The Seebeck coefficient and the Peltier effect in a polymer electrolyte membrane cell with two hydrogen electrodes

International Nuclear Information System (INIS)

Kjelstrup, S.; Vie, P.J.S.; Akyalcin, L.; Zefaniya, P.; Pharoah, J.G.; Burheim, O.S.

2013-01-01

Highlights: • The heat change associated with the hydrogen electrode in a polymer electrolyte cell is determined from Seebeck coefficient measurements. • When electric current is passed from left to right in the outer circuit, the anode becomes warmer, while the cathode becomes colder in a thermoelectric cell with hydrogen electrodes. • At Soret equilibrium for water in the fuel cell, most of the entropy of the fuel cell reaction is generated at the anode. -- Abstract: We report that the Seebeck coefficient of a Nafion membrane cell with hydrogen electrodes saturated with water vapour, at 1 bar hydrogen pressure and 340 K, is equal to 670 ± 50 μV/K, meaning that the entropy change of the anode reaction at reversible conditions (67 J/(K mol)) corresponds to a reversible heat release of 22 kJ/mol. The transported entropy of protons across the membrane at Soret equilibrium was estimated from this value to 1 ± 5 J/(K mol). The results were supported by the expected variation in the Seebeck coefficient with the hydrogen pressure. We report also the temperature difference of the electrodes, when passing electric current through the cell, and find that the anode is heated (a Peltier heat effect), giving qualitative support to the result for the Seebeck coefficient. The Seebeck and Peltier effects are related by non-equilibrium thermodynamics theory, and the Peltier heat of the cathode in the fuel cell is calculated for steady state conditions to 6 ± 2 kJ/mol at 340 K. The division of the reversible heat release between the anode and the cathode, can be expected to vary with the current density, as the magnitude of the current density can have a big impact on water transport and water concentration profile

How to control spin-Seebeck current in a metal-quantum dot-magnetic insulator junction

Science.gov (United States)

Fu, Hua-Hua; Gu, Lei; Wu, Ruqian

The control of the spin-Seebeck current is still a challenging task for the development of spin caloritronic devices. Here, we construct a spin-Seebeck device by inserting a quantum dot (QD) between the metal lead and magnetic insulator. Using the slave-particle approach and noncrossing approximation, we find that the spin-Seebeck effect increases significantly when the energy level of the QD locates near the Fermi level of the metal lead due to the enhancement of spin flipping and occurrences of quantum resonance. Since this can be easily realized by applying a gate voltage in experiments, the spin-Seebeck device proposed here can also work as a thermovoltaic transistor. Moreover, the optimal correlation strength and the energy level position of the QD are discussed to maximize the spin-Seebeck current as required for applications in controllable spin caloritronic devices.

Seebeck coefficient of synthesized Titanium Dioxide thin film on FTO glass substrate

Science.gov (United States)

Usop, R.; Hamed, N. K. A.; Megat Hasnan, M. M. I.; Ikeda, H.; Sabri, M. F. M.; Ahmad, M. K.; Said, S. M.; Salleh, F.

2018-04-01

In order to fabricate a thermoelectric device on glass substrate for harvesting waste heat energy through house appliances, the Seebeck coefficient of translucent TiO2 thin film was investigated. The TiO2 thin film was synthesized by using hydrothermal method with F-SnO2 coated glass as substrate. From scanning electron microscopy analysis, the synthesized TiO2 thin film was found to be in nanometer-scale rod structure with a thickness of 4 µm. The Seebeck coefficient was measured in the temperature range of 300 – 400 K. The Seebeck coefficient is found to be in negative value which shows that synthesized film is an n-type semiconductor material, and is lower than the value of bulk-size material. This reduction in Seebeck coefficient of TiO2 thin film is likely due to the low dimensional effect and the difference of carrier concentration.

Numerical conversion efficiency of thermally isolated Seebeck nanoantennas

Directory of Open Access Journals (Sweden)

Edgar Briones

2016-11-01

Full Text Available In this letter, we evaluate the conversion efficiency of thermally isolated Seebeck nanoantennas by numerical simulations and discuss their uses and scope for energy harvesting applications. This analysis includes the simple case of titanium-nickel dipoles suspended in air above the substrate by a 200 nm silicon dioxide membrane to isolate the heat dissipation. Results show that substantially thermal gradients are induced along the devices leading to a harvesting efficiency around 10-4 %, 400 % higher than the previously reported Seebeck nanoantennas. In the light of these results, different optimizing strategies should be considered in order to make the Seebeck nanoantennas useful for harvesting applications.

Criteria for accurate determination of the magnon relaxation length from the nonlocal spin Seebeck effect

NARCIS (Netherlands)

Shan, Juan; Cornelissen, Ludo Johannes; Liu, Jing; Ben Youssef, J.; Liang, Lei; van Wees, Bart

2017-01-01

The nonlocal transport of thermally generated magnons not only unveils the underlying mechanism of the spin Seebeck effect, but also allows for the extraction of the magnon relaxation length (λm) in a magnetic material, the average distance over which thermal magnons can propagate. In this study, we

Bulk magnon spin current theory for the longitudinal spin Seebeck effect

Energy Technology Data Exchange (ETDEWEB)

Rezende, S.M., E-mail: rezende@df.ufpe.br [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, Pernambuco (Brazil); Rodríguez-Suárez, R.L. [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, Pernambuco (Brazil); Facultad de Física, Pontificia Universidad Católica de Chile, Casilla, 306 Santiago (Chile); Cunha, R.O.; López Ortiz, J.C.; Azevedo, A. [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, Pernambuco (Brazil)

2016-02-15

The longitudinal spin Seebeck effect (LSSE) consists in the generation of a spin current parallel to a temperature gradient applied across the thickness of a bilayer made of a ferromagnetic insulator (FMI), such as yttrium iron garnet (YIG), and a metallic layer (ML) with strong spin orbit coupling, such as platinum. The LSSE is usually detected by a DC voltage generated along the ML due to the conversion of the spin current into a charge current perpendicular to the static magnetic field by means of the inverse spin Hall effect. Here we present a model for the LSSE that relies on the bulk magnon spin current created by the temperature gradient across the thickness of the FMI. We show that the spin current pumped into the metallic layer by the magnon accumulation in the FMI provides continuity of the spin current at the FMI/ML interface and is essential for the existence of the LSSE. The results of the theory are in good agreement with experimental LSSE data in YIG/Pt bilayers on the variation of the DC voltage with the sample temperature, with the FMI layer thickness and with the intensity of high magnetic fields. - Highlights: • We present a theory for the longitudinal spin Seebeck effect based on bulk magnons. • The model explains quantitatively the measured voltage in YIG/Pt created by the LSSE. • The model explains quantitatively the temperature dependence of LSSE measured in YIG/Pt. • The model agrees qualitatively with the measured dependence of LSSE with YIG thickness. • The model agrees qualitatively with the measured dependence of LSSE on magnetic field.

Unambiguous separation of the inverse spin Hall and anomalous Nernst effects within a ferromagnetic metal using the spin Seebeck effect

International Nuclear Information System (INIS)

Wu, Stephen M.; Hoffman, Jason; Pearson, John E.; Bhattacharya, Anand

2014-01-01

The longitudinal spin Seebeck effect is measured on the ferromagnetic insulator Fe 3 O 4 with the ferromagnetic metal Co 0.2 Fe 0.6 B 0.2 (CoFeB) as the spin detector. By using a non-magnetic spacer material between the two materials (Ti), it is possible to decouple the two ferromagnetic materials and directly observe pure spin flow from Fe 3 O 4 into CoFeB. It is shown that in a single ferromagnetic metal, the inverse spin Hall effect (ISHE) and anomalous Nernst effect (ANE) can occur simultaneously with opposite polarity. Using this and the large difference in the coercive fields between the two magnets, it is possible to unambiguously separate the contributions of the spin Seebeck effect from the ANE and observe the degree to which each effect contributes to the total response. These experiments show conclusively that the ISHE and ANE in CoFeB are separate phenomena with different origins and can coexist in the same material with opposite response to a thermal gradient.

Edge-defect induced spin-dependent Seebeck effect and spin figure of merit in graphene nanoribbons.

Science.gov (United States)

Liu, Qing-Bo; Wu, Dan-Dan; Fu, Hua-Hua

2017-10-11

By using the first-principle calculations combined with the non-equilibrium Green's function approach, we have studied spin caloritronic properties of graphene nanoribbons (GNRs) with different edge defects. The theoretical results show that the edge-defected GNRs with sawtooth shapes can exhibit spin-dependent currents with opposite flowing directions by applying temperature gradients, indicating the occurrence of the spin-dependent Seebeck effect (SDSE). The edge defects bring about two opposite effects on the thermal spin currents: the enhancement of the symmetry of thermal spin-dependent currents, which contributes to the realization of pure thermal spin currents, and the decreasing of the spin thermoelectric conversion efficiency of the devices. It is fortunate that applying a gate voltage is an efficient route to optimize these two opposite spin thermoelectric properties towards realistic device applications. Moreover, due to the existence of spin-splitting band gaps, the edge-defected GNRs can be designed as spin-dependent Seebeck diodes and rectifiers, indicating that the edge-defected GNRs are potential candidates for room-temperature spin caloritronic devices.

Seebeck effect in (U,Pu)Osub(2+-y) and its influence on oxygen migration

International Nuclear Information System (INIS)

Annucci, F. d'; Sari, C.; Schumacher, G.; Kernforschungszentrum Karlsruhe G.m.b.H.

1979-01-01

Thermoelectric potentials have been investigated in hypo- and hyperstoichiometric uranium-plutonium mixed oxide pellets up to temperatures of 1800 K. At low temperatures, below 1200 K the Seebeck coefficient is positive. It vanishes at temperatures between 1200 K and 1800 K and changes its sign with increasing temperatures. This behavior is explained by a change of the conductivity mechanism from p- to n-type. The absolute value of the Seebeck coefficient depends strongly on the O/M-ratio. It is big for the stoichiometric region and small for higher deviations from stoichiometry. Thermoelectric power provides one of the forces which drive ions along the temperature gradients. Another force originates in the differences of the lattice forces of the various ions, atoms, and vacancies. Both forces can be described by the heat of transport of oxygen ions which contains a thermoelectric and a thermic part. The parts are calculated using the known values of the overall heat of transport and that of the measured Seebeck coefficient. (orig./HP) [de

Spin Seebeck effect in nanometer-thick YIG micro-fabricated strips

Directory of Open Access Journals (Sweden)

Martin Collet

2017-05-01

Full Text Available We have investigated the spin Seebeck effect (SSE generated by current induced-heating in ultra-thin yttrium iron garnet film (20 nm covered by an 8 nm thick Pt layer. By passing current in the Pt layer, an out-of-plane temperature gradient is established that, in turn, generates an out-of-equilibrium magnons population. The resulting pure spin current is detected using the inverse spin Hall effect (ISHE measured in the Pt electrode. A lock-in detection scheme is used to separate the SSE signal from other magneto-galvanic effect. Indeed, the SSE signal is obtained as the second harmonic voltage response, while spin Hall magnetoresistance (SMR is measured as the first harmonic response to the ac excitation current. Interestingly, the amplitude of the SSE in such thin YIG film is comparable to what has been reported for much thicker films.

Microscopic origin of subthermal magnons and the spin Seebeck effect

International Nuclear Information System (INIS)

Diniz, I; Costa, A T

2016-01-01

Recent experimental evidence points to low-energy magnons as the primary contributors to the spin Seebeck effect. This spectral dependence is puzzling since it is not observed on other thermocurrents in the same material. Here, we argue that the physical origin of this behavior is the magnon–magnon scattering mediated by phonons, in a process which conserves the number of magnons. To assess the importance and features of this kind of scattering, we derive the effective magnon–phonon interaction from a microscopic model, including band energy, a screened electron–electron interaction and the electron–phonon interaction. Unlike higher order magnon-only scattering, we find that the coupling with phonons induce a scattering which is very small for low-energy (or subthermal ) magnons but increases sharply above a certain energy—rendering magnons above this energy poor spin-current transporters. (fast track communication)

System to Measure Thermal Conductivity and Seebeck Coefficient for Thermoelectrics

Science.gov (United States)

Kim, Hyun-Jung; Skuza, Jonathan R.; Park, Yeonjoon; King, Glen C.; Choi, Sang H.; Nagavalli, Anita

2012-01-01

The Seebeck coefficient, when combined with thermal and electrical conductivity, is an essential property measurement for evaluating the potential performance of novel thermoelectric materials. However, there is some question as to which measurement technique(s) provides the most accurate determination of the Seebeck coefficient at elevated temperatures. This has led to the implementation of nonstandardized practices that have further complicated the confirmation of reported high ZT materials. The major objective of the procedure described is for the simultaneous measurement of the Seebeck coefficient and thermal diffusivity within a given temperature range. These thermoelectric measurements must be precise, accurate, and reproducible to ensure meaningful interlaboratory comparison of data. The custom-built thermal characterization system described in this NASA-TM is specifically designed to measure the inplane thermal diffusivity, and the Seebeck coefficient for materials in the ranging from 73 K through 373 K.

Spin Current Noise of the Spin Seebeck Effect and Spin Pumping

Science.gov (United States)

Matsuo, M.; Ohnuma, Y.; Kato, T.; Maekawa, S.

2018-01-01

We theoretically investigate the fluctuation of a pure spin current induced by the spin Seebeck effect and spin pumping in a normal-metal-(NM-)ferromagnet(FM) bilayer system. Starting with a simple ferromagnet-insulator-(FI-)NM interface model with both spin-conserving and non-spin-conserving processes, we derive general expressions of the spin current and the spin-current noise at the interface within second-order perturbation of the FI-NM coupling strength, and estimate them for a yttrium-iron-garnet-platinum interface. We show that the spin-current noise can be used to determine the effective spin carried by a magnon modified by the non-spin-conserving process at the interface. In addition, we show that it provides information on the effective spin of a magnon, heating at the interface under spin pumping, and spin Hall angle of the NM.

Accurate on-chip measurement of the Seebeck coefficient of high mobility small molecule organic semiconductors

Science.gov (United States)

Warwick, C. N.; Venkateshvaran, D.; Sirringhaus, H.

2015-09-01

We present measurements of the Seebeck coefficient in two high mobility organic small molecules, 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) and 2,9-didecyl-dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C10-DNTT). The measurements are performed in a field effect transistor structure with high field effect mobilities of approximately 3 cm2/V s. This allows us to observe both the charge concentration and temperature dependence of the Seebeck coefficient. We find a strong logarithmic dependence upon charge concentration and a temperature dependence within the measurement uncertainty. Despite performing the measurements on highly polycrystalline evaporated films, we see an agreement in the Seebeck coefficient with modelled values from Shi et al. [Chem. Mater. 26, 2669 (2014)] at high charge concentrations. We attribute deviations from the model at lower charge concentrations to charge trapping.

Quantitative Temperature Dependence of Longitudinal Spin Seebeck Effect at High Temperatures

Directory of Open Access Journals (Sweden)

Ken-ichi Uchida

2014-11-01

Full Text Available We report temperature-dependent measurements of longitudinal spin Seebeck effects (LSSEs in Pt/Y_{3}Fe_{5}O_{12} (YIG/Pt systems in a high temperature range from room temperature to above the Curie temperature of YIG. The experimental results show that the magnitude of the LSSE voltage in the Pt/YIG/Pt systems rapidly decreases with increasing the temperature and disappears above the Curie temperature. The critical exponent of the LSSE voltage in the Pt/YIG/Pt systems at the Curie temperature is estimated to be 3, which is much greater than that for the magnetization curve of YIG. This difference highlights the fact that the mechanism of the LSSE cannot be explained in terms of simple static magnetic properties in YIG.

Accurate on-chip measurement of the Seebeck coefficient of high mobility small molecule organic semiconductors

Directory of Open Access Journals (Sweden)

C. N. Warwick

2015-09-01

Full Text Available We present measurements of the Seebeck coefficient in two high mobility organic small molecules, 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT and 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C10-DNTT. The measurements are performed in a field effect transistor structure with high field effect mobilities of approximately 3 cm2/V s. This allows us to observe both the charge concentration and temperature dependence of the Seebeck coefficient. We find a strong logarithmic dependence upon charge concentration and a temperature dependence within the measurement uncertainty. Despite performing the measurements on highly polycrystalline evaporated films, we see an agreement in the Seebeck coefficient with modelled values from Shi et al. [Chem. Mater. 26, 2669 (2014] at high charge concentrations. We attribute deviations from the model at lower charge concentrations to charge trapping.

Description of a Sensitive Seebeck Calorimeter Used for Cold Fusion Studies

Science.gov (United States)

Storms, Edmund

A sensitive and stable Seebeck calorimeter is described and used to determine the heat of formation of PdD. This determination can be used to show that such calorimeters are sufficiently accurate to measure the LENR effect and give support to the claims.

Description of a sensitive seebeck calorimeter used for cold fusion studies

International Nuclear Information System (INIS)

Storms, Edmund

2006-01-01

A sensitive and stable Seebeck calorimeter is described and used to determine the heat of formation of PdD. This determination can be used to show that such calorimeters are sufficiently accurate to measure the LENR effect and give support to the claims. (author)

Seebeck effect on a weak link between Fermi and non-Fermi liquids

Science.gov (United States)

Nguyen, T. K. T.; Kiselev, M. N.

2018-02-01

We propose a model describing Seebeck effect on a weak link between two quantum systems with fine-tunable ground states of Fermi and non-Fermi liquid origin. The experimental realization of the model can be achieved by utilizing the quantum devices operating in the integer quantum Hall regime [Z. Iftikhar et al., Nature (London) 526, 233 (2015), 10.1038/nature15384] designed for detection of macroscopic quantum charged states in multichannel Kondo systems. We present a theory of thermoelectric transport through hybrid quantum devices constructed from quantum-dot-quantum-point-contact building blocks. We discuss pronounced effects in the temperature and gate voltage dependence of thermoelectric power associated with a competition between Fermi and non-Fermi liquid behaviors. High controllability of the device allows to fine tune the system to different regimes described by multichannel and multi-impurity Kondo models.

Characterization of thermoelectric devices by laser induced Seebeck electromotive force (LIS-EMF) measurement

Energy Technology Data Exchange (ETDEWEB)

Lopez, Luis-David Patino [Universite de Bordeaux 1, Centre de Physique Moleculaire Optique et Hertzienne, 351, cours de la liberation, 33405 Talence (France); Dilhaire, Stefan [Universite de Bordeaux 1, Centre de Physique Moleculaire Optique et Hertzienne, 351, cours de la liberation, 33405 Talence (France); Grauby, Stephane [Universite de Bordeaux 1, Centre de Physique Moleculaire Optique et Hertzienne, 351, cours de la liberation, 33405 Talence (France); Salhi, M Amine [Universite de Bordeaux 1, Centre de Physique Moleculaire Optique et Hertzienne, 351, cours de la liberation, 33405 Talence (France); Ezzahri, Younes [Universite de Bordeaux 1, Centre de Physique Moleculaire Optique et Hertzienne, 351, cours de la liberation, 33405 Talence (France); Claeys, Wilfrid [Universite de Bordeaux 1, Centre de Physique Moleculaire Optique et Hertzienne, 351, cours de la liberation, 33405 Talence (France); Batsale, Jean-Christophe [Laboratoire TREFLE, Esplanade des Arts et Metiers, 33405 Talence Cedex (France)

2005-05-21

An in-depth study related to a new method of characterizing properties in thermoelectrics is proposed in this paper. This technique is appropriate for single or multi-layered thermoelectric devices. A modulated laser beam is used as a heater in order to generate a Seebeck electromotive force (EMF). The laser beam, line shaped, can be focused at any location along the sample surface, allowing spatially resolved measurements. Seebeck EMF measurements, associated with a versatile model based on the thermal quadrupoles method, allow determination of the sample Seebeck EMF profile and identifying of the sample thermal contact resistances, and should be useful for identification of devices and material thermoelectric properties.

Characterization of thermoelectric devices by laser induced Seebeck electromotive force (LIS-EMF) measurement

International Nuclear Information System (INIS)

Lopez, Luis-David Patino; Dilhaire, Stefan; Grauby, Stephane; Salhi, M Amine; Ezzahri, Younes; Claeys, Wilfrid; Batsale, Jean-Christophe

2005-01-01

An in-depth study related to a new method of characterizing properties in thermoelectrics is proposed in this paper. This technique is appropriate for single or multi-layered thermoelectric devices. A modulated laser beam is used as a heater in order to generate a Seebeck electromotive force (EMF). The laser beam, line shaped, can be focused at any location along the sample surface, allowing spatially resolved measurements. Seebeck EMF measurements, associated with a versatile model based on the thermal quadrupoles method, allow determination of the sample Seebeck EMF profile and identifying of the sample thermal contact resistances, and should be useful for identification of devices and material thermoelectric properties

Nernst effect, Seebeck effect, and vortex dynamics in the mixed state of superconductors

International Nuclear Information System (INIS)

Ao, P.

1997-01-01

The author demonstrates that in the presence of pinning a simple relation exists between Nernst and Seebeck coefficients and the resistivity tensor, based on the vortex equation of motion and the two-fluid model. Thus the combination of the electric and thermoelectric transport experiments can be used to test the basic models for the vortex dynamics in superconductors. Then the author shows how two different vortex dynamics models can be subjected to these tests. The vortex dynamics model without various normal fluid drag forces is consistent with those experiments, and that the alternative model with those drag forces is not

An experimental approach of decoupling Seebeck coefficient and electrical resistivity

Science.gov (United States)

Muhammed Sabeer N., A.; Paulson, Anju; Pradyumnan, P. P.

2018-04-01

The Thermoelectrics (TE) has drawn increased attention among renewable energy technologies. The performance of a thermoelectric material is quantified by a dimensionless thermoelectric figure of merit, ZT=S2σT/κ, where S and σ vary inversely each other. Thus, improvement in ZT is not an easy task. So, researchers have been trying different parameter variations during thin film processing to improve TE properties. In this work, tin nitride (Sn3N4) thin films were deposited on glass substrates by reactive RF magnetron sputtering and investigated its thermoelectric response. To decouple the covariance nature of Seebeck coefficient and electrical resistivity for the enhancement of power factor (S2σ), the nitrogen gas pressure during sputtering was reduced. Reduction in nitrogen gas pressure reduced both sputtering pressure and amount of nitrogen available for reaction during sputtering. This experimental approach of combined effect introduced preferred orientation and stoichiometric variations simultaneously in the sputtered Sn3N4 thin films. The scattering mechanism associated with these variations enhanced TE properties by independently drive the Seebeck coefficient and electrical resistivity parameters.

Spin Seebeck effect in insulating epitaxial γ−Fe2O3 thin films

Directory of Open Access Journals (Sweden)

P. Jiménez-Cavero

2017-02-01

Full Text Available We report the fabrication of high crystal quality epitaxial thin films of maghemite (γ−Fe2O3, a classic ferrimagnetic insulating iron oxide. Spin Seebeck effect (SSE measurements in γ−Fe2O3/Pt bilayers as a function of sample preparation conditions and temperature yield a SSE coefficient of 0.5(1 μV/K at room temperature. Dependence on temperature allows us to estimate the magnon diffusion length in maghemite to be in the range of tens of nanometers, in good agreement with that of conducting iron oxide magnetite (Fe3O4, establishing the relevance of spin currents of magnonic origin in magnetic iron oxides.

Nanoscale Thermoelectrics: A Study of the Absolute Seebeck Coefficient of Thin Films

Science.gov (United States)

Mason, Sarah J.

measure, S, as a function of temperature using a micro-machined thermal isolation platform consisting of a suspended, patterned SiN membrane. By measuring a series of thicknesses of metallic films up to the infinitely thin film limit, in which the electrical resistivity is no longer decreasing with increasing film thickness, but still not at bulk values, along with the effective electron mean free path, we are able to show the contribution of the leads needed to measure this property. Having a comprehensive understanding of the background contribution we are able to determine the absolute Seebeck coefficient of a wide variety of thin films. The nature of the design of the SiN membrane also allows the ability to accurately and directly measure thermal and electrical transport of the thin films yielding a comprehensive measurement of the three quantities that characterize a material's efficiency. This can serve to further the development of thermoelectric materials through precise measurements of the material properties that dictate efficiency.

High spin-filter efficiency and Seebeck effect through spin-crossover iron–benzene complex

Energy Technology Data Exchange (ETDEWEB)

Yan, Qiang; Zhou, Liping, E-mail: zhoulp@suda.edu.cn; Cheng, Jue-Fei; Wen, Zhongqian; Han, Qin; Wang, Xue-Feng [College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China)

2016-04-21

Electronic structures and coherent quantum transport properties are explored for spin-crossover molecule iron-benzene Fe(Bz){sub 2} using density functional theory combined with non-equilibrium Green’s function. High- and low-spin states are investigated for two different lead-molecule junctions. It is found that the asymmetrical T-shaped contact junction in the high-spin state behaves as an efficient spin filter while it has a smaller conductivity than that in the low-spin state. Large spin Seebeck effect is also observed in asymmetrical T-shaped junction. Spin-polarized properties are absent in the symmetrical H-shaped junction. These findings strongly suggest that both the electronic and contact configurations play significant roles in molecular devices and metal-benzene complexes are promising materials for spintronics and thermo-spintronics.

Influence of defects and disorder on anomalous Hall effect and spin Seebeck effect on permalloy and Heusler compounds

Energy Technology Data Exchange (ETDEWEB)

Vilanova Vidal, Enrique

2012-09-19

In this work Heusler thin films have been prepared and their transport properties have been studied. Of particularly interest is the anomalous Hall effect (AHE). The effect is a long known but still not fully understood transport effect. Most theory papers focus on the influence of one particular contribution to the AHE. Actual measured experimental data, however, often are not in accordance with idealized assumptions. This thesis discusses the data analysis for materials with low residual resistivity ratios. As prototypical materials, half metallic Heusler compounds are studied. Here, the influence of defects and disorder is apparent in a material with a complex topology of the Fermi surface. Using films with different degrees of disorder, the different scattering mechanisms can be separated. For Co{sub 2}FeSi{sub 0.6}Al{sub 0.4} and Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5}, the AHE induced by B2-type disorder and temperature-dependent scattering is positive, while DO{sub 3}-type disorder and possible intrinsic contributions possess a negative sign. For these compounds, magneto-optical Kerr effects (MOKE) are investigated. First order contributions as a function of intrinsic and extrinsic parameters are qualitatively analyzed. The relation between the crystalline ordering and the second order contributions to the MOKE signal is studied. In addition, sets of the Heusler compound Co{sub 2}MnAl thin films were grown on MgO(100) and Si(100) substrates by radio frequency magnetron sputtering. Composition, magnetic and transport properties were studied systematically for samples deposited at different conditions. In particular, the anomalous Hall effect resistivity presents an extraordinarily temperature independent behavior in a moderate magnetic field range from 0 to 0.6 T. The off-diagonal transport at temperatures up to 300 C was analyzed. The data show the suitability of the material for Hall sensors working well above room temperature. Recently, the spin Seebeck effect

Giant magneto-spin-Seebeck effect and magnon transfer torques in insulating spin valves

Science.gov (United States)

Cheng, Yihong; Chen, Kai; Zhang, Shufeng

2018-01-01

We theoretically study magnon transport in an insulating spin valve (ISV) made of an antiferromagnetic insulator sandwiched between two ferromagnetic insulator (FI) layers. In the conventional metal-based spin valve, the electron spins propagate between two metallic ferromagnetic layers, giving rise to giant magnetoresistance and spin transfer torque. Here, the incoherent magnons in the ISV serve as angular momentum carriers and are responsible for the angular momentum transport between two FI layers across the antiferromagnetic spacer. We predict two transport phenomena in the presence of the temperature gradient: a giant magneto-spin-Seebeck effect in which the output voltage signal is controlled by the relative orientation of the two FI layers and magnon transfer torque that can be used for switching the magnetization of the FI layers with a temperature gradient of the order of 0.1 Kelvin per nanometer.

Anomalous temperature dependence of the Seebeck coefficient for the substitutionally-disordered hopping conductors

International Nuclear Information System (INIS)

Raffaelle, R.P.; Parris, P.E.; Anderson, H.U.; Sparlin, D.M.

1991-01-01

Thermoelectric power measurements are presented for the (La,Sr)(Cr,Mn)O 3 series. The nonlinear temperature dependence of the Seebeck coefficient is analyzed in terms of a random distribution of energetically equivalent hopping sites. The limitations of Heikes' formula, which has been traditionally used to calculate small polaron carrier densities in these systems, are discussed. Recent theoretical developments in the interpretation of Seebeck measurements in substitutionally-disordered high-temperature hopping conductors are reviewed

Enhanced room-temperature spin Seebeck effect in a YIG/C60/Pt layered heterostructure

Science.gov (United States)

Das, R.; Kalappattil, V.; Geng, R.; Luong, H.; Pham, M.; Nguyen, T.; Liu, Tao; Wu, Mingzhong; Phan, M. H.; Srikanth, H.

2018-05-01

We report on large enhancement of the longitudinal spin Seebeck effect (LSSE) in the Y3Fe5O12 (YIG)/Pt system at room temperature due to the addition of a thin layer of organic semiconductor (C60) in between the YIG and the Pt. LSSE measurements show that the LSSE voltage increases significantly, from the initial value of 150 nV for the YIG/Pt structure to 240 nV for the YIG/C60(5nm)/Pt structure. Radio-frequency transverse susceptibility experiments reveal a significant decrease in the surface perpendicular magnetic anisotropy (PMA) of the YIG film when C60 is deposited on it. These results suggest that the LSSE enhancement may be attributed to increased spin mixing conductance, the decreased PMA, and the large spin diffusion length of C60.

Spin-dependent Seebeck coefficients of Ni80Fe20 and Co in nanopillar spin valves

NARCIS (Netherlands)

Dejene, F. K.; Flipse, J.; van Wees, B. J.

2012-01-01

We have experimentally determined the spin-dependent Seebeck coefficient of permalloy (Ni80Fe20) and cobalt (Co) using nanopillar spin valve devices, a stack of two ferromagnetic layers separated by a nonmagnetic layer. The devices were specifically designed to separate heat-related effects from

Lock-in thermography measurements of the spin Peltier effect in a compensated ferrimagnet and its comparison to the spin Seebeck effect

Science.gov (United States)

Yagmur, A.; Iguchi, R.; Geprägs, S.; Erb, A.; Daimon, S.; Saitoh, E.; Gross, R.; Uchida, K.

2018-05-01

The spin Peltier effect (SPE) in a junction comprising a gadolinium-iron-garnet (GdIG) slab and a Pt film has been investigated around the magnetization compensation temperature of GdIG by means of the lock-in thermography method. When a charge current is applied to the Pt layer, a spin current is generated across the Pt/GdIG interface via the spin Hall effect in Pt. This spin current induces a heat current and a measurable temperature change near the Pt/GdIG interface due to the SPE. The SPE signal in the Pt/GdIG junction shows a sign change around the magnetization compensation temperature, demonstrating the similar temperature dependence of the SPE and the spin Seebeck effect for the Pt/GdIG hybrid system.

Temperature dependence of the spin Seebeck effect in [Fe3O4/Pt]n multilayers

Directory of Open Access Journals (Sweden)

R. Ramos

2017-05-01

Full Text Available We report temperature dependent measurements of the spin Seebeck effect (SSE in multilayers formed by repeated growth of a Fe3O4/Pt bilayer junction. The magnitude of the observed enhancement of the SSE, relative to the SSE in the single bilayer, shows a monotonic increase with decreasing the temperature. This result can be understood by an increase of the characteristic length for spin current transport in the system, in qualitative agreement with the recently observed increase in the magnon diffusion length in Fe3O4 at lower temperatures. Our result suggests that the thermoelectric performance of the SSE in multilayer structures can be further improved by careful choice of materials with suitable spin transport properties.

Prediction of seebeck coefficient for compounds without restriction to fixed stoichiometry: A machine learning approach.

Science.gov (United States)

Furmanchuk, Al'ona; Saal, James E; Doak, Jeff W; Olson, Gregory B; Choudhary, Alok; Agrawal, Ankit

2018-02-05

The regression model-based tool is developed for predicting the Seebeck coefficient of crystalline materials in the temperature range from 300 K to 1000 K. The tool accounts for the single crystal versus polycrystalline nature of the compound, the production method, and properties of the constituent elements in the chemical formula. We introduce new descriptive features of crystalline materials relevant for the prediction the Seebeck coefficient. To address off-stoichiometry in materials, the predictive tool is trained on a mix of stoichiometric and nonstoichiometric materials. The tool is implemented into a web application (http://info.eecs.northwestern.edu/SeebeckCoefficientPredictor) to assist field scientists in the discovery of novel thermoelectric materials. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Magnon diffusion theory for the spin Seebeck effect in ferromagnetic and antiferromagnetic insulators

Science.gov (United States)

Rezende, Sergio M.; Azevedo, Antonio; Rodríguez-Suárez, Roberto L.

2018-05-01

In magnetic insulators, spin currents are carried by the elementary excitations of the magnetization: spin waves or magnons. In simple ferromagnetic insulators there is only one magnon mode, while in two-sublattice antiferromagnetic insulators (AFIs) there are two modes, which carry spin currents in opposite directions. Here we present a theory for the diffusive magnonic spin current generated in a magnetic insulator layer by a thermal gradient in the spin Seebeck effect. We show that the formulations describing magnonic perturbation using a position-dependent chemical potential and those using a magnon accumulation are completely equivalent. Then we develop a drift–diffusion formulation for magnonic spin transport treating the magnon accumulation governed by the Boltzmann transport and diffusion equations and considering the full boundary conditions at the surfaces and interfaces of an AFI/normal metal bilayer. The theory is applied to the ferrimagnetic yttrium iron garnet and to the AFIs MnF2 and NiO, providing good quantitative agreement with experimental data.

Temperature Dependence of the Seebeck Coefficient in Zinc Oxide Thin Films

Science.gov (United States)

Noori, Amirreza; Masoumi, Saeed; Hashemi, Najmeh

2017-12-01

Thermoelectric devices are reliable tools for converting waste heat into electricity as they last long, produce no noise or vibration, have no moving elements, and their light weight makes them suitable for the outer space usage. Materials with high thermoelectric figure of merit (zT) have the most important role in the fabrication of efficient thermoelectric devices. Metal oxide semiconductors, specially zinc oxide has recently received attention as a material suitable for sensor, optoelectronic and thermoelectric device applications because of their wide direct bandgap, chemical stability, high-energy radiation endurance, transparency and acceptable zT. Understanding the thermoelectric properties of the undoped ZnO thin films can help design better ZnO-based devices. Here, we report the results of our experimental work on the thermoelectric properties of the undoped polycrystalline ZnO thin films. These films are deposited on alumina substrates by thermal evaporation of zinc in vacuum followed by a controlled oxidation process in air carried out at the 350-500 °C temperature range. The experimental setup including gradient heaters, thermometry system and Seebeck voltage measurement equipment for high resistance samples is described. Seebeck voltage and electrical resistivity of the samples are measured at different conditions. The observed temperature dependence of the Seebeck coefficient is discussed.

Generation of pure spin currents via spin Seebeck effect in self-biased hexagonal ferrite thin films

Energy Technology Data Exchange (ETDEWEB)

Li, Peng; Ellsworth, David; Chang, Houchen; Janantha, Praveen; Richardson, Daniel; Phillips, Preston; Vijayasarathy, Tarah; Wu, Mingzhong, E-mail: mwu@lamar.colostate.edu [Department of Physics, Colorado State University, Fort Collins, Colorado 80523 (United States); Shah, Faisal [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

2014-12-15

Light-induced generation of pure spin currents in a Pt(2.5 nm)/BaFe{sub 12}O{sub 19}(1.2 μm)/sapphire(0.5 mm) structure is reported. The BaFe{sub 12}O{sub 19} film had strong in-plane uniaxial anisotropy and was therefore self-biased. Upon exposure to light, a temperature difference (ΔT) was established across the BaFe{sub 12}O{sub 19} thickness that gave rise to a pure spin current in the Pt via the spin Seebeck effect. Via the inverse spin Hall effect, the spin current produced an electric voltage across one of the Pt lateral dimensions. The voltage varied with time in the same manner as ΔT and flipped its sign when the magnetization in BaFe{sub 12}O{sub 19} was reversed.

Long-range transverse spin Seebeck effect in permalloy stripes using Sagnac interferometer microscopy

Science.gov (United States)

Liu, Haoliang; McLaughlin, Ryan; Sun, Dali; Valy Vardeny, Z.

2018-04-01

Coupling of spins and phonons in ferromagnets (FM) may persist up to mm length scale, thus generating macroscopic spatially distributed spin accumulation along the direction of an applied thermal gradient to an FM slab. This typical feature of transverse spin Seebeck effect (TSSE) has been demonstrated so far using electrical detection methods in FM films, in particular in a patterned structure, in which FM stripes grown onto a substrate perpendicular to the applied thermal gradient direction are electrically and magnetically isolated. Here we report optically detected TSSE response in isolated FM stripes based on permalloy deposited on SiN substrate, upon the application of a thermal gradient. For these measurements we used the magneto-optic Kerr effect measured by an ultrasensitive Sagnac interferometer microscope that is immune to thermo-electrics artefacts. We found that the optical TSSE coefficient in the NiFe stripes geometry is about one order of magnitude smaller than that in the continuous NiFe film, which is due to the limited phonons path in the FM stripes along the thermal gradient direction. Our results further confirm the existence of TSSE response in conducting FM compounds.

Electric detection of the spin-Seebeck effect in magnetic insulator in the presence of interface barrier

International Nuclear Information System (INIS)

Uchida, K; Ota, T; Kajiwara, Y; Saitoh, E; Umezawa, H; Kawai, H

2011-01-01

The spin-Seebeck effect (SSE), the spin-voltage generation as a result of a temperature gradient, has recently been observed in ferrimagnetic insulator LaY 2 Fe 5 O 12 films by means of the inverse spin-Hall effect in Pt films. Here we investigate the SSE using LaY 2 Fe 5 O 12 /SiO 2 (Cu)/Pt systems, where the LaY 2 Fe 5 O 12 and Pt layers are separated by SiO 2 (Cu) thin-film barriers. The experimental results show that the SSE signal disappears in the LaY 2 Fe 5 O 12 /SiO 2 /Pt system, but the finite signal appears in the LaY 2 Fe 5 O 12 /Cu/Pt system, indicating that the direct contacts between the LaY 2 Fe 5 O 12 and normal metals is necessary for generating the SSE signal.

Study of Thermocurrents in ILC cavities via measurements of the Seebeck Effect in niobium, titanium, and stainless steel thermocouples

Energy Technology Data Exchange (ETDEWEB)

Cooley, Victoria [Univ. of Wisconsin, Madison, WI (United States)

2014-01-01

The goals of Fermilab’s Superconductivity and Radio Frequency Development Department are to engineer, fabricate, and improve superconducting radio frequency (SCRF) cavities in the interest of advancing accelerator technology. Improvement includes exploring possible limitations on cavity performance and mitigating such impediments. This report focuses on investigating and measuring the Seebeck Effect observed in cavity constituents titanium, niobium, and stainless steel arranged in thermocouples. These junctions exist between cavities, helium jackets, and bellows, and their connection can produce a loop of electrical current and magnetic flux spontaneously during cooling. The experimental procedure and results are described and analyzed. Implications relating the results to cavity performance are discussed.

Estimating Seebeck Coefficient of a p-Type High Temperature Thermoelectric Material Using Bee Algorithm Multi-layer Perception

Science.gov (United States)

Uysal, Fatih; Kilinc, Enes; Kurt, Huseyin; Celik, Erdal; Dugenci, Muharrem; Sagiroglu, Selami

2017-08-01

Thermoelectric generators (TEGs) convert heat into electrical energy. These energy-conversion systems do not involve any moving parts and are made of thermoelectric (TE) elements connected electrically in a series and thermally in parallel; however, they are currently not suitable for use in regular operations due to their low efficiency levels. In order to produce high-efficiency TEGs, there is a need for highly heat-resistant thermoelectric materials (TEMs) with an improved figure of merit ( ZT). Production and test methods used for TEMs today are highly expensive. This study attempts to estimate the Seebeck coefficient of TEMs by using the values of existing materials in the literature. The estimation is made within an artificial neural network (ANN) based on the amount of doping and production methods. Results of the estimations show that the Seebeck coefficient can approximate the real values with an average accuracy of 94.4%. In addition, ANN has detected that any change in production methods is followed by a change in the Seebeck coefficient.

Local Seebeck coefficient near the boundary in touching Cu/Bi-Te/Cu composites

International Nuclear Information System (INIS)

Yamashita, O.; Odahara, H.

2007-01-01

The thermo-emf ΔV and temperature difference ΔT across the boundary were measured as a function of r for the touching p- and n-type Cu/Bi-Te/Cu composites composed of a combination of t Bi-Te =2.0 mm and t Cu =0.3 mm, where ΔT is produced by imposing a constant voltage of 1.7 V on two Peltier modules connected in series and r is the distance from the boundary that corresponds to the interval s between two thermocouples. The resultant Seebeck coefficient α across the boundary was obtained from the relation α=ΔV/ΔT. As a result, the resultant α of the touching p- and n-type composites have surprisingly great local maximum values of 1330 and -1140 μV/K at r∼0.03 mm, respectively, and decreased rapidly with an increase of r to approach the Seebeck coefficients of the intrinsic Bi-Te compounds. The resultant maximum α of the touching p- and n-type Cu/Bi-Te/Cu composites are approximately 5.4 and 5.5 times higher in absolute value than those of the intrinsic Bi-Te compounds, respectively. It was thus clarified for the first time that the local Seebeck coefficient is enhanced most strongly in the Bi-Te region where there is an approximately 30-μm distance from the boundary, not at the boundary between Bi-Te compounds and copper. (orig.)

Spin Seebeck effect and ballistic transport of quasi-acoustic magnons in room-temperature yttrium iron garnet films

Science.gov (United States)

Noack, Timo B.; Musiienko-Shmarova, Halyna Yu; Langner, Thomas; Heussner, Frank; Lauer, Viktor; Heinz, Björn; Bozhko, Dmytro A.; Vasyuchka, Vitaliy I.; Pomyalov, Anna; L’vov, Victor S.; Hillebrands, Burkard; Serga, Alexander A.

2018-06-01

We studied the transient behavior of the spin current generated by the longitudinal spin Seebeck effect (LSSE) in a set of platinum-coated yttrium iron garnet (YIG) films of different thicknesses. The LSSE was induced by means of pulsed microwave heating of the Pt layer and the spin currents were measured electrically using the inverse spin Hall effect in the same layer. We demonstrate that the time evolution of the LSSE is determined by the evolution of the thermal gradient triggering the flux of thermal magnons in the vicinity of the YIG/Pt interface. These magnons move ballistically within the YIG film with a constant group velocity, while their number decays exponentially within an effective propagation length. The ballistic flight of the magnons with energies above 20 K is a result of their almost linear dispersion law, similar to that of acoustic phonons. By fitting the time-dependent LSSE signal for different film thicknesses varying by almost an order of magnitude, we found that the effective propagation length is practically independent of the YIG film thickness. We consider this fact as strong support of a ballistic transport scenario—the ballistic propagation of quasi-acoustic magnons in room temperature YIG.

Multifold Seebeck increase in RuO2 films by quantum-guided lanthanide dilute alloying

International Nuclear Information System (INIS)

Music, Denis; Basse, Felix H.-U.; Schneider, Jochen M.; Han, Liang; Borca-Tasciuc, Theo; Devender; Gengler, Jamie J.; Voevodin, Andrey A.; Ramanath, Ganpati

2014-01-01

Ab initio predictions indicating that alloying RuO 2 with La, Eu, or Lu can increase the Seebeck coefficient α manifold due to quantum confinement effects are validated in sputter-deposited La-alloyed RuO 2 films showing fourfold α increase. Combinatorial screening reveals that α enhancement correlates with La-induced lattice distortion, which also decreases the thermal conductivity twentyfold, conducive for high thermoelectric figures of merit. These insights should facilitate the rational design of high efficiency oxide-based thermoelectrics through quantum-guided alloying

Determining a hopping polaron's bandwidth from its Seebeck coefficient: Measuring the disorder energy of a non-crystalline semiconductor

International Nuclear Information System (INIS)

Emin, David

2016-01-01

Charge carriers that execute multi-phonon hopping generally interact strongly enough with phonons to form polarons. A polaron's sluggish motion is linked to slowly shifting atomic displacements that severely reduce the intrinsic width of its transport band. Here a means to estimate hopping polarons' bandwidths from Seebeck-coefficient measurements is described. The magnitudes of semiconductors' Seebeck coefficients are usually quite large (>k/|q| = 86 μV/K) near room temperature. However, in accord with the third law of thermodynamics, Seebeck coefficients must vanish at absolute zero. Here, the transition of the Seebeck coefficient of hopping polarons to its low-temperature regime is investigated. The temperature and sharpness of this transition depend on the concentration of carriers and on the width of their transport band. This feature provides a means of estimating the width of a polaron's transport band. Since the intrinsic broadening of polaron bands is very small, less than the characteristic phonon energy, the net widths of polaron transport bands in disordered semiconductors approach the energetic disorder experienced by their hopping carriers, their disorder energy

DC conductivity and Seebeck coefficient of nonstoichiometric MgCuZn ferrites

Directory of Open Access Journals (Sweden)

Madhuri W.

2017-02-01

Full Text Available Nonstoichiometric series of Mg0.5−xCuxZn0.5Fe1.9O4−δ where x = 0.0, 0.1, 0.15, 0.2 and 0.25 has been synthesized by conventional solid state reaction route. The single phase spinel structure of the double sintered ferrites was confirmed by X-ray diffraction patterns (XRD. The ferrite series was studied in terms of DC electrical conductivity and thermoelectric power in the temperature ranging from room temperature to 300 °C and 400 °C, respectively. It was observed that DC electrical conductivity and Seebeck coefficient α decreased with the increase in x. DC electrical conductivity was found to decrease by about 4 orders. All the compositions showed a negative Seebeck coefficient exhibiting n-type semiconducting nature. From the above experimental results, activation energy and mobility of all the samples were estimated. Small polaron hopping conduction mechanism was suggested for the series of ferrites. Owing to their low conductivity the nonstoichiometric MgCuZn ferrites are the best materials for transformer core and high definition television deflection yokes.

Crystal structure, magnetization, {sup 125}Te NMR, and Seebeck coefficient of Ge{sub 49}Te{sub 50}R{sub 1} (R = La, Pr, Gd, Dy, and Yb)

Energy Technology Data Exchange (ETDEWEB)

Levin, E.M., E-mail: levin@iastate.edu [Division of Materials Sciences and Engineering, US Department of Energy Ames Laboratory, Ames, IA 50011 (United States); Department of Physics and Astronomy, Iowa State University, Ames, IA 50011 (United States); Cooling, C. [Division of Materials Sciences and Engineering, US Department of Energy Ames Laboratory, Ames, IA 50011 (United States); Bud’ko, S.L. [Division of Materials Sciences and Engineering, US Department of Energy Ames Laboratory, Ames, IA 50011 (United States); Department of Physics and Astronomy, Iowa State University, Ames, IA 50011 (United States); Straszheim, W.E. [Division of Materials Sciences and Engineering, US Department of Energy Ames Laboratory, Ames, IA 50011 (United States); Lograsso, T.A. [Division of Materials Sciences and Engineering, US Department of Energy Ames Laboratory, Ames, IA 50011 (United States); Department of Materials Sciences and Engineering, Iowa State University, Ames, IA 50011 (United States)

2017-05-01

GeTe, a self-doping semiconductor, is a well-known base compound for thermoelectric and phase-change materials. It is known, that replacement of Ge in Ag{sub 6.5}Sb{sub 6.5}Ge{sub 37}Te{sub 50} (TAGS-85) material by rare earth Dy significantly enhances both the power factor and thermoelectric figure of merit. Here we demonstrate how replacement of Ge in GeTe by rare earths with different atomic size and localized magnetic moments affect XRD patterns, magnetization, {sup 125}Te NMR spectra and spin-lattice relaxation, and the Seebeck coefficient of the alloys with a nominal composition of Ge{sub 49}Te{sub 50}R{sub 1} (R = La, Pr, Gd, Dy, and Yb). SEM, EDS and WDS data show that rare earth atoms in the matrix are present at smaller extent compared to a nominal composition, whereas rare earth also is present in inclusions. Rare earths affect the Seebeck coefficient, which is a result of interplay between the reduction due to higher carrier concentration and enhancement due to magnetic contribution. The effect of replacement of Ge in GeTe by Dy on the Seebeck coefficient is smaller than that observed in Ag{sub 6.5}Sb{sub 6.5}Ge{sub 36} Te{sub 50}Dy{sub 1}. This can be explained by larger amount of rare earth, which can be embedded into the lattice of materials containing [Ag + Sb] atomic pairs and possible effect from these pairs. - Highlights: • The effects of rare earth in Ge{sub 49}Te{sub 50}R{sub 1} (R = La, Pr, Gd, Dy, and Yb) are studied. • Rare earth atoms in the matrix are present at smaller extent compared to a nominal composition. • The effect on the Seebeck coefficient is a result from carrier concentration and magnetic contribution.

Multifold Seebeck increase in RuO{sub 2} films by quantum-guided lanthanide dilute alloying

Energy Technology Data Exchange (ETDEWEB)

Music, Denis, E-mail: music@mch.rwth-aachen.de; Basse, Felix H.-U.; Schneider, Jochen M. [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Han, Liang; Borca-Tasciuc, Theo [Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, 110 8th St., Troy, New York 12180 (United States); Devender [Materials Science and Engineering Department, Rensselaer Polytechnic Institute, 110 8th St., Troy, New York 12180 (United States); Gengler, Jamie J. [Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, Ohio 45433 (United States); Spectral Energies, LLC, Dayton, Ohio 45431 (United States); Voevodin, Andrey A. [Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, Ohio 45433 (United States); Ramanath, Ganpati [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Materials Science and Engineering Department, Rensselaer Polytechnic Institute, 110 8th St., Troy, New York 12180 (United States)

2014-02-03

Ab initio predictions indicating that alloying RuO{sub 2} with La, Eu, or Lu can increase the Seebeck coefficient α manifold due to quantum confinement effects are validated in sputter-deposited La-alloyed RuO{sub 2} films showing fourfold α increase. Combinatorial screening reveals that α enhancement correlates with La-induced lattice distortion, which also decreases the thermal conductivity twentyfold, conducive for high thermoelectric figures of merit. These insights should facilitate the rational design of high efficiency oxide-based thermoelectrics through quantum-guided alloying.

A setup for measuring the Seebeck coefficient and the electrical resistivity of bulk thermoelectric materials

Science.gov (United States)

Fu, Qiang; Xiong, Yucheng; Zhang, Wenhua; Xu, Dongyan

2017-09-01

This paper presents a setup for measuring the Seebeck coefficient and the electrical resistivity of bulk thermoelectric materials. The sample holder was designed to have a compact structure and can be directly mounted in a standard cryostat system for temperature-dependent measurements. For the Seebeck coefficient measurement, a thin bar-shaped sample is mounted bridging two copper bases; and two ceramic heaters are used to generate a temperature gradient along the sample. Two type T thermocouples are used to determine both temperature and voltage differences between two widely separated points on the sample. The thermocouple junction is flattened into a disk and pressed onto the sample surface by using a spring load. The flexible fixation method we adopted not only simplifies the sample mounting process but also prevents thermal contact deterioration due to the mismatch of thermal expansion coefficients between the sample and other parts. With certain modifications, the sample holder can also be used for four-probe electrical resistivity measurements. High temperature measurements are essential for thermoelectric power generation. The experimental system we developed is capable of measuring the Seebeck coefficient and the electrical resistivity of bulk thermoelectric materials in a wide temperature range from 80 to 500 K, which can be further extended to even higher temperatures. Measurements on two standard materials, constantan and nickel, confirmed the accuracy and the reliability of the system.

Relativistic quasiparticle band structures of Mg2Si, Mg2Ge, and Mg2Sn: Consistent parameterization and prediction of Seebeck coefficients

Science.gov (United States)

Shi, Guangsha; Kioupakis, Emmanouil

2018-02-01

We apply density functional and many-body perturbation theory calculations to consistently determine and parameterize the relativistic quasiparticle band structures of Mg2Si, Mg2Ge, and Mg2Sn, and predict the Seebeck coefficient as a function of doping and temperature. The quasiparticle band gaps, including spin-orbit coupling effects, are determined to be 0.728 eV, 0.555 eV, and 0.142 eV for Mg2Si, Mg2Ge, and Mg2Sn, respectively. The inclusion of the semicore electrons of Mg, Ge, and Sn in the valence is found to be important for the accurate determination of the band gaps of Mg2Ge and Mg2Sn. We also developed a Luttinger-Kohn Hamiltonian and determined a set of band parameters to model the near-edge relativistic quasiparticle band structure consistently for all three compounds that can be applied for thermoelectric device simulations. Our calculated values for the Seebeck coefficient of all three compounds are in good agreement with the available experimental data for a broad range of temperatures and carrier concentrations. Our results indicate that quasiparticle corrections are necessary for the accurate determination of Seebeck coefficients at high temperatures at which bipolar transport becomes important.

Measurement of the high-temperature Seebeck coefficient of thin films by means of an epitaxially regrown thermometric reference material.

Science.gov (United States)

Ramu, Ashok T; Mages, Phillip; Zhang, Chong; Imamura, Jeffrey T; Bowers, John E

2012-09-01

The Seebeck coefficient of a typical thermoelectric material, silicon-doped InGaAs lattice-matched to InP, is measured over a temperature range from 300 K to 550 K. By depositing and patterning a thermometric reference bar of silicon-doped InP adjacent to a bar of the material under test, temperature differences are measured directly. This is in contrast to conventional two-thermocouple techniques that subtract two large temperatures to yield a small temperature difference, a procedure prone to errors. The proposed technique retains the simple instrumentation of two-thermocouple techniques while eliminating the critical dependence of the latter on good thermal contact. The repeatability of the proposed technique is demonstrated to be ±2.6% over three temperature sweeps, while the repeatability of two-thermocouple measurements is about ±5%. The improved repeatability is significant for reliable reporting of the ZT figure of merit, which is proportional to the square of the Seebeck coefficient. The accuracy of the proposed technique depends on the accuracy with which the high-temperature Seebeck coefficient of the reference material may be computed or measured. In this work, the Seebeck coefficient of the reference material, n+ InP, is computed by rigorous solution of the Boltzmann transport equation. The accuracy and repeatability of the proposed technique can be systematically improved by scaling, and the method is easily extensible to other material systems currently being investigated for high thermoelectric energy conversion efficiency.

Unidirectional Spin-Wave-Propagation-Induced Seebeck Voltage in a PEDOT:PSS/YIG Bilayer

Science.gov (United States)

Wang, P.; Zhou, L. F.; Jiang, S. W.; Luan, Z. Z.; Shu, D. J.; Ding, H. F.; Wu, D.

2018-01-01

We clarify the physical origin of the dc voltage generation in a bilayer of a conducting polymer film and a micrometer-thick magnetic insulator Y3Fe5O12 (YIG) film under ferromagnetic resonance and/or spin wave excitation conditions. The previous attributed mechanism, the inverse spin Hall effect in the polymer [Nat. Mater. 12, 622 (2013), 10.1038/nmat3634], is excluded by two control experiments. We find an in-plane temperature gradient in YIG which has the same angular dependence with the generated voltage. Both vanish when the YIG thickness is reduced to a few nanometers. Thus, we argue that the dc voltage is governed by the Seebeck effect in the polymer, where the temperature gradient is created by the nonreciprocal magnetostatic surface spin wave propagation in YIG.

Influence of Thickness and Interface on the Low-Temperature Enhancement of the Spin Seebeck Effect in YIG Films

Directory of Open Access Journals (Sweden)

Er-Jia Guo

2016-07-01

Full Text Available The temperature-dependent longitudinal spin Seebeck effect (LSSE in heavy metal (HM/Y_{3}Fe_{5}O_{12} (YIG hybrid structures is investigated as a function of YIG film thickness, magnetic field strength, and different HM detection materials. The LSSE signal shows a large enhancement with reductions in temperature, leading to a pronounced peak at low temperatures. We find that the LSSE peak temperature strongly depends on the film thickness as well as on the magnetic field. Our result can be well explained in the framework of magnon-driven LSSE by taking into account the temperature-dependent effective propagation length of thermally excited magnons in the bulk of the material. We further demonstrate that the LSSE peak is significantly shifted by changing the interface coupling to an adjacent detection layer, revealing a more complex behavior beyond the currently discussed bulk effect. By direct microscopic imaging of the interface, we correlate the observed temperature dependence with the interface structure between the YIG and the adjacent metal layer. Our results highlight the role of interface effects on the temperature-dependent LSSE in HM/YIG system, suggesting that the temperature-dependent spin current transparency strikingly relies on the interface conditions.

Thermal conductivity of thin insulating films determined by tunnel magneto-Seebeck effect measurements and finite-element modeling

Science.gov (United States)

Huebner, Torsten; Martens, Ulrike; Walowski, Jakob; Münzenberg, Markus; Thomas, Andy; Reiss, Günter; Kuschel, Timo

2018-06-01

In general, it is difficult to access the thermal conductivity of thin insulating films experimentally by electrical means. Here, we present a new approach utilizing the tunnel magneto-Seebeck effect (TMS) in combination with finite-element modeling (FEM). We detect the laser-induced TMS and the absolute thermovoltage of laser-heated magnetic tunnel junctions with 2.6 nm thin barriers of MgAl2O4 (MAO) and MgO, respectively. A second measurement of the absolute thermovoltage after a dielectric breakdown of the barrier grants insight into the remaining thermovoltage of the stack. Thus, the pure TMS without any parasitic Nernst contributions from the leads can be identified. In combination with FEM via COMSOL, we are able to extract values for the thermal conductivity of MAO (0.7 W (K · m)‑1) and MgO (5.8 W (K · m)‑1), which are in very good agreement with theoretical predictions. Our method provides a new promising way to extract the experimentally challenging parameter of the thermal conductivity of thin insulating films.

Giant Pressure-Induced Enhancement of Seebeck Coefficient and Thermoelectric Efficiency in SnTe

Energy Technology Data Exchange (ETDEWEB)

Baker, Jason; Kumar, Ravhi; Park, Changyong; Kenney-Benson, Curtis; Cornelius, Andrew; Velisavljevic, Nenad (CIW); (LANL); (UNLV)

2017-10-30

The thermoelectric properties of polycrystalline SnTe have been measured up to 4.5 GPa at 330 K. SnTe shows an enormous enhancement in Seebeck coefficient, greater than 200 % after 3 GPa, which correlates to a known pressure-induced structural phase transition that is observed through simultaneous in situ X-ray diffraction measurement. Electrical resistance and relative changes to the thermal conductivity were also measured, enabling the determination of relative changes in the dimensionless figure of merit (ZT), which increases dramatically after 3 GPa, reaching 350 % of the lowest pressure ZT value. The results demonstrate a fundamental relationship between structure and thermoelectric behaviours and suggest that pressure is an effective tool to control them.

The Seebeck coefficient of monocrystalline α-SiC and polycrystalline β-SiC measured at 300-533 K

Science.gov (United States)

Abu-Ageel, N.; Aslam, M.; Ager, R.; Rimai, L.

2000-01-01

The temperature dependence of the Seebeck coefficient of polycrystalline icons/Journals/Common/beta" ALT="beta" ALIGN="TOP"/> -SiC films deposited on quartz substrates by laser ablation and of commercially available icons/Journals/Common/alpha" ALT="alpha" ALIGN="TOP"/> -SiC wafers is reported in a temperature range of 300-533 K for the first time. The Seebeck emf of icons/Journals/Common/alpha" ALT="alpha" ALIGN="TOP"/> -SiC substrates and icons/Journals/Common/beta" ALT="beta" ALIGN="TOP"/> -SiC samples ranges between -9 µV °C-1 and -108 µV °C-1 which is higher than that of commercial Pt thermocouples.

Measurement setup for the simultaneous determination of diffusivity and Seebeck coefficient in a multi-anvil apparatus.

Science.gov (United States)

Jacobsen, M K; Liu, W; Li, B

2012-09-01

In this paper, a high pressure setup is presented for performing simultaneous measurements of Seebeck coefficient and thermal diffusivity in multianvil apparatus for the purpose of enhancing the study of transport phenomena. Procedures for the derivation of Seebeck coefficient and thermal diffusivity/conductivity, as well as their associated sources of errors, are presented in detail, using results obtained on the filled skutterudite, Ce(0.8)Fe(3)CoSb(12,) up to 12 GPa at ambient temperature. Together with recent resistivity and sound velocity measurements in the same apparatus, these developments not only provide the necessary data for a self-consistent and complete characterization of the figure of merit of thermoelectric materials under pressure, but also serve as an important tool for furthering our knowledge of the dynamics and interplay between these transport phenomena.

Investigation of the spin Seebeck effect and anomalous Nernst effect in a bulk carbon material

Science.gov (United States)

Wongjom, Poramed; Pinitsoontorn, Supree

2018-03-01

Since the discovery of the spin Seebeck effect (SSE) in 2008, it has become one of the most active topics in the spin caloritronics research field. It opened up a new way to create the spin current by a combination of magnetic fields and heat. The SSE was observed in many kinds of materials including metallic, semiconductor, or insulating magnets, as well as non-magnetic materials. On the other hand, carbon-based materials have become one of the most exciting research areas recently due to its low cost, abundance and some exceptional functionalities. In this work, we have investigated the possibility of the SSE in bulk carbon materials for the first time. Thin platinum film (Pt), coated on the smoothened surface of the bulk carbon, was used as the spin detector via the inverse spin Hall effect (ISHE). The experiment for observing longitudinal SSE in the bulk carbon was set up by applying a magnetic field up to 30 kOe to the sample with the direction perpendicular to the applied temperature gradient. The induced voltage from the SSE was extracted. However, for conductive materials, e.g. carbon, the voltage signal under this set up could be a combination of the SSE and the anomalous Nernst effect (ANE). Therefore, two measurement configurations were carried out, i.e. the in-plane magnetization (IM), and the perpendicular-to-plane magnetization (PM). For the IM configuration, the SSE + ANE signals were detected where as the only ANE signal existed in the PM configuration. The results showed that there were the differences between the voltage signals from the IM and PM configurations implying the possibility of the SSE in the bulk carbon material. Moreover, it was found that the difference in the IM and PM signals was a function of the magnetic field strength, temperature difference, and measurement temperature. Although the magnitude of the possible SSE voltage in this experiment was rather low (less than 0.5 μV at 50 K), this research showed that potential of using

Effects of Nernst-Ettinghausen, Seebeck and Hall in Sb sub 2 Te sub 3 monocrystals

CERN Document Server

Zhitinskaya, M K; Ivanova, L D

2002-01-01

In Sb sub 2 Te sub 3 top-quality single crystals grown following the Czochralski method within 77-420 K range one measured temperature dependences of the following components of kinetic coefficients: electrical conductivity within sigma sub 1 sub 1 chip plane, of the Seebeck S sub 1 sub 1 and S sub 3 sub 3 , of the Hall R sub 1 sub 2 sub 3 and R sub 3 sub 2 sub 1 and of the Nernst-Ettinghausen Q sub 1 sub 2 sub 3. One analyzed the derived results on the basis of the phenomenological theory. It is shown that the essential peculiarities of the experimental data may be explained in terms of a two-region model with anisotropy of mobility of the first and second types holes towards the chip (epsilon sub g approx = 0.3 eV), as well as, the energy gap between the ground and auxiliary extremes of the valence band (DELTA epsilon subupsilon approx 0.1 eV)

Long annealing effect on spin Seebeck devices fabricated using Ce x Y3- x Fe5O12 deposited by metal-organic decomposition

Science.gov (United States)

Ono, Tatsuyoshi; Hirata, Satoshi; Amemiya, Yoshiteru; Tabei, Tetsuo; Yokoyama, Shin

2018-04-01

The effects of Ce content and annealing temperature on the electromotive force produced by spin Seebeck devices fabricated using Ce x Y3- x Fe5O12 deposited by metal-organic decomposition was investigated. The Ce content was first varied (x = 0,1,2,3) for a fixed annealing condition of 3 h at 900 °C. It was found that increasing the Ce content led to a decrease in electromotive force, which meant that x = 0 was the optimum Ce content. Next, the effect of annealing temperature was investigated for a Ce1Y2Fe5O12 film for an annealing time of 14 h. The highest electromotive force of 24.0 µV/50 °C was obtained for a sample annealed for 14 h at 800 °C, although the X-ray diffraction peaks were weaker than those for a sample annealed for 14 h at 950 °C.

Electronic-structure origin of the anisotropic thermopower of nanolaminated Ti3SiC2 determined by polarized x-ray spectroscopy and Seebeck measurements

DEFF Research Database (Denmark)

Magnuson, Martin; Mattesini, Maurizio; Van Nong, Ngo

2012-01-01

Nanolaminated materials exhibit characteristic magnetic, mechanical, and thermoelectric properties, with large contemporary scientific and technological interest. Here we report on the anisotropic Seebeck coefficient in nanolaminated Ti3SiC2 single-crystal thin films and trace the origin to aniso......Nanolaminated materials exhibit characteristic magnetic, mechanical, and thermoelectric properties, with large contemporary scientific and technological interest. Here we report on the anisotropic Seebeck coefficient in nanolaminated Ti3SiC2 single-crystal thin films and trace the origin...... value of 4–6 μV/K. Employing a combination of polarized angle-dependent x-ray spectroscopy and density functional theory we directly show electronic structure anisotropy in inherently nanolaminated Ti3SiC2 single-crystal thin films as a model system. The density of Ti 3d and C 2p states at the Fermi...... level in the basal ab plane is about 40% higher than along the c axis. The Seebeck coefficient is related to electron and hole-like bands close to the Fermi level, but in contrast to ground state density functional theory modeling, the electronic structure is also influenced by phonons that need...

ELECTRICAL RESISTIVITY AND SEEBECK COEFFICIENT IN Ca(LaMnO COMPOUNDS PREPARED BY SOLID STATE REACTION METHOD

Directory of Open Access Journals (Sweden)

Jorge I. Villa

2017-01-01

Full Text Available By using the solid state reaction method samples of  Ca1-xLaxMnO3 (0 ≤ x ≥ 0.15 were prepared. Their transport properties were studied by electrical resistivity rho(T and Seebeck coefficient S(T measurements as a function of temperature and lanthanum content, in the temperature range between 100 and 290K. The structural and morphological properties were studied by X-ray diffraction analysis (XRD and scanning electron microscopy (SEM, respectively. The Seebeck coefficient is negative throughout the studied temperature range indicating a conduction given by negative charge carriers, its magnitude decreases with the lanthanum content from |-261| mV/K to |-120| mV/K. The electrical resistivity shows a semiconducting behavior, it was interpreted in terms of small polaron hopping model. Thermoelectric properties of the obtained compounds were studied by the thermoelectric power factor PF, which reaches maximum values around 2mW/K2cm, these values become this kind of ceramics promising thermoelectric compound, to be used in technological applications.

The bimodal distribution spin Seebeck effect enhancement in epitaxial Ni0.65Zn0.35Al0.8Fe1.2O4 thin film

Science.gov (United States)

Wang, Hua; Hou, Dazhi; Kikkawa, Takashi; Ramos, Rafael; Shen, Ka; Qiu, Zhiyong; Chen, Yao; Umeda, Maki; Shiomi, Yuki; Jin, Xiaofeng; Saitoh, Eiji

2018-04-01

The temperature dependence of the spin Seebeck effect (SSE) in epitaxial Ni0.65Zn0.35Al0.8Fe1.2O4 (NZA ferrite) thin film has been investigated systematically. The SSE at high fields shows a bimodal distribution enhancement from 3 K to 300 K and is well fitted with a double-peak Lorentzian function. We speculate the symmetric SSE enhancement in Pt/NZA ferrite bilayer, which is different from the magnon polarons induced asymmetric spikes in the SSE of Pt/YIG [T. Kikkawa et al. Phys. Rev. Lett. 117, 207203 (2016)], may result from the magnon-phonon interactions occurring at the intersections of the quantized magnon and phonon dispersions. The SSE results are helpful for the investigation of the magnon-phonon interaction in the magnetic ultrathin films.

Seebeck and Nernst effects in the mixed state of YBa2Cu3Oy single crystals: A probe for the scattering rate of quasiparticles

International Nuclear Information System (INIS)

Sato, Y.; Terasaki, I.; Tajima, S.

1996-01-01

Transport properties under a temperature gradient were investigated in the mixed state of YBa 2 Cu 3 O y single crystals. The ratio of the Seebeck coefficient S xx to the resistivity ρ xx , which is proportional to the thermal current, exhibits a remarkable magnetic field dependence. This implies that the quasiparticles driven by the temperature gradient are scattered by vortices to reduce their lifetime. Quantitative investigation for the H dependence of S xx /ρ xx reveals the lifetime enhancement of the quasiparticle below T c . copyright 1996 The American Physical Society

Impurity effect in the quantum Nernst effect

International Nuclear Information System (INIS)

Shirasaki, Ryoen; Nakamura, Hiroaki; Hatano, Naomichi

2005-11-01

We theoretically study the Nernst effect and the Seebeck effect in a two-dimensional electron ga in a strong magnetic field and a temperature gradient under adiabatic condition. We recently predicted for a pure system in the quantum Hall regime that the Nernst coefficients strongly suppressed and the thermal conductance is quantized due to quantum ballistic transport. Taking account of impurities, we here compute the Nernst coefficient and the Seebeck coefficient when the chemical potential coincides with a Landau level. We adopt the self-consistent Born approximation and consider the linear transport equations of the thermal electric transport induced by the temperature gradient. The thermal conductance and the Nernst coefficient are slightly modified from the pure case and the Seebeck coefficient newly appears because of the impurity scattering of electrons in the bulk states. (author)

Dependence of Seebeck coefficient on a load resistance and energy conversion efficiency in a thermoelectric composite

International Nuclear Information System (INIS)

Yamashita, Osamu; Odahara, Hirotaka; Ochi, Takahiro; Satou, Kouji

2007-01-01

The thermo-emf ΔV and current ΔI generated by imposing the alternating temperature gradients (ATG) at a period of T and the steady temperature gradient (STG) on a thermoelectric (TE) composite were measured as a function of t, where t is the lapsed time and T was varied from 60 to or ∞ s. The STG and ATG were produced by imposing steadily and alternatively a source voltage V in the range from 1.0 to 4.0 V on two Peltier modules sandwiching a composite. ΔT, ΔV, ΔI and V P oscillate at a period T and their waveforms vary significantly with a change of T, where ΔV and V P are the voltage drops in a load resistance R L and in resistance R P of two modules. The resultant Seebeck coefficient |α| = |ΔV|/ΔT of a composite under the STG was found to be expressed as |α| = |α 0 |(1 - R comp /R T ), where R T is the total resistance of a circuit for measuring the output signals and R comp is the resistance of a composite. The effective generating power ΔW eff has a local maximum at T = 960 s for the p-type composite and at T = 480 s for the n-type one. The maximum energy conversion efficiency η of the p- and n-type composites under the ATG produced by imposing a voltage of 4.0 V at an optimum period were 0.22 and 0.23% at ΔT eff = 50 K, respectively, which are 42 and 43% higher than those at ΔT = 42 K under the STG. These maximum η for a TE composite sandwiched between two Peltier modules, were found to be expressed theoretically in terms of R P , R T , R L , α P and α, where α P and α are the resultant Seebeck coefficients of Peltier modules and a TE composite

Simultaneous Enhancement of Electrical Conductivity and Seebeck Coefficient of [6,6]-Phenyl-C71 Butyric Acid Methyl Ester (PC70BM by Adding Co-Solvents

Directory of Open Access Journals (Sweden)

Mina Rastegaralam

2018-05-01

Full Text Available Chemical modification by co-solvents added to [6,6]-Phenyl-C71 butyric acid methyl ester, commonly known as an n-type semiconducting fullerene derivative PC70BM, is reported to change the electrical and thermoelectric properties of this system. Power factor of the casted PC70BM samples achieves values higher than that determined for a variety of organic compounds, including conducting polymers, such as PEDOT:PSS in the pristine form. After chemical functionalization by different solvents, namely N,N-Dimethylformamide (DMF, dimethyl sulfoxide (DMSO, N-Methyl-2-pyrrolidone (NMP, acetonitrile (AC, and 1,2-Dichloroethane (DCE, the four-probe in-plane electrical conductivity and Seebeck coefficient measurements indicate a simultaneous increase of the electrical conductivity and the Seebeck coefficient. The observed effect is more pronounced for solvents with a high boiling point, such as N,N-Dimethylformamide (DMF, dimethyl sulfoxide (DMSO, and N-Methyl-2-pyrrolidone (NMP, than in acetonitrile (AC and 1,2-Dichloroethane (DCE. We identified the origin of these changes using Hall mobility measurements, which demonstrate enhancement of the PC70BM charge carrier mobility upon addition of the corresponding solvents due to the improved packaging of the fullerene compound and chemical interaction with entrapped solvent molecules within the layers.

Magneto-thermoelectric effects in NiFe thin films

Energy Technology Data Exchange (ETDEWEB)

Schmid, Maximilian

2015-11-01

In this thesis magneto-thermoelectric effects are investigated in a systematic way to separate the transverse spin Seebeck effect from other parasitic effects like the anomalous Nernst effect. In contrast to the first studies found in the literature, in NiFe thin films a contribution of the transverse spin Seebeck effect can be excluded. This surprising outcome was crosschecked in a variety of different sample layouts and collaborations with other universities to ensure the validity of these results. In general, this thesis solves a long time discussion about the existence of the transverse spin Seebeck effect in NiFe films and supports the importance of control measurements for the scientific community. Even if such ''negative'' results may not be the award winning ones, new discoveries should be treated with constructive criticism and be checked carefully by the scientific community.

High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films

Science.gov (United States)

Adnane, L.; Dirisaglik, F.; Cywar, A.; Cil, K.; Zhu, Y.; Lam, C.; Anwar, A. F. M.; Gokirmak, A.; Silva, H.

2017-09-01

High-temperature characterization of the thermoelectric properties of chalcogenide Ge2Sb2Te5 (GST) is critical for phase change memory devices, which utilize self-heating to quickly switch between amorphous and crystalline states and experience significant thermoelectric effects. In this work, the electrical resistivity and Seebeck coefficient are measured simultaneously as a function of temperature, from room temperature to 600 °C, on 50 nm and 200 nm GST thin films deposited on silicon dioxide. Multiple heating and cooling cycles with increasingly maximum temperature allow temperature-dependent characterization of the material at each crystalline state; this is in contrast to continuous measurements which return the combined effects of the temperature dependence and changes in the material. The results show p-type conduction (S > 0), linear S(T), and a positive Thomson coefficient (dS/dT) up to melting temperature. The results also reveal an interesting linearity between dS/dT and the conduction activation energy for mixed amorphous-fcc GST, which can be used to estimate one parameter from the other. A percolation model, together with effective medium theory, is adopted to correlate the conductivity of the material with average grain sizes obtained from XRD measurements. XRD diffraction measurements show plane-dependent thermal expansion for the cubic and hexagonal phases.

Strain effect on electronic structure and thermoelectric properties of orthorhombic SnSe: A first principles study

Directory of Open Access Journals (Sweden)

Do Duc Cuong

2015-11-01

Full Text Available Strain effect on thermoelectricity of orthorhombic SnSe is studied using density function theory. The Seebeck coefficients are obtained by solving Boltzmann Transport equation (BTE with interpolated band energies. As expected from the crystal structure, calculated Seebeck coefficients are highly anisotropic, and agree well with experiment. Changes in the Seebeck coefficients are presented, when strain is applied along b and c direction with strength from -3% to +3%, where influence by band gaps and band dispersions are significant. Moreover, for compressive strains, the sign change of Seebeck coefficients at particular direction suggests that the bipolar transport is possible for SnSe.

Thermoelectric and thermomagnetic effects in high-temperature superconductors

International Nuclear Information System (INIS)

Huebener, R.P.; Ri, H.C.; Gross, R.; Kober, F.

1992-01-01

In the mixed state of high-temperature superconductors the dominant part of the Seebeck and Nernst effect is due to the thermal diffusion of quasiparticles and vortices, respectively. The authors' understanding of the Seebeck effect is based on the two-fluid counterflow model of Ginzburg and its extension to the mixed state with the presence of vortices. From the Nernst effect the transport entropy of the vortices is obtained. In this paper summarize the recent thermoelectric and thermomagnetic experiments, paying also attention to the role of the Magnus force (Hall effect) and to the thermal fluctuation effects near T c

Characterization of Lorenz number with Seebeck coefficient measurement

International Nuclear Information System (INIS)

Kim, Hyun-Sik; Gibbs, Zachary M.; Tang, Yinglu; Wang, Heng; Snyder, G. Jeffrey

2015-01-01

In analyzing zT improvements due to lattice thermal conductivity (κ L ) reduction, electrical conductivity (σ) and total thermal conductivity (κ Total ) are often used to estimate the electronic component of the thermal conductivity (κ E ) and in turn κ L from κ L = ∼ κ Total − LσT. The Wiedemann-Franz law, κ E = LσT, where L is Lorenz number, is widely used to estimate κ E from σ measurements. It is a common practice to treat L as a universal factor with 2.44 × 10 −8 WΩK −2 (degenerate limit). However, significant deviations from the degenerate limit (approximately 40% or more for Kane bands) are known to occur for non-degenerate semiconductors where L converges to 1.5 × 10 −8 WΩK −2 for acoustic phonon scattering. The decrease in L is correlated with an increase in thermopower (absolute value of Seebeck coefficient (S)). Thus, a first order correction to the degenerate limit of L can be based on the measured thermopower, |S|, independent of temperature or doping. We propose the equation: L=1.5+exp[−(|S|)/(116) ] (where L is in 10 −8 WΩK −2 and S in μV/K) as a satisfactory approximation for L. This equation is accurate within 5% for single parabolic band/acoustic phonon scattering assumption and within 20% for PbSe, PbS, PbTe, Si 0.8 Ge 0.2 where more complexity is introduced, such as non-parabolic Kane bands, multiple bands, and/or alternate scattering mechanisms. The use of this equation for L rather than a constant value (when detailed band structure and scattering mechanism is not known) will significantly improve the estimation of lattice thermal conductivity

Reliable measurement of the Seebeck coefficient of organic and inorganic materials between 260 K and 460 K

Energy Technology Data Exchange (ETDEWEB)

Beretta, D.; Lanzani, G. [Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia, via Pascoli 70/3, 20133 Milano (MI) (Italy); Dipartimento di Fisica, P.zza Leonardo da Vinci 32, Politecnico di Milano, 20133 Milano (MI) (Italy); Bruno, P.; Caironi, M., E-mail: mario.caironi@iit.it [Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia, via Pascoli 70/3, 20133 Milano (MI) (Italy)

2015-07-15

A new experimental setup for reliable measurement of the in-plane Seebeck coefficient of organic and inorganic thin films and bulk materials is reported. The system is based on the “Quasi-Static” approach and can measure the thermopower in the range of temperature between 260 K and 460 K. The system has been tested on a pure nickel bulk sample and on a thin film of commercially available PEDOT:PSS deposited by spin coating on glass. Repeatability within 1.5% for the nickel sample is demonstrated, while accuracy in the measurement of both organic and inorganic samples is guaranteed by time interpolation of data and by operating with a temperature difference over the sample of less than 1 K.

Annealing-temperature-dependent voltage-sign reversal in all-oxide spin Seebeck devices using RuO2

Science.gov (United States)

Kirihara, Akihiro; Ishida, Masahiko; Yuge, Ryota; Ihara, Kazuki; Iwasaki, Yuma; Sawada, Ryohto; Someya, Hiroko; Iguchi, Ryo; Uchida, Ken-ichi; Saitoh, Eiji; Yorozu, Shinichi

2018-04-01

Thermoelectric converters based on the spin Seebeck effect (SSE) have attracted great attention due to their potential to offer novel applications such as energy harvesting and heat-flow sensing. For converting a SSE-induced spin current into an electric current, a transition metal film such as Pt, which exhibits large inverse spin-Hall effect (ISHE), has been typically used. In this work, we show an all-oxide SSE device using ruthenium oxide (RuO2) as a conductive film. We found that both the sign and magnitude of the SSE-induced ISHE voltage V appearing in the RuO2 film changes depending on the post annealing temperature, and that the magnitude can become larger than that of a standard SSE device using Pt. The similar sign change was also observed in Hall-resistance measurements of the RuO2 films. X-ray absorption fine structure (XAFS) spectra of as-deposited and annealed RuO2 revealed that the annealing process substantially improved the long-range crystalline order in RuO2. This suggests that change in the crystalline order may modify the dominant ISHE mechanism or electronic states in RuO2, leading to the sign reversal of V as well as the Hall coefficient. Our result demonstrates that RuO2 is an interesting material not only as a practical ISHE film but also as a testbed to study physics of spin-to-charge converters that depend on their crystalline order.

Effets Seebeck et Nernst dans les cuprates: Etude de la reconstruction de la surface de Fermi sous champ magnetique intense

Science.gov (United States)

Laliberte, Francis

2010-06-01

Ce memoire presente des mesures de transport thermoelectrique, les effets Seebeck et Nernst, dans une serie d'echantillons de supraconducteurs a haute temperature critique. Des resultats obtenus recemment au Laboratoire National des Champs Magnetiques Intenses a Grenoble sur La1.7Eu0.2Sr0.1 CuO4, La1.675Eu0.2Sr0.125CuO 4, La1.64Eu0.2Sr0.16CuO4, La1.74Eu0.1Sr0.16CuO4 et La 1.4Nd0.4Sr0.2CuO4 sont analyses. Une attention particuliere est accordee aux equations de la theorie semi-classique du transport et leur validite est verifiee. La procedure experimentale et les materiaux utilises pour concevoir les montages de mesures sont expliques en detail. Enfin, un chapitre est dedie a l'explication et l'interpretation des resultats de transport thermoelectrique sur YBa2Cu3O6+delta publies au cours de l'hiver 2010 dans les revues Nature et Physical Review Letters. Les donnees d'effet Seebeck dans les echantillons de La 1.8-x,Eu0.2SrxCuO 4, ou un changement de signe est observe, permettent de conclure a la presence d'une poche d'electrons dans la surface de Fermi qui domine le transport a basse temperature dans la region sous-dopee du diagramme de phase. Cette conclusion est similaire a celle obtenue par des mesures d'effet Hall dans YBa 2Cu3O6+delta et elle cadre bien dans un scenario de reconstruction de la surface de Fermi. Les donnees d'effet Nernst recueillies indiquent que la contribution des fluctuations supraconductrices est limitee a un modeste intervalle de temperature au-dessus de la temperature critique.

Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In2O3 films

Science.gov (United States)

Preissler, Natalie; Bierwagen, Oliver; Ramu, Ashok T.; Speck, James S.

2013-08-01

A comprehensive study of the room-temperature electrical and electrothermal transport of single-crystalline indium oxide (In2O3) and indium tin oxide (ITO) films over a wide range of electron concentrations is reported. We measured the room-temperature Hall mobility μH and Seebeck coefficient S of unintentionally doped and Sn-doped high-quality, plasma-assisted molecular-beam-epitaxy-grown In2O3 for volume Hall electron concentrations nH from 7×1016 cm-3 (unintentionally doped) to 1×1021 cm-3 (highly Sn-doped, ITO). The resulting empirical S(nH) relation can be directly used in other In2O3 samples to estimate the volume electron concentration from simple Seebeck coefficient measurements. The mobility and Seebeck coefficient were modeled by a numerical solution of the Boltzmann transport equation. Ionized impurity scattering and polar optical phonon scattering were found to be the dominant scattering mechanisms. Acoustic phonon scattering was found to be negligible. Fitting the temperature-dependent mobility above room temperature of an In2O3 film with high mobility allowed us to find the effective Debye temperature (ΘD=700 K) and number of phonon modes (NOPML=1.33) that best describe the polar optical phonon scattering. The modeling also yielded the Hall scattering factor rH as a function of electron concentration, which is not negligible (rH≈1.4) at nondegenerate electron concentrations. Fitting the Hall-scattering-factor corrected concentration-dependent Seebeck coefficient S(n) for nondegenerate samples to the numerical solution of the Boltzmann transport equation and to widely used, simplified equations allowed us to extract an effective electron mass of m*=(0.30±0.03)me (with free electron mass me). The modeled mobility and Seebeck coefficient based on polar optical phonon and ionized impurity scattering describes the experimental results very accurately up to electron concentrations of 1019 cm-3, and qualitatively explains a mobility plateau or local

Heat and spin interconversion

International Nuclear Information System (INIS)

Ohnuma, Yuichi; Matsuo, Mamoru; Maekawa, Sadamichi; Saitoh, Eeiji

2017-01-01

Spin Seebeck and spin Peltier effects, which are mutual conversion phenomena of heat and spin, are discussed on the basis of the microscopic theory. First, the spin Seebeck effect, which is the spin-current generation due to heat current, is discussed. The recent progress in research on the spin Seebeck effect are introduced. We explain the origin of the observed sign changes of the spin Seebeck effect in compensated ferromagnets. Next, the spin Peltier effect, which is the heat-current generation due to spin current, is discussed. Finally, we show that the spin Seebeck and spin Peltier effects are summarized by Onsager's reciprocal relation and derive Kelvin's relation for the spin and heat transports. (author)

Electrical conductivity and seebeck coefficient of nonstoichiometric La1-xSrxCoO3-δ

International Nuclear Information System (INIS)

Mizusaki, J.; Tabuchi, J.; Matsuura, T.; Yamauchi, S.; Fucki, K.

1989-01-01

This paper reports the conductivity and Seebeck coefficient of the perovskite-type oxides La 1 - x Sr x CoO 3 - δ (x = 0-0.7) measured in 10 - 5 -1 atm O 2 gas at temperatures 25 degrees-1000 degrees C. The results are discussed in relation to the lattice-parameter and oxygen nonstoichiometry. Close relationships were found between the temperature dependence of the conductivity and the rhombohedral angle, α. For La 1 - x Sr x CoO 3 - δ 3 - δ above 800 degrees C and La 1 - x Sr x CoO 3 - δ with x > 0.5 at room temperature), the conductivity decreases with temperature, suggesting metallic conduction. For La 1 - x Sr x CoO 3 - δ with α > 60.4 degrees, the conductivity increases with temperature like semiconductors. In the oxides with metallic conduction, the conductivity was found to decrease with increase in the oxygen vacancy concentration. Because the conduction band is composed of the Co-O-Co network, it is considered that the band is distributed by the formation of oxygen vacancies and becomes narrower, resulting in the decrease in conductivity

Thermoelectric effects in magnetic nanostructures

NARCIS (Netherlands)

Hatami, Moosa; Bauer, Gerrit E.W.; Zhang, Q.F.; Kelly, Paul J.

2009-01-01

We model and evaluate the Peltier and Seebeck effects in magnetic multilayer nanostructures by a finite-element theory of thermoelectric properties. We present analytical expressions for the thermopower and the current-induced temperature changes due to Peltier cooling/heating. The thermopower of a

Anisotropy of the Seebeck and Nernst coefficients in parent compounds of the iron-based superconductors

Science.gov (United States)

Matusiak, Marcin; Babij, Michał; Wolf, Thomas

2018-03-01

In-plane longitudinal and transverse thermoelectric phenomena in two parent compounds of iron-based superconductors are studied. Namely, the Seebeck (S ) and Nernst (ν) coefficients were measured in the temperature range 10-300 K for BaF e2A s2 and CaF e2A s2 single crystals that were detwinned in situ. The thermoelectric response shows sizable anisotropy in the spin density wave (SDW) state for both compounds, while some dissimilarities in the vicinity of the SDW transition can be attributed to the different nature of the phase change in BaF e2A s2 and CaF e2A s2 . Temperature dependences of S and ν can be described within a two-band model that contains a contribution from highly mobile, probably Dirac, electrons. The Dirac band seems to be rather isotropic, whereas most of the anisotropy in the transport phenomena could be attributed to "regular" holelike charge carriers. We also observe that the off-diagonal element of the Peltier tensor αx y is not the same for the a and b orthorhombic axes, which indicates that the widely used Mott formula is not applicable to the SDW state of iron-based superconductors.

The Change of the Seebeck Coefficient Due to Neutron Irradiation and Thermal Fatigue of Nuclear Reactor Pressure Vessel Steel and its Application to the Monitoring of Material Degradation

International Nuclear Information System (INIS)

Niffenegger, M.; Reichlin, K.; Kalkhof, D.

2002-05-01

The monitoring of material degradation, that might be caused by neutron irradiation and thermal fatigue, is an important topic in lifetime extension of nuclear power plants. We therefore investigated the application of the Seebeck effect for determining material degradation of common reactor pressure vessel steel. The Seebeck coefficient (SC) of several irradiated Charpy specimens made from Japanese JRQ-steel were measured. The specimens suffered a fluence from 0 up to 4.5 x 10 19 neutrons per cm 2 with energies higher than 1 MeV. The measured changes of the SC within this range were about 500 nV, increasing continuously in the range under investigation. Some indications of saturation appeared at fluencies larger than 4.55 x 10 19 neutrons per cm 2 . We obtained a linear dependency between the SC and the temperature shift ΔT 41 of the Charpy-Energy- Temperature curve which is widely used to characterize material embrittlement. Similar measurements were performed on specimens made from the widely used austenitic steel X6CrNiTi18-10 (according to DIN 1.4541) that were fatigued by applying a cyclic strain amplitude of 0.28%. For this kind of fatigue the observed change of SC was somewhat smaller than for the irradiated specimens. Further investigations were made to quantify the size of the gage volume in which the thermoelectric power is generated. It appeared that the information gathered from a Thermo Electric Power (TEP) measurement is very local. To overcome this problem we propose a novel TEP-method using a Thermoelectric Scanning Microscope (TSM). We finally conclude that the change of the SC has a potential for monitoring of material degradation due to neutron irradiation and thermal fatigue, but it has to be taken into account that several influencing parameters could contribute to the TEP in either an additional or extinguishing manner. A disadvantage of the method is the requirement of a clean surface without any oxide layer. A part of this disadvantage can

Two-dimensional thermoelectric Seebeck coefficient of SrTiO3-based superlattices

International Nuclear Information System (INIS)

Ohta, Hiromichi

2008-01-01

This review provides the origin of the unusually large thermoelectric Seebeck coefficient vertical stroke S vertical stroke of a two-dimensional electron gas confined within a unit cell layer thickness (∝0.4 nm) of a SrTi 0.8 Nb 0.2 O 3 layer of artificial superlattices of SrTiO 3 /SrTi 0.8 Nb 0.2 O 3 [H. Ohta et al., Nature Mater. 6, 129 (2007)]. The vertical stroke S vertical stroke 2D values of the[(SrTiO 3 ) 17 /(SrTi 0.8 Nb 0.2 O 3 ) y ] 20 superlattice increase proportional to y -0.5 , and reach 290 μV K -1 (y=1) at room temperature, which is ∝5 times larger than that of the SrTi 0.8 Nb 0.2 O 3 bulk (vertical stroke S vertical stroke 3D =61 μVK -1 ), proving that the density of states in the ground state for SrTiO 3 increases in inverse proportion to y. The critical barrier thickness for quantum electron confinement is also clarified to be 6.25 nm (16 unit cells of SrTiO 3 ). Significant structural changes are not observed in the superlattice after annealing at 900 K in a vacuum. The value of vertical stroke S vertical stroke 2D of the superlattice gradually increases with temperature and reaches 450 μVK -1 at 900 K, which is ∝3 times larger than that of bulk SrTi 0.8 Nb 0.2 O 3 . These observations provide clear evidence that the [(SrTiO 3 ) 17 /(SrTi 0.8 Nb 0.2 O 3 ) 1 ] 20 superlattice is stable and exhibits a giant vertical stroke S vertical stroke even at high temperature. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Thermoelectric Effects under Adiabatic Conditions

Directory of Open Access Journals (Sweden)

George Levy

2013-10-01

Full Text Available This paper investigates not fully explained voltage offsets observed by several researchers during the measurement of the Seebeck coefficient of high Z materials. These offsets, traditionally attributed to faulty laboratory procedures, have proven to have an irreducible component that cannot be fully eliminated in spite of careful laboratory procedures. In fact, these offsets are commonly observed and routinely subtracted out of commercially available Seebeck measurement systems. This paper offers a possible explanation based on the spontaneous formation of an adiabatic temperature gradient in the presence of a force field. The diffusion-diffusion heat transport mechanism is formulated and applied to predict two new thermoelectric effects. The first is the existence of a temperature gradient across a potential barrier in a semiconductor and the second is the Onsager reciprocal of the first, that is, the presence of a measureable voltage that arises across a junction when the temperature gradient is forced to zero by a thermal clamp. Suggested future research includes strategies for utilizing the new thermoelectric effects.

Transport Properties of Bulk Thermoelectrics—An International Round-Robin Study, Part I: Seebeck Coefficient and Electrical Resistivity

Science.gov (United States)

Wang, Hsin; Porter, Wallace D.; Böttner, Harald; König, Jan; Chen, Lidong; Bai, Shengqiang; Tritt, Terry M.; Mayolet, Alex; Senawiratne, Jayantha; Smith, Charlene; Harris, Fred; Gilbert, Patricia; Sharp, Jeff W.; Lo, Jason; Kleinke, Holger; Kiss, Laszlo

2013-04-01

Recent research and development of high-temperature thermoelectric materials has demonstrated great potential for converting automobile exhaust heat directly into electricity. Thermoelectrics based on classic bismuth telluride have also started to impact the automotive industry by enhancing air-conditioning efficiency and integrated cabin climate control. In addition to engineering challenges of making reliable and efficient devices to withstand thermal and mechanical cycling, the remaining issues in thermoelectric power generation and refrigeration are mostly materials related. The dimensionless figure of merit, ZT, still needs to be improved from the current value of 1.0 to 1.5 to above 2.0 to be competitive with other alternative technologies. In the meantime, the thermoelectric community could greatly benefit from the development of international test standards, improved test methods, and better characterization tools. Internationally, thermoelectrics have been recognized by many countries as a key component for improving energy efficiency. The International Energy Agency (IEA) group under the Implementing Agreement for Advanced Materials for Transportation (AMT) identified thermoelectric materials as an important area in 2009. This paper is part I of the international round-robin testing of transport properties of bulk thermoelectrics. The main foci in part I are the measurement of two electronic transport properties: Seebeck coefficient and electrical resistivity.

Tuning of the Seebeck Coefficient and the Electrical and Thermal Conductivity of Hybrid Materials Based on Polypyrrole and Bismuth Nanowires.

Science.gov (United States)

Hnida, Katarzyna E; Pilarczyk, Kacper; Knutelski, Marcin; Marzec, Mateusz; Gajewska, Marta; Kosonowski, Artur; Chlebda, Damian; Lis, Bartłomiej; Przybylski, Marek

2018-04-06

The growing demand for clean energy catalyzes the development of new devices capable of generating electricity from renewable energy resources. One of the possible approaches focuses on the use of thermoelectric materials (TE), which may utilize waste heat, water, and solar thermal energy to generate electrical power. An improvement of the performance of such devices may be achieved through the development of composites made of an organic matrix filled with nanostructured thermoelectric materials working in a synergetic way. The first step towards such designs requires a better understanding of the fundamental interactions between available materials. In this paper, this matter is investigated and the questions regarding the change of electrical and thermal properties of nanocomposites based on low-conductive polypyrrole enriched with bismuth nanowires of well-defined geometry and morphology is answered. It is clearly demonstrated that the electrical conductivity and the Seebeck coefficient may be tuned either simultaneously or separately within particular Bi NWs content ranges, and that both parameters may be increased at the same time. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Conditions for enhanced performance of segmented thermoelectrics under load

Science.gov (United States)

Angst, Sebastian; Wolf, Dietrich E.

2017-08-01

The Onsager-de Groot-Callen transport theory is used to investigate the performance of double segmented thermoelectrics as generators. We show that such an inhomogeneous device usually performs worse than predicted by the effective transport coefficients. This is caused by the difference of the open circuit Seebeck voltage and the Seebeck voltage under operating conditions. The electrical current and the related interface Peltier effect cause a self-organization of the temperature profile such that the temperature drop across the material with the higher absolute Seebeck coefficient is reduced. However, including Joule heating we derive conditions for the opposite effect resulting in an enhanced power.

Effect of quantum confinement on thermoelectric properties of vanadium dioxide nanofilms

Energy Technology Data Exchange (ETDEWEB)

Khan, G.R.; Ahmad, Bilal [National Institute of Technology Srinagar, Nanotech Research Lab, Department of Physics, Kashmir (India)

2017-12-15

The quantum confinement effect on thermoelectric properties of pristine vanadium dioxide (VO{sub 2}) nanofilms across semiconductor to metal phase transition (SMT) has been demonstrated by studying VO{sub 2} nanofilms of 15 nm thickness in comparison to microfilms of 290 nm thickness synthesized via inorganic sol-gel method casted on glass substrates by spin coating technique. The ebbing of phase transition temperature in nanofilms across SMT was consistent with the results obtained from resistance-temperature hysteresis contour during SMT dynamics of the nanofilms. The temperature dependent Hall and Seebeck measurements revealed that electrons were the charge carriers in the nanofilms and that the value of charge carrier concentration increased as much as 4 orders of magnitude while going across SMT which stood responsible almost entirely for resistance variations. The decline in carrier mobility and escalation in Seebeck coefficient in the low temperature semiconducting region were splendidly witnessed across SMT. (orig.)

Effects of hydrostatic pressure on the thermoelectric properties of the ɛ-polytype of InSe, GaSe, and InGaSe2 semiconductor compounds: an ab initio study

Science.gov (United States)

Elsayed, H.; Olguín, D.; Cantarero, A.

2017-12-01

This work presents an ab initio study of the effects of hydrostatic pressure on the Seebeck coefficients and thermoelectric power factors of the ɛ-polytype of InSe, GaSe, and InGaSe2 semiconductor compounds. Our study is performed using the semi-classical Boltzmann theory and the rigid band approach. The electronic band structures of these materials are calculated using the full-potential linearized augmented plane-wave method. The obtained thermoelectric properties are discussed in terms of the results of the electronic structure calculations. As we will show, our calculated Seebeck coefficient values indicate that these materials are good alternatives to other well-studied thermoelectric systems.

Colossal enhancement in thermoelectric effect in a laterally coupled double-quantum-dot chain by the Coulomb interactions

International Nuclear Information System (INIS)

Xiong, Lun; Yi, Lin

2014-01-01

Thermoelectric effects, including Seebeck coefficient (S), thermal conductance (κ), and figure of merit (ZT), in a laterally coupled double-quantum-dot (DQD) chain with two external nonmagnetic contacts are investigated theoretically by the nonequilibrium Green's function formalism. In this system, the DQD chain between two contacts forms a main channel for thermal electrons transporting, and each QD in the main chain couples laterally to a dangling one. The numerical calculations show that the Coulomb interactions not only lead to the splitting of the asymmetrical double-peak structure of the Seebeck coefficient, but also make the thermal spectrum show a strong violation of the Wiedemann–Franz law, leading to a colossal enhancement in ZT. These results indicate that the coupled DQD chain has potential applications in the thermoelectric devices with high thermal efficiency.

Seebeck effect of some thin film carbides

International Nuclear Information System (INIS)

Beensh-Marchwicka, G.; Prociow, E.

2002-01-01

Several materials have been investigated for high-temperature thin film thermocouple applications. These include silicon carbide with boron (Si-C-B), ternary composition based on Si-C-Mn, fourfold composition based on Si-C-Zr-B and tantalum carbide (TaC). All materials were deposited on quartz or glass substrates using the pulse sputter deposition technique. Electrical conduction and thermoelectric power were measured for various compositions at 300-550 K. It has been found, that the efficiency of thermoelectric power of films containing Si-C base composition was varied from 0.0015-0.034 μW/cmK 2 . However for TaC the value about 0.093 μW/cmK 2 was obtained. (author)

Anisotropy of the Seebeck Coefficient in the Cuprate Superconductor YBa_{2}Cu_{3}O_{y}: Fermi-Surface Reconstruction by Bidirectional Charge Order

Directory of Open Access Journals (Sweden)

O. Cyr-Choinière

2017-09-01

Full Text Available The Seebeck coefficient S of the cuprate YBa_{2}Cu_{3}O_{y} is measured in magnetic fields large enough to suppress superconductivity, at hole dopings p=0.11 and p=0.12, for heat currents along the a and b directions of the orthorhombic crystal structure. For both directions, S/T decreases and becomes negative at low temperature, a signature that the Fermi surface undergoes a reconstruction due to broken translational symmetry. Above a clear threshold field, a strong new feature appears in S_{b}, for conduction along the b axis only. We attribute this feature to the onset of 3D-coherent unidirectional charge-density-wave modulations seen by x-ray diffraction, also along the b axis only. Because these modulations have a sharp onset temperature well below the temperature where S/T starts to drop towards negative values, we infer that they are not the cause of Fermi-surface reconstruction. Instead, the reconstruction must be caused by the quasi-2D bidirectional modulations that develop at significantly higher temperature. The unidirectional order only confers an additional anisotropy to the already reconstructed Fermi surface, also manifest as an in-plane anisotropy of the resistivity.

Effective suppression of thermoelectric voltage in nonlocal spin-valve measurement

Science.gov (United States)

Ariki, Taisei; Nomura, Tatsuya; Ohnishi, Kohei; Kimura, Takashi

2017-06-01

We demonstrate that the background signal in the nonlocal spin-valve measurement can be sufficiently suppressed by optimizing the electrode design of the lateral spin valve. A relatively long length scale of heat propagation produces spin-independent thermoelectric signals under the combination of the Peltier and Seebeck effects. These unfavorable signals can be reduced by mixing the Peltier effects in two transparent ferromagnetic/nonmagnetic junctions. Proper understanding of the contribution from the heat current in no spin-current area is a key for effective reduction of the spin-independent background signal.

Thermoelectric properties of ZnSb films grown by MOCVD

International Nuclear Information System (INIS)

Venkatasubramanian, R.; Watko, E.; Colpitts, T.

1997-04-01

The thermoelectric properties of metallorganic chemical vapor deposited (MOCVD) ZnSb films are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the growth of thicker ZnSb films lead to improved carrier mobilities and lower free-carrier concentrations. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 to 170 C, with peak Seebeck coefficients as high as 470 microV/K at 220 C. The various growth conditions, including the use of intentional dopants, to improve the Seebeck coefficients at room temperature and above, are discussed. A short annealing of the ZnSb films at temperatures of ∼ 200 C resulted in reduced free-carrier levels and higher Seebeck coefficients at 300 K. Finally, ZT values based on preliminary thermal conductivity measurements using the 3-ω method are reported

Planar Nernst effect and Mott relation in (In,Fe)Sb ferromagnetic semiconductor

Science.gov (United States)

Bui, Cong Tinh; Garcia, Christina A. C.; Tu, Nguyen Thanh; Tanaka, Masaaki; Hai, Pham Nam

2018-05-01

Transverse magneto-thermoelectric effects were studied in an (In,Fe)Sb ferromagnetic semiconductor thin film under an in-plane magnetic field. We find that the thermal voltage is governed by the planar Nernst effect. We show that the magnetic field intensity dependence, magnetic field direction dependence, and temperature dependence of the transverse Seebeck coefficient can be explained by assuming a Mott relation between the in-plane magneto-transport and magneto-thermoelectric phenomena in (In,Fe)Sb.

Synthesis and thermoelectric properties of RuO2 nanorods

International Nuclear Information System (INIS)

Music, Denis; Basse, Felix H.-U.; Schneider, Jochen M.; Hassdorf, Ralf

2010-01-01

We have explored the effect of the O/Ru ratio on the morphology and the Seebeck coefficient of RuO 2 nanorods (space group P4 2 /mnm) synthesized by reactive sputtering. At an O/Ru ratio of 1.69, a faceted surface is observed, while nanorod formation occurs at O/Ru ratios of 2.03 and 2.24. Using classical molecular dynamics with the potential parameters derived in this work, we show that volatile species enable nanorod formation. Based on ab initio calculations, two effects of the nanorod formation on the Seebeck coefficient are observed: (i) increase due to additional states in the vicinity of the Fermi level and (ii) decrease due to oxygen point defects (volatile species). These two competing effects give rise to a moderate increase in the Seebeck coefficient upon nanorod formation.

Thermally driven magnon transport in the magnetic insulator Yttrium Iron Garnet

International Nuclear Information System (INIS)

Agrawal, Milan

2014-01-01

The research work presented in this thesis covers the investigation of spin-caloric phenomena in ferromagnetic-normal metal heterostructures. These phenomena explore the interaction of heat with spin systems and mainly deal with the generation and the manipulation of spin currents by means of heat currents (phonons). The significance of spin currents is widely seen in developing new fundamental concepts of physics as well as in the industry of magnetic memories. Analogous to the classical Seebeck effect, the generation of a spin current in a spin system by the application of heat currents is known as the spin Seebeck effect (SSE). This mode of spin current generation has recently attracted much scientific attention due to the existence of the spin Seebeck effect in a wide variety of magnetic materials (spin systems), considering from insulators to metals. The potential applications of this effect, in particular to generate electricity out of waste heat, make the effect even more attractive. Generally, spin systems can be classified into either a system constituting the traveling spins carried by free electrons or into a system of spin waves, collective excitations of magnetic moments in the wavevector space. Having the advantage of being free from free-electronic charges, an electrical-insulating-ferromagnetic system of spin waves overcomes the limitation of short propagation lengths of pure spin currents in metals. The long propagation length of spin currents carried by propagating spin waves is crucial for building-up spin-electronic (spintronic) circuits and spin logics for fast computation. For such purposes, the ferrimagnetic insulator Yttrium Iron Garnet (YIG) is a promising material candidate due to its lowest known magnetic damping which offers macroscopic propagation lengths of spin currents. In the framework of this thesis, a detailed investigation of the interaction of phonons with magnons, the quanta of spin waves, in single crystalline YIG films are

Ab initio optimization of phonon drag effect for lower-temperature thermoelectric energy conversion

Science.gov (United States)

Zhou, Jiawei; Liao, Bolin; Qiu, Bo; Huberman, Samuel; Esfarjani, Keivan; Dresselhaus, Mildred S.; Chen, Gang

2015-01-01

Although the thermoelectric figure of merit zT above 300 K has seen significant improvement recently, the progress at lower temperatures has been slow, mainly limited by the relatively low Seebeck coefficient and high thermal conductivity. Here we report, for the first time to our knowledge, success in first-principles computation of the phonon drag effect—a coupling phenomenon between electrons and nonequilibrium phonons—in heavily doped region and its optimization to enhance the Seebeck coefficient while reducing the phonon thermal conductivity by nanostructuring. Our simulation quantitatively identifies the major phonons contributing to the phonon drag, which are spectrally distinct from those carrying heat, and further reveals that although the phonon drag is reduced in heavily doped samples, a significant contribution to Seebeck coefficient still exists. An ideal phonon filter is proposed to enhance zT of silicon at room temperature by a factor of 20 to ∼0.25, and the enhancement can reach 70 times at 100 K. This work opens up a new venue toward better thermoelectrics by harnessing nonequilibrium phonons. PMID:26627231

Peltier cooling and onsager reciprocity in ferromagnetic thin films.

Science.gov (United States)

Avery, A D; Zink, B L

2013-09-20

We present direct measurements of the Peltier effect as a function of temperature from 77 to 325 K in Ni, Ni(80)Fe(20), and Fe thin films made using a suspended Si-N membrane structure. Measurement of the Seebeck effect in the same films allows us to directly test predictions of Onsager reciprocity between the Peltier and Seebeck effects. The Peltier coefficient Π is negative for both Ni and Ni(80)Fe(20) films and positive for the Fe film. The Fe film also exhibits a peak associated with the magnon drag Peltier effect. The observation of magnon drag in the Fe film verifies that the coupling between the phonon, magnon, and electron systems in the film is the same whether driven by heat current or charge current. The excellent agreement between Π values predicted using the experimentally determined Seebeck coefficient for these films and measured values offers direct experimental confirmation of the Onsager reciprocity between these thermoelectric effects in ferromagnetic thin films near room temperature.

Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors.

Science.gov (United States)

Talbo, Vincent; Saint-Martin, Jérôme; Retailleau, Sylvie; Dollfus, Philippe

2017-11-01

By means of advanced numerical simulation, the thermoelectric properties of a Si-quantum dot-based single-electron transistor operating in sequential tunneling regime are investigated in terms of figure of merit, efficiency and power. By taking into account the phonon-induced collisional broadening of energy levels in the quantum dot, both heat and electrical currents are computed in a voltage range beyond the linear response. Using our homemade code consisting in a 3D Poisson-Schrödinger solver and the resolution of the Master equation, the Seebeck coefficient at low bias voltage appears to be material independent and nearly independent on the level broadening, which makes this device promising for metrology applications as a nanoscale standard of Seebeck coefficient. Besides, at higher voltage bias, the non-linear characteristics of the heat current are shown to be related to the multi-level effects. Finally, when considering only the electronic contribution to the thermal conductance, the single-electron transistor operating in generator regime is shown to exhibit very good efficiency at maximum power.

Evaluation of irradiation damage effect by applying electric properties based techniques

International Nuclear Information System (INIS)

Acosta, B.; Sevini, F.

2004-01-01

The most important effect of the degradation by radiation is the decrease in the ductility of the pressure vessel of the reactor (RPV) ferritic steels. The main way to determine the mechanical behaviour of the RPV steels is tensile and impact tests, from which the ductile to brittle transition temperature (DBTT) and its increase due to neutron irradiation can be calculated. These tests are destructive and regularly applied to surveillance specimens to assess the integrity of RPV. The possibility of applying validated non-destructive ageing monitoring techniques would however facilitate the surveillance of the materials that form the reactor vessel. The JRC-IE has developed two devices, focused on the measurement of the electrical properties to assess non-destructively the embrittlement state of materials. The first technique, called Seebeck and Thomson Effects on Aged Material (STEAM), is based on the measurement of the Seebeck coefficient, characteristic of the material and related to the microstructural changes induced by irradiation embrittlement. With the same aim the second technique, named Resistivity Effects on Aged Material (REAM), measures instead the resistivity of the material. The purpose of this research is to correlate the results of the impact tests, STEAM and REAM measurements with the change in the mechanical properties due to neutron irradiation. These results will make possible the improvement of such techniques based on the measurement of material electrical properties for their application to the irradiation embrittlement assessment

Anomalous Hall effect from vortex motion in high-Tc superconductors

International Nuclear Information System (INIS)

Chen, J.L.; Yang, T.J.

1994-01-01

In this work, the unusual Seebeck effect is taken into consideration in explaining the possible origin of the anomalous Hall effect for high-T c superconductors. Combining Maki's theory of transport entropy and Tinkham's theory of resistive transition, we explain why the anomalous Hall effect can be observed in high-T c superconductors, but is absent in most conventional superconductors. The behavior of ρ xy (H,T) in our theory is qualitatively consistent with experiments. In addition, our theory not only predicts that ρ xy will become positive from ρ xy xy |∝ρ xx 2 in the region of ρ xy xy will diminish with increasing defect concentration

Laser power meter based on the Peltier effect

International Nuclear Information System (INIS)

Goldschmid, H.J.; Miller, L.A.; Paul, G.L.

1984-01-01

An isothermal power meter, in which the incoming radiation is balanced by thermoelectric cooling, has two substantial advantages: there are no heat losses to the surroundings, and a short response time should result from the smallness of the temperature excursions before balance is achieved. Experiments on prototype devices consisting of thermoelectric modules, made from bismuth telluride alloys, with nominally black-body receivers are reported. Laser powers in the range 100 to 550 mW were measured. In the most favoured arrangement, multijunction modules were used both to provide cooling through the Peltier effect and to detect any temperature excursions through the Seebeck effect. The results justify further work on the system

Special Important Aspects of the Thomson Effect

Science.gov (United States)

Lashkevych, Igor; Velázquez, J. E.; Titov, Oleg Yu.; Gurevich, Yuri G.

2018-03-01

A comprehensive study of the mechanisms of heating and cooling originating from an electrical current in semiconductor devices is reported. The variation in temperature associated with the Peltier effect is not related to the presence of heat sources and sinks if the heat flux is correctly determined. The Thomson effect is commonly regarded as a heat source/sink proportional to the Thomson coefficient, which is added to the Joule heating. In the present work, we will show that this formulation of the Thomson effect is not sufficiently clear. When the heat flux is correctly defined, the Thomson heat source/sink is proportional to the Seebeck coefficient. In the conditions in which the Peltier effect takes place, the temperature gradient is created, and, consequently, the Thomson effect will occur naturally.

Magnon Mode Selective Spin Transport in Compensated Ferrimagnets.

Science.gov (United States)

Cramer, Joel; Guo, Er-Jia; Geprägs, Stephan; Kehlberger, Andreas; Ivanov, Yurii P; Ganzhorn, Kathrin; Della Coletta, Francesco; Althammer, Matthias; Huebl, Hans; Gross, Rudolf; Kosel, Jürgen; Kläui, Mathias; Goennenwein, Sebastian T B

2017-06-14

We investigate the generation of magnonic thermal spin currents and their mode selective spin transport across interfaces in insulating, compensated ferrimagnet/normal metal bilayer systems. The spin Seebeck effect signal exhibits a nonmonotonic temperature dependence with two sign changes of the detected voltage signals. Using different ferrimagnetic garnets, we demonstrate the universality of the observed complex temperature dependence of the spin Seebeck effect. To understand its origin, we systematically vary the interface between the ferrimagnetic garnet and the metallic layer, and by using different metal layers we establish that interface effects play a dominating role. They do not only modify the magnitude of the spin Seebeck effect signal but in particular also alter its temperature dependence. By varying the temperature, we can select the dominating magnon mode and we analyze our results to reveal the mode selective interface transmission probabilities for different magnon modes and interfaces. The comparison of selected systems reveals semiquantitative details of the interfacial coupling depending on the materials involved, supported by the obtained field dependence of the signal.

Magnon Mode Selective Spin Transport in Compensated Ferrimagnets

KAUST Repository

Cramer, Joel

2017-04-13

We investigate the generation of magnonic thermal spin currents and their mode selective spin transport across interfaces in insulating, compensated ferrimagnet/normal metal bilayer systems. The spin Seebeck effect signal exhibits a nonmonotonic temperature dependence with two sign changes of the detected voltage signals. Using different ferrimagnetic garnets, we demonstrate the universality of the observed complex temperature dependence of the spin Seebeck effect. To understand its origin, we systematically vary the interface between the ferrimagnetic garnet and the metallic layer, and by using different metal layers we establish that interface effects play a dominating role. They do not only modify the magnitude of the spin Seebeck effect signal but in particular also alter its temperature dependence. By varying the temperature, we can select the dominating magnon mode and we analyze our results to reveal the mode selective interface transmission probabilities for different magnon modes and interfaces. The comparison of selected systems reveals semiquantitative details of the interfacial coupling depending on the materials involved, supported by the obtained field dependence of the signal.

Magnon Mode Selective Spin Transport in Compensated Ferrimagnets

KAUST Repository

Cramer, Joel; Guo, Er-Jia; Geprä gs, Stephan; Kehlberger, Andreas; Ivanov, Yurii P.; Ganzhorn, Kathrin; Della Coletta, Francesco; Althammer, Matthias; Huebl, Hans; Gross, Rudolf; Kosel, Jü rgen; Klä ui, Mathias; Goennenwein, Sebastian T. B.

2017-01-01

We investigate the generation of magnonic thermal spin currents and their mode selective spin transport across interfaces in insulating, compensated ferrimagnet/normal metal bilayer systems. The spin Seebeck effect signal exhibits a nonmonotonic temperature dependence with two sign changes of the detected voltage signals. Using different ferrimagnetic garnets, we demonstrate the universality of the observed complex temperature dependence of the spin Seebeck effect. To understand its origin, we systematically vary the interface between the ferrimagnetic garnet and the metallic layer, and by using different metal layers we establish that interface effects play a dominating role. They do not only modify the magnitude of the spin Seebeck effect signal but in particular also alter its temperature dependence. By varying the temperature, we can select the dominating magnon mode and we analyze our results to reveal the mode selective interface transmission probabilities for different magnon modes and interfaces. The comparison of selected systems reveals semiquantitative details of the interfacial coupling depending on the materials involved, supported by the obtained field dependence of the signal.

Observation of the spin Peltier effect for magnetic insulators.

Science.gov (United States)

Flipse, J; Dejene, F K; Wagenaar, D; Bauer, G E W; Ben Youssef, J; van Wees, B J

2014-07-11

We report the observation of the spin Peltier effect (SPE) in the ferrimagnetic insulator yttrium iron garnet (YIG), i.e., a heat current generated by a spin current flowing through a platinum (Pt)|YIG interface. The effect can be explained by the spin transfer torque that transforms the spin current in the Pt into a magnon current in the YIG. Via magnon-phonon interactions the magnetic fluctuations modulate the phonon temperature that is detected by a thermopile close to the interface. By finite-element modeling we verify the reciprocity between the spin Peltier and spin Seebeck effect. The observed strong coupling between thermal magnons and phonons in YIG is attractive for nanoscale cooling techniques.

Study of the tungsten bronze Ag0.01WO3 using positron annihilation method

International Nuclear Information System (INIS)

Dryzek, J.; Dryzek, E.; Placzek, A.

1992-01-01

The study of the positron annihilation and the Seebeck effect was performed on silver doped tungsten trioxide of composition Ag 0.01 WO 3 and the tungsten trioxide phase: WO 2.90 (W 20 O 58 ). Both methods point out that there are some clusters of Ag + ions in the first compound and oxygen vacancies in the second case. The clusters have some internal substructure. The measurements of the Seebeck effect showed that Ag 0.01 WO 3 is normal n-type semiconductor whereas WO 2.90 exhibits metal-like properties

Temperature gradient measurements by using thermoelectric effect in CNTs-silicone adhesive composite.

Directory of Open Access Journals (Sweden)

Muhammad Tariq Saeed Chani

Full Text Available This work presents the fabrication and investigation of thermoelectric cells based on composite of carbon nanotubes (CNT and silicone adhesive. The composite contains CNT and silicon adhesive 1∶1 by weight. The current-voltage characteristics and dependences of voltage, current and Seebeck coefficient on the temperature gradient of cell were studied. It was observed that with increase in temperature gradient the open circuit voltage, short circuit current and the Seebeck coefficient of the cells increase. Approximately 7 times increase in temperature gradient increases the open circuit voltage and short circuit current up to 40 and 5 times, respectively. The simulation of experimental results is also carried out; the simulated results are well matched with experimental results.

Effect of high fluence neutron irradiation on transport properties of thermoelectrics

Science.gov (United States)

Wang, H.; Leonard, K. J.

2017-07-01

Thermoelectric materials were subjected to high fluence neutron irradiation in order to understand the effect of radiation damage on transport properties. This study is relevant to the NASA Radioisotope Thermoelectric Generator (RTG) program in which thermoelectric elements are exposed to radiation over a long period of time in space missions. Selected n-type and p-type bismuth telluride materials were irradiated at the High Flux Isotope Reactor with a neutron fluence of 1.3 × 1018 n/cm2 (E > 0.1 MeV). The increase in the Seebeck coefficient in the n-type material was partially off-set by an increase in electrical resistivity, making the power factor higher at lower temperatures. For the p-type materials, although the Seebeck coefficient was not affected by irradiation, electrical resistivity decreased slightly. The figure of merit, zT, showed a clear drop in the 300-400 K range for the p-type material and an increase for the n-type material. Considering that the p-type and n-type materials are connected in series in a module, the overall irradiation damages at the device level were limited. These results, at neutron fluences exceeding a typical space mission, are significant to ensure that the radiation damage to thermoelectrics does not affect the performance of RTGs.

Effect of Ca doping level on the laser-induced voltages in tilted La{sub 1-x}Ca{sub x}MnO{sub 3} (0.1 ≤ x ≤ 0.7) thin films

Energy Technology Data Exchange (ETDEWEB)

Ma, Ji; Zhang, Hui; Chen, Qingming; Liu, Xiang [Kunming University of Science and Technology, Faculty of Materials Science and Engineering, Kunming (China); Theingi, Mya [Kunming University of Science and Technology, Faculty of Materials Science and Engineering, Kunming (China); University of Yangon, Department of Chemistry, Yangon (Myanmar)

2014-03-15

Tilted La{sub 1-x}Ca{sub x}MnO{sub 3} (0.1 ≤ x ≤ 0.7) thin films have been grown on vicinal cut LaAlO{sub 3} (100) substrate by pulsed laser deposition. The laser-induced voltage effect was studied at room temperature with the KrF excimer laser using as the thermal source. The relationships between Ca doping level and voltage signal, response time and anisotropy Seebeck coefficient were established. The voltage signal and anisotropy Seebeck coefficient increase at first with increasing Ca doping level, reach a maximum at the same Ca content around x = 0.5, and then decrease. The respond time decreases with the Ca concentration increasing, and changes very little after x = 0.5. The figure of merit F{sub m} was also the largest at this doping level, indicating a potential good performance of the photodetector devices. The variation of intrinsic structural and transport anisotropy induced by the change of Ca concentration has been proposed to account for the different LIV effects observed in LCMO thin films. (orig.)

Relation of planar Hall and planar Nernst effects in thin film permalloy

Science.gov (United States)

Wesenberg, D.; Hojem, A.; Bennet, R. K.; Zink, B. L.

2018-06-01

We present measurements of the planar Nernst effect (PNE) and the planar Hall effect (PHE) of nickel-iron (Ni–Fe) alloy thin films. We suspend the thin-film samples, measurement leads, and lithographically-defined heaters and thermometers on silicon-nitride membranes to greatly simplify control and measurement of thermal gradients essential to quantitative determination of magnetothermoelectric effects. Since these thermal isolation structures allow measurements of longitudinal thermopower, or the Seebeck coefficient, and four-wire electrical resistivity of the same thin film, we can quantitatively demonstrate the link between the longitudinal and transverse effects as a function of applied in-plane field and angle. Finite element thermal analysis of this essentially 2D structure allows more confident determination of the thermal gradient, which is reduced from the simplest assumptions due to the particular geometry of the membranes, which are more than 350 μm wide in order to maximize sensitivity to transverse thermoelectric effects. The resulting maximum values of the PNE and PHE coefficients for the Ni–Fe film with 80% Ni we study here are and , respectively. All signals are exclusively symmetry with applied field, ruling out long-distance spin transport effects. We also consider a Mott-like relation between the PNE and PHE, and use both this and the standard Mott relation to determine the energy-derivative of the resistivity at the Fermi energy to be , which is very similar to values for films we previously measured using similar thermal platforms. Finally, using an estimated value for the lead contribution to the longitudinal thermopower, we show that the anisotropic magnetoresistance (AMR) ratio in this Ni–Fe film is two times larger than the magnetothermopower ratio, which is the first evidence of a deviation from strict adherence to the Mott relation between Seebeck coefficient and resistivity.

Observation of the spin Nernst effect

Science.gov (United States)

Meyer, S.; Chen, Y.-T.; Wimmer, S.; Althammer, M.; Wimmer, T.; Schlitz, R.; Geprägs, S.; Huebl, H.; Ködderitzsch, D.; Ebert, H.; Bauer, G. E. W.; Gross, R.; Goennenwein, S. T. B.

2017-10-01

The observation of the spin Hall effect triggered intense research on pure spin current transport. With the spin Hall effect, the spin Seebeck effect and the spin Peltier effect already observed, our picture of pure spin current transport is almost complete. The only missing piece is the spin Nernst (-Ettingshausen) effect, which so far has been discussed only on theoretical grounds. Here, we report the observation of the spin Nernst effect. By applying a longitudinal temperature gradient, we generate a pure transverse spin current in a Pt thin film. For readout, we exploit the magnetization-orientation-dependent spin transfer to an adjacent yttrium iron garnet layer, converting the spin Nernst current in Pt into a controlled change of the longitudinal and transverse thermopower voltage. Our experiments show that the spin Nernst and the spin Hall effect in Pt are of comparable magnitude, but differ in sign, as corroborated by first-principles calculations.

Spin caloritronics, origin and outlook

International Nuclear Information System (INIS)

Yu, Haiming; Brechet, Sylvain D.; Ansermet, Jean-Philippe

2017-01-01

Spin caloritronics refers to research efforts in spintronics when a heat current plays a role. In this review, we start out by reviewing the predictions that can be drawn from the thermodynamics of irreversible processes. This serves as a conceptual framework in which to analyze the interplay of charge, spin and heat transport. This formalism predicts tensorial relations between vectorial quantities such as currents and gradients of chemical potentials or of temperature. Transverse effects such as the Nernst or Hall effects are predicted on the basis that these tensors can include an anti-symmetric contribution, which can be written with a vectorial cross-product. The local symmetry of the system may determine the direction of the vector defining such transverse effects, such as the surface of an isotropic medium. By including magnetization as state field in the thermodynamic description, spin currents appear naturally from the continuity equation for the magnetization, and dissipative spin torques are derived, which are charge-driven or heat-driven. Thermodynamics does not give the strength of these effects, but may provide relationships between them. Based on this framework, the review proceeds by showing how these effects have been observed in various systems. Spintronics has become a vast field of research, and the experiments highlighted in this review pertain only to heat effects on transport and magnetization dynamics, such as magneto-thermoelectric power, or the spin-dependence of the Seebeck effect, the spin-dependence of the Peltier effect, the spin Seebeck effect, the magnetic Seebeck effect, or the Nernst effect. The review concludes by pointing out predicted effects that are yet to be verified experimentally, and in what novel materials the standard thermal spin effects could be investigated. - Highlights: • Thermodynamic description of transport: three-current model. • Magneto-thermoelectric power and spin-dependent Peltier effects. • Thermal

Spin caloritronics, origin and outlook

Energy Technology Data Exchange (ETDEWEB)

Yu, Haiming, E-mail: haiming.yu@buaa.edu.cn [Fert Beijing Institute, School of Electronic and Information Engineering, BDBC, Beihang University (China); Brechet, Sylvain D. [Institute of Physics, station 3, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne-EPFL (Switzerland); Ansermet, Jean-Philippe, E-mail: jean-philippe.ansermet@epfl.ch [Institute of Physics, station 3, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne-EPFL (Switzerland)

2017-03-03

Spin caloritronics refers to research efforts in spintronics when a heat current plays a role. In this review, we start out by reviewing the predictions that can be drawn from the thermodynamics of irreversible processes. This serves as a conceptual framework in which to analyze the interplay of charge, spin and heat transport. This formalism predicts tensorial relations between vectorial quantities such as currents and gradients of chemical potentials or of temperature. Transverse effects such as the Nernst or Hall effects are predicted on the basis that these tensors can include an anti-symmetric contribution, which can be written with a vectorial cross-product. The local symmetry of the system may determine the direction of the vector defining such transverse effects, such as the surface of an isotropic medium. By including magnetization as state field in the thermodynamic description, spin currents appear naturally from the continuity equation for the magnetization, and dissipative spin torques are derived, which are charge-driven or heat-driven. Thermodynamics does not give the strength of these effects, but may provide relationships between them. Based on this framework, the review proceeds by showing how these effects have been observed in various systems. Spintronics has become a vast field of research, and the experiments highlighted in this review pertain only to heat effects on transport and magnetization dynamics, such as magneto-thermoelectric power, or the spin-dependence of the Seebeck effect, the spin-dependence of the Peltier effect, the spin Seebeck effect, the magnetic Seebeck effect, or the Nernst effect. The review concludes by pointing out predicted effects that are yet to be verified experimentally, and in what novel materials the standard thermal spin effects could be investigated. - Highlights: • Thermodynamic description of transport: three-current model. • Magneto-thermoelectric power and spin-dependent Peltier effects. • Thermal

Effect of oxygen intercalation on properties of sputtered CuYO 2 for ...

Indian Academy of Sciences (India)

Keywords. Transparent conducting oxide; RF sputtering; -type TCO. ... The positive sign of Seebeck coefficient (+274 VK-1) confirms the -type conductivity of the films. The optical bandgap of CuYO2 ... Bulletin of Materials Science | News.

Thermoelectric properties of ZnSb films grown by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Venkatasubramanian, R; Watko, E; Colpitts, T

1997-07-01

The thermoelectric properties of ZnSb films grown by metallorganic chemical vapor deposition (MOCVD) are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the thicker ZnSb films offer improved carrier mobilities and lower free-carrier concentration levels. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 C. The thicker films, due to the lower doping levels, indicate higher Seebeck coefficients between 25 to 200 C. A short annealing of the ZnSb film at temperatures of {approximately}200 C results in reduced free-carrier level. Thermal conductivity measurements of ZnSb films using the 3-{omega} method are also presented.

High Performance Thermoelectric Materials Using Solution Phase Synthesis of Narrow Bandgap Core/Shell Quantum Dots Deposited Into Colloidal Crystal Thin Films

National Research Council Canada - National Science Library

2005-01-01

Thermoelectrics is the science and technology associated with thermoelectric converters, that is, the generation of electrical power based on the Seebeck effect and refrigeration by the Peltier effect...

Thermoelectric power of small polarons in magnetic semiconductors

International Nuclear Information System (INIS)

Liu, N.H.; Emin, D.

1984-01-01

The thermoelectric power (Seebeck coefficient) α of a small polaron in both ferromagnetic and antiferromagnetic semiconductors and insulators is calculated for the first time. In particular, we obtain the contribution to the Seebeck coefficient arising from exchange interactions between the severely localized carrier (i.e., small polaron) of charge q and the spins of the host lattice. In essence, we study the heat transported along with a carrier. This heat, the Peltier heat, Pi, is related to the Seebeck coefficient by the Kelvin relation: Pi = qTα, where T is the temperature. The heat per carrier is simply the product of the temperature and the change of the entropy of the system when a small polaron is added to it. The magnetic contribution to the Seebeck coefficient is therefore directly related to the change of the magnetic entropy of the system upon introduction of a charge carrier. We explicitly treat the intrasite and intersite exchange interactions between a small polaron and the spins of a spin-1/2 system. These magnetic interactions produce two competing contributions to the Seebeck coefficient. First, adding the carrier tends to provide extra spin freedom (e.g., spin up or spin down of the carrier). This effect augments the entropy of the system, thereby producing a positive contribution to the Peltier heat. Second, however, the additional exchange between the carrier and the sites about it enhances the exchange binding among these sites. This generally reduces the energetically allowable spin configurations. The concomitant reduction of the system's entropy provides a negative contribution to the Peltier heat. At the highest of temperatures, when kT exceeds the intrasite exchange energy, the first effect dominates. Then, the Peltier heat is simply augmented by kT ln2

Enhancement of the spin Peltier effect in multilayers

Science.gov (United States)

Uchida, K.; Iguchi, R.; Daimon, S.; Ramos, R.; Anadón, A.; Lucas, I.; Algarabel, P. A.; Morellón, L.; Aguirre, M. H.; Ibarra, M. R.; Saitoh, E.

2017-05-01

The spin Peltier effect (SPE), heat-current generation as a result of spin-current injection, has been investigated in alternately stacked Pt/Fe3O4 multilayer films. The temperature modulation induced by the SPE in the [Pt/Fe3O4]×n films was found to be significantly enhanced with increasing the number of Pt/Fe3O4 bilayers n . This SPE enhancement is much greater than that expected for a simple stack of independent Pt/Fe3O4 bilayers. The observed n dependence of the SPE can be explained by introducing spin-current redistribution in the multilayer films in the thickness direction, in a manner similar to the enhancement of the spin Seebeck effect in multilayers.

Enhanced thermo-spin effects in iron-oxide/metal multilayers

Science.gov (United States)

Ramos, R.; Lucas, I.; Algarabel, P. A.; Morellón, L.; Uchida, K.; Saitoh, E.; Ibarra, M. R.

2018-06-01

Since the discovery of the spin Seebeck effect (SSE), much attention has been devoted to the study of the interaction between heat, spin, and charge in magnetic systems. The SSE refers to the generation of a spin current upon the application of a thermal gradient and detected by means of the inverse spin Hall effect. Conversely, the spin Peltier effect (SPE) refers to the generation of a heat current as a result of a spin current induced by the spin Hall effect. Here we report a strong enhancement of both the SSE and SPE in Fe3O4/Pt multilayered thin films at room temperature as a result of an increased thermo-spin conversion efficiency in the multilayers. These results open the possibility to design thin film heterostructures that may boost the application of thermal spin currents in spintronics.

Simple experiments with a thermoelectric module

International Nuclear Information System (INIS)

Kraftmakher, Yaakov

2005-01-01

The Seebeck and Peltier effects are explored with a commercially available thermoelectric module and a data-acquisition system. Five topics are presented: (i) thermoelectric heating and cooling, (ii) the Seebeck coefficient, (iii) efficiency of a thermoelectric generator, (iv) the maximum temperature difference provided by a thermoelectric cooler and (v) the Peltier coefficient and the coefficient of performance. Using a data-acquisition system, the measurements are carried out in a reasonably short time. It is shown how to deduce quantities important for the theory and applications of thermoelectric devices

Strain-induced bi-thermoelectricity in tapered carbon nanotubes

Science.gov (United States)

Algharagholy, L. A. A.; Pope, T.; Lambert, C. J.

2018-03-01

We show that carbon-based nanostructured materials are a novel testbed for controlling thermoelectricity and have the potential to underpin the development of new cost-effective environmentally-friendly thermoelectric materials. In single-molecule junctions, it is known that transport resonances associated with the discrete molecular levels play a key role in the thermoelectric performance, but such resonances have not been exploited in carbon nanotubes (CNTs). Here we study junctions formed from tapered CNTs and demonstrate that such structures possess transport resonances near the Fermi level, whose energetic location can be varied by applying strain, resulting in an ability to tune the sign of their Seebeck coefficient. These results reveal that tapered CNTs form a new class of bi-thermoelectric materials, exhibiting both positive and negative thermopower. This ability to change the sign of the Seebeck coefficient allows the thermovoltage in carbon-based thermoelectric devices to be boosted by placing CNTs with alternating-sign Seebeck coefficients in tandem.

Thermoelectric conversion efficiency in IV-VI semiconductors with reduced thermal conductivity

Directory of Open Access Journals (Sweden)

Akihiro Ishida

2015-10-01

Full Text Available Mid-temperature thermoelectric conversion efficiencies of the IV-VI materials were calculated under the Boltzmann transport theory of carriers, taking the Seebeck, Peltier, and Thomson effects into account. The conversion efficiency was discussed with respect to the lattice thermal conductivity, keeping other parameters such as Seebeck coefficient and electrical conductivity to the same values. If room temperature lattice thermal conductivity is decreased up to 0.5W/mK, the conversion efficiency of a PbS based material becomes as high as 15% with the temperature difference of 500K between 800K and 300K.

Convergence of valence bands for high thermoelectric performance for p-type InN

International Nuclear Information System (INIS)

Li, Hai-Zhu; Li, Ruo-Ping; Liu, Jun-Hui; Huang, Ming-Ju

2015-01-01

Band engineering to converge the bands to achieve high valley degeneracy is one of effective approaches for designing ideal thermoelectric materials. Convergence of many valleys in the valence band may lead to a high Seebeck coefficient, and induce promising thermoelectric performance of p-type InN. In the current work, we have systematically investigated the electronic structure and thermoelectric performance of wurtzite InN by using the density functional theory combined with semiclassical Boltzmann transport theory. Form the results, it can be found that intrinsic InN has a large Seebeck coefficient (254 μV/K) and the largest value of Z e T is 0.77. The transport properties of p-type InN are better than that of n-type one at the optimum carrier concentration, which mainly due to the large Seebeck coefficient for p-type InN, although the electrical conductivity of n-type InN is larger than that of p-type one. We found that the larger Seebeck coefficient for p-type InN may originate from the large valley degeneracy in the valence band. Moreover, the low minimum lattice thermal conductivity for InN is one key factor to become a good thermoelectric material. Therefore, p-type InN could be a potential material for further applications in the thermoelectric area.

Effect of ball milling time on thermoelectric properties of bismuth telluride nanomaterials

Science.gov (United States)

Khade, Poonam; Bagwaiya, Toshi; Bhattacharaya, Shovit; Singh, Ajay; Jha, Purushottam; Shelke, Vilas

2018-04-01

The effect of different milling time on thermoelectric properties of bismuth telluride (Bi2Te3) was investigated. The nanomaterial was prepared by varying the ball milling time and followed by hot press sintering. The crystal structure and phase formation were verified by X-ray diffraction and Raman Spectroscopy. The experimental results show that electrical conductivity increases whereas thermal conductivity decreases with increasing milling time. The negative sign of seebeck coefficient indicate the n-type nature with majority charge carriers of electrons. A maximum figure of merit about 0.55 is achieved for l5hr ball milled Bi2Te3 sample. The present study demonstrates the simple and cost-effective method for synthesis of Bi2Te3 thermoelectric material at large scale thermoelectric applications.

Thermoelectric performance and the role of anti-site disorder in the 24-electron Heusler TiFe2Sn

Science.gov (United States)

Buffon, Malinda L. C.; Laurita, Geneva; Lamontagne, Leo; Levin, Emily E.; Mooraj, Shahryar; Lloyd, Demetrious L.; White, Natalie; Pollock, Tresa M.; Seshadri, Ram

2017-10-01

Heusler compounds XY 2 Z with 24 valence electrons per formula unit are potential thermoelectric materials, given their thermal and chemical stability and their relatively earth-abundant constituent elements. We present results on the 24-electron compound TiFe2Sn here. First principles calculations on this compound suggest semiconducting behavior. A relatively flat conduction band that could be associated with a high Seebeck coefficient upon electron doping is found. A series of compounds have been prepared and characterized using a combination of synchrotron x-ray and neutron diffraction studies to understand the effects of site order/disorder phenomena and n-type doping. Samples fabricated by a three step processing approach were subjected to high temperature Seebeck and electrical resistivity measurements. Ti:Fe anti-site disorder is present in the stoichiometric compound and these defects are reduced when starting Ti-rich compositions are employed. Additionally, we investigate control of the Seebeck coefficient through the introduction of carriers through the substitution of Sb on the Sn site in these intrinsically p-type materials.

A note on the electrochemical nature of the thermoelectric power

Science.gov (United States)

Apertet, Y.; Ouerdane, H.; Goupil, C.; Lecoeur, Ph.

2016-04-01

While thermoelectric transport theory is well established and widely applied, it is not always clear in the literature whether the Seebeck coefficient, which is a measure of the strength of the mutual interaction between electric charge transport and heat transport, is to be related to the gradient of the system's chemical potential or to the gradient of its electrochemical potential. The present article aims to clarify the thermodynamic definition of the thermoelectric coupling. First, we recall how the Seebeck coefficient is experimentally determined. We then turn to the analysis of the relationship between the thermoelectric power and the relevant potentials in the thermoelectric system: As the definitions of the chemical and electrochemical potentials are clarified, we show that, with a proper consideration of each potential, one may derive the Seebeck coefficient of a non-degenerate semiconductor without the need to introduce a contact potential as seen sometimes in the literature. Furthermore, we demonstrate that the phenomenological expression of the electrical current resulting from thermoelectric effects may be directly obtained from the drift-diffusion equation.

Thermoelectric performance and the role of anti-site disorder in the 24-electron Heusler TiFe2Sn.

Science.gov (United States)

Buffon, Malinda L C; Laurita, Geneva; Lamontagne, Leo; Levin, Emily E; Mooraj, Shahryar; Lloyd, Demetrious L; White, Natalie; Pollock, Tresa M; Seshadri, Ram

2017-10-11

Heusler compounds XY 2 Z with 24 valence electrons per formula unit are potential thermoelectric materials, given their thermal and chemical stability and their relatively earth-abundant constituent elements. We present results on the 24-electron compound TiFe 2 Sn here. First principles calculations on this compound suggest semiconducting behavior. A relatively flat conduction band that could be associated with a high Seebeck coefficient upon electron doping is found. A series of compounds have been prepared and characterized using a combination of synchrotron x-ray and neutron diffraction studies to understand the effects of site order/disorder phenomena and n-type doping. Samples fabricated by a three step processing approach were subjected to high temperature Seebeck and electrical resistivity measurements. Ti:Fe anti-site disorder is present in the stoichiometric compound and these defects are reduced when starting Ti-rich compositions are employed. Additionally, we investigate control of the Seebeck coefficient through the introduction of carriers through the substitution of Sb on the Sn site in these intrinsically p-type materials.

High thermoelectric figure of merit in nanocrystalline polyaniline at low temperatures

Energy Technology Data Exchange (ETDEWEB)

Nath, Chandrani; Kumar, Ashok, E-mail: ask@tezu.ernet.in, E-mail: okram@csr.res.in [Materials Research Laboratory, Department of Physics, Tezpur University, Tezpur 784 028 (India); Kuo, Yung-Kang [Department of Physics, National Dong-Hwa University, Hualien 974, Taiwan (China); Okram, Gunadhor Singh, E-mail: ask@tezu.ernet.in, E-mail: okram@csr.res.in [Electrical Transport Laboratory, UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452 017 (India)

2014-09-29

Thermoelectric coolers with figure of merit (ZT) close to unity at low temperatures are the need of the hour with new advances in high temperature superconductors, superconducting microelectronic circuits, quantum computers, and photonics. Here, we demonstrate that the conducting polymer polyaniline (Pani) doped with camphor sulfonic acid synthesized in semi-crystalline nanostructures, possesses a giant Seebeck effect at low temperatures. The resulting enormously large Seebeck coefficient (up to 0.6 V/K) combined with an intrinsically low electrical conductivity and thermal conductivity give rise to a ZT = 0.77 at 45 K and ZT = 2.17 at 17 K.

The effect of Cr buffer layer thickness on voltage generation of thin-film thermoelectric modules

International Nuclear Information System (INIS)

Mizoshiri, Mizue; Mikami, Masashi; Ozaki, Kimihiro

2013-01-01

The effect of Cr buffer layer thickness on the open-circuit voltage generated by thin-film thermoelectric modules of Bi 0.5 Sb 1.5 Te 3 (p-type) and Bi 2 Te 2.7 Se 0.3 (n-type) materials was investigated. A Cr buffer layer, whose thickness generally needs to be optimized to improve adhesion depending on the substrate surface condition, such as roughness, was deposited between thermoelectric thin films and glass substrates. When the Cr buffer layer was 1 nm thick, the Seebeck coefficients and electrical conductivity of 1 µm thermoelectric thin films with the buffer layers were approximately equal to those of the thermoelectric films without the buffer layers. When the thickness of the Cr buffer layer was 1 µm, the same as the thermoelectric films, the Seebeck coefficients of the bilayer films were reduced by an electrical current flowing inside the Cr buffer layer and the generation of Cr 2 Te 3 . The open-circuit voltage of the thin-film thermoelectric modules decreased with an increase in the thickness of the Cr buffer layer, which was primarily induced by the electrical current flow. The reduction caused by the Cr 2 Te 3 generation was less than 10% of the total voltage generation of the modules without the Cr buffer layers. The voltage generation of thin-film thermoelectric modules could be controlled by the Cr buffer layer thickness. (paper)

Ambipolar thermoelectric power of chemically-exfoliated RuO2 nanosheets

Science.gov (United States)

Kim, Jeongmin; Yoo, Somi; Moon, Hongjae; Kim, Se Yun; Ko, Dong-Su; Roh, Jong Wook; Lee, Wooyoung

2018-01-01

The electrical conductivity and Seebeck coefficient of RuO2 nanosheets are enhanced by metal nanoparticle doping using Ag-acetate solutions. In this study, RuO2 monolayer and bilayer nanosheets exfoliated from layered alkali metal ruthenates are transferred to Si substrates for device fabrication, and the temperature dependence of their conductivity and Seebeck coefficients is investigated. For pristine RuO2 nanosheets, the sign of the Seebeck coefficient changes with temperature from 350-450 K. This indicates that the dominant type of charge carrier is dependent on the temperature, and the RuO2 nanosheets show ambipolar carrier transport behavior. By contrast, the sign of the Seebeck coefficient for Ag nanoparticle-doped RuO2 nanosheets does not change with temperature, indicating that the extra charge carriers from metal nanoparticles promote n-type semiconductor behavior.

Experimental Test of the Spin Mixing Interface Conductivity Concept

NARCIS (Netherlands)

Weiler, M.; Althammer, M.; Schreier, M.; Lotze, J.; Pernpeintner, M.; Meyer, S.; Huebl, H.; Gross, R.; Kamra, A.; Xiao, J.; Chen, Y.T.; Jiao, H.J.; Bauer, G.E.W.; Goennenwein, S.T.B.

2013-01-01

We perform a quantitative, comparative study of the spin pumping, spin Seebeck, and spin Hall magnetoresistance effects, all detected via the inverse spin Hall effect in a series of over 20??yttrium???iron?garnet/Pt samples. Our experimental results fully support present, exclusively spin

Spin Seebeck effect in a metal-single-molecule-magnet-metal junction

Directory of Open Access Journals (Sweden)

Pengbin Niu

2018-01-01

Full Text Available We investigate the nonlinear regime of temperature-driven spin-related currents through a single molecular magnet (SMM, which is connected with two metal electrodes. Under a large spin approximation, the SMM is simplified to a natural two-channel model possessing spin-opposite configuration and Coulomb interaction. We find that in temperature-driven case the system can generate spin-polarized currents. More interestingly, at electron-hole symmetry point, the competition of the two channels induces a temperature-driven pure spin current. This device demonstrates that temperature-driven SMM junction shows some results different from the usual quantum dot model, which may be useful in the future design of thermal-based molecular spintronic devices.

Spin Seebeck effect in a metal-single-molecule-magnet-metal junction

Science.gov (United States)

Niu, Pengbin; Liu, Lixiang; Su, Xiaoqiang; Dong, Lijuan; Luo, Hong-Gang

2018-01-01

We investigate the nonlinear regime of temperature-driven spin-related currents through a single molecular magnet (SMM), which is connected with two metal electrodes. Under a large spin approximation, the SMM is simplified to a natural two-channel model possessing spin-opposite configuration and Coulomb interaction. We find that in temperature-driven case the system can generate spin-polarized currents. More interestingly, at electron-hole symmetry point, the competition of the two channels induces a temperature-driven pure spin current. This device demonstrates that temperature-driven SMM junction shows some results different from the usual quantum dot model, which may be useful in the future design of thermal-based molecular spintronic devices.

Effect of Sb content on the thermoelectric properties of annealed CoSb_3 thin films deposited via RF co-sputtering

International Nuclear Information System (INIS)

Ahmed, Aziz; Han, Seungwoo

2017-01-01

Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb_3 phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb_2 phase possess the largest power factor. - Abstract: A series of CoSb_3 thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb_3 thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb_2 and CoSb_3 components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb_3 thin films. The CoSb_2 phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb_3 thin films. We report maximum power factor of 7.92 mW/m K"2 for the CoSb_2-containing mixed phase thin film and 1.26 mW/m K"2 for the stoichiometric CoSb_3 thin film.

Magnon Valve Effect between Two Magnetic Insulators

Science.gov (United States)

Wu, H.; Huang, L.; Fang, C.; Yang, B. S.; Wan, C. H.; Yu, G. Q.; Feng, J. F.; Wei, H. X.; Han, X. F.

2018-03-01

The key physics of the spin valve involves spin-polarized conduction electrons propagating between two magnetic layers such that the device conductance is controlled by the relative magnetization orientation of two magnetic layers. Here, we report the effect of a magnon valve which is made of two ferromagnetic insulators (YIG) separated by a nonmagnetic spacer layer (Au). When a thermal gradient is applied perpendicular to the layers, the inverse spin Hall voltage output detected by a Pt bar placed on top of the magnon valve depends on the relative orientation of the magnetization of two YIG layers, indicating the magnon current induced by the spin Seebeck effect at one layer affects the magnon current in the other layer separated by Au. We interpret the magnon valve effect by the angular momentum conversion and propagation between magnons in two YIG layers and conduction electrons in the Au layer. The temperature dependence of the magnon valve ratio shows approximately a power law, supporting the above magnon-electron spin conversion mechanism. This work opens a new class of valve structures beyond the conventional spin valves.

Effect of Sb content on the thermoelectric properties of annealed CoSb{sub 3} thin films deposited via RF co-sputtering

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Aziz, E-mail: aziz_ahmed@ust.ac.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of); Han, Seungwoo, E-mail: swhan@kimm.re.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of)

2017-06-30

Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb{sub 3} phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb{sub 2} phase possess the largest power factor. - Abstract: A series of CoSb{sub 3} thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb{sub 3} thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb{sub 2} and CoSb{sub 3} components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb{sub 3} thin films. The CoSb{sub 2} phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb{sub 3} thin films. We report maximum power factor of 7.92 mW/m K{sup 2} for the CoSb{sub 2}-containing mixed phase thin film and 1

Low thermal conductivity skutterudites

Energy Technology Data Exchange (ETDEWEB)

Fleurial, J P; Caillat, T; Borshchevsky, A

1997-07-01

Recent experimental results on semiconductors with the skutterudite crystal structure show that these materials possess attractive transport properties and have a good potential for achieving ZT values substantially larger than for state-of-the-art thermoelectric materials. Both n-type and p-type conductivity samples have been obtained, using several preparation techniques. Associated with a low hole effective mass, very high carrier mobilities, low electrical resistivities and moderate Seebeck coefficients are obtained in p-type skutterudites. For a comparable doping level, the carrier mobilities of n-type samples are about an order of magnitude lower than the values achieved on p-type samples. However, the much larger electron effective masses and Seebeck coefficients on p-type samples. However, the much larger electron effective masses and Seebeck coefficients make n-type skutterudite promising candidates as well. Unfortunately, the thermal conductivities of the binary skutterudites compounds are too large, particularly at low temperatures, to be useful for thermoelectric applications. Several approaches to the reduction of the lattice thermal conductivity in skutterudites are being pursued: heavy doping, formation of solid solutions and alloys, study of novel ternary and filled skutterudite compounds. All those approaches have already resulted in skutterudite compositions with substantially lower thermal conductivity values in these materials. Recently, superior thermoelectric properties in the moderate to high temperature range were achieved for compositions combining alloying and filling of the skutterudite structure. Experimental results and mechanisms responsible for low thermal conductivity in skutterudites are discussed.

Properties of half-Heusler compounds TaIrGe by using first-principles calculations

Energy Technology Data Exchange (ETDEWEB)

Wei, JunHong [Henan Normal University, College of Physics and Information Engineering, Xinxiang, Henan (China); Henan Institute of Science and Technology, School of Mechanical and Electrical Engineering, Xinxiang, Henan (China); Wang, Guangtao [Henan Normal University, College of Physics and Information Engineering, Xinxiang, Henan (China)

2017-05-15

The electronic structures, optical and thermoelectric properties of ternary half-Heusler compound TaIrGe were investigated by using the first-principles and Boltzmann transport theory. Spin-orbit coupling (SOC) removed the degeneracy of VBM, and then decreased the Seebeck coefficients and power factor. From the compressive to tensile strain, the band gap gradually increases from 0.96 to 1.11 eV, accompanied by the absorption coefficient peak red-shift. The effective mass (m{sup *}{sub DOS}) of VBM and CBM gradually increases from the compressive to tensile strain, which enhances the Seebeck coefficient and power factor. Our results indicate that the electronic structures, optical and thermoelectric properties of TaIrGe can be effectively tuned by the strain and TaIrGe can be used as an important photoelectric and thermoelectric material in the future. (orig.)

Thermoelectric properties of periodic quantum structures in the Wigner-Rode formalism

Science.gov (United States)

Kommini, Adithya; Aksamija, Zlatan

2018-01-01

Improving the thermoelectric Seebeck coefficient, while simultaneously reducing thermal conductivity, is required in order to boost thermoelectric (TE) figure of merit (ZT). A common approach to improve the Seebeck coefficient is electron filtering where ‘cold’ (low energy) electrons are restricted from participating in transport by an energy barrier (Kim and Lundstrom 2011 J. Appl. Phys. 110 034511, Zide et al 2010 J. Appl. Phys. 108 123702). However, the impact of electron tunneling through thin barriers and resonant states on TE properties has been given less attention, despite the widespread use of quantum wells and superlattices (SLs) in TE applications. In our work, we develop a comprehensive transport model using the Wigner-Rode formalism. We include the full electronic bandstructure and all the relevant scattering mechanisms, allowing us to simulate both energy relaxation and quantum effects from periodic potential barriers. We study the impact of barrier shape on TE performance and find that tall, sharp barriers with small period lengths lead to the largest increase in both Seebeck coefficient and conductivity, thus boosting power factor and TE efficiency. Our findings are robust against additional elastic scattering such as atomic-scale roughness at side-walls of SL nanowires.

Augmentation of thermoelectric performance of VO2 thin films irradiated by 200 MeV Ag9+-ions

International Nuclear Information System (INIS)

Khan, G.R.; Kandasami, A.; Bhat, B.A.

2016-01-01

Swift Heavy Ion (SHI) irradiation with 200 MeV Ag 9+ -ion beam at ion fluences of 1E11, 5E11, 1E12, and 5E12 for tuning of electrical transport properties of VO 2 thin films fabricated by so–gel technique on alumina substrates has been demonstrated in the present paper. The point defects created by SHI irradiation modulate metal to insulator phase transition temperature, carrier concentration, carrier mobility, electrical conductivity, and Seebeck coefficient of VO 2 thin films. The structural properties of the films were characterized by XRD and Raman spectroscopy and crystallite size was found to decrease upon irradiation. The atomic force microscopy revealed that the surface roughness of specimens first decreased and then increased with increasing fluence. Both resistance as well as Seebeck coefficient measurements demonstrated that all the samples exhibit metal–insulator phase transition and the transition temperatures decreases with increasing fluence. Hall effect measurements exhibited that carrier concentration increased continuously with increasing fluence which resulted in an increase of electrical conductivity by several orders of magnitude in the insulating phase. Seebeck coefficient in insulating phase remained almost constant in spite of an increase in the electrical conductivity by several orders of magnitude making SHI irradiation an alternative stratagem for augmentation of thermoelectric performance of the materials. The carrier mobility at room temperature decreased up to the beam fluence of 5E11 and then started increasing whereas Seebeck coefficient in metallic state first increased with increasing ion beam fluence up to 5E11 and thereafter decreased. Variation of these electrical transport parameters has been explained in detail. - Highlights: • Thermoelectric properties of VO 2 thin films enhance upon SHI irradiation. • Structural properties show that crystallite size decrease upon SHI irradiation. • Metal–insulator phase

Effects of Lu and Tm Doping on Thermoelectric Properties of Bi2Te3 Compound

Science.gov (United States)

Yaprintsev, Maxim; Lyubushkin, Roman; Soklakova, Oxana; Ivanov, Oleg

2018-02-01

The Bi2Te3, Bi1.9Lu0.1Te3 and Bi1.9Tm0.1Te3 thermoelectrics of n-type conductivity have been prepared by the microwave-solvothermal method and spark plasma sintering. These compounds behave as degenerate semiconductors from room temperature up to temperature T d ≈ 470 K. Within this temperature range the temperature behavior of the specific electrical resistivity is due to the temperature changes of electron mobility determined by acoustic and optical phonon scattering. Above T d, an onset of intrinsic conductivity takes place when electrons and holes are present. At the Lu and Tm doping, the Seebeck coefficient increases, while the specific electrical resistivity and total thermal conductivity decrease within the temperature 290-630 K range. The increase of the electrical resistivity is related to the increase of electron concentration since the Tm and Lu atoms are donor centres in the Bi2Te3 lattice. The increase of the density-of-state effective mass for conduction band can be responsible for the increase of the Seebeck coefficient. The decrease of the total thermal conductivity in doped Bi2Te3 is attributed to point defects like the antisite defects and Lu or Tm atoms substituting for the Bi sites. In addition, reducing the electron thermal conductivity due to forming a narrow impurity (Lu or Tm) band having high and sharp density-of-states near the Fermi level can effectively decrease the total thermal conductivity. The thermoelectric figure-of-merit is enhanced from ˜ 0.4 for undoped Bi2Te3 up to ˜ 0.7 for Bi1.9Tm0.1Te3 and ˜ 0.9 for Bi1.9Lu0.1Te3.

Verification of the Thomson-Onsager reciprocity relation for spin caloritronics

NARCIS (Netherlands)

Dejene, F. K.; Flipse, J.; van Wees, B. J.

2014-01-01

We investigate the Thomson-Onsager relation between the spin-dependent Seebeck and spin-dependent Peltier effect. To maintain identical device and measurement conditions we measure both effects in a single Ni80Fe20/Cu/Ni80Fe20 nanopillar spin valve device subjected to either an electrical or a

Anomalous Pd substitution effects in the thermoelectric oxide NaCo sub 2 sub - sub x Pd sub x O sub 4

CERN Document Server

Kitawaki, R

2002-01-01

We prepared a set of polycrystalline samples of the thermoelectric oxide NaCo sub 2 sub - sub x Pd sub x O sub 4 (x = 0, 0.05, 0.1, and 0.2), and investigated the Pd substitution effects on transport phenomena. The effects are so drastic that just 5-10% Pd ions reduce the resistivity and the Seebeck coefficient to one third of the values for x = 0, and increase the magnitude of the Hall coefficient by three times. A semi-quantitative analysis has revealed that the x = 0.2 sample has much smaller effective mass and carrier concentration than the x = 0.05 sample. This is difficult to explain within a rigid-band picture, and is qualitatively consistent with a strong-correlation picture applied to the Ce-based heavy-fermion systems.

Thermal electric effects and heat generation in polypyrrole coated PET fabrics

OpenAIRE

Avloni, J.; Florio, L.; Henn, A. R.; Sparavigna, A.

2007-01-01

Polypyrrole chemically synthesized on PET gives rise to textiles with a high electric conductivity, suitable for several applications from antistatics to electromagnetic interference shielding devices. Here, we discuss investigations on thermal electric performances of the polypyrrole coated PET in a wide range of temperatures above room temperature. The Seebeck coefficient turns out to be comparable with that of metal thermocouple materials. Since polypyrrole shows extremely low thermal diff...

Electric transport in N-type Fe2O3

NARCIS (Netherlands)

Acket, G.A.; Volger, J.

Resistivity, Seebeck-coefficient, Hall-coefficient and magneto-resistance of n-type single crystal ferric oxide (hematite), containing Sn4+ as an impurity, are reported. The resistivity does not show important anisotropy. The Hall- and magneto-resistance effects are probably related to the parasitic

Observation of the Spin Nernst Effect in Platinum

Science.gov (United States)

Goennenwein, Sebastian

Thermoelectric effects - arising from the interplay between thermal and charge transport phenomena - have been extensively studied and are considered well established. Upon taking into account the spin degree of freedom, however, qualitatively new phenomena arise. A prototype example for these so-called magneto-thermoelectric or spin-caloritronic effects is the spin Seebeck effect, in which a thermal gradient drives a pure spin current. In contrast to their thermoelectric counterparts, not all the spin-caloritronic effects predicted from theory have yet been observed in experiment. One of these `missing' phenomena is the spin Nernst effect, in which a thermal gradient gives rise to a transverse pure spin current. We have observed the spin Nernst effect in yttrium iron garnet/platinum (YIG/Pt) thin film bilayers. Upon applying a thermal gradient within the YIG/Pt bilayer plane, a pure spin current flows in the direction orthogonal to the thermal drive. We detect this spin current as a thermopower voltage, generated via magnetization-orientation dependent spin transfer into the adjacent YIG layer. Our data shows that the spin Nernst and the spin Hall effect in in Pt have different sign, but comparable magnitude, in agreement with first-principles calculations. Financial support via Deutsche Forschungsgemeinschaft Priority Programme SPP 1538 Spin-Caloric Transport is gratefully acknowledged.

Innovative direct energy conversion systems from fusion output thermal power to the electrical one with the use of electronic adiabatic processes of electron fluid in solid conductors

International Nuclear Information System (INIS)

Kondoh, Y.; Kondo, M.; Shimoda, K.; Takahashi, T.; Osuga, K.

2003-07-01

It is shown that with the use of the fusion output and/or environmental thermal energy, innovative open systems for permanent auto-working (PA) direct energy converting (DEC) from the thermal to the electrical (TE) and further to the chemical potential (TEC) energies, abbreviated as PA-TEC-DEC systems, can be used for new auto-working electrical power plants and the plants of the compressible and conveyable hydrogen gas resources at various regions in the whole world. It is analytically shown that the same physical mechanism by free electrons and electrical potential determined by temperature in conductors, which include semiconductors, leads to the Peltier effect and the Seebeck one. It is analytically proved that the energy conservation law is exactly satisfied in a simple form where the net absorbed thermal power is directly transferred to the electrical power and to the chemical power in the PA-TEC-DEC systems. It is analytically and experimentally clarified that the long distance separation between two π type elements of the heat absorption side and the production one of the Peltier effect circuit system or between the higher temperature side and the lower one of the Seebeck effect circuit one does not change mechanisms of the heat pumping by the Peltier effect and of the TE-DEC by the Seebeck effect. The proposed systems gives us freedom of no using the fossil fuel, such as coals, oils, and natural gases that yield serious greenhouse effect all over the earth, and the plant of nuclear fissions that left radiating wastes, i.e., no more environmental pollutions. The PA-TEC-DEC systems can be applicable for several km scale systems to the micro ones, such as the plants of the electrical power and the hydrogen gas resources, compact transportable hydrogen gas producers, the refrigerators, the air conditions, home electrical apparatuses, and further the computer elements. (author)

Nonlocal magnon spin transport in NiFe2O4 thin films

NARCIS (Netherlands)

Shan, Juan; Bougiatioti, P; Liang, Lei; Reiss, G; Kuschel, Timo; van Wees, Bart

2017-01-01

We report magnon spin transport in nickel ferrite(NiFe2O4, NFO)/platinum (Pt) bilayer systems at room temperature. A nonlocal geometry is employed, where the magnons are excited by the spin Hall effect or by the Joule heating induced spin Seebeck effect at the Pt injector and detected at a certain

CONVERTER SOLAR RADIATION INTO ELECTRICITY TO SUPPLY THE AUTOMOTIVE SEMICONDUCTOR THERMOELECTRIC AIR CONDITIONING

Directory of Open Access Journals (Sweden)

T. A. Ismailov

2015-01-01

Full Text Available The article considers the possibility to increase the efficiency of converters of solar radiation into electricity by combining constructive photoelectric effect, See-beck thermoeffect and semiconductor solar cells, which will create integrated device to provide power semiconductor thermoelectric automobile air conditioner. 

Quantum nernst effect in a bismuth single crystal

International Nuclear Information System (INIS)

Matsuo, M.; Endo, A.; Hatano, N.; Nakamura, H.; Shirasaki, R.; Sugihara, K.

2009-07-01

We calculate the phonon-drag contribution to the transverse (Nernst) thermoelectric power S yx in a bismuth single crystal subjected to a quantizing magnetic field. The calculated heights of the Nernst peaks originating from the hole Landau levels and their temperature dependence reproduce the right order of magnitude for those of the pronounced magneto-oscillations recently reported by Behnia et al. A striking experimental finding that S yx is much larger than the longitudinal (Seebeck) thermoelectric power S xx can be naturally explained as the effect of the phonon drag, combined with the well-known relation between the longitudinal and the Hall resistivity ρ xx >> |ρ yx | in a semi-metal bismuth. The calculation that includes the contribution of both holes and electrons suggests that some of the hitherto unexplained minor peaks located roughly at the fractional filling of the hole Landau levels are attributable to the electron Landau levels. (author)

Investigation of transverse Peltier effect on top-seeded melt textureYBa2Cu3O7-δ

International Nuclear Information System (INIS)

He, Z.H.; Ma, Z.G.; Li, Q.Y.; Luo, Y.Y.; Zhang, J.X.; Meng, R.L.; Chu, C.W.

1996-01-01

The transverse Peltier effect is investigated on the top-seeded melt texture superconductor YBa 2 Cu 3 O 7-δ (YBCO). By restricting the heat absorbing or evolving on one of the sample close-quote s surfaces, the Peltier heat flow is converted into a temperature difference for measurement. The temperature difference is found proportional to the current applied, which is in accordance with the prediction of transverse Peltier effect. Based on a simplified model, the difference of the Seebeck coefficients between the ab plane and the c axis, |S ab -S c |, is about 35 μV/K. It is in good agreement with that of large single crystal [I. Terasaki, Y. Sato, S. Tajima, S. Miyamoto, and S. Tanaka, Physica C 235-240, 1413 (1994)]. The transverse Peltier effect is verified. This supports the idea that the off-diagonal thermoelectric effect is responsible for the anomalously high laser-induced transient transverse voltage on the oriented YBCO superconducting thin films. copyright 1996 American Institute of Physics

Electronic and Transport Properties of LaNi4Sb12 Skutterudite: Modified Becke-Johnson Approach

Science.gov (United States)

Bhat, Tahir Mohiuddin; Singh, Srishti; Gupta, Dinesh C.

2018-05-01

We carried out an ab initio study of structural, electronic, thermodynamic, and thermoelectric properties of the lanthanum-filled skutterudite, LaNi4Sb12. Generalized gradient approximation and modified Becke-Johnson potentials were employed for the exchange-correlation potential. The electronic structure calculations display the metallic behavior of the compound. The alloy offers low lattice thermal conductivity along with a high Seebeck coefficient with a value of - 158 (μVK-1) at room temperature. The effect of high pressure and temperature on thermal properties like thermal expansion coefficient, heat capacity, and Grüneisen parameter are also investigated by means of a quasi-harmonic Debye model. The large Seebeck coefficient and high power factor exhibited by LaNi4Sb12 make it an attractive candidate for thermoelectric materials.

Quasi-two-dimensional thermoelectricity in SnSe

Science.gov (United States)

Tayari, V.; Senkovskiy, B. V.; Rybkovskiy, D.; Ehlen, N.; Fedorov, A.; Chen, C.-Y.; Avila, J.; Asensio, M.; Perucchi, A.; di Pietro, P.; Yashina, L.; Fakih, I.; Hemsworth, N.; Petrescu, M.; Gervais, G.; Grüneis, A.; Szkopek, T.

2018-01-01

Stannous selenide is a layered semiconductor that is a polar analog of black phosphorus and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle-resolved photoemission spectroscopy, optical reflection spectroscopy, and magnetotransport measurements reveal a multiple-valley valence-band structure and a quasi-two-dimensional dispersion, realizing a Hicks-Dresselhaus thermoelectric contributing to the high Seebeck coefficient at high carrier density. We further demonstrate that the hole accumulation layer in exfoliated SnSe transistors exhibits a field effect mobility of up to 250 cm2/V s at T =1.3 K . SnSe is thus found to be a high-quality quasi-two-dimensional semiconductor ideal for thermoelectric applications.

Thermoelectric characteristics of Pt-silicide/silicon multi-layer structured p-type silicon

International Nuclear Information System (INIS)

Choi, Wonchul; Jun, Dongseok; Kim, Soojung; Shin, Mincheol; Jang, Moongyu

2015-01-01

Electric and thermoelectric properties of silicide/silicon multi-layer structured devices were investigated with the variation of silicide/silicon heterojunction numbers from 3 to 12 layers. For the fabrication of silicide/silicon multi-layered structure, platinum and silicon layers are repeatedly sputtered on the (100) silicon bulk substrate and rapid thermal annealing is carried out for the silicidation. The manufactured devices show ohmic current–voltage (I–V) characteristics. The Seebeck coefficient of bulk Si is evaluated as 195.8 ± 15.3 μV/K at 300 K, whereas the 12 layered silicide/silicon multi-layer structured device is evaluated as 201.8 ± 9.1 μV/K. As the temperature increases to 400 K, the Seebeck coefficient increases to 237.2 ± 4.7 μV/K and 277.0 ± 1.1 μV/K for bulk and 12 layered devices, respectively. The increase of Seebeck coefficient in multi-layered structure is mainly attributed to the electron filtering effect due to the Schottky barrier at Pt-silicide/silicon interface. At 400 K, the thermal conductivity is reduced by about half of magnitude compared to bulk in multi-layered device which shows the efficient suppression of phonon propagation by using Pt-silicide/silicon hetero-junctions. - Highlights: • Silicide/silicon multi-layer structured is proposed for thermoelectric devices. • Electric and thermoelectric properties with the number of layer are investigated. • An increase of Seebeck coefficient is mainly attributed the Schottky barrier. • Phonon propagation is suppressed with the existence of Schottky barrier. • Thermal conductivity is reduced due to the suppression of phonon propagation

Thermoelectric transport properties of high mobility organic semiconductors

Science.gov (United States)

Venkateshvaran, Deepak; Broch, Katharina; Warwick, Chris N.; Sirringhaus, Henning

2016-09-01

Transport in organic semiconductors has traditionally been investigated using measurements of the temperature and gate voltage dependent mobility of charge carriers within the channel of organic field-effect transistors (OFETs). In such measurements, the behavior of charge carrier mobility with temperature and gate voltage, studied together with carrier activation energies, provide a metric to quantify the extent of disorder within these van der Waals bonded materials. In addition to the mobility and activation energy, another potent but often-overlooked transport coefficient useful in understanding disorder is the Seebeck coefficient (also known as thermoelectric power). Fundamentally, the Seebeck coefficient represents the entropy per charge carrier in the solid state, and thus proves powerful in distinguishing materials in which charge carriers move freely from those where a high degree of disorder causes the induced carriers to remain trapped. This paper briefly covers the recent highlights in the field of organic thermoelectrics, showing how significant strides have been made both from an applied standpoint as well as from a viewpoint of fundamental thermoelectric transport physics. It shall be illustrated how thermoelectric transport parameters in organic semiconductors can be tuned over a significant range, and how this tunability facilitates an enhanced performance for heat-to-electricity conversion as well as quantifies energetic disorder and the nature of the density of states (DOS). The work of the authors shall be spotlighted in this context, illustrating how Seebeck coefficient measurements in the polymer indacenodithiophene-co-benzothiadiazole (IDTBT) known for its ultra-low degree of torsion within the polymer backbone, has a trend consistent with low disorder. 1 Finally, using examples of the small molecules C8-BTBT and C10-DNTT, it shall be discussed how the Seebeck coefficient can aid the estimation of the density and distribution of trap states

Transverse peltier effect in Pb-Bi{sub 2}Te{sub 3} multilayer structures

Energy Technology Data Exchange (ETDEWEB)

Reitmaier, Christina; Walther, Franziska; Kyarad, Amir; Lengfellner, Hans [University of Regensburg (Germany)

2009-07-01

Metal-semiconductor multilayer structures show, according to model calculations, large anisotropy in their electrical and thermal transport properties. Multilayer stacks consisting of alternating layers of Pb and n-type Bi{sub 2}Te{sub 3} and prepared by a heating procedure displayed large thermoelectric anisotropy up to {delta}S{approx}200 {mu} V/K, depending on the thickness ratio p=d{sub BiTe}/d{sub Pb}, where d{sub BiTe} and d{sub Pb} are the thicknesses of Bi{sub 2}Te{sub 3} and Pb layers, respectively. From multilayer stacks, tilted samples with layers inclined with respect to the sample surface where obtained by cutting stacks obliquely to the stack axis. Non-zero off-diagonal elements in the Seebeck-tensor describing the thermopower of tilted samples allow for the occurance of a transverse Peltier effect. Experimental results demonstrate cooling by the transverse Peltier effect and are compared to model calculations.

Uncertainty Analysis of Seebeck Coefficient and Electrical Resistivity Characterization

Science.gov (United States)

Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

2014-01-01

In order to provide a complete description of a materials thermoelectric power factor, in addition to the measured nominal value, an uncertainty interval is required. The uncertainty may contain sources of measurement error including systematic bias error and precision error of a statistical nature. The work focuses specifically on the popular ZEM-3 (Ulvac Technologies) measurement system, but the methods apply to any measurement system. The analysis accounts for sources of systematic error including sample preparation tolerance, measurement probe placement, thermocouple cold-finger effect, and measurement parameters; in addition to including uncertainty of a statistical nature. Complete uncertainty analysis of a measurement system allows for more reliable comparison of measurement data between laboratories.

Thermal spin filtering effect and giant magnetoresistance of half-metallic graphene nanoribbon co-doped with non-metallic Nitrogen and Boron

Science.gov (United States)

Huang, Hai; Zheng, Anmin; Gao, Guoying; Yao, Kailun

2018-03-01

Ab initio calculations based on density functional theory and non-equilibrium Green's function are performed to investigate the thermal spin transport properties of single-hydrogen-saturated zigzag graphene nanoribbon co-doped with non-metallic Nitrogen and Boron in parallel and anti-parallel spin configurations. The results show that the doped graphene nanoribbon is a full half-metal. The two-probe system based on the doped graphene nanoribbon exhibits various excellent spin transport properties, including the spin-filtering effect, the spin Seebeck effect, the single-spin negative differential thermal resistance effect and the sign-reversible giant magnetoresistance feature. Excellently, the spin-filtering efficiency can reach nearly 100% in the parallel configuration and the magnetoresistance ratio can be up to -1.5 × 1010% by modulating the electrode temperature and temperature gradient. Our findings indicate that the metal-free doped graphene nanoribbon would be a promising candidate for spin caloritronic applications.

Silver as a highly effective bonding layer for lead telluride thermoelectric modules assembled by rapid hot-pressing

International Nuclear Information System (INIS)

Li, C.C.; Drymiotis, F.; Liao, L.L.; Dai, M.J.; Liu, C.K.; Chen, C.L.; Chen, Y.Y.; Kao, C.R.; Snyder, G.J.

2015-01-01

Highlights: • Ag serves as a promising bonding material for PbTe operating at T Hot ⩽ 400 °C. • The Ag foils reacted vigorously with PbTe to form Ag 2 Te at 550 °C. • The Seebeck coefficient of Ag/PbTe/Ag is slightly higher than that of pure PbTe. • A cost-effective way for long-term operations at high temperature. - Abstract: We use the rapid hot-pressing method to bond Ag foil onto pure PbTe in order to assess its effectiveness as a bonding layer material for thermoelectric module applications. Scanning electron microscopy and X-ray diffraction are employed to examine intermetallic compound formation and microstructure evolution during isothermal aging at 400 °C and 550 °C. We find that Ag is a promising bonding material for PbTe modules operating at T Hot ⩽ 400 °C. Additionally, our approach highlights a highly effective and inexpensive method to metallize PbTe prior to module assembly

Effect of on-site Coulomb interaction on electronic and transport properties of 100% spin polarized CoMnVAs

Energy Technology Data Exchange (ETDEWEB)

Bhat, Tahir Mohiuddin; Gupta, Dinesh C., E-mail: sosfizix@gmail.com

2017-08-01

Highlights: • 100% spin-polarized material important for the application in spintronics. • Ferromagnetic nature. • Ductile in nature for mechanical applications. • Semiconducting behavior with a band gap of 0.55 eV in minority spin channel. • Possibly efficient thermoelectric material. - Abstract: The structural, electronic, magnetic and transport properties of a new quaternary Heusler alloy CoMnVAs have been investigated by employing generalized gradient approximation (GGA), modified Becke-Johnson (mBJ) and GGA with Hubbard U correction (GGA + U). The alloy is energetically more stable in ferromagnetic Y{sub 1} type structure. Elastic parameters reveal high anisotropy and ductile nature of the material. CoMnVAs shows half-metallic ferromagnet character with 100% spin polarization at Fermi level with band gap of 0.55 eV in the minority spin state. The alloy also possesses high electrical conductivity and Seebeck coefficients with 15 μVK{sup −1} at room temperature, achieving a figure of merit of 0.65 at high temperatures. The high degree of ductility, 100% spin polarization and large Seebeck coefficient, makes it an attractive candidate to be used in spin voltage generators and thermoelectric materials.

Tanzania.

African Journals Online (AJOL)

variation (Seebeck, 1973: Mackinnon-e't ar: 1990): Majority of paststlidies"on' reproductive performance from' tropicar-are'as have been' largely limited to'the assessment of effects of>. ·no'n.,genetk factors and breed difference's : '(Galiila. and Arthur, 1989), Genetic parameter es-, timates and infonnation. on the'extent of ...

Charge transport in amorphous InGaZnO thin-film transistors

NARCIS (Netherlands)

Germs, W.C.; Adriaans, W.H.; Tripathi, A.K.; Roelofs, W.S.C.; Cobb, B.; Janssen, R.A.J.; Gelinck, G.H.; Kemerink, M.

2012-01-01

We investigate the mechanism of charge transport in indium gallium zinc oxide (a-IGZO), an amorphous metal-oxide semiconductor. We measured the field-effect mobility and the Seebeck coefficient (S=ΔV/ΔT) of a-IGZO in thin-film transistors as a function of charge-carrier density for different

Charge transport in amorphous InGaZnO thin film transistors

NARCIS (Netherlands)

Germs, W.C.; Adriaans, W.H.; Tripathi, A.K.; Roelofs, W.S.C.; Cobb, B.; Janssen, R.A.J.; Gelinck, G.H.; Kemerink, M.

2012-01-01

We investigate the mechanism of charge transport in indium gallium zinc oxide (a-IGZO), an amorphous metal-oxide semiconductor. We measured the field-effect mobility and the Seebeck coefficient (S=¿V/¿T) of a-IGZO in thin-film transistors as a function of charge-carrier density for different

Synthesis, electronic transport and optical properties of Si:α-Fe2O3 single crystals

NARCIS (Netherlands)

Rettie, A.J.E.; Chemelewski, W.D.; Wygant, B.R.; Lindemuth, J.; Lin, J.F.; Eisenberg, D.; Brauer, C.S.; Johnson, T.J.; Beiswenger, T.N.; Ash, R.D.; Li, X.; Zhou, J.; Mullins, C.B.

2016-01-01

We report the synthesis of silicon-doped hematite (Si:alpha-Fe2O3) single crystals via chemical vapor transport, with Si incorporation on the order of 1019 cm(-3). The conductivity, Seebeck and Hall effect were measured in the basal plane between 200 and 400 K. Distinct differences in electron

Effects of Yttrium and Iron co-doping on the high temperature thermoelectric properties of Ca{sub 3}Co{sub 4}O{sub 9+δ}

Energy Technology Data Exchange (ETDEWEB)

Wu, NingYu, E-mail: niwu@dtu.dk; Van Nong, Ngo; Pryds, Nini; Linderoth, Søren

2015-07-25

Highlights: • The Fe and Fe/Y doping at the Co- and Ca-sites of Ca{sub 3}Co{sub 4}O{sub 9+δ} were investigated. • The rising ρ by Y doping can be mitigated by the coupled Fe doping. • The increased Seebeck coefficient by Y doping can be maintained in co-doped system. • The co-doped system leads to an improvement of the thermoelectric performance. • The co-doped system may preserve the merits from each component doping. - Abstract: A series of Y and Fe co-doped Ca{sub 3−x}Y{sub x}Co{sub 4−y}Fe{sub y}O{sub 9+δ} (0 ⩽ x ⩽ 0.3, 0 ⩽ y ⩽ 0.1) samples synthesized by auto-combustion reaction and followed by a spark plasma sintering (SPS) processing with the effects of Fe and Y doping on the high temperature (RT to 800 °C) thermoelectric properties were systematically investigated. For the Fe-doped system (x = 0, y ⩽ 0.1), the electrical resistivity (ρ) decreased over the whole measured temperature range, while the Seebeck coefficient (S) remained almost the same. For the co-doped system, at any fixed Fe doping content, both ρ and S tended to increase with increasing Y dopants, however, the effect is more substantial on ρ than on S, particularly in the low temperature regime. In contrast to ρ and S, the in-plane thermal conductivity (κ) is only slightly influenced by Y and Fe substitutions. Among all the investigated samples, the co-doped sample with x = 0.1 and y = 0.03 showed a decrease of ρ, enhanced power factor over the measured temperature range, and improved ZT at 800 °C as compared to un-doped Ca{sub 3}Co{sub 4}O{sub 9+δ}.

57Fe Moessbauer effect studies of magnetic ordering in Lasub(1-x) Srsub(x)CoO3

International Nuclear Information System (INIS)

Bhide, V.G.; Rajoria, D.S.

1975-01-01

A detailed investigation of the Lasub(1-x)Srsub(x)CoO 3 system was performed for the entire range of Sr concentrations using X-ray diffraction for structural studies, DTA for phase transition analysis, Moessbauer and magnetic susceptibility studies for magnetic properties, and electrical resistivity and Seebeck coefficient studies for electron transport properties. Among other interesting results, samples with x > 0.125 were found to show ferromagnetic ordering. (A.K.)

High thermoelectric figure of merit by resonant dopant in half-Heusler alloys

Science.gov (United States)

Chen, Long; Liu, Yamei; He, Jian; Tritt, Terry M.; Poon, S. Joseph

2017-06-01

Half-Heusler alloys have been one of the benchmark high temperature thermoelectric materials owing to their thermal stability and promising figure of merit ZT. Simonson et al. early showed that small amounts of vanadium doped in Hf0.75Zr0.25NiSn enhanced the Seebeck coefficient and correlated the change with the increased density of states near the Fermi level. We herein report a systematic study on the role of vanadium (V), niobium (Nb), and tantalum (Ta) as prospective resonant dopants in enhancing the ZT of n-type half-Heusler alloys based on Hf0.6Zr0.4NiSn0.995Sb0.005. The V doping was found to increase the Seebeck coefficient in the temperature range 300-1000 K, consistent with a resonant doping scheme. In contrast, Nb and Ta act as normal n-type dopants, as evident by the systematic decrease in electrical resistivity and Seebeck coefficient. The combination of enhanced Seebeck coefficient due to the presence of V resonant states and the reduced thermal conductivity has led to a state-of-the-art ZT of 1.3 near 850 K in n-type (Hf0.6Zr0.4)0.99V0.01NiSn0.995Sb0.005 alloys.

Amorphous-crystalline transition in thermoelectric NbO2

International Nuclear Information System (INIS)

Music, Denis; Chen, Yen-Ting; Bliem, Pascal; Geyer, Richard W

2015-01-01

Density functional theory was employed to design enhanced amorphous NbO 2 thermoelectrics. The covalent-ionic nature of Nb–O bonding is identical in amorphous NbO 2 and its crystalline counterpart. However, the Anderson localisation occurs in amorphous NbO 2 , which may affect the transport properties. We calculate a multifold increase in the absolute Seebeck coefficient for the amorphous state. These predictions were critically appraised by measuring the Seebeck coefficient of sputtered amorphous and crystalline NbO 2 thin films with the identical short-range order. The first-order phase transition occurs at approximately 550 °C, but amorphous NbO 2 possesses enhanced transport properties at all temperatures. Amorphous NbO 2 , reaching  −173 μV K −1 , exhibits up to a 29% larger absolute Seebeck coefficient value, thereby validating the predictions. (paper)

Magnetic-field-induced decrease of the spin Peltier effect in Pt/Y3Fe5O12 system at room temperature

Science.gov (United States)

Itoh, Ryuichi; Iguchi, Ryo; Daimon, Shunsuke; Oyanagi, Koichi; Uchida, Ken-ichi; Saitoh, Eiji

2017-11-01

We report the observation of magnetic-field-induced decrease of the spin Peltier effect (SPE) in a junction of a paramagnetic metal Pt and a ferrimagnetic insulator Y3Fe5O12 (YIG) at room temperature. For driving the SPE, spin currents are generated via the spin Hall effect from applied charge currents in the Pt layer, and injected into the adjacent thick YIG film. The resultant temperature modulation is detected by a commonly used thermocouple attached to the Pt/YIG junction. The output of the thermocouple shows sign reversal when the magnetization is reversed and linearly increases with the applied current, demonstrating the detection of the SPE signal. We found that the SPE signal decreases with the magnetic field. The observed decreasing rate was found to be comparable to that of the spin Seebeck effect (SSE), suggesting the dominant and similar contribution of the low-energy magnons in the SPE as in the SSE.

Effects of Li and Na intercalation on electronic, bonding and thermoelectric transport properties of MX{sub 2} (M = Ta; X = S or Se) dichalcogenides – Ab initio investigation

Energy Technology Data Exchange (ETDEWEB)

Meziane, Souheyr; Feraoun, Houda [Unité de Recherche Matériaux et Energies Renouvelables – URMER, Université de Tlemcen (Algeria); Ouahrani, Tarik [Laboratoire de Physique Théorique, Ecole Préparatoire en Sciences et Techniques, B.P. 230, 13000 Tlemcen (Algeria); Esling, Claude, E-mail: claude.esling@univ-lorraine.fr [Laboratoire d’Etude des Microstructures et de Mécanique des Matériaux, LEM3 UMR CNRS 7239, Université de Lorraine UL, Metz 57045 (France); Laboratoire d’Excellence “DAMAS”: Design of Metal Alloys for low-mAss Structures, Université de Lorraine – Metz, Ile du Saulcy, 57045 Metz Cedex 01 (France)

2013-12-25

Highlights: •Topological method is used to analyze the chemical bonding in Li(Na)TaX{sub 2} dichalcogenide compounds. •For the first time, Seebeck coefficient, electrical resistivity and thermal conductivity were estimated. •The best figure of merit is established for 2H-LiTaS{sub 2}. •Some new thermoelectric compounds are found. -- Abstract: Using the pseudo-potential method and semi-classical Boltzmann theory, electronic, chemical bonding and thermoelectric transport properties of sample and Li or Na intercalated Ta(S, Se){sub 2} dichalcogenides have been reported. The chemical bonding is studied using the Quantum Theory of Atoms in Molecules (QTAIM). Then, the Seebeck coefficient, electrical resistivity, electrical conductivity, thermal conductivity and figure of merit have been calculated in the temperature range 100–700 K. It was shown that the thermoelectric transport properties strongly depend on the Alkali metals doping and the two main structures 1T- or 2H- as well as the temperature. 2H-LiTaS{sub 2} have been selected as the best candidate for thermoelectrical applications with zT = 1.1.

High-temperature resistivity and thermoelectric properties of coupled substituted Ca3Co2O6

Directory of Open Access Journals (Sweden)

Meenakshisundaram Senthilkumar and Rajagopalan Vijayaraghavan

2009-01-01

Full Text Available Polycrystalline samples of Ca3−xNaxCo2−xMnxO6 (x=0.0–0.5 have been prepared by the sol-gel cum combustion method using sucrose in order to investigate the effects of the coupled substitution of Na and Mn on Ca and Co sites on the transport properties of Ca3Co2O6(Co326. The products were characterized by Fourier transform infrared spectroscopy, powder x-ray diffraction (XRD, thermogravimetry (TGA, differential thermal analysis and scanning electron microscopy. XRD patterns reveal the formation of single-phase products up to x=0.5. Coupled substitution increases the solubility of both Na and Mn on Ca and Co sites, respectively, in contrast to the limited solubility of Na and Mn (x=0.2 when separately substituted. TGA confirms the formation of the Ca3Co2O6 phase at temperatures ~720 °C. The grain size of the parent and substituted products is in the range 150–250 nm. Electrical resistivity and Seebeck coefficient were measured in the temperature range 300–800 K. Resistivity shows semiconducting behavior for all the compositions, particularly in the low-temperature regime. The Seebeck coefficient increases with temperature throughout the measured temperature range for all compositions. The maximum Seebeck coefficient (200 μV K−1 is observed for x=0.5 at 825 K, and this composition may be optimal for high-temperature thermoelectric applications.

Influence of electron beam irradiation on electrical, structural, magnetic and thermal properties of Pr{sub 0.8}Sr{sub 0.2}MnO{sub 3} manganites

Energy Technology Data Exchange (ETDEWEB)

Christopher, Benedict [Department of Physics, Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Rao, Ashok, E-mail: ashokanu_rao@rediffmail.com [Department of Physics, Manipal Institute of Technology, Manipal University, Manipal 576104 (India); Petwal, Vikash Chandra; Verma, Vijay Pal; Dwivedi, Jishnu [Industrial Accelerator Section, PSIAD, Raja Ramanna Centre for Advanced Technology, Indore 452012, M.P. (India); Lin, W.J. [Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China); Kuo, Y.-K., E-mail: ykkuo@mail.ndhu.edu.tw [Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China)

2016-12-01

In this communication, the effect of electron beam (EB) irradiation on the structural, electrical transport and thermal properties of Pr{sub 0.8}Sr{sub 0.2}MnO{sub 3} manganites has been investigated. Rietveld refinement of XRD data reveals that all samples are single phased with orthorhombic distorted structure (Pbnm). It is observed that the orthorhombic deformation increases with EB dosage. The Mn–O–Mn bond angle is found to increase with increase in EB dosage, presumably due to strain induced by these irradiations. Analysis on the measured electrical resistivity data indicates that the small polaron hopping model is operative in the high temperature region for pristine as well as EB irradiated samples. The electrical resistivity in the entire temperature region has been successfully fitted with the phenomenological percolation model which is based on phase segregation of ferromagnetic metallic clusters and paramagnetic insulating regions. The Seebeck coefficient (S) of the pristine as well as the irradiated samples exhibit positive values, indicating that holes is the dominant charge carriers. The analysis of Seebeck coefficient data confirms that the small polaron hopping mechanism governs the thermoelectric transport in the high temperature region. In addition, Seebeck coefficient data also is well fitted with the phenomenological percolation model. The behavior in thermal conductivity at the transition is ascribed to the local anharmonic distortions associated with small polarons. Specific heat measurement indicates that electron beam irradiation enhances the magnetic inhomogeneity of the system.

Anisotropic small-polaron hopping in W:BiVO4 single crystals

International Nuclear Information System (INIS)

Rettie, Alexander J. E.; Chemelewski, William D.; Zhou, Jianshi; Lindemuth, Jeffrey; McCloy, John S.; Marshall, Luke G.; Emin, David; Mullins, C. Buddie

2015-01-01

DC electrical conductivity, Seebeck and Hall coefficients are measured between 300 and 450 K on single crystals of monoclinic bismuth vanadate that are doped n-type with 0.3% tungsten donors (W:BiVO 4 ). Strongly activated small-polaron hopping is implied by the activation energies of the Arrhenius conductivities (about 300 meV) greatly exceeding the energies characterizing the falls of the Seebeck coefficients' magnitudes with increasing temperature (about 50 meV). Small-polaron hopping is further evidenced by the measured Hall mobility in the ab-plane (10 −1  cm 2  V −1  s −1 at 300 K) being larger and much less strongly activated than the deduced drift mobility (about 5 × 10 −5  cm 2  V −1  s −1 at 300 K). The conductivity and n-type Seebeck coefficient is found to be anisotropic with the conductivity larger and the Seebeck coefficient's magnitude smaller and less temperature dependent for motion within the ab-plane than that in the c-direction. These anisotropies are addressed by considering highly anisotropic next-nearest-neighbor (≈5 Å) transfers in addition to the somewhat shorter (≈4 Å), nearly isotropic nearest-neighbor transfers

Electronic transport properties of hot-pressed B/sub 6/Si

International Nuclear Information System (INIS)

Wood, C.; Emin, D.; Feigelson, R.S.; Mackinnon, I.D.R.

1987-01-01

Measurements of the electrical conductivity, Seebeck coefficient and Hall mobility from --300 K to --1300 K have been carried out on multiphase hotpressed samples of the nominal composition B/sub 6/Si. In all samples the conductivity and the p-type Seebeck coefficient both increase smoothly with increasing temperature. By themselves, these facts suggest small-polaronic hopping between inequivalent sites. The measured Hall mobilities are always low, but vary in sign. A possible explanation is offered for this anomalous behavior

Investigation of the correlation between stoichiometry and thermoelectric properties in a PtSb2 single crystal

DEFF Research Database (Denmark)

Søndergaard, Martin; Christensen, Mogens; Bjerg, Lasse

2012-01-01

utilizing X-Ray Diffraction and Energy Dispersive X-Ray Spectroscopy. The correlation between Pt/Sb ratio and physical property parameters - Seebeck coefficient, mobility, resistivity and charge carrier concentration - was studied. Elemental analysis by Energy Dispersive X-Ray Spectroscopy, X......The thermoelectric properties of a PtSb2 single crystal containing a stoichiometric gradient were investigated. The gradient was produced by employing a Stockbarger synthesis technique. The gradient was observed through the use of spatial resolved Seebeck coefficient measurements and verified...

Effect of oxygen vacancy distribution on the thermoelectric properties of La-doped SrTiO3 epitaxial thin films

KAUST Repository

Sarath Kumar, S. R.; Abutaha, Anas I.; Hedhili, Mohamed N.; Alshareef, Husam N.

2012-01-01

A detailed study of the role of oxygen vacancies in determining the effective mass and high temperature (300–1000 K) thermoelectricproperties of La-doped epitaxial SrTiO3 thin films is presented. It is observed that at intermediate temperatures, a transition from degenerate to non-degenerate behavior is observed in the Seebeck coefficient, but not electrical conductivity, which is attributed to heterogeneous oxygen non-stoichiometry. Heikes formula is found to be invalid for the films with oxygen vacancies. By fitting the spectroscopic ellipsometry (SE) data, obtained in the range 300–2100 nm, using a Drude-Lorentz dispersion relation with two Lorentz oscillators, the electrical and optical properties of the films are extracted. Using the excellent agreement between the transport properties extracted from SE modeling and direct electrical measurements, we demonstrate that an increase in concentration of oxygen vacancies results in a simultaneous increase of both carrier concentration and electron effective mass, resulting in a higher power factor.

Effect of oxygen vacancy distribution on the thermoelectric properties of La-doped SrTiO3 epitaxial thin films

KAUST Repository

Sarath Kumar, S. R.

2012-12-03

A detailed study of the role of oxygen vacancies in determining the effective mass and high temperature (300–1000 K) thermoelectricproperties of La-doped epitaxial SrTiO3 thin films is presented. It is observed that at intermediate temperatures, a transition from degenerate to non-degenerate behavior is observed in the Seebeck coefficient, but not electrical conductivity, which is attributed to heterogeneous oxygen non-stoichiometry. Heikes formula is found to be invalid for the films with oxygen vacancies. By fitting the spectroscopic ellipsometry (SE) data, obtained in the range 300–2100 nm, using a Drude-Lorentz dispersion relation with two Lorentz oscillators, the electrical and optical properties of the films are extracted. Using the excellent agreement between the transport properties extracted from SE modeling and direct electrical measurements, we demonstrate that an increase in concentration of oxygen vacancies results in a simultaneous increase of both carrier concentration and electron effective mass, resulting in a higher power factor.

Influence of germanium nano-inclusions on the thermoelectric power factor of bulk bismuth telluride alloy

International Nuclear Information System (INIS)

Satyala, Nikhil; Zamanipour, Zahra; Norouzzadeh, Payam; Krasinski, Jerzy S.; Vashaee, Daryoosh; Tahmasbi Rad, Armin; Tayebi, Lobat

2014-01-01

Nanocomposite thermoelectric compound of bismuth telluride (Bi 2 Te 3 ) with 5 at. % germanium nano-inclusions was prepared via mechanically alloying and sintering techniques. The influence of Ge nano-inclusions and long duration annealing on the thermoelectric properties of nanostructured Bi 2 Te 3 were investigated. It was found that annealing has significant effect on the carrier concentration, Seebeck coefficient, and the power factor of the thermoelectric compound. The systematic heat treatment also reduced the density of donor type defects thereby decreasing the electron concentration. While the as-pressed nanocomposite materials showed n-type properties, it was observed that with the increase of annealing time, the nanocomposite gradually transformed to an abundantly hole-dominated (p-type) sample. The long duration annealing (∼500 h) resulted in a significantly enhanced electrical conductivity pertaining to the augmentation in the density and the structural properties of the sample. Therefore, a simultaneous enhancement in both electrical and Seebeck coefficient characteristics resulted in a remarkable increase in the thermoelectric power factor.

Thermoelectric properties of In-substituted Ge-based clathrates prepared by HPHT

Directory of Open Access Journals (Sweden)

Binwu Liu

2018-03-01

Full Text Available Bulk materials Ba8Ga16InxGe30-x (x = 0.5, 1.0, 1.5 were prepared by High-Pressure and High-Temperature (HPHT method and the crystal structure has been confirmed by X-ray diffraction and cell refinement. The actual In composition was much lower than the starting composition, and lattice constants increased with the increase of substitution. As the temperature increased, the Seebeck coefficient and electrical resistivity increased first and then decreased, while the thermal conductivity was the opposite, which leads to significant enhancement on thermoelectric properties of the clathrates. The substitution of indium elements decreased the seebeck coefficient and electrical resistivity, and also changed the microstructure of the compounds. A minimum thermal conductivity of 0.84 Wm−1K−1 was obtained, and a good ZT value of 0.52 was achieved. The grain boundaries and lattice defects generated by high pressure can effectively scatter phonons of different frequencies, which reduce the lattice thermal conductivity.

Electrical and thermoelectric properties of different compositions of Ge–Se–In thin films

Energy Technology Data Exchange (ETDEWEB)

Aly, K.A., E-mail: kamalaly2001@gmail.com [Physics Department, Faculty of Science and Arts Khulais, University of Jeddah (Saudi Arabia); Physics Department, Faculty of Science, Al-Azhar University, Assiut Branch, Assiut (Egypt); Dahshan, A., E-mail: adahshan73@gmail.com [Department of Physics, Faculty of Science, Port Said University, Port Said (Egypt); Department of Physics, Faculty of Science for Girls, King Khalid University, Abha (Saudi Arabia); Abbady, Gh. [Department of Physics, Faculty of Science, Assuit University, Assuit (Egypt); Saddeek, Y. [Physics Department, Faculty of Science, Al-Azhar University, Assiut Branch, Assiut (Egypt)

2016-09-15

The effect of temperature in the range of 300–450 K and the indium content on the electrical and thermoelectric properties of Ge{sub 20}Se{sub 80−x}In{sub x} (0.0≤x≤24 at%) chalcogenide glassy thin films have been studied. From dc electrical and thermoelectric measurements, it was observed that the activation energies for electrical conductivity (ΔE) and for thermoelectric (ΔE{sub s}) decrease while the conductivity (σ) and Seebeck coefficient (S) increase upon introducing In into the Ge–Se glasses. In contrast to the behavior obtained with Bi or Pb doping, In incorporated in Ge–Se does not lead to a p-to n-type conduction inversion. The power factor (P) which is strongly depends on both of the Seebeck coefficient and the electrical conductivity. According to the obtained results, the Ge{sub 20}Se{sub 80−x}In{sub x} films can be considered potential candidates for incurring high action thermoelectric materials.

Synthesis and evaluation of lead telluride/bismuth antimony telluride nanocomposites for thermoelectric applications

Science.gov (United States)

Ganguly, Shreyashi; Zhou, Chen; Morelli, Donald; Sakamoto, Jeffrey; Uher, Ctirad; Brock, Stephanie L.

2011-12-01

Heterogeneous nanocomposites of p-type bismuth antimony telluride (Bi 2- xSb xTe 3) with lead telluride (PbTe) nanoinclusions have been prepared by an incipient wetness impregnation approach. The Seebeck coefficient, electrical resistivity, thermal conductivity and Hall coefficient were measured from 80 to 380 K in order to investigate the influence of PbTe nanoparticles on the thermoelectric performance of nanocomposites. The Seebeck coefficients and electrical resistivities of nanocomposites decrease with increasing PbTe nanoparticle concentration due to an increased hole concentration. The lattice thermal conductivity decreases with the addition of PbTe nanoparticles but the total thermal conductivity increases due to the increased electronic thermal conductivity. We conclude that the presence of nanosized PbTe in the bulk Bi 2- xSb xTe 3 matrix results in a collateral doping effect, which dominates transport properties. This study underscores the need for immiscible systems to achieve the decreased thermal transport properties possible from nanostructuring without compromising the electronic properties.

Improved microstructure and thermoelectric properties of iodine doped indium selenide as a function of sintering temperature

Science.gov (United States)

Dhama, Pallavi; Kumar, Aparabal; Banerji, P.

2018-04-01

In this paper, we explored the effect of sintering temperature on the microstructure, thermal and electrical properties of iodine doped indium selenide in the temperature range 300 - 700 K. Samples were prepared by a collaborative process of vacuum melting, ball milling and spark plasma sintering at 570 K, 630 K and 690 K. Single phase samples were obtained at higher sintering temperature as InSe is stable only at lower temperature. With increasing sintering temperature, densities of the samples were found to improve with larger grain size formation. Negative values of Seebeck coefficient were observed which indicates n-type carrier transport. Seebeck coefficient increases with sintering temperature and found to be the highest for the sample sintered at 690 K. Thermal conductivity found to be lower in the samples sintered at lower temperatures. The maximum thermoelectric figure of merit found to be ˜ 1 at 700 K due to the enhanced power factor as a result of improved microstructure.

High-temperature thermoelectric properties of p-type skutterudites Ba0.15Yb x Co3FeSb12 and Yb y Co3FeSb9As3

KAUST Repository

Dong, Yongkwan

2014-08-28

Two series of p-type polycrystalline skutterudites, Ba0.15YbxCo3FeSb12 and YbyCo3FeSb9As3 with varying Yb concentrations, were synthesized by solid-state reaction and then densified by hot pressing. The phase and stoichiometries of the resulting materials were characterized by powder X-ray diffraction and energy dispersive spectroscopy, while their high-temperature transport properties were investigated from 300 to 800 K. The Seebeck coefficients and electrical resistivities increased linearly with increasing temperature for the double-filled specimens. The Seebeck coefficients and electrical resistivities did not change very much for the As-substituted specimens. The thermal conductivity for all specimens decreased with increasing temperature up to 700 K, corresponding to the plateau in the Seebeck coefficient, and then increased again due to bipolar diffusion. We find that double filling is a more feasible approach to thermoelectric property optimization than single filling with As substitution. © 2014 Springer Science+Business Media New York.

Thermal conductivity of high purity vanadium

International Nuclear Information System (INIS)

Jung, W.D.

1975-01-01

The thermal conductivity, Seebeck coefficient, and electrical resistivity of four high-purity vanadium samples were measured over the temperature range 5 to 300 0 K. The highest purity sample had a resistance ratio (rho 273 /rho 4 . 2 ) of 1524. The highest purity sample had a thermal conductivity maximum of 920 W/mK at 9 0 K and had a thermal conductivity of 35 W/mK at room temperature. At low temperatures, the thermal resistivity was limited by the scattering of electrons by impurities and phonons. The thermal resistivity of vanadium departed from Matthiessen's rule at low temperatures. The electrical resistivity and Seebeck coefficient of high purity vanadium showed no anomalous behavior above 130 0 K. The intrinsic electrical resistivity at low temperatures was due primarily to interband scattering of electrons. The Seebeck coefficient was positive from 10 to 240 0 K and had a maximum which was dependent upon sample purity

Heat-driven spin torques in antiferromagnets

Science.gov (United States)

Białek, Marcin; Bréchet, Sylvain; Ansermet, Jean-Philippe

2018-04-01

Heat-driven magnetization damping, which is a linear function of a temperature gradient, is predicted in antiferromagnets by considering the sublattice dynamics subjected to a heat-driven spin torque. This points to the possibility of achieving spin torque oscillator behavior. The model is based on the magnetic Seebeck effect acting on sublattices which are exchange coupled. The heat-driven spin torque is estimated and the feasibility of detecting this effect is discussed.

100 watts in a confetti; 100 watts dans un confetti

Energy Technology Data Exchange (ETDEWEB)

Guezel, J.Ch.

2002-03-01

Technologies transferred from microelectronics will allow to build miniature power generators for portable applications. This short article gives an overview of some techniques under study: the free-piston engine of the Honeywell Technology Center, the micro-combustion system with Seebeck effect of South Carolina Univ., the hydrogen micro-turbine of the MIT, the Wankel gas micro-engine of Berkeley univ. (J.S.)

Effect of a strain on the magnetotransport properties of Bi wires

Science.gov (United States)

Condrea, E.; Gilewski, A.; Muntyanu, F.

2017-08-01

Measurements of the longitudinal resistance and Seebeck coefficient of Bi wires in a high magnetic field have revealed some anomalies in a magnetic field far above the quantum limit of the electrons; the most prominent feature is a sharp peak of magnetoresistance at 33 T. The observed correlation between a simultaneous shift of the position of the anomaly and the quantum limit of light electrons in a magnetic field during modification of the electronic structure under strain suggests that the unidentified peak can be attributed to the complex structure of the lowest Landau level of light electrons occurring in high magnetic fields.

Thermoelectric effect in nano-scaled lanthanides doped ZnO

Energy Technology Data Exchange (ETDEWEB)

Otal, E H; Canepa, H R; Walsoee de Reca, N E [Centro de Investigacion en Solidos, CITEFA, San Juan Bautista de La Salle 4397 (B1603ALO) Villa Martelli, Buenos Aires (Argentina); Schaeuble, N; Aguirre, M H, E-mail: canepa@citefa.gov.a, E-mail: myriam.aguirre@empa.c [Solid State Chemistry and Catalysis, Empa, Swiss Federal Laboratories for Materials Testing and Research, Ueberlandstrasse 129, CH-8600 Duebendorf (Switzerland)

2009-05-01

Start Nano-scaled ZnO with 1% Er doping was prepared by soft chemistry methods. The synthesis was carried out in anhydrous polar solvent to achieve a crystal size of a few nanometers. Resulting particles were processed as precipitates or multi layer films. Structural characterization was evaluated by X-Ray diffraction and transmission and scanning electron microscopy. In the case of films, UV-Vis characterization was made. The thermoelectrical properties of ZnO:Er were evaluated and compared with a typical good thermoelectric material ZnO:Al. Both materials have also shown high Seebeck coefficients and they can be considered as potential compounds for thermoelectric conversion.

Rectified motion in an asymmetrically structured channel due to induced-charge electrokinetic and thermo-kinetic phenomena

International Nuclear Information System (INIS)

Sugioka, Hideyuki

2016-01-01

It would be advantageous to move fluid by the gradient of random thermal noises that are omnipresent in the natural world. To achieve this motion, we propose a rectifier that uses a thermal noise along with induced-charge electroosmosis and electrophoresis (ICEO and ICEP) around a metal post cylinder in an asymmetrically structured channel and numerically examine its rectification performance. By the boundary element method combined with the thin double layer approximation, we find that rectified motion occurs in the asymmetrically structured channel due to ICEO and ICEP. Further, by thermodynamical and equivalent circuit methods, we discuss a thermal voltage that drives a rectifier consisting of a fluidic channel of an electrolyte and an impedance as a noise source. Our calculations show that fluid can be moved in the asymmetrically structured channel by the fluctuation of electric fields due to a thermal noise only when there is a temperature difference. In addition, our simple noise argument provides a different perspective for the thermo-kinetic phenomena (around a metal post) which was predicted based on the electrolyte Seebeck effect in our previous paper [H. Sugioka, “Nonlinear thermokinetic phenomena due to the Seebeck effect,” Langmuir 30, 8621 (2014)

Rectified motion in an asymmetrically structured channel due to induced-charge electrokinetic and thermo-kinetic phenomena

Energy Technology Data Exchange (ETDEWEB)

Sugioka, Hideyuki, E-mail: hsugioka@shinshu-u.ac.jp [Frontier Research Center, Canon Inc. 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 146-8501, Japan and Department of Mechanical Systems Engineering, Shinshu University 4-17-1 Wakasato, Nagano 380-8553 (Japan)

2016-02-15

It would be advantageous to move fluid by the gradient of random thermal noises that are omnipresent in the natural world. To achieve this motion, we propose a rectifier that uses a thermal noise along with induced-charge electroosmosis and electrophoresis (ICEO and ICEP) around a metal post cylinder in an asymmetrically structured channel and numerically examine its rectification performance. By the boundary element method combined with the thin double layer approximation, we find that rectified motion occurs in the asymmetrically structured channel due to ICEO and ICEP. Further, by thermodynamical and equivalent circuit methods, we discuss a thermal voltage that drives a rectifier consisting of a fluidic channel of an electrolyte and an impedance as a noise source. Our calculations show that fluid can be moved in the asymmetrically structured channel by the fluctuation of electric fields due to a thermal noise only when there is a temperature difference. In addition, our simple noise argument provides a different perspective for the thermo-kinetic phenomena (around a metal post) which was predicted based on the electrolyte Seebeck effect in our previous paper [H. Sugioka, “Nonlinear thermokinetic phenomena due to the Seebeck effect,” Langmuir 30, 8621 (2014)].

Effects of Ni and carbon-coated Ni addition on the thermoelectric properties of 25Bi{sub 2}Te{sub 3}+75Sb{sub 2}Te{sub 3} base composites

Energy Technology Data Exchange (ETDEWEB)

Yoon, Sang Min; Dharmaiah, Peyala; Femi, Olu Emmanuel; Lee, Chul Hee; Hong, Soon-Jik, E-mail: hongsj@kongju.ac.kr

2017-07-01

In this paper, we report the effect of nickel (Ni) and carbon coated nickel (C-Ni) on the thermoelectric and mechanical properties of 25Bi{sub 2}Te{sub 3}+75Sb{sub 2}Te{sub 3} (GA) base composites. Ni and C-Ni powders were synthesized using pulse wire evaporation and mixed with 25Bi{sub 2}Te{sub 3}+75Sb{sub 2}Te{sub 3} in a planetary ball mill. The morphology of the Ni and C-Ni powders and GA + x (x = none, Ni, or C-Ni) composites were examined using transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The thermoelectric properties of the GA + x (x = none, Ni, or C-Ni) composites shows that the addition of Ni increases the carrier concentration while the presence of C-Ni reduces the carrier concentration to a level comparable to the bare sample (x = 0). Subsequently, the Seebeck coefficient of the GA + C-Ni sample increases by about 18% more than in the bare sample. The thermal conductivity of the GA + Ni and GA + C-Ni samples was considerably lower at room temperature compared to the bare sample. The mechanical properties of the GA + Ni and GA + C-Ni composite samples show a three-fold improvement compared to the bare sample. - Highlights: • Ni and carbon-coated Ni nanoparticles were incorporated into 25Bi{sub 2}Te{sub 3}+75Sb{sub 2}Te{sub 3} (BST) matrix. • Seebeck coefficient increased by 18% for BST/carbon coated Ni composites. • BST/carbon coated Ni composite reduces the thermal conductivity (21%). • The Vickers hardness of the BST/C-Ni composite samples significantly improved.

Thermoelectric Properties of High-Doped Silicon from Room Temperature to 900 K

Science.gov (United States)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2013-07-01

Silicon is investigated as a low-cost, Earth-abundant thermoelectric material for high-temperature applications up to 900 K. For the calculation of module design the Seebeck coefficient and the electrical as well as thermal properties of silicon in the high-temperature range are of great importance. In this study, we evaluate the thermoelectric properties of low-, medium-, and high-doped silicon from room temperature to 900 K. In so doing, the Seebeck coefficient, the electrical and thermal conductivities, as well as the resulting figure of merit ZT of silicon are determined.

Effects of Mev Si Ions and Thermal Annealing on Thermoelectric and Optical Properties of SiO2/SiO2+Ge Multi-nanolayer thin Films

Science.gov (United States)

Budak, S.; Alim, M. A.; Bhattacharjee, S.; Muntele, C.

Thermoelectric generator devices have been prepared from 200 alternating layers of SiO2/SiO2+Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to formquantum dots and / or quantum clusters in the multi-layer superlattice thin films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient and increase the cross-plane electrical conductivity to increase the figure of merit, ZT. The fabricated devices have been annealed at the different temperatures to tailor the thermoelectric and optical properties of the superlattice thin film systems. While the temperature increased, the Seebeck coefficient continued to increase and reached the maximum value of -25 μV/K at the fluenceof 5x1013 ions/cm2. The decrease in resistivity has been seen between the fluence of 1x1013 ions/cm2 and 5x1013 ions/cm2. Transport properties like Hall coefficient, density and mobility did not change at all fluences. Impedance spectroscopy has been used to characterize the multi-junction thermoelectric devices. The loci obtained in the C*-plane for these data indicate non-Debye type relaxation displaying the presence of the depression parameter.

Anisotropic transport in the quasi-one-dimensional semiconductor Li{sub 0.33}MoO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Moshfeghyeganeh, S.; Cote, A. N.; Cohn, J. L., E-mail: cohn@physics.miami.edu [Department of Physics, University of Miami, Coral Gables, Florida 33124 (United States); Neumeier, J. J. [Department of Physics, Montana State University, Bozeman, Montana 59717 (United States)

2016-03-07

Transport measurements (electrical resistivity, Seebeck coefficient, and thermal conductivity) in the temperature range 80–500 K are presented for single crystals of the quasi-one-dimensional (Q1D) semiconductor Li{sub 0.33}MoO{sub 3}. Opposite signs are observed for the Seebeck coefficient along the trinclinic a and c axes, with S{sub c} − S{sub a} ≃ 250 μV/K near room temperature and ≃100 μV/K at 380 K. The thermal conductivity at room temperature in the a-c planes was ∼2 W/m K and ∼10 times smaller along b*. A weak structural anomaly at T{sub s} ≈ 355 K, identified in the temperature-dependent lattice constants, coincides with anomalies in the electrical properties. Analysis of the electronic transport at T > T{sub s} favors an intrinsic semiconductor picture for transport along the most conducting Q1D axis and small-polaronic transport along the other directions, providing insight into the origin of the Seebeck anisotropy.

Magneto-electronic, thermal, and thermoelectric properties of some Co-based quaternary alloys

Science.gov (United States)

Bhat, Tahir Mohiuddin; Gupta, Dinesh C.

2018-01-01

In this study, quaternary Heusler alloys CoFeCrZ (Z = Si, As, Sb) were investigated based on the modified Becke-Johnson exchange potential. The electronic structures demonstrated that CoFeCrZ (Z = Si, As, Sb) alloys are completely spin polarized with indirect bandgap and has an integer magnetic moment according to the Slater-Pauling rule. Pugh's and Poisson's ratios showed that these materials are highly ductile with high melting temperatures. The thermal properties comprising the thermal expansion coefficient, heat capacity, and Grüneisen parameter were evaluated at various pressures from 0 to 20 GPa. The Grüneisen parameter values indicated the strong anharmonicity of the lattice vibrations that predominated in these compounds. We also studied the dependency of the thermoelectric transport properties on the temperature, i.e., the thermal conductivity and Seebeck coefficient. These alloys exhibited low lattice thermal conductivity and good Seebeck coefficients at room temperature. The half-metallic structures of these compounds with large band gaps and adequate Seebeck coefficients mean that they are suitable for use in spintronic and thermoelectric device applications.

Attempting to realize n-type BiCuSeO

Science.gov (United States)

Zhang, Xiaoxuan; Feng, Dan; He, Jiaqing; Zhao, Li-Dong

2018-02-01

As an intrinsic p-type semiconductor, BiCuSeO has been widely researched in the thermoelectric community, however, n-type BiCuSeO has not been reported so far. In this work, we successfully realized n-type BiCuSeO through carrying out several successive efforts. Seebeck coefficient of BiCuSeO was increased through introducing extra Bi/Cu to fill the Bi/Cu vacancies that may produce holes, and the maximum Seebeck coefficient was increase from +447 μVK-1 for undoped BiCuSeO to +638 μVK-1 for Bi1.04Cu1.05SeO. The Seebeck coefficient of Bi1.04Cu1.05SeO was changed from p-type to n-type through electron doping through introducing Br/I in Se sites, the maximum negative Seebeck coefficient can reach ∼ -465 μVK-1 and -543 μVK-1 for Bi1.04Cu1.05Se1-xIxO and Bi1.04Cu1.05Se1-xBrxO, respectively. Then, after compositing Bi1.04Cu1.05Se0.99Br0.01O with Ag, n-type BiCuSeO can be absolutely obtained in the whole temperature range of 300-873 K, the maximum ZT 0.05 was achieved at 475 K in the Bi1.04Cu1.05Se0.99Br0.01O+15% Ag. Our report indicates that it is possible to realize n-type conducting behaviors in BiCuSeO system.

Thermoelectric Properties in Fermi Level Tuned Topological Materials (Bi1-xSnx)2Te3

Science.gov (United States)

Lin, Chan-Chieh; Shon, Won Hyuk; Rathnam, Lydia; Rhyee, Jong-Soo

2018-03-01

We investigated the thermoelectric properties of Sn-doped (Bi1-xSnx)2Te3 (x = 0, 0.1, 0.3, 0.5, and 0.7%) compounds, which is known as topological insulators. Fermi level tuning by Sn-doping can be justified by the n- to p-type transition with increasing Sn-doping concentration, as confirmed by Seebeck coefficient and Hall coefficient. Near x = 0.3 and 0.5%, the Fermi level resides inside the bulk band gap, resulting in a low Seebeck coefficient and increase of electrical resistivity. The magnetoconductivity with applying magnetic field showed weak antilocalization (WAL) effect for pristine Bi2Te3 while Sn-doped compounds do not follow the WAL behavior of magneto-conductivity, implying that the topological surface Dirac band contribution in magneto-conductivity is suppressed with decreasing the Fermi level by Sn-doping. This research can be applied to the topological composite of p-type/n-type topological materials by Fermi level tuning via Sn-doping in Bi2Te3 compounds.

Improvement of thermoelectric properties of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films grown on graphene substrate

Energy Technology Data Exchange (ETDEWEB)

Lee, Chang Wan [Thin Film Materials Research Group, Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of); School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of); Kim, Gun Hwan; Choi, Ji Woon; An, Ki-Seok; Lee, Young Kuk [Thin Film Materials Research Group, Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of); Kim, Jin-Sang [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Kim, Hyungjun [School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of)

2017-06-15

A study of substrate effect on the thermoelectric (TE) properties of Bi{sub 2}Te{sub 3} (BT) and Sb{sub 2}Te{sub 3} (ST) thin films grown by plasma-enhanced chemical vapor deposition (PECVD) was performed. Graphene substrates which have small lattice mismatch with BT and ST were used for the preparation of highly oriented BT and ST thin films. Carrier mobility of the epitaxial BT and ST films grown on the graphene substrates increased as the deposition temperature increased, which was not observed in that of SiO{sub 2}/Si substrates. Seebeck coefficients of the as-grown BT and ST films were observed to be maintained even though carrier concentration increased in the epitaxial BT and ST films on graphene substrate. Although Seebeck coefficient was not improved, power factor of the as-grown BT and ST films was considerably enhanced due to the increase of electrical conductivity resulting from the high carrier mobility and moderate carrier concentration in the epitaxial BT and ST films. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Thermoelectric Properties of Cu-doped Bi2-xSbxTe3 Prepared by Encapsulated Melting and Hot Pressing

Science.gov (United States)

Jung, Woo-Jin; Kim, Il-Ho

2018-03-01

P-type Bi2-xSbxTe3:Cum (x = 1.5-1.7 and m = 0.002-0.003) solid solutions were synthesized using encapsulated melting and were consolidated using hot pressing. The effects of Sb substitution and Cu doping on the charge transport and thermoelectric properties were examined. The lattice constants decreased with increasing Sb and Cu contents. As the amount of Sb substitution and Cu doping was increased, the electrical conductivity increased, and the Seebeck coefficient decreased owing to the increase in the carrier concentration. All specimens exhibited degenerate semiconductor characteristics and positive Hall and Seebeck coefficients, indicating p-type conduction. The increased Sb substitution caused a shift in the onset temperature of the intrinsic transition and bipolar conduction to higher temperatures. The electronic thermal conductivity increased with increasing Sb and Cu contents owing to the increase in the carrier concentration, while the lattice thermal conductivity slightly decreased due to alloy scattering. A maximum figure of merit, ZTmax = 1.25, was achieved at 373 K for Bi0.4Sb1.6Te3:Cu0.003.

Efficiency Study of a Commercial Thermoelectric Power Generator (TEG) Under Thermal Cycling

Science.gov (United States)

Hatzikraniotis, E.; Zorbas, K. T.; Samaras, I.; Kyratsi, Th.; Paraskevopoulos, K. M.

2010-09-01

Thermoelectric generators (TEGs) make use of the Seebeck effect in semiconductors for the direct conversion of heat to electrical energy. The possible use of a device consisting of numerous TEG modules for waste heat recovery from an internal combustion (IC) engine could considerably help worldwide efforts towards energy saving. However, commercially available TEGs operate at temperatures much lower than the actual operating temperature range in the exhaust pipe of an automobile, which could cause structural failure of the thermoelectric elements. Furthermore, continuous thermal cycling could lead to reduced efficiency and lifetime of the TEG. In this work we investigate the long-term performance and stability of a commercially available TEG under temperature and power cycling. The module was subjected to sequential hot-side heating (at 200°C) and cooling for long times (3000 h) in order to measure changes in the TEG’s performance. A reduction in Seebeck coefficient and an increase in resistivity were observed. Alternating-current (AC) impedance measurements and scanning electron microscope (SEM) observations were performed on the module, and results are presented and discussed.

Palladium sulphide (PdS) films as a new thermoelectric sulphide compound

Energy Technology Data Exchange (ETDEWEB)

Ares, J.R.; Diaz-Chao, P.; Clamagirand, J.; Macia, M.D.; Ferrer, I.J.; Sanchez, C. [Universidad Autonoma de Madrid (Spain). Lab. de Materiales de Interes en Energias Renovables

2010-07-01

Palladium sulphide (PdS) films have been prepared by direct sulphuration of 20 nm thick palladium films at different temperatures (200 C < T < 450 C). Sulphurated films exhibit an unique crystalline phase: PdS. Seebeck coefficient and electrical resistivity of these films are between -110 and -150 {mu}V/K and {proportional_to} 0.08 to 0.8 {omega}cm depending on the sulphuration temperature. Negative sign of Seebeck coefficient indicates an n type conduction in all films. Discussion is focused on the influence of atomic ratio between sulphur and palladium as well as impurities arising from the substrate on transport properties. (orig.)

Microstructure and thermoelectric properties of doped p-type CoSb3 under TGZM effect

Science.gov (United States)

Wang, Hongqiang; Li, Shuangming; Li, Xin; Zhong, Hong

2017-05-01

The Co-96.9 wt% Sb hypoeutectic alloy doped by 0.12 wt% YbFe was solidified in a Bridgman-type furnace based on temperature gradient zone melting (TGZM) effect. A mushy zone was observed between the complete liquid zone and the solid zone at different thermal stabilization time ranging from 15 min to 40 h. The mushy-zone solidified microstructures of the alloy only consist of CoSb3 and Sb phase. After 40 h thermal stabilization time, the volume fraction of CoSb3 in the mushy zone increases significantly up to 99.6% close to the solid-liquid interface. The hardness and fracture toughness of doped CoSb3 can reach 7.01 ± 0.69 GPa and 0.78 ± 0.08 MPa·m1/2, respectively. Meanwhile, the thermoelectric properties of the alloy were measured ranging from room temperature (RT) to 850 K. The Seebeck coefficient of the specimen prepared by TGZM effect after 40 h could reach 155 μV/K and the ZT value is 0.47 at 660 K, showing that it is feasible to prepare CoSb3 bulk material via TGZM effect. As a simple and one-step solidification method, the TGZM technique could be applied in the preparation of skutterudite compounds.

Valley-locked thermospin effect in silicene and germanene with asymmetric magnetic field induced by ferromagnetic proximity effect

Science.gov (United States)

Zhai, Xuechao; Wang, Yun-Tong; Wen, Rui; Wang, Shu-Xuan; Tian, Yue; Zhou, Xingfei; Chen, Wei; Yang, Zhihong

2018-02-01

Silicene and germanene, as graphenelike materials with observable spin-orbit couplings and two distinctive valleys, have potential applications in future low-dissipation spintronics and valleytronics. We here propose a magnetic system of silicene or germanene intercalated between two ferromagetic (FM) dielectric layers, and find that the system with a proximity-induced asymmetric magnetic field supports an attractive phenomenon named the valley-locked spin-dependent Seebeck effect (VL-SSE) driven by a thermal gradient. The VL-SSE indicates that the carries from only one valley could be thermally excited, with opposite spin polarization counterpropagating along the thermal gradient direction, while nearly no carrier from the other insulating valley is excited due to the relatively wide band gap. It is also illustrated that the VL-SSE here does not survive in the usual FM or anti-FM systems, and can be destroyed by the overlarge temperature broadening. Moreover, we prove that the signal for VL-SSE can be weakened gradually with the enhancement of the local interlayer electric field, and be strengthened lineally by increasing the source-drain temperature difference in a caloritronic field effect transistor. Further calculations indicate that the VL-SSE is robust against many perturbations, including the global and local Fermi levels as well as the magnetic strength. These findings about the valley-locked thermospin effect provide a nontrivial and convenient dimension to control the quantum numbers of spin and valley and are expected to be applied in future spin-valley logic circuits and energy-saving devices.

Thermographic measurements of the spin Peltier effect in metal/yttrium-iron-garnet junction systems

Science.gov (United States)

Daimon, Shunsuke; Uchida, Ken-ichi; Iguchi, Ryo; Hioki, Tomosato; Saitoh, Eiji

2017-07-01

The spin Peltier effect (SPE), heat-current generation due to spin-current injection, in various metal (Pt, W, and Au single layers and Pt/Cu bilayer)/ferrimagnetic insulator [yttrium-iron-garnet (YIG)] junction systems has been investigated by means of a lock-in thermography (LIT) method. The SPE is excited by a spin current across the metal/YIG interface, which is generated by applying a charge current to the metallic layer via the spin Hall effect. The LIT method enables the thermal imaging of the SPE free from the Joule-heating contribution. Importantly, we observed spin-current-induced temperature modulation not only in the Pt/YIG and W/YIG systems, but also in the Au/YIG and Pt/Cu/YIG systems, excluding the possible contamination by anomalous Ettingshausen effects due to proximity-induced ferromagnetism near the metal/YIG interface. As demonstrated in our previous study, the SPE signals are confined only in the vicinity of the metal/YIG interface; we buttress this conclusion by reducing a spatial blur due to thermal diffusion in an infrared-emission layer on the sample surface used for the LIT measurements. We also found that the YIG-thickness dependence of the SPE is similar to that of the spin Seebeck effect measured in the same Pt/YIG sample, implying the reciprocal relation between them.

Thermoelectric properties of TbFe{sub 2} and TbCo{sub 2} in C15- laves phase: Spin-polarized DFT+U approach

Energy Technology Data Exchange (ETDEWEB)

Reshak, A.H., E-mail: maalidph@yahoo.co.uk [New Technologies - Research Centre, University of West Bohemia, Univerzitni 8, Pilsen 306 14 (Czech Republic); School of Material Engineering, University Malaysia Perlis, Kangar, Perlis 01007 (Malaysia)

2017-01-15

Thermoelectric properties of materials are intimately related to their electronic band structure. Combining first- and second-principles calculations, we have obtained the transport properties for the spin-up and spin-down electrons of the laves phase TbFe{sub 2} and TbCo{sub 2} compounds. The unique band structure feature and the density of states at Fermi level (E{sub F}) promote the E{sub F} to a point where carriers are in energetic proximity to these features. The non-zero density of states at E{sub F} for the spin-up (↑) and spin-down (↓) electrons leads to unusual transport properties because both the (↑) and (↓) densities contributes to the states at E{sub F}. The parabolic bands in the vicinity of E{sub F} enhance the carriers mobility and hence the transport properties of TbFe{sub 2} and TbCo{sub 2}. Calculations show that the spin-up/down transport coefficients are temperature-dependent. It has been found that TbCo{sub 2} possess larger Seebeck coefficient than that of TbFe{sub 2} and hence the power factor. The calculated Seebeck coefficient of TbCo{sub 2} agree well with the available experimental data. - Highlights: • The transport properties of TbFe{sub 2} and TbCo{sub 2} are obtained. • The non-zero density of states at E{sub F} leads to unusual transport properties. • Spin-up/down transport coefficients are temperature-dependent. • The calculated Seebeck coefficient of TbCo{sub 2} agree with the experimental data. • TbCo{sub 2} possesses larger Seebeck coefficient than that of TbFe{sub 2}.

Innovative direct energy conversion systems using electronic adiabatic processes of electron fluid in solid conductors: new plants of electrical power and hydrogen gas resources without environmental pollutions

International Nuclear Information System (INIS)

Kondoh, Y.; Kondo, M.; Shimoda, K.; Takahashi, T.

2001-07-01

It is shown that using a novel recycling process of the environmental thermal energy, innovative permanent auto-working direct energy converter systems (PA-DEC systems) from the environmental thermal to electrical and/or chemical potential (TE/CP) energies, abbreviated as PA-TE/CP-DEC systems, can be used for new auto-working electrical power plants and the plants of the compressible and conveyable hydrogen gas resources at various regions in the whole world, with contributions to the world peace and the economical development in the south part of the world. It is shown that the same physical mechanism by free electrons and electrical potential determined by temperature in conductors, which include semiconductors, leads to the Peltier effect and the Seebeck one. It is experimentally clarified that the long distance separation between two π type elements of the heat absorption (HAS) and the production one (HPS) of the Peltier effect circuit system or between the higher temperature side (HTS) and the lower one (LTS) of the Seebeck effect circuit one does not change in the whole for the both effects. By using present systems, we do not need to use petrified fuels such as coals, oils, and natural gases in order to decrease the greenhouse effect by the CO 2 surrounding the earth. Furthermore, we do not need plats of nuclear fissions that left radiating wastes, i.e., with no environmental pollutions. The PA-TE/CP-DEC systems can be applicable for several km scale systems to the micro ones, such as the plants of the electrical power, the compact transportable hydrogen gas resources, a large heat energy container, which can be settled at far place from thermal energy absorbing area, the refrigerators, the air conditioners, home electrical apparatuses, and further the computer elements. It is shown that the simplest PA-TE/CP-DEC system can be established by using only the Seebeck effect components and the resolving water ones. It is clarified that the externally applied

Large tunneling anisotropic magneto-Seebeck effect in a CoPt/MgO/Pt tunnel junction

Czech Academy of Sciences Publication Activity Database

Amin, V.P.; Zemen, Jan; Železný, Jakub; Jungwirth, Tomáš; Sinova, Jairo

2014-01-01

Roč. 90, č. 14 (2014), , "140406-1"-"140406-5" ISSN 1098-0121 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : spin tronics * spin caloritronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

Polymer-Derived Silicon Oxycarbide Ceramics as Promising Next-Generation Sustainable Thermoelectrics.

Science.gov (United States)

Kousaalya, Adhimoolam Bakthavachalam; Zeng, Xiaoyu; Karakaya, Mehmet; Tritt, Terry; Pilla, Srikanth; Rao, Apparao M

2018-01-24

We demonstrate the potential of polymer-derived ceramics (PDC) as next-generation sustainable thermoelectrics. Thermoelectric behavior of polymer-derived silicon oxycarbide (SiOC) ceramics (containing hexagonal boron nitride (h-BN) as filler) was studied as a function of measurement temperature. SiOC, sintered at 1300 °C exhibited invariant low thermal conductivity (∼1.5 W/(m·K)) over 30-600 °C, coupled with a small increase in both Seebeck coefficient and electrical conductivity, with increase in measurement temperature (30-150 °C). SiOC ceramics containing 1 wt % h-BN showed the highest Seebeck coefficient (-33 μV/K) for any PDC thus far.

Solar-TEP - Development of materials for thermo-electric power generators; SOLAR-TEP - Materialentwicklung fuer solarthermoelektrische Stromerzeuger - Schlussbericht 2008

Energy Technology Data Exchange (ETDEWEB)

Robert, R.; Weidenkaff, A.

2008-06-15

This final report for the Swiss Federal Office of Energy (SFOE) reports on the development of materials for thermo-electric power generators. Cobaltate phases are discussed as being suitable materials for thermoelectric applications at high temperatures. These potential thermoelectric materials are characterised with respect to their crystal structure, microstructure, composition, and thermal stability. The Seebeck coefficient, thermal conductivity and electrical resistivity of polycrystalline cobaltates with perovskite-type and layered-cobaltite structure are evaluated for a wide temperature range. The large Seebeck coefficient exhibited by both perovskite-type and layered cobaltite phases is analysed using the Heikes formula. The work is illustrated with results obtained for various materials in graphical form.

Enhanced thermoelectric performance of amorphous Nb based oxynitrides

Science.gov (United States)

Music, Denis; Geyer, Richard W.; Hans, Marcus

2015-12-01

Using density functional theory, amorphous Nb0.27Ru0.06O0.56N0.10 was designed to facilitate a combination of an enhanced Seebeck coefficient and low electrical resistivity. Based on a positive Cauchy pressure, ductile behavior is expected. To verify these predictions, the transport and mechanical properties of amorphous thin films were evaluated. Metallic electrical resistivity and the Seebeck coefficient of -94 μV K-1 are obtained, which is consistent with our predictions. As there is no crack formation, these samples can be perceived as ductile. We demonstrate that the power factor can be increased by an order of magnitude, while keeping the thermal fatigue low.

Mg doped InN and confirmation of free holes in InN

International Nuclear Information System (INIS)

Wang, K.; Yamaguchi, T.; Miller, N.; Mayer, M. A.; Haller, E. E.; Iwamoto, R.; Araki, T.; Nanishi, Y.; Yu, K. M.; Walukiewicz, W.; Ager, J. W. III

2011-01-01

We report a systematic investigation on Mg doped InN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy. Electrolyte capacitance voltage (ECV) combined with thermopower measurements find p-type conduction over an Mg concentration range. For InN:Mg in this p-type 'window' the Seebeck coefficients dramatically change their signs from negative to positive when the thickness of undoped InN interlayer decreases to zero. This notable sign change of Seebeck coefficient explains the previous inconsistency between ECV and thermopower results and confirms the existence of mobile holes in the InN:Mg. Taking into account the undoped InN interlayer, the hole density and mobility are extracted.

Development of Inexpensive, Efficient and Non-Toxic Thermoelectric Materials

Science.gov (United States)

Gali, Anand Pratik

In the wake of the impending climate change challenges, it is highly necessary to reevaluate our energy utilization technologies and ensure their efficient operation. Fossil fuel powered power-plants account for the majority of the energy production in the United States. With an average efficiency not exceeding 40%, these fossil fuel power plants dissipate exorbitant amounts of wasted heat. One of the ways of making such energy conversion processes more efficient is by incorporating technologies that can harvest this scavenge heat. One of the ways of achieving this is by the use of thermoelectric (TE) materials, which utilize the Seebeck effect to convert thermal gradient into potential difference. Therefore, our research project focusses on development of TE materials, which are inexpensive, efficient, and non-toxic. Fe0.50V0.25Al0.25 is a narrow band-gap semiconductor, ideal for TE applications. Unlike the current market leader Bi0.4Te0.6, Fe0.50V0.25 Al0.25 contains earth abundant and non-toxic constituents making it viable for commercial production. Nevertheless, the TE efficiency, ZT, of Fe0.50V0.25Al0.25 is limited by its high thermal conductivity. Therefore, the goal of the current research is two-fold. Firstly, to design and fabricate apparatus for performing TE characterization on bulk materials. For this purpose, two sets of apparatus were designed and fabricated for measuring high temperature Seebeck coefficient and electrical resistivity. Secondly, to study the influence of doping on TE properties of Fe0.50V0.25Al0.25 alloy. In order to achieve this, vanadium in Fe0.50V0.25Al0.25 was substituted with dopants like Ti, Cr, Zr, W, Nb, Ta. This led to a 20 times improvement in ZT, from the baseline Fe0.50V0.25Al0.25, by effectively reducing the thermal conductivity and increasing the Seebeck coefficient.

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics

Science.gov (United States)

Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant

2014-11-01

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in

Small radioisotope powered batteries

International Nuclear Information System (INIS)

Myatt, J.

1975-06-01

Various methods of converting the large amounts of energy stored in radioisotopes are described. These are based on:- (a) the Seebeck effect; (b) thermionic emission of electrons from a hot body; (c) the Stirling Cycle; and (d) radiovoltaic charge separation in 'p-n' junctions. Small generators in the range 0 to 100 W(e) developed using these effects are described and typical applications for each of these systems are given. These include data collection and transmission from remote sites, implantable medical devices, lighthouses, radio beacons, and space power supplies. (author)

Direct measurement of magnon temperature: new insight into magnon-phonon coupling in magnetic insulators.

Science.gov (United States)

Agrawal, M; Vasyuchka, V I; Serga, A A; Karenowska, A D; Melkov, G A; Hillebrands, B

2013-09-06

We present spatially resolved measurements of the magnon temperature in a magnetic insulator subject to a thermal gradient. Our data reveal an unexpectedly close correspondence between the spatial dependencies of the exchange magnon and phonon temperatures. These results indicate that if--as is currently thought--the transverse spin Seebeck effect is caused by a temperature difference between the magnon and phonon baths, it must be the case that the magnon temperature is spectrally nonuniform and that the effect is driven by the sparsely populated dipolar region of the magnon spectrum.

High-throughput exploration of thermoelectric and mechanical properties of amorphous NbO_2 with transition metal additions

International Nuclear Information System (INIS)

Music, Denis; Geyer, Richard W.; Hans, Marcus

2016-01-01

To increase the thermoelectric efficiency and reduce the thermal fatigue upon cyclic heat loading, alloying of amorphous NbO_2 with all 3d and 5d transition metals has systematically been investigated using density functional theory. It was found that Ta fulfills the key design criteria, namely, enhancement of the Seebeck coefficient and positive Cauchy pressure (ductility gauge). These quantum mechanical predictions were validated by assessing the thermoelectric and elastic properties on combinatorial thin films, which is a high-throughput approach. The maximum power factor is 2813 μW m"−"1 K"−"2 for the Ta/Nb ratio of 0.25, which is a hundredfold increment compared to pure NbO_2 and exceeds many oxide thermoelectrics. Based on the elasticity measurements, the consistency between theory and experiment for the Cauchy pressure was attained within 2%. On the basis of the electronic structure analysis, these configurations can be perceived as metallic, which is consistent with low electrical resistivity and ductile behavior. Furthermore, a pronounced quantum confinement effect occurs, which is identified as the physical origin for the Seebeck coefficient enhancement.

High-throughput exploration of thermoelectric and mechanical properties of amorphous NbO{sub 2} with transition metal additions

Energy Technology Data Exchange (ETDEWEB)

Music, Denis, E-mail: music@mch.rwth-aachen.de; Geyer, Richard W.; Hans, Marcus [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, 52074 Aachen (Germany)

2016-07-28

To increase the thermoelectric efficiency and reduce the thermal fatigue upon cyclic heat loading, alloying of amorphous NbO{sub 2} with all 3d and 5d transition metals has systematically been investigated using density functional theory. It was found that Ta fulfills the key design criteria, namely, enhancement of the Seebeck coefficient and positive Cauchy pressure (ductility gauge). These quantum mechanical predictions were validated by assessing the thermoelectric and elastic properties on combinatorial thin films, which is a high-throughput approach. The maximum power factor is 2813 μW m{sup −1} K{sup −2} for the Ta/Nb ratio of 0.25, which is a hundredfold increment compared to pure NbO{sub 2} and exceeds many oxide thermoelectrics. Based on the elasticity measurements, the consistency between theory and experiment for the Cauchy pressure was attained within 2%. On the basis of the electronic structure analysis, these configurations can be perceived as metallic, which is consistent with low electrical resistivity and ductile behavior. Furthermore, a pronounced quantum confinement effect occurs, which is identified as the physical origin for the Seebeck coefficient enhancement.

Thermoelectric property of fine-grained CoSb3 skutterudite compound fabricated by mechanical alloying and spark plasma sintering

International Nuclear Information System (INIS)

Liu Weishu; Zhang Boping; Li Jingfeng; Zhao Lidong

2007-01-01

Skutterudite CoSb 3 polycrystalline materials were prepared using a combined process of mechanical alloying (MA) and spark plasma sintering (SPS). The influence of SPS temperature on the thermoelectric properties was focused in this work with a special emphasis on the analysis of the size effects of grains. The average grain sizes decreased from 300 to 50 nm with decreasing SPS temperatures from 600 to 300 deg. C. The electrical resistivities of samples spark plasma sintered at 300-600 deg. C all decreased with increasing temperature, indicating a classic intrinsic conduction behaviour of semiconductors. The samples spark plasma sintered at 300-500 deg. C showed a positive Seebeck coefficient while the sample spark plasma sintered at 600 deg. C showed a negative Seebeck coefficient. The room-temperature thermal conductivities were reduced from 4.30 to 2.92 W m -1 K -1 as the grain sizes were decreased from 300 to 100 nm corresponding to SPS at 600 and 400 deg. C, respectively. The present work indicates that MA and SPS is a good combination for fabricating fine-grained CoSb 3 thermoelectric materials

Studying physical properties of CuInS2 absorber layers grown by spin coating method on different kinds of substrates

Science.gov (United States)

Amerioun, M. H.; Ghazi, M. E.; Izadifard, M.

2018-03-01

In this work, first the CuInS2 (CIS2) layers are deposited on Aluminum and polyethylene terephthalate (PET) as flexible substrates, and on glass and soda lime glass (SLG) as rigid substrates by the sol-gel method. Then the samples are analyzed by x-ray diffractomery (XRD) and atomic force microscope (AFM) to investigate the crystal structures and surface roughness of the samples. The I-V curve measurements and Seebeck effect setup are used to measure the electrical properties of the samples. The XRD data obtained for the CIS2 layers show that all the prepared samples have a single phase with a preferred orientation that is substrate-dependent. The samples grown on the rigid substrates had higher crystallite sizes. The results obtained for the optical measurements indicate the dependence of the band gap energy on the substrate type. The measured Seebeck coefficient showed that the carriers were of p-type in all the samples. According to the AFM images, the surface roughness also varied in the CIS2 layers with different substrates. In this regard, the type of substrate could be an important parameter for the final performance of the fabricated CIS2 cells.

Thermoelectric properties of c-GeSb{sub 0.75}Te{sub 0.5} to h-GeSbTe{sub 0.5} thin films through annealing treatment effects

Energy Technology Data Exchange (ETDEWEB)

Vora-ud, Athorn, E-mail: athornvora-ud@snru.ac.th [Program of Physics, Faculty of Science and Technology, Sakon Nakhon Rajabhat University, Mueang District, Sakon Nakhon 47000 (Thailand); Thermoelectrics Research Center, Research and Development Institution, Sakon Nakhon Rajabhat University, Mueang District, Sakon Nakhon 47000 (Thailand); Horprathum, Mati, E-mail: mati.horprathum@nectec.or.th [National Electronics and Computer Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Eiamchai, Pitak [National Electronics and Computer Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Muthitamongkol, Pennapa; Chayasombat, Bralee; Thanachayanont, Chanchana [National Metal and Materials Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Pankiew, Apirak [National Electronics and Computer Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Klamchuen, Annop [National Nanotechnology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Naenkieng, Daengdech; Plirdpring, Theerayuth; Harnwunggmoung, Adul [Thermoelectric and Nanotechnology Research Center, Faculty of Science and Technology, Rajamangala University of Technology Suvarnabhumi, Huntra Phranakhon, Si Ayutthaya 13000 (Thailand); Charoenphakdee, Anek [NANO-Thermoelectrics Research Center, Division of Applied Physics, Faculty of Sciences and Liberal Arts, Rajamangala University of Technology Isan, Mueng Nakorn Ratchasima 30000 Thailand (Thailand); Somkhunthot, Weerasak [Program of Physics, Faculty of Science and Technology, Loei Rajabhat University, Muang District, Loei 42000 (Thailand); and others

2015-11-15

Germanium–Antimony–Tellurium (Ge–Sb–Te) thin films were deposited on silicon wafers with 1-μm silicon dioxide (SiO{sub 2}/Si) by pulsed dc magnetron sputtering from a 99.99% GeSbTe target of 1:1:1 ratio at ambient temperature. The samples were annealed at 573, 623, 673, and 723 K for 3600 s in a vacuum state. The effects of the annealing treatment on phase identification, atomic composition, morphology and film thickness, carrier concentration, mobility, and Seebeck coefficient of the Ge–Sb–Te samples have been investigated by grazing-incidence X-ray diffraction, auger electron spectroscopy, field-emission scanning electron microscopy, Hall-effect measurements, and steady state method, respectively. The results demonstrated that the as-deposited Ge–Sb–Te sample was amorphous. Atomic composition of as-deposited and annealed films at 573 K and 623 K were GeSb{sub 0.75}Te{sub 0.5} while annealed films at 673 K and 723 K were GeSbTe{sub 0.5} due to Sb-rich GeSb{sub 0.75}Te{sub 0.5}. The samples annealed at 573 K and 623 K showed the crystal phases of cubic structure (c-GeSb{sub 0.75}Te{sub 0.5}) into hexagonal structure (h-GeSbTe{sub 0.5}) after annealing at 673 K and 723 K. The study demonstrated the insulating condition from the as-deposited GeSbTe film, and the changes towards the thermoelectric properties from the annealing treatments. The GeSbTe films annealed at 673 K yielded excellent thermoelectric properties with the electrical resistivity, Seebeck coefficient, and power factor at approximately 1.45 × 10{sup −5} Ωm, 71.07 μV K{sup −1}, and 3.48 × 10{sup −4} W m{sup −1} K{sup −2}, respectively. - Highlights: • GeSbTe thin films were successfully sputtered for thermoelectric properties. • GeSbTe films were examined among physical, electrical and thermoelectric properties. • Thermoelectric properties were discussed based on composition of the films.

Enhanced thermoelectric performance of amorphous Nb based oxynitrides

Energy Technology Data Exchange (ETDEWEB)

Music, Denis, E-mail: music@mch.rwth-aachen.de; Geyer, Richard W.; Hans, Marcus

2015-12-15

Using density functional theory, amorphous Nb{sub 0.27}Ru{sub 0.06}O{sub 0.56}N{sub 0.10} was designed to facilitate a combination of an enhanced Seebeck coefficient and low electrical resistivity. Based on a positive Cauchy pressure, ductile behavior is expected. To verify these predictions, the transport and mechanical properties of amorphous thin films were evaluated. Metallic electrical resistivity and the Seebeck coefficient of −94 µV K{sup −1} are obtained, which is consistent with our predictions. As there is no crack formation, these samples can be perceived as ductile. We demonstrate that the power factor can be increased by an order of magnitude, while keeping the thermal fatigue low.

Enhanced thermoelectric performance of amorphous Nb based oxynitrides

International Nuclear Information System (INIS)

Music, Denis; Geyer, Richard W.; Hans, Marcus

2015-01-01

Using density functional theory, amorphous Nb_0_._2_7Ru_0_._0_6O_0_._5_6N_0_._1_0 was designed to facilitate a combination of an enhanced Seebeck coefficient and low electrical resistivity. Based on a positive Cauchy pressure, ductile behavior is expected. To verify these predictions, the transport and mechanical properties of amorphous thin films were evaluated. Metallic electrical resistivity and the Seebeck coefficient of −94 µV K"−"1 are obtained, which is consistent with our predictions. As there is no crack formation, these samples can be perceived as ductile. We demonstrate that the power factor can be increased by an order of magnitude, while keeping the thermal fatigue low.

Investigation of transport properties of FeTe compound

Science.gov (United States)

Lodhi, Pavitra Devi; Solanki, Neha; Choudhary, K. K.; Kaurav, Netram

2018-05-01

Transport properties of FeTe parent compound has been investigated by measurements of electrical resistivity, magnetic susceptibility and Seebeck coefficient. The sample was synthesized through a standard solid state reaction route via vacuum encapsulation and characterized by x-ray diffraction, which indicated a tetragonal phase with space group P4/nmm. The parent FeTe compound does not exhibit superconductivity but shows an anomaly in the resistivity measurement at around 67 K, which corresponds to a structural phase transition along with in the vicinity of a magnetic phase transition. In the low temperature regime, Seebeck coefficient, S(T), exhibited an anomalous dip feature and negative throughout the temperature range, indicating electron-like charge carrier conduction mechanism.

A comprehensive study of thermoelectric and transport properties of β-silicon carbide nanowires

Energy Technology Data Exchange (ETDEWEB)

Valentín, L. A.; Betancourt, J.; Fonseca, L. F., E-mail: luis.fonseca@upr.edu [Department of Physics University of Puerto Rico, Rio Piedras (Puerto Rico); Pettes, M. T.; Shi, L. [Department of Mechanical Engineering, The University of Texas at Austin, Texas 78712 (United States); Soszyński, M.; Huczko, A. [Department of Chemistry, Warsaw University, Pasteur 1 Str., 02-093 Warsaw (Poland)

2013-11-14

The temperature dependence of the Seebeck coefficient, the electrical and thermal conductivities of individual β-silicon carbide nanowires produced by combustion in a calorimetric bomb were studied using a suspended micro-resistance thermometry device that allows four-point probe measurements to be conducted on each nanowire. Additionally, crystal structure and growth direction for each measured nanowire was directly obtained by transmission electron microscopy analysis. The Fermi level, the carrier concentration, and mobility of each nanostructure were determined using a combination of Seebeck coefficient and electrical conductivity measurements, energy band structure and transport theory calculations. The temperature dependence of the thermal and electrical conductivities of the nanowires was explained in terms of contributions from boundary, impurity, and defect scattering.

Assessment on thermoelectric power factor in silicon nanowire networks

Energy Technology Data Exchange (ETDEWEB)

Lohn, Andrew J.; Kobayashi, Nobuhiko P. [Baskin School of Engineering, University of California Santa Cruz, CA (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California Santa Cruz, NASA Ames Research Center, Moffett Field, CA (United States); Coleman, Elane; Tompa, Gary S. [Structured Materials Industries, Inc., Piscataway, NJ (United States)

2012-01-15

Thermoelectric devices based on three-dimensional networks of highly interconnected silicon nanowires were fabricated and the parameters that contribute to the power factor, namely the Seebeck coefficient and electrical conductivity were assessed. The large area (2 cm x 2 cm) devices were fabricated at low cost utilizing a highly scalable process involving silicon nanowires grown on steel substrates. Temperature dependence of the Seebeck coefficient was found to be weak over the range of 20-80 C at approximately -400 {mu}V/K for unintentionally doped devices and {+-}50 {mu}V/K for p-type and n-type devices, respectively. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Research Update: Utilizing magnetization dynamics in solid-state thermal energy conversion

Directory of Open Access Journals (Sweden)

Stephen R. Boona

2016-10-01

Full Text Available We review the spin-Seebeck and magnon-electron drag effects in the context of solid-state energy conversion. These phenomena are driven by advective magnon-electron interactions. Heat flow through magnetic materials generates magnetization dynamics, which can strongly affect free electrons within or adjacent to the magnetic material, thereby producing magnetization-dependent (e.g., remnant electric fields. The relative strength of spin-dependent interactions means that magnon-driven effects can generate significantly larger thermoelectric power factors as compared to classical thermoelectric phenomena. This is a surprising situation in which spin-based effects are larger than purely charge-based effects, potentially enabling new approaches to thermal energy conversion.

Electronic structure of copper nitrides as a function of nitrogen content

International Nuclear Information System (INIS)

Gordillo, N.; Gonzalez-Arrabal, R.; Diaz-Chao, P.; Ares, J.R.; Ferrer, I.J.; Yndurain, F.; Agulló-López, F.

2013-01-01

The nitrogen content dependence of the electronic properties for copper nitride thin films with an atomic percentage of nitrogen ranging from 26 ± 2 to 33 ± 2 have been studied by means of optical (spectroscopic ellipsometry), thermoelectric (Seebeck), and electrical resistivity measurements. The optical spectra are consistent with direct optical transitions corresponding to the stoichiometric semiconductor Cu 3 N plus a free-carrier contribution, essentially independent of temperature, which can be tuned in accordance with the N-excess. Deviation of the N content from stoichiometry drives to significant decreases from − 5 to − 50 μV/K in the Seebeck coefficient and to large enhancements, from 10 −3 up to 10 Ω cm, in the electrical resistivity. Band structure and density of states calculations have been carried out on the basis of the density functional theory to account for the experimental results. - Highlights: ► Electronic structure of N-rich Cu 3 N ► Stoichiometric films behave as an intrinsic semiconductor. ► N excess drives to the introduction of a narrow band at the Fermi level. ► Decrease of the Seebeck coefficient when increasing nitrogen content ► Increase of the electrical resistivity when increasing nitrogen content

Thermoelectric potential in UO2 and (U,Pu)O2 and its influence on oxygen migration in presence of a temperature gradient

International Nuclear Information System (INIS)

D'Annucci, F.

1979-09-01

Measurement of the thermoelectric power have been carried out in sintered pellets of uranium-oxide and uranium-plutonium mixed oxides up to 1800 K. For the thermal treatment an inducting furnace is used. The temperatures and the thermoelectric potential are measured with two thermocouples wich are contained in two holes in the lower end of the pellet. During the experiments a temperature difference of 80 K is maintained between the two measuring points. The Seebeck coefficients are calculated from the EMF measurements as a function of temperature and of the O/M ratio. The results show that these oxides have the typical electric properties of a classic semiconductor. The conductivity is of p-type up to a defined temperature wich is a function of the stoichiometry. The Seebeck coefficients are characterized by a defined energy of activation wich is independent from the stochiometry in the regions of hypo- and hyperstochiometric oxides. The thermoelectric forces and the lattice forces drive ions along the temperature gradients. Both forces can be described by the heat of transport of oxygen ions wich contains a thermoelectric and a thermal part. The thermoelectric part of the heat of transport is calculated with the values of the Seebeck coefficients and the contribution to the total heat of transport is discussed. (orig.) [de

The cross-plane thermoelectric properties of p-Ge/Si0.5Ge0.5 superlattices

International Nuclear Information System (INIS)

Ferre Llin, L.; Samarelli, A.; Weaver, J. M. R.; Dobson, P. S.; Paul, D. J.; Cecchi, S.; Chrastina, D.; Isella, G.; Etzelstorfer, T.; Stangl, J.; Müller Gubler, E.

2013-01-01

The electrical conductivity, Seebeck coefficients, and thermal conductivities of a range of p-type Ge/Si 0.5 Ge 0.5 superlattices designed for thermoelectric generation and grown by low energy plasma enhanced chemical vapor deposition have been measured using a range of microfabricated test structures. For samples with barriers around 0.5 nm in thickness, the measured Seebeck coefficients were comparable to bulk p-SiGe at similar doping levels suggesting the holes see the material as a random bulk alloy rather than a superlattice. The Seebeck coefficients for Ge quantum wells of 2.85 ± 0.85 nm increased up to 533 ± 25 μV/K as the doping was reduced. The thermal conductivities are between 4.5 to 6.0 Wm −1 K −1 which are lower than comparably doped bulk Si 0.3 Ge 0.7 but higher than undoped Si/Ge superlattices. The highest measured figure of merit ZT was 0.080 ± 0.011 obtained for the widest quantum well studied. Analysis suggests that interface roughness is presently limiting the performance and a reduction in the strain between the quantum wells and barriers has the potential to improve the thermoelectric performance

Sputtered type s thermocouples on quartz glass substrates

International Nuclear Information System (INIS)

Sopko, B.; Vlk, J.; Chren, D.; Sopko, V.; Dammer, J.; Mengler, J.; Hynek, V.

2011-01-01

The work deals with the development of thin film thermocouples and their practical use. The principle of measuring planar thin film thermocouples is the same as for conventional thermocouples and is based on the thermoelectric effect, which named after its discoverer, Seebeck. Seebeck effect is direct conversion of temperature differences to electric voltage. In different applications it is necessary to use temperature sensors with high spatial resolution (with the placement of several measured points on the segment of length 1 mm) and short response time. For this application are currently used planar thermocouples with important advantage in production price and reproducible production. The innovative potential of thin-film thermocouples are to be found mainly in: 1 st use of technology in thin layers, unlike the already mature technologies applied in the production of conventional thermocouple probes are capable of further improvement with the usage of new substrate materials, modified methods for creating electrical contacts to the new thermocouple configuration and adhesive and protective layers, 2 nd in saving precious and rare metals, 3 rd decreasing the thickness of the layers and reducing the overall size of thermo probe. Measuring the temperature of molten steel, leading to a general loss of strength and the subsequent destruction of the probe. Here exhibited the highest resistance of quartz plates used in thin film substrates thermocouples. (authors)

Thermoelectricity in liquid crystals

Science.gov (United States)

Mohd Said, Suhana; Nordin, Abdul Rahman; Abdullah, Norbani; Balamurugan, S.

2015-09-01

The thermoelectric effect, also known as the Seebeck effect, describes the conversion of a temperature gradient into electricity. A Figure of Merit (ZT) is used to describe the thermoelectric ability of a material. It is directly dependent on its Seebeck coefficient and electrical conductivity, and inversely dependent on its thermal conductivity. There is usually a compromise between these parameters, which limit the performance of thermoelectric materials. The current achievement for ZT~2.2 falls short of the expected threshold of ZT=3 to allow its viability in commercial applications. In recent times, advances in organic thermoelectrics been significant, improving by over 3 orders of magnitude over a period of about 10 years. Liquid crystals are newly investigated as candidate thermoelectric materials, given their low thermal conductivity, inherent ordering, and in some cases, reasonable electrical conductivity. In this work the thermoelectric behaviour of a discotic liquid crystal, is discussed. The DLC was filled into cells coated with a charge injector, and an alignment of the columnar axis perpendicular to the substrate was allowed to form. This thermoelectric behavior can be correlated to the order-disorder transition. A reasonable thermoelectric power in the liquid crystal temperature regime was noted. In summary, thermoelectric liquid crystals may have the potential to be utilised in flexible devices, as a standalone power source.

Renewable energy in focus: In5Se5Br, a solid material with promising thermoelectric properties for industrial applications

International Nuclear Information System (INIS)

Xhaxhiu, Kledi; Kvarnström, Carita; Damlin, Pia; Bente, Klaus

2014-01-01

Highlights: • In 5 Se 5 Br contains indium simultaneously in three different oxidation states. • Bulk sample of In 5 Se 5 Br shows n-type conductivity. • The Seebeck voltage increases linearly with the temperature difference increase. • In bulk In 5 Se 5 Br the resistivity oscillates between 2.6 MΩ and 23 MΩ. • DTA and HT-powder XRD data show incongruent melting of the compound. - Abstract: We obtained via solid state synthesis needle-shaped crystals of In 5 Se 5 Br crystallizing in the space group Pmn2 1 and containing indium simultaneously in three different oxidation states: In + , formal In 2+ and In 3+ . Bulk sample of In 5 Se 5 Br shows n-type conductivity and linear increase of Seebeck voltage with the temperature difference increase. Seebeck voltage of approx. 720 mV is recorded at a temperature difference of 80 K, corresponding to a Seebeck coefficient −8900 μV/K. A voltage increase up to 250 mV is recorded within 10 min upon application of a 27 K temperature difference between the contacts. On-off switching of the heating source unveils repeatable results. Linear I–U behavior with a resistivity of 2.32 × 10 11 Ω is observable for individual needles of In 5 Se 5 Br. In bulk In 5 Se 5 Br the resistivity oscillates between 2.6 MΩ and 23 MΩ. DTA and HT-powder XRD data show incongruent melting to InBr, InSe and In 2 Se 3 at 805 K. The ternary compound expands 1.02% along [0 1 0] showing a coefficient of thermal expansion α b = 2.3(4) × 10 −5 K −1 . Lower expansions of 0.6% and 0.16% along a and c axes corresponding to mean coefficients of thermal expansion of α a ¯ = 1.3(1) × 10 −5 K −1 , α c ¯ = 4.4(5) × 10 −6 K −1 are observed. Thin layer growing of In 5 Se 5 Br on glass substrate with targeted doping/substitutions can improve the sample conductivity, increase the Seebeck coefficient and lower the thermal conductivity making In 5 Se 5 Br a good alternative material for industrial thermoelectric applications

Aplikasi Termoelektrik Generator Sebagai Sumber Energi Listrik Dengan Lensa Fresnel Sebagai Kolektor Panas Matahari

OpenAIRE

Simanjuntak, Jerri

2015-01-01

It has been designed a thermoelectric generator to produce electricity. By utilizing solar heat as the hot side of the peltier element. Fresnel Lens is used to collect sunlight towards the aluminium plate which is directly on the hot side of the peltier element. The working principle of thermoelectric generator according to the Seebeck effect, where the presence of the temperature difference between the hot side and a cold side peltier there will be a flow of current to produce a voltage.Test...

Microscopic Theory of Magnon-Drag Thermoelectric Transport in Ferromagnetic Metals

OpenAIRE

Miura, Daisuke; Sakuma, Akimasa

2012-01-01

A theoretical study of the magnon-drag Peltier and Seebeck effects in ferromagnetic metals is presented. A magnon heat current is described perturbatively from the microscopic viewpoint with respect to electron--magnon interactions and the electric field. Then, the magnon-drag Peltier coefficient $\\Pi_\\MAG$ is obtained as the ratio between the magnon heat current and the electric charge current. We show that $\\Pi_\\MAG=C_\\MAG T^{5/2}$ at a low temperature $T$; that the coefficient $C_\\MAG$ is ...

Effects of MeV Si ions bombardment on the thermoelectric generator from SiO{sub 2}/SiO{sub 2} + Cu and SiO{sub 2}/SiO{sub 2} + Au nanolayered multilayer films

Energy Technology Data Exchange (ETDEWEB)

Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Chacha, J., E-mail: chacha_john79@hotmail.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Smith, C., E-mail: cydale@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States); Pugh, M., E-mail: marcuspughp@yahoo.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Colon, T. [Department of Mechanical Engineering, Alabama A and M University, Normal, AL (United States); Heidary, K., E-mail: kaveh.heidary@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Johnson, R.B., E-mail: barry@w4wb.com [Department of Physics, Alabama A and M University, Normal, AL (United States); Ila, D., E-mail: ila@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States)

2011-12-15

The defects and disorder in the thin films caused by MeV ions bombardment and the grain boundaries of these nanoscale clusters increase phonon scattering and increase the chance of an inelastic interaction and phonon annihilation. We prepared the thermoelectric generator devices from 100 alternating layers of SiO{sub 2}/SiO{sub 2} + Cu multi-nano layered superlattice films at the total thickness of 382 nm and 50 alternating layers of SiO{sub 2}/SiO{sub 2} + Au multi-nano layered superlattice films at the total thickness of 147 nm using the physical vapor deposition (PVD). Rutherford Backscattering Spectrometry (RBS) and RUMP simulation have been used to determine the stoichiometry of the elements of SiO{sub 2}, Cu and Au in the multilayer films and the thickness of the grown multi-layer films. The 5 MeV Si ions bombardments have been performed using the AAMU-Center for Irradiation of Materials (CIM) Pelletron ion beam accelerator to make quantum (nano) dots and/or quantum (quantum) clusters in the multilayered superlattice thin films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity. To characterize the thermoelectric generator devices before and after Si ion bombardments we have measured Seebeck coefficient, cross-plane electrical conductivity, and thermal conductivity in the cross-plane geometry for different fluences.

Semi-metallic polymers

DEFF Research Database (Denmark)

Bubnova, Olga; Khan, Zia Ullah; Wang, Hui

2014-01-01

Polymers are lightweight, flexible, solution-processable materials that are promising for low-cost printed electronics as well as for mass-produced and large-area applications. Previous studies demonstrated that they can possess insulating, semiconducting or metallic properties; here we report...... that polymers can also be semi-metallic. Semi-metals, exemplified by bismuth, graphite and telluride alloys, have no energy bandgap and a very low density of states at the Fermi level. Furthermore, they typically have a higher Seebeck coefficient and lower thermal conductivities compared with metals, thus being...... a Fermi glass to a semi-metal. The high Seebeck value, the metallic conductivity at room temperature and the absence of unpaired electron spins makes polymer semi-metals attractive for thermoelectrics and spintronics....

Ab Initio Calculations of Transport Properties of Vanadium Oxides

Science.gov (United States)

Lamsal, Chiranjivi; Ravindra, N. M.

2018-04-01

The temperature-dependent transport properties of vanadium oxides have been studied near the Fermi energy using the Kohn-Sham band structure approach combined with Boltzmann transport equations. V2O5 exhibits significant thermoelectric properties, which can be attributed to its layered structure and stability. Highly anisotropic electrical conduction in V2O5 is clearly manifested in the calculations. Due to specific details of the band structure and anisotropic electron-phonon interactions, maxima and crossovers are also seen in the temperature-dependent Seebeck coefficient of V2O5. During the phase transition of VO2, the Seebeck coefficient changes by 18.9 µV/K, which is close to (within 10% of) the observed discontinuity of 17.3 µV/K.

The effect of structural vacancies on the thermoelectric properties of (Cu₂Te){sub 1–x}(Ga₂Te₃)_x

Energy Technology Data Exchange (ETDEWEB)

Ye, Zuxin; Young Cho, Jung; Tessema, Misle M. [Optimal Inc., Plymouth Township, MI 48170 (United States); Salvador, James R., E-mail: james.salvador@gm.com [GM Global R and D, Warren, MI 48090 (United States); Waldo, Richard A. [GM Global R and D, Warren, MI 48090 (United States); Wang, Hsin; Cai, Wei [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

2013-05-01

We have studied the effects of structural vacancies on the thermoelectric properties of the ternary compounds (Cu₂Te)_1–x(Ga₂Te₃)_x (x=0.5, 0.55, 0.571, 0.6, 0.625, 0.667 and 0.75), which are solid solutions found in the pseudo-binary phase diagram for Cu₂Te and Ga₂Te₃, and possesses tunable structural vacancy concentrations. This materials system is not suitable due to the cost and scarcity of the constituent elements, but the vacancy behavior is well understood and will provide a valuable test case for other systems more suitable from the standpoint of cost and abundance of raw materials, which also possesses these vacancy features, but whose structural characterization is lacking at this stage. We find that the nominally defect free phase CuGaTe₂ possess the highest ZT (ZT=S²T/ρκ, where S is the Seebeck coefficient and ρ is the electrical resistivity κ is the thermal conductivity and T is the absolute temperature) which approaches 1 at 840 K and seems to continuously increase above this temperature. This result is due to the unexpectedly low thermal conductivity found for this material at high temperature. The low thermal conductivity was caused by strong Umklapp (thermally resistive scattering processes involving three phonons) phonon scattering. We find that due to the coincidentally strong scattering of carriers by the structural defects that higher concentrations of these features lead to poor electrical transport properties and decreased ZT. - Graphical abstract: Thermal conductivity and zT as a function of temperature for a series of compounds of the type (Cu₂Te)_1–x(Ga₂Te₃)x (x=0.5, 0.55, 0.571, 0.6, 0.625, 0.667 and 0.75). Highlights: • All the samples show p-type semiconducting behavior in the temperature dependence of the Seebeck and Hall coefficients. • The increased carrier concentration and the introduction of vacancies diminish the carrier mobility and power factor. • The low

Effect of nanostructure on thermoelectric properties of La0.7Sr0.3MnO3 in 300–600 K temperature range

Science.gov (United States)

Singh, Saurabh; Srivastav, Simant Kumar; Patel, Ashutosh; Chatterjee, Ratnamala; Pandey, Sudhir K.

2018-05-01

In oxide materials, nanostructuring effect has been found a very promising approach for the enhancement of figure-of-merit, ZT. In the present work, we have synthesized La0.7Sr0.3MnO3 (LSMO) compound using sol-gel method and samples of crystallite size of ∼20, ∼41, and ∼49 nm were obtained by giving different heat treatment. Seebeck coefficient (α), electrical resistivity (ρ), and thermal conductivity (κ) measurements were carried out in 300–600 K temperature range. The systematic change in the values of α from ∼‑19 μV/K to ∼‑24 μV/K and drastic reduction in the values of κ from ∼0.88 W/mK to ∼0.23 W/mK are observed as crystallite size is reduced from 49 nm to 20 nm at ∼600 K. Also, fall in the values of ρ in the paramagnetic (PM) insulator phase (400–600 K) are effectively responsible for the increasing trend in the values of ZT at high temperature. For the crystallite size of 41 nm, the value of ZT at 600 K was found to be ∼0.017.

Theory of Ettinghausen cooling below 120 K

International Nuclear Information System (INIS)

Williams, L.R.; Adams, F.W.; Horst, R.B.; Ichiki, S.K.

1984-01-01

The Ettingshausen effect can be used for cooling, and in principle the Nernst effect can be used for power generation. These effects are the magnetic field analogs of the Peltier and Seebeck effects. The performance equations for an Ettingshausen cooler are developed and the analogy to the Peltier cooler shown. The material requirements to maximize performance are presented and a candidate material system, the BiSb alloy system, is discussed. The figures of merit Z 31 T determined from low-magneticfield transport parameter measurements and from highmagnetic-field transport coefficient measurements are compared. This comparison indicates that the presence of impurities degrades the high-magneticfield results. This degradation results in departures from predicted behaviour

Scanning thermal microscopy of Bi{sub 2}Te{sub 3} and Yb{sub 0.19}Co{sub 4}Sb{sub 12} thermoelectric films

Energy Technology Data Exchange (ETDEWEB)

Zeipl, Radek; Remsa, Jan; Kocourek, Tomas [Institute of Physics ASCR v.v.i., Prague (Czech Republic); Jelinek, Miroslav [Institute of Physics ASCR v.v.i., Prague (Czech Republic); Czech Technical University in Prague, Faculty of Biomedical Engineering, Kladno (Czech Republic); Vanis, Jan [Institute of Physics ASCR v.v.i., Prague (Czech Republic); Institute of Photonics and Electronics ASCR v.v.i., Prague (Czech Republic); Navratil, Jiri [Institute of Macromolecular Chemistry ASCR v.v.i., Prague (Czech Republic)

2016-04-15

Thermal conductivity of thermoelectric Bi{sub 2}Te{sub 3} and Yb{sub 0.19}Co{sub 4}Sb{sub 12} thin nanolayers of different thicknesses prepared by pulsed laser deposition on Si (100) substrates was studied by a scanning thermal microscope working in AC current pulse mode. A sensitivity of the approach is demonstrated on the steep Si substrate-layer boundary made by a Ga+ focused ion beam technique. Transport and thermoelectric properties such as in-plane electrical resistivity and the Seebeck coefficient were studied in temperature range from room temperature up to 200 C. The room temperature thermal conductivity of the layers was estimated from thermoelectric figure of merit that was measured by the Harman technique, in which parameters related to electrical conductivity, Seebeck coefficient and thermal conductivity are measured at the same place and at the same time with electrical current flowing through the layer. For Yb{sub 0.19}Co{sub 4}Sb{sub 12} and Bi{sub 2}Te{sub 3} layers, we observed room temperature electrical resistivity of about 7 and 1 mΩcm, the Seebeck coefficient of -112 and -61μVK{sup -1}, thermoelectric figure of merit about 0.04 and 0.13 and we estimated thermal conductivity of about 1.3 and 0.9 WK{sup -1}m{sup -1}, respectively. (orig.)

Measurement of the transport properties of (Sb2Te3)sub(0.75)(Bi2Te3)sub(0.25) solid solution with addition of Tl2Te3

International Nuclear Information System (INIS)

Sher, A.

1983-03-01

The thermoelectric parameters of the solid solution (Sb 3 Te 3 )sub(0.75)(Bi 2 Te 3 )sub(0.25) in the presence of a low concentration of Tl 3 Te 3 were examined. The electrical conductivity, thermal conductivity, Seebeck coefficient and Hall constant were measured on samples which represent the upper parts of the ingots, in the temperature range 10K-300K. The lattice thermal conductivity, carrier, mobility, effective mass and carrier concentration were calculated from the measured parameters. The variation of the carrier mobility with temperature was similar in all the measured samples. At temperatures higher than 80K the mobility was proportional to Tsup(-33/2). At lower temperatures the mobility approached a saturation value which decreased with increasing Tl 2 Te 3 concentration. At about room temperature, the mobility was already not proportional to Tsup(x). Increasing the Tl 2 Te 3 or Sb 2 Se 3 concentration resulted in a lower deviation from the Tsup(x) dependence and a slower increase in the lattice thermal conductivity with decreasing temperature. Addition of Tl 2 Te 3 to the solid solution resulted in minor improvement in the thermoelectric quality which depends on the mobility, effective mass and lattice thermal conductivity. The thermoelectric properties were nearly the same as those obtained by addition of Sb 2 Se 3 to the solid solution. The addition of Tl 2 Te 3 annuled an effect of increasing carrier concentration with decreasing temperature. It resulted in a slower decrease in the Seebeck coefficient. (H.K.)

Thermoelectric Energy Conversion: Materials, Devices, and Systems

International Nuclear Information System (INIS)

Chen, Gang

2015-01-01

This paper will present a discussion of challenges, progresses, and opportunities in thermoelectric energy conversion technology. We will start with an introduction to thermoelectric technology, followed by discussing advances in thermoelectric materials, devices, and systems. Thermoelectric energy conversion exploits the Seebeck effect to convert thermal energy into electricity, or the Peltier effect for heat pumping applications. Thermoelectric devices are scalable, capable of generating power from nano Watts to mega Watts. One key issue is to improve materials thermoelectric figure- of-merit that is linearly proportional to the Seebeck coefficient, the square of the electrical conductivity, and inversely proportional to the thermal conductivity. Improving the figure-of-merit requires good understanding of electron and phonon transport as their properties are often contradictory in trends. Over the past decade, excellent progresses have been made in the understanding of electron and phonon transport in thermoelectric materials, and in improving existing and identify new materials, especially by exploring nanoscale size effects. Taking materials to real world applications, however, faces more challenges in terms of materials stability, device fabrication, thermal management and system design. Progresses and lessons learnt from our effort in fabricating thermoelectric devices will be discussed. We have demonstrated device thermal-to-electrical energy conversion efficiency ∼10% and solar-thermoelectric generator efficiency at 4.6% without optical concentration of sunlight (Figure 1) and ∼8-9% efficiency with optical concentration. Great opportunities exist in advancing materials as well as in using existing materials for energy efficiency improvements and renewable energy utilization, as well as mobile applications. (paper)

Thermoelectric effects of amorphous Ga-Sn-O thin film

Science.gov (United States)

Matsuda, Tokiyoshi; Uenuma, Mutsunori; Kimura, Mutsumi

2017-07-01

The thermoelectric effects of an amorphous Ga-Sn-O (a-GTO) thin film have been evaluated as a physical parameter of a novel oxide semiconductor. Currently, a-GTO thin films are greatly desired not only because they do not contain rare metals and are therefore free from problems on the exhaustion of resources and the increase in cost but also because their initial characteristics and performance stabilities are excellent when they are used in thin-film transistors. In this study, an a-GTO thin film was deposited on a quartz substrate by RF magnetron sputtering and postannealing was performed in air at 350 °C for 1 h using an annealing furnace. The Seebeck coefficient and electrical conductivity of the a-GTO thin film were -137 µV/K and 31.8 S/cm at room temperature, and -183 µV/K and 43.8 S/cm at 397 K, respectively, and as a result, the power factor was 1.47 µW/(cm·K2) at 397 K; these values were roughly as high as those of amorphous In-Ga-Zn-O (a-IGZO) thin films. Therefore, a-GTO thin films will be a candidate material for thermoelectric devices fabricated in a large area at a low cost by controlling the carrier mobility, carrier density, device structures, and so forth.

Thermoelectric Properties of Nanograined Si-Ge-Au Thin Films Grown by Molecular Beam Deposition

Science.gov (United States)

Nishino, Shunsuke; Ekino, Satoshi; Inukai, Manabu; Omprakash, Muthusamy; Adachi, Masahiro; Kiyama, Makoto; Yamamoto, Yoshiyuki; Takeuchi, Tsunehiro

2018-06-01

Conditions to achieve extremely large Seebeck coefficient and extremely small thermal conductivity in Si-Ge-Au thin films formed of nanosized grains precipitated in amorphous matrix have been investigated. We employed molecular beam deposition to prepare Si1- x Ge x Au y thin films on sapphire substrate. The deposited films were annealed under nitrogen gas atmosphere at 300°C to 500°C for 15 min to 30 min. Nanocrystals dispersed in amorphous matrix were clearly observed by transmission electron microscopy. We did not observe anomalously large Seebeck coefficient, but very low thermal conductivity of nearly 1.0 W K-1 m-1 was found at around 0.2 Si-Ge bulk material for which dimensionless figure of merit of ZT ≈ 1 was reported at high temperature.

Monitoring the aging of pressure vessel steels by TEP measurements: Advantages and current limitations of the method

International Nuclear Information System (INIS)

Kleber, X.; Saillet, S.

2011-01-01

The TEP (Thermoelectric Power or Seebeck coefficient) characterizes the ability of a material to generate an electrical potential difference when the material is subjected to a heat flux. It can be defined from the Seebeck effect, which manifests itself in a circuit formed by two different metals subjected to a temperature gradient. The origin of the thermoelectric power is, as the resistivity, due to electronic phenomena occurring at the atomic scale in relation to the crystallographic structure of the material. TEP measurements are used to characterize small microstructural changes at the scale of crystal defects. The high sensitivity of TEP makes it an excellent probe able of detecting small changes in the microstructural state, including precipitation, dissolution of alloying elements, hardening and recovery after deformation. It has been shown recently that the TEP of pressure vessels steels was sensitive to irradiation, making this measurement technique a potential candidate for monitoring the aging of the pressure vessel steel. However, the first measurements on Charpy specimens of the EDF monitoring program (Pressure Vessel Surveillance Program) showed a strong negative effect of specimen geometry on the accuracy that can be achieved. In this paper we show what the origins of these inaccuracies are. From numerical simulation and finite element model, we describe the roles of the thermal contact resistance as well as the influence of the geometry of the blocks device. A model is proposed to overcome these negative effects. We also show the effect of the presence of heterogeneities in the material on the TEP measurement, and the importance of their localization. Finally, solutions are proposed to improve the device for measuring TEP on PVSP Charpy specimens. (authors)

Nano-crystalline Ag–PbTe thermoelectric thin films by a multi-target PLD system

Energy Technology Data Exchange (ETDEWEB)

Cappelli, E., E-mail: emilia.cappelli@ism.cnr.it [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Bellucci, A. [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Dip. Fisica, Un. Roma Sapienza, Piazzale Aldo Moro 2, 00185 Rome (Italy); Medici, L. [CNR-IMAA, Tito Scalo, 85050 Potenza (Italy); Mezzi, A.; Kaciulis, S. [CNR-ISMN, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Fumagalli, F.; Di Fonzo, F. [Center Nano Science Technology @Polimi, I.I.T., Via Pascoli 70/3, 20133 Milano (Italy); Trucchi, D.M. [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy)

2015-05-01

Highlights: • Thermoelectric PbTe thin films, with increasing Ag percentage, were deposited by PLD. • Almost stoichiometric PbTe (Ag doped) films were grown, as verified by XPS analysis. • GI-XRD established the formation of cubic PbTe, with nano-metric structure (∼35 nm). • Surface resistivity shows an increase in conductivity, with increasing Ag doping. • From Seebeck values and XPS depth analysis, 10% Ag seems to be the solubility limit. - Abstract: It has been evaluated the ability of ArF pulsed laser ablation to grow nano-crystalline thin films of high temperature PbTe thermoelectric material, and to obtain a uniform and controlled Ag blending, through the entire thickness of the film, using a multi-target system in vacuum. The substrate used was a mirror polished technical alumina slab. The increasing atomic percentage of Ag effect on physical–chemical and electronic properties was evaluated in the range 300–575 K. The stoichiometry and the distribution of the Ag component, over the whole thickness of the samples deposited, have been studied by XPS (X-ray photoelectron spectroscopy) and corresponding depth profiles. The crystallographic structure of the film was analyzed by grazing incidence X-ray diffraction (GI-XRD) system. Scherrer analysis for crystallite size shows the presence of nano-structures, of the order of 30–35 nm. Electrical resistivity of the samples, studied by the four point probe method, as a function of increasing Ag content, shows a typical semi-conductor behavior. From conductivity values, carrier concentration and Seebeck parameter determination, the power factor of deposited films was calculated. Both XPS, Hall mobility and Seebeck analysis seem to indicate a limit value to the Ag solubility of the order of 5%, for thin films of ∼200 nm thickness, deposited at 350 °C. These data resulted to be comparable to theoretical evaluation for thin films but order of magnitude lower than the corresponding bulk materials.

Thermoelectric properties of bismuth antimony tellurium thin films through bilayer annealing prepared by ion beam sputtering deposition

Energy Technology Data Exchange (ETDEWEB)

Zheng, Zhuang-hao [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Fan, Ping, E-mail: fanping308@126.com [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Luo, Jing-ting [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Cai, Xing-min; Liang, Guang-xing; Zhang, Dong-ping [College of Physics Science and Technology, Shenzhen University, 518060 (China); Ye, Fan [Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China)

2014-07-01

Bismuth antimony tellurium is one of the most important tellurium-based materials for high-efficient thermoelectric application. In this paper, ion beam sputtering was used to deposit Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} bilayer thin films on borosilicate substrates at room-temperature. Then the bismuth antimony tellurium thin films were synthesized via post thermal treatment of the Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} bilayer thin films. The effect of annealing temperature and compositions on the thermoelectric properties of the thin films was investigated. After the thin films were annealed from 150 °C to 350 °C for 1 h in the high vacuum condition, the Seebeck coefficient changed from a negative sign to a positive sign. The X-ray diffraction results showed that the synthesized tellurium-based thermoelectric thin film exhibited various alloys phases, which contributed different thermoelectricity conductivity to the synthesized thin film. The overall Seebeck coefficient of the synthesized thin film changed from negative sign to positive sign, which was due to the change of the primary phase of the tellurium-based materials at different annealing conditions. Similarly, the thermoelectric properties of the films were also associated with the grown phase. High-quality thin film with the Seebeck coefficient of 240 μV K{sup −1} and the power factor of 2.67 × 10{sup −3} Wm{sup −1} K{sup −2} showed a single Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} phase when the Sb/Te thin film sputtering time was 40 min. - Highlights: • Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} thermoelectric thin films synthesized via bilayer annealing • The film has single Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} phase with best thermoelectric performance. • The film has high thermoelectric properties comparable with other best results.

Polycrystalline Mg2Si thin films: A theoretical investigation of their electronic transport properties

International Nuclear Information System (INIS)

Balout, H.; Boulet, P.; Record, M.-C.

2015-01-01

The electronic structures and thermoelectric properties of a polycrystalline Mg 2 Si thin film have been investigated by first-principle density-functional theory (DFT) and Boltzmann transport theory calculations within the constant-relaxation time approximation. The polycrystalline thin film has been simulated by assembling three types of slabs each having the orientation (001), (110) or (111) with a thickness of about 18 Å. The effect of applying the relaxation procedure to the thin film induces disorder in the structure that has been ascertained by calculating radial distribution functions. For the calculations of the thermoelectric properties, the energy gap has been fixed at the experimental value of 0.74 eV. The thermoelectric properties, namely the Seebeck coefficient, the electrical conductivity and the power factor, have been determined at three temperatures of 350 K, 600 K and 900 K with respect to both the energy levels and the p-type and n-type doping levels. The best Seebeck coefficient is obtained at 350 K: the S yy component of the tensor amounts to about ±1000 μV K −1 , depending on the type of charge carriers. However, the electrical conductivity is much too small which results in low values of the figure of merit ZT. Structure–property relationship correlations based on directional radial distribution functions allow us to tentatively draw some explanations regarding the anisotropy of the electrical conductivity. Finally, the low ZT values obtained for the polycrystalline Mg 2 Si thin film are paralleled with those recently reported in the literature for bulk chalcogenide glasses. - Graphical abstract: Structure of the polycrystalline thin film of Mg 2 Si. - Author-Highlights: • Polycrystalline Mg 2 Si film has been modelled by DFT approach. • Thermoelectric properties have been evaluated by semi-classical Boltzmann theory. • The structure was found to be slightly disordered after relaxation. • The highest value of Seebeck

High – temperature thermoelectric properties of Hg – doped CuInTe2

Czech Academy of Sciences Publication Activity Database

Kucek, V.; Drašar, Č.; Kašparová, J.; Plecháček, T.; Navrátil, Jiří; Vlček, Milan; Beneš, L.

2015-01-01

Roč. 118, č. 12 (2015), 125105-1 - 125105-7 ISSN 0021-8979 Institutional support: RVO:61389013 Keywords : thermoelectric materials * Hall coefficient * Seebeck coefficient Subject RIV: CA - Inorganic Chemistry Impact factor: 2.101, year: 2015

Spin Caloritronic Transport of 1,3,5-Triphenylverdazyl Radical

International Nuclear Information System (INIS)

Wu Qiu-Hua; Zhao Peng; Liu De-Sheng

2016-01-01

We investigate theoretically the spin caloritronic transport properties of a stable 1,3,5-triphenylverdazyl (TPV) radical sandwiched between Au electrodes through different connection fashions. Obvious spin Seebeck effect can be observed in the para-connection fashion. Furthermore, a pure spin current and a completely spin-polarized current can be realized by tuning the gate voltage. Furthermore, a 100% spin polarization without the need of gate voltage can be obtained in the meta-connection fashion. These results demonstrate that TPV radical is a promising material for spin caloritronic and spintronic applications. (paper)

Spin-Swapping Transport and Torques in Ultrathin Magnetic Bilayers

KAUST Repository

Saidaoui, Hamed Ben Mohamed

2016-07-12

Planar spin transport in disordered ultrathin magnetic bilayers comprising a ferromagnet and a normal metal (typically used for spin pumping, spin Seebeck and spin-orbit torque experiments) is investigated theoretically. Using a tight-binding model that puts the extrinsic spin Hall effect and spin swapping on equal footing, we show that the nature of spin-orbit coupled transport dramatically depends on the ratio between the layer thickness d and the mean free path λ. While the spin Hall effect dominates in the diffusive limit (d≫λ), spin swapping dominates in the Knudsen regime (d≲λ). A remarkable consequence is that spin swapping induces a substantial fieldlike torque in the Knudsen regime.

Spin-Swapping Transport and Torques in Ultrathin Magnetic Bilayers

KAUST Repository

Saidaoui, Hamed Ben Mohamed; Manchon, Aurelien

2016-01-01

Planar spin transport in disordered ultrathin magnetic bilayers comprising a ferromagnet and a normal metal (typically used for spin pumping, spin Seebeck and spin-orbit torque experiments) is investigated theoretically. Using a tight-binding model that puts the extrinsic spin Hall effect and spin swapping on equal footing, we show that the nature of spin-orbit coupled transport dramatically depends on the ratio between the layer thickness d and the mean free path λ. While the spin Hall effect dominates in the diffusive limit (d≫λ), spin swapping dominates in the Knudsen regime (d≲λ). A remarkable consequence is that spin swapping induces a substantial fieldlike torque in the Knudsen regime.

Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical Properties

Directory of Open Access Journals (Sweden)

Sarita Boolchandani

2018-01-01

Full Text Available The indium selenium (InSe bilayer thin films of various thickness ratios, InxSe(1-x (x = 0.25, 0.50, 0.75, were deposited on a glass substrate keeping overall the same thickness of 2500 Ǻ using thermal evaporation method under high vacuum atmosphere. Electrical, optical, and structural properties of these bilayer thin films have been compared before and after thermal annealing at different temperatures. The structural and morphological characterization was done using XRD and SEM, respectively. The optical bandgap of these thin films has been calculated by Tauc’s relation that varies within the range of 1.99 to 2.05 eV. A simple low-cost thermoelectrical power measurement setup is designed which can measure the Seebeck coefficient “S” in the vacuum with temperature variation. The setup temperature variation is up to 70°C. This setup contains a Peltier device TEC1-12715 which is kept between two copper plates that act as a reference metal. Also, in the present work, the thermoelectric power of indium selenide (InSe and aluminum selenide (AlSe bilayer thin films prepared and annealed in the same way is calculated. The thermoelectric power has been measured by estimating the Seebeck coefficient for InSe and AlSe bilayer thin films. It was observed that the Seebeck coefficient is negative for InSe and AlSe thin films.

Enhanced high temperature thermoelectric response of sulphuric acid treated conducting polymer thin films

KAUST Repository

Sarath Kumar, S. R.; Kurra, Narendra; Alshareef, Husam N.

2015-01-01

We report the high temperature thermoelectric properties of solution processed pristine and sulphuric acid treated poly(3, 4-ethylenedioxythiophene):poly(4-styrenesulfonate) (or PEDOT:PSS) films. The acid treatment is shown to simultaneously enhance the electrical conductivity and Seebeck coefficient of the metal-like films, resulting in a five-fold increase in thermoelectric power factor (0.052 W/m. K ) at 460 K, compared to the pristine film. By using atomic force micrographs, Raman and impedance spectra and using a series heterogeneous model for electrical conductivity, we demonstrate that acid treatment results in the removal of PSS from the films, leading to the quenching of accumulated charge-induced energy barriers that prevent hopping conduction. The continuous removal of PSS with duration of acid treatment also alters the local band structure of PEDOT:PSS, resulting in simultaneous enhancement in Seebeck coefficient.

Thermoelectric Properties in the TiO2/SnO2 System

Science.gov (United States)

Dynys, F.; Sayir, A.; Sehirlioglu, A.; Berger, M.

2009-01-01

Nanotechnology has provided a new interest in thermoelectric technology. A thermodynamically driven process is one approach in achieving nanostructures in bulk materials. TiO2/SnO2 system exhibits a large spinodal region with exceptional stable phase separated microstructures up to 1400 C. Fabricated TiO2/SnO2 nanocomposites exhibit n-type behavior with Seebeck coefficients greater than -300 .V/K. Composites exhibit good thermal conductance in the range of 7 to 1 W/mK. Dopant additions have not achieved high electrical conductivity (<1000 S/m). Formation of oxygen deficient composites, TixSn1-xO2-y, can change the electrical conductivity by four orders of magnitude. Achieving higher thermoelectric ZT by oxygen deficiency is being explored. Seebeck coeffcient, thermal conductivity, electrical conductance and microstructure will be discussed in relation to composition and doping.

Electronic structure and thermoelectric transport properties of the golden Th2S3-type Ti2O3 under pressure

Directory of Open Access Journals (Sweden)

Bin Xu

2016-05-01

Full Text Available A lot of physical properties of Th2S3-type Ti2O3 have investigated experimentally, hence, we calculated electronic structure and thermoelectric transport properties by the first-principles calculation under pressure. The increase of the band gaps is very fast from 30GP to 35GP, which is mainly because of the rapid change of the lattice constants. The total density of states becomes smaller with increasing pressure, which shows that Seebeck coefficient gradually decreases. Two main peaks of Seebeck coefficients always decrease and shift to the high doping area with increasing temperature under pressure. The electrical conductivities always decrease with increasing temperature under pressure. The electrical conductivity can be improved by increasing pressure. Electronic thermal conductivity increases with increasing pressure. It is noted that the thermoelectric properties is reduced with increasing temperature.

Transport, Structural and Mechanical Properties of Quaternary FeVTiAl Alloy

Science.gov (United States)

Bhat, Tahir Mohiuddin; Gupta, Dinesh C.

2016-11-01

The electronic, structural, magnetic and transport properties of FeVTiAl quaternary alloy have been investigated within the framework of density functional theory. The material is a completely spin-polarized half-metallic ferromagnet in its ground state with F-43m structure. The structural stability was further confirmed by elastic constants in the cubic phase with high Young's modulus and brittle nature. The present study predicts an energy band gap of 0.72 eV in a localized minority spin channel at equilibrium lattice parameter of 6.00 Å. The transport properties of the material are discussed based on the Seebeck coefficient, and electrical and thermal conductivity coefficients. The alloy presents large values of Seebeck coefficients, ~39 μV K-1 at room temperature (300 K), and has an excellent thermoelectric performance with ZT = ~0.8.

Systems and methods for the synthesis of high thermoelectric performance doped-SnTe materials

Science.gov (United States)

Ren, Zhifeng; Zhang, Qian; Chen, Gang

2018-02-27

A thermoelectric composition comprising tin (Sn), tellurium (Te) and at least one dopant that comprises a peak dimensionless figure of merit (ZT) of 1.1 and a Seebeck coefficient of at least 50 .mu.V/K and a method of manufacturing the thermoelectric composition. A plurality of components are disposed in a ball-milling vessel, wherein the plurality of components comprise tin (Sn), tellurium (Te), and at least one dopant such as indium (In). The components are subsequently mechanically and thermally processed, for example, by hot-pressing. In response to the mechanical-thermally processing, a thermoelectric composition is formed, wherein the thermoelectric composition comprises a dimensionless figure of merit (ZT) of the thermoelectric composition is at least 0.8, and wherein a Seebeck coefficient of the thermoelectric composition is at least 50 .mu.V/K at any temperature.

Photo-induced thermoelectric response in suspended single-walled carbon nanotube films

Science.gov (United States)

St-Antoine, Benoit; Menard, David; Martel, Richard

2010-03-01

A study was carried out on the position dependent photovoltage of suspended single-walled carbon nanotube films in vacuum. The photoresponse of such films was found to be driven by a thermal mechanism, rather than by direct photoexcitation of carriers. [1] A model was developed which establishes a relation between the photoresponse profile and the local Seebeck coefficient of the film, thus opening up new perspectives for material characterization. The technique was demonstrated by monitoring the doping changes in the nanotube films obtained by successive current conditioning steps. Since the Seebeck coefficient of carbon nanotubes spans a considerable range depending on their doping state, the photovoltage amplitude can be tuned and large responses have been measured (up to 0.75mV for 1.2mW). [4pt] [1] B. St-Antoine et al. Nano Lett. 9, 3503 (2009)

Modulation of transport properties of RuO2 with 3d transition metals

International Nuclear Information System (INIS)

Music, Denis; Chen, Yen-Ting; Geyer, Richard W; Bliem, Pascal; Schneider, Jochen M

2014-01-01

Using density functional theory, we have demonstrated that alloying of RuO 2 (P4 2 /mnm) with 3d transition metals (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn) gives rise to a substantial increase in the Seebeck coefficient probably due to quantum confinement. As Fe yields the largest enhancement, it was selected for experimental verification. We synthesized combinatorial Ru–Fe–O thin films and subsequently measured their transport properties at elevated temperatures. The Fe-alloyed samples increase the Seebeck coefficient threefold with respect to the unalloyed RuO 2 specimen thereby verifying the theoretical prediction. The here obtained power factor of 274 μW K −2 m −1 is not only the largest reported value for RuO 2 based compounds but it also occurs at ∼600 °C thus increasing the Carnot efficiency significantly. (paper)

Enhanced high temperature thermoelectric response of sulphuric acid treated conducting polymer thin films

KAUST Repository

Sarath Kumar, S. R.

2015-11-24

We report the high temperature thermoelectric properties of solution processed pristine and sulphuric acid treated poly(3, 4-ethylenedioxythiophene):poly(4-styrenesulfonate) (or PEDOT:PSS) films. The acid treatment is shown to simultaneously enhance the electrical conductivity and Seebeck coefficient of the metal-like films, resulting in a five-fold increase in thermoelectric power factor (0.052 W/m. K ) at 460 K, compared to the pristine film. By using atomic force micrographs, Raman and impedance spectra and using a series heterogeneous model for electrical conductivity, we demonstrate that acid treatment results in the removal of PSS from the films, leading to the quenching of accumulated charge-induced energy barriers that prevent hopping conduction. The continuous removal of PSS with duration of acid treatment also alters the local band structure of PEDOT:PSS, resulting in simultaneous enhancement in Seebeck coefficient.

Eco-Friendly Alternative Refrigeration Systems

Indian Academy of Sciences (India)

frigerants in mechanical refrigeration system has become a subject of great ..... In 1823, Seebeck discovered that a voltage drop appears across a junction (i.e., a .... delta function in the transport distribution centered about 2-3. KT from the ...

Hole transport and photoluminescence in Mg-doped InN

Energy Technology Data Exchange (ETDEWEB)

Miller, N.; Ager III, J. W.; Smith III, H. M.; Mayer, M. A.; Yu, K. M.; Haller, E. E.; Walukiewicz, W.; Schaff, W. J.; Gallinat, C.; Koblmuller, G.; Speck, J. S.

2010-03-24

Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a"window" from ca. 3 x 1017 to 1 x 1019 cm-3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coecient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ~;;70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge.

Compressive strain induced enhancement in thermoelectric-power-factor in monolayer MoS2 nanosheet

International Nuclear Information System (INIS)

Dimple; Jena, Nityasagar; De Sarkar, Abir

2017-01-01

Strain and temperature induced tunability in the thermoelectric properties in monolayer MoS 2 (ML-MoS 2 ) has been demonstrated using density functional theory coupled to semi-classical Boltzmann transport theory. Compressive strain, in general and uniaxial compressive strain (along the zig-zag direction), in particular, is found to be most effective in enhancing the thermoelectric power factor, owing to the higher electronic mobility and its sensitivity to lattice compression along this direction. Variation in the Seebeck coefficient and electronic band gap with strain is found to follow the Goldsmid–Sharp relation. n-type doping is found to raise the relaxation time-scaled thermoelectric power factor higher than p-type doping and this divide widens with increasing temperature. The relaxation time-scaled thermoelectric power factor in optimally n-doped ML-MoS 2 is found to undergo maximal enhancement under the application of 3% uniaxial compressive strain along the zig-zag direction, when both the ( direct ) electronic band gap and the Seebeck coefficient reach their maximum, while the electron mobility drops down drastically from 73.08 to 44.15 cm 2 V −1 s −1 . Such strain sensitive thermoelectric responses in ML-MoS 2 could open doorways for a variety of applications in emerging areas in 2D-thermoelectrics, such as on-chip thermoelectric power generation and waste thermal energy harvesting. (paper)

Enhanced thermoelectric properties in p-type Bi{sub 0.4}Sb{sub 1.6}Te{sub 3} alloy by combining incorporation and doping using multi-scale CuAlO{sub 2} particles

Energy Technology Data Exchange (ETDEWEB)

Song, Zijun; Liu, Yuan; Zhou, Zhenxing; Lu, Xiaofang; Wang, Lianjun [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai (China); Institute of Functional Materials, Donghua University, Shanghai (China); Zhang, Qihao [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai (China); University of Chinese Academy of Sciences, Beijing (China); Jiang, Wan [State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai (China); Institute of Functional Materials, Donghua University, Shanghai (China); School of Material Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen (China); Chen, Lidong [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai (China)

2017-01-15

Multi-scale CuAlO{sub 2} particles are introduced into the Bi{sub 0.4}Sb{sub 1.6}Te{sub 3} matrix to synergistically optimize the electrical conductivity, Seebeck coefficient, and the lattice thermal conductivity. Cu element originating from fine CuAlO{sub 2} grains diffuses into the Bi{sub 0.4}Sb{sub 1.6}Te{sub 3} matrix and tunes the carrier concentration while the coarse CuAlO{sub 2} particles survive as the second phase within the matrix. The power factor is improved at the whole temperatures range due to the low-energy electron filtering effect on Seebeck coefficient and enhanced electrical transport property by mild Cu doping. Meanwhile, the remaining CuAlO{sub 2} inclusions give rise to more boundaries and newly built interfaces scattering of heat-carrying phonons, resulting in the reduced lattice thermal conductivity. Consequently, the maximum ZT is found to be enhanced by 150% arising from the multi-scale microstructure regulation when the CuAlO{sub 2} content reaches 0.6 vol.%. Not only that, but the ZT curves get flat in the whole temperature range after introducing the multi-scale CuAlO{sub 2} particles, which leads to a remarkable increase in the average ZT. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of Printing Parameters on Tensile, Dynamic Mechanical, and Thermoelectric Properties of FDM 3D Printed CABS/ZnO Composites

Directory of Open Access Journals (Sweden)

Yah Yun Aw

2018-03-01

Full Text Available Fused deposition modelling (FDM has been widely used in medical appliances, automobile, aircraft and aerospace, household appliances, toys, and many other fields. The ease of processing, low cost and high flexibility of FDM technique are strong advantages compared to other techniques for thermoelectric polymer composite fabrication. This research work focuses on the effect of two crucial printing parameters (infill density and printing pattern on the tensile, dynamic mechanical, and thermoelectric properties of conductive acrylonitrile butadiene styrene/zinc oxide (CABS/ZnO composites fabricated by FDM technique. Results revealed significant improvement in tensile strength and Young’s modulus, with a decrease in elongation at break with infill density. Improvement in dynamic storage modulus was observed when infill density changed from 50% to 100%. However, the loss modulus and damping factor reduced gradually. The increase of thermal conductivity was relatively smaller compared to the improvement of electrical conductivity and Seebeck coefficient, therefore, the calculated figure of merit (ZT value increased with infill density. Line pattern performed better than rectilinear, especially in tensile properties and electrical conductivity. From the results obtained, FDM-fabricated CABS/ZnO showed much potential as a promising candidate for thermoelectric application.

Effect of Printing Parameters on Tensile, Dynamic Mechanical, and Thermoelectric Properties of FDM 3D Printed CABS/ZnO Composites.

Science.gov (United States)

Aw, Yah Yun; Yeoh, Cheow Keat; Idris, Muhammad Asri; Teh, Pei Leng; Hamzah, Khairul Amali; Sazali, Shulizawati Aqzna

2018-03-22

Fused deposition modelling (FDM) has been widely used in medical appliances, automobile, aircraft and aerospace, household appliances, toys, and many other fields. The ease of processing, low cost and high flexibility of FDM technique are strong advantages compared to other techniques for thermoelectric polymer composite fabrication. This research work focuses on the effect of two crucial printing parameters (infill density and printing pattern) on the tensile, dynamic mechanical, and thermoelectric properties of conductive acrylonitrile butadiene styrene/zinc oxide (CABS/ZnO composites fabricated by FDM technique. Results revealed significant improvement in tensile strength and Young's modulus, with a decrease in elongation at break with infill density. Improvement in dynamic storage modulus was observed when infill density changed from 50% to 100%. However, the loss modulus and damping factor reduced gradually. The increase of thermal conductivity was relatively smaller compared to the improvement of electrical conductivity and Seebeck coefficient, therefore, the calculated figure of merit (ZT) value increased with infill density. Line pattern performed better than rectilinear, especially in tensile properties and electrical conductivity. From the results obtained, FDM-fabricated CABS/ZnO showed much potential as a promising candidate for thermoelectric application .

Thermal Recovery from Cold-Working in Type K Bare-Wire Thermocouples

Science.gov (United States)

Greenen, A. D.; Webster, E. S.

2017-12-01

Cold-working of most thermocouples has a significant, direct impact on the Seebeck coefficient which can lead to regions of thermoelectric inhomogeneity and accelerated drift. Cold-working can occur during the wire swaging process, when winding the wire onto a bobbin, or during handling by the end user—either accidentally or deliberately. Swaging-induced cold-work in thermocouples, if uniformly applied, may result in a high level of homogeneity. However, on exposure to elevated temperatures, the subsequent recovery process from the cold-working can then result in significant drift, and this can in turn lead to erroneous temperature measurements, often in excess of the specified manufacturer tolerances. Several studies have investigated the effects of cold-work in Type K thermocouples usually by bending, or swaging. However, the amount of cold-work applied to the thermocouple is often difficult to quantify, as the mechanisms for applying the strains are typically nonlinear when applied in this fashion. A repeatable level of cold-working is applied to the different wires using a tensional loading apparatus to apply a known yield displacement to the thermoelements. The effects of thermal recovery from cold-working can then be accurately quantified as a function of temperature, using a linear gradient furnace and a high-resolution homogeneity scanner. Variation in these effects due to differing alloy compositions in Type K wire is also explored, which is obtained by sourcing wire from a selection of manufacturers. The information gathered in this way will inform users of Type K thermocouples about the potential consequences of varying levels of cold-working and its impact on the Seebeck coefficient at a range of temperatures between ˜ 70°C and 600° C. This study will also guide users on the temperatures required to rapidly alleviate the effects of cold-working using thermal annealing treatments.

Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

KAUST Repository

Sarath Kumar, S. R.

2012-02-01

The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258–133 S cm−1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8–3.2 me ), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

KAUST Repository

Sarath Kumar, S. R.; Abutaha, Anas I.; Hedhili, Mohamed N.; Alshareef, Husam N.

2012-01-01

The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258–133 S cm−1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8–3.2 me ), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

Experimental Investigation of Zinc Antimonide Thin Films under Different Thermal Boundary Conditions

DEFF Research Database (Denmark)

Mir Hosseini, Seyed Mojtaba; Rosendahl, Lasse Aistrup; Rezaniakolaei, Alireza

for all cases, showing that the electrical potential difference is increasing by temperature for all cases with the same slope. Also the value of Seebeck coefficient (α) is almost constant for all cases. The obtained value of α can compete with developed bulk TEG materials in literature. The thin film...... is able to operate in relatively high range of temperature with long working period without failure. Furthermore, effects of implementing thermal cycling on stability analysis of a TEG sample are considered. By testing the thermoelectric thin film specimen during a thermal cycling, behavior of the TEG...

Alignment system for large high-power CO2 laser fusion systems

International Nuclear Information System (INIS)

Bausman, M.D.; Liberman, I.; Manning, J.P.; Singer, S.

1977-01-01

Aligning a pulsed CO 2 laser fusion system involves control systems which insure that the centers of beams follow a prescribed path to within 1 mm, that the pointing of the beams is correct to approximately 20 microradians, and that focal spot at the location of the experimental fusion target be placed to accuracies of 10 to 20 micrometers laterally and approximately 50 micrometers axially. These alignments are accomplished by a variety of sensing techniques which include thermal pinholes and quadrant detectors, Seebeck effect silicon detectors, and imaging autocollimating Hartmann test procedures employing ir vidicon systems

Nonlocal thermoelectric symmetry relations in ferromagnet-superconductor proximity structures

Energy Technology Data Exchange (ETDEWEB)

Machon, Peter; Belzig, Wolfgang [Department of Physics, University of Konstanz, D-78457 Konstanz (Germany); Eschrig, Matthias [Department of Physics, University of Konstanz, D-78457 Konstanz (Germany); Department of Physics, Royal Holloway, University of London, Egham Hill, EGHAM, TW20 0EX (United Kingdom)

2012-07-01

The symmetries of thermal and electric transport coefficients in quantum coherent structures are related to fundamental thermodynamic principles by the Onsager reciprocity. We generalize Onsager's symmetry relation to nonlocal thermoelectric currents in a three terminal ferromagnet-superconductor heterostructure including spin-dependent crossed Andreev reflection and direct electron transfer processes. We proof this general symmetry by applying spin-dependent boundary conditions for quasi-classical Green's functions in both the clean and the dirty limit. We predict an anomalously large local thermopower and a nonlocal Seebeck effect, which can be explained by the spin-dependent spectral properties.

Exploring the doping effects of Ag in p-type PbSe compounds with enhanced thermoelectric performance

Science.gov (United States)

Wang, Shanyu; Zheng, Gang; Luo, Tingting; She, Xiaoyu; Li, Han; Tang, Xinfeng

2011-11-01

In this study, we prepared a series of Ag-doped PbSe bulk materials by a melting-quenching process combined with a subsequent spark plasma sintering process, and systematically investigated the doping effects of Ag on the thermoelectric properties. Ag substitution in the Pb site does not introduce resonant levels near the valence band edge or detectable change in the density of state in the vicinity of the Fermi level, but moves the Fermi level down and increases the carrier concentration to a maximum value of ~4.7 × 1019 cm-3 which is still insufficient for heavily doped PbSe compounds. Nonetheless, the non-monotonic variation in carrier concentration with increasing Ag content indicates that Ag doping reaches the solution limit at ~1.0% and the excessive Ag presumably acts as donors in the materials. Moreover, the large energy gap of the PbSe-based material wipes off significant 'roll-over' in the Seebeck coefficient at elevated temperatures which gives rise to high power factors, being comparable to p-type Te analogues. Consequently, the maximum ZT reaches ~1.0 for the 1.5% Ag-doped samples with optimized carrier density, which is ~70% improvement in comparison with an undoped sample and also superior to the commercialized p-type PbTe materials.

Thermal transport properties of niobium and some niobium base alloys from 80 to 16000K

International Nuclear Information System (INIS)

Moore, J.P.; Graves, R.S.; Williams, R.K.

1980-01-01

The electrical resistivities and absolute Seebeck coefficients of 99.8 at. % niobium with a RRR of 36, Nb-4.8 at. % W, Nb-5 at. % Mo, Nb-10 at. % Mo, and Nb-2.4 at. % Mo-2.4 at. % Zr were measured from 80 to 1600 0 K, and the thermal conductivities of the niobium and Nb-5 at. % W were measured from 80 to 1300 0 K. A technique is described for measuring the electrical resistivity and Seebeck coefficient of a specimen during radial heat flow measurements of the thermal conductivity. The transport property results, which had uncertainties of +-0.4%for electrical resistivity and +-1.4% for thermal conductivity, showed the influence of tungsten and molybdenum solutes on the transport properties of niobium and were used to obtain the electronic Lorenz function of pure niobium, which was found to approach the Sommerfeld value at high temperatures

Thermoelectric properties of conducting polyaniline/BaTiO3 nanoparticle composite films

Science.gov (United States)

Anno, H.; Yamaguchi, K.; Nakabayashi, T.; Kurokawa, H.; Akagi, F.; Hojo, M.; Toshima, N.

2011-05-01

Conducting polyaniline (PANI)/BaTiO3 nanoparticle composite films with different molar ratio values R=1, 5, 10, and 100 have been prepared on a quartz substrate by casting the m-cresol solution of PANI, (±)-10-camphorsulfonic acid (CSA) and BaTiO3 nanoparticle with an average diameter of about 20 nm. The CSA-doped PANI/BaTiO3 composite films were characterized by x-ray diffraction, Fourier transform infrared spectroscopy, and UV-Vis transmission spectroscopy. The Seebeck coefficient and the electrical conductivity of the films with different R values, together with CSA-doped PANI films, were measured in the temperature range from room temperature to ~400 K. The relation between the Seebeck coefficient and the electrical conductivity in the composite films are discussed from a comparison of them with those of CSA-doped PANI films and other PANI composite films.

Power Generation by Zinc Antimonide Thin Film under Various Load Resistances at its Critical Operating Temperature

DEFF Research Database (Denmark)

Mir Hosseini, Seyed Mojtaba; Rezaniakolaei, Alireza; Rosendahl, Lasse Aistrup

slightly reduces during unload conditions, although it is expected that by eliminating load in each step, the initial amount of voltage exactly repeats. Similar behavior is observed for Seebeck coefficient distribution versus time of working particularly in lower load resistances. Based on variation...... thin films operating under different load resistances at around its critical operating temperature, 400 ᵒC. The thermoelement is subjected to constant hot side temperature and to room temperature at the cold junction in order to measure the thin film TEG’s sample performance. The nominal loads equal...... to 10, 15, 20, 25, 30, 35, 40, 45… 175, and also 200 Ohms were applied. The results show that the value of the Seebeck coefficient is 0.0002 [V/K] for the specimen, which is in agreement with quantities of other zinc antimonide bulks materials in literature. The results also show that the voltage...

Annealing effects on room temperature thermoelectric performance of p-type thermally evaporated Bi-Sb-Te thin films

Science.gov (United States)

Singh, Sukhdeep; Singh, Janpreet; Tripathi, S. K.

2018-05-01

Bismuth antimony telluride (Bi-Sb-Te) compounds have been investigated for the past many decades for thermoelectric (TE) power generation and cooling purpose. We synthesized this compound with a stoichiometry Bi1.2Sb0.8Te3 through melt cool technique and thin films of as synthesized material were deposited by thermal evaporation. The prime focus of the present work is to study the influence of annealing temperature on the room temperature (RT) power factor of thin films. Electrical conductivity and Seebeck coefficient were studied and power factors were calculated which showed a peak value at 323 K. The compounds performance is comparable to some very efficient Bi-Sb-Te reported stoichiometries at RT scale. The values observed show that material has an enormous potential for energy production at ambient temperature scales.

Effects of ball milling on microstructures and thermoelectric properties of higher manganese silicides

International Nuclear Information System (INIS)

Chen, Xi; Shi, Li; Zhou, Jianshi; Goodenough, John B.

2015-01-01

Highlights: • The already low κ L of HMS can be suppressed further by decreasing the grain size. • The ball milling process can lead to the formation of secondary MnSi and W/C-rich phases. • The formation of the MnSi ad W/C rich phases is found to suppress the thermoelectric power factor. - Abstract: Bulk nanostructured higher manganese silicide (HMS) samples with different grain size are prepared by melting, subsequent ball milling (BM), and followed by spark plasma sintering (SPS). The effects of BM time on the microstructures and thermoelectric properties of these samples are investigated. It is found that BM effectively reduces the grain size to about 90 nm in the sample after SPS, which leads to a decrease in both the thermal conductivity and electrical conductivity. By prolonging the BM time, MnSi and tungsten/carbon-rich impurity phases are formed due to the impact-induced decomposition of HMS and contamination from the tungsten carbide jar and balls during the BM, respectively. These impurities result in a reduced Seebeck coefficient and increased thermal conductivity above room temperature. The measured size-dependent lattice thermal conductivities agree qualitatively with the reported calculation results based on a combined phonon and diffuson model. The size effects are found to be increasingly significant as temperature decreases. Because of the formation of the impurity phases and a relatively large grain size, the ZT values are not improved in the ball-milled HMS samples. These findings suggest the need of alternative approaches for the synthesis of pure HMS with further reduced grain size and controlled impurity doping in order to enhance the thermoelectric figure-of-merit of HMS via nanostructuring

Thermoelectric properties of Bi2SexTe3-x prepared by Bridgman method

International Nuclear Information System (INIS)

Keawprak, N.; Lao-ubol, S.; Eamchotchawalit, C.; Sun, Z.M.

2011-01-01

Highlights: → Bi 2 Se x Te 3-x with various Se concentrations grown by Bridgman method was prepared. → The electrical conductivity was found to decrease with increasing Se content. → The Seebeck coefficient was not influenced by the substitution of Te with Se. → The electronic thermal conductivity exhibited a decrease with increasing Se. → The highest of dimensionless figure of merit (ZT) was measure to be 1.2. - Abstract: Bi 2 Se x Te 3-x crystals with various x values were grown by Bridgman method. The electrical conductivity, σ, was found to decrease with increasing Se content. The highest σ of 1.6 x 10 5 S m -1 at room temperature was reached at x = 0.12 with a growth rate of 0.8 mm h -1 . The Seebeck coefficient, S, was less dependent on Se content, all with positive values showing p-type characteristics, and the highest S was measured to be 240 μV K -1 at x = 0.24. The lowest thermal conductivity, κ, was 0.7 W m -1 K -1 at x = 0.36. The electronic part of κ, κ el , showed a decrease with increasing Se content, which implies that the hole concentration as the main carriers was reduced by the addition of Se. The highest dimensionless figure of merit, ZT, at room temperature was 1.2 at x = 0.36, which is attributed to the combination of a rather high electrical conductivity and Seebeck coefficient and low thermal conductivity.

Fabrication and characterization of Pd/Cu doped ZnO/Si and Ni/Cu doped ZnO/Si Schottky diodes

Energy Technology Data Exchange (ETDEWEB)

Agarwal, Lucky; Singh, Brijesh Kumar; Tripathi, Shweta [Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004 (India); Chakrabarti, P., E-mail: pchakrabarti.ece@iitbhu.ac.in [Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004 (India); Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India)

2016-08-01

In this paper, fabrication and characterization of copper doped ZnO (Cu doped ZnO) based Schottky devices have been reported. Cu doped ZnO thin films have been deposited on p-Si (100) samples by the sol-gel spin coating method. X-Ray diffraction (XRD) and atomic force microscopy (AFM) studies have been done in order to evaluate the structural and morphological properties of the film. The optical properties of the film have been determined by using variable angle ellipsometry. Further, Seebeck measurement of the deposited Cu doped ZnO film leads to positive Seebeck coefficient confirming the p-type conductivity of the sample. The resistivity and acceptor concentration of the film has also been evaluated using four probe measurement system. Pd and Ni metals have been deposited on separate Cu doped ZnO thin film samples using low cost thermal evaporation method to form Schottky contacts. The electrical characterization of the Schottky diode has been performed by semiconductor device analyzer (SDA). Electrical parameters such as barrier height, ideality factor, reverse saturation current and rectification ratio have also been determined for the as-prepared Schottky diode using conventional thermionic emission model and Cheung's method. - Highlights: • Fabrication of sol-gel derived Cu doped ZnO (p-type) Schottky contact proposed. • The p-type Conductivity of the sample confirmed by Seebeck Measurement. • Pd and Ni deposited on Cu doped ZnO film to form Schottky contacts. • Cu doped ZnO expected to emerge as a potential material for thin film solar cells.

Fabrication and characterization of Pd/Cu doped ZnO/Si and Ni/Cu doped ZnO/Si Schottky diodes

International Nuclear Information System (INIS)

Agarwal, Lucky; Singh, Brijesh Kumar; Tripathi, Shweta; Chakrabarti, P.

2016-01-01

In this paper, fabrication and characterization of copper doped ZnO (Cu doped ZnO) based Schottky devices have been reported. Cu doped ZnO thin films have been deposited on p-Si (100) samples by the sol-gel spin coating method. X-Ray diffraction (XRD) and atomic force microscopy (AFM) studies have been done in order to evaluate the structural and morphological properties of the film. The optical properties of the film have been determined by using variable angle ellipsometry. Further, Seebeck measurement of the deposited Cu doped ZnO film leads to positive Seebeck coefficient confirming the p-type conductivity of the sample. The resistivity and acceptor concentration of the film has also been evaluated using four probe measurement system. Pd and Ni metals have been deposited on separate Cu doped ZnO thin film samples using low cost thermal evaporation method to form Schottky contacts. The electrical characterization of the Schottky diode has been performed by semiconductor device analyzer (SDA). Electrical parameters such as barrier height, ideality factor, reverse saturation current and rectification ratio have also been determined for the as-prepared Schottky diode using conventional thermionic emission model and Cheung's method. - Highlights: • Fabrication of sol-gel derived Cu doped ZnO (p-type) Schottky contact proposed. • The p-type Conductivity of the sample confirmed by Seebeck Measurement. • Pd and Ni deposited on Cu doped ZnO film to form Schottky contacts. • Cu doped ZnO expected to emerge as a potential material for thin film solar cells.

Solution synthesis of telluride-based nano-barbell structures coated with PEDOT:PSS for spray-printed thermoelectric generators

Science.gov (United States)

Bae, Eun Jin; Kang, Young Hun; Jang, Kwang-Suk; Lee, Changjin; Cho, Song Yun

2016-05-01

Solution-processable telluride-based heterostructures coated with poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (Te-Bi2Te3/PEDOT:PSS) were synthesized through a solution-phase reaction at low temperatures. The water-based synthesis yielded PEDOT:PSS-coated Te-Bi2Te3 nano-barbell structures with a high Seebeck coefficient that can be stably dispersed in water. These hybrid solutions were deposited onto a substrate by the spray-printing method to prepare thermoelectric generators. The thermoelectric properties of the Te-Bi2Te3/PEDOT:PSS hybrid films were significantly enhanced by a simple acid treatment due to the increased electrical conductivity, and the power factor of those materials can be effectively tuned over a wide range depending on the acid concentration of the treatment. The power factors of the synthesized Te-Bi2Te3/PEDOT:PSS hybrids were optimized to 60.05 μW m-1 K-2 with a Seebeck coefficient of 93.63 μV K-1 and an electrical conductivity of 69.99 S cm-1. The flexible thermoelectric generator fabricated by spray-printing Te-Bi2Te3/PEDOT:PSS hybrid solutions showed an open-circuit voltage of 1.54 mV with six legs at ΔT = 10 °C. This approach presents the potential for realizing printing-processable hybrid thermoelectric materials for application in flexible thermoelectric generators.Solution-processable telluride-based heterostructures coated with poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (Te-Bi2Te3/PEDOT:PSS) were synthesized through a solution-phase reaction at low temperatures. The water-based synthesis yielded PEDOT:PSS-coated Te-Bi2Te3 nano-barbell structures with a high Seebeck coefficient that can be stably dispersed in water. These hybrid solutions were deposited onto a substrate by the spray-printing method to prepare thermoelectric generators. The thermoelectric properties of the Te-Bi2Te3/PEDOT:PSS hybrid films were significantly enhanced by a simple acid treatment due to the increased electrical conductivity, and

Performance analysis of a thermosize micro/nano heat engine

International Nuclear Information System (INIS)

Nie Wenjie; He Jizhou

2008-01-01

In a recent paper [A. Sisman, I. Muller, Phys. Lett. A 320 (2004) 360] the thermodynamic properties of ideal gases confined in a narrow box were examined theoretically. The so-called 'thermosize effects' similar to thermoelectric effects, such as Seebeck-like thermosize effect, Peltier-like thermosize effect and Thomson-like thermosize effect, were analyzed. Like the thermoelectric generator, based on the thermosize effects we have established a model of micro/nano scaled ideal gas heat engine cycle which includes two isothermal and two isobaric processes. The expressions of power output and efficiency of this cycle in the two cases of reversible and irreversible heat exchange are derived and the optimal performance characteristics of the heat engine is discussed by some numerical example. The results obtained here will provide theoretical guidance for the design of micro/nano scaled device

Synthesis, structure and thermoelectric properties of La1 ...

Indian Academy of Sciences (India)

High temperature electrical resistivity, Seebeck coefficient and thermal conductivity measurements were performed on thehigh density hot pressed pellets in the temperature range of 300–800 K, which exhibit p-type conductivity of pristine anddoped compositions. The X-ray photoelectron spectroscopy (XPS) studies confirm ...

Bulletin of Materials Science | Indian Academy of Sciences

Indian Academy of Sciences (India)

The electrical properties of RAgSn2 compounds were investigated by means of electrical resistivity and Seebeck coefficient measurements in 4.2–300 K temperature range. All investigated compounds exhibit metallic type of conductivity. Electronic structure calculations based on full potential linearized augmented plane ...

Material parameters for thermoelectric performance

Indian Academy of Sciences (India)

The thermoelectric performance of a thermoelement is ideally defined in terms of the so-called figure-of-merit = 2 / , where , and refer respectively to the Seebeck coefficient, electrical conductivity and thermal conductivity of the thermoelement material. However, there are other parameters which are fairly good ...

Unileg Thermoelectric Generator Design for Oxide Thermoelectrics and Generalization of the Unileg Design Using an Idealized Metal

DEFF Research Database (Denmark)

Wijesooriyage, Waruna Dissanayaka; Rosendahl, Lasse; Brown, David R.

2015-01-01

the optimal area ratio for conductor and semiconductor given by the RCA. The results are further confirmed by finite-element analysis using COMSOL Multiphysics software. Furthermore, the U-TEG design is generalized by using an idealized metal with zero Seebeck coefficient. Even though the idealized metal has...

Enhanced thermoelectric properties of PEDOT/PSS/Te composite films treated with H{sub 2}SO{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Song, Haijun; Cai, Kefeng, E-mail: kfcai@tongji.edu.cn [Tongji University, Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, School of Materials Science and Engineering (China); Shen, Shirley [CSIRO Manufacturing (Australia)

2016-12-15

Firstly, tellurium (Te) nanorods with a high Seebeck coefficient have been integrated into a conducting polymer PEDOT/PSS to form PEDOT/PSS/Te composite films. The Seebeck coefficient of the PEDOT/PSS/Te (90 wt.%) composite films is ~191 μV/K, which is about 13 times greater than that of pristine PEDOT/PSS. Then, H{sub 2}SO{sub 4} treatment has been used to further tune the thermoelectric properties of the composite films by adjusting the doping level and increasing the carrier concentration. After the acid treatment, the electrical conductivity of the composite films has increased from 0.22 to 1613 S/cm due to the removal of insulating PSS and the structural rearrangement of PEDOT. An optimized power factor of 42.1 μW/mK{sup 2} has been obtained at room temperature for a PEDOT/PSS/Te (80 wt.%) sample, which is about ten times larger than that of the untreated PEDOT/PSS/Te composite film.

Enhanced thermoelectric properties of PEDOT/PSS/Te composite films treated with H2SO4

International Nuclear Information System (INIS)

Song, Haijun; Cai, Kefeng; Shen, Shirley

2016-01-01

Firstly, tellurium (Te) nanorods with a high Seebeck coefficient have been integrated into a conducting polymer PEDOT/PSS to form PEDOT/PSS/Te composite films. The Seebeck coefficient of the PEDOT/PSS/Te (90 wt.%) composite films is ~191 μV/K, which is about 13 times greater than that of pristine PEDOT/PSS. Then, H 2 SO 4 treatment has been used to further tune the thermoelectric properties of the composite films by adjusting the doping level and increasing the carrier concentration. After the acid treatment, the electrical conductivity of the composite films has increased from 0.22 to 1613 S/cm due to the removal of insulating PSS and the structural rearrangement of PEDOT. An optimized power factor of 42.1 μW/mK 2 has been obtained at room temperature for a PEDOT/PSS/Te (80 wt.%) sample, which is about ten times larger than that of the untreated PEDOT/PSS/Te composite film.

Photoinduced second harmonic generation of LaFe4Sb12near spin fluctuated critical points

International Nuclear Information System (INIS)

Nouneh, K.; Viennois, R.; Kityk, I.V.; Terki, F.; Charar, S.; Benet, S.; Paschen, S.

2004-01-01

The temperature dependence of the resistivity, the Seebeck coefficient and photoinduced second harmonic generation (PISHG) are studied near the quantum critical point in the skutterudite compound LaFe 4 Sb 12 , possessing increased spin fluctuations. We observed a large maximum of the PISHG at a temperature of about 15 K. The PISHG signal increases substantially below 35 K. We found a correlation between the temperature dependences of PISHG, resistivity and Seebeck coefficient. We proposed a phenomenological explanation for the occurrence of the PISHG signal in LaFe 4 Sb 12 implying strong spin fluctuations exist in this system, which may present some interest for the study of other spin fluctuation systems. Physical insight into the phenomenon observed is grounded in the participation of anharmonic electron-phonon and electron-paramagnon interactions stimulated by inducing light in the interactions with the photoexcited dipole moments. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires.

Science.gov (United States)

Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T; Martinez, Julio A

2016-01-08

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

Exploring Charge Transport in Guest Molecule Infiltrated Cu₃(BTC)₂ Metal Organic Framework

Energy Technology Data Exchange (ETDEWEB)

Leonard, Francois Leonard [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Stavila, Vitalie [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Allendorf, Mark D. [Sandia National Lab. (SNL-CA), Livermore, CA (United States)

2014-09-01

The goal of this Exploratory Express project was to expand the understanding of the physical properties of our recently discovered class of materials consisting of metal-organic frameworks with electroactive ‘guest’ molecules that together form an electrically conducting charge-transfer complex (molecule@MOF). Thin films of Cu₃(BTC)₂ were grown on fused silica using solution step-by-step growth and were infiltrated with the molecule tetracyanoquinodimethane (TCNQ). The infiltrated MOF films were extensively characterized using optical microscopy, scanning electron microscopy, Raman spectroscopy, electrical conductivity, and thermoelectric properties. Thermopower measurements on TCNQ@Cu₃(BTC)₂ revealed a positive Seebeck coefficient of ~400 μV/k, indicating that holes are the primary carriers in this material. The high value of the Seebeck coefficient and the expected low thermal conductivity suggest that molecule@MOF materials may be attractive for thermoelectric power conversion applications requiring low cost, solution-processable, and non-toxic active materials.

Thermoelectric power in ionic and electronic mixed conductors

Energy Technology Data Exchange (ETDEWEB)

Kamata, Masahiro; Jin-nouchi, Kenji; Esaka, Takao [Tottori Univ. (Japan). Faculty of Engineering

1996-08-01

In order to study the thermoelectric property of the oxide ionic and electronic mixed conductor of 10 mol% CaO-doped CeO{sub 2} (CDC), a new type of thermocell was prepared, in which platinum electrodes were embedded in the tube-type sample to diminish the large temperature gradient over the electrodes due to the local heat radiation from heating furnace. Using this thermocell, reproducible data were obtained. The thermoelectric power measured in CDC under various oxygen atmospheres (Po{sub 2}) from 1.0 to about 10{sup -15} atm showed that the sign of Seebeck coefficients changed from minus to plus. This variation of Seebeck coefficients vs. Po{sub 2} was well interpreted by considering that (1) the thermoelectric power could be a driving force to make actual and electrochemical oxygen transfer in the mixed conductor and (2) the electrode processes had limiting rates due to slow oxygen diffusion (or oxygen gas exhaustion at the cathode and evolution at the anode). (author)

Length-dependent thermoelectric characteristics of silicon nanowires on plastics in a relatively low temperature regime in ambient air

International Nuclear Information System (INIS)

Choi, Jinyong; Cho, Kyoungah; Kim, Sangsig

2013-01-01

We report on the thermoelectric characteristics of p-type silicon nanowires (NWs) on plastics in the relatively low temperature regime below 47 ° C, and for temperature differences of less than 10 K in ambient air. Thermal profile images are utilized to directly determine the temperature difference in the NWs generated by Joule heating in air. The Seebeck coefficient of the NWs increases from 294 to 414 μV K −1 as the NW length varies from 40 to 280 μm. For a temperature difference of 7 K, the maximal Seebeck voltage can be estimated to be 2.7 mV for NWs with a length of 280 μm. In contrast, the output power is maximized for NWs length of 240 μm. The maximized output power obtained experimentally in this study is 2.1 pW at a temperature difference of 6 K. The thermoelectric characteristics are analyzed and discussed. (paper)

Thermoelectric properties of electrodeposited tellurium films and the sodium lignosulfonate effect

International Nuclear Information System (INIS)

Abad, Begoña; Rull-Bravo, Marta; Hodson, Stephen L.; Xu, Xianfan; Martin-Gonzalez, Marisol

2015-01-01

The effect of the addition of a surfactant, sodium lignosulfonate (SLS), on the thermoelectric properties of tellurium films prepared by electrochemical deposition is studied. The growth mechanism is found to have an important role in the thermoelectric properties since the grain size of the films is sharply reduced when the surfactant is added to the solution. For this reason, the electrical resistivity of the tellurium films when the surfactant is not added is 229 μΩ·m, which is lower than 798 μΩ·m with SLS. The Seebeck coefficient values are not influenced, with values in the vicinity of 285 μV/K for both solutions. The power factor resulted higher values than previous works, reaching values of 280 μW/m·K 2 (without SLS) and 82 μW/m·K 2 (with SLS) at room temperature. Finally, the thermal conductivity was measured by means of the Photoacoustic technique, which showed values of the order of 1 W/m·K for both solutions, which is a factor of 3 less than the bulk value of tellurium. A notable observation is that the power factor and the thermal conductivity of electrodeposited tellurium films have the same order of magnitude of bismuth telluride films grown by electrodeposition. The figure of merit is estimated to be approximately one order of magnitude higher than the bulk value, 0.09 without SLS and 0.03 with SLS, both at room temperature

Effect of linear and non-linear components in the temperature dependences of thermoelectric properties on the energy conversion efficiency

International Nuclear Information System (INIS)

Yamashita, Osamu

2009-01-01

The new thermal rate equations were built up by taking the linear and non-linear components in the temperature dependences of the Seebeck coefficient α, the electrical resistivity ρ and thermal conductivity κ of a thermoelectric (TE) material into the thermal rate equations on the assumption that their temperature dependences are expressed by a quadratic function of temperature T. The energy conversion efficiency η for a single TE element was formulated using the new thermal rate ones proposed here. By applying it to the high-performance half-Heusler compound, the non-linear component in the temperature dependence of α among those of the TE properties has the greatest effect on η, so that η/η 0 was increased by 11% under the condition of T = 510 K and ΔT = 440 K, where η 0 is a well-known conventional energy conversion efficiency. It was thus found that the temperature dependences of TE properties have a significant influence on η. When one evaluates the accurate achievement rate of η exp obtained experimentally for a TE generator, therefore, η exp should be compared with η the estimated from the theoretical expression proposed here, not with η 0 , particularly when there is a strong non-linearity in the temperature dependence of TE properties.

Enhanced thermoelectric performance of xMoS{sub 2}–TiS{sub 2} nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Ye, Yang; Wang, Yulong; Shen, YaWei [College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009 (China); Wang, Yifeng, E-mail: yifeng.wang@njtech.edu.cn [College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009 (China); Pan, Lin [College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009 (China); Tu, Rong [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Lu, Chunhua [College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009 (China); Huang, Rong [School of Information Science and Technology, East China Normal University, Shanghai 200062 (China); Koumoto, Kunihito [Toyota Physical and Chemical Research Institute, Nagakute 4801192 (Japan)

2016-05-05

A series of nanocomposite ceramics of micro-scale TiS{sub 2} containing MoS{sub 2} nanoparticles mainly embedded along grain boundaries were prepared and investigated attempting to enhance the thermoelectric performance of TiS{sub 2}. Results show that, compared with that of pristine TiS{sub 2} ceramic, the power factor of the composites was improved by virtues of enhanced Seebeck coefficient that should be brought out due to reduced carrier concentration and electron scattering or filtering at the MoS{sub 2}/matrix interfaces. Moreover, thanks to the significantly reduced thermal conductivity that originated from the intensified multi-scale phonon scattering and the decreased electronic contribution, a maximal ZT value of 0.29 at 573 K was obtained in the sample with 3 mol % MoS{sub 2}, which is 60% higher than that of pristine TiS{sub 2}. These findings promise nanocomposite as an effective approach to suppress its thermal conduction without degradation of power factor and thus to enhance the performance of TiS{sub 2}-based thermoelectrics. - Highlights: • Nanocomposites of TiS{sub 2} including nano-MoS{sub 2} were prepared by SPS. • Distribution of MoS{sub 2} mainly along the boundaries was confirmed. • Seebeck coefficient increased by reduced electron density with electron filtering. • Thermal conductivity decreased by suppressed phonon and electron transport. • A maximal ZT value of 0.29 was obtained at 573 K.

Using Peltier cells to study solid-liquid-vapour transitions and supercooling

International Nuclear Information System (INIS)

Torzo, Giacomo; Soletta, Isabella; Branca, Mario

2007-01-01

We propose an apparatus for teaching experimental thermodynamics in undergraduate introductory courses, using thermoelectric modules and a real-time data acquisition system. The device may be made at low cost, still providing an easy approach to the investigation of liquid-solid and liquid-vapour phase transitions and of metastable states (supercooling). The thermoelectric module (a technological evolution of the thermocouple) is by itself an interesting subject that offers a clear example of both thermo-electric (Seebeck effect) and electro-thermal (Peltier effect) energy transformation. We report here some cooling/heating measurements for several liquids and mixtures, including water, salt/water, ethanol/water and sodium acetate, showing how to evaluate the phenomena of freezing point depression and elevation, and how to evaluate the water latent heat

Fine Art of Thermoelectricity.

Science.gov (United States)

Brus, Viktor V; Gluba, Marc; Rappich, Jörg; Lang, Felix; Maryanchuk, Pavlo D; Nickel, Norbert H

2018-02-07

A detailed study of hitherto unknown electrical and thermoelectric properties of graphite pencil traces on paper was carried out by measuring the Hall and Seebeck effects. We show that the combination of pencil-drawn graphite and brush-painted poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) films on regular office paper results in extremely simple, low-cost, and environmentally friendly thermoelectric power generators with promising output characteristics at low-temperature gradients. The working characteristics can be improved even further by incorporating n-type InSe flakes. The combination of pencil-drawn n-InSe:graphite nanocomposites and brush-painted PEDOT:PSS increases the power output by 1 order of magnitude.

Design and fabrication of a terminating type MEMS microwave power sensor

International Nuclear Information System (INIS)

Xu Yinglin; Liao Xiaoping

2009-01-01

A terminating type MEMS microwave power sensor based on the Seebeck effect and compatible with the GaAs MMIC process is presented. An electrothermal model is introduced to simulate the heat transfer behavior and temperature distribution. The sensor measured the microwave power from -20 to 20 dBm up to 20 GHz. The sensitivity of the sensor is 0.27 mV/mW at 20 GHz, and the input return loss is less than -26 dB over the entire experiment frequency range. In order to improve the sensitivity, four different types of coplanar waveguide (CPW) were designed and the sensitivity was significantly increased by about a factor of 2.

Thermoelectric Properties of Hot-Pressed and PECS-Sintered Magnesium-Doped Copper Aluminum Oxide

Science.gov (United States)

Liu, Chang; Morelli, Donald T.

2011-05-01

Copper aluminum oxide (CuAlO2) is considered as a potential candidate for thermoelectric applications. Partially magnesium-doped CuAlO2 bulk pellets were fabricated using solid-state reactions, hot-pressing, and pulsed electric current sintering (PECS) techniques. X-ray diffraction and scanning electron microscopy were adopted for structural analysis. High-temperature transport property measurements were performed on hot-pressed samples. Electrical conductivity increased with Mg doping before secondary phases became significant, while the Seebeck coefficient displayed the opposite trend. Thermal conductivity was consistently reduced as the Mg concentration increased. Effects of Mg doping, preparation conditions, and future modification on this material's properties are discussed.

Effects of ball milling on microstructures and thermoelectric properties of higher manganese silicides

Energy Technology Data Exchange (ETDEWEB)

Chen, Xi [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712 (United States); Shi, Li, E-mail: lishi@mail.utexas.edu [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX 78712 (United States); Zhou, Jianshi; Goodenough, John B. [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX 78712 (United States)

2015-08-25

Highlights: • The already low κ{sub L} of HMS can be suppressed further by decreasing the grain size. • The ball milling process can lead to the formation of secondary MnSi and W/C-rich phases. • The formation of the MnSi ad W/C rich phases is found to suppress the thermoelectric power factor. - Abstract: Bulk nanostructured higher manganese silicide (HMS) samples with different grain size are prepared by melting, subsequent ball milling (BM), and followed by spark plasma sintering (SPS). The effects of BM time on the microstructures and thermoelectric properties of these samples are investigated. It is found that BM effectively reduces the grain size to about 90 nm in the sample after SPS, which leads to a decrease in both the thermal conductivity and electrical conductivity. By prolonging the BM time, MnSi and tungsten/carbon-rich impurity phases are formed due to the impact-induced decomposition of HMS and contamination from the tungsten carbide jar and balls during the BM, respectively. These impurities result in a reduced Seebeck coefficient and increased thermal conductivity above room temperature. The measured size-dependent lattice thermal conductivities agree qualitatively with the reported calculation results based on a combined phonon and diffuson model. The size effects are found to be increasingly significant as temperature decreases. Because of the formation of the impurity phases and a relatively large grain size, the ZT values are not improved in the ball-milled HMS samples. These findings suggest the need of alternative approaches for the synthesis of pure HMS with further reduced grain size and controlled impurity doping in order to enhance the thermoelectric figure-of-merit of HMS via nanostructuring.

Major enhancement of the thermoelectric performance in Pr/Nb-doped SrTiO3 under strain

KAUST Repository

Amin, B.; Alshareef, Husam N.; Schwingenschlö gl, Udo; Singh, Nirpendra; Tritt, T. M.

2013-01-01

site generate n-type doping and thus improve the thermoelectric performance as compared to pristine SrTiO3. Further enhancement is achieved by the application of strain, for example, of the Seebeck coefficient by 21% for Sr0.95Pr0.05TiO3 and 10% for Sr

Bulletin of Materials Science | Indian Academy of Sciences

Indian Academy of Sciences (India)

... 100 Hz–1 MHz. Detailed study of dielectric constant and electrical conductivity reveals a phase change around 400 K, which is quite different from those in the other materials of the same type. Further, the seebeck coefficient () is temperature independent. The conduction is interpreted as due to small polaron hopping.

Exploring the doping effects of Ag in p-type PbSe compounds with enhanced thermoelectric performance

International Nuclear Information System (INIS)

Wang Shanyu; Zheng Gang; Luo Tingting; She Xiaoyu; Li Han; Tang Xinfeng

2011-01-01

In this study, we prepared a series of Ag-doped PbSe bulk materials by a melting-quenching process combined with a subsequent spark plasma sintering process, and systematically investigated the doping effects of Ag on the thermoelectric properties. Ag substitution in the Pb site does not introduce resonant levels near the valence band edge or detectable change in the density of state in the vicinity of the Fermi level, but moves the Fermi level down and increases the carrier concentration to a maximum value of ∼4.7 × 10 19 cm -3 which is still insufficient for heavily doped PbSe compounds. Nonetheless, the non-monotonic variation in carrier concentration with increasing Ag content indicates that Ag doping reaches the solution limit at ∼1.0% and the excessive Ag presumably acts as donors in the materials. Moreover, the large energy gap of the PbSe-based material wipes off significant 'roll-over' in the Seebeck coefficient at elevated temperatures which gives rise to high power factors, being comparable to p-type Te analogues. Consequently, the maximum ZT reaches ∼1.0 for the 1.5% Ag-doped samples with optimized carrier density, which is ∼70% improvement in comparison with an undoped sample and also superior to the commercialized p-type PbTe materials.

Our Roads, A Large Thermoelectric Generator

Science.gov (United States)

Weiss, I.

2017-12-01

If asphalt can heat up from the solar radiation shining onto it directly, then it will be able to heat water in pipes within the pavement. The heat from the warm water can then be harvested into usable electrical energy, because heat energy can be transformed into electrical energy using the Seebeck Effect. The Seebeck Effect is when a temperature difference causes electrons to move away from the heat, creating an electrical charge. My experiment showed my research-based hypothesis correct. I hypothesized that if asphalt can heat up from the solar radiation shining onto it directly, then it would be able to warm a water system and usable energy could be harvested, because heat energy can be transformed into electrical energy. Asphalt pavement does not reflect the sunlight and hence heats up faster than a light surface that would reflect the sunlight. This means the asphalt absorbs the sunlight and gives off heat, which is wasted energy. By turning heat energy into electricity, cities can provide a source of clean, green energy and reduce their reliance on fossil fuels. The heat given off by asphalt increases the temperature of the air around, contributing to what is known as the urban heat island effect. This heating contributes to the formation of smog and ozone depletion. With the population still growing this would mean increasing city sizes, greater heat island effect and hence an increase in smog and ozone depletion. By harvesting the heat energy in the pavement through my setup, cities can not only create green energy but also reduce the heat radiated from pavement. Converting my system to a neighborhood street would produce higher output. My street measures 800 feet long by 35 feet wide. That gives us 28,000 square feet. At the rate of 5 volts per minute for a 2 square foot area, my street would be able to produce 70,000 volts per minute.

Structure and thermoelectric properties of Ca2−xSrxFeMoO6 (0 ≤ x ≤ 0.3) double-perovskite oxides

DEFF Research Database (Denmark)

Sugahara, Tohru; Van Nong, Ngo; Ohtaki, Michitaka

2012-01-01

temperature to ca. 102 S cm−1 at 1250 K. At room temperature, although the values of the oxides increased with increasing substitution level, x, the values maintained almost the same values at high temperature range of 1000–1250 K. The absolute values of the Seebeck coefficient, S, for the samples at x

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

International Nuclear Information System (INIS)

Song, Erdong; Martinez, Julio A; Li, Qiming; Pan, Wei; Wang, George T; Swartzentruber, Brian

2016-01-01

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power. (paper)

Statistical Analysis of the Figure of Merit of a Two-Level Thermoelectric System: A Random Matrix Approach

KAUST Repository

Abbout, Adel; Ouerdane, Henni; Goupil, Christophe

2016-01-01

Using the tools of random matrix theory we develop a statistical analysis of the transport properties of thermoelectric low-dimensional systems made of two electron reservoirs set at different temperatures and chemical potentials, and connected through a low-density-of-states two-level quantum dot that acts as a conducting chaotic cavity. Our exact treatment of the chaotic behavior in such devices lies on the scattering matrix formalism and yields analytical expressions for the joint probability distribution functions of the Seebeck coefficient and the transmission profile, as well as the marginal distributions, at arbitrary Fermi energy. The scattering matrices belong to circular ensembles which we sample to numerically compute the transmission function, the Seebeck coefficient, and their relationship. The exact transport coefficients probability distributions are found to be highly non-Gaussian for small numbers of conduction modes, and the analytical and numerical results are in excellent agreement. The system performance is also studied, and we find that the optimum performance is obtained for half-transparent quantum dots; further, this optimum may be enhanced for systems with few conduction modes.

Comparison of four-probe thermal and thermoelectric transport measurements of thin films and nanostructures with microfabricated electro-thermal transducers

Science.gov (United States)

Kim, Jaehyun; Fleming, Evan; Zhou, Yuanyuan; Shi, Li

2018-03-01

Two different four-probe thermal and thermoelectric measurement methods have been reported for measuring the thermal conductivity, Seebeck coefficient, and electrical conductivity of suspended thin films and nanostructures with microfabricated electro-thermal transducers. The thermal contact resistance was extracted from the measured thermoelectric voltage drop at the contacts in the earlier four-probe method based on the assumption of constant thermal and thermoelectric properties along the sample. In comparison, the latter four-probe method can directly obtain the contact thermal resistance together with the intrinsic sample thermal resistance without making this assumption. Here, the measurement theory and data reduction processes of the latter four-probe measurement method are re-examined and improved. The measured thermal conductivity result of this improved method on representative thin film samples are found to agree with those obtained from the earlier four-probe method, which has obtained similar Seebeck coefficient and electrical conductivity as those measured with a different method for a supported thin film. The agreement provides further validation of the latest four-probe thermal transport measurement method of thin films and nanostructures.

Thermoelectric properties of p-type sb-doped Cu2SnSe3 near room and mid temperature applications

Science.gov (United States)

Prasad, K. Shyam; Rao, Ashok; Chauhan, Nagendra S.; Bhardwaj, Ruchi; Vishwakarma, Avinash; Tyagi, Kriti

2018-02-01

In this study, we report low and mid temperature range thermoelectric properties of Sb-substituted Cu2SnSe3 compounds. The Cu2Sn1- x Sb x Se3 (0 ≤ x ≤ 0.04) alloys were prepared using conventional solid-state reaction followed by spark plasma sintering. The crystal structure was characterized using XRD and it reveals that all the samples exhibit cubic structure with space group -4/3m. The electrical transport characteristics indicate degenerate semiconducting behavior. Electrical resistivity was found to follow small polaron hopping (SPH) model in the entire temperature range of investigation. The Seebeck coefficient data reveals that the majority of charge carriers are holes and the analysis of Seebeck coefficient data gives negative values of Fermi energy indicating that the Fermi energy is below the edge of valence band. The electronic contribution ( κ e) for total thermal conductivity is found to be less than 1%. The maximum ZT value of 0.64 is observed for the sample with x = 0.03 (at 700 K) which is approximately 2.3 times that of the pristine sample.

Statistical Analysis of the Figure of Merit of a Two-Level Thermoelectric System: A Random Matrix Approach

KAUST Repository

Abbout, Adel

2016-08-05

Using the tools of random matrix theory we develop a statistical analysis of the transport properties of thermoelectric low-dimensional systems made of two electron reservoirs set at different temperatures and chemical potentials, and connected through a low-density-of-states two-level quantum dot that acts as a conducting chaotic cavity. Our exact treatment of the chaotic behavior in such devices lies on the scattering matrix formalism and yields analytical expressions for the joint probability distribution functions of the Seebeck coefficient and the transmission profile, as well as the marginal distributions, at arbitrary Fermi energy. The scattering matrices belong to circular ensembles which we sample to numerically compute the transmission function, the Seebeck coefficient, and their relationship. The exact transport coefficients probability distributions are found to be highly non-Gaussian for small numbers of conduction modes, and the analytical and numerical results are in excellent agreement. The system performance is also studied, and we find that the optimum performance is obtained for half-transparent quantum dots; further, this optimum may be enhanced for systems with few conduction modes.

Thermoelectric Properties of Two-Dimensional Molybdenum-based MXenes

KAUST Repository

Kim, Hyunho

2017-07-05

MXenes are an interesting class of 2D materials consisting of transition metal carbides and nitrides, which are currently a subject of extensive studies. Although there have been theoretical calculations estimating the thermoelectric properties of MXenes, no experimental measurements have been reported so far. In this report, three compositions of Mo-based MXenes (Mo2CTx, Mo2TiC2Tx, and Mo2Ti2C3Tx) have been synthesized and processed into free-standing binder-free papers by vacuum-assisted filtration, and their electrical and thermoelectric properties are measured. Upon heating to 800 K, these MXene papers exhibit high conductivity and n-type Seebeck coefficient. The thermoelectric power reaches 3.09×10-4 W m-1 K-2 at 803 K for the Mo2TiC2Tx MXene. While the thermoelectric properties of MXenes do not reach that of the best materials, they exceed their parent ternary and quaternary layered carbides. Mo2TiC2Tx shows the highest electrical conductivity in combination with the largest Seebeck coefficient of the three 2D materials studied.

Thermoelectric properties of layered antiferromagnetic CuCrSe2

International Nuclear Information System (INIS)

Tewari, Girish C.; Tripathi, T.S.; Yamauchi, Hisao; Karppinen, Maarit

2014-01-01

Here we study thermoelectric and magnetic properties of CuCrSe 2 samples sintered at various temperatures. Structural analysis with XRD shows an order-disorder transition for Cr atoms when the sintering temperature is increased above 1273 K. Metal-like electrical resistivity and anomalously large Seebeck coefficient are found about room temperature. Analysis of electrical conductivity and Seebeck coefficient of the partially-disordered phase suggests hopping conduction of charge carriers. For both the ordered and disordered phases magnetic susceptibility follows Curie–Weiss temperature dependence at high temperatures above 150 K and shows an antiferromagnetic transition around 55 K. For the disordered phase, the effective magnetic moment is determined at 3.62 μ B ; this low value in comparison to the spin only value for Cr 3+ of 3.89 μ B indicates spin fluctuations in the paramagnetic state. The thermal conductivity in these phases is low and dominated by the lattice contribution. Values for the thermoelectric figure of merit (ZT) at room temperature are estimated to be 0.17 and 0.05 for the ordered and disordered phases, respectively. - Highlights: • Thermoelectric and magnetic properties of CuCrSe 2 samples are investigated. • The properties strongly depend on the degree of order of chromium atoms. • The degree of order is controlled by the sintering temperature. • Room-temperature figure of merit is estimated at 0.17 for the ordered phase. • For the disordered phase the figure of merit is lower

The enhanced thermoelectric properties of BiMnO3 ceramics by Sr-doped

Science.gov (United States)

Yu, X. Y.; Wang, Y.; Peng, J. J.; Wang, B. L.; Wei, K. L.; Liu, J. M.; He, Q. Y.

2018-04-01

A series of Bi1‑xSrxMnO3 (x = 0.40, 0.45, 0.50, 0.55) samples labeled as BSMO040, BSMO045, BSMO050, and BSMO055, respectively, have been fabricated by the modified solid-state reaction method. The crystal structural, microstructures, and chemical states of the elements and the thermoelectric properties were investigated with respect to the partial substitution of Sr2+ for Bi3+. The samples were characterized by x-ray diffraction (XRD) at 723 K, scanning electron microscopy (SEM), and x-ray photoelectron spectroscopy (XPS). Moreover, their electrical conductivities (σ), Seebeck coefficients (S), and thermal conductivities (κ) were determined. All the samples exhibited orthorhombic structure. The partial substitution of Sr2+ for Bi3+ caused valence shift of some Mn ions from +3 to +4 to maintain electric charge balance. The change in electric charge led to an increase in electron concentration, and thus, the electrical conductivity as well as the absolute value of Seebeck coefficient increased. Consequently, the power factor also increased. The highest power factor (0.3 × 10‑4 Wm‑1 K‑1) was obtained for BSMO055 at 1023 K. Moreover, the highest dimensionless figure-of-merit (ZT) obtained in this study was 0.015 for BSMO055 at 1073 K. It can be concluded that the partial substitution of Sr2+ for Bi3+ in the Bi1‑xSrxMnO3 samples (x = 0.40, 0.45, 0.50, and 0.55) improved the thermoelectric properties effectively.

Synthesis, characterization and investigation of thermoelectric properties of selected metal borides; Synthese, Charakterisierung und Untersuchung thermoelektrischer Eigenschaften ausgewaehlter Metallboride

Energy Technology Data Exchange (ETDEWEB)

Stober, Frederick

2012-06-04

The present work deals with the high-temperature thermoelectric properties of transition metal [eg V, Cr, Mn, Ni, Cu] and lanthanide [e.g. Sc, Y, Gd, Er, Dy]-borides. In particular, intercalation compounds of beta-rhombohedral boron, compounds of the type MB{sub 66}, dodecaborides and hexaborides were examined. In the case of intercalation compounds of beta-rhombohedral boron it was found that the incorporation of metals such as Sc, Mn or Cu result in favorable thermoelectric properties. The reason is most likely the preferred occupation of the metal position M2 instead of M4. Composites, for example, DyB{sub 66}-DyB{sub 12} show high electrical conductivities, high Seebeck effects at high temperatures due to the presence of DyB{sub 12} and low thermal conductivities as a result of the DyB{sub 66} matrix. At 1100K the composite DyB{sub 66}-DyB{sub 12} shows a ZT value of 0.55, thus exceeding the ZT of boron carbide (B{sub 13}C{sub 2}) at this temperature which is considered the best p-type boride material. A composite of ErB{sub 12}-ErB{sub 4}-ErB{sub 2} has negative Seebeck coefficients and shows a ZT value of 0.5 at 840K. Furthermore, the structure of tetragonal Scandiumdodecaboride ScB{sub 12} was solved on the basis of synchrotron data from a crystalline powder, after it has been debated for decades but never fully resolved.

Non-stoichiometry and properties of SnTe left angle Cd right angle semiconducting phase of variable composition

International Nuclear Information System (INIS)

Rogacheva, E.I.; Nashchekina, O.N.

2006-01-01

It was established that the dependences of microhardness, hole concentration, electrical conductivity, and the Seebeck coefficient on composition in the Sn 0.984 Te-Cd and Sn 0.984 Te-CdTe solid solutions based on non-stoichiometric tin telluride exhibit non-monotonic behavior. The effects connected with the interaction between intrinsic and impurity defects and with critical phenomena accompanying a transition to the impurity continuum were isolated. The results obtained in this work represent another evidence for our proposition about the universal character of critical phenomena accompanying the transition from an impurity discontinuum to an impurity continuum in solid solutions. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

Thermoelectric properties of β-boron and some boron compounds. Final report, August 1981-September 1984

International Nuclear Information System (INIS)

Slack, G.A.; Rosolowski, J.H.; Miller, M.L.; Huseby, I.C.

1984-12-01

The thermoelectric properties, that is the Seebeck coefficient, and electrical and thermal conductivity, of doped β-boron have been measured from 300 to 1600 K. Most of the useful doping elements are transition metals and occupy interstitial sites in the lattice. The highest figure of merit so far achieved at 1000 K is ZT = 0.11 for P-type, polycrystalline, hot-pressed β-boron doped with copper. Higher values may be achievable once a better P-type dopant is found. Some experiments on B 68 Y, α-B 12 Al, B 4 C, and B 6 Si are described. Transition metals appear to be effective dopants for B 68 Y and B 4 C

Effect of local atomic and electronic structures on thermoelectric properties of chemically substituted CoSi

Science.gov (United States)

Hsu, C. C.; Pao, C. W.; Chen, J. L.; Chen, C. L.; Dong, C. L.; Liu, Y. S.; Lee, J. F.; Chan, T. S.; Chang, C. L.; Kuo, Y. K.; Lue, C. S.

2014-05-01

We report the effects of Ge partial substitution for Si on local atomic and electronic structures of thermoelectric materials in binary compound cobalt monosilicides (\\text{CoSi}_{1-x}\\text{Ge}_{x}\\text{:}\\ 0 \\le x \\le 0.15 ). Correlations between local atomic/electronic structure and thermoelectric properties are investigated by means of X-ray absorption spectroscopy. The spectroscopic results indicate that as Ge is partially substituted onto Si sites at x \\le 0.05 , Co in CoSi1-xGex gains a certain amount of charge in its 3d orbitals. Contrarily, upon further replacing Si with Ge at x \\ge 0.05 , the Co 3d orbitals start to lose some of their charge. Notably, thermopower is strongly correlated with charge redistribution in the Co 3d orbital, and the observed charge transfer between Ge and Co is responsible for the variation of Co 3d occupancy number. In addition to Seebeck coefficient, which can be modified by tailoring the Co 3d states, local lattice disorder may also be beneficial in enhancing the thermoelectric properties. Extended X-ray absorption fine structure spectrum results further demonstrate that the lattice phonons can be enhanced by Ge doping, which results in the formation of the disordered Co-Co pair. Improvements in the thermoelectric properties are interpreted based on the variation of local atomic and electronic structure induced by lattice distortion through chemical substitution.

The Effects of Doping and Processing on the Thermoelectric Properties of Platinum Diantimonide Based Materials for Cryogenic Peltier Cooling Applications

Science.gov (United States)

Waldrop, Spencer Laine

The study of thermoelectrics is nearly two centuries old. In that time a large number of applications have been discovered for these materials which are capable of transforming thermal energy into electricity or using electrical work to create a thermal gradient. Current use of thermoelectric materials is in very niche applications with contemporary focus being upon their capability to recover waste heat. A relatively undeveloped region for thermoelectric application is focused upon Peltier cooling at low temperatures. Materials based on bismuth telluride semiconductors have been the gold standard for close to room temperature applications for over sixty years. For applications below room temperature, semiconductors based on bismuth antimony reign supreme with few other possible materials. The cause of this diculty in developing new, higher performing materials is due to the interplay of the thermoelectric properties of these materials. The Seebeck coecient, which characterizes the phenomenon of the conversion of heat to electricity, the electrical conductivity, and the thermal conductivity are all interconnected properties of a material which must be optimized to generate a high performance thermoelectric material. While for above room temperature applications many advancements have been made in the creation of highly ecient thermoelectric materials, the below room temperature regime has been stymied by ill-suited properties, low operating temperatures, and a lack of research. The focus of this work has been to investigate and optimize the thermoelectric properties of platinum diantimonide, PtSb2, a nearly zero gap semiconductor. The electronic properties of PtSb2 are very favorable for cryogenic Peltier applications, as it exhibits good conductivity and large Seebeck coecient below 200 K. It is shown that both n- and p-type doping may be applied to this compound to further improve its electronic properties. Through both solid solution formation and processing

Effets thermoelectrique et thermomagnetique du yttrium barium copper oxide monocristallin

Science.gov (United States)

Ghamlouche, Hassan

1998-09-01

Des la decouverte des supraconducteurs a haute temperature critique, les recherches se sont intensifiees afin de comprendre les mecanismes qui sont a l'origine des proprietes de ces materiaux L'etat mixte, tout comme l'etat supraconducteur pur et l'etat normal, a fait l'objet de nombreux travaux de recherche. En particulier, la structure des vortex a l'etat mixte, et leur mouvement sous l'effet d'une force quelconque, etaient et restent le centre de preoccupation. Les effets thermoelectrique (Seebeck) et thermomagnetique (Nernst) sont parmi les differentes mesures qui peuvent donner de l'information sur les etats des vortex a l'etat mixte. L'avantage essentiel de ces deux effets est l'absence d'un courant electrique applique. Ce dernier peut donner des perturbations indesirables durant les mesures. D'autre pari, nous avons utilise la methode CA (Courant Alternatif) pour effectuer nos mesures. Cette methode est caracterisee par une meilleure resolution par rapport a la methode CC (Courant Continu) conventionnelle. Nous avons etudie autant des echantillons macles que des echantillons sans macles. D'abord nous avons teste notre montage a champ magnetique nul. Nous avons alors montre que le pic rapporte par certains dans l'effet Seebeck a la transition supraconductrice ne correspond pas a une realite physique mais a un artefact experimental. On avait associe ce pic aux fluctuations. Par la suite, nous avons mis en evidence et etudie pour la premiere fois avec les effets Seebeck et Nernst le phenomene de la fusion du reseau de vortex grace a des mesures sur les echantillons sans macles. Cette etude s'est faite pour deux concentrations d'oxygene differentes et pour un gradient de temperature parallele, consecutivement, aux deux axes cristallographiques dans le plan ab. Finalement, nous avons etudie l'effet des plans de maclage sur le mouvement des vortex. Ceci a ete realise en appliquant le gradient de temperature selon trois directions differentes (0, 45 et 90°) avec

Transport and superconducting properties of Fe-based superconductors: a comparison between SmFeAsO1-xFx and Fe1+yTe1-xSex

Science.gov (United States)

Tropeano, M.; Pallecchi, I.; Cimberle, M. R.; Ferdeghini, C.; Lamura, G.; Vignolo, M.; Martinelli, A.; Palenzona, A.; Putti, M.

2010-05-01

In this paper we carry out a direct comparison between transport and superconducting properties—namely resistivity, magnetoresistivity, Hall effect, Seebeck effect, thermal conductivity, upper critical field—of two different families of Fe-based superconductors, which can be viewed in many respects as end members: SmFeAsO1 - xFx with the largest Tc and the largest anisotropy and Fe1 + yTe1 - xSex, with the largest Hc2, the lowest Tc and the lowest anisotropy. In the case of the SmFeAsO1 - xFx series, we find that a single-band description allows us to extract an approximate estimation of band parameters such as carrier density and mobility from experimental data, although the behaviour of the Seebeck effect as a function of doping demonstrates that a multiband description would be more appropriate. On the contrary, experimental data for the Fe1 + y(Te1 - x, Sex) series exhibit a strongly compensated behaviour, which can be described only within a multiband model. In the Fe1 + y(Te1 - x, Sex) series, the role of the excess Fe, tuned by Se stoichiometry, is found to be twofold: on one hand it dopes electrons in the system and on the other hand it introduces localized magnetic moments, responsible for Kondo like scattering and likely pairbreaking of Cooper pairs. Hence, Fe excess also plays a crucial role in determining superconducting properties such as the Tc and the upper critical field Hc2. The huge Hc2 values of the Fe1 + yTe1 - xSex samples are described by a dirty limit law, opposed to the clean limit behaviour of the SmFeAsO1 - xFx samples. Hence, magnetic scattering by excess Fe seems to drive the system in the dirty regime, but its detrimental pairbreaking role seems not to be as severe as predicted by theory. This issue has yet to be clarified, addressing the more fundamental issue of the interplay between magnetism and superconductivity.

High-resolution structural characterization and magnetic properties of epitaxial Ce-doped yttrium iron garnet thin films

Science.gov (United States)

Li, Zhong; Vikram Singh, Amit; Rastogi, Ankur; Gazquez, Jaume; Borisevich, Albina Y.; Mishra, Rohan; Gupta, Arunava

2017-07-01

Thin films of magnetic garnet materials, e.g. yttrium iron garnet (Y3Fe5O12, YIG), are useful for a variety of applications including microwave integrated circuits and spintronics. Substitution of rare earth ions, such as cerium, is known to enhance the magneto-optic Kerr effect (MOKE) as compared to pure YIG. Thin films of Ce0.75Y2.25Fe5O12 (Ce:YIG) have been grown using the pulsed laser deposition (PLD) technique and their crystal structure examined using high resolution scanning transmission electron microscopy. Homogeneous substitution of Ce in YIG, without oxidation to form a separate CeO2 phase, can be realized in a narrow process window with resulting enhancement of the MOKE signal. The thermally generated signal due to spin Seebeck effect for the optimally doped Ce:YIG films has also been investigated.

Metallic spintronic devices

CERN Document Server

Wang, Xiaobin

2014-01-01

Metallic Spintronic Devices provides a balanced view of the present state of the art of metallic spintronic devices, addressing both mainstream and emerging applications from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Featuring contributions from well-known and respected industrial and academic experts, this cutting-edge work not only presents the latest research and developments but also: Describes spintronic applications in current and future magnetic recording devicesDiscusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modelingExplores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysisInvestigates spintronic device write and read optimization in light of spintronic memristive effectsConsiders spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effectsProposes unique solutions for ...

Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGe

Science.gov (United States)

Vandersande, Jan W.; Wood, Charles; Draper, Susan

1987-01-01

Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.

High-Temperature Performance of Stacked Silicon Nanowires for Thermoelectric Power Generation

Science.gov (United States)

Stranz, Andrej; Waag, Andreas; Peiner, Erwin

2013-07-01

Deep reactive-ion etching at cryogenic temperatures (cryo-DRIE) has been used to produce arrays of silicon nanowires (NWs) for thermoelectric (TE) power generation devices. Using cryo-DRIE, we were able to fabricate NWs of large aspect ratios (up to 32) using a photoresist mask. Roughening of the NW sidewalls occurred, which has been recognized as beneficial for low thermal conductivity. Generated NWs, which were 7 μm in length and 220 nm to 270 nm in diameter, were robust enough to be stacked with a bulk silicon chip as a common top contact to the NWs. Mechanical support of the NW array, which can be created by filling the free space between the NWs using silicon oxide or polyimide, was not required. The Seebeck voltage, measured across multiple stacks of up to 16 bulk silicon dies, revealed negligible thermal interface resistance. With stacked silicon NWs, we observed Seebeck voltages that were an order of magnitude higher than those observed for bulk silicon. Degradation of the TE performance of silicon NWs was not observed for temperatures up to 470°C and temperature gradients up to 170 K.

Absence of confinement in (SrTiO3)/( SrTi0.8Nb0.2O3 ) superlattices

Science.gov (United States)

Bouzerar, G.; Thébaud, S.; Bouzerar, R.; Pailhès, S.; Adessi, Ch.

2018-03-01

The reduction of dimensionality is considered an efficient pathway to boost the performances of thermoelectric materials. Quantum confinement of the carriers is expected to induce large Seebeck coefficients (S ) and it also suppresses the thermal conductivity by increasing the phonon scattering processes. However, quantum confinement in superlattices is not always easy to achieve and needs to be carefully validated. In the past decade, large values of S have been measured in (SrTiO3)/(SrTi0.8Nb0.2O3 ) superlattices [H. Ohta et al., Nat. Mater. 6, 129 (2007), 10.1038/nmat1821; Y. Mune et al., Appl. Phys. Lett. 91, 192105 (2007), 10.1063/1.2809364]. In the δ -doped compound, the reported S was almost six times larger than that of the bulk material. This huge increase has been attributed to the two-dimensional carrier confinement in the doped regions. Here, we demonstrate that the experimental data are well explained quantitatively assuming delocalized electrons in both in-plane and growth directions. Moreover, we rule out the confined electron hypothesis whose signature would be the suppression of the Seebeck coefficient. This strongly suggests that the presupposed confinement picture in these superlattices is unlikely.

Thermoelectric properties of Cu/Ag doped type-III Ba24Ge100 clathrates

Science.gov (United States)

Fu, Jiefei; Su, Xianli; Yan, Yonggao; Liu, Wei; Zhang, Zhengkai; She, Xiaoyu; Uher, Ctirad; Tang, Xinfeng

2017-09-01

Type-III Ba24Ge100 clathrates possess low thermal conductivity and high electrical conductivity at room temperature and, as such, have a great potential as thermoelectric materials for power generation. However, the Seebeck coefficient is very low due to the intrinsically high carrier concentration. In this paper, a series of Ba24CuxGe100-x and Ba24AgyGe100-y specimens were prepared by vacuum melting combined with the subsequent spark plasma sintering (SPS) process. Doping Cu or Ag on the Ge site not only suppresses the concentration of electrons but it also decreases the thermal conductivity. In addition, the carrier mobility and the Seebeck coefficient increase due to the decrease in the carrier concentration. Thus, the power factor is greatly improved, leading to an improvement in the dimensionless figure of merit ZT. Cu-doped Ba24Cu6Ge94 reaches the maximum ZT value of about 0.17 at 873 K, while Ag-doped Ba24Ag6Ge94 attains the dimensionless figure of merit ZT of 0.31 at 873 K, more than 2 times higher value compared to un-doped Ba24Ge100.

Colligative thermoelectric transport properties in n-type filled CoSb3 determined by guest electrons in a host lattice

International Nuclear Information System (INIS)

Lim, Young Soo; Park, Kwan-Ho; Tak, Jang Yeul; Lee, Soonil; Seo, Won-Seon; Park, Cheol-Hee; Kim, Tae Hoon; Park, PumSuk; Kim, Il-Ho; Yang, Jihui

2016-01-01

Among many kinds of thermoelectric materials, CoSb 3 has received exceptional attention for automotive waste heat recovery. Its cage structure provides an ideal framework for the realization of phonon-glass electron-crystal strategy, and there have been numerous reports on the enhanced thermoelectric performance through the independent control of the thermal and electrical conductivity by introducing fillers into its cage sites. Herein, we report colligative thermoelectric transport properties in n-type CoSb 3 from the viewpoint of “guest electrons in a host lattice.” Both the Seebeck coefficient and the charge transport properties are fundamentally determined by the concentration of the guest electrons, which are mostly donated by the fillers, in the conduction band of the host CoSb 3 . Comparing this observation to our previous results, colligative relations for both the Seebeck coefficient and the mobility were deduced as functions of the carrier concentration, and thermoelectric transport constants were defined to predict the power factor in filled CoSb 3 . This discovery not only increases the degree of freedom for choosing a filler but also provides the predictability of power factor in designing and engineering the n-type filled CoSb 3 materials.

High-temperature Thermoelectric and Microstructural Characteristics of Ga Substituted on the Co-site in Cobalt-based Oxides

DEFF Research Database (Denmark)

Van Nong, Ngo; Yanagiya, S.; Sonne, Monica

2011-01-01

The effects of Ga substitution on the Co-site on the high-temperature thermoelectric properties and microstructure are investigated for the misfitlayered Ca3Co4O9 and the complex perovskite-related Sr3RECo4O10.5 (RE = rare earth) cobalt-based oxides. For both systems, substitution of Ga for Co...... results in a simultaneous increase in the Seebeck coefficient (S) and the electrical conductivity (σ), and the influence is more significant in the high temperature region. The power factor (S 2 σ) is thereby remarkably improved by Ga substitution, particularly at high temperatures. Texture factor......0.05O9 shows the best ZT value of 0.45 at 1200 K, which is about 87.5% higher than the nondoped one, a considerable improvement....

Very High Output Thermoelectric Devices Based on ITO Nanocomposites

Science.gov (United States)

Fralick, Gustave; Gregory, Otto J.

2009-01-01

A material having useful thermoelectric properties was synthesized by combining indium-tin-oxide (ITO) with a NiCoCrAlY alloy/alumina cermet. This material had a very large Seebeck coefficient with electromotive-force-versustemperature behavior that is considered to be excellent with respect to utility in thermocouples and other thermoelectric devices. When deposited in thin-film form, ceramic thermocouples offer advantages over precious-metal (based, variously, on platinum or rhodium) thermocouples that are typically used in gas turbines. Ceramic thermocouples exhibit high melting temperatures, chemical stability at high temperatures, and little or no electromigration. Oxide ceramics also resist oxidation better than metal thermocouples, cost substantially less than precious-metal thermocouples, and, unlike precious-metal thermocouples, do not exert catalytic effects.

Thermoelectric single-photon detector

International Nuclear Information System (INIS)

Kuzanyan, A A; Petrosyan, V A; Kuzanyan, A S

2012-01-01

The ability to detect a single photon is the ultimate level of sensitivity in the measurement of optical radiation. Sensors capable of detecting single photons and determining their energy have many scientific and technological applications. Kondo-enhanced Seebeck effect cryogenic detectors are based on thermoelectric heat-to-voltage conversion and voltage readout. We evaluate the prospects of CeB 6 and (La,Ce)B 6 hexaboride crystals for their application as a sensitive element in this type of detectors. We conclude that such detectors can register a single UV photon, have a fast count rate (up to 45 MHz) and a high spectral resolution of 0.1 eV. We calculate the electric potential generated along the thermoelectric sensor upon registering a UV single photon.

Spin heat accumulation induced by tunneling from a ferromagnet.

Science.gov (United States)

Vera-Marun, I J; van Wees, B J; Jansen, R

2014-02-07

An electric current from a ferromagnet into a nonmagnetic material can induce a spin-dependent electron temperature. Here, it is shown that this spin heat accumulation, when created by tunneling from a ferromagnet, produces a non-negligible voltage signal that is comparable to that due to the coexisting electrical spin accumulation and can give a different Hanle spin precession signature. The effect is governed by the spin polarization of the Peltier coefficient of the tunnel contact, its Seebeck coefficient, and the spin heat resistance of the nonmagnetic material, which is related to the electrical spin resistance by a spin-Wiedemann-Franz law. Moreover, spin heat injection is subject to a heat conductivity mismatch that is overcome if the tunnel interface has a sufficiently large resistance.

High room-temperature figure of merit of thin layers prepared by laser ablation from Bi2Te3 target

International Nuclear Information System (INIS)

Walachova, J.; Zeipl, R.; Zelinka, J.; Malina, V.; Pavelka, M.; Jelinek, M.; Studnicka, V.; Lost'ak, P.

2005-01-01

The figure of merit ZT is measured by a Harman method on simple devices prepared on single thermoelectric layers of different thicknesses. The thermoelectric layers are prepared at different conditions by laser ablation from Bi 2 Te 3 target. The best measured figure of merit ZT is for our devices ZT=2.65. This result is comparable with the results obtained on superlattices. ZT oscillated with the thickness of the layers. On some devices the Seebeck coefficient is measured and using conductivity measurements along the thermoelectric layers the thermal conductivity is estimated from ZT. The low thermal conductivity of samples is explained by the quantum size effect and by existence of few phases of type Bi 2(m+n) Te 3n in the thermoelectric layers

Electronic, phononic, and thermoelectric properties of graphyne sheets

International Nuclear Information System (INIS)

Sevinçli, Hâldun; Sevik, Cem

2014-01-01

Electron, phonon, and thermoelectric transport properties of α-, β-, γ-, and 6,6,12-graphyne sheets are compared and contrasted with those of graphene. α-, β-, and 6,6,12-graphynes, with direction dependent Dirac dispersions, have higher electronic transmittance than graphene. γ-graphyne also attains better electrical conduction than graphene except at its band gap. Vibrationally, graphene conducts heat much more efficiently than graphynes, a behavior beyond an atomic density differences explanation. Seebeck coefficients of the considered Dirac materials are similar but thermoelectric power factors decrease with increasing effective speeds of light. γ-graphyne yields the highest thermoelectric efficiency with a thermoelectric figure of merit as high as ZT = 0.45, almost an order of magnitude higher than that of graphene

Magnon rainbows filtered through phonon clouds

Science.gov (United States)

Boona, Stephen R.

2016-06-01

The study of heat flow in magnetic insulators is a topic of significant interest in spin caloritronics, especially for understanding the nuanced origins of the spin Seebeck effect (SSE). Recent work by Diniz and Costa (2016 New J. Phys. 18 052002) provides insight into this subject by presenting a microscopic model for the spectral dependence of magnon-phonon interactions in magnetic insulators, which has been a challenging puzzle for decades. Their new paper shows that phonon-mediated magnon-magnon interactions affect the lifetime of magnons differently depending on the magnon wavelength. As a result, low energy magnons transport spin more efficiently, and are more sensitive to applied magnetic fields. These results help explain some unexpected behavior in the SSE recently reported in several experiments.

Synthesis and evaluation of lead telluride/bismuth antimony telluride nanocomposites for thermoelectric applications

International Nuclear Information System (INIS)

Ganguly, Shreyashi; Zhou Chen; Morelli, Donald; Sakamoto, Jeffrey; Uher, Ctirad; Brock, Stephanie L.

2011-01-01

Heterogeneous nanocomposites of p-type bismuth antimony telluride (Bi 2−x Sb x Te 3 ) with lead telluride (PbTe) nanoinclusions have been prepared by an incipient wetness impregnation approach. The Seebeck coefficient, electrical resistivity, thermal conductivity and Hall coefficient were measured from 80 to 380 K in order to investigate the influence of PbTe nanoparticles on the thermoelectric performance of nanocomposites. The Seebeck coefficients and electrical resistivities of nanocomposites decrease with increasing PbTe nanoparticle concentration due to an increased hole concentration. The lattice thermal conductivity decreases with the addition of PbTe nanoparticles but the total thermal conductivity increases due to the increased electronic thermal conductivity. We conclude that the presence of nanosized PbTe in the bulk Bi 2−x Sb x Te 3 matrix results in a collateral doping effect, which dominates transport properties. This study underscores the need for immiscible systems to achieve the decreased thermal transport properties possible from nanostructuring without compromising the electronic properties. - Graphical abstract: PbTe nanoparticles introduced into p-type Bi 2 Te 3 by incipient wetness results in decreased lattice thermal conductivity, but also acts as an electronic dopant, resulting in an overall decrease in thermoelectric performance. Highlights: ► Composites of PbTe nanoparticles in Bi 2−x Sb x Te 3 were formed by incipient wetness. ► PbTe nanoparticles leads to decreased κ l , consistent with phonon scattering. ► PbTe nanoparticles lead to decreased S and ρ, due to increased carriers. ► Collateral doping from PbTe leads to decreased ZT with increasing concentration. ► Immiscible systems are preferred for improved ZT.

Performance of a Composite Thermoelectric Generator with Different Arrangements of SiGe, BiTe and PbTe under Different Configurations

Directory of Open Access Journals (Sweden)

Alexander Vargas-Almeida

2015-10-01

Full Text Available In this study, we analyze the role of the thermoelectric (TE properties, namely Seebeck coefficient α, thermal conductivity κ and electrical resistivity ρ, of three different materials in a composite thermoelectric generator (CTEG under different configurations. The CTEG is composed of three thermoelectric modules (TEMs: (1 two TEMs thermally and electrically connected in series (SC; (2 two branches of TEMs thermally and electrically connected in parallel (PSC; and (3 three TEMs thermally and electrically connected in parallel (TEP. In general, each of the TEMs have different thermoelectric parameters, namely a Seebeck coefficient α, a thermal conductance K and an electrical resistance R. Following the framework proposed recently, we show the effect of: (1 the configuration; and (2 the arrangements of TE materials on the corresponding equivalent figure of merit Zeq and consequently on the maximum power Pmax and efficiency η of the CTEG. Firstly, we consider that the whole system is formed of the same thermoelectric material (α1,K1,R1 = α2,K2,R2 = α3,K3,R3 and, secondly, that the whole system is constituted by only two different thermoelectric materials Entropy 2015, 17 7388 (αi,Ki,Ri ≠ αj ,Kj ,Rj 6= αl,Kl,Rl, where i, j, l can be 1, 2 or 3. In this work, we propose arrangements of TEMs, which clearly have the advantage of a higher thermoelectric figure of merit value compared to a conventional thermoelectric module. A corollary about the Zeq-max for CTEG is obtained as a result of these considerations. We suggest an optimum configuration.

Isovalent substitutes play in different ways: Effects of isovalent substitution on the thermoelectric properties of CoSi_0_._9_8B_0_._0_2

International Nuclear Information System (INIS)

Sun, Hui; Lu, Xu; Morelli, Donald T.

2016-01-01

Boron-added CoSi, CoSi_0_._9_8B_0_._0_2, possesses a very high thermoelectric power factor of 60 μW cm"−"1 K"−"2 at room temperature, which is among the highest power factors that have ever been reported for near-room-temperature thermoelectric applications. Since the electrical properties of this material have been tuned properly, isovalent substitution for its host atoms is intentionally employed to reduce the lattice thermal conductivity while maintaining the electronic properties unchanged. In our previous work, the effect of Rh substitution for Co atoms on the thermoelectric properties of CoSi_0_._9_8B_0_._0_2 has been studied. Here, we present a study of the substitution of Ge for Si atoms in this compound. Even though Ge and Rh are isovalent with their corresponding host atoms, they play different roles in determining the electrical and thermal transport properties. Through the evaluation of the lattice thermal conductivity by the Debye approximation and the comparison between the high-temperature Seebeck coefficients, we propose that Rh substitution leads to a further overlapping of the conduction and the valence bands, while Ge substitution only shifts the Fermi level upward into the conduction band. Our results show that the influence of isovalent substitution on the electronic structure cannot be ignored when the alloying method is used to improve thermoelectric properties.

Significant Electronic Thermal Transport in the Conducting Polymer Poly(3,4‐ethylenedioxythiophene)

DEFF Research Database (Denmark)

Weathers, Annie; Khan, Zia Ullah; Brooke, Robert

2015-01-01

Suspended microdevices are employed to measure the in-plane electrical conductivity, thermal conductivity, and Seebeck coefficient of suspended poly(3,4-ethylenedioxythiophene) (PEDOT) thin films. The measured thermal conductivity is higher than previously reported for PEDOT and generally increases...... with the electrical conductivity. The increase exceeds that predicted by the Wiedemann–Franz law for metals and can be explained by significant electronic thermal transport in PEDOT....

Effect of Spark Plasma Sintering on the Structure and Properties of Ti1−xZrxNiSn Half-Heusler Alloys

Directory of Open Access Journals (Sweden)

Ruth A. Downie

2014-10-01

Full Text Available XNiSn (X = Ti, Zr and Hf half-Heusler alloys have promising thermoelectric properties and are attracting enormous interest for use in waste heat recovery. In particular, multiphase behaviour has been linked to reduced lattice thermal conductivities, which enables improved energy conversion efficiencies. This manuscript describes the impact of spark plasma sintering (SPS on the phase distributions and thermoelectric properties of Ti0.5Zr0.5NiSn based half-Heuslers. Rietveld analysis reveals small changes in composition, while measurement of the Seebeck coefficient and electrical resistivities reveals that all SPS treated samples are electron doped compared to the as-prepared samples. The lattice thermal conductivities fall between 4 W·m−1·K−1 at 350 K and 3 W·m−1·K−1 at 740 K. A maximum ZT = 0.7 at 740 K is observed in a sample with nominal Ti0.5Zr0.5NiSn composition.

Crystal structure and thermoelectric properties of clathrate, Ba{sub 8}Ni{sub 3.5}Si{sub 42.0}: Small cage volume and large disorder of the guest atom

Energy Technology Data Exchange (ETDEWEB)

Roudebush, John H., E-mail: jhr@princeton.edu [Department of Chemistry, University of California, One Shields Ave., Davis, CA 95616 (United States); Orellana, Mike [Department of Chemistry, University of California, One Shields Ave., Davis, CA 95616 (United States); Bux, Sabah [Thermal Energy Conversion Technologies Group, Jet Propulsion Laboratory/California Institute of Technology, Pasadena, CA 91109 (United States); Yi Tanghong; Kauzlarich, Susan M. [Department of Chemistry, University of California, One Shields Ave., Davis, CA 95616 (United States)

2012-08-15

Samples with the type-I clathrate composition Ba{sub 8}Ni{sub x}Si{sub 46-x} have been synthesized and their structure and thermoelectric properties characterized. Microprobe analysis indicates the Ni incorporation to be 2.62{<=}x{<=}3.53. The x=3.5 phase crystallizes in the type-I clathrate structure (space group: Pm-3n) with a lattice parameter of 10.2813(3) A. The refined composition was Ba{sub 8}Ni{sub 3.5}Si{sub 42.0}, with small vacancies, 0.4 and 0.5 atoms per formula unit, at the 2a and 6c sites, respectively. The position of the Ba2 atom in the large cage was modeled using a 4-fold split position (24j site), displaced 0.18 A from the cage center (6d site). The volume of the large cage is calculated to be 146 A{sup 3}, smaller than other clathrates with similar cation displacement. The sample shows n-type behavior with a maximum of -50 {mu}V/K at 823 K above which the Seebeck coefficient decreases, suggesting mixed carriers. Lattice thermal conductivity, {kappa}{sub l}, is 55 mW/K above 600 K. - Graphical abstract: Seebeck coefficient and resistivity of the type-I clathrate Ba{sub 8}Ni{sub 3.5}Si{sub 41.0}. Structure show's large displacement of the Ba cation in the large cage (6c site). Highlights: Black-Right-Pointing-Pointer Crystal structure of the Ba{sub 8}Ni{sub 3.5}Si{sub 41.0} reported. Black-Right-Pointing-Pointer Vacancies at the 2a and 6c sites. Black-Right-Pointing-Pointer Large disorder of Ba guest atom, 0.18 A from cage center. Black-Right-Pointing-Pointer Structure is compared to Ba{sub 8}Si{sub 46} and other type-I clathrates. Black-Right-Pointing-Pointer Max Seebeck of -50.7 {mu}V/C at 798.4 K, thermal conductivity {approx}55 mW/K.

Effect of high pressure sintering and annealing on microstructure and thermoelectric properties of nanocrystalline Bi2Te2.7Se0.3 doped with Gd

Institute of Scientific and Technical Information of China (English)

Ping Zou; Guiying Xun; Song Wang; Penglei Chen; Fengzhu Huang

2014-01-01

Bi2Te2.7Se0.3 of high performance doped with Gd bulk materials was prepared by a high pressure (6.0 GPa) sintering (HPS) method at 593 K, 633 K, 673 K and 693 K. The sample was then annealed for 36 h in a vacuum at 633 K. The phase composition, crystal structure and morphology of the sample were analyzed by X-ray diffraction and scanning electron microscopy. The electric conductivity, Seebeck coefficient, and thermal conductivity aspects of the sample were measured from 298 K to 473 K. The results show that high pressure sintering and the doping with Gd has a great effect on the crystal structure and the thermoelectric properties of the samples. The samples are consisted of nanoparticles before and after annealing, and these nanostructures have good stability at high temperature. HPS together with annealing can improve the TE properties of the sample by decreasing the thermal conductivity of the sample with nanostructures. The maximum ZT value of 0.74 was obtained at 423 K for the sample, which was sintered at 673 K and then annealed at 633 K for 36 h. Compared with the zone melting sample, it was increased by 85%at 423 K. Hence the temperature of the maximum of figure of merit was increased. The results can be applied to the field of thermoelectric power generation materials.

A holistic 3D finite element simulation model for thermoelectric power generator element

International Nuclear Information System (INIS)

Wu, Guangxi; Yu, Xiong

2014-01-01

Highlights: • Development of a holistic simulation model for the thermoelectric energy harvester. • Account for delta Seebeck coefficient and carrier charge densities variations. • Solution of thermo-electric coupling problem with finite element method. • Model capable of predicting phenomena not captured by traditional models. • A simulation tool for design of innovative TEM materials and structures. - Abstract: Harvesting the thermal energy stored in the ambient environment provides a potential sustainable energy source. Thermoelectric power generators have advantages of having no moving parts, being durable, and light-weighted. These unique features are advantageous for many applications (i.e., carry-on medical devices, embedded infrastructure sensors, aerospace, transportation, etc.). To ensure the efficient applications of thermoelectric energy harvesting system, the behaviors of such systems need to be fully understood. Finite element simulations provide important tools for such purpose. Although modeling the performance of thermoelectric modules has been conducted by many researchers, due to the complexity in solving the coupled problem, the influences of the effective Seebeck coefficient and carrier density variations on the performance of thermoelectric system are generally neglected. This results in an overestimation of the power generator performance under strong-ionization temperature region. This paper presents an advanced simulation model for thermoelectric elements that considers the effects of both factors. The mathematical basis of this model is firstly presented. Finite element simulations are then implemented on a thermoelectric power generator unit. The characteristics of the thermoelectric power generator and their relationship to its performance are discussed under different working temperature regions. The internal physics processes of the TEM harvester are analyzed from the results of computational simulations. The new model

Understanding the resistivity and absolute thermoelectric power of disordered metals and alloys

International Nuclear Information System (INIS)

Gasser, Jean-Georges

2008-01-01

We recall definitions of the electronic transport properties, direct coefficients like electrical and thermal transport conductivities and crossed thermoelectric coefficients like the Seebeck, Peltier and Thomson coefficients. We discuss the links between the different electronic transport coefficients and the experimental problems in measuring these properties in liquid metals. The electronic transport properties are interpreted in terms of the scattering of electrons by 'pseudo-atoms'. The absolute thermoelectric power (ATP), thermopower or Seebeck coefficient is known as the derivative of the electrical resistivity versus energy. The key is to understand the concept of resistivity versus energy. We show that the resistivity follows approximately a 1/E curve. The structure factor modulates this curve and, for a Fermi energy corresponding to noble and divalent metals, induces a positive thermopower when the free electron theory predicts a negative one. A second modulation is introduced by the pseudopotential squared form factor or equivalently by the squared t matrix of the scattering potential. This term sometimes introduces an anti-resonance (divalent metals) which lowers the resistivity, and sometimes a resonance having an important effect on the transition metals. Following the position of the Fermi energy, the thermopower can be positive or negative. For heavy semi-metals, the density of states splits into an s and a p band, themselves different from a free electron E 0.5 curve. The electrons available to be scattered enter the Ziman formula. Thus if the density of states is not a free electron one, a third modulation of the ρ ≅ 1/E curve is needed, which also can change the sign of the thermopower. For alloys, different contributions weighted by the concentrations are needed to explain the concentration dependent resistivity or thermopower. The formalism is the same for amorphous metals. It is possible that this mechanism can be extended to high

On the crystal structure and thermoelectric properties of thin Si{sub 1–x}Mn{sub x} films

Energy Technology Data Exchange (ETDEWEB)

Erofeeva, I. V., E-mail: irfeya@mail.ru; Dorokhin, M. V.; Lesnikov, V. P.; Zdoroveishchev, A. V.; Kudrin, A. V.; Pavlov, D. A.; Usov, U. V. [Lobachevsky State University of Nizhny Novgorod, Research Institute for Physics and Technology (Russian Federation)

2016-11-15

Thin (25 nm) Si{sub 1–x}Mn{sub x}/Si(100) films are fabricated by pulsed laser deposition. According to high-resolution transmission electron microscopy data, the films have a nanotextured crystalline structure and are chemically homogeneous. The temperature dependences of the resistivity and thermopower are measured in the range of 300–500 K, and the temperature dependences of the Seebeck coefficient and power factor are calculated.

Enhancement of thermoelectric properties of Mg2Si compounds with Bi doping through carrier concentration tuning

Science.gov (United States)

Lee, Ji Eun; Cho, Sang-Hum; Oh, Min-Wook; Ryu, Byungi; Joo, Sung-Jae; Kim, Bong-Seo; Min, Bok-Ki; Lee, Hee-Woong; Park, Su-Dong

2014-07-01

The Bi-doped Mg2Si powder was fabricated with solid state reaction method and consolidated with hot pressing method and then its thermoelectric properties were investigated. The n-type transport properties were measured in all samples and temperature dependence of the electrical properties shows a behavior of degenerate semiconductors for Bi-doped samples. The electrical resistivity and the Seebeck coefficient were greatly reduced with Bi, which was mainly due to the increment of the carrier concentration. The samples have maximum carrier concentration of 8.2 × 1018 cm-3. The largest ZT value of 0.61 was achieve at 873 K for Mg2.04SiBi0.02. The Bi-doping was found to be an effective n-type dopant to adjust carrier concentration. [Figure not available: see fulltext.

High temperature thermoelectric properties of strontium titanate thin films with oxygen vacancy and niobium doping

KAUST Repository

Sarath Kumar, S. R.; Barasheed, Abeer Z.; Alshareef, Husam N.

2013-01-01

We report the evolution of high temperature thermoelectric properties of SrTiO3 thin films doped with Nb and oxygen vacancies. Structure-property relations in this important thermoelectric oxide are elucidated and the variation of transport properties with dopant concentrations is discussed. Oxygen vacancies are incorporated during growth or annealing in Ar/H2 above 800 K. An increase in lattice constant due to the inclusion of Nb and oxygen vacancies is found to result in an increase in carrier density and electrical conductivity with simultaneous decrease in carrier effective mass and Seebeck coefficient. The lattice thermal conductivity at 300 K is found to be 2.22 W m-1 K-1, and the estimated figure of merit is 0.29 at 1000 K. © 2013 American Chemical Society.

High temperature thermoelectric properties of strontium titanate thin films with oxygen vacancy and niobium doping

KAUST Repository

Sarath Kumar, S. R.

2013-08-14

We report the evolution of high temperature thermoelectric properties of SrTiO3 thin films doped with Nb and oxygen vacancies. Structure-property relations in this important thermoelectric oxide are elucidated and the variation of transport properties with dopant concentrations is discussed. Oxygen vacancies are incorporated during growth or annealing in Ar/H2 above 800 K. An increase in lattice constant due to the inclusion of Nb and oxygen vacancies is found to result in an increase in carrier density and electrical conductivity with simultaneous decrease in carrier effective mass and Seebeck coefficient. The lattice thermal conductivity at 300 K is found to be 2.22 W m-1 K-1, and the estimated figure of merit is 0.29 at 1000 K. © 2013 American Chemical Society.

Efficient p-n junction-based thermoelectric generator that can operate at extreme temperature conditions

DEFF Research Database (Denmark)

Chavez, Ruben; Angst, Sebastian; Hall, Joseph

2017-01-01

In many industrial processes a large proportion of energy is lost in the form of heat. Thermoelectric generators can convert this waste heat into electricity by means of the Seebeck effect. However, the use of thermoelectric generators in practical applications on an industrial scale is limited...... in part because electrical, thermal, and mechanical bonding contacts between the semiconductor materials and the metal electrodes in current designs are not capable of withstanding thermal-mechanical stress and alloying of the metal-semiconductor interface when exposed to the high temperatures occurring...... in many real-world applications. Here we demonstrate a concept for thermoelectric generators that can address this issue by replacing the metallization and electrode bonding on the hot side of the device by a p-n junction between the two semiconductor materials, making the device robust against...

Manipulation of charge transport in thermoelectrics

Science.gov (United States)

Zhang, Xinyue; Pei, Yanzhong

2017-12-01

While numerous improvements have been achieved in thermoelectric materials by reducing the lattice thermal conductivity (κL), electronic approaches for enhancement can be as effective, or even more. A key challenge is decoupling Seebeck coefficient (S) from electrical conductivity (σ). The first order approximation - a single parabolic band assumption with acoustic scattering - leads the thermoelectric power factor (S2σ) to be maximized at a constant reduced Fermi level (η 0.67) and therefore at a given S of 167 μV/K. This simplifies the challenge of maximization of σ at a constant η, leading to a large number of degenerate transport channels (band degeneracy, Nv) and a fast transportation of charges (carrier mobility, μ). In this paper, existing efforts on this issue are summarized and future prospectives are given.

Possible High Thermoelectric Power in Semiconducting Carbon Nanotubes ˜A Case Study of Doped One-Dimensional Semiconductors˜

Science.gov (United States)

Yamamoto, Takahiro; Fukuyama, Hidetoshi

2018-02-01

We have theoretically investigated the thermoelectric properties of impurity-doped one-dimensional semiconductors, focusing on nitrogen-substituted (N-substituted) carbon nanotubes (CNTs), using the Kubo formula combined with a self-consistent t-matrix approximation. N-substituted CNTs exhibit extremely high thermoelectric power factor (PF) values originating from a characteristic of one-dimensional materials where decrease in the carrier density increase both the electrical conductivity and the Seebeck coefficient in the low-N regime. The chemical potential dependence of the PF values of semiconducting CNTs has also been studied as a field-effect transistor and it turns out that the PF values show a noticeable maximum in the vicinity of the band edges. This result demonstrates that "band-edge engineering" will be crucial for solid development of high-performance thermoelectric materials.

Thermionic refrigeration at CNT-CNT junctions

Science.gov (United States)

Li, C.; Pipe, K. P.

2016-10-01

Monte Carlo (MC) simulation is used to study carrier energy relaxation following thermionic emission at the junction of two van der Waals bonded single-walled carbon nanotubes (SWCNTs). An energy-dependent transmission probability gives rise to energy filtering at the junction, which is predicted to increase the average electron transport energy by as much as 0.115 eV, leading to an effective Seebeck coefficient of 386 μV/K. MC results predict a long energy relaxation length (˜8 μm) for hot electrons crossing the junction into the barrier SWCNT. For SWCNTs of optimal length, an analytical transport model is used to show that thermionic cooling can outweigh parasitic heat conduction due to high SWCNT thermal conductivity, leading to a significant cooling capacity (2.4 × 106 W/cm2).

Nonlinear, anisotropic, and giant photoconductivity in intrinsic and doped graphene

Science.gov (United States)

Singh, Ashutosh; Ghosh, Saikat; Agarwal, Amit

2018-01-01

We present a framework to calculate the anisotropic and nonlinear photoconductivity for two band systems with application to graphene. In contrast to the usual perturbative (second order in the optical field strength) techniques, we calculate photoconductivity to all orders in the optical field strength. In particular, for graphene, we find the photoresponse to be giant (at large optical field strengths) and anisotropic. The anisotropic photoresponse in graphene is correlated with polarization of the incident field, with the response being similar to that of a half-wave plate. We predict that the anisotropy in the simultaneous measurement of longitudinal (σx x) and transverse (σy x) photoconductivity, with four probes, offers a unique experimental signature of the photovoltaic response, distinguishing it from the thermal-Seebeck and bolometric effects in photoresponse.

Probing thermopower on the microscale

Energy Technology Data Exchange (ETDEWEB)

Ziolkowski, Pawel; Karpinski, Gabriele; Dasgupta, Titas; Mueller, Eckhard [Institute of Materials Research, German Aerospace Center (DLR), Linder Hoehe, 51147 Cologne (Germany)

2013-01-15

Thermoelectric (TE) generators provide electrical energy from direct conversion of heat by means of the Seebeck effect; without moving parts, completely silent, and with negligible maintenance. As any other heat engine this conversion exploits only a fraction of the Carnot efficiency (Rowe (ed.), CRC Handbook of Thermoelectrics (CRC Press Inc., 1995), p. 19 1). The TE efficiency is linked to the thermoelectric figure of merit Z, which itself is given by basic material properties: Z = S{sup 2}{sigma}/{kappa}. These are the electrical conductivity {sigma}, the thermal conductivity {kappa} and the Seebeck coefficient or thermopower S, which is known as the factor of proportionality between voltage output and applied temperature difference in a given TE sample. A distinct sensitivity to the carrier concentration and structural variations make the control and stabilisation of thermopower very challenging in complex material structures since degradation by diffusion, decomposition or evaporation can be observed in many cases during synthesis, operation and even in the process of characterisation of TE semiconductors; particularly at elevated temperatures. Investigating structural and compositional properties, stability, and performance of TE materials, and consequently aiming to understand their interaction, mainly methods like X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM) or integral temperature dependent measurements of particular transport properties are used. Although TE materials research satisfies highest requirements on accuracy, the above mentioned techniques are not perfectly qualified to investigate promising material classes thoroughly. Against the background of usually complex material structures this article aims to show, that an efficient characterisation of TE materials becomes accessible for several questions by use of a spatially resolved determination of the thermopower. (Copyright copyright 2013

ZnO based transparent conductive oxide films with controlled type of conduction

Energy Technology Data Exchange (ETDEWEB)

Zaharescu, M., E-mail: mzaharescu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Mihaiu, S., E-mail: smihaiu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Toader, A. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Atkinson, I., E-mail: irinaatkinson@yahoo.com [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Calderon-Moreno, J.; Anastasescu, M.; Nicolescu, M.; Duta, M.; Gartner, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Vojisavljevic, K.; Malic, B. [Institute Jožef Stefan, Ljubljana (Slovenia); Ivanov, V.A.; Zaretskaya, E.P. [State Scientific and Production Association “Scientific-Practical Materials Research Center of the National Academy of Science Belarus, P. Brovska str.19, 220072, Minsk (Belarus)

2014-11-28

The transparent conductive oxide films with controlled type of conduction are of great importance and their preparation is intensively studied. In our work, the preparation of such films based on doped ZnO was realized in order to achieve controlled type of conduction and high concentration of the charge carriers. Sol–gel method was used for films preparation and several dopants were tested (Sn, Li, Ni). Multilayer deposition was performed on several substrates: SiO{sub 2}/Si wafers, silica-soda-lime and/or silica glasses. The structural and morphological characterization of the obtained films were done by scanning electron microscopy, X-ray diffraction, X-ray fluorescence, X-ray photoelectron spectroscopy and atomic force microscopy respectively, while spectroscopic ellipsometry and transmittance measurements were done for determination of optical properties. The selected samples with the best structural, morphological and optical properties were subjected to electrical measurement (Hall and Seebeck effect). In all studied cases, samples with good adherence and homogeneous morphology as well as monophasic wurtzite type structure were obtained. The optical constants (refractive index and extinction coefficient) were calculated from spectroscopic ellipsometry data using Cauchy model. Films with n- or p-type conduction were obtained depending on the composition, number of deposition and thermal treatment temperature. - Highlights: • Transparent conductive ZnO based thin films were prepared by the sol–gel method. • Controlled type of conduction is obtained in (Sn, Li) doped and Li-Ni co-doped ZnO films. • Hall and Seebeck measurements proved the p-type conductivity for Li-Ni co-doped ZnO films. • The p-type conductivity was maintained even after 4-months of storage. • Influence of dopant- and substrate-type on the ZnO films properties was established.

Thermoelectric transport properties of BaBiTe{sub 3}-based materials

Energy Technology Data Exchange (ETDEWEB)

Zhou, Yiming; Zhao, Li-Dong, E-mail: zhaolidong@buaa.edu.cn

2017-05-15

BaBiTe{sub 3}, a material with low thermal conductivity, is an inferior thermoelectric material due to the poor electrical properties originated from its narrow band gap. We choose two types of dopants, K and La, trying to optimize its electrical transport properties. The minority carriers, which harm the Seebeck coefficient in this system, are suppressed by La doping. With the increase of both electrical conductivity and Seebeck coefficient, the power factor of 3% La doped BaBiTe{sub 3} reaches 3.7 μW cm{sup −1} K{sup −2} which increased by 40% from undoped BaBiTe{sub 3}. Besides high power factor, the thermal conductivity is also reduced in it. Eventually, a high ZT value, 0.25 at 473 K, for n-type BaBiTe{sub 3} is achieved in 3% La doped BaBiTe{sub 3}. - Graphical abstract: BaBiTe{sub 3} possesses a low thermal conductivity. However, it is an inferior thermoelectric material due to the poor electrical properties originated from its narrow band gap. A high ZT value of 0.25 at 473 K for n-type BaBiTe{sub 3} can be achieved through optimizing electrical transport properties via La doping. - Highlights: • BaBiTe{sub 3} is an analogue of these promising thermoelectric materials: such as CsBi{sub 4}Te{sub 6} and K{sub 2}Bi{sub 8}Se{sub 13}, etc. • BaBiTe{sub 3} possesses a low thermal conductivity. • La is an effective dopant to enhance electrical transport properties. • A high ZT value of 0.25 at 473 K can be achieved in n-type La-doped BaBiTe{sub 3}.

Thermoelectric anisotropy in the iron-based superconductor Ba (Fe1-xCox) 2As2

Science.gov (United States)

Matusiak, Marcin; Rogacki, Krzysztof; Wolf, Thomas

2018-06-01

We report on the in-plane anisotropy of the Seebeck and Nernst coefficients as well as of the electrical resistivity determined for a series of strain-detwinned single crystals of Ba (Fe1-xC ox) 2A s2 . Two underdoped samples (x =0.024 , 0.045) exhibiting a transition from the tetragonal paramagnetic phase to the orthorhombic spin density wave (SDW) phase (at Ttr=100 and 60 K, respectively) show an onset of Nernst anisotropy at temperatures above 200 K, which is significantly higher than Ttr. In the optimally doped sample (x =0.06 ) the transport properties also appear to be in-plane anisotropic below T ≈120 K, despite the fact that this particular composition does not show any evidence of long-range magnetic order. However, the anisotropy observed in the optimally doped crystal is rather small, and for the Seebeck and Nernst coefficients the difference between values measured along and across the uniaxial strain has an opposite sign to those observed for underdoped crystals with x =0.024 and 0.045. For these two samples, the insensitivity of the Nernst anisotropy to the SDW transition suggests that the origin of nematicity might be something other than magnetic.

Optimizing Thermoelectric Properties of In Situ Plasma-Spray-Synthesized Sub-stoichiometric TiO2-x Deposits

Science.gov (United States)

Lee, Hwasoo; Seshadri, Ramachandran Chidambaram; Pala, Zdenek; Sampath, Sanjay

2018-06-01

In this article, an attempt has been made to relate the thermoelectric properties of thermal spray deposits of sub-stoichiometric titania to process-induced phase and microstructural variances. The TiO2-x deposits were formed through the in situ reaction of the TiO1.9 or TiO1.7 feedstock within the high-temperature plasma flame and manipulated via varying the amounts of hydrogen fed into in the thermal plasma. Changes in the flow rates of H2 in the plasma plume greatly affected the in-flight particle behavior and composition of the deposits. For reference, a high-velocity oxy-fuel spray torch was also used to deposit the two varieties of feedstocks. Refinements to the representation of the in-flight particle characteristics derived via single particle and ensemble diagnostic methods are proposed using the group parameters (melting index and kinetic energy). The results show that depending on the value of the melting index, there is an inverse proportional relationship between electrical conductivity and Seebeck coefficient, whereas thermal conductivity has a directly proportional relationship with the electrical conductivity. Retention of the original phase and reduced decomposition is beneficial to retain the high Seebeck coefficient or the high electrical conductivity in the TiO2 system.

Investigation of electronic, magnetic and thermoelectric properties of Zr{sub 2}NiZ (Z = Al,Ga) ferromagnets

Energy Technology Data Exchange (ETDEWEB)

Yousuf, Saleem, E-mail: nengroosaleem17@gmail.com; Gupta, Dinesh C., E-mail: sosfizix@gmail.com

2017-05-01

Systematic investigation of impact of electronic structure and magnetism, on the thermoelectric properties of new Zr{sub 2}NiZ (Z = Al, Ga) Heusler alloys are determined using density functional theory calculations. Half-metallicity with ferromagnetic character is supported by their 100% spin polarizations at the Fermi level. Magnetic moment of ∼3 μ{sub B} is according to the Slater-Puling rule, enables their practical applications. Electron density plots are used to analyse the nature of bonding and chemical composition. Boltzmann's theory is conveniently employed to investigate the thermoelectric properties of these compounds. The analysis of the thermal transport properties specifies the Seebeck coefficient as 25.6 μV/K and 18.6 μV/K at room temperature for Zr{sub 2}NiAl and Zr{sub 2}NiGa, respectively. The half-metallic nature with efficient thermoelectric coefficients suggests the likelihood of these materials to have application in designing spintronic devices and imminent thermoelectric materials. - Highlights: • The compounds are half-metallic ferromagnets. • 100% spin-polarized compounds for spintronics. • Increasing Seebeck coefficient over a wide temperature range. • Zr{sub 2}NiAl is efficient thermoelectric material than Zr{sub 2}NiGa.

Frequency-domain Harman technique for rapid characterization of bulk and thin film thermoelectric materials

Science.gov (United States)

Moran, Samuel

Nanostructured thermoelectrics, often in the form of thin films, may potentially improve the generally poor efficiency of bulk thermoelectric power generators and coolers. In order to characterize the efficiency of these new materials it is necessary to measure their thermoelectric figure of merit, ZT. The only direct measurement of ZT is based on the Harman technique and relies on measuring the voltage drop across a sample subjected to a passing continuous current. Application of this technique to thin films is currently carried out as a time-domain measurement of the voltage as the thermal component decays after switching off an applied voltage. This work develops a technique for direct simultaneous measurement of figure of merit and Seebeck coefficient from the harmonic response of a thermoelectric material under alternating current excitation. A thermocouple mounted on the top surface measures voltage across the device as the frequency of the applied voltage is varied. A thermal model allows the sample thermal conductivity to also be determined and shows good agreement with measurements. This technique provides improved signal-to-noise ratio and accuracy compared to time-domain ZT measurements for comparable conditions while simultaneously measuring Seebeck coefficient. The technique is applied to both bulk and thin film thermoelectric samples.

Insight into electronic, mechanical and transport properties of quaternary CoVTiAl: Spin-polarized DFT + U approach

Energy Technology Data Exchange (ETDEWEB)

Yousuf, Saleem, E-mail: nengroosaleem17@gmail.com; Gupta, D.C., E-mail: sosfizix@gmail.com

2017-07-15

Highlights: • 100% spin-polarized material important for the application in spintronics. • It is ferromagnetic and ductile in nature. • Shows semiconducting behavior with a band gap of 1.06 eV. • Possibly efficient high temperature thermoelectric material. - Abstract: We present a preliminary investigation of band structure and thermoelectric properties of new quaternary CoVTiAl Heusler alloy. Structural, magnetic property and 100% spin polarization of equiatomic CoVTiAl predicts ferromagnetic stable ground state. Band profile outlines the indirect semiconducting behavior in spin down channel with band gap of 1.06 eV, and the magnetic moment of 3 µ{sub B} in accordance with Slater-Pauling rule. To evaluate the accuracy of different approximations in predicting thermoelectric properties, the comparison with available experimental data is made which shows fair agreement for the transport coefficients. The high temperature (800 K) positive Seebeck coefficient of 73.71 µV/K describes the p-type character of the material with high efficiency due to highly influential semiconducting behavior around the Fermi level. Considering the combination of 100% spin-polarization, high Seebeck coefficient and large figure of merit, ferromagnetic semiconducting CoVTiAl may prove as a potential candidate for high temperature thermoelectrics and an ideal spin source material for spintronic applications.

Thermoelectric properties of thin film and superlattice structure of IV-VI and V-VI compound semiconductors

International Nuclear Information System (INIS)

Blumers, Mathias

2012-01-01

The basic material property governing the efficiency of thermoelectric applications is the thermoelectric figure of merit Z=S 2 .σ/k, where S is the Seebeck-coefficient, σ is the electrical conductivity and k the thermal conductivity. A promising concept of increasing Z by one and two dimensional quantum well superlattices (QW-SL) was introduced in the early 1990s in terms of theoretical predictions. The realization of such low dimensional systems is done by use of semiconductor compounds with different energy gaps. The ambition of the Nitherma project was to investigate the thermoelectric properties of superlattices and Multi-Quantum-Well-structures (MQW) made of Pb 1-x Sr x Te and Bi 2 (Se x Te 1-x ) 3 , respectively. Therefore SL- and MQW-structures of this materials were grown and Z was determined by measuring of S, σ and κ parallel to the layer planes. Aim of this thesis is the interpretation of the transport measurements (S,σ,κ) of low dimensional structures and the improvement of preparation and measurement techniques. The influence of low dimensionality on the thermal conductivity in SL- and MQW-structures was investigated by measurements on structures with different layer thicknesses. In addition, measurements of the Seebeck-coefficient were performed, also to verify the results of the participating groups.

CaMn(1-x)Nb(x)O3 (x < or = 0.08) perovskite-type phases as promising new high-temperature n-type thermoelectric materials.

Science.gov (United States)

Bocher, L; Aguirre, M H; Logvinovich, D; Shkabko, A; Robert, R; Trottmann, M; Weidenkaff, A

2008-09-15

Perovskite-type CaMn(1-x)Nb(x)O(3+/-delta) (x = 0.02, 0.05, and 0.08) compounds were synthesized by applying both a "chimie douce" (SC) synthesis and a classical solid state reaction (SSR) method. The crystallographic parameters of the resulting phases were determined from X-ray, electron, and neutron diffraction data. The manganese oxidations states (Mn(4+)/Mn(3+)) were investigated by X-ray photoemission spectroscopy. The orthorhombic CaMn(1-x)Nb(x)O(3+/-delta) (x = 0.02, 0.05, and 0.08) phases were studied in terms of their high-temperature thermoelectric properties (Seebeck coefficient, electrical resistivity, and thermal conductivity). Differences in electrical transport and thermal properties can be correlated with different microstructures obtained by the two synthesis methods. In the high-temperature range, the electron-doped manganate phases exhibit large absolute Seebeck coefficient and low electrical resistivity values, resulting in a high power factor, PF (e.g., for x = 0.05, S(1000K) = -180 microV K(-1), rho(1000K) = 16.8 mohms cm, and PF > 1.90 x 10(-4) W m(-1) K(-2) for 450 K 0.3) make these phases the best perovskitic candidates as n-type polycrystalline thermoelectric materials operating in air at high temperatures.

Phosphorene nanoribbon as a promising candidate for thermoelectric applications

Science.gov (United States)

Zhang, J.; Liu, H. J.; Cheng, L.; Wei, J.; Liang, J. H.; Fan, D. D.; Shi, J.; Tang, X. F.; Zhang, Q. J.

2014-01-01

In this work, the electronic properties of phosphorene nanoribbons with different width and edge configurations are studied by using density functional theory. It is found that the armchair phosphorene nanoribbons are semiconducting while the zigzag nanoribbons are metallic. The band gaps of armchair nanoribbons decrease monotonically with increasing ribbon width. By passivating the edge phosphorus atoms with hydrogen, the zigzag series also become semiconducting, while the armchair series exhibit a larger band gap than their pristine counterpart. The electronic transport properties of these phosphorene nanoribbons are then investigated using Boltzmann theory and relaxation time approximation. We find that all the semiconducting nanoribbons exhibit very large values of Seebeck coefficient and can be further enhanced by hydrogen passivation at the edge. Taking pristine armchair nanoribbons and hydrogen-passivated zigzag naoribbons with width N = 7, 8, 9 as examples, we calculate the lattice thermal conductivity with the help of phonon Boltzmann transport equation and evaluate the width-dependent thermoelectric performance. Due to significantly enhanced Seebeck coefficient and decreased thermal conductivity, we find that at least one type of phosphorene nanoribbons can be optimized to exhibit very high figure of merit (ZT values) at room temperature, which suggests their appealing thermoelectric applications. PMID:25245326

Colligative thermoelectric transport properties in n-type filled CoSb{sub 3} determined by guest electrons in a host lattice

Energy Technology Data Exchange (ETDEWEB)

Lim, Young Soo, E-mail: yslim@pknu.ac.kr, E-mail: wsseo@kicet.re.kr, E-mail: pmoka@lgchem.com [Department of Materials System Engineering, Pukyong National University, Busan 48547 (Korea, Republic of); Park, Kwan-Ho; Tak, Jang Yeul; Lee, Soonil; Seo, Won-Seon, E-mail: yslim@pknu.ac.kr, E-mail: wsseo@kicet.re.kr, E-mail: pmoka@lgchem.com [Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology (KICET), Jinju 52851 (Korea, Republic of); Park, Cheol-Hee, E-mail: yslim@pknu.ac.kr, E-mail: wsseo@kicet.re.kr, E-mail: pmoka@lgchem.com; Kim, Tae Hoon; Park, PumSuk [LG Chem/Research Park, Daejeon 34122 (Korea, Republic of); Kim, Il-Ho [Department of Materials Science and Engineering, Korea National University of Transportation, Chungju 27909 (Korea, Republic of); Yang, Jihui [Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195 (United States)

2016-03-21

Among many kinds of thermoelectric materials, CoSb{sub 3} has received exceptional attention for automotive waste heat recovery. Its cage structure provides an ideal framework for the realization of phonon-glass electron-crystal strategy, and there have been numerous reports on the enhanced thermoelectric performance through the independent control of the thermal and electrical conductivity by introducing fillers into its cage sites. Herein, we report colligative thermoelectric transport properties in n-type CoSb{sub 3} from the viewpoint of “guest electrons in a host lattice.” Both the Seebeck coefficient and the charge transport properties are fundamentally determined by the concentration of the guest electrons, which are mostly donated by the fillers, in the conduction band of the host CoSb{sub 3}. Comparing this observation to our previous results, colligative relations for both the Seebeck coefficient and the mobility were deduced as functions of the carrier concentration, and thermoelectric transport constants were defined to predict the power factor in filled CoSb{sub 3}. This discovery not only increases the degree of freedom for choosing a filler but also provides the predictability of power factor in designing and engineering the n-type filled CoSb{sub 3} materials.

Nanoelectronics «bottom – up»: current generation, generalized Ohm’s law, elastic resistors, conductivity modes, thermoelectricity

Directory of Open Access Journals (Sweden)

Юрій Олексійович Кругляк

2015-07-01

Full Text Available General questions of electronic conductivity, current generation with the use of electrochemical potentials and Fermi functions, elastic resistor model, ballistic and diffusion transport, conductivity modes, n- and p-conductors and graphene, formulation of the generalized Ohm’s law, thermoelectric phenomena of Seebeck and Peltier, quality indicators and thermoelectric optimization, ballistic and diffusive phonon heat current are discussed in the frame of the «bottom – up» approach of modern nanoelectronics

Modeling and Experimentation of New Thermoelectric Cooler–Thermoelectric Generator Module

Directory of Open Access Journals (Sweden)

Khaled Teffah

2018-03-01

Full Text Available In this work, a modeling and experimental study of a new thermoelectric cooler–thermoelectric generator (TEC-TEG module is investigated. The studied module is composed of TEC, TEG and total system heatsink, all connected thermally in series. An input voltage (1–5 V passes through the TEC where the electrons by means of Peltier effect entrain the heat from the upper side of the module to the lower one creating temperature difference; TEG plays the role of a partial heatsink for the TEC by transferring this waste heat to the total system heatsink and converting an amount of this heat into electricity by a phenomenon called Seebeck effect, of the thermoelectric modules. The performance of the TEG as partial heatsink of TEC at different input voltages is demonstrated theoretically using the modeling software COMSOL Multiphysics. Moreover, the experiment validates the simulation result which smooths the path for a new manufacturing thermoelectric cascade model for the cooling and the immediate electric power generation.

Enhancement of thermoelectric figure-of-merit in laterally-coupled nanowire arrays

International Nuclear Information System (INIS)

Zhang, Yiqun; Shi, Yi; Pu, Lin; Wang, Junzhuan; Pan, Lijia; Zheng, Youdou

2011-01-01

A high ZT value is predicted in laterally-coupled nanowire arrays. The quantum confinement and coupling of electrons are considered in the framework of effective-mass envelope-function theory. The boundary scattering on phonons is also taken into account. The thermoelectric properties benefit from the large Seebeck coefficient and dramatically reduced lattice thermal conductivity, as well as the preserved electronic conductivity in the minibands of the coupling nanowires. The enhancement of ZT to more than 10-fold is achieved in the n-type Si nanowires/Ge host material. Results suggest that the laterally-coupled nanowire arrays can be designed for high-performance thermoelectric devices. -- Highlights: → A high ZT value is predicted in the lateral-coupling nanowire arrays. → The lattice thermal conductivity is dramatically reduced in the lateral direction of nanowire arrays. → The electron transport is preserved in the lateral direction due to the coupling effect. → The ZT value is largely enhanced as the nanowire volume fraction exceeds some critical point.

Lateral deflection of the SOL plasma during a giant ELM

International Nuclear Information System (INIS)

Landman, I.S.; Wuerz, H.

2001-01-01

In recent H-mode experiments at JET with giant ELMs a lateral deflection of hot tokamak plasma striking the divertor plate has been observed. This deflection can effect the divertor erosion caused by the hot plasma irradiation. Based on the MHD model for the vapor shield plasma and the hot plasma, the Seebeck effect is analyzed for explanation of the deflection. At t=-∞ both plasmas are at rest and separated by a boundary parallel to the target. The interaction between plasmas develops gradually ('adiabatically') as exp(t/t 0 ) with t 0 ∼10 2 μs the ELM duration time. At inclined impact of the magnetized hot plasma a toroidal current develops in the interaction zone of the plasmas. The JxB force accelerates the interacting plasmas in the lateral direction. The cold plasma motion essentially compensates the current. The magnitude of the hot plasma deflection is comparable to the observed one

Characteristic length scale of the magnon accumulation in Fe{sub 3}O{sub 4}/Pt bilayer structures by incoherent thermal excitation

Energy Technology Data Exchange (ETDEWEB)

Anadón, A., E-mail: anadonb@unizar.es; Lucas, I.; Morellón, L. [Instituto de Nanociencia de Aragón, Universidad de Zaragoza, E-50018 Zaragoza (Spain); Departamento de Física de la Materia Condensada, Universidad de Zaragoza, E-50009 Zaragoza (Spain); Ramos, R. [WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Spin Quantum Rectification Project, ERATO, Japan Science and Technology Agency, Sendai 980-8577 (Japan); Algarabel, P. A. [Departamento de Física de la Materia Condensada, Universidad de Zaragoza, E-50009 Zaragoza (Spain); Instituto de Ciencia de Materiales de Aragón, Universidad de Zaragoza and Consejo Superior de Investigaciones Científicas, 50009 Zaragoza (Spain); Ibarra, M. R.; Aguirre, M. H. [Instituto de Nanociencia de Aragón, Universidad de Zaragoza, E-50018 Zaragoza (Spain); Departamento de Física de la Materia Condensada, Universidad de Zaragoza, E-50009 Zaragoza (Spain); Laboratorio de Microscopías avanzadas, Universidad de Zaragoza, 50018 Zaragoza (Spain)

2016-07-04

The dependence of Spin Seebeck effect (SSE) with the thickness of the magnetic materials is studied by means of incoherent thermal excitation. The SSE voltage signal in Fe{sub 3}O{sub 4}/Pt bilayer structure increases with the magnetic material thickness up to 100 nm, approximately, showing signs of saturation for larger thickness. This dependence is well described in terms of a spin current pumped in the platinum film by the magnon accumulation in the magnetic material. The spin current is generated by a gradient of temperature in the system and detected by the Pt top contact by means of inverse spin Hall effect. Calculations in the frame of the linear response theory adjust with a high degree of accuracy the experimental data, giving a thermal length scale of the magnon accumulation (Λ) of 17 ± 3 nm at 300 K and Λ = 40 ± 10 nm at 70 K.

Applications of thermoelectric modules on heat flow detection.

Science.gov (United States)

Leephakpreeda, Thananchai

2012-03-01

This paper presents quantitative analysis and practical scenarios of implementation of the thermoelectric module for heat flow detection. Mathematical models of the thermoelectric effects are derived to describe the heat flow from/to the detected media. It is observed that the amount of the heat flow through the thermoelectric module proportionally induces the conduction heat owing to the temperature difference between the hot side and the cold side of the thermoelectric module. In turn, the Seebeck effect takes place in the thermoelectric module where the temperature difference is converted to the electric voltage. Hence, the heat flow from/to the detected media can be observed from both the amount and the polarity of the voltage across the thermoelectric module. Two experiments are demonstrated for viability of the proposed technique by the measurements of the heat flux through the building wall and thermal radiation from the outdoor environment during daytime. Copyright © 2011 ISA. Published by Elsevier Ltd. All rights reserved.

Isovalent substitutes play in different ways: Effects of isovalent substitution on the thermoelectric properties of CoSi{sub 0.98}B{sub 0.02}

Energy Technology Data Exchange (ETDEWEB)

Sun, Hui, E-mail: huisun3@iflytek.com [Department of Basic Teaching, Anhui Institute of Information Technology, Wuhu, Anhui 241000 (China); Lu, Xu [College of Physics, Chongqing University, Chongqing 401331 (China); Morelli, Donald T. [Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, Michigan 48824 (United States)

2016-07-21

Boron-added CoSi, CoSi{sub 0.98}B{sub 0.02}, possesses a very high thermoelectric power factor of 60 μW cm{sup −1} K{sup −2} at room temperature, which is among the highest power factors that have ever been reported for near-room-temperature thermoelectric applications. Since the electrical properties of this material have been tuned properly, isovalent substitution for its host atoms is intentionally employed to reduce the lattice thermal conductivity while maintaining the electronic properties unchanged. In our previous work, the effect of Rh substitution for Co atoms on the thermoelectric properties of CoSi{sub 0.98}B{sub 0.02} has been studied. Here, we present a study of the substitution of Ge for Si atoms in this compound. Even though Ge and Rh are isovalent with their corresponding host atoms, they play different roles in determining the electrical and thermal transport properties. Through the evaluation of the lattice thermal conductivity by the Debye approximation and the comparison between the high-temperature Seebeck coefficients, we propose that Rh substitution leads to a further overlapping of the conduction and the valence bands, while Ge substitution only shifts the Fermi level upward into the conduction band. Our results show that the influence of isovalent substitution on the electronic structure cannot be ignored when the alloying method is used to improve thermoelectric properties.

Effects of (Al,Ge) double doping on the thermoelectric properties of higher manganese silicides

Energy Technology Data Exchange (ETDEWEB)

Chen, Xi; Salta, Daniel; Zhang, Libin [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Weathers, Annie [Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Zhou, Jianshi; Goodenough, John B.; Shi, Li [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)

2013-11-07

Experiments and analysis have been carried out to investigate the effects of Al and (Al,Ge) doping on the microstructure and thermoelectric properties of polycrystalline higher manganese silicide (HMS) samples, which were prepared by solid-state reaction, ball milling, and followed by spark plasma sintering. It has been found that Al doping effectively increases the hole concentration, which leads to an increase in the electrical conductivity and power factor. By introducing the second dopant Ge into Al-doped HMS, the electrical conductivity is increased, and the Seebeck coefficient is decreased as a result of further increased hole concentration. The peak power factor is found to occur at a hole concentration between 1.8 × 10{sup 21} and 2.2 × 10{sup 21} cm{sup −3} measured at room temperature. The (Al,Ge)-doped HMS samples show lower power factors owing to their higher hole concentrations. The mobility of Mn(Al{sub 0.0035}Ge{sub y}Si{sub 0.9965-y}){sub 1.8} with y = 0.035 varies approximately as T{sup −3/2} above 200 K, suggesting acoustic phonon scattering is the dominant scattering mechanism. The thermal conductivity of HMS does not change appreciably by Al or (Al,Ge) doping. The maximum ZT of (Al,Ge)-doped HMS is 0.57 at 823 K, which is similar to the highest value found in the Al-doped HMS samples. The ZT values were reduced in the Mn(Al{sub 0.0035}Ge{sub y}Si{sub 0.9965-y}){sub 1.8} samples with high Ge concentration of y = 0.025 and 0.035, because of reduced power factor. In addition, a two-band model was employed to show that the hole contribution to the thermal conductivity dominates the bipolar and electron contributions for all samples from 300 to 823 K and accounts for about 12% of the total thermal conductivity at about 800 K.

Effects of (Al,Ge) double doping on the thermoelectric properties of higher manganese silicides

International Nuclear Information System (INIS)

Chen, Xi; Salta, Daniel; Zhang, Libin; Weathers, Annie; Zhou, Jianshi; Goodenough, John B.; Shi, Li

2013-01-01

Experiments and analysis have been carried out to investigate the effects of Al and (Al,Ge) doping on the microstructure and thermoelectric properties of polycrystalline higher manganese silicide (HMS) samples, which were prepared by solid-state reaction, ball milling, and followed by spark plasma sintering. It has been found that Al doping effectively increases the hole concentration, which leads to an increase in the electrical conductivity and power factor. By introducing the second dopant Ge into Al-doped HMS, the electrical conductivity is increased, and the Seebeck coefficient is decreased as a result of further increased hole concentration. The peak power factor is found to occur at a hole concentration between 1.8 × 10 21 and 2.2 × 10 21  cm −3 measured at room temperature. The (Al,Ge)-doped HMS samples show lower power factors owing to their higher hole concentrations. The mobility of Mn(Al 0.0035 Ge y Si 0.9965-y ) 1.8 with y = 0.035 varies approximately as T −3/2 above 200 K, suggesting acoustic phonon scattering is the dominant scattering mechanism. The thermal conductivity of HMS does not change appreciably by Al or (Al,Ge) doping. The maximum ZT of (Al,Ge)-doped HMS is 0.57 at 823 K, which is similar to the highest value found in the Al-doped HMS samples. The ZT values were reduced in the Mn(Al 0.0035 Ge y Si 0.9965-y ) 1.8 samples with high Ge concentration of y = 0.025 and 0.035, because of reduced power factor. In addition, a two-band model was employed to show that the hole contribution to the thermal conductivity dominates the bipolar and electron contributions for all samples from 300 to 823 K and accounts for about 12% of the total thermal conductivity at about 800 K

Calculation of Nonlinear Thermoelectric Coefficients of InAs1-xSbx Using Monte Carlo Method

Energy Technology Data Exchange (ETDEWEB)

Sadeghian, RB; Bahk, JH; Bian, ZX; Shakouri, A

2011-12-28

It was found that the nonlinear Peltier effect could take place and increase the cooling power density when a lightly doped thermoelectric material is under a large electrical field. This effect is due to the Seebeck coefficient enhancement from an electron distribution far from equilibrium. In the nonequilibrium transport regime, the solution of the Boltzmann transport equation in the relaxation-time approximation ceases to apply. The Monte Carlo method, on the other hand, proves to be a capable tool for simulation of semiconductor devices at small scales as well as thermoelectric effects with local nonequilibrium charge distribution. InAs1-xSb is a favorable thermoelectric material for nonlinear operation owing to its high mobility inherited from the binary compounds InSb and InAs. In this work we report simulation results on the nonlinear Peltier power of InAs1-xSb at low doping levels, at room temperature and at low temperatures. The thermoelectric power factor in nonlinear operation is compared with the maximum value that can be achieved with optimal doping in the linear transport regime.

Thermoelectric behavior of conducting polymers: On the possibility of off-diagonal thermoelectricity

Energy Technology Data Exchange (ETDEWEB)

Mateeva, N; Niculescu, H; Schlenoff, J; Testardi, L

1997-07-01

Non-cubic materials, when structurally aligned, possess sufficient anisotropy to exhibit thermoelectric effects where the electrical and thermal currents are orthogonal (off-diagonal thermoelectricity). The authors discuss the benefits of this form of thermoelectricity for devices and describe a search for suitable properties in the air-stable conducting polymers polyaniline and polypyrrole. They find the simple and general correlation that the logarithm of the electrical conductivity scales linearly with the Seebeck coefficient on doping but with proportionality in excess of the conventional prediction for thermoelectricity. The correlation is unexpected in its universality and unfavorable for thermoelectric applications. A simple model suggests that mobile charges of both signs exist in these polymers, and this leads to reduced thermoelectric efficiency. They also briefly discuss non air-stable polyacetylene, where ambipolar transport does not appear to occur, and where properties seem more favorable for thermoelectricity.

Optoelectronic and low temperature thermoelectric studies on nanostructured thin films of silver gallium selenide

Science.gov (United States)

Jacob, Rajani; Philip, Rachel Reena; Nazer, Sheeba; Abraham, Anitha; Nair, Sinitha B.; Pradeep, B.; Urmila, K. S.; Okram, G. S.

2014-01-01

Polycrystalline thin films of silver gallium selenide were deposited on ultrasonically cleaned soda lime glass substrates by multi-source vacuum co-evaporation technique. The structural analysis done by X-ray diffraction ascertained the formation of nano structured tetragonal chalcopyrite thin films. The compound formation was confirmed by X-ray photo-electron spectroscopy. Atomic force microscopic technique has been used for surface morphological analysis. Direct allowed band gap ˜1.78eV with high absorption coefficient ˜106/m was estimated from absorbance spectra. Low temperature thermoelectric effects has been investigated in the temperature range 80-330K which manifested an unusual increase in Seebeck coefficient with negligible phonon drag toward the very low and room temperature regime. The electrical resistivity of these n-type films was assessed to be ˜2.6Ωm and the films showed good photo response.

Thermoelectric properties of thin film and superlattice structure of IV-VI and V-VI compound semiconductors; Thermoelektrische Eigenschaften duenner Schichten und Uebergitterstrukturen von IV-VI- und V-VI-Verbundhalbleitern

Energy Technology Data Exchange (ETDEWEB)

Blumers, Mathias

2012-02-29

The basic material property governing the efficiency of thermoelectric applications is the thermoelectric figure of merit Z=S{sup 2}.{sigma}/k, where S is the Seebeck-coefficient, {sigma} is the electrical conductivity and k the thermal conductivity. A promising concept of increasing Z by one and two dimensional quantum well superlattices (QW-SL) was introduced in the early 1990s in terms of theoretical predictions. The realization of such low dimensional systems is done by use of semiconductor compounds with different energy gaps. The ambition of the Nitherma project was to investigate the thermoelectric properties of superlattices and Multi-Quantum-Well-structures (MQW) made of Pb{sub 1-x}Sr{sub x}Te and Bi{sub 2}(Se{sub x}Te{sub 1-x}){sub 3}, respectively. Therefore SL- and MQW-structures of this materials were grown and Z was determined by measuring of S, {sigma} and {kappa} parallel to the layer planes. Aim of this thesis is the interpretation of the transport measurements (S,{sigma},{kappa}) of low dimensional structures and the improvement of preparation and measurement techniques. The influence of low dimensionality on the thermal conductivity in SL- and MQW-structures was investigated by measurements on structures with different layer thicknesses. In addition, measurements of the Seebeck-coefficient were performed, also to verify the results of the participating groups.

High-performance thermoelectric materials based on ternary TiO2/CNT/PANI composites.

Science.gov (United States)

Erden, Fuat; Li, Hui; Wang, Xizu; Wang, FuKe; He, Chaobin

2018-04-04

In the present work, we report the fabrication of high-performance thermoelectric materials using TiO2/CNT/PANI ternary composites. We showed that a conductivity of ∼2730 S cm-1 can be achieved for the binary CNT (70%)/PANI (30%) composite, which is the highest recorded value for the reported CNT/PANI composites. We further demonstrated that the Seebeck coefficient of CNT/PANI composites could be enhanced by incorporating TiO2 nanoparticles into the binary CNT/PANI composites, which could be attributed to lower carrier density and the energy scattering of low-energy carriers at the interfaces of TiO2/a-CNT and TiO2/PANI. The resulting TiO2/a-CNT/PANI ternary system exhibits a higher Seebeck coefficient and enhanced thermoelectric power. Further optimization of the thermoelectric power was achieved by water treatment and by tuning the processing temperature. A high thermoelectric power factor of 114.5 μW mK-2 was obtained for the ternary composite of 30% TiO2/70% (a-CNT (70%)/PANI (30%)), which is the highest reported value among the reported PANI based ternary composites. The improvement of thermoelectric performance by incorporation of TiO2 suggests a promising approach to enhance power factor of organic thermoelectric materials by judicial tuning of the carrier concentration and electrical conductivity.

Prospects for Engineering Thermoelectric Properties in La1/3NbO3 Ceramics Revealed via Atomic-Level Characterization and Modeling.

Science.gov (United States)

Kepaptsoglou, Demie; Baran, Jakub D; Azough, Feridoon; Ekren, Dursun; Srivastava, Deepanshu; Molinari, Marco; Parker, Stephen C; Ramasse, Quentin M; Freer, Robert

2018-01-02

A combination of experimental and computational techniques has been employed to explore the crystal structure and thermoelectric properties of A-site-deficient perovskite La 1/3 NbO 3 ceramics. Crystallographic data from X-ray and electron diffraction confirmed that the room temperature structure is orthorhombic with Cmmm as a space group. Atomically resolved imaging and analysis showed that there are two distinct A sites: one is occupied with La and vacancies, and the second site is fully unoccupied. The diffuse superstructure reflections observed through diffraction techniques are shown to originate from La vacancy ordering. La 1/3 NbO 3 ceramics sintered in air showed promising high-temperature thermoelectric properties with a high Seebeck coefficient of S 1 = -650 to -700 μV/K and a low and temperature-stable thermal conductivity of k = 2-2.2 W/m·K in the temperature range of 300-1000 K. First-principles electronic structure calculations are used to link the temperature dependence of the Seebeck coefficient measured experimentally to the evolution of the density of states with temperature and indicate possible avenues for further optimization through electron doping and control of the A-site occupancies. Moreover, lattice thermal conductivity calculations give insights into the dependence of the thermal conductivity on specific crystallographic directions of the material, which could be exploited via nanostructuring to create high-efficiency compound thermoelectrics.

Thermoelectric properties of graphene nanosheets-modified polyaniline hybrid nanocomposites by an in situ chemical polymerization

International Nuclear Information System (INIS)

Lu, Yan; Song, Ying; Wang, Fuping

2013-01-01

A hybrid material of polyaniline protonated with hydrochloric acid and conductive graphene nanosheets (PANi/GNs) has been prepared by an in situ chemical polymerization method. The interactions between PANi and GNs in the hybrid composites are investigated by utilizing XRD, FT-IR, UV–vis and Raman. It is found that the PANi are adsorbed on the surface of the GNs, and the morphology of PANi transforms from twist structure to extended structure after the GNs are introduced. The thermoelectric (TE) properties of PANi/GNs composites have been investigated in the range from 323 K to 453 K. The electrical conductivity and the Seebeck coefficient of PANi/GNs composites are obviously higher than those of the PANi, while the thermal conductivity of the composites still keeps relatively low values even with high GNs content, resulting in the increase in dimensionless figure of merit (ZT). A highest ZT value of 1.95 × 10 −3 has been obtained for the composite containing 30 wt % GNs at 453 K, which is about 70 times higher than that obtained from the PANi. - Highlights: ► PANi adsorbed on the surface of the GNs possesses more extended structure. ► Electrical conductivity and Seebeck coefficient of PANi/GNs composites are superior to those of PANi. ► Thermal conductivity of the composites still keeps relatively low values

Ambient growth of highly oriented Cu{sub 2}S dendrites of superior thermoelectric behaviour

Energy Technology Data Exchange (ETDEWEB)

Mulla, Rafiq; Rabinal, M.K., E-mail: mkrabinal@yahoo.com

2017-03-01

Highlights: • A simple and ambient route to synthesize highly oriented dendrites of copper sulfide is proposed. • Remarkable enhancement is observed in Seebeck coefficient by room temperature, solution phase doping. • High thermoelectric power factor is observed at room temperature, indicating promising behaviour. - Abstract: Low-cost, non-toxic and efficient material is an urgent need for the thermoelectric energy conversion. Here, a rapid and ambient chemical route has been developed to grow dense and highly oriented dendrites of copper sulfide (Cu{sub 2}S) on copper substrate in a very simple approach, these films are uniform and covered with dense nanosheets. Room temperature solution doping of copper ions is carried out to improve thermoelectric performance. The Seebeck coefficient increased from ∼100 to 415 μV K{sup −1} with a slight decrease in electrical conductivity, this gives a high power factor (S{sup 2}σ) of about ∼400 μW m{sup −1} K{sup −2}. The improved thermoelectric properties in these films are accounted for resonant energy level doping and high phonon scattering. Such films with improved thermoelectric behaviour can be promising materials for energy conversion. The earth abundant, low cost, non toxic with a good thermoelectric property makes copper sulfide as a promising thermoelectric material for future applications.

Effects of Al content and annealing on the phases formation, lattice parameters, and magnetization of A lxF e2B2 (x =1.0 ,1.1 ,1.2 ) alloys

Science.gov (United States)

Levin, E. M.; Jensen, B. A.; Barua, R.; Lejeune, B.; Howard, A.; McCallum, R. W.; Kramer, M. J.; Lewis, L. H.

2018-03-01

AlF e2B2 is a ferromagnet with the Curie temperature around 300 K and has the potential to be an outstanding rare-earth free candidate for magnetocaloric applications. However, samples prepared from the melt contain additional phases which affect the functional response of the AlF e2B2 phase. We report on the effects of Al content in samples with the initial (nominal) composition of A lxF e2B2 , where x =1.0 , 1.1, and 1.2 prepared by arc-melting followed by suction casting and annealing. The as-cast A lxF e2B2 alloys contain AlF e2B2 as well as additional phases, including the primary solidifying FeB and A l13F e4 compounds, which are ferromagnetic and paramagnetic, respectively, at 300 K. The presence of these phases makes it difficult to extract the intrinsic magnetic properties of AlF e2B2 phase. Annealing of A lxF e2B2 alloys at 1040 °C for 3 days allows for reaction of the FeB with A l13F e4 to form the AlF e2B2 phase, significantly reduces the amount of additional phases, and results in nearly pure AlF e2B2 phase as confirmed with XRD, magnetization, scanning electron microscopy, and electronic transport. The values of the magnetization, effective magnetic moment per Fe atom, specific heat capacity, electrical resistivity, and Seebeck coefficient for the AlF e2B2 compound have been established.

Geo-thermo-electric power: geo-TEP materials; Geo-Thermopower. Geo-TEP Materials. Jahresbericht 2006

Energy Technology Data Exchange (ETDEWEB)

Bocher, L.; Weidenkaff, A.

2006-11-15

This illustrated annual report for 2006 for the Swiss Federal Office of Energy (SFOE) summarises activities carried out at the Swiss Federal Laboratories for Materials Testing and Research EMPA in the area of materials for use in thermo-electric power generation. Work carried out using Perovskite-type oxides exhibiting promising thermo-electric properties is described. The morphology and microstructure of polycrystalline particles are discussed as are the associated Seebeck coefficients. Further work to be carried out in 2007 is briefly reviewed.

Thermoelectric properties of non-stoichiometric lanthanum sulfides

International Nuclear Information System (INIS)

Shapiro, E.; Danielson, L.R.

1983-01-01

The lanthanum sulfides are promising candidate materials for high-efficiency thermoelectric applications at temperatures up to 1300 0 C. The nonstoichiometric lanthanum sulfides (LaS /SUB x/ , where 1.33 2 //rho/ can be chosen. The thermal conductivity remains approximately constant with stoichiometry, so a material with an optimum value of α 2 //rho/ should possess the optimum figure-of-merit. Data for the Seebeck coefficient and electrical resistivity of non-stoichiometric lanthanum sulfides is presented, together with structural properties of these materials

Base metal thermocouples drift rate dependence from thermoelement diameter

Science.gov (United States)

Pavlasek, P.; Duris, S.; Palencar, R.

2015-02-01

Temperature measurements are one of the key factors in many industrial applications that directly affect the quality, effectiveness and safety of manufacturing processes. In many industrial applications these temperature measurements are realized by thermocouples. Accuracy of thermocouples directly affects the quality of the final product of manufacturing and their durability determines the safety margins required. One of the significant effects that affect the precision of the thermocouples is short and long term stability of their voltage output. This stability issue occurs in every type of thermocouples and is caused by multiple factors. In general these factors affect the Seebeck coefficient which is a material constant, which determines the level of generated voltage when exposed to a temperature gradient. Changes of this constant result in the change of the thermocouples voltage output thus indicated temperature which can result in production quality issues, safety and health hazards. These alternations can be caused by physical and chemical changes within the thermocouple lead material. Modification of this material constant can be of temporary nature or permanent. This paper concentrates on the permanent, or irreversible changes of the Seebeck coefficient that occur in commonly used swaged MIMS Type N thermocouples. These permanent changes can be seen as systematic change of the EMF of the thermocouple when it is exposed to a high temperature over a period of time. This change of EMF by time is commonly known as the drift of the thermocouple. This work deals with the time instability of thermocouples EMF at temperatures above 1200 °C. Instability of the output voltage was taken into relation with the lead diameter of the tested thermocouples. This paper concentrates in detail on the change of voltage output of thermocouples of different diameters which were tested at high temperatures for the overall period of more than 210 hours. The gather data from this

Base metal thermocouples drift rate dependence from thermoelement diameter

International Nuclear Information System (INIS)

Pavlasek, P; Duris, S; Palencar, R

2015-01-01

Temperature measurements are one of the key factors in many industrial applications that directly affect the quality, effectiveness and safety of manufacturing processes. In many industrial applications these temperature measurements are realized by thermocouples. Accuracy of thermocouples directly affects the quality of the final product of manufacturing and their durability determines the safety margins required. One of the significant effects that affect the precision of the thermocouples is short and long term stability of their voltage output. This stability issue occurs in every type of thermocouples and is caused by multiple factors. In general these factors affect the Seebeck coefficient which is a material constant, which determines the level of generated voltage when exposed to a temperature gradient. Changes of this constant result in the change of the thermocouples voltage output thus indicated temperature which can result in production quality issues, safety and health hazards. These alternations can be caused by physical and chemical changes within the thermocouple lead material. Modification of this material constant can be of temporary nature or permanent. This paper concentrates on the permanent, or irreversible changes of the Seebeck coefficient that occur in commonly used swaged MIMS Type N thermocouples. These permanent changes can be seen as systematic change of the EMF of the thermocouple when it is exposed to a high temperature over a period of time. This change of EMF by time is commonly known as the drift of the thermocouple. This work deals with the time instability of thermocouples EMF at temperatures above 1200 °C. Instability of the output voltage was taken into relation with the lead diameter of the tested thermocouples. This paper concentrates in detail on the change of voltage output of thermocouples of different diameters which were tested at high temperatures for the overall period of more than 210 hours. The gather data from this

The effect of a distinct diameter variation on the thermoelectric properties of individual Bi0.39Te0.61 nanowires

International Nuclear Information System (INIS)

Kojda, D; Mitdank, R; Fischer, S F; Mogilatenko, A; Töllner, W; Nielsch, K; Wang, Z; Kröner, M; Woias, P

2014-01-01

The reduction of the thermal conductivity induced by nano-patterning is one of the major approaches for tailoring thermoelectric material properties. In particular, the role of surface roughness and morphology is under debate. Here, we choose two individual bismuth telluride nanowires (NWs), one with a strong diameter variation between 190 nm and 320 nm (NW1) and the other of 187 nm diameter with smooth sidewalls (NW2). Both serve as model systems for which bulk properties are expected if surface properties do not contribute. We investigate the role of the diameter variation by means of a combined full-thermoelectrical, structural and chemical characterization. By transmission electron microscopy the structure, chemical composition and morphology were determined after the thermoelectrical investigation. The NWs showed an oriented growth along the [110] direction and the same composition. The Seebeck coefficients of both NWs are comparable to each other. The electrical conductivity of both NWs exceeds the bulk value indicating the presence of a topological surface state. Whereas the thermal conductivity of NW2 compares to the bulk, the thermal conductivity of NW1 is about half of NW2 which is discussed with respect to its distinct diameter variation. (invited article)

Resonant scattering induced thermopower in one-dimensional disordered systems

Science.gov (United States)

Müller, Daniel; Smit, Wilbert J.; Sigrist, Manfred

2015-05-01

This study analyzes thermoelectric properties of a one-dimensional random conductor which shows localization effects and simultaneously includes resonant scatterers yielding sharp conductance resonances. These sharp features give rise to a distinct behavior of the Seebeck coefficient in finite systems and incorporate the degree of localization as a means to enhance thermoelectric performance, in principle. The model for noninteracting electrons is discussed within the Landauer-Büttiker formalism such that analytical treatment is possible for a wide range of properties, if a special averaging scheme is applied. The approximations in the averaging procedure are tested with numerical evaluations showing good qualitative agreement, with some limited quantitative disagreement. The validity of low-temperature Mott's formula is determined and a good approximation is developed for the intermediate temperature range. In both regimes the intricate interplay between Anderson localization due to disorder and conductance resonances of the disorder potential is analyzed.

Electronic structure, magnetic and transport properties of the Heusler shape memory alloy Mn{sub 2}NiGa

Energy Technology Data Exchange (ETDEWEB)

Blum, C.G.F. [Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg - University, Mainz (Germany); Institute of Solid State Research, IFW Dresden, D-01171 Dresden (Germany); Ouardi, S.; Fecher, G.H.; Balke, B.; Felser, C. [Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg - University, Mainz (Germany); Wurmehl, S.; Buechner, B. [Institute of Solid State Research, IFW Dresden, D-01171 Dresden (Germany); Ueda, S.; Kobayashi, K. [NIMS Beamline Station, National Institute for Materials Science, Hyogo 679-5148, Japan. (Germany)

2011-07-01

Magnetic shape memory based on Heusler compounds have received increasing interest, due their potential use for actuator and sensor applications. The single crystals Mn{sub 2}NiGa were grown by the optical floating zone method using a image furnace with vertical setup under a purified argon atmosphere. The both cubic (austenite) and tetragonal (martensite) phases of the sample were determined using temperature dependence powder x-ray diffraction XRD. The effect of martensitic transitions on the magnetic and transport properties of the compound was investigated by measuring the saturation magnetization, electrical resistivity {rho}(T), the Seebeck coefficient S(T) and magnetoresistance R{sub M}. All measurements detect clear signatures of the martensitic transition around room temperature with a thermal hysteresis up to 30 K. The electronic structures of the martensitic as well the austenitic phase were investigated using bulk-sensitive hard X-ray photoelectron spectroscopy (HAXPES).

Low-temperature thermoelectric power factor enhancement by controlling nanoparticle size distribution.

Science.gov (United States)

Zebarjadi, Mona; Esfarjani, Keivan; Bian, Zhixi; Shakouri, Ali

2011-01-12

Coherent potential approximation is used to study the effect of adding doped spherical nanoparticles inside a host matrix on the thermoelectric properties. This takes into account electron multiple scatterings that are important in samples with relatively high volume fraction of nanoparticles (>1%). We show that with large fraction of uniform small size nanoparticles (∼1 nm), the power factor can be enhanced significantly. The improvement could be large (up to 450% for GaAs) especially at low temperatures when the mobility is limited by impurity or nanoparticle scattering. The advantage of doping via embedded nanoparticles compared to the conventional shallow impurities is quantified. At the optimum thermoelectric power factor, the electrical conductivity of the nanoparticle-doped material is larger than that of impurity-doped one at the studied temperature range (50-500 K) whereas the Seebeck coefficient of the nanoparticle doped material is enhanced only at low temperatures (∼50 K).

Optoelectronic and low temperature thermoelectric studies on nanostructured thin films of silver gallium selenide

International Nuclear Information System (INIS)

Jacob, Rajani; Philip, Rachel Reena; Nazer, Sheeba; Abraham, Anitha; Nair, Sinitha B.; Pradeep, B.; Urmila, K. S.; Okram, G. S.

2014-01-01

Polycrystalline thin films of silver gallium selenide were deposited on ultrasonically cleaned soda lime glass substrates by multi-source vacuum co-evaporation technique. The structural analysis done by X-ray diffraction ascertained the formation of nano structured tetragonal chalcopyrite thin films. The compound formation was confirmed by X-ray photo-electron spectroscopy. Atomic force microscopic technique has been used for surface morphological analysis. Direct allowed band gap ∼1.78eV with high absorption coefficient ∼10 6 /m was estimated from absorbance spectra. Low temperature thermoelectric effects has been investigated in the temperature range 80–330K which manifested an unusual increase in Seebeck coefficient with negligible phonon drag toward the very low and room temperature regime. The electrical resistivity of these n-type films was assessed to be ∼2.6Ωm and the films showed good photo response

Using surfaces, ligands, and dimensionality to obtain desired nanostructure properties

Science.gov (United States)

Nagpal, Prashant; Singh, Vivek; Ding, Yuchen

2014-03-01

Nanostructured materials are intensively investigated to obtain material properties different from their bulk counterparts. It has been demonstrated that nanoscaled semiconductor can have interesting size, shape and morphology dependent optoelectronic properties. But the effect of surfaces, ligands and dimensionality (0D quantum dots to 2D nanosheets) has been largely unexplored. Here, we will show how tuning the surface and dimensionality can affect the electronic states of the semiconductor, and how these states can play an important role in their fundamental photophysical properties or thermal transport. Using the specific case for silicon, we will show how ``new'' surface states in small uniform can lead to light absorption/emission without phonon assistance, while hindering the phonon-drag of charge carriers leading to low Seebeck coefficient for thermoelectric applications. These measurements will shed light on designing appropriate surface, size, and dimensionality for desired applications of nanostructured films.

Magnon and phonon thermometry with inelastic light scattering

Science.gov (United States)

Olsson, Kevin S.; An, Kyongmo; Li, Xiaoqin

2018-04-01

Spin caloritronics investigates the interplay between the transport of spin and heat. In the spin Seebeck effect, a thermal gradient across a magnetic material generates a spin current. A temperature difference between the energy carriers of the spin and lattice subsystems, namely the magnons and phonons, is necessary for such thermal nonequilibrium generation of spin current. Inelastic light scattering is a powerful method that can resolve the individual temperatures of magnons and phonons. In this review, we discuss the thermometry capabilities of inelastic light scattering for measuring optical and acoustic phonons, as well as magnons. A scattering spectrum offers three temperature sensitive parameters: frequency shift, linewidth, and integrated intensity. We discuss the temperatures measured via each of these parameters for both phonon and magnons. Finally, we discuss inelastic light scattering experiments that have examined the magnon and phonon temperatures in thermal nonequilibrium which are particularly relevant to spin caloritronic phenomena.

Hybrid inorganic–organic superlattice structures with atomic layer deposition/molecular layer deposition

Energy Technology Data Exchange (ETDEWEB)

Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit, E-mail: maarit.karppinen@aalto.fi [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland)

2014-01-15

A combination of the atomic layer deposition (ALD) and molecular layer deposition (MLD) techniques is successfully employed to fabricate thin films incorporating superlattice structures that consist of single layers of organic molecules between thicker layers of ZnO. Diethyl zinc and water are used as precursors for the deposition of ZnO by ALD, while three different organic precursors are investigated for the MLD part: hydroquinone, 4-aminophenol and 4,4′-oxydianiline. The successful superlattice formation with all the organic precursors is verified through x-ray reflectivity studies. The effects of the interspersed organic layers/superlattice structure on the electrical and thermoelectric properties of ZnO are investigated through resistivity and Seebeck coefficient measurements at room temperature. The results suggest an increase in carrier concentration for small concentrations of organic layers, while higher concentrations seem to lead to rather large reductions in carrier concentration.

Effect of Ga2O3 Nanoparticles Dispersion on Microstructure and Thermoelectric Properties of p-Type BiSbTe Based Alloys

Directory of Open Access Journals (Sweden)

Kim E.-B.

2017-06-01

Full Text Available In this study, p-type Bi0.5Sb1.5Te3 based nanocomposites with addition of different weight percentages of Ga2O3 nanoparticles are fabricated by mechanical milling and spark plasma sintering. The fracture surfaces of all Bi0.5Sb1.5Te3 nanocomposites exhibited similar grain distribution on the entire fracture surface. The Vickers hardness is improved for the Bi0.5Sb1.5Te3 nanocomposites with 6 wt% added Ga2O3 due to exhibiting fine microstructure, and dispersion strengthening mechanism. The Seebeck coefficient of Bi0.5Sb1.5Te3 nanocomposites are significantly improved owing to the decrease in carrier concentration. The electrical conductivity is decreased rapidly upon the addition of Ga2O3 nanoparticle due to increasing carrier scattering at newly formed interfaces. The peak power factor of 3.24 W/mK2 is achieved for the base Bi0.5Sb1.5Te3 sintered bulk. The Bi0.5Sb1.5Te3 nanocomposites show low power factor than base sample due to low electrical conductivity.

First-principles study of thermoelectric properties of CuI

International Nuclear Information System (INIS)

Yadav, Manoj K; Sanyal, Biplab

2014-01-01

Theoretical investigations of the thermoelectric properties of CuI have been carried out employing first-principles calculations followed by the calculations of transport coefficients based on Boltzmann transport theory. Among the three different phases of CuI, viz. zinc-blende, wurtzite and rock salt, the thermoelectric power factor is found to be the maximum for the rock salt phase. We have analysed the variations of Seebeck coefficients and thermoelectric power factors on the basis of calculated electronic structures near the valence band maxima of these phases. (papers)

High Thermoelectric Figure of Merit by Resonant Dopant in Half-Heusler Alloys

OpenAIRE

Chen, Long; Liu, Yamei; He, Jian; Tritt, Terry M.; Poon, S. Joseph

2017-01-01

Half-Heusler alloys have been one of the benchmark high temperature thermoelectric materials owing to their thermal stability and promising figure of merit ZT. Simonson et al. early showed that small amounts of vanadium doped in Hf0.75Zr0.25NiSn enhanced the Seebeck coefficient and correlated the change with the increased density of states near the Fermi level. We herein report a systematic study on the role of vanadium (V), niobium (Nb), and tantalum (Ta) as prospective resonant dopants in e...

Estudio y optimización de los sistemas de intercambio de calor en generación termoeléctrica aplicada al aprovechamiento del calor residual

OpenAIRE

Aranguren Garacochea, Patricia

2015-01-01

La presente tesis doctoral estudia el aprovechamiento del calor residual mediante generación termoeléctrica para la obtención de potencia eléctrica generada gracias al efecto Seebeck. Dos son las aproximaciones empleadas, la simulación computacional, empleando variables obtenidas experimentalmente y la experimentación de escenarios reales. Ambas dos han obtenido valores muy prometedores para la generación eléctrica a través de los gases residuales. Con el desarrollo de esta tesis doctoral,...

Thermoelectric properties of M{sub 2}Mo{sub 6}Se{sub 6} (M =Tl,In)

Energy Technology Data Exchange (ETDEWEB)

Verebelyi, D T; Payne, J E; Tessema, G X; Mengistu, E

1997-07-01

The authors have measured the thermal conductivity of Tl{sub 2}Mo{sub 6}Se{sub 6}, a quasi-one dimensional conductor which belongs to the family of M{sub 2}Mo{sub 6}X{sub 6} linear chain compounds. Using these results and the measurements of the Seebeck coefficient and the electrical conductivity the authors estimate the dimensionless figure of merit to be of the order of 0.08. This result suggest that this compound and other related compounds are good potential TE.

Hall and thermoelectric evaluation of p-type InAs

Energy Technology Data Exchange (ETDEWEB)

Wagener, M.C., E-mail: magnus.wagener@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Wagener, V.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

2009-12-15

This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

Hall and thermoelectric evaluation of p-type InAs

International Nuclear Information System (INIS)

Wagener, M.C.; Wagener, V.; Botha, J.R.

2009-01-01

This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.

Potency of Thermoelectric Generator for Hybrid Vehicle

Directory of Open Access Journals (Sweden)

Nandy Putra

2010-10-01

Full Text Available Thermoelectric Generator (TEG has been known as electricity generation for many years. If the temperature difference occurred between two difference semi conductor materials, the current will flow in the material and produced difference voltage. This principle is known as Seebeck effect that is the opposite of Peltier effect Thermoelectric Cooling (TEC. This research was conducted to test the potential of electric source from twelve peltier modules. Then, these thermoelectric generators were applied in hybrid car by using waste heat from the combustion engine. The experiment has been conducted with variations of peltier module arrangements (series and parallels and heater as heat source for the thermoelectric generator, with variations of heater voltage input (110V and 220V applied. The experimental result showed that twelve of peltier modules arranged in series and heater voltage of 220V generated power output of 8.11 Watts with average temperature difference of 42.82°C. This result shows that TEG has a bright prospect as alternative electric source.

Enhancement of the power factor in two-phase silicon-boron nanocrystalline alloys

Energy Technology Data Exchange (ETDEWEB)

Narducci, Dario; Lorenzi, Bruno [Department of Materials Science, University of Milano Bicocca, Milan (Italy); Zianni, Xanthippe [Department of Aircraft Technologies, Technological Educational Institution of Sterea Ellada, Psachna (Greece); Department of Microelectronics, IAMPPNM, NCSR Demokritos, Athens (Greece); Neophytou, Neophytos [Institute for Microelectronics, TUV, Vienna (Austria); School of Engineering, University of Warwick, Coventry (United Kingdom); Frabboni, Stefano [Department of FIM, University of Modena and Reggio Emilia, Modena (Italy); CNR-Institute of Nanoscience-S3, Modena (Italy); Gazzadi, Gian Carlo [CNR-Institute of Nanoscience-S3, Modena (Italy); Roncaglia, Alberto; Suriano, Francesco [IMM-CNR, Bologna (Italy)

2014-06-15

In previous publications it was shown that the precipitation of silicon boride around grain boundaries may lead to an increase of the power factor in nanocrystalline silicon. Such an effect was further explained by computational analyses showing that the formation of an interphase at the grain boundaries along with high boron densities can actually lead to a concurrent increase of the electrical conductivity σ and of the Seebeck coefficient S. In this communication we report recent evidence of the key elements ruling such an unexpected effect. Nanocrystalline silicon films deposited onto a variety of substrates were doped to nominal boron densities in excess of 10{sup 20} cm{sup -3} and were annealed up to 1000 C to promote boride precipitation. Thermoelectric properties were measured and compared with their microstructure. A concurrent increase of σ and S with the carrier density was found only upon formation of an interphase. Its dependency on the film microstructure and on the deposition and processing conditions will be discussed. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Development of solar power generator system; Taiyoko netsufukugo hatsuden system no kaihatsu

Energy Technology Data Exchange (ETDEWEB)

Kisara, K; Kumagai, T; Niino, M; Chen, L; Eguchi, K [National Aerospace Laboratory, Tokyo (Japan)

1997-11-25

Described herein is a new hybrid solar power generator system, in which solar energy is separated into the light and heat components by a wavelength-selective filter before being directly converted into electric power, the former for the amorphous solar cell (ASC) unit and the latter for the thermoelectric unit. These units complement with each other to enhance overall efficiency. The ASC unit should have a higher efficiency when it works on the light component, because the heat (infrared) component increases cell temperature and decreases its output. For the ASC unit, the effects of the filter have been tested. The thermoelectric unit, generating power by the Seebeck effect, should have a higher efficiency, if heat flux passing through the unit can be increased, because of increased temperature differential, to which voltage produced increases proportionally. For the thermoelectric unit, heat is collected by a parabolic mirror unit from sunbeams received by a heliostat. Characteristics of these units are grasped almost as expected by the tests. 4 refs., 11 figs., 1 tab.

High-performance flat-panel solar thermoelectric generators with high thermal concentration

Science.gov (United States)

Kraemer, Daniel; Poudel, Bed; Feng, Hsien-Ping; Caylor, J. Christopher; Yu, Bo; Yan, Xiao; Ma, Yi; Wang, Xiaowei; Wang, Dezhi; Muto, Andrew; McEnaney, Kenneth; Chiesa, Matteo; Ren, Zhifeng; Chen, Gang

2011-07-01

The conversion of sunlight into electricity has been dominated by photovoltaic and solar thermal power generation. Photovoltaic cells are deployed widely, mostly as flat panels, whereas solar thermal electricity generation relying on optical concentrators and mechanical heat engines is only seen in large-scale power plants. Here we demonstrate a promising flat-panel solar thermal to electric power conversion technology based on the Seebeck effect and high thermal concentration, thus enabling wider applications. The developed solar thermoelectric generators (STEGs) achieved a peak efficiency of 4.6% under AM1.5G (1 kW m-2) conditions. The efficiency is 7-8 times higher than the previously reported best value for a flat-panel STEG, and is enabled by the use of high-performance nanostructured thermoelectric materials and spectrally-selective solar absorbers in an innovative design that exploits high thermal concentration in an evacuated environment. Our work opens up a promising new approach which has the potential to achieve cost-effective conversion of solar energy into electricity.

High-performance flat-panel solar thermoelectric generators with high thermal concentration.

Science.gov (United States)

Kraemer, Daniel; Poudel, Bed; Feng, Hsien-Ping; Caylor, J Christopher; Yu, Bo; Yan, Xiao; Ma, Yi; Wang, Xiaowei; Wang, Dezhi; Muto, Andrew; McEnaney, Kenneth; Chiesa, Matteo; Ren, Zhifeng; Chen, Gang

2011-05-01

The conversion of sunlight into electricity has been dominated by photovoltaic and solar thermal power generation. Photovoltaic cells are deployed widely, mostly as flat panels, whereas solar thermal electricity generation relying on optical concentrators and mechanical heat engines is only seen in large-scale power plants. Here we demonstrate a promising flat-panel solar thermal to electric power conversion technology based on the Seebeck effect and high thermal concentration, thus enabling wider applications. The developed solar thermoelectric generators (STEGs) achieved a peak efficiency of 4.6% under AM1.5G (1 kW m(-2)) conditions. The efficiency is 7-8 times higher than the previously reported best value for a flat-panel STEG, and is enabled by the use of high-performance nanostructured thermoelectric materials and spectrally-selective solar absorbers in an innovative design that exploits high thermal concentration in an evacuated environment. Our work opens up a promising new approach which has the potential to achieve cost-effective conversion of solar energy into electricity. © 2011 Macmillan Publishers Limited. All rights reserved

K{sub 1.33}Mn{sub 8}O{sub 16} as an electrocatalyst and a cathode

Energy Technology Data Exchange (ETDEWEB)

Jalili, Seifollah, E-mail: sjalili@kntu.ac.ir [Department of Chemistry, K. N. Toosi University of Technology, P.O. Box 15875-4416, Tehran (Iran, Islamic Republic of); Computational Physical Sciences Research Laboratory, School of Nano-Science, Institute for Research in Fundamental Sciences (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Moharramzadeh Goliaei, Elham [Department of Chemistry, K. N. Toosi University of Technology, P.O. Box 15875-4416, Tehran (Iran, Islamic Republic of); Schofield, Jeremy [Chemical Physics Theory Group, Department of Chemistry, University of Toronto, 80 Saint George Street, Toronto, Ontario, Canada M5S 3H6 (Canada)

2017-02-15

Density functional theory (DFT) calculations are carried out to investigate the electronic, magnetic and thermoelectric properties of bulk and nanosheet K{sub 1.33}Mn{sub 8}O{sub 16} materials. The catalytic activity and cathodic performance of bulk and nanosheet structures are examined using the Tran-Blaha modified Becke-Johnson (TB-mBJ) exchange potential. Electronic structure calculations reveal an anti-ferromagnetic ground state, with a TB-mMBJ band gap in bulk K{sub 1.33}Mn{sub 8}O{sub 16} that is in agreement with experimental results. Density of state plots indicate a partial reduction of Mn{sup 4+} ions to Mn{sup 3+}, without any obvious sign of Jahn-Teller distortion. Moreover, use of the O p-band center as a descriptor of catalytic activity suggests that the nanosheet has enhanced catalytic activity compared to the bulk structure. Thermoelectric parameters such as the Seebeck coefficient, electrical conductivity, and thermal conductivity are also calculated, and it is found that the Seebeck coefficients decrease with increasing temperature. High Seebeck coefficients for both spin-up and spin-down states are found in the nanosheet relative to their value in the bulk K{sub 1.33}Mn{sub 8}O{sub 16} structure, whereas the electrical and thermal conductivity are reduced relative to the bulk. In addition, figures of merit values are calculated as a function of the chemical potential and it is found that the nanosheet has a figure of merit of ~1 at room temperature, compared to 0.5 for the bulk material. All results suggest that K{sub 1.33}Mn{sub 8}O{sub 16} nanosheets can be used both as a material in waste heat recovery and as an electrocatalyst in fuel cells and batteries. - Graphical abstract: K{sub 1.33}Mn{sub 8}O{sub 16}: bulk and nanosheet. - Highlights: • Electronic properties of bulk and nanosheet forms of K{sub 1.33}Mn{sub 8}O{sub 16} have been studied. • The K{sub 1.33}Mn{sub 8}O{sub 16} nanosheet is a semiconductor while the bulk is a metal. • K

Enhanced thermoelectric properties of nano SiC dispersed Bi2Sr2Co2Oy Ceramics

Science.gov (United States)

Hu, Qiujun; Wang, Kunlun; Zhang, Yingjiu; Li, Xinjian; Song, Hongzhang

2018-04-01

The thermoelectric properties of Bi2Sr2Co2Oy + x wt% nano SiC (x = 0.00, 0.025, 0.05, 0.1, 0.2, and 0.3) prepared by the solid-state reaction method were investigated from 300 K to 923 K. The resistivity can be reduced effectively by adding a small amount of SiC nano particles, which is attributed to the increase of the carrier concentration. At the same time, the Seebeck coefficients can be improved effectively due to the energy filtering effect that low energy carriers are strongly dispersed at the interface between the SiC nano particles and the matrix. The decrease of thermal conductivity is due to the increase of the scattering ability of the phonons by the SiC nanoparticles distributed at the boundary of the matrix. As a result, the Bi2Sr2Co2Oy + x wt% SiC composites exhibit better thermoelectric properties. The maximum ZT value 0.24 is obtained when x = 0.05 at 923 K. Compared with the sample without SiC nano particles, the ZT value is increased by about 59.7%.

Transport and NMR characteristics of the skutterudite-related compound Ca3Rh4Sn13

Science.gov (United States)

Tseng, C. W.; Kuo, C. N.; Li, B. S.; Wang, L. M.; Gippius, A. A.; Kuo, Y. K.; Lue, C. S.

2018-02-01

We report the electronic properties of the Yb3Rh4Sn13-type single crystalline Ca3Rh4Sn13 by means of the electrical resistivity, Hall coefficient, Seebeck coefficient, thermal conductivity, as well as 119Sn nuclear magnetic resonance (NMR) measurements. The negative sign of the Hall coefficient and Seebeck coefficient at low temperatures suggests that the n-type carriers dominate the electrical transport in Ca3Rh4Sn13, in contrast to the observations in Sr3Rh4Sn13 which has a p-type conduction. Such a finding indicates a significant difference in the electronic features between these two stannides. Furthermore, we analyzed the temperature-dependent 119Sn NMR spin-lattice relaxation rate for Ca3Rh4Sn13, (Sr0.7Ca0.3)3Rh4Sn13, and Sr3Rh4Sn13 to examine the change of the electronic Fermi-level density of states (DOS) in (Sr1-xCax)3Rh4Sn13. It indicates that the Sn 5s partial Fermi-level DOS enhances with increasing the Ca content, being consistent with the trend of the superconducting temperature. Since the total Fermi-level DOS usually obeys the same trend of the partial Fermi-level DOS, the NMR analysis provides microscopic evidence for the correlation between the electronic DOS and superconductivity of the (Sr1-xCax)3Rh4Sn13 system.

The electrical, optical, structural and thermoelectrical characterization of n- and p-type cobalt-doped SnO2 transparent semiconducting films prepared by spray pyrolysis technique

International Nuclear Information System (INIS)

Bagheri-Mohagheghi, Mohammad-Mehdi; Shokooh-Saremi, Mehrdad

2010-01-01

The electrical, optical and structural properties of Cobalt (Co) doped SnO 2 transparent semiconducting thin films, deposited by the spray pyrolysis technique, have been studied. The SnO 2 :Co films, with different Co-content, were deposited on glass substrates using an aqueous-ethanol solution consisting of tin and cobalt chlorides. X-ray diffraction studies showed that the SnO 2 :Co films were polycrystalline only with tin oxide phases and preferential orientations along (1 1 0) and (2 1 1) planes and grain sizes in the range 19-82 nm. Optical transmittance spectra of the films showed high transparency ∼75-90% in the visible region, decreasing with increase in Co-doping. The optical absorption edge for undoped SnO 2 films was found to be 3.76 eV, while for higher Co-doped films shifted toward higher energies (shorter wavelengths) in the range 3.76-4.04 eV and then slowly decreased again to 4.03 eV. A change in sign of the Hall voltage and Seebeck coefficient was observed for a specific acceptor dopant level ∼11.4 at% in film and interpreted as a conversion from n-type to p-type conductivity. The thermoelectric electro-motive force (e.m.f.) of the films was measured in the temperature range 300-500 K and Seebeck coefficients were found in the range from -62 to +499 μVK -1 for various Co-doped SnO 2 films.

Influence of Oxygen Partial Pressure during Processing on the Thermoelectric Properties of Aerosol-Deposited CuFeO₂.

Science.gov (United States)

Stöcker, Thomas; Exner, Jörg; Schubert, Michael; Streibl, Maximilian; Moos, Ralf

2016-03-24

In the field of thermoelectric energy conversion, oxide materials show promising potential due to their good stability in oxidizing environments. Hence, the influence of oxygen partial pressure during synthesis on the thermoelectric properties of Cu-Delafossites at high temperatures was investigated in this study. For these purposes, CuFeO₂ powders were synthetized using a conventional mixed-oxide technique. X-ray diffraction (XRD) studies were conducted to determine the crystal structures of the delafossites associated with the oxygen content during the synthesis. Out of these powders, films with a thickness of about 25 µm were prepared by the relatively new aerosol-deposition (AD) coating technique. It is based on a room temperature impact consolidation process (RTIC) to deposit dense solid films of ceramic materials on various substrates without using a high-temperature step during the coating process. On these dense CuFeO₂ films deposited on alumina substrates with electrode structures, the Seebeck coefficient and the electrical conductivity were measured as a function of temperature and oxygen partial pressure. We compared the thermoelectric properties of both standard processed and aerosol deposited CuFeO₂ up to 900 °C and investigated the influence of oxygen partial pressure on the electrical conductivity, on the Seebeck coefficient and on the high temperature stability of CuFeO₂. These studies may not only help to improve the thermoelectric material in the high-temperature case, but may also serve as an initial basis to establish a defect chemical model.

Computational studies of novel thermoelectric materials

Energy Technology Data Exchange (ETDEWEB)

Singh, D J; Mazin, I I; Kim, S G; Nordstrom, L

1997-07-01

The thermoelectric properties of La-filled skutterdites and {beta}-Zn{sub 4}Sb{sub 3} are discussed from the point of view of their electronic structures. These are calculated from first principles within the local density approximation. The electronic structures are in turn used to determine transport related quantities, {beta}-Zn{sub 4}Sb{sub 3} is found to be metallic with a complex Fermi surface topology, which yields a non-trivial dependence of the Hall concentration on the band filling. Calculations of the variation with band filling are used to extract the carrier concentration from the experimental Hall number. At this band filling, which corresponds to 0.1 electrons per 22 atom unit cell, the authors calculate a Seebeck coefficient and temperature dependence in good agreement with the experimental value. The high Seebeck coefficients in a metallic material are remarkable, and arise because of the strong energy dependence of the Fermiology near the experimental band filling. Virtual crystal calculations for La(Fe,Co){sub 4}Sb{sub 12}. The valence band maximum occurs at the {Gamma} point and is due to a singly degenerate dispersive (Fe,Co)-Sb band, which by itself would not be favorable for TE. However, very flat transition metal derived bands occur in close proximity and become active as the doping level is increased, giving a non-trivial dependence of the properties on carrier concentration and explaining the favorable TE properties.

The electrical, optical, structural and thermoelectrical characterization of n- and p-type cobalt-doped SnO 2 transparent semiconducting films prepared by spray pyrolysis technique

Science.gov (United States)

Bagheri-Mohagheghi, Mohammad-Mehdi; Shokooh-Saremi, Mehrdad

2010-10-01

The electrical, optical and structural properties of Cobalt (Co) doped SnO 2 transparent semiconducting thin films, deposited by the spray pyrolysis technique, have been studied. The SnO 2:Co films, with different Co-content, were deposited on glass substrates using an aqueous-ethanol solution consisting of tin and cobalt chlorides. X-ray diffraction studies showed that the SnO 2:Co films were polycrystalline only with tin oxide phases and preferential orientations along (1 1 0) and (2 1 1) planes and grain sizes in the range 19-82 nm. Optical transmittance spectra of the films showed high transparency ∼75-90% in the visible region, decreasing with increase in Co-doping. The optical absorption edge for undoped SnO 2 films was found to be 3.76 eV, while for higher Co-doped films shifted toward higher energies (shorter wavelengths) in the range 3.76-4.04 eV and then slowly decreased again to 4.03 eV. A change in sign of the Hall voltage and Seebeck coefficient was observed for a specific acceptor dopant level ∼11.4 at% in film and interpreted as a conversion from n-type to p-type conductivity. The thermoelectric electro-motive force (e.m.f.) of the films was measured in the temperature range 300-500 K and Seebeck coefficients were found in the range from -62 to +499 μVK -1 for various Co-doped SnO 2 films.

Study for material analogs of FeSb2: Material design for thermoelectric materials

Science.gov (United States)

Kang, Chang-Jong; Kotliar, Gabriel

2018-03-01

Using the ab initio evolutionary algorithm (implemented in uspex) and electronic structure calculations we investigate the properties of a new thermoelectric material FeSbAs, which is a material analog of the enigmatic thermoelectric FeSb2. We utilize the density functional theory and the Gutzwiller method to check the energetics. We find that FeSbAs can be made thermodynamically stable above ˜30 GPa. We investigate the electronic structure and thermoelectric properties of FeSbAs based on the density functional theory and compare with those of FeSb2. Above 50 K, FeSbAs has higher Seebeck coefficients than FeSb2. Upon doping, the figure of merit becomes larger for FeSbAs than for FeSb2. Another material analog FeSbP, was also investigated, and found thermodynamically unstable even at very high pressure. Regarding FeSb2 as a member of a family of compounds (FeSb2, FeSbAs, and FeSbP) we elucidate what are the chemical handles that control the gaps in this series. We also investigate solubility (As or P for Sb in FeSb2) we found As to be more soluble. Finally, we study a two-band model for thermoelectric properties and find that the temperature dependent chemical potential and the presence of the ionized impurities are important to explain the extremum in the Seebeck coefficient exhibited in experiments for FeSb2.

Comment on "Optical Imaging of Light-Induced Thermopower in Semiconductors"

Science.gov (United States)

Apertet, Y.

2018-03-01

In a recent article [Phys. Rev. Applied 5, 024005 (2016), 10.1103/PhysRevApplied.5.024005], Gibelli and co-workers proposed a method to determine the thermopower, i.e., the Seebeck coefficient, using photoluminescence measurements. The photoluminescence spectra are used to obtain the local gradients of both the electrochemical potential difference between electron and holes and the temperature of the electron-hole plasma. However, the definition of the thermopower given in that article seems erroneous due to a confusion between the different physical quantities needed to derive this parameter.

Influence of nanosized inclusions on the room temperature thermoelectrical properties of a p-type bismuth–tellurium–antimony alloy

International Nuclear Information System (INIS)

Bernard-Granger, Guillaume; Addad, Ahmed; Navone, Christelle; Soulier, Mathieu; Simon, Julia; Szkutnik, Pierre-David

2012-01-01

Transmission electron microscopy observations and thermoelectrical property measurements (electrical conductivity, Seebeck coefficient and thermal conductivity) at room temperature have been completed on two fully dense polycrystalline p-type bismuth–tellurium–antimony alloy samples. It is shown that the presence of antimony oxide-based nanosized inclusions (controlled as to volume fraction and size distribution), homogeneously dispersed in the surrounding matrix leads to a dimensionless figure of merit (ZT) of ∼1.3 at room temperature. For comparison, when such inclusions are missing the ZT value is only 0.6.

Studies of tantalum nitride thin film resistors

International Nuclear Information System (INIS)

Langley, R.A.

1975-01-01

Backscattering of 2-MeV He ions was used to correlate the electrical properties of sputtered TaN/sub x/ thin-film resistors with their N content. The properties measured were sheet resistance, differential Seebeck potential (DSP), thermal coefficient of resistance (TCR), and stability. Resistivity and DSP are linearly dependent on N content for N/Ta ratios of 0.25 to 0.55. TCR decreases sharply below N/Ta = 0.35 and is relatively constant from 0.35 to 0.55. Stability is independent of N content. (DLC)

Thermoelectric performance of functionalized Sc2C MXenes

KAUST Repository

Kumar, S.; Schwingenschlö gl, Udo

2016-01-01

Functionalization of the MXene Sc2C, which has the rare property to realize semiconducting states for various functionalizations including O, F, and OH, is studied with respect to the electronic and thermal behavior. The lowest lattice thermal conductivity is obtained for OH functionalization and an additional 30% decrease can be achieved by confining the phonon mean free path to 100 nm. Despite a relatively low Seebeck coefficient, Sc2C(OH)2 is a candidate for intermediate-temperature thermoelectric applications due to compensation by a high electrical conductivity and very low lattice thermal conductivity.

Thermoelectric performance of functionalized Sc2C MXenes

KAUST Repository

Kumar, S.

2016-07-05

Functionalization of the MXene Sc2C, which has the rare property to realize semiconducting states for various functionalizations including O, F, and OH, is studied with respect to the electronic and thermal behavior. The lowest lattice thermal conductivity is obtained for OH functionalization and an additional 30% decrease can be achieved by confining the phonon mean free path to 100 nm. Despite a relatively low Seebeck coefficient, Sc2C(OH)2 is a candidate for intermediate-temperature thermoelectric applications due to compensation by a high electrical conductivity and very low lattice thermal conductivity.

A superconducting magnet: Tb2Mo3Si4

International Nuclear Information System (INIS)

Aliev, F.G.; Pryadun, V.V.; Vieira, S.; Villar, R.; Paredes, J.; Levanyuk, A.P.; Yarovets, V.I.

1994-01-01

Measurements of transport properties (resistivity, Seebeck coefficient, thermal conductivity), thermal expansion, heat capacity and magnetic susceptibility of Tb 2 Mo 3 Si 4 samples with different annealing conditions show that in this superconductor (with T c between 0.5 and 1.2 K) a complex magnetic structure exists in the normal state, characterized by transitions at 2.3 K and 19 K. The expected magnetic structures are discussed taking into account the absence of experimental evidence of spontaneous magnetization and the possibility of an antiferromagnetic-structure formation without change of translational geometry. (orig.)

In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

KAUST Repository

Sarath Kumar, S. R.

2013-11-07

We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.

The Peltier driven frequency domain approach in thermal analysis.

Science.gov (United States)

De Marchi, Andrea; Giaretto, Valter

2014-10-01

The merits of Frequency Domain analysis as a tool for thermal system characterization are discussed, and the complex thermal impedance approach is illustrated. Pure AC thermal flux generation with negligible DC component is possible with a Peltier device, differently from other existing methods in which a significant DC component is intrinsically attached to the generated AC flux. Such technique is named here Peltier Driven Frequency Domain (PDFD). As a necessary prerequisite, a novel one-dimensional analytical model for an asymmetrically loaded Peltier device is developed, which is general enough to be useful in most practical situations as a design tool for measurement systems and as a key for the interpretation of experimental results. Impedance analysis is possible with Peltier devices by the inbuilt Seebeck effect differential thermometer, and is used in the paper for an experimental validation of the analytical model. Suggestions are then given for possible applications of PDFD, including the determination of thermal properties of materials.

Proposal for a phase-coherent thermoelectric transistor

International Nuclear Information System (INIS)

Giazotto, F.; Robinson, J. W. A.; Moodera, J. S.; Bergeret, F. S.

2014-01-01

Identifying materials and devices which offer efficient thermoelectric effects at low temperature is a major obstacle for the development of thermal management strategies for low-temperature electronic systems. Superconductors cannot offer a solution since their near perfect electron-hole symmetry leads to a negligible thermoelectric response; however, here we demonstrate theoretically a superconducting thermoelectric transistor which offers unparalleled figures of merit of up to ∼45 and Seebeck coefficients as large as a few mV/K at sub-Kelvin temperatures. The device is also phase-tunable meaning its thermoelectric response for power generation can be precisely controlled with a small magnetic field. Our concept is based on a superconductor-normal metal-superconductor interferometer in which the normal metal weak-link is tunnel coupled to a ferromagnetic insulator and a Zeeman split superconductor. Upon application of an external magnetic flux, the interferometer enables phase-coherent manipulation of thermoelectric properties whilst offering efficiencies which approach the Carnot limit

Proposal for a phase-coherent thermoelectric transistor

Energy Technology Data Exchange (ETDEWEB)

Giazotto, F., E-mail: giazotto@sns.it [NEST, Instituto Nanoscienze-CNR and Scuola Normale Superiore, I-56127 Pisa (Italy); Robinson, J. W. A., E-mail: jjr33@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Moodera, J. S. [Department of Physics and Francis Bitter Magnet Lab, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Bergeret, F. S., E-mail: sebastian-bergeret@ehu.es [Centro de Física de Materiales (CFM-MPC), Centro Mixto CSIC-UPV/EHU, Manuel de Lardizabal 4, E-20018 San Sebastián (Spain); Donostia International Physics Center (DIPC), Manuel de Lardizabal 5, E-20018 San Sebastián (Spain)

2014-08-11

Identifying materials and devices which offer efficient thermoelectric effects at low temperature is a major obstacle for the development of thermal management strategies for low-temperature electronic systems. Superconductors cannot offer a solution since their near perfect electron-hole symmetry leads to a negligible thermoelectric response; however, here we demonstrate theoretically a superconducting thermoelectric transistor which offers unparalleled figures of merit of up to ∼45 and Seebeck coefficients as large as a few mV/K at sub-Kelvin temperatures. The device is also phase-tunable meaning its thermoelectric response for power generation can be precisely controlled with a small magnetic field. Our concept is based on a superconductor-normal metal-superconductor interferometer in which the normal metal weak-link is tunnel coupled to a ferromagnetic insulator and a Zeeman split superconductor. Upon application of an external magnetic flux, the interferometer enables phase-coherent manipulation of thermoelectric properties whilst offering efficiencies which approach the Carnot limit.

Thermopower in double planar tunnel junctions with ferromagnetic barriers and nonmagnetic electrodes

Energy Technology Data Exchange (ETDEWEB)

Wilczyński, M., E-mail: wilczyns@if.pw.edu.pl

2017-01-01

The Seebeck effect is investigated in double planar tunnel junctions consisting of nonmagnetic electrodes and the central layer separated by ferromagnetic barriers. Calculations are performed in the linear response theory using the free-electron model. The thermopower is analyzed as a function of the thickness of the central layer, temperature of the junctions and the relative orientation of magnetic moments of the barriers. It has been found that the thermopower can be significantly enhanced in the junction with special central layer thickness due to electron tunneling by resonant states. The thickness of the central layer for which the thermopower is enhanced depends not only on the temperature of the junction but also on the orientation of magnetic moments in the barriers. - Highlights: • Thermopower in the double planar junctions with magnetic barriers is analyzed. • Thermopower can be enhanced due to the resonant tunneling. • Thermopower depends on the magnetic configuration of the junction.

Feasibility study of Thermal Electric Generator Configurations as Renewable Energy Sources

Science.gov (United States)

Akmal Johar, Muhammad; Yahaya, Zulkarnain; Faizan Marwah, Omar Mohd; Jamaludin, Wan Akashah Wan; Najib Ribuan, Mohamed

2017-10-01

Thermoelectric Generator is a solid state device that able to convert thermal energy into electrical energy via temperature differences. The technology is based on Seebeck effect that was discovered in year 1821, however till now there is no real application to exploit this capability in mass scale. This research will report the performance analysis of TEG module in controlled environment of lab scale model. National Instrument equipment and Labview software has been choosen and developed to measure the TEG module in various configurations. Based on the experiment result, an additional passive cooling effort has produced a better ΔT by 7°C. The optimal electrical loading of single TEG is recorded at 200Ω. As for circuit connections, series connection has shown superior power output when compared to parallel connection or single TEG. A series connection of two TEGs has produced power output of 416.82μW when compared to other type connections that only produced around 100μW.

Thermoelectric System in Different Thermal and Electrical Configurations: Its Impact in the Figure of Merit

Directory of Open Access Journals (Sweden)

Alexander Vargas-Almeida

2013-05-01

Full Text Available In this work, we analyze different configurations of a thermoelectric system (TES composed of three thermoelectric generators (TEGs. We present the following considerations: (a TES thermally and electrically connected in series (SC; (b TES thermally and electrically connected in parallel (PSC; and (c parallel thermally and series electrical connection (SSC. We assume that the parameters of the TEGs are temperature-independent. The systems are characterized by three parameters, as it has been showed in recent investigations, namely, its internal electrical resistance, R, thermal conductance under open electrical circuit condition, K, and Seebeck coefficient α. We derive the equivalent parameters for each of the configurations considered here and calculate the Figure of Merit Z for the equivalent system. We show the impact of the configuration of the system on Z, and we suggest optimum configuration. In order to justify the effectiveness of the equivalent Figure of Merit, the corresponding efficiency has been calculated for each configuration.

Thermopower and magnetocaloric properties in NdSrMnO/CrO3 composites

Science.gov (United States)

Ahmed, A. M.; Mohamed, H. F.; Paixão, J. A.; Mohamed, Sara A.

2018-06-01

The thermoelectric power (TEP) and magnetocaloric effect (MCE) for (Nd0.6Sr0.4MnO3)1-x/(CrO3)x composites have been measured. The TEP measurements show a negative sign value of the Seebeck coefficient (S), in microvolts. TEP data construe in the low range of temperature by the magnon and phonon drag model, whereas at high temperature by small polaron conduction mechanism. Magnetic measurements exhibit that all composites show a paramagnetic-ferromagnetic transition with decreasing temperature. The Arrott plots of composites reveal the occurrence of a second order phase transition. The maximum value of magnetic entropy change (ΔS) is 2.37 J kg-1 K-1, achieved fore the composite with x = 0.015. Moreover, the maximum value of relative cooling power (RCP) is 122.1 J kg-1, achieved for the composite with x = 0.020. These composites may be appropriate for magnetic application near room temperature.

Low-Temperature Thermoelectric Properties of Fe2VAl with Partial Cobalt Doping

Science.gov (United States)

Liu, Chang; Morelli, Donald T.

2012-06-01

Ternary metallic alloy Fe2VAl with a pseudogap in its energy band structure has received intensive scrutiny for potential thermoelectric applications. Due to the sharp change in the density of states profile near the Fermi level, interesting transport properties can be triggered to render possible enhancement in the overall thermoelectric performance. Previously, this full-Heusler-type alloy was partially doped with cobalt at the iron sites to produce a series of compounds with n-type conductivity. Their thermoelectric properties in the temperature range of 300 K to 850 K were reported. In this research, efforts were made to extend the investigation on (Fe1- x Co x )2VAl to the low-temperature range. Alloy samples were prepared by arc-melting and annealing. Seebeck coefficient, electrical resistivity, and thermal conductivity measurements were performed from 80 K to room temperature. The effects of cobalt doping on the material's electronic and thermal properties are discussed.

Platinum/yttrium iron garnet inverted structures for spin current transport

Energy Technology Data Exchange (ETDEWEB)

Aldosary, Mohammed; Li, Junxue; Tang, Chi; Xu, Yadong; Shi, Jing [Department of Physics and Astronomy and SHINES Energy Frontier Research Center, University of California, Riverside, California 92521 (United States); Zheng, Jian-Guo [Irvine Materials Research Institute, University of California, Irvine, California 92697 (United States); Bozhilov, Krassimir N. [Central Facility for Advanced Microscopy and Microanalysis, University of California, Riverside, California 92521 (United States)

2016-06-13

30-80 nm thick yttrium iron garnet (YIG) films are grown by pulsed laser deposition on a 5 nm thick sputtered Pt atop gadolinium gallium garnet substrate (GGG) (110). Upon post-growth rapid thermal annealing, single crystal YIG(110) emerges as if it were epitaxially grown on GGG(110) despite the presence of the intermediate Pt film. The YIG surface shows atomic steps with the root-mean-square roughness of 0.12 nm on flat terraces. Both Pt/YIG and GGG/Pt interfaces are atomically sharp. The resulting YIG(110) films show clear in-plane uniaxial magnetic anisotropy with a well-defined easy axis along 〈001〉 and a peak-to-peak ferromagnetic resonance linewidth of 7.5 Oe at 9.32 GHz, similar to YIG epitaxially grown on GGG. Both spin Hall magnetoresistance and longitudinal spin Seebeck effects in the inverted bilayers indicate excellent Pt/YIG interface quality.

Molecular wires acting as quantum heat ratchets.

Science.gov (United States)

Zhan, Fei; Li, Nianbei; Kohler, Sigmund; Hänggi, Peter

2009-12-01

We explore heat transfer in molecular junctions between two leads in the absence of a finite net thermal bias. The application of an unbiased time-periodic temperature modulation of the leads entails a dynamical breaking of reflection symmetry, such that a directed heat current may emerge (ratchet effect). In particular, we consider two cases of adiabatically slow driving, namely, (i) periodic temperature modulation of only one lead and (ii) temperature modulation of both leads with an ac driving that contains a second harmonic, thus, generating harmonic mixing. Both scenarios yield sizable directed heat currents, which should be detectable with present techniques. Adding a static thermal bias allows one to compute the heat current-thermal load characteristics, which includes the ratchet effect of negative thermal bias with positive-valued heat flow against the thermal bias, up to the thermal stop load. The ratchet heat flow in turn generates also an electric current. An applied electric stop voltage, yielding effective zero electric current flow, then mimics a solely heat-ratchet-induced thermopower ("ratchet Seebeck effect"), although no net thermal bias is acting. Moreover, we find that the relative phase between the two harmonics in scenario (ii) enables steering the net heat current into a direction of choice.

Temperature-dependent transformation thermotics for unsteady states: Switchable concentrator for transient heat flow

Energy Technology Data Exchange (ETDEWEB)

Li, Ying, E-mail: 13110290008@fudan.edu.cn [Department of Mechanics and Engineering Science, Fudan University, Shanghai 200433 (China); Shen, Xiangying, E-mail: 13110190068@fudan.edu.cn [Department of Physics, State Key Laboratory of Surface Physics, and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433 (China); Huang, Jiping, E-mail: jphuang@fudan.edu.cn [Department of Physics, State Key Laboratory of Surface Physics, and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433 (China); Ni, Yushan, E-mail: niyushan@fudan.edu.cn [Department of Mechanics and Engineering Science, Fudan University, Shanghai 200433 (China)

2016-04-22

For manipulating heat flow efficiently, recently we established a theory of temperature-dependent transformation thermotics which holds for steady-state cases. Here, we develop the theory to unsteady-state cases by considering the generalized Fourier's law for transient thermal conduction. As a result, we are allowed to propose a new class of intelligent thermal metamaterial — switchable concentrator, which is made of inhomogeneous anisotropic materials. When environmental temperature is below or above a critical value, the concentrator is automatically switched on, namely, it helps to focus heat flux in a specific region. However, the focusing does not affect the distribution pattern of temperature outside the concentrator. We also perform finite-element simulations to confirm the switching effect according to the effective medium theory by assembling homogeneous isotropic materials, which bring more convenience for experimental fabrication than inhomogeneous anisotropic materials. This work may help to figure out new intelligent thermal devices, which provide more flexibility in controlling heat flow, and it may also be useful in other fields that are sensitive to temperature gradient, such as the Seebeck effect. - Highlights: • Established the unsteady-state temperature dependent transformation thermotics. • A thermal concentrator with switchable functionality. • An effective-medium design for experimental realization.

Thermoelectric and Transport Properties of N-Type Bi{sub 2−x}Sb{sub x}Te{sub 3−y}Se{sub y} Solid Solutions

Energy Technology Data Exchange (ETDEWEB)

Eum, A-Young; Kim, Il-Ho [Korea National University of Transportation, Chungju (Korea, Republic of)

2017-03-15

Bi{sub 2−x}Sb{sub x}Te{sub 3−y}Se{sub y} (x = 0.1, 0.2 and y = 0.15, 0.3) solid solutions were prepared using encapsulated melting and hot pressing. The lattice constants decreased with increases in the Sb and the Se contents, which revealed the successful formation of solid solutions. The relative densities of the hot-pressed specimens were 95 - 98%. All specimens exhibited n-type conduction at temperatures from 323 K to 523 K, and the electrical conductivity slightly decreased with increasing temperature. With an increase in the Se content, the Seebeck coefficient increased while the electrical and the thermal conductivities decreased; thus, the dimensionless figure of merit could be improved. The maximum dimensionless figure of merit ZT{sub max} = 0.89 was obtained at 423 K for Bi{sub 1.8}Sb{sub 0.2}Te{sub 2.7}Se{sub 0.3}. An increase in the Sb content resulted in a decrease in the lattice thermal conductivity because of an increase in alloy scattering, but its effect on the electrical properties was not superior to the effect of Se substitution. Therefore, Sb substitution could effectively control the thermal properties while Se substitution could effectively control the electrical properties.

The Effect of SbI3 Doping on the Structure and Electrical Properties of n-Type Bi1.8Sb0.2Te2.85Se0.15 Alloy Prepared by the Free Growth Method

Science.gov (United States)

Wang, Xiaoyu; Yu, Yuan; Zhu, Bin; Gao, Na; Huang, Zhongyue; Xiang, Bo; Zu, Fangqiu

2018-02-01

Thermoelectric technology is regarded as one of the most promising direct power generation techniques via thermoelectric materials. However, the batch production and scale-up application are hindered because of the high-cost and poor performance. In this work, we adopt the free growth method to synthesize a series of the bulk materials of SbI3-doped Bi1.8Sb0.2Te2.85Se0.15 alloys. The structural and component investigations as well as the electrical properties characterization are carried out. The results show that SbI3 promotes the formation of Te-rich regions in the matrix. In addition, the synergistically optimized electrical conductivity and Seebeck coefficient are attained by controlling the SbI3 doping concentration. Thus, the sample with 0.30 wt.% SbI3 displays a highly increased power factor of ˜ 13.57 μW cm-1 K-2, which is nearly 21 times higher than that of the undoped one. Moreover, the free growth method is reproducible, convenient and economical. Therefore, it has great potential as a promising technology for the batch synthesis.

Fiscal 2000 achievement report on research and development of industrial technologies. Research and development of synergy ceramics (Development of energy use rationalization technology); 2000 nendo sangyo kagaku gijutsu kenkyu kaihatsu seika hokokusho. Synergy ceramics no kenkyu kaihatsu (energy shiyo gorika gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

2001-03-01

Efforts are made to develop self-complete type purification ceramic materials in which selection, separation, and purification functions are merged with the energy conversion function. Activities are conducted in the three fields of developing (1) materials derivation technology, (2) application technology, and (3) common base technology. In relation to selection, separation, and purification functions in field (1), studies are made about electrochemical cell structure control and cell constituting materials for enabling a high efficiency NOx purification reaction. As for the energy conversion function, studies are made about the improvement of characteristics of oxide based thermoelectric conversion materials and about changes in electrical output due to their development into cells. In a study of novel thermoelectric conversion materials, K{sub 2}NiF{sub 4} type Y{sub 0.33}Sr{sub 1.67}(Ni{sub 1-y}Co{sub y})O{sub 4-{sigma}} and Ce{sub 0.25}Sr{sub 1.75}(Ni{sub 1-y}M{sub y})O{sub 4-{sigma}} (M=Fe, Co) are synthesized, and electrical resistivity levels and Seebeck coefficients are determined at room temperature-800 degrees C in an oxygen current. Seebeck coefficients are found to be negative for all specimens, which shows that they are n-type conductors. Ce{sub 0.25}Sr{sub 1.75}(Ni{sub 0.7}Fe{sub 0.8})O{sub 4-{sigma}} exhibits the greatest output factor of 0.064 times 10{sup -4}Wm{sup -1}K{sup -2} (400 degrees C). (NEDO)

Low Thermal Conductivity of RE-Doped SrO(SrTiO3)1 Ruddlesden Popper Phase Bulk Materials Prepared by Molten Salt Method

Science.gov (United States)

Putri, Yulia Eka; Said, Suhana Mohd; Refinel, Refinel; Ohtaki, Michitaka; Syukri, Syukri

2018-04-01

The SrO(SrTiO3)1 (Sr2TiO4) Ruddlesden Popper (RP) phase is a natural superlattice comprising of alternately stacking perovskite-type SrTiO3 layers and rock salt SrO layers along the crystallographic c direction. This paper discusses the properties of the Sr2TiO4 and (La, Sm)-doped Sr2TiO4 RP phase synthesized via molten salt method, within the context of thermoelectric applications. A good thermoelectric material requires high electrical conductivity, high Seebeck coefficient and low thermal conductivity. All three conditions have the potential to be fulfilled by the Sr2TiO4 RP phase, in particular, the superlattice structure allows a higher degree of phonon scattering hence resulting in lowered thermal conductivity. In this work, the Sr2TiO4 RP phase is doped with Sm and La respectively, which allows injection of charge carriers, modification of its electronic structure for improvement of the Seebeck coefficient, and most significantly, reduction of thermal conductivity. The particles with submicron size allows excessive phonon scattering along the boundaries, thus reduces the thermal conductivity by fourfold. In particular, the Sm-doped sample exhibited even lower lattice thermal conductivity, which is believed to be due to the mismatch in the ionic radius of Sr and Sm. This finding is useful as a strategy to reduce thermal conductivity of Sr2TiO4 RP phase materials as thermoelectric candidates, by employing dopants of differing ionic radius.

(Cu,C)Ba2Ca3Cu4Ox (LiF)y: addition of LiF—an effective way to synthesize overdoped superconductor

Science.gov (United States)

Badica, P.; Iyo, A.; Aldica, G.; Kito, H.; Crisan, A.; Tanaka, Y.

2004-03-01

(Cu,C)Ba2Ca3Cu4Ox superconductor with addition of y mol LiF has been synthesized by a high-pressure method. For the same synthesis conditions it was found that (almost) single-phase Cu, C-1234 samples can be synthesized for yLiF = 0-0.1 if the amount of z mol AgO oxidizer is increased linearly from zAgO = 0.45 to 0.73 and for yLiF = 0.1-0.2 if zAgO = 0.73 = constant. Transport measurements (rgr(T) and room-temperature Seebeck coefficient) have shown that these samples are overdoped: LiF is an effective addition for synthesis of overdoped Cu, C-1234 with a controlled level of carriers. LiF addition continuously decreases Tc. The critical point at yLiF = 0.1 is discussed as the solubility limit of LiF and/or the point where the doping mechanism changes. It is proposed that the reason is the reaction of extra Li with C and O to form Li2CO3, inducing a lower concentration of C in Cu, C-1234/LiF crystals, and at the same time a possible substitution of Li not only for the Cu site but also for the Ca site, resulting in formation of a higher amount of residual Ca0.828CuO2 (for yLiF>0.1). LiF induces the formation of a liquid phase and acts as a flux promoting the formation of Cu,C-12 (n-1)n with n \\ge 4 . LiF modifies to some degree the grain growth from a 3D to a 2D type (thinner platelike grains have been observed in the LiF added samples).

(Cu,C)Ba2Ca3Cu4Ox-(LiF)y: addition of LiF-an effective way to synthesize overdoped superconductor

International Nuclear Information System (INIS)

Badica, P; Iyo, A; Aldica, G; Kito, H; Crisan, A; Tanaka, Y

2004-01-01

(Cu,C)Ba 2 Ca 3 Cu 4 O x superconductor with addition of y mol LiF has been synthesized by a high-pressure method. For the same synthesis conditions it was found that (almost) single-phase Cu, C-1234 samples can be synthesized for y LiF = 0-0.1 if the amount of z mol AgO oxidizer is increased linearly from z AgO = 0.45 to 0.73 and for y LiF 0.1-0.2 if z AgO = 0.73 constant. Transport measurements (ρ(T) and room-temperature Seebeck coefficient) have shown that these samples are overdoped: LiF is an effective addition for synthesis of overdoped Cu, C-1234 with a controlled level of carriers. LiF addition continuously decreases T c . The critical point at y LiF = 0.1 is discussed as the solubility limit of LiF and/or the point where the doping mechanism changes. It is proposed that the reason is the reaction of extra Li with C and O to form Li 2 CO 3 , inducing a lower concentration of C in Cu, C-1234/LiF crystals, and at the same time a possible substitution of Li not only for the Cu site but also for the Ca site, resulting in formation of a higher amount of residual Ca 0.828 CuO 2 (for y LiF >0.1). LiF induces the formation of a liquid phase and acts as a flux promoting the formation of Cu,C-12 (n-1)n with n ≥ 4. LiF modifies to some degree the grain growth from a 3D to a 2D type (thinner platelike grains have been observed in the LiF added samples)

Experimental and theoretical investigation of Cr_1-xSc_xN solid solutions for thermoelectrics

DEFF Research Database (Denmark)

Kerdsongpanya, Sit; Sun, Bo; Eriksson, Fredrik

2016-01-01

The ScN- and CrN-based transition-metal nitrides have recently emerged as a novel and unexpected class of materials for thermoelectrics. These materials constitute well-defined model systems for investigating mixing thermodynamics, phase stability, and band structure aiming for property tailoring......-factor improvement by Sc3d orbital delocalization on Cr3d electrons giving decreasing electrical resistivity, while localized Cr3d orbitals with a large DOS slope may yield an improved Seebeck coefficient. Sc-rich solid solutions show a large improvement in power factor compared to pure ScN, and all films have power...

Structural and thermoelectric properties of the type-I Sn clathrates Cs8Sn46−n(n=0,2) from Density Functional Theory (DFT)

KAUST Repository

Egbele, Peter O.

2018-02-08

Sn clathrates are promising phonon glass, electron crystal materials (PGEC), in which the phonon free paths are short and the electron free paths are long. We analysed the relaxed structure of Sn clathrates using four different Density Funtional Exchange-Correlation functionals. The phonon structures were investigated as a first step in order to determine the phonon contribution to the thermal conductivity. We determined the Seebeck coefficient and electrical conductivity of the clathrate compound and the thermoelectric figure of merit. A glimpse into the dynamics of the system for the evaluation of the thermoelectric and electronic properties is presented.

Anomalous metallic state with strong charge fluctuations in BaxTi8O16 +δ revealed by hard x-ray photoemission spectroscopy

Science.gov (United States)

Dash, S.; Kajita, T.; Okawa, M.; Saitoh, T.; Ikenaga, E.; Saini, N. L.; Katsufuji, T.; Mizokawa, T.

2018-04-01

We have studied a charge-orbital driven metal-insulator transition (MIT) in hollandite-type BaxTi8O16 +δ by means of hard x-ray photoemission spectroscopy (HAXPES). The Ti 2 p HAXPES indicates strong Ti3 +/Ti4 + charge fluctuation in the metallic phase above the MIT temperature. The metallic phase is characterized by a power-law spectral function near the Fermi level which would be a signature of bad metal with non-Drude polaronic behavior. The power-law spectral shape is associated with the large Seebeck coefficient of the metallic phase in BaxTi8O16 +δ .

Magnetothermoelectric figure of merit of Co/Cu multilayers

Energy Technology Data Exchange (ETDEWEB)

Hu, X. K., E-mail: xiukun.hu@ptb.de; Krzysteczko, P.; Liebing, N.; Schumacher, H. W. [Physikalisch-Technische Bundesanstalt, Bundesallee 100, D-38116 Braunschweig (Germany); Serrano-Guisan, S. [International Iberian Nanotechnology Laboratory, Av. Mestre José Veiga, 4715-330 Braga (Portugal); Rott, K.; Reiss, G. [Fakultät für Physik, Universität Bielefeld, Postfach 100131, D-33501 Bielefeld (Germany); Kimling, J.; Böhnert, T.; Nielsch, K. [Institut für Angewandte Physik, Universität Hamburg, Jungiusstraße 11, D-20355 Hamburg (Germany)

2014-03-03

The switching of the magnetic configuration of giant magnetoresistance multilayers not only changes the electrical and thermal conductivities but also the thermopower. We study the magnetotransport and the magnetothermoelectric properties of Co/Cu multilayer devices in a lateral thermal gradient. The Seebeck coefficient reaches values up to −18 μV/K at room temperature and shows a magnetic field dependence up to 28.6% upon spin reversal. In combination with thermal conductivity data of the same Co/Cu stack, we find a magnetothermoelectric figure of merit of up to 65%. Furthermore, a magneto-power factor of up to 110% is derived.

Investigation of thermoelectricity in KScSn half-Heusler compound

Science.gov (United States)

Shrivastava, Deepika; Acharya, Nikita; Sanyal, Sankar P.

2018-05-01

The electronic and transport properties of KScSn half-Heusler (HH) compound have been investigated using first-principles density functional theory and semi classical Boltzmann transport theory. The electronic band structure and density of states (total and partial) show semiconducting nature of KScSn with band gap 0.48 eV which agree well with previously reported results. The transport coefficient such as electrical conductivity, Seebeck coefficient, electronic thermal conductivity and power factor as a function of chemical potential are evaluated. KScSn has high power factor for p-type doping and is a potential candidate for thermoelectric applications.

Thermoelectric properties of Bi2Te3-Bi2Se3 solid solutions prepared by attrition milling and hot pressing

International Nuclear Information System (INIS)

Lee, Go-Eun; Kim, Il-Ho; Choi, Soon-Mok; Lim, Young-Soo; Seo, Won-Seon; Park, Jae-Soung; Yang, Seung-Ho

2014-01-01

Bi 2 Te 3-y Se y (y = 0.15 - 0.6) solid solutions were prepared by attrition milling and hot pressing. The lattice constants decreased with increasing Se content, indicating that the Se atoms were successfully substituted into the Te sites. All specimens exhibited n-type conduction, and their electrical resistivities increased slightly with increasing temperature. With increasing Se content, the Seebeck coefficients increased while the thermal conductivity decreased due to the increase in phonon scattering. The maximum figure of merit obtained was 0.63 at 440 K for the undoped Bi 2 Te 2.4 Se 0.6 solid solution.

Rapid characterization of thermoelectric properties of composition spread (La1-xCax)VO3 films

International Nuclear Information System (INIS)

Itaka, K.; Wang, Q.J.; Minami, H.; Kawaji, H.; Koinuma, H.

2004-01-01

Vanadium oxides possess various interesting properties due to multivalence of a vanadium atom and attract our interest as a target material for the exploration of new applications. We investigated vanadates (La 1-x Ca x )VO 3 with a perovskite structure as thermoelectric (TE) materials because heavy electrons in vanadates are expected to generate large thermopower. To proceed the investigation of thermoelectric properties of the composition spread library more efficiently, we devised a new instrument of multi-channel measurement of their thermoelectric properties. The polarity of Seebeck coefficients changed from positive (0≤x≤0.2) to negative (0.2 3 (x∼0)

Thermal energy harvesting for application at MEMS scale

CERN Document Server

Percy, Steven; McGarry, Scott; Post, Alex; Moore, Tim; Cavanagh, Kate

2014-01-01

This book discusses the history of thermal heat generators and focuses on the potential for these processes using micro-electrical mechanical systems (MEMS) technology for this application. The main focus is on the capture of waste thermal energy for example from industrial processes, transport systems or the human body to generate useable electrical power.  A wide range of technologies is discussed, including external combustion heat cycles at MEMS ( Brayton, Stirling and Rankine), Thermoacoustic, Shape Memory Alloys (SMAs), Multiferroics, Thermionics, Pyroelectric, Seebeck, Alkali Metal Thermal, Hydride Heat Engine, Johnson Thermo Electrochemical Converters, and the Johnson Electric Heat Pipe.

Strain-induced enhancement of thermoelectric performance of TiS2 monolayer based on first-principles phonon and electron band structures

Science.gov (United States)

Li, Guanpeng; Yao, Kailun; Gao, Guoying

2018-01-01

Using first-principle calculations combined with Boltzmann transport theory, we investigate the biaxial strain effect on the electronic and phonon thermal transport properties of a 1 T (CdI2-type) structural TiS2 monolayer, a recent experimental two-dimensional (2D) material. It is found that the electronic band structure can be effectively modulated and that the band gap experiences an indirect-direct-indirect transition with increasing tensile strain. The band convergence induced by the tensile strain increases the Seebeck coefficient and the power factor, while the lattice thermal conductivity is decreased under the tensile strain due to the decreasing group velocity and the increasing scattering chances between the acoustic phonon modes and the optical phonon modes, which together greatly increase the thermoelectric performance. The figure of merit can reach 0.95 (0.82) at an 8 percent tensile strain for the p-type (n-type) doping, which is much larger than that without strain. The present work suggests that the TiS2 monolayer is a good candidate for 2D thermoelectric materials, and that biaxial strain is a powerful tool with which to enhance thermoelectric performance.

Synthesis, characterization and thermoelectric properties of metal borides, boron carbides and carbaborides; Synthese, Charakterisierung und thermoelektrische Eigenschaften ausgewaehlter Metallboride, Borcarbide und Carbaboride

Energy Technology Data Exchange (ETDEWEB)

Guersoy, Murat

2015-07-06

This work reports on the solid state synthesis and structural and thermoelectrical characterization of hexaborides (CaB{sub 6}, SrB{sub 6}, BaB{sub 6}, EuB{sub 6}), diboride dicarbides (CeB{sub 2}C{sub 2}, LaB{sub 2}C{sub 2}), a carbaboride (NaB{sub 5}C) and composites of boron carbide. The characterization was performed by X-ray diffraction methods and Rietveld refinements based on structure models from literature. Most of the compounds were densified by spark plasma sintering at 100 MPa. As high-temperature thermoelectric properties the Seebeck coefficients, electrical conductivities, thermal diffusivities and heat capacities were measured between room temperature and 1073 K. ZT values as high as 0.5 at 1273 K were obtained for n-type conducting EuB{sub 6}. High-temperature X-ray diffraction also confirmed its thermal stability. The solid solutions Ca{sub x}Sr{sub 1-x}B{sub 6}, Ca{sub x}Ba{sub 1-x}B{sub 6} and Sr{sub x}Ba{sub 1-x}B{sub 6} (x = 0, 0.25, 0.5, 0.75, 1) are also n-type but did not show better ZT values for the ternary compounds compared to the binaries, but for CaB{sub 6} the values of the figure of merit (ca. 0.3 at 1073 K) were significantly increased (ca. 50 %) compared to earlier investigations which is attributed to the densification process. Sodium carbaboride, NaB{sub 5}C, was found to be the first p-type thermoelectric material that crystallizes with the hexaboride-structure type. Seebeck coefficients of ca. 80 μV . K{sup -1} were obtained. Cerium diboride dicarbide, CeB{sub 2}C{sub 2}, and lanthanum diboride dicarbide, LaB{sub 2}C{sub 2}, are metallic. Both compounds were used as model compounds to develop compacting strategies for such layered borides. Densities obtained at 50 MPa were determined to be higher than 90 %. A new synthesis route using single source precursors that contain boron and carbon was developed to open the access to new metal-doped boron carbides. It was possible to obtain boron carbide, but metal-doping could not be

Thermoelectric and thermospintronic transport in Dirac material-based nanostructures

Science.gov (United States)

Chang, Po-Hao

The growing need for power due to the rapid developments of the technologies has urged both engineers and scientists to study more sustainable types of energy. On the other hand, the improvement of our abilities although enable us, for example, to double the number of transistors in a dense integrated circuit approximately every two years (Moore's law), comes with side effect due to overheating. Taking advantage of thermoelectric effect has thus become one of the obvious solutions for the problems. But due to the poor efficiency of electricity-heat conversion, there are still challenges to be overcome in order to fully utilize the idea. In the past few years, the realization of graphene along with the discoveries of topological insulators (TI) which are both considered as Dirac material (DM) have offer alternative routs for improving the energy conversion efficiency through different approaches as well as novel quantum effects of materials themselves for investigation. The aim of this thesis is to present contributions to improving the efficiency of thermoelectric conversion as well as analyzing spin transport phenomena that occur in nano-devices. This thesis spans the areas of thermoelectric (TE) effect, spin-Seebeck effect (SSE) and the spin transport on the 3D topological insulator (TI). The different methods have been applied ranging from tight-binding (TB) approximation to density function theory (DFT) combined with non-equilibrium function (NEGF) techniques.

Study on thermal electric conversion system for FBR plant. Investigation for effective EVST waste heat recovery system

International Nuclear Information System (INIS)

Maekawa, Isamu; Kurata, Chikatoshi

2004-02-01

Recently, it has been important to reuse discharged heat energy from present nuclear plant, especially from sodium cooled FBR, which are typical high temperature system, in the view of reduction of environmental burden and improvement of heat efficiency for plant. The thermal electric conversion system can work only the temperature difference and has been applied to the limited fields such as space or military, however, that results show good merits for reliability, maintenance free, and so on. Recently, the development of new thermal electric conversion elements has made remarkable progress. In this study, for the effective utilization of waste heat from Monju', the prototype plant of FBR, we made an investigation of electric power generating system maintaining the cooling faculty by applying the thermal electric conversion system to sodium cooling line of EVST. Using the new type iron based thermal electric conversion elements, which are plentiful, economical and good for environmental harmonization, we have calculated the amount of heat exchange and power generation from sodium cooling line of EVST, and have investigated the module sizing, cost and subject to be settled. The results were , (1)The amount of power generation from sodium cooling line of EVST is smaller about one figure than motive power of sodium cooler fan. However, if Seebeck coefficient and heat conductivity of iron based thermal electric conversion elements shall be improved, power from sodium cooling line shall be able to cover the motive power. (2) The amount of heat released from sodium cooling line after the installation of thermal electric conversion module covers the necessity to maintain the sodium cooling faculty. (3) In case of the installation of module to the sodium cooler, it should be reconstructed because of tube arrangement modification. In case of the installation of module to the sodium connecting line, air ventilation system is needed to suppress the room temperature. (4) As

Semiconductor Nanowires and Nanotubes for Energy Conversion

Science.gov (United States)

Fardy, Melissa Anne

In recent years semiconductor nanowires and nanotubes have garnered increased attention for their unique properties. With their nanoscale dimensions comes high surface area and quantum confinement, promising enhancements in a wide range of applications. 1-dimensional nanostructures are especially attractive for energy conversion applications where photons, phonons, and electrons come into play. Since the bohr exciton radius and phonon and electron mean free paths are on the same length scales as nanowire diameters, optical, thermal, and electrical properties can be tuned by simple nanowire size adjustments. In addition, the high surface area inherent to nanowires and nanotubes lends them towards efficient charge separation and superior catalytic performance. In thermoelectric power generation, the nanoscale wire diameter can effectively scatter phonons, promoting reductions in thermal conductivity and enhancements in the thermoelectric figure of merit. To that end, single-crystalline arrays of PbS, PbSe, and PbTe nanowires have been synthesized by a chemical vapor transport approach. The electrical and thermal transport properties of the nanowires were characterized to investigate their potential as thermoelectric materials. Compared to bulk, the lead chalcogenide nanowires exhibit reduced thermal conductivity below 100 K by up to 3 orders of magnitude, suggesting that they may be promising thermoelectric materials. Smaller diameters and increased surface roughness are expected to give additional enhancements. The solution-phase synthesis of PbSe nanowires via oriented attachment of nanoparticles enables facile surface engineering and diameter control. Branched PbSe nanowires synthesized by this approach showed near degenerately doped charge carrier concentrations. Compared to the bulk, the PbSe nanowires exhibited a similar Seebeck coefficient and a significant reduction in thermal conductivity in the temperature range 20 K to 300 K. Thermal annealing of the Pb

Mechanochemically assisted solid-state and citric acid complex syntheses of Cu-doped sodium cobaltite ceramics

International Nuclear Information System (INIS)

Pršić, S.; Savić, S.M.; Branković, Z.; Vrtnik, S.; Dapčević, A.; Branković, G.

2015-01-01

Highlights: • Sodium cobaltite was synthesized by mechanochemically assisted solid-state reaction and citric acid complex (CAC) method. • We investigated effect of Cu-doping in NaCo 2−x Cu x O 4 (x = 0, 0.01, 0.03, 0.05). • ICP analysis showed that the controlling of the samples composition is easier by the CAC method. • The Seebeck coefficient in Cu-doped samples was higher compared to the undoped one. • The highest figure of merit was observed in the sample with the lowest Cu concentration. - Abstract: In the last decade, the sodium cobaltite ceramic became a promising candidate for potential thermoelectric applications, because of its large thermopower and low resistivity. In this work, polycrystalline samples of NaCo 2−x Cu x O 4 (x = 0, 0.01, 0.03, 0.05) were prepared using mechanochemically assisted solid-state reaction method (MASSR) and the citric acid complex method (CAC). Bulk samples were prepared by pressing into disc-shaped pellets and subsequently subjected to a thermal treatment at 880 °C in inert argon atmosphere. Changes in structural and microstructural characteristics of the samples, caused by the substitution of Cu for Co, were characterized using X-ray diffraction (XRD) analysis, and scanning electron microscopy (SEM), respectively. The results of inductively coupled plasma (ICP) analysis showed that the compositions of the final products correspond to γ-NaCo 2 O 4 and confirmed that desired compound was obtained in both syntheses procedures. The advantages and disadvantages of these two syntheses procedures have been observed and discussed: the CAC method enabled obtaining samples with higher density and fine microstructure compared to the MASSR method, thus better thermoelectric properties. The Cu 2+ substitution led to the increase in Seebeck coefficient in both synthesis routes. The highest figure of merit of 0.022 at 300 K was observed for the sample doped with 1 mol% Cu, obtained by the CAC method, and it was almost twice

Mechanochemically assisted solid-state and citric acid complex syntheses of Cu-doped sodium cobaltite ceramics

Energy Technology Data Exchange (ETDEWEB)

Pršić, S., E-mail: sanjaprsic@imsi.bg.ac.rs [Institute for Multidisciplinary Research, University of Belgrade, Kneza Višeslava 1, 11030 Belgrade (Serbia); Savić, S.M., E-mail: slavicas@imsi.bg.ac.rs [Institute for Multidisciplinary Research, University of Belgrade, Kneza Višeslava 1, 11030 Belgrade (Serbia); Branković, Z., E-mail: zorica.brankovic@imsi.bg.ac.rs [Institute for Multidisciplinary Research, University of Belgrade, Kneza Višeslava 1, 11030 Belgrade (Serbia); Vrtnik, S., E-mail: stane.vrtnik@ijs.si [Institute Jožef Stefan, Condensed Matter Physics, Jamova cesta 39, 1000 Ljubljana (Slovenia); Dapčević, A., E-mail: hadzi-tonic@tmf.bg.ac.rs [Department of General and Inorganic Chemistry, Faculty of Technology and Metallurgy, University of Belgrade, Karnegijeva 4, 11120 Belgrade (Serbia); Branković, G., E-mail: goran.brankovic@imsi.bg.ac.rs [Institute for Multidisciplinary Research, University of Belgrade, Kneza Višeslava 1, 11030 Belgrade (Serbia)

2015-08-15

Highlights: • Sodium cobaltite was synthesized by mechanochemically assisted solid-state reaction and citric acid complex (CAC) method. • We investigated effect of Cu-doping in NaCo{sub 2−x}Cu{sub x}O{sub 4} (x = 0, 0.01, 0.03, 0.05). • ICP analysis showed that the controlling of the samples composition is easier by the CAC method. • The Seebeck coefficient in Cu-doped samples was higher compared to the undoped one. • The highest figure of merit was observed in the sample with the lowest Cu concentration. - Abstract: In the last decade, the sodium cobaltite ceramic became a promising candidate for potential thermoelectric applications, because of its large thermopower and low resistivity. In this work, polycrystalline samples of NaCo{sub 2−x}Cu{sub x}O{sub 4} (x = 0, 0.01, 0.03, 0.05) were prepared using mechanochemically assisted solid-state reaction method (MASSR) and the citric acid complex method (CAC). Bulk samples were prepared by pressing into disc-shaped pellets and subsequently subjected to a thermal treatment at 880 °C in inert argon atmosphere. Changes in structural and microstructural characteristics of the samples, caused by the substitution of Cu for Co, were characterized using X-ray diffraction (XRD) analysis, and scanning electron microscopy (SEM), respectively. The results of inductively coupled plasma (ICP) analysis showed that the compositions of the final products correspond to γ-NaCo{sub 2}O{sub 4} and confirmed that desired compound was obtained in both syntheses procedures. The advantages and disadvantages of these two syntheses procedures have been observed and discussed: the CAC method enabled obtaining samples with higher density and fine microstructure compared to the MASSR method, thus better thermoelectric properties. The Cu{sup 2+} substitution led to the increase in Seebeck coefficient in both synthesis routes. The highest figure of merit of 0.022 at 300 K was observed for the sample doped with 1 mol% Cu, obtained by

Enhancement of Thermoelectric Performances in a Topological Crystal Insulator Pb0.7Sn0.3Se via Weak Perturbation of the Topological State and Chemical Potential Tuning by Chlorine Doping.

Science.gov (United States)

Lin, Chan-Chieh; Kim, Gareoung; Ginting, Dianta; Ahn, Kyunghan; Rhyee, Jong-Soo

2018-04-04

Topological insulators generally share commonalities with good thermoelectric (TE) materials because of their narrow band gaps and heavy constituent elements. Here, we propose that a topological crystalline insulator (TCI) could exhibit a high TE performance by breaking its crystalline symmetry and tuning the chemical potential by elemental doping. As a candidate material, we investigate the TE properties of the Cl-doped TCI Pb 0.7 Sn 0.3 Se. The infrared absorption spectra reveal that the band gap is increased from 0.055 eV for Pb 0.7 Sn 0.3 Se to 0.075 eV for Pb 0.7 Sn 0.3 Se 0.99 Cl 0.01 , confirming that the Cl doping can break the crystalline mirror symmetry of a TCI Pb 0.7 Sn 0.3 Se and thereby enlarge its bulk electronic band gap. The topological band inversion is confirmed by the extended X-ray absorption fine structure spectroscopy, which shows that the TCI state is weakened in a chlorine x = 0.05-doped compound. The small gap opening and partial linear band dispersion with massless and massive bands may have a high power factor (PF) for high electrical conductivity with an enhancement of the Seebeck coefficient. As a result, Pb 0.7 Sn 0.3 Se 0.99 Cl 0.01 shows a considerably enhanced ZT of 0.64 at 823 K, which is about 1200% enhancement in ZT compared with that of the undoped Pb 0.7 Sn 0.3 Se. This work demonstrates that the optimal n-type Cl doping tunes the chemical potential together with breaking the state of the TCI, suppresses the bipolar conduction at high temperatures, and thereby enables the Seebeck coefficient to increase up to 823 K, resulting in a significantly enhanced PF at high temperatures. In addition, the bipolar contribution to thermal conductivity is effectively suppressed for the Cl-doped samples of Pb 0.7 Sn 0.3 Se 1- x Cl x ( x ≥ 0.01). We propose that breaking the crystalline mirror symmetry in TCIs could be a new research direction for exploring high-performance TE materials.

Correlation between thermal expansion and Seebeck coefficient in polycrystalline cobalt oxide (Co3O4)

NARCIS (Netherlands)

Broemme, A.D.D.

1991-01-01

Characteristics of the cobalt-oxide spinel Co3O4 are described. Spinel is the name for a certain crystal structure that is built up out of three sublattices; one sublattice contains, in this case, only oxygen ions, and the other two sublattices, tetrahedral and octahedral, contain the metal cobalt

Thermoelectric Transport Signatures of Dirac Composite Fermions in the Half-Filled Landau Level

Science.gov (United States)

Potter, Andrew C.; Serbyn, Maksym; Vishwanath, Ashvin

2016-07-01

The half-filled Landau level is expected to be approximately particle-hole symmetric, which requires an extension of the Halperin-Lee-Read (HLR) theory of the compressible state observed at this filling. Recent work indicates that, when particle-hole symmetry is preserved, the composite fermions experience a quantized π -Berry phase upon winding around the composite Fermi surface, analogous to Dirac fermions at the surface of a 3D topological insulator. In contrast, the effective low-energy theory of the composite fermion liquid originally proposed by HLR lacks particle-hole symmetry and has vanishing Berry phase. In this paper, we explain how thermoelectric transport measurements can be used to test the Dirac nature of the composite fermions by quantitatively extracting this Berry phase. First, we point out that longitudinal thermopower (Seebeck effect) is nonvanishing because of the unusual nature of particle-hole symmetry in this context and is not sensitive to the Berry phase. In contrast, we find that off-diagonal thermopower (Nernst effect) is directly related to the topological structure of the composite Fermi surface, vanishing for zero Berry phase and taking its maximal value for π Berry phase. In contrast, in purely electrical transport signatures, the Berry phase contributions appear as small corrections to a large background signal, making the Nernst effect a promising diagnostic of the Dirac nature of composite fermions.

Electric control of emergent magnonic spin current and dynamic multiferroicity in magnetic insulators at finite temperatures

Science.gov (United States)

Wang, Xi-guang; Chotorlishvili, L.; Guo, Guang-hua; Berakdar, J.

2018-04-01

Conversion of thermal energy into magnonic spin currents and/or effective electric polarization promises new device functionalities. A versatile approach is presented here for generating and controlling open circuit magnonic spin currents and an effective multiferroicity at a uniform temperature with the aid of spatially inhomogeneous, external, static electric fields. This field applied to a ferromagnetic insulator with a Dzyaloshinskii-Moriya type coupling changes locally the magnon dispersion and modifies the density of thermally excited magnons in a region of the scale of the field inhomogeneity. The resulting gradient in the magnon density can be viewed as a gradient in the effective magnon temperature. This effective thermal gradient together with local magnon dispersion result in an open-circuit, electric field controlled magnonic spin current. In fact, for a moderate variation in the external electric field the predicted magnonic spin current is on the scale of the spin (Seebeck) current generated by a comparable external temperature gradient. Analytical methods supported by full-fledge numerics confirm that both, a finite temperature and an inhomogeneous electric field are necessary for this emergent non-equilibrium phenomena. The proposal can be integrated in magnonic and multiferroic circuits, for instance to convert heat into electrically controlled pure spin current using for example nanopatterning, without the need to generate large thermal gradients on the nanoscale.

Enhanced thermoelectric performance with participation of F-electrons in β-Zn4Sb3

International Nuclear Information System (INIS)

Liu, Mian; Qin, Xiaoying; Liu, Changsong; Li, Xiyu; Yang, Xiuhui

2014-01-01

Highlights: • Find an effective route to enhance the thermoelectric figure of merit of β-Zn 4 Sb 3 . • Provide the corresponding theoretical predictions. • Investigated the effects of doping Ce and Pr in β-Zn 4 Sb 3 . -- Abstract: The effects of rare-earth element impurities Ce and Pr on the electronic structure and thermoelectric properties of β-Zn 4 Sb 3 were investigated by performing self-consistent ab initio electronic structure calculations within density functional theory and solving the Boltzmann transport equations within the relaxation time approximation. The results demonstrated that these rare-earth element impurities with f orbitals could introduce giant sharp resonant peaks in the density of states (DOS) near the host valence band maximum in energy. And these deliberately engineered DOS peaks result in a sharp increase of the room-temperature Seebeck coefficient and power factor from those of impurity-free system by a factor of 100 and 22, respectively. Additionally, with the simultaneous declining of carrier thermal conductivity, a potential 5-fold increase at least with Ce doping and more than 3 times increase with Pr doping in the thermoelectric figure of merit of β-Zn 4 Sb 3 at room temperature are achieved. The effective DOS restructuring strategy opens up new opportunities for thermoelectric power generation and waste heat recovery at large scale

Enhanced thermoelectric performance with participation of F-electrons in β-Zn{sub 4}Sb{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Liu, Mian; Qin, Xiaoying, E-mail: xyqin@issp.ac.cn; Liu, Changsong; Li, Xiyu; Yang, Xiuhui

2014-01-25

Highlights: • Find an effective route to enhance the thermoelectric figure of merit of β-Zn{sub 4}Sb{sub 3}. • Provide the corresponding theoretical predictions. • Investigated the effects of doping Ce and Pr in β-Zn{sub 4}Sb{sub 3}. -- Abstract: The effects of rare-earth element impurities Ce and Pr on the electronic structure and thermoelectric properties of β-Zn{sub 4}Sb{sub 3} were investigated by performing self-consistent ab initio electronic structure calculations within density functional theory and solving the Boltzmann transport equations within the relaxation time approximation. The results demonstrated that these rare-earth element impurities with f orbitals could introduce giant sharp resonant peaks in the density of states (DOS) near the host valence band maximum in energy. And these deliberately engineered DOS peaks result in a sharp increase of the room-temperature Seebeck coefficient and power factor from those of impurity-free system by a factor of 100 and 22, respectively. Additionally, with the simultaneous declining of carrier thermal conductivity, a potential 5-fold increase at least with Ce doping and more than 3 times increase with Pr doping in the thermoelectric figure of merit of β-Zn{sub 4}Sb{sub 3} at room temperature are achieved. The effective DOS restructuring strategy opens up new opportunities for thermoelectric power generation and waste heat recovery at large scale.

The effect of simultaneous substitution on the electronic band structure and thermoelectric properties of Se-doped Co3SnInS2 with the Kagome lattice

Science.gov (United States)

Fujioka, Masaya; Shibuya, Taizo; Nakai, Junya; Yoshiyasu, Keigo; Sakai, Yuki; Takano, Yoshihiko; Kamihara, Yoichi; Matoba, Masanori

2014-12-01

The thermoelectric properties and electronic band structures for Se-doped Co3SnInS2 were examined. The parent compound of this material (Co3Sn2S2) has two kinds of Sn sites (Sn1 and Sn2 sites). The density functional theory (DFT) calculations show that the indium substitution at the Sn2 site induces a metallic band structure, on the other hand, a semiconducting band structure is obtained from substitution at the Sn1 site. However, according to the previous reports, since the indium atom prefers to replace the tin atom at the Sn1 site rather than the Sn2 site, the resistivity of Co3SnInS2 shows semiconducting-like behavior. In this study we have demonstrated that metallic behavior and a decrease in resistivity for Se-doped Co3SnInS2 occurs without suppression of the Seebeck coefficient. From the DFT calculations, when the selenium content is above 0.5, the total crystallographic energy shows that a higher indium occupancy at Sn2 site is more stable. Therefore, it is suggested that the selenium doping suppress the site preference for indium substitution. This is one of the possible explanations for the metallic conductivity observed in Se-doped Co3SnInS2

MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

Science.gov (United States)

Budak, S.; Heidary, K.; Johnson, R. B.; Colon, T.; Muntele, C.; Ila, D.

2014-08-01

The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S2σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

Energy Technology Data Exchange (ETDEWEB)

Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Heidary, K. [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Johnson, R.B.; Colon, T. [Department of Physics, Alabama A and M University, Huntsville, AL (United States); Muntele, C. [Cygnus Scientific Services, Huntsville, AL (United States); Ila, D. [Department of Physics, Fayetteville St. University, Fayetteville, NC (United States)

2014-08-15

The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S{sup 2}σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

Evolution of Thermoelectric Properties of Zn4Sb3 Prepared by Mechanical Alloying and Different Consolidation Routes

Directory of Open Access Journals (Sweden)

Pee-Yew Lee

2018-05-01

Full Text Available In this research, a method combining the mechanical alloying with the vacuum sintering or hot pressing was adopted to obtain the compact of β-Zn4Sb3. Pure zinc and antimony powders were used as the starting material for mechanical alloying. These powders were mixed in the stoichiometry ratio of 4 to 3, or more Zn-rich. Single phase Zn4Sb3 was produced using a nominally 0.6 at. % Zn rich powder. Thermoelectric Zn4Sb3 bulk specimens have been fabricated by vacuum sintering or hot pressing of mechanically alloyed powders at various temperatures from 373 to 673 K. For the bulk specimens sintering at high temperature, phase transformation of β-Zn4Sb3 to ZnSb and Sb was observed due to Zn vaporization. However, single-phase Zn4Sb3 bulk specimens with 97.87% of theoretical density were successfully produced by vacuum hot pressing at 473 K. Electric resistivity, Seebeck coefficient, and thermal conductivity were evaluated for the hot pressed specimens from room temperature to 673 K. The results indicate that the Zn4Sb3 shows an intrinsic p-type behavior. The increase of Zn4Sb3 phase ratio can increase Seebeck coefficient but decrease electric conductivity. The maximum power factor and figure of merit (ZT value were 1.31 × 10−3 W/mK2 and 0.81 at 600 K, respectively. The ZT value was lower than that reported in the available data for materials prepared by conventional melt growth and hot pressed methods, but higher than the samples fabricated by vacuum melting and heat treatment techniques.

Optimization of electrodeposited p-doped Sb{sub 2}Te{sub 3} thermoelectric films by millisecond potentiostatic pulses

Energy Technology Data Exchange (ETDEWEB)

Schumacher, Christian; Akinsinde, Lewis; Zastrow, Sebastian; Heiderich, Sonja; Toellner, William; Nielsch, Kornelius; Bachmann, Julien [Institute of Applied Physics, University of Hamburg, Jungiusstrasse 11, 20355 Hamburg (Germany); Reinsberg, Klaus G.; Broekaert, Jose A.C. [Institute of Applied and Inorganic Chemistry, University of Hamburg, Martin-Luther-King-Platz 6, 20146 Hamburg (Germany); Rampelberg, Geert; Detavernier, Christophe [Department of Solid State Sciences, University of Ghent, Krijgslaan 281/S1, 9000 Ghent (Belgium)

2012-03-15

A systematic optimization of p-type Sb{sub 2}Te{sub 3} thermoelectric films made by potentiostatic electrodeposition on Au and stainless steel substrates is presented. The influence of the preparative parameters of deposition voltage, concentration, and the deposition method are investigated in a nitric acid solution. As a postdeposition step, the influence of annealing the films is investigated. The use of a potential-controlled millisecond-pulsed deposition method could improve both the morphology and the composition of the films. The samples are characterized in terms of composition, crystallinity, Seebeck coefficient, and electrical resistivity. Pulsed-deposited films exhibit Seebeck coefficients of up to 160 {mu}V K{sup -1} and an electrical conductivity of 280 S cm{sup -1} at room temperature, resulting in power factors of about 700 {mu}W m{sup -1} K{sup -2}. After annealing, power factors of maximum 852 {mu}W m{sup -1} K{sup -2} are achieved. Although the annealing of DC-deposited films significantly increased the power factor, they do not reach the values of the pulsed-deposited films in the preannealing state. Structural analysis is performed with X-ray diffraction and shows the crystalline structure of Sb{sub 2}Te{sub 3} films. The performance is tuned by annealing of deposited films up to 300 C under He atmosphere while performing in-situ X-ray diffraction and resistivity measurements. The chemical analysis of the films is performed by inductively coupled plasma optical emission spectroscopy (ICP-OES) as well as scanning electron microscope energy dispersive X-ray analysis (SEM-EDX). (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Parametric modeling of energy filtering by energy barriers in thermoelectric nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Zianni, Xanthippi, E-mail: xzianni@teiste.gr, E-mail: xzianni@gmail.com [Department of Aircraft Technology, Technological Educational Institution of Sterea Ellada, 34400 Psachna (Greece); Department of Microelectronics, INN, NCSR “Demokritos,” 15310 Athens (Greece); Narducci, Dario [Department of Materials Science, University of Milano Bicocca, 20125 Milano (Italy)

2015-01-21

We present a parametric modeling of the thermoelectric transport coefficients based on a model previously used to interpret experimental measurements on the conductivity, σ, and Seebeck coefficient, S, in highly Boron-doped polycrystalline Si, where a very significant thermoelectric power factor (TPF) enhancement was observed. We have derived analytical formalism for the transport coefficients in the presence of an energy barrier assuming thermionic emission over the barrier for (i) non-degenerate and (ii) degenerate one-band semiconductor. Simple generic parametric equations are found that are in agreement with the exact Boltzmann transport formalism in a wide range of parameters. Moreover, we explore the effect of energy barriers in 1-d composite semiconductors in the presence of two phases: (a) the bulk-like phase and (b) the barrier phase. It is pointed out that significant TPF enhancement can be achieved in the composite structure of two phases with different thermal conductivities. The TPF enhancement is estimated as a function of temperature, the Fermi energy position, the type of scattering, and the barrier height. The derived modeling provides guidance for experiments and device design.

Thickness oscillations of the transport properties in n-type Bi{sub 2}Te{sub 3} topological insulator thin films

Energy Technology Data Exchange (ETDEWEB)

Rogacheva, E.I., E-mail: rogacheva@kpi.kharkov.ua [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze Street, Kharkov 61002 (Ukraine); Budnik, A.V.; Sipatov, A.Yu.; Nashchekina, O.N. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze Street, Kharkov 61002 (Ukraine); Fedorov, A.G. [Institute for Single Crystals of NAS of Ukraine, 60 Lenin Prospect, Kharkov 61001 (Ukraine); Dresselhaus, M.S.; Tang, S. [Department of Electrical Engineering and Computer Science and Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, MA 02139 (United States)

2015-11-02

The dependences of the electrical conductivity, Seebeck coefficient and Hall coefficient on the thickness (d = 20–155 nm) of the n-type thin films grown on the glass substrates by the thermal evaporation in vacuum of the n-type Bi{sub 2}Te{sub 3} topological insulator crystals have been measured. It has been established that these dependences have an oscillatory character with a substantial amplitude. The obtained results are interpreted in terms of quantum size effects, taking into account the peculiar properties of the surface layers of the Bi{sub 2}Te{sub 3} films connected with the topological insulator nature of the bismuth telluride. - Highlights: • The thickness dependences of Bi{sub 2}Te{sub 3} thin films kinetic coefficients were obtained. • The dependences have oscillatory character with a substantial undamped amplitude. • The oscillation period increases with decreasing film thickness. • The oscillations are attributed to electron confinement in the film growth direction. • It is suggested that topological surface layer affects quantum processes in films.

Quantum oscillations and nodal pockets from Fermi surface reconstruction in the underdoped cuprates

Science.gov (United States)

Harrison, Neil

2012-02-01

Fermiology in the underdoped high Tc cuprates presents us with unique challenges, requiring experimentalists to look deeper into the data than is normally required for clues. Recent measurements of an oscillatory chemical potential affecting the oscillations at high magnetic fields provide a strong indication of a single type of carrier pocket. When considered in conjunction with photoemission and specific heat measurements, a Fermi surface comprised almost entirely of nodal pockets is suggested. The mystery of the Fermi surface is deepened, however, by a near doping-independent Fermi surface cross-sectional area and negative Hall and Seebeck coefficients. We explore ways in which these findings can be reconciled, taking an important hint from the diverging effective mass yielded by quantum oscillations at low dopings. The author wishes to thank Suchitra Sebastian, Moaz Atarawneh, Doug Bonn, Walter Hardy, Ruixing Liang, Charles Mielke and Gilbert Lonzarich who have contributed to this work. The work is supported by the NSF through the NHMFL and by the DOE project ``Science at 100 tesla.''

Interference enhanced thermoelectricity in quinoid type structures

Energy Technology Data Exchange (ETDEWEB)

Strange, M., E-mail: strange@chem.ku.dk; Solomon, G. C. [Nano-Science Center and Department of Chemistry, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen Ø (Denmark); Seldenthuis, J. S.; Verzijl, C. J. O.; Thijssen, J. M. [Kavli Institute of Nanoscience, Delft University of Technology, 2628 CJ Delft (Netherlands)

2015-02-28

Quantum interference (QI) effects in molecular junctions may be used to obtain large thermoelectric responses. We study the electrical conductance G and the thermoelectric response of a series of molecules featuring a quinoid core using density functional theory, as well as a semi-empirical interacting model Hamiltonian describing the π-system of the molecule which we treat in the GW approximation. Molecules with a quinoid type structure are shown to have two distinct destructive QI features close to the frontier orbital energies. These manifest themselves as two dips in the transmission, that remain separated, even when either electron donating or withdrawing side groups are added. We find that the position of the dips in the transmission and the frontier molecular levels can be chemically controlled by varying the electron donating or withdrawing character of the side groups as well as the conjugation length inside the molecule. This feature results in a very high thermoelectric power factor S{sup 2}G and figure of merit ZT, where S is the Seebeck coefficient, making quinoid type molecules potential candidates for efficient thermoelectric devices.

Magneto-transport and thermoelectric properties of epitaxial FeSb{sub 2} thin film on MgO substrate

Energy Technology Data Exchange (ETDEWEB)

Duong, Anh Tuan; Rhim, S. H., E-mail: sonny@ulsan.ac.kr; Shin, Yooleemi; Nguyen, Van Quang; Cho, Sunglae, E-mail: slcho@ulsan.ac.kr [Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749 (Korea, Republic of)

2015-01-19

We report magneto-transport and thermoelectric properties of FeSb{sub 2} thin film epitaxially grown on the MgO substrate using molecular beam epitaxy. The film exhibits compressive strain of 1.74% owing to large lattice mismatch, whose physical consequences are nontrivial. Magnetic phase has been changed from diamagnetic in bulk, as evidenced by anomalous Hall effect (AHE) and negative magneto-resistance (MR). The FeSb{sub 2} film is semiconducting without any metallic transition unlike the bulk counterpart. In particular, hysteresis in MR with distinct feature of AHE is evident with coercive field of 500 and 110 Oe for T = 20 and 50 K, respectively. Furthermore, from the Seebeck coefficients and temperature dependence of the resistivity, it is evident that the film is semiconducting with small band gap: 3.76 meV for T < 40 K and 13.48 meV for T > 40 K, respectively, where maximum thermoelectric power factor of 12 μV/cm·K at T = 50 K.

TiNiSn and Zr{sub 0.5}Hf{sub 0.5}NiSn superlattices for thermoelectrics

Energy Technology Data Exchange (ETDEWEB)

Jaeger, Tino; Jakob, Gerhard [Institut fuer Physik, Universitaet Mainz, 55099 Mainz (Germany); Schwall, Michael; Kozina, Xeniya; Balke, Benjamin; Felser, Claudia [Institut fuer Analytische und Anorganische Chemie, Universitaet Mainz, 55099 Mainz (Germany); Populoh, Sascha; Weidenkaff, Anke [EMPA, Ueberlandstrasse 129, 8600 Duebendorf (Switzerland)

2012-07-01

In order to increase the attractiveness of thermoelectric devices, their efficiency must be increased. Beside others, the properties of the thermoelectric material can be improved. That can be achieved by either increasing Seebeck coefficient or conductivity or by a depressed thermal conductivity along the thermal gradient. For thin films, superlattices or multilayers can be used to lower the cross plane thermal conductivity. As a bottom up approach, artificially layered films with a periodicity of about 5-6 nm are assumed to generate the most phonon scattering at the interfaces. If electrical properties remain unchanged or less effected, the thermoelectric efficiency is enhanced. Semiconducting Half-Heuslers are well studied thermoelectric bulk materials. Among others, TiNiSn and Zr{sub 0.5}Hf{sub 0.5}NiSn are potential candidates. Essentially, their similar lattice constants enable epitaxial layers on top of each other. Furthermore, varied atomic masses of Ti, Zr and Hf generate the aspired alternating mass distribution. By rotating the substrate in between simultaneously burning cathodes, significant film thicknesses can be achieved by sputter deposition.

Anisotropic giant magnetoresistance in NbSb2

Science.gov (United States)

Wang, Kefeng; Graf, D.; Li, Lijun; Wang, Limin; Petrovic, C.

2014-01-01

The magnetic field response of the transport properties of novel materials and then the large magnetoresistance effects are of broad importance in both science and application. We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 105% in 2 K and 9 T field, and 4.3 × 106% in 0.4 K and 32 T field, without saturation) and field-induced metal-semiconductor-like transition, in NbSb2 single crystal. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed to the change of the Fermi surface induced by the magnetic field which is related to the Dirac-like point, in addition to orbital MR expected for high mobility metals. PMID:25476239

Significant enhancement of the thermoelectric figure of merit of polycrystalline Si films by reducing grain size

International Nuclear Information System (INIS)

Valalaki, K; Nassiopoulou, A G; Vouroutzis, N

2016-01-01

The thermoelectric properties of p-type polycrystalline silicon thin films deposited by low pressure chemical vapour deposition (LPCVD) were accurately determined at room temperature and the thermoelectric figure of merit was deduced as a function of film thickness, ranging from 100 to 500 nm. The effect of film thickness on their thermoelectric performance is discussed. More than threefold increase in the thermoelectric figure of merit of the 100 nm thick polysilicon film was observed compared to the 500 nm thick film, reaching a value as high as 0.033. This enhancement is mainly the result of the smaller grain size in the thinner films. With the decrease in grain size the resistivity of the films is increased twofold and electrical conductivity decreased, however the Seebeck coefficient is increased by 30% and the thermal conductivity is decreased eightfold, being mainly at the origin of the increased figure of merit of the 100 nm film. Our experimental results were compared to known theoretical models and the possible mechanisms involved are presented and discussed. (paper)

Electronic contributions to the transport properties and specific heat of solid UO2: an empirical, self-consistent analysis

International Nuclear Information System (INIS)

Hyland, G.J.; Ralph, J.

1982-07-01

From an empirical, self-consistent analysis of new high temperature data on the thermo-electric Seebeck coefficient and d.c. electrical conductivity, the value of the free energy controlling the equilibrium of the thermally induced reaction, 2U 4+ reversible U 3+ + U 5+ is determined (treating the U 3+ and U 5+ as small polarons) and used to calculate the contribution of the process to the high temperature thermal conductivity and specific heat of UO 2 . It is found that the transport properties can be completely accounted for in this way, but not the anomalous rise in specific heat - the origin of which remains obscure. (U.K.)

Thermoelectric properties of Al doped Mg{sub 2}Si material

Energy Technology Data Exchange (ETDEWEB)

Kaur, Kulwinder, E-mail: kulwindercmp@gmail.com; Kumar, Ranjan [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (India); Rani, Anita [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (India); Guru Nanak College for Girls, Sri Muktsar Sahib, Punjab (India)

2015-08-28

In the present paper we have calculated thermoelectric properties of Al doped Mg{sub 2}Si material (Mg{sub 2−x}Al{sub x}Si, x=0.06) using Pseudo potential plane wave method based on DFT and Semi classical Boltzmann theory. The calculations showed n-type conduction, indicating that the electrical conduction are due to electron. The electrical conductivity increasing with increasing temperature and the negative value of Seebeck Coefficient also show that the conduction is due to electron. The thermal conductivity was increased slightly by Al doping with increasing temperature due to the much larger contribution of lattice thermal conductivity over electronic thermal conductivity.