a statistical analysis of time-resolved spontaneous emission decay curves from ensembles of emitters, such as semiconductor quantum dots, with the aim of interpreting ubiquitous non-single-exponential decay. Contrary to what is widely assumed, the density of excited emitters...... and the intensity in an emission decay curve are not proportional, but the density is a time integral of the intensity. The integral relation is crucial to correctly interpret non-single-exponential decay. We derive the proper normalization for both a discrete and a continuous distribution of rates, where every...... decay component is multiplied by its radiative decay rate. A central result of our paper is the derivation of the emission decay curve when both radiative and nonradiative decays are independently distributed. In this case, the well-known emission quantum efficiency can no longer be expressed...
Pandey, Praveen K.; Sharma, Kriti; Nagpal, Swati; Bhatnagar, P. K.; Mathur, P. C.
2003-11-01
CdTe quantum dots embedded in glass matrix are grown using two-step annealing method. The results for the optical transmission characterization are analysed and compared with the results obtained from CdTe quantum dots grown using conventional single-step annealing method. A theoretical model for the absorption spectra is used to quantitatively estimate the size dispersion in the two cases. In the present work, it is established that the quantum dots grown using two-step annealing method have stronger quantum confinement, reduced size dispersion and higher volume ratio as compared to the single-step annealed samples. (
Quantum interference of ballistic carriers in one-dimensional semiconductor rings
International Nuclear Information System (INIS)
Bagraev, N.T.; Buravlev, A.D.; Klyachkin, L.E.; Malyarenko, A.M.; Ivanov, V.K.; Rykov, S.A.; Shelykh, I.A.
2000-01-01
Quantum interference of ballistic carriers has been studied for the first time, using one-dimensional rings formed by quantum wire pairs in self-assembled silicon quantum wells. Energy dependencies of the transmission coefficient is calculated as a function of the length and modulation of the quantum wire pairs separated by a unified drain-source system or the quantum point contacts. The quantum conductance is predicted to be increased by a factor of four using the unified drain-source system as a result of the quantum interference. Theoretical dependencies are revealed by the quantum conductance oscillations created by the deviations of both the drain-source voltage and external magnetic field inside the silicon one-dimensional rings. The results obtained put forward a basis to create the Aharonov-Bohm interferometer using the silicon one-dimensional ring [ru
Ju, Seongmin; Watekar, Pramod R; Han, Won-Taek
2011-01-31
Germano-silicate glass optical fiber incorporated with PbTe semiconductor quantum dots (SQDs) in the core was fabricated by using the atomization process in modified chemical vapor deposition (MCVD) process. The absorption bands attributed to PbTe semiconductor quantum dots in the fiber core were found to appear at around 687 nm and 1055 nm. The nonlinear refractive index measured by the long-period fiber grating (LPG) pair method upon pumping with laser diode at 976.4 nm was estimated to be ~1.5 × 10(-16) m2/W.
Self-Formed Barrier with Cu-Mn alloy Metallization and its Effects on Reliability
International Nuclear Information System (INIS)
Koike, J.; Wada, M.; Usui, T.; Nasu, H.; Takahashi, S.; Shimizu, N.; Yoshimaru, M.; Shibata, H.
2006-01-01
Advancement of semiconductor devices requires the realization of an ultra-thin (less than 5 nm thick) diffusion barrier layer between Cu interconnect and insulating layers. Self-forming barrier layers have been considered as an alternative barrier structure to the conventional Ta/TaN barrier layers. The present work investigated the possibility of the self-forming barrier layer using Cu-Mn alloy thin films deposited directly on SiO2. After annealing at 450 deg. C for 30 min, an amorphous oxide layer of 3-4 nm in thickness was formed uniformly at the interface. The oxide formation was accompanied by complete expulsion of Mn atoms from the Cu-Mn alloy, leading to a drastic decrease in resistivity of the film. No interdiffusion was observed between Cu and SiO2, indicating an excellent diffusion-barrier property of the interface oxide
Poszwa, A.
2018-05-01
We investigate quantum decoherence of spin states caused by Rashba spin-orbit (SO) coupling for an electron confined to a planar quantum dot (QD) in the presence of a magnetic field (B). The Schrödinger equation has been solved in a frame of second-order perturbation theory. The relationship between the von Neumann (vN) entropy and the spin polarization is obtained. The relation is explicitly demonstrated for the InSb semiconductor QD.
International Nuclear Information System (INIS)
Shankar, Sadasivan; Simka, Harsono; Haverty, Michael
2008-01-01
In the semiconductor industry, the use of new materials has been increasing with the advent of nanotechnology. As critical dimensions decrease, and the number of materials increases, the interactions between heterogeneous materials themselves and processing increase in complexity. Traditionally, applications of ab initio techniques are confined to electronic structure and band gap calculations of bulk materials, which are then used in coarse-grained models such as mesoscopic and continuum models. Density functional theory is the most widely used ab initio technique that was successfully extended to several applications. This paper illustrates applications of density functional theory to semiconductor processes and proposes further opportunities for use of such techniques in process development
Directory of Open Access Journals (Sweden)
Pham Thu Nga
2017-11-01
Full Text Available In this contribution we present an experimental study of 3D opal photonic crystals. The samples are opals constituted by colloidal silica spheres, realized with self-assembly technique. The sphere diameter is selected in order to obtain coupling of the photonic band gap with the emission from CdSe/ZnS colloidal quantum dots. The quantum dots infiltrated in the opals is expected to be enhanced or suppressed depending on the detection angle from the photonic crystal. The structural and optical characterization of the SiO2 opal photonic crystals are performed by field-emission scanning electron microscopy and reflectivity spectroscopy. Measurements performed on samples permits to put into evidence the influence of the different preparation methods on the optical properties. Study of self-activated luminescence of the pure opals is also presented. It is shown that the luminescence of the sample with QDs have original QD emission and not due to the photonic crystal structure. The optical properties of colloidal core-shell semiconductor quantum dots of CdSe/ZnS which are prepared in our lab will be mention.
Rochette, Sophie; Ten Eyck, Gregory A.; Pluym, Tammy; Lilly, Michael P.; Carroll, Malcolm S.; Pioro-Ladrière, Michel
2015-03-01
Silicon quantum dots are promising candidates for quantum information processing as spin qubits with long coherence time. We present electrical transport measurements on a silicon metal-oxide-semiconductor (MOS) double quantum dot (DQD). First, Coulomb diamonds measurements demonstrate the one-electron regime at a relatively high temperature of 1.5 K. Then, the 8 mK stability diagram shows Pauli spin blockade with a large singlet-triplet separation of approximatively 0.40 meV, pointing towards a strong lifting of the valley degeneracy. Finally, numerical simulations indicate that by integrating a micro-magnet to those devices, we could achieve fast spin rotations of the order of 30 ns. Those results are part of the recent body of work demonstrating the potential of Si MOS DQD as reliable and long-lived spin qubits that could be ultimately integrated into modern electronic facilities. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. DOE's National Nuclear Security Administration under Contract DE-AC04-94AL85000.
The diamagnetic susceptibility of a donor in a semiconductor core shell quantum dot
Energy Technology Data Exchange (ETDEWEB)
Sudharshan, M. S.; Subhash, P.; Shaik, Nagoor Babu [Department of Mechanical Engineering, Saveetha School of Engineering, Saveetha University, Thandalam, Chennai – 602105 (India); Kalpana, P.; Jayakumar, K. [Department of Physics, Gandhigram Rural University, Gandhigram, Tamilnadu-624302 (India); Reuben, A. Merwyn Jasper D., E-mail: merwyn@gmail.com [Department of Physics, Saveetha School of Engineering, Saveetha University, Thandalam, Chennai – 602105 (India)
2015-06-24
The effect of Aluminium concentration, shell thickness and size of the core shell Quantum Dot on the Diamagnetic Susceptibility of a donor in the Core Shell Quantum Dot is calculated in the effective mass approximation using the variational method. The results are presented and discussed.
The diamagnetic susceptibility of a donor in a semiconductor core shell quantum dot
Sudharshan, M. S.; Subhash, P.; Shaik, Nagoor Babu; Kalpana, P.; Jayakumar, K.; Reuben, A. Merwyn Jasper D.
2015-06-01
The effect of Aluminium concentration, shell thickness and size of the core shell Quantum Dot on the Diamagnetic Susceptibility of a donor in the Core Shell Quantum Dot is calculated in the effective mass approximation using the variational method. The results are presented and discussed.
Atomic scale study of intrinsic and Mn doped quantum dots in III-V semiconductors
Bozkurt, M.
2011-01-01
In this thesis, a Cross Sectional Scanning Tunneling Microscope (X-STM) is used to investigate nanostructures in IIIV semiconductors and single Mn impurities in bulk GaAs. The atomic resolution which can be achieved with X-STM makes it possible to link structural properties of nanostructures to
Spin physics in semiconductors
Dyakonov, Mikhail I
2008-01-01
This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.
ZnS semiconductor quantum dots production by an endophytic fungus Aspergillus flavus
Energy Technology Data Exchange (ETDEWEB)
Uddandarao, Priyanka, E-mail: uddandaraopriyanka@gmail.com; B, Raj Mohan, E-mail: rajmohanbala@gmail.com
2016-05-15
Graphical abstract: - Highlights: • Endophytic fungus Aspergillus flavus isolated from a medicinal plant Nothapodytes foetida was used for the synthesis of quantum dots. • Morris-Weber kinetic model and Lagergren's pseudo-first-order rate equation were used to study the biosorption kinetics. • Polycrystalline ZnS quantum dots of 18 nm and 58.9 nm from TEM and DLS, respectively. - Abstract: The development of reliable and eco-friendly processes for the synthesis of metal sulphide quantum dots has been considered as a major challenge in the field of nanotechnology. In the present study, polycrystalline ZnS quantum dots were synthesized from an endophytic fungus Aspergillus flavus. It is noteworthy that apart from being rich sources of bioactive compounds, endophytic fungus also has the ability to mediate the synthesis of nanoparticles. TEM and DLS revealed the formation of spherical particles with an average diameter of about 18 nm and 58.9 nm, respectively. The ZnS quantum dots were further characterized using SEM, EDAX, XRD, UV–visible spectroscopy and FTIR. The obtained results confirmed the synthesis of polycrystalline ZnS quantum dots and these quantum dots are used for studying ROS activity. In addition this paper explains kinetics of metal sorption to study the role of biosorption in synthesis of quantum dots by applying Morris-Weber kinetic model. Since Aspergillus flavus is isolated from a medicinal plant Nothapodytes foetida, quantum dots synthesized from this fungus may have great potential in broad environmental and medical applications.
Directory of Open Access Journals (Sweden)
Sarwat B. Rizvi
2010-08-01
Full Text Available Over the years, biological imaging has seen many advances, allowing scientists to unfold many of the mysteries surrounding biological processes. The ideal imaging resolution would be in nanometres, as most biological processes occur at this scale. Nanotechnology has made this possible with functionalised nanoparticles that can bind to specific targets and trace processes at the cellular and molecular level. Quantum dots (QDs or semiconductor nanocrystals are luminescent particles that have the potential to be the next generation fluorophores. This paper is an overview of the basics of QDs and their role as fluorescent probes for various biological imaging applications. Their potential clinical applications and the limitations that need to be overcome have also been discussed.
International Nuclear Information System (INIS)
Nishibayashi, K.; Aoshima, I.; Souma, I.; Murayama, A.; Oka, Y.
2006-01-01
Dynamics of spin injection has been investigated in a double quantum well (DQW) composed of a diluted magnetic semiconductor by the pump-probe transient absorption spectroscopy in magnetic field. The DQW consists of a non-magnetic well (NMW) of CdTe and a magnetic well (MW) of Cd 0.92 Mn 0.08 Te. The MW shows a transient absorption saturation in the exciton band for more than 200 ps after the optical pumping, while the exciton photoluminescence does not arise from the MW. In the NMW, the circular polarization degree of the transient absorption saturation shows an increase with increasing time. The results are interpreted by the individual tunneling of spin-polarized electrons and holes from the MW to the NMW with different tunneling times. Depolarization processes of the carrier spins in the MW and the NMW are also discussed
Andreev, S. V.; Nalitov, A. V.
2018-04-01
We present a theoretical model of a driven-dissipative spin-orbit coupled Bose-Einstein condensate of indirect excitons in semiconductor quantum wells (QW's). Our steady-state solution of the problem shares analogies with the Hanle effect in an optical orientation experiment. The role of the spin pump in our case is played by Bose-stimulated scattering into a linearly-polarized ground state and the depolarization occurs as a result of exchange interaction between electrons and holes. Our theory agrees with the recent experiment [A. A. High et al., Phys. Rev. Lett. 110, 246403 (2013), 10.1103/PhysRevLett.110.246403], where spontaneous emergence of spatial coherence and polarization textures have been observed. As a complementary test, we discuss a configuration where an external magnetic field is applied in the structure plane.
International Nuclear Information System (INIS)
Zeghuzi, A.; Schmeckebier, H.; Stubenrauch, M.; Bimberg, D.; Meuer, C.; Schubert, C.; Bunge, C.-A.
2015-01-01
Error-free generation of 25-Gbit/s differential phase-shift keying (DPSK) signals via direct modulation of InAs quantum-dot (QD) based semiconductor optical amplifiers (SOAs) is experimentally demonstrated with an input power level of −5 dBm. The QD SOAs emit in the 1.3-μm wavelength range and provide a small-signal fiber-to-fiber gain of 8 dB. Furthermore, error-free DPSK modulation is achieved for constant optical input power levels from 3 dBm down to only −11 dBm for a bit rate of 20 Gbit/s. Direct phase modulation of QD SOAs via current changes is thus demonstrated to be much faster than direct gain modulation
Li, Jian-Bo; Xiao, Si; Liang, Shan; He, Meng-Dong; Luo, Jian-Hua; Kim, Nam-Chol; Chen, Li-Qun
2017-10-16
We perform a theoretical study of the bistable four-wave mixing (FWM) response in a coupled system comprised of a semiconductor quantum dot (SQD) and a photonic crystal (PC) nanocavity in which the SQD is embedded. It is shown that the shape of the FWM spectrum can switch among single-peaked, double-peaked, triple-peaked, and four-peaked arising from the vacuum Rabi splitting and the exciton-nanocavity coupling. Especially, we map out bistability phase diagrams within a parameter subspace of the system, and find that it is easy to turn on or off the bistable FWM response by only adjusting the excitation frequency or the pumping intensity. Our results offer a feasible means for measuring the SQD-PC nanocavity coupling strength and open a new avenue to design optical switches and memories.
Measurements of gain and index dynamics in quantum dash semiconductor optical amplifiers
DEFF Research Database (Denmark)
Poel, Mike van der; Berg, Tommy Winther; Mørk, Jesper
2004-01-01
Ultrafast gain and index recovery of a 1.5um quantum dash amplifier after short pulse amplification is measured using pump-probe spectroscopy. The major part of the gain reduction is found to recover within a few picoseconds....
Resonance fluorescence revival in a voltage-controlled semiconductor quantum dot
Reigue, Antoine; Lemaître, Aristide; Gomez Carbonell, Carmen; Ulysse, Christian; Merghem, Kamel; Guilet, Stéphane; Hostein, Richard; Voliotis, Valia
2018-02-01
We demonstrate systematic resonance fluorescence recovery with near-unity emission efficiency in single quantum dots embedded in a charge-tunable device in a wave-guiding geometry. The quantum dot charge state is controlled by a gate voltage, through carrier tunneling from a close-lying Fermi sea, stabilizing the resonantly photocreated electron-hole pair. The electric field cancels out the charging/discharging mechanisms from nearby traps toward the quantum dots, responsible for the usually observed inhibition of the resonant fluorescence. Fourier transform spectroscopy as a function of the applied voltage shows a strong increase in the coherence time though not reaching the radiative limit. These charge controlled quantum dots can act as quasi-perfect deterministic single-photon emitters, with one laser pulse converted into one emitted single photon.
Spin-flip transitions between Zeeman sublevels in semiconductor quantum dots
International Nuclear Information System (INIS)
Khaetskii, Alexander V.; Nazarov, Yuli V.
2001-01-01
We have studied spin-flip transitions between Zeeman sublevels in GaAs electron quantum dots. Several different mechanisms which originate from spin-orbit coupling are shown to be responsible for such processes. It is shown that spin-lattice relaxation for the electron localized in a quantum dot is much less effective than for the free electron. The spin-flip rates due to several other mechanisms not related to the spin-orbit interaction are also estimated
Relaxation of electron energy in the polar semiconductor double quantum dots
Czech Academy of Sciences Publication Activity Database
Král, Karel; Khás, Zdeněk; Zdeněk, Petr; Čerňanský, Marian; Lin, C. Y.
2002-01-01
Roč. 314, - (2002), s. 490-493 ISSN 0921-4526 R&D Projects: GA AV ČR IAA1010113; GA MŠk OC P5.20 Institutional research plan: CEZ:AV0Z1010914 Keywords : quantum dots * relaxation * double quantum dots * electron-photon interaction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.609, year: 2002
Quantum-dot temperature profiles during laser irradiation for semiconductor-doped glasses
International Nuclear Information System (INIS)
Nagpal, Swati
2002-01-01
Temperature profiles around laser irradiated CdX (X=S, Se, and Te) quantum dots in borosilicate glasses were theoretically modeled. Initially the quantum dots heat up rapidly, followed by a gradual increase of temperature. Also it is found that larger dots reach higher temperatures for the same pulse characteristics. After the pulse is turned off, the dots initially cool rapidly, followed by a gradual decrease in temperature
Quantum-dot temperature profiles during laser irradiation for semiconductor-doped glasses
Nagpal, Swati
2002-12-01
Temperature profiles around laser irradiated CdX (X=S, Se, and Te) quantum dots in borosilicate glasses were theoretically modeled. Initially the quantum dots heat up rapidly, followed by a gradual increase of temperature. Also it is found that larger dots reach higher temperatures for the same pulse characteristics. After the pulse is turned off, the dots initially cool rapidly, followed by a gradual decrease in temperature.
Debray, Philippe; Shorubalko, Ivan; Xu, Hongqi
2007-03-01
We have studied polarized spin transport in a device consisting of three quantum point contacts (QPCs) in series made on InGaAs/InP quantum-well (QW) structures. The QPCs were created by independent pairs of side gates, each pair for one QPC. By adjusting the bias voltages of the side gates, the widths of the QPCs are independently tuned to have transport in the fundamental mode. An external magnetic field of a few T causes spin splitting of the lowest one-dimensional (1D) subbands. The widths of the end QPCs are adjusted to position the Fermi level in the spin-split energy gap, while that of the central QPC is kept wide enough to populate both spin-split bands. Measurement of the conductance of the end QPCs at low temperatures (spinFET.
Seo, Hosung; Ma, He; Govoni, Marco; Galli, Giulia
2017-12-01
The development of novel quantum bits is key to extending the scope of solid-state quantum-information science and technology. Using first-principles calculations, we propose that large metal ion-vacancy pairs are promising qubit candidates in two binary crystals: 4 H -SiC and w -AlN. In particular, we found that the formation of neutral Hf- and Zr-vacancy pairs is energetically favorable in both solids; these defects have spin-triplet ground states, with electronic structures similar to those of the diamond nitrogen-vacancy center and the SiC divacancy. Interestingly, they exhibit different spin-strain coupling characteristics, and the nature of heavy metal ions may allow for easy defect implantation in desired lattice locations and ensure stability against defect diffusion. To support future experimental identification of the proposed defects, we report predictions of their optical zero-phonon line, zero-field splitting, and hyperfine parameters. The defect design concept identified here may be generalized to other binary semiconductors to facilitate the exploration of new solid-state qubits.
Coherent coupling of two different semiconductor quantum dots via an optical cavity mode
Energy Technology Data Exchange (ETDEWEB)
Laucht, Arne; Villas-Boas, Jose M.; Hauke, Norman; Hofbauer, Felix; Boehm, Gerhard; Kaniber, Michael; Finley, Jonathan J. [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany)
2010-07-01
We present a combined experimental and theoretical study of a strongly coupled system consisting of two spatially separated self-assembled InGaAs quantum dots and a single optical nanocavity mode. Due to their different size and strain profile, the two dots exhibit markedly different electric field dependences due to the quantum confined Stark effect. This allows us to tune them into resonance simply by changing the applied bias voltage and to independently tune them into the photonic crystal nanocavity mode. Photoluminescence measurements show a characteristic triple peak during the double anticrossing, which is a clear signature of a coherently coupled system of three quantum states. We fit the emission spectra of the coupled system to theory and are able to investigate the coupling between the two quantum dots directly via the cavity mode. Furthermore, we investigate the coupling between the two quantum dots when they are detuned from the cavity mode in a V-system where dephasing due to incoherent losses from the cavity mode can be reduced.
Coherent coupling of two different semiconductor quantum dots via an optical cavity mode
Energy Technology Data Exchange (ETDEWEB)
Villas-Boas, Jose M. [Universidade Federal de Uberlandia (UFU), MG (Brazil). Inst. de Fisica; Laucht, Arne; Hauke, Norman; Hofbauer, Felix; Boehm, Gerhard; Kaniber, Michael; Finley, Jonathan J. [Technische Universitaet Muenchen, Garching (Germany). Walter Schottky Inst.
2011-07-01
Full text. We present a combined experimental and theoretical study of a strongly coupled system consisting of two spatially separated self-assembled InGaAs quantum dots and a single optical nano cavity mode. Due to their different size and strain profile, the two dots exhibit markedly different electric field dependences due to the quantum confined Stark effect. This allows us to tune them into resonance simply by changing the applied bias voltage and to independently tune them into the photonic crystal nano cavity mode. Photoluminescence measurements show a characteristic triple peak during the double anti crossing, which is a clear signature of a coherently coupled system of three quantum states. We fit the emission spectra of the coupled system to theory and are able to investigate the coupling between the two quantum dots directly via the cavity mode. Furthermore, we investigate the coupling between the two quantum dots when they are detuned from the cavity mode in a V-system where dephasing due to incoherent losses from the cavity mode can be reduced
Li, Jingrui; Kondov, Ivan; Wang, Haobin; Thoss, Michael
2015-04-10
A recently developed methodology to simulate photoinduced electron transfer processes at dye-semiconductor interfaces is outlined. The methodology employs a first-principles-based model Hamiltonian and accurate quantum dynamics simulations using the multilayer multiconfiguration time-dependent Hartree approach. This method is applied to study electron injection in the dye-semiconductor system coumarin 343-TiO2. Specifically, the influence of electronic-vibrational coupling is analyzed. Extending previous work, we consider the influence of Dushinsky rotation of the normal modes as well as anharmonicities of the potential energy surfaces on the electron transfer dynamics.
Optical coefficients in a semiconductor quantum ring: Electric field and donor impurity effects
Duque, C. M.; Acosta, Ruben E.; Morales, A. L.; Mora-Ramos, M. E.; Restrepo, R. L.; Ojeda, J. H.; Kasapoglu, E.; Duque, C. A.
2016-10-01
The electron states in a two-dimensional quantum dot ring are calculated in the presence of a donor impurity atom under the effective mass and parabolic band approximations. The effect of an externally applied electric field is also taken into account. The wavefunctions are obtained via the exact diagonalization of the problem Hamiltonian using a 2D expansion within the adiabatic approximation. The impurity-related optical response is analyzed via the optical absorption, relative refractive index change and the second harmonics generation. The dependencies of the electron states and these optical coefficients with the changes in the configuration of the quantum ring system are discussed in detail.
Conductance enhancement in quantum-point-contact semiconductor-superconductor devices
DEFF Research Database (Denmark)
Mortensen, Asger; Jauho, Antti-Pekka; Flensberg, Karsten
1999-01-01
We present numerical calculations of the conductance of an interface between a phase-coherent two-dimensional electron gas and a superconductor with a quantum point contact in the normal region. Using a scattering matrix approach we reconsider the geometry of De Raedt, Michielsen, and Klapwijk...... [Phys. Rev. B 50, 631 (1994)] which was studied within the time-dependent Bogoliubov-de Gennes formalism. We find that the factor-of-2 enhancement of the conductance G(NS) compared to the normal state conductance GN for ideal interfaces may be suppressed for interfaces with a quantum point contact...
Energy Technology Data Exchange (ETDEWEB)
Dacal, Luis Carlos Ogando
2001-08-01
A physical system where indistinguishable particles interact with each other creates the possibility of studying correlation and exchange effect. The simplest system is that one with only two indistinguishable particles. In condensed matter physics, these complexes are represented by charged excitons, donors and acceptors. In quantum wells, the valence band is not parabolic, therefore, the negatively charged excitons and donors are theoretically described in a simpler way. Despite the fact that the stability of charged excitons (trions) is known since the late 50s, the first experimental observation occurred only at the early 90s in quantum well samples, where their binding energies are one order of magnitude larger due to the one dimensional carriers confinement. After this, these complexes became the subject of an intense research because the intrinsic screening of electrical interactions in semiconductor materials allows that magnetic fields that are usual in laboratories have strong effects on the trion binding energy. Another rich possibility is the study of trions as an intermediate state between the neutral exciton and the Fermi edge singularity when the excess of doping carriers is increased. In this thesis, we present a theoretical study of charged excitons and negatively charged donors in GaAs/Al{sub 0.3}Ga{sub 0.7}As quantum wells considering the effects of external electric and magnetic fields. We use a simple, accurate and physically clear method to describe these systems in contrast with the few and complex treatments s available in the literature. Our results show that the QW interface defects have an important role in the trion dynamics. This is in agreement with some experimental works, but it disagrees with other ones. (author)
Weber, Eicke R; Liu, H C
1999-01-01
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Pro
Electronic and excitonic properties of self-assembled semiconductor quantum rings
Fomin, V.M.; Gladilin, V.N.; Devreese, J.T.; Blokland, J.H.; Christianen, P.C.M.; Maan, J.C.; Taboada, A.G.; Granados, D.; Garcia, J.M.; Kleemans, N.A.J.M.; Genuchten, van H.C.M.; Bozkurt, M.; Koenraad, P.M.; Wixforth, A.; Lorke, A.
2009-01-01
Theoretical analysis of the electron energy spectrum and the magnetization in a strained InxGa1-xAs/GaAs selfassembled quantum ring (SAQR) is performed using realistic parameters, determined from the cross-sectional scanning-tunneling microscopy characterization. The Aharonov-Bohm oscillations in
Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser
Grave, I.; Kan, S. C.; Griffel, G.; Wu, S. W.; Sa'Ar, A.
1991-01-01
A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two-state optical memory is demonstrated.
DEFF Research Database (Denmark)
Nielsen, Per Kær; Nielsen, Torben Roland; Lodahl, P.
2012-01-01
of the physics and emphasize the important role played by the effective phonon density, describing the availability of phonons for scattering, in quantum dot decay dynamics. Based on the analytical expressions, we present the parameter regimes where phonon effects are expected to be important. Also, we include...
Quantum-tomographic cryptography with a semiconductor single-photon source
International Nuclear Information System (INIS)
Kaszlikowski, D.; Yang, L.J.; Yong, L.S.; Willeboordse, F.H.; Kwek, L.C.
2005-01-01
We analyze the security of so-called quantum-tomographic cryptography with the source producing entangled photons via an experimental scheme proposed by Fattal et al. [Phys. Rev. Lett. 92, 37903 (2004)]. We determine the range of the experimental parameters for which the protocol is secure against the most general incoherent attacks
Absence of quantized energy-states local diffusion in semiconductor quantum-dash structures
Tan, Cheeloon
2010-01-01
We present an analysis of InAs/InAlGaAs/InP quantum-dash structures utilizing different degrees of postgrowth-lattice-disordering. The observation of digital transitions among quantized states discards the origins of multiple excited states from a single group of dash ensembles.
Phase-dependent optical bistability and multistability in a semiconductor quantum well system
International Nuclear Information System (INIS)
Wang Zhiping; Fan Hongyi
2010-01-01
We theoretically investigate the hybrid absorptive-dispersive optical bistability and multistability in a four-level inverted-Y quantum well system inside a unidirectional ring cavity. We find that the coupling field, the pumping field as well as the cycling field can affect the optical bistability and multistability dramatically, which can be used to manipulate efficiently the threshold intensity and the hysteresis loop. The effects of the relative phase and the electronic cooperation parameter on the OB and OM are also studied. Our study is much more practical than its atomic counterpart due to its flexible design and the wide adjustable parameters. Thus, it may provide some new possibilities for technological applications in optoelectronics and solid-state quantum information science.
Directory of Open Access Journals (Sweden)
Ningning Zhang
2015-01-01
Full Text Available Doped films of TiO2/PbS/CdS have been prepared by successive ionic layer adsorption and reaction (SILAR method. Bi- and Ag-doped-PbS quantum dot (QD were produced by admixing Bi3+ or Ag+ during deposition and the existing forms of the doping element in PbS QD were analyzed. The results show that Bi3+ entered the cube space of PbS as donor yielding interstitial doping Bi-doped-PbS QD, while Ag+ replaced Pb2+ of PbS as acceptor yielding substitutional doping Ag-doped-PbS QD. The novel Bi-doped-PbS/CdS and Ag-doped-PbS/CdS quantum dot cosensitized solar cell (QDCSC were fabricated and power conversion efficiency (PCE of 2.4% and 2.2% was achieved, respectively, under full sun illumination.
Michalak, D. J.; Bruno, A.; Caudillo, R.; Elsherbini, A. A.; Falcon, J. A.; Nam, Y. S.; Poletto, S.; Roberts, J.; Thomas, N. K.; Yoscovits, Z. R.; Dicarlo, L.; Clarke, J. S.
Experimental quantum computing is rapidly approaching the integration of sufficient numbers of quantum bits for interesting applications, but many challenges still remain. These challenges include: realization of an extensible design for large array scale up, sufficient material process control, and discovery of integration schemes compatible with industrial 300 mm fabrication. We present recent developments in extensible circuits with vertical delivery. Toward the goal of developing a high-volume manufacturing process, we will present recent results on a new Josephson junction process that is compatible with current tooling. We will then present the improvements in NbTiN material uniformity that typical 300 mm fabrication tooling can provide. While initial results on few-qubit systems are encouraging, advanced processing control is expected to deliver the improvements in qubit uniformity, coherence time, and control required for larger systems. Research funded by Intel Corporation.
Shanker, A.; Bhowmik, D.; Bhattacharya, T. K.
2010-01-01
We aim to analytically arrive at a beam splitter formulation for electron waves. The electron beam splitter is an essential component of quantum logical devices. To arrive at the beam splitter structure, the electrons are treated as waves, i.e. we assume the transport to be ballistic. Ballistic electrons are electrons that travel over such short distances that their phase coherence is maintained. For mesoscopic devices with size smaller than the mean free path, the phase relaxation length and...
Ultrafast spectral interferometry of resonant secondary emmission from semiconductor quantum wells
DEFF Research Database (Denmark)
Birkedal, Dan; Shah, Jagdeep
1999-01-01
Recent investigations of secondary emission from quantum well excitons follwing resonant excitation have demonstrated an intricate interplay of coherent Rayleigh scattering and incoherent luminescence. We have very recently demonstrated that it is possible to isolate and time resolve the coherent...... field associated with the Rayleigh component using ultrafast spectral interferometry, thus, obtaining substantial and new information of the nature of resonant secondary emission. Our findings demonstrate that Rayleigh scattering from static disorder is inherently a non-ergodic process invalidating...
Extreme Soft Limit Observation of Quantum Hall Effect in a 3-d Semiconductor
Bleiweiss, Michael; Yin, Ming; Amirzadeh, Jafar; Preston, Harry; Datta, Timir
2004-03-01
We report on the evidence for quantum hall effect at 38K and in magnetic fields (B) as low as 1k-Orsted. Our specimens were semiconducting, carbon replica opal (CRO) structures. CRO are three dimensional bulk systems where the carbon is grown by CVD into the porous regions in artificial silica opals. The carbon forms layers on top of the silica spheres as eggshells. The shells are of uneven thickness and are perforated at the contacts points of the opal spheres and form a closed packed, three dimensional crystal structure. Plateaus in inverse R_xy that are conjugated with well-defined Subnikov-deHass modulations in R_xx were observed. The quantum steps that are particularly prominent were the states with fill factors v = p/q (p,q are integers) were the well know fractions, 1/3, 1/2, 3/5, 1 and 5/2. QHE steps indicate that the carriers are localized in two-dimensional regions, which may be due to the extremely large surface to volume ratio associated with replica opal structure. From the B-1 vs v straight line, the effective surface carrier density, ns = 2.2 x 10^14 m-2. To the best of our knowledge, the current work is the first to report fractional quantum hall plateaus in a bulk system.
Mageshwari, P. Uma; Peter, A. John; Lee, Chang Woo; Duque, C. A.
2016-07-01
Excitonic properties are studied in a strained Ga1-xInxNyAs1-y/GaAs cylindrical quantum dot. The optimum condition for the desired band alignment for emitting wavelength 1.55 μm is investigated using band anticrossing model and the model solid theory. The band gap and the band discontinuities of a Ga1-xInxNyAs1-y/GaAs quantum dot on GaAs are computed with the geometrical confinement effect. The binding energy of the exciton, the oscillator strength and its radiative life time for the optimum condition are found taking into account the spatial confinement effect. The effects of geometrical confinement and the nitrogen incorporation on the interband emission energy are brought out. The result shows that the desired band alignment for emitting wavelength 1.55 μm is achieved for the inclusion of alloy contents, y=0.0554% and x=0.339% in Ga1-xInxNyAs1-y/GaAs quantum dot. And the incorporation of nitrogen and indium shows the red-shift and the geometrical confinement shows the blue-shift. And it can be applied for fibre optical communication networks.
High intensity mid infra-red spectroscopy of intersubband transitions in semiconductor quantum wells
International Nuclear Information System (INIS)
Serapiglia, G.B.
2000-01-01
High intensity (10 8 Wcm -2 ) mid-infrared spectroscopy has been used to study the optical response of intersubband transitions in InGaAs/InAlAs quantum wells with three conduction subbands. Steady state optical pumping of 2 x 10 11 cm -2 electrons into the excited vertical bar2> subband and subsequent electron relaxation (via phonon emission) back to the ground vertical bar1> subband creates a non-equilibrium phonon population (phonon occupancy∼1 at T=30K). Phonon re-absorption leads to a non-thermal electron distribution where electron-phonon scattering rates ∼200-500fs -1 are much faster than electron-electron scattering. In this regime, the intersubband absorption is inhomogeneously broadened. For substantially weaker optical pumping (∼1 saturation intensity) however, the electron distribution is able to thermalise and the absorption is homogeneously broadened. The phenomenon of electromagnetically-induced quantum coherence is demonstrated between 3 confined electron subband levels in a quantum well which are almost equally spaced in energy. Applying a strong coupling field, two-photon-resonant with the 1-3 intersubband transition, produces a pronounced narrow transparency feature in the 1-2 absorption line. This result can be understood in terms of all 3 states being simultaneously driven into ''phase-locked'' quantum coherence by a single coupling field. We describe the effect theoretically with a density matrix method and an adapted linear response theory. Efficient (∼1%) second harmonic generation, resonantly enhanced near λ=8.6μm, has been observed in asymmetric double multi-quantum well (ADQW) structures. Both waveguide mode and 45 deg. wedge multi-bounce geometries were used. The phase matching in the waveguide mode was achieved by incorporating a separate multiple QW region which modifies (via Kramers-Kronig relation) the dispersion of light. In the case of the 45 deg. wedge geometry, the phases of second harmonic waves generated at sequential
Transmission resonances in a semiconductor-superconductor junction quantum interference structure
International Nuclear Information System (INIS)
Takagaki, Y.; Tokura, Y.
1996-01-01
Transport properties in a quantum resonator structure of a normal-conductor endash superconductor (NS) junction are calculated. Quasiparticles in a cavity region undergo multiple reflections due to an abrupt change in the width of the wire and the NS interface. Quantum interference of the reflections modulates the nominal normal reflection probability at the NS boundary. We show that various NS structures can be regarded as the quantum resonator because of the absence of propagation along the NS interface. When the incident energy coincides with the quasibound state energy levels, the zero-voltage conductance exhibits peaks for small voltages applied to the NS junction. The transmission peaks change to dips of nearly perfect reflection when the applied voltage exceeds a critical value. Two branches of the resonance, which are roughly characterized by electron and hole wavelengths, emerge from the individual dip, and the energy difference between them increases with increasing voltage. The electronlike and holelike resonance dips originating from different quasibound states at zero-voltage cross one after another when the voltage approaches the superconducting gap. We find that both crossing and anticrossing can be produced. It is shown that the individual resonance state in the NS system is associated with two zeros and two poles in the complex energy plane. The behavior of the resonance is explained in terms of splitting and merging of the zero-pole pairs. We examine the Green close-quote s function of a one-dimensional NS system in order to find out how the transmission properties are influenced by the scattering from the NS interface. copyright 1996 The American Physical Society
Decoherence processes during optical manipulation of excitonic qubits in semiconductor quantum dots
Wang, Q. Q.; Muller, A.; Bianucci, P.; Rossi, E.; Xue, Q. K.; Takagahara, T.; Piermarocchi, C.; MacDonald, A. H.; Shih, C. K.
2005-07-01
Using photoluminescence spectroscopy, we have investigated the nature of Rabi oscillation damping during optical manipulation of excitonic qubits in self-assembled quantum dots. Rabi oscillations were recorded by varying the pulse amplitude for fixed pulse durations between 4ps and 10ps . Up to five periods are visible, making it possible to quantify the excitation dependent damping. We find that this damping is more pronounced for shorter pulse widths and show that its origin is the nonresonant excitation of carriers in the wetting layer, most likely involving bound-to-continuum and continuum-to-bound transitions.
Theory of resonant donor-impurity magnetopolaron in semiconductor quantum wells
International Nuclear Information System (INIS)
Osorio, F.A.P.; Maialle, M.Z.; Hipolito, O.
1989-11-01
We report for the first time a theoretical calculation for the resonant donor impurity magnetopolaron in GaAs-GA 1-x Al x As quantum-well structures. The intra donor 1s → 2p, transition frequencies are calculated as a function of the magnetic field, by taking into account the polaron effects and nonparabolicity of the conduction band. We found a pinning behaviour due to interaction with LO phonons as suggested by the experimentalists. Our results for the peak positions of those transitions are in very good agreement with recent experimental data. (author). 18 refs, 1 fig
DEFF Research Database (Denmark)
Hensel, V.; Godt, A.; Popovitz-Biro, R.
2002-01-01
Composite materials of quantum particles (Q-particles) arranged in layers within crystalline powders of pi-conjugated, rodlike dicarboxylic acids are reported. The synthesis of the composites, either as three-dimensional crystals or as thin films at the air-water interface, comprises a two...... analysis of the solids and grazing incidence X-ray diffraction analysis of the films on water. 2) Topotactic solid/gas reaction of these salts with H2S to convert the metal ions into Q-particles of CdS or PbS embedded in the organic matrix that consists of the acids 6(H) and 8(H). These hybrid materials...
Directory of Open Access Journals (Sweden)
Eremchev M. Yu.
2015-01-01
Full Text Available In this research a relation between the accuracy of restoration of the single quantum dots (QD CdSe/CdS/ZnS cross-cut coordinates and luminescence intensity was investigated. It was shown that the limit of the accuracy of determining the coordinates of a single QD for a considerable total amount of registered photons approaches its limiting value that is comparable to the size of the QD. It also means that the installation used in the research is mechanically stable enough to reach the limiting values of determination accuracy of point emitters coordinates.
Rose, Brendon Charles
This thesis is focused on the characterization of highly coherent defects in both silicon and diamond, particularly in the context of quantum memory applications. The results are organized into three parts based on the spin system: phosphorus donor electron spins in silicon, negatively charged nitrogen vacancy color centers in diamond (NV-), and neutrally charged silicon vacancy color centers in diamond (SiV0). The first part on phosphorus donor electron spins presents the first realization of strong coupling with spins in silicon. To achieve this, the silicon crystal was made highly pure and highly isotopically enriched so that the ensemble dephasing time, T2*, was long (10 micros). Additionally, the use of a 3D resonator aided in realizing uniform coupling, allowing for high fidelity spin ensemble manipulation. These two properties have eluded past implementations of strongly coupled spin ensembles and have been the limiting factor in storing and retrieving quantum information. Second, we characterize the spin properties of the NV- color center in diamond in a large magnetic field. We observe that the electron spin echo envelope modulation originating from the central 14N nuclear spin is much stronger at large fields and that the optically induced spin polarization exhibits a strong orientation dependence that cannot be explained by the existing model for the NV- optical cycle, we develop a modification of the existing model that reproduces the data in a large magnetic field. In the third part we perform characterization and stabilization of a new color center in diamond, SiV0, and find that it has attractive, highly sought-after properties for use as a quantum memory in a quantum repeater scheme. We demonstrate a new approach to the rational design of new color centers by engineering the Fermi level of the host material. The spin properties were characterized in electron spin resonance, revealing long spin relaxation and spin coherence times at cryogenic
Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Kawanishi, Tetsuya
2016-04-01
A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed with T-band (1.0 µm waveband) and O-band (1.3 µm waveband) QD optical gain materials for Gbps-order, high-speed optical data generation. The insertion loss due to coupling between the device and the optical fiber was effectively compensated for by the SOA section. It was also confirmed that the monolithic QD-OGM/SOA device enabled >4.8 Gbps optical data generation with a clear eye opening in the T-band. Furthermore, we successfully demonstrated error-free 4.8 Gbps optical data transmissions in each of the six wavelength channels over a 10-km-long photonic crystal fiber using the monolithic QD-OGM/SOA device in multiple O-band wavelength channels, which were generated by the single QD gain chip. These results suggest that the monolithic QD-OGM/SOA device will be advantageous in ultra-broadband optical frequency systems that utilize the T+O-band for short- and medium-range optical communications.
DEFF Research Database (Denmark)
Zhang, Aihua; Peng, Mingzeng; Willatzen, Morten
2017-01-01
The mechanism of strain-dependent luminescence is important for the rational design of pressure-sensing devices. The interband momentum-matrix element is the key quantity for understanding luminescent phenomena. We analytically solved an infinite quantum well (IQW) model with strain, in the frame......The mechanism of strain-dependent luminescence is important for the rational design of pressure-sensing devices. The interband momentum-matrix element is the key quantity for understanding luminescent phenomena. We analytically solved an infinite quantum well (IQW) model with strain......, in the framework of the 6 × 6 k·p Hamiltonian for the valence states, to directly assess the interplay between the spin-orbit coupling and the strain-induced deformation potential for the interband momentum-matrix element. We numerically addressed problems of both the infinite and IQWs with piezoelectric fields...... to elucidate the effects of the piezoelectric potential and the deformation potential on the strain-dependent luminescence. The experimentally measured photoluminescence variatio½n as a function of pressure can be qualitatively explained by the theoretical results....
Enriching 28Si beyond 99.9998 % for semiconductor quantum computing
Dwyer, K. J.; Pomeroy, J. M.; Simons, D. S.; Steffens, K. L.; Lau, J. W.
2014-08-01
Using a laboratory-scale apparatus, we enrich 28Si and produce material with 40 times less residual 29Si than previously reported. Starting from natural abundance silane gas, we offer an alternative to industrial gas centrifuges for providing materials critical for long spin coherence times in quantum information devices. Using a mass spectrometry approach, silicon ions are produced from commercial silane gas and the isotopes are separated in a magnetic sector analyzer before deposition onto a Si(1 0 0) substrate. Isotope fractions for 29Si and 30Si of <1 × 10-6 are found in the deposited films using secondary ion mass spectrometry. Additional assessments of the deposited films are also presented as we work to develop substrates and source material to support the growing silicon quantum computing community. Finally, we demonstrate modulation of the 29Si concentration in a deposited film as a precursor to dual enrichment of heterostructures and compound materials such as 28Si74Ge.
Toma, Andrea
2015-01-14
Terahertz spectroscopy has vast potentialities in sensing a broad range of elementary excitations (e.g., collective vibrations of molecules, phonons, excitons, etc.). However, the large wavelength associated with terahertz radiation (about 300 μm at 1 THz) severely hinders its interaction with nano-objects, such as nanoparticles, nanorods, nanotubes, and large molecules of biological relevance, practically limiting terahertz studies to macroscopic ensembles of these compounds, in the form of thick pellets of crystallized molecules or highly concentrated solutions of nanomaterials. Here we show that chains of terahertz dipole nanoantennas spaced by nanogaps of 20 nm allow retrieving the spectroscopic signature of a monolayer of cadmium selenide quantum dots, a significant portion of the signal arising from the dots located within the antenna nanocavities. A Fano-like interference between the fundamental antenna mode and the phonon resonance of the quantum dots is observed, accompanied by an absorption enhancement factor greater than one million. NETS can find immediate applications in terahertz spectroscopic studies of nanocrystals and molecules at extremely low concentrations. Furthermore, it shows a practicable route toward the characterization of individual nano-objects at these frequencies.
Highly Transparent, Visible-Light Photodetector Based on Oxide Semiconductors and Quantum Dots.
Shin, Seung Won; Lee, Kwang-Ho; Park, Jin-Seong; Kang, Seong Jun
2015-09-09
Highly transparent phototransistors that can detect visible light have been fabricated by combining indium-gallium-zinc oxide (IGZO) and quantum dots (QDs). A wide-band-gap IGZO film was used as a transparent semiconducting channel, while small-band-gap QDs were adopted to absorb and convert visible light to an electrical signal. Typical IGZO thin-film transistors (TFTs) did not show a photocurrent with illumination of visible light. However, IGZO TFTs decorated with QDs showed enhanced photocurrent upon exposure to visible light. The device showed a responsivity of 1.35×10(4) A/W and an external quantum efficiency of 2.59×10(4) under illumination by a 635 nm laser. The origin of the increased photocurrent in the visible light was the small band gap of the QDs combined with the transparent IGZO films. Therefore, transparent phototransistors based on IGZO and QDs were fabricated and characterized in detail. The result is relevant for the development of highly transparent photodetectors that can detect visible light.
Energy Technology Data Exchange (ETDEWEB)
Wensorra, Jakob
2009-03-20
The goal of this work has been to investigate und understand the electronic transport properties of vertical GaAs/AlAs nanocolumn resonant tunneling diodes (RTDs) and field effect transistors (RTTs) as well as of vertical InAs nanocolumn phase interference diodes. Besides the fabrication and electrical characterization of the devices, numerical calculations, simulations and quantum transport models represent the second important part of the work. GaAs/AlAs and InAs nanocolumns with lateral dimensions down to 30 nm have been processed by top-down approach. Room temperature DC electrical measurements on the nano-RTDs show a distinct negative differential resistance in the I-V characteristics for devices down to 30 nm lateral dimension. The miniaturization of the RTDs leads to the degradation of the transport properties, especially of the peak to valley current ratio (PVR), due to the increased surface scattering. Apart from the main current peak, new substructures can be observed in the I-V characteristics. These are shoulder like features for columns with diameters between 80 nm and 100 nm but become clear peaks when the column diameters are in the 55-75 nm range. For sub-65 nm column lateral dimensions, a strong increase of the PVR and a sharp single peak is observed. A local maximum of the PVR of 3 is reached for columns with 50 nm diameter. The sub-40 nm devices show only space charge limited currents in the I-V characteristics. This behavior can be shifted to smaller or larger diameters by increasing or reduction of the channel doping. For the smallest nanocolumns the lateral quantum confinement, caused by the low dimensionality of the system, leads to the formation of a 3D quantum-point-contact (QPC) in front of the DBQW structure. The quantization in this QPC depends on the column diameter and for a 50 nm column it exceeds the room temperature thermal broadening of the Fermi distribution function of about 25 meV. The measurements of the nano-RTTs indicate a
Cheng, Mu-Tian; Liu, Shao-Ding; Wang, Qu-Quan
2008-04-01
We theoretically investigated the dynamics of exciton populations [ρyy(t ) and ρxx(t )] on two orthogonal polarization eigenstates (∣x⟩ and ∣y⟩) and the polarization ratio P(t )=[ρyy(t )-ρxx(t )]/[ρyy(t )+ρxx(t )] of an anisotropic InGaAs quantum dot modulated by the surface plasmon of an Au nanorod (NR). In the resonance of longitudinal surface plasmon of AuNR, the polarization ratio P(t ) increases from 0.22 to 0.99 during the excitation due to the efficient enhancement of Rabi frequency of the transition between the ∣y⟩ and vacuum states, and decreases from 0.02 to -0.92 after the excitation pulse due to the enhancement of decay rate of the ∣y⟩ state. This offers an approach to modulate the dynamic polarization ratio of radiative emissions.
The role of hydrostatic pressure and temperature on bound polaron in semiconductor quantum dot
International Nuclear Information System (INIS)
El Moussaouy, A.; Ouchani, N.
2014-01-01
We studied theoretically the effects of hydrostatic pressure and temperature on the binding energy of shallow hydrogenic impurity in a cylindrical quantum dot (QD) using a variational approach within the effective mass approximation. The hydrostatic stress was applied along the QD growth axis. The interactions between the charge carriers and confined longitudinal optical (LO) phonon modes are taken into account. The numerical computation for GaAs/Ga 1−x Al x As QD has shown that the binding energy with and without the polaronic correction depends on the location of the impurity and the pressure effect and it is more pronounced for impurities in the QD center. Both the binding energy and the polaronic contribution increase linearly with increasing stress. For each pressure value, these energies are also found to decrease as the temperature increases. The results obtained show that in experimental studies of optical and electronic properties of QDs, the effects of pressure, temperature and polaronic correction on donor impurity binding energy should be taken into consideration
Directory of Open Access Journals (Sweden)
Mahshid Mokhtarnejad
2017-01-01
Full Text Available This study examined MQWs made of InGaAs/GaAs, InAlAs/InP, and InGaAs/InP in terms of their band structure and reflectivity. We also demonstrated that the reflectivity of MQWs under normal incident was at maximum, while both using a strong pump and changing incident angle reduced it. Reflectivity of the structure for a weak probe pulse depends on polarization, intensity of the pump pulse, and delay between the probe pulse and the pump pulse. So this system can be used as an ultrafast all-optical switch which is inspected by the transfer matrix method. After studying the band structure of the one-dimensional photonic crystal, the optical stark effect (OSE was considered on it. Due to the OSE on virtual exciton levels, the switching time can be in the order of picoseconds. Moreover, it is demonstrated that, by introducing errors in width of barrier and well as well as by inserting defect, the reflectivity is reduced. Thus, by employing the mechanism of stark effect MQWs band-gaps can be easily controlled which is useful in designing MWQ based optical switches and filters. By comparing the results, we observe that the reflectivity of MWQ containing 200 periods of InAlAs/InP quantum wells shows the maximum reflectivity of 96%.
Magnetism at the Interface of Magnetic Oxide and Nonmagnetic Semiconductor Quantum Dots.
Saha, Avijit; Viswanatha, Ranjani
2017-03-28
Engineering interfaces specifically in quantum dot (QD) heterostructures provide several prospects for developing multifunctional building block materials. Precise control over internal structure by chemical synthesis offers a combination of different properties in QDs and allows us to study their fundamental properties, depending on their structure. Herein, we studied the interface of magnetic/nonmagnetic Fe 3 O 4 /CdS QD heterostructures. In this work, we demonstrate the decrease in the size of the magnetic core due to annealing at high temperature by the decrease in saturation magnetization and blocking temperature. Furthermore, surprisingly, in a prominently optically active and magnetically inactive material such as CdS, we observe the presence of substantial exchange bias in spite of the nonmagnetic nature of CdS QDs. The presence of exchange bias was proven by the increase in magnetic anisotropy as well as the presence of exchange bias field (H E ) during the field-cooled magnetic measurements. This exchange coupling was eventually traced to the in situ formation of a thin antiferromagnetic FeS layer at the interface. This is verified by the study of Fe local structure using X-ray absorption fine structure spectroscopy, demonstrating the importance of interface engineering in QDs.
Directory of Open Access Journals (Sweden)
Jan J. Dubowski
2013-06-01
Full Text Available The concept of a portable, inexpensive and semi-automated biosensing platform, or lab-on-a-chip, is a vision shared by many researchers and venture industries. Under this scope, we have investigated the application of optical emission from quantum well (QW microstructures for monitoring surface phenomena on gold layers remaining in proximity (<300 nm with QW microstructures. The uncollimated QW radiation excites surface plasmons (SP and through the surface plasmon resonance (SPR effect allows for detection of small perturbation in the density surface adsorbates. The SPR technology is already commonly used for biochemical characterization in pharmaceutical industries, but the reduction of the distance between the SP exciting source and the biosensing platform to a few hundreds of nanometers is an innovative approach enabling us to achieve an ultimate miniaturization of the device. We evaluate the signal quality of this nanophotonic QW-SPR device using hyperspectral-imaging technology, and we compare its performance with that of a standard prism-based commercial system. Two standard biochemical agents are employed for this characterization study: bovine serum albumin and inactivated influenza A virus. With an innovative conical method of SPR data collection, we demonstrate that individually collected SPR scan, each in less than 2.2 s, yield a resolution of the detection at 1.5 × 10−6 RIU.
Liu, Ansheng; Ning, Cun-Zheng
2000-01-01
Optical intersubband response of a multiple quantum well (MQW)-embedded microcavity driven by a coherent pump field is studied theoretically. The n-type doped MQW structure with three subbands in the conduction band is sandwiched between a semi-infinite medium and a distributed Bragg reflector (DBR). A strong pump field couples the two upper subbands and a weak field probes the two lower subbands. To describe the optical response of the MQW-embedded microcavity, we adopt a semi-classical nonlocal response theory. Taking into account the pump-probe interaction, we derive the probe-induced current density associated with intersubband transitions from the single-particle density-matrix formalism. By incorporating the current density into the Maxwell equation, we solve the probe local field exactly by means of Green's function technique and the transfer-matrix method. We obtain an exact expression for the probe absorption coefficient of the microcavity. For a GaAs/Al(sub x)Ga(sub 1-x)As MQW structure sandwiched between a GaAs/AlAs DBR and vacuum, we performed numerical calculations of the probe absorption spectra for different parameters such as pump intensity, pump detuning, and cavity length. We find that the probe spectrum is strongly dependent on these parameters. In particular, we find that the combination of the cavity effect and the Autler-Townes effect results in a triplet in the optical spectrum of the MQW system. The optical absorption peak value and its location can be feasibly controlled by varying the pump intensity and detuning.
Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya
2015-03-01
Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.
Klimov, Victor I
2010-01-01
""Soft"" Chemical Synthesis and Manipulation of Semiconductor Nanocrystals, J.A. Hollingsworth and V.I. Klimov Electronic Structure in Semiconductor Nanocrystals: Optical Experiment, D.J. NorrisFine Structure and Polarization Properties of Band-Edge Excitons in Semiconductor Nanocrystals, A.L. EfrosIntraband Spectroscopy and Dynamics of Colloidal Semiconductor Quantum Dots, P. Guyot-Sionnest, M. Shim, and C. WangMultiexciton Phenomena in Semiconductor Nanocrystals, V.I. KlimovOptical Dynamics in Single Semiconductor Quantum Do
Daniel, Erik Stephen
In this thesis we present the results of experimental and theoretical studies of two quantum effect devices--the Tunnel Switch Diode (TSD) and the Velocity Modulation Transistor (VMT). We show that TSD devices can be fabricated such that they behave (semi-quantitatively) as predicted by simple analytical models and more advanced drift-diffusion simulations. These devices possess characteristics, such as on-state currents which range over nearly five orders of magnitude, and on/off current ratios which are even larger, which may allow for a practical implementation of a very dense transistorless SRAM architecture and possibly other novel circuit designs. We demonstrate that many TSD properties can be explained by analogy to a thyristor. In particular, we show that the thin oxide layer in the TSD plays a critical role, and that this can be understood in terms of current injection through the oxide, analogous to transport through the "current limiting" layer in a thyristor. As this oxide layer can be subjected to extreme stress during device operation, we have studied the effect of this stress on device behavior. We demonstrate many significant stress-dependent effects, and identify structures and operation modes which minimize these effects. We propose an InAs/GaSb/AlSb VMT which may allow for larger conductance modulation and higher temperature operation than has been demonstrated in similar GaAs/AlAs structures. Fundamental differences in device operation in the two materials systems and unusual transport mechanisms in the InAs/GaSb/AlSb system are identified as a result of the band lineups in the two systems. Boltzmann transport simulations are developed and presented, allowing a qualitative description of the transport in the InAs/GaSb/AlSb structure. Band structure calculations are carried out, allowing for device design. While no working VMT devices were produced, this is believed to be due to processing and crystal growth problems. We present methods used to
International Nuclear Information System (INIS)
Simserides, Constantinos
2005-01-01
We study the magnetization, M, and the spin polarization, ζ, of n-doped non-magnetic-semiconductor (NMS)/narrow to wide dilute-magnetic-semiconductor (DMS)/n-doped NMS quantum wells, as a function of the temperature, T, and the in-plane magnetic field, B. Under such conditions the density of states (DOS) deviates from the occasionally stereotypic step-like form, both quantitatively and qualitatively. The DOS modification causes an impressive fluctuation of M in cases of vigorous competition between spatial and magnetic confinement. At low T, the enhanced electron spin-splitting, U oσ , acquires its bigger value. At higher T, U oσ decreases, augmenting the influence of the spin-up electrons. Increasing B, U oσ increases and accordingly electrons populate spin-down subbands while they abandon spin-up subbands. Furthermore, due to the DOS modification, all energetically higher subbands become gradually depopulated
International Nuclear Information System (INIS)
Daqiq, Reza; Ghobadi, Nader
2016-01-01
We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.
Energy Technology Data Exchange (ETDEWEB)
Daqiq, Reza; Ghobadi, Nader
2016-07-15
We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.
Energy Technology Data Exchange (ETDEWEB)
Nozik, Arthur J [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Beard, Matthew C [National Renewable Energy Laboratory (NREL), Golden, CO (United States)
2017-11-06
The challenge of photoconversion research is to produce photovoltaic electricity at costs much less than those based on fossil fuels. Novel photoactive semiconductors and molecules of various types and structures are discussed for this purpose.
Akimov, I. A.; Salewski, M.; Kalitukha, I. V.; Poltavtsev, S. V.; Debus, J.; Kudlacik, D.; Sapega, V. F.; Kopteva, N. E.; Kirstein, E.; Zhukov, E. A.; Yakovlev, D. R.; Karczewski, G.; Wiater, M.; Wojtowicz, T.; Korenev, V. L.; Kusrayev, Yu. G.; Bayer, M.
2017-11-01
The exchange interaction between magnetic ions and charge carriers in semiconductors is considered to be a prime tool for spin control. Here, we solve a long-standing problem by uniquely determining the magnitude of the long-range p -d exchange interaction in a ferromagnet-semiconductor (FM-SC) hybrid structure where a 10-nm-thick CdTe quantum well is separated from the FM Co layer by a CdMgTe barrier with a thickness on the order of 10 nm. The exchange interaction is manifested by the spin splitting of acceptor bound holes in the effective magnetic field induced by the FM. The exchange splitting is directly evaluated using spin-flip Raman scattering by analyzing the dependence of the Stokes shift ΔS on the external magnetic field B . We show that in a strong magnetic field, ΔS is a linear function of B with an offset of Δp d=50 -100 μ eV at zero field from the FM induced effective exchange field. On the other hand, the s -d exchange interaction between conduction band electrons and FM, as well as the p -d contribution for free valence band holes, are negligible. The results are well described by the model of indirect exchange interaction between acceptor bound holes in the CdTe quantum well and the FM layer mediated by elliptically polarized phonons in the hybrid structure.
Quantum Confined Semiconductors
2015-02-01
scattering mechanisms ( acoustic , piezoelectric, polar and non-polar optical) and the ionized impurity scattering. Since InAs and GaSb are binary... pyrometer referenced at GaSb oxide desorption temperature of 530 C. Figure 6a plots the 10 K carrier densities as a function of Tg. The SLs grown
Self-formed waterfall plunge pools in homogeneous rock
Scheingross, Joel S.; Lo, Daniel Y.; Lamb, Michael P.
2017-01-01
Waterfalls are ubiquitous, and their upstream propagation can set the pace of landscape evolution, yet no experimental studies have examined waterfall plunge pool erosion in homogeneous rock. We performed laboratory experiments, using synthetic foam as a bedrock simulant, to produce self-formed waterfall plunge pools via particle impact abrasion. Plunge pool vertical incision exceeded lateral erosion by approximately tenfold until pools deepened to the point that the supplied sediment could not be evacuated and deposition armored the pool bedrock floor. Lateral erosion of plunge pool sidewalls continued after sediment deposition, but primarily at the downstream pool wall, which might lead to undermining of the plunge pool lip, sediment evacuation, and continued vertical pool floor incision in natural streams. Undercutting of the upstream pool wall was absent, and our results suggest that vertical drilling of successive plunge pools is a more efficient waterfall retreat mechanism than the classic model of headwall undercutting and collapse in homogeneous rock.
Energy Technology Data Exchange (ETDEWEB)
Tikhov, S. V.; Gorshkov, O. N.; Koryazhkina, M. N., E-mail: mahavenok@mail.ru; Kasatkin, A. P.; Antonov, I. N.; Vihrova, O. V.; Morozov, A. I. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation)
2016-12-15
The properties of metal–insulator–semiconductor (MIS) structures based on n-GaAs in which silicon oxide and yttria-stabilized zirconia and hafnia are used as the insulator containing InAs quantum dots, which are embedded at the insulator/n-GaAs interface, are investigated. The structures manifest the resistive switching and synaptic behavior.
Spin physics in semiconductors
2017-01-01
This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.
Semiconductors bonds and bands
Ferry, David K
2013-01-01
As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.
Directory of Open Access Journals (Sweden)
V.V.Ignatyuk
2004-01-01
Full Text Available Non-Markovian kinetic equations in the second Born approximation are derived for a two-zone semiconductor excited by a short laser pulse. Both collision dynamics and running nonequilibrium correlations are taken into consideration. The energy balance and relaxation of the system to equilibrium are discussed. Results of numerical solution of the kinetic equations for carriers and phonons are presented.
Qin, Jun; Lu, Guo-Wei; Sakamoto, Takahide; Akahane, Kouichi; Yamamoto, Naokatsu; Wang, Danshi; Wang, Cheng; Wang, Hongxiang; Zhang, Min; Kawanishi, Tetsuya; Ji, Yuefeng
2014-12-01
In this paper, we experimentally demonstrate simultaneous multichannel wavelength multicasting (MWM) and exclusive-OR logic gate multicasting (XOR-LGM) for three 10Gbps non-return-to-zero differential phase-shift-keying (NRZ-DPSK) signals in quantum-dot semiconductor optical amplifier (QD-SOA) by exploiting the four-wave mixing (FWM) process. No additional pump is needed in the scheme. Through the interaction of the input three 10Gbps DPSK signal lights in QD-SOA, each channel is successfully multicasted to three wavelengths (1-to-3 for each), totally 3-to-9 MWM, and at the same time, three-output XOR-LGM is obtained at three different wavelengths. All the new generated channels are with a power penalty less than 1.2dB at a BER of 10(-9). Degenerate and non-degenerate FWM components are fully used in the experiment for data and logic multicasting.
International Nuclear Information System (INIS)
Kim, Jungho; Yu, Bong-Ahn
2015-01-01
We numerically investigate the effect of the wetting-layer (WL) density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers in both electrical and optical pumping schemes by solving 1088 coupled rate equations. The temporal variations of the ultrafast gain and phase recovery responses at the ground state (GS) are calculated as a function of the WL density of states. The ultrafast gain recovery responses do not significantly depend on the WL density of states in the electrical pumping scheme and the three optical pumping schemes such as the optical pumping to the WL, the optical pumping to the excited state ensemble, and the optical pumping to the GS ensemble. The ultrafast phase recovery responses are also not significantly affected by the WL density of states except the optical pumping to the WL, where the phase recovery component caused by the WL becomes slowed down as the WL density of states increases. (paper)
Mode locking of an external cavity asymmetric quantum-well GaAs/AlGaAs semiconductor laser
International Nuclear Information System (INIS)
Vasil'ev, Petr P; Kan, H; Ohta, H; Hiruma, T; Tanaka, K A
2006-01-01
A theoretical model of the optical gain in asymmetric GaAs/AlGaAs quantum-well lasers is developed. It is demonstrated that the emission spectrum of asymmetric GaAs/AlGaAs quantum-well lasers is much broader than that of standard quantum-well lasers. The experimental samples of such lasers and superluminescent diodes with the emission bandwidth exceeding 50 nm are fabricated. Wavelength tunable ultrashort pulses with duration of 1-2 ps at repetition rates of 0.4-1 GHz are obtained by active mode locking of an external cavity laser. (lasers)
Dzhioev, R. I.; Korenev, V. L.; Lazarev, M. V.; Sapega, V. F.; Gammon, D.; Bracker, A. S.
2007-01-01
We report electric field induced increase of spin orientation of negatively charged excitons (trions) localized in n -type GaAs/AlGaAs quantum well. Under resonant excitation of free neutral heavy-hole excitons, the polarization of trions increases dramatically with electrical injection of electrons. The polarization enhancement correlates strongly with trion/exciton luminescence intensity ratio. This effect results from a very efficient trapping of free neutral excitons by the quantum well interfacial fluctuations (“natural” quantum dots) containing resident electrons.
The use of bulk states to accelerate the band edge state calculation of a semiconductor quantum dot
International Nuclear Information System (INIS)
Voemel, Christof; Tomov, Stanimire Z.; Wang, Lin-Wang; Marques, Osni A.; Dongarra, Jack J.
2007-01-01
We present a new technique to accelerate the convergence of the folded spectrum method in empirical pseudopotential band edge state calculations for colloidal quantum dots. We use bulk band states of the materials constituent of the quantum dot to construct initial vectors and a preconditioner. We apply these to accelerate the convergence of the folded spectrum method for the interior states at the top of the valence and the bottom of the conduction band. For large CdSe quantum dots, the number of iteration steps until convergence decreases by about a factor of 4 compared to previous calculations
Semiconductor lasers stability, instability and chaos
Ohtsubo, Junji
2017-01-01
This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...
Optical coherent control in semiconductors
DEFF Research Database (Denmark)
Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher
2001-01-01
of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...
Energy Technology Data Exchange (ETDEWEB)
Islam, Sk Masiul, E-mail: masiulelt@gmail.com; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P. [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Chakraborty, S. [Applied Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Sector-I, Kolkata 700 064 (India); Mukherjee, Rabibrata [Department of Chemical Engineering, Indian Institute of Technology, Kharagpur 721302 (India)
2015-06-24
Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.
Energy Technology Data Exchange (ETDEWEB)
Huebner, Marc C.
2009-10-15
Recently, the public has become aware of keywords like ''Quantum computer'' or ''Quantum cryptography''. Regarding their potential application in solid state based quantum information processing and their overall benefit in fundamental research quantum dots have gained more and more public interest. In this context, quantum dots are often referred to as ''artificial atoms'', a term subsuming their physical properties quite nicely and emphasizing the huge potential for further investigations. The basic mechanism to be considered is the theoretical model of a two-level system. A quantum dot itself represents this kind of system quite nicely, provided that only the presence or absence of a single exciton in the ground state of that structure is regarded. This concept can also be expanded to the presence of two excitons (bi-exciton). Transitions between the relevant levels can be induced by optical stimulation. When integrating quantum dots in diode like structures measurements of this phenomena can be accomplished regarding photo currents. This means of detection is highly sensitive and allows for tuning of the energy levels with respect to the energy of an exciting laser utilizing the Stark effect (via an external electric field). The photo current then shows narrow resonances representing those transitions. By this, the system can be used as a highly sensitive nano-spectrometer. The examination of coherent interactions between quantum dots and an electromagnetic field uses laser pulses that are much shorter than the dephasing time of the system (2 ps). The basic study to be done on two level systems is the measurement of Rabi oscillations allowing for the selection of an arbitrary superposition of states. In this work, the existing setup was improved regarding the possibility to control the temperature of the sample. Up to now, only investigations at 4,2 K have been possible. Even at 70 K Rabi oscillations
Liu, Xianzhe; Xu, Hua; Ning, Honglong; Lu, Kuankuan; Zhang, Hongke; Zhang, Xiaochen; Yao, Rihui; Fang, Zhiqiang; Lu, Xubing; Peng, Junbiao
2018-03-07
Amorphous Silicon-Tin-Oxide thin film transistors (a-STO TFTs) with Mo source/drain electrodes were fabricated. The introduction of a ~8 nm MoO x interlayer between Mo electrodes and a-STO improved the electron injection in a-STO TFT. Mo adjacent to the a-STO semiconductor mainly gets oxygen atoms from the oxygen-rich surface of a-STO film to form MoO x interlayer. The self-formed MoO x interlayer acting as an efficient interface modification layer could conduce to the stepwise internal transport barrier formation while blocking Mo atoms diffuse into a-STO layer, which would contribute to the formation of ohmic contact between Mo and a-STO film. It can effectively improve device performance, reduce cost and save energy for the realization of large-area display with high resolution in future.
DEFF Research Database (Denmark)
Breuer, Stefan; Elsässer, Wolfgang; McInerney, J.G.
2010-01-01
We have investigated experimentally the pulse train (mode beating) stability of a monolithic mode-locked multi-section quantum-dot laser with an added passive auxiliary optical fiber cavity. Addition of the weakly coupled (Â¿ -24dB) cavity reduces the current-induced shift dÂ¿/dI of the principal...
DEFF Research Database (Denmark)
Settnes, Mikkel; Nielsen, Per Kær; Lund, Anders Mølbjerg
2013-01-01
perform microscopic calculations of the effect treating the wetting layer as a non-Markovian reservoir interacting with the coupled quantum dot-cavity system through Coulomb interactions. Experimentally, cavity feeding has been observed in the asymmetric detuning range of -10 to +45 meV. We show...
Energy Technology Data Exchange (ETDEWEB)
Li, Jiahua [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China); Key Laboratory of Fundamental Physical Quantities Measurement of Ministry of Education, Wuhan 430074 (China); Yu, Rong, E-mail: yurong321@126.com [School of Science, Hubei Province Key Laboratory of Intelligent Robot, Wuhan Institute of Technology, Wuhan 430073 (China); Ma, Jinyong; Wu, Ying, E-mail: yingwu2@163.com [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)
2014-10-28
The ability to engineer and convert photons between different modes in a solid-state approach has extensive technological implications not only for classical communication systems but also for future quantum networks. In this paper, we put forward a scheme for coherent mode conversion of optical photons by utilizing the intermediate coupling between a single quantum dot and a bimodal photonic crystal microcavity via a waveguide. Here, one mode of the photonic crystal microcavity is coherently driven by an external single-frequency continuous-wave laser field and the two cavity modes are not coupled to each other due to their orthogonal polarizations. The undriven cavity mode is thus not directly coupled to the input driving laser and the only way it can get light is via the quantum dot. The influences of the system parameters on the photon-conversion efficiency are analyzed in detail in the limit of weak probe field and it is found that high photon-conversion efficiency can be achieved under appropriate conditions. It is shown that the cavity dark mode, which is a superposition of the two optical modes and is decoupled from the quantum dot, can appear in such a hybrid optical system. We discuss the properties of the dark mode and indicate that the formation of the dark mode enables the efficient transfer of optical fields between the two cavity modes.
De Jesus, Joel
The ZnCdMgSe family of II-VI materials has unique and promising characteristics that may be useful in practical applications. For example they can be grown lattice matched to InP substrates with lattice matched bandgaps that span from 2.1 to 3.5 eV, they can be successfully doped n-type, have a large conduction band offset (CBO) with no intervalley scattering present when strained, they have lower average phonon energies, and the InP lattice constant lies in the middle of the ZnSe and CdSe binaries compounds giving room to experiment with tensile and compressive stress. However they have not been studied in detail for use in practical devices. Here we have identified two types of devices that are being currently developed that benefit from the ZnCdMgSe-based material properties. These are the intersubband (ISB) quantum cascade (QC) detectors and optically pumped semiconductor lasers that emit in the visible range. The paucity for semiconductor lasers operating in the green-orange portion of the visible spectrum can be easily overcome with the ZnCdMgSe materials system developed in our research. The non-strain limited, large CBO available allows to expand the operating wavelength of ISB devices providing shorter and longer wavelengths than the currently commercially available devices. This property can also be exploited to develop broadband room temperature operation ISB detectors. The work presented here focused first on using the ZnCdMgSe-based material properties and parameter to understand and predict the interband and intersubband transitions of its heterostructures. We did this by studying an active region of a QC device by contactless electroreflectance, photoluminescence, FTIR transmittance and correlating the measurements to the quantum well structure by transfer matrix modeling. Then we worked on optimizing the ZnCdMgSe material heterostructures quality by studying the effects of growth interruptions on their optical and optoelectronic properties of
Semiconductor nanostructures for infrared applications
Zurauskiene, N.; Asmontas, S.; Dargys, A.; Kundrotas, J.; Janssen, G.; Goovaerts, E.; Marcinkevicius, S.; Koenraad, P.M.; Wolter, J.H.; Leon, R.
2004-01-01
We present the results of time-resolved photoluminescence (TRPL) and optically detected microwave resonance (ODMR) spectroscopy investigations of semiconductor quantum dots and quantum wells. The ODMR spectra of InAs/GaAs QDs were detected via modulation of the total intensity of the QDs emission
Rowland, Clare E; Susumu, Kimihiro; Stewart, Michael H; Oh, Eunkeu; Mäkinen, Antti J; O'Shaughnessy, Thomas J; Kushto, Gary; Wolak, Mason A; Erickson, Jeffrey S; Efros, Alexander L; Huston, Alan L; Delehanty, James B
2015-10-14
The intrinsic properties of quantum dots (QDs) and the growing ability to interface them controllably with living cells has far-reaching potential applications in probing cellular processes such as membrane action potential. We demonstrate that an electric field typical of those found in neuronal membranes results in suppression of the QD photoluminescence (PL) and, for the first time, that QD PL is able to track the action potential profile of a firing neuron with millisecond time resolution. This effect is shown to be connected with electric-field-driven QD ionization and consequent QD PL quenching, in contradiction with conventional wisdom that suppression of the QD PL is attributable to the quantum confined Stark effect.
International Nuclear Information System (INIS)
Peng Juan; Li Shu-Shen
2012-01-01
We study the electronic spectrum of coupled quantum dots (QDs) arranged as a graphene hexagonal lattice in the presence of an external perpendicular magnetic field. In our tight-binding model, the effect of the magnetic field is included in both the Peierls phase of the Hamiltonian and the tight-binding basis Wannier function. The energy of the system is analyzed when the magnetic flux through the lattice unit cell is a rational fraction of the quantum flux. The calculated spectrum has recursive properties, similar to those of the classical Hofstadter butterfly. However, unlike the ideal Hofstadter butterfly structure, our result is asymmetric since the impacts of the specific material and the magnetic field on the wavefunctions are included, making the results more realistic. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
DEFF Research Database (Denmark)
Carpintero, G.; Thompson, M. G.; Yvind, Kresten
2011-01-01
fabricated with different material gain systems, one quantum well and the other quantum dot (QD), both with a monolithic all-active two-section mode-locked structure. Two important factors are identified as having a significant effect on the noise performance, the RF linewidth of the first harmonic......Mode-locked lasers are commonly used in carrier-wave signal generation systems because of their excellent phase noise performance. Owing to the importance of this key parameter, this study presents a like-for-like comparison of the noise performance of the passive mode-locked regime of two devices...... and the shape of the noise pedestals, both depending on the passive mode-locked bias conditions. Nevertheless, the dominant contribution of the RF linewidth to the phase noise, which is significantly narrower for the QD laser, makes this material more suitable for optical generation of low-noise millimetre...
International Nuclear Information System (INIS)
Samadpour, Mahmoud; Giménez, Sixto; Boix, Pablo P.; Shen, Qing; Calvo, Mauricio E.; Taghavinia, Nima; Azam Iraji zad; Toyoda, Taro; Míguez, Hernán
2012-01-01
Highlights: ► Electrode nanostructure and quantum dot growth method have a clear influence in the final quantum dot solar cell performance. ► Higher V oc values are systematically obtained for TiO 2 morphologies with decreasing surface area. ► Higher V oc values are systematically obtained for cells using CBD growth method in comparison with SILAR method. - Abstract: Here we analyze the effect of two relevant aspects related to cell preparation on quantum dot sensitized solar cells (QDSCs) performance: the architecture of the TiO 2 nanostructured electrode and the growth method of quantum dots (QD). Particular attention is given to the effect on the photovoltage, V oc , since this parameter conveys the main current limitation of QDSCs. We have analyzed electrodes directly sensitized with CdSe QDs grown by chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR). We have carried out a systematic study comprising structural, optical, photophysical and photoelectrochemical characterization in order to correlate the material properties of the photoanodes with the functional performance of the manufactured QDSCs. The results show that the correspondence between photovoltaic conversion efficiency and the surface area of TiO 2 depends on the QDs deposition method. Higher V oc values are systematically obtained for TiO 2 morphologies with decreasing surface area and for cells using CBD growth method. This is systematically correlated to a higher recombination resistance of CBD sensitized electrodes. Electron injection kinetics from QDs into TiO 2 also depends on both the TiO 2 structure and the QDs deposition method, being systematically faster for CBD. Only for electrodes prepared with small TiO 2 nanoparticles SILAR method presents better performance than CBD, indicating that the small pore size disturb the CBD growth method. These results have important implications for the optimization of QDSCs.
Energy Technology Data Exchange (ETDEWEB)
Dong, Cunku; Li, Xin; Fan, Xiujuan [Department of Chemistry, Harbin Institute of Technology, Harbin 150090 (China); Qi, Jingyao [School of Municipal and Environmental Engineering, Harbin Institute of Technology, Harbin 150090 (China)
2012-06-15
A novel sandwich-like singled-walled titania nanotube is designed as a photoanode in quantum dot-sensitized solar cells. It acts as a hollow coaxial nanocable, in which the injected electron is confined in the conducting layer for transport, guarded from electron recombination by the protective layers. An ultrafast interfacial electron transfer is also expected in this photoelectric system due to the unique nanoarchitecture. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
International Nuclear Information System (INIS)
Malic, Ermin
2008-01-01
This work focuses on the theoretical investigation of optical properties of low-dimensional nanostructures, specifically single-walled carbon nanotubes (CNTs) and self-assembled InAs/GaAs quantum dots (QDs). The density-matrix formalism is applied to explain recent experimental results and to give insight into the underlying physics. A microscopic calculation of the absorption coefficient and the Rayleigh scattering cross section is performed by a novel approach combining the density-matrix formalism with the tight-binding wave functions. The calculated spectra of metallic nanotubes show a double-peaked structure resulting from the trigonal warping effect. The intensity ratios of the four lowest-lying transitions in both absorption and Rayleigh spectra can be explained by the different behavior of the optical matrix elements along the high-symmetry lines K-Γ and K-M. The Rayleigh line shape is predicted to be asymmetric, with an enhanced cross section for lower photon energies arising from non-resonant contributions of the optical susceptibility. Furthermore, the Coulomb interaction is shown to be maximal when the momentum transfer is low. For intersubband processes with a perpendicular momentum transfer, the coupling strength is reduced to less than 5%. The chirality and diameter dependence of the excitonic binding energy and the transition frequency are presented in Kataura plots. Furthermore, the influence of the surrounding environment on the optical properties of CNTs is investigated. Extending the confinement to all three spatial dimensions, semiconductor Bloch equation are derived to describe the dynamics in QD semiconductor lasers and amplifiers. A detailed microscopic analysis of the nonlinear turn-on dynamics of electrically pumped InAs/GaAs QD lasers is performed, showing the generation of relaxation oscillations on a nanosecond time scale in both the photon and charge carrier density. The theory predicts a strong damping of relaxation oscillations
Energy Technology Data Exchange (ETDEWEB)
Malic, Ermin
2008-09-02
This work focuses on the theoretical investigation of optical properties of low-dimensional nanostructures, specifically single-walled carbon nanotubes (CNTs) and self-assembled InAs/GaAs quantum dots (QDs). The density-matrix formalism is applied to explain recent experimental results and to give insight into the underlying physics. A microscopic calculation of the absorption coefficient and the Rayleigh scattering cross section is performed by a novel approach combining the density-matrix formalism with the tight-binding wave functions. The calculated spectra of metallic nanotubes show a double-peaked structure resulting from the trigonal warping effect. The intensity ratios of the four lowest-lying transitions in both absorption and Rayleigh spectra can be explained by the different behavior of the optical matrix elements along the high-symmetry lines K-{gamma} and K-M. The Rayleigh line shape is predicted to be asymmetric, with an enhanced cross section for lower photon energies arising from non-resonant contributions of the optical susceptibility. Furthermore, the Coulomb interaction is shown to be maximal when the momentum transfer is low. For intersubband processes with a perpendicular momentum transfer, the coupling strength is reduced to less than 5%. The chirality and diameter dependence of the excitonic binding energy and the transition frequency are presented in Kataura plots. Furthermore, the influence of the surrounding environment on the optical properties of CNTs is investigated. Extending the confinement to all three spatial dimensions, semiconductor Bloch equation are derived to describe the dynamics in QD semiconductor lasers and amplifiers. A detailed microscopic analysis of the nonlinear turn-on dynamics of electrically pumped InAs/GaAs QD lasers is performed, showing the generation of relaxation oscillations on a nanosecond time scale in both the photon and charge carrier density. The theory predicts a strong damping of relaxation oscillations
Gong, Jianxiao; Steinsultz, Nat; Ouyang, Min
2016-06-08
The ability to control the interaction between nitrogen-vacancy centres in diamond and photonic and/or broadband plasmonic nanostructures is crucial for the development of solid-state quantum devices with optimum performance. However, existing methods typically employ top-down fabrication, which restrict scalable and feasible manipulation of nitrogen-vacancy centres. Here, we develop a general bottom-up approach to fabricate an emerging class of freestanding nanodiamond-based hybrid nanostructures with external functional units of either plasmonic nanoparticles or excitonic quantum dots. Precise control of the structural parameters (including size, composition, coverage and spacing of the external functional units) is achieved, representing a pre-requisite for exploring the underlying physics. Fine tuning of the emission characteristics through structural regulation is demonstrated by performing single-particle optical studies. This study opens a rich toolbox to tailor properties of quantum emitters, which can facilitate design guidelines for devices based on nitrogen-vacancy centres that use these freestanding hybrid nanostructures as building blocks.
Solar Cells Using Quantum Funnels
Kramer, Illan J.; Levina, Larissa; Debnath, Ratan; Zhitomirsky, David; Sargent, Edward H.
2011-01-01
Colloidal quantum dots offer broad tuning of semiconductor bandstructure via the quantum size effect. Devices involving a sequence of layers comprised of quantum dots selected to have different diameters, and therefore bandgaps, offer
Gain and Index Dynamics in Semiconductor Lasers
DEFF Research Database (Denmark)
Hvam, Jørn Märcher
Semiconductor optical amplifiers (SOAs) provide ultrafast, i.e. broadband components for optical communication systems. They enter not only as signal generators and amplifiers, but also as nonlinear elements for ultrafast signal processing such as wavelength conversion, switching, and regeneration...... changed character from bulk semiconductor to quantum wells and most recently to quantum dots. By quantum confinement of the carriers, the light-matter interactions can be significantly modified and the optical properties, including dynamics, can be engineered to match the required functionalities...
DEFF Research Database (Denmark)
Houmark-Nielsen, Jakob; Nielsen, Torben Roland; Mørk, Jesper
2009-01-01
an important impact on the slow light properties. In the case of the Lambda and V schemes, the minimum required coupling power to achieve slow light is significantly reduced by many-body interactions. V type schemes are found to be generally preferable due to a favorable redistribution of carriers in energy......We investigate the impact of many-body interactions on group-velocity slowdown achieved via electromagnetically induced transparency in quantum dots using three different coupling-probe schemes (ladder, V, and Lambda, respectively). We find that for all schemes many-body interactions have...
Blakemore, J S
1987-01-01
In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.
Ravi, Koustuban; Wang, Qian; Ho, Seng-Tiong
2015-08-01
We report a new computational model for simulations of electromagnetic interactions with semiconductor quantum well(s) (SQW) in complex electromagnetic geometries using the finite-difference time-domain method. The presented model is based on an approach of spanning a large number of electron transverse momentum states in each SQW sub-band (multi-band) with a small number of discrete multi-electron states (multi-level, multi-electron). This enables accurate and efficient two-dimensional (2-D) and three-dimensional (3-D) simulations of nanophotonic devices with SQW active media. The model includes the following features: (1) Optically induced interband transitions between various SQW conduction and heavy-hole or light-hole sub-bands are considered. (2) Novel intra sub-band and inter sub-band transition terms are derived to thermalize the electron and hole occupational distributions to the correct Fermi-Dirac distributions. (3) The terms in (2) result in an explicit update scheme which circumvents numerically cumbersome iterative procedures. This significantly augments computational efficiency. (4) Explicit update terms to account for carrier leakage to unconfined states are derived, which thermalize the bulk and SQW populations to a common quasi-equilibrium Fermi-Dirac distribution. (5) Auger recombination and intervalence band absorption are included. The model is validated by comparisons to analytic band-filling calculations, simulations of SQW optical gain spectra, and photonic crystal lasers.
Directory of Open Access Journals (Sweden)
Hideki Gotoh
2014-10-01
Full Text Available Optical nonlinear effects are examined using a two-color micro-photoluminescence (micro-PL method in a coherently coupled exciton-biexciton system in a single quantum dot (QD. PL and photoluminescence excitation spectroscopy (PLE are employed to measure the absorption spectra of the exciton and biexciton states. PLE for Stokes and anti-Stokes PL enables us to clarify the nonlinear optical absorption properties in the lowest exciton and biexciton states. The nonlinear absorption spectra for excitons exhibit asymmetric shapes with peak and dip structures, and provide a distinct contrast to the symmetric dip structures of conventional nonlinear spectra. Theoretical analyses with a density matrix method indicate that the nonlinear spectra are caused not by a simple coherent interaction between the exciton and biexciton states but by coupling effects among exciton, biexciton and continuum states. These results indicate that Fano quantum interference effects appear in exciton-biexciton systems at QDs and offer important insights into their physics.
Wang, Le; Zong, Shenfei; Wang, Zhuyuan; Lu, Ju; Chen, Chen; Zhang, Ruohu; Cui, Yiping
2018-07-13
Single molecule localization microscopy (SMLM) is a powerful tool for imaging biological targets at the nanoscale. In this report, we present SMLM imaging of telomeres and centromeres using fluorescence in situ hybridization (FISH). The FISH probes were fabricated by decorating CdSSe/ZnS quantum dots (QDs) with telomere or centromere complementary DNA strands. SMLM imaging experiments using commercially available peptide nucleic acid (PNA) probes labeled with organic fluorophores were also conducted to demonstrate the advantages of using QDs FISH probes. Compared with the PNA probes, the QDs probes have the following merits. First, the fluorescence blinking of QDs can be realized in aqueous solution or PBS buffer without thiol, which is a key buffer component for organic fluorophores' blinking. Second, fluorescence blinking of the QDs probe needs only one excitation light (i.e. 405 nm). While fluorescence blinking of the organic fluorophores usually requires two illumination lights, that is, the activation light (i.e. 405 nm) and the imaging light. Third, the high quantum yield, multiple switching times and a good optical stability make the QDs more suitable for long-term imaging. The localization precision achieved in telomeres and centromeres imaging experiments is about 30 nm, which is far beyond the diffraction limit. SMLM has enabled new insights into telomeres or centromeres on the molecular level, and it is even possible to determine the length of telomere and become a potential technique for telomere-related investigation.
Brennan, Kevin F.
1999-02-01
Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.
Böer, Karl W
2018-01-01
This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.
International Nuclear Information System (INIS)
Pandya, Ankur; Shinde, Satyam; Jha, Prafulla K.
2015-01-01
In this paper the hot electron transport properties like carrier energy and momentum scattering rates and electron energy loss rates are calculated via interactions of electrons with polar acoustical phonons for Mn doped BN quantum well in BN nanosheets via piezoelectric scattering and deformation potential mechanisms at low temperatures with high electric field. Electron energy loss rate increases with the electric field. It is observed that at low temperatures and for low electric field the phonon absorption is taking place whereas, for sufficient large electric field, phonon emission takes place. Under the piezoelectric (polar acoustical phonon) scattering mechanism, the carrier scattering rate decreases with the reduction of electric field at low temperatures wherein, the scattering rate variation with electric field is limited by a specific temperature beyond which there is no any impact of electric field on such scattering
Yang, Peng; Yang, Yingshu; Wang, Yinghui; Gao, Jiechao; Sui, Ning; Chi, Xiaochun; Zou, Lu; Zhang, Han-Zhuang
2016-02-01
The photoluminescence (PL) characteristics of CdSe quantum dots (QDs) infiltrated into inverse opal SiO2 photonic crystals (PCs) are systemically studied. The special porous structure of inverse opal PCs enhanced the thermal exchange rate between the CdSe QDs and their surrounding environment. Finally, inverse opal SiO2 PCs suppressed the nonlinear PL enhancement of CdSe QDs in PCs excited by a continuum laser and effectively modulated the PL characteristics of CdSe QDs in PCs at high temperatures in comparison with that of CdSe QDs out of PCs. The final results are of benefit in further understanding the role of inverse opal PCs on the PL characteristics of QDs. Copyright © 2015 John Wiley & Sons, Ltd.
Lo, Mu-Chieh; Guzmán, Robinson; Ali, Muhsin; Santos, Rui; Augustin, Luc; Carpintero, Guillermo
2017-10-01
We report on an optical frequency comb with 14nm (~1.8 THz) spectral bandwidth at -3 dB level that is generated using a passively mode-locked quantum-well (QW) laser in photonic integrated circuits (PICs) fabricated through an InP generic photonic integration technology platform. This 21.5-GHz colliding-pulse mode-locked laser cavity is defined by on-chip reflectors incorporating intracavity phase modulators followed by an extra-cavity SOA as booster amplifier. A 1.8-THz-wide optical comb spectrum is presented with ultrafast pulse that is 0.35-ps-wide. The radio frequency beat note has a 3-dB linewidth of 450 kHz and 35-dB SNR.
Al-Khalili, Jim
2003-01-01
In this lively look at quantum science, a physicist takes you on an entertaining and enlightening journey through the basics of subatomic physics. Along the way, he examines the paradox of quantum mechanics--beautifully mathematical in theory but confoundingly unpredictable in the real world. Marvel at the Dual Slit experiment as a tiny atom passes through two separate openings at the same time. Ponder the peculiar communication of quantum particles, which can remain in touch no matter how far apart. Join the genius jewel thief as he carries out a quantum measurement on a diamond without ever touching the object in question. Baffle yourself with the bizzareness of quantum tunneling, the equivalent of traveling partway up a hill, only to disappear then reappear traveling down the opposite side. With its clean, colorful layout and conversational tone, this text will hook you into the conundrum that is quantum mechanics.
Energy Technology Data Exchange (ETDEWEB)
Hundt, Andreas
2007-10-09
Semiconductor quantum dots (QD) are objects on the nanometer scale, where charge carriers are confined in all three dimensions. This leads to a reduced interaction with the semiconductor lattice and to a discrete density of states. The spin state of a particle defines the polarisation of the emitted light when relaxating to an energetically lower state. Spin exchange and optical transition selection rules (conservation law for spin) define the optical control of spin states. In the examined QD in II-VI seminconductor systems the large polar character of the bindings enables to observe particle interactions by spectroscopy of the photo-luminescence (PL), making QD attractive for basic research. This work subjects in its first part single negatively charged non-magnetic QD. The odd number of carriers allows to study the latter in an unpaired state. By using polarization-resolved micro-PL spectroscopy, the spin-states of single, isolated QD can be studied reproducibly. Of special interest are exchange interactions in this few-particle system named trion. By excitation spectroscopy energetically higher states can be identified and characterized. The exchange interactions appearing here lead to state mixing and fine structure patterns in the spectra. Couplings in excited hole states show the way to the optical orientation of the resident electron spin. The spin configuration of the trion triplet state can be used to optically control the resident electron spin. Semimagnetic QD are focused in the second part of this work. The interaction with a paramagnetic environment of manganese spins leads to new magneto-optical properties of the QD. They reveal on a single dot level by line broadening due to spin fluctuations and by the giant Zeeman effect of the dot ensemble. Of special interest in this context is the influence of the reduced system dimension and the relatively larger surface of the system on the exchange mechanisms. The strong temperature dependence of the spin
Fundamentals of semiconductor lasers
Numai, Takahiro
2015-01-01
This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes. The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions. Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.
Coherent dynamics in semiconductors
DEFF Research Database (Denmark)
Hvam, Jørn Märcher
1998-01-01
enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...
Photoelectronic properties of semiconductors
Bube, Richard H
1992-01-01
The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...
Hamaguchi, Chihiro
2017-01-01
This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...
Semiconductor physics an introduction
Seeger, Karlheinz
1999-01-01
Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.
Wang, Fudong; Buhro, William E
2017-12-26
Crystal-phase control is one of the most challenging problems in nanowire growth. We demonstrate that, in the solution-phase catalyzed growth of colloidal cadmium telluride (CdTe) quantum wires (QWs), the crystal phase can be controlled by manipulating the reaction chemistry of the Cd precursors and tri-n-octylphosphine telluride (TOPTe) to favor the production of either a CdTe solute or Te, which consequently determines the composition and (liquid or solid) state of the Bi x Cd y Te z catalyst nanoparticles. Growth of single-phase (e.g., wurtzite) QWs is achieved only from solid catalysts (y ≪ z) that enable the solution-solid-solid growth of the QWs, whereas the liquid catalysts (y ≈ z) fulfill the solution-liquid-solid growth of the polytypic QWs. Factors that affect the precursor-conversion chemistry are systematically accounted for, which are correlated with a kinetic study of the composition and state of the catalyst nanoparticles to understand the mechanism. This work reveals the role of the precursor-reaction chemistry in the crystal-phase control of catalytically grown colloidal QWs, opening the possibility of growing phase-pure QWs of other compositions.
Energy Technology Data Exchange (ETDEWEB)
Vexler, M. I., E-mail: vexler@mail.ioffe.ru; Illarionov, Yu. Yu.; Grekhov, I. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
2017-04-15
The prerequisites for electron storage in the quantum well of a metal–oxide–p{sup +}-Si resonant-tunneling structure and the effect of the stored charge on the voltage distribution are theoretically investigated. Systems with SiO{sub 2}, HfO{sub 2}, and TiO{sub 2} insulators are studied. It is demonstrated that the occurrence of a charge in the well in the case of resonant transport can be expected in structures on substrates with an acceptor concentration from (5–6) × 10{sup 18} to (2–3) × 10{sup 19} cm{sup –3} in the range of oxide thicknesses dependent on this concentration. In particular, the oxide layer thickness in the structures with SiO{sub 2}/p{sup +}-Si(10{sup 19} cm{sup –3}) should exceed ~3 nm. The electron density in the well can reach ~10{sup 12} cm{sup –2} and higher. However, the effect of this charge on the electrostatics of the structure becomes noticeable only at relatively high voltages far above the activation of resonant transport through the first subband.
Hargart, F.; Roy-Choudhury, K.; John, T.; Portalupi, S. L.; Schneider, C.; Höfling, S.; Kamp, M.; Hughes, S.; Michler, P.
2016-12-01
In this work we present an extensive experimental and theoretical investigation of different regimes of strong field light-matter interaction for cavity-driven quantum dot (QD) cavity systems. The electric field enhancement inside a high-Q micropillar cavity facilitates exceptionally strong interaction with few cavity photons, enabling the simultaneous investigation for a wide range of QD-laser detuning. In case of a resonant drive, the formation of dressed states and a Mollow triplet sideband splitting of up to 45 μeV is measured for a mean cavity photon number ≤slant 1. In the asymptotic limit of the linear AC Stark effect we systematically investigate the power and detuning dependence of more than 400 QDs. Some QD-cavity systems exhibit an unexpected anomalous Stark shift, which can be explained by an extended dressed 4-level QD model. We provide a detailed analysis of the QD-cavity systems properties enabling this novel effect. The experimental results are successfully reproduced using a polaron master equation approach for the QD-cavity system, which includes the driving laser field, exciton-cavity and exciton-phonon interactions.
Semiconductors and semimetals epitaxial microstructures
Willardson, Robert K; Beer, Albert C; Gossard, Arthur C
1994-01-01
Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors
Modeling of semiconductor optical amplifiers
DEFF Research Database (Denmark)
Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther
We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....
Quantum computing and spintronics
International Nuclear Information System (INIS)
Kantser, V.
2007-01-01
Tentative to build a computer, which can operate according to the quantum laws, has leaded to concept of quantum computing algorithms and hardware. In this review we highlight recent developments which point the way to quantum computing on the basis solid state nanostructures after some general considerations concerning quantum information science and introducing a set of basic requirements for any quantum computer proposal. One of the major direction of research on the way to quantum computing is to exploit the spin (in addition to the orbital) degree of freedom of the electron, giving birth to the field of spintronics. We address some semiconductor approach based on spin orbit coupling in semiconductor nanostructures. (authors)
Second harmonic spectroscopy of semiconductor nanostructures
DEFF Research Database (Denmark)
Østergaard, John Erland; Yu, Ping; Bozhevolnyi, Sergey I.
1999-01-01
Semiconductor nanostructures and their application to optoelectronic devices have attracted much attention recently. Lower-dimensional structures, and in particular quantum dots, are highly anisotropic resulting in broken symmetry as compared to their bulk counterparts. This is not only reflected...
Semiconductor Manufacturing equipment introduction
International Nuclear Information System (INIS)
Im, Jong Sun
2001-02-01
This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.
International Nuclear Information System (INIS)
Basdevant, J.L.; Dalibard, J.; Joffre, M.
2008-01-01
All physics is quantum from elementary particles to stars and to the big-bang via semi-conductors and chemistry. This theory is very subtle and we are not able to explain it without the help of mathematic tools. This book presents the principles of quantum mechanics and describes its mathematical formalism (wave function, Schroedinger equation, quantum operators, spin, Hamiltonians, collisions,..). We find numerous applications in the fields of new technologies (maser, quantum computer, cryptography,..) and in astrophysics. A series of about 90 exercises with their answers is included. This book is based on a physics course at a graduate level. (A.C.)
Developing New Nanoprobes from Semiconductor Nanocrystals
Energy Technology Data Exchange (ETDEWEB)
Fu, Aihua [Univ. of California, Berkeley, CA (United States)
2006-01-01
In recent years, semiconductor nanocrystal quantum dots havegarnered the spotlight as an important new class of biological labelingtool. Withoptical properties superior to conventional organicfluorophores from many aspects, such as high photostability andmultiplexing capability, quantum dots have been applied in a variety ofadvanced imaging applications. This dissertation research goes along withlarge amount of research efforts in this field, while focusing on thedesign and development of new nanoprobes from semiconductor nanocrystalsthat are aimed for useful imaging or sensing applications not possiblewith quantum dots alone. Specifically speaking, two strategies have beenapplied. In one, we have taken advantage of the increasing capability ofmanipulating the shape of semiconductor nanocrystals by developingsemiconductor quantum rods as fluorescent biological labels. In theother, we have assembled quantum dots and gold nanocrystals into discretenanostructures using DNA. The background information and synthesis,surface manipulation, property characterization and applications of thesenew nanoprobes in a few biological experiments are detailed in thedissertation.
Xia, Jianbai; Chang, Kai
2012-01-01
Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.
Metal-insulator-semiconductor photodetectors.
Lin, Chu-Hsuan; Liu, Chee Wee
2010-01-01
The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.
Metal-Insulator-Semiconductor Photodetectors
Directory of Open Access Journals (Sweden)
Chu-Hsuan Lin
2010-09-01
Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.
Self-assembling peptide semiconductors
Tao, Kai; Makam, Pandeeswar; Aizen, Ruth; Gazit, Ehud
2017-01-01
Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems. PMID:29146781
Compound semiconductor device modelling
Miles, Robert
1993-01-01
Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...
Ultrafast Degenerate Transient Lens Spectroscopy in Semiconductor Nanosctructures
Directory of Open Access Journals (Sweden)
Leontyev A.V.
2015-01-01
Full Text Available We report the non-resonant excitation and probing of the nonlinear refractive index change in bulk semiconductors and semiconductor quantum dots through degenerate transient lens spectroscopy. The signal oscillates at the center laser field frequency, and the envelope of the former in quantum dots is distinctly different from the one in bulk sample. We discuss the applicability of this technique for polarization state probing in semiconductor media with femtosecond temporal resolution.
Tartakovskii, Alexander
2012-07-01
Part I. Nanostructure Design and Structural Properties of Epitaxially Grown Quantum Dots and Nanowires: 1. Growth of III/V semiconductor quantum dots C. Schneider, S. Hofling and A. Forchel; 2. Single semiconductor quantum dots in nanowires: growth, optics, and devices M. E. Reimer, N. Akopian, M. Barkelid, G. Bulgarini, R. Heeres, M. Hocevar, B. J. Witek, E. Bakkers and V. Zwiller; 3. Atomic scale analysis of self-assembled quantum dots by cross-sectional scanning tunneling microscopy and atom probe tomography J. G. Keizer and P. M. Koenraad; Part II. Manipulation of Individual Quantum States in Quantum Dots Using Optical Techniques: 4. Studies of the hole spin in self-assembled quantum dots using optical techniques B. D. Gerardot and R. J. Warburton; 5. Resonance fluorescence from a single quantum dot A. N. Vamivakas, C. Matthiesen, Y. Zhao, C.-Y. Lu and M. Atature; 6. Coherent control of quantum dot excitons using ultra-fast optical techniques A. J. Ramsay and A. M. Fox; 7. Optical probing of holes in quantum dot molecules: structure, symmetry, and spin M. F. Doty and J. I. Climente; Part III. Optical Properties of Quantum Dots in Photonic Cavities and Plasmon-Coupled Dots: 8. Deterministic light-matter coupling using single quantum dots P. Senellart; 9. Quantum dots in photonic crystal cavities A. Faraon, D. Englund, I. Fushman, A. Majumdar and J. Vukovic; 10. Photon statistics in quantum dot micropillar emission M. Asmann and M. Bayer; 11. Nanoplasmonics with colloidal quantum dots V. Temnov and U. Woggon; Part IV. Quantum Dot Nano-Laboratory: Magnetic Ions and Nuclear Spins in a Dot: 12. Dynamics and optical control of an individual Mn spin in a quantum dot L. Besombes, C. Le Gall, H. Boukari and H. Mariette; 13. Optical spectroscopy of InAs/GaAs quantum dots doped with a single Mn atom O. Krebs and A. Lemaitre; 14. Nuclear spin effects in quantum dot optics B. Urbaszek, B. Eble, T. Amand and X. Marie; Part V. Electron Transport in Quantum Dots Fabricated by
DEFF Research Database (Denmark)
Leosson, Kristjan
1999-01-01
Semiconductor quantum dots ("solid state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution of...
DEFF Research Database (Denmark)
Leosson, Kristjan
Semiconductor quantum dots ("solid-state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution of...
Scalable quantum computer architecture with coupled donor-quantum dot qubits
Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey
2014-08-26
A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.
International Nuclear Information System (INIS)
Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.
2007-01-01
Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief
Injection of spin-polarized current into semiconductor
International Nuclear Information System (INIS)
Vedyayev, A.V.; Dieny, B.; Ryzhanova, N.V.; Zhukov, I.V.; Zhuravlev, M.Ye.; Lutz, H.O.
2003-01-01
A quantum-statistical theory of injection of spin-polarized current into a semiconductor in ferromagnet/tunnel barrier/semiconductor system is presented. The presence of Schottky barrier in the semiconductor is taken into account. The case of degenerated and non-degenerated semiconductors are considered. Both the diffusive and ballistic transport regime are investigated. The dependence of current polarization on barrier thickness and temperature is calculated
Svensson, Bengt G; Jagadish, Chennupati
2013-01-01
Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient
Blakemore, J S
1962-01-01
Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co
International Nuclear Information System (INIS)
Cortina, E.
2007-01-01
Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)
Fermionic entanglement via quantum walks in quantum dots
Melnikov, Alexey A.; Fedichkin, Leonid E.
2018-02-01
Quantum walks are fundamentally different from random walks due to the quantum superposition property of quantum objects. Quantum walk process was found to be very useful for quantum information and quantum computation applications. In this paper we demonstrate how to use quantum walks as a tool to generate high-dimensional two-particle fermionic entanglement. The generated entanglement can survive longer in the presence of depolorazing noise due to the periodicity of quantum walk dynamics. The possibility to create two distinguishable qudits in a system of tunnel-coupled semiconductor quantum dots is discussed.
Isotopically controlled semiconductors
Energy Technology Data Exchange (ETDEWEB)
Haller, Eugene E.
2006-06-19
The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.
Bondar, N. V.; Brodyn, M. S.
2010-03-01
In two-phase disordered media composed of borosilicate glass with ZnSe or CdS quantum dots, the formation of a phase percolation transition of carriers for near-threshold concentrations that are manifested in optical spectra has been observed. Microscopic fluctuations of the quantum-dot density near the percolation threshold were found that resembled the phenomenon of critical opalescence, where similar fluctuations of the density of a pure substance appear near to a phase transition. It is proposed that the dielectric mismatch between a matrix and ZnSe or CdS quantum dots plays a significant role in the carrier (exciton) delocalization, resulting in the appearance of a “dielectric Coulomb trap” beyond the QD border and the formation of surface states of excitons. The spatial overlapping of excitonic states at the critical density of quantum dots results in a tunneling of carriers and the formation of a phase percolation transition in such media.
Heterostructures and quantum devices
Einspruch, Norman G
1994-01-01
Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical en
High mobility emissive organic semiconductor
Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.
2015-01-01
The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323
Decoherence in semiconductor cavity QED systems due to phonon couplings
DEFF Research Database (Denmark)
Nielsen, Per Kær; Mørk, Jesper
2014-01-01
We investigate the effect of electron-phonon interactions on the coherence properties of single photons emitted from a semiconductor cavity QED (quantum electrodynamics) system, i.e., a quantum dot embedded in an optical cavity. The degree of indistinguishability, governing the quantum mechanical...
International Nuclear Information System (INIS)
Hartmann, Frank
2011-01-01
Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.
Klingshirn, Claus F
2012-01-01
This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...
International Nuclear Information System (INIS)
Young, J.M.; Scovell, P.D.
1982-01-01
A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)
Kuhlmann, Andreas V; Houel, Julien; Brunner, Daniel; Ludwig, Arne; Reuter, Dirk; Wieck, Andreas D; Warburton, Richard J
2013-07-01
Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light. We have met this challenge by creating a polarization-based dark-field microscope to measure the resonance fluorescence from a single quantum dot at low temperature. We achieve a suppression of the scattered laser exceeding a factor of 10(7) and background-free detection of resonance fluorescence. The same optical setup operates over the entire quantum dot emission range (920-980 nm) and also in high magnetic fields. The major development is the outstanding long-term stability: once the dark-field point has been established, the microscope operates for days without alignment. The mechanical and optical designs of the microscope are presented, as well as exemplary resonance fluorescence spectroscopy results on individual quantum dots to underline the microscope's excellent performance.
International Nuclear Information System (INIS)
Kuhlmann, Andreas V.; Houel, Julien; Warburton, Richard J.; Brunner, Daniel; Ludwig, Arne; Reuter, Dirk; Wieck, Andreas D.
2013-01-01
Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light. We have met this challenge by creating a polarization-based dark-field microscope to measure the resonance fluorescence from a single quantum dot at low temperature. We achieve a suppression of the scattered laser exceeding a factor of 10 7 and background-free detection of resonance fluorescence. The same optical setup operates over the entire quantum dot emission range (920–980 nm) and also in high magnetic fields. The major development is the outstanding long-term stability: once the dark-field point has been established, the microscope operates for days without alignment. The mechanical and optical designs of the microscope are presented, as well as exemplary resonance fluorescence spectroscopy results on individual quantum dots to underline the microscope's excellent performance
Spin-based quantum computation in multielectron quantum dots
Hu, Xuedong; Sarma, S. Das
2001-01-01
In a quantum computer the hardware and software are intrinsically connected because the quantum Hamiltonian (or more precisely its time development) is the code that runs the computer. We demonstrate this subtle and crucial relationship by considering the example of electron-spin-based solid state quantum computer in semiconductor quantum dots. We show that multielectron quantum dots with one valence electron in the outermost shell do not behave simply as an effective single spin system unles...
Directory of Open Access Journals (Sweden)
Ryan Kisslinger
2017-01-01
Full Text Available Bulk heterojunction solar cells based on blends of quantum dots and conjugated polymers are a promising configuration for obtaining high-efficiency, cheaply fabricated solution-processed photovoltaic devices. Such devices are of significant interest as they have the potential to leverage the advantages of both types of materials, such as the high mobility, band gap tunability and possibility of multiple exciton generation in quantum dots together with the high mechanical flexibility and large molar extinction coefficient of conjugated polymers. Despite these advantages, the power conversion efficiency (PCE of these hybrid devices has remained relatively low at around 6%, well behind that of all-organic or all-inorganic solar cells. This is attributed to major challenges that still need to be overcome before conjugated polymer–quantum dot blends can be considered viable for commercial application, such as controlling the film morphology and interfacial structure to ensure efficient charge transfer and charge transport. In this work, we present our findings with respect to the recent development of bulk heterojunctions made from conjugated polymer–quantum dot blends, list the ongoing strategies being attempted to improve performance, and highlight the key areas of research that need to be pursued to further develop this technology.
International Nuclear Information System (INIS)
Young, J.M.; Scovell, P.D.
1981-01-01
A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)
Energy Technology Data Exchange (ETDEWEB)
Bihler, Christoph
2009-04-15
In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)
Coherent control of quantum dots
DEFF Research Database (Denmark)
Johansen, Jeppe; Lodahl, Peter; Hvam, Jørn Märcher
In recent years much effort has been devoted to the use of semiconductor quantum dotsystems as building blocks for solid-state-based quantum logic devices. One importantparameter for such devices is the coherence time, which determines the number ofpossible quantum operations. From earlier...
Modelling colliding-pulse mode-locked semiconductor lasers
DEFF Research Database (Denmark)
Bischoff, Svend
or to determine the optimum operation conditions. The purpose of this thesis is to elucidate some of the physics of interest in the field of semiconductor laser modelling, semiconductor optics and fiber optics. To be more specific we will investigate: The Colliding-Pulse Mode-Locked (CPM) Quantum Well (QW) laser...... diode; the excitonic semiconductor response for varying material thickness in the case of linear optics; and modulational instability of electromagnetic waves in media with spatially varying non-linearity....
Semiconductor Laser Measurements Laboratory
Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...
Wave mechanics applied to semiconductor heterostructures
International Nuclear Information System (INIS)
Bastard, G.
1990-01-01
This book examines the basic electronic and optical properties of two dimensional semiconductor heterostructures based on III-V and II-VI compounds. The book explores various consequences of one-dimensional size-quantization on the most basic physical properties of heterolayers. Beginning with basic quantum mechanical properties of idealized quantum wells and superlattices, the book discusses the occurrence of bound states when the heterostructure is imperfect or when it is shone with near bandgap light
Hu, Chia-Ren
2004-03-01
We present classical macroscopic, microscopic, and quantum mechanical arguments to show that in a metallic or electron/hole-doped semiconducting sheet thinner than the screening length, a displacement current applied normal to it can induce a spinomotive force along it. The magnitude is weak but clearly detectable. The classical arguments are purely electromagnetic. The quantum argument, based on the Dirac equation, shows that the predicted effect originates from the spin-orbit interaction, but not of the usual kind. That is, it relies on an external electric field, whereas the usual S-O interaction involves the electric field generated by the ions. Because the Dirac equation incorporatesThomas precession, which is due to relativistic kinematics, the quantum prediction is a factor of two smaller than the classical prediction. Replacing the displacement current by a charge current, and one obtains a new source for the spin-Hall effect. Classical macroscopic argument also predicts its existence, but the other two views are controversial.
Korenev, Vladimir V.; Savelyev, Artem V.; Zhukov, Alexey E.; Omelchenko, Alexander V.; Maximov, Mikhail V.
2014-05-01
We introduce an analytical approach to the multi-state lasing phenomenon in p-doped and undoped InAs/InGaAs quantum dot lasers which were studied both theoretically and experimentally. It is shown that the asymmetry in charge carrier distribution in quantum dots as well as hole-to-electron capture rate ratio jointly determine laser's behavior in such a regime. If the ratio is lower than a certain critical value, the complete quenching of ground-state lasing takes place at sufficiently high injection currents; at higher values of the ratio, our model predicts saturation of the ground-state power. It was experimentally shown that the modulation p-doping of laser's active region results in increase of output power emitted via the ground-state optical transitions of quantum dots and in enhancement of the injection currents range in which multi-state lasing takes place. The maximum temperature at which multi-state lasing exists was increased by about 50°C in the p-doped samples. These effects are qualitatively explained in the terms of the proposed model.
Laboratory Modeling of Self-Formed Leveed Channels From Sediment-Laden Flows Entering Still Water
Rowland, J. C.; Dietrich, W. E.
2004-12-01
Self-formed leveed channels constructed by deposition of suspended sediment from sediment-laden flows entering still water are common features in nature. Such channels drive delta progradation, develop at tidal inlets and occur where mainstem river flows empty into oxbows and blocked valley lakes. Presently there is no theory for the formation of such channels. This lack of theory is partly due to a lack of field or laboratory studies that provide insight about the mechanism controlling these self-formed, propagating channels. The creation of such features in the laboratory, have proved illusive to date. Our ongoing experiments aimed at modeling the formation of floodplain tie channels provide insight into the necessary conditions for levee formation and channel growth. Under conditions of steady water discharge, constant sediment feed rate, unimodal sediment distribution and invariant basin stage we are able to create subaqueous lateral bars (submerged levees) along the margins of a sediment laden jet. Our results highlight the sensitivity of channel formation to issues of scaling and experimental design. In the laboratory, levee formation has only been possible with the use of plastic particles (specific gravity ~1.5); complete bed alluviation and dune formation results from the use of particles with specific gravities of ~ 2.65 across a range grain diameters and shapes. We hypothesize this effect is related to high entrainment thresholds relative to suspension thresholds of small (< 100 mm) natural particles under conditions of reduced turbulence in laboratory scaled flows. Additionally, both the width to depth ratio and the form of the outlet channel introducing the sediment laden flow into the experimental basin exert a strong control on sedimentation pattern and levee growth. Continuing experiments are focused on generating emergent channel levees and a basin ward propagation of the channel by adjusting the form of the feed channel, varying basin stage, and
Quantum dots of Cd0.5Mn0.5Te semimagnetic semiconductor formed by the cold isostatic pressure method
International Nuclear Information System (INIS)
Contreras, O.; Power, Ch.; Quintero, M.; Morocoima, M.; Tovar, R.; Quintero, E.; Gonzalez, J.; Munoz-San Jose, V.; Broto, J.M.; Snoeck, E.
2005-01-01
Cd 0.5 Mn 0.5 Te is a semimagnetic semiconductor, which crystallizes in the zinc-blende structure (ZB) and exhibits a magnetic spin glass like transition at 21 K. Under pressure it shows a first-order phase transition around 2.6 GPa to the NaCl like structure. In this work, the pressure cycled method using a Paris-Edinburgh cell up to 8 GPa has been applied to Cd 0.5 Mn 0.5 Te samples in order to obtain recovered nanocrystals. The nanoparticles have been characterized by EDX and electron microscopy. The X-ray and electron diffraction results confirmed the existence of nanocrystals in the ZB phase with an average size of 7 nm. Magnetization measurements made in the range of 2-300 K at low field show that the temperature of the magnetic transition decreases when the crystallites' size is reduced
Functionalized Self-Assembled InAs/GaAs Quantum-Dot Structures Hybridized with Organic Molecules
DEFF Research Database (Denmark)
Chen, Miaoxiang Max; Kobashi, K.; Chen, B.
2010-01-01
Low-dimensional III-V semiconductors have many advantages over other semiconductors; however, they are not particularly stable under physiological conditions. Hybridizing biocompatible organic molecules with advanced optical and electronic semiconductor devices based on quantum dots (QDs...
Ballistic superconductivity in semiconductor nanowires
Zhang, Hao; Gül, Önder; Conesa-Boj, Sonia; Nowak, Michał P.; Wimmer, Michael; Zuo, Kun; Mourik, Vincent; de Vries, Folkert K.; van Veen, Jasper; de Moor, Michiel W. A.; Bommer, Jouri D. S.; van Woerkom, David J.; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P.A.M.; Quintero-Pérez, Marina; Cassidy, Maja C.; Koelling, Sebastian; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P.
2017-01-01
Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices. PMID:28681843
4. Ukrainian Scientific Conference on Semiconductor Physics (USCPS - 4). Part 2. Abstracts
International Nuclear Information System (INIS)
Machulin, V.F.
2009-01-01
The materials reflect the content of the conference papers, in which the novel results, state and perspectives of research in the field of semiconductor physics, electronic or phonon phenomena on the surface and in bulk semiconductors, nano- and quantum dimensional structures, physics of modern solid state devices, semiconductor materials and technologies are presented.
Quantum dots for quantum information technologies
2017-01-01
This book highlights the most recent developments in quantum dot spin physics and the generation of deterministic superior non-classical light states with quantum dots. In particular, it addresses single quantum dot spin manipulation, spin-photon entanglement and the generation of single-photon and entangled photon pair states with nearly ideal properties. The role of semiconductor microcavities, nanophotonic interfaces as well as quantum photonic integrated circuits is emphasized. The latest theoretical and experimental studies of phonon-dressed light matter interaction, single-dot lasing and resonance fluorescence in QD cavity systems are also provided. The book is written by the leading experts in the field.
Ultranarrow polaritons in a semiconductor microcavity
DEFF Research Database (Denmark)
Jensen, Jacob Riis; Borri, Paola; Langbein, Wolfgang
2000-01-01
We have achieved a record high ratio (19) of the Rabi splitting (3.6 meV) to the polariton linewidth (190 mu eV), in a semiconductor lambda microcavity with a single 25 nm GaAs quantum well at the antinode. The narrow polariton lines are obtained with a special cavity design which reduces...
Selective photochemical dry etching of compound semiconductors
International Nuclear Information System (INIS)
Ashby, C.I.H.
1988-01-01
When laser-driven etching of a semiconductor requires direct participation of photogenerated carriers, the etching quantum yield will be sensitive to the electronic properties of a specific semiconductor material. The band-gap energy of the semiconductor determines the minimum photon energy needed for carrier-driven etching since sub-gap photons do not generate free carriers. However, only those free carriers that reach the reacting surface contribute to etching and the ultimate carrier flux to the surface is controlled by more subtle electronic properties than the lowest-energy band gap. For example, the initial depth of carrier generation and the probability of carrier recombination between the point of generation and the surface profoundly influence the etching quantum yield. Appropriate manipulation of process parameters can provide additional reaction control based on such secondary electronic properties. Applications to selective dry etching of GaAs and related materials are discussed
Long wave polar modes in semiconductor heterostructures
Trallero-Giner, C; García-Moliner, F; Garc A-Moliner, F; Perez-Alvarez, R; Garcia-Moliner, F
1998-01-01
Long Wave Polar Modes in Semiconductor Heterostructures is concerned with the study of polar optical modes in semiconductor heterostructures from a phenomenological approach and aims to simplify the model of lattice dynamics calculations. The book provides useful tools for performing calculations relevant to anyone who might be interested in practical applications. The main focus of Long Wave Polar Modes in Semiconductor Heterostructures is planar heterostructures (quantum wells or barriers, superlattices, double barrier structures etc) but there is also discussion on the growing field of quantum wires and dots. Also to allow anyone reading the book to apply the techniques discussed for planar heterostructures, the scope has been widened to include cylindrical and spherical geometries. The book is intended as an introductory text which guides the reader through basic questions and expands to cover state-of-the-art professional topics. The book is relevant to experimentalists wanting an instructive presentatio...
International Nuclear Information System (INIS)
Basdevant, J.L.; Dalibart, J.
1997-01-01
This pedagogical book gives an initiation to the principles and practice of quantum mechanics. A large part is devoted to experimental facts and to their analysis: concrete facts, phenomena and applications related to fundamental physics, elementary particles, astrophysics, high-technology, semi-conductors, micro-electronics and lasers. The book is divided in 22 chapters dealing with: quantum phenomena, wave function and Schroedinger equation, physical units and measurements, energy quantification of some simple systems, Hilbert space, Dirac formalism and quantum mechanics postulates, two-state systems and ammonia Maser principle, bands theory and crystals conductibility, commutation of observables, Stern and Gerlach experiment, approximation methods, kinetic momentum in quantum mechanics, first description of atoms, 1/2 spin formalism and magnetic resonance, Lagrangian, Hamiltonian and Lorentz force in quantum mechanics, addition of kinetic momenta and fine and hyper-fine structure of atomic lines, identical particle systems and Pauli principle, qualitative physics and scale of size of some microscopic and macroscopic phenomena, systems evolution, collisions and cross sections, invariance and conservation laws, quantum mechanics and astrophysics, and historical aspects of quantum mechanics. (J.S.)
Semiconductor laser shearing interferometer
International Nuclear Information System (INIS)
Ming Hai; Li Ming; Chen Nong; Xie Jiaping
1988-03-01
The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs
Controlling the emission wavelength in group III-V semiconductor laser diodes
Ooi, Boon S.; Majid, Mohammed Abdul; Afandy, Rami; Aljabr, Ahmad
2016-01-01
Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III
International Nuclear Information System (INIS)
Koh, D.; Kwon, H. M.; Kim, T.-W.; Veksler, D.; Gilmer, D.; Kirsch, P. D.; Kim, D.-H.; Hudnall, Todd W.; Bielawski, Christopher W.; Maszara, W.; Banerjee, S. K.
2014-01-01
In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In 0.53 Ga 0.47 As MOS capacitors with BeO and Al 2 O 3 and compared their electrical characteristics. As interface passivation layer, BeO/HfO 2 bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In 0.7 Ga 0.3 As QW MOSFETs with a BeO/HfO 2 dielectric, showing a sub-threshold slope of 100 mV/dec, and a transconductance (g m,max ) of 1.1 mS/μm, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for III–V MOSFETs at the 7 nm technology node and/or beyond
Strong Exciton-photon Coupling in Semiconductor Microcavities
DEFF Research Database (Denmark)
Jensen, Jacob Riis; Borri, Paola; Hvam, Jørn Märcher
1999-01-01
The basic building block of vertical cavity surface emitting lasers (VCSELs) and high efficiency diodes, is a quantum well embedded in a semiconductor microcavity. The high finesse that may be achieved in such a cavity is utilised to get a low threshold current in the VCSELs and a high directiona......The basic building block of vertical cavity surface emitting lasers (VCSELs) and high efficiency diodes, is a quantum well embedded in a semiconductor microcavity. The high finesse that may be achieved in such a cavity is utilised to get a low threshold current in the VCSELs and a high......-optical switches based on semiconductor microcavities....
Semiconductor micro cavities: half light, half matter
International Nuclear Information System (INIS)
Baumberg, Jeremy J.
2003-01-01
Quantum wells sandwiched tightly between two mirrors can be used to make a new type of laser that can amplify light more than any other known material. What do you get if you cross light with matter? It is a question that fascinates today's researchers in quantum optoelectronics, who want to see how far the physical states of the world can be intertwined. Although we have a good understanding of the quantum ingredients of optics and solids - photons and atoms - it turns out that assembling these building blocks in deliberately unfamiliar ways can lead to what is new and often quite unexpected behaviour. Consider 'quantum wells', which form the basis of modern semiconductor lasers. First developed in the 1980s, they lie at the heart of optical-communication and optical-storage technologies such as DVD players and they now have a global market of over 10bn British Pounds. Quantum wells consist of a thin sheet of crystalline semiconductor sandwiched between two sheets of another semiconductor. The outer layers squash the wavefunctions of electrons within the central sheet, increasing the electrons' energy and their interaction with light. Engineers can control the colour of the light emitted by the laser simply by adjusting the energy levels within the central sheet, which acts as a potential well. But this bug-sized playground for electrons has not just had technological ramifications. It has also spawned an enormous variety of new physics, including the quantum Hall effect, which can be used as a fundamental standard for measuring the ratio between the charge on the electron and the Planck constant. Over the last ten years researchers have also become increasingly keen to incorporate quantum wells into what are known as 'semiconductor micro cavities'. Physicists have found that these painstakingly layered materials can be used to create new quantum states that resemble superfluids and can be used in interferometric quantum devices. In the March issue of Physics
Semiconductor electrolyte photovoltaic energy converter
Anderson, W. W.; Anderson, L. B.
1975-01-01
Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.
Dissociation of Vertical Semiconductor Diatomic Artificial Molecules
International Nuclear Information System (INIS)
Pi, M.; Emperador, A.; Barranco, M.; Garcias, F.; Muraki, K.; Tarucha, S.; Austing, D. G.
2001-01-01
We investigate the dissociation of few-electron circular vertical semiconductor double quantum dot artificial molecules at 0T as a function of interdot distance. A slight mismatch introduced in the fabrication of the artificial molecules from nominally identical constituent quantum wells induces localization by offsetting the energy levels in the quantum dots by up to 2meV, and this plays a crucial role in the appearance of the addition energy spectra as a function of coupling strength particularly in the weak coupling limit
Periodic nanostructures self-formed on silicon and silicon carbide by femtosecond laser irradiation
Czech Academy of Sciences Publication Activity Database
Gemini, Laura; Hashida, M.; Shimizu, M.; Miyasaka, Y.; Inoue, S.; Tokita, S.; Limpouch, J.; Mocek, Tomáš; Sakabe, S.
2014-01-01
Roč. 117, č. 1 (2014), s. 49-54 ISSN 0947-8396 R&D Projects: GA MŠk ED2.1.00/01.0027; GA MŠk EE2.3.20.0143; GA MŠk(CZ) LG13029 Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 6(XE) CZ.1.07/2.3.00/20.0143 Institutional support: RVO:68378271 Keywords : coulomb explosion * ablation * surfaces * metals * pulses * semiconductors * fabrication * thresholds * picosecond Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.704, year: 2014
Semiconductors put spin in spintronics
International Nuclear Information System (INIS)
Weiss, Dieter
2000-01-01
Electrons and holes, which carry the current in semiconductor devices, are quantum-mechanical objects characterized by a set of quantum numbers - the band index, the wave-vector (which is closely related to the electron or hole velocity) and spin. The spin, however, is one of the strangest properties of particles. In simple terms, we can think of the spin as an internal rotation of the electron, but it has no classical counterpart. The spin is connected to a quantized magnetic moment and hence acts as a microscopic magnet. Thus the electron spin can adopt one of two directions (''up'' or ''down'') in a magnetic field. The spin plays no role in conventional electronics and the current in any semiconductor device is made up of a mixture of electrons with randomly oriented spins. However, a new range of electronic devices that transport the spin of the electrons, in addition to their charge, is being developed. But the biggest obstacle to making practical ''spin electronic'' or ''spintronic'' devices so far has been finding a way of injecting spin-polarized electrons or holes into the semiconductor and then detecting them. Recently a team of physicists from the University of Wuerzburg in Germany, and also a collaboration of researchers from Tohoku University in Japan and the University of California at Santa Barbara, have found a way round these problems using either semi-magnetic or ferromagnetic semiconductors as ''spin aligners'' (R Fiederling et al. 1999 Nature 402 787; Y Ohno et al. 1999 Nature 402 790). In this article the author presents the latest breakthrough in spintronics research. (UK)
Ahn, Doyeol
2011-01-01
A clear introduction to quantum mechanics concepts Quantum mechanics has become an essential tool for modern engineering, particularly due to the recent developments in quantum computing as well as the rapid progress in optoelectronic devices. Engineering Quantum Mechanics explains the fundamentals of this exciting field, providing broad coverage of both traditional areas such as semiconductor and laser physics as well as relatively new yet fast-growing areas such as quantum computation and quantum information technology. The book begins with basic quantum mechanics, reviewing measurements and probability, Dirac formulation, the uncertainty principle, harmonic oscillator, angular momentum eigenstates, and perturbation theory. Then, quantum statistical mechanics is explored, from second quantization and density operators to coherent and squeezed states, coherent interactions between atoms and fields, and the Jaynes-Cummings model. From there, the book moves into elementary and modern applications, discussing s...
Kéfélian, Fabien; O'Donoghue, Shane; Todaro, Maria Teresa; McInerney, John; Huyet, Guillaume
2009-04-13
We report experimental investigations on a two-section 16-GHz repetition rate InAs/GaAs quantum dot passively mode-locked laser. Near the threshold current, pseudo-periodic Q-switching with complex dynamics is exhibited. Mode-locking operation regimes characterized by different repetition rates and timing jitter levels are encountered up to twice the threshold current. Evolution of the RF spectrum and optical spectrum with current is compared. The different mode-locked regimes are shown to be associated with different spectral and temporal shapes, ranging from 1.3 to 6 ps. This point is discussed by introducing the existence of two different supermodes. Repetition rate evolution and timing jitter increase is attributed to the coupling between the dominant and the secondary supermodes.
Below-bandgap photoreflection spectroscopy of semiconductor laser structures
International Nuclear Information System (INIS)
Sotnikov, Aleksandr E; Chernikov, Maksim A; Ryabushkin, Oleg A; Trubenko, P; Moshegov, N; Ovchinnikov, A
2004-01-01
A new method of modulated light reflection - below-bandgap photoreflection, is considered. Unlike the conventional photoreflection method, the proposed method uses optical pumping by photons of energy smaller than the bandgap of any layer of a semiconductor structure under study. Such pumping allows one to obtain the modulated reflection spectrum for all layers of the structure without excitation of photoluminescence. This method is especially promising for the study of wide-gap semiconductors. The results of the study of semiconductor structures used in modern high-power multimode semiconductor lasers are presented. (laser applications and other topics in quantum electronics)
Squeezing in an injection-locked semiconductor laser
Inoue, S.; Machida, S.; Yamamoto, Y.; Ohzu, H.
1993-09-01
The intensity-noise properties of an injection-locked semiconductor laser were studied experimentally. The constant-current-driven semiconductor laser producing the amplitude-squeezed state whose intensity noise was reduced below the standard quantum limit (SQL) by 0.72 dB was injection-locked by an external master laser. The measured intensity-noise level of the injection-locked semiconductor laser was 0.91 dB below the SQL. This experimental result indicates that a phase-coherent amplitude-squeezed state or squeezed vacuum state together with a reference local oscillator wave can be generated directly by semiconductor laser systems.
Stable aerobic granules in continuous-flow bioreactor with self-forming dynamic membrane.
Liu, Hongbo; Li, Yajie; Yang, Changzhu; Pu, Wenhong; He, Liu; Bo, Fu
2012-10-01
A novel continuous-flow bioreactor with aerobic granular sludge and self-forming dynamic membrane (CGSFDMBR) was developed for efficient wastewater treatment. Under continuous-flow operation, aerobic granular sludge was successfully cultivated and characterized with small particle size of about 0.1-1.0mm, low settling velocity of about 15-25 m/h, loose structure and high water content of about 96-98%. To maintain the stability of aerobic granular sludge, strategies based on the differences of settling velocity and particle-size between granular and flocculent sludge were implemented. Moreover, in CGSFDMBR, membrane fouling was greatly relieved. Dynamic membrane was just cleaned once in more than 45 days' operation. CGSFDMBR presented good performance in treating septic tank wastewater, obtaining average COD, NH(4)(+)-N, TN and TP removal rates of 83.3%, 73.3%, 67.3% and 60%, respectively, which was more efficient than conventional bioreactors since that carbon, nitrogen and phosphorus were simultaneously removed in a single aerobic reactor. Copyright © 2012 Elsevier Ltd. All rights reserved.
Hermite-Gaussian beams with self-forming spiral phase distribution
Zinchik, Alexander A.; Muzychenko, Yana B.
2014-05-01
Spiral laser beams is a family of laser beams that preserve the structural stability up to scale and rotate with the propagation. Properties of spiral beams are of practical interest for laser technology, medicine and biotechnology. Researchers use a spiral beams for movement and manipulation of microparticles. Spiral beams have a complicated phase distribution in cross section. This paper describes the results of analytical and computer simulation of Hermite-Gaussian beams with self-forming spiral phase distribution. In the simulation used a laser beam consisting of the sum of the two modes HG TEMnm and TEMn1m1. The coefficients n1, n, m1, m were varied. Additional phase depending from the coefficients n, m, m1, n1 imposed on the resulting beam. As a result, formed the Hermite Gaussian beam phase distribution which takes the form of a spiral in the process of distribution. For modeling was used VirtualLab 5.0 (manufacturer LightTrans GmbH).
Isotope-based quantum information
International Nuclear Information System (INIS)
Plekhanov, Vladimir G.
2012-01-01
The present book provides to the main ideas and techniques of the rapid progressing field of quantum information and quantum computation using isotope - mixed materials. It starts with an introduction to the isotope physics and then describes of the isotope - based quantum information and quantum computation. The ability to manipulate and control electron and/or nucleus spin in semiconductor devices provides a new route to expand the capabilities of inorganic semiconductor-based electronics and to design innovative devices with potential application in quantum computing. One of the major challenges towards these objectives is to develop semiconductor-based systems and architectures in which the spatial distribution of spins and their properties can be controlled. For instance, to eliminate electron spin decoherence resulting from hyperfine interaction due to nuclear spin background, isotopically controlled devices are needed (i.e., nuclear spin-depleted). In other emerging concepts, the control of the spatial distribution of isotopes with nuclear spins is a prerequisite to implement the quantum bits (or qbits). Therefore, stable semiconductor isotopes are important elements in the development of solid-state quantum information. There are not only different algorithms of quantum computation discussed but also the different models of quantum computers are presented. With numerous illustrations this small book is of great interest for undergraduate students taking courses in mesoscopic physics or nanoelectronics as well as quantum information, and academic and industrial researches working in this field.
Unbound states in quantum heterostructures
Directory of Open Access Journals (Sweden)
Ferreira R
2006-01-01
Full Text Available AbstractWe report in this review on the electronic continuum states of semiconductor Quantum Wells and Quantum Dots and highlight the decisive part played by the virtual bound states in the optical properties of these structures. The two particles continuum states of Quantum Dots control the decoherence of the excited electron – hole states. The part played by Auger scattering in Quantum Dots is also discussed.
Integrated Broadband Quantum Cascade Laser
Mansour, Kamjou (Inventor); Soibel, Alexander (Inventor)
2016-01-01
A broadband, integrated quantum cascade laser is disclosed, comprising ridge waveguide quantum cascade lasers formed by applying standard semiconductor process techniques to a monolithic structure of alternating layers of claddings and active region layers. The resulting ridge waveguide quantum cascade lasers may be individually controlled by independent voltage potentials, resulting in control of the overall spectrum of the integrated quantum cascade laser source. Other embodiments are described and claimed.
Energy Technology Data Exchange (ETDEWEB)
Marstein Erik Stensrud
2003-07-01
This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)
33rd International Conference on the Physics of Semiconductors
International Nuclear Information System (INIS)
2017-01-01
Preface to the Proceedings of the 33rd International Conference on the Physics of Semiconductors, Beijing, 2016 Shaoyun Huang 1 , Yingjie Xing 1 , Yang Ji 2 , Dapeng Yu 3 , and Hongqi Xu 1 1 Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China 2 SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 3 State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China From July 31 st to August 5 th , 2016, the 33rd International Conference on the Physics of Semiconductors (ICPS 2016) was held in Beijing, China, with a great success. The International Conference on the Physics of Semiconductors began in the 1950’s and is a premier biennial meeting for reporting all aspects of semiconductor physics including electronic, structural, optical, magnetic and transport properties. Reflecting the state of the art developments in semiconductor physics, ICPS 2016 served as an international forum for scholars, researchers, and specialists across the globe to discuss future research directions and technological advancements. The main topics of ICPS 2016 included: • Material growth, structural properties and characterization, phonons • Wide-bandgap semiconductors • Narrow-bandgap semiconductors • Carbon: nanotubes and graphene • 2D Materials beyond graphene • Organic semiconductors • Topological states of matter, topological Insulators and Weyl semimetals • Transport in heterostructures • Quantum Hall effects • Spintronics and spin phenomena • Electron devices and applications • Optical properties, optoelectronics, solar cells • Quantum optics, nanophotonics • Quantum information • Other topics in semiconductor physics and devices • Special topic: Majorana fermions in solid state (paper)
Simulation of semiconductor devices
International Nuclear Information System (INIS)
Oriato, D.
2001-09-01
In this thesis a drift diffusion model coupled with self-consistent solutions of Poisson's and Schroedinger's equations, is developed and used to investigate the operation of Gunn diodes and GaN-based LEDs. The model also includes parameters derived from Monte Carlo calculations of the simulated devices. In this way the characteristics of a Monte Carlo approach and of a quantum solver are built into a fast and flexible drift-diffusion model that can be used for testing a large number of heterostructure designs in a time-effective way. The full model and its numerical implementation are described in chapter 2. In chapter 3 the theory of Gunn diodes is presented. A basic model of the dynamics of domain formation and domain transport is described with particular regard to accumulation and dipole domains. Several modes of operation of the Gunn device are described, varying from the resonance mode to the quenched mode. Details about transferred electron devices and negative differential resistance in semiconductor materials are given. In chapter 4 results from the simulation of a simple conventional gunn device confirm the importance of the doping condition at the cathode. Accumulation or dipole domains are achieved respectively with high and low doping densities. The limits of a conventional Gunn diode are explained and solved by introducing the heterostructure Gunn diode. This new design consists of a conventional GaAs transit region coupled with an electron launcher at the cathode, made using an AIGaAs heterostructure step. Simulations show the importance of the insertion of a thin highly-doped layer between the transit region and the electron launcher in order to improve device operation. Chapter 5 is an introduction to Ill-nitrides, in particular GaN and its alloy ln-GaN. We outline the discrepancy in the elastic and piezoelectric parameters found in the literature. Strain, dislocations and piezoelectricity are presented as the main features of a InGaN/GaN system
Fundamentals of semiconductor devices
Lindmayer, Joseph
1965-01-01
Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.
Energy Technology Data Exchange (ETDEWEB)
Feng, Liefeng, E-mail: fengliefeng@tju.edu.cn, E-mail: lihongru@nankai.edu.cn; Yang, Xiufang; Wang, Cunda; Yao, Dongsheng [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin 300072 (China); Li, Yang [Business and Vocational College of Hainan, Haikou 570203 (China); Li, Ding; Hu, Xiaodong [Research Center for Wide Band Gap Semiconductors, State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Li, Hongru, E-mail: fengliefeng@tju.edu.cn, E-mail: lihongru@nankai.edu.cn [State Key Laboratory for Medicinal Chemistry and Biology, College of Pharmacy, Nankai University, Tianjin 300071 (China)
2015-04-15
The junction behavior of different narrow band-gap multi-quantum-well (MQW) laser diodes (LDs) confirmed that the jump in the junction voltage in the threshold region is a general characteristic of narrow band-gap LDs. The relative change in the 1310 nm LD is the most obvious. To analyze this sudden voltage change, the threshold region is divided into three stages by I{sub th}{sup l} and I{sub th}{sup u}, as shown in Fig. 2; I{sub th}{sup l} is the conventional threshold, and as long as the current is higher than this threshold, lasing exists and the IdV/dI-I plot drops suddenly; I{sub th}{sup u} is the steady lasing point, at which the separation of the quasi-Fermi levels of electron and holes across the active region (V{sub j}) is suddenly pinned. Based on the evolutionary model of dissipative structure theory, the rate equations of the photons in a single-mode LD were deduced in detail at I{sub th}{sup l} and I{sub th}{sup u}. The results proved that the observed behavior of stimulated emission suddenly substituting for spontaneous emission, in a manner similar to biological evolution, must lead to a sudden increase in the injection carriers in the threshold region, which then causes the sudden increase in the junction voltage in this region.
Papatryfonos, Konstantinos; Saladukha, Dzianis; Merghem, Kamel; Joshi, Siddharth; Lelarge, Francois; Bouchoule, Sophie; Kazazis, Dimitrios; Guilet, Stephane; Le Gratiet, Luc; Ochalski, Tomasz J.; Huyet, Guillaume; Martinez, Anthony; Ramdane, Abderrahim
2017-02-01
Single-mode diode lasers on an InP(001) substrate have been developed using InAs/In0.53Ga0.47As quantum dash (Qdash) active regions and etched lateral Bragg gratings. The lasers have been designed to operate at wavelengths near 2 μm and exhibit a threshold current of 65 mA for a 600 μm long cavity, and a room temperature continuous wave output power per facet >5 mW. Using our novel growth approach based on the low ternary In0.53Ga0.47As barriers, we also demonstrate ridge-waveguide lasers emitting up to 2.1 μm and underline the possibilities for further pushing the emission wavelength out towards longer wavelengths with this material system. By introducing experimentally the concept of high-duty-cycle lateral Bragg gratings, a side mode suppression ratio of >37 dB has been achieved, owing to an appreciably increased grating coupling coefficient of κ ˜ 40 cm-1. These laterally coupled distributed feedback (LC-DFB) lasers combine the advantage of high and well-controlled coupling coefficients achieved in conventional DFB lasers, with the regrowth-free fabrication process of lateral gratings, and exhibit substantially lower optical losses compared to the conventional metal-based LC-DFB lasers.
International Nuclear Information System (INIS)
Feng, Liefeng; Yang, Xiufang; Wang, Cunda; Yao, Dongsheng; Li, Yang; Li, Ding; Hu, Xiaodong; Li, Hongru
2015-01-01
The junction behavior of different narrow band-gap multi-quantum-well (MQW) laser diodes (LDs) confirmed that the jump in the junction voltage in the threshold region is a general characteristic of narrow band-gap LDs. The relative change in the 1310 nm LD is the most obvious. To analyze this sudden voltage change, the threshold region is divided into three stages by I th l and I th u , as shown in Fig. 2; I th l is the conventional threshold, and as long as the current is higher than this threshold, lasing exists and the IdV/dI-I plot drops suddenly; I th u is the steady lasing point, at which the separation of the quasi-Fermi levels of electron and holes across the active region (V j ) is suddenly pinned. Based on the evolutionary model of dissipative structure theory, the rate equations of the photons in a single-mode LD were deduced in detail at I th l and I th u . The results proved that the observed behavior of stimulated emission suddenly substituting for spontaneous emission, in a manner similar to biological evolution, must lead to a sudden increase in the injection carriers in the threshold region, which then causes the sudden increase in the junction voltage in this region
Self-formed conductive nanofilaments in (Bi, Mn)Ox for ultralow-power memory devices
Kang, Chen Fang
2015-04-01
Resistive random access memory (RRAM) is one of the most promising candidates as a next generation nonvolatile memory (NVM), owing to its superior scalability, low power consumption and high speed. From the materials science point of view, to explore optimal RRAM materials is still essential for practical application. In this work, a new material (Bi, Mn)Ox (BMO) is investigated and several key performance characteristics of Pt/BMO/Pt structured device, including switching performance, retention and endurance, are examined in details. Furthermore, it has been confirmed by high-resolution transmission electron microscopy that the underlying switching mechanism is attributed to formation and disruption of metallic conducting nanofilaments (CNFs). More importantly, the power dissipation for each CNF is as low as 3.8/20fJ for set/reset process, and a realization of cross-bar structure memory cell is demonstrated to prove the downscaling ability of proposed RRAM. These distinctive properties have important implications for understanding switching mechanisms and implementing ultralow power-dissipation RRAM based on BMO. •Self-formed conductive nanofilaments in BMO show ultralow-power memory feature.•The feature of 10nm in diameter and an average 20-30nm spacing of CNFs suggests the compatibility with the current CMOS technologies.•Power dissipation for each CNF is as low as 3.8/20fJ for set/reset process•A realization of cross-bar structure memory cell is demonstrated to prove the downscaling ability of proposed RRAM. © 2015 Elsevier Ltd.
Isotope-based quantum information
G Plekhanov, Vladimir
2012-01-01
The present book provides to the main ideas and techniques of the rapid progressing field of quantum information and quantum computation using isotope - mixed materials. It starts with an introduction to the isotope physics and then describes of the isotope - based quantum information and quantum computation. The ability to manipulate and control electron and/or nucleus spin in semiconductor devices provides a new route to expand the capabilities of inorganic semiconductor-based electronics and to design innovative devices with potential application in quantum computing. One of the major challenges towards these objectives is to develop semiconductor-based systems and architectures in which the spatial distribution of spins and their properties can be controlled. For instance, to eliminate electron spin decoherence resulting from hyperfine interaction due to nuclear spin background, isotopically controlled devices are needed (i.e., nuclear spin-depleted). In other emerging concepts, the control of the spatial...
Theory of Defects in Semiconductors
Drabold, David A
2007-01-01
Semiconductor science and technology is the art of defect engineering. The theoretical modeling of defects has improved dramatically over the past decade. These tools are now applied to a wide range of materials issues: quantum dots, buckyballs, spintronics, interfaces, amorphous systems, and many others. This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. Today's state-of-the-art, as well as tomorrow’s tools, are discussed: the supercell-pseudopotential method, the GW formalism,Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments, etc. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.
Solid spectroscopy: semiconductors
International Nuclear Information System (INIS)
Silva, C.E.T.G. da
1983-01-01
Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt
Controlling the emission wavelength in group III-V semiconductor laser diodes
Ooi, Boon S.
2016-12-29
Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.
High resolution STEM of quantum dots and quantum wires
DEFF Research Database (Denmark)
Kadkhodazadeh, Shima
2013-01-01
This article reviews the application of high resolution scanning transmission electron microscopy (STEM) to semiconductor quantum dots (QDs) and quantum wires (QWRs). Different imaging and analytical techniques in STEM are introduced and key examples of their application to QDs and QWRs...
Le Bellac, Michel
2006-03-01
Quantum physics allows us to understand the nature of the physical phenomena which govern the behavior of solids, semi-conductors, lasers, atoms, nuclei, subnuclear particles and light. In Quantum Physics, Le Bellac provides a thoroughly modern approach to this fundamental theory. Throughout the book, Le Bellac teaches the fundamentals of quantum physics using an original approach which relies primarily on an algebraic treatment and on the systematic use of symmetry principles. In addition to the standard topics such as one-dimensional potentials, angular momentum and scattering theory, the reader is introduced to more recent developments at an early stage. These include a detailed account of entangled states and their applications, the optical Bloch equations, the theory of laser cooling and of magneto-optical traps, vacuum Rabi oscillations, and an introduction to open quantum systems. This is a textbook for a modern course on quantum physics, written for advanced undergraduate and graduate students. Completely original and contemporary approach, using algebra and symmetry principles Introduces recent developments at an early stage, including many topics that cannot be found in standard textbooks. Contains 130 physically relevant exercises
Semiconductor optoelectronic infrared spectroscopy
International Nuclear Information System (INIS)
Hollingworth, A.R.
2001-08-01
We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore
International Nuclear Information System (INIS)
El-Arabi, N. M.
1993-01-01
Transport phenomena in two dimensional semiconductors have revealed unusual properties. In this thesis these systems are considered and discussed. The theories explain the Integral Quantum Hall Effect (IQHE) and the Fractional Quantum Hall Effect (FQHE). The thesis is composed of five chapters. The first and the second chapters lay down the theory of the IQHE, the third and fourth consider the theory of the FQHE. Chapter five deals with the statistics of particles in two dimension. (author). Refs
International Nuclear Information System (INIS)
Gribbin, John.
1985-01-01
The paper traces the development of quantum physics, from the early past of this century to modern applications including solid-state devices. The early quantum studies on the model of the atom, carried out by Niels Bohr, are described, as well as the work by Heisenberg and colleagues on matrix mechanics. De Broglie wavelength; particles and waves; uncertainty principles; lasers; and semiconductor systems; are all briefly discussed. (U.K.)
Slow and fast light in semiconductor waveguides
DEFF Research Database (Denmark)
Mørk, Jesper; Hansen, Per Lunnemann; Xue, Weiqi
2010-01-01
Investigations of slow and fast light effects in semiconductor waveguides entail interesting physics and point to a number of promising applications. In this review we give an overview of recent progress in the field, in particular focusing on the physical mechanisms of electromagnetically induced...... transparency and coherent population oscillations. While electromagnetically induced transparency has been the most important effect in realizing slowdown effects in atomic gasses, progress has been comparatively slow in semiconductors due to inherent problems of fast dephasing times and inhomogeneous...... broadening in quantum dots. The physics of electromagnetically induced transparency in semiconductors is discussed, emphasizing these limitations and recent suggestions for overcoming them. On the other hand, the mechanism of coherent population oscillations relies on wave mixing effects and is well suited...
Hybrid system of semiconductor and photosynthetic protein
International Nuclear Information System (INIS)
Kim, Younghye; Shin, Seon Ae; Lee, Jaehun; Yang, Ki Dong; Nam, Ki Tae
2014-01-01
Photosynthetic protein has the potential to be a new attractive material for solar energy absorption and conversion. The development of semiconductor/photosynthetic protein hybrids is an example of recent progress toward efficient, clean and nanostructured photoelectric systems. In the review, two biohybrid systems interacting through different communicating methods are addressed: (1) a photosynthetic protein immobilized semiconductor electrode operating via electron transfer and (2) a hybrid of semiconductor quantum dots and photosynthetic protein operating via energy transfer. The proper selection of materials and functional and structural modification of the components and optimal conjugation between them are the main issues discussed in the review. In conclusion, we propose the direction of future biohybrid systems for solar energy conversion systems, optical biosensors and photoelectric devices. (topical reviews)
Optical Biosensors Based on Semiconductor Nanostructures
Directory of Open Access Journals (Sweden)
Raúl J. Martín-Palma
2009-06-01
Full Text Available The increasing availability of semiconductor-based nanostructures with novel and unique properties has sparked widespread interest in their use in the field of biosensing. The precise control over the size, shape and composition of these nanostructures leads to the accurate control of their physico-chemical properties and overall behavior. Furthermore, modifications can be made to the nanostructures to better suit their integration with biological systems, leading to such interesting properties as enhanced aqueous solubility, biocompatibility or bio-recognition. In the present work, the most significant applications of semiconductor nanostructures in the field of optical biosensing will be reviewed. In particular, the use of quantum dots as fluorescent bioprobes, which is the most widely used application, will be discussed. In addition, the use of some other nanometric structures in the field of biosensing, including porous semiconductors and photonic crystals, will be presented.
International Nuclear Information System (INIS)
Mooij, Hans
2005-01-01
Superconducting devices can be used to explore the boundaries between the quantum and classical worlds, and could also have applications in quantum information. The quantum world looks very different to the ordinary world. A quantum particle can, for instance, be in two places simultaneously, while its speed and position cannot both be measured with complete accuracy at the same time. Moreover, if its mass is small enough, a quantum particle can tunnel through energy barriers that its classical counterparts could never cross. Physicists are comfortable with the use of quantum mechanics to describe atomic and subatomic particles. However, in recent years we have discovered that micron-sized objects that have been produced using standard semiconductor-fabrication techniques - objects that are small on everyday scales but large compared with atoms - can also behave as quantum particles. These artificial quantum objects might one day be used as 'quantum bits' in a quantum computer that could perform certain computational tasks much faster than any classical computing device. Before then, however, these devices will allow us to explore the interface between the quantum and classical worlds, and to study how interactions with external degrees of freedom lead to a gradual disappearance of quantum behaviour. (U.K.)
Electrons and Phonons in Semiconductor Multilayers
Ridley, B. K.
1996-11-01
This book provides a detailed description of the quantum confinement of electrons and phonons in semiconductor wells, superlattices and quantum wires, and shows how this affects their mutual interactions. It discusses the transition from microscopic to continuum models, emphasizing the use of quasi-continuum theory to describe the confinement of optical phonons and electrons. The hybridization of optical phonons and their interactions with electrons are treated, as are other electron scattering mechanisms. The book concludes with an account of the electron distribution function in three-, two- and one-dimensional systems, in the presence of electrical or optical excitation. This text will be of great use to graduate students and researchers investigating low-dimensional semiconductor structures, as well as to those developing new devices based on these systems.
Electronic properties of semiconductor surfaces and metal/semiconductor interfaces
Energy Technology Data Exchange (ETDEWEB)
Tallarida, M.
2005-05-15
This thesis reports investigations of the electronic properties of a semiconductor surface (silicon carbide), a reactive metal/semiconductor interface (manganese/silicon) and a non-reactive metal/semiconductor interface (aluminum-magnesium alloy/silicon). The (2 x 1) reconstruction of the 6H-SiC(0001) surface has been obtained by cleaving the sample along the (0001) direction. This reconstruction has not been observed up to now for this compound, and has been compared with those of similar elemental semiconductors of the fourth group of the periodic table. This comparison has been carried out by making use of photoemission spectroscopy, analyzing the core level shifts of both Si 2p and C 1s core levels in terms of charge transfer between atoms of both elements and in different chemical environments. From this comparison, a difference between the reconstruction on the Si-terminated and the C-terminated surface was established, due to the ionic nature of the Si-C bond. The growth of manganese films on Si(111) in the 1-5 ML thickness range has been studied by means of LEED, STM and photoemission spectroscopy. By the complementary use of these surface science techniques, two different phases have been observed for two thickness regimes (<1 ML and >1 ML), which exhibit a different electronic character. The two reconstructions, the (1 x 1)-phase and the ({radical}3 x {radical}3)R30 -phase, are due to silicide formation, as observed in core level spectroscopy. The growth proceeds via island formation in the monolayer regime, while the thicker films show flat layers interrupted by deep holes. On the basis of STM investigations, this growth mode has been attributed to strain due to lattice mismatch between the substrate and the silicide. Co-deposition of Al and Mg onto a Si(111) substrate at low temperature (100K) resulted in the formation of thin alloy films. By varying the relative content of both elements, the thin films exhibited different electronic properties
Compound Semiconductor Radiation Detector
International Nuclear Information System (INIS)
Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.
2005-01-01
In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too
Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces
International Nuclear Information System (INIS)
Birner, Stefan
2011-01-01
The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano 3 software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano 3 software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model to recently
Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces
Energy Technology Data Exchange (ETDEWEB)
Birner, Stefan
2011-11-15
The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano{sup 3} software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano{sup 3} software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model
Microbial synthesis of chalcogenide semiconductor nanoparticles: a review.
Jacob, Jaya Mary; Lens, Piet N L; Balakrishnan, Raj Mohan
2016-01-01
Chalcogenide semiconductor quantum dots are emerging as promising nanomaterials due to their size tunable optoelectronic properties. The commercial synthesis and their subsequent integration for practical uses have, however, been contorted largely due to the toxicity and cost issues associated with the present chemical synthesis protocols. Accordingly, there is an immediate need to develop alternative environment-friendly synthesis procedures. Microbial factories hold immense potential to achieve this objective. Over the past few years, bacteria, fungi and yeasts have been experimented with as eco-friendly and cost-effective tools for the biosynthesis of semiconductor quantum dots. This review provides a detailed overview about the production of chalcogen-based semiconductor quantum particles using the inherent microbial machinery. © 2015 The Authors. Microbial Biotechnology published by John Wiley & Sons Ltd and Society for Applied Microbiology.
Semiconductor apparatus and method of fabrication for a semiconductor apparatus
2010-01-01
The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the
Colloidal quantum dot photodetectors
Konstantatos, Gerasimos; Sargent, Edward H.
2011-01-01
in particular on visible-, near-infrared, and short-wavelength infrared photodetectors based on size-effect-tuned semiconductor nanoparticles made using quantum-confined PbS, PbSe, Bi 2S3, and In2S3. These devices have in recent years achieved room-temperature D
Solar Cells Using Quantum Funnels
Kramer, Illan J.
2011-09-14
Colloidal quantum dots offer broad tuning of semiconductor bandstructure via the quantum size effect. Devices involving a sequence of layers comprised of quantum dots selected to have different diameters, and therefore bandgaps, offer the possibility of funneling energy toward an acceptor. Here we report a quantum funnel that efficiently conveys photoelectrons from their point of generation toward an intended electron acceptor. Using this concept we build a solar cell that benefits from enhanced fill factor as a result of this quantum funnel. This concept addresses limitations on transport in soft condensed matter systems and leverages their advantages in large-area optoelectronic devices and systems. © 2011 American Chemical Society.
Electrical control of single hole spins in nanowire quantum dots
Pribiag, V.S.; Nadj-Perge, S.; Frolov, S.M.; Berg, J.W.G.; Weperen, van I.; Plissard, S.R.; Bakkers, E.P.A.M.; Kouwenhoven, L.P.
2013-01-01
The development of viable quantum computation devices will require the ability to preserve the coherence of quantum bits (qubits)1. Single electron spins in semiconductor quantum dots are a versatile platform for quantum information processing, but controlling decoherence remains a considerable
The physics of semiconductors an introduction including nanophysics and applications
Grundmann, Marius
2016-01-01
The 3rd edition of this successful textbook contains ample material for a comprehensive upper-level undergraduate or beginning graduate course, guiding readers to the point where they can choose a special topic and begin supervised research. The textbook provides a balance between essential aspects of solid-state and semiconductor physics, on the one hand, and the principles of various semiconductor devices and their applications in electronic and photonic devices, on the other. It highlights many practical aspects of semiconductors such as alloys, strain, heterostructures, nanostructures, that are necessary in modern semiconductor research but typically omitted in textbooks. Coverage also includes additional advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, carbon-based nanostructures and transparent conductive oxides. The text derives explicit formulas for many results to support better under...
Semiconductor Physical Electronics
Li, Sheng
2006-01-01
Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...
Manipulating Quantum Coherence in Solid State Systems
Flatté, Michael E; The NATO Advanced Study Institute "Manipulating Quantum Coherence in Solid State Systems"
2007-01-01
The NATO Advanced Study Institute "Manipulating Quantum Coherence in Solid State Systems", in Cluj-Napoca, Romania, August 29-September 9, 2005, presented a fundamental introduction to solid-state approaches to achieving quantum computation. This proceedings volume describes the properties of quantum coherence in semiconductor spin-based systems and the behavior of quantum coherence in superconducting systems. Semiconductor spin-based approaches to quantum computation have made tremendous advances in the past several years. Coherent populations of spins can be oriented, manipulated and detected experimentally. Rapid progress has been made towards performing the same tasks on individual spins (nuclear, ionic, or electronic) with all-electrical means. Superconducting approaches to quantum computation have demonstrated single qubits based on charge eigenstates as well as flux eigenstates. These topics have been presented in a pedagogical fashion by leading researchers in the fields of semiconductor-spin-based qu...
International Nuclear Information System (INIS)
Fomin, Vladimir M.
2014-01-01
Presents the new class of materials of quantum rings. Provides an elemental basis for low-cost high-performance devices promising for electronics, optoelectronics, spintronics and quantum information processing. Explains the physical properties of quantum rings to cover a gap in scientific literature. Presents the application of most advanced nanoengineering and nanocharacterization techniques. This book deals with a new class of materials, quantum rings. Innovative recent advances in experimental and theoretical physics of quantum rings are based on the most advanced state-of-the-art fabrication and characterization techniques as well as theoretical methods. The experimental efforts allow to obtain a new class of semiconductor quantum rings formed by capping self-organized quantum dots grown by molecular beam epitaxy. Novel optical and magnetic properties of quantum rings are associated with non-trivial topologies at the nanoscale. An adequate characterization of quantum rings is possible on the basis of modern characterization methods of nanostructures, such as Scanning Tunneling Microscopy. A high level of complexity is demonstrated to be needed for a dedicated theoretical model to adequately represent the specific features of quantum rings. The findings presented in this book contribute to develop low-cost high-performance electronic, spintronic, optoelectronic and information processing devices based on quantum rings.