Scalable Nanomanufacturing—A Review

Directory of Open Access Journals (Sweden)

Khershed Cooper

2017-01-01

Full Text Available This article describes the field of scalable nanomanufacturing, its importance and need, its research activities and achievements. The National Science Foundation is taking a leading role in fostering basic research in scalable nanomanufacturing (SNM. From this effort several novel nanomanufacturing approaches have been proposed, studied and demonstrated, including scalable nanopatterning. This paper will discuss SNM research areas in materials, processes and applications, scale-up methods with project examples, and manufacturing challenges that need to be addressed to move nanotechnology discoveries closer to the marketplace.

Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene

Science.gov (United States)

Heilmann, M.; Bashouti, M.; Riechert, H.; Lopes, J. M. J.

2018-04-01

Van der Waals heterostructures comprising of hexagonal boron nitride and graphene are promising building blocks for novel two-dimensional devices such as atomically thin transistors or capacitors. However, demonstrators of those devices have been so far mostly fabricated by mechanical assembly, a non-scalable and time-consuming method, where transfer processes can contaminate the surfaces. Here, we investigate a direct growth process for the fabrication of insulating hexagonal boron nitride on high quality epitaxial graphene using plasma assisted molecular beam epitaxy. Samples were grown at varying temperatures and times and studied using atomic force microscopy, revealing a growth process limited by desorption at high temperatures. Nucleation was mostly commencing from morphological defects in epitaxial graphene, such as step edges or wrinkles. Raman spectroscopy combined with x-ray photoelectron measurements confirm the formation of hexagonal boron nitride and prove the resilience of graphene against the nitrogen plasma used during the growth process. The electrical properties and defects in the heterostructures were studied with high lateral resolution by tunneling current and Kelvin probe force measurements. This correlated approach revealed a nucleation apart from morphological defects in epitaxial graphene, which is mediated by point defects. The presented results help understanding the nucleation and growth behavior during van der Waals epitaxy of 2D materials, and point out a route for a scalable production of van der Waals heterostructures.

Solution-Processing of Organic Solar Cells: From In Situ Investigation to Scalable Manufacturing

KAUST Repository

Abdelsamie, Maged

2016-12-05

Photovoltaics provide a feasible route to fulfilling the substantial increase in demand for energy worldwide. Solution processable organic photovoltaics (OPVs) have attracted attention in the last decade because of the promise of low-cost manufacturing of sufficiently efficient devices at high throughput on large-area rigid or flexible substrates with potentially low energy and carbon footprints. In OPVs, the photoactive layer is made of a bulk heterojunction (BHJ) layer and is typically composed of a blend of an electron-donating (D) and an electron-accepting (A) materials which phase separate at the nanoscale and form a heterojunction at the D-A interface that plays a crucial role in the generation of charges. Despite the tremendous progress that has been made in increasing the efficiency of organic photovoltaics over the last few years, with power conversion efficiency increasing from 8% to 13% over the duration of this PhD dissertation, there have been numerous debates on the mechanisms of formation of the crucial BHJ layer and few clues about how to successfully transfer these lessons to scalable processes. This stems in large part from a lack of understanding of how BHJ layers form from solution. This lack of understanding makes it challenging to design BHJs and to control their formation in laboratory-based processes, such as spin-coating, let alone their successful transfer to scalable processes required for the manufacturing of organic solar cells. Consequently, the OPV community has in recent years sought out to better understand the key characteristics of state of the art lab-based organic solar cells and made efforts to shed light on how the BHJ forms in laboratory-based processes as well as in scalable processes. We take the view that understanding the formation of the solution-processed bulk heterojunction (BHJ) photoactive layer, where crucial photovoltaic processes take place, is the one of the most crucial steps to developing strategies towards the

Magnetically anisotropic additive for scalable manufacturing of polymer nanocomposite: iron-coated carbon nanotubes

International Nuclear Information System (INIS)

Yamamoto, Namiko; Manohara, Harish; Platzman, Ellen

2016-01-01

Novel nanoparticles additives for polymer nanocomposites were prepared by coating carbon nanotubes (CNTs) with ferromagnetic iron (Fe) layers, so that their micro-structures can be bulk-controlled by external magnetic field application. Application of magnetic fields is a promising, scalable method to deliver bulk amount of nanocomposites while maintaining organized nanoparticle assembly throughout the uncured polymer matrix. In this work, Fe layers (∼18 nm thick) were deposited on CNTs (∼38 nm diameter and ∼50 μm length) to form thin films with high aspect ratio, resulting in a dominance of shape anisotropy and thus high coercivity of ∼50–100 Oe. The Fe-coated CNTs were suspended in water and applied with a weak magnetic field of ∼75 G, and yet preliminary magnetic assembly was confirmed. Our results demonstrate that the fabricated Fe-coated CNTs are magnetically anisotropic and effectively respond to magnetic fields that are ∼10 3 times smaller than other existing work (∼10 5 G). We anticipate this work will pave the way for effective property enhancement and bulk application of CNT–polymer nanocomposites, through controlled micro-structure and scalable manufacturing. (paper)

Epitaxial growth of CZT(S,Se) on silicon

Science.gov (United States)

Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu

2016-03-15

Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

Control of metamorphic buffer structure and device performance of In(x)Ga(1-x)As epitaxial layers fabricated by metal organic chemical vapor deposition.

Science.gov (United States)

Nguyen, H Q; Yu, H W; Luc, Q H; Tang, Y Z; Phan, V T H; Hsu, C H; Chang, E Y; Tseng, Y C

2014-12-05

Using a step-graded (SG) buffer structure via metal-organic chemical vapor deposition, we demonstrate a high suitability of In0.5Ga0.5As epitaxial layers on a GaAs substrate for electronic device application. Taking advantage of the technique's precise control, we were able to increase the number of SG layers to achieve a fairly low dislocation density (∼10(6) cm(-2)), while keeping each individual SG layer slightly exceeding the critical thickness (∼80 nm) for strain relaxation. This met the demanded but contradictory requirements, and even offered excellent scalability by lowering the whole buffer structure down to 2.3 μm. This scalability overwhelmingly excels the forefront studies. The effects of the SG misfit strain on the crystal quality and surface morphology of In0.5Ga0.5As epitaxial layers were carefully investigated, and were correlated to threading dislocation (TD) blocking mechanisms. From microstructural analyses, TDs can be blocked effectively through self-annihilation reactions, or hindered randomly by misfit dislocation mechanisms. Growth conditions for avoiding phase separation were also explored and identified. The buffer-improved, high-quality In0.5Ga0.5As epitaxial layers enabled a high-performance, metal-oxide-semiconductor capacitor on a GaAs substrate. The devices displayed remarkable capacitance-voltage responses with small frequency dispersion. A promising interface trap density of 3 × 10(12) eV(-1) cm(-2) in a conductance test was also obtained. These electrical performances are competitive to those using lattice-coherent but pricey InGaAs/InP systems.

Down-side Risk Metrics as Portfolio Diversification Strategies across the GFC

NARCIS (Netherlands)

D.E. Allen (David); M.J. McAleer (Michael); R.J. Powell (Robert); A.K. Singh (Abhay)

2015-01-01

textabstractThis paper features an analysis of the effectiveness of a range of portfolio diversification strategies, with a focus on down-side risk metrics, as a portfolio diversification strategy in a European market context. We apply these measures to a set of daily arithmetically compounded

Single, aligned carbon nanotubes in 3D nanoscale architectures enabled by top-down and bottom-up manufacturable processes

International Nuclear Information System (INIS)

Kaul, Anupama B; Megerian, Krikor G; Von Allmen, Paul; Baron, Richard L

2009-01-01

We have developed manufacturable approaches for forming single, vertically aligned carbon nanotubes, where the tubes are centered precisely, and placed within a few hundred nm of 1-1.5 μm deep trenches. These wafer-scale approaches were enabled by using chemically amplified resists and high density, low pressure plasma etching techniques to form the 3D nanoscale architectures. The tube growth was performed using dc plasma-enhanced chemical vapor deposition (PECVD), and the materials used in the pre-fabricated 3D architectures were chemically and structurally compatible with the high temperature (700 deg. C) PECVD synthesis of our tubes, in an ammonia and acetylene ambient. Such scalable, high throughput top-down fabrication processes, when integrated with the bottom-up tube synthesis techniques, should accelerate the development of plasma grown tubes for a wide variety of applications in electronics, such as nanoelectromechanical systems, interconnects, field emitters and sensors. Tube characteristics were also engineered to some extent, by adjusting the Ni catalyst thickness, as well as the pressure and plasma power during growth.

Scalable Top-Down Approach Tailored by Interferometric Lithography to Achieve Large-Area Single-Mode GaN Nanowire Laser Arrays on Sapphire Substrate.

Science.gov (United States)

Behzadirad, Mahmoud; Nami, Mohsen; Wostbrock, Neal; Zamani Kouhpanji, Mohammad Reza; Feezell, Daniel F; Brueck, Steven R J; Busani, Tito

2018-03-27

GaN nanowires are promising for optical and optoelectronic applications because of their waveguiding properties and large optical band gap. However, developing a precise, scalable, and cost-effective fabrication method with a high degree of controllability to obtain high-aspect-ratio nanowires with high optical properties and minimum crystal defects remains a challenge. Here, we present a scalable two-step top-down approach using interferometric lithography, for which parameters can be controlled precisely to achieve highly ordered arrays of nanowires with excellent quality and desired aspect ratios. The wet-etch mechanism is investigated, and the etch rates of m-planes {11̅00} (sidewalls) were measured to be 2.5 to 70 nm/h depending on the Si doping concentration. Using this method, uniform nanowire arrays were achieved over a large area (>10 5 μm 2 ) with an spect ratio as large as 50, a radius as small as 17 nm, and atomic-scale sidewall roughness (top-down approach using interferometric lithography and is promising for fabrication of III-nitride-based nanophotonic devices (radial/axial) on the original substrate.

''Top-down'' versus ''side-on'' viewing of the inductively coupled plasma

International Nuclear Information System (INIS)

Faires, L.M.; Bieniewski, T.M.; Apel, C.T.; Niemczyk, T.M.

1985-01-01

The inductively coupled plasma is viewed by a ''top-down'' optical configuration, and the analytical performance is compared to conventional ''side-on'' viewing in terms of sensitivity, detection limits, linear dynamical range, self-reversal effects, and multielement performance. This comparison is made for a selection of eleven atom and ion lines of eight elements. The results of this study indicate distinct advantages in ''top-down'' viewing including improved sensitivity, lower detection limits, better signal-to-background ratios, and better compromise viewing position for multielement analysis. An exception to these advantages is increased self-absorption effects observed for the alkali elements

Scalable Density-Based Subspace Clustering

DEFF Research Database (Denmark)

Müller, Emmanuel; Assent, Ira; Günnemann, Stephan

2011-01-01

For knowledge discovery in high dimensional databases, subspace clustering detects clusters in arbitrary subspace projections. Scalability is a crucial issue, as the number of possible projections is exponential in the number of dimensions. We propose a scalable density-based subspace clustering...... method that steers mining to few selected subspace clusters. Our novel steering technique reduces subspace processing by identifying and clustering promising subspaces and their combinations directly. Thereby, it narrows down the search space while maintaining accuracy. Thorough experiments on real...... and synthetic databases show that steering is efficient and scalable, with high quality results. For future work, our steering paradigm for density-based subspace clustering opens research potential for speeding up other subspace clustering approaches as well....

Cascaded column generation for scalable predictive demand side management

NARCIS (Netherlands)

Toersche, Hermen; Molderink, Albert; Hurink, Johann L.; Smit, Gerardus Johannes Maria

2014-01-01

We propose a nested Dantzig-Wolfe decomposition, combined with dynamic programming, for the distributed scheduling of a large heterogeneous fleet of residential appliances with nonlinear behavior. A cascaded column generation approach gives a scalable optimization strategy, provided that the problem

Abstracts of 4. International Workshop on Molecular Beam Epitaxy and Vapour Phase Epitaxy Growth Physics and Technology

International Nuclear Information System (INIS)

2001-01-01

4. International Workshop on Molecular Beam Epitaxy and Vapour Phase Epitaxy Growth Physics and Technology is the periodically held forum for discussion the problems connected with manufacturing of different nanostructures (thin films, quantum wells, quantum dots) needed in microelectronics. Preparation of such materials with desirable optical, electrical and magnetic properties being determined by their chemical composition and crystal structure has been discussed in detail during the workshop sessions. Optimization of crystal growth methods such as VPE and MBE from the view point of obtained material properties has also been extensively discussed

Reclamation of a molecular beam epitaxy system and conversion for oxide epitaxy

International Nuclear Information System (INIS)

Carver, Alexander G.; Henderson, Walter; Doolittle, W. Alan

2008-01-01

An early 1980s vintage molecular beam epitaxy system, a Varian Gen II system, originally used for HgCdTe epitaxy, was converted into a system capable of growing thin-film complex metal oxides. The nature of some of the alternative oxides requires a thorough cleaning and, in some cases, complete replacement of system components. Details are provided regarding the chemistry of the etchants used, safety requirements for properly handling, and disposal of large quantities of etchants and etch by-products, and components that can be reused versus components that require replacement are given. Following the given procedures, an ultimate base pressure of 2x10 -10 Torr was obtained. Films grown in the system after reclamation contained no evidence of previously present materials down to the detection limit of secondary ion mass spectrometry

Scalable-to-lossless transform domain distributed video coding

DEFF Research Database (Denmark)

Huang, Xin; Ukhanova, Ann; Veselov, Anton

2010-01-01

Distributed video coding (DVC) is a novel approach providing new features as low complexity encoding by mainly exploiting the source statistics at the decoder based on the availability of decoder side information. In this paper, scalable-tolossless DVC is presented based on extending a lossy Tran...... codec provides frame by frame encoding. Comparing the lossless coding efficiency, the proposed scalable-to-lossless TDWZ video codec can save up to 5%-13% bits compared to JPEG LS and H.264 Intra frame lossless coding and do so as a scalable-to-lossless coding....

Scalable fabrication of perovskite solar cells

Energy Technology Data Exchange (ETDEWEB)

Li, Zhen; Klein, Talysa R.; Kim, Dong Hoe; Yang, Mengjin; Berry, Joseph J.; van Hest, Maikel F. A. M.; Zhu, Kai

2018-03-27

Perovskite materials use earth-abundant elements, have low formation energies for deposition and are compatible with roll-to-roll and other high-volume manufacturing techniques. These features make perovskite solar cells (PSCs) suitable for terawatt-scale energy production with low production costs and low capital expenditure. Demonstrations of performance comparable to that of other thin-film photovoltaics (PVs) and improvements in laboratory-scale cell stability have recently made scale up of this PV technology an intense area of research focus. Here, we review recent progress and challenges in scaling up PSCs and related efforts to enable the terawatt-scale manufacturing and deployment of this PV technology. We discuss common device and module architectures, scalable deposition methods and progress in the scalable deposition of perovskite and charge-transport layers. We also provide an overview of device and module stability, module-level characterization techniques and techno-economic analyses of perovskite PV modules.

Screen printing as a scalable and low-cost approach for rigid and flexible thin-film transistors using separated carbon nanotubes.

Science.gov (United States)

Cao, Xuan; Chen, Haitian; Gu, Xiaofei; Liu, Bilu; Wang, Wenli; Cao, Yu; Wu, Fanqi; Zhou, Chongwu

2014-12-23

Semiconducting single-wall carbon nanotubes are very promising materials in printed electronics due to their excellent mechanical and electrical property, outstanding printability, and great potential for flexible electronics. Nonetheless, developing scalable and low-cost approaches for manufacturing fully printed high-performance single-wall carbon nanotube thin-film transistors remains a major challenge. Here we report that screen printing, which is a simple, scalable, and cost-effective technique, can be used to produce both rigid and flexible thin-film transistors using separated single-wall carbon nanotubes. Our fully printed top-gated nanotube thin-film transistors on rigid and flexible substrates exhibit decent performance, with mobility up to 7.67 cm2 V(-1) s(-1), on/off ratio of 10(4)∼10(5), minimal hysteresis, and low operation voltage (transistors (bent with radius of curvature down to 3 mm) and driving capability for organic light-emitting diode have been demonstrated. Given the high performance of the fully screen-printed single-wall carbon nanotube thin-film transistors, we believe screen printing stands as a low-cost, scalable, and reliable approach to manufacture high-performance nanotube thin-film transistors for application in display electronics. Moreover, this technique may be used to fabricate thin-film transistors based on other materials for large-area flexible macroelectronics, and low-cost display electronics.

Down-Side Risk Metrics as Portfolio Diversification Strategies across the Global Financial Crisis

Directory of Open Access Journals (Sweden)

David E. Allen

2016-06-01

Full Text Available This paper features an analysis of the effectiveness of a range of portfolio diversification strategies, with a focus on down-side risk metrics, as a portfolio diversification strategy in a European market context. We apply these measures to a set of daily arithmetically-compounded returns, in U.S. dollar terms, on a set of ten market indices representing the major European markets for a nine-year period from the beginning of 2005 to the end of 2013. The sample period, which incorporates the periods of both the Global Financial Crisis (GFC and the subsequent European Debt Crisis (EDC, is a challenging one for the application of portfolio investment strategies. The analysis is undertaken via the examination of multiple investment strategies and a variety of hold-out periods and backtests. We commence by using four two-year estimation periods and a subsequent one-year investment hold out period, to analyse a naive 1/N diversification strategy and to contrast its effectiveness with Markowitz mean variance analysis with positive weights. Markowitz optimisation is then compared to various down-side investment optimisation strategies. We begin by comparing Markowitz with CVaR, and then proceed to evaluate the relative effectiveness of Markowitz with various draw-down strategies, utilising a series of backtests. Our results suggest that none of the more sophisticated optimisation strategies appear to dominate naive diversification.

Additive Manufacturing Cloud via Peer-Robot Collaboration

Directory of Open Access Journals (Sweden)

Yuan Yao

2016-05-01

Full Text Available When building a 3D printing cloud manufacturing platform, self-sensing and collaboration on manufacturing resources present challenging problems. This paper proposes a peer-robot collaboration framework to deal with these issues. Each robot combines heterogeneous additive manufacturing hardware and software, acting as an intelligent agent. Through collaboration with other robots, it forms a dynamic and scalable integration manufacturing system. The entire distributed system is managed by rules that employ an internal rule engine, which supports rule conversion and conflict resolution. Two additive manufacturing service scenarios are designed to analyse the efficiency and scalability of the framework. Experiments show that the presented method performs well in tasks requiring large-scale access to resources and collaboration.

General Top-Down Ion Exchange Process for the Growth of Epitaxial Chalcogenide Thin Films and Devices

KAUST Repository

Xia, Chuan; Li, Peng; Li, Jun; Jiang, Qiu; Zhang, Xixiang; Alshareef, Husam N.

2016-01-01

) epitaxial chalcogenide metallic and semiconducting films and (2) free-standing chalcogenide films and (3) completed in situ formation of atomically sharp heterojunctions by selective ion exchange. Epitaxial NiCo2S4 thin films prepared by our process show 115

Epi-Side-Down Mounting of Interband Cascade Lasers for Army Applications

Science.gov (United States)

2006-11-01

retain the principal advantage of electron recycling . However, unlike the QCL, the ICL relies on the cascading of interband optical transitions as...9.0 Cu 393 17 SiC 120 4 AlN 230 (high grade –Tsekoun 2006) 4.5, 4.3 Indium 83.7 24.8@ 20C 2 device ridge and an effective heat spreader ...65.3 K/W M271 epi-side down 8-μm x 1-mm mesa TmaxCW= 212K 4 were vital and survived multiple cryogenic to room temperature recyclings . Fig. 4

A repeatable and scalable fabrication method for sharp, hollow silicon microneedles

Science.gov (United States)

Kim, H.; Theogarajan, L. S.; Pennathur, S.

2018-03-01

Scalability and manufacturability are impeding the mass commercialization of microneedles in the medical field. Specifically, microneedle geometries need to be sharp, beveled, and completely controllable, difficult to achieve with microelectromechanical fabrication techniques. In this work, we performed a parametric study using silicon etch chemistries to optimize the fabrication of scalable and manufacturable beveled silicon hollow microneedles. We theoretically verified our parametric results with diffusion reaction equations and created a design guideline for a various set of miconeedles (80-160 µm needle base width, 100-1000 µm pitch, 40-50 µm inner bore diameter, and 150-350 µm height) to show the repeatability, scalability, and manufacturability of our process. As a result, hollow silicon microneedles with any dimensions can be fabricated with less than 2% non-uniformity across a wafer and 5% deviation between different processes. The key to achieving such high uniformity and consistency is a non-agitated HF-HNO3 bath, silicon nitride masks, and surrounding silicon filler materials with well-defined dimensions. Our proposed method is non-labor intensive, well defined by theory, and straightforward for wafer scale mass production, opening doors to a plethora of potential medical and biosensing applications.

Epitaxial Growth of Two-Dimensional Layered Transition-Metal Dichalcogenides: Growth Mechanism, Controllability, and Scalability

KAUST Repository

Li, Henan; Li, Ying; Aljarb, Areej; Shi, Yumeng; Li, Lain-Jong

2017-01-01

to generate high-quality TMDC layers with scalable size, controllable thickness, and excellent electronic properties suitable for both technological applications and fundamental sciences. The capability to precisely engineer 2D materials by chemical approaches

A novel microgrid demand-side management system for manufacturing facilities

Science.gov (United States)

Harper, Terance J.

Thirty-one percent of annual energy consumption in the United States occurs within the industrial sector, where manufacturing processes account for the largest amount of energy consumption and carbon emissions. For this reason, energy efficiency in manufacturing facilities is increasingly important for reducing operating costs and improving profits. Using microgrids to generate local sustainable power should reduce energy consumption from the main utility grid along with energy costs and carbon emissions. Also, microgrids have the potential to serve as reliable energy generators in international locations where the utility grid is often unstable. For this research, a manufacturing process that had approximately 20 kW of peak demand was matched with a solar photovoltaic array that had a peak output of approximately 3 KW. An innovative Demand-Side Management (DSM) strategy was developed to manage the process loads as part of this smart microgrid system. The DSM algorithm managed the intermittent nature of the microgrid and the instantaneous demand of the manufacturing process. The control algorithm required three input signals; one from the microgrid indicating the availability of renewable energy, another from the manufacturing process indicating energy use as a percent of peak production, and historical data for renewable sources and facility demand. Based on these inputs the algorithm had three modes of operation: normal (business as usual), curtailment (shutting off non-critical loads), and energy storage. The results show that a real-time management of a manufacturing process with a microgrid will reduce electrical consumption and peak demand. The renewable energy system for this research was rated to provide up to 13% of the total manufacturing capacity. With actively managing the process loads with the DSM program alone, electrical consumption from the utility grid was reduced by 17% on average. An additional 24% reduction was accomplished when the microgrid

Crickets are not a free lunch: protein capture from scalable organic side-streams via high-density populations of Acheta domesticus.

Directory of Open Access Journals (Sweden)

Mark E Lundy

Full Text Available It has been suggested that the ecological impact of crickets as a source of dietary protein is less than conventional forms of livestock due to their comparatively efficient feed conversion and ability to consume organic side-streams. This study measured the biomass output and feed conversion ratios of house crickets (Acheta domesticus reared on diets that varied in quality, ranging from grain-based to highly cellulosic diets. The measurements were made at a much greater population scale and density than any previously reported in the scientific literature. The biomass accumulation was strongly influenced by the quality of the diet (p99% mortality without reaching a harvestable size. Therefore, the potential for A. domesticus to sustainably supplement the global protein supply, beyond what is currently produced via grain-fed chickens, will depend on capturing regionally scalable organic side-streams of relatively high-quality that are not currently being used for livestock production.

SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

Science.gov (United States)

Choi, Shinhyun; Tan, Scott H.; Li, Zefan; Kim, Yunjo; Choi, Chanyeol; Chen, Pai-Yu; Yeon, Hanwool; Yu, Shimeng; Kim, Jeehwan

2018-01-01

Although several types of architecture combining memory cells and transistors have been used to demonstrate artificial synaptic arrays, they usually present limited scalability and high power consumption. Transistor-free analog switching devices may overcome these limitations, yet the typical switching process they rely on—formation of filaments in an amorphous medium—is not easily controlled and hence hampers the spatial and temporal reproducibility of the performance. Here, we demonstrate analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium. Such epitaxial random access memories utilize threading dislocations in SiGe to confine metal filaments in a defined, one-dimensional channel. This confinement results in drastically enhanced switching uniformity and long retention/high endurance with a high analog on/off ratio. Simulations using the MNIST handwritten recognition data set prove that epitaxial random access memories can operate with an online learning accuracy of 95.1%.

Affordable and Scalable Manufacturing of Wearable Multi-Functional Sensory “Skin” for Internet of Everything Applications

KAUST Repository

Nassar, Joanna M.

2017-10-01

Demand for wearable electronics is expected to at least triple by 2020, embracing all sorts of Internet of Everything (IoE) applications, such as activity tracking, environmental mapping, and advanced healthcare monitoring, in the purpose of enhancing the quality of life. This entails the wide availability of free-form multifunctional sensory systems (i.e “skin” platforms) that can conform to the variety of uneven surfaces, providing intimate contact and adhesion with the skin, necessary for localized and enhanced sensing capabilities. However, current wearable devices appear to be bulky, rigid and not convenient for continuous wear in everyday life, hindering their implementation into advanced and unexplored applications beyond fitness tracking. Besides, they retail at high price tags which limits their availability to at least half of the World’s population. Hence, form factor (physical flexibility and/or stretchability), cost, and accessibility become the key drivers for further developments. To support this need in affordable and adaptive wearables and drive academic developments in “skin” platforms into practical and functional consumer devices, compatibility and integration into a high performance yet low power system is crucial to sustain the high data rates and large data management driven by IoE. Likewise, scalability becomes essential for batch fabrication and precision. Therefore, I propose to develop three distinct but necessary “skin” platforms using scalable and cost effective manufacturing techniques. My first approach is the fabrication of a CMOS-compatible “silicon skin”, crucial for any truly autonomous and conformal wearable device, where monolithic integration between heterogeneous material-based sensory platform and system components is a challenge yet to be addressed. My second approach displays an even more affordable and accessible “paper skin”, using recyclable and off-the-shelf materials, targeting environmental

On the scalability of LISP and advanced overlaid services

OpenAIRE

Coras, Florin

2015-01-01

In just four decades the Internet has gone from a lab experiment to a worldwide, business critical infrastructure that caters to the communication needs of almost a half of the Earth's population. With these figures on its side, arguing against the Internet's scalability would seem rather unwise. However, the Internet's organic growth is far from finished and, as billions of new devices are expected to be joined in the not so distant future, scalability, or lack thereof, is commonly believed ...

Synchrotron radiation excited silicon epitaxy using disilane

International Nuclear Information System (INIS)

Akazawa, Housei; Utsumi, Yuichi

1995-01-01

Synchrotron radiation (SR) excited chemical reactions provide new crystal growth methods suitable for low-temperature Si epitaxy. The growth kinetics and film properties were investigated by atomic layer epitaxy (ALE) and photochemical vapor deposition (CVD) modes using Si 2 H 6 . SR-ALE, isolating the surface growth channel mediated by photon stimulated hydrogen desorption, achieves digital growth independent of gas exposure time, SR irradiation time, and substrate temperature. On the other hand in SR-CVD, photolysis of Si 2 H 6 is predominant. In the nonirradiated region, Eley-Rideal type reaction between the photofragments and the surface deposit Si adatoms in a layer-by-layer fashion. In the irradiated region, however, multi-layer photolysis and rebounding occurs within the condensed Si 2 H 6 layer. The pertinent elementary processes were identified by using the high-resolution time-of-flight mass spectroscopy. The SR-CVD can grow a uniform and epitaxial Si film down to 200degC. The surface morphology is controlled by the surfactant effect of hydrogen atoms. (author)

Improved vertical MOSFET performance using an epitaxial channel and a stacked silicon-insulator structure

International Nuclear Information System (INIS)

Uchino, T; Gili, E; Ashburn, P; Tan, L; Buiu, O; Hall, S

2012-01-01

A vertical MOSFET (VMOST) incorporating an epitaxial channel and a drain junction in a stacked silicon-insulator structure is presented. In this device structure, an oxide layer near the drain junction edge (referred to as a junction stop) acts as a dopant diffusion barrier and consequently a shallow drain junction is formed to suppress short channel effects. To investigate the scalability of this device, a simulation study in the sub-100 nm regime calibrated to measured results on the fabricated devices is carried out. The use of an epitaxial channel delivers 50% higher drive current due to the higher mobility of the retrograde channel and the junction stop structure delivers improvements of threshold voltage roll-off and drain-induced barrier lowering compared with a conventional VMOST. (fast track communication)

Non-Epitaxial Thin-Film Indium Phosphide Photovoltaics: Growth, Devices, and Cost Analysis

Science.gov (United States)

Zheng, Maxwell S.

In recent years, the photovoltaic market has grown significantly as module prices have continued to come down. Continued growth of the field requires higher efficiency modules at lower manufacturing costs. In particular, higher efficiencies reduce the area needed for a given power output, thus reducing the downstream balance of systems costs that scale with area such as mounting frames, installation, and soft costs. Cells and modules made from III-V materials have the highest demonstrated efficiencies to date but are not yet at the cost level of other thin film technologies, which has limited their large-scale deployment. There is a need for new materials growth, processing and fabrication techniques to address this major shortcoming of III-V semiconductors. Chapters 2 and 3 explore growth of InP on non-epitaxial Mo substrates by MOCVD and CSS, respectively. The results from these studies demonstrate that InP optoelectronic quality is maintained even by growth on non-epitaxial metal substrates. Structural characterization by SEM and XRD show stoichiometric InP can be grown in complete thin films on Mo. Photoluminescence measurements show peak energies and widths to be similar to those of reference wafers of similar doping concentrations. In chapter 4 the TF-VLS growth technique is introduced and cells fabricated from InP produced by this technique are characterized. The TF-VLS method results in lateral grain sizes of >500 mum and exhibits superior optoelectronic quality. First generation devices using a n-TiO2 window layer along with p-type TF-VLS grown InP have reached ˜12.1% power conversion efficiency under 1 sun illumination with VOC of 692 mV, JSC of 26.9 mA/cm2, and FF of 65%. The cells are fabricated using all non-epitaxial processing. Optical measurements show the InP in these cells have the potential to support a higher VOC of ˜795 mV, which can be achieved by improved device design. Chapter 5 describes a cost analysis of a manufacturing process using an

Enabling Highly-Scalable Remote Memory Access Programming with MPI-3 One Sided

Directory of Open Access Journals (Sweden)

Robert Gerstenberger

2014-01-01

Full Text Available Modern interconnects offer remote direct memory access (RDMA features. Yet, most applications rely on explicit message passing for communications albeit their unwanted overheads. The MPI-3.0 standard defines a programming interface for exploiting RDMA networks directly, however, it's scalability and practicability has to be demonstrated in practice. In this work, we develop scalable bufferless protocols that implement the MPI-3.0 specification. Our protocols support scaling to millions of cores with negligible memory consumption while providing highest performance and minimal overheads. To arm programmers, we provide a spectrum of performance models for all critical functions and demonstrate the usability of our library and models with several application studies with up to half a million processes. We show that our design is comparable to, or better than UPC and Fortran Coarrays in terms of latency, bandwidth and message rate. We also demonstrate application performance improvements with comparable programming complexity.

Voltage-controlled inversion of tunnel magnetoresistance in epitaxial nickel/graphene/MgO/cobalt junctions

Energy Technology Data Exchange (ETDEWEB)

Godel, F.; Doudin, B.; Henry, Y.; Halley, D., E-mail: halley@ipcms.unistra.fr, E-mail: dayen@ipcms.unistra.fr; Dayen, J.-F., E-mail: halley@ipcms.unistra.fr, E-mail: dayen@ipcms.unistra.fr [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS-UdS, 23 rue du Loess, 67034 Strasbourg (France); Venkata Kamalakar, M. [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 CNRS-UdS, 23 rue du Loess, 67034 Strasbourg (France); Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg (Sweden)

2014-10-13

We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer and a graphene-passivated Ni film as bottom ferromagnetic electrode. The devices show robust and scalable tunnel magnetoresistance, with several changes of sign upon varying the applied bias voltage. These findings are explained by a model of phonon-assisted transport mechanisms that relies on the peculiarity of the band structure and spin density of states at the hybrid graphene|Ni interface.

Some new understanding on the characteristics of geological structure and uranium metallogenetic prospect on both sides of the Shandianhe down-faulted zone

International Nuclear Information System (INIS)

Zhang Xuequan

1992-01-01

On the basis of the systematic work in the field and at the laboratory, the metallogenetic prognosis map (1:100000) of geological structures and uranium metallogenetic prospect on both sides of the Shandianhe down-faulted zone is compiled. According to this, the regional setting of metallogenesis is emphatically expounded and some new understanding is presented. After the detailed study on the characteristics of geological structures on both sides of the Shangdianhe down-faulted zone, the metallogenetic prospective area are selected and the further prospecting targets in the area are suggested

Operation and scalability of dopant-segregated Schottky barrier MOSFETs with recessed channels

International Nuclear Information System (INIS)

Shih, Chun-Hsing; Hsia, Jui-Kai

2013-01-01

Recessed channels were used in scaled dopant-segregated Schottky barrier MOSFETs (DS-SBMOS) to control the severe short-channel effect. The physical operation and device scalability of the DS-SBMOS resulting from the presence of recessed channels and associated gate-corners are elucidated. The coupling of Schottky and gate-corner barriers has a key function in determining the on–off switching and drain current. The gate-corner barriers divide the channel into three regions for protection from the drain penetration field. To prevent resistive degradations in the drive current, an alternative asymmetric recessed channel (ARC) without a source-side gate-corner is proposed to simultaneously optimize both the short-channel effect and drive current in the scaled DS-SBMOS. By employing the proposed ARC architecture, the DS-SBMOS devices can be successfully scaled down, making them promising candidates for next-generation CMOS devices. (paper)

Coherence in a transmon qubit with epitaxial tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Weides, Martin [National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Karlsruhe Institute of Technology (Germany); Kline, Jeffrey; Vissers, Michael; Sandberg, Martin; Pappas, David [National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Wisbey, David [National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Saint Louis University, St. Louis, Missouri 63103 (United States); Johnson, Blake; Ohki, Thomas [Raytheon BBN Technologies, Cambridge, Massachusetts 02138 (United States)

2012-07-01

Transmon qubits based on epitaxial tunnel junctions and interdigitated capacitors were developed. This multileveled qubit, patterned by use of all-optical lithography, is a step towards scalable qubits with a high integration density. The relaxation time T{sub 1} is.72-.86 {mu} sec and the ensemble dephasing time T{sub 2}{sup *} is slightly larger than T{sub 1}. The dephasing time T{sub 2} (1.36 {mu} sec) is nearly energy-relaxation-limited. Qubit spectroscopy yields weaker level splitting than observed in qubits with amorphous barriers in equivalent-size junctions. The qubit's inferred microwave loss closely matches the weighted losses of the individual elements (junction, wiring dielectric, and interdigitated capacitor), determined by independent resonator measurements.

Cloud manufacturing distributed computing technologies for global and sustainable manufacturing

CERN Document Server

Mehnen, Jörn

2013-01-01

Global networks, which are the primary pillars of the modern manufacturing industry and supply chains, can only cope with the new challenges, requirements and demands when supported by new computing and Internet-based technologies. Cloud Manufacturing: Distributed Computing Technologies for Global and Sustainable Manufacturing introduces a new paradigm for scalable service-oriented sustainable and globally distributed manufacturing systems.   The eleven chapters in this book provide an updated overview of the latest technological development and applications in relevant research areas.  Following an introduction to the essential features of Cloud Computing, chapters cover a range of methods and applications such as the factors that actually affect adoption of the Cloud Computing technology in manufacturing companies and new geometrical simplification method to stream 3-Dimensional design and manufacturing data via the Internet. This is further supported case studies and real life data for Waste Electrical ...

Laboratory Instrumentation Design Research for Scalable Next Generation Epitaxy: Non-Equilibrium Wide Application Epitaxial Patterning by Intelligent Control (NEW-EPIC). Volume 1. 3D Composition/Doping Control via Micromiror Patterned Deep UV Photodesorption: Revolutionary in situ Characterization/Control

Science.gov (United States)

2009-02-19

34 (to be submitted to APL) " Positron Annihilation Spectroscopy of Annealed and As-grown Be-doped GaN" (to be submitted to APL - delayed by the...WIDE APPLICATION EPITAXIAL PATTERNING BY INTELLIGENT CONTROL (NEW-EPIC) 6. AUTHOR(S) DRS DOOLITTILE, FRAZIER, BURNHAM, PRITCHETT, BILLINGSLEY...NEXT GENERATION EPITAXY: NON-EQUILIBRIUM WIDE APPLICATION EPITAXIAL PATTERNING BY INTELLIGENT CONTROL (NEW-EPIC) VOLUME I 3D COMPOSITION/DOPING

The influence of Fe doping on the surface topography of GaN epitaxial material

International Nuclear Information System (INIS)

Cui Lei; Yin Haibo; Jiang Lijuan; Wang Quan; Feng Chun; Xiao Hongling; Wang Cuimei; Wang Xiaoliang; Gong Jiamin; Zhang Bo; Li Baiquan; Wang Zhanguo

2015-01-01

Fe doping is an effective method to obtain high resistivity GaN epitaxial material. But in some cases, Fe doping could result in serious deterioration of the GaN material surface topography, which will affect the electrical properties of two dimensional electron gas (2DEG) in HEMT device. In this paper, the influence of Fe doping on the surface topography of GaN epitaxial material is studied. The results of experiments indicate that the surface topography of Fe-doped GaN epitaxial material can be effectively improved and the resistivity could be increased after increasing the growth rate of GaN materials. The GaN material with good surface topography can be manufactured when the Fe doping concentration is 9 × 10 19 cm −3 . High resistivity GaN epitaxial material which is 1 × 10 9 Ω·cm is achieved. (paper)

Strain in epitaxial high-index Bi{sub 2}Se{sub 3}(221) films grown by molecular-beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Li, Bin [Physics Department, The University of Hong Kong, Pokfulam Road (Hong Kong); Chen, Weiguang [College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); School of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou, Henan 450044 (China); Guo, Xin; Ho, Wingkin [Physics Department, The University of Hong Kong, Pokfulam Road (Hong Kong); Dai, Xianqi [College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); School of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou, Henan 450044 (China); Jia, Jinfeng [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Collaborative Innovation Center of Advanced Microstructures, Department of Physics and Astronomy, Shanghai Jiaotong University, 800 Dongchuan Road, Shanghai 200240 (China); Xie, Maohai, E-mail: mhxie@hku.hk [Physics Department, The University of Hong Kong, Pokfulam Road (Hong Kong)

2017-02-28

Highlights: • High-index, off c-axis, Bi{sub 2}Se{sub 3} has been grown by molecular beam epitaxy on In{sub 2}Se{sub 3}. • A retarded strain relaxation process in such high-index Bi{sub 2}Se{sub 3} is observed, enabling experimentally probe strain effect on topological insulators. • It has been shown by calculation that the Dirac electrons participate in chemical bonding at the heterointerface. - Abstract: High-index Bi{sub 2}Se{sub 3}(221) film has been grown on In{sub 2}Se{sub 3}-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi{sub 2}Se{sub 3}(221) can be attributed to the layered structure of Bi{sub 2}Se{sub 3} crystal, where the epifilm grown along [221] is like a pile of weakly-coupled quintuple layer slabs stacked side-by-side on substrate. Finally, we reveal strong chemical bonding at the interface of Bi{sub 2}Se{sub 3} and In{sub 2}Se{sub 3} by plotting differential charge contour calculated by first-principle method. This study points to the feasibility of achieving strained TIs for manipulating the properties of topological systems.

[Key points for esthetic rehabilitation of anterior teeth using chair-side computer aided design and computer aided manufacture technique].

Science.gov (United States)

Yang, J; Feng, H L

2018-04-09

With the rapid development of the chair-side computer aided design and computer aided manufacture (CAD/CAM) technology, its accuracy and operability of have been greatly improved in recent years. Chair-side CAD/CAM system may produce all kinds of indirect restorations, and has the advantages of rapid, accurate and stable production. It has become the future development direction of Stomatology. This paper describes the clinical application of the chair-side CAD/CAM technology for anterior aesthetic restorations from the aspects of shade and shape.

MgO monolayer epitaxy on Ni (100)

Science.gov (United States)

Sarpi, B.; Putero, M.; Hemeryck, A.; Vizzini, S.

2017-11-01

The growth of two-dimensional oxide films with accurate control of their structural and electronic properties is considered challenging for engineering nanotechnological applications. We address here the particular case of MgO ultrathin films grown on Ni (100), a system for which neither crystallization nor extended surface ordering has been established previously in the monolayer range. Using Scanning Tunneling Microscopy and Auger Electron Spectroscopy, we report on experiments showing MgO monolayer (ML) epitaxy on a ferromagnetic nickel surface, down to the limit of atomic thickness. Alternate steps of Mg ML deposition, O2 gas exposure, and ultrahigh vacuum thermal treatment enable the production of a textured film of ordered MgO nano-domains. This study could open interesting prospects for controlled epitaxy of ultrathin oxide films with a high magneto-resistance ratio on ferromagnetic substrates, enabling improvement in high-efficiency spintronics and magnetic tunnel junction devices.

Radiation hardness of silicon detectors manufactured on wafers from various sources

International Nuclear Information System (INIS)

Dezillie, B.; Bates, S.; Glaser, M.; Lemeilleur, F.; Leroy, C.

1997-01-01

Impurity concentrations in the initial silicon material are expected to play an important role for the radiation hardness of silicon detectors, during their irradiation and for their evolution with time after irradiation. This work reports on the experimental results obtained with detectors manufactured using various float-zone (FZ) and epitaxial-grown material. Preliminary results comparing the changes in leakage current and full depletion voltage of FZ and epitaxial detectors as a function of fluence and of time after 10 14 cm -2 proton irradiation are given. The measurement of charge collection efficiency for epitaxial detectors is also presented. (orig.)

Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

Energy Technology Data Exchange (ETDEWEB)

McDaniel, Martin D.; Ngo, Thong Q.; Hu, Shen; Ekerdt, John G., E-mail: ekerdt@utexas.edu [Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Posadas, Agham; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

2015-12-15

Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al{sub 2}O{sub 3} and HfO{sub 2}. However, there has been much effort to deposit ternary oxides, such as perovskites (ABO{sub 3}), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable.

Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

International Nuclear Information System (INIS)

McDaniel, Martin D.; Ngo, Thong Q.; Hu, Shen; Ekerdt, John G.; Posadas, Agham; Demkov, Alexander A.

2015-01-01

Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al 2 O 3 and HfO 2 . However, there has been much effort to deposit ternary oxides, such as perovskites (ABO 3 ), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable

Pumping requirements and options for molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

International Nuclear Information System (INIS)

McCollum, M.J.; Plano, M.A.; Haase, M.A.; Robbins, V.M.; Jackson, S.L.; Cheng, K.Y.; Stillman, G.E.

1989-01-01

This paper discusses the use of gas sources in growth by MBE as a result of current interest in growth of InP/InGaAsP/InGaAs lattice matched to InP. For gas flows greater than a few sccm, pumping speed requirements dictate the use of turbomolecular or diffusion pumps. GaAs samples with high p-type mobilities have been grown with diffusion pumped molecular beam epitaxial system. According to the authors, this demonstration of the inherent cleanliness of a properly designed diffusion pumping system indicates that a diffusion pump is an excellent inexpensive and reliable choice for growth by molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

Structural characterization of GaAs self-assembled quantum dots grown by Droplet Epitaxy on Ge virtual substrates on Si

International Nuclear Information System (INIS)

Frigeri, C.; Bietti, S.; Isella, G.; Sanguinetti, S.

2013-01-01

The structure of self-assembled quantum dots (QDs) grown by Droplet Epitaxy on Ge virtual substrates has been investigated by TEM. The QDs have a pyramidal shape with base and height of 50 nm. By (0 0 2) dark field TEM it was seen that the pyramid top is Ga poor and Al rich most likely because of the higher mobility of Ga along the pyramid sides down to the base. The investigated QDs contain defects identified as As precipitates by Moirè fringes. The smallest ones (3–5 nm) are coherent with the GaAs lattice suggesting that they could be a cubic phase of As precipitation. It seems to be a metastable phase since the hexagonal phase is recovered as the precipitate size increases above ∼5 nm.

Chirality-Controlled Growth of Single-Wall Carbon Nanotubes Using Vapor Phase Epitaxy: Mechanistic Understanding and Scalable Production

Science.gov (United States)

2016-09-15

AFRL-AFOSR-VA-TR-2016-0319 Chirality -Controlled Growth of Single-Wall Carbon Nanotubes Using Vapor Phase Epitaxy: Mechanistic Understanding and...TELEPHONE NUMBER (Include area code) DISTRIBUTION A: Distribution approved for public release. 15-06-2016 final Jun 2014 - Jun 2016 Chirality ...for Public Release; Distribution is Unlimited. In this report, we present our efforts in establishing a novel and effective approach for chirality

Superlinearly scalable noise robustness of redundant coupled dynamical systems.

Science.gov (United States)

Kohar, Vivek; Kia, Behnam; Lindner, John F; Ditto, William L

2016-03-01

We illustrate through theory and numerical simulations that redundant coupled dynamical systems can be extremely robust against local noise in comparison to uncoupled dynamical systems evolving in the same noisy environment. Previous studies have shown that the noise robustness of redundant coupled dynamical systems is linearly scalable and deviations due to noise can be minimized by increasing the number of coupled units. Here, we demonstrate that the noise robustness can actually be scaled superlinearly if some conditions are met and very high noise robustness can be realized with very few coupled units. We discuss these conditions and show that this superlinear scalability depends on the nonlinearity of the individual dynamical units. The phenomenon is demonstrated in discrete as well as continuous dynamical systems. This superlinear scalability not only provides us an opportunity to exploit the nonlinearity of physical systems without being bogged down by noise but may also help us in understanding the functional role of coupled redundancy found in many biological systems. Moreover, engineers can exploit superlinear noise suppression by starting a coupled system near (not necessarily at) the appropriate initial condition.

Epitaxial graphene

Science.gov (United States)

de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna; Sadowski, Marcin L.; Potemski, Marek; Martinez, Gérard

2007-07-01

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persist above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high-mobility epitaxial graphene. It appears that the effect is suppressed due to the absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low-dissipation high-speed nanoelectronics.

Epitaxial hexagonal materials on IBAD-textured substrates

Science.gov (United States)

Matias, Vladimir; Yung, Christopher

2017-08-15

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.

Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy.

Science.gov (United States)

Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R

2014-04-01

Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R., E-mail: smitha2@ohio.edu [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States)

2014-04-15

Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

International Nuclear Information System (INIS)

Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R.

2014-01-01

Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

Aggregate modeling of manufacturing systems

NARCIS (Netherlands)

Lefeber, A.A.J.; Armbruster, H.D.; Kempf, K.G.; Keskinocak, P.; Uzsoy, R.

2011-01-01

In this chapter we will present three approaches to model manufacturing systems in an aggregate way leading to fast and effective (i.e., scalable) simulations that allow the development of simulation tools for rapid exploration of different production scenarios in a factory as well as in a whole

Aggregate modeling of manufacturing systems

NARCIS (Netherlands)

Lefeber, A.A.J.; Armbruster, H.D.

2007-01-01

In this report we will present three approaches to model manufacturing systems in an aggregate way leading to fast and effective (i.e., scalable) simulations that allow the development of simulation tools for rapid exploration of different production scenarios in a factory as well as in a whole

The use of cloth fabric diffusion layers for scalable microbial fuel cells

KAUST Repository

Luo, Yong

2013-04-01

A scalable and pre-manufactured cloth material (Goretex® fabric) was used as a diffusion layer (DL) material as a replacement for a liquid-applied polytetrafluoroethylene (PTFE) DL. Cathodes with the Goretex fabric heat-bonded to the air-side of carbon cloth cathode (CC-Goretex) produced a maximum power density of 1330±30mW/m2, similar to that using a PTFE DL (1390±70mW/m2, CC-PTFE). This method was also successfully used to produce cathodes made of inexpensive carbon mesh, which resulted in only slightly less power (1180±10mW/m2) (CM-Goretex). Coulombic efficiencies were a function of current density, with the highest value for CC-PTFE cathodes (63%), similar to CC-Goretex cathodes (61%), and slightly larger than that obtained for the CM-Goretex cathodes (54%). These results show that a commercially available fabric can easily be used as the DL in an MFC, achieving performance similar to that obtained with a more labor-intensive process based on liquid-applied DLs using PTFE. © 2013 Elsevier B.V.

Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Xu, Zhongguang; Khanaki, Alireza; Tian, Hao; Zheng, Renjing; Suja, Mohammad; Liu, Jianlin, E-mail: jianlin@ece.ucr.edu [Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States); Zheng, Jian-Guo [Irvine Materials Research Institute, University of California, Irvine, California 92697-2800 (United States)

2016-07-25

Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5–6 nm)/G (26–27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ∼2.5–3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.

Liquid phase epitaxy of gallium arsenide - a review

International Nuclear Information System (INIS)

Alexiev, D.; Edmondson, M.; Butcher, K.S.A.; Tansley, T.

1992-07-01

Liquid phase epitaxy of gallium arsenide has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide band, compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades, the authors point out that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point of view on how this subject developed. 70 refs., 5 figs

Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

Science.gov (United States)

Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

2016-07-12

A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

Scalable devices

KAUST Repository

Krüger, Jens J.

2014-01-01

In computer science in general and in particular the field of high performance computing and supercomputing the term scalable plays an important role. It indicates that a piece of hardware, a concept, an algorithm, or an entire system scales with the size of the problem, i.e., it can not only be used in a very specific setting but it\\'s applicable for a wide range of problems. From small scenarios to possibly very large settings. In this spirit, there exist a number of fixed areas of research on scalability. There are works on scalable algorithms, scalable architectures but what are scalable devices? In the context of this chapter, we are interested in a whole range of display devices, ranging from small scale hardware such as tablet computers, pads, smart-phones etc. up to large tiled display walls. What interests us mostly is not so much the hardware setup but mostly the visualization algorithms behind these display systems that scale from your average smart phone up to the largest gigapixel display walls.

Temporal Scalability of Dynamic Volume Data using Mesh Compensated Wavelet Lifting.

Science.gov (United States)

Schnurrer, Wolfgang; Pallast, Niklas; Richter, Thomas; Kaup, Andre

2017-10-12

Due to their high resolution, dynamic medical 2D+t and 3D+t volumes from computed tomography (CT) and magnetic resonance tomography (MR) reach a size which makes them very unhandy for teleradiologic applications. A lossless scalable representation offers the advantage of a down-scaled version which can be used for orientation or previewing, while the remaining information for reconstructing the full resolution is transmitted on demand. The wavelet transform offers the desired scalability. A very high quality of the lowpass sub-band is crucial in order to use it as a down-scaled representation. We propose an approach based on compensated wavelet lifting for obtaining a scalable representation of dynamic CT and MR volumes with very high quality. The mesh compensation is feasible to model the displacement in dynamic volumes which is mainly given by expansion and contraction of tissue over time. To achieve this, we propose an optimized estimation of the mesh compensation parameters to optimally fit for dynamic volumes. Within the lifting structure, the inversion of the motion compensation is crucial in the update step. We propose to take this inversion directly into account during the estimation step and can improve the quality of the lowpass sub-band by 0.63 dB and 0.43 dB on average for our tested dynamic CT and MR volumes at the cost of an increase of the rate by 2.4% and 1.2% on average.

Topology Optimization for Additive Manufacturing

DEFF Research Database (Denmark)

Clausen, Anders

This PhD thesis deals with the combination of topology optimization and additive man-ufacturing (AM, also known as 3D-printing). In addition to my own works, the thesis contains a broader review and assessment of the literature within the field. The thesis first presents a classification...... of the various AM technologies, a review of relevant manufacturing materials, the properties of these materials in the additively manufactured part, as well as manufacturing constraints with a potential for design optimization. Subsequently, specific topology optimization formulations relevant for the most im...... for scalable manufacturing. In relation to interface problems it is shown how a flexible void area may be included into a standard minimum compliance problem by employing an additional design variable field and a sensitivity filter. Furthermore, it is shown how the design of coated structures may be modeled...

Perspective: The future of quantum dot photonic integrated circuits

Directory of Open Access Journals (Sweden)

Justin C. Norman

2018-03-01

Full Text Available Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiencies of 87%, and output powers of 175 mW at 20 °C. 1500-h reliability tests at 35 °C showed an extrapolated mean-time-to-failure of more than ten million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with complementary metal-oxide-semiconductor (CMOS foundries.

Perspective: The future of quantum dot photonic integrated circuits

Science.gov (United States)

Norman, Justin C.; Jung, Daehwan; Wan, Yating; Bowers, John E.

2018-03-01

Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiencies of 87%, and output powers of 175 mW at 20 °C. 1500-h reliability tests at 35 °C showed an extrapolated mean-time-to-failure of more than ten million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with complementary metal-oxide-semiconductor (CMOS) foundries.

[Clinical skills and outcomes of chair-side computer aided design and computer aided manufacture system].

Science.gov (United States)

Yu, Q

2018-04-09

Computer aided design and computer aided manufacture (CAD/CAM) technology is a kind of oral digital system which is applied to clinical diagnosis and treatment. It overturns the traditional pattern, and provides a solution to restore defect tooth quickly and efficiently. In this paper we mainly discuss the clinical skills of chair-side CAD/CAM system, including tooth preparation, digital impression, the three-dimensional design of prosthesis, numerical control machining, clinical bonding and so on, and review the outcomes of several common kinds of materials at the same time.

Content-Aware Scalability-Type Selection for Rate Adaptation of Scalable Video

Directory of Open Access Journals (Sweden)

Tekalp A Murat

2007-01-01

Full Text Available Scalable video coders provide different scaling options, such as temporal, spatial, and SNR scalabilities, where rate reduction by discarding enhancement layers of different scalability-type results in different kinds and/or levels of visual distortion depend on the content and bitrate. This dependency between scalability type, video content, and bitrate is not well investigated in the literature. To this effect, we first propose an objective function that quantifies flatness, blockiness, blurriness, and temporal jerkiness artifacts caused by rate reduction by spatial size, frame rate, and quantization parameter scaling. Next, the weights of this objective function are determined for different content (shot types and different bitrates using a training procedure with subjective evaluation. Finally, a method is proposed for choosing the best scaling type for each temporal segment that results in minimum visual distortion according to this objective function given the content type of temporal segments. Two subjective tests have been performed to validate the proposed procedure for content-aware selection of the best scalability type on soccer videos. Soccer videos scaled from 600 kbps to 100 kbps by the proposed content-aware selection of scalability type have been found visually superior to those that are scaled using a single scalability option over the whole sequence.

Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication.

Science.gov (United States)

Damilano, B; Vézian, S; Brault, J; Alloing, B; Massies, J

2016-03-09

Post-growth in situ partial SiNx masking of GaN-based epitaxial layers grown in a molecular beam epitaxy reactor is used to get GaN selective area sublimation (SAS) by high temperature annealing. Using this top-down approach, nanowires (NWs) with nanometer scale diameter are obtained from GaN and InxGa1-xN/GaN quantum well epitaxial structures. After GaN regrowth on InxGa1-xN/GaN NWs resulting from SAS, InxGa1-xN quantum disks (QDisks) with nanometer sizes in the three dimensions are formed. Low temperature microphotoluminescence experiments demonstrate QDisk multilines photon emission around 3 eV with individual line widths of 1-2 meV.

Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector

Science.gov (United States)

Kalra, Anisha; Vura, Sandeep; Rathkanthiwar, Shashwat; Muralidharan, Rangarajan; Raghavan, Srinivasan; Nath, Digbijoy N.

2018-06-01

We demonstrate epitaxial β-Ga2O3/GaN-based vertical metal–heterojunction-metal (MHM) broadband UV-A/UV-C photodetectors with high responsivity (3.7 A/W) at 256 and 365 nm, UV-to-visible rejection >103, and a photo-to-dark current ratio of ∼100. A small (large) conduction (valence) band offset at the heterojunction of pulsed laser deposition (PLD)-grown β-Ga2O3 on metal organic chemical vapor deposition (MOCVD)-grown GaN-on-silicon with epitaxial registry, as confirmed by X-ray diffraction (XRD) azimuthal scanning, is exploited to realize detectors with an asymmetric photoresponse and is explained with one-dimensional (1D) band diagram simulations. The demonstrated novel vertical MHM detectors on silicon are fully scalable and promising for enabling focal plane arrays for broadband ultraviolet sensing.

Epitaxial hexagonal materials on IBAD-textured substrates

Energy Technology Data Exchange (ETDEWEB)

Matias, Vladimir; Yung, Christopher

2017-08-15

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.

Epitaxial growth of hybrid nanostructures

Science.gov (United States)

Tan, Chaoliang; Chen, Junze; Wu, Xue-Jun; Zhang, Hua

2018-02-01

Hybrid nanostructures are a class of materials that are typically composed of two or more different components, in which each component has at least one dimension on the nanoscale. The rational design and controlled synthesis of hybrid nanostructures are of great importance in enabling the fine tuning of their properties and functions. Epitaxial growth is a promising approach to the controlled synthesis of hybrid nanostructures with desired structures, crystal phases, exposed facets and/or interfaces. This Review provides a critical summary of the state of the art in the field of epitaxial growth of hybrid nanostructures. We discuss the historical development, architectures and compositions, epitaxy methods, characterization techniques and advantages of epitaxial hybrid nanostructures. Finally, we provide insight into future research directions in this area, which include the epitaxial growth of hybrid nanostructures from a wider range of materials, the study of the underlying mechanism and determining the role of epitaxial growth in influencing the properties and application performance of hybrid nanostructures.

GaN-on-Si blue/white LEDs: epitaxy, chip, and package

Science.gov (United States)

Qian, Sun; Wei, Yan; Meixin, Feng; Zengcheng, Li; Bo, Feng; Hanmin, Zhao; Hui, Yang

2016-04-01

The dream of epitaxially integrating III-nitride semiconductors on large diameter silicon is being fulfilled through the joint R&D efforts of academia and industry, which is driven by the great potential of GaN-on-silicon technology in improving the efficiency yet at a much reduced manufacturing cost for solid state lighting and power electronics. It is very challenging to grow high quality GaN on Si substrates because of the huge mismatch in the coefficient of thermal expansion (CTE) and the large mismatch in lattice constant between GaN and silicon, often causing a micro-crack network and a high density of threading dislocations (TDs) in the GaN film. Al-composition graded AlGaN/AlN buffer layers have been utilized to not only build up a compressive strain during the high temperature growth for compensating the tensile stress generated during the cool down, but also filter out the TDs to achieve crack-free high-quality n-GaN film on Si substrates, with an X-ray rocking curve linewidth below 300 arcsec for both (0002) and (101¯2) diffractions. Upon the GaN-on-Si templates, prior to the deposition of p-AlGaN and p-GaN layers, high quality InGaN/GaN multiple quantum wells (MQWs) are overgrown with well-engineered V-defects intentionally incorporated to shield the TDs as non-radiative recombination centers and to enhance the hole injection into the MQWs through the via-like structures. The as-grown GaN-on-Si LED wafers are processed into vertical structure thin film LED chips with a reflective p-electrode and the N-face surface roughened after the removal of the epitaxial Si(111) substrates, to enhance the light extraction efficiency. We have commercialized GaN-on-Si LEDs with an average efficacy of 150-160 lm/W for 1mm2 LED chips at an injection current of 350 mA, which have passed the 10000-h LM80 reliability test. The as-produced GaN-on-Si LEDs featured with a single-side uniform emission and a nearly Lambertian distribution can adopt the wafer-level phosphor

Truck side guard specifications : recommended standard

Science.gov (United States)

2016-09-01

This document is intended to be used by (1) public or private medium/heavy-duty truck fleets considering adding side guards; (2) jurisdictions or customers that require side guards through policy or procurement; (3) manufacturers of side guards; and ...

Development of Production PVD-AIN Buffer Layer System and Processes to Reduce Epitaxy Costs and Increase LED Efficiency

Energy Technology Data Exchange (ETDEWEB)

Cerio, Frank

2013-09-14

The DOE has set aggressive goals for solid state lighting (SSL) adoption, which require manufacturing and quality improvements for virtually all process steps leading to an LED luminaire product. The goals pertinent to this proposed project are to reduce the cost and improve the quality of the epitaxial growth processes used to build LED structures. The objectives outlined in this proposal focus on achieving cost reduction and performance improvements over state-of-the-art, using technologies that are low in cost and amenable to high efficiency manufacturing. The objectives of the outlined proposal focus on cost reductions in epitaxial growth by reducing epitaxy layer thickness and hetero-epitaxial strain, and by enabling the use of larger, less expensive silicon substrates and would be accomplished through the introduction of a high productivity reactive sputtering system and an effective sputtered aluminum-nitride (AlN) buffer/nucleation layer process. Success of the proposed project could enable efficient adoption of GaN on-silicon (GaN/Si) epitaxial technology on 150mm silicon substrates. The reduction in epitaxy cost per cm{sup 2} using 150mm GaN-on-Si technology derives from (1) a reduction in cost of ownership and increase in throughput for the buffer deposition process via the elimination of MOCVD buffer layers and other throughput and CoO enhancements, (2) improvement in brightness through reductions in defect density, (3) reduction in substrate cost through the replacement of sapphire with silicon, and (4) reduction in non-ESD yield loss through reductions in wafer bow and temperature variation. The adoption of 150mm GaN/Si processing will also facilitate significant cost reductions in subsequent wafer fabrication manufacturing costs. There were three phases to this project. These three phases overlap in order to aggressively facilitate a commercially available production GaN/Si capability. In Phase I of the project, the repeatability of the performance

An update on coating/manufacturing techniques of microneedles.

Science.gov (United States)

Tarbox, Tamara N; Watts, Alan B; Cui, Zhengrong; Williams, Robert O

2017-12-29

Recently, results have been published for the first successful phase I human clinical trial investigating the use of dissolving polymeric microneedles… Even so, further clinical development represents an important hurdle that remains in the translation of microneedle technology to approved products. Specifically, the potential for accumulation of polymer within the skin upon repeated application of dissolving and coated microneedles, combined with a lack of safety data in humans, predicates a need for further clinical investigation. Polymers are an important consideration for microneedle technology-from both manufacturing and drug delivery perspectives. The use of polymers enables a tunable delivery strategy, but the scalability of conventional manufacturing techniques could arguably benefit from further optimization. Micromolding has been suggested in the literature as a commercially viable means to mass production of both dissolving and swellable microneedles. However, the reliance on master molds, which are commonly manufactured using resource intensive microelectronics industry-derived processes, imparts notable material and design limitations. Further, the inherently multi-step filling and handling processes associated with micromolding are typically batch processes, which can be challenging to scale up. Similarly, conventional microneedle coating processes often follow step-wise batch processing. Recent developments in microneedle coating and manufacturing techniques are highlighted, including micromilling, atomized spraying, inkjet printing, drawing lithography, droplet-born air blowing, electro-drawing, continuous liquid interface production, 3D printing, and polyelectrolyte multilayer coating. This review provides an analysis of papers reporting on potentially scalable production techniques for the coating and manufacturing of microneedles.

EDITORIAL: Epitaxial graphene Epitaxial graphene

Science.gov (United States)

de Heer, Walt A.; Berger, Claire

2012-04-01

Graphene is widely regarded as an important new electronic material with interesting two-dimensional electron gas properties. Not only that, but graphene is widely considered to be an important new material for large-scale integrated electronic devices that may eventually even succeed silicon. In fact, there are countless publications that demonstrate the amazing applications potential of graphene. In order to realize graphene electronics, a platform is required that is compatible with large-scale electronics processing methods. It was clear from the outset that graphene grown epitaxially on silicon carbide substrates was exceptionally well suited as a platform for graphene-based electronics, not only because the graphene sheets are grown directly on electronics-grade silicon carbide (an important semiconductor in its own right), but also because these sheets are oriented with respect to the semiconductor. Moreover, the extremely high temperatures involved in production assure essentially defect-free and contamination-free materials with well-defined interfaces. Epitaxial graphene on silicon carbide is not a unique material, but actually a class of materials. It is a complex structure consisting of a reconstructed silicon carbide surface, which, for planar hexagonal silicon carbide, is either the silicon- or the carbon-terminated face, an interfacial carbon rich layer, followed by one or more graphene layers. Consequently, the structure of graphene films on silicon carbide turns out to be a rich surface-science puzzle that has been intensively studied and systematically unravelled with a wide variety of surface science probes. Moreover, the graphene films produced on the carbon-terminated face turn out to be rotationally stacked, resulting in unique and important structural and electronic properties. Finally, in contrast to essentially all other graphene production methods, epitaxial graphene can be grown on structured silicon carbide surfaces to produce graphene

Bi-epitaxial YBa2Cu3Ox Thin Films on Tilted-axes NdGaO3 Substrates with CeO2 Seeding Layer

International Nuclear Information System (INIS)

Mozhaev, P B; Mozhaeva, J E; Jacobsen, C S; Hansen, J Bindslev; Bdikin, I K; Luzanov, V A; Kotelyanskii, I M; Zybtsev, S G

2006-01-01

Bi-epitaxial YBa 2 Cu 3 O x (YBCO) thin films with out-of-plane tilt angle in the range 18 - 27 0 were manufactured using pulsed laser deposition on NdGaO 3 tilted-axes substrates with CeO 2 seeding layers. The YBCO thin film orientation over the seeding layer depended on deposition conditions. Removal of the seeding layer from part of the substrate surface by ionbeam etching resulted in formation of a bi-epitaxial thin film with different c-axis orientation of two parts of the film. The bi-epitaxial film orientation and structure were studied using X-ray diffraction techniques, and surface morphology was observed with atomic force microscope (AFM). Photolithography and ion-beam etching techniques were used for patterning bi-epitaxial thin films. Electrical characterization of the obtained structures was performed

Scalability Dilemma and Statistic Multiplexed Computing — A Theory and Experiment

Directory of Open Access Journals (Sweden)

Justin Yuan Shi

2017-08-01

Full Text Available The For the last three decades, end-to-end computing paradigms, such as MPI (Message Passing Interface, RPC (Remote Procedure Call and RMI (Remote Method Invocation, have been the de facto paradigms for distributed and parallel programming. Despite of the successes, applications built using these paradigms suffer due to the proportionality factor of crash in the application with its size. Checkpoint/restore and backup/recovery are the only means to save otherwise lost critical information. The scalability dilemma is such a practical challenge that the probability of the data losses increases as the application scales in size. The theoretical significance of this practical challenge is that it undermines the fundamental structure of the scientific discovery process and mission critical services in production today. In 1997, the direct use of end-to-end reference model in distributed programming was recognized as a fallacy. The scalability dilemma was predicted. However, this voice was overrun by the passage of time. Today, the rapidly growing digitized data demands solving the increasingly critical scalability challenges. Computing architecture scalability, although loosely defined, is now the front and center of large-scale computing efforts. Constrained only by the economic law of diminishing returns, this paper proposes a narrow definition of a Scalable Computing Service (SCS. Three scalability tests are also proposed in order to distinguish service architecture flaws from poor application programming. Scalable data intensive service requires additional treatments. Thus, the data storage is assumed reliable in this paper. A single-sided Statistic Multiplexed Computing (SMC paradigm is proposed. A UVR (Unidirectional Virtual Ring SMC architecture is examined under SCS tests. SMC was designed to circumvent the well-known impossibility of end-to-end paradigms. It relies on the proven statistic multiplexing principle to deliver reliable service

Scalable 3D bicontinuous fluid networks: polymer heat exchangers toward artificial organs.

Science.gov (United States)

Roper, Christopher S; Schubert, Randall C; Maloney, Kevin J; Page, David; Ro, Christopher J; Yang, Sophia S; Jacobsen, Alan J

2015-04-17

A scalable method for fabricating architected materials well-suited for heat and mass exchange is presented. These materials exhibit unprecedented combinations of small hydraulic diameters (13.0-0.09 mm) and large hydraulic-diameter-to-thickness ratios (5.0-30,100). This process expands the range of material architectures achievable starting from photopolymer waveguide lattices or additive manufacturing. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A novel and fully scalable Agrobacterium spray-based process for manufacturing cellulases and other cost-sensitive proteins in plants.

Science.gov (United States)

Hahn, Simone; Giritch, Anatoli; Bartels, Doreen; Bortesi, Luisa; Gleba, Yuri

2015-06-01

Transient transfection of plants by vacuum infiltration of Agrobacterium vectors represents the state of the art in plant-based protein manufacturing; however, the complexity and cost of this approach restrict it to pharmaceutical proteins. We demonstrated that simple spraying of Nicotiana plants with Agrobacterium vectors in the presence of a surfactant can substitute for vacuum inoculation. When the T-DNA of Agrobacterium encodes viral replicons capable of cell-to-cell movement, up to 90% of the leaf cells can be transfected and express a recombinant protein at levels up to 50% of total soluble protein. This simple, fast and indefinitely scalable process was successfully applied to produce cellulases, one of the most volume- and cost-sensitive biotechnology products. We demonstrate here for the first time that representatives of all hydrolase classes necessary for cellulosic biomass decomposition can be expressed at high levels, stored as silage without significant loss of activity and then used directly as enzyme additives. This process enables production of cellulases, and other potential high-volume products such as noncaloric sweetener thaumatin and antiviral protein griffithsin, at commodity agricultural prices and could find broad applicability in the large-scale production of many other cost-sensitive proteins. © 2014 Society for Experimental Biology, Association of Applied Biologists and John Wiley & Sons Ltd.

Interface state density evaluation of high quality hetero-epitaxial 3C–SiC(0 0 1) for high-power MOSFET applications

Energy Technology Data Exchange (ETDEWEB)

Anzalone, R., E-mail: ruggero.anzalone@imm.cnr.it; Privitera, S.; Camarda, M.; Alberti, A.; Mannino, G.; Fiorenza, P.; Di Franco, S.; La Via, F.

2015-08-15

Graphical abstract: Figure shows the normalized capacitance (C/C{sub OX}) versus voltage (V) for the MOS capacitors on 3 μm, 7 μm thick 3C–SiC films and silicon (as reference), respectively. The shift of the curve respect to the reference is due to the presence of fixed and/or trapped charge in the oxide and interface trapped charge, due to the presence of interface states of density D{sub it}, located at the semiconductor/oxide interface. - Highlights: • We analyzed the flat-band voltage shift for different semiconductor epi-thickness. • The interface state density as a function of epi-defects was evaluated. • We observed the relationship between XRD and C–V results. • Epitaxial thickness influence on interface state density was evaluated. - Abstract: The effects of the crystal quality and surface morphology on the electrical properties of MOS capacitors have been studied in devices manufactured on 3C–SiC epitaxial layers grown on silicon (1 0 0) substrate. The interface state density, which represents one of the most important parameters, has been determined through capacitance measurements. A cross-correlation between high resolution X-ray diffraction, AFM analysis and electrical conductance measurements has allowed to determine the relationship between the crystalline quality and the interface state density. A decrease of the interface state density down to about 10{sup 11} cm{sup −2} eV{sup −1} was observed with improving the crystalline quality.

Radical-source molecular beam epitaxy of ZnO-based heterostructures

Energy Technology Data Exchange (ETDEWEB)

Sadofiev, Sergey

2009-10-27

This work focuses on the development of the novel growth approaches for the fabrication of Group II-oxide materials in the form of epitaxial films and heterostructures. It is shown that molecular-beam epitaxial growth far from thermal equilibrium allows one to overcome the standard solubility limit and to alloy ZnO with MgO or CdO in strict wurtzite phase up to mole fractions of several 10 %. In this way, a band-gap range from 2.2 to 4.4 eV can be covered. A clear layer-by-layer growth mode controlled by oscillations in reflection high-energy electron diffraction makes it possible to fabricate atomically smooth heterointerfaces and well-defined quantum well structures exhibiting prominent band-gap related light emission in the whole composition range. On appropriately designed structures, laser action from the ultraviolet down to green wavelengths and up to room temperature is achieved. The properties and potential of the ''state-of-the-art'' materials are discussed in relation to the advantages for their applications in various optoelectronic devices. (orig.)

Power module packaging with double sided planar interconnection and heat exchangers

Science.gov (United States)

Liang, Zhenxian; Marlino, Laura D.; Ning, Puqi; Wang, Fei

2015-05-26

A double sided cooled power module package having a single phase leg topology includes two IGBT and two diode semiconductor dies. Each IGBT die is spaced apart from a diode semiconductor die, forming a switch unit. Two switch units are placed in a planar face-up and face-down configuration. A pair of DBC or other insulated metallic substrates is affixed to each side of the planar phase leg semiconductor dies to form a sandwich structure. Attachment layers are disposed on outer surfaces of the substrates and two heat exchangers are affixed to the substrates by rigid bond layers. The heat exchangers, made of copper or aluminum, have passages for carrying coolant. The power package is manufactured in a two-step assembly and heating process where direct bonds are formed for all bond layers by soldering, sintering, solid diffusion bonding or transient liquid diffusion bonding, with a specially designed jig and fixture.

Epitaxial graphene electronic structure and transport

International Nuclear Information System (INIS)

De Heer, Walt A; Berger, Claire; Wu Xiaosong; Sprinkle, Mike; Hu Yike; Ruan Ming; First, Phillip N; Stroscio, Joseph A; Haddon, Robert; Piot, Benjamin; Faugeras, Clement; Potemski, Marek; Moon, Jeong-Sun

2010-01-01

Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analogue epitaxial graphene amplifiers.

Epitaxial growth of topological insulator Bi{sub 2}Se{sub 3} film on Si(111) with atomically sharp interface

Energy Technology Data Exchange (ETDEWEB)

Bansal, Namrata [Department of Electrical and Computer Engineering, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Kim, Yong Seung [Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of); Edrey, Eliav; Brahlek, Matthew; Horibe, Yoichi [Department of Physics and Astronomy, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Iida, Keiko; Tanimura, Makoto [Research Department, Nissan Arc, Ltd. Yokosuka, Kanagawa 237-0061 (Japan); Li Guohong; Feng Tian; Lee, Hang-Dong; Gustafsson, Torgny; Andrei, Eva [Department of Physics and Astronomy, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Oh, Seongshik, E-mail: ohsean@physics.rutgers.edu [Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Piscataway, NJ 08854 (United States)

2011-10-31

Atomically sharp epitaxial growth of Bi{sub 2}Se{sub 3} films is achieved on Si(111) substrate with molecular beam epitaxy. Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi{sub 2}Se{sub 3} films on Si substrates. With a single-step high temperature growth, second phase clusters are formed at an early stage. On the other hand, with low temperature growth, the film tends to be disordered even in the absence of a second phase. With a low temperature initial growth followed by a high temperature growth, second-phase-free atomically sharp interface is obtained between Bi{sub 2}Se{sub 3} and Si substrate, as verified by reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM) and X-ray diffraction. The lattice constant of Bi{sub 2}Se{sub 3} is observed to relax to its bulk value during the first quintuple layer according to RHEED analysis, implying the absence of strain from the substrate. TEM shows a fully epitaxial structure of Bi{sub 2}Se{sub 3} film down to the first quintuple layer without any second phase or an amorphous layer.

Epitaxial silicon semiconductor detectors, past developments, future prospects

International Nuclear Information System (INIS)

Gruhn, C.R.

1976-01-01

A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized

Epitaxial Growth of Two-Dimensional Layered Transition-Metal Dichalcogenides: Growth Mechanism, Controllability, and Scalability

KAUST Repository

Li, Henan

2017-07-06

Recently there have been many research breakthroughs in two-dimensional (2D) materials including graphene, boron nitride (h-BN), black phosphors (BPs), and transition-metal dichalcogenides (TMDCs). The unique electrical, optical, and thermal properties in 2D materials are associated with their strictly defined low dimensionalities. These materials provide a wide range of basic building blocks for next-generation electronics. The chemical vapor deposition (CVD) technique has shown great promise to generate high-quality TMDC layers with scalable size, controllable thickness, and excellent electronic properties suitable for both technological applications and fundamental sciences. The capability to precisely engineer 2D materials by chemical approaches has also given rise to fascinating new physics, which could lead to exciting new applications. In this Review, we introduce the latest development of TMDC synthesis by CVD approaches and provide further insight for the controllable and reliable synthesis of atomically thin TMDCs. Understanding of the vapor-phase growth mechanism of 2D TMDCs could benefit the formation of complicated heterostructures and novel artificial 2D lattices.

Epitaxial rare-earth superlattices and films

International Nuclear Information System (INIS)

Salamon, M.B.; Beach, R.S.; Flynn, C.P.; Matheny, A.; Tsui, F.; Rhyne, J.J.

1992-01-01

This paper reports on epitaxial growth of rare-earth superlattices which is demonstrated to have opened important new areas of research on magnetic materials. The propagation magnetic order through non-magnetic elements, including its range and anisotropy, has been studied. The importance of magnetostriction in determining the phase diagram is demonstrated by the changes induced by epitaxial clamping. The cyrstallinity of epitaxial superlattices provides the opportunity to study interfacial magnetism by conventional x-ray and neutron scattering methods

A Scalable Route to Nanoporous Large-Area Atomically Thin Graphene Membranes by Roll-to-Roll Chemical Vapor Deposition and Polymer Support Casting.

Science.gov (United States)

Kidambi, Piran R; Mariappan, Dhanushkodi D; Dee, Nicholas T; Vyatskikh, Andrey; Zhang, Sui; Karnik, Rohit; Hart, A John

2018-03-28

Scalable, cost-effective synthesis and integration of graphene is imperative to realize large-area applications such as nanoporous atomically thin membranes (NATMs). Here, we report a scalable route to the production of NATMs via high-speed, continuous synthesis of large-area graphene by roll-to-roll chemical vapor deposition (CVD), combined with casting of a hierarchically porous polymer support. To begin, we designed and built a two zone roll-to-roll graphene CVD reactor, which sequentially exposes the moving foil substrate to annealing and growth atmospheres, with a sharp, isothermal transition between the zones. The configurational flexibility of the reactor design allows for a detailed evaluation of key parameters affecting graphene quality and trade-offs to be considered for high-rate roll-to-roll graphene manufacturing. With this system, we achieve synthesis of uniform high-quality monolayer graphene ( I D / I G casting and postprocessing, show size-selective molecular transport with performance comparable to that of membranes made from conventionally synthesized graphene. Therefore, this work establishes the feasibility of a scalable manufacturing process of NATMs, for applications including protein desalting and small-molecule separations.

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication.

Science.gov (United States)

Habibpour, Omid; He, Zhongxia Simon; Strupinski, Wlodek; Rorsman, Niklas; Zirath, Herbert

2017-02-01

In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80-100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes.

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

Science.gov (United States)

Habibpour, Omid; He, Zhongxia Simon; Strupinski, Wlodek; Rorsman, Niklas; Zirath, Herbert

2017-02-01

In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80-100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes.

A scalable system for production of functional pancreatic progenitors from human embryonic stem cells.

Directory of Open Access Journals (Sweden)

Thomas C Schulz

Full Text Available Development of a human embryonic stem cell (hESC-based therapy for type 1 diabetes will require the translation of proof-of-principle concepts into a scalable, controlled, and regulated cell manufacturing process. We have previously demonstrated that hESC can be directed to differentiate into pancreatic progenitors that mature into functional glucose-responsive, insulin-secreting cells in vivo. In this study we describe hESC expansion and banking methods and a suspension-based differentiation system, which together underpin an integrated scalable manufacturing process for producing pancreatic progenitors. This system has been optimized for the CyT49 cell line. Accordingly, qualified large-scale single-cell master and working cGMP cell banks of CyT49 have been generated to provide a virtually unlimited starting resource for manufacturing. Upon thaw from these banks, we expanded CyT49 for two weeks in an adherent culture format that achieves 50-100 fold expansion per week. Undifferentiated CyT49 were then aggregated into clusters in dynamic rotational suspension culture, followed by differentiation en masse for two weeks with a four-stage protocol. Numerous scaled differentiation runs generated reproducible and defined population compositions highly enriched for pancreatic cell lineages, as shown by examining mRNA expression at each stage of differentiation and flow cytometry of the final population. Islet-like tissue containing glucose-responsive, insulin-secreting cells was generated upon implantation into mice. By four- to five-months post-engraftment, mature neo-pancreatic tissue was sufficient to protect against streptozotocin (STZ-induced hyperglycemia. In summary, we have developed a tractable manufacturing process for the generation of functional pancreatic progenitors from hESC on a scale amenable to clinical entry.

Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices

International Nuclear Information System (INIS)

Schulze, J.; Oehme, M.; Werner, J.

2012-01-01

A key challenge to obtain a convergence of classical Si-based microelectronics and optoelectronics is the manufacturing of photonic integrated circuits integrable into classical Si-based integrated circuits. This integration would be greatly enhanced if similar facilities and technologies could be used. Therefore one approach is the development of optoelectronic components and devices made from group-IV-based materials such as SiGe, Ge or Ge:Sn. In this paper the optoelectronic performances of a pin diode made from a Ge/Si heterostructure pin layer sequence grown by molecular beam epitaxy are discussed. After a detailed description of the layer sequence growth and the device manufacturing process it will be shown that – depending on the chosen operating point and device design – the diode serves as a broadband high speed photo detector, Franz–Keldysh effect modulator or light emitting diode.

Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices

Energy Technology Data Exchange (ETDEWEB)

Schulze, J., E-mail: schulze@iht.uni-stuttgart.de; Oehme, M.; Werner, J.

2012-02-01

A key challenge to obtain a convergence of classical Si-based microelectronics and optoelectronics is the manufacturing of photonic integrated circuits integrable into classical Si-based integrated circuits. This integration would be greatly enhanced if similar facilities and technologies could be used. Therefore one approach is the development of optoelectronic components and devices made from group-IV-based materials such as SiGe, Ge or Ge:Sn. In this paper the optoelectronic performances of a pin diode made from a Ge/Si heterostructure pin layer sequence grown by molecular beam epitaxy are discussed. After a detailed description of the layer sequence growth and the device manufacturing process it will be shown that - depending on the chosen operating point and device design - the diode serves as a broadband high speed photo detector, Franz-Keldysh effect modulator or light emitting diode.

Bi-epitaxial YBa{sub 2}Cu{sub 3}O{sub x} Thin Films on Tilted-axes NdGaO{sub 3} Substrates with CeO{sub 2} Seeding Layer

Energy Technology Data Exchange (ETDEWEB)

Mozhaev, P B [Institute of Physics and Technology RAS, 117218, Moscow (Russian Federation); Mozhaeva, J E [Institute of Physics and Technology RAS, 117218, Moscow (Russian Federation); Jacobsen, C S [Technical University of Denmark, Physics Department, Lyngby, DK-2800, Denmark (Denmark); Hansen, J Bindslev [Technical University of Denmark, Physics Department, Lyngby, DK-2800, Denmark (Denmark); Bdikin, I K [CICECO, University of Aveiro, Aveiro, 3810-193 (Portugal); Luzanov, V A [Institute of Radio Engineering and Electronics, Moscow, 125009 (Russian Federation); Kotelyanskii, I M [Institute of Radio Engineering and Electronics, Moscow, 125009 (Russian Federation); Zybtsev, S G [Institute of Radio Engineering and Electronics, Moscow, 125009 (Russian Federation)

2006-06-01

Bi-epitaxial YBa{sub 2}Cu{sub 3}O{sub x} (YBCO) thin films with out-of-plane tilt angle in the range 18 - 27{sup 0} were manufactured using pulsed laser deposition on NdGaO{sub 3} tilted-axes substrates with CeO{sub 2} seeding layers. The YBCO thin film orientation over the seeding layer depended on deposition conditions. Removal of the seeding layer from part of the substrate surface by ionbeam etching resulted in formation of a bi-epitaxial thin film with different c-axis orientation of two parts of the film. The bi-epitaxial film orientation and structure were studied using X-ray diffraction techniques, and surface morphology was observed with atomic force microscope (AFM). Photolithography and ion-beam etching techniques were used for patterning bi-epitaxial thin films. Electrical characterization of the obtained structures was performed.

Lateral epitaxial overgrowth of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy

International Nuclear Information System (INIS)

Wang, Yongjin; Hu, Fangren; Hane, Kazuhiro

2011-01-01

We report here the lateral epitaxial overgrowth (LEO) of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy (MBE) growth with radio frequency nitrogen plasma as a gas source. Two kinds of GaN nanostructures are defined by electron beam lithography and realized on a GaN substrate by fast atom beam etching. The epitaxial growth of GaN by MBE is performed on the prepared GaN template, and the selective growth of GaN takes place with the assistance of GaN nanostructures. The LEO of GaN produces novel GaN epitaxial structures which are dependent on the shape and the size of the processed GaN nanostructures. Periodic GaN hexagonal pyramids are generated inside the air holes, and GaN epitaxial strips with triangular section are formed in the grating region. This work provides a promising way for producing novel GaN-based devices by the LEO of GaN using the MBE technique

Magnetic state controllable critical temperature in epitaxial Ho/Nb bilayers

Directory of Open Access Journals (Sweden)

Yuanzhou Gu

2014-04-01

Full Text Available We study the magnetic properties of Ho thin films with different crystallinity (either epitaxial or non-epitaxial and investigate their proximity effects with Nb thin films. Magnetic measurements show that epitaxial Ho has large anisotropy in two different crystal directions in contrast to non-epitaxial Ho. Transport measurements show that the superconducting transition temperature (Tc of Nb thin films can be significantly suppressed at zero field by epitaxial Ho compared with non-epitaxial Ho. We also demonstrate a direct control over Tc by changing the magnetic states of the epitaxial Ho layer, and attribute the strong proximity effects to exchange interaction.

Low Cost Lithography Tool for High Brightness LED Manufacturing

Energy Technology Data Exchange (ETDEWEB)

Andrew Hawryluk; Emily True

2012-06-30

The objective of this activity was to address the need for improved manufacturing tools for LEDs. Improvements include lower cost (both capital equipment cost reductions and cost-ofownership reductions), better automation and better yields. To meet the DOE objective of $1- 2/kilolumen, it will be necessary to develop these highly automated manufacturing tools. Lithography is used extensively in the fabrication of high-brightness LEDs, but the tools used to date are not scalable to high-volume manufacturing. This activity addressed the LED lithography process. During R&D and low volume manufacturing, most LED companies use contact-printers. However, several industries have shown that these printers are incompatible with high volume manufacturing and the LED industry needs to evolve to projection steppers. The need for projection lithography tools for LED manufacturing is identified in the Solid State Lighting Manufacturing Roadmap Draft, June 2009. The Roadmap states that Projection tools are needed by 2011. This work will modify a stepper, originally designed for semiconductor manufacturing, for use in LED manufacturing. This work addresses improvements to yield, material handling, automation and throughput for LED manufacturing while reducing the capital equipment cost.

Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

Science.gov (United States)

Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Lafond, D.; Damlencourt, J. F.; Morvan, S.; Prévitali, B.; Andrieu, F.; Loubet, N.; Dutartre, D.

2013-05-01

We have evaluated various Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes in order to grow "mushroom-free" Si and SiGe:B Raised Sources and Drains (RSDs) on each side of ultra-short gate length Extra-Thin Silicon-On-Insulator (ET-SOI) transistors. The 750 °C, 20 Torr Si CSEGE process we have developed (5 chlorinated growth steps with four HCl etch steps in-between) yielded excellent crystalline quality, typically 18 nm thick Si RSDs. Growth was conformal along the Si3N4 sidewall spacers, without any poly-Si mushrooms on top of unprotected gates. We have then evaluated on blanket 300 mm Si(001) wafers the feasibility of a 650 °C, 20 Torr SiGe:B CSEGE process (5 chlorinated growth steps with four HCl etch steps in-between, as for Si). As expected, the deposited thickness decreased as the total HCl etch time increased. This came hands in hands with unforeseen (i) decrease of the mean Ge concentration (from 30% down to 26%) and (ii) increase of the substitutional B concentration (from 2 × 1020 cm-3 up to 3 × 1020 cm-3). They were due to fluctuations of the Ge concentration and of the atomic B concentration [B] in such layers (drop of the Ge% and increase of [B] at etch step locations). Such blanket layers were a bit rougher than layers grown using a single epitaxy step, but nevertheless of excellent crystalline quality. Transposition of our CSEGE process on patterned ET-SOI wafers did not yield the expected results. HCl etch steps indeed helped in partly or totally removing the poly-SiGe:B mushrooms on top of the gates. This was however at the expense of the crystalline quality and 2D nature of the ˜45 nm thick Si0.7Ge0.3:B recessed sources and drains selectively grown on each side of the imperfectly protected poly-Si gates. The only solution we have so far identified that yields a lesser amount of mushrooms while preserving the quality of the S/D is to increase the HCl flow during growth steps.

Epitaxial growth of rhenium with sputtering

Energy Technology Data Exchange (ETDEWEB)

Oh, Seongshik [National Institute of Standards and Technology, Boulder, CO 80305 (United States) and Department of Physics, University of Illinois, Urbana, IL 61801 (United States)]. E-mail: soh@boulder.nist.gov; Hite, Dustin A. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Cicak, K. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Osborn, Kevin D. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Simmonds, Raymond W. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, Robert [University of California, Santa Barbara, CA 93106 (United States); Cooper, Ken B. [University of California, Santa Barbara, CA 93106 (United States); Steffen, Matthias [University of California, Santa Barbara, CA 93106 (United States); Martinis, John M. [University of California, Santa Barbara, CA 93106 (United States); Pappas, David P. [National Institute of Standards and Technology, Boulder, CO 80305 (United States)

2006-02-21

We have grown epitaxial Rhenium (Re) (0001) films on {alpha}-Al{sub 2}O{sub 3} (0001) substrates using sputter deposition in an ultra high vacuum system. We find that better epitaxy is achieved with DC rather than with RF sputtering. With DC sputtering, epitaxy is obtained with the substrate temperatures above 700 deg. C and deposition rates below 0.1 nm/s. The epitaxial Re films are typically composed of terraced hexagonal islands with screw dislocations, and island size gets larger with high temperature post-deposition annealing. The growth starts in a three dimensional mode but transforms into two dimensional mode as the film gets thicker. With a thin ({approx}2 nm) seed layer deposited at room temperature and annealed at a high temperature, the initial three dimensional growth can be suppressed. This results in larger islands when a thick film is grown at 850 deg. C on the seed layer. We also find that when a room temperature deposited Re film is annealed to higher temperatures, epitaxial features start to show up above {approx}600 deg. C, but the film tends to be disordered.

Numeric Analysis for Relationship-Aware Scalable Streaming Scheme

Directory of Open Access Journals (Sweden)

Heung Ki Lee

2014-01-01

Full Text Available Frequent packet loss of media data is a critical problem that degrades the quality of streaming services over mobile networks. Packet loss invalidates frames containing lost packets and other related frames at the same time. Indirect loss caused by losing packets decreases the quality of streaming. A scalable streaming service can decrease the amount of dropped multimedia resulting from a single packet loss. Content providers typically divide one large media stream into several layers through a scalable streaming service and then provide each scalable layer to the user depending on the mobile network. Also, a scalable streaming service makes it possible to decode partial multimedia data depending on the relationship between frames and layers. Therefore, a scalable streaming service provides a way to decrease the wasted multimedia data when one packet is lost. However, the hierarchical structure between frames and layers of scalable streams determines the service quality of the scalable streaming service. Even if whole packets of layers are transmitted successfully, they cannot be decoded as a result of the absence of reference frames and layers. Therefore, the complicated relationship between frames and layers in a scalable stream increases the volume of abandoned layers. For providing a high-quality scalable streaming service, we choose a proper relationship between scalable layers as well as the amount of transmitted multimedia data depending on the network situation. We prove that a simple scalable scheme outperforms a complicated scheme in an error-prone network. We suggest an adaptive set-top box (AdaptiveSTB to lower the dependency between scalable layers in a scalable stream. Also, we provide a numerical model to obtain the indirect loss of multimedia data and apply it to various multimedia streams. Our AdaptiveSTB enhances the quality of a scalable streaming service by removing indirect loss.

RESONANT STEP-DOWN DC-DC POWER CONVERTERS

DEFF Research Database (Denmark)

2015-01-01

The present invention relates to a resonant step-down DC-DC power converter which comprises a primary side circuit and a secondary side circuit coupled through a galvanic isolation barrier. The primary side circuit comprises a positive and a negative input terminal for receipt of an input voltage...... charged from the input voltage and discharged to the output capacitor through the galvanic isolation barrier by a semiconductor switch arrangement in accordance with a switch control signal to produce the converter output voltage. The resonant step-down DC-DC power converter comprises an electrical short......-circuit connection across the galvanic isolation barrier connecting, in a first case, the second negative electrode of the output capacitor to the positive input terminal of the primary side circuit or, in a second case, connecting the second positive electrode of the output capacitor to the negative input terminal...

Scalable coherent interface

International Nuclear Information System (INIS)

Alnaes, K.; Kristiansen, E.H.; Gustavson, D.B.; James, D.V.

1990-01-01

The Scalable Coherent Interface (IEEE P1596) is establishing an interface standard for very high performance multiprocessors, supporting a cache-coherent-memory model scalable to systems with up to 64K nodes. This Scalable Coherent Interface (SCI) will supply a peak bandwidth per node of 1 GigaByte/second. The SCI standard should facilitate assembly of processor, memory, I/O and bus bridge cards from multiple vendors into massively parallel systems with throughput far above what is possible today. The SCI standard encompasses two levels of interface, a physical level and a logical level. The physical level specifies electrical, mechanical and thermal characteristics of connectors and cards that meet the standard. The logical level describes the address space, data transfer protocols, cache coherence mechanisms, synchronization primitives and error recovery. In this paper we address logical level issues such as packet formats, packet transmission, transaction handshake, flow control, and cache coherence. 11 refs., 10 figs

Position-controlled epitaxial III-V nanowires on silicon

NARCIS (Netherlands)

Roest, A.L.; Verheijen, M.A.; Wunnicke, O.; Serafin, S.N.; Wondergem, H.J.; Bakkers, E.P.A.M.

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction

Epitaxial growth of silicon for layer transfer

Science.gov (United States)

Teplin, Charles; Branz, Howard M

2015-03-24

Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

The DarkSide experiment

International Nuclear Information System (INIS)

Bottino, B.; Aalseth, C.E.; Acconcia, G.

2017-01-01

DarkSide is a dark matter direct search experiment at Laboratori Nazionali del Gran Sasso (LNGS). DarkSide is based on the detection of rare nuclear recoils possibly induced by hypothetical dark matter particles, which are supposed to be neutral, massive (m > 10 GeV) and weakly interactive (Wimp). The dark matter detector is a two-phase time projection chamber (TPC) filled with ultra-pure liquid argon. The TPC is placed inside a muon and a neutron active vetoes to suppress the background. Using argon as active target has many advantages, the key features are the strong discriminant power between nuclear and electron recoils, the spatial reconstruction and easy scalability to multi-tons size. At the moment DarkSide-50 is filled with ultra-pure argon, extracted from underground sources, and from April 2015 it is taking data in its final configuration. When combined with the preceding search with an atmospheric argon target, it is possible to set a 90% CL upper limit on the WIMP-nucleon spin-independent cross section of 2.0×10"−"44 cm"2 for a WIMP mass of 100 GeV/c"2. The next phase of the experiment, DarkSide-20k, will be the construction of a new detector with an active mass of ∼ 20 tons.

Twenty years of molecular beam epitaxy

Science.gov (United States)

Cho, A. Y.

1995-05-01

The term "molecular beam epitaxy" (MBE) was first used in one of our crystal growth papers in 1970, after having conducted extensive surface physics studies in the late 1960's of the interaction of atomic and molecular beams with solid surfaces. The unique feature of MBE is the ability to prepare single crystal layers with atomic dimensional precision. MBE sets the standard for epitaxial growth and has made possible semiconductor structures that could not be fabricated with either naturally existing materials or by other crystal growth techniques. MBE led the crystal growth technologies when it prepared the first semiconductor quantum well and superlattice structures that gave unexpected and exciting electrical and optical properties. For example, the discovery of the fractional quantized Hall effect. It brought experimental quantum physics to the classroom, and practically all major universities throughout the world are now equipped with MBE systems. The fundamental principles demonstrated by the MBE growth of III-V compound semiconductors have also been applied to the growth of group IV, II-VI, metal, and insulating materials. For manufacturing, the most important criteria are uniformity, precise control of the device structure, and reproducibility. MBE has produced more lasers (3 to 5 million per month for compact disc application) than any other crystal growth technique in the world. New directions for MBE are to incorporate in-situ, real-time monitoring capabilities so that complex structures can be precisely "engineered". In the future, as environmental concerns increase, the use of toxic arsine and phosphine may be limited. Successful use of valved cracker cells for solid arsenic and phosphorus has already produced InP based injection lasers.

Scalable photoreactor for hydrogen production

KAUST Repository

Takanabe, Kazuhiro; Shinagawa, Tatsuya

2017-01-01

Provided herein are scalable photoreactors that can include a membrane-free water- splitting electrolyzer and systems that can include a plurality of membrane-free water- splitting electrolyzers. Also provided herein are methods of using the scalable photoreactors provided herein.

Scalable photoreactor for hydrogen production

KAUST Repository

Takanabe, Kazuhiro

2017-04-06

Provided herein are scalable photoreactors that can include a membrane-free water- splitting electrolyzer and systems that can include a plurality of membrane-free water- splitting electrolyzers. Also provided herein are methods of using the scalable photoreactors provided herein.

Anisotropic electrical properties of epitaxial Yba2Cu3O7-gd films on (110) SrTiO3

International Nuclear Information System (INIS)

Gupta, A.; Koren, G.; Baseman, R.J.; Segmuller, A.; Holber, W.

1989-01-01

Epitaxial thin films of YBa 2 Cu 3 O 7 - δ were deposited on (110) SrTiO 3 at 600 degrees C in the presence of atomic oxygen using the laser ablation technique. X-ray diffraction patterns in the standard Bragg and grazing incidence modes show epitaxial growth of the films with their c-axis and axis parallel to the and directions in the plane of the substrate, respectively. Superconductivity with T c (R = ) = 82 K was found along the direction in the basal plane, whereas finite resistivity down to 5 k was observed along the c-axis direction. The authors maintain that these preliminary results suggest that YBa 2 Cu 3 O 7 - δ behaves like a true two-dimensional superconductor

Magnetic structural effect (MSE in epitaxial films of cerium oxide and lanthanum zirconate

Directory of Open Access Journals (Sweden)

Fatima Kh. Chibirova

2015-06-01

Full Text Available Increasing the critical current density in the second generation high-temperature superconducting wires (2G HTS is the major challenge for researchers and manufacturers of 2G HTS wires all over the world. We proposed a new approach to increase the number of percolation paths for supercurrent, i.e. increasing the number of low angle grain boundaries (<5° in the epitaxial superconducting YBCO layer by magnetic structural processing (MSP of buffer layers. New experimental results have been presented on the application of MSP for improving the structure and increasing the texture sharpness of buffer in electrical conducting element of 2G HTS wire. The influence of MCO on the structural and textural properties has been investigated in a buffer consisting of epitaxial films of cerium oxide CeO2 and lanthanum zirconate La2Zr2O7 in the CeO2/4La2Zr2O7 architecture. The influence of the magnetic processing of the epitaxial La2Zr2O7 buffer film on the shape of grains has been found. An atomic force microscopical study has shown that after magnetic processing the shape of grains improved significantly. A multilayer CeO2/4La2Zr2O7 buffer each layer of which was processed in a magnetic field has a high degree of orientation: only one diffraction peak with (200 indexes is observed in the X-ray spectrum. The X-ray settings of the (200 diffraction peak indicate a well developed epitaxial structure of CeO2 and La2Zr2O7 layers. The texture of the buffer is by more than 2° sharper than that of the Ni–5 at% W substrate.

Resource-aware complexity scalability for mobile MPEG encoding

NARCIS (Netherlands)

Mietens, S.O.; With, de P.H.N.; Hentschel, C.; Panchanatan, S.; Vasudev, B.

2004-01-01

Complexity scalability attempts to scale the required resources of an algorithm with the chose quality settings, in order to broaden the application range. In this paper, we present complexity-scalable MPEG encoding of which the core processing modules are modified for scalability. Scalability is

An Overview of Cloud Implementation in the Manufacturing Process Life Cycle

Science.gov (United States)

Kassim, Noordiana; Yusof, Yusri; Hakim Mohamad, Mahmod Abd; Omar, Abdul Halim; Roslan, Rosfuzah; Aryanie Bahrudin, Ida; Ali, Mohd Hatta Mohamed

2017-08-01

The advancement of information and communication technology (ICT) has changed the structure and functions of various sectors and it has also started to play a significant role in modern manufacturing in terms of computerized machining and cloud manufacturing. It is important for industries to keep up with the current trend of ICT for them to be able survive and be competitive. Cloud manufacturing is an approach that wanted to realize a real-world manufacturing processes that will apply the basic concept from the field of Cloud computing to the manufacturing domain called Cloud-based manufacturing (CBM) or cloud manufacturing (CM). Cloud manufacturing has been recognized as a new paradigm for manufacturing businesses. In cloud manufacturing, manufacturing companies need to support flexible and scalable business processes in the shop floor as well as the software itself. This paper provides an insight or overview on the implementation of cloud manufacturing in the modern manufacturing processes and at the same times analyses the requirements needed regarding process enactment for Cloud manufacturing and at the same time proposing a STEP-NC concept that can function as a tool to support the cloud manufacturing concept.

A highly scalable peptide-based assay system for proteomics.

Directory of Open Access Journals (Sweden)

Igor A Kozlov

Full Text Available We report a scalable and cost-effective technology for generating and screening high-complexity customizable peptide sets. The peptides are made as peptide-cDNA fusions by in vitro transcription/translation from pools of DNA templates generated by microarray-based synthesis. This approach enables large custom sets of peptides to be designed in silico, manufactured cost-effectively in parallel, and assayed efficiently in a multiplexed fashion. The utility of our peptide-cDNA fusion pools was demonstrated in two activity-based assays designed to discover protease and kinase substrates. In the protease assay, cleaved peptide substrates were separated from uncleaved and identified by digital sequencing of their cognate cDNAs. We screened the 3,011 amino acid HCV proteome for susceptibility to cleavage by the HCV NS3/4A protease and identified all 3 known trans cleavage sites with high specificity. In the kinase assay, peptide substrates phosphorylated by tyrosine kinases were captured and identified by sequencing of their cDNAs. We screened a pool of 3,243 peptides against Abl kinase and showed that phosphorylation events detected were specific and consistent with the known substrate preferences of Abl kinase. Our approach is scalable and adaptable to other protein-based assays.

One-step Ge/Si epitaxial growth.

Science.gov (United States)

Wu, Hung-Chi; Lin, Bi-Hsuan; Chen, Huang-Chin; Chen, Po-Chin; Sheu, Hwo-Shuenn; Lin, I-Nan; Chiu, Hsin-Tien; Lee, Chi-Young

2011-07-01

Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.

Scalable Production of Graphene-Based Wearable E-Textiles.

Science.gov (United States)

Karim, Nazmul; Afroj, Shaila; Tan, Sirui; He, Pei; Fernando, Anura; Carr, Chris; Novoselov, Kostya S

2017-12-26

Graphene-based wearable e-textiles are considered to be promising due to their advantages over traditional metal-based technology. However, the manufacturing process is complex and currently not suitable for industrial scale application. Here we report a simple, scalable, and cost-effective method of producing graphene-based wearable e-textiles through the chemical reduction of graphene oxide (GO) to make stable reduced graphene oxide (rGO) dispersion which can then be applied to the textile fabric using a simple pad-dry technique. This application method allows the potential manufacture of conductive graphene e-textiles at commercial production rates of ∼150 m/min. The graphene e-textile materials produced are durable and washable with acceptable softness/hand feel. The rGO coating enhanced the tensile strength of cotton fabric and also the flexibility due to the increase in strain% at maximum load. We demonstrate the potential application of these graphene e-textiles for wearable electronics with activity monitoring sensor. This could potentially lead to a multifunctional single graphene e-textile garment that can act both as sensors and flexible heating elements powered by the energy stored in graphene textile supercapacitors.

New approach for sustaining energetic, efficient and scalable non-equilibrium plasma in water vapours at atmospheric pressure

International Nuclear Information System (INIS)

Malik, Muhammad Arif; Schoenbach, Karl H

2012-01-01

Energetic and scalable non-equilibrium plasma was formed in pure water vapour at atmospheric pressure between wire-to-strip electrodes on a dielectric surface with one of the electrodes extended forming a conductive plane on the back side of the dielectric surface. The energy deposition increased by an order of magnitude compared with the conventional pulsed corona discharges under the same conditions. The scalability was demonstrated by operating two electrode assemblies with a common conductive plane between two dielectric layers. The energy yields for hydrogen and hydrogen peroxide generation were measured as ∼1.2 g H 2 /kWh and ∼4 g H 2 O 2 /kWh. (fast track communication)

Manufacturing Demonstration Facility: Low Temperature Materials Synthesis

International Nuclear Information System (INIS)

Graham, David E.; Moon, Ji-Won; Armstrong, Beth L.; Datskos, Panos G.; Duty, Chad E.; Gresback, Ryan; Ivanov, Ilia N.; Jacobs, Christopher B.; Jellison, Gerald Earle; Jang, Gyoung Gug; Joshi, Pooran C.; Jung, Hyunsung; Meyer, Harry M.; Phelps, Tommy

2015-01-01

The Manufacturing Demonstration Facility (MDF) low temperature materials synthesis project was established to demonstrate a scalable and sustainable process to produce nanoparticles (NPs) for advanced manufacturing. Previous methods to chemically synthesize NPs typically required expensive, high-purity inorganic chemical reagents, organic solvents and high temperatures. These processes were typically applied at small laboratory scales at yields sufficient for NP characterization, but insufficient to support roll-to-roll processing efforts or device fabrication. The new NanoFermentation processes described here operated at a low temperature (~60 C) in low-cost, aqueous media using bacteria that produce extracellular NPs with controlled size and elemental stoichiometry. Up-scaling activities successfully demonstrated high NP yields and quality in a 900-L pilot-scale reactor, establishing this NanoFermentation process as a competitive biomanufacturing strategy to produce NPs for advanced manufacturing of power electronics, solid-state lighting and sensors.

Manufacturing Demonstration Facility: Low Temperature Materials Synthesis

Energy Technology Data Exchange (ETDEWEB)

Graham, David E. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Moon, Ji-Won [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Armstrong, Beth L. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Datskos, Panos G. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Duty, Chad E. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Gresback, Ryan [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Ivanov, Ilia N. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Jacobs, Christopher B. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Jellison, Gerald Earle [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Jang, Gyoung Gug [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Joshi, Pooran C. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Jung, Hyunsung [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Meyer, III, Harry M. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Phelps, Tommy [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2015-06-30

The Manufacturing Demonstration Facility (MDF) low temperature materials synthesis project was established to demonstrate a scalable and sustainable process to produce nanoparticles (NPs) for advanced manufacturing. Previous methods to chemically synthesize NPs typically required expensive, high-purity inorganic chemical reagents, organic solvents and high temperatures. These processes were typically applied at small laboratory scales at yields sufficient for NP characterization, but insufficient to support roll-to-roll processing efforts or device fabrication. The new NanoFermentation processes described here operated at a low temperature (~60 C) in low-cost, aqueous media using bacteria that produce extracellular NPs with controlled size and elemental stoichiometry. Up-scaling activities successfully demonstrated high NP yields and quality in a 900-L pilot-scale reactor, establishing this NanoFermentation process as a competitive biomanufacturing strategy to produce NPs for advanced manufacturing of power electronics, solid-state lighting and sensors.

Self-planarized quantum-disks nanowires ultraviolet-B emitter utilizing pendeo-epitaxy

KAUST Repository

Janjua, Bilal

2017-03-03

The growth of self-assembled, vertically oriented and uniform nanowires (NWs) has remained a challenge for efficient light-emitting devices. Here, we demonstrate dislocation-free AlGaN NWs with spontaneous coalescence, which are grown by plasma-assisted molecular beam epitaxy on an n-type doped silicon (100) substrate. A high density of NWs (filling factor > 95%) was achieved under optimized growth conditions, enabling device fabrication without planarization using ultraviolet (UV)-absorbing polymer materials. UV-B (280-320 nm) light-emitting diodes (LEDs), which emit at ~303 nm with a narrow full width at half maximum (FWHM) (~20 nm) of the emission spectrum, are demonstrated using a large active region (“active region/NW length-ratio” ~ 50%) embedded with 15 stacks of AlxGa1-xN/AlyGa1-yN quantum-disks (Qdisks). To improve the carrier injection, a graded layer is introduced at the AlGaN/GaN interfaces on both p- and n-type regions. This work demonstrates a viable approach to easily fabricate ultra-thin, efficient UV optoelectronic devices on low-cost and scalable silicon substrates.

Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates

Science.gov (United States)

Anderson, Travis J.; Koehler, Andrew D.; Tadjer, Marko J.; Hite, Jennifer K.; Nath, Anindya; Mahadik, Nadeemullah A.; Aktas, Ozgur; Odnoblyudov, Vladimir; Basceri, Cem; Hobart, Karl D.; Kub, Francis J.

2017-12-01

AlGaN/GaN high-electron-mobility transistor (HEMT) device layers were grown by metal organic chemical vapor deposition (MOCVD) on commercial engineered QST™ substrates to demonstrate a path to scalable, cost-effective foundry processing while supporting the thick epitaxial layers required for power HEMT structures. HEMT structures on 150 mm Si substrates were also evaluated. The HEMTs on engineered substrates exhibited material quality, DC performance, and forward blocking performance superior to those of the HEMT on Si. GaN device layers up to 15 µm were demonstrated with a wafer bow of 1 µm, representing the thickest films grown on 150-mm-diameter substrates with low bow to date.

Development of a scalable suspension culture for cardiac differentiation from human pluripotent stem cells

Directory of Open Access Journals (Sweden)

Vincent C. Chen

2015-09-01

Full Text Available To meet the need of a large quantity of hPSC-derived cardiomyocytes (CM for pre-clinical and clinical studies, a robust and scalable differentiation system for CM production is essential. With a human pluripotent stem cells (hPSC aggregate suspension culture system we established previously, we developed a matrix-free, scalable, and GMP-compliant process for directing hPSC differentiation to CM in suspension culture by modulating Wnt pathways with small molecules. By optimizing critical process parameters including: cell aggregate size, small molecule concentrations, induction timing, and agitation rate, we were able to consistently differentiate hPSCs to >90% CM purity with an average yield of 1.5 to 2 × 109 CM/L at scales up to 1 L spinner flasks. CM generated from the suspension culture displayed typical genetic, morphological, and electrophysiological cardiac cell characteristics. This suspension culture system allows seamless transition from hPSC expansion to CM differentiation in a continuous suspension culture. It not only provides a cost and labor effective scalable process for large scale CM production, but also provides a bioreactor prototype for automation of cell manufacturing, which will accelerate the advance of hPSC research towards therapeutic applications.

Foxconned Labour as the Dark Side of the Information Age: Working Conditions at Apple’s Contract Manufacturers in China.

Directory of Open Access Journals (Sweden)

Marisol Sandoval

2013-07-01

Full Text Available Apple is one of the most dominant and most admired computer companies in the world. But hidden behind the clean surface of Apple’s advanced gadgets lies a dirty world of work. This paper focuses on the dark side of the information age by looking at working conditions in the workshops of Apple’s contract manufacturers in China. For this purpose I suggest a systematic model of working conditions that can be used for assessing and comparing work in different industries. Departing from Karl Marx’s circuit of capital it identifies elements that shape working conditions throughout the capital accumulation process including productive forces, relations of production, the production process, products, and labour legislation. Subsequently I apply this model to the realm of electronics manufacturing. Based on research conducted by corporate watchdogs this paper provides detailed insights into the work and life reality of workers in Apple’s first tier supplier factories. An analysis of Apple’s response to labour rights allegations furthermore reveals three ideological patterns that rather obscure existing problems than offering viable solutions.

Thermally induced texture flip in semiconducting polymer stabilized by epitaxial relationship

Science.gov (United States)

O'Hara, Kathryn A.; Pokuri, Balaji S. S.; Takacs, Christopher J.; Beaujuge, Pierre M.; Ganapathysubramanian, Baskar; Chabinyc, Michael L.

The morphology of semiconducting polymer films has a large effect on the charge transport properties. Charges can move easily along the conjugated backbone and in the pi-pi stacking direction. However, transport through the film is determined by the connectivity between domains, which is not well understood. We previously observed quadrites in the polymer, PSBTBT, and proposed that the preferential overlap between lamellae may improve connectivity and provide an additional conduction pathway. Now, the presence of quadrites is revealed in another successful donor polymer, PBDTTPD, using high resolution transmission electron microscopy (HRTEM). A study of how side-chain substitution affects the epitaxial crossing is conducted by examining several PBDTTPD derivatives. The stability of the film texture with annealing is also examined as a function of quadrite formation. It has been shown that heating some semicrystalline polymers above the melting temperature and slow cooling can flip the lamellar texture from face-on to edge-on. We hypothesize that the orientation of lamellar crystallites in PBDTTPD films is stabilized by the epitaxial overlap between adjacent crystalline domains. This may have important implications for the electronic transport properties.

A Scalable Framework to Detect Personal Health Mentions on Twitter.

Science.gov (United States)

Yin, Zhijun; Fabbri, Daniel; Rosenbloom, S Trent; Malin, Bradley

2015-06-05

Biomedical research has traditionally been conducted via surveys and the analysis of medical records. However, these resources are limited in their content, such that non-traditional domains (eg, online forums and social media) have an opportunity to supplement the view of an individual's health. The objective of this study was to develop a scalable framework to detect personal health status mentions on Twitter and assess the extent to which such information is disclosed. We collected more than 250 million tweets via the Twitter streaming API over a 2-month period in 2014. The corpus was filtered down to approximately 250,000 tweets, stratified across 34 high-impact health issues, based on guidance from the Medical Expenditure Panel Survey. We created a labeled corpus of several thousand tweets via a survey, administered over Amazon Mechanical Turk, that documents when terms correspond to mentions of personal health issues or an alternative (eg, a metaphor). We engineered a scalable classifier for personal health mentions via feature selection and assessed its potential over the health issues. We further investigated the utility of the tweets by determining the extent to which Twitter users disclose personal health status. Our investigation yielded several notable findings. First, we find that tweets from a small subset of the health issues can train a scalable classifier to detect health mentions. Specifically, training on 2000 tweets from four health issues (cancer, depression, hypertension, and leukemia) yielded a classifier with precision of 0.77 on all 34 health issues. Second, Twitter users disclosed personal health status for all health issues. Notably, personal health status was disclosed over 50% of the time for 11 out of 34 (33%) investigated health issues. Third, the disclosure rate was dependent on the health issue in a statistically significant manner (P<.001). For instance, more than 80% of the tweets about migraines (83/100) and allergies (85

Adaptive format conversion for scalable video coding

Science.gov (United States)

Wan, Wade K.; Lim, Jae S.

2001-12-01

The enhancement layer in many scalable coding algorithms is composed of residual coding information. There is another type of information that can be transmitted instead of (or in addition to) residual coding. Since the encoder has access to the original sequence, it can utilize adaptive format conversion (AFC) to generate the enhancement layer and transmit the different format conversion methods as enhancement data. This paper investigates the use of adaptive format conversion information as enhancement data in scalable video coding. Experimental results are shown for a wide range of base layer qualities and enhancement bitrates to determine when AFC can improve video scalability. Since the parameters needed for AFC are small compared to residual coding, AFC can provide video scalability at low enhancement layer bitrates that are not possible with residual coding. In addition, AFC can also be used in addition to residual coding to improve video scalability at higher enhancement layer bitrates. Adaptive format conversion has not been studied in detail, but many scalable applications may benefit from it. An example of an application that AFC is well-suited for is the migration path for digital television where AFC can provide immediate video scalability as well as assist future migrations.

On eliminating synchronous communication in molecular simulations to improve scalability

Science.gov (United States)

Straatsma, T. P.; Chavarría-Miranda, Daniel G.

2013-12-01

Molecular dynamics simulation, as a complementary tool to experimentation, has become an important methodology for the understanding and design of molecular systems as it provides access to properties that are difficult, impossible or prohibitively expensive to obtain experimentally. Many of the available software packages have been parallelized to take advantage of modern massively concurrent processing resources. The challenge in achieving parallel efficiency is commonly attributed to the fact that molecular dynamics algorithms are communication intensive. This paper illustrates how an appropriately chosen data distribution and asynchronous one-sided communication approach can be used to effectively deal with the data movement within the Global Arrays/ARMCI programming model framework. A new put_notify capability is presented here, allowing the implementation of the molecular dynamics algorithm without any explicit global or local synchronization or global data reduction operations. In addition, this push-data model is shown to very effectively allow hiding data communication behind computation. Rather than data movement or explicit global reductions, the implicit synchronization of the algorithm becomes the primary challenge for scalability. Without any explicit synchronous operations, the scalability of molecular simulations is shown to depend only on the ability to evenly balance computational load.

Experimental investigations of superconductivity in quasi-two-dimensional epitaxial copper oxide superlattices and trilayers

International Nuclear Information System (INIS)

Lowndes, D.H.; Norton, D.P.

1993-01-01

Epitaxial trilayer and superlattice structures grown by pulsed laser ablation have been used to study the superconducting-to-normal transition of ultrathin (one and two c-axis unit cells) YBa 2 Cu 3 O 7-x layers. The normalized flux-flow resistances for several epitaxial structures containing two-cell-thick YBa 2 Cu 3 O 7-x films collapse onto the ''universal'' curve of the Ginzburg-Landau Coulomb Gas (GLCG) model. Analysis of normalized resistance data for a series of superlattices containing one-cell-thick YBa 2 Cu 3 O 7-x layers also is consistent with the behavior expected for quasi-two-dimensional layers in a highly anisotropic, layered three-dimensional superconductor. Current-voltage measurements for one of the trilayer structures also are consistent with the normalized resistance data, and with the GLCG model. Scanning tunneling microscopy, transmission electron microscopy, and electrical transport studies show that growth-related steps in ultrathin YBa 2 Cu 3 O 7-x layers affect electrical continuity over macroscopic distances, acting as weak links. However , the perturbation of the superconducting order parameter can be minimized by utilizing hole-doped buffer and cap layers, on both sides of the YBa 2 Cu 3 O 7-x layer, in trilayers and superlattices. These results demonstrate the usefulness of epitaxial trilayer and superlattice structures as tools for systematic, fundamental studies of high-temperature superconductivity

Organometallic vapor-phase epitaxy theory and practice

CERN Document Server

Stringfellow, Gerald B

1989-01-01

Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the

Growth and characterization of germanium epitaxial film on silicon (001 with germane precursor in metal organic chemical vapour deposition (MOCVD chamber

Directory of Open Access Journals (Sweden)

Kwang Hong Lee

2013-09-01

Full Text Available The quality of germanium (Ge epitaxial film grown directly on a silicon (Si (001 substrate with 6° off-cut using conventional germane precursor in a metal organic chemical vapour deposition (MOCVD system is studied. The growth sequence consists of several steps at low temperature (LT at 400 °C, intermediate temperature ramp (LT-HT of ∼10 °C/min and high temperature (HT at 600 °C. This is followed by post-growth annealing in hydrogen at temperature ranging from 650 to 825 °C. The Ge epitaxial film of thickness ∼ 1 μm experiences thermally induced tensile strain of 0.11 % with a treading dislocation density (TDD of ∼107/cm2 and the root-mean-square (RMS roughness of ∼ 0.75 nm. The benefit of growing Ge epitaxial film using MOCVD is that the subsequent III-V materials can be grown in-situ without the need of breaking the vacuum hence it is manufacturing worthy.

Epitaxial-graphene/graphene-oxide junction: an essential step towards epitaxial graphene electronics.

Science.gov (United States)

Wu, Xiaosong; Sprinkle, Mike; Li, Xuebin; Ming, Fan; Berger, Claire; de Heer, Walt A

2008-07-11

Graphene-oxide (GO) flakes have been deposited to bridge the gap between two epitaxial-graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers at the graphene/graphene-oxide junctions, as a consequence of the band gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 degrees C, implying that the gap can be tuned by changing the degree of oxidation. A lower limit of the GO mobility was found to be 850 cm2/V s, rivaling silicon. In situ local oxidation of patterned epitaxial graphene has been achieved.

Epitaxial lateral overgrowth - a tool for dislocation blockade in multilayer system

International Nuclear Information System (INIS)

Zytkiewicz, Z.R.

1998-01-01

Results on epitaxial lateral overgrowth of GaAs layers are reported. The methods of controlling the growth anisotropy, the effect of substrate defects filtration in epitaxial lateral overgrowth procedure and influence of the mask on properties of epitaxial lateral overgrowth layers will be discussed. The case od GaAs epitaxial lateral overgrowth layers grown by liquid phase epitaxy on heavily dislocated GaAs substrates was chosen as an example to illustrate the processes discussed. The similarities between our results and those reported recently for GaN layers grown laterally by metalorganic vapour phase epitaxy will be underlined. (author)

Preparation and Characterization of Epitaxial VO2 Films on Sapphire Using Postepitaxial Topotaxy Route via Epitaxial V2O3 Films

Science.gov (United States)

Yamaguchi, Iwao; Manabe, Takaaki; Tsuchiya, Tetsuo; Nakajima, Tomohiko; Sohma, Mitsugu; Kumagai, Toshiya

2008-02-01

Epitaxial VO2 films were prepared on the C-planes of α-Al2O3 substrates by a metal organic deposition (MOD) process. It was difficult to obtain the single phase of (010)M-oriented VO2 films, in which the subscript M refers to the monoclinic indices, by the heat treatment of amorphous precursor films in the VO2-stable region after the pyrolysis of the coating solution. The product films consisted of discontinuous circular grains of 1-2 µm size on the substrate surface. Therefore, we prepared the (010)M-oriented epitaxial VO2 films using postepitaxial topotaxy (PET), that is, topotactic oxidation of (0001)-oriented epitaxial V2O3 films. First, epitaxial V2O3(0001) films were obtained by MOD starting with a vanadium naphthenate solution. Second, the epitaxial V2O3(0001) films were topotactically oxidized at 500 °C in an Ar-O2 gas mixture with pO2 = 10-4 atm to obtain (010)M-oriented epitaxial VO2 films. The epitaxial relationships were VO2(010)M ∥ α-Al2O3(0001) and VO2[100]M ∥ α-Al2O3[0110], [1010], [1100]. The VO2(010)M films exhibited metal-semiconductor transitions with hysteresis loops at 60-80 °C. The resistivity change before and after the transition of the VO2(010)M film oxidized for 6 h was three orders of magnitude.

Evaluation of Advanced Polymers for Additive Manufacturing

Energy Technology Data Exchange (ETDEWEB)

Rios, Orlando [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Carter, William G. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Kutchko, Cindy [PPG Industries, Pittsburgh, PA (United States); Fenn, David [PPG Industries, Pittsburgh, PA (United States); Olson, Kurt [PPG Industries, Pittsburgh, PA (United States)

2017-09-08

The goal of this Manufacturing Demonstration Facility (MDF) technical collaboration project between Oak Ridge National Laboratory (ORNL) and PPG Industries, Inc. (PPG) was to evaluate the feasibility of using conventional coatings chemistry and technology to build up material layer-by-layer. The PPG-ORNL study successfully demonstrated that polymeric coatings formulations may overcome many limitations of common thermoplastics used in additive manufacturing (AM), allow lightweight nozzle design for material deposition, and increase build rate. The materials effort focused on layer-by-layer deposition of coatings with each layer fusing together. The combination of materials and deposition results in an additively manufactured build that has sufficient mechanical properties to bear the load of additional layers, yet is capable of bonding across the z-layers to improve build direction strength. The formulation properties were tuned to enable a novel, high-throughput deposition method that is highly scalable, compatible with high loading of reinforcing fillers, and inherently low-cost.

GaN/NbN epitaxial semiconductor/superconductor heterostructures

Science.gov (United States)

Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

2018-03-01

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

Strain-Modulated Epitaxy

National Research Council Canada - National Science Library

Brown, April

1999-01-01

Strain-Modulated Epitaxy (SME) is a novel approach, invented at Georgia Tech, to utilize subsurface stressors to control strain and therefore material properties and growth kinetics in the material above the stressors...

The Experiment Method for Manufacturing Grid Development on Single Computer

Institute of Scientific and Technical Information of China (English)

XIAO Youan; ZHOU Zude

2006-01-01

In this paper, an experiment method for the Manufacturing Grid application system development in the single personal computer environment is proposed. The characteristic of the proposed method is constructing a full prototype Manufacturing Grid application system which is hosted on a single personal computer with the virtual machine technology. Firstly, it builds all the Manufacturing Grid physical resource nodes on an abstraction layer of a single personal computer with the virtual machine technology. Secondly, all the virtual Manufacturing Grid resource nodes will be connected with virtual network and the application software will be deployed on each Manufacturing Grid nodes. Then, we can obtain a prototype Manufacturing Grid application system which is working in the single personal computer, and can carry on the experiment on this foundation. Compared with the known experiment methods for the Manufacturing Grid application system development, the proposed method has the advantages of the known methods, such as cost inexpensively, operation simple, and can get the confidence experiment result easily. The Manufacturing Grid application system constructed with the proposed method has the high scalability, stability and reliability. It is can be migrated to the real application environment rapidly.

Scalable devices

KAUST Repository

Krü ger, Jens J.; Hadwiger, Markus

2014-01-01

In computer science in general and in particular the field of high performance computing and supercomputing the term scalable plays an important role. It indicates that a piece of hardware, a concept, an algorithm, or an entire system scales

Increasing the radiation resistance of single-crystal silicon epitaxial layers

Directory of Open Access Journals (Sweden)

Kurmashev Sh. D.

2014-12-01

Full Text Available The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 109—1012 m–2. Such networks are created before the epitaxial layer is applied on the front surface of the silicon substrate by its preliminary oxidation and subsequent etching of the oxide layer. The substrates were silicon wafers KEF-4.5 and KDB-10 with a diameter of about 40 mm, grown by the Czochralski method. Irradiation of the samples was carried out using electron linear accelerator "Electronics" (ЭЛУ-4. Energy of the particles was 2,3—3,0 MeV, radiation dose 1015—1020 m–2, electron beam current 2 mA/m2. It is shown that in structures containing dislocation networks, irradiation results in reduction of the reverse currents by 5—8 times and of the density of defects by 5—10 times, while the mobility of the charge carriers is increased by 1,2 times. Wafer yield for operation under radiation exposure, when the semiconductor structures are formed in the optimal mode, is increased by 7—10% compared to the structures without dislocation networks. The results obtained can be used in manufacturing technology for radiation-resistant integrated circuits (bipolar, CMOS, BiCMOS, etc..

Scalability of Direct Solver for Non-stationary Cahn-Hilliard Simulations with Linearized time Integration Scheme

KAUST Repository

Woźniak, M.

2016-06-02

We study the features of a new mixed integration scheme dedicated to solving the non-stationary variational problems. The scheme is composed of the FEM approximation with respect to the space variable coupled with a 3-leveled time integration scheme with a linearized right-hand side operator. It was applied in solving the Cahn-Hilliard parabolic equation with a nonlinear, fourth-order elliptic part. The second order of the approximation along the time variable was proven. Moreover, the good scalability of the software based on this scheme was confirmed during simulations. We verify the proposed time integration scheme by monitoring the Ginzburg-Landau free energy. The numerical simulations are performed by using a parallel multi-frontal direct solver executed over STAMPEDE Linux cluster. Its scalability was compared to the results of the three direct solvers, including MUMPS, SuperLU and PaSTiX.

Performance-scalable volumetric data classification for online industrial inspection

Science.gov (United States)

Abraham, Aby J.; Sadki, Mustapha; Lea, R. M.

2002-03-01

Non-intrusive inspection and non-destructive testing of manufactured objects with complex internal structures typically requires the enhancement, analysis and visualization of high-resolution volumetric data. Given the increasing availability of fast 3D scanning technology (e.g. cone-beam CT), enabling on-line detection and accurate discrimination of components or sub-structures, the inherent complexity of classification algorithms inevitably leads to throughput bottlenecks. Indeed, whereas typical inspection throughput requirements range from 1 to 1000 volumes per hour, depending on density and resolution, current computational capability is one to two orders-of-magnitude less. Accordingly, speeding up classification algorithms requires both reduction of algorithm complexity and acceleration of computer performance. A shape-based classification algorithm, offering algorithm complexity reduction, by using ellipses as generic descriptors of solids-of-revolution, and supporting performance-scalability, by exploiting the inherent parallelism of volumetric data, is presented. A two-stage variant of the classical Hough transform is used for ellipse detection and correlation of the detected ellipses facilitates position-, scale- and orientation-invariant component classification. Performance-scalability is achieved cost-effectively by accelerating a PC host with one or more COTS (Commercial-Off-The-Shelf) PCI multiprocessor cards. Experimental results are reported to demonstrate the feasibility and cost-effectiveness of the data-parallel classification algorithm for on-line industrial inspection applications.

Tolerances in micro manufacturing

DEFF Research Database (Denmark)

Hansen, Hans Nørgaard; Zhang, Yang; Islam, Aminul

This paper describes a method for analysis of tolerances in micro manufacturing. It proposes a mapping oftolerances to dimensions and compares this with current available international standards. The analysisdocuments that tolerances are not scaled down as the absolute dimension. In practice...

About influence of buffer porous layers between epitaxial layers of heterostructure on distributions of concentrations of dopants in heterobipolar transistors

Directory of Open Access Journals (Sweden)

E Pankratov

2016-10-01

Full Text Available In this paper we introduce an approach to manufacture a heterobipolar transistors. Framework this approach we consider doping by diffusion or by ion implantation of required parts of a heterostructure with special configuration and optimization of annealing of dopant and/or radiation defects. In this case one have possibility to manufacture bipolar transistors, which include into itself p-n-junctions with higher sharpness and smaller dimensions. We also consider influence of presents of buffer porous layers between epitaxial layers of heterostructure on distributions of concentrations of dopants in the considered transistors. An approach to decrease value of mismatch-induced stress has been considered.

Surface chemistry and growth mechanisms studies of homo epitaxial (1 0 0) GaAs by laser molecular beam epitaxy

International Nuclear Information System (INIS)

Yan Dawei; Wu Weidong; Zhang Hong; Wang Xuemin; Zhang Hongliang; Zhang Weibin; Xiong Zhengwei; Wang Yuying; Shen Changle; Peng Liping; Han Shangjun; Zhou Minjie

2011-01-01

In this paper, GaAs thin film has been deposited on thermally desorbed (1 0 0) GaAs substrate using laser molecular beam epitaxy. Scanning electron microscopy, in situ reflection high energy electron diffraction and in situ X-ray photoelectron spectroscopy are applied for evaluation of the surface morphology and chemistry during growth process. The results show that a high density of pits is formed on the surface of GaAs substrate after thermal treatment and the epitaxial thin film heals itself by a step flow growth, resulting in a smoother surface morphology. Moreover, it is found that the incorporation of As species into GaAs epilayer is more efficient in laser molecular beam epitaxy than conventional molecular beam epitaxy. We suggest the growth process is impacted by surface chemistry and morphology of GaAs substrate after thermal treatment and the growth mechanisms are discussed in details.

Semiconductors and semimetals epitaxial microstructures

CERN Document Server

Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

1994-01-01

Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

Spraying Techniques for Large Scale Manufacturing of PEM-FC Electrodes

Science.gov (United States)

Hoffman, Casey J.

Fuel cells are highly efficient energy conversion devices that represent one part of the solution to the world's current energy crisis in the midst of global climate change. When supplied with the necessary reactant gasses, fuel cells produce only electricity, heat, and water. The fuel used, namely hydrogen, is available from many sources including natural gas and the electrolysis of water. If the electricity for electrolysis is generated by renewable energy (e.g., solar and wind power), fuel cells represent a completely 'green' method of producing electricity. The thought of being able to produce electricity to power homes, vehicles, and other portable or stationary equipment with essentially zero environmentally harmful emissions has been driving academic and industrial fuel cell research and development with the goal of successfully commercializing this technology. Unfortunately, fuel cells cannot achieve any appreciable market penetration at their current costs. The author's hypothesis is that: the development of automated, non-contact deposition methods for electrode manufacturing will improve performance and process flexibility, thereby helping to accelerate the commercialization of PEMFC technology. The overarching motivation for this research was to lower the cost of manufacturing fuel cell electrodes and bring the technology one step closer to commercial viability. The author has proven this hypothesis through a detailed study of two non-contact spraying methods. These scalable deposition systems were incorporated into an automated electrode manufacturing system that was designed and built by the author for this research. The electrode manufacturing techniques developed by the author have been shown to produce electrodes that outperform a common lab-scale contact method that was studied as a baseline, as well as several commercially available electrodes. In addition, these scalable, large scale electrode manufacturing processes developed by the author are

A simple route to scalable fabrication of perfectly ordered ZnO nanorod arrays

International Nuclear Information System (INIS)

Liu, D F; Xiang, Y J; Liao, Q; Zhang, J P; Wu, X C; Zhang, Z X; Liu, L F; Ma, W J; Shen, J; Zhou, W Y; Xie, S S

2007-01-01

ZnO nanorod arrays with perfect order and uniformity were prepared using a simple, low-cost, commonly available and scalable nanosphere lithography for patterning gold catalyst particles and a successive bottom-up growth technique in a tube furnace chemical vapor deposition system. Each rod in the arrays had perfect surface facets, sharp edges and uniform size. For all of the rods, their sides were oriented the same. This bottom-up assembly method may accelerate the use of ZnO nanorods in real device applications

Interface relaxation and band gap shift in epitaxial layers

Directory of Open Access Journals (Sweden)

Ziming Zhu

2012-12-01

Full Text Available Although it is well known that the interface relaxation plays the crucial role for the electronic properties in semiconductor epitaxial layers, there is lack of a clear definition of relationship between interfacial bond-energy variation and interface bond-nature-factor (IBNF in epitaxial layers before and after relaxation. Here we establish an analytical method to shed light on the relationship between the IBNF and the bond-energy change, as well as the relation with band offset in epitaxial layers from the perspective of atomic-bond-relaxation consideration and continuum mechanics. The theoretical predictions are consistent with the available evidences, which provide an atomistic understanding on underlying mechanism of interface effect in epitaxial nanostructures. Thus, it will be helpful for opening up to tailor physical-chemical properties of the epitaxial nanostructures to the desired specifications.

Epitaxial Graphene: A New Material for Electronics

Science.gov (United States)

de Heer, Walt A.

2007-10-01

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persists above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high mobility epitaxial graphene. It appears that the effect is suppressed due to absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low dissipation high-speed nano-electronics.

Several alternative approaches to the manufacturing of HTS Josephson junctions

OpenAIRE

Villegier , J.; Boucher , H.; Ghis , A.; Levis , M.; Méchin , Laurence; Moriceau , H.; Pourtier , F.; Vabre , M.; Nicoletti , S.; Correra , L.

1994-01-01

In this work we describe comparatively the fabrication and the characterization of various types of HTS Josephson junctions manufactured using different processes : grain boundary junctions have been studied both by the way of junctions on bicrystal substrates and of bi-epitaxial junctions. Ramp-edge types have been elaborated and characterized using mainly N-YBaCuO thin film as a barrier while the trilayer approach has been investigated through a-axis structures. YBaCuO or GdBaCuO supercondu...

Epitaxial growth and new phase of single crystal Dy by molecular beam epitaxy

International Nuclear Information System (INIS)

Yang, Kai-Yueh; Homma, Hitoshi; Schuller, I.K.

1987-09-01

We have grown two novel epitaxial phases of dysprosium (Dy) on vanadium (V) by molecular beam epitaxy technique. Surface and bulk structures are studied by in-situ reflection high energy electron diffraction (RHEED) and x-ray diffraction techniques. The new hcp phases are ∼4% expanded uniformly in-plane (0001), and ∼9% and ∼4% expanded out of plane along the c-axes for non-interrupted and interrupted deposition case, respectively. We also observed (2 x 2), (3 x 3), and (4 x 4) Dy surface reconstruction patterns and a series of transitions as the Dy film thickness increases. 12 refs., 3 figs

Advanced technologies for scalable ATLAS conditions database access on the grid

International Nuclear Information System (INIS)

Basset, R; Canali, L; Girone, M; Hawkings, R; Valassi, A; Viegas, F; Dimitrov, G; Nevski, P; Vaniachine, A; Walker, R; Wong, A

2010-01-01

During massive data reprocessing operations an ATLAS Conditions Database application must support concurrent access from numerous ATLAS data processing jobs running on the Grid. By simulating realistic work-flow, ATLAS database scalability tests provided feedback for Conditions Db software optimization and allowed precise determination of required distributed database resources. In distributed data processing one must take into account the chaotic nature of Grid computing characterized by peak loads, which can be much higher than average access rates. To validate database performance at peak loads, we tested database scalability at very high concurrent jobs rates. This has been achieved through coordinated database stress tests performed in series of ATLAS reprocessing exercises at the Tier-1 sites. The goal of database stress tests is to detect scalability limits of the hardware deployed at the Tier-1 sites, so that the server overload conditions can be safely avoided in a production environment. Our analysis of server performance under stress tests indicates that Conditions Db data access is limited by the disk I/O throughput. An unacceptable side-effect of the disk I/O saturation is a degradation of the WLCG 3D Services that update Conditions Db data at all ten ATLAS Tier-1 sites using the technology of Oracle Streams. To avoid such bottlenecks we prototyped and tested a novel approach for database peak load avoidance in Grid computing. Our approach is based upon the proven idea of pilot job submission on the Grid: instead of the actual query, an ATLAS utility library sends to the database server a pilot query first.

Point defect balance in epitaxial GaSb

International Nuclear Information System (INIS)

Segercrantz, N.; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F.; Song, Y.; Wang, S.

2014-01-01

Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

Scalable algorithms for contact problems

CERN Document Server

Dostál, Zdeněk; Sadowská, Marie; Vondrák, Vít

2016-01-01

This book presents a comprehensive and self-contained treatment of the authors’ newly developed scalable algorithms for the solutions of multibody contact problems of linear elasticity. The brand new feature of these algorithms is theoretically supported numerical scalability and parallel scalability demonstrated on problems discretized by billions of degrees of freedom. The theory supports solving multibody frictionless contact problems, contact problems with possibly orthotropic Tresca’s friction, and transient contact problems. It covers BEM discretization, jumping coefficients, floating bodies, mortar non-penetration conditions, etc. The exposition is divided into four parts, the first of which reviews appropriate facets of linear algebra, optimization, and analysis. The most important algorithms and optimality results are presented in the third part of the volume. The presentation is complete, including continuous formulation, discretization, decomposition, optimality results, and numerical experimen...

Position-controlled epitaxial III-V nanowires on silicon

Energy Technology Data Exchange (ETDEWEB)

Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M [Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven (Netherlands); Kavli Institute of NanoScience, Delft University of Technology, PO Box 5046, 2600 GA Delft (Netherlands)

2006-06-14

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.

Position-controlled epitaxial III-V nanowires on silicon

International Nuclear Information System (INIS)

Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires

Large-scale additive manufacturing with bioinspired cellulosic materials.

Science.gov (United States)

Sanandiya, Naresh D; Vijay, Yadunund; Dimopoulou, Marina; Dritsas, Stylianos; Fernandez, Javier G

2018-06-05

Cellulose is the most abundant and broadly distributed organic compound and industrial by-product on Earth. However, despite decades of extensive research, the bottom-up use of cellulose to fabricate 3D objects is still plagued with problems that restrict its practical applications: derivatives with vast polluting effects, use in combination with plastics, lack of scalability and high production cost. Here we demonstrate the general use of cellulose to manufacture large 3D objects. Our approach diverges from the common association of cellulose with green plants and it is inspired by the wall of the fungus-like oomycetes, which is reproduced introducing small amounts of chitin between cellulose fibers. The resulting fungal-like adhesive material(s) (FLAM) are strong, lightweight and inexpensive, and can be molded or processed using woodworking techniques. We believe this first large-scale additive manufacture with ubiquitous biological polymers will be the catalyst for the transition to environmentally benign and circular manufacturing models.

A Multi-Component Automated Laser-Origami System for Cyber-Manufacturing

Science.gov (United States)

Ko, Woo-Hyun; Srinivasa, Arun; Kumar, P. R.

2017-12-01

Cyber-manufacturing systems can be enhanced by an integrated network architecture that is easily configurable, reliable, and scalable. We consider a cyber-physical system for use in an origami-type laser-based custom manufacturing machine employing folding and cutting of sheet material to manufacture 3D objects. We have developed such a system for use in a laser-based autonomous custom manufacturing machine equipped with real-time sensing and control. The basic elements in the architecture are built around the laser processing machine. They include a sensing system to estimate the state of the workpiece, a control system determining control inputs for a laser system based on the estimated data and user’s job requests, a robotic arm manipulating the workpiece in the work space, and middleware, named Etherware, supporting the communication among the systems. We demonstrate automated 3D laser cutting and bending to fabricate a 3D product as an experimental result.

Direct Measurements of Island Growth and Step-Edge Barriers in Colloidal Epitaxy

KAUST Repository

Ganapathy, R.

2010-01-21

Epitaxial growth, a bottom-up self-assembly process for creating surface nano- and microstructures, has been extensively studied in the context of atoms. This process, however, is also a promising route to self-assembly of nanometer- and micrometer-scale particles into microstructures that have numerous technological applications. To determine whether atomic epitaxial growth laws are applicable to the epitaxy of larger particles with attractive interactions, we investigated the nucleation and growth dynamics of colloidal crystal films with single-particle resolution. We show quantitatively that colloidal epitaxy obeys the same two-dimensional island nucleation and growth laws that govern atomic epitaxy. However, we found that in colloidal epitaxy, step-edge and corner barriers that are responsible for film morphology have a diffusive origin. This diffusive mechanism suggests new routes toward controlling film morphology during epitaxy.

All-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayers fabricated by Sn-induced low-temperature epitaxy

Energy Technology Data Exchange (ETDEWEB)

Kawano, M.; Ikawa, M.; Arima, K.; Yamada, S.; Kanashima, T.; Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531 (Japan)

2016-01-28

We demonstrate low-temperature growth of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures by developing Sn-induced surfactant-mediated molecular beam epitaxy (SMBE) of Ge on Co{sub 2}FeSi. Despite the growth of a semiconductor on a metal, we verify that the inserted Sn monolayers between Ge and Co{sub 2}FeSi enable to promote the 2D epitaxial growth of Ge up to 5 nm at a T{sub G} of 250 °C. An understanding of the mechanism of the Sn-induced SMBE leads to the achievement of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures with spin-valve-like magnetization reversals. This study will open a way for vertical-type and high-performance Ge-based spintronics devices.

Epitaxial patterning of thin-films: conventional lithographies and beyond

International Nuclear Information System (INIS)

Zhang, Wei; Krishnan, Kannan M

2014-01-01

Thin-film based novel magnetic and electronic devices have entered a new era in which the film crystallography, structural coherence, and epitaxy play important roles in determining their functional properties. The capabilities of controlling such structural and functional properties are being continuously developed by various physical deposition technologies. Epitaxial patterning strategies further allow the miniaturization of such novel devices, which incorporates thin-film components into nanoscale architectures while keeping their functional properties unmodified from their ideal single-crystal values. In the past decade, epitaxial patterning methods on the laboratory scale have been reported to meet distinct scientific inquires, in which the techniques and processes used differ from one to the other. In this review we summarize many of these pioneering endeavors in epitaxial patterning of thin-film devices that use both conventional and novel lithography techniques. These methods demonstrate epitaxial patterning for a broad range of materials (metals, oxides, and semiconductors) and cover common device length scales from micrometer to sub-hundred nanometer. Whilst we have been motivated by magnetic materials and devices, we present our outlook on developing systematic-strategies for epitaxial patterning of functional materials which will pave the road for the design, discovery and industrialization of next-generation advanced magnetic and electronic nano-devices. (topical review)

Solution-Processing of Organic Solar Cells: From In Situ Investigation to Scalable Manufacturing

KAUST Repository

Abdelsamie, Maged

2016-01-01

-cost manufacturing of sufficiently efficient devices at high throughput on large-area rigid or flexible substrates with potentially low energy and carbon footprints. In OPVs, the photoactive layer is made of a bulk heterojunction (BHJ) layer and is typically composed

Obtaining of bilateral high voltage epitaxial p—i—n Si structures by LPE method

Directory of Open Access Journals (Sweden)

Vakiv N. M.

2013-12-01

Full Text Available Silicon p—i—n-structures are usually obtained using conventional diffusion method or liquid phase epitaxy (LPE. In both cases, the formation of p- and n-layers occurs in two stages. This technological approach is quite complex. Moreover, when forming bilateral high-voltage epitaxial layers, their parameters significantly deteriorate as a result of prolonged heat treatment of active high-resistivity layer. Besides, when using diffusion method, it is impossible to provide good reproducibility of the process. In this paper a technique of growing bilateral high-voltage silicon p—i—n-structures by LPE in a single process is proposed. The authors have obtained the optimum compounds of silicon-undersaturated molten solutions for highly doped (5•1018 cm–3 contact layers: 0.4—0.8 at. % aluminum in gallium melt for growing p-Si-layers and 0.03—0.15 at. % ytterbium in tin melt for n-Si-layers. Parameters of such structures provide for manufacturing of high-voltage diodes on their basis. Such diodes can be used in navigational equipment, communication systems for household and special purposes, on-board power supply systems, radar systems, medical equipment, etc.

New Complexity Scalable MPEG Encoding Techniques for Mobile Applications

Directory of Open Access Journals (Sweden)

Stephan Mietens

2004-03-01

Full Text Available Complexity scalability offers the advantage of one-time design of video applications for a large product family, including mobile devices, without the need of redesigning the applications on the algorithmic level to meet the requirements of the different products. In this paper, we present complexity scalable MPEG encoding having core modules with modifications for scalability. The interdependencies of the scalable modules and the system performance are evaluated. Experimental results show scalability giving a smooth change in complexity and corresponding video quality. Scalability is basically achieved by varying the number of computed DCT coefficients and the number of evaluated motion vectors but other modules are designed such they scale with the previous parameters. In the experiments using the “Stefan” sequence, the elapsed execution time of the scalable encoder, reflecting the computational complexity, can be gradually reduced to roughly 50% of its original execution time. The video quality scales between 20 dB and 48 dB PSNR with unity quantizer setting, and between 21.5 dB and 38.5 dB PSNR for different sequences targeting 1500 kbps. The implemented encoder and the scalability techniques can be successfully applied in mobile systems based on MPEG video compression.

Lean manufacturing in Indian context: A survey

Directory of Open Access Journals (Sweden)

Rakesh Kumar

2015-04-01

Full Text Available This paper is an attempt to examine the implementation of Lean Manufacturing system in the Indian industries. Predominant elements of Lean Manufacturing, benefits gained after its implementation and obstacles observed by Indian Industry have been recognized. The results of this survey support the opinion that Lean Manufacturing had potential to improve the organizational performance of Indian industries. Nevertheless, Indian industries are required to be passionate to transform their manufacturing by adopting Lean manufacturing to gain the full benefits. A large numbers of literature papers are available on the better side of Lean manufacturing approach and its benefits gained by manufacturing organizations after implementation. But the adverse impacts of Lean manufacturing are not discussed to a great extent. Some drawbacks of Lean manufacturing are also highlighted in this paper.

Self-assembled epitaxial NiSi2 nanowires on Si(001) by reactive deposition epitaxy

International Nuclear Information System (INIS)

Chen, S.Y.; Chen, L.J.

2006-01-01

Self-assembled epitaxial NiSi 2 nanowires have been fabricated on Si(001) by reactive deposition epitaxy (RDE). The RDE method promoted nanowire growth since it provides deposited atoms sufficient kinetic energy for movement on the Si surface during the growth of silicide islands. The twin-related interface between NiSi 2 and Si is directly related to the nanowire formation since it breaks the symmetry of the surface and leads to the asymmetric growth. The temperature of RDE was found to greatly influence the formation of nanowires. By RDE at 750 deg. C, a high density of NiSi 2 nanowires was formed with an average aspect ratio of 30

Molecular beam epitaxy a short history

CERN Document Server

Orton, J W

2015-01-01

This volume describes the development of molecular beam epitaxy from its origins in the 1960s through to the present day. It begins with a short historical account of other methods of crystal growth, both bulk and epitaxial, to set the subject in context, emphasising the wide range of semiconductor materials employed. This is followed by an introduction to molecular beams and their use in the Stern-Gerlach experiment and the development of the microwave MASER.

Droplet Epitaxy Image Contrast in Mirror Electron Microscopy

Science.gov (United States)

Kennedy, S. M.; Zheng, C. X.; Jesson, D. E.

2017-01-01

Image simulation methods are applied to interpret mirror electron microscopy (MEM) images obtained from a movie of GaAs droplet epitaxy. Cylindrical symmetry of structures grown by droplet epitaxy is assumed in the simulations which reproduce the main features of the experimental MEM image contrast, demonstrating that droplet epitaxy can be studied in real-time. It is therefore confirmed that an inner ring forms at the droplet contact line and an outer ring (or skirt) occurs outside the droplet periphery. We believe that MEM combined with image simulations will be increasingly used to study the formation and growth of quantum structures.

Scalable Multi-Platform Distribution of Spatial 3d Contents

Science.gov (United States)

Klimke, J.; Hagedorn, B.; Döllner, J.

2013-09-01

Virtual 3D city models provide powerful user interfaces for communication of 2D and 3D geoinformation. Providing high quality visualization of massive 3D geoinformation in a scalable, fast, and cost efficient manner is still a challenging task. Especially for mobile and web-based system environments, software and hardware configurations of target systems differ significantly. This makes it hard to provide fast, visually appealing renderings of 3D data throughout a variety of platforms and devices. Current mobile or web-based solutions for 3D visualization usually require raw 3D scene data such as triangle meshes together with textures delivered from server to client, what makes them strongly limited in terms of size and complexity of the models they can handle. In this paper, we introduce a new approach for provisioning of massive, virtual 3D city models on different platforms namely web browsers, smartphones or tablets, by means of an interactive map assembled from artificial oblique image tiles. The key concept is to synthesize such images of a virtual 3D city model by a 3D rendering service in a preprocessing step. This service encapsulates model handling and 3D rendering techniques for high quality visualization of massive 3D models. By generating image tiles using this service, the 3D rendering process is shifted from the client side, which provides major advantages: (a) The complexity of the 3D city model data is decoupled from data transfer complexity (b) the implementation of client applications is simplified significantly as 3D rendering is encapsulated on server side (c) 3D city models can be easily deployed for and used by a large number of concurrent users, leading to a high degree of scalability of the overall approach. All core 3D rendering techniques are performed on a dedicated 3D rendering server, and thin-client applications can be compactly implemented for various devices and platforms.

Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates: A word of caution for the epitaxial growers

Energy Technology Data Exchange (ETDEWEB)

Chatterjee, Abhishek, E-mail: cabhishek@rrcat.gov.in; Khamari, Shailesh K.; Kumar, R.; Dixit, V. K.; Oak, S. M.; Sharma, T. K., E-mail: tarun@rrcat.gov.in [Semiconductor Physics and Devices Laboratory, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

2015-01-12

GaN templates grown by hydride vapour phase epitaxy (HVPE) and metal organic vapour phase epitaxy (MOVPE) techniques are compared through electronic transport measurements. Carrier concentration measured by Hall technique is about two orders larger than the values estimated by capacitance voltage method for HVPE templates. It is learnt that there exists a critical thickness of HVPE templates below which the transport properties of epitaxial layers grown on top of them are going to be severely limited by the density of charged dislocations lying at layer-substrate interface. On the contrary MOVPE grown templates are found to be free from such limitations.

A high resolution cross section transmission electron microscopy study of epitaxial rare earth fluoride/GaAs(111) interfaces prepared by molecular beam epitaxy

International Nuclear Information System (INIS)

Chien, C.J.; Bravman, J.C.

1990-01-01

The authors report the HRXTEM study of epitaxial rare earth fluoride/GaAs(111) interfaces. Such interfaces are of interest because they are the starting point for growth of buried epitaxial rare earth/rare earth fluoride sandwich structures which exhibit interesting and non bulk-like magnetic properties. Also, the optical transitions in ultrathin epitaxial NdF 3 films may be influenced by strain and defects in the NdF 3 film and the nature of the interface to GaAs. The authors find that the rare earth fluoride/GaAs interfaces are semi-coherent but chemically abrupt with the transition taking place within 3 Angstrom. However, the interface is physically rough and multiple monolayer steps in the GaAs surface tend to tilt boundaries in the fluoride. The origin of these steps is believed to be thermal etching of the GaAs during the heat- cleaning stage prior to epitaxy. The surface of the fluoride film is much smoother than the initial GaAs surface indicating planarization during epitaxy

Techno-Economic Analysis of Scalable Coal-Based Fuel Cells

Energy Technology Data Exchange (ETDEWEB)

Chuang, Steven S. C. [Univ. of Akron, OH (United States)

2014-08-31

Researchers at The University of Akron (UA) have demonstrated the technical feasibility of a laboratory coal fuel cell that can economically convert high sulfur coal into electricity with near zero negative environmental impact. Scaling up this coal fuel cell technology to the megawatt scale for the nation’s electric power supply requires two key elements: (i) developing the manufacturing technology for the components of the coal-based fuel cell, and (ii) long term testing of a kW scale fuel cell pilot plant. This project was expected to develop a scalable coal fuel cell manufacturing process through testing, demonstrating the feasibility of building a large-scale coal fuel cell power plant. We have developed a reproducible tape casting technique for the mass production of the planner fuel cells. Low cost interconnect and cathode current collector material was identified and current collection was improved. In addition, this study has demonstrated that electrochemical oxidation of carbon can take place on the Ni anode surface and the CO and CO₂ product produced can further react with carbon to initiate the secondary reactions. One important secondary reaction is the reaction of carbon with CO₂ to produce CO. We found CO and carbon can be electrochemically oxidized simultaneously inside of the anode porous structure and on the surface of anode for producing electricity. Since CH₄ produced from coal during high temperature injection of coal into the anode chamber can cause severe deactivation of Ni-anode, we have studied how CH₄ can interact with CO₂ to produce in the anode chamber. CO produced was found able to inhibit coking and allow the rate of anode deactivation to be decreased. An injection system was developed to inject the solid carbon and coal fuels without bringing air into the anode chamber. Five planner fuel cells connected in a series configuration and tested. Extensive studies on the planner fuels

High efficiency thin film solar cells grown by molecular beam epitaxy (HEFTY)

Energy Technology Data Exchange (ETDEWEB)

Mason, N.B.; Barnham, K.W.J.; Ballard, I.M.; Zhang, J. [Imperial College, London (United Kingdom)

2006-05-04

The project sought to show the UK as a world leader in the field of thin film crystalline solar cells. A premise was that the cell design be suitable for large-scale manufacturing and provide a basis for industrial exploitation. The study demonstrated (1) that silicon films grown at temperatures suitable for deposition on glass by Gas Phase Molecular Beam Epitaxy gives better PV cells than does Ultra Low Pressure Chemical Vapor Deposition; (2) a conversion energy of 15 per cent was achieved - the project target was 18 per cent and (3) one of the highest reported conversion efficiencies for a 15 micrometre silicon film was achieved. The study was carried out by BP Solar Limited under contract to the DTI.

TEM study of xenon bubbles evolution in Xe-implanted Cu. Bubbles shape, epitaxial orientation and adsorption phenomenon

International Nuclear Information System (INIS)

Guillot, J.; Cartraud, M.; Garem, H.; Templier, C.; Desoyer, J.C.

1987-01-01

TEM is used to perform a study of xenon clusters changes in Xe-implanted Cu. After implantation, xenon is gathered into f.c.c. crystalline precipitates with a lattice parameter value of 0.580 nm. During annealing at 600 0 C large (110) facetted bubbles appear (2r≅35 nm) which contain fluid xenon. When cooling down to 100 K, xenon solidifies on bubbles facets in form of a thin membrane. The epitaxial orientations between solid xenon and copper are the same as adsorbed Xe on Cu(110) [fr

High sensitive quasi freestanding epitaxial graphene gas sensor on 6H-SiC

NARCIS (Netherlands)

Iezhokin, I.; Offermans, P.; Brongersma, S.H.; Giesbers, A.J.M.; Flipse, C.F.J.

2013-01-01

We have measured the electrical response to NO2, N2, NH3, and CO for epitaxial graphene and quasi freestanding epitaxial graphene on 6H-SiC substrates. Quasi freestanding epitaxial graphene shows a 6 fold increase in NO2 sensitivity compared to epitaxial graphene. Both samples show a sensitivity

Collaborative Manufacturing for Small-Medium Enterprises

Science.gov (United States)

Irianto, D.

2016-02-01

Manufacturing systems involve decisions concerning production processes, capacity, planning, and control. In a MTO manufacturing systems, strategic decisions concerning fulfilment of customer requirement, manufacturing cost, and due date of delivery are the most important. In order to accelerate the decision making process, research on decision making structure when receiving order and sequencing activities under limited capacity is required. An effective decision making process is typically required by small-medium components and tools maker as supporting industries to large industries. On one side, metal small-medium enterprises are expected to produce parts, components or tools (i.e. jigs, fixture, mold, and dies) with high precision, low cost, and exact delivery time. On the other side, a metal small- medium enterprise may have weak bargaining position due to aspects such as low production capacity, limited budget for material procurement, and limited high precision machine and equipment. Instead of receiving order exclusively, a small-medium enterprise can collaborate with other small-medium enterprise in order to fulfill requirements high quality, low manufacturing cost, and just in time delivery. Small-medium enterprises can share their best capabilities to form effective supporting industries. Independent body such as community service at university can take a role as a collaboration manager. The Laboratory of Production Systems at Bandung Institute of Technology has implemented shared manufacturing systems for small-medium enterprise collaboration.

Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

Energy Technology Data Exchange (ETDEWEB)

Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

2011-07-01

We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods

KAUST Repository

Wang, Ping

2017-01-18

Lattice-symmetry-driven epitaxy of hierarchical GaN nanotripods is demonstrated. The nanotripods emerge on the top of hexagonal GaN nanowires, which are selectively grown on pillar-patterned GaN templates using molecular beam epitaxy. High-resolution transmission electron microscopy confirms that two kinds of lattice-symmetry, wurtzite (wz) and zinc-blende (zb), coexist in the GaN nanotripods. Periodical transformation between wz and zb drives the epitaxy of the hierarchical nanotripods with N-polarity. The zb-GaN is formed by the poor diffusion of adatoms, and it can be suppressed by improving the ability of the Ga adatoms to migrate as the growth temperature increased. This controllable epitaxy of hierarchical GaN nanotripods allows quantum dots to be located at the phase junctions of the nanotripods and nanowires, suggesting a new recipe for multichannel quantum devices.

Fast volume reconstruction in positron emission tomography: Implementation of four algorithms on a high-performance scalable parallel platform

International Nuclear Information System (INIS)

Egger, M.L.; Scheurer, A.H.; Joseph, C.

1996-01-01

The issue of long reconstruction times in PET has been addressed from several points of view, resulting in an affordable dedicated system capable of handling routine 3D reconstruction in a few minutes per frame: on the hardware side using fast processors and a parallel architecture, and on the software side, using efficient implementations of computationally less intensive algorithms. Execution times obtained for the PRT-1 data set on a parallel system of five hybrid nodes, each combining an Alpha processor for computation and a transputer for communication, are the following (256 sinograms of 96 views by 128 radial samples): Ramp algorithm 56 s, Favor 81 s and reprojection algorithm of Kinahan and Rogers 187 s. The implementation of fast rebinning algorithms has shown our hardware platform to become communications-limited; they execute faster on a conventional single-processor Alpha workstation: single-slice rebinning 7 s, Fourier rebinning 22 s, 2D filtered backprojection 5 s. The scalability of the system has been demonstrated, and a saturation effect at network sizes above ten nodes has become visible; new T9000-based products lifting most of the constraints on network topology and link throughput are expected to result in improved parallel efficiency and scalability properties

The study of CD side to side error in line/space pattern caused by post-exposure bake effect

Science.gov (United States)

Huang, Jin; Guo, Eric; Ge, Haiming; Lu, Max; Wu, Yijun; Tian, Mingjing; Yan, Shichuan; Wang, Ran

2016-10-01

In semiconductor manufacturing, as the design rule has decreased, the ITRS roadmap requires crucial tighter critical dimension (CD) control. CD uniformity is one of the necessary parameters to assure good performance and reliable functionality of any integrated circuit (IC) [1] [2], and towards the advanced technology nodes, it is a challenge to control CD uniformity well. The study of corresponding CD Uniformity by tuning Post-Exposure bake (PEB) and develop process has some significant progress[3], but CD side to side error happening to some line/space pattern are still found in practical application, and the error has approached to over the uniformity tolerance. After details analysis, even though use several developer types, the CD side to side error has not been found significant relationship to the developing. In addition, it is impossible to correct the CD side to side error by electron beam correction as such error does not appear in all Line/Space pattern masks. In this paper the root cause of CD side to side error is analyzed and the PEB module process are optimized as a main factor for improvement of CD side to side error.

Atomic layer epitaxy of ZnO for applications in molecular beam epitaxy growth of GaN and InGaN

International Nuclear Information System (INIS)

Godlewski, M.; Szczerbakow, A.; Ivanov, V. Yu.; Barski, A.; Goldys, E.M.

2000-01-01

We report the successful atomic layer epitaxy growth of thin ZnO films and their use for GaN and InGaN epitaxy. The properties of ZnO epilayers, obtained by four different procedures, are analysed, as well as of GaN and InGaN films grown on ZnO-coated Si and GaAs by MBE. (author)

Large Scale Frequent Pattern Mining using MPI One-Sided Model

Energy Technology Data Exchange (ETDEWEB)

Vishnu, Abhinav; Agarwal, Khushbu

2015-09-08

In this paper, we propose a work-stealing runtime --- Library for Work Stealing LibWS --- using MPI one-sided model for designing scalable FP-Growth --- {\\em de facto} frequent pattern mining algorithm --- on large scale systems. LibWS provides locality efficient and highly scalable work-stealing techniques for load balancing on a variety of data distributions. We also propose a novel communication algorithm for FP-growth data exchange phase, which reduces the communication complexity from state-of-the-art O(p) to O(f + p/f) for p processes and f frequent attributed-ids. FP-Growth is implemented using LibWS and evaluated on several work distributions and support counts. An experimental evaluation of the FP-Growth on LibWS using 4096 processes on an InfiniBand Cluster demonstrates excellent efficiency for several work distributions (87\\% efficiency for Power-law and 91% for Poisson). The proposed distributed FP-Tree merging algorithm provides 38x communication speedup on 4096 cores.

Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

OpenAIRE

Hongling Wei; Zhengwei Chen; Zhenping Wu; Wei Cui; Yuanqi Huang; Weihua Tang

2017-01-01

Ga2O3 with a wide bandgap of ∼ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE) at different substrate temperatures. Th...

Additive Manufacturing of IN100 Superalloy Through Scanning Laser Epitaxy for Turbine Engine Hot-Section Component Repair: Process Development, Modeling, Microstructural Characterization, and Process Control

Science.gov (United States)

Acharya, Ranadip; Das, Suman

2015-09-01

This article describes additive manufacturing (AM) of IN100, a high gamma-prime nickel-based superalloy, through scanning laser epitaxy (SLE), aimed at the creation of thick deposits onto like-chemistry substrates for enabling repair of turbine engine hot-section components. SLE is a metal powder bed-based laser AM technology developed for nickel-base superalloys with equiaxed, directionally solidified, and single-crystal microstructural morphologies. Here, we combine process modeling, statistical design-of-experiments (DoE), and microstructural characterization to demonstrate fully metallurgically bonded, crack-free and dense deposits exceeding 1000 μm of SLE-processed IN100 powder onto IN100 cast substrates produced in a single pass. A combined thermal-fluid flow-solidification model of the SLE process compliments DoE-based process development. A customized quantitative metallography technique analyzes digital cross-sectional micrographs and extracts various microstructural parameters, enabling process model validation and process parameter optimization. Microindentation measurements show an increase in the hardness by 10 pct in the deposit region compared to the cast substrate due to microstructural refinement. The results illustrate one of the very few successes reported for the crack-free deposition of IN100, a notoriously "non-weldable" hot-section alloy, thus establishing the potential of SLE as an AM method suitable for hot-section component repair and for future new-make components in high gamma-prime containing crack-prone nickel-based superalloys.

Scalable Directed Assembly of Highly Crystalline 2,7-Dioctyl[1]benzothieno[3,2- b][1]benzothiophene (C8-BTBT) Films.

Science.gov (United States)

Chai, Zhimin; Abbasi, Salman A; Busnaina, Ahmed A

2018-05-30

Assembly of organic semiconductors with ordered crystal structure has been actively pursued for electronics applications such as organic field-effect transistors (OFETs). Among various film deposition methods, solution-based film growth from small molecule semiconductors is preferable because of its low material and energy consumption, low cost, and scalability. Here, we show scalable and controllable directed assembly of highly crystalline 2,7-dioctyl[1]benzothieno[3,2- b][1]benzothiophene (C8-BTBT) films via a dip-coating process. Self-aligned stripe patterns with tunable thickness and morphology over a centimeter scale are obtained by adjusting two governing parameters: the pulling speed of a substrate and the solution concentration. OFETs are fabricated using the C8-BTBT films assembled at various conditions. A field-effect hole mobility up to 3.99 cm 2 V -1 s -1 is obtained. Owing to the highly scalable crystalline film formation, the dip-coating directed assembly process could be a great candidate for manufacturing next-generation electronics. Meanwhile, the film formation mechanism discussed in this paper could provide a general guideline to prepare other organic semiconducting films from small molecule solutions.

Self-Organized Ni Nanocrystal Embedded in BaTiO3 Epitaxial Film

Directory of Open Access Journals (Sweden)

Ge FF

2010-01-01

Full Text Available Abstract Ni nanocrystals (NCs were embedded in BaTiO3 epitaxial films using the laser molecular beam epitaxy. The processes involving the self-organization of Ni NCs and the epitaxial growth of BaTiO3 were discussed. With the in situ monitoring of reflection high-energy electron diffraction, the nanocomposite films were engineered controllably by the fine alternation of the self-organization of Ni NCs and the epitaxial growth of BaTiO3. The transmission electron microscopy and the X-ray diffraction characterization confirmed that the composite film consists of the Ni NCs layers alternating with the (001/(100-oriented epitaxial BaTiO3 separation layers.

A laboratory investigation on three-sided structures.

Science.gov (United States)

2009-02-01

Egyptian Concrete Co. has recently developed a three-sided structure that adopts the advantages of both flat-top and arch-top threesided : culverts: (1) more convenient and lower cost of manufacturing flat-top culverts and (2) capability of the relat...

Photovoltaic X-ray detectors based on epitaxial GaAs structures

Energy Technology Data Exchange (ETDEWEB)

Achmadullin, R.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Artemov, V.V. [Shubnikov Institute of Crystallography, Russian Academy of Sciences, 59 Leninski pr., Moscow B-333, 117333 (Russian Federation); Dvoryankin, V.F. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation)]. E-mail: vfd217@ire216.msk.su; Dvoryankina, G.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Dikaev, Yu.M. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakov, M.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakova, O.N. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Chmil, V.B. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Holodenko, A.G. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Kudryashov, A.A.; Krikunov, A.I.; Petrov, A.G.; Telegin, A.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Vorobiev, A.P. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation)

2005-12-01

A new type of the photovoltaic X-ray detector based on epitaxial p{sup +}-n-n'-n{sup +} GaAs structures which provides a high efficiency of charge collection in the non-bias operation mode at room temperature is proposed. The GaAs epitaxial structures were grown by vapor-phase epitaxy on heavily doped n{sup +}-GaAs(1 0 0) substrates. The absorption efficiency of GaAs X-ray detector is discussed. I-V and C-V characteristics of the photovoltaic X-ray detectors are analyzed. The built-in electric field profiles in the depletion region of epitaxial structures are measured by the EBIC method. Charge collection efficiency to {alpha}-particles and {gamma}-radiation are measured. The application of X-ray detectors is discussed.

Epitaxial properties of ZnO thin films on SrTiO3 substrates grown by laser molecular beam epitaxy

International Nuclear Information System (INIS)

Wei, X. H.; Li, Y. R.; Zhu, J.; Huang, W.; Zhang, Y.; Luo, W. B.; Ji, H.

2007-01-01

Epitaxial ZnO thin films with different orientations have been grown by laser molecular beam epitaxy on (001)- (011)-, and (111)-orientated SrTiO 3 single-crystal substrates. The growth behavior was in situ monitored by reflection high-energy electron diffraction, and the epitaxial orientation relations were reconfirmed by ex situ x-ray diffraction measurements. In the case of ZnO on SrTiO 3 (001), four orthogonal domains coexisted in the ZnO epilayer, i.e., ZnO(110) parallel SrTiO 3 (001) and ZnO[-111] parallel SrTiO 3 . For (011)- and (111)-orientated substrates, single-domain epitaxy with c axial orientation was observed, in which the in-plane relationship was ZnO[110] parallel SrTiO 3 [110] irrespective of the substrate orientations. Additionally, the crystalline quality of ZnO on SrTiO 3 (111) was better than that of ZnO on SrTiO 3 (011) because of the same symmetry between the (111) substrates and (001) films. The obtained results can be attributed to the difference of the in-plane crystallographic symmetry. Furthermore, those alignments can be explained by the interface stress between the substrates and the films

Field Evaluation of Advances in Energy-Efficiency Practices for Manufactured Homes

Energy Technology Data Exchange (ETDEWEB)

Levy, E. [Advanced Residential Integrated Energy Solutions (ARIES) Collaborative, New York, NY (United States); Dentz, J. [Advanced Residential Integrated Energy Solutions (ARIES) Collaborative, New York, NY (United States); Ansanelli, E. [Advanced Residential Integrated Energy Solutions (ARIES) Collaborative, New York, NY (United States); Barker, G. [Advanced Residential Integrated Energy Solutions (ARIES) Collaborative, New York, NY (United States); Rath, P. [Advanced Residential Integrated Energy Solutions (ARIES) Collaborative, New York, NY (United States); Dadia, D. [Advanced Residential Integrated Energy Solutions (ARIES) Collaborative, New York, NY (United States)

2016-03-01

Through field-testing and analysis, this project evaluated whole-building approaches and estimated the relative contributions of select technologies toward reducing energy use related to space conditioning in new manufactured homes. Three lab houses of varying designs were built and tested side-by-side under controlled conditions in Russellville, Alabama. The tests provided a valuable indicator of how changes in the construction of manufactured homes can contribute to significant reductions in energy use.

Regional Capital Inputs in Chinese Industry and Manufacturing, 1978-2003

NARCIS (Netherlands)

Wang, Lili; Szirmai, Adam

2008-01-01

This paper provides new estimates of capital inputs in the Chinese economy. Estimates are made for the total economy (1953-2003), for the industrial sector (1978-2003) and for the manufacturing sector (1985-2003). The estimates for industry and manufacturing are broken down by thirty regions. The

Application of statistics to VLSI circuit manufacturing : test, diagnosis, and reliability

NARCIS (Netherlands)

Krishnan, Shaji

2017-01-01

Semiconductor product manufacturing companies strive to deliver defect free, and reliable products to their customers. However, with the down-scaling of technology, increasing the throughput at every stage of semiconductor product manufacturing becomes a harder challenge. To avoid process-related

The Concept of Business Model Scalability

DEFF Research Database (Denmark)

Lund, Morten; Nielsen, Christian

2018-01-01

-term pro table business. However, the main message of this article is that while providing a good value proposition may help the rm ‘get by’, the really successful businesses of today are those able to reach the sweet-spot of business model scalability. Design/Methodology/Approach: The article is based...... on a ve-year longitudinal action research project of over 90 companies that participated in the International Center for Innovation project aimed at building 10 global network-based business models. Findings: This article introduces and discusses the term scalability from a company-level perspective......Purpose: The purpose of the article is to de ne what scalable business models are. Central to the contemporary understanding of business models is the value proposition towards the customer and the hypotheses generated about delivering value to the customer which become a good foundation for a long...

Oracle database performance and scalability a quantitative approach

CERN Document Server

Liu, Henry H

2011-01-01

A data-driven, fact-based, quantitative text on Oracle performance and scalability With database concepts and theories clearly explained in Oracle's context, readers quickly learn how to fully leverage Oracle's performance and scalability capabilities at every stage of designing and developing an Oracle-based enterprise application. The book is based on the author's more than ten years of experience working with Oracle, and is filled with dependable, tested, and proven performance optimization techniques. Oracle Database Performance and Scalability is divided into four parts that enable reader

PKI Scalability Issues

OpenAIRE

Slagell, Adam J; Bonilla, Rafael

2004-01-01

This report surveys different PKI technologies such as PKIX and SPKI and the issues of PKI that affect scalability. Much focus is spent on certificate revocation methodologies and status verification systems such as CRLs, Delta-CRLs, CRS, Certificate Revocation Trees, Windowed Certificate Revocation, OCSP, SCVP and DVCS.

On Scalability and Replicability of Smart Grid Projects—A Case Study

Directory of Open Access Journals (Sweden)

Lukas Sigrist

2016-03-01

Full Text Available This paper studies the scalability and replicability of smart grid projects. Currently, most smart grid projects are still in the R&D or demonstration phases. The full roll-out of the tested solutions requires a suitable degree of scalability and replicability to prevent project demonstrators from remaining local experimental exercises. Scalability and replicability are the preliminary requisites to perform scaling-up and replication successfully; therefore, scalability and replicability allow for or at least reduce barriers for the growth and reuse of the results of project demonstrators. The paper proposes factors that influence and condition a project’s scalability and replicability. These factors involve technical, economic, regulatory and stakeholder acceptance related aspects, and they describe requirements for scalability and replicability. In order to assess and evaluate the identified scalability and replicability factors, data has been collected from European and national smart grid projects by means of a survey, reflecting the projects’ view and results. The evaluation of the factors allows quantifying the status quo of on-going projects with respect to the scalability and replicability, i.e., they provide a feedback on to what extent projects take into account these factors and on whether the projects’ results and solutions are actually scalable and replicable.

Epitaxial III-V nanowires on silicon for vertical devices

NARCIS (Netherlands)

Bakkers, E.P.A.M.; Borgström, M.T.; Einden, Van Den W.; Weert, van M.H.M.; Helman, A.; Verheijen, M.A.

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the Vapor-Liquid-Solid (VLS) mechanism with laser ablation as well as metal organic vapor phase epitaxy. The VLS growth enables the fabrication of complex axial and radial

Manipulation of Dirac cones in metal-intercalated epitaxial graphene

Science.gov (United States)

Wang, Cai-Zhuang; Kim, Minsung; Tringides, Michael; Ho, Kai-Ming

Graphene is one of the most attractive materials from both fundamental and practical points of view due to its characteristic Dirac cones. The electronic property of graphene can be modified through the interaction with substrate or another graphene layer as illustrated in few-layer epitaxial graphene. Recently, metal intercalation became an effective method to manipulate the electronic structure of graphene by modifying the coupling between the constituent layers. In this work, we show that the Dirac cones of epitaxial graphene can be manipulated by intercalating rare-earth metals. We demonstrate that rare-earth metal intercalated epitaxial graphene has tunable band structures and the energy levels of Dirac cones as well as the linear or quadratic band dispersion can be controlled depending on the location of the intercalation layer and density. Our results could be important for applications and characterizations of the intercalated epitaxial graphene. Supported by the U.S. DOE-BES under Contract No. DE-AC02-07CH11358.

Study of performance scaling of 22-nm epitaxial delta-doped channel MOS transistor

Science.gov (United States)

Sengupta, Sarmista; Pandit, Soumya

2015-06-01

Epitaxial delta-doped channel (EδDC) profile is a promising approach for extending the scalability of bulk metal oxide semiconductor (MOS) technology for low-power system-on-chip applications. A comparative study between EδDC bulk MOS transistor with gate length Lg = 22 nm and a conventional uniformly doped channel (UDC) bulk MOS transistor, with respect to various digital and analogue performances, is presented. The study has been performed using Silvaco technology computer-aided design device simulator, calibrated with experimental results. This study reveals that at smaller gate length, EδDC transistor outperforms the UDC transistor with respect to various studied performances. The reduced contribution of the lateral electric field in the channel plays the key role in this regard. Further, the carrier mobility in EδDC transistor is higher compared to UDC transistor. For moderate gate and drain bias, the impact ionisation rate of the carriers for EδDC MOS transistor is lower than that of the UDC transistor. In addition, at 22 nm, the performances of a EδDC transistor are competitive to that of an ultra-thin body silicon-on-insulator transistor.

Epitaxial Growth and Cracking Mechanisms of Thermally Sprayed Ceramic Splats

Science.gov (United States)

Chen, Lin; Yang, Guan-jun

2018-02-01

In the present study, the epitaxial growth and cracking mechanisms of thermally sprayed ceramic splats were explored. We report, for the first time, the epitaxial growth of various splat/substrate combinations at low substrate temperatures (100 °C) and large lattice mismatch (- 11.26%). Our results suggest that thermal spray deposition was essentially a liquid-phase epitaxy, readily forming chemical bonding. The interface temperature was also estimated. The results convincingly demonstrated that atoms only need to diffuse and rearrange over a sufficiently short range during extremely rapid solidification. Concurrently, severe cracking occurred in the epitaxial splat/substrate systems, which indicated high tensile stress was produced during splat deposition. The origin of the tensile stress was attributed to the strong constraint of the locally heated substrate by its cold surroundings.

Epitaxial growth of SrTiO3 thin film on Si by laser molecular beam epitaxy

International Nuclear Information System (INIS)

Zhou, X. Y.; Miao, J.; Dai, J. Y.; Chan, H. L. W.; Choy, C. L.; Wang, Y.; Li, Q.

2007-01-01

SrTiO 3 thin films have been deposited on Si (001) wafers by laser molecular beam epitaxy using an ultrathin Sr layer as the template. X-ray diffraction measurements indicated that SrTiO 3 was well crystallized and epitaxially aligned with Si. Cross-sectional observations in a transmission electron microscope revealed that the SrTiO 3 /Si interface was sharp, smooth, and fully crystallized. The thickness of the Sr template was found to be a critical factor that influenced the quality of SrTiO 3 and the interfacial structure. Electrical measurements revealed that the SrTiO 3 film was highly resistive

Growth and characterization of Hg 1– Cd Te epitaxial films by ...

Indian Academy of Sciences (India)

Growth of Hg1–CdTe epitaxial films by a new technique called asymmetric vapour phase epitaxy (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication have ...

An extended systematic mapping study about the scalability of i* Models

Directory of Open Access Journals (Sweden)

Paulo Lima

2016-12-01

Full Text Available i* models have been used for requirements specification in many domains, such as healthcare, telecommunication, and air traffic control. Managing the scalability and the complexity of such models is an important challenge in Requirements Engineering (RE. Scalability is also one of the most intractable issues in the design of visual notations in general: a well-known problem with visual representations is that they do not scale well. This issue has led us to investigate scalability in i* models and its variants by means of a systematic mapping study. This paper is an extended version of a previous paper on the scalability of i* including papers indicated by specialists. Moreover, we also discuss the challenges and open issues regarding scalability of i* models and its variants. A total of 126 papers were analyzed in order to understand: how the RE community perceives scalability; and which proposals have considered this topic. We found that scalability issues are indeed perceived as relevant and that further work is still required, even though many potential solutions have already been proposed. This study can be a starting point for researchers aiming to further advance the treatment of scalability in i* models.

Validation of the manufacturing process used to produce long-acting recombinant factor IX Fc fusion protein.

Science.gov (United States)

McCue, J; Osborne, D; Dumont, J; Peters, R; Mei, B; Pierce, G F; Kobayashi, K; Euwart, D

2014-07-01

Recombinant factor IX Fc (rFIXFc) fusion protein is the first of a new class of bioengineered long-acting factors approved for the treatment and prevention of bleeding episodes in haemophilia B. The aim of this work was to describe the manufacturing process for rFIXFc, to assess product quality and to evaluate the capacity of the process to remove impurities and viruses. This manufacturing process utilized a transferable and scalable platform approach established for therapeutic antibody manufacturing and adapted for production of the rFIXFc molecule. rFIXFc was produced using a process free of human- and animal-derived raw materials and a host cell line derived from human embryonic kidney (HEK) 293H cells. The process employed multi-step purification and viral clearance processing, including use of a protein A affinity capture chromatography step, which binds to the Fc portion of the rFIXFc molecule with high affinity and specificity, and a 15 nm pore size virus removal nanofilter. Process validation studies were performed to evaluate identity, purity, activity and safety. The manufacturing process produced rFIXFc with consistent product quality and high purity. Impurity clearance validation studies demonstrated robust and reproducible removal of process-related impurities and adventitious viruses. The rFIXFc manufacturing process produces a highly pure product, free of non-human glycan structures. Validation studies demonstrate that this product is produced with consistent quality and purity. In addition, the scalability and transferability of this process are key attributes to ensure consistent and continuous supply of rFIXFc. © 2014 The Authors. Haemophilia Published by John Wiley & Sons Ltd.

Scalable Transactions for Web Applications in the Cloud

NARCIS (Netherlands)

Zhou, W.; Pierre, G.E.O.; Chi, C.-H.

2009-01-01

Cloud Computing platforms provide scalability and high availability properties for web applications but they sacrifice data consistency at the same time. However, many applications cannot afford any data inconsistency. We present a scalable transaction manager for NoSQL cloud database services to

Requirements for Scalable Access Control and Security Management Architectures

National Research Council Canada - National Science Library

Keromytis, Angelos D; Smith, Jonathan M

2005-01-01

Maximizing local autonomy has led to a scalable Internet. Scalability and the capacity for distributed control have unfortunately not extended well to resource access control policies and mechanisms...

A method for manufacturing monocrystals

International Nuclear Information System (INIS)

Faure, Jacqueline; Malmejac, Yves; Schaub, Bernard.

1973-01-01

Description is given of a method for manufacturing monocrystals, substantially free of disorder, of a metal showing an allotropic transformation at a temperature lower than its melting point. Monocrystals of the raw metal having undergone a uni-directional solidification are heated to a temperature between the allotropic transformation point and the metal melting point; the monocrystals are maintained in the vicinity of that temperature for a given period of time; they are cooled down to a temperature lower than the allotropic transformation point, then they are annealed and cooled down to room temperature. Such monocrystals are used in neutron monochromators [fr

Enabling Manufacturing Competitiveness and Economic Sustainability : Proceedings of the 4th International Conference on Changeable, Agile, Reconfigurable and Virtual production

CERN Document Server

2012-01-01

The changing manufacturing environment requires more responsive and adaptable manufacturing systems. The theme of the 4th International Conference on Changeable, Agile, Reconfigurable and Virtual production (CARV2011) is “Enabling Manufacturing Competitiveness and Economic Sustainability”. Leading edge research and best implementation practices and experiences, which address these important issues and challenges, are presented. The proceedings include advances in manufacturing systems design, planning, evaluation, control and evolving paradigms such as mass customization, personalization, changeability, re-configurability and flexibility. New and important concepts such as the dynamic product families and platforms, co-evolution of products and systems, and methods for enhancing manufacturing systems’ economic sustainability and prolonging their life to produce more than one product generation are treated. Enablers of change in manufacturing systems, production volume and capability scalability and man...

Scalable cloud without dedicated storage

Science.gov (United States)

Batkovich, D. V.; Kompaniets, M. V.; Zarochentsev, A. K.

2015-05-01

We present a prototype of a scalable computing cloud. It is intended to be deployed on the basis of a cluster without the separate dedicated storage. The dedicated storage is replaced by the distributed software storage. In addition, all cluster nodes are used both as computing nodes and as storage nodes. This solution increases utilization of the cluster resources as well as improves fault tolerance and performance of the distributed storage. Another advantage of this solution is high scalability with a relatively low initial and maintenance cost. The solution is built on the basis of the open source components like OpenStack, CEPH, etc.

Scalable-manufactured randomized glass-polymer hybrid metamaterial for daytime radiative cooling

Science.gov (United States)

Zhai, Yao; Ma, Yaoguang; David, Sabrina N.; Zhao, Dongliang; Lou, Runnan; Tan, Gang; Yang, Ronggui; Yin, Xiaobo

2017-03-01

Passive radiative cooling draws heat from surfaces and radiates it into space as infrared radiation to which the atmosphere is transparent. However, the energy density mismatch between solar irradiance and the low infrared radiation flux from a near-ambient-temperature surface requires materials that strongly emit thermal energy and barely absorb sunlight. We embedded resonant polar dielectric microspheres randomly in a polymeric matrix, resulting in a metamaterial that is fully transparent to the solar spectrum while having an infrared emissivity greater than 0.93 across the atmospheric window. When backed with a silver coating, the metamaterial shows a noontime radiative cooling power of 93 watts per square meter under direct sunshine. More critically, we demonstrated high-throughput, economical roll-to-roll manufacturing of the metamaterial, which is vital for promoting radiative cooling as a viable energy technology.

Nano-islands Based Charge Trapping Memory: A Scalability Study

KAUST Repository

Elatab, Nazek; Saadat, Irfan; Saraswat, Krishna; Nayfeh, Ammar

2017-01-01

Zinc-oxide (ZnO) and zirconia (ZrO2) metal oxides have been studied extensively in the past few decades with several potential applications including memory devices. In this work, a scalability study, based on the ITRS roadmap, is conducted on memory devices with ZnO and ZrO2 nano-islands charge trapping layer. Both nano-islands are deposited using atomic layer deposition (ALD), however, the different sizes, distribution and properties of the materials result in different memory performance. The results show that at the 32-nm node charge trapping memory with 127 ZrO2 nano-islands can provide a 9.4 V memory window. However, with ZnO only 31 nano-islands can provide a window of 2.5 V. The results indicate that ZrO2 nano-islands are more promising than ZnO in scaled down devices due to their higher density, higher-k, and absence of quantum confinement effects.

Nano-islands Based Charge Trapping Memory: A Scalability Study

KAUST Repository

Elatab, Nazek

2017-10-19

Zinc-oxide (ZnO) and zirconia (ZrO2) metal oxides have been studied extensively in the past few decades with several potential applications including memory devices. In this work, a scalability study, based on the ITRS roadmap, is conducted on memory devices with ZnO and ZrO2 nano-islands charge trapping layer. Both nano-islands are deposited using atomic layer deposition (ALD), however, the different sizes, distribution and properties of the materials result in different memory performance. The results show that at the 32-nm node charge trapping memory with 127 ZrO2 nano-islands can provide a 9.4 V memory window. However, with ZnO only 31 nano-islands can provide a window of 2.5 V. The results indicate that ZrO2 nano-islands are more promising than ZnO in scaled down devices due to their higher density, higher-k, and absence of quantum confinement effects.

Side-emitting fiber optic position sensor

Science.gov (United States)

Weiss, Jonathan D [Albuquerque, NM

2008-02-12

A side-emitting fiber optic position sensor and method of determining an unknown position of an object by using the sensor. In one embodiment, a concentrated beam of light source illuminates the side of a side-emitting fiber optic at an unknown axial position along the fiber's length. Some of this side-illuminated light is in-scattered into the fiber and captured. As the captured light is guided down the fiber, its intensity decreases due to loss from side-emission away from the fiber and from bulk absorption within the fiber. By measuring the intensity of light emitted from one (or both) ends of the fiber with a photodetector(s), the axial position of the light source is determined by comparing the photodetector's signal to a calibrated response curve, look-up table, or by using a mathematical model. Alternatively, the side-emitting fiber is illuminated at one end, while a photodetector measures the intensity of light emitted from the side of the fiber, at an unknown position. As the photodetector moves further away from the illuminated end, the detector's signal strength decreases due to loss from side-emission and/or bulk absorption. As before, the detector's signal is correlated to a unique position along the fiber.

Epitaxial growth of ZnO layers on (111) GaAs substrates by laser molecular beam epitaxy

International Nuclear Information System (INIS)

Ding Jian; Zhang Di; Konomi, Takaharu; Saito, Katsuhiko; Guo Qixin

2012-01-01

ZnO layers were grown on (111) GaAs substrates by laser molecular epitaxy at substrate temperatures between 200 and 550 °C. X-ray diffraction analysis revealed that c-axis of ZnO epilayer with a wurtzite structure is perpendicular to the substrate surface. X-ray rocking curves and Raman spectroscopy showed that the crystal quality of ZnO epilayers depends on the substrate temperature during the growth. Strong near-band-edge emission in the UV region without any deep-level emissions was observed from the ZnO epilayers at room temperature. The results indicate that laser molecular beam epitaxy is a promising growth method for obtaining high-quality ZnO layers on (111) GaAs substrates.

Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy

International Nuclear Information System (INIS)

Chen, Yen-Ting; Araki, Tsutomu; Palisaitis, Justinas; Persson, Per O. Å.; Olof Holtz, Per; Birch, Jens; Chen, Li-Chyong; Chen, Kuei-Hsien; Nanishi, Yasushi

2013-01-01

Nucleation mechanism of catalyst-free GaN nanorod grown on Si(111) is investigated by the fabrication of uniform and narrow (<35 nm) nanorods without a pre-defined mask by molecular beam epitaxy. Direct evidences show that the nucleation of GaN nanorods stems from the sidewall of the underlying islands down to the Si(111) substrate, different from commonly reported ones on top of the island directly. Accordingly, the growth and density control of the nanorods is exploited by a “narrow-pass” approach that only narrow nanorod can be grown. The optimal size of surrounding non-nucleation area around single nanorod is estimated as 88 nm

Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Chen, Yen-Ting [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China); Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden); Araki, Tsutomu [Department of Electrical and Electronic Engineering, Ritsumeikan University, 525-8577 Shiga (Japan); Palisaitis, Justinas; Persson, Per O. Å.; Olof Holtz, Per; Birch, Jens [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden); Chen, Li-Chyong [Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan (China); Chen, Kuei-Hsien [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan (China); Nanishi, Yasushi [Global Innovation Research Organization, Ritsumeikan University, 525-8577 Shiga (Japan)

2013-11-11

Nucleation mechanism of catalyst-free GaN nanorod grown on Si(111) is investigated by the fabrication of uniform and narrow (<35 nm) nanorods without a pre-defined mask by molecular beam epitaxy. Direct evidences show that the nucleation of GaN nanorods stems from the sidewall of the underlying islands down to the Si(111) substrate, different from commonly reported ones on top of the island directly. Accordingly, the growth and density control of the nanorods is exploited by a “narrow-pass” approach that only narrow nanorod can be grown. The optimal size of surrounding non-nucleation area around single nanorod is estimated as 88 nm.

80-W cw TEM{sub 00} IR beam generation by use of a laser-diode-side-pumped Nd:YAG rod laser

Energy Technology Data Exchange (ETDEWEB)

Konno, Susumu; Fujikawa, Shuichi; Yasui, Koji [Mitsubishi Electric Corp. Amagasaki, Hyogo (Japan). Advanced Technology R and D Center

1998-03-01

We have demonstrated high-efficient and high-power operation of a diode-side-pumped Nd:YAG rod laser. The laser has a simple and scalable configuration consisting of a diffusive pumping reflector and an advanced cavity configuration for polarization-dependent bifocusing compensation. (author)

Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

Directory of Open Access Journals (Sweden)

S. S. Kushvaha

2014-02-01

Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

Crystallization engineering as a route to epitaxial strain control

Directory of Open Access Journals (Sweden)

Andrew R. Akbashev

2015-10-01

Full Text Available The controlled synthesis of epitaxial thin films offers opportunities for tuning their functional properties via enabling or suppressing strain relaxation. Examining differences in the epitaxial crystallization of amorphous oxide films, we report on an alternate, low-temperature route for strain engineering. Thin films of amorphous Bi–Fe–O were grown on (001SrTiO3 and (001LaAlO3 substrates via atomic layer deposition. In situ X-ray diffraction and X-ray photoelectron spectroscopy studies of the crystallization of the amorphous films into the epitaxial (001BiFeO3 phase reveal distinct evolution profiles of crystallinity with temperature. While growth on (001SrTiO3 results in a coherently strained film, the same films obtained on (001LaAlO3 showed an unstrained, dislocation-rich interface, with an even lower temperature onset of the perovskite phase crystallization than in the case of (001SrTiO3. Our results demonstrate how the strain control in an epitaxial film can be accomplished via its crystallization from the amorphous state.

Influence of the side-by-side arrangement on the performance of a small Savonius wind turbine

Directory of Open Access Journals (Sweden)

Jang Choon-Man

2016-01-01

Full Text Available Scaled-down Savonius turbine rotors arrayed side-by-side are introduced to analyze the effects of design parameters on the performance between turbine rotors. Unsteady flow simulation and experimental measurement have been performed to compare turbine performance and validate the numerical simulation of the turbine rotor. Commercial code, SC/Tetra, which uses an unstructured grid system, has been used to solve the three-dimensional unsteady Reynolds-averaged Navier–Stokes equations. Single turbine rotors and two turbine rotors arrayed side-by-side were numerically analyzed. The distance between rotor tips is 0.5 times the rotor diameter. Throughout the numerical simulation, the power coefficient obtained by the time-averaged result of unsteady flow simulation was found to be in good agreement with the experimental result. A discussion on the design parameters using both a single and arrayed turbine rotors is presented based on the results of the unsteady flow simulation, including the flow field, power coefficient, velocity and vorticity contours.

QUALITY IMPROVEMENT MODEL AT THE MANUFACTURING PROCESS PREPARATION LEVEL

Directory of Open Access Journals (Sweden)

Dusko Pavletic

2009-12-01

Full Text Available The paper expresses base for an operational quality improvement model at the manufacturing process preparation level. A numerous appropriate related quality assurance and improvement methods and tools are identified. Main manufacturing process principles are investigated in order to scrutinize one general model of manufacturing process and to define a manufacturing process preparation level. Development and introduction of the operational quality improvement model is based on a research conducted and results of methods and tools application possibilities in real manufacturing processes shipbuilding and automotive industry. Basic model structure is described and presented by appropriate general algorithm. Operational quality improvement model developed lays down main guidelines for practical and systematic application of quality improvements methods and tools.

Fabrication of high quality GaAs-on-insulator via ion-cut of epitaxial GaAs/Ge heterostructure

Energy Technology Data Exchange (ETDEWEB)

Chang, Yongwei; Zhang, Miao [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Deng, Chuang; Men, Chuanling [School of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093 (China); Chen, Da [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Zhu, Lei; Yu, Wenjie; Wei, Xing [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Di, Zengfeng, E-mail: zfdi@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Wang, Xi [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2015-08-15

Highlights: • GaAs-on-insulator has been achieved by integrating of epitaxy, ion-cut and selective chemical etching. • Superior to the direct ion-cut of bulk GaAs layer with the H implantation fluence 2.0 × 10{sup 17} cm{sup −2}, the fabrication of GaAs-on-insulator by the transfer of GaAs/Ge heterostructure only needs H implantation fluence as low as 0.8 × 10{sup 17} cm{sup −2}. • The crystalline quality of the top GaAs layer of the final GaAs-on-insulator wafer is not affected by the implantation process and comparable to the as-grown status. - Abstract: Due to the extraordinary electron mobility, III–V compounds are considered as the ideal candidate channel materials for future electronic devices. In this study, a novel approach for the fabrication of high-crystalline quality GaAs-on-insulator has been proposed by integrating of ion-cut and selective chemical etching. GaAs layer with good crystalline quality has been epitaxially grown on Ge by molecular beam epitaxy (MBE). With H implantation and wafer bonding process, the GaAs/Ge heterostructure is transferred onto silicon dioxide wafer after the proper thermal treatment. Superior to the direct ion-cut of GaAs layer, which requires the H implantation fluence as high as 2.0 × 10{sup 17} cm{sup −2}, the transfer of GaAs/Ge heterostructure in the present study only needs the implantation of 0.8 × 10{sup 17} cm{sup −2} H ions. GaAs-on-insulator structure was successfully achieved by the selective chemical etching of defective Ge layer using SF{sub 6} plasma. As the GaAs/Ge heterostructure can be easily epitaxy grown on silicon platform, the proposed approach for GaAs-on-insulator manufacturing is rather compatible with mature Si integrated circuits (ICs) technology and thus can be integrated to push the microelectronic technology to post-Si era.

Fabrication of high quality GaAs-on-insulator via ion-cut of epitaxial GaAs/Ge heterostructure

International Nuclear Information System (INIS)

Chang, Yongwei; Zhang, Miao; Deng, Chuang; Men, Chuanling; Chen, Da; Zhu, Lei; Yu, Wenjie; Wei, Xing; Di, Zengfeng; Wang, Xi

2015-01-01

Highlights: • GaAs-on-insulator has been achieved by integrating of epitaxy, ion-cut and selective chemical etching. • Superior to the direct ion-cut of bulk GaAs layer with the H implantation fluence 2.0 × 10 17 cm −2 , the fabrication of GaAs-on-insulator by the transfer of GaAs/Ge heterostructure only needs H implantation fluence as low as 0.8 × 10 17 cm −2 . • The crystalline quality of the top GaAs layer of the final GaAs-on-insulator wafer is not affected by the implantation process and comparable to the as-grown status. - Abstract: Due to the extraordinary electron mobility, III–V compounds are considered as the ideal candidate channel materials for future electronic devices. In this study, a novel approach for the fabrication of high-crystalline quality GaAs-on-insulator has been proposed by integrating of ion-cut and selective chemical etching. GaAs layer with good crystalline quality has been epitaxially grown on Ge by molecular beam epitaxy (MBE). With H implantation and wafer bonding process, the GaAs/Ge heterostructure is transferred onto silicon dioxide wafer after the proper thermal treatment. Superior to the direct ion-cut of GaAs layer, which requires the H implantation fluence as high as 2.0 × 10 17 cm −2 , the transfer of GaAs/Ge heterostructure in the present study only needs the implantation of 0.8 × 10 17 cm −2 H ions. GaAs-on-insulator structure was successfully achieved by the selective chemical etching of defective Ge layer using SF 6 plasma. As the GaAs/Ge heterostructure can be easily epitaxy grown on silicon platform, the proposed approach for GaAs-on-insulator manufacturing is rather compatible with mature Si integrated circuits (ICs) technology and thus can be integrated to push the microelectronic technology to post-Si era

Scalable human ES culture for therapeutic use: propagation, differentiation, genetic modification and regulatory issues.

Science.gov (United States)

Rao, M

2008-01-01

Embryonic stem cells unlike most adult stem cell populations can replicate indefinitely while preserving genetic, epigenetic, mitochondrial and functional profiles. ESCs are therefore an excellent candidate cell type for providing a bank of cells for allogenic therapy and for introducing targeted genetic modifications for therapeutic intervention. This ability of prolonged self-renewal of stem cells and the unique advantages that this offers for gene therapy, discovery efforts, cell replacement, personalized medicine and other more direct applications requires the resolution of several important manufacturing, gene targeting and regulatory issues. In this review, we assess some of the advance made in developing scalable culture systems, improvement in vector design and gene insertion technology and the changing regulatory landscape.

Optimizing Bandwidth Limited Problems Using One-SidedCommunication and Overlap

Energy Technology Data Exchange (ETDEWEB)

Bell, Christian; Bonachea, Dan; Nishtala, Rajesh; Yelick, Katherine

2005-10-14

Partitioned Global Address Space languages like Unified Parallel C (UPC) are typically valued for their expressiveness, especially for computations with fine-grained random accesses. In this paper we show that the one-sided communication model used in these languages also has a significant performance advantage for bandwidth-limited applications. We demonstrate this benefit through communication microbenchmarks and a case-study that compares UPC and MPI implementations of the NAS Fourier Transform (FT) benchmark. Our optimizations rely on aggressively overlapping communication with computation but spreading communication events throughout the course of the local computation. This alleviates the potential communication bottleneck that occurs when the communication is packed into a single phase (e.g., the large all-to-all in a multidimensional FFT). Even though the new algorithms require more messages for the same total volume of data, the resulting overlap leads to speedups of over 1.75x and 1.9x for the two-sided and one-sided implementations, respectively, when compared to the default NAS Fortran/MPI release. Our best one-sided implementations show an average improvement of 15 percent over our best two-sided implementations. We attribute this difference to the lower software overhead of one-sided communication, which is partly fundamental to the semantic difference between one-sided and two-sided communication. Our UPC results use the Berkeley UPC compiler with the GASNet communication system, and demonstrate the portability and scalability of that language and implementation, with performance approaching 0.5TFlop/s on the FT benchmark running on 512 processors.

Resistivity of epitaxial copper nanolines with trapezoidal cross-section

International Nuclear Information System (INIS)

Lu, Zonghuan; Frey, David M.; Merkh, Thomas; Lord, Robert; Washington, Morris A.; Lu, Toh-Ming

2016-01-01

The resistivity of epitaxial Cu nanolines with line width ranging from 20 to 180 nm and line height from 40 to 50 nm was measured using a four-point probe technique. The Cu nanolines were fabricated using ebeam lithography with a polymethyl methacrylate bilayer resist system for improved line edge smoothness. The cross-section profile of the lines was examined using the focused ion beam milling technique. The results indicate that the cross-section should be more accurately described as trapezoidal rather than as rectangular. Using the trapezoidal profile, the electrical resistivity was calculated from the measured resistance data. Modeling based on the Fuchs–Sondheimer (FS) theory using the trapezoidal profile was also carried out. The results were compared with the experimentally calculated resistivity data. For Cu lines with line width less than 30 nm, the measured resistivity was shown to be up to 20% higher than the value predicted by the FS theory. Further examination of Cu lines using atomic force microscopy and scanning electron microscopy was conducted to extract the surface roughness and line edge roughness information. Their contribution to the resistivity increase was estimated to be only up to 3% for the Cu nanolines fabricated, which did not significantly contribute to the overall resistivity for Cu lines with line width less than 30 nm. Other possible factors affecting the resistivity of the Cu nanolines were also discussed, including the oxide formation on the surface of the Cu lines. - Highlights: • Epitaxial copper nanolines were fabricated using ebeam lithography. • The effect of line cross-section profiles on electrical resistivity was studied. • Trapezoidal cross−section gives better resistivity estimation for lines down to 20 nm. • Impact of surface roughness and line edge roughness to resistivity is small. • Oxidization layer has an effect on the resistivity increase.

Additive Manufacturing of Low Cost Upper Stage Propulsion Components

Science.gov (United States)

Protz, Christopher; Bowman, Randy; Cooper, Ken; Fikes, John; Taminger, Karen; Wright, Belinda

2014-01-01

NASA is currently developing Additive Manufacturing (AM) technologies and design tools aimed at reducing the costs and manufacturing time of regeneratively cooled rocket engine components. These Low Cost Upper Stage Propulsion (LCUSP) tasks are funded through NASA's Game Changing Development Program in the Space Technology Mission Directorate. The LCUSP project will develop a copper alloy additive manufacturing design process and develop and optimize the Electron Beam Freeform Fabrication (EBF3) manufacturing process to direct deposit a nickel alloy structural jacket and manifolds onto an SLM manufactured GRCop chamber and Ni-alloy nozzle. In order to develop these processes, the project will characterize both the microstructural and mechanical properties of the SLMproduced GRCop-84, and will explore and document novel design techniques specific to AM combustion devices components. These manufacturing technologies will be used to build a 25K-class regenerative chamber and nozzle (to be used with tested DMLS injectors) that will be tested individually and as a system in hot fire tests to demonstrate the applicability of the technologies. These tasks are expected to bring costs and manufacturing time down as spacecraft propulsion systems typically comprise more than 70% of the total vehicle cost and account for a significant portion of the development schedule. Additionally, high pressure/high temperature combustion chambers and nozzles must be regeneratively cooled to survive their operating environment, causing their design to be time consuming and costly to build. LCUSP presents an opportunity to develop and demonstrate a process that can infuse these technologies into industry, build competition, and drive down costs of future engines.

Photon confinement in high-efficiency, thin-film III-V solar cells obtained by epitaxial lift-off

International Nuclear Information System (INIS)

Schermer, J.J.; Bauhuis, G.J.; Mulder, P.; Haverkamp, E.J.; Deelen, J. van; Niftrik, A.T.J. van; Larsen, P.K.

2006-01-01

Using the epitaxial lift-off (ELO) technique, a III-V device structure can be separated from its GaAs substrate by selective wet etching of a thin release layer. The thin-film structures obtained by the ELO process can be cemented or van der Waals bonded on arbitrary smooth surface carriers for further processing. It is shown that the ELO method, initially able to separate millimetre-sized GaAs layers with a lateral etch rate of about 1 mm/h, has been developed to a process capable to free the entire 2-in. epitaxial structures from their substrates with etch rates up to 30 mm/h. With these characteristics the method has a large potential for the production of high efficiency thin-film solar cells. By choosing the right deposition and ELO strategy, the thin-film III-V cells can be adequately processed on both sides allowing for an entire range of new cell structures. In the present work, the performance of semi-transparent bifacial solar cells, produced by the deposition of metal grid contacts on both sides, was evaluated. Reflection of light at the rear side of the bifacial GaAs solar cells was found to result in an enhanced collection probability of the photon-induced carriers compared to that of regular III-V cells on a GaAs substrate. To enhance this effect, thin-film GaAs cells with gold mirror back contacts were prepared. Even in their present premature stage of development, these single-junction thin-film cells reached a record efficiency of 24.5% which is already very close to the 24.9% efficiency that was obtained with a regular GaAs cell on a GaAs substrate. From this it could be concluded that, as a result of the photon confinement, ELO cells require a significantly thinner base layer than regular GaAs cells while at the same time they have the potential to reach a higher efficiency

Growth and characterization of Hg1–xCdxTe epitaxial films by ...

Indian Academy of Sciences (India)

Unknown

Abstract. Growth of Hg1–xCdxTe epitaxial films by a new technique called asymmetric vapour phase epitaxy. (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication.

Few layer epitaxial germanene: a novel two-dimensional Dirac material

Science.gov (United States)

Dávila, María Eugenia; Le Lay, Guy

2016-02-01

Monolayer germanene, a novel graphene-like germanium allotrope akin to silicene has been recently grown on metallic substrates. Lying directly on the metal surfaces the reconstructed atom-thin sheets are prone to lose the massless Dirac fermion character and unique associated physical properties of free standing germanene. Here, we show that few layer germanene, which we create by dry epitaxy on a gold template, possesses Dirac cones thanks to a reduced interaction. This finding established on synchrotron-radiation-based photoemission, scanning tunneling microscopy imaging and surface electron diffraction places few layer germanene among the rare two-dimensional Dirac materials. Since germanium is currently used in the mainstream Si-based electronics, perspectives of using germanene for scaling down beyond the 5 nm node appear very promising. Other fascinating properties seem at hand, typically the robust quantum spin Hall effect for applications in spintronics and the engineering of Floquet Majorana fermions by light for quantum computing.

Few layer epitaxial germanene: a novel two-dimensional Dirac material.

Science.gov (United States)

Dávila, María Eugenia; Le Lay, Guy

2016-02-10

Monolayer germanene, a novel graphene-like germanium allotrope akin to silicene has been recently grown on metallic substrates. Lying directly on the metal surfaces the reconstructed atom-thin sheets are prone to lose the massless Dirac fermion character and unique associated physical properties of free standing germanene. Here, we show that few layer germanene, which we create by dry epitaxy on a gold template, possesses Dirac cones thanks to a reduced interaction. This finding established on synchrotron-radiation-based photoemission, scanning tunneling microscopy imaging and surface electron diffraction places few layer germanene among the rare two-dimensional Dirac materials. Since germanium is currently used in the mainstream Si-based electronics, perspectives of using germanene for scaling down beyond the 5 nm node appear very promising. Other fascinating properties seem at hand, typically the robust quantum spin Hall effect for applications in spintronics and the engineering of Floquet Majorana fermions by light for quantum computing.

Enhancing Scalability of Sparse Direct Methods

International Nuclear Information System (INIS)

Li, Xiaoye S.; Demmel, James; Grigori, Laura; Gu, Ming; Xia, Jianlin; Jardin, Steve; Sovinec, Carl; Lee, Lie-Quan

2007-01-01

TOPS is providing high-performance, scalable sparse direct solvers, which have had significant impacts on the SciDAC applications, including fusion simulation (CEMM), accelerator modeling (COMPASS), as well as many other mission-critical applications in DOE and elsewhere. Our recent developments have been focusing on new techniques to overcome scalability bottleneck of direct methods, in both time and memory. These include parallelizing symbolic analysis phase and developing linear-complexity sparse factorization methods. The new techniques will make sparse direct methods more widely usable in large 3D simulations on highly-parallel petascale computers

Modular Universal Scalable Ion-trap Quantum Computer

Science.gov (United States)

2016-06-02

SECURITY CLASSIFICATION OF: The main goal of the original MUSIQC proposal was to construct and demonstrate a modular and universally- expandable ion...Distribution Unlimited UU UU UU UU 02-06-2016 1-Aug-2010 31-Jan-2016 Final Report: Modular Universal Scalable Ion-trap Quantum Computer The views...P.O. Box 12211 Research Triangle Park, NC 27709-2211 Ion trap quantum computation, scalable modular architectures REPORT DOCUMENTATION PAGE 11

Scalable and Media Aware Adaptive Video Streaming over Wireless Networks

Directory of Open Access Journals (Sweden)

Béatrice Pesquet-Popescu

2008-07-01

Full Text Available This paper proposes an advanced video streaming system based on scalable video coding in order to optimize resource utilization in wireless networks with retransmission mechanisms at radio protocol level. The key component of this system is a packet scheduling algorithm which operates on the different substreams of a main scalable video stream and which is implemented in a so-called media aware network element. The concerned type of transport channel is a dedicated channel subject to parameters (bitrate, loss rate variations on the long run. Moreover, we propose a combined scalability approach in which common temporal and SNR scalability features can be used jointly with a partitioning of the image into regions of interest. Simulation results show that our approach provides substantial quality gain compared to classical packet transmission methods and they demonstrate how ROI coding combined with SNR scalability allows to improve again the visual quality.

Canadian Manufacturing Malaise: Three Hypotheses

Directory of Open Access Journals (Sweden)

Matt Krzepkowski

2013-03-01

Full Text Available The danger in politicians promoting the idea that “Dutch Disease” is responsible for the decline of the Ontario manufacturing sector is that the suggestion implies that Canada’s manufacturing sector will bounce back if only we could slow down oil sands development, or if the Canadian dollar were to devalue. In reality, evidence suggests that the decline in Ontario manufacturing is the result of long-term structural changes in the economy, independent of the rise of the country’s natural-resource sector and the rising dollar. And the sooner policymakers realize that, and stop blaming the decline in manufacturing on Dutch Disease (which holds that a booming natural-resource sector that drives up our dollar makes our manufacturing exports less competitive the sooner they can get to work on helping manufacturing-dependent regions transition to the evolving economy. A closer analysis of Canada’s manufacturing sector shows that jobs in that sector have been disappearing across the country since the end of the Second World War, with the sector’s share of employment falling dramatically well before rapid development began to take hold in the oil sands, and back when Canada’s dollar was still worth far less than the American dollar. It is a trend that has been occurring among most of our OECD peers, including the United States, which may be due to the widespread reallocation of production to lower cost countries. But it is also true that Canada’s manufacturing productivity performance in particular has been declining for a generation, with especially poor performance in the last decade, when labour productivity in Canada grew at just a quarter of the U.S. rate. Meanwhile, capital investment that may have improved the competitiveness of Canadian manufacturing has been anemic. Yet there is no particular reason to lament the scaling-down of manufacturing jobs in Ontario. The province remains just as economically important, as a share of

Design issues for numerical libraries on scalable multicore architectures

International Nuclear Information System (INIS)

Heroux, M A

2008-01-01

Future generations of scalable computers will rely on multicore nodes for a significant portion of overall system performance. At present, most applications and libraries cannot exploit multiple cores beyond running addition MPI processes per node. In this paper we discuss important multicore architecture issues, programming models, algorithms requirements and software design related to effective use of scalable multicore computers. In particular, we focus on important issues for library research and development, making recommendations for how to effectively develop libraries for future scalable computer systems

Growth of pseudomorphic structures through organic epitaxy

International Nuclear Information System (INIS)

Kaviyil, Sreejith Embekkat; Sassella, Adele; Borghesi, Alessandro; Campione, Marcello; Su Genbo; He Youping; Chen Chenjia

2012-01-01

The control of molecular orientation in thin solid film phases of organic semiconductors is a basic factor for the exploitation of their physical properties for optoelectronic devices. We compare structural and optical properties of thin films of the organic semiconductor α-quarterthiophene grown by molecular beam epitaxy on different organic substrates. We show how epitactic interactions, characteristic of the surface of organic crystals, can drive the orientation of the crystalline overlayer and the selection of specific polymorphs and new pseudomorphic phases. We identify a key role in this phenomenon played by the marked groove-like corrugations present in some organic crystal surfaces. Since different polymorphs possess rather different performance in terms of, e.g., charge carrier mobility, this strategy is demonstrated to allow for the growth of oriented phases with enhanced physical properties, while keeping the substrate at room temperature. These results provide useful guidelines for the design of technological substrates for organic epitaxy and they substantiate the adoption of an organic epitaxy approach for the fabrication of optoelectronic devices based on thin films of organic semiconductors.

Design and performance verification of a wideband scalable dual-polarized probe for spherical near-field antenna measurements

DEFF Research Database (Denmark)

Pivnenko, Sergey; Kim, Oleksiy S.; Nielsen, Jeppe Majlund

2012-01-01

A wideband scalable dual-polarized probe designed by the Electromagnetic Systems group at the Technical University of Denmark is presented. The design was scaled and two probes were manufactured for the frequency bands 1-3 GHz and 0.4-1.2 GHz. The results of the acceptance tests of the 0.4-1.2 GHz...... probe are briefly discussed. Since these probes represent so-called higher-order antennas, applicability of the recently developed higher-order probe correction technique [3] for these probes was investigated. Extensive tests were carried out for two representative antennas under test using...

Microwave dynamics of YBCO bi-epitaxial Josephson structures

DEFF Research Database (Denmark)

Constantinian, K. Y.; Ovsyannikov, G. A.; Mashtakov, A. D.

1996-01-01

The processes of interaction of microwaves (frequency View the MathML source) with a single high-Tc superconducting YBa2Cu3Ox (YBCO) bi-epitaxial grain-boundary junction and with an array of two junctions connected in series, have been investigated experimentally at temperatures T = 4.2− 77 K......, as well as the subharmonic detector response at weak magnetic fields φ microwave field induced frequency synchronization of two series connected bi-epitaxial YBCO junctions....

Manufacturing Capital Lingers in the Stock Market

Institute of Scientific and Technical Information of China (English)

吴程涛; 段铸; 张景宇; 张曙光

2008-01-01

Pressured by a slowdown in exports, cost increases and dwindling returns to manufacturing investments, China’s manufacturing capital has begun to shift to the real-estate and stock markets. As a matter of fact, the stock market had already felt a shock a couple of years ago when top domestic manufacturers like Midea, Gree, TCL and LMZ started to invest their idle capital in the real-estate and stock markets. Investments of manufacturing capital in both the real estate and stock markets have increased fluid capital and pushed up the value of both markets. Booms in both markets have in turn guaranteed investment returns of manufacturing capital, which further increased the stock market valuations of manufacturing capital. Such a cycle has created interest chains between listed manufacturers, the stock market and the real-estate market. Along with the ups and downs of the stock and real-estate markets, manufacturing capital now faces a dilemma: to escape or to persist? Where should it escape? When can the markets be profitable again? Just like the classic Shakespearean question: to be or not to be, that is the question.

Integrated double-sided silicon microstrip detectors

Directory of Open Access Journals (Sweden)

Perevertailo V. L.

2011-11-01

Full Text Available The problems of design, technology and manufacturing double-sided silicon microstrip detectors using standard equipment production line in mass production of silicon integrated circuits are considered. The design of prototype high-energy particles detector for experiment ALICE (CERN is presented. The parameters of fabricated detectors are comparable with those of similar foreign detectors, but they are distinguished by lesser cost.

Ion beam induced epitaxy in Ge- and B- coimplanted silicon

International Nuclear Information System (INIS)

Hayashi, N.; Hasegawa, M.; Tanoue, H.; Takahashi, H.; Shimoyama, K.; Kuriyama, K.

1992-01-01

The epitaxial regrowth of amorphous surface layers in and Si substrate has been studied under irradiation with 400 keV Ar + ions at the temperature range from 300 to 435degC. The amorphous layers were obtained by Ge + implantation, followed by B + implantation. The ion beam assisted epitaxy was found to be sensitive to both the substrate orientation and the implanted Ge concentration, and the layer-by-layer epitaxial regrowth seemed to be precluded in Si layers with high doses of Ge implants, e.g., 2.5 x 10 15 ions/cm 2 . Electrical activation of implanted dopant B was also measured in the recrystallized Si layer. (author)

Scuba: scalable kernel-based gene prioritization.

Science.gov (United States)

Zampieri, Guido; Tran, Dinh Van; Donini, Michele; Navarin, Nicolò; Aiolli, Fabio; Sperduti, Alessandro; Valle, Giorgio

2018-01-25

The uncovering of genes linked to human diseases is a pressing challenge in molecular biology and precision medicine. This task is often hindered by the large number of candidate genes and by the heterogeneity of the available information. Computational methods for the prioritization of candidate genes can help to cope with these problems. In particular, kernel-based methods are a powerful resource for the integration of heterogeneous biological knowledge, however, their practical implementation is often precluded by their limited scalability. We propose Scuba, a scalable kernel-based method for gene prioritization. It implements a novel multiple kernel learning approach, based on a semi-supervised perspective and on the optimization of the margin distribution. Scuba is optimized to cope with strongly unbalanced settings where known disease genes are few and large scale predictions are required. Importantly, it is able to efficiently deal both with a large amount of candidate genes and with an arbitrary number of data sources. As a direct consequence of scalability, Scuba integrates also a new efficient strategy to select optimal kernel parameters for each data source. We performed cross-validation experiments and simulated a realistic usage setting, showing that Scuba outperforms a wide range of state-of-the-art methods. Scuba achieves state-of-the-art performance and has enhanced scalability compared to existing kernel-based approaches for genomic data. This method can be useful to prioritize candidate genes, particularly when their number is large or when input data is highly heterogeneous. The code is freely available at https://github.com/gzampieri/Scuba .

Building scalable apps with Redis and Node.js

CERN Document Server

Johanan, Joshua

2014-01-01

If the phrase scalability sounds alien to you, then this is an ideal book for you. You will not need much Node.js experience as each framework is demonstrated in a way that requires no previous knowledge of the framework. You will be building scalable Node.js applications in no time! Knowledge of JavaScript is required.

Scalable shared-memory multiprocessing

CERN Document Server

Lenoski, Daniel E

1995-01-01

Dr. Lenoski and Dr. Weber have experience with leading-edge research and practical issues involved in implementing large-scale parallel systems. They were key contributors to the architecture and design of the DASH multiprocessor. Currently, they are involved with commercializing scalable shared-memory technology.

Quality assurance in tube manufacture

International Nuclear Information System (INIS)

Depken, H.

1976-01-01

Reliability in service essential for many high-technology products fabricated today. This is particularly the case within the nuclear industry. Here defective materials or components may have diastrous consequences to the safety of human beings and the environment. A new concept - Quality Assurance - originates from this industry. The concept implies that all contractors, fabricators and material manufactures involved must prove that the quality control system used, fulfits particular requirements at all manufacturing, inspection and testing stages. These requirement are laid down in two standards issued by the U.S. Atomic Energy Commission and the American Society of Mechanical Engineers. These standards are discussed in the paper. As a manufacturer of steel products for nuclear applications Sandvik has been forced to establish a quality assurance system according to these principles. The Sandvik approach is briefly described with regard to organisation and other major quality assurance activities. Further the education and training of operators and technicians is touched upon. Finally some viewpoints regarding audits performed by customers of steel manufacturers are expressed. (author)

A scalable healthcare information system based on a service-oriented architecture.

Science.gov (United States)

Yang, Tzu-Hsiang; Sun, Yeali S; Lai, Feipei

2011-06-01

Many existing healthcare information systems are composed of a number of heterogeneous systems and face the important issue of system scalability. This paper first describes the comprehensive healthcare information systems used in National Taiwan University Hospital (NTUH) and then presents a service-oriented architecture (SOA)-based healthcare information system (HIS) based on the service standard HL7. The proposed architecture focuses on system scalability, in terms of both hardware and software. Moreover, we describe how scalability is implemented in rightsizing, service groups, databases, and hardware scalability. Although SOA-based systems sometimes display poor performance, through a performance evaluation of our HIS based on SOA, the average response time for outpatient, inpatient, and emergency HL7Central systems are 0.035, 0.04, and 0.036 s, respectively. The outpatient, inpatient, and emergency WebUI average response times are 0.79, 1.25, and 0.82 s. The scalability of the rightsizing project and our evaluation results show that the SOA HIS we propose provides evidence that SOA can provide system scalability and sustainability in a highly demanding healthcare information system.

Characterization of GaN/AlGaN epitaxial layers grown

Indian Academy of Sciences (India)

GaN and AlGaN epitaxial layers are grown by a metalorganic chemical vapour deposition (MOCVD) system. The crystalline quality of these epitaxially grown layers is studied by different characterization techniques. PL measurements indicate band edge emission peak at 363.8 nm and 312 nm for GaN and AlGaN layers ...

JPEG2000-Compatible Scalable Scheme for Wavelet-Based Video Coding

Directory of Open Access Journals (Sweden)

Thomas André

2007-03-01

Full Text Available We present a simple yet efficient scalable scheme for wavelet-based video coders, able to provide on-demand spatial, temporal, and SNR scalability, and fully compatible with the still-image coding standard JPEG2000. Whereas hybrid video coders must undergo significant changes in order to support scalability, our coder only requires a specific wavelet filter for temporal analysis, as well as an adapted bit allocation procedure based on models of rate-distortion curves. Our study shows that scalably encoded sequences have the same or almost the same quality than nonscalably encoded ones, without a significant increase in complexity. A full compatibility with Motion JPEG2000, which tends to be a serious candidate for the compression of high-definition video sequences, is ensured.

JPEG2000-Compatible Scalable Scheme for Wavelet-Based Video Coding

Directory of Open Access Journals (Sweden)

André Thomas

2007-01-01

Full Text Available We present a simple yet efficient scalable scheme for wavelet-based video coders, able to provide on-demand spatial, temporal, and SNR scalability, and fully compatible with the still-image coding standard JPEG2000. Whereas hybrid video coders must undergo significant changes in order to support scalability, our coder only requires a specific wavelet filter for temporal analysis, as well as an adapted bit allocation procedure based on models of rate-distortion curves. Our study shows that scalably encoded sequences have the same or almost the same quality than nonscalably encoded ones, without a significant increase in complexity. A full compatibility with Motion JPEG2000, which tends to be a serious candidate for the compression of high-definition video sequences, is ensured.

Removable polytetrafluoroethylene template based epitaxy of ferroelectric copolymer thin films

Science.gov (United States)

Xia, Wei; Chen, Qiusong; Zhang, Jian; Wang, Hui; Cheng, Qian; Jiang, Yulong; Zhu, Guodong

2018-04-01

In recent years ferroelectric polymers have shown their great potentials in organic and flexible electronics. To meet the requirements of high-performance and low energy consumption of novel electronic devices and systems, structural and electrical properties of ferroelectric polymer thin films are expected to be further optimized. One possible way is to realize epitaxial growth of ferroelectric thin films via removable high-ordered polytetrafluoroethylene (PTFE) templates. Here two key parameters in epitaxy process, annealing temperature and applied pressure, are systematically studied and thus optimized through structural and electrical measurements of ferroelectric copolymer thin films. Experimental results indicate that controlled epitaxial growth is realized via suitable combination of both parameters. Annealing temperature above the melting point of ferroelectric copolymer films is required, and simultaneously moderate pressure (around 2.0 MPa here) should be applied. Over-low pressure (around 1.0 MPa here) usually results in the failure of epitaxy process, while over-high pressure (around 3.0 MPa here) often results in residual of PTFE templates on ferroelectric thin films.

Laser Welding of Silicon Foils for Thin-Film Solar Cell Manufacturing

OpenAIRE

Heßmann, Maik

2014-01-01

Thin-film solar module manufacturing is one of the most promising recent developments in photovoltaic research and has the potential to reduce production costs. As the necessity for competitive prices on the world market increases and manufacturers endeavor to bring down the cost of solar modules, thin-film technology is becoming more and more attractive. In this work a special technique was investigated which makes solar cell manufacturing more compatible with an industrial roll-to-roll proc...

Plasticity and microstructure of epitaxial Ag/Ni multilayers; Mechanische Eigenschaften und Mikrostruktur epitaktischer Ag/Ni-Multilagenschichten

Energy Technology Data Exchange (ETDEWEB)

Schmidt, Tobias K.

2007-10-15

To meet the still increasing technical demands of new materials, it is required to improve basic knowledge of thin films and multilayers. This thesis describes the microstructure and mechanical behaviour of thin epitaxial Ag/Ni-multilayers. Former investigations were only done on polycrystalline multilayers or epitaxial single layers. The manufacture of epitaxial Ag/Ni-multilayers on (111) orientated Si-substrates was performed by a magnetron sputtering technique under ultra high vacuum (UHV). The thickness of the alternating Ag- and Ni-layers varies between 100 and 400 nm, the thickness of the whole film varies between 200 and 800 nm. Hardness and flow stress of Ag/Ni-multilayers were measured with a nanoindentation technique, a substrate curvature method and by X-ray diffraction. The hardness of these multilayers varies between 1.5 and 2.0 GPa. The Ag single film hardness is 0.5 GPa and Ni film 1.8 GPa. The flow stress of the Ag/Ni-multilayers varies between 350 and 800 MPa. The Ag single layer shows a flow stress of 100 MPa and Ni of 450 MPa. Both hardness and flow stress increase with decreasing layer thickness. In situ TEM and HRTEM experiments showed a semicoherent Ag/Ni-interface. It was observed that these interfaces act as sources and sinks. Dislocation loops formed at the interface expand and shrink according to the stress state. They combine with loops from the opposite interface or with the interface itself and form threading dislocations. Dislocation loops penetrating an interface were not observed. Results were compared with various models which simulate flow stress in thin films and multilayers. The most important models are calculated by Nix-Freund, the Source-model after von Blanckenhagen and the Hall-Petch-model. (orig.)

Enhancing cell and gene therapy manufacture through the application of advanced fluorescent optical sensors (Review).

Science.gov (United States)

Harrison, Richard P; Chauhan, Veeren M

2017-12-15

Cell and gene therapies (CGTs) are examples of future therapeutics that can be used to cure or alleviate the symptoms of disease, by repairing damaged tissue or reprogramming defective genetic information. However, despite the recent advancements in clinical trial outcomes, the path to wide-scale adoption of CGTs remains challenging, such that the emergence of a "blockbuster" therapy has so far proved elusive. Manufacturing solutions for these therapies require the application of scalable and replicable cell manufacturing techniques, which differ markedly from the existing pharmaceutical incumbent. Attempts to adopt this pharmaceutical model for CGT manufacture have largely proved unsuccessful. The most significant challenges facing CGT manufacturing are process analytical testing and quality control. These procedures would greatly benefit from improved sensory technologies that allow direct measurement of critical quality attributes, such as pH, oxygen, lactate and glucose. In turn, this would make manufacturing more robust, replicable and standardized. In this review, the present-day state and prospects of CGT manufacturing are discussed. In particular, the authors highlight the role of fluorescent optical sensors, focusing on their strengths and weaknesses, for CGT manufacture. The review concludes by discussing how the integration of CGT manufacture and fluorescent optical sensors could augment future bioprocessing approaches.

Deposition of HgTe by electrochemical atomic layer epitaxy (EC-ALE)

CSIR Research Space (South Africa)

Venkatasamy, V

2006-04-01

Full Text Available This paper describes the first instance of HgTe growth by electrochemical atomic layer epitaxy (EC-ALE). EC-ALE is the electrochemical analog of atomic layer epitaxy (ALE) and atomic layer deposition (ALD), all of which are based on the growth...

Scalable control program for multiprecursor flow-type atomic layer deposition system

Energy Technology Data Exchange (ETDEWEB)

Selvaraj, Sathees Kannan [Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Takoudis, Christos G., E-mail: takoudis@uic.edu [Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 and Department of Bioengineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)

2015-01-01

The authors report the development and implementation of a scalable control program to control flow type atomic layer deposition (ALD) reactor with multiple precursor delivery lines. The program logic is written and tested in LABVIEW environment to control ALD reactor with four precursor delivery lines to deposit up to four layers of different materials in cyclic manner. The programming logic is conceived such that to facilitate scale up for depositing more layers with multiple precursors and scale down for using single layer with any one precursor in the ALD reactor. The program takes precursor and oxidizer exposure and purging times as input and controls the sequential opening and closing of the valves to facilitate the complex ALD process in cyclic manner. The program could be used to deposit materials from any single line or in tandem with other lines in any combination and in any sequence.

Declarative and Scalable Selection for Map Visualizations

DEFF Research Database (Denmark)

Kefaloukos, Pimin Konstantin Balic

and is itself a source and cause of prolific data creation. This calls for scalable map processing techniques that can handle the data volume and which play well with the predominant data models on the Web. (4) Maps are now consumed around the clock by a global audience. While historical maps were singleuser......-defined constraints as well as custom objectives. The purpose of the language is to derive a target multi-scale database from a source database according to holistic specifications. (b) The Glossy SQL compiler allows Glossy SQL to be scalably executed in a spatial analytics system, such as a spatial relational......, there are indications that the method is scalable for databases that contain millions of records, especially if the target language of the compiler is substituted by a cluster-ready variant of SQL. While several realistic use cases for maps have been implemented in CVL, additional non-geographic data visualization uses...

Scalable robotic biofabrication of tissue spheroids

International Nuclear Information System (INIS)

Mehesz, A Nagy; Hajdu, Z; Visconti, R P; Markwald, R R; Mironov, V; Brown, J; Beaver, W; Da Silva, J V L

2011-01-01

Development of methods for scalable biofabrication of uniformly sized tissue spheroids is essential for tissue spheroid-based bioprinting of large size tissue and organ constructs. The most recent scalable technique for tissue spheroid fabrication employs a micromolded recessed template prepared in a non-adhesive hydrogel, wherein the cells loaded into the template self-assemble into tissue spheroids due to gravitational force. In this study, we present an improved version of this technique. A new mold was designed to enable generation of 61 microrecessions in each well of a 96-well plate. The microrecessions were seeded with cells using an EpMotion 5070 automated pipetting machine. After 48 h of incubation, tissue spheroids formed at the bottom of each microrecession. To assess the quality of constructs generated using this technology, 600 tissue spheroids made by this method were compared with 600 spheroids generated by the conventional hanging drop method. These analyses showed that tissue spheroids fabricated by the micromolded method are more uniform in diameter. Thus, use of micromolded recessions in a non-adhesive hydrogel, combined with automated cell seeding, is a reliable method for scalable robotic fabrication of uniform-sized tissue spheroids.

Scalable robotic biofabrication of tissue spheroids

Energy Technology Data Exchange (ETDEWEB)

Mehesz, A Nagy; Hajdu, Z; Visconti, R P; Markwald, R R; Mironov, V [Advanced Tissue Biofabrication Center, Department of Regenerative Medicine and Cell Biology, Medical University of South Carolina, Charleston, SC (United States); Brown, J [Department of Mechanical Engineering, Clemson University, Clemson, SC (United States); Beaver, W [York Technical College, Rock Hill, SC (United States); Da Silva, J V L, E-mail: mironovv@musc.edu [Renato Archer Information Technology Center-CTI, Campinas (Brazil)

2011-06-15

Development of methods for scalable biofabrication of uniformly sized tissue spheroids is essential for tissue spheroid-based bioprinting of large size tissue and organ constructs. The most recent scalable technique for tissue spheroid fabrication employs a micromolded recessed template prepared in a non-adhesive hydrogel, wherein the cells loaded into the template self-assemble into tissue spheroids due to gravitational force. In this study, we present an improved version of this technique. A new mold was designed to enable generation of 61 microrecessions in each well of a 96-well plate. The microrecessions were seeded with cells using an EpMotion 5070 automated pipetting machine. After 48 h of incubation, tissue spheroids formed at the bottom of each microrecession. To assess the quality of constructs generated using this technology, 600 tissue spheroids made by this method were compared with 600 spheroids generated by the conventional hanging drop method. These analyses showed that tissue spheroids fabricated by the micromolded method are more uniform in diameter. Thus, use of micromolded recessions in a non-adhesive hydrogel, combined with automated cell seeding, is a reliable method for scalable robotic fabrication of uniform-sized tissue spheroids.

Direct Measurements of Island Growth and Step-Edge Barriers in Colloidal Epitaxy

KAUST Repository

Ganapathy, R.; Buckley, M. R.; Gerbode, S. J.; Cohen, I.

2010-01-01

-scale particles into microstructures that have numerous technological applications. To determine whether atomic epitaxial growth laws are applicable to the epitaxy of larger particles with attractive interactions, we investigated the nucleation and growth dynamics

Architectures and Applications for Scalable Quantum Information Systems

Science.gov (United States)

2007-01-01

Gershenfeld and I. Chuang. Quantum computing with molecules. Scientific American, June 1998. [16] A. Globus, D. Bailey, J. Han, R. Jaffe, C. Levit , R...AFRL-IF-RS-TR-2007-12 Final Technical Report January 2007 ARCHITECTURES AND APPLICATIONS FOR SCALABLE QUANTUM INFORMATION SYSTEMS...NUMBER 5b. GRANT NUMBER FA8750-01-2-0521 4. TITLE AND SUBTITLE ARCHITECTURES AND APPLICATIONS FOR SCALABLE QUANTUM INFORMATION SYSTEMS 5c

Extending JPEG-LS for low-complexity scalable video coding

DEFF Research Database (Denmark)

Ukhanova, Anna; Sergeev, Anton; Forchhammer, Søren

2011-01-01

JPEG-LS, the well-known international standard for lossless and near-lossless image compression, was originally designed for non-scalable applications. In this paper we propose a scalable modification of JPEG-LS and compare it with the leading image and video coding standards JPEG2000 and H.264/SVC...

Spin-dependent transport in epitaxial Fe wires on GaAs(110); Spinabhaengiger Transport in epitaktischen Fe-Leiterbahnen auf GaAs(110)

Energy Technology Data Exchange (ETDEWEB)

Hassel, Christoph

2009-08-11

In the present thesis, the spin dependent transport in epitaxial Fe wires as well as in perpendicularly magnetized multilayer wires is investigated. The main focus is on the investigation of quantum transport phenomena, the domain wall resistance as well as the current induced domain wall motion. Epitaxial Fe wires are prepared from epitaxial Fe films by means of electron beam lithography. Because of the intrinsic magnetic anisotropy, it is possible to prepare wires with a remanent transversal magnetization. Magnetic force microscopy is used to image the magnetic state of single wires. The magnetization reversal behaviour of these wires is investigated in detail using magnetoresistance measurements. These measurements are dominated by effects of the anisotropic magnetoresistance and can be explained by micromagnetic calculations. For the first time, quantum transport phenomena in epitaxial Fe wires are studied by magnetoresistance measurements for temperatures down to 20 mK. These measurements clearly indicate that, independent of the wire width and orientation, no contribution due to weak electron localization can be observed. The results are quantitatively explained within the framework of enhanced electron-electron interactions. Furthermore, by reducing the wire width the onset of the transition from two-dimensional to one-dimensional behaviour is found. To determine the domain wall resistance, a different number of domain walls is created in various structures, whereby the epitaxial samples allow to investigate different domain wall structures. First, a technique based on the stray field of a magnetic force microscope tip is presented. Furthermore, the influence of the shape anisotropy on the coercive field of single wires is used. Contributions to the observed resistance change due to the anisotropic magnetoresistance are calculated using micromagnetic simulations. A positive intrinsic relative resistance increase of 0.2% within the domain wall is found at

Growth of epitaxial thin films by pulsed laser ablation

International Nuclear Information System (INIS)

Lowndes, D.H.

1992-01-01

High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs

Electrodeposition of epitaxial CdSe on (111) gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Cachet, H.; Cortes, R.; Froment, M. [Universite Pierre et Marie Curie, Paris (France). Phys. des Liquides et Electrochimie; Etcheberry, A. [Institut Lavoisier (IREM) UMR CNRS C0173, Universite de Versailles- St Quentin en Yvelynes, 45 Avenue des Etats Unis, 78035, Versailles (France)

2000-02-21

Epitaxial growth of CdSe has been achieved on GaAs(111) by electrodeposition from an aqueous electrolyte. The structure of the film corresponds to the cubic modification of CdSe. The quality of epitaxy has been investigated by reflection high energy electron diffraction, transmission electron microscopy and X-ray diffraction techniques. By XPS measurements the chemistry of the CdSe/GaAs interface and the composition of CdSe are determined. (orig.)

Epitaxial graphene-encapsulated surface reconstruction of Ge(110)

Science.gov (United States)

Campbell, Gavin P.; Kiraly, Brian; Jacobberger, Robert M.; Mannix, Andrew J.; Arnold, Michael S.; Hersam, Mark C.; Guisinger, Nathan P.; Bedzyk, Michael J.

2018-04-01

Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) "6 × 2" reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.

Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers

Science.gov (United States)

Kulkarni, Nagraj S [Knoxville, TN; Kasica, Richard J. ,

2011-03-08

A dual-chamber reactor can include a housing enclosing a volume having a divider therein, where the divider defines a first chamber and a second chamber. The divider can include a substrate holder that supports at least one substrate and exposes a first side of the substrate to the first chamber and a second side of the substrate to the second chamber. The first chamber can include an inlet for delivering at least one reagent to the first chamber for forming a film on the first side of the substrate, and the second chamber can include a removal device for removing material from the second side of the substrate.

Liquid epitaxy of Gasub(1-x)Alsub(x)Sb varizone structures

International Nuclear Information System (INIS)

Dedegkaev, T.T.; Kryukov, I.I.; Lidejkis, T.P.; Tsarenkov, B.V.; Yakovlev, Yu.P.

1980-01-01

To produce Gasub (1-x)Alsub(x)Sb varizon structures with preset limits for the change of the width of Eg forbidden zone and preset Eg gradient value and sign, epitaxy growth from the liquid phase of solid solutions of GaSb-AlSb system was investigated. The epitaxy was realized in two ways: by cooling the saturated solution of Ga-Al-Sb melt and using the isometric contineous mixing of two solution-melts with different Al content. As a result it was ascertained that: 1 the epitaxy by cooling a solution-melt permitted to produce Gasub(1-x)Alsub(x)Sb varizon structures only with small Eg gradients (<=30eV/cm); 2 the epitaxy by contineously mixing the solution-melts permitted to produce Gasub(1-x)Alsub(x)Sb varizon structures with increasing and decreasing Eg in the direction of layer growth in the whole interval of compositions. Eg gradient can be as great as thousands of eV/cm

The origin of local strain in highly epitaxial oxide thin films.

Science.gov (United States)

Ma, Chunrui; Liu, Ming; Chen, Chonglin; Lin, Yuan; Li, Yanrong; Horwitz, J S; Jiang, Jiechao; Meletis, E I; Zhang, Qingyu

2013-10-31

The ability to control the microstructures and physical properties of hetero-epitaxial functional oxide thin films and artificial structures is a long-sought goal in functional materials research. Normally, only the lattice misfit between the film and the substrate is considered to govern the physical properties of the epitaxial films. In fact, the mismatch of film unit cell arrangement and the Surface-Step-Terrace (SST) dimension of the substrate, named as "SST residual matching", is another key factor that significantly influence the properties of the epitaxial film. The nature of strong local strain induced from both lattice mismatch and the SST residual matching on ferroelectric (Ba,Sr)TiO3 and ferromagnetic (La,Ca)MnO3 thin films are systematically investigated and it is demonstrated that this combined effect has a dramatic impact on the physical properties of highly epitaxial oxide thin films. A giant anomalous magnetoresistance effect (~10(10)) was achieved from the as-designed vicinal surfaces.

Handbook of Manufacturing Control Fundamentals, description, configuration

CERN Document Server

Lödding, Hermann

2013-01-01

This first-time English publication of one of Germany’s leading manufacturing control handbooks provides a comprehensive overview of the state of the art, with detailed and easy to understand descriptions of numerous control techniques from Kanban to CONWIP to Backlog Control. Based on the proven funnel model and written for the industry, this book clearly illustrates how companies can use manufacturing control to effectively improve on-time delivery, reduce inventories and cut down throughput times. “This book distinguishes itself with its convincing systematic approach based on thorough international research. Its clear presentation and direct applicability for analysing and configuring the manufacturing control make this handbook an outstanding and unique publication on PPC.” Hans-Peter Wiendahl “The field of manufacturing control is very convincingly reviewed and presented from a theoretical and methodological perspective. Both researchers as well as practitioners will profit from it.” Peter N...

Traffic and Quality Characterization of the H.264/AVC Scalable Video Coding Extension

Directory of Open Access Journals (Sweden)

Geert Van der Auwera

2008-01-01

Full Text Available The recent scalable video coding (SVC extension to the H.264/AVC video coding standard has unprecedented compression efficiency while supporting a wide range of scalability modes, including temporal, spatial, and quality (SNR scalability, as well as combined spatiotemporal SNR scalability. The traffic characteristics, especially the bit rate variabilities, of the individual layer streams critically affect their network transport. We study the SVC traffic statistics, including the bit rate distortion and bit rate variability distortion, with long CIF resolution video sequences and compare them with the corresponding MPEG-4 Part 2 traffic statistics. We consider (i temporal scalability with three temporal layers, (ii spatial scalability with a QCIF base layer and a CIF enhancement layer, as well as (iii quality scalability modes FGS and MGS. We find that the significant improvement in RD efficiency of SVC is accompanied by substantially higher traffic variabilities as compared to the equivalent MPEG-4 Part 2 streams. We find that separately analyzing the traffic of temporal-scalability only encodings gives reasonable estimates of the traffic statistics of the temporal layers embedded in combined spatiotemporal encodings and in the base layer of combined FGS-temporal encodings. Overall, we find that SVC achieves significantly higher compression ratios than MPEG-4 Part 2, but produces unprecedented levels of traffic variability, thus presenting new challenges for the network transport of scalable video.

Development of manufacturing technology for ITER TF Coil Structure

Energy Technology Data Exchange (ETDEWEB)

Sakurai, Takeru, E-mail: sakurai.takeru@jaea.go.jp; Iguchi, Masahide; Nakahira, Masataka; Inagaki, Takashi; Matsui, Kunihiro; Koizumi, Norikiyo

2016-11-01

Highlights: • Heavy thick welding (Max. 287 mm) was performed by balance welding. • Figured out Attachment welding deformation including heavy thick welding. • The deformation of Segments welding was suppressed to 1/3 of previous method. • Based on this study, JAEA started actual ITER TF coil structure manufacturing. - Abstract: Japan Atomic Energy Agency (JAEA) performed a trial of A1 Segment manufacturing of Toroidal Field (TF) coil structure, which is a piece with a radius of curvature 3 m with square channel for coil. Even though both-side welding (balance welding) was preferred to one-side welding considering the welding deformation, it could not be applied to the previous trial due to the difficulty of overhead or horizontal welding by machine. Hence, one-side welding with strong restriction jig was applied in the previous trials. In the latest trial, JAEA adopted a manual balance welding with a development of manufacturing technology. As the result of A1 Segment Mainbody welding trial, welding deformation of the Outer Plate and the Side Plate could have been controlled closer to the target value. JAEA also tried Attachments welding, in which Pre-Compression Flange (PCF) and Extension are welded to A1 Segment Mainbody, and a Segments welding trial, which is a weld between A1 Segment and a part of A2 Segment. A2 Segment is a 3 m straight part with square channel for coil. The inclination of A1 Segment and A2 Segment due to the welding was 2.7 mm. By applying balance welding, the deformation by Segments welding was suppressed to about 1/3 of the one-side welding. The views and opinions expressed herein do not necessarily reflect those of the ITER Organization.

Manufacturer Allowances and Retailer Pass-Through Rates in a Competitive Environment

OpenAIRE

Sang Yong Kim; Richard Staelin

1999-01-01

A commonly held belief has grocery and mass merchandise retailers gaining power relative to the upstream consumer package goods manufacturers. One of the major justifications for this belief is that manufacturers are now giving retailers more side payments such as trade allowances, slotting allowances, etc. However, a number of researchers have shown that these concessions have not translated into increased profit for the retailer relative to the manufacturer. This paper explores, via an anal...

Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure

Energy Technology Data Exchange (ETDEWEB)

Jayachandran, Suseendran, E-mail: suseendran.jayachandran@imec.be [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); Billen, Arne [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium); Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Moussa, Alain; Caymax, Matty; Bender, Hugo [Imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, Wilfried [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Physics and Astronomy, Celestijnenlaan 200D, B-3001 Leuven (Belgium); Heyns, Marc [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); Delabie, Annelies [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium)

2016-10-30

Highlights: • O{sub 3} or O{sub 2} exposures on H-Si(100) result in O ALs with different surface structures. • Si-EPI on O AL using O{sub 3} process is by direct epitaxial growth mechanism. • Si-EPI on O AL using O{sub 2} process is by epitaxial lateral overgrowth mechanism. • Distortions by O AL, SiH{sub 4} flux rate and Si thickness has an impact on Si-EPI quality. - Abstract: The epitaxial growth of Si layers on Si substrates in the presence of O atoms is generally considered a challenge, as O atoms degrade the epitaxial quality by generating defects. Here, we investigate the growth mechanisms for Si epitaxy on O atomic layers (ALs) with different O-contents and structures. O ALs are deposited by ozone (O{sub 3}) or oxygen (O{sub 2}) exposure on H-terminated Si at 50 °C and 300 °C respectively. Epitaxial Si is deposited by chemical vapor deposition using silane (SiH{sub 4}) at 500 °C. After O{sub 3} exposure, the O atoms are uniformly distributed in Si-Si dimer/back bonds. This O layer still allows epitaxial seeding of Si. The epitaxial quality is enhanced by lowering the surface distortions due to O atoms and by decreasing the arrival rate of SiH{sub 4} reactants, allowing more time for surface diffusion. After O{sub 2} exposure, the O atoms are present in the form of SiO{sub x} clusters. Regions of hydrogen-terminated Si remain present between the SiO{sub x} clusters. The epitaxial seeding of Si in these structures is realized on H-Si regions, and an epitaxial layer grows by a lateral overgrowth mechanism. A breakdown in the epitaxial ordering occurs at a critical Si thickness, presumably by accumulation of surface roughness.

The physics of epitaxial graphene on SiC(0001)

International Nuclear Information System (INIS)

Kageshima, H; Hibino, H; Tanabe, S

2012-01-01

Various physical properties of epitaxial graphene grown on SiC(0001) are studied. First, the electronic transport in epitaxial bilayer graphene on SiC(0001) and quasi-free-standing bilayer graphene on SiC(0001) is investigated. The dependences of the resistance and the polarity of the Hall resistance at zero gate voltage on the top-gate voltage show that the carrier types are electron and hole, respectively. The mobility evaluated at various carrier densities indicates that the quasi-free-standing bilayer graphene shows higher mobility than the epitaxial bilayer graphene when they are compared at the same carrier density. The difference in mobility is thought to come from the domain size of the graphene sheet formed. To clarify a guiding principle for controlling graphene quality, the mechanism of epitaxial graphene growth is also studied theoretically. It is found that a new graphene sheet grows from the interface between the old graphene sheets and the SiC substrate. Further studies on the energetics reveal the importance of the role of the step on the SiC surface. A first-principles calculation unequivocally shows that the C prefers to release from the step edge and to aggregate as graphene nuclei along the step edge rather than be left on the terrace. It is also shown that the edges of the existing graphene more preferentially absorb the isolated C atoms. For some annealing conditions, experiments can also provide graphene islands on SiC(0001) surfaces. The atomic structures are studied theoretically together with their growth mechanism. The proposed embedded island structures actually act as a graphene island electronically, and those with zigzag edges have a magnetoelectric effect. Finally, the thermoelectric properties of graphene are theoretically examined. The results indicate that reducing the carrier scattering suppresses the thermoelectric power and enhances the thermoelectric figure of merit. The fine control of the Fermi energy position is thought to

Scalable, full-colour and controllable chromotropic plasmonic printing

OpenAIRE

Xue, Jiancai; Zhou, Zhang-Kai; Wei, Zhiqiang; Su, Rongbin; Lai, Juan; Li, Juntao; Li, Chao; Zhang, Tengwei; Wang, Xue-Hua

2015-01-01

Plasmonic colour printing has drawn wide attention as a promising candidate for the next-generation colour-printing technology. However, an efficient approach to realize full colour and scalable fabrication is still lacking, which prevents plasmonic colour printing from practical applications. Here we present a scalable and full-colour plasmonic printing approach by combining conjugate twin-phase modulation with a plasmonic broadband absorber. More importantly, our approach also demonstrates ...

Semipolar (202̅1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect

Science.gov (United States)

Forman, C.; Leonard, J.; Yonkee, B.; Pynn, C.; Mates, T.; Cohen, D.; Farrell, R.; Margalith, T.; DenBaars, S.; Speck, J.; Nakamura, S.

2017-04-01

P-down LEDs (PDLEDs) have the potential to open up new design schemes for III-nitride LEDs compared to conventional n-down LEDs (NDLEDs). For light emitters operating above 480 nm, the PDLED design enables the epitaxial advantages of semipolar (202̅1) and gains the polarization benefits of semipolar (202̅1̅). Here, we investigated semipolar (202̅1) InGaN-based PDLEDs in terms of their photoluminescence (PL) spectra and compositional profile. Despite concerns of the Mg memory effect degrading PDLED performance due to Mg-related non-radiative recombination centers, the PL intensities were nearly identical between the NDLED and PDLEDs, which emitted at wavelengths centered near 500 nm. Secondary ion mass spectrometry revealed that the Mg doping levels in the multiple quantum well (MQW) active region were comparable for each structure, with average values of 2.9×1018 cm-3 for the NDLED and 1.8×1018 cm-3 for the PDLED. Prior to growing the active region MQW, a 700 °C in situ anneal was carried out to reduce the average Mg concentration in the PDLED MQW to 3.7×1017 cm-3. Its hydrogen concentration remained at 5×1019 cm-3 in the p-type GaN region, which suggests that hydrogen passivation occurs during the growth of subsequent epitaxial layers in ammonia.

Temporal scalability comparison of the H.264/SVC and distributed video codec

DEFF Research Database (Denmark)

Huang, Xin; Ukhanova, Ann; Belyaev, Evgeny

2009-01-01

The problem of the multimedia scalable video streaming is a current topic of interest. There exist many methods for scalable video coding. This paper is focused on the scalable extension of H.264/AVC (H.264/SVC) and distributed video coding (DVC). The paper presents an efficiency comparison of SV...

On the density of states of disordered epitaxial graphene

International Nuclear Information System (INIS)

Davydov, S. Yu.

2015-01-01

The study is concerned with two types of disordered epitaxial graphene: (i) graphene with randomly located carbon vacancies and (ii) structurally amorphous graphene. The former type is considered in the coherent potential approximation, and for the latter type, a model of the density of states is proposed. The effects of two types of substrates, specifically, metal and semiconductor substrates are taken into account. The specific features of the density of states of epitaxial graphene at the Dirac point and the edges of the continuous spectrum are analyzed. It is shown that vacancies in epitaxial graphene formed on the metal substrate bring about logarithmic nulling of the density of states of graphene at the Dirac point and the edges of the continuous spectrum. If the Dirac point corresponds to the middle of the band gap of the semiconductor substrate, the linear trend of the density of states to zero in the vicinity of the Dirac point in defect-free graphene transforms into a logarithmic decrease in the presence of vacancies. In both cases, the graphene-substrate interaction is assumed to be weak (quasi-free graphene). In the study of amorphous epitaxial graphene, a simple model of free amorphous graphene is proposed as the initial model, in which account is taken of the nonzero density of states at the Dirac point, and then the interaction of the graphene sheet with the substrate is taken into consideration. It is shown that, near the Dirac point, the quadratic behavior of the density of states of free amorphous graphene transforms into a linear dependence for amorphous epitaxial graphene. In the study, the density of states of free graphene corresponds to the low-energy approximation of the electron spectrum

Scalable and near-optimal design space exploration for embedded systems

CERN Document Server

Kritikakou, Angeliki; Goutis, Costas

2014-01-01

This book describes scalable and near-optimal, processor-level design space exploration (DSE) methodologies.  The authors present design methodologies for data storage and processing in real-time, cost-sensitive data-dominated embedded systems.  Readers will be enabled to reduce time-to-market, while satisfying system requirements for performance, area, and energy consumption, thereby minimizing the overall cost of the final design.   • Describes design space exploration (DSE) methodologies for data storage and processing in embedded systems, which achieve near-optimal solutions with scalable exploration time; • Presents a set of principles and the processes which support the development of the proposed scalable and near-optimal methodologies; • Enables readers to apply scalable and near-optimal methodologies to the intra-signal in-place optimization step for both regular and irregular memory accesses.

Software performance and scalability a quantitative approach

CERN Document Server

Liu, Henry H

2009-01-01

Praise from the Reviewers:"The practicality of the subject in a real-world situation distinguishes this book from othersavailable on the market."—Professor Behrouz Far, University of Calgary"This book could replace the computer organization texts now in use that every CS and CpEstudent must take. . . . It is much needed, well written, and thoughtful."—Professor Larry Bernstein, Stevens Institute of TechnologyA distinctive, educational text onsoftware performance and scalabilityThis is the first book to take a quantitative approach to the subject of software performance and scalability

Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy

International Nuclear Information System (INIS)

Galopin, E; Largeau, L; Patriarche, G; Travers, L; Glas, F; Harmand, J C

2011-01-01

GaN nanowires are synthesized by plasma-assisted molecular beam epitaxy on Si(111) substrates. The strong impact of the cell orientation relative to the substrate on the nanowire morphology is shown. To study the kinetics of growth, thin AlN markers are introduced periodically during NW growth. These markers are observed in single nanowires by transmission electron microscopy, giving access to the chronology of the nanowire formation and to the time evolution of the nanowire morphology. A long delay precedes the beginning of nanowire formation. Then, their elongation proceeds at a constant rate. Later, shells develop on the side-wall facets by ascending growth of layer bunches which first agglomerate at the nanowire foot.

Controllable factors affecting the epitaxial quality of LaCoO3 films ...

Indian Academy of Sciences (India)

2018-03-23

Mar 23, 2018 ... ... larger molecular weight contribute to the improvement of epitaxial quality of LaCoO3 epitaxial film. ..... Research Fund of Education Department of Sichuan Province. (grant nos. 16ZA0133 and 15ZB0108); and the Doctoral.

Selfsupported epitaxial silicon films

International Nuclear Information System (INIS)

Lazarovici, D.; Popescu, A.

1975-01-01

The methods of removing the p or p + support of an n-type epitaxial silicon layer using electrochemical etching are described. So far, only n + -n junctions have been processed. The condition of anodic dissolution for some values of the support and layer resistivity are given. By this method very thin single crystal selfsupported targets of convenient areas can be obtained for channeling - blocking experiments

Quality Scalability Compression on Single-Loop Solution in HEVC

Directory of Open Access Journals (Sweden)

Mengmeng Zhang

2014-01-01

Full Text Available This paper proposes a quality scalable extension design for the upcoming high efficiency video coding (HEVC standard. In the proposed design, the single-loop decoder solution is extended into the proposed scalable scenario. A novel interlayer intra/interprediction is added to reduce the amount of bits representation by exploiting the correlation between coding layers. The experimental results indicate that the average Bjøntegaard delta rate decrease of 20.50% can be gained compared with the simulcast encoding. The proposed technique achieved 47.98% Bjøntegaard delta rate reduction compared with the scalable video coding extension of the H.264/AVC. Consequently, significant rate savings confirm that the proposed method achieves better performance.

Epitaxial growth and properties of YBaCuO thin films

International Nuclear Information System (INIS)

Geerk, J.; Linker, G.; Meyer, O.

1989-08-01

The growth quality of YBaCuO thin films deposited by sputtering on different substrates (Al 2 O 3 , MgO, SrTiO 3 , Zr(Y)O 2 ) has been studied by X-ray diffraction and channeling experiments as a function of the deposition temperature. Besides the substrate orientation, the substrate temperature is the parameter determining whether films grow in c-, a-, (110) or mixed directions. Epitaxial growth correlates with high critical current values in the films of up to 5.5x10 6 A/cm 2 at 77 K. Ultrathin films with thicknesses down to 2 nm were grown revealing three-dimensional superconducting behaviour. Films on (100) SrTiO 3 of 9 nm thickness and below are partially strained indicating commensurate growth. From the analysis of the surface disorder 1 displaced Ba atom per Ba 2 Y row was obtained indicating that the disordered layer thickness is about 0.6 nm. Tunnel junctions fabricated on these films reveal gap-like structures near ±16 mV and ±30 mV. (orig.) [de

Ion beam deposited epitaxial thin silicon films

International Nuclear Information System (INIS)

Orrman-Rossiter, K.G.; Al-Bayati, A.H.; Armour, D.G.; Donnelly, S.E.; Berg, J.A. van den

1991-01-01

Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10-200 eV 28 Si + and 30 Si + ions at substrate temperatures in the range 273-1073 K, under ultrahigh-vacuum conditions (deposition pressure -7 Pa). The film crystallinity was assessed in situ using medium energy ion scattering (MEIS). Films of crystallinity comparable to bulk samples were grown using 10-40 eV 28 Si + and 30 Si + ions at deposition temperatures in the range 623-823 K. These experiments confirmed the role of key experimental parameters such as ion energy, substrate temperature during deposition, and the surface treatment prior to deposition. It was found that a high temperature in situ anneal (1350-1450 K) gave the best results for epitaxial nucleation, whereas low energy (20-40 eV) Cl + ion bombardment resulted in amorphous film growth. The deposition energy for good epitaxial growth indicates that it is necessary to provide enough energy to induce local mobility but not to cause atomic displacements leading to the buildup of stable defects, e.g. divacancies, below the surface layer of the growing film. (orig.)

SOL: A Library for Scalable Online Learning Algorithms

OpenAIRE

Wu, Yue; Hoi, Steven C. H.; Liu, Chenghao; Lu, Jing; Sahoo, Doyen; Yu, Nenghai

2016-01-01

SOL is an open-source library for scalable online learning algorithms, and is particularly suitable for learning with high-dimensional data. The library provides a family of regular and sparse online learning algorithms for large-scale binary and multi-class classification tasks with high efficiency, scalability, portability, and extensibility. SOL was implemented in C++, and provided with a collection of easy-to-use command-line tools, python wrappers and library calls for users and develope...

Epitaxial stabilization of ordered Pd–Fe structures on perovskite substrates

Energy Technology Data Exchange (ETDEWEB)

Harton, Renee M., E-mail: reneehar@umich.edu [Department of Physics, University of Michigan, 450 Church St., Ann Arbor, MI 48109 (United States); Stoica, Vladimir A. [Department of Materials Science and Engineering, Pennsylvania State University, 201 Old Main, University Park, PA 16802 (United States); Clarke, Roy [Department of Physics, University of Michigan, 450 Church St., Ann Arbor, MI 48109 (United States)

2017-05-01

We report the fabrication of epitaxial ferromagnetic Pd{sub 3}Fe thin films on SrTiO{sub 3}(001) substrates by promoting the interdiffusion of an Fe/Pd multilayer heterostructure using thermal annealing. Prior to annealing, the results of in-situ Reflection High-Energy Electron Diffraction characterization suggest that each Fe and Pd layer exhibited an in-plane epitaxial relationship with the SrTiO{sub 3}(001) substrate. X-Ray diffraction and magneto-optic Kerr effect characterization, conducted post-annealing, demonstrate that the film composition is majority Pd{sub 3}Fe and exhibits in-plane magnetization reversal with a moderate coercive field of ≈760 Oe. This demonstration of an ordered atomic layer heterostructure grown on a perovskite substrate suggests a route to epitaxial interfacial structures which can achieve strain-assisted magnetic switching.

Kinetic-energy induced smoothening and delay of epitaxial breakdown in pulsed-laser deposition

International Nuclear Information System (INIS)

Shin, Byungha; Aziz, Michael J.

2007-01-01

We have isolated the effect of kinetic energy of depositing species from the effect of flux pulsing during pulsed-laser deposition (PLD) on surface morphology evolution of Ge(001) homoepitaxy at low temperature (100 deg. C). Using a dual molecular beam epitaxy (MBE) PLD chamber, we compare morphology evolution from three different growth methods under identical experimental conditions except for the differing nature of the depositing flux: (a) PLD with average kinetic energy 300 eV (PLD-KE); (b) PLD with suppressed kinetic energy comparable to thermal evaporation energy (PLD-TH); and (c) MBE. The thicknesses at which epitaxial breakdown occurs are ranked in the order PLD-KE>MBE>PLD-TH; additionally, the surface is smoother in PLD-KE than in MBE. The surface roughness of the films grown by PLD-TH cannot be compared due to the early epitaxial breakdown. These results demonstrate convincingly that kinetic energy is more important than flux pulsing in the enhancement of epitaxial growth, i.e., the reduction in roughness and the delay of epitaxial breakdown

A scalable distributed RRT for motion planning

KAUST Repository

Jacobs, Sam Ade

2013-05-01

Rapidly-exploring Random Tree (RRT), like other sampling-based motion planning methods, has been very successful in solving motion planning problems. Even so, sampling-based planners cannot solve all problems of interest efficiently, so attention is increasingly turning to parallelizing them. However, one challenge in parallelizing RRT is the global computation and communication overhead of nearest neighbor search, a key operation in RRTs. This is a critical issue as it limits the scalability of previous algorithms. We present two parallel algorithms to address this problem. The first algorithm extends existing work by introducing a parameter that adjusts how much local computation is done before a global update. The second algorithm radially subdivides the configuration space into regions, constructs a portion of the tree in each region in parallel, and connects the subtrees,i removing cycles if they exist. By subdividing the space, we increase computation locality enabling a scalable result. We show that our approaches are scalable. We present results demonstrating almost linear scaling to hundreds of processors on a Linux cluster and a Cray XE6 machine. © 2013 IEEE.

A scalable distributed RRT for motion planning

KAUST Repository

Jacobs, Sam Ade; Stradford, Nicholas; Rodriguez, Cesar; Thomas, Shawna; Amato, Nancy M.

2013-01-01

Rapidly-exploring Random Tree (RRT), like other sampling-based motion planning methods, has been very successful in solving motion planning problems. Even so, sampling-based planners cannot solve all problems of interest efficiently, so attention is increasingly turning to parallelizing them. However, one challenge in parallelizing RRT is the global computation and communication overhead of nearest neighbor search, a key operation in RRTs. This is a critical issue as it limits the scalability of previous algorithms. We present two parallel algorithms to address this problem. The first algorithm extends existing work by introducing a parameter that adjusts how much local computation is done before a global update. The second algorithm radially subdivides the configuration space into regions, constructs a portion of the tree in each region in parallel, and connects the subtrees,i removing cycles if they exist. By subdividing the space, we increase computation locality enabling a scalable result. We show that our approaches are scalable. We present results demonstrating almost linear scaling to hundreds of processors on a Linux cluster and a Cray XE6 machine. © 2013 IEEE.

Crystalline and electronic structure of epitaxial γ-Al2O3 films

International Nuclear Information System (INIS)

Wu, Huiyan; Lu, Dawei; Zhu, Kerong; Xu, Guoyong; Wang, Hu

2013-01-01

Epitaxial γ-Al 2 O 3 films were fabricated on SrTiO 3 (1 0 0) substrates using pulsed laser deposition (PLD) technique. The high quality of epitaxial growth γ-Al 2 O 3 films was confirmed by X-ray diffraction (XRD). Atomic force microscopy (AFM) images indicated the smooth surfaces and the step-flow growth of the films. In order to illuminate the electronic properties and the local structure of the epitaxial γ-Al 2 O 3 , we experimentally measured the X-ray absorption near-edge structure (XANES) spectrum at the O K-edge and compared the spectrum with the theoretical simulations by using various structure models. Our results based on XANES spectrum analysis indicated that the structure of the epitaxial γ-Al 2 O 3 film was a defective spinel with Al vacancies, which prefer to be located at the octahedral sites

Transforming nanomedicine manufacturing toward Quality by Design and microfluidics.

Science.gov (United States)

Colombo, Stefano; Beck-Broichsitter, Moritz; Bøtker, Johan Peter; Malmsten, Martin; Rantanen, Jukka; Bohr, Adam

2018-04-05

Nanopharmaceuticals aim at translating the unique features of nano-scale materials into therapeutic products and consequently their development relies critically on the progression in manufacturing technology to allow scalable processes complying with process economy and quality assurance. The relatively high failure rate in translational nanopharmaceutical research and development, with respect to new products on the market, is at least partly due to immature bottom-up manufacturing development and resulting sub-optimal control of quality attributes in nanopharmaceuticals. Recently, quality-oriented manufacturing of pharmaceuticals has undergone an unprecedented change toward process and product development interaction. In this context, Quality by Design (QbD) aims to integrate product and process development resulting in an increased number of product applications to regulatory agencies and stronger proprietary defense strategies of process-based products. Although QbD can be applied to essentially any production approach, microfluidic production offers particular opportunities for QbD-based manufacturing of nanopharmaceuticals. Microfluidics provides unique design flexibility, process control and parameter predictability, and also offers ample opportunities for modular production setups, allowing process feedback for continuously operating production and process control. The present review aims at outlining emerging opportunities in the synergistic implementation of QbD strategies and microfluidic production in contemporary development and manufacturing of nanopharmaceuticals. In doing so, aspects of design and development, but also technology management, are reviewed, as is the strategic role of these tools for aligning nanopharmaceutical innovation, development, and advanced industrialization in the broader pharmaceutical field. Copyright © 2018 Elsevier B.V. All rights reserved.

Microstructure of epitaxial YBa2Cu3O7-x thin films grown on LaAlO3 (001)

International Nuclear Information System (INIS)

Hsieh, Y.; Siegal, M.P.; Hull, R.; Phillips, J.M.

1990-01-01

We report a microstructural investigation of the epitaxial growth of YBa 2 Cu 3 O 7-x (YBCO) thin films on LaAlO 3 (001) substrates using transmission electron microscopy (TEM). Epitaxial films grow with two distinct modes: c epitaxy (YBCO) single crystal with the c (axis normal to the surface and a epitaxy (YBCO) single crystal with the c axis in the interfacial plane), where c epitaxy is the dominant mode grown in all samples 35--200 nm thick. In 35 nm YBCO films annealed at 850 degree C, 97±1% of the surface area is covered by c epitaxy with embedded anisotropic a-epitaxial grains. Quantitative analysis reveals the effect of film thickness and annealing temperature on the density, grain sizes, areal coverages, and anisotropic growth of a epitaxy

CloudTPS: Scalable Transactions for Web Applications in the Cloud

NARCIS (Netherlands)

Zhou, W.; Pierre, G.E.O.; Chi, C.-H.

2010-01-01

NoSQL Cloud data services provide scalability and high availability properties for web applications but at the same time they sacrifice data consistency. However, many applications cannot afford any data inconsistency. CloudTPS is a scalable transaction manager to allow cloud database services to

Epitaxial ternary nitride thin films prepared by a chemical solution method

Energy Technology Data Exchange (ETDEWEB)

Luo, Hongmei [Los Alamos National Laboratory; Feldmann, David M [Los Alamos National Laboratory; Wang, Haiyan [TEXAS A& M; Bi, Zhenxing [TEXAS A& M

2008-01-01

It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

Laser additive manufacturing of 3D meshes for optical applications.

Science.gov (United States)

Essa, Khamis; Sabouri, Aydin; Butt, Haider; Basuny, Fawzia Hamed; Ghazy, Mootaz; El-Sayed, Mahmoud Ahmed

2018-01-01

Selective laser melting (SLM) is a widely used additive manufacturing process that can be used for printing of intricate three dimensional (3D) metallic structures. Here we demonstrate the fabrication of titanium alloy Ti-6Al-4V alloy based 3D meshes with nodally-connected diamond like unit cells, with lattice spacing varying from 400 to 1000 microns. A Concept Laser M2 system equipped with laser that has a wavelength of 1075 nm, a constant beam spot size of 50μm and maximum power of 400W was used to manufacture the 3D meshes. These meshes act as optical shutters / directional transmitters and display interesting optical properties. A detailed optical characterisation was carried out and it was found that these structures can be optimised to act as scalable rotational shutters with high efficiencies and as angle selective transmission screens for protection against unwanted and dangerous radiations. The efficiency of fabricated lattice structures can be increased by enlarging the meshing size.

Laser additive manufacturing of 3D meshes for optical applications.

Directory of Open Access Journals (Sweden)

Khamis Essa

Full Text Available Selective laser melting (SLM is a widely used additive manufacturing process that can be used for printing of intricate three dimensional (3D metallic structures. Here we demonstrate the fabrication of titanium alloy Ti-6Al-4V alloy based 3D meshes with nodally-connected diamond like unit cells, with lattice spacing varying from 400 to 1000 microns. A Concept Laser M2 system equipped with laser that has a wavelength of 1075 nm, a constant beam spot size of 50μm and maximum power of 400W was used to manufacture the 3D meshes. These meshes act as optical shutters / directional transmitters and display interesting optical properties. A detailed optical characterisation was carried out and it was found that these structures can be optimised to act as scalable rotational shutters with high efficiencies and as angle selective transmission screens for protection against unwanted and dangerous radiations. The efficiency of fabricated lattice structures can be increased by enlarging the meshing size.

From Digital Disruption to Business Model Scalability

DEFF Research Database (Denmark)

Nielsen, Christian; Lund, Morten; Thomsen, Peter Poulsen

2017-01-01

This article discusses the terms disruption, digital disruption, business models and business model scalability. It illustrates how managers should be using these terms for the benefit of their business by developing business models capable of achieving exponentially increasing returns to scale...... will seldom lead to business model scalability capable of competing with digital disruption(s)....... as a response to digital disruption. A series of case studies illustrate that besides frequent existing messages in the business literature relating to the importance of creating agile businesses, both in growing and declining economies, as well as hard to copy value propositions or value propositions that take...

Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition

International Nuclear Information System (INIS)

Comes, Ryan; Liu Hongxue; Lu Jiwei; Gu, Man; Khokhlov, Mikhail; Wolf, Stuart A.

2013-01-01

Complex oxide epitaxial film growth is a rich and exciting field, owing to the wide variety of physical properties present in oxides. These properties include ferroelectricity, ferromagnetism, spin-polarization, and a variety of other correlated phenomena. Traditionally, high quality epitaxial oxide films have been grown via oxide molecular beam epitaxy or pulsed laser deposition. Here, we present the growth of high quality epitaxial films using an alternative approach, the pulsed electron-beam deposition technique. We demonstrate all three epitaxial growth modes in different oxide systems: Frank-van der Merwe (layer-by-layer); Stranski-Krastanov (layer-then-island); and Volmer-Weber (island). Analysis of film quality and morphology is presented and techniques to optimize the morphology of films are discussed.

Scalable Packet Classification with Hash Tables

Science.gov (United States)

Wang, Pi-Chung

In the last decade, the technique of packet classification has been widely deployed in various network devices, including routers, firewalls and network intrusion detection systems. In this work, we improve the performance of packet classification by using multiple hash tables. The existing hash-based algorithms have superior scalability with respect to the required space; however, their search performance may not be comparable to other algorithms. To improve the search performance, we propose a tuple reordering algorithm to minimize the number of accessed hash tables with the aid of bitmaps. We also use pre-computation to ensure the accuracy of our search procedure. Performance evaluation based on both real and synthetic filter databases shows that our scheme is effective and scalable and the pre-computation cost is moderate.

A scalable method for parallelizing sampling-based motion planning algorithms

KAUST Repository

Jacobs, Sam Ade; Manavi, Kasra; Burgos, Juan; Denny, Jory; Thomas, Shawna; Amato, Nancy M.

2012-01-01

This paper describes a scalable method for parallelizing sampling-based motion planning algorithms. It subdivides configuration space (C-space) into (possibly overlapping) regions and independently, in parallel, uses standard (sequential) sampling-based planners to construct roadmaps in each region. Next, in parallel, regional roadmaps in adjacent regions are connected to form a global roadmap. By subdividing the space and restricting the locality of connection attempts, we reduce the work and inter-processor communication associated with nearest neighbor calculation, a critical bottleneck for scalability in existing parallel motion planning methods. We show that our method is general enough to handle a variety of planning schemes, including the widely used Probabilistic Roadmap (PRM) and Rapidly-exploring Random Trees (RRT) algorithms. We compare our approach to two other existing parallel algorithms and demonstrate that our approach achieves better and more scalable performance. Our approach achieves almost linear scalability on a 2400 core LINUX cluster and on a 153,216 core Cray XE6 petascale machine. © 2012 IEEE.

A scalable method for parallelizing sampling-based motion planning algorithms

KAUST Repository

Jacobs, Sam Ade

2012-05-01

This paper describes a scalable method for parallelizing sampling-based motion planning algorithms. It subdivides configuration space (C-space) into (possibly overlapping) regions and independently, in parallel, uses standard (sequential) sampling-based planners to construct roadmaps in each region. Next, in parallel, regional roadmaps in adjacent regions are connected to form a global roadmap. By subdividing the space and restricting the locality of connection attempts, we reduce the work and inter-processor communication associated with nearest neighbor calculation, a critical bottleneck for scalability in existing parallel motion planning methods. We show that our method is general enough to handle a variety of planning schemes, including the widely used Probabilistic Roadmap (PRM) and Rapidly-exploring Random Trees (RRT) algorithms. We compare our approach to two other existing parallel algorithms and demonstrate that our approach achieves better and more scalable performance. Our approach achieves almost linear scalability on a 2400 core LINUX cluster and on a 153,216 core Cray XE6 petascale machine. © 2012 IEEE.

Efficient Enhancement for Spatial Scalable Video Coding Transmission

Directory of Open Access Journals (Sweden)

Mayada Khairy

2017-01-01

Full Text Available Scalable Video Coding (SVC is an international standard technique for video compression. It is an extension of H.264 Advanced Video Coding (AVC. In the encoding of video streams by SVC, it is suitable to employ the macroblock (MB mode because it affords superior coding efficiency. However, the exhaustive mode decision technique that is usually used for SVC increases the computational complexity, resulting in a longer encoding time (ET. Many other algorithms were proposed to solve this problem with imperfection of increasing transmission time (TT across the network. To minimize the ET and TT, this paper introduces four efficient algorithms based on spatial scalability. The algorithms utilize the mode-distribution correlation between the base layer (BL and enhancement layers (ELs and interpolation between the EL frames. The proposed algorithms are of two categories. Those of the first category are based on interlayer residual SVC spatial scalability. They employ two methods, namely, interlayer interpolation (ILIP and the interlayer base mode (ILBM method, and enable ET and TT savings of up to 69.3% and 83.6%, respectively. The algorithms of the second category are based on full-search SVC spatial scalability. They utilize two methods, namely, full interpolation (FIP and the full-base mode (FBM method, and enable ET and TT savings of up to 55.3% and 76.6%, respectively.

Embedded High Performance Scalable Computing Systems

National Research Council Canada - National Science Library

Ngo, David

2003-01-01

The Embedded High Performance Scalable Computing Systems (EHPSCS) program is a cooperative agreement between Sanders, A Lockheed Martin Company and DARPA that ran for three years, from Apr 1995 - Apr 1998...

Zinc oxide nanoleaves: A scalable disperser-assisted sonochemical approach for synthesis and an antibacterial application.

Science.gov (United States)

Gupta, Anadi; Srivastava, Rohit

2018-03-01

Current study reports a new and highly scalable method for the synthesis of novel structure Zinc oxide nanoleaves (ZnO-NLs) using disperser-assisted sonochemical approach. The synthesis was carried out in different batches from 50mL to 1L to ensure the scalability of the method which produced almost similar results. The use of high speed (9000rpm) mechanical dispersion while bath sonication (200W, 33kHz) yield 4.4g of ZnO-NLs powder in 1L batch reaction within 2h (>96% yield). The ZnO-NLs shows an excellent thermal stability even at a higher temperature (900°C) and high surface area. The high antibacterial activity of ZnO-NLs against diseases causing Gram-positive bacteria Staphylococcus aureus shows a reduction in CFU, morphological changes like eight times reduction in cell size, cell burst, and cellular leakage at 200µg/mL concentration. This study provides an efficient, cost-effective and an environmental friendly approach for the synthesis of ZnO-NLs at industrial scale as well as new technique to increase the efficiency of the existing sonochemical method. We envisage that this method can be applied to various fields where ZnO is significantly consumed like rubber manufacturing, ceramic industry and medicine. Copyright © 2017 Elsevier B.V. All rights reserved.

Slot-die Coating of a High Performance Copolymer in a Readily Scalable Roll Process for Polymer Solar Cells

DEFF Research Database (Denmark)

Helgesen, Martin; Carlé, Jon Eggert; Krebs, Frederik C

2013-01-01

reported compact coating/printing machine, which enables the preparation of PSCs that are directly scalable with full roll-to-roll processing. The positioning of the side-chains on the thiophene units proves to be very significant in terms of solubility of the polymers and consequently has a major impact...... on the device yield and process control. The most successful processing is accomplished with the polymer, PDTSTTz-4, that has the side-chains situated in the 4-position on the thiophene units. Inverted PSCs based on PDTSTTz-4 demonstrate high fill factors, up to 59%, even with active layer thicknesses well...... above 200 nm. Power conversion efficiencies of up to 3.5% can be reached with the roll-coated PDTSTTz-4:PCBM solar cells that, together with good process control and high device yield, designate PDTSTTz-4 as a convincing candidate for high-throughput roll-to-roll production of PSCs....

Electronic properties of epitaxial 6H silicon carbide

International Nuclear Information System (INIS)

Wessels, B.W.; Gatos, H.C.

1977-01-01

The electrical conductivity and Hall coefficient were measured in the temperature range from 78 to 900 K for n-type epitaxially grown 6H silicon carbide. A many-valley model of the conduction band was used in the analysis of electron concentration as a function of temperature. From this analysis, the density of states mass to the free electron mass ratio per ellipsoid was calculated to be 0.45. It was estimated that the constant energy surface of the conduction band consists of three ellipsoids. The ionization energy of the shallowest nitrogen donor was found to be 105 meV, when the valley-orbit interaction was taken into account. The electron scattering mechanisms in the epitaxial layers were analyzed and it was shown that the dominant mechanism limiting electron mobility at high temperatures is inter-valley scattering and at low temperatures (200K), impurity and space charge scattering. A value of 360 cm 2 /V sec was calculated for the maximum room temperature Hall mobility expected for electrons in pure 6H SiC. The effect of epitaxial growth temperature on room temperature Hall mobility was also investigated. (author)

Investigation on Reliability and Scalability of an FBG-Based Hierarchical AOFSN

Directory of Open Access Journals (Sweden)

Li-Mei Peng

2010-03-01

Full Text Available The reliability and scalability of large-scale based optical fiber sensor networks (AOFSN are considered in this paper. The AOFSN network consists of three-level hierarchical sensor network architectures. The first two levels consist of active interrogation and remote nodes (RNs and the third level, called the sensor subnet (SSN, consists of passive Fiber Bragg Gratings (FBGs and a few switches. The switch architectures in the RN and various SSNs to improve the reliability and scalability of AOFSN are studied. Two SSNs with a regular topology are proposed to support simple routing and scalability in AOFSN: square-based sensor cells (SSC and pentagon-based sensor cells (PSC. The reliability and scalability are evaluated in terms of the available sensing coverage in the case of one or multiple link failures.

Complex Nanostructures by Pulsed Droplet Epitaxy

Directory of Open Access Journals (Sweden)

Noboyuki Koguchi

2011-06-01

Full Text Available What makes three dimensional semiconductor quantum nanostructures so attractive is the possibility to tune their electronic properties by careful design of their size and composition. These parameters set the confinement potential of electrons and holes, thus determining the electronic and optical properties of the nanostructure. An often overlooked parameter, which has an even more relevant effect on the electronic properties of the nanostructure, is shape. Gaining a strong control over the electronic properties via shape tuning is the key to access subtle electronic design possibilities. The Pulsed Dropled Epitaxy is an innovative growth method for the fabrication of quantum nanostructures with highly designable shapes and complex morphologies. With Pulsed Dropled Epitaxy it is possible to combine different nanostructures, namely quantum dots, quantum rings and quantum disks, with tunable sizes and densities, into a single multi-function nanostructure, thus allowing an unprecedented control over electronic properties.

Molecular beam epitaxy of Cd3As2 on a III-V substrate

Directory of Open Access Journals (Sweden)

Timo Schumann

2016-12-01

Full Text Available Epitaxial, strain-engineered Dirac semimetal heterostructures promise tuning of the unique properties of these materials. In this study, we investigate the growth of thin films of the recently discovered Dirac semimetal Cd3As2 by molecular beam epitaxy. We show that epitaxial Cd3As2 layers can be grown at low temperatures (110 °C–220 °C, in situ, on (111 GaSb buffer layers deposited on (111 GaAs substrates. The orientation relationship is described by ( 112 Cd 3 As 2 || (111 GaSb and [ 1 1 ¯ 0 ] Cd 3 As 2 || [ 1 ¯ 01 ] GaSb . The films are shown to grow in the low-temperature, vacancy ordered, tetragonal Dirac semimetal phase. They exhibit high room temperature mobilities of up to 19300 cm2/Vs, despite a three-dimensional surface morphology indicative of island growth and the presence of twin variants. The results indicate that epitaxial growth on more closely lattice matched buffer layers, such as InGaSb or InAlSb, which allow for imposing different degrees of epitaxial coherency strains, should be possible.

Scalable Coverage Maintenance for Dense Wireless Sensor Networks

Directory of Open Access Journals (Sweden)

Jun Lu

2007-06-01

Full Text Available Owing to numerous potential applications, wireless sensor networks have been attracting significant research effort recently. The critical challenge that wireless sensor networks often face is to sustain long-term operation on limited battery energy. Coverage maintenance schemes can effectively prolong network lifetime by selecting and employing a subset of sensors in the network to provide sufficient sensing coverage over a target region. We envision future wireless sensor networks composed of a vast number of miniaturized sensors in exceedingly high density. Therefore, the key issue of coverage maintenance for future sensor networks is the scalability to sensor deployment density. In this paper, we propose a novel coverage maintenance scheme, scalable coverage maintenance (SCOM, which is scalable to sensor deployment density in terms of communication overhead (i.e., number of transmitted and received beacons and computational complexity (i.e., time and space complexity. In addition, SCOM achieves high energy efficiency and load balancing over different sensors. We have validated our claims through both analysis and simulations.

DISP: Optimizations towards Scalable MPI Startup

Energy Technology Data Exchange (ETDEWEB)

Fu, Huansong [Florida State University, Tallahassee; Pophale, Swaroop S [ORNL; Gorentla Venkata, Manjunath [ORNL; Yu, Weikuan [Florida State University, Tallahassee

2016-01-01

Despite the popularity of MPI for high performance computing, the startup of MPI programs faces a scalability challenge as both the execution time and memory consumption increase drastically at scale. We have examined this problem using the collective modules of Cheetah and Tuned in Open MPI as representative implementations. Previous improvements for collectives have focused on algorithmic advances and hardware off-load. In this paper, we examine the startup cost of the collective module within a communicator and explore various techniques to improve its efficiency and scalability. Accordingly, we have developed a new scalable startup scheme with three internal techniques, namely Delayed Initialization, Module Sharing and Prediction-based Topology Setup (DISP). Our DISP scheme greatly benefits the collective initialization of the Cheetah module. At the same time, it helps boost the performance of non-collective initialization in the Tuned module. We evaluate the performance of our implementation on Titan supercomputer at ORNL with up to 4096 processes. The results show that our delayed initialization can speed up the startup of Tuned and Cheetah by an average of 32.0% and 29.2%, respectively, our module sharing can reduce the memory consumption of Tuned and Cheetah by up to 24.1% and 83.5%, respectively, and our prediction-based topology setup can speed up the startup of Cheetah by up to 80%.

Assessing the influence of manufacturing sectors on electricity demand. A cross-country input-output approach

International Nuclear Information System (INIS)

Tarancon, Miguel Angel; Callejas Albinana, Fernando; Del Rio, Pablo

2010-01-01

The production and consumption of electricity is a major source of CO 2 emissions in Europe and elsewhere. In turn, the manufacturing sectors are significant end-users of electricity. In contrast to most papers in the literature, which focus on the supply-side, this study tackles the demand-side of electricity. An input-output approach combined with a sensitivity analysis has been developed to analyse the direct and indirect consumptions of electricity by eighteen manufacturing sectors in fifteen European countries, with indirect electricity demand related to the purchase of industrial products from other sectors which, in turn, require the consumption of electricity in their manufacturing processes. We identify the industrial transactions and sectors, which account for a greater share of electricity demand. In addition, the impact of an electricity price increase on the costs and prices of manufacturing products is simulated through a price model, allowing us to identify those sectors whose manufacturing costs are most sensitive to an increase in the electricity price. (author)

Assessing the influence of manufacturing sectors on electricity demand. A cross-country input-output approach

Energy Technology Data Exchange (ETDEWEB)

Tarancon, Miguel Angel; Callejas Albinana, Fernando [Faculty of Law and Social Sciences, Universidad de Castilla - La Mancha, Ronda de Toledo s/n, 13071 Ciudad Real (Spain); Del Rio, Pablo [Institute for Public Policies and Goods (IPP), Centro de Ciencias Humanas y Sociales, CSIC, C/Albasanz 26-28, 28037 Madrid (Spain)

2010-04-15

The production and consumption of electricity is a major source of CO{sub 2} emissions in Europe and elsewhere. In turn, the manufacturing sectors are significant end-users of electricity. In contrast to most papers in the literature, which focus on the supply-side, this study tackles the demand-side of electricity. An input-output approach combined with a sensitivity analysis has been developed to analyse the direct and indirect consumptions of electricity by eighteen manufacturing sectors in fifteen European countries, with indirect electricity demand related to the purchase of industrial products from other sectors which, in turn, require the consumption of electricity in their manufacturing processes. We identify the industrial transactions and sectors, which account for a greater share of electricity demand. In addition, the impact of an electricity price increase on the costs and prices of manufacturing products is simulated through a price model, allowing us to identify those sectors whose manufacturing costs are most sensitive to an increase in the electricity price. (author)

Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

Science.gov (United States)

Puls, Conor P.; Staley, Neal E.; Moon, Jeong-Sun; Robinson, Joshua A.; Campbell, Paul M.; Tedesco, Joseph L.; Myers-Ward, Rachael L.; Eddy, Charles R.; Gaskill, D. Kurt; Liu, Ying

2011-07-01

We show that an e-gun deposited dielectric impose severe limits on epitaxial graphene-based device performance based on Raman spectroscopy and low-temperature transport measurements. Specifically, we show from studies of epitaxial graphene Hall bars covered by SiO2 that the measured carrier density is strongly inhomogenous and predominantly induced by charged impurities at the grapheme/dielectric interface that limit mobility via Coulomb interactions. Our work emphasizes that material integration of epitaxial graphene and a gate dielectric is the next major road block towards the realization of graphene-based electronics.

Sodium levels in Canadian fast-food and sit-down restaurants.

Science.gov (United States)

Scourboutakos, Mary J; L'Abbé, Mary R

2013-01-31

To evaluate the sodium levels in Canadian restaurant and fast-food chain menu items. Nutrition information was collected from the websites of major sit-down (n=20) and fast-food (n=65) restaurants across Canada in 2010 and a database was constructed. Four thousand and forty-four meal items, baked goods, side dishes and children's items were analyzed. Sodium levels were compared to the recommended adequate intake level (AI), tolerable upper intake level (UL) and the US National Sodium Reduction Initiative (NSRI) targets. On average, individual sit-down restaurant menu items contained 1455 mg sodium/serving (or 97% of the AI level of 1500 mg/day). Forty percent of all sit-down restaurant items exceeded the AI for sodium and more than 22% of sit-down restaurant stir fry entrées, sandwiches/wraps, ribs, and pasta entrées with meat/seafood exceeded the daily UL for sodium (2300 mg). Fast-food restaurant meal items contained, on average, 1011 mg sodium (68% of the daily AI), while side dishes (from sit-down and fast-food restaurants) contained 736 mg (49%). Children's meal items contained, on average, 790 mg/serving (66% of the sodium AI for children of 1200 mg/day); a small number of children's items exceeded the children's daily UL. On average, 52% of establishments exceeded the 2012 NSRI density targets and 69% exceeded the 2014 targets. The sodium content in Canadian restaurant foods is alarmingly high. A population-wide sodium reduction strategy needs to address the high levels of sodium in restaurant foods.

Blind Cooperative Routing for Scalable and Energy-Efficient Internet of Things

KAUST Repository

Bader, Ahmed; Alouini, Mohamed-Slim

2016-01-01

Multihop networking is promoted in this paper for energy-efficient and highly-scalable Internet of Things (IoT). Recognizing concerns related to the scalability of classical multihop routing and medium access techniques, the use of blind cooperation

Anatase thin film with diverse epitaxial relationship grown on yttrium stabilized zirconia substrate by chemical vapor deposition

International Nuclear Information System (INIS)

Miyagi, Takahira; Ogawa, Tomoyuki; Kamei, Masayuki; Wada, Yoshiki; Mitsuhashi, Takefumi; Yamazaki, Atsushi

2003-01-01

An anatase epitaxial thin film with diverse epitaxial relationship, YSZ (001) // anatase (001), YSZ (010) // anatase (110), was grown on a single crystalline yttrium stabilized zirconia (YSZ) (001) substrate by metal organic chemical vapor deposition (MOCVD). The full width at half maximum (FWHM) of the (004) reflection of this anatase epitaxial film was 0.4deg, and the photoluminescence of this anatase epitaxial film showed visible emission with broad spectral width and large Stokes shift at room temperature. These results indicate that this anatase epitaxial film possessed almost equal crystalline quality compared with that grown under identical growth conditions on single crystalline SrTiO 3 substrate. (author)

Comparison of the top-down and bottom-up approach to fabricate nanowire-based Silicon/Germanium heterostructures

International Nuclear Information System (INIS)

Wolfsteller, A.; Geyer, N.; Nguyen-Duc, T.-K.; Das Kanungo, P.; Zakharov, N.D.; Reiche, M.; Erfurth, W.; Blumtritt, H.; Werner, P.; Goesele, U.

2010-01-01

Silicon nanowires (NWs) and vertical nanowire-based Si/Ge heterostructures are expected to be building blocks for future devices, e.g. field-effect transistors or thermoelectric elements. In principle two approaches can be applied to synthesise these NWs: the 'bottom-up' and the 'top-down' approach. The most common method for the former is the vapour-liquid-solid (VLS) mechanism which can also be applied to grow NWs by molecular beam epitaxy (MBE). Although MBE allows a precise growth control under highly reproducible conditions, the general nature of the growth process via a eutectic droplet prevents the synthesis of heterostructures with sharp interfaces and high Ge concentrations. We compare the VLS NW growth with two different top-down methods: The first is a combination of colloidal lithography and metal-assisted wet chemical etching, which is an inexpensive and fast method and results in large arrays of homogenous Si NWs with adjustable diameters down to 50 nm. The second top-down method combines the growth of Si/Ge superlattices by MBE with electron beam lithography and reactive ion etching. Again, large and homogeneous arrays of NWs were created, this time with a diameter of 40 nm and the Si/Ge superlattice inside.

Revisiting the Competitiveness of Romanian Manufacturing Industry

Directory of Open Access Journals (Sweden)

Ovidiu RUJAN

2007-01-01

Full Text Available Since the early 1990s the Romanian manufacturing industry has improved in many ways. This headway concerns the labour-intensive sector rather than the technology-intensive one. Apart from local entrepreneurship, foreign direct investments (FDI have been instrumental in enhancing industrial competitiveness. TheLisbon Agenda revival and Romania’s EU accession will be further inducements for Western businesses to shift production here to fight back both low-cost producers (typically from emerging Asia and more quality-oriented producers (typically from OECD countries. Hopefully, the FDI spillover effects will send positive vibrationsacross the economy, and tone down the asymmetry at the core of the manufacturing industry.

Towards a Scalable, Biomimetic, Antibacterial Coating

Science.gov (United States)

Dickson, Mary Nora

Corneal afflictions are the second leading cause of blindness worldwide. When a corneal transplant is unavailable or contraindicated, an artificial cornea device is the only chance to save sight. Bacterial or fungal biofilm build up on artificial cornea devices can lead to serious complications including the need for systemic antibiotic treatment and even explantation. As a result, much emphasis has been placed on anti-adhesion chemical coatings and antibiotic leeching coatings. These methods are not long-lasting, and microorganisms can eventually circumvent these measures. Thus, I have developed a surface topographical antimicrobial coating. Various surface structures including rough surfaces, superhydrophobic surfaces, and the natural surfaces of insects' wings and sharks' skin are promising anti-biofilm candidates, however none meet the criteria necessary for implementation on the surface of an artificial cornea device. In this thesis I: 1) developed scalable fabrication protocols for a library of biomimetic nanostructure polymer surfaces 2) assessed the potential these for poly(methyl methacrylate) nanopillars to kill or prevent formation of biofilm by E. coli bacteria and species of Pseudomonas and Staphylococcus bacteria and improved upon a proposed mechanism for the rupture of Gram-negative bacterial cell walls 3) developed a scalable, commercially viable method for producing antibacterial nanopillars on a curved, PMMA artificial cornea device and 4) developed scalable fabrication protocols for implantation of antibacterial nanopatterned surfaces on the surfaces of thermoplastic polyurethane materials, commonly used in catheter tubings. This project constitutes a first step towards fabrication of the first entirely PMMA artificial cornea device. The major finding of this work is that by precisely controlling the topography of a polymer surface at the nano-scale, we can kill adherent bacteria and prevent biofilm formation of certain pathogenic bacteria

Rate control scheme for consistent video quality in scalable video codec.

Science.gov (United States)

Seo, Chan-Won; Han, Jong-Ki; Nguyen, Truong Q

2011-08-01

Multimedia data delivered to mobile devices over wireless channels or the Internet are complicated by bandwidth fluctuation and the variety of mobile devices. Scalable video coding has been developed as an extension of H.264/AVC to solve this problem. Since scalable video codec provides various scalabilities to adapt the bitstream for the channel conditions and terminal types, scalable codec is one of the useful codecs for wired or wireless multimedia communication systems, such as IPTV and streaming services. In such scalable multimedia communication systems, video quality fluctuation degrades the visual perception significantly. It is important to efficiently use the target bits in order to maintain a consistent video quality or achieve a small distortion variation throughout the whole video sequence. The scheme proposed in this paper provides a useful function to control video quality in applications supporting scalability, whereas conventional schemes have been proposed to control video quality in the H.264 and MPEG-4 systems. The proposed algorithm decides the quantization parameter of the enhancement layer to maintain a consistent video quality throughout the entire sequence. The video quality of the enhancement layer is controlled based on a closed-form formula which utilizes the residual data and quantization error of the base layer. The simulation results show that the proposed algorithm controls the frame quality of the enhancement layer in a simple operation, where the parameter decision algorithm is applied to each frame.

STM investigation of epitaxial Si growth for the fabrication of a Si-based quantum computer

Energy Technology Data Exchange (ETDEWEB)

Oberbeck, Lars; Hallam, Toby; Curson, Neil J.; Simmons, Michelle Y.; Clark, Robert G

2003-05-15

We investigate the morphology of epitaxial Si layers grown on clean and on hydrogen terminated Si(0 0 1) to explore the growth strategy for the fabrication of a Si-based quantum computer. We use molecular beam epitaxy to deposit 5 monolayers of silicon at a temperature of 250 deg. C and scanning tunnelling microscopy to image the surface at room temperature after growth and after various rapid annealing steps in the temperature range of 350-600 deg. C. The epitaxial layer grown on the hydrogenated surface shows a significantly higher surface roughness due to a lower mobility of silicon surface atoms in the presence of hydrogen. Annealing at temperatures {>=}550 deg. C reduces the roughness of both epitaxial layers to the value of a clean silicon surface. However, the missing dimer defect density of the epitaxial layer grown on the hydrogenated surface remains higher by a factor of two compared to the layer grown on clean Si(0 0 1). Our results suggest a quantum computer growth strategy in which the hydrogen resist layer is desorbed before the epitaxial silicon layer is grown at low temperature to encapsulate phosphorus quantum bits.

GaN epitaxial layers grown on multilayer graphene by MOCVD

Science.gov (United States)

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe

2018-04-01

In this study, GaN epitaxial layers were successfully deposited on a multilayer graphene (MLG) by using metal-organic chemical vapor deposition (MOCVD). Highly crystalline orientations of the GaN films were confirmed through electron backscatter diffraction (EBSD). An epitaxial relationship between GaN films and MLG is unambiguously established by transmission electron microscope (TEM) analysis. The Raman spectra was used to analyze the internal stress of GaN films, and the spectrum shows residual tensile stress in the GaN films. Moreover, the results of the TEM analysis and Raman spectra indicate that the high quality of the MLG substrate is maintained even after the growth of the GaN film. This high-quality MLG makes it possible to easily remove epitaxial layers from the supporting substrate by micro-mechanical exfoliation technology. This work can aid in the development of transferable devices using GaN films.

Improved Manufacturing Performance of Screen Printed Carbon Electrodes through Material Formulation.

Science.gov (United States)

Jewell, Eifion; Philip, Bruce; Greenwood, Peter

2016-06-27

Printed carbon graphite materials are the primary common component in the majority of screen printed sensors. Screen printing allows a scalable manufacturing solution, accelerating the means by which novel sensing materials can make the transition from laboratory material to commercial product. A common bottleneck in any thick film printing process is the controlled drying of the carbon paste material. A study has been undertaken which examines the interaction between material solvent, printed film conductivity and process consistency. The study illustrates that it is possible to reduce the solvent boiling point to significantly increase process productivity while maintaining process consistency. The lower boiling point solvent also has a beneficial effect on the conductivity of the film, reducing the sheet resistance. It is proposed that this is a result of greater film stressing increasing charge percolation through greater inter particle contact. Simulations of material performance and drying illustrate that a multi layered printing provides a more time efficient manufacturing method. The findings have implications for the volume manufacturing of the carbon sensor electrodes but also have implications for other applications where conductive carbon is used, such as electrical circuits and photovoltaic devices.

Interaction of GaN epitaxial layers with atomic hydrogen

Energy Technology Data Exchange (ETDEWEB)

Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S

2004-08-15

GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H{sub 2} plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states.

Interaction of GaN epitaxial layers with atomic hydrogen

International Nuclear Information System (INIS)

Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S.

2004-01-01

GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H 2 plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states

A comparative study of transport properties in polycrystalline and epitaxial chromium nitride films

KAUST Repository

Duan, X. F.

2013-01-08

Polycrystalline CrNx films on Si(100) and glass substrates and epitaxial CrNx films on MgO(100) substrates were fabricated by reactive sputtering with different nitrogen gas flow rates (fN2). With the increase of fN2, a lattice phase transformation from metallic Cr2N to semiconducting CrN appears in both polycrystalline and epitaxial CrNx films. At fN2= 100 sccm, the low-temperature conductance mechanism is dominated by both Mott and Efros-Shklovskii variable-range hopping in either polycrystalline or epitaxial CrN films. In all of the polycrystalline and epitaxial films, only the polycrystalline CrNx films fabricated at fN2 = 30 and 50 sccm exhibit a discontinuity in ρ(T) curves at 260-280 K, indicating that both the N-vacancy concentration and grain boundaries play important roles in the metal-insulator transition. © 2013 American Institute of Physics.

Measures of International Manufacturing and Trade of Clean Energy Technologies

Energy Technology Data Exchange (ETDEWEB)

Engel-Cox, Jill; Sandor, Debbie; Keyser, David; Mann, Margaret

2017-05-25

The technologies that produce clean energy, such as solar photovoltaic panels and lithium ion batteries for electric vehicles, are globally manufactured and traded. As demand and deployment of these technologies grows exponentially, the innovation to reach significant economies of scale and drive down energy production costs becomes less in the technology and more in the manufacturing of the technology. Manufacturing innovations and other manufacturing decisions can reduce costs of labor, materials, equipment, operating costs, and transportation, across all the links in the supply chain. To better understand the manufacturing aspect of the clean energy economy, we have developed key metrics for systematically measuring and benchmarking international manufacturing of clean energy technologies. The metrics are: trade, market size, manufacturing value-added, and manufacturing capacity and production. These metrics were applied to twelve global economies and four representative technologies: wind turbine components, crystalline silicon solar photovoltaic modules, vehicle lithium ion battery cells, and light emitting diode packages for efficient lighting and other consumer products. The results indicated that clean energy technologies are being developed via complex, dynamic, and global supply chains, with individual economies benefiting from different technologies and links in the supply chain, through both domestic manufacturing and global trade.

Radiation hardness of silicon detectors manufactured on epitaxial material and FZ bulk enriched with oxygen, carbon, tin and platinum

CERN Document Server

Ruzin, A; Glaser, M; Lemeilleur, F; Talamonti, R; Watts, S; Zanet, A

1999-01-01

Recent results on the radiation hardness of silicon detectors fabricated on epitaxial and float zone bulk silicon enriched by various impurities, such as carbon, oxygen, tin and platinum are reported. A new methodology of measurements of electrical properties of the devices has been utilized in the experiment. It has been shown that in the case of irradiation by protons, oxygen enriched silicon has better radiation hardness than standard float zone silicon. The carbon enriched silicon detectors, on the other hand, exhibited significantly inferior radiation hardness compared to standard detectors. This study shows for the first time, a violation of the widely used normalization technique of the various particle irradiations by NIEL coefficients. The study has been carried out in the framework of the RD48 (ROSE) collaboration, which studies the radiation hardening of silicon detectors. (5 refs).

Design Intend Solving: Dynamic Composition Method for Innovative Design Based on Virtual Cloud Manufacturing Resource Generators

Directory of Open Access Journals (Sweden)

Yi-Cong Gao

2013-01-01

Full Text Available Recently, there has been growing interest in composition of cloud manufacturing resources (CMRs. Composition of CMRs is a feasible innovation to fulfill the user request while single cloud manufacturing resource cannot satisfy the functionality required by the user. In this paper, we propose a new case-based approach for the composition of CMRs. The basic idea of the present approach is to provide a computational framework for the composition of CMRs by imitating the common design method of reviewing past designs to obtain solution concepts for a new composite cloud manufacturing resource (CCMR. A notion of virtual cloud manufacturing resource generators (VCMRGs is introduced to conceptualize and represent underlying CCMRs contained in existing CCMRs. VCMRGs are derived from previous CCMRs and serve as new conceptual building blocks for the composition of CMRs. Feasible composite CMRs are generated by combining VCMRGs using some adaptation rules. The reuse of prior CCMRs is accomplished via VCMRGs within the framework of case-based reasoning. We demonstrate that the proposed approach yields lower execution time for fulfilling user request and shows good scalability.

Human pluripotent stem cell-derived products: advances towards robust, scalable and cost-effective manufacturing strategies.

Science.gov (United States)

Jenkins, Michael J; Farid, Suzanne S

2015-01-01

The ability to develop cost-effective, scalable and robust bioprocesses for human pluripotent stem cells (hPSCs) will be key to their commercial success as cell therapies and tools for use in drug screening and disease modelling studies. This review outlines key process economic drivers for hPSCs and progress made on improving the economic and operational feasibility of hPSC bioprocesses. Factors influencing key cost metrics, namely capital investment and cost of goods, for hPSCs are discussed. Step efficiencies particularly for differentiation, media requirements and technology choice are amongst the key process economic drivers identified for hPSCs. Progress made to address these cost drivers in hPSC bioprocessing strategies is discussed. These include improving expansion and differentiation yields in planar and bioreactor technologies, the development of xeno-free media and microcarrier coatings, identification of optimal bioprocess operating conditions to control cell fate and the development of directed differentiation protocols that reduce reliance on expensive morphogens such as growth factors and small molecules. These approaches offer methods to further optimise hPSC bioprocessing in terms of its commercial feasibility. © 2014 The Authors. Biotechnology Journal published by Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

Ge-on-Si : Single-Crystal Selective Epitaxial Growth in a CVD Reactor

NARCIS (Netherlands)

Sammak, A.; De Boer, W.B.; Nanver, L.K.

2012-01-01

A standard Si/SiGe ASM CVD reactor that was recently modified for merging GaAs and Si epitaxial growth in one system is utilized to achieve intrinsic and doped epitaxial Ge-on-Si with low threading dislocation and defect densities. For this purpose, the system is equipped with 2% diluted GeH4 as the

Control growth of silicon nanocolumns' epitaxy on silicon nanowires

Energy Technology Data Exchange (ETDEWEB)

Chong, Su Kong, E-mail: sukong1985@yahoo.com.my [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia); Dee, Chang Fu [Universiti Kebangsaan Malaysia (UKM), Institute of Microengineering and Nanoelectronics (IMEN) (Malaysia); Yahya, Noorhana [Universiti Teknologi PETRONAS, Faculty of Science and Information Technology (Malaysia); Rahman, Saadah Abdul [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia)

2013-04-15

The epitaxial growth of Si nanocolumns on Si nanowires was studied using hot-wire chemical vapor deposition. A single-crystalline and surface oxide-free Si nanowire core (core radius {approx}21 {+-} 5 nm) induced by indium crystal seed was used as a substance for the vapor phase epitaxial growth. The growth process is initiated by sidewall facets, which then nucleate upon certain thickness to form Si islands and further grow to form nanocolumns. The Si nanocolumns with diameter of 10-20 nm and aspect ratio up to 10 can be epitaxially grown on the surface of nanowires. The results showed that the radial growth rate of the Si nanocolumns remains constant with the increase of deposition time. Meanwhile, the radial growth rates are controllable by manipulating the hydrogen to silane gas flow rate ratio. The optical antireflection properties of the Si nanocolumns' decorated SiNW arrays are discussed in the text.

Silicon epitaxy on textured double layer porous silicon by LPCVD

International Nuclear Information System (INIS)

Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

2010-01-01

Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

Molecular-beam epitaxy growth of high-performance midinfrared diode lasers

International Nuclear Information System (INIS)

Turner, G.W.; Choi, H.K.; Calawa, D.R.

1994-01-01

Recent advances in the performance of GaInAsSb/AlGaAsSb quantum-well diode lasers have been directly related to improvements in the quality of the molecular-beam epitaxy (MBE)-grown epitaxial layers. These improvements have been based on careful measurement and control of lattice matching and intentional strain, changes in shutter sequencing at interfaces, and a generally better understanding of the growth of Sb-based epitaxial materials. By using this improved MBE-grown material, significantly enhanced performance has been obtained for midinfrared lasers. These lasers, which are capable of ∼2-μm emission at room temperature, presently exhibit threshold current densities of 143 A/cm 2 , continuous wave powers of 1.3 W, and diffraction-limited powers of 120 mW. Such high-performance midinfrared diode lasers are of interest for a wide variety of applications, including eye-safe laser radar, remote sensing of atmospheric contaminants and wind turbulence, laser surgery, and pumping of solid-state laser media. 12 refs., 3 figs

The preparation of Zn-ferrite epitaxial thin film from epitaxial Fe3O4:ZnO multilayers by ion beam sputtering deposition

International Nuclear Information System (INIS)

Su, Hui-Chia; Dai, Jeng-Yi; Liao, Yen-Fa; Wu, Yu-Han; Huang, J.C.A.; Lee, Chih-Hao

2010-01-01

A new method to grow a well-ordered epitaxial ZnFe 2 O 4 thin film on Al 2 O 3 (0001) substrate is described in this work. The samples were made by annealing the ZnO/Fe 3 O 4 multilayer which was grown with low energy ion beam sputtering deposition. Both the Fe 3 O 4 and ZnO layers were found grown epitaxially at low temperature and an epitaxial ZnFe 2 O 4 thin film was formed after annealing at 1000 o C. X-ray diffraction shows the ZnFe 2 O 4 film is grown with an orientation of ZnFe 2 O 4 (111)//Al 2 O 3 (0001) and ZnFe 2 O 4 (1-10)//Al 2 O 3 (11-20). X-ray absorption spectroscopy studies show that Zn 2+ atoms replace the tetrahedral Fe 2+ atoms in Fe 3 O 4 during the annealing. The magnetic properties measured by vibrating sample magnetometer show that the saturation magnetization of ZnFe 2 O 4 grown from ZnO/Fe 3 O 4 multilayer reaches the bulk value after the annealing process.

E-Business Initiatives in Indonesian Manufacturing SMEs

Directory of Open Access Journals (Sweden)

Singgih Saptadi

2014-01-01

Full Text Available The role of information technology (IT in improving companies’ competitiveness, including small and medium enterprises (SMEs, has been widely accepted. But, the IT investment will be in vain, if SMEs do not align their business and IT. There is a need to develop a framework of business-IT alignment. The framework development requires an understanding of the patterns of IT implementation in supporting SMEs’ business (e-business initiatives. This paper presents an empirical study on e-business initiatives in Indonesian manufacturing SMEs. The study uses 41 business processes that are grouped into three business focuses: supplier side, internal side and customer side. Based on the complexity of IT support to business processes, supplier side score, internal side score, customer side score and global score can be calculated. These scores are used to develop e-business initiative groups by using cluster analysis. After validated using discriminant analysis, the cluster analysis gives five e-business initiatives. First initiative is e-business implementation in three sides of business focuses, although in the early stage. Second initiative is IT implementation with internal side focus. Third initiative is e-business with customer side focus. The fourth is initiative that focuses on internal and customer side. The last is e-business initiative that balances and extends IT implementation on the three sides of business focuses. Then, this paper explains the differences between e-business initiatives.

Installation, care, and maintenance of wood shake and shingle siding

Science.gov (United States)

Jack Dwyer; Tony Bonura; Arnie Nebelsick; Sam Williams; Christopher G. Hunt

2011-01-01

This article gives general guidelines for selection, installation, finishing, and maintenance of wood shakes and shingles. The authors gathered information from a variety of sources: research publications on wood finishing, technical data sheets from paint manufacturers, installation instructions for shake and shingle siding, and interviews with experts having...

Rapid prototyping of multi-scale biomedical microdevices by combining additive manufacturing technologies.

Science.gov (United States)

Hengsbach, Stefan; Lantada, Andrés Díaz

2014-08-01

The possibility of designing and manufacturing biomedical microdevices with multiple length-scale geometries can help to promote special interactions both with their environment and with surrounding biological systems. These interactions aim to enhance biocompatibility and overall performance by using biomimetic approaches. In this paper, we present a design and manufacturing procedure for obtaining multi-scale biomedical microsystems based on the combination of two additive manufacturing processes: a conventional laser writer to manufacture the overall device structure, and a direct-laser writer based on two-photon polymerization to yield finer details. The process excels for its versatility, accuracy and manufacturing speed and allows for the manufacture of microsystems and implants with overall sizes up to several millimeters and with details down to sub-micrometric structures. As an application example we have focused on manufacturing a biomedical microsystem to analyze the impact of microtextured surfaces on cell motility. This process yielded a relevant increase in precision and manufacturing speed when compared with more conventional rapid prototyping procedures.

Powder free PECVD epitaxial silicon by plasma pulsing or increasing the growth temperature

Science.gov (United States)

Chen, Wanghua; Maurice, Jean-Luc; Vanel, Jean-Charles; Cabarrocas, Pere Roca i.

2018-06-01

Crystalline silicon thin films are promising candidates for low cost and flexible photovoltaics. Among various synthesis techniques, epitaxial growth via low temperature plasma-enhanced chemical vapor deposition is an interesting choice because of two low temperature related benefits: low thermal budget and better doping profile control. However, increasing the growth rate is a tricky issue because the agglomeration of clusters required for epitaxy leads to powder formation in the plasma. In this work, we have measured precisely the time evolution of the self-bias voltage in silane/hydrogen plasmas at millisecond time scale, for different values of the direct-current bias voltage applied to the radio frequency (RF) electrode and growth temperatures. We demonstrate that the decisive factor to increase the epitaxial growth rate, i.e. the inhibition of the agglomeration of plasma-born clusters, can be obtained by decreasing the RF OFF time or increasing the growth temperature. The influence of these two parameters on the growth rate and epitaxial film quality is also presented.

Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer

International Nuclear Information System (INIS)

Onuma, T.; Chichibu, S.F.; Uedono, A.; Yoo, Y.-Z.; Chikyow, T.; Sota, T.; Kawasaki, M.; Koinuma, H.

2004-01-01

Nonradiative photoluminescence (PL) lifetime (τ nr ) and point defect density in the (0001) ZnO epilayer grown on (111) Si substrates by laser-assisted molecular-beam epitaxy (L-MBE) using a (0001) ZnS epitaxial buffer layer were compared with those in the ZnO films on (111) and (001) Si substrates prepared by direct transformation of ZnS epilayers on Si by thermal oxidation [Yoo et al., Appl. Phys. Lett. 78, 616 (2001)]. Both the ZnO films exhibited excitonic reflectance anomalies and corresponding PL peaks at low temperature, and the density or size of vacancy-type point defects (Zn vacancies), which were measured by the monoenergetic positron annihilation measurement, in the L-MBE epilayer was lower than that in the films prepared by the oxidation transformation. The ZnO epilayer grown on a (0001) ZnS epitaxial buffer on (111) Si exhibited longer τ nr of 105 ps at room temperature

Laser molecular beam epitaxy of ZnO thin films and heterostructures

International Nuclear Information System (INIS)

Opel, Matthias; Geprägs, Stephan; Althammer, Matthias; Brenninger, Thomas; Gross, Rudolf

2014-01-01

We report on the growth of epitaxial ZnO thin films and ZnO-based heterostructures on sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent developments in laser-MBE such as flexible ultraviolet laser beam optics, infrared laser heating systems or the use of atomic oxygen and nitrogen sources, and describe the technical realization of our advanced laser-MBE system. Then we describe the optimization of the deposition parameters for ZnO films such as laser fluence and substrate temperature and the use of buffer layers. The detailed structural characterization by x-ray analysis and transmission electron microscopy shows that epitaxial ZnO thin films with high structural quality can be achieved, as demonstrated by a small out-of-plane and in-plane mosaic spread as well as the absence of rotational domains. We also demonstrate the heteroepitaxial growth of ZnO-based multilayers as a prerequisite for spin transport experiments and the realization of spintronic devices. As an example, we show that TiN/Co/ZnO/Ni/Au multilayer stacks can be grown on (0 0 0 1)-oriented sapphire with good structural quality of all layers and well defined in-plane epitaxial relations. (paper)

Scalable Integrated Region-Based Image Retrieval Using IRM and Statistical Clustering.

Science.gov (United States)

Wang, James Z.; Du, Yanping

Statistical clustering is critical in designing scalable image retrieval systems. This paper presents a scalable algorithm for indexing and retrieving images based on region segmentation. The method uses statistical clustering on region features and IRM (Integrated Region Matching), a measure developed to evaluate overall similarity between images…

The Influence of Conjugated Polymer Side Chain Manipulation on the Efficiency and Stability of Polymer Solar Cells

DEFF Research Database (Denmark)

Heckler, Ilona Maria; Kesters, Jurgen; Defour, Maxime

2016-01-01

]thiazole (TzTz) acceptor units, were selected toward effective device scalability by roll-coating. The influence of the partial exchange (5% or 10%) of the solubilizing 2-hexyldecyloxy by alternative 2-phenylethoxy groups on efficiency and stability was investigated. With an increasing 2-phenylethoxy ratio...... studies under constant sun irradiance showed a diminishing initial degradation rate for the BT-based devices upon including the alternative side chains, whereas the (more stable) TzTz-based devices degraded at a faster rate from the start of the experiment upon partly exchanging the side chains. No clear......The stability of polymer solar cells (PSCs) can be influenced by the introduction of particular moieties on the conjugated polymer side chains. In this study, two series of donor-acceptor copolymers, based on bis(thienyl)dialkoxybenzene donor and benzo[c][1,2,5]thiadiazole (BT) or thiazolo[5,4-d...

Intrinsic spin polarized electronic structure of CrO2 epitaxial film revealed by bulk-sensitive spin-resolved photoemission spectroscopy

International Nuclear Information System (INIS)

Fujiwara, Hirokazu; Sunagawa, Masanori; Kittaka, Tomoko; Terashima, Kensei; Wakita, Takanori; Muraoka, Yuji; Yokoya, Takayoshi

2015-01-01

We have performed bulk-sensitive spin-resolved photoemission spectroscopy in order to clarify the intrinsic spin-resolved electronic states of half-metallic ferromagnet CrO 2 . We used CrO 2 epitaxial films on TiO 2 (100), which shows a peak at 1 eV with a clear Fermi edge, consistent with the bulk-sensitive PES spectrum for CrO 2 . In spin-resolved spectra at 40 K, while the Fermi edge was observed in the spin up (majority spin) state, no states at the Fermi level (E F ) with an energy gap of 0.5 eV below E F were observed in the spin down (minority spin) state. At 300 K, the gap in the spin down state closes. These results are consistent with resistivity measurements and magnetic hysteresis curves of the fabricated CrO 2 film, constituting spectroscopic evidence for the half-metallicity of CrO 2 at low temperature and reducing the spin polarization at room temperature. We also discuss the electron correlation effects of Cr 3d

Modulating laser intensity profile ellipticity for microstructural control during metal additive manufacturing

International Nuclear Information System (INIS)

Roehling, Tien T.; Wu, Sheldon S.Q.; Khairallah, Saad A.; Roehling, John D.; Soezeri, S. Stefan; Crumb, Michael F.; Matthews, Manyalibo J.

2017-01-01

Additively manufactured (AM) metals are often highly textured, containing large columnar grains that initiate epitaxially under steep temperature gradients and rapid solidification conditions. These unique microstructures partially account for the massive property disparity existing between AM and conventionally processed alloys. Although equiaxed grains are desirable for isotropic mechanical behavior, the columnar-to-equiaxed transition remains difficult to predict for conventional solidification processes, and much more so for AM. In this study, the effects of laser intensity profile ellipticity on melt track macrostructures and microstructures were studied in 316L stainless steel. Experimental results were supported by temperature gradients and melt velocities simulated using the ALE3D multi-physics code. As a general trend, columnar grains preferentially formed with increasing laser power and scan speed for all beam profiles. However, when conduction mode laser heating occurs, scan parameters that result in coarse columnar microstructures using Gaussian profiles produce equiaxed or mixed equiaxed-columnar microstructures using elliptical profiles. By modulating spatial laser intensity profiles on the fly, site-specific microstructures and properties can be directly engineered into additively manufactured parts.

Characterization procedures for double-sided silicon microstrip detectors

Energy Technology Data Exchange (ETDEWEB)

Bruner, N.L. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.; Frautschi, M.A. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.; Hoeferkamp, M.R. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.; Seidel, S.C. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.

1995-08-15

Since double-sided silicon microstrip detectors are still evolving technologically and are not yet commercially available, they require extensive electrical evaluation by the user to ensure they were manufactured to specifications. In addition, measurements must be performed to determine detector operating conditions. Procedures for measuring the following quantities are described: - Leakage current, - Depletion voltage, - Bias resistance, - Interstrip resistance, - Coupling capacitance, - Coupling capacitor breakdown voltage. (orig.).

Characterization procedures for double-sided silicon microstrip detectors

International Nuclear Information System (INIS)

Bruner, N.L.; Frautschi, M.A.; Hoeferkamp, M.R.; Seidel, S.C.

1995-01-01

Since double-sided silicon microstrip detectors are still evolving technologically and are not yet commercially available, they require extensive electrical evaluation by the user to ensure they were manufactured to specifications. In addition, measurements must be performed to determine detector operating conditions. Procedures for measuring the following quantities are described: - Leakage current, - Depletion voltage, - Bias resistance, - Interstrip resistance, - Coupling capacitance, - Coupling capacitor breakdown voltage. (orig.)

Scalable fast multipole accelerated vortex methods

KAUST Repository

Hu, Qi; Gumerov, Nail A.; Yokota, Rio; Barba, Lorena A.; Duraiswami, Ramani

2014-01-01

-node communication and load balance efficiently, with only a small parallel construction overhead. This algorithm can scale to large-sized clusters showing both strong and weak scalability. Careful error and timing trade-off analysis are also performed for the cutoff

Mapping practices of project management – merging top-down and bottom-up perspectives

DEFF Research Database (Denmark)

Thuesen, Christian

2015-01-01

This paper presents a new methodology for studying different accounts of project management practices based on network mapping and analysis. Drawing upon network mapping and visualization as an analytical strategy top-down and bottom-up accounts of project management practice are analysed...... and compared. The analysis initially reveals a substantial difference between the top-down and bottom-up accounts of practice. Furthermore it identifies a soft side of project management that is central in the bottom-up account but absent from the top-down. Finally, the study shows that network mapping...

Epitaxial YBa2Cu3O7-δ/Sr2RuO4 heterostructures

International Nuclear Information System (INIS)

Schlom, D.G.; Merritt, B.A.; Madhavan, S.

1997-01-01

The anisotropic oxide superconductors YBa 2 Cu 3 O 7-δ and Sr 2 RuO 4 have been epitaxially combined in various ways (c-axis on c-axis, c-axis on a-axis, and a-axis on a-axis) though the use of appropriate substrates. Phase-pure a-axis oriented or c-axis oriented epitaxial Sr 2 RuO 4 films were grown by pulsed laser deposition. YBa 2 Cu 3 O 7-δ films were then grown on both orientations of Sr 2 RuO 4 films and the resulting epitaxy was characterized

Emerging Global Trends in Advanced Manufacturing

Science.gov (United States)

2012-03-01

facility. Such distributed manufacturing could be made accessible to large masses even in remote areas (Ehmann 2011). For example, Zara is a Spanish...consumers. It has tightened its supply-chain management so that the consumer “pulls” the design. Zara uses state-of-the-art IT and distribution...systems to collect data daily on trends so they can quickly turn out new designs. Zara keeps costs down by using existing materials in stock and through

Layered growth model and epitaxial growth structures for SiCAlN alloys

International Nuclear Information System (INIS)

Liu Zhaoqing; Ni Jun; Su Xiaoao; Dai Zhenhong

2009-01-01

Epitaxial growth structures for (SiC) 1-x (AlN) x alloys are studied using a layered growth model. First-principle calculations are used to determine the parameters in the layered growth model. The phase diagrams of epitaxial growth are given. There is a rich variety of the new metastable polytype structures at x=1/6 ,1/5 ,1/4 ,1/3 , and 1/2 in the layered growth phase diagrams. We have also calculated the electronic properties of the short periodical SiCAlN alloys predicted by our layered growth model. The results show that various ordered structures of (SiC) 1-x (AlN) x alloys with the band gaps over a wide range are possible to be synthesized by epitaxial growth.

Scalable Resolution Display Walls

KAUST Repository

Leigh, Jason; Johnson, Andrew; Renambot, Luc; Peterka, Tom; Jeong, Byungil; Sandin, Daniel J.; Talandis, Jonas; Jagodic, Ratko; Nam, Sungwon; Hur, Hyejung; Sun, Yiwen

2013-01-01

This article will describe the progress since 2000 on research and development in 2-D and 3-D scalable resolution display walls that are built from tiling individual lower resolution flat panel displays. The article will describe approaches and trends in display hardware construction, middleware architecture, and user-interaction design. The article will also highlight examples of use cases and the benefits the technology has brought to their respective disciplines. © 1963-2012 IEEE.

Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

Science.gov (United States)

McKee, Rodney A.; Walker, Frederick J.

1993-01-01

A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

Design and manufacture of steam generators for replacement

International Nuclear Information System (INIS)

Hirano, Hiroshi; Kuri, Syuhei

1995-01-01

The basic specification of the steam generators for replacement as heat exchangers (the pressure, temperature, flow rate and thermal output on primary and secondary sides) is set same as that of steam generators before replacement, but the latest design reflecting the operation experience obtained so far and taking the countermeasures for preventing heating tube damage in it is adopted, such as the heating tubes made of TT 690 alloy, the tube support plates with four-lobe shape tube holes made of stainless steel, the stainless steel rest fittings of three in one set and so on. After the heating tube break accident in Mihama No. 2 plant, the quality control was further strengthened. The comparison of the specifications of the steam generators of respective plants before and after the replacement is shown. The main objective of improving steam generators is the heightening of the reliability of heating tubes against intergranular attack and primary water stress corrosion cracking. The improvements of heating tube material, tube support plate material, secondary side heat flow, the shape of tube holes of tube support plates, the method of expanding heating tubes, and vibration-controlling fittings are explained. As to the manufacturing procedure and quality control, the manufacture of raw materials, the build-up welding of tube plates, the manufacture of lower half shell plates, the tube hole making of support plates, the insection of outer cylinder, flow rate distribution plate. Support plates and heating tubes, the sealing welding and expanding of heating tubes, the fixing of rest fittings, the manufacture and fixing of water chamber cover, the manufacture of upper half shell, the fixing of parts inside it, the final joint and inspection are described. (K.I.)

Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Growden, Tyler A.; Fakhimi, Parastou; Berger, Paul R.; Storm, David F.; Meyer, David J.; Zhang, Weidong; Brown, Elliott R.

2016-01-01

AlN/GaN resonant tunneling diodes grown on low dislocation density semi-insulating bulk GaN substrates via plasma-assisted molecular-beam epitaxy are reported. The devices were fabricated using a six mask level, fully isolated process. Stable room temperature negative differential resistance (NDR) was observed across the entire sample. The NDR exhibited no hysteresis, background light sensitivity, or degradation of any kind after more than 1000 continuous up-and-down voltage sweeps. The sample exhibited a ∼90% yield of operational devices which routinely displayed an average peak current density of 2.7 kA/cm 2 and a peak-to-valley current ratio of ≈1.15 across different sizes.

Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Growden, Tyler A.; Fakhimi, Parastou; Berger, Paul R., E-mail: pberger@ieee.org [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Storm, David F.; Meyer, David J. [U.S. Naval Research Laboratory, Washington, DC 20375 (United States); Zhang, Weidong; Brown, Elliott R. [Departments of Physics and Electrical Engineering, Wright State University, Dayton, Ohio 45435 (United States)

2016-08-22

AlN/GaN resonant tunneling diodes grown on low dislocation density semi-insulating bulk GaN substrates via plasma-assisted molecular-beam epitaxy are reported. The devices were fabricated using a six mask level, fully isolated process. Stable room temperature negative differential resistance (NDR) was observed across the entire sample. The NDR exhibited no hysteresis, background light sensitivity, or degradation of any kind after more than 1000 continuous up-and-down voltage sweeps. The sample exhibited a ∼90% yield of operational devices which routinely displayed an average peak current density of 2.7 kA/cm{sup 2} and a peak-to-valley current ratio of ≈1.15 across different sizes.

Evaluation of 3D printed anatomically scalable transfemoral prosthetic knee.

Science.gov (United States)

Ramakrishnan, Tyagi; Schlafly, Millicent; Reed, Kyle B

2017-07-01

This case study compares a transfemoral amputee's gait while using the existing Ossur Total Knee 2000 and our novel 3D printed anatomically scalable transfemoral prosthetic knee. The anatomically scalable transfemoral prosthetic knee is 3D printed out of a carbon-fiber and nylon composite that has a gear-mesh coupling with a hard-stop weight-actuated locking mechanism aided by a cross-linked four-bar spring mechanism. This design can be scaled using anatomical dimensions of a human femur and tibia to have a unique fit for each user. The transfemoral amputee who was tested is high functioning and walked on the Computer Assisted Rehabilitation Environment (CAREN) at a self-selected pace. The motion capture and force data that was collected showed that there were distinct differences in the gait dynamics. The data was used to perform the Combined Gait Asymmetry Metric (CGAM), where the scores revealed that the overall asymmetry of the gait on the Ossur Total Knee was more asymmetric than the anatomically scalable transfemoral prosthetic knee. The anatomically scalable transfemoral prosthetic knee had higher peak knee flexion that caused a large step time asymmetry. This made walking on the anatomically scalable transfemoral prosthetic knee more strenuous due to the compensatory movements in adapting to the different dynamics. This can be overcome by tuning the cross-linked spring mechanism to emulate the dynamics of the subject better. The subject stated that the knee would be good for daily use and has the potential to be adapted as a running knee.

Multi-phase AC/AC step-down converter for distribution systems

Science.gov (United States)

Aeloiza, Eddy C.; Burgos, Rolando P.

2017-10-25

A step-down AC/AC converter for use in an electric distribution system includes at least one chopper circuit for each one of a plurality of phases of the AC power, each chopper circuit including a four-quadrant switch coupled in series between primary and secondary sides of the chopper circuit and a current-bidirectional two-quadrant switch coupled between the secondary side of the chopper circuit and a common node. Each current-bidirectional two-quadrant switch is oriented in the same direction, with respect to the secondary side of the corresponding chopper circuit and the common node. The converter further includes a control circuit configured to pulse-width-modulate control inputs of the switches, to convert a first multiphase AC voltage at the primary sides of the chopper circuits to a second multiphase AC voltage at the secondary sides of the chopper circuits, the second multiphase AC voltage being lower in voltage than the first multiphase AC voltage.

Scalable optical switches for computing applications

NARCIS (Netherlands)

White, I.H.; Aw, E.T.; Williams, K.A.; Wang, Haibo; Wonfor, A.; Penty, R.V.

2009-01-01

A scalable photonic interconnection network architecture is proposed whereby a Clos network is populated with broadcast-and-select stages. This enables the efficient exploitation of an emerging class of photonic integrated switch fabric. A low distortion space switch technology based on recently

Seed layer technique for high quality epitaxial manganite films

Directory of Open Access Journals (Sweden)

P. Graziosi

2016-08-01

Full Text Available We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

Zirconia thin films from aqueous precursors: Processing, microstructural development, and epitaxial growth

International Nuclear Information System (INIS)

Miller, K.T.

1991-01-01

Thin films of ZrO 2 (Y 2 O 3 ) were prepared from aqueous salt precursors by spin coating. Films were pyrolyzed to produce porous polycrystalline thin films of 5-10 nm grain size. Subsequent microstructural development depends greatly upon the nature of the substrate. Upon randomly oriented sapphire, the films initially sintered to full density; further heat treatment and grain growth causes these films to break into interconnected islands and finally isolated particles. Thermodynamic calculations predict that breakup is energetically favorable when the grain-size film-thickness ratio exceeds a critical value. Upon basal-plane-oriented sapphire, grain growth and breakup prefer the (100) oriented grains, presumably because this orientation is a special interface of low energy. The isolated, oriented grains produced by film breakup act as seeds for the growth of newly deposited material. Upon (100) cubic zirconia, true epitaxial films develop. Epitaxial growth was observed for lattice mismatches up to 1.59%. Growth proceeds from a fine epitaxial layer which is produced during the initial stages of heat treatment, consuming the porous polycrystalline material and producing a dense epitaxial thin film whose misfit is accommodated by a combination of film strain and misfit dislocations

Ferroelectricity down to at least 2 nm in multiferroic BiFeO3 epitaxial thin films

International Nuclear Information System (INIS)

Bea, H.; Fusil, S.; Bouzehouane, K.; Sirena, M.; Herranz, G.; Jacquet, E.; Contour, J.-P.; Barthelemy, A.; Bibes, M.

2006-01-01

We report here on the preservation of ferroelectricity down to 2 nm in BiFeO 3 ultrathin films. The electric polarization can be switched reversibly and is stable over several days. Our findings insight on the fundamental problem of ferroelectricity at low thickness and confirm the potential of BiFeO 3 as a lead-free ferroelectric and multiferroic material for nanoscale devices. (author)

Scalable Algorithms for Adaptive Statistical Designs

Directory of Open Access Journals (Sweden)

Robert Oehmke

2000-01-01

Full Text Available We present a scalable, high-performance solution to multidimensional recurrences that arise in adaptive statistical designs. Adaptive designs are an important class of learning algorithms for a stochastic environment, and we focus on the problem of optimally assigning patients to treatments in clinical trials. While adaptive designs have significant ethical and cost advantages, they are rarely utilized because of the complexity of optimizing and analyzing them. Computational challenges include massive memory requirements, few calculations per memory access, and multiply-nested loops with dynamic indices. We analyze the effects of various parallelization options, and while standard approaches do not work well, with effort an efficient, highly scalable program can be developed. This allows us to solve problems thousands of times more complex than those solved previously, which helps make adaptive designs practical. Further, our work applies to many other problems involving neighbor recurrences, such as generalized string matching.

Hard gap in epitaxial semiconductor-superconductor nanowires

DEFF Research Database (Denmark)

Chang, W.; Albrecht, S. M.; Jespersen, T. S.

2015-01-01

a continuum of subgap states---a situation that nullifies topological protection. Here, we report a hard superconducting gap induced by proximity effect in a semiconductor, using epitaxial Al-InAs superconductor-semiconductor nanowires. The hard gap, along with favorable material properties and gate...

Epitaxial Garnets and Hexagonal Ferrites.

Science.gov (United States)

1982-04-20

guide growth of the epitaxial YIG films. Aluminum or gallium substitu- tions for iron were used in combination with lanthanum substitutions for yttrium... gallate spinel sub- strates. There was no difficulty with nucleation in the melt and film quality appeared to be similar to that observed previously...hexagonal ferrites. We succeeded in growing the M-type lead hexaferrite (magnetoplumbite) on gallate spinel substrates. We found that the PbO-based

Graphene nanoribbons epitaxy on boron nitride

Energy Technology Data Exchange (ETDEWEB)

Lu, Xiaobo; Wang, Shuopei; Wu, Shuang; Chen, Peng; Zhang, Jing; Zhao, Jing; Meng, Jianling; Xie, Guibai; Wang, Duoming; Wang, Guole; Zhang, Ting Ting; Yang, Rong; Shi, Dongxia [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Yang, Wei [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Laboratoire Pierre Aigrain, ENS-CNRS UMR 8551, Universités Pierre et Marie Curie and Paris-Diderot, 24 rue Lhomond, 75231 Paris Cedex 05 (France); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Zhang, Guangyu, E-mail: gyzhang@aphy.iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

2016-03-14

In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ∼15 nm to ∼150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ∼20 000 cm{sup 2} V{sup −1} s{sup −1} for ∼100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moiré pattern induced quasi-one-dimensional superlattice with a periodicity of ∼15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BN substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.

Metabolic engineering: the ultimate paradigm for continuous pharmaceutical manufacturing.

Science.gov (United States)

Yadav, Vikramaditya G; Stephanopoulos, Gregory

2014-07-01

Research and development (R&D) expenditures by pharmaceutical companies doubled over the past decade, yet candidate attrition rates and development times rose markedly during this period. Understandably, companies have begun downsizing their pipelines and diverting investments away from R&D in favor of manufacturing. It is estimated that transitioning to continuous manufacturing could enable companies to compete for a share in emerging markets. Accordingly, the model for continuous manufacturing that has emerged commences with the conversion of late-stage intermediates into the active pharmaceutical ingredient (API) in a series of continuous flow reactors, followed by continuous solid processing to form finished tablets. The use of flow reactions for API synthesis will certainly generate purer products at higher yields in shorter times compared to equivalent batch reactions. However, transitioning from batch to flow configuration simply alleviates transport limitations within the reaction milieu. As the catalogue of reactions used in flow syntheses is a subset of batch-based chemistries, molecules such as natural products will continue to evade drug prospectors. Also, it is uncertain whether flow synthesis can deliver improvements in the atom and energy economies of API production at the scales that would achieve the levels of revenue growth targeted by companies. Instead, it is argued that implementing metabolic engineering for the production of oxidized scaffolds as gateway molecules for flow-based addition of electrophiles is a more effective and scalable strategy for accessing natural product chemical space. This new paradigm for manufacturing, with metabolic engineering as its engine, would also permit rapid optimization of production variables and allow facile scale-up from gram to ton scale to meet material requirements for clinical trials, thus recasting manufacturing as a tool for discovery. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

International Nuclear Information System (INIS)

Gong, Q.; Noetzel, R.; Veldhoven, P.J. van; Eijkemans, T.J.; Wolter, J.H.

2004-01-01

We report on an effective way to continuously tune the emission wavelength of InAs quantum dots (QDs) grown on InP (100) by chemical-beam epitaxy. The InAs QD layer is embedded in a GaInAsP layer lattice matched to InP. With an ultrathin GaAs layer inserted between the InAs QD layer and the GaInAsP buffer, the peak wavelength from the InAs QDs can be continuously tuned from above 1.6 μm down to 1.5 μm at room temperature. The major role of the thin GaAs layer is to greatly suppress the As/P exchange during the deposition of InAs and subsequent growth interruption under arsenic flux, as well as to consume the segregated surface In layer floating on the GaInAsP buffer layer

Model-Based Evaluation Of System Scalability: Bandwidth Analysis For Smartphone-Based Biosensing Applications

DEFF Research Database (Denmark)

Patou, François; Madsen, Jan; Dimaki, Maria

2016-01-01

Scalability is a design principle often valued for the engineering of complex systems. Scalability is the ability of a system to change the current value of one of its specification parameters. Although targeted frameworks are available for the evaluation of scalability for specific digital systems...... re-engineering of 5 independent system modules, from the replacement of a wireless Bluetooth interface, to the revision of the ADC sample-and-hold operation could help increase system bandwidth....

Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111/Si(111

Directory of Open Access Journals (Sweden)

Abe Shunsuke

2010-01-01

Full Text Available Abstract Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111 thin films on Si(111 has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111/Si(111 is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001 proceeds.

Epitaxial growth of semiconducting β-FeSi2 and its application to light-emitting diodes

International Nuclear Information System (INIS)

Suemasu, T.; Takakura, K.; Li, Cheng; Ozawa, Y.; Kumagai, Y.; Hasegawa, F.

2004-01-01

In this paper, we review the detailed study of epitaxial growth of β-FeSi 2 films by reactive deposition epitaxy (RDE), multilayer technique and molecular beam epitaxy (MBE). The p- and n-type β-FeSi 2 was formed when it was grown under an Fe-rich and an Si-rich condition, respectively. The maximum electron and hole mobilities of the β-FeSi 2 epitaxial films reached 6900 and 13000 cm 2 /V·s for the n- and p-type β-FeSi 2 , respectively, at around 50 K. Room temperature (RT) 1.6 μm electroluminescence (EL) was realized by optimizing the growth conditions for p-Si/β-FeSi 2 particles/n-Si structures prepared by RDE for β-FeSi 2 and by MBE for Si

Dynamic Defrosting on Scalable Superhydrophobic Surfaces

International Nuclear Information System (INIS)

Murphy, Kevin R.; McClintic, William T.; Lester, Kevin C.; Collier, C. Patrick; Boreyko, Jonathan B.

2017-01-01

Recent studies have shown that frost can grow in a suspended Cassie state on nanostructured superhydrophobic surfaces. During defrosting, the melting sheet of Cassie frost spontaneously dewets into quasi-spherical slush droplets that are highly mobile. Promoting Cassie frost would therefore seem advantageous from a defrosting standpoint; however, nobody has systematically compared the efficiency of defrosting Cassie ice versus defrosting conventional surfaces. Here, we characterize the defrosting of an aluminum plate, one-half of which exhibits a superhydrophobic nanostructure while the other half is smooth and hydrophobic. For thick frost sheets (>1 mm), the superhydrophobic surface was able to dynamically shed the meltwater, even at very low tilt angles. In contrast, the hydrophobic surface was unable to shed any appreciable meltwater even at a 90° tilt angle. For thin frost layers (≲1 mm), not even the superhydrophobic surface could mobilize the meltwater. We attribute this to the large apparent contact angle of the meltwater, which for small amounts of frost serves to minimize coalescence events and prevent droplets from approaching the capillary length. Finally, we demonstrate a new mode of dynamic defrosting using an upside-down surface orientation, where the melting frost was able to uniformly detach from the superhydrophobic side and subsequently pull the frost from the hydrophobic side in a chain reaction. Treating surfaces to enable Cassie frost is therefore very desirable for enabling rapid and low-energy thermal defrosting, but only for frost sheets that are sufficiently thick.

Scalability of Sustainable Business Models in Hybrid Organizations

Directory of Open Access Journals (Sweden)

Adam Jabłoński

2016-02-01

Full Text Available The dynamics of change in modern business create new mechanisms for company management to determine their pursuit and the achievement of their high performance. This performance maintained over a long period of time becomes a source of ensuring business continuity by companies. An ontological being enabling the adoption of such assumptions is such a business model that has the ability to generate results in every possible market situation and, moreover, it has the features of permanent adaptability. A feature that describes the adaptability of the business model is its scalability. Being a factor ensuring more work and more efficient work with an increasing number of components, scalability can be applied to the concept of business models as the company’s ability to maintain similar or higher performance through it. Ensuring the company’s performance in the long term helps to build the so-called sustainable business model that often balances the objectives of stakeholders and shareholders, and that is created by the implemented principles of value-based management and corporate social responsibility. This perception of business paves the way for building hybrid organizations that integrate business activities with pro-social ones. The combination of an approach typical of hybrid organizations in designing and implementing sustainable business models pursuant to the scalability criterion seems interesting from the cognitive point of view. Today, hybrid organizations are great spaces for building effective and efficient mechanisms for dialogue between business and society. This requires the appropriate business model. The purpose of the paper is to present the conceptualization and operationalization of scalability of sustainable business models that determine the performance of a hybrid organization in the network environment. The paper presents the original concept of applying scalability in sustainable business models with detailed

Epitaxial growth of zinc on ferritic steel under high current density electroplating conditions

International Nuclear Information System (INIS)

Greul, Thomas; Comenda, Christian; Preis, Karl; Gerdenitsch, Johann; Sagl, Raffaela; Hassel, Achim Walter

2013-01-01

Highlights: •EBSD of electroplated Zn on Fe or steel was performed. •Zn grows epitaxially on electropolished ferritic steel following Burger's orientation relation. •Surface deformation of steel leads to multiple electroplated zinc grains with random orientation. •Zn grows epitaxially even on industrial surfaces with little surface deformation. •Multiple zinc grains on one steel grain can show identical orientation relations. -- Abstract: The dependence of the crystal orientation of electrodeposited zinc of the grain orientation on ferritic steel substrate at high current density deposition (400 mA cm −2 ) during a pulse-plating process was investigated by means of EBSD (electron backscatter diffraction) measurements. EBSD-mappings of surface and cross-sections were performed on samples with different surface preparations. Furthermore an industrial sample was investigated to compare lab-coated samples with the industrial process. The epitaxial growth of zinc is mainly dependent on the condition of the steel grains. Deformation of steel grains leads to random orientation while zinc grows epitaxially on non-deformed steel grains even on industrial surfaces

A novel scalable manufacturing process for the production of hydrogel-forming microneedle arrays.

Science.gov (United States)

Lutton, Rebecca E M; Larrañeta, Eneko; Kearney, Mary-Carmel; Boyd, Peter; Woolfson, A David; Donnelly, Ryan F

2015-10-15

A novel manufacturing process for fabricating microneedle arrays (MN) has been designed and evaluated. The prototype is able to successfully produce 14×14 MN arrays and is easily capable of scale-up, enabling the transition from laboratory to industry and subsequent commercialisation. The method requires the custom design of metal MN master templates to produce silicone MN moulds using an injection moulding process. The MN arrays produced using this novel method was compared with centrifugation, the traditional method of producing aqueous hydrogel-forming MN arrays. The results proved that there was negligible difference between either methods, with each producing MN arrays with comparable quality. Both types of MN arrays can be successfully inserted in a skin simulant. In both cases the insertion depth was approximately 60% of the needle length and the height reduction after insertion was in both cases approximately 3%. Copyright © 2015 Elsevier B.V. All rights reserved.

Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy

International Nuclear Information System (INIS)

Lee, J. H.; Ke, X.; Misra, R.; Schiffer, P.; Ihlefeld, J. F.; Mei, Z. G.; Liu, Z. K.; Xu, X. S.; Musfeldt, J. L.; Heeg, T.; Schlom, D. G.; Roeckerath, M.; Schubert, J.

2010-01-01

We have developed the means to grow BiMnO 3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO 3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003 deg. ). Optical absorption measurements reveal that BiMnO 3 has a direct band gap of 1.1±0.1 eV.

Integrated culture platform based on a human platelet lysate supplement for the isolation and scalable manufacturing of umbilical cord matrix-derived mesenchymal stem/stromal cells.

Science.gov (United States)

de Soure, António M; Fernandes-Platzgummer, Ana; Moreira, Francisco; Lilaia, Carla; Liu, Shi-Hwei; Ku, Chen-Peng; Huang, Yi-Feng; Milligan, William; Cabral, Joaquim M S; da Silva, Cláudia L

2017-05-01

Umbilical cord matrix (UCM)-derived mesenchymal stem/stromal cells (MSCs) are promising therapeutic candidates for regenerative medicine settings. UCM MSCs have advantages over adult cells as these can be obtained through a non-invasive harvesting procedure and display a higher proliferative capacity. However, the high cell doses required in the clinical setting make large-scale manufacturing of UCM MSCs mandatory. A commercially available human platelet lysate-based culture supplement (UltraGRO TM , AventaCell BioMedical) (5%(v/v)) was tested to effectively isolate UCM MSCs and to expand these cells under (1) static conditions, using planar culture systems and (2) stirred culture using plastic microcarriers in a spinner flask. The MSC-like cells were isolated from UCM explant cultures after 11 ± 2 days. After five passages in static culture, UCM MSCs retained their immunophenotype and multilineage differentiation potential. The UCM MSCs cultured under static conditions using UltraGRO TM -supplemented medium expanded more rapidly compared with UCM MSCs expanded using a previously established protocol. Importantly, UCM MSCs were successfully expanded under dynamic conditions on plastic microcarriers using UltraGRO TM -supplemented medium in spinner flasks. Upon an initial 54% cell adhesion to the beads, UCM MSCs expanded by >13-fold after 5-6 days, maintaining their immunophenotype and multilineage differentiation ability. The present paper reports the establishment of an easily scalable integrated culture platform based on a human platelet lysate supplement for the effective isolation and expansion of UCM MSCs in a xenogeneic-free microcarrier-based system. This platform represents an important advance in obtaining safer and clinically meaningful MSC numbers for clinical translation. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

Integration in design and manufacturing of polymer smart devices

NARCIS (Netherlands)

Bolt, P.J.; Zwart, R.M. de; Tacken, R.A.; Rendering, H.

2009-01-01

Integration of functions in single components is pursued in order to manufacture smaller and smarter polymer micro devices at less cost, through e.g. less assembly steps. It requires integration on both product and production side. This paper addresses the use of molded interconnect device (MID)

Dimensional metrology for process and part quality control in micro manufacturing

DEFF Research Database (Denmark)

Hansen, Hans Nørgaard; Tosello, Guido; Gasparin, Stefania

2011-01-01

dimensions are scaled down and geometrical complexity of objects is increased, the available measurement technologies appear not sufficient. New solutions for measuring principles and instrumentation, tolerancing rules and procedures as well as traceability and calibration are necessary if micro......Micro manufacturing has gained interest over the last decade as the demand for micro mechanical components has increased. The need for dimensional metrology at micro scale is evident both in terms of quality assurance of components and products and in terms of process control. As critical...... manufacturing is to develop into industrial manufacturing solutions. In this paper the application of dimensional precision metrology to both component and process quality control will be demonstrated. The parts investigated are micro injection moulded polymer parts, typical for the field of micro manufacturing....

Epitaxy, thin films and superlattices

International Nuclear Information System (INIS)

Jagd Christensen, Morten

1997-05-01

This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

Epitaxy, thin films and superlattices

Energy Technology Data Exchange (ETDEWEB)

Jagd Christensen, Morten

1997-05-01

This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

Fast & scalable pattern transfer via block copolymer nanolithography

DEFF Research Database (Denmark)

Li, Tao; Wang, Zhongli; Schulte, Lars

2015-01-01

A fully scalable and efficient pattern transfer process based on block copolymer (BCP) self-assembling directly on various substrates is demonstrated. PS-rich and PDMS-rich poly(styrene-b-dimethylsiloxane) (PS-b-PDMS) copolymers are used to give monolayer sphere morphology after spin-casting of s......A fully scalable and efficient pattern transfer process based on block copolymer (BCP) self-assembling directly on various substrates is demonstrated. PS-rich and PDMS-rich poly(styrene-b-dimethylsiloxane) (PS-b-PDMS) copolymers are used to give monolayer sphere morphology after spin...... on long range lateral order, including fabrication of substrates for catalysis, solar cells, sensors, ultrafiltration membranes and templating of semiconductors or metals....

Scalable Motion Estimation Processor Core for Multimedia System-on-Chip Applications

Science.gov (United States)

Lai, Yeong-Kang; Hsieh, Tian-En; Chen, Lien-Fei

2007-04-01

In this paper, we describe a high-throughput and scalable motion estimation processor architecture for multimedia system-on-chip applications. The number of processing elements (PEs) is scalable according to the variable algorithm parameters and the performance required for different applications. Using the PE rings efficiently and an intelligent memory-interleaving organization, the efficiency of the architecture can be increased. Moreover, using efficient on-chip memories and a data management technique can effectively decrease the power consumption and memory bandwidth. Techniques for reducing the number of interconnections and external memory accesses are also presented. Our results demonstrate that the proposed scalable PE-ringed architecture is a flexible and high-performance processor core in multimedia system-on-chip applications.

Transfer-free electrical insulation of epitaxial graphene from its metal substrate.

Science.gov (United States)

Lizzit, Silvano; Larciprete, Rosanna; Lacovig, Paolo; Dalmiglio, Matteo; Orlando, Fabrizio; Baraldi, Alessandro; Gammelgaard, Lauge; Barreto, Lucas; Bianchi, Marco; Perkins, Edward; Hofmann, Philip

2012-09-12

High-quality, large-area epitaxial graphene can be grown on metal surfaces, but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by a stepwise intercalation of silicon and oxygen, and the eventual formation of a SiO(2) layer between the graphene and the metal. We follow the reaction steps by X-ray photoemission spectroscopy and demonstrate the electrical insulation using a nanoscale multipoint probe technique.

Transfer-Free Electrical Insulation of Epitaxial Graphene from its Metal Substrate

DEFF Research Database (Denmark)

Lizzit, Silvano; Larciprete, Rosanna; Lacovig, Paolo

2012-01-01

High-quality, large-area epitaxial graphene can be grown on metal surfaces, but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by a stepwise intercalation of silicon and oxygen......, and the eventual formation of a SiO2 layer between the graphene and the metal. We follow the reaction steps by X-ray photoemission spectroscopy and demonstrate the electrical insulation using a nanoscale multipoint probe technique....

Pseudomorphic growth of organic semiconductor thin films driven by incommensurate epitaxy

International Nuclear Information System (INIS)

Sassella, A.; Campione, M.; Raimondo, L.; Borghesi, A.; Bussetti, G.; Cirilli, S.; Violante, A.; Goletti, C.; Chiaradia, P.

2009-01-01

A stable pseudomorphic phase of α-quaterthiophene, a well known organic semiconductor, is obtained by growing films with organic molecular beam epitaxy (OMBE) on a single crystal of another organic semiconductor, namely, tetracene. The structural characteristics of the new phase are investigated by monitoring in situ the OMBE process by reflectance anisotropy spectroscopy; thus assessing that incommensurate epitaxy is in this case, the driving force for tuning the molecular packing in organic molecular films and in turn, their solid state properties

Scalable, ambient atmosphere roll-to-roll manufacture of encapsulated large area, flexible organic tandem solar cell modules

DEFF Research Database (Denmark)

Andersen, Thomas Rieks; Dam, Henrik Friis; Hösel, Markus

2014-01-01

the manufacture of completely functional devices in exceptionally high yields. Critical to the ink and process development is a carefully chosen technology transfer to industry method where first a roll coater is employed enabling contactless stack build up, followed by a small roll-to-roll coater fitted to an X...

Accounting Fundamentals and the Variation of Stock Price: Factoring in the Investment Scalability

Directory of Open Access Journals (Sweden)

Sumiyana Sumiyana

2010-05-01

Full Text Available This study develops a new return model with respect to accounting fundamentals. The new return model is based on Chen and Zhang (2007. This study takes into account theinvestment scalability information. Specifically, this study splitsthe scale of firm’s operations into short-run and long-runinvestment scalabilities. We document that five accounting fun-damentals explain the variation of annual stock return. Thefactors, comprised book value, earnings yield, short-run andlong-run investment scalabilities, and growth opportunities, co associate positively with stock price. The remaining factor,which is the pure interest rate, is negatively related to annualstock return. This study finds that inducing short-run and long-run investment scalabilities into the model could improve the degree of association. In other words, they have value rel-evance. Finally, this study suggests that basic trading strategieswill improve if investors revert to the accounting fundamentals. Keywords: accounting fundamentals; book value; earnings yield; growth opportuni­ties; short­run and long­run investment scalabilities; trading strategy;value relevance

Bromine doping of CdTe and CdMnTe epitaxial layers grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Waag, A. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Scholl, S. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Schierstedt, K. von (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Hommel, D. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstoff-Forschung, Stuttgart (Germany))

1993-03-01

We report on the n-type doping of CdTe and CdMnTe with bormine as a novel dopant material. /the thin films were grown by molecular beam epitaxy. ZnBr[sub 2] was used as a source material for the n-type doping. Free carrier concentrations at room temperature of up to 2.8x10[sup 18] cm[sup -3] could be readily obtained for both CdTe as well as CdMnTe thin films with Mn concentrations below 10%. This is to our knowledge the highest value ever obtained for the dilute magnetic semiconductor CdMnTe. For ZnBr[sub 2] source temperatures up to 60 C - corresponding to a free carrier concentration of (2-3)x10[sup 18] cm[sup -3] - the free carrier concentration of the epitaxial film increases with ZnBr[sub 2] source temperature. For higher ZnBr[sub 2] source temperatures compensation becomes dominant, which is indicated by a steep decrease of the free carrier concentration with increasing ZnBr[sub 2] source temperature. In addition the carrier mobility decreases drastically for such high dopant fluxes. A model of bromine incorporation is proposed. (orig.)

Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

Directory of Open Access Journals (Sweden)

Hongling Wei

2017-11-01

Full Text Available Ga2O3 with a wide bandgap of ∼ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE at different substrate temperatures. The influences of substrate temperature on structural and optical properties have been systematically investigated by means of X-ray diffraction, Transmission electron microscope and UV-vis absorption spectra. High quality cubic structure and [111] oriented CuGa2O4 film can be obtained at substrate temperature of 750 °C. It’s also demonstrated that the CuGa2O4 film has a bandgap of ∼ 4.4 eV and a best crystal quality at 750 °C, suggesting that CuGa2O4 film is a promising candidate for applications in ultraviolet optoelectronic devices.

Scalable and balanced dynamic hybrid data assimilation

Science.gov (United States)

Kauranne, Tuomo; Amour, Idrissa; Gunia, Martin; Kallio, Kari; Lepistö, Ahti; Koponen, Sampsa

2017-04-01

Scalability of complex weather forecasting suites is dependent on the technical tools available for implementing highly parallel computational kernels, but to an equally large extent also on the dependence patterns between various components of the suite, such as observation processing, data assimilation and the forecast model. Scalability is a particular challenge for 4D variational assimilation methods that necessarily couple the forecast model into the assimilation process and subject this combination to an inherently serial quasi-Newton minimization process. Ensemble based assimilation methods are naturally more parallel, but large models force ensemble sizes to be small and that results in poor assimilation accuracy, somewhat akin to shooting with a shotgun in a million-dimensional space. The Variational Ensemble Kalman Filter (VEnKF) is an ensemble method that can attain the accuracy of 4D variational data assimilation with a small ensemble size. It achieves this by processing a Gaussian approximation of the current error covariance distribution, instead of a set of ensemble members, analogously to the Extended Kalman Filter EKF. Ensemble members are re-sampled every time a new set of observations is processed from a new approximation of that Gaussian distribution which makes VEnKF a dynamic assimilation method. After this a smoothing step is applied that turns VEnKF into a dynamic Variational Ensemble Kalman Smoother VEnKS. In this smoothing step, the same process is iterated with frequent re-sampling of the ensemble but now using past iterations as surrogate observations until the end result is a smooth and balanced model trajectory. In principle, VEnKF could suffer from similar scalability issues as 4D-Var. However, this can be avoided by isolating the forecast model completely from the minimization process by implementing the latter as a wrapper code whose only link to the model is calling for many parallel and totally independent model runs, all of them

Quasi van der Waals epitaxy of copper thin film on single-crystal graphene monolayer buffer

Science.gov (United States)

Lu, Zonghuan; Sun, Xin; Washington, Morris A.; Lu, Toh-Ming

2018-03-01

Quasi van der Waals epitaxial growth of face-centered cubic Cu (~100 nm) thin films on single-crystal monolayer graphene is demonstrated using thermal evaporation at an elevated substrate temperature of 250 °C. The single-crystal graphene was transferred to amorphous (glass) and crystalline (quartz) SiO2 substrates for epitaxy study. Raman analysis showed that the thermal evaporation method had minimal damage to the graphene lattice during the Cu deposition. X-ray diffraction and electron backscatter diffraction analyses revealed that both Cu films are single-crystal with (1 1 1) out-of-plane orientation and in-plane Σ3 twin domains of 60° rotation. The crystallinity of the SiO2 substrates has a negligible effect on the Cu crystal orientation during the epitaxial growth, implying the strong screening effect of graphene. We also demonstrate the epitaxial growth of polycrystalline Cu on a commercial polycrystalline monolayer graphene consisting of two orientation domains offset 30° to each other. It confirms that the crystal orientation of the epitaxial Cu film follows that of graphene, i.e. the Cu film consists of two orientation domains offset 30° to each other when deposited on polycrystalline graphene. Finally, on the contrary to the report in the literature, we show that the direct current and radio frequency flip sputtering method causes significant damage to the graphene lattice during the Cu deposition process, and therefore neither is a suitable method for Cu epitaxial growth on graphene.

Epitaxial growth of a methoxy-functionalized quaterphenylene on alkali halide surfaces

Energy Technology Data Exchange (ETDEWEB)

Balzer, F., E-mail: fbalzer@mci.sdu.dk [University of Southern Denmark, Mads Clausen Institute, Alsion 2, DK-6400 Sønderborg (Denmark); Sun, R. [University of Southern Denmark, Mads Clausen Institute, Alsion 2, DK-6400 Sønderborg (Denmark); Parisi, J. [University of Oldenburg, Energy and Semiconductor Research Laboratory, Institute of Physics, Carl-von-Ossietzky-Str. 9-11, D-26111 Oldenburg (Germany); Rubahn, H.-G. [University of Southern Denmark, Mads Clausen Institute, Alsion 2, DK-6400 Sønderborg (Denmark); Lützen, A. [University of Bonn, Kekulé Institute of Organic Chemistry and Biochemistry, Gerhard-Domagk-Str. 1, D-53121 Bonn (Germany); Schiek, M. [University of Oldenburg, Energy and Semiconductor Research Laboratory, Institute of Physics, Carl-von-Ossietzky-Str. 9-11, D-26111 Oldenburg (Germany)

2015-12-31

The epitaxial growth of the methoxy functionalized para-quaterphenylene (MOP4) on the (001) faces of the alkali halides NaCl and KCl and on glass is investigated by a combination of low energy electron diffraction (LEED), polarized light microscopy (PLM), atomic force microscopy (AFM), and X-ray diffraction (XRD). Both domains from upright molecules as well as fiber-like crystallites from lying molecules form. Neither a wetting layer from lying molecules nor widespread epitaxial fiber growth on the substrates is detected. Our results focus on the upright standing molecules, which condense into a thin film phase with an enlarged layer spacing compared to the bulk phase. - Highlights: • Growth of a methoxy-functionalized para-phenylene on dielectric surfaces is investigated. • Low-energy electron diffraction and X-ray diffraction techniques are employed for structural characterization. • Epitaxial growth of upright molecules only is documented. • Polarized optical microscopy together with atomic force microscopy complements the findings.

Epitaxial growth of a methoxy-functionalized quaterphenylene on alkali halide surfaces

International Nuclear Information System (INIS)

Balzer, F.; Sun, R.; Parisi, J.; Rubahn, H.-G.; Lützen, A.; Schiek, M.

2015-01-01

The epitaxial growth of the methoxy functionalized para-quaterphenylene (MOP4) on the (001) faces of the alkali halides NaCl and KCl and on glass is investigated by a combination of low energy electron diffraction (LEED), polarized light microscopy (PLM), atomic force microscopy (AFM), and X-ray diffraction (XRD). Both domains from upright molecules as well as fiber-like crystallites from lying molecules form. Neither a wetting layer from lying molecules nor widespread epitaxial fiber growth on the substrates is detected. Our results focus on the upright standing molecules, which condense into a thin film phase with an enlarged layer spacing compared to the bulk phase. - Highlights: • Growth of a methoxy-functionalized para-phenylene on dielectric surfaces is investigated. • Low-energy electron diffraction and X-ray diffraction techniques are employed for structural characterization. • Epitaxial growth of upright molecules only is documented. • Polarized optical microscopy together with atomic force microscopy complements the findings.

Quantum Nanostructures by Droplet Epitaxy

OpenAIRE

Somsak Panyakeow

2009-01-01

Droplet epitaxy is an alternative growth technique for several quantum nanostructures. Indium droplets are distributed randomly on GaAs substrates at low temperatures (120-350'C). Under background pressure of group V elements, Arsenic and Phosphorous, InAs and InP nanostructures are created. Quantum rings with isotropic shape are obtained at low temperature range. When the growth thickness is increased, quantum rings are transformed to quantum dot rings. At high temperature range, anisotropic...

Charge collection properties of heavily irradiated epitaxial silicon detectors

International Nuclear Information System (INIS)

Kramberger, G.; Cindro, V.; Dolenc, I.; Fretwurst, E.; Lindstroem, G.; Mandic, I.; Mikuz, M.; Zavrtanik, M.

2005-01-01

Detectors processed on epitaxial silicon seem to be a viable solution for the extreme radiation levels in the innermost layers of tracking detectors at upgraded LHC (SLHC). A set of epitaxial pad detectors of 50 and 75μm thicknesses (ρ=50Ωcm) was irradiated with 24GeV/c protons and reactor neutrons up to equivalent fluences of 10 16 cm -2 . Charge collection for minimum ionizing electrons from a 90 Sr source was measured using a charge sensitive preamplifier and a 25ns shaping circuit. The dependence of collected charge on annealing time and operation temperature was studied. Results were used to predict the performance of fine pitch pixel detectors proposed for SLHC

Charge collection properties of heavily irradiated epitaxial silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Kramberger, G. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia)]. E-mail: Gregor.Kramberger@ijs.si; Cindro, V. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Dolenc, I. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Fretwurst, E. [University of Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, D-22761 Hamburg (Germany); Lindstroem, G. [University of Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, D-22761 Hamburg (Germany); Mandic, I. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Mikuz, M. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Zavrtanik, M. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia)

2005-12-01

Detectors processed on epitaxial silicon seem to be a viable solution for the extreme radiation levels in the innermost layers of tracking detectors at upgraded LHC (SLHC). A set of epitaxial pad detectors of 50 and 75{mu}m thicknesses ({rho}=50{omega}cm) was irradiated with 24GeV/c protons and reactor neutrons up to equivalent fluences of 10{sup 16}cm{sup -2}. Charge collection for minimum ionizing electrons from a {sup 90}Sr source was measured using a charge sensitive preamplifier and a 25ns shaping circuit. The dependence of collected charge on annealing time and operation temperature was studied. Results were used to predict the performance of fine pitch pixel detectors proposed for SLHC.

Epitaxial GaN around ZnO nanopillars

Energy Technology Data Exchange (ETDEWEB)

Fikry, Mohamed; Scholz, Ferdinand [Institut fuer Optoelektronik, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany); Madel, Manfred; Tischer, Ingo; Thonke, Klaus [Institut fuer Quantenmaterie, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany)

2011-07-01

We report on an investigation of the epitaxial quality of GaN layers overgrown coaxially around ZnO nanopillars. In a first step, regularly arranged ZnO nanopillars were grown using pre-patterning by e-beam lithography or self-organized hexagonal polystyrene sphere masks. Alternatively, ZnO pillars were also successfully grown on top of GaN pyramids. In a second step, GaN layers were grown around the ZnO pillars by Metal Organic Vapor Phase Epitaxy. At growth temperatures above 800 C, the ZnO pillars are dissolved by the hydrogen carrier gas leaving hollow GaN nanotubes. Characterization involved photoluminescence (PL), scanning electron microscopy and cathodoluminescence. The fair quality of the deposited GaN layers is confirmed by a sharp low temperature PL peak at 3.48 eV attributed to the donor bound exciton emission. Further peaks at 3.42 eV and 3.29 eV show the possible existence of basal plane and prismatic stacking faults.

Epitaxial growth of thin single-crystals and their quality study by Rutherford scattering in channeling conditions

International Nuclear Information System (INIS)

Kirsch, Robert.

1975-01-01

Some aspects of thin crystalline layers are reminded: vacuum deposition, epitaxial growth, annealing and interdiffusion ion channeling and scattering of 1-2MeV helium ions are used to study the crystalline quality, the annealing effects and in some cases the interdiffusion in epitaxial multilayers of silver, copper gold and nickel. Thin single-crystals of gold and nickel oriented (III) plan parallel to the surface were obtained by successive epitaxial growth from muscovite mica clivages. The mounting techniques of single crystalline, self-supporting, 300 to 1200 Angstroems thick, gold and nickel targets of 3mm diameter are described. The gold single-crystals have dislocation densities of 10 8 cm -2 and the various epitaxial layers are obtained without twinning [fr

An agent-based peer-to-peer architecture for semantic discovery of manufacturing services across virtual enterprises

Science.gov (United States)

Zhang, Wenyu; Zhang, Shuai; Cai, Ming; Jian, Wu

2015-04-01

With the development of virtual enterprise (VE) paradigm, the usage of serviceoriented architecture (SOA) is increasingly being considered for facilitating the integration and utilisation of distributed manufacturing resources. However, due to the heterogeneous nature among VEs, the dynamic nature of a VE and the autonomous nature of each VE member, the lack of both sophisticated coordination mechanism in the popular centralised infrastructure and semantic expressivity in the existing SOA standards make the current centralised, syntactic service discovery method undesirable. This motivates the proposed agent-based peer-to-peer (P2P) architecture for semantic discovery of manufacturing services across VEs. Multi-agent technology provides autonomous and flexible problemsolving capabilities in dynamic and adaptive VE environments. Peer-to-peer overlay provides highly scalable coupling across decentralised VEs, each of which exhibiting as a peer composed of multiple agents dealing with manufacturing services. The proposed architecture utilises a novel, efficient, two-stage search strategy - semantic peer discovery and semantic service discovery - to handle the complex searches of manufacturing services across VEs through fast peer filtering. The operation and experimental evaluation of the prototype system are presented to validate the implementation of the proposed approach.

Epitaxial growth of silicon and germanium on (100-oriented crystalline substrates by RF PECVD at 175 °C

Directory of Open Access Journals (Sweden)

Mauguin O.

2012-11-01

Full Text Available We report on the epitaxial growth of crystalline Si and Ge thin films by standard radio frequency plasma enhanced chemical vapor deposition at 175 °C on (100-oriented silicon substrates. We also demonstrate the epitaxial growth of silicon films on epitaxially grown germanium layers so that multilayer samples sustaining epitaxy could be produced. We used spectroscopic ellipsometry, Raman spectroscopy, transmission electron microscopy and X-ray diffraction to characterize the structure of the films (amorphous, crystalline. These techniques were found to provide consistent results and provided information on the crystallinity and constraints in such lattice-mismatched structures. These results open the way to multiple quantum-well structures, which have been so far limited to few techniques such as Molecular Beam Epitaxy or MetalOrganic Chemical Vapor Deposition.

Epitaxial Integration of Nanowires in Microsystems by Local Micrometer Scale Vapor Phase Epitaxy

DEFF Research Database (Denmark)

Mølhave, Kristian; Wacaser, Brent A.; Petersen, Dirch Hjorth

2008-01-01

deposition (CVD) or metal organic VPE (MOVPE). However, VPE of semiconducting nanowires is not compatible with several microfabrication processes due to the high synthesis temperatures and issues such as cross-contamination interfering with the intended microsystem or the VPE process. By selectively heating...... a small microfabricated heater, growth of nanowires can be achieved locally without heating the entire microsystem, thereby reducing the compatibility problems. The first demonstration of epitaxial growth of silicon nanowires by this method is presented and shows that the microsystem can be used for rapid...

Neutron slowing-down time in finite water systems

International Nuclear Information System (INIS)

Hirschberg, S.

1981-11-01

The influence of the size of a moderator system on the neutron slowing-down time has been investigated. The experimental part of the study was performed on six cubes of water with side lengths from 8 to 30 cm. Neutrons generated in pulses of about 1 ns width were slowed down from 14 MeV to 1.457 eV. The detection method used was based on registration of gamma radiation from the main capture resonance of indium. The most probable slowing-down times were found to be 778 +- 23 ns and 898 +- 25 ns for the smallest and for the largest cubes, respectively. The corresponding mean slowing-down times were 1205 +- 42 ns and 1311 +- 42 ns. In a separate measurement series the space dependence of the slowing-down time close to the source was studied. These experiments were supplemented by a theoretical calculation which gave an indication of the space dependence of the slowingdown time in finite systems. The experimental results were compared to the slowing-down times obtained from various theoretical approaches and from Monte Carlo calculations. All the methods show a decrease of the slowing-down time with decreasing size of the moderator. This effect was least pronounced in the experimental results, which can be explained by the fact the measurements are spatially dependent. The agreement between the Monte Carlo results and those obtained using the diffusion approximation or the age-diffusion theory is surprisingly good, especially for large systems. The P1 approximation, on the other hand, leads to an overestimation of the effect of the finite size on the slowing-down time. (author)

On the scalability of uncoordinated multiple access for the Internet of Things

KAUST Repository

Chisci, Giovanni

2017-11-16

The Internet of things (IoT) will entail massive number of wireless connections with sporadic traffic patterns. To support the IoT traffic, several technologies are evolving to support low power wide area (LPWA) wireless communications. However, LPWA networks rely on variations of uncoordinated spectrum access, either for data transmissions or scheduling requests, thus imposing a scalability problem to the IoT. This paper presents a novel spatiotemporal model to study the scalability of the ALOHA medium access. In particular, the developed mathematical model relies on stochastic geometry and queueing theory to account for spatial and temporal attributes of the IoT. To this end, the scalability of the ALOHA is characterized by the percentile of IoT devices that can be served while keeping their queues stable. The results highlight the scalability problem of ALOHA and quantify the extend to which ALOHA can support in terms of number of devices, traffic requirement, and transmission rate.

In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy

Science.gov (United States)

Lee, Jonghoon; Varshney, Vikas; Park, Jeongho; Farmer, Barry L.; Roy, Ajit K.

2016-05-01

Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon molecular beam epitaxy (CMBE) techniques using solid carbon sublimation have reported relatively poor quality of the graphene. In this article, the CMBE growth of graphene on the h-BN substrate is numerically studied in order to identify the effect of the carbon source on the quality of the graphene film. The carbon molecular beam generated by the sublimation of solid carbon source materials such as graphite and glassy carbon is mostly composed of atomic carbon, carbon dimers and carbon trimers. Therefore, the graphene film growth becomes a complex process involving various deposition characteristics of a multitude of carbon entities. Based on the study of surface adsorption and film growth characteristics of these three major carbon entities comprising graphite vapour, we report that carbon trimers convey strong traits of vdW epitaxy prone to high quality graphene growth, while atomic carbon deposition is a surface-reaction limited process accompanied by strong chemisorption. The vdW epitaxial behaviour of carbon trimers is found to be substantial enough to nucleate and develop into graphene like planar films within a nanosecond of high flux growth simulation, while reactive atomic carbons tend to impair the structural integrity of the crystalline h-BN substrate upon deposition to form an amorphous interface between the substrate and the growing carbon film. The content of reactive atomic carbons in the molecular beam is suspected to be the primary cause of low quality graphene reported in the literature. A possible optimization of the molecular beam composition towards the synthesis of better quality graphene films is suggested.Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon

Manufacturing Process Simulation of Large-Scale Cryotanks

Science.gov (United States)

Babai, Majid; Phillips, Steven; Griffin, Brian

2003-01-01

NASA's Space Launch Initiative (SLI) is an effort to research and develop the technologies needed to build a second-generation reusable launch vehicle. It is required that this new launch vehicle be 100 times safer and 10 times cheaper to operate than current launch vehicles. Part of the SLI includes the development of reusable composite and metallic cryotanks. The size of these reusable tanks is far greater than anything ever developed and exceeds the design limits of current manufacturing tools. Several design and manufacturing approaches have been formulated, but many factors must be weighed during the selection process. Among these factors are tooling reachability, cycle times, feasibility, and facility impacts. The manufacturing process simulation capabilities available at NASA.s Marshall Space Flight Center have played a key role in down selecting between the various manufacturing approaches. By creating 3-D manufacturing process simulations, the varying approaches can be analyzed in a virtual world before any hardware or infrastructure is built. This analysis can detect and eliminate costly flaws in the various manufacturing approaches. The simulations check for collisions between devices, verify that design limits on joints are not exceeded, and provide cycle times which aide in the development of an optimized process flow. In addition, new ideas and concerns are often raised after seeing the visual representation of a manufacturing process flow. The output of the manufacturing process simulations allows for cost and safety comparisons to be performed between the various manufacturing approaches. This output helps determine which manufacturing process options reach the safety and cost goals of the SLI. As part of the SLI, The Boeing Company was awarded a basic period contract to research and propose options for both a metallic and a composite cryotank. Boeing then entered into a task agreement with the Marshall Space Flight Center to provide manufacturing

Dental development in Down syndrome and healthy children: a comparative study using the Demirjian method.

Science.gov (United States)

van der Linden, M S; Vucic, S; van Marrewijk, D J F; Ongkosuwito, E M

2017-05-01

In children with Down syndrome, the timing of dental eruption is important for orthodontics treatment planning. Aim of this study was to determine whether tooth eruption and development of the dentition in children with Down syndrome are impaired. Dental development was scored on orthopantomograms (OPTs) of 95 children with Down syndrome. The dental age was determined at the left mandibular side according to the Demirjian method and by converting the assigned scores to the dental maturity score. Dental development scores of control children and DS children were compared with a mixed model linear regression analysis. The model showed statistically significant changes relating to increasing age (Pchildren and the control group after using the Nyström imputation (with and without hypodontia). The findings showed that dental development in DS children is similar to the development of control children and that a relationship exists between hypodontia and dental development. The clinically observed late eruption is probably not due to late dental development but due to the other processes that take place during eruption, such as the possible impaired processes at the apical side and the occlusal side of an erupting element. © 2017 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Characterization of 150 $\\mu$m thick epitaxial silicon detectors from different producers after proton irradiation

CERN Document Server

Hoedlmoser, H; Haerkoenen, J; Kronberger, M; Trummer, J; Rodeghiero, P

2007-01-01

Epitaxial (EPI) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of 150 mm thick EPI silicon diodes irradiated with 24GeV=c protons up to a fluence of 3 1015 p=cm2 has been performed by means of Charge Collection Efficiency (CCE) measurements, investigations with the Transient Current Technique (TCT) and standard CV=IV characterizations. The aim of the work was to investigate the impact of radiation damage as well as the influence of the wafer processing on the material performance by comparing diodes from different manufacturers. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. While the generation of leakage current due to irradiation is similar in all investigated series of detectors, a difference in the effective doping concentration can be observed after irradiation. In the CCE measurements an anomalous drop in performance was found even for diodes exposed to ...

Continuity-Aware Scheduling Algorithm for Scalable Video Streaming

Directory of Open Access Journals (Sweden)

Atinat Palawan

2016-05-01

Full Text Available The consumer demand for retrieving and delivering visual content through consumer electronic devices has increased rapidly in recent years. The quality of video in packet networks is susceptible to certain traffic characteristics: average bandwidth availability, loss, delay and delay variation (jitter. This paper presents a scheduling algorithm that modifies the stream of scalable video to combat jitter. The algorithm provides unequal look-ahead by safeguarding the base layer (without the need for overhead of the scalable video. The results of the experiments show that our scheduling algorithm reduces the number of frames with a violated deadline and significantly improves the continuity of the video stream without compromising the average Y Peek Signal-to-Noise Ratio (PSNR.

From Lab to Fab: Developing a Nanoscale Delivery Tool for Scalable Nanomanufacturing

Science.gov (United States)

Safi, Asmahan A.

The emergence of nanomaterials with unique properties at the nanoscale over the past two decades carries a capacity to impact society and transform or create new industries ranging from nanoelectronics to nanomedicine. However, a gap in nanomanufacturing technologies has prevented the translation of nanomaterial into real-world commercialized products. Bridging this gap requires a paradigm shift in methods for fabricating structured devices with a nanoscale resolution in a repeatable fashion. This thesis explores the new paradigms for fabricating nanoscale structures devices and systems for high throughput high registration applications. We present a robust and scalable nanoscale delivery platform, the Nanofountain Probe (NFP), for parallel direct-write of functional materials. The design and microfabrication of NFP is presented. The new generation addresses the challenges of throughput, resolution and ink replenishment characterizing tip-based nanomanufacturing. To achieve these goals, optimized probe geometry is integrated to the process along with channel sealing and cantilever bending. The capabilities of the newly fabricated probes are demonstrated through two type of delivery: protein nanopatterning and single cell nanoinjection. The broad applications of the NFP for single cell delivery are investigated. An external microfluidic packaging is developed to enable delivery in liquid environment. The system is integrated to a combined atomic force microscope and inverted fluorescence microscope. Intracellular delivery is demonstrated by injecting a fluorescent dextran into Hela cells in vitro while monitoring the injection forces. Such developments enable in vitro cellular delivery for single cell studies and high throughput gene expression. The nanomanufacturing capabilities of NFPs are explored. Nanofabrication of carbon nanotube-based electronics presents all the manufacturing challenges characterizing of assembling nanomaterials precisely onto devices. The

Scalable Partitioning Algorithms for FPGAs With Heterogeneous Resources

National Research Council Canada - National Science Library

Selvakkumaran, Navaratnasothie; Ranjan, Abhishek; Raje, Salil; Karypis, George

2004-01-01

As FPGA densities increase, partitioning-based FPGA placement approaches are becoming increasingly important as they can be used to provide high-quality and computationally scalable placement solutions...

Scalable domain decomposition solvers for stochastic PDEs in high performance computing

International Nuclear Information System (INIS)

Desai, Ajit; Pettit, Chris; Poirel, Dominique; Sarkar, Abhijit

2017-01-01

Stochastic spectral finite element models of practical engineering systems may involve solutions of linear systems or linearized systems for non-linear problems with billions of unknowns. For stochastic modeling, it is therefore essential to design robust, parallel and scalable algorithms that can efficiently utilize high-performance computing to tackle such large-scale systems. Domain decomposition based iterative solvers can handle such systems. And though these algorithms exhibit excellent scalabilities, significant algorithmic and implementational challenges exist to extend them to solve extreme-scale stochastic systems using emerging computing platforms. Intrusive polynomial chaos expansion based domain decomposition algorithms are extended here to concurrently handle high resolution in both spatial and stochastic domains using an in-house implementation. Sparse iterative solvers with efficient preconditioners are employed to solve the resulting global and subdomain level local systems through multi-level iterative solvers. We also use parallel sparse matrix–vector operations to reduce the floating-point operations and memory requirements. Numerical and parallel scalabilities of these algorithms are presented for the diffusion equation having spatially varying diffusion coefficient modeled by a non-Gaussian stochastic process. Scalability of the solvers with respect to the number of random variables is also investigated.

Scalable Video Coding with Interlayer Signal Decorrelation Techniques

Directory of Open Access Journals (Sweden)

Yang Wenxian

2007-01-01

Full Text Available Scalability is one of the essential requirements in the compression of visual data for present-day multimedia communications and storage. The basic building block for providing the spatial scalability in the scalable video coding (SVC standard is the well-known Laplacian pyramid (LP. An LP achieves the multiscale representation of the video as a base-layer signal at lower resolution together with several enhancement-layer signals at successive higher resolutions. In this paper, we propose to improve the coding performance of the enhancement layers through efficient interlayer decorrelation techniques. We first show that, with nonbiorthogonal upsampling and downsampling filters, the base layer and the enhancement layers are correlated. We investigate two structures to reduce this correlation. The first structure updates the base-layer signal by subtracting from it the low-frequency component of the enhancement layer signal. The second structure modifies the prediction in order that the low-frequency component in the new enhancement layer is diminished. The second structure is integrated in the JSVM 4.0 codec with suitable modifications in the prediction modes. Experimental results with some standard test sequences demonstrate coding gains up to 1 dB for I pictures and up to 0.7 dB for both I and P pictures.

Scalable Atomistic Simulation Algorithms for Materials Research

Directory of Open Access Journals (Sweden)

Aiichiro Nakano

2002-01-01

Full Text Available A suite of scalable atomistic simulation programs has been developed for materials research based on space-time multiresolution algorithms. Design and analysis of parallel algorithms are presented for molecular dynamics (MD simulations and quantum-mechanical (QM calculations based on the density functional theory. Performance tests have been carried out on 1,088-processor Cray T3E and 1,280-processor IBM SP3 computers. The linear-scaling algorithms have enabled 6.44-billion-atom MD and 111,000-atom QM calculations on 1,024 SP3 processors with parallel efficiency well over 90%. production-quality programs also feature wavelet-based computational-space decomposition for adaptive load balancing, spacefilling-curve-based adaptive data compression with user-defined error bound for scalable I/O, and octree-based fast visibility culling for immersive and interactive visualization of massive simulation data.

Photovoltaic x-ray detectors based on the GaAs epitaxial structures

CERN Document Server

Akhmadullin, R A; Dvoryankina, G G; Dikaev, Y M; Ermakov, M G; Ermakova, O N; Krikunov, A I; Kudryashov, A A; Petrov, A G; Telegin, A A

2002-01-01

The new photovoltaic detector of the X-ray radiation is proposed on the basis of the GaAs epitaxial structures, which operates with high efficiency of the charge carriers collection without shift voltage and at the room temperature. The structures are grown by the method of the gas-phase epitaxy on the n sup + -type highly-alloyed substrates. The range of sensitivity to the X-ray radiation is within the range of effective energies from 8 up to 120 keV. The detector maximum response in the current short circuit mode is determined

Epitaxial heterojunctions of oxide semiconductors and metals on high temperature superconductors

Science.gov (United States)

Vasquez, Richard P. (Inventor); Hunt, Brian D. (Inventor); Foote, Marc C. (Inventor)

1994-01-01

Epitaxial heterojunctions formed between high temperature superconductors and metallic or semiconducting oxide barrier layers are provided. Metallic perovskites such as LaTiO3, CaVO3, and SrVO3 are grown on electron-type high temperature superconductors such as Nd(1.85)Ce(0.15)CuO(4-x). Alternatively, transition metal bronzes of the form A(x)MO(3) are epitaxially grown on electron-type high temperature superconductors. Also, semiconducting oxides of perovskite-related crystal structures such as WO3 are grown on either hole-type or electron-type high temperature superconductors.

1366 Project Automate: Enabling Automation for <$0.10/W High-Efficiency Kerfless Wafers Manufactured in the US

Energy Technology Data Exchange (ETDEWEB)

Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

2017-05-10

For photovoltaic (PV) manufacturing to thrive in the U.S., there must be an innovative core to the technology. Project Automate builds on 1366’s proprietary Direct Wafer® kerfless wafer technology and aims to unlock the cost and efficiency advantages of thin kerfless wafers. Direct Wafer is an innovative, U.S.-friendly (efficient, low-labor content) manufacturing process that addresses the main cost barrier limiting silicon PV cost-reductions – the 35-year-old grand challenge of manufacturing quality wafers (40% of the cost of modules) without the cost and waste of sawing. This simple, scalable process will allow 1366 to manufacture “drop-in” replacement wafers for the $10 billion silicon PV wafer market at 50% of the cost, 60% of the capital, and 30% of the electricity of conventional casting and sawing manufacturing processes. This SolarMat project developed the Direct Wafer processes’ unique capability to tailor the shape of wafers to simultaneously make thinner AND stronger wafers (with lower silicon usage) that enable high-efficiency cell architectures. By producing wafers with a unique target geometry including a thick border (which determines handling characteristics) and thin interior regions (which control light capture and electron transport and therefore determine efficiency), 1366 can simultaneously improve quality and lower cost (using less silicon).

Extreme triple asymmetric (ETAS) epitaxial designs for increased efficiency at high powers in 9xx-nm diode lasers

Science.gov (United States)

Kaul, T.; Erbert, G.; Maaßdorf, A.; Martin, D.; Crump, P.

2018-02-01

Broad area lasers that are tailored to be most efficient at the highest achievable optical output power are sought by industry to decrease operation costs and improve system performance. Devices using Extreme-Double-ASymmetric (EDAS) epitaxial designs are promising candidates for improved efficiency at high optical output powers due to low series resistance, low optical loss and low carrier leakage. However, EDAS designs leverage ultra-thin p-side waveguides, meaning that the optical mode is shifted into the n-side waveguide, resulting in a low optical confinement in the active region, low gain and hence high threshold current, limiting peak performance. We introduce here explicit design considerations that enable EDAS-based devices to be developed with increased optical confinement in the active layer without changing the p-side layer thicknesses. Specifically, this is realized by introducing a third asymmetric component in the vicinity of the quantum well. We call this approach Extreme-Triple-ASymmetric (ETAS) design. A series of ETAS-based vertical designs were fabricated into broad area lasers that deliver up to 63% power conversion efficiency at 14 W CW optical output power from a 100 μm stripe laser, which corresponds to the operation point of a kW optical output power in a laser bar. The design process, the impact of structural changes on power saturation mechanisms and finally devices with improved performance will be presented.

A relativity concept in mesenchymal stromal cell manufacturing.

Science.gov (United States)

Martin, Ivan; De Boer, Jan; Sensebe, Luc

2016-05-01

Mesenchymal stromal cells (MSCs) are being experimentally tested in several biological systems and clinical settings with the aim of verifying possible therapeutic effects for a variety of indications. MSCs are also known to be heterogeneous populations, with phenotypic and functional features that depend heavily on the individual donor, the harvest site, and the culture conditions. In the context of this multidimensional complexity, a recurrent question is whether it is feasible to produce MSC batches as "standard" therapeutics, possibly within scalable manufacturing systems. Here, we provide a short overview of the literature on different culture methods for MSCs, including those employing innovative technologies, and of some typically assessed functional features (e.g., growth, senescence, genomic stability, clonogenicity, etc.). We then offer our perspective of a roadmap on how to identify and refine manufacturing systems for MSCs intended for specific clinical indications. We submit that the vision of producing MSCs according to a unique standard, although commercially attractive, cannot yet be scientifically substantiated. Instead, efforts should be concentrated on standardizing methods for characterization of MSCs generated by different groups, possibly covering a vast gamut of functionalities. Such assessments, combined with hypotheses on the therapeutic mode of action and associated clinical data, should ultimately allow definition of in-process controls and measurable release criteria for MSC manufacturing. These will have to be validated as predictive of potency in suitable pre-clinical models and of therapeutic efficacy in patients. Copyright © 2016 International Society for Cellular Therapy. Published by Elsevier Inc. All rights reserved.

Structural evolution of epitaxial SrCoOx films near topotactic phase transition

OpenAIRE

Hyoungjeen Jeen; Ho Nyung Lee

2015-01-01

Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoOx) epitaxially grown by pulsed laser epitaxy (PLE) as a model syste...

Scalable DeNoise-and-Forward in Bidirectional Relay Networks

DEFF Research Database (Denmark)

Sørensen, Jesper Hemming; Krigslund, Rasmus; Popovski, Petar

2010-01-01

In this paper a scalable relaying scheme is proposed based on an existing concept called DeNoise-and-Forward, DNF. We call it Scalable DNF, S-DNF, and it targets the scenario with multiple communication flows through a single common relay. The idea of the scheme is to combine packets at the relay...... in order to save transmissions. To ensure decodability at the end-nodes, a priori information about the content of the combined packets must be available. This is gathered during the initial transmissions to the relay. The trade-off between decodability and number of necessary transmissions is analysed...

Liquid phase electro epitaxy growth kinetics of GaAs-A three-dimensional numerical simulation study

International Nuclear Information System (INIS)

Mouleeswaran, D.; Dhanasekaran, R.

2006-01-01

A three-dimensional numerical simulation study for the liquid phase electro epitaxial growth kinetic of GaAs is presented. The kinetic model is constructed considering (i) the diffusive and convective mass transport, (ii) the heat transfer due to thermoelectric effects such as Peltier effect, Joule effect and Thomson effect, (iii) the electric current distribution with electromigration and (iv) the fluid flow coupled with concentration and temperature fields. The simulations are performed for two configurations namely (i) epitaxial growth from the arsenic saturated gallium rich growth solution, i.e., limited solution model and (ii) epitaxial growth from the arsenic saturated gallium rich growth solution with polycrystalline GaAs feed. The governing equations of liquid phase electro epitaxy are solved numerically with appropriate initial and boundary conditions using the central difference method. Simulations are performed to determine the following, a concentration profiles of solute atoms (As) in the Ga-rich growth solution, shape of the substrate evolution, the growth rate of the GaAs epitaxial film, the contributions of Peltier effect and electromigration of solute atoms to the growth with various experimental growth conditions. The growth rate is found to increase with increasing growth temperature and applied current density. The results are discussed in detail

Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices

International Nuclear Information System (INIS)

He Ze-Zhao; Yang Ke-Wu; Yu Cui; Li Jia; Liu Qing-Bin; Lu Wei-Li; Feng Zhi-Hong; Cai Shu-Jun

2015-01-01

We report on an improved metal-graphene ohmic contact in bilayer epitaxial graphene on a SiC substrate with contact resistance below 0.1 ω·mm. Monolayer and bilayer epitaxial graphenes are prepared on a 4H-SiC substrate in this work. Their contact resistances are measured by a transfer length method. An improved photoresist-free device fabrication method is used and is compared with the conventional device fabrication method. Compared with the monolayer graphene, the contact resistance R c of bilayer graphene improves from an average of 0.24 ω·mm to 0.1 ω·mm. Ohmic contact formation mechanism analysis by Landauer's approach reveals that the obtained low ohmic contact resistance in bilayer epitaxial graphene is due to their high carrier density, high carrier transmission probability, and p-type doping introduced by contact metal Au. (paper)

High-quality GaN epitaxially grown on Si substrate with serpentine channels

Science.gov (United States)

Wei, Tiantian; Zong, Hua; Jiang, Shengxiang; Yang, Yue; Liao, Hui; Xie, Yahong; Wang, Wenjie; Li, Junze; Tang, Jun; Hu, Xiaodong

2018-06-01

A novel serpentine-channeled mask was introduced to Si substrate for low-dislocation GaN epitaxial growth and the fully coalesced GaN film on the masked Si substrate was achieved for the first time. Compared with the epitaxial lateral overgrowth (ELOG) growth method, this innovative mask only requires one-step epitaxial growth of GaN which has only one high-dislocation region per mask opening. This new growth method can effectively reduce dislocation density, thus improving the quality of GaN significantly. High-quality GaN with low dislocation density ∼2.4 × 107 cm-2 was obtained, which accounted for about eighty percent of the GaN film in area. This innovative technique is promising for the growth of high-quality GaN templates and the subsequent fabrication of high-performance GaN-based devices like transistors, laser diodes (LDs), and light-emitting diodes (LEDs) on Si substrate.

Optical and electro-optic anisotropy of epitaxial PZT thin films

Science.gov (United States)

Zhu, Minmin; Du, Zehui; Jing, Lin; Yoong Tok, Alfred Iing; Tong Teo, Edwin Hang

2015-07-01

Strong optical and electro-optic (EO) anisotropy has been investigated in ferroelectric Pb(Zr0.48Ti0.52)O3 thin films epitaxially grown on Nb-SrTiO3 (001), (011), and (111) substrates using magnetron sputtering. The refractive index, electro-optic, and ferroelectric properties of the samples demonstrate the significant dependence on the growth orientation. The linear electro-optic coefficients of the (001), (011), and (111)-oriented PZT thin films were 270.8, 198.8, and 125.7 pm/V, respectively. Such remarkable anisotropic EO behaviors have been explained according to the structure correlation between the orientation dependent distribution, spontaneous polarization, epitaxial strain, and domain pattern.

Superconductivity of Rock-Salt Structure LaO Epitaxial Thin Film.

Science.gov (United States)

Kaminaga, Kenichi; Oka, Daichi; Hasegawa, Tetsuya; Fukumura, Tomoteru

2018-06-06

We report a superconducting transition in a LaO epitaxial thin film with the superconducting transition onset temperature ( T c ) at around 5 K. This T c is higher than those of other lanthanum monochalcogenides and opposite to their chemical trend: T c = 0.84, 1.02, and 1.48 K for LaX (X = S, Se, Te), respectively. The carrier control resulted in a dome-shaped T c as a function of electron carrier density. In addition, the T c was significantly sensitive to epitaxial strain in spite of the highly symmetric crystal structure. This rock-salt superconducting LaO could be a building block to design novel superlattice superconductors.

Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

International Nuclear Information System (INIS)

Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

2012-01-01

In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

Boron, arsenic and phosphorus dopant incorporation during low temperature low pressure silicon epitaxial growth

International Nuclear Information System (INIS)

Borland, J.O.; Thompson, T.; Tagle, V.; Benzing, W.

1987-01-01

Submicron silicon epitaxial structures with very abrupt epi/substrate transition widths have been realized through the use of low temperature silicon epitaxial growth techniques. At these low temperature and low pressure epitaxial growth conditions there is minimal, if any, dopant diffusion from the substrate into the epilayer during deposition. The reincorporation of autodoped dopant as well as the incorporation of intentional dopant can be a trade-off at low temperatures and low pressures. For advanced CMOS and Bi-CMOS technologies, five to six orders of magnitude change in concentration levels are desirable. In this investigation, all of the epitaxial depositions were carried out in an AMC-7810 epi-reactor with standard jets for a turbulent mixing system, and using a modified center inject configuration to achieve a single pass laminar flow system. To simulate the reincorporation of various autodoped dopant, the authors ran a controlled dopant flow of 100 sccm for each of the three dopants (boron, phosphorus and arsenic) to achieve the controlled background dopant level in the reactor gas stream

Data-Driven Modeling for Minimizing the Side-Channel Information Leakage in Additive Manufacturing

OpenAIRE

Faezi, Sina

2017-01-01

Cyber-physical additive manufacturing systems consists of tight integration of cyber and physical domains. This results in new cross-domain vulnerabilities that poses unique security challenges. One of the challenges is preventing confidentiality breach due to physical-to-cyber domain attacks, where attackers can use physical analog emissions to steal the cyber-domain information. This information theft is based on the idea that an attacker can accurately estimate the relation between the ana...

Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate

International Nuclear Information System (INIS)

Sun, Wen; Xu, Hongyi; Guo, Yanan; Gao, Qiang; Hoe Tan, Hark; Jagadish, Chennupati; Zou, Jin

2013-01-01

Simultaneous growth of 〈111〉 B free-standing and ±[110] lateral GaAsP epitaxial nanowires on GaAs (001) substrates were observed and investigated by electron microscopy and crystallographic analysis. It was found that the growth of both free-standing and lateral ternary nanowires via Au catalysts was driven by the fact that Au catalysts prefer to maintain low-energy (111) B interfaces with surrounding GaAs(P) materials: in the case of free-standing nanowires, Au catalysts maintain (111) B interfaces with their underlying GaAsP nanowires; while in the case of lateral nanowires, each Au catalyst remain their side (111) B interfaces with the surrounding GaAs(P) material during the lateral nanowire growth

High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process.

Science.gov (United States)

Gao, Ying; Asadirad, Mojtaba; Yao, Yao; Dutta, Pavel; Galstyan, Eduard; Shervin, Shahab; Lee, Keon-Hwa; Pouladi, Sara; Sun, Sicong; Li, Yongkuan; Rathi, Monika; Ryou, Jae-Hyun; Selvamanickam, Venkat

2016-11-02

Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm 2 /V·s and saturation current, I/l W > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs. The Si thin films with a (001) plane grown on a metal tape by a "seed and epitaxy" technique show nearly single-crystalline properties characterized by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and transmission electron microscopy. The realization of flexible and high-performance Si TFTs can establish a new pathway for extended applications of flexible electronics such as amplification and digital circuits, more than currently dominant display switches.

Epitaxial Al2O3 capacitors for low microwave loss superconducting quantum circuits

Directory of Open Access Journals (Sweden)

K.-H. Cho

2013-10-01

Full Text Available We have characterized the microwave loss of high-Q parallel plate capacitors fabricated from thin-film Al/Al2O3/Re heterostructures on (0001 Al2O3 substrates. The superconductor-insulator-superconductor trilayers were grown in situ in a hybrid deposition system: the epitaxial Re base and polycrystalline Al counterelectrode layers were grown by sputtering, while the epitaxial Al2O3 layer was grown by pulsed laser deposition. Structural analysis indicates a highly crystalline epitaxial Al2O3 layer and sharp interfaces. The measured intrinsic (low-power, low-temperature quality factor of the resonators is as high as 3 × 104. These results indicate that low-loss grown Al2O3 is an attractive candidate dielectric for high-fidelity superconducting qubit circuits.

Epitaxial strain-engineered self-assembly of magnetic nanostructures in FeRh thin films

International Nuclear Information System (INIS)

Witte, Ralf; Kruk, Robert; Molinari, Alan; Wang, Di; Brand, Richard A; Hahn, Horst; Schlabach, Sabine; Provenzano, Virgil

2017-01-01

In this paper we introduce an innovative bottom–up approach for engineering self-assembled magnetic nanostructures using epitaxial strain-induced twinning and phase separation. X-ray diffraction, 57 Fe Mössbauer spectroscopy, scanning tunneling microscopy, and transmission electron microscopy show that epitaxial films of a near-equiatomic FeRh alloy respond to the applied epitaxial strain by laterally splitting into two structural phases on the nanometer length scale. Most importantly, these two structural phases differ with respect to their magnetic properties, one being paramagnetic and the other ferromagnetic, thus leading to the formation of a patterned magnetic nanostructure. It is argued that the phase separation directly results from the different strain-dependence of the total energy of the two competing phases. This straightforward relation directly enables further tailoring and optimization of the nanostructures’ properties. (paper)

A scalable approach to modeling groundwater flow on massively parallel computers

International Nuclear Information System (INIS)

Ashby, S.F.; Falgout, R.D.; Tompson, A.F.B.

1995-12-01

We describe a fully scalable approach to the simulation of groundwater flow on a hierarchy of computing platforms, ranging from workstations to massively parallel computers. Specifically, we advocate the use of scalable conceptual models in which the subsurface model is defined independently of the computational grid on which the simulation takes place. We also describe a scalable multigrid algorithm for computing the groundwater flow velocities. We axe thus able to leverage both the engineer's time spent developing the conceptual model and the computing resources used in the numerical simulation. We have successfully employed this approach at the LLNL site, where we have run simulations ranging in size from just a few thousand spatial zones (on workstations) to more than eight million spatial zones (on the CRAY T3D)-all using the same conceptual model

Constraint Solver Techniques for Implementing Precise and Scalable Static Program Analysis

DEFF Research Database (Denmark)

Zhang, Ye

solver using unification we could make a program analysis easier to design and implement, much more scalable, and still as precise as expected. We present an inclusion constraint language with the explicit equality constructs for specifying program analysis problems, and a parameterized framework...... developers to build reliable software systems more quickly and with fewer bugs or security defects. While designing and implementing a program analysis remains a hard work, making it both scalable and precise is even more challenging. In this dissertation, we show that with a general inclusion constraint...... data flow analyses for C language, we demonstrate a large amount of equivalences could be detected by off-line analyses, and they could then be used by a constraint solver to significantly improve the scalability of an analysis without sacrificing any precision....

A critical discussion of the vacancy diffusion model of ion beam induced epitaxial crystallization

International Nuclear Information System (INIS)

Heera, V.

1989-01-01

A simple vacancy diffusion model of ion beam induced epitaxial crystallization of silicon including divacancy formation is developed. The model reproduces some of the experimental findings, as e.g. the dose rate dependence of the crystallization rate. However, the measured activation energy of the ion beam induced epitaxial crystallization cannot be accounted for by vacancy diffusion alone. (author)

The Economic Side Effects of Dangerous Drug Announcements.

OpenAIRE

Dranove, David; Olsen, Chris

1994-01-01

Immediately prior to the passage of the 1962 Food and Drug Administration Amendments, there were a number of drugs recalled from markets worldwide. Announcements about the dangerous side effects of these drugs were associated with lower-share prices for their manufacturers and the industry as a whole. We perform several analyses to sort out alternative explanations for the observed declines. We find that dangerous drug announcements had no effect on the sales of other drugs and didn't affect ...

Structural and magentic characterization of rare earth and transition metal films grown on epitaxial buffer films on semiconductor substrates

International Nuclear Information System (INIS)

Farrow, R.F.C.; Parkin, S.S.P.; Speriosu, V.S.; Bezinge, A.; Segmuller, A.P.

1989-01-01

Structural and magnetic data are presented and discussed for epitaxial films of rare earth metals (Dy, Ho, Er) on LaF 3 films on the GaAs(TTT) surface and Fe on Ag films on the GaAs(001) surface. Both systems exhibit unusual structural characteristics which influence the magnetic properties of the metal films. In the case of rare earth epitaxy on LaF 3 the authors present evidence for epitaxy across an incommensurate or discommensurate interface. Coherency strain is not transmitted into the metal which behaves much like bulk crystals of the rare earths. In the case of Fe films, tilted epitaxy and long-range coherency strain are confirmed by X- ray diffractometry. Methods of controlling some of these structural effects by modifying the epitaxial structures are presented

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

Science.gov (United States)

Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

2016-04-22

High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

Algorithmic psychometrics and the scalable subject.

Science.gov (United States)

Stark, Luke

2018-04-01

Recent public controversies, ranging from the 2014 Facebook 'emotional contagion' study to psychographic data profiling by Cambridge Analytica in the 2016 American presidential election, Brexit referendum and elsewhere, signal watershed moments in which the intersecting trajectories of psychology and computer science have become matters of public concern. The entangled history of these two fields grounds the application of applied psychological techniques to digital technologies, and an investment in applying calculability to human subjectivity. Today, a quantifiable psychological subject position has been translated, via 'big data' sets and algorithmic analysis, into a model subject amenable to classification through digital media platforms. I term this position the 'scalable subject', arguing it has been shaped and made legible by algorithmic psychometrics - a broad set of affordances in digital platforms shaped by psychology and the behavioral sciences. In describing the contours of this 'scalable subject', this paper highlights the urgent need for renewed attention from STS scholars on the psy sciences, and on a computational politics attentive to psychology, emotional expression, and sociality via digital media.

Scalable Simulation of Electromagnetic Hybrid Codes

International Nuclear Information System (INIS)

Perumalla, Kalyan S.; Fujimoto, Richard; Karimabadi, Dr. Homa

2006-01-01

New discrete-event formulations of physics simulation models are emerging that can outperform models based on traditional time-stepped techniques. Detailed simulation of the Earth's magnetosphere, for example, requires execution of sub-models that are at widely differing timescales. In contrast to time-stepped simulation which requires tightly coupled updates to entire system state at regular time intervals, the new discrete event simulation (DES) approaches help evolve the states of sub-models on relatively independent timescales. However, parallel execution of DES-based models raises challenges with respect to their scalability and performance. One of the key challenges is to improve the computation granularity to offset synchronization and communication overheads within and across processors. Our previous work was limited in scalability and runtime performance due to the parallelization challenges. Here we report on optimizations we performed on DES-based plasma simulation models to improve parallel performance. The net result is the capability to simulate hybrid particle-in-cell (PIC) models with over 2 billion ion particles using 512 processors on supercomputing platforms

Scalable, full-colour and controllable chromotropic plasmonic printing

Science.gov (United States)

Xue, Jiancai; Zhou, Zhang-Kai; Wei, Zhiqiang; Su, Rongbin; Lai, Juan; Li, Juntao; Li, Chao; Zhang, Tengwei; Wang, Xue-Hua

2015-01-01

Plasmonic colour printing has drawn wide attention as a promising candidate for the next-generation colour-printing technology. However, an efficient approach to realize full colour and scalable fabrication is still lacking, which prevents plasmonic colour printing from practical applications. Here we present a scalable and full-colour plasmonic printing approach by combining conjugate twin-phase modulation with a plasmonic broadband absorber. More importantly, our approach also demonstrates controllable chromotropic capability, that is, the ability of reversible colour transformations. This chromotropic capability affords enormous potentials in building functionalized prints for anticounterfeiting, special label, and high-density data encryption storage. With such excellent performances in functional colour applications, this colour-printing approach could pave the way for plasmonic colour printing in real-world commercial utilization. PMID:26567803

X-ray diffraction study of rare earth epitaxial structures grown by MBE onto (111) GaAs

International Nuclear Information System (INIS)

Bennett, W.R.; Farrow, R.F.C.; Parkin, S.S.P.; Marinero, E.E.; Segmuller, A.P.

1989-01-01

The authors report on the new epitaxial system LaF 3 /Er/Dy/Er/LaF 3 /GaAs(111) grown by molecular beam epitaxy. X-ray diffraction studies have been used to determine the epitaxial relationships between the rare earths, the LaF 3 and the substrate. Further studies of symmetric and asymmetric reflections yielded the in-plane and perpendicular strain components of the rare earth layers. Such systems may be used to probe the effects of magnetoelastic interactions and dimensionality on magnetic ordering in rare earth metal films

Strain induced ionic conductivity enhancement in epitaxial Ce0.9Gd0.1O22d

DEFF Research Database (Denmark)

Kant, K. Mohan; Esposito, Vincenzo; Pryds, Nini

2012-01-01

-plane ionic conductivity in CGO epitaxial thin films. The ionic conductivity is found to increase with decrease in buffer layer thickness. The tailored ionic conductivity enhancement is explained in terms of close relationships among epitaxy, strain, and ionic conductivity....

Making a commercial carbon fiber cloth having comparable capacitances to carbon nanotubes and graphene in supercapacitors through a "top-down" approach.

Science.gov (United States)

Zhang, Tianchang; Kim, Christine H J; Cheng, Yingwen; Ma, Yanwen; Zhang, Hongbo; Liu, Jie

2015-02-21

A "top-down" and scalable approach for processing carbon fiber cloth (CFC) into flexible and all-carbon electrodes with remarkable areal capacity and cyclic stability was developed. CFC is commercially available in large quantities but its use as an electrode material in supercapacitors is not satisfactory. The approach demonstrated in this work is based on the sequential treatment of CFC with KOH activation and high temperature annealing that can effectively improve its specific surface area to a remarkable 2780 m(2) g(-1) while at the same time achieving a good electrical conductivity of 320 S m(-1) without sacrificing its intrinsic mechanical strength and flexibility. The processed CFC can be directly used as an electrode for supercapacitors without any binders, conductive additives and current collectors while avoiding elaborate electrode processing steps to deliver a specific capacitance of ∼0.5 F cm(-2) and ∼197 F g(-1) with remarkable rate performance and excellent cyclic stability. The properties of these processed CFCs are comparable or better than graphene and carbon nanotube based electrodes. We further demonstrate symmetric solid-state supercapacitors based on these processed CFCs with very good flexibility. This "top-down" and scalable approach can be readily applied to other types of commercially available carbon materials and therefore can have a substantial significance for high performance supercapacitor devices.

On the kinetic barriers of graphene homo-epitaxy

International Nuclear Information System (INIS)

Zhang, Wei; Yu, Xinke; Xie, Ya-Hong; Cahyadi, Erica; Ratsch, Christian

2014-01-01

The diffusion processes and kinetic barriers of individual carbon adatoms and clusters on graphene surfaces are investigated to provide fundamental understanding of the physics governing epitaxial growth of multilayer graphene. It is found that individual carbon adatoms form bonds with the underlying graphene whereas the interaction between graphene and carbon clusters, consisting of 6 atoms or more, is very weak being van der Waals in nature. Therefore, small carbon clusters are quite mobile on the graphene surfaces and the diffusion barrier is negligibly small (∼6 meV). This suggests the feasibility of high-quality graphene epitaxial growth at very low growth temperatures with small carbon clusters (e.g., hexagons) as carbon source. We propose that the growth mode is totally different from 3-dimensional bulk materials with the surface mobility of carbon hexagons being the highest over graphene surfaces that gradually decreases with further increase in cluster size

Scalable Domain Decomposed Monte Carlo Particle Transport

Energy Technology Data Exchange (ETDEWEB)

O' Brien, Matthew Joseph [Univ. of California, Davis, CA (United States)

2013-12-05

In this dissertation, we present the parallel algorithms necessary to run domain decomposed Monte Carlo particle transport on large numbers of processors (millions of processors). Previous algorithms were not scalable, and the parallel overhead became more computationally costly than the numerical simulation.

SiGe BiCMOS manufacturing platform for mmWave applications

Science.gov (United States)

Kar-Roy, Arjun; Howard, David; Preisler, Edward; Racanelli, Marco; Chaudhry, Samir; Blaschke, Volker

2010-10-01

TowerJazz offers high volume manufacturable commercial SiGe BiCMOS technology platforms to address the mmWave market. In this paper, first, the SiGe BiCMOS process technology platforms such as SBC18 and SBC13 are described. These manufacturing platforms integrate 200 GHz fT/fMAX SiGe NPN with deep trench isolation into 0.18μm and 0.13μm node CMOS processes along with high density 5.6fF/μm2 stacked MIM capacitors, high value polysilicon resistors, high-Q metal resistors, lateral PNP transistors, and triple well isolation using deep n-well for mixed-signal integration, and, multiple varactors and compact high-Q inductors for RF needs. Second, design enablement tools that maximize performance and lowers costs and time to market such as scalable PSP and HICUM models, statistical and Xsigma models, reliability modeling tools, process control model tools, inductor toolbox and transmission line models are described. Finally, demonstrations in silicon for mmWave applications in the areas of optical networking, mobile broadband, phased array radar, collision avoidance radar and W-band imaging are listed.

Surface control alloy substrates and methods of manufacture therefor

Energy Technology Data Exchange (ETDEWEB)

Fritzemeier, Leslie G. (Mendon, MA); Li, Qi (Marlborough, MA); Rupich, Martin W. (Framingham, MA); Thompson, Elliott D. (Coventry, RI); Siegal, Edward J. (Malden, MA); Thieme, Cornelis Leo Hans (Westborough, MA); Annavarapu, Suresh (Brookline, MA); Arendt, Paul N. (Los Alamos, NM); Foltyn, Stephen R. (Los Alamos, NM)

2004-05-04

Methods and articles for controlling the surface of an alloy substrate for deposition of an epitaxial layer. The invention includes the use of an intermediate layer to stabilize the substrate surface against oxidation for subsequent deposition of an epitaxial layer.

European preparations for the ITER VV sectors manufacture

International Nuclear Information System (INIS)

Jones, Lawrence; Arbogast, Jean-Francois; Bayon, Angel; Galvan, Stefano; Giraud, Benoit; Ioki, Kimihiro; Losasso, Marcello; Mico, Gonzalo; Stamos, Vassilis; Trentea, Alexandru; Utin, Yuri

2011-01-01

For the benefit of the bidders for the Call-for-Tender for the 7 sectors of the ITER Vacuum Vessel, launched in early 2010, a large amount of relevant technical information was included to ensure a rapid start to successful manufacture programme, without the need for a full-scale prototype, which would cause an unacceptable delay to the ITER schedule. The methodology of the logical structures of the specification and the additional planned mock-ups are described and the results from nearly a decade of R and D and manufacturing studies carried out inside the EU under the auspices of EFDA and F4E are also summarised. The work covers the evolution of novel manufacturing schemes and technologies, including a modular special local machining centre for making holes in the shell of the vessel with weld preparation included. New results from the combined studies by three parties, and using a round-robin trial system on the UT inspection of single-sided welds, including the successful control of the root side are described. A full-scale, partial prototype has demonstrated the successful construction segments using jigs to control the distortion from conventional welding, from the inner shell to the outer shell, and then the joining of the segments to form a part sector. The paper also summarises the results from the prototype segment, manufactured without jigs and using only EB welds. In order to be able to achieve the required as-welded tight tolerances, two specialised computational techniques have been developed, using SYSWELD and ANSYS codes and calibrated with the mock-ups in order to efficiently predict welding distortions. Based on this successful practical and theoretical work, computer models of the complete poloidal segments or sectors, including jigs, were can now generated and used to investigate many welding sequences in order to optimise the construction and achieve all the tolerances.

Magnetic anisotropy basis sets for epitaxial (110) and (111) REFe2 nanofilms

International Nuclear Information System (INIS)

Bowden, G J; Martin, K N; Fox, A; Rainford, B D; Groot, P A J de

2008-01-01

Magnetic anisotropy basis sets for the cubic Laves phase rare earth intermetallic REFe 2 compounds are discussed in some detail. Such compounds can be either free standing, or thin films grown in either (110) or (111) mode using molecular beam epitaxy. For the latter, it is useful to rotate to a new coordinate system where the z-axis coincides with the growth axes of the film. In this paper, three symmetry adapted basis sets are given, for multi-pole moments up to n = 12. These sets can be used for free-standing compounds and for (110) and (111) epitaxial films. In addition, the distortion of REFe 2 films, grown on sapphire substrates, is also considered. The distortions are different for the (110) and (111) films. Strain-induced harmonic sets are given for both specific and general distortions. Finally, some predictions are made concerning the preferred direction of easy magnetization in (111) molecular beam epitaxy grown REFe 2 films

Raman investigation of GaP–Si interfaces grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Bondi, A.; Cornet, C.; Boyer, S.; Nguyen Thanh, T.; Létoublon, A.; Pedesseau, L.; Durand, O. [Université Européenne de Bretagne, INSA, FOTON, UMR CNRS 6082, 20 Avenue des Buttes de Coësmes, F-35708 Rennes (France); Moreac, A. [Institut de Physique de Rennes, UMR-CNRS n°6251, Université Rennes1, Campus de Beaulieu — 35042 Rennes cedex (France); Ponchet, A. [CEMES, UPR CNRS 8011, F-31055 Toulouse (France); Le Corre, A. [Université Européenne de Bretagne, INSA, FOTON, UMR CNRS 6082, 20 Avenue des Buttes de Coësmes, F-35708 Rennes (France); Even, J., E-mail: jacky.even@insa.rennes.fr [Université Européenne de Bretagne, INSA, FOTON, UMR CNRS 6082, 20 Avenue des Buttes de Coësmes, F-35708 Rennes (France)

2013-08-31

Raman spectroscopy was used to investigate the residual strain in thin GaP layers deposited on Si substrates by molecular beam epitaxy. Different growth conditions were used to obtain a clean GaP–Si interface, including migration enhanced epitaxy. The strain induced Raman shifts of the longitudinal and the transverse optical GaP lattice modes were analyzed. The effects of crystalline defects are discussed, supported by high resolution transmission electron microscopy and X-ray scattering studies. Finally, Raman Spectroscopy reveals the presence of disorder (or surface)-activated optical phonons. This result is discussed in the light of surface morphology analyses. - Highlights: ► GaP thin layers grown by molecular beam epitaxy on Si substrates. ► Strain-induced Raman shifts of the optical GaP modes are analyzed. ► Simulation of optical GaP modes by density functional perturbation theory. ► Comparison with X-ray diffraction and electron and scanning probe microscopy data.

Epitaxial growth of Ge-Sb-Te based phase change materials

International Nuclear Information System (INIS)

Perumal, Karthick

2013-01-01

Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb 2 Te 3 thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb 2 Te 3 to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors

International Nuclear Information System (INIS)

Li, Z.; Eremin, V.; Ilyashenko, I.; Ivanov, A.; Verbitskaya, E.

1997-12-01

Epitaxial grown thick layers (≥ 100 micrometers) of high resistivity silicon (Epi-Si) have been investigated as a possible candidate of radiation hardened material for detectors for high-energy physics. As grown Epi-Si layers contain high concentration (up to 2 x 10 12 cm -3 ) of deep levels compared with that in standard high resistivity bulk Si. After irradiation of test diodes by protons (E p = 24 GeV) with a fluence of 1.5 x 10 11 cm -2 , no additional radiation induced deep traps have been detected. A reasonable explanation is that there is a sink of primary radiation induced defects (interstitial and vacancies), possibly by as-grown defects, in epitaxial layers. The ''sinking'' process, however, becomes non-effective at high radiation fluences (10 14 cm -2 ) due to saturation of epitaxial defects by high concentration of radiation induced ones. As a result, at neutron fluence of 1 x 10 14 cm -2 the deep level spectrum corresponds to well-known spectrum of radiation induced defects in high resistivity bulk Si. The net effective concentration in the space charge region equals to 3 x 10 12 cm -3 after 3 months of room temperature storage and reveals similar annealing behavior for epitaxial as compared to bulk silicon

Process for forming epitaxial perovskite thin film layers using halide precursors

Science.gov (United States)

Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

2001-01-01

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Quantum Hall effect in epitaxial graphene with permanent magnets.

Science.gov (United States)

Parmentier, F D; Cazimajou, T; Sekine, Y; Hibino, H; Irie, H; Glattli, D C; Kumada, N; Roulleau, P

2016-12-06

We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

Quantum Hall effect in epitaxial graphene with permanent magnets

Science.gov (United States)

Parmentier, F. D.; Cazimajou, T.; Sekine, Y.; Hibino, H.; Irie, H.; Glattli, D. C.; Kumada, N.; Roulleau, P.

2016-12-01

We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne, E-mail: stemmer@mrl.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

2016-01-01

High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

A scalable platform for biomechanical studies of tissue cutting forces

International Nuclear Information System (INIS)

Valdastri, P; Tognarelli, S; Menciassi, A; Dario, P

2009-01-01

This paper presents a novel and scalable experimental platform for biomechanical analysis of tissue cutting that exploits a triaxial force-sensitive scalpel and a high resolution vision system. Real-time measurements of cutting forces can be used simultaneously with accurate visual information in order to extract important biomechanical clues in real time that would aid the surgeon during minimally invasive intervention in preserving healthy tissues. Furthermore, the in vivo data gathered can be used for modeling the viscoelastic behavior of soft tissues, which is an important issue in surgical simulator development. Thanks to a modular approach, this platform can be scaled down, thus enabling in vivo real-time robotic applications. Several cutting experiments were conducted with soft porcine tissues (lung, liver and kidney) chosen as ideal candidates for biopsy procedures. The cutting force curves show repeated self-similar units of localized loading followed by unloading. With regards to tissue properties, the depth of cut plays a significant role in the magnitude of the cutting force acting on the blade. Image processing techniques and dedicated algorithms were used to outline the surface of the tissues and estimate the time variation of the depth of cut. The depth of cut was finally used to obtain the normalized cutting force, thus allowing comparative biomechanical analysis

Using scalable vector graphics to evolve art

NARCIS (Netherlands)

den Heijer, E.; Eiben, A. E.

2016-01-01

In this paper, we describe our investigations of the use of scalable vector graphics as a genotype representation in evolutionary art. We describe the technical aspects of using SVG in evolutionary art, and explain our custom, SVG specific operators initialisation, mutation and crossover. We perform

Optical properties of pure and Ce3+ doped gadolinium gallium garnet crystals and epitaxial layers

International Nuclear Information System (INIS)

Syvorotka, I.I.; Sugak, D.; Wierzbicka, A.; Wittlin, A.; Przybylińska, H.; Barzowska, J.; Barcz, A.; Berkowski, M.; Domagała, J.; Mahlik, S.; Grinberg, M.; Ma, Chong-Geng

2015-01-01

Results of X-ray diffraction and low temperature optical absorption measurements of cerium doped gadolinium gallium garnet single crystals and epitaxial layers are reported. In the region of intra-configurational 4f–4f transitions the spectra of the bulk crystals exhibit the signatures of several different Ce 3+ related centers. Apart from the dominant center, associated with Ce substituting gadolinium, at least three other centers are found, some of them attributed to the so-called antisite locations of rare-earth ions in the garnet host, i.e., in the Ga positions. X-ray diffraction data prove lattice expansion of bulk GGG crystals due to the presence of rare-earth antisites. The concentration of the additional Ce-related centers in epitaxial layers is much lower than in the bulk crystals. However, the Ce-doped layers incorporate a large amount of Pb from flux, which is the most probable source of nonradiative quenching of Ce luminescence, not observed in crystals grown by the Czochralski method. - Highlights: • Ce 3+ multicenters found in Gadolinium Gallium Garnet crystals and epitaxial layers. • High quality epitaxial layers of pure and Ce-doped GGG were grown. • Luminescence quenching of Ce 3+ by Pb ions from flux detected in GGG epitaxial layers. • X-ray diffraction allows measuring the amount of the rare-earth antisites in GGG

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

Directory of Open Access Journals (Sweden)

Takeo Ohno and Yutaka Oyama

2012-01-01

Full Text Available In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE, in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

Cyan laser diode grown by plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Turski, H.; Muziol, G.; Wolny, P.; Cywiński, G.; Grzanka, S.; Sawicka, M.; Perlin, P.; Skierbiszewski, C.

2014-01-01

We demonstrate AlGaN-cladding-free laser diodes (LDs), operating in continuous wave (CW) mode at 482 nm grown by plasma-assisted molecular beam epitaxy (PAMBE). The maximum CW output power was 230 mW. LDs were grown on c-plane GaN substrates obtained by hydride vapor phase epitaxy. The PAMBE process was carried out in metal-rich conditions, supplying high nitrogen flux (Φ N ) during quantum wells (QWs) growth. We found that high Φ N improves quality of high In content InGaN QWs. The role of nitrogen in the growth of InGaN on (0001) GaN surface as well as the influence of LDs design on threshold current density are discussed

Single-event burnout of epitaxial bipolar transistors

Energy Technology Data Exchange (ETDEWEB)

Kuboyama, S.; Sugimoto, K.; Shugyo, S.; Matsuda, S. [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan); Hirao, T. [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan)

1998-12-01

Single-Event Burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs, including small signal transistors, with thinner epitaxial layers were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified.

Processing and Representation of Arguments in One-Sided Texts about Disputed Topics

Science.gov (United States)

Wolfe, Michael B.; Tanner, Shawna M.; Taylor, Andrew R.

2013-01-01

We examine students' processing and representation of arguments and counterarguments in one-sided scientific texts. In Experiment 1, students read texts about evolution and TV violence. Sentence reading times indicated that subjects slowed down reading to the extent that arguments were both more consistent, and inconsistent, with the text…

Pump-probe surface photovoltage spectroscopy measurements on semiconductor epitaxial layers

International Nuclear Information System (INIS)

Jana, Dipankar; Porwal, S.; Sharma, T. K.; Oak, S. M.; Kumar, Shailendra

2014-01-01

Pump-probe Surface Photovoltage Spectroscopy (SPS) measurements are performed on semiconductor epitaxial layers. Here, an additional sub-bandgap cw pump laser beam is used in a conventional chopped light geometry SPS setup under the pump-probe configuration. The main role of pump laser beam is to saturate the sub-bandgap localized states whose contribution otherwise swamp the information related to the bandgap of material. It also affects the magnitude of Dember voltage in case of semi-insulating (SI) semiconductor substrates. Pump-probe SPS technique enables an accurate determination of the bandgap of semiconductor epitaxial layers even under the strong influence of localized sub-bandgap states. The pump beam is found to be very effective in suppressing the effect of surface/interface and bulk trap states. The overall magnitude of SPV signal is decided by the dependence of charge separation mechanisms on the intensity of the pump beam. On the contrary, an above bandgap cw pump laser can be used to distinguish the signatures of sub-bandgap states by suppressing the band edge related feature. Usefulness of the pump-probe SPS technique is established by unambiguously determining the bandgap of p-GaAs epitaxial layers grown on SI-GaAs substrates, SI-InP wafers, and p-GaN epilayers grown on Sapphire substrates

Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

2016-07-04

Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

Scalable Open Source Smart Grid Simulator (SGSim)

DEFF Research Database (Denmark)

Ebeid, Emad Samuel Malki; Jacobsen, Rune Hylsberg; Stefanni, Francesco

2017-01-01

. This paper presents an open source smart grid simulator (SGSim). The simulator is based on open source SystemC Network Simulation Library (SCNSL) and aims to model scalable smart grid applications. SGSim has been tested under different smart grid scenarios that contain hundreds of thousands of households...

Epitaxy of advanced nanowire quantum devices

Science.gov (United States)

Gazibegovic, Sasa; Car, Diana; Zhang, Hao; Balk, Stijn C.; Logan, John A.; de Moor, Michiel W. A.; Cassidy, Maja C.; Schmits, Rudi; Xu, Di; Wang, Guanzhong; Krogstrup, Peter; Op Het Veld, Roy L. M.; Zuo, Kun; Vos, Yoram; Shen, Jie; Bouman, Daniël; Shojaei, Borzoyeh; Pennachio, Daniel; Lee, Joon Sue; van Veldhoven, Petrus J.; Koelling, Sebastian; Verheijen, Marcel A.; Kouwenhoven, Leo P.; Palmstrøm, Chris J.; Bakkers, Erik P. A. M.

2017-08-01

Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a superconductor. To exploit the potential of non-Abelian anyons—which are key elements of topological quantum computing—fully, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of crystalline nanowires coupled to superconducting islands. Here we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks with a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire ‘hashtags’ reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase-coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap (with vanishing sub-gap conductance) is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens up new avenues for the realization of epitaxial three-dimensional quantum architectures which have the potential to become key components of various quantum devices.

Scientific visualization uncertainty, multifield, biomedical, and scalable visualization

CERN Document Server

Chen, Min; Johnson, Christopher; Kaufman, Arie; Hagen, Hans

2014-01-01

Based on the seminar that took place in Dagstuhl, Germany in June 2011, this contributed volume studies the four important topics within the scientific visualization field: uncertainty visualization, multifield visualization, biomedical visualization and scalable visualization. • Uncertainty visualization deals with uncertain data from simulations or sampled data, uncertainty due to the mathematical processes operating on the data, and uncertainty in the visual representation, • Multifield visualization addresses the need to depict multiple data at individual locations and the combination of multiple datasets, • Biomedical is a vast field with select subtopics addressed from scanning methodologies to structural applications to biological applications, • Scalability in scientific visualization is critical as data grows and computational devices range from hand-held mobile devices to exascale computational platforms. Scientific Visualization will be useful to practitioners of scientific visualization, ...

Scalable quantum memory in the ultrastrong coupling regime.

Science.gov (United States)

Kyaw, T H; Felicetti, S; Romero, G; Solano, E; Kwek, L-C

2015-03-02

Circuit quantum electrodynamics, consisting of superconducting artificial atoms coupled to on-chip resonators, represents a prime candidate to implement the scalable quantum computing architecture because of the presence of good tunability and controllability. Furthermore, recent advances have pushed the technology towards the ultrastrong coupling regime of light-matter interaction, where the qubit-resonator coupling strength reaches a considerable fraction of the resonator frequency. Here, we propose a qubit-resonator system operating in that regime, as a quantum memory device and study the storage and retrieval of quantum information in and from the Z2 parity-protected quantum memory, within experimentally feasible schemes. We are also convinced that our proposal might pave a way to realize a scalable quantum random-access memory due to its fast storage and readout performances.

Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry

Energy Technology Data Exchange (ETDEWEB)

Jayachandran, Suseendran, E-mail: suseendran.jayachandran@imec.be [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Delabie, Annelies; Billen, Arne [KU Leuven, Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Dekkers, Harold; Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Caymax, Matty [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, Wilfried [KU Leuven, Department of Physics and Astronomy, Celestijnenlaan 200D, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, Marc [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium)

2015-01-01

Highlights: • Atomic layer is deposited by O{sub 3} chemisorption reaction on H-terminated Si(100). • O-content has critical impact on the epitaxial thickness of the above-deposited Si. • Oxygen atoms at dimer/back bond configurations enable epitaxial Si on O atomic layer. • Oxygen atoms at hydroxyl and more back bonds, disable epitaxial Si on O atomic layer. - Abstract: Epitaxial Si-O superlattices consist of alternating periods of crystalline Si layers and atomic layers of oxygen (O) with interesting electronic and optical properties. To understand the fundamentals of Si epitaxy on O atomic layers, we investigate the O surface species that can allow epitaxial Si chemical vapor deposition using silane. The surface reaction of ozone on H-terminated Si(100) is used for the O deposition. The oxygen content is controlled precisely at and near the atomic layer level and has a critical impact on the subsequent Si deposition. There exists only a small window of O-contents, i.e. 0.7–0.9 atomic layers, for which the epitaxial deposition of Si can be realized. At these low O-contents, the O atoms are incorporated in the Si-Si dimers or back bonds (-OSiH), with the surface Si atoms mainly in the 1+ oxidation state, as indicated by infrared spectroscopy. This surface enables epitaxial seeding of Si. For O-contents higher than one atomic layer, the additional O atoms are incorporated in the Si-Si back bonds as well as in the Si-H bonds, where hydroxyl groups (-Si-OH) are created. In this case, the Si deposition thereon becomes completely amorphous.

Microwave impedance of epitaxial high-temperature superconductor films

International Nuclear Information System (INIS)

Melkov, G.A.; Malyshev, V.Yu.; Bagada, A.V.

1995-01-01

In the 3 cm band dependences of the epitaxial HTS film surface resistance on the magnitude of ac and dc magnetic fields have been measured. YBa 2 Cu 3 O 7-σ films on sapphire were investigated. It was established that alternating magnetic field produces a stronger impact on the surface resistance than dc field. To explain experimental results the assumption is made that a HTS film is not an ideal superconductor and consists of series-connected sections of various types: sections of an ideal superconductor, sections of low and large resistance intragranular Josephson junctions, shunted by the ideal superconductor, and finally, sections of intergranular Josephson junctions few for epitaxial films. In these conditions the dependences of the surface resistance on dc magnetic field are caused by Abrikosov's vortices moving in ideal superconductive sections, and dependences on the amplitude of ac magnetic field are caused by switching of large resistance junctions to a low resistance state

Epitaxially grown polycrystalline silicon thin-film solar cells on solid-phase crystallised seed layers

Energy Technology Data Exchange (ETDEWEB)

Li, Wei, E-mail: weili.unsw@gmail.com; Varlamov, Sergey; Xue, Chaowei

2014-09-30

Highlights: • Crystallisation kinetic is used to analyse seed layer surface cleanliness. • Simplified RCA cleaning for the seed layer can shorten the epitaxy annealing duration. • RTA for the seed layer can improve the quality for both seed layer and epi-layer. • Epitaxial poly-Si solar cell performance is improved by RTA treated seed layer. - Abstract: This paper presents the fabrication of poly-Si thin film solar cells on glass substrates using seed layer approach. The solid-phase crystallised P-doped seed layer is not only used as the crystalline template for the epitaxial growth but also as the emitter for the solar cell structure. This paper investigates two important factors, surface cleaning and intragrain defects elimination for the seed layer, which can greatly influence the epitaxial grown solar cell performance. Shorter incubation and crystallisation time is observed using a simplified RCA cleaning than the other two wet chemical cleaning methods, indicating a cleaner seed layer surface is achieved. Cross sectional transmission microscope images confirm a crystallographic transferal of information from the simplified RCA cleaned seed layer into the epi-layer. RTA for the SPC seed layer can effectively eliminate the intragrain defects in the seed layer and improve structural quality of both of the seed layer and the epi-layer. Consequently, epitaxial grown poly-Si solar cell on the RTA treated seed layer shows better solar cell efficiency, V{sub oc} and J{sub sc} than the one on the seed layer without RTA treatment.

Design and manufacturing challenges of optogenetic neural interfaces: a review

Science.gov (United States)

Goncalves, S. B.; Ribeiro, J. F.; Silva, A. F.; Costa, R. M.; Correia, J. H.

2017-08-01

Optogenetics is a relatively new technology to achieve cell-type specific neuromodulation with millisecond-scale temporal precision. Optogenetic tools are being developed to address neuroscience challenges, and to improve the knowledge about brain networks, with the ultimate aim of catalyzing new treatments for brain disorders and diseases. To reach this ambitious goal the implementation of mature and reliable engineered tools is required. The success of optogenetics relies on optical tools that can deliver light into the neural tissue. Objective/Approach: Here, the design and manufacturing approaches available to the scientific community are reviewed, and current challenges to accomplish appropriate scalable, multimodal and wireless optical devices are discussed. Significance: Overall, this review aims at presenting a helpful guidance to the engineering and design of optical microsystems for optogenetic applications.