WorldWideScience

Sample records for sapphire crystal growth

  1. A peek into the history of sapphire crystal growth

    Science.gov (United States)

    Harris, Daniel C.

    2003-09-01

    After the chemical compositions of sapphire and ruby were unraveled in the middle of the 19th century, chemists set out to grow artificial crystals of these valuable gemstones. In 1885 a dealer in Geneva began to sell ruby that is now believed to have been created by flame fusion. Gemnologists rapidly concluded that the stones were artificial, but the Geneva ruby stimulated A. V. L. Verneuil in Paris to develop a flame fusion process to produce higher quality ruby and sapphire. By 1900 there was brisk demand for ruby manufactured by Verneuil's method, even though Verneuil did not publicly announce his work until 1902 and did not publish details until 1904. The Verneuil process was used with little alteration for the next 50 years. From 1932-1953, S. K. Popov in the Soviet Union established a capability for manufacturing high quality sapphire by the Verneuil process. In the U.S., under government contract, Linde Air Products Co. implemented the Verneuil process for ruby and sapphire when European sources were cut off during World War II. These materials were essential to the war effort for jewel bearings in precision instruments. In the 1960s and 1970s, the Czochralski process was implemented by Linde and its successor, Union Carbide, to make higher crystal quality material for ruby lasers. Stimulated by a government contract for structural fibers in 1966, H. LaBelle invented edge-defined film-fed growth (EFG). The Saphikon company, which is currently owned by Saint-Gobain, evolved from this effort. Independently and simultaneously, Stepanov developed edge-defined film-fed growth in the Soviet Union. In 1967 F. Schmid and D. Viechnicki at the Army Materials Research Lab grew sapphire by the heat exchanger method (HEM). Schmid went on to establish Crystal Systems, Inc. around this technology. Rotem Industries, founded in Israel in 1969, perfected the growth of sapphire hemispheres and near-net-shape domes by gradient solidification. In the U.S., growth of near

  2. A Century of Sapphire Crystal Growth

    Science.gov (United States)

    2004-05-17

    should be aware that notwithstanding any other provision of law , no person shall be subject to a penalty for failing to comply with a collection of...and ruby were oxides of the elements aluminum and silicon.1 In 1817, J. L. Gay- Lussac found that pure aluminum oxide (also called alumina) could...thought to consist of Al2O3 and SiO2 •1817: Gay- Lussac : •1840: Rose: Found SiO2 in sapphire is from agate mortar used for grinding •1837-72: Gaudin

  3. Facet Appearance on the Lateral Face of Sapphire Single-Crystal Fibers during LHPG Growth

    Directory of Open Access Journals (Sweden)

    Liudmila D. Iskhakova

    2016-08-01

    Full Text Available Results of the study of the lateral surface of single-crystal (SC sapphire fibers grown along crystallographic directions [ 0001 ] and [ 11 2 ¯ 0 ] by the LHPG method are presented. The appearance or absence of faceting of the lateral surface of the fibers depending on the growth direction is analyzed. The crystallographic orientation of the facets is investigated. The microstructure of the samples is investigated with the help of an optical microscope and a JSM-5910LV scanning electronic microscope (JEOL. The crystallographic orientations of the facets on the SC sapphire fiber surface are determined by electron backscatter diffraction (EBSD. The seed orientation is studied by means of XRD techniques.

  4. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    KAUST Repository

    Sun, Haiding; Wu, Feng; Altahtamouni, Talal Mohammed Ahmad; Alfaraj, Nasir; Li, Kun; Detchprohm, Theeradetch; Dupuis, Russell; Li, Xiaohang

    2017-01-01

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  5. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    KAUST Repository

    Sun, Haiding

    2017-08-08

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  6. Neutron Transmission through Sapphire Crystals

    DEFF Research Database (Denmark)

    of simulations, in order to reproduce the transmission of cold neutrons through sapphire crystals. Those simulations were part of the effort of validating and improving the newly developed interface between the Monte-Carlo neutron transport code MCNP and the Monte Carlo ray-tracing code McStas....

  7. Development of Auto-Seeding System Using Image Processing Technology in the Sapphire Crystal Growth Process via the Kyropoulos Method

    Directory of Open Access Journals (Sweden)

    Churl Min Kim

    2017-04-01

    Full Text Available The Kyropoulos (Ky and Czochralski (Cz methods of crystal growth are used for large-diameter single crystals. The seeding process in these methods must induce initial crystallization by initiating contact between the seed crystals and the surface of the melted material. In the Ky and Cz methods, the seeding process lays the foundation for ingot growth during the entire growth process. When any defect occurs in this process, it is likely to spread to the entire ingot. In this paper, a vision system was constructed for auto seeding and for observing the surface of the melt in the Ky method. An algorithm was developed to detect the time when the internal convection of the melt is stabilized by observing the shape of the spoke pattern on the melt material surface. Then, the vision system and algorithm were applied to the growth furnace, and the possibility of process automation was examined for sapphire growth. To confirm that the convection of the melt was stabilized, the position of the island (i.e., the center of a spoke pattern was detected using the vision system and image processing. When the observed coordinates for the center of the island were compared with the coordinates detected from the image processing algorithm, there was an average error of 1.87 mm (based on an image with 1024 × 768 pixels.

  8. Neutron transmission of single-crystal sapphire filters

    International Nuclear Information System (INIS)

    Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.

    2005-01-01

    An additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for single-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula fits and experimental data. We discuss the use of sapphire single crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons. (author)

  9. Neutron transmission of single-crystal sapphire filters

    International Nuclear Information System (INIS)

    Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.

    2004-01-01

    A simple additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for mono-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula fits and experimental data. We discuss the use of sapphire single-crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons

  10. Neutron Transmission of Single-crystal Sapphire Filters

    Science.gov (United States)

    Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.

    2005-05-01

    An additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for single-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula and experimental data. We discuss the use of sapphire single crystal as a thermal neutron filter in terms of the optimum cystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons.

  11. Neurosurgery contact handheld probe based on sapphire shaped crystal

    Science.gov (United States)

    Shikunova, I. A.; Stryukov, D. O.; Rossolenko, S. N.; Kiselev, A. M.; Kurlov, V. N.

    2017-01-01

    A handheld contact probe based on sapphire shaped crystal is developed for intraoperative spectrally-resolved optical diagnostics, laser coagulation and aspiration of malignant brain tissue. The technology was integrated into the neurosurgical workflow for intraoperative real-time identification and removing of invasive brain cancer.

  12. The density and compositional analysis of titanium doped sapphire single crystal grown by the Czocharlski method

    Science.gov (United States)

    Kusuma, H. H.; Ibrahim, Z.; Othaman, Z.

    2018-03-01

    Titanium doped sapphire (Ti:Al2O3) crystal has attracted attention not only as beautiful gemstones, but also due to their applications as high power laser action. It is very important crystal for tunable solid state laser. Ti:Al2O3 crystals have been success grown using the Czocharlski method with automatic diameter control (ADC) system. The crystals were grown with different pull rates. The structure of the crystal was characterized with X-Ray Diffraction (XRD). The density of the crystal was measurement based on the Archimedes principle and the chemical composition of the crystal was confirmed by the Energy Dispersive X-ray (EDX) Spectroscopy. The XRD patterns of crystals are showed single main peak with a high intensity. Its shows that the samples are single crystal. The Ti:Al2O3 grown with different pull rate will affect the distribution of the concentration of dopant Ti3+ and densities on the sapphire crystals boules as well on the crystal growth process. The increment of the pull rate will increase the percentage distribution of Ti3+ and on the densities of the Ti:Al2O3 crystal boules. This may be attributed to the speed factor of the pull rate of the crystal that then caused changes in the heat flow in the furnace and then causes the homogeneities is changed of species distribution of atoms along crystal.

  13. Crystal Growth Technology

    Science.gov (United States)

    Scheel, Hans J.; Fukuda, Tsuguo

    2004-06-01

    This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics: General aspects of crystal growth technology Silicon Compound semiconductors Oxides and halides Crystal machining Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.

  14. Single-Crystal Sapphire Optical Fiber Sensor Instrumentation

    Energy Technology Data Exchange (ETDEWEB)

    Pickrell, Gary [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Scott, Brian [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Wang, Anbo [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Yu, Zhihao [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States)

    2013-12-31

    This report summarizes technical progress on the program “Single-Crystal Sapphire Optical Fiber Sensor Instrumentation,” funded by the National Energy Technology Laboratory of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. This project was completed in three phases, each with a separate focus. Phase I of the program, from October 1999 to April 2002, was devoted to development of sensing schema for use in high temperature, harsh environments. Different sensing designs were proposed and tested in the laboratory. Phase II of the program, from April 2002 to April 2009, focused on bringing the sensor technologies, which had already been successfully demonstrated in the laboratory, to a level where the sensors could be deployed in harsh industrial environments and eventually become commercially viable through a series of field tests. Also, a new sensing scheme was developed and tested with numerous advantages over all previous ones in Phase II. Phase III of the program, September 2009 to December 2013, focused on development of the new sensing scheme for field testing in conjunction with materials engineering of the improved sensor packaging lifetimes. In Phase I, three different sensing principles were studied: sapphire air-gap extrinsic Fabry-Perot sensors; intensity-based polarimetric sensors; and broadband polarimetric sensors. Black body radiation tests and corrosion tests were also performed in this phase. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. At the beginning of Phase II, in June 2004, the BPDI sensor was tested at the Wabash River coal gasifier

  15. Thermal neutron scattering kernels for sapphire and silicon single crystals

    International Nuclear Information System (INIS)

    Cantargi, F.; Granada, J.R.; Mayer, R.E.

    2015-01-01

    Highlights: • Thermal cross section libraries for sapphire and silicon single crystals were generated. • Debye model was used to represent the vibrational frequency spectra to feed the NJOY code. • Sapphire total cross section was measured at Centro Atómico Bariloche. • Cross section libraries were validated with experimental data available. - Abstract: Sapphire and silicon are materials usually employed as filters in facilities with thermal neutron beams. Due to the lack of the corresponding thermal cross section libraries for those materials, necessary in calculations performed in order to optimize beams for specific applications, here we present the generation of new thermal neutron scattering kernels for those materials. The Debye model was used in both cases to represent the vibrational frequency spectra required to feed the NJOY nuclear data processing system in order to produce the corresponding libraries in ENDF and ACE format. These libraries were validated with available experimental data, some from the literature and others obtained at the pulsed neutron source at Centro Atómico Bariloche

  16. Thermal stress resistance of ion implanted sapphire crystals

    International Nuclear Information System (INIS)

    Gurarie, V.N.; Jamieson, D.N.; Szymanski, R.; Orlov, A.V.; Williams, J.S.; Conway, M.

    1999-01-01

    Monocrystals of sapphire have been subjected to ion implantation with 86 keV Si - and 80 keV Cr - ions to doses in the range of 5x10 14 -5x10 16 cm -2 prior to thermal stress testing in a pulsed plasma. Above a certain critical dose ion implantation is shown to modify the near-surface structure of samples by introducing damage, which makes crack nucleation easier under the applied stress. The effect of ion dose on the stress resistance is investigated and the critical doses which produce a noticeable change in the stress resistance are determined. The critical dose for Si ions is shown to be much lower than that for Cr - ions. However, for doses exceeding 2x10 16 cm -2 the stress resistance parameter decreases to approximately the same value for both implants. The size of the implantation-induced crack nucleating centers and the density of the implantation-induced defects are considered to be the major factors determining the stress resistance of sapphire crystals irradiated with Si - and Cr - ions

  17. Numerical investigation of thermal and residual stress of sapphire during c-axis vertical Bridgman growth process considering the solidification history effect

    Science.gov (United States)

    Hwang, Ji Hoon; Lee, Young Cheol; Lee, Wook Jin

    2018-01-01

    Sapphire single crystals have been highlighted for epitaxial of gallium nitride films in high-power laser and light emitting diode industries. In this study, the evolution of thermally induced stress in sapphire during the vertical Bridgman crystal growth process was investigated using a finite element model that simplified the real Bridgman process. A vertical Bridgman process of cylindrical sapphire crystal with a diameter of 50 mm was considered for the model. The solidification history effect during the growth was modeled by the quite element technique. The effects of temperature gradient, seeding interface shape and seeding position on the thermal stress during the process were discussed based on the finite element analysis results.

  18. Numerical simulation of terahertz-wave propagation in photonic crystal waveguide based on sapphire shaped crystal

    International Nuclear Information System (INIS)

    Zaytsev, Kirill I; Katyba, Gleb M; Mukhina, Elena E; Kudrin, Konstantin G; Karasik, Valeriy E; Yurchenko, Stanislav O; Kurlov, Vladimir N; Shikunova, Irina A; Reshetov, Igor V

    2016-01-01

    Terahertz (THz) waveguiding in sapphire shaped single crystal has been studied using the numerical simulations. The numerical finite-difference analysis has been implemented to characterize the dispersion and loss in the photonic crystalline waveguide containing hollow cylindrical channels, which form the hexagonal lattice. Observed results demonstrate the ability to guide the THz-waves in multi-mode regime in wide frequency range with the minimal power extinction coefficient of 0.02 dB/cm at 1.45 THz. This shows the prospectives of the shaped crystals for highly-efficient THz waveguiding. (paper)

  19. Light refraction in sapphire plates with a variable angle of crystal optical axis to the surface

    International Nuclear Information System (INIS)

    Vetrov, V. N.; Ignatenkov, B. A.

    2013-01-01

    The modification of sapphire by inhomogeneous plastic deformation makes it possible to obtain plates with a variable angle of inclination of the crystal optical axis to the plate surface. The refraction of light in this plate at perpendicular and oblique incidence of a parallel beam of rays is considered. The algorithm of calculating the refractive index of extraordinary ray and the birefringence is proposed.

  20. Effect of power history on the shape and the thermal stress of a large sapphire crystal during the Kyropoulos process

    Science.gov (United States)

    Nguyen, Tran Phu; Chuang, Hsiao-Tsun; Chen, Jyh-Chen; Hu, Chieh

    2018-02-01

    In this study, the effect of the power history on the shape of a sapphire crystal and the thermal stress during the Kyropoulos process are numerically investigated. The simulation results show that the thermal stress is strongly dependent on the power history. The thermal stress distributions in the crystal for all growth stages produced with different power histories are also studied. The results show that high von Mises stress regions are found close to the seed of the crystal, the highly curved crystal surface and the crystal-melt interface. The maximum thermal stress, which occurs at the crystal-melt interface, increases significantly in value as the crystal expands at the crown. After this, there is reduction in the maximum thermal stress as the crystal lengthens. There is a remarkable enhancement in the maximum von Mises stress when the crystal-melt interface is close to the bottom of the crucible. There are two obvious peaks in the maximum Von Mises stress, at the end of the crown stage and in the final stage, when cracking defects can form. To alleviate this problem, different power histories are considered in order to optimize the process to produce the lowest thermal stress in the crystal. The optimal power history is found to produce a significant reduction in the thermal stress in the crown stage.

  1. Occurrence and elimination of in-plane misoriented crystals in AlN epilayers on sapphire via pre-treatment control

    International Nuclear Information System (INIS)

    Wang Hu; Xiong Hui; Wu Zhi-Hao; Yu Chen-Hui; Tian Yu; Dai Jiang-Nan; Fang Yan-Yan; Zhang Jian-Bao; Chen Chang-Qing

    2014-01-01

    AlN epilayers are grown directly on sapphire (0001) substrates each of which has a low temperature AlN nucleation layer. The effects of pretreatments of sapphire substrates, including exposures to NH 3 /H 2 and to H 2 only ambients at different temperatures, before the growth of AlN epilayers is investigated. In-plane misoriented crystals occur in N-polar AlN epilayers each with pretreatment in a H 2 only ambient, and are characterized by six 60°-apart peaks with splits in each peak in (101-bar 2) phi scan and two sets of hexagonal diffraction patterns taken along the [0001] zone axis in electron diffraction. These misoriented crystals can be eliminated in AlN epilayers by the pretreatment of sapphire substrates in the NH 3 /H 2 ambient. AlN epilayers by the pretreatment of sapphire substrates in the NH 3 /H 2 ambient are Al-polar. Our results show the pretreatments and the nucleation layers are responsible for the polarities of the AlN epilayers. We ascribe these results to the different strain relaxation mechanisms induced by the lattice mismatch of AlN and sapphire. (interdisciplinary physics and related areas of science and technology)

  2. Detection of solar neutrinos with a torsion balance with sapphire crystal

    Science.gov (United States)

    Cruceru, M.; Nicolescu, G.

    2018-01-01

    The solar neutrinos (antineutrinos) are detected with a dedicated torsion balance in the case when they interact coherently on stiff crystals (sapphire with high Debye temperature ∼1000K and lead with ∼100K Debye temperature). The balance consists in two equal masses of lead and sapphire, of 25g. An autocollimator coupled to this balance measures small rotation angles of the balance. The force with which neutrino flux interacts with these crystals is between 10-5 dyn and 10-8 dyn, comparable with that reported in Weber’s experiments [1]. A diurnal effect is observed for solar neutrinos due to the rotation of the Earth around its own axes. The solar neutrino flux obtained at the site of our experiment is ∼3.8*1010neutrinos/cm2*s [2]. Experimental data for neutrinos signals from this high sensitivity torsion balance are presented and commented [3].

  3. MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nakasu, Taizo; Sun, Wei-Che; Yamashita, Sotaro; Aiba, Takayuki; Taguri, Kosuke [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi 317-0056 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atsugi 243-0198 (Japan)

    2014-07-15

    ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2 -tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Tuning the sapphire EFG process to the growth of Al2O3/YAG/ZrO2:Y eutectic

    Science.gov (United States)

    Carroz, L.; Duffar, T.

    2018-05-01

    In this work, a model is proposed, in order to analytically study the working point of the Edge defined Film-fed Growth (EFG) pulling of crystal plates. The model takes into account the heat equilibrium at the interface and the pressure equilibrium across the meniscus. It is validated on an industrial device dedicated to the pulling of sapphire ribbons. Then, the model is applied to pulling ceramic alloy plates, of the ternary eutectic Al2O3/YAG/ZrO2:Y. This allowed understanding the experimental difficulties of pulling this new material and suggested improvements of the control software. From these results, pulling net shaped ceramic alloy plates was successful in the same industrial equipment as used for sapphire.

  5. Response of Seven Crystallographic Orientations of Sapphire Crystals to Shock Stresses of 16 to 86 GPa

    OpenAIRE

    Kanel, G. I.; Nellis, W. J.; Savinykh, A. S.; Razorenov, S. V.; Rajendran, A. M.

    2009-01-01

    Shock-wave profiles of sapphire (single-crystal Al2O3) with seven crystallographic orientations were measured with time-resolved VISAR interferometry at shock stresses in the range 16 to 86 GPa. Shock propagation was normal to the surface of each cut. The angle between the c-axis of the hexagonal crystal structure and the direction of shock propagation varied from 0 for c-cut up to 90 degrees for m-cut in the basal plane. Based on published shock-induced transparencies, shock-induced optical ...

  6. Origin for the shape of Au small crystals formed inside sapphire by ion implantation

    International Nuclear Information System (INIS)

    Ohkubo, M.; Hioki, T.

    1989-01-01

    In ion-implanted oxides, precipitation is usually formed except the case of forming solid solution. The precipitation comprises the metallic particles of implanted atoms, the oxide of implanted atoms, the metal of matrix elements, the compound of implanted atoms and matrix and so on. In particular, the metallic particles of implanted atoms are frequently faceted. From the facets, the equilibrium shape of crystals can be imagined. The equilibrium shape is determined so that the surface free energy is to be minimized. However, the shape of the metallic particles precipitated inside oxides should not be such equilibrium shape because they come in contact with foreign crystals. As the result, in the precipitation phenomena induced by ion implantation, the crystal structures of precipitated particles and substrates, the crystallographic relation between two crystals, interfacial energy and so on must be taken in consideration. In this paper, the report is made on the shape of the metallic gold particles formed inside sapphires by ion implantation that it was caused by only the crystal habit of sapphires regardless of the above-mentioned complexity. (K.I.)

  7. Growth of vertically oriented InN nanorods from In-rich conditions on unintentionally patterned sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Terziyska, Penka T., E-mail: pterziy1@lakeheadu.ca [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); Butcher, Kenneth Scott A. [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada); Rafailov, Peter [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Alexandrov, Dimiter [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada)

    2015-10-30

    Highlights: • Vertical InN nanorods are grown on selective areas of sapphire substrates. • In metal droplets nucleate on the sharp needle apexes on the selective areas. • The preferred orientation and the growth direction of the nanorods are (0 0 0 1). • The nanorods grow from the supersaturated indium melt on their tops. - Abstract: Vertically oriented InN nanorods were grown on selective areas of unintentionally patterned c-oriented sapphire substrates exhibiting sharp needles that preferentially accommodate In-metal liquid droplets, using Migration Enhanced Afterglow (MEAglow) growth technique. We point out that the formation of AlN needles on selected areas can be reproduced intentionally by over-nitridation of unmasked areas of sapphire substrates. The liquid indium droplets serve as a self-catalyst and the nanorods grow from the supersaturated indium melt in the droplet in a vertical direction. X-ray diffraction measurements indicate the presence of hexagonal InN only, with preferred orientation along (0 0 0 1) crystal axis, and very good crystalline quality. The room temperature Raman spectrum shows the presence of the A{sub 1}(TO), E{sub 2}(high) and A{sub 1}(LO) phonon modes of the hexagonal InN.

  8. Growth of dopamine crystals

    Energy Technology Data Exchange (ETDEWEB)

    Patil, Vidya, E-mail: vidya.patil@ruparel.edu; Patki, Mugdha, E-mail: mugdha.patki@ruparel.edu [D. G. Ruparel College, Senapati Bapat Marg, Mahim, Mumbai – 400 016 (India)

    2016-05-06

    Many nonlinear optical (NLO) crystals have been identified as potential candidates in optical and electro-optical devices. Use of NLO organic crystals is expected in photonic applications. Hence organic nonlinear optical materials have been intensely investigated due to their potentially high nonlinearities, and rapid response in electro-optic effect compared to inorganic NLO materials. There are many methods to grow organic crystals such as vapor growth method, melt growth method and solution growth method. Out of these methods, solution growth method is useful in providing constraint free crystal. Single crystals of Dopamine have been grown by evaporating the solvents from aqueous solution. Crystals obtained were of the size of orders of mm. The crystal structure of dopamine was determined using XRD technique. Images of crystals were obtained using FEG SEM Quanta Series under high vacuum and low KV.

  9. Characterization of single crystal uranium-oxide thin films grown via reactive-gas magnetron sputtering on yttria-stabilized zirconia and sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Strehle, Melissa M.; Heuser, Brent J., E-mail: bheuser@illinois.edu; Elbakhshwan, Mohamed S.; Han Xiaochun; Gennardo, David J.; Pappas, Harrison K.; Ju, Hyunsu

    2012-06-30

    The microstructure and valence states of three single crystal thin film systems, UO{sub 2} on (11{sup Macron }02) r-plane sapphire, UO{sub 2} on (001) yttria-stabilized zirconia, and U{sub 3}O{sub 8} on (11{sup Macron }02) r-plane sapphire, grown via reactive-gas magnetron sputtering are analyzed primarily with X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and ultraviolet photoelectron spectroscopy (UPS). XRD analysis indicates the growth of single crystal domains with varying degrees of mosaicity. XPS and UPS analyses yield U-4f, U-5f, O-1s, and O-2p electron binding energies consistent with reported bulk values. A change from p-type to n-type semiconductor behavior induced by preferential sputtering of oxygen during depth profile analysis was observed with both XPS and UPS. Trivalent cation impurities (Nd and Al) in UO{sub 2} lower the Fermi level, shifting the XPS spectral weight. This observation is consistent with hole-doping of a Mott-Hubbard insulator. The uranium oxide-(11{sup Macron }02) sapphire system is unstable with respect to Al interdiffusion across the film-substrate interface at elevated temperature. - Highlights: Black-Right-Pointing-Pointer Single crystal uranium-oxides grown on sapphire and yttria-stabilized zirconia. Black-Right-Pointing-Pointer Anion and cation valence states studied by photoelectron emission spectroscopy. Black-Right-Pointing-Pointer Trivalent Nd and Al impurities lower the Fermi level. Black-Right-Pointing-Pointer Uranium-oxide films on sapphire found to be unstable with respect to Al interdiffusion.

  10. Giant secondary grain growth in Cu films on sapphire

    Directory of Open Access Journals (Sweden)

    David L. Miller

    2013-08-01

    Full Text Available Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial growth at high temperature using slow deposition in ultrahigh vacuum conditions. Here we describe a different approach that is both simpler to implement and produces superior results: sputter deposition at modest temperatures followed by annealing to induce secondary grain growth. We show that polycrystalline as-deposited Cu on α-Al2O3(0001 can be transformed into Cu(111 with centimeter-sized grains. Employing optical microscopy, x-ray diffraction, and electron backscatter diffraction to characterize the films before and after annealing, we find a particular as-deposited grain structure that promotes the growth of giant grains upon annealing. To demonstrate one potential application of such films, we grow graphene by chemical vapor deposition on wafers of annealed Cu and obtain epitaxial graphene grains of 0.2 mm diameter.

  11. Efficient continuous-wave and passively Q-switched pulse laser operations in a diffusion-bonded sapphire/Er:Yb:YAl3(BO3)4/sapphire composite crystal around 1.55 μm.

    Science.gov (United States)

    Chen, Yujin; Lin, Yanfu; Huang, Jianhua; Gong, Xinghong; Luo, Zundu; Huang, Yidong

    2018-01-08

    A composite crystal consisting of a 1.5-mm-thick Er:Yb:YAl 3 (BO 3 ) 4 crystal between two 1.2-mm-thick sapphire crystals was fabricated by the thermal diffusion bonding technique. Compared with a lone Er:Yb:YAl 3 (BO 3 ) 4 crystal measured under the identical experimental conditions, higher laser performances were demonstrated in the sapphire/Er:Yb:YAl 3 (BO 3 ) 4 /sapphire composite crystal due to the reduction of the thermal effects. End-pumped by a 976 nm laser diode in a hemispherical cavity, a 1.55 μm continuous-wave laser with a maximum output power of 1.75 W and a slope efficiency of 36% was obtained in the composite crystal when the incident pump power was 6.54 W. Passively Q-switched by a Co 2+ :MgAl 2 O 4 crystal, a 1.52 μm pulse laser with energy of 10 μJ and repetition frequency of 105 kHz was also realized in the composite crystal. Pulse width was 315 ns. The results show that the sapphire/Er:Yb:YAl 3 (BO 3 ) 4 /sapphire composite crystal is an excellent active element for 1.55 μm laser.

  12. Theoretical studies on lattice-oriented growth of single-walled carbon nanotubes on sapphire

    Science.gov (United States)

    Li, Zhengwei; Meng, Xianhong; Xiao, Jianliang

    2017-09-01

    Due to their excellent mechanical and electrical properties, single-walled carbon nanotubes (SWNTs) can find broad applications in many areas, such as field-effect transistors, logic circuits, sensors and flexible electronics. High-density, horizontally aligned arrays of SWNTs are essential for high performance electronics. Many experimental studies have demonstrated that chemical vapor deposition growth of nanotubes on crystalline substrates such as sapphire offers a promising route to achieve such dense, perfectly aligned arrays. In this work, a theoretical study is performed to quantitatively understand the van der Waals interactions between SWNTs and sapphire substrates. The energetically preferred alignment directions of SWNTs on A-, R- and M-planes and the random alignment on the C-plane predicted by this study are all in good agreement with experiments. It is also shown that smaller SWNTs have better alignment than larger SWNTs due to their stronger interaction with sapphire substrate. The strong vdW interactions along preferred alignment directions can be intuitively explained by the nanoscale ‘grooves’ formed by atomic lattice structures on the surface of sapphire. This study provides important insights to the controlled growth of nanotubes and potentially other nanomaterials.

  13. Intracavity doubling of CW Ti:sapphire laser to 392.5 nm using BiBO-crystal

    DEFF Research Database (Denmark)

    Mortensen, Jesper Liltorp; Thorhauge, Morten; Tidemand-Lichtenberg, Peter

    2005-01-01

    In this work we present results obtained for intra-cavity frequency-doubling of a 785 nm CW Ti:sapphire laser utilising BiBO as the non-linear crystal. Intracavity doubling offers several advantages compared to extra-cavity doubling, such as no need to couple to an external resonance cavity...

  14. Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    Kumagai, Yoshinao; Adachi, Hirokazu; Otake, Aya; Higashikawa, Yoshihiro; Togashi, Rie; Murakami, Hisashi; Koukitu, Akinori

    2010-01-01

    The temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy (HVPE) was investigated. N-polarity single-crystal InN layers were successfully grown at temperatures ranging from 400 to 500 C. The a and c lattice constants of InN layers grown at 450 C or below were slightly larger than those of InN layers grown above 450 C due to oxygen incorporation that also increased the carrier concentration. The optical absorption edge of the InN layer decreased from above 2.0 to 0.76 eV when the growth temperature was increased from 450 to 500 C. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Growth optimization for thick crack-free GaN layers on sapphire with HVPE

    Energy Technology Data Exchange (ETDEWEB)

    Richter, E.; Hennig, Ch.; Kissel, H.; Sonia, G.; Zeimer, U.; Weyers, M. [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, 12489 Berlin (Germany)

    2005-05-01

    Conditions for optimized growth of thick GaN layers with crack-free surfaces by HVPE are reported. It was found that a 1:1 mixture of H{sub 2}/N{sub 2} as carrier gas leads to the lowest density of cracks in the surface. Crack formation also depends on the properties of the GaN/sapphire templates used. Best results have been obtained for 5 {mu}m thick GaN/sapphire templates grown by MOVPE with medium compressive strain {epsilon}{sub zz} of about 0.05%. But there is no simple dependence of the crack formation on the strain status of the starting layer indicating that the HVPE growth of GaN can itself introduce strong tensile strain. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Growth of cubic InN on r-plane sapphire

    International Nuclear Information System (INIS)

    Cimalla, V.; Pezoldt, J.; Ecke, G.; Kosiba, R.; Ambacher, O.; Spiess, L.; Teichert, G.; Lu, H.; Schaff, W.J.

    2003-01-01

    InN has been grown directly on r-plane sapphire substrates by plasma-enhanced molecular-beam epitaxy. X-ray diffraction investigations have shown that the InN layers consist of a predominant zinc blende (cubic) structure along with a fraction of the wurtzite (hexagonal) phase which content increases with proceeding growth. The lattice constant for zinc blende InN was found to be a=4.986 A. For this unusual growth of a metastable cubic phase on a noncubic substrate an epitaxial relationship was proposed where the metastable zinc blende phase grows directly on the r-plane sapphire while the wurtzite phase arises as the special case of twinning in the cubic structure

  17. Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire.

    Science.gov (United States)

    Mezzadri, Francesco; Calestani, Gianluca; Boschi, Francesco; Delmonte, Davide; Bosi, Matteo; Fornari, Roberto

    2016-11-21

    The crystal structure and ferroelectric properties of ε-Ga 2 O 3 deposited by low-temperature MOCVD on (0001)-sapphire were investigated by single-crystal X-ray diffraction and the dynamic hysteresis measurement technique. A thorough investigation of this relatively unknown polymorph of Ga 2 O 3 showed that it is composed of layers of both octahedrally and tetrahedrally coordinated Ga 3+ sites, which appear to be occupied with a 66% probability. The refinement of the crystal structure in the noncentrosymmetric space group P6 3 mc pointed out the presence of uncompensated electrical dipoles suggesting ferroelectric properties, which were finally demonstrated by independent measurements of the ferroelectric hysteresis. A clear epitaxial relation is observed with respect to the c-oriented sapphire substrate, with the Ga 2 O 3 [10-10] direction being parallel to the Al 2 O 3 direction [11-20], yielding a lattice mismatch of about 4.1%.

  18. Growth and characterization of polar and nonpolar ZnO film grown on sapphire substrates by using atomic layer deposition

    International Nuclear Information System (INIS)

    Kim, Ki-Wook; Son, Hyo-Soo; Choi, Nak-Jung; Kim, Jihoon; Lee, Sung-Nam

    2013-01-01

    We investigated the electrical and the optical properties of polar and nonpolar ZnO films grown on sapphire substrates with different crystallographic planes. High resolution X-ray results revealed that polar c-plane (0001), nonpolar m-plane (10-10) and a-plane (11-20) ZnO thin films were grown on c-plane, m- and r-sapphire substrates by atomic layer deposition, respectively. Compared with the c-plane ZnO film, nonpolar m-plane and a-plane ZnO films showed smaller surface roughness and anisotropic surface structures. Regardless of ZnO crystal planes, room temperature photoluminescence spectra represented two emissions which consisted of the near bandedge (∼ 380 nm) and the deep level emission (∼ 500 nm). The a-plane ZnO films represented better optical and electrical properties than c-plane ZnO, while m-plane ZnO films exhibited poorer optical and electrical properties than c-plane ZnO. - Highlights: • Growth and characterization of a-, c- and m-plane ZnO film by atomic layer deposition. • The a-plane ZnO represented better optical and electrical properties than c-plane ZnO. • The m-plane ZnO exhibited poorer optical and electrical properties than c-plane ZnO

  19. Quadrupolar interactions in non-cubic crystal and related extra heat capacities. Possible effects on a sapphire bolometer

    Energy Technology Data Exchange (ETDEWEB)

    Bassou, M. [Tunis Univ. (Tunisia)]|[CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Rotter, M. [Karlova Univ., Prague (Czech Republic)]|[CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Bernier, M. [CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France); Chapellier, M. [CEA/DSM/DRECAM/SPEC, Gif-wur-Yvette (France)

    1996-02-11

    It is shown that in a non-cubic crystal, the extra heat capacity due to quadrupolar interaction of nuclear spins >1/2 could be much bigger than the phonon heat capacity when the temperature decreases. The possible coupling between quadrupolar and phonon heat reservoir via paramagnetic impurities is stressed. A NMR experiment done on sapphire is presented with an evaluation of the coupling between the two reservoirs and its consequence on the performance of the bolometer. (orig.).

  20. Quadrupolar interactions in non-cubic crystal and related extra heat capacities. Possible effects on a sapphire bolometer

    International Nuclear Information System (INIS)

    Bassou, M.; Rotter, M.; Bernier, M.; Chapellier, M.

    1996-01-01

    It is shown that in a non-cubic crystal, the extra heat capacity due to quadrupolar interaction of nuclear spins >1/2 could be much bigger than the phonon heat capacity when the temperature decreases. The possible coupling between quadrupolar and phonon heat reservoir via paramagnetic impurities is stressed. A NMR experiment done on sapphire is presented with an evaluation of the coupling between the two reservoirs and its consequence on the performance of the bolometer. (orig.)

  1. Single-crystalline AlN growth on sapphire using physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cardenas-Valencia, Andres M., E-mail: andres.cardenas@sri.co [SRI International (United States); Onishi, Shinzo; Rossie, Benjamin [SRI International (United States)

    2011-02-07

    A novel technique for growing single crystalline aluminum nitride (AlN) films is presented. The novelty of the technique, specifically, comes from the use of an innovative physical vapor deposition magnetron sputtering tool, which embeds magnets into the target material. A relatively high deposition rates is achieved ({approx}0.2 {mu}m/min), at temperatures between 860 and 940 {sup o}C. The AlN, grown onto sapphire, is single-crystalline as evidenced by observation using transmission electron microscopy. Tool configuration and growth conditions are discussed, as well as a first set of other analytical results, namely, x-ray diffraction and ultraviolet-visible transmission spectrophotometry.

  2. Growth and characterization of β-Ga2O3 crystals

    Science.gov (United States)

    Nikolaev, V. I.; Maslov, V.; Stepanov, S. I.; Pechnikov, A. I.; Krymov, V.; Nikitina, I. P.; Guzilova, L. I.; Bougrov, V. E.; Romanov, A. E.

    2017-01-01

    Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8 mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of 46″. Young's modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained.

  3. Crystal growth and doping

    International Nuclear Information System (INIS)

    Paorici, C.

    1980-01-01

    Section 1 contains a self-consistent review of the basic growth features. After a short introduction concerning the driving force acting in a crystallization process, three main topics are broadly discussed: (i) interface kinetics; (ii) transport kinetics, and (iii) growth stability conditions. On point (i), after definition of the nature of interface, using Temkin's model, the growth mechanisms predicted by Burton, Cabrera and Frank (BCF) and bidimensional nucleation theories are fully developed. On points (ii) and (iii), the differential equations of the constitutional (concentration) and thermal fields are presented and discussed in terms of relevant approximations, suitable boundary conditions and limit values expected in order to have growth stability. Section 2 reports various experimental procedures for growing bulk crystals from the melt, from solutions and from the vapour phase. The basic concepts of Section 1 are amply employed for a critical discussion of possibilities, advantages and drawbacks of the methods described. Along the same lines, in Section 3 the principal epitaxial deposition procedures are highlighted. Section 4 contains a brief account of doping and of stoichiometry-defect control procedures. There is a long, carefully chosen list of bibliographical references. (author)

  4. Hopper Growth of Salt Crystals.

    Science.gov (United States)

    Desarnaud, Julie; Derluyn, Hannelore; Carmeliet, Jan; Bonn, Daniel; Shahidzadeh, Noushine

    2018-06-07

    The growth of hopper crystals is observed for many substances, but the mechanism of their formation remains ill understood. Here we investigate their growth by performing evaporation experiments on small volumes of salt solutions. We show that sodium chloride crystals that grow very fast from a highly supersaturated solution form a peculiar form of hopper crystal consisting of a series of connected miniature versions of the original cubic crystal. The transition between cubic and such hopper growth happens at a well-defined supersaturation where the growth rate of the cubic crystal reaches a maximum (∼6.5 ± 1.8 μm/s). Above this threshold, the growth rate varies as the third power of supersaturation, showing that a new mechanism, controlled by the maximum speed of surface integration of new molecules, induces the hopper growth of cubic crystals in cascade.

  5. Springer Handbook of Crystal Growth

    CERN Document Server

    Dhanaraj, Govindhan; Prasad, Vishwanath; Dudley, Michael

    2010-01-01

    Over the years, many successful attempts have been made to describe the art and science of crystal growth. Most modern advances in semiconductor and optical devices would not have been possible without the development of many elemental, binary, ternary, and other compound crystals of varying properties and large sizes. The objective of the Springer Handbook of Crystal Growth is to present state-of-the-art knowledge of both bulk and thin-film crystal growth. The goal is to make readers understand the basics of the commonly employed growth processes, materials produced, and defects generated. Almost 100 leading scientists, researchers, and engineers from 22 different countries from academia and industry have been selected to write chapters on the topics of their expertise. They have written 52 chapters on the fundamentals of bulk crystal growth from the melt, solution, and vapor, epitaxial growth, modeling of growth processes and defects, techniques of defect characterization as well as some contemporary specia...

  6. Antiphase inversion domains in lithium cobaltite thin films deposited on single-crystal sapphire substrates

    International Nuclear Information System (INIS)

    Zheng, S.J.; Fisher, C.A.J.; Hitosugi, T.; Kumatani, A.; Shiraki, S.; Ikuhara, Y.H.; Kuwabara, A.; Moriwake, H.; Oki, H.; Ikuhara, Y.

    2013-01-01

    Antiphase inversion domains in LiCoO 2 thin films prepared by pulsed laser deposition on sapphire single-crystal substrates are analyzed using a combination of (scanning) transmission electron microscopy and first-principles calculations. Domains form epitaxially on the substrates with orientation relationships of [112 ¯ 0] LiCoO 2 (0001) LiCoO 2 //[11 ¯ 00] α-Al 2 O 3 (0001) α-Al 2 O 3 and [1 ¯ 1 ¯ 20] LiCoO 2 (0001) LiCoO 2 //[11 ¯ 00] α-Al 2 O 3 (0001) α-Al 2 O 3 . In addition, substrate/film interfaces with the above orientation relationships always have the same stacking sequence of Al–O–Co–O–Li–O. This is confirmed to be the most energetically stable stacking arrangement according to first-principles calculations. Individual domains form as a result of steps one (0 0 0 1) O–Al–O spacing in height on the otherwise flat substrate surface. Because the orientation of adjacent (0 0 0 1) AlO 6 octahedra in Al 2 O 3 are rotated by 180°, while LiO 6 and CoO 6 octahedra in LiCoO 2 are all aligned in the same direction, substrate steps produce LiCoO 2 domains rotated 180° relative to their neighbors. The similar size of oxygen octahedra in the two materials also means that the step height is close to the layer spacing in LiCoO 2 , so that (0 0 0 1) Li and Co layers of adjacent domains are shifted by one layer relative to each other at each domain boundary, aligning Li layers with Co layers across the boundary. The combination of these two effects generates antiphase inversion domains. The domain boundaries effectively sever Li-ion diffusion pathways in the (0 0 0 1) planes between domains and thus are expected to have a detrimental effect on Li-ion conductivity

  7. Size characterisation of noble-metal nano-crystals formed in sapphire by ion irradiation and subsequent thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Mota-Santiago, Pablo-Ernesto [Instituto de Fisica, Universidad Nacional Autonoma de Mexico A.P. 20-364 01000 Mexico D.F. (Mexico); Crespo-Sosa, Alejandro, E-mail: crespo@fisica.unam.mx [Instituto de Fisica, Universidad Nacional Autonoma de Mexico A.P. 20-364 01000 Mexico D.F. (Mexico); Jimenez-Hernandez, Jose-Luis; Silva-Pereyra, Hector-Gabriel; Reyes-Esqueda, Jorge-Alejandro; Oliver, Alicia [Instituto de Fisica, Universidad Nacional Autonoma de Mexico A.P. 20-364 01000 Mexico D.F. (Mexico)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer Systematic study on the formation of Ag and Au nano-particles in Al{sub 2}O{sub 3}. Black-Right-Pointing-Pointer Annealing in a reducing atmosphere, below the metal melting point is more suitable. Black-Right-Pointing-Pointer Au nano-particles grow up to 15 nm and Ag nano-particles up to 45 nm in radius. Black-Right-Pointing-Pointer Ostwald ripening is the mechanism responsible for the formation of large nanoparticles. Black-Right-Pointing-Pointer Optical properties of metallic nano-particles in Al{sub 2}O{sub 3} can be related to their size. - Abstract: Metallic nano-particles embedded in transparent dielectrics are very important for new technological applications because of their unique optical properties. These properties depend strongly on the size and shape of the nano-particles. In order to achieve the synthesis of metallic nano-particles it has been used the technique of ion implantation. This is a very common technique because it allows the control of the depth and concentration of the metallic ions inside the sample, limited mostly by straggling, without introducing other contaminant agents. The purpose of this work was to measure the size of the nano-particles grown under different conditions in Sapphire and its size evolution during the growth process. To achieve this goal, {alpha}-Al{sub 2}O{sub 3} single crystals were implanted with Ag or Au ions at room temperature with different fluences (from 2 Multiplication-Sign 10{sup 16} ions/cm{sup 2} to 8 Multiplication-Sign 10{sup 16} ions/cm{sup 2}). Afterwards, the samples were annealed at different temperatures (from 600 Degree-Sign C to 1100 Degree-Sign C) in oxidising, reducing, Ar or N{sub 2} atmospheres. We measured the ion depth profile by Rutherford Backscattering Spectroscopy (RBS) and the nano-crystals size distribution by using two methods, the surface plasmon resonance in the optical extinction spectrum and the Transmission Electron Microscopy (TEM).

  8. Molecular mechanisms of crystal growth

    International Nuclear Information System (INIS)

    Pina, C. M.

    2000-01-01

    In this paper I present an example of the research that the Mineral Surface Group of the Munster University is conducting in the field of Crystal Growth. Atomic Force Microscopy (Am) in situ observations of different barite (BaSO4) faces growing from aqueous solutions, in combination with computer simulations of the surface attachment of growth units allows us to test crystal growth models. Our results demonstrate the strong structural control that a crystal can exert on its own growth, revealing also the limitation of the classical crystal growth theories (two dimensional nucleation and spiral growth models) in providing a complete explanation for the growth behaviour at a molecular scale. (Author) 6 refs

  9. Heteroepitaxial growth of CuInS2 thin films on sapphire by radio frequency reactive sputtering

    International Nuclear Information System (INIS)

    He, Y.B.; Kriegseis, W.; Meyer, B.K.; Polity, A.; Serafin, M.

    2003-01-01

    Direct heteroepitaxial growth of uniform stoichiometric CuInS 2 (CIS) thin films on sapphire (0001) substrates has been achieved by radio frequency reactive sputtering. X-ray ω-2θ scans reveal that the sputtered layers grow in a (112) orientation with a chalcopyrite structure. A rocking curve full width at half maximum of about 0.05 deg. (180 arc sec) for the (112) peak demonstrates a nearly perfect out-of-plane arrangement of CIS (112) parallel sapphire (0001). X-ray diffraction Phi scans further illustrate an excellent in-plane ordering of CIS [1-bar10] parallel sapphire (101-bar0). The sputtered thin CIS epilayers had a smooth surface with a typical root-mean-square roughness of about 3.3 nm as evaluated by atomic force microscopy. The epitaxial growth of tetragonal CIS on hexagonal sapphire provides evidence that heteroepitaxial growth may be realized between structures of different symmetry, such as films of cubic or tetragonal structures on hexagonal substrates or vice versa

  10. Protein Crystal Growth

    Science.gov (United States)

    2003-01-01

    In order to rapidly and efficiently grow crystals, tools were needed to automatically identify and analyze the growing process of protein crystals. To meet this need, Diversified Scientific, Inc. (DSI), with the support of a Small Business Innovation Research (SBIR) contract from NASA s Marshall Space Flight Center, developed CrystalScore(trademark), the first automated image acquisition, analysis, and archiving system designed specifically for the macromolecular crystal growing community. It offers automated hardware control, image and data archiving, image processing, a searchable database, and surface plotting of experimental data. CrystalScore is currently being used by numerous pharmaceutical companies and academic and nonprofit research centers. DSI, located in Birmingham, Alabama, was awarded the patent Method for acquiring, storing, and analyzing crystal images on March 4, 2003. Another DSI product made possible by Marshall SBIR funding is VaporPro(trademark), a unique, comprehensive system that allows for the automated control of vapor diffusion for crystallization experiments.

  11. The effect of a slight mis-orientation angle of c-plane sapphire substrate on surface and crystal quality of MOCVD grown GaN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Seong-Woo; Suzuki, Toshimasa [Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Saitama, 345-8501 (Japan); Aida, Hideo [NAMIKI Precision Jewel Co. Ltd., 3-8-22 Shinden, Adachi-ku, Tokyo, 123-8511 (Japan)

    2004-09-01

    The effect of a slight mis-orientation of c-plane sapphire substrate on the surface morphology and crystal quality of GaN thin films grown by MOCVD has been investigated. The mis-orientation angle of vicinal c-plane sapphire substrate was changed within the range of 0.00(zero)-1.00(one) degree, and the experimental results were compared with those on just angle (zero degree) c-plane sapphire substrate. The surface morphology and crystal quality were found to be very sensitive to mis-orientation angle. Consequently, the mis-orientation angle was optimized to be 0.15 . (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Student Augmentation for Crystal Growth Research

    National Research Council Canada - National Science Library

    Prasad, V

    1999-01-01

    ... intelligent modeling, design and control of crystal growth processes. One doctoral student worked on integrating the radiation heat transfer model into MASTRAPP, the crystal growth model developed by the Consortium for Crystal Growth Research...

  13. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2005-11-01

    This report summarizes technical progress April-September 2005 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Due to the difficulties described on the last report, field testing of the BPDI system has not continued to date. However, we have developed an alternative high temperature sensing solution, which is described in this report. The sensing system will be installed and tested at TECO's Polk Power Station. Following a site visit in June 2005, our efforts have been focused on preparing for that field test, including he design of the sensor mechanical packaging, sensor electronics, the data transfer module, and the necessary software codes to accommodate this application.. We are currently ready to start sensor fabrication.

  14. High performance sapphire windows

    Science.gov (United States)

    Bates, Stephen C.; Liou, Larry

    1993-02-01

    High-quality, wide-aperture optical access is usually required for the advanced laser diagnostics that can now make a wide variety of non-intrusive measurements of combustion processes. Specially processed and mounted sapphire windows are proposed to provide this optical access to extreme environment. Through surface treatments and proper thermal stress design, single crystal sapphire can be a mechanically equivalent replacement for high strength steel. A prototype sapphire window and mounting system have been developed in a successful NASA SBIR Phase 1 project. A large and reliable increase in sapphire design strength (as much as 10x) has been achieved, and the initial specifications necessary for these gains have been defined. Failure testing of small windows has conclusively demonstrated the increased sapphire strength, indicating that a nearly flawless surface polish is the primary cause of strengthening, while an unusual mounting arrangement also significantly contributes to a larger effective strength. Phase 2 work will complete specification and demonstration of these windows, and will fabricate a set for use at NASA. The enhanced capabilities of these high performance sapphire windows will lead to many diagnostic capabilities not previously possible, as well as new applications for sapphire.

  15. Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates

    International Nuclear Information System (INIS)

    Okada, Narihito; Tadatomo, Kazuyuki

    2012-01-01

    Nonpolar and semipolar GaN layers with markedly improved crystalline quality can be obtained by selective-area growth from the sapphire sidewalls of patterned sapphire substrates (PSSs). In this paper, we review the crystalline qualities of GaN layers grown on PSSs and their growth mechanism. We grew semipolar {1 1 −2 2} and {1 0 −1 1} GaN layers on r- and n-PSSs. The crystalline qualities of the GaN layers grown on the PSSs were higher than those of GaN layers grown directly on heteroepitaxial substrates. To reveal the growth mechanism of GaN layers grown on PSSs, we also grew various nonpolar and semipolar GaN layers such as m-GaN on a-PSS, {1 1 −2 2} GaN on r-PSS, {1 0 − 1  1} GaN on n-PSS, m-GaN on c-PSS and a-GaN on m-PSS. It was found that the nucleation of GaN on the c-plane-like sapphire sidewall results in selective growth from the sapphire sidewall, and nonpolar or semipolar GaN can be obtained. Finally, we demonstrated a light-emitting diode fabricated on a {1 1 −2 2} GaN layer grown on an r-PSS. (paper)

  16. Ultraviolet laser crystallized ZnO:Al films on sapphire with high Hall mobility for simultaneous enhancement of conductivity and transparency

    International Nuclear Information System (INIS)

    Nian, Qiong; Zhang, Martin Y.; Schwartz, Bradley D.; Cheng, Gary J.

    2014-01-01

    One of the most challenging issues in transparent conductive oxides (TCOs) is to improve their conductivity without compromising transparency. High conductivity in TCO films often comes from a high carrier concentration, which is detrimental to transparency due to free carrier absorption. Here we show that UV laser crystallization (UVLC) of aluminum-doped ZnO (AZO) films prepared by pulsed laser deposition on sapphire results in much higher Hall mobility, allowing relaxation of the constraints of the conductivity/transparency trade-off. X-ray diffraction patterns and morphological characterizations show grain growth and crystallinity enhancement during UVLC, resulting in less film internal imperfections. Optoelectronic measurements show that UVLC dramatically improves the electron mobility, while the carrier concentration decreases which in turn simultaneously increases conductivity and transparency. AZO films under optimized UVLC achieve the highest electron mobility of 79 cm 2 /V s at a low carrier concentration of 7.9 × 10 +19  cm −3 . This is realized by a laser crystallization induced decrease of both grain boundary density and electron trap density at grain boundaries. The infrared (IR) to mid-IR range transmittance spectrum shows UVLC significantly enhances the AZO film transparency without compromising conductivity.

  17. Optical transmittance investigation of 1-keV ion-irradiated sapphire crystals as potential VUV to NIR window materials of fusion reactors

    Directory of Open Access Journals (Sweden)

    Keisuke Iwano

    2016-10-01

    Full Text Available We investigate the optical transmittances of ion-irradiated sapphire crystals as potential vacuum ultraviolet (VUV to near-infrared (NIR window materials of fusion reactors. Under potential conditions in fusion reactors, sapphire crystals are irradiated with hydrogen (H, deuterium (D, and helium (He ions with 1-keV energy and ∼ 1020-m-2 s-1 flux. Ion irradiation decreases the transmittances from 140 to 260 nm but hardly affects the transmittances from 300 to 1500 nm. H-ion and D-ion irradiation causes optical absorptions near 210 and 260 nm associated with an F-center and an F+-center, respectively. These F-type centers are classified as Schottky defects that can be removed through annealing above 1000 K. In contrast, He-ion irradiation does not cause optical absorptions above 200 nm because He-ions cannot be incorporated in the crystal lattice due to the large ionic radius of He-ions. Moreover, the significant decrease in transmittance of the ion-irradiated sapphire crystals from 140 to 180 nm is related to the light scattering on the crystal surface. Similar to diamond polishing, ion irradiation modifies the crystal surface thereby affecting the optical properties especially at shorter wavelengths. Although the transmittances in the VUV wavelengths decrease after ion irradiation, the transmittances can be improved through annealing above 1000 K. With an optical transmittance in the VUV region that can recover through simple annealing and with a high transparency from the ultraviolet (UV to the NIR region, sapphire crystals can therefore be used as good optical windows inside modern fusion power reactors in terms of light particle loadings of hydrogen isotopes and helium.

  18. Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Nakasu, T.; Yamashita, S.; Aiba, T.; Hattori, S.; Sun, W.; Taguri, K.; Kazami, F.; Kobayashi, M.

    2014-01-01

    The electrooptic effect in ZnTe has recently attracted research attention, and various device structures using ZnTe have been explored. For application to practical terahertz wave detector devices based on ZnTe thin films, sapphire substrates are preferred because they enable the optical path alignment to be simplified. ZnTe/sapphire heterostructures were focused upon, and ZnTe epilayers were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. Epitaxial relationships between the ZnTe thin films and the sapphire substrates with their various orientations were investigated using an X-ray diffraction pole figure method. (0001) c-plane, (1-102) r-plane, (1-100) m-plane, and (11-20) a-plane oriented sapphire substrates were used in this study. The epitaxial relationship between ZnTe and c-plane sapphire was found to be (111) ZnTe//(0001) sapphire with an in-plane orientation relationship of [−211] ZnTe//[1-100] sapphire. It was found that the (211)-plane ZnTe layer was grown on the m-plane of the sapphire substrates, and the (100)-plane ZnTe layer was grown on the r-plane sapphire. When the sapphire substrates were inclined from the c-plane towards the m-axis direction, the orientation of the ZnTe thin films was then tilted from the (111)-plane to the (211)-plane. The c-plane of the sapphire substrates governs the formation of the (111) ZnTe domain and the ZnTe epilayer orientation. These crystallographic features were also related to the atom arrangements of ZnTe and sapphire.

  19. Growth of emerald single crystals

    International Nuclear Information System (INIS)

    Bukin, G.V.; Godovikov, A.A.; Klyakin, V.A.; Sobolev, V.S.

    1986-01-01

    In addition to its use for jewelry, emerald can also be used in low-noise microwave amplifiers. The authors discuss flux crystallization of emerald and note that when emerald is grown by this method, it is desirable to use solvents which dissolve emerald with minimum deviations from congruence but at the same time with sufficient high efficiency. Emerald synthesis and crystal growth from slowly cooled solutions is discussed as another possibility. The techniques are examined. Vapor synthesis and growht of beryl crystals re reviewed and the authors experimentally study the seeded CVD crystallization of beryl from BeO, Al 2 O 3 and SiO 2 oxides, by using complex compounds as carrier agents. The color of crystals of emerald and other varieties of beryl is detemined by slelective light absorption in teh visible part of the spectrum and depends on the density and structural positions of chromphore ions: chromium, iron, vanadium, nickel, manganese and cobalt

  20. Hydrothermal Growth of Polyscale Crystals

    Science.gov (United States)

    Byrappa, Kullaiah

    In this chapter, the importance of the hydrothermal technique for growth of polyscale crystals is discussed with reference to its efficiency in synthesizing high-quality crystals of various sizes for modern technological applications. The historical development of the hydrothermal technique is briefly discussed, to show its evolution over time. Also some of the important types of apparatus used in routine hydrothermal research, including the continuous production of nanosize crystals, are discussed. The latest trends in the hydrothermal growth of crystals, such as thermodynamic modeling and understanding of the solution chemistry, are elucidated with appropriate examples. The growth of some selected bulk, fine, and nanosized crystals of current technological significance, such as quartz, aluminum and gallium berlinites, calcite, gemstones, rare-earth vanadates, electroceramic titanates, and carbon polymorphs, is discussed in detail. Future trends in the hydrothermal technique, required to meet the challenges of fast-growing demand for materials in various technological fields, are described. At the end of this chapter, an Appendix 18.A containing a more or less complete list of the characteristic families of crystals synthesized by the hydrothermal technique is given with the solvent and pressure-temperature (PT) conditions used in their synthesis.

  1. (211) oriented ZnTe growth on m-plane sapphire by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Nakasu, Taizo [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atugi-shi 243-0198 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi-shi 317-0056 (Japan)

    2013-11-15

    Single-crystalline and single domain ZnTe thin films are sought for high-performance terahertz wave detectors, and ZnTe/sapphire heterostructures were considered since the Electro-Optical (EO) effect could be obtained only from epilayers. ZnTe epilayers were grown on m-plane sapphire substrates by molecular beam epitaxy, and the potential of single domain epilayers was explored. Through the X-ray diffraction pole figure measurement it was confirmed that one (100) oriented ZnTe domain along with two kinds of (211) oriented domains were formed on the m-plane sapphire when the layer was grown at 340 C. When the layer was grown at 350 C, the (211) oriented domain dominated the film. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. The growth and characterization of well aligned RuO2 nanorods on sapphire substrates

    International Nuclear Information System (INIS)

    Chen, C C; Chen, R S; Tsai, T Y; Huang, Y S; Tsai, D S; Tiong, K K

    2004-01-01

    Self-assembled and well aligned RuO 2 nanorods (NRs) have been grown on sapphire (SA) substrates via metal-organic chemical vapour deposition (MOCVD), using bis(ethylcyclopentadienyl)ruthenium as the source reagent. The surface morphology, structural, and spectroscopic properties of the as-deposited NRs were characterized using field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), selected-area electron diffractometry (SAD), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and micro-Raman spectroscopy. FESEM micrographs reveal that vertically aligned nanorods (NRs) were grown on SA(100), while the NRs on the SA(012) were grown with a tilt angle of ∼ 35 degrees from the normal to the substrates. TEM and SAD measurements showed that the RuO 2 NRs with square cross-section have the long axis directed along the [001] direction. The XRD results indicate that the RuO 2 NRs are (002) oriented on SA(100) and (101) oriented on SA(012) substrates. A strong substrate effect on the alignment of the RuO 2 NRs growth has been demonstrated and the probable mechanism for the formation of these NRs has been discussed. XP spectra show the coexistence of higher oxidation state of ruthenium in the as-grown RuO 2 NRs. Micro-Raman spectra show the red-shift and peak broadening of the RuO 2 signatures with respect to that of the bulk counterpart which may be indicative of a phonon confinement effect for these NRs

  3. Growth morphologies of crystal surfaces

    Science.gov (United States)

    Xiao, Rong-Fu; Alexander, J. Iwan D.; Rosenberger, Franz

    1991-03-01

    We have expanded our earlier Monte Carlo model [Phys. Rev. A 38, 2447 (1988); J. Crystal Growth 100, 313 (1990)] to three dimensions and included reevaporation after accommodation and growth on dislocation-induced steps. We found again that, for a given set of growth parameters, the critical size, beyond which a crystal cannot retain its macroscopically faceted shape, scales linearly with the mean free path in the vapor. However, the three-dimensional (3D) the systems show increased shape stability compared to corresponding 2D cases. Extrapolation of the model results to mean-free-path conditions used in morphological stability experiments leads to order-of-magnitude agreement of the predicted critical size with experimental findings. The stability region for macroscopically smooth (faceted) surfaces in the parameter space of temperature and supersaturation depends on both the surface and bulk diffusion. While surface diffusion is seen to smooth the growth morphology on the scale of the surface diffusion length, bulk diffusion is always destabilizing. The atomic surface roughness increases with increase in growth temperature and supersaturation. That is, the tendency of surface kinetics anisotropies to stabilize the growth shape is reduced through thermal and kinetic roughening. It is also found that the solid-on-solid assumption, which can be advantageously used at low temperatures and supersaturations, is insufficient to describe the growth dynamics of atomically rough interfaces where bulk diffusion governs the process. For surfaces with an emerging screw dislocation, we find that the spiral growth mechanism dominates at low temperatures and supersaturations. The polygonization of a growth spiral decreases with increasing temperature or supersaturation. When the mean free path in the nutrient is comparable to the lattice constant, the combined effect of bulk and surface diffusion reduces the terrace width of a growth spiral in its center region. At elevated

  4. Electric-field gradient characterization at 181Ta impurities in sapphire single crystals

    International Nuclear Information System (INIS)

    Renteria, M.; Darriba, G.N.; Errico, L.A.; Munoz, E.L.; Eversheim, P.D.

    2005-01-01

    We report Perturbed-Angular-Correlation (PAC) experiments on corundum Al 2 O 3 single crystals implanted with 181 Hf/ 181 Ta ions at the ISKP at Bonn and measured at La Plata with high efficiency and time-resolution. The magnitude, asymmetry, and orientation (with respect to the crystalline axes) of the electric-field gradient (EFG) tensor were determined measuring the spin-rotation curves as a function of different orientations of the single crystals relative to the detector system. These results are analyzed in the framework of point-charge model and ab initio Full-Potential Linearized-Augmented Plane Wave calculations, and compared with EFG results coming from PAC experiments with 111 In/ 111 Cd impurities. This combined study enables the determination of lattice relaxations induced by the presence of the impurity and the state of charge of a deep impurity donor level in the band gap of the semiconductor. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Electric-field gradient characterization at {sup 181}Ta impurities in sapphire single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Renteria, M.; Darriba, G.N.; Errico, L.A.; Munoz, E.L. [Departamento de Fisica, Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata (Argentina); Eversheim, P.D. [Helmholtz-Institut fuer Strahlen-und Kernphysik (ISKP), Universitaet Bonn, Nussallee 14-16, 53115 Bonn (Germany)

    2005-07-01

    We report Perturbed-Angular-Correlation (PAC) experiments on corundum Al{sub 2}O{sub 3} single crystals implanted with {sup 181}Hf/{sup 181}Ta ions at the ISKP at Bonn and measured at La Plata with high efficiency and time-resolution. The magnitude, asymmetry, and orientation (with respect to the crystalline axes) of the electric-field gradient (EFG) tensor were determined measuring the spin-rotation curves as a function of different orientations of the single crystals relative to the detector system. These results are analyzed in the framework of point-charge model and ab initio Full-Potential Linearized-Augmented Plane Wave calculations, and compared with EFG results coming from PAC experiments with {sup 111}In/{sup 111}Cd impurities. This combined study enables the determination of lattice relaxations induced by the presence of the impurity and the state of charge of a deep impurity donor level in the band gap of the semiconductor. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Crystal growth of various ruthenates

    Energy Technology Data Exchange (ETDEWEB)

    Kunkemoeller, Stefan; Braden, Markus [II. Physikalisches Institut, Universitaet zu Koeln (Germany); Nugroho, Agung [Institut Teknologi Bandung (Indonesia)

    2013-07-01

    Ruthenates of the Ruddlesdon-Popper series exhibit a variety of interesting phenomena ranging from unconventional superconductivity to orbitally polarized Mott insulators. Unfortunately the crystal growth of most of these ruthenates is extremely difficult partially due to the high evaporation of ruthenium; this strongly limits the research on these fascinating materials. We have started to grow single crystals of layered and perovskite ruthenates by the travelling floating-zone method using a Canon SC1-MDH mirror furnace. For the layered Ca{sub 2-x}Sr{sub x}RuO{sub 4} series we focused first on the range of concentration where recent My-SR experiments reveal spin-density wave ordering to occur at relatively high temperature and with a sizeable ordered moment. Good quality crystals of Ca{sub 1.5}Sr{sub 0.5}RuO{sub 4} can be obtained, when an excess of 15 percent of ruthenium is added to the initial preparation of the rod and when a high growth speed up to 40mm/h is used. Even slight modifications of the growing conditions result in large amounts of (Sr/Ca)RuO{sub 3} and (Sr/Ca){sub 3}Ru{sub 2}O{sub 7} intergrowth phases. First attempts to grow perovskite and double-layered ruthenates are discussed as well.

  7. Introduction to crystal growth and characterization

    CERN Document Server

    Benz, Klaus-Werner

    2014-01-01

    This new textbook provides for the first time a comprehensive treatment of the basics of contemporary crystallography and crystal growth in a single volume. The reader will be familiarized with the concepts for the description of morphological and structural symmetry of crystals. The architecture of crystal structures of selected inorganic and molecular crystals is illustrated. The main crystallographic databases as data sources of crystal structures are described. Nucleation processes, their kinetics and main growth mechanism will be introduced in fundamentals of crystal growth. Some phase d

  8. Hanging drop crystal growth apparatus

    Science.gov (United States)

    Naumann, Robert J. (Inventor); Witherow, William K. (Inventor); Carter, Daniel C. (Inventor); Bugg, Charles E. (Inventor); Suddath, Fred L. (Inventor)

    1990-01-01

    This invention relates generally to control systems for controlling crystal growth, and more particularly to such a system which uses a beam of light refracted by the fluid in which crystals are growing to detect concentration of solutes in the liquid. In a hanging drop apparatus, a laser beam is directed onto drop which refracts the laser light into primary and secondary bows, respectively, which in turn fall upon linear diode detector arrays. As concentration of solutes in drop increases due to solvent removal, these bows move farther apart on the arrays, with the relative separation being detected by arrays and used by a computer to adjust solvent vapor transport from the drop. A forward scattering detector is used to detect crystal nucleation in drop, and a humidity detector is used, in one embodiment, to detect relative humidity in the enclosure wherein drop is suspended. The novelty of this invention lies in utilizing angular variance of light refracted from drop to infer, by a computer algorithm, concentration of solutes therein. Additional novelty is believed to lie in using a forward scattering detector to detect nucleating crystallites in drop.

  9. Measurements of Protein Crystal Face Growth Rates

    Science.gov (United States)

    Gorti, S.

    2014-01-01

    Protein crystal growth rates will be determined for several hyperthermophile proteins.; The growth rates will be assessed using available theoretical models, including kinetic roughening.; If/when kinetic roughening supersaturations are established, determinations of protein crystal quality over a range of supersaturations will also be assessed.; The results of our ground based effort may well address the existence of a correlation between fundamental growth mechanisms and protein crystal quality.

  10. Principles of crystallization, and methods of single crystal growth

    International Nuclear Information System (INIS)

    Chacra, T.

    2010-01-01

    Most of single crystals (monocrystals), have distinguished optical, electrical, or magnetic properties, which make from single crystals, key elements in most of technical modern devices, as they may be used as lenses, Prisms, or grating sin optical devises, or Filters in X-Ray and spectrographic devices, or conductors and semiconductors in electronic, and computer industries. Furthermore, Single crystals are used in transducer devices. Moreover, they are indispensable elements in Laser and Maser emission technology.Crystal Growth Technology (CGT), has started, and developed in the international Universities and scientific institutions, aiming at some of single crystals, which may have significant properties and industrial applications, that can attract the attention of international crystal growth centers, to adopt the industrial production and marketing of such crystals. Unfortunately, Arab universities generally, and Syrian universities specifically, do not give even the minimum interest, to this field of Science.The purpose of this work is to attract the attention of Crystallographers, Physicists and Chemists in the Arab universities and research centers to the importance of crystal growth, and to work on, in the first stage to establish simple, uncomplicated laboratories for the growth of single crystal. Such laboratories can be supplied with equipment, which are partly available or can be manufactured in the local market. Many references (Articles, Papers, Diagrams, etc..) has been studied, to conclude the most important theoretical principles of Phase transitions,especially of crystallization. The conclusions of this study, are summarized in three Principles; Thermodynamic-, Morphologic-, and Kinetic-Principles. The study is completed by a brief description of the main single crystal growth methods with sketches, of equipment used in each method, which can be considered as primary designs for the equipment, of a new crystal growth laboratory. (author)

  11. Economic analysis of crystal growth in space

    Science.gov (United States)

    Ulrich, D. R.; Chung, A. M.; Yan, C. S.; Mccreight, L. R.

    1972-01-01

    Many advanced electronic technologies and devices for the 1980's are based on sophisticated compound single crystals, i.e. ceramic oxides and compound semiconductors. Space processing of these electronic crystals with maximum perfection, purity, and size is suggested. No ecomonic or technical justification was found for the growth of silicon single crystals for solid state electronic devices in space.

  12. Innovation in crystal growth: A personal perspective

    Science.gov (United States)

    Mullin, J. B.

    2008-04-01

    The evolution of crystal growth has been crucially dependent on revolutionary innovations and initiatives involving ideas, technology and communication. A personal perspective is presented on some of these aspects in connection with the early history of semiconductors that have helped evolve our knowledge and advance the science and technology of crystal growth. The presentation considers examples from work on germanium, silicon, indium antimonide, gallium arsenide, indium phosphide, gallium phosphide and mercury cadmium telluride. In connection with metal organic vapour phase epitaxy (MOVPE), the influence of adduct purification for alkyls is noted together with the growth of Hg xCd 1-xTe. The role of crystal growth organisations together with initiatives in the publication of the Journal of Crystal Growth (JCG) and the pivotal role of the International Organisation of Crystal Growth (IOCG) are also highlighted in the quest for scientific excellence.

  13. Dendritic growth forms of borax crystals

    International Nuclear Information System (INIS)

    Takoo, R.K.; Patel, B.R.; Joshi, M.S.

    1983-01-01

    A variety of dendritic forms of borax grown from solutions by the film formation method is given. The changing growth morphology is followed as a function of concentration and temperature. The initial, intermediate and final growth morphologies are described and discussed. Influence of evaporation rate and supersaturation on the mechanism of growth is assessed. It is suggested that under all crystallization conditions, borax crystals have dendritic form in the initial stages of growth. (author)

  14. Crystal growth from low-temperature solutions

    International Nuclear Information System (INIS)

    Sangwal, K.

    1994-01-01

    The state of the art in crystal growth from solutions at low-temperatures has been done. The thermodynamic and kinetic parameters have been discussed in respect to different systems. The methods of crystal growth from water and organic solutions and different variants of their technical realizations have been reviewed. Also the growth by chemical reactions and gel growth have been described. The large number of examples have been shown. 21 refs, 30 figs, 3 tabs

  15. DKDP crystal growth controlled by cooling rate

    Science.gov (United States)

    Xie, Xiaoyi; Qi, Hongji; Shao, Jianda

    2017-08-01

    The performance of deuterated potassium dihydrogen phosphate (DKDP) crystal directly affects beam quality, energy and conversion efficiency in the Inertial Confinement Fusion(ICF)facility, which is related with the initial saturation temperature of solution and the real-time supersaturation during the crystal growth. However, traditional method to measure the saturation temperature is neither efficient nor accurate enough. Besides, the supersaturation is often controlled by experience, which yields the higher error and leads to the instability during the crystal growth. In this paper, DKDP solution with 78% deuteration concentration is crystallized in different temperatures. We study the relation between solubility and temperature of DKDP and fit a theoretical curve with a parabola model. With the model, the measurement of saturation temperature is simplified and the control precision of the cooling rate is improved during the crystal growth, which is beneficial for optimizing the crystal growth process.

  16. Phase-field crystal simulation facet and branch crystal growth

    Science.gov (United States)

    Chen, Zhi; Wang, Zhaoyang; Gu, Xinrui; Chen, Yufei; Hao, Limei; de Wit, Jos; Jin, Kexin

    2018-05-01

    Phase-field crystal model with one mode is introduced to describe morphological transition. The relationship between growth morphology and smooth density distribution was investigated. The results indicate that the pattern selection of dendrite growth is caused by the competition between interface energy anisotropy and interface kinetic anisotropy based on the 2D phase diagram. When the calculation time increases, the crystal grows to secondary dendrite at the dimensionless undercooling equal to - 0.4. Moreover, when noise is introduced in the growth progress, the symmetry is broken in the growth mode, and there becomes irregular fractal-like growth morphology. Furthermore, the single crystal shape develops into polycrystalline when the noise amplitude is large enough. When the dimensionless undercooling is less than - 0.3, the noise has a significant effect on the growth shape. In addition, the growth velocity of crystal near to liquid phase line is slow, while the shape far away from the liquid adapts to fast growth. Based on the simulation results, the method was proved to be effective, and it can easily obtain different crystal shapes by choosing the different points in 2D phase diagram.

  17. Protein-crystal growth experiment (planned)

    Science.gov (United States)

    Fujita, S.; Asano, K.; Hashitani, T.; Kitakohji, T.; Nemoto, H.; Kitamura, S.

    1988-01-01

    To evaluate the effectiveness of a microgravity environment on protein crystal growth, a system was developed using 5 cubic feet Get Away Special payload canister. In the experiment, protein (myoglobin) will be simultaneously crystallized from an aqueous solution in 16 crystallization units using three types of crystallization methods, i.e., batch, vapor diffusion, and free interface diffusion. Each unit has two compartments: one for the protein solution and the other for the ammonium sulfate solution. Compartments are separated by thick acrylic or thin stainless steel plates. Crystallization will be started by sliding out the plates, then will be periodically recorded up to 120 hours by a still camera. The temperature will be passively controlled by a phase transition thermal storage component and recorded in IC memory throughout the experiment. Microgravity environment can then be evaluated for protein crystal growth by comparing crystallization in space with that on Earth.

  18. Effects of impurities on crystal growth in fructose crystallization

    Science.gov (United States)

    Chu, Y. D.; Shiau, L. D.; Berglund, K. A.

    1989-10-01

    The influence of impurities on the crystallization of anhydrous fructose from aqueous solution was studied. The growth kinetics of fructose crystals in the fructose-water-glucose and fructose-water-difructose dianhydrides systems were investigated using photomicroscopic contact nucleation techniques. Glucose is the major impurity likely to be present in fructose syrup formed during corn wet milling, while several difructose dianhydrides are formed in situ under crystallization conditions and have been proposed as a cause in the decrease of overall yields. Both sets of impurities were found to cause inhibition of crystal growth, but the mechanisms responsible in each case are different. It was found that the presence of glucose increases the solubility of fructose in water and thus lowers the supersaturation of the solution. This is probably the main effect responsible for the decrease of crystal growth. Since the molecular structures of difructose dianhydrides are similar to that of fructose, they are probably "tailor-made" impurities. The decrease of crystal growth is probably caused by the incorporation of these impurities into or adsorption to the crystal surface which would accept fructose molecules in the orientation that existed in the difructose dianhydride.

  19. Growth modes of InN (000-1) on GaN buffer layers on sapphire

    International Nuclear Information System (INIS)

    Liu Bing; Kitajima, Takeshi; Chen Dongxue; Leone, Stephen R.

    2005-01-01

    In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesalike with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered

  20. Growth of single crystals of BaFe12O19 by solid state crystal growth

    Science.gov (United States)

    Fisher, John G.; Sun, Hengyang; Kook, Young-Geun; Kim, Joon-Seong; Le, Phan Gia

    2016-10-01

    Single crystals of BaFe12O19 are grown for the first time by solid state crystal growth. Seed crystals of BaFe12O19 are buried in BaFe12O19+1 wt% BaCO3 powder, which are then pressed into pellets containing the seed crystals. During sintering, single crystals of BaFe12O19 up to ∼130 μm thick in the c-axis direction grow on the seed crystals by consuming grains from the surrounding polycrystalline matrix. Scanning electron microscopy-energy dispersive spectroscopy analysis shows that the single crystal and the surrounding polycrystalline matrix have the same chemical composition. Micro-Raman scattering shows the single crystal to have the BaFe12O19 structure. The optimum growth temperature is found to be 1200 °C. The single crystal growth behavior is explained using the mixed control theory of grain growth.

  1. Epitaxial growth of InN on c-plane sapphire by pulsed laser deposition with r.f. nitrogen radical source

    International Nuclear Information System (INIS)

    Ohta, J.; Fujioka, H.; Honke, T.; Oshima, M.

    2004-01-01

    We have grown InN films on c-plane sapphire substrates by pulsed laser deposition (PLD) with a radio frequency nitrogen radical source for the first time and investigated the effect of the substrate surface nitridation on the structural and electrical properties of InN films with reflection high energy electron diffraction (RHEED), atomic force microscope, the Hall effect measurements and high-resolution X-ray diffraction (HRXRD). RHEED and HRXRD characterizations revealed that high-quality InN grows epitaxially on sapphire by PLD and its epitaxial relationship is InN (0 0 0 1) parallel sapphire (0 0 0 1) and InN [2 -1 -1 0] parallel sapphire [1 0 -1 0]. The InN crystalline quality and the electron mobility are improved by the substrate nitridation process. The area of the pits at the InN surface is reduced by the substrate nitridation process probably due to the reduction in the interface energy between InN and the substrate. The full width at half maximum of the -1 -1 2 4 X-ray rocking curve for InN grown by the present technique without using any buffer layers was as small as 34.8 arcmin. These results indicate that the present technique is promising for the growth of the high-quality InN films

  2. Synthesis of high quality graphene on capped (1 1 1) Cu thin films obtained by high temperature secondary grain growth on c-plane sapphire substrates

    Science.gov (United States)

    Kim, Youngwoo; Moyen, Eric; Yi, Hemian; Avila, José; Chen, Chaoyu; Asensio, Maria C.; Lee, Young Hee; Pribat, Didier

    2018-07-01

    We propose a novel growth technique, in which graphene is synthesized on capped Cu thin films deposited on c-plane sapphire. The cap is another sapphire plate which is just laid upon the Cu thin film, in direct contact with it. Thanks to this ‘contact cap’, Cu evaporation can be suppressed at high temperature and the 400 nm-thick Cu films can be annealed above 1000 °C, resulting in (1 1 1)-oriented grains of millimeter size. Following this high temperature annealing, graphene is grown by chemical vapor deposition during the same pump-down operation, without removing the contact cap. The orientation and doping type of the as-grown graphene were first studied, using low energy electron diffraction, as well as high resolution angle-resolved photoemission spectroscopy. In particular, the orientation relationships between the graphene and copper thin film with respect to the sapphire substrate were precisely determined. We find that the graphene sheets exhibit a minimal rotational disorder, with ~90% of the grains aligned along the copper high symmetry direction. Detailed transport measurements were also performed using field-effect transistor structures. Carrier mobility values as high as 8460 cm2 V‑1 s‑1 have been measured on top gate transistors fabricated directly on the sapphire substrate, by etching the Cu film from underneath the graphene sheets. This is by far the best carrier mobility value obtained to date for graphene sheets synthesized on a thin film-type metal substrate.

  3. Review and perspective: Sapphire optical fiber cladding development for harsh environment sensing

    Science.gov (United States)

    Chen, Hui; Buric, Michael; Ohodnicki, Paul R.; Nakano, Jinichiro; Liu, Bo; Chorpening, Benjamin T.

    2018-03-01

    The potential to use single-crystal sapphire optical fiber as an alternative to silica optical fibers for sensing in high-temperature, high-pressure, and chemically aggressive harsh environments has been recognized for several decades. A key technological barrier to the widespread deployment of harsh environment sensors constructed with sapphire optical fibers has been the lack of an optical cladding that is durable under these conditions. However, researchers have not yet succeeded in incorporating a high-temperature cladding process into the typical fabrication process for single-crystal sapphire fibers, which generally involves seed-initiated fiber growth from the molten oxide state. While a number of advances in fabrication of a cladding after fiber-growth have been made over the last four decades, none have successfully transitioned to a commercial manufacturing process. This paper reviews the various strategies and techniques for fabricating an optically clad sapphire fiber which have been proposed and explored in published research. The limitations of current approaches and future prospects for sapphire fiber cladding are discussed, including fabrication methods and materials. The aim is to provide an understanding of the past research into optical cladding of sapphire fibers and to assess possible material systems for future research on this challenging problem for harsh environment sensors.

  4. Growth of single crystals of BaFe12O19 by solid state crystal growth

    International Nuclear Information System (INIS)

    Fisher, John G.; Sun, Hengyang; Kook, Young-Geun; Kim, Joon-Seong; Le, Phan Gia

    2016-01-01

    Single crystals of BaFe 12 O 19 are grown for the first time by solid state crystal growth. Seed crystals of BaFe 12 O 19 are buried in BaFe 12 O 19 +1 wt% BaCO 3 powder, which are then pressed into pellets containing the seed crystals. During sintering, single crystals of BaFe 12 O 19 up to ∼130 μm thick in the c-axis direction grow on the seed crystals by consuming grains from the surrounding polycrystalline matrix. Scanning electron microscopy-energy dispersive spectroscopy analysis shows that the single crystal and the surrounding polycrystalline matrix have the same chemical composition. Micro-Raman scattering shows the single crystal to have the BaFe 12 O 19 structure. The optimum growth temperature is found to be 1200 °C. The single crystal growth behavior is explained using the mixed control theory of grain growth. - Highlights: • Single crystals of BaFe 12 O 19 are grown by solid state crystal growth. • A single crystal up to ∼130 μm thick (c-axis direction) grows on the seed crystal. • The single crystal and surrounding ceramic matrix have similar composition. • Micro-Raman scattering shows the single crystal has the BaFe 12 O 19 structure.

  5. Iron sulfide crystal growth: a literature review

    International Nuclear Information System (INIS)

    Dewar, E.J.

    1977-04-01

    Iron pyrite (FeS 2 ) is often found on trays and in heat exchangers in Girdler-Sulfide (G.S.) plants used to extract D 2 O from fresh water. A critical review of the literature was made to find: (i) what is known about FeS 2 crystal growth; (ii) which techniques could be used to study FeS 2 crystal growth experimentally; (iii) potential chemical additives that could be used in trace amounts to poison FeS 2 crystals and reduce their growth rate in G.S. plants. (author)

  6. A high compression crystal growth system

    International Nuclear Information System (INIS)

    Nieman, H.F.; Walton, A.A.; Powell, B.M.; Dolling, G.

    1980-01-01

    This report describes the construction and operating procedure for a high compression crystal growth system, capable of growing single crystals from the fluid phase over the temperature range of 4.2 K to 300 K, at pressures up to 900 MPa. Some experimental results obtained with the system are given for solid β-nitrogen. (auth)

  7. Photographic appraisal of crystal lattice growth technique

    Directory of Open Access Journals (Sweden)

    Kapoor D

    2005-01-01

    Full Text Available Concept of creating mechanical retention for bonding through crystal growth has been successfully achieved in the present study. By using polyacrylic acid, sulphated with sulphuric acid as etchant, abundant crystal growth was demonstrated. Keeping in view the obvious benefits of crystal growth technique, the present SEM study was aimed to observe and compare the changes brought about by different etching agents (phosphoric acid, polyacrylic acid and polyacrylic acid sulphated and to evaluate their advantages and disadvantages in an attempt to reduce iatrogenic trauma caused due to surface enamel alteration. Control and experimental groups were made of 24 and 30 premolars, respectively, for scanning electron microscopic appraisal of normal unetched and etched enamel surface and fracture site and finished surface evaluation. When compared with conventional phosphoric acid and weaker polyacrylic acid, investigations indicated that crystal growth treatment on enamel surface caused minimal iatrogenic trauma and surface alteration were restored to the original untreated condition to a large extent.

  8. Protein crystal growth in low gravity

    Science.gov (United States)

    Feigelson, Robert S.

    1993-01-01

    This Final Technical Report for NASA Grant NAG8-774 covers the period from April 27, 1989 through December 31, 1992. It covers five main topics: fluid flow studies, the influence of growth conditions on the morphology of isocitrate lyase crystals, control of nucleation, the growth of lysozyme by the temperature gradient method and graphoepitaxy of protein crystals. The section on fluid flow discusses the limits of detectability in the Schlieren imaging of fluid flows around protein crystals. The isocitrate lyase study compares crystals grown terrestrially under a variety of conditions with those grown in space. The controlling factor governing the morphology of the crystals is the supersaturation. The lack of flow in the interface between the drop and the atmosphere in microgravity causes protein precipitation in the boundary layer and a lowering of the supersaturation in the drop. This lowered supersaturation leads to improved crystal morphology. Preliminary experiments with lysozyme indicated that localized temperature gradients could be used to nucleate crystals in a controlled manner. An apparatus (thermonucleator) was designed to study the controlled nucleation of protein crystals. This apparatus has been used to nucleate crystals of materials with both normal (ice-water, Rochelle salt and lysozyme) and retrograde (horse serum albumin and alpha chymotrypsinogen A) solubility. These studies have lead to the design of an new apparatus that small and more compatible with use in microgravity. Lysozyme crystals were grown by transporting nutrient from a source (lysozyme powder) to the crystal in a temperature gradient. The influence of path length and cross section on the growth rate was demonstrated. This technique can be combined with the thermonucleator to control both nucleation and growth. Graphoepitaxy utilizes a patterned substrate to orient growing crystals. In this study, silicon substrates with 10 micron grooves were used to grow crystals of catalase

  9. GaN growth on sapphire by MOCVD - Material for HEMT structures

    NARCIS (Netherlands)

    Grzegorczyk, A.P.

    2006-01-01

    This thesis focuses on growth and basic characterization of AlGaN/GaN based high electron mobility structures. In order to provide theoretical background for the presented research, the basic physical properties of III-V nitrides and the characteristics of the HEMT structures are discussed.

  10. Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kyuseung; Chae, Sooryong; Jang, Jongjin; Min, Daehong; Kim, Jaehwan; Nam, Okhyun, E-mail: ohnam@kpu.ac.kr [Convergence Center for Advanced Nano Semiconductor (CANS), Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, 15073 (Korea, Republic of)

    2016-04-15

    In this study, self-assembled inclined (1-10-3)-oriented GaN nanorods (NRs) were grown on nanoimprinted (10-10) m-sapphire substrates using catalyst-free metal-organic chemical vapor deposition. According to X-ray phi-scans, the inclined GaN NRs were tilted at an angle of ∼57.5° to the [10-10]{sub sapp} direction. Specifically, the GaN NRs grew in a single inclined direction to the [11-20]{sub sapp}. Uni-directionally inclined NRs were formed through the one-sided (10-11)-faceted growth of the interfacial a-GaN plane layer. It was confirmed that a thin layer of a-GaN was formed on r-facet nanogrooves of the m-sapphire substrate by nitridation. The interfacial a-GaN nucleation affected both the inclined angle and the growth direction of the inclined GaN NRs. Using X-ray diffraction and selective area electron diffraction, the epitaxial relationship between the inclined (1-10-3) GaN NRs and interfacial a-GaN layer on m-sapphire substrates was systematically investigated. Moreover, the inclined GaN NRs were observed to be mostly free of stacking fault-related defects using high-resolution transmission electron microscopy.

  11. Macromolecular Crystal Growth by Means of Microfluidics

    Science.gov (United States)

    vanderWoerd, Mark; Ferree, Darren; Spearing, Scott; Monaco, Lisa; Molho, Josh; Spaid, Michael; Brasseur, Mike; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    We have performed a feasibility study in which we show that chip-based, microfluidic (LabChip(TM)) technology is suitable for protein crystal growth. This technology allows for accurate and reliable dispensing and mixing of very small volumes while minimizing bubble formation in the crystallization mixture. The amount of (protein) solution remaining after completion of an experiment is minimal, which makes this technique efficient and attractive for use with proteins, which are difficult or expensive to obtain. The nature of LabChip(TM) technology renders it highly amenable to automation. Protein crystals obtained in our initial feasibility studies were of excellent quality as determined by X-ray diffraction. Subsequent to the feasibility study, we designed and produced the first LabChip(TM) device specifically for protein crystallization in batch mode. It can reliably dispense and mix from a range of solution constituents into two independent growth wells. We are currently testing this design to prove its efficacy for protein crystallization optimization experiments. In the near future we will expand our design to incorporate up to 10 growth wells per LabChip(TM) device. Upon completion, additional crystallization techniques such as vapor diffusion and liquid-liquid diffusion will be accommodated. Macromolecular crystallization using microfluidic technology is envisioned as a fully automated system, which will use the 'tele-science' concept of remote operation and will be developed into a research facility for the International Space Station as well as on the ground.

  12. A continuous Czochralski silicon crystal growth system

    Science.gov (United States)

    Wang, C.; Zhang, H.; Wang, T. H.; Ciszek, T. F.

    2003-03-01

    Demand for large silicon wafers has driven the growth of silicon crystals from 200 to 300 mm in diameter. With the increasing silicon ingot sizes, melt volume has grown dramatically. Melt flow becomes more turbulent as melt height and volume increase. To suppress turbulent flow in a large silicon melt, a new Czochralski (CZ) growth furnace has been designed that has a shallow melt. In this new design, a crucible consists of a shallow growth compartment in the center and a deep feeding compartment around the periphery. Two compartments are connected with a narrow annular channel. A long crystal may be continuously grown by feeding silicon pellets into the dedicated feeding compartment. We use our numerical model to simulate temperature distribution and velocity field in a conventional 200-mm CZ crystal growth system and also in the new shallow crucible CZ system. By comparison, advantages and disadvantages of the proposed system are observed, operating conditions are determined, and the new system is improved.

  13. Highly c-axis oriented growth of GaN film on sapphire (0001 by laser molecular beam epitaxy using HVPE grown GaN bulk target

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2013-09-01

    Full Text Available Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001 substrates by laser molecular beam epitaxy (LMBE were investigated in the range of 500–750 °C. The grown GaN films were characterized using high resolution x-ray diffraction, atomic force microscopy (AFM, micro-Raman spectroscopy, and secondary ion mass spectroscopy (SIMS. The x-ray rocking curve full width at a half maximum (FWHM value for (0002 reflection dramatically decreased from 1582 arc sec to 153 arc sec when the growth temperature was increased from 500 °C to 600 °C and the value further decreased with increase of growth temperature up to 720 °C. A highly c-axis oriented GaN epitaxial film was obtained at 720 °C with a (0002 plane rocking curve FWHM value as low as 102 arc sec. From AFM studies, it is observed that the GaN grain size also increased with increasing growth temperature and flat, large lateral grains of size 200-300 nm was obtained for the film grown at 720 °C. The micro-Raman spectroscopy studies also exhibited the high-quality wurtzite nature of GaN film grown on sapphire at 720 °C. The SIMS measurements revealed a non-traceable amount of background oxygen impurity in the grown GaN films. The results show that the growth temperature strongly influences the surface morphology and crystalline quality of the epitaxial GaN films on sapphire grown by LMBE.

  14. Crystal growth and computational materials science

    International Nuclear Information System (INIS)

    Jayakumar, S.; Ravindran, P.; Arun Kumar, R.; Sudarshan, C.

    2012-01-01

    The proceedings of the international conference on advanced materials discusses the advances being made in the area of single crystals, their preparation and device development from these crystals and details of the progress that is taking place in the computational field relating to materials science. Computational materials science makes use of advanced simulation tools and computer interfaces to develop a virtual platform which can provide a model for real-time experiments. This book includes selected papers in topics of crystal growth and computational materials science. We are confident that the new concepts and results presented will stimulate and enhance progress of research on crystal growth and computational materials science. Papers relevant to INIS are indexed separately

  15. Method for solid state crystal growth

    Science.gov (United States)

    Nolas, George S.; Beekman, Matthew K.

    2013-04-09

    A novel method for high quality crystal growth of intermetallic clathrates is presented. The synthesis of high quality pure phase crystals has been complicated by the simultaneous formation of both clathrate type-I and clathrate type-II structures. It was found that selective, phase pure, single-crystal growth of type-I and type-II clathrates can be achieved by maintaining sufficient partial pressure of a chemical constituent during slow, controlled deprivation of the chemical constituent from the primary reactant. The chemical constituent is slowly removed from the primary reactant by the reaction of the chemical constituent vapor with a secondary reactant, spatially separated from the primary reactant, in a closed volume under uniaxial pressure and heat to form the single phase pure crystals.

  16. Crystal growth under external electric fields

    International Nuclear Information System (INIS)

    Uda, Satoshi; Koizumi, Haruhiko; Nozawa, Jun; Fujiwara, Kozo

    2014-01-01

    This is a review article concerning the crystal growth under external electric fields that has been studied in our lab for the past 10 years. An external field is applied electrostatically either through an electrically insulating phase or a direct injection of an electric current to the solid-interface-liquid. The former changes the chemical potential of both solid and liquid and controls the phase relationship while the latter modifies the transport and partitioning of ionic solutes in the oxide melt during crystallization and changes the solute distribution in the crystal

  17. Crystal growth under external electric fields

    Energy Technology Data Exchange (ETDEWEB)

    Uda, Satoshi; Koizumi, Haruhiko; Nozawa, Jun; Fujiwara, Kozo [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)

    2014-10-06

    This is a review article concerning the crystal growth under external electric fields that has been studied in our lab for the past 10 years. An external field is applied electrostatically either through an electrically insulating phase or a direct injection of an electric current to the solid-interface-liquid. The former changes the chemical potential of both solid and liquid and controls the phase relationship while the latter modifies the transport and partitioning of ionic solutes in the oxide melt during crystallization and changes the solute distribution in the crystal.

  18. Growth and Characterization of Tetraphenylphosphonium Bromide Crystal

    Directory of Open Access Journals (Sweden)

    Guangqiang Wang

    2017-05-01

    Full Text Available Multiple-phenyl phosphorous compounds are a group of chemical materials that have been used as reactants, pharmaceutical intermediates, extractants, and catalysts in organic synthetic reactions. However, the crystal growth of bulk crystals of multiple-phenyl phosphorous compounds, which may expand their applications in photonics technology, have been largely overlooked. In this article, the crystal growth of tetraphenylphosphonium bromide (TPPB has been studied in organic solvents and water. The crystal structures and crystallization features are analyzed by X-ray diffraction data. By a slow temperature-lowering method, a single-crystal of TPPB (2H2O with the size of 27 × 20 × 20 mm3 has been obtained in water. The basic thermal and optical properties were characterized. We find that the TPPB (2H2O crystal shows excellent transparent property in the near-IR region. Large Raman shifts and strong Raman scattering intensity indicate that TPPB is a potential candidate in Raman-scattering-based nonlinearity applications.

  19. Meniscus Imaging for Crystal-Growth Control

    Science.gov (United States)

    Sachs, E. M.

    1983-01-01

    Silicon crystal growth monitored by new video system reduces operator stress and improves conditions for observation and control of growing process. System optics produce greater magnification vertically than horizontally, so entire meniscus and melt is viewed with high resolution in both width and height dimensions.

  20. Epitaxial growth of Sb-doped nonpolar a-plane ZnO thin films on r-plane sapphire substrates by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Hou-Guang, E-mail: houguang@isu.edu.tw [Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan (China); Hung, Sung-Po [Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan (China)

    2014-02-15

    Highlights: ► Sb-doped nonpolar a-plane ZnO layers were epitaxially grown on sapphire substrates. ► Crystallinity and electrical properties were studied upon growth condition and doping concentration. ► The out-of-plane lattice spacing of ZnO films reduces monotonically with increasing Sb doping level. ► The p-type conductivity of ZnO:Sb film is closely correlated with annealing condition and Sb doping level. -- Abstract: In this study, the epitaxial growth of Sb-doped nonpolar a-plane (112{sup ¯}0) ZnO thin films on r-plane (11{sup ¯}02) sapphire substrates was performed by radio-frequency magnetron sputtering. The influence of the sputter deposition conditions and Sb doping concentration on the microstructural and electrical properties of Sb-doped ZnO epitaxial films was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and the Hall-effect measurement. The measurement of the XRD phi-scan indicated that the epitaxial relationship between the ZnO:Sb layer and sapphire substrate was (112{sup ¯}0){sub ZnO}//(11{sup ¯}02){sub Al{sub 2O{sub 3}}} and [11{sup ¯}00]{sub ZnO}//[112{sup ¯}0]{sub Al{sub 2O{sub 3}}}. The out-of-plane a-axis lattice parameter of ZnO films was reduced monotonically with the increasing Sb doping level. The cross-sectional transmission electron microscopy (XTEM) observation confirmed the absence of any significant antimony oxide phase segregation across the thickness of the Sb-doped ZnO epitaxial film. However, the epitaxial quality of the films deteriorated as the level of Sb dopant increased. The electrical properties of ZnO:Sb film are closely correlated with post-annealing conditions and Sb doping concentrations.

  1. Growth of optical grade germanium crystals

    International Nuclear Information System (INIS)

    Waris, M.; Akhtar, M.J.; Mehmood, N.; Ashraf, M.; Siddique, M.

    2011-01-01

    A novel design of Czochralski( CZ ) growth station in a low frequency induction furnace is described and growth of optical grade Ge crystal as a test material is performed achieving a flat solid-liquid interface shape. Grown Ge crystals are annealed in air at 450 -500 deg. C for 4 hrs and then characterized by determination of crystallographic orientation by Laue (back-reflection of X-rays) method, dislocation density studies by etch-pits formation, measuring electrical resistivity by 4-probe technique, conductivity type determination by hot probe method, measurement of hardness on Moh's scale and optical transmission measurement in IR region. The results obtained are compared to those reported in the literature. The use of this growth station for other materials is suggested. (author)

  2. Crystallization and Growth of Colloidal Nanocrystals

    CERN Document Server

    Leite, Edson Roberto

    2012-01-01

    Since the size, shape, and microstructure of nanocrystalline materials strongly impact physical and chemical properties, the development of new synthetic routes to  nanocrystals with controlled composition and morphology is a key objective of the nanomaterials community. This objective is dependent on control of the nucleation and growth mechanisms that occur during the synthetic process, which in turn requires a fundamental understanding of both classical nucleation and growth and non-classical growth processes in nanostructured materials.  Recently, a novel growth process called Oriented Attachment (OA) was identified which appears to be a fundamental mechanism during the development of nanoscale  materials. OA is a special case of aggregation that provides an important route by which nanocrystals grow, defects are formed, and unique—often symmetry-defying—crystal morphologies can be produced. This growth mechanism involves reversible self-assembly of primary nanocrystals followed by reorientati...

  3. Integrated Intelligent Modeling, Design and Control of Crystal Growth Processes

    National Research Council Canada - National Science Library

    Prasad, V

    2000-01-01

    .... This MURI program took an integrated approach towards modeling, design and control of crystal growth processes and in conjunction with growth and characterization experiments developed much better...

  4. On the growth of ammonium nitrate(III) crystals

    NARCIS (Netherlands)

    Vogels, L.J.P.; Marsman, H.A.M.; Verheijen, M.A.; Bennema, P.; Elwenspoek, Michael Curt

    The growth rate of NH4NO3 phase III crystals is measured and interpreted using two models. The first is a standard crystal growth model based on a spiral growth mechanism, the second outlines the concept of kinetical roughening. As the crystal becomes rough a critical supersaturation can be

  5. Studying Crystal Growth With the Peltier Effect

    Science.gov (United States)

    Larsen, David J., Jr.; Dressler, B.; Silberstein, R. P.; Poit, W. J.

    1986-01-01

    Peltier interface demarcation (PID) shown useful as aid in studying heat and mass transfer during growth of crystals from molten material. In PID, two dissimilar "metals" solid and liquid phases of same material. Current pulse passed through unidirectionally solidifying sample to create rapid Peltier thermal disturbance at liquid/solid interface. Disturbance, measured by thermocouple stationed along path of solidification at or near interface, provides information about position and shape of interface.

  6. Optical Investigation of Nanoconfined Crystal Growth

    Science.gov (United States)

    Kohler, F.; Dysthe, D. K.

    2015-12-01

    Crystals growing in a confined space exert forces on their surroundings. This crystallization force causes deformation of solids and is therefore particularly relevant for the comprehension of geological processes such as replacement and weathering [1]. In addition, these forces are relevant for the understanding of damages in porous building materials caused by crystallization, which is of great economical importance and fundamental for methods that can help to preserve our cultural heritage [2,3]. However, the exact behavior of the growth and the dissolution process in close contact to an interface are still not known in detail. The crystallization, the dissolution and the transport of material is mediated by a nanoconfined water film. We observe brittle NaClO3 crystals growing against a glass surface by optical methods such as reflective interference contrast microscopy (RICM) [4]. In order to carefully control the supersaturation of the fluid close to the crystal interface, a temperature regulated microfluidic system is used (fig. A). The interference based precision of RICM enables to resolve distance variations down to the sub nanometer range without any unwanted disturbances by the measuring method. The combination of RICM with a sensitive camera allows us to observe phenomena such as periodic, wavelike growth of atomic layers. These waves are particularly obvious when observing the difference between two consecutive images (fig. B). In contradiction to some theoretical results, which predict a smooth interface, some recent experiments have shown that the nanoconfined growth surfaces are rough. In combination with theoretical studies and Kinetic Monte Carlo simulations we aim at providing more realistic descriptions of surface energies and energy barriers which are able to explain the discrepancies between experiments and current theory. References:[1] Maliva, Diagenetic replacement controlled by force of crystallization, Geology, August (1988), v. 16 [2] G

  7. Implementation of ZnO/ZnMgO strained-layer superlattice for ZnO heteroepitaxial growth on sapphire

    Science.gov (United States)

    Petukhov, Vladimir; Bakin, Andrey; Tsiaoussis, Ioannis; Rothman, Johan; Ivanov, Sergey; Stoemenos, John; Waag, Andreas

    2011-05-01

    The main challenge in fabrication of ZnO-based devices is the absence of reliable p-type material. This is mostly caused by insufficient crystalline quality of the material and not well-enough-developed native point defect control of ZnO. At present high-quality ZnO wafers are still expensive and ZnO heteroepitaxial layers on sapphire are the most reasonable alternative to homoepitaxial layers. But it is still necessary to improve the crystalline quality of the heteroepitaxial layers. One of the approaches to reduce defect density in heteroepitaxial layers is to introduce a strained-layer superlattice (SL) that could stop dislocation propagation from the substrate-layer interface. In the present paper we have employed fifteen periods of a highly strained SL structure. The structure was grown on a conventional double buffer layer comprising of high-temperature MgO/low-temperature ZnO on sapphire. The influence of the SLs on the properties of the heteroepitaxial ZnO layers is investigated. Electrical measurements of the structure with SL revealed very high values of the carrier mobility up to 210 cm2/Vs at room temperature. Structural characterization of the obtained samples showed that the dislocation density in the following ZnO layer was not reduced. The high mobility signal appears to come from the SL structure or the SL/ZnO interface.

  8. Historical review of quartz crystal growth

    Science.gov (United States)

    Iwasaki, Fumiko; Iwasaki, Hideo

    2002-04-01

    The history of quartz crystal growth is reviewed from the origin to the industrialization. The developing process of growth techniques is divided into the following three stages: (1) The fundamental work based on the mineralogical genetic view point, which was performed in Italy during the end of the 19th to the beginning of the 20th centuries. (2) The works to attempt the industrial application made in Germany and in England during World War II. (3) The industrialization of quartz growth after World War II. These were initiated in England, in USA and independently in Russia. The highest mass production process was developed in Japan. The historical flow is traced by the interview of several persons based on the original references.

  9. Crystal growth of emerald by flux method

    International Nuclear Information System (INIS)

    Inoue, Mikio; Narita, Eiichi; Okabe, Taijiro; Morishita, Toshihiko.

    1979-01-01

    Emerald crystals have been formed in two binary fluxes of Li 2 O-MoO 2 and Li 2 O-V 2 O 5 using the slow cooling method and the temperature gradient method under various conditions. In the flux of Li 2 O-MoO 3 carried out in the range of 2 -- 5 of molar ratios (MoO 3 /Li 2 O), emerald was crystallized in the temperature range from 750 to 950 0 C, and the suitable crystallization conditions were found to be the molar ratio of 3 -- 4 and the temperature about 900 0 C. In the flux of Li 2 O-V 2 O 5 carried out in the range of 1.7 -- 5 of molar ratios (V 2 O 5 /Li 2 O), emerald was crystallized in the temperature range from 900 to 1150 0 . The suitable crystals were obtained at the molar ratio of 3 and the temperature range of 1000 -- 1100 0 C. The crystallization temperature rised with an increase in the molar ratio of the both fluxes. The emeralds grown in two binary fluxes were transparent green, having the density of 2.68, the refractive index of 1.56, and the two distinct bands in the visible spectrum at 430 and 600nm. The emerald grown in Li 2 O-V 2 O 5 flux was more bluish green than that grown in Li 2 O-MoO 3 flux. The size of the spontaneously nucleated emerald grown in the former flux was larger than the latter, when crystallized by the slow cooling method. As for the solubility of beryl in the two fluxes, Li 2 O-V 2 O 5 flux was superior to Li 2 O-MoO 3 flux whose small solubility of SiO 2 caused an experimental problem to the temperature gradient method. The suitability of the two fluxes for the crystal growth of emerald by the flux method was discussed from the view point of various properties of above-mentioned two fluxes. (author)

  10. Growth of the (001) face of borax crystals

    OpenAIRE

    Suharso, Suharso

    2010-01-01

    he growth rates of borax crystals from aqueous solutions in the (001) direction at various relative supersaturations were measured using in situ cell optical microscopy method. The result shows that the growth mechanism of the (001) face of borax crystal at temperature of 20 °C is spiral growth mechanism.   Keywords: Growth mechanism, borax.

  11. Iron inhibits hydroxyapatite crystal growth in vitro.

    Science.gov (United States)

    Guggenbuhl, Pascal; Filmon, Robert; Mabilleau, Guillaume; Baslé, Michel F; Chappard, Daniel

    2008-07-01

    Hemochromatosis is a known cause of osteoporosis in which the pathophysiology of bone loss is largely unknown and the role of iron remains questionable. We have investigated the effects of iron on the growth of hydroxyapatite crystals in vitro on carboxymethylated poly(2-hydroxyethyl methacrylate) pellets. This noncellular and enzyme-independent model mimics the calcification of woven bone (composed of calcospherites made of hydroxyapatite crystals). Polymer pellets were incubated with body fluid containing iron at increasing concentrations (20, 40, 60 micromol/L). Hydroxyapatite growth was studied by chemical analysis, scanning electron microscopy, and Raman microscopy. When incubated in body fluid containing iron, significant differences were observed with control pellets. Iron was detected at a concentration of 5.41- to 7.16-fold that of controls. In pellets incubated with iron, there was a approximately 3- to 4-fold decrease of Ca and P and a approximately 1.3- to 1.4-fold increase in the Ca/P ratio. There was no significant difference among the iron groups of pellets, but a trend to a decrease of Ca with the increase of iron concentration was noted. Calcospherite diameters were significantly lower on pellets incubated with iron. Raman microspectroscopy showed a decrease in crystallinity (measured by the full width of the half height of the 960 Deltacm(-1) band) with a significant increase in carbonate substitution (measured by the intensity ratio of 1071 to 960 Deltacm(-1) band). Energy dispersive x-ray analysis identified iron in the calcospherites. In vitro, iron is capable to inhibit bone crystal growth with significant changes in crystallinity and carbonate substitution.

  12. Materials of construction for silicon crystal growth

    Science.gov (United States)

    Leipold, M. H.; Odonnell, T. P.; Hagan, M. A.

    1980-01-01

    The performance of materials for construction and in contact with molten silicon for crystal growth is presented. The basis for selection considers physical compatibility, such as thermal expansion and strength, as well as chemical compatibility as indicated by contamination of the silicon. A number of new high technology materials are included as well as data on those previously used. Emphasis is placed on the sources and processing of such materials in that results are frequently dependent on the way a material is prepared as well as its intrinsic constituents.

  13. Properties of the generation of radiation in the near infrared part of the spectrum with a sapphire crystal laser having radiation-induced color centers

    International Nuclear Information System (INIS)

    Voitovich, A.P.; Grinkevich, V.E.; Kononov, V.A.; Kromskii, G.I.

    1986-01-01

    This paper investigates the spectral stability of the color centers in sapphire and the energy of lasers in which the active elements were colored with various techniques. Color centers were produced by neutron irradiation. The absorption spectra of the color centers are shown. The transformation of the spectra shows that the mutual conversions of color centers takes place during the thermal annealing of the sapphire; most of the color centers formed have luminescence. Generation or radiation with a tunable frequency was obtained in the case of transverse or quasi-longitudinal excitation by a ruby laser. The results show that ways for increasing the stability of the energy generated by a sapphire laser with color centers can be found

  14. Advances in the understanding of crystal growth mechanisms

    CERN Document Server

    Nishinaga, T; Harada, J; Sasaki, A; Takei, H

    1997-01-01

    This book contains the results of a research project entitled Crystal Growth Mechanisms on an Atomic Scale, which was carried out for 3 years by some 72 reseachers. Until recently in Japan, only the technological aspects of crystal growth have been emphasized and attention was paid only to its importance in industry. However the scientific aspects also need to be considered so that the technology of crystal growth can be developed even further. This project therefore aimed at understanding crystal growth and the emphasis was on finding growth mechanisms on an atomic scale.

  15. Beginner’s guide to flux crystal growth

    CERN Document Server

    Tachibana, Makoto

    2017-01-01

    This book introduces the principles and techniques of crystal growth by the flux method, which is arguably the most useful way to obtain millimeter- to centimeter-sized single crystals for physical research. As it is possible to find an appropriate solvent (“flux”) for nearly all inorganic materials, the flux method can be applied to the growth of many crystals ranging from transition metal oxides to intermetallic compounds. Both important principles and experimental procedures are described in a clear and accessible manner. Practical advice on various aspects of the experiment, which is not readily available in the literature, will assist the beginning graduate students in setting up the lab and conducting successful crystal growth. The mechanisms of crystal growth at an elementary level are also provided to better understand the techniques and to help in assessing the quality of the crystals. The book also contains many photographs of beautiful crystals with important physical properties of current inte...

  16. Crystal growth in zinc borosilicate glasses

    Science.gov (United States)

    Kullberg, Ana T. G.; Lopes, Andreia A. S.; Veiga, João P. B.; Monteiro, Regina C. C.

    2017-01-01

    Glass samples with a molar composition (64+x)ZnO-(16-x)B2O3-20SiO2, where x=0 or 1, were successfully synthesized using a melt-quenching technique. Based on differential thermal analysis data, the produced glass samples were submitted to controlled heat-treatments at selected temperatures (610, 615 and 620 °C) during various times ranging from 8 to 30 h. The crystallization of willemite (Zn2SiO4) within the glass matrix was confirmed by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). Under specific heat-treatment conditions, transparent nanocomposite glass-ceramics were obtained, as confirmed by UV-vis spectroscopy. The influence of temperature, holding time and glass composition on crystal growth was investigated. The mean crystallite size was determined by image analysis on SEM micrographs. The results indicated an increase on the crystallite size and density with time and temperature. The change of crystallite size with time for the heat-treatments at 615 and 620 °C depended on the glass composition. Under fixed heat-treatment conditions, the crystallite density was comparatively higher for the glass composition with higher ZnO content.

  17. Ion-induced crystal damage during plasma-assisted MBE growth of GaN layers

    Science.gov (United States)

    Kirchner, V.; Heinke, H.; Birkle, U.; Einfeldt, S.; Hommel, D.; Selke, H.; Ryder, P. L.

    1998-12-01

    Gallium nitride layers were grown by plasma-assisted molecular-beam epitaxy on (0001)-oriented sapphire substrates using an electron cyclotron resonance (ECR) and a radio frequency (rf) plasma source. An applied substrate bias was varied from -200 to +250 V, resulting in a change of the density and energy of nitrogen ions impinging the growth surface. The layers were investigated by high-resolution x-ray diffractometry and high-resolution transmission electron microscopy (HRTEM). Applying a negative bias during growth has a marked detrimental effect on the crystal perfection of the layers grown with an ECR plasma source. This is indicated by a change in shape and width of (0002) and (202¯5) reciprocal lattice points as monitored by triple axis x-ray measurements. In HRTEM images, isolated basal plane stacking faults were found, which probably result from precipitation of interstitial atoms. The crystal damage in layers grown with a highly negative substrate bias is comparable to that observed for ion implantation processes at orders of magnitude larger ion energies. This is attributed to the impact of ions on the growing surface. None of the described phenomena was observed for the samples grown with the rf plasma source.

  18. Growth modes and epitaxy of FeAl thin films on a-cut sapphire prepared by pulsed laser and ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yao, Xiang; Trautvetter, Moritz; Ziemann, Paul [Institut für Festkörperphysik, Universität Ulm, Albert-Einstein-Allee 11, 89069 Ulm (Germany); Wiedwald, Ulf [Institut für Festkörperphysik, Universität Ulm, Albert-Einstein-Allee 11, 89069 Ulm (Germany); Fakultät für Physik, Universität Duisburg-Essen, Lotharstraße 1, 47057 Duisburg (Germany)

    2014-01-14

    FeAl films around equiatomic composition are grown on a-cut (112{sup ¯}0) sapphire substrates by ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD) at ambient temperature. Subsequent successive annealing is used to establish chemical order and crystallographic orientation of the films with respect to the substrate. We find a strongly [110]-textured growth for both deposition techniques. Pole figures prove the successful preparation of high quality epitaxial films by PLD with a single in-plane orientation. IBAD-grown films, however, exhibit three in-plane orientations, all of them with broad angular distributions. The difference of the two growth modes is attributed to the existence of a metastable intermediate crystalline orientation as concluded from nonassisted sputter depositions at different substrate temperatures. The formation of the chemically ordered crystalline B2 phase is accompanied by the expected transition from ferromagnetic to paramagnetic behavior of the films. In accordance with the different thermally induced structural recovery, we find a step-like magnetic transition to paramagnetic behavior after annealing for 1 h at T{sub A} = 300 °C for IBAD deposition, while PLD-grown films show a gradual decrease of ferromagnetic signals with rising annealing temperatures.

  19. A versatile Czochralski crystal growth system with automatic diameter control

    Science.gov (United States)

    Aggarwal, M. D.; Metzl, R.; Wang, W. S.; Choi, J.

    1995-07-01

    A versatile Czochralski crystal pulling system with automatic diameter control for the growth of nonlinear optical oxide crystals is discussed. Pure and doped bulk single crystals of bismuth silicon oxide (Bi12SiO20) have been successfully grown using this system. The system consists of a regular Czochralski type pulling system with provision for continuous weighing of the growing crystal to provide feedback for power control.

  20. Development and melt growth of novel scintillating halide crystals

    Science.gov (United States)

    Yoshikawa, Akira; Yokota, Yuui; Shoji, Yasuhiro; Kral, Robert; Kamada, Kei; Kurosawa, Shunsuke; Ohashi, Yuji; Arakawa, Mototaka; Chani, Valery I.; Kochurikhin, Vladimir V.; Yamaji, Akihiro; Andrey, Medvedev; Nikl, Martin

    2017-12-01

    Melt growth of scintillating halide crystals is reviewed. The vertical Bridgman growth technique is still considered as very popular method that enables production of relatively large and commercially attractive crystals. On the other hand, the micro-pulling-down method is preferable when fabrication of small samples, sufficient for preliminary characterization of their optical and/or scintillation performance, is required. Moreover, bulk crystal growth is also available using the micro-pulling-down furnace. The examples of growths of various halide crystals by industrially friendly melt growth techniques including Czochralski and edge-defined film-fed growth methods are also discussed. Finally, traveling molten zone growth that in some degree corresponds to horizontal zone melting is briefly overviewed.

  1. Sapphire: A kinking nonlinear elastic solid

    Science.gov (United States)

    Basu, S.; Barsoum, M. W.; Kalidindi, S. R.

    2006-03-01

    Kinking nonlinear elastic (KNE) solids are a recently identified large class of solids that deform fully reversibly by the formation of dislocation-based kink bands [Barsoum et al. Phys. Rev. Lett. 92, 255508 (2004)]. We further conjectured that a high c/a ratio-that ensures that only basal slip is operative-is a sufficient condition for a solid to be KNE. The c/a ratio of sapphire is 2.73 and thus, if our conjecture is correct, it should be a KNE solid. Herein by repeatedly loading-up to 30 times-the same location of sapphire single crystals of two orientations-A and C-with a 1 μm radius spherical nanoindenter, followed by atomic force microscopy, we showed that sapphire is indeed a KNE solid. After pop-ins of the order of 100 nm, the repeated loadings give rise to fully reversible, reproducible hysteresis loops wherein the energy dissipated per unit volume per cycle Wd is of the order of 0.5 GJ/m3. Wd is due to the back and fro motion of the dislocations making up the incipient kink bands that are fully reversible. The results presented here strongly suggest that-like in graphite and mica-kink bands play a more critical role in the room temperature constrained deformation of sapphire than had hitherto been appreciated. Our interpretation is also in agreement with, and can explain most, recent nanoindentation results on sapphire.

  2. Connection between the growth rate distribution and the size dependent crystal growth

    Science.gov (United States)

    Mitrović, M. M.; Žekić, A. A.; IIić, Z. Z.

    2002-07-01

    The results of investigations of the connection between the growth rate dispersions and the size dependent crystal growth of potassium dihydrogen phosphate (KDP), Rochelle salt (RS) and sodium chlorate (SC) are presented. A possible way out of the existing confusion in the size dependent crystal growth investigations is suggested. It is shown that the size independent growth exists if the crystals belonging to one growth rate distribution maximum are considered separately. The investigations suggest possible reason for the observed distribution maxima widths, and the high data scattering on the growth rate versus the crystal size dependence.

  3. Growth and fabrication of large size sodium iodide crystal scintillator

    International Nuclear Information System (INIS)

    Sabharwal, S.C.; Karandikar, S.C.; Mirza, T.; Ghosh, B.; Deshpande, R.Y.

    1979-01-01

    The growth of 80 - 135 mm dia. Sodium iodide crystals activated with thallium is described in the present report. The growth is effected in a glazed porcelain crucible in a protective ambient of dry nitrogen. The technical details of the equipment developed have been fully described. The results of measurements on the rate of growth of crystal and the optimization of different growth parameters are reported. The dependence of various factors upon the performance characteristics of the scintillator detectors made using these crystals is also discussed. The energy resolution obtained for a typical detector of dimensions 76 mm dia x 76 mm ht. is 10 percent. (auth.)

  4. Patterned solid state growth of barium titanate crystals

    Science.gov (United States)

    Ugorek, Michael Stephen

    An understanding of microstructure evolution in ceramic materials, including single crystal development and abnormal/enhanced grain growth should enable more controlled final ceramic element structures. In this study, two different approaches were used to control single crystal development in a patterned array. These two methods are: (1) patterned solid state growth in BaTiO 3 ceramics, and (2) metal-mediated single crystal growth in BaTiO 3. With the patterned solid state growth technique, optical photolithography was used to pattern dopants as well as [001] and [110] BaTiO3 single crystal template arrays with a 1000 microm line pattern array with 1000 microm spacings. These patterns were subsequently used to control the matrix grain growth evolution and single crystal development in BaTiO3. It was shown that the growth kinetics can be controlled by a small initial grain size, atmosphere conditions, and the introduction of a dopant at selective areas/interfaces. By using a PO2 of 1x10-5 atm during high temperature heat treatment, the matrix coarsening has been limited (to roughly 2 times the initial grain size), while retaining single crystal boundary motion up to 0.5 mm during growth for dwell times up to 9 h at 1300°C. The longitudinal and lateral growth rates were optimized at 10--15 microm/h at 1300°C in a PO2 of 1x10 -5 atm for single crystal growth with limited matrix coarsening. Using these conditions, a patterned microstructure in BaTiO3 was obtained. With the metal-mediated single crystal growth technique, a novel approach for fabricating 2-2 single crystal/polymer composites with a kerf texture development were studied using both [001] and [110] BaTiO3 single crystals templates. By using a PO 2 of 1x10-11 atm during high temperature heat treatment, matrix coarsening was limited while enabling single crystal boundary motion up to 0.35 mm during growth between 1250°C and 1300°C with growth rates ˜ 3--4 microm/h for both single crystal orientations. By

  5. Growth of Ga2O3 single crystal

    OpenAIRE

    龍見, 雅美; 小池, 裕之; 市木, 伸明; Tatsumi, Masami; Koike, Hiroyuki; Ichiki, Nobuaki

    2010-01-01

    Single crystals of β-Ga2O3 for substrates of GaN LED were grown by Floating Zone(FZ) method. The transparent single crystals of 5-6 mm in diameter were reproducibly obtained by applying necking procedure and the preferential growth direction was . Many cracks were induced along the cleavage plane of (100) in slicing process, which is related to thermal stress and the growth direction. However, this preliminary growth experiments suggested that β-Ga2O3 single crystal is promising as a substrat...

  6. A Genetic Analysis of Crystal Growth

    DEFF Research Database (Denmark)

    Brown, Stanley; Sarikaya, Mehmet; Johnson, E.

    2000-01-01

    The regulation of crystal morphology by proteins is often observed in biology. It is a central feature in the formation of hard tissues such as bones, teeth and mollusc shells. We have developed a genetic system in the bacterium Escherichia coli to study the protein-mediated control of crystal...

  7. Growth and characterization of heavily doped silicon crystals

    Energy Technology Data Exchange (ETDEWEB)

    Scala, R.; Porrini, M. [MEMC Electronic Materials SpA, via Nazionale 59, 39012 Merano (Italy); Borionetti, G. [MEMC Electronic Materials SpA, viale Gherzi 31, Novara (Italy)

    2011-08-15

    Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market of discrete devices and its trend towards lower and lower resistivity levels for the silicon substrate. The growth of such heavily doped, large-diameter crystals poses several new challenges to the crystal grower, and the presence of a high dopant concentration in the crystal affects significantly its main properties, requiring also the development of dedicated characterization techniques. This paper illustrates the recent advances in the growth and characterization of silicon crystals heavily doped with antimony, arsenic, phosphorus and boron. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Needle-shaped and platelet growth of borax crystals

    International Nuclear Information System (INIS)

    Takoo, R.K.; Patel, B.R.; Joshi, M.S.

    1983-01-01

    Needle-shaped and platelet growth of borax crystals from solutions is reported. Results of microtopographical studies on both the varieties are discussed. It is suggested that a slow rate of evaporation favours needle growth and a faster rate is conducive to the growth of platelets. (author)

  9. Polishing Sapphire Substrates by 355 nm Ultraviolet Laser

    Directory of Open Access Journals (Sweden)

    X. Wei

    2012-01-01

    Full Text Available This paper tries to investigate a novel polishing technology with high efficiency and nice surface quality for sapphire crystal that has high hardness, wear resistance, and chemical stability. A Q-switched 355 nm ultraviolet laser with nanosecond pulses was set up and used to polish sapphire substrate in different conditions in this paper. Surface roughness Ra of polished sapphire was measured with surface profiler, and the surface topography was observed with scanning electronic microscope. The effects of processing parameters as laser energy, pulse repetition rate, scanning speed, incident angle, scanning patterns, and initial surface conditions on surface roughness were analyzed.

  10. Method of Promoting Single Crystal Growth During Melt Growth of Semiconductors

    Science.gov (United States)

    Su, Ching-Hua (Inventor)

    2013-01-01

    The method of the invention promotes single crystal growth during fabrication of melt growth semiconductors. A growth ampoule and its tip have a semiconductor source material placed therein. The growth ampoule is placed in a first thermal environment that raises the temperature of the semiconductor source material to its liquidus temperature. The growth ampoule is then transitioned to a second thermal environment that causes the semiconductor source material in the growth ampoule's tip to attain a temperature that is below the semiconductor source material's solidus temperature. The growth ampoule so-transitioned is then mechanically perturbed to induce single crystal growth at the growth ampoule's tip.

  11. A Cannibalistic Approach to Grand Canonical Crystal Growth.

    Science.gov (United States)

    Karmakar, Tarak; Piaggi, Pablo M; Perego, Claudio; Parrinello, Michele

    2018-04-04

    Canonical molecular dynamics simulations of crystal growth from solution suffer from severe finite-size effects. As the crystal grows, the solute molecules are drawn from the solution to the crystal, leading to a continuous drop in the solution concentration. This is in contrast to experiments in which the crystal grows at an approximately constant supersaturation of a bulk solution. Recently, Perego et al. [ J. Chem. Phys. 2015, 142, 144113] showed that in a periodic setup in which the crystal is represented as a slab, the concentration in the vicinity of the two surfaces can be kept constant while the molecules are drawn from a part of the solution that acts as a molecular reservoir. This method is quite effective in studying crystallization under controlled supersaturation conditions. However, once the reservoir is depleted, the constant supersaturation conditions cannot be maintained. We propose a variant of this method to tackle this depletion problem by simultaneously dissolving one side of the crystal while letting the other side grow. A continuous supply of particles to the solution due to the crystal dissolution maintains a steady solution concentration and avoids reservoir depletion. In this way, a constant supersaturation condition can be maintained for as long as necessary. We have applied this method to study the growth and dissolution of urea crystal from water solution under constant supersaturation and undersaturation conditions, respectively. The computed growth and dissolution rates are in good agreement with those obtained in previous studies.

  12. Growth features of ammonium hydrogen d-tartrate single crystals

    Indian Academy of Sciences (India)

    Unknown

    Abstract. Ammonium hydrogen d-tartrate (d-AHT) single crystals were grown in silica gel. The growth fea- ... solution (specific gravity, 1⋅04 g/cc) with d-tartaric acid solution having ... resulting in the production of crystal nuclei. The interface.

  13. On the growth of calcium tartrate tetrahydrate single crystals

    Indian Academy of Sciences (India)

    Unknown

    Abstract. Calcium tartrate single crystals were grown using silica gel as the growth medium. Calcium for- mate mixed with formic acid was taken as the supernatant solution. It was observed that the nucleation den- sity was reduced and the size of the crystals was improved to a large extent compared to the conventional way.

  14. Cross-twinning model of fcc crystal growth

    NARCIS (Netherlands)

    van de Waal, B.W.

    1995-01-01

    The theory developed in 1960 by Wagner, Hamilton and Seidensticker (WHS-theory) to explain observed crystal growth phenomena in Ge is critically reviewed and shown to be capable of explaining preservation of ABC stacking order in two dimensions in fcc crystals of effectively spherical closed shell

  15. Growth of strontium oxalate crystals in agar–agar gel

    Indian Academy of Sciences (India)

    Growth of strontium oxalate crystals in agar–agar gel. P V DALAL. ∗ and K B SARAF. Postgraduate Department of Physics, Pratap College, Amalner 425 401, India. MS received 16 March 2008; revised 5 April 2010. Abstract. Single crystals of strontium oxalate have been grown by using strontium chloride and oxalic acid in.

  16. Modeling and simulation of Si crystal growth from melt

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Lijun; Liu, Xin; Li, Zaoyang [National Engineering Research Center for Fluid Machinery and Compressors, School of Energy and Power Engineering, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Miyazawa, Hiroaki; Nakano, Satoshi; Kakimoto, Koichi [Research Institute for Applied Mechanics, Kyushu University, Kasuga 816-8580 (Japan)

    2009-07-01

    A numerical simulator was developed with a global model of heat transfer for any crystal growth taking place at high temperature. Convective, conductive and radiative heat transfers in the furnace are solved together in a conjugated way by a finite volume method. A three-dimensional (3D) global model was especially developed for simulation of heat transfer in any crystal growth with 3D features. The model enables 3D global simulation be conducted with moderate requirement of computer resources. The application of this numerical simulator to a CZ growth and a directional solidification process for Si crystals, the two major production methods for crystalline Si for solar cells, was introduced. Some typical results were presented, showing the importance and effectiveness of numerical simulation in analyzing and improving these kinds of Si crystal growth processes from melt. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Liquid nitrogen dewar for protein crystal growth

    Science.gov (United States)

    2001-01-01

    Gaseous Nitrogen Dewar apparatus developed by Dr. Alex McPherson of the University of California, Irvine for use aboard Mir and the International Space Station allows large quantities of protein samples to be crystallized in orbit. The specimens are contained either in plastic tubing (heat-sealed at each end). Biological samples are prepared with a precipitating agent in either a batch or liquid-liquid diffusion configuration. The samples are then flash-frozen in liquid nitrogen before crystallization can start. On orbit, the Dewar is placed in a quiet area of the station and the nitrogen slowly boils off (it is taken up by the environmental control system), allowing the proteins to thaw to begin crystallization. The Dewar is returned to Earth after one to four months on orbit, depending on Shuttle flight opportunities. The tubes then are analyzed for crystal presence and quality

  18. Silicon crystal growth using a liquid-feeding Czochralski method

    Science.gov (United States)

    Shiraishi, Yutaka; Kurosaka, Shoei; Imai, Masato

    1996-09-01

    Silicon single crystals with uniformity along the growth direction were grown using a new continuous Czochralski (CCZ) method. Polycrystalline silicon rods used as charge materials are melted by carbon heaters over a crucible without contact between the raw material and other substances. Using this method, silicon crystals with diameters as large as 6 or 8 inch and good uniformity along the growth direction were grown.

  19. Controlled growth of filamentary crystals and fabrication of single-crystal whisker probes

    International Nuclear Information System (INIS)

    Givargizov, E. I.

    2006-01-01

    The growth of filamentary crystals (whiskers) on a single-crystal substrate through the vapour-liquid-solid mechanism is described. The possibility of fabricating oriented systems of whiskers on the basis of this mechanism of crystal growth is noted. A phenomenon that is important for nanotechnology is noted: the existence of a critical diameter of whiskers, below which they are not formed. The phenomenon of radial periodic instability, which is characteristic of nanowhiskers, is described and the ways of its elimination are shown. The possibility of transforming whiskers into single-crystal tips and the growth of crystalline diamond particles at their apices are noted as important for practice. Possible applications of systems of whiskers and tips are described briefly. Particular attention is paid to the latest direction in whisker technology-fabrication of single-crystal whisker probes for atomic force microscopy

  20. Nucleation and growth of the Naica giant gypsum crystals.

    Science.gov (United States)

    Otálora, Fermín; García-Ruiz, JuanMa

    2014-04-07

    The Cave of Giant Crystals in the Naica mine (Mexico) is one of the most amazing displays of mineral beauty ever created in nature. In addition to the colossal crystals of gypsum, which in some cases exceed eleven meters in length and one meter in thickness, the scenery fashioned by the crystalline beams that thrust through the darkness of the cave from floor to ceiling with a luster like moonlight is a unique example of harmony based on crystal symmetry. We review the crystallogenesis of this remarkable and challenging phenomenon of mineralization near equilibrium that can be used to teach the basics of nucleation and crystal growth.

  1. Hydrothermal growth of PbSO4 (Anglesite) single crystal

    International Nuclear Information System (INIS)

    Kikuta, Ko-ichi; Yoneta, Yasuhito; Yogo, Toshinobu; Hirano, Shin-ichi

    1994-01-01

    Hydrothermal growth of single crystals of PbSO 4 , which is known as a natural mineral called anglesite, was investigated. Lead nitrate and nitric acid solutions were found to be useful for the growth of angle-site on the basis of the experimental results on the dissolution behavior. Relatively large euhedral single crystals bound by {210} and {101} planes were successfully grown in 1.5 mol/kg Pb(NO 3 ) 2 at 400degC and 100 MPa. Optical characterization revealed that the grown anglesite crystals can be useful for scintillators material. (author)

  2. Advanced crystal growth techniques for thallium bromide semiconductor radiation detectors

    Science.gov (United States)

    Datta, Amlan; Becla, Piotr; Guguschev, Christo; Motakef, Shariar

    2018-02-01

    Thallium Bromide (TlBr) is a promising room-temperature radiation detector candidate with excellent charge transport properties. Currently, Travelling Molten Zone (TMZ) technique is widely used for growth of semiconductor-grade TlBr crystals. However, there are several challenges associated with this type of crystal growth process including lower yield, high thermal stress, and low crystal uniformity. To overcome these shortcomings of the current technique, several different crystal growth techniques have been implemented in this study. These include: Vertical Bridgman (VB), Physical Vapor Transport (PVT), Edge-defined Film-fed Growth (EFG), and Czochralski Growth (Cz). Techniques based on melt pulling (EFG and Cz) were demonstrated for the first time for semiconductor grade TlBr material. The viability of each process along with the associated challenges for TlBr growth has been discussed. The purity of the TlBr crystals along with its crystalline and electronic properties were analyzed and correlated with the growth techniques. Uncorrected 662 keV energy resolutions around 2% were obtained from 5 mm x 5 mm x 10 mm TlBr devices with virtual Frisch-grid configuration.

  3. Effect of the laser sputtering parameters on the orientation of a cerium oxide buffer layer on sapphire and the properties of a YBa2Cu3Ox superconducting film

    DEFF Research Database (Denmark)

    Mozhaev, P. B.; Ovsyannikov, G. A.; Skov, Johannes

    1999-01-01

    The effect of the laser sputtering parameters on the crystal properties of CeO2 buffer layers grown on a (1 (1) under bar 02) sapphire substrate and on the properties of superconducting YBa2Cu3Ox thin films are investigated. It is shown that (100) and (111) CeO2 growth is observed, depending on t...

  4. The growth of crystals of erbium hydride

    International Nuclear Information System (INIS)

    Grimshaw, J.A.; Spooner, F.J.; Wilson, C.G.; McQuillan, A.D.

    1981-01-01

    Crystals of the rare-earth hydride ErH 2 have been produced with face areas greater than a square millimetre and corresponding volumes exceeding those of earlier crystals by orders of magnitude. The hydride, which was produced in bulk polycrystalline form by hydriding erbium metal at 950 0 C, has been examined by optical and X-ray techniques. For material of composition ErH 2 and ErHsub(1.8) the size of the grains and their degree of strain appears to depend more on oxygen contamination during formation and on the subsequent cooling procedure, than on the size of erbium metal crystals in the starting material. (author)

  5. Crystal growth of CVD diamond and some of its peculiarities

    CERN Document Server

    Piekarczyk, W

    1999-01-01

    Experiments demonstrate that CVD diamond can form in gas environments that are carbon undersaturated with respect to diamond. This fact is, among others, the most serious violation of principles of chemical thermodynamics. In this $9 paper it is shown that none of the principles is broken when CVD diamond formation is considered not a physical process consisting in growth of crystals but a chemical process consisting in accretion of macro-molecules of polycyclic $9 saturated hydrocarbons belonging to the family of organic compounds the smallest representatives of which are adamantane, diamantane, triamantane and so forth. Since the polymantane macro-molecules are in every respect identical with $9 diamond single crystals with hydrogen-terminated surfaces, the accretion of polymantane macro- molecules is a process completely equivalent to the growth of diamond crystals. However, the accretion of macro-molecules must be $9 described in a way different from that used to describe the growth of crystals because so...

  6. Crystal growth and scintillation properties of Lu substituted CeBr.sub.3./sub. single crystals

    Czech Academy of Sciences Publication Activity Database

    Ito, T.; Yokota, Y.; Kurosawa, S.; Král, Robert; Kamada, K.; Pejchal, Jan; Ohashi, Y.; Yoshikawa, A.

    2016-01-01

    Roč. 452, Oct (2016), s. 65-68 ISSN 0022-0248. [American Conference on Crystal Growth and Epitaxy /20./ (ACCGE) / 17th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE) / 2nd 2D Electronic Materials Symposium. Big Sky, MT, 02.08.2015-07.08.2015] Institutional support: RVO:68378271 Keywords : radiation * halides * scintillator materials * crystal growth Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.751, year: 2016

  7. Czochralski growth of gallium indium antimonide alloy crystals

    Energy Technology Data Exchange (ETDEWEB)

    Tsaur, S.C.

    1998-02-01

    Attempts were made to grow alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb by the conventional Czochralski process. A transparent furnace was used, with hydrogen purging through the chamber during crystal growth. Single crystal seeds up to about 2 to 5 mole% InSb were grown from seeds of 1 to 2 mole% InSb, which were grown from essentially pure GaSb seeds of the [111] direction. Single crystals were grown with InSb rising from about 2 to 6 mole% at the seed ends to about 14 to 23 mole% InSb at the finish ends. A floating-crucible technique that had been effective in reducing segregation in doped crystals, was used to reduce segregation in Czochralski growth of alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb. Crystals close to the targeted composition of 1 mole% InSb were grown. However, difficulties were encountered in reaching higher targeted InSb concentrations. Crystals about 2 mole% were grown when 4 mole% was targeted. It was observed that mixing occurred between the melts rendering the compositions of the melts; and, hence, the resultant crystal unpredictable. The higher density of the growth melt than that of the replenishing melt could have triggered thermosolutal convection to cause such mixing. It was also observed that the floating crucible stuck to the outer crucible when the liquidus temperature of the replenishing melt was significantly higher than that of the growth melt. The homogeneous Ga{sub 1{minus}x}In{sub x}Sb single crystals were grown successfully by a pressure-differential technique. By separating a quartz tube into an upper chamber for crystal growth and a lower chamber for replenishing. The melts were connected by a capillary tube to suppress mixing between them. A constant pressure differential was maintained between the chambers to keep the growth melt up in the growth chamber. The method was first tested with a low temperature alloy Bi{sub 1{minus}x}Sb{sub x}. Single crystals of Ga{sub 1{minus}x}In{sub x}Sb were grown with uniform

  8. Silicon Crystal Growth by the Electromagnetic Czochralski (EMCZ) Method

    Science.gov (United States)

    Watanabe, Masahito; Eguchi, Minoru; Hibiya, Taketoshi

    1999-01-01

    A new method for growing silicon crystals by using electromagnetic force to rotate the melt without crucible rotation has been developed. We call it electromagnetic Czochralski (EMCZ) growth. An electromagnetic force in the azimuthal direction is generated in the melt by the interaction between an electric current (I) through the melt in the radial direction and a vertical magnetic field (B). The rotation rate (ωm) of the silicon melt is continuously changed from 0 to over 105 rpm under I = 0 to 8 A and B = 0 to 0.1 T. Thirty-mm-diameter silicon single crystals free of dislocations could be grown under two conditions: I = 2.0 A and B = 0.05 T (ωm = 105 rpm); and I =0.2 A and B = 0.1 T (ωm = 15 rpm). The oxygen concentration in the crystals was 8 ×1017 atoms/cm3 for the high rotation rate and 1×1017 atoms/cm3 for the low rotation rate. The oxygen-concentration distributions in the radial direction in both crystals were more homogeneous than those in the crystals grown by conventional CZ and/or MCZ growth. This new crystal-growth method can be easily adopted for growing large-diameter silicon crystals.

  9. Shallow Melt Apparatus for Semicontinuous Czochralski Crystal Growth

    Science.gov (United States)

    Wang, T.; Ciszek, T. F.

    2006-01-10

    In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.

  10. Monte Carlo simulation of continuous-space crystal growth

    International Nuclear Information System (INIS)

    Dodson, B.W.; Taylor, P.A.

    1986-01-01

    We describe a method, based on Monte Carlo techniques, of simulating the atomic growth of crystals without the discrete lattice space assumed by conventional Monte Carlo growth simulations. Since no lattice space is assumed, problems involving epitaxial growth, heteroepitaxy, phonon-driven mechanisms, surface reconstruction, and many other phenomena incompatible with the lattice-space approximation can be studied. Also, use of the Monte Carlo method circumvents to some extent the extreme limitations on simulated timescale inherent in crystal-growth techniques which might be proposed using molecular dynamics. The implementation of the new method is illustrated by studying the growth of strained-layer superlattice (SLS) interfaces in two-dimensional Lennard-Jones atomic systems. Despite the extreme simplicity of such systems, the qualitative features of SLS growth seen here are similar to those observed experimentally in real semiconductor systems

  11. Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment

    Science.gov (United States)

    Su, Ching-Hua

    2014-01-01

    A low gravity material experiment will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). There are two sections of the flight experiment: (I) crystal growth of ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, by physical vapor transport (PVT) and (II) melt growth of CdZnTe by directional solidification. The main objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the grown crystals as results of buoyancy-driven convection and growth interface fluctuations caused by irregular fluid-flows on Earth. The investigation consists of extensive ground-based experimental and theoretical research efforts and concurrent flight experimentation. This talk will focus on the ground-based studies on the PVT crystal growth of ZnSe and related ternary compounds. The objectives of the ground-based studies are (1) obtain the experimental data and conduct the analyses required to define the optimum growth parameters for the flight experiments, (2) perfect various characterization techniques to establish the standard procedure for material characterization, (3) quantitatively establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low-gravity environment and (4) develop theoretical and analytical methods required for such evaluations. ZnSe and related ternary compounds have been grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals have been characterized extensively by various techniques to correlate the grown crystal properties with the growth conditions.

  12. Fluid Physics and Macromolecular Crystal Growth in Microgravity

    Science.gov (United States)

    Helliwell, John R.; Snell, Edward H.; Chayen, Naomi E.; Judge, Russell A.; Boggon, Titus J.; Pusey, M. L.; Rose, M. Franklin (Technical Monitor)

    2000-01-01

    The first protein crystallization experiment in microgravity was launched in April, 1981 and used Germany's Technologische Experimente unter Schwerelosigkeit (TEXUS 3) sounding rocket. The protein P-galactosidase (molecular weight 465Kda) was chosen as the sample with a liquid-liquid diffusion growth method. A sliding device brought the protein, buffer and salt solution into contact when microgravity was reached. The sounding rocket gave six minutes of microgravity time with a cine camera and schlieren optics used to monitor the experiment, a single growth cell. In microgravity a strictly laminar diffusion process was observed in contrast to the turbulent convection seen on the ground. Several single crystals, approx 100micron in length, were formed in the flight which were of inferior but of comparable visual quality to those grown on the ground over several days. A second experiment using the same protocol but with solutions cooled to -8C (kept liquid with glycerol antifreeze) again showed laminar diffusion. The science of macromolecular structural crystallography involves crystallization of the macromolecule followed by use of the crystal for X-ray diffraction experiments to determine the three dimensional structure of the macromolecule. Neutron protein crystallography is employed for elucidation of H/D exchange and for improved definition of the bound solvent (D20). The structural information enables an understanding of how the molecule functions with important potential for rational drug design, improved efficiency of industrial enzymes and agricultural chemical development. The removal of turbulent convection and sedimentation in microgravity, and the assumption that higher quality crystals will be produced, has given rise to the growing number of crystallization experiments now flown. Many experiments can be flown in a small volume with simple, largely automated, equipment - an ideal combination for a microgravity experiment. The term "protein crystal growth

  13. Crystal growth and physical properties of Ferro-pnictides

    Energy Technology Data Exchange (ETDEWEB)

    Aswartham, Saicharan

    2012-11-08

    The thesis work presented here emphasizes important aspects of crystal growth and the influence of chemical substitution in Fe-As superconductors. High temperature solution growth technique is one of most powerful and widely used technique to grow single crystals of various materials. The biggest advantage of high temperature solution growth technique is the, possibility of growing single crystals from both congruently and incongruently melting materials. Solution growth technique has the potential to control high vapour pressures, given the fact that, in Fe-based superconductors elements with high vapour pressure like As, K, Li and Na have to be handled during the crystal growth procedure. In this scenario high temperature solution growth is the best suitable growth technique to synthesize sizable homogeneous single crystals. Using self-flux high temperature solution growth technique, large centimeter-sized high quality single crystals of BaFe{sub 2}As{sub 2} were grown. This pristine compound BaFe{sub 2}As{sub 2} undergoes structural and magnetic transition at T{sub S/N} = 137 K. By suppressing this magnetic transition and stabilizing tetragonal phase with chemical substitution, like Co-doping and Na-doping, bulk superconductivity is achieved. Superconducting transitions of as high as T{sub c} = 34 K with Na substitution and T{sub c} = 25 K with Co-doping were obtained. A combined electronic phase diagram has been achieved for both electron doping with Co and hole doping with Na in BaFe{sub 2}As{sub 2}. Single crystals of LiFe{sub 1-x}Co{sub x}As with x = 0, 0.025, 0.05 and 0.075 were grown by a self-flux high temperature solution growth technique. The charge doping in LiFeAs is achieved with the Co-doping in Fe atoms. The superconducting properties investigated by means of temperature dependent magnetization and resistivity revealed that superconductivity is shifted to lower temperatures and with higher amount of charge carriers superconductivity is killed

  14. Transmission Electron Microscopy (TEM) Sample Preparation of Si(1-x)Gex in c-Plane Sapphire Substrate

    Science.gov (United States)

    Kim, Hyun Jung; Choi, Sang H.; Bae, Hyung-Bin; Lee, Tae Woo

    2012-01-01

    The National Aeronautics and Space Administration-invented X-ray diffraction (XRD) methods, including the total defect density measurement method and the spatial wafer mapping method, have confirmed super hetero epitaxy growth for rhombohedral single crystalline silicon germanium (Si1-xGex) on a c-plane sapphire substrate. However, the XRD method cannot observe the surface morphology or roughness because of the method s limited resolution. Therefore the authors used transmission electron microscopy (TEM) with samples prepared in two ways, the focused ion beam (FIB) method and the tripod method to study the structure between Si1-xGex and sapphire substrate and Si1?xGex itself. The sample preparation for TEM should be as fast as possible so that the sample should contain few or no artifacts induced by the preparation. The standard sample preparation method of mechanical polishing often requires a relatively long ion milling time (several hours), which increases the probability of inducing defects into the sample. The TEM sampling of the Si1-xGex on sapphire is also difficult because of the sapphire s high hardness and mechanical instability. The FIB method and the tripod method eliminate both problems when performing a cross-section TEM sampling of Si1-xGex on c-plane sapphire, which shows the surface morphology, the interface between film and substrate, and the crystal structure of the film. This paper explains the FIB sampling method and the tripod sampling method, and why sampling Si1-xGex, on a sapphire substrate with TEM, is necessary.

  15. Growth of GaN on Sapphire via Low-Temperature Deposited Buffer Layer and Realization of p-Type GaN by Mg Doping Followed by Low-Energy Electron Beam Irradiation

    Science.gov (United States)

    Amano, Hiroshi

    2015-12-01

    This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs. The most important work was done in the mid- to late 80s. The background to the author's work and the process by which the technology enabling the growth of GaN and the realization of p-type GaN was established are reviewed.

  16. Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture).

    Science.gov (United States)

    Amano, Hiroshi

    2015-06-26

    This Review is a personal reflection on the research that led to the development of a method for growing gallium nitride (GaN) on a sapphire substrate. The results paved the way for the development of smart display systems using blue LEDs. The most important work was done in the mid to late 80s. The background to the author's work and the process by which the technology that enables the growth of GaN and the realization of p-type GaN was established are reviewed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Amano, Hiroshi [Department of Electrical Engineering and Computer Science, Venture Business Laboratory, Akasaki Research Center, Nagoya University (Japan)

    2015-06-15

    This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs. The most important work was done in the mid to late 1980s. The background to the author's work and the process by which the technology enabling the growth of GaN and the realization of p-type GaN was established are reviewed. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Development of n- and p-type Doped Perovskite Single Crystals Using Solid-State Single Crystal Growth (SSCG) Technique

    Science.gov (United States)

    2017-10-09

    for AGG should be minimal. For this purpose, the seeds for AGG may also be provided externally. This process is called the solid-state single...bonding process . Figure 31 shows (a) the growth of one large single crystal from one small single crystal seed as well as (b) the growth of one...one bi-crystal seed : One large bi-crystal can be grown from one small bi-crystal by SSCG process . Fig. 32. Diffusion bonding process for

  19. Controlled Growth of Rubrene Nanowires by Eutectic Melt Crystallization

    Science.gov (United States)

    Chung, Jeyon; Hyon, Jinho; Park, Kyung-Sun; Cho, Boram; Baek, Jangmi; Kim, Jueun; Lee, Sang Uck; Sung, Myung Mo; Kang, Youngjong

    2016-03-01

    Organic semiconductors including rubrene, Alq3, copper phthalocyanine and pentacene are crystallized by the eutectic melt crystallization. Those organic semiconductors form good eutectic systems with the various volatile crystallizable additives such as benzoic acid, salicylic acid, naphthalene and 1,3,5-trichlorobenzene. Due to the formation of the eutectic system, organic semiconductors having originally high melting point (Tm > 300 °C) are melted and crystallized at low temperature (Te = 40.8-133 °C). The volatile crystallizable additives are easily removed by sublimation. For a model system using rubrene, single crystalline rubrene nanowires are prepared by the eutectic melt crystallization and the eutectic-melt-assisted nanoimpinting (EMAN) technique. It is demonstrated that crystal structure and the growth direction of rubrene can be controlled by using different volatile crystallizable additives. The field effect mobility of rubrene nanowires prepared using several different crystallizable additives are measured and compared.

  20. Growth of mercuric iodide single crystals from dimethylsulfoxide

    International Nuclear Information System (INIS)

    Carlston, R.C.

    1976-01-01

    Dimethylsulfoxide is used as a solvent for the growth of red mercuric iodide (HgI 2 ) crystals for use in radiation detectors. The hygroscopic property of the solvent allows controlled amounts of water to enter into the solvent phase and diminish the large solubility of HgI 2 so that the precipitating solid collects as well-defined euhedral crystals which grow into a volume of several cc

  1. Defect reduction in seeded aluminum nitride crystal growth

    Science.gov (United States)

    Bondokov, Robert T.; Schowalter, Leo J.; Morgan, Kenneth; Slack, Glen A; Rao, Shailaja P.; Gibb, Shawn Robert

    2017-09-26

    Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

  2. Iron single crystal growth from a lithium-rich melt

    Science.gov (United States)

    Fix, M.; Schumann, H.; Jantz, S. G.; Breitner, F. A.; Leineweber, A.; Jesche, A.

    2018-03-01

    α -Fe single crystals of rhombic dodecahedral habit were grown from a Li84N12Fe∼3 melt. Crystals of several millimeter along a side form at temperatures around T ≈ 800 ° C. Upon further cooling the growth competes with the formation of Fe-doped Li3N. The b.c.c. structure and good sample quality of α -Fe single crystals were confirmed by X-ray and electron diffraction as well as magnetization measurements and chemical analysis. A nitrogen concentration of 90 ppm was detected by means of carrier gas hot extraction. Scanning electron microscopy did not reveal any sign of iron nitride precipitates.

  3. Ultra-large single crystals by abnormal grain growth.

    Science.gov (United States)

    Kusama, Tomoe; Omori, Toshihiro; Saito, Takashi; Kise, Sumio; Tanaka, Toyonobu; Araki, Yoshikazu; Kainuma, Ryosuke

    2017-08-25

    Producing a single crystal is expensive because of low mass productivity. Therefore, many metallic materials are being used in polycrystalline form, even though material properties are superior in a single crystal. Here we show that an extraordinarily large Cu-Al-Mn single crystal can be obtained by abnormal grain growth (AGG) induced by simple heat treatment with high mass productivity. In AGG, the sub-boundary energy introduced by cyclic heat treatment (CHT) is dominant in the driving pressure, and the grain boundary migration rate is accelerated by repeating the low-temperature CHT due to the increase of the sub-boundary energy. With such treatment, fabrication of single crystal bars 70 cm in length is achieved. This result ensures that the range of applications of shape memory alloys will spread beyond small-sized devices to large-scale components and may enable new applications of single crystals in other metallic and ceramics materials having similar microstructural features.Growing large single crystals cheaply and reliably for structural applications remains challenging. Here, the authors combine accelerated abnormal grain growth and cyclic heat treatments to grow a superelastic shape memory alloy single crystal to 70 cm.

  4. Crystal growth velocity in deeply undercooled Ni-Si alloys

    Science.gov (United States)

    Lü, Y. J.

    2012-02-01

    The crystal growth velocity of Ni95Si5 and Ni90Si10 alloys as a function of undercooling is investigated using molecular dynamics simulations. The modified imbedded atom method potential yields the equilibrium liquidus temperatures T L ≈ 1505 and 1387 K for Ni95Si5 and Ni90Si10 alloys, respectively. From the liquidus temperatures down to the deeply undercooled region, the crystal growth velocities of both the alloys rise to the maximum with increasing undercooling and then drop slowly, whereas the athermal growth process presented in elemental Ni is not observed in Ni-Si alloys. Instead, the undercooling dependence of the growth velocity can be well-described by the diffusion-limited model, furthermore, the activation energy associated with the diffusion from melt to interface increases as the concentration increases from 5 to 10 at.% Si, resulting in the remarkable decrease of growth velocity.

  5. Hanging drop crystal growth apparatus and method

    Science.gov (United States)

    Carter, Daniel C. (Inventor); Smith, Robbie E. (Inventor)

    1989-01-01

    An apparatus (10) is constructed having a cylindrical enclosure (16) within which a disc-shaped wicking element (18) is positioned. A well or recess (22) is cut into an upper side (24) of this wicking element, and a glass cover plate or slip (28) having a protein drop disposed thereon is sealably positioned on the wicking element (18), with drop (12) being positioned over well or recess (22). A flow of control fluid is generated by a programmable gradient former (16), with this control fluid having a vapor pressure that is selectively variable. This flow of control fluid is coupled to the wicking element (18) where control fluid vapor diffusing from walls (26) of the recess (22) is exposed to the drop (12), forming a vapor pressure gradient between the drop (12) and the control fluid vapor. Initially, this gradient is adjusted to draw solvent from the drop (12) at a relatively high rate, and as the critical supersaturation point is approached (the point at which crystal nucleation occurs), the gradient is reduced to more slowly draw solvent from the drop (12). This allows discrete protein molecules more time to orient themselves into an ordered crystalline lattice, producing protein crystals which, when processed by X-ray crystallography, possess a high degree of resolution.

  6. Erythritol: crystal growth from the melt.

    Science.gov (United States)

    Lopes Jesus, A J; Nunes, Sandra C C; Ramos Silva, M; Matos Beja, A; Redinha, J S

    2010-03-30

    The structural changes occurring on erythritol as it is cooled from the melt to low temperature, and then heated up to the melting point have been investigated by differential scanning calorimetry (DSC), polarized light thermal microscopy (PLTM), X-ray powder diffraction (PXRD) and Fourier transform infrared spectroscopy (FTIR). By DSC, it was possible to set up the conditions to obtain an amorphous solid, a crystalline solid, or a mixture of both materials in different proportions. Two crystalline forms have been identified: a stable and a metastable one with melting points of 117 and 104 degrees C, respectively. The fusion curve decomposition of the stable form revealed the existence of three conformational structures. The main paths of the crystallization from the melt were followed by PLTM. The texture and colour changes allowed the characterization of the different phases and transitions in which they are involved on cooling as well as on heating processes. The type of crystallization front and its velocity were also followed by microscopic observation. These observations, together with the data provided by PXRD, allowed elucidating the transition of the metastable form into the stable one. The structural changes occurring upon the cooling and subsequent heating processes, namely those arising from intermolecular hydrogen bonds, were also accompanied by infrared spectroscopy. Particular attention was given to the spectral changes occurring in the OH stretching region. Copyright (c) 2009 Elsevier B.V. All rights reserved.

  7. Modelisation and numerical simulation for bulk crystal growth processes

    International Nuclear Information System (INIS)

    Duffar, F.; Dusserre, P.; Barat, C.; Nabot, J.P.

    1993-01-01

    The aim of this work is to study the relevance of numerical simulation for improving the process control in the field of crystal growth. This investigation focused on the growth of semiconductor and halide crystals by the Bridgman solidification technique, the principle of which is to cool a seeded feed material contained in a crucible, either by pulling the crucible or by decreasing the temperature in the furnace. Calculations are performed with the finite element method, and for comparison, experiments are carried out on Bridgman pulling machines operating either in a laboratory or in industrial plants. Calculations and experimental data have shown a good agreement and a satisfactory reliability

  8. Crystal structure and crystal growth of the polar ferrimagnet CaBaFe4O7

    Science.gov (United States)

    Perry, R. S.; Kurebayashi, H.; Gibbs, A.; Gutmann, M. J.

    2018-05-01

    Magnetic materials are a cornerstone for developing spintronic devices for the transport of information via magnetic excitations. To date, relatively few materials have been investigated for the purpose of spin transport, mostly due to the paucity of suitable candidates as these materials are often chemically complex and difficult to synthesize. We present the crystal growth and a structure solution on the high-temperature crystal structure of the layered, polar ferrimagnet CaBaFe4O7 , which is a possible new contender for spintronics research. The space group is identified as P 3 by refinement of single crystal and powder neutron diffraction data. At 400 K, the trigonal lattice parameters are a =11.0114 (11 )Å and c =10.330 (3 )Å . The structure is similar to the low-temperature phase with alternating layers of triangular and Kagome-arranged Fe-O tetrahedra. We also present details of the crystal growth by traveling solvent method.

  9. Growth of large detector crystals. CRADA final report

    International Nuclear Information System (INIS)

    Boatner, L.A.; Samuelson, S.

    1997-01-01

    In the course of a collaborative research effort between L.A. Boatner of Oak Ridge National Laboratory and Prof. Alex Lempicki of the Department of Chemistry of Boston University, a new highly efficient and very fast scintillator for the detection of gamma-rays was discovered. This new scintillator consists of a single crystal of lutetium orthophosphate (LuPO 4 ) to which a small percentage of trivalent cerium is added as an activator ion. The new lutetium orthophosphate-cerium scintillator was found to be superior in performance to bismuth germanium oxide--a material that is currently widely used as a gamma-ray detector in a variety of medical, scientific, and technical applications. Single crystals of LuPO 4 and related rare-earth orthophosphates had been grown for a number of years in the ORNL Solid State Division prior to the discovery of the efficient gamma-ray-scintillation response of LuPO 4 :Ce. The high-temperature-solvent (flux-growth) method used for the growth of these crystals was capable of producing crystals in sizes that were adequate for research purposes but that were inadequate for commercial-scale production and widespread application. The CRADA between ORNL and Deltronic Crystal Industries of Dover, NJ was undertaken for the purpose of investigating alternate approaches, such as top-seeded-solution growth, to the growth of LuPO 4 :Ce scintillator crystals in sizes significantly larger than those obtainable through the application of standard flux-growth methods and, therefore, suitable for commercial sales and applications

  10. Growth and characterisation of lead iodide single crystals

    International Nuclear Information System (INIS)

    Tonn, Justus

    2012-01-01

    The work in hand deals with the growth and characterisation of lead iodide (PbI 2 ) single crystals. PbI 2 is regarded as a promising candidate for low-noise X- and gamma ray detection at room temperature. Its benefits if compared to conventional materials like HgI 2 , CdTe, Si, or GaAs lie in a band gap energy of 2.32 eV, an excellent ability to absorb radiation, and a high electrical resistivity. For an application of PbI 2 as detector material the growth and characterisation of crystals with high chemical and structural quality is extremely challenging. In light of this, the effectiveness of zone purification of the PbI 2 used for crystal growth was confirmed by spectroscopic analysis. Furthermore, technological aspects during processing of purified PbI 2 were investigated. With the help of thermal analysis, a correlation was found between the degree of exposing the source material to oxygen from the air and the structural quality of the resulting crystals. A hydrogen treatment was applied to PbI 2 as an effective method for the removal of oxidic pollutions, which resulted in a significant reduction of structural defects like polytypic growth and stress-induced cracking. The growth of PbI 2 single crystals was, among others, carried out by the Bridgman-Stockbarger method. In this context, much effort was put on the investigation of influences resulting from the design and preparation of ampoules. For the first time, crystal growth of PbI 2 was also carried out by the Czochralski method. If compared to the Bridgman-Stockbarger method, the Czochralski technique allowed a significantly faster growth of nearly crack-free crystals with a reproducible predetermination of crystallographic orientation. By an optimised sample preparation of PbI 2 , surface orientations perpendicular to the usually cleaved (0001) plane were realised. It is now possible to determine the material properties along directions which were so far not accessible. Thus, for example, the ratio of

  11. Effects of growth conditions on thermal profiles during Czochralski silicon crystal growth

    Science.gov (United States)

    Choe, Kwang Su; Stefani, Jerry A.; Dettling, Theodore B.; Tien, John K.; Wallace, John P.

    1991-01-01

    An eddy current testing method was used to continuously monitor crystal growth process and investigate the effects of growth conditions on thermal profiles during Czochralski silicon crystal growth. The experimental concept was to monitor the intrinsic electrical conductivities of the growing crystal and deduce temperature values from them. In terms of the experiments, the effects of changes in growth parameters, which include the crystal and crucible rotation rates, crucible position, and pull rate, and hot-zone geometries were investigated. The results show that the crystal thermal profile could shift significantly as a function of crystal length if the closed-loop control fails to maintain a constant thermal condition. As a direct evidence to the effects of the melt flow on heat transfer processes, a thermal gradient minimum was observed when the crystal/crucible rotation combination was 20/-10 rpm cw. The thermal gradients in the crystal near the growth interface were reduced most by decreasing the pull rate or by reducing the radiant heat loss to the environment; a nearly constant axial thermal gradient was achieved when either the pull rate was decreased by half, the height of the exposed crucible wall was doubled, or a radiation shield was placed around the crystal. Under these conditions, the average axial thermal gradient along the surface of the crystal was about 4-5°C/mm. When compared to theoretical results found in literature, the axial profiles correlated well with the results of the models which included radiant interactions. However, the radial gradients estimated from three-frequency data were much higher than what were predicted by known theoretical models. This discrepancy seems to indicate that optical phenomenon within the crystal is significant and should be included in theoretical modeling.

  12. The Growth of Protein Crystals Using McDUCK

    Science.gov (United States)

    Ewing, Felicia; Wilson, Lori; Nadarajah, Arunan; Pusey, Marc

    1998-01-01

    Most of the current microgravity crystal growth hardware is optimized to produce crystals within the limited time available on orbit. This often results in the actual nucleation and growth process being rushed or the system not coming to equilibrium within the limited time available. Longer duration hardware exists, but one cannot readily pick out crystals grown early versus those which nucleated and grew more slowly. We have devised a long duration apparatus, the Multi-chamber Dialysis Unit for Crystallization Kinetics, or McDUCK. This apparatus-is a series of protein chambers, stacked upon a precipitant reservoir chamber. All chambers are separated by a dialysis membrane, which serves to pass small molecules while retaining the protein. The volume of the Precipitant chamber is equal to the sum of the volumes of the protein chamber. In operation, the appropriate chambers are filled with precipitant solution or protein solution, and the McDUCK is placed standing upright, with the precipitant chamber on the bottom. The precipitant diffuses upwards over time, with the time to reach equilibration a function of the diffusivity of the precipitant and the overall length of the diffusion pathway. Typical equilibration times are approximately 2-4 months, and one can readily separate rapid from slow nucleation and growth crystals. An advantage on Earth is that the vertical precipitant concentration gradient dominates that of the solute, thus dampening out solute density gradient driven convective flows. However, large Earth-grown crystals have so far tended to be more two dimensional. Preliminary X-ray diffraction analysis of lysozyme crystals grown in McDUCK have indicated that the best, and largest, come from the middle chambers, suggesting that there is an optimal growth rate. Further, the improvements in diffraction resolution have been better signal to noise ratios in the low resolution data, not an increase in resolution overall. Due to the persistently large crystals

  13. Growth and scintillation properties of gadolinium and yttrium orthovanadate crystals

    International Nuclear Information System (INIS)

    Voloshina, O.V.; Baumer, V.N.; Bondar, V.G.; Kurtsev, D.A.; Gorbacheva, T.E.; Zenya, I.M.; Zhukov, A.V.; Sidletskiy, O.Ts.

    2012-01-01

    Aiming to explore the possibility of using the undoped rare-earth orthovanadates as scintillation materials, we developed the procedure for growth of gadolinium (GdVO 4 ) and yttrium (YVO 4 ) orthovanadate single crystals by Czochralski method, and determined the optimal conditions of their after-growth annealing. Optical, luminescent, and scintillation properties of YVO 4 and GdVO 4 were discussed versus known literature data. Scintillation characteristics of GdVO 4 were determined for the first time.

  14. Growth, spectral and thermal studies of ibuprofen crystals

    Energy Technology Data Exchange (ETDEWEB)

    Ramukutty, S.; Ramachandran, E. [Department of Physics, Thiruvalluvar College, Papanasam (India)

    2012-01-15

    RS -Ibuprofen was crystallized for the first time in silica gel under suitable pH conditions by reduction of solubility method. The grown crystals were characterized by single crystal X-ray diffraction and density measurement. The functional groups present in the crystal were identified using Fourier transform infrared spectroscopy. Optical bandgap energy of ibuprofen was estimated as 3.19(3) eV from UV-Vis spectrum. Thermogravimetric analysis revealed that ibuprofen is thermally stable upto 102.9 C and the initial loss of mass was due to evaporation only. Morphological study showed that the growth is prominent along b-axis and the prominent face is {l_brace}100{r_brace}. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Metal Halide Perovskite Single Crystals: From Growth Process to Application

    Directory of Open Access Journals (Sweden)

    Shuigen Li

    2018-05-01

    Full Text Available As a strong competitor in the field of optoelectronic applications, organic-inorganic metal hybrid perovskites have been paid much attention because of their superior characteristics, which include broad absorption from visible to near-infrared region, tunable optical and electronic properties, high charge mobility, long exciton diffusion length and carrier recombination lifetime, etc. It is noted that perovskite single crystals show remarkably low trap-state densities and long carrier diffusion lengths, which are even comparable with the best photovoltaic-quality silicon, and thus are expected to provide better optoelectronic performance. This paper reviews the recent development of crystal growth in single-, mixed-organic-cation and fully inorganic halide perovskite single crystals, in particular the solution approach. Furthermore, the application of metal hybrid perovskite single crystals and future perspectives are also highlighted.

  16. Growth morphology of zinc tris(thiourea) sulphate crystals

    Indian Academy of Sciences (India)

    The growth morphology of crystals of zinc tris(thiourea) sulphate (ZTS) is investigated experimentally, and computed using the Hartman–Perdok approach. Attachment energies of the observed habit faces are calculated for determining their relative morphological importance. A computer code is developed for carrying out ...

  17. Direction-specific interactions control crystal growth by oriented attachment

    DEFF Research Database (Denmark)

    Li, Dongsheng; Nielsen, Michael H; Lee, Jonathan R.I.

    2012-01-01

    The oriented attachment of molecular clusters and nanoparticles in solution is now recognized as an important mechanism of crystal growth in many materials, yet the alignment process and attachment mechanism have not been established. We performed high-resolution transmission electron microscopy ...

  18. Crystal growth of Li10B3O5

    International Nuclear Information System (INIS)

    Sugiyama, Akira; Gallagher, Hugh G.; Han, Thomas P.J.

    1999-09-01

    The growth of boron 10 isotope enriched L 10 BO (Li 10 B 3 O 5 ) optical crystal has been developed from Top-Seeded-Solution-Growth using a resistance furnace. In the preparation for growth materials, we have made further improvement on a charge loading technique to a crucible and succeeded in forming suitable high temperature flux for producing crystals. Adequate temperature gradient of 1K/cm inside the crucible was achieved from searching for a combination of setting temperatures in the vertical three-zone furnace and installing a ceramic ring under the crucible. We have also optimized seed holder configuration and established growth conditions by several attempts. As a result, two good quality L 10 BO crystals were produced with sizes of 14 x 25 x 22 mm and 13 x 10 x 12 mm from oriented seed crystals. Although these sizes were limited by the size of the crucible used, appropriate oriented samples were extracted for detailed studies in optical measurements. (author)

  19. Growth of lead molybdate crystals by vertical Bridgman method

    Indian Academy of Sciences (India)

    Unknown

    The seeds were put in the seed wells, then the feed materials were filled in the cylinder of crucibles. The assembled crucible was sealed in order to prevent the volatilization of the melt during crystal growth. The cru- cible was installed in a refractory tube filled with Al2O3 powder to isolate it from external temperature fluctua-.

  20. Crystal growth and comparison of vibrational and thermal properties

    Indian Academy of Sciences (India)

    During the course of a literature survey of metal compounds containing both thiourea and urea ligands, the title paper by Gunasekaran et al [1] reporting on the growth of the so-called urea thiourea mercuric chloride (UTHC) and urea thiourea mercuric sulphate. (UTHS) crystals attracted our attention. For formulating these ...

  1. Phase field simulations of ice crystal growth in sugar solutions

    NARCIS (Netherlands)

    Sman, Van Der R.G.M.

    2016-01-01

    We present the first model ever, that describes explicitly ice crystal growth in a sugar solution during freezing. This 2-D model uses the phase field method, supplemented with realistic, and predictive theories on the thermodynamics and (diffusion) kinetics of this food system. We have to make

  2. Epitaxial growth and characterization of approximately 300-nm-thick AlInN films nearly lattice-matched to c-plane GaN grown on sapphire

    Science.gov (United States)

    Miyoshi, Makoto; Yamanaka, Mizuki; Egawa, Takashi; Takeuchi, Tetsuya

    2018-05-01

    AlInN epitaxial films with film thicknesses up to approximately 300 nm were grown nearly lattice-matched to a c-plane GaN-on-sapphire template by metalorganic chemical vapor deposition. The AlInN films showed relative good crystal qualities and flat surfaces, despite the existence of surface pits connected to dislocations in the underlying GaN film. The refractive index derived in this study agreed well with a previously reported result obtained over the whole visible wavelength region. The extinction coefficient spectrum exhibited a clear absorption edge, and the bandgap energy for AlInN nearly lattice-matched to GaN was determined to be approximately 4.0 eV.

  3. The 1993 annual conference of the Israeli Association for Crystal Growth. Program and abstracts

    International Nuclear Information System (INIS)

    1993-11-01

    Papers presented in oral and poster sessions of one day conference, organized by Israeli Association for Crystal Growth, are compiled in this document. Main topics covered in this document can be classified as: (i) Fundamental and numerical analysis of crystal growth. (ii) Techniques of crystal growth and structural analysis. (iii) Thin film growth and characterization

  4. Control of crystal growth in water purification by directional freeze crystallization

    Science.gov (United States)

    Conlon, William M. (Inventor)

    1996-01-01

    A Directional Freeze Crystallization system employs an indirect contact heat exchanger to freeze a fraction of liquid to be purified. The unfrozen fraction is drained away and the purified frozen fraction is melted. The heat exchanger must be designed in accordance with a Growth Habit Index to achieve efficient separation of contaminants. If gases are dissolved in the liquid, the system must be pressurized.

  5. Growth of high-temperature superconductor crystals from flux

    International Nuclear Information System (INIS)

    Demianets, L.N.; Bykov, A.B.; Melnikov, O.K.; Stishov, S.M.

    1991-01-01

    Crystallization of high-temperature superconductors was studied in La-Sr-Cu-O, Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O systems. Platelet crystals YBa 2 Cu 3 Osub(6.5+x) were obtained by spontaneous crystallization from homogeneous nonstoichiometric melts enriched in barium and copper oxides. Lasub(2-x)Sr x CuO 4 was prepared by slow cooling of melts enriched in copper oxide. Bi 2 (Sr, Ca)sub(n+1)Cu n O y , (n=1;2) was obtained by melting zone travelling. The crystals show transition to superconducting state at T=93K, ΔT 0.2-0.5 K (Y, Ba cuprate), T=87K, ΔT 2K (Bi, Sr, Ca-cuprate). La, Sr-cuprate single crystals obtained by Czochralski method did not show transition to superconducting state. For flux-grown crystals T c was 5-26 K depending on the composition, growth and heat treatment. The short characterization of some accessory phases (Ba 3 Y 2 Cu 3 PtO 10 , Casub(1.75)Srsub(1.5)Cusub(0.75)PtO 6 , BaCuO 2 , Ba 41 Cu 44 O 84 Cl 2 ) is reported. (author). 15 ref s., 8 figs

  6. Semiconducting icosahedral boron arsenide crystal growth for neutron detection

    Science.gov (United States)

    Whiteley, C. E.; Zhang, Y.; Gong, Y.; Bakalova, S.; Mayo, A.; Edgar, J. H.; Kuball, M.

    2011-03-01

    Semiconducting icosahedral boron arsenide, B12As2, is an excellent candidate for neutron detectors, thermoelectric converters, and radioisotope batteries, for which high quality single crystals are required. Thus, the present study was undertaken to grow B12As2 crystals by precipitation from metal solutions (nickel) saturated with elemental boron (or B12As2 powder) and arsenic in a sealed quartz ampoule. B12As2 crystals of 10-15 mm were produced when a homogeneous mixture of the three elements was held at 1150 °C for 48-72 h and slowly cooled (3.5 °C/h). The crystals varied in color and transparency from black and opaque to clear and transparent. X-ray topography (XRT), and elemental analysis by energy dispersive X-ray spectroscopy (EDS) confirmed that the crystals had the expected rhombohedral structure and chemical stoichiometry. The concentrations of residual impurities (nickel, carbon, etc.) were low, as measured by Raman spectroscopy and secondary ion mass spectrometry (SIMS). Additionally, low etch-pit densities (4.4×107 cm-2) were observed after etching in molten KOH at 500 °C. Thus, the flux growth method is viable for growing large, high-quality B12As2 crystals.

  7. Growth and optical microscopy observation of the lysozyme crystals

    OpenAIRE

    R.Vlokh; L.Marsel; I.Teslyuk; O.G.Vlokh

    2001-01-01

    The little single lysozyme crystals in the capillary after 15 days of growth process with average size 0.1´0.1´0.16mm3 were obtained. It was shown that lysozyme crystals are optically anisotropical and birefringence along a axis is Dn=(2.2±0.5)´10-3 in visible spectrum region. From the measurements of crystallographic angles follows that on the {001} faces angles equal a=81o, b=99o. On the sexangle faces angles equal e=100o, f=140o and g=120o. On the base of obtained results the lysozyme crys...

  8. Hp Ge: Purification, crystal growth, and annealing properties

    International Nuclear Information System (INIS)

    Hall, R.N.

    1984-01-01

    The prospects for growing HP Ge crystals of increased size and purity are examined. One interesting approach is to grow dislocation-free crystals, which must then be annealed to reduce the concentration of V 2 H traps. The phenomena which occur during annealing are discussed and compared with experiment. Hydrogen, present in atomic form at the growth temperature, forms H 2 molecules during cooling, causing the effective diffusion coefficient to decrease rapidly. Models representing the reactions between H and the V 2 H, A(H, Si), and D(H,O) complexes are presented and analyzed

  9. Protein crystal growth studies at the Center for Macromolecular Crystallography

    International Nuclear Information System (INIS)

    DeLucas, Lawrence J.; Long, Marianna M.; Moore, Karen M.; Harrington, Michael; McDonald, William T.; Smith, Craig D.; Bray, Terry; Lewis, Johanna; Crysel, William B.; Weise, Lance D.

    2000-01-01

    The Center for Macromolecular Crystallography (CMC) has been involved in fundamental studies of protein crystal growth (PCG) in microgravity and in our earth-based laboratories. A large group of co-investigators from academia and industry participated in these experiments by providing protein samples and by performing the x-ray crystallographic analysis. These studies have clearly demonstrated the usefulness of a microgravity environment for enhancing the quality and size of protein crystals. Review of the vapor diffusion (VDA) PCG results from nineteen space shuttle missions is given in this paper

  10. Unusual ruby-sapphire transition in alluvial megacrysts, Cenozoic basaltic gem field, New England, New South Wales, Australia

    Science.gov (United States)

    Sutherland, Frederick L.; Graham, Ian T.; Harris, Stephen J.; Coldham, Terry; Powell, William; Belousova, Elena A.; Martin, Laure

    2017-05-01

    Rare ruby crystals appear among prevailing sapphire crystals mined from placers within basaltic areas in the New England gem-field, New South Wales, Australia. New England ruby (NER) has distinctive trace element features compared to those from ruby elsewhere in Australia and indeed most ruby from across the world. The NER suite includes ruby (up to 3370 ppm Cr), pink sapphire (up to 1520 ppm Cr), white sapphire (up to 910 ppm) and violet, mauve, purple, or bluish sapphire (up to 1410 ppm Cr). Some crystals show outward growth banding in this respective colour sequence. All four colour zones are notably high in Ga (up to 310 ppm) and Si (up to 1820 ppm). High Ga and Ga/Mg values are unusual in ruby and its trace element plots (laser ablation-inductively coupled plasma-mass spectrometry) and suggests that magmatic-metasomatic inputs were involved in the NER suite genesis. In situ oxygen isotope analyses (secondary ion mass spectrometry) across the NER suite colour range showed little variation (n = 22; δ18O = 4.4 ± 0.4, 2σ error), and are values typical for corundum associated with ultramafic/mafic rocks. The isolated NER xenocryst suite, corroded by basalt transport and with few internal inclusions, presents a challenge in deciphering its exact origin. Detailed consideration of its high Ga chemistry in relation to the known geology of the surrounding region was used to narrow down potential sources. These include Late Palaeozoic-Triassic fractionated I-type granitoid magmas or Mesozoic-Cenozoic felsic fractionates from basaltic magmas that interacted with early Palaeozoic Cr-bearing ophiolite bodies in the New England Orogen. Other potential sources may lie deeper within lower crust-mantle metamorphic assemblages, but need to match the anomalous high-Ga geochemistry of the New England ruby suite.

  11. Nanoparticle-mediated nonclassical crystal growth of sodium fluorosilicate nanowires and nanoplates

    Directory of Open Access Journals (Sweden)

    Hongxia Li

    2011-12-01

    Full Text Available We observed nonclassical crystal growth of the sodium fluorosilicate nanowires, nanoplates, and hierarchical structures through self-assembly and aggregation of primary intermediate nanoparticles. Unlike traditional ion-by-ion crystallization, the primary nanoparticles formed first and their subsequent self-assembly, fusion, and crystallization generated various final crystals. These findings offer direct evidences for the aggregation-based crystallization mechanism.

  12. Crystal growth and characterization of calcium metaborate scintillators

    Science.gov (United States)

    Fujimoto, Y.; Yanagida, T.; Kawaguchi, N.; Fukuda, K.; Totsuka, D.; Watanabe, K.; Yamazaki, A.; Chani, V.; Nikl, M.; Yoshikawa, A.

    2013-03-01

    Calcium metaborate CaB2O4 single crystals were grown by the Czochralski (CZ) method with the radio-frequency (RF) heating system. In these crystals, a plane cleavage was observed along the growth direction. The crystals had an 80% transparency, and no absorption bands were detected in the 190-900 nm wavelength range. The 241Am 5.5 MeV α-ray-excited radioluminescence spectrum of CaB2O4 demonstrated a broad intrinsic luminescence peak at 300-400 nm, which originated from the lattice defects or an exciton-based emission. According to the pulse height spectrum, when irradiated by neutrons from a 252Cf source, the scintillation light yielded approximately 3200 photons per neutron (ph/n).

  13. Screening and Crystallization Plates for Manual and High-throughput Protein Crystal Growth

    Science.gov (United States)

    Thorne, Robert E. (Inventor); Berejnov, Viatcheslav (Inventor); Kalinin, Yevgeniy (Inventor)

    2010-01-01

    In one embodiment, a crystallization and screening plate comprises a plurality of cells open at a top and a bottom, a frame that defines the cells in the plate, and at least two films. The first film seals a top of the plate and the second film seals a bottom of the plate. At least one of the films is patterned to strongly pin the contact lines of drops dispensed onto it, fixing their position and shape. The present invention also includes methods and other devices for manual and high-throughput protein crystal growth.

  14. Mathematical modeling and numerical simulation of Czochralski Crystal Growth

    Energy Technology Data Exchange (ETDEWEB)

    Jaervinen, J.; Nieminen, R. [Center for Scientific Computing, Espoo (Finland)

    1996-12-31

    A detailed mathematical model and numerical simulation tools based on the SUPG Finite Element Method for the Czochralski crystal growth has been developed. In this presentation the mathematical modeling and numerical simulation of the melt flow and the temperature distribution in a rotationally symmetric crystal growth environment is investigated. The temperature distribution and the position of the free boundary between the solid and liquid phases are solved by using the Enthalpy method. Heat inside of the Czochralski furnace is transferred by radiation, conduction and convection. The melt flow is governed by the incompressible Navier-Stokes equations coupled with the enthalpy equation. The melt flow is numerically demonstrated and the temperature distribution in the whole Czochralski furnace. (author)

  15. Mathematical modeling and numerical simulation of Czochralski Crystal Growth

    Energy Technology Data Exchange (ETDEWEB)

    Jaervinen, J; Nieminen, R [Center for Scientific Computing, Espoo (Finland)

    1997-12-31

    A detailed mathematical model and numerical simulation tools based on the SUPG Finite Element Method for the Czochralski crystal growth has been developed. In this presentation the mathematical modeling and numerical simulation of the melt flow and the temperature distribution in a rotationally symmetric crystal growth environment is investigated. The temperature distribution and the position of the free boundary between the solid and liquid phases are solved by using the Enthalpy method. Heat inside of the Czochralski furnace is transferred by radiation, conduction and convection. The melt flow is governed by the incompressible Navier-Stokes equations coupled with the enthalpy equation. The melt flow is numerically demonstrated and the temperature distribution in the whole Czochralski furnace. (author)

  16. Crystal growth within a phase change memory cell.

    Science.gov (United States)

    Sebastian, Abu; Le Gallo, Manuel; Krebs, Daniel

    2014-07-07

    In spite of the prominent role played by phase change materials in information technology, a detailed understanding of the central property of such materials, namely the phase change mechanism, is still lacking mostly because of difficulties associated with experimental measurements. Here, we measure the crystal growth velocity of a phase change material at both the nanometre length and the nanosecond timescale using phase-change memory cells. The material is studied in the technologically relevant melt-quenched phase and directly in the environment in which the phase change material is going to be used in the application. We present a consistent description of the temperature dependence of the crystal growth velocity in the glass and the super-cooled liquid up to the melting temperature.

  17. Growth of crystalline semiconductor materials on crystal surfaces

    CERN Document Server

    Aleksandrov, L

    2013-01-01

    Written for physicists, chemists, and engineers specialising in crystal and film growth, semiconductor electronics, and various applications of thin films, this book reviews promising scientific and engineering trends in thin films and thin-films materials science. The first part discusses the physical characteristics of the processes occurring during the deposition and growth of films, the principal methods of obtaining semiconductor films and of reparing substrate surfaces on which crystalline films are grown, and the main applications of films. The second part contains data on epitaxial i

  18. In Situ Observation of Antisite Defect Formation during Crystal Growth

    International Nuclear Information System (INIS)

    Kramer, M. J.; Napolitano, R. E.; Mendelev, M. I.

    2010-01-01

    In situ x-ray diffraction (XRD) coupled with molecular dynamics (MD) simulations have been used to quantify antisite defect trapping during crystallization. Rietveld refinement of the XRD data revealed a marked lattice distortion which involves an a axis expansion and a c axis contraction of the stable C11b phase. The observed lattice response is proportional in magnitude to the growth rate, suggesting that the behavior is associated with the kinetic trapping of lattice defects. MD simulations demonstrate that this lattice response is due to incorporation of 1% to 2% antisite defects during growth.

  19. TEM studies of the crystal growth of indanthrone pigments

    International Nuclear Information System (INIS)

    McHendry, P.

    1998-01-01

    The aim of this work was to study the crystal growth of indanthrone during the pigmentation process. The colouring properties of a pigment are dependant on the chemical and crystallographic structure of the pigment. However, other factors are known to affect these properties including particle size, particle size distribution and level of dispersion in the chosen application medium. The parameters which affect the growth of the pigment particles were investigated with the emphasis placed on the mechanism by which growth took place. The final form of the crystals after growth was also investigated in some detail. Various electron microscopy techniques were employed in the investigations in this thesis. High and low magnification imaging and diffraction were studied on the CTEM (conventional transmission electron microscope) whilst PEELS (parallel electron energy loss spectroscopy) and DPC (differential phase contrast) studies took place on the VG HB5 STEM (scanning transmission electron microscope). In addition to these studies, x-ray diffraction and surface area analysis techniques were employed. The low magnification CTEM work gave good information on the size, shape and size distribution of the pigment particles and enabled detailed analysis of the level of growth attained under varied reaction conditions. (author)

  20. A Proposed Model for Protein Crystal Nucleation and Growth

    Science.gov (United States)

    Pusey, Marc; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    How does one take a molecule, strongly asymmetric in both shape and charge distribution, and assemble it into a crystal? We propose a model for the nucleation and crystal growth process for tetragonal lysozyme, based upon fluorescence, light, neutron, and X-ray scattering data, size exclusion chromatography experiments, dialysis kinetics, AFM, and modeling of growth rate data, from this and other laboratories. The first species formed is postulated to be a 'head to side' dimer. Through repeating associations involving the same intermolecular interactions this grows to a 4(sub 3) helix structure, that in turn serves as the basic unit for nucleation and subsequent crystal growth. High salt attenuates surface charges while promoting hydrophobic interactions. Symmetry facilitates subsequent helix-helix self-association. Assembly stability is enhanced when a four helix structure is obtained, with each bound to two neighbors. Only two unique interactions are required. The first are those for helix formation, where the dominant interaction is the intermolecular bridging anion. The second is the anti-parallel side-by-side helix-helix interaction, guided by alternating pairs of symmetry related salt bridges along each side. At this stage all eight unique positions of the P4(sub3)2(sub 1),2(sub 1) unit cell are filled. The process is one of a) attenuating the most strongly interacting groups, such that b) the molecules begin to self-associate in defined patterns, so that c) symmetry is obtained, which d) propagates as a growing crystal. Simple and conceptually obvious in hindsight, this tells much about what we are empirically doing when we crystallize macromolecules. By adjusting the growth parameters we are empirically balancing the intermolecular interactions, preferentially attenuating the dominant strong (for lysozyme the charged groups) while strengthening the lesser strong (hydrophobic) interactions. In the general case for proteins the lack of a singularly defined

  1. Synthesis of titanium sapphire by ion implantation

    International Nuclear Information System (INIS)

    Morpeth, L.D.; McCallum, J.C.; Nugent, K.W.

    1998-01-01

    Since laser action was first demonstrated in titanium sapphire (Ti:Al 2 O 3 ) in 1982, it has become the most widely used tunable solid state laser source. The development of a titanium sapphire laser in a waveguide geometry would yield an elegant, compact, versatile and highly tunable light source useful for applications in many areas including optical telecommunications. We are investigating whether ion implantation techniques can be utilised to produce suitable crystal quality and waveguide geometry for fabrication of a Ti:Al 2 O 3 waveguide laser. The implantation of Ti and O ions into c-axis oriented α-Al 2 O 3 followed by subsequent thermal annealing under various conditions has been investigated as a means of forming the waveguide and optimising the fraction of Ti ions that have the correct oxidation state required for laser operation. A Raman Microprobe is being used to investigate the photo-luminescence associated with Ti 3+ ion. Initial photoluminescence measurements of ion implanted samples are encouraging and reveal a broad luminescence profile over a range of ∼ .6 to .9 μm, similar to that expected from Ti 3+ . Rutherford Backscattering and Ion Channelling analysis have been used to study the crystal structure of the samples following implantation and annealing. This enables optimisation of the implantation parameters and annealing conditions to minimise defect levels which would otherwise limit the ability of light to propagate in the Ti:Al 2O 3 waveguide. (authors)

  2. Magnetic Control in Crystal Growth from a Melt

    Science.gov (United States)

    Huang, Yue

    Control of bulk melt crystal growth techniques is desirable for producing semiconductors with the highest purity and ternary alloys with tunable electrical properties. Because these molten materials are electrically conducting, external magnetic fields are often employed to regulate the flow in the melt. However, complicated by the coupled flow, thermal, electromagnetic and chemical physics, such magnetic control is typically empirical or even an educated guess. Two magnetic flow control mechanisms: flow damping by steady magnetic fields, and flow stirring by alternating magnetic fields, are investigated numerically. Magnetic damping during optically-heated float-zone crystal growth is modeled using a spectral collocation method. The Marangoni convection at the free melt-gas interface is suppressed when exposed to a steady axial magnetic field, measured by the Hartmann number Ha. As a result, detrimental flow instabilities are suppressed, and an almost quiescent region forms in the interior, ideal for single crystal growth. Using normal mode linear stability analyses, dominant flow instabilities are determined in a range applicable to experiments (up to Ha = 300 for Pr = 0.02, and up to Ha = 500 for Pr = 0.001). The hydrodynamic nature of the instability for small Prandtl number Pr liquid bridges is confirmed by energy analyses. Magnetic stirring is modeled for melt crystal growth in an ampule exposed to a transverse rotating magnetic field. Decoupled from the flow field at small magnetic Reynolds number, the electromagnetic field is first solved via finite element analysis. The flow field is then solved using the spectral element method. At low to moderate AC frequencies (up to a few kHz), the electromagnetic body force is dominant in the azimuthal direction, which stirs a steady axisymmetric flow primarily in the azimuthal direction. A weaker secondary flow develops in the meridional plane. However, at high AC frequencies (on the order of 10 kHz and higher), only

  3. Crystal growth and scintillation properties of selected fluoride crystals for VUV scintillators

    Czech Academy of Sciences Publication Activity Database

    Pejchal, Jan; Fukuda, K.; Yamaji, A.; Yokota, Y.; Kurosawa, S.; Král, Robert; Nikl, Martin; Yoshikawa, A.

    2014-01-01

    Roč. 401, Sep (2014), s. 833-838 ISSN 0022-0248. [International Conference on Crystal Growth and Epitaxy /17./. Warsaw, 11.08.2013-16..08.2013] R&D Projects: GA MŠk LH12150 Institutional support: RVO:68378271 Keywords : vacuum-ultra-violet emission * micro-pulling-down method * barium -lutetium fluoride * erbium fluoride Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.698, year: 2014

  4. Modeling Conformal Growth in Photonic Crystals and Comparing to Experiment

    Science.gov (United States)

    Brzezinski, Andrew; Chen, Ying-Chieh; Wiltzius, Pierre; Braun, Paul

    2008-03-01

    Conformal growth, e.g. atomic layer deposition (ALD), of materials such as silicon and TiO2 on three dimensional (3D) templates is important for making photonic crystals. However, reliable calculations of optical properties as a function of the conformal growth, such as the optical band structure, are hampered by difficultly in accurately assessing a deposited material's spatial distribution. A widely used approximation ignores ``pinch off'' of precursor gas and assumes complete template infilling. Another approximation results in non-uniform growth velocity by employing iso-intensity surfaces of the 3D interference pattern used to create the template. We have developed an accurate model of conformal growth in arbitrary 3D periodic structures, allowing for arbitrary surface orientation. Results are compared with the above approximations and with experimentally fabricated photonic crystals. We use an SU8 polymer template created by 4-beam interference lithography, onto which various amounts of TiO2 are grown by ALD. Characterization is performed by analysis of cross-sectional scanning electron micrographs and by solid angle resolved optical spectroscopy.

  5. Acquisition of Single Crystal Growth and Characterization Equipment. Final report

    International Nuclear Information System (INIS)

    Maple, M. Brian; Zocco, Diego A.

    2008-01-01

    Final Report for DOE Grant No. DE-FG02-04ER46178 'Acquisition of Single Crystal Growth and Characterization Equipment'. There is growing concern in the condensed matter community that the need for quality crystal growth and materials preparation laboratories is not being met in the United States. It has been suggested that there are too many researchers performing measurements on too few materials. As a result, many user facilities are not being used optimally. The number of proficient crystal growers is too small. In addition, insufficient attention is being paid to the enterprise of finding new and interesting materials, which is the driving force behind much of condensed matter research and, ultimately, technology. While a detailed assessment of this situation is clearly needed, enough evidence of a problem already exists to compel a general consensus that the situation must be addressed promptly. This final report describes the work carried out during the last four years in our group, in which a state-of-the-art single crystal growth and characterization facility was established for the study of novel oxides and intermetallic compounds of rare earth, actinide and transition metal elements. Research emphasis is on the physics of superconducting (SC), magnetic, heavy fermion (HF), non-Fermi liquid (NFL) and other types of strongly correlated electron phenomena in bulk single crystals. Properties of these materials are being studied as a function of concentration of chemical constituents, temperature, pressure, and magnetic field, which provide information about the electronic, lattice, and magnetic excitations at the root of various strongly correlated electron phenomena. Most importantly, the facility makes possible the investigation of material properties that can only be achieved in high quality bulk single crystals, including magnetic and transport phenomena, studies of the effects of disorder, properties in the clean limit, and spectroscopic and scattering

  6. Single Crystals of Organolead Halide Perovskites: Growth, Characterization, and Applications

    KAUST Repository

    Peng, Wei

    2017-04-01

    crystals will be discussed in Chapter 3 and 4. Despite their outstanding charge transport characteristics, organolead halide perovskite single crystals grown by hitherto reported crystallization methods are not suitable for most optoelectronic devices due to their small aspect ratios and free standing growth. As the other major part of work of this dissertation, explorative work on growing organolead halide perovskite monocrystalline films and further their application in solar cells will be discussed in Chapter 5.

  7. Phosphorus diffusion in float zone silicon crystal growth

    DEFF Research Database (Denmark)

    Larsen, Theis Leth

    2000-01-01

    This Ph.D thesis encompasses a global numerical simulation of the needle-eye oat zone process, used to grow silicon single crystals. The numerical models includes coupled electromagnetic and free surface models and a global heat transfer model, with moving boundaries. An axisymmetric uidow model......, including centrifugal, buoyancy, thermocapillary and electromagnetic forces, is used to determine flow field, after the phase boundaries have been determined, by the heat transfer model. A finite element model for calculating dopant transport, using the calculated unsteady flow field, has been developed...... within this project. This model has furthermore been expanded to two equations coupled by a non-zero right hand side, for simulating transport of point defects in the crystal during growth. Free surface shapes and induced electric surface current are calculated for t wo different 4'' congurations and a 0...

  8. Crystal plasticity modeling of irradiation growth in Zircaloy-2

    Science.gov (United States)

    Patra, Anirban; Tomé, Carlos N.; Golubov, Stanislav I.

    2017-08-01

    A physically based reaction-diffusion model is implemented in the visco-plastic self-consistent (VPSC) crystal plasticity framework to simulate irradiation growth in hcp Zr and its alloys. The reaction-diffusion model accounts for the defects produced by the cascade of displaced atoms, their diffusion to lattice sinks and the contribution to crystallographic strain at the level of single crystals. The VPSC framework accounts for intergranular interactions and irradiation creep, and calculates the strain in the polycrystalline ensemble. A novel scheme is proposed to model the simultaneous evolution of both, number density and radius, of irradiation-induced dislocation loops directly from experimental data of dislocation density evolution during irradiation. This framework is used to predict the irradiation growth behaviour of cold-worked Zircaloy-2 and trends compared to available experimental data. The role of internal stresses in inducing irradiation creep is discussed. Effects of grain size, texture and external stress on the coupled irradiation growth and creep behaviour are also studied and compared with available experimental data.

  9. Growth and structural, optical, and electrical properties of zincite crystals

    Science.gov (United States)

    Kaurova, I. A.; Kuz'micheva, G. M.; Rybakov, V. B.

    2013-03-01

    An X-ray diffraction study of ZnO crystals grown by the hydrothermal method has revealed reflections that give grounds to assign them to the sp. gr. P3 rather than to P63 mc. The distribution of Zn1, Zn2, O1, and O2 over structural positions, along with vacancies and incorporated zinc atoms, explains the dissymmetrization observed in terms of the kinetic (growth) phase transition of the order-disorder type, which is caused by ordering Zn and O atoms over structural positions. The color of crystals of refined compositions (Zn0.975□0.025)Zn i(0.015)(O0.990□0.010) (green) and (Zn0.965□0.035)Zn i(0.035)O (bright green) is related to different oxygen contents, which is confirmed by the results of electron probe X-ray microanalysis and absorption spectroscopy. The degree of the structural quality of crystals, their resistivity, and activation energy are also related to oxygen vacancies.

  10. Crystal growth of uranium compounds and study of UGe2

    International Nuclear Information System (INIS)

    Taufour, V.

    2011-01-01

    In this thesis, the study on the superconducting ferromagnet UGe 2 is presented. Crystal growth of UGe 2 single crystals was realized in a tetra-arc furnace using the Czochralski technique. This technique was also used to obtain high quality single crystals of other uranium compounds, notably UCoGe and URu 2 Si 2 . The Curie temperature of UGe 2 (T(Curie) = 53 K) decreases with pressure and is suppressed at p c = 1.5 GPa. Before being suppressed, the ferromagnetic transition changes from second to first order at a tricritical point. Precise resistivity and Hall resistivity measurements under pressure and magnetic field revealed the position of the tricritical point as well as its evolution under magnetic field which draw a wing structure phase diagram. Despite the theoretical prediction that this diagram is general for a ferromagnet, here we present the first experimental observation. Other measurements focus on the superconductivity (T sc = 0.75 K) which coexists with ferromagnetism under pressure. The bulk nature of the superconductivity is investigated by AC calorimetry measurements under pressure. The attention is turned to the interesting phenomenon of field enhanced superconductivity. (author) [fr

  11. Inclusion free cadmium zinc tellurium and cadmium tellurium crystals and associated growth method

    Science.gov (United States)

    Bolotnikov, Aleskey E [South Setauket, NY; James, Ralph B [Ridge, NY

    2010-07-20

    The present disclosure provides systems and methods for crystal growth of cadmium zinc tellurium (CZT) and cadmium tellurium (CdTe) crystals with an inverted growth reactor chamber. The inverted growth reactor chamber enables growth of single, large, high purity CZT and CdTe crystals that can be used, for example, in X-ray and gamma detection, substrates for infrared detectors, or the like. The inverted growth reactor chamber enables reductions in the presence of Te inclusions, which are recognized as an important limiting factor in using CZT or CdTe as radiation detectors. The inverted growth reactor chamber can be utilized with existing crystal growth techniques such as the Bridgman crystal growth mechanism and the like. In an exemplary embodiment, the inverted growth reactor chamber is a U-shaped ampoule.

  12. Crystal Growth of New Radiation Detector Materials in Microgravity, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — RMD proposes to conduct a series of crystal growth experiments on the International Space Station in the SUBSA furnace inside the MSG glovebox to grow crystals of...

  13. Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate

    International Nuclear Information System (INIS)

    Imura, M.; Honshio, A.; Miyake, Y.; Nakano, K.; Tsuchiya, N.; Tsuda, M.; Okadome, Y.; Balakrishnan, K.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

    2006-01-01

    High-quality (112-bar 0) GaN layers with atomically flat surface have been grown on a precisely offset-angle-controlled (11-bar 02) sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Insertion of AlGaN layer between underlying AlN layer and GaN was found to improve crystalline quality of upper GaN layer. In addition, a combination of high growth condition followed and epitaxial lateral overgrowth has been employed for the growth of GaN and this helped in reducing the dislocation density in the resultant layers. GaN and AlN were grown on (303-bar 8) SiC substrates by MOVPE and sublimation methods, respectively. The crystal orientation of GaN and AlN could be just aligned to that of the substrate. Microstructure analysis of the layers was also carried out by transmission electron microscopy

  14. SERS Raman Sensor Based on Diameter-Modulated Sapphire Fiber

    Energy Technology Data Exchange (ETDEWEB)

    Shimoji, Yutaka

    2010-08-09

    Surface enhanced Raman scattering (SERS) has been observed using a sapphire fiber coated with gold nano-islands for the first time. The effect was found to be much weaker than what was observed with a similar fiber coated with silver nanoparticles. Diameter-modulated sapphire fibers have been successfully fabricated on a laser heated pedestal growth system. Such fibers have been found to give a modest increase in the collection efficiency of induced emission. However, the slow response of the SERS effect makes it unsuitable for process control applications.

  15. An atomic-scale model of fcc crystal-growth

    Energy Technology Data Exchange (ETDEWEB)

    Waal, B.W. van de (Technische Hogeschool Twente, Enschede (Netherlands). Dept. of Physics)

    1991-01-01

    Nearly perfect fcc growth may be simulated by the application of a simple growth-algorithm - only sites that are at least 4-coordinated are occupied - to a selected seed. The seed is a 22-atom cluster, being the smallest close-packed structure with two crossing stacking-faults. The stacking-faults produce active surface-sites, that can not be exhausted by occupation; they are arranged in non-vanishing steps, similar to those produced by screw-dislocations. The algorithm prevents further stacking-faults, and ensures ABC-stacking of close-packed (111)-layers, characteristic of the fcc structure. The same algorithm would not produce further growth of perfect fcc clusters or of Mackay icosahedra. It is proposed that the ability to grow fast under near-equilibrium conditions is a better criterion to select clusters as precursors of the bulk-structure than their cohesive energy. The crystal structure problem of the rare gases - why fcc, not hcp - is discussed in connection with the apparent impossibility to simulate hcp growth by an analogous procedure. (orig.).

  16. Self-limiting growth of ZnO films on (0 0 0 1) sapphire substrates by atomic layer deposition at low temperatures using diethyl-zinc and nitrous oxide

    International Nuclear Information System (INIS)

    Lin, Yen-Ting; Chung, Ping-Han; Lai, Hung-Wei; Su, Hsin-Lun; Lyu, Dong-Yuan; Yen, Kuo-Yi; Lin, Tai-Yuan; Kung, Chung-Yuan; Gong, Jyh-Rong

    2009-01-01

    Atomic layer deposition (ALD) of zinc oxide (ZnO) films on (0 0 0 1) sapphire substrates was conducted at low temperatures by using diethyl-zinc (DEZn) and nitrous oxide (N 2 O) as precursors. It was found that a monolayer-by-monolayer growth regime occurred at 300 deg. C in a range of DEZn flow rates from 5.7 to 8.7 μmol/min. Furthermore, the temperature self-limiting process window for the ALD-grown ZnO films was also observed ranging from 290 to 310 deg. C. A deposition mechanism is proposed to explain how saturated growth of ZnO is achieved by using DEZn and N 2 O. Transmission spectroscopic studies of the ZnO films prepared in the self-limiting regime show that the transmittances of ZnO films are as high as 80% in visible and near infrared spectra. Experimental results indicate that ZnO films with high optical quality can be achieved by ALD at low temperatures using DEZn and N 2 O precursors.

  17. Optimized Pyroelectric Vidicon Thermal Imager. Volume II. Improper Ferroelectric Crystal Growth.

    Science.gov (United States)

    1980-09-01

    4.2.1 Apparatus .......................... 77 4.2.2 Growth from Acidic Media .................o 78 4.2.3 Hydrothermal Growth in Basic Media ...... 99...method of hydrothermal growth was examined using both acidic and basic solvents. (1) Standard Composition Our standard composition was derived from... Acid 10 Good, well formed crystals. Acrylic Acid 10 Very good, clear crystals. Glycine 10 Poor crystals. Oxalic Acid 10 Precipitation of calcium and

  18. EFFECT OF SODIUM DODECYLBENZENESULFONIC ACID (SDBS ON THE GROWTH RATE AND MORPHOLOGY OF BORAX CRYSTAL

    Directory of Open Access Journals (Sweden)

    Suharso Suharso

    2010-06-01

    Full Text Available An investigation of the effect of sodium dodecylbenzenesulfonic acid (SDBS on both growth rate and morphology of borax crystal has been carried out.  This experiment was carried out at temperature of 25 °C and relative supersaturation of 0.21 and 0.74 under in situ cell optical microscopy method.  The result shows that SDBS inhibits the growth rate and changes the morphology of borax crystal.   Keywords: Borax; growth rate; crystallization, SDBS

  19. The performance studies of DKDP crystals grown by a rapid horizontal growth method

    Science.gov (United States)

    Xie, Xiaoyi; Qi, Hongji; Wang, Bin; Wang, Hu; Chen, Duanyang; Shao, Jianda

    2018-04-01

    A deuterated potassium dihydrogen phosphate (DKDP) crystal with about 70% deuterium level was grown by a rapid horizontal growth method with independent design equipment, which includes a continuous filtration system. The cooling program during crystal growth was designed according to a self-developed software to catch the size of growing crystal in real time. The crystal structure, optical performance and laser induced damage threshold (LIDT) of this DKDP crystal were investigated in this paper. The deuterium concentration of the crystal was confirmed by the neutron diffraction technique, which was effective and available in determining a complete range of deuteration level. The dielectric property was measured to evaluate the perfection of the lattice. The transmittance and LIDT were carried out further to evaluate the optical and functional properties of this DKDP crystal grown in the rapid horizontal growth technique. All of the detailed characterization for DKDP figured out that the 70% deuterated KDP crystal grown in this way had relatively good qualities.

  20. Investigation of grain competitive growth during directional solidification of single-crystal nickel-based superalloys

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xinbao [National Energy R and D Center of Clean and High-Efficiency Fossil-Fired Power Generation Technology, Xi' an Thermal Power Research Institute Co. Ltd., Xi' an (China); Northwestern Polytechnical University, State Key Laboratory of Solidification Processing, Xi' an (China); Liu, Lin; Zhang, Jun [Northwestern Polytechnical University, State Key Laboratory of Solidification Processing, Xi' an (China)

    2015-08-15

    Grain competitive growth of nickel-based single-crystal superalloys during directional solidification was investigated. A detailed characterization of bi-crystals' competitive growth was performed to explore the competitive grain evolution. It was found that high withdrawal rate improved the efficiency of grain competitive growth. The overgrowth rate was increased when the misorientation increased. Four patterns of grain competitive growth with differently oriented dispositions were characterized. The results indicated that the positive branching of the dendrites played a significant role in the competitive growth process. The effect of crystal orientation and heat flow on the competitive growth can be attributed to the blocking mechanism between the adjacent grains. (orig.)

  1. Growth of cadmium oxide whiskers on cadmium sulphide single crystals with copper as growth activator

    Energy Technology Data Exchange (ETDEWEB)

    Koparanova, N.; Simov, S. (Bylgarska Akademiya na Naukite, Sofia. Inst. po Fizika na Tvyrdoto Tyalo); Genchev, D. (Bylgarska Akademiya na Naukite, Sofia. Inst. za Yadrena Izsledvaniya i Yadrena Energetika); Metchenov, G. (Research Inst. of Criminalistics and Criminology, Sofia (Bulgaria))

    1985-02-01

    Some results on the growth and morphology of cadmium oxide whiskers, obtained on cadmium sulphide single crystals with copper as a growth activator, are presented in this work. Cadmium oxide whiskers have been obtained on brace 112-bar0 brace faces of cadmium sulphide plates with a copper layer deposited in advance. The whiskers grew during the annealing of the plates in a weak stream of technically pure argon at temperatures 670 to 730 deg C for 15 min to 3.5 h. Details about the procedure have been given elsewhere. The composition and morphology of the whiskers have been studied by an X-ray microanalyser JEOL 35 DDS and a scanning electron microscope JEOL, JSM 35. The optical microscopic observations have shown that after annealing, a gray-black granular layer is formed on the cadmium sulphide single crystals and this layer can easily be separated from the crystal substrate. Under the granular layer the crystal is heavily damaged. The whiskers grow on the granular layer and they are coloured yellow-brown or red-brown. The maximum whisker length attains several hundreds of micrometres and in some cases up to 1 mm or more.

  2. Growth of cadmium oxide whiskers on cadmium sulphide single crystals with copper as growth activator

    International Nuclear Information System (INIS)

    Koparanova, N.; Simov, S.

    1985-01-01

    Some results on the growth and morphology of cadmium oxide whiskers, obtained on cadmium sulphide single crystals with copper as a growth activator, are presented in this work. Cadmium oxide whiskers have been obtained on brace 112-bar0 brace faces of cadmium sulphide plates with a copper layer deposited in advance. The whiskers grew during the annealing of the plates in a weak stream of technically pure argon at temperatures 670 to 730 deg C for 15 min to 3.5 h. Details about the procedure have been given elsewhere. The composition and morphology of the whiskers have been studied by an X-ray microanalyser JEOL 35 DDS and a scanning electron microscope JEOL, JSM 35. The optical microscopic observations have shown that after annealing, a gray-black granular layer is formed on the cadmium sulphide single crystals and this layer can easily be separated from the crystal substrate. Under the granular layer the crystal is heavily damaged. The whiskers grow on the granular layer and they are coloured yellow-brown or red-brown. The maximum whisker length attains several hundreds of micrometres and in some cases up to 1 mm or more. (author)

  3. Growth, morphology, spectral and thermal studies of gel grown diclofenac acid crystals

    Science.gov (United States)

    Ramachandran, E.; Ramukutty, S.

    2014-03-01

    The crystal growth of diclofenac acid in silica gel is the first to be reported in literature. The growth parameters were varied to optimize the suitable growth condition. Single crystal X-ray diffraction method was used for the conformation of the crystal structure. Morphology studies showed that the growth is prominent along the b-axis and the prominent face is {002}. Fourier transform infrared spectral study was performed to identify the functional groups present in the crystal. Thermal stability and decomposition of the material were analyzed using thermo calorimetry in the temperature range 30-500 °C.

  4. Ti:Sapphire waveguide lasers

    NARCIS (Netherlands)

    Pollnau, Markus; Pashinin, P.P.; Grivas, C.; Laversenne, L.; Wilkinson, J.S.; Eason, R.W.; Shepherd, D.P.

    2007-01-01

    Titanium-doped sapphire is one of the most prominent laser materials and is appreciated for its excellent heat conductivity and broadband gain spectrum, allowing for a wide wavelength tunability and generation of ultrashort pulses. As one of the hardest materials, it can also serve as a model system

  5. Diffusion and crystal growth in plasma deposed thin ITO films

    International Nuclear Information System (INIS)

    Steffen, H.; Wulff, H.; Quaas, M.; Tun, Tin Maung.; Hipple, R.

    2000-01-01

    Tin-doped indium oxide (ITO) films were deposited by means of DC-planar magnetron sputtering. A metallic In/Sn (90/10) target an Ar/O 2 gas mixture were used. The oxygen flow was varied between 0 and 2 sccm. Substrate voltages between 0 and -100 V were used. With increasing oxygen flow film structure and composition change from crystalline metallic In/Sn to amorphous ITO. Simultaneously the deposition rate decreases and the film density increases. The diffusion of oxygen into metallic In/Sn films and the amorphous-to-crystalline transformation of ITO were studied using in situ grazing incidence X-ray diffractometry (GIXRD), grazing incidence reflectometry (GIXR), and AFM. From the X-ray integral intensities diffusion constants, activation energies of the diffusion, reaction order and activation energy of the crystal growth were extracted. (authors)

  6. Crystal Growth and Other Materials Physical Researches in Space Environment

    Science.gov (United States)

    Pan, Mingxiang

    Material science researches in space environment are based on reducing the effects of buoyancy driven transport, the effects of atomic oxygen, radiation, extremes of heat and cold and the ultrahigh vacuum, so as to unveil the underlying fundamental phenomena, lead maybe to new potential materials or new industrial processes and develop space techniques. Currently, research program on materials sciences in Chinese Manned Space Engineering (CMSE) is going on. More than ten projects related to crystal growth and materials processes are selected as candidates to be executed in Shenzhou spacecraft, Tiangong Space Laboratory and Chinese Space Station. In this talk, we will present some examples of the projects, which are being prepared and executed in the near future flight tasks. They are both basic and applied research, from discovery to technology.

  7. Growth of single-crystal YAG fiber optics.

    Science.gov (United States)

    Nie, Craig D; Bera, Subhabrata; Harrington, James A

    2016-07-11

    Single-crystal YAG (Y3Al5O12) fibers have been grown by the laser heated pedestal growth technique with losses as low as 0.3 dB/m at 1.06 μm. These YAG fibers are as long as about 60 cm with diameters around 330 μm. The early fibers were grown from unoriented YAG seed fibers and these fibers exhibited facet steps or ridges on the surface of the fiber. However, recently we have grown fibers using an oriented seed to grow step-free fibers. Scattering losses made on the fibers indicate that the scattering losses are equal to about 30% of the total loss.

  8. Growth and Characterization of ZnTe Crystal

    International Nuclear Information System (INIS)

    Nann Thazin

    2011-12-01

    High quality ZnTe crystals have been synthesized by vapor Transport method. The grown crystals were p-type. The concentration and mobility were 2.5 x 10 16 cm-3 and 23 cm2/Vs at 300K, according to Hall effect measurements. Surface morphology of the crystal was investigated by scanning electron microscope (SEM). Crystal orientation and lattice parameters of the crystals were also analysed by XRD. From X-ray diffraction studies the structure of the grown crystals were found to be zinc-blende. The crystal emitted light in the visible range at room temperature.

  9. Visual observation of gas hydrates nucleation and growth at a water - organic liquid interface

    Science.gov (United States)

    Stoporev, Andrey S.; Semenov, Anton P.; Medvedev, Vladimir I.; Sizikov, Artem A.; Gushchin, Pavel A.; Vinokurov, Vladimir A.; Manakov, Andrey Yu.

    2018-03-01

    Visual observation of nucleation sites of methane and methane-ethane-propane hydrates and their further growth in water - organic liquid - gas systems with/without surfactants was carried out. Sapphire Rocking Cell RCS6 with transparent sapphire cells was used. The experiments were conducted at the supercooling ΔTsub = 20.2 °C. Decane, toluene and crude oils were used as organics. Gas hydrate nucleation occurred on water - metal - gas and water - sapphire - organic liquid three-phase contact lines. At the initial stage of growth hydrate crystals rapidly covered the water - gas or water - organics interfaces (depending on the nucleation site). Further hydrate phase accrete on cell walls (sapphire surface) and into the organics volume. At this stage, growth was accompanied by water «drawing out» from under initial hydrate film formed at water - organic interface. Apparently, it takes place due to water capillary inflow in the reaction zone. It was shown that the hydrate crystal morphology depends on the organic phase composition. In the case of water-in-decane emulsion relay hydrate crystallization was observed in the whole sample, originating most likely due to the hydrate crystal intergrowth through decane. Contacts of such crystals with adjacent water droplets result in rapid hydrate crystallization on this droplet.

  10. Crystal growth iron based pnictide compounds; Kristallzuechtung eisenbasierter Pniktidverbindungen

    Energy Technology Data Exchange (ETDEWEB)

    Nacke, Claudia

    2012-11-15

    The present work is concerned with selected crystal growth method for producing iron-based superconductors. The first part of this work introduces significant results of the crystal growth of BaFe{sub 2}As{sub 2} and the cobalt-substituted compound Ba(Fe{sub 1-x}Co{sub x}){sub 2}As{sub 2} with x{sub Nom} = 0.025, 0.05, 0.07, 0.10 and 0.20. For this purpose a test procedure for the vertical Bridgman method was developed. The second part of this work contains substantial results for growing a crystal of LiFeAs and the nickel-substituted compound Li{sub 1-δ}Fe{sub 1-x}Ni{sub x}As with x{sub Nom} = 0.015, 0.025, 0.05, 0.06, 0.075 and 0.10. For this purpose a test procedure for the melt flow process has been developed successfully. [German] Die vorliegende Arbeit befasst sich mit ausgewaehlten Kristallzuechtungsverfahren zur Herstellung eisenbasierter Supraleiter. Der erste Teil dieser Arbeit fuehrt wesentliche Ergebnisse der Kristallzuechtung von BaFe{sub 2}As{sub 2} sowie der Cobalt-substituierten Verbindung Ba(Fe{sub 1-x}Co{sub x}){sub 2}As{sub 2} mit x{sub Nom} =0.025, 0.05, 0.07, 0.10 und 0.20 auf. Hierzu wurde eine Versuchsdurchfuehrung fuer das vertikale Bridgman-Verfahren konzipiert, mit welcher erfolgreich Kristalle dieser Zusammensetzungen gezuechtet wurden. Der zweite Teil dieser Arbeit enthaelt wesentliche Ergebnisse zur Kristallzuechtung von LiFeAs sowie der Nickel-substituierten Verbindung Li{sub 1-δ}Fe{sub 1-x}Ni{sub x}As mit x{sub Nom} = 0.015, 0.025, 0.05, 0.06, 0.075 und 0.10. Hierfuer wurde erfolgreich eine Versuchsdurchfuehrung fuer das Schmelzfluss-Verfahren entwickelt.

  11. Impact of interaction range and curvature on crystal growth of particles confined to spherical surfaces

    NARCIS (Netherlands)

    Paquay, S.; Both, G.-J.; Van Der Schoot, P.P.A.M.

    2017-01-01

    When colloidal particles form a crystal phase on a spherical template, their packing is governed by the effective interaction between them and the elastic strain of bending the growing crystal. For example, if growth commences under appropriate conditions, and the isotropic crystal that forms

  12. Development of frequency tunable Ti:sapphire laser and dye laser pumped by a pulsed Nd:YAG laser

    International Nuclear Information System (INIS)

    Yi, Jong Hoon; Horn, Roland; Wendt, K.

    2001-01-01

    We investigated lasing characteristics of two kinds of tunable laser, liquid dye laser and solid Ti:sapphire crystal laser, pumped by high pulse repetition rate Nd:YAG laser. Dye laser showed drastically reduced pulsewidth compared with that of pump laser and it also contained large amount of amplified spontaneous emission. Ti:sapphire laser showed also reduced pulsewidth. But, the laser conversion pump laser and Ti:sapphire laser pulse, we used a Brewster-cut Pockel's cell for Q-switching. The laser was frequency doubled by a type I BBO crystal outside of the cavity.

  13. Approach for growth of high-quality and large protein crystals

    Energy Technology Data Exchange (ETDEWEB)

    Matsumura, Hiroyoshi, E-mail: matsumura@chem.eng.osaka-u.ac.jp [Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871 (Japan); JST (Japan); SOSHO Inc., Osaka 541-0053 (Japan); Sugiyama, Shigeru; Hirose, Mika; Kakinouchi, Keisuke; Maruyama, Mihoko; Murai, Ryota [Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871 (Japan); JST (Japan); Adachi, Hiroaki; Takano, Kazufumi [Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871 (Japan); JST (Japan); SOSHO Inc., Osaka 541-0053 (Japan); Murakami, Satoshi [JST (Japan); SOSHO Inc., Osaka 541-0053 (Japan); Graduate School of Bioscience and Biotechnology, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8501 (Japan); Mori, Yusuke; Inoue, Tsuyoshi [Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871 (Japan); JST (Japan); SOSHO Inc., Osaka 541-0053 (Japan)

    2011-01-01

    Three crystallization methods, including crystallization in the presence of a semi-solid agarose gel, top-seeded solution growth (TSSG) and a large-scale hanging-drop method, have previously been presented. In this study, crystallization has been further evaluated in the presence of a semi-solid agarose gel by crystallizing additional proteins. A novel crystallization method combining TSSG and the large-scale hanging-drop method has also been developed. Three crystallization methods for growing large high-quality protein crystals, i.e. crystallization in the presence of a semi-solid agarose gel, top-seeded solution growth (TSSG) and a large-scale hanging-drop method, have previously been presented. In this study the effectiveness of crystallization in the presence of a semi-solid agarose gel has been further evaluated by crystallizing additional proteins in the presence of 2.0% (w/v) agarose gel, resulting in complete gelification with high mechanical strength. In TSSG the seed crystals are hung by a seed holder protruding from the top of the growth vessel to prevent polycrystallization. In the large-scale hanging-drop method, a cut pipette tip was used to maintain large-scale droplets consisting of protein–precipitant solution. Here a novel crystallization method that combines TSSG and the large-scale hanging-drop method is reported. A large and single crystal of lysozyme was obtained by this method.

  14. Multilayered structures of (RE = rare earth)Ba2Cu3Ox films: an approach for the growth of superior quality large-area superconducting films on sapphire substrates

    International Nuclear Information System (INIS)

    Develos-Bagarinao, K; Yamasaki, H; Ohki, K; Nakagawa, Y

    2007-01-01

    Relatively thick REBa 2 Cu 3 O 7-δ (RE = rare earth) films (thickness ∼400-600 nm) with significantly improved surface morphology and critical current properties using a multilayered structure which alternates main layers of YBa 2 Cu 3 O 7-δ (YBCO) with intermediate DyBa 2 Cu 3 O 7-δ (DyBCO) layers on CeO 2 -buffered sapphire substrates were investigated. The DyBCO layer, which has a close lattice matching with YBCO, functions as a good starting template for the growth of high-quality YBCO layers. Critical current density (J c ) drastically increased up to a factor of 2 for YBCO/DyBCO multilayer films, compared to YBCO monolayer films in both the self-field and applied magnetic field. The significant improvement in J c is attributed to the improvement of surface smoothness and enhanced flux pinning properties as revealed by the magnetic-field angular dependence of J c . (rapid communication)

  15. Synthesis, crystal growth, optical, thermal, and mechanical properties of a nonlinear optical single crystal: ammonium sulfate hydrogen sulphamate (ASHS)

    Science.gov (United States)

    Sudhakar, K.; Nandhini, S.; Muniyappan, S.; Arumanayagam, T.; Vivek, P.; Murugakoothan, P.

    2018-04-01

    Ammonium sulfate hydrogen sulphamate (ASHS), an inorganic nonlinear optical crystal, was grown from the aqueous solution by slow evaporation solution growth technique. The single-crystal XRD confirms that the grown single crystal belongs to the orthorhombic system with the space group of Pna21. Powder XRD confirms the crystalline nature and the diffraction planes were indexed. Crystalline perfection of grown crystal was analysed by high-resolution X-ray diffraction rocking curve technique. UV-Vis-NIR studies revealed that ASHS crystal has optical transparency 65% and lower cut-off wavelength at 218 nm. The violet light emission of the crystal was identified by photoluminescence studies. The particle size-dependent second-harmonic generation efficiency for ASHS crystal was evaluated by Kurtz-Perry powder technique using Nd:YAG laser which established the existence of phase matching. Surface laser damage threshold value was evaluated using Nd:YAG laser. Optical homogeneity of the crystal was evaluated using modified channel spectrum method through birefringence study. Thermal analysis reveals that ASHS crystal is stable up to 213 °C. The mechanical behaviour of the ASHS crystal was analysed using Vickers microhardness study.

  16. Formation and growth mechanism of TiC crystal in TiCp/Ti composites

    Institute of Scientific and Technical Information of China (English)

    金云学; 王宏伟; 曾松岩; 张二林

    2002-01-01

    Ti-C and Ti-Al-C alloys were prepared using gravity and directional solidification processes. Morphologies of TiC crystal were investigated by using SEM, XRD and EDX. Also, the formation and growth mechanism of TiC crystal have been analyzed on the basis of coordination polyhedron growth unit theory. During solidification of titanium alloys, the coordination polyhedron growth unit is TiC6. TiC6 growth units stack in a linking mode of edge to edge and form octahedral TiC crystal with {111} planes as present faces. Although the growing geometry of TiC crystal is decided by its lattice structure, the final morphology of TiC crystal depends on the effects of its growth environment. In solute concentration distribution, the super-saturation of C or TiC6 at the corners of octahedral TiC crystal is much higher than that of edges and faces of octahedral TiC crystal. At these corners the driving force for crystal growth is greater and the interface is instable which contribute to quick stacking rate of growth units at these corners and result in secondary dendrite arms along TiC crystallographic 〈100〉 directions. TiC crystal finally grows to be dendrites.

  17. Crystal growth of new charge-transfer salts based on π-conjugated donor molecules

    Energy Technology Data Exchange (ETDEWEB)

    Morherr, Antonia, E-mail: morherr@stud.uni-frankfurt.de [Physikalisches Institut, Goethe-Universität Frankfurt am Main, 60438 Frankfurt am Main (Germany); Witt, Sebastian [Physikalisches Institut, Goethe-Universität Frankfurt am Main, 60438 Frankfurt am Main (Germany); Chernenkaya, Alisa [Graduate School Materials Science in Mainz, 55128 Mainz (Germany); Institut für Physik, Johannes Gutenberg-Universität, 55099 Mainz (Germany); Bäcker, Jan-Peter [Physikalisches Institut, Goethe-Universität Frankfurt am Main, 60438 Frankfurt am Main (Germany); Schönhense, Gerd [Institut für Physik, Johannes Gutenberg-Universität, 55099 Mainz (Germany); Bolte, Michael [Institut für anorganische Chemie, Goethe-Universität Frankfurt am Main, 60438 Frankfurt am Main (Germany); Krellner, Cornelius [Physikalisches Institut, Goethe-Universität Frankfurt am Main, 60438 Frankfurt am Main (Germany)

    2016-09-01

    New charge transfer crystals of π-conjugated, aromatic molecules (phenanthrene and picene) as donors were obtained by physical vapor transport. The melting behavior, optimization of crystal growth and the crystal structure are reported for charge transfer salts with (fluorinated) tetracyanoquinodimethane (TCNQ-F{sub x}, x=0, 2, 4), which was used as acceptor material. The crystal structures were determined by single-crystal X-ray diffraction. Growth conditions for different vapor pressures in closed ampules were applied and the effect of these starting conditions for crystal size and quality is reported. The process of charge transfer was investigated by geometrical analysis of the crystal structure and by infrared spectroscopy on single crystals. With these three different acceptor strengths and the two sets of donor materials, it is possible to investigate the distribution of the charge transfer systematically. This helps to understand the charge transfer process in this class of materials with π-conjugated donor molecules.

  18. Growth and surface topography of WSe_2 single crystal

    International Nuclear Information System (INIS)

    Dixit, Vijay; Vyas, Chirag; Pataniya, Pratik; Jani, Mihir; Pathak, Vishal; Patel, Abhishek; Pathak, V. M.; Patel, K. D.; Solanki, G. K.

    2016-01-01

    Tungsten Di-Selenide belongs to the family of TMDCs showing their potential applications in the fields of Optoelectronics and PEC solar cells. Here in the present investigation single crystals of WSe_2 were grown by Direct Vapour Transport Technique in a dual zone furnace having temperature difference of 50 K between the two zones. These single crystals were characterized by EDAX which confirms the stiochiometry of the grown crystals. Surface topography of the crystal was studied by optical micrograph showing the left handed spirals on the surface of WSe_2 crystals. Single crystalline nature of the crystals was confirmed by SAED.

  19. ICCG-10: Tenth International Conference on Crystal Growth. Poster presentation abstracts

    Science.gov (United States)

    1992-01-01

    Poster presentation abstracts from the tenth International Conference on Crystal Growth (ICCG) (Aug. 16-21, 1992) are provided. Topics discussed at the conference include crystal growth mechanisms, superconductors, semiconductors, laser materials, optical materials, and biomaterials. Organizing committees, ICCG advisory board and officers, and sponsors of the conference are also included.

  20. Homogeneous SiGe crystal growth in microgravity by the travelling liquidus-zone method

    International Nuclear Information System (INIS)

    Kinoshita, K; Arai, Y; Inatomi, Y; Sakata, K; Takayanagi, M; Yoda, S; Miyata, H; Tanaka, R; Sone, T; Yoshikawa, J; Kihara, T; Shibayama, H; Kubota, Y; Shimaoka, T; Warashina, Y

    2011-01-01

    Homogeneous SiGe crystal growth experiments will be performed on board the ISS 'Kibo' using a gradient heating furnace (GHF). A new crystal growth method invented for growing homogeneous mixed crystals named 'travelling liquidus-zone (TLZ) method' is evaluated by the growth of Si 0.5 Ge 0.5 crystals in space. We have already succeeded in growing homogeneous 2mm diameter Si 0.5 Ge 0.5 crystals on the ground but large diameter homogeneous crystals are difficult to be grown due to convection in a melt. In microgravity, larger diameter crystals can be grown with suppressing convection. Radial concentration profiles as well as axial profiles in microgravity grown crystals will be measured and will be compared with our two-dimensional TLZ growth model equation and compositional variation is analyzed. Results are beneficial for growing large diameter mixed crystals by the TLZ method on the ground. Here, we report on the principle of the TLZ method for homogeneous crystal growth, results of preparatory experiments on the ground and plan for microgravity experiments.

  1. Solid-melt interface structure and growth of Cu alloy single crystals

    International Nuclear Information System (INIS)

    Tomimitsu, Hiroshi; Kamada, Kohji.

    1983-01-01

    Crystal-melt interface behavior during the growth of Cu-base solid solutions by the Bridgman method is discussed on the basis of experimental evidence obtained by neutron diffraction topography. Advantages of neutron diffraction topography for the characterization of large single crystals, such as dealt with in this paper, are emphasized. Evidence was odserved of extremely regular crystal growth along directions, irrespective of the macroscopic growth direction. This contrasts with the previously believed (110) normal growth which is a conclusion of growth theory based on molecular kinetics at the solid-melt interface. In consequence, we believe that the kinetics at the interface is a minor factor in the meltgrowth of metal single crystals. Revised melt-growth theory should include both the growth and the formation of the regular structure as evidenced by neutron diffraction topography. (author)

  2. Single Crystals of Organolead Halide Perovskites: Growth, Characterization, and Applications

    KAUST Repository

    Peng, Wei

    2017-01-01

    Despite their outstanding charge transport characteristics, organolead halide perovskite single crystals grown by hitherto reported crystallization methods are not suitable for most optoelectronic devices due to their small aspect ratios

  3. Growth and characterization of nonlinear optical single crystals: bis ...

    Indian Academy of Sciences (India)

    Administrator

    molecules have received great attention for NLO applica- tions. However ... Figure 3. Single crystals of bis(cyclohexylammonium) terephthalate (crystal a) and cyclohexylammo- .... from ground state to higher energy states.17 Optical window ...

  4. Order in nanometer thick intergranular films at Au-sapphire interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Baram, Mor [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Garofalini, Stephen H. [Department of Materials Science and Engineering, Rutgers University, Piscataway, NJ 08854-8065 (United States); Kaplan, Wayne D., E-mail: kaplan@tx.technion.ac.il [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

    2011-08-15

    Highlights: {yields} Au particles were equilibrated on (0 0 0 1) sapphire in the presence of anorthite. {yields} 1.2 nm thick equilibrium films (complexions) were formed at the Au-sapphire interfaces. {yields} Quantitative HRTEM was used to study the atomistic structure of the films. {yields} Structural order was observed in the 1.2 nm thick films adjacent to the sapphire crystal. {yields} This demonstrates that ordering is an intrinsic part of equilibrium intergranular films. - Abstract: In recent years extensive studies on interfaces have shown that {approx}1 nm thick intergranular films (IGF) exist at interfaces in different material systems, and that IGF can significantly affect the materials' properties. However, there is great deal of uncertainty whether such films are amorphous or partially ordered. In this study specimens were prepared from Au particles that were equilibrated on sapphire substrates in the presence of anorthite glass, leading to the formation of 1.2 nm thick IGF at the Au-sapphire interfaces. Site-specific cross-section samples were characterized using quantitative high resolution transmission electron microscopy to study the atomistic structure of the films. Order was observed in the 1.2 nm thick films adjacent to the sapphire crystal in the form of 'Ca cages', experimentally demonstrating that ordering is an intrinsic part of IGF, as predicted from molecular dynamics and diffuse interface theory.

  5. Laboratory studies on the uptake of aromatic hydrocarbons by ice crystals during vapor depositional crystal growth

    Science.gov (United States)

    Fries, Elke; Starokozhev, Elena; Haunold, Werner; Jaeschke, Wolfgang; Mitra, Subir K.; Borrmann, Stephan; Schmidt, Martin U.

    Uptake of aromatic hydrocarbons (AH) by ice crystals during vapor deposit growth was investigated in a walk-in cold chamber at temperatures of 242, 251, and 260 K, respectively. Ice crystals were grown from ambient air in the presence of gaseous AH namely: benzene (C 6H 6), toluene (methylbenzene, C 7H 8), the C 8H 10 isomers ethylbenzene, o-, m-, p-xylene (dimethylbenzenes), the C 9H 12 isomers n-propylbenzene, 4-ethyltoluene, 1,3,5-trimethylbenzene (1,3,5-TMB), 1,2,4-trimethylbenzene (1,2,4-TMB), 1,2,3-trimethylbenzene (1,2,3-TMB), and the C 10H 14 compound tert.-butylbenzene. Gas-phase concentrations calculated at 295 K were 10.3-20.8 μg m -3. Uptake of AH was detected by analyzing vapor deposited ice with a very sensitive method composed of solid-phase micro-extraction (SPME), followed by gas chromatography/mass spectrometry (GC/MS). Ice crystal size was lower than 1 cm. At water vapor extents of 5.8, 6.0 and 8.1 g m -3, ice crystal shape changed with decreasing temperatures from a column at a temperature of 260 K, to a plate at 251 K, and to a dendrite at 242 K. Experimentally observed ice growth rates were between 3.3 and 13.3×10 -3 g s -1 m -2 and decreased at lower temperatures and lower value of water vapor concentration. Predicted growth rates were mostly slightly higher. Benzene, toluene, ethylbenzene, and xylenes (BTEX) were not detected in ice above their detection limits (DLs) of 25 pg g ice-1 (toluene, ethylbenzene, xylenes) and 125 pg g ice-1 (benzene) over the entire temperature range. Median concentrations of n-propylbenzene, 4-ethyltoluene, 1,3,5-TMB, tert.-butylbenzene, 1,2,4-TMB, and 1,2,3-TMB were between 4 and 176 pg g ice-1 at gas concentrations of 10.3-10.7 μg m -3 calculated at 295 K. Uptake coefficients ( K) defined as the product of concentration of AH in ice and density of ice related to the product of their concentration in the gas phase and ice mass varied between 0.40 and 10.23. K increased with decreasing temperatures. Values of

  6. Growth and time dependent alignment of KCl crystals in Hemoglobin LB monolayer

    International Nuclear Information System (INIS)

    Mahato, Mrityunjoy; Pal, Prabir; Tah, Bidisha; Kamilya, Tapanendu; Talapatra, G.B.

    2012-01-01

    Nature and organism often use the biomineralization technique to build up various highly regular structures such as bone, teeth, kidney stone etc., and recently this becomes the strategy to design and synthesis of novel biocomposite materials. We report here the controlled crystallization of KCl in Langmuir and Langmuir Blodgett (LB) monolayer of Hemoglobin (Hb) at ambient condition. The nucleation and growth of KCl crystals in Hb monolayer has temporal and KCl concentration dependency. The growth of KCl crystals in LB film of Hb has distinct behavior in the alignment of crystals from linear to fractal like structures depending on growth time. The crystallographic identity of the biomineralized KCl crystal is confirmed from HR-TEM, XRD, and from powder diffraction simulation. Our results substantiated that the template of Langmuir monolayer of proteins plays a crucial role in biomineralization as well as in designing and synthesizing of novel biocomposite materials. Highlights: ► Biomineralization of KCl crystal has been studied in Hemoglobin LB film. ► KCl crystal growth is time and concentration of KCl dependent. ► The alignment of KCl crystal growth is fractal nature with time. ► The unfolding of Hb and evaporation factor has some role in crystallization and fractal growth.

  7. 'Sapphire' project. Objectives and outcomes

    International Nuclear Information System (INIS)

    Shkolnik, V.S.

    1997-01-01

    'Sapphire' Project contains the US assistance in purchasing/exporting 600 kg of highly enriched uranium from the State Holding Association 'Ulba' Uranium Plant, and compensatory equipment and service deliveries under the mutually concerted list. The compensatory payments were as separate projects in conformity with Kazakhstan enterprises needs, participation quota of which was determined by the Kazakhstan Government. Realization Milestones. Activity on Separate Projects: - basic 'Sapphire' part includes medical projects; - Kazakhstan Services were equipped with computers by the American International Development Agency for Taxation Services of Kazakhstan and by US Department of Energy for Monitoring preparation of Kazakhstan Atomic energy Agency. - 7 Research projects are being realized via the International Science and Technological Center; - export control. It has been realized as the equipment delivery under the concerted list; - equipping of nuclear materials accounting and control system at 'Ulba' Association enterprises

  8. Frequency-doubled diode laser for direct pumping of Ti:sapphire lasers

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2012-01-01

    . However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20...... fs are measured. These results open the opportunity of establishing diode laser pumped Ti:sapphire lasers for e.g. biophotonic applications like retinal optical coherence tomography or pumping of photonic crystal fibers for CARS microscopy.......A single-pass frequency doubled high-power tapered diode laser emitting nearly 1.3 W of green light suitable for direct pumping of Ti:sapphire lasers generating ultrashort pulses is demonstrated. The pump efficiencies reached 75 % of the values achieved with a commercial solid-state pump laser...

  9. Crystallization Kinetics of Organic–Inorganic Trihalide Perovskites and the Role of the Lead Anion in Crystal Growth

    KAUST Repository

    Moore, David T.

    2015-02-18

    © 2015 American Chemical Society. Methylammonium lead halide perovskite solar cells continue to excite the research community due to their rapidly increasing performance which, in large part, is due to improvements in film morphology. The next step in this progression is control of the crystal morphology which requires a better fundamental understanding of the crystal growth. In this study we use in situ X-ray scattering data to study isothermal transformations of perovskite films derived from chloride, iodide, nitrate, and acetate lead salts. Using established models we determine the activation energy for crystallization and find that it changes as a function of the lead salt. Further analysis enabled determination of the precursor composition and showed that the primary step in perovskite formation is removal of excess organic salt from the precursor. This understanding suggests that careful choice of the lead salt will aid in controlling crystal growth, leading to superior films and better performing solar cells.

  10. The inhibition of crystal growth of mirabilite in aqueous solutions in the presence of phosphonates

    Science.gov (United States)

    Vavouraki, A. I.; Koutsoukos, P. G.

    2016-02-01

    The formation of sodium sulfate decahydrate (Mirabilite) has been known to cause serious damages to structural materials both of modern and of historical buildings. Methods which can retard or completely suppress the development of mirabilte crystals are urgently needed especially as remedies or preventive measures for the preservation of the built cultural heritage. In the present work we present results on the effect of the presence of phosphonate compounds on the kinetics of crystal growth from aqueous supersaturated solutions at 18 °C using the seeded growth technique. The phosphonate compounds tested differed with respect to the number of ionizable phosphonate groups and with respect to the number of amino groups in the respective molecules. The crystal growth process was monitored by the temperature changes during the exothermic crystallization of mirabilite in the stirred supersaturated solutions. The crystal growth of mirabilite in the presence of: (1-hydroxyethylidene)-1, 1-diphosphonic acid (HEDP), amino tri (methylene phosphonic acid) (ATMP), hexamethylenediaminetetra (methylene)phosphonic acid (HTDMP), and diethylene triamine penta(methylene phosphonic acid)(DETPMP) over a range of concentrations between 0.1-5% w/w resulted in significant decrease of the rates of mirabilite crystal growth. All phosphonic compounds tested reduced the crystallization rates up to 60% in comparison with additive-free solutions. The presence of the test compounds did not cause changes of the mechanism of crystal growth which was surface diffusion controlled, as shown by the second order dependence of the rates of mirabilite crystal growth on the relative supersaturation. The excellent fit of the measured rates to a kinetic Langmuir-type model suggested that the activity of the tested inhibitors could be attributed to the adsorption and subsequent reduction of the active crystal growth sites of the seed crystals. In all cases, the inhibitory activity was reduced with

  11. Synthesis, growth, crystal structure, optical and third order nonlinear optical properties of quinolinium derivative single crystal: PNQI

    Science.gov (United States)

    Karthigha, S.; Krishnamoorthi, C.

    2018-03-01

    An organic quinolinium derivative nonlinear optical (NLO) crystal, 1-ethyl-2-[2-(4-nitro-phenyl)-vinyl]-quinolinium iodide (PNQI) was synthesized and successfully grown by slow evaporation solution growth technique. Formation of a crystalline compound was confirmed by single crystal X-ray diffraction. The quinolinium compound PNQI crystallizes in the triclinic crystal system with a centrosymmetric space group of P-1 symmetry. The molecular structure of PNQI was confirmed by 1H NMR and 13C NMR spectral studies. The thermal properties of the crystal have been investigated by thermogravimetric (TG) and differential scanning calorimetry (DSC) studies. The optical characteristics obtained from UV-Vis-NIR spectral data were described and the cut-off wavelength observed at 506 nm. The etching study was performed to analyse the growth features of PNQI single crystal. The third order NLO properties such as nonlinear refractive index (n2), nonlinear absorption coefficient (β) and nonlinear susceptibility (χ (3)) of the crystal were investigated using Z-scan technique at 632.8 nm of Hesbnd Ne laser.

  12. Protein crystal growth on board Shenzhou 3: a concerted effort improves crystal diffraction quality and facilitates structure determination

    International Nuclear Information System (INIS)

    Han, Y.; Cang, H.-X.; Zhou, J.-X.; Wang, Y.-P.; Bi, R.-C.; Colelesage, J.; Delbaere, L.T.J.; Nahoum, V.; Shi, R.; Zhou, M.; Zhu, D.-W.; Lin, S.-X.

    2004-01-01

    The crystallization of 16 proteins was carried out using 60 wells on board Shenzhou 3 in 2002. Although the mission was only 7 days, careful and concerted planning at all stages made it possible to obtain crystals of improved quality compared to their ground controls for some of the proteins. Significantly improved resolutions were obtained from diffracted crystals of 4 proteins. A complete data set from a space crystal of the PEP carboxykinase yielded significantly higher resolution (1.46 A vs. 1.87 A), I/sigma (22.4 vs. 15.5), and a lower average temperature factor (29.2 A 2 vs. 42.9 A 2 ) than the best ground-based control crystal. The 3-D structure of the enzyme is well improved with significant ligand density. It has been postulated that the reduced convection and absence of macromolecule sedimentation under microgravity have advantages/benefits for protein crystal growth. Improvements in experimental design for protein crystal growth in microgravity are ongoing

  13. Growth and characterization of high-purity SiC single crystals

    Science.gov (United States)

    Augustine, G.; Balakrishna, V.; Brandt, C. D.

    2000-04-01

    High-purity SiC single crystals with diameter up to 50 mm have been grown by the physical vapor transport method. Finite element analysis was used for thermal modeling of the crystal growth cavity in order to reduce stress in the grown crystal. Crystals are grown in high-purity growth ambient using purified graphite furniture and high-purity SiC sublimation sources. Undoped crystals up to 50 mm in diameter with micropipe density less than 100 cm -2 have been grown using this method. These undoped crystals exhibit resistivities in the 10 3 Ω cm range and are p-type due to the presence of residual acceptor impurities, mainly boron. Semi-insulating SiC material is obtained by doping the crystal with vanadium. Vanadium has a deep donor level located near the middle of the band gap, which compensates the residual acceptor resulting in semi-insulating behavior.

  14. Crystal growth and properties of novel organic nonlinear optical crystals of 4-Nitrophenol urea

    Energy Technology Data Exchange (ETDEWEB)

    Mohan, M. Krishna, E-mail: krishnamohan.m@ktr.srmuniv.ac.in; Ponnusamy, S.; Muthamizhchelvan, C.

    2017-07-01

    Single crystals of 4-Nitrophenol urea have been grown from water using slow evaporation technique at constant temperature, with the vision to improve the properties of the crystals. The unit cell parameters of the grown crystals were determined by single crystal and powder X-Ray diffraction. FTIR studies reveals the presence of different vibrational bands. The Optical studies confirmed that the crystal is transparent up to 360 nm .TGA and DSC studies were carried out to understand the thermal behavior of crystals. The SHG studies show the suitability of the crystals for NLO applications. The etching studies were carried out to study the behavior of the crystals under different conditions.These studies reveal that the crystals of 4-Nitrophenol urea are suitable for device applications. - Highlights: • 4-Nitrophenol urea crystals of dimensions 14 mm × 1 mm were grown. • UV–Visible studies indicate the crystal is transparent in the region of 370–800 nm. • Thermal studies show the crystal starts decomposing at 170 °C. • SHG studies indicate that the crystals have NLO efficiency 3.5 times that of KDP.

  15. Fatigue effect in ferroelectric crystals: Growth of the frozen domains

    Science.gov (United States)

    Shur, V. Ya.; Akhmatkhanov, A. R.; Baturin, I. S.

    2012-06-01

    The model of the fatigue effect during cyclic switching caused by growth of the frozen domain area with charged domain walls has been proposed. It was claimed on the basis of the previous experimental results that for switching in increasing field the frozen domain area started to grow at the given sub-threshold field value and stopped at the threshold field. The influence of the shape and frequency of the field pulses used for cyclic switching has been considered. The uniaxial ferroelectric stoichiometric lithium tantalate single crystals produced by vapor transport equilibration with record low value of coercive field have been chosen as a model material for experimental verification of the model. The formation of the charged domain walls as a result of cyclic switching has been revealed by analysis of the domain images obtained by optical and Raman confocal microscopy. It has been shown that the fatigue degree is equal to the fraction of the frozen domain area. The experimental dependence of the switched charge on the cycle number has been successfully fitted by modified Kolmogorov-Avrami formula. The experimentally observed frequency independence of fatigue profile for rectangular pulses and frequency dependence for triangular pulses has been explained by proposed model.

  16. Crystal growth and magnetic property of YFeO3 crystal

    Indian Academy of Sciences (India)

    2Department of Physics, Shanghai University, Shanghai 200444, China. 3School ... YFeO3 and other rare earth substituted crystals with distorted orthorhombic pervoskite-like struc- .... gen, with rotation rates of 30 rpm for the growing crystal or.

  17. Stacking fault growth of FCC crystal: The Monte-Carlo simulation approach

    International Nuclear Information System (INIS)

    Jian Jianmin; Ming Naiben

    1988-03-01

    The Monte-Carlo method has been used to simulate the growth of the FCC (111) crystal surface, on which is presented the outcrop of a stacking fault. The comparison of the growth rates has been made between the stacking fault containing surface and the perfect surface. The successive growth stages have been simulated. It is concluded that the outcrop of stacking fault on the crystal surface can act as a self-perpetuating step generating source. (author). 7 refs, 3 figs

  18. Single-crystal growth of ceria-based materials

    International Nuclear Information System (INIS)

    Ulbrich, Gregor

    2015-01-01

    In this work it could be shown that Skull-Melting is a suitable method for growing ceria single crystals. Twenty different ceria-based single crystals could be manufactured. It was possible to dope ceria single crystals with Gd, Sm, Y, Zr, Ti, Ta, and Pr in different concentrations. Also co-doping with the named metals was realized. However, there remain some problems for growing ceria-based single crystals by Skull-Melting. As ignition metal zirconium was used because no ceria-based material works well. For that reason all single crystals show small zirconium contamination. Another problem is the formation of oxygen by the heat-induced reduction of ceria during the melting process. Because of that the skull of sintered material is often destroyed by gas pressure. This problem had to be solved individually for every single crystal. The obtained single crystals were characterized using different methods. To ensure the single crystal character the y were examined by Laue diffraction. All manufactured crystals are single crystals. Also powder diffraction patterns of the milled and oxidized samples were measured. For the determination of symmetry and metric the structural parameters were analyzed by the Rietveld method. All synthesized materials crystallize in space group Fm-3m known from calcium fluoride. The cubic lattice parameter a was determined for all crystals. In the case of series with different cerium and zirconium concentrations a linear correlation between cerium content and cubic lattice parameter was detected. The elemental composition was determined by WDX. All crystals show a homogeneous elemental distribution. The oxygen content was calculated because the WDX method isn't useful for determination.

  19. A Study of Biomolecules as Growth Modifiers of Calcium Oxalate Crystals

    Science.gov (United States)

    Kwak, Junha John

    Crystallization processes are ubiquitous in nature, science, and technology. Controlling crystal growth is pivotal in many industries as material properties and functions can be tailored by tuning crystal habits (e.g. size, shape, phase). In biomineralization, organisms exert excellent control over bottom-up synthesis and assembly of inorganic-organic structures (e.g. bones, teeth, exoskeletons). This is made possible by growth modifiers that range from small molecules to macromolecules, such as proteins. Molecular recognition of the mineral phase allows proteins to function as nucleation templates, matrices, and growth inhibitors or promoters. We are interested in taking a biomimetic approach to control crystallization via biomolecular growth modifiers. We investigated calcium oxalate monohydrate (COM), found in plants and kidney stones, as a model system of crystallization. We studied the effects of four common proteins on COM crystallization: bovine serum albumin (BSA), transferrin, lactoferrin, and lysozyme. Through kinetic studies of COM crystallization, we classified BSA and lysozyme as COM growth inhibitor and promoter respectively. Their inhibition and promotion effects were also evident in the macroscopic crystal habit. Through adsorption and microscopy experiments, we showed that BSA exhibits binding specificity for the apical surfaces of macroscopic COM crystals. Lysozyme, on the other, functions via a non-binding mechanism at the surface to accelerate the growth of the apical surfaces. We also synthesized and studied peptides derived from the protein primary sequences to identify putative domains responsible for these inhibition and promotion effects. Collectively, our study of physiologically relevant biomolecules suggests potential roles of COM modifiers in pathological crystallization and helps to develop guidelines for rational design of biomolecular growth modifiers for applications in crystal engineering.

  20. Crystallization in metglass: growth mechanism of crystals and radiation effects in Fe Ni P B

    International Nuclear Information System (INIS)

    Limoge, Y.; Barbu, A.

    1981-08-01

    Studying crystallization mechanisms and transport properties in amorphous metallic alloys we propose a model for systems wich are displaying eutectoid decomposition. Bringing together self diffusion, electron microscopy and electron irradiation experiments on a Fe Ni P B alloys we have shown that crystallization controlled by interfacial diffusion at the crystal surface can explain all the observed features of the experimental behaviour

  1. Surface growth mechanisms and structural faulting in the growth of large single and spherulitic titanosilicate ETS-4 crystals

    Science.gov (United States)

    Miraglia, Peter Q.; Yilmaz, Bilge; Warzywoda, Juliusz; Sacco, Albert

    2004-10-01

    Morphological, surface and crystallographic analyses of titanosilicate ETS-4 products, with diverse habits ranging from spherulitic particles composed of submicron crystallites to large single crystals, are presented. Pole figures revealed that crystal surfaces with a-, b- and c- axes corresponded to , and directions, respectively. Thus, technologically important 8-membered ring pores and titania chains in ETS-4 run along the b-axis of single crystals and terminate at the smallest crystal face. Height of the spiral growth steps observed on {1 0 0} and {0 0 1} surfaces corresponded to the interplanar spacings associated with their crystallographic orientation, and is equivalent to the thickness of building units that form the ETS-4 framework. Data suggest that the more viscous synthesis mixtures, with a large driving force for growth, increased the two- and three-dimensional nucleation, while limiting the transport of nutrients to the growth surface. These conditions increase the tendency for stacking fault formation on {1 0 0} surfaces and small angle branching, which eventually results in spherulitic growth. The growth of high quality ETS-4 single crystals (from less viscous synthesis mixtures) occurred at lower surface nucleation rates. Data suggest that these high quality, large crystals grew due to one-dimensional nucleation at spiral hillocks, and indicate that under these conditions un-faulted growth is preferred.

  2. Insights into crystal growth rates from a study of orbicular granitoids from western Australia

    Science.gov (United States)

    Zhang, J.; Lee, C. T.

    2017-12-01

    The purpose of this study is to develop new tools for constraining crystal growth rate in geologic systems. Of interest is the growth of crystals in magmatic systems because crystallization changes the rheology of a magma as well as provides surfaces on which bubbles can nucleate. To explore crystal growth in more detail, we conducted a case study of orbicular granitoids from western Australia. The orbicules occur as spheroids dispersed in a granitic matrix. Most orbicules have at least two to three concentric bands, composed of elongate and radially oriented hornblende surrounded by interstitial plagioclase. We show that mineral modes and hence bulk composition at the scale of the band is homogeneous from rim to core. Crystal number density decreases and crystal size increases from rim to core. These observations suggest that the orbicules crystallized rapidly from rim to core. We hypothesize that the orbicules are blobs of hot dioritic liquid injected into a cold granitic magma and subsequently cooled and solidified. Crystals stop growing when the mass transport rate tends to zero due to the low temperature. We estimated cooling timescales based on conductive cooling models, constraining crystal growth rates to be 10-6 to 10-5 m/s. We also show that the oscillatory banding is controlled by disequilibrium crystallization, wherein hornblende preferentially crystallizes, resulting in the diffusive growth of a chemical boundary layer enriched in plagioclase component, which in turns results in crystallization of plagioclase. We show that the correlation between the width of each crystallization couplet (band) with distance from orbicule rim is linear, with the slope corresponding to the square root of the ratio between chemical diffusivity in the growth medium and thermal diffusivity. We estimate chemical diffusivity of 2*10-7 m2/s, which is remarkably fast for silicate liquids but reasonable for diffusion in hot aqueous fluids, suggesting that crystallization

  3. Growth and characterization of magnesium chloride and lanthanum chloride doped strontium tartrate crystals - gel method

    International Nuclear Information System (INIS)

    Kalaiarasi, S.; Jaikumar, D.

    2014-01-01

    Growth of single crystals of doped strontium tartrate by controlled diffusion of strontium chloride into the silica gel charged with tartaric acid at room temperature is narrated. In this study, we synthesized magnesium chloride (5% and 10%) doped strontium tartrate crystals and Lanthanum chloride (5%, 10% and 15%) doped strontium tartrate crystals are grown. The crystal structure of the compound crystals was confirmed by single crystal X-ray diffraction. The Fourier transform infrared spectrum of pure and doped crystals are recorded and analyzed. The UV-Vis-NIR spectrum analysis reveals that the optical study of the grown crystals. The second harmonic generation efficiency was measured by using Kurtz powder technique with Nd:YAG laser of wavelength 1064 nm. (author)

  4. Growth and microtopographic study of CuInSe{sub 2} single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Chauhan, Sanjaysinh M.; Chaki, Sunil, E-mail: sunilchaki@yahoo.co.in; Deshpande, M. P. [Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Gujarat - 388120 (India); Tailor, J. P. [Applied Physics Department, S.V.N.I.T., Surat, Gujarat - 395007 (India)

    2016-05-23

    The CuInSe{sub 2} single crystals were grown by chemical vapour transport (CVT) technique using iodine as transporting agent. The elemental composition of the as-grown CuInSe{sub 2} single crystals was determined by energy dispersive analysis of X-ray (EDAX). The unit cell crystal structure and lattice parameters were determined by X-ray diffraction (XRD) technique. The surface microtopographic study of the as-grown CuInSe{sub 2} single crystals surfaces were done to study the defects, growth mechanism, etc. of the CVT grown crystals.

  5. Inhibition of ice crystal growth in ice cream mix by gelatin hydrolysate.

    Science.gov (United States)

    Damodaran, Srinivasan

    2007-12-26

    The inhibition of ice crystal growth in ice cream mix by gelatin hydrolysate produced by papain action was studied. The ice crystal growth was monitored by thermal cycling between -14 and -12 degrees C at a rate of one cycle per 3 min. It is shown that the hydrolysate fraction containing peptides in the molecular weight range of about 2000-5000 Da exhibited the highest inhibitory activity on ice crystal growth in ice cream mix, whereas fractions containing peptides greater than 7000 Da did not inhibit ice crystal growth. The size distribution of gelatin peptides formed in the hydrolysate was influenced by the pH of hydrolysis. The optimum hydrolysis conditions for producing peptides with maximum ice crystal growth inhibitory activity was pH 7 at 37 degrees C for 10 min at a papain to gelatin ratio of 1:100. However, this may depend on the type and source of gelatin. The possible mechanism of ice crystal growth inhibition by peptides from gelatin is discussed. Molecular modeling of model gelatin peptides revealed that they form an oxygen triad plane at the C-terminus with oxygen-oxygen distances similar to those found in ice nuclei. Binding of this oxygen triad plane to the prism face of ice nuclei via hydrogen bonding appears to be the mechanism by which gelatin hydrolysate might be inhibiting ice crystal growth in ice cream mix.

  6. Sapphire scintillation tests for cryogenic detectors in the Edelweiss dark matter search

    Energy Technology Data Exchange (ETDEWEB)

    Luca, M

    2007-07-15

    Identifying the matter in the universe is one of the main challenges of modern cosmology and astrophysics. An important part of this matter seems to be made of non-baryonic particles. Edelweiss is a direct dark matter search using cryogenic germanium bolometers in order to look for particles that interact very weakly with the ordinary matter, generically known as WIMPs (weakly interacting massive particles). An important challenge for Edelweiss is the radioactive background and one of the ways to identify it is to use a larger variety of target crystals. Sapphire is a light target which can be complementary to the germanium crystals already in use. Spectroscopic characterization studies have been performed using different sapphire samples in order to find the optimum doping concentration for good low temperature scintillation. Ti doped crystals with weak Ti concentrations have been used for systematic X ray excitation tests both at room temperature and down to 30 K. The tests have shown that the best Ti concentration for optimum room temperature scintillation is 100 ppm and 50 ppm at T = 45 K. All concentrations have been checked by optical absorption and fluorescence. After having shown that sapphire had interesting characteristics for building heat-scintillation detectors, we have tested if using a sapphire detector was feasible within a dark matter search. During the first commissioning tests of Edelweiss-II, we have proved the compatibility between a sapphire heat scintillation detector and the experimental setup. (author)

  7. Impact of Heterogeneity and Lattice Bond Strength on DNA Triangle Crystal Growth.

    Science.gov (United States)

    Stahl, Evi; Praetorius, Florian; de Oliveira Mann, Carina C; Hopfner, Karl-Peter; Dietz, Hendrik

    2016-09-07

    One key goal of DNA nanotechnology is the bottom-up construction of macroscopic crystalline materials. Beyond applications in fields such as photonics or plasmonics, DNA-based crystal matrices could possibly facilitate the diffraction-based structural analysis of guest molecules. Seeman and co-workers reported in 2009 the first designed crystal matrices based on a 38 kDa DNA triangle that was composed of seven chains. The crystal lattice was stabilized, unprecedentedly, by Watson-Crick base pairing. However, 3D crystallization of larger designed DNA objects that include more chains such as DNA origami remains an unsolved problem. Larger objects would offer more degrees of freedom and design options with respect to tailoring lattice geometry and for positioning other objects within a crystal lattice. The greater rigidity of multilayer DNA origami could also positively influence the diffractive properties of crystals composed of such particles. Here, we rationally explore the role of heterogeneity and Watson-Crick interaction strengths in crystal growth using 40 variants of the original DNA triangle as model multichain objects. Crystal growth of the triangle was remarkably robust despite massive chemical, geometrical, and thermodynamical sample heterogeneity that we introduced, but the crystal growth sensitively depended on the sequences of base pairs next to the Watson-Crick sticky ends of the triangle. Our results point to weak lattice interactions and high concentrations as decisive factors for achieving productive crystallization, while sample heterogeneity and impurities played a minor role.

  8. Precipitation of thin-film organic single crystals by a novel crystal growth method using electrospray and ionic liquid film

    Science.gov (United States)

    Ueda, Hiroyuki; Takeuchi, Keita; Kikuchi, Akihiko

    2018-04-01

    We report an organic single crystal growth technique, which uses a nonvolatile liquid thin film as a crystal growth field and supplies fine droplets containing solute from the surface of the liquid thin film uniformly and continuously by electrospray deposition. Here, we investigated the relationships between the solute concentration of the supplied solution and the morphology and size of precipitated crystals for four types of fluorescent organic low molecule material [tris(8-hydroxyquinoline)aluminum (Alq3), 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), N,N‧-bis(3-methylphenyl)-N,N‧-diphenylbenzidine (TPD), and N,N-bis(naphthalene-1-yl)-N,N-diphenyl-benzidine (NPB)] using an ionic liquid as the nonvolatile liquid. As the concentration of the supplied solution decreased, the morphology of precipitated crystals changed from dendritic or leaf shape to platelike one. At the solution concentration of 0.1 mg/ml, relatively large platelike single crystals with a diagonal length of over 100 µm were obtained for all types of material. In the experiment using ionic liquid and dioctyl sebacate as nonvolatile liquids, it was confirmed that there is a clear positive correlation between the maximum volume of the precipitated single crystal and the solubility of solute under the same solution supply conditions.

  9. Validation of mathematical model for CZ process using small-scale laboratory crystal growth furnace

    Science.gov (United States)

    Bergfelds, Kristaps; Sabanskis, Andrejs; Virbulis, Janis

    2018-05-01

    The present material is focused on the modelling of small-scale laboratory NaCl-RbCl crystal growth furnace. First steps towards fully transient simulations are taken in the form of stationary simulations that deal with the optimization of material properties to match the model to experimental conditions. For this purpose, simulation software primarily used for the modelling of industrial-scale silicon crystal growth process was successfully applied. Finally, transient simulations of the crystal growth are presented, giving a sufficient agreement to experimental results.

  10. Morphology of growth of Bi2Sr2CaCu2O8 single crystals

    Science.gov (United States)

    Indenbom, M. V.; van der Beek, C. J.; Berseth, V.; Wolf, Th.; Berger, H.; Benoit, W.

    1996-12-01

    A good correlation of twins on the basal surface of flux-grown Bi2Sr2CaCu2Ox (BSCCO) single crystals with surface. growth steps is observed, the b-axis being perpendicular to the steps and, thus, parallel to the growth direction. It is found that mono-twin BSCCO single crystals produced by the travelling solvent floating zone method also grow preferentially along b, i.e. nearly perpendicularly to the boule axis, contrary to the common belief. This new understanding of the morphology of growth explains the nature of major defects in these crystals, which considerably change their measured superconducting properties, in a different way.

  11. High-pressure growth of NaMn7O12 crystals

    International Nuclear Information System (INIS)

    Gilioli, Edi; Calestani, Gianluca; Licci, Francesca; Paorici, Carlo; Gauzzi, Andrea; Bolzoni, Fulvio; Prodi, Andrea

    2006-01-01

    With the aim of producing large crystals of metastable NaMn 7 O 12 manganite, suitable for physical measurements (i.e.: RXS, Raman, EPR, STS, single-crystal neutron diffraction), we carried out a systematic investigation of the parameters controlling the growth of crystals, including the thermodynamic variables (T, P, and reagent composition) and the kinetic factors, such as reaction time and heating/cooling rate. By varying each parameter while maintaining constant the other ones, we found the thermodynamic conditions under which an optimum equilibrium is reached between the competing nucleation and growth rates. They were found to range between 400 and 700 o C (T) and between 20 and 60 Kbars (P), respectively. Under these conditions, we further optimized the growth process, by establishing the most appropriate growth duration (several hours), reagent type (pre-reacted precursor) and composition (presence of 0.4 mole% water and of 5% Na excess with respect to the stoichiometric composition). Typical crystals having several hundreds μm in linear sizes were reproducibly obtained, while the largest sample was about 800 μm. A description of the crystal growth mechanism, based on the experimental results, is also presented and discussed. It assumes that two different mechanisms control the crystal growth, depending on whether the crystallization is taking place outside the stability field, i.e. in presence of native reagents, or inside it, i.e. in a polycrystalline NaMn 7 O 12 phase matrix. In the first case, large crystal growth occurs thanks to the low nucleation and high diffusion rates, while in the second one the crystallization is due to the solid-state mechanism based on the free energy reduction caused by grain boundary migration. - Graphical abstract: Optical (a) and SEM images (b) of NaMn 7 O 12 crystals. Note the markers: 300 μm, top-right corner (a) and 40 μm, bottom left (b)

  12. Supersaturation Control using Analytical Crystal Size Distribution Estimator for Temperature Dependent in Nucleation and Crystal Growth Phenomena

    Science.gov (United States)

    Zahari, Zakirah Mohd; Zubaidah Adnan, Siti; Kanthasamy, Ramesh; Saleh, Suriyati; Samad, Noor Asma Fazli Abdul

    2018-03-01

    The specification of the crystal product is usually given in terms of crystal size distribution (CSD). To this end, optimal cooling strategy is necessary to achieve the CSD. The direct design control involving analytical CSD estimator is one of the approaches that can be used to generate the set-point. However, the effects of temperature on the crystal growth rate are neglected in the estimator. Thus, the temperature dependence on the crystal growth rate needs to be considered in order to provide an accurate set-point. The objective of this work is to extend the analytical CSD estimator where Arrhenius expression is employed to cover the effects of temperature on the growth rate. The application of this work is demonstrated through a potassium sulphate crystallisation process. Based on specified target CSD, the extended estimator is capable of generating the required set-point where a proposed controller successfully maintained the operation at the set-point to achieve the target CSD. Comparison with other cooling strategies shows a reduction up to 18.2% of the total number of undesirable crystals generated from secondary nucleation using linear cooling strategy is achieved.

  13. Introducing uncertainty analysis of nucleation and crystal growth models in Process Analytical Technology (PAT) system design of crystallization processes.

    Science.gov (United States)

    Samad, Noor Asma Fazli Abdul; Sin, Gürkan; Gernaey, Krist V; Gani, Rafiqul

    2013-11-01

    This paper presents the application of uncertainty and sensitivity analysis as part of a systematic model-based process monitoring and control (PAT) system design framework for crystallization processes. For the uncertainty analysis, the Monte Carlo procedure is used to propagate input uncertainty, while for sensitivity analysis, global methods including the standardized regression coefficients (SRC) and Morris screening are used to identify the most significant parameters. The potassium dihydrogen phosphate (KDP) crystallization process is used as a case study, both in open-loop and closed-loop operation. In the uncertainty analysis, the impact on the predicted output of uncertain parameters related to the nucleation and the crystal growth model has been investigated for both a one- and two-dimensional crystal size distribution (CSD). The open-loop results show that the input uncertainties lead to significant uncertainties on the CSD, with appearance of a secondary peak due to secondary nucleation for both cases. The sensitivity analysis indicated that the most important parameters affecting the CSDs are nucleation order and growth order constants. In the proposed PAT system design (closed-loop), the target CSD variability was successfully reduced compared to the open-loop case, also when considering uncertainty in nucleation and crystal growth model parameters. The latter forms a strong indication of the robustness of the proposed PAT system design in achieving the target CSD and encourages its transfer to full-scale implementation. Copyright © 2013 Elsevier B.V. All rights reserved.

  14. GROWTH RATE DISTRIBUTION OF BORAX SINGLE CRYSTALS ON THE (001 FACE UNDER VARIOUS FLOW RATES

    Directory of Open Access Journals (Sweden)

    Suharso Suharso

    2010-06-01

    Full Text Available The growth rates of borax single crystals from aqueous solutions at various flow rates in the (001 direction were measured using in situ cell method. From the growth rate data obtained, the growth rate distribution of borax crystals was investigated using Minitab Software and SPSS Software at relative supersaturation of 0807 and temperature of 25 °C. The result shows that normal, gamma, and log-normal distribution give a reasonably good fit to GRD. However, there is no correlation between growth rate distribution and flow rate of solution.   Keywords: growth rate dispersion (GRD, borax, flow rate

  15. Crystal growth and optical properties of 4-aminobenzophenone (ABP)

    Science.gov (United States)

    Li, Zhengdong; Wu, Baichang; Su, Genbo; Huang, Gongfan

    1997-02-01

    Bulk crystals of 4-aminobenzophenone (ABP) were grown from organic solution. The crystal structure was determined by X-ray analysis. The refractive indices were determined by the method of prism minimum deviation. Some effective nonlinear-optical coefficients deff were measured. A blue second-harmonic emission with wavelengths of 433 and 460 nm were observed during laser diode pumping.

  16. Phosphorus zoning as a recorder of crystal growth kinetics

    DEFF Research Database (Denmark)

    Baziotis, I.; Asimow, P.D.; Ntaflos, T.

    2017-01-01

    spectrometry. The petrogenetic history of each vein involves melt intrusion, cooling accompanied by both wall-rock reaction and crystallization, quench of melt to a glass, and possibly later modifications. Exotic secondary olivine crystals in the veins display concentric phosphorus (P)-rich zoning, P...

  17. Crystal growth and comparison of vibrational and thermal properties ...

    Indian Academy of Sciences (India)

    The TGA–DTA studies showed the thermal properties of the crystals. ... impact on laser technology, optical communication and optical storage technology. [1,2]. .... UTHC and UTHS crystals in the temperature range of 25–1100◦C with a heat-.

  18. Crystal growth and characterization of new semiorganic nonlinear optical single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kulshrestha, Shobha, E-mail: shobha011986@gmail.com; Shrivastava, A. K., E-mail: ashwaniaks@rediffmail.com [School of Studies in Physics, Jiwaji University Gwalior (M.P.) – 474 011 (India)

    2016-05-06

    An organic material of a L-histidine monohydrochloride single crystal was grown in a distilled water solution using the slow evaporation method at 40–45°C. The grown crystal was transparent and colourless, with a size of about 20 × 9 × 5 mm{sup 3}, obtained within a period of 21 days. The solubility of grown crystals have found out at various temperatures. The UV-visible transmittance studies show that the grown crystals have wide optical transparency in the entire visible region It is observed that the crystal has transparency window from 255nm to 700nm and its energy gap (Eg) found to be is 3.1eV. The grown crystal was subjected to powder X-ray diffraction analysis, confirming that the orthorhombic crystalline nature of the crystal. To identify the surface morphology, the as grown crystal was subjected to FE-SEM technique. The chemical composition of the grown crystal was estimated by Energy dispersive X-ray analysis. The optical behaviour of the grown crystal was analyzed by PL study.

  19. Growth of sodium chlorate crystals in the presence of potassium sulphate

    Science.gov (United States)

    Kim, E. L.; Tsyganova, A. A.; Vorontsov, D. A.; Ovsetsina, T. I.; Katkova, M. R.; Lykov, V. A.; Portnov, V. N.

    2015-09-01

    In this work, we investigated the morphology and growth rates of NaClO3 crystals in solutions with K2SO4 additives. NaClO3 crystals were grown using the temperature gradient technique under concentration convection. We found that the crystal habitus changed from cubic to tetrahedral, and the growth of the cubic {100}, tetrahedral {111} and rhomb-dodecahedral {110} faces decelerated with an increase in the concentration of SO42- ions. The {110} face was the most and the {100} face was the least inhibited by sulphate ions. The mechanism of SO42- ions action is their adsorption on the crystal surface, which impedes attachment of the crystal's building units. We conclude that different atomic structure and charge state of various crystal faces determine their sensitivity to the action of the SO42- ions.

  20. Control of nucleation and crystal growth of a silicate apatitic phase in a glassy matrix

    International Nuclear Information System (INIS)

    Ligny, D.; Caurant, D.; Bardez, I.; Dussossoy, J.L.; Loiseau, P.; Neuville, D.R.

    2004-01-01

    Nucleation and growth of crystal in an oxide glass was studied in a Si B Al Zr Nd Ca Na O system. The nucleation and growth process were monitored by thermal analysis and isothermal experiments. The effect of the network modifier was studied. Therefore for a Ca rich sample the crystallization is homogeneous in the bulk showing a slow increase of crystallinity as temperature increases. On the other hand, a Na rich sample undergoes several crystallization processes in the bulk or from the surface, leading to bigger crystals. The activation energy of the viscous flow and the glass transition are of same magnitude when that of crystallization is a lot smaller. Early diffusion of element is done with a mechanism different than the configurational rearrangements of the liquid sate. The global density and small size of the crystals within the Ca rich matrix confirmed that it would be a profitable waste form for minor actinides. (authors)

  1. Growth of large aluminum nitride single crystals with thermal-gradient control

    Science.gov (United States)

    Bondokov, Robert T; Rao, Shailaja P; Gibb, Shawn Robert; Schowalter, Leo J

    2015-05-12

    In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.

  2. Crystal growth, optical properties, and laser operation of Yb3+-doped NYW single crystal

    Science.gov (United States)

    Cheng, Y.; Xu, X. D.; Yang, X. B.; Xin, Z.; Cao, D. H.; Xu, J.

    2009-11-01

    Laser crystal Yb3+-doped NaY(WO4)2 (Yb:NYW) with excellent quality has been grown by Czochralski technique. The rocking curves from (400) plane of as-grown Yb:NYW crystal was measured and the full-width value at half-maximum was 19.92″. The effective segregation coefficients were measured by the X-ray fluorescence method. The polarized absorption spectra and the fluorescence spectra of Yb:NYW crystal were measured at room temperature. The fluorescence decay lifetime of Yb3+ ion in NYW crystal has been investigated. The spectroscopic parameters of Yb:NYW crystal are calculated and compared with those of Yb:YAG crystal. A continuous wave output power of 3.06 W at 1031 nm was obtained with a slope efficiency of 42% by use of diode pumping.

  3. Growth, structural, optical and surface analysis of piperazinium tartrate: A NLO single crystal

    Science.gov (United States)

    Gupta, Apurva; Raseel Rahman M., K.; Nair, Lekha

    2018-05-01

    Single crystal of piperazinium tartrate (PPZT) was grown by the slow evaporation solution growth technique at room temperature. Crystallinity of grown crystal was examined by powder X-ray diffraction. High transparency and wide band gap were observed in the UV-Visible spectroscopic studies. Intense and broad emissions were observed in the blue region, as that is indicated by photoluminescence spectroscopy. The quality of the grown PPZT single crystals were analyzed by the etching studies using the water as the etchant.

  4. Controlling single and few-layer graphene crystals growth in a solid carbon source based chemical vapor deposition

    International Nuclear Information System (INIS)

    Papon, Remi; Sharma, Subash; Shinde, Sachin M.; Vishwakarma, Riteshkumar; Tanemura, Masaki; Kalita, Golap

    2014-01-01

    Here, we reveal the growth process of single and few-layer graphene crystals in the solid carbon source based chemical vapor deposition (CVD) technique. Nucleation and growth of graphene crystals on a polycrystalline Cu foil are significantly affected by the injection of carbon atoms with pyrolysis rate of the carbon source. We observe micron length ribbons like growth front as well as saturated growth edges of graphene crystals depending on growth conditions. Controlling the pyrolysis rate of carbon source, monolayer and few-layer crystals and corresponding continuous films are obtained. In a controlled process, we observed growth of large monolayer graphene crystals, which interconnect and merge together to form a continuous film. On the other hand, adlayer growth is observed with an increased pyrolysis rate, resulting few-layer graphene crystal structure and merged continuous film. The understanding of monolayer and few-layer crystals growth in the developed CVD process can be significant to grow graphene with controlled layer numbers.

  5. Studies on growth, crystal structure and characterization of novel organic nicotinium trifluoroacetate single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Dhanaraj, P.V. [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam 603 110 (India); Rajesh, N.P., E-mail: rajeshnp@hotmail.com [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam 603 110 (India); Sundar, J. Kalyana; Natarajan, S. [Department of Physics, Madurai Kamaraj University, Madurai 625 021 (India); Vinitha, G. [Department of Physics, Crescent Engineering College, Chennai 600 048 (India)

    2011-09-15

    Highlights: {yields} Good quality crystals of nicotinium trifluoroacetate in monoclinic system were grown for first time. {yields} Nicotinium trifluoroacetate crystal exhibits third order nonlinear optical properties. {yields} The optical spectrum of nicotinium trifluoroacetate crystal reveals the wide transmission in the entire range with cutoff wavelength at 286 nm. {yields} Nicotinium trifluoroacetate is a low dielectric constant material. - Abstract: An organic material, nicotinium trifluoroacetate (NTF) was synthesized and single crystals in monoclinic system were grown from aqueous solution for the first time. Its solubility and metastable zone width were estimated. The crystal structure of NTF was analyzed to reveal the molecular arrangements and the formation of hydrogen bonds in the crystal. High-resolution X-ray diffraction rocking curve measurements were performed to analyze the structural perfection of the grown crystals. Functional groups in NTF were identified by Fourier transform infrared spectral analysis. Thermal behaviour and stability of NTF were studied by thermogravimetric and differential thermal analysis and differential scanning calorimetry. Mechanical and dielectric properties of NTF crystals were analyzed. Optical studies reveal that NTF crystals are transparent in the wavelength range 286-1100 nm. The third order nonlinear optical parameters of NTF were derived by the Z-scan technique.

  6. Crystal growth, characterization and theoretical studies of 4-aminopyridinium picrate

    Science.gov (United States)

    Aditya Prasad, A.; Muthu, K.; Rajasekar, M.; Meenatchi, V.; Meenakshisundaram, S. P.

    2015-01-01

    Single crystals of 4-aminopyridinium picrate (APP) were grown by slow evaporation of a mixed solvent system methanol-acetone (1:1, v/v) containing equimolar quantities of 4-aminopyridine and picric acid. Structure is elucidated by single crystal XRD analysis and the crystal belongs to monoclinic system with four molecules in the unit cell (space group P21/c) and the cell parameter values are, a = 8.513 Å (±0.015), b = 11.33 Å (±0.02), c = 14.33 Å (±0.03) and β = 104.15° (±0.019), V = 1340 A3 (±6) with refined R factors R1 = 0.0053 and wR2 = 0.0126. The electron density mapping is interpreted to find coordinates for each atom in the crystallized molecules. The various functional groups present in the molecule are confirmed by FT-IR analysis. UV-visible spectral analysis was used to determine the band gap energy of 4-aminopyridinium picrate. Powder X-ray diffraction pattern reveals the crystallinity of the as-grown crystal and it closely resembles the simulated XRD from the single crystal XRD analysis. Scanning electron microscopy reveals the surface morphology of the grown crystal. Optimized geometry is derived by Hartree-Fock theory calculations and the first-order molecular hyperpolarizability (β), theoretically calculated bond length, bond angles and excited state energy from theoretical UV-vis spectrum were estimated.

  7. A Low-Cost System Based on Image Analysis for Monitoring the Crystal Growth Process.

    Science.gov (United States)

    Venâncio, Fabrício; Rosário, Francisca F do; Cajaiba, João

    2017-05-31

    Many techniques are used to monitor one or more of the phenomena involved in the crystallization process. One of the challenges in crystal growth monitoring is finding techniques that allow direct interpretation of the data. The present study used a low-cost system, composed of a commercial webcam and a simple white LED (Light Emitting Diode) illuminator, to follow the calcium carbonate crystal growth process. The experiments were followed with focused beam reflectance measurement (FBRM), a common technique for obtaining information about the formation and growth of crystals. The images obtained in real time were treated with the red, blue, and green (RGB) system. The results showed a qualitative response of the system to crystal formation and growth processes, as there was an observed decrease in the signal as the growth process occurred. Control of the crystal growth was managed by increasing the viscosity of the test solution with the addition of monoethylene glycol (MEG) at 30% and 70% in a mass to mass relationship, providing different profiles of the RGB average curves. The decrease in the average RGB value became slower as the concentration of MEG was increased; this reflected a lag in the growth process that was proven by the FBRM.

  8. Growth and characterization of La2CoMnO6 crystals doped with Pb

    International Nuclear Information System (INIS)

    Milenov, T.I.; Rafailov, P.M.; Abrashev, M.V.; Nikolova, R.P.; Nakatsuka, A.; Avdeev, G.V.; Veleva, M.N.; Dobreva, S.; Yankova, L.; Gospodinov, M.M.

    2010-01-01

    Crystals of La 2 CoMnO 6 doped with Pb were grown by the high temperature solution growth method. Several crystals were examined by scanning electron microscopy (SEM), energy-dispersive X-ray analysis (EDAX), X-ray single-crystal diffractometry and polarized Raman spectroscopy. Some variations in the composition of different crystals are observed, however, within the volume of each distinct crystal the composition is found to be fairly constant. Crystals with lateral dimensions larger than 2 mm and thicker than 1 mm contain structural defects as twin lamellae and surface roughness. The results from the characterization of the grown crystals with X-ray diffraction and Raman spectroscopy are consistent with an assumption for a coexistence of an ordered monoclinic and a disordered orthorhombic phase.

  9. Growth of single crystals from solutions using semi-permeable membranes

    Science.gov (United States)

    Varkey, A. J.; Okeke, C. E.

    1983-05-01

    A technique suitable for growth of single crystals from solutions using semi-preamble membranes is described. Using this technique single crystals of copper sulphate, potassium bromide and ammonium dihydrogen phosphate have been successfully grown. Advantages of this technique over other methods are discussed.

  10. Microscopic Rate Constants of Crystal Growth from Molecular Dynamic Simulations Combined with Metadynamics

    Directory of Open Access Journals (Sweden)

    Dániel Kozma

    2012-01-01

    Full Text Available Atomistic simulation of crystal growth can be decomposed into two steps: the determination of the microscopic rate constants and a mesoscopic kinetic Monte Carlo simulation. We proposed a method to determine kinetic rate constants of crystal growth. We performed classical molecular dynamics on the equilibrium liquid/crystal interface of argon. Metadynamics was used to explore the free energy surface of crystal growth. A crystalline atom was selected at the interface, and it was displaced to the liquid phase by adding repulsive Gaussian potentials. The activation free energy of this process was calculated as the maximal potential energy density of the Gaussian potentials. We calculated the rate constants at different interfacial structures using the transition state theory. In order to mimic real crystallization, we applied a temperature difference in the calculations of the two opposite rate constants, and they were applied in kinetic Monte Carlo simulation. The novelty of our technique is that it can be used for slow crystallization processes, while the simple following of trajectories can be applied only for fast reactions. Our method is a possibility for determination of elementary rate constants of crystal growth that seems to be necessary for the long-time goal of computer-aided crystal design.

  11. Growth and study of barium oxalate single crystals in agar gel

    Indian Academy of Sciences (India)

    Barium oxalate was grown in agar gel at ambient temperature. The effect of various parameters like gel concentration, gel setting time and concentration of the reactants on the growth of these crystals was studied. Prismatic platy shaped spherulites and dendrites were obtained. The grown crystals were characterized by ...

  12. An injection modelocked Ti-sapphire laser for synchronous photoinjection

    International Nuclear Information System (INIS)

    Hovater, C.; Poelker, M.

    1997-01-01

    The CEBAF 4 GeV accelerator has recently begun delivering spin-polarized electrons for nuclear physics experiments. Spin-polarized electrons are emitted from a GaAs photocathode that is illuminated with pulsed laser light from a diode laser system synchronized to the injector chopping frequency (499 MHz). The present diode laser system is compact, reliable and relatively maintenance-free; however, output power is limited to less than 500 mW. In an effort to obtain higher average power and thereby prolong the effective operating lifetime of the source, they have constructed an injection modelocked Ti-sapphire laser with picosecond pulsewidths and gigahertz repetition rates. Modelocked operation is obtained through gain modulation within the Ti-sapphire crystal as a result of injection seeding with a gain-switched diode laser. Unlike conventional modelocked lasers, the pulse repetition rate of this laser can be discretely varied by setting the seed laser repetition rate equal to multiples of the Ti-sapphire laser cavity fundamental frequency. They observe pulse repetition rates from 223 MHz (fundamental) to 1,560 MHz (seventh harmonic) with average output power of 700 mW for all repetition rates. Pulsewidths ranged from 21 to 39 ps (FWHM) under various pump laser conditions

  13. Study on growth techniques and macro defects of large-size Nd:YAG laser crystal

    Science.gov (United States)

    Quan, Jiliang; Yang, Xin; Yang, Mingming; Ma, Decai; Huang, Jinqiang; Zhu, Yunzhong; Wang, Biao

    2018-02-01

    Large-size neodymium-doped yttrium aluminum garnet (Nd:YAG) single crystals were grown by the Czochralski method. The extinction ratio and wavefront distortion of the crystal were tested to determine the optical homogeneity. Moreover, under different growth conditions, the macro defects of inclusion, striations, and cracking in the as-grown Nd:YAG crystals were analyzed. Specifically, the inclusion defects were characterized using scanning electron microscopy and energy dispersive spectroscopy. The stresses of growth striations and cracking were studied via a parallel plane polariscope. These results demonstrate that improper growth parameters and temperature fields can enhance defects significantly. Thus, by adjusting the growth parameters and optimizing the thermal environment, high-optical-quality Nd:YAG crystals with a diameter of 80 mm and a total length of 400 mm have been obtained successfully.

  14. Monitoring and Characterization of Crystal Nucleation and Growth during Batch Crystallization

    NARCIS (Netherlands)

    Kadam, S.S.

    2012-01-01

    Batch crystallization is commonly used in pharmaceutical, agrochemical, specialty and fine chemicals industry. The advantages of batch crystallization lie in its ease of operation and the relatively simple equipment that can be used. On the other hand a major disadvantage associated with it is the

  15. Crystal growth, spectral and laser properties of Nd:LuAG single crystal

    International Nuclear Information System (INIS)

    Xu, X D; Meng, J Q; Cheng, Y; Li, D Z; Cheng, S S; Wu, F; Zhao, Z W; Wang, X D; Xu, J

    2009-01-01

    Nd:LuAG (Nd:Lu 3 Al 5 O 12 ) crystal was grown by the Czochralski method. X-ray powder diffraction experiments show that the Nd:LuAG crystal crystallizes in the cubic with space group Ia3d and has the cell parameter: a = 1.1907 nm, V = 1.6882 nm 3 . The absorption and fluorescence spectra of Nd:LuAG crystal at room temperature were investigated. With a fiber-coupled diode laser as pump source, the continuous-wave (CW) laser action of Nd:LuAG crystal was demonstrated. The maximum output power at 1064 nm was obtained to be 3.8 W under the incident pump power of 17.3 W, with the optical conversion efficiency 22.0% and the slope efficiency 25.7%

  16. Crystal growth, spectral and laser properties of Nd:LuAG single crystal

    Science.gov (United States)

    Xu, X. D.; Wang, X. D.; Meng, J. Q.; Cheng, Y.; Li, D. Z.; Cheng, S. S.; Wu, F.; Zhao, Z. W.; Xu, J.

    2009-09-01

    Nd:LuAG (Nd:Lu3Al5O12) crystal was grown by the Czochralski method. X-ray powder diffraction experiments show that the Nd:LuAG crystal crystallizes in the cubic with space group Ia3d and has the cell parameter: a = 1.1907 nm, V = 1.6882 nm3. The absorption and fluorescence spectra of Nd:LuAG crystal at room temperature were investigated. With a fiber-coupled diode laser as pump source, the continuous-wave (CW) laser action of Nd:LuAG crystal was demonstrated. The maximum output power at 1064 nm was obtained to be 3.8 W under the incident pump power of 17.3 W, with the optical conversion efficiency 22.0% and the slope efficiency 25.7%.

  17. Crystal growth, spectral and laser properties of Nd:LSAT single crystal

    Science.gov (United States)

    Hu, P. C.; Yin, J. G.; Zhao, C. C.; Gong, J.; He, X. M.; Zhang, L. H.; Liang, X. Y.; Hang, Y.

    2011-10-01

    Nd:(La, Sr)(Al, Ta)O3 (Nd:LSAT) crystal was grown by the Czochralski method. The absorption and fluorescence spectra of Nd:LSAT crystal at room temperature were investigated. With a fiber-coupled diode laser as pump source, the continuous-wave (CW) laser action of Nd:LSAT crystal was demonstrated. The result of diode-pumped laser operation of Nd:LSAT crystal single crystal is reported for what is to our knowledge the first time. The maximum output power at 1064 nm was obtained to be 165 mW under the incident pump power of 3 W, with the slope efficiency 10.9%.

  18. Influence of Crucible Support Rod on the Growth Rate and Temperature Gradient in a Bridgman Growth of Tin Crystal

    OpenAIRE

    IMASHIMIZU, Yuji; MIURA, Koji; KAMATA, Masaki; WATANABE, Jiro

    2003-01-01

    Bridgman growth of tincrystal was carried out in a graphite crucible that was fixed on a quartz support rod or a copper one. The growth rate and axial temperature distribution were examined by recording the temperature variation with time at each of four prescribed positions in the solid-liquidsystem during solidification, l) Actual growth rate of crystal increased with progress of solidification while the furnace elevated at a constant rate, but the tendency was different depending on the ty...

  19. A study on the growth of compound semiconductor single crystal by TOM technique

    International Nuclear Information System (INIS)

    Kim, H.C.; Kwon, S.I.; Chung, M.K.; Chang, J.S.

    1981-01-01

    This paper describes the merit of the HgI 2 single crystals obtained by solution growth, 2- and 3-region temperature growth, and temperature oscillation growth for soft γ-ray detectors which can be operated at room temperature. Special efforts are put on the design, construction, and operation of the TOM (Temperature Oscillation Method) single crystal growing furnace. Experimental results show that HgI 2 detectors fabricated by vapour phase growth method usually exhibit sufficient enough detector characteristics for soft γ-ray spectrometry. However, further investigation should be carried out to eliminate detector deterioration due to polarization effect. (author)

  20. Crystal structure, growth and nonlinear optical studies of isonicotinamide p-nitrophenol: A new organic crystal for optical limiting applications

    Science.gov (United States)

    Vijayalakshmi, A.; Vidyavathy, B.; Vinitha, G.

    2016-08-01

    Isonicotinamide p-nitrophenol (ICPNP), a new organic material, was synthesized using methanol solvent. Single crystals of ICPNP were grown using a slow evaporation solution growth technique. Crystal structure of ICPNP is elucidated by single crystal X-ray diffraction analysis. It belongs to monoclinic crystal system with space group of P21/c. It forms two dimensional networks by O-H…O, N-H…O and C-H…O hydrogen bonds. The molecular structure of ICPNP was further confirmed by Fourier transform infrared (FTIR) spectral analysis. The optical transmittance range and the lower cut-off wavelength (421 nm) with the optical band gap (2.90 eV) of the ICPNP crystal were determined by UV-vis-NIR spectral study. Thermal behavior of ICPNP was studied by thermo gravimetric and differential thermal analyses (TG/DTA). The relative dielectric permittivity was calculated for various temperature ranges. Laser damage threshold of ICPNP crystal was found to be 1.9 GW/cm2 using an Nd:YAG laser. A Z-scan technique was employed to measure the nonlinear absorption coefficient, nonlinear refractive index and nonlinear optical susceptibility. Optical limiting behavior of ICPNP was observed at 35 mW input power.

  1. Growth of binary solid solution single crystals and calculation of melt surface displacement velocity

    International Nuclear Information System (INIS)

    Agamaliyev, Z.A.; Tahirov, V.I.; Hasanov, Z.Y.; Quliyev, A.F.

    2007-01-01

    A binary solid solution single crystal growth method has been worked out. Cylinder feeding alloy with complex content distribution and truncated cone crucible are used. Second component distribution coefficient is more than unit. Content distribution along grown crystal is found by solving continuity equation. After reaching dynamic equilibrium state second component concentration in grown crystal is saturated the value of which is less than the average ona in the feeding alloy. Using the method Ge-Si perfect single crystals has been grown. Calculation method of melt surface displacement velocity has been offered as well

  2. Crystal growth and scintillation properties of Pr-doped SrI2 single crystals

    Science.gov (United States)

    Yokota, Yuui; Ito, Tomoki; Yoshino, Masao; Yamaji, Akihiro; Ohashi, Yuji; Kurosawa, Shunsuke; Kamada, Kei; Yoshikawa, Akira

    2018-04-01

    Pr-doped SrI2 (Pr:SrI2) single crystals with various Pr concentrations were grown by the halide-micro-pulling-down (H-μ-PD) method, and the scintillation properties were investigated. Pr1%:SrI2 single crystal with high transparency could be grown by the H-μ-PD method while Pr2, 3 and 5%:SrI2 single crystals included some cracks and opaque parts. In the photoluminescence spectrum of the Pr1%:SrI2 single crystal, an emission peak originated from the Pr3+ ion was observed around 435 nm while the radioluminescence spectra showed an emission peak around 535 nm for the undoped SrI2 and Pr:SrI2 single crystals. Light yields of Pr1, 2, 3 and 5%:SrI2 single crystals under γ-ray irradiation were 7700, 8700, 7200 and 6700 photons/MeV, respectively. Decay times of Pr1 and 2%:SrI2 single crystals under γ-ray irradiation were 55.9 and 35.0 ns of the fast decay component, and 435 and 408 ns of the slow decay component, respectively.

  3. GROWTH RATE DISPERSION (GRD OF THE (010 FACE OF BORAX CRYSTALS IN FLOWING SOLUTION

    Directory of Open Access Journals (Sweden)

    Suharso Suharso

    2010-06-01

    Full Text Available The growth rates of borax crystals from aqueous solutions in the (010 direction at various flow rates were measured. The observed variations of the growth rate can be represented by a normal distribution.  It was found that there is no correlation between growth rate distribution and solution flow under these experimental conditions.   Keywords: Growth rate dispersion (GRD, borax, flow rate

  4. Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique

    Science.gov (United States)

    Sabanskis, A.; Virbulis, J.

    2018-05-01

    Mathematical modelling is employed to numerically analyse the dynamics of the Czochralski (CZ) silicon single crystal growth. The model is axisymmetric, its thermal part describes heat transfer by conduction and thermal radiation, and allows to predict the time-dependent shape of the crystal-melt interface. Besides the thermal field, the point defect dynamics is modelled using the finite element method. The considered process consists of cone growth and cylindrical phases, including a short period of a reduced crystal pull rate, and a power jump to avoid large diameter changes. The influence of the thermal stresses on the point defects is also investigated.

  5. Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth. II - Processing strategies

    Science.gov (United States)

    Derby, J. J.; Brown, R. A.

    1986-01-01

    The pseudosteady-state heat transfer model developed in a previous paper is augmented with constraints for constant crystal radius and melt/solid interface deflection. Combinations of growth rate, and crucible and bottom-heater temperatures are tested as processing parameters for satisfying the constrained thermal-capillary problem over a range of melt volumes corresponding to the sequence occuring during the batchwise Czochralski growth of a small-diameter silicon crystal. The applicability of each processing strategy is judged by the range of existence of the solution, in terms of melt volume and the values of the axial and radial temperature gradients in the crystal.

  6. Crystal growth, spectroscopic and laser properties of Tm:LuAG crystal

    Science.gov (United States)

    Xu, X. D.; Wang, X. D.; Lin, Z. F.; Cheng, Y.; Li, D. Z.; Cheng, S. S.; Wu, F.; Zhao, Z. W.; Gao, C. Q.; Gao, M. W.; Xu, J.

    2009-11-01

    Tm:Lu3Al5O12 (Tm:LuAG) crystal was grown by the Czochralski method. The segregation coefficient was measured by Inductively Coupled Plasma Atomic Emission Spectrometer. The cell parameters were analyzed with X-ray powder diffraction experiments. The absorption and fluorescence spectra of Tm:LuAG crystal at room temperature were investigated. With a 20 W fiber-coupled diode laser as pump source, the continuous-wave (CW) laser action of Tm:LuAG crystal was demonstrated. The maximum output power at 2020 nm was obtained to be 3.04 W, and the slope efficiency was 25.3%.

  7. Crystal growth and characterization of a semiorganic nonlinear optical single crystal of gamma glycine

    International Nuclear Information System (INIS)

    Prakash, J. Thomas Joseph; Kumararaman, S.

    2008-01-01

    Gamma glycine has been successfully synthesized by taking glycine and potassium chloride and single crystals have been grown by solvent evaporation method for the first time. The grown single crystals have been analyzed with XRD, Fourier transform infrared (FTIR), and thermo gravimetric and differential thermal analyses (TG/DTA) measurements. Its mechanical behavior has been assessed by Vickers microhardness measurements. Its nonlinear optical property has been tested by Kurtz powder technique. Its optical behavior was examined by UV-vis., and found that the crystal is transparent in the region between 240 and 1200 nm. Hence, it may be very much useful for the second harmonic generation (SHG) applications

  8. Small-Angle Neutron Scattering Investigation of Growth Modifiers on Hydrate Crystal Surfaces

    Science.gov (United States)

    Sun, Thomas; Hutter, Jeffrey L.; Lin, M.; King, H. E., Jr.

    1998-03-01

    Hydrates are crystals consisting of small molecules enclathrated within an ice-like water cage. Suppression of their growth is important in the oil industry. The presence of small quantities of specific polymers during hydrate crystallization can induce a transition from an octahedral to planar growth habit. This symmetry breaking is surprising because of the suppression of two 111 planes relative to the other six crystallographically equivalent faces. To better understand the surface effects leading to this behavior, we have studied the surface adsorption of these growth-modifing polymers onto the hydrate crytals using SANS. The total hydrate surface area, as measured by Porod scattering, increases in the presence of the growth modifier, but, no significant increase in polymer concentration on the crystal surfaces is found. Implications for possible growth mechanisms will be discussed.

  9. Potassium-cobalt sulphate crystal growth assisted by low frequency vibrations

    Science.gov (United States)

    Sadovsky, A.; Ermochenkov, I.; Dubovenko, E.; Sukhanova, E.; Bebyakin, M.; Dubov, V.; Avetissov, I.

    2018-02-01

    Single crystals of K2Co(SO4)2·6H2O were grown from solution using the temperature reduction method enhanced by the axial low frequency vibration control technique (AVC-technique). Physical modeling of heat-mass transfer in solution under the AVC action was performed. The growth rate of the AVC grown crystal was found to be twice that of the crystal grown under natural convection conditions. Analysis of spectral characteristics (absorption and Raman spectra) as well as structural properties (dislocation density and microhardness) of the grown crystals showed the significant superiority of the AVC technique for the growth of K2Co(SO4)2·6H2O crystals.

  10. Crystal growth of calcium carbonate in silk fibroin/sodium alginate hydrogel

    Science.gov (United States)

    Ming, Jinfa; Zuo, Baoqi

    2014-01-01

    As known, silk fibroin-like protein plays a pivotal role during the formation of calcium carbonate (CaCO3) crystals in the nacre sheets. Here, we have prepared silk fibroin/sodium alginate nanofiber hydrogels to serve as templates for calcium carbonate mineralization. In this experiment, we report an interesting finding of calcium carbonate crystal growth in the silk fibroin/sodium alginate nanofiber hydrogels by the vapor diffusion method. The experimental results indicate calcium carbonate crystals obtained from nanofiber hydrogels with different proportions of silk fibroin/sodium alginate are mixture of calcite and vaterite with unusual morphologies. Time-dependent growth study was carried out to investigate the crystallization process. It is believed that nanofiber hydrogels play an important role in the process of crystallization. This study would help in understanding the function of organic polymers in natural mineralization, and provide a novel pathway in the design and synthesis of new materials related unique morphology and structure.

  11. Crystal growth and magnetic properties of equiatomic CeAl

    Science.gov (United States)

    Das, Pranab Kumar; Thamizhavel, A.

    2015-03-01

    Single crystal of CeAl has been grown by flux method using Ce-Al self-flux. Several needle like single crystals were obtained and the length of the needle corresponds to the [001] crystallographic direction. Powder x-ray diffraction revealed that CeAl crystallizes in orthorhombic CrB-type structure with space group Cmcm (no. 63). The magnetic properties have been investigated by means of magnetic susceptibility, isothermal magnetization, electrical transport, and heat capacity measurements. CeAl is found to order antiferromagnetically with a Neel temperature TN = 10 K. The magnetization data below the ordering temperature reveals two metamagentic transitions for fields less than 20 kOe. From the inverse magnetic susceptibility an effective moment of 2.66 μB/Ce has been estimated, which indicates that Ce is in its trivalent state. Electrical resistivity data clearly shows a sharp drop at 10 K due to the reduction of spin disorder scattering of conduction electrons thus confirming the magnetic ordering. The estimated residual resistivity ratio (RRR) is 33, thus indicating a good quality of the single crystal. The bulk nature of the magnetic ordering is also confirmed by heat capacity data. From the Schottky anomaly of the heat capacity we have estimated the crystal field level splitting energies of the (2J + 1) degenerate ground state as 25 K and 175 K respectively for the fist and second excited states.

  12. Protein crystal growth results from the United States Microgravity Laboratory-1 mission

    Science.gov (United States)

    Delucas, Lawrence J.; Moore, K. M.; Vanderwoerd, M.; Bray, T. L.; Smith, C.; Carson, M.; Narayana, S. V. L.; Rosenblum, W. M.; Carter, D.; Clark, A. D, Jr.

    1994-01-01

    Protein crystal growth experiments have been performed by this laboratory on 18 Space Shuttle missions since April, 1985. In addition, a number of microgravity experiments also have been performed and reported by other investigators. These Space Shuttle missions have been used to grow crystals of a variety of proteins using vapor diffusion, liquid diffusion, and temperature-induced crystallization techniques. The United States Microgravity Laboratory - 1 mission (USML-1, June 25 - July 9, 1992) was a Spacelab mission dedicated to experiments involved in materials processing. New protein crystal growth hardware was developed to allow in orbit examination of initial crystal growth results, the knowledge from which was used on subsequent days to prepare new crystal growth experiments. In addition, new seeding hardware and techniques were tested as well as techniques that would prepare crystals for analysis by x-ray diffraction, a capability projected for the planned Space Station. Hardware that was specifically developed for the USML-1 mission will be discussed along with the experimental results from this mission.

  13. Unidirectional growth and characterization of L-arginine monohydrochloride monohydrate single crystals

    International Nuclear Information System (INIS)

    Sangeetha, K.; Babu, R. Ramesh; Bhagavannarayana, G.; Ramamurthi, K.

    2011-01-01

    Highlights: → L-Arginine monohydrochloride monohydrate (LAHCl) single crystal was grown successfully by unidirectional solution growth method for the first time. → High crystalline perfection was observed for UDS grown crystal compared to CS grown crystal. → The optical transparency and mechanical stability are high for UDS grown LAHCl single crystal. → Optical birefringence measurement on this material. → The piezoelectric resonance frequencies observation - first time observation on this material. - Abstract: L-Arginine monohydrochloride monohydrate (LAHCl) single crystals were grown successfully by conventional and unidirectional solution growth methods. The crystalline perfection of grown crystals was analyzed by high-resolution X-ray diffraction. The linear optical transmittance, mechanical stability of conventional and unidirectional grown LAHCl single crystals were analyzed and compared along (0 0 1) plane. The refractive index and birefringence of LAHCl single crystals were also measured using He-Ne laser source. From the dielectric studies, piezoelectric resonance frequencies were observed in kHz frequency range for both conventional and unidirectional grown LAHCl single crystals along (0 0 1) plane.

  14. Growth of HfO{sub x} thin films by reactive molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany)

    2008-07-01

    Thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. The conditions for the growth of single oriented hafnium oxide thin films have been established. Hafnium oxide thin films were characterized by X-ray diffraction and optical absorption measurements. It was found that hafnium oxide thin films grown on r-cut sapphire were (00l) oriented whereas, on c-cut sapphire, hafnium oxide films showed different orientations depending on the growth temperature and oxidation conditions. The hafnium oxide films grown at higher temperature and under strong oxidation conditions yielded (001) oriented films on c-cut sapphire whereas slightly weaker oxidation condition leads to (111) oriented hafnium oxide films. The bandgap deducted from optical absorption measurement carried out on hafnium oxide films grown under optimized conditions agreed well with the values reported in literature. A range of oxygen deficient thin films of hafnium oxide were also grown on single crystal sapphire substrates in order to investigate the effect of oxygen vacancies on dielectric properties of hafnium oxide. The oxygen deficient thin films of hafnium oxide show a decrease in bandgap with increase in oxygen deficiency.

  15. Crystal growth, spectral properties, and laser demonstration of laser crystal Nd:LYSO

    International Nuclear Information System (INIS)

    Li, D Z; Xu, X D; Zhou, D H; Xia, C T; Wu, F; Zhuang, S D; Wang, Z P; Xu, J

    2010-01-01

    A Nd:LYSO crystal has been grown by the Czochralski technique. The cell parameters were analyzed with X-ray diffraction (XRD). The Judd-Ofelt intense parameters Ω 2,4,6 were obtained to be 2.65, 5.75, and 7.37×10 -20 cm 2 , respectively. The absorption and emission cross sections and the branching ratios were calculated. The large absorption cross section (6.14×10 -20 cm 2 ) and broad absorption band (5 nm) around 811 nm indicate that this crystal can be pumped efficiently by laser diodes. The broad emission band from the 4 F 3/2 multiplet shows that the crystal is a promising medium for ultrashort pulse lasers. Pumped by a laser diode, the maximum 814 mW continuous-wave laser output has been obtained with a slope efficiency of 28.9%. All the results show that this crystal is a promising laser material

  16. Effect of amino acid doping on the growth and ferroelectric properties of triglycine sulphate single crystals

    International Nuclear Information System (INIS)

    Raghavan, C.M.; Sankar, R.; Mohan Kumar, R.; Jayavel, R.

    2008-01-01

    Effect of amino acids (L-leucine and isoleucine) doping on the growth aspects and ferroelectric properties of triglycine sulphate crystals has been studied. Pure and doped crystals were grown from aqueous solution by low temperature solution growth technique. The cell parameter values were found to significantly vary for doped crystals. Fourier transform infrared analysis confirmed the presence of functional groups in the grown crystal. Morphology study reveals that amino acid doping induces faster growth rate along b-direction leading to a wide b-plane and hence suitable for pyroelectric detector applications. Ferroelectric domain structure has been studied by atomic force microscopy and hysteresis measurements reveal an increase of coercive field due to the formation of single domain pattern

  17. Defects in silicon effect on device performance and relationship to crystal growth conditions

    Science.gov (United States)

    Jastrzebski, L.

    1985-01-01

    A relationship between material defects in silicon and the performance of electronic devices will be described. A role which oxygen and carbon in silicon play during the defects generation process will be discussed. The electronic properties of silicon are a strong function of the oxygen state in the silicon. This state controls mechanical properties of silicon efficiency for internal gettering and formation of defects in the device's active area. In addition, to temperature, time, ambience, and the cooling/heating rates of high temperature treatments, the oxygen state is a function of the crystal growth process. The incorporation of carbon and oxygen into silicon crystal is controlled by geometry and rotation rates applied to crystal and crucible during crystal growths. Also, formation of nucleation centers for oxygen precipitation is influenced by the growth process, although there is still a controversy which parameters play a major role. All these factors will be reviewed with special emphasis on areas which are still ambiguous and controversial.

  18. Development of a model for on-line control of crystal growth by the AHP method

    Science.gov (United States)

    Gonik, M. A.; Lomokhova, A. V.; Gonik, M. M.; Kuliev, A. T.; Smirnov, A. D.

    2007-05-01

    The possibility to apply a simplified 2D model for heat transfer calculations in crystal growth by the axial heat close to phase interface (AHP) method is discussed in this paper. A comparison with global heat transfer calculations with the CGSim software was performed to confirm the accuracy of this model. The simplified model was shown to provide adequate results for the shape of the melt-crystal interface and temperature field in an opaque (Ge) and a transparent crystal (CsI:Tl). The model proposed is used for identification of the growth setup as a control object, for synthesis of a digital controller (PID controller at the present stage) and, finally, in on-line simulations of crystal growth control.

  19. The crystallization of a solid solution in a solvent and the stability of a growth interface

    International Nuclear Information System (INIS)

    Malmejac, Yves

    1971-03-01

    The potential uses of germanium-silicon alloys as thermoelectric generators in hitherto unexploited temperature ranges initiated the present study. Many delicate problems are encountered in the classical methods of preparation. An original technique was sought for crystallization in a metallic solvent. The thermodynamic equilibria between the various phases of the ternary System used were studied in order to justify the method used. The conditions (temperature and composition) were determined in which the cooling of a ternary liquid mixture induces the precipitation of a binary solid solution with the desired composition. If large crystals are to be obtained from the solid solution, metallic solvent precipitation must be replaced by a mono-directional solvent crystallization. The combined effect of a certain number of simple physical phenomena on the stability of a crystal liquid interface was studied: the morphological stability of the crystal growth interface is the first step towards obtaining perfect crystals. (author) [fr

  20. Time-Lapse, in Situ Imaging of Ice Crystal Growth Using Confocal Microscopy.

    Science.gov (United States)

    Marcellini, Moreno; Noirjean, Cecile; Dedovets, Dmytro; Maria, Juliette; Deville, Sylvain

    2016-11-30

    Ice crystals nucleate and grow when a water solution is cooled below its freezing point. The growth velocities and morphologies of the ice crystals depend on many parameters, such as the temperature of ice growth, the melting temperature, and the interactions of solutes with the growing crystals. Three types of morphologies may appear: dendritic, cellular (or fingerlike), or the faceted equilibrium form. Understanding and controlling which type of morphology is formed is essential in several domains, from biology to geophysics and materials science. Obtaining, in situ, three dimensional observations without introducing artifacts due to the experimental technique is nevertheless challenging. Here we show how we can use laser scanning confocal microscopy to follow in real-time the growth of smoothed and faceted ice crystals in zirconium acetate solutions. Both qualitative and quantitative observations can be made. In particular, we can precisely measure the lateral growth velocity of the crystals, a measure otherwise difficult to obtain. Such observations should help us understand the influence of the parameters that control the growth of ice crystals in various systems.

  1. Growth Rate and Morphology of a Single Calcium Carbonate Crystal on Polysulfone Film Measured with Time Lapse Raman Micro Spectroscopy

    NARCIS (Netherlands)

    Liszka, B.; Lenferink, Aufrid T.M.; Otto, Cornelis

    2016-01-01

    The growth of single, self- nucleated calcium carbonate crystals on a polysulfone (PSU) film was investigated with high resolution, time lapse Raman imaging. The Raman images were acquired on the interface of the polymer with the crystal. The growth of crystals could thus be followed in time. PSU is

  2. Investigating calcite growth rates using a quartz crystal microbalance with dissipation (QCM-D)

    Science.gov (United States)

    Cao, Bo; Stack, Andrew G.; Steefel, Carl I.; DePaolo, Donald J.; Lammers, Laura N.; Hu, Yandi

    2018-02-01

    Calcite precipitation plays a significant role in processes such as geological carbon sequestration and toxic metal sequestration and, yet, the rates and mechanisms of calcite growth under close to equilibrium conditions are far from well understood. In this study, a quartz crystal microbalance with dissipation (QCM-D) was used for the first time to measure macroscopic calcite growth rates. Calcite seed crystals were first nucleated and grown on sensors, then growth rates of calcite seed crystals were measured in real-time under close to equilibrium conditions (saturation index, SI = log ({Ca2+}/{CO32-}/Ksp) = 0.01-0.7, where {i} represent ion activities and Ksp = 10-8.48 is the calcite thermodynamic solubility constant). At the end of the experiments, total masses of calcite crystals on sensors measured by QCM-D and inductively coupled plasma mass spectrometry (ICP-MS) were consistent, validating the QCM-D measurements. Calcite growth rates measured by QCM-D were compared with reported macroscopic growth rates measured with auto-titration, ICP-MS, and microbalance. Calcite growth rates measured by QCM-D were also compared with microscopic growth rates measured by atomic force microscopy (AFM) and with rates predicted by two process-based crystal growth models. The discrepancies in growth rates among AFM measurements and model predictions appear to mainly arise from differences in step densities, and the step velocities were consistent among the AFM measurements as well as with both model predictions. Using the predicted steady-state step velocity and the measured step densities, both models predict well the growth rates measured using QCM-D and AFM. This study provides valuable insights into the effects of reactive site densities on calcite growth rate, which may help design future growth models to predict transient-state step densities.

  3. Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

    Science.gov (United States)

    Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

    2015-04-01

    Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.

  4. On the growth of calcium tartrate tetrahydrate single crystals

    Indian Academy of Sciences (India)

    2016-08-26

    Aug 26, 2016 ... The grown crystals were characterized by atomic absorption spectroscopy (AAS), X-ray diffraction analysis (XRD), microhardness measurement, Fourier transform infrared spectroscopy (FTIR), thermogravimetry (TG) and differential thermal analysis (DTA). The results obtained are compared with the ...

  5. Crystal growth and characterization of calcium metaborate scintillators

    Czech Academy of Sciences Publication Activity Database

    Fujimoto, Y.; Yanagida, T.; Kawaguchi, N.; Fukuda, K.; Totsuka, D.; Watanabe, K.; Yamazaki, A.; Chani, V.; Nikl, Martin; Yoshikawa, A.

    2013-01-01

    Roč. 703, MAR (2013), s. 7-10 ISSN 0168-9002 Institutional support: RVO:68378271 Keywords : Czochralski method * single crystal * scintillator * calcium metaborate * luminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.316, year: 2013

  6. Phonon-enhanced crystal growth and lattice healing

    Science.gov (United States)

    Buonassisi, Anthony; Bertoni, Mariana; Newman, Bonna

    2013-05-28

    A system for modifying dislocation distributions in semiconductor materials is provided. The system includes one or more vibrational sources for producing at least one excitation of vibrational mode having phonon frequencies so as to enhance dislocation motion through a crystal lattice.

  7. Growth morphology of zinc tris(thiourea) sulphate crystals

    Indian Academy of Sciences (India)

    computing cohesive energies cannot be used for crystals having too large a number of atoms in the unit .... The final distribution of the electron cloud is .... We checked the newly developed computer code for reliability by testing it for a large.

  8. On the growth of calcium tartrate tetrahydrate single crystals

    Indian Academy of Sciences (India)

    . Calcium formate mixed with formic acid was taken as the supernatant solution. It was observed that the nucleation density was reduced and the size of the crystals was improved to a large extent compared to the conventional way of growing ...

  9. Sapphire capillary interstitial irradiators for laser medicine

    Science.gov (United States)

    Shikunova, I. A.; Dolganova, I. N.; Dubyanskaya, E. N.; Mukhina, E. E.; Zaytsev, K. I.; Kurlov, V. N.

    2018-04-01

    In this paper, we demonstrate instruments for laser radiation delivery based on sapphire capillary needles. Such sapphire irradiators (introducers) can be used for various medical applications, such as photodynamic therapy, laser hyperthermia, laser interstitial thermal therapy, and ablation of tumors of various organs. Unique properties of sapphire allow for effective redistribution of the heat, generated in biological tissues during their exposure to laser radiation. This leads to homogeneous distribution of the laser irradiation around the needle, and lower possibility of formation of the overheating focuses, as well as the following non-transparent thrombi.

  10. L-alanine distribution in the growth pyramids of TGS crystals and its influence on the growth, switching and domain structure

    International Nuclear Information System (INIS)

    Brezina, B.; Havrankova, M.

    1985-01-01

    The full-faced crystals of triglycine sulphate (TGS) and deuterated homologs substituted by L-alanine (LATGS and LADTGS, resp.) were grown from growth solutions with various concentrations of the substituent. The distribution of L, alanine (L,al) in various growth pyramids of crystals was measured by the electrical switching method. The stability of domain structure of doped crystals was studied by the liquid crystal method. (author)

  11. The synergy of modeling and novel experiments for melt crystal growth research

    Science.gov (United States)

    Derby, Jeffrey J.

    2018-05-01

    Computational modeling and novel experiments, when performed together, can enable the identification of new, fundamental mechanisms important for the growth of bulk crystals from the melt. In this paper, we present a compelling example of this synergy via the discovery of previously unascertained physical mechanisms that govern the engulfment of silicon carbide particles during the growth of crystalline silicon.

  12. Interfacial morphologies and growth modes of F.C.C. metallic crystals from liquid alloys

    International Nuclear Information System (INIS)

    Camel, Denis

    1980-01-01

    Equilibrium and growth morphologies of f.c.c. metallic crystals in contact with liquid alloys have been observed in-situ using transmission electron microscopy. These morphologies have been discussed in terms of atomic interfacial structure and growth mechanisms with the help of a statistical thermodynamic model which takes into account the effects of chemical interactions and interfacial adsorption. (author) [fr

  13. Lattice Boltzmann Simulation of Water Isotope Fractionation During Growth of Ice Crystals in Clouds

    Science.gov (United States)

    Lu, G.; Depaolo, D.; Kang, Q.; Zhang, D.

    2006-12-01

    The isotopic composition of precipitation, especially that of snow, plays a special role in the global hydrological cycle and in reconstruction of past climates using polar ice cores. The fractionation of the major water isotope species (HHO, HDO, HHO-18) during ice crystal formation is critical to understanding the global distribution of isotopes in precipitation. Ice crystal growth in clouds is traditionally treated with a spherically- symmetric steady state diffusion model, with semi-empirical modifications added to account for ventilation and for complex crystal morphology. Although it is known that crystal growth rate, which depends largely on the degree of vapor over-saturation, determines crystal morphology, there are no existing quantitative models that directly relate morphology to the vapor saturation factor. Since kinetic (vapor phase diffusion-controlled) isotopic fractionation also depends on growth rate, there should be a direct relationship between vapor saturation, crystal morphology, and crystal isotopic composition. We use a 2D Lattice-Boltzmann model to simulate diffusion-controlled ice crystal growth from vapor- oversaturated air. In the model, crystals grow solely according to the diffusive fluxes just above the crystal surfaces, and hence crystal morphology arises from the initial and boundary conditions in the model and does not need to be specified a priori. The input parameters needed are the isotope-dependent vapor deposition rate constant (k) and the water vapor diffusivity in air (D). The values of both k and D can be computed from kinetic theory, and there are also experimentally determined values of D. The deduced values of k are uncertain to the extent that the sticking coefficient (or accommodation coefficient) for ice is uncertain. The ratio D/k is a length that determines the minimum scale of dendritic growth features and allows us to scale the numerical calculations to atmospheric conditions using a dimensionless Damkohler number

  14. Three-dimensional modelling of thermal stress in floating zone silicon crystal growth

    Science.gov (United States)

    Plate, Matiss; Krauze, Armands; Virbulis, Jānis

    2018-05-01

    During the growth of large diameter silicon single crystals with the industrial floating zone method, undesirable level of thermal stress in the crystal is easily reached due to the inhomogeneous expansion as the crystal cools down. Shapes of the phase boundaries, temperature field and elastic material properties determine the thermal stress distribution in the solid mono crystalline silicon during cylindrical growth. Excessive stress can lead to fracture, generation of dislocations and altered distribution of intrinsic point defects. Although appearance of ridges on the crystal surface is the decisive factor of a dislocation-free growth, the influence of these ridges on the stress field is not completely clear. Here we present the results of thermal stress analysis for 4” and 5” diameter crystals using a quasi-stationary three dimensional mathematical model including the material anisotropy and the presence of experimentally observed ridges which cannot be addressed with axis-symmetric models. The ridge has a local but relatively strong influence on thermal stress therefore its relation to the origin of fracture is hypothesized. In addition, thermal stresses at the crystal rim are found to increase for a particular position of the crystal radiation reflector.

  15. Advances in the Growth and Characterization of Relaxor-PT-Based Ferroelectric Single Crystals

    Directory of Open Access Journals (Sweden)

    Jun Luo

    2014-07-01

    Full Text Available Compared to Pb(Zr1−xTixO3 (PZT polycrystalline ceramics, relaxor-PT single crystals offer significantly improved performance with extremely high electromechanical coupling and piezoelectric coefficients, making them promising materials for piezoelectric transducers, sensors and actuators. The recent advances in crystal growth and characterization of relaxor-PT-based ferroelectric single crystals are reviewed in this paper with emphases on the following topics: (1 the large crystal growth of binary and ternary relaxor-PT-based ferroelectric crystals for commercialization; (2 the composition segregation in the crystals grown from such a solid-solution system and possible solutions to reduce it; (3 the crystal growth from new binary and ternary compositions to expand the operating temperature and electric field; (4 the crystallographic orientation dependence and anisotropic behaviors of relaxor-PT-based ferroelectriccrystals; and (5 the characterization of the dielectric, elastic and piezoelectric properties of the relaxor-PT-based ferroelectriccrystals under small and large electric fields.

  16. Crystal growth, spectroscopic characterization and laser performance of Tm/Mg:LiNbO3 crystal

    Science.gov (United States)

    Zhang, P. X.; Yin, J. G.; Zhang, R.; Li, H. Q.; Xu, J. Q.; Hang, Y.

    2014-03-01

    A Tm, Mg co-doped LiNbO3 crystal was grown by the traditional Czochralski method. The room-temperature absorption, photo-luminescence spectra and fluorescence lifetime of Tm3+ ions in the crystal have been investigated. The experimental results show that the co-doped of MgO can lead to the lengthening of the measured fluorescence lifetime of the upper Tm3+:3F4 level. Based on the Judd-Ofelt approach, the intensity parameters Ω2,4,6 of Tm3+ were calculated to be Ω2 (6.29 × 10-20 cm2), Ω4 (0.54 × 10-20 cm2) and Ω6 (0.79 × 10-20 cm2). Other spectroscopic parameters that relate to laser performance were also obtained. Non-photorefractive continuous wave laser operation with a Tm, Mg:LiNbO3 single crystal is demonstrated at room temperature for the first time. We obtained 1.026 W output power at 1.885 μm with a slope efficiency of near 14%, which, to the best of our knowledge, is the largest output power and the highest slope efficiency obtained for this crystal thus far. The output power was observed to be stable, and the crystal showed no sign of photorefractive damage.

  17. Air-void embedded GaN-based light-emitting diodes grown on laser drilling patterned sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Hao; Li, Yufeng; Wang, Shuai; Feng, Lungang; Xiong, Han; Yun, Feng, E-mail: fyun2010@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics and Information Technology, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Su, Xilin [Shaanxi Supernova Lighting Technology Co., Ltd., Xi’an, Shaanxi 710075 (China)

    2016-07-15

    Air-void structure was introduced in GaN-based blue light-emitting diodes (LED) with one-step growth on periodic laser drilling patterned sapphire substrate, which free of any photolithography or wet/dry etching process. The influence of filling factors (FF) of air-void on crystal quality and optical performance were investigate. Transmission electron microscopy images and micro-Raman spectroscopy indicated that the dislocation was bended and the partially compressed strain was released. When FF was 55.43%, compared with the LED structure grown on flat sapphire substrate, the incorporation of air-void was observed to reduce the compressed stress of ∼20% and the luminance intensity has improved by 128%. Together with the simulated reflection intensity enhancement by finite difference time-domain (FDTD) method, we attribute the enhanced optical performance to the combined contribution of strong back-side light reflection of air-void and better GaN epitaxial quality. This approach provides a simple replacement to the conventional air-void embedded LED process.

  18. Protein nanocrystallography: growth mechanism and atomic structure of crystals induced by nanotemplates.

    Science.gov (United States)

    Pechkova, E; Vasile, F; Spera, R; Fiordoro, S; Nicolini, C

    2005-11-01

    Protein nanocrystallography, a new technology for crystal growth based on protein nanotemplates, has recently been shown to produce diffracting, stable and radiation-resistant lysozyme crystals. This article, by computing these lysozyme crystals' atomic structures, obtained by the diffraction patterns of microfocused synchrotron radiation, provides a possible mechanism for this increased stability, namely a significant decrease in water content accompanied by a minor but significant alpha-helix increase. These data are shown to be compatible with the circular dichroism and two-dimensional Fourier transform spectra of high-resolution H NMR of proteins dissolved from the same nanotemplate-based crystal versus those from a classical crystal. Finally, evidence for protein direct transfer from the nanotemplate to the drop and the participation of the template proteins in crystal nucleation and growth is provided by high-resolution NMR spectrometry and mass spectrometry. Furthermore, the lysozyme nanotemplate appears stable up to 523 K, as confirmed by a thermal denaturation study using spectropolarimetry. The overall data suggest that heat-proof lysozyme presence in the crystal provides a possible explanation of the crystal's resistance to synchrotron radiation.

  19. Growth and characterization of hexaaquacobalt(II) dipotassium tetrahydrogen tetra-o-phthalate tetrahydrate crystals

    Energy Technology Data Exchange (ETDEWEB)

    Muthu, K. [Department of Chemistry, Annamalai University, Annamalainagar 608 002 (India); Bhagavannarayana, G. [National Physical Laboratory (CSIR), New Delhi 110 012 (India); Mahadevan, C.K. [Physics Research Centre, S.T. Hindu College, Nagercoil 629002 (India); Meenakshisundaram, S.P., E-mail: aumats2009@gmail.com [Department of Chemistry, Annamalai University, Annamalainagar 608 002 (India)

    2013-05-15

    Single crystals of hexaaquacobalt(II) dipotassium tetrahydrogen tetra-o-phthalate tetrahydrate K{sub 2}[Co(H{sub 2}O){sub 6}](C{sub 8}H{sub 5}O{sub 4}){sub 4}·4H{sub 2}O (PCHP), a semiorganic light-rose colored crystal of size ∼38 × 16 × 4 mm{sup 3} have been grown by slow evaporation solution growth technique. The lattice parameters of the as-grown crystals were obtained by single crystal X-ray diffraction analysis. The functional groups of the phthalate complex were confirmed by Fourier transform infrared spectroscopy analysis. The UV–Vis optical absorption spectrum of PCHP shows the lower optical cut-off at ∼300 nm and the crystal was transparent in the visible region. The structural perfection of the grown crystal has been analyzed by high-resolution X-ray diffraction (HRXRD) rocking curves (DC). The DC contains multi-peaks showing the structural grain boundaries. The dielectric, thermal and mechanical behaviors of the specimen were also studied. - Highlights: ► Bulk growth of large size phthalate complex crystals. ► Crystalline perfection of the grown crystal has been determined. ► HRXRD curves compared with pure material and the reasons are analyzed.

  20. Detection of beryllium treatment of natural sapphires by NRA

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, P.C., E-mail: carolina.gutierrez@uam.e [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Ynsa, M.-D.; Climent-Font, A. [Centro de Micro-Analisis de Materiales (CMAM), Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Dpto. Fisica Aplicada C-12, Universidad Autonoma de Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Calligaro, T. [Centre de Recherche et de Restauration des musees de France C2RMF, CNRS-UMR171, 14 quai Francois Mitterrand, 75001 Paris (France)

    2010-06-15

    Since the 1990's, artificial treatment of natural sapphires (Al{sub 2}O{sub 3} crystals coloured by impurities) by diffusion of beryllium at high temperature has become a growing practice. This process permits to enhance the colour of these gemstones, and thus to increase their value. Detection of such a treatment - diffusion of tens of {mu}g/g of beryllium in Al{sub 2}O{sub 3} crystals - is usually achieved using high sensitivity techniques like laser-ablation inductively coupled plasma mass spectrometry (LA-ICP/MS) or laser-induced breakdown spectrometry (LIBS) which are unfortunately micro-destructive (leaving 50-100-{mu}m diameter craters on the gems). The simple and non-destructive alternative method proposed in this work is based on the nuclear reaction {sup 9}Be({alpha}, n{gamma}){sup 12}C with an external helium ion beam impinging on the gem directly placed in air. The 4439 keV prompt {gamma}-ray tagging Be atoms are detected with a high efficiency bismuth germanate scintillator. Beam dose is monitored using the 2235 keV prompt {gamma}-ray produced during irradiation by the aluminium of the sapphire matrix through the {sup 27}Al({alpha}, p{gamma}){sup 30}Si nuclear reaction. The method is tested on a series of Be-treated sapphires previously analyzed by LA-ICP/MS to determine the optimal conditions to obtain a peak to background appropriate to reach the required {mu}g/g sensitivity. Using a 2.8-MeV external He beam and a beam dose of 200 {mu}C, beryllium concentrations from 5 to 16 {mu}g/g have been measured in the samples, with a detection limit of 1 {mu}g/g.

  1. Transformation of a Plane Wavefront in Hemispherical Lenses Made of Leuco-Sapphire

    Science.gov (United States)

    Vetrov, V. N.; Ignatenkov, B. A.; Yakobson, V. E.

    2018-01-01

    An algorithm for wavefront calculation of ordinary and extraordinary waves after propagation through hemispherical components made of a uniaxial crystal is developed. The influence of frequency dispersion of n o and n e , as well as change in the direction of the optic axis of the crystal, on extraordinary wavefront in hemispheres made of from leuco-sapphire and a plastically deformed analog thereof is determined.

  2. Imaging transport phenomena during lysozyme protein crystal growth by the hanging drop technique

    Science.gov (United States)

    Sethia Gupta, Anamika; Gupta, Rajive; Panigrahi, P. K.; Muralidhar, K.

    2013-06-01

    The present study reports the transport process that occurs during the growth of lysozyme protein crystals by the hanging drop technique. A rainbow schlieren technique has been employed for imaging changes in salt concentration. A one dimensional color filter is used to record the deflection of the light beam. An optical microscope and an X-ray crystallography unit are used to characterize the size, tetragonal shape and Bravais lattice constants of the grown crystals. A parametric study on the effect of drop composition, drop size, reservoir height and number of drops on the crystal size and quality is reported. Changes in refractive index are not large enough to create a meaningful schlieren image in the air gap between the drop and the reservoir. However, condensation of fresh water over the reservoir solution creates large changes in the concentration of NaCl, giving rise to clear color patterns in the schlieren images. These have been analyzed to obtain salt concentration profiles near the free surface of the reservoir solution as a function of time. The diffusion of fresh water into the reservoir solution at the early stages of crystal growth followed by the mass flux of salt from the bulk solution towards the free surface has been recorded. The overall crystal growth process can be classified into two regimes, as demarcated by the changes in slope of salt concentration within the reservoir. The salt concentration in the reservoir equilibrates at long times when the crystallization process is complete. Thus, transport processes in the reservoir emerge as the route to monitor protein crystal growth in the hanging drop configuration. Results show that crystal growth rate is faster for a higher lysozyme concentration, smaller drops, and larger reservoir heights.

  3. Investigation on the growth of DAST crystals of large surface area for THz applications

    International Nuclear Information System (INIS)

    Vijay, R. Jerald; Melikechi, N.; Thomas, Tina; Gunaseelan, R.; Arockiaraj, M. Antony; Sagayaraj, P.

    2012-01-01

    Graphical abstract: It is evident from the photographs that the crystal tend to grow as a needle (Fig. 1a) in the lower concentration region (2–3 g/200 mL); whereas, in the high concentration region (5 g/200 mL) though there is a marked enlargement in the size of the crystal, the morphology of the resulting DAST crystal is slightly irregular (Fig. 1d) in nature. Among the four concentrations employed, best result was obtained with the DAST–methanol solution of concentration 4 g/200 mL; which resulted in the DAST crystal of large surface area (270 mm 2 ) with high transparency and nearly square shape (Fig. 1c) in a growth period of 20–25 days. Highlights: ► DAST crystals of different sizes are obtained for different concentrations. ► The main focus is to grow DAST crystals with large surface area. ► Structural, optical, thermal and mechanical properties are investigated. - Abstract: The growth of high quality 4-N,N-dimethylamino-4-N-methyl-stilbazoliumtosylate (DAST) crystal with large surface area is reported by adopting the slope nucleation coupled slow evaporation method (SNM-SE). The structure and composition of the crystal are studied by single crystal X-ray diffraction and CHN analyses. The linear optical properties are investigated by UV–vis absorption. The melting point and thermal behavior of DAST are investigated using differential scanning calorimetric (DSC) and thermogravimetric analyses (TGA). The Vickers microhardness number (VHN) and work hardening coefficient of the grown crystal have been determined. The surface features of the DAST crystal are analyzed by scanning electron microscopy (SEM) and it confirmed the presence of narrow line defects (NLDs) in the sample.

  4. Cracking of GaN on sapphire from etch-process-induced nonuniformity in residual thermal stress

    International Nuclear Information System (INIS)

    Lacroix, Yves; Chung, Sung-Hoon; Sakai, Shiro

    2001-01-01

    An experiment was performed to explain the appearance of cracks along mesa structures during the processing of GaN device layers grown on sapphire substrates. Micro-Raman spectroscopy was used to measure the position-dependent stress in the GaN layer. We show evidence that the stress at the interface with the substrate may be larger along the mesa structures than that of the as-grown layer, and that this increase in stress can be enough to induce cracks along mesa structures during processing. We report on the formation of cracks that propagate guided by the nonuniformity of the stress induced by the formation of mesa structures in the GaN layer, independent of crystal direction. The understanding of cracking mechanisms has implications in GaN-based device structures that require heteroepitaxial growth of layers with different lattice size and thermal expansion coefficients. [copyright] 2001 American Institute of Physics

  5. Magnetic Field Applications in Semiconductor Crystal Growth and Metallurgy

    Science.gov (United States)

    Mazuruk, Konstantin; Ramachandran, Narayanan; Grugel, Richard; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    The Traveling Magnetic Field (TMF) technique, recently proposed to control meridional flow in electrically conducting melts, is reviewed. In particular, the natural convection damping capability of this technique has been numerically demonstrated with the implication of significantly improving crystal quality. Advantages of the traveling magnetic field, in comparison to the more mature rotating magnetic field method, are discussed. Finally, results of experiments with mixing metallic alloys in long ampoules using TMF is presented

  6. Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication.

    Science.gov (United States)

    Song, Hyun Jae; Son, Minhyeok; Park, Chibeom; Lim, Hyunseob; Levendorf, Mark P; Tsen, Adam W; Park, Jiwoong; Choi, Hee Cheul

    2012-05-21

    Metal catalyst-free growth of large scale single layer graphene film on a sapphire substrate by a chemical vapor deposition (CVD) process at 950 °C is demonstrated. A top-gated graphene field effect transistor (FET) device is successfully fabricated without any transfer process. The detailed growth process is investigated by the atomic force microscopy (AFM) studies.

  7. New developments on size-dependent growth applied to the crystallization of sucrose

    Science.gov (United States)

    Martins, P. M.; Rocha, F.

    2007-12-01

    The effect of crystal size on the growth rate of sucrose (C 12H 22O 11) at 40 °C is investigated from a theoretical and an experimental point of view. Based on new perspectives resulting from the recently introduced spiral nucleation model [P.M. Martins, F. Rocha, Surf. Sci. 601 (2007) 3400], crystal growth rates are expressed in terms of mass deposition per time and crystal volume units. This alternative definition is demonstrated to be size-independent over the considered supersaturation range. The conventional overall growth rate expressed per surface area units is found to be linearly dependent on crystal size. The advantages of the "volumetric" growth rate concept are discussed. Sucrose dissolution rates were measured under reciprocal conditions of the growth experiments in order to investigate the two-way effect of crystal size on mass transfer rates and on the integration kinetics. Both effects are adequately described by combining a well-established diffusion-integration model and the spiral nucleation mechanism.

  8. Crystal growth, spectral properties, and laser demonstration of laser crystal Nd:LYSO

    Science.gov (United States)

    Li, D. Z.; Xu, X. D.; Zhou, D. H.; Zhuang, S. D.; Wang, Z. P.; Xia, C. T.; Wu, F.; Xu, J.

    2010-11-01

    A Nd:LYSO crystal has been grown by the Czochralski technique. The cell parameters were analyzed with X-ray diffraction (XRD). The Judd-Ofelt intense parameters Ω2,4,6 were obtained to be 2.65, 5.75, and 7.37×10-20 cm2, respectively. The absorption and emission cross sections and the branching ratios were calculated. The large absorption cross section (6.14×10-20 cm2) and broad absorption band (5 nm) around 811 nm indicate that this crystal can be pumped efficiently by laser diodes. The broad emission band from the 4F3/2 multiplet shows that the crystal is a promising medium for ultrashort pulse lasers. Pumped by a laser diode, the maximum 814 mW continuous-wave laser output has been obtained with a slope efficiency of 28.9%. All the results show that this crystal is a promising laser material.

  9. Crystal growth and optical properties of Sm:CaNb2O6 single crystal

    International Nuclear Information System (INIS)

    Di Juqing; Xu Xiaodong; Xia Changtai; Zeng Huidan; Cheng Yan; Li Dongzhen; Zhou Dahua; Wu Feng; Cheng Jimeng; Xu Jun

    2012-01-01

    Highlights: ► Sm:CaNb 2 O 6 single crystal was grown by the Czochralski method. ► Thermal expansion coefficients and J–O parameters were calculated. ► We found that this crystal had high quantum efficiency of 97%. - Abstract: Sm:CaNb 2 O 6 single crystal has been grown by the Czochralski method. Its high-temperature X-ray powder diffraction, optical absorption, emission spectroscopic as well as lifetime have been studied. Thermal expansion coefficients (α), J–O parameters (Ω i ), radiative lifetime (τ rad ), branching ratios (β) and stimulated emission cross-sections (σ e ) were calculated. The quantum efficiency (η) was calculated to be 97%. The intense peak emission cross section at 610, 658 nm were calculated to be 2.40 × 10 −21 , 2.42 × 10 −21 cm 2 . These results indicate that Sm:CaNb 2 O 6 crystal has potential use in visible laser and photonic devices area.

  10. Crystal growth and luminescence properties of Pr-doped LuLiF4 single crystal

    International Nuclear Information System (INIS)

    Sugiyama, Makoto; Yanagida, Takayuki; Yokota, Yuui; Kurosawa, Shunsuke; Fujimoto, Yutaka; Yoshikawa, Akira

    2013-01-01

    0.1, 1, and 3% Pr (with respect to Lu) doped LuLiF 4 (Pr:LuLiF 4 ) single crystals were grown by the micro-pulling-down (μ-PD) method. Transparency of the grown crystals was higher than 70% in the visible wavelength region with some absorption bands due to Pr 3+ 4f-4f transitions. Intense absorption bands related with the Pr 3+ 4f-5d transitions were observed at 190 and 215 nm. In radioluminescence spectra, Pr 3+ 5d-4f emissions were observed at 220, 240, 340, and 405 nm. In the pulse height spectra recorded under 137 Cs γ-ray excitation, the Pr 3% doped sample showed the highest light yield of 2050 photons/MeV and the scintillation decay time of it exhibited 23 and 72 ns also excited by 137 Cs γ-ray. -- Highlights: ► 0.1, 1, and 3% Pr-doped LuLiF 4 single crystals were grown by the μ-PD method. ► Pr 3+ 5d-4f emission peaks appeared at 220, 240, 340, and 405 nm ► The Pr 3%:LuLiF 4 crystal showed the highest light yield of 2050 photons/MeV

  11. Distinct crystallinity and orientations of hydroxyapatite thin films deposited on C- and A-plane sapphire substrates

    Science.gov (United States)

    Akazawa, Housei; Ueno, Yuko

    2014-10-01

    We report how the crystallinity and orientation of hydroxyapatite (HAp) films deposited on sapphire substrates depend on the crystallographic planes. Both solid-phase crystallization of amorphous HAp films and crystallization during sputter deposition at elevated temperatures were examined. The low-temperature epitaxial phase on C-plane sapphire substrates has c-axis orientated HAp crystals regardless of the crystallization route, whereas the preferred orientation switches to the (310) direction at higher temperatures. Only the symmetric stretching mode (ν1) of PO43- units appears in the Raman scattering spectra, confirming well-ordered crystalline domains. In contrast, HAp crystals grown on A-plane sapphire substrates are always oriented toward random orientations. Exhibiting all vibrational modes (ν1, ν3, and ν4) of PO43- units in the Raman scattering spectra reflects random orientation, violating the Raman selection rule. If we assume that Raman intensities of PO43- units represent the crystallinity of HAp films, crystallization terminating the surface with the C-plane is hindered by the presence of excess H2O and OH species in the film, whereas crystallization at random orientations on the A-plane sapphire is rather promoted by these species. Such contrasting behaviors between C-plane and A-plane substrates will reflect surface-plane dependent creation of crystalline seeds and eventually determine the orientation of resulting HAp films.

  12. Growth of methyl 2-(2,4-dinitrophenyl)aminopropanoate single crystals

    Science.gov (United States)

    Perigaud, A.; Nicolau, Y. F.

    1986-12-01

    Methyl 2-(2,4-dinitrophenyl)aminopropanoate single crystals, 1 cm in diameter and 7 cm in length have been grown by a travelling-heater-Bridgman method in polyethylene tubes introduced into glass ampoules, at a growth rate of 1.5-6 mm/day. The starting material was synthesised and purified by recrystallization from methanol and by vacuum evaporation to a purity of 99.994%. The period of growth, and hence the length of the crystal, is limited due to melt decomposition and polycondensation. The b-axis of the crystals is always oriented at about 72° to the ampoule axis. Good quality single crystals have been obtained giving a FWHM of the Cu Kα (040) rocking curve of about 1'.

  13. Contribution to the microwave characterisation of superconductive materials by means of sapphire resonators

    International Nuclear Information System (INIS)

    Hanus, Xavier

    1993-01-01

    The objective of this research thesis is to find a compact resonant structure which would allow the residual surface impedance of superconductive samples to be simply, quickly and economically characterised. The author first explains why he decided to use a sapphire single-crystal as inner dielectric, given some performance reached by resonant structures equipped with such inner dielectrics, and given constraints adopted from the start. He explains the origin of microwave losses which appear in this type of resonant structure, i.e. respectively the surface impedance as far as metallic losses are concerned, and the sapphire dielectric loss angle for as far as dielectric losses are concerned. The experimental installation and the principle of microwave measurements are described. The performance of different possible solutions of resonant structures from starting criteria is presented. The solution of the cavity-sapphire with a TE 011 resonant mode is derived [fr

  14. Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode

    Science.gov (United States)

    Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.

    2018-04-01

    The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

  15. Solubility and peculiarities of the yttrium-aluminium borate crystal growth

    International Nuclear Information System (INIS)

    Azizov, A.V.; Leonyuk, N.I.; Rezvyj, V.R.; Timchenko, T.I.; Belov, N.V.

    1982-01-01

    The nature of crystallization media and crystallization peculiarities of IAl 3 [BO 3 ] 4 yttrium-alluminium borate (YAB) were investigated. The investigation of YAB solubility was conducted in the melts of two different compositions: 88.1K 2 Mo 2 O 10 -3.5V 2 O 3 -8.4B 2 O 3 (1) and 89.5K 2 Mo 3 O 10 - - 10.5B 2 O 3 (2) at 1060-900 deg C. The YAB crystals obtained from different crystallization media had different habit and morphology. The revealed peculiarities are significant for the choice of the YAB crystal growing conditions on orientated seedings: more rapid growth can be exercised along the [0001] face from the solution in the melt (2)

  16. Growth and characterization of 2-Methylimidazolium D-tartrate single crystal

    Science.gov (United States)

    Srinivasan, T. P.; Anandhi, S.; Gopalakrishnan, R.

    2011-03-01

    Single crystal of 2-Methylimidazolium D-tartrate (2MImdT; C8N2O6H12) has been grown by slow evaporation solution growth technique at room temperature using mixed solvents of ethanol and deionized water. Single crystal X-ray diffraction study confirms that 2-Methylimidazolium D-tartrate belongs to monoclinic crystal system with non-centrosymmetric space group P21. The Fourier transform infrared spectrum of 2-Methylimidazolium D-tartrate reveals the presence of methyl and carboxyl functional groups in the compound. The mechanical properties of 2MImdT crystal were studied. The theoretical factor group analysis predicts 168 optical modes in the title compound. The dielectric behavior of 2MImdT crystals was studied at different frequencies and temperatures. Decomposition and melting point of 2MImdT were found using thermal measurements. SHG behavior of the title compound was demonstrated using Q-switched Nd:YAG laser.

  17. Modification of calcite crystal growth by abalone shell proteins: an atomic force microscope study.

    OpenAIRE

    Walters, D A; Smith, B L; Belcher, A M; Paloczi, G T; Stucky, G D; Morse, D E; Hansma, P K

    1997-01-01

    A family of soluble proteins from the shell of Haliotis rufescens was introduced over a growing calcite crystal being scanned in situ by an atomic force microscope (AFM). Atomic step edges on the crystal surface were altered in shape and speed of growth by the proteins. Proteins attached nonuniformly to the surface, indicating different interactions with crystallographically different step edges. The observed changes were consistent with the habit modification induced by this family of protei...

  18. Investigation on the bulk growth of α-LiIO 3 single crystals and the ...

    Indian Academy of Sciences (India)

    2017-07-26

    Jul 26, 2017 ... α-LiIO3 is an excellent optical material exhibiting strong nonlinear optical, ... caused by the strong influence of the growth conditions, and, in particular, pH of the solution from which α-LiIO3 crystal ... studies of the crystals grown at pH 10 reveal the higher optical radiation ... of d31 at 1.06 μm = 4.1 pm V. −1.

  19. Cytostatic versus Cytocidal Activities of Chloroquine Analogues and Inhibition of Hemozoin Crystal Growth

    OpenAIRE

    Gorka, Alexander P.; Alumasa, John N.; Sherlach, Katy S.; Jacobs, Lauren M.; Nickley, Katherine B.; Brower, Jonathan P.; de Dios, Angel C.; Roepe, Paul D.

    2013-01-01

    We report an improved, nonhazardous, high-throughput assay for in vitro quantification of antimalarial drug inhibition of β-hematin (hemozoin) crystallization performed under conditions that are more physiological relative to previous assays. The assay uses the differential detergent solubility of crystalline and noncrystalline forms of heme and is optimized via the use of lipid catalyst. Using this assay, we quantify the effect of pH on the crystal growth-inhibitory activities of current qui...

  20. Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO2 AlN/Sapphire Template

    Directory of Open Access Journals (Sweden)

    Yu-An Chen

    2014-01-01

    Full Text Available GaN epitaxial layers with embedded air voids grown on patterned SiO2 AlN/sapphire templates were proposed. Using interruption-free epitaxial lateral overgrowth technology, we realized uninterrupted growth and controlled the shape of embedded air voids. These layers showed improved crystal quality using X-ray diffraction and measurement of etching pits density. Compared with conventional undoped-GaN film, the full width at half-maximum of the GaN (0 0 2 and (1 0 2 peaks decreased from 485 arcsec to 376 arcsec and from 600 arcsec to 322 arcsec, respectively. Transmission electron microscopy results showed that the coalesced GaN growth led to bending threading dislocation. We also proposed a growth model based on results of scanning electron microscopy.

  1. Use of sapphire as a neutron damage monitor for pressure vessel steels

    International Nuclear Information System (INIS)

    Pells, G.P.; Fudge, A.J.; Murphy, M.J.; Watt, S.

    1989-01-01

    Single crystal α-Al 2 O 3 (sapphire) has been neutron irradiated over a range of dose, dose rate and neutron energy spectra at temperatures from 60 to 310 0 C. Values of optical absorption at 400 nm, the peak of the aluminum vacancy absorption band, were plotted against damage dose expressed in terms of dpa of Al in sapphire obtained from measurements of induced radio-activity in activation foils irradiated with the sapphires and from calculation of the neutron energy spectrum at the irradiation position. The neutron energy spectrum was calculated using modern neutron transport computer codes and adjusted in the light of measurements obtained from multiple foil activation experiments. A simple response curve was obtained for all sapphires irradiated at temperatures between 220 to 310 0 C and for sapphires irradiated below 200 0 C which had been annealed at 290 0 C irrespective of dose rate or neutron beam energy spectrum. The single response curve for irradiations performed in a variety of neutron energy spectra validate the neutron energy spectrum computational procedures

  2. Method for single crystal growth of photovoltaic perovskite material and devices

    Science.gov (United States)

    Huang, Jinsong; Dong, Qingfeng

    2017-11-07

    Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.

  3. The melt growth of large LuAP single crystals for PET scanners

    International Nuclear Information System (INIS)

    Petrosyan, Ashot; Ovanesyan, Karine; Shirinyan, Grigory; Butaeva, Tatyana; Derdzyan, Marina; Pedrini, Christian; Dujardin, Christophe; Garnier, Nicolas; Kamenskikh, Irina

    2005-01-01

    Performance properties of LuAP, a material of highly promising potential for future PET scanners, are presented, as they relate to crystal growth and composition. The light yield measured in 2x2x10 mm 3 elements with 0.4-0.5% Ce and cut from large size crystals (100 mm long and 15 mm in diameter) grown by the Bridgman technique is improved to 40% LSO. The ratio between light yield measured in vertical and horizontal arrangements in the best crystals is near 90%. The role of chemical purity in respect to divalent impurities is studied

  4. Growth of NH4Cl Single Crystal from Vapor Phase in Vertical Furnace

    Science.gov (United States)

    Nigara, Yutaka; Yoshizawa, Masahito; Fujimura, Tadao

    1983-02-01

    A pure and internally stress-free single crystal of NH4Cl was grown successfully from the vapor phase. The crystal measured 1.6 cmφ× 2 cm and had the disordered CsCl structure, which was stable below 184°C. The crystal was grown in an ampoule in a vertical furnace, in which the vapor was efficiently transported both by diffusion and convection. In line with the growth mechanism of a single crystal, the temperature fluctuation (°C/min) on the growth interface was kept smaller than the product of the temperature gradient (°C/cm) and the growth rate (cm/min). The specific heat of the crystal was measured around -31°C (242 K) during cooling and heating cycles by AC calorimetry. The thermal hysteresis (0.4 K) obtained here was smaller than that (0.89 K) of an NH4Cl crystal grown from its aqueous solution with urea added as a habit modifier.

  5. Solution growth of single crystal methylammonium lead halide perovskite nanostructures for optoelectronic and photovoltaic applications.

    Science.gov (United States)

    Fu, Yongping; Meng, Fei; Rowley, Matthew B; Thompson, Blaise J; Shearer, Melinda J; Ma, Dewei; Hamers, Robert J; Wright, John C; Jin, Song

    2015-05-06

    Understanding crystal growth and improving material quality is important for improving semiconductors for electronic, optoelectronic, and photovoltaic applications. Amidst the surging interest in solar cells based on hybrid organic-inorganic lead halide perovskites and the exciting progress in device performance, improved understanding and better control of the crystal growth of these perovskites could further boost their optoelectronic and photovoltaic performance. Here, we report new insights on the crystal growth of the perovskite materials, especially crystalline nanostructures. Specifically, single crystal nanowires, nanorods, and nanoplates of methylammonium lead halide perovskites (CH3NH3PbI3 and CH3NH3PbBr3) are successfully grown via a dissolution-recrystallization pathway in a solution synthesis from lead iodide (or lead acetate) films coated on substrates. These single crystal nanostructures display strong room-temperature photoluminescence and long carrier lifetime. We also report that a solid-liquid interfacial conversion reaction can create a highly crystalline, nanostructured MAPbI3 film with micrometer grain size and high surface coverage that enables photovoltaic devices with a power conversion efficiency of 10.6%. These results suggest that single-crystal perovskite nanostructures provide improved photophysical properties that are important for fundamental studies and future applications in nanoscale optoelectronic and photonic devices.

  6. Impact of interaction range and curvature on crystal growth of particles confined to spherical surfaces

    Science.gov (United States)

    Paquay, Stefan; Both, Gert-Jan; van der Schoot, Paul

    2017-07-01

    When colloidal particles form a crystal phase on a spherical template, their packing is governed by the effective interaction between them and the elastic strain of bending the growing crystal. For example, if growth commences under appropriate conditions, and the isotropic crystal that forms reaches a critical size, growth continues via the incorporation of defects to alleviate elastic strain. Recently, it was experimentally found that, if defect formation is somehow not possible, the crystal instead continues growing in ribbons that protrude from the original crystal. Here we report on computer simulations in which we observe both the formation of ribbons at short interaction ranges and packings that incorporate defects if the interaction is longer-ranged. The ribbons only form above some critical crystal size, below which the nucleus is disk-shaped. We find that the scaling of the critical crystal size differs slightly from the one proposed in the literature, and we argue that this is because the actual morphology transition is caused by the competition between line tension and elastic stress, rather than the competition between chemical potential and elastic stress.

  7. Solution-mediated growth of NBA-ZSM-5 crystals retarded by gel entrapment

    Science.gov (United States)

    Aguilar-Mamani, Wilson; Akhtar, Farid; Hedlund, Jonas; Mouzon, Johanne

    2018-04-01

    The synthesis of flat tablet-shaped ZSM-5 crystals from a gel using metakaolin as aluminosilicate source and n-butyl amine as structure directing agent was investigated. The evolution inside the solid phase was characterized by X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy, thermogravimetry and mass spectrometry. A kinetic study indicated that the nucleation of the majority crystals occurred concurrently with the formation of the gel upon heating the starting liquid suspension. Microstructural evidences undeniably showed that the gel precipitated on ZSM-5 crystals and mineral impurities originating from kaolin. As a result, crystal growth was retarded by gel entrapment, as indicated by the configuration and morphology of the embedded crystals. The results presented herein are harmonized with a solution-mediated nucleation and growth mechanism. Our observations differ from the autocatalytic model that suggests that the nuclei rest inside the gel until released when the gel is consumed. Our results show instead that it is crystals that formed in an early stage before entrapment inside the gel that rest inside the gel until exposed at the gel surface. These results illustrate the limitation of the classical method used in the field to determine nucleation profiles when the crystals become trapped inside the gel.

  8. Growth and characterization of Nd:CLNGG crystal

    Science.gov (United States)

    Shi, Z. B.; Zhang, H. J.; Wang, J. Y.; Yu, Y. G.; Wang, Z. P.; Yu, H. H.; Sun, S. Q.; Xia, H. R.; Jiang, M. H.

    2009-07-01

    The disordered laser crystal neodymium-doped calcium lithium niobium gallium garnet (Nd:CLNGG) was successfully grown by the Czochralski method. Its thermal properties, including the average linear thermal expansion coefficient, thermal diffusion coefficient, specific heat, and thermal conductivity were measured, and continuous-wave (CW) laser performance at 1.06 μm was demonstrated. The maximum power of 1.48 W was achieved with corresponding optical conversion efficiency of 12.4% and slope efficiency of 16.2%.

  9. Crystal nucleation and dendrite growth of metastable phases in undercooled melts

    International Nuclear Information System (INIS)

    Herlach, Dieter

    2011-01-01

    Research highlights: → Homogenous nucleation. → Effects of convection on dendrite growth kinetics. → Description of disorder trapping validated by experiment. - Abstract: An undercooled melt possesses an enhanced free enthalpy that opens up the possibility to crystallize metastable crystalline solids in competition with their stable counterparts. Crystal nucleation selects the crystallographic phase whereas the growth dynamics controls microstructure evolution. We apply containerless processing techniques such as electromagnetic and electrostatic levitation to containerlesss undercool and solidify metallic melts. Owing to the complete avoidance of heterogeneous nucleation on container-walls a large undercooling range becomes accessible with the extra benefit that the freely suspended drop is direct accessible for in situ observation of crystallization far away from equilibrium. Results of investigations of maximum undercoolability on pure zirconium are presented showing the limit of maximum undercoolability set by the onset of homogeneous nucleation. Rapid dendrite growth is measured as a function of undercooling by a high-speed camera and analysed within extended theories of non-equilibrium solidification. In such both supersaturated solid solutions and disordered superlattice structure of intermetallics are formed at high growth velocities. A sharp interface theory of dendrite growth is capable to describe the non-equilibrium solidification phenomena during rapid crystallization of deeply undercooled melts. Eventually, anomalous growth behaviour of Al-rich Al-Ni alloys is presented, which may be caused by forced convection.

  10. Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part 2

    International Nuclear Information System (INIS)

    Greene, J.E.

    1984-01-01

    The understanding of the physics of ion-surface interactions has progressed sufficiently to allow sputter depositinn to be used as a crystal growth technique for depositing a wide variety of single crystal elemental, compound, alloy, and superlattice semiconductors. In many cases, films with essentially bulk values of carrier concentrations and mobilities have been obtained. The controlled use of low energy particle bombardment of the growing film during sputter deposition has been shown to affect all stages of crystal growth ranging from adatom mobilities and nucleation kinetics to elemental incorporation probabilities. Such effects provide inherent advantages for sputter deposition over other vapor phase techniques for the low temperature growth of compound and alloy semiconductors and are essential in allowing the growth of new and unique single crystal metastable semiconductors. Part 1 of this review includes sections on experimental techniques, the physics of ion-surface interactions, and ion bombardment effects on film nucleation and growth, while Part 2 presents a discussion of recent results in the growth of elemental, III-V, II-VI, IV-VI, metastable, and other compound semiconductors

  11. Electromagnetic induction heating for single crystal graphene growth: morphology control by rapid heating and quenching

    Science.gov (United States)

    Wu, Chaoxing; Li, Fushan; Chen, Wei; Veeramalai, Chandrasekar Perumal; Ooi, Poh Choon; Guo, Tailiang

    2015-03-01

    The direct observation of single crystal graphene growth and its shape evolution is of fundamental importance to the understanding of graphene growth physicochemical mechanisms and the achievement of wafer-scale single crystalline graphene. Here we demonstrate the controlled formation of single crystal graphene with varying shapes, and directly observe the shape evolution of single crystal graphene by developing a localized-heating and rapid-quenching chemical vapor deposition (CVD) system based on electromagnetic induction heating. Importantly, rational control of circular, hexagonal, and dendritic single crystalline graphene domains can be readily obtained for the first time by changing the growth condition. Systematic studies suggest that the graphene nucleation only occurs during the initial stage, while the domain density is independent of the growth temperatures due to the surface-limiting effect. In addition, the direct observation of graphene domain shape evolution is employed for the identification of competing growth mechanisms including diffusion-limited, attachment-limited, and detachment-limited processes. Our study not only provides a novel method for morphology-controlled graphene synthesis, but also offers fundamental insights into the kinetics of single crystal graphene growth.

  12. Growth, crystal structure, spectral properties and laser performance of Yb3+:NaLu(MoO4)2 crystal

    International Nuclear Information System (INIS)

    Yu, Yi; Zhang, Lizhen; Huang, Yisheng; Lin, Zhoubin; Wang, Guofu

    2013-01-01

    A double molybdate Yb 3+ :NaLu(MoO 4 ) 2 crystal was successfully grown from a flux of Na 2 Mo 2 O 7 by the top-seeded solution growth method, for the first time to our knowledge. The crystal belongs to the tetragonal system with space group I4 1 /a, and the unit-cell parameters are a = b = 5.159 Å, c = 11.246 Å. Na and Lu atoms co-occupy the same lattice site, which leads to the disordered structure of NaLu(MoO 4 ) 2 crystal. The thermal expansion coefficients of the crystal are 1.35 × 10 −5 K −1 along the c-axis, and 1.01 × 10 −5 K −1 along the a-axis. The full-width at half-maximum of the emission bands are 67 nm for the σ-polarization and 50 nm for the π-polarization at about 1020 nm. The maximum emission cross-sections for the σ- and π-polarizations are 2.79 × 10 −20 cm 2 and 2.94 × 10 −20 cm 2 , respectively. 0.3 W output power at 1025 nm was obtained at an absorbed pump power of 1.7 W, with a slope efficiency of 24%. (paper)

  13. Growth, crystal structure, spectral properties and laser performance of Yb3+:NaLu(MoO4)2 crystal

    Science.gov (United States)

    Yu, Yi; Zhang, Lizhen; Huang, Yisheng; Lin, Zhoubin; Wang, Guofu

    2013-10-01

    A double molybdate Yb3+:NaLu(MoO4)2 crystal was successfully grown from a flux of Na2Mo2O7 by the top-seeded solution growth method, for the first time to our knowledge. The crystal belongs to the tetragonal system with space group I41/a, and the unit-cell parameters are a = b = 5.159 Å, c = 11.246 Å. Na and Lu atoms co-occupy the same lattice site, which leads to the disordered structure of NaLu(MoO4)2 crystal. The thermal expansion coefficients of the crystal are 1.35 × 10-5 K-1 along the c-axis, and 1.01 × 10-5 K-1 along the a-axis. The full-width at half-maximum of the emission bands are 67 nm for the σ-polarization and 50 nm for the π-polarization at about 1020 nm. The maximum emission cross-sections for the σ- and π-polarizations are 2.79 × 10-20 cm2 and 2.94 × 10-20 cm2, respectively. 0.3 W output power at 1025 nm was obtained at an absorbed pump power of 1.7 W, with a slope efficiency of 24%.

  14. In Situ Determination of Thermal Profiles during Czochralski Silicon Crystal Growth by an Eddy Current Technique.

    Science.gov (United States)

    Choe, Kwang Su.

    An eddy current testing method was developed to continuously monitor crystal growth process and determine thermal profiles in situ during Czochralski silicon crystal growth. The work was motivated by the need to improve the quality of the crystal by controlling thermal gradients and annealing history over the growth cycle. The experimental concept is to monitor intrinsic electrical conductivities of the growing crystal and deduce temperature values from them. The experiments were performed in a resistance-heated Czochralski puller with a 203 mm (8 inch) diameter crucible containing 6.5 kg melt. The silicon crystals being grown were about 80 mm in diameter and monitored by an encircling sensor operating at three different test frequencies (86, 53 and 19 kHz). A one-dimensional analytical solution was employed to translate the detected signals into electrical conductivities. In terms of experiments, the effects of changes in growth condition, which is defined by crystal and crucible rotation rates, crucible position, pull rate, and hot-zone configuration, were investigated. Under a given steady-state condition, the thermal profile was usually stable over the entire length of crystal growth. The profile shifted significantly, however, when the crucible rotation rate was kept too high. As a direct evidence to the effects of melt flow on heat transfer process, a thermal gradient minimum was observed about the crystal/crucible rotation combination of 20/-10 rpm cw. The thermal gradient reduction was still most pronounced when the pull rate or the radiant heat loss to the environment was decreased: a nearly flat axial thermal gradient was achieved when either the pull rate was halved or the height of the exposed crucible wall was effectively doubled. Under these conditions, the average axial thermal gradient along the surface of the crystal was about 4-5 ^{rm o}C/mm. Regardless of growth condition, the three-frequency data revealed radial thermal gradients much larger

  15. Strategies for the coupling of global and local crystal growth models

    Science.gov (United States)

    Derby, Jeffrey J.; Lun, Lisa; Yeckel, Andrew

    2007-05-01

    The modular coupling of existing numerical codes to model crystal growth processes will provide for maximum effectiveness, capability, and flexibility. However, significant challenges are posed to make these coupled models mathematically self-consistent and algorithmically robust. This paper presents sample results from a coupling of the CrysVUn code, used here to compute furnace-scale heat transfer, and Cats2D, used to calculate melt fluid dynamics and phase-change phenomena, to form a global model for a Bridgman crystal growth system. However, the strategy used to implement the CrysVUn-Cats2D coupling is unreliable and inefficient. The implementation of under-relaxation within a block Gauss-Seidel iteration is shown to be ineffective for improving the coupling performance in a model one-dimensional problem representative of a melt crystal growth model. Ideas to overcome current convergence limitations using approximations to a full Newton iteration method are discussed.

  16. Development of low-cost silicon crystal growth techniques for terrestrial photovoltaic solar energy conversion

    Science.gov (United States)

    Zoutendyk, J. A.

    1976-01-01

    Because of the growing need for new sources of electrical energy, photovoltaic solar energy conversion is being developed. Photovoltaic devices are now being produced mainly from silicon wafers obtained from the slicing and polishing of cylindrically shaped single crystal ingots. Inherently high-cost processes now being used must either be eliminated or modified to provide low-cost crystalline silicon. Basic to this pursuit is the development of new or modified methods of crystal growth and, if necessary, crystal cutting. If silicon could be grown in a form requiring no cutting, a significant cost saving would potentially be realized. Therefore, several techniques for growth in the form of ribbons or sheets are being explored. In addition, novel techniques for low-cost ingot growth and cutting are under investigation.

  17. Crystal growth kinetics in undercooled melts of pure Ge, Si and Ge-Si alloys

    Science.gov (United States)

    Herlach, Dieter M.; Simons, Daniel; Pichon, Pierre-Yves

    2018-01-01

    We report on measurements of crystal growth dynamics in semiconducting pure Ge and pure Si melts and in Ge100-xSix (x = 25, 50, 75) alloy melts as a function of undercooling. Electromagnetic levitation techniques are applied to undercool the samples in a containerless way. The growth velocity is measured by the utilization of a high-speed camera technique over an extended range of undercooling. Solidified samples are examined with respect to their microstructure by scanning electron microscopic investigations. We analyse the experimental results of crystal growth kinetics as a function of undercooling within the sharp interface theory developed by Peter Galenko. Transitions of the atomic attachment kinetics are found at large undercoolings, from faceted growth to dendrite growth. This article is part of the theme issue `From atomistic interfaces to dendritic patterns'.

  18. Analysis of Study Trend of Growth and Characterization of CdZnTe Single Crystal

    International Nuclear Information System (INIS)

    Lee, Kyu Hong; Ha, Jang Ho; Kim, Han Soo

    2011-05-01

    CdZnTe (CZT) alloys are very important semiconducting compounds due to their use in several strategic applications in medical, space, and security devices, especially, radiation detector. Specific problems of the bulk crystal growth are still to be solved. However, since industries require excellent bulk CZT crystals, a strong effort is being organized worldwide to optimize the growth process and obtain better material. This report presents the study trend of the bulk CZT crystal growth and characteristics. After the first section where the problems connected to the complicated phase diagram of CZT are presented, the second section describes the various general physical and chemical properties, together with the compensation problems of the CZT material. In the third section, various growth methods are described, paying attention to the defects generated in the different cases. Further, the annealing process which is an essential step for improving the crystal quality is described. In the last section, the general material characterization methods are presented, as a scientific approach for assessing the quality of the bulk crystal

  19. Ultrasound Flow Mapping for the Investigation of Crystal Growth.

    Science.gov (United States)

    Thieme, Norman; Bonisch, Paul; Meier, Dagmar; Nauber, Richard; Buttner, Lars; Dadzis, Kaspars; Patzold, Olf; Sylla, Lamine; Czarske, Jurgen

    2017-04-01

    A high energy conversion and cost efficiency are keys for the transition to renewable energy sources, e.g., solar cells. The efficiency of multicrystalline solar cells can be improved by enhancing the understanding of its crystallization process, especially the directional solidification. In this paper, a novel measurement system for the characterization of flow phenomena and solidification processes in low-temperature model experiments on the basis of ultrasound (US) Doppler velocimetry is described. It captures turbulent flow phenomena in two planes with a frame rate of 3.5 Hz and tracks the shape of the solid-liquid interface during multihour experiments. Time-resolved flow mapping is performed using four linear US arrays with a total of 168 transducer elements. Long duration measurements are enabled through an online, field-programmable gate array (FPGA)-based signal processing. Nine single US transducers allow for in situ tracking of a solid-liquid interface. Results of flow and solidification experiments in the model experiment are presented and compared with numerical simulation. The potential of the developed US system for measuring turbulent flows and for tracking the solidification front during a directional crystallization process is demonstrated. The results of the model experiments are in good agreement with numerical calculations and can be used for the validation of numerical models, especially the selection of the turbulence model.

  20. Control of heat transfer in continuous-feeding Czochralski-silicon crystal growth with a water-cooled jacket

    Science.gov (United States)

    Zhao, Wenhan; Liu, Lijun

    2017-01-01

    The continuous-feeding Czochralski method is an effective method to reduce the cost of single crystal silicon. By promoting the crystal growth rate, the cost can be reduced further. However, more latent heat will be released at the melt-crystal interface under a high crystal growth rate. In this study, a water-cooled jacket was applied to enhance the heat transfer at the melt-crystal interface. Quasi-steady-state numerical calculation was employed to investigate the impact of the water-cooled jacket on the heat transfer at the melt-crystal interface. Latent heat released during the crystal growth process at the melt-crystal interface and absorbed during feedstock melting at the feeding zone was modeled in the simulations. The results show that, by using the water-cooled jacket, heat transfer in the growing crystal is enhanced significantly. Melt-crystal interface deflection and thermal stress increase simultaneously due to the increase of radial temperature at the melt-crystal interface. With a modified heat shield design, heat transfer at the melt-crystal interface is well controlled. The crystal growth rate can be increased by 20%.

  1. Growth of 4-(dimethylamino) benzaldehyde doped triglycine sulphate single crystals and its characterization

    International Nuclear Information System (INIS)

    Rai, Chitharanjan; Sreenivas, K.; Dharmaprakash, S.M.

    2009-01-01

    Single crystals of triglycine sulphate (TGS) doped with 1 mol% of 4-(dimethylamino) benzaldehyde (DB) have been grown from aqueous solution at ambient temperature by slow evaporation technique. The effect of dopant on the crystal growth and dielectric, pyroelectric and mechanical properties of TGS crystal have been investigated. X-ray powder diffraction pattern for pure and doped TGS was collected to determine the lattice parameters. FTIR spectra were employed to confirm the presence of 4-(dimethylamino) benzaldehyde in TGS crystal, qualitatively. The dielectric permittivity has been studied as a function of temperature by cooling the sample at a rate of 1 deg. C/min. An increase in the Curie temperature T c =51 deg. C (for pure TGS, T c =48.5 deg. C) and decrease in maximum permittivity has been observed for doped TGS when compared to pure TGS crystal. Pyroelectric studies on doped TGS were carried out to determine pyroelectric coefficient. The Vickers's hardness of the doped TGS crystals along (0 1 0) face is higher than that of pure TGS crystal for the same face. Domain patterns on b-cut plates were observed using scanning electron microscope. The low dielectric constant, higher pyroelectric coefficient and higher value of hardness suggest that doped TGS crystals could be a potential material for IR detectors.

  2. Growth of 4-(dimethylamino) benzaldehyde doped triglycine sulphate single crystals and its characterization

    Energy Technology Data Exchange (ETDEWEB)

    Rai, Chitharanjan, E-mail: raichitharanjan@gmail.co [Department of Physics, Mangalore University, Mangalagangotri 574 199 (India); Kalpataru First Grade Science College, Tiptur 572 202 (India); Sreenivas, K. [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Dharmaprakash, S.M., E-mail: smdharma@yahoo.co [Department of Physics, Mangalore University, Mangalagangotri 574 199 (India)

    2009-11-15

    Single crystals of triglycine sulphate (TGS) doped with 1 mol% of 4-(dimethylamino) benzaldehyde (DB) have been grown from aqueous solution at ambient temperature by slow evaporation technique. The effect of dopant on the crystal growth and dielectric, pyroelectric and mechanical properties of TGS crystal have been investigated. X-ray powder diffraction pattern for pure and doped TGS was collected to determine the lattice parameters. FTIR spectra were employed to confirm the presence of 4-(dimethylamino) benzaldehyde in TGS crystal, qualitatively. The dielectric permittivity has been studied as a function of temperature by cooling the sample at a rate of 1 deg. C/min. An increase in the Curie temperature T{sub c}=51 deg. C (for pure TGS, T{sub c}=48.5 deg. C) and decrease in maximum permittivity has been observed for doped TGS when compared to pure TGS crystal. Pyroelectric studies on doped TGS were carried out to determine pyroelectric coefficient. The Vickers's hardness of the doped TGS crystals along (0 1 0) face is higher than that of pure TGS crystal for the same face. Domain patterns on b-cut plates were observed using scanning electron microscope. The low dielectric constant, higher pyroelectric coefficient and higher value of hardness suggest that doped TGS crystals could be a potential material for IR detectors.

  3. Growth of 4-(dimethylamino) benzaldehyde doped triglycine sulphate single crystals and its characterization

    Science.gov (United States)

    Rai, Chitharanjan; Sreenivas, K.; Dharmaprakash, S. M.

    2009-11-01

    Single crystals of triglycine sulphate (TGS) doped with 1 mol% of 4-(dimethylamino) benzaldehyde (DB) have been grown from aqueous solution at ambient temperature by slow evaporation technique. The effect of dopant on the crystal growth and dielectric, pyroelectric and mechanical properties of TGS crystal have been investigated. X-ray powder diffraction pattern for pure and doped TGS was collected to determine the lattice parameters. FTIR spectra were employed to confirm the presence of 4-(dimethylamino) benzaldehyde in TGS crystal, qualitatively. The dielectric permittivity has been studied as a function of temperature by cooling the sample at a rate of 1 °C/min. An increase in the Curie temperature Tc=51 °C (for pure TGS, Tc=48.5 °C) and decrease in maximum permittivity has been observed for doped TGS when compared to pure TGS crystal. Pyroelectric studies on doped TGS were carried out to determine pyroelectric coefficient. The Vickers's hardness of the doped TGS crystals along (0 1 0) face is higher than that of pure TGS crystal for the same face. Domain patterns on b-cut plates were observed using scanning electron microscope. The low dielectric constant, higher pyroelectric coefficient and higher value of hardness suggest that doped TGS crystals could be a potential material for IR detectors.

  4. Growth and characterization of air annealing Mn-doped YAG:Ce single crystal for LED

    International Nuclear Information System (INIS)

    Xiang, Weidong; Zhong, Jiasong; Zhao, Yinsheng; Zhao, Binyu; Liang, Xiaojuan; Dong, Yongjun; Zhang, Zhimin; Chen, Zhaoping; Liu, Bingfeng

    2012-01-01

    Highlights: ► The YAG:Ce,Mn single crystal was well synthesized by the Czochralski (CZ) method. ► The emission intensity of the sample has been influenced after annealing. ► Annealed in the air at 1200 °C was the most optimal annealing condition. ► The single crystal could be used in the white light LED which emitted by blue light. - Abstract: The growth of Mn-doped YAG:Ce (yttrium aluminum garnet doped cerium) single crystal by the Czochralski (CZ) method and the characterization of its spectroscopy and color-electric parameters are presented. The absorption spectra indicate that the crystal absorbed highly in the 300–500 nm wavelength range. The emission spectrum of the crystal consists of a peak around 538 nm when excited by 460 nm blue light, which prove the YAG:Ce,Mn single crystal could be used in the white light emitting doides (LED). The different charges of Mn ions have different luminescence properties, and the air annealing process for the single crystal would change the concentration of Mn ions with different charges, which could influence the emission intensity of the single crystal.

  5. Direct growth of self-crystallized graphene and graphite nanoballs with Ni vapor-assisted growth: From controllable growth to material characterization

    Science.gov (United States)

    Yen, Wen-Chun; Chen, Yu-Ze; Yeh, Chao-Hui; He, Jr-Hau; Chiu, Po-Wen; Chueh, Yu-Lun

    2014-01-01

    A directly self-crystallized graphene layer with transfer-free process on arbitrary insulator by Ni vapor-assisted growth at growth temperatures between 950 to 1100°C via conventional chemical vapor deposition (CVD) system was developed and demonstrated. Domain sizes of graphene were confirmed by Raman spectra from ~12 nm at growth temperature of 1000°C to ~32 nm at growth temperature of 1100°C, respectively. Furthermore, the thickness of the graphene is controllable, depending on deposition time and growth temperature. By increasing growth pressure, the growth of graphite nano-balls was preferred rather than graphene growth. The detailed formation mechanisms of graphene and graphite nanoballs were proposed and investigated in detail. Optical and electrical properties of graphene layer were measured. The direct growth of the carbon-based materials with free of the transfer process provides a promising application at nanoelectronics. PMID:24810224

  6. Direct growth of self-crystallized graphene and graphite nanoballs with Ni vapor-assisted growth: from controllable growth to material characterization.

    Science.gov (United States)

    Yen, Wen-Chun; Chen, Yu-Ze; Yeh, Chao-Hui; He, Jr-Hau; Chiu, Po-Wen; Chueh, Yu-Lun

    2014-05-09

    A directly self-crystallized graphene layer with transfer-free process on arbitrary insulator by Ni vapor-assisted growth at growth temperatures between 950 to 1100 °C via conventional chemical vapor deposition (CVD) system was developed and demonstrated. Domain sizes of graphene were confirmed by Raman spectra from ~12 nm at growth temperature of 1000 °C to ~32 nm at growth temperature of 1100 °C, respectively. Furthermore, the thickness of the graphene is controllable, depending on deposition time and growth temperature. By increasing growth pressure, the growth of graphite nano-balls was preferred rather than graphene growth. The detailed formation mechanisms of graphene and graphite nanoballs were proposed and investigated in detail. Optical and electrical properties of graphene layer were measured. The direct growth of the carbon-based materials with free of the transfer process provides a promising application at nanoelectronics.

  7. In-line bulk supersaturation measurement by electrical conductometry in KDP crystal growth from aqueous solution

    Science.gov (United States)

    Bordui, P. F.; Loiacono, G. M.

    1984-07-01

    A method is presented for in-line bulk supersaturation measurement in crystal growth from aqueous solution. The method is based on a computer-controlled concentration measurement exploiting an experimentally predetermined cross-correlation between the concentration, electrical conductivity, and temperature of the growth solution. The method was applied to Holden crystallization of potassium dihydrogen phosphate (KDP). An extensive conductivity-temperature-concentration data base was generated for this system over a temperature range of 31 to 41°C. The method yielded continous, automated bulk supersaturation output accurate to within ±0.05 g KDP100 g water (±0.15% relative supersaturation).

  8. Growth of ruby crystals by the heat exchanger method, phase 1: NSF small business innovation research

    Science.gov (United States)

    Schmid, F.; Khattak, C. P.

    1980-03-01

    Conditions for the growth of large, uniformly doped laser crystals by the heat exchanger method are explored. Determination of the melt point, selection of crucible material and establishment of furnace operating parameters are discussed. The melt point of ruby was found to be 2040 plus or minus 10 C. Molybdenum crucibles can be used to contain ruby in vacuum as well as under argon atmospheres at desired superheat temperatures over extended periods required for crystal growth. Thermodynamic analysis was conducted and vapor pressures of volatile species calculated. Experimentally, volatilization of chromium oxides was suppressed by using welded covers on crucibles and operating under an argon pressure in the furnace.

  9. Dual Effect of the Cubic Ag₃PO₄ Crystal on Pseudomonas syringae Growth and Plant Immunity

    Directory of Open Access Journals (Sweden)

    Mi Kyung Kim

    2016-04-01

    Full Text Available We previously found that the antibacterial activity of silver phosphate crystals on Escherichia coli depends on their structure. We here show that the cubic form of silver phosphate crystal (SPC can also be applied to inhibit the growth of a plant-pathogenic Pseudomonas syringae bacterium. SPC pretreatment resulted in reduced in planta multiplication of P. syringae. Induced expression of a plant defense marker gene PR1 by SPC alone is suggestive of its additional plant immunity-stimulating activity. Since SPC can simultaneously inhibit P. syringae growth and induce plant defense responses, it might be used as a more effective plant disease-controlling agent.

  10. (Li1−xFexOHFeSe Superconductors: Crystal Growth, Structure, and Electromagnetic Properties

    Directory of Open Access Journals (Sweden)

    Guo-Yong Zhang

    2017-06-01

    Full Text Available This review focuses on the growth of high-quality (Li1−xFexOHFeSe single crystals by a hydrothermal method using floating-zone-grown AxFe2−ySe2 (A = K, Rb, and Cs as precursors. The structure, superconductivity, and magnetic behavior of the obtained crystals are highly influenced by the growth conditions, such as time, temperature, and composition. A phase diagram with temperature against the c-lattice constant is summarized including the antiferromagnetic spin density wave, superconducting, and paramagnetic phases.

  11. Synthesis and growth of single crystals of PrCl3

    International Nuclear Information System (INIS)

    Pei, Jen Shieh.

    1984-01-01

    An efficient method for growth of high optical quality single crystals of PrCl 3 . The method consists in careful drying of the hydrated chloride, PrCl 3 . 7H 2 O, with a protective atmosphere of anhydrous HCl and Ar. A subsequent growth was done by the zone melting technique. The hydrated chloride had prepared from dissolution of the oxide Pr 6 O 11 in hydrochloric acid. The grown crystals had characterized fluorescence and x-ray diffraction measurements. (Author) [pt

  12. Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

    Science.gov (United States)

    Yang, Xu; Nitta, Shugo; Pristovsek, Markus; Liu, Yuhuai; Nagamatsu, Kentaro; Kushimoto, Maki; Honda, Yoshio; Amano, Hiroshi

    2018-05-01

    Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.

  13. Semipolar GaN grown on m-plane sapphire using MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Wernicke, Tim; Netzel, Carsten; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Institute of Solid State Physics, Technical University of Berlin (Germany)

    2008-07-01

    We have investigated the MOVPE growth of semipolar gallium nitride (GaN) films on (10 anti 1 0) m-plane sapphire substrates. Specular GaN films with a RMS roughness (10 x 10 {mu}m{sup 2}) of 15.2 nm were obtained and an arrowhead like structure aligned along[ anti 2 113] is prevailing. The orientation relationship was determined by XRD and yielded (212){sub GaN} parallel (10 anti 10){sub sapphire} and [anti 2113]{sub GaN} parallel [0001]{sub sapphire} as well as [anti 2113]{sub GaN} parallel [000 anti 1]{sub sapphire}. PL spectra exhibited near band edge emission accompanied by a strong basal plane stacking fault emission. In addition lower energy peaks attributed to prismatic plane stacking faults and donor acceptor pair emission appeared in the spectrum. With similar growth conditions also (1013) GaN films on m-plane sapphire were obtained. In the later case we found that the layer was twinned, crystallites with different c-axis orientation were present. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Crystal growth and characterization of Ir-Te compounds

    Energy Technology Data Exchange (ETDEWEB)

    Kurzhals, Philipp; Weber, Frank; Zocco, Diego; Adelmann, Peter; Merz, Michael; Wolf, Thomas; Kuntz, Sebastian; Grube, Kai [Karlsruhe Institute of Technology, Institute for Solid State Physics, Karlsruhe (Germany)

    2016-07-01

    IrTe{sub 2} is distinguished by a structural phase transition whose origin is not understood up to the present day. We grew crystals using the self-flux method starting from the reagents iridium and tellurium and got specimen with varying amounts of IrTe{sub 2} and Ir{sub 3}Te{sub 8}, analyzed by x-ray powder diffraction. We studied the transition near T = 280 K in magnetization measurements down to T = 1.8 K probing also for superconductivity, which was reported for intercalated samples. Results indicate that the structural transition happens over an extended range in temperature and superconductivity is absent in our samples. Ir{sub 3}Te{sub 8} is not studied to such an extent as IrTe{sub 2}. In previous publications a structural phase transition is reported. We characterized the transition by performing magnetization measurements and X-ray diffraction.

  15. New Crystal-Growth Methods for Producing Lattice-Matched Substrates for High-Temperature Superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Boatner, L.A.

    2008-06-24

    This effort addressed the technical problem of identifying and growing, on a commercial scale, suitable single-crystal substrates for the subsequent deposition of epitaxial thin films of high temperature semiconductors such as GaN/AlN. The lack of suitable lattice-matched substrate materials was one of the major problem areas in the development of semiconducting devices for use at elevated temperatures as well as practical opto-electronic devices based on Al- and GaN technology. Such lattice-matched substrates are necessary in order to reduce or eliminate high concentrations of defects and dislocations in GaN/AlN and related epitaxial thin films. This effort concentrated, in particular, on the growth of single crystals of ZnO for substrate applications and it built on previous ORNL experience in the chemical vapor transport growth of large single crystals of zinc oxide. This combined expertise in the substrate growth area was further complemented by the ability of G. Eres and his collaborators to deposit thin films of GaN on the subject substrates and the overall ORNL capability for characterizing the quality of such films. The research effort consisted of research on the growth of two candidate substrate materials in conjunction with concurrent research on the growth and characterization of GaN films, i.e. the effort combined bulk crystal growth capabilities in the area of substrate production at both ORNL and the industrial partner, Commercial Crystal Growth Laboratories (CCL), Naples, Florida, with the novel thin-film deposition techniques previously developed in the ORNL SSD.

  16. Mechanism of abnormally slow crystal growth of CuZr alloy

    International Nuclear Information System (INIS)

    Yan, X. Q.; Lü, Y. J.

    2015-01-01

    Crystal growth of the glass-forming CuZr alloy is shown to be abnormally slow, which suggests a new method to identify the good glass-forming alloys. The crystal growth of elemental Cu, Pd and binary NiAl, CuZr alloys is systematically studied with the aid of molecular dynamics simulations. The temperature dependence of the growth velocity indicates the different growth mechanisms between the elemental and the alloy systems. The high-speed growth featuring the elemental metals is dominated by the non-activated collision between liquid-like atoms and interface, and the low-speed growth for NiAl and CuZr is determined by the diffusion across the interface. We find that, in contrast to Cu, Pd, and NiAl, a strong stress layering arisen from the density and the local order layering forms in front of the liquid-crystal interface of CuZr alloy, which causes a slow diffusion zone. The formation of the slow diffusion zone suppresses the interface moving, resulting in much small growth velocity of CuZr alloy. We provide a direct evidence of this explanation by applying the compressive stress normal to the interface. The compression is shown to boost the stress layering in CuZr significantly, correspondingly enhancing the slow diffusion zone, and eventually slowing down the crystal growth of CuZr alloy immediately. In contrast, the growth of Cu, Pd, and NiAl is increased by the compression because the low diffusion zones in them are never well developed

  17. Growth and characterization of calcium hydrogen phosphate dihydrate crystals from single diffusion gel technique

    Energy Technology Data Exchange (ETDEWEB)

    Rajendran, K.; Dale Keefe, C. [Department of Chemistry, Cape Breton University, Sydney, Nova Scotia (Canada)

    2010-09-15

    Calcium hydrogen phosphate dihydrate (CaHPO{sub 4}.2H{sub 2}O, CHPD) a dissolved mineral in urine is known to cause renal or bladder stones in both human and animals. Growth of CHPD or brushite using sodium metasilicate gel techniques followed by light and polarizing microscopic studies revealed its structural and morphological details. Crystal identity by powder x-ray diffraction confirmed the FT-IR and FT-Raman spectroscopic techniques as alternate methods for fast analysis of brushite crystals which could form as one type of renal stones. P-O-P asymmetric stretchings in both FT-IR (987.2, 874.1 and 792 cm{sup -1}) and FT-Raman (986.3 cm{sup -1}, 1057.6 cm{sup -1} and 875.2 cm{sup -1}) were found as characteristics of brushite crystals. Differential Scanning Calorimetry (DSC) analysis revealed brushite crystallization purity using gel method by studying their endothermic peaks. This study incorporated a multidisciplinary approach in characterizing CHPD crystals grown in vitro to help formulate prevention or dissolution strategy in controlling urinary stone growth. Initial studies with 0.2 M citric acid ions as controlling agent in the nucleation of brushite crystals further support the presented approach. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Rapid growth of ZnO hexagonal prism crystals by direct microwave heating

    Institute of Scientific and Technical Information of China (English)

    ZHU Zhenqi; ZHOU Jian; LIU Guizhen; REN Zhiguo

    2008-01-01

    ZnO hexagonal prism crystals were synthesized from ZnO powders by microwave heating in a short time (within 20 min) without any metal catalyst or transport agent.Zinc oxide raw materials were made by evaporating from the high-temperature zone in an enclosure atmosphere and crystals were grown on the self-source substrate.The inherent asymmetry in microwave heating provides the temperature gradient for crystal growth.Substrate and temperature distribution in the oven show significant effects on the growth of the ZnO crystal.The morphologies demonstrate that these samples are pure hexagonal prism crystals with maximum 80 μm in diameter and 600 μm in length,which possess a well faceted end and side surface.X-ray diffraction (XRD) reveals that these samples are pure crystals.The photoluminescence (PL) exhibits strong ultraviolet emission at room temperature,indicating potential applications for short-wave light-emitting photonic devices.

  19. Microdefects revealed by X-ray diffusion scattering in Czochralski-growth dislocation-free silicon single crystals

    International Nuclear Information System (INIS)

    Bublik, B.T.; Zotov, N.M.

    1997-01-01

    Microdefects in the regions of Si crystals having different thermal history defined by growth conditions was studied by the X-ray diffuse scattering method on a triple crystal X-ray diffractometer. It was shown that in such crystals the microdefects with positive strength are prevalent. However, between the above indicated regions the defects with the strength of opposite sign prevail

  20. Crystal growth and mechanical hardness of In{sub 2}Se{sub 2.7}Sb{sub 0.3} single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Patel, Piyush, E-mail: piyush-patel130@yahoo.com; Vyas, S. M., E-mail: s-m-vyas-gu@hotmail.com; Patel, Vimal; Pavagadhi, Himanshu [Department of Physics, School of Science, Gujarat University, Ahmedabad, Gujarat, India-380009 (India); Solanki, Mitesh [panditdindayal Petroleum University, Gandhinagar. Gujarat (India); Jani, Maunik P. [BITS Edu Campus, Varnama, Vadodara, Gujarat (India)

    2015-08-28

    The III-VI compound semiconductors is important for the fabrication of ionizing radiation detectors, solid-state electrodes, and photosensitive heterostructures, solar cell and ionic batteries. In this paper, In{sub 2}Se{sub 2.7} Sb{sub 0.3} single crystals were grown by the Bridgman method with temperature gradient of 60 °C/cm and the growth velocity 0.5cm/hr. The as-grown crystals were examined under the optical microscope for surface study, a various growth features observed on top free surface of the single crystal which is predominant of layers growth mechanism. The lattice parameters of as-grown crystal was determined by the XRD analysis. A Vickers’ projection microscope were used for the study of microhardness on the as-cleaved, cold-worked and annealed samples of the crystals, the results were discussed, and reported in detail.

  1. Single-crystal growth of Group IVB and VB carbides by the floating-zone method

    International Nuclear Information System (INIS)

    Finch, C.B.; Chang, Y.K.; Abraham, M.M.

    1989-02-01

    The floating-zone method for the growth of Group IVB and VB carbides is described and reviewed. We have systematically investigated the technique and confirmed the growth of large single crystals of TiC/sub 0.95/, ZrC/sub 0.93/, ZrC/sub 0.98/, VC/sub 0.80/, NbC/sub 0.95/, TaC/sub 0.89/. Optimal growth conditions were in the 0.5-2.0 cm/h range under 8-12 atm helium. Good crystal growth results were achieved with hot-pressed starting rods of 90-95% density, using a ''double pancake'' induction coil and a 200-kHz/100- kW rf power supply. 36 refs., 5 figs., 3 tabs

  2. Investigation of the growth defects in strontium titanate single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kulagin, N A; Landar, S V; Podus, L P [Khar' kovskij Gosudarstvennyj Univ. (Ukrainian SSR)

    1981-02-01

    Investigation results of characteristics and reasons for formation of macroscopic growth defects in SrTiO/sub 3/ monocrystals grown up by Wernail method are presented. It is shown that blue colour occurring in the specimen volume is caused by shortage of oxygen during growing which results in transition of some ions from tetravalent to trivalent state. The defect of another type is characterized by increased content of Fe and Ni oxides.

  3. Scientific/Technical Report: Improvement in compensation and crystal growth of cadmium zinc telluride radiation detectors

    International Nuclear Information System (INIS)

    Kelvin G. Lynn; Kelly A. Jones

    2007-01-01

    Comparison of actual accomplishments with goals and objectives: (1) Growth of 12 ingots--Washington State University (WSU) more than met this goal for the project by growing 12 final ingots for the year. Nine of the twelve crystal growth ingots resolved gamma radiation at room temperature. The other three ingots where resistivity of ∼ 3 x 10 8 Ohm*cm for CG32a, CG36, and CG42 lower than expected, however none of these were tried with blocking contacts. All ingots were evaluated from tip to heel. In these three cases, the group III, dopant Aluminum (Al) was not detected to a level to compensate the Cd vacancies in the cadmium zinc telluride (CZT) thus the ingots were lower resistivity. The nine ingots that were successful radiation detectors averaged a bulk resistivity of 1.25 x 10 10 Ohm*cm and with a average μτ product for electrons of ∼ 2 x 10 -4 cm 2 /V with a 1/4 microsecond shaping time with samples ∼2 mm in thickness. (2) Attempt new compensations techniques--WSU also met this goal. Several doping schemes were attempted and investigated with various amounts of excess Tellurium added to the growth. The combination of Al and Erbium (Er) were first attempted for these ingots and subsequently CG34 was grown with Al, Er and Holmium. These compensation techniques produced radiation detectors and are currently under investigation. These growths were made with significant different doping levels to determine the affect of the dopants. CG43 was doped with Indium and Er. Indium was introduced instead of Al to determine if Indium is more soluble than Al for CZT and was less oxidized. This may decrease the amount of low resistivity ingots grown by doping with Indium instead of Al. (3) Grow large single crystals--Several changes in approach occurred in the crystal growth furnace. Steps were taken to maximize the crystal growth interface during growth by modifying liners, quartz, heat sinks, crucibles and various growth steps and temperature profiles. CG39 ingot

  4. Growth and luminescent properties of Yb3+--doped oxide single crystals for scintillator application

    International Nuclear Information System (INIS)

    Yoshikawa, A.; Ogino, H.; Shim, J.B.; Nikl, M.; Solovieva, N.; Fukuda, T.

    2004-01-01

    Rod-shaped (Lu 1-x Yb x ) 3 Al 5 O 12 with x=0.05, 0.15, 0.30 and (Y 1-x Yb x )AlO 3 with x=0.05, 0.10, 0.30 single crystals were grown by the micro-pulling-down method. Edge-defined film-fed growth method was used to prepare (Y 0.9 Yb 0.1 )VO 4 crystal, while Ca 8 (La 1.98 Yb 0.02 )(PO 4 ) 6 O 2 crystal was grown by the Czochralski method. Luminescence of these crystals was studied with main attention paid to the charge transfer emission of Yb 3+ . Temperature tuned decay times in the time scale of units--tens of nanosecond was measured as a feature possibly interesting for an application in scintillation detectors in positron emission tomography

  5. Growth of InAs/InP core-shell nanowires with various pure crystal structures.

    Science.gov (United States)

    Gorji Ghalamestani, Sepideh; Heurlin, Magnus; Wernersson, Lars-Erik; Lehmann, Sebastian; Dick, Kimberly A

    2012-07-20

    We have studied the epitaxial growth of an InP shell on various pure InAs core nanowire crystal structures by metal-organic vapor phase epitaxy. The InP shell is grown on wurtzite (WZ), zinc-blende (ZB), and {111}- and {110}-type faceted ZB twin-plane superlattice (TSL) structures by tuning the InP shell growth parameters and controlling the shell thickness. The growth results, particularly on the WZ nanowires, show that homogeneous InP shell growth is promoted at relatively high temperatures (∼500 °C), but that the InAs nanowires decompose under the applied conditions. In order to protect the InAs core nanowires from decomposition, a short protective InP segment is first grown axially at lower temperatures (420-460 °C), before commencing the radial growth at a higher temperature. Further studies revealed that the InP radial growth rate is significantly higher on the ZB and TSL nanowires compared to WZ counterparts, and shows a strong anisotropy in polar directions. As a result, thin shells were obtained during low temperature InP growth on ZB structures, while a higher temperature was used to obtain uniform thick shells. In addition, a schematic growth model is suggested to explain the basic processes occurring during the shell growth on the TSL crystal structures.

  6. Growth of InAs/InP core–shell nanowires with various pure crystal structures

    International Nuclear Information System (INIS)

    Gorji Ghalamestani, Sepideh; Heurlin, Magnus; Lehmann, Sebastian; Dick, Kimberly A; Wernersson, Lars-Erik

    2012-01-01

    We have studied the epitaxial growth of an InP shell on various pure InAs core nanowire crystal structures by metal–organic vapor phase epitaxy. The InP shell is grown on wurtzite (WZ), zinc-blende (ZB), and {111}- and {110}-type faceted ZB twin-plane superlattice (TSL) structures by tuning the InP shell growth parameters and controlling the shell thickness. The growth results, particularly on the WZ nanowires, show that homogeneous InP shell growth is promoted at relatively high temperatures (∼500 °C), but that the InAs nanowires decompose under the applied conditions. In order to protect the InAs core nanowires from decomposition, a short protective InP segment is first grown axially at lower temperatures (420–460 °C), before commencing the radial growth at a higher temperature. Further studies revealed that the InP radial growth rate is significantly higher on the ZB and TSL nanowires compared to WZ counterparts, and shows a strong anisotropy in polar directions. As a result, thin shells were obtained during low temperature InP growth on ZB structures, while a higher temperature was used to obtain uniform thick shells. In addition, a schematic growth model is suggested to explain the basic processes occurring during the shell growth on the TSL crystal structures. (paper)

  7. Growth and spectroscopic, thermodynamic and nonlinear optical studies of L-threonine phthalate crystal

    Science.gov (United States)

    Theras, J. Elberin Mary; Kalaivani, D.; Jayaraman, D.; Joseph, V.

    2015-10-01

    L-threonine phthalate (LTP) single crystal has been grown using a solution growth technique at room temperature. Single crystal X-ray diffraction analysis reveals that LTP crystallizes in monoclinic crystal system with space group C2/c. The optical absorption studies show that the crystal is transparent in the entire visible region with a cut-off wavelength 309 nm. The optical band gap is found to be 4.05 eV. The functional groups of the synthesized compound have been identified by FTIR spectral analysis. The functional groups present in the material were also confirmed by FT-RAMAN spectroscopy. Surface morphology and the presence of various elements were studied by SEM-EDAX analysis. The thermal stability of LTP single crystal has been analyzed by TGA/DTA studies. The thermodynamic parameters such as activation energy, entropy, enthalpy and Gibbs free energy were determined for the grown material using TG data and Coats-Redfern relation. Since the grown crystal is centrosymmetric, Z-Scan studies were carried out for analyzing the third order nonlinear optical property. The nonlinear absorption coefficient, nonlinear refractive index and susceptibility have been measured using Z-Scan technique.

  8. Solvent effects on the crystal growth structure and morphology of the pharmaceutical dirithromycin

    Science.gov (United States)

    Wang, Yuan; Liang, Zuozhong

    2017-12-01

    Solvent effects on the crystal structure and morphology of pharmaceutical dirithromycin molecules were systematically investigated using both experimental crystallization and theoretical simulation. Dirithromycin is one of the new generation of macrolide antibiotics with two polymorphic forms (Form I and Form II) and many solvate forms. Herein, six solvates of the dirithromycin, including acetonitrile, acetonitrile/water, acetone, 1-propanol, N,N-dimethylformamide (DMF) and cyclohexane, were studied. Experimentally, we crystallized the dirithromycin molecules in different solvents by the solvent evaporating method and measured the crystal structures with the X-ray diffraction (XRD). We compared these crystal structures of dirithromycin solvates and analyzed the solvent property-determined structure evolution. The solvents have a strong interaction with the dirithromycin molecule due to the formation of inter-molecular interactions (such as the hydrogen bonding and close contacts (sum of vdW radii)). Theoretically, we calculated the ideal crystal habit based on the solvated structures with the attachment growth (AE) model. The predicted morphologies and aspect ratios of dirithromycin solvates agree well with the experimental results. This work could be helpful to better understand the structure and morphology evolution of solvates controlled by solvents and guide the crystallization of active pharmaceutical ingredients in the pharmaceutical industry.

  9. Synthesis, growth, structural, optical and thermal properties of a new organic salt crystal: 3-nitroanilinium trichloroacetate

    Science.gov (United States)

    Selvakumar, E.; Chandramohan, A.; Anandha Babu, G.; Ramasamy, P.

    2014-09-01

    A new organic non-linear optical salt 3-nitroanilinium trichloroacetate has been synthesized and single crystals grown by slow solvent evaporation solution growth technique at room temperature using methanol as the solvent. The 1H and 13C Nuclear magnetic resonance spectra were recorded to establish the molecular structure of the title salt. The crystal structure of the title crystal has been determined by single crystal X-ray diffraction analysis and it belongs to monoclinic crystal system with non-centrosymmetric space group P21. Fourier transform infrared spectral study has been carried out to confirm the presence of various functional groups. The optical transmittance spectrum was recorded in the range 200-2500 nm, to find the optical transmittance window and lower cut off wavelength. The thermo gravimetric and differential thermal analyses were carried out to establish the thermal stability of the title crystal. The second harmonic generation in the title crystal was confirmed by the modified Kurtz-Perry powder test employing the Nd: YAG laser as the source for infrared radiation.

  10. Seeded growth of boron arsenide single crystals with high thermal conductivity

    Science.gov (United States)

    Tian, Fei; Song, Bai; Lv, Bing; Sun, Jingying; Huyan, Shuyuan; Wu, Qi; Mao, Jun; Ni, Yizhou; Ding, Zhiwei; Huberman, Samuel; Liu, Te-Huan; Chen, Gang; Chen, Shuo; Chu, Ching-Wu; Ren, Zhifeng

    2018-01-01

    Materials with high thermal conductivities are crucial to effectively cooling high-power-density electronic and optoelectronic devices. Recently, zinc-blende boron arsenide (BAs) has been predicted to have a very high thermal conductivity of over 2000 W m-1 K-1 at room temperature by first-principles calculations, rendering it a close competitor for diamond which holds the highest thermal conductivity among bulk materials. Experimental demonstration, however, has proved extremely challenging, especially in the preparation of large high quality single crystals. Although BAs crystals have been previously grown by chemical vapor transport (CVT), the growth process relies on spontaneous nucleation and results in small crystals with multiple grains and various defects. Here, we report a controllable CVT synthesis of large single BAs crystals (400-600 μm) by using carefully selected tiny BAs single crystals as seeds. We have obtained BAs single crystals with a thermal conductivity of 351 ± 21 W m-1 K-1 at room temperature, which is almost twice as conductive as previously reported BAs crystals. Further improvement along this direction is very likely.

  11. Growth of rare-earth doped single crystal yttrium aluminum garnet fibers

    Science.gov (United States)

    Bera, Subhabrata; Nie, Craig D.; Harrington, James A.; Cheng, Long; Rand, Stephen C.; Li, Yuan; Johnson, Eric G.

    2018-02-01

    Rare-earth doped single crystal (SC) yttrium aluminum garnet (YAG) fibers have great potential as high-power laser gain media. SC fibers combine the superior material properties of crystals with the advantages of a fiber geometry. Improving processing techniques, growth of low-loss YAG SC fibers have been reported. A low-cost technique that allows for the growth of optical quality Ho:YAG single crystal (SC) fibers with different dopant concentrations have been developed and discussed. This technique is a low-cost sol-gel based method which offers greater flexibility in terms of dopant concentration. Self-segregation of Nd ions in YAG SC fibers have been observed. Such a phenomenon can be utilized to fabricate monolithic SC fibers with graded index.

  12. Growth of Bulk Wide Bandgap Semiconductor Crystals and Their Potential Applications

    Science.gov (United States)

    Chen, Kuo-Tong; Shi, Detang; Morgan, S. H.; Collins, W. Eugene; Burger, Arnold

    1997-01-01

    Developments in bulk crystal growth research for electro-optical devices in the Center for Photonic Materials and Devices since its establishment have been reviewed. Purification processes and single crystal growth systems employing physical vapor transport and Bridgman methods were assembled and used to produce high purity and superior quality wide bandgap materials such as heavy metal halides and II-VI compound semiconductors. Comprehensive material characterization techniques have been employed to reveal the optical, electrical and thermodynamic properties of crystals, and the results were used to establish improved material processing procedures. Postgrowth treatments such as passivation, oxidation, chemical etching and metal contacting during the X-ray and gamma-ray device fabrication process have also been investigated and low noise threshold with improved energy resolution has been achieved.

  13. Crystal growth and scintillation properties of multi-component oxide single crystals: Ce:GGAG and Ce:La-GPS

    Energy Technology Data Exchange (ETDEWEB)

    Yoshikawa, A., E-mail: yoshikawa@imr.tohoku.ac.jp [Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579 (Japan); C& A Corporation, 6-6-40 Aramaki Aza Aoba, Aoba-ku, Sendai 980-8579 (Japan); Kamada, K. [New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579 (Japan); C& A Corporation, 6-6-40 Aramaki Aza Aoba, Aoba-ku, Sendai 980-8579 (Japan); Kurosawa, S. [Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579 (Japan); Shoji, Y. [Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577 (Japan); C& A Corporation, 6-6-40 Aramaki Aza Aoba, Aoba-ku, Sendai 980-8579 (Japan); Yokota, Y. [New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579 (Japan); Chani, V.I. [Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577 (Japan); Nikl, M. [Institute of Physics, AS CR, Cukrovarnická 10, 162 53 Prague (Czech Republic)

    2016-01-15

    Crystal growth by micro-pulling-down, Czochralski, and floating zone methods and scintillation properties of Ce:Gd{sub 3}(Ga,Al){sub 5}O{sub 12} (Ce:GGAG) multi-component oxide garnets, and Ce:Gd{sub 2}Si{sub 2}O{sub 7} (Ce:GPS) or Ce:(La,Gd){sub 2}Si{sub 2}O{sub 7} (Ce:La-GPS) pyro-silicates are reviewed. GGAG crystals demonstrated practically linear dependences of some of the parameters including lattice constant, emission wavelength, and band gap on Ga content. However, emission intensity, light yield and energy resolution showed maxima for intermediate compositions. GGAG crystals had the highest light yield of 56,000 photon/MeV for Ga content of 2.7 atoms per garnet formula unit. Similarly the light yield and energy resolution of La-GPS showed the highest values of 40,000 photon/MeV and 4.4%@662 keV, respectively, for La-GPS containing 10% of La. Moreover, La-GPS demonstrated stable scintillation performance up to 200 °C.

  14. Crystal growth of Li{sup 10}B{sub 3}O{sub 5}

    Energy Technology Data Exchange (ETDEWEB)

    Sugiyama, Akira [Kansai Research Establishment, Japan Atomic Energy Research Institute, Kizu, Kyoto (Japan); Gallagher, Hugh G.; Han, Thomas P.J.

    1999-09-01

    The growth of boron 10 isotope enriched L{sup 10}BO (Li{sup 10}B{sub 3}O{sub 5}) optical crystal has been developed from Top-Seeded-Solution-Growth using a resistance furnace. In the preparation for growth materials, we have made further improvement on a charge loading technique to a crucible and succeeded in forming suitable high temperature flux for producing crystals. Adequate temperature gradient of 1K/cm inside the crucible was achieved from searching for a combination of setting temperatures in the vertical three-zone furnace and installing a ceramic ring under the crucible. We have also optimized seed holder configuration and established growth conditions by several attempts. As a result, two good quality L{sup 10}BO crystals were produced with sizes of 14 x 25 x 22 mm and 13 x 10 x 12 mm from <001> oriented seed crystals. Although these sizes were limited by the size of the crucible used, appropriate oriented samples were extracted for detailed studies in optical measurements. (author)

  15. Large potassium dihydrogen phosphate crystal growth using a three-vessel system for fusion lasers

    International Nuclear Information System (INIS)

    Sasaki, T.; Yokotani, A.; Yamanaka, T.; Nakai, S.; Yamanaka, C.

    1989-01-01

    Large scale laser fusion experiments are being performed in the Institute of Laser Engineering, Osaka University, using the glass laser system Gekko-XII. For this laser, very large nonlinear crystals of potassium dihydrogen phosphate (KDP) with a cross section over 40 X 40 cm is needed as a frequency converter to obtain a short wavelength laser. Generally the temperature falling method (TFM) is used to grow such a huge crystal, but the volume of the growing vessel becomes tremendously large. The three-vessel system (TVS), which is a constant temperature and concentration method, allows better control of supersaturation than does the TFM, and the volume of the main growth vessel can be smaller than that in the case of the TFM. The authors have constructed a TVS. The KDP crystal grew in the growth tank that was kept at a constant temperature of 20 +- 0.01 0 C. The authors show the growth history of the KDP crystal of a 40- X 40-cm cross section. This system is now being operated to obtain the KDP of 100-cm height, and a theoretical estimate of the growth rate is under consideration. These results are presented

  16. Growth of Nd doped LiNbO3 crystals using Bridgman method and its ...

    Indian Academy of Sciences (India)

    Administrator

    state for several hours so that a stable solid–liquid inter- face could ... growth would hold for about one week. ... Figure 4. The absorption spectrum of the Nd : LiNbO3 crystal. Figure 5. .... This work was supported by K C Wong Magna Fund in.

  17. Mechanisms of heterogeneous crystal growth in atomic systems: insights from computer simulations.

    Science.gov (United States)

    Gulam Razul, M S; Hendry, J G; Kusalik, P G

    2005-11-22

    In this paper we analyze the atomic-level structure of solid/liquid interfaces of Lennard-Jones fcc systems. The 001, 011, and 111 faces are examined during steady-state growth and melting of these crystals. The mechanisms of crystallization and melting are explored using averaged configurations generated during these steady-state runs, where subsequent tagging and labeling of particles at the interface provide many insights into the detailed atomic behavior at the freezing and melting interfaces. The interfaces are generally found to be rough and we observe the structure of freezing and melting interfaces to be very similar. Large structural fluctuations with solidlike and liquidlike characteristics are apparent in both the freezing and melting interfaces. The behavior at the interface observed under either growth or melting conditions reflects a competition between ordering and disordering processes. In addition, we observe atom hopping that imparts liquidlike characteristics to the solid side of the interfaces for all three crystal faces. Solid order is observed to extend as rough, three-dimensional protuberances through the interface, particularly for the 001 and 011 faces. We are also able to reconcile our different measures for the interfacial width and address the onset of asymmetry in the growth rates at high rates of crystal growth/melting.

  18. Blocking rapid ice crystal growth through nonbasal plane adsorption of antifreeze proteins

    NARCIS (Netherlands)

    Olijve, L.L.C.; Meister, K.; DeVries, A.L.; Duman, J.G.; Guo, S.; Bakker, H.J.; Voets, I.K.

    2016-01-01

    Antifreeze proteins (AFPs) are a unique class of proteins that bind to growing ice crystal surfaces and arrest further ice growth. AFPs have gained a large interest for their use in antifreeze formulations for water-based materials, such as foods, waterborne paints, and organ transplants. Instead of

  19. Crystal growth and optical properties of Gd admixed Ce-doped Lu.sub.2./sub.Si.sub.2./sub.O.sub.7./sub. single crystals

    Czech Academy of Sciences Publication Activity Database

    Horiai, T.; Kurosawa, S.; Murakami, R.; Yamaji, A.; Shoji, Y.; Ohashi, Y.; Pejchal, Jan; Kamada, K.; Yokota, Y.; Yoshikawa, A.

    2017-01-01

    Roč. 468, Jun (2017), s. 391-394 ISSN 0022-0248 Grant - others:AV ČR(CZ) JSPS-17-18 Program:Bilaterální spolupráce Institutional support: RVO:68378271 Keywords : growth from melt * seed crystals * single crystal growth * oxides * scintillator materials Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.751, year: 2016

  20. Modifications of micro-pulling-down method for the growth of selected Li-containing crystals for neutron scintillator and VUV scintillation crystals

    Science.gov (United States)

    Pejchal, J.; Fujimoto, Y.; Chani, V.; Yanagida, T.; Yokota, Y.; Yoshikawa, A.; Nikl, M.; Beitlerova, A.

    2012-12-01

    To develop new and efficient neutron scintillator, Ti-doped LiAlO2 single crystal was grown by micro-pulling-down method. The X-ray excited radioluminescence spectra and neutron light yield were measured. Positive effect of Mg codoping on the overall scintillation efficiency was found. The BaLu2F8 single crystal was grown by micro-pulling-down method using low temperature gradient at growth interface and applying quenching immediately after growth process.

  1. [Growth of codoped CdWO4 crystals by Bridgman method and their optical spectra].

    Science.gov (United States)

    Yu, Can; Xia, Hai-Ping; Wang, Dong-Jie; Chen, Hong-Bing

    2011-09-01

    The CdWO4 crystals with good quality in the size of Phi25 mm x 120 mm, doped with Co in 0.5% molar fraction in the raw composition, were grown by the Bridgman method by taking -70 degrees C x cm(-1) of solid-liquid interface and -0.50 mm x h(-1) growth rate. The crystal presents transparence and deep blue. The X-ray diffraction (XRD) was used to characterize the crystals. Three absorption peaks at 518, 564 and 655 nm respectively, which are attributed to the overlapping of 4 T1 (4F) --> 4A2 (4F) and 4 T1 (4F) --> 4 T1 (4P) of Co2+ octahedrons, and a wide band centered at 1 863 nm, which is attributed to 4Ti (4F) --> 4 T2 (4F), was observed. The absorption results indicated that the Co ions presented +2 valence in crystal and located within the distorted oxygen octahedrons. The crystal-field parameter D(q) and the Racah parameter B were estimated to be 990 and 726.3 cm(-1) respectively based on the absorption spectra. A fluorescence emission at 778 nm (4T1 (4P) --> 4 T1 (4F)) for codoped CdWO4 crystals was observed under excitation by 520 nm light. It can be deduced from the changes in absorption and emission intensity of different parts of crystal that the concentration of Co2+ ion in crystal increased along growing direction and the effective distribution coefficient of Co2+ ion in CdWO4 crystal is less than 1.

  2. Interfacial structure of V2AlC thin films deposited on (112-bar 0)-sapphire

    International Nuclear Information System (INIS)

    Sigumonrong, Darwin P.; Zhang, Jie; Zhou, Yanchun; Music, Denis; Emmerlich, Jens; Mayer, Joachim; Schneider, Jochen M.

    2011-01-01

    Local epitaxy between V 2 AlC and sapphire without intentionally or spontaneously formed seed layers was observed by transmission electron microscopy. Our ab initio calculations suggest that the most stable interfacial structure is characterized by the stacking sequence ...C-V-Al-V//O-Al..., exhibiting the largest work of separation for the configurations studied and hence strong interfacial bonding. It is proposed that a small misfit accompanied by strong interfacial bonding enable the local epitaxial growth of V 2 AlC on (112-bar 0)-sapphire.

  3. Potassium terbium fluoride crystal growth development for faraday rotator discs fabrication, 6 July 1978--6 February 1979

    Energy Technology Data Exchange (ETDEWEB)

    1979-05-17

    Crystal growth experiments were performed and growth of KTb/sub 3/F/sub 10/ crystals were accomplished. The crystal growth experiments consisted of hot zone modification and development of growth parameters. Several boules of KTb/sub 3/F/sub 10/ 30 to 40mm in diameter and one boule 50mm in diameter were grown at rates varying from .5mm/hr to 3.0mm/hr. The crystals evaluated display excellent optical quality. The optical path distortion was less than 0.5 fringe/cm at 633nm as viewed in Twyman--Green interferometry. Growth of large crystals has been limited by mechanical cleavage.

  4. Determination of the rate of crystal growth from the gas phase under conditions of turbulent free convection

    Science.gov (United States)

    Alad'Ev, S. I.

    1987-04-01

    Crystal growth in vertical and horizontal cylindrical vials, with the substrate and the source serving as the vial ends, is investigated analytically, assuming that the medium consists of a binary mixture of an active and an inert gas. The active gas is made up of the gaseous products of reactions taking place at the substrate and at the source. It is shown that turbulent free convection leads to an increase in crystal growth rate. All other conditions being equal, crystal growth in vertical vials is greater than that in horizontal ones; in both cases crystal growth rate increases with the vial radius, temperature gradient in the gas phase, and gas phase density. The results are compared with experimental data on the growth of Ge crystals in the Ge-GeI4 system.

  5. Sapphire Energy - Integrated Algal Biorefinery

    Energy Technology Data Exchange (ETDEWEB)

    White, Rebecca L. [Sapphire Energy, Inc., Columbus, NM (United States). Columbus Algal Biomass Farm; Tyler, Mike [Sapphire Energy, Inc., San Diego, CA (United States)

    2015-07-22

    Sapphire Energy, Inc. (SEI) is a leader in large-scale photosynthetic algal biomass production, with a strongly cohesive research, development, and operations program. SEI takes a multidiscipline approach to integrate lab-based strain selection, cultivation and harvest and production scale, and extraction for the production of Green Crude oil, a drop in replacement for traditional crude oil.. SEI’s technical accomplishments since 2007 have produced a multifunctional platform that can address needs for fuel, feed, and other higher value products. Figure 1 outlines SEI’s commercialization process, including Green Crude production and refinement to drop in fuel replacements. The large scale algal biomass production facility, the SEI Integrated Algal Biorefinery (IABR), was built in Luna County near Columbus, New Mexico (see fig 2). The extraction unit was located at the existing SEI facility in Las Cruces, New Mexico, approximately 95 miles from the IABR. The IABR facility was constructed on time and on budget, and the extraction unit expansion to accommodate the biomass output from the IABR was completed in October 2012. The IABR facility uses open pond cultivation with a proprietary harvesting method to produce algal biomass; this biomass is then shipped to the extraction facility for conversion to Green Crude. The operation of the IABR and the extraction facilities has demonstrated the critical integration of traditional agricultural techniques with algae cultivation knowledge for algal biomass production, and the successful conversion of the biomass to Green Crude. All primary unit operations are de-risked, and at a scale suitable for process demonstration. The results are stable, reliable, and long-term cultivation of strains for year round algal biomass production. From June 2012 to November 2014, the IABR and extraction facilities produced 524 metric tons (MT) of biomass (on a dry weight basis), and 2,587 gallons of Green Crude. Additionally, the IABR

  6. Generation of continuous-wave single-frequency 1.5 W 378 nm radiation by frequency doubling of a Ti:sapphire laser.

    Science.gov (United States)

    Cha, Yong-Ho; Ko, Kwang-Hoon; Lim, Gwon; Han, Jae-Min; Park, Hyun-Min; Kim, Taek-Soo; Jeong, Do-Young

    2010-03-20

    We have generated continuous-wave single-frequency 1.5 W 378 nm radiation by frequency doubling a high-power Ti:sapphire laser in an external enhancement cavity. An LBO crystal that is Brewster-cut and antireflection coated on both ends is used for a long-term stable frequency doubling. By optimizing the input coupler's reflectivity, we could generate 1.5 W 378 nm radiation from a 5 W 756 nm Ti:sapphire laser. According to our knowledge, this is the highest CW frequency-doubled power of a Ti:sapphire laser.

  7. Crystal growth, morphology, thermal and spectral studies of an organosulfur nonlinear optical bis(guanidinium) 5-sulfosalicylate (BG5SS) single crystals

    Science.gov (United States)

    Dhavamurthy, M.; Peramaiyan, G.; Babu, K. Syed Suresh; Mohan, R.

    2015-04-01

    Organosulfur nonlinear optical single crystals of orthorhombic bis(guanidinium) 5-sulfosalicylate (2CH6N3 +·C7H4O6S2-·H2O) with dimension 14 mm × 4 mm × 5 mm have been grown from methanol and water solvents in 1:1 ratio by the slow evaporation growth technique. The crystal structure and morphology of the crystals have been studied by single-crystal X-ray diffraction. FTIR spectroscopic studies were carried out to identify the functional groups and vibrational modes present in the grown crystals. The UV-Vis spectrum was studied to analyze the linear optical properties of the grown crystals. The thermal gravimetric analysis was conducted on the grown crystals, and the result revealed that the grown crystal is thermally stable up to 65 °C. The dielectric tensor components ɛ 11, ɛ 22 and ɛ 33 of BG5SS crystal were evaluated as a function of frequency at 40 °C. The surface laser damage threshold for the grown crystal was measured using Nd:YAG laser. Further, Vickers micro-hardness study was carried out to analyze the mechanical strength of the grown crystals for various loads.

  8. Numerical simulations of crystal growth in a transdermal drug delivery system

    Science.gov (United States)

    Zeng, Jianming; Jacob, Karl I.; Tikare, Veena

    2004-02-01

    Grain growth by precipitation and Ostwald ripening in an unstressed matrix of a dissolved crystallizable component was simulated using a kinetic Monte Carlo model. This model was used previously to study Ostwald ripening in the high crystallizable component regime and was shown to correctly simulate solution, diffusion and precipitation. In this study, the same model with modifications was applied to the low crystallizable regime of interest to the transdermal drug delivery system (TDS) community. We demonstrate the model's utility by simulating precipitation and grain growth during isothermal storage at different supersaturation conditions. The simulation results provide a first approximation for the crystallization occurring in TDS. It has been reported that for relatively higher temperature growth of drug crystals in TDS occurs only in the middle third of the polymer layer. The results from the simulations support these findings that crystal growth is limited to the middle third of the region, where the availability of crystallizable components is the highest, for cluster growth at relatively high temperature.

  9. Self-Aligned Growth of Organic Semiconductor Single Crystals by Electric Field.

    Science.gov (United States)

    Kotsuki, Kenji; Obata, Seiji; Saiki, Koichiro

    2016-01-19

    We proposed a novel but facile method for growing organic semiconductor single-crystals via solvent vapor annealing (SVA) under electric field. In the conventional SVA growth process, nuclei of crystals appeared anywhere on the substrate and their crystallographic axes were randomly distributed. We applied electric field during the SVA growth of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) on the SiO2/Si substrate on which a pair of electrodes had been deposited beforehand. Real-time observation of the SVA process revealed that rodlike single crystals grew with their long axes parallel to the electric field and bridged the prepatterned electrodes. As a result, C8-BTBT crystals automatically formed a field effect transistor (FET) structure and the mobility reached 1.9 cm(2)/(V s). Electric-field-assisted SVA proved a promising method for constructing high-mobility single-crystal FETs at the desired position by a low-cost solution process.

  10. The growth rates of KDP crystals in solutions with potassium permanganate additives

    Science.gov (United States)

    Egorova, A. E.; Vorontsov, D. A.; Nezhdanov, A. V.; Noskova, A. N.; Portnov, V. N.

    2017-01-01

    We have found that growth of the {101} faces of a KDP (KH2PO4) crystal is suppressed, and the growth rate of the {100} faces passes through the maximum with increasing addition of KMnO4 to a solution with pH=4.7. We have concluded that the [MnH2PO4]2+ complex and MnO2 particles affect the growth kinetics. The X-ray and electronic paramagnetic resonance data show that manganese is incorporated into the crystal in the form of Mn3+ and Mn4+. The local excess of a positive charge in the area with incorporated [MnH2PO4]2+ complex can be compensated by the shift of the hydrogen atoms in the KDP structure.

  11. Growth of tourmaline single crystals containing transition metal elements in hydrothermal solutions

    Science.gov (United States)

    Setkova, Tatiana; Shapovalov, Yury; Balitsky, Vladimir

    2011-03-01

    Interest in the growth of tourmaline single crystals is based on the promising piezoelectric and pyroelectric properties of this material compared to quartz crystals currently in use. Moreover, synthetic tourmaline can be used as a substitute for the natural stone in the jewelry industry similar to other synthetic analogues of gemstones. Single crystals of colored Co-, Ni-, Fe-, (Ni,Cr)-, (Ni,Fe)-, and (Co,Ni,Cr)-containing tourmalines with concentration of transition metal elements up to 16 wt% on a seed have been grown from complex boron-containing hydrothermal solutions at a range of temperatures 400-750 °C and pressures 100 MPa. Experiments were conducted under conditions of a thermal gradient in titanium and chromium-nickel autoclaves. Tourmaline growth on a seed crystal occurs only if separate tourmaline-forming components (monocrystalline corundum and quartz bars) are used as charge. All tourmalines specified above grow in analogous (+) direction of the optical axis with a speed of 0.05 mm/day by faces of the trigonal pyramid, except tourmalines containing chromium. They grow in analogous (+0001) direction with a speed 0.05 mm/day, and in antilogous (-0001) direction with a speed of 0.01 mm/day by faces of the trigonal pyramid and in prism direction with a speed of 0.001 mm/day. Along with the large single crystals, a great amount of finest (30-150 μm in size) tourmaline crystals was formed during the runs by spontaneous nucleation both on the surface of the seed crystals and in the charge.

  12. Mimicking the biomolecular control of calcium oxalate monohydrate crystal growth: effect of contiguous glutamic acids.

    Science.gov (United States)

    Grohe, Bernd; Hug, Susanna; Langdon, Aaron; Jalkanen, Jari; Rogers, Kem A; Goldberg, Harvey A; Karttunen, Mikko; Hunter, Graeme K

    2012-08-21

    Scanning confocal interference microscopy (SCIM) and molecular dynamics (MD) simulations were used to investigate the adsorption of the synthetic polypeptide poly(l-glutamic acid) (poly-glu) to calcium oxalate monohydrate (COM) crystals and its effect on COM formation. At low concentrations (1 μg/mL), poly-glu inhibits growth most effectively in ⟨001⟩ directions, indicating strong interactions of the polypeptide with {121} crystal faces. Growth in directions was inhibited only marginally by 1 μg/mL poly-glu, while growth in directions did not appear to be affected. This suggests that, at low concentrations, poly-glu inhibits lattice-ion addition to the faces of COM in the order {121} > {010} ≥ {100}. At high concentrations (6 μg/mL), poly-glu resulted in the formation of dumbbell-shaped crystals featuring concave troughs on the {100} faces. The effects on crystal growth indicate that, at high concentrations, poly-glu interacts with the faces of COM in the order {100} > {121} > {010}. This mirrors MD simulations, which predicted that poly-glu will adsorb to a {100} terrace plane (most calcium-rich) in preference to a {121} (oblique) riser plane but will adsorb to {121} riser plane in preference to an {010} terrace plane (least calcium-rich). The effects of different poly-glu concentration on COM growth (1-6 μg/mL) may be due to variations between the faces in terms of growth mechanism and/or (nano)roughness, which can affect surface energy. In addition, 1 μg/mL might not be adequate to reach the critical concentration for poly-glu to significantly pin step movement on {100} and {010} faces. Understanding the mechanisms involved in these processes is essential for the development of agents to reduce recurrence of kidney stone disease.

  13. Guided Growth of Horizontal ZnSe Nanowires and their Integration into High-Performance Blue-UV Photodetectors.

    Science.gov (United States)

    Oksenberg, Eitan; Popovitz-Biro, Ronit; Rechav, Katya; Joselevich, Ernesto

    2015-07-15

    Perfectly aligned horizontal ZnSe nano-wires are obtained by guided growth, and easily integrated into high-performance blue-UV photodetectors. Their crystal phase and crystallographic orientation are controlled by the epitaxial relations with six different sapphire planes. Guided growth paves the way for the large-scale integration of nanowires into optoelectronic devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Investigating the large degeneracy Kondo lattice metamagnet CeTiGe: Crystal growth and doping studies

    Energy Technology Data Exchange (ETDEWEB)

    Gruner, T.; Caroca-Canales, N.; Deppe, M.; Geibel, C. [MPI fuer Chemische Physik fester Stoffe, 01187, Dresden (Germany); Sereni, J. [Centro Atomico Bariloche, 8400, S. C. de Bariloche (Argentina)

    2011-07-01

    CeTiGe is a paramagnetic Kondo lattice system with a large orbital degeneracy involved in the formation of the heavy Fermion ground state. Recently we discovered that this compound presents a huge metamagnetic transition at B{sub MMT} {approx} 13 T, with much larger anomalies in magnetization, magnetoresistance and magnetostriction than in the archetypical Kondo lattice metamagnet CeRu{sub 2}Si{sub 2}. Since CeTiGe forms in a pronounced peritectic reaction the growth of single crystals is difficult. We therefore studied the Ce-Ti-Ge ternary metallographic phase diagram to get a sound basis for future crystal growth attempts. Preliminary results of growth experiments based on these studies are promising and shall be discussed. Furthermore, Ti-rich CeTiGe was recently reported to present a high temperature phase crystallizing in the closely related CeScSi structure type. In order to study this structural instability and the effect on the physical properties, we studied the effect of substituting Sc for Ti, since pure CeScGe crystallizes in the CeScSi structure type. In well annealed samples we observed a two phase region in the range 10% - 25%-Sc-substitution. Preliminary investigations of the CeSc{sub x}Ti{sub 1-x}Ge alloy suggest it is a promising candidate for the observation of a ferromagnetic quantum critical point in a large degeneracy Kondo lattice system.

  15. Advances in Single-Crystal Fibers and Thin Rods Grown by Laser Heated Pedestal Growth

    Directory of Open Access Journals (Sweden)

    Gisele Maxwell

    2017-01-01

    Full Text Available Single-crystal fibers are an intermediate between laser crystals and doped glass fibers. They have the advantages of both guiding laser light and matching the efficiencies found in bulk crystals, which is making them ideal candidates for high-power laser and fiber laser applications. This work focuses on the growth of a flexible fiber with a core of dopant (Er, Nd, Yb, etc. and a polycrystalline clad of yttrium aluminum garnet (YAG that will exhibit good wave guiding properties. Direct growth or a combination of growth and cladding experiments are described. Scattering loss measurements at visible wavelengths, along with dopant profile characterization with damage threshold results, are also presented. For single-pass amplification, a single-pass linear gain of 7.4 was obtained for 29 nJ pulses of 5 ns duration at 1 MHz repetition rate. We also obtained a laser efficiency of over 58% in a diode-pumped configuration. These results confirm the potential for single-crystal fibers to overcome the limitations of the glass fibers commonly used in fiber lasers, making them prime candidates for high-power compact fiber lasers and amplifiers.

  16. Polyol synthesis of silver nanoplates: The crystal growth mechanism based on a rivalrous adsorption

    International Nuclear Information System (INIS)

    Luo Xiaolin; Li Zongxiao; Yuan Chunlan; Chen Yashao

    2011-01-01

    Highlights: → Silver nanoplates have been successfully synthesized by polyol reduction in the presence of poly (vinylpyrrolidone) (PVP) and HNO 3 . → Due to the discovery of CN - ions in the solution, a mechanism for the anisotropic growth of silver nanoplates is systematically discussed. → TG, FT-IR and SERS were used to provide some direct evidences of rivalrous adsorption between PVP and CN - ions on the surface of the silver crystals. - Abstract: A polyol reducing approach has been applied to synthesize silver nanoplates with an average thickness of 50 nm and edge length of 3 μm in the presence of poly (vinylpyrrolidone) (PVP) and HNO 3 . X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscropy (TEM), and electron diffraction are used to characterize these silver nanoplates. Findings indicate that the nanoplates are single crystals and with their basal plane as (1 1 1) lattice plane. On the basis of the results from thermogravimetric analysis (TG), Fourier transform infrared spectroscopy (FT-IR) and Raman spectroscopy, a crystal growth mechanism based on the rivalrous adsorption between PVP and CN - ions on the surface of silver nanoplates is supposed to explain the crystal anisotropic growth.

  17. Surface morphology and preferential orientation growth of TaC crystals formed by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xiong Xiang, E-mail: Xiong228@sina.co [State Key Lab for Powder Metallurgy, Central South University, Changsha 410083 (China); Chen Zhaoke; Huang Baiyun; Li Guodong [State Key Lab for Powder Metallurgy, Central South University, Changsha 410083 (China); Zheng Feng [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Xiao Peng; Zhang Hongbo [State Key Lab for Powder Metallurgy, Central South University, Changsha 410083 (China)

    2009-04-02

    TaC film was deposited on (002) graphite sheet by isothermal chemical vapor deposition using TaCl{sub 5}-Ar-C{sub 3}H{sub 6} mixtures, with deposition temperature 1200 {sup o}C and pressure about 200 Pa. The influence of deposition position (or deposition rate) on preferential orientation and surface morphology of TaC crystals were investigated by X-ray diffraction and scanning electron microscopy methods. The deposits are TaC plus trace of C. The crystals are large individual columns with pyramidal-shape at deposition rate of 32.4-37.3 {mu}m/h, complex columnar at 37.3-45.6 {mu}m/h, lenticular-like at 45.6-54.6 {mu}m/h and cauliflower-like at 54.6-77.3 {mu}m/h, with <001>, near <001>, <110> and no clear preferential orientation, respectively. These results agree in part with the preditions of the Pangarov's model of the relationship between deposition rate and preferential growth orientation. The growth mechanism of TaC crystals in <001>, near <001>, <111> and no clear preferential orientation can be fairly explained by the growth parameter {alpha} with Van der Drift's model, deterioration model and Meakin model. Furthermore, a nucleation and coalescence model is also proposed to explain the formation mechanism of <110> lenticular-like crystals.

  18. About Small Streams and Shiny Rocks: Macromolecular Crystal Growth in Microfluidics

    Science.gov (United States)

    vanderWoerd, Mark; Ferree, Darren; Spearing, Scott; Monaco, Lisa; Molho, Josh; Spaid, Michael; Brasseur, Mike; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    We are developing a novel technique with which we have grown diffraction quality protein crystals in very small volumes, utilizing chip-based, microfluidic ("LabChip") technology. With this technology volumes smaller than achievable with any laboratory pipette can be dispensed with high accuracy. We have performed a feasibility study in which we crystallized several proteins with the aid of a LabChip device. The protein crystals are of excellent quality as shown by X-ray diffraction. The advantages of this new technology include improved accuracy of dispensing for small volumes, complete mixing of solution constituents without bubble formation, highly repeatable recipe and growth condition replication, and easy automation of the method. We have designed a first LabChip device specifically for protein crystallization in batch mode and can reliably dispense and mix from a range of solution constituents. We are currently testing this design. Upon completion additional crystallization techniques, such as vapor diffusion and liquid-liquid diffusion will be accommodated. Macromolecular crystallization using microfluidic technology is envisioned as a fully automated system, which will use the 'tele-science' concept of remote operation and will be developed into a research facility aboard the International Space Station.

  19. Directory of crystal growth and solid state materials production and research

    Energy Technology Data Exchange (ETDEWEB)

    Connolly, T.F.; Battle, G.C.; Keesee, A.M. (comps.)

    1979-03-01

    This directory lists only those who returned questionnaires distributed by the Research Materials Information Center during 1978. The directory includes, in addition to crystal growers, those preparing starting materials for crystal growth and ultrapure noncrystalline research specimens. It also includes responses from those characterizing, or otherwise studying, the properties of materials provided by others. The international coverage of the directory is limited to the United States, Argentina, Australia, Bulgaria, Canada, Czechoslovakia, Egypt, Finland, East Germany, Hungary, India, Israel, Japan, Mexico, Poland, Romania, South Africa, Taiwan, Yugoslavia, and Zaire.

  20. Directory of crystal growth and solid state materials production and research

    International Nuclear Information System (INIS)

    Connolly, T.F.; Battle, G.C.; Keesee, A.M.

    1979-03-01

    This directory lists only those who returned questionnaires distributed by the Research Materials Information Center during 1978. The directory includes, in addition to crystal growers, those preparing starting materials for crystal growth and ultrapure noncrystalline research specimens. It also includes responses from those characterizing, or otherwise studying, the properties of materials provided by others. The international coverage of the directory is limited to the United States, Argentina, Australia, Bulgaria, Canada, Czechoslovakia, Egypt, Finland, East Germany, Hungary, India, Israel, Japan, Mexico, Poland, Romania, South Africa, Taiwan, Yugoslavia, and Zaire

  1. Synthesis and single crystal growth of perovskite semiconductor CsPbBr3

    Science.gov (United States)

    Zhang, Mingzhi; Zheng, Zhiping; Fu, Qiuyun; Chen, Zheng; He, Jianle; Zhang, Sen; Chen, Cheng; Luo, Wei

    2018-02-01

    As a typical representative of all-inorganic lead halide perovskites, cesium lead bromine (CsPbBr3) has attracted significant attention in recent years. The direct band gap semiconductor CsPbBr3 has a wide band gap of 2.25 eV and high average atomic number (Cs: 55, Pb: 82 and Br: 35), which meet most of the requirements for detection of X- and γ-ray radiation, such as high attenuation, high resistivity, and significant photoconductivity response. However, the growth of large volume CsPbBr3 single crystals remains a challenge. In this paper, the synthesis of CsPbBr3 polycrystalline powders by a chemical co-precipitation method was investigated and the optimum synthesis conditions were obtained. A large CsPbBr3 single crystal of 8 mm diameter and 60 mm length was obtained by a creative electronic dynamic gradient (EDG) method. X-ray diffraction (XRD) patterns and X-ray rocking curve showed that the CsPbBr3 crystal preferentially oriented in the (1 1 0) direction and had a low dislocation density and small residual stress in the crystal. The IR and UV-Vis transmittance and temperature-dependent photoluminescence (PL) spectra showed the crystal had a good basic optical performance. The almost linear current-voltage (I-V) curves implied good ohmic contact between the electrodes and crystal surfaces. The resistivity of the crystal was calculated 109-1010 Ω cm. The above results showed that the quality of the obtained crystal had met the demand of optoelectronic applications.

  2. Characteristics of surface acoustic waves in (11\\bar 2 0)ZnO film/ R-sapphire substrate structures

    Science.gov (United States)

    Wang, Yan; Zhang, ShuYi; Xu, Jing; Xie, YingCai; Lan, XiaoDong

    2018-02-01

    (11\\bar 2 0)ZnO film/ R-sapphire substrate structure is promising for high frequency acoustic wave devices. The propagation characteristics of SAWs, including the Rayleigh waves along [0001] direction and Love waves along [1ī00] direction, are investigated by using 3 dimensional finite element method (3D-FEM). The phase velocity ( v p), electromechanical coupling coefficient ( k 2), temperature coefficient of frequency ( TCF) and reflection coefficient ( r) of Rayleigh wave and Love wave devices are theoretically analyzed. Furthermore, the influences of ZnO films with different crystal orientation on SAW properties are also investigated. The results show that the 1st Rayleigh wave has an exceedingly large k 2 of 4.95% in (90°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate associated with a phase velocity of 5300 m/s; and the 0th Love wave in (0°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate has a maximum k 2 of 3.86% associated with a phase velocity of 3400 m/s. And (11\\bar 2 0)ZnO film/ R-sapphire substrate structures can be used to design temperature-compensated and wide-band SAW devices. All of the results indicate that the performances of SAW devices can be optimized by suitably selecting ZnO films with different thickness and crystal orientations deposited on R-sapphire substrates.

  3. Optical and structural behaviour of Mn implanted sapphire

    International Nuclear Information System (INIS)

    Marques, C.; Franco, N.; Kozanecki, A.; Silva, R.C. da; Alves, E.

    2006-01-01

    Sapphire single crystals were implanted at room temperature with 180 keV manganese ions to fluences up to 1.8 x 10 17 cm -2 . The samples were annealed at 1000 deg. C in oxidizing or reducing atmosphere. Surface damage was observed after implantation of low fluences, the amorphous phase being observed after implantation of 5 x 10 16 cm -2 , as seen by Rutherford backscattering spectroscopy under channelling conditions. Thermal treatments in air annealed most of the implantation related defects and promoted the redistribution of the manganese ions, in a mixed oxide phase. X-ray diffraction studies revealed the presence of MnAl 2 O 4 . On the contrary, similar heat treatments in vacuum led to enhanced out diffusion of Mn while the matrix remained highly damaged. The analysis of laser induced luminescence performed after implantation showed the presence of an intense red emission

  4. Site location and optical properties of Eu implanted sapphire

    International Nuclear Information System (INIS)

    Marques, C.; Wemans, A.; Maneira, M.J.P.; Kozanecki, A.; Silva, R.C. da; Alves, E.

    2005-01-01

    Synthetic colourless transparent (0 0 0 1) sapphire crystals were implanted at room temperature with 100 keV europium ions to fluences up to 1 x 10 16 cm -2 . Surface damage is observed at low fluences, as seen by Rutherford backscattering spectrometry under channelling conditions. Optical absorption measurements revealed a variety of structures, most probably related to F-type defects characteristic of implantation damage. Thermal treatments in air or in vacuum up to 1000 deg. C do not produce noticeable changes both in the matrix or the europium profiles. However, the complete recovery of the implantation damage and some redistribution of the europium ions is achieved after annealing at 1300 deg. C in air. Detailed lattice site location studies performed for various axial directions allowed to assess the damage recovery and the incorporation of the Eu ions into well defined crystallographic sites, possibly in an oxide phase also inferred from optical absorption measurements

  5. A combined optical, SEM and STM study of growth spirals on the polytypic cadmium iodide crystals

    Science.gov (United States)

    Singh, Rajendra; Samanta, S. B.; Narlikar, A. V.; Trigunayat, G. C.

    2000-05-01

    Some novel results of a combined sequential study of growth spirals on the basal surface of the richly polytypic CdI 2 crystals by optical microscopy, scanning electron microscopy (SEM) and scanning tunneling microscopy (STM) are presented and discussed. Under the high resolution and magnification achieved in the scanning electron microscope, the growth steps of large heights seen in the optical micrographs are found to have a large number of additional steps of smaller heights existing between any two adjacent large height growth steps. When further seen by a scanning tunneling microscope, which provides still higher resolution, sequences of unit substeps, each of height equal to the unit cell height of the underlying polytype, are revealed to exist on the surface. Several large steps also lie between the unit steps, with heights equal to an integral multiple of either the unit cell height of the underlying polytype or the thickness of a molecular sheet I-Cd-I. It is suggested that initially a giant screw dislocation may form by brittle fracture of the crystal platelet, which may gradually decompose into numerous unit dislocations during subsequent crystal growth.

  6. Nucleation and Crystal Growth of Organic-Inorganic Lead Halide Perovskites under Different Relative Humidity.

    Science.gov (United States)

    Gao, Hao; Bao, Chunxiong; Li, Faming; Yu, Tao; Yang, Jie; Zhu, Weidong; Zhou, Xiaoxin; Fu, Gao; Zou, Zhigang

    2015-05-06

    Organic-inorganic lead halide perovskite compounds are very promising materials for high-efficiency perovskite solar cells. But how to fabricate high-quality perovksite films under controlled humidity conditions is still an important issue due to their sensitivity to moisture. In this study, we investigated the influence of ambient humidity on crystallization and surface morphology of one-step spin-coated perovskite films, as well as the performance of solar cells based on these perovskite films. On the basis of experimental analyses and thin film growth theory, we conclude that the influence of ambient humidity on nucleation at spin-coating stage is quite different from that on crystal growth at annealing stage. At the spin-coating stage, high nucleation density induced by high supersaturation prefers to appear under anhydrous circumstances, resulting in layer growth and high coverage of perovskite films. But at the annealing stage, the modest supersaturation benefits formation of perovskite films with good crystallinity. The films spin-coated under low relative humidity (RH) followed by annealing under high RH show an increase of crystallinity and improved performance of devices. Therefore, a mechanism of fast nucleation followed by modest crystal growth (high supersaturation at spin-coating stage and modest supersaturation at annealing stage) is suggested in the formation of high-quality perovskite films.

  7. Dynamic light scattering study of inhibition of nucleation and growth of hydroxyapatite crystals by osteopontin.

    Directory of Open Access Journals (Sweden)

    John R de Bruyn

    Full Text Available We study the effect of isoforms of osteopontin (OPN on the nucleation and growth of crystals from a supersaturated solution of calcium and phosphate ions. Dynamic light scattering is used to monitor the size of the precipitating particles and to provide information about their concentration. At the ion concentrations studied, immediate precipitation was observed in control experiments with no osteopontin in the solution, and the size of the precipitating particles increased steadily with time. The precipitate was identified as hydroxyapatite by X-ray diffraction. Addition of native osteopontin (nOPN extracted from rat bone caused a delay in the onset of precipitation and reduced the number of particles that formed, but the few particles that did form grew to a larger size than in the absence of the protein. Recombinant osteopontin (rOPN, which lacks phosphorylation, caused no delay in initial calcium phosphate precipitation but severely slowed crystal growth, suggesting that rOPN inhibits growth but not nucleation. rOPN treated with protein kinase CK2 to phosphorylate the molecule (p-rOPN produced an effect similar to that of nOPN, but at higher protein concentrations and to a lesser extent. These results suggest that phosphorylations are critical to OPN's ability to inhibit nucleation, whereas the growth of the hydroxyapatite crystals is effectively controlled by the highly acidic OPN polypeptide. This work also demonstrates that dynamic light scattering can be a powerful tool for delineating the mechanism of protein modulation of mineral formation.

  8. Dynamic Light Scattering Study of Inhibition of Nucleation and Growth of Hydroxyapatite Crystals by Osteopontin

    Science.gov (United States)

    de Bruyn, John R.; Goiko, Maria; Mozaffari, Maryam; Bator, Daniel; Dauphinee, Ron L.; Liao, Yinyin; Flemming, Roberta L.; Bramble, Michael S.; Hunter, Graeme K.; Goldberg, Harvey A.

    2013-01-01

    We study the effect of isoforms of osteopontin (OPN) on the nucleation and growth of crystals from a supersaturated solution of calcium and phosphate ions. Dynamic light scattering is used to monitor the size of the precipitating particles and to provide information about their concentration. At the ion concentrations studied, immediate precipitation was observed in control experiments with no osteopontin in the solution, and the size of the precipitating particles increased steadily with time. The precipitate was identified as hydroxyapatite by X-ray diffraction. Addition of native osteopontin (nOPN) extracted from rat bone caused a delay in the onset of precipitation and reduced the number of particles that formed, but the few particles that did form grew to a larger size than in the absence of the protein. Recombinant osteopontin (rOPN), which lacks phosphorylation, caused no delay in initial calcium phosphate precipitation but severely slowed crystal growth, suggesting that rOPN inhibits growth but not nucleation. rOPN treated with protein kinase CK2 to phosphorylate the molecule (p-rOPN) produced an effect similar to that of nOPN, but at higher protein concentrations and to a lesser extent. These results suggest that phosphorylations are critical to OPN’s ability to inhibit nucleation, whereas the growth of the hydroxyapatite crystals is effectively controlled by the highly acidic OPN polypeptide. This work also demonstrates that dynamic light scattering can be a powerful tool for delineating the mechanism of protein modulation of mineral formation. PMID:23457612

  9. Distributions of crystals and gas bubbles in reservoir ice during growth period

    Directory of Open Access Journals (Sweden)

    Zhi-jun Li

    2011-06-01

    Full Text Available In order to understand the dominant factors of the physical properties of ice in ice thermodynamics and mechanics, in-situ observations of ice growth and decay processes were carried out. Two samplings were conducted in the fast and steady ice growth stages. Ice pieces were used to observe ice crystals and gas bubbles in ice, and to measure the ice density. Vertical profiles of the type and size of ice crystals, shape and size of gas bubbles, and gas bubble content, as well as the ice density, were obtained. The results show that the upper layer of the ice pieces is granular ice and the lower layer is columnar ice; the average crystal size increases with the ice depth and remains steady in the fast and steady ice growth stages; the shape of gas bubbles in the upper layer of ice pieces is spherical with higher total content, and the shape in the middle and lower layers is cylinder with lower total content; the gas bubble size and content vary with the ice growth stage; and the ice density decreases with the increase of the gas bubble content.

  10. Face-selective crystal growth behavior of L-aspartic acid in the presence of L-asparagine

    Science.gov (United States)

    Sato, Hiroyasu; Doki, Norihito; Yoshida, Saki; Yokota, Masaaki; Shimizu, Kenji

    2016-02-01

    The kinetic mechanism of L-asparagine (L-Asn) action on L-aspartic acid (L-Asp) crystal growth, namely the face-selective effect of L-Asn on the L-Asp crystal growth rate in each direction, was examined. In the a-axis direction, the effect of L-Asn on the L-Asp crystal growth rate was small. Enhancement and inhibition of L-Asp crystal growth, and interestingly the dissolution of the L-Asp crystal face, were observed in the b-axis direction, depending on the amount of L-Asn added. In the c-axis direction, the L-Asp crystal growth rate decreased with the increase in the amount of L-Asn added, and the experimental results were well fitted with a Langmuir adsorption isotherm. The study showed that there were crystal growth conditions where enhancement and inhibition, as well as inhibition and dissolution, coexisted in the presence of an additive with a structure similar to the growing crystal.

  11. Using a novel spectroscopic reflectometer to optimize a radiation-hardened submicron silicon-on-sapphire CMOS process

    International Nuclear Information System (INIS)

    Do, N.T.; Zawaideh, E.; Vu, T.Q.; Warren, G.; Mead, D.; Do, N.T.; Li, G.P.; Tsai, C.S.

    1999-01-01

    A radiation-hardened sub-micron silicon-on-sapphire CMOS process is monitored and optimized using a novel optical technique based on spectroscopic reflectometry. Quantitative measurements of the crystal quality, surface roughness, and device radiation hardness show excellent correlation between this technique and the Atomic Force Microscopy. (authors)

  12. Controllable laser thermal cleavage of sapphire wafers

    Science.gov (United States)

    Xu, Jiayu; Hu, Hong; Zhuang, Changhui; Ma, Guodong; Han, Junlong; Lei, Yulin

    2018-03-01

    Laser processing of substrates for light-emitting diodes (LEDs) offers advantages over other processing techniques and is therefore an active research area in both industrial and academic sectors. The processing of sapphire wafers is problematic because sapphire is a hard and brittle material. Semiconductor laser scribing processing suffers certain disadvantages that have yet to be overcome, thereby necessitating further investigation. In this work, a platform for controllable laser thermal cleavage was constructed. A sapphire LED wafer was modeled using the finite element method to simulate the thermal and stress distributions under different conditions. A guide groove cut by laser ablation before the cleavage process was observed to guide the crack extension and avoid deviation. The surface and cross section of sapphire wafers processed using controllable laser thermal cleavage were characterized by scanning electron microscopy and optical microscopy, and their morphology was compared to that of wafers processed using stealth dicing. The differences in luminous efficiency between substrates prepared using these two processing methods are explained.

  13. Temperature fluctuations in a LiNbO 3 melt during crystal growth

    Science.gov (United States)

    Suzuki, Tetsuro

    2004-10-01

    Variations in temperature induced by forced convection on the surface of a LiNbO3 melt during crystal growth have been studied. Temperature measurements on the melt surface of single crystals growing (∅ 50 mm) at rotation rates of 15-40 rpm on an RF-heated Czochralski puller has revealed that the melt surface continuously alternates between a steady and unsteady state of flow. This was attributed to the intermittently turbulent flow mode at intermediate rotation rates. The fluctuation period is thought to depend on the thickness of its boundary layer. The boundary layer varies in thickness due to the melt flow, which stops as the interface moves toward the crystal and resumes once the interface reverts to its former position. By contrast, at above 60 rpm, the melt surface temperature drops without fluctuation, indicating that turbulent flow is dominant at faster rotation rates.

  14. The growth, spectral and thermal properties of the coordination compound crystal-strontium malate

    International Nuclear Information System (INIS)

    Jini, T.; Saban, K.V.; Varghese, G.

    2006-01-01

    Growth of single crystals of the title compound Sr(C 4 H 4 O 5 ).3H 2 O is achieved using the gel diffusion technique. Multifaceted single crystals of size up to 4x3x3 mm 3 are obtained. X-Ray Diffraction (XRD) pattern of the grown crystal and the Fourier Transform Infra-Red (FTIR) spectrum in the range 400-4000 cm -1 are recorded. The vibrational bands corresponding to different functional groups are assigned. Thermal behavior of the material is investigated using Thermo Gravimetry (TG) and Differential Thermal Analysis (DTA). Thermal studies are indicative of a five-stage decomposition scheme. copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim. (orig.)

  15. Crystal growth and structure of KLnP/sub 4/O/sub 12/

    International Nuclear Information System (INIS)

    Guangyan, H.; Shuzhen, L.; Shuying, Y.; Mingyu, C.

    1985-01-01

    Potassium rare earth tetraphosphates KLnP/sub 4/O/sub 12/ are a kind of polyphosphates of rare earths with unique properties and structures. KNdP/sub 4/O/sub 12/ is a high-Nd-concentration laser material with a non-centrosymmetric space group P2, yielding linear and nonlinear optical properties. α-KErP/sub 4/O/sub 12/ might be used as a material for engineering device purpose. KTbP/sub 4/O/sub 12/ can emit strong green fluorescence, it might be a kind of a new crystal material for laser or luminescence. In order to search for new crystal materials and to study the correlations among the composition, structures and the properties of rare earth compounds, the crystal growth of KLnP/sub 4/O/sub 12/ and their structures are studied in this paper

  16. Acousto-optical phonon excitation in cubic piezoelectric slabs and crystal growth orientation effects

    DEFF Research Database (Denmark)

    Willatzen, Morten; Duggen, Lars

    2017-01-01

    In this paper we investigate theoretically the influence of piezoelectric coupling on phonon dispersion relations. Specifically we solve dispersion relations for a fully coupled zinc-blende freestanding quantum well for different orientations of the crystal unit cell. It is shown that the phonon...... mode density in GaAs can change by a factor of approximately 2–3 at qx a = 1 for different crystal-growth directions relative to the slab thickness direction. In particular, it is found that optical and acoustic phonon modes are always piezoelectrically coupled, independent of the crystal...... that the piezoelectric effect leads to a drastically enhanced coupling of acoustic and optical phonon modes and increase in the local phonon density of states near the plasma frequency where the permittivity approaches zero....

  17. Numerical investigation of magnetic field effect on pressure in cylindrical and hemispherical silicon CZ crystal growth

    International Nuclear Information System (INIS)

    Mokhtari, F.; Bouabdallah, A.; Merah, A.; Oualli, H.

    2012-01-01

    The effect of axial magnetic field of different intensities on pressure in silicon Czochralski crystal growth is investigated in cylindrical and hemispherical geometries with rotating crystal and crucible and thermocapillary convection. As one important thermodynamic variable, the pressure is found to be more sensitive than temperature to magnetic field with strong dependence upon the vorticity field. The pressure at the triple point is proposed as a convenient parameter to control the homogeneity of the grown crystal. With a gradual increase of the magnetic field intensity the convection effect can be reduced without thermal fluctuations in the silicon melt. An evaluation of the magnetic interaction parameter critical value corresponding to flow, pressure and temperature homogenization leads to the important result that a relatively low axial magnetic field is required for the spherical system comparatively to the cylindrical one. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Numerical investigation of magnetic field effect on pressure in cylindrical and hemispherical silicon CZ crystal growth

    Energy Technology Data Exchange (ETDEWEB)

    Mokhtari, F. [Universite Mouloud Mammeri de Tizi Ouzou (Algeria); LTSE Laboratory, University of Science and Technology. BP 32 Elalia, Babezzouar, Algiers (Algeria); Bouabdallah, A. [LTSE Laboratory, University of Science and Technology. BP 32 Elalia, Babezzouar, Algiers (Algeria); Merah, A. [LTSE Laboratory, University of Science and Technology. BP 32 Elalia, Babezzouar, Algiers (Algeria); M' hamed Bougara University, Boumerdes (Algeria); Oualli, H. [EMP, Bordj ElBahri, Algiers (Algeria)

    2012-12-15

    The effect of axial magnetic field of different intensities on pressure in silicon Czochralski crystal growth is investigated in cylindrical and hemispherical geometries with rotating crystal and crucible and thermocapillary convection. As one important thermodynamic variable, the pressure is found to be more sensitive than temperature to magnetic field with strong dependence upon the vorticity field. The pressure at the triple point is proposed as a convenient parameter to control the homogeneity of the grown crystal. With a gradual increase of the magnetic field intensity the convection effect can be reduced without thermal fluctuations in the silicon melt. An evaluation of the magnetic interaction parameter critical value corresponding to flow, pressure and temperature homogenization leads to the important result that a relatively low axial magnetic field is required for the spherical system comparatively to the cylindrical one. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Epitaxial Growth of an Organic p-n Heterojunction: C60 on Single-Crystal Pentacene.

    Science.gov (United States)

    Nakayama, Yasuo; Mizuno, Yuta; Hosokai, Takuya; Koganezawa, Tomoyuki; Tsuruta, Ryohei; Hinderhofer, Alexander; Gerlach, Alexander; Broch, Katharina; Belova, Valentina; Frank, Heiko; Yamamoto, Masayuki; Niederhausen, Jens; Glowatzki, Hendrik; Rabe, Jürgen P; Koch, Norbert; Ishii, Hisao; Schreiber, Frank; Ueno, Nobuo

    2016-06-01

    Designing molecular p-n heterojunction structures, i.e., electron donor-acceptor contacts, is one of the central challenges for further development of organic electronic devices. In the present study, a well-defined p-n heterojunction of two representative molecular semiconductors, pentacene and C60, formed on the single-crystal surface of pentacene is precisely investigated in terms of its growth behavior and crystallographic structure. C60 assembles into a (111)-oriented face-centered-cubic crystal structure with a specific epitaxial orientation on the (001) surface of the pentacene single crystal. The present experimental findings provide molecular scale insights into the formation mechanisms of the organic p-n heterojunction through an accurate structural analysis of the single-crystalline molecular contact.

  20. Synthesis, growth, structural, optical, thermal, electrical and mechanical properties of hydrogen bonded organic salt crystal: Triethylammonium-3, 5-dinitrosalicylate

    Science.gov (United States)

    Rajkumar, Madhu; Chandramohan, Angannan

    2017-04-01

    Triethylammonium-3, 5-dinitrosalicylate, an organic salt was synthesized and single crystals grown by slow solvent evaporation solution growth technique using methanol as a solvent. The presence of various functional groups and mode of vibrations has been confirmed by FT-IR spectroscopic technique. The UV-vis-NIR Spectrum was recorded in the range 200-1200 nm to find optical transmittance window and lower cut off wavelength of the title crystal. The formation of the salt and the molecular structure was confirmed by NMR spectroscopic technique. Crystal system, crystalline nature, cell parameters and hydrogen bonding interactions of the grown crystal were determined by single crystal x-ray diffraction analysis. The thermal characteristics of grown crystal were analyzed by thermo gravimetric and differential thermal analyses. Dielectric studies were carried out to study the distribution of charges within the crystal. The mechanical properties of the title crystal were studied by Vicker's microhardness technique.

  1. Crystal growth and characterization of Tm doped mixed rare-earth aluminum perovskite

    Energy Technology Data Exchange (ETDEWEB)

    Totsuka, Daisuke, E-mail: totsuka@imr.tohoku.ac.jp [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Nihon Kessho Kogaku Co., Ltd., 810-5 Nobe-cho, Tatebayashi, Gunma 374-0047 (Japan); Yanagida, Takayuki [New Industry Creation Hatchery Center (NICHe), 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan); Sugiyama, Makoto; Fujimoto, Yutaka; Yokota, Yuui [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yoshikawa, Akira [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe), 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan)

    2012-04-15

    Highlights: Black-Right-Pointing-Pointer (Lu{sub x}Gd{sub y}Y{sub 0.99-x-y}Tm{sub 0.01})AP single crystals were grown by the {mu}-PD method. Black-Right-Pointing-Pointer The grown crystals were single phase with perovskite structure (Pbnm). Significant segregation of Lu and Gd was detected in the growth direction. Black-Right-Pointing-Pointer Some absorption bands due to Tm{sup 3+}, Gd{sup 3+} and color centers were exhibited. Black-Right-Pointing-Pointer Radioluminescence spectra showed several emission peaks ascribed to Tm{sup 3+} and Gd{sup 3+}. -- Abstract: In this work, we present results of structural characterization and optical properties including radio luminescence of (Lu{sub x}Gd{sub y}Y{sub 0.99-x-y}Tm{sub 0.01})AP single crystal scintillators for (x, y) = (0.30, 0.19), (0, 0.19) and (0, 0) grown by the micro-pulling-down ({mu}-PD) method. The grown crystals were single phase materials with perovskite structure (Pbnm) as confirmed by XRD and had a good crystallinity. The distribution of the crystal constituents in growth direction was evaluated, and significant segregation of Lu and Gd was detected in (Lu{sub 0.30}Gd{sub 0.19}Y{sub 0.50}Tm{sub 0.01})AP sample. The crystals demonstrated 70% transmittance in visible wavelength range and some absorption bands due to Tm{sup 3+}, Gd{sup 3+} and color centers were exhibited in 190-900 nm. The radioluminescence measurement under X-ray irradiation demonstrated several emission peaks ascribed to 4f-4f transitions of Tm{sup 3+} and Gd{sup 3+}. The ratio of emission intensity in longer wavelength range was increased when Y was replaced by Lu or Gd.

  2. Nucleation and crystal growth behavior of nepheline in simulated high-level waste glasses

    Energy Technology Data Exchange (ETDEWEB)

    Fox, K. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Amoroso, J. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Mcclane, D. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

    2017-09-26

    The Savannah River National Laboratory (SRNL) has been tasked with supporting glass formulation development and process control strategies in key technical areas, relevant to the Department of Energy’s Office of River Protection (DOE-ORP) and related to high-level waste (HLW) vitrification at the Waste Treatment and Immobilization Plant (WTP). Of specific interest is the development of predictive models for crystallization of nepheline (NaAlSiO4) in HLW glasses formulated at high alumina concentrations. This report summarizes recent progress by researchers at SRNL towards developing a predicative tool for quantifying nepheline crystallization in HLW glass canisters using laboratory experiments. In this work, differential scanning calorimetry (DSC) was used to obtain the temperature regions over which nucleation and growth of nepheline occur in three simulated HLW glasses - two glasses representative of WTP projections and one glass representative of the Defense Waste Processing Facility (DWPF) product. The DWPF glass, which has been studied previously, was chosen as a reference composition and for comparison purposes. Complementary quantitative X-ray diffraction (XRD) and optical microscopy confirmed the validity of the methodology to determine nucleation and growth behavior as a function of temperature. The nepheline crystallization growth region was determined to generally extend from ~ 500 to >850 °C, with the maximum growth rates occurring between 600 and 700 °C. For select WTP glass compositions (high Al2O3 and B2O3), the nucleation range extended from ~ 450 to 600 °C, with the maximum nucleation rates occurring at ~ 530 °C. For the DWPF glass composition, the nucleation range extended from ~ 450 to 750 °C with the maximum nucleation rate occurring at ~ 640 °C. The nepheline growth at the peak temperature, as determined by XRD, was between 35 - 75 wt.% /hour. A maximum nepheline growth rate of ~ 0.1 mm/hour at 700 °C was measured for the DWPF

  3. Nucleation and crystal growth behavior of nepheline in simulated high-level waste glasses

    International Nuclear Information System (INIS)

    Fox, K.; Amoroso, J.; Mcclane, D.

    2017-01-01

    The Savannah River National Laboratory (SRNL) has been tasked with supporting glass formulation development and process control strategies in key technical areas, relevant to the Department of Energy's Office of River Protection (DOE-ORP) and related to high-level waste (HLW) vitrification at the Waste Treatment and Immobilization Plant (WTP). Of specific interest is the development of predictive models for crystallization of nepheline (NaAlSiO4) in HLW glasses formulated at high alumina concentrations. This report summarizes recent progress by researchers at SRNL towards developing a predicative tool for quantifying nepheline crystallization in HLW glass canisters using laboratory experiments. In this work, differential scanning calorimetry (DSC) was used to obtain the temperature regions over which nucleation and growth of nepheline occur in three simulated HLW glasses - two glasses representative of WTP projections and one glass representative of the Defense Waste Processing Facility (DWPF) product. The DWPF glass, which has been studied previously, was chosen as a reference composition and for comparison purposes. Complementary quantitative X-ray diffraction (XRD) and optical microscopy confirmed the validity of the methodology to determine nucleation and growth behavior as a function of temperature. The nepheline crystallization growth region was determined to generally extend from ~ 500 to >850 °C, with the maximum growth rates occurring between 600 and 700 °C. For select WTP glass compositions (high Al2O3 and B2O3), the nucleation range extended from ~ 450 to 600 °C, with the maximum nucleation rates occurring at ~ 530 °C. For the DWPF glass composition, the nucleation range extended from ~ 450 to 750 °C with the maximum nucleation rate occurring at ~ 640 °C. The nepheline growth at the peak temperature, as determined by XRD, was between 35 - 75 wt.% /hour. A maximum nepheline growth rate of ~ 0.1 mm/hour at 700 °C was measured for the DWPF

  4. Effect of amaranth dye on the growth and properties of conventional and SR method grown KAP single crystals

    Science.gov (United States)

    Babu Rao, G.; P., Rajesh; Ramasamy, P.

    2018-04-01

    The 0.1 mol% amaranth added KAP single crystals were grown from aqueous solutions by both slow evaporation solution technique and Sankaranarayanan-Ramasamy method. The single crystal having dimension of 45 mm length and 12 mm diameter was grown with growth rate of 1.5 mm/day using SR method. 87 % transmittance is obtained for SR method grown amaranth added KAP single crystal. The high intense luminescence at 661 nm is obtained from amaranth added conventional and SR method grown KAP single crystal. The amaranth added KAP single crystal possesses good mechanical and laser damage threshold stability.

  5. Research Progress and Development of Sapphire Fiber Sensor

    Directory of Open Access Journals (Sweden)

    Guochang ZHAO

    2014-07-01

    Full Text Available Sapphire fiber thermometers have become a new potential option in the field of high-temperature measurements. Recent research progress of sapphire fiber sensors is summarized; operational principles, advantages, disadvantages, and applications of sapphire fiber sensors are introduced. Research has shown that sapphire fiber sensors can be used to accurately measure very high temperatures in harsh environments and has been widely applied in fields such as aviation, metallurgy, the chemical industry, energy, and other high temperature measurement areas. Sapphire optical fiber temperature measurement technology will move toward miniaturization, intelligence following the advances in materials, micro-fabrication and communication technologies.

  6. Neutron reflectivity study of substrate surface chemistry effects on supported phospholipid bilayer formation on (1120) sapphire.

    Energy Technology Data Exchange (ETDEWEB)

    Oleson, Timothy A. [University of Wisconsin, Madison; Sahai, Nita [University of Akron; Wesolowski, David J [ORNL; Dura, Joseph A [ORNL; Majkrzak, Charles F [ORNL; Giuffre, Anthony J. [University of Wisconsin, Madison

    2012-01-01

    Oxide-supported phospholipid bilayers (SPBs) used as biomimetric membranes are significant for a broad range of applications including improvement of biomedical devices and biosensors, and in understanding biomineralization processes and the possible role of mineral surfaces in the evolution of pre-biotic membranes. Continuous-coverage and/or stacjed SPBs retain properties (e.,g. fluidity) more similar to native biological membranes, which is desirable for most applications. Using neutron reflectivity, we examined face coverage and potential stacking of dipalmitoylphosphatidylcholine (DPPC) bilayers on the (1120) face of sapphire (a-Al2O3). Nearly full bilayers were formed at low to neutral pH, when the sapphire surface is positively charged, and at low ionic strength (l=15 mM NaCl). Coverage decreased at higher pH, close to the isoelectric point of sapphire, and also at high I>210mM, or with addition of 2mM Ca2+. The latter two effects are additive, suggesting that Ca2+ mitigates the effect of higher I. These trends agree with previous results for phospholipid adsorption on a-Al2O3 particles determined by adsorption isotherms and on single-crystal (1010) sapphire by atomic force microscopy, suggesting consistency of oxide surface chemistry-dependent effects across experimental techniques.

  7. Vanadium-rich ruby and sapphire within Mogok Gemfield, Myanmar: implications for gem color and genesis

    Science.gov (United States)

    Zaw, Khin; Sutherland, Lin; Yui, Tzen-Fu; Meffre, Sebastien; Thu, Kyaw

    2015-01-01

    Rubies and sapphires are of both scientific and commercial interest. These gemstones are corundum colored by transition elements within the alumina crystal lattice: Cr3+ yields red in ruby and Fe2+, Fe3+, and Ti4+ ionic interactions color sapphires. A minor ion, V3+ induces slate to purple colors and color change in some sapphires, but its role in coloring rubies remains enigmatic. Trace element and oxygen isotope composition provide genetic signatures for natural corundum and assist geographic typing. Here, we show that V can dominate chromophore contents in Mogok ruby suites. This raises implications for their color quality, enhancement treatments, geographic origin, exploration and exploitation and their comparison with rubies elsewhere. Precise LA-ICP-MS analysis of ruby and sapphire from Mogok placer and in situ deposits reveal that V can exceed 5,000 ppm, giving V/Cr, V/Fe and V/Ti ratios up to 26, 78, and 97 respectively. Such values significantly exceed those found elsewhere suggesting a localized geological control on V-rich ruby distribution. Our results demonstrate that detailed geochemical studies of ruby suites reveal that V is a potential ruby tracer, encourage comparisons of V/Cr-variation between ruby suites and widen the scope for geographic typing and genesis of ruby. This will allow more precise comparison of Asian and other ruby fields and assist confirmation of Mogok sources for rubies in historical and contemporary gems and jewelry.

  8. Forced and thermocapillary convection in silicon Czochralski crystal growth in semispherical crucible

    Energy Technology Data Exchange (ETDEWEB)

    Mokhtari, F [Physics Department, Faculty of Science, University of Mouloud Mammeri, Tizi Ouzou (Algeria); Bouabdallah, A; Zizi, M [LTSE Laboratory, University of Science and Technology USTHB. BP 32 Elalia, Babezzouar, Algiers (Algeria); Hanchi, S [UER Mecanique/ E.M.P B.P 17, Bordj El Bahri, Algiers (Algeria); Alemany, A, E-mail: abouab2002@yahoo.f [Laboratoire EPM, CNRS, Grenoble (France)

    2010-03-01

    In order to understand the influence of a semispherical crucible geometry combined with different convection modes as a thermocapillary convection, natural convection and forced convection, induced by crystal rotation, on melt flow pattern in silicon Czochralski crystal growth process, a set of numerical simulations are conducted using Fluent Software. We solve the system of equations of heat and momentum transfer in classical geometry as cylindrical and modified crystal growth process geometry as cylindro-spherical. In addition, we adopt hypothesis adapted to boundary conditions near the interface and calculations are executed to determine temperature, pressure and velocity fields versus Grashof and Reynolds numbers. The analysis of the obtained results led to conclude that there is advantage to modify geometry in comparison with the traditional one. The absence of the stagnation regions of fluid in the hemispherical crucible corner and the possibility to control the melt flow using the crystal rotation enhances the quality of the process comparatively to the cylindrical one. The pressure field is strongly related to the swirl velocity.

  9. Forced and thermocapillary convection in silicon Czochralski crystal growth in semispherical crucible

    International Nuclear Information System (INIS)

    Mokhtari, F; Bouabdallah, A; Zizi, M; Hanchi, S; Alemany, A

    2010-01-01

    In order to understand the influence of a semispherical crucible geometry combined with different convection modes as a thermocapillary convection, natural convection and forced convection, induced by crystal rotation, on melt flow pattern in silicon Czochralski crystal growth process, a set of numerical simulations are conducted using Fluent Software. We solve the system of equations of heat and momentum transfer in classical geometry as cylindrical and modified crystal growth process geometry as cylindro-spherical. In addition, we adopt hypothesis adapted to boundary conditions near the interface and calculations are executed to determine temperature, pressure and velocity fields versus Grashof and Reynolds numbers. The analysis of the obtained results led to conclude that there is advantage to modify geometry in comparison with the traditional one. The absence of the stagnation regions of fluid in the hemispherical crucible corner and the possibility to control the melt flow using the crystal rotation enhances the quality of the process comparatively to the cylindrical one. The pressure field is strongly related to the swirl velocity.

  10. Numerical investigation of flows in Czochralski crystal growth by an axisymmetric lattice Boltzmann method

    Science.gov (United States)

    Peng, Y.; Shu, C.; Chew, Y. T.; Qiu, J.

    2003-03-01

    An alternative new method called lattice Boltzmann method (LBM) is applied in this work to simulate the flows in Czochralski crystal growth, which is one of the widely used prototypical systems for melt-crystal growth. The standard LBM can only be used in Cartesian coordinate system and we extend it to be applicable to this axisymmetric thermal flow problem, avoiding the use of three-dimensional LBM on Cartesian coordinate system. The extension is based on the following idea. By inserting position and time dependent source terms into the evolution equation of standard LBM, the continuity and NS equations on the cylindrical coordinate system [1] can be recovered. Our extension is validated by its application to the benchmark problem suggested by Wheeler [2].

  11. Numerical investigation of flows in Czochralski crystal growth by an axisymmetric lattice Boltzmann method

    International Nuclear Information System (INIS)

    Peng, Y.; Shu, C.; Chew, Y.T.; Qiu, J.

    2003-01-01

    An alternative new method called lattice Boltzmann method (LBM) is applied in this work to simulate the flows in Czochralski crystal growth, which is one of the widely used prototypical systems for melt-crystal growth. The standard LBM can only be used in Cartesian coordinate system and we extend it to be applicable to this axisymmetric thermal flow problem, avoiding the use of three-dimensional LBM on Cartesian coordinate system. The extension is based on the following idea. By inserting position and time dependent source terms into the evolution equation of standard LBM, the continuity and NS equations on the cylindrical coordinate system can be recovered. Our extension is validated by its application to the benchmark problem suggested by Wheeler

  12. Numerical investigation of flows in Czochralski crystal growth by an axisymmetric lattice Boltzmann method

    CERN Document Server

    Peng, Y; Chew, Y T; Qiu, J

    2003-01-01

    An alternative new method called lattice Boltzmann method (LBM) is applied in this work to simulate the flows in Czochralski crystal growth, which is one of the widely used prototypical systems for melt-crystal growth. The standard LBM can only be used in Cartesian coordinate system and we extend it to be applicable to this axisymmetric thermal flow problem, avoiding the use of three-dimensional LBM on Cartesian coordinate system. The extension is based on the following idea. By inserting position and time dependent source terms into the evolution equation of standard LBM, the continuity and NS equations on the cylindrical coordinate system can be recovered. Our extension is validated by its application to the benchmark problem suggested by Wheeler .

  13. Identification of a macromolecular crystal growth inhibitor in human urine as osteopontin

    DEFF Research Database (Denmark)

    Sørensen, Steen; Justesen, S J; Johnsen, A H

    1995-01-01

    , an unidentified protein rich in uronic acid, and uropontin have all been described as possessing such activity. We have recently isolated an unknown inhibitor of calcium oxalate crystal growth that co-eluted with trypsin inhibitor in several separation steps, which suggested its identity. The aim of the present......Macromolecules occurring in human urine inhibit the growth and/or aggregation of calcium oxalate crystals and may prevent the formation of kidney stones. Attention has focused particularly on proteins, as these seem to be most responsible for the inhibitory activity; three proteins, nephrocalcin...... study was to outline a simple procedure for isolating and identifying this inhibitor. Purification was done as follows: precipitation of the major proteins (albumin and uromucoid) with trichloroacetic acid, followed by anion exchange chromatography, hydroxyapatite chromatography, anion exchange...

  14. Combined effects of crucible geometry and Marangoni convection on silicon Czochralski crystal growth

    Energy Technology Data Exchange (ETDEWEB)

    Mokhtari, F. [Unit of Developpement of Silicon Technologie, Algiers (Algeria); Bouabdallah, A.; Zizi, M. [LTSE Laboratory, University of Science and Technology USTHB., Babezzouar, Algiers (Algeria); Hanchi, S. [UER Mecanique/ E.M.P/ B.P, El Bahri/Alger (Algeria); Alemany, A. [Laboratoire EPM, CNRS, Grenoble (France)

    2009-08-15

    In order to understand the influence of crucible geometry combined with natural convection and Marangoni convection on melt flow pattern, temperature and pressure fields in silicon Czochralski crystal growth process, a set of numerical simulations was conducted. We carry out calculation enable us to determine temperature, pressure and velocity fields in function of Grashof and Marangoni numbers. The essential results show that the hemispherical geometry of crucible seems to be adapted for the growth of a good quality crystal and the pressure field is strongly affected by natural and Marangoni convection and it is more sensitive than temperature. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Methods for growth of relatively large step-free SiC crystal surfaces

    Science.gov (United States)

    Neudeck, Philip G. (Inventor); Powell, J. Anthony (Inventor)

    2002-01-01

    A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of extended defects in the seed crystal substrate that limited the obtainable step-free area achievable by prior art processes. The step-free SiC surface is particularly suited for the heteroepitaxial growth of 3C (cubic) SiC, AlN, and GaN films used for the fabrication of both surface-sensitive devices (i.e., surface channel field effect transistors such as HEMT's and MOSFET's) as well as high-electric field devices (pn diodes and other solid-state power switching devices) that are sensitive to extended crystal defects.

  16. Synthesis, growth, morphology and characterization of ferroelectric glycine phosphite single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Devi, K. Renuka; Srinivasan, K. [Crystal Growth Laboratory, Department of Physics, School of Physical Sciences, Bharathiar University, Tamil Nadu (India)

    2011-12-15

    Glycine phosphite (NH{sub 3}CH{sub 2}COO.H{sub 3}PO{sub 3}), a potential ferroelectric material, was grown as single crystals from aqueous solutions by slow evaporation and slow cooling methods. Laboratory synthesized title compound was purified by recrystallization method and confirmed by Fourier transform infrared and Laser Raman studies. Temperature dependent solubility in double distilled water in the range between 288 and 328 K was determined by gravimetric method. Morphological importance of various growth faces were studied by optical goniometry. Powder x-ray diffraction study performed on the grown crystals confirms the crystal system and lattice parameters of the unit cell. Optical transparency of the grown crystals in the ultraviolet-visible -near infrared region was studied by spectroscopic method. Thermal stability of the grown crystals in the temperature region above ambient until melting was studied using differential scanning calorimetry. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Growth, spectral, dielectric and antimicrobial studies on 4-piperidinium carboxylamide picrate crystals

    Science.gov (United States)

    Dhanabal, T.; Tharanitharan, V.; Amirthaganesan, G.; Dhandapani, M.

    2014-07-01

    Single crystal of 4-piperidinium carboxylamide picrate was grown by slow evaporation solution growth technique at ambient temperature. The average dimensions of grown crystal were 0.7 × 0.3 × 0.2 cm3. The solubility of the compound was analyzed using methanol and acetone. Optical property of the compound was ascertained by UV-visible absorption spectral study. The sharp and well defined Bragg peaks observed in the powder X-ray diffraction pattern confirm its crystallinity. The different kinds of protons and carbons in the compound were confirmed by 1H and 13C NMR spectral analyses. The presence of various functional groups in the compound was assigned through polarized Raman spectral study. The mechanical property of the crystal was measured by Vicker's microhardness test and the compound was found to be soft material. The dielectric constant and dielectric loss of the crystal decrease with increase in frequency. The antibacterial and antifungal activities of the crystal were studied by disc diffusion method and found that the compound shows good inhibition efficiency against various bacteria and fungi species.

  18. Compositions of melts for growth of functional single crystals of complex oxides and other compounds

    Science.gov (United States)

    Soboleva, L. V.

    2008-12-01

    The melt compositions ( M c) are calculated for growing crystals with valuable physical properties. The calculation is based on the compositions of the invariant points of the liquidus curves for 33 congruently and 12 incongruently melting solid phases of 42 fusibility diagrams of binary systems. These systems include Na, Ca, Ba, Mg, and Y aluminates; Bi and Pb germanates; Li, K, Ba, and Bi borates; Ba, Fe, Sr, and Bi titanates; Li, K, Cs, Ba, Zn, Ca niobates; Li, Pb, and Gd molibdates; Pb and Nd tungstates; etc. More than 60 studies with data on the experimentally found melt compositions ( M e) for growing the noted crystals are analyzed. It is shown that the melt compositions M c and M e for growth of congruently and incongruently melting crystals are similar. Large-size stoichiometric crystals of high optical quality are grown using these melt compositions. Nonstoichiometric crystals of low structural quality are grown from melt compositions either corresponding to the stoichiometric ratio of the components ( M s) or similar to the compositions at invariant points ( M i). In these cases, a large difference is observed between the melt compositions M c, M s, and M e.

  19. Growth, structural and magnetic characterization of Al-substituted barium hexaferrite single crystals

    International Nuclear Information System (INIS)

    Vinnik, D.A.; Zherebtsov, D.A.; Mashkovtseva, L.S.; Nemrava, S.; Bischoff, M.; Perov, N.S.; Semisalova, A.S.; Krivtsov, I.V.; Isaenko, L.I.; Mikhailov, G.G.; Niewa, R.

    2014-01-01

    Highlights: • Growth of large Al-substituted crystals BaFe 12−x Al x O 19. • Al-content controllable by flux composition. • Crystallographic site preference of Al unraveled. • Magnetic characterization depending on Al-content. - Abstract: Large single crystals of aluminum-substituted M-type barium hexaferrite BaFe 12−x Al x O 19 were obtained from carbonate flux. The Al content in the crystals can be controlled via the Al content of the flux up to x = 1.1 according to single crystal X-ray structure refinements. Al shows a distinct preference to substitute Fe on crystallographic sites with high coordination numbers by oxygen atoms, whereas no significant amounts of Al can be found on a tetrahedrally coordinated site. An increasing amount of the aluminum dopant results in a monotonous reduction of the Curie temperature from 440 to 415 °C and the saturation magnetization at room temperature from 68 to 57 emu/g for single crystal and from 61 to 53 emu/g for powder samples

  20. Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire—I. Microstructural characterization

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sung Bo, E-mail: bolee@snu.ac.kr; Han, Heung Nam, E-mail: hnhan@snu.ac.kr; Lee, Dong Nyung [Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744 (Korea, Republic of); Ju, Jin-Woo [Korea Photonics Technology Institute, Gwangju 500-779 (Korea, Republic of); Kim, Young-Min; Yoo, Seung Jo; Kim, Jin-Gyu [Korea Basic Science Institute, Daejeon 305-806 (Korea, Republic of)

    2015-07-15

    Much research has been done to reduce dislocation densities for the growth of GaN on sapphire, but has paid little attention to the elastic behavior at the GaN/sapphire interface. In this study, we have examined effects of the addition of Si to a sapphire substrate on its elastic property and on the growth of GaN deposit. Si atoms are added to a c-plane sapphire substrate by ion implantation. The ion implantation results in scratches on the surface, and concomitantly, inhomogeneous distribution of Si. The scratch regions contain a higher concentration of Si than other regions of the sapphire substrate surface, high-temperature GaN being poorly grown there. However, high-temperature GaN is normally grown in the other regions. The GaN overlayer in the normally-grown regions is observed to have a lower TD density than the deposit on the bare sapphire substrate (with no Si accommodated). As compared with the film on an untreated, bare sapphire, the cathodoluminescence defect density decreases by 60 % for the GaN layer normally deposited on the Si-ion implanted sapphire. As confirmed by a strain mapping technique by transmission electron microscopy (geometric phase analysis), the addition of Si in the normally deposited regions forms a surface layer in the sapphire elastically more compliant than the GaN overlayer. The results suggest that the layer can largely absorb the misfit strain at the interface, which produces the overlayer with a lower defect density. Our results highlight a direct correlation between threading-dislocation density in GaN deposits and the elastic behavior at the GaN/sapphire interface, opening up a new pathway to reduce threading-dislocation density in GaN deposits.

  1. Crystal Nucleation and Crystal Growth and Mass Transfer in Internally Mixed Sucrose/NaNO3 Particles.

    Science.gov (United States)

    Ji, Zhi-Ru; Zhang, Yun; Pang, Shu-Feng; Zhang, Yun-Hong

    2017-10-19

    Secondary organic aerosols (SOA) can exist in a glassy or semisolid state under low relative humidity (RH) conditions, in which the particles show nonequilibrium kinetic characteristics with changing ambient RH. Here, we selected internally mixed sucrose/NaNO 3 droplets with organic to inorganic molar ratios (OIRs) of 1:8, 1:4, 1:2, and 1:1 as a proxy for multicomponent ambient aerosols to study crystal nucleation and growth processes and water transport under a highly viscous state with the combination of an RH-controlling system and a vacuum Fourier transform infrared (FTIR) spectrometer. The initial efflorescence RH (ERH) of NaNO 3 decreased from ∼45% for pure NaNO 3 droplets to ∼38.6 and ∼37.9% for the 1:8 and 1:4 sucrose/NaNO 3 droplets, respectively, while no crystallization of NaNO 3 occurred for the 1:2 and 1:1 droplets in the whole RH range. Thus, the addition of sucrose delayed the ERH and even completely inhibited nucleation of NaNO 3 in the mixed droplets. In addition, the crystal growth of NaNO 3 was suppressed in the 1:4 and 1:8 droplets most likely due to the slow diffusion of Na + and NO 3 - ions at low RH. Water uptake/release of sucrose/NaNO 3 particles quickly arrived at equilibrium at high RH, while the hygroscopic process was kinetically controlled under low RH. The half-time ratio between the liquid water content and the RH was used to describe the mass transfer behavior. For the 1:1 droplets, no mass limitation was observed with the ratio approaching to 1 when the RH was higher than 53%. The ratio increased 1 order of magnitude under an ultraviscous state with RH ranging from 53 to 15% and increased a further 1 order of magnitude at RH < 15% under a glassy state.

  2. Crystal growth and applications of mercuric iodide. Report S-242-TP

    International Nuclear Information System (INIS)

    Schieber, M.; Roth, M.; Schnepple, W.F.

    1983-01-01

    A brief summary is given of a paper which discusses the crystal growth of mercuric iodide, a high-Z wide bandgap semiconductor suitable as a low noise, room temperature x-ray and gamma-ray detector. The paper summarized also reviews the state-of-the-art of the synthesis and purification of the starting material, mechanical properties and dislocation structure of HgI 2 , and recent success in the development of thick HgI 2 spectrometers

  3. Growth of triglicine sulphate single crystals doped by cobalt (II) phosphate

    Czech Academy of Sciences Publication Activity Database

    Prokopová, Lucie; Novotný, Jan; Mička, Z.; Malina, Václav

    2001-01-01

    Roč. 36, č. 11 (2001), s. 1189-1195 ISSN 0232-1300 R&D Projects: GA ČR GA102/99/0364; GA AV ČR KSK1010601 Projekt 7/96/K:4076 Grant - others:GA MSk(CZ) OC P3.160 Institutional research plan: CEZ:AV0Z2067918 Keywords : crystal growth * pyroelectric devices * domains Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.536, year: 2001

  4. Pattern transition between periodic Liesegang pattern and crystal growth regime in reaction-diffusion systems

    Science.gov (United States)

    Lagzi, István; Ueyama, Daishin

    2009-01-01

    The pattern transition between periodic precipitation pattern formation (Liesegang phenomenon) and pure crystal growth regimes is investigated in silver nitrate and potassium dichromate system in mixed agarose-gelatin gel. Morphologically different patterns were found depending on the quality of the gel, and transition between these typical patterns can be controlled by the concentration of gelatin in mixed gel. Effect of temperature and hydrodynamic force on precipitation pattern structure was also investigated.

  5. Synthesis, deposition and crystal growth of CZTS nanoparticles onto ceramic tiles

    Directory of Open Access Journals (Sweden)

    Ivan Calvet

    2015-09-01

    Full Text Available The work presents a simple solvothermal method for CZTS nanoparticles preparation using hexadecylamine (HDA as a capping agent. The as-prepared CZTS powder was deposited as ink using Doctor Blade technique onto ceramic tile, as a substrate substituting the typical soda-lime glass. The as-prepared film was thermal treated at different temperatures in order to enhance the thin film crystallinity. CZTS crystal growth onto ceramic tile was obtained successfully for the first time.

  6. Kinetic study of nucleation and crystal growth during oxalic precipitation in the nuclear industry

    International Nuclear Information System (INIS)

    Andrieu, Murielle

    1999-01-01

    In spite of an extensive use in chemical industry, most of precipitation processes are based on global and empirical knowledge. However, in the recent years, fundamental and phenomenological theories have been developed and they can be used to better understand the mechanisms of precipitation of plutonium IV oxalate, which is a significant stage of the irradiated fuel reprocessing. For this reason, appropriate methods were developed to study nucleation and crystal growth kinetics in a nuclear environment under a wide range of operating conditions. Each phenomena was studied individually in order to reduce the free parameters of the System. This study bears on the oxalates of plutonium and elements which simulate plutonium behaviour during the precipitation, neodymium III and uranium IV. A compact apparatus of a specific construction was used for nucleation measurements in accordance with the Nielsen's method. The state of the mixing was characterised at the reactor scale (macro-mixing) and at molecular scale (micro-mixing). The experimental results for the studied oxalates are in good agreement with the Volmer and Weber's theory. We propose primary nucleation kinetic laws over a wide range of operating conditions (temperature, non-stoichiometric conditions, acidity...). An original method, using a high seed charge, was developed for the determination of crystal growth kinetics, in a batch crystallizer. The crystal growth rate is first order with respect to the supersaturation and the kinetic constant follows an Arrhenius type relation with activation energies of 14, 29 and 36 kJ.mol -1 for respectively neodymium III, uranium IV and plutonium IV oxalates. The overall growth process is surface integration controlled, with a screw dislocation mechanism. [fr

  7. Amelogenin as a promoter of nucleation and crystal growth of apatite

    Science.gov (United States)

    Uskoković, Vuk; Li, Wu; Habelitz, Stefan

    2011-02-01

    Human dental enamel forms over a period of 2-4 years by substituting the enamel matrix, a protein gel mostly composed of a single protein, amelogenin with fibrous apatite nanocrystals. Self-assembly of amelogenin and the products of its selective proteolytic digestion are presumed to direct the growth of apatite fibers and their organization into bundles that eventually comprise the mature enamel, the hardest tissue in the mammalian body. This work aimed to establish the physicochemical and biochemical conditions for the growth of apatite crystals under the control of a recombinant amelogenin matrix (rH174) in combination with a programmable titration system. The growth of apatite substrates was initiated in the presence of self-assembling amelogenin particles. A series of constant titration rate experiments was performed that allowed for a gradual increase of the calcium and/or phosphate concentrations in the protein suspensions. We observed a significant amount of apatite crystals formed on the substrates following the titration of rH174 sols that comprised the initial supersaturation ratio equal to zero. The protein layers adsorbed onto the substrate apatite crystals were shown to act as promoters of nucleation and growth of calcium phosphates subsequently formed on the substrate surface. Nucleation lag time experiments have showed that rH174 tends to accelerate precipitation from metastable calcium phosphate solutions in proportion to its concentration. Despite their mainly hydrophobic nature, amelogenin nanospheres, the size and surface charge properties of which were analyzed using dynamic light scattering, acted as a nucleating agent for the crystallization of apatite. The biomimetic experimental setting applied in this study proves as convenient for gaining insight into the fundamental nature of the process of amelogenesis.

  8. Nucleation kinetics and growth aspects of semi organic non-linear optical bis thiourea cadmium acetate single crystals

    International Nuclear Information System (INIS)

    Sankar, R.; Raghavan, C.M.; Jayavel, R.

    2006-01-01

    Nucleation parameters such as metastable zone width, induction period and interfacial energy have been determined for the aqueous solution growth of bis thiourea cadmium acetate (BTCA) single crystals. Solubility of BTCA has been determined for various temperatures. Metastable zone width and induction period values have been estimated in order to optimize the growth parameters. The interfacial tension values derived from experimentally determined induction period are found to be comparable with theoretical values. Bulk crystals of BTCA have been grown using the optimized growth parameters. The grown crystals have been subjected to structural, optical and mechanical property studies. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Transient from crystallization to fractal growth observed in both boar bile and SnI sub 2 vapour

    CERN Document Server

    Zhang Ji Zhong; Xie An Jian

    2003-01-01

    A visual transient of the growth mechanism from crystallization to fractal growth was observed clearly in a drop of boar bile. The growing crystals were replaced by treelike fractal structures during solidification of the sample. It is fascinating to compare the transient with the result observed in SnI sub 2 vapour. They were completely identical, and revealed that under certain conditions a linear growth could be transferred spontaneously into nonlinear growth. It may be possible to consider the transient as a 'bridge' between linear and nonlinear growth, and to develop a quantitative expression of transient dynamics.

  10. Growth of n-alkane films on a single-crystal substrate

    DEFF Research Database (Denmark)

    Wu, Z. U.; Ehrlich, S. N.; Matthies, B.

    2001-01-01

    The structure and growth mode of alkane films (n-C/sub n/H/sub 2n+2/; n=4, 6, 7) adsorbed on a Ag(111) surface have been investigated by synchrotron X-ray scattering. New models are proposed for the butane (n=4) and hexane (n=6) monolayer and butane bilayer structures. Specular reflectivity scans...... reveal that growth of all films is preempted between two and three layers by nucleation of bulk particles oriented with a single bulk crystal plane parallel to the film. In the case of butane, the bulk particles also have a fixed azimuthal relationship with the film resulting in complete epitaxy....

  11. A new crystal growth form of vaterite, CaCO3

    International Nuclear Information System (INIS)

    Shaikh, A.M.

    1990-01-01

    Microcrystalline vaterite, CaCO 3 , has been synthesized by decomposition of ikaite, CaCO 3 .6H 2 O, crystals at room temperature. Scanning electron micrographs show that vaterite occurs as arborescent aggregates ≅30 to 40 μm in size. This growth form has not been described before. It is of interest that the overall morphology of the vaterite is reminiscent of some dendritic calcite tufas, although on a smaller scale. This similarity opens up the possibility that the calcitic tufas such as that associated with the Quaternary Lake Lahonton, Nevada, may have been deposited as vaterite that changed to calcite, while preserving the original growth form. (orig.)

  12. Optical and dielectric studies of KH2PO4 crystal influenced by organic ligand of citric acid and l-valine: A single crystal growth and comparative study

    Directory of Open Access Journals (Sweden)

    Mohd Anis

    Full Text Available In the present study pure, citric acid (CA and l-valine (LV doped potassium dihydrogen phosphate (KDP crystals have been grown with the aim to investigate the nonlinear optical applications facilitated by UV–visible, third order nonlinear optical (TONLO and dielectric properties. The structural parameters of grown crystals have been confirmed by single crystal X-ray diffraction analysis. The enhancement in optical transparency of KDP crystal due to addition of CA and LV has been examined within 200–900 nm by means of UV–visible spectral analysis. In addition, the transmittance data have been used to evaluate the effect of dopants on reflectance, refractive index and extinction coefficient of grown crystals in the visible region. The Z-scan analysis has been performed at 632.8 nm to identify the nature of photoinduced nonlinear refraction and nonlinear absorption in doped KDP crystals. The influence of π-bonded ligand of dopant CA and LV on TONLO susceptibility (χ3, refractive index (n2 and absorption coefficient (β of KDP crystals has been evaluated to discuss laser assisted device applications. The decrease in dielectric constant and dielectric loss of KDP crystal due to addition of CA and LV has been explored using the temperature dependent dielectric studies. Keywords: Crystal growth, Nonlinear optical materials, UV–visible studies, Z-scan analysis, Dielectric studies

  13. Temperature sensitivity of void nucleation and growth parameters for single crystal copper: a molecular dynamics study

    International Nuclear Information System (INIS)

    Rawat, S; Chavan, V M; Warrier, M; Chaturvedi, S

    2011-01-01

    The effect of temperature on the void nucleation and growth is studied using the molecular dynamics (MD) code LAMMPS (Large-Scale Atomic/Molecular Massively Parallel Simulator). Single crystal copper is triaxially expanded at 5 × 10 9  s −1 strain rate keeping the temperature constant. It is shown that the nucleation and growth of voids at these atomistic scales follows a macroscopic nucleation and growth (NAG) model. As the temperature increases there is a steady decrease in the nucleation and growth thresholds. As the melting point of copper is approached, a double-dip in the pressure–time profile is observed. Analysis of this double-dip shows that the first minimum corresponds to the disappearance of the long-range order due to the creation of stacking faults and the system no longer has a FCC structure. There is no nucleation of voids at this juncture. The second minimum corresponds to the nucleation and incipient growth of voids. We present the sensitivity of NAG parameters to temperature and the analysis of double-dip in the pressure–time profile for single crystal copper at 1250 K

  14. Impurity effect of iron(III) on the growth of potassium sulfate crystal in aqueous solution

    Science.gov (United States)

    Kubota, Noriaki; Katagiri, Ken-ichi; Yokota, Masaaki; Sato, Akira; Yashiro, Hitoshi; Itai, Kazuyoshi

    1999-01-01

    Growth rates of the {1 1 0} faces of a potassium sulfate crystal were measured in a flow cell in the presence of traces of impurity Fe(III) (up to 2 ppm) over the range of pH=2.5-6.0. The growth rate was significantly suppressed by the impurity. The effect became stronger as the impurity concentration was increased and at pH5 it finally disappeared completely. The concentration and supersaturation effects on the impurity action were reasonably explained with a model proposed by Kubota and Mullin [J. Crystal Growth, 152 (1995) 203]. The surface coverage of the active sites by Fe(III) is estimated to increase linearly on increasing its concentration in solution in the range examined by growth experiments. The impurity effectiveness factor is confirmed to increase inversely proportional to the supersaturation as predicted by the model. Apart from the discussion based on the model, the pH effect on the impurity action is qualitatively explained by assuming that the first hydrolysis product of aqua Fe(III) complex compound, [Fe(H 2O) 5(OH)] 2+, is both growth suppression and adsorption active, but the second hydrolysis product, [Fe(H 2O) 4(OH) 2] +, is only adsorption active.

  15. Crystal Growth of Ca3Nb(Ga1−xAlx3Si2O14 Piezoelectric Single Crystals with Various Al Concentrations

    Directory of Open Access Journals (Sweden)

    Yuui Yokota

    2015-08-01

    Full Text Available Ca3Nb(Ga1−xAlx3Si2O14 (CNGAS single crystals with various Al concentrations were grown by a micro-pulling-down (µ-PD method and their crystal structures, chemical compositions, crystallinities were investigated. CNGAS crystals with x = 0.2, 0.4 and 0.6 indicated a single phase of langasite-type structure without any secondary phases. In contrast, the crystals with x = 0.8 and 1 included some secondary phases in addition to the langasite-type phase. Lattice parameters, a- and c-axes lengths, of the langasite-type phase systematically decreased with an increase of Al concentration. The results of chemical composition analysis revealed that the actual Al concentrations in as-grown crystals were almost consistent with the nominal compositions. In addition, there was no large segregation of each cation along the growth direction.

  16. Scanning electron microscope studies of adsorption and crystal growth on tungsten

    International Nuclear Information System (INIS)

    Akhter, P.

    1980-03-01

    An ultra high vacuum scanning electron microscope (UHV-SEM), equipped with additional surface science techniques (AES, RHEED, work function), has been used to study the adsorption and growth of Cs and Ag on polycrystalline and (110) single crystal of W. These are used to study the layer plus island, or Stranski-Krastanov growth mode. The technique and apparatus are described. In the temperature range of 15 0 C, a whole variety of growth phenomena in the system Ag/W(110) has been seen by SEM. Two intermediate layers are followed by island growth, except at T > approximately equal to 500 0 C where island growth starts at a lower coverage. At T 0 C, layer-like growth is deduced from both AES and SEM measurements. The forms, crystallographic orientations and nucleation densities of islands have been explored in detail using a combination of SEM, AES and EBSP techniques. AES results at room temperature and at 500 0 C have been analysed and the results fit very well with SEM observations. A growth model for Ag/W(110) has been presented and atomistic nucleation theory has been extended, to understand the Stranski-Krastanov growth mode in general and the Ag/W(110) results in particular. (author)

  17. Fast and slow crystal growth kinetics in glass-forming melts

    Energy Technology Data Exchange (ETDEWEB)

    Orava, J.; Greer, A. L., E-mail: alg13@cam.ac.uk [WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan and Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

    2014-06-07

    Published values of crystal growth rates are compared for supercooled glass-forming liquids undergoing congruent freezing at a planar crystal-liquid interface. For the purposes of comparison pure metals are considered to be glass-forming systems, using data from molecular-dynamics simulations. For each system, the growth rate has a maximum value U{sub max} at a temperature T{sub max} that lies between the glass-transition temperature T{sub g} and the melting temperature T{sub m}. A classification is suggested, based on the lability (specifically, the propensity for fast crystallization), of the liquid. High-lability systems show “fast” growth characterized by a high U{sub max}, a low T{sub max} / T{sub m}, and a very broad peak in U vs. T / T{sub m}. In contrast, systems showing “slow” growth have a low U{sub max}, a high T{sub max} / T{sub m}, and a sharp peak in U vs. T / T{sub m}. Despite the difference of more than 11 orders of magnitude in U{sub max} seen in pure metals and in silica, the range of glass-forming systems surveyed fit into a common pattern in which the lability increases with lower reduced glass-transition temperature (T{sub g} / T{sub m}) and higher fragility of the liquid. A single parameter, a linear combination of T{sub g} / T{sub m} and fragility, can show a good correlation with U{sub max}. For all the systems, growth at U{sub max} is coupled to the atomic/molecular mobility in the liquid. It is found that, across the diversity of glass-forming systems, T{sub max} / T{sub g} = 1.48 ± 0.15.

  18. crystal

    Science.gov (United States)

    Yu, Yi; Huang, Yisheng; Zhang, Lizhen; Lin, Zhoubin; Sun, Shijia; Wang, Guofu

    2014-07-01

    A Nd3+:Na2La4(WO4)7 crystal with dimensions of ϕ 17 × 30 mm3 was grown by the Czochralski method. The thermal expansion coefficients of Nd3+:Na2La4(WO4)7 crystal are 1.32 × 10-5 K-1 along c-axis and 1.23 × 10-5 K-1 along a-axis, respectively. The spectroscopic characteristics of Nd3+:Na2La4(WO4)7 crystal were investigated. The Judd-Ofelt theory was applied to calculate the spectral parameters. The absorption cross sections at 805 nm are 2.17 × 10-20 cm2 with a full width at half maximum (FWHM) of 15 nm for π-polarization, and 2.29 × 10-20 cm2 with a FWHM of 14 nm for σ-polarization. The emission cross sections are 3.19 × 10-20 cm2 for σ-polarization and 2.67 × 10-20 cm2 for π-polarization at 1,064 nm. The fluorescence quantum efficiency is 67 %. The quasi-cw laser of Nd3+:Na2La4(WO4)7 crystal was performed. The maximum output power is 80 mW. The slope efficiency is 7.12 %. The results suggest Nd3+:Na2La4(WO4)7 crystal as a promising laser crystal fit for laser diode pumping.

  19. Heteroepitaxial silicon film growth at 600 oC from an Al-Si eutectic melt

    International Nuclear Information System (INIS)

    Chaudhari, P.; Shim, Heejae; Wacaser, Brent A.; Reuter, Mark C.; Murray, Conal; Reuter, Kathleen B.; Jordan-Sweet, Jean; Ross, Frances M.; Guha, Supratik

    2010-01-01

    A method for growing heteroepitaxial Si films on sapphire was developed using a 6 nm thin Al layer at substrate temperature of 600 o C. Subsequently, the growth of Si nanowires was demonstrated on these films at 490 o C without breaking vacuum. We characterized the properties of the Si films by Raman scattering, X-ray diffraction and transmission electron microscopy and show that the crystal quality and dopant control are promising for photovoltaic applications.

  20. Study of the growth and pyroelectric properties of TGS crystals doped with aniline-family dipolar molecules

    Science.gov (United States)

    Zhang, Kecong; Song, Jiancheng; Wang, Min; Fang, Changshui; Lu, Mengkai

    1987-04-01

    TGS crystals doped with aniline-family dipolar molecules (aniline, 2-aminobenzoic acid, 3-aminobenzoic acid, 3-aminobenzene-sulphonic acid, 4-aminobenzenesulphonic acid and 4-nitroraniline) have been grown by the slow-cooling solution method. The influence of these dopants on the growth habits, crystal morphology pyroelectric properties, and structure parameters of TGS crystals has been systematically investigated. The effects of the domain structure of the seed crystal on the pyroelectric properties of the doped crystals have been studied. It is found that the spontaneous polarization (P), pyroelectric coefficient (lambda), and internal bias field of the doped crystals are slightly higher than those of the pure TGS, and the larger the dipole moment of the dopant molecule, the higher the P and lambda of the doped TGS crystal.