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Sample records for self-assembled quantum dots

  1. Coherence and dephasing in self-assembled quantum dots

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Leosson, K.; Birkedal, Dan

    2003-01-01

    We measured dephasing times in InGaAl/As self-assembled quantum dots at low temperature using degenerate four-wave mixing. At 0K, the coherence time of the quantum dots is lifetime limited, whereas at finite temperatures pure dephasing by exciton-phonon interactions governs the quantum dot...

  2. Optical orientation in self assembled quantum dots

    International Nuclear Information System (INIS)

    Stevens, Gregory C.

    2002-01-01

    We examined Zeeman splitting in a series of ln x Ga (1-x) As/GaAs self assembled quantum dots (SAQD's) with different pump polarisations. All these measurements were made in very low external magnetic fields where direct determination of the Zeeman splitting energy is impossible due to its small value in comparison to the photoluminescence linewidths. The use of a technique developed by M. J. Snelling allowed us to obtain the Zeeman splitting and hence the excitonic g-factors indirectly. We observed a linear low field splitting, becoming increasingly non-linear at higher fields. We attribute this non-linearity to field induced level mixing. It is believed these are the first low field measurements in these structures. A number of apparent nuclear effects in the Zeeman splitting measurements led us onto the examination of nuclear effects in these structures. The transverse and oblique Hanie effects then allowed us to obtain the sign of the electronic g-factors in two of our samples, for one sample, a (311) grown In 0.5 Ga 0.5 As/GaAs SAQD sample, we were able to ascertain the spin relaxation time, the maximum value of the nuclear field, and provide evidence of the existence of nuclear spin freezing in at least one of our samples. We have then used a novel technique investigated by D. J. Guerrier, to examine optically detected nuclear magnetic resonance in our samples. We believe this is the first such study on these structures. We could not ascertain the dipolar indium resonance signal, even though all other isotopes were seen. We have therefore suggested a number of possible mechanisms that may be responsible for the lack of an indium resonance signal. (author)

  3. Long lived coherence in self-assembled quantum dots

    DEFF Research Database (Denmark)

    Birkedal, Dan; Leosson, Kristjan; Hvam, Jørn Märcher

    2001-01-01

    We report measurements of ultralong coherence in self-assembled quantum dots. Transient four-wave mixing experiments at 5 K show an average dephasing time of 372 ps, corresponding to a homogeneous linewidth of 3.5 mu eV, which is significantly smaller than the linewidth observed in single...

  4. Templated self-assembly of SiGe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Dais, Christian

    2009-08-19

    This PhD thesis reports on the fabrication and characterization of exact aligned SiGe quantum dot structures. In general, SiGe quantum dots which nucleate via the Stranski-Krastanov growth mode exhibit broad size dispersion and nucleate randomly on the surface. However, to tap the full potential of SiGe quantum dots it is necessary to control the positioning and size of the dots on a nanometer length, e.g. for electronically addressing of individual dots. This can be realized by so-called templated self-assembly, which combines top-down lithography with bottom-up selfassembly. In this process the lithographically defined pits serve as pre-defined nucleation points for the epitaxially grown quantum dots. In this thesis, extreme ultraviolet interference lithography at a wavelength of e=13.4 nm is employed for prepatterning of the Si substrates. This technique allows the precise and fast fabrication of high-resolution templates with a high degree of reproducibility. The subsequent epitaxial deposition is either performed by molecular beam epitaxy or low-pressure chemical vapour deposition. It is shown that the dot nucleation on pre-patterned substrates depends strongly on the lithography parameters, e.g. size and periodicity of the pits, as well as on the epitaxy parameters, e.g. growth temperature or material coverage. The interrelations are carefully analyzed by means of scanning force microscopy, transmission electron microscopy and X-ray diffraction measurements. Provided that correct template and overgrowth parameters are chosen, perfectly aligned and uniform SiGe quantum dot arrays of different period, size as well as symmetry are created. In particular, the quantum dot arrays with the so far smallest period (35 nm) and smallest size dispersion are fabricated in this thesis. Furthermore, the strain fields of the underlying quantum dots allow the fabrication of vertically aligned quantum dot stacks. Combining lateral and vertical dot alignment results in three

  5. Spin-flip transitions in self-assembled quantum dots

    Science.gov (United States)

    Stavrou, V. N.

    2017-12-01

    Detailed realistic calculations of the spin-flip time (T 1) for an electron in a self-assembled quantum dot (SAQD) due to emission of an acoustic phonon, using only bulk properties with no fitting parameters, are presented. Ellipsoidal lens shaped Inx Ga1-x As quantum dots, with electronic states calculated using 8-band strain dependent {k \\cdot p} theory, are considered. The phonons are treated as bulk acoustic phonons coupled to the electron by both deformation potential and piezoelectric interactions. The dependence of T 1 on the geometry of SAQD, on the applied external magnetic field and on the lattice temperature is highlighted. The theoretical results are close to the experimental measurements on the spin-flip times for a single electron in QD.

  6. Cross-sectional nanophotoluminescence studies of Stark effects in self-assembled quantum dots

    International Nuclear Information System (INIS)

    Htoon, H.; Keto, J. W.; Baklenov, O.; Holmes, A. L. Jr.; Shih, C. K.

    2000-01-01

    By using a cross-sectional geometry, we show the capability to perform single-dot spectroscopy in self-assembled quantum dots using far-field optics. By using this method, we study the quantum-confined Stark effect in self-assembled quantum dots. For single-stack quantum dots (QDs), we find that the spectra are redshifted with an increase in electric field. For vertically coupled double-stack quantum dots, while most of the QDs are redshifted, some QDs show blueshifted spectra, which can be interpreted as an evidence of coupled QD molecules. (c) 2000 American Institute of Physics

  7. Highly Efficient Spontaneous Emission from Self-Assembled Quantum Dots

    DEFF Research Database (Denmark)

    Johansen, Jeppe; Lund-Hansen, Toke; Hvam, Jørn Märcher

    2006-01-01

    We present time resolved measurements of spontaneous emission (SE) from InAs/GaAs quantum dots (QDs). The measurements are interpreted using Fermi's Golden Rule and from this analysis we establish the parameters for high quantum efficiency.......We present time resolved measurements of spontaneous emission (SE) from InAs/GaAs quantum dots (QDs). The measurements are interpreted using Fermi's Golden Rule and from this analysis we establish the parameters for high quantum efficiency....

  8. Determination of anisotropic dipole moments in self-assembled quantum dots using Rabi oscillations

    OpenAIRE

    Muller, A.; Wang, Q. Q.; Bianucci, P.; Xue, Q. K.; Shih, C. K.

    2004-01-01

    By investigating the polarization-dependent Rabi oscillations using photoluminescence spectroscopy, we determined the respective transition dipole moments of the two excited excitonic states |Ex> and |Ey> of a single self-assembled quantum dot that are nondegenerate due to shape anisotropy. We find that the ratio of the two dipole moments is close to the physical elongation ratio of the quantum dot.

  9. Height control of self-assembled quantum dots by strain engineering during capping

    NARCIS (Netherlands)

    Grossi, D.; Smereka, P.; Keizer, J.G.; Ulloa, J.M.; Koenraad, P.M.

    2014-01-01

    Strain engineering during the capping of III-V quantum dots has been explored as a means to control the height of strained self-assembled quantum dots. Results of Kinetic Monte Carlo simulations are confronted with cross-sectional Scanning Tunnel Microscopy (STM) measurements performed on InAs

  10. Nonequilibrium carrier dynamics in self-assembled InGaAs quantum dots

    International Nuclear Information System (INIS)

    Wesseli, M.; Ruppert, C.; Trumm, S.; Betz, M.; Krenner, H.J.; Finley, J.J.

    2006-01-01

    Carrier dynamics in InGaAs/GaAs quantum dots is analyzed with highly sensitive femtosecond transmission spectroscopy. In a first step, measurements on a large ensemble of nanoislands reveal the dynamical electronic filling of quantum dots from the surrounding wetting layer. Most interestingly, we find a spin-preserving phonon mediated scattering into fully localized states within a few picoseconds. Then, individual artificial atoms are isolated with metallic shadow masks. For the first time, a single self-assembled quantum dot is addressed in an ultrafast transmission experiment. We find bleaching signals in the order of 10 -5 that arise from individual interband transitions of one quantum dot. As a result, we have developed an ultrafast optical tool for both manipulation and read-out of a single self-assembled quantum dot. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Probing long-lived dark excitons in self-assembled quantum dots

    DEFF Research Database (Denmark)

    Johansen, Jeppe; Julsgaard, Brian; Stobbe, Søren

    2010-01-01

    Long-lived dark exciton states are formed in self-assembled quantum dots due to the combination of the angular momentum of electrons and holes. The lifetime of dark excitons are determined by spin-flip processes that transfer dark excitons into radiative bright excitons. We employ time......-resolved spontaneous emission measurements in a modified local density of optical states to unambiguously record the spin-flip rate. Pronounced variations in the spin-flip rate with the quantum dot emission energy are observed demonstrating that the exciton storage time can be extended by controlling the quantum dot......, which illustrates the important role of interfaces for quantum dot based nanophotonic structures....

  12. Designing spatial correlation of quantum dots: towards self-assembled three-dimensional structures

    International Nuclear Information System (INIS)

    Bortoleto, J R R; Zelcovit, J G; Gutierrez, H R; Bettini, J; Cotta, M A

    2008-01-01

    Buried two-dimensional arrays of InP dots were used as a template for the lateral ordering of self-assembled quantum dots. The template strain field can laterally organize compressive (InAs) as well as tensile (GaP) self-assembled nanostructures in a highly ordered square lattice. High-resolution transmission electron microscopy measurements show that the InAs dots are vertically correlated to the InP template, while the GaP dots are vertically anti-correlated, nucleating in the position between two buried InP dots. Finite InP dot size effects are observed to originate InAs clustering but do not affect GaP dot nucleation. The possibility of bilayer formation with different vertical correlations suggests a new path for obtaining three-dimensional pseudocrystals

  13. Mn-doped Ge self-assembled quantum dots via dewetting of thin films

    Energy Technology Data Exchange (ETDEWEB)

    Aouassa, Mansour, E-mail: mansour.aouassa@yahoo.fr [LMON, Faculté des Sciences de Monastir, Avenue de l’environnement Monastir 5019 (Tunisia); Jadli, Imen [LMON, Faculté des Sciences de Monastir, Avenue de l’environnement Monastir 5019 (Tunisia); Bandyopadhyay, Anup [Department of Mechanical Engineering, Texas A& M University, College Station, TX 77843 (United States); Kim, Sung Kyu [Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Yuseong-daero 1689-gil, Yuseong-gu, Daejeon (Korea, Republic of); Department of Materials Science and Engineering, KAIST 291 Daehak-ro, Yuseong-gu, Daejeon (Korea, Republic of); Karaman, Ibrahim [Department of Mechanical Engineering, Texas A& M University, College Station, TX 77843 (United States); Lee, Jeong Yong [Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Yuseong-daero 1689-gil, Yuseong-gu, Daejeon (Korea, Republic of); Department of Materials Science and Engineering, KAIST 291 Daehak-ro, Yuseong-gu, Daejeon (Korea, Republic of)

    2017-03-01

    Highlights: • We report the new fabrication approach for producing a self- assembled Mn dpoed Ge quantum dots (QDs) on SiO{sub 2} thin film with a Curie temperature above room temperature. These magnetic QDs are crystalline, monodisperse and have a well-defined shape and a controlled size. The investigation opens new routes for elaboration of self-assembled magnetic nanocrystals - Abstract: In this study, we demonstrate an original elaboration route for producing a Mn-doped Ge self-assembled quantum dots on SiO{sub 2} thin layer for MOS structure. These magnetic quantum dots are elaborated using dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing at high temperature of an amorphous Ge:Mn (Mn: 40%) nanolayer deposed at very low temperature by high-precision Solid Source Molecular Beam Epitaxy on SiO{sub 2} thin film. The size of quantum dots is controlled with nanometer scale precision by varying the nominal thickness of amorphous film initially deposed. The magnetic properties of the quantum-dots layer have been investigated by superconducting quantum interference device (SQUID) magnetometry. Atomic force microscopy (AFM), x-ray energy dispersive spectroscopy (XEDS) and transmission electron microscopy (TEM) were used to examine the nanostructure of these materials. Obtained results indicate that GeMn QDs are crystalline, monodisperse and exhibit a ferromagnetic behavior with a Curie temperature (TC) above room temperature. They could be integrated into spintronic technology.

  14. Determination of anisotropic dipole moments in self-assembled quantum dots using Rabi oscillations

    Science.gov (United States)

    Muller, Andreas; Wang, Qu-Quan; Bianucci, Pablo; Xue, Qi-Kun; Shih, Chih-Kang

    2004-03-01

    By investigating the polarization-dependent Rabi oscillations using photoluminescence spectroscopy, we determined the respective transition dipole moments of the two excited excitonic states |Ex> and |Ey> of a single self-assembled quantum dot that are nondegenerate due to shape anisotropy. We find that the ratio of the two dipole moments is close to the physical elongation ratio of the quantum dot. We also measured the ground state radiative lifetimes of several quantum dots. The dipole moments calculated from the latter are in reasonable agreement with the dipole moments determined from the periodicity of the Rabi oscillations.

  15. Formation of self assembled PbTe quantum dots in CdTe on Si(111)

    Science.gov (United States)

    Felder, F.; Fognini, A.; Rahim, M.; Fill, M.; Müller, E.; Zogg, H.

    2010-01-01

    We describe the growth and formation of self assembled PbTe quantum dots in a CdTe host on a silicon (111) substrate. Annealing yields different photoluminescence spectra depending on initial PbTe layer thickness, thickness of the CdTe cap layer and annealing temperature. Generally two distinct emission peaks at ˜0.3 eV and ˜0.45 eV are visible. Model calculations explaining their temperature dependence are performed. The dot size corresponds well with the estimated sizes from electron microscopy images. The quantum dots may be used as absorber within a mid-infrared detector.

  16. Multiphonon capture processes in self-assembled quantum dots

    DEFF Research Database (Denmark)

    Magnúsdóttir, Ingibjörg; Uskov, A.; Bischoff, Svend

    2001-01-01

    We investigate capture of carriers from states in the continuous part of the energy spectrum into the discrete states of self-assembled InAs/GaAs QDs via emission of one or two phonons. We are not aware of any other investigations of two-phonon mediated capture processes in QDs, but we show...

  17. Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes

    Directory of Open Access Journals (Sweden)

    Heyn Ch

    2009-01-01

    Full Text Available Abstract Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generates strain-free GaAs quantum dots with either broadband optical emission or sharp photoluminescence (PL lines. Broadband emission is found for samples with completely filled flat holes, which have a very broad depth distribution. On the other hand, partly filling of deep holes yield highly uniform quantum dots with very sharp PL lines.

  18. On-Chip Single-Plasmon Nanocircuit Driven by a Self-Assembled Quantum Dot.

    Science.gov (United States)

    Wu, Xiaofei; Jiang, Ping; Razinskas, Gary; Huo, Yongheng; Zhang, Hongyi; Kamp, Martin; Rastelli, Armando; Schmidt, Oliver G; Hecht, Bert; Lindfors, Klas; Lippitz, Markus

    2017-07-12

    Quantum photonics holds great promise for future technologies such as secure communication, quantum computation, quantum simulation, and quantum metrology. An outstanding challenge for quantum photonics is to develop scalable miniature circuits that integrate single-photon sources, linear optical components, and detectors on a chip. Plasmonic nanocircuits will play essential roles in such developments. However, for quantum plasmonic circuits, integration of stable, bright, and narrow-band single photon sources in the structure has so far not been reported. Here we present a plasmonic nanocircuit driven by a self-assembled GaAs quantum dot. Through a planar dielectric-plasmonic hybrid waveguide, the quantum dot efficiently excites narrow-band single plasmons that are guided in a two-wire transmission line until they are converted into single photons by an optical antenna. Our work demonstrates the feasibility of fully on-chip plasmonic nanocircuits for quantum optical applications.

  19. Long-range energy transfer in self-assembled quantum dot-DNA cascades

    Science.gov (United States)

    Goodman, Samuel M.; Siu, Albert; Singh, Vivek; Nagpal, Prashant

    2015-11-01

    The size-dependent energy bandgaps of semiconductor nanocrystals or quantum dots (QDs) can be utilized in converting broadband incident radiation efficiently into electric current by cascade energy transfer (ET) between layers of different sized quantum dots, followed by charge dissociation and transport in the bottom layer. Self-assembling such cascade structures with angstrom-scale spatial precision is important for building realistic devices, and DNA-based QD self-assembly can provide an important alternative. Here we show long-range Dexter energy transfer in QD-DNA self-assembled single constructs and ensemble devices. Using photoluminescence, scanning tunneling spectroscopy, current-sensing AFM measurements in single QD-DNA cascade constructs, and temperature-dependent ensemble devices using TiO2 nanotubes, we show that Dexter energy transfer, likely mediated by the exciton-shelves formed in these QD-DNA self-assembled structures, can be used for efficient transport of energy across QD-DNA thin films.The size-dependent energy bandgaps of semiconductor nanocrystals or quantum dots (QDs) can be utilized in converting broadband incident radiation efficiently into electric current by cascade energy transfer (ET) between layers of different sized quantum dots, followed by charge dissociation and transport in the bottom layer. Self-assembling such cascade structures with angstrom-scale spatial precision is important for building realistic devices, and DNA-based QD self-assembly can provide an important alternative. Here we show long-range Dexter energy transfer in QD-DNA self-assembled single constructs and ensemble devices. Using photoluminescence, scanning tunneling spectroscopy, current-sensing AFM measurements in single QD-DNA cascade constructs, and temperature-dependent ensemble devices using TiO2 nanotubes, we show that Dexter energy transfer, likely mediated by the exciton-shelves formed in these QD-DNA self-assembled structures, can be used for efficient

  20. Strain and spin-orbit effects in self-assembled quantum dots

    International Nuclear Information System (INIS)

    Zielinski, M.; Jaskolski, W.; Aizpurua, J.; Bryant, G.W.

    2005-01-01

    The Effects of strain and spin-orbit interaction in self-assembled lien-shaped InAs/GaAs quantum dots are investigated. Calculations are performed with empirical tight-binding theory supplemented by the valence force field method to account for effects of strain caused by lattice mismatch at the InAs-GaAs interface. It is shown that both effects influence strongly the electron and hole energy structure: splitting of the energy levels, the number of bound states, density distributions, and transition rates. We show that piezoelectric effects are almost negligible in quantum dots of the size investigated. (author)

  1. The spectral analysis and threshold limits of quasi-supercontinuum self-assembled quantum dot interband lasers

    KAUST Repository

    Tan, Cheeloon; Wang, Yang; Djie, Hery Susanto; Ooi, Boon S.

    2009-01-01

    This paper presents a theoretical model to explain the quasi-supercontinuum interband emission from InGaAs/GaAs self-assembled semiconductor quantum dot lasers by accounting for both inhomogeneous and homogeneous optical gain broadening

  2. Carrier emission from the electronic states of self-assembled indium arsenide quantum dots

    International Nuclear Information System (INIS)

    Lin, S.W.; Song, A.M.; Missous, M.; Hawkins, I.D; Hamilton, B.; Engstroem, O.; Peaker, A.R.

    2006-01-01

    We have used the new technique of high resolution (Laplace) transient spectroscopy to examine the electronic states of ensembles of self-assembled quantum dots of InAs in a GaAs matrix. These have been produced by solid source MBE. We have monitored the s and p state occupancies as a function of time under thermal excitation over a range of temperatures after electrons have been captured by the quantum dots with different Fermi level positions. This can provide more information about the interaction of the dots with the host matrix than is possible with optical techniques and gives new fundamental insights into how such dots may operate in electronic devices such as memory and sensors. The increase in resolution of Laplace transient spectroscopy over conventional experiments reveals quite specific rates of carrier loss which we attribute to tunnelling at low temperatures and a combination of thermal emission and tunnelling as the temperature is increased

  3. Optical spectroscopy of single, planar, self-assembled InAs/InP quantum dots

    International Nuclear Information System (INIS)

    Kim, D.; Williams, R.L.; Lefebvre, J.; Lapointe, J.; Reimer, M.E.; Mckee, J.; Poole, P.J.

    2006-01-01

    We present optical spectra from numerous, single, self-assembled InAs/InP quantum dots. More than 50 individual dots are studied that emit in the 1.1-1.6 mm wavelength range. The dots are of high optical quality as judged by the clean, single exciton emission line at low power, the resolution limited linewidth, and the brightness. Each dot exhibits similar trends in the power evolution spectra, despite large variations in height and diameter. The level splittings in the p -shell increase with decreasing height, which we interpret to be from dot elongation along the [01 anti 1] direction. The evolution of the spectra with increasing power agrees well with predictions from effective bond orbital calculations. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Space charge spectroscopy of self assembled Ge quantum dots in Si

    Energy Technology Data Exchange (ETDEWEB)

    Asperger, T.; Miesner, C.; Brunner, K.; Abstreiter, G. [Technische Univ. Muenchen, Garching (Germany). Walter-Schottky-Inst. fuer Physikalische Grundlagen der Halbleiterelektronik

    2001-03-01

    Admittance spectroscopy was used to investigate the density of states in self assembled Ge quantum dots (QDs) of different size embedded in Si Schottky diodes. From the admittance results, activation energies of hole in the QDs have been determined as a function of the external bias which shifts the Fermi level with respect to the energy states in the QDs. The activation energy of a quantum well sample remains constant up to 6 V bias voltage. Large Ge dots (70 nm diameter) show a continuum of activation energies and a low continuous averaged density of states. In small Ge dots (20 nm diameter) a discrete energy level structure with level separations of 40 to 4 meV are observed. They are attributed to strongly quantum confined hole states with significant Coulomb blockade energies. (orig.)

  5. Direct self-assembling and patterning of semiconductor quantum dots on transferable elastomer layer

    Energy Technology Data Exchange (ETDEWEB)

    Coppola, Sara [Institute of Applied Sciences and Intelligent System- CNR, Via Campi Flegrei 34, Pozzuoli, 80078 (Italy); Vespini, Veronica, E-mail: v.vespini@isasi.cnr.it [Institute of Applied Sciences and Intelligent System- CNR, Via Campi Flegrei 34, Pozzuoli, 80078 (Italy); Olivieri, Federico [Institute of Applied Sciences and Intelligent System- CNR, Via Campi Flegrei 34, Pozzuoli, 80078 (Italy); University of Naples Federico II, Department of Chemical Materials and Production Engineering, Piazzale Tecchio 80, Naples 80125 (Italy); Nasti, Giuseppe; Todino, Michele; Mandracchia, Biagio; Pagliarulo, Vito; Ferraro, Pietro [Institute of Applied Sciences and Intelligent System- CNR, Via Campi Flegrei 34, Pozzuoli, 80078 (Italy)

    2017-03-31

    Highlights: • A quantum dots self-patterning on micrometrical polymeric array is proposed. • The effect of a quantum dots mix on the array is evaluated. • A PDMS membrane is exploited to transfer the pattern on it. - Abstract: Functionalization of thin and stretchable polymer layers by nano- and micro-patterning of nanoparticles is a very promising field of research that can lead to many different applications in biology and nanotechnology. In this work, we present a new procedure to self-assemble semiconductor quantum dots (QDs) nanoparticles by a simple fabrication process on a freestanding flexible PolyDiMethylSiloxane (PDMS) membrane. We used a Periodically Poled Lithium Niobate (PPLN) crystal to imprint a micrometrical pattern on the PDMS membrane that drives the QDs self-structuring on its surface. This process allows patterning QDs with different wavelength emissions in a single step in order to tune the overall emission spectrum of the composite, tuning the QDs mixing ratio.

  6. Spin effects in InAs self-assembled quantum dots

    Directory of Open Access Journals (Sweden)

    Brasil Maria

    2011-01-01

    Full Text Available Abstract We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs in the center of a GaAs quantum well (QW. We have observed that the QD circular polarization degree depends on applied voltage and light intensity. Our results are explained in terms of the tunneling of minority carriers into the QW, carrier capture by InAs QDs and bias-controlled density of holes in the QW.

  7. Size quantization patterns in self-assembled InAs/GaAs quantum dots

    Science.gov (United States)

    Colocci, M.; Bogani, F.; Carraresi, L.; Mattolini, R.; Bosacchi, A.; Franchi, S.; Frigeri, P.; Taddei, S.; Rosa-Clot, M.

    1997-07-01

    Molecular beam epitaxy has been used for growing self-assembled InAs quantum dots. A continuous variation of the InAs average coverage across the sample has been obtained by properly aligning the (001) GaAs substrate with respect to the molecular beam. Excitation of a large number of dots (laser spot diameter ≈ 100 μm) results in structured photoluminescence spectra; a clear quantization of the dot sizes is deduced from the distinct luminescence bands separated in energy by an average spacing of 20-30 meV. We ascribe the individual bands of the photoluminescence spectrum after low excitation to families of dots with roughly the same diameter and heights differing by one monolayer.

  8. Spin injection in self-assembled quantum dots coupled with a diluted magnetic quantum well

    International Nuclear Information System (INIS)

    Murayama, A.; Asahina, T.; Souma, I.; Koyama, T.; Hyomi, K.; Nishibayashi, K.; Oka, Y.

    2007-01-01

    Spin injection is studied in self-assembled quantum dots (QDs) of CdSe coupled with a diluted magnetic semiconductor quantum well (DMS-QW) of Zn 1- x - y Cd x Mn y Se, by means of time-resolved circularly polarized photoluminescence (PL). Excitonic PL from the CdSe QDs shows σ - -circular polarization in magnetic fields, mainly due to negative g-values of individual dots, when the energy difference of excitons between the QDs and DMS-QW is large as 300 meV. However, when such energy difference is comparable with LO-phonon energy in the QD, we observe an additional PL peak with the long lifetime as 3.5 ns and σ + -polarization in magnetic fields. It can be attributed to a type-II transition between the down-spin electron injected from the DMS-QW into the QDs, via LO-phonon-assisted resonant tunneling, and the down-spin heavy hole in the DMS-QW. In addition, the electron spin-injection is also evidenced by σ + -polarized PL with the fast rise-time of 20 ps in the QDs

  9. In-capillary self-assembly and proteolytic cleavage of polyhistidine peptide capped quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jianhao; Li, Jingyan; Li, Jinchen; Liu, Feifei [School of Pharmaceutical Engineering and Life Science, Changzhou University, Changzhou, Jiangsu, 213164 (China); Zhou, Xiang; Yao, Yi [Changzhou Qianhong Bio-pharma Co. Ltd, Changzhou 213164, Jiangsu (China); Wang, Cheli [School of Pharmaceutical Engineering and Life Science, Changzhou University, Changzhou, Jiangsu, 213164 (China); Qiu, Lin, E-mail: linqiupjj@gmail.com [School of Pharmaceutical Engineering and Life Science, Changzhou University, Changzhou, Jiangsu, 213164 (China); Jiang, Pengju, E-mail: pengju.jiang@gmail.com [School of Pharmaceutical Engineering and Life Science, Changzhou University, Changzhou, Jiangsu, 213164 (China); State Key Laboratory of Pharmaceutical Biotechnology, Nanjing, Jiangsu (China)

    2015-10-01

    A new method using fluorescence coupled capillary electrophoresis (CE-FL) for monitoring self-assembly and proteolytic cleavage of hexahistidine peptide capped quantum dots (QDs) inside a capillary has been developed in this report. QDs and the ATTO 590-labeled hexahistidine peptide (H6-ATTO) were injected into a capillary, sequentially. Their self-assembly inside the capillary was driven by a metal-affinity force which yielded a new fluorescence signal due to Förster resonance energy transfer (FRET). The highly efficient separation of fluorescent complexes and the FRET process were analyzed using CE-FL. The self-assembly of QDs and biomolecules was found to effectively take place inside the capillary. The kinetics of the assembly was monitored by CE-FL, and the approach was extended to the study of proteolytic cleavage of surface conjugated peptides. Being the first in-depth analysis of in-capillary nanoparticle–biomolecule assembly, the novel approach reported here provides inspiration to the development of QD-based FRET probes for biomedical applications. - Highlights: • We examined the self-assembly QDs with H6-ATTO inside a capillary. • We prove CE-FL to be a powerful method to resolve QDs-H6-ATTO complex. • We achieve chromatographic separation of QDs-H6-ATTO complex. • We discovered a novel strategy for the online detection of thrombin. • This technique integrated “injection, mixing, reaction, separation and detection”.

  10. Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Bischoff, Svend; Magnúsdóttir, Ingibjörg

    2001-01-01

    Measurements of ultrafast gain recovery in self-assembled InAs quantum-dot (QD) amplifiers are explained by a comprehensive numerical model. The on excited state carriers are found to act as a reservoir for the optically active ground state carriers resulting in an ultrafast gain recovery as long...... as the excited state is well populated. However, when pulses are injected into the device at high-repetition frequencies, the response of a on amplifier is found to be limited by the wetting-layer dynamics....

  11. In-plane nuclear field formation investigated in single self-assembled quantum dots

    Science.gov (United States)

    Yamamoto, S.; Matsusaki, R.; Kaji, R.; Adachi, S.

    2018-02-01

    We studied the formation mechanism of the in-plane nuclear field in single self-assembled In0.75Al0.25As /Al0.3Ga0.7As quantum dots. The Hanle curves with an anomalously large width and hysteretic behavior at the critical transverse magnetic field were observed in many single quantum dots grown in the same sample. In order to explain the anomalies in the Hanle curve indicating the formation of a large nuclear field perpendicular to the photo-injected electron spin polarization, we propose a new model based on the current phenomenological model for dynamic nuclear spin polarization. The model includes the effects of the nuclear quadrupole interaction and the sign inversion between in-plane and out-of-plane components of nuclear g factors, and the model calculations reproduce successfully the characteristics of the observed anomalies in the Hanle curves.

  12. Self-assembled quantum dot structures in a hexagonal nanowire for quantum photonics.

    Science.gov (United States)

    Yu, Ying; Dou, Xiu-Ming; Wei, Bin; Zha, Guo-Wei; Shang, Xiang-Jun; Wang, Li; Su, Dan; Xu, Jian-Xing; Wang, Hai-Yan; Ni, Hai-Qiao; Sun, Bao-Quan; Ji, Yuan; Han, Xiao-Dong; Niu, Zhi-Chuan

    2014-05-01

    Two types of quantum nanostructures based on self-assembled GaAs quantumdots embedded into GaAs/AlGaAs hexagonal nanowire systems are reported, opening a new avenue to the fabrication of highly efficient single-photon sources, as well as the design of novel quantum optics experiments and robust quantum optoelectronic devices operating at higher temperature, which are required for practical quantum photonics applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Statistical analysis of AFM topographic images of self-assembled quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Sevriuk, V. A.; Brunkov, P. N., E-mail: brunkov@mail.ioffe.ru; Shalnev, I. V.; Gutkin, A. A.; Klimko, G. V.; Gronin, S. V.; Sorokin, S. V.; Konnikov, S. G. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-07-15

    To obtain statistical data on quantum-dot sizes, AFM topographic images of the substrate on which the dots under study are grown are analyzed. Due to the nonideality of the substrate containing height differences on the order of the size of nanoparticles at distances of 1-10 {mu}m and the insufficient resolution of closely arranged dots due to the finite curvature radius of the AFM probe, automation of the statistical analysis of their large dot array requires special techniques for processing topographic images to eliminate the loss of a particle fraction during conventional processing. As such a technique, convolution of the initial matrix of the AFM image with a specially selected matrix is used. This makes it possible to determine the position of each nanoparticle and, using the initial matrix, to measure their geometrical parameters. The results of statistical analysis by this method of self-assembled InAs quantum dots formed on the surface of an AlGaAs epitaxial layer are presented. It is shown that their concentration, average size, and half-width of height distribution depend strongly on the In flow and total amount of deposited InAs which are varied within insignificant limits.

  14. Multi-scale ordering of self-assembled InAs/GaAs(001 quantum dots

    Directory of Open Access Journals (Sweden)

    Kiravittaya S

    2006-01-01

    Full Text Available AbstractOrdering phenomena related to the self-assembly of InAs quantum dots (QD grown on GaAs(001 substrates are experimentally investigated on different length scales. On the shortest length-scale studied here, we examine the QD morphology and observe two types of QD shapes, i.e., pyramids and domes. Pyramids are elongated along the 12345678910 directions and are bounded by {137} facets, while domes have a multi-facetted shape. By changing the growth rates, we are able to control the size and size homogeneity of freestanding QDs. QDs grown by using low growth rate are characterized by larger sizes and a narrower size distribution. The homogeneity of buried QDs is measured by photoluminescence spectroscopy and can be improved by low temperature overgrowth. The overgrowth induces the formation of nanostructures on the surface. The fabrication of self-assembled nanoholes, which are used as a template to induce short-range positioning of QDs, is also investigated. The growth of closely spaced QDs (QD molecules containing 2–6 QDs per QD molecule is discussed. Finally, the long-range positioning of self-assembled QDs, which can be achieved by the growth on patterned substrates, is demonstrated. Lateral QD replication observed during growth of three-dimensional QD crystals is reported.

  15. Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping.

    Science.gov (United States)

    Sormunen, Jaakko; Riikonen, Juha; Mattila, Marco; Tiilikainen, Jouni; Sopanen, Markku; Lipsanen, Harri

    2005-08-01

    Transformation of self-assembled InAs quantum dots (QDs) on InP(100) into quantum rings (QRs) is studied. In contrast to the typical approach to III--V semiconductor QR growth, the QDs are not capped to form rings. Atomic force micrographs reveal a drastic change from InAs QDs into rings after a growth interruption in tertiarybutylphosphine ambient. Strain energy relief in the InAs QD is discussed and a mechanism for dot-to-ring transformation by As/P exchange reactions is proposed.

  16. Self-assembled colloidal PbS quantum dots on GaAs substrates

    International Nuclear Information System (INIS)

    Lue, Wei; Yamada, Fumihiko; Kamiya, Itaru

    2010-01-01

    We report the fabrication and analysis of self-assembled monolayer and bilayer films of colloidal PbS quantum dots (QDs) on GaAs (001) substrates. 1,6-hexanedithiol is used as link molecule between QDs and GaAs substrates. Atomic force microscopy (AFM) and photoluminescence (PL) measurements confirm the formation of PbS QD film on GaAs. For the monolayer PbS QD film, the temperature-dependent PL shows a feature typical of close-packed film. For the bilayer PbS QD film fabricated from two different mean-sized PbS QDs, we find that the stacking sequence of QDs with different size affects the quantum yield and emission wavelength of the film.

  17. Positioning of self-assembled InAs quantum dots by focused ion beam implantation

    International Nuclear Information System (INIS)

    Mehta, M.

    2007-01-01

    Self-assembled quantum dots (QDs) are envisioned as building blocks for realization of novel nanoelectronic devices, for which the site-selective growth is highly desirable. This thesis presents a successful route toward selective positioning of self-assembled InAs QDs on patterned GaAs surface by combination of in situ focused ion beam (FIB) implantation and molecular beam epitaxy (MBE) technology. First, a buffer layer of GaAs was grown by MBE before a square array of holes with a pitch of 1-2 μm was fabricated by FIB implantation of Ga and In, ions respectively. Later, an in-situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by FIB. The influence of ion dose, annealing parameters and InAs amount was investigated in this work. With optimized parameters, more than 50 % single dot occupancy per hole is achieved. Furthermore, the photoluminescence spectra from positioned QDs confirm their good optical quality. (orig.)

  18. Influence of wetting-layer wave functions on phonon-mediated carrier capture into self-assembled quantum dots

    DEFF Research Database (Denmark)

    Markussen, Troels; Kristensen, Philip Trøst; Tromborg, Bjarne

    2006-01-01

    Models of carrier dynamics in quantum dots rely strongly on adequate descriptions of the carrier wave functions. In this work we numerically solve the one-band effective mass Schrodinger equation to calculate the capture times of phonon-mediated carrier capture into self-assembled quantum dots. C....... Comparing with results obtained using approximate carrier wave functions, we demonstrate that the capture times are strongly influenced by properties of the wetting layer wave functions not accounted for by earlier theoretical analyses....

  19. High-Efficiency Colloidal Quantum Dot Photovoltaics via Robust Self-Assembled Monolayers

    KAUST Repository

    Kim, Gi-Hwan

    2015-11-11

    © 2015 American Chemical Society. The optoelectronic tunability offered by colloidal quantum dots (CQDs) is attractive for photovoltaic applications but demands proper band alignment at electrodes for efficient charge extraction at minimal cost to voltage. With this goal in mind, self-assembled monolayers (SAMs) can be used to modify interface energy levels locally. However, to be effective SAMs must be made robust to treatment using the various solvents and ligands required for to fabricate high quality CQD solids. We report robust self-assembled monolayers (R-SAMs) that enable us to increase the efficiency of CQD photovoltaics. Only by developing a process for secure anchoring of aromatic SAMs, aided by deposition of the SAMs in a water-free deposition environment, were we able to provide an interface modification that was robust against the ensuing chemical treatments needed in the fabrication of CQD solids. The energy alignment at the rectifying interface was tailored by tuning the R-SAM for optimal alignment relative to the CQD quantum-confined electron energy levels. This resulted in a CQD PV record power conversion efficiency (PCE) of 10.7% with enhanced reproducibility relative to controls.

  20. Singlet and triplet polaron relaxation in doubly charged self-assembled quantum dots

    International Nuclear Information System (INIS)

    Grange, T; Zibik, E A; Ferreira, R; Bastard, G; Carpenter, B A; Phillips, P J; Stehr, D; Winnerl, S; Helm, M; Steer, M J; Hopkinson, M; Cockburn, J W; Skolnick, M S; Wilson, L R

    2007-01-01

    Polaron relaxation in self-assembled InAs/GaAs quantum dot samples containing 2 electrons per dot is studied using far-infrared, time-resolved pump-probe measurements for transitions between the s-like ground and p-like first excited conduction band states. Spin-flip transitions between singlet and triplet states are observed experimentally in the decay of the absorption bleaching, which shows a clear biexponential dependence. The initial fast decay (∼30 ps) is associated with the singlet polaron decay, while the decay component with the longer time constant (∼5 ns) corresponds to the excited state triplet lifetime. The results are explained by considering the intrinsic Dresselhaus spin-orbit interaction, which induces spin-flip transitions by acoustic phonon emission or phonon anharmonicity. We have calculated the spin-flip decay times, and good agreement is obtained between the experiment and the simulation of the pump-probe signal. Our results demonstrate the importance of spin-mixing effects for intraband energy relaxation in InAs/GaAs quantum dots

  1. Imaging surface plasmon polaritons using proximal self-assembled InGaAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Bracher, Gregor; Schraml, Konrad; Blauth, Mäx; Wierzbowski, Jakob; López, Nicolás Coca; Bichler, Max; Müller, Kai; Finley, Jonathan J.; Kaniber, Michael, E-mail: Michael.Kaniber@wsi.tum.de [Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany and Nanosystems Initiative Munich, Schellingstraße 4, 80799 München (Germany)

    2014-07-21

    We present optical investigations of hybrid plasmonic nanosystems consisting of lithographically defined plasmonic Au-waveguides or beamsplitters on GaAs substrates coupled to proximal self-assembled InGaAs quantum dots. We designed a sample structure that enabled us to precisely tune the distance between quantum dots and the sample surface during nano-fabrication and demonstrated that non-radiative processes do not play a major role for separations down to ∼10 nm. A polarized laser beam focused on one end of the plasmonic nanostructure generates propagating surface plasmon polaritons that, in turn, create electron-hole pairs in the GaAs substrate during propagation. These free carriers are subsequently captured by the quantum dots ∼25 nm below the surface, giving rise to luminescence. The intensity of the spectrally integrated quantum dot luminescence is used to image the propagating plasmon modes. As the waveguide width reduces from 5 μm to 1 μm, we clearly observe different plasmonic modes at the remote waveguide end, enabling their direct imaging in real space. This imaging technique is applied to a plasmonic beamsplitter facilitating the determination of the splitting ratio between the two beamsplitter output ports as the interaction length L{sub i} is varied. A splitting ratio of 50:50 is observed for L{sub i}∼9±1 μm and 1 μm wide waveguides for excitation energies close to the GaAs band edge. Our experimental findings are in good agreement with mode profile and finite difference time domain simulations for both waveguides and beamsplitters.

  2. Kinetic Monte Carlo simulations of three-dimensional self-assembled quantum dot islands

    International Nuclear Information System (INIS)

    Song Xin; Feng Hao; Liu Yu-Min; Yu Zhong-Yuan; Yin Hao-Zhi

    2014-01-01

    By three-dimensional kinetic Monte Carlo simulations, the effects of the temperature, the flux rate, the total coverage and the interruption time on the distribution and the number of self-assembled InAs/GaAs (001) quantum dot (QD) islands are studied, which shows that a higher temperature, a lower flux rate and a longer growth time correspond to a better island distribution. The relations between the number of islands and the temperature and the flux rate are also successfully simulated. It is observed that for the total coverage lower than 0.5 ML, the number of islands decreases with the temperature increasing and other growth parameters fixed and the number of islands increases with the flux rate increasing when the deposition is lower than 0.6 ML and the other parameters are fixed. (condensed matter: structural, mechanical, and thermal properties)

  3. Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing

    NARCIS (Netherlands)

    Zhan, H.H.; Nötzel, R.; Hamhuis, G.J.; Eijkemans, T.J.; Wolter, J.H.

    2003-01-01

    Self-assembled InAs quantum dots are grown at low temperature (LT) by molecular beam epitaxy (MBE) on GaAs substrates. The growth is in situ monitored by reflection high-energy electron diffraction, and ex situ evaluated by atomic force microscopy for the morphological properties, and by

  4. Plasmon-enhanced terahertz emission in self-assembled quantum dots by femtosecond pulses

    Energy Technology Data Exchange (ETDEWEB)

    Carreño, F., E-mail: ferpo@fis.ucm.es; Antón, M. A., E-mail: antonm@fis.ucm.es; Melle, Sonia, E-mail: smelle@fis.ucm.es; Calderón, Oscar G., E-mail: oscargc@fis.ucm.es; Cabrera-Granado, E., E-mail: ecabrera@fis.ucm.es [Facultad de Óptica y Optometría, Universidad Complutense de Madrid, C/ Arcos de Jalón 118, 28037 Madrid (Spain); Cox, Joel, E-mail: jcox27@uwo.ca; Singh, Mahi R., E-mail: msingh@uwo.ca [Department of Physics and Astronomy, The University of Western Ontario, London N6A 3K7 (Canada); Egatz-Gómez, A., E-mail: Ana.Egatz-Gomez.1@nd.edu [Department of Chemical and Biomolecular Engineering, University of Notre Dame, South Bend, Indiana 46556 (United States)

    2014-02-14

    A scheme for terahertz (THz) generation from intraband transition in a self-assembled quantum dot (QD) molecule coupled to a metallic nanoparticle (MNP) is analyzed. The QD structure is described as a three-level atom-like system using the density matrix formalism. The MNP with spherical geometry is considered in the quasistatic approximation. A femtosecond laser pulse creates a coherent superposition of two subbands in the quantum dots and produces localized surface plasmons in the nanoparticle which act back upon the QD molecule via dipole-dipole interaction. As a result, coherent THz radiation with a frequency corresponding to the interlevel spacing can be obtained, which is strongly modified by the presence of the MNP. The peak value of the terahertz signal is analyzed as a function of nanoparticle's size, the MNP to QD distance, and the area of the applied laser field. In addition, we theoretically demonstrate that the terahertz pulse generation can be effectively controlled by making use of a train of femtosecond laser pulses. We show that by a proper choice of the parameters characterizing the pulse train a huge enhancement of the terahertz signal is obtained.

  5. Anomalous X-ray diffraction from self-assembled PbSe/PbEuTe quantum dots

    International Nuclear Information System (INIS)

    Holy, V.; Schuelli, T.U.; Lechner, R.T.; Springholz, G.; Bauer, G.

    2005-01-01

    Anomalous X-ray scattering from self-assembled PbSe quantum dots embedded in Pb 1-x Eu x Te was used for the study of their structure. The measured reciprocal-space distributions of diffracted intensity were compared with simulations based on kinematical scattering theory and continuum elasticity. From the comparison, the mean chemical composition of the dots and their aspect ratio (height/width) were estimated

  6. Temperature Dependence of Emission Properties of Self-Assembled InGaN Quantum Dots

    International Nuclear Information System (INIS)

    Zhao Wan-Ru; Zhang Jiang-Yong; Zhang Bao-Ping; Weng Guo-En; Liang Ming-Ming; Li Zeng-Cheng; Liu Jian-Ping

    2014-01-01

    Emission properties of self-assembled green-emitting InGaN quantum dots (QDs) grown on sapphire substrates by using metal organic chemical vapor deposition are studied by temperature-dependent photoluminescence (PL) measurements. As temperature increases (15–300 K), the PL peak energy shows an anomalous V-shaped (redshift—blueshift) variation instead of an S-shaped (redshift—blueshift—redshift) variation, as observed typically in green-emitting InGaN/GaN multi-quantum wells (MQWs). The PL full width at half maximum (FWHM) also shows a V-shaped (decrease—increase) variation. The temperature dependence of the PL peak energy and FWHM of QDs are well explained by a model similar to MQWs, in which carriers transferring in localized states play an important role, while the confinement energy of localized states in the QDs is significantly larger than that in MQWs. By analyzing the integrated PL intensity, the larger confinement energy of localized states in the QDs is estimated to be 105.9 meV, which is well explained by taking into account the band-gap shrinkage and carrier thermalization with temperature. It is also found that the nonradiative combination centers in QD samples are much less than those in QW samples with the same In content

  7. The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

    International Nuclear Information System (INIS)

    Shu, G W; Wang, C K; Wang, J S; Shen, J L; Hsiao, R S; Chou, W C; Chen, J F; Lin, T Y; Ko, C H; Lai, C M

    2006-01-01

    The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170 K, and then decreases as the temperature increases further above 170 K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs

  8. Self-assembling complexes of quantum dots and scFv antibodies for cancer cell targeting and imaging.

    Directory of Open Access Journals (Sweden)

    Tatiana A Zdobnova

    Full Text Available Semiconductor quantum dots represent a novel class of fluorophores with unique physical and chemical properties which could enable a remarkable broadening of the current applications of fluorescent imaging and optical diagnostics. Complexes of quantum dots and antibodies are promising visualising agents for fluorescent detection of selective biomarkers overexpressed in tumor tissues. Here we describe the construction of self-assembling fluorescent complexes of quantum dots and anti-HER1 or anti-HER2/neu scFv antibodies and their interactions with cultured tumor cells. A binding strategy based on a very specific non-covalent interaction between two proteins, barnase and barstar, was used to connect quantum dots and the targeting antibodies. Such a strategy allows combining the targeting and visualization functions simply by varying the corresponding modules of the fluorescent complex.

  9. Frequency dependence of the radiative decay rate of excitons in self-assembled quantum dots: Experiment and theory

    DEFF Research Database (Denmark)

    Stobbe, Søren; Johansen, Jeppe; Kristensen, Philip Trøst

    2009-01-01

    We analyze time-resolved spontaneous emission from excitons confined in self-assembled InAs quantum dots placed at various distances to a semiconductor-air interface. The modification of the local density of optical states due to the proximity of the interface enables unambiguous determination...... furthermore discuss three models of quantum dot strain and compare the measured wave-function overlap to these models. The observed frequency dependence of the wave-function overlap can be understood qualitatively in terms of the different compressibility of electrons and holes originating from...

  10. Single-dot Spectroscopy of GaAs Quantum Dots Fabricated by Filling of Self-assembled Nanoholes

    Directory of Open Access Journals (Sweden)

    Heyn Ch

    2010-01-01

    Full Text Available Abstract We study the optical emission of single GaAs quantum dots (QDs. The QDs are fabricated by filling of nanoholes in AlGaAs and AlAs which are generated in a self-assembled fashion by local droplet etching with Al droplets. Using suitable process parameters, we create either uniform QDs in partially filled deep holes or QDs with very broad size distribution in completely filled shallow holes. Micro photoluminescence measurements of single QDs of both types establish sharp excitonic peaks. We measure a fine-structure splitting in the range of 22–40μeV and no dependence on QD size. Furthermore, we find a decrease in exciton–biexciton splitting with increasing QD size.

  11. Unique self-assembly properties of a bridge-shaped protein dimer with quantum dots

    International Nuclear Information System (INIS)

    Wang, Jianhao; Jiang, Pengju; Gao, Liqian; Yu, Yongsheng; Lu, Yao; Qiu, Lin; Wang, Cheli; Xia, Jiang

    2013-01-01

    How protein–protein interaction affects protein–nanoparticle self-assembly is the key to the understanding of biomolecular coating of nanoparticle in biological fluids. However, the relationship between protein shape and its interaction with nanoparticles is still under-exploited because of lack of a well-conceived binding system and a method to detect the subtle change in the protein–nanoparticle assemblies. Noticing this unresolved need, we cloned and expressed a His-tagged SpeA protein that adopts a bridge-shaped dimer structure, and utilized a high-resolution capillary electrophoresis method to monitor assembly formation between the protein and quantum dots (QDs, 5 nm in diameter). We observed that the bridge-shaped structure rendered a low SpeA:QD stoichiometry at saturation. Also, close monitoring of imidazole (Im) displacement of surface-bound protein revealed a unique two-step process. High-concentration Im could displace surface-bound SpeA protein and form a transient QD–protein intermediate, through a kinetically controlled displacement process. An affinity-driven equilibrium step then followed, resulting in re-assembling of the QD–protein complex in about 1 h. Through a temporarily formed intermediate, Im causes a rearrangement of His-tagged proteins on the surface. Thus, our work showcases that the synergistic interplay between QD–His-tag interaction and protein–protein interaction can result in unique properties of protein–nanoparticle assembly for the first time

  12. Unique self-assembly properties of a bridge-shaped protein dimer with quantum dots

    Science.gov (United States)

    Wang, Jianhao; Jiang, Pengju; Gao, Liqian; Yu, Yongsheng; Lu, Yao; Qiu, Lin; Wang, Cheli; Xia, Jiang

    2013-09-01

    How protein-protein interaction affects protein-nanoparticle self-assembly is the key to the understanding of biomolecular coating of nanoparticle in biological fluids. However, the relationship between protein shape and its interaction with nanoparticles is still under-exploited because of lack of a well-conceived binding system and a method to detect the subtle change in the protein-nanoparticle assemblies. Noticing this unresolved need, we cloned and expressed a His-tagged SpeA protein that adopts a bridge-shaped dimer structure, and utilized a high-resolution capillary electrophoresis method to monitor assembly formation between the protein and quantum dots (QDs, 5 nm in diameter). We observed that the bridge-shaped structure rendered a low SpeA:QD stoichiometry at saturation. Also, close monitoring of imidazole (Im) displacement of surface-bound protein revealed a unique two-step process. High-concentration Im could displace surface-bound SpeA protein and form a transient QD-protein intermediate, through a kinetically controlled displacement process. An affinity-driven equilibrium step then followed, resulting in re-assembling of the QD-protein complex in about 1 h. Through a temporarily formed intermediate, Im causes a rearrangement of His-tagged proteins on the surface. Thus, our work showcases that the synergistic interplay between QD-His-tag interaction and protein-protein interaction can result in unique properties of protein-nanoparticle assembly for the first time.

  13. Temperature dependent empirical pseudopotential theory for self-assembled quantum dots.

    Science.gov (United States)

    Wang, Jianping; Gong, Ming; Guo, Guang-Can; He, Lixin

    2012-11-28

    We develop a temperature dependent empirical pseudopotential theory to study the electronic and optical properties of self-assembled quantum dots (QDs) at finite temperature. The theory takes the effects of both lattice expansion and lattice vibration into account. We apply the theory to InAs/GaAs QDs. For the unstrained InAs/GaAs heterostructure, the conduction band offset increases whereas the valence band offset decreases with increasing temperature, and there is a type-I to type-II transition at approximately 135 K. Yet, for InAs/GaAs QDs, the holes are still localized in the QDs even at room temperature, because the large lattice mismatch between InAs and GaAs greatly enhances the valence band offset. The single-particle energy levels in the QDs show a strong temperature dependence due to the change of confinement potentials. Because of the changes of the band offsets, the electron wavefunctions confined in QDs increase by about 1-5%, whereas the hole wavefunctions decrease by about 30-40% when the temperature increases from 0 to 300 K. The calculated recombination energies of excitons, biexcitons and charged excitons show red shifts with increasing temperature which are in excellent agreement with available experimental data.

  14. 2D optical photon echo spectroscopy of a self-assembled quantum dot

    International Nuclear Information System (INIS)

    Fingerhut, Benjamin P.; Mukamel, Shaul; Richter, Marten; Luo, Jun-Wei; Zunger, Alex

    2013-01-01

    Simulations of two dimensional coherent photon echo (2D-PE) spectra of self-assembled InAs/GaAs quantum dots (QD) in different charged states are presented revealing the coupling between the individual mono-exciton X q transitions and contributions of bi-excitons XX q . The information about the XX q states is crucial for various application scenarios of QDs, like e.g. highly efficient solar cells. The simulations rely on a microscopic description of the electronic structure by high-level atomistic many-body pseudopotential calculations. It is shown that asymmetric diagonal peak shapes and double cross-peaks are the result of XX q state contributions to the PE signal by analyzing the contributions of the individual pathways excited state emission, ground state bleach and excited state absorption. The results show that from the detuned X q and XX q contributions the bi-exciton binding energies of the XX q manifold are revealed in 2D-PE signals. (copyright 2012 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Templated self-assembly of quantum dots from aqueous solution using protein scaffolds

    Energy Technology Data Exchange (ETDEWEB)

    Blum, Amy Szuchmacher [Center for Bio/Molecular Science and Engineering, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375 (United States); Soto, Carissa M [Center for Bio/Molecular Science and Engineering, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375 (United States); Wilson, Charmaine D [Geo-Centers, Incorporated, Newton, MA 02459 (United States); Whitley, Jessica L [Geo-Centers, Incorporated, Newton, MA 02459 (United States); Moore, Martin H [Center for Bio/Molecular Science and Engineering, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375 (United States); Sapsford, Kim E [George Mason University, 10910 University Boulevard, Manassas, VA 20110 (United States); Lin, Tianwei [Department of Molecular Biology, The Scripps Research Institute, 10550 North Torrey Pines Road, La Jolla, CA 92037 (United States); Chatterji, Anju [Department of Molecular Biology, The Scripps Research Institute, 10550 North Torrey Pines Road, La Jolla, CA 92037 (United States); Johnson, John E [Department of Molecular Biology, The Scripps Research Institute, 10550 North Torrey Pines Road, La Jolla, CA 92037 (United States); Ratna, Banahalli R [Center for Bio/Molecular Science and Engineering, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375 (United States)

    2006-10-28

    Short, histidine-containing peptides can be conjugated to lysine-containing protein scaffolds to controllably attach quantum dots (QDs) to the scaffold, allowing for generic attachment of quantum dots to any protein without the use of specially engineered domains. This technique was used to bind quantum dots from aqueous solution to both chicken IgG and cowpea mosaic virus (CPMV), a 30 nm viral particle. These quantum dot-protein assemblies were studied in detail. The IgG-QD complexes were shown to retain binding specificity to their antigen after modification. The CPMV-QD complexes have a local concentration of quantum dots greater than 3000 nmol ml{sup -1}, and show a 15% increase in fluorescence quantum yield over free quantum dots in solution.

  16. Kinetic Monte Carlo simulations and cross-sectional scanning tunneling microscopy as tools to investigate the heteroepitaxial capping of self-assembled quantum dots

    NARCIS (Netherlands)

    Keizer, J.G.; Koenraad, P.M.; Smereka, P.; Ulloa, J.M.; Guzman, A.; Hierro, A.

    2012-01-01

    In the last decade, an ever increasing understanding of heteroepitaxial growth has paved the way for the fabrication of a multitude of self-assembled nanostructures. Nowadays, nanostructures such as quantum rings,1 quantum wires,2 quantum dashes,3 quantum rods,4 and quantum dots (QDs)5 can be grown

  17. Towards Scalable Entangled Photon Sources with Self-Assembled InAs /GaAs Quantum Dots

    Science.gov (United States)

    Wang, Jianping; Gong, Ming; Guo, G.-C.; He, Lixin

    2015-08-01

    The biexciton cascade process in self-assembled quantum dots (QDs) provides an ideal system for realizing deterministic entangled photon-pair sources, which are essential to quantum information science. The entangled photon pairs have recently been generated in experiments after eliminating the fine-structure splitting (FSS) of excitons using a number of different methods. Thus far, however, QD-based sources of entangled photons have not been scalable because the wavelengths of QDs differ from dot to dot. Here, we propose a wavelength-tunable entangled photon emitter mounted on a three-dimensional stressor, in which the FSS and exciton energy can be tuned independently, thereby enabling photon entanglement between dissimilar QDs. We confirm these results via atomistic pseudopotential calculations. This provides a first step towards future realization of scalable entangled photon generators for quantum information applications.

  18. Self-assembled InAs quantum dots. Properties, modification and emission processes

    International Nuclear Information System (INIS)

    Schramm, A.

    2007-01-01

    In this thesis, structural, optical as well as electronic properties of self-assembled InAs quantum dots (QD) were studied by means of atomic force microscopy (AFM), photoluminescence (PL), capacitance spectroscopy (CV) and capacitance transient spectroscopy (DLTS). The quantum dots were grown with molecular beam epitaxy (MBE) and embedded in Schottky diodes for electrical characterization. In this work growth aspects as well as the electronic structures of QD were discussed. By varying the QD growth parameters it is possible to control the structural, and thus the optical and electronic properties of QD. Two methods are presented. Adjusting the QD growth temperature leads either to small QD with a high areal density or to high QDs with a low density. The structural changes of the QD are reflected in the changes of the optical and electronic properties. The second method is to introduce a growth interruption after capping the QD with thin cap layers. It was shown that capping with AlAs leads to a well-developed alternative to control the QD height and thus the ground-state energies of the QD. A post-growth method modifying the QD properties ist rapid thermal annealing (RTA). Raising the RTA temperature causes a lifting of the QD energy states with respect to the GaAs band edge energy due to In/Ga intermixing processes. A further main part of this work covers the emission processes of charge carriers in QD. Thermal emission, thermally assisted tunneling, and pure tunneling emission are studied by capacitance transient spectroscopy techniques. In DLTS experiments a strong impact of the electric field on the activation energies of electrons was found interfering the correct determination of the QD level energies. This behaviour can be explained by a thermally assisted tunneling model. A modified model taking the Coulomb interaction of occupied QD into account describes the emission rates of the electrons. In order to avoid several emission pathes in the experiments

  19. The spectral analysis and threshold limits of quasi-supercontinuum self-assembled quantum dot interband lasers

    KAUST Repository

    Tan, Cheeloon

    2009-09-01

    This paper presents a theoretical model to explain the quasi-supercontinuum interband emission from InGaAs/GaAs self-assembled semiconductor quantum dot lasers by accounting for both inhomogeneous and homogeneous optical gain broadening. The experimental and theoretical agreement of a room temperature (293 K) broadband laser emission confirms the presence of multiple-state lasing actions in highly inhomogeneous dot ensembles. The corresponding full-width half-maximum of the photoluminescence is 76 meV as opposed to those wideband lasing coverage at only low temperature (∼60 K) from typical quantum dot lasers. A newly proposed change of homogeneous broadening with injection that occurs only in highly inhomogeneous quantum dot system is critical to account for the continuous wideband lasing but not the conventional ideas of carrier dynamics in semiconductor lasers. In addition, the analysis of threshold conditions reveals that broadband lasing only occurs when the energy spacing between quantized energy states is comparable to the inhomogeneous broadening of quantum-dot nanostructures. The study is important in providing a picture of this novel device and realization of broad lasing coverage for diverse applications, especially in the research field of short-pulse generation and ultra-fast phenomena in semiconductor quantum-dot laser. © 2009 IEEE.

  20. Self-Assembled BN and BCN Quantum Dots Obtained from High Intensity Ultrasound Exfoliated Nanosheets

    Czech Academy of Sciences Publication Activity Database

    Štengl, Václav; Henych, Jiří; Kormunda, M.

    2014-01-01

    Roč. 6, č. 6 (2014), s. 1106-1116 ISSN 1947-2935 Institutional support: RVO:61388980 Keywords : Ultrasound * Exfoliation * BN * BCN * Quantum Dots Subject RIV: CA - Inorganic Chemistry Impact factor: 2.598, year: 2014

  1. Cathodoluminescence imaging and spectroscopy of excited states in InAs self-assembled quantum dots

    International Nuclear Information System (INIS)

    Khatsevich, S.; Rich, D.H.; Kim, Eui-Tae; Madhukar, A.

    2005-01-01

    We have examined state filling and thermal activation of carriers in buried InAs self-assembled quantum dots (SAQDs) with excitation-dependent cathodoluminescence (CL) imaging and spectroscopy. The InAs SAQDs were formed during molecular-beam epitaxial growth of InAs on undoped planar GaAs (001). The intensities of the ground- and excited-state transitions were analyzed as a function of temperature and excitation density to study the thermal activation and reemission of carriers. The thermal activation energies associated with the thermal quenching of the luminescence were measured for ground- and excited-state transitions of the SAQDs, as a function of excitation density. By comparing these activation energies with the ground- and excited-state transition energies, we have considered various processes that describe the reemission of carriers. Thermal quenching of the intensity of the QD ground- and first excited-state transitions at low excitations in the ∼230-300-K temperature range is attributed to dissociation of excitons from the QD states into the InAs wetting layer. At high excitations, much lower activation energies of the ground and excited states are obtained, suggesting that thermal reemission of single holes from QD states into the GaAs matrix is responsible for the observed temperature dependence of the QD luminescence in the ∼230-300-K temperature range. The dependence of the CL intensity of the ground-and first excited-state transition on excitation density was shown to be linear at all temperatures at low-excitation density. This result can be understood by considering that carriers escape and are recaptured as excitons or correlated electron-hole pairs. At sufficiently high excitations, state-filling and spatial smearing effects are observed together with a sublinear dependence of the CL intensity on excitation. Successive filling of the ground and excited states in adjacent groups of QDs that possess different size distributions is assumed to

  2. Changes of photoluminescence of electron beam irradiated self-assembled InAs/GaAs quantum dots

    Science.gov (United States)

    Maliya; Aierken, Abuduwayiti; Li, Yudong; Zhou, Dong; Zhao, Xiaofan; Guo, Qi; Liu, Chaoming

    2018-03-01

    We investigate the effects of 1.0MeV electron beam irradiation on the photoluminescence of self-assembled InAs/GaAs quantum dots. After irradiation doses up to 1×1016e-/cm2 , photoluminescence of all samples was degraded dramatically and some additional radiation-induced changes in photo-carrier recombination from QDs, which include a slight increase in PL emission with low electron doses under different photo-injection condition in two samples, are also noticed. Different energy shift was observed in two samples with different Quantum Dot sizes. We attribute this remarkable phenomenon to combination of stress relaxation induced red-shift and In-Ga intermixing caused blue-shift.

  3. Enhanced carrier collection efficiency and reduced quantum state absorption by electron doping in self-assembled quantum dot solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Li, Tian, E-mail: tianlee@umd.edu, E-mail: dage@ece.umd.edu; Dagenais, Mario, E-mail: tianlee@umd.edu, E-mail: dage@ece.umd.edu [Department of Electrical Engineering, University of Maryland, College Park, Maryland 20742 (United States); Lu, Haofeng; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia)

    2015-02-02

    Reduced quantum dot (QD) absorption due to state filling effects and enhanced electron transport in doped QDs are demonstrated to play a key role in solar energy conversion. Reduced QD state absorption with increased n-doping is observed in the self-assembled In{sub 0.5}Ga{sub 0.5}As/GaAs QDs from high resolution below-bandgap external quantum efficiency (EQE) measurement, which is a direct consequence of the Pauli exclusion principle. We also show that besides partial filling of the quantum states, electron-doping produces negatively charged QDs that exert a repulsive Coulomb force on the mobile electrons, thus altering the electron trajectory and reducing the probability of electron capture, leading to an improved collection efficiency of photo-generated carriers, as indicated by an absolute above-bandgap EQE measurement. The resulting redistribution of the mobile electron in the planar direction is further validated by the observed photoluminescence intensity dependence on doping.

  4. Understanding the self-assembly of proteins onto gold nanoparticles and quantum dots driven by metal-histidine coordination.

    Science.gov (United States)

    Aldeek, Fadi; Safi, Malak; Zhan, Naiqian; Palui, Goutam; Mattoussi, Hedi

    2013-11-26

    Coupling of polyhistidine-appended biomolecules to inorganic nanocrystals driven by metal-affinity interactions is a greatly promising strategy to form hybrid bioconjugates. It is simple to implement and can take advantage of the fact that polyhistidine-appended proteins and peptides are routinely prepared using well established molecular engineering techniques. A few groups have shown its effectiveness for coupling proteins onto Zn- or Cd-rich semiconductor quantum dots (QDs). Expanding this conjugation scheme to other metal-rich nanoparticles (NPs) such as AuNPs would be of great interest to researchers actively seeking effective means for interfacing nanostructured materials with biology. In this report, we investigated the metal-affinity driven self-assembly between AuNPs and two engineered proteins, a His7-appended maltose binding protein (MBP-His) and a fluorescent His6-terminated mCherry protein. In particular, we investigated the influence of the capping ligand affinity to the nanoparticle surface, its density, and its lateral extension on the AuNP-protein self-assembly. Affinity gel chromatography was used to test the AuNP-MPB-His7 self-assembly, while NP-to-mCherry-His6 binding was evaluated using fluorescence measurements. We also assessed the kinetics of the self-assembly between AuNPs and proteins in solution, using time-dependent changes in the energy transfer quenching of mCherry fluorescent proteins as they immobilize onto the AuNP surface. This allowed determination of the dissociation rate constant, Kd(-1) ∼ 1-5 nM. Furthermore, a close comparison of the protein self-assembly onto AuNPs or QDs provided additional insights into which parameters control the interactions between imidazoles and metal ions in these systems.

  5. Self-assembly of Ge quantum dots on periodically corrugated Si surfaces

    International Nuclear Information System (INIS)

    Buljan, M.; Jerčinović, M.; Radić, N.; Facsko, S.; Baehtz, C.; Muecklich, A.; Grenzer, J.; Delač Marion, I.; Mikšić Trontl, V.; Kralj, M.; Holý, V.

    2015-01-01

    The fabrication of regularly ordered Ge quantum dot arrays on Si surfaces usually requires extensive preparation processing, ensuring clean and atomically ordered substrates, while the ordering parameters are quite limited by the surface properties of the substrate. Here, we demonstrate a simple method for fabrication of ordered Ge quantum dots with highly tunable ordering parameters on rippled Si surfaces. The ordering is achieved by magnetron sputter deposition, followed by an annealing in high vacuum. We show that the type of ordering and lattice vector parameters of the formed Ge quantum dot lattice are determined by the crystallographic properties of the ripples, i.e., by their shape and orientation. Moreover, the ordering is achieved regardless the initial amorphisation of the ripples surface and the presence of a thin oxide layer

  6. Electric-Field-Induced Energy Tuning of On-Demand Entangled-Photon Emission from Self-Assembled Quantum Dots.

    Science.gov (United States)

    Zhang, Jiaxiang; Zallo, Eugenio; Höfer, Bianca; Chen, Yan; Keil, Robert; Zopf, Michael; Böttner, Stefan; Ding, Fei; Schmidt, Oliver G

    2017-01-11

    We explore a method to achieve electrical control over the energy of on-demand entangled-photon emission from self-assembled quantum dots (QDs). The device used in our work consists of an electrically tunable diode-like membrane integrated onto a piezoactuator, which is capable of exerting a uniaxial stress on QDs. We theoretically reveal that, through application of the quantum-confined Stark effect to QDs by a vertical electric field, the critical uniaxial stress used to eliminate the fine structure splitting of QDs can be linearly tuned. This feature allows experimental realization of a triggered source of energy-tunable entangled-photon emission. Our demonstration represents an important step toward realization of a solid-state quantum repeater using indistinguishable entangled photons in Bell state measurements.

  7. Wave function analysis of type-II self-assembled quantum dot structures using magneto-optics

    International Nuclear Information System (INIS)

    Godoy, Marcio Peron Franco de; Nakaema, Marcelo K.K.; Gomes, Paulo F.; Iikawa, Fernando; Brasil, Maria Jose S.P.; Bortoleto, Jose Roberto R.; Cotta, Monica A.; Ribeiro, Evaldo; Medeiros-Ribeiro, Gilberto; Marques, Gilmar E.; Bittencourt, A.C.R.

    2004-01-01

    Full text: Recently, self-assembled quantum dots have attracted considerable attention for their potential for device applications. Type II interface, in particular, present interesting properties due to the space separation of the carriers. One of the carriers is confined at the lower band gap layer and the other remains at the barrier layers and is only localized by the Coulomb attraction. An essential information for using type II quantum wells and quantum dots on technological applications is the localization of the carrier wave function, which is an experimentally difficult parameter to be measured. Some techniques have been proposed to map the wave functions in quantum dots such as magneto-tunneling spectroscopy and near- field scanning optical microscopy. These techniques involve however a very complex experimental apparatus and sample processing. The magneto-exciton transition can be used as an alternative tool to investigate the exciton wave function distribution, since this distribution has a strong influence on the diamagnetic shift and Zeeman splitting. In this work, we present magneto-optical studies of In P/GaAs type II self-assembled quantum dots, where the electron is strongly confined at the In P, while the hole is weakly localized at the GaAs barrier due to the Coulombic attraction from the electrons. This scenery is very distinct from type I systems. The weaker hole confinement should alter the valence band mixing resulting in a different valence band contribution on the Zeeman splitting as compared to type I systems. Based on the results of the magneto-exciton emission from the wetting layer and from the individual dots, we obtained interesting results concerning the wave function distribution in our system. We discuss the localization of the hole wave function along the growth direction based on the measured Zeeman splitting and the in-plane wave function distribution, based on the observed diamagnetic shift. A remarkable result is that the

  8. Self-assembly and photoluminescence evolution of hydrophilic and hydrophobic quantum dots in sol–gel processes

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Ping, E-mail: mse_yangp@ujn.edu.cn [School of Material Science and Engineering, University of Jinan, Jinan 250022 (China); Matras-Postolek, Katarzyna [Faculty of Chemical Engineering and Technology, Cracow University of Technology, Krakow 31-155 (Poland); Song, Xueling; Zheng, Yan; Liu, Yumeng; Ding, Kun; Nie, Shijie [School of Material Science and Engineering, University of Jinan, Jinan 250022 (China)

    2015-10-15

    Graphical abstract: Highly luminescent quantum dots (QDs) with tunable photoluminescence (PL) wavelength were assembled into various morphologies including chain, hollow spheres, fibers, and ring structures through sol–gel processes. The PL properties during assembly as investigated. - Highlights: • Highly luminescent quantum dots (QDs) were synthesized from several ligands. • The evolution of PL in self-assembly via sol–gel processes was investigated. • CdTe QDs were assembled into a chain by controlling hydrolysis and condensation reactions. • Hollow spheres, fibers, and ring structures were created via CdSe/ZnS QDs in sol–gel processes. - Abstract: Highly luminescent quantum dots (QDs) with tunable photoluminescence (PL) wavelength were synthesized from several ligands to investigate the PL evolution in QD self-assembly via sol–gel processes. After ligand exchange, CdTe QDs were assembled into a chain by controlling the hydrolysis and condensation reaction of 3-mercaptopropyl-trimethoxysilane. The chain was then coated with a SiO{sub 2} shell from tetraethyl orthosilicate (TEOS). Hollow spheres, fibers, and ring structures were created from CdSe/ZnS QDs via various sol–gel processes. CdTe QDs revealed red-shifted and narrowed PL spectrum after assembly compared with their initial one. In contrast, the red-shift of PL spectra of CdSe/ZnS QDs is small. By optimizing experimental conditions, SiO{sub 2} spheres with multiple CdSe/ZnS QDs were fabricated using TEOS and MPS. The QDs in these SiO{sub 2} spheres retained their initial PL properties. This result is useful for application because of their high stability and high PL efficiency of 33%.

  9. Renormalization of effective mass in self-assembled quantum dots due to electron-electron interactions

    International Nuclear Information System (INIS)

    Babinski, A; Korkusinski, M; Hawrylak, P; Wasilewski, Z R; Potemski, M

    2013-01-01

    Magnetic-field dispersion of the multiexcitons related to the p shell of a single quantum dot (QD) is analysed in this work. The reduced cyclotron effective mass of carriers is determined from the energy splitting between the p + - and p − - related multiexcitonic emission lines. The reduced mass in the occupied QD was found to be larger than the mass related to the QD's single particle structure. The apparent increase of the reduced mass with increasing excitonic occupation of the dot is related to the mass renoralization due to electron-electron interactions within a multiexcitonic droplet

  10. High-performance ambipolar self-assembled Au/Ag nanowire based vertical quantum dot field effect transistor.

    Science.gov (United States)

    Song, Xiaoxian; Zhang, Yating; Zhang, Haiting; Yu, Yu; Cao, Mingxuan; Che, Yongli; Wang, Jianlong; Dai, Haitao; Yang, Junbo; Ding, Xin; Yao, Jianquan

    2016-10-07

    Most lateral PbSe quantum dot field effect transistors (QD FETs) show a low on current/off current (I on/I off) ratio in charge transport measurements. A new strategy to provide generally better performance is to design PbSe QD FETs with vertical architecture, in which the structure parameters can be tuned flexibly. Here, we fabricated a novel room-temperature operated vertical quantum dot field effect transistor with a channel of 580 nm, where self-assembled Au/Ag nanowires served as source transparent electrodes and PbSe quantum dots as active channels. Through investigating the electrical characterization, the ambipolar device exhibited excellent characteristics with a high I on/I off current ratio of about 1 × 10(5) and a low sub-threshold slope (0.26 V/decade) in the p-type regime. The all-solution processing vertical architecture provides a convenient way for low cost, large-area integration of the device.

  11. EXPERIMENTAL STUDY OF 3D SELF-ASSEMBLED PHOTONIC CRYSTALS AND COLLOIDAL CORE-SHELL SEMICONDUCTOR QUANTUM DOTS

    Directory of Open Access Journals (Sweden)

    Pham Thu Nga

    2017-11-01

    Full Text Available In this contribution we present an experimental study of 3D opal photonic crystals. The samples are opals constituted by colloidal silica spheres, realized with self-assembly technique. The sphere diameter is selected in order to obtain coupling of the photonic band gap with the emission from CdSe/ZnS colloidal quantum dots. The quantum dots infiltrated in the opals is expected to be enhanced or suppressed depending on the detection angle from the photonic crystal. The structural and optical characterization of the SiO2 opal photonic crystals are performed by field-emission scanning electron microscopy and reflectivity spectroscopy. Measurements performed on samples permits to put into evidence the influence of the different preparation methods on the optical properties. Study of self-activated luminescence of the pure opals is also presented. It is shown that the luminescence of the sample with QDs have original QD emission and not due to the photonic crystal structure. The optical properties of colloidal core-shell semiconductor quantum dots of CdSe/ZnS which are prepared in our lab will be mention.

  12. Effects of Self-Assembled Monolayers on Solid-State CdS Quantum Dot Sensitized Solar Cells

    KAUST Repository

    Ardalan, Pendar; Brennan, Thomas P.; Lee, Han-Bo-Ram; Bakke, Jonathan R.; Ding, I-Kang; McGehee, Michael D.; Bent, Stacey F.

    2011-01-01

    Quantum dot sensitized solar cells (QDSSCs) are of interest for solar energy conversion because of their tunable band gap and promise of stable, low-cost performance. We have investigated the effects of self-assembled monolayers (SAMs) with phosphonic acid headgroups on the bonding and performance of cadmium sulfide (CdS) solid-state QDSSCs. CdS quantum dots ∼2 to ∼6 nm in diameter were grown on SAM-passivated planar or nanostructured TiO 2 surfaces by successive ionic layer adsorption and reaction (SILAR), and photovoltaic devices were fabricated with spiro-OMeTAD as the solid-state hole conductor. X-ray photoelectron spectroscopy, Auger electron spectroscopy, ultraviolet-visible spectroscopy, scanning electron microscopy, transmission electron microscopy, water contact angle measurements, ellipsometry, and electrical measurements were employed to characterize the materials and the resulting device performance. The data indicate that the nature of the SAM tailgroup does not significantly affect the uptake of CdS quantum dots on TiO2 nor their optical properties, but the presence of the SAM does have a significant effect on the photovoltaic device performance. Interestingly, we observe up to ∼3 times higher power conversion efficiencies in devices with a SAM compared to those without the SAM. © 2011 American Chemical Society.

  13. Effects of Self-Assembled Monolayers on Solid-State CdS Quantum Dot Sensitized Solar Cells

    KAUST Repository

    Ardalan, Pendar

    2011-02-22

    Quantum dot sensitized solar cells (QDSSCs) are of interest for solar energy conversion because of their tunable band gap and promise of stable, low-cost performance. We have investigated the effects of self-assembled monolayers (SAMs) with phosphonic acid headgroups on the bonding and performance of cadmium sulfide (CdS) solid-state QDSSCs. CdS quantum dots ∼2 to ∼6 nm in diameter were grown on SAM-passivated planar or nanostructured TiO 2 surfaces by successive ionic layer adsorption and reaction (SILAR), and photovoltaic devices were fabricated with spiro-OMeTAD as the solid-state hole conductor. X-ray photoelectron spectroscopy, Auger electron spectroscopy, ultraviolet-visible spectroscopy, scanning electron microscopy, transmission electron microscopy, water contact angle measurements, ellipsometry, and electrical measurements were employed to characterize the materials and the resulting device performance. The data indicate that the nature of the SAM tailgroup does not significantly affect the uptake of CdS quantum dots on TiO2 nor their optical properties, but the presence of the SAM does have a significant effect on the photovoltaic device performance. Interestingly, we observe up to ∼3 times higher power conversion efficiencies in devices with a SAM compared to those without the SAM. © 2011 American Chemical Society.

  14. Graphene Oxide Quantum Dots Exfoliated From Carbon Fibers by Microwave Irradiation: Two Photoluminescence Centers and Self-Assembly Behavior.

    Science.gov (United States)

    Yuan, Jian-Min; Zhao, Rui; Wu, Zhen-Jun; Li, Wei; Yang, Xin-Guo

    2018-04-17

    Graphene oxide quantum dots (GOQDs) attract great attention for their unique properties and promising application potential. The difficulty in the formation of a confined structure, and the numerous and diverse oxygen-containing functional groups results in a low emission yield to GOQDs. Here, GOQDs with a size of about 5 nm, exfoliated from carbon fibers by microwave irradiation, are detected and analyzed. The exfoliated GOQDs are deeply oxidized and induce large numbers of epoxy groups and ether bonds, but only a small amount of carbonyl groups and hydroxyl groups. The subdomains of sp 2 clusters, involving epoxy groups and ether bonds, are responsible for the two strong photoluminescence emissions of GOQDs under different excitation wavelengths. Moreover, GOQDs tend to self-assemble at the edges of their planes to form self-assembly films (SAFs) with the evaporation of water. SAFs can further assemble into different 3D patterns with unique microstructures such as sponge bulk, sponge ball, microsheet, sisal, and schistose coral, which are what applications such as supercapacitors, cells, catalysts, and electrochemical sensors need. This method for preparation of GOQDs is easy, quick, and environmentally friendly, and this work may open up new research interests about GOQDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Spectroscopy of size dependent many-particle effects in single self-assembled semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Dal Savio, C.

    2006-02-20

    Single InAs quantum dots (QDs) grown with the Stranski-Krastanov method in a In{sub 0.12}Ga{sub 0.88}As quantum well embedded in GaAs and emitting in the near infrared have been optically investigated. To perform QD spectroscopy at low temperatures a very stable micro-photoluminescence ({mu}-PL) microscope set-up fully integrated in a liquid helium (LHe) cryostate has been successfully developed. The system is based on the cold finger technique and a Fourier Transform (FT) spectrometer combined with a nitrogen cooled Ge detector. Photoluminescence of the QDs was excited non resonantly with a He-Ne laser and single dot spectroscopy was carried out at temperatures below 60 K. The experimental set-up allows mapping of the optical emission by recording spectra for every point of a scan grid. This mapping mode is used to acquire optical images and to locate a particular dot for investigation. Series of measurement on a single QD were normally performed over a long time (from a few days to a week), with the need of daily adjustment in the sub-micrometer range. At low excitation power a single sharp line (E{sub x}) arising from recombination of a single exciton in the dot is observed. Varying the excitation density the spectra become more complex, with appearance of the biexciton emission line (E{sub xx}) on the lower energies side of the E{sub x} line, followed by emission from excitons occupying higher shells in the dot. Measured biexciton binding energies and power dependence are in good agreement with values reported in the literature. The temperature dependence of the optical emission was investigated. The energy shows the characteristic decrease related to the shrinking of the semiconductor band gap, while the linewidth evolution is compatible with broadening due to coupling with acoustic and optical phonons. A statistics of biexciton binding energies over a dozen of dots was acquired and the results compared with single QD spectroscopy data available in the

  16. Materials challenges for devices based on single, self-assembled InGaN quantum dots

    International Nuclear Information System (INIS)

    Oliver, Rachel A; Jarjour, Anas F; Tahraoui, Abbes; Kappers, Menno J; Taylor, Robert A; Humphreys, Colin J

    2007-01-01

    Builiding on earlier studies of single InGaN quantum dots (QDs), we are considering their potential for use in blue- and green-emitting single photon sources. Envisaging a device based on a resonant cavity light emitting diode, we have studied the effect of growing QDs on an underlying AlN/GaN distributed Bragg reflector, and have shown that enhanced single QD emission may be obtained. Additionally, we have studied the effect of the growth and activation of a p-type cap on an underlying QD layer and have shown that the QDs survive the anneal process

  17. Phosphonate self-assembled monolayers as organic linkers in solid-state quantum dot sensetized solar cells

    KAUST Repository

    Ardalan, Pendar

    2010-06-01

    We have employed X-ray photoelectron spectroscopy (XPS), ultraviolet-visible (UV-vis) spectroscopy, infrared (IR) spectroscopy, water contact angle (WCA) measurements, ellipsometry, and electrical measurements to study the effects of self-assembled monolayers (SAMs) with phosphonic acid headgroups on the bonding and performance of cadmium sulfide (CdS) solid-state quantum dot sensitized solar cells (QDSSCs). ∼2 to ∼6 nm size CdS quantum dots (QDs) were grown on the SAM-passivated TiO2 surfaces by successive ionic layer adsorption and reaction (SILAR). Our results show differences in the bonding of the CdS QDs at the TiO2 surfaces with a SAM linker. Moreover, our data indicate that presence of a SAM increases the CdS uptake on TiO2 as well as the performance of the resulting devices. Importantly, we observe ∼2 times higher power conversion efficiencies in the devices with a SAM compared to those that lack a SAM. © 2010 IEEE.

  18. Self-assembly of InAs and Si/Ge quantum dots on structured surfaces

    International Nuclear Information System (INIS)

    Patella, F; Sgarlata, A; Arciprete, F; Nufris, S; Szkutnik, P D; Placidi, E; Fanfoni, M; Motta, N; Balzarotti, A

    2004-01-01

    We discuss the self-aggregation process of InAs and Si-Ge quantum dots (QDs) on natural and patterned GaAs(001) and Si(001) and Si(111) surfaces, with reference to our recent studies with scanning tunnelling and atomic force microscopy and current experimental and theoretical works. Various methods for obtaining naturally structured surfaces are briefly surveyed, as the patterning formed by the surface instability and by the strain in mismatched heteroepitaxy, and the latest methods of pre-patterning and growth at selected sites are discussed. Basic topics are also addressed that determine the final morphology of QDs, such as the wetting layer formation, the elastic strain field and the two-dimensional to three-dimensional phase transition

  19. Critical strain region evaluation of self-assembled semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Sales, D L [Departamento de Ciencia de los Materiales e I. M. y Q. I., Universidad de Cadiz, Puerto Real, Cadiz (Spain); Pizarro, J [Departamento de Lenguajes y Sistemas Informaticos, Universidad de Cadiz, Puerto Real, Cadiz (Spain); Galindo, P L [Departamento de Lenguajes y Sistemas Informaticos, Universidad de Cadiz, Puerto Real, Cadiz (Spain); Garcia, R [Departamento de Ciencia de los Materiales e I. M. y Q. I., Universidad de Cadiz, Puerto Real, Cadiz (Spain); Trevisi, G [CNR-IMEM Institute, Parco delle Scienze 37a, 43100, Parma (Italy); Frigeri, P [CNR-IMEM Institute, Parco delle Scienze 37a, 43100, Parma (Italy); Nasi, L [CNR-IMEM Institute, Parco delle Scienze 37a, 43100, Parma (Italy); Franchi, S [CNR-IMEM Institute, Parco delle Scienze 37a, 43100, Parma (Italy); Molina, S I [Departamento de Ciencia de los Materiales e I. M. y Q. I., Universidad de Cadiz, Puerto Real, Cadiz (Spain)

    2007-11-28

    A novel peak finding method to map the strain from high resolution transmission electron micrographs, known as the Peak Pairs method, has been applied to In(Ga)As/AlGaAs quantum dot (QD) samples, which present stacking faults emerging from the QD edges. Moreover, strain distribution has been simulated by the finite element method applying the elastic theory on a 3D QD model. The agreement existing between determined and simulated strain values reveals that these techniques are consistent enough to qualitatively characterize the strain distribution of nanostructured materials. The correct application of both methods allows the localization of critical strain zones in semiconductor QDs, predicting the nucleation of defects, and being a very useful tool for the design of semiconductor devices.

  20. High-Efficiency Colloidal Quantum Dot Photovoltaics via Robust Self-Assembled Monolayers

    KAUST Repository

    Kim, Gi-Hwan; Garcí a de Arquer, F. Pelayo; Yoon, Yung Jin; Lan, Xinzheng; Liu, Mengxia; Voznyy, Oleksandr; Yang, Zhenyu; Fan, Fengjia; Ip, Alexander H.; Kanjanaboos, Pongsakorn; Hoogland, Sjoerd; Kim, Jin Young; Sargent, Edward H.

    2015-01-01

    to voltage. With this goal in mind, self-assembled monolayers (SAMs) can be used to modify interface energy levels locally. However, to be effective SAMs must be made robust to treatment using the various solvents and ligands required for to fabricate high

  1. Stress evolution during growth of bilayer self-assembled InAs/GaAs quantum dots

    International Nuclear Information System (INIS)

    Schaadt, D.M.; Krauss, S.; Koch, R.; Ploog, K.H.

    2006-01-01

    We investigated the stress evolution during molecular-beam epitaxy of bilayer InAs/GaAs(001) quantum dot (QD) structures in real time and with sub-monolayer precision using an in-situ cantilever beam setup. During growth of the InAs at 470 C a stress of 5.1 GPa develops in the wetting layer, in good agreement with the theoretical misfit stress. At a critical thickness of 1.5 monolayers the strain is relieved by the QD formation. In the case of InAs/GaAs bilayer structures, the second InAs layer grows identical to the first for GaAs spacer thicknesses exceeding ∝13 nm. For thinner spacers the critical thickness for the 2D/3D transition in the second layer decreases. The stress of the second InAs layer does not reach the value of the first, indicating that InAs QDs grow on partially strained areas due to the strain field of the previous InAs layer. (orig.)

  2. The convergence of quantum-dot-mediated fluorescence resonance energy transfer and microfluidics for monitoring DNA polyplex self-assembly in real time

    International Nuclear Information System (INIS)

    Ho Yiping; Wang, T-H; Chen, Hunter H; Leong, Kam W

    2009-01-01

    We present a novel convergence of quantum-dot-mediated fluorescence resonance energy transfer (QD-FRET) and microfluidics, through which molecular interactions were precisely controlled and monitored using highly sensitive quantum-dot-mediated FRET. We demonstrate its potential in studying the kinetics of self-assembly of DNA polyplexes under laminar flow in real time with millisecond resolution. The integration of nanophotonics and microfluidics offers a powerful tool for elucidating the formation of polyelectrolyte polyplexes, which is expected to provide better control and synthesis of uniform and customizable polyplexes for future nucleic acid-based therapeutics.

  3. Magnetic-field-induced Fermi-edge singularity in the tunneling current through an InAs self-assembled quantum dot

    International Nuclear Information System (INIS)

    Khanin, Yu. N.; Vdovin, E. E.; Eaves, L.; Larkin, I. A.; Patane, A.; Makarovskii, O. N.; Henini, M.

    2007-01-01

    The results of the investigation of tunneling transport through a GaAs/(AlGa)As/GaAs single-barrier heterostructure containing InAs self-assembled quantum dots at low temperatures are reported. An anomalous increase in the tunneling current through the quantum dots has been observed in the presence of a magnetic field both parallel and perpendicular to the current. This increase is a manifestation of a Fermi-edge singularity appearing in the current due to the interaction of a tunneling electron with the electron gas in an emitter

  4. Size dependence of the wavefunction of self-assembled InAs quantum dots from time-resolved optical measurements

    DEFF Research Database (Denmark)

    Johansen, Jeppe; Stobbe, Søren; Nikolaev, Ivan S.

    2008-01-01

    and a theoretical model, we determine the striking dependence of the overlap of the electron and hole wavefunctions on the quantum dot size. We conclude that the optical quality is best for large quantum dots, which is important in order to optimally tailor quantum dot emitters for, e.g., quantum electrodynamics......The radiative and nonradiative decay rates of InAs quantum dots are measured by controlling the local density of optical states near an interface. From time-resolved measurements, we extract the oscillator strength and the quantum efficiency and their dependence on emission energy. From our results...

  5. Effect of ligand self-assembly on nanostructure and carrier transport behaviour in CdSe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Li, Kuiying, E-mail: kuiyingli@ysu.edu.cn; Xue, Zhenjie

    2014-11-14

    Adjustment of the nanostructure and carrier behaviour of CdSe quantum dots (QDs) by varying the ligands used during QD synthesis enables the design of specific quantum devices via a self-assembly process of the QD core–shell structure without additional technologies. Surface photovoltaic (SPV) technology supplemented by X-ray diffractometry and infrared absorption spectroscopy were used to probe the characteristics of these QDs. Our study reveals that while CdSe QDs synthesized in the presence of and capped by thioglycolic acid, 3-mercaptopropionic acid, mercaptoethanol or α-thioglycerol ligands display zinc blende nanocrystalline structures, CdSe QDs modified by L-cysteine possess wurtzite nanocrystalline structures, because different end groups in these ligands induce distinctive nucleation and growth mechanisms. Carboxyl end groups in the ligand served to increase the SPV response of the QDs, when illuminated by hν ≥ E{sub g,nano-CdSe}. Increased length of the alkyl chains and side-chain radicals in the ligands partially inhibit photo-generated free charge carrier (FCC) transfer transitions of CdSe QDs illuminated by photon energy of 4.13 to 2.14 eV. The terminal hydroxyl group might better accommodate energy released in the non-radiative de-excitation process of photo-generated FCCs in the ligand's lowest unoccupied molecular orbital in the 300–580 nm wavelength region, when compared with other ligand end groups. - Highlights: • CdSe QDs modified by L-cysteine possess wurtzite nanocrystalline structures. • Carboxyl end groups in the ligand serve to increase the SPV response of CdSe QDs. • Terminal hydroxyl group in the ligand might accommodate non-radiative de-excitation process in CdSe QDs. • Increased length of the alkyl chains and side-chain radicals in the ligands partially inhibit carriers transport of CdSe QDs.

  6. Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition

    Science.gov (United States)

    Colocci, M.; Bogani, F.; Carraresi, L.; Mattolini, R.; Bosacchi, A.; Franchi, S.; Frigeri, P.; Rosa-Clot, M.; Taddei, S.

    1997-06-01

    Self-assembled InAs quantum dots have been grown by molecular beam epitaxy in such a way as to obtain a continuous variation of InAs coverages across the wafer. Structured photoluminescence spectra are observed after excitation of a large number of dots; deconvolution into Gaussian components yields narrow emission bands (full width at half-maximum 20-30 meV) separated in energy by an average spacing of 30-40 meV. We ascribe the individual bands of the photoluminescence spectra after low excitation to families of dots with similar shapes and with heights differing by one monolayer, as strongly supported by numerical calculations of the fundamental electronic transitions in quantum dot structures.

  7. Narrow optical linewidths and spin pumping on charge-tunable close-to-surface self-assembled quantum dots in an ultrathin diode

    Science.gov (United States)

    Löbl, Matthias C.; Söllner, Immo; Javadi, Alisa; Pregnolato, Tommaso; Schott, Rüdiger; Midolo, Leonardo; Kuhlmann, Andreas V.; Stobbe, Søren; Wieck, Andreas D.; Lodahl, Peter; Ludwig, Arne; Warburton, Richard J.

    2017-10-01

    We demonstrate full charge control, narrow optical linewidths, and optical spin pumping on single self-assembled InGaAs quantum dots embedded in a 162.5 -nm -thin diode structure. The quantum dots are just 88 nm from the top GaAs surface. We design and realize a p -i -n -i -n diode that allows single-electron charging of the quantum dots at close-to-zero applied bias. In operation, the current flow through the device is extremely small resulting in low noise. In resonance fluorescence, we measure optical linewidths below 2 μ eV , just a factor of 2 above the transform limit. Clear optical spin pumping is observed in a magnetic field of 0.5 T in the Faraday geometry. We present this design as ideal for securing the advantages of self-assembled quantum dots—highly coherent single-photon generation, ultrafast optical spin manipulation—in the thin diodes required in quantum nanophotonics and nanophononics applications.

  8. Competition between the In/Ga intermixing and the electronic coupling effects in self-assembled InAs/GaAs double-quantum-dots

    Energy Technology Data Exchange (ETDEWEB)

    Pocas, Luiz Carlos; Sawata, Marcella Ferraz [Universidade Tecnologica Federal do Parana (UTFPR), Apucarana, PR (Brazil); Lourenco, Sidney Alves [Universidade Tecnologica Federal do Parana (UTFPR), Londrina, PR (Brazil); Laureto, Edson; Duarte, Jose Leonil; Dias, Ivan Frederico Lupiano [Universidade Estadual de Londrina (UEL), PR (Brazil). Dept. de Fisica; Quivy, A.A. [Universidade de Sao Paulo (IF/USP), SP (Brazil). Inst. de Fisica

    2012-07-01

    Full text: The notable progress in the fabrication of low-dimensional semiconductor structures during the last years has made it possible to reduce the effective device dimension from three-dimensional bulk materials, to low dimensional quantum systems, as for example, to quasi-two dimensional quantum well systems and to quasi-zero dimensional quantum dots systems. Semiconductors quantum dots (QDs) have attracted considerable interest from both fundamental and technological point of view and have been extensively studied in aspects involving its structural properties and the electronic structure of the confined charge carriers. These systems have been utilized for applications on optoelectronics devices such as lasers, detectors, photodiodes, solar cells, etc. In despite of its fundamental importance, many aspects of their behavior are still not fully understood including, as for example, carrier capture and escape, optical transitions, effects of the inhomogeneous size and energy distribution, etc. Quantum dots grown by Stranski-Krastanov (SK) technique are self-assembled islands, favored by relaxation of the elastic energy that emerge due to the difference of lattice parameter between the epitaxial layer and the substratum. One of the challenges in growing of QDs by SK is to have control of both size and distribution of the islands in the samples. Recently, the growth of samples with vertically stacked multilayer separated by a layer of another semiconductor material, known as stacked QDs, have shown a vertical alignment of QDs which leads to a better QDs size distribution for the upper layers. The strength of electronic coupling, in the case of vertically stacked QDs, as well as the QDs size distribution, is controlled by thickness of the layers that separate the quantum dots (spacer layers). In this work we present a study from a set of self-assembled stacked InAs/GaAs double-quantum-dots grown on GaAs-(001) substrates by molecular beam epitaxy obtained by SK

  9. The role of strain-driven in migration in the growth of self-assembled InAs quantum dots on InP

    CERN Document Server

    Yoon, S H; Lee, T W; Hwang, H D; Yoon, E J; Kim, Y D

    1999-01-01

    Self-assembled InAs quantum dots (SAQDs) were grown on InP by metalorganic chemical vapor deposition. The amount of excess InAs and the aspect ratio of the SAQD increased with temperature and V/III ratio. It is explained that the As/P exchange reaction at the surface played an important role in the kinetics of SAQD formation. Insertion of a lattice-matched InGaAs buffer layer suppressed the excess InAs formation, and lowered the aspect ratio. Moreover, the dots formed on InGaAs buffer layers were faceted, whereas those on InP were hemispherical, confirming the effect of the As/P exchange reaction. The shape of InAs quantum dots on InGaAs buffer layers was a truncated pyramid with four [136] facets and base edges parallel to directions.

  10. Dispersion of the electron g factor anisotropy in InAs/InP self-assembled quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Belykh, V. V., E-mail: vasilii.belykh@tu-dortmund.de [Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund (Germany); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991 (Russian Federation); Yakovlev, D. R.; Bayer, M. [Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund (Germany); Ioffe Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Schindler, J. J. [Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund (Germany); Bree, J. van; Koenraad, P. M.; Silov, A. Yu., E-mail: A.Y.Silov@tue.nl [Department of Applied Physics and COBRA Research Institute, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Averkiev, N. S. [Ioffe Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

    2016-08-28

    The electron g factor in an ensemble of InAs/InP quantum dots with emission wavelengths around 1.4 μm is measured using time-resolved pump-probe Faraday rotation spectroscopy in different magnetic field orientations. Thereby, we can extend recent single dot photoluminescence measurements significantly towards lower optical transition energies through 0.86 eV. This allows us to obtain detailed insight into the dispersion of the recently discovered g factor anisotropy in these infrared emitting quantum dots. We find with decreasing transition energy over a range of 50 meV a strong enhancement of the g factor difference between magnetic field normal and along the dot growth axis, namely, from 1 to 1.7. We argue that the g factor cannot be solely determined by the confinement energy, but the dot asymmetry underlying this anisotropy therefore has to increase with increasing dot size.

  11. Functionalized Self-Assembled InAs/GaAs Quantum-Dot Structures Hybridized with Organic Molecules

    DEFF Research Database (Denmark)

    Chen, Miaoxiang Max; Kobashi, K.; Chen, B.

    2010-01-01

    Low-dimensional III-V semiconductors have many advantages over other semiconductors; however, they are not particularly stable under physiological conditions. Hybridizing biocompatible organic molecules with advanced optical and electronic semiconductor devices based on quantum dots (QDs...

  12. Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Gauthier, J.-P.; Almosni, S.; Léger, Y.; Perrin, M.; Even, J.; Cornet, C., E-mail: charles.cornet@insa-rennes.fr; Durand, O. [UMR FOTON, CNRS, INSA-Rennes, F-35708 Rennes (France); Robert, C. [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Balocchi, A.; Carrère, H.; Marie, X. [Université de Toulouse, INSA-CNRS-UPS, LPCNO, F-31077 Toulouse (France)

    2014-12-15

    We report on the structural and optical properties of (In,Ga)AsN self-assembled quantum dots grown on GaP (001) substrate. A comparison with nitrogen free (In,Ga)As system is presented, showing a clear modification of growth mechanisms and a significant shift of the photoluminescence spectrum. Low temperature carrier recombination dynamics is studied by time-resolved photoluminescence, highlighting a drastic reduction of the characteristic decay-time when nitrogen is incorporated in the quantum dots. Room temperature photoluminescence is observed at 840 nm. These results reveal the potential of (In,Ga)AsN as an efficient active medium monolithically integrated on Si for laser applications.

  13. Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering

    Science.gov (United States)

    Colocci, M.; Vinattieri, A.; Lippi, L.; Bogani, F.; Rosa-Clot, M.; Taddei, S.; Bosacchi, A.; Franchi, S.; Frigeri, P.

    1999-01-01

    Multilayer structures of InAs quantum dots have been studied by means of photoluminescence techniques. A strong increase of the radiative lifetime with increasing number of stacked dot layers has been observed at low temperatures. Moreover, a strong temperature dependence of the radiative lifetime, which is not present in the single layer samples, has been found in the multistacked structures. The observed effects are nicely explained as a consequence of the electronic coupling between electrons and holes induced by vertical ordering.

  14. Excited state dynamics in In0.5Al0.04Ga0.46As/Al0.08Ga0.92As self-assembled quantum dots

    DEFF Research Database (Denmark)

    Smith, L.M.; Leosson, Kristjan; Østergaard, John Erland

    2001-01-01

    We use time-resolved photoluminescence spectroscopy to probe the relaxation of excited states in In0.5Al0.04Ga0.40As/Al0.08Ga0.92As self-assembled quantum dots. The relaxation rate of excitons confined to the quantum dots increases by nearly an order of magnitude as the energy of the states...... approaches the top of the quantum dot potential. This dramatic change in the dynamics of these states reflects the increasing complexity of the states localized near the top of the quantum dots....

  15. Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

    KAUST Repository

    Khan, Mohammed Zahed Mustafa; Ng, Tien Khee; Ooi, Boon S.

    2014-01-01

    The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, advancement in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers and optical amplifiers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting and amplifying information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Subsequent achievements for lasers and amplifiers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. We herein reviewed the1 progress of both Qdots and Qdash devices, based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance. In particular, we discussed the progress in lasers, semiconductor optical amplifiers (SOA), mode locked lasers, and superluminescent diodes, which are the building

  16. Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

    KAUST Repository

    Khan, Mohammed Zahed Mustafa

    2014-11-01

    The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, advancement in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers and optical amplifiers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting and amplifying information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Subsequent achievements for lasers and amplifiers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. We herein reviewed the1 progress of both Qdots and Qdash devices, based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance. In particular, we discussed the progress in lasers, semiconductor optical amplifiers (SOA), mode locked lasers, and superluminescent diodes, which are the building

  17. Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE

    International Nuclear Information System (INIS)

    Kumar, Mahesh; Roul, Basanta; Bhat, Thirumaleshwara N.; Rajpalke, Mohana K.; Sinha, Neeraj; Kalghatgi, A. T.; Krupanidhi, S. B.

    2011-01-01

    One of the scientific challenges of growing InN quantum dots (QDs), using Molecular beam epitaxy (MBE), is to understand the fundamental processes that control the morphology and distribution of QDs. A systematic manipulation of the morphology, optical emission, and structural properties of InN/Si (111) QDs is demonstrated by changing the growth kinetics parameters such as flux rate and growth time. Due to the large lattice mismatch, between InN and Si (∼8%), the dots formed from the Strannski–Krastanow (S–K) growth mode are dislocated. Despite the variations in strain (residual) and the shape, both the dot size and pair separation distribution show the scaling behavior. We observed that the distribution of dot sizes, for samples grown under varying conditions, follow the scaling function.

  18. Quantum Dots

    Science.gov (United States)

    Tartakovskii, Alexander

    2012-07-01

    Part I. Nanostructure Design and Structural Properties of Epitaxially Grown Quantum Dots and Nanowires: 1. Growth of III/V semiconductor quantum dots C. Schneider, S. Hofling and A. Forchel; 2. Single semiconductor quantum dots in nanowires: growth, optics, and devices M. E. Reimer, N. Akopian, M. Barkelid, G. Bulgarini, R. Heeres, M. Hocevar, B. J. Witek, E. Bakkers and V. Zwiller; 3. Atomic scale analysis of self-assembled quantum dots by cross-sectional scanning tunneling microscopy and atom probe tomography J. G. Keizer and P. M. Koenraad; Part II. Manipulation of Individual Quantum States in Quantum Dots Using Optical Techniques: 4. Studies of the hole spin in self-assembled quantum dots using optical techniques B. D. Gerardot and R. J. Warburton; 5. Resonance fluorescence from a single quantum dot A. N. Vamivakas, C. Matthiesen, Y. Zhao, C.-Y. Lu and M. Atature; 6. Coherent control of quantum dot excitons using ultra-fast optical techniques A. J. Ramsay and A. M. Fox; 7. Optical probing of holes in quantum dot molecules: structure, symmetry, and spin M. F. Doty and J. I. Climente; Part III. Optical Properties of Quantum Dots in Photonic Cavities and Plasmon-Coupled Dots: 8. Deterministic light-matter coupling using single quantum dots P. Senellart; 9. Quantum dots in photonic crystal cavities A. Faraon, D. Englund, I. Fushman, A. Majumdar and J. Vukovic; 10. Photon statistics in quantum dot micropillar emission M. Asmann and M. Bayer; 11. Nanoplasmonics with colloidal quantum dots V. Temnov and U. Woggon; Part IV. Quantum Dot Nano-Laboratory: Magnetic Ions and Nuclear Spins in a Dot: 12. Dynamics and optical control of an individual Mn spin in a quantum dot L. Besombes, C. Le Gall, H. Boukari and H. Mariette; 13. Optical spectroscopy of InAs/GaAs quantum dots doped with a single Mn atom O. Krebs and A. Lemaitre; 14. Nuclear spin effects in quantum dot optics B. Urbaszek, B. Eble, T. Amand and X. Marie; Part V. Electron Transport in Quantum Dots Fabricated by

  19. Structural characterization of GaAs self-assembled quantum dots grown by Droplet Epitaxy on Ge virtual substrates on Si

    International Nuclear Information System (INIS)

    Frigeri, C.; Bietti, S.; Isella, G.; Sanguinetti, S.

    2013-01-01

    The structure of self-assembled quantum dots (QDs) grown by Droplet Epitaxy on Ge virtual substrates has been investigated by TEM. The QDs have a pyramidal shape with base and height of 50 nm. By (0 0 2) dark field TEM it was seen that the pyramid top is Ga poor and Al rich most likely because of the higher mobility of Ga along the pyramid sides down to the base. The investigated QDs contain defects identified as As precipitates by Moirè fringes. The smallest ones (3–5 nm) are coherent with the GaAs lattice suggesting that they could be a cubic phase of As precipitation. It seems to be a metastable phase since the hexagonal phase is recovered as the precipitate size increases above ∼5 nm.

  20. High-temperature operation of self-assembled GaInNAs/GaAsN quantum-dot lasers grown by solid-source molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Liu, C.Y.; Yoon, S.F.; Sun, Z.Z.; Yew, K.C.

    2006-01-01

    Self-assembled GaInNAs/GaAsN single layer quantum-dot (QD) lasers grown using solid-source molecular-beam epitaxy have been fabricated and characterized. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is ∼1.05 kA/cm 2 from a GaInNAs QD laser (50x1700 μm 2 ) at 10 deg. C. High-temperature operation up to 65 deg. C was also demonstrated from an unbonded GaInNAs QD laser (50x1060 μm 2 ), with high characteristic temperature of 79.4 K in the temperature range of 10-60 deg. C

  1. Hot exciton relaxation in multiple layers CdSe/ZnSe self-assembled quantum dots separated by thick ZnSe barriers

    International Nuclear Information System (INIS)

    Eremenko, M; Budkin, G; Reznitsky, A

    2015-01-01

    We have studied PL and PLE spectra of two samples (A and B) of MBE grown CdSe/ZnSe asymmetric double quantum wells with different amount of deposited CdSe layers separated by 14 nm ZnSe barrier. It has been found that PLE spectra of the states forming short wavelength side of the PL spectra of both deep and shallow QWs of the sample A as well as that of deep QW of the sample B demonstrate oscillating structure in the spectral ranges corresponding to exciton states of self-assembled quantum dots only. Meanwhile PLE spectra of the short wavelength states of shallow QW the sample B revealed pronounced oscillating structure with energy period of ZnSe LO phonon under excitation with photons in a wide energy range both in the regions of quantum-dot states and in that of free states in the ZnSe barrier. In these spectra creating of excitons with kinetic energies more than 0.3 eV was observed which considerably exceed the exciton binding energy as well as LO phonon energy (both appr. 0.03 eV). It has been concluded that oscillating structure of the PLE spectra arises due to cascade relaxation of hot excitons. We discuss the model which explains these experimental findings. (paper)

  2. Hot exciton relaxation in multiple layers CdSe/ZnSe self-assembled quantum dots separated by thick ZnSe barriers

    Science.gov (United States)

    Eremenko, M.; Budkin, G.; Reznitsky, A.

    2015-11-01

    We have studied PL and PLE spectra of two samples (A and B) of MBE grown CdSe/ZnSe asymmetric double quantum wells with different amount of deposited CdSe layers separated by 14 nm ZnSe barrier. It has been found that PLE spectra of the states forming short wavelength side of the PL spectra of both deep and shallow QWs of the sample A as well as that of deep QW of the sample B demonstrate oscillating structure in the spectral ranges corresponding to exciton states of self-assembled quantum dots only. Meanwhile PLE spectra of the short wavelength states of shallow QW the sample B revealed pronounced oscillating structure with energy period of ZnSe LO phonon under excitation with photons in a wide energy range both in the regions of quantum-dot states and in that of free states in the ZnSe barrier. In these spectra creating of excitons with kinetic energies more than 0.3 eV was observed which considerably exceed the exciton binding energy as well as LO phonon energy (both appr. 0.03 eV). It has been concluded that oscillating structure of the PLE spectra arises due to cascade relaxation of hot excitons. We discuss the model which explains these experimental findings.

  3. Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

    Directory of Open Access Journals (Sweden)

    Yoon SF

    2006-01-01

    Full Text Available AbstractSelf-assembled GaInNAs quantum dots (QDs were grown on GaAs (001 substrate using solid-source molecular-beam epitaxy (SSMBE equipped with a radio-frequency nitrogen plasma source. The GaInNAs QD growth characteristics were extensively investigated using atomic-force microscopy (AFM, photoluminescence (PL, and transmission electron microscopy (TEM measurements. Self-assembled GaInNAs/GaAsN single layer QD lasers grown using SSMBE have been fabricated and characterized. The laser worked under continuous wave (CW operation at room temperature (RT with emission wavelength of 1175.86 nm. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is ∼1.05 kA/cm2from a GaInNAs QD laser (50 × 1,700 µm2 at 10 °C. High-temperature operation up to 65 °C was demonstrated from an unbonded GaInNAs QD laser (50 × 1,060 µm2, with high characteristic temperature of 79.4 K in the temperature range of 10–60 °C.

  4. Formation of self-assembled quantum dots of iron oxide thin films by spray pyrolysis from non-aqueous medium

    International Nuclear Information System (INIS)

    Desai, J.D.; Pathan, H.M.; Min, Sun-Ki; Jung, Kwang-Deog; Joo, Oh-Shim

    2006-01-01

    Quantum dots (QDs) of iron oxide have been deposited onto ITO coated glass substrates by spray pyrolysis technique, using ferric chloride (FeCl 3 .7H 2 O) in non-aqueous medium as a starting material. The non-aqueous solvents namely methanol, ethanol, propanol, butanol and pentanol were used as solvents. The effect of solvents on the film structure and morphology was studied. The structural, morphological, compositional and optical properties were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive analysis of X-rays (EDAX), and optical absorption measurement techniques

  5. Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm

    International Nuclear Information System (INIS)

    Shimomura, K.; Kamiya, I.

    2015-01-01

    Photoluminescence (PL) at wavelengths over 1.55 μm from self-assembled InAs quantum dots (QDs) grown on GaAs(001) is observed at room temperature (RT) and 4 K using a bilayer structure with thin cap. The PL peak has been known to redshift with decreasing cap layer thickness, although accompanying intensity decrease and peak broadening. With our strain-controlled bilayer structure, the PL intensity can be comparable to the ordinary QDs while realizing peak emission wavelength of 1.61 μm at 4 K and 1.73 μm at RT. The key issue lies in the control of strain not only in the QDs but also in the cap layer. By combining with underlying seed QD layer, we realize strain-driven bandgap engineering through control of strain in the QD and cap layers

  6. Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm

    Energy Technology Data Exchange (ETDEWEB)

    Shimomura, K., E-mail: sd12502@toyota-ti.ac.jp; Kamiya, I., E-mail: kamiya@toyota-ti.ac.jp [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan)

    2015-02-23

    Photoluminescence (PL) at wavelengths over 1.55 μm from self-assembled InAs quantum dots (QDs) grown on GaAs(001) is observed at room temperature (RT) and 4 K using a bilayer structure with thin cap. The PL peak has been known to redshift with decreasing cap layer thickness, although accompanying intensity decrease and peak broadening. With our strain-controlled bilayer structure, the PL intensity can be comparable to the ordinary QDs while realizing peak emission wavelength of 1.61 μm at 4 K and 1.73 μm at RT. The key issue lies in the control of strain not only in the QDs but also in the cap layer. By combining with underlying seed QD layer, we realize strain-driven bandgap engineering through control of strain in the QD and cap layers.

  7. Evaporation-induced self-assembly of quantum dots-based concentric rings on polymer-based nanocomposite films.

    Science.gov (United States)

    Zhang, Shaofu; Luan, Weiling; Zhong, Qixin; Yin, Shaofeng; Yang, Fuqian

    2016-10-12

    The "ball-on-film" template is used to construct concentric rings on the surface of PMMA-QDs (polymethyl methacrylate - quantum dots) nanocomposite films via the evaporation of pure chloroform droplets, which are confined by a steel ball. The concentric rings consist of QDs, as revealed by the fluorescence images of the concentric rings. The photoluminescence intensity of the concentric rings increases with the increase of the distance to the ball center, suggesting that the amount of QDs accumulated around the contact line at individual stick state increases with the increase of the distance to the ball center. Both the wavelength and cross-sectional area (width) of the concentric rings increase approximately linearly with increasing distance to the ball center, independent of the ball size, the film thickness and the QDs concentration. For the PMMA-QDs nanocomposite films prepared from the same QDs concentration in chloroform, the thicker the PMMA-QDs nanocomposite film, the larger the wavelength for the same distance to the ball center. The effect of confinement of two steel balls on the surface patterns over the PMMA-QDs nanocomposite films is studied via a template of "two spheres on film". Symmetric surface patterns are formed. There exist two types of featureless zone between the two balls, depending on the distance between the two balls: one is the inner featureless zone and the other is the outer featureless zone. The size of both featureless zones increases with the increase of the ball distance.

  8. The dynamic characteristics and linewidth enhancement factor of quasi-supercontinuum self-assembled quantum dot lasers

    KAUST Repository

    Tan, Cheeloon

    2009-09-01

    The theoretical analysis of optical gain and chirp characteristics of a semiconductor quantum dot (Qdot) broadband laser is presented. The model based on population rate equations, has been developed to investigate the multiple states lasing or quasi-supercontinuum lasing in InGaAs/GaAs Qdot laser. The model takes into account factors such as Qdot size fluctuation, finite carrier lifetime in each confined energy states, wetting layer induced nonconfined states and the presence of continuum states. Hence, calculation of the linewidth enhancement factor together with the variation of optical gain and index change across the spectrum of interest becomes critical to yield a basic understanding on the limitation of this new class of lasers. Such findings are important for the design of a practical single broadband laser diode for applications in low coherence interferometry sensing and optical fiber communications. Calculation results show that the linewidth enhancement factor from the ground state of broadband Qdot lasers (α ∼ 3) is slightly larger but in the same order of magnitude as compared to that of conventional Qdot lasers. The gain spectrum of the quasi-supercontinuum lasing system exhibits almost twice the bandwidth than conventional lasers but with comparable material differential gain (∼ 10-16 cm2) and material differential refractive index (∼ 10sup>-20 cm3 ) near current threshold. © 2009 IEEE.

  9. The dynamic characteristics and linewidth enhancement factor of quasi-supercontinuum self-assembled quantum dot lasers

    KAUST Repository

    Tan, Cheeloon; Wang, Yang; Djie, Hery Susanto; Ooi, Boon S.

    2009-01-01

    The theoretical analysis of optical gain and chirp characteristics of a semiconductor quantum dot (Qdot) broadband laser is presented. The model based on population rate equations, has been developed to investigate the multiple states lasing or quasi-supercontinuum lasing in InGaAs/GaAs Qdot laser. The model takes into account factors such as Qdot size fluctuation, finite carrier lifetime in each confined energy states, wetting layer induced nonconfined states and the presence of continuum states. Hence, calculation of the linewidth enhancement factor together with the variation of optical gain and index change across the spectrum of interest becomes critical to yield a basic understanding on the limitation of this new class of lasers. Such findings are important for the design of a practical single broadband laser diode for applications in low coherence interferometry sensing and optical fiber communications. Calculation results show that the linewidth enhancement factor from the ground state of broadband Qdot lasers (α ∼ 3) is slightly larger but in the same order of magnitude as compared to that of conventional Qdot lasers. The gain spectrum of the quasi-supercontinuum lasing system exhibits almost twice the bandwidth than conventional lasers but with comparable material differential gain (∼ 10-16 cm2) and material differential refractive index (∼ 10sup>-20 cm3 ) near current threshold. © 2009 IEEE.

  10. Influence of the growth conditions on the optical and structural properties of self-assembled InAs/GaAs quantum dots for low As/In ratio

    Energy Technology Data Exchange (ETDEWEB)

    Ozdemir, Samet; Suyolcu, Y. Eren [Advanced Technologies Research Unit: Nanotechnology, Graduate School of Sciences, Anadolu University, Yunusemre Campus, 26470 Eskisehir (Turkey); Turan, Servet [Department of Materials Science and Engineering, Anadolu University, Iki Eylul Campus, 26555 Eskisehir (Turkey); Aslan, Bulent, E-mail: bulentaslan@anadolu.edu.tr [Department of Physics, Anadolu University, Yunusemre Campus, 26470 Eskisehir (Turkey)

    2017-01-15

    Highlights: • Effects of systematically changed growth conditions on InAs/GaAs QDs were studied. • Growths were optimized for low As/In flux ratio to obtain well-resolved PL spectra. • XRD rocking curve signal fitting was used to analyze the samples. • XRD analysis reflects the overall tendency of the QD density and WL behavior. - Abstract: We report on the growth and characterization of self-assembled InAs/GaAs quantum dots (QDs). The influence of the systematically changed growth conditions on the opto-electronic and structural properties of the QDs were investigated. Combination of the amount of the deposited InAs, growth temperature and growth rate were optimized for low As/In flux ratio to obtain well-resolved ground and excited states in the low temperature photoluminescence (PL) spectra. SEM and TEM techniques were also used for the characterization of QDs. The results were evaluated simply through the conservation of mass approximation and the x-ray diffraction measurements with fitted curves. The extracted InAs and wetting layer thicknesses were brought out that the XRD analysis reflects the overall tendency of the QD density change and WL behaviors in response to the changes in growth conditions.

  11. A CE-FL based method for real-time detection of in-capillary self-assembly of the nanoconjugates of polycysteine ligand and quantum dots.

    Science.gov (United States)

    Wang, Jianhao; Zhu, Zhilan; Qiu, Lin; Wang, Jianpeng; Wang, Xiang; Xiao, Qicai; Xia, Jiang; Liu, Li; Liu, Xiaoqian; Feng, Wei; Wang, Jinmei; Miao, Peng; Gao, Liqian

    2018-07-06

    Small molecules with free thiol groups always show high binding affinity to quantum dots (QDs). However, it is still highly challenging to detect the binding capacity between thiol-containing molecules and QDs inside a capillary. To conquer this limitation, a capillary electrophoresis with fluorescence detection (CE-FL) based assay was proposed and established to investigate the binding capacity between QDs and a poly-thiolated peptide (ATTO 590-DDSSGGCCPGCC, ATTO-C4). Interestingly, the results showed that interval time had a great influence on QDs and ATTO-C4 self-assembly, which can be attributed to longer interval time benefitting the binding of QDs to ATTO-C4. The stability assays on ATTO-C4-QD assembly indicated that high concentration of imidazole or GSH had a high capability of competing with the bound ATTO-C4, evidenced by dramatically dropping of S 625 /S 565 ratio from 0.78 to 0.30 or 0.29. Therefore, all these results above suggested that this novel CE-FL based detection assay could be successfully applied to the binding studies between QDs and thiol-containing biomolecules.

  12. Coherent dynamics of excitons in a stack of self-assembled InAs quantum dots at 1.5-μm waveband

    International Nuclear Information System (INIS)

    Ishi-Hayase, J.; Akahane, K.; Yamamoto, N.; Kujiraoka, M.; Inoue, J.; Ema, K.; Tsuchiya, M.; Sasaki, M.

    2006-01-01

    We investigate the excitonic dephasing in a stack of self-assembled quantum dots (SAQDs) by using a four-wave-mixing (FWM) technique performed in the optical telecomm-fiber wavelength region at 6 K. A sample used in our experiment is a 150-layer stack of InAs SAQDs embedded in InGaAlAs grown on InP(3 1 1)B substrate fabricated by molecular beam epitaxy. By using a novel strain-controlled technique, the resonant wavelength of the exciton ground state (GS) ranges from 1.25 to 1.5 μm which is much longer than that in typical In(Ga)As SAQDs. In the weak excitation region, the intrinsic dephasing time of excitons at the excitation wavelength of 1.43 μm reaches 770 ps which is much longer than that in most SAQDs with the resonant wavelength of <1 μm. We also find a strong anisotoropy of the signal intensity with respect to the crystal axis attributed to the orientation of InP(3 1 1)B substrate and the elongated shape of QDs

  13. Short-range order structures of self-assembled Ge quantum dots probed by multiple-scattering extended x-ray absorption fine structure

    International Nuclear Information System (INIS)

    Sun Zhihu; Wei Shiqiang; Kolobov, A.V.; Oyanagi, H.; Brunner, K.

    2005-01-01

    Multiple-scattering extended x-ray absorption fine structure (MS-EXAFS) has been used to investigate the local structures around Ge atoms in self-assembled Ge-Si quantum dots (QDs) grown on Si(001) substrate. The MS effect of Ge QDs is dominated by the scattering path Ge 0 →B 1 →B 2 →Ge 0 (DS2), which contributes a signal destructively interfering with that of the second shell single-scattering path (SS2). MS-EXAFS analysis reveals that the degree of Ge-Si intermixing for Ge-Si QDs strongly depends on the temperature at which the silicon cap layer is overgrown. It is found that the interatomic distances (R Ge-Ge and R Ge-Si ) within the third nearest-neighbor shells in Ge-Si QDs indicate the compressively strained nature of QDs. The present study demonstrates that the MS-EXAFS provides detailed information on the QDs strain and the Ge-Si mixing beyond the nearest neighbors

  14. Quantum Dots: Theory

    Energy Technology Data Exchange (ETDEWEB)

    Vukmirovic, Nenad; Wang, Lin-Wang

    2009-11-10

    This review covers the description of the methodologies typically used for the calculation of the electronic structure of self-assembled and colloidal quantum dots. These are illustrated by the results of their application to a selected set of physical effects in quantum dots.

  15. Tuning of the hole spin relaxation time in single self-assembled In{sub 1−x}Ga{sub x}As/GaAs quantum dots by electric field

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Hai; Guo, Guang-Can; He, Lixin, E-mail: helx@ustc.edu.cn [Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026 (China); Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026 (China)

    2014-11-28

    We investigate the electric field tuning of the phonon-assisted hole spin relaxation in single self-assembled In{sub 1−x}Ga{sub x}As/GaAs quantum dots (QDs), using an atomistic empirical pseudopotential method. We find that the electric field along the growth direction can tune the hole spin relaxation time for more than one order of magnitude. The electric field can prolong or shorten the hole spin lifetime and the tuning shows an asymmetry in terms of the field direction. The asymmetry is more pronounced for the taller dot. The results show that the electric field is an effective way to tune the hole spin-relaxation in self-assembled QDs.

  16. Self-assembled InAs quantum dots. Properties, modification and emission processes; Selbstorganisierte InAs-Quantenpunkte. Eigenschaften, Modifizierung und Emissionsprozesse

    Energy Technology Data Exchange (ETDEWEB)

    Schramm, A.

    2007-09-06

    In this thesis, structural, optical as well as electronic properties of self-assembled InAs quantum dots (QD) were studied by means of atomic force microscopy (AFM), photoluminescence (PL), capacitance spectroscopy (CV) and capacitance transient spectroscopy (DLTS). The quantum dots were grown with molecular beam epitaxy (MBE) and embedded in Schottky diodes for electrical characterization. In this work growth aspects as well as the electronic structures of QD were discussed. By varying the QD growth parameters it is possible to control the structural, and thus the optical and electronic properties of QD. Two methods are presented. Adjusting the QD growth temperature leads either to small QD with a high areal density or to high QDs with a low density. The structural changes of the QD are reflected in the changes of the optical and electronic properties. The second method is to introduce a growth interruption after capping the QD with thin cap layers. It was shown that capping with AlAs leads to a well-developed alternative to control the QD height and thus the ground-state energies of the QD. A post-growth method modifying the QD properties ist rapid thermal annealing (RTA). Raising the RTA temperature causes a lifting of the QD energy states with respect to the GaAs band edge energy due to In/Ga intermixing processes. A further main part of this work covers the emission processes of charge carriers in QD. Thermal emission, thermally assisted tunneling, and pure tunneling emission are studied by capacitance transient spectroscopy techniques. In DLTS experiments a strong impact of the electric field on the activation energies of electrons was found interfering the correct determination of the QD level energies. This behaviour can be explained by a thermally assisted tunneling model. A modified model taking the Coulomb interaction of occupied QD into account describes the emission rates of the electrons. In order to avoid several emission pathes in the experiments

  17. All-optical control of the g-factor in self-assembled (In,Ga)As/GaAs quantum dots

    NARCIS (Netherlands)

    Quax, G.W.W.

    2008-01-01

    Semiconductor quantum dots have improved solid-state laser technology and introduced a new controllable zero-dimensional system to physicists. Next to laser technology, they can be applied as memory elements and (infrared) detectors as well. Quantum dots are commonly grown by epitaxial methods like

  18. Lab-in-a-drop: controlled self-assembly of CdSe/ZnS quantum dots and quantum rods into polycrystalline nanostructures with desired optical properties

    International Nuclear Information System (INIS)

    Sukhanova, Alyona; Volkov, Yuri; Rogach, Andrey L; Baranov, Alexander V; Susha, Andrei S; Klinov, Dmitriy; Oleinikov, Vladimir; Cohen, Jacques H M; Nabiev, Igor

    2007-01-01

    Among the different nanometre-scale building blocks, colloidal nanocrystals are of special interest in construction of ordered assemblies to be used in optoelectronics, photonics and biosensing. It is important that the nanocrystal properties essential to allow the arrangement process, including their size, shape, surface protection, stabilization and charge, can be controlled along with the electronic structure of each nanocrystal. Here, we describe an operation of the 'lab-in-a-drop', droplets of the aqueous solutions of the water-solubilized CdSe/ZnS core/shell nanocrystal quantum dots and quantum rods, in which a variety of nanostructures with desired properties may be produced. We show that, upon incubation and controlled evaporation of the solvent from the aqueous droplets of nanocrystals, one may produce either nanowires or polycrystalline dendrites of different morphologies and dimensions, depending on the nanocrystal shape and on the very narrow concentration and temperature specific ranges. Hence, the operation of this 'lab-in-a-drop' is controlled by external parameters providing the fluorescent nanostructures of desired size and morphology. Although a majority of the results presented here were obtained with CdSe/ZnS quantum dots and rods, similar polycrystalline patterns may be produced in the aqueous suspensions of other nanocrystals

  19. Growth of self-assembled (Ga)InAs/GaAs quantum dots and realization of high quality microcavities for experiments in the field of strong exciton photon coupling

    International Nuclear Information System (INIS)

    Loeffler, Andreas

    2008-01-01

    At the beginning, we improved the three dimensional optical confinement of the micropillars. The quality factor of the pillars could be increased by the use of higher reflectivity mirrors and a matched V/III ratio for the different epitaxial layers. Hence, a record quality factor of about 90000 was achieved for an active micropillar with 26 (30) mirror pairs in the top (bottom) DBR and a diameter of 4 μm. In parallel to this, we made studies on the growth of self-assembled GaInAs quantum dots on GaAs substrates. Here, the nucleation of three dimensional islands as well as their optical properties were object of the investigation. The morphological properties of the dots were analyzed by transmission and scanning electron microscopy, and the optical properties were investigated by photoluminescence and photoreflectance measurements. The optical and particularly the morphological properties of the self-assembled GaInAs quantum dots were essentially improved. Due to a low strain nucleation layer with an indium content of 30 %, the dot density could be reduced to 6-9 x 10 9 cm -2 and their geometric dimensions were increased to typical lengths between 50 and 100 nm and widths of about 30 nm. The lattice mismatch between the quantum dots and the surrounding matrix is decreased due to the reduced indium content. The minimized strain during the dot growth leads to an enhanced migration length of the deposited atoms on the surface. Finally, the obtained findings of the MBE growth of microcavities, their fabrication and the self-assembled island growth of GaInAs on GaAs were used for the realization of further samples. Low strain GaInAs quantum dots were embedded into the microresonators. These structures allowed for the first time the observation of strong coupling between light and matter in a semiconductor. In case of the low strain quantum dots with enlarged dimensions in the strong coupling regime, a vacuum Rabi-splitting of about 140 μeV between the cavity mode and

  20. Atomic-scale structure and formation of self-assembled In(Ga)As quantum rings

    NARCIS (Netherlands)

    Offermans, P.; Koenraad, P.M.; Wolter, J.H.; Granados, D.; Garcia, J.M.; Fomin, V.; Gladilin, V.N.; Devreese, J.T.

    2006-01-01

    The authors present an at.-scale anal. of the In distribution of self-assembled (In,Ga)As quantum rings (QRs), which are formed from InAs quantum dots by capping with a thin layer of GaAs and subsequent annealing. The size and shape of QRs as obsd. by cross-sectional scanning tunneling microscopy

  1. Origin of localized states in zinc-blende ZnCdSe thin films and the influence on carrier relaxation of self-assembled ZnTe/ZnCdSe quantum dots

    International Nuclear Information System (INIS)

    Lee, Ling; Dai, Yue-Ru; Yang, Chu-Shou; Fan, Wen-Chung; Chou, Wu-Ching

    2015-01-01

    Highlights: • The localized emission in zinc-blende ZnCdSe is induced by excess selenium. • An optimized growth is demonstrated as the VI/II ratio approaches unity. • Size-independent lifetimes are observed in ZnTe/ZnCdSe quantum dots. • Localized electrons in the capping layer dominate size-independent lifetimes. - Abstract: This study discovered the origin of deep level emission in zinc-blende ZnCdSe thin films grown by molecular beam epitaxy, in which a localization behavior was noticed. Pronounced deep level emission observed in films grown under a VI/II ratio of 1.74 (Se-accumulated regime) could be suppressed by a lower VI/II ratio of 1.04 (intermediate regime) and 0.74 (metal-rich regime). Hence the localized states could be correlated to excess selenium accumulated at the growth surface. The localized states also influence the carrier relaxation process of self-assembled ZnTe quantum dots embedded in a ZnCdSe matrix. Once quantum dots surmount the wetting layer, localized electrons in the capping layer dominate the type-II transition and exhibit size-independent lifetimes

  2. Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s-1 directly modulated lasers and 40 Gb s-1 signal-regenerative amplifiers

    International Nuclear Information System (INIS)

    Sugawara, M; Hatori, N; Ishida, M; Ebe, H; Arakawa, Y; Akiyama, T; Otsubo, K; Yamamoto, T; Nakata, Y

    2005-01-01

    This paper presents recent progress in the field of semiconductor lasers and optical amplifiers with InAs-based self-assembled quantum dots in the active region for optical telecommunication. Based on our design in terms of the maximum bandwidth for high-speed modulation and p-type doping in quantum dots for high temperature stability, we realized temperature-insensitive 10 Gb s -1 laser diodes on a GaAs substrate at 1.3 μm. The output waveform at 10 Gb s -1 maintained a clear eye opening, average output power and extinction ratio without current adjustments from 20 deg. C to 70 deg. C. We developed ultrawide-band high-power amplifiers in the 1.5 μm wavelength region on an InP substrate. The amplifier showed ultrafast gain response under gain saturation, and enabled signal regeneration at 40 Gb s -1 by suppressing the '1'-level noise due to the beating between the signal and amplified spontaneous emission. We present our amplifier module with polarization diversity to enable a stable polarization-insensitive performance, and also, discuss prospects for polarization-insensitive quantum dots by the close stacking technique

  3. Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs

    Czech Academy of Sciences Publication Activity Database

    Hazdra, P.; Oswald, Jiří; Hospodková, Alice; Hulicius, Eduard; Pangrác, Jiří

    2013-01-01

    Roč. 543, Sept (2013), 83-87 ISSN 0040-6090 R&D Projects: GA ČR GAP102/10/1201; GA ČR GA202/09/0676 Institutional research plan: CEZ:AV0Z10100521 Keywords : quantum dots * electroluminescence * metalorganic vapor phase epitaxy * InAs * GaAsSb * light emitting diodes Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.867, year: 2013

  4. Self-assembly graphitic carbon nitride quantum dots anchored on TiO_2 nanotube arrays: An efficient heterojunction for pollutants degradation under solar light

    International Nuclear Information System (INIS)

    Su, Jingyang; Zhu, Lin; Geng, Ping; Chen, Guohua

    2016-01-01

    Highlights: • Carbon nitride quantum dots (CNQDs) were decorated onto TiO_2 nanotube arrays (NTAs). • The CNQDs/TiO_2 NTAs exhibits much improved photoelectrochemical activity. • The heterojunction displays efficient removal efficiencies for RhB and phenol. • Pollutants degradation mechanism over CNQDs/TiO_2 NTAs was clarified. - Abstract: In this study, an efficient heterojunction was constructed by anchoring graphitic carbon nitride quantum dots onto TiO_2 nanotube arrays through hydrothermal reaction strategy. The prepared graphitic carbon nitride quantum dots, which were prepared by solid-thermal reaction and sequential dialysis process, act as a sensitizer to enhance light absorption. Furthermore, it was demonstrated that the charge transfer and separation in the formed heterojunction were significantly improved compared with pristine TiO_2. The prepared heterojunction was used as a photoanode, exhibiting much improved photoelectrochemical capability and excellent photo-stability under solar light illumination. The photoelectrocatalytic activities of prepared heterojunction were demonstrated by degradation of RhB and phenol in aqueous solution. The kinetic constants of RhB and phenol degradation using prepared photoelectrode are 2.4 times and 4.9 times higher than those of pristine TiO_2, respectively. Moreover, hydroxyl radicals are demonstrated to be dominant active radicals during the pollutants degradation.

  5. Self-assembly of concentric quantum double rings.

    Science.gov (United States)

    Mano, Takaaki; Kuroda, Takashi; Sanguinetti, Stefano; Ochiai, Tetsuyuki; Tateno, Takahiro; Kim, Jongsu; Noda, Takeshi; Kawabe, Mitsuo; Sakoda, Kazuaki; Kido, Giyuu; Koguchi, Nobuyuki

    2005-03-01

    We demonstrate the self-assembled formation of concentric quantum double rings with high uniformity and excellent rotational symmetry using the droplet epitaxy technique. Varying the growth process conditions can control each ring's size. Photoluminescence spectra emitted from an individual quantum ring complex show peculiar quantized levels that are specified by the carriers' orbital trajectories.

  6. Influence of CdTe sub-monolayer stressor on CdSe quantum dot self-assembling in ZnSe

    International Nuclear Information System (INIS)

    Sedova, I.V.; Lyublinskaya, O.G.; Sorokin, S.V.; Sitnikova, A.A.; Solnyshkov, D.D.; Rykhova, O.V.; Toropov, A.A.; Ivanov, S.V.

    2006-01-01

    This paper reports on the attempt to apply the stressor-controlled quantum dot (QD) fabrication technique to the conventional CdSe/ZnSe nanostructures. Super-strained CdTe fractional monolayer (Δa/a∝14% for CdTe/ZnSe) grown on top of the Te-stabilized ZnSe surface prior to deposition of the QD material (CdSe) has been used as a stressor which is expected to affect size, composition and density of CdSe QDs. The grown structures are studied by X-ray diffraction, transmission-electron microscopy, photoluminescence (PL) and PL excitation in comparison with conventional CdSe/ZnSe QDs obtained by a modified migration enhanced epitaxy technique. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Hybrid nanostructures of well-organized arrays of colloidal quantum dots and a self-assembled monolayer of gold nanoparticles for enhanced fluorescence

    Science.gov (United States)

    Liu, Xiaoying; McBride, Sean P.; Jaeger, Heinrich M.; Nealey, Paul F.

    2016-07-01

    Hybrid nanomaterials comprised of well-organized arrays of colloidal semiconductor quantum dots (QDs) in close proximity to metal nanoparticles (NPs) represent an appealing system for high-performance, spectrum-tunable photon sources with controlled photoluminescence. Experimental realization of such materials requires well-defined QD arrays and precisely controlled QD-metal interspacing. This long-standing challenge is tackled through a strategy that synergistically combines lateral confinement and vertical stacking. Lithographically generated nanoscale patterns with tailored surface chemistry confine the QDs into well-organized arrays with high selectivity through chemical pattern directed assembly, while subsequent coating with a monolayer of close-packed Au NPs introduces the plasmonic component for fluorescence enhancement. The results show uniform fluorescence emission in large-area ordered arrays for the fabricated QD structures and demonstrate five-fold fluorescence amplification for red, yellow, and green QDs in the presence of the Au NP monolayer. Encapsulation of QDs with a silica shell is shown to extend the design space for reliable QD/metal coupling with stronger enhancement of 11 times through the tuning of QD-metal spatial separation. This approach provides new opportunities for designing hybrid nanomaterials with tailored array structures and multiple functionalities for applications such as multiplexed optical coding, color display, and quantum transduction.

  8. Quantum dots

    International Nuclear Information System (INIS)

    Kouwenhoven, L.; Marcus, C.

    1998-01-01

    Quantum dots are man-made ''droplets'' of charge that can contain anything from a single electron to a collection of several thousand. Their typical dimensions range from nanometres to a few microns, and their size, shape and interactions can be precisely controlled through the use of advanced nanofabrication technology. The physics of quantum dots shows many parallels with the behaviour of naturally occurring quantum systems in atomic and nuclear physics. Indeed, quantum dots exemplify an important trend in condensed-matter physics in which researchers study man-made objects rather than real atoms or nuclei. As in an atom, the energy levels in a quantum dot become quantized due to the confinement of electrons. With quantum dots, however, an experimentalist can scan through the entire periodic table by simply changing a voltage. In this article the authors describe how quantum dots make it possible to explore new physics in regimes that cannot otherwise be accessed in the laboratory. (UK)

  9. Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Fernández-Delgado, N., E-mail: natalia.fernandezdelgado@alum.uca.es [Department of Material Science, Metallurgical Engineering and Inorganic Chemistry, IMEYMAT, University of Cádiz, 11510, Puerto Real, Cádiz (Spain); Herrera, M. [Department of Material Science, Metallurgical Engineering and Inorganic Chemistry, IMEYMAT, University of Cádiz, 11510, Puerto Real, Cádiz (Spain); Chisholm, M.F. [Scanning Transmission Electron Microscopy Group, Oak Ridge National Laboratory, TN (United States); Kamarudin, M.A. [Department of Physics, Lancaster University, Lancaster, LA1 4YB (United Kingdom); Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400, UPM Serdang, Selangor (Malaysia); Zhuang, Q.D.; Hayne, M. [Department of Physics, Lancaster University, Lancaster, LA1 4YB (United Kingdom); Molina, S.I. [Department of Material Science, Metallurgical Engineering and Inorganic Chemistry, IMEYMAT, University of Cádiz, 11510, Puerto Real, Cádiz (Spain)

    2017-02-15

    Highlights: • GaSb QDs are more elongated and Sb is less concentrated after the thermal annealing. • The density of misfit dislocations in GaSb QDs is reduced after the annealing. • Threading dislocations in GaSb/GaAs QDs are Sb-rich after the thermal annealing. • The gliding of a threading dislocation favors Sb diffusion in GaSb/GaAs QDs. - Abstract: In this work, the effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs) is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and electron energy loss spectroscopy (EELS) Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed.

  10. Electrical characterization of InAs/InP self-assembled quantum dots with InGaAs strain-relief layers

    International Nuclear Information System (INIS)

    Kim, J. S.; Kim, E. K.; Hwang, H.; Park, K.; Yoon, E.; Park, I. W.; Park, Y. J.

    2004-01-01

    We have investigated the energy levels of InAs quantum dots (QDs) embedded in various barrier layers such as InP, InGaAs and GaAs by using deep level transient spectroscopy (DLTS) measurement. The apparent activation energy of 0.56 eV below the conduction band edge of barrier layers in the InAs/InP QD system was higher than 0.32 eV in the InAs/In 0.53 Ga 0.47 As QD system or 0.29 eV in the InAs/GaAs/In 0.53 Ga 0.47 As QD system, which was inserted in 10 mono-layers (MLs) GaAs between InAs QDs and the InGaAs barrier. The capture barrier heights of InAs QDs in the InAs/InP system was measured at more than about 0.18 eV, showing the existence of strain between QDs and barrier layers. The InAs/GaAs(10 MLs)/InGaAs system also showed about 0.12 eV capture barrier, but the InAs/InGaAs system has a very small barrier. This result might originate from the strain-relief effect due to InGaAs layers.

  11. A layer-by-layer ZnO nanoparticle-PbS quantum dot self-assembly platform for ultrafast interfacial electron injection

    KAUST Repository

    Eita, Mohamed Samir

    2014-08-28

    Absorbent layers of semiconductor quantum dots (QDs) are now used as material platforms for low-cost, high-performance solar cells. The semiconductor metal oxide nanoparticles as an acceptor layer have become an integral part of the next generation solar cell. To achieve sufficient electron transfer and subsequently high conversion efficiency in these solar cells, however, energy-level alignment and interfacial contact between the donor and the acceptor units are needed. Here, the layer-by-layer (LbL) technique is used to assemble ZnO nanoparticles (NPs), providing adequate PbS QD uptake to achieve greater interfacial contact compared with traditional sputtering methods. Electron injection at the PbS QD and ZnO NP interface is investigated using broadband transient absorption spectroscopy with 120 femtosecond temporal resolution. The results indicate that electron injection from photoexcited PbS QDs to ZnO NPs occurs on a time scale of a few hundred femtoseconds. This observation is supported by the interfacial electronic-energy alignment between the donor and acceptor moieties. Finally, due to the combination of large interfacial contact and ultrafast electron injection, this proposed platform of assembled thin films holds promise for a variety of solar cell architectures and other settings that principally rely on interfacial contact, such as photocatalysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs

    NARCIS (Netherlands)

    Offermans, P.; Koenraad, P.M.; Wolter, J.H.; Granados, D.; Garcia, J.M.; Fomin, V.; Gladilin, V.N.; Devreese, J.T.

    2005-01-01

    We present an atomic-scale analysis of the indium distribution of self-assembled In(Ga)As quantum rings (QRs) which are formed from InAs quantum dots by capping with a thin layer of GaAs and subsequent annealing. We find that the size and shape of QRs as observed by cross-sectional scanning

  13. Oscillatory persistent currents in self-assembled quantum rings

    NARCIS (Netherlands)

    Kleemans, N.A.J.M.; Bominaar-Silkens, I.M.A.; Fomin, V.; Gladilin, V.N.; Granados, D.; Taboada, A.G.; Garcia, J.M.; Offermans, P.; Zeitler, U.; Christianen, P.C.M.; Maan, J.C.; Devreese, J.T.; Koenraad, P.M.

    2007-01-01

    We report the direct measurement of the persistent current carried by a single electron by means of magnetization experiments on self-assembled InAs/GaAs quantum rings. We measured the first Aharonov-Bohm oscillation at a field of 14 T, in perfect agreement with our model based on the structural

  14. Assembly of CdSe onto mesoporous TiO{sub 2} films induced by a self-assembled monolayer for quantum dot-sensitized solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Chong, Lai-Wan; Chien, Huei-Ting; Lee, Yuh-Lang [Department of Chemical Engineering, National Cheng Kung University, No. 1 University Road, Tainan 70101 (China)

    2010-08-01

    A self-assembled monolayer (SAM) of 3-mercaptopropyl-trimethyoxysilane (MPTMS) is pre-assembled onto a mesoporous TiO{sub 2} film and is used as a surface-modified layer to induce the growth of CdSe QDs in the successive ionic layer adsorption and reaction (SILAR) process. Due to the specific interaction of the terminal thiol groups to CdSe, the MPTMS SAM is found to increase the nucleation and growth rates of CdSe in the SILAR process, leading to a well covering and higher uniform CdSe layer which has a superior ability, compared with the electrode without MPTMS, in inhibiting the charge recombination at the electrode/electrolyte interface. Furthermore, the performance of the CdSe-sensitized TiO{sub 2} electrode can further be improved by an additional heat annealing after film deposition, attributable to a better interfacial connection between CdSe and TiO{sub 2}, as well as a better connection among CdSe QDs. The CdSe-sensitized solar cell prepared by the present strategy can achieve an energy conversion efficiency of 2.65% under the illumination of one sun (AM 1.5, 100 mW cm{sup -2}). (author)

  15. Oscillatory persistent currents in self-assembled quantum rings.

    Science.gov (United States)

    Kleemans, N A J M; Bominaar-Silkens, I M A; Fomin, V M; Gladilin, V N; Granados, D; Taboada, A G; García, J M; Offermans, P; Zeitler, U; Christianen, P C M; Maan, J C; Devreese, J T; Koenraad, P M

    2007-10-05

    We report the direct measurement of the persistent current carried by a single electron by means of magnetization experiments on self-assembled InAs/GaAs quantum rings. We measured the first Aharonov-Bohm oscillation at a field of 14 T, in perfect agreement with our model based on the structural properties determined by cross-sectional scanning tunneling microscopy measurements. The observed oscillation magnitude of the magnetic moment per electron is remarkably large for the topology of our nanostructures, which are singly connected and exhibit a pronounced shape asymmetry.

  16. Self-assembling hybrid diamond–biological quantum devices

    International Nuclear Information System (INIS)

    Albrecht, A; B Plenio, M; Koplovitz, G; Yochelis, S; Paltiel, Y; Retzker, A; Nevo, Y; Shoseyov, O; Jelezko, F; Porath, D

    2014-01-01

    The realization of scalable arrangements of nitrogen vacancy (NV) centers in diamond remains a key challenge on the way towards efficient quantum information processing, quantum simulation and quantum sensing applications. Although technologies based on implanting NV-centers in bulk diamond crystals or hybrid device approaches have been developed, they are limited by the achievable spatial resolution and by the intricate technological complexities involved in achieving scalability. We propose and demonstrate a novel approach for creating an arrangement of NV-centers, based on the self-assembling capabilities of biological systems and their beneficial nanometer spatial resolution. Here, a self-assembled protein structure serves as a structural scaffold for surface functionalized nanodiamonds, in this way allowing for the controlled creation of NV-structures on the nanoscale and providing a new avenue towards bridging the bio–nano interface. One-, two- as well as three-dimensional structures are within the scope of biological structural assembling techniques. We realized experimentally the formation of regular structures by interconnecting nanodiamonds using biological protein scaffolds. Based on the achievable NV-center distances of 11 nm, we evaluate the expected dipolar coupling interaction with neighboring NV-centers as well as the expected decoherence time. Moreover, by exploiting these couplings, we provide a detailed theoretical analysis on the viability of multiqubit quantum operations, suggest the possibility of individual addressing based on the random distribution of the NV intrinsic symmetry axes and address the challenges posed by decoherence and imperfect couplings. We then demonstrate in the last part that our scheme allows for the high-fidelity creation of entanglement, cluster states and quantum simulation applications. (papers)

  17. Self-assembling hybrid diamond-biological quantum devices

    Science.gov (United States)

    Albrecht, A.; Koplovitz, G.; Retzker, A.; Jelezko, F.; Yochelis, S.; Porath, D.; Nevo, Y.; Shoseyov, O.; Paltiel, Y.; Plenio, M. B.

    2014-09-01

    The realization of scalable arrangements of nitrogen vacancy (NV) centers in diamond remains a key challenge on the way towards efficient quantum information processing, quantum simulation and quantum sensing applications. Although technologies based on implanting NV-centers in bulk diamond crystals or hybrid device approaches have been developed, they are limited by the achievable spatial resolution and by the intricate technological complexities involved in achieving scalability. We propose and demonstrate a novel approach for creating an arrangement of NV-centers, based on the self-assembling capabilities of biological systems and their beneficial nanometer spatial resolution. Here, a self-assembled protein structure serves as a structural scaffold for surface functionalized nanodiamonds, in this way allowing for the controlled creation of NV-structures on the nanoscale and providing a new avenue towards bridging the bio-nano interface. One-, two- as well as three-dimensional structures are within the scope of biological structural assembling techniques. We realized experimentally the formation of regular structures by interconnecting nanodiamonds using biological protein scaffolds. Based on the achievable NV-center distances of 11 nm, we evaluate the expected dipolar coupling interaction with neighboring NV-centers as well as the expected decoherence time. Moreover, by exploiting these couplings, we provide a detailed theoretical analysis on the viability of multiqubit quantum operations, suggest the possibility of individual addressing based on the random distribution of the NV intrinsic symmetry axes and address the challenges posed by decoherence and imperfect couplings. We then demonstrate in the last part that our scheme allows for the high-fidelity creation of entanglement, cluster states and quantum simulation applications.

  18. Growth of self-assembled (Ga)InAs/GaAs quantum dots and realization of high quality microcavities for experiments in the field of strong exciton photon coupling; Selbstorganisiertes Wachstum von (Ga)InAs/GaAs-Quantenpunkten und Entwicklung von Mikroresonatoren hoechster Guete fuer Experimente zur starken Exziton-Photon-Kopplung

    Energy Technology Data Exchange (ETDEWEB)

    Loeffler, Andreas

    2008-11-05

    At the beginning, we improved the three dimensional optical confinement of the micropillars. The quality factor of the pillars could be increased by the use of higher reflectivity mirrors and a matched V/III ratio for the different epitaxial layers. Hence, a record quality factor of about 90000 was achieved for an active micropillar with 26 (30) mirror pairs in the top (bottom) DBR and a diameter of 4 {mu}m. In parallel to this, we made studies on the growth of self-assembled GaInAs quantum dots on GaAs substrates. Here, the nucleation of three dimensional islands as well as their optical properties were object of the investigation. The morphological properties of the dots were analyzed by transmission and scanning electron microscopy, and the optical properties were investigated by photoluminescence and photoreflectance measurements. The optical and particularly the morphological properties of the self-assembled GaInAs quantum dots were essentially improved. Due to a low strain nucleation layer with an indium content of 30 %, the dot density could be reduced to 6-9 x 10{sup 9} cm{sup -2} and their geometric dimensions were increased to typical lengths between 50 and 100 nm and widths of about 30 nm. The lattice mismatch between the quantum dots and the surrounding matrix is decreased due to the reduced indium content. The minimized strain during the dot growth leads to an enhanced migration length of the deposited atoms on the surface. Finally, the obtained findings of the MBE growth of microcavities, their fabrication and the self-assembled island growth of GaInAs on GaAs were used for the realization of further samples. Low strain GaInAs quantum dots were embedded into the microresonators. These structures allowed for the first time the observation of strong coupling between light and matter in a semiconductor. In case of the low strain quantum dots with enlarged dimensions in the strong coupling regime, a vacuum Rabi-splitting of about 140 {mu}eV between the

  19. Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular beam epitaxy.

    Science.gov (United States)

    Cui, J; Lv, Y; Yang, X J; Fan, Y L; Zhong, Z; Jiang, Z M

    2011-03-25

    The size uniformity of self-assembled SiGe quantum rings, which are formed by capping SiGe quantum dots with a thin Si layer, is found to be greatly influenced by the growth temperature and the areal density of SiGe quantum dots. Higher growth temperature benefits the size uniformity of quantum dots, but results in low Ge concentration as well as asymmetric Ge distribution in the dots, which induces the subsequently formed quantum rings to be asymmetric in shape or even broken somewhere in the ridge of rings. Low growth temperature degrades the size uniformity of quantum dots, and thus that of quantum rings. A high areal density results in the expansion and coalescence of neighboring quantum dots to form a chain, rather than quantum rings. Uniform quantum rings with a size dispersion of 4.6% and an areal density of 7.8×10(8) cm(-2) are obtained at the optimized growth temperature of 640°C.

  20. Self-assembly of single "square" quantum rings in gold-free GaAs nanowires.

    Science.gov (United States)

    Zha, Guowei; Shang, Xiangjun; Su, Dan; Yu, Ying; Wei, Bin; Wang, Li; Li, Mifeng; Wang, Lijuan; Xu, Jianxing; Ni, Haiqiao; Ji, Yuan; Sun, Baoquan; Niu, Zhichuan

    2014-03-21

    Single nanostructures embedded within nanowires (NWs) represent one of the most promising technologies for applications in quantum photonics. However, fabrication imperfections and etching-induced defects are inevitable for top-down fabrications, whereas self-assembly bottom-up approaches cannot avoid the difficulties of its stochastic nature and are limited to restricted heterogeneous material systems. Here we demonstrate the versatile self-assembly of single "square" quantum rings (QR) on the sidewalls of gold-free GaAs NWs for the first time. By tuning the deposition temperature, As overpressure and amount of gallium-droplets, we were able to control the density and morphology of the structure, yielding novel single quantum dots, QR, coupled QRs, and nano-antidots. A proposed model based on a strain-driven, transport-dependent nucleation of gallium droplets at high temperature accounts for the formation mechanism of these structures. We achieved a single-QR-in-NW structure, of which the optical properties were analyzed using micro-photoluminescence at 10 K and a spatially resolved cathodoluminescence technique at 77 K. The spectra show sharp discrete peaks; of these peaks, the narrowest linewidth (separation) was 578 μeV (1-3 meV), reflecting the quantized nature of the ring-type electronic states.

  1. Self-assembled magnetic nitride dots on Cu(100) surfaces

    NARCIS (Netherlands)

    Gallego, JM; Grachev, SY; Passeggi, MCG; Sacharowitz, F; Ecija, D; Miranda, R; Boerma, DO

    We describe here a procedure for the direct fabrication of a self-organized, ordered pattern of Fe4N magnetic dots on an otherwise clean Cu(100) surface. It is based on the evaporation of Fe in a flux of atomic N produced by a plasma source onto a Cu(100) surface kept at 700 K. The large-scale

  2. PREFACE: Quantum Dot 2010

    Science.gov (United States)

    Taylor, Robert A.

    2010-09-01

    These conference proceedings contain the written papers of the contributions presented at Quantum Dot 2010 (QD2010). The conference was held in Nottingham, UK, on 26-30 April 2010. The conference addressed topics in research on: 1. Epitaxial quantum dots (including self-assembled and interface structures, dots defined by electrostatic gates etc): optical properties and electron transport quantum coherence effects spin phenomena optics of dots in cavities interaction with surface plasmons in metal/semiconductor structures opto-electronics applications 2. Novel QD structures: fabrication and physics of graphene dots, dots in nano-wires etc 3. Colloidal quantum dots: growth (shape control and hybrid nanocrystals such as metal/semiconductor, magnetic/semiconductor) assembly and surface functionalisation optical properties and spin dynamics electrical and magnetic properties applications (light emitting devices and solar cells, biological and medical applications, data storage, assemblers) The Editors Acknowledgements Conference Organising Committee: Maurice Skolnick (Chair) Alexander Tartakovskii (Programme Chair) Pavlos Lagoudakis (Programme Chair) Max Migliorato (Conference Secretary) Paola Borri (Publicity) Robert Taylor (Proceedings) Manus Hayne (Treasurer) Ray Murray (Sponsorship) Mohamed Henini (Local Organiser) International Advisory Committee: Yasuhiko Arakawa (Tokyo University, Japan) Manfred Bayer (Dortmund University, Germany) Sergey Gaponenko (Stepanov Institute of Physics, Minsk, Belarus) Pawel Hawrylak (NRC, Ottawa, Canada) Fritz Henneberger (Institute for Physics, Berlin, Germany) Atac Imamoglu (ETH, Zurich, Switzerland) Paul Koenraad (TU Eindhoven, Nethehrlands) Guglielmo Lanzani (Politecnico di Milano, Italy) Jungil Lee (Korea Institute of Science and Technology, Korea) Henri Mariette (CNRS-CEA, Grenoble, France) Lu Jeu Sham (San Diego, USA) Andrew Shields (Toshiba Research Europe, Cambridge, UK) Yoshihisa Yamamoto (Stanford University, USA) Artur

  3. Solid-state cavity quantum electrodynamics using quantum dots

    International Nuclear Information System (INIS)

    Gerard, J.M.; Gayral, B.; Moreau, E.; Robert, I.; Abram, I.

    2001-01-01

    We review the recent development of solid-state cavity quantum electrodynamics using single self-assembled InAs quantum dots and three-dimensional semiconductor microcavities. We discuss first prospects for observing a strong coupling regime for single quantum dots. We then demonstrate that the strong Purcell effect observed for single quantum dots in the weak coupling regime allows us to prepare emitted photons in a given state (the same spatial mode, the same polarization). We present finally the first single-mode solid-state source of single photons, based on an isolated quantum dot in a pillar microcavity. This optoelectronic device, the first ever to rely on a cavity quantum electrodynamics effect, exploits both Coulomb interaction between trapped carriers in a single quantum dot and single mode photon tunneling in the microcavity. (author)

  4. The electronic properties of semiconductor quantum dots

    International Nuclear Information System (INIS)

    Barker, J.A.

    2000-10-01

    This work is an investigation into the electronic behaviour of semiconductor quantum dots, particularly self-assembled quantum dot arrays. Processor-efficient models are developed to describe the electronic structure of dots, deriving analytic formulae for the strain tensor, piezoelectric distribution and diffusion- induced evolution of the confinement potential, for dots of arbitrary initial shape and composition profile. These models are then applied to experimental data. Transitions due to individual quantum dots have a narrow linewidth as a result of their discrete density of states. By contrast, quantum dot arrays exhibit inhomogeneous broadening which is generally attributed to size variations between the individual dots in the ensemble. Interpreting the results of double resonance spectroscopy, it is seen that variation in the indium composition of the nominally InAs dots is also present. This result also explains the otherwise confusing relationship between the spread in the ground-state and excited-state transition energies. Careful analysis shows that, in addition to the variations in size and composition, some other as yet unidentified broadening mechanism must also be present. The influence of rapid thermal annealing on dot electronic structure is also considered, finding that the experimentally observed blue-shift and narrowing of the photoluminescence linewidth may both be explained in terms of normal In/Ga interdiffusion. InAs/GaAs self-assembled quantum dots are commonly assumed to have a pyramidal geometry, so that we would expect the energy separation of the ground-state electron and hole levels in the dot to be largest at a positive applied field. This should also be the case for any dot of uniform composition whose shape tapers inwards from base to top, counter to the results of experimental Stark-shift spectroscopy which show a peak transition energy at a negative applied field. It is demonstrated that this inversion of the ground state

  5. Pressure dependence of photoluminescence of InAs/InP self-assembled quantum wires

    International Nuclear Information System (INIS)

    Ruiz-Castillo, M.; Segura, A.; Sans, J.A.; Martinez-Pastor, J.; Fuster, D.; Gonzalez, Y.; Gonzalez, L.

    2007-01-01

    This paper investigates the electronic structure of self-assembled InAs quantum wires (QWrs), grown under different conditions by molecular beam epitaxy on InP, by means of photoluminescence measurements under pressure. In samples with regularly distributed QWrs, room pressure photoluminescence spectra consist of a broad band centred at about 0.85 eV, which can be easily de-convoluted in a few Gaussian peaks. In samples with isolated QWrs, photoluminescence spectra exhibit up to four clearly resolved bands. Applying hydrostatic pressure, the whole emission band monotonously shifts towards higher photon energies with pressure coefficients ranging from 72 to 98 meV/GPa. In contrast to InAs quantum dots on GaAs, quantum wires photoluminescence is observed up to 10 GPa, indicating that InAs QWrs are metastable well above pressure at which bulk InAs undergoes a phase transition to the rock-salt phase (7 GPa). (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Coupled quantum dot-ring structures by droplet epitaxy

    International Nuclear Information System (INIS)

    Somaschini, C; Bietti, S; Koguchi, N; Sanguinetti, S

    2011-01-01

    The fabrication, by pure self-assembly, of GaAs/AlGaAs dot-ring quantum nanostructures is presented. The growth is performed via droplet epitaxy, which allows for the fine control, through As flux and substrate temperature, of the crystallization kinetics of nanometer scale metallic Ga reservoirs deposited on the surface. Such a procedure permits the combination of quantum dots and quantum rings into a single, multi-functional, complex quantum nanostructure.

  7. Electronic transient processes and optical spectra in quantum dots for quantum computing

    Czech Academy of Sciences Publication Activity Database

    Král, Karel; Zdeněk, Petr; Khás, Zdeněk

    2004-01-01

    Roč. 3, č. 1 (2004), s. 17-25 ISSN 1536-125X R&D Projects: GA AV ČR IAA1010113 Institutional research plan: CEZ:AV0Z1010914 Keywords : depopulation * electronic relaxation * optical spectra * quantum dots * self-assembled quantum dots * upconversion Subject RIV: BE - Theoretical Physics Impact factor: 3.176, year: 2004

  8. Spin storage in quantum dot ensembles and single quantum dots

    International Nuclear Information System (INIS)

    Heiss, Dominik

    2009-01-01

    This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T 1 =20 ms at B=4 T and T=1 K. A strong magnetic field dependence T 1 ∝B -5 has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T 1 ∝T -1 . The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T 1 h in the microsecond range, therefore, comparable with

  9. Spin storage in quantum dot ensembles and single quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Heiss, Dominik

    2009-10-15

    This thesis deals with the investigation of spin relaxation of electrons and holes in small ensembles of self-assembled quantum dots using optical techniques. Furthermore, a method to detect the spin orientation in a single quantum dot was developed in the framework of this thesis. A spin storage device was used to optically generate oriented electron spins in small frequency selected quantum dot ensembles using circularly polarized optical excitation. The spin orientation can be determined by the polarization of the time delayed electroluminescence signal generated by the device after a continuously variable storage time. The degree of spin polarized initialization was found to be limited to 0.6 at high magnetic fields, where anisotropic effects are compensated. The spin relaxation was directly measured as a function of magnetic field, lattice temperature and s-shell transition energy of the quantum dot by varying the spin storage time up to 30 ms. Very long spin lifetimes are obtained with a lower limit of T{sub 1}=20 ms at B=4 T and T=1 K. A strong magnetic field dependence T{sub 1}{proportional_to}B{sup -5} has been observed for low temperatures of T=1 K which weakens as the temperature is increased. In addition, the temperature dependence has been determined with T{sub 1}{proportional_to}T{sup -1}. The characteristic dependencies on magnetic field and temperature lead to the identification of the spin relaxation mechanism, which is governed by spin-orbit coupling and mediated by single phonon scattering. This finding is qualitatively supported by the energy dependent measurements. The investigations were extended to a modified device design that enabled studying the spin relaxation dynamics of heavy holes in self-assembled quantum dots. The measurements show a polarization memory effect for holes with up to 0.1 degree of polarization. Furthermore, investigations of the time dynamics of the hole spin relaxation reveal surprisingly long lifetimes T{sub 1}{sup h

  10. Quantum dot spectroscopy

    DEFF Research Database (Denmark)

    Leosson, Kristjan

    1999-01-01

    Semiconductor quantum dots ("solid state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution of...

  11. Quantum dot spectroscopy

    DEFF Research Database (Denmark)

    Leosson, Kristjan

    Semiconductor quantum dots ("solid-state atoms") are promising candidates for quantum computers and future electronic and optoelectronic devices. Quantum dots are zero-dimensional electronic systems and therefore have discrete energy levels, similar to atoms or molecules. The size distribution of...

  12. Large size self-assembled quantum rings: quantum size effect and modulation on the surface diffusion.

    Science.gov (United States)

    Tong, Cunzhu; Yoon, Soon Fatt; Wang, Lijun

    2012-09-24

    We demonstrate experimentally the submicron size self-assembled (SA) GaAs quantum rings (QRs) by quantum size effect (QSE). An ultrathin In0.1 Ga0.9As layer with different thickness is deposited on the GaAs to modulate the surface nucleus diffusion barrier, and then the SA QRs are grown. It is found that the density of QRs is affected significantly by the thickness of inserted In0.1 Ga0.9As, and the diffusion barrier modulation reflects mainly on the first five monolayer . The physical mechanism behind is discussed. The further analysis shows that about 160 meV decrease in diffusion barrier can be achieved, which allows the SA QRs with density of as low as one QR per 6 μm2. Finally, the QRs with diameters of 438 nm and outer diameters of 736 nm are fabricated using QSE.

  13. Optically Driven Spin Based Quantum Dots for Quantum Computing - Research Area 6 Physics 6.3.2

    Science.gov (United States)

    2015-12-15

    SECURITY CLASSIFICATION OF: This program conducted experimental and theoretical research aimed at developing an optically driven quantum dot quantum ...computer, where, the qubit is the spin of the electron trapped in a self-assembled quantum dot in InAs. Optical manipulation using the trion state...reports. In this reporting period, we discovered the nuclear spin quieting first discovered in 2008 is present in vertically coupled quantum dots but

  14. Synthesis of quantum dots

    Science.gov (United States)

    McDaniel, Hunter

    2017-10-17

    Common approaches to synthesizing alloyed quantum dots employ high-cost, air-sensitive phosphine complexes as the selenium precursor. Disclosed quantum dot synthesis embodiments avoid these hazardous and air-sensitive selenium precursors. Certain embodiments utilize a combination comprising a thiol and an amine that together reduce and complex the elemental selenium to form a highly reactive selenium precursor at room temperature. The same combination of thiol and amine acts as the reaction solvent, stabilizing ligand, and sulfur source in the synthesis of quantum dot cores. A non-injection approach may also be used. The optical properties of the quantum dots synthesized by this new approach can be finely tuned for a variety of applications by controlling size and/or composition of size and composition. Further, using the same approach, a shell can be grown around a quantum dot core that improves stability, luminescence efficiency, and may reduce toxicity.

  15. Quantum-Chemical Insights into the Self-Assembly of Carbon-Based Supramolecular Complexes

    Directory of Open Access Journals (Sweden)

    Joaquín Calbo

    2018-01-01

    Full Text Available Understanding how molecular systems self-assemble to form well-organized superstructures governed by noncovalent interactions is essential in the field of supramolecular chemistry. In the nanoscience context, the self-assembly of different carbon-based nanoforms (fullerenes, carbon nanotubes and graphene with, in general, electron-donor molecular systems, has received increasing attention as a means of generating potential candidates for technological applications. In these carbon-based systems, a deep characterization of the supramolecular organization is crucial to establish an intimate relation between supramolecular structure and functionality. Detailed structural information on the self-assembly of these carbon-based nanoforms is however not always accessible from experimental techniques. In this regard, quantum chemistry has demonstrated to be key to gain a deep insight into the supramolecular organization of molecular systems of high interest. In this review, we intend to highlight the fundamental role that quantum-chemical calculations can play to understand the supramolecular self-assembly of carbon-based nanoforms through a limited selection of supramolecular assemblies involving fullerene, fullerene fragments, nanotubes and graphene with several electron-rich π-conjugated systems.

  16. Transport in quantum dots

    International Nuclear Information System (INIS)

    Deus, Fernanda; Continetino, Mucio

    2011-01-01

    Full text. In this work we study the time dependent transport in interacting quantum dot. This is a zero-dimensional nano structure system which has quantized electronic states. In our purpose, we are interested in studying such system in a Coulomb blockade regime where a mean-field treatment of the electronic correlations are appropriate. The quantum dot is described by an Anderson type of Hamiltonian where the hybridization term arises from the contact with the leads. We consider a time dependence of both the energy of the localized state in the quantum dot and of the hybridization-like term. These time dependent parameters, under certain conditions, induce a current in the quantum dot even in the absence of difference on the chemical potential of the leads. The approach to this non-equilibrium problem requires the use of a Keldysh formalism. We calculate the non- equilibrium Green's functions and obtain results for the average (equilibrium term) and the non-equilibrium values of the electronic occupation number in the dot. we consider the possibility of a magnetic solution, with different values for the average up and down spins in the quantum dot. Our results allow to obtain, for instance, the tunneling current through the dot. The magnetic nature of the dot, for a certain range of parameters should give rise also to an induced spin current through the dot

  17. Modelling exciton–phonon interactions in optically driven quantum dots

    DEFF Research Database (Denmark)

    Nazir, Ahsan; McCutcheon, Dara

    2016-01-01

    We provide a self-contained review of master equation approaches to modelling phonon effects in optically driven self-assembled quantum dots. Coupling of the (quasi) two-level excitonic system to phonons leads to dissipation and dephasing, the rates of which depend on the excitation conditions...

  18. Dephasing in InAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang Werner; Mørk, Jesper

    1999-01-01

    The room-temperature dephasing in InAs/GaAs self-assembled quantum dots is measured using two independent methods: spectal-hole burning and four-wave mixing. Dephasing times weakly dependent on the excitation density are found, with a low density value of 290+/-80 fs from spectal-hole burning...

  19. Second-harmonic imaging of semiconductor quantum dots

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Bozhevolnyi, Sergey I.; Pedersen, Kjeld

    2000-01-01

    Resonant second-harmonic generation is observed at room temperature in reflection from self-assembled InAlGaAs quantum dots grown on a GaAs (001) substrate. The detected second-harmonic signal peaks at a pump wavelength of similar to 885 nm corresponding to the quantum-dot photoluminescence maximum....... In addition, the second-harmonic spectrum exhibits another smaller but well-pronounced peak at 765 nm not found in the linear experiments. We attribute this peak to the generation of second-harmonic radiation in the AlGaAs spacer layer enhanced by the local symmetry at the quantum-dot interface. We further...

  20. Phonon impact on optical control schemes of quantum dots: Role of quantum dot geometry and symmetry

    Science.gov (United States)

    Lüker, S.; Kuhn, T.; Reiter, D. E.

    2017-12-01

    Phonons strongly influence the optical control of semiconductor quantum dots. When modeling the electron-phonon interaction in several theoretical approaches, the quantum dot geometry is approximated by a spherical structure, though typical self-assembled quantum dots are strongly lens-shaped. By explicitly comparing simulations of a spherical and a lens-shaped dot using a well-established correlation expansion approach, we show that, indeed, lens-shaped dots can be exactly mapped to a spherical geometry when studying the phonon influence on the electronic system. We also give a recipe to reproduce spectral densities from more involved dots by rather simple spherical models. On the other hand, breaking the spherical symmetry has a pronounced impact on the spatiotemporal properties of the phonon dynamics. As an example we show that for a lens-shaped quantum dot, the phonon emission is strongly concentrated along the direction of the smallest axis of the dot, which is important for the use of phonons for the communication between different dots.

  1. Entangled exciton states in quantum dot molecules

    Science.gov (United States)

    Bayer, Manfred

    2002-03-01

    Currently there is strong interest in quantum information processing(See, for example, The Physics of Quantum Information, eds. D. Bouwmeester, A. Ekert and A. Zeilinger (Springer, Berlin, 2000).) in a solid state environment. Many approaches mimic atomic physics concepts in which semiconductor quantum dots are implemented as artificial atoms. An essential building block of a quantum processor is a gate which entangles the states of two quantum bits. Recently a pair of vertically aligned quantum dots has been suggested as optically driven quantum gate(P. Hawrylak, S. Fafard, and Z. R. Wasilewski, Cond. Matter News 7, 16 (1999).)(M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z.R. Wasilewski, O. Stern, and A. Forchel, Science 291, 451 (2001).): The quantum bits are individual carriers either on dot zero or dot one. The different dot indices play the same role as a "spin", therefore we call them "isospin". Quantum mechanical tunneling between the dots rotates the isospin and leads to superposition of these states. The quantum gate is built when two different particles, an electron and a hole, are created optically. The two particles form entangled isospin states. Here we present spectrocsopic studies of single self-assembled InAs/GaAs quantum dot molecules that support the feasibility of this proposal. The evolution of the excitonic recombination spectrum with varying separation between the dots allows us to demonstrate coherent tunneling of carriers across the separating barrier and the formation of entangled exciton states: Due to the coupling between the dots the exciton states show a splitting that increases with decreasing barrier width. For barrier widths below 5 nm it exceeds the thermal energy at room temperature. For a given barrier width, we find only small variations of the tunneling induced splitting demonstrating a good homogeneity within a molecule ensemble. The entanglement may be controlled by application of electromagnetic field. For

  2. A theoretical study of exciton energy levels in laterally coupled quantum dots

    International Nuclear Information System (INIS)

    Barticevic, Z; Pacheco, M; Duque, C A; Oliveira, L E

    2009-01-01

    A theoretical study of the electronic and optical properties of laterally coupled quantum dots, under applied magnetic fields perpendicular to the plane of the dots, is presented. The exciton energy levels of such laterally coupled quantum-dot systems, together with the corresponding wavefunctions and eigenvalues, are obtained in the effective-mass approximation by using an extended variational approach in which the magnetoexciton states are simultaneously obtained. One achieves the expected limits of one single quantum dot, when the distance between the dots is zero, and of two uncoupled quantum dots, when the distance between the dots is large enough. Moreover, present calculations-with appropriate structural dimensions of the two-dot system-are shown to be in agreement with measurements in self-assembled laterally aligned GaAs quantum-dot pairs and naturally/accidentally occurring coupled quantum dots in GaAs/GaAlAs quantum wells.

  3. Quantum dot molecules

    CERN Document Server

    Wu, Jiang

    2014-01-01

    This book reviews recent advances in the exciting and rapidly growing field of quantum dot molecules (QDMs). It offers state-of-the-art coverage of novel techniques and connects fundamental physical properties with device design.

  4. Graphene quantum dots

    CERN Document Server

    Güçlü, Alev Devrim; Korkusinski, Marek; Hawrylak, Pawel

    2014-01-01

    This book reflects the current status of theoretical and experimental research of graphene based nanostructures, in particular quantum dots, at a level accessible to young researchers, graduate students, experimentalists and theorists. It presents the current state of research of graphene quantum dots, a single or few monolayer thick islands of graphene. It introduces the reader to the electronic and optical properties of graphite, intercalated graphite and graphene, including Dirac fermions, Berry's phase associated with sublattices and valley degeneracy, covers single particle properties of

  5. Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate

    International Nuclear Information System (INIS)

    Bietti, S; Sanguinetti, S; Somaschini, C; Koguchi, N; Isella, G; Chrastina, D; Fedorov, A

    2009-01-01

    We present here the fabrication, via droplet epitaxy, of GaAs/AlGaAs quantum dots with high optical efficiency on Si. The growth substrate lattice parameter was adapted to that of (Al)GaAs via Ge virtual substrates (GeVS). The samples clearly show the presence of quantum dot self-assembly, with the designed shape and density. Photoluminescence measurements, performed at low temperature, show an intense emission band from the quantum dots.

  6. Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Leosson, Kristjan; Birkedal, Dan

    2002-01-01

    We report the effect of annealing on self-assembled InGaAs/GaAs quantum dots, as investigated by means of resonant photoluminescence (PL), resonant Raman scattering, polarization dependent PL, and high resolution X-ray diffraction....

  7. Quantum dot solar cells

    CERN Document Server

    Wu, Jiang

    2013-01-01

    The third generation of solar cells includes those based on semiconductor quantum dots. This sophisticated technology applies nanotechnology and quantum mechanics theory to enhance the performance of ordinary solar cells. Although a practical application of quantum dot solar cells has yet to be achieved, a large number of theoretical calculations and experimental studies have confirmed the potential for meeting the requirement for ultra-high conversion efficiency. In this book, high-profile scientists have contributed tutorial chapters that outline the methods used in and the results of variou

  8. Exciton dephasing in single InGaAs quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

    2000-01-01

    The homogeneous linewidth of excitonic transitions is a parameter of fundamental physical importance. In self-assembled quantum dot systems, a strong inhomogeneous broadening due to dot size fluctuations masks the homogeneous linewidth associated with transitions between individual states....... The homogeneous and inhomogeneous broadening of InGaAs quantum dot luminescence is of central importance for the potential application of this material system in optoelectronic devices. Recent measurements of MOCVD-grown InAs/InGaAs quantum dots indicate a large homogeneous broadening at room temperature due...... to fast dephasing. We present an investigation of the low-temperature homogeneous linewidth of individual PL lines from MBE-grown In0.5Ga0.5As/GaAs quantum dots....

  9. Quantum optics with single quantum dot devices

    International Nuclear Information System (INIS)

    Zwiller, Valery; Aichele, Thomas; Benson, Oliver

    2004-01-01

    A single radiative transition in a single-quantum emitter results in the emission of a single photon. Single quantum dots are single-quantum emitters with all the requirements to generate single photons at visible and near-infrared wavelengths. It is also possible to generate more than single photons with single quantum dots. In this paper we show that single quantum dots can be used to generate non-classical states of light, from single photons to photon triplets. Advanced solid state structures can be fabricated with single quantum dots as their active region. We also show results obtained on devices based on single quantum dots

  10. Hexagonal graphene quantum dots

    KAUST Repository

    Ghosh, Sumit; Schwingenschlö gl, Udo

    2016-01-01

    We study hexagonal graphene quantum dots, using density functional theory, to obtain a quantitative description of the electronic properties and their size dependence, considering disk and ring geometries with both armchair and zigzag edges. We show that the electronic properties of quantum dots with armchair edges are more sensitive to structural details than those with zigzag edges. As functions of the inner and outer radii, we find in the case of armchair edges that the size of the band gap follows distinct branches, while in the case of zigzag edges it changes monotonically. This behaviour is further analyzed by studying the ground state wave function and explained in terms of its localisation.

  11. Hexagonal graphene quantum dots

    KAUST Repository

    Ghosh, Sumit

    2016-12-05

    We study hexagonal graphene quantum dots, using density functional theory, to obtain a quantitative description of the electronic properties and their size dependence, considering disk and ring geometries with both armchair and zigzag edges. We show that the electronic properties of quantum dots with armchair edges are more sensitive to structural details than those with zigzag edges. As functions of the inner and outer radii, we find in the case of armchair edges that the size of the band gap follows distinct branches, while in the case of zigzag edges it changes monotonically. This behaviour is further analyzed by studying the ground state wave function and explained in terms of its localisation.

  12. Spin interactions in InAs quantum dots

    Science.gov (United States)

    Doty, M. F.; Ware, M. E.; Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

    2006-03-01

    Fine structure splittings in optical spectra of self-assembled InAs quantum dots (QDs) generally arise from spin interactions between particles confined in the dots. We present experimental studies of the fine structure that arises from multiple charges confined in a single dot [1] or in molecular orbitals of coupled pairs of dots. To probe the underlying spin interactions we inject particles with a known spin orientation (by using polarized light to perform photoluminescence excitation spectroscopy experiments) or use a magnetic field to orient and/or mix the spin states. We develop a model of the spin interactions that aids in the development of quantum information processing applications based on controllable interactions between spins confined to QDs. [1] Polarized Fine Structure in the Photoluminescence Excitation Spectrum of a Negatively Charged Quantum Dot, Phys. Rev. Lett. 95, 177403 (2005)

  13. A fabrication guide for planar silicon quantum dot heterostructures

    Science.gov (United States)

    Spruijtenburg, Paul C.; Amitonov, Sergey V.; van der Wiel, Wilfred G.; Zwanenburg, Floris A.

    2018-04-01

    We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrinsic material properties, interfaces and fabrication processes plays a crucial role in the formation of electrostatically defined quantum dots. Processes such as oxidation, physical vapor deposition and atomic-layer deposition must be tailored in order to prevent unwanted side effects such as defects, disorder and dewetting. In two directly related manuscripts written in parallel we use techniques described in this work to create depletion-mode quantum dots in intrinsic silicon, and low-disorder silicon quantum dots defined with palladium gates. While we discuss three different planar gate structures, the general principles also apply to 0D and 1D systems, such as self-assembled islands and nanowires.

  14. Nanocrystal quantum dots

    CERN Document Server

    Klimov, Victor I

    2010-01-01

    ""Soft"" Chemical Synthesis and Manipulation of Semiconductor Nanocrystals, J.A. Hollingsworth and V.I. Klimov Electronic Structure in Semiconductor Nanocrystals: Optical Experiment, D.J. NorrisFine Structure and Polarization Properties of Band-Edge Excitons in Semiconductor Nanocrystals, A.L. EfrosIntraband Spectroscopy and Dynamics of Colloidal Semiconductor Quantum Dots, P. Guyot-Sionnest, M. Shim, and C. WangMultiexciton Phenomena in Semiconductor Nanocrystals, V.I. KlimovOptical Dynamics in Single Semiconductor Quantum Do

  15. Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide

    DEFF Research Database (Denmark)

    Fiore, A.; Oesterle, U.; Stanley, R.P.

    2001-01-01

    We present a comprehensive study of the structural and emission properties of self-assembled InAs quantum dots emitting at 1.3 mum. The dots are grown by molecular beam epitaxy on gallium arsenide substrates. Room-temperature emission at 1.3 mum is obtained by embedding the dots in an InGaAs layer...

  16. Quantum Dot Photonics

    Science.gov (United States)

    Kinnischtzke, Laura A.

    We report on several experiments using single excitons confined to single semiconductor quantum dots (QDs). Electric and magnetic fields have previously been used as experimental knobs to understand and control individual excitons in single quantum dots. We realize new ways of electric field control by changing materials and device geometry in the first two experiments with strain-based InAs QDs. A standard Schottky diode heterostructure is demonstrated with graphene as the Schottky gate material, and its performance is bench-marked against a diode with a standard gate material, semi-transparent nickel-chromium (NiCr). This change of materials increases the photon collection rate by eliminating absorption in the metallic NiCr layer. A second set of experiments investigates the electric field response of QDs as a possible metrology source. A linear voltage potential drop in a plane near the QDs is used to describe how the spatially varying voltage profile is also imparted on the QDs. We demonstrate a procedure to map this voltage profile as a preliminary route towards a full quantum sensor array. Lastly, InAs QDs are explored as potential spin-photon interfaces. We describe how a magnetic field is used to realize a reversible exchange of information between light and matter, including a discussion of the polarization-dependence of the photoluminesence, and how that can be linked to the spin of a resident electron or hole. We present evidence of this in two wavelength regimes for InAs quantum dots, and discuss how an external magnetic field informs the spin physics of these 2-level systems. This thesis concludes with the discovery of a new class of quantum dots. As-yet unidentified defect states in single layer tungsten diselenide (WSe 2 ) are shown to host quantum light emission. We explore the spatial extent of electron confinement and tentatively identify a radiative lifetime of 1 ns for these single photon emitters.

  17. Quantum dots and nanocomposites.

    Science.gov (United States)

    Mansur, Herman Sander

    2010-01-01

    Quantum dots (QDs), also known as semiconducting nanoparticles, are promising zero-dimensional advanced materials because of their nanoscale size and because they can be engineered to suit particular applications such as nonlinear optical devices (NLO), electro-optical devices, and computing applications. QDs can be joined to polymers in order to produce nanocomposites which can be considered a scientific revolution of the 21st century. One of the fastest moving and most exciting interfaces of nanotechnology is the use of QDs in medicine, cell and molecular biology. Recent advances in nanomaterials have produced a new class of markers and probes by conjugating semiconductor QDs with biomolecules that have affinities for binding with selected biological structures. The nanoscale of QDs ensures that they do not scatter light at visible or longer wavelengths, which is important in order to minimize optical losses in practical applications. Moreover, at this scale, quantum confinement and surface effects become very important and therefore manipulation of the dot diameter or modification of its surface allows the properties of the dot to be controlled. Quantum confinement affects the absorption and emission of photons from the dot. Thus, the absorption edge of a material can be tuned by control of the particle size. This paper reviews developments in the myriad of possibilities for the use of semiconductor QDs associated with molecules producing novel hybrid nanocomposite systems for nanomedicine and bioengineering applications.

  18. GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process

    International Nuclear Information System (INIS)

    Nevedomskii, V. N.; Bert, N. A.; Chaldyshev, V. V.; Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R.

    2009-01-01

    Epitaxial GaAs layers containing InAs semiconductor quantum dots and As metal quantum dots are grown by molecular beam epitaxy. The InAs quantum dots are formed by the Stranskii-Krastanow mechanism, whereas the As quantum dots are self-assembled in the GaAs layer grown at low temperature with a large As excess. The microstructure of the samples is studied by transmission electron microscopy. It is established that the As metal quantum dots formed in the immediate vicinity of the InAs semiconductor quantum dots are larger in size than the As quantum dots formed far from the InAs quantum dots. This is apparently due to the effect of strain fields of the InAs quantum dots upon the self-assembling of As quantum dots. Another phenomenon apparently associated with local strains around the InAs quantum dots is the formation of V-like defects (stacking faults) during the overgrowth of the InAs quantum dots with the GaAs layer by low-temperature molecular beam epitaxy. Such defects have a profound effect on the self-assembling of As quantum dots. Specifically, on high-temperature annealing needed for the formation of large-sized As quantum dots by Ostwald ripening, the V-like defects bring about the dissolution of the As quantum dots in the vicinity of the defects. In this case, excess arsenic most probably diffuses towards the open surface of the sample via the channels of accelerated diffusion in the planes of stacking faults.

  19. Optical manipulation of electron spin in quantum dot systems

    Science.gov (United States)

    Villas-Boas, Jose; Ulloa, Sergio; Govorov, Alexander

    2006-03-01

    Self-assembled quantum dots (QDs) are of particular interest for fundamental physics because of their similarity with atoms. Coupling two of such dots and addressing them with polarized laser light pulses is perhaps even more interesting. In this paper we use a multi-exciton density matrix formalism to model the spin dynamics of a system with single or double layers of QDs. Our model includes the anisotropic electron-hole exchange in the dots, the presence of wetting layer states, and interdot tunneling [1]. Our results show that it is possible to switch the spin polarization of a single self-assembled quantum dot under elliptically polarized light by increasing the laser intensity. In the nonlinear mechanism described here, intense elliptically polarized light creates an effective exchange channel between the exciton spin states through biexciton states, as we demonstrate by numerical and analytical methods. We further show that the effect persists in realistic ensembles of dots, and we propose alternative ways to detect it. We also extend our study to a double layer of quantum dots, where we find a competition between Rabi frequency and tunneling oscillations. [1] J. M. Villas-Boas, S. E. Ulloa, and A. O. Govorov, Phys. Rev. Lett. 94, 057404 (2005); Phys. Rev. B 69, 125342 (2004).

  20. Nuclear magnetic resonance on a single quantum dot and a quantum dot in a nanowire system: quantum photonics and opto-mechanical coupling

    OpenAIRE

    Wüst, Gunter Johannes

    2015-01-01

    Self-assembled semiconductor quantum dots (QD) are excellent single photon sources and possible hosts for electron spin qubits, which can be initialized, manipulated and read-out optically. The nuclear spins in nano-structured semiconductors play a central role in quantum applications. The nuclear spins represent a useful resource for generating local magnetic fields but nuclear spin noise represents a major source of dephasing for spin qubits. Controlling the nuclear spins enhances the resou...

  1. Silicon quantum dots: surface matters

    Czech Academy of Sciences Publication Activity Database

    Dohnalová, K.; Gregorkiewicz, T.; Kůsová, Kateřina

    2014-01-01

    Roč. 26, č. 17 (2014), 1-28 ISSN 0953-8984 R&D Projects: GA ČR GPP204/12/P235 Institutional support: RVO:68378271 Keywords : silicon quantum dots * quantum dot * surface chemistry * quantum confinement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.346, year: 2014

  2. Quantum dot solar cell

    International Nuclear Information System (INIS)

    Ahamefula, U.C.; Sulaiman, M.Y.; Sopian, K.; Ibarahim, Z.; Ibrahim, N.; Alghoul, M.A.; Haw, L.C.; Yahya, M.; Amin, N.; Mat, S.; Ruslan, M.H.

    2009-01-01

    Full text: The much awaited desire of replacing fossil fuel with photovoltaic will remain a fairy tale if the myriad of issues facing solar cell development are marginalized. Foremost in the list is the issue of cost. Silicon has reached a stage where its use on large scale can no longer be lavishly depended upon. The demand for high grade silicon from the microelectronics and solar industries has soared leading to scarcity. New approach has to be sought. Notable is the increased attention on thin films such as cadmium telluride, copper indium gallium diselenide, amorphous silicon, and the not so thin non-crystalline family of silicon. While efforts to address the issues of stability, toxicity and efficiency of these systems are ongoing, another novel approach is quietly making its appearance - quantum dots. Quantum dots seem to be promising candidates for solar cells because of the opportunity to manipulate their energy levels allowing absorption of a wider solar spectrum. Utilization of minute quantity of these nano structures is enough to bring the cost of solar cell down and to ascertain sustainable supply of useful material. The paper outlines the progress that has been made on quantum dot solar cells. (author)

  3. Kinetic Monte Carlo simulation of growth of Ge quantum dot multilayers with amorphous matrix

    Energy Technology Data Exchange (ETDEWEB)

    Endres, Jan, E-mail: endres.jan@gmail.com; Holý, Václav; Daniš, Stanislav [Charles University, Faculty of Mathematics and Physics (Czech Republic); Buljan, Maja [Ruđer Bošković Institute (Croatia)

    2017-04-15

    Kinetic Monte Carlo method is used to simulate the growth of germanium quantum dot multilayers with amorphous matrix. We modified a model for self-assembled growth of quantum dots in crystalline matrix for the case of the amorphous one. The surface morphology given as hills above the buried dots is the main driving force for the ordering of the quantum dots. In the simulations, we observed a short-range self-ordering in the lateral direction. The ordering in lateral and vertical direction depends strongly on the surface morphology, mostly on the strength how the deposited material replicates previous surfaces.

  4. Quantum dots for quantum information technologies

    CERN Document Server

    2017-01-01

    This book highlights the most recent developments in quantum dot spin physics and the generation of deterministic superior non-classical light states with quantum dots. In particular, it addresses single quantum dot spin manipulation, spin-photon entanglement and the generation of single-photon and entangled photon pair states with nearly ideal properties. The role of semiconductor microcavities, nanophotonic interfaces as well as quantum photonic integrated circuits is emphasized. The latest theoretical and experimental studies of phonon-dressed light matter interaction, single-dot lasing and resonance fluorescence in QD cavity systems are also provided. The book is written by the leading experts in the field.

  5. GaN quantum dots: from basic understanding to unique applications

    International Nuclear Information System (INIS)

    Pelekanos, N T; Dialynas, G E; Simon, J; Mariette, H; Daudin, B

    2005-01-01

    The GaN self-assembled quantum dots constitute a very special and intriguing type of semiconductor nanostructure, mainly because they carry in their structure a giant internal electric field that can reach a value up to 7 MV/cm. In this report, we review the most important structural and optical properties of GaN quantum dots, and we discuss their advantages and limitations for blue-UV optoelectronic applications. (invited paper)

  6. Room-Temperature Dephasing in InAs Quantum Dots

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Mørk, Jesper

    2000-01-01

    The room temperature dephasing in InAs/InGaAs/GaAs self-assembled quantum dots, embedded in a waveguide for laser applications, is measured using two independent methods: spectral hole burning and four-wave mixing. Without the application of bias current for electrical carrier injection......, a dephasing time of ~260 fs, weakly dependent on the optical excitation density, is found and attributed to phonon interaction. The application of bias current, leading to population inversion in the dot ground state and optical gain, strongly decreases the dephasing time to less than 50 fs, likely due...

  7. Phosphorene quantum dots

    Science.gov (United States)

    Vishnoi, Pratap; Mazumder, Madhulika; Barua, Manaswee; Pati, Swapan K.; Rao, C. N. R.

    2018-05-01

    Phosphorene, a two-dimensional material, has been a subject of recent investigations. In the present study, we have prepared blue fluorescent phosphorene quantum dots (PQDs) by liquid phase exfoliation of black phosphorus in two non-polar solvents, toluene and mesitylene. The average particle sizes of PQDs decrease from 5.0 to 1.0 nm on increasing the sonicator power from 150 to 225 W. The photoluminescence spectrum of the PQDs is red-shifted in the 395-470 nm range on increasing the excitation-wavelength from 300 to 480 nm. Electron donor and acceptor molecules quench the photoluminescence, with the acceptors showing more marked effects.

  8. Isolated self-assembled InAs/InP(001) quantum wires obtained by controlling the growth front evolution

    International Nuclear Information System (INIS)

    Fuster, David; Alen, Benito; Gonzalez, Luisa; Gonzalez, Yolanda; Martinez-Pastor, Juan; Gonzalez, Maria Ujue; GarcIa, Jorge M

    2007-01-01

    In this work we explore the first stages of quantum wire (QWR) formation studying the evolution of the growth front for InAs coverages below the critical thickness, θ c , determined by reflection high energy electron diffraction (RHEED). Our results obtained by in situ measurement of the accumulated stress evolution during InAs growth on InP(001) show that the relaxation process starts at a certain InAs coverage θ R c . At this θ R , the spontaneous formation of isolated quantum wires takes place. For θ>θ R this ensemble of isolated nanostructures progressively evolves towards QWRs that cover the whole surface for θ θ c . These results allow for a better understanding of the self-assembling process of QWRs and enable the study of the individual properties of InAs/InP self-assembled single quantum wires

  9. Graphene based quantum dots.

    Science.gov (United States)

    Zhang, H G; Hu, H; Pan, Y; Mao, J H; Gao, M; Guo, H M; Du, S X; Greber, T; Gao, H-J

    2010-08-04

    Laterally localized electronic states are identified on a single layer of graphene on ruthenium by low temperature scanning tunneling spectroscopy (STS). The individual states are separated by 3 nm and comprise regions of about 90 carbon atoms. This constitutes a highly regular quantum dot-array with molecular precision. It is evidenced by quantum well resonances (QWRs) with energies that relate to the corrugation of the graphene layer. The dI/dV conductance spectra are modeled by a layer height dependent potential-well with a delta-function potential that describes the barrier for electron penetration into graphene. The resulting QWRs are strongest and lowest in energy on the isolated 'hill' regions with a diameter of 2 nm, where the graphene is decoupled from the surface.

  10. Modeling of phonon- and Coulomb-mediated capture processes in quantum dots

    DEFF Research Database (Denmark)

    Magnúsdóttir, Ingibjörg

    2003-01-01

    This thesis describes modeling of carrier relaxation processes in self-assembled quantum-dot-structures, with particular emphasis on carrier capture processes in quantum dots. Relaxation by emission of lontitudinal optical (LO) phonons is very efficient in bulk semiconductors and nanostructures...... of higher dimensionality. Here, we investigate carrier capture processes into quantum dots, mediated by emission of one and two LO phonons. In these investigations is is assumed that the dot is empty initially. In the Case of single-phonon capture we also investigate the influence of the presence...... of a charge in the quantum-dot state to which the capture takes place. In general, capture rates are of the same order as capture rates into an empty dot state, but in some cases the dot-size interval for which the capture process is energetically allowed, is considerably reduced.The above calculations...

  11. Temperature-Dependent Mollow Triplet Spectra from a Single Quantum Dot: Rabi Frequency Renormalization and Sideband Linewidth Insensitivity

    DEFF Research Database (Denmark)

    Wei, Yu-Jia; He, Yu; He, Yu-Ming

    2014-01-01

    We investigate temperature-dependent resonance fluorescence spectra obtained from a single self- assembled quantum dot. A decrease of the Mollow triplet sideband splitting is observed with increasing temperature, an effect we attribute to a phonon-induced renormalization of the driven dot Rabi fr...

  12. Shape analysis of single and stacked InAs quantum dots at the atomic level by cross-sectional STM

    NARCIS (Netherlands)

    Bruls, D.M.; Vugs, J.W.A.M.; Koenraad, P.M.; Skolnick, M.S.; Hopkinson, M.; Wolter, J.H.; Miura, N.; Ando, T.

    2001-01-01

    We present a study of InAs self-assembled quantum dots in GaAs by cross-sectional scanning tunneling microscopy (X-STM). Our results shows that the dots consist of an JnGaAs alloy and that the indium content increases towards the top. The analysis of the height versus base length relation obtained

  13. Quadra-Quantum Dots and Related Patterns of Quantum Dot Molecules: Basic Nanostructures for Quantum Dot Cellular Automata Application

    Directory of Open Access Journals (Sweden)

    Somsak Panyakeow

    2010-10-01

    Full Text Available Laterally close-packed quantum dots (QDs called quantum dot molecules (QDMs are grown by modified molecular beam epitaxy (MBE. Quantum dots could be aligned and cross hatched. Quantum rings (QRs created from quantum dot transformation during thin or partial capping are used as templates for the formations of bi-quantum dot molecules (Bi-QDMs and quantum dot rings (QDRs. Preferable quantum dot nanostructure for quantum computation based on quantum dot cellular automata (QCA is laterally close-packed quantum dot molecules having four quantum dots at the corners of square configuration. These four quantum dot sets are called quadra-quantum dots (QQDs. Aligned quadra-quantum dots with two electron confinements work like a wire for digital information transmission by Coulomb repulsion force, which is fast and consumes little power. Combination of quadra-quantum dots in line and their cross-over works as logic gates and memory bits. Molecular Beam Epitaxial growth technique called 'Droplet Epitaxy' has been developed for several quantum nanostructures such as quantum rings and quantum dot rings. Quantum rings are prepared by using 20 ML In-Ga (15:85 droplets deposited on a GaAs substrate at 390'C with a droplet growth rate of 1ML/s. Arsenic flux (7'8'10-6Torr is then exposed for InGaAs crystallization at 200'C for 5 min. During droplet epitaxy at a high droplet thickness and high temperature, out-diffusion from the centre of droplets occurs under anisotropic strain. This leads to quantum ring structures having non-uniform ring stripes and deep square-shaped nanoholes. Using these peculiar quantum rings as templates, four quantum dots situated at the corners of a square shape are regrown. Two of these four quantum dots are aligned either or, which are preferable crystallographic directions of quantum dot alignment in general.

  14. Silicon Quantum Dots for Quantum Information Processing

    Science.gov (United States)

    2013-11-01

    S. Lai, C. Tahan, A. Morello and A. S. Dzurak, Electron Spin lifetimes in multi-valley sil- icon quantum dots, S3NANO Winter School Few spin solid...lifetimes in multi-valley sil- icon quantum dots, International Workshop on Silicon Quantum Electronics, Grenoble, France, February 2012 (Poster). C...typically plunger gates), PMMA A5 is spun at 5000 rpm for 30 seconds, resulting in a 280 nm resist thickness. The resists are baked for 90 seconds at 180

  15. Electrical control of single hole spins in nanowire quantum dots.

    Science.gov (United States)

    Pribiag, V S; Nadj-Perge, S; Frolov, S M; van den Berg, J W G; van Weperen, I; Plissard, S R; Bakkers, E P A M; Kouwenhoven, L P

    2013-03-01

    The development of viable quantum computation devices will require the ability to preserve the coherence of quantum bits (qubits). Single electron spins in semiconductor quantum dots are a versatile platform for quantum information processing, but controlling decoherence remains a considerable challenge. Hole spins in III-V semiconductors have unique properties, such as a strong spin-orbit interaction and weak coupling to nuclear spins, and therefore, have the potential for enhanced spin control and longer coherence times. A weaker hyperfine interaction has previously been reported in self-assembled quantum dots using quantum optics techniques, but the development of hole-spin-based electronic devices in conventional III-V heterostructures has been limited by fabrication challenges. Here, we show that gate-tunable hole quantum dots can be formed in InSb nanowires and used to demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tunable between hole and electron quantum dots, which allows the hyperfine interaction strengths, g-factors and spin blockade anisotropies to be compared directly in the two regimes.

  16. Experimental demonstration of highly anisotropic decay rates of single quantum dots inside photonic crystals

    DEFF Research Database (Denmark)

    Wang, Qin; Stobbe, Søren; Nielsen, Henri Thyrrestrup

    We have systematically measured the variation of the spontaneous emission rate with polarization for self-assembled single quantum dots in two-dimensional photonic crystal membranes and obtained a maximum anisotropy factor of 6 between the decay rates of the two nondegenerate bright exciton states....

  17. Tunable self-assembled spin chains of strongly interacting cold atoms for demonstration of reliable quantum state transfer

    DEFF Research Database (Denmark)

    Loft, N. J. S.; Marchukov, O. V.; Petrosyan, D.

    2016-01-01

    We have developed an efficient computational method to treat long, one-dimensional systems of strongly-interacting atoms forming self-assembled spin chains. Such systems can be used to realize many spin chain model Hamiltonians tunable by the external confining potential. As a concrete...... demonstration, we consider quantum state transfer in a Heisenberg spin chain and we show how to determine the confining potential in order to obtain nearly-perfect state transfer....

  18. Quantum dots: Rethinking the electronics

    Energy Technology Data Exchange (ETDEWEB)

    Bishnoi, Dimple [Department of Physics, S. S. Jain Subodh PG College, Jaipur, Rajasthan Pin-302004 (India)

    2016-05-06

    In this paper, we demonstrate theoretically that the Quantum dots are quite interesting for the electronics industry. Semiconductor quantum dots (QDs) are nanometer-scale crystals, which have unique photo physical, quantum electrical properties, size-dependent optical properties, There small size means that electrons do not have to travel as far as with larger particles, thus electronic devices can operate faster. Cheaper than modern commercial solar cells while making use of a wider variety of photon energies, including “waste heat” from the sun’s energy. Quantum dots can be used in tandem cells, which are multi junction photovoltaic cells or in the intermediate band setup. PbSe (lead selenide) is commonly used in quantum dot solar cells.

  19. Characterization of multilayer self-organized InAs quantum dot embedded waveguides at 1.3 and 1.5 μm

    NARCIS (Netherlands)

    Akca, I.B.; Dana, A.; Aydinli, A.; Rossetti, M.; Li, L.; Fiore, A.; Dagli, N.

    2007-01-01

    In this paper, we characterized the electro-optic coefficient and loss of multilayer InAs quantum dot laser structures at 1309 and 1515 nm. Quantum dot waveguides were grown by molecular beam epitaxy, where the active region is formed by three or five layers of self-assembled InAs QDs. Loss

  20. The influence of post-growth annealing on the optical properties of InAs quantum dot chains grown on pre-patterned GaAs(100)

    International Nuclear Information System (INIS)

    Hakkarainen, T V; Polojärvi, V; Schramm, A; Tommila, J; Guina, M

    2012-01-01

    We report on the effect of post-growth thermal annealing of [011]-, [01 1-bar ]-, and [010]-oriented quantum dot chains grown by molecular beam epitaxy on GaAs(100) substrates patterned by UV-nanoimprint lithography. We show that the quantum dot chains experience a blueshift of the photoluminescence energy, spectral narrowing, and a reduction of the intersubband energy separation during annealing. The photoluminescence blueshift is more rapid for the quantum dot chains than for self-assembled quantum dots that were used as a reference. Furthermore, we studied polarization resolved photoluminescence and observed that annealing reduces the intrinsic optical anisotropy of the quantum dot chains and the self-assembled quantum dots. (paper)

  1. Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers.

    Science.gov (United States)

    Su, Xiang-Bin; Ding, Ying; Ma, Ben; Zhang, Ke-Lu; Chen, Ze-Sheng; Li, Jing-Lun; Cui, Xiao-Ran; Xu, Ying-Qiang; Ni, Hai-Qiao; Niu, Zhi-Chuan

    2018-02-21

    The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of growing high-density InAs/GaAs quantum dots, bimodal size occurs due to large mismatch and other factors. The bimodal size in the InAs/GaAs quantum dot system is eliminated by the method of high-temperature annealing and optimized the in situ annealing temperature. The annealing temperature is taken as the key optimization parameters, and the optimal annealing temperature of 680 °C was obtained. In this process, quantum dot growth temperature, InAs deposition, and arsenic (As) pressure are optimized to improve quantum dot quality and emission wavelength. A 1.3-μm high-performance F-P quantum dot laser with a threshold current density of 110 A/cm 2 was demonstrated.

  2. Optical Rabi Oscillations in a Quantum Dot Ensemble

    Science.gov (United States)

    Kujiraoka, Mamiko; Ishi-Hayase, Junko; Akahane, Kouichi; Yamamoto, Naokatsu; Ema, Kazuhiro; Sasaki, Masahide

    2010-09-01

    We have investigated Rabi oscillations of exciton polarization in a self-assembled InAs quantum dot ensemble. The four-wave mixing signals measured as a function of the average of the pulse area showed the large in-plane anisotropy and nonharmonic oscillations. The experimental results can be well reproduced by a two-level model calculation including three types of inhomogeneities without any fitting parameter. The large anisotropy can be well explained by the anisotropic dipole moments. We also find that the nonharmonic behaviors partly originate from the polarization interference.

  3. Second-harmonic scanning optical microscopy of semiconductor quantum dots

    DEFF Research Database (Denmark)

    Vohnsen, B.; Bozhevolnyi, S.I.; Pedersen, K.

    2001-01-01

    Second-harmonic (SH) optical imaging of self-assembled InAlGaAs quantum dots (QD's) grown on a GaAs(0 0 1) substrate has been accomplished at room temperature by use of respectively a scanning far-field optical microscope in reflection mode and a scanning near-field optical microscope...... in transmission mode. In both cases the SH signal peaks at a pump wavelength of similar to 885 nm in correspondence to the maximum in the photoluminescence spectrum of the QD sample. SH near-field optical images exhibit spatial signal variations on a subwavelength scale that depend on the pump wavelength. We...

  4. InN Quantum Dot Based Infra-Red Photodetectors.

    Science.gov (United States)

    Shetty, Arjun; Kumar, Mahesh; Roull, Basanta; Vinoy, K J; Krupanidhj, S B

    2016-01-01

    Self-assembled InN quantum dots (QDs) were grown on Si(111) substrate using plasma assisted molecular beam epitaxy (PA-MBE). Single-crystalline wurtzite structure of InN QDs was confirmed by X-ray diffraction. The dot densities were varied by varying the indium flux. Variation of dot density was confirmed by FESEM images. Interdigitated electrodes were fabricated using standard lithog- raphy steps to form metal-semiconductor-metal (MSM) photodetector devices. The devices show strong infrared response. It was found that the samples with higher density of InN QDs showed lower dark current and higher photo current. An explanation was provided for the observations and the experimental results were validated using Silvaco Atlas device simulator.

  5. Shape, strain, and ordering of lateral InAs quantum dot molecules

    International Nuclear Information System (INIS)

    Krause, B.; Metzger, T.H.; Rastelli, A.; Songmuang, R.; Kiravittaya, S.; Schmidt, O. G.

    2005-01-01

    The results of an x-ray study on freestanding, self-assembled InAs/GaAs quantum dots grown by molecular beam epitaxy are presented. The studied samples cover the range from statistically distributed single quantum dots to quantum dot bimolecules, and finally to quantum dot quadmolecules. The x-ray diffraction data of the single quantum dots and the bimolecules, obtained in grazing incidence geometry, have been analyzed using the isostrain model. An extended version of the isostrain model has been developed, including the lateral arrangement of the quantum dots within a quantum dot molecule and the superposition of the scattering from different parts of the dots. This model has been applied to the scattering maps of all three samples. Quantitative information about the positions of the dots, the shape, and the lattice parameter distribution of their crystalline core has been obtained. For the single dot and the bimolecule, a strong similarity of the shape and lattice parameter distribution has been found, in agreement with the similarity of their photoluminescence spectra

  6. From quantum dots to quantum circuits

    International Nuclear Information System (INIS)

    Ensslin, K.

    2008-01-01

    Full text: Quantum dots, or artificial atoms, confine charge carriers in three-dimensional islands in a semiconductor environment. Detailed understanding and exquisite control of the charge and spin state of the electrically tunable charge occupancy have been demonstrated over the years. Quantum dots with best quality for transport experiments are usually realized in n-type AlGaAs/GaAs heterostructures. Novel material systems, such as graphene, nanowires and p-type heterostructures offer unexplored parameter regimes in view of spin-orbit interactions, carrier-carrier interactions and hyperfine coupling between electron and nuclear spins, which might be relevant for future spin qubits realized in quantum dots. With more sophisticated nanotechnology it has become possible to fabricate coupled quantum systems where classical and quantum mechanical coupling and back action is experimentally investigated. A narrow constriction, or quantum point contact, in vicinity to a quantum dot has been shown to serve as a minimally invasive sensor of the charge state of the dot. If charge transport through the quantum dot is slow enough (kHz), the charge sensor allows the detection of time-resolved transport through quantum-confined structures. This has allowed us to measure extremely small currents not detectable with conventional electronics. In addition the full statistics of current fluctuations becomes experimentally accessible. This way correlations between electrons which influence the current flow can be analyzed by measuring the noise and higher moments of the distribution of current fluctuations. Mesoscopic conductors driven out of equilibrium can emit photons which may be detected by another nearby quantum system with suitably tuned energy levels. This way an on-chip microwave single photon detector has been realized. In a ring geometry containing a tunable double quantum dot it has been possible to measure the self-interference of individual electrons as they traverse

  7. Quadra-quantum Dots and Related Patterns of Quantum Dot Molecules:

    Directory of Open Access Journals (Sweden)

    Somsak Panyakeow

    2010-10-01

    Full Text Available Abstract Laterally close-packed quantum dots (QDs called quantum dot molecules (QDMs are grown by modified molecular beam epitaxy (MBE. Quantum dots could be aligned and cross hatched. Quantum rings (QRs created from quantum dot transformation during thin or partial capping are used as templates for the formations of bi-quantum dot molecules (Bi-QDMs and quantum dot rings (QDRs. Preferable quantum dot nanostructure for quantum computation based on quantum dot cellular automata (QCA is laterally close-packed quantum dot molecules having four quantum dots at the corners of square configuration. These four quantum dot sets are called quadra-quantum dots (QQDs. Aligned quadra-quantum dots with two electron confinements work like a wire for digital information transmission by Coulomb repulsion force, which is fast and consumes little power. Combination of quadra-quantum dots in line and their cross-over works as logic gates and memory bits. Molecular Beam Epitaxial growth technique called ‘‘Droplet Epitaxy” has been developed for several quantum nanostructures such as quantum rings and quantum dot rings. Quantum rings are prepared by using 20 ML In-Ga (15:85 droplets deposited on a GaAs substrate at 390°C with a droplet growth rate of 1ML/s. Arsenic flux (7–8×10-6Torr is then exposed for InGaAs crystallization at 200°C for 5 min. During droplet epitaxy at a high droplet thickness and high temperature, out-diffusion from the centre of droplets occurs under anisotropic strain. This leads to quantum ring structures having non-uniform ring stripes and deep square-shaped nanoholes. Using these peculiar quantum rings as templates, four quantum dots situated at the corners of a square shape are regrown. Two of these four quantum dots are aligned either or , which are preferable crystallographic directions of quantum dot alignment in general.

  8. Quantum features of semiconductor quantum dots

    International Nuclear Information System (INIS)

    Lozada-Cassou, M.; Dong Shihai; Yu Jiang

    2004-01-01

    The exact solutions of the two-dimensional Schrodinger equation with the position-dependent mass for the square well potential in the semiconductor quantum dots system are obtained. The eigenvalues, which are closely related to the position-dependent masses μ1 and μ2, the potential well depth V0 and the radius of the quantum dots r0, can be calculated from two boundary conditions. We generalize this quantum system to three-dimensional case. The special cases for the angular momentum quantum number l=0, 1, 2 are studied in some detail. We find that the energy levels are proportional to the parameters μ2, V0 and r0 for l=0. The relations between them for l=1, 2 become very complicated. The scattering states of this quantum system are mentioned briefly

  9. DNA origami: a quantum leap for self-assembly of complex structures

    DEFF Research Database (Denmark)

    Tørring, Thomas; Voigt, Niels Vinther; Nangreave, Jeanette

    2011-01-01

    The spatially controlled positioning of functional materials by self-assembly is one of the fundamental visions of nanotechnology. Major steps towards this goal have been achieved using DNA as a programmable building block. This tutorial review will focus on one of the most promising methods: DNA...... origami. The basic design principles, organization of a variety of functional materials and recent implementation of DNA robotics are discussed together with future challenges and opportunities....

  10. Large quantum dots with small oscillator strength

    DEFF Research Database (Denmark)

    Stobbe, Søren; Schlereth, T.W.; Höfling, S.

    2010-01-01

    We have measured the oscillator strength and quantum efficiency of excitons confined in large InGaAs quantum dots by recording the spontaneous emission decay rate while systematically varying the distance between the quantum dots and a semiconductor-air interface. The size of the quantum dots...... is measured by in-plane transmission electron microscopy and we find average in-plane diameters of 40 nm. We have calculated the oscillator strength of excitons of that size assuming a quantum-dot confinement given by a parabolic in-plane potential and a hard-wall vertical potential and predict a very large...... intermixing inside the quantum dots....

  11. Ordering parameters of three-dimensional ordered quantum-dot lattices determined by anomalous x-ray diffraction

    International Nuclear Information System (INIS)

    Lechner, R.T.; Springholz, G.; Stangl, J.; Raab, A.; Bauer, G.; Schuelli, T.U.; Holy, V.; Metzger, T.H.

    2004-01-01

    Three dimensional (3D) quantum dot structures can be obtained, e.g., by the growth of self-assembled quantum dot multilayers in which vertically and laterally ordered dot superstructures are formed as a result of the elastic interlayer dot interactions between the dots. This not only results in a significant narrowing of the size distribution, but different 3D interlayer correlations can be obtained by changes in the spacer thickness, as has been demonstrated for the PbSe/PbEuTe quantum dot material system. Apart from microscopic techniques, x-ray diffraction is a very powerful tool to characterize the ordering in such 3D assembled quantum dot structures. However, the analysis of the diffraction spectra is usually complicated by the weak scattering contrast between the self-assembled quantum dots and the surrounding matrix material. In the present work, we therefore employ anomalous x-ray diffraction with synchrotron radiation to drastically enhance the chemical contrast in such multilayers by tuning the wavelength close to an inner shell absorption resonance. This technique is applied to determine the ordering of differently stacked self-assembled PbSe quantum dot lattices fabricated by molecular beam epitaxy. In this case, the x-ray wavelength is tuned to the Pb M-shell at 5.1 Aato enhance the scattering contrast between the PbSe dots and the matrix material in comparison to the results obtained using conventional x-ray wavelengths around 1.5 Aa. As a result, it is shown that the lateral ordering is significantly better for 3D trigonal PbSe dot superlattices as compared to those with 3D hexagonal dot arrangement. (author)

  12. Site-controlled quantum dots fabricated using an atomic-force microscope assisted technique

    Directory of Open Access Journals (Sweden)

    Sakuma Y

    2006-01-01

    Full Text Available AbstractAn atomic-force microscope assisted technique is developed to control the position and size of self-assembled semiconductor quantum dots (QDs. Presently, the site precision is as good as ± 1.5 nm and the size fluctuation is within ± 5% with the minimum controllable lateral diameter of 20 nm. With the ability of producing tightly packed and differently sized QDs, sophisticated QD arrays can be controllably fabricated for the application in quantum computing. The optical quality of such site-controlled QDs is found comparable to some conventionally self-assembled semiconductor QDs. The single dot photoluminescence of site-controlled InAs/InP QDs is studied in detail, presenting the prospect to utilize them in quantum communication as precisely controlled single photon emitters working at telecommunication bands.

  13. Bi-Component Nanostructured Arrays of Co Dots Embedded in Ni80Fe20 Antidot Matrix: Synthesis by Self-Assembling of Polystyrene Nanospheres and Magnetic Properties.

    Science.gov (United States)

    Coïsson, Marco; Celegato, Federica; Barrera, Gabriele; Conta, Gianluca; Magni, Alessandro; Tiberto, Paola

    2017-08-23

    A bi-component nanostructured system composed by a Co dot array embedded in a Ni 80 Fe 20 antidot matrix has been prepared by means of the self-assembling polystyrene nanospheres lithography technique. Reference samples constituted by the sole Co dots or Ni 80 Fe 20 antidots have also been prepared, in order to compare their properties with those of the bi-component material. The coupling between the two ferromagnetic elements has been studied by means of magnetic and magneto-transport measurements. The Ni 80 Fe 20 matrix turned out to affect the vortex nucleation field of the Co dots, which in turn modifies the magneto-resistance behaviour of the system and its spinwave properties.

  14. Electron correlations in quantum dots

    International Nuclear Information System (INIS)

    Tipton, Denver Leonard John

    2001-01-01

    Quantum dot structures confine electrons in a small region of space. Some properties of semiconductor quantum dots, such as the discrete energy levels and shell filling effects visible in addition spectra, have analogies to those of atoms and indeed dots are sometimes referred to as 'artificial atoms'. However, atoms and dots show some fundamental differences due to electron correlations. For real atoms, the kinetic energy of electrons dominates over their mutual Coulomb repulsion energy and for this reason the independent electron approximation works well. For quantum dots the confining potential may be shallower than that of real atoms leading to lower electron densities and a dominance of mutual Coulomb repulsion over kinetic energy. In this strongly correlated regime the independent electron picture leads to qualitatively incorrect results. This thesis concentrates on few-electron quantum dots in the strongly correlated regime both for quasi-one-dimensional and two-dimensional dots in a square confining potential. In this so-called 'Wigner' regime the ground-state electronic charge density is localised near positions of classical electrostatic minima and the interacting electronic spectrum consists of well separated spin multiplets. In the strongly correlated regime the structure of low-energy multiplets is explained by mapping onto lattice models with extended-Hubbard and Heisenberg effective Hamiltonians. The parameters for these effective models are calculated within a Hartree approximation and are shown to reproduce well the exact results obtained by numerical diagonalisation of the full interacting Hamiltonian. Comparison is made between square dots and quantum rings with full rotational symmetry. In the very low-density regime, direct diagonalisation becomes impractical due to excessive computer time for convergence. In this regime a numerical renormalisation group method is applied to one-dimensional dots, enabling effective spin-interactions to be

  15. Facilitated preparation of bioconjugatable zwitterionic quantum dots using dual-lipid encapsulation.

    Science.gov (United States)

    Shrake, Robert; Demillo, Violeta G; Ahmadiantehrani, Mojtaba; Zhu, Xiaoshan; Publicover, Nelson G; Hunter, Kenneth W

    2015-01-01

    Zwitterionic quantum dots prepared through incorporated zwitterionic ligands on quantum dot surfaces, are being paid significant attention in biomedical applications because of their excellent colloidal stability across a wide pH and ionic strength range, antifouling surface, good biocompatibility, etc. In this work, we report a dual-lipid encapsulation approach to prepare bioconjugatable zwitterionic quantum dots using amidosulfobetaine-16 lipids, dipalmitoyl-sn-glycero-3-phosphoethanolamine lipids with functional head groups, and CuInS2/ZnS quantum dots in a tetrahydrofuran/methanol/water solvent system with sonication. Amidosulfobetaine-16 is a zwitterionic lipid and dipalmitoyl-sn-glycero-3-phosphoethanolamine, with its functional head, provides bioconjugation capability. Under sonication, tetrahydrofuran/methanol containing amidosulfobetaine-16, dipalmitoyl-sn-glycero-3-phosphoethanolamine, and hydrophobic quantum dots are dispersed in water to form droplets. Highly water-soluble tetrahydrofuran/methanol in droplets is further displaced by water, which induces the lipid self-assembling on hydrophobic surface of quantum dots and thus forms water soluble zwitterionic quantum dots. The prepared zwitterionic quantum dots maintain colloidal stability in aqueous solutions with high salinity and over a wide pH range. They are also able to be conjugated with biomolecules for bioassay with minimal nonspecific binding. Copyright © 2014 Elsevier Inc. All rights reserved.

  16. Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 mu m

    DEFF Research Database (Denmark)

    Fiore, A.; Borri, Paola; Langbein, Wolfgang

    2000-01-01

    We present the rime-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emitting at 1.3 mu m at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time...

  17. InGaAs/GaAs quantum-dot-quantum-well heterostructure formed by submonolayer deposition

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Leosson, K.; Birkedal, Dan

    2003-01-01

    -dot-quantum-well (QDQW) structure, by using high power PL and selective PL with excitation energies below the band gap of the GaAs barriers and temperature dependent PL. As the temperature is increased from 10 to 300 K, a narrowing of the full width at half-maximum at intermediate temperatures and a sigmoidal behaviour......Discrete emission lines from self-assembled InGaAs quantum dots (QDs) grown in the submonolayer (SML) deposition mode have been observed in micro-photoluminescence (PL) spectra at 10 K. For the first time, the SML-grown InGaAs/GaAs QD heterostructure is verified to be a quantum...

  18. Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices.

    Science.gov (United States)

    Sapienza, Luca; Liu, Jin; Song, Jin Dong; Fält, Stefan; Wegscheider, Werner; Badolato, Antonio; Srinivasan, Kartik

    2017-07-24

    We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots. The motivation of this work is to determine an approach that allows to assess single quantum dots as candidates for quantum nanophotonic devices. By combining optical and scanning probe characterization techniques, we find that single quantum dots often appear in the vicinity of comparatively large topographic features. Despite this, the quantum dots generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions, and this behavior is observed across multiple wafers produced in different growth chambers. Such large surface features are nevertheless a detriment to applications in which single quantum dots are embedded within nanofabricated photonic devices: they are likely to cause large spectral shifts in the wavelength of cavity modes designed to resonantly enhance the quantum dot emission, thereby resulting in a nominally perfectly-fabricated single quantum dot device failing to behave in accordance with design. We anticipate that the approach of screening quantum dots not only based on their optical properties, but also their surrounding surface topographies, will be necessary to improve the yield of single quantum dot nanophotonic devices.

  19. Nuclear Spins in Quantum Dots

    NARCIS (Netherlands)

    Erlingsson, S.I.

    2003-01-01

    The main theme of this thesis is the hyperfine interaction between the many lattice nuclear spins and electron spins localized in GaAs quantum dots. This interaction is an intrinsic property of the material. Despite the fact that this interaction is rather weak, it can, as shown in this thesis,

  20. Polymer-coated quantum dots

    NARCIS (Netherlands)

    Tomczak, N.; Liu, Rongrong; Vancso, Gyula J.

    2013-01-01

    Quantum Dots (QDs) are semiconductor nanocrystals with distinct photophysical properties finding applications in biology, biosensing, and optoelectronics. Polymeric coatings of QDs are used primarily to provide long-term colloidal stability to QDs dispersed in solutions and also as a source of

  1. Wavelength tunable InAs/InP(1 0 0) quantum dots in 1.55-µm telecom devices

    NARCIS (Netherlands)

    Anantathanasarn, S.; Barbarin, Y.; Cade, N.I.; Veldhoven, van P.J.; Bente, E.A.J.M.; Oei, Y.S.; Kamada, H.; Smit, M.K.; Nötzel, R.

    2007-01-01

    This paper reviews the growth, characterization and device applications of self-assembled InAs/InP(1 0 0) quantum dots (QDs) formed by MOVPE. The problematic As/P exchange reaction during QD growth is suppressed by the insertion of a GaAs interlayer together with optimum growth conditions. This

  2. Linewidth statistics of single InGaAs quantum dot photolumincescence lines

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher

    2000-01-01

    We have used photoluminescence spectroscopy with high spatial and spectral resolution to measure the linewidths of single emission lines from In0.5Ga0.5As/GaAs self-assembled quantum dots. At 10 K, we find a broad, asymmetric distribution of linewidths with a maximum at 50 mu eV. The distribution......-dot luminescence lines depends only weakly on temperature up to 50 K, showing a broadening of 0.4 mu eV/K. Above 50 K, a thermally activated behavior of the linewidth is observed. This temperature dependence is consistent with the discrete energy level structure of the dots....

  3. Realization of electrically tunable single quantum dot nanocavities

    Energy Technology Data Exchange (ETDEWEB)

    Hofbauer, Felix Florian Georg

    2009-03-15

    We investigated the design, fabrication and optical investigation of electrically tunable single quantum dot-photonic crystal defect nanocavities operating in both the weak and strong coupling regimes of the light matter interaction. We demonstrate that the quantum confined Stark effect can be employed to quickly and reversibly switch the dot-cavity coupling, simply by varying a gate voltage. Our results show that exciton transitions from individual dots can be tuned by up to {proportional_to}4 meV relative to the nanocavity mode, before the emission quenches due to carrier tunneling escape from the dots. We directly probe spontaneous emission, irreversible polariton decay and the statistics of the emitted photons from a single-dot nanocavity in the weak and strong coupling regimes. New information is obtained on the nature of the dot-cavity coupling in the weak coupling regime and electrical control of zero dimensional polaritons is demonstrated for the first time. The structures investigated are p-i-n photodiodes consisting of an 180nm thick free-standing GaAs membrane into which a two dimensional photonic crystal is formed by etching a triangular lattice of air holes. Low mode volume nanocavities (V{sub mode}<1.6 ({lambda}/n){sup 3}) are realized by omitting 3 holes in a line to form L3 cavities and a single layer of InGaAs self-assembled quantum dots is embedded into the midpoint of the membrane. The nanocavities are electrically contacted via 35 nm thick p- and n-doped contact layers in the GaAs membrane. In the weak coupling regime, time resolved spectroscopy reveals a {proportional_to}7 x shortening of the spontaneous emission lifetime as the dot is tuned through the nanocavity mode, due to the Purcell effect. Upon strongly detuning the same quantum dot transition from the nanocavity mode we observe an additional {proportional_to}8 x lengthening of the spontaneous emission lifetime. These observations unequivocally highlight two regimes of dot

  4. Quantum Dot Nanobioelectronics and Selective Antimicrobial Redox Interventions

    Science.gov (United States)

    Goodman, Samuel Martin

    The unique properties of nanomaterials have engendered a great deal of interest in applying them for applications ranging from solid state physics to bio-imaging. One class of nanomaterials, known collectively as quantum dots, are defined as semiconducting crystals which have a characteristic dimension smaller than the excitonic radius of the bulk material which leads to quantum confinement effects. In this size regime, excited charge carriers behave like prototypical particles in a box, with their energy levels defined by the dimensions of the constituent particle. This is the source of the tunable optical properties which have drawn a great deal of attention with regards to finding appropriate applications for these materials. This dissertation is divided into multiple sections grouped by the type of application explored. The first sectoin investigates the energetic interactions of physically-coupled quantum dots and DNA, with the goal of gaining insight into how self-assembled molecular wires can bridge the energetic states of physically separated nanocrystals. Chapter 1 begins with an introduction to the properties of quantum dots, the conductive properties of DNA, and the common characterization methods used to characterize materials on the nanoscale. In Chapter 2 scanning tunneling measurements of QD-DNA constructs on the single particle level are presented which show the tunable coupling between the two materials and their resulting hybrid electronic structure. This is expanded upon in Chapter 3 where the conduction of photogenerated charges in QD-DNA hybrid thin films are characterized, which exhibit different charge transfer pathways through the constituent nucleobases depending on the energy of the incident light and resulting electrons. Complementary investigations of energy transfer mediated through DNA are presented in Chapter 4, with confirmation of Dexter-like transfer being facilitated through the oligonucleotides. The second section quantifies the

  5. Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness

    Science.gov (United States)

    Angelova, T.; Cros, A.; Cantarero, A.; Fuster, D.; González, Y.; González, L.

    2008-08-01

    Self-assembled InAs/InP (001) quantum wire stacks have been investigated by means of Raman scattering. The characteristics of the observed vibrational modes show clear evidence of confinement and atomic intermixing between As and P atoms from the wire and the spacer. The change in the intermixing with spacer layer thickness and growth temperature is investigated. Likewise, the effect of annealing on the exchange of As and P atoms is also studied. Resonance effects in confined and interface phonons are discussed for excitation in the vicinity of the InAs E1 critical point. Finally, the energy of the interface modes is related to the structural characteristics of the wires by comparing the experimental data with a lattice dynamic calculation based on the dielectric continuum model.

  6. Investigation of the fabrication mechanism of self-assembled GaAs quantum rings grown by droplet epitaxy.

    Science.gov (United States)

    Tong, C Z; Yoon, S F

    2008-09-10

    We have directly imaged the formation of a GaAs quantum ring (QR) using droplet epitaxy followed by annealing in arsenic ambient. Based on the atomic force micrograph measurement and the analysis of surface energy, we determine that the formation of self-assembled GaAs QRs is due to the gallium atom's diffusion and crystallization driven by the gradient of surface energy. The phenomenon that GaAs is etched by the gallium droplets is reported and analyzed. It has been demonstrated that the epitaxy layers, such as AlAs and InGaP, can be used as the etching stop layer and hence can be used to control the shape and height of the QRs.

  7. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

    2002-01-01

    -power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

  8. Size dependence in tunneling spectra of PbSe quantum-dot arrays.

    Science.gov (United States)

    Ou, Y C; Cheng, S F; Jian, W B

    2009-07-15

    Interdot Coulomb interactions and collective Coulomb blockade were theoretically argued to be a newly important topic, and experimentally identified in semiconductor quantum dots, formed in the gate confined two-dimensional electron gas system. Developments of cluster science and colloidal synthesis accelerated the studies of electron transport in colloidal nanocrystal or quantum-dot solids. To study the interdot coupling, various sizes of two-dimensional arrays of colloidal PbSe quantum dots are self-assembled on flat gold surfaces for scanning tunneling microscopy and scanning tunneling spectroscopy measurements at both room and liquid-nitrogen temperatures. The tip-to-array, array-to-substrate, and interdot capacitances are evaluated and the tunneling spectra of quantum-dot arrays are analyzed by the theory of collective Coulomb blockade. The current-voltage of PbSe quantum-dot arrays conforms properly to a scaling power law function. In this study, the dependence of tunneling spectra on the sizes (numbers of quantum dots) of arrays is reported and the capacitive coupling between quantum dots in the arrays is explored.

  9. Multi-Excitonic Quantum Dot Molecules

    Science.gov (United States)

    Scheibner, M.; Stinaff, E. A.; Doty, M. F.; Ware, M. E.; Bracker, A. S.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

    2006-03-01

    With the ability to create coupled pairs of quantum dots, the next step towards the realization of semiconductor based quantum information processing devices can be taken. However, so far little knowledge has been gained on these artificial molecules. Our photoluminescence experiments on single InAs/GaAs quantum dot molecules provide the systematics of coupled quantum dots by delineating the spectroscopic features of several key charge configurations in such quantum systems, including X, X^+,X^2+, XX, XX^+ (with X being the neutral exciton). We extract general rules which determine the formation of molecular states of coupled quantum dots. These include the fact that quantum dot molecules provide the possibility to realize various spin configurations and to switch the electron hole exchange interaction on and off by shifting charges inside the molecule. This knowledge will be valuable in developing implementations for quantum information processing.

  10. Theory of electron energy spectrum and Aharonov-Bohm effect in self-assembled Inx Ga1-x As quantum rings in GaAs

    NARCIS (Netherlands)

    Fomin, V.M.; Gladilin, V.N.; Klimin, S.N.; Devreese, J.T.; Kleemans, N.A.J.M.; Koenraad, P.M.

    2007-01-01

    We analyze theoretically the electron energy spectrum and the magnetization of an electron in a strained Inx Ga1-x As GaAs self-assembled quantum ring (SAQR) with realistic parameters, determined from the cross-sectional scanning-tunneling microscopy characterization of that nanostructure. The SAQRs

  11. Colloidal quantum dot photodetectors

    KAUST Repository

    Konstantatos, Gerasimos; Sargent, Edward H.

    2011-01-01

    in particular on visible-, near-infrared, and short-wavelength infrared photodetectors based on size-effect-tuned semiconductor nanoparticles made using quantum-confined PbS, PbSe, Bi 2S3, and In2S3. These devices have in recent years achieved room-temperature D

  12. The quantum Hall effect in quantum dot systems

    International Nuclear Information System (INIS)

    Beltukov, Y M; Greshnov, A A

    2014-01-01

    It is proposed to use quantum dots in order to increase the temperatures suitable for observation of the integer quantum Hall effect. A simple estimation using Fock-Darwin spectrum of a quantum dot shows that good part of carriers localized in quantum dots generate the intervals of plateaus robust against elevated temperatures. Numerical calculations employing local trigonometric basis and highly efficient kernel polynomial method adopted for computing the Hall conductivity reveal that quantum dots may enhance peak temperature for the effect by an order of magnitude, possibly above 77 K. Requirements to potentials, quality and arrangement of the quantum dots essential for practical realization of such enhancement are indicated. Comparison of our theoretical results with the quantum Hall measurements in InAs quantum dot systems from two experimental groups is also given

  13. Modeling of the quantum dot filling and the dark current of quantum dot infrared photodetectors

    International Nuclear Information System (INIS)

    Ameen, Tarek A.; El-Batawy, Yasser M.; Abouelsaood, A. A.

    2014-01-01

    A generalized drift-diffusion model for the calculation of both the quantum dot filling profile and the dark current of quantum dot infrared photodetectors is proposed. The confined electrons inside the quantum dots produce a space-charge potential barrier between the two contacts, which controls the quantum dot filling and limits the dark current in the device. The results of the model reasonably agree with a published experimental work. It is found that increasing either the doping level or the temperature results in an exponential increase of the dark current. The quantum dot filling turns out to be nonuniform, with a dot near the contacts containing more electrons than one in the middle of the device where the dot occupation approximately equals the number of doping atoms per dot, which means that quantum dots away from contacts will be nearly unoccupied if the active region is undoped

  14. Quantum Logic Using Excitonic Quantum Dots in External Optical Microcavities

    National Research Council Canada - National Science Library

    Raymer, Michael

    2003-01-01

    An experimental project was undertaken to develop means to achieve quantum optical strong coupling between a single GaAs quantum dot and the optical mode of a microcavity for the purpose of quantum...

  15. Systematic optimization of quantum junction colloidal quantum dot solar cells

    KAUST Repository

    Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Tang, Jiang; Kramer, Illan J.; Ning, Zhijun; Sargent, Edward H.

    2012-01-01

    The recently reported quantum junction architecture represents a promising approach to building a rectifying photovoltaic device that employs colloidal quantum dot layers on each side of the p-n junction. Here, we report an optimized quantum

  16. Millimeter Wave Modulators Using Quantum Dots

    National Research Council Canada - National Science Library

    Prather, Dennis W

    2008-01-01

    In this effort electro-optic modulators for millimeter wave sensing and imaging were developed and demonstrated via design, fabrication, and experimental characterization of multi layer quantum dot...

  17. Optical Signatures of Coupled Quantum Dots

    Science.gov (United States)

    Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Ponomarev, I. V.; Korenev, V. L.; Ware, M. E.; Doty, M. F.; Reinecke, T. L.; Gammon, D.

    2006-02-01

    An asymmetric pair of coupled InAs quantum dots is tuned into resonance by applying an electric field so that a single hole forms a coherent molecular wave function. The optical spectrum shows a rich pattern of level anticrossings and crossings that can be understood as a superposition of charge and spin configurations of the two dots. Coulomb interactions shift the molecular resonance of the optically excited state (charged exciton) with respect to the ground state (single charge), enabling light-induced coupling of the quantum dots. This result demonstrates the possibility of optically coupling quantum dots for application in quantum information processing.

  18. Quantum optics with quantum dots in photonic nanowires

    DEFF Research Database (Denmark)

    We will review recent studies performed on InAs quantum dots embedded in GaAs photonic wires, which highlight the strong interest of the photonic wire geometry for quantum optics experiments and quantum optoelectronic devices.......We will review recent studies performed on InAs quantum dots embedded in GaAs photonic wires, which highlight the strong interest of the photonic wire geometry for quantum optics experiments and quantum optoelectronic devices....

  19. Stark shifting two-electron quantum dot

    International Nuclear Information System (INIS)

    Dineykhan, M.; Zhaugasheva, S.A.; Duysebaeva, K.S.

    2003-01-01

    Advances in modern technology make it possible to create semiconducting nano-structures (quantum dot) in which a finite number of electrons are 'captured' in a bounded volume. A quantum dot is associated with a quantum well formed at the interface, between two finite-size semiconductors owing to different positions of the forbidden gaps on the energy scale in these semiconductors. The possibility of monitoring and controlling the properties of quantum dots attracts considerable attention to these objects, as a new elemental basis for future generations of computers. The quantum-mechanical effects and image potential play a significant role in the description of the formation mechanism quantum dot, and determined the confinement potential in a two-electron quantum dot only for the spherical symmetric case. In the present talk, we considered the formation dynamics of two-electron quantum dot with violation of spherical symmetry. So, we have standard Stark potential. The energy spectrum two-electron quantum dot were calculated. Usually Stark interactions determined the tunneling phenomena between quantum dots

  20. Hydrogenic impurity in double quantum dots

    International Nuclear Information System (INIS)

    Wang, X.F.

    2007-01-01

    The ground state binding energy and the average interparticle distances for a hydrogenic impurity in double quantum dots with Gaussian confinement potential are studied by the variational method. The probability density of the electron is calculated, too. The dependence of the binding energy on the impurity position is investigated for GaAs quantum dots. The result shows that the binding energy has a minimum as a function of the distance between the two quantum dots when the impurity is located at the center of one quantum dot or at the center of the edge of one quantum dot. When the impurity is located at the center of the two dots, the binding energy decreases monotonically

  1. Real-Time Observation of Exciton-Phonon Coupling Dynamics in Self-Assembled Hybrid Perovskite Quantum Wells.

    Science.gov (United States)

    Ni, Limeng; Huynh, Uyen; Cheminal, Alexandre; Thomas, Tudor H; Shivanna, Ravichandran; Hinrichsen, Ture F; Ahmad, Shahab; Sadhanala, Aditya; Rao, Akshay

    2017-11-28

    Self-assembled hybrid perovskite quantum wells have attracted attention due to their tunable emission properties, ease of fabrication, and device integration. However, the dynamics of excitons in these materials, especially how they couple to phonons, remains an open question. Here, we investigate two widely used materials, namely, butylammonium lead iodide (CH 3 (CH 2 ) 3 NH 3 ) 2 PbI 4 and hexylammonium lead iodide (CH 3 (CH 2 ) 5 NH 3 ) 2 PbI 4 , both of which exhibit broad photoluminescence tails at room temperature. We performed femtosecond vibrational spectroscopy to obtain a real-time picture of the exciton-phonon interaction and directly identified the vibrational modes that couple to excitons. We show that the choice of the organic cation controls which vibrational modes the exciton couples to. In butylammonium lead iodide, excitons dominantly couple to a 100 cm -1 phonon mode, whereas in hexylammonium lead iodide, excitons interact with phonons with frequencies of 88 and 137 cm -1 . Using the determined optical phonon energies, we analyzed photoluminescence broadening mechanisms. At low temperatures (photoluminescence line shape observed in hybrid perovskite quantum wells and provide insights into the mechanism of exciton-phonon coupling in these materials.

  2. Colloidal quantum dot photodetectors

    KAUST Repository

    Konstantatos, Gerasimos

    2011-05-01

    We review recent progress in light sensors based on solution-processed materials. Spin-coated semiconductors can readily be integrated with many substrates including as a post-process atop CMOS silicon and flexible electronics. We focus in particular on visible-, near-infrared, and short-wavelength infrared photodetectors based on size-effect-tuned semiconductor nanoparticles made using quantum-confined PbS, PbSe, Bi 2S3, and In2S3. These devices have in recent years achieved room-temperature D values above 1013 Jones, while fully-depleted photodiodes based on these same materials have achieved MHz response combined with 1012 Jones sensitivities. We discuss the nanoparticle synthesis, the materials processing, integrability, temperature stability, physical operation, and applied performance of this class of devices. © 2010 Elsevier Ltd. All rights reserved.

  3. Temperature dependence of photoluminescence from submonolayer deposited InGaAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Leosson, K.; Birkedal, Dan

    2002-01-01

    The temperature dependence of photoluminescence (PL) from self-assembled InGaAs quantum dots (QD's) grown by submonolayer deposition mode (non-SK mode), is investigated. It is found that the PL spectra are dominated by the ground-state transitions at low temperatures, but increasingly...... by the excited-state transitions at higher temperatures. The emission linewidth of the ground-state transitions of QDs ensembles first decreases and then increases with the increase of temperature, which results from the carrier transfer between dots via barrier states....

  4. Exciton in type-II quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Sierra-Ortega, J; Escorcia, R A [Universidad del Magdalena, A. A. 731, Santa Marta (Colombia); Mikhailov, I D, E-mail: jsierraortega@gmail.co [Universidad Industrial de Santander, A. A. 678, Bucaramanga (Colombia)

    2009-05-01

    We study the quantum-size effect and the influence of the external magnetic field on the exciton ground state energy in the type-II InP quantum disk, lens and pyramid deposited on a wetting layer and embedded in a GaInP matrix. We show that the charge distribution over and below quantum dot and wetting layer induced by trapped exciton strongly depends on the quantum dot morphology and the strength of the magnetic field.

  5. Design of quantum dot lattices in amorphous matrices by ion beam irradiation

    International Nuclear Information System (INIS)

    Buljan, M.; Bogdanovic-Radovic, I.; Karlusic, M.; Desnica, U. V.; Radic, N.; Jaksic, M.; Salamon, K.; Drazic, G.; Bernstorff, S.; Holy, V.

    2011-01-01

    We report on the highly controllable self-assembly of semiconductor quantum dots and metallic nanoparticles in a solid amorphous matrix, induced by ion beam irradiation of an amorphous multilayer. We demonstrate experimentally and theoretically a possibility to tune the basic structural properties of the quantum dots in a wide range. Furthermore, the sizes, distances, and arrangement type of the quantum dots follow simple equations dependent on the irradiation and the multilayer properties. We present a Monte Carlo model for the simulation and prediction of the structural properties of the materials formed by this method. The presented results enable engineering and simple production of functional materials or simple devices interesting for applications in nanotechnology.

  6. Spin Switching via Quantum Dot Spin Valves

    Science.gov (United States)

    Gergs, N. M.; Bender, S. A.; Duine, R. A.; Schuricht, D.

    2018-01-01

    We develop a theory for spin transport and magnetization dynamics in a quantum dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate that, as a result of these strong correlations, the dot gate voltage enables control over the current-induced torques on the magnets and, in particular, enables voltage-controlled magnetic switching. The electrical resistance of the structure can be used to read out the magnetic state. Our model may be realized by a number of experimental systems, including magnetic scanning-tunneling microscope tips and artificial quantum dot systems.

  7. Electronic and excitonic properties of self-assembled semiconductor quantum rings

    NARCIS (Netherlands)

    Fomin, V.M.; Gladilin, V.N.; Devreese, J.T.; Blokland, J.H.; Christianen, P.C.M.; Maan, J.C.; Taboada, A.G.; Granados, D.; Garcia, J.M.; Kleemans, N.A.J.M.; Genuchten, van H.C.M.; Bozkurt, M.; Koenraad, P.M.; Wixforth, A.; Lorke, A.

    2009-01-01

    Theoretical analysis of the electron energy spectrum and the magnetization in a strained InxGa1-xAs/GaAs selfassembled quantum ring (SAQR) is performed using realistic parameters, determined from the cross-sectional scanning-tunneling microscopy characterization. The Aharonov-Bohm oscillations in

  8. Detecting the chirality for coupled quantum dots

    International Nuclear Information System (INIS)

    Cao Huijuan; Hu Lian

    2008-01-01

    We propose a scheme to detect the chirality for a system consisting of three coupled quantum dots. The chirality is found to be determined by the frequency of the transition between chiral states under the chiral symmetry broken perturbation. The results are important to construct quantum gates and to demonstrate chiral entangle states in the triangle spin dots

  9. Optical Properties of Semiconductor Quantum Dots

    NARCIS (Netherlands)

    Perinetti, U.

    2011-01-01

    This thesis presents different optical experiments performed on semiconductor quantum dots. These structures allow to confine a small number of electrons and holes to a tiny region of space, some nm across. The aim of this work was to study the basic properties of different types of quantum dots

  10. Thick-shell nanocrystal quantum dots

    Science.gov (United States)

    Hollingsworth, Jennifer A [Los Alamos, NM; Chen, Yongfen [Eugene, OR; Klimov, Victor I [Los Alamos, NM; Htoon, Han [Los Alamos, NM; Vela, Javier [Los Alamos, NM

    2011-05-03

    Colloidal nanocrystal quantum dots comprising an inner core having an average diameter of at least 1.5 nm and an outer shell, where said outer shell comprises multiple monolayers, wherein at least 30% of the quantum dots have an on-time fraction of 0.80 or greater under continuous excitation conditions for a period of time of at least 10 minutes.

  11. Optical Spectroscopy Of Charged Quantum Dot Molecules

    Science.gov (United States)

    Scheibner, M.; Bracker, A. S.; Stinaff, E. A.; Doty, M. F.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

    2007-04-01

    Coupling between two closely spaced quantum dots is observed by means of photoluminescence spectroscopy. Hole coupling is realized by rational crystal growth and heterostructure design. We identify molecular resonances of different excitonic charge states, including the important case of a doubly charged quantum dot molecule.

  12. Capture, relaxation and recombination in quantum dots

    NARCIS (Netherlands)

    Sreenivasan, D.

    2008-01-01

    Quantum dots (QDs) have attracted a lot of interest both from application and fundamental physics point of view. A semiconductor quantum dot features discrete atomiclike energy levels, despite the fact that it contains many atoms within its surroundings. The discrete energy levels give rise to very

  13. Spin-based quantum computation in multielectron quantum dots

    OpenAIRE

    Hu, Xuedong; Sarma, S. Das

    2001-01-01

    In a quantum computer the hardware and software are intrinsically connected because the quantum Hamiltonian (or more precisely its time development) is the code that runs the computer. We demonstrate this subtle and crucial relationship by considering the example of electron-spin-based solid state quantum computer in semiconductor quantum dots. We show that multielectron quantum dots with one valence electron in the outermost shell do not behave simply as an effective single spin system unles...

  14. Excitonic quantum interference in a quantum dot chain with rings.

    Science.gov (United States)

    Hong, Suc-Kyoung; Nam, Seog Woo; Yeon, Kyu-Hwang

    2008-04-16

    We demonstrate excitonic quantum interference in a closely spaced quantum dot chain with nanorings. In the resonant dipole-dipole interaction model with direct diagonalization method, we have found a peculiar feature that the excitation of specified quantum dots in the chain is completely inhibited, depending on the orientational configuration of the transition dipole moments and specified initial preparation of the excitation. In practice, these excited states facilitating quantum interference can provide a conceptual basis for quantum interference devices of excitonic hopping.

  15. Complex logic functions implemented with quantum dot bionanophotonic circuits.

    Science.gov (United States)

    Claussen, Jonathan C; Hildebrandt, Niko; Susumu, Kimihiro; Ancona, Mario G; Medintz, Igor L

    2014-03-26

    We combine quantum dots (QDs) with long-lifetime terbium complexes (Tb), a near-IR Alexa Fluor dye (A647), and self-assembling peptides to demonstrate combinatorial and sequential bionanophotonic logic devices that function by time-gated Förster resonance energy transfer (FRET). Upon excitation, the Tb-QD-A647 FRET-complex produces time-dependent photoluminescent signatures from multi-FRET pathways enabled by the capacitor-like behavior of the Tb. The unique photoluminescent signatures are manipulated by ratiometrically varying dye/Tb inputs and collection time. Fluorescent output is converted into Boolean logic states to create complex arithmetic circuits including the half-adder/half-subtractor, 2:1 multiplexer/1:2 demultiplexer, and a 3-digit, 16-combination keypad lock.

  16. A quantum dot-spore nanocomposite pH sensor.

    Science.gov (United States)

    Zhang, Xingya; Li, Zheng; Zhou, Tao; Zhou, Qian; Zeng, Zhiming; Xu, Xiangdong; Hu, Yonggang

    2016-04-01

    A new quantum dot (QD)-based pH sensor design is investigated. The sensor is synthesized based on the self-assembly of green QDs onto treated spores to form QD@spore nanocomposites. The nanocomposites are characterized using laser scanning confocal microscopy, transmission electron microscope, and fluorescence spectroscopy, among others. Fluorescence measurements showed that these nanocomposites are sensitive to pH in a broad pH range of 5.0-10.0. The developed pH sensors have been satisfactorily applied for pH estimation of real samples and are comparable with those of the commercial assay method, indicating the potential practical application of the pH sensors. Copyright © 2015 Elsevier B.V. All rights reserved.

  17. Biocompatible Quantum Dots for Biological Applications

    Science.gov (United States)

    Rosenthal, Sandra J.; Chang, Jerry C.; Kovtun, Oleg; McBride, James R.; Tomlinson, Ian D.

    2011-01-01

    Semiconductor quantum dots are quickly becoming a critical diagnostic tool for discerning cellular function at the molecular level. Their high brightness, long-lasting, sizetunable, and narrow luminescence set them apart from conventional fluorescence dyes. Quantum dots are being developed for a variety of biologically oriented applications, including fluorescent assays for drug discovery, disease detection, single protein tracking, and intracellular reporting. This review introduces the science behind quantum dots and describes how they are made biologically compatible. Several applications are also included, illustrating strategies toward target specificity, and are followed by a discussion on the limitations of quantum dot approaches. The article is concluded with a look at the future direction of quantum dots. PMID:21276935

  18. Magnon-driven quantum dot refrigerators

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yuan; Huang, Chuankun; Liao, Tianjun; Chen, Jincan, E-mail: jcchen@xmu.edu.cn

    2015-12-18

    Highlights: • A three-terminal quantum dot refrigerator is proposed. • The effects of magnetic field, applied voltage, and polarization are considered. • The region that the system can work as a refrigerator is determined. • Two different magnon-driven quantum dot refrigerators are compared. - Abstract: A new model of refrigerator consisting of a spin-splitting quantum dot coupled with two ferromagnetic reservoirs and a ferromagnetic insulator is proposed. The rate equation is used to calculate the occupation probabilities of the quantum dot. The expressions of the electron and magnon currents are obtained. The region that the system can work in as a refrigerator is determined. The cooling power and coefficient of performance (COP) of the refrigerator are derived. The influences of the magnetic field, applied voltage, and polarization of two leads on the performance are discussed. The performances of two different magnon-driven quantum dot refrigerators are compared.

  19. Quantum Dot Platform for Single-Cell Molecular Profiling

    Science.gov (United States)

    Zrazhevskiy, Pavel S.

    In-depth understanding of the nature of cell physiology and ability to diagnose and control the progression of pathological processes heavily rely on untangling the complexity of intracellular molecular mechanisms and pathways. Therefore, comprehensive molecular profiling of individual cells within the context of their natural tissue or cell culture microenvironment is essential. In principle, this goal can be achieved by tagging each molecular target with a unique reporter probe and detecting its localization with high sensitivity at sub-cellular resolution, primarily via microscopy-based imaging. Yet, neither widely used conventional methods nor more advanced nanoparticle-based techniques have been able to address this task up to date. High multiplexing potential of fluorescent probes is heavily restrained by the inability to uniquely match probes with corresponding molecular targets. This issue is especially relevant for quantum dot probes---while simultaneous spectral imaging of up to 10 different probes is possible, only few can be used concurrently for staining with existing methods. To fully utilize multiplexing potential of quantum dots, it is necessary to design a new staining platform featuring unique assignment of each target to a corresponding quantum dot probe. This dissertation presents two complementary versatile approaches towards achieving comprehensive single-cell molecular profiling and describes engineering of quantum dot probes specifically tailored for each staining method. Analysis of expanded molecular profiles is achieved through augmenting parallel multiplexing capacity with performing several staining cycles on the same specimen in sequential manner. In contrast to other methods utilizing quantum dots or other nanoparticles, which often involve sophisticated probe synthesis, the platform technology presented here takes advantage of simple covalent bioconjugation and non-covalent self-assembly mechanisms for straightforward probe

  20. Quantum State Transfer from a Single Photon to a Distant Quantum-Dot Electron Spin

    Science.gov (United States)

    He, Yu; He, Yu-Ming; Wei, Yu-Jia; Jiang, Xiao; Chen, Kai; Lu, Chao-Yang; Pan, Jian-Wei; Schneider, Christian; Kamp, Martin; Höfling, Sven

    2017-08-01

    Quantum state transfer from flying photons to stationary matter qubits is an important element in the realization of quantum networks. Self-assembled semiconductor quantum dots provide a promising solid-state platform hosting both single photon and spin, with an inherent light-matter interface. Here, we develop a method to coherently and actively control the single-photon frequency bins in superposition using electro-optic modulators, and measure the spin-photon entanglement with a fidelity of 0.796 ±0.020 . Further, by Greenberger-Horne-Zeilinger-type state projection on the frequency, path, and polarization degrees of freedom of a single photon, we demonstrate quantum state transfer from a single photon to a single electron spin confined in an InGaAs quantum dot, separated by 5 m. The quantum state mapping from the photon's polarization to the electron's spin is demonstrated along three different axes on the Bloch sphere, with an average fidelity of 78.5%.

  1. Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires

    International Nuclear Information System (INIS)

    Donchev, V; Ivanov, T S; Borisov, K; Angelova, T; Cros, A; Cantarero, A; Fuster, D; Shtinkov, N; Gonzalez, Y; Gonzalez, L

    2010-01-01

    The optical properties of InAs/InP multi-layer quantum wire (QWR) structures of various spacer thicknesses have been investigated by means of room temperature surface photovoltage and photoluminescence spectroscopy. Combined with empirical tight binding calculations, the spectra have revealed transitions assigned to QWR families with heights equal to integer number of 5, 6 and 7 monolayers. From the comparison of the experimental and theoretical results the atomic concentration of phosphorus in the wires has been estimated.

  2. Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires

    Science.gov (United States)

    Donchev, V.; Ivanov, T. S.; Angelova, T.; Cros, A.; Cantarero, A.; Shtinkov, N.; Borisov, K.; Fuster, D.; González, Y.; González, L.

    2010-02-01

    The optical properties of InAs/InP multi-layer quantum wire (QWR) structures of various spacer thicknesses have been investigated by means of room temperature surface photovoltage and photoluminescence spectroscopy. Combined with empirical tight binding calculations, the spectra have revealed transitions assigned to QWR families with heights equal to integer number of 5, 6 and 7 monolayers. From the comparison of the experimental and theoretical results the atomic concentration of phosphorus in the wires has been estimated.

  3. Quantum dot devices for optical communications

    DEFF Research Database (Denmark)

    Mørk, Jesper

    2005-01-01

    -low threshold currents and amplifiers with record-high power levels. In this tutorial we will review the basic properties of quantum dots, emphasizing the properties which are important for laser and amplifier applications, as well as devices for all-optical signal processing. The high-speed properties....... The main property of semiconductor quantum dots compared to bulk material or even quantum well structures is the discrete nature of the allowed states, which means that inversion of the medium can be obtained for very low electron densities. This has led to the fabrication of quantum dot lasers with record...

  4. Electron transport in quantum dots

    CERN Document Server

    2003-01-01

    When I was contacted by Kluwer Academic Publishers in the Fall of 200 I, inviting me to edit a volume of papers on the issue of electron transport in quantum dots, I was excited by what I saw as an ideal opportunity to provide an overview of a field of research that has made significant contributions in recent years, both to our understanding of fundamental physics, and to the development of novel nanoelectronic technologies. The need for such a volume seemed to be made more pressing by the fact that few comprehensive reviews of this topic have appeared in the literature, in spite of the vast activity in this area over the course of the last decade or so. With this motivation, I set out to try to compile a volume that would fairly reflect the wide range of opinions that has emerged in the study of electron transport in quantum dots. Indeed, there has been no effort on my part to ensure any consistency between the different chapters, since I would prefer that this volume instead serve as a useful forum for the...

  5. Quantum measurement of coherent tunneling between quantum dots

    International Nuclear Information System (INIS)

    Wiseman, H. M.; Utami, Dian Wahyu; Sun, He Bi; Milburn, G. J.; Kane, B. E.; Dzurak, A.; Clark, R. G.

    2001-01-01

    We describe the conditional and unconditional dynamics of two coupled quantum dots when one dot is subjected to a measurement of its occupation number by coupling it to a third readout dot via the Coulomb interaction. The readout dot is coupled to source and drain leads under weak bias, and a tunnel current flows through a single bound state when energetically allowed. The occupation of the quantum dot near the readout dot shifts the bound state of the readout dot from a low conducting state to a high conducting state. The measurement is made by continuously monitoring the tunnel current through the readout dot. We show that there is a difference between the time scale for the measurement-induced decoherence between the localized states of the dots, and the time scale on which the system becomes localized due to the measurement

  6. Self-Assembled PbSe Nanowire:Perovskite Hybrids

    KAUST Repository

    Yang, Zhenyu

    2015-12-02

    © 2015 American Chemical Society. Inorganic semiconductor nanowires are of interest in nano- and microscale photonic and electronic applications. Here we report the formation of PbSe nanowires based on directional quantum dot alignment and fusion regulated by hybrid organic-inorganic perovskite surface ligands. All material synthesis is carried out at mild temperatures. Passivation of PbSe quantum dots was achieved via a new perovskite ligand exchange. Subsequent in situ ammonium/amine substitution by butylamine enables quantum dots to be capped by butylammonium lead iodide, and this further drives the formation of a PbSe nanowire superlattice in a two-dimensional (2D) perovskite matrix. The average spacing between two adjacent nanowires agrees well with the thickness of single atomic layer of 2D perovskite, consistent with the formation of a new self-assembled semiconductor nanowire:perovskite heterocrystal hybrid.

  7. Self-Assembled PbSe Nanowire:Perovskite Hybrids

    KAUST Repository

    Yang, Zhenyu; Yassitepe, Emre; Voznyy, Oleksandr; Janmohamed, Alyf; Lan, Xinzheng; Levina, Larissa; Comin, Riccardo; Sargent, Edward H.

    2015-01-01

    © 2015 American Chemical Society. Inorganic semiconductor nanowires are of interest in nano- and microscale photonic and electronic applications. Here we report the formation of PbSe nanowires based on directional quantum dot alignment and fusion regulated by hybrid organic-inorganic perovskite surface ligands. All material synthesis is carried out at mild temperatures. Passivation of PbSe quantum dots was achieved via a new perovskite ligand exchange. Subsequent in situ ammonium/amine substitution by butylamine enables quantum dots to be capped by butylammonium lead iodide, and this further drives the formation of a PbSe nanowire superlattice in a two-dimensional (2D) perovskite matrix. The average spacing between two adjacent nanowires agrees well with the thickness of single atomic layer of 2D perovskite, consistent with the formation of a new self-assembled semiconductor nanowire:perovskite heterocrystal hybrid.

  8. Dicke states in multiple quantum dots

    Science.gov (United States)

    Sitek, Anna; Manolescu, Andrei

    2013-10-01

    We present a theoretical study of the collective optical effects which can occur in groups of three and four quantum dots. We define conditions for stable subradiant (dark) states, rapidly decaying super-radiant states, and spontaneous trapping of excitation. Each quantum dot is treated like a two-level system. The quantum dots are, however, realistic, meaning that they may have different transition energies and dipole moments. The dots interact via a short-range coupling which allows excitation transfer across the dots, but conserves the total population of the system. We calculate the time evolution of single-exciton and biexciton states using the Lindblad equation. In the steady state the individual populations of each dot may have permanent oscillations with frequencies given by the energy separation between the subradiant eigenstates.

  9. Thermoelectric transport through quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Merker, Lukas Heinrich

    2016-06-30

    In this thesis the thermoelectric properties (electrical conductance, Seebeck coefficient and thermal conductance)of quantum dots described by the Anderson impurity model have been investigated by using the numerical renormalization group (NRG) method. In order to make accurate calculations for thermoelectric properties of quantum impurity systems, a number of recent developments and refinements of the NRG have been implemented. These include the z-averaging and Campo discretization scheme, which enable the evaluation of physical quantities on an arbitrary temperature grid and at large discretization parameter Λ and the full density matrix (FDM) approach, which allows a more accurate calculation of spectral functions and transport coefficients. The implementation of the z-averaging and Campo discretization scheme has been tested within a new method for specific heats of quantum impurities. The accuracy of this new method was established by comparison with the numerical solution of the Bethe-ansatz equations for the Anderson model. The FDM approach was implemented and tested within a new approach to the calculation of impurity contributions to the uniform susceptibilities. Within this method a non-negligible contribution from the ''environmental'' degrees of freedom needs to be taken into account to recover the correct susceptibility, as shown by comparison with the Bethe-ansatz approach. An accurate method to calculate the conductance of a quantum dot is implemented, enabling the extraction of the Fermi liquid scaling coefficients c{sub T} and c{sub B} to high accuracy, being able to verify the results of the renormalized super perturbation theory approach (within its regime of validity). The method was generalized to higher order moments of the local level spectral function. This, as well as reduction of the SU(2) code to the U(1) symmetry, enabled the investigation of the effect of a magnetic field on the thermoelectric properties of quantum

  10. DNA nanosensor based on biocompatible graphene quantum dots and carbon nanotubes.

    Science.gov (United States)

    Qian, Zhao Sheng; Shan, Xiao Yue; Chai, Lu Jing; Ma, Juan Juan; Chen, Jian Rong; Feng, Hui

    2014-10-15

    An ultrasensitive nanosensor based on fluorescence resonance energy transfer (FRET) between biocompatible graphene quantum dots and carbon nanotubes for DNA detection was reported. We take advantage of good biocompatibility and strong fluorescence of graphene quantum dots, base pairing specificity of DNA and unique fluorescence resonance energy transfer between graphene quantum dots and carbon nanotubes to achieve the analysis of low concentrations of DNA. Graphene quantum dots with high quantum yield up to 0.20 were prepared and served as the fluorophore of DNA probe. FRET process between graphene quantum dots-labeled probe and oxidized carbon nanotubes is easily achieved due to their efficient self-assembly through specific π-π interaction. This nanosensor can distinguish complementary and mismatched nucleic acid sequences with high sensitivity and good reproducibility. The detection method based on this nanosensor possesses a broad linear span of up to 133.0 nM and ultralow detection limit of 0.4 nM. The constructed nanosensor is expected to be highly biocompatible because of all its components with excellent biocompatibility. Copyright © 2014 Elsevier B.V. All rights reserved.

  11. Room-temperature light-emission from Ge quantum dots in photonic crystals

    Energy Technology Data Exchange (ETDEWEB)

    Xia Jinsong [Advanced Research Laboratories, Musashi Institute of Technolgy, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082 (Japan)], E-mail: jxia@sc.musashi-tech.ac.jp; Nemoto, Koudai; Ikegami, Yuta [Advanced Research Laboratories, Musashi Institute of Technolgy, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082 (Japan); Usami, Noritaka [Institute of Materials Research, Tohoku University, 2-2-1 Katahira, Aoba-ku, Sendai Japan (Japan)], E-mail: usa@imr.tohoku.ac.jp; Nakata, Yasushi [Horiba, Ltd., 1-7-8 Higashi-Kanda, Chiyoda-ku, Tokyo 101-0031 (Japan)], E-mail: yasushi.nakata@horiba.com; Shiraki, Yasuhiro [Advanced Research Laboratories, Musashi Institute of Technolgy, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082 (Japan)

    2008-11-03

    Multiple layers of Ge self-assembled quantum dots were embedded into two-dimensional silicon photonic crystal microcavities fabricated on silicon-on-insulator substrates. Microphotoluminescence was used to study the light-emission characteristic of the Ge quantum dots in the microcavities. Strong resonant room-temperature light-emission was observed in the telecommunication wavelength region. Significant enhancement of the luminescence from Ge dots was obtained due to the resonance in the cavities. Multiple sharp resonant peaks dominated the spectrum, showing strong optical resonance inside the cavity. By changing the lattice constant of photonic crystal structure, the wavelengths of the resonant peaks are tuned in the wide wavelength range from 1.2 to 1.6 {mu}m.

  12. Circularly organized quantum dot nanostructures of Ge on Si substrates

    International Nuclear Information System (INIS)

    Cai, Qijia; Chen, Peixuan; Zhong, Zhenyang; Jiang, Zuimin; Lu, Fang; An, Zhenghua

    2009-01-01

    A novel circularly arranged structure of germanium quantum dots has been fabricated by combining techniques including electron beam lithography, wet etching and molecular beam epitaxy. It was observed that both pattern and growth parameters affect the morphology of the quantum dot molecules. Meanwhile, the oxidation mask plays a vital role in the formation of circularly organized quantum dots. The experimental results demonstrate the possibilities of investigating the properties of quantum dot molecules as well as single quantum dots

  13. Chiral Responsive Liquid Quantum Dots.

    Science.gov (United States)

    Zhang, Jin; Ma, Junkai; Shi, Fangdan; Tian, Demei; Li, Haibing

    2017-08-01

    How to convert the weak chiral-interaction into the macroscopic properties of materials remains a huge challenge. Here, this study develops highly fluorescent, selectively chiral-responsive liquid quantum dots (liquid QDs) based on the hydrophobic interaction between the chiral chains and the oleic acid-stabilized QDs, which have been designated as (S)-1810-QDs. The fluorescence spectrum and liquidity of thermal control demonstrate the fluorescence properties and the fluidic behavior of (S)-1810-QDs in the solvent-free state. Especially, (S)-1810-QDs exhibit a highly chiral-selective response toward (1R, 2S)-2-amino-1,2-diphenyl ethanol. It is anticipated that this study will facilitate the construction of smart chiral fluidic sensors. More importantly, (S)-1810-QDs can become an attractive material for chiral separation. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Nonadiabatic geometrical quantum gates in semiconductor quantum dots

    International Nuclear Information System (INIS)

    Solinas, Paolo; Zanghi, Nino; Zanardi, Paolo; Rossi, Fausto

    2003-01-01

    In this paper, we study the implementation of nonadiabatic geometrical quantum gates with in semiconductor quantum dots. Different quantum information enconding (manipulation) schemes exploiting excitonic degrees of freedom are discussed. By means of the Aharanov-Anandan geometrical phase, one can avoid the limitations of adiabatic schemes relying on adiabatic Berry phase; fast geometrical quantum gates can be, in principle, implemented

  15. Highest-order optical phonon-mediated relaxation in CdTe/ZnTe quantum dots

    International Nuclear Information System (INIS)

    Masumoto, Yasuaki; Nomura, Mitsuhiro; Okuno, Tsuyoshi; Terai, Yoshikazu; Kuroda, Shinji; Takita, K.

    2003-01-01

    The highest 19th-order longitudinal optical (LO) phonon-mediated relaxation was observed in photoluminescence excitation spectra of CdTe self-assembled quantum dots grown in ZnTe. Hot excitons photoexcited highly in the ZnTe barrier layer are relaxed into the wetting-layer state by emitting multiple LO phonons of the barrier layer successively. Below the wetting-layer state, the LO phonons involved in the relaxation are transformed to those of interfacial Zn x Cd 1-x Te surrounding CdTe quantum dots. The ZnTe-like and CdTe-like LO phonons of Zn x Cd 1-x Te and lastly acoustic phonons are emitted in the relaxation into the CdTe dots. The observed main relaxation is the fast relaxation directly into CdTe quantum dots and is not the relaxation through either the wetting-layer quantum well or the band bottom of the ZnTe barrier layer. This observation shows very efficient optical phonon-mediated relaxation of hot excitons excited highly in the ZnTe conduction band through not only the ZnTe extended state but also localized state in the CdTe quantum dots reflecting strong exciton-LO phonon interaction of telluride compounds

  16. Ordered quantum-ring chains grown on a quantum-dot superlattice template

    International Nuclear Information System (INIS)

    Wu Jiang; Wang, Zhiming M.; Holmes, Kyland; Marega, Euclydes; Mazur, Yuriy I.; Salamo, Gregory J.

    2012-01-01

    One-dimensional ordered quantum-ring chains are fabricated on a quantum-dot superlattice template by molecular beam epitaxy. The quantum-dot superlattice template is prepared by stacking multiple quantum-dot layers and quantum-ring chains are formed by partially capping quantum dots. Partially capping InAs quantum dots with a thin layer of GaAs introduces a morphological change from quantum dots to quantum rings. The lateral ordering is introduced by engineering the strain field of a multi-layer InGaAs quantum-dot superlattice.

  17. System and method for making quantum dots

    KAUST Repository

    Bakr, Osman; Pan, Jun; El-Ballouli, Ala'a O.; Knudsen, Kristian Rahbek; Abdelhady, Ahmed L.

    2015-01-01

    Embodiments of the present disclosure provide for methods of making quantum dots (QDs) (passivated or unpassivated) using a continuous flow process, systems for making QDs using a continuous flow process, and the like. In one or more embodiments

  18. Electron Transport in Coupled Quantum Dots

    National Research Council Canada - National Science Library

    Antoniadis, D

    1998-01-01

    In the course of the investigation funded by this proposal we fabricated, modeled, and measured a variety of quantum dot structures in order to better understand how such nanostructures might be used for computation...

  19. Synthetic Developments of Nontoxic Quantum Dots.

    Science.gov (United States)

    Das, Adita; Snee, Preston T

    2016-03-03

    Semiconductor nanocrystals, or quantum dots (QDs), are candidates for biological sensing, photovoltaics, and catalysis due to their unique photophysical properties. The most studied QDs are composed of heavy metals like cadmium and lead. However, this engenders concerns over heavy metal toxicity. To address this issue, numerous studies have explored the development of nontoxic (or more accurately less toxic) quantum dots. In this Review, we select three major classes of nontoxic quantum dots composed of carbon, silicon and Group I-III-VI elements and discuss the myriad of synthetic strategies and surface modification methods to synthesize quantum dots composed of these material systems. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Optical Studies of Single Quantum Dots

    National Research Council Canada - National Science Library

    Gammon, Daniel; Steel, Duncan G

    2002-01-01

    ...: the atomlike entities known as quantum dots (QDs). Measuring 1-100 nm across, QDs are semiconductor structures in which the electron wavefunction is confined in all three dimensions by the potential energy barriers that form the QD's boundaries...

  1. Colloidal Quantum Dot Photovoltaics: A Path Forward

    KAUST Repository

    Kramer, Illan J.; Sargent, Edward H.

    2011-01-01

    spectrum. CQD materials' ease of processing derives from their synthesis, storage, and processing in solution. Rapid advances have brought colloidal quantum dot photovoltaic solar power conversion efficiencies of 6% in the latest reports. These achievements

  2. Quantum Dots Coupled to a Superconductor

    DEFF Research Database (Denmark)

    Jellinggaard, Anders Robert

    are tuned electrostatically. This includes tuning the odd occupation of the dot through a quantum phase transition, where it forms a singlet with excitations in the superconductor. We detail the fabrication of these bottom gated devices, which additionally feature ancillary sensor dots connected...

  3. Optical anisotropy in vertically coupled quantum dots

    DEFF Research Database (Denmark)

    Yu, Ping; Langbein, Wolfgang Werner; Leosson, Kristjan

    1999-01-01

    We have studied the polarization of surface and edge-emitted photoluminescence (PL) from structures with vertically coupled In0.5Ga0.5As/GaAs quantum dots (QD's) grown by molecular beam epitaxy. The PL polarization is found to be strongly dependent on the number of stacked layers. While single...... number due to increasing dot size....

  4. Submonolayer Quantum Dot Infrared Photodetector

    Science.gov (United States)

    Ting, David Z.; Bandara, Sumith V.; Gunapala, Sarath D.; Chang, Yia-Chang

    2010-01-01

    A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.

  5. An Investigation of Quantum Dot Super Lattice Use in Nonvolatile Memory and Transistors

    Science.gov (United States)

    Mirdha, P.; Parthasarathy, B.; Kondo, J.; Chan, P.-Y.; Heller, E.; Jain, F. C.

    2018-02-01

    Site-specific self-assembled colloidal quantum dots (QDs) will deposit in two layers only on p-type substrate to form a QD superlattice (QDSL). The QDSL structure has been integrated into the floating gate of a nonvolatile memory component and has demonstrated promising results in multi-bit storage, ease of fabrication, and memory retention. Additionally, multi-valued logic devices and circuits have been created by using QDSL structures which demonstrated ternary and quaternary logic. With increasing use of site-specific self-assembled QDSLs, fundamental understanding of silicon and germanium QDSL charge storage capability, self-assembly on specific surfaces, uniform distribution, and mini-band formation has to be understood for successful implementation in devices. In this work, we investigate the differences in electron charge storage by building metal-oxide semiconductor (MOS) capacitors and using capacitance and voltage measurements to quantify the storage capabilities. The self-assembly process and distribution density of the QDSL is done by obtaining atomic force microscopy (AFM) results on line samples. Additionally, we present a summary of the theoretical density of states in each of the QDSLs.

  6. Fermionic entanglement via quantum walks in quantum dots

    Science.gov (United States)

    Melnikov, Alexey A.; Fedichkin, Leonid E.

    2018-02-01

    Quantum walks are fundamentally different from random walks due to the quantum superposition property of quantum objects. Quantum walk process was found to be very useful for quantum information and quantum computation applications. In this paper we demonstrate how to use quantum walks as a tool to generate high-dimensional two-particle fermionic entanglement. The generated entanglement can survive longer in the presence of depolorazing noise due to the periodicity of quantum walk dynamics. The possibility to create two distinguishable qudits in a system of tunnel-coupled semiconductor quantum dots is discussed.

  7. Semiconductor Quantum Dots with Photoresponsive Ligands.

    Science.gov (United States)

    Sansalone, Lorenzo; Tang, Sicheng; Zhang, Yang; Thapaliya, Ek Raj; Raymo, Françisco M; Garcia-Amorós, Jaume

    2016-10-01

    Photochromic or photocaged ligands can be anchored to the outer shell of semiconductor quantum dots in order to control the photophysical properties of these inorganic nanocrystals with optical stimulations. One of the two interconvertible states of the photoresponsive ligands can be designed to accept either an electron or energy from the excited quantum dots and quench their luminescence. Under these conditions, the reversible transformations of photochromic ligands or the irreversible cleavage of photocaged counterparts translates into the possibility to switch luminescence with external control. As an alternative to regulating the photophysics of a quantum dot via the photochemistry of its ligands, the photochemistry of the latter can be controlled by relying on the photophysics of the former. The transfer of excitation energy from a quantum dot to a photocaged ligand populates the excited state of the species adsorbed on the nanocrystal to induce a photochemical reaction. This mechanism, in conjunction with the large two-photon absorption cross section of quantum dots, can be exploited to release nitric oxide or to generate singlet oxygen under near-infrared irradiation. Thus, the combination of semiconductor quantum dots and photoresponsive ligands offers the opportunity to assemble nanostructured constructs with specific functions on the basis of electron or energy transfer processes. The photoswitchable luminescence and ability to photoinduce the release of reactive chemicals, associated with the resulting systems, can be particularly valuable in biomedical research and can, ultimately, lead to the realization of imaging probes for diagnostic applications as well as to therapeutic agents for the treatment of cancer.

  8. Symmetric analysis, categorization, and optical spectrum of ideal pyramid quantum dots

    Science.gov (United States)

    Li, Wei; Belling, Samuel W.

    2017-11-01

    Self-assembled quantum dots possess an intrinsic geometric symmetry. Applying group representation theory, we systematically analyze the symmetric properties of the bound states for ideal pyramid quantum dots, which neglect band mixing and strain effects. We label each bound state by its symmetry group’s corresponding irreducible representation and define a concept called the quantum dots’ symmetry category. A class of quantum dots with the same irreducible representation sequence of bound states are characterized as belonging to a specific symmetry category. This category concept generally describes the symmetric order of Hilbert space or wavefunction space. We clearly identify the connection between the symmetry category and the geometry of quantum dots by the symmetry category graph or map. The symmetry category change or transition corresponds to an accidental degeneracy of the bound states. The symmetry category and category transition are observable from the photocurrent spectroscopy or optical spectrum. For simplicity’s sake, in this paper, we only focus on inter-subband transition spectra, but the methodology can be extended to the inter-band transition cases. We predict that from the spectral measurements, the quantum dots’ geometric information may be inversely extracted.

  9. Atomically manufactured nickel-silicon quantum dots displaying robust resonant tunneling and negative differential resistance

    Science.gov (United States)

    Cheng, Jian-Yih; Fisher, Brandon L.; Guisinger, Nathan P.; Lilley, Carmen M.

    2017-12-01

    Providing a spin-free host material in the development of quantum information technology has made silicon a very interesting and desirable material for qubit design. Much of the work and experimental progress has focused on isolated phosphorous atoms. In this article, we report on the exploration of Ni-Si clusters that are atomically manufactured via self-assembly from the bottom-up and behave as isolated quantum dots. These small quantum dot structures are probed at the atomic-scale with scanning tunneling microscopy and spectroscopy, revealing robust resonance through discrete quantized energy levels within the Ni-Si clusters. The resonance energy is reproducible and the peak spacing of the quantum dot structures increases as the number of atoms in the cluster decrease. Probing these quantum dot structures on degenerately doped silicon results in the observation of negative differential resistance in both I-V and dI/dV spectra. At higher surface coverage of nickel, a well-known √19 surface modification is observed and is essentially a tightly packed array of the clusters. Spatial conductance maps reveal variations in the local density of states that suggest the clusters are influencing the electronic properties of their neighbors. All of these results are extremely encouraging towards the utilization of metal modified silicon surfaces to advance or complement existing quantum information technology.

  10. Spectroscopy of Charged Quantum Dot Molecules

    Science.gov (United States)

    Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Ponomarev, I. V.; Ware, M. E.; Doty, M. F.; Reinecke, T. L.; Gammon, D.; Korenev, V. L.

    2006-03-01

    Spins of single charges in quantum dots are attractive for many quantum information and spintronic proposals. Scalable quantum information applications require the ability to entangle and operate on multiple spins in coupled quantum dots (CQDs). To further the understanding of these systems, we present detailed spectroscopic studies of InAs CQDs with control of the discrete electron or hole charging of the system. The optical spectrum reveals a pattern of energy anticrossings and crossings in the photoluminescence as a function of applied electric field. These features can be understood as a superposition of charge and spin configurations of the two dots and represent clear signatures of quantum mechanical coupling. The molecular resonance leading to these anticrossings is achieved at different electric fields for the optically excited (trion) states and the ground (hole) states allowing for the possibility of using the excited states for optically induced coupling of the qubits.

  11. Measurement of a heavy-hole hyperfine interaction in InGaAs quantum dots using resonance fluorescence.

    Science.gov (United States)

    Fallahi, P; Yilmaz, S T; Imamoğlu, A

    2010-12-17

    We measure the strength and the sign of hyperfine interaction of a heavy hole with nuclear spins in single self-assembled quantum dots. Our experiments utilize the locking of a quantum dot resonance to an incident laser frequency to generate nuclear spin polarization. By monitoring the resulting Overhauser shift of optical transitions that are split either by electron or exciton Zeeman energy with respect to the locked transition using resonance fluorescence, we find that the ratio of the heavy-hole and electron hyperfine interactions is -0.09 ± 0.02 in three quantum dots. Since hyperfine interactions constitute the principal decoherence source for spin qubits, we expect our results to be important for efforts aimed at using heavy-hole spins in quantum information processing.

  12. Self-assembling peptide semiconductors

    Science.gov (United States)

    Tao, Kai; Makam, Pandeeswar; Aizen, Ruth; Gazit, Ehud

    2017-01-01

    Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems. PMID:29146781

  13. Metamorphic quantum dots: Quite different nanostructures

    International Nuclear Information System (INIS)

    Seravalli, L.; Frigeri, P.; Nasi, L.; Trevisi, G.; Bocchi, C.

    2010-01-01

    In this work, we present a study of InAs quantum dots deposited on InGaAs metamorphic buffers by molecular beam epitaxy. By comparing morphological, structural, and optical properties of such nanostructures with those of InAs/GaAs quantum dot ones, we were able to evidence characteristics that are typical of metamorphic InAs/InGaAs structures. The more relevant are: the cross-hatched InGaAs surface overgrown by dots, the change in critical coverages for island nucleation and ripening, the nucleation of new defects in the capping layers, and the redshift in the emission energy. The discussion on experimental results allowed us to conclude that metamorphic InAs/InGaAs quantum dots are rather different nanostructures, where attention must be put to some issues not present in InAs/GaAs structures, namely, buffer-related defects, surface morphology, different dislocation mobility, and stacking fault energies. On the other hand, we show that metamorphic quantum dot nanostructures can provide new possibilities of tailoring various properties, such as dot positioning and emission energy, that could be very useful for innovative dot-based devices.

  14. Advancements in the Field of Quantum Dots

    Science.gov (United States)

    Mishra, Sambeet; Tripathy, Pratyasha; Sinha, Swami Prasad.

    2012-08-01

    Quantum dots are defined as very small semiconductor crystals of size varying from nanometer scale to a few micron i.e. so small that they are considered dimensionless and are capable of showing many chemical properties by virtue of which they tend to be lead at one minute and gold at the second minute.Quantum dots house the electrons just the way the electrons would have been present in an atom, by applying a voltage. And therefore they are very judiciously given the name of being called as the artificial atoms. This application of voltage may also lead to the modification of the chemical nature of the material anytime it is desired, resulting in lead at one minute to gold at the other minute. But this method is quite beyond our reach. A quantum dot is basically a semiconductor of very tiny size and this special phenomenon of quantum dot, causes the band of energies to change into discrete energy levels. Band gaps and the related energy depend on the relationship between the size of the crystal and the exciton radius. The height and energy between different energy levels varies inversely with the size of the quantum dot. The smaller the quantum dot, the higher is the energy possessed by it.There are many applications of the quantum dots e.g. they are very wisely applied to:Light emitting diodes: LEDs eg. White LEDs, Photovoltaic devices: solar cells, Memory elements, Biology : =biosensors, imaging, Lasers, Quantum computation, Flat-panel displays, Photodetectors, Life sciences and so on and so forth.The nanometer sized particles are able to display any chosen colour in the entire ultraviolet visible spectrum through a small change in their size or composition.

  15. Spectroscopy characterization and quantum yield determination of quantum dots

    International Nuclear Information System (INIS)

    Ortiz, S N Contreras; Ospino, E Mejía; Cabanzo, R

    2016-01-01

    In this paper we show the characterization of two kinds of quantum dots: hydrophilic and hydrophobic, with core and core/shell respectively, using spectroscopy techniques such as UV-Vis, fluorescence and Raman. We determined the quantum yield in the quantum dots using the quinine sulphate as standard. This salt is commonly used because of its quantum yield (56%) and stability. For the CdTe excitation, we used a wavelength of 549nm and for the CdSe/ZnS excitation a wavelength of 527nm. The results show that CdSe/ZnS (49%) has better fluorescence, better quantum dots, and confirm the fluorescence result. The quantum dots have shown a good fluorescence performance, so this property will be used to replace dyes, with the advantage that quantum dots are less toxic than some dyes like the rhodamine. In addition, in this work we show different techniques to find the quantum dots emission: fluorescence spectrum, synchronous spectrum and Raman spectrum. (paper)

  16. Quantum-dot-in-perovskite solids

    KAUST Repository

    Ning, Zhijun; Gong, Xiwen; Comin, Riccardo; Walters, Grant; Fan, Fengjia; Voznyy, Oleksandr; Yassitepe, Emre; Buin, Andrei; Hoogland, Sjoerd; Sargent, Edward H.

    2015-01-01

    © 2015 Macmillan Publishers Limited. All rights reserved. Heteroepitaxy - atomically aligned growth of a crystalline film atop a different crystalline substrate - is the basis of electrically driven lasers, multijunction solar cells, and blue-light-emitting diodes. Crystalline coherence is preserved even when atomic identity is modulated, a fact that is the critical enabler of quantum wells, wires, and dots. The interfacial quality achieved as a result of heteroepitaxial growth allows new combinations of materials with complementary properties, which enables the design and realization of functionalities that are not available in the single-phase constituents. Here we show that organohalide perovskites and preformed colloidal quantum dots, combined in the solution phase, produce epitaxially aligned 'dots-in-a-matrix' crystals. Using transmission electron microscopy and electron diffraction, we reveal heterocrystals as large as about 60 nanometres and containing at least 20 mutually aligned dots that inherit the crystalline orientation of the perovskite matrix. The heterocrystals exhibit remarkable optoelectronic properties that are traceable to their atom-scale crystalline coherence: photoelectrons and holes generated in the larger-bandgap perovskites are transferred with 80% efficiency to become excitons in the quantum dot nanocrystals, which exploit the excellent photocarrier diffusion of perovskites to produce bright-light emission from infrared-bandgap quantum-tuned materials. By combining the electrical transport properties of the perovskite matrix with the high radiative efficiency of the quantum dots, we engineer a new platform to advance solution-processed infrared optoelectronics.

  17. Quantum-dot-in-perovskite solids

    KAUST Repository

    Ning, Zhijun

    2015-07-15

    © 2015 Macmillan Publishers Limited. All rights reserved. Heteroepitaxy - atomically aligned growth of a crystalline film atop a different crystalline substrate - is the basis of electrically driven lasers, multijunction solar cells, and blue-light-emitting diodes. Crystalline coherence is preserved even when atomic identity is modulated, a fact that is the critical enabler of quantum wells, wires, and dots. The interfacial quality achieved as a result of heteroepitaxial growth allows new combinations of materials with complementary properties, which enables the design and realization of functionalities that are not available in the single-phase constituents. Here we show that organohalide perovskites and preformed colloidal quantum dots, combined in the solution phase, produce epitaxially aligned \\'dots-in-a-matrix\\' crystals. Using transmission electron microscopy and electron diffraction, we reveal heterocrystals as large as about 60 nanometres and containing at least 20 mutually aligned dots that inherit the crystalline orientation of the perovskite matrix. The heterocrystals exhibit remarkable optoelectronic properties that are traceable to their atom-scale crystalline coherence: photoelectrons and holes generated in the larger-bandgap perovskites are transferred with 80% efficiency to become excitons in the quantum dot nanocrystals, which exploit the excellent photocarrier diffusion of perovskites to produce bright-light emission from infrared-bandgap quantum-tuned materials. By combining the electrical transport properties of the perovskite matrix with the high radiative efficiency of the quantum dots, we engineer a new platform to advance solution-processed infrared optoelectronics.

  18. Studies of quantum dots in the quantum Hall regime

    Science.gov (United States)

    Goldmann, Eyal

    We present two studies of quantum dots in the quantum Hall regime. In the first study, presented in Chapter 3, we investigate the edge reconstruction phenomenon believed to occur when the quantum dot filling fraction is n≲1 . Our approach involves the examination of large dots (≤40 electrons) using a partial diagonalization technique in which the occupancies of the deep interior orbitals are frozen. To interpret the results of this calculation, we evaluate the overlap between the diagonalized ground state and a set of trial wavefunctions which we call projected necklace (PN) states. A PN state is simply the angular momentum projection of a maximum density droplet surrounded by a ring of localized electrons. Our calculations reveal that PN states have up to 99% overlap with the diagonalized ground states, and are lower in energy than the states identified in Chamon and Wen's study of the edge reconstruction. In the second study, presented in Chapter 4, we investigate quantum dots in the fractional quantum Hall regime using a Hartree formulation of composite fermion theory. We find that under appropriate conditions, the chemical potential of the dots oscillates periodically with B due to the transfer of composite fermions between quasi-Landau bands. This effect is analogous the addition spectrum oscillations which occur in quantum dots in the integer quantum Hall regime. Period f0 oscillations are found in sharply confined dots with filling factors nu = 2/5 and nu = 2/3. Period 3 f0 oscillations are found in a parabolically confined nu = 2/5 dot. More generally, we argue that the oscillation period of dots with band pinning should vary continuously with B, whereas the period of dots without band pinning is f0 .

  19. Nonadiabatic corrections to a quantum dot quantum computer

    Indian Academy of Sciences (India)

    Home; Journals; Pramana – Journal of Physics; Volume 83; Issue 1. Nonadiabatic corrections to a quantum dot quantum computer working in adiabatic limit. M Ávila ... The time of operation of an adiabatic quantum computer must be less than the decoherence time, otherwise the computer would be nonoperative. So far, the ...

  20. Electron Spins in Semiconductor Quantum Dots

    NARCIS (Netherlands)

    Hanson, R.

    2005-01-01

    This thesis describes a series of experiments aimed at understanding and controlling the behavior of the spin degree of freedom of single electrons, confined in semiconductor quantum dots. This research work is motivated by the prospects of using the electron spin as a quantum bit (qubit), the basic

  1. Decoherence processes during optical manipulation of excitonic qubits in semiconductor quantum dots

    Science.gov (United States)

    Wang, Q. Q.; Muller, A.; Bianucci, P.; Rossi, E.; Xue, Q. K.; Takagahara, T.; Piermarocchi, C.; MacDonald, A. H.; Shih, C. K.

    2005-07-01

    Using photoluminescence spectroscopy, we have investigated the nature of Rabi oscillation damping during optical manipulation of excitonic qubits in self-assembled quantum dots. Rabi oscillations were recorded by varying the pulse amplitude for fixed pulse durations between 4ps and 10ps . Up to five periods are visible, making it possible to quantify the excitation dependent damping. We find that this damping is more pronounced for shorter pulse widths and show that its origin is the nonresonant excitation of carriers in the wetting layer, most likely involving bound-to-continuum and continuum-to-bound transitions.

  2. Mapping the Local Density of Optical States of a Photonic Crystal with Single Quantum Dots

    DEFF Research Database (Denmark)

    Wang, Qin; Stobbe, Søren; Lodahl, Peter

    2011-01-01

    We use single self-assembled InGaAs quantum dots as internal probes to map the local density of optical states of photonic crystal membranes. The employed technique separates contributions from nonradiative recombination and spin-flip processes by properly accounting for the role of the exciton...... fine structure. We observe inhibition factors as high as 70 and compare our results to local density of optical states calculations available from the literature, thereby establishing a quantitative understanding of photon emission in photonic crystal membranes. © 2011 American Physical Society....

  3. Dilute nitride InNP quantum dots: Growth and photoluminescence mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Takabayashi, K.; Kamiya, I. [Quantum Interface Laboratory, Toyota Technological Institute, Nagoya 468-8511 (Japan); Sukrittanon, S. [Material Science and Engineering Program, University of California, San Diego, La Jolla, California 92093 (United States); Pan, J. L.; Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

    2014-10-27

    Self-assembled dilute nitride InNP quantum dots (QDs) in GaP matrix grown under the Stranski-Krastanov mode by gas-source molecular beam epitaxy are studied. The N-related localized states inside the InNP QDs provide a spatially direct recombination channel, in contrast to the spatially indirect channel through the strained In(N)P QDs/GaP interface states. The N incorporation into InP QDs therefore causes a blueshift and double-peak features in photoluminescence, which are not observed in other dilute nitride materials.

  4. Hydrostatic pressure effects on impurity states in InAs/GaAs quantum dot

    International Nuclear Information System (INIS)

    Xia Congxin; Liu Yaming; Wei Shuyi

    2008-01-01

    Within the framework of effective-mass approximation, the hydrostatic pressure effects on the donor binding energy of a hydrogenic impurity in InAs/GaAs self-assembled quantum dot(QD) are investigated by means of a variational method. Numerical results show that the donor binding energy increases when the hydrostatic pressure increases for any impurity position and QD size. Moreover, the hydrostatic pressure has a remarkable influence on the donor binding energy for small QD. Realistic cases, including the impurity in the QD and the surrounding barrier, are considered

  5. Dense arrays of ordered pyramidal quantum dots with narrow linewidth photoluminescence spectra

    Energy Technology Data Exchange (ETDEWEB)

    Surrente, A; Gallo, P; Felici, M; Dwir, B; Rudra, A; Kapon, E, E-mail: alessandro.surrente@epfl.c [Laboratory of Physics of Nanostructures, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

    2009-10-14

    Arrays of site-controlled, pyramidal InGaAs/GaAs quantum dots (QDs) grown by organo-metallic chemical vapour deposition with densities comparable to those of self-assembled QDs (5 x 10{sup 9} cm{sup -2}) are demonstrated. The QDs exhibit high quality photoluminescence spectra with inhomogeneous broadening of only 6.5 meV. The QD dipole moment was estimated through the analysis of time-resolved photoluminescence measurements. Such ordered QD arrays should be useful for applications in active nanophotonic systems such as QD lasers, modulators and switches requiring high overlap of the optical modes with the QD active region.

  6. Spectral Barcoding of Quantum Dots: Deciphering Structural Motifs from the Excitonic Spectra

    International Nuclear Information System (INIS)

    Mlinar, V.; Zunger, A.

    2009-01-01

    Self-assembled semiconductor quantum dots (QDs) show in high-resolution single-dot spectra a multitude of sharp lines, resembling a barcode, due to various neutral and charged exciton complexes. Here we propose the 'spectral barcoding' method that deciphers structural motifs of dots by using such barcode as input to an artificial-intelligence learning system. Thus, we invert the common practice of deducing spectra from structure by deducing structure from spectra. This approach (i) lays the foundation for building a much needed structure-spectra understanding for large nanostructures and (ii) can guide future design of desired optical features of QDs by controlling during growth only those structural motifs that decide given optical features.

  7. Site-Control of InAs/GaAs Quantum Dots with Indium-Assisted Deoxidation

    Directory of Open Access Journals (Sweden)

    Sajid Hussain

    2016-03-01

    Full Text Available Site-controlled epitaxial growth of InAs quantum dots on GaAs substrates patterned with periodic nanohole arrays relies on the deterministic nucleation of dots into the holes. In the ideal situation, each hole should be occupied exactly by one single dot, with no nucleation onto planar areas. However, the single-dot occupancy per hole is often made difficult by the fact that lithographically-defined holes are generally much larger than the dots, thus providing several nucleation sites per hole. In addition, deposition of a thin GaAs buffer before the dots tends to further widen the holes in the [110] direction. We have explored a method of native surface oxide removal by using indium beams, which effectively prevents hole elongation along [110] and greatly helps single-dot occupancy per hole. Furthermore, as compared to Ga-assisted deoxidation, In-assisted deoxidation is efficient in completely removing surface contaminants, and any excess In can be easily re-desorbed thermally, thus leaving a clean, smooth GaAs surface. Low temperature photoluminescence showed that inhomogeneous broadening is substantially reduced for QDs grown on In-deoxidized patterns, with respect to planar self-assembled dots.

  8. Coherent coupling of two different semiconductor quantum dots via an optical cavity mode

    Energy Technology Data Exchange (ETDEWEB)

    Laucht, Arne; Villas-Boas, Jose M.; Hauke, Norman; Hofbauer, Felix; Boehm, Gerhard; Kaniber, Michael; Finley, Jonathan J. [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany)

    2010-07-01

    We present a combined experimental and theoretical study of a strongly coupled system consisting of two spatially separated self-assembled InGaAs quantum dots and a single optical nanocavity mode. Due to their different size and strain profile, the two dots exhibit markedly different electric field dependences due to the quantum confined Stark effect. This allows us to tune them into resonance simply by changing the applied bias voltage and to independently tune them into the photonic crystal nanocavity mode. Photoluminescence measurements show a characteristic triple peak during the double anticrossing, which is a clear signature of a coherently coupled system of three quantum states. We fit the emission spectra of the coupled system to theory and are able to investigate the coupling between the two quantum dots directly via the cavity mode. Furthermore, we investigate the coupling between the two quantum dots when they are detuned from the cavity mode in a V-system where dephasing due to incoherent losses from the cavity mode can be reduced.

  9. Coherent coupling of two different semiconductor quantum dots via an optical cavity mode

    Energy Technology Data Exchange (ETDEWEB)

    Villas-Boas, Jose M. [Universidade Federal de Uberlandia (UFU), MG (Brazil). Inst. de Fisica; Laucht, Arne; Hauke, Norman; Hofbauer, Felix; Boehm, Gerhard; Kaniber, Michael; Finley, Jonathan J. [Technische Universitaet Muenchen, Garching (Germany). Walter Schottky Inst.

    2011-07-01

    Full text. We present a combined experimental and theoretical study of a strongly coupled system consisting of two spatially separated self-assembled InGaAs quantum dots and a single optical nano cavity mode. Due to their different size and strain profile, the two dots exhibit markedly different electric field dependences due to the quantum confined Stark effect. This allows us to tune them into resonance simply by changing the applied bias voltage and to independently tune them into the photonic crystal nano cavity mode. Photoluminescence measurements show a characteristic triple peak during the double anti crossing, which is a clear signature of a coherently coupled system of three quantum states. We fit the emission spectra of the coupled system to theory and are able to investigate the coupling between the two quantum dots directly via the cavity mode. Furthermore, we investigate the coupling between the two quantum dots when they are detuned from the cavity mode in a V-system where dephasing due to incoherent losses from the cavity mode can be reduced

  10. Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

    International Nuclear Information System (INIS)

    Wu, Jiang; Chen, Siming; Seeds, Alwyn; Liu, Huiyun

    2015-01-01

    Nanometre-scale semiconductor devices have been envisioned as next-generation technologies with high integration and functionality. Quantum dots, or the so-called ‘artificial atoms’, exhibit unique properties due to their quantum confinement in all 3D. These unique properties have brought to light the great potential of quantum dots in optoelectronic applications. Numerous efforts worldwide have been devoted to these promising nanomaterials for next-generation optoelectronic devices, such as lasers, photodetectors, amplifiers, and solar cells, with the emphasis on improving performance and functionality. Through the development in optoelectronic devices based on quantum dots over the last two decades, quantum dot devices with exceptional performance surpassing previous devices are evidenced. This review describes recent developments in quantum dot optoelectronic devices over the last few years. The paper will highlight the major progress made in 1.3 μm quantum dot lasers, quantum dot infrared photodetectors, and quantum dot solar cells. (topical review)

  11. Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II-VI Tunnel Insulators

    Science.gov (United States)

    Suarez, E.; Gogna, M.; Al-Amoody, F.; Karmakar, S.; Ayers, J.; Heller, E.; Jain, F.

    2010-07-01

    This paper presents preliminary data on quantum dot gate nonvolatile memories using nearly lattice-matched ZnS/Zn0.95Mg0.05S/ZnS tunnel insulators. The GeO x -cladded Ge and SiO x -cladded Si quantum dots (QDs) are self-assembled site-specifically on the II-VI insulator grown epitaxially over the Si channel (formed between the source and drain region). The pseudomorphic II-VI stack serves both as a tunnel insulator and a high- κ dielectric. The effect of Mg incorporation in ZnMgS is also investigated. For the control gate insulator, we have used Si3N4 and SiO2 layers grown by plasma- enhanced chemical vapor deposition.

  12. Effect of the depolarization field on coherent optical properties in semiconductor quantum dots

    Science.gov (United States)

    Mitsumori, Yasuyoshi; Watanabe, Shunta; Asakura, Kenta; Seki, Keisuke; Edamatsu, Keiichi; Akahane, Kouichi; Yamamoto, Naokatsu

    2018-06-01

    We study the photon echo spectrum of self-assembled semiconductor quantum dots using femtosecond light pulses. The spectrum shape changes from a single-peaked to a double-peaked structure as the time delay between the two excitation pulses is increased. The spectrum change is reproduced by numerical calculations, which include the depolarization field induced by the biexciton-exciton transition as well as the conventional local-field effect for the exciton-ground-state transition in a quantum dot. Our findings suggest that various optical transitions in tightly localized systems generate a depolarization field, which renormalizes the resonant frequency with a change in the polarization itself, leading to unique optical properties.

  13. Formation of quantum wires and dots on InP(001) by As/P exchange

    International Nuclear Information System (INIS)

    Yang, Haeyeon; Ballet, P.; Salamo, G. J.

    2001-01-01

    We report on the use of in situ scanning tunneling microscopy to study As/P exchange on InP(001) surfaces by molecular beam epitaxy. Results demonstrate that the exchange process can be controlled to selectively produce either quantum wires or quantum dots. 15 nm wide self-assembled nanowires are observed, and they are elongated along the dimer row direction of the InP(001)-2x4 surface with a length of over 1 μm and flat top 2x4 surfaces. In addition, when the nanowires are annealed with no arsenic overpressure, the surface reconstruction transforms from 2x4 to 4x2 and the nanowires transform into dots with a rectangular base and flat top. [copyright] 2001 American Institute of Physics

  14. Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II-VI Gate Insulators

    Science.gov (United States)

    Jain, F. C.; Suarez, E.; Gogna, M.; Alamoody, F.; Butkiewicus, D.; Hohner, R.; Liaskas, T.; Karmakar, S.; Chan, P.-Y.; Miller, B.; Chandy, J.; Heller, E.

    2009-08-01

    This paper presents the successful use of ZnS/ZnMgS and other II-VI layers (lattice-matched or pseudomorphic) as high- k gate dielectrics in the fabrication of quantum dot (QD) gate Si field-effect transistors (FETs) and nonvolatile memory structures. Quantum dot gate FETs and nonvolatile memories have been fabricated in two basic configurations: (1) monodispersed cladded Ge nanocrystals (e.g., GeO x -cladded-Ge quantum dots) site-specifically self-assembled over the lattice-matched ZnMgS gate insulator in the channel region, and (2) ZnTe-ZnMgTe quantum dots formed by self-organization, using metalorganic chemical vapor-phase deposition (MOCVD), on ZnS-ZnMgS gate insulator layers grown epitaxially on Si substrates. Self-assembled GeO x -cladded Ge QD gate FETs, exhibiting three-state behavior, are also described. Preliminary results on InGaAs-on-InP FETs, using ZnMgSeTe/ZnSe gate insulator layers, are presented.

  15. Bound states in continuum: Quantum dots in a quantum well

    Energy Technology Data Exchange (ETDEWEB)

    Prodanović, Nikola, E-mail: elnpr@leeds.ac.uk [Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds LS2 9JT (United Kingdom); Milanović, Vitomir [School of Electrical Engineering, University of Belgrade, Bulevar Kralja Aleksandra 73, 11000 Belgrade (Serbia); Ikonić, Zoran; Indjin, Dragan; Harrison, Paul [Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds LS2 9JT (United Kingdom)

    2013-11-01

    We report on the existence of a bound state in the continuum (BIC) of quantum rods (QR). QRs are novel elongated InGaAs quantum dot nanostructures embedded in the shallower InGaAs quantum well. BIC appears as an excited confined dot state and energetically above the bottom of a well subband continuum. We prove that high height-to-diameter QR aspect ratio and the presence of a quantum well are indispensable conditions for accommodating the BIC. QRs are unique semiconductor nanostructures, exhibiting this mathematical curiosity predicted 83 years ago by Wigner and von Neumann.

  16. Photophysical properties of CdSe quantum dot self-assemblies with zinc phthalocyanines and azaphthalocyanines

    Czech Academy of Sciences Publication Activity Database

    Suchánek, Jan; Lang, Kamil; Nováková, V.; Zimčík, P.; Zelinger, Zdeněk; Kubát, Pavel

    2013-01-01

    Roč. 12, č. 5 (2013), s. 743-750 ISSN 1474-905X R&D Projects: GA ČR GAP208/10/1678 Institutional support: RVO:61388955 ; RVO:61388980 Keywords : photodynamic therapy * fluorescence spectra * singlet oxygen Subject RIV: CF - Physical ; Theoretical Chemistry; CA - Inorganic Chemistry (UACH-T) Impact factor: 2.939, year: 2013

  17. Raman study of strain in GaN/AlN quantum dot multilayered structures

    Energy Technology Data Exchange (ETDEWEB)

    Cros, A.; Garro, N.; Llorens, J.M.; Garcia-Cristobal, A.; Cantarero, A. [Institut de Ciencia dels Materials, Universitat de Valencia, 46071 Valencia (Spain); Gogneau, N.; Monroy, E.; Daudin, B. [CEA-CNRS Group, ' ' Nanophysique et Semiconducteurs' ' , Departement de la Recherche Fondamentale sur la Matiere Condensee, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble Cedex 9 (France)

    2005-05-01

    Raman spectroscopy has been used to investigate self-assembled stacks of GaN/AlN quantum dots with increasing number of periods. The E{sub 2H} phonon modes associated to GaN and AlN are clearly resolved with visible excitation, and their energies allow the simultaneous monitoring of the dot and barrier strain states. The compression of the quantum dots is evidenced by a shift of the E{sub 2H} phonon mode of circa 29 cm{sup -1} to higher energies with respect to its relaxed value. The strain of the AlN spacer is found to be correlated to that of the dot, with an increase in its tensile component for the samples with fewer periods and a partial relaxation for samples over 50 periods. Additionally, resonant effects of the A{sub 1}(LO) phonon mode have been investigated by tuning the excitation over a wide range in the ultra-violet region. A discussion of the strain distribution in quantum dots and spacers as a function of the number of periods is performed by means of a theoretical calculation based on the method of inclusions. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Numerical simulation of electronic properties of coupled quantum dots on wetting layers

    International Nuclear Information System (INIS)

    Betcke, M M; Voss, H

    2008-01-01

    Self-assembled quantum dots are grown on wetting layers and frequently in an array-like assembly of many similar but not exactly equal dots. Nevertheless, most simulations disregard these structural conditions and restrict themselves to simulating a pure single quantum dot. For reasons of numerical efficiency we advocate the effective one-band Hamiltonian with energy- and position-dependent effective mass approximation and a finite height hard-wall 3D confinement potential for computation of the energy levels of the electrons in the conduction band. Within this model we investigate the geometrical effects mentioned above on the electronic structure of a pyramidal InAs quantum dot embedded in a GaAs matrix. We find that the presence of a wetting layer may affect the electronic structure noticeably. Furthermore, we establish that, in spite of the large bandgap of the InAs/GaAs heterostructure, if the dots in a vertically aligned array are sufficiently close stacked there is considerable interaction between their eigenfunctions. Moreover, the eigenfunctions of such an array are quite sensitive to certain structural perturbations

  19. Scalable quantum computer architecture with coupled donor-quantum dot qubits

    Science.gov (United States)

    Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey

    2014-08-26

    A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.

  20. Surface treatment of nanocrystal quantum dots after film deposition

    Science.gov (United States)

    Sykora, Milan; Koposov, Alexey; Fuke, Nobuhiro

    2015-02-03

    Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.

  1. Inorganic passivation and doping control in colloidal quantum dot photovoltaics

    KAUST Repository

    Hoogland, Sjoerd H.; Ip, Alex; Thon, Susanna; Voznyy, Oleksandr; Tang, Jiang; Liu, Huan; Zhitomirsky, David; Debnath, Ratan K.; Levina, Larissa; Rollny, Lisa R.; Fischer, Armin H.; Kemp, Kyle W.; Kramer, Illan J.; Ning, Zhijun; Labelle, André J.; Chou, Kang Wei; Amassian, Aram; Sargent, E. H.

    2012-01-01

    We discuss strategies to reduce midgap trap state densities in colloidal quantum dot films and requirements to control doping type and magnitude. We demonstrate that these improvements result in colloidal quantum dot solar cells with certified 7.0% efficiency.

  2. Quantum Dot Systems: a versatile platform for quantum simulations

    International Nuclear Information System (INIS)

    Barthelemy, Pierre; Vandersypen, Lieven M.K.

    2013-01-01

    Quantum mechanics often results in extremely complex phenomena, especially when the quantum system under consideration is composed of many interacting particles. The states of these many-body systems live in a space so large that classical numerical calculations cannot compute them. Quantum simulations can be used to overcome this problem: complex quantum problems can be solved by studying experimentally an artificial quantum system operated to simulate the desired hamiltonian. Quantum dot systems have shown to be widely tunable quantum systems, that can be efficiently controlled electrically. This tunability and the versatility of their design makes them very promising quantum simulators. This paper reviews the progress towards digital quantum simulations with individually controlled quantum dots, as well as the analog quantum simulations that have been performed with these systems. The possibility to use large arrays of quantum dots to simulate the low-temperature Hubbard model is also discussed. The main issues along that path are presented and new ideas to overcome them are proposed. (copyright 2013 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Distributed quantum information processing via quantum dot spins

    International Nuclear Information System (INIS)

    Jun, Liu; Qiong, Wang; Le-Man, Kuang; Hao-Sheng, Zeng

    2010-01-01

    We propose a scheme to engineer a non-local two-qubit phase gate between two remote quantum-dot spins. Along with one-qubit local operations, one can in principal perform various types of distributed quantum information processing. The scheme employs a photon with linearly polarisation interacting one after the other with two remote quantum-dot spins in cavities. Due to the optical spin selection rule, the photon obtains a Faraday rotation after the interaction process. By measuring the polarisation of the final output photon, a non-local two-qubit phase gate between the two remote quantum-dot spins is constituted. Our scheme may has very important applications in the distributed quantum information processing

  4. Coherent transport through interacting quantum dots

    International Nuclear Information System (INIS)

    Hiltscher, Bastian

    2012-01-01

    The present thesis is composed of four different works. All deal with coherent transport through interacting quantum dots, which are tunnel-coupled to external leads. There a two main motivations for the use of quantum dots. First, they are an ideal device to study the influence of strong Coulomb repulsion, and second, their discrete energy levels can easily be tuned by external gate electrodes to create different transport regimes. The expression of coherence includes a very wide range of physical correlations and, therefore, the four works are basically independent of each other. Before motivating and introducing the different works in more detail, we remark that in all works a diagrammatic real-time perturbation theory is used. The fermionic degrees of freedom of the leads are traced out and the elements of the resulting reduced density matrix can be treated explicitly by means of a generalized master equation. How this equation is solved, depends on the details of the problem under consideration. In the first of the four works adiabatic pumping through an Aharonov-Bohm interferometer with a quantum dot embedded in each of the two arms is studied. In adiabatic pumping transport is generated by varying two system parameters periodically in time. We consider the two dot levels to be these two pumping parameters. Since they are located in different arms of the interferometer, pumping is a quantum mechanical effect purely relying on coherent superpositions of the dot states. It is very challenging to identify a quantum pumping mechanism in experiments, because a capacitive coupling of the gate electrodes to the leads may yield an undesired AC bias voltage, which is rectified by a time dependent conductance. Therefore, distinguishing features of these two transport mechanisms are required. We find that the dependence on the magnetic field is the key feature. While the pumped charge is an odd function of the magnetic flux, the rectified current is even, at least in

  5. Coherent transport through interacting quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Hiltscher, Bastian

    2012-10-05

    The present thesis is composed of four different works. All deal with coherent transport through interacting quantum dots, which are tunnel-coupled to external leads. There a two main motivations for the use of quantum dots. First, they are an ideal device to study the influence of strong Coulomb repulsion, and second, their discrete energy levels can easily be tuned by external gate electrodes to create different transport regimes. The expression of coherence includes a very wide range of physical correlations and, therefore, the four works are basically independent of each other. Before motivating and introducing the different works in more detail, we remark that in all works a diagrammatic real-time perturbation theory is used. The fermionic degrees of freedom of the leads are traced out and the elements of the resulting reduced density matrix can be treated explicitly by means of a generalized master equation. How this equation is solved, depends on the details of the problem under consideration. In the first of the four works adiabatic pumping through an Aharonov-Bohm interferometer with a quantum dot embedded in each of the two arms is studied. In adiabatic pumping transport is generated by varying two system parameters periodically in time. We consider the two dot levels to be these two pumping parameters. Since they are located in different arms of the interferometer, pumping is a quantum mechanical effect purely relying on coherent superpositions of the dot states. It is very challenging to identify a quantum pumping mechanism in experiments, because a capacitive coupling of the gate electrodes to the leads may yield an undesired AC bias voltage, which is rectified by a time dependent conductance. Therefore, distinguishing features of these two transport mechanisms are required. We find that the dependence on the magnetic field is the key feature. While the pumped charge is an odd function of the magnetic flux, the rectified current is even, at least in

  6. Biological sensing and control of emission dynamics of quantum dot bioconjugates using arrays of long metallic nanorods.

    Science.gov (United States)

    Sadeghi, Seyed M; Gutha, Rithvik R; Wing, Waylin J; Sharp, Christina; Capps, Lucas; Mao, Chuanbin

    2017-01-01

    We study biological sensing using plasmonic and photonic-plasmonic resonances of arrays of ultralong metallic nanorods and analyze the impact of these resonances on emission dynamics of quantum dot bioconjugates. We demonstrate that the LSPRs and plasmonic lattice modes of such array can be used to detect a single self-assembled monolayer of alkanethiol at the visible (550 nm) and near infrared (770 nm) range with well resolved shifts. We study adsorption of streptavidin-quantum dot conjugates to this monolayer, demonstrating that formation of nearly two dimensional arrays of quantum dots with limited emission blinking can lead to extra well-defined wavelength shifts in these modes. Using spectrally-resolved lifetime measurements we study the emission dynamics of such quantum dot bioconjugates within their monodispersed size distribution. We show that, despite their close vicinity to the nanorods, the rate of energy transfer from these quantum dots to nanorods is rather weak, while the plasmon field enhancement can be strong. Our results reveal that the nanorods present a strongly wavelength or size-dependent non-radiative decay channel to the quantum dot bioconjugates.

  7. Carbon quantum dots and a method of making the same

    Science.gov (United States)

    Zidan, Ragaiy; Teprovich, Joseph A.; Washington, Aaron L.

    2017-08-22

    The present invention is directed to a method of preparing a carbon quantum dot. The carbon quantum dot can be prepared from a carbon precursor, such as a fullerene, and a complex metal hydride. The present invention also discloses a carbon quantum dot made by reacting a carbon precursor with a complex metal hydride and a polymer containing a carbon quantum dot made by reacting a carbon precursor with a complex metal hydride.

  8. Carrier transfer in vertically stacked quantum ring-quantum dot chains

    Energy Technology Data Exchange (ETDEWEB)

    Mazur, Yu. I., E-mail: ymazur@uark.edu; Dorogan, V. G.; Benamara, M.; Salamo, G. J. [Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Lopes-Oliveira, V.; Lopez-Richard, V.; Teodoro, M. D.; Marques, G. E. [Departamento de Fisica, Universidade Federal de São Carlos, 13565-905 São Carlos, São Paulo (Brazil); Souza, L. D. de [Departamento de Fisica, Universidade Federal de São Carlos, 13565-905 São Carlos, São Paulo (Brazil); Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Wu, J.; Wang, Z. M. [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu (China); Tarasov, G. G. [Institute of Semiconductor Physics, National Academy of Sciences, pr. Nauki 45, Kiev 03028 (Ukraine); Marega, E. [Instituto de Fisica de São Carlos, Universidade de São Paulo, 13.566-590 São Carlos, São Paulo (Brazil)

    2015-04-21

    The interplay between structural properties and charge transfer in self-assembled quantum ring (QR) chains grown by molecular beam epitaxy on top of an InGaAs/GaAs quantum dot (QD) superlattice template is analyzed and characterized. The QDs and QRs are vertically stacked and laterally coupled as well as aligned within each layer due to the strain field distributions that governs the ordering. The strong interdot coupling influences the carrier transfer both along as well as between chains in the ring layer and dot template structures. A qualitative contrast between different dynamic models has been developed. By combining temperature and excitation intensity effects, the tuning of the photoluminescence gain for either the QR or the QD mode is attained. The information obtained here about relaxation parameters, energy scheme, interlayer and interdot coupling resulting in creation of 1D structures is very important for the usage of such specific QR–QD systems for applied purposes such as lasing, detection, and energy-harvesting technology of future solar panels.

  9. Bright infrared LEDs based on colloidal quantum-dots

    KAUST Repository

    Sun, Liangfeng; Choi, Joshua J.; Stachnik, David; Bartnik, Adam C.; Hyun, Byung-Ryool; Malliaras, George G.; Hanrath, Tobias; Wise, Frank W.

    2013-01-01

    Record-brightness infrared LEDs based on colloidal quantum-dots have been achieved through control of the spacing between adjacent quantum-dots. By tuning the size of quantum-dots, the emission wavelengths can be tuned between 900nm and 1650nm. © 2013 Materials Research Society.

  10. Double quantum dot as a minimal thermoelectric generator

    OpenAIRE

    Donsa, S.; Andergassen, S.; Held, K.

    2014-01-01

    Based on numerical renormalization group calculations, we demonstrate that experimentally realized double quantum dots constitute a minimal thermoelectric generator. In the Kondo regime, one quantum dot acts as an n-type and the other one as a p-type thermoelectric device. Properly connected the double quantum dot provides a miniature power supply utilizing the thermal energy of the environment.

  11. Optical localization of quantum dots in tapered nanowires

    DEFF Research Database (Denmark)

    Østerkryger, Andreas Dyhl; Gregersen, Niels; Fons, Romain

    2017-01-01

    In this work we have measured the far-field emission patterns of In As quantum dots embedded in a GaAs tapered nanowire and used an open-geometry Fourier modal method for determining the radial position of the quantum dots by computing the far-field emission pattern for different quantum dot...

  12. Quantum dot-induced viral capsid assembling in dissociation buffer

    Directory of Open Access Journals (Sweden)

    Gao D

    2013-06-01

    Full Text Available Ding Gao,1,2 Zhi-Ping Zhang,1 Feng Li,3 Dong Men,1 Jiao-Yu Deng,1 Hong-Ping Wei,1 Xian-En Zhang,1 Zong-Qiang Cui1 1State Key Laboratory of Virology, Wuhan Institute of Virology, Chinese Academy of Sciences, Wuhan, 2Graduate University of Chinese Academy of Sciences, Beijing, 3Division of Nanobiomedicine and i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, People's Republic of China Abstract: Viruses encapsulating inorganic nanoparticles are a novel type of nanostructure with applications in biomedicine and biosensors. However, the encapsulation and assembly mechanisms of these hybridized virus-based nanoparticles (VNPs are still unknown. In this article, it was found that quantum dots (QDs can induce simian virus 40 (SV40 capsid assembly in dissociation buffer, where viral capsids should be disassembled. The analysis of the transmission electron microscope, dynamic light scattering, sucrose density gradient centrifugation, and cryo-electron microscopy single particle reconstruction experimental results showed that the SV40 major capsid protein 1 (VP1 can be assembled into ≈25 nm capsids in the dissociation buffer when QDs are present and that the QDs are encapsulated in the SV40 capsids. Moreover, it was determined that there is a strong affinity between QDs and the SV40 VP1 proteins (KD = 2.19E-10 M, which should play an important role in QD encapsulation in the SV40 viral capsids. This study provides a new understanding of the assembly mechanism of SV40 virus-based nanoparticles with QDs, which may help in the design and construction of other similar virus-based nanoparticles. Keywords: quantum dots, simian virus 40, self-assembly, encapsulation, virus-based nanoparticles

  13. Circular polarization memory in single Quantum Dots

    International Nuclear Information System (INIS)

    Khatsevich, S.; Poem, E.; Benny, Y.; Marderfeld, I.; Gershoni, D.; Badolato, A.; Petroff, P. M.

    2010-01-01

    Under quasi-resonant circularly polarized optical excitation, charged quantum dots may emit polarized light. We measured various transitions with either positive, negative or no circular-polarization memory. We explain these observations and quantitatively calculate the polarization spectrum. Our model use the full configuration-interaction method, including the electron-hole exchange interaction, for calculating the quantum dot's confined many-carrier states, along with one assumption regarding the spin relaxation of photoexcited carriers: Electrons maintain their initial spin polarization, while holes do not.

  14. Bilayer graphene quantum dot defined by topgates

    Energy Technology Data Exchange (ETDEWEB)

    Müller, André; Kaestner, Bernd; Hohls, Frank; Weimann, Thomas; Pierz, Klaus; Schumacher, Hans W., E-mail: hans.w.schumacher@ptb.de [Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany)

    2014-06-21

    We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK, the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hopping and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature range. We use this method to define a quantum dot structure in bilayer graphene showing Coulomb blockade oscillations consistent with the gate layout.

  15. Growth and characterization of InP/In0.48Ga0.52P quantum dots optimized for single-photon emission

    International Nuclear Information System (INIS)

    Ugur, Asli

    2012-01-01

    In this work the growth of self-assembled InP/InGaP quantum dots, as well as their optical and structural properties are presented and discussed. The QDs were grown on In 0.48 Ga 0.52 P, lattice matched to GaAs. Self-assembled InP quantum dots are grown using gas-source molecular beam epitaxy over a wide range of InP deposition rates, using an ultra-low growth rate of about 0.01 atomic monolayers/s, a quantum-dot density of 1 dot/μm 2 is realized. The resulting isolated InP quantum dots are individually characterized without the need for lithographical patterning and masks on the substrate. Both excitonic and biexcitonic emissions are observed from single dots, appearing as doublets with a fine-structure splitting of 320 μeV. Hanbury Brown-Twiss correlation measurements for the excitonic emission under cw excitation show anti-bunching behavior with an autocorrelation value of g (2) (0)=0.2. This system is applicable as a single-photon source for applications such as quantum cryptography. The formation of well-ordered chains of InP quantum dots on GaAs (001) substrates by using self-organized In 0.48 Ga 0.52 P surface undulations as a template is also demonstrated. The ordering requires neither stacked layers of quantum dots nor substrate misorientation. The structures are investigated by polarization-dependent photoluminescence together with transmission electron microscopy. Luminescence from the In 0.48 Ga 0.52 P matrix is polarized in one crystallographic direction due to anisotropic strain arising from a lateral compositional modulation. The photoluminescence measurements show enhanced linear polarization in the alignment direction of quantum dots. A polarization degree of 66% is observed. The optical anisotropy is achieved with a straightforward heterostructure, requiring only a single layer of QDs.

  16. Nonadiabatic corrections to a quantum dot quantum computer ...

    Indian Academy of Sciences (India)

    2014-07-02

    Jul 2, 2014 ... corrections in it. If the decoherence times of a quantum dot computer are ∼100 ns [J M Kikkawa and D D Awschalom, Phys. Rev. Lett. 80, 4313 (1998)] then the predicted number of one qubit gate (primitive) operations of the Loss–DiVincenzo quantum computer in such an interval of time must be >1010.

  17. High resolution STEM of quantum dots and quantum wires

    DEFF Research Database (Denmark)

    Kadkhodazadeh, Shima

    2013-01-01

    This article reviews the application of high resolution scanning transmission electron microscopy (STEM) to semiconductor quantum dots (QDs) and quantum wires (QWRs). Different imaging and analytical techniques in STEM are introduced and key examples of their application to QDs and QWRs...

  18. Quantum Dots in Photonic Crystal Waveguides

    DEFF Research Database (Denmark)

    Sollner, Immo Nathanael

    This Thesis is focused on the study of quantum electrodynamics in photonic crystal waveguides. We investigate the interplay between a single quantum dot and the fundamental mode of the photonic crystal waveguide. We demonstrate experimental coupling eciencies for the spontaneous emission...... into the mode exceeding 98% for emitters spectrally close to the band-edge of the waveguide mode. In addition we illustrate the broadband nature of the underlying eects, by obtaining coupling eciencies above 90% for quantum dots detuned from the band edge by as far as 20nm. These values are in good agreement...... with numerical simulations. Such a high coupling eciency implies that the system can be considered an articial 1D-atom, and we theoretically show that this system can generate strong photon-photon interaction, which is an essential functionality for deterministic optical quantum information processing. We...

  19. Dynamic localization in quantum dots: Analytical theory

    International Nuclear Information System (INIS)

    Basko, D.M.; Skvortsov, M.A.; Kravtsov, V.E.

    2003-02-01

    We analyze the response of a complex quantum-mechanical system (e.g., a quantum dot) to a time-dependent perturbation φ(t). Assuming the dot to be described by random matrix theory for GOE we find the quantum correction to the energy absorption rate as a function of the dephasing time t φ . If φ(t) is a sum of d harmonics with incommensurate frequencies, the correction behaves similarly to that to the conductivity δσ d (t φ ) in the d-dimensional Anderson model of the orthogonal symmetry class. For a generic periodic perturbation the leading quantum correction is absent as in the systems of the unitary symmetry class, unless φ(-t+τ)=φ(t+τ) for some τ, which falls into the quasi-1d orthogonal universality class. (author)

  20. Magnetic control of dipolaritons in quantum dots

    International Nuclear Information System (INIS)

    Rojas-Arias, J S; Vinck-Posada, H; Rodríguez, B A

    2016-01-01

    Dipolaritons are quasiparticles that arise in coupled quantum wells embedded in a microcavity, they are a superposition of a photon, a direct exciton and an indirect exciton. We propose the existence of dipolaritons in a system of two coupled quantum dots inside a microcavity in direct analogy with the quantum well case and find that, despite some similarities, dipolaritons in quantum dots have different properties and can lead to true dark polariton states. We use a finite system theory to study the effects of the magnetic field on the system, including the emission, and find that it can be used as a control parameter of the properties of excitons and dipolaritons, and the overall magnetic behaviour of the structure. (paper)

  1. Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth

    International Nuclear Information System (INIS)

    Romanov, V. V.; Dement’ev, P. A.; Moiseev, K. D.

    2016-01-01

    Indium-antimonide quantum dots (7–9 × 10"9 cm"2) are produced on an InAs(001) substrate by metal-organic vapor-phase epitaxy at a temperature of T = 440°C. Epitaxial deposition occurred simultaneously onto an InAs binary matrix and an InAsSbP quaternary alloy matrix layer lattice-matched to the InAs substrate in terms of the lattice parameter. Transformation of the quantum-dot shape and size is studied in relation to the chemical composition of the working matrix surface, onto which the quantum dots are deposited. The use of a multicomponent layer makes it possible to control the lattice parameter of the matrix and the strains produced in the system during the formation of self-assembled quantum dots.

  2. Open quantum spin systems in semiconductor quantum dots and atoms in optical lattices

    Energy Technology Data Exchange (ETDEWEB)

    Schwager, Heike

    2012-07-04

    In this Thesis, we study open quantum spin systems from different perspectives. The first part is motivated by technological challenges of quantum computation. An important building block for quantum computation and quantum communication networks is an interface between material qubits for storage and data processing and travelling photonic qubits for communication. We propose the realisation of a quantum interface between a travelling-wave light field and the nuclear spins in a quantum dot strongly coupled to a cavity. Our scheme is robust against cavity decay as it uses the decay of the cavity to achieve the coupling between nuclear spins and the travelling-wave light fields. A prerequiste for such a quantum interface is a highly polarized ensemble of nuclear spins. High polarization of the nuclear spin ensemble is moreover highly desirable as it protects the potential electron spin qubit from decoherence. Here we present the theoretical description of an experiment in which highly asymmetric dynamic nuclear spin pumping is observed in a single self-assembled InGaAs quantum dot. The second part of this Thesis is devoted to fundamental studies of dissipative spin systems. We study general one-dimensional spin chains under dissipation and propose a scheme to realize a quantum spin system using ultracold atoms in an optical lattice in which both coherent interaction and dissipation can be engineered and controlled. This system enables the study of non-equilibrium and steady state physics of open and driven spin systems. We find, that the steady state expectation values of different spin models exhibit discontinuous behaviour at degeneracy points of the Hamiltonian in the limit of weak dissipation. This effect can be used to dissipatively probe the spectrum of the Hamiltonian. We moreover study spin models under the aspect of state preparation and show that dissipation drives certain spin models into highly entangled state. Finally, we study a spin chain with

  3. Open quantum spin systems in semiconductor quantum dots and atoms in optical lattices

    International Nuclear Information System (INIS)

    Schwager, Heike

    2012-01-01

    In this Thesis, we study open quantum spin systems from different perspectives. The first part is motivated by technological challenges of quantum computation. An important building block for quantum computation and quantum communication networks is an interface between material qubits for storage and data processing and travelling photonic qubits for communication. We propose the realisation of a quantum interface between a travelling-wave light field and the nuclear spins in a quantum dot strongly coupled to a cavity. Our scheme is robust against cavity decay as it uses the decay of the cavity to achieve the coupling between nuclear spins and the travelling-wave light fields. A prerequiste for such a quantum interface is a highly polarized ensemble of nuclear spins. High polarization of the nuclear spin ensemble is moreover highly desirable as it protects the potential electron spin qubit from decoherence. Here we present the theoretical description of an experiment in which highly asymmetric dynamic nuclear spin pumping is observed in a single self-assembled InGaAs quantum dot. The second part of this Thesis is devoted to fundamental studies of dissipative spin systems. We study general one-dimensional spin chains under dissipation and propose a scheme to realize a quantum spin system using ultracold atoms in an optical lattice in which both coherent interaction and dissipation can be engineered and controlled. This system enables the study of non-equilibrium and steady state physics of open and driven spin systems. We find, that the steady state expectation values of different spin models exhibit discontinuous behaviour at degeneracy points of the Hamiltonian in the limit of weak dissipation. This effect can be used to dissipatively probe the spectrum of the Hamiltonian. We moreover study spin models under the aspect of state preparation and show that dissipation drives certain spin models into highly entangled state. Finally, we study a spin chain with

  4. Silicon based quantum dot hybrid qubits

    Science.gov (United States)

    Kim, Dohun

    2015-03-01

    The charge and spin degrees of freedom of an electron constitute natural bases for constructing quantum two level systems, or qubits, in semiconductor quantum dots. The quantum dot charge qubit offers a simple architecture and high-speed operation, but generally suffers from fast dephasing due to strong coupling of the environment to the electron's charge. On the other hand, quantum dot spin qubits have demonstrated long coherence times, but their manipulation is often slower than desired for important future applications. This talk will present experimental progress of a `hybrid' qubit, formed by three electrons in a Si/SiGe double quantum dot, which combines desirable characteristics (speed and coherence) in the past found separately in qubits based on either charge or spin degrees of freedom. Using resonant microwaves, we first discuss qubit operations near the `sweet spot' for charge qubit operation. Along with fast (>GHz) manipulation rates for any rotation axis on the Bloch sphere, we implement two independent tomographic characterization schemes in the charge qubit regime: traditional quantum process tomography (QPT) and gate set tomography (GST). We also present resonant qubit operations of the hybrid qubit performed on the same device, DC pulsed gate operations of which were recently demonstrated. We demonstrate three-axis control and the implementation of dynamic decoupling pulse sequences. Performing QPT on the hybrid qubit, we show that AC gating yields π rotation process fidelities higher than 93% for X-axis and 96% for Z-axis rotations, which demonstrates efficient quantum control of semiconductor qubits using resonant microwaves. We discuss a path forward for achieving fidelities better than the threshold for quantum error correction using surface codes. This work was supported in part by ARO (W911NF-12-0607), NSF (PHY-1104660), DOE (DE-FG02-03ER46028), and by the Laboratory Directed Research and Development program at Sandia National Laboratories

  5. Imaging and Manipulating Energy Transfer Among Quantum Dots at Individual Dot Resolution.

    Science.gov (United States)

    Nguyen, Duc; Nguyen, Huy A; Lyding, Joseph W; Gruebele, Martin

    2017-06-27

    Many processes of interest in quantum dots involve charge or energy transfer from one dot to another. Energy transfer in films of quantum dots as well as between linked quantum dots has been demonstrated by luminescence shift, and the ultrafast time-dependence of energy transfer processes has been resolved. Bandgap variation among dots (energy disorder) and dot separation are known to play an important role in how energy diffuses. Thus, it would be very useful if energy transfer could be visualized directly on a dot-by-dot basis among small clusters or within films of quantum dots. To that effect, we report single molecule optical absorption detected by scanning tunneling microscopy (SMA-STM) to image energy pooling from donor into acceptor dots on a dot-by-dot basis. We show that we can manipulate groups of quantum dots by pruning away the dominant acceptor dot, and switching the energy transfer path to a different acceptor dot. Our experimental data agrees well with a simple Monte Carlo lattice model of energy transfer, similar to models in the literature, in which excitation energy is transferred preferentially from dots with a larger bandgap to dots with a smaller bandgap.

  6. Photoluminescence studies of single InGaAs quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher

    1999-01-01

    Semiconductor quantum dots are considered a promising material system for future optical devices and quantum computers. We have studied the low-temperature photoluminescence properties of single InGaAs quantum dots embedded in GaAs. The high spatial resolution required for resolving single dots...... to resolve luminescence lines from individual quantum dots, revealing an atomic-like spectrum of sharp transition lines. A parameter of fundamental importance is the intrinsic linewidth of these transitions. Using high-resolution spectroscopy we have determined the linewidth and investigated its dependence...... on temperature, which gives information about how the exciton confined to the quantum dot interacts with the surrounding lattice....

  7. Synthesis of CdSe quantum dots for quantum dot sensitized solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Neetu, E-mail: singh.neetu1985@gmail.com; Kapoor, Avinashi [Department of Electronic Science, University of Delhi South Campus, New Delhi-110 021 (India); Kumar, Vinod [Department of Physics, University of the Free State, Bloemfontein, ZA9300 (South Africa); Mehra, R. M. [School of Engineering and Technology, Sharda University, Greater Noida-201 306, U.P. (India)

    2014-04-24

    CdSe Quantum Dots (QDs) of size 0.85 nm were synthesized using chemical route. ZnO based Quantum Dot Sensitized Solar Cell (QDSSC) was fabricated using CdSe QDs as sensitizer. The Pre-synthesized QDs were found to be successfully adsorbed on front ZnO electrode and had potential to replace organic dyes in Dye Sensitized Solar Cells (DSSCs). The efficiency of QDSSC was obtained to be 2.06 % at AM 1.5.

  8. Coherent control of quantum dots

    DEFF Research Database (Denmark)

    Johansen, Jeppe; Lodahl, Peter; Hvam, Jørn Märcher

    In recent years much effort has been devoted to the use of semiconductor quantum dotsystems as building blocks for solid-state-based quantum logic devices. One importantparameter for such devices is the coherence time, which determines the number ofpossible quantum operations. From earlier...

  9. Hybrid quantum-classical modeling of quantum dot devices

    Science.gov (United States)

    Kantner, Markus; Mittnenzweig, Markus; Koprucki, Thomas

    2017-11-01

    The design of electrically driven quantum dot devices for quantum optical applications asks for modeling approaches combining classical device physics with quantum mechanics. We connect the well-established fields of semiclassical semiconductor transport theory and the theory of open quantum systems to meet this requirement. By coupling the van Roosbroeck system with a quantum master equation in Lindblad form, we introduce a new hybrid quantum-classical modeling approach, which provides a comprehensive description of quantum dot devices on multiple scales: it enables the calculation of quantum optical figures of merit and the spatially resolved simulation of the current flow in realistic semiconductor device geometries in a unified way. We construct the interface between both theories in such a way, that the resulting hybrid system obeys the fundamental axioms of (non)equilibrium thermodynamics. We show that our approach guarantees the conservation of charge, consistency with the thermodynamic equilibrium and the second law of thermodynamics. The feasibility of the approach is demonstrated by numerical simulations of an electrically driven single-photon source based on a single quantum dot in the stationary and transient operation regime.

  10. Entangled photons from small quantum dots

    NARCIS (Netherlands)

    Visser, P.M.; Allaart, K.; Lenstra, D.

    2003-01-01

    We discuss level schemes of small quantum-dot turnstiles and their applicability in the production of entanglement in two-photon emission. Due to the large energy splitting of the single-electron levels, only one single-electron level and one single-hole level can be made resonant with the levels in

  11. System and method for making quantum dots

    KAUST Repository

    Bakr, Osman M.

    2015-05-28

    Embodiments of the present disclosure provide for methods of making quantum dots (QDs) (passivated or unpassivated) using a continuous flow process, systems for making QDs using a continuous flow process, and the like. In one or more embodiments, the QDs produced using embodiments of the present disclosure can be used in solar photovoltaic cells, bio-imaging, IR emitters, or LEDs.

  12. Enabling biomedical research with designer quantum dots

    NARCIS (Netherlands)

    Tomczak, N.; Janczewski, D.; Dorokhin, D.V.; Han, M-Y; Vancso, Gyula J.; Navarro, Melba; Planell, Josep A.

    2012-01-01

    Quantum Dots (QDs) are a new class of semiconductor nanoparticulate luminophores, which are actively researched for novel applications in biology and nanomedicine. In this review, the recent progress in the design and applications of QD labels for in vitro and in vivo imaging of cells is presented.

  13. Effect of temperature on quantum dots

    Indian Academy of Sciences (India)

    MAHDI AHMADI BORJI

    2017-07-12

    Jul 12, 2017 ... Effect of temperature on InxGa1−xAs/GaAs quantum dots. MAHDI AHMADI BORJI1, ALI ... Attention should be given to the effects of temperature, ... tion 2 explains the model and method of the numerical simulation. Our results ...

  14. Decoherence in Nearly-Isolated Quantum Dots

    DEFF Research Database (Denmark)

    Folk, J.; M. Marcus, C.; Harris jr, J.

    2000-01-01

    Decoherence in nearly-isolated GaAs quantum dots is investigated using the change in average Coulomb blockade peak height upon breaking time-reversal symmetry. The normalized change in average peak height approaches the predicted universal value of 1/4 at temperatures well below the single...

  15. Photoluminescence of hybrid quantum dot systems

    Czech Academy of Sciences Publication Activity Database

    Král, Karel; Menšík, Miroslav

    2015-01-01

    Roč. 7, č. 4 (2015), 347-349 ISSN 2164-6627 R&D Projects: GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : quantum dots * energy transfer * electron-phonon interaction Subject RIV: BM - Solid Matter Physics ; Magnetism

  16. Many electron effects in semiconductor quantum dots

    Indian Academy of Sciences (India)

    Semiconductor quantum dots (QDs) exhibit shell structures, very similar to atoms. Termed as 'artificial atoms' by some, they are much larger (1 100 nm) than real atoms. One can study a variety of manyelectron effects in them, which are otherwise difficult to observe in a real atom. We have treated these effects within the ...

  17. Integrated photonics using colloidal quantum dots

    Science.gov (United States)

    Menon, Vinod M.; Husaini, Saima; Okoye, Nicky; Valappil, Nikesh V.

    2009-11-01

    Integrated photonic devices were realized using colloidal quantum dot composites such as flexible microcavity laser, microdisk emitters and integrated active-passive waveguides. The microcavity laser structure was realized using spin coating and consisted of an all-polymer distributed Bragg reflector with a poly-vinyl carbazole cavity layer embedded with InGaP/ZnS colloidal quantum dots. These microcavities can be peeled off the substrate yielding a flexible structure that can conform to any shape and whose emission spectra can be mechanically tuned. Planar photonic devices consisting of vertically coupled microring resonators, microdisk emitters, active-passive integrated waveguide structures and coupled active microdisk resonators were realized using soft lithography, photo-lithography, and electron beam lithography, respectively. The gain medium in all these devices was a composite consisting of quantum dots embedded in SU8 matrix. Finally, the effect of the host matrix on the optical properties of the quantum dots using results of steady-state and time-resolved luminescence measurements was determined. In addition to their specific functionalities, these novel device demonstrations and their development present a low-cost alternative to the traditional photonic device fabrication techniques.

  18. Influence of the quantum dot geometry on p -shell transitions in differently charged quantum dots

    Science.gov (United States)

    Holtkemper, M.; Reiter, D. E.; Kuhn, T.

    2018-02-01

    Absorption spectra of neutral, negatively, and positively charged semiconductor quantum dots are studied theoretically. We provide an overview of the main energetic structure around the p -shell transitions, including the influence of nearby nominally dark states. Based on the envelope function approximation, we treat the four-band Luttinger theory as well as the direct and short-range exchange Coulomb interactions within a configuration interaction approach. The quantum dot confinement is approximated by an anisotropic harmonic potential. We present a detailed investigation of state mixing and correlations mediated by the individual interactions. Differences and similarities between the differently charged quantum dots are highlighted. Especially large differences between negatively and positively charged quantum dots become evident. We present a visualization of energetic shifts and state mixtures due to changes in size, in-plane asymmetry, and aspect ratio. Thereby we provide a better understanding of the experimentally hard to access question of quantum dot geometry effects. Our findings show a method to determine the in-plane asymmetry from photoluminescence excitation spectra. Furthermore, we supply basic knowledge for tailoring the strength of certain state mixtures or the energetic order of particular excited states via changes of the shape of the quantum dot. Such knowledge builds the basis to find the optimal QD geometry for possible applications and experiments using excited states.

  19. Hole emission mechanism in Ge/Si quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Kaniewska, M.; Zaremba, G.; Kaczmarczyk, M.; Wzorek, M.; Czerwinski, A. [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Engstroem, O. [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Chalmers University of Technology, Kemivaegen 9, 412 96 Goeteborg (Sweden); Karmous, A.; Kirfel, O.; Kasper, E. [Institute for Semiconductor Engineering, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart (Germany); Raeissi, B.; Piscator, J. [Chalmers University of Technology, Kemivaegen 9, 412 96 Goeteborg (Sweden); Surma, B.; Wnuk, A. [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland)

    2011-02-15

    The mechanisms determining emission of holes in self-assembled Ge quantum dots (QDs) embedded in the p-type Si matrix have been investigated. Specimens were prepared by molecular beam epitaxy (MBE). Electrical methods such as deep level transient spectroscopy (DLTS) and capacitance versus voltage (C-V) measurements were used for the study. The emission mechanisms were identified by measuring a QD-related signal as a function of the repetition frequency of the filling pulses with the reverse voltage and the pulse voltage as a parameter. An observed shift of the signal position or its absence versus the voltage parameters was interpreted in terms of thermal, tunnelling and mixed processes and attributed to the presence of a Coulomb barrier formed as a result of the charging effect. Thermal emission properties of the QDs were characterized under such measurement conditions that tunnelling contributions to the DLTS spectra could be neglected (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Optical properties of quantum-dot-doped liquid scintillators

    International Nuclear Information System (INIS)

    Aberle, C; Winslow, L; Li, J J; Weiss, S

    2013-01-01

    Semiconductor nanoparticles (quantum dots) were studied in the context of liquid scintillator development for upcoming neutrino experiments. The unique optical and chemical properties of quantum dots are particularly promising for the use in neutrinoless double-beta decay experiments. Liquid scintillators for large scale neutrino detectors have to meet specific requirements which are reviewed, highlighting the peculiarities of quantum-dot-doping. In this paper, we report results on laboratory-scale measurements of the attenuation length and the fluorescence properties of three commercial quantum dot samples. The results include absorbance and emission stability measurements, improvement in transparency due to filtering of the quantum dot samples, precipitation tests to isolate the quantum dots from solution and energy transfer studies with quantum dots and the fluorophore PPO

  1. Self-assembled monolayer of ammonium pyrrolidine dithiocarbamate on copper detected using electrochemical methods, surface enhanced Raman scattering and quantum chemistry calculations

    Energy Technology Data Exchange (ETDEWEB)

    Liao, Q.-Q., E-mail: liaoqq1971@yahoo.com.cn [Key Lab of Shanghai Colleges and Universities for Electric Power Corrosion Control and Applied Electrochemistry, Shanghai Engineering Research Center of Energy-Saving in Heat Exchange Systems, Shanghai University of Electric Power, Shanghai 200090 (China); Yue, Z.-W.; Yang, D. [Key Lab of Shanghai Colleges and Universities for Electric Power Corrosion Control and Applied Electrochemistry, Shanghai Engineering Research Center of Energy-Saving in Heat Exchange Systems, Shanghai University of Electric Power, Shanghai 200090 (China); Wang, Z.-H. [Department of Chemistry, Tongji University, Shanghai 200092 (China); Li, Z.-H. [Department of Chemistry, Fudan University, Shanghai 200433 (China); Ge, H.-H. [Key Lab of Shanghai Colleges and Universities for Electric Power Corrosion Control and Applied Electrochemistry, Shanghai Engineering Research Center of Energy-Saving in Heat Exchange Systems, Shanghai University of Electric Power, Shanghai 200090 (China); Li, Y.-J. [Department of Chemistry, Tongji University, Shanghai 200092 (China)

    2011-07-29

    Ammonium pyrrolidine dithiocarbamate (APDTC) monolayer was self-assembled on fresh copper surface obtained after oxidation-reduction cycle treatment in 0.1 mol L{sup -1} potassium chloride solution at ambient temperature. The APDTC self-assembled monolayer (SAM) on copper surface was investigated by surface enhanced Raman scattering spectroscopy and the results show that APDTC SAM is chemisorbed on copper surface by its sulfur atoms with perpendicular orientation. The optimum immersing period for SAM formation is 4 h at 0.01 mol L{sup -1} concentration of APDTC. The impedance results indicate that APDTC SAM has good corrosion inhibition effects for copper in 0.5 mol L{sup -1} hydrochloric acid solution and its maximum inhibition efficiency could reach 95%. Quantum chemical calculations show that APDTC has relatively small {Delta}E between the highest occupied molecular orbital and the lowest unoccupied molecular orbital and large negative charge in its two sulfur atoms, which facilitate formation of an insulating Cu/APDTC film on copper surface.

  2. Using a quantum dot system to realize perfect state transfer

    International Nuclear Information System (INIS)

    Li Ji; Wu Shi-Hai; Zhang Wen-Wen; Xi Xiao-Qiang

    2011-01-01

    There are some disadvantages to Nikolopoulos et al.'s protocol [Nikolopoulos G M, Petrosyan D and Lambropoulos P 2004 Europhys. Lett. 65 297] where a quantum dot system is used to realize quantum communication. To overcome these disadvantages, we propose a protocol that uses a quantum dot array to construct a four-qubit spin chain to realize perfect quantum state transfer (PQST). First, we calculate the interaction relation for PQST in the spin chain. Second, we review the interaction between the quantum dots in the Heitler—London approach. Third, we present a detailed program for designing the proper parameters of a quantum dot array to realize PQST. (general)

  3. Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

    Science.gov (United States)

    Qiu, Yueming; Chacon, Rebecca; Uhl, David; Yang, Rui

    2005-01-01

    In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

  4. Efficient Luminescence from Perovskite Quantum Dot Solids

    KAUST Repository

    Kim, Younghoon; Yassitepe, Emre; Voznyy, Oleksandr; Comin, Riccardo; Walters, Grant; Gong, Xiwen; Kanjanaboos, Pongsakorn; Nogueira, Ana F.; Sargent, Edward H.

    2015-01-01

    © 2015 American Chemical Society. Nanocrystals of CsPbX3 perovskites are promising materials for light-emitting optoelectronics because of their colloidal stability, optically tunable bandgap, bright photoluminescence, and excellent photoluminescence quantum yield. Despite their promise, nanocrystal-only films of CsPbX3 perovskites have not yet been fabricated; instead, highly insulating polymers have been relied upon to compensate for nanocrystals' unstable surfaces. We develop solution chemistry that enables single-step casting of perovskite nanocrystal films and overcomes problems in both perovskite quantum dot purification and film fabrication. Centrifugally cast films retain bright photoluminescence and achieve dense and homogeneous morphologies. The new materials offer a platform for optoelectronic applications of perovskite quantum dot solids.

  5. Efficient Luminescence from Perovskite Quantum Dot Solids

    KAUST Repository

    Kim, Younghoon

    2015-11-18

    © 2015 American Chemical Society. Nanocrystals of CsPbX3 perovskites are promising materials for light-emitting optoelectronics because of their colloidal stability, optically tunable bandgap, bright photoluminescence, and excellent photoluminescence quantum yield. Despite their promise, nanocrystal-only films of CsPbX3 perovskites have not yet been fabricated; instead, highly insulating polymers have been relied upon to compensate for nanocrystals\\' unstable surfaces. We develop solution chemistry that enables single-step casting of perovskite nanocrystal films and overcomes problems in both perovskite quantum dot purification and film fabrication. Centrifugally cast films retain bright photoluminescence and achieve dense and homogeneous morphologies. The new materials offer a platform for optoelectronic applications of perovskite quantum dot solids.

  6. Quantum Dots and Their Multimodal Applications: A Review

    Directory of Open Access Journals (Sweden)

    Paul H. Holloway

    2010-03-01

    Full Text Available Semiconducting quantum dots, whose particle sizes are in the nanometer range, have very unusual properties. The quantum dots have band gaps that depend in a complicated fashion upon a number of factors, described in the article. Processing-structure-properties-performance relationships are reviewed for compound semiconducting quantum dots. Various methods for synthesizing these quantum dots are discussed, as well as their resulting properties. Quantum states and confinement of their excitons may shift their optical absorption and emission energies. Such effects are important for tuning their luminescence stimulated by photons (photoluminescence or electric field (electroluminescence. In this article, decoupling of quantum effects on excitation and emission are described, along with the use of quantum dots as sensitizers in phosphors. In addition, we reviewed the multimodal applications of quantum dots, including in electroluminescence device, solar cell and biological imaging.

  7. Spin interactions in InAs quantum dots and molecules

    Energy Technology Data Exchange (ETDEWEB)

    Doty, M.F.; Ware, M.E.; Stinaff, E.A.; Scheibner, M.; Bracker, A.S.; Ponomarev, I.V.; Badescu, S.C.; Reinecke, T.L.; Gammon, D. [Naval Research Lab, Washington, DC 20375 (United States); Korenev, V.L. [A.F. Ioffe Physical Technical Institute, St. Petersburg 194021 (Russian Federation)

    2006-12-15

    Spin interactions between particles in quantum dots or quantum dot molecules appear as fine structure in the photoluminescence spectra. Using the understanding of exchange interactions that has been developed from single dot spectra, we analyze the spin signatures of coupled quantum dots separated by a wide barrier such that inter-dot interactions are negligible. We find that electron-hole exchange splitting is directly evident. In dots charged with an excess hole, an effective hole-hole interaction can be turned on through tunnel coupling. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Two-color single-photon emission from InAs quantum dots: toward logic information management using quantum light.

    Science.gov (United States)

    Rivas, David; Muñoz-Matutano, Guillermo; Canet-Ferrer, Josep; García-Calzada, Raúl; Trevisi, Giovanna; Seravalli, Luca; Frigeri, Paola; Martínez-Pastor, Juan P

    2014-02-12

    In this work, we propose the use of the Hanbury-Brown and Twiss interferometric technique and a switchable two-color excitation method for evaluating the exciton and noncorrelated electron-hole dynamics associated with single photon emission from indium arsenide (InAs) self-assembled quantum dots (QDs). Using a microstate master equation model we demonstrate that our single QDs are described by nonlinear exciton dynamics. The simultaneous detection of two-color, single photon emission from InAs QDs using these nonlinear dynamics was used to design a NOT AND logic transference function. This computational functionality combines the advantages of working with light/photons as input/output device parameters (all-optical system) and that of a nanodevice (QD size of ∼ 20 nm) while also providing high optical sensitivity (ultralow optical power operational requirements). These system features represent an important and interesting step toward the development of new prototypes for the incoming quantum information technologies.

  9. Four-Wave Mixing Spectroscopy of Quantum Dot Molecules

    Science.gov (United States)

    Sitek, A.; Machnikowski, P.

    2007-08-01

    We study theoretically the nonlinear four-wave mixing response of an ensemble of coupled pairs of quantum dots (quantum dot molecules). We discuss the shape of the echo signal depending on the parameters of the ensemble: the statistics of transition energies and the degree of size correlations between the dots forming the molecules.

  10. Controlling the aspect ratio of quantum dots: from columnar dots to quantum rods

    NARCIS (Netherlands)

    Li, L.; Patriarche, G.; Chauvin, N.J.G.; Ridha, P.; Rossetti, M.; Andrzejewski, J.; Sek, G.; Misiewicz, J.; Fiore, A.

    2008-01-01

    We demonstrate the feasibility and flexibility of artificial shape engineering of epitaxial semiconductor nanostructures. Novel nanostructures including InGaAs quantum rods (QRs), nanocandles, and quantum dots (QDs)-in-rods were realized on a GaAs substrate. They were formed by depositing a

  11. Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

    Directory of Open Access Journals (Sweden)

    Tyagi Renu

    2009-01-01

    Full Text Available Abstract Self-assembled InAs quantum dots (QDs were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs. The surface morphology and structural characteristics of the quantum dots analyzed by atomic force microscope revealed that the density of the InAs quantum dots first increased and then decreased with the amount of InAs coverage; whereas density decreased with increase in growth temperature. It was observed that the size and height of InAs quantum dots increased with increase in both temperature and InAs coverage. The density of QDs was effectively controlled by growth temperature and InAs coverage on GaAs buffer layer.

  12. Theory of the Quantum Dot Hybrid Qubit

    Science.gov (United States)

    Friesen, Mark

    2015-03-01

    The quantum dot hybrid qubit, formed from three electrons in two quantum dots, combines the desirable features of charge qubits (fast manipulation) and spin qubits (long coherence times). The hybridized spin and charge states yield a unique energy spectrum with several useful properties, including two different operating regimes that are relatively immune to charge noise due to the presence of optimal working points or ``sweet spots.'' In this talk, I will describe dc and ac-driven gate operations of the quantum dot hybrid qubit. I will analyze improvements in the dephasing that are enabled by the sweet spots, and I will discuss the outlook for quantum hybrid qubits in terms of scalability. This work was supported in part by ARO (W911NF-12-0607), NSF (PHY-1104660), the USDOD, and the Intelligence Community Postdoctoral Research Fellowship Program. The views and conclusions contained in this presentation are those of the authors and should not be interpreted as representing the official policies or endorsements, either expressed or implied, of the US government.

  13. Quantum dot-polymer conjugates for stable luminescent displays.

    Science.gov (United States)

    Ghimire, Sushant; Sivadas, Anjaly; Yuyama, Ken-Ichi; Takano, Yuta; Francis, Raju; Biju, Vasudevanpillai

    2018-05-23

    The broad absorption of light in the UV-Vis-NIR region and the size-based tunable photoluminescence color of semiconductor quantum dots make these tiny crystals one of the most attractive antennae in solar cells and phosphors in electrooptical devices. One of the primary requirements for such real-world applications of quantum dots is their stable and uniform distribution in optically transparent matrices. In this work, we prepare transparent thin films of polymer-quantum dot conjugates, where CdSe/ZnS quantum dots are uniformly distributed at high densities in a chitosan-polystyrene copolymer (CS-g-PS) matrix. Here, quantum dots in an aqueous solution are conjugated to the copolymer by a phase transfer reaction. With the stable conjugation of quantum dots to the copolymer, we prevent undesired phase separation between the two and aggregation of quantum dots. Furthermore, the conjugate allows us to prepare transparent thin films in which quantum dots are uniformly distributed at high densities. The CS-g-PS copolymer helps us in not only preserving the photoluminescence properties of quantum dots in the film but also rendering excellent photostability to quantum dots at the ensemble and single particle levels, making the conjugate a promising material for photoluminescence-based devices.

  14. Principles of conjugating quantum dots to proteins via carbodiimide chemistry

    International Nuclear Information System (INIS)

    Song Fayi; Chan, Warren C W

    2011-01-01

    The covalent coupling of nanomaterials to bio-recognition molecules is a critical intermediate step in using nanomaterials for biology and medicine. Here we investigate the carbodiimide-mediated conjugation of fluorescent quantum dots to different proteins (e.g., immunoglobulin G, bovine serum albumin, and horseradish peroxidase). To enable these studies, we developed a simple method to isolate quantum dot bioconjugates from unconjugated quantum dots. The results show that the reactant concentrations and protein type will impact the overall number of proteins conjugated onto the surfaces of the quantum dots, homogeneity of the protein–quantum dot conjugate population, quantum efficiency, binding avidity, and enzymatic kinetics. We propose general principles that should be followed for the successful coupling of proteins to quantum dots.

  15. Polarization spectroscopy of positive and negative trions in an InAs quantum dot

    Science.gov (United States)

    Ware, Morgan E.; Bracker, Allan S.; Stinaff, Eric; Gammon, Daniel; Gershoni, David; Korenev, Vladimir L.

    2005-02-01

    Using polarization-sensitive photoluminescence and photoluminescence excitation spectroscopy, we study single InAs/GaAs self-assembled quantum dots. The dots were embedded in an n-type, Schottky diode structure allowing for control of the charge state. We present here the exciton, singly charged exciton (positive and negative trions), and the twice negatively charged exciton. For non-resonant excitation below the wetting layer, we observed a large degree of polarization memory from the radiative recombination of both the positive and negative trions. In excitation spectra, through the p-shell, we have found several sharp resonances in the emission from the s-shell recombination of the dot in all charged states. Some of these excitation resonances exhibit strong coulomb shifts upon addition of charges into the quantum dot. One particular resonance of the negatively charged trion was found to exhibit a fine structure doublet under circular polarization. This observation is explained in terms of resonant absorption into the triplet states of the negative trion.

  16. The quantum mechanical description of the dot-dot interaction in ionic colloids

    International Nuclear Information System (INIS)

    Morais, P.C.; Qu, Fanyao

    2007-01-01

    In this study the dot-dot interaction in ionic colloids is systematically investigated by self-consistently solving the coupled Schroedinger and Poisson equations in the frame of finite difference method (FDM). In a first approximation the interacting two-dot system (dimer) is described using the picture of two coupled quantum wells. It was found that the dot-dot interaction changes the colloid characteristic by changing the hopping coefficient (t) and consequently the nanodot surface charge density (σ). The hopping coefficient and the surface charge density were investigated as a function of the dot size and dot-dot distance

  17. Record Charge Carrier Diffusion Length in Colloidal Quantum Dot Solids via Mutual Dot-To-Dot Surface Passivation.

    Science.gov (United States)

    Carey, Graham H; Levina, Larissa; Comin, Riccardo; Voznyy, Oleksandr; Sargent, Edward H

    2015-06-03

    Through a combination of chemical and mutual dot-to-dot surface passivation, high-quality colloidal quantum dot solids are fabricated. The joint passivation techniques lead to a record diffusion length for colloidal quantum dots of 230 ± 20 nm. The technique is applied to create thick photovoltaic devices that exhibit high current density without losing fill factor. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Coulomb Blockade of Tunnel-Coupled Quantum Dots

    National Research Council Canada - National Science Library

    Golden, John

    1997-01-01

    .... Though classical charging models can explain the Coulomb blockade of an isolated dot, they must be modified to explain the Coulomb blockade of dots coupled through the quantum mechanical tunneling of electrons...

  19. Quantum transport in a ring of quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Sena Junior, Marcone I.; Macedo, Antonio M.C. [Universidade Federal de Pernambuco (UFPE), Recife, PE (Brazil). Dept. de Fisica

    2012-07-01

    Full text: Quantum dots play a central role in the recent technological efforts to build efficient devices to storage, process and transmit information in the quantum regime [1]. One of the reasons for this interest is the relative simplicity with which its control parameters can be changed by experimentalists. Systems with one, two and even arrays of quantum dots have been intensively studied with respect to their efficiency in processing information carried by charge, spin and heat [1]. A particularly useful realization of a quantum dot is a ballistic electron cavity formed by electrostatic potentials in a two-dimensional electron gas. In the chaotic regime, the shape of the dot is statistically irrelevant and the ability to change its form via external gates can be used to generate members of an ensemble of identical systems. From a theoretical point of view, such quantum dots are ideal electron systems in which to study theoretical models combining phase-coherence, chaotic dynamics and Coulomb interactions. In this work, we use the Keldysh non-linear sigma model [2] with a counting field to study electron transport through a ring of four chaotic quantum dots pierced by an Aharonov-Bohm flux. This system is particularly well suited for studying ways to use the weak-localization effect to process quantum information. We derive the quantum circuit equations for this system from the saddle-point condition of the Keldysh action. The results are used to build the action of the corresponding supersymmetric (SUSY) non-linear sigma model. The connection with the random scattering matrix approach is then made via the color-flavor transformation. In the perturbative regime, where weak-localization effects appear, the Keldysh, SUSY and random scattering matrix approaches can be compared by means of independent analytical calculations. We conclude by pointing out the many advantages of our unified approach. [1] For a review, see Yu. V. Nazarov, and Ya. M. Blanter, Quantum

  20. Quantum photonics with quantum dots in photonic wires

    DEFF Research Database (Denmark)

    Munsch, Mathieu; Kuhlmann, Andreas; Cadeddu, Davide

    2016-01-01

    We present results from the spectroscopy of a single quantum dot in a photonic wire. The device presents a high photon extraction efficiency, and strong hybrid coupling to mechanical modes. We use resonance fluorescence to probe the emitter’s properties with the highest sensitivity. Weperform...

  1. Quantum optics with quantum dots in photonic wires

    DEFF Research Database (Denmark)

    Munsch, Mathieu; Cadeddu, Davide; Teissier, Jean

    2016-01-01

    We present an exploration of the spectroscopy of a single quantum dot in a photonic wire. The device presents a high photon extraction efficiency, and strong hybrid coupling to mechanical modes. We use resonance fluorescence to probe the emitter's properties with the highest sensitivity, allowing...

  2. Conductance Peaks in Open Quantum Dots

    International Nuclear Information System (INIS)

    Ramos, J. G. G. S.; Bazeia, D.; Hussein, M. S.; Lewenkopf, C. H.

    2011-01-01

    We present a simple measure of the conductance fluctuations in open ballistic chaotic quantum dots, extending the number of maxima method originally proposed for the statistical analysis of compound nuclear reactions. The average number of extreme points (maxima and minima) in the dimensionless conductance T as a function of an arbitrary external parameter Z is directly related to the autocorrelation function of T(Z). The parameter Z can be associated with an applied gate voltage causing shape deformation in quantum dot, an external magnetic field, the Fermi energy, etc. The average density of maxima is found to be Z >=α Z /Z c , where α Z is a universal constant and Z c is the conductance autocorrelation length, which is system specific. The analysis of Z > does not require large statistic samples, providing a quite amenable way to access information about parametric correlations, such as Z c .

  3. Theory of Charged Quantum Dot Molecules

    Science.gov (United States)

    Ponomarev, I. V.; Scheibner, M.; Stinaff, E. A.; Bracker, A. S.; Doty, M. F.; Ware, M. E.; Gammon, D.; Reinecke, T. L.; Korenev, V. L.

    2006-03-01

    Recent optical spectroscopy of excitonic molecules in coupled quantum dots (CQDs) tuned by electric field reveal a richer diversity in spectral line patterns than in their single quantum dot counterparts. We developed a theoretical model that allows us to classify energies and intensities of various PL transitions. In this approach the electric field induced resonance tunneling of the electron and hole states occurs at different biases due to the inherent asymmetry of CQDs. The truncated many-body basis configurations for each molecule are constructed from antisymmetrized products of single-particle states, where the electron occupies only one ground state level in single QD and the hole can occupy two lowest levels of CQD system. The Coulomb interaction between particles is treated with perturbation theory. As a result the observed PL spectral lines can be described with a small number of parameters. The theoretical predictions account well for recent experiments.

  4. Strain-tunable quantum dot devices

    International Nuclear Information System (INIS)

    Rastelli, A.; Trotta, R.; Zallo, E.; Atkinson, P.; Magerl, E.; Ding, F.; Plumhof, J.D.; Kumar, S.; Doerr, K.; Schmidt, O.G.

    2011-01-01

    We introduce a new class of quantum dot-based devices, in which the semiconductor structures are integrated on top of piezoelectric actuators. This combination allows on one hand to study in detail the effects produced by variable strains (up to about 0.2%) on the excitonic emission of single quantum dots and on the other to manipulate their electronic- and optical properties to achieve specific requirements. In fact, by combining strain with electric fields we are able to obtain (i) independent control of emission energy and charge-state of a QD, (II) wavelength-tunable single-QD light-emitting diodes and (III) frequency-stabilized sources of single photons at predefined wavelengths. Possible future extensions and applications of this technology will be discussed.

  5. Quantum Dot Devices for Optical Signal Processing

    DEFF Research Database (Denmark)

    Chen, Yaohui

    and the continuum. Additional to the conventional time-domain modeling scheme, a small-signal perturbation analysis has been used to assist the investigation of harmonic modulation properties. The static properties of quantum dot devices, for example high saturation power, have been quantitatively analyzed....... Additional to the static linear amplication properties, we focus on exploring the gain dynamics on the time scale ranging from sub-picosecond to nanosecond. In terms of optical signals that have been investigated, one is the simple sinusoidally modulated optical carrier with a typical modulation frequency....... We also investigate the gain dynamics in the presence of pulsed signals, in particular the steady gain response to a periodic pulse trains with various time periods. Additional to the analysis of high speed patterning free amplication up to 150-200 Gb/s in quantum dot semiconductor optical ampliers...

  6. Electric and Magnetic Interaction between Quantum Dots and Light

    DEFF Research Database (Denmark)

    Tighineanu, Petru

    argue that there is ample room for improving the oscillator strength with prospects for approaching the ultra-strong-coupling regime of cavity quantum electrodynamics with optical photons. These outstanding gures of merit render interface-uctuation quantum dots excellent candidates for use in cavity...... quantum electrodynamics and quantum-information science. We investigate exciton localization in droplet-epitaxy quantum dots by conducting spectral and time-resolved measurements. We nd small excitons despite the large physical size of dropletepitaxy quantum dots, which is attributed to material inter......The present thesis reports research on the optical properties of quantum dots by developing new theories and conducting optical measurements. We demonstrate experimentally singlephoton superradiance in interface-uctuation quantum dots by recording the temporal decay dynamics in conjunction...

  7. From structure to spectra. Tight-binding theory of InGaAs quantum dots

    International Nuclear Information System (INIS)

    Goldmann, Elias

    2014-01-01

    Self-assembled semiconductor quantum dots have raised considerable interest in the last decades due to a multitude of possible applications ranging from carrier storage to light emitters, lasers and future quantum communication devices. Quantum dots offer unique electronic and photonic properties due to the three-dimensional confinement of charge carriers and the coupling to a quasi-continuum of wetting layer and barrier states. In this work we investigate the electronic structure of In x Ga 1-x As quantum dots embedded in GaAs, considering realistic quantum dot geometries and Indium concentrations. We utilize a next-neighbour sp 3 s * tight-binding model for the calculation of electronic single-particle energies and wave functions bound in the nanostructure and account for strain arising from lattice mismatch of the constituent materials atomistically. With the calculated single-particle wave functions we derive Coulomb matrix elements and include them into a configuration interaction treatment, yielding many-particle states and energies of the interacting many-carrier system. Also from the tight-binding single-particle wave functions we derive dipole transition strengths to obtain optical quantum dot emission and absorption spectra with Fermi's golden rule. Excitonic fine-structure splittings are obtained, which play an important role for future quantum cryptography and quantum communication devices for entanglement swapping or quantum repeating. For light emission suited for long-range quantum-crypted fiber communication InAs quantum dots are embedded in an In x Ga 1-x As strain-reducing layer, shifting the emission wavelength into telecom low-absorption windows. We investigate the influence of the strain-reducing layer Indium concentration on the excitonic finestructure splitting. The fine-structure splitting is found to saturate and, in some cases, even reduce with strain-reducing layer Indium concentration, a result being counterintuitively. Our result

  8. From structure to spectra. Tight-binding theory of InGaAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Goldmann, Elias

    2014-07-23

    Self-assembled semiconductor quantum dots have raised considerable interest in the last decades due to a multitude of possible applications ranging from carrier storage to light emitters, lasers and future quantum communication devices. Quantum dots offer unique electronic and photonic properties due to the three-dimensional confinement of charge carriers and the coupling to a quasi-continuum of wetting layer and barrier states. In this work we investigate the electronic structure of In{sub x}Ga{sub 1-x}As quantum dots embedded in GaAs, considering realistic quantum dot geometries and Indium concentrations. We utilize a next-neighbour sp{sup 3}s{sup *} tight-binding model for the calculation of electronic single-particle energies and wave functions bound in the nanostructure and account for strain arising from lattice mismatch of the constituent materials atomistically. With the calculated single-particle wave functions we derive Coulomb matrix elements and include them into a configuration interaction treatment, yielding many-particle states and energies of the interacting many-carrier system. Also from the tight-binding single-particle wave functions we derive dipole transition strengths to obtain optical quantum dot emission and absorption spectra with Fermi's golden rule. Excitonic fine-structure splittings are obtained, which play an important role for future quantum cryptography and quantum communication devices for entanglement swapping or quantum repeating. For light emission suited for long-range quantum-crypted fiber communication InAs quantum dots are embedded in an In{sub x}Ga{sub 1-x}As strain-reducing layer, shifting the emission wavelength into telecom low-absorption windows. We investigate the influence of the strain-reducing layer Indium concentration on the excitonic finestructure splitting. The fine-structure splitting is found to saturate and, in some cases, even reduce with strain-reducing layer Indium concentration, a result being

  9. The Silicon:Colloidal Quantum Dot Heterojunction

    KAUST Repository

    Masala, Silvia; Adinolfi, Valerio; Sun, Jon Paul; Del Gobbo, Silvano; Voznyy, Oleksandr; Kramer, Illan J.; Hill, Ian G.; Sargent, Edward H.

    2015-01-01

    A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Biomedical application of carbon quantum dots

    International Nuclear Information System (INIS)

    Markovic, Z.

    2017-01-01

    In this presentation we will summarize and discuss the possibilities of application of carbon quantum dots (CQD) as agents for PDT. Considering their biocompatibility, photostability and optical properties, CQD seem to be good candidates as a photosensitizer. This lecture critically compares and discusses current state-of the-art use of CQD in PDT. We will analyze structural, morphological and optical properties of these nanomaterials as well as the mechanisms responsible for their photosensition and ROS production. (authors)

  11. Quantum Dots for Molecular Diagnostics of Tumors

    OpenAIRE

    Zdobnova, T.A.; Lebedenko, E.N.; Deyev, S.М.

    2011-01-01

    Semiconductor quantum dots (QDs) are a new class of fluorophores with unique physical and chemical properties, which allow to appreciably expand the possibilities for the current methods of fluorescent imaging and optical diagnostics. Here we discuss the prospects of QD application for molecular diagnostics of tumors ranging from cancer-specific marker detection on microplates to non-invasive tumor imaging in vivo. We also point out the essential problems that require resolution in order to c...

  12. The Silicon:Colloidal Quantum Dot Heterojunction

    KAUST Repository

    Masala, Silvia

    2015-10-13

    A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Depleted Bulk Heterojunction Colloidal Quantum Dot Photovoltaics

    KAUST Repository

    Barkhouse, D. Aaron R.

    2011-05-26

    The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Correlation effects in superconducting quantum dot systems

    Science.gov (United States)

    Pokorný, Vladislav; Žonda, Martin

    2018-05-01

    We study the effect of electron correlations on a system consisting of a single-level quantum dot with local Coulomb interaction attached to two superconducting leads. We use the single-impurity Anderson model with BCS superconducting baths to study the interplay between the proximity induced electron pairing and the local Coulomb interaction. We show how to solve the model using the continuous-time hybridization-expansion quantum Monte Carlo method. The results obtained for experimentally relevant parameters are compared with results of self-consistent second order perturbation theory as well as with the numerical renormalization group method.

  15. Research Progress of Photoanodes for Quantum Dot Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    LI Zhi-min

    2017-08-01

    Full Text Available This paper presents the development status and tendency of quantum dot sensitized solar cells. Photoanode research progress and its related technologies are analyzed in detail from the three ways of semiconductor thin films, quantum dot co-sensitization and quantum dot doping, deriving from the approach that the conversion efficiency can be improved by photoanode modification for quantum dot sensitized solar cells. According to the key factors which restrict the cell efficiency, the promising future development of quantum dot sensitized solar cells is proposed,for example,optimizing further the compositions and structures of semiconductor thin films for the photoanodes, exploring new quantum dots with broadband absorption and developing high efficient techniques of interface modification.

  16. Using of Quantum Dots in Biology and Medicine.

    Science.gov (United States)

    Pleskova, Svetlana; Mikheeva, Elza; Gornostaeva, Ekaterina

    2018-01-01

    Quantum dots are nanoparticles, which due to their unique physical and chemical (first of all optical) properties, are promising in biology and medicine. There are many ways for quantum dots synthesis, both in the form of nanoislands self-forming on the surfaces, which can be used as single-photon emitters in electronics for storing information, and in the form of colloidal quantum dots for diagnostic and therapeutic purposes in living systems. The paper describes the main methods of quantum dots synthesis and summarizes medical and biological ways of their use. The main emphasis is laid on the ways of quantum dots surface modification. Influence of the size and form of nanoparticles, charge on the surfaces of quantum dots, and cover type on the efficiency of internalization by cells and cell compartments is shown. The main mechanisms of penetration are considered.

  17. Quantum Dots for Solar Cell Application

    Science.gov (United States)

    Poudyal, Uma

    Solar energy has been anticipated as the most important and reliable source of renewable energy to address the ever-increasing energy demand. To harvest solar energy efficiently, diverse kinds of solar cells have been studied. Among these, quantum dot sensitized solar cells have been an interesting group of solar cells mainly due to tunable, size-dependent electronic and optical properties of quantum dots. Moreover, doping these quantum dots with transition metal elements such as Mn opens avenue for improved performance of solar cells as well as for spin based technologies. In this dissertation, Mn-doped CdSe QDs (Mn-CdSe) have been synthesized by Successive Ionic Layer Adsorption and Reaction (SILAR) method. They are used in solar cells to study the effect of Mn doping in the performance of solar cells. Incident photon to current-conversion efficiency (IPCE) is used to record the effect of Mn-doping. Intensity modulated photovoltage and photocurrent spectroscopy (IMVS/PS) has been used to study the carrier dynamics in these solar cells. Additionally, the magnetic properties of Mn-CdSe QDs is studied and its possible origin is discussed. Moreover, CdS/CdSe QDs have been used to study the effect of liquid, gel and solid electrolyte in the performance and stability of the solar cells. Using IPCE spectra, the time decay measurements are presented and the possible reactions between the QD and the electrolytes are explained.

  18. Polarization-insensitive quantum-dot coupled quantum-well semiconductor optical amplifier

    International Nuclear Information System (INIS)

    Huang Lirong; Yu Yi; Tian Peng; Huang Dexiu

    2009-01-01

    The optical gain of a quantum-dot semiconductor optical amplifier is usually seriously dependent on polarization; we propose a quantum-dot coupled tensile-strained quantum-well structure to obtain polarization insensitivity. The tensile-strained quantum well not only serves as a carrier injection layer of quantum dots but also offers gain to the transverse-magnetic mode. Based on the polarization-dependent coupled carrier rate-equation model, we study carrier competition among quantum well and quantum dots, and study the polarization dependence of the quantum-dot coupled quantum-well semiconductor optical amplifier. We also analyze polarization-dependent photon-mediated carrier distribution among quantum well and quantum dots. It is shown that polarization-insensitive gain can be realized by optimal design

  19. Electronic transport through a quantum dot chain with strong dot-lead coupling

    International Nuclear Information System (INIS)

    Liu, Yu; Zheng, Yisong; Gong, Weijiang; Gao, Wenzhu; Lue, Tianquan

    2007-01-01

    By means of the non-equilibrium Green function technique, the electronic transport through an N-quantum-dot chain is theoretically studied. By calculating the linear conductance spectrum and the local density of states in quantum dots, we find the resonant peaks in the spectra coincides with the eigen-energies of the N-quantum-dot chain when the dot-lead coupling is relatively weak. With the increase of the dot-lead coupling, such a correspondence becomes inaccurate. When the dot-lead coupling exceeds twice the interdot coupling, such a mapping collapses completely. The linear conductance turn to reflect the eigen-energies of the (N-2)- or (N-1)-quantum dot chain instead. The two peripheral quantum dots do not manifest themselves in the linear conductance spectrum. More interestingly, with the further increase of the dot-lead coupling, the system behaves just like an (N-2)- or (N-1)-quantum dot chain in weak dot-lead coupling limit, since the resonant peaks becomes narrower with the increase of dot-lead coupling

  20. Quantum optics with quantum dots in photonic nanowires

    DEFF Research Database (Denmark)

    Claudon, Julien; Munsch, Matthieu; Bleuse, Joel

    2012-01-01

    Besides microcavities and photonic crystals, photonic nanowires have recently emerged as a novel resource for solidstate quantum optics. We will review recent studies which demonstrate an excellent control over the spontaneous emission of InAs quantum dots (QDs) embedded in single-mode Ga...... quantum optoelectronic devices. Quite amazingly, this approach has for instance permitted (unlike microcavity-based approaches) to combine for the first time a record-high efficiency (72%) and a negligible g(2) in a QD single photon source....

  1. In situ electron-beam polymerization stabilized quantum dot micelles.

    Science.gov (United States)

    Travert-Branger, Nathalie; Dubois, Fabien; Renault, Jean-Philippe; Pin, Serge; Mahler, Benoit; Gravel, Edmond; Dubertret, Benoit; Doris, Eric

    2011-04-19

    A polymerizable amphiphile polymer containing PEG was synthesized and used to encapsulate quantum dots in micelles. The quantum dot micelles were then polymerized using a "clean" electron beam process that did not require any post-irradiation purification. Fluorescence spectroscopy revealed that the polymerized micelles provided an organic coating that preserved the quantum dot fluorescence better than nonpolymerized micelles, even under harsh conditions. © 2011 American Chemical Society

  2. Spin fine structure of optically excited quantum dot molecules

    Science.gov (United States)

    Scheibner, M.; Doty, M. F.; Ponomarev, I. V.; Bracker, A. S.; Stinaff, E. A.; Korenev, V. L.; Reinecke, T. L.; Gammon, D.

    2007-06-01

    The interaction between spins in coupled quantum dots is revealed in distinct fine structure patterns in the measured optical spectra of InAs/GaAs double quantum dot molecules containing zero, one, or two excess holes. The fine structure is explained well in terms of a uniquely molecular interplay of spin-exchange interactions, Pauli exclusion, and orbital tunneling. This knowledge is critical for converting quantum dot molecule tunneling into a means of optically coupling not just orbitals but also spins.

  3. Excitonic behavior in self-assembled InAs/GaAs quantum rings in high magnetic fields

    NARCIS (Netherlands)

    Kleemans, N.A.J.M.; Blokland, J.H.; Taboada, A.G.; Genuchten, van H.C.M.; Bozkurt, M.; Fomin, V.M.; Gladilin, V.N.; Granados, D.; Garcia, J.M.; Christianen, P.C.M.; Maan, J.C.; Devreese, J.T.; Koenraad, P.M.

    2009-01-01

    We investigate the exciton energy level structure of a large ensemble of InAs/GaAs quantum rings by photoluminescence spectroscopy in magnetic fields up to 30 T for different excitation densities. The confinement of an electron and a hole in these type I quantum rings along with the Coulomb

  4. Controllability of multi-partite quantum systems and selective excitation of quantum dots

    International Nuclear Information System (INIS)

    Schirmer, S G; Pullen, I C H; Solomon, A I

    2005-01-01

    We consider the degrees of controllability of multi-partite quantum systems, as well as necessary and sufficient criteria for each case. The results are applied to the problem of simultaneous control of an ensemble of quantum dots with a single laser pulse. Finally, we apply optimal control techniques to demonstrate selective excitation of individual dots for a simultaneously controllable ensemble of quantum dots

  5. A 2x2 quantum dot array with controllable inter-dot tunnel couplings

    OpenAIRE

    Mukhopadhyay, Uditendu; Dehollain, Juan Pablo; Reichl, Christian; Wegscheider, Werner; Vandersypen, Lieven M. K.

    2018-01-01

    The interaction between electrons in arrays of electrostatically defined quantum dots is naturally described by a Fermi-Hubbard Hamiltonian. Moreover, the high degree of tunability of these systems make them a powerful platform to simulate different regimes of the Hubbard model. However, most quantum dot array implementations have been limited to one-dimensional linear arrays. In this letter, we present a square lattice unit cell of 2$\\times$2 quantum dots defined electrostatically in a AlGaA...

  6. Core–shell quantum dots: Properties and applications

    Energy Technology Data Exchange (ETDEWEB)

    Vasudevan, D., E-mail: vasudevand@rediffmail.com [Electrodics and electrocatalysis division, CSIR-CECRI, Karaikudi 630006 (India); Gaddam, Rohit Ranganathan [Amity Institute of Nanotechnology, Amity University, Noida 201301 (India); Trinchi, Adrian; Cole, Ivan [CSIRO Materials Science and Engineering, Clayton South MDC, 3169 (Australia)

    2015-07-05

    Fluorescent quantum dots (QDs) are semiconducting nanocrystals (NCs) that find numerous applications in areas, such as bio labelling, sensors, lasers, light emitting diodes and medicine. Core–shell quantum dots were developed to improve the photoluminescence efficiency of single quantum dots. Capping their surface with organic ligands as well as their extraction into aqueous media enables their use in sensing applications. The current review highlights the importance and applications of core shell quantum dots as well as their surface modifications and applications in the field of medicine and as sensors for chemical and biochemical analysis.

  7. Core–shell quantum dots: Properties and applications

    International Nuclear Information System (INIS)

    Vasudevan, D.; Gaddam, Rohit Ranganathan; Trinchi, Adrian; Cole, Ivan

    2015-01-01

    Fluorescent quantum dots (QDs) are semiconducting nanocrystals (NCs) that find numerous applications in areas, such as bio labelling, sensors, lasers, light emitting diodes and medicine. Core–shell quantum dots were developed to improve the photoluminescence efficiency of single quantum dots. Capping their surface with organic ligands as well as their extraction into aqueous media enables their use in sensing applications. The current review highlights the importance and applications of core shell quantum dots as well as their surface modifications and applications in the field of medicine and as sensors for chemical and biochemical analysis

  8. Polarized quantum dot emission in electrohydrodynamic jet printed photonic crystals

    International Nuclear Information System (INIS)

    See, Gloria G.; Xu, Lu; Nuzzo, Ralph G.; Sutanto, Erick; Alleyne, Andrew G.; Cunningham, Brian T.

    2015-01-01

    Tailored optical output, such as color purity and efficient optical intensity, are critical considerations for displays, particularly in mobile applications. To this end, we demonstrate a replica molded photonic crystal structure with embedded quantum dots. Electrohydrodynamic jet printing is used to control the position of the quantum dots within the device structure. This results in significantly less waste of the quantum dot material than application through drop-casting or spin coating. In addition, the targeted placement of the quantum dots minimizes any emission outside of the resonant enhancement field, which enables an 8× output enhancement and highly polarized emission from the photonic crystal structure

  9. Correlation effects in side-coupled quantum dots

    International Nuclear Information System (INIS)

    Zitko, R; Bonca, J

    2007-01-01

    Using Wilson's numerical renormalization group (NRG) technique, we compute zero-bias conductance and various correlation functions of a double quantum dot (DQD) system. We present different regimes within a phase diagram of the DQD system. By introducing a negative Hubbard U on one of the quantum dots, we simulate the effect of electron-phonon coupling and explore the properties of the coexisting spin and charge Kondo state. In a triple quantum dot (TQD) system, a multi-stage Kondo effect appears where localized moments on quantum dots are screened successively at exponentially distinct Kondo temperatures

  10. Single-charge tunneling in ambipolar silicon quantum dots

    NARCIS (Netherlands)

    Müller, Filipp

    2015-01-01

    Spin qubits in coupled quantum dots (QDs) are promising for future quantum information processing (QIP). A quantum bit (qubit) is the quantum mechanical analogon of a classical bit. In general, each quantum mechanical two-level system can represent a qubit. For the spin of a single charge carrier

  11. Initialization of a spin qubit in a site-controlled nanowire quantum dot

    International Nuclear Information System (INIS)

    Lagoudakis, Konstantinos G; McMahon, Peter L; Fischer, Kevin A; Müller, Kai; Yamamoto, Yoshihisa; Vučković, Jelena; Puri, Shruti; Dan Dalacu; Poole, Philip J; Reimer, Michael E; Zwiller, Val

    2016-01-01

    A fault-tolerant quantum repeater or quantum computer using solid-state spin-based quantum bits will likely require a physical implementation with many spins arranged in a grid. Self-assembled quantum dots (QDs) have been established as attractive candidates for building spin-based quantum information processing devices, but such QDs are randomly positioned, which makes them unsuitable for constructing large-scale processors. Recent efforts have shown that QDs embedded in nanowires can be deterministically positioned in regular arrays, can store single charges, and have excellent optical properties, but so far there have been no demonstrations of spin qubit operations using nanowire QDs. Here we demonstrate optical pumping of individual spins trapped in site-controlled nanowire QDs, resulting in high-fidelity spin-qubit initialization. This represents the next step towards establishing spins in nanowire QDs as quantum memories suitable for use in a large-scale, fault-tolerant quantum computer or repeater based on all-optical control of the spin qubits. (paper)

  12. A strongly interacting polaritonic quantum dot

    Science.gov (United States)

    Jia, Ningyuan; Schine, Nathan; Georgakopoulos, Alexandros; Ryou, Albert; Clark, Logan W.; Sommer, Ariel; Simon, Jonathan

    2018-06-01

    Polaritons are promising constituents of both synthetic quantum matter1 and quantum information processors2, whose properties emerge from their components: from light, polaritons draw fast dynamics and ease of transport; from matter, they inherit the ability to collide with one another. Cavity polaritons are particularly promising as they may be confined and subjected to synthetic magnetic fields controlled by cavity geometry3, and furthermore they benefit from increased robustness due to the cavity enhancement in light-matter coupling. Nonetheless, until now, cavity polaritons have operated only in a weakly interacting mean-field regime4,5. Here we demonstrate strong interactions between individual cavity polaritons enabled by employing highly excited Rydberg atoms as the matter component of the polaritons. We assemble a quantum dot composed of approximately 150 strongly interacting Rydberg-dressed 87Rb atoms in a cavity, and observe blockaded transport of photons through it. We further observe coherent photon tunnelling oscillations, demonstrating that the dot is zero-dimensional. This work establishes the cavity Rydberg polariton as a candidate qubit in a photonic information processor and, by employing multiple resonator modes as the spatial degrees of freedom of a photonic particle, the primary ingredient to form photonic quantum matter6.

  13. Quantum size effect and thermal stability of carbon-nanotube-based quantum dot

    International Nuclear Information System (INIS)

    Huang, N.Y.; Peng, J.; Liang, S.D.; Li, Z.B.; Xu, N.S.

    2004-01-01

    Full text: Based on semi-experience quantum chemical calculation, we have investigated the quantum size effect and thermal stability of open-end carbon nanotube (5, 5) quantum dots of 20 to 400 atoms. It was found that there is a gap in the energy band of all carbon nanotube (5, 5) quantum dots although a (5, 5) carbon nanotube is metallic. The energy gap of quantum dots is much dependent of the number of atoms in a dot, as a result of the quantization rules imposed by the finite scales in both radial and axial directions of a carbon nanotube quantum dot. Also, the heat of formation of carbon nanotube quantum dots is dependent of the size of a quantum dot. (author)

  14. Self-assembled nanostructures

    CERN Document Server

    Zhang, Jin Z; Liu, Jun; Chen, Shaowei; Liu, Gang-yu

    2003-01-01

    Nanostructures refer to materials that have relevant dimensions on the nanometer length scales and reside in the mesoscopic regime between isolated atoms and molecules in bulk matter. These materials have unique physical properties that are distinctly different from bulk materials. Self-Assembled Nanostructures provides systematic coverage of basic nanomaterials science including materials assembly and synthesis, characterization, and application. Suitable for both beginners and experts, it balances the chemistry aspects of nanomaterials with physical principles. It also highlights nanomaterial-based architectures including assembled or self-assembled systems. Filled with in-depth discussion of important applications of nano-architectures as well as potential applications ranging from physical to chemical and biological systems, Self-Assembled Nanostructures is the essential reference or text for scientists involved with nanostructures.

  15. Quantum plasmon and Rashba-like spin splitting in self-assembled Co x C60 composites with enhanced Co content (x > 15)

    Science.gov (United States)

    Lavrentiev, Vasily; Chvostova, Dagmar; Stupakov, Alexandr; Lavrentieva, Inna; Vacik, Jiri; Motylenko, Mykhaylo; Barchuk, Mykhailo; Rafaja, David; Dejneka, Alexandr

    2018-04-01

    Driving by interplay between plasmonic and magnetic effects in organic composite semiconductors is a challenging task with a huge potential for practical applications. Here, we present evidence of a quantum plasmon excited in the self-assembled Co x C60 nanocomposite films with x > 15 (interval of the Co cluster coalescence) and analyse it using the optical absorption (OA) spectra. In the case of Co x C60 film with x = 16 (LF sample), the quantum plasmon generated by the Co/CoO clusters is found as the 1.5 eV-centred OA peak. This finding is supported by the establishment of four specific C60-related OA lines detected at the photon energies E p > 2.5 eV. Increase of the Co content up to x = 29 (HF sample) leads to pronounced enhancement of OA intensity in the energy range of E p > 2.5 eV and to plasmonic peak downshift of 0.2 eV with respect to the peak position in the LF spectrum. Four pairs of the OA peaks evaluated in the HF spectrum at E p > 2.5 eV reflect splitting of the C60-related lines, suggesting great change in the microscopic conditions with increasing x. Analysis of the film nanostructure and the plasmon-induced conditions allows us to propose a Rashba-like spin splitting effect that suggests valuable sources for spin polarization.

  16. Hybrid passivated colloidal quantum dot solids

    KAUST Repository

    Ip, Alex

    2012-07-29

    Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electrong-"hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device. © 2012 Macmillan Publishers Limited. All rights reserved.

  17. Hybrid passivated colloidal quantum dot solids

    KAUST Repository

    Ip, Alex; Thon, Susanna; Hoogland, Sjoerd H.; Voznyy, Oleksandr; Zhitomirsky, David; Debnath, Ratan K.; Levina, Larissa; Rollny, Lisa R.; Carey, Graham H.; Fischer, Armin H.; Kemp, Kyle W.; Kramer, Illan J.; Ning, Zhijun; Labelle, André J.; Chou, Kang Wei; Amassian, Aram; Sargent, E. H.

    2012-01-01

    Colloidal quantum dot (CQD) films allow large-area solution processing and bandgap tuning through the quantum size effect. However, the high ratio of surface area to volume makes CQD films prone to high trap state densities if surfaces are imperfectly passivated, promoting recombination of charge carriers that is detrimental to device performance. Recent advances have replaced the long insulating ligands that enable colloidal stability following synthesis with shorter organic linkers or halide anions, leading to improved passivation and higher packing densities. Although this substitution has been performed using solid-state ligand exchange, a solution-based approach is preferable because it enables increased control over the balance of charges on the surface of the quantum dot, which is essential for eliminating midgap trap states. Furthermore, the solution-based approach leverages recent progress in metal:chalcogen chemistry in the liquid phase. Here, we quantify the density of midgap trap states in CQD solids and show that the performance of CQD-based photovoltaics is now limited by electrong-"hole recombination due to these states. Next, using density functional theory and optoelectronic device modelling, we show that to improve this performance it is essential to bind a suitable ligand to each potential trap site on the surface of the quantum dot. We then develop a robust hybrid passivation scheme that involves introducing halide anions during the end stages of the synthesis process, which can passivate trap sites that are inaccessible to much larger organic ligands. An organic crosslinking strategy is then used to form the film. Finally, we use our hybrid passivated CQD solid to fabricate a solar cell with a certified efficiency of 7.0%, which is a record for a CQD photovoltaic device. © 2012 Macmillan Publishers Limited. All rights reserved.

  18. Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si(001) surfaces

    International Nuclear Information System (INIS)

    Portavoce, A; Kammler, M; Hull, R; Reuter, M C; Ross, F M

    2006-01-01

    We investigate the fundamental mechanism by which self-assembled Ge islands can be nucleated at specific sites on Si(001) using ultra-low-dose focused ion beam (FIB) pre-patterning. Island nucleation is controlled by a nanotopography that forms after the implantation of Ga ions during subsequent thermal annealing of the substrate. This nanotopography evolves during the annealing stage, changing from a nanoscale annular depression associated with each focused ion beam spot to a nanoscale pit, and eventually disappearing (planarizing). The correspondence of Ge quantum dot nucleation sites to the focused ion beam features requires a growth surface upon which the nanotopography is preserved. A further key observation is that the Ge wetting layer thickness is reduced in patterned regions, allowing the formation of islands on the templated regions without nucleation elsewhere. These results provide routes to the greatly enhanced design and control of quantum dot distributions and dimensions

  19. Near-field strong coupling of single quantum dots.

    Science.gov (United States)

    Groß, Heiko; Hamm, Joachim M; Tufarelli, Tommaso; Hess, Ortwin; Hecht, Bert

    2018-03-01

    Strong coupling and the resultant mixing of light and matter states is an important asset for future quantum technologies. We demonstrate deterministic room temperature strong coupling of a mesoscopic colloidal quantum dot to a plasmonic nanoresonator at the apex of a scanning probe. Enormous Rabi splittings of up to 110 meV are accomplished by nanometer-precise positioning of the quantum dot with respect to the nanoresonator probe. We find that, in addition to a small mode volume of the nanoresonator, collective coherent coupling of quantum dot band-edge states and near-field proximity interaction are vital ingredients for the realization of near-field strong coupling of mesoscopic quantum dots. The broadband nature of the interaction paves the road toward ultrafast coherent manipulation of the coupled quantum dot-plasmon system under ambient conditions.

  20. Silicon Quantum Dots with Counted Antimony Donor Implants

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Meenakshi [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Pacheco, Jose L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Perry, Daniel Lee [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Garratt, E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Ten Eyck, Gregory A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Wendt, Joel R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Manginell, Ronald P. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Luhman, Dwight [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Bielejec, Edward S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Lilly, Michael [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies; Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies

    2015-10-01

    Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. A focused ion beam is used to implant close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of ions implanted can be counted to a precision of a single ion. Regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization, are observed in devices with counted implants.

  1. Electrostatically defined silicon quantum dots with counted antimony donor implants

    Energy Technology Data Exchange (ETDEWEB)

    Singh, M., E-mail: msingh@sandia.gov; Luhman, D. R.; Lilly, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87175 (United States); Pacheco, J. L.; Perry, D.; Garratt, E.; Ten Eyck, G.; Bishop, N. C.; Wendt, J. R.; Manginell, R. P.; Dominguez, J.; Pluym, T.; Bielejec, E.; Carroll, M. S. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

    2016-02-08

    Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows straddling quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular Coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.

  2. Raman spectroscopy of in situ annealed InAs/GaAs quantum dots

    International Nuclear Information System (INIS)

    Luna, M.J.M. de; Somintac, A.; Estacio, E.; Salvador, A.

    2004-01-01

    Nonresonant Raman scattering measurements were performed on a three-layered sample of in situ annealed InAs/GaAs self-assembled quantum dots. The thermal annealing step was done during the growth of each GaAs spacer layer, where the substrate temperature was raised from 530 deg. C to 580 deg. C as measured by a pyrometer. Three Raman signals are clearly seen at 264 cm -1 , 268 cm -1 , and 271.5 cm -1 which can be attributed to the longitudinal optic (LO) phonons of the dots. These three different signals are attributed to different degrees of In/Ga alloying or intermixing in each dot layer as a consequence of the different thermal treatments that each layer was subjected to. The Raman signal of the wetting layer (WL) is remarkably weak and suggests erosion of the wetting layer. In contrast, Raman scattering measurements on an unannealed sample show two overlapping features at 259.5 cm -1 and 261.5 cm -1 , which are attributed to the LO phonons of the dots. The WL signal is clearly observed at 251.5 cm -1 . To support our Raman observations, the appearance of a strong higher-energy peak in photoluminescence measurements suggests that alloying did occur in the annealed sample

  3. Trajectory phases of a quantum dot model

    International Nuclear Information System (INIS)

    Genway, Sam; Hickey, James M; Garrahan, Juan P; Armour, Andrew D

    2014-01-01

    We present a thermodynamic formalism to study the trajectories of charge transport through a quantum dot coupled to two leads in the resonant-level model. We show that a close analogue of equilibrium phase transitions exists for the statistics of transferred charge; by tuning an appropriate ‘counting field’, crossovers to different trajectory phases are possible. Our description reveals a mapping between the statistics of a given device and current measurements over a range of devices with different dot–lead coupling strengths. Furthermore insight into features of the trajectory phases are found by studying the occupation of the dot conditioned on the transported charge between the leads; this is calculated from first principles using a trajectory biased two-point projective measurement scheme. (paper)

  4. Colloidal Quantum Dot Photovoltaics: A Path Forward

    KAUST Repository

    Kramer, Illan J.

    2011-11-22

    Colloidal quantum dots (CQDs) offer a path toward high-efficiency photovoltaics based on low-cost materials and processes. Spectral tunability via the quantum size effect facilitates absorption of specific wavelengths from across the sun\\'s broad spectrum. CQD materials\\' ease of processing derives from their synthesis, storage, and processing in solution. Rapid advances have brought colloidal quantum dot photovoltaic solar power conversion efficiencies of 6% in the latest reports. These achievements represent important first steps toward commercially compelling performance. Here we review advances in device architecture and materials science. We diagnose the principal phenomenon-electronic states within the CQD film band gap that limit both current and voltage in devices-that must be cured for CQD PV devices to fulfill their promise. We close with a prescription, expressed as bounds on the density and energy of electronic states within the CQD film band gap, that should allow device efficiencies to rise to those required for the future of the solar energy field. © 2011 American Chemical Society.

  5. Electro-optic routing of photons from a single quantum dot in photonic integrated circuits

    Science.gov (United States)

    Midolo, Leonardo; Hansen, Sofie L.; Zhang, Weili; Papon, Camille; Schott, Rüdiger; Ludwig, Arne; Wieck, Andreas D.; Lodahl, Peter; Stobbe, Søren

    2017-12-01

    Recent breakthroughs in solid-state photonic quantum technologies enable generating and detecting single photons with near-unity efficiency as required for a range of photonic quantum technologies. The lack of methods to simultaneously generate and control photons within the same chip, however, has formed a main obstacle to achieving efficient multi-qubit gates and to harness the advantages of chip-scale quantum photonics. Here we propose and demonstrate an integrated voltage-controlled phase shifter based on the electro-optic effect in suspended photonic waveguides with embedded quantum emitters. The phase control allows building a compact Mach-Zehnder interferometer with two orthogonal arms, taking advantage of the anisotropic electro-optic response in gallium arsenide. Photons emitted by single self-assembled quantum dots can be actively routed into the two outputs of the interferometer. These results, together with the observed sub-microsecond response time, constitute a significant step towards chip-scale single-photon-source de-multiplexing, fiber-loop boson sampling, and linear optical quantum computing.

  6. Tunable single quantum dot nanocavities for cavity QED experiments

    International Nuclear Information System (INIS)

    Kaniber, M; Laucht, A; Neumann, A; Bichler, M; Amann, M-C; Finley, J J

    2008-01-01

    We present cavity quantum electrodynamics experiments performed on single quantum dots embedded in two-dimensional photonic crystal nanocavities. We begin by describing the structural and optical properties of the quantum dot sample and the photonic crystal nanocavities and compare the experimental results with three-dimensional calculations of the photonic properties. The influence of the tailored photonic environment on the quantum dot spontaneous emission dynamics is studied using spectrally and spatially dependent time-resolved spectroscopy. In ensemble and single dot measurements we show that the photonic crystals strongly enhance the photon extraction efficiency and, therefore, are a promising concept for realizing efficient single-photon sources. Furthermore, we demonstrate single-photon emission from an individual quantum dot that is spectrally detuned from the cavity mode. The need for controlling the spectral dot-cavity detuning is discussed on the basis of shifting either the quantum dot emission via temperature tuning or the cavity mode emission via a thin film deposition technique. Finally, we discuss the recently discovered non-resonant coupling mechanism between quantum dot emission and cavity mode for large detunings which drastically lowers the purity of single-photon emission from dots that are spectrally coupled to nanocavity modes.

  7. Systematic optimization of quantum junction colloidal quantum dot solar cells

    KAUST Repository

    Liu, Huan

    2012-01-01

    The recently reported quantum junction architecture represents a promising approach to building a rectifying photovoltaic device that employs colloidal quantum dot layers on each side of the p-n junction. Here, we report an optimized quantum junction solar cell that leverages an improved aluminum zinc oxide electrode for a stable contact to the n-side of the quantum junction and silver doping of the p-layer that greatly enhances the photocurrent by expanding the depletion region in the n-side of the device. These improvements result in greater stability and a power conversion efficiency of 6.1 under AM1.5 simulated solar illumination. © 2012 American Institute of Physics.

  8. Discrete quantum Fourier transform in coupled semiconductor double quantum dot molecules

    International Nuclear Information System (INIS)

    Dong Ping; Yang Ming; Cao Zhuoliang

    2008-01-01

    In this Letter, we present a physical scheme for implementing the discrete quantum Fourier transform in a coupled semiconductor double quantum dot system. The main controlled-R gate operation can be decomposed into many simple and feasible unitary transformations. The current scheme would be a useful step towards the realization of complex quantum algorithms in the quantum dot system

  9. Macroscopic magnetic Self assembly

    NARCIS (Netherlands)

    Löthman, Per Arvid

    2018-01-01

    Exploring the macroscopic scale's similarities to the microscale is part and parcel of this thesis as reflected in the research question: what can we learn about the microscopic scale by studying the macroscale? Investigations of the environment in which the self-assembly takes place, and the

  10. Nonequilibrium Electron Transport Through a Quantum Dot from Kubo Formula

    International Nuclear Information System (INIS)

    Lue Rong; Zhang Guangming

    2005-01-01

    Based on the Kubo formula for an electron tunneling junction, we revisit the nonequilibrium transport properties through a quantum dot. Since the Fermi level of the quantum dot is set by the conduction electrons of the leads, we calculate the electron current from the left side by assuming the quantum dot coupled to the right lead as another side of the tunneling junction, and the other way round is used to calculate the current from the right side. By symmetrizing these two currents, an effective local density states on the dot can be obtained, and is discussed at high and low temperatures, respectively.

  11. Quantum computation with nuclear spins in quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Christ, H.

    2008-01-24

    The role of nuclear spins for quantum information processing in quantum dots is theoretically investigated in this thesis. Building on the established fact that the most strongly coupled environment for the potential electron spin quantum bit are the surrounding lattice nuclear spins interacting via the hyperfine interaction, we turn this vice into a virtue by designing schemes for harnessing this strong coupling. In this perspective, the ensemble of nuclear spins can be considered an asset, suitable for an active role in quantum information processing due to its intrinsic long coherence times. We present experimentally feasible protocols for the polarization, i.e. initialization, of the nuclear spins and a quantitative solution to our derived master equation. The polarization limiting destructive interference effects, caused by the collective nature of the nuclear coupling to the electron spin, are studied in detail. Efficient ways of mitigating these constraints are presented, demonstrating that highly polarized nuclear ensembles in quantum dots are feasible. At high, but not perfect, polarization of the nuclei the evolution of an electron spin in contact with the spin bath can be efficiently studied by means of a truncation of the Hilbert space. It is shown that the electron spin can function as a mediator of universal quantum gates for collective nuclear spin qubits, yielding a promising architecture for quantum information processing. Furthermore, we show that at high polarization the hyperfine interaction of electron and nuclear spins resembles the celebrated Jaynes-Cummings model of quantum optics. This result opens the door for transfer of knowledge from the mature field of quantum computation with atoms and photons. Additionally, tailored specifically for the quantum dot environment, we propose a novel scheme for the generation of highly squeezed collective nuclear states. Finally we demonstrate that even an unprepared completely mixed nuclear spin

  12. Quantum computation with nuclear spins in quantum dots

    International Nuclear Information System (INIS)

    Christ, H.

    2008-01-01

    The role of nuclear spins for quantum information processing in quantum dots is theoretically investigated in this thesis. Building on the established fact that the most strongly coupled environment for the potential electron spin quantum bit are the surrounding lattice nuclear spins interacting via the hyperfine interaction, we turn this vice into a virtue by designing schemes for harnessing this strong coupling. In this perspective, the ensemble of nuclear spins can be considered an asset, suitable for an active role in quantum information processing due to its intrinsic long coherence times. We present experimentally feasible protocols for the polarization, i.e. initialization, of the nuclear spins and a quantitative solution to our derived master equation. The polarization limiting destructive interference effects, caused by the collective nature of the nuclear coupling to the electron spin, are studied in detail. Efficient ways of mitigating these constraints are presented, demonstrating that highly polarized nuclear ensembles in quantum dots are feasible. At high, but not perfect, polarization of the nuclei the evolution of an electron spin in contact with the spin bath can be efficiently studied by means of a truncation of the Hilbert space. It is shown that the electron spin can function as a mediator of universal quantum gates for collective nuclear spin qubits, yielding a promising architecture for quantum information processing. Furthermore, we show that at high polarization the hyperfine interaction of electron and nuclear spins resembles the celebrated Jaynes-Cummings model of quantum optics. This result opens the door for transfer of knowledge from the mature field of quantum computation with atoms and photons. Additionally, tailored specifically for the quantum dot environment, we propose a novel scheme for the generation of highly squeezed collective nuclear states. Finally we demonstrate that even an unprepared completely mixed nuclear spin

  13. Quantum-dot cluster-state computing with encoded qubits

    International Nuclear Information System (INIS)

    Weinstein, Yaakov S.; Hellberg, C. Stephen; Levy, Jeremy

    2005-01-01

    A class of architectures is advanced for cluster-state quantum computation using quantum dots. These architectures include using single and multiple dots as logical qubits. Special attention is given to supercoherent qubits introduced by Bacon et al. [Phys. Rev. Lett. 87, 247902 (2001)] for which we discuss the effects of various errors and present a means of error protection

  14. Exciton binding energy in a pyramidal quantum dot

    Indian Academy of Sciences (India)

    A ANITHA

    2018-03-27

    Mar 27, 2018 ... screening function on exciton binding energy in a pyramid-shaped quantum dot of ... tures may generate unique properties and they show .... where Ee is the ground-state energy of the electron in ... Figure 1. The geometry of the pyramidal quantum dot. base and H is the height of the pyramid which is taken.

  15. Coherent Dynamics of Quantum Dots in Photonic-Crystal Cavities

    DEFF Research Database (Denmark)

    Madsen, Kristian Høeg

    deviations. Similar measurements on a quantum dot in a photonic-crystal cavity sow a Rabi splitting on resonance, while time-resolved measurements prove that the system is in the weak coupling regime. Whle tuning the quantum dot through resonance of the high-Q mode we observe a strong and surprisingly...

  16. Electron transport and coherence in semiconductor quantum dots and rings

    NARCIS (Netherlands)

    Van der Wiel, W.G.

    2002-01-01

    A number of experiments on electron transport and coherence in semiconductor vertical and lateral quantum dots and semiconductor rings is described. Quantum dots are often referred to as "artificial atoms", because of their similarities with real atoms. Examples of such atom-like properties that

  17. Stark effect and polarizability of graphene quantum dots

    DEFF Research Database (Denmark)

    Pedersen, Thomas Garm

    2017-01-01

    The properties of graphene quantum dots can be manipulated via lateral electric fields. Treating electrons in such structures as confined massless Dirac fermions, we derive an analytical expression for the quadratic Stark shift valid for arbitrary angular momentum and quantum dot size. Moreover, we...

  18. Laterally coupled jellium-like two-dimensional quantum dots

    NARCIS (Netherlands)

    Markvoort, Albert. J.; Hilbers, P.A.J.; Pino, R.

    2003-01-01

    Many studies have been performed to describe quantum dots using a parabolic confining potential. However, infinite potentials are unphysical and lead to problems when describing laterally coupled quantum dots. We propose the use of the parabolic potential of a homogeneous density distribution within

  19. Fast synthesize ZnO quantum dots via ultrasonic method.

    Science.gov (United States)

    Yang, Weimin; Zhang, Bing; Ding, Nan; Ding, Wenhao; Wang, Lixi; Yu, Mingxun; Zhang, Qitu

    2016-05-01

    Green emission ZnO quantum dots were synthesized by an ultrasonic sol-gel method. The ZnO quantum dots were synthesized in various ultrasonic temperature and time. Photoluminescence properties of these ZnO quantum dots were measured. Time-resolved photoluminescence decay spectra were also taken to discover the change of defects amount during the reaction. Both ultrasonic temperature and time could affect the type and amount of defects in ZnO quantum dots. Total defects of ZnO quantum dots decreased with the increasing of ultrasonic temperature and time. The dangling bonds defects disappeared faster than the optical defects. Types of optical defects first changed from oxygen interstitial defects to oxygen vacancy and zinc interstitial defects. Then transformed back to oxygen interstitial defects again. The sizes of ZnO quantum dots would be controlled by both ultrasonic temperature and time as well. That is, with the increasing of ultrasonic temperature and time, the sizes of ZnO quantum dots first decreased then increased. Moreover, concentrated raw materials solution brought larger sizes and more optical defects of ZnO quantum dots. Copyright © 2015 Elsevier B.V. All rights reserved.

  20. Electroluminescent Cu-doped CdS quantum dots

    NARCIS (Netherlands)

    Stouwdam, J.W.; Janssen, R.A.J.

    2009-01-01

    Incorporating Cu-doped CdS quantum dots into a polymer host produces efficient light-emitting diodes. The Cu dopant creates a trap level that aligns with the valence band of the host, enabling the direct injection of holes into the quantum dots, which act as emitters. At low current densities, the

  1. Imaging vasculature and lymphatic flow in mice using quantum dots

    DEFF Research Database (Denmark)

    Ballou, Byron; Ernst, Lauren A.; Andreko, Susan

    2009-01-01

    Quantum dots are ideal probes for fluorescent imaging of vascular and lymphatic tissues. On injection into appropriate sites, red- and near-infrared-emitting quantum dots provide excellent definition of vasculature, lymphoid organs, and lymph nodes draining both normal tissues and tumors. We detail...

  2. Fractional decay of quantum dots in photonic crystals

    DEFF Research Database (Denmark)

    Kristensen, Philip Trøst; Koenderink, Femius; Lodahl, Peter

    2008-01-01

    We define a practical measure for the degree of fractional decay and establish conditions for the effect to be observable for quantum dots in photonic crystals exhibiting absorptive losses.......We define a practical measure for the degree of fractional decay and establish conditions for the effect to be observable for quantum dots in photonic crystals exhibiting absorptive losses....

  3. High-resolution photoluminescence studies of single semiconductor quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

    2000-01-01

    Semiconductor quantum dots, especially those formed by self-organized growth, are considered a promising material system for future optical devices [1] and the optical properties of quantum dot ensembles have been investigated in detail over the past years. Recently, considerable interest has...

  4. Polarized electrons, trions, and nuclei in charged quantum dots

    Science.gov (United States)

    Bracker, A. S.; Tischler, J. G.; Korenev, V. L.; Gammon, D.

    2003-07-01

    We have investigated spin polarization in GaAs quantum dots. Excitons and trions are polarized directly by optical excitation and studied through polarization of photoluminescence. Electrons and nuclei are polarized indirectly through subsequent relaxation processes. Polarized electrons are identified by the Hanle effect for exciton and trion photoluminescence, while polarized nuclei are identified through the Overhauser effect in individual charged quantum dots.

  5. Electronic properties of assemblies of zno quantum dots

    NARCIS (Netherlands)

    Roest, Aarnoud Laurens

    2003-01-01

    Electron transport in an assembly of ZnO quantum dots has been studied using an electrochemically gated transistor. The electron mobility shows a step-wise increase as a function of the electron occupation per quantum dot. When the occupation number is below two, transport occurs by tunnelling

  6. Phonon-assisted decoherence and tunneling in quantum dot molecules

    DEFF Research Database (Denmark)

    Grodecka-Grad, Anna; Foerstner, Jens

    2011-01-01

    processes with relevant acoustic phonons. We show that the relaxation is dominated by phonon-assisted electron tunneling between constituent quantum dots and occurs on a picosecond time scale. The dependence of the time evolution of the quantum dot occupation probabilities on the energy mismatch between...

  7. Optical properties of a tip-induced quantum dot

    NARCIS (Netherlands)

    Kemerink, M.; Sauthoff, K.; Koenraad, P.M.; Gerritsen, J.W.; Kempen, van H.; Fomin, V.M.; Wolter, J.H.; Devreese, J.T.; Miura, N.; Ando, T.

    2001-01-01

    We have performed optical spectroscopy measurements on an STM-tip-induced quantum dot. The dominant confinement in the (hole) quantum dot is in the direction parallel to the tip axis. Electron confinement is achieved by a sub-surface AlGaAs barrier. Current dependent measurements indicate that

  8. Electroluminescence spectra of an STM-tip-induced quantum dot

    NARCIS (Netherlands)

    Croitoru, M.D.; Gladilin, V.N.; Fomin, V.; Devreese, J.T.; Kemerink, M.; Koenraad, P.M.; Sauthoff, K.; Wolter, J.H.; Long, A.R.; Davies, J.H.

    2003-01-01

    We analyse the electroluminescence measurements performed on a STM-tipImduced quantum dot in a GaAs layer. Positions of electroluminescence peaks, attributed to the electron-hole recombination in the quantum dot, are very sensitive to the electron tunnelling current even in the case when the current

  9. Quantum dot loaded immunomicelles for tumor imaging

    Directory of Open Access Journals (Sweden)

    Levchenko Tatyana

    2010-10-01

    Full Text Available Abstract Background Optical imaging is a promising method for the detection of tumors in animals, with speed and minimal invasiveness. We have previously developed a lipid coated quantum dot system that doubles the fluorescence of PEG-grafted quantum dots at half the dose. Here, we describe a tumor-targeted near infrared imaging agent composed of cancer-specific monoclonal anti-nucleosome antibody 2C5, coupled to quantum dot (QD-containing polymeric micelles, prepared from a polyethylene glycol/phosphatidylethanolamine (PEG-PE conjugate. Its production is simple and involves no special equipment. Its imaging potential is great since the fluorescence intensity in the tumor is twofold that of non-targeted QD-loaded PEG-PE micelles at one hour after injection. Methods Para-nitrophenol-containing (5% PEG-PE quantum dot micelles were produced by the thin layer method. Following hydration, 2C5 antibody was attached to the PEG-PE micelles and the QD-micelles were purified using dialysis. 4T1 breast tumors were inoculated subcutaneously in the flank of the animals. A lung pseudometastatic B16F10 melanoma model was developed using tail vein injection. The contrast agents were injected via the tail vein and mice were depilated, anesthetized and imaged on a Kodak Image Station. Images were taken at one, two, and four hours and analyzed using a methodology that produces normalized signal-to-noise data. This allowed for the comparison between different subjects and time points. For the pseudometastatic model, lungs were removed and imaged ex vivo at one and twenty four hours. Results The contrast agent signal intensity at the tumor was double that of the passively targeted QD-micelles with equally fast and sharply contrasted images. With the side views of the animals only tumor is visible, while in the dorsal view internal organs including liver and kidney are visible. Ex vivo results demonstrated that the agent detects melanoma nodes in a lung

  10. Quantum Dots for Molecular Diagnostics of Tumors

    Science.gov (United States)

    Zdobnova, T.A.; Lebedenko, E.N.; Deyev, S.М.

    2011-01-01

    Semiconductor quantum dots (QDs) are a new class of fluorophores with unique physical and chemical properties, which allow to appreciably expand the possibilities for the current methods of fluorescent imaging and optical diagnostics. Here we discuss the prospects of QD application for molecular diagnostics of tumors ranging from cancer-specific marker detection on microplates to non-invasive tumor imagingin vivo. We also point out the essential problems that require resolution in order to clinically promote QD, and we indicate innovative approaches to oncology which are implementable using QD. PMID:22649672

  11. Core/Shell Conjugated Polymer/Quantum Dot Composite Nanofibers through Orthogonal Non-Covalent Interactions

    Directory of Open Access Journals (Sweden)

    Brad W. Watson

    2016-11-01

    Full Text Available Nanostructuring organic polymers and organic/inorganic hybrid materials and controlling blend morphologies at the molecular level are the prerequisites for modern electronic devices including biological sensors, light emitting diodes, memory devices and solar cells. To achieve all-around high performance, multiple organic and inorganic entities, each designed for specific functions, are commonly incorporated into a single device. Accurate arrangement of these components is a crucial goal in order to achieve the overall synergistic effects. We describe here a facile methodology of nanostructuring conjugated polymers and inorganic quantum dots into well-ordered core/shell composite nanofibers through cooperation of several orthogonal non-covalent interactions including conjugated polymer crystallization, block copolymer self-assembly and coordination interactions. Our methods provide precise control on the spatial arrangements among the various building blocks that are otherwise incompatible with one another, and should find applications in modern organic electronic devices such as solar cells.

  12. Light effects in asymmetric vertically coupled InAs/GaAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Stavrou, V.N., E-mail: vstavrou@newton.physics.uiowa.edu

    2015-12-15

    In this paper, the dependence of circular light polarization on the size asymmetry of self-assembled coupled quantum dots (SACQDs) has been studied. The heterostructure consists of ellipsoidal shaped QDs made with InAs which are embedded in a wetting layer and are surrounded by GaAs. By considering fully spin-polarized carriers within the QD structure, the light polarization has been estimated along the plane of spin polarized electrons (or holes). Circularly polarized light strongly depends on the ratio related to the different QD volumes. In the case of elongated QDs, small interdot distance and large volume ratio, the light polarization observed along the plane (110) receives the largest value (∼90%). On the other hand, the polarization efficiency of the emitted light decreases as the QD elongation decreases and finally vanishes for axially symmetric QD caps.

  13. Size filtering effect in vertical stacks of In(Ga)As/GaAs self-assembled quantum rings

    International Nuclear Information System (INIS)

    Ouerghui, W.; Melliti, A.; Maaref, M.A.; Martinez-Pastor, J.; Gomis, J.; Granados, D.; Garcia, J.M.

    2006-01-01

    We present a systematic study of closely In(Ga)As/InAs quantum rings (QRs) grown by molecular beam epitaxy (MBE). Photoluminescence (PL) experiments show a strong filtering effect in the ring being stacked and simultaneous linewidth narrowing for the appropriate layer thickness (thinner thickness). If the spacer thickness is further reduced, a strong coupling between the nanostructures is produced and the signal shifts to low energy

  14. Transcending binary logic by gating three coupled quantum dots.

    Science.gov (United States)

    Klein, Michael; Rogge, S; Remacle, F; Levine, R D

    2007-09-01

    Physical considerations supported by numerical solution of the quantum dynamics including electron repulsion show that three weakly coupled quantum dots can robustly execute a complete set of logic gates for computing using three valued inputs and outputs. Input is coded as gating (up, unchanged, or down) of the terminal dots. A nanosecond time scale switching of the gate voltage requires careful numerical propagation of the dynamics. Readout is the charge (0, 1, or 2 electrons) on the central dot.

  15. Electrical control of single hole spins in nanowire quantum dots

    NARCIS (Netherlands)

    Pribiag, V.S.; Nadj-Perge, S.; Frolov, S.M.; Berg, J.W.G.; Weperen, van I.; Plissard, S.R.; Bakkers, E.P.A.M.; Kouwenhoven, L.P.

    2013-01-01

    The development of viable quantum computation devices will require the ability to preserve the coherence of quantum bits (qubits)1. Single electron spins in semiconductor quantum dots are a versatile platform for quantum information processing, but controlling decoherence remains a considerable

  16. Numerical simulation of optical feedback on a quantum dot lasers

    Energy Technology Data Exchange (ETDEWEB)

    Al-Khursan, Amin H., E-mail: ameen_2all@yahoo.com [Thi-Qar University, Nassiriya Nanotechnology Research Laboratory (NNRL), Science College (Iraq); Ghalib, Basim Abdullattif [Babylon University, Laser Physics Department, Science College for Women (Iraq); Al-Obaidi, Sabri J. [Al-Mustansiriyah University, Physics Department, Science College (Iraq)

    2012-02-15

    We use multi-population rate equations model to study feedback oscillations in the quantum dot laser. This model takes into account all peculiar characteristics in the quantum dots such as inhomogeneous broadening of the gain spectrum, the presence of the excited states on the quantum dot and the non-confined states due to the presence of wetting layer and the barrier. The contribution of quantum dot groups, which cannot follow by other models, is simulated. The results obtained from this model show the feedback oscillations, the periodic oscillations which evolves to chaos at higher injection current of higher feedback levels. The frequency fluctuation is attributed mainly to wetting layer with a considerable contribution from excited states. The simulation shows that is must be not using simple rate equation models to express quantum dots working at excited state transition.

  17. 3D super-resolution imaging with blinking quantum dots

    Science.gov (United States)

    Wang, Yong; Fruhwirth, Gilbert; Cai, En; Ng, Tony; Selvin, Paul R.

    2013-01-01

    Quantum dots are promising candidates for single molecule imaging due to their exceptional photophysical properties, including their intense brightness and resistance to photobleaching. They are also notorious for their blinking. Here we report a novel way to take advantage of quantum dot blinking to develop an imaging technique in three-dimensions with nanometric resolution. We first applied this method to simulated images of quantum dots, and then to quantum dots immobilized on microspheres. We achieved imaging resolutions (FWHM) of 8–17 nm in the x-y plane and 58 nm (on coverslip) or 81 nm (deep in solution) in the z-direction, approximately 3–7 times better than what has been achieved previously with quantum dots. This approach was applied to resolve the 3D distribution of epidermal growth factor receptor (EGFR) molecules at, and inside of, the plasma membrane of resting basal breast cancer cells. PMID:24093439

  18. Enhanced intratumoral uptake of quantum dots concealed within hydrogel nanoparticles

    International Nuclear Information System (INIS)

    Nair, Ashwin; Shen Jinhui; Thevenot, Paul; Zou Ling; Tang Liping; Cai Tong; Hu Zhibing

    2008-01-01

    Effective nanomedical devices for tumor imaging and drug delivery are not yet available. In an attempt to construct a more functional device for tumor imaging, we have embedded quantum dots (which have poor circulatory behavior) within hydrogel nanoparticles made of poly-N-isopropylacrylamide. We found that the hydrogel encapsulated quantum dots are more readily taken up by cultured tumor cells. Furthermore, in a melanoma model, hydrogel encapsulated quantum dots also preferentially accumulate in the tumor tissue compared with normal tissue and have ∼16-fold greater intratumoral uptake compared to non-derivatized quantum dots. Our results suggest that these derivatized quantum dots, which have greatly improved tumor localization, may enhance cancer monitoring and chemotherapy.

  19. Interaction of porphyrins with CdTe quantum dots

    International Nuclear Information System (INIS)

    Zhang Xing; Liu Zhongxin; Ma Lun; Hossu, Marius; Chen Wei

    2011-01-01

    Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.

  20. Non-blinking quantum dot with a plasmonic nanoshell resonator

    Science.gov (United States)

    Ji, Botao; Giovanelli, Emerson; Habert, Benjamin; Spinicelli, Piernicola; Nasilowski, Michel; Xu, Xiangzhen; Lequeux, Nicolas; Hugonin, Jean-Paul; Marquier, Francois; Greffet, Jean-Jacques; Dubertret, Benoit

    2015-02-01

    Colloidal semiconductor quantum dots are fluorescent nanocrystals exhibiting exceptional optical properties, but their emission intensity strongly depends on their charging state and local environment. This leads to blinking at the single-particle level or even complete fluorescence quenching, and limits the applications of quantum dots as fluorescent particles. Here, we show that a single quantum dot encapsulated in a silica shell coated with a continuous gold nanoshell provides a system with a stable and Poissonian emission at room temperature that is preserved regardless of drastic changes in the local environment. This novel hybrid quantum dot/silica/gold structure behaves as a plasmonic resonator with a strong Purcell factor, in very good agreement with simulations. The gold nanoshell also acts as a shield that protects the quantum dot fluorescence and enhances its resistance to high-power photoexcitation or high-energy electron beams. This plasmonic fluorescent resonator opens the way to a new family of plasmonic nanoemitters with robust optical properties.

  1. Semiconductor quantum dot-sensitized solar cells.

    Science.gov (United States)

    Tian, Jianjun; Cao, Guozhong

    2013-10-31

    Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future.

  2. Electron states in semiconductor quantum dots

    International Nuclear Information System (INIS)

    Dhayal, Suman S.; Ramaniah, Lavanya M.; Ruda, Harry E.; Nair, Selvakumar V.

    2014-01-01

    In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications

  3. FAST TRACK COMMUNICATION: Graphene based quantum dots

    Science.gov (United States)

    Zhang, H. G.; Hu, H.; Pan, Y.; Mao, J. H.; Gao, M.; Guo, H. M.; Du, S. X.; Greber, T.; Gao, H.-J.

    2010-08-01

    Laterally localized electronic states are identified on a single layer of graphene on ruthenium by low temperature scanning tunneling spectroscopy (STS). The individual states are separated by 3 nm and comprise regions of about 90 carbon atoms. This constitutes a highly regular quantum dot-array with molecular precision. It is evidenced by quantum well resonances (QWRs) with energies that relate to the corrugation of the graphene layer. The dI/dV conductance spectra are modeled by a layer height dependent potential-well with a delta-function potential that describes the barrier for electron penetration into graphene. The resulting QWRs are strongest and lowest in energy on the isolated 'hill' regions with a diameter of 2 nm, where the graphene is decoupled from the surface.

  4. Quantum dot systems: artificial atoms with tunable properties

    International Nuclear Information System (INIS)

    Weis, J.

    2005-01-01

    Full text: Quantum dots - also called zero-dimensional electron systems or artificial atoms - are physical objects where the constituent electrons are confined in a small spatial region, leading to discrete eigenvalues for the energies of the confined electrons. Large quantum dots offer a dense energy spectrum comparable to that of metallic grains, whereas small quantum dots more closely resemble atoms in their electronic properties. Quantum dots can be linked to leads by tunnel barriers, hence permitting electrical transport measurements: Coulomb blockade and single-electron charging effects are observed due to the repulsive electron electron interaction on the quantum dot site. Usually fabricated by conventional semiconductor growth and processing technology, the advantage is that both simple and also more complex quantum dot systems can be designed to purpose, acting as model systems with in-situ tunable parameters such as the number of confined electrons in the quantum dot and the strength of the tunnel coupling to the leads, electrostatically controlled by the applied voltages to gate electrodes. With increasing the tunnel coupling to the leads, the virtual occupation of the quantum dot from the leads becomes more and more important -- the simple description of electrical transport by single-electron tunneling events breaks down. The basic physics is described by the Kondo physics based on the Anderson impurity model. A system consisting of strongly electrostatically coupled quantum dots with separate leads to each quantum dot represent another realization of the Anderson impurity model. Experiments to verify the analogy are presented. The experimental data embedded within this tutorial have been obtained with Alexander Huebel, Matthias Keller, Joerg Schmid, David Quirion, Armin Welker, Ulf Wilhelm, and Klaus von Klitzing. (author)

  5. In situ intercalation strategies for device-quality hybrid inorganic-organic self-assembled quantum wells

    Science.gov (United States)

    Pradeesh, K.; Baumberg, J. J.; Prakash, G. Vijaya

    2009-07-01

    Thin films of self-organized quantum wells of inorganic-organic hybrid perovskites of (C6H9C2H4NH3)2PbI4 are formed from a simple intercalation strategy to yield well-ordered uniform films over centimeter-size scales. These films compare favorably with traditional solution-chemistry-synthesized thin films. The hybrid films show strong room-temperature exciton-related absorption and photoluminescence, which shift with fabrication protocol. We demonstrate the potential of this method for electronic and photonic device applications.

  6. Andreev molecules in semiconductor nanowire double quantum dots.

    Science.gov (United States)

    Su, Zhaoen; Tacla, Alexandre B; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Daley, Andrew J; Pekker, David; Frolov, Sergey M

    2017-09-19

    Chains of quantum dots coupled to superconductors are promising for the realization of the Kitaev model of a topological superconductor. While individual superconducting quantum dots have been explored, control of longer chains requires understanding of interdot coupling. Here, double quantum dots are defined by gate voltages in indium antimonide nanowires. High transparency superconducting niobium titanium nitride contacts are made to each of the dots in order to induce superconductivity, as well as probe electron transport. Andreev bound states induced on each of dots hybridize to define Andreev molecular states. The evolution of these states is studied as a function of charge parity on the dots, and in magnetic field. The experiments are found in agreement with a numerical model.Quantum dots in a nanowire are one possible approach to creating a solid-state quantum simulator. Here, the authors demonstrate the coupling of electronic states in a double quantum dot to form Andreev molecule states; a potential building block for longer chains suitable for quantum simulation.

  7. Effect of visible and UV irradiation on the aggregation stability of CdTe quantum dots

    International Nuclear Information System (INIS)

    Tsipotan, Aleksei S.; Gerasimova, Marina A.; Aleksandrovsky, Aleksandr S.; Zharkov, Sergey M.; Slabko, Vitaliy V.

    2016-01-01

    The possibility of controlling the aggregation stability of CdTe quantum dots (QDs) stabilized by thioglycolic acid (TGA) is important for implementation of quasi-resonant laser-induced self-assembly. This study examines the influence of irradiation by the UV as well as by the visible light on the photostimulated aggregation of QDs. Different photochemical mechanisms are identified, depending on whether light wavelength falls into an interband transition or the first exciton transition. Irradiation by visible light does not lead to changes in the absorption spectra but decreases luminescence intensity through the detachment of TGA and the formation of dangling bonds, leading to the creation of radiativeless relaxation centers. UV irradiation (in the 300–370 nm range), at an intensity of 0.4 W/cm"2, initially (during the first 75 min) leads to the degradation of the stabilizer and QDs’ surface. After 75 min of combined UV and visible light irradiation, a gradual increase in spontaneous aggregation takes place, testifying excessive decrease in stabilizing potential barrier height. Hence, the laser-induced self-assembly of CdTe QDs is recommended to be performed over a time period of between 80 and 100 min after the beginning of low-intensity UV irradiation under conditions equivalent to those applied in this study.

  8. Effect of visible and UV irradiation on the aggregation stability of CdTe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Tsipotan, Aleksei S.; Gerasimova, Marina A.; Aleksandrovsky, Aleksandr S., E-mail: aleksandrovsky@kirensky.ru; Zharkov, Sergey M.; Slabko, Vitaliy V. [Siberian Federal University (Russian Federation)

    2016-11-15

    The possibility of controlling the aggregation stability of CdTe quantum dots (QDs) stabilized by thioglycolic acid (TGA) is important for implementation of quasi-resonant laser-induced self-assembly. This study examines the influence of irradiation by the UV as well as by the visible light on the photostimulated aggregation of QDs. Different photochemical mechanisms are identified, depending on whether light wavelength falls into an interband transition or the first exciton transition. Irradiation by visible light does not lead to changes in the absorption spectra but decreases luminescence intensity through the detachment of TGA and the formation of dangling bonds, leading to the creation of radiativeless relaxation centers. UV irradiation (in the 300–370 nm range), at an intensity of 0.4 W/cm{sup 2}, initially (during the first 75 min) leads to the degradation of the stabilizer and QDs’ surface. After 75 min of combined UV and visible light irradiation, a gradual increase in spontaneous aggregation takes place, testifying excessive decrease in stabilizing potential barrier height. Hence, the laser-induced self-assembly of CdTe QDs is recommended to be performed over a time period of between 80 and 100 min after the beginning of low-intensity UV irradiation under conditions equivalent to those applied in this study.

  9. Colloidal quantum dot light-emitting devices

    Directory of Open Access Journals (Sweden)

    Vanessa Wood

    2010-07-01

    Full Text Available Colloidal quantum dot light-emitting devices (QD-LEDs have generated considerable interest for applications such as thin film displays with improved color saturation and white lighting with a high color rendering index (CRI. We review the key advantages of using quantum dots (QDs in display and lighting applications, including their color purity, solution processability, and stability. After highlighting the main developments in QD-LED technology in the past 15 years, we describe the three mechanisms for exciting QDs – optical excitation, Förster energy transfer, and direct charge injection – that have been leveraged to create QD-LEDs. We outline the challenges facing QD-LED development, such as QD charging and QD luminescence quenching in QD thin films. We describe how optical downconversion schemes have enabled researchers to overcome these challenges and develop commercial lighting products that incorporate QDs to achieve desirable color temperature and a high CRI while maintaining efficiencies comparable to inorganic white LEDs (>65 lumens per Watt. We conclude by discussing some current directions in QD research that focus on achieving higher efficiency and air-stable QD-LEDs using electrical excitation of the luminescent QDs.

  10. Using quantum dot photoluminescence for load detection

    Science.gov (United States)

    Moebius, M.; Martin, J.; Hartwig, M.; Baumann, R. R.; Otto, T.; Gessner, T.

    2016-08-01

    We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N',N'-Tetrakis(3-methylphenyl)-3,3'-dimethylbenzidine (HMTPD) and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

  11. Quantum dots for lasers, amplifiers and computing

    International Nuclear Information System (INIS)

    Bimberg, Dieter

    2005-01-01

    For InAs-GaAs based quantum dot lasers emitting at 1300 nm, digital modulation showing an open eye pattern up to 12 Gb s -1 at room temperature is demonstrated, at 10 Gb s -1 the bit error rate is below 10 -12 at -2 dB m receiver power. Cut-off frequencies up to 20 GHz are realised for lasers emitting at 1.1 μm. Passively mode-locked QD lasers generate optical pulses with repetition frequencies between 5 and 50 GHz, with a minimum Fourier limited pulse length of 3 ps. The uncorrelated jitter is below 1 ps. We use here deeply etched narrow ridge waveguide structures which show excellent performance similar to shallow mesa structures, but a circular far field at a ridge width of 1 μm, improving coupling efficiency into fibres. No beam filamentation of the fundamental mode, low a-factors and strongly reduced sensitivity to optical feedback are observed. QD lasers are thus superior to QW lasers for any system or network. Quantum dot semiconductor optical amplifier (QD SOAs) demonstrate gain recovery times of 120-140 fs, 4-7 times faster than bulk/QW SOAs, and a net gain larger than 0.4 dB/(mm*QD-layer) providing us with novel types of booster amplifiers and Mach-Zehnder interferometers. These breakthroughs became possible due to systematic development of self-organized growth technologies

  12. Using quantum dot photoluminescence for load detection

    Directory of Open Access Journals (Sweden)

    M. Moebius

    2016-08-01

    Full Text Available We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N′,N′-Tetrakis(3-methylphenyl-3,3′-dimethylbenzidine (HMTPD and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

  13. Fourier transform spectra of quantum dots

    Science.gov (United States)

    Damian, V.; Ardelean, I.; Armăşelu, Anca; Apostol, D.

    2010-05-01

    Semiconductor quantum dots are nanometer-sized crystals with unique photochemical and photophysical properties that are not available from either isolated molecules or bulk solids. These nanocrystals absorb light over a very broad spectral range as compared to molecular fluorophores which have very narrow excitation spectra. High-quality QDs are proper to be use in different biological and medical applications (as fluorescent labels, the cancer treatment and the drug delivery). In this article, we discuss Fourier transform visible spectroscopy of commercial quantum dots. We reveal that QDs produced by Evident Technologies when are enlightened by laser or luminescent diode light provides a spectral shift of their fluorescence spectra correlated to exciting emission wavelengths, as shown by the ARCspectroNIR Fourier Transform Spectrometer. In the final part of this paper we show an important biological application of CdSe/ZnS core-shell ODs as microbial labeling both for pure cultures of cyanobacteria (Synechocystis PCC 6803) and for mixed cultures of phototrophic and heterotrophic microorganisms.

  14. Charge-extraction strategies for colloidal quantum dot photovoltaics

    KAUST Repository

    Lan, Xinzheng

    2014-02-20

    The solar-power conversion efficiencies of colloidal quantum dot solar cells have advanced from sub-1% reported in 2005 to a record value of 8.5% in 2013. Much focus has deservedly been placed on densifying, passivating and crosslinking the colloidal quantum dot solid. Here we review progress in improving charge extraction, achieved by engineering the composition and structure of the electrode materials that contact the colloidal quantum dot film. New classes of structured electrodes have been developed and integrated to form bulk heterojunction devices that enhance photocharge extraction. Control over band offsets, doping and interfacial trap state densities have been essential for achieving improved electrical communication with colloidal quantum dot solids. Quantum junction devices that not only tune the optical absorption spectrum, but also provide inherently matched bands across the interface between p-and n-materials, have proven that charge separation can occur efficiently across an all-quantum-tuned rectifying junction. © 2014 Macmillan Publishers Limited.

  15. Ferritin-Templated Quantum-Dots for Quantum Logic Gates

    Science.gov (United States)

    Choi, Sang H.; Kim, Jae-Woo; Chu, Sang-Hyon; Park, Yeonjoon; King, Glen C.; Lillehei, Peter T.; Kim, Seon-Jeong; Elliott, James R.

    2005-01-01

    Quantum logic gates (QLGs) or other logic systems are based on quantum-dots (QD) with a stringent requirement of size uniformity. The QD are widely known building units for QLGs. The size control of QD is a critical issue in quantum-dot fabrication. The work presented here offers a new method to develop quantum-dots using a bio-template, called ferritin, that ensures QD production in uniform size of nano-scale proportion. The bio-template for uniform yield of QD is based on a ferritin protein that allows reconstitution of core material through the reduction and chelation processes. One of the biggest challenges for developing QLG is the requirement of ordered and uniform size of QD for arrays on a substrate with nanometer precision. The QD development by bio-template includes the electrochemical/chemical reconsitution of ferritins with different core materials, such as iron, cobalt, manganese, platinum, and nickel. The other bio-template method used in our laboratory is dendrimers, precisely defined chemical structures. With ferritin-templated QD, we fabricated the heptagonshaped patterned array via direct nano manipulation of the ferritin molecules with a tip of atomic force microscope (AFM). We also designed various nanofabrication methods of QD arrays using a wide range manipulation techniques. The precise control of the ferritin-templated QD for a patterned arrangement are offered by various methods, such as a site-specific immobilization of thiolated ferritins through local oxidation using the AFM tip, ferritin arrays induced by gold nanoparticle manipulation, thiolated ferritin positioning by shaving method, etc. In the signal measurements, the current-voltage curve is obtained by measuring the current through the ferritin, between the tip and the substrate for potential sweeping or at constant potential. The measured resistance near zero bias was 1.8 teraohm for single holoferritin and 5.7 teraohm for single apoferritin, respectively.

  16. Spin-based all-optical quantum computation with quantum dots: Understanding and suppressing decoherence

    International Nuclear Information System (INIS)

    Calarco, T.; Datta, A.; Fedichev, P.; Zoller, P.; Pazy, E.

    2003-01-01

    We present an all-optical implementation of quantum computation using semiconductor quantum dots. Quantum memory is represented by the spin of an excess electron stored in each dot. Two-qubit gates are realized by switching on trion-trion interactions between different dots. State selectivity is achieved via conditional laser excitation exploiting Pauli exclusion principle. Read out is performed via a quantum-jump technique. We analyze the effect on our scheme's performance of the main imperfections present in real quantum dots: exciton decay, hole mixing, and phonon decoherence. We introduce an adiabatic gate procedure that allows one to circumvent these effects and evaluate quantitatively its fidelity

  17. Transport through a vibrating quantum dot: Polaronic effects

    International Nuclear Information System (INIS)

    Koch, T; Alvermann, A; Fehske, H; Loos, J; Bishop, A R

    2010-01-01

    We present a Green's function based treatment of the effects of electron-phonon coupling on transport through a molecular quantum dot in the quantum limit. Thereby we combine an incomplete variational Lang-Firsov approach with a perturbative calculation of the electron-phonon self energy in the framework of generalised Matsubara Green functions and a Landauer-type transport description. Calculating the ground-state energy, the dot single-particle spectral function and the linear conductance at finite carrier density, we study the low-temperature transport properties of the vibrating quantum dot sandwiched between metallic leads in the whole electron-phonon coupling strength regime. We discuss corrections to the concept of an anti-adiabatic dot polaron and show how a deformable quantum dot can act as a molecular switch.

  18. Spin current through quantum-dot spin valves

    International Nuclear Information System (INIS)

    Wang, J; Xing, D Y

    2006-01-01

    We report a theoretical study of the influence of the Coulomb interaction on the equilibrium spin current in a quantum-dot spin valve, in which the quantum dot described by the Anderson impurity model is coupled to two ferromagnetic leads with noncollinear magnetizations. In the Kondo regime, electrons transmit through the quantum dot via higher-order virtual processes, in which the spin of either lead electrons or a localized electron on the quantum dot may reverse. It is found that the magnitude of the spin current decreases with increasing Coulomb interactions due to spin flip effects on the dot. However, the spatial direction of the spin current remains unchanged; it is determined only by the exchange coupling between two noncollinear magnetizations

  19. Photoinduced electric dipole in CuCl quantum dots

    International Nuclear Information System (INIS)

    Masumoto, Yasuaki; Naruse, Fumitaka; Kanno, Atsushi

    2003-01-01

    Electromodulated absorption spectra of CuCl quantum dots modulated at twice the modulation frequency of electric field, 2f, show prominent structure around persistently burned hole. It grows in proportion to square of the electric field in the same manner as the 2f component of electromodulated absorption spectra of the dots without the laser exposure. Even the f component of electromodulated signal was observed around the burned hole position. These observations are explained by considering electric dipole formed in hole burned and photoionized quantum dots. Photoionization not only produces persistent spectral hole burning but also the local built-in electric field and photoinduced dipole moment in quantum dots. The dipole moment is estimated to be about 5 debye for 3.2-nm-radius quantum dots. The dipole moments are randomly oriented but 1% anisotropy is deduced from the electromodulated signal at f

  20. Effects of annealing on electrical and optical properties of a multilayer InAs/GaAs quantum dots system

    Directory of Open Access Journals (Sweden)

    Adenilson José Chiquito

    2004-09-01

    Full Text Available A systematic investigation of the properties of the InAs/GaAs self-assembled quantum dots (SAQDs system subjected to a post-growth annealing using capacitance-voltage, Raman scattering and photoluminescence measurements is presented. The application of both electrical and optical methods allowed us to obtain reliable information on the microscopic structural evolution of this system. The single layer and the multilayer quantum dots were found to respond differently to the annealing process, due to the differences in strain that occur in both systems. The diffusion activated by strain provoked the appearance of an InGaAs alloy layer in substitution to the quantum dots layers; this change occurred at the annealing temperature T = 600 ºC in the multilayer system. A single dot layer, however, was observed even after the annealing at T = 700 ºC. Moreover, the low temperature annealing was found to improve the homogeneity of the multilayer system and to decrease the electrical interlayer coupling.

  1. The effect of near laterally and vertically neighboring quantum dots on the composition of uncapped InxGa1−xAs/GaAs quantum dots

    International Nuclear Information System (INIS)

    Donglin, Wang; Zhongyuan, Yu; Yumin, Liu; Han, Ye; Pengfei, Lu; Xiaotao, Guo; Long, Zhao; Xia, Xin

    2010-01-01

    The composition of quantum dots has a direct effect on the optical and electronic properties of quantum-dot-based devices. In this paper, we combine the method of moving asymptotes and finite element tools to compute the composition distribution by minimizing the Gibbs free energy of quantum dots, and use this method to study the effect of near laterally and vertically neighboring quantum dots on the composition distribution. The simulation results indicate that the effect from the laterally neighboring quantum dot is very small, and the vertically neighboring quantum dot can significantly influence the composition by the coupled strain field

  2. The effect of Au amount on size uniformity of self-assembled Au nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Chen, S-H; Wang, D-C; Chen, G-Y; Chen, K-Y [Graduate School of Engineering Science and Technology, National Yunlin University of Science and Technology, Taiwan (China)

    2008-03-15

    The self-assembled fabrication of nanostructure, a dreaming approach in the area of fabrication engineering, is the ultimate goal of this research. A finding was proved through previous research that the size of the self-assembled gold nanoparticles could be controlled with the mole ratio between AuCl{sub 4}{sup -} and thiol. In this study, the moles of Au were fixed, only the moles of thiol were adjusted. Five different mole ratios of Au/S with their effect on size uniformity were investigated. The mole ratios were 1:1/16, 1:1/8, 1:1, 1:8, 1:16, respectively. The size distributions of the gold nanoparticles were analyzed by Mac-View analysis software. HR-TEM was used to derive images of self-assembled gold nanoparticles. The result reached was also the higher the mole ratio between AuCl{sub 4}{sup -} and thiol the bigger the self-assembled gold nanoparticles. Under the condition of moles of Au fixed, the most homogeneous nanoparticles in size distribution derived with the mole ratio of 1:1/8 between AuCl{sub 4}{sup -} and thiol. The obtained nanoparticles could be used, for example, in uniform surface nanofabrication, leading to the fabrication of ordered array of quantum dots.

  3. Quantum phase transition of light as a control of the entanglement between interacting quantum dots

    NARCIS (Netherlands)

    Barragan, Angela; Vera-Ciro, Carlos; Mondragon-Shem, Ian

    We study coupled quantum dots arranged in a photonic crystal, interacting with light which undergoes a quantum phase transition. At the mean-field level for the infinite lattice, we compute the concurrence of the quantum dots as a measure of their entanglement. We find that this quantity smoothly

  4. Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

    DEFF Research Database (Denmark)

    Albert, F.; Stobbe, Søren; Schneider, C.

    2010-01-01

    We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled InAs quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...

  5. Quantum efficiency and oscillator strength of site-controlled InGaAs quantum dots

    DEFF Research Database (Denmark)

    Albert, F.; Schneider, C.; Stobbe, Søren

    2010-01-01

    We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled In(Ga)As quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...

  6. Quantum dot nanoparticle conjugation, characterization, and applications in neuroscience

    Science.gov (United States)

    Pathak, Smita

    Quantum dot are semiconducting nanoparticles that have been used for decades in a variety of applications such as solar cells, LEDs and medical imaging. Their use in the last area, however, has been extremely limited despite their potential as revolutionary new biological labeling tools. Quantum dots are much brighter and more stable than conventional fluorophores, making them optimal for high resolution imaging and long term studies. Prior work in this area involves synthesizing and chemically conjugating quantum dots to molecules of interest in-house. However this method is both time consuming and prone to human error. Additionally, non-specific binding and nanoparticle aggregation currently prevent researchers from utilizing this system to its fullest capacity. Another critical issue that has not been addressed is determining the number of ligands bound to nanoparticles, which is crucial for proper interpretation of results. In this work, methods to label fixed cells using two types of chemically modified quantum dots are studied. Reproducible non-specific artifact labeling is consistently demonstrated if antibody-quantum dot conditions are less than optimal. In order to explain this, antibodies bound to quantum dots were characterized and quantified. While other groups have qualitatively characterized antibody functionalized quantum dots using TEM, AFM, UV spectroscopy and gel electrophoresis, and in some cases have reported calculated estimates of the putative number of total antibodies bound to quantum dots, no quantitative experimental results had been reported prior to this work. The chemical functionalization and characterization of quantum dot nanocrystals achieved in this work elucidates binding mechanisms of ligands to nanoparticles and allows researchers to not only translate our tools to studies in their own areas of interest but also derive quantitative results from these studies. This research brings ease of use and increased reliability to

  7. The transfer matrix approach to circular graphene quantum dots

    International Nuclear Information System (INIS)

    Nguyen, H Chau; Nguyen, Nhung T T; Nguyen, V Lien

    2016-01-01

    We adapt the transfer matrix (T -matrix) method originally designed for one-dimensional quantum mechanical problems to solve the circularly symmetric two-dimensional problem of graphene quantum dots. Similar to one-dimensional problems, we show that the generalized T -matrix contains rich information about the physical properties of these quantum dots. In particular, it is shown that the spectral equations for bound states as well as quasi-bound states of a circular graphene quantum dot and related quantities such as the local density of states and the scattering coefficients are all expressed exactly in terms of the T -matrix for the radial confinement potential. As an example, we use the developed formalism to analyse physical aspects of a graphene quantum dot induced by a trapezoidal radial potential. Among the obtained results, it is in particular suggested that the thermal fluctuations and electrostatic disorders may appear as an obstacle to controlling the valley polarization of Dirac electrons. (paper)

  8. Modeling of the Interminiband Absorption Coefficient in InGaN Quantum Dot Superlattices

    Directory of Open Access Journals (Sweden)

    Giovanni Giannoccaro

    2016-01-01

    Full Text Available In this paper, a model to estimate minibands and theinterminiband absorption coefficient for a wurtzite (WZ indium gallium nitride (InGaN self-assembled quantum dot superlattice (QDSL is developed. It considers a simplified cuboid shape for quantum dots (QDs. The semi-analytical investigation starts from evaluation through the three-dimensional (3D finite element method (FEM simulations of crystal mechanical deformation derived from heterostructure lattice mismatch under spontaneous and piezoelectric polarization effects. From these results, mean values in QDs and barrier regions of charge carriers’ electric potentials and effective masses for the conduction band (CB and three valence sub-bands for each direction are evaluated. For the minibands’ investigation, the single-particle time-independent Schrödinger equation in effective mass approximation is decoupled in three directions and resolved using the one-dimensional (1D Kronig–Penney model. The built-in electric field is also considered along the polar axis direction, obtaining Wannier–Stark ladders. Then, theinterminiband absorption coefficient in thermal equilibrium for transverse electric (TE and magnetic (TM incident light polarization is calculated using Fermi’s golden rule implementation based on a numerical integration into the first Brillouin zone. For more detailed results, an absorption coefficient component related to superlattice free excitons is also introduced. Finally, some simulation results, observations and comments are given.

  9. Kondo and mixed-valence regimes in multilevel quantum dots

    International Nuclear Information System (INIS)

    Chudnovskiy, A. L.; Ulloa, S. E.

    2001-01-01

    We investigate the dependence of the ground state of a multilevel quantum dot on the coupling to an external fermionic system and on the interactions in the dot. As the coupling to the external system increases, the rearrangement of the effective energy levels in the dot signals the transition from the Kondo regime to a mixed-valence (MV) regime. The MV regime in a two-level dot is characterized by an intrinsic mixing of the levels in the dot, resulting in nonperturbative subtunneling and supertunneling phenomena that strongly influence the Kondo effect

  10. Quantum bus of metal nanoring with surface plasmon polaritons

    International Nuclear Information System (INIS)

    Lin Zhirong; Guo Guoping; Tu Tao; Li Haiou; Zou Changling; Ren Xifeng; Guo Guangcan; Chen Junxue; Lu Yonghua

    2010-01-01

    We develop an architecture for distributed quantum computation using quantum bus of plasmonic circuits and spin qubits in self-assembled quantum dots. Deterministic quantum gates between two distant spin qubits can be reached by using an adiabatic approach in which quantum dots couple with highly detuned plasmon modes in a metallic nanoring. Plasmonic quantum bus offers a robust and scalable platform for quantum optics experiments and the development of on-chip quantum networks composed of various quantum nodes, such as quantum dots, molecules, and nanoparticles.

  11. Rabi oscillations a quantum dot exposed to quantum light

    International Nuclear Information System (INIS)

    Magyarov, A.; Slepyan, G.Ya.; Maksimenko, S.A.; Hoffmann, A.

    2007-01-01

    The influence of the local field on the excitonic Rabi oscillations in an isolated quantum dot driven by the coherent state of light has been theoretically investigated. Local field is predicted to entail the appearance of two oscillatory regimes in the Rabi effect separated by the bifurcation. In the first regime Rabi oscillations are periodic and do not reveal collapse-revivals phenomenon, while in the second one collapse and revivals appear, showing significant difference as compared to those predicted by the standard Jaynes-Cummings model

  12. Quantum dot doped solid polymer electrolyte for device application

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Pramod K.; Kim, Kang Wook; Rhee, Hee-Woo [Department of Chemical and Biomolecular Engineering, Sogang University, Mapo-Gu, Seoul 121-742 (Korea)

    2009-06-15

    ZnS capped CdSe quantum dots embedded in PEO:KI:I{sub 2} polymer electrolyte matrix have been synthesized and characterized for dye sensitized solar cell (DSSC) application. The complex impedance spectroscopy shows enhance in ionic conductivity ({sigma}) due to charges provide by quantum dots (QD) while AFM affirm the uniform distribution of QD into polymer electrolyte matrix. Cyclic voltammetry revealed the possible interaction between polymer electrolyte, QD and iodide/iodine. The photovoltaic performances of the DSSC containing quantum dots doped polymer electrolyte was also found to improve. (author)

  13. Strong-coupling polaron effect in quantum dots

    International Nuclear Information System (INIS)

    Zhu Kadi; Gu Shiwei

    1993-11-01

    Strong-coupling polaron in a parabolic quantum dot is investigated by the Landau-Pekar variational treatment. The polaron binding energy and the average number of virtual phonons around the electron as a function of the effective confinement length of the quantum dot are obtained in Gaussian function approximation. It is shown that both the polaron binding energy and the average number of virtual phonons around the electron decrease by increasing the effective confinement length. The results indicate that the polaronic effects are more pronounced in quantum dots than those in two-dimensional and three-dimensional cases. (author). 15 refs, 4 figs

  14. Quantum Dots Microstructured Optical Fiber for X-Ray Detection

    Science.gov (United States)

    DeHaven, Stan; Williams, Phillip; Burke, Eric

    2015-01-01

    Microstructured optical fibers containing quantum dots scintillation material comprised of zinc sulfide nanocrystals doped with magnesium sulfide are presented. These quantum dots are applied inside the microstructured optical fibers using capillary action. The x-ray photon counts of these fibers are compared to the output of a collimated CdTe solid state detector over an energy range from 10 to 40 keV. The results of the fiber light output and associated effects of an acrylate coating and the quantum dot application technique are discussed.

  15. Study of a Quantum Dot in an Excited State

    Science.gov (United States)

    Slamet, Marlina; Sahni, Viraht

    We have studied the first excited singlet state of a quantum dot via quantal density functional theory (QDFT). The quantum dot is represented by a 2D Hooke's atom in an external magnetostatic field. The QDFT mapping is from an excited singlet state of this interacting system to one of noninteracting fermions in a singlet ground state. The results of the study will be compared to (a) the corresponding mapping from a ground state of the quantum dot and (b) to the similar mapping from an excited singlet state of the 3D Hooke's atom.

  16. Imaging GABAc Receptors with Ligand-Conjugated Quantum Dots

    Directory of Open Access Journals (Sweden)

    Ian D. Tomlinson

    2007-01-01

    Full Text Available We report a methodology for labeling the GABAc receptor on the surface membrane of intact cells. This work builds upon our earlier work with serotonin-conjugated quantum dots and our studies with PEGylated quantum dots to reduce nonspecific binding. In the current approach, a PEGylated derivative of muscimol was synthesized and attached via an amide linkage to quantum dots coated in an amphiphilic polymer derivative of a modified polyacrylamide. These conjugates were used to image GABAC receptors heterologously expressed in Xenopus laevis oocytes.

  17. Nuclear Spin Nanomagnet in an Optically Excited Quantum Dot

    Science.gov (United States)

    Korenev, V. L.

    2007-12-01

    Linearly polarized light tuned slightly below the optical transition of the negatively charged exciton (trion) in a single quantum dot causes the spontaneous nuclear spin polarization (self-polarization) at a level close to 100%. The effective magnetic field of spin-polarized nuclei shifts the optical transition energy close to resonance with photon energy. The resonantly enhanced Overhauser effect sustains the stability of the nuclear self-polarization even in the absence of spin polarization of the quantum dot electron. As a result the optically selected single quantum dot represents a tiny magnet with the ferromagnetic ordering of nuclear spins—the nuclear spin nanomagnet.

  18. PREFACE: Quantum dots as probes in biology

    Science.gov (United States)

    Cieplak, Marek

    2013-05-01

    The recent availability of nanostructured materials has resulted in an explosion of research focused on their unique optical, thermal, mechanical and magnetic properties. Optical imagining, magnetic enhancement of contrast and drug delivery capabilities make the nanoparticles of special interest in biomedical applications. These materials have been involved in the development of theranostics—a new field of medicine that is focused on personalized tests and treatment. It is likely that multimodal nanomaterials will be responsible for future diagnostic advances in medicine. Quantum dots (QD) are nanoparticles which exhibit luminescence either through the formation of three-dimensional excitons or excitations of the impurities. The excitonic luminescence can be tuned by changing the size (the smaller the size, the higher the frequency). QDs are usually made of semiconducting materials. Unlike fluorescent proteins and organic dyes, QDs resist photobleaching, allow for multi-wavelength excitations and have narrow emission spectra. The techniques to make QDs are cheap and surface modifications and functionalizations can be implemented. Importantly, QDs could be synthesized to exhibit useful optomagnetic properties and, upon functionalization with an appropriate biomolecule, directed towards a pre-selected target for diagnostic imaging and photodynamic therapy. This special issue on Quantum dots in Biology is focused on recent research in this area. It starts with a topical review by Sreenivasan et al on various physical mechanisms that lead to the QD luminescence and on using wavelength shifts for an improvement in imaging. The next paper by Szczepaniak et al discusses nanohybrids involving QDs made of CdSe coated by ZnS and combined covalently with a photosynthetic enzyme. These nanohybrids are shown to maintain the enzymatic activity, however the enzyme properties depend on the size of a QD. They are proposed as tools to study photosynthesis in isolated

  19. Single Molecule Applications of Quantum Dots

    DEFF Research Database (Denmark)

    Rasmussen, Thomas Elmelund; Jauffred, Liselotte; Brewer, Jonathan R.

    2013-01-01

    Fluorescent nanocrystals composed of semiconductor materials were first introduced for biological applications in the late 1990s. The focus of this review is to give a brief survey of biological applications of quantum dots (QDs) at the single QD sensitivity level. These are described as follows: 1......) QD blinking and bleaching statistics, 2) the use of QDs in high speed single particle tracking with a special focus on how to design the biofunctional coatings of QDs which enable specific targeting to single proteins or lipids of interest, 3) a hybrid lipid-DNA analogue binding QDs which allows...... for tracking single lipids in lipid bilayers, 4) two-photon fluorescence correlation spectroscopy of QDs and 5) optical trapping and excitation of single QDs. In all of these applications, the focus is on the single particle sensitivity level of QDs. The high applicability of QDs in live cell imaging...

  20. Terahertz wave generation in coupled quantum dots

    International Nuclear Information System (INIS)

    Ma Yu-Rong; Guo Shi-Fang; Duan Su-Qing

    2012-01-01

    Based on coupled quantum dots, we present an interesting optical effect in a four-level loop coupled system. Both the two upper levels and the two lower levels are designed to be almost degenerate, which induces a considerable dipole moment. The terahertz wave is obtained from the low-frequency component of the photon emission spectrum. The frequency of the terahertz wave can be controlled by tuning the energy levels via designing the nanostructure appropriately or tuning the driving laser field. A terahertz wave with adjustable frequency and considerable intensity (100 times higher than that of the Rayleigh line) can be obtained. It provides an effective scheme for a terahertz source. (condensed matter: electronic structure, electrical, magnetic, and optical properties)