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Sample records for sapphire crystal growth

  1. The growth of sapphire single crystals

    Directory of Open Access Journals (Sweden)

    STEVAN DJURIC

    2001-06-01

    Full Text Available Sapphire (Al2O3 single crystals were grown by the Czochralski technique both in air and argon atmospheres. The conditions for growing sapphire single crystals were calculated by using a combination of Reynolds and Grashof numbers. Acritical crystal diameter dc = 20 mm and the critical rate of rotation wc = 20 rpm were calculated from the hydrodynamics of the melt. The value of the rate of crystal growth was experimentally found to be 3.5 mm/h. According to our previous experiments, it was confirmed that three hours exposures to conc. H3PO4 at 593 K was suitable for chemical polishing. Also, three hours exposure to conc.H3PO4 at 523 K was found to be a suitable etching solution. The lattice parameters a = 0.47573 nm and c = 1.29893 nm were determined by X-ray powder diffraction. The obtained results are discussed and compared with published data.

  2. A Century of Sapphire Crystal Growth

    Science.gov (United States)

    2004-05-17

    Crystal growth storage cabinet from Frémy’s lab.5,6 Flame Fusion and the Verneuil Process In 1885 rubies selling for $1000-2500...1891: Working with his student, M. Pacquier, Verneuil had developed most of what we now call Verneuil flame-fusion crystal growth . Verneuil ... Verneuil ) Crystal Growth Nassau, Gems Made by Man 11 • 1892: Verneuil eliminated crystal cracking by making contact area between ruby crystal

  3. A peek into the history of sapphire crystal growth

    Science.gov (United States)

    Harris, Daniel C.

    2003-09-01

    After the chemical compositions of sapphire and ruby were unraveled in the middle of the 19th century, chemists set out to grow artificial crystals of these valuable gemstones. In 1885 a dealer in Geneva began to sell ruby that is now believed to have been created by flame fusion. Gemnologists rapidly concluded that the stones were artificial, but the Geneva ruby stimulated A. V. L. Verneuil in Paris to develop a flame fusion process to produce higher quality ruby and sapphire. By 1900 there was brisk demand for ruby manufactured by Verneuil's method, even though Verneuil did not publicly announce his work until 1902 and did not publish details until 1904. The Verneuil process was used with little alteration for the next 50 years. From 1932-1953, S. K. Popov in the Soviet Union established a capability for manufacturing high quality sapphire by the Verneuil process. In the U.S., under government contract, Linde Air Products Co. implemented the Verneuil process for ruby and sapphire when European sources were cut off during World War II. These materials were essential to the war effort for jewel bearings in precision instruments. In the 1960s and 1970s, the Czochralski process was implemented by Linde and its successor, Union Carbide, to make higher crystal quality material for ruby lasers. Stimulated by a government contract for structural fibers in 1966, H. LaBelle invented edge-defined film-fed growth (EFG). The Saphikon company, which is currently owned by Saint-Gobain, evolved from this effort. Independently and simultaneously, Stepanov developed edge-defined film-fed growth in the Soviet Union. In 1967 F. Schmid and D. Viechnicki at the Army Materials Research Lab grew sapphire by the heat exchanger method (HEM). Schmid went on to establish Crystal Systems, Inc. around this technology. Rotem Industries, founded in Israel in 1969, perfected the growth of sapphire hemispheres and near-net-shape domes by gradient solidification. In the U.S., growth of near

  4. Numerical computation of sapphire crystal growth using heat exchanger method

    Science.gov (United States)

    Lu, Chung-Wei; Chen, Jyh-Chen

    2001-05-01

    The finite element software FIDAP is employed to study the temperature and velocity distribution and the interface shape during a large sapphire crystal growth process using a heat exchanger method (HEM). In the present study, the energy input to the crucible by the radiation and convection inside the furnace and the energy output through the heat exchanger is modeled by the convection boundary conditions. The effects of the various growth parameters are studied. It is found that the contact angle is obtuse before the solid-melt interface touches the sidewall of the crucible. Therefore, hot spots always appear in this process. The maximum convexity decreases significantly when the cooling-zone radius (RC) increases. The maximum convexity also decreases significantly as the combined convection coefficient inside the furnace (hI) decreases.

  5. Crystal front shape control by use of an additional heater in a Czochralski sapphire single crystal growth system

    Science.gov (United States)

    Hur, Min-Jae; Han, Xue-Feng; Choi, Ho-Gil; Yi, Kyung-Woo

    2017-09-01

    The quality of sapphire single crystals used as substrates for LED production is largely influenced by two defects: dislocation density and bubbles trapped in the crystal. In particular, the dislocation density has a higher value in sapphire grown by the Czochralski (CZ) method than by other methods. In the present study, we predict a decreased value for the convexity and thermal gradient at the crystal front (CF) through the use of an additional heater in an induction-heated CZ system. In addition, we develop a solute concentration model by which the location of bubble formation in CZ growth is calculated, and the results are compared with experimental results. We further calculate the location of bubble entrapment corresponding with the use of an additional heater. We find that sapphire crystal growth with an additional heater yields a decreased thermal gradient at the CF, together with decreased CF convexity, improved energy efficiency, and improvements in terms of bubble formation location.

  6. Modelling of Verneuil process for the sapphire crystal growth

    Science.gov (United States)

    Barvinschi, Floricica; Santailler, Jean-Louis; Duffar, Thierry; Le Gal, Hervé

    1999-03-01

    The finite element software FIDAP was used to simulate the Verneuil crystal growth process. The turbulent combustion between hydrogen and oxygen, giving water, the hydrodynamics of the gas phase, the inlet and outlet chemical species flow resulting from the combustion and the heat transfer in the furnace (including internal wall-to-wall radiation) are taken into account. A problem with 10 degrees of freedom per node is generated, solved and the results of the axisymmetric model have shown that the coupling of all these phenomena can be achieved in one numerical model. The effects of transparency of the crystal is discussed. A qualitative agreement between some experimental observations and the model is found, so that modelling may be a good tool for studying the Verneuil process. Nevertheless, some improvements of the model in conjunction with other experimental validations appear necessary.

  7. A century of sapphire crystal growth: origin of the EFG method

    Science.gov (United States)

    Harris, Daniel C.

    2009-08-01

    A. Verneuil developed flame fusion to grow sapphire and ruby on a commercial scale around 1890. Flame fusion was further perfected by Popov in the Soviet Union in the 1930s and by Linde Air Products Co. in the U.S. during World War II. Union Carbide Corp., the successor to Linde, developed Czochralski crystal growth for sapphire laser materials in the 1960s. Edge-Defined Film-Fed Growth (EFG) was invented by H. Labelle in the 1960s and the Heat Exchanger Method (HEM) was invented by F. Schmid and D. Viechnicki in 1967. Both methods were commercialized in the 1970s. Gradient solidification was invented in Israel in the 1970s by J. Makovsky. The Horizontal Directional Solidification Method (HDSM) was invented by Kh. S. Bagdasorov in the Soviet Union in the 1960s. Kyropoulos growth of sapphire, known as GOI crystal growth in the Soviet Union, was developed by M. Musatov at the State Optical Institute in St. Petersburg in the 1970s. Today, half of the world's sapphire is produced by the GOI method.

  8. Parametric sensitivity and temporal dynamics of sapphire crystal growth via the micro-pulling-down method

    Science.gov (United States)

    Samanta, Gaurab; Yeckel, Andrew; Bourret-Courchesne, Edith D.; Derby, Jeffrey J.

    2012-11-01

    The micro-pulling-down (μ-PD) crystal growth of sapphire fibers, whose steady-state limits were the focus of our prior study [Samanta et al., Journal of Crystal Growth 335 (2011) 148-159], is further examined using a parametric sensitivity computation derived by linearizing the nonlinear model around a quasi-steady-state (QSS). In addition, transient analyses are performed to assess inherent stability and dynamic responses in this μ-PD system. Information from these two approaches enlarges our understanding of this particular process, and the approaches themselves are put forth as valuable complements to classical QSS analysis.

  9. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    Science.gov (United States)

    Sun, Haiding; Wu, Feng; tahtamouni, T. M. Al; Alfaraj, Nasir; Li, Kuang-Hui; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang

    2017-10-01

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0 0 0 1) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  10. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    KAUST Repository

    Sun, Haiding

    2017-08-08

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  11. Numerical investigation of factors affecting the shape of the crystal-melt interface in edge-defined film-fed growth of sapphire crystals

    Science.gov (United States)

    Stelian, C.; Barthalay, N.; Duffar, T.

    2017-07-01

    Numerical modeling is used to investigate the shape of the crystal-melt interface in edge-defined film-fed growth (EFG) of large size sapphire rods and sheets. The present analysis shows that the temperature distribution in the meniscus is significantly affected by the internal radiative exchanges in the sapphire crystal. 2D axisymmetric computations performed in the case of sapphire rods, show a concave shape of the interface for opaque crystals, and a convex shaped interface for semi-transparent crystals. The temperature gradient across the meniscus increases significantly in the case which accounts for the internal radiative effect in the crystal. Large temperature differences along the free surface of the meniscus generate intense Marangoni flow, which can influence the shape of the growth interface. In this case, the meniscus height increases, producing instabilities in the growth process. The effect of die geometry on the interface shape is analyzed by increasing the angle between the working edges of the die. Computations shows that the interface curvature decreases as this angle increases, but the solidification isotherm moves up, leading to an increased meniscus height. 3D modeling is applied to investigate the EFG growth of large size sapphire sheets. Numerical results show a non-uniform temperature distribution in the meniscus, and a complex 3D flow pattern. However, the intensity of the flow is low in this case, having no influence on the temperature field and interface shape.

  12. Influence of Thermal Conductivity on Interface Shape during Growth of Sapphire Crystal Using a Heat-Exchanger-Method

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    The internal radiative contributed on heat transfer will enhance the heat transport inside the crystalline phase during growth the transparent sapphire crystal using a heat-exchanger-method (HEM). The artificially enhanced thermal conductivity of the solid to include the internal radiation effect was used in the present study. Numerical simulations using FIDAP were performed to investigate the effects of the thermal conductivity on the shape of the melt-crystal interface, the temperature distribution, and the velocity distribution. Heat transfer (including radiation) from the furnace to the crucible and heat extraction from the heat exchanger can be modeled by the convection boundary conditions. In the present study, we focus on the influence of the conductivity on the shape of the melt-crystal interface. Therefore, the effect of the others growth parameters during the HEM crystal growth was neglected. For the homogenous conductivity (km=kS=k), the maximum convexity decreases as k increases and the rate of maximum convexity increases for a higher conductivity is less abrupt than for a lower conductivity. For the no homogenous conductivity (km≠kS), the higher solid's kS generates lower maximum convexity and the variation in maximum convexity was less abrupt for the different melt's km. The maximum convexity decreases slightly as the enhance conductivity of the sapphire crystal increases. The effects of the anisotropic conductivity of the sapphire crystal were also addressed. The maximum convexity of the melt-crystal interface decreases when the radial conductivity (ksr) of the crystal increases. The maximum convexity increases as the axial conductivity (ksz) of the crucible increases.

  13. Neutron Transmission through Sapphire Crystals

    DEFF Research Database (Denmark)

    Sapphire crystals are excellent filters of fast neutrons, while at the same time exhibit moderate to very little absorption at smaller energies. We have performed an extensive series of measurements in order to quantify the above effect. Alongside our experiments, we have performed a series...... of simulations, in order to reproduce the transmission of cold neutrons through sapphire crystals. Those simulations were part of the effort of validating and improving the newly developed interface between the Monte-Carlo neutron transport code MCNP and the Monte Carlo ray-tracing code McStas....

  14. Development of Auto-Seeding System Using Image Processing Technology in the Sapphire Crystal Growth Process via the Kyropoulos Method

    Directory of Open Access Journals (Sweden)

    Churl Min Kim

    2017-04-01

    Full Text Available The Kyropoulos (Ky and Czochralski (Cz methods of crystal growth are used for large-diameter single crystals. The seeding process in these methods must induce initial crystallization by initiating contact between the seed crystals and the surface of the melted material. In the Ky and Cz methods, the seeding process lays the foundation for ingot growth during the entire growth process. When any defect occurs in this process, it is likely to spread to the entire ingot. In this paper, a vision system was constructed for auto seeding and for observing the surface of the melt in the Ky method. An algorithm was developed to detect the time when the internal convection of the melt is stabilized by observing the shape of the spoke pattern on the melt material surface. Then, the vision system and algorithm were applied to the growth furnace, and the possibility of process automation was examined for sapphire growth. To confirm that the convection of the melt was stabilized, the position of the island (i.e., the center of a spoke pattern was detected using the vision system and image processing. When the observed coordinates for the center of the island were compared with the coordinates detected from the image processing algorithm, there was an average error of 1.87 mm (based on an image with 1024 × 768 pixels.

  15. Effect of Shouldering Angle on Distribution of Thermal Stress in Sapphire Single Crystal Growth Using Improved Kyropoulos

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    A two-dimensional model was established in the rectangular co-ordinate to study the thermal stress in the sapphire single crystal grown by the improved Kyropoulos. In the simulation, the distribution, the maximum and minimum values of the thermal stress were calculated. In addition, the relationship between the thermal stress and the shouldering angles was obtained that for lower shouldering angles, the maximum of the thermal stress value is lower and the minimum value is higher. It indicates that the distribution of the thermal stress can be improved by decreasing the shouldering angles of the crystal during the growth process. To evaluate the model, the experiment was carried out and the results are in good agreement with the calculation.

  16. Modeling of dopant segregation in sapphire single crystal fibre growth by Micro-Pulling-Down method

    Science.gov (United States)

    Wenjia, Su; Duffar, Thierry; Nehari, Abdeljelil; Kononets, Valerii; Lebbou, Kheirreddine

    2017-09-01

    Experiments and numerical simulations are conducted in order to study the causes and solutions for the Ti inhomogeneity problem in Ti doped sapphire Micro-Pulling-Down (μ-PD) growth. The measurement and modeling of the thermal and flow fields, electromagnetic field, Ti concentration in the molten zone and along the fibre axis are compared. For the mean Ti concentration along the fibre and temperature along the iridium crucible, the modeling results are consistent with experiments. Results showed that for high pulling rate, the mass transfer in the capillary is dominated by convection. Marangoni convection is strong in the meniscus due to the large temperature gradient, which has great impact on the Ti distribution for different fibre radii. For high pulling rate, Ti concentration increases quickly from the seed along the fibre axis, and reaches a constant value after about 0.5-2 mm. Radial segregation is high for large diameter fibres. The constant Ti concentration along the fibre axis is increasing when increasing the fibre radius from 0.2 to 0.6 mm. For 0.8 mm, it decreases due to the change of the vortex. At low growth rate, the transport in the capillary is diffusive, back to the crucible, which leads to a Scheil-like Ti distribution, in full agreement with the experimental results.

  17. Influence of gas flow on thermal field and stress during growth of sapphire single crystal using Kyropoulos method

    Institute of Scientific and Technical Information of China (English)

    LI Jinquan; SU Xiaoping; NA Mujilatu; YANG Hai; LI Jianmin; YU Yunqi; MI Jianjun

    2006-01-01

    The professional modeling software package CrysVUn was employed to study the process of a large sapphire single crystal growth using Kyropoulos method.The influence of gas pressure on thermal field, solid-liquid interface shape, gas velocity field and von Mises stress were studied for the first time.It is found that the root of the seed melt when gas pressure equals to one atmosphere or more than one atmosphere, especially during the seeding period, this result is consistent with the experimental observation, and this paper presents three ways to solve this problem.The temperature gradient and stress decreases significantly as the gas pressure increases.The convexity of the solid-liquid interface slightly increases when the gas pressure increases.Numerical analysis was used to optimize the hot zone design.

  18. Growth and Crystal Orientation of ZnTe on m-Plane Sapphire with Nanofaceted Structure

    Science.gov (United States)

    Nakasu, Taizo; Sun, Wei-Che; Kobayashi, Masakazu; Asahi, Toshiaki

    2016-11-01

    ZnTe thin films on sapphire substrate with nanofaceted structure have been studied. The nanofaceted structure of the m-plane (10-10) sapphire was obtained by heating the substrate at above 1100°C in air, and the r-plane (10-12) and S-plane (1-101) were confirmed. ZnTe layers were prepared on the nanofaceted m-plane sapphire substrates by molecular beam epitaxy (MBE). The effect of the nanofaceted structure on the orientation of the thin films was examined based on x-ray diffraction (XRD) pole figures. Transmission electron microscopy (TEM) was also employed to characterize the interface structures. The ZnTe layer on the nanofaceted m-plane sapphire substrate exhibited (331)-plane orientation, compared with (211)-plane without the nanofaceted structure. After thermal treatment, the m-plane surface vanished and (211) layer could not be formed because of the lack of surface lattice matching. On the other hand, (331)-plane thin film was formed on the nanofaceted m-plane sapphire substrate, since the (111) ZnTe domains were oriented on the S-facet. The orientation of the ZnTe epilayer depended on the atomic ordering on the surface and the influence of the S-plane.

  19. Growth of ruby and sapphire crystals by the flux method; Crescimento de cristais de rubi e safira pelo metodo do fluxo

    Energy Technology Data Exchange (ETDEWEB)

    Ribeiro, Gislene da Silva [Universidade Federal de Mato Grosso (DRM/UFMT), Cuiaba, MT (Brazil). Dept. de Recuros Minerais; Prado, Rogerio Junqueira, E-mail: rjprado@ufmt.b [Universidade Federal de Mato Grosso (IF/UFMT), Cuiaba, MT (Brazil). Inst. de Fisica

    2010-07-01

    This work reports the growth of corundum crystals by the flux method. The main objective was the evaluation of versatility, effectiveness and real possibilities of the flux method to the synthesis and doping of monocrystals with impurities of particular interest. In this work the chosen impurities were 1) Cr and 2) Fe and Ti, aiming the synthesis of rubies and sapphires, respectively. The crystals were grown by heating a mixture of Al{sub 2}O{sub 3}:Cr or Al{sub 2}O{sub 3}:Fe:Ti and flux (MoO{sub 3}). The maximum crystal size obtained was 1.0 mm, all transparent, presenting well developed faces, bipyramidal hexagonal shape, and showing a typical red (ruby) and/or light blue (sapphire) color. EDX and XPD experiments were performed in order to characterize some of the synthesized crystals. All crystallized specimens presented the a-alumina atomic structure. (author)

  20. Crescimento de cristais de rubi e safira pelo método do fluxo Growth of ruby and sapphire crystals by the flux method

    Directory of Open Access Journals (Sweden)

    Gislene da Silva Ribeiro

    2010-01-01

    Full Text Available This work reports the growth of corundum crystals by the flux method. The main objective was the evaluation of versatility, effectiveness and real possibilities of the flux method to the synthesis and doping of monocrystals with impurities of particular interest. In this work the chosen impurities were i Cr and ii Fe and Ti, aiming the synthesis of rubies and sapphires, respectively. The crystals were grown by heating a mixture of Al2O3:Cr or Al2O3:Fe:Ti and flux (MoO3. The maximum crystal size obtained was 1.0 mm, all transparent, presenting well developed faces, bipiramidal hexagonal shape, and showing a typical red (ruby and/or light blue (sapphire color. EDX and XPD experiments were performed in order to characterize some of the synthesized crystals. All crystallized specimens presented the α-alumina atomic structure.

  1. Blocks and residual stresses in shaped sapphire single crystals

    Science.gov (United States)

    Krymov, V. M.; Nosov, Yu. G.; Bakholdin, S. I.; Maslov, V. N.; Shul‧pina, I. L.; Nikolaev, V. I.

    2017-01-01

    The formation of blocks and residual stresses in shaped sapphire crystals grown from the melt by the Stepanov method (EFG) has been studied. The probability of block formation is higher for the growth along the c axis compared to that grown in the a-axis direction. The distribution of residual stress in sapphire crystals of tubular, rectangular and round cross section was measured by the conoscopy method. It was found that the magnitude of the residual stress increases from the center to the periphery of the crystal and reaches up to about 20 MPa. Residual stress tensor components for solid round rod and tubular single crystals were determined by numerical integration.

  2. Secondary particle emission from sapphire single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Minnebaev, K.F., E-mail: minnebaev@mail.ru [Physics Faculty, Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation); Khvostov, V.V.; Zykova, E.Yu.; Tolpin, K.A. [Physics Faculty, Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation); Colligon, J.S. [Manchester Metropolitan University, Chester Street, Manchester M1 5GD (United Kingdom); Yurasova, V.E. [Physics Faculty, Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation)

    2015-07-01

    Secondary ion emission from sapphire single crystal has been studied experimentally and by means of computer simulation. The particular oscillations of secondary ion energy spectra and two specific maxima of O{sup +} and Al{sup +} ions were observed under irradiation of (0001) sapphire face by 1 and 10 keV Ar{sup +} ions. We have explained this by the interplay of the charge exchange processes between moving particles and solids. The existence of two maxima in energy spectra of O{sup +} and Al{sup +} secondary ions can be also connected with special features of single-crystal sputtering: the low-energy peak can be formed by random sputtering and the high-energy peak from focusing collisions. In addition some similarity was found between the positions of low-energy maximum in energy spectra of Al{sup +} ions emitted from sapphire and the principal maxima of Al{sup +} ions ejected from the aluminum single crystal. This indicates a possibility to explain the presence of low-energy maximum in energy spectra of secondary ions ejecting from sapphire by emission of Al{sup +} ions from aluminum islands appearing in a number of cases on the sapphire surface due to preferential sputtering of oxygen. These different mechanisms of creating the energy spectra of ions emitted from sapphire should be taken in account.

  3. Sapphire: Relation between luminescence of starting materials and luminescence of single crystals

    Science.gov (United States)

    Mogilevsky, R.; Nedilko, S.; Sharafutdinova, L.; Burlay, S.; Sherbatskii, V.; Boyko, V.; Mittl, S.

    2009-10-01

    A relation between photoluminescence (PL) characteristics of different starting materials used for crystal growth and un-doped sapphire single crystals manufactured using various methods of crystal growth (Kyropolus, HEM, Czochralski, and EFG) was found. The crystals grown using the Verneuil starting material exhibited significant PL when any method of crystal growth was used. On the contrary, sapphire samples grown by the same technologies wherein the starting material was EMT HPDA R revealed very low PL. (HPDA R is produced by EMT, Inc., with proprietary and patented technology.)

  4. Influence of the crucible geometry on the shape of the melt crystal interface during growth of sapphire crystal using a heat exchanger method

    Science.gov (United States)

    Chen, Jyh-Chen; Lu, Chung-Wei

    2004-05-01

    Computer simulations using the commercial code FIDAP, which is based on finite element techniques, were performed to investigate the effect of the shape of the crucible on the temperature distribution, velocity distribution and shape of the melt-crystal interface, during the application of the heat exchanger method (HEM) of growing sapphire crystals. Heat transfer from the furnace to the crucible and heat extraction from the heat exchanger can be modeled by the convection boundary conditions. Cylindrical crucibles with differently curved corners at their base are considered. The curved base of the crucible decreases the convexity of the melt-crystal interface and suppresses the appearance of "hot spots". A hemispherically shaped crucible base yields the lowest maximum convexity. The variation in convexity of the melt-crystal interface is less abrupt for a cylindrical crucible with curved corners at the base than one without curved corners. The effects of the thickness and the conductivity of the crucible are also addressed. The convexity of the melt-crystal interface decreases as the thickness of the crucible wall increases. The convexity also declines as the conductivity of the crucible increases.

  5. Dislocation Analysis for Large-sized Sapphire Single Crystal Grown by SAPMAC Method

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    In this paper, large-sized sapphire (Φ230×210 mm, 27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at the cooled center). Dislocation peculiarity in large sapphire boule (0001) basal plane was investigated by chemical etching, scanning electron microscopy and X-ray topography method. The triangular dislocation etch pit measured is 7.6×101~8.0×102 cm-2, in which relative high-density dislocations were generated at both initial and final stages of crystal growth. The analysis of single-crystal X-ray topography shows that there are no apparent sub-grain boundaries; the dislocation lines are isolated and straight. Finally, the origins of low-density dislocation in sapphire crystal are discussed by numerical analysis method.

  6. Evaluation of the Quality of Sapphire Using X-Ray Rocking Curves and Double-Crystal X-Ray Topography

    Science.gov (United States)

    1994-05-01

    hard, high-strength, chemically resistant optical windows; and sub- srates for the growth of epitaxial films. The quality of a sapphire crystal can... crystal diffractometer. Single- crystal sapphire may be grown by a variety of different methods, of which the more common are Verneuil (flame fusion...Linear features (L), which may represent slight variations in lattice parameter along the crystal growth front, or dislocation networks, ad small

  7. Neutron Transmission through Sapphire Crystals: Experiments and Simulations

    OpenAIRE

    Rantsiou, Emmanouela; Filges, Uwe; Panzner, Tobias; Klinkby, Esben Bryndt

    2013-01-01

    Sapphire crystals are excellent filters of fast neutrons, while at the same time exhibit moderate to very little absorption at smaller energies. We have performed an extensive series of measurements in order to quantify the above effect. Alongside our experiments, we have performed a series of simulations, in order to reproduce the transmission of cold neutrons through sapphire crystals. Thosesimulations were part of the effort of validating and improving the newly developed interface between...

  8. Sapphire Multiple Filament and Large Plate Growth Processes

    Science.gov (United States)

    1972-10-01

    for sapphire filaments is scrap white verneuil -grown sapphire boules. These boules are processed here at Tyco to achieve the proper mesh size...entrapped liquid freeze, they shrink, resulting in voids. Raw material for our growth process is provided by use of scap verneuil sapphire boules. In...J ;~ ;t" ,, ,, .. ::~ ,:~~\\i : i .<’\\ :1 ’ r .,l,, .. ’ ... :,J_ ’ ’~~ .. ;~ 1-.. i d;·, AFML-TR -7---190 1;).-- SAPPHIRE MULTIPLE

  9. Thermal Stresses and Cracks During the Growth of Large-sized Sapphire with SAPMAC Method

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The finite-element method has been used to study the thermal stress distribution in large-sized sapphire crystals grown with the sapphire growth technique with micro-pulling and shoulder-expanding at cooled center (SAPMAC) method. A critical defect model has been established to explain the growth and propagation of cracks during the sapphire growing process. It is demonstrated that the stress field depends on the growth rate, the ambient temperature and the crystallizing direction. High stresses always exist near the growth interfaces, at the shoulder-expanding locations, the tailing locations and the sites where the diameters undergo sharp changes. The maximum stresses always occur at the interface of seeds and crystals. Cracks often form in the critical defect region and spread in the m-planes and a-planes under applied tensile stresses during crystal growth. The experimental results have verified that with the improved system of crystal growth and well-controlled techniques, the large-sized sapphire crystals of high quality can be grown due to absence of cracks.

  10. Neurosurgery contact handheld probe based on sapphire shaped crystal

    Science.gov (United States)

    Shikunova, I. A.; Stryukov, D. O.; Rossolenko, S. N.; Kiselev, A. M.; Kurlov, V. N.

    2017-01-01

    A handheld contact probe based on sapphire shaped crystal is developed for intraoperative spectrally-resolved optical diagnostics, laser coagulation and aspiration of malignant brain tissue. The technology was integrated into the neurosurgical workflow for intraoperative real-time identification and removing of invasive brain cancer.

  11. Study on Inclusions in Large Sapphire Optical Crystal Grown by SAPMAC Method

    Institute of Scientific and Technical Information of China (English)

    WANG Gui-gen; ZHANG Ming-fu; ZUO Hong-bo; HE Xiao-dong; HAN Jie-cai

    2006-01-01

    The sapphire (Al2O3) single crystal is a kind of excellent infrared transmission window materials. A large-sized sapphire (Φ225 mm×205 mm, 27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at cooled center). Several kinds of inclusion in the large sapphire crystal were investigated by means of an optical microscopy (OM), scanning electron microscopy (SEM) and electron probe microanalysis (EPMA). The experimental results show that most inclusions are consisted of solid metallic and non-metallic particles as well as gas pores caused by the impurity of alumina as the raw material, the thermal dissociation of aluminum oxide melt and the reaction of the melt to the crucible material (Mo) at high temperatures. It is also found that in different crystal regions the inclusions are of varied sizes, morphology and chemical compositions. Finally, the measures to reduce and eliminate the inclusions are proposed to improve the crystal quality.

  12. Single-Crystal Sapphire Optical Fiber Sensor Instrumentation

    Energy Technology Data Exchange (ETDEWEB)

    Pickrell, Gary [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Scott, Brian [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Wang, Anbo [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States); Yu, Zhihao [Virginia Polytechnic Inst. & State Univ., Blacksburg, VA (United States)

    2013-12-31

    This report summarizes technical progress on the program “Single-Crystal Sapphire Optical Fiber Sensor Instrumentation,” funded by the National Energy Technology Laboratory of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. This project was completed in three phases, each with a separate focus. Phase I of the program, from October 1999 to April 2002, was devoted to development of sensing schema for use in high temperature, harsh environments. Different sensing designs were proposed and tested in the laboratory. Phase II of the program, from April 2002 to April 2009, focused on bringing the sensor technologies, which had already been successfully demonstrated in the laboratory, to a level where the sensors could be deployed in harsh industrial environments and eventually become commercially viable through a series of field tests. Also, a new sensing scheme was developed and tested with numerous advantages over all previous ones in Phase II. Phase III of the program, September 2009 to December 2013, focused on development of the new sensing scheme for field testing in conjunction with materials engineering of the improved sensor packaging lifetimes. In Phase I, three different sensing principles were studied: sapphire air-gap extrinsic Fabry-Perot sensors; intensity-based polarimetric sensors; and broadband polarimetric sensors. Black body radiation tests and corrosion tests were also performed in this phase. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. At the beginning of Phase II, in June 2004, the BPDI sensor was tested at the Wabash River coal gasifier

  13. Low Temperature Rhombohedral Single Crystal SiGe Epitaxy on c-plane Sapphire

    Science.gov (United States)

    Duzik, Adam J.; Choi, Sang H.

    2016-01-01

    Current best practice in epitaxial growth of rhombohedral SiGe onto (0001) sapphire (Al2O3) substrate surfaces requires extreme conditions to grow a single crystal SiGe film. Previous models described the sapphire surface reconstruction as the overriding factor in rhombohedral epitaxy, requiring a high temperature Al-terminated surface for high quality films. Temperatures in the 850-1100 C range were thought to be necessary to get SiGe to form coherent atomic matching between the (111) SiGe plane and the (0001) sapphire surface. Such fabrication conditions are difficult and uneconomical, hindering widespread application. This work proposes an alternative model that considers the bulk sapphire structure and determines how the SiGe film nucleates and grows. Accounting for thermal expansion effects, calculations using this new model show that both pure Ge and SiGe can form single crystal films in the 450-550 C temperature range. Experimental results confirm these predictions, where x-ray diffraction and atomic force microscopy show the films fabricated at low temperature rival the high temperature films in crystallographic and surface quality. Finally, an explanation is provided for why films of comparable high quality can be produced in either temperature range.

  14. SINGLE-CRYSTAL SAPPHIRE OPTICAL FIBER SENSOR INSTRUMENTATION

    Energy Technology Data Exchange (ETDEWEB)

    A. Wang; G. Pickrell; R. May

    2002-09-10

    Accurate measurement of temperature is essential for the safe and efficient operation and control of a wide range of industrial processes. Appropriate techniques and instrumentation are needed depending on the temperature measurement requirements in different industrial processes and working environments. Harsh environments are common in many industrial applications. These harsh environments may involve extreme physical conditions, such as high-temperature, high-pressure, corrosive agents, toxicity, strong electromagnetic interference, and high-energy radiation exposure. Due to these severe environmental conditions, conventional temperature sensors are often difficult to apply. This situation has opened a new but challenging opportunity for the sensor society to provide robust, high-performance, and cost-effective temperature sensors capable of operating in those harsh environments. The focus of this research program has been to develop a temperature measurement system for temperature measurements in the primary and secondary stages of slagging gasifiers. For this application the temperature measurement system must be able to withstand the extremely harsh environment posed by the high temperatures and corrosive agents present in these systems. Real-time, accurate and reliable monitoring of temperature for the coal gasification process is important to realize the full economic potential of these gasification systems. Long life and stability of operation in the high temperature environment is essential for the temperature measurement system to ensure the continuous running of the coal gasification system over the long term. In this high temperature and chemically corrosive environment, rather limited high temperature measurement techniques such as high temperature thermocouples and optical/acoustic pyrometers are available, each with their own limitations. In this research program, five different temperature sensing schemes based on the single crystal sapphire

  15. AlN growth on sapphire substrate by ammonia MBE

    Science.gov (United States)

    Mansurov, V. G.; Nikitin, A. Yu.; Galitsyn, Yu. G.; Svitasheva, S. N.; Zhuravlev, K. S.; Osvath, Z.; Dobos, L.; Horvath, Z. E.; Pecz, B.

    2007-03-01

    Kinetics of (0 0 0 1) Al 2O 3 surface nitridation and subsequent growth of AlN films on the sapphire substrate by ammonia molecular beam epitaxy (MBE) are investigated. Surface morphology evolution during AlN growth is studied in situ by reflection high energy electron diffraction and ex situ by atomic force microscopy. It is found that the surfaces of AlN layers thicker than 100 nm have two major features: a quite smooth background and noticeable amount of hillocks. The influence of growth conditions on the AlN surface morphology is studied in order to find a way for reducing of the hillocks density. A modification of nitridated sapphire surface by small amount of Al (1-2 monolayers) with subsequent treatment of the surface under ammonia flux is proposed. An improvement of AlN surface morphology of the layers grown on the modified surfaces is demonstrated.

  16. Shaped Crystal Growth

    Science.gov (United States)

    Tatartchenko, Vitali A.

    fundamental principles of shaping. Some shaped crystals, especially sapphire and silicon, have specified structures. The crystal growth of these materials, and some metals, including crystal growth in space, is discussed.

  17. Growth of planar semipolar GaN via epitaxial lateral overgrowth on pre-patterned sapphire substrate

    Energy Technology Data Exchange (ETDEWEB)

    Schwaiger, Stephan; Argut, Ilona; Wunderer, Thomas; Lipski, Frank; Roesch, Rudolf; Scholz, Ferdinand [Institute of Optoelectronics, University of Ulm (Germany)

    2010-07-01

    We report on the growth of planar semipolar GaN on pre-patterned sapphire substrates via metalorganic vapor phase epitaxy. The sapphire templates were structured with grooves perpendicular to the c-direction of the crystal. Using appropriate growth parameters semipolar GaN can be grown from the c-plane like sidewall of the patterned sapphire, resulting in a flat and planar semipolar surface. Hence, this method allows the growth of semipolar GaN on large areas. Scanning electron, transmission electron and atomic force microscopy measurements show an atomically flat surface. Photoluminescence spectroscopy spectra show the high quality of the material since the spectra are dominated by the near band edge emission but still exhibit some defect related contributions. Furthermore high resolution X-ray diffraction rocking curve measurements result in small full widths at half maximum of less than 400 arcsec for both, the symmetrical reflection and the asymmetrical (0002) reflection.

  18. Temperature and thermal stress evolutions in sapphire crystal during the cooling process by heat exchanger method

    Science.gov (United States)

    Ma, Wencheng; Zhao, Wenhan; Wu, Ming; Ding, Guoqiang; Liu, Lijun

    2017-09-01

    Transient numerical calculations were carried out to predict the evolutions of temperature and thermal stress in sapphire single crystal during the cooling process by heat exchanger method (HEM). Internal radiation in the semitransparent sapphire crystal was taken into account using the finite volume method (FVM) in the global heat transfer model. The numerical results seem to indicate that the narrow bottom region of the sapphire crystal is subjected to high thermal stress during the cooling process, which could be responsible for the seed cracking of the as-grown crystal, while the thermal stress is relatively small in the central main body of the crystal, and is less than 10 MPa during the whole cooling process. The fast decrease of the thermal stress in the bottom region of the crystal during the initial stage of cooling process is dominated by the reduction of the cooling helium gas in the heat exchanger shaft, and is not significantly affected by the heating power reduction rate.

  19. The effect of crystal orientation on the cryogenic strength of hydroxide catalysis bonded sapphire

    Science.gov (United States)

    Haughian, K.; Douglas, R.; van Veggel, A. A.; Hough, J.; Khalaidovski, A.; Rowan, S.; Suzuki, T.; Yamamoto, K.

    2015-04-01

    Hydroxide catalysis bonding has been used in gravitational wave detectors to precisely and securely join components of quasi-monolithic silica suspensions. Plans to operate future detectors at cryogenic temperatures has created the need for a change in the test mass and suspension material. Mono-crystalline sapphire is one candidate material for use at cryogenic temperatures and is being investigated for use in the KAGRA detector. The crystalline structure of sapphire may influence the properties of the hydroxide catalysis bond formed. Here, results are presented of studies of the potential influence of the crystal orientation of sapphire on the shear strength of the hydroxide catalysis bonds formed between sapphire samples. The strength was tested at approximately 8 K; this is the first measurement of the strength of such bonds between sapphire at such reduced temperatures. Our results suggest that all orientation combinations investigated produce bonds of sufficient strength for use in typical mirror suspension designs, with average strengths >23 MPa.

  20. Supersmooth and modified surface of sapphire crystals: Formation, characterization, and applications in nanotechnologies

    Science.gov (United States)

    Muslimov, A. E.; Asadchikov, V. E.; Butashin, A. V.; Vlasov, V. P.; Deryabin, A. N.; Roshchin, B. S.; Sulyanov, S. N.; Kanevsky, V. M.

    2016-09-01

    The results of studying the state of the surface of sapphire crystals by a complex of methods in different stages of crystal treatment are considered by an example of preparing sapphire substrates with a supersmooth surface. The possibility of purposefully forming regular micro- and nanoreliefs and thin transition layers using thermal and thermochemical impacts are considered. The advantages of sapphire substrates with a modified surface for forming heteroepitaxial CdTe and ZnO semiconductor films and ordered ensembles of gold nanoparticles are described. The results of the experiments on the application of crystalline sapphire as a material for X-ray optical elements are reported. These elements include total external reflection mirrors and substrates for multilayer mirrors, output windows for synchrotron radiation, and monochromators working in the reflection geometry in X-ray spectrometers. In the latter case, the problems of the defect structure of bulk crystals sapphire and the choice of a method for growing sapphire crystals of the highest structural quality are considered.

  1. Growth of single-crystal gallium nitride

    Science.gov (United States)

    Clough, R.; Richman, D.; Tietjen, J.

    1970-01-01

    Use of ultrahigh purity ammonia prevents oxygen contamination of GaN during growth, making it possible to grow the GaN at temperatures as high as 825 degrees C, at which point single crystal wafers are deposited on /0001/-oriented sapphire surfaces.

  2. Intracavity frequency doubling of CW Ti:Sapphire laser utilising BiBO nonlinear crystal

    DEFF Research Database (Denmark)

    Thorhauge, Morten; Mortensen, Jesper Liltorp; Tidemand-Lichtenberg, Peter

    Utilising BiBO nonlinear crystal frequency doubling a Ti:Sapphire CW laser gave 100 mW at 405 nm and 53 mW at 392 nm. Stability proved excellent without servo control. Broad tunability was shown around 392 nm.......Utilising BiBO nonlinear crystal frequency doubling a Ti:Sapphire CW laser gave 100 mW at 405 nm and 53 mW at 392 nm. Stability proved excellent without servo control. Broad tunability was shown around 392 nm....

  3. Hydrogen effect on the properties of sapphire

    Science.gov (United States)

    Mogilevsky, Radion N.; Sharafutdinova, Liudmila G.; Nedilko, Sergiy; Gavrilov, Valeriy; Verbilo, Dmitriy; Mittl, Scott D.

    2009-05-01

    Sapphire is a widely used material for optical, electronic and semiconductor applications due to its excellent optical properties and very high durability. Optical and mechanical properties of sapphire depend on many factors such as the starting materials that are used to grow crystals, methods to grow sapphire crystals, etc. Demand for highest purity and quality of sapphire crystals increased ten fold for the last several years due to new applications for this material. In this work we studied the effect of starting materials and crystal growth methods on the optical and mechanical properties of sapphire, especially concentrating on the effect of hydrogen on the properties of sapphire. It was found that the infrared (IR) absorption which is traditionally used to measure the hydrogen content in sapphire crystals cannot be reliably used and the data obtained by this method provides a much lower hydrogen concentration than actual. We have shown for the first time that Nuclear Magnetic Resonance techniques can be successfully used to determine hydrogen concentration in sapphire crystals. We have shown that hydrogen concentration in sapphire can reach thousands of ppm if these crystals are grown from Verneuil starting material or aluminum oxide powder. Alternatively, the hydrogen concentration is very low if sapphire crystals are grown from High Purity Densified Alumina (HPDA®) as a starting material. HPDA® is produced by EMT, Inc through their proprietary patented technology. It was found that optical and mechanical properties of sapphire crystals grown using EMT HPDA® starting material are much better than those sapphire crystals grown using a starting material of Verneuil crystals or aluminum oxide powder.

  4. MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nakasu, Taizo; Sun, Wei-Che; Yamashita, Sotaro; Aiba, Takayuki; Taguri, Kosuke [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi 317-0056 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atsugi 243-0198 (Japan)

    2014-07-15

    ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2 -tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Compared growth mechanisms of Zn-polar ZnO nanowires on O-polar ZnO and on sapphire.

    Science.gov (United States)

    Perillat-Merceroz, G; Thierry, R; Jouneau, P H; Ferret, P; Feuillet, G

    2012-03-30

    Controlling the growth of zinc oxide nanowires is necessary to optimize the performance of nanowire-based devices such as photovoltaic solar cells, nano-generators, or light-emitting diodes. With this in mind, we investigate the nucleation and growth mechanisms of ZnO nanowires grown by metalorganic vapor phase epitaxy either on O-polar ZnO or on sapphire substrates. Whatever the substrate, ZnO nanowires are Zn-polar, as demonstrated by convergent beam electron diffraction. For growth on O-polar ZnO substrate, the nanowires are found to sit on O-polar pyramids. As growth proceeds, the inversion domain boundary moves up in order to remain at the top of the O-polar pyramids. For growth on sapphire substrates, the nanowires may also originate from the sapphire/ZnO interface. The presence of atomic steps and the non-polar character of sapphire could be the cause of the Zn-polar crystal nucleation on sapphire, whereas it is proposed that the segregation of aluminum impurities could account for the nucleation of inverted domains for growth on O-polar ZnO.

  6. Giant secondary grain growth in Cu films on sapphire

    OpenAIRE

    Miller, David L.; Keller, Mark W.; Shaw, Justin M.; Katherine P. Rice; Keller, Robert R.; Diederichsen, Kyle M.

    2013-01-01

    Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial growth at high temperature using slow deposition in ultrahigh vacuum conditions. Here we describe a different approach that is both simpler to implement and produces superior results: sputter deposition at modest temperatures followed by annealing to induce ...

  7. High energy terahertz pulses from organic crystals: DAST and DSTMS pumped at Ti:sapphire wavelength

    CERN Document Server

    Monoszlai, B; Jazbinsek, M; Hauri, C P

    2013-01-01

    High energy terahertz pulses are produced by optical rectification (OR) in organic crystals DAST and DSTMS by a Ti:sapphire amplifier system centered at 0.8 microns. The simple scheme provides broadband spectra between 1 and 5 THz, when pumped by collimated 60 fs near-infrared pump pulse and it is scalable in energy. Fluence-dependent conversion efficiency and damage threshold are reported as well as optimized OR at visible wavelength.

  8. Growth problems of sapphire and ruby of optical quality.

    Science.gov (United States)

    Reiss, F A

    1966-12-01

    A careful analysis of the basic mechanisms of the Verneuil process led to a methodical study of the many parameters associated with it. Among these, the feed rate, retraction rate, and flame characteristics were found to be most important. A photoelectric cell as the sensor for a servo system with two outputs was used to sense the plane of crystallization and control its position. A completely automated Verneuil apparatus, incorporating this and other control systems, suitable for the study of growth under well-defined, rigidly controlled, and dependably reproducible conditions was designed and constructed.

  9. Protons and deuterons in magnesium-doped sapphire crystals

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez, R.; Gonzalez, R.; Colera, I. [Univ. Carlos III de Madrid, Leganes (Spain). Dept. de Fisica; Vila, R. [CIEMAT, Madrid (Spain). Inst. de Investigacion Basica

    1997-04-01

    Of great importance to the use of ceramics in fusion reactors are the problems associated with the presence of a high level of transmutation products induced by high-energy neutrons. For aluminum oxide, the four major products are magnesium, hydrogen, carbon, and helium. The solubility and diffusivity of hydrogen isotopes strongly depend on the concentration of specific impurities, which results in a change in the position and full-width-at-half-maximum of the OH{sup {minus}} and OD{sup {minus}} bands. The OH{sup {minus}} and OD{sup {minus}} stretching frequencies in magnesium-doped aluminum oxide crystals were determined by infrared absorption measurements. Two very broad bands centered at {approximately}3,005 and 2,228 cm{sup {minus}1} were observed for OH{sup {minus}} and OD{sup {minus}}, respectively. Polarization experiment results were compatible with OH{sup {minus}} (OD{sup {minus}}) ions lying in the basal plane, as is the case in undoped crystals. The threshold temperature for the in-diffusion of deuterons was obtained by annealing the samples in flowing D{sub 2}O vapor; the resulting value was {approximately}1,050 K. At 1223 K, the diffusion coefficient was {approximately}3 {times} 10{sup {minus}7} cm{sup 2}/s, and the activation energy was 1.6 eV.

  10. Giant secondary grain growth in Cu films on sapphire

    Directory of Open Access Journals (Sweden)

    David L. Miller

    2013-08-01

    Full Text Available Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial growth at high temperature using slow deposition in ultrahigh vacuum conditions. Here we describe a different approach that is both simpler to implement and produces superior results: sputter deposition at modest temperatures followed by annealing to induce secondary grain growth. We show that polycrystalline as-deposited Cu on α-Al2O3(0001 can be transformed into Cu(111 with centimeter-sized grains. Employing optical microscopy, x-ray diffraction, and electron backscatter diffraction to characterize the films before and after annealing, we find a particular as-deposited grain structure that promotes the growth of giant grains upon annealing. To demonstrate one potential application of such films, we grow graphene by chemical vapor deposition on wafers of annealed Cu and obtain epitaxial graphene grains of 0.2 mm diameter.

  11. Preparation, properties and application of sapphire single-crystal fibers grown by the EFG method

    Directory of Open Access Journals (Sweden)

    Kubát J.

    2013-05-01

    Full Text Available Sapphire – the single crystal of aluminum oxide (Al2O3 – is one of the most important artificially produced materials. The sapphire fibres studied were grown in Crytur using the “edge-defined film-fed growth” (EFG technique. Their unique physical and chemical properties can be employed in various applications. Due to their high refractive index and a broad transmission band spanning the ultraviolet, visible and infrared bands, sapphire fibres are perfect waveguides in harsh environments. The current major applications are Er:YAG laser beam delivery and pyrometric and spectrometric measurements in furnaces, combustion engines, etc. In this paper we summarize an adjustment of the EFG method to grow thin filaments by giving possible molybdenum die designs. We investigated the fibres using an optical microscope and measured their transmission of an Er:YAG laser beam (2.94 μm. The attenuation of the tested samples is approximately 0.1 dB/cm.

  12. Growth of dopamine crystals

    Energy Technology Data Exchange (ETDEWEB)

    Patil, Vidya, E-mail: vidya.patil@ruparel.edu; Patki, Mugdha, E-mail: mugdha.patki@ruparel.edu [D. G. Ruparel College, Senapati Bapat Marg, Mahim, Mumbai – 400 016 (India)

    2016-05-06

    Many nonlinear optical (NLO) crystals have been identified as potential candidates in optical and electro-optical devices. Use of NLO organic crystals is expected in photonic applications. Hence organic nonlinear optical materials have been intensely investigated due to their potentially high nonlinearities, and rapid response in electro-optic effect compared to inorganic NLO materials. There are many methods to grow organic crystals such as vapor growth method, melt growth method and solution growth method. Out of these methods, solution growth method is useful in providing constraint free crystal. Single crystals of Dopamine have been grown by evaporating the solvents from aqueous solution. Crystals obtained were of the size of orders of mm. The crystal structure of dopamine was determined using XRD technique. Images of crystals were obtained using FEG SEM Quanta Series under high vacuum and low KV.

  13. Growth of dopamine crystals

    Science.gov (United States)

    Patil, Vidya; Patki, Mugdha

    2016-05-01

    Many nonlinear optical (NLO) crystals have been identified as potential candidates in optical and electro-optical devices. Use of NLO organic crystals is expected in photonic applications. Hence organic nonlinear optical materials have been intensely investigated due to their potentially high nonlinearities, and rapid response in electro-optic effect compared to inorganic NLO materials. There are many methods to grow organic crystals such as vapor growth method, melt growth method and solution growth method. Out of these methods, solution growth method is useful in providing constraint free crystal. Single crystals of Dopamine have been grown by evaporating the solvents from aqueous solution. Crystals obtained were of the size of orders of mm. The crystal structure of dopamine was determined using XRD technique. Images of crystals were obtained using FEG SEM Quanta Series under high vacuum and low KV.

  14. Single-crystal sapphire resonator at millikelvin temperatures: Observation of thermal bistability in high- Q factor whispering gallery modes

    Science.gov (United States)

    Creedon, Daniel L.; Tobar, Michael E.; Le Floch, Jean-Michel; Reshitnyk, Yarema; Duty, Timothy

    2010-09-01

    Resonance modes in single crystal sapphire (α-Al2O3) exhibit extremely high electrical and mechanical Q factors ( ≈109 at 4 K), which are important characteristics for electromechanical experiments at the quantum limit. We report the cool down of a bulk sapphire sample below superfluid liquid-helium temperature (1.6 K) to as low as 25 mK. The electromagnetic properties were characterized at microwave frequencies, and we report the observation of electromagnetically induced thermal bistability in whispering gallery modes due to the material T3 dependence on thermal conductivity and the ultralow dielectric loss tangent. We identify “magic temperatures” between 80 and 2100 mK, the lowest ever measured, at which the onset of bistability is suppressed and the frequency-temperature dependence is annulled. These phenomena at low temperatures make sapphire suitable for quantum metrology and ultrastable clock applications, including the possible realization of the quantum-limited sapphire clock.

  15. Direct Growth of a-Plane GaN on r-Plane Sapphire by Metal Organic Chemical Vapor Deposition

    Science.gov (United States)

    Hsu, Hsiao-Chiu; Su, Yan-Kuin; Huang, Shyh-Jer; Wang, Yu-Jen; Wu, Chun-Ying; Chou, Ming-Chieh

    2010-04-01

    In this study, we had demonstrated the direct growth of nonpolar a-plane GaN on an r-plane sapphire by metal organic chemical vapor deposition (MOCVD) without any buffer layer. First, in this experiment, we had determined the optimum temperature for two-step growth, including obtaining three-dimensional (3D) GaN islands in the nucleation layer and coalescing with a further two-dimensional (2D) growth mode. The result shows that the nucleation layer grown under high temperature (1150 °C) leads to large islands with few grain boundaries. Under the same temperature, the effect of the V/III ratio on the growth of the overlaying GaN layer to obtain a flat and void free a-plane GaN layer is also studied. The result indicates one can directly grow a smooth epitaxial layer on an r-plane sapphire by changing the V/III ratio. The rms roughness decreases from 13.61 to 2.02 nm. The GaN crystal quality is verified using a mixed acid to etch the film surface. The etch pit density (EPD) is 3.16 ×107 cm-2.

  16. Growth and characterisation of epitaxially ordered zinc aluminate domains on c-sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Grabowska, J.; Rajendra Kumar, R.T. [School of Physical Sciences/National Centre for Plasma Science and Technology, Dublin City University (Ireland); McGlynn, E. [School of Physical Sciences/National Centre for Plasma Science and Technology, Dublin City University (Ireland)], E-mail: enda.mcglynn@dcu.ie; Nanda, K.K. [School of Physical Sciences/National Centre for Plasma Science and Technology, Dublin City University (Ireland); Newcomb, S.B. [Glebe Scientific Ltd., Newport, Co. Tipperary (Ireland); McNally, P.J.; O' Reilly, L. [School of Electronic Engineering/Research Institute for Networks and Communications Engineering, Dublin City University (Ireland); Mosnier, J.-P.; Henry, M.O. [School of Physical Sciences/National Centre for Plasma Science and Technology, Dublin City University (Ireland)

    2008-02-29

    Epitaxially ordered zinc aluminate domains with sub-micron dimensions are formed on bare c-sapphire substrates using a vapour phase method (with vapour generated by carbothermal reduction of ZnO) at various temperatures and growth durations. A zinc aluminate (ZnAl{sub 2}O{sub 4}) layer is formed by reaction of the source materials (Zn and O) with the substrate. We observe crystallites with a well-defined epitaxial relationship on the sapphire substrate in addition to polycrystalline material. The epitaxially oriented deposit displays the form of characteristically twinned (singly or multiply) grains of sub-micron dimensions with three variants, consistent with the c-sapphire substrate symmetry. Scanning electron microscopy and transmission electron microscopy studies show that the formation of these grains is associated with the presence of extended defects in the sapphire substrate. Epitaxially ordered grains formed at higher temperatures show a change in the nature of the twin boundaries and epitaxial relations as a function of growth time, attributed to the effects of annealing during growth.

  17. Tunable integrated optical filters based on sapphire microspheres and liquid crystals

    Science.gov (United States)

    Gilardi, Giovanni; Yilmaz, Hasan; Sharif Murib, Mohammed; Asquini, Rita; d'Alessandro, Antonio; Serpengüzel, Ali; Beccherelli, Romeo

    2010-05-01

    We present an integrated optical narrowband electrically tunable filter based on the whispering gallery modes of sapphire microspheres and double ion-exchanged channel BK7 glass waveguides. Tuning is provided by a liquid crystal infiltrated between the spheres and the glass substrate. By suitably choosing the radii of the spheres and of the circular apertures, upon which the spheres are positioned, arrays of different filters can be realized on the same substrate with a low cost industrial process. We evaluate the performance in terms of quality factor, mode spacing, and tuning range by comparing the numerical results obtained by the numerical finite element modeling approach and with the analytical approach of the Generalized Lorenz-Mie Theory for various design parameters. By reorienting the LC in an external electrical field, we demonstrate the tuning of the spectral response of the sapphire microsphere based filter. We find that the value of the mode spacing remains nearly unchanged for the different values of the applied electric field. An increase of the applied electric field strength, changes the refractive index of the liquid crystal, so that for a fixed geometry the mode spacing remains unchanged.

  18. All-solid-state narrow-linewidth 455-nm blue laser based on Ti: sapphire crystal

    Institute of Scientific and Technical Information of China (English)

    Shankui Rong; Xiaolei Zhu; Weibiao Chen

    2009-01-01

    A compact, all-solid-state, narrow-linewidth, pulsed 455-nm blue laser based on Ti:sapphire crystal is developed. Pumped by a 10-Hz, frequency-doubled all-solid-state Nd:YAG laser and injection-seeded by an external cavity laser diode, the narrow-linewidth 910-nm laser with pulse width of 20 ns is obtained from a Tirsapphire laser. 3.43-mJ blue laser can be obtained from the laser system by frequency-doubling with BBO crystal. This research is very useful to determine the roadmap of developing the practical, high power blue laser. This kind of laser will have potential application for underwater communication.

  19. SEMICONDUCTOR MATERIALS: Epitaxial growth of ZnO on GaN/sapphire substrate by radio-frequency magnetron sputtering

    Science.gov (United States)

    Xiaoli, Yang; Nuofu, Chen; Zhigang, Yin; Xingwang, Zhang; Yang, Li; Jingbi, You; Yu, Wang; Jingjing, Dong; Min, Cui; Yun, Gao; Tianmao, Huang; Xiaofeng, Chen; Yanshuo, Wang

    2010-09-01

    Zinc oxide (ZnO) thin films were grown on n-GaN/sapphire substrates by radio-frequency (RF) magnetron sputtering. The films were grown at substrate temperatures ranging from 400 to 700 °C for 1 h at a RF power of 80 W in pure Ar gas ambient. The effect of the substrate temperature on the structural and optical properties of these films was investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) spectra. XRD results indicated that ZnO films exhibited wurtzite symmetry and c-axis orientation when grown epitaxially on n-GaN/sapphire. The best crystalline quality of the ZnO film is obtained at a growth temperature of 600 °C. AFM results indicate that the growth mode and degree of epitaxy strongly depend on the substrate temperature. In PL measurement, the intensity of ultraviolet emission increased initially with the rise of the substrate temperature, and then decreased with the temperature. The highest UV intensity is obtained for the film grown at 600 °C with best crystallization.

  20. Advanced Crystal Growth Technology

    Energy Technology Data Exchange (ETDEWEB)

    Land, T A; Hawley-Fedder, R A

    2005-03-01

    Although the fundamental mechanism of crystal growth has received and continues to receive deserved attention as a research activity, similar research efforts addressing the need for advanced materials and processing technology required to grow future high quality crystals has been sorely lacking. The purpose of this research effort is to develop advanced rapid growth processing technologies and materials suitable for providing the quality of products needed for advanced laser and photonics applications. In particular we are interested in developing a methodology for growing high quality KDP crystals based on an understanding of the fundamental mechanisms affecting growth. One problem in particular is the issue of control of impurities during the growth process. Many unwanted impurities are derived from the growth system containers and can adversely affect the optical quality and aspect ratio (shape) of the crystals. Previous studies have shown that even trace concentrations ({approx}10{sup -9} M) of impurities affect growth and even 'insignificant' species can have a large impact. It is also known that impurities affect the two growth faces of KDP very differently. Traces of trivalent metal impurities such as Fe{sup 3+}, Cr{sup 3+}, and Al{sup 3+} in solution are known to inhibit growth of the prismatic {l_brace}100{r_brace} faces of KDP while having little effect on the growth of the pyramidal {l_brace}101{r_brace} faces. This differentiation opens the possibility of intentionally adding select ions to control the aspect ratio of the crystal to obtain a more advantageous shape. This document summarizes our research efforts to improve KDP crystal growth. The first step was to control unwanted impurity addition from the growth vessel by developing an FEP liner to act as a barrier to the glass container. The other focus to develop an understanding of select impurities on growth rates in order to be able to use them to control the habit or shape of the

  1. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2003-04-01

    This report summarizes technical progress over the first six months of the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Research efforts were focused on analyzing and testing factors that impact performance degradation of the initially designed sensor prototype, including sensing element movement within the sensing probe and optical signal quality degradation. Based these results, a new version of the sensing system was designed by combining the sapphire disk sensing element and the single crystal zirconia right angle light reflector into one novel single crystal sapphire right angle prism. The new sensor prototype was tested up to 1650 C.

  2. The study on the nanomachining property and cutting model of single-crystal sapphire by atomic force microscopy.

    Science.gov (United States)

    Huang, Jen-Ching; Weng, Yung-Jin

    2014-01-01

    This study focused on the nanomachining property and cutting model of single-crystal sapphire during nanomachining. The coated diamond probe is used to as a tool, and the atomic force microscopy (AFM) is as an experimental platform for nanomachining. To understand the effect of normal force on single-crystal sapphire machining, this study tested nano-line machining and nano-rectangular pattern machining at different normal force. In nano-line machining test, the experimental results showed that the normal force increased, the groove depth from nano-line machining also increased. And the trend is logarithmic type. In nano-rectangular pattern machining test, it is found when the normal force increases, the groove depth also increased, but rather the accumulation of small chips. This paper combined the blew by air blower, the cleaning by ultrasonic cleaning machine and using contact mode probe to scan the surface topology after nanomaching, and proposed the "criterion of nanomachining cutting model," in order to determine the cutting model of single-crystal sapphire in the nanomachining is ductile regime cutting model or brittle regime cutting model. After analysis, the single-crystal sapphire substrate is processed in small normal force during nano-linear machining; its cutting modes are ductile regime cutting model. In the nano-rectangular pattern machining, due to the impact of machined zones overlap, the cutting mode is converted into a brittle regime cutting model.

  3. Intracavity doubling of CW Ti:sapphire laser to 392.5 nm using BiBO-crystal

    DEFF Research Database (Denmark)

    Mortensen, Jesper Liltorp; Thorhauge, Morten; Tidemand-Lichtenberg, Peter

    2005-01-01

    In this work we present results obtained for intra-cavity frequency-doubling of a 785 nm CW Ti:sapphire laser utilising BiBO as the non-linear crystal. Intracavity doubling offers several advantages compared to extra-cavity doubling, such as no need to couple to an external resonance cavity...

  4. Single-crystal Sapphire Based Optical Polarimetric Sensor for High Temperature Measurement

    Directory of Open Access Journals (Sweden)

    Anbo Wang

    2006-08-01

    Full Text Available Optical sensors have been investigated and widely deployed in industrial andscientific measurement and control processes, mainly due to their accuracy, high sensitivityand immunity to electromagnetic interference and other unique characteristics. They areespecially suited for harsh environments applications, where no commercial electricalsensors are available for long-term stable operations. This paper reports a novel contactoptical high temperature sensor targeting at harsh environments. Utilizing birefringentsingle crystal sapphire as the sensing element and white light interferometric signalprocessing techniques, an optical birefringence based temperature sensor was developed.With a simple mechanically structured sensing probe, and an optical spectrum-codedinterferometric signal processor, it has been tested to measure temperature up to 1600 °Cwith high accuracy, high resolution, and long-term measurement stability.

  5. Crystal growth and crystallography

    Science.gov (United States)

    Chernov, A. A.

    1998-01-01

    Selected topics that may be of interest for both crystal-structure and crystal-growth communities are overviewed. The growth of protein crystals, along with that of some other compounds, is one of the topics, and recent insights into related phenomena are considered as examples of applications of general principles. The relationship between crystal growth shape and structure is reviewed and an attempt to introduce semiquantitative characterization of binding for proteins is made. The concept of kinks for complex structures is briefly discussed. Even at sufficiently low supersaturations, the fluctuation of steps may not be sufficient to implement the Gibbs-Thomson law if the kink density is low enough. Subsurface ordering of liquids and growth of rough interfaces from melts is discussed. Crystals growing in microgravity from solution should be more perfect if they preferentially trap stress-inducing impurities, thus creating an impurity-depleted zone around themselves. Evidently, such a zone is developed only around the crystals growing in the absence of convection. Under terrestrial conditions, the self-purified depleted zone is destroyed by convection, the crystal traps more impurity and grows stressed. The stress relief causes mosaicity. In systems containing stress-inducing but poorly trapped impurities, the crystals grown in the absence of convection should be worse than those of their terrestrial counterparts.

  6. Studies on Crystal Orientation of ZnO Film on Sapphire Using High-throughout X-ray Diffraction

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The orientation of the nano-columnar ZnO films grown on sapphire using the technique of metal-organic chemical vapor deposition (MOCVD) exhibits deviation because of the mismatch between the crystal lattices of the films and the sapphire substrate. A high-throughout X-ray diffraction method was employed to determine the crystal orientation of the ZnO films at a time scale of the order of minutes based on the general area detection diffraction system (GADDS). This rapid, effective, and ready method, adapted for characterizing the orientation of the nano-columnar crystals is used to directly explain the results of observation of the X-ray diffraction images, by the measurements of the orientations of the crystal columns of the ZnO films along c-axis and in parallel to ab plane.

  7. Growth of p-CdTe thin films on n-GaN/sapphire

    Science.gov (United States)

    Jung, Younghun; Chun, Seunju; Kim, Donghwan; Kim, Jihyun

    2011-07-01

    CdTe thin film was successfully grown on GaN/Sapphire substrate using a close spaced sublimation (CSS) system for the applications in solar cells. CdTe thin film was characterized by SEM, micro-Raman spectroscopy, and X-ray diffraction. The growth rate was 1 μm/min. In addition, we confirmed that CdCl 2 treatment beneficially influenced the structure and composition of the CdTe thin films. CdCl 2 treatment which has been known that it improved the efficiency of the CdS/CdTe solar cells, produced similar positive effects such as increasing the CdTe grain size and reducing the number of pin-holes. The growth of the CdTe thin film by CSS method produced nominal effects on biaxial strain and carrier concentrations in the GaN/Sapphire substrate. The CdTe thin film grown on the GaN/Sapphire substrate holds great promise for use in solar cell applications due to its several advantages.

  8. Laser-induced microexplosion confined in the bulk of a sapphire crystal: evidence of multimegabar pressures.

    Science.gov (United States)

    Juodkazis, S; Nishimura, K; Tanaka, S; Misawa, H; Gamaly, E G; Luther-Davies, B; Hallo, L; Nicolai, P; Tikhonchuk, V T

    2006-04-28

    Extremely high pressures (approximately 10 TPa) and temperatures (5 x 10(5) K) have been produced using a single laser pulse (100 nJ, 800 nm, 200 fs) focused inside a sapphire crystal. The laser pulse creates an intensity over 10(14) W/cm2 converting material within the absorbing volume of approximately 0.2 microm3 into plasma in a few fs. A pressure of approximately 10 TPa, far exceeding the strength of any material, is created generating strong shock and rarefaction waves. This results in the formation of a nanovoid surrounded by a shell of shock-affected material inside undamaged crystal. Analysis of the size of the void and the shock-affected zone versus the deposited energy shows that the experimental results can be understood on the basis of conservation laws and be modeled by plasma hydrodynamics. Matter subjected to record heating and cooling rates of 10(18) K/s can, thus, be studied in a well-controlled laboratory environment.

  9. 蓝宝石晶体的双面研磨加工%Dual-lapping process for sapphire crystal

    Institute of Scientific and Technical Information of China (English)

    文东辉; 洪滔; 张克华; 鲁聪达

    2009-01-01

    In order to achieve high efficiency and low damaged layers during a sapphire crystal lapping process,an experimental research on the rougness,lapping uniformity and sub-surface damaged layer were studied in this paper.The sapphire with (0001) orientation was lapped by 280 mesh boron carbide abrasive grits.The effects of lapping time on the material removal rates and surface roughness were investigated,and the processing remainders by the dual-lapping were determined in accordance with the surface states of the sapphire.Then micro-surface uniformity of the sapphire was also presented by using WYKO laser equipment.Finally,a nano-indentation test was carried out to measure the depth of damaged layer according to the hardness or modulus variances.Experimental results show that the sapphire crystal can offer the R,in 0.523 μm,R,<6.0 μm,the depth of heavy damaged layer of 460 nm,and the depth of sub-surface damaged layer no more than 1 μm,after it is lapped by the abrasive with 280 mesh boron carbide grits in 120 min.%为了实现对蓝宝石晶体的高效低损伤研磨加工,对蓝宝石晶体的双面研磨加工表面粗糙度、研磨均匀性和亚表面损伤层的深度进行实验研究.采用280min的双面研磨加工后可以获得Ra为0.523 μm,Rt<6.0 μm的表面;其深度损伤层约为460 nm,亚表面损伤层<1 μm.

  10. Quartz crystal growth

    Science.gov (United States)

    Baughman, Richard J.

    1992-01-01

    A process for growing single crystals from an amorphous substance that can undergo phase transformation to the crystalline state in an appropriate solvent. The process is carried out in an autoclave having a lower dissolution zone and an upper crystallization zone between which a temperature differential (.DELTA.T) is maintained at all times. The apparatus loaded with the substance, solvent, and seed crystals is heated slowly maintaining a very low .DELTA.T between the warmer lower zone and cooler upper zone until the amorphous substance is transformed to the crystalline state in the lower zone. The heating rate is then increased to maintain a large .DELTA.T sufficient to increase material transport between the zones and rapid crystallization. .alpha.-Quartz single crystal can thus be made from fused quartz in caustic solvent by heating to 350.degree. C. stepwise with a .DELTA.T of 0.25.degree.-3.degree. C., increasing the .DELTA.T to about 50.degree. C. after the fused quartz has crystallized, and maintaining these conditions until crystal growth in the upper zone is completed.

  11. Growth of Single Crystals and Fabrication of GaN and AlN Wafers

    Science.gov (United States)

    2006-03-01

    in nature and thus must be synthesized. Crystal growth of this group using standard methods ( Czochralski , Bridgman) is extremely difficult because of...reaction zone in which deposition occurs. High growth rates of up to 0.5 mm/h were obtained with this method ; however, the crystals grew only for short...Chapter Five presents the growth of GaN on sapphire with a modified sandwich growth method which is a variation of vapor phase transport process. Optimum

  12. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2003-11-01

    This report summarizes technical progress over the second six month period of the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Research efforts were focused on evaluating corrosion effects in single crystal sapphire at temperatures up to 1400 C, and designing the sensor mechanical packaging with input from Wabash River Power Plant. Upcoming meetings will establish details for the gasifier field test.

  13. Thermal Conductance through Sapphire-Sapphire Bonding

    Science.gov (United States)

    Suzuki, T.; Tomaru, T.; Haruyama, T.; Shintomi, T.; Uchinyama, T.; Miyoki, S.; Ohashi, M.; Kuroda, K.

    2003-07-01

    Thermal conductance on sapphire-sapphire bonded interface has been investigated. Two pieces of single crystal sapphire bar with square cross section were bonded together by adhesion free bonding. In two sections of the bar, thermal conductivity was measured between 5 K to 300K. One section contains a bonded interface and the other section measured a thermal conductivity of the sapphire as a reference. No significant thermal resistance due to bonded interface was found from this measurement. Obtained thermal conductivity reaches κ 1 × 104 [W/m·K] in temperature range of T = 20 ˜ 30 K which is a planned operating temperature of a cryogenic mirror of the Large scale Cryogenic Gravitational wave telescope. It looks promising for sapphire bonding technique to improve a heat transfer from a large cryogenic mirror to susp ension wires.

  14. Growth of ZnO Single Crystal by Chemical Vapor Transport Method

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    ZnO crystals were grown by CVT method in closed quartz tube under seeded condition. Carbon was used as a transport agent to enhance the chemical transport of ZnO in the growth process. ZnO single crystals were grown by using GaN/sapphire and GaN/Si wafer as seeds. The property and crystal quality of the ZnO single crystals was studied by photoluminescence spectroscopy and X-ray diffraction technique.

  15. Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate.

    Science.gov (United States)

    Wu, YewChung Sermon; Isabel, A Panimaya Selvi; Zheng, Jian-Hsuan; Lin, Bo-Wen; Li, Jhen-Hong; Lin, Chia-Chen

    2015-04-22

    The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space (percentage of c-plane). However, when the pattern space decreased to 0.41 μm (S0.41-GaN), the GaN crystallinity dropped. On the other hand, the light output power of GaN-based LEDs was increased with the decrease of the pattern space due to the change of the light extraction efficiency.

  16. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Anbo Wang

    2007-03-31

    This report summarizes technical progress October 2006 - March 2007 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. During the second phase, an alternative high temperature sensing system based on Fabry-Perot interferometry was developed that offers a number of advantages over the BPDI solution. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. The sapphire wafer-based interferometric sensing system that was installed at TECO's Polk Power Station remained in operation for seven months. Our efforts have been focused on monitoring and analyzing the real-time data collected, and preparing for a second field test.

  17. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Anbo Wang

    2007-03-31

    This report summarizes technical progress October 2006 - March 2007 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. During the second phase, an alternative high temperature sensing system based on Fabry-Perot interferometry was developed that offers a number of advantages over the BPDI solution. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. The sapphire wafer-based interferometric sensing system that was installed at TECO's Polk Power Station remained in operation for seven months. Our efforts have been focused on monitoring and analyzing the real-time data collected, and preparing for a second field test.

  18. Growth Front Evolution of GaN Thin Films on Sapphire Substrate During HVPE

    Institute of Scientific and Technical Information of China (English)

    LU Dian-qing; LI Xin-hua; LIU Xue-dong

    2005-01-01

    The growth front evolution of GaN thin films deposited on sapphire substrate by hydride vapor phase epitaxity has been studied with atomic force microscope. The evolution of the surface morphology presents four features of stage with the growth process. In initial growth stage, the surface is granular, and the typical grain diameter is about 250 nm for t =0.1 min. 3D growth plays a key role before the films come up to full coalescence, which causes a rough surface. After 0. 1 min the growth dimension decreases with the increase of lateral over growth, the surface roughness obviously decreases. From 0.4 min to 3 min, the growth front roughness increases gradually, and the evolution of the surface roughness exhibits the characteristics of self-affined fractal. Beyond 3 min, the root-mean-square decreases gradually, which means the deposition behavior from hyper-2D growth gradually turns into layer growth mode with the increase of growth time.

  19. 单晶蓝宝石的延性研磨加工%Ductile lapping of single crystal sapphire

    Institute of Scientific and Technical Information of China (English)

    戴欣平; 赵萍; 文东辉

    2012-01-01

    To achieve the ductile lapping of a single crystal sapphire, micro/nano mechanic characteristics of the sapphire (0001) plane were measured by nanoindentation and nanoscratch methods. The indentation model of single cone abrasive grain was proposed and then critical force conditions were deduced during ductile lapping process. Experimental studies were conducted for the single crystal sapphire based on the diamond abrasive grain charging into a synthetic tin plate, and characteristics of ductile lapped surface were measured by a NT9800 white light interferometer, a Scan Emission Microscopy (SEM) and a Transmission Electron Microscopy (TEM). Experimental results show that nanoindentation and nanoscratch methods can provide processing parameters for the ductile lapping of single crystal sapphires, and its critical depth of pile-up is around 100 nm for sapphire nanoindenta-tion. The ductile lapping of the single crystal sapphire can be implemented by charging into diamond abrasive grains and selecting proper loads and the optimal load for ductile lapping is 21 kPa. After ductile lapping, the surface scratch depth of single crystal sapphire shows a smaller dispersion and the dislocation and slip are formed on the lapped surface.%为实现单晶蓝宝石的延性研磨加工,采用纳米压痕和划痕法测试并分析了单晶蓝宝石(0001)面的微纳力学特性,建立了单颗圆锥状磨粒的压入模型并计算了延性研磨加工的受力临界条件,分析了金刚石磨粒嵌入合成锡研磨盘表面的效果.对单晶蓝宝石进行了延性研磨加工试验,采用NT9800白光干涉仪、扫描电子显微镜(SEM)和透射电子显微镜(TEM)等方法分析了单晶蓝宝石的延性研磨表面特征.试验结果表明:采用纳米压痕和划痕法可以为单晶蓝宝石的延性研磨加工提供工艺参数,单晶蓝宝石的延性堆积的极限深度为100 nm,金刚石磨粒的嵌入及在适当载荷下可以实现蓝宝石的延性研磨加

  20. Growth habit of polar crystals

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Using coordination polyhedron rule, growth habit of polar crystals such as ZnO, ZnS and SiO2 is investigated. It shows that the growth rates in the positive and negative polar axis directions are different. The theoretical growth habit of ZnO crystal is hexagonal prism and the growth rates of its various faces are:V{0001}>V{0111}-->V{0110}->V{0111}->V{0001}-. The growth habit of ZnS crystal is tetrahedron and its growth rates of different crystal faces are: V{111}>V{001}>V{001} =V{100} =. The growth rate relationship between positive and negative polar axis directions of SiO2 crystal V[1120]-->V[1120]-.is These results are in agreement with the growth habits observed under hydrothermal conditions. The different growth rates between positive and negative polar axis directions cannot be explained by PBC theory.

  1. 100 mW of blue light at 405 nm from intracavity doubling of CW Ti:Sapphire laser utilising BiBO-crystal

    DEFF Research Database (Denmark)

    Thorhauge, Morten; Mortensen, Jesper Liltorp; Tidemand-Lichtenberg, Peter

    2006-01-01

    100 mW of coherent blue light with a wavelength of 405 nm was generated utilising a BiB3O6 (BiBO) nonlinear crystal to frequency double a Ti:Sapphire laser. Phase match curves as well as sensitivity to angular misalignment was calculated. The BiBO crystal was found to be excellent for this applic...

  2. Birefringence measurements in single crystal sapphire and calcite shocked along the a axis

    Science.gov (United States)

    Tear, Gareth R.; Chapman, David J.; Eakins, Daniel E.; Proud, William G.

    2017-01-01

    Calcite and sapphire were shock compressed along the direction (a axis) in a plate impact configuration. Polarimetery and Photonic Doppler Velocimetery (PDV) were used to measure the change in birefringence with particle velocity in the shock direction. Results for sapphire agree well with linear photoelastic theory and current literature showing a linear relationship between birefringence and particle velocity up to 310 m s-1. A maximum change in birefringence of 5% was observed. Calcite however showed anomolous behaviour with no detectable change in birefringence (less than 0.1%) over the range of particle velocities studied (up to 75 m s-1).

  3. Springer Handbook of Crystal Growth

    CERN Document Server

    Dhanaraj, Govindhan; Prasad, Vishwanath; Dudley, Michael

    2010-01-01

    Over the years, many successful attempts have been made to describe the art and science of crystal growth. Most modern advances in semiconductor and optical devices would not have been possible without the development of many elemental, binary, ternary, and other compound crystals of varying properties and large sizes. The objective of the Springer Handbook of Crystal Growth is to present state-of-the-art knowledge of both bulk and thin-film crystal growth. The goal is to make readers understand the basics of the commonly employed growth processes, materials produced, and defects generated. Almost 100 leading scientists, researchers, and engineers from 22 different countries from academia and industry have been selected to write chapters on the topics of their expertise. They have written 52 chapters on the fundamentals of bulk crystal growth from the melt, solution, and vapor, epitaxial growth, modeling of growth processes and defects, techniques of defect characterization as well as some contemporary specia...

  4. Effects of Growth Conditions on Structural Properties of ZnO Nanostructures on Sapphire Substrate by Metal–Organic Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Horng RH

    2009-01-01

    Full Text Available Abstract ZnO was grown on sapphire substrate by metal–organic chemical vapor deposition using the diethylzinc (DEZn and oxygen (O2 as source chemicals at 500 °C. Influences of the chamber pressure and O2/DEZn ratio on the ZnO structural properties were discussed. It was found that the chamber pressure has significant effects on the morphology of ZnO and could result in various structures of ZnO including pyramid-like, worm-like, and columnar grain. When the chamber pressure was kept at 10 Torr, the lowest full width at half-maximum of ZnO (002 of 175 arc second can be obtained. On the other hand, by lowering the DEZn flow rate, the crystal quality of ZnO can be improved. Under high DEZn flow rate, the ZnO nanowall-network structures were found to grow vertically on the sapphire substrate without using any metal catalysts. It suggests that higher DEZn flow rate promotes three-dimensional growth mode resulting in increased surface roughness. Therefore, some tip on the ZnO surface could act as nucleation site. In this work, the growth process of our ZnO nanowall networks is said to follow the self-catalyzed growth mechanism under high-DEZn flow rate.

  5. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang; Zhengyu Huang; Yizheng Zhu

    2005-04-01

    This report summarizes technical progress October 2004-March 2005 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Due to the difficulties described on the last report, field testing of the BPDI system has not continued to date. However, we have developed an alternative high temperature sensing solution, which is described in this report.

  6. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang; Zhengyu Huang

    2004-04-01

    This report summarizes technical progress over the third six month period of the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Research efforts were focused on sensor probe design and machining, sensor electronics design, software algorithm design, sensor field installation procedures, and sensor remote data access and control. Field testing will begin in the next several weeks.

  7. ON-LINE SELF-CALIBRATING SINGLE CRYSTAL SAPPHIRE OPTICAL SENSOR INSTRUMENTATION FOR ACCURATE AND RELIABLE COAL GASIFIER TEMPERATURE MEASUREMENT

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang; Zhengyu Huang; Yizheng Zhu

    2005-04-01

    This report summarizes technical progress October 2004-March 2005 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the BPDI sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Due to the difficulties described on the last report, field testing of the BPDI system has not continued to date. However, we have developed an alternative high temperature sensing solution, which is described in this report.

  8. Growth of Few-Layer Graphene on Sapphire Substrates by Directly Depositing Carbon Atoms

    Institute of Scientific and Technical Information of China (English)

    KANG Chao-Yang; TANG Jun; LIU Zhong-Liang; LI Li-Min; YAN Wen-Sheng; WEI Shi-Qiang; XU Peng-Shou

    2011-01-01

    Few-layer graphene (FLG) is successfully grown on sapphire substrates by directly depositing carbon atoms at the substrate temperature of 1300℃ in a molecular beam epitaxy chamber.The reflection high energy diffraction,Raman spectroscopy and near-edge x-ray absorption fine structure are used to characterize the sample,which confirm the formation of graphene layers.The mean domain size of FLG is around 29.2 nm and the layer number is about 2-3.The results demonstrate that the grown FLG displays a turbostratic stacking structure similar to that of the FLG produced by annealing C-terminated a-SiC surface.Graphene,a monolayer of sp2-bonded carbon atoms,is a quasi two-dimensional (2D) material.It has attracted great interest because of its distinctive band structure and physical properties.[1] Graphene can now be obtained by several different approaches including micromechanical[1] and chemical[2] exfoliation of graphite,epitaxial growth on hexagonal SiC substrates by Si sublimation in vacuum,[3] and CVD growth on metal substrates.[4] However,these preparation methods need special substrates,otherwise,in order to design microelectronic devices,the prepared graphene should be transferred to other appropriate substrates.Thus the growth of graphene on the suitable substrates is motivated.%Few-layer graphene (FLG) is successfully grown on sapphire substrates by directly depositing carbon atoms at the substrate temperature of 1300℃ in a molecular beam epitaxy chamber. The reflection high energy diffraction, Raman spectroscopy and near-edge x-ray absorption fine structure are used to characterize the sample, which confirm the formation of graphene layers. The mean domain size of FLG is around 29.2nm and the layer number is about 2-3. The results demonstrate that the grown FLG displays a turbostratic stacking structure similar to that of the FLG produced by annealing C-terminated α-SiC surface.

  9. Fluid flow and solute segregation in EFG crystal growth process

    Science.gov (United States)

    Bunoiu, O.; Nicoara, I.; Santailler, J. L.; Duffar, T.

    2005-02-01

    The influence of the die geometry and various growth conditions on the fluid flow and on the solute distribution in EFG method has been studied using numerical simulation. The commercial FIDAP software has been used in order to solve the momentum and mass transfer equations in the capillary channel and in the melt meniscus. Two types of shaper design are studied and the results are in good agreement with the void distribution observed in rod-shaped sapphire crystals grown by the EFG method in the various configurations.

  10. Surrogate Seeds For Growth Of Crystals

    Science.gov (United States)

    Shlichta, Paul J.

    1989-01-01

    Larger crystals of higher quality grown. Alternative method for starting growth of crystal involves use of seed crystal of different material instead of same material as solution. Intended for growing single-crystal proteins for experiments but applicable in general to growth of crystals from solutions and to growth of semiconductor or other crystals from melts.

  11. Growth of crystalline ZnO films on the nitridated (0001) sapphire surface

    Energy Technology Data Exchange (ETDEWEB)

    Butashin, A. V.; Kanevsky, V. M.; Muslimov, A. E., E-mail: amuslimov@mail.ru; Prosekov, P. A.; Kondratev, O. A.; Blagov, A. E.; Vasil’ev, A. L.; Rakova, E. V. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation); Babaev, V. A.; Ismailov, A. M. [Dagestan State University (Russian Federation); Vovk, E. A.; Nizhankovsky, S. V. [National Academy of Sciences of Ukraine, Institute for Single Crystals (Ukraine)

    2015-07-15

    The surface morphology and structure of (0001) sapphire substrates subjected to thermochemical nitridation in a mixture of N{sub 2}, CO, and H{sub 2} gases are investigated by electron and probe microscopy and X-ray and electron diffraction. It is shown that an aluminum nitride layer is formed on the substrate surface and heteroepitaxial ZnO films deposited onto such substrates by magnetron sputtering have a higher quality when compared with films grown on sapphire.

  12. Ultrahigh resolution optical coherence tomography with femtosecond Ti:sapphire laser and photonic crystal fiber

    Institute of Scientific and Technical Information of China (English)

    XUE Ping; James G FUJIMOTO

    2008-01-01

    Optical coherence tomography (OCT) with ultrahigh axial resolution was achieved by the super-contin- uum generated by coupling femtosecond pulses from a commercial Ti :sapphire laser into an air-silica microstructure fiber. The visible spectrum of the super-continuum from 450 to 700 nm centered at 540 nm can be generated. A free-space axial OCT resolution of 0.64 IJm was achieved. The sensitivity of OCT system was 108 dB with incident light power 3 mW at sample, only 7dB below the theoretical limit. Subcellular OCT imaging was also demonstrated, showing great potential for biomedical application.

  13. Supercontinuum Generation Using a Polarization-Maintaining Photonic Crystal Fibre by a Regeneratively Amplified Ti:Sapphire Laser

    Institute of Scientific and Technical Information of China (English)

    YU Yong-Qin; RUAN Shuang-Chen; DU Chen-Lin; YAO Jian-Quan

    2005-01-01

    @@ Supercontinuum with an ultra-broad bandwidth in the range from 380nm to 1750nm was generated by injecting 250 kHz 200 fs optical pulses produced by a regeneratively amplified Ti:sapphire laser into a 2.5-m-long polarization-maintaining photonic crystal fibre (PCF). It is indicated that the mechanism for the supercontinuum generation in the anomalous dispersion region of the PCF are directly related to the Raman effect, the fission of higher-order solitons, nonsolitonic radiation, and the coinstantaneous effect of four-wave mixing. The frequency components beyond 1.4 μm were also observed. It is interpreted that the energy of solitons is shifted beyond the OH absorption with a higher input power.

  14. Tunable intra-cavity SHG of CW Ti:Sapphire lasers around 785 nm and 810 nm in BiBO-crystals

    DEFF Research Database (Denmark)

    Thorhauge, Morten; Mortensen, Jesper Liltorp; Tidemand-Lichtenberg, Peter

    2006-01-01

    Phasematch curves as well as sensitivity to angular and wavelength misalignment for generation of second-harmonic of 785 nm and 810 nm in Bi3BO6 crystal was calculated. Measurements were done for intra-cavity CW SHG in a Ti:Sapphire laser. The BiBO crystal was found to be excellent for this appli......Phasematch curves as well as sensitivity to angular and wavelength misalignment for generation of second-harmonic of 785 nm and 810 nm in Bi3BO6 crystal was calculated. Measurements were done for intra-cavity CW SHG in a Ti:Sapphire laser. The BiBO crystal was found to be excellent...

  15. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2005-11-01

    This report summarizes technical progress April-September 2005 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Due to the difficulties described on the last report, field testing of the BPDI system has not continued to date. However, we have developed an alternative high temperature sensing solution, which is described in this report. The sensing system will be installed and tested at TECO's Polk Power Station. Following a site visit in June 2005, our efforts have been focused on preparing for that field test, including he design of the sensor mechanical packaging, sensor electronics, the data transfer module, and the necessary software codes to accommodate this application.. We are currently ready to start sensor fabrication.

  16. On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement

    Energy Technology Data Exchange (ETDEWEB)

    Kristie Cooper; Gary Pickrell; Anbo Wang

    2005-11-01

    This report summarizes technical progress April-September 2005 on the Phase II program ''On-Line Self-Calibrating Single Crystal Sapphire Optical Sensor Instrumentation for Accurate and Reliable Coal Gasifier Temperature Measurement'', funded by the Federal Energy Technology Center of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. The objective of this program is to bring the sensor technology, which has already been demonstrated in the laboratory, to a level where the sensor can be deployed in the harsh industrial environments and will become commercially viable. Due to the difficulties described on the last report, field testing of the BPDI system has not continued to date. However, we have developed an alternative high temperature sensing solution, which is described in this report. The sensing system will be installed and tested at TECO's Polk Power Station. Following a site visit in June 2005, our efforts have been focused on preparing for that field test, including he design of the sensor mechanical packaging, sensor electronics, the data transfer module, and the necessary software codes to accommodate this application.. We are currently ready to start sensor fabrication.

  17. Czochralski crystal growth: Modeling study

    Science.gov (United States)

    Dudukovic, M. P.; Ramachandran, P. A.; Srivastava, R. K.; Dorsey, D.

    1986-01-01

    The modeling study of Czochralski (Cz) crystal growth is reported. The approach was to relate in a quantitative manner, using models based on first priniciples, crystal quality to operating conditions and geometric variables. The finite element method is used for all calculations.

  18. The Growth of KLN Crystals

    Institute of Scientific and Technical Information of China (English)

    1999-01-01

    The growth temperature curve of the growth system for the potass ium li thium niobate (KLN) has been measured and the temperature decrease program has b een calculated. KLN crystals with a size up to 30mm × 15mm × 5 mm have be en grown by flux method. The primary factors of the cracking of KLN crystal hav e been discussed. A blue laser light output has been obtained by optical parame tric oscillator pumping.

  19. Ultraviolet laser crystallized ZnO:Al films on sapphire with high Hall mobility for simultaneous enhancement of conductivity and transparency

    Energy Technology Data Exchange (ETDEWEB)

    Nian, Qiong; Zhang, Martin Y. [School of Industrial Engineering, Purdue University, 315N. Grant St, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, 1205W State St, West Lafayette, Indiana 47907 (United States); Schwartz, Bradley D. [Goodrich Corporation, UTC Aerospace Systems, 100 Wooster Heights Road, Danbury, Connecticut 06810 (United States); Cheng, Gary J., E-mail: gjcheng@purdue.edu [School of Industrial Engineering, Purdue University, 315N. Grant St, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, 1205W State St, West Lafayette, Indiana 47907 (United States); School of Mechanical Engineering, Purdue University, 585 Purdue Mall, West Lafayette, Indiana 47907 (United States)

    2014-05-19

    One of the most challenging issues in transparent conductive oxides (TCOs) is to improve their conductivity without compromising transparency. High conductivity in TCO films often comes from a high carrier concentration, which is detrimental to transparency due to free carrier absorption. Here we show that UV laser crystallization (UVLC) of aluminum-doped ZnO (AZO) films prepared by pulsed laser deposition on sapphire results in much higher Hall mobility, allowing relaxation of the constraints of the conductivity/transparency trade-off. X-ray diffraction patterns and morphological characterizations show grain growth and crystallinity enhancement during UVLC, resulting in less film internal imperfections. Optoelectronic measurements show that UVLC dramatically improves the electron mobility, while the carrier concentration decreases which in turn simultaneously increases conductivity and transparency. AZO films under optimized UVLC achieve the highest electron mobility of 79 cm{sup 2}/V s at a low carrier concentration of 7.9 × 10{sup +19} cm{sup −3}. This is realized by a laser crystallization induced decrease of both grain boundary density and electron trap density at grain boundaries. The infrared (IR) to mid-IR range transmittance spectrum shows UVLC significantly enhances the AZO film transparency without compromising conductivity.

  20. Optical transmittance investigation of 1-keV ion-irradiated sapphire crystals as potential VUV to NIR window materials of fusion reactors

    Directory of Open Access Journals (Sweden)

    Keisuke Iwano

    2016-10-01

    Full Text Available We investigate the optical transmittances of ion-irradiated sapphire crystals as potential vacuum ultraviolet (VUV to near-infrared (NIR window materials of fusion reactors. Under potential conditions in fusion reactors, sapphire crystals are irradiated with hydrogen (H, deuterium (D, and helium (He ions with 1-keV energy and ∼ 1020-m-2 s-1 flux. Ion irradiation decreases the transmittances from 140 to 260 nm but hardly affects the transmittances from 300 to 1500 nm. H-ion and D-ion irradiation causes optical absorptions near 210 and 260 nm associated with an F-center and an F+-center, respectively. These F-type centers are classified as Schottky defects that can be removed through annealing above 1000 K. In contrast, He-ion irradiation does not cause optical absorptions above 200 nm because He-ions cannot be incorporated in the crystal lattice due to the large ionic radius of He-ions. Moreover, the significant decrease in transmittance of the ion-irradiated sapphire crystals from 140 to 180 nm is related to the light scattering on the crystal surface. Similar to diamond polishing, ion irradiation modifies the crystal surface thereby affecting the optical properties especially at shorter wavelengths. Although the transmittances in the VUV wavelengths decrease after ion irradiation, the transmittances can be improved through annealing above 1000 K. With an optical transmittance in the VUV region that can recover through simple annealing and with a high transparency from the ultraviolet (UV to the NIR region, sapphire crystals can therefore be used as good optical windows inside modern fusion power reactors in terms of light particle loadings of hydrogen isotopes and helium.

  1. Protein Crystal Growth in Microgravity

    Institute of Scientific and Technical Information of China (English)

    毕汝昌; 桂璐璐; 师珂; 王耀萍; 陈世芝; 韩青; 胡永林; 沈福苓; 牛秀田; 华子谦; 卢光莹; 张健; 李松林; 龚为民; 牛立文; 黄其辰

    1994-01-01

    Protein crystal growth is quite important for the determination of protein structureswhich are essential to the understanding of life at molecular level as well as to the development of molecu-lar biotechnology.The microgravity environment of space is an ideal place to study the complicated pro-tein crystallization and to grow good-quality protein crystals.A number of crystal-growth experiments of10 different proteins were carried out in August,1992 on the Chinese re-entry satellite FSW-2 in spaceusing a tube crystallization equipment made in China.A total of 25 samples from 6 proteins producedcrystals,and the effects of microgravity on protein crystal growth were observed,especially for an acidicphospholipase A2 and henegg-white lysozyme which gave better crystals in space than earth-grown crys-tals in ground control experiments.The results have shown that the microgravity in space favors the im-provement of the size,perfection,morphology and internal order of the grown protein crytals.

  2. Evolution of the sapphire industry: Rubicon Technology and Gavish

    Science.gov (United States)

    Harris, Daniel C.

    2009-05-01

    A. Verneuil developed flame fusion to grow sapphire and ruby on a commercial scale around 1890. Flame fusion was further perfected by Popov in the Soviet Union in the 1930s and by Linde Air Products Co. in the U.S. during World War II. Union Carbide Corp., the successor to Linde, developed Czochralski crystal growth for sapphire laser materials in the 1960s. Stepanov in the Soviet Union published his sapphire growth method in 1959. Edge-Defined Film-Fed Growth (EFG), which is similar to the Stepanov method, was developed by H. Labelle in the U. S. in the 1960s and 1970s. The Heat Exchanger Method (HEM), invented by F. Schmid and D. Viechnicki in 1967 was commercialized in the 1970s. Gradient solidification was invented in Israel in the 1970s by J. Makovsky. The Horizontal Directional Solidification Method (HDSM) proposed by Kh. S. Bagdasorov in the Soviet Union in the 1960s was further developed at the Institute for Single Crystals in Ukraine. Kyropoulos growth of sapphire, known as GOI crystal growth in the Soviet Union, was developed by M. Musatov at the State Optical Institute in St. Petersburg in the 1970s and 1980s. At the Institute for Single Crystals in Ukraine, E. Dobrovinskaya characterized Verneuil, Czochralsky, Bagdasarov, and GOI sapphire. In 1995, she emigrated to the United States and joined S&R Rubicon, founded near Chicago by R. Mogilevsky initially to import sapphire and ruby. Mogilevsky began producing sapphire by the Kyropoulos method in 1999. In 2000 the company name was changed to Rubicon Technology. Today, Dobrovinskaya is Chief Scientist and Rubicon produces high quality Kyropoulos sapphire substrates for solid-state lighting. In 1995, H. Branover of Ben Gurion University and a sole investor founded Gavish, which is Hebrew for "crystal." They invited another veteran of the Ukrainian Institute for Single Crystals, V. Pishchik, to become Chief Scientist. Under Pishchik's technical leadership and J. Sragowicz's business leadership, Gavish now

  3. Method of surface treatment on sapphire substrate

    Institute of Scientific and Technical Information of China (English)

    NIU Xin-huan; LIU Yu-ling; TAN Bai-mei; HAN Li-ying; ZHANG Jian-xin

    2006-01-01

    Sapphire single crystals are widely used in many areas because of the special physic properties and important application value. As an important substrate material,stringent surface quality requirements,i.e. surface finish and flatness,are required. The use of CMP technique can produce high quality surface finishes at low cost and with fast material removal rates. The sapphire substrate surface is treated by using CMP method. According to sapphire substrate and its product properties,SiO2 sol is chosen as abrasive. The particle size is 15-25 nm and the concentration is 40%. According to the experiment results,pH value is 10.5-11.5. After polishing and cleaning the sapphire surface,the surface roughness was measured by using AFM method and the lowest value of Ra 0.1 nm was obtained. From the results,it can be seen that using such method,the optimal sapphire surface can be gotten,which is advantageous for epitaxial growth and device making-up.

  4. Crystal growth in salt efflorescence

    Science.gov (United States)

    Zehnder, Konrad; Arnold, Andreas

    1989-09-01

    Salt efflorescences strongly affect wall paintings and other monuments. The external factors governing the crystal habits and aggregate forms are studied phenomenologically in laboratory experiments. As salt contaminated materials dry, slats crystallize forming distinct sequences of crystal habits and aggregate forms on and underneath the surfaces. Four phases may be distinguished: (1) Large individual crystals with equilibrium forms grow immersed in a thick solution film; (2) granular crusts of small isometric crystals grow covered by a thin solution film; (3) fibrous crusts of columnar crystals grow from a coherent but thin solution film so that the crystals are in contact with solution only at their base; (4) whiskers grow from isolated spots of very thin solution films into the air. The main factor governing these morphologies is the humidity of the substrate. A porous material cracks while granular crystals (approaching their equilibrium forms) grow within the large pores. As the fissures widen, the habits pass into columnar crystals and then into whiskers. Because this succession corresponds to the crystallization sequence on the substrate surface it can be traced back to the same growth conditions.

  5. Titanium distribution in Ti-sapphire single crystals grown by Czochralski and Verneuil technique

    Science.gov (United States)

    Alombert-Goget, G.; Li, H.; Faria, J.; Labor, S.; Guignier, D.; Lebbou, K.

    2016-01-01

    The distributions of Ti3+ and Ti4+ ions were evaluated by photoluminescence measurement in the wafers cut from different positions of the ingots grown by Czochralski and Verneuil techniques. Particular radial distributions of Ti4+ as function of the position in the ingot were observed in the crystals grown by Verneuil technique different than the crystals grown by Czochralski method.

  6. A first-principles study on Al-doped ZnO growth polarity on sapphire (0001) surface

    Science.gov (United States)

    Yang, Ping; Gao, Qian; Hu, Zhen-Peng; Zhang, Li-Xin

    2016-06-01

    Based on the first-principles method, the polarity inversion mechanism of Al-doped ZnO grown on sapphire (0001) substrate was investigated. This study revealed that the Al dopant tends to float on the surface of the buffer layer and leads to form ZnO nucleation islands of Zn-polarity without changing in-plane orientation. Finally, these islands evolve to wall-like nanostructure with Zn-termination. The results can explain the reason of the polarity inversion phenomenon in the experiment and supply more information for controlling the ZnO growth polarity.

  7. Direct Growth of a-Plane GaN on r-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy

    Science.gov (United States)

    Araki, Masahiro; Mochimizo, Noriaki; Hoshino, Katsuyuki; Tadatomo, Kazuyuki

    2007-02-01

    We have investigated the direct growth of nonpolar a-plane GaN layers on an r-plane sapphire substrate by metalorganic vapor-phase epitaxy (MOVPE). A high-density nucleation of GaN islands was obtained on the r-plane sapphire substrate at the initial stage of the high-temperature growth without a buffer layer, which resulted in a two-dimensional (2D) growth mode. We studied the effects of V/III ratio growth conditions on the surface morphology and growth features of an a-plane GaN layer. The results showed that a high density of pits with an inverse-pyramidal shape were formed at a high V/III ratio, whereas a relatively low density of pits were formed at a low V/III ratio due to the increase in the rate of lateral growth along the c-axis direction. We successfully grew a-plane GaN layers with a flat and pit-free surface using the “two-step growth method”. The method consisted of growing a first layer at a high V/III ratio and growing a second layer at a low V/III ratio. We found that the first layer plays an important role in GaN layer growth. The formation of a void-free GaN layer with sidewall facets in the first step leads to a flat and pit-free layer grown at a high rate of lateral growth along the c-axis direction in the second step.

  8. Growth of Solid Solution Crystals

    Science.gov (United States)

    Lehoczky, S. L.; Szofran, F. R.; Holland, L. R.

    1985-01-01

    The major objective of this program is to determine the conditions under which single crystals of solid solutions can be grown from the melt in a Bridgman configuration with a high degree of chemical homogeneity. The central aim is to assess the role of gravity in the growth process and to explore the possible advantages for growth in the absence of gravity. The alloy system being investigated is the solid solution semiconductor with x-values appropriate for infrared detector applications in Hg sub (1-x) Cd sub x Te the 8 to 14 micro m wavelength region. Both melt and Te-solvent growth are being considered. The study consists of an extensive ground-based experimental and theoretical research effort followed by flight experimentation where appropriate. Experimental facilities have been established for the purification, casting, and crystal growth of the alloy system. Facilities have been also established for the metallurgical, compositional, electric and optical characterization of the alloys. Crystals are being grown by the Bridgman-Stockbarger method and are analyzed by various experimental techniques to evaluate the effects of growth conditions on the longitudinal and radial compositional variations and defect densities in the crystals.

  9. Growth and Characterization of InN Thin Films on Sapphire by MOCVD

    Institute of Scientific and Technical Information of China (English)

    XIE Zi-Li; ZHANG Rong; XIU Xiang-Qian; LIU Bin; LI Liang; HAN Ping; GU Shu-Lin; SHI Yi; ZHENG You-Dou

    2007-01-01

    Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition(MOCVD).By employing three-step layer buffers,the mirror-like layers on two-inch sapphire wafers have been obtained.The structural,optical and electrical characteristics of InN are investigated by x-ray diffraction,scanning electron microscopy,atomic force microscopy,photoluminescence and infrared optical absorpton.The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70 eV at room temperature.The room-temperature Hall mobility and carrier concentration of the film are typically 939 cm2/Vs,and 3.9×1018cm-3,respectively.

  10. Crystallization Growth of Single Crystal Cu by ContinuousCasting

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Crystallization growth of single-crystal Cu by continuous casting has been investigated using selfdesigned horizontal continuous casting equipment and XRD. Experimental results showed that the crystallization plane of (311), (220) and (111) were eliminated sequentially in evolutionary process. The final growth plane of crystal was (200), the direction of crystallization was [100],the growth direction of both sides of the rod inclined to axis, and the degree of deviation of direction [100] from the crystal axis was less than 10. In order to produce high quality single crystal, the solid-liquid interface morphology must be smooth, even be planar.

  11. Direct spontaneous growth and interfacial structural properties of inclined GaN nanopillars on r-plane sapphire

    Science.gov (United States)

    Adikimenakis, A.; Lotsari, A.; Dimitrakopulos, G. P.; Kehagias, Th.; Aretouli, K. E.; Tsagaraki, K.; Androulidaki, M.; Komninou, Ph.; Georgakilas, A.

    2015-06-01

    The spontaneous growth of GaN nanopillars (NPs) by direct plasma-assisted molecular beam epitaxy on nitridated r-plane sapphire substrates has been studied. The emanation of metal-polarity NPs from inside an a-plane nonpolar GaN film was found to depend on both the substrate nitridation and the growth conditions. The density of NPs increased with increasing the duration of the nitridation process and the power applied on the radio-frequency plasma source, as well as the III/V flux ratio, while variation of the first two parameters enhanced the roughness of the substrate's surface. Transmission electron microscopy (TEM) techniques were employed to reveal the structural characteristics of the NPs and their nucleation mechanism from steps on the sapphire surface and/or interfacial semipolar GaN nanocrystals. Lattice strain measurements showed a possible Al enrichment of the first 5-6 monolayers of the NPs. By combining cross-sectional and plan-view TEM observations, the three-dimensional model of the NPs was constructed. The orientation relationship and interfacial accommodation between the NPs and the nonpolar a-plane GaN film were also elucidated. The NPs exhibited strong and narrow excitonic emission, suggesting an excellent structural quality.

  12. Wafer-Scale and Wrinkle-Free Epitaxial Growth of Single-Orientated Multilayer Hexagonal Boron Nitride on Sapphire.

    Science.gov (United States)

    Jang, A-Rang; Hong, Seokmo; Hyun, Chohee; Yoon, Seong In; Kim, Gwangwoo; Jeong, Hu Young; Shin, Tae Joo; Park, Sung O; Wong, Kester; Kwak, Sang Kyu; Park, Noejung; Yu, Kwangnam; Choi, Eunjip; Mishchenko, Artem; Withers, Freddie; Novoselov, Kostya S; Lim, Hyunseob; Shin, Hyeon Suk

    2016-05-11

    Large-scale growth of high-quality hexagonal boron nitride has been a challenge in two-dimensional-material-based electronics. Herein, we present wafer-scale and wrinkle-free epitaxial growth of multilayer hexagonal boron nitride on a sapphire substrate by using high-temperature and low-pressure chemical vapor deposition. Microscopic and spectroscopic investigations and theoretical calculations reveal that synthesized hexagonal boron nitride has a single rotational orientation with AA' stacking order. A facile method for transferring hexagonal boron nitride onto other target substrates was developed, which provides the opportunity for using hexagonal boron nitride as a substrate in practical electronic circuits. A graphene field effect transistor fabricated on our hexagonal boron nitride sheets shows clear quantum oscillation and highly improved carrier mobility because the ultraflatness of the hexagonal boron nitride surface can reduce the substrate-induced degradation of the carrier mobility of two-dimensional materials.

  13. Zeolite crystal growth in space

    Science.gov (United States)

    Sacco, Albert, Jr.; Thompson, Robert W.; Dixon, Anthony G.

    1991-01-01

    The growth of large, uniform zeolite crystals in high yield in space can have a major impact on the chemical process industry. Large zeolite crystals will be used to improve basic understanding of adsorption and catalytic mechanisms, and to make zeolite membranes. To grow large zeolites in microgravity, it is necessary to control the nucleation event and fluid motion, and to enhance nutrient transfer. Data is presented that suggests nucleation can be controlled using chemical compounds (e.g., Triethanolamine, for zeolite A), while not adversely effecting growth rate. A three-zone furnace has been designed to perform multiple syntheses concurrently. The operating range of the furnace is 295 K to 473 K. Teflon-lined autoclaves (10 ml liquid volume) have been designed to minimize contamination, reduce wall nucleation, and control mixing of pre-gel solutions on orbit. Zeolite synthesis experiments will be performed on USML-1 in 1992.

  14. Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE.

    Science.gov (United States)

    Krishna, Shibin; Aggarwal, Neha; Mishra, Monu; Maurya, K K; Singh, Sandeep; Dilawar, Nita; Nagarajan, Subramaniyam; Gupta, Govind

    2016-03-21

    The relationship of the growth temperature with stress, defect states, and electronic structure of molecular beam epitaxy grown GaN films on c-plane (0001) sapphire substrates is demonstrated. A minimum compressively stressed GaN film is grown by tuning the growth temperature. The correlation of dislocations/defects with the stress relaxation is scrutinized by high-resolution X-ray diffraction and photoluminescence measurements which show a high crystalline quality with significant reduction in the threading dislocation density and defect related bands. A substantial reduction in yellow band related defect states is correlated with the stress relaxation in the grown film. Temperature dependent Raman analysis shows the thermal stability of the stress relaxed GaN film which further reveals a downshift in the E2 (high) phonon frequency owing to the thermal expansion of the lattice at elevated temperatures. Electronic structure analysis reveals that the Fermi level of the films is pinned at the respective defect states; however, for the stress relaxed film it is located at the charge neutrality level possessing the lowest electron affinity. The analysis demonstrates that the generated stress not only affects the defect states, but also the crystal quality, surface morphology and electronic structure/properties.

  15. Crystal growth of various ruthenates

    Energy Technology Data Exchange (ETDEWEB)

    Kunkemoeller, Stefan; Braden, Markus [II. Physikalisches Institut, Universitaet zu Koeln (Germany); Nugroho, Agung [Institut Teknologi Bandung (Indonesia)

    2013-07-01

    Ruthenates of the Ruddlesdon-Popper series exhibit a variety of interesting phenomena ranging from unconventional superconductivity to orbitally polarized Mott insulators. Unfortunately the crystal growth of most of these ruthenates is extremely difficult partially due to the high evaporation of ruthenium; this strongly limits the research on these fascinating materials. We have started to grow single crystals of layered and perovskite ruthenates by the travelling floating-zone method using a Canon SC1-MDH mirror furnace. For the layered Ca{sub 2-x}Sr{sub x}RuO{sub 4} series we focused first on the range of concentration where recent My-SR experiments reveal spin-density wave ordering to occur at relatively high temperature and with a sizeable ordered moment. Good quality crystals of Ca{sub 1.5}Sr{sub 0.5}RuO{sub 4} can be obtained, when an excess of 15 percent of ruthenium is added to the initial preparation of the rod and when a high growth speed up to 40mm/h is used. Even slight modifications of the growing conditions result in large amounts of (Sr/Ca)RuO{sub 3} and (Sr/Ca){sub 3}Ru{sub 2}O{sub 7} intergrowth phases. First attempts to grow perovskite and double-layered ruthenates are discussed as well.

  16. Growth of Strain Free GaN Layers on (0001) Oriented Sapphire by Using Quasi-Porous GaN Template

    Institute of Scientific and Technical Information of China (English)

    XIE Xin-Jian; CHEN Jia-Rong; CAO Xian-Cun; ZHONG Fei; QIU Kai; LIU Gui-Feng; YIN Zhi-Jun; WANG Yu-Qi; LI Xin-Hua; JI Chang-Jian; HAN Qi-Fen

    2006-01-01

    We report the reduced-strain gallium-nitride (GaN) epitaxial growth on (0001) oriented sapphire by using quasi-porous GaN template. A GaN film in thickness of about 1μm was initially grown on a (0001) sapphire substrate by molecular beam epitaxy. Then it was dealt by putting, into 45% NaOH solution at 100°C for Wmin. By this process a quasi-porous GaN Rim was formed. An epitaxial GaN layer was grown on the porous GaN layer at 1050°C in the hydride vapour phase epitaxy reactor. The epitaxial layer grown on the porous GaN is found to have no cracks on the surface. That is much improved from many cracks on the surface of the GaN epitaxial layer grown on the sapphire as the same as on GaN buffer directly.

  17. Nanostructured sapphire vicinal surfaces as templates for the growth of self-organized oxide nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Thune, E., E-mail: elsa.thune@unilim.fr [Laboratoire Sciences des Procedes Ceramiques et de Traitements de Surface (SPCTS), UMR CNRS 6638, ENSCI, 47-73 Avenue Albert Thomas, F-87065 Limoges Cedex (France); Boulle, A. [Laboratoire Sciences des Procedes Ceramiques et de Traitements de Surface (SPCTS), UMR CNRS 6638, ENSCI, 47-73 Avenue Albert Thomas, F-87065 Limoges Cedex (France); Babonneau, D.; Pailloux, F. [Laboratoire de Physique des Materiaux (PHYMAT), UMR CNRS 6630, Universite de Poitiers, Boulevard Marie et Pierre Curie - Teleport 2, BP 30179, F-86962 Futuroscope - Chasseneuil Cedex (France); Hamd, W.; Guinebretiere, R. [Laboratoire Sciences des Procedes Ceramiques et de Traitements de Surface (SPCTS), UMR CNRS 6638, ENSCI, 47-73 Avenue Albert Thomas, F-87065 Limoges Cedex (France)

    2009-11-15

    Vicinal substrates of sapphire with miscut angle of 10 deg. from the (0 0 1) planes towards the [1 1 0] direction have been annealed in air in the range from 1000 to 1500 deg. C. The behaviour of these surfaces has been characterized as a function of the temperature and the thermal treatment time by Atomic Force Microscopy observations. A thermal treatment at 1250 deg. C allows to stabilize a surface made of periodically spaced nanosized step-bunches. Such stepped surfaces were used as template to grow self-patterned epitaxial oxide nanoparticles by thermal annealing of yttria-stabilized zirconia thin films produced by sol-gel dip-coating. Grazing Incidence Small Angle X-ray Scattering and High-Resolution Transmission Electron Microscopy were used to study the morphology of the nanoparticles and their epitaxial relationships with the substrate.

  18. Introduction to crystal growth and characterization

    CERN Document Server

    Benz, Klaus-Werner

    2014-01-01

    This new textbook provides for the first time a comprehensive treatment of the basics of contemporary crystallography and crystal growth in a single volume. The reader will be familiarized with the concepts for the description of morphological and structural symmetry of crystals. The architecture of crystal structures of selected inorganic and molecular crystals is illustrated. The main crystallographic databases as data sources of crystal structures are described. Nucleation processes, their kinetics and main growth mechanism will be introduced in fundamentals of crystal growth. Some phase d

  19. Pressure-Reduction Technique for Crystal Growth

    Science.gov (United States)

    Shlichta, P. J.

    1981-01-01

    Large crystals grown by varying pressure rather than temperature. In constant temerature pressure-reduction process crystal growth promoted as solubility decreases by factor of more than 10. Technique used to study crystal growth kinetics by "pressure wave"" analog of conventional "thermal wave" experiments. Technique has advantages of faster response and freedom from convective interference.

  20. Controlled growth of semiconductor crystals

    Science.gov (United States)

    Bourret-Courchesne, Edith D.

    1992-01-01

    A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

  1. Coordination polyhedron growth mechanism model and growth habit of crystals

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    A new growth mechanism model, coordination polyhedron growth mechanism model, is introduced from the angle of the coordination of anion and cation to each other at the interface. It is pointed out that the force driving the growth unit to enter the crystal lattice is the electrostatic attraction force between ions, whose relative size can be approximately measured by the electrostatic bond strength (EBS) that reaches a nearest neighbor anion (or cation) in the parent phase from a cation (or anion) at the interface. The growth habits of NaCl, ZnS, CaF2 and CsI crystals are discussed, and a new growth habit rule is proposed as follows. When the growth rate of a crystal is determined by the step generation rate, the growth habit of this crystal is related to the coordination number of the ion with the smallest coordination rate at the interface of various crystal faces. The smaller the coordination number of the ion at the interface, the faster the growth rate of corresponding crystal face. When the growth of a crystal depends on the step movement rate, the growth habit of this crystal is related to the density of the ion with the smallest coordination rate at the interface of various crystal faces. The smaller the densities of the ion at the interface is, the faster the growth rate of corresponding crystal face will be.

  2. Measurements of Protein Crystal Face Growth Rates

    Science.gov (United States)

    Gorti, S.

    2014-01-01

    Protein crystal growth rates will be determined for several hyperthermophile proteins.; The growth rates will be assessed using available theoretical models, including kinetic roughening.; If/when kinetic roughening supersaturations are established, determinations of protein crystal quality over a range of supersaturations will also be assessed.; The results of our ground based effort may well address the existence of a correlation between fundamental growth mechanisms and protein crystal quality.

  3. Polar Growth Habit of KABO Crystal

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    The polar growth habit of KABO crystal was discussed by the growth-units model of anionic coordination-polyhedra (ACP), and the relationship between stabilities of incorporation of those growth-units into various group faces and their corresponding morphologies was studied. It is put forward that the growth interface of crystal will be concave when negative plane is used as growth interface. Concave growth interface is very unfavorable for the quality of the crystal, because it is unsuitable for the transfer of the latent heat and impurities released during the deposition.

  4. Effect of initial growth on the quality of GaN on patterned sapphire substrate with ex situ physical vapor deposition AlN seed layer

    Science.gov (United States)

    Wang, Hongbo; Daigo, Yoshiaki; Seino, Takuya; Ishibashi, Sotaro; Sugiyama, Masakazu

    2016-10-01

    GaN epitaxy was explored on a cone-patterned sapphire substrate with an ex situ AlN seed layer prepared by physical vapor deposition (PVD). The effect of initial growth on the quality of the GaN epilayer was investigated using both ex situ PVD-AlN seed layers with various thicknesses and various deposition parameters such as temperature and reactor pressure in metal-organic vapor-phase epitaxy (MOVPE). It was found that the quality of GaN is insensitive to both the thickness of the ex situ PVD-AlN seed layer and the MOVPE growth conditions. A high-quality GaN film was realized, as indicated by room-temperature CL mapping (dark spot density of 1.6 × 108 cm-2), on a patterned sapphire substrate with a wide growth condition window by simply employing an ex situ PVD-AlN seed layer.

  5. Growth mechanism and electronic properties of epitaxial In{sub 2}O{sub 3} films on sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Ch. Y.; Kirste, L.; Roehlig, C. C.; Koehler, K.; Cimalla, V.; Ambacher, O. [Fraunhofer-Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Morales, F. M.; Manuel, J. M.; Garcia, R. [Departamento de Ciencia de los Materiales e Ingenieria Metalurgica y Quimica Inorganica, Facultad de Ciencias, Universidad de Cadiz, Puerto Real, Cadiz 11510 (Spain)

    2011-11-01

    In this work, we report on the epitaxial growth of high-quality cubic indium oxide thick films on c-plane sapphire substrates using a two-step growth process. The epitaxial relationship of In{sub 2}O{sub 3} on (0001) Al{sub 2}O{sub 3} has been investigated. The (222) plane spacing and lattice parameter of a most strain-relaxed high-quality In{sub 2}O{sub 3} film have been determined to be 292.58 pm and 1013.53 pm, respectively. The electronic properties in dependence of the film thickness are interpreted using a three-region model. The density at the surface and interface totals (3.3{+-}1.5)x10{sup 13}cm{sup -2}, while the background electron density in the bulk was determined to be (2.4{+-}0.5)x10{sup 18}cm{sup -3}. Furthermore, post treatments such as irradiation via ultraviolet light and ozone oxidation have been found to influence only the surface layer, while the bulk electronic properties remain unchanged.

  6. Economic analysis of crystal growth in space

    Science.gov (United States)

    Ulrich, D. R.; Chung, A. M.; Yan, C. S.; Mccreight, L. R.

    1972-01-01

    Many advanced electronic technologies and devices for the 1980's are based on sophisticated compound single crystals, i.e. ceramic oxides and compound semiconductors. Space processing of these electronic crystals with maximum perfection, purity, and size is suggested. No ecomonic or technical justification was found for the growth of silicon single crystals for solid state electronic devices in space.

  7. Crystal Shape Evolution in Detached Bridgman Growth

    Science.gov (United States)

    Volz, M. P.; Mazuruk, K.

    2013-01-01

    Detached (or dewetted) Bridgman crystal growth defines that process in which a gap exists between a growing crystal and the crucible wall. Existence of the gap provides several advantages, including no sticking of the crystal to the crucible wall, reduced thermal and mechanical stresses, reduced dislocations, and no heterogeneous nucleation by the crucible. Numerical calculations are used to determine the conditions in which a gap can exist. According to crystal shape stability theory, only some of these gap widths will be dynamically stable. Beginning with a crystal diameter that differs from stable conditions, the transient crystal growth process is analyzed. In microgravity, dynamic stability depends only on capillary effects and is decoupled from heat transfer. Depending on the initial conditions and growth parameters, the crystal shape will evolve towards the crucible wall, towards a stable gap width, or towards the center of the crucible, collapsing the meniscus. The effect of a tapered crucible on dynamic stability is also described.

  8. Crystal growth as an excitable medium.

    Science.gov (United States)

    Cartwright, Julyan H E; Checa, Antonio G; Escribano, Bruno; Sainz-Díaz, C Ignacio

    2012-06-28

    Crystal growth has been widely studied for many years, and, since the pioneering work of Burton, Cabrera and Frank, spirals and target patterns on the crystal surface have been understood as forms of tangential crystal growth mediated by defects and by two-dimensional nucleation. Similar spirals and target patterns are ubiquitous in physical systems describable as excitable media. Here, we demonstrate that this is not merely a superficial resemblance, that the physics of crystal growth can be set within the framework of an excitable medium, and that appreciating this correspondence may prove useful to both fields. Apart from solid crystals, we discuss how our model applies to the biomaterial nacre, formed by layer growth of a biological liquid crystal.

  9. InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition.

    Energy Technology Data Exchange (ETDEWEB)

    Crawford, Mary Hagerott; Olson, S. M. (Aonex Technologies Inc., Pasadena, CA); Banas, M.; Park, Y. -B. (Aonex Technologies Inc., Pasadena, CA); Ladous, C. (Aonex Technologies Inc., Pasadena, CA); Russell, Michael J.; Thaler, Gerald; Zahler, J. M. (Aonex Technologies Inc., Pasadena, CA); Pinnington, T. (Aonex Technologies Inc., Pasadena, CA); Koleske, Daniel David; Atwater, Harry A. (Aonex Technologies Inc., Pasadena, CA)

    2008-06-01

    We report growth of InGaN/GaN multi-quantum well (MQW) and LED structures on a novel composite substrate designed to eliminate the coefficient of thermal expansion (CTE) mismatch problems which impact GaN growth on bulk sapphire. To form the composite substrate, a thin sapphire layer is wafer-bonded to a polycrystalline aluminum nitride (P-AlN) support substrate. The sapphire layer provides the epitaxial template for the growth; however, the thermo-mechanical properties of the composite substrate are determined by the P-AlN. Using these substrates, thermal stresses associated with temperature changes during growth should be reduced an order of magnitude compared to films grown on bulk sapphire, based on published CTE data. In order to test the suitability of the substrates for GaN LED growth, test structures were grown by metalorganic chemical vapor deposition (MOCVD) using standard process conditions for GaN growth on sapphire. Bulk sapphire substrates were included as control samples in all growth runs. In situ reflectance monitoring was used to compare the growth dynamics for the different substrates. The material quality of the films as judged by X-ray diffraction (XRD), photoluminescence and transmission electron microscopy (TEM) was similar for the composite substrate and the sapphire control samples. Electroluminescence was obtained from the LED structure grown on a P-AlN composite substrate, with a similar peak wavelength and peak width to the control samples. XRD and Raman spectroscopy results confirm that the residual strain in GaN films grown on the composite substrates is dramatically reduced compared to growth on bulk sapphire substrates.

  10. Transport and Growth Kinetics in Microgravity Protein Crystal Growth

    Science.gov (United States)

    Otalora, F.; Garcia-Ruiz, J. M.; Carotenuto, L.; Castagnolo, D.; Novella, M. L.; Chernov, A. A.

    2002-01-01

    The dynamic coupling between mass transport and incorporation of growth units into the surface of a crystal growing from solution in microgravity is used to derive quantitative information on the crystal growth kinetics. To this end, new procedures for experiment preparation, interferometric data processing and model fitting have been developed. The use of experimental data from the bulk diffusive maw transport together with a model for steady state stagnant crystal growth allows the detailed quantitative understanding of the kinetics of both the concentration depletion zone around the crystal and the growth of the crystal interface. The protein crystal used in the experiment is shown to be growing in the mixed kinetic regime (0.2 x 10(exp -6) centimeters per second less than beta R/D less than 0.9 x 10(exp -6) centimeters per second).

  11. Growth of single crystals of BaFe12O19 by solid state crystal growth

    Science.gov (United States)

    Fisher, John G.; Sun, Hengyang; Kook, Young-Geun; Kim, Joon-Seong; Le, Phan Gia

    2016-10-01

    Single crystals of BaFe12O19 are grown for the first time by solid state crystal growth. Seed crystals of BaFe12O19 are buried in BaFe12O19+1 wt% BaCO3 powder, which are then pressed into pellets containing the seed crystals. During sintering, single crystals of BaFe12O19 up to ∼130 μm thick in the c-axis direction grow on the seed crystals by consuming grains from the surrounding polycrystalline matrix. Scanning electron microscopy-energy dispersive spectroscopy analysis shows that the single crystal and the surrounding polycrystalline matrix have the same chemical composition. Micro-Raman scattering shows the single crystal to have the BaFe12O19 structure. The optimum growth temperature is found to be 1200 °C. The single crystal growth behavior is explained using the mixed control theory of grain growth.

  12. Molecular beam epitaxy growth and optical properties of single crystal Zn3N2 films

    Science.gov (United States)

    Wu, Peng; Tiedje, T.; Alimohammadi, H.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Wang, Cong

    2016-10-01

    Single crystal Zn3N2 films with (100) orientation have been grown by plasma-assisted molecular beam epitaxy on MgO and A-plane sapphire substrates with in situ optical reflectance monitoring of the growth. The optical bandgap was found to be 1.25-1.28 eV and an electron Hall mobility as high as 395 cm2 V-1 s-1 was measured. The films were n-type with carrier concentrations in the 1018-1019 cm-3 range.

  13. Promotion of protein crystal growth by actively switching crystal growth mode via femtosecond laser ablation

    Science.gov (United States)

    Tominaga, Yusuke; Maruyama, Mihoko; Yoshimura, Masashi; Koizumi, Haruhiko; Tachibana, Masaru; Sugiyama, Shigeru; Adachi, Hiroaki; Tsukamoto, Katsuo; Matsumura, Hiroyoshi; Takano, Kazufumi; Murakami, Satoshi; Inoue, Tsuyoshi; Yoshikawa, Hiroshi Y.; Mori, Yusuke

    2016-11-01

    Large single crystals with desirable shapes are essential for various scientific and industrial fields, such as X-ray/neutron crystallography and crystalline devices. However, in the case of proteins the production of such crystals is particularly challenging, despite the efforts devoted to optimization of the environmental, chemical and physical parameters. Here we report an innovative approach for promoting the growth of protein crystals by directly modifying the local crystal structure via femtosecond laser ablation. We demonstrate that protein crystals with surfaces that are locally etched (several micrometers in diameter) by femtosecond laser ablation show enhanced growth rates without losing crystal quality. Optical phase-sensitive microscopy and X-ray topography imaging techniques reveal that the local etching induces spiral growth, which is energetically advantageous compared with the spontaneous two-dimensional nucleation growth mode. These findings prove that femtosecond laser ablation can actively switch the crystal growth mode, offering flexible control over the size and shape of protein crystals.

  14. Effects of impurities on crystal growth in fructose crystallization

    Science.gov (United States)

    Chu, Y. D.; Shiau, L. D.; Berglund, K. A.

    1989-10-01

    The influence of impurities on the crystallization of anhydrous fructose from aqueous solution was studied. The growth kinetics of fructose crystals in the fructose-water-glucose and fructose-water-difructose dianhydrides systems were investigated using photomicroscopic contact nucleation techniques. Glucose is the major impurity likely to be present in fructose syrup formed during corn wet milling, while several difructose dianhydrides are formed in situ under crystallization conditions and have been proposed as a cause in the decrease of overall yields. Both sets of impurities were found to cause inhibition of crystal growth, but the mechanisms responsible in each case are different. It was found that the presence of glucose increases the solubility of fructose in water and thus lowers the supersaturation of the solution. This is probably the main effect responsible for the decrease of crystal growth. Since the molecular structures of difructose dianhydrides are similar to that of fructose, they are probably "tailor-made" impurities. The decrease of crystal growth is probably caused by the incorporation of these impurities into or adsorption to the crystal surface which would accept fructose molecules in the orientation that existed in the difructose dianhydride.

  15. Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Kyuseung Lee

    2016-04-01

    Full Text Available In this study, self-assembled inclined (1-10-3-oriented GaN nanorods (NRs were grown on nanoimprinted (10-10 m-sapphire substrates using catalyst-free metal-organic chemical vapor deposition. According to X-ray phi-scans, the inclined GaN NRs were tilted at an angle of ∼57.5° to the [10-10]sapp direction. Specifically, the GaN NRs grew in a single inclined direction to the [11-20]sapp. Uni-directionally inclined NRs were formed through the one-sided (10-11-faceted growth of the interfacial a-GaN plane layer. It was confirmed that a thin layer of a-GaN was formed on r-facet nanogrooves of the m-sapphire substrate by nitridation. The interfacial a-GaN nucleation affected both the inclined angle and the growth direction of the inclined GaN NRs. Using X-ray diffraction and selective area electron diffraction, the epitaxial relationship between the inclined (1-10-3 GaN NRs and interfacial a-GaN layer on m-sapphire substrates was systematically investigated. Moreover, the inclined GaN NRs were observed to be mostly free of stacking fault-related defects using high-resolution transmission electron microscopy.

  16. Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kyuseung; Chae, Sooryong; Jang, Jongjin; Min, Daehong; Kim, Jaehwan; Nam, Okhyun, E-mail: ohnam@kpu.ac.kr [Convergence Center for Advanced Nano Semiconductor (CANS), Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, 15073 (Korea, Republic of)

    2016-04-15

    In this study, self-assembled inclined (1-10-3)-oriented GaN nanorods (NRs) were grown on nanoimprinted (10-10) m-sapphire substrates using catalyst-free metal-organic chemical vapor deposition. According to X-ray phi-scans, the inclined GaN NRs were tilted at an angle of ∼57.5° to the [10-10]{sub sapp} direction. Specifically, the GaN NRs grew in a single inclined direction to the [11-20]{sub sapp}. Uni-directionally inclined NRs were formed through the one-sided (10-11)-faceted growth of the interfacial a-GaN plane layer. It was confirmed that a thin layer of a-GaN was formed on r-facet nanogrooves of the m-sapphire substrate by nitridation. The interfacial a-GaN nucleation affected both the inclined angle and the growth direction of the inclined GaN NRs. Using X-ray diffraction and selective area electron diffraction, the epitaxial relationship between the inclined (1-10-3) GaN NRs and interfacial a-GaN layer on m-sapphire substrates was systematically investigated. Moreover, the inclined GaN NRs were observed to be mostly free of stacking fault-related defects using high-resolution transmission electron microscopy.

  17. Growth and characterization of VO{sub 2}/p-GaN/sapphire heterostructure with phase transition properties

    Energy Technology Data Exchange (ETDEWEB)

    Bian, Jiming, E-mail: jmbian@dlut.edu.cn [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050. China (China); Wang, Minhuan; Miao, Lihua; Li, Xiaoxuan; Luo, Yingmin [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Zhang, Dong [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); New Energy Source Research Center of Shenyang Institute of Engineering, Shenyang 110136 (China); Zhang, Yuzhi [Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050. China (China)

    2015-12-01

    Highlights: • VO{sub 2} films were deposited on p-GaN/sapphire substrates by PLD. • A well-defined VO{sub 2}/p-GaN/sapphire interface was observed. • The valence state of V in VO{sub 2} films was confirmed by XPS analyses. • A distinct reversible SMT phase transition behavior was observed. - Abstract: High quality pure phase VO{sub 2} films were deposited on p-GaN/sapphire substrates by pulsed laser deposition (PLD). A well-defined interface with dense and uniform morphology was observed in the as-grown VO{sub 2}/p-GaN/sapphire heterostructure. The X-ray photoelectron spectroscopy (XPS) analyses confirmed the valence state of vanadium (V) in VO{sub 2} films was principally composed of V{sup 4+} with trace amount of V{sup 5+}, no other valence state of V was detected. Meanwhile, a distinct reversible semiconductor-to-metal (SMT) phase transition with resistance change up to nearly three orders of magnitude was observed in the temperature dependent electrical resistance measurement, which was comparable to the high quality VO{sub 2} film grown directly on sapphire substrates. Our present findings will give a deeper insight into the physical mechanism behind the exotic characteristics of VO{sub 2}/p-GaN heterostructure, and further motivate research in novel devices with combined functional properties of both correlated oxide and wide bandgap nitride semiconductors.

  18. Photographic appraisal of crystal lattice growth technique

    Directory of Open Access Journals (Sweden)

    Kapoor D

    2005-01-01

    Full Text Available Concept of creating mechanical retention for bonding through crystal growth has been successfully achieved in the present study. By using polyacrylic acid, sulphated with sulphuric acid as etchant, abundant crystal growth was demonstrated. Keeping in view the obvious benefits of crystal growth technique, the present SEM study was aimed to observe and compare the changes brought about by different etching agents (phosphoric acid, polyacrylic acid and polyacrylic acid sulphated and to evaluate their advantages and disadvantages in an attempt to reduce iatrogenic trauma caused due to surface enamel alteration. Control and experimental groups were made of 24 and 30 premolars, respectively, for scanning electron microscopic appraisal of normal unetched and etched enamel surface and fracture site and finished surface evaluation. When compared with conventional phosphoric acid and weaker polyacrylic acid, investigations indicated that crystal growth treatment on enamel surface caused minimal iatrogenic trauma and surface alteration were restored to the original untreated condition to a large extent.

  19. Illusory spirals and loops in crystal growth.

    Science.gov (United States)

    Shtukenberg, Alexander G; Zhu, Zina; An, Zhihua; Bhandari, Misha; Song, Pengcheng; Kahr, Bart; Ward, Michael D

    2013-10-22

    The theory of dislocation-controlled crystal growth identifies a continuous spiral step with an emergent lattice displacement on a crystal surface; a mechanistic corollary is that closely spaced, oppositely winding spirals merge to form concentric loops. In situ atomic force microscopy of step propagation on pathological L-cystine crystals did indeed show spirals and islands with step heights of one lattice displacement. We show by analysis of the rates of growth of smaller steps only one molecule high that the major morphological spirals and loops are actually consequences of the bunching of the smaller steps. The morphology of the bunched steps actually inverts the predictions of the theory: Spirals arise from pairs of dislocations, loops from single dislocations. Only through numerical simulation of the growth is it revealed how normal growth of anisotropic layers of molecules within the highly symmetrical crystals can conspire to create features in apparent violation of the classic theory.

  20. The Growth of Large Single Crystals.

    Science.gov (United States)

    Baer, Carl D.

    1990-01-01

    Presented is an experiment which demonstrates principles of experimental design, solubility, and crystal growth and structure. Materials, procedures and results are discussed. Suggestions for adapting this activity to the high school laboratory are provided. (CW)

  1. Optical properties of ultra-thin (layers on c-sapphire substrates with different initial growth conditions measured by surface-plasmon enhanced Raman scattering.

    Science.gov (United States)

    Kim, Ho-Jong; Kim, Tae-Soo; Lee, Jin-Gyu; Song, Jung Hoon

    2014-11-01

    We have carried out surface-plasmon enhanced Raman spectroscopy (SERS) on 30 nm-thick GaN samples grown at various temperatures, in order to investigate the properties of ultra thin GaN films on sapphire. We found that the properties, such as the strain and the free-carrier density of the thin layers, were sensitively affected by the growth temperatures. Our results show that SERS, by selectively enhancing the Raman signal near the surface, can be a very useful technique to investigate the optical properties of ultra-thin GaN films and their initial growth mode.

  2. A visualization of threading dislocations formation and dynamics in mosaic growth of GaN-based light emitting diode epitaxial layers on (0001) sapphire

    Science.gov (United States)

    Ravadgar, P.; Horng, R. H.; Ou, S. L.

    2012-12-01

    A clear visualization of the origin and characteristics of threading dislocations (TDs) of GaN-based light emitting diode epitaxial layers on (0001) sapphire substrates have been carried out. Special experimental set up and chemical etchant along with field emission scanning electron microscopy are employed to study the dynamics of GaN TDs at different growth stages. Cross-sectional transmission electron microscopy analysis visualized the formation of edge TDs is arising from extension of coalescences at boundaries of different tilting-twining nucleation grains "mosaic growth." Etch pits as representatives of edge TDs are in agreement with previous theoretical models and analyses of TDs core position and characteristics.

  3. Crystal growth and structural analysis of zirconium sulphoselenide single crystals

    Indian Academy of Sciences (India)

    K R Patel; R D Vaidya; M S Dave; S G Patel

    2008-08-01

    A series of zirconium sulphoselenide (ZrSSe3–, where = 0, 0.5, 1, 1.5, 2, 2.5, 3) single crystals have been grown by chemical vapour transport technique using iodine as a transporting agent. The optimum condition for the growth of these crystals is given. The stoichiometry of the grown crystals were confirmed on the basis of energy dispersive analysis by X-ray (EDAX) and the structural characterization was accomplished by X-ray diffraction (XRD) studies. The crystals are found to possess monoclinic structure. The lattice parameters, volume, particle size and X-ray density have been carried out for these crystals. The effect of sulphur proportion on the lattice parameter, unit cell volume and X-ray density in the series of ZrSSe3– single crystals have been studied and found to decrease in all these parameters with rise in sulphur proportion. The grown crystals were examined under optical zoom microscope for their surface topography study. Hall effect measurements were carried out on grown crystals at room temperature. The negative value of Hall coefficient implies that these crystals are -type in nature. The conductivity is found to decrease with increase of sulphur content in the ZrSSe3– series. The electrical resistivity parallel to c-axis as well as perpendicular to -axis have been carried out in the temperature range 303–423 K. The results obtained are discussed in detail.

  4. Vapor Crystal Growth (VCG) experiment Cell

    Science.gov (United States)

    1992-01-01

    The image shows a test cell of Crystal Growth experiment inside the Vapor Crystal Growth System (VCGS) furnace aboard the STS-42, International Microgravity Laboratory-1 (IML-1), mission. The goal of IML-1, a pressurized marned Spacelab module, was to explore in depth the complex effects of weightlessness of living organisms and materials processing. More than 200 scientists from 16 countires participated in the investigations.

  5. Technology of gallium nitride crystal growth

    CERN Document Server

    Ehrentraut, Dirk; Bockowski, Michal

    2010-01-01

    This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.

  6. On growth rate hysteresis and catastrophic crystal growth

    Science.gov (United States)

    Ferreira, Cecília; Rocha, Fernando A.; Damas, Ana M.; Martins, Pedro M.

    2013-04-01

    Different crystal growth rates as supersaturation is increasing or decreasing in impure media is a phenomenon called growth rate hysteresis (GRH) that has been observed in varied systems and applications, such as protein crystallization or during biomineralization. We have recently shown that the transient adsorption of impurities onto newly formed active sites for growth (or kinks) is sensitive to the direction and rate of supersaturation variation, thus providing a possible explanation for GRH [6]. In the present contribution, we expand on this concept by deriving the analytical expressions for transient crystal growth based on the energetics of growth hillock formation and kink occupation by impurities. Two types of GRH results are described according to the variation of kink density with supersaturation: for nearly constant density, decreasing or increasing supersaturation induce, respectively, growth promoting or inhibiting effects relative to equilibrium conditions. This is the type of GRH measured by us during the crystallization of egg-white lysozyme. For variable kink density, slight changes in the supersaturation level may induce abrupt variations in the crystal growth rate. Different literature examples of this so-called 'catastrophic' crystal growth are discussed in terms of their fundamental consequences.

  7. Historical aspects of crystal growth technology

    Science.gov (United States)

    Scheel, Hans J.

    2000-04-01

    The father of crystal fabrication technology is A. Verneuil with his flame-fusion growth method 1902. His principles of nucleation and growth control are adapted in most later growth methods from melt. The Czochralski method was essentially developed by Teal, Little and Dash. The multidisciplinary nature of crystal growth and epitaxy technology and the complex multiparameter processes, and also the scaling problem, have impeded the scientific development of this important area. Only recently it was possible to solve the striation problem and to understand the control of epitaxial growth modes for achieving structurally perfect layers of GaAs and high- Tc superconductors with atomically flat surfaces. The formation of crystal growth and epitaxy engineers and scientists as well as centers of excellence are necessary in order to develop crystal and epilayer fabrication technologies required for development of highest-efficiency white light-emitting diodes and photovoltaic solar cells for energy-saving lighting and as alternative source of energy. Also laser-fusion energy and other high technologies have to wait for progress in crystal growth technology.

  8. Crystal Growth Behaviors of Silicon during Melt Growth Processes

    Directory of Open Access Journals (Sweden)

    Kozo Fujiwara

    2012-01-01

    Full Text Available It is imperative to improve the crystal quality of Si multicrystal ingots grown by casting because they are widely used for solar cells in the present and will probably expand their use in the future. Fine control of macro- and microstructures, grain size, grain orientation, grain boundaries, dislocation/subgrain boundaries, and impurities, in a Si multicrystal ingot, is therefore necessary. Understanding crystal growth mechanisms in melt growth processes is thus crucial for developing a good technology for producing high-quality Si multicrystal ingots for solar cells. In this review, crystal growth mechanisms involving the morphological transformation of the crystal-melt interface, grain boundary formation, parallel-twin formation, and faceted dendrite growth are discussed on the basis of the experimental results of in situ observations.

  9. Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

    Science.gov (United States)

    Choi, Sang; King, Glen; Park, Yeonjoon

    2009-01-01

    SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations. This innovation utilizes newly developed rhombohedral epitaxy of cubic semiconductors on trigonal substrates in order to solve the lattice mismatch problem of SiGe by using trigonal single crystals like sapphire (Al2O3) as substrate to give a unique growth-orientation to the SiGe layer, which is automatically controlled at the interface upon sapphire (0001). This technology is different from previous silicon on insulator (SOI) or SGOI (SiGe on insulator) technologies that use amorphous SiO2 as the growth plane. A cubic semiconductor crystal is a special case of a rhombohedron with the inter-planar angle, alpha = 90 deg. With a mathematical transformation, all rhombohedrons can be described by trigonal crystal lattice structures. Therefore, all cubic lattice constants and crystal planes (hkl) s can be transformed into those of trigonal crystal parameters. These unique alignments enable a new opportunity of perfect lattice matching conditions, which can eliminate misfit dislocations. Previously, these atomic alignments were thought to be impossible or very difficult. With the invention of a new x-ray diffraction measurement method here, growth of cubic semiconductors on trigonal crystals became possible. This epitaxy and lattice-matching condition can be applied not only to SiGe (111)/sapphire (0001) substrate relations, but also to other crystal structures and other materials, including similar crystal structures which have pointgroup rotational symmetries by 120 because the cubic (111) direction has 120 rotational symmetry. The use of slightly miscut (less than

  10. INTERFACIAL MASS TRANSPORT IN OXIDE CRYSTAL GROWTH

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    @@ A space high temperature in situobservation instrument (SHITISOI) is dedicated to visualize and record the whole growth process of oxide crystal in high temperature melts and solutions. Model experiments using transparent liquids such as KNbO3,Li2B4O7+KNbO3 were chosen to investigate effects of interracial mass transport in oxide crystal growth. For the scaling of the coupled velocity, heat and concentration fields in KNbO3 crystal growth, a rotating crystal growth process was performed and the widths of interfacial concentration, heat and momentum transition zones (The "boundary layers") are obtained, which are 7.5×10-a, 8.6×10-2 and 4.4×10-1 cm,respectively. Hence one can expect that interfacial concentration gradient will be confined to a narrow layer and in region of major concentration change at the in terface. In order to study a mechanism based on the interfacial mass transport resulting from hydrodynamics, the growth of KNbO3 grain in high temperature Li2B4O7 and KNbO3 solutin was studied. The result shows that the pivotal feature in the KNbO3 crystal growth is the initiated by KNbO3 solute surface tension gra dient which is caused by the slow diffusion of KNbO3 solutes. Direct comparison of the model predictions and experimental observed phenomena demonstrate the predictive capability of this model.

  11. Convective flow effects on protein crystal growth

    Science.gov (United States)

    Rosenberger, Franz

    1995-01-01

    During the fifth semi-annual period under this grant we have pursued the following activities: (1) Characterization of the purity and further purification of lysozyme solutions, these efforts are summarized in Section 2; (2) Crystal growth morphology and kinetics studies with tetragonal lysozyme, our observation on the dependence of lysozyme growth kinetics on step sources and impurities has been summarized in a manuscript which was accepted for publication in the Journal of Crystal Growth; (3) Numerical modelling of the interaction between bulk transport and interface kinetics, for a detailed summary of this work see the manuscript which was accepted for publication in the Journal of Crystal Growth; and (4) Light scattering studies, this work has been summarized in a manuscript that has been submitted for publication to the Journal of Chemical Physics.

  12. Method for solid state crystal growth

    Science.gov (United States)

    Nolas, George S.; Beekman, Matthew K.

    2013-04-09

    A novel method for high quality crystal growth of intermetallic clathrates is presented. The synthesis of high quality pure phase crystals has been complicated by the simultaneous formation of both clathrate type-I and clathrate type-II structures. It was found that selective, phase pure, single-crystal growth of type-I and type-II clathrates can be achieved by maintaining sufficient partial pressure of a chemical constituent during slow, controlled deprivation of the chemical constituent from the primary reactant. The chemical constituent is slowly removed from the primary reactant by the reaction of the chemical constituent vapor with a secondary reactant, spatially separated from the primary reactant, in a closed volume under uniaxial pressure and heat to form the single phase pure crystals.

  13. Laboratory studies of crystal growth in magma

    Science.gov (United States)

    Hammer, J. E.; Welsch, B. T.; First, E.; Shea, T.

    2012-12-01

    The proportions, compositions, and interrelationships among crystalline phases and glasses in volcanic rocks cryptically record pre-eruptive intensive conditions, the timing of changes in crystallization environment, and the devolatilization history of eruptive ascent. These parameters are recognized as important monitoring tools at active volcanoes and interpreting geologic events at prehistoric and remote eruptions, thus motivating our attempts to understand the information preserved in crystals through an experimental appoach. We are performing laboratory experiments in mafic, felsic, and intermediate composition magmas to study the mechanisms of crystal growth in thermochemical environments relevant to volcanic environments. We target features common to natural crystals in igneous rocks for our experimental studies of rapid crystal growth phenomena: (1) Surface curvature. Do curved interfaces and spongy cores represent evidence of dissolution (i.e., are they corrosion features), or do they record the transition from dendritic to polyhedral morphology? (2) Trapped melt inclusions. Do trapped liquids represent bulk (i.e., far-field) liquids, boundary layer liquids, or something intermediate, depending on individual species diffusivity? What sequence of crystal growth rates leads to preservation of sealed melt inclusions? (3) Subgrain boundaries. Natural phenocrysts commonly exhibit tabular subgrain regions distinguished by small angle lattice misorientations or "dislocation lamellae" and undulatory extinction. Might these crystal defects be produced as dendrites undergo ripening? (4) Clusters. Contacting clusters of polymineralic crystals are the building blocks of cumulates, and are ubiquitous features of mafic volcanic rocks. Are plagioclase and clinopyroxene aligned crystallographically, suggesting an epitaxial (surface energy) relationship? (5) Log-normal size distribution. What synthetic cooling histories produce "natural" distributions of crystal sizes, and

  14. The growth of Nd: YAG single crystals

    Directory of Open Access Journals (Sweden)

    ANDREJA VALCIC

    2002-04-01

    Full Text Available Y3Al5O12 doped with 0.8 % wt. Nd (Nd:YAG single crystals were grown by the Czochralski technique under an argon atmosphere. The conditions for growing the Nd: YAG single crystals were calculated by using a combination of Reynolds and Grashof numbers. The critical crystal diameter and the critical rate of rotation were calculated from the hydrodynamics of the melt. The crystal diameter Dc = 1.5 cm remained constant during the crystal growth, while the critical rate of rotation changed from wc = 38 rpm after necking to wc = 13 rpm at the end of the crystal. The value of the rate of crystal growth was experimentally found to be 0.8–1.0 mm/h. According to our previous experiments, it was confirmed that 20 min exposure to conc. H3PO4 at 603 K was suitable for chemical polishing. Also, one-hour exposure to conc. H3PO4 at 493 K was found to be suitable for etching. The lattice parameter a = 1.201 (1 nm was determined by X-ray powder diffraction. The obtained results are discussed and compared with published data.

  15. Biomolecular Modification of Inorganic Crystal Growth

    Energy Technology Data Exchange (ETDEWEB)

    De Yoreo, J J

    2007-04-27

    The fascinating shapes and hierarchical designs of biomineralized structures are an inspiration to materials scientists because of the potential they suggest for biomolecular control over materials synthesis. Conversely, the failure to prevent or limit tissue mineralization in the vascular, skeletal, and urinary systems is a common source of disease. Understanding the mechanisms by which organisms direct or limit crystallization has long been a central challenge to the biomineralization community. One prevailing view is that mineral-associated macromolecules are responsible for either inhibiting crystallization or initiating and stabilizing non-equilibrium crystal polymorphs and morphologies through interactions between anionic moieties and cations in solution or at mineralizing surfaces. In particular, biomolecules that present carboxyl groups to the growing crystal have been implicated as primary modulators of growth. Here we review the results from a combination of in situ atomic force microscopy (AFM) and molecular modeling (MM) studies to investigate the effect of specific interactions between carboxylate-rich biomolecules and atomic steps on crystal surfaces during the growth of carbonates, oxalates and phosphates of calcium. Specifically, we how the growth kinetics and morphology depend on the concentration of additives that include citrate, simple amino acids, synthetic Asp-rich polypeptides, and naturally occurring Asp-rich proteins found in both functional and pathological mineral tissues. The results reveal a consistent picture of shape modification in which stereochemical matching of modifiers to specific atomic steps drives shape modification. Inhibition and other changes in growth kinetics are shown to be due to a range of mechanisms that depend on chemistry and molecular size. Some effects are well described by classic crystal growth theories, but others, such as step acceleration due to peptide charge and hydrophylicity, were previously unrealized

  16. Crystal growth from the melt by capillary shaping techniques

    Science.gov (United States)

    Ossipyan, Y. A.; Tatarchenko, V. A.

    A method based on the Lyapunov stability theory has been developed for studying the stability of crystallization by capillary shaping techniques (including Czochralski, Stepanov, EFG, Verneuil and floating zone methods). The preliminary results of the analysis of stability shows that the crystallization by capillary shaping technique under microgravitation conditions is more stable in some cases than under the action of gravitation. To get deeper into details of the capillary shaping technique under microgravitation conditions, we have carried out model experiments using two immiscible liquids of equal density and crystallization of sapphire in terrestrial conditions with small Bond number. The experiments on the copper crystallization were realized in the high-altitude rockets. Our experiments on indium crystallization carried out in the orbital space probe “Salyut” yielded cylindrical specimens.

  17. Studies of laser crystal growth. 1. Production of crystal growth furnaces and operating results

    Energy Technology Data Exchange (ETDEWEB)

    Sugiyama, Akira; Sasuga, Tsuneo; Arisawa, Takashi; Takuma, Hiroshi [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Anzai, Yutaka; Katsurayama, Masamichi; Yamazaki, Takafumi; Yamagishi, Kiyoshi

    1997-10-01

    Table top short pulse Peta-watt laser system is the most promising light source to drive studying high energy field physics in advance photon research. To achieve high efficiency laser oscillation in stable condition, it is required to pull out the best performance from laser crystals as the gain medium. Therefore, we have conducted cooperative investigation with Mitsui Mining and Smelting Co., LTD. to create large ideal laser crystals by improved growth methods which solve several problems in usual growth techniques. This report describes specifications, results of operation, and improvements in two different types of growth furnaces which make homogeneous doped concentration along growth direction of Nd:YAG laser crystal and large fluoride laser crystals with a wide band gap, respectively. It also describes the first four results of crystals such as YAG, Nd:YAG, YLF, and LBO grown by these furnaces. (author)

  18. An Apparatus for Growth of Small Crystals From Solutions.

    Science.gov (United States)

    Mitrovic, Mico M.

    1995-01-01

    Describes an apparatus for crystal growth that was designed to study growth kinetics of small crystals from solutions and to obtain crystals of various substances. Describes the use of the apparatus in laboratory practical experiments in the field of crystal growth physics within the course "Solid State Physics". (JRH)

  19. Growth of Al-doped ZnO films with tilted nano-columns on r-cut sapphire substrates by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Joon Hwan [Material Science and Engineering Program, Texas A and M University, College Station, Texas 77843-3128 (United States); Lu, Tianlin; Cho, Sungmee; Khatkatay, Fauzia [Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843-3128 (United States); Chen, Li [Material Science and Engineering Program, Texas A and M University, College Station, Texas 77843-3128 (United States); Wang, Haiyan, E-mail: wangh@ece.tamu.edu [Material Science and Engineering Program, Texas A and M University, College Station, Texas 77843-3128 (United States); Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843-3128 (United States)

    2012-12-01

    2 wt.% Al{sub 2}O{sub 3}-doped ZnO (AZO) thin films in both single layer and bi-layer forms were deposited on {alpha}-Al{sub 2}O{sub 3} (011{sup Macron }2) (r-cut) and (0001) (c-cut) substrates by a pulsed laser deposition technique. Single layer AZO films were grown under either vacuum or 33.3 Pa of O{sub 2} pressure. Bilayer AZO films were grown with a sequential deposition of a uniform template layer under vacuum and a nano-column-structured layer under 33.3 Pa of O{sub 2} pressure. Interestingly, single layer AZO film grown on r-cut sapphire in high oxygen pressure (33.3 Pa) shows tilted grain boundaries along [1{sup Macron }102{sup Macron }]{sub AZO}. The bilayer film deposited on r-cut substrate shows tilted nano-column growth while the film grown on c-cut substrate has vertically grown nano-columns. The results of X-ray diffraction and cross-section transmission electron microscopy studies show a systematic variation of the d-spacing of (0002){sub AZO} and (112{sup Macron }0){sub AZO} for all AZO films. Electrical resistivity was measured and found to be strongly dependent on the different microstructures achieved under different oxygen pressures and substrates. - Highlights: Black-Right-Pointing-Pointer 2 wt.% Al doped ZnO (AZO) thin film grown on r-cut sapphire under 33.3 Pa of O{sub 2} Black-Right-Pointing-Pointer Tiled boundary along [1{sup Macron }102{sup Macron }]{sub AZO} observed as a result of internal lattice strain Black-Right-Pointing-Pointer Tilted nano-column processed after sequential deposition under vacuum and 33.3 Pa of O{sub 2} Black-Right-Pointing-Pointer Significantly reduced electrical resistivity observed for the films on r-cut sapphire.

  20. Effect of heating conditions on flow patterns during the seeding stage of Kyropoulos sapphire crystal growth

    Science.gov (United States)

    Timofeev, Vladimir V.; Kalaev, Vladimir V.; Ivanov, Vadim G.

    2016-07-01

    We apply numerical simulation to understand the effect of heating conditions on melt convection in an industrial Ky furnace. The direct numerical simulation (DNS) approach was used to investigate the features of melt flow during the seeding stage. Two different cases of Kyropoulos furnace hot zone design were studied numerically, and results were compared with experimental data to understand the effect of modifications on melt convection.

  1. An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE

    Science.gov (United States)

    Törmä, P. T.; Ali, M.; Svensk, O.; Sintonen, S.; Kostamo, P.; Suihkonen, S.; Sopanen, M.; Lipsanen, H.; Odnoblyudov, M. A.; Bougrov, V. E.

    2009-12-01

    GaN films were fabricated by metal organic vapor phase epitaxy (MOVPE) on patterned sapphire substrates (PSSs) with either direct or inverse type patterned structures. Both of these two types of PSSs had their own unique GaN growth process which depart from the standard growth on the planar c-plane. GaN films on PSSs showed decreased threading dislocation (TD) density. However, differences between the crystal quality of the GaN films grown on PSSs were observed. It was also found out with one of the pattern type that the TD density varied laterally and followed the periodicity of the pattern on the sapphire surface.

  2. Flux growth of BPO 4 crystals

    Science.gov (United States)

    Li, Zhihua; Wu, Yicheng; Fu, Peizhen; Pan, Shilie; Chen, Chuangtian

    2004-10-01

    Single crystals of BPO4 with sizes up to 15×10×12 mm3 were grown by top-seeded solution growth method using Li2O-Li4P2O7 as fluxes. The components volatilized from the melt were characterized by the method of X-ray powder diffraction. The defects of grown crystals have also been investigated. The measured ultraviolet cutoff edge of BPO4 was about 130 nm. Its density was 2.82 g/cm3 determined using drainage method.

  3. Crystallization and Growth of Colloidal Nanocrystals

    CERN Document Server

    Leite, Edson Roberto

    2012-01-01

    Since the size, shape, and microstructure of nanocrystalline materials strongly impact physical and chemical properties, the development of new synthetic routes to  nanocrystals with controlled composition and morphology is a key objective of the nanomaterials community. This objective is dependent on control of the nucleation and growth mechanisms that occur during the synthetic process, which in turn requires a fundamental understanding of both classical nucleation and growth and non-classical growth processes in nanostructured materials.  Recently, a novel growth process called Oriented Attachment (OA) was identified which appears to be a fundamental mechanism during the development of nanoscale  materials. OA is a special case of aggregation that provides an important route by which nanocrystals grow, defects are formed, and unique—often symmetry-defying—crystal morphologies can be produced. This growth mechanism involves reversible self-assembly of primary nanocrystals followed by reorientati...

  4. Influence of growth temperature on laser molecular beam epitaxy and properties of GaN layers grown on c-plane sapphire

    Science.gov (United States)

    Dixit, Ripudaman; Tyagi, Prashant; Kushvaha, Sunil Singh; Chockalingam, Sreekumar; Yadav, Brajesh Singh; Sharma, Nita Dilawar; Kumar, M. Senthil

    2017-04-01

    We have investigated the influence of growth temperature on the in-plane strain, structural, optical and mechanical properties of heteroepitaxially grown GaN layers on sapphire (0001) substrate by laser molecular beam epitaxy (LMBE) technique in the temperature range 500-700 °C. The GaN epitaxial layers are found to have a large in-plane compressive stress of about 1 GPa for low growth temperatures but the strain drastically reduced in the layer grown at 700 °C. The nature of the in-plane strain has been analyzed using high resolution x-ray diffraction, atomic force microscopy (AFM), Raman spectroscopy and photoluminescence (PL) measurements. From AFM, a change in GaN growth mode from grain to island is observed at the high growth temperature above 600 °C. A blue shift of 20-30 meV in near band edge PL emission line has been noticed for the GaN layers containing the large in-plane strain. These observations indicate that the in-plane strain in the GaN layers is dominated by a biaxial strain. Using nanoindentation, it is found that the indentation hardness and Young's modulus of the GaN layers increases with increasing growth temperature. The results disclose the critical role of growth mode in determining the in-plane strain and mechanical properties of the GaN layers grown by LMBE technique.

  5. Bridgman growth of bismuth tellurite crystals

    Indian Academy of Sciences (India)

    Anhua Wu; Jiayue Xu; Guoxing Qian; Baoliang Lu; Zengwei Ge; Linyao Tang; Xianjun Wu

    2005-10-01

    The photorefractive crystal, Bi2TeO5, was grown by the modified Bridgman method for the first time. High purity Bi2O3 and TeO2 were used as starting materials and were mixed thoroughly with molar ratio of Bi2O3/TeO2 = 1 : 1. Platinum crucible was fabricated with a seed well of 10 mm in diameter and several folds were pressed so that the spontaneous nuclei could be eliminated through competition. The crucible was sealed during the growth so that the evaporation of TeO2 was controlled effectively. By optimizing growth parameters, transparent and crack-free Bi2TeO5 crystal up to 25 mm in diameter and 40 mm in length was grown successfully.

  6. Engineering crystal growth of calcium hydrogenphosphate dihydrate

    Energy Technology Data Exchange (ETDEWEB)

    Sikiric, M.; Babic-Ivancic, V. [Institut Rudjer Boskovic, Zagreb (Croatia); Milat, O. [Zagreb Univ. (Croatia). Inst. za Fiziku; Sarig, S.; Fueredi-Milhofer, H. [Hebrew Univ., Jerusalem (Israel). Inst. of Applied Chemistry

    2001-07-01

    The factors underlying calcium hydrogenphosphate dihydrate (CaHPO{sub 4}.2H{sub 2}O, DCPD) interactions with several structurally different additives: glutamic and aspartic acid, sodium citrate, hexaammonium tetrapolyphosphate, calcium phytate and polyaspartic acid were studied. DCPD crystals were prepared under controlled conditions by fast mixing of the anionic and cationic reactant solutions and subsequent growth without further stirring in the course of 24 hours at 37 C. The initial conditions were c(CaCl{sub 2}) = c(Na{sub 2}HPO{sub 4}) = 0.021 mol dm{sup -3}, c(NaCl) = 0.3 mol dm{sup -3}, pH{sub i} 5.5. The respective additive was added to the anionic component prior to pH adjustment. Crystals were characterized by X-ray diffraction, while their morphology was observed by optical and scanning electron microscopy (SEM). The Miller indices of the crystal faces were determined from SEM micrographs, after the orientation of the most prominent face was ascertained by the Weissenberg method. Mechanism of additive-DCPD crystals interaction depends on size and structure of additive molecule, structural fit between organic molecule and the ionic structure of particular crystal face. Small molecules (ions) specifically adsorb on lateral faces by electrostatic interactions, while macromolecules and molecules with hindered structure specifically adsorb on dominant (010) face, for which certain degree of structural fit is necessary. (orig.)

  7. Growth of piezoelectric crystals by Czochralski method

    OpenAIRE

    Cochet-Muchy, D.

    1994-01-01

    The Czochralski method is one of the most widely used industrial technique to grow single-crystals, since it applies to a very large range of compounds, such as semiconductors, oxides, fluorides, etc... Many exhibit piezoelectric properties and some of them find applications in Surface-Acoustic-Waves or Bulk-Acoustic-Waves devices. That explains the large amount of work made on the development of the corresponding growth processes and the high levels of production achieved in the world today....

  8. Sealed silica pressure ampoules for crystal growth

    Science.gov (United States)

    Holland, L. R.

    1984-01-01

    The properties of vitreous silica and the mechanics of thick walled pressure vessels are reviewed with regard to the construction of sealed silica crucibles such as are used in the growth of mercury-cadmium telluride crystals. Data from destructive rupture tests are reported, failure modes discussed, and recommendations for design given. Ordinary commercial clear vitreous silica from flame fused quartz can withstand a surface stress of 20 MPa or more in this application.

  9. Studying Crystal Growth With the Peltier Effect

    Science.gov (United States)

    Larsen, David J., Jr.; Dressler, B.; Silberstein, R. P.; Poit, W. J.

    1986-01-01

    Peltier interface demarcation (PID) shown useful as aid in studying heat and mass transfer during growth of crystals from molten material. In PID, two dissimilar "metals" solid and liquid phases of same material. Current pulse passed through unidirectionally solidifying sample to create rapid Peltier thermal disturbance at liquid/solid interface. Disturbance, measured by thermocouple stationed along path of solidification at or near interface, provides information about position and shape of interface.

  10. A Microstructural Comparison of the Initial Growth of AIN and GaN Layers on Basal Plane Sapphire and SiC Substrates by Low Pressure Metalorganic Chemical Vapor Depositon

    Science.gov (United States)

    George, T.; Pike, W. T.; Khan, M. A.; Kuznia, J. N.; Chang-Chien, P.

    1994-01-01

    The initial growth by low pressure metalorganic chemical vapor deposition and subsequent thermal annealing of AIN and GaN epitaxial layers on SiC and sapphire substrates is examined using high resolution transmission electron microscopy and atomic force microscopy.

  11. LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

    Energy Technology Data Exchange (ETDEWEB)

    Di Forte Poisson, M.A.; Sarazin, N.; Magis, M.; Tordjman, M.; Di Persio, J.; Oualli, M.; Chartier, E.; Morvan, E.; Delage, S. [Alcatel-Thales III-V Lab, Marcoussis (France); Langer, R. [Soitec/Picogiga, Courtaboeuf (France); Iliopoulos, E.; Georgakilas, A. [University of Crete, Physics Department, Microelectronics Research Group, Heraklion-Crete (Greece); FORTH, IESL, Heraklion-Crete (Greece); Kominou, P. [Aristote University, Thessaloniki (Greece); Guziewicz, M.; Kaminska, E.; Piotrowska, A. [Institute of Electron Technology, Warsaw (Poland); Gaquiere, C. [IEMN, Avenue Poincare, Villeneuve d' Ascq (France)

    2010-05-15

    In this paper we report on low-pressure metalorganic vapour deposition of InAlN/GaN heterostructures grown on different substrates (Sapphire, bulk SiC, composite SiCopSiC) for HEMT applications, and on first device performances obtained with these heterostructures. Optimisation of the crystal growth on each kind of substrate has led to InAlN/GaN HEMT heterostructures grown on bulk SiC and on composite SiCopSiC substrates which are successfully compared, in terms of material quality, to the standard GaAlN/GaN HEMT heterostructures grown on bulk SiC substrates. First devices based on InAlN/GaN heterostructures grown on bulk SiC exhibit very good microwave performances, with output power of 10.3 W/mm at 10 GHz, similar to those obtained with GaAlN/GaN heterostructures, confirming the promising potential of InAlN material. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Dispersive growth and laser-induced rippling of large-area singlelayer MoS2 nanosheets by CVD on c-plane sapphire substrate

    Science.gov (United States)

    Liu, Hongfei; Chi, Dongzhi

    2015-06-01

    Vapor-phase growth of large-area two-dimensional (2D) MoS2 nanosheets via reactions of sulfur with MoO3 precursors vaporized and transferred from powder sources onto a target substrate has been rapidly progressing. Recent studies revealed that the growth yield of high quality singlelayer (SL) MoS2 is essentially controlled by quite a few parameters including the temperature, the pressure, the amount/weight of loaded source precursors, and the cleanup of old precursors. Here, we report a dispersive growth method where a shadow mask is encapsulated on the substrate to ‘indirectly’ supply the source precursors onto the laterally advancing growth front at elevated temperatures. With this method, we have grown large-area (up to millimeters) SL-MoS2 nanosheets with a collective in-plane orientation on c-plane sapphire substrates. Regular ripples (~1 nm in height and ~50 nm in period) have been induced by laser scanning into the SL-MoS2 nanosheets. The MoS2 ripples easily initiate at the grain boundaries and extend along the atomic steps of the substrate. Such laser-induced ripple structures can be fundamental materials for studying their effects, which have been predicted to be significant but hitherto not evidenced, on the electronic, mechanical, and transport properties of SL-MoS2.

  13. Growth units model of anion coordination-polyhedra and its application to crystal growth

    Institute of Scientific and Technical Information of China (English)

    ZHANG Xuehua; LUO Haosu; ZHONG Weizhuo

    2004-01-01

    Growth units model of anion coordination-polyhedra ACP model emphasizes the influence of intrinsic structure of crstal upon the crystal growth and the importance of the external conditions on which crystals grow. The ACP model is used to analyze some problems in crystal growth, such as the formation of dendrite in the crystal structure,growth habit of polar crystal, and formation of allomerism and polymorphism.

  14. Growth of the (001 face of borax crystals

    Directory of Open Access Journals (Sweden)

    Suharso Suharso

    2010-06-01

    Full Text Available he growth rates of borax crystals from aqueous solutions in the (001 direction at various relative supersaturations were measured using in situ cell optical microscopy method. The result shows that the growth mechanism of the (001 face of borax crystal at temperature of 20 °C is spiral growth mechanism.   Keywords: Growth mechanism, borax.

  15. Growth of the (001) face of borax crystals

    OpenAIRE

    Suharso, Suharso

    2010-01-01

    he growth rates of borax crystals from aqueous solutions in the (001) direction at various relative supersaturations were measured using in situ cell optical microscopy method. The result shows that the growth mechanism of the (001) face of borax crystal at temperature of 20 °C is spiral growth mechanism.   Keywords: Growth mechanism, borax.

  16. Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structure

    Science.gov (United States)

    Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)

    2016-01-01

    One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

  17. The impact of space research on semiconductor crystal growth technology

    Science.gov (United States)

    Witt, A. F.

    1983-01-01

    Crystal growth experiments in reduced gravity environment and related ground-based research have contributed significantly to the establishment of a scientific basis for semiconductor growth from the melt. NASA-sponsored research has been instrumental in the introduction of heat pipes for heat and mass transfer control in crystal growth and in the development of magnetic field induced melt stabilization, approaches primarily responsible for recent advances in crystal growth technology.

  18. In-situ detection of growth striations by crystallization electromotive force measurement during Czochralski crystal growth

    Science.gov (United States)

    Zhu, Yunzhong; Ma, Decai; Long, Siwei; Tang, Feng; Lin, Shaopeng; Wang, Biao

    2017-10-01

    Growth striations, as macrodefects of crystalline materials, are mainly caused by convection and temperature fluctuations in growth interface. For decades, striations have been widely regarded as an inherent problem. Even in the well-developed Czochralski method, the striation formation process is difficult to inspect in situ. In view of this long-standing issue, after systematically studying the temperature, weight, and output power during crystal growth and numerically modeling the growth process, we found that the regularity of the growth interface electromotive force (GEMF) is related to the distribution of striations. Furthermore, the GEMF quantifies interface fluctuations (711.2 s, 16.6 μm) and thermal hysteresis (107 s), presenting finer details than those provided by a thermocouple and a load cell. In this paper, GEMF is found to be an outstanding choice for monitoring the crystal growth status in real time. As an additional feedback, a new automatic control method could be developed for reducing growth striations and promoting crystal quality.

  19. Physicochemical principles of high-temperature crystallization and single crystal growth methods

    Science.gov (United States)

    Bagdasarov, Kh. S.

    The mechanisms of crystal growth are reviewed, with attention given to the physicochemical reactions taking place in the melt near the phase boundary; phenomena determining physical and chemical kinetics directly at the growth front; solid-phase processes occurring within the crystal. Methods for growing refractory single crystals are discussed with particular reference to the Verneuil method, zone melting, Czhochralskii growth, horizontal directional solidification, and the Stockbarger method. Methods for growing crystals of complex geometrical shapes are also discussed.

  20. Study on the Anisotropy of Meniscus in the Growing Sapphire

    Institute of Scientific and Technical Information of China (English)

    YAO Tai; ZUO Hong-bo; HAN Jie-cai; MENG Song-he; ZHANG Ming-fu; LI Chang-qing; Grigoryan Benik

    2006-01-01

    This study is aimed at predicting the relationship between the meniscus and the quality of the sapphire crystals produced by the micro-pulling and shoulder at cooled center (SAPMIC) technique. As with different orientations, the shapes of the meniscus vary, so an investigation into the anisotropy of the meniscus shapes is very important for the final quality of the sapphire crystal. An effective model to describe meniscus shapes and their formation process has been presented. The model has been applied to a sapphire crystal of 200 mm diameter in order to check its reliability. The results show that the model proves to be useful for forecasting the final shapes of the sapphire crystal made by the SAPMIC technique.

  1. Advances in the understanding of crystal growth mechanisms

    CERN Document Server

    Nishinaga, T; Harada, J; Sasaki, A; Takei, H

    1997-01-01

    This book contains the results of a research project entitled Crystal Growth Mechanisms on an Atomic Scale, which was carried out for 3 years by some 72 reseachers. Until recently in Japan, only the technological aspects of crystal growth have been emphasized and attention was paid only to its importance in industry. However the scientific aspects also need to be considered so that the technology of crystal growth can be developed even further. This project therefore aimed at understanding crystal growth and the emphasis was on finding growth mechanisms on an atomic scale.

  2. Single crystal growth and anisotropic crystal-fluid interface tension in soft colloidal systems

    NARCIS (Netherlands)

    Nguyen, V.D.; Hu, Z.; Schall, P.

    2011-01-01

    We measure the anisotropy of the crystal-fluid interfacial free energy in soft colloidal systems. A temperature gradient is used to direct crystal nucleation and control the growth of large single crystals in order to achieve well-equilibrated crystal-fluid interfaces. Confocal microscopy is used to

  3. CRYSTAL GROWTH OF RARE EARTH COMPOUNDS IN CLOSED SYSTEM

    OpenAIRE

    1991-01-01

    Remarkable improvements have been made on the crystal growth of rare earth pnictides and chalchogenides by the development of new growth technique and the construction of several new equipments for the crystal growth such as electron beam welding system of tungsten crucible provided with large glove box and vacuum HF furnace. This system has really worked on obtaining excellent quality of single crystals and made easier to explore unknown materials of rare earth compounds. Interesting and att...

  4. Growth of Hydroxyapatite Crystal in the Presence of Origanic Film

    Institute of Scientific and Technical Information of China (English)

    Yong LIU; Suping HUANG; Xiaohong DAN; Kechao ZHOU

    2004-01-01

    The growth of hydroxyapatite (Hap) crystal in the presence of hexadecylamine was investigated. Due to its high polarity and high charge density, the organic film could increase the ion supersaturation on its surface. Therefore the growth of pure Hap crystals was accelerated. Moreover, the positive headgroups of the organic film could act as recognized nucleation sites and orient the growth of Hap crystals along thedirection.

  5. Anion-switchable supramolecular gels for controlling pharmaceutical crystal growth

    Science.gov (United States)

    Foster, Jonathan A.; Piepenbrock, Marc-Oliver M.; Lloyd, Gareth O.; Clarke, Nigel; Howard, Judith A. K.; Steed, Jonathan W.

    2010-12-01

    We describe the use of low-molecular-weight supramolecular gels as media for the growth of molecular crystals. Growth of a range of crystals of organic compounds, including pharmaceuticals, was achieved in bis(urea) gels. Low-molecular-weight supramolecular gelators allow access to an unlimited range of solvent systems, in contrast to conventional aqueous gels such as gelatin and agarose. A detailed study of carbamazepine crystal growth in four different bis(urea) gelators, including a metallogelator, is reported. The crystallization of a range of other drug substances, namely sparfloxacin, piroxicam, theophylline, caffeine, ibuprofen, acetaminophen (paracetamol), sulindac and indomethacin, was also achieved in supramolecular gel media without co-crystal formation. In many cases, crystals can be conveniently recovered from the gels by using supramolecular anion-triggered gel dissolution; however, crystals of substances that themselves bind to anions are dissolved by them. Overall, supramolecular gel-phase crystallization offers an extremely versatile new tool in pharmaceutical polymorph screening.

  6. Crystal growth in zinc borosilicate glasses

    Science.gov (United States)

    Kullberg, Ana T. G.; Lopes, Andreia A. S.; Veiga, João P. B.; Monteiro, Regina C. C.

    2017-01-01

    Glass samples with a molar composition (64+x)ZnO-(16-x)B2O3-20SiO2, where x=0 or 1, were successfully synthesized using a melt-quenching technique. Based on differential thermal analysis data, the produced glass samples were submitted to controlled heat-treatments at selected temperatures (610, 615 and 620 °C) during various times ranging from 8 to 30 h. The crystallization of willemite (Zn2SiO4) within the glass matrix was confirmed by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). Under specific heat-treatment conditions, transparent nanocomposite glass-ceramics were obtained, as confirmed by UV-vis spectroscopy. The influence of temperature, holding time and glass composition on crystal growth was investigated. The mean crystallite size was determined by image analysis on SEM micrographs. The results indicated an increase on the crystallite size and density with time and temperature. The change of crystallite size with time for the heat-treatments at 615 and 620 °C depended on the glass composition. Under fixed heat-treatment conditions, the crystallite density was comparatively higher for the glass composition with higher ZnO content.

  7. Growth and characterization of well-aligned densely-packed rutile TiO(2) nanocrystals on sapphire substrates via metal-organic chemical vapor deposition.

    Science.gov (United States)

    Chen, C A; Chen, Y M; Korotcov, A; Huang, Y S; Tsai, D S; Tiong, K K

    2008-02-20

    Well-aligned densely-packed rutile TiO(2) nanocrystals (NCs) have been grown on sapphire (SA) (100) and (012) substrates via metal-organic chemical vapor deposition (MOCVD), using titanium-tetraisopropoxide (TTIP, Ti(OC(3)H(7))(4)) as a source reagent. The surface morphology as well as structural and spectroscopic properties of the as-deposited NCs were characterized using field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), selected-area electron diffractometry (SAED), x-ray diffraction (XRD) and micro-Raman spectroscopy. FESEM micrographs reveal that vertically aligned NCs were grown on SA(100), whereas the NCs on the SA(012) were grown with a tilt angle of ∼33° from the normal to substrates. TEM and SAED measurements showed that the TiO(2) NCs on SA(100) with square cross section have their long axis directed along the [001] direction. The XRD results reveal TiO(2) NCs with either (002) orientation on SA(100) substrate or (101) orientation on SA(012) substrate. A strong substrate effect on the alignment of the growth of TiO(2) NCs has been demonstrated and the probable mechanism for the formation of these NCs has been discussed.

  8. Structure of shaped sapphire grown from multicapillary dies

    Science.gov (United States)

    Dobrovinskaya, E. R.; Litvinov, L. A.; Pischik, V. V.

    1990-07-01

    Peculiarities in grain structure development have been studied in sapphire crystals grown with multicapillary channels in the die to feed melt to the crystallization zone. A new mechanism of grain boundary formation based on gas-bubble collapse at the crystal-melt interface is proposed.

  9. Bonding Energy and Growth Habit of Lithium Niobate Single Crystals

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    On the basis of crystallographic structure of lithium niobate (LN), the bonding energy was quantitatively calculated by the bond valence sum model, which was employed to investigate the crystal growth. A possible relationship between the crystal growth habit and chemical bonding energy of LN crystals are found. It is found that the higher the bond energy, the slower the growth rate, and the more important the plane. The analytical results indicate that (012) plane is the most influential face for the LN crystal growth, which consists well with the standard card (JCPDS Card: 20-0631) and our previous experimental observation. The current work shows that the chemical bond analysis of LN crystals allows us to predict its growth habit and thus to obtain the expected morphology during the spontaneous growth.

  10. Crystal growth in fluid flow: Nonlinear response effects

    Science.gov (United States)

    Peng, H. L.; Herlach, D. M.; Voigtmann, Th.

    2017-08-01

    We investigate crystal-growth kinetics in the presence of strong shear flow in the liquid, using molecular-dynamics simulations of a binary-alloy model. Close to the equilibrium melting point, shear flow always suppresses the growth of the crystal-liquid interface. For lower temperatures, we find that the growth velocity of the crystal depends nonmonotonically on the shear rate. Slow enough flow enhances the crystal growth, due to an increased particle mobility in the liquid. Stronger flow causes a growth regime that is nearly temperature-independent, in striking contrast to what one expects from the thermodynamic and equilibrium kinetic properties of the system, which both depend strongly on temperature. We rationalize these effects of flow on crystal growth as resulting from the nonlinear response of the fluid to strong shearing forces.

  11. Nucleation and crystal growth in laser patterned lines in glasses

    Directory of Open Access Journals (Sweden)

    Takayuki Komatsu

    2016-07-01

    Full Text Available Laser-induced crystallization is a new method for the design and control of the crystallization of glasses and opens a new door in the study of nucleation and crystal growth in glasses. Nonlinear optical Sm-doped -BaB2O4 (-BBO crystal lines were patterned by continuous wave Yb:YVO4 fiber laser (wavelength 1080 nm in 8Sm2O3-42BaO-50B2O3 glass as an example, and nucleation and crystal growth behaviors in the laser-patterned bending and crossing lines were examined. It was confirmed that the growth of c-axis oriented -BBO crystals follows along the laser scanning direction even if laser scanning direction changes. The model of self-organized homo-epitaxial crystal growth was demonstrated for the orientation of -BBO crystals at the crossing point of two lines, in which the first crystal line at the crossing point acts as nucleation site for the second crystal line. This study proposes a new crystal growth technology.

  12. Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two-stage growth process

    Science.gov (United States)

    Polyakov, A. Y.; Jang, Lee-Woon; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Yugova, T. G.; Reznik, V. Y.; Pearton, S. J.; Baik, Kwang Hyeon; Hwang, Sung-Min; Jung, Sukkoo; Lee, In-Hwan

    2011-11-01

    The electrical properties, presence of deep electron and hole traps and photoluminescence spectra were measured for undoped a-GaN films grown by metal-organic chemical vapor deposition (MOCVD) in a two-stage process using a high V/III ratio at the first stage and low V/III ratio at the second stage. Growth was performed on r-sapphire substrates with a high temperature GaN nucleation layer. The films showed a full width at half maximum of 450-470 arcseconds for the (11-20) x-ray rocking curve with little anisotropy with respect to the sample rotation around the growth direction. The stacking fault (SF) density determined by selective etching was ˜5 × 104 cm-1. The residual donor concentration was 1014-1015 cm-3, with a very low density (2.5 × 1013 cm-3) of electron traps located at Ec - 0.6 eV, which are believed to be one of the major non-radiative recombination centers in nonpolar GaN. Consequently, the films showed a high intensity of bandedge luminescence with negligible contribution from defect bands associated with SFs. In contrast to previously studied nonpolar GaN films, the a-GaN layers showed a high concentration of gallium-vacancy-related acceptors near Ev + 1 eV and a strong yellow luminescence band, both indicating that growth conditions were effectively N-rich. a-AlGaN/GaN heterojunctions with thin heavily Si doped AlGaN barriers made on a-GaN substrates showed two-dimensional electron gas (2DEG) concentrations of 1.2 × 1013 cm-3, with 2DEG mobility of 80 cm2/Vs. Capacitance-voltage profiling of Schottky diodes on these HJs suggest that the 2DEG is fully depleted by the built-in voltage of the Schottky diode.

  13. Reinvestigation of growth of 'L-valine zinc sulphate' crystal.

    Science.gov (United States)

    Srinivasan, Bikshandarkoil R; Jyai, Rita N

    2014-01-01

    A reinvestigation of the growth of l-valine zinc sulphate crystal is reported. The slow evaporation of an aqueous solution containing l-valine and zinc sulphate heptahydrate results in the fractional crystallization of l-valine and not the organic inorganic hybrid nonlinear optical l-valine zinc sulphate crystal, as reported by Puhal Raj and Ramachandra Raja (2012).

  14. Stability of melt crystal growth under microgravity conditions

    Science.gov (United States)

    Tatarchenko, V. A.

    The conception of dynamic stability of melt crystal growth has been developed. The method based on the Lyapunov stability theory has been used to the study stability of crystallization by capillary shaping techniques including Czokhralsky, Stepanov, Kiropoulos, Verneuil and floating zone methods. Preliminary results of the stability analysis of crystallization by floating zone technique under microgravity conditions are presented here.

  15. Simulation of Single Crystal Growth: Heat and Mass Transfer

    CERN Document Server

    Zhmakin, A I

    2015-01-01

    The heat transfer (conductive, convective, radiative) and the related problems (the unknown phase boundary fluid/crystal, the assessment of the quality of the grown crystals) encountered in the melt and vapour growth of single crystal as well as the corresponding macroscopic models are reviewed. The importance of the adequate description of the optical crystal properties (semitransparency, absorption, scattering, refraction, diffuse and specular reflecting surfaces) and their effect on the heat transfer is stressed. The problems of the code verification and validation are discussed; differences between the crystal growth simulation codes intended for the research and for the industrial applications are indicated.

  16. On the growth of calcium tartrate tetrahydrate single crystals

    Indian Academy of Sciences (India)

    X Sahaya Shajan; C Mahadevan

    2004-08-01

    Calcium tartrate single crystals were grown using silica gel as the growth medium. Calcium formate mixed with formic acid was taken as the supernatant solution. It was observed that the nucleation density was reduced and the size of the crystals was improved to a large extent compared to the conventional way of growing calcium tartrate crystals with calcium chloride. The role played by formate–formic acid on the growth of crystals is discussed. The grown crystals were characterized by atomic absorption spectroscopy (AAS), X-ray diffraction analysis (XRD), microhardness measurement, Fourier transform infrared spectroscopy (FTIR), thermogravimetry (TG) and differential thermal analysis (DTA). The results obtained are compared with the previous work.

  17. Nucleation and crystal growth in laser patterned lines in glasses

    OpenAIRE

    Takayuki Komatsu; Tsuyoshi Honma

    2016-01-01

    Laser-induced crystallization is a new method for the design and control of the crystallization of glasses and opens a new door in the study of nucleation and crystal growth in glasses. Nonlinear optical Sm-doped -BaB2O4 (-BBO) crystal lines were patterned by continuous wave Yb:YVO4 fiber laser (wavelength 1080 nm) in 8Sm2O3-42BaO-50B2O3 glass as an example, and nucleation and crystal growth behaviors in the laser-patterned bending and crossing lines were examined. It was confirmed that the...

  18. On the elastic contribution to crystal growth in complex environments

    Science.gov (United States)

    Gadomski, A.; Siódmiak, J.

    2005-03-01

    Based on a number of experimental studies, we propose to consider how elastic interactions between a crystal and its surroundings change crystal growing conditions. To aim to do this, we analyze the influence of some nonequilibrium modification of the Gibbs-Thomson thermodynamic condition, prescribed at the crystal boundary, on some properties of a kinetic model of protein crystal growth in a mass-convection regime. Next, to draw the physical picture more realistically, we study the influence of a certain stochastic perturbation on the crystal growth rate. To fulfill the task we apply the description of crystal growth in terms of nonequilibrium thermodynamics at a mesoscopic level. The proposed model offers a quite comprehensive picture of the formation of modern organic crystalline materials such as non-Kossel crystals.

  19. Space manufacturing in an automated crystal growth facility

    Science.gov (United States)

    Quinn, Alberta W.; Herrmann, Melody C.; Nelson, Pamela J.

    1989-01-01

    An account is given of a Space Station Freedom-based robotic laboratory system for crystal growth experiments; the robot must interface with both the experimental apparatus and such human input as may be required for control and display. The goal of the system is the simultaneous growth of several hundred protein crystals in microgravity. The robot possesses six degrees-of-freedom, allowing it to efficiently manipulate the cultured crystals as well as their respective growth cells; the crystals produced are expected to be of sufficiently high quality for complete structural determination on the basis of XRD.

  20. Preparation for microgravity science investigation of compound semiconductor crystal growth

    Science.gov (United States)

    Fripp, A. L.; Debnam, W. J.; Clark, I. O.; Crouch, R. K.; Carlson, F. M.

    1985-01-01

    Preparatory work on Bridgman directional solidification (BDS) of PbSnTe crystals prior to microgravity crystal growth experiments on Shuttle flights are reported. Gravitational effects become important in crystal growth when density gradients are present. The situation is critical in BDS of PbSnTe because of the necessity of obtaining homogeneous compositional distributions, which can be disturbed when convective processes occur. Numerical models have been defined which quantify the effects of convection in the crystal growth solution. The models were verified by earth-based crystal-growth tests in a two-zone furnace using equal concentrations of each of the elements. Data are provided to demonstrate the differences in composition among crystals grown at different orientations to the gravitational field vector.

  1. Issues in the growth of bulk crystals of infrared materials

    Science.gov (United States)

    Bachmann, K. J.; Golowsky, H.

    1987-01-01

    Attention is given to the relevant criteria governing materials choice in the growth of IR optoelectronic bulk single crystals of III-V and II-VI alloy and I-III-VI2 compound types. The most important considerations concern the control of crystal purity, microstructural perfection, stoichiometry, and uniformity during crystal growth, as well as the control of surface properties in wafer fabrication. Specific examples are given to illustrate the problems encountered and their preferred solutions.

  2. Computing the crystal growth rate by the interface pinning method

    DEFF Research Database (Denmark)

    Pedersen, Ulf Rørbæk; Hummel, Felix; Dellago, Christoph

    2015-01-01

    -phase configurations are stabilized by adding a spring-like bias field coupling to an order-parameter that discriminates between the two phases. Crystal growth is a Smoluchowski process and the crystal growth rate can, therefore, be computed from the terminal exponential relaxation of the order parameter. The approach...... from first principles. A generalized version of the method may be used for computing the rates of crystal nucleation or other rare events....

  3. Hard sphere crystal nucleation and growth near large spherical impurities

    Science.gov (United States)

    de Villeneuve, V. W. A.; Verboekend, D.; Dullens, R. P. A.; Aarts, D. G. A. L.; Kegel, W. K.; Lekkerkerker, H. N. W.

    2005-11-01

    We report how large spherical impurities affect the nucleation and growth of hard sphere colloidal crystals. Both the impurities and the colloids are fluorescently labelled polymethylmetacrylate particles and are dispersed in an optically and density matching solvent mixture. Crystal growth, initiated either at the impurity surface, or at the sample bottom, was studied by imaging sequences of two-dimensional xy-slices in the plane of the impurity's centre of mass with a laser scanning confocal microscope. At least two factors determine whether a large impurity can function as a seed for heterogeneous nucleation: timescales and impurity curvature. The curvature needs to be sufficiently low for crystal nuclei to form on the impurity surface. If bulk crystal growth has already approached the impurity, bulk growth is dominant over growth of crystallites on the impurity surface. Such surface crystallites eventually reorient to adapt to the overall bulk crystal symmetry.

  4. Needs and Opportunities in Crystal Growth.

    Science.gov (United States)

    Mroczkowski, Stanley

    1980-01-01

    Presents a survey of the scientific basis for single crystals production, discussing some of the theoretical and experimental advances in the area. Future prospects for semiconductors, magnetic lasers, nonlinear optics, piezoelectrics, and other crystals are surveyed. (Author/CS)

  5. Inhibition mechanism of aspartic acid on crystal growth of hydroxyapatite

    Institute of Scientific and Technical Information of China (English)

    HUANG Su-ping; ZHOU Ke-chao; LI Zhi-you

    2007-01-01

    The effects of aspartic acid on the crystal growth, morphology of hydroxyapatite(HAP) crystal were investigated, and the inhibition mechanism of aspartic acid on the crystal growth of hydroxyapatite was studied. The results show that the crystal growth rate of HAP decreases with the increase of the aspartic acid concentration, and the HAP crystal is thinner significantly compared with that without amino acid, which is mainly due to the (10(-)10) surface of HAP crystal being inhibited by the aspartic acids. The calculation analysis indicates that the crystal growth mechanism of HAP, following surface diffusion controlled mechanism, is not changed due to the presence of aspartic acid. AFM result shows that the front of terrace on vicinal growth hillocks is pinned, which suggests that the aspartic acid is adsorbed onto the (10(-)10) surface of HAP and interacts with the Ca2+ ions of HAP surface, so as to block the growth active sites and result in retarding of the growth of HAP crystal.

  6. Single Crystal Growth of Zirconia Utilizing a Skull Melting Technique,

    Science.gov (United States)

    1979-08-01

    help eliminate many crystal growth problems. The flame-fusion apparatus was invented by A. Verneuil 3 over 75 years ago and has been used for growth of...AOAO2 23 OMEAIRDEVLOPENT CNT RI RIFISS AFB NY F /S .7/ NGLE CRYSTAL GROWTH OF Z RONA UT IXZIN A SKULL MELTING TE-SCUl AUG 79 A C MARSHALL, J A ADAMSK...Crucible-less synthesis 50. ABSTRACT (Ceefiw.. - eooe edi. ,.e.eimwd identiby Slek ~b.,) Investigation into the growth of single crystal materials are

  7. High-Precision Temperature Control of a Crystal Growth Furnace at 1,500 C

    Science.gov (United States)

    Stenzel, Ch.; Hess, A.; Croell, A.; Breuer, D.; Sauermann, H.

    2012-01-01

    For crystal growth of semiconductor materials a short-term temperature stability of 0.1 C at 1500 C is one of the essential parameters to be addressed for achieving high-quality crystals. Hence, for temperature monitoring and control with high precision in a floating zone furnace two sets of thermo-sensors, type B thermocouples and optical fibre thermometers, have been implemented and successfully operated in the furnace for more than 2000 h. The optical fibre thermometers consist of an optical system made of sapphire (two fibres plus a prism in between for deflection) and transmit the infra-red radiation of the heater to the outside of the hot core of the furnace for pyrometric temperature measurement. A dedicated control algorithm has been set up which controlled the power settings to the individual heaters. Both sensor types showed no degradation after this period and yielded a short-term stability at 1200 C of 0.05 C (optical fibre thermometers), respectively 0.08 C (thermocouples).

  8. Characterization of the Bridgman crystal growth process by radiographic imaging

    Science.gov (United States)

    Fripp, Archibald L.; Debnam, W. J.; Woodell, G. W.; Berry, R. F.; Simchick, R. T.; Sorokach, S. K.; Barber, P. G.

    1991-01-01

    Elemental (Ge) and alloy (PbSnTe) crystal growth that is monitored via radiography to reveal both the interface position and the shape in real time is discussed for both seeded and unseeded growth. It is concluded that the interface position and the actual growth rate of a Bridgman grown crystal is dependent on the growth conditions. The actual growth rate which is a strong function of the degree of supercooling exceeded the pull rate by a factor of greater than two. The interface shape changed from concave to flat to convex during the growth.

  9. Characterization of the Bridgman crystal growth process by radiographic imaging

    Science.gov (United States)

    Fripp, Archibald L.; Debnam, W. J.; Woodell, G. W.; Berry, R. F.; Simchick, R. T.; Sorokach, S. K.; Barber, P. G.

    1991-01-01

    Elemental (Ge) and alloy (PbSnTe) crystal growth that is monitored via radiography to reveal both the interface position and the shape in real time is discussed for both seeded and unseeded growth. It is concluded that the interface position and the actual growth rate of a Bridgman grown crystal is dependent on the growth conditions. The actual growth rate which is a strong function of the degree of supercooling exceeded the pull rate by a factor of greater than two. The interface shape changed from concave to flat to convex during the growth.

  10. Polishing Sapphire Substrates by 355 nm Ultraviolet Laser

    Directory of Open Access Journals (Sweden)

    X. Wei

    2012-01-01

    Full Text Available This paper tries to investigate a novel polishing technology with high efficiency and nice surface quality for sapphire crystal that has high hardness, wear resistance, and chemical stability. A Q-switched 355 nm ultraviolet laser with nanosecond pulses was set up and used to polish sapphire substrate in different conditions in this paper. Surface roughness Ra of polished sapphire was measured with surface profiler, and the surface topography was observed with scanning electronic microscope. The effects of processing parameters as laser energy, pulse repetition rate, scanning speed, incident angle, scanning patterns, and initial surface conditions on surface roughness were analyzed.

  11. Study on buoyancy convection phenomenon in the crystal growth process

    Institute of Scientific and Technical Information of China (English)

    DUAN Li; KANG Qi

    2009-01-01

    Real-time phase shift Mach-Zehnder interference technique,imaging technique,and computer image processing technique were combined to perform a real-time diagnosis of NaCIO3 crystal,which described both the dissolution process end the crystallization process of the NaCIO3 crystal in real-time condition.The dissolution fringes and the growth fringes in the process were obtained.Moreover,a distribution of concentration field in this process was obtained by inversion calculation.Finally,the buoyancy convection phenomenon caused by gravity in the crystal growth process was analyzed.The results showed that this convection phenomenon directly influences the growth rate of each crystal face in the crystal.

  12. Study on buoyancy convection phenomenon in the crystal growth process

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Real-time phase shift Mach-Zehnder interference technique, imaging technique, and computer image processing technique were combined to perform a real-time diagnosis of NaClO3 crystal, which de- scribed both the dissolution process and the crystallization process of the NaClO3 crystal in real-time condition. The dissolution fringes and the growth fringes in the process were obtained. Moreover, a distribution of concentration field in this process was obtained by inversion calculation. Finally, the buoyancy convection phenomenon caused by gravity in the crystal growth process was analyzed. The results showed that this convection phenomenon directly influences the growth rate of each crystal face in the crystal.

  13. Calcite crystal growth rate inhibition by polycarboxylic acids

    Science.gov (United States)

    Reddy, M.M.; Hoch, A.R.

    2001-01-01

    Calcite crystal growth rates measured in the presence of several polycarboxyclic acids show that tetrahydrofurantetracarboxylic acid (THFTCA) and cyclopentanetetracarboxylic acid (CPTCA) are effective growth rate inhibitors at low solution concentrations (0.01 to 1 mg/L). In contrast, linear polycarbocylic acids (citric acid and tricarballylic acid) had no inhibiting effect on calcite growth rates at concentrations up to 10 mg/L. Calcite crystal growth rate inhibition by cyclic polycarboxyclic acids appears to involve blockage of crystal growth sites on the mineral surface by several carboxylate groups. Growth morphology varied for growth in the absence and in the presence of both THFTCA and CPTCA. More effective growth rate reduction by CPTCA relative to THFTCA suggests that inhibitor carboxylate stereochemical orientation controls calcite surface interaction with carboxylate inhibitors. ?? 20O1 Academic Press.

  14. Growth and Characterization on PMN-PT-Based Single Crystals

    Directory of Open Access Journals (Sweden)

    Jian Tian

    2014-07-01

    Full Text Available Lead magnesium niobate—lead titanate (PMN-PT single crystals have been successfully commercialized in medical ultrasound imaging. The superior properties of PMN-PT crystals over the legacy piezoelectric ceramics lead zirconate titanate (PZT enabled ultrasound transducers with enhanced imaging (broad bandwidth and improved sensitivity. To obtain high quality and relatively low cost single crystals for commercial production, PMN-PT single crystals were grown with modified Bridgman method, by which crystals were grown directly from stoichiometric melt without flux. For ultrasound imaging application, [001] crystal growth is essential to provide uniform composition and property within a crystal plate, which is critical for transducer performance. In addition, improvement in crystal growth technique is under development with the goals of improving the composition homogeneity along crystal growth direction and reducing unit cost of crystals. In recent years, PIN-PMN-PT single crystals have been developed with higher de-poling temperature and coercive field to provide improved thermal and electrical stability for transducer application.

  15. An assessment of calcite crystal growth mechanisms based on crystal size distributions

    Science.gov (United States)

    Kile, D.E.; Eberl, D.D.; Hoch, A.R.; Reddy, M.M.

    2000-01-01

    Calcite crystal growth experiments were undertaken to test a recently proposed model that relates crystal growth mechanisms to the shapes of crystal size distributions (CSDs). According to this approach, CSDs for minerals have three basic shapes: (1) asymptotic, which is related to a crystal growth mechanism having constant-rate nucleation accompanied by surface-controlled growth; (2) lognormal, which results from decaying-rate nucleation accompanied by surface-controlled growth; and (3) a theoretical, universal, steady-state curve attributed to Ostwald ripening. In addition, there is a fourth crystal growth mechanism that does not have a specific CSD shape, but which preserves the relative shapes of previously formed CSDs. This mechanism is attributed to supply-controlled growth. All three shapes were produced experimentally in the calcite growth experiments by modifying nucleation conditions and solution concentrations. The asymptotic CSD formed when additional reactants were added stepwise to the surface of solutions that were supersaturated with respect to calcite (initial Ω = 20, where Ω = 1 represents saturation), thereby leading to the continuous nucleation and growth of calcite crystals. Lognormal CSDs resulted when reactants were added continuously below the solution surface, via a submerged tube, to similarly supersaturated solutions (initial Ω = 22 to 41), thereby leading to a single nucleation event followed by surface-controlled growth. The Ostwald CSD resulted when concentrated reactants were rapidly mixed, leading initially to high levels of supersaturation (Ω >100), and to the formation and subsequent dissolution of very small nuclei, thereby yielding CSDs having small crystal size variances. The three CSD shapes likely were produced early in the crystallization process, in the nanometer crystal size range, and preserved during subsequent growth. Preservation of the relative shapes of the CSDs indicates that a supply-controlled growth mechanism

  16. Crystal growth mechanisms of the (0 1 0) face of α-lactose monohydrate crystals

    Science.gov (United States)

    Dincer, T. D.; Ogden, M. I.; Parkinson, G. M.

    2009-04-01

    The growth rates of the (0 1 0) face of α-lactose monohydrate crystals were measured at 30, 40 and 50 °C in the relative supersaturation range 0.55-2.33 in aqueous solutions. The mechanisms of growth were investigated. Spiral growth was found to be the mechanism of growth up to a critical relative supersaturation ( s-1) crit=1.9 at 30 °C. Above the critical relative supersaturation, the crystal growth mechanisms were predicted to change. All growth models fit equally well to the growth rates. No two-dimensional nucleation was observed above critical supersaturation by AFM. On the other hand increased step height and roughness on the edges of steps were observed. It was concluded that the growth mechanism of the (0 1 0) face of α-lactose monohydrate crystal is spiral growth. A parabolic relationship was obtained below critical supersaturation followed by a linear relationship with relative supersaturation.

  17. Chemical Bond Calculations of Crystal Growth of KDP and ADP

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    A novel method was proposed to calculate the crystal morphology (or growth habit) on the basis of chemical bond analysis. All constituent chemical bonds were distinguished as relevant and independent bonds according to their variations during the crystallization process. By employing the current method, the influence of specific growth conditions on the crystal morphology can be considered in the structure analysis process. The ideal morphologies of both KDP (KH2PO4) and ADP (NH4H2PO4) crystals were calculated and compared with our obtained crystallites at room temperature, which validates the present calculation method very well.

  18. Universality classes for unstable crystal growth.

    Science.gov (United States)

    Biagi, Sofia; Misbah, Chaouqi; Politi, Paolo

    2014-06-01

    Universality has been a key concept for the classification of equilibrium critical phenomena, allowing associations among different physical processes and models. When dealing with nonequilibrium problems, however, the distinction in universality classes is not as clear and few are the examples, such as phase separation and kinetic roughening, for which universality has allowed to classify results in a general spirit. Here we focus on an out-of-equilibrium case, unstable crystal growth, lying in between phase ordering and pattern formation. We consider a well-established 2+1-dimensional family of continuum nonlinear equations for the local height h(x,t) of a crystal surface having the general form ∂_{t}h(x,t)=-∇·[j(∇h)+∇(∇^{2}h)]: j(∇h) is an arbitrary function, which is linear for small ∇h, and whose structure expresses instabilities which lead to the formation of pyramidlike structures of planar size L and height H. Our task is the choice and calculation of the quantities that can operate as critical exponents, together with the discussion of what is relevant or not to the definition of our universality class. These aims are achieved by means of a perturbative, multiscale analysis of our model, leading to phase diffusion equations whose diffusion coefficients encapsulate all relevant information on dynamics. We identify two critical exponents: (i) the coarsening exponent, n, controlling the increase in time of the typical size of the pattern, L∼t^{n}; (ii) the exponent β, controlling the increase in time of the typical slope of the pattern, M∼t^{β}, where M≈H/L. Our study reveals that there are only two different universality classes, according to the presence (n=1/3, β=0) or the absence (n=1/4, β>0) of faceting. The symmetry of the pattern, as well as the symmetry of the surface mass current j(∇h) and its precise functional form, is irrelevant. Our analysis seems to support the idea that also space dimensionality is irrelevant.

  19. Growth and defects of explosives crystals

    Science.gov (United States)

    Cady, H. H.

    Large single crystals of PETN, RDX, and TNT can be grown easily from evaporating ethyl acetate solutions. The crystals all share a similar type of defect that may not be commonly recognized. The defect generates conical faces, ideally mosaic crystals, and may account for the 'polymorphs' of TNT and detonator grades of PETN. TATB crystals manufactured by the amination of trichlorotrinitrobenzene in dry toluene entrain two forms of ammonium chloride. One of these forms causes 'worm holes' in the TATB crystals that may be the reason for its unusually low failure diameters. Strained HMX crystals form mechanical twins that can spontaneously revert back to the untwinned form when the straining force is removed. Large strains or temperatures above 100 C lock in the mechanical twins.

  20. Phase Relationship in Phenol-Insulin Crystal Growth System

    Institute of Scientific and Technical Information of China (English)

    梁栋材; 宋浪舟; 万柱礼; 常文瑞

    1994-01-01

    Based on the crystal growth system of rhombohedral 2Zn-insulin,the phase transition ofinsulin crystals has been investigated with the phenol concentration as an independent component.The dia-gram of the phase relationship in this crystal growth system was established,and two points of phase transi-tion were found.The transition point Ⅰ indicates the phase transition between rhombohedral 2Zn-insulin crys-tal and rhombohedral 4Zn-insulin crystal,and these two phases coexist within a narrow region of phenol con-centration (0.028%-0.029% (g/ml)).Point Ⅱ at 0.76%-0.77% (g/ml) of phenol concentration showsthe phase transition between rhombohcdral crystal and monoclinic crystals,and a new phase of monocliniccrystal (B-form monoclinic insulin crystal) has been observed.This paper reports the diagram of phase rela-tionship obtained from our experiments,and analyses and discusses the dependence of phase transition of in-sulin crystals on phenol concentration in crystal growth system.

  1. Epitaxial growth of In{sub x}Ga{sub 1-x}N alloy films on sapphire and silicon by reactive co-sputtering of GaAs and indium

    Energy Technology Data Exchange (ETDEWEB)

    Mohan, Shyam, E-mail: shyammohan@iitb.ac.in; Major, S. S. [Department of Physics, Indian Institute of Technology Bombay, Mumbai – 400076 (India); Srinivasa, R. S. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai – 400076 (India)

    2015-06-24

    In{sub x}Ga{sub 1-x}N alloy films (0.2sapphire and Si (100) substrates by reactive co-sputtering of GaAs and indium with 100% nitrogen at a substrate temperature of 600 °C. X-ray diffraction studies show the formation of completely c-axis oriented, single phase alloy films over the studied range of composition. The crystallite size along the growth direction and surface morphology of alloy films, particularly those with higher indium fraction exhibit substantial improvement on Si (100) substrate, compared to the c-cut sapphire substrate. The electrical resistivity decreases monotonously with increase in indium fraction and the alloy films on Si (100) show substantially higher mobility, compared to those on sapphire. These features are attributed to superior crystallinity of alloy films on Si (100), which possibly arise from the formation of interfacial hexagonal α-Si{sub 3}N{sub 4}, owing to the interaction of nitrogen plasma with Si surface.

  2. Progress in modeling of fluid flows in crystal growth processes

    Institute of Scientific and Technical Information of China (English)

    Qisheng Chen; Yanni Jiang; Junyi Yan; Ming Qin

    2008-01-01

    Modeling of fluid flows in crystal growth processes has become an important research area in theoretical and applied mechanics.Most crystal growth processes involve fluid flows,such as flows in the melt,solution or vapor.Theoretical modeling has played an important role in developing technologies used for growing semiconductor crystals for high performance electronic and optoelectronic devices.The application of devices requires large diameter crystals with a high degree of crystallographic perfection,low defect density and uniform dopant distribution.In this article,the flow models developed in modeling of the crystal growth processes such as Czochralski,ammono-thermal and physical vapor transport methods are reviewed.In the Czochralski growth modeling,the flow models for thermocapillary flow,turbulent flow and MHD flow have been developed.In the ammonothermal growth modeling,the buoyancy and porous media flow models have been developed based on a single-domain and continuum approach for the composite fluid-porous layer systems.In the physical vapor transport growth modeling,the Stefan flow model has been proposed based on the flow-kinetics theory for the vapor growth.In addition,perspectives for future studies on crystal growth modeling are proposed.

  3. Method of Promoting Single Crystal Growth During Melt Growth of Semiconductors

    Science.gov (United States)

    Su, Ching-Hua (Inventor)

    2013-01-01

    The method of the invention promotes single crystal growth during fabrication of melt growth semiconductors. A growth ampoule and its tip have a semiconductor source material placed therein. The growth ampoule is placed in a first thermal environment that raises the temperature of the semiconductor source material to its liquidus temperature. The growth ampoule is then transitioned to a second thermal environment that causes the semiconductor source material in the growth ampoule's tip to attain a temperature that is below the semiconductor source material's solidus temperature. The growth ampoule so-transitioned is then mechanically perturbed to induce single crystal growth at the growth ampoule's tip.

  4. Growth of Solid Solution Single Crystals

    Science.gov (United States)

    Lehoczky, Sandor L.; Szofran, F. R.; Gillies, Donald C.

    2001-01-01

    The solidification of a solid solution semiconductor, having a wide separation between liquidus and solidus has been extensively studied in ground based, high magnetic field and Spacelab experiments. Two alloys of mercury cadmium telluride have been studied; with 80.0 mole percent of HgTe and 84.8 mole percent of HgTe respectively, the remainder being cadmium telluride. Such alloys are extremely difficult to grow by directional solidification on earth due to high solutal and thermal density differences that give rise to fluid flow and consequent loss of interface shape and composition. Diffusion controlled growth is therefore impossible to achieve in conventional directional solidification. The ground based experiments consisted of growing crystals in several different configurations of heat pipe furnaces, NASA's Advanced Automated Directional Solidification Furnace (AADSF), and a similar furnace incorporated in a superconducting magnet capable of operating at up to 5T. The first microgravity experiment took place during the flight of STS-62 in March 1994, with the AADSF installed on the second United States Microgravity Payload (USMP-2). The alloy was solidified at 3/4 inch per day over a 9 day period, and for the first time a detailed evaluation was performed correlating composition variations to measured residual acceleration. The second flight experiment took place in the fourth United States Microgravity Payload Mission (USMP-4) in November 1997. Due to contamination of the furnace system, analysis shows that the conditions prevailing during the experiment were quite different from the requirements requested prior to the mission. The results indicate that the sample did accomplish the desired objectives.

  5. Crystal growth methods dedicated to low solubility actinide oxalates

    Energy Technology Data Exchange (ETDEWEB)

    Tamain, C., E-mail: christelle.tamain@cea.fr [CEA, Nuclear Energy Division, Marcoule, RadioChemistry & Processes Department, F-30207 Bagnols sur Cèze (France); Arab-Chapelet, B. [CEA, Nuclear Energy Division, Marcoule, RadioChemistry & Processes Department, F-30207 Bagnols sur Cèze (France); Rivenet, M. [University Lille Nord de France, Unité de Catalyse et de Chimie du Solide, UCCS UMR CNRS 8181, ENSCL-USTL, B.P. 90108, F-59652 Villeneuve d’Ascq Cedex (France); Grandjean, S. [CEA, Nuclear Energy Division, Marcoule, RadioChemistry & Processes Department, F-30207 Bagnols sur Cèze (France); Abraham, F. [University Lille Nord de France, Unité de Catalyse et de Chimie du Solide, UCCS UMR CNRS 8181, ENSCL-USTL, B.P. 90108, F-59652 Villeneuve d’Ascq Cedex (France)

    2016-04-15

    Two novel crystal growth syntheses dedicated to low solubility actinide-oxalate systems and adapted to glove box handling are described. These methods based on the use of precursors of either actinide metal or oxalic acid have been optimized on lanthanide systems (analogue of actinides(III)) and then assessed on real actinide systems. They allow the synthesis of several actinide oxalate single crystals, Am{sub 2}(C{sub 2}O{sub 4}){sub 3}(H{sub 2}O){sub 3}·xH{sub 2}O, Th(C{sub 2}O{sub 4}){sub 2}·6H{sub 2}O, M{sub 2+x}[Pu{sup IV}{sub 2−x}Pu{sup III}{sub x}(C{sub 2}O{sub 4}){sub 5}]·nH{sub 2}O and M{sub 1−x}[Pu{sup III}{sub 1−x}Pu{sup IV}{sub x}(C{sub 2}O{sub 4}){sub 2}·H{sub 2}O]·nH{sub 2}O. It is the first time that these well-known compounds are formed by crystal growth methods, thus enabling direct structural studies on transuranic element systems and acquisition of basic data beyond deductions from isomorphic (or not) lanthanide compounds. Characterizations by X-ray diffraction, UV–visible solid spectroscopy, demonstrate the potentialities of these two crystal growth methods to obtain oxalate compounds. - Graphical abstract: Two new single crystal growth methods dedicated to actinide oxalate compounds. - Highlights: • Use of diester as oxalate precursor for crystal growth of actinide oxalates. • Use of actinide oxide as precursor for crystal growth of actinide oxalates. • Crystal growth of Pu(III) and Am(III) oxalates. • Crystal growth of mixed Pu(III)/Pu(IV) oxalates.

  6. Growth and characterization of DAST crystal with large-thickness

    Science.gov (United States)

    Cao, Lifeng; Teng, Bing; Zhong, Degao; Hao, Lun; Sun, Qing

    2016-10-01

    Highly nonlinear optical 4-N, N-dimethylamino-4-N-methyl stilbazolium tosylate (DAST) crystals with large surface and thickness was grown by the slope nucleation technology with slow-cooling in a high concentration solution. The structure and composition of the crystal were confirmed by X-ray diffraction (XRD). The surface morphology of the crystal was characterized by optical microscope. Growth layers were observed on the (001) surface and several isolated "island layers" were also found. The mechanism of crystal growth was analyzed. Etching behavior of the (001) and (00 1 bar) faces of the crystal was studied with methanol, respectively. Optical properties of the crystal were also characterized by UV-vis-NIR spectrometer. The dielectric constants and the dielectric loss were tested by impedance analyzer.

  7. Development of novel growth methods for halide single crystals

    Science.gov (United States)

    Yokota, Yuui; Kurosawa, Shunsuke; Shoji, Yasuhiro; Ohashi, Yuji; Kamada, Kei; Yoshikawa, Akira

    2017-03-01

    We developed novel growth methods for halide scintillator single crystals with hygroscopic nature, Halide micro-pulling-down [H-μ-PD] method and Halide Vertical Bridgman [H-VB] method. The H-μ-PD method with a removable chamber system can grow a single crystal of halide scintillator material with hygroscopicity at faster growth rate than the conventional methods. On the other hand, the H-VB method can grow a large bulk single crystal of halide scintillator without a quartz ampule. CeCl3, LaBr3, Ce:LaBr3 and Eu:SrI2 fiber single crystals could be grown by the H-μ-PD method and Eu:SrI2 bulk single crystals of 1 and 1.5 inch in diameter could be grown by the H-VB method. The grown fiber and bulk single crystals showed comparable scintillation properties to the previous reports using the conventional methods.

  8. Large-volume protein crystal growth for neutron macromolecular crystallography.

    Science.gov (United States)

    Ng, Joseph D; Baird, James K; Coates, Leighton; Garcia-Ruiz, Juan M; Hodge, Teresa A; Huang, Sijay

    2015-04-01

    Neutron macromolecular crystallography (NMC) is the prevailing method for the accurate determination of the positions of H atoms in macromolecules. As neutron sources are becoming more available to general users, finding means to optimize the growth of protein crystals to sizes suitable for NMC is extremely important. Historically, much has been learned about growing crystals for X-ray diffraction. However, owing to new-generation synchrotron X-ray facilities and sensitive detectors, protein crystal sizes as small as in the nano-range have become adequate for structure determination, lessening the necessity to grow large crystals. Here, some of the approaches, techniques and considerations for the growth of crystals to significant dimensions that are now relevant to NMC are revisited. These include experimental strategies utilizing solubility diagrams, ripening effects, classical crystallization techniques, microgravity and theoretical considerations.

  9. Nucleation and structural growth of cluster crystals

    CERN Document Server

    Leitold, Christian

    2016-01-01

    We study the nucleation of crystalline cluster phases in the generalized exponential model with exponent n=4. Due to the finite value of this pair potential for zero separation, at high densities the system forms cluster crystals with multiply occupied lattice sites. Here, we investigate the microscopic mechanisms that lead to the formation of cluster crystals from a supercooled liquid in the low-temperature region of the phase diagram. Using molecular dynamics and umbrella sampling, we calculate the free energy as a function of the size of the largest crystalline nucleus in the system, and compare our results with predictions from classical nucleation theory. Employing bond-order parameters based on a Voronoi tessellation to distinguish different crystal structures, we analyze the average composition of crystalline nuclei. We find that even for conditions where a multiply-occupied fcc crystal is the thermodynamically stable phase, the nucleation into bcc cluster crystals is strongly preferred. Furthermore, w...

  10. Nonlinear Optical BBO Crystals: Growth, Properties and Applications

    Institute of Scientific and Technical Information of China (English)

    唐鼎元

    2000-01-01

    Low temperature phase barium metaborate β-BaB2O4 (BBO) is an important nonlinear optical material. Up to now, the BBO single crystals with large size and good optical quality were grown from Na2O or NaF fluxed solvents by the top-seeded solution growth (TSSG) technique with or without pulling. In order to improve the growth rate and quality of BBO crystals, several new techniques such as continuous feeding, forced stirring and cooling growing crystals etc. have been suggested. Applications of BBO as an excellent nonlinear optical crystal include mainly frequency conversion of various laser radiation, high average power frequency conversion, frequency doubling of ultrashort pulses and broadly tunable optical parametric oscillators (OPO).This paper is a brief review on the growth, properties and applications of BBO crystals.

  11. Modelling of Heat Transfer in Single Crystal Growth

    CERN Document Server

    Zhmakin, Alexander I

    2014-01-01

    An attempt is made to review the heat transfer and the related problems encountered in the simulation of single crystal growth. The peculiarities of conductive, convective and radiative heat transfer in the different melt, solution, and vapour growth methods are discussed. The importance of the adequate description of the optical crystal properties (semitransparency, specular reflecting surfaces) and their effect on the heat transfer is stresses. Treatment of the unknown phase boundary fluid/crystal as well as problems related to the assessment of the quality of the grown crystals (composition, thermal stresses, point defects, disclocations etc.) and their coupling to the heat transfer/fluid flow problems is considered. Differences between the crystal growth simulation codes intended for the research and for the industrial applications are indicated. The problems of the code verification and validation are discussed; a brief review of the experimental techniques for the study of heat transfer and flow structu...

  12. Effect of the laser sputtering parameters on the orientation of a cerium oxide buffer layer on sapphire and the properties of a YBa2Cu3Ox superconducting film

    DEFF Research Database (Denmark)

    Mozhaev, P. B.; Ovsyannikov, G. A.; Skov, Johannes

    1999-01-01

    The effect of the laser sputtering parameters on the crystal properties of CeO2 buffer layers grown on a (1 (1) under bar 02) sapphire substrate and on the properties of superconducting YBa2Cu3Ox thin films are investigated. It is shown that (100) and (111) CeO2 growth is observed, depending...

  13. Zeolite Crystal Growth (ZCG) Flight on USML-2

    Science.gov (United States)

    Sacco, Albert, Jr.; Bac, Nurcan; Warzywoda, Juliusz; Guray, Ipek; Marceau, Michelle; Sacco, Teran L.; Whalen, Leah M.

    1997-01-01

    The extensive use of zeolites and their impact on the world's economy has resulted in many efforts to characterize their structure, and improve the knowledge base for nucleation and growth of these crystals. The zeolite crystal growth (ZCG) experiment on USML-2 aimed to enhance the understanding of nucleation and growth of zeolite crystals, while attempting to provide a means of controlling the defect concentration in microgravity. Zeolites A, X, Beta, and Silicalite were grown during the 16 day - USML-2 mission. The solutions where the nucleation event was controlled yielded larger and more uniform crystals of better morphology and purity than their terrestrial/control counterparts. The external surfaces of zeolite A, X, and Silicalite crystals grown in microgravity were smoother (lower surface roughness) than their terrestrial controls. Catalytic studies with zeolite Beta indicate that crystals grown in space exhibit a lower number of Lewis acid sites located in micropores. This suggests fewer structural defects for crystals grown in microgravity. Transmission electron micrographs (TEM) of zeolite Beta crystals also show that crystals grown in microgravity were free of line defects while terrestrial/controls had substantial defects.

  14. A Multiscale simulation method for ice crystallization and frost growth

    Science.gov (United States)

    Yazdani, Miad

    2015-11-01

    Formation of ice crystals and frost is associated with physical mechanisms at immensely separated scales. The primary focus of this work is on crystallization and frost growth on a cold plate exposed to the humid air. The nucleation is addressed through Gibbs energy barrier method based on the interfacial energy of crystal and condensate as well as the ambient and surface conditions. The supercooled crystallization of ice crystals is simulated through a phase-field based method where the variation of degree of surface tension anisotropy and its mode in the fluid medium is represented statistically. In addition, the mesoscale width of the interface is quantified asymptotically which serves as a length-scale criterion into a so-called ``Adaptive'' AMR (AAMR) algorithm to tie the grid resolution at the interface to local physical properties. Moreover, due to the exposure of crystal to humid air, a secondary non-equilibrium growth process contributes to the formation of frost at the tip of the crystal. A Monte-Carlo implementation of Diffusion Limited Aggregation method addresses the formation of frost during the crystallization. Finally, a virtual boundary based Immersed Boundary Method (IBM) is adapted to address the interaction of ice crystal with convective air during its growth.

  15. Imaging and interferometric analysis of protein crystal growth

    Science.gov (United States)

    Raghunandan, Ranjini; Gupta, Anamika Sethia; Muralidhar, K.

    2008-04-01

    Protein crystals are grown under controlled temperature, concentration and vapor pressure conditions, usually by vapor diffusion, liquid-liquid diffusion and dialysis techniques. The present study examines the effects of protein concentration, drop size and reservoir height on the crystal growth of Hen Egg White Lysozyme (HEWL). Crystals are grown by the hanging drop vapor diffusion method using Modular VDX TM Plates. Due to the vapor pressure difference created between the protein drop and the reservoir, evaporation takes place till equilibrium is attained. Crystal formation takes place after a certain level of supersaturation is attained when the protein precipitates out in crystalline form. The observations revealed that the growth is faster for higher lysozyme concentration, smaller drop sizes and larger reservoir heights. The morphology of the crystals is viewed during the growth process using stereomicroscope. The number of crystals formed is the maximum for higher concentrations, drop sizes and reservoir heights. When the number of crystals formed is less, the size of the crystals is comparatively larger. The effect of evaporation of water vapor from the protein drop into the reservoir is studied using Mach-Zehnder interferometry. The recorded interferograms and shadowgraph images indicate the diffusion of condensed water into the reservoir. The radius of the drop is determined using the shadowgraph images of the growth process. The radius decreases with evaporation and the rate of decrease of radius is highest for higher protein concentrations, smaller drop sizes and larger reservoir heights.

  16. Growth features of ammonium hydrogen -tartrate single crystals

    Indian Academy of Sciences (India)

    G Sajeevkumar; R Raveendran; B S Remadevi; Alexander Varghese Vaidyan

    2004-08-01

    Ammonium hydrogen -tartrate (-AHT) single crystals were grown in silica gel. The growth features of these crystals with variation of parameters like specific gravity of the gel, gel pH, acid concentrations, concentration of the feed solution and gel age were studied in detail.

  17. Cross-twinning model of fcc crystal growth

    NARCIS (Netherlands)

    Waal, van de Benjamin W.

    1996-01-01

    The theory developed in 1960 by Wagner, Hamilton and Seidensticker (WHS-theory) to explain observed crystal growth phenomena in Ge is critically reviewed and shown to be capable of explaining preservation of ABC stacking order in two dimensions in fcc crystals of effectively spherical closed shell m

  18. An automatic system for crystal growth studies at constant supersaturation

    Science.gov (United States)

    March, J. G.; Costa-Bauzá, A.; Grases, F.; Söhnel, O.

    1992-01-01

    An automatic system for growing crystals from seeded supersaturated solutions at constant supersaturation is described. Control of burettes and data acquisition are controlled by computer. The system was tested with a study of the calcium oxalate kinetics of crystal growth. PMID:18924950

  19. Modeling and simulation of Si crystal growth from melt

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Lijun; Liu, Xin; Li, Zaoyang [National Engineering Research Center for Fluid Machinery and Compressors, School of Energy and Power Engineering, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Miyazawa, Hiroaki; Nakano, Satoshi; Kakimoto, Koichi [Research Institute for Applied Mechanics, Kyushu University, Kasuga 816-8580 (Japan)

    2009-07-01

    A numerical simulator was developed with a global model of heat transfer for any crystal growth taking place at high temperature. Convective, conductive and radiative heat transfers in the furnace are solved together in a conjugated way by a finite volume method. A three-dimensional (3D) global model was especially developed for simulation of heat transfer in any crystal growth with 3D features. The model enables 3D global simulation be conducted with moderate requirement of computer resources. The application of this numerical simulator to a CZ growth and a directional solidification process for Si crystals, the two major production methods for crystalline Si for solar cells, was introduced. Some typical results were presented, showing the importance and effectiveness of numerical simulation in analyzing and improving these kinds of Si crystal growth processes from melt. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. The crystal growth of barium flouride in aqueous solution

    Science.gov (United States)

    Barone, J. P.; Svrjcek, D.; Nancollas, G. H.

    1983-06-01

    The kinetics of growth of barium flouride seed crystals were investigated in aqueous solution at 25°C using a constant composition method, in which the supersaturation and ionic strength were maintained constant by the addition of titrants consisting of barium nitrate and potassium flouride solutions. The rates of reaction, studied over a range of supersaturation (σ ≈ 0.4 to 1.0), were interpreted in terms of crystal growth models. A spiral growth mechanism best describes the data, and scanning electron microscopy indicates a three-dimensional growth. In the presence of inorganic additives such as phosphate, however, induction periods precede a morphological two-dimensional crystallization. Coulter Counter results show little crystal agglomeration.

  1. Crystal size growth in the liquid phase methanol synthesis catalyst

    Energy Technology Data Exchange (ETDEWEB)

    Sawant, A.; Lee, S.; Foos, A.

    1988-01-01

    The phenomenon of crystal growth in the methanol synthesis catalyst has been studied. Crystallite size distributions in the CuO/ZnO/Al/sub 2/O/sub 3/ methanol synthesis catalyst have been determined. The effects of temperature, reaction environment and time under reaction conditions have been studied. It is observed that water in the reaction mixture promotes crystal growth. 26 refs., 10 figs., 1 tab.

  2. Kinetics of the growth of filamentary KH2PO4 crystals on a seed crystal

    Science.gov (United States)

    Titaeva, E. K.; Kuritsyn, M. S.; Noskova, A. N.; Portnov, V. N.

    2017-08-01

    At oversaturations exceeding the inert range end for face {101} due to the presence of admixture Al(NO3)3 · 9H2O, a new phase is observed during the growth of this face in the form of filamentary crystals. Some experimental dependences of the growth rate of filamentary potassium dihydrophosphate (KH2PO4) crystals on the oversaturation have been obtained at different admixture concentrations. The growth of filamentary crystals occurs by the mechanism of two-dimensional nucleation. Their formation is governed by the effect of [AlHPO4]+ complexes in the form of Cabrera and Vermilyea stoppers.

  3. Theory of the intermediate stage of crystal growth with applications to insulin crystallization

    Science.gov (United States)

    Barlow, D. A.

    2017-07-01

    A theory for the intermediate stage of crystal growth, where two defining equations one for population continuity and another for mass-balance, is used to study the kinetics of the supersaturation decay, the homogeneous nucleation rate, the linear growth rate and the final distribution of crystal sizes for the crystallization of bovine and porcine insulin from solution. The cited experimental reports suggest that the crystal linear growth rate is directly proportional to the square of the insulin concentration in solution for bovine insulin and to the cube of concentration for porcine. In a previous work, it was shown that the above mentioned system could be solved for the case where the growth rate is directly proportional to the normalized supersaturation. Here a more general solution is presented valid for cases where the growth rate is directly proportional to the normalized supersaturation raised to the power of any positive integer. The resulting expressions for the time dependent normalized supersaturation and crystal size distribution are compared with experimental reports for insulin crystallization. An approximation for the maximum crystal size at the end of the intermediate stage is derived. The results suggest that the largest crystal size in the distribution at the end of the intermediate stage is maximized when nucleation is restricted to be only homogeneous. Further, the largest size in the final distribution depends only weakly upon the initial supersaturation.

  4. Growth and characterization of lead bromide crystals

    Science.gov (United States)

    Singh, N. B.; Gottlieb, M.; Henningsen, T.; Hopkins, R. H.; Mazelsky, R.; Glicksman, M. E.; Coriell, S. R.; Santoro, G. J.; Duval, W. M. B.

    1992-01-01

    Lead(II) bromide was purified by a combination of directional freezing and zone-refining methods. Differential thermal analysis of the lead bromide showed that a destructive phase transformation occurs below the melting temperature. This transformation causes extensive cracking, making it very difficult to grow a large single crystal. Energy of phase transformation for pure lead bromide was determined to be 24.67 cal/g. To circumvent this limitation, crystals were doped by silver bromide which decreased the energy of phase transformation. The addition of silver helped in achieving the size, but enhanced the inhomogeneity in the crystal. The acoustic attenuation constant was almost identical for the pure and doped (below 3000 ppm) crystals.

  5. Growth and characterization of strontium tartrate pentahydrate crystals

    Energy Technology Data Exchange (ETDEWEB)

    Firdous, A.; Ahmad, M.M. [Department of Physics, National Institute of Technology, Kashmir (India); Quasim, I.; Kotru, P.N. [Crystal Growth and Materials Research Laboratory, Department of Physics and Electronics, University of Jammu (India)

    2008-10-15

    Silica gel impregnated with L-tartaric acid and using strontium nitrate as the second reactant leads to the growth of well faceted strontium tartrate pentahydrate single crystals.The morphological developmen and internal cell dimensions are observed to be different from the ones reported in the literature for strontium tartrate trihydrate crystals. The crystals are characterized using XRD, CH analysis, SEM, FTIR spectroscopy and thermoanalytical techniques. The crystals are observed to be thermally stable upto about 105 C but thereafter start decomposing and ejecting water of hydration at various stages, finally reducing to strontium oxide. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Growth morphology and structural characteristic of C70single crystals

    Institute of Scientific and Technical Information of China (English)

    周维亚; 解思深; 吴源; 常保和; 王刚; 钱露茜

    1999-01-01

    Large size C70 single crystals with the dimension of more than 5 mm are grown from the vapor phase by controlling nucleation. X-ray diffraction and electron diffraction confirm that in the C70 single crystal a phase of the hexagonal close-packed (hcp) structure coexists with a minor face-center-cubic (fcc) phase at room temperature. The morphologies and their formation mechanism of the C70 single crystals are investigated by means of scanning electron microscopy and optical microscopy. The influence of growth conditions on the morphologies of C70 single crystals is discussed.

  7. Growth and characterization of CdS crystals

    Science.gov (United States)

    Su, Ching-Hua; Lehoczky, S. L.; Szofran, F. R.

    1990-01-01

    A growth method for the physical vapor transport of compound semiconductors in closed ampoules is described. With the unique techniques applied in the heat treatment of the starting materials and the temperature profiles provided by the three-zone translational furnace, large crystals of CdS have been grown successfully by the method at lower temperatures than previously used. Both unseeded and seeded growth have been investigated. The CdS crystals were examined using optical and scanning electron microscopies (SEM) to study the microstructure and the dislocation etch-pits. The crystals were further characterized by infrared (IR) and ultraviolet (UV) transmission measurements.

  8. Skylab experiments on semiconductors and alkali halides. [single crystal growth

    Science.gov (United States)

    Lundquist, C. A.

    1974-01-01

    The space processing experiments performed during the Skylab missions included one on single crystal growth of germanium selenide and telluride, one on pure and doped germanium crystals, two on pure and doped indium antimonide, one on gallium-indium-antimony systems, and one on a sodium chloride-sodium fluoride eutectic. In each experiment, three ampoules of sample were processed in the multipurpose electric furnace within the Skylab Materials Processing Facility. All were successful in varying degrees and gave important information about crystal growth removed from the effects of earth surface gravity.

  9. Fluid mechanics in crystal growth - The 1982 Freeman scholar lecture

    Science.gov (United States)

    Ostrach, S.

    1983-01-01

    An attempt is made to unify the current state of knowledge in crystal growth techniques and fluid mechanics. After identifying important fluid dynamic problems for such representative crystal growth processes as closed tube vapor transport, open reactor vapor deposition, and the Czochralski and floating zone melt growth techniques, research results obtained to date are presented. It is noted that the major effort to date has been directed to the description of the nature and extent of bulk transport under realistic conditions, where bulk flow determines the heat and solute transport which strongly influence the temperature and concentration fields in the vicinity of the growth interface. Proper treatment of near field, or interface, problems cannot be given until the far field, or global flow, involved in a given crystal growth technique has been adequately described.

  10. Growth and characterization of diammonium copper disulphate hexahydrate single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Siva Sankari, R. [Department of Physics, Agni College of Technology, Thalambur, Chennai 603103 (India); Perumal, Rajesh Narayana, E-mail: r.shankarisai@gmail.com [Department of Physics, SSN College of Engineering, Kalavakkam, Chennai 603110 (India)

    2014-03-01

    Graphical abstract: Diammonium copper disulphate hexahydrate (DACS) is one of the most promising inorganic dielectric crystals with exceptional mechanical properties. Good quality crystals of DACS were grown by using solution method in a period of 30 days. The grown crystals were subjected to single crystal X-ray diffraction analysis in order to establish their crystalline nature. Thermo gravimetric, differential thermal analysis, FTIR, and UV–vis–NIR analysis were performed for the crystal. Several solid state physical parameters have been determined for the grown crystals. The dielectric constant and the dielectric loss and AC conductivity of the grown crystal were studied as a function of frequency and temperature has been calculated and plotted. - Highlights: • Diammonium copper disulphate is grown for the first time and CCDC number obtained. • Thermal analysis is done to see the stability range of the crystals. • Band gap and UV cut off wavelength of the crystal are determined to be 2.4 eV and 472.86 nm, respectively. • Dielectric constant, dielectric loss and AC conductivity are plotted as a function of applied field. - Abstract: Diammonium copper disulphate hexahydrate is one of the most promising inorganic crystals with exceptional dielectric properties. A good quality crystal was harvested in a 30-day period using solution growth method. The grown crystal was subjected to various characterization techniques like single crystal X-ray diffraction analysis, thermo gravimetric, differential thermal analysis, FTIR, and UV–vis–NIR analysis. Unit cell dimensions of the grown crystal have been identified from XRD studies. Functional groups of the title compounds have been identified from FTIR studies. Thermal stability of the samples was checked by TG/DTA studies. Band gap of the crystal was calculated. The dielectric constant and dielectric loss were studied as a function of frequency of the applied field. AC conductivity was plotted as a function

  11. Transmission Electron Microscopy (TEM) Sample Preparation of Si(1-x)Gex in c-Plane Sapphire Substrate

    Science.gov (United States)

    Kim, Hyun Jung; Choi, Sang H.; Bae, Hyung-Bin; Lee, Tae Woo

    2012-01-01

    The National Aeronautics and Space Administration-invented X-ray diffraction (XRD) methods, including the total defect density measurement method and the spatial wafer mapping method, have confirmed super hetero epitaxy growth for rhombohedral single crystalline silicon germanium (Si1-xGex) on a c-plane sapphire substrate. However, the XRD method cannot observe the surface morphology or roughness because of the method s limited resolution. Therefore the authors used transmission electron microscopy (TEM) with samples prepared in two ways, the focused ion beam (FIB) method and the tripod method to study the structure between Si1-xGex and sapphire substrate and Si1?xGex itself. The sample preparation for TEM should be as fast as possible so that the sample should contain few or no artifacts induced by the preparation. The standard sample preparation method of mechanical polishing often requires a relatively long ion milling time (several hours), which increases the probability of inducing defects into the sample. The TEM sampling of the Si1-xGex on sapphire is also difficult because of the sapphire s high hardness and mechanical instability. The FIB method and the tripod method eliminate both problems when performing a cross-section TEM sampling of Si1-xGex on c-plane sapphire, which shows the surface morphology, the interface between film and substrate, and the crystal structure of the film. This paper explains the FIB sampling method and the tripod sampling method, and why sampling Si1-xGex, on a sapphire substrate with TEM, is necessary.

  12. Protein crystal growth and the International Space Station

    Science.gov (United States)

    DeLucas, L. J.; Moore, K. M.; Long, M. M.

    1999-01-01

    Protein structural information plays a key role in understanding biological structure-function relationships and in the development of new pharmaceuticals for both chronic and infectious diseases. The Center for Macromolecular Crystallography (CMC) has devoted considerable effort studying the fundamental processes involved in macromolecular crystal growth both in a 1-g and microgravity environment. Results from experiments performed on more than 35 U.S. space shuttle flights have clearly indicated that microgravity can provide a beneficial environment for macromolecular crystal growth. This research has led to the development of a new generation of pharmaceuticals that are currently in preclinical or clinical trials for diseases such as cutaneous T-cell lymphoma, psoriasis, rheumatoid arthritis, AIDS, influenza, stroke and other cardiovascular complications. The International Space Station (ISS) provides an opportunity to have complete crystallographic capability on orbit, which was previously not possible with the space shuttle orbiter. As envisioned, the x-ray Crystallography Facility (XCF) will be a complete facility for growing protein crystals; selecting, harvesting, and mounting sample crystals for x-ray diffraction; cryo-freezing mounted crystals if necessary; performing x-ray diffraction studies; and downlinking the data for use by crystallographers on the ground. Other advantages of such a facility include crystal characterization so that iterations in the crystal growth conditions can be made, thereby optimizing the final crystals produced in a three month interval on the ISS.

  13. Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Amano, Hiroshi [Department of Electrical Engineering and Computer Science, Venture Business Laboratory, Akasaki Research Center, Nagoya University (Japan)

    2015-06-15

    This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs. The most important work was done in the mid to late 1980s. The background to the author's work and the process by which the technology enabling the growth of GaN and the realization of p-type GaN was established are reviewed. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Slanted stacking faults and persistent face centered cubic crystal growth in sedimentary colloidal hard sphere crystals

    NARCIS (Netherlands)

    Hilhorst, J.; Wolters, J. R.; Petukhov, A.V.

    2010-01-01

    Hard sphere crystal growth is a delicate interplay between kinetics and thermodynamics, where the former is commonly thought to favour a random hexagonal close packed structure and the latter leads to a face centered cubic crystal. In this article, we discuss the influence of slanted stacking faults

  15. Crystal growth of CVD diamond and some of its peculiarities

    CERN Document Server

    Piekarczyk, W

    1999-01-01

    Experiments demonstrate that CVD diamond can form in gas environments that are carbon undersaturated with respect to diamond. This fact is, among others, the most serious violation of principles of chemical thermodynamics. In this $9 paper it is shown that none of the principles is broken when CVD diamond formation is considered not a physical process consisting in growth of crystals but a chemical process consisting in accretion of macro-molecules of polycyclic $9 saturated hydrocarbons belonging to the family of organic compounds the smallest representatives of which are adamantane, diamantane, triamantane and so forth. Since the polymantane macro-molecules are in every respect identical with $9 diamond single crystals with hydrogen-terminated surfaces, the accretion of polymantane macro- molecules is a process completely equivalent to the growth of diamond crystals. However, the accretion of macro-molecules must be $9 described in a way different from that used to describe the growth of crystals because so...

  16. Chemical Bond Analysis of Single Crystal Growth of Magnesium Oxide

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Starting from the crystallographic structure of magnesium oxide (MgO), both the chemical bond model of solids and Pauling's third rule (polyhedral sharing rule) were employed to quantitatively analyze the chemical bonding structure of constituent atoms and single crystal growth. Our analytical results show that MgO single crystals prefer to grow along the direction and the growth rate of the {100} plane is the slowest one. Therefore, the results show that the {100} plane of MgO crystals can be the ultimate morphology face, which is in a good agreement with our previous experimental results. The study indicate that the structure analysis is an effective tool to control the single-crystal growth.

  17. Selectivity of Crystal Growth Direction in Layered Double Hydroxides

    Institute of Scientific and Technical Information of China (English)

    赵芸; 梁吉; 李峰; 段雪

    2004-01-01

    Investigation of selectivity of crystal growth direction in layered double hydroxides is helpful to control their particle sizes in different directions. Mg-Al layered double hydroxides (LDHs) were synthesized using a coprecipitation method. The influences of aging temperature, aging time, and Mg/Al molar ratio on the crystal structure, the LDHs particle size, and the selectivity of crystal growth in different directions were investigated. The results show that the size of the crystallites in the a direction is larger than that in the c direction for all experimental conditions, indicating faster crystal growth in the a direction than in the c direction. The crystallite sizes in the a and c directions both increase with decreasing Mg/Al molar ratio but with less difference between the sizes in the two directions. Therefore, the crystal growth rate in the c direction increases more than that in the a direction as the Mg/Al molar ratio decreases. The influence of the aging time, aging temperature, and Mg/Al molar ratio on the selectivity of the crystal growth direction can be used to prepare LDHs with selected sizes in the a and c directions.

  18. Crystal Growth and Characterization of Bil3

    Science.gov (United States)

    Hayes, Julia; Chen, Kuo-Tong; Burger, Arnold

    1997-01-01

    Bismuth tri-iodide (BiI3) have been grown by physical vapor transport (PVT), and by the Bridgman (melt) method. These crystals along with pure and stoichiometric BiI3 powder have been investigated by differential scanning calorimetry (DSC). The DSC results show that pure BiI3 powder has no phase transition and melts around 408 C. While we found no evidence for the high temperature dissociation of BiI3, the DSC measurements show that crystals grown from melt method contain a significantly large amount of Bi-rich phases than crystals grown from PVT method, as indicated by phase transition detected at 270, 285, 298 and 336 C.

  19. The growth of ruby single crystals

    Directory of Open Access Journals (Sweden)

    ALEKSANDAR GOLUBOVIC

    2005-02-01

    Full Text Available Ruby (Cr:Al2O3 single crystals were grown by the Czochralski technique in an argon atmosphere. The critical crystal diameter dc = 1.0 cm and the critical rate of rotation wc = 20 rpm were calculated by equations of the hydrodynamics of the melt. The rate of crystal growthwas experimentally obtained to be 2.7 mm/h. For chemical polishing, conc. H3PO4 at 593 K for an exposure of 3 hours was determined. Conc. H3PO4 at 523 K for an exposure of 3 h was found to be a suitable etching solution. The lattice parameters a = 0.47627(6 nm and c = 1.301(1 nm were determined by X-ray powder diffraction. The obtained results are discussed and compared with published data.

  20. Growth and characterization of doped LiF crystals

    Energy Technology Data Exchange (ETDEWEB)

    Khan, S.; Kim, H. J. [Kyungpook National University, Daegu (Korea, Republic of); Rooh, G. [Abdul Wali Khan University, Mardan (Pakistan); Kim, S. H. [Cheongju University, Cheongju (Korea, Republic of)

    2014-12-15

    Transparent and crack-free crystals of LiF:x (x = Ca, Pb, Na, Tl) were successfully grown by using the Czochralski method. Growth parameters such as the pulling and the rotation rates were optimized. The grown crystals were characterized and compared by using X-ray luminescence. Tl- and Na-doped crystals showed better luminescence intensity than crystals with other dopants. Thermoluminescence (TL) glow curves were obtained to study the crystal defects in the grown samples. Activation energies were calculated from the TL glow curves. The temperature dependence of the light yield in the temperature range from 10 to 300 K under alpha particle excitation was also investigated. The light yield was found to be larger at low temperatures. Na- and Tl-doped crystals showed 35% and 20% increases in the light yield, respectively, at low temperatures as compared to room temperature.

  1. Growth of Tungsten Bronze Family Crystals

    Science.gov (United States)

    1989-03-01

    retracti e index nuclear activation of undoped and cerium-doped SBN. Since undoped SBN is photorefractie while containing only trace These equations %ere...Boules as large as 2 to 2.5 cm in diameter are now routinely grown. AXIS APERTURlE OMAA RETICON ABERRATOR r. POLARIZATIONI , ~ SSN ETALI Rt EAM ’SPLITTER...1tMl-R 1A, (REFERENCE OMIA WITH CRYSTAL SBN Cxi SEIN CeRETICON PHOTODIODE RETICON PHOTODIODE I POLARIZED EXTRAORDINARY OMAA (REFERENCE C2= CRYSTAL 9O I

  2. Effects of impurities on growth habit of KDP crystal

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The effects of metaphosphate, boric acid and quaternary ammonium cations with different concentration on the growth habit of KDP crystal are reported. The results are analyzed and discussed, which show that the effects of different impurities on the growth habit of KDP are not the same. It is due to the different adsorption mechanism of the impurities.

  3. Spontaneous formation of GaN/AlN core-shell nanowires on sapphire by hydride vapor phase epitaxy

    Science.gov (United States)

    Trassoudaine, Agnès; Roche, Elissa; Bougerol, Catherine; André, Yamina; Avit, Geoffrey; Monier, Guillaume; Ramdani, Mohammed Réda; Gil, Evelyne; Castelluci, Dominique; Dubrovskii, Vladimir G.

    2016-11-01

    Spontaneous GaN/AlN core-shell nanowires with high crystal quality were synthesized on sapphire substrates by vapor-liquid-solid hydride vapor phase epitaxy (VLS-HVPE) without any voluntary aluminum source. Deposition of aluminum is difficult to achieve in this growth technique which uses metal-chloride gaseous precursors: the strong interaction between the AlCl gaseous molecules and the quartz reactor yields a huge parasitic nucleation on the walls of the reactor upstream the substrate. We open up an innovative method to produce GaN/AlN structures by HVPE, thanks to aluminum etching from the sapphire substrate followed by redeposition onto the sidewalls of the GaN core. The paper presents the structural characterization of GaN/AlN core-shell nanowires, speculates on the growth mechanism and discusses a model which describes this unexpected behavior.

  4. Molecular modifiers reveal a mechanism of pathological crystal growth inhibition

    Science.gov (United States)

    Chung, Jihae; Granja, Ignacio; Taylor, Michael G.; Mpourmpakis, Giannis; Asplin, John R.; Rimer, Jeffrey D.

    2016-08-01

    Crystalline materials are crucial to the function of living organisms, in the shells of molluscs, the matrix of bone, the teeth of sea urchins, and the exoskeletons of coccoliths. However, pathological biomineralization can be an undesirable crystallization process associated with human diseases. The crystal growth of biogenic, natural and synthetic materials may be regulated by the action of modifiers, most commonly inhibitors, which range from small ions and molecules to large macromolecules. Inhibitors adsorb on crystal surfaces and impede the addition of solute, thereby reducing the rate of growth. Complex inhibitor-crystal interactions in biomineralization are often not well elucidated. Here we show that two molecular inhibitors of calcium oxalate monohydrate crystallization—citrate and hydroxycitrate—exhibit a mechanism that differs from classical theory in that inhibitor adsorption on crystal surfaces induces dissolution of the crystal under specific conditions rather than a reduced rate of crystal growth. This phenomenon occurs even in supersaturated solutions where inhibitor concentration is three orders of magnitude less than that of the solute. The results of bulk crystallization, in situ atomic force microscopy, and density functional theory studies are qualitatively consistent with a hypothesis that inhibitor-crystal interactions impart localized strain to the crystal lattice and that oxalate and calcium ions are released into solution to alleviate this strain. Calcium oxalate monohydrate is the principal component of human kidney stones and citrate is an often-used therapy, but hydroxycitrate is not. For hydroxycitrate to function as a kidney stone treatment, it must be excreted in urine. We report that hydroxycitrate ingested by non-stone-forming humans at an often-recommended dose leads to substantial urinary excretion. In vitro assays using human urine reveal that the molecular modifier hydroxycitrate is as effective an inhibitor of nucleation

  5. A microfluidic, high throughput protein crystal growth method for microgravity.

    Directory of Open Access Journals (Sweden)

    Carl W Carruthers

    Full Text Available The attenuation of sedimentation and convection in microgravity can sometimes decrease irregularities formed during macromolecular crystal growth. Current terrestrial protein crystal growth (PCG capabilities are very different than those used during the Shuttle era and that are currently on the International Space Station (ISS. The focus of this experiment was to demonstrate the use of a commercial off-the-shelf, high throughput, PCG method in microgravity. Using Protein BioSolutions' microfluidic Plug Maker™/CrystalCard™ system, we tested the ability to grow crystals of the regulator of glucose metabolism and adipogenesis: peroxisome proliferator-activated receptor gamma (apo-hPPAR-γ LBD, as well as several PCG standards. Overall, we sent 25 CrystalCards™ to the ISS, containing ~10,000 individual microgravity PCG experiments in a 3U NanoRacks NanoLab (1U = 10(3 cm.. After 70 days on the ISS, our samples were returned with 16 of 25 (64% microgravity cards having crystals, compared to 12 of 25 (48% of the ground controls. Encouragingly, there were more apo-hPPAR-γ LBD crystals in the microgravity PCG cards than the 1g controls. These positive results hope to introduce the use of the PCG standard of low sample volume and large experimental density to the microgravity environment and provide new opportunities for macromolecular samples that may crystallize poorly in standard laboratories.

  6. Crystal Growth Models of Dexamethasone Sodium Phosphate in a MSMPR Reactive Crystallizer

    Institute of Scientific and Technical Information of China (English)

    郝红勋; 王静康; 王永莉; 侯宝红

    2005-01-01

    The reactive crystallization process of dexamethasone sodium phosphate was investigated in a continuous mixed-suspension, mixed-product-removal(MSMPR) crystallizer. Analyzing experimental data, it was found that the growth of product crystal was size-dependent. The Bransom, CR, ASL, M J2 and M J3 size-dependent growth models were discussed in details. Using experimental steady state population density data of dexamethasone sodium phosphate, parameters of five size-dependent growth models were determined by the method of non-linear least-squares. By comparison of experimental population density and linear growth rate data with those obtained from the five size-dependent growth models, it was found that the MJ3 model predicts the growth more accurately than do the other four models. Based on the theory of population balance, the crystal nucleation and growth rate equations of dexamethasone sodium phosphate were determined by non-linear regression method. The effects of different operation parameters such as supersaturation, magma density and temperature on the quality of product crystal were also discussed, and the optimal operation conditions were derived.

  7. Synthesis, crystal growth and mechanical properties of Bismuth Silicon Oxide (BSO) single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Riscob, B. [CSIR – National Physical Laboratory, Crystal Growth and X-ray Analysis, New Delhi 110 012 (India); Institute for Plasma Research, Bhat, Gandhinagar 382428, Gujarat (India); Shkir, Mohd. [CSIR – National Physical Laboratory, Crystal Growth and X-ray Analysis, New Delhi 110 012 (India); Ganesh, V. [Department of Physics, Kakatiya University, Warangal 506 009 (India); Vijayan, N.; Maurya, K.K. [CSIR – National Physical Laboratory, Crystal Growth and X-ray Analysis, New Delhi 110 012 (India); Kishan Rao, K. [Department of Physics, Kakatiya University, Warangal 506 009 (India); Bhagavannarayana, G., E-mail: bhagavan@mail.nplindia.ernet.in [CSIR – National Physical Laboratory, Crystal Growth and X-ray Analysis, New Delhi 110 012 (India)

    2014-03-05

    Highlights: • Synthesis of Bismuth Silicon Oxide (BSO). • Single crystal growth of BSO by Czochralski (Cz) method. • Complete mechanical analysis by device fabrication point of view. • Theoretical and experimental calculations of mechanical properties. -- Abstract: Bismuth Silicon Oxide (BSO) is an efficient material for piezo-electric and electro-optic applications. In this article, growth of BSO single crystal by high temperature Czochralski melt growth technique and its detailed mechanical characterization by Vickers microhardness, fracture toughness, crack propagation, brittleness index and yield strength have been reported. The raw material was synthesized by solid state reaction using the stoichiometric ratio of high purity bismuth tri-oxide and silicon di-oxide. The synthesized material was charged in the platinum crucible and then melted. The required rotation and pulling rate was optimized for BSO single crystal growth and good quality single crystal has been harvested after a time span of 5 days. Powder X-ray diffraction analysis confirms the parent crystallization phase of BSO. The experimentally studied mechanical behavior of the crystal is explained using various theoretical models. The anisotropic nature of the crystals is studied using Knoop indentation technique.

  8. Growth of aluminum nitride bulk crystals by sublimation

    Science.gov (United States)

    Liu, Bei

    The commercial potential of III-nitride semiconductors is already being realized by the appearance of high efficiency, high reliability, blue and green LEDS around the world. However, the lack of a native nitride substrate has hindered the full-realization of more demanding III-nitride devices. To date, single aluminum nitride (AlN) crystals are not commercially available. New process investigation is required to scale up the crystal size. New crucibles stable up to very high temperatures (˜2500°C) are needed which do not incorporate impurities into the growing crystals. In this thesis, the recent progresses in bulk AlN crystal growth by sublimation-recondensation were reviewed first. The important physical, optical and electrical properties as well as chemical and thermal stabilities of AlN were discussed. The development of different types of growth procedures including self-seeding, substrate employed and a new "sandwich" technique were covered in detail. Next, the surface morphology and composition at the initial stages of AlN grown on 6H-SiC (0001) were investigated. Discontinuous AlN coverage occurred after 15 minutes of growth. The initial discontinuous nucleation of AlN and different lateral growth of nuclei indicated discontinuous AIN direct growth on on-axis 6H-SiC substrates. At the temperature in excess of 2100°C, the durability of the furnace fixture materials (crucibles, retorts, etc.) remains a critical problem. The thermal and chemical properties and performance of several refractory materials, including tantalum carbide, niobium carbide, tungsten, graphite, and hot-pressed boron nitride (HPBN), in inert gas, as well as under AIN crystal growth conditions were discussed. TaC and NbC are the most stable crucible materials in the crystal growth system. HPBN crucible is more suitable for AlN self-seeding growth, as crystals tend to nucleate in thin colorless platelets with low dislocation density. Finally, clear and colorless thin platelet Al

  9. Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment

    Science.gov (United States)

    Su, Ching-Hua

    2014-01-01

    A low gravity material experiment will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). There are two sections of the flight experiment: (I) crystal growth of ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, by physical vapor transport (PVT) and (II) melt growth of CdZnTe by directional solidification. The main objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the grown crystals as results of buoyancy-driven convection and growth interface fluctuations caused by irregular fluid-flows on Earth. The investigation consists of extensive ground-based experimental and theoretical research efforts and concurrent flight experimentation. This talk will focus on the ground-based studies on the PVT crystal growth of ZnSe and related ternary compounds. The objectives of the ground-based studies are (1) obtain the experimental data and conduct the analyses required to define the optimum growth parameters for the flight experiments, (2) perfect various characterization techniques to establish the standard procedure for material characterization, (3) quantitatively establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low-gravity environment and (4) develop theoretical and analytical methods required for such evaluations. ZnSe and related ternary compounds have been grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals have been characterized extensively by various techniques to correlate the grown crystal properties with the growth conditions.

  10. Effect of nucleation layer morphology on crystal quality, surface morphology and electrical properties of AlGaN/GaN heterostructures

    Institute of Scientific and Technical Information of China (English)

    Duan Huantao; Hao Yue; Zhang Jincheng

    2009-01-01

    Nucleation layer formation is a key factor for high quality gallium nitride (GaN) growth on a sapphire substrate. We found that the growth rate substantially affected the nucleation layer morphology, thereby having a great impact on the crystal quality, surface morphology and electrical properties of AIGaN/GaN heterostructures on sapphire substrates. A nucleation layer with a low growth rate of 2.5 nm/min is larger and has better coalescence than one grown at a high growth rate of 5 nm/min. AIGaN/GaN heterostructures on a nucleation layer with low growth rate have better crystal quality, surface morphology and electrical properties.

  11. Crystal growth and physical properties of Ferro-pnictides

    Energy Technology Data Exchange (ETDEWEB)

    Aswartham, Saicharan

    2012-11-08

    The thesis work presented here emphasizes important aspects of crystal growth and the influence of chemical substitution in Fe-As superconductors. High temperature solution growth technique is one of most powerful and widely used technique to grow single crystals of various materials. The biggest advantage of high temperature solution growth technique is the, possibility of growing single crystals from both congruently and incongruently melting materials. Solution growth technique has the potential to control high vapour pressures, given the fact that, in Fe-based superconductors elements with high vapour pressure like As, K, Li and Na have to be handled during the crystal growth procedure. In this scenario high temperature solution growth is the best suitable growth technique to synthesize sizable homogeneous single crystals. Using self-flux high temperature solution growth technique, large centimeter-sized high quality single crystals of BaFe{sub 2}As{sub 2} were grown. This pristine compound BaFe{sub 2}As{sub 2} undergoes structural and magnetic transition at T{sub S/N} = 137 K. By suppressing this magnetic transition and stabilizing tetragonal phase with chemical substitution, like Co-doping and Na-doping, bulk superconductivity is achieved. Superconducting transitions of as high as T{sub c} = 34 K with Na substitution and T{sub c} = 25 K with Co-doping were obtained. A combined electronic phase diagram has been achieved for both electron doping with Co and hole doping with Na in BaFe{sub 2}As{sub 2}. Single crystals of LiFe{sub 1-x}Co{sub x}As with x = 0, 0.025, 0.05 and 0.075 were grown by a self-flux high temperature solution growth technique. The charge doping in LiFeAs is achieved with the Co-doping in Fe atoms. The superconducting properties investigated by means of temperature dependent magnetization and resistivity revealed that superconductivity is shifted to lower temperatures and with higher amount of charge carriers superconductivity is killed

  12. Aluminum nitride bulk crystal growth in a resistively heated reactor

    Science.gov (United States)

    Dalmau, Rafael Federico

    A resistively heated reactor capable of temperatures in excess of 2300°C was used to grow aluminum nitride (AlN) bulk single crystals from an AlN powder source by physical vapor transport (PVT) in nitrogen atmosphere. AlN crystals were grown at elevated temperatures by two different methods. Self-seeded crystals were obtained by spontaneous nucleation on the crucible walls, while seeded growth was performed on singular and vicinal (0001) surfaces of silicon carbide (SiC) seeds. During self-seeded growth experiments a variety of crucible materials, such as boron nitride, tungsten, tantalum, rhenium, tantalum nitride, and tantalum carbide, were evaluated. These studies showed that the morphology of crystals grown by spontaneous nucleation strongly depends on the growth temperature and contamination in the reactor. Crucible selection had a profound effect on contamination in the crystal growth environment, influencing nucleation, coalescence, and crystal morphology. In terms of high-temperature stability and compatibility with the growth process, the best results for AlN crystal growth were obtained in crucibles made of sintered tantalum carbide or tantalum nitride. In addition, contamination from the commercially purchased AlN powder source was reduced by presintering the powder prior to growth, which resulted in a drastic reduction of nearly all impurities. Spontaneously grown single crystals up to 15 mm in size were characterized by x-ray diffraction, x-ray topography, glow discharge mass spectrometry, and secondary ion mass spectrometry. Average dislocation densities were on the order of 103 cm -3, with extended areas virtually free of dislocations. High resolution rocking curves routinely showed peak widths as narrow as 7 arcsec, indicating a high degree of crystalline perfection. Low-temperature partially polarized optical reflectance measurements were used to calculate the crystal-field splitting parameter of AlN, Deltacr = -230 meV, and a low-temperature (1

  13. Crystal growth and magnetic property of YFeO3 crystal

    Indian Academy of Sciences (India)

    Anhua Wu; Hui Shen; Jun Xu; Zhanliang Wang; Linwen Jiang; Liqing Luo; Shujuan Yuan; Shixun Cao; Huaijin Zhang

    2012-04-01

    YFeO3 and other rare earth substituted crystals with distorted orthorhombic pervoskite-like structure (space group, ) have attracted much attention due to their remarkable magnetic properties of primary significance for technological applications. In the present work, the floating zone growth of YFeO3 crystals has been systematically investigated and high quality YFeO3 crystal was obtained by optimized process. The magnetic properties of YFeO3 crystal were investigated, and it indicated the high magneto-optical property in YFeO3 crystals with specific orientation due to its anisotropy. YFeO3 crystals display superior performance in the application magneto-optical current sensors and fast latching optical switches.

  14. Control of nucleation and growth in protein crystal growth

    Science.gov (United States)

    Rosenberger, Franz; Meehan, Edward J.

    1988-01-01

    The potential advantages of nucleation and growth control through temperature, rather than the addition of precipitants or removal of solvent, are discussed. A simple light scattering arrangement for the characterization of nucleation and growth conditions in solutions is described. The temperature dependence of the solubility of low ionic strength lysozyme solutions is applied in preliminary nucleation and growth experiments.

  15. Hydrothermal crystal growth of oxides for optical applications

    Science.gov (United States)

    McMillen, Colin David

    2007-12-01

    The manipulation of light has proven to be an integral part of today's technology-based society. In particular, there is great interest in obtaining coherent radiation in all regions of the optical spectrum to advance technology in military, medical, industrial, scientific and consumer fields. Exploring new crystal growth techniques as well as the growth of new optical materials is critical in the advancement of solid state optics. Surprisingly, the academic world devotes little attention to the growth of large crystals. This shortcoming has left gaps in the optical spectrum inaccessible by solid state devices. This dissertation explores the hydrothermal crystal growth of materials that could fill two such gaps. The first gap exists in the deep-UV region, particularly below 200 nm. Some materials such as LiB3O5 and beta-BaB2O4 can generate coherent light at wavelengths as low as 205 nm. The growth of these materials was explored to investigate the feasibility of the hydrothermal method as a new technique for growing these crystals. Particular attention was paid to the descriptive chemistry surrounding these systems, and several novel structures were elucidated. The study was also extended to the growth of materials that could be used for the generation of coherent light as low as 155 nm. Novel synthetic schemes for Sr2Be2B2O7 and KBe2BO 3F2 were developed and the growth of large crystals was explored. An extensive study of the structures, properties and crystal growth of related compounds, RbBe2BO3F2 and CsBe2BO 3F2, was also undertaken. Optimization of a number of parameters within this family of compounds led to the hydrothermal growth of large, high quality single crystal at rates suitable for large-scale growth. The second gap in technology is in the area of high average power solid state lasers emitting in the 1 mum and eye-safe (>1.5 mum) regions. A hydrothermal technique was developed to grow high quality crystals of Sc 2O3 and Sc2O3 doped with suitable

  16. Pathways to self-organization: crystallization via nucleation and growth

    CERN Document Server

    Jungblut, Swetlana

    2016-01-01

    Crystallization, a prototypical self-organization process during which a disordered state spontaneously transforms into a crystal characterized by a regular arrangement of its building blocks, usually proceeds by nucleation and growth. In the initial stages of the transformation, a localized nucleus of the new phase forms in the old one due to a random fluctuation. Most of these nuclei disappear after a short time, but rarely a crystalline embryo may reach a critical size after which further growth becomes thermodynamically favorable and the entire system is converted into the new phase. In these lecture notes, we will discuss several theoretical concepts and computational methods to study crystallization. More specifically, we will address the rare event problem arising in the simulation of nucleation processes and explain how to calculate nucleation rates accurately. Particular attention is directed towards discussing statistical tools to analyze crystallization trajectories and identify the transition mech...

  17. Growth and Characterization of Agar Gel Grown Brushite Crystals

    Directory of Open Access Journals (Sweden)

    V. B. Suryawanshi

    2014-01-01

    Full Text Available Brushite [CaHPO4·2H2O] or calcium hydrogen phosphate dihydrate (CHPD also known as urinary crystal is a stable form of calcium phosphate. The brushite crystals were grown by single and double diffusion techniques in agar-agar gel at room temperature. Effects of different growth parameters were discussed in single diffusion and double diffusion techniques. Good quality star, needle, platy, rectangular, and prismatic shaped crystals in single diffusion and nuclei with dendritic growth were obtained in double diffusion. These grown nuclei were characterized by scanning electron microscopy (SEM, Fourier transform infrared (FTIR spectroscopy, X-ray diffraction (XRD, and thermogravimetric analysis (TGA. SEM has shown the different morphologies of crystals; FTIR has confirmed the presence of functional groups; crystalline nature was supported by XRD, whereas the TGA indicates total 24.68% loss in weight and formation of stable calcium pyrophosphate (Ca2P2O7 at 500°C.

  18. Growth, crystalline perfection and characterization of benzophenone oxime crystal

    Science.gov (United States)

    Rajasekar, M.; Muthu, K.; Meenatchi, V.; Bhagavannarayana, G.; Mahadevan, C. K.; Meenakshisundaram, SP.

    Single crystals of benzophenone oxime (BPO) have been grown by slow evaporation solution growth technique from ethanol at room temperature. The single crystal X-ray diffraction study reveals that the crystal belongs to monoclinic system and cell parameters are, a = 9.459 Å, b = 8.383 Å, c = 26.690 Å, v = 2115 Å3 and β = 92.807°. The structure and the crystallinity of the materials were further confirmed by powder X-ray diffraction analysis. The various functional groups present in the molecule are confirmed by FT-IR analysis. The TG/DSC studies reveal the purity of the material and the crystals are transparent in the entire visible region having a lower optical cut-off at ˜300 nm. The crystalline perfection was evaluated by high-resolution X-ray diffraction (HRXRD). The crystal is further characterized by Kurtz powder technique, dielectric studies and microhardness analysis.

  19. Controlled Growth of Rubrene Nanowires by Eutectic Melt Crystallization

    Science.gov (United States)

    Chung, Jeyon; Hyon, Jinho; Park, Kyung-Sun; Cho, Boram; Baek, Jangmi; Kim, Jueun; Lee, Sang Uck; Sung, Myung Mo; Kang, Youngjong

    2016-03-01

    Organic semiconductors including rubrene, Alq3, copper phthalocyanine and pentacene are crystallized by the eutectic melt crystallization. Those organic semiconductors form good eutectic systems with the various volatile crystallizable additives such as benzoic acid, salicylic acid, naphthalene and 1,3,5-trichlorobenzene. Due to the formation of the eutectic system, organic semiconductors having originally high melting point (Tm > 300 °C) are melted and crystallized at low temperature (Te = 40.8–133 °C). The volatile crystallizable additives are easily removed by sublimation. For a model system using rubrene, single crystalline rubrene nanowires are prepared by the eutectic melt crystallization and the eutectic-melt-assisted nanoimpinting (EMAN) technique. It is demonstrated that crystal structure and the growth direction of rubrene can be controlled by using different volatile crystallizable additives. The field effect mobility of rubrene nanowires prepared using several different crystallizable additives are measured and compared.

  20. Vapor Growth of Mercuric Iodide Tetragonal Prismatic Crystals

    Science.gov (United States)

    2013-03-01

    These steps were followed by immersion in 1% potassium iodide (KI) solution. The apparatus were then cleaned and rinsed thoroughly with deionized (DI...Pergamon Press, 1973. [34] N. Lyakh, “Composition and kinetic characteristics of vapour phase during mercuric iodide growing,” Crystal Res. Technol...DTRA-TR-13-6 Vapor Growth of Mercuric Iodide Tetragonal Prismatic Crystals Approved for public release, distribution is unlimited. March 2013

  1. Defect reduction in seeded aluminum nitride crystal growth

    Science.gov (United States)

    Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Slack, Glen A.

    2017-06-06

    Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density .ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

  2. Defect reduction in seeded aluminum nitride crystal growth

    Energy Technology Data Exchange (ETDEWEB)

    Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Stack, Glen A.

    2017-04-18

    Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

  3. Growth of lead molybdate crystals by vertical Bridgman method

    Indian Academy of Sciences (India)

    Hongbing Chen; Congxin Ge; Rongsheng Li; Jinhao Wang; Changgen Wu; Xianling Zeng

    2005-10-01

    The growth of PbMoO4 crystals by the modified Bridgman method has been reported in this paper. The feed material with strict stoichiometric composition is desirable for the Bridgman growth of the crystals. The continuous composition change of the melts during growth can be avoided because the volatilization of melts is limited by sealed platinum crucibles. By means of the optimum growth parameters such as the growth rate of < 1.2 mm/h and the temperature gradient of 20 ∼ 40°C/cm across the solid–liquid interface under the furnace temperature of 1140 ∼ 1200°C, large size crystals with high optical uniformity were grown successfully. The distribution of Pb and Mo concentration along the growth axis was measured by X-ray fluorescence analysis. The single crystallinity of the grown sample was evaluated by the double-crystal X-ray rocking curve. The transmission spectra were measured in the range of 300–800 nm at room temperature.

  4. Zeolite crystal growth in space - What has been learned

    Science.gov (United States)

    Sacco, A., Jr.; Thompson, R. W.; Dixon, A. G.

    1993-01-01

    Three zeolite crystal growth experiments developed at WPI have been performed in space in last twelve months. One experiment, GAS-1, illustrated that to grow large, crystallographically uniform crystals in space, the precursor solutions should be mixed in microgravity. Another experiment evaluated the optimum mixing protocol for solutions that chemically interact ('gel') on contact. These results were utilized in setting the protocol for mixing nineteen zeolite solutions that were then processed and yielded zeolites A, X and mordenite. All solutions in which the nucleation event was influenced produced larger, more 'uniform' crystals than did identical solutions processed on earth.

  5. Stability limits for the horizontal ribbon growth of silicon crystals

    Science.gov (United States)

    Daggolu, Parthiv; Yeckel, Andrew; Bleil, Carl E.; Derby, Jeffrey J.

    2013-01-01

    A rigorous, thermal-capillary model, developed to couple heat transfer, melt convection and capillary physics, is employed to assess stability limits of the HRG system for growing silicon ribbons. Extending the prior understanding of this process put forth by Daggolu et al. [Thermal-capillary analysis of the horizontal ribbon growth of silicon crystals, Journal of Crystal Growth 355 (2012) 129-139], model results presented here identify additional failure mechanisms, including the bridging of crystal onto crucible, the spilling of melt from the crucible, and the undercooling of melt at the ribbon tip, that are consistent with prior experimental observations. Changes in pull rate, pull angle, melt height, and other parameters are shown to give rise to limits, indicating that only narrow operating windows exist in multi-dimensional parameter space for stable growth conditions that circumvent these failure mechanisms.

  6. Directed Growth of Orthorhombic Crystals in a Micropillar Array.

    Science.gov (United States)

    Holzner, Gregor; Binder, Claudia; Kriel, Frederik H; Priest, Craig

    2017-02-14

    We report directed growth of orthorhombic crystals of potassium permanganate in spatial confinement of a micropillar array. The solution is introduced by spontaneous wicking to give a well-defined film (thickness 10-15 μm; volume ∼600 nL) and is connected to a reservoir (several microliters) that continuously "feeds" the evaporating film. When the film is supersaturated, crystals nucleate and preferentially grow in specific directions guided by one of several possible linear paths through the pillar lattice. Crystals that do not initially conform are stopped at an obstructing pillar, branch into another permitted direction, or spontaneously rotate to align with a path and continue to grow. Microspectroscopy is able to track the concentration of solute in a small region of interest (70 × 100 μm(2)) near to growing crystals, revealing that the solute concentration initially increases linearly beyond the solubility limit. Crystal growth near the region of interest resulted in a sharp decrease in the local solute concentration (which rapidly returns the concentration to the solubility limit), consistent with estimated diffusion time scales (crystal orientation in nanoliter samples will provide new insight into microscale dynamics of microscale crystallization.

  7. Investigation of sapphire detector designed for single particle detection

    Energy Technology Data Exchange (ETDEWEB)

    Karacheban, Olena; Hempel, Maria [DESY, Zeuthen (Germany); Brandenburg University of Technology, Cottbus (Germany); Afanaciev, Konstantin [NCPHEP, Minsk (Belarus); Henschel, Hans; Lange, Wolfgang; Leonard, Jessica [DESY, Zeuthen (Germany); Levy, Itamar [Tel Aviv University, Tel Aviv (Israel); Lohmann, Wolfgang [Brandenburg University of Technology, Cottbus (Germany); CERN, Geneva (Switzerland); Novgorodova, Olga [Technical University, Dresden (Germany); Schuwalow, Sergej [DESY, Hamburg (Germany)

    2015-07-01

    For beam halo and beam loss monitoring systems at accelerators extremely radiation hard sensors are needed. Single crystal sapphire is a promising material. Industrially grown sapphire wafers are available in large sizes, are low in cost and can be operated at room temperature. Currently sapphire sensors are used for a beam-loss monitor at FLASH,detecting bunches of particles crossing the sensors simultaneously. Here we present a multichannel detector designed for single minimum ionising particle detection using a stack of sapphire plates. The performance of the detector was studied in a 5 GeV electron beam at DESY-II. The detector was operated together with the EUDET beam telescope, which allowed the reconstruction of the position of the hits at the detector. For each sapphire plate the charge collection efficiency was measured as a function of the bias voltage and the signal size as a function of the hit position with respect to the metal electrodes. The data confirms that mainly electrons contribute to the signal. Based on these results the next generation sapphire detector will be designed.

  8. Crystal growth of aragonite in the presence of phosphate

    Science.gov (United States)

    Tadier, Solène; Rokidi, Stamatia; Rey, Christian; Combes, Christèle; Koutsoukos, Petros G.

    2017-01-01

    The crystal growth of aragonite was investigated at pH 7.8, 37 °C and constant solution supersaturation from aragonite-seeded supersaturated solutions. The effect of the presence of orthophosphate ions in the supersaturated solution on the kinetics of crystallization of aragonite was investigated over the range of orthophosphate concentrations of 0.25 μM-1 mM. In the presence of orthophosphate in the range of 0.25 μM-8 μM, the crystal growth rate of aragonite decreased with increasing phosphate concentration. At orthophosphate concentration levels exceeding 2 μM, induction times were measured and were found to increase with orthophosphate concentration. At orthophosphate concentration levels >8 μM, the crystal growth of aragonite was inhibited, suggesting the blockage of the active growth sites by the adsorption of orthophosphate ions. Adsorption was confirmed by the investigation of orthophosphate uptake on aragonite, which was: i) found to depend on the equilibrium concentration of orthophosphate in aqueous solutions saturated with respect to aragonite; ii) not influenced by the ionic strength of the electrolyte up to 0.15 M NaCl, showing that electrostatic interactions between orthophosphate and CaCO3 did not play a significant role in this concentration range. Adsorption data of orthophosphate on the aragonite crystals gave satisfactory fit to the Langmuir adsorption model and was confirmed by XPS analysis.

  9. Buffer layers for high-Tc thin films on sapphire

    Science.gov (United States)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  10. Buffer layers for high-Tc thin films on sapphire

    Science.gov (United States)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  11. Modelling of transport phenomena and defects in crystal growth processes

    Indian Academy of Sciences (India)

    S Pendurti; H Zhang; V Prasad

    2001-02-01

    A brief review of single crystal growth techniques and the associated problems is presented. Emphasis is placed on models for various transport and defect phenomena involoved in the growth process with the ultimate aim of integrating them into a comprehensive numerical model. The sources of dislocation nucleation in the growing crystal are discussed, and the propagation and multiplication of these under the action of thermal stresses is discussed. A brief description of a high-level numerical technique based on multiple adaptive grid generation and finite volume discretization is presented, followed by the result of a representative numerical simulation.

  12. Crystal-growth Underground Breeding Extra-sensitive Detectors

    Science.gov (United States)

    Mei, Dongming

    2012-02-01

    CUBED (Center for Ultra-Low Background Experiments at DUSEL) collaborators from USD, SDSMT, SDSU, Sanford Lab, and Lawrence Berkeley National Laboratory are working on the development of techniques to manufacture crystals with unprecedented purity levels in an underground environment that may be used by experiments proposed for DUSEL. The collaboration continues to make significant progress toward its goal of producing high purity germanium crystals. High quality crystals are being pulled on a weekly basis at the temporary surface growth facility located on the USD campus. The characterization of the grown crystals demonstrates that the impurity levels are nearly in the range of the needed impurity level for detector-grade crystals. Currently, the crystals are being grown in high-purity hydrogen atmosphere. With an increase in purity due to the zone refining, the group expects to grow high-purity crystals by the end of 2011. The one third of the grown crystals will be manufactured to be detectors; the remaining will be fabricated in to wafers that have large applications in electro and optical devices as well as solar panels. This would allow the research to be connected to market and create more than 30 jobs and multi millions revenues in a few years.

  13. The dynamic nature of crystal growth in pores

    Science.gov (United States)

    Godinho, Jose R. A.; Gerke, Kirill M.; Stack, Andrew G.; Lee, Peter D.

    2016-09-01

    The kinetics of crystal growth in porous media controls a variety of natural processes such as ore genesis and crystallization induced fracturing that can trigger earthquakes and weathering, as well as, sequestration of CO2 and toxic metals into geological formations. Progress on understanding those processes has been limited by experimental difficulties of dynamically studying the reactive surface area and permeability during pore occlusion. Here, we show that these variables cause a time-dependency of barite growth rates in microporous silica. The rate is approximately constant and similar to that observed on free surfaces if fast flow velocities predominate and if the time-dependent reactive surface area is accounted for. As the narrower flow paths clog, local flow velocities decrease, which causes the progressive slowing of growth rates. We conclude that mineral growth in a microporous media can be estimated based on free surface studies when a) the growth rate is normalized to the time-dependent surface area of the growing crystals, and b) the local flow velocities are above the limit at which growth is transport-limited. Accounting for the dynamic relation between microstructure, flow velocity and growth rate is shown to be crucial towards understanding and predicting precipitation in porous rocks.

  14. Effect of Co2+ doping on solubility, crystal growth and properties of ADP crystals

    Science.gov (United States)

    Ganesh, V.; Shkir, Mohd.; AlFaify, S.; Yahia, I. S.

    2016-09-01

    Bulk size crystal growth of ADP with different concentrations doping of cobalt (Co2+) has been done by low cost slow evaporation technique at ambient conditions. The solubility measurement was carried out on pure and doped crystals and found that the solubility is decreasing with doping concentrations. The presence of Co2+ ion in crystalline matrix of ADP has been confirmed by structural, vibrational and elemental analyses. Scanning electron microscopic study reveals that the doping has strong effect on the quality of the crystals. The optical absorbance and transmission confirms the enhancement of quality of ADP crystals due to Co2+ doping and so the optical band gap. Further the dislocation, photoluminescence, dielectric and mechanical studies confirms that the properties of grown crystals with Co2+ doping has been enriched and propose it as a better candidate for optoelectronic applications.

  15. Controlling protein crystal growth rate by means of temperature

    Energy Technology Data Exchange (ETDEWEB)

    SantamarIa-Holek, I; Gadomski, A [Institute of Mathematics and Physics, University of Technology and Life Sciences, PL-85796 Bydgoszcz (Poland); RubI, J M, E-mail: isholek.fc@gmail.com, E-mail: agad@utp.edu.pl, E-mail: mrubi@ub.edu [Departament de Fisica Fonamental, University of Barcelona, Av. Diagonal 647, E-08028 Barcelona (Spain)

    2011-06-15

    We have proposed a model to analyze the growth kinetics of lysozyme crystals/aggregates under non-isothermal conditions. The model was formulated through an analysis of the entropy production of the growth process which was obtained by taking into account the explicit dependence of the free energy on the temperature. We found that the growth process is coupled with temperature variations, resulting in a novel Soret-type effect. We identified the surface entropy of the crystal/aggregate as a decisive ingredient controlling the behavior of the average growth rate as a function of temperature. The behavior of the Gibbs free energy as a function of temperature is also analyzed. The agreement between theory and experiments is very good in the range of temperatures considered.

  16. Controlling protein crystal growth rate by means of temperature.

    Science.gov (United States)

    Sanamaría-Holek, I; Gadomski, A; Rubí, J M

    2011-06-15

    We have proposed a model to analyze the growth kinetics of lysozyme crystals/aggregates under non-isothermal conditions. The model was formulated through an analysis of the entropy production of the growth process which was obtained by taking into account the explicit dependence of the free energy on the temperature. We found that the growth process is coupled with temperature variations, resulting in a novel Soret-type effect. We identified the surface entropy of the crystal/aggregate as a decisive ingredient controlling the behavior of the average growth rate as a function of temperature. The behavior of the Gibbs free energy as a function of temperature is also analyzed. The agreement between theory and experiments is very good in the range of temperatures considered.

  17. Accumulated distribution of material gain at dislocation crystal growth

    Science.gov (United States)

    Rakin, V. I.

    2016-05-01

    A model for slowing down the tangential growth rate of an elementary step at dislocation crystal growth is proposed based on the exponential law of impurity particle distribution over adsorption energy. It is established that the statistical distribution of material gain on structurally equivalent faces obeys the Erlang law. The Erlang distribution is proposed to be used to calculate the occurrence rates of morphological combinatorial types of polyhedra, presenting real simple crystallographic forms.

  18. Optical Characteristics of Ti∶Sapphire Grown by Kyropoulos Technique%泡生法生长钛宝石的光学特征

    Institute of Scientific and Technical Information of China (English)

    张宝辉; 徐军; 杨秋红; 王静雅; 唐慧丽

    2013-01-01

    钛宝石单晶是重要的可调谐激光晶体材料,当前的研究重点在于获取大尺寸、高质量钛宝石晶体来满足高能激光发展的需求.采用先进泡生法(KY)生长技术,通过对生长工艺的优化控制,成功生长出了高质量的30 kg级钛宝石晶体,钛的掺杂离子数分数为0.2%.实验测试结果表明,晶体中钛离子浓度分布均匀,光学性能良好,晶体品质因素(FOM)值大于200.实验结果对于实现高质量、大尺寸钛宝石晶体的生长及其激光应用具有十分重要的意义.%Ti∶sapphire single crystals are important tunable laser materials.Recent researches are focusing on how to grow large-size and high-quality Ti∶ sapphire crystals to meet the demand of high-energy laser development.30 kg grade Ti∶sapphire of 0.2% ion concentrations has been successfully grown by the Kyropoulos (KY) technique through the optimization of the growth process.The experimental tests show that the crystal has a homogeneous titanium distribution and good optical performance.Meanwhile,the figure of merit (FOM) value of the crystal is larger than 200.The present paper is of great importance for the growth and laser application of large-size Ti∶ sapphire crystal.

  19. Growth and high pressure studies of zirconium sulphoselenide single crystals

    Indian Academy of Sciences (India)

    K R Patel; R D Vaidya; M S Dave; S G Patel

    2009-11-01

    Transition metal trichalcogenides are well suited for extreme pressure lubrication. These materials being semiconducting and of layered structure may undergo structural and electronic transition under pressure. In this paper authors reported the details about synthesis and characterization of zirconium sulphoselenide single crystals. The chemical vapour transport technique was used for the growth of zirconium sulphoselenide single crystals. The energy dispersive analysis by X-ray (EDAX) gave the confirmation about the stoichiometry of the as-grown crystals and other structural characterizations were accomplished by X-ray diffraction (XRD) study. The variation of electrical resistance was monitored in a Bridgman opposed anvil set-up up to 8 GPa pressure to identify the occurrence of any structural transition. These crystals do not possess any structural transitions upto the pressure limit examined.

  20. Crystal nucleation and near-epitaxial growth in nacre

    CERN Document Server

    Olson, Ian C; Tamura, Nobumichi; Kunz, Martin; Gilbert, Pupa U P A

    2013-01-01

    Nacre, the iridescent inner lining of many mollusk shells, interests materials scientists because of its unique brick-and-mortar periodic structure at the sub-micron scale and its remarkable resistance to fracture. However, it remains unclear how nacre forms. Here we present 20-nm, 2{\\deg}-resolution Polarization-dependent Imaging Contrast (PIC) images of shells from 15 species, mapping nacre tablets and their orientation patterns, showing where crystals nucleate and how they grow in nacre. In all shells we found stacks of co-oriented aragonite (CaCO3) tablets arranged into vertical columns or staggered diagonally. Only near the nacre-prismatic boundary are disordered crystals nucleated, as spherulitic aragonite. Overgrowing nacre tablet crystals are most frequently co-oriented with the underlying spherulitic aragonite or with another tablet, connected by mineral bridges. Therefore aragonite crystal growth in nacre is epitaxial or near-epitaxial, with abrupt or gradual changes in orientation, with c-axes with...

  1. Second harmonic generation and crystal growth of new chalcone derivatives

    Science.gov (United States)

    Patil, P. S.; Dharmaprakash, S. M.; Ramakrishna, K.; Fun, Hoong-Kun; Sai Santosh Kumar, R.; Narayana Rao, D.

    2007-05-01

    We report on the synthesis, crystal structure and optical characterization of chalcone derivatives developed for second-order nonlinear optics. The investigation of a series of five chalcone derivatives with the second harmonic generation powder test according to Kurtz and Perry revealed that these chalcones show efficient second-order nonlinear activity. Among them, high-quality single crystals of 3-Br-4'-methoxychalcone (3BMC) were grown by solvent evaporation solution growth technique. Grown crystals were characterized by X-ray powder diffraction (XRD), laser damage threshold, UV-vis-NIR and refractive index measurement studies. Infrared spectroscopy, thermogravimetric analysis and differential thermal analysis measurements were performed to study the molecular vibration and thermal behavior of 3BMC crystal. Thermal analysis does not show any structural phase transition.

  2. Maintenance of supersaturation II: indomethacin crystal growth kinetics versus degree of supersaturation.

    Science.gov (United States)

    Patel, Dhaval D; Anderson, Bradley D

    2013-05-01

    This study compares the kinetics of crystal growth of indomethacin from supersaturated suspensions at varying degrees of supersaturation (2 ≤ S ≥ 9) in the presence of seed crystals of the γ-form of indomethacin, the lowest energy polymorph. At high S (6 ≤ S ≥ 9), the crystal growth was first order with rate coefficients (kG ) that were nearly constant and consistent with the value predicted for bulk-diffusion control. At lower S (supersaturation suggesting that a higher energy surface layer was deposited on the γ-form seed crystals during crystal growth. When growth experiments were repeated at low S in the presence of indomethacin seed crystals isolated from a previous crystal growth experiment (i.e., seed crystals having higher energy surface), kG matched the higher values observed for bulk diffusion-controlled crystal growth. Crystal growth experiments were also conducted at S supersaturation during oral absorption. Copyright © 2013 Wiley Periodicals, Inc.

  3. Transient natural convection heat and mass transfer in crystal growth

    Science.gov (United States)

    Han, Samuel S.

    1990-01-01

    A numerical analysis of transient combined heat and mass transfer across a rectangular cavity is performed. The physical parameters are selected to represent a range of possible crystal growth in solutions. Good agreements with measurement data are observed. It is found that the thermal and solute fields become highly oscillatory when the thermal and solute Grashof numbers are large.

  4. Solidification and crystal growth of solid solution semiconducting alloys

    Energy Technology Data Exchange (ETDEWEB)

    Lehoczky, S.L.; Szofran, F.R.

    1984-10-01

    Problems associated with the solidification and crytal growth of solid-solution semiconducting alloy crystals in a terrestrial environment are described. A detailed description is given of the results for the growth of mercury cadmium telluride (HgCdTe) alloy crystals by directional solidification, because of their considerable technological importance. A series of HgCdTe alloy crystals are grown from pseudobinary melts by a vertical Bridgman method using a wide range of growth rates and thermal conditions. Precision measurements are performed to establish compositional profiles for the crystals. The compositional variations are related to compositional variations in the melts that can result from two-dimensional diffusion or density gradient driven flow effects ahead of the growth interface. These effects are discussed in terms of the alloy phase equilibrium properties, the recent high temperature thermophysical data for the alloys and the highly unusual heat transfer characteristics of the alloy/ampule/furnace system that may readily lead to double diffusive convective flows in a gravitational environment.

  5. Phase field simulations of ice crystal growth in sugar solutions

    NARCIS (Netherlands)

    Sman, Van Der R.G.M.

    2016-01-01

    We present the first model ever, that describes explicitly ice crystal growth in a sugar solution during freezing. This 2-D model uses the phase field method, supplemented with realistic, and predictive theories on the thermodynamics and (diffusion) kinetics of this food system. We have to make u

  6. Solidification and crystal growth of solid solution semiconducting alloys

    Science.gov (United States)

    Lehoczky, S. L.; Szofran, F. R.

    1984-01-01

    Problems associated with the solidification and crytal growth of solid-solution semiconducting alloy crystals in a terrestrial environment are described. A detailed description is given of the results for the growth of mercury cadmium telluride (HgCdTe) alloy crystals by directional solidification, because of their considerable technological importance. A series of HgCdTe alloy crystals are grown from pseudobinary melts by a vertical Bridgman method using a wide range of growth rates and thermal conditions. Precision measurements are performed to establish compositional profiles for the crystals. The compositional variations are related to compositional variations in the melts that can result from two-dimensional diffusion or density gradient driven flow effects ahead of the growth interface. These effects are discussed in terms of the alloy phase equilibrium properties, the recent high temperature thermophysical data for the alloys and the highly unusual heat transfer characteristics of the alloy/ampule/furnace system that may readily lead to double diffusive convective flows in a gravitational environment.

  7. Determining residual impurities in sapphire by means of electron paramagnetic resonance and nuclear activation analysis

    Science.gov (United States)

    Bletskan, D. I.; Bratus', V. Ya.; Luk'yanchuk, A. R.; Maslyuk, V. T.; Parlag, O. A.

    2008-07-01

    Sapphire (α-Al2O3) single crystals grown using the Verneuil and Kyropoulos methods have been analyzed using electron paramagnetic resonance and γ-ray spectroscopy with 12-MeV bremsstrahlung excitation. It is established that uncontrolled impurities in the final sapphire single crystals grown by the Kyropoulos method in molybdenum-tungsten crucibles are supplied both from the initial materials and from the furnace and crucible materials

  8. Crystal Growth of Solid Solution HgCdTe Alloys

    Science.gov (United States)

    Lehoczky, Sandor L.

    1997-01-01

    The growth of homogenous crystals of HgCdTe alloys is complicated by the large separation between their liquidus and solidus temperatures. Hg(1-x)Cd(x)Te is representative of several alloys which have electrical and optical properties that can be compositionally tuned for a number of applications. Limitations imposed by gravity during growth and results from growth under reduced conditions are described. The importance of residual accelerations was demonstrated by dramatic differences in compositional distribution observed for different attitudes of the space shuttle that resulted in different steady acceleration components.

  9. Growth of lead-tin telluride crystals under high gravity

    Science.gov (United States)

    Regel, L. L.; Turchaninov, A. M.; Shumaev, O. V.; Bandeira, I. N.; An, C. Y.; Rappl, P. H. O.

    1992-04-01

    The influence of high gravity environment on several growth habits of lead-tin telluride crystals began to be investigated. Preliminary experiments with Pb 0.8Sn 0.2te grown by the Bridgman technique had been made at the centrifuge facilities of the Y.A. Gagarin Cosmonauts Center in the USSR, using accelerations of 5 g, 5.2 g and 8 g. The Sn distribution for these crystals was compared with that obtained for growth at normal gravity and the results show the existence of significant compositional inhomogeneities along the axial direction. Convection currents at high gravity seem to help multiple nucleation and subsequent random orientation of growth. Analyses of carrier concentrations as well as morphological characteristics were also made.

  10. Using Microfluidics to Decouple Nucleation and Growth of Protein Crystals.

    Science.gov (United States)

    Shim, Jung-Uk; Cristobal, Galder; Link, Darren R; Thorsen, Todd; Fraden, Seth

    2007-01-01

    A high throughput, low volume microfluidic device has been designed to decouple the physical processes of protein crystal nucleation and growth. This device, called the Phase Chip, is constructed out of poly(dimethylsiloxane) (PDMS) elastomer. One of the Phase Chip's innovations is to exploit surface tension forces to guide each drop to a storage chamber. We demonstrate that nanoliter water-in-oil drops of protein solutions can be rapidly stored in individual wells thereby allowing the screening of 1000 conditions while consuming a total of only 10 mug protein on a 20 cm(2) chip. Another significant advance over current microfluidic devices is that each well is in contact with a reservoir via a dialysis membrane through which only water and other low molecular weight organic solvents can pass, but not salt, polymer, or protein. This enables the concentration of all solutes in a solution to be reversibly, rapidly, and precisely varied in contrast to current methods, such as the free interface diffusion or sitting drop methods, which are irreversible. The Phase Chip operates by first optimizing conditions for nucleation by using dialysis to supersaturate the protein solution, which leads to nucleation of many small crystals. Next, conditions are optimized for crystal growth by using dialysis to reduce the protein and precipitant concentrations, which leads small crystals to dissolve while simultaneously causing only the largest ones to grow, ultimately resulting in the transformation of many small, unusable crystals into a few large ones.

  11. Microstructure and crystal growth direction of Al-Mg alloy

    Directory of Open Access Journals (Sweden)

    Ti-jun Chen

    2015-03-01

    Full Text Available The microstructures and crystal growth directions of permanent mould casting and directionally solidified Al-Mg alloys with different Mg contents have been investigated. The results indicate that the effect of Mg content on microstructure is basically same for the alloys prepared by these two methods. The primary grains change from cellular crystals to developed columnar dendrites, and then to equiaxed dendrites as the Mg content is increased. Simultaneously, both the cellular or columnar grain region and the primary trunk spacing decrease. All of these changes are mainly attributed to the constitutional supercooling resulting from Mg element. Comparatively, the cellular or columnar crystals of the directionally solidified alloys are straighter and more parallel than those of the permanent mould casting alloys. These have straight or wavy grain boundaries, one of the most important microstructure characteristics of feathery grains. However, the transverse microstructure and growth direction reveal that they do not belong to feathery grains. The Mg seemingly can affect the crystal growth direction, but does not result in the formation of feathery grains under the conditions employed in the study.

  12. Vapor Growth of Alloy-Type Semiconductor Crystals

    Science.gov (United States)

    Wiedemeier, H.

    1985-01-01

    The present effort is part of a continuing research program directed towards the investigation of basic vapor transport phenomena and of crystal growth properties of electronic materials. The primary purpose of ground-based studies is the development and definition of optimum experimental parameters for flight experiments. The ground-based effort includes the investigation of gravity-driven convection effects on mass transport rates and on crystal morphology for different orientations of the density gradient with respect to the gravity vector, and as a function of pressure and of temperature. In addition to the experimental tasks, theoretical efforts involve the quantitative thermodynamic analysis of the systems under investigation, the computation of fluid dynamic parameters, and the consideration of other possible effects on fluid flow under vertical, stabilizing and microgravity conditions. The specific experiments to be performed in a microgravity environment include the investigation of vapor transport and crystal growth phenomena of the GeSe-Xenon system and of the mass flux and growth of bulk and layer-type crystals of Hg sub (1-x) Cd sub x Te using HgI as a transport agent.

  13. Twin-mediated crystal growth: an enigma resolved

    Science.gov (United States)

    Shahani, Ashwin J.; Gulsoy, E. Begum; Poulsen, Stefan O.; Xiao, Xianghui; Voorhees, Peter W.

    2016-06-01

    During crystal growth, faceted interfaces may be perturbed by defects, leading to a rich variety of polycrystalline growth forms. One such defect is the coherent Σ3 {111} twin boundary, which is widely known to catalyze crystal growth. These defects have a profound effect on the properties of many materials: for example, electron-hole recombination rates strongly depend on the character of the twin boundaries in polycrystalline Si photovoltaic cells. However, the morphology of the twinned interface during growth has long been a mystery due to the lack of four-dimensional (i.e., space and time resolved) experiments. Many controversial mechanisms have been proposed for this process, most of which lack experimental verification. Here, we probe the real-time interfacial dynamics of polycrystalline Si particles growing from an Al-Si-Cu liquid via synchrotron-based X-ray tomography. Our novel analysis of the time evolution of the interfacial normals allows us to quantify unambiguously the habit plane and grain boundary orientations during growth. This, when combined with direct measurements of the interfacial morphology provide the first confirmation of twin-mediated growth, proposed over 50 years ago. Using the insights provided by these experiments, we have developed a unified picture of the phenomena responsible for the dynamics of faceted Si growth.

  14. Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    Liu Bo; Zhang Sen; Yin Jia-Yun; Zhang Xiong-Wen; Dun Shao-Bo; Feng Zhi-Hong; Cai Shu-Jun

    2013-01-01

    The effect of an initially grown high-temperature AlN buffer (HT-AlN) layer's thickness on the quality of an AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition (MOCVD) in a two-step growth process is investigated.The characteristics of AIN epilayers are analyzed by using triple-axis crystal X-ray diffraction (XRD) and atomic force microscopy (AFM).It is shown that the crystal quality of the AlN epilayer is closely related to its correlation length.The correlation length is determined by the thickness of the initially grown HT-AIN buffer layer.We find that the optimal HT-AlN buffer thickness for obtaining a high-quality AlN epilayer grown on sapphire substrate is about 20 nm.

  15. World's largest sapphire for many applications

    Science.gov (United States)

    Khattak, Chandra P.; Shetty, Raj; Schwerdtfeger, C. Richard; Ullal, Saurabh

    2016-10-01

    Sapphire has been used for many high technology applications because of its excellent optical, mechanical, high temperature, abrasion resistance and dielectric properties. However, it is expensive and the volume of sapphire used has been limited. The potential sapphire requirements for LED and consumer electronic applications are very high. Emphasis has been on producing larger sapphire boules to achieve significant cost reductions so these applications are realized. World's largest sapphire boules, 500 mm diameter 300+kg, have been grown to address these markets.

  16. Study of Growth Mechanism of Lysozyme Crystal by Batch Crystallization Method

    Institute of Scientific and Technical Information of China (English)

    Hai Liang CUI; Yong YU; Wan Chun CHEN; Qi KANG

    2006-01-01

    The lysozyme crystals were made by batch crystallization method and the distribution of aggregate in solution were measured by dynamic light scattering. The results showed that the dimension of aggregate increased with the increase of the concentration of lysozyme and NaC1,lysozyme molecules aggregated gradually in solution and finally arrived at balance each other.The higher the concentrations of lysozyme and NaC1 were, the faster the growth rate of (110) face was. The growth rates of lysozyme crystal were obtained by a Zeiss microscope, and the effective surface energy (α) of growing steps were calculated about 4.01×l0-8 J.cm-2 according to the model of multiple two-dimensional nucleation mechanism.

  17. Crystal Splitting in the Growth of Bi2S3

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Jing; Alivisatos, A. Paul

    2006-06-15

    Novel Bi{sub 2}S{sub 3} nanostructures with a sheaf-like morphology are obtained via reaction of bismuth acetate-oleic acid complex with elemental sulfur in 1-octadecence. We propose these structures form by the splitting crystal growth mechanism, which is known to account for the morphology some mineral crystals assume in nature. By controlling the synthetic parameters, different forms of splitting, analogous to observed in minerals, are obtained in our case of Bi{sub 2}S{sub 3}. These new and complex Bi{sub 2}S{sub 3} nanostructures are characterized by TEM, SEM, XRD and ED.

  18. III-V semiconductor solid solution single crystal growth

    Science.gov (United States)

    Gertner, E. R.

    1982-01-01

    The feasibility and desirability of space growth of bulk IR semiconductor crystals for use as substrates for epitaxial IR detector material were researched. A III-V ternary compound (GaInSb) and a II-VI binary compound were considered. Vapor epitaxy and quaternary epitaxy techniques were found to be sufficient to permit the use of ground based binary III-V crystals for all major device applications. Float zoning of CdTe was found to be a potentially successful approach to obtaining high quality substrate material, but further experiments were required.

  19. Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography.

    Science.gov (United States)

    Xiong, Zhuo; Wei, Tongbo; Zhang, Yonghui; Zhang, Xiang; Yang, Chao; Liu, Zhiqiang; Yuan, Guodong; Li, Jinmin; Wang, Junxi

    2017-03-17

    Gallium nitride-based nanopyramid light-emitting diodes are a promising technology to achieve highly efficient solid-state lighting and beyond. Here, periodic nanopyramid light-emitting diode arrays on gallium nitride/sapphire templates were fabricated by selective-area metalorganic chemical vapor deposition and multiple-exposure colloidal lithography. The electric field intensity distribution of incident light going through polystyrene microspheres and photoresist are simulated using finite-different time-domain method. Nitrogen as the carrier gas and a low V/III ratio (ratio of molar flow rate of group-V to group-III sources) are found to be important in order to form gallium nitride nanopyramid. In addition, a broad yellow emission in photoluminescence and cathodoluminescence spectra were observed. This phenomena showed the potential of nanopyramid light-emitting diodes to realize long wavelength visible emissions.

  20. Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography

    Science.gov (United States)

    Xiong, Zhuo; Wei, Tongbo; Zhang, Yonghui; Zhang, Xiang; Yang, Chao; Liu, Zhiqiang; Yuan, Guodong; Li, Jinmin; Wang, Junxi

    2017-03-01

    Gallium nitride-based nanopyramid light-emitting diodes are a promising technology to achieve highly efficient solid-state lighting and beyond. Here, periodic nanopyramid light-emitting diode arrays on gallium nitride/sapphire templates were fabricated by selective-area metalorganic chemical vapor deposition and multiple-exposure colloidal lithography. The electric field intensity distribution of incident light going through polystyrene microspheres and photoresist are simulated using finite-different time-domain method. Nitrogen as the carrier gas and a low V/III ratio (ratio of molar flow rate of group-V to group-III sources) are found to be important in order to form gallium nitride nanopyramid. In addition, a broad yellow emission in photoluminescence and cathodoluminescence spectra were observed. This phenomena showed the potential of nanopyramid light-emitting diodes to realize long wavelength visible emissions.

  1. Effects of Nano- and Microscale SiO2 Masks on the Growth of a-Plane GaN Layers on r-Plane Sapphire

    Science.gov (United States)

    Son, Ji-Su; Miao, Cao; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Seo, Yong Gon; Hwang, Sung-Min; Baik, Kwang Hyeon

    2013-08-01

    We report on the combined effects of a-plane GaN layers on a nanoscale patterned insulator on an r-plane sapphire substrate and epitaxial lateral overgrowth (ELOG) techniques. The fully coalescent a-plane GaN layer using nano- and microscale SiO2 masks showed the formation of nano- and microscale voids on the masks, respectively. Atomic force microscopy (AFM) measurements revealed a surface roughness of 0.63 nm and a submicron pit density of ˜7.8 ×107 cm-2. Photoluminescence (PL) intensity was enhanced by a factor of 9.0 in comparison with that of a planar sample. Omega full-width at half-maximum (FWHM) values of the (11bar 20) X-ray rocking curve along the c- and m-axes were 553 and 788 arcsec, respectively. A plan-view cathodoluminescence (CL) mapping image showed high luminescence intensity on the SiO2 masks.

  2. Effect of growth temperature of AlN interlayers on the properties of GaN epilayers grown on c-plane sapphire by metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xue, J.S.; Hao, Y.; Yang, L.A. [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, 710071 Xi' an (China); Zhang, J.C. [School of Microelectronics, Xidian University, 710071 Xi' an (China)

    2010-10-15

    The effect of growth temperature of AlN interlayers on the properties of GaN epilayers grown on c-plane sapphire by metal organic chemical vapor deposition has been investigated by high resolution X-ray diffraction (HRXRD) and Raman spectroscopy. It is concluded that the crystalline quality of GaN epilayers is improved significantly by using the high temperature AlN (HT-AlN) interlayer in GaN buffers. The density of threading dislocation is reduced especially for edge type dislocations. Higher compressive stress exists in GaN epilayers with HT-AlN interlayer than with low temperature AlN (LT-AlN) interlayer, which is related to the reduction of strain relaxation caused by the formation of misfit dislocation. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Control of crystal growth in water purification by directional freeze crystallization

    Science.gov (United States)

    Conlon, William M. (Inventor)

    1996-01-01

    A Directional Freeze Crystallization system employs an indirect contact heat exchanger to freeze a fraction of liquid to be purified. The unfrozen fraction is drained away and the purified frozen fraction is melted. The heat exchanger must be designed in accordance with a Growth Habit Index to achieve efficient separation of contaminants. If gases are dissolved in the liquid, the system must be pressurized.

  4. Dependence of calcite growth rate and Sr partitioning on solution stoichiometry: Non-Kossel crystal growth

    NARCIS (Netherlands)

    Nehrke, G.; Reichart, G.-J.; Van Cappellen, P.; Meile, C.; Bijma, J.

    2007-01-01

    Seeded calcite growth experiments were conducted at fixed pH (10.2) and two degrees of supersaturation (Ω = 5, 16), while varying the Ca2+ to CO3 2- solution ratio over several orders of magnitude. The calcite growth rate and the incorporation of Sr in the growing crystals strongly depended on

  5. In situ atomic force microscopy of layer-by-layer crystal growth and key growth concepts

    Science.gov (United States)

    Rashkovich, L. N.; de Yoreo, J. J.; Orme, C. A.; Chernov, A. A.

    2006-12-01

    Contradictions that have been found recently between the representations of classical theory and experiments on crystal growth from solutions are considered. Experimental data show that the density of kinks is low in many cases as a result of the low rate of their fluctuation generation, the Gibbs-Thomson law is not always applicable in these cases, and there is inconsistency with the Cabrera-Vermilyea model. The theory of growth of non-Kossel crystals, which is to be developed, is illustrated by the analysis of the experimental dependence of the growth rate on the solution stoichiometry.

  6. Inversion domains in AlN grown on (0001) sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Jasinski, J.; Liliental-Weber, Z.; Paduano, Q.S.; Weyburne, D.W.

    2003-08-25

    Al-polarity inversion domains formed during AlN layer growth on (0001) sapphire were identified using transmission electron microscopy (TEM). They resemble columnar inversion domains reported for GaN films grown on (0001) sapphire. However, for AlN, these columns have a V-like shape with boundaries that deviate by 2 {+-} 0.5{sup o} from the c-axis. TEM identification of these defects agrees with the post-growth surface morphology as well as with the microstructure revealed by etching in hot aqueous KOH.

  7. Crystal growth in a three-phase system: diffusion and liquid-liquid phase separation in lysozyme crystal growth.

    Science.gov (United States)

    Heijna, M C R; van Enckevort, W J P; Vlieg, E

    2007-07-01

    In the phase diagram of the protein hen egg-white lysozyme, a region is present in which the lysozyme solution demixes and forms two liquid phases. In situ observations by optical microscopy show that the dense liquid droplets dissolve when crystals grow in this system. During this process the demixed liquid region retracts from the crystal surface. The spatial distribution of the dense phase droplets present special boundary conditions for Fick's second law for diffusion. In combination with the cylindrical symmetry provided by the kinetically roughened crystals, this system allows for a full numerical analysis. Using experimental data for setting the boundary conditions, a quasi-steady-state solution for the time-dependent concentration profile was shown to be valid. Comparison of kinetically rough growth in a phase separated system and in a nonseparated system shows that the growth kinetics for a three-phase system differs from a two-phase system, in that crystals grow more slowly but the duration of growth is prolonged.

  8. Nanoparticle-mediated nonclassical crystal growth of sodium fluorosilicate nanowires and nanoplates

    Directory of Open Access Journals (Sweden)

    Hongxia Li

    2011-12-01

    Full Text Available We observed nonclassical crystal growth of the sodium fluorosilicate nanowires, nanoplates, and hierarchical structures through self-assembly and aggregation of primary intermediate nanoparticles. Unlike traditional ion-by-ion crystallization, the primary nanoparticles formed first and their subsequent self-assembly, fusion, and crystallization generated various final crystals. These findings offer direct evidences for the aggregation-based crystallization mechanism.

  9. Microgravity protein crystal growth; results and hardware development

    Science.gov (United States)

    DeLucas, Lawrence J.; Smith, Graig D.; Carter, Daniel C.; Snyder, Robert S.; McPherson, A.; Koszelak, S.; Bugg, Charles E.

    1991-02-01

    Protein crystal growth experiments have been performed on a series of US shuttle missions. Crystallographic studies of proteins and nucleic acids have played key roles in establishing the structural foundations of molecular biology and biochemistry and for revealing structure/function relationships that are of major importance in understanding how macromolecules operate in biological systems. A number of major advances in the technology involved in determining protein structures have shortened the time span involved in structure determination. The major bottleneck in the widespread application of protein crystallography is the ability to produce high quality crystals that are suitable for a complete structural analysis. Evidence from several investigations indicates that crystals of superior quality can be obtained in a microgravity environment. This paper summarizes results obtained from a series of US shuttle missions and describes new hardware currently being developed for future shuttle missions.

  10. Physical modelling of Czochralski crystal growth in horizontal magnetic field

    Science.gov (United States)

    Grants, Ilmārs; Pal, Josef; Gerbeth, Gunter

    2017-07-01

    This study addresses experimentally the heat transfer, the temperature azimuthal non-uniformity and the onset of oscillations in a low temperature physical model of a medium-sized Czochralski crystal growth process with a strong horizontal magnetic field (HMF). It is observed that under certain conditions the integral heat flux may decrease with increasing magnetic field strength at the same time as the flow velocity increases. The azimuthal non-uniformity of the temperature field in the melt near the crystal model rim is only little influenced by its rotation rate outside of a narrow range where the centrifugal force balances the buoyant one. The flow oscillation onset has been observed for two values of the HMF strength. Conditions of this onset are little influenced by the crystal rotation. The critical temperature difference of the oscillation onset considerably exceeds that of the Rayleigh-Bénard (RB) cell in a strong HMF.

  11. The nacre protein perlucin nucleates growth of calcium carbonate crystals.

    Science.gov (United States)

    Blank, S; Arnoldi, M; Khoshnavaz, S; Treccani, L; Kuntz, M; Mann, K; Grathwohl, G; Fritz, M

    2003-12-01

    Atomic force microscopy (AFM) in aqueous solution was used to investigate native nacre of the marine snail Haliotis laevigata on the microscopic scale and the interaction of purified nacre proteins with calcium carbonate crystals on the nanoscopic scale. These investigations were controlled by scanning electron microscopy (SEM), light microscopy (LM) and biochemical methods. For investigations with AFM and SEM, nacre was cleaved parallel to the aragonite tablets in this biogenic polymer/mineral composite. Multilamellar organic sheets consisting of a core of chitin with layers of proteins attached on both sides lay between the aragonite layers consisting of confluent aragonite tablets. Cleavage appeared to occur between the aragonite tablet layer and the protein layer. AFM images revealed a honeycomb-like structure to the organic material with a diameter of the 'honeycombs' equalling that of the aragonite tablets. The walls of the structures consisted of filaments, which were suggested to be collagen. The flat regions of the honeycomb-like structures exhibited a hole with a diameter of more than 100 nm. When incubated in saturated calcium carbonate solution, aragonite needles with perfect vertical orientation grew on the proteinacous surface. After treatment with proteinase K, no growth of orientated aragonite needles was detected. Direct AFM measurements on dissolving and growing calcite crystals revealed a surface structure with straight steps the number of which decreased with crystal growth. When the purified nacre protein perlucin was added to the growth solution (a super-saturated calcium carbonate solution) new layers were nucleated and the number of steps increased. Anion exchange chromatography of the water-soluble proteins revealed a mixture of about 10 different proteins. When this mixture was dialysed against saturated calcium carbonate solution and sodium chloride, calcium carbonate crystals precipitated together with perlucin leaving the other proteins

  12. Analysis of the carbon source for diamond crystal growth

    Institute of Scientific and Technical Information of China (English)

    LI Li; XU Bin; LI MuSen

    2008-01-01

    The lattice constants of diamond and graphite at high pressure and high temperature (HPHT) were calculated on the basis of linear expansion coefficient and elastic constant. According to the empirical electron theory of solids and molecules (EET), the valence electron structures (VESs) of diamond, graphite crystal and their common planes were calculated. The relationship between diamond and graphite structure was analyzed based on the boundary condition of the improved Thomas-Fermi-Dirac theory by Cheng (TFDC). It was found that the electron densities of common planes in graphite were not continuous with those of planes in diamond at the first order of approximation. The results show that during the course of diamond single crystal growth at HPHT with metal catalyst, the carbon sources forming diamond structure do not come from the graphite structure directly. The diamond growth mechanism was discussed from the viewpoint of valence electron structure.

  13. Growth morphology of zinc tris(thiourea) sulphate crystals

    Indian Academy of Sciences (India)

    Sunil Verma; M K Singh; V K Wadhawan; C H Suresh

    2000-06-01

    The growth morphology of crystals of zinc tris(thiourea) sulphate (ZTS) is investigated experimentally, and computed using the Hartman–Perdok approach. Attachment energies of the observed habit faces are calculated for determining their relative morphological importance. A computer code is developed for carrying out these calculations. A special procedure is adopted for computing the cohesive energy of a slice of the structure parallel to any rational crystallographic plane. For estimating the cohesive energies, formal charges on the experimentally determined atomic positions in the molecules of ZTS are calculated by ab initio molecular-orbital computations, with wave functions obtained by the Hartree–Fock procedure. Fairly good agreement with the observed crystal morphology is obtained for a model of growth mechanism in which ZTS is assumed to exist in solution as zinc tris(thiourea) ions and sulphate ions.

  14. A new approach to the CZ crystal growth weighing control

    Science.gov (United States)

    Kasimkin, P. V.; Moskovskih, V. A.; Vasiliev, Y. V.; Shlegel, V. N.; Yuferev, V. S.; Vasiliev, M. G.; Zhdankov, V. N.

    2014-03-01

    The aim of a new approach was to improve the robustness of the weighing control of CZ growth especially for semiconductors, for which the “anomalous“ behavior of the apparent weight provokes instability of the servo-loop. In the described method, the periodic reciprocating measuring motion of small amplitude is superposed on the uniform pull-rod movement. The cross-sectional area is determined from the weight sensor responses that are modulated mainly by the forces of hydrostatic pressure. By the example of germanium crystal growth, it is shown that in the control system, based on such a way of the diameter measuring, a simple PI control law provides a good close loop system's stability and dynamics for the materials with the “anomalous” behavior of a weighing signal. The effect of a meniscus on the modulation measuring of a crystal diameter is also discussed.

  15. Mathematical modeling and numerical simulation of Czochralski Crystal Growth

    Energy Technology Data Exchange (ETDEWEB)

    Jaervinen, J.; Nieminen, R. [Center for Scientific Computing, Espoo (Finland)

    1996-12-31

    A detailed mathematical model and numerical simulation tools based on the SUPG Finite Element Method for the Czochralski crystal growth has been developed. In this presentation the mathematical modeling and numerical simulation of the melt flow and the temperature distribution in a rotationally symmetric crystal growth environment is investigated. The temperature distribution and the position of the free boundary between the solid and liquid phases are solved by using the Enthalpy method. Heat inside of the Czochralski furnace is transferred by radiation, conduction and convection. The melt flow is governed by the incompressible Navier-Stokes equations coupled with the enthalpy equation. The melt flow is numerically demonstrated and the temperature distribution in the whole Czochralski furnace. (author)

  16. Solar furnace satellite for large diameter crystal growth in space

    Science.gov (United States)

    Overfelt, Tony; Wells, Mark; Blake, John

    1993-02-01

    Investigators worldwide are preparing experiments to test the influence of low gravity found in space on the growth of many crystalline materials. However, power limitations prevent existing space crystal growth furnaces from being able to process samples any larger than about 2 cm, and in addition, the background microgravity levels found on the Space Shuttle are not low enough to significantly benefit samples much larger than 2 cm. This paper describes a novel concept of a free-flying platform utilizing well-established solar furnace technology to enable materials processing in space experiments on large-diameter crystals. The conceptual design of this Solar Furnace Satellite is described along with its operational scenario and the anticipated g levels.

  17. Growth morphologies and optical properties of LTA single crystal.

    Science.gov (United States)

    Liu, Xiaojing; Ren, Miaojuan; Chen, Gang; Wang, Peiji

    2013-12-01

    Atomic force microscopy (AFM) has been used to study the growth morphologies of l-threonine acetate (abbreviated as LTA) crystal. Spiral growth hillocks and typical step patterns are described and discussed. Nuclei with various shapes often distribute at the larger step terraces. Eventually, in order to investigate microscopic second order nonlinear optical properties of LTA crystals, the molecular dipole moment (μ), polarizability (α), and first hyperpolarizability (β) were computed using a series of basis sets including polarized and diffuse functions at the framework of Hartree-Fock and density functional theory methods. The study is helpful to the further development of l-threonine analogs with improved nonlinear optical properties. Copyright © 2013 Elsevier B.V. All rights reserved.

  18. Synthesis, crystal structure, crystal growth and physical properties of N,N-diethyl anilinium picrate

    Science.gov (United States)

    Subramaniyan @ Raja, R.; Anandha Babu, G.; Ramasamy, P.

    2011-11-01

    Crystalline substance of N,N-diethyl anilinium picrate (NNDEAP) has been synthesized and single crystals of NNDEAP were successfully grown for the first time by the slow evaporation solution growth technique at room temperature with dimensions 14×10×10 mm3. The formation of the new crystal has been confirmed by single crystal X-ray diffraction studies. The structural perfection of the grown crystal was analyzed by high resolution X-ray diffraction (HRXRD) measurements. The functional groups of NNDEAP have been identified by Fourier transform infrared spectral studies. Thermogravimetric analysis (TGA) and differential thermal analysis (DTA) have also been carried out and the thermal behavior of NNDEAP has been studied. The UV-vis-NIR studies have been carried out to identify the optical transmittance and the cut off wavelength of NNDEAP is identified. The dielectric loss and the dielectric constant as a function of frequency and temperature were measured for the grown crystal and the nature of variation of dielectric constant εr and dielectric losses (tan δ) were studied. Vicker's hardness test has been carried out on NNDEAP to measure the load dependent hardness. The laser induced surface damage threshold for the grown crystal was measured using Nd:YAG laser.

  19. Crystal growth and reflectivity studies of Zn1–MnTe crystals

    Indian Academy of Sciences (India)

    K Veera Brahmam; D Raja Reddy; B K Reddy

    2005-08-01

    Single crystals of Zn1–MnTe were prepared by vertical Bridgman crystal growth method for different concentrations of Mn. Chemical analysis and reflectivity studies were carried out for compositional and band structure properties. Microscopic variation in composition between starting and end compounds was observed from EDAX analysis. Linear dependence of fundamental absorption edge (0) as a function of Mn concentration () was expressed in terms of a straight line fit and a shift in 0 towards higher energy was observed in reflectivity spectra of Zn1–MnTe.

  20. Screening and Crystallization Plates for Manual and High-throughput Protein Crystal Growth

    Science.gov (United States)

    Thorne, Robert E. (Inventor); Berejnov, Viatcheslav (Inventor); Kalinin, Yevgeniy (Inventor)

    2010-01-01

    In one embodiment, a crystallization and screening plate comprises a plurality of cells open at a top and a bottom, a frame that defines the cells in the plate, and at least two films. The first film seals a top of the plate and the second film seals a bottom of the plate. At least one of the films is patterned to strongly pin the contact lines of drops dispensed onto it, fixing their position and shape. The present invention also includes methods and other devices for manual and high-throughput protein crystal growth.

  1. Growth of crystalline semiconductor materials on crystal surfaces

    CERN Document Server

    Aleksandrov, L

    2013-01-01

    Written for physicists, chemists, and engineers specialising in crystal and film growth, semiconductor electronics, and various applications of thin films, this book reviews promising scientific and engineering trends in thin films and thin-films materials science. The first part discusses the physical characteristics of the processes occurring during the deposition and growth of films, the principal methods of obtaining semiconductor films and of reparing substrate surfaces on which crystalline films are grown, and the main applications of films. The second part contains data on epitaxial i

  2. Special phase transformation and crystal growth pathways observed in nanoparticles†

    Directory of Open Access Journals (Sweden)

    Finnegan Michael P

    2003-11-01

    Full Text Available Phase transformation and crystal growth in nanoparticles may happen via mechanisms distinct from those in bulk materials. We combine experimental studies of as-synthesized and hydrothermally coarsened titania (TiO2 and zinc sulfide (ZnS with thermodynamic analysis, kinetic modeling and molecular dynamics (MD simulations. The samples were characterized by transmission electron microscopy, X-ray diffraction, synchrotron X-ray absorption and scattering, and UV-vis spectroscopy. At low temperatures, phase transformation in titania nanoparticles occurs predominantly via interface nucleation at particle–particle contacts. Coarsening and crystal growth of titania nanoparticles can be described using the Smoluchowski equation. Oriented attachment-based crystal growth was common in both hydrothermal solutions and under dry conditions. MD simulations predict large structural perturbations within very fine particles, and are consistent with experimental results showing that ligand binding and change in aggregation state can cause phase transformation without particle coarsening. Such phenomena affect surface reactivity, thus may have important roles in geochemical cycling.

  3. Non-linear optical titanyl arsenates: Crystal growth and properties

    Science.gov (United States)

    Nordborg, Jenni Eva Louise

    Crystals are appreciated not only for their appearance, but also for their unique physical properties which are utilized by the photonic industry in appliances that we come across every day. An important part of enabling the technical use of optical devices is the manufacture of crystals. This dissertation deals with a specific group of materials called the potassium titanyl phosphate (KIP) family, known for their non-linear optical and ferroelectric properties. The isomorphs vary in their linear optical and dielectric properties, which can be tuned to optimize device performance by forming solid solutions of the different materials. Titanyl arsenates have a wide range of near-infrared transmission which makes them useful for tunable infrared lasers. The isomorphs examined in the present work were primarily RbTiOASO4 (RTA) and CsTiOAsO4 (CTA) together with the mixtures RbxCs 1-xTiOAsO4 (RCTA). Large-scale crystals were grown by top seeding solution growth utilizing a three-zone furnace with excellent temperature control. Sufficiently slow cooling and constant upward lifting produced crystals with large volumes useable for technical applications. Optical quality RTA crystals up to 10 x 12 x 20 mm were grown. The greater difficulty in obtaining good crystals of CTA led to the use of mixed RCTA materials. The mixing of rubidium and cesium in RCTA is more favorable to crystal growth than the single components in pure RTA and CTA. Mixed crystals are rubidium-enriched and contain only 20-30% of the cesium concentration in the flux. The cesium atoms show a preference for the larger cation site. The network structure is very little affected by the cation substitution; consequently, the non-linear optical properties of the Rb-rich isomorphic mixtures of RTA and CTA can be expected to remain intact. Crystallographic methods utilizing conventional X-ray tubes, synchrotron radiation and neutron diffraction have been employed to investigate the properties of the atomic

  4. Luminescence labeling and dynamics of growth active crystal surface structures

    Science.gov (United States)

    Bullard, Theresa Vivian

    One aspect of the multifaceted proposal by A. G. Cairns-Smith (CS), that imperfect crystals have the capacity to act as primitive genes by transferring the disposition of their imperfections from one crystal to another, is investigated. An experiment was designed in a model crystalline system unrelated to the composition of the pre-biotic earth but suited to a well-defined test. Plates of potassium hydrogen phthalate were studied in order to ascertain whether, according to CS, parallel screw dislocations could serve as an information store with cores akin to punches in an old computer card. Evidence of screw dislocations was obtained from their associated growth hillocks through differential interference contrast microscopy, atomic force microscopy, and luminescence labeling of hillocks in conjunction with confocal laser scanning microscopy. Inheritance was evaluated by the corresponding patterns of luminescence developed in 'daughter' crystals grown from seed in the presence of fluorophores. The dispositions and evolution of growth active hillock patterns were quantified by fractal correlation analysis and statistical analysis. Along the way, we came to realize that transferring information encoded in the disposition of screw dislocations is complicated by several factors that lead to 'mutations' in the information stored in the pattern of defects. These observations forced us to confront the fundamental mechanisms that give rise to screw dislocations. It became clear that inter-hillock correlations play a significant role in the appearance of new dislocations through growth, and cause the overall pattern of hillocks to be non-random. Tendencies for clustering and correlations along various crystallographic directions were observed. Investigations into the dye-crystal surface chemistries and interactions with hillock steps also ensued through a combination of experimental techniques and force-field calculations. It was established that certain dye molecules not

  5. Oriented growth and assembly of zeolite crystals on substrates

    Institute of Scientific and Technical Information of China (English)

    ZHOU Ming; ZHANG BaoQuan; LIU XiuFeng

    2008-01-01

    The aligned array and thin film of zeolites and molecular sieves possess a variety of potential applica-tions in membrane separation and catalysis, chemical sensors, and microelectronic devices. There are two main synthesis methods for manufacturing the aligned arrays and thin films of zeolites and mo-lecular sieves, i.e. in situ hydrothermal reaction and self-assembly of crystal grains on substrates. Both of them have attracted much attention in the scientific community worldwide. A series of significant progress has been made in recent years. By the in situ hydrothermal synthesis, the oriented nucleation and growth of zeolite and molecular sieve crystals can be achieved by modifying the surface properties of substrates or by changing the composition of synthesis solutions, leading to the formation of uni-formly oriented multicrystal-aligned arrays or thin films. On the other hand, the crystal grains of zeo-lites and molecular sieves can be assembled onto the substrate surface in required orientation using different bondages, for instance, the microstructure in the array or thin film can be controlled. This review is going to summarize and comment the significant results and progress reported recently in manufacturing highly covered and uniformly aligned arrays or thin films of zeolites and molecular sieves. It involves (1) in situ growth of highly aligned zeolite arrays and thin films via embedding func-tional groups on the substrate surface, modifying the surface microstructure of substrates, as well as varying the composition of synthesis solutions; (2) assembly of zeolite and molecular sieve crystals on various substrates to form aligned arrays and thin films with full coverage by covalent, ionic, and in-termolecular coupling interactions between crystals and substrates; (3) coupling surface assembly with microcontact printing or photoetching technique to produce patterned zeolite arrays and thin films. Finally, the functionality and applications of zeolite

  6. Growth and properties of Lithium Salicylate single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Zaitseva, N; Newby, J; Hull, G; Saw, C; Carman, L; Cherepy, N; Payne, S

    2009-02-13

    An attractive feature of {sup 6}Li containing fluorescence materials that determines their potential application in radiation detection is the capture reaction with slow ({approx}< 100 keV) neutrons: {sup 6}Li + n = {sup 4}He + {sup 3}H + 4.8MeV. The use of {sup 6}Li-salicylate (LiSal, LiC{sub 6}H{sub 5}O{sub 3}) for thermal neutron detection was previously studied in liquid and polycrystalline scintillators. The studies showed that both liquid and polycrystalline LiSal scintillators could be utilized in pulse shape discrimination (PSD) techniques that enable separation of neutrons from the background gamma radiation. However, it was found that the efficiency of neutron detection using LiSal in liquid solutions was severely limited by its low solubility in commonly used organic solvents like, for example, toluene or xylene. Better results were obtained with neutron detectors containing the compound in its crystalline form, such as pressed pellets, or microscopic-scale (7-14 micron) crystals dispersed in various media. The expectation drown from these studies was that further improvement of pulse height, PSD, and efficiency characteristics could be reached with larger and more transparent LiSal crystals, growth of which has not been reported so far. In this paper, we present the first results on growth and characterization of relatively large, a cm-scale size, single crystals of LiSal with good optical quality. The crystals were grown both from aqueous and anhydrous (methanol) media, mainly for neutron detection studies. However, the results on growth and structural characterization may be interesting for other fields where LiSal, together with other alkali metal salicylates, is used for biological, medical, and chemical (as catalyst) applications.

  7. Researches on the Growth Habit and Optical Properties of Fe3+ Ion Doped KDP Crystal

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    During the process of KDP crystal growth, metal ions strongly affect the growth habit and optical properties of KDP single crystal. In this paper, KDP crystals were grown from an aqueous solution doped with different concentration of Fe3+ dopant by traditional temperaturereduction method and "point-seed" rapid growth method. Furthermore, we examined the light scatter and measured the transmission of these KDP crystals. It is found that the dopant of Fe3+ ion can improve the stability of the KDP growth solution when its concentration is less than 30 ppm.The effects of Fe3+ ion on the growth habit and optical properties of KDP crystal are also obvious.

  8. Growth, spectral and crystallization perfection studies of semi organic non linear optical crystal - L-alanine lithium chloride

    Science.gov (United States)

    Redrothu, Hanumantharao; Kalainathan, S.; Bhagavannarayana, G.

    2012-06-01

    Single crystals of L-alanine lithium chloride single crystals were successfully grown using slow evaporation solution growth technique at constant temperature (303K). The formation of the new crystal has been confirmed by single-crystal X-ray diffraction, FT-IR studies. The crystalline perfection was analyzed by high-resolution X-ray diffraction (HRXRD) rocking curve measurements. The powder second harmonic generation (SHG) has been confirmed by Nd: YAG laser. The results have been discussed in detail.

  9. Crystal growth of LiIn1-xGaxSe2 crystals

    Science.gov (United States)

    Wiggins, Brenden; Bell, Joseph; Woodward, Jonathan; Goodwin, Brandon; Stassun, Keivan; Burger, Arnold; Stowe, Ashley

    2017-06-01

    Lithium containing chalcogenide single crystals have become very promising materials for photonics and radiation detection. Detection applications include nuclear nonproliferation, neutron science, and stellar investigations for the search of life. Synthesis and single crystal growth methods for lithium containing chalcogenide, specifically LiIn1-xGaxSe2, single crystals are discussed. This study elucidates the possibility of improving neutron detection by reducing the indium capture contribution; with the incorporation of the lithium-6 isotope, gallium substitution may overcome the neutron detection efficiency limitation of 6LiInSe2 due to appreciable neutron capture by the indium-115 isotope. As a figure of merit, the ternary parent compounds 6LiInSe2 and 6LiGaSe2 were included in this study. Quality crystals can be obtained utilizing the vertical Bridgman method to produce quaternary compounds with tunable optical properties. Quaternary crystals of varying quality depending on the gallium concentration, approximately 5×5×2 mm3 or larger in volume, were harvested, analyzed and revealed tunable absorption characteristics between 2.8-3.4 eV.

  10. Acquisition of Single Crystal Growth and Characterization Equipment

    Energy Technology Data Exchange (ETDEWEB)

    Maple, M. Brian; Zocco, Diego A.

    2008-12-09

    Final Report for DOE Grant No. DE-FG02-04ER46178 'Acquisition of Single Crystal Growth and Characterization Equipment'. There is growing concern in the condensed matter community that the need for quality crystal growth and materials preparation laboratories is not being met in the United States. It has been suggested that there are too many researchers performing measurements on too few materials. As a result, many user facilities are not being used optimally. The number of proficient crystal growers is too small. In addition, insufficient attention is being paid to the enterprise of finding new and interesting materials, which is the driving force behind much of condensed matter research and, ultimately, technology. While a detailed assessment of this situation is clearly needed, enough evidence of a problem already exists to compel a general consensus that the situation must be addressed promptly. This final report describes the work carried out during the last four years in our group, in which a state-of-the-art single crystal growth and characterization facility was established for the study of novel oxides and intermetallic compounds of rare earth, actinide and transition metal elements. Research emphasis is on the physics of superconducting (SC), magnetic, heavy fermion (HF), non-Fermi liquid (NFL) and other types of strongly correlated electron phenomena in bulk single crystals. Properties of these materials are being studied as a function of concentration of chemical constituents, temperature, pressure, and magnetic field, which provide information about the electronic, lattice, and magnetic excitations at the root of various strongly correlated electron phenomena. Most importantly, the facility makes possible the investigation of material properties that can only be achieved in high quality bulk single crystals, including magnetic and transport phenomena, studies of the effects of disorder, properties in the clean limit, and spectroscopic and

  11. Optimal Control of Oxygen Concentration in a Magnetic Czochralski Crystal Growth by Response Surface Methodology

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Concepts and techniques of response surface methodology have been widely applied in many branches of engineering, especially in the chemical and manufacturing areas. This paper presents an application of the methodology in a magnetic crystal Czochralski growth system for single crystal silicon to optimize the oxygen concentration at the crystal growth interface in a cusp magnetic field. The simulation demonstrates that the response surface methodology is a feasible algorithm for the optimization of the Czochralski crystal growth process.

  12. Growth and Characterization of Lead-free Piezoelectric Single Crystals

    Directory of Open Access Journals (Sweden)

    Philippe Veber

    2015-11-01

    Full Text Available Lead-free piezoelectric materials attract more and more attention owing to the environmental toxicity of lead-containing materials. In this work, we review our first attempts of single crystal grown by the top-seeded solution growth method of BaTiO3 substituted with zirconium and calcium (BCTZ and (K0.5Na0.5NbO3 substituted with lithium, tantalum, and antimony (KNLSTN. The growth methodology is optimized in order to reach the best compositions where enhanced properties are expected. Chemical analysis and electrical characterizations are presented for both kinds of crystals. The compositionally-dependent electrical performance is investigated for a better understanding of the relationship between the composition and electrical properties. A cross-over from relaxor to ferroelectric state in BCTZ solid solution is evidenced similar to the one reported in ceramics. In KNLSTN single crystals, we observed a substantial evolution of the orthorhombic-to-tetragonal phase transition under minute composition changes.

  13. Diagenetic Crystal Growth in the Murray Formation, Gale Crater, Mars

    Science.gov (United States)

    Kah, L. C.; Kronyak, R. E.; Ming, D. W.; Grotzinger, J. P.; Schieber, J.; Sumner, D. Y.; Edgett, K. S.

    2015-01-01

    The Pahrump region (Gale Crater, Mars) marks a critical transition between sedimentary environments dominated by alluvial-to-fluvial materials associated with the Gale crater rim, and depositional environments fundamentally linked to the crater's central mound, Mount Sharp. At Pahrump, the Murray formation consists of an approximately 14-meter thick succession dominated by massive to finely laminated mudstone with occasional interbeds of cross-bedded sandstone, and is best interpreted as a dominantly lacustrine environment containing tongues of prograding fluvial material. Murray formation mudstones contain abundant evidence for early diagenetic mineral precipitation and its subsequent removal by later diagenetic processes. Lenticular mineral growth is particularly common within lacustrine mudstone deposits at the Pahrump locality. High-resolution MAHLI images taken by the Curiosity rover permit detailed morphological and spatial analysis of these features. Millimeter-scale lenticular features occur in massive to well-laminated mudstone lithologies and are interpreted as pseudomorphs after calcium sulfate. The distribution and orientation of lenticular features suggests deposition at or near the sediment-water (or sediment-air) interface. Retention of chemical signals similar to host rock suggests that original precipitation was likely poikilotopic, incorporating substantial amounts of the primary matrix. Although poikilotopic crystal growth is common in burial environments, it also occurs during early diagenetic crystal growth within unlithified sediment where high rates of crystal growth are common. Loss of original calcium sulfate mineralogy suggests dissolution by mildly acidic, later-diagenetic fluids. As with lenticular voids observed at Meridiani by the Opportunity Rover, these features indicate that calcium sulfate deposition may have been widespread on early Mars; dissolution of depositional and early diagenetic minerals is a likely source for both calcium

  14. In vitro crystallization, characterization and growth-inhibition study of urinary type struvite crystals

    Science.gov (United States)

    Chauhan, Chetan K.; Joshi, Mihir J.

    2013-01-01

    The formation of urinary stones, known as nephrolithiasis or urolithiasis, is a serious, debilitating problem throughout the world. Struvite—NH4MgPO4·6H2O, ammonium magnesium phosphate hexahydrate, is one of the components of urinary stones (calculi). Struvite crystals with different morphologies were grown by in vitro single diffusion gel growth technique with different growth parameters. The crystals were characterized by powder XRD, FT-IR, thermal analysis and dielectric study. The powder XRD results of struvite confirmed the orthorhombic crystal structure. The FT-IR spectrum proved the presence of water of hydration, metal-oxygen bond, N-H bond and P-O bond. For thermal analysis TGA, DTA and DSC were carried out simultaneously. The kinetic and thermodynamic parameters of dehydration/decomposition process were calculated. Vickers micro-hardness and related mechanical parameters were also calculated. The in vitro growth inhibition studies of struvite by the juice of Citrus medica Linn as well as the herbal extracts of Commiphora wightii, Boerhaavia diffusa Linn and Rotula aquatica Lour were carried out and found potent inhibitors of struvite.

  15. Sapphire hard X-ray Fabry-Perot resonators for synchrotron experiments.

    Science.gov (United States)

    Tsai, Yi Wei; Wu, Yu Hsin; Chang, Ying Yi; Liu, Wen Chung; Liu, Hong Lin; Chu, Chia Hong; Chen, Pei Chi; Lin, Pao Te; Fu, Chien Chung; Chang, Shih Lin

    2016-05-01

    Hard X-ray Fabry-Perot resonators (FPRs) made from sapphire crystals were constructed and characterized. The FPRs consisted of two crystal plates, part of a monolithic crystal structure of Al2O3, acting as a pair of mirrors, for the backward reflection (0 0 0 30) of hard X-rays at 14.3147 keV. The dimensional accuracy during manufacturing and the defect density in the crystal in relation to the resonance efficiency of sapphire FPRs were analyzed from a theoretical standpoint based on X-ray cavity resonance and measurements using scanning electron microscopic and X-ray topographic techniques for crystal defects. Well defined resonance spectra of sapphire FPRs were successfully obtained, and were comparable with the theoretical predictions.

  16. Origin of Difference in Photocatalytic Activity of ZnO (002 Grown on a- and c-Face Sapphire

    Directory of Open Access Journals (Sweden)

    Guoqiang Li

    2014-01-01

    Full Text Available The oriented (002 ZnO films were grown on a- and c-face sapphire by pulsed laser deposition. The X-ray diffraction analysis revealed that the oriented (002 ZnO films were epitaxially grown on the substrate successfully. The sample on a-face sapphire had higher crystal quality. However, the photocatalytic activity for Rhodamine B degradation of ZnO film on c-face sapphire was higher than that on a-face sapphire. The Raman spectrum and XPS analysis suggested that the sample on a-face sapphire had higher concentration of defects. The result of the contact angle measurement revealed that the sample on c-face sapphire had higher surface energy. And the investigation of the surface conductance implied that the higher light conductance was helpful for the photocatalytic activity.

  17. Effects of sapphire substrates surface treatment on the ZnO thin films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yinzhen [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China)], E-mail: agwyz@yahoo.com.cn; Chu Benli [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China)

    2008-06-01

    The surface treatment effects of sapphire substrate on the ZnO thin films grown by magnetron sputtering were studied. The sapphire substrates properties have been investigated by means of atomic force microscopy (AFM) and X-ray diffraction rocking curves (XRCs). The results show that sapphire substrate surfaces have the best quality by CMP with subsequent chemical etching. The surface treatment effects of sapphire substrate on the ZnO thin films were examined by X-ray diffraction (XRD) and photoluminescence (PL) measurements. Results show that the intensity of (0 0 2) diffraction peak of ZnO thin films on sapphire substrates treated by CMP with subsequent chemical etching was strongest, FWHM of (0 0 2) diffraction peak is the narrowest and the intensity of UV peak of PL spectrum is strongest, indicating surface treatment on sapphire substrate preparation may improve ZnO thin films crystal quality and photoluminescent property.

  18. Some Aspects of PVT Low Supersaturation Nucleation and Contactless Crystal Growth

    Science.gov (United States)

    Grasza, K.; Palosz, W.

    1996-01-01

    The basic principles of the contactless growth of crystals from the vapor in combination with the process of low-supersaturation nucleation are discussed. The mathematical formulation of the morphological stability criterion in vapor growth systems is given and its implications for contactless growth technique are analyzed. A diagram for selection of proper temperature conditions for growth of CdTe crystals is presented.

  19. Single Crystals of Organolead Halide Perovskites: Growth, Characterization, and Applications

    KAUST Repository

    Peng, Wei

    2017-04-01

    crystals will be discussed in Chapter 3 and 4. Despite their outstanding charge transport characteristics, organolead halide perovskite single crystals grown by hitherto reported crystallization methods are not suitable for most optoelectronic devices due to their small aspect ratios and free standing growth. As the other major part of work of this dissertation, explorative work on growing organolead halide perovskite monocrystalline films and further their application in solar cells will be discussed in Chapter 5.

  20. Validation, verification, and benchmarking of crystal growth simulations

    Science.gov (United States)

    Dadzis, K.; Bönisch, P.; Sylla, L.; Richter, T.

    2017-09-01

    The variety of physical phenomena in crystal growth processes requires diverse software tools for the numerical simulations. Both, dedicated 2D or 3D ready-to-use software for coupled simulations of a crystallization furnace and general-purpose 3D simulation packages have been used in the literature. This work proposes a general strategy for model development: validation of the physical model using model experiments; verification of the numerical model using analytical or high-accuracy solutions; testing of the computational efficiency using complex benchmark cases. The application of these steps is demonstrated for various models in directional solidification of silicon showing the capabilities of various open source or commercial software packages.

  1. Model of apparent crystal growth rate and kinetics of seeded precipitation from sodium aluminate solution

    Institute of Scientific and Technical Information of China (English)

    LI Xiao-bin; LIU Zhi-jian; XU Xiao-hui; ZHOU Qiu-sheng; PENG Zhi-hong; LIU Gui-hua

    2005-01-01

    Based on the population balance equation in a batch crystallizer characteristic of seeded precipitation, a model to calculate the rate of apparent crystal growth of aluminum hydroxide from the size distribution was deve-loped. The simulation results indicate that the rate of apparent crystal growth during seeded precipitation exhibits a manifest dependence on the crystal size. In general, there is an obvious increase in the apparent crystal growth rate with the augment in crystal size. The apparent activation energy increases with the increase of characteristic crystal size, which indicates that the growth of small crystals is controlled by surface chemical reaction; it is gradually controlled by both the surface reaction and diffusion with the augment in crystal size.

  2. In situ investigation of growth rates and growth rate dispersion of α-lactose monohydrate crystals

    Science.gov (United States)

    Dincer, T. D.; Ogden, M. I.; Parkinson, G. M.

    2009-02-01

    The growth rates and growth rate dispersion (GRD) of four different faces of α-lactose monohydrate crystal were measured at 30, 40 and 50 °C in the relative supersaturation range 0.55-2.33 in aqueous solutions. The overall growth rate of the crystal is around 50-60% of the (0 1 0) face of the crystal. The power law was applied to the growth rates of the four faces and the activation energies were calculated to be between 9.5 and 13.7 kcal/mol. This indicates a diffusion-controlled growth, but the exponents calculated are between 2.5 and 3.1 which are higher than unity. Introduction of critical supersaturation decreased the exponents to between 1.8 and 2.4. The variance of GRD for the (0 1 0) face is twice the variance of the GRD of the (1 1 0) and (1 0 0) faces and 10 times higher than the (1 1¯ 1¯) face at the same supersaturations and temperatures. The GRD of the four faces were similar when expressed as a function of growth rate. However, the (0 1 1) face displayed lower GRD than the other faces at the same temperatures and supersaturations.

  3. Potential productivity benefits of float-zone versus Czochralski crystal growth

    Science.gov (United States)

    Abe, T.

    1985-01-01

    Efficient mass production of single-crystal silicon is necessary for the efficient silicon solar arrays needed in the coming decade. However, it is anticipated that there will be difficulty growing such volumes of crystals using conventional Czochralski (Cz) methods. While the productivity of single crystals might increase with a crystal diameter increase, there are two obstacles to the mass production of large diameter Czochralski crystals, the long production cycle due to slow growth rate and the high heat requirements of the furnaces. Also counterproductive would be the large resistivity gradient along the growth direction of the crystals due to impurity concentration. Comparison between Float zone (FZ) and Cz crystal growth on the basis of a crystal 150 mm in diameter is on an order of two to four times in favor of the FZ method. This advantage results from high growth rates and steady-state growth while maintaining a dislocation-free condition and impurity segregation.

  4. Pumping of titanium sapphire laser

    Science.gov (United States)

    Jelínková, H.; Vaněk, P.; Valach, P.; Hamal, K.; Kubelka, J.; Škoda, V.; Jelínek, M.

    1993-02-01

    Two methods of Ti:Sapphire pumping for the generation of tunable laser radiation in the visible region were studied. For coherent pumping, the radiation of the second harmonic of a Nd:YAP laser was used and a maximum output energy of E out=4.5 mJ was reached from the Ti:Sapphire laser. For noncoherent pumping, two different lengths of flashlamp pulses were used and a maximum of E out=300 mJ was obtained. Preliminary estimations of the wavelength range of tunability were made.

  5. Recovery of surfaces from impurity poisoning during crystal growth

    Science.gov (United States)

    Land, Terry A.; Martin, Tracie L.; Potapenko, Sergey; Palmore, G. Tayhas; de Yoreo, James J.

    1999-06-01

    Growth and dissolution of crystal surfaces are central to processes as diverse as pharmaceutical manufacturing,, corrosion, single-crystal production and mineralization in geochemical and biological environments,. Impurities are either unavoidable features of these processes or intentionally introduced to modify the products. Those that act as inhibiting agents induce a so-called `dead zone', a regime of low supersaturation where growth ceases. Models based on the classic theory of Cabrera and Vermilyea explain behaviour near the dead zone in terms of the pinning of elementary step motion by impurities,. Despite general acceptance of this theory, a number of commonly investigated systems exhibit behaviour not predicted by such models. Moreover, no clear microscopic picture of impurity-step interactions currently exists. Here we use atomic force microscopy to investigate the potassium dihydrogen phosphate {100} surface as it emerges from the dead zone. We show that traditional models are not able to account for the behaviour of this system because they consider only elementary steps, whereas it is the propagation of macrosteps (bunches of monolayer steps) that leads to resurrection of growthout of the dead zone. We present a simple physical model of this process that includes macrosteps and relates characteristics of growth near the dead zone to the timescale for impurity adsorption.

  6. Kinetics of faceting of crystals in growth, etching, and equilibrium

    Science.gov (United States)

    Vlachos, D. G.; Schmidt, L. D.; Aris, R.

    1993-03-01

    The faceting of crystals in equilibrium with the gas phase and also during crystal growth and etching conditions is studied using the Monte Carlo method. The dynamics of the transformation of unstable crystallographic orientations into hill and valley structures and the spatial patterns that develop are examined as functions of surface temperature, crystallographic orientation, and strength of interatomic potential for two transport processes: adsorption-desorption and surface diffusion. The results are compared with the continuum theory for facet formation. Thermodynamically unstable orientations break into hill and valley structures, and faceting exhibits three time regimes: disordering, facet nucleation, and coarsening of small facets to large facets. Faceting is accelerated as temperature increases, but thermal roughening can occur at high temperatures. Surface diffusion is the dominant mechanism at short times and small facets but adsorption-desorption becomes important at long times and large facets. Growth and etching promote faceting for conditions close to equilibrium but induce kinetic roughening for conditions far from equilibrium. Simultaneous irreversible growth and etching conditions with fast surface diffusion result in enhanced faceting.

  7. Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal Structure

    Science.gov (United States)

    Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)

    2016-01-01

    An integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

  8. Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal Structure

    Science.gov (United States)

    Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)

    2017-01-01

    An integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

  9. Modeling of crystal morphology : growth simulation on facets in arbitrary orientations

    NARCIS (Netherlands)

    Boerrigter, Stephan Xander Mattheus

    2003-01-01

    Many aspects of crystal morphology modeling are studied in this thesis. Most important of all, is the dependence of crystal growth on supersaturation--the driving force for crystallization--which not only influences the crystal morphology, but also polymorphism and nucleation. It is shown that an

  10. A study about some phosphate derivatives as inhibitors of calcium oxalate crystal growth

    Science.gov (United States)

    Grases, F.; March, P.

    1989-08-01

    The kinetic of crystal growth of calcium oxalate monohydrate seed crystals were investigated potentiometrically in the presence of several phosphate derivatives, D-fructose-1,6-diphosphate, pyrophosphate, methylene diphosphonate and phytate, and it was found that in some cases they strongly inhibited crystal growth. The inhibitory action of the different substances assayed was comparatively evaluated.

  11. Growth Defects in Langasite Crystals Observed with White Beam Synchrotron Radiation Topography

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Langasite single crystal was grown by the Czochralski method and its perfection was assessed by white beam synchrotron radiation topography. It is found that the growth core and the growth striations are the primary growth defects and they show strong X-ray kinematical contrast in the topographs. Another typical defect in LGS crystal is dislocation. The formation mechanisms of these growth defects in LGS crystals were discussed.

  12. Catalytic epitaxy of ZnO whiskers via the vapor-crystal mechanism

    Science.gov (United States)

    Muslimov, A. E.; Butashin, A. V.; Kanevsky, V. M.; Babaev, V. A.; Ismailov, A. M.

    2017-05-01

    A model of oriented growth of (0001) ZnO whiskers on sapphire substrates via the vapor-crystal mechanism using the catalytic properties of gold islands is proposed. The morphological transition from the primary pyramidal ZnO structures to hexagonal ZnO whiskers is described in terms of the minimization of the free energy density of three-dimensional heteroepitaxial islands.

  13. Viscosity solutions for a polymer crystal growth model

    CERN Document Server

    Cardaliaguet, Pierre; Monteillet, Aurélien

    2010-01-01

    We prove existence of a solution for a polymer crystal growth model describing the movement of a front $(\\Gamma(t))$ evolving with a nonlocal velocity. In this model the nonlocal velocity is linked to the solution of a heat equation with source $\\delta_\\Gamma$. The proof relies on new regularity results for the eikonal equation, in which the velocity is positive but merely measurable in time and with H\\"{o}lder bounds in space. From this result, we deduce \\textit{a priori} regularity for the front. On the other hand, under this regularity assumption, we prove bounds and regularity estimates for the solution of the heat equation.

  14. Growth of bulk gadolinium pyrosilicate single crystals for scintillators

    Science.gov (United States)

    Gerasymov, I.; Sidletskiy, O.; Neicheva, S.; Grinyov, B.; Baumer, V.; Galenin, E.; Katrunov, K.; Tkachenko, S.; Voloshina, O.; Zhukov, A.

    2011-03-01

    Ce, Pr, and La-doped gadolinium pyrosilicate Gd2Si2O7 (GPS) single crystals were grown by the Czochralski and Top Seeded Solution Growth (TSSG) techniques for the first time. Formation conditions of different pyrosilicate phases were determined. X-ray luminescence integral intensity of Ce-doped GPS is about one order of magnitude higher in comparison with gadolinium oxyorthosilicate Gd2SiO5:Ce (GSO:Ce). All samples demonstrate temperature stability of luminescence yield up to 400 K.

  15. Direction-specific interactions control crystal growth by oriented attachment

    DEFF Research Database (Denmark)

    Li, Dongsheng; Nielsen, Michael H; Lee, Jonathan R.I.

    2012-01-01

    initiated at the contact point. Interface elimination proceeds at a rate consistent with the curvature dependence of the Gibbs free energy. Measured translational and rotational accelerations show that strong, highly direction-specific interactions drive crystal growth via oriented attachment....... using a fluid cell to directly observe oriented attachment of iron oxyhydroxide nanoparticles. The particles undergo continuous rotation and interaction until they find a perfect lattice match. A sudden jump to contact then occurs over less than 1 nanometer, followed by lateral atom-by-atom addition...

  16. Velocity selection in the symmetric model of dendritic crystal growth

    Science.gov (United States)

    Barbieri, Angelo; Hong, Daniel C.; Langer, J. S.

    1987-01-01

    An analytic solution of the problem of velocity selection in a fully nonlocal model of dendritic crystal growth is presented. The analysis uses a WKB technique to derive and evaluate a solvability condition for the existence of steady-state needle-like solidification fronts in the limit of small under-cooling Delta. For the two-dimensional symmetric model with a capillary anisotropy of strength alpha, it is found that the velocity is proportional to (Delta to the 4th) times (alpha exp 7/4). The application of the method in three dimensions is also described.

  17. Kinetic Processes Crystal Growth, Diffusion, and Phase Transformations in Materials

    CERN Document Server

    Jackson, Kenneth A

    2004-01-01

    The formation of solids is governed by kinetic processes, which are closely related to the macroscopic behaviour of the resulting materials. With the main focus on ease of understanding, the author begins with the basic processes at the atomic level to illustrate their connections to material properties. Diffusion processes during crystal growth and phase transformations are examined in detail. Since the underlying mathematics are very complex, approximation methods typically used in practice are the prime choice of approach. Apart from metals and alloys, the book places special emphasis on th

  18. Viscosity solutions for a polymer crystal growth model

    OpenAIRE

    Cardaliaguet, Pierre; Ley, Olivier; Monteillet, Aurélien

    2011-01-01

    International audience; We prove existence of a solution for a polymer crystal growth model describing the movement of a front $(\\Gamma(t))$ evolving with a nonlocal velocity. In this model the nonlocal velocity is linked to the solution of a heat equation with source $\\delta_\\Gamma$. The proof relies on new regularity results for the eikonal equation, in which the velocity is positive but merely measurable in time and with H\\"{o}lder bounds in space. From this result, we deduce \\textit{a pri...

  19. Newly designed multilayer thin film mirror for dispersion compensation in Ti: sapphire femtosecond lasers

    Institute of Scientific and Technical Information of China (English)

    Chunyan Liao; Jianda Shao; Jianbing Huang; Zhengxiu Fan; Hongbo He

    2005-01-01

    @@ There are two different effects to generate group delay dispersion by multilayer thin film mirrors: chirper effect and Gires-Tournois effect. Both effects are employed to introduce desired dispersion in the designed mirror. Thus the designed mirror provides large dispersion throughout broad waveband. Such mirror can be used for dispersion compensation in Ti:sapphire femtosecond lasers. Most group delay dispersion of a 5-mm Ti:sapphire crystal can be compensated perfectly with only four bounces of the designed mirror.

  20. Jones calculus modeling and analysis of the thermal distortion in a Ti:sapphire laser amplifier.

    Science.gov (United States)

    Cho, Seryeyohan; Jeong, Jihoon; Yu, Tae Jun

    2016-06-27

    The mathematical modeling of an anisotropic Ti:sapphire crystal with a significant thermal load is performed. The model is expressed by the differential Jones matrix. A thermally induced distortion in the chirped-pulse amplification process is shown by the solution of the differential Jones matrix. Using this model, the thermally distorted spatio-temporal laser beam shape is calculated for a high-power and high-repetition-rate Ti:sapphire amplifier.

  1. Inclusion free cadmium zinc tellurium and cadmium tellurium crystals and associated growth method

    Science.gov (United States)

    Bolotnikov, Aleskey E.; James, Ralph B.

    2010-07-20

    The present disclosure provides systems and methods for crystal growth of cadmium zinc tellurium (CZT) and cadmium tellurium (CdTe) crystals with an inverted growth reactor chamber. The inverted growth reactor chamber enables growth of single, large, high purity CZT and CdTe crystals that can be used, for example, in X-ray and gamma detection, substrates for infrared detectors, or the like. The inverted growth reactor chamber enables reductions in the presence of Te inclusions, which are recognized as an important limiting factor in using CZT or CdTe as radiation detectors. The inverted growth reactor chamber can be utilized with existing crystal growth techniques such as the Bridgman crystal growth mechanism and the like. In an exemplary embodiment, the inverted growth reactor chamber is a U-shaped ampoule.

  2. Growth and evaluation of lanthanoids orthoniobates single crystals processed by a miniature pedestal growth technique

    Energy Technology Data Exchange (ETDEWEB)

    Octaviano, E.S. [Universidade Camilo Castelo Branco, Descalvado, SP (Brazil); Reyes Ardila, D. [Departmento de Fisica, Universidad de Santiago de Chile (Chile); Andrade, L.H.C.; Siu Li, M.; Andreeta, J.P. [Instituto de Fisica de Sao Carlos, Departamento de Fisica e Ciencia dos Materiais, Universidade de Sao Paulo, Sao Carlos, SP (Brazil)

    2004-10-01

    Optimized conditions for the growth of lanthanoids orthoniobates (LnNbO{sub 4}, Ln=lanthanide elements) single crystal minirods by a floating zone technique were investigated. Adequate atmospheres and pulling to feeding speed ratios to grow these materials were determined. Emphasis is given to the study of LaNbO{sub 4} because of their more favorable growth conditions and crystalline quality. This material can be efficiently doped with rare earth elements such as erbium. It grows with high crystallinity and its preferential growth direction is [110]. A preliminary evaluation of optical properties of Er{sup 3+}-doped LaNbO{sub 4} single crystal under the Judd-Ofelt formalism indicates spectral parameters {omega}{sub t} close and even larger than for Er{sup 3+} ions in YVO{sub 4}. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. On the origin of radiation growth of hcp crystals

    Energy Technology Data Exchange (ETDEWEB)

    Golubov, Stanislav I [ORNL; Barashev, Aleksandr [University of Liverpool; Stoller, Roger E [ORNL

    2012-03-01

    The aim of the present work is to study theoretically the radiation growth (RG) of hcp-type materials with a particular focus on the effect of one-dimensionally (1-D) migrating clusters of self-interstitial atoms (SIAs), which are steadily produced in displacement cascades under neutron or heavy-ion irradiation. A reaction-diffusion model is developed for the description of RG in single hcp-type metallic crystals. The model reproduces all RG stages observed in neutron-irradiated annealed samples of pure Zr and Zr alloys, such as high strain rate at low, strain saturation at intermediate and breakaway growth at relatively high irradiation doses. In addition, it accounts for the striking observations of negative strains in prismatic directions and coexistence of vacancy- and SIA-type prismatic loops. The role of cold work in RG behavior and alignment of the vacancy-type loops along basal planes are revealed and the maximum strain rate is estimated.

  4. Semiconductor Crystal Growth in Static and Rotating Magnetic fields

    Science.gov (United States)

    Volz, Martin

    2004-01-01

    Magnetic fields have been applied during the growth of bulk semiconductor crystals to control the convective flow behavior of the melt. A static magnetic field established Lorentz forces which tend to reduce the convective intensity in the melt. At sufficiently high magnetic field strengths, a boundary layer is established ahead of the solid-liquid interface where mass transport is dominated by diffusion. This can have a significant effect on segregation behavior and can eliminate striations in grown crystals resulting from convective instabilities. Experiments on dilute (Ge:Ga) and solid solution (Ge-Si) semiconductor systems show a transition from a completely mixed convective state to a diffusion-controlled state between 0 and 5 Tesla. In HgCdTe, radial segregation approached the diffusion limited regime and the curvature of the solid-liquid interface was reduced by a factor of 3 during growth in magnetic fields in excess of 0.5 Tesla. Convection can also be controlled during growth at reduced gravitational levels. However, the direction of the residual steady-state acceleration vector can compromise this effect if it cannot be controlled. A magnetic field in reduced gravity can suppress disturbances caused by residual transverse accelerations and by random non-steady accelerations. Indeed, a joint program between NASA and the NHMFL resulted in the construction of a prototype spaceflight magnet for crystal growth applications. An alternative to the suppression of convection by static magnetic fields and reduced gravity is the imposition of controlled steady flow generated by rotating magnetic fields (RMF)'s. The potential benefits of an RMF include homogenization of the melt temperature and concentration distribution, and control of the solid-liquid interface shape. Adjusting the strength and frequency of the applied magnetic field allows tailoring of the resultant flow field. A limitation of RMF's is that they introduce deleterious instabilities above a

  5. The influence of crystal morphology on the kinetics of growth of calcium oxalate monohydrate

    Science.gov (United States)

    Millan, A.; Sohnel, O.; Grases, F.

    1997-08-01

    The growth of several calcium oxalate monohydrate seeds in the presence and absence of additives (phytate, EDTA and citrate) has been followed by potentiometry measurements. Growth rates have been calculated from precipitate curves by a cubic spline method and represented in logarithmic plots versus supersaturation. Crystal growth kinetics were found to be dependent on crystal morphology, crystal perfection and degree of aggregation. Some seeds were dissolving in supersaturated solutions. Other seeds showed an initial growth phase of high-order kinetics. The effect of the additives was also different on each seed. Three alternative mechanisms for calcium oxalate crystal growth are proposed.

  6. A preliminary review of organic materials single crystal growth by the Czochralski technique

    Science.gov (United States)

    Penn, B. G.; Shields, A. W.; Frazier, D. O.

    1988-01-01

    The growth of single crystals of organic compounds by the Czochralski method is reviewed. From the literature it is found that single crystals of benzil, a nonlinear optical material with a d sub 11 value of 11.2 + or - 1.5 x d sub 11 value of alpha quartz, has fewer dislocations than generally contained in Bridgman crystals. More perfect crystals were grown by repeated Czochralski growth. This consists of etching away the defect-containing portion of a Czochralski grown crystal and using it as a seed for further growth. Other compounds used to grow single crystals are benzophenone, 12-tricosanone (laurone), and salol. The physical properties, growth apparatus, and processing conditions presented in the literature are discussed. Moreover, some of the possible advantages of growing single crystals of organic compounds in microgravity to obtain more perfect crystals than on Earth are reviewed.

  7. Solution Growth and Characterization of Single Crystals on Earth and in Microgravity

    Science.gov (United States)

    Aggarwal, M. D.; Currie, J. R.; Penn, B. G.; Batra, A. K.; Lal, R. B.

    2007-01-01

    Crystal growth has been of interest to physicists and engineers for a long time because of their unique properties. Single crystals are utilized in such diverse applications as pharmaceuticals, computers, infrared detectors, frequency measurements, piezoelectric devices, a variety of high-technology devices, and sensors. Solution crystal growth is one of the important techniques to grow a variety of crystals when the material decomposes at the melting point and a suitable solvent is available to make a saturated solution at a desired temperature. In this Technical Memorandum (TM) an attempt is made to give the fundamentals of growing crystals from solution including improved designs of various crystallizers. Since the same solution crystal growth technique could not be used in microgravity, the authors proposed a new cooled-sting technique to grow crystals in space. The authors experience from conducting two Space Shuttle solution crystal growth experiments are also detailed in this TM and the complexity of solution growth experiments to grow crystals in space are also discussed. These happen to be some of the early experiments performed in space, and various lessons learned are described. A brief discussion of protein crystal growth that shares basic principles of the solution growth technique is given, along with some flight hardware information for growth in microgravity.

  8. Synthesis of titanium sapphire by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Morpeth, L.D.; McCallum, J.C.; Nugent, K.W. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1998-06-01

    Since laser action was first demonstrated in titanium sapphire (Ti:Al{sub 2}O{sub 3}) in 1982, it has become the most widely used tunable solid state laser source. The development of a titanium sapphire laser in a waveguide geometry would yield an elegant, compact, versatile and highly tunable light source useful for applications in many areas including optical telecommunications. We are investigating whether ion implantation techniques can be utilised to produce suitable crystal quality and waveguide geometry for fabrication of a Ti:Al{sub 2}O{sub 3} waveguide laser. The implantation of Ti and O ions into c-axis oriented {alpha}-Al{sub 2}O{sub 3} followed by subsequent thermal annealing under various conditions has been investigated as a means of forming the waveguide and optimising the fraction of Ti ions that have the correct oxidation state required for laser operation. A Raman Microprobe is being used to investigate the photo-luminescence associated with Ti{sup 3+} ion. Initial photoluminescence measurements of ion implanted samples are encouraging and reveal a broad luminescence profile over a range of {approx} .6 to .9 {mu}m, similar to that expected from Ti{sup 3+}. Rutherford Backscattering and Ion Channelling analysis have been used to study the crystal structure of the samples following implantation and annealing. This enables optimisation of the implantation parameters and annealing conditions to minimise defect levels which would otherwise limit the ability of light to propagate in the Ti:Al{sub 2O}3 waveguide. (authors). 8 refs., 3 figs.

  9. VO{sub 2} (A): Reinvestigation of crystal structure, phase transition and crystal growth mechanisms

    Energy Technology Data Exchange (ETDEWEB)

    Rao Popuri, Srinivasa [ICMCB, CNRS, UPR 9048, F-33608 Pessac (France); University of Bordeaux, ICMCB, UPR 9048, F-33608 Pessac (France); National Institute for Research and Development in Electrochemistry and Condensed Matter, Timisoara, Plautius Andronescu Str. No. 1, 300224 Timisoara (Romania); Artemenko, Alla [ICMCB, CNRS, UPR 9048, F-33608 Pessac (France); University of Bordeaux, ICMCB, UPR 9048, F-33608 Pessac (France); Labrugere, Christine [CeCaMA, University of Bordeaux 1, ICMCB, 87 Avenue du Dr. A. Schweitzer, F-33608 Pessac (France); Miclau, Marinela [National Institute for Research and Development in Electrochemistry and Condensed Matter, Timisoara, Plautius Andronescu Str. No. 1, 300224 Timisoara (Romania); Villesuzanne, Antoine [ICMCB, CNRS, UPR 9048, F-33608 Pessac (France); University of Bordeaux, ICMCB, UPR 9048, F-33608 Pessac (France); Pollet, Michaël, E-mail: pollet@icmcb-bordeaux.cnrs.fr [ICMCB, CNRS, UPR 9048, F-33608 Pessac (France); University of Bordeaux, ICMCB, UPR 9048, F-33608 Pessac (France)

    2014-05-01

    Well crystallized VO{sub 2} (A) microrods were grown via a single step hydrothermal reaction in the presence of V{sub 2}O{sub 5} and oxalic acid. With the advantage of high crystalline samples, we propose P4/ncc as an appropriate space group at room temperature. From morphological studies, we found that the oriented attachment and layer by layer growth mechanisms are responsible for the formation of VO{sub 2} (A) micro rods. The structural and electronic transitions in VO{sub 2} (A) are strongly first order in nature, and a marked difference between the structural transition temperatures and electronic transitions temperature was evidenced. The reversible intra- (LTP-A to HTP-A) and irreversible inter- (HTP-A to VO{sub 2} (M1)) structural phase transformations were studied by in-situ powder X-ray diffraction. Attempts to increase the size of the VO{sub 2} (A) microrods are presented and the possible formation steps for the flower-like morphologies of VO{sub 2} (M1) are described. - Graphical abstract: Using a single step and template free hydrothermal synthesis, well crystallized VO{sub 2} (A) microrods were prepared and the P4/ncc space group was assigned to the room temperature crystal structure. Reversible and irreversible phase transitions among different VO{sub 2} polymorphs were identified and their progressive nature was highlighted. Attempts to increase the microrods size, involving layer by layer formation mechanisms, are presented. - Highlights: • Highly crystallized VO{sub 2} (A) microrods were grown via a single step hydrothermal process. • The P4/ncc space group was determined for VO{sub 2} (A) at room temperature. • The electronic structure and progressive nature of the structural phase transition were investigated. • A weak coupling between structural and electronic phase transitions was identified. • Different crystallite morphologies were discussed in relation with growth mechanisms.

  10. SiGe crystal growth aboard the international space station

    Science.gov (United States)

    Kinoshita, K.; Arai, Y.; Tsukada, T.; Inatomi, Y.; Miyata, H.; Tanaka, R.

    2015-05-01

    A silicon germanium mixed crystal Si1-xGex (x~0.5) 10 mm in diameter and 9.2 mm in length was grown by the traveling liquidus-zone (TLZ) method in microgravity by suppressing convection in a melt. Ge concentration of 49.8±2.5 at% has been established for the whole of the grown crystal. Compared with the former space experiment, concentration variation in the axial direction increased from ±1.5 at% to ±2.5 at% although average Ge concentration reached to nearly 50 at%. Excellent radial Ge compositional uniformity 52±0.5 at% was established in the region of 7-9 mm growth length, where axial compositional uniformity was also excellent. The single crystalline region is about 5 mm in length. The interface shape change from convex to concave is implied from both experimental results and numerical analysis. The possible cause of increase in concentration variation and interface shape change and its relation to the two-dimensional growth model are discussed.

  11. Growth of BPO4 single crystals from Li2Mo3O10 flux

    Science.gov (United States)

    Xu, Guogang; Li, Jing; Han, Shujuan; Guo, Yongjie; Wang, Jiyang

    2010-12-01

    Transparent single crystal of BPO4 with a typical sizes of 5 × 7 × 9 mm3 have been grown by the top-seeded solution growth (TSSG) slow-cooling method using Li2Mo3O10 as the flux. X-ray powder diffraction result shows that the as-grown crystal was well crystallized and indexed in a tetragonal system. The processing parameters and the effects of the flux on the crystal growth were investigated.

  12. Structures and growth mechanisms of poly-(3-hydroxybutyrate) (PHB) crystallized from solution and thin melt film

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    The spherulitic structures and morphologies of poly-(3-hydroxybutyrate) (PHB) crystallized from a so- lution and a thin melt film were investigated in this study. The formation mechanisms of banded spherulites under different crystallization conditions are proposed. It was found that the formation of banded spherulites was caused by the rhythmic crystal growth of the spherulites and lamellar twisting growth for the polymer crystallization from a thin melt film and a solution, respectively.

  13. Study on Characteristics of Crystal Growth of NdFeB Cast Alloys

    Institute of Scientific and Technical Information of China (English)

    李波; 郭炳麟; 王东玲; 刘涛; 喻晓军

    2004-01-01

    The characteristic of crystal growth of NdFeB cast alloys was studied.It is found that the crystal growth orientation of conventional ingots is along or .As the cooling rate increases,the crystallization orientation changes from a axis to c axis,along which the grain is easy to be magnetized.Meanwhile,by analyzing the change of crystallization orientation,the influence on the property of magnets was discussed.

  14. Effect of gallbladder hypomotility on cholesterol crystallization and growth in CCK-deficient mice.

    Science.gov (United States)

    Wang, Helen H; Portincasa, Piero; Liu, Min; Tso, Patrick; Samuelson, Linda C; Wang, David Q-H

    2010-02-01

    We investigated the effect of gallbladder hypomotility on cholesterol crystallization and growth during the early stage of gallstone formation in CCK knockout mice. Contrary to wild-type mice, fasting gallbladder volumes were enlarged and the response of gallbladder emptying to a high-fat meal was impaired in knockout mice on chow or the lithogenic diet. In the lithogenic state, large amounts of mucin gel and liquid crystals as well as arc-like and tubular crystals formed first, followed by rapid formation of classic parallelogram-shaped cholesterol monohydrate crystals in knockout mice. Furthermore, three patterns of crystal growth habits were observed: proportional enlargement, spiral dislocation growth, and twin crystal growth, all enlarging solid cholesterol crystals. At day 15 on the lithogenic diet, 75% of knockout mice formed gallstones. However, wild-type mice formed very little mucin gel, liquid, and solid crystals, and gallstones were not observed. We conclude that lack of CCK induces gallbladder hypomotility that prolongs the residence time of excess cholesterol in the gallbladder, leading to rapid crystallization and precipitation of solid cholesterol crystals. Moreover, during the early stage of gallstone formation, there are two pathways of liquid and polymorph anhydrous crystals evolving to monohydrate crystals and three modes for cholesterol crystal growth.

  15. Growth of Bi-2212 single crystals by a horizontal Bridgman method using different oxygen pressure

    Energy Technology Data Exchange (ETDEWEB)

    Fujiwara, M.; Makino, T.; Nakabayashi, T. [Department of Electrical and Electronic Engineering, Tottori University, Koyama-Minami, Tottori 680-8552 (Japan); Tanaka, H. [Yonago National College of Technology, 4448 Hikona Yonago, Tottori 683-8502 (Japan); Kinoshita, K., E-mail: kinoshita@ele.tottori-u.ac.j [Department of Electrical and Electronic Engineering, Tottori University, Koyama-Minami, Tottori 680-8552 (Japan); Kishida, S. [Department of Electrical and Electronic Engineering, Tottori University, Koyama-Minami, Tottori 680-8552 (Japan)

    2009-10-15

    We compared the crystallinity of the Bi-2212 single crystals grown by the horizontal Bridgman (HB) method with those grown by the vertical Bridgman (VB) method in terms of resistivity, rho. It was clarified that crystals far inside the ingot grown by HB method showed the equivalent crystallinity to crystals grown by VB method, whereas crystals near the surface of the ingot grown by HB method showed the similar crystallinity to crystals grown by TSFZ method, which is sensitive to the growth atmosphere.

  16. Effect of Crystal Growth Direction on Domain Structure of Mn-Doped (Na,K)NbO3 Crystal

    Science.gov (United States)

    Tsuchida, Kohei; Kakimoto, Ken-ichi; Kagomiya, Isao

    2013-09-01

    Single crystals of (Na0.55K0.45)(Nb0.995Mn0.005)O3 have been grown by a floating zone method in N2 and decompression atmosphere to avoid alkaline metal volatilization on the SrTiO3 material base. The variation of their ferroelectric domain structure and the chemical composition of the grown crystal in the growth direction were evaluated. In the crystal grown in N2 atmosphere, the Na and K are not distributed homogeneously. In addition, the phase transition temperature TC and TO-T showed different values between the grown crystal and raw material. By using laser scanning confocal microscope, the domain structures of the grown crystal revealed random patterns in the initial growth stage and lamellar patterns in the progressing crystal growth. In decompression atmosphere, the TC and TO-T values of the grown crystal were similar to those of the raw material and the domain structures showed a constant domain size. The electrical property of the crystal became stable and the domain structure was easily switched against applied electrical field because the oriented lamellar domain was created during cooling of the crystal.

  17. EFFECT OF SODIUM DODECYLBENZENESULFONIC ACID (SDBS ON THE GROWTH RATE AND MORPHOLOGY OF BORAX CRYSTAL

    Directory of Open Access Journals (Sweden)

    Suharso Suharso

    2010-06-01

    Full Text Available An investigation of the effect of sodium dodecylbenzenesulfonic acid (SDBS on both growth rate and morphology of borax crystal has been carried out.  This experiment was carried out at temperature of 25 °C and relative supersaturation of 0.21 and 0.74 under in situ cell optical microscopy method.  The result shows that SDBS inhibits the growth rate and changes the morphology of borax crystal.   Keywords: Borax; growth rate; crystallization, SDBS

  18. EFFECT OF SODIUM DODECYLBENZENESULFONIC ACID (SDBS) ON THE GROWTH RATE AND MORPHOLOGY OF BORAX CRYSTAL

    OpenAIRE

    Suharso, Suharso

    2010-01-01

    An investigation of the effect of sodium dodecylbenzenesulfonic acid (SDBS) on both growth rate and morphology of borax crystal has been carried out.  This experiment was carried out at temperature of 25 °C and relative supersaturation of 0.21 and 0.74 under in situ cell optical microscopy method.  The result shows that SDBS inhibits the growth rate and changes the morphology of borax crystal.   Keywords: Borax; growth rate; crystallization, SDBS

  19. Crystal growth, structural and thermal studies of amino acids admixtured L-arginine phosphate monohydrate single crystals

    Science.gov (United States)

    Anandan, P.; Saravanan, T.; Parthipan, G.; Kumar, R. Mohan; Bhagavannarayana, G.; Ravi, G.; Jayavel, R.

    2011-05-01

    To study the improved characteristics of L-arginine phosphate monohydrate (LAP) crystals, amino acids mixed LAP crystals have been grown by slow cooling method. Amino acids like glycine, L-alanine, and L-valine have been selected for doping. Optical quality bulk crystals have been harvested after a typical growth period of about twenty days. The effect of amino acids in the crystal lattice and molecular vibrational frequencies of various functional groups in the crystals have been studied using X-ray powder diffraction and Fourier Transform infrared (FTIR) analyses respectively. Thermal behavior of the amino acids mixed LAP crystals have been studied from the TG and DTG analyses. High-resolution X-ray diffraction studies have been carried out to find the crystalline nature. Optical transmission studies have been carried out by UV-vis spectrophotometer. The cut off wavelength is below 240 nm for the grown crystals.

  20. Confined Crystal Growth in Space. Deterministic vs Stochastic Vibroconvective Effects

    Science.gov (United States)

    Ruiz, Xavier; Bitlloch, Pau; Ramirez-Piscina, Laureano; Casademunt, Jaume

    The analysis of the correlations between characteristics of the acceleration environment and the quality of the crystalline materials grown in microgravity remains an open and interesting question. Acceleration disturbances in space environments usually give rise to effective gravity pulses, gravity pulse trains of finite duration, quasi-steady accelerations or g-jitters. To quantify these disturbances, deterministic translational plane polarized signals have largely been used in the literature [1]. In the present work, we take an alternative approach which models g-jitters in terms of a stochastic process in the form of the so-called narrow-band noise, which is designed to capture the main statistical properties of realistic g-jitters. In particular we compare their effects so single-frequency disturbances. The crystalline quality has been characterized, following previous analyses, in terms of two parameters, the longitudinal and the radial segregation coefficients. The first one averages transversally the dopant distribution, providing continuous longitudinal information of the degree of segregation along the growth process. The radial segregation characterizes the degree of lateral non-uniformity of the dopant in the solid-liquid interface at each instant of growth. In order to complete the description, and because the heat flux fluctuations at the interface have a direct impact on the crystal growth quality -growth striations -the time dependence of a Nusselt number associated to the growing interface has also been monitored. For realistic g-jitters acting orthogonally to the thermal gradient, the longitudinal segregation remains practically unperturbed in all simulated cases. Also, the Nusselt number is not significantly affected by the noise. On the other hand, radial segregation, despite its low magnitude, exhibits a peculiar low-frequency response in all realizations. [1] X. Ruiz, "Modelling of the influence of residual gravity on the segregation in

  1. Epitaxial growth and improved electronic properties of (Bi{sub 1−x}Sb{sub x}){sub 2}Te{sub 3} thin films grown on sapphire (0001) substrates: The influence of Sb content and the annealing

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Wei; Stoica, Vladimir; Chi, Hang; Endicott, Lynn; Uher, Ctirad, E-mail: cuher@umich.edu

    2015-10-25

    In this research, we report on the epitaxial growth of basal plane-oriented (Bi{sub 1−x}Sb{sub x}){sub 2}Te{sub 3} films (0 ≤ x ≤ 1) on sapphire (0001) substrates through Molecular Beam Epitaxy (MBE) and demonstrate the influence of composition, crystal orientation and post-annealing process on their electronic properties. The as-grown (Bi{sub 1−x}Sb{sub x}){sub 2}Te{sub 3} films change gradually from a strong n-type to a strong p-type conduction when the Sb content increases from 0 to 1, which is attributed to the charge carrier compensation between the n-type Te{sub Bi} and p-type Sb{sub Te} antisite defects. The crossover between the n- and p-type conduction is found for x between 0.6 and 0.7. We also find that post-annealing (at 580 K) is beneficial for the electronic properties of the p-type (Bi{sub 1−x}Sb{sub x}){sub 2}Te{sub 3} films: they attain improved carrier mobility and significantly increased hole density. However, annealing plays a negative role in the electronic properties of the n-type structures leading to an enhanced resistivity as well as a reduced Seebeck coefficient. The most plausible explanation for such annealing effects is an introduction of p-type defects in both the n-type and p-type (Bi{sub 1−x}Sb{sub x}){sub 2}Te{sub 3} films. The as-grown Bi{sub 2}Te{sub 3} film possesses the largest thermoelectric power factor among all n-type films, reaching 4.1 and 2.5 mWm{sup −1} K{sup −2} at 122 and 300 K respectively, due to the high carrier mobility and proper carrier doping. In contrast, a remarkably improved power factor in p-type (Bi{sub 1−x}Sb{sub x}){sub 2}Te{sub 3} films is achieved upon annealing at 580 K for 1 h. The highest power factor in p-type Bi{sub 0.6}Sb{sub 1.4}Te{sub 3} and Sb{sub 2}Te{sub 3} films is obtained at around 150 K and it increases from 0.2 mWm{sup −1} K{sup −2} (Bi{sub 0.6}Sb{sub 1.4}Te{sub 3}) and 1.8 mWm{sup −1} K{sup −2} (Sb{sub 2}Te{sub 3}) for the as-grown films to 3.5 mWm{sup −1} K

  2. The Durability of Various Crucible Materials for Aluminum Nitride Crystal growth by Sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Liu,B.; Edgar, J.; Gu, Z.; Zhuang, D.; Raghothamachar, B.; Dudley, M.; Sarua, A.; Kuball, M.; Meyer, H.

    2004-01-01

    Producing high purity aluminum nitride crystals by the sublimation-recondensation technique is difficult due to the inherently reactive crystal growth environment, normally at temperature in excess of 2100 C. The durability of the furnace fixture materials (crucibles, retorts, etc.) at such a high temperature remains a critical problem. In the present study, the suitability of several refractory materials for AlN crystal growth is investigated, including tantalum carbide, niobium carbide, tungsten, graphite, and hot-pressed boron nitride. The thermal and chemical properties and performance of these materials in inert gas, as well as under AlN crystal growth conditions are discussed. TaC and NbC are the most stable crucible materials with very low elemental vapor pressures in the crystal growth system. Compared with refractory material coated graphite crucibles, HPBN crucible is better for AlN self-seeded growth, as crystals tend to nucleate in thin colorless platelets with low dislocation density.

  3. The growth of Nd:CaWO4 single crystals

    Directory of Open Access Journals (Sweden)

    ALEKSANDAR GOLUBOVIC

    2003-12-01

    Full Text Available CaWO4 doped with 0.8 % at. Nd (Nd:CaWO4 single crystals were grown from the melt in air by the Czochralski technique. The critical diameter dc = 1.0 cm and the critical rate of rotation wc = 30 rpm were calculated from hydrodynamic equations for buoyancy-driven and forced convection. The rate of crystal growth was experimentally obtained to be 6.7 mm/h. For chemical polishing, a solution of 1 part saturated chromic acid (CrO3 in water and 3 parts conc. H3PO4 (85 % at 433 K with an exposure time of 2 h was found to be adequate. A mixture of 1 part concentrated HF and 2 parts chromic acid at room temperature after exposure for 30 min was found to be a suitable etching solution. The lattice parameters a = 0.52404 (6 nm, c = 1.1362 (6 nm and V0 = 0.312 (2 nm3 were determined by X-ray powder diffraction. The obtained results are discussed and compared with published data.

  4. Preparation of anhydrous lanthanum bromide for scintillation crystal growth

    Institute of Scientific and Technical Information of China (English)

    ZHANG Tong; LI Hongwei; ZHAO Chunlei; YU Jinqiu; HU Yunsheng; CUI Lei; HE Huaqiang

    2012-01-01

    This paper reported an efficient and economical method for preparation of anhydrous LaBr3 for scintillation crystal growth.High purity anhydrous LaBr3 powders in large quantities were successfully obtained by stepped dehydration of LaBr3·7H2O using NH4Br as additive.Experiments revealed that adding proper amount of NH4Br could effectively restrain the hydrolysis of LaBr3 during dehydration and thus decreased the yield of deleterious impurity of LaOBr.Optimum preparation conditions,including the amount of NH4Br in use,the dehydration temperature and atmosphere,were investigated by DTA/TG and water/oxygen analysis.The Raman characterization of the as-prepared anhydrous LaBr3 was also presented.

  5. Growth of single-crystal YAG fiber optics.

    Science.gov (United States)

    Nie, Craig D; Bera, Subhabrata; Harrington, James A

    2016-07-11

    Single-crystal YAG (Y3Al5O12) fibers have been grown by the laser heated pedestal growth technique with losses as low as 0.3 dB/m at 1.06 μm. These YAG fibers are as long as about 60 cm with diameters around 330 μm. The early fibers were grown from unoriented YAG seed fibers and these fibers exhibited facet steps or ridges on the surface of the fiber. However, recently we have grown fibers using an oriented seed to grow step-free fibers. Scattering losses made on the fibers indicate that the scattering losses are equal to about 30% of the total loss.

  6. High Speed Crystal Growth by Q-switched Laser Melting

    Science.gov (United States)

    Cullis, A. G.

    1984-01-01

    The modification of the structural and electrical properties of semiconductors short radiation pulses obtained from Q-switched lasers is described. These modifications are accomplished by high heating and cooling rates. This processing revealed novel crystal growth and high speed resolidification phenomena. The behavior of semiconductor Si is analyzed. The annealing process typically employs short pulses of radiation in or near the visible region of the spectrum. The Q-switched ruby and Nd-YAG lasers are commonly used and these are sometimes mode locked to reduce the pulse length still further. Material to be annealed can be processed with a single large area radiation spot. Alternatively, a small radiation spot size can be used and a large sample area is covered by overlapping irradiated regions.

  7. Frequency-doubled diode laser for direct pumping of Ti:sapphire lasers

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2012-01-01

    A single-pass frequency doubled high-power tapered diode laser emitting nearly 1.3 W of green light suitable for direct pumping of Ti:sapphire lasers generating ultrashort pulses is demonstrated. The pump efficiencies reached 75 % of the values achieved with a commercial solid-state pump laser....... However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20...... fs are measured. These results open the opportunity of establishing diode laser pumped Ti:sapphire lasers for e.g. biophotonic applications like retinal optical coherence tomography or pumping of photonic crystal fibers for CARS microscopy....

  8. In-Situ Crystallization of a Lithium Disilicate Glass--Effect of Pressure on Crystal Growth Rate

    Science.gov (United States)

    Fuss, T.; Ray, C. S.; Lesher, C. E.; Day, D. E.

    2006-01-01

    Crystallization of a Li2O.2SiO2 (LS2) glass subjected to a uniform hydrostatic pressure of 4.5 GPa and 6 GPa was investigated up to a temperature of 750 C. The density of the compressed glass is about 2% greater at 4.5 GPa than at 1 atm and, depending upon the processing temperature, up to 10% greater at 6 GPa. Crystal growth rates investigated as a function of temperature and pressure show that lithium disilicate crystal growth is an order of magnitude slower at 4.5 GPa than 1 atm resulting in a shift of +45 C (plus or minus 10 C) in the growth rate curve at high pressure compared to 1 atm condition. At 6 GPa lithium disilicate crystallization is suppressed entirely, while a new high pressure lithium metasilicate crystallizes at temperatures 95 C (plus or minus 10 C) higher than those reported for lithium disilicate crystallization at 1 atm. The decrease in crystal growth rate with increasing pressure for lithium disilicate glass up to 750 C is related to an increase in viscosity with pressure associated with fundamental changes in glass structure accommodating densification.

  9. Room Temperature Experiments with a Macroscopic Sapphire Mechanical Oscillator

    Science.gov (United States)

    Bourhill, Jeremy; Ivanov, Eugene; Tobar, Micahel

    2015-03-01

    We present initial results from a number of experiments conducted on a 0.53 kg sapphire ``dumbbell'' crystal. Mechanical motion of the crystal structure alters the dimensions of the crystal, and the induced strain changes the permittivity. These two effects frequency modulate resonant microwave whispering gallery modes, simultaneously excited within the crystal. A novel microwave readout system is described allowing extremely low noise measurements of this frequency modulation with a phase noise floor of -160 dBc/Hz at 100 kHz, near our modes of interest. Fine-tuning of the crystal's suspension have allowed for the optimisation of mechanical Q-factors in preparation for cryogenic experiments, with a value of 8 x 107 achieved so far. Finally, results are presented that demonstrate the excitation of mechanical modes via radiation pressure force. These are all important steps towards the overall goal of the experiment; to cool a macroscopic device to the quantum ground state.

  10. Synthesis, crystal growth, solubility, structural, optical, dielectric and microhardness studies of Benzotriazole-4-hydroxybenzoic acid single crystals

    Science.gov (United States)

    Silambarasan, A.; Krishna Kumar, M.; Thirunavukkarasu, A.; Mohan Kumar, R.; Umarani, P. R.

    2015-06-01

    Organic Benzotriazole-4-hydroxybenzoic acid (BHBA), a novel second-order nonlinear optical single crystal was grown by solution growth method. The solubility and nucleation studies were performed for BHBA crystal at different temperatures 30, 35, 40 45 and 50 °C. Single crystal X-ray diffraction study reveals that the BHBA belongs to Pna21 space group of orthorhombic crystal system. The crystal perfection of BHBA was examined from powder and high resolution X-ray diffraction analysis. UV-visible and photoluminescence spectra were recorded to study its transmittance and excitation, emission behaviors respectively. Kurtz powder second harmonic generation test reveals that, the frequency conversion efficiency of BHBA is 3.7 times higher than that of potassium dihydrogen phosphate (KDP) crystal. The dielectric constant and dielectric loss values were estimated for BHBA crystal at various temperatures and frequencies. The mechanical property of BHBA crystal was studied on (110), (010) and (012) planes by using Vicker's microhardness test. The chemical etching study was performed on (012) facet of BHBA crystal to analyze its growth feature.

  11. Crystal growth iron based pnictide compounds; Kristallzuechtung eisenbasierter Pniktidverbindungen

    Energy Technology Data Exchange (ETDEWEB)

    Nacke, Claudia

    2012-11-15

    The present work is concerned with selected crystal growth method for producing iron-based superconductors. The first part of this work introduces significant results of the crystal growth of BaFe{sub 2}As{sub 2} and the cobalt-substituted compound Ba(Fe{sub 1-x}Co{sub x}){sub 2}As{sub 2} with x{sub Nom} = 0.025, 0.05, 0.07, 0.10 and 0.20. For this purpose a test procedure for the vertical Bridgman method was developed. The second part of this work contains substantial results for growing a crystal of LiFeAs and the nickel-substituted compound Li{sub 1-δ}Fe{sub 1-x}Ni{sub x}As with x{sub Nom} = 0.015, 0.025, 0.05, 0.06, 0.075 and 0.10. For this purpose a test procedure for the melt flow process has been developed successfully. [German] Die vorliegende Arbeit befasst sich mit ausgewaehlten Kristallzuechtungsverfahren zur Herstellung eisenbasierter Supraleiter. Der erste Teil dieser Arbeit fuehrt wesentliche Ergebnisse der Kristallzuechtung von BaFe{sub 2}As{sub 2} sowie der Cobalt-substituierten Verbindung Ba(Fe{sub 1-x}Co{sub x}){sub 2}As{sub 2} mit x{sub Nom} =0.025, 0.05, 0.07, 0.10 und 0.20 auf. Hierzu wurde eine Versuchsdurchfuehrung fuer das vertikale Bridgman-Verfahren konzipiert, mit welcher erfolgreich Kristalle dieser Zusammensetzungen gezuechtet wurden. Der zweite Teil dieser Arbeit enthaelt wesentliche Ergebnisse zur Kristallzuechtung von LiFeAs sowie der Nickel-substituierten Verbindung Li{sub 1-δ}Fe{sub 1-x}Ni{sub x}As mit x{sub Nom} = 0.015, 0.025, 0.05, 0.06, 0.075 und 0.10. Hierfuer wurde erfolgreich eine Versuchsdurchfuehrung fuer das Schmelzfluss-Verfahren entwickelt.

  12. Crystal growth and scintillation properties of undoped and Ce3+-doped GdI3 crystals

    Science.gov (United States)

    Ye, Le; Li, Huanying; Wang, Chao; Shi, Jian; Chen, Xiaofeng; Wang, Zhongqing; Huang, Yuefeng; Xu, Jiayue; Ren, Guohao

    2017-02-01

    The growth and scintillation properties of undoped and Ce3+-doped GdI3 crystals were reported in this paper. These GdI3:χ%Ce (χ = 0, 1, 2) crystals were grown by the vertical Bridgman growth technique in evacuated quartz crucibles. X-ray excited optical luminescence spectra of GdI3:Ce exhibit a broad emission band (450 nm-650 nm) peaking at 520 nm corresponding to 5d1→4f1 transition of Ce3+ while the undoped GdI3 crystal consists of a broad band (400 nm-600 nm) and several sharp lines peaking at 462 nm, 482 nm, 492 nm, 549 nm, 579 nm owing to the impurities ions and defects. The excitation spectra of Ce3+ doped GdI3 consist of two broad bands between 300 nm and 500 nm corresponding to 4f1→5d1 absorption of Ce3+. The other absorption peaking at 262 nm in the spectrum of GdI3:2%Ce is assigned to band-to-band exciton transition. The excitation spectrum of undoped GdI3 contains a flat absorption band from 330 to 370 nm and a broad band between 390 and 450 nm peaking at 414 nm corresponding to the absorption of the unintentionally doped Ce3+, Dy3+, Ho3+ impurities and other defects. The emission spectrum of undoped GdI3 under 332 nm excitation has the identical line peaks with the spectrum measured under X-ray excitation. The emission spectra of GdI3:2%Ce and GdI3:1%Ce show a broad band in the range of 450-750 nm with the maximum at 550 nm corresponding to 5d1→4f1 transitions of Ce3+ ion. The GdI3, GdI3:1%Ce and GdI3:2%Ce show fast principle decay time constant 73 ns, 69 ns and 58 ns respectively, besides, the undoped also shows a slow decay constant 325 ns which doesn't appear in Ce3+-doped GdI3 crystal. The energy resolutions of GdI3:χ%Ce (χ = 1, 2) measured at 662 KeV are about 3%-5% and the undoped GdI3 is 13.3%.

  13. On geological interpretations of crystal size distributions: Constant vs. proportionate growth

    Science.gov (United States)

    Eberl, D.D.; Kile, D.E.; Drits, V.A.

    2002-01-01

    Geological interpretations of crystal size distributions (CSDs) depend on understanding the crystal growth laws that generated the distributions. Most descriptions of crystal growth, including a population-balance modeling equation that is widely used in petrology, assume that crystal growth rates at any particular time are identical for all crystals, and, therefore, independent of crystal size. This type of growth under constant conditions can be modeled by adding a constant length to the diameter of each crystal for each time step. This growth equation is unlikely to be correct for most mineral systems because it neither generates nor maintains the shapes of lognormal CSDs, which are among the most common types of CSDs observed in rocks. In an alternative approach, size-dependent (proportionate) growth is modeled approximately by multiplying the size of each crystal by a factor, an operation that maintains CSD shape and variance, and which is in accord with calcite growth experiments. The latter growth law can be obtained during supply controlled growth using a modified version of the Law of Proportionate Effect (LPE), an equation that simulates the reaction path followed by a CSD shape as mean size increases.

  14. Predicting crystal growth via a unified kinetic three-dimensional partition model.

    Science.gov (United States)

    Anderson, Michael W; Gebbie-Rayet, James T; Hill, Adam R; Farida, Nani; Attfield, Martin P; Cubillas, Pablo; Blatov, Vladislav A; Proserpio, Davide M; Akporiaye, Duncan; Arstad, Bjørnar; Gale, Julian D

    2017-04-03

    Understanding and predicting crystal growth is fundamental to the control of functionality in modern materials. Despite investigations for more than one hundred years, it is only recently that the molecular intricacies of these processes have been revealed by scanning probe microscopy. To organize and understand this large amount of new information, new rules for crystal growth need to be developed and tested. However, because of the complexity and variety of different crystal systems, attempts to understand crystal growth in detail have so far relied on developing models that are usually applicable to only one system. Such models cannot be used to achieve the wide scope of understanding that is required to create a unified model across crystal types and crystal structures. Here we describe a general approach to understanding and, in theory, predicting the growth of a wide range of crystal types, including the incorporation of defect structures, by simultaneous molecular-scale simulation of crystal habit and surface topology using a unified kinetic three-dimensional partition model. This entails dividing the structure into 'natural tiles' or Voronoi polyhedra that are metastable and, consequently, temporally persistent. As such, these units are then suitable for re-construction of the crystal via a Monte Carlo algorithm. We demonstrate our approach by predicting the crystal growth of a diverse set of crystal types, including zeolites, metal-organic frameworks, calcite, urea and l-cystine.

  15. Predicting crystal growth via a unified kinetic three-dimensional partition model

    Science.gov (United States)

    Anderson, Michael W.; Gebbie-Rayet, James T.; Hill, Adam R.; Farida, Nani; Attfield, Martin P.; Cubillas, Pablo; Blatov, Vladislav A.; Proserpio, Davide M.; Akporiaye, Duncan; Arstad, Bjørnar; Gale, Julian D.

    2017-04-01

    Understanding and predicting crystal growth is fundamental to the control of functionality in modern materials. Despite investigations for more than one hundred years, it is only recently that the molecular intricacies of these processes have been revealed by scanning probe microscopy. To organize and understand this large amount of new information, new rules for crystal growth need to be developed and tested. However, because of the complexity and variety of different crystal systems, attempts to understand crystal growth in detail have so far relied on developing models that are usually applicable to only one system. Such models cannot be used to achieve the wide scope of understanding that is required to create a unified model across crystal types and crystal structures. Here we describe a general approach to understanding and, in theory, predicting the growth of a wide range of crystal types, including the incorporation of defect structures, by simultaneous molecular-scale simulation of crystal habit and surface topology using a unified kinetic three-dimensional partition model. This entails dividing the structure into ‘natural tiles’ or Voronoi polyhedra that are metastable and, consequently, temporally persistent. As such, these units are then suitable for re-construction of the crystal via a Monte Carlo algorithm. We demonstrate our approach by predicting the crystal growth of a diverse set of crystal types, including zeolites, metal-organic frameworks, calcite, urea and L-cystine.

  16. Size effects on void growth in single crystals with distributed voids

    DEFF Research Database (Denmark)

    Borg, Ulrik; Niordson, Christian Frithiof; Kysar, J.W.

    2008-01-01

    The effect of void size on void growth in single crystals with uniformly distributed cylindrical voids is studied numerically using a finite deformation strain gradient crystal plasticity theory with an intrinsic length parameter. A plane strain cell model is analyzed for a single crystal...

  17. Formation and growth mechanism of TiC crystal in TiCp/Ti composites

    Institute of Scientific and Technical Information of China (English)

    金云学; 王宏伟; 曾松岩; 张二林

    2002-01-01

    Ti-C and Ti-Al-C alloys were prepared using gravity and directional solidification processes. Morphologies of TiC crystal were investigated by using SEM, XRD and EDX. Also, the formation and growth mechanism of TiC crystal have been analyzed on the basis of coordination polyhedron growth unit theory. During solidification of titanium alloys, the coordination polyhedron growth unit is TiC6. TiC6 growth units stack in a linking mode of edge to edge and form octahedral TiC crystal with {111} planes as present faces. Although the growing geometry of TiC crystal is decided by its lattice structure, the final morphology of TiC crystal depends on the effects of its growth environment. In solute concentration distribution, the super-saturation of C or TiC6 at the corners of octahedral TiC crystal is much higher than that of edges and faces of octahedral TiC crystal. At these corners the driving force for crystal growth is greater and the interface is instable which contribute to quick stacking rate of growth units at these corners and result in secondary dendrite arms along TiC crystallographic 〈100〉 directions. TiC crystal finally grows to be dendrites.

  18. Large single crystal growth of MnWO4-type materials from high-temperature solutions

    Science.gov (United States)

    Gattermann, U.; Röska, B.; Paulmann, C.; Park, S.-H.

    2016-11-01

    A simple high-temperature growth apparatus was constructed to obtain large crystals of chemically gradient (In, Na)-doped MnWO4solid-solutions. This paper presents the crystal growth and characterisation of both MnWO4and epitaxially grown (In, Na): MnWO4crystals on MnWO4. These large monolithic crystals were made in two steps: A MnWO4 crystal was grown in the crystallographic main direction [001] applying the Czochralski method, followed by the top seeded growth of (In, Na): MnWO4 solid-solutions with an oriented seed crystal of MnWO4. Such a monolithic crystal will serve to fundamental investigation of coupling properties at boundaries between various multiferroic MnWO4-typesolid-solutions.

  19. Sidebranching in the Dendritic Crystal Growth of Ammonium Chloride

    Science.gov (United States)

    Dougherty, Andrew

    2012-02-01

    We report measurements of the dendritic crystal growth of NH4Cl from supersaturated aqueous solution at small supersaturations. Sidebranch growth in this regime is challenging to model well, and the origin of the sidebranches is not fully understood. The early detection of sidebranches requires measurements of small deviations from the smooth steady state shape, but that shape is not well known at the intermediate distances relevant for sidebranch measurements. One model is that sidebranches result from the selective amplification of microscopic noise. We compare measurements of the sidebranch envelope with predictions of the noise-induced sidebranching model of Gonz'alez-Cinca, Ram'irez-Piscina, Casademunt, and Hern'andez-Machado [Phys Rev. E, 63, 051602 (2001)]. We find that the measured amplitude is somewhat larger than predicted, and the shape of the sidebranch envelope is also different. A second model is that sidebranches result from small oscillations of the tip. We have observed no such oscillations, but very small ones can not be ruled out. No measurement of the tip region can be completely free of contamination from early sidebranches, so it can be challenging to distinguish between an oscillating tip and a smooth tip with sidebranches starting nearby.

  20. Study of growth of single crystal ribbon in space

    Science.gov (United States)

    Wood, V. E.; Markworth, A. J.

    1975-01-01

    The technical feasibility is studied of growing single-crystal silicon ribbon in the space environment. Procedures are described for calculating the electromagnetic fields produced in a silicon ribbon by an rf shaping coil. The forces on the ribbon and the degree of shaping to be expected are determined. The expected steady-state temperature distribution in the ribbon is calculated in the one-dimensional approximation. Calculations on simplified models indicate, that lack of flatness of the shaped ribbon and excessive heating of the melt by the eddy currents induced by the shaping fields may pose problems. An analysis of the relative effects of various kinds of forces other than electromagnetic showed that in the space environment capillarity forces would dominate, and that the shape of the melt is thus principally determined by the shape of any solids with which it comes in contact. This suggests that ribbon may be produced simply by drawing between parallel wires. A concept is developed for a process of off-angle growth, in which the ribbon is pulled at an angle to the solidification front. Such a process promises to offer increased growth rate, better homogeneity, and thinner ribbon.

  1. Crystal growth of new charge-transfer salts based on π-conjugated donor molecules

    Energy Technology Data Exchange (ETDEWEB)

    Morherr, Antonia, E-mail: morherr@stud.uni-frankfurt.de [Physikalisches Institut, Goethe-Universität Frankfurt am Main, 60438 Frankfurt am Main (Germany); Witt, Sebastian [Physikalisches Institut, Goethe-Universität Frankfurt am Main, 60438 Frankfurt am Main (Germany); Chernenkaya, Alisa [Graduate School Materials Science in Mainz, 55128 Mainz (Germany); Institut für Physik, Johannes Gutenberg-Universität, 55099 Mainz (Germany); Bäcker, Jan-Peter [Physikalisches Institut, Goethe-Universität Frankfurt am Main, 60438 Frankfurt am Main (Germany); Schönhense, Gerd [Institut für Physik, Johannes Gutenberg-Universität, 55099 Mainz (Germany); Bolte, Michael [Institut für anorganische Chemie, Goethe-Universität Frankfurt am Main, 60438 Frankfurt am Main (Germany); Krellner, Cornelius [Physikalisches Institut, Goethe-Universität Frankfurt am Main, 60438 Frankfurt am Main (Germany)

    2016-09-01

    New charge transfer crystals of π-conjugated, aromatic molecules (phenanthrene and picene) as donors were obtained by physical vapor transport. The melting behavior, optimization of crystal growth and the crystal structure are reported for charge transfer salts with (fluorinated) tetracyanoquinodimethane (TCNQ-F{sub x}, x=0, 2, 4), which was used as acceptor material. The crystal structures were determined by single-crystal X-ray diffraction. Growth conditions for different vapor pressures in closed ampules were applied and the effect of these starting conditions for crystal size and quality is reported. The process of charge transfer was investigated by geometrical analysis of the crystal structure and by infrared spectroscopy on single crystals. With these three different acceptor strengths and the two sets of donor materials, it is possible to investigate the distribution of the charge transfer systematically. This helps to understand the charge transfer process in this class of materials with π-conjugated donor molecules.

  2. Crystal growth of new charge-transfer salts based on π-conjugated donor molecules

    Science.gov (United States)

    Morherr, Antonia; Witt, Sebastian; Chernenkaya, Alisa; Bäcker, Jan-Peter; Schönhense, Gerd; Bolte, Michael; Krellner, Cornelius

    2016-09-01

    New charge transfer crystals of π-conjugated, aromatic molecules (phenanthrene and picene) as donors were obtained by physical vapor transport. The melting behavior, optimization of crystal growth and the crystal structure are reported for charge transfer salts with (fluorinated) tetracyanoquinodimethane (TCNQ-Fx, x=0, 2, 4), which was used as acceptor material. The crystal structures were determined by single-crystal X-ray diffraction. Growth conditions for different vapor pressures in closed ampules were applied and the effect of these starting conditions for crystal size and quality is reported. The process of charge transfer was investigated by geometrical analysis of the crystal structure and by infrared spectroscopy on single crystals. With these three different acceptor strengths and the two sets of donor materials, it is possible to investigate the distribution of the charge transfer systematically. This helps to understand the charge transfer process in this class of materials with π-conjugated donor molecules.

  3. Crystal Growth of new charge-transfer salts based on $\\pi$-conjugated molecules

    CERN Document Server

    Morherr, Antonia; Chernenkaya, Alisa; Bäcker, Jan-Peter; Schönhense, Gerd; Bolte, Michael; Krellner, Cornelius

    2016-01-01

    New charge transfer crystals of $\\pi$-conjugated, aromatic molecules (phenanthrene and picene) as donors were obtained by physical vapor transport. The melting behavior, optimization of crystal growth and the crystal structure is reported for charge transfer salts with (fluorinated) tetracyanoquinodimethane (TCNQ-F$_x$, x=0, 2, 4), which was used as acceptor material. The crystal structures were determined by single-crystal X-ray diffraction. Growth conditions for different vapor pressures in closed ampules were applied and the effect of these starting conditions for crystal size and quality is reported. The process of charge transfer was investigated by geometrical analysis of the crystal structure and by infrared spectroscopy on single crystals. With these three different acceptor strengths and the two sets of donor materials, it is possible to investigate the distribution of the charge transfer systematically. This helps to understand the charge transfer process in this class of materials with $\\pi$-conjug...

  4. Synthesis, Crystal Growth and Characterization of bis Dl-Valine Picrate Single Crystal for Second-Order Nonlinear Optical Applications

    Science.gov (United States)

    Silambarasan, A.; Krishna Kumar, M.; Sudhahar, S.; Thirunavukkarasu, A.; Mohan Kumar, R.; Umarani, P. R.

    2013-08-01

    An organic compound Bis DL-Valine picrate (BDLVP) was synthesized successfully and single crystal was grown by slow evaporation solution growth method. The presence of functional groups in the compound was identified by FTIR spectral analysis. Single crystal X-ray diffraction study revealed that the grown crystal belongs to P21/n space group of monoclinic crystal system. Powder X-ray diffraction pattern was recorded to know the crystalline perfection of the grown crystal. The reaction mechanism, thermal decomposition stages and thermal stability of the grown crystal were studied by using TG/DTA analysis. From the UV-visible spectral study, the electronic band gap energy (Eg) of the grown crystal was found to be 2.43 eV. The second harmonic generation (SHG) efficiency of grown crystal was found to be 1.3 times higher than KDP crystal by using Kurtz powder SHG technique. The microhardness property of the grown crystal was examined by Vicker's microhardness test.

  5. Single crystal growth in spin-coated films of polymorphic phthalocyanine derivative under solvent vapor

    Energy Technology Data Exchange (ETDEWEB)

    Higashi, T.; Ohmori, M.; Ramananarivo, M. F.; Fujii, A., E-mail: afujii@opal.eei.eng.osaka-u.ac.jp; Ozaki, M. [Division of Electrical, Electronic, and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871 (Japan)

    2015-12-01

    The effects of solvent vapor on spin-coated films of a polymorphic phthalocyanine derivative were investigated. Growth of single crystal films via redissolving organic films under solvent vapor was revealed by in situ microscopic observations of the films. X-ray diffraction measurement of the films after exposing to solvent vapor revealed the phase transition of polymorphs under solvent vapor. The direction of crystal growth was clarified by measuring the crystal orientation in a grown monodomain film. The mechanism of crystal growth based on redissolving organic films under solvent vapor was discussed in terms of the different solubilities of the polymorphs.

  6. Single crystal growth in spin-coated films of polymorphic phthalocyanine derivative under solvent vapor

    Directory of Open Access Journals (Sweden)

    T. Higashi

    2015-12-01

    Full Text Available The effects of solvent vapor on spin-coated films of a polymorphic phthalocyanine derivative were investigated. Growth of single crystal films via redissolving organic films under solvent vapor was revealed by in situ microscopic observations of the films. X-ray diffraction measurement of the films after exposing to solvent vapor revealed the phase transition of polymorphs under solvent vapor. The direction of crystal growth was clarified by measuring the crystal orientation in a grown monodomain film. The mechanism of crystal growth based on redissolving organic films under solvent vapor was discussed in terms of the different solubilities of the polymorphs.

  7. Industrial growth of yttria-stabilized cubic zirconia crystals by skull melting process

    Institute of Scientific and Technical Information of China (English)

    徐家跃; 雷秀云; 蒋新; 何庆波; 房永征; 张道标; 何雪梅

    2009-01-01

    We reported the development of a Ф100 cm growth apparatus for skull melting growth of yttria-stabilized cubic zirconia(YSZ) crystals and more than 1000 kg crystals have been grown in the furnace each time.The growth conditions were optimized and the structure of the as-grown crystals was characterized by X-ray diffraction.The transmittance of 15 mol.% yttria-stabilized cubic zirconia crystal was nearly 80% in the range of 400-1600 nm.The refractive indices were measured and fitted the Sellmeier equation whi...

  8. Method for the growth of large low-defect single crystals

    Science.gov (United States)

    Powell, J. Anthony (Inventor); Neudeck, Philip G. (Inventor); Trunek, Andrew J. (Inventor); Spry, David J. (Inventor)

    2008-01-01

    A method and the benefits resulting from the product thereof are disclosed for the growth of large, low-defect single-crystals of tetrahedrally-bonded crystal materials. The process utilizes a uniquely designed crystal shape whereby the direction of rapid growth is parallel to a preferred crystal direction. By establishing several regions of growth, a large single crystal that is largely defect-free can be grown at high growth rates. This process is particularly suitable for producing products for wide-bandgap semiconductors, such as SiC, GaN, AlN, and diamond. Large low-defect single crystals of these semiconductors enable greatly enhanced performance and reliability for applications involving high power, high voltage, and/or high temperature operating conditions.

  9. Growth Habit of Polar Crystal ZnO by Solid-vapor Method

    Institute of Scientific and Technical Information of China (English)

    MA Shufang; LIANG Jian; LIU Xuguang; ZHAO Junfu; XU Bingshe

    2011-01-01

    Crystals of semiconductor ZnO were fabricated by means of solid-vapor growth method-carbon thermal reduction. Powder X-ray diffraction and field emission scanning electron microscope were used to characterize the phase and morphology of the samples. The results showed that the samples were wurtzite ZnO crystals and anisotropy of crystal growth relied on reaction temperature in solid-vapor process. The crystals synthesized at different temperatures were of short column-like shape, flat top hexagon pyramidal-like shape and polyhedron shape. The growth mechanisms of the above three kinds of crystal were consistent with the theory of growth basic structural unit of negative ion coordination polyhedron. At first, Zn2+ and four O2- form [Zn-O4]6- coordination tetrahedron at any temperature. Then, tetrahedrons stack in different ways into different morphology crystal at different temperatures.

  10. Growth and Characterization of Organic NLO Crystal: β-Naphthol

    Institute of Scientific and Technical Information of China (English)

    S.Janarthanan; R.Sugaraj Samuel; S.Selvakumar; Y.C.Rajan; D.Jayaraman; S.Pandi

    2011-01-01

    Single crystals ofβ-Naphthol (βN), an organic nonlinear optical (NLO) material was successfully grown by temperature lowering method using chloroform as solvent. The initial compound was purified by repeated recrystallization process. As-grown crystals were characterized by single crystal X-ray diffraction (XRD) studies to ascertain that βN crystal crystallized in the monoclinic system with a noncemtrosymmetric space group. Vibrational frequencies of various functional groups in the crystals were derived from Fourier transform infrared (FTIR) spectroscopy and proton nuclear magnetic resonance (NMR) spectrum. Optical characterization was done using UV-Visible near-infrared (NIR) spectroscopy. The thermal behaviour of the material was studied by thermo gravimetric and differential thermal plots. Scanning electron microscopy (SEM) study was carried out on the surface of the grown crystals to investigate the nature of defects in the crystal surface and the NLO property of the crystal was tested by Nd:YAG laser as a source.

  11. Real-time processing of interferograms for monitoring protein crystal growth on the Space Station

    Science.gov (United States)

    Choudry, A.; Dupuis, N.

    1988-01-01

    The possibility of using microscopic interferometric techniques to monitor the growth of protein crystals on the Space Station is studied. Digital image processing techniques are used to develop a system for the real-time analysis of microscopic interferograms of nucleation sites during protein crystal growth. Features of the optical setup and the image processing system are discussed and experimental results are presented.

  12. Real-time processing of interferograms for monitoring protein crystal growth on the Space Station

    Science.gov (United States)

    Choudry, A.; Dupuis, N.

    1988-01-01

    The possibility of using microscopic interferometric techniques to monitor the growth of protein crystals on the Space Station is studied. Digital image processing techniques are used to develop a system for the real-time analysis of microscopic interferograms of nucleation sites during protein crystal growth. Features of the optical setup and the image processing system are discussed and experimental results are presented.

  13. Crystal growth, FTIR and thermal characterization of bis(ethyltriphenylphosphonium) tetrabromomanganate(II) dihydrate crystals

    Indian Academy of Sciences (India)

    C Ilamaran; M Sethuram; M Dhandapani; G Amirthaganesan

    2012-05-01

    Single crystals of a novel compound, bis(ethyltriphenylphosphonium) tetrabromomanganate(II) dihydrate (BTP-Mn) were grown by solution growth-slow evaporation technique from aqueous solution of the compound at ambient temperature. The grown crystals were characterized by elemental analysis, powder X-ray diffraction, thermal analysis, nuclear magnetic resonance spectroscopy (NMR) and Fourier transform infra-red spectroscopy (FTIR) techniques. The chemical composition of the compound was revealed by elemental analysis and its crystallinity was confirmed by powder X-ray diffraction. Thermal analysis confirmed that the compound was stable up to 125°C. The various kinds of protons and carbons present in the compound were confirmed by 1H NMR and 13C NMR technique respectively and the presence of phosphorous was confirmed by 31P NMR spectrum in the compound. The modes of vibration of different molecular groups present in the compound were identified by FTIR spectral analysis. The second harmonic generation behaviour was tested by Nd:YAG laser source.

  14. Morphology and Growth of Methyl Stearate as a Function of Crystallization Environment

    OpenAIRE

    Camacho, DM; Roberts, KJ; Muller, FL; Thomas, D.; More, I; Lewtas, K

    2017-01-01

    In situ studies of methyl stearate growing from supersaturated n-dodecane, kerosene, and toluene solutions reveal strong evidence that solvent choice influences the crystal morphology and crystal growth kinetics. Crystals with similar habit are observed in all solvents, with the exception of lower supersaturations in kerosene, where a less symmetric morphology was observed. BFDH analysis based on the monoclinic C2 crystal structure of methyl stearate yielded the morphological indexation to be...

  15. Growth of lithium triborate single crystals from molten salt solution under various temperature gradients

    Science.gov (United States)

    Guretskii, S. A.; Ges, A. P.; Zhigunov, D. I.; Ignatenko, A. A.; Kalanda, N. A.; Kurnevich, L. A.; Luginets, A. M.; Milovanov, A. S.; Molchan, P. V.

    1995-12-01

    Single crystals of lithium triborate LiB 3O 5 (LBO) have been grown by the top-seeded solution growth method with B 2O 3 as a solvent using different temperature gradients in the zone of crystallization. Optical and nonlinear optical properties of LBO single crystals have been investigated. The influence of post-growth thermal treatment in oxygen atmosphere on the optical properties has been studied.

  16. Effect of anisotropy on deep cellular crystal growth in directional solidification

    Science.gov (United States)

    Jiang, Han; Chen, Ming-Wen; Shi, Guo-Dong; Wang, Tao; Wang, Zi-Dong

    2016-06-01

    The effect of anisotropic surface tension and anisotropic interface kinetics on deep cellular crystal growth is studied. An asymptotic solution of deep cellular crystal growth in directional solidification is obtained by using the matched asymptotic expansion method and the multiple variable expansion method. The results show that as the anisotropic parameters increase, the total length of deep cellular crystal increases and the root depth increases, whereas the curvature of the interface near the root increases or the curvature radius decreases.

  17. The Effect of Ionic Liquids on the CaCO3 Crystal Growth

    Institute of Scientific and Technical Information of China (English)

    Zhi Guo HU; Shi Li SONG; Jian Ji WANG; Lin YANG

    2004-01-01

    In this paper, the effect of ionic liquids on the CaCO3 crystal growth has been studied for the first time. The obtained CaCO3 crystals were charactered by the X-ray diffraction and scanning electron micrographs. The results showed that the control ability of ionic liquids for CaCO3 crystals growth was dependent on the counter anion very much.

  18. Tunable Sum Frequency Mixing of a Ti∶sapphire Laser and a Nd∶YAG Laser

    Institute of Scientific and Technical Information of China (English)

    DING Xin; YAO Jianquan; YU Yizhong; YU Xuanyi; XU Jingjun; ZHANG Guangyin

    2001-01-01

    In this paper the theoretical and experimental results of sum-frequency mixing of a Ti∶sapphire laser and a 1.064 μm Nd∶YAG laser are presented. By using two KTP crystals cut at θ=76° and 85° (φ=90° in both crystals), respectively, the sum-frequency mixing tuning range from 459.3 to 509.6 nm in one Ti∶sapphire laser setup is experimentally achieved. The maximum output energy was 14.6 mJ and the energy conversion efficiency was up to 15.2%.

  19. Crystal growth of compound semiconductors in a low-gravity environment (InGaAs crystals) (M-22)

    Science.gov (United States)

    Tatsumi, Masami

    1993-01-01

    Compound semiconductor crystals, such as gallium arsenide and indium phosphide crystals, have many interesting properties that silicon crystals lack, and they are expected to be used as materials for optic and/or electro-optic integrated devices. Generally speaking, alloy semiconductors, which consist of more than three elements, demonstrate new functions. For example, values of important parameters, such as lattice constant and emission wavelength, can be chosen independently. However, as it is easy for macroscopic and/or microscopic fluctuations of composition to occur in alloy semiconductor crystals, it is difficult to obtain crystals having homogeneous properties. Macroscopic change of composition in a crystal is caused by the segregation phenomenon. This phenomenon is due to a continuous change in the concentration of constituent elements at the solid-liquid interfacing during solidification. On Earth, attempts were made to obtain a crystal with homogeneous composition by maintaining a constant melt composition near the solid-liquid interface, through suppression of the convection flow of the melt by applying a magnetic field. However, the attempt was not completely successful. Convective flow does not occur in microgravity because the gravity in space is from four to six orders of magnitude less than that on Earth. In such a case, mass transfer in the melt is dominated by the diffusion phenomenon. So, if crystal growth is carried out at a rate that is higher than the rate of mass transfer due to this phenomenon, it is expected that crystals having a homogeneous composition will be obtained. In addition, it is also possible that microscopic composition fluctuations (striation) may disappear because microscopic fluctuations diminish in the absence of convection. We are going to grow a bulk-indium gallium arsenide (InGaAs) crystal using the gradient heating furnace (GHF) in the first material processing test (FMPT). The structure of the sample is shown where In

  20. Interface defects in GaN/sapphire studied using Rutherford backscattering spectroscopy and channeling

    Indian Academy of Sciences (India)

    S K Sinha; P K Barhai

    2004-06-01

    GaN on sapphire was grown by MOCVD technique. Rutherford backscattering spectra together with channeling along [0 0 0 1] axis were recorded to study the defects at the interface. Detailed calculation shows that the defects at GaN/sapphire interface are due to dislocations which are distributed into the whole thickness of the film and are mainly aligned on the growth direction.

  1. Crystal growth mechanisms in miarolitic cavities in the Lake George ring complex and vicinity, Colorado

    Science.gov (United States)

    Kile, D.E.; Eberl, D.D.

    1999-01-01

    The Crystal Peak area of the Pikes Peak batholith, near Lake George in central Colorado, is world-renowned for its crystals of amazonite (the blue-green variety of microcline) and smoky quartz. Such crystals, collected from individual miarolitic pegmatites, have a remakably small variation in crystal size within each pegmatite, and the shapes of plots of their crystal size distributions (CSDs) are invariably lognormal or close to lognormal in all cases. These observations are explained by a crystal growth mechanism that was governed initially by surface-controlled kinetics, during which crystals tended to grow larger in proportion to their size, thereby establishing lognormal CSDs. Surface-controlled growth was followed by longer periods of supply controlled growth, during which growth rate was predominantly size-independent, consequently preserving the lognormal shapes of the CSDs and the small size variation. The change from surface- to supply controlled growth kinetics may have resulted from an increasing demand for nutrients that exceeded diffusion limitations of the system. The proposed model for crystal growth in this locality appears to be common in the geologic record, and can be used with other information, such as isotopic data, to deduce physico-chemical conditions during crystal formation.

  2. Growth and characterization of propyl-para-hydroxybenzoate single crystals

    Indian Academy of Sciences (India)

    N Karunagaran; P Ramasamy; R Perumal Ramasamy

    2014-10-01

    Single crystals of propyl--hydroxybenzoate have been grown by slow evaporation solution technique. The structure of the compound was confirmed by FT–IR, FT–Raman spectroscopy and single crystal X-ray diffraction studies. The crystalline perfection of the grown single crystals has been analysed by high resolution X-ray diffraction measurements. Optical properties of the grown single crystals were studied by UV–Vis NIR spectrum. The luminescence behaviour of the single crystal has been analysed by photoluminescence analysis and found maximum luminescence in the lower wavelength region. A simple interferometric technique was used for measuring birefringence of the crystal. The laser damage threshold of the crystal is 1.3 GW/cm2. The mechanical strength of the grown crystal is measured using Vickers microhardness tester. The dielectric properties have been investigated.

  3. Growth and characterization of hexamethylenetetramine crystals grown from solution

    Science.gov (United States)

    Babu, B.; Chandrasekaran, J.; Balaprabhakaran, S.

    2014-06-01

    Organic nonlinear optical single crystals of hexamethylenetetramine (HMT; 10 × 10 × 5 mm3) were prepared by crystallization from methanol solution. The grown crystals were subjected to various characterization techniques such as single crystal XRD, powder XRD, UV-Vis and electrical studies. Single crystal XRD analysis confirmed the crystalline structure of the grown crystals. Their crystalline nature was also confirmed by powder XRD technique. The optical transmittance property was identified from UV-Vis spectrum. Dielectric measurements were performed as a function of frequency at different temperatures. DC conductivity and photoconductivity studies were also carried out for the crystal. The powder second harmonic generation efficiency (SHG) of the crystal was measured using Nd:YAG laser and the efficiency was found to be two times greater than that of potassium dihydrogen phosphate (KDP).

  4. Growth and characterization of gel grown pure and mixed iron–manganese levo-tartrate crystals

    Indian Academy of Sciences (India)

    S J Joshi; B B Parekh; K D Vohra; M J Joshi

    2006-06-01

    Several applications of iron tartrate and manganese tartrate compounds are reported in the literature. In the present investigation, we have grown pure and mixed iron (II)–manganese levo-tartrate crystals by single diffusion gel growth technique. Crystals with spherulitic morphology were harvested. The colouration of the crystals changed from black to pinkish brown upon increasing the content of manganese in the crystals. The crystals were characterized by FTIR spectroscopy, powder XRD, TGA, VSM and dielectric study. Crystal structures of different mixed crystals were studied. From TGA it was observed that on heating the hydrated crystals became anhydrous and then converted into oxides. Paramagnetic nature of the crystals was revealed from VSM study. The variation of the dielectric constant with frequency was studied. The results are discussed.

  5. Sapphire scintillation tests for cryogenic detectors in the Edelweiss dark matter search

    Energy Technology Data Exchange (ETDEWEB)

    Luca, M

    2007-07-15

    Identifying the matter in the universe is one of the main challenges of modern cosmology and astrophysics. An important part of this matter seems to be made of non-baryonic particles. Edelweiss is a direct dark matter search using cryogenic germanium bolometers in order to look for particles that interact very weakly with the ordinary matter, generically known as WIMPs (weakly interacting massive particles). An important challenge for Edelweiss is the radioactive background and one of the ways to identify it is to use a larger variety of target crystals. Sapphire is a light target which can be complementary to the germanium crystals already in use. Spectroscopic characterization studies have been performed using different sapphire samples in order to find the optimum doping concentration for good low temperature scintillation. Ti doped crystals with weak Ti concentrations have been used for systematic X ray excitation tests both at room temperature and down to 30 K. The tests have shown that the best Ti concentration for optimum room temperature scintillation is 100 ppm and 50 ppm at T = 45 K. All concentrations have been checked by optical absorption and fluorescence. After having shown that sapphire had interesting characteristics for building heat-scintillation detectors, we have tested if using a sapphire detector was feasible within a dark matter search. During the first commissioning tests of Edelweiss-II, we have proved the compatibility between a sapphire heat scintillation detector and the experimental setup. (author)

  6. Progress in art and science of crystal growth and its impacts on modern society

    Science.gov (United States)

    Nishinaga, Tatau

    2015-05-01

    The impacts of the progress in the art and science of crystal growth on human life are reviewed. Even before the invention of the transistor, quartz and corundum crystals were used as crystal oscillators and jewel bearings, respectively. However, a major impact of crystal growth on society was experienced with the invention of the transistor, which required high-purity and perfect germanium crystals. Once the importance of crystal growth was clearly recognized, the science of crystal growth also extensively developed. The growth of single crystalline silicon allows us to produce integrated circuits, which are used in all the electronic devices in everyday use. The technological developments in the growth of compound semiconductors have also had a large impact on society through the inventions of the laser diode for optical communication and the p-n junction nitride light-emitting diode toward the realization of a less energy-intensive society. The latter invention was awarded the 2014 Nobel Prize in Physics. Finally, future aspects of crystal growth are discussed.

  7. Extracellular matrix protein in calcified endoskeleton: a potential additive for crystal growth and design

    Science.gov (United States)

    Azizur Rahman, M.; Fujimura, Hiroyuki; Shinjo, Ryuichi; Oomori, Tamotsu

    2011-06-01

    In this study, we demonstrate a key function of extracellular matrix proteins (ECMPs) on seed crystals, which are isolated from calcified endoskeletons of soft coral and contain only CaCO 3 without any living cells. This is the first report that an ECMP protein extracted from a marine organism could potentially influence in modifying the surface of a substrate for designing materials via crystallization. We previously studied with the ECMPs from a different type of soft coral ( Sinularia polydactyla) without introducing any seed crystals in the process , which showed different results. Thus, crystallization on the seed in the presence of ECMPs of present species is an important first step toward linking function to individual proteins from soft coral. For understanding this interesting phenomenon, in vitro crystallization was initiated in a supersaturated solution on seed particles of calcite (1 0 4) with and without ECMPs. No change in the crystal growth shape occurred without ECMPs present during the crystallization process. However, with ECMPs, the morphology and phase of the crystals in the crystallization process changed dramatically. Upon completion of crystallization with ECMPs, an attractive crystal morphology was found. Scanning electron microscopy (SEM) was utilized to observe the crystal morphologies on the seeds surface. The mineral phases of crystals nucleated by ECMPs on the seeds surface were examined by Raman spectroscopy. Although 50 mM Mg 2+ is influential in making aragonite in the crystallization process, the ECMPs significantly made calcite crystals even when 50 mM Mg 2+ was present in the process. Crystallization with the ECMP additive seems to be a technically attractive strategy to generate assembled micro crystals that could be used in crystals growth and design in the Pharmaceutical and biotechnology industries.

  8. Crystallization Kinetics of Organic–Inorganic Trihalide Perovskites and the Role of the Lead Anion in Crystal Growth

    KAUST Repository

    Moore, David T.

    2015-02-18

    © 2015 American Chemical Society. Methylammonium lead halide perovskite solar cells continue to excite the research community due to their rapidly increasing performance which, in large part, is due to improvements in film morphology. The next step in this progression is control of the crystal morphology which requires a better fundamental understanding of the crystal growth. In this study we use in situ X-ray scattering data to study isothermal transformations of perovskite films derived from chloride, iodide, nitrate, and acetate lead salts. Using established models we determine the activation energy for crystallization and find that it changes as a function of the lead salt. Further analysis enabled determination of the precursor composition and showed that the primary step in perovskite formation is removal of excess organic salt from the precursor. This understanding suggests that careful choice of the lead salt will aid in controlling crystal growth, leading to superior films and better performing solar cells.

  9. Crystallization kinetics of organic-inorganic trihalide perovskites and the role of the lead anion in crystal growth.

    Science.gov (United States)

    Moore, David T; Sai, Hiroaki; Tan, Kwan W; Smilgies, Detlef-M; Zhang, Wei; Snaith, Henry J; Wiesner, Ulrich; Estroff, Lara A

    2015-02-18

    Methylammonium lead halide perovskite solar cells continue to excite the research community due to their rapidly increasing performance which, in large part, is due to improvements in film morphology. The next step in this progression is control of the crystal morphology which requires a better fundamental understanding of the crystal growth. In this study we use in situ X-ray scattering data to study isothermal transformations of perovskite films derived from chloride, iodide, nitrate, and acetate lead salts. Using established models we determine the activation energy for crystallization and find that it changes as a function of the lead salt. Further analysis enabled determination of the precursor composition and showed that the primary step in perovskite formation is removal of excess organic salt from the precursor. This understanding suggests that careful choice of the lead salt will aid in controlling crystal growth, leading to superior films and better performing solar cells.

  10. Thermodynamic reactivity, growth and characterization of mercurous halide crystals

    Science.gov (United States)

    Singh, N. B.; Gottlieb, M.; Henningsen, T.; Hopkins, R. H.; Mazelsky, R.; Singh, M.; Glicksman, M. E.; Paradies, C.

    1992-01-01

    Thermodynamic calculations were carried out for the Hg-X-O system (X = Cl, Br, I) to identify the potential sources of contamination and relative stability of oxides and oxy-halide phases. The effect of excess mercury vapor pressure on the optical quality of mercurous halide crystal was studied by growing several mercurous chloride crystals from mercury-rich composition. The optical quality of crystals was examined by birefringence interferometry and laser scattering studies. Crystals grown in slightly mercury-rich composition showed improved optical quality relative to stoichiometric crystals.

  11. Ground based experiments on the growth and characterization of L-Arginine Phosphate (LAP) crystals

    Science.gov (United States)

    Rao, S. M.; Cao, C.; Batra, A. K.; Lal, R. B.; Mookherji, T. K.

    1991-01-01

    L-Arginine Phosphate (LAP) is a new nonlinear optical material with higher efficiency for harmonic generation compared to KDP. Crystals of LAP were grown in the laboratory from supersaturated solutions by temperature lowering technique. Investigations revealed the presence of large dislocation densities inside the crystals which are observed to produce refractive index changes causing damage at high laser powers. This is a result of the convection during crystal growth from supersaturated solutions. It is proposed to grow these crystals in a diffusion controlled growth condition under microgravity environment and compare the crystals grown in space with those grown on ground. Physical properties of the solutions needed for modelling of crystal growth are also presented.

  12. Simulation of the flow and mass transfer for KDP crystals undergoing 2D translation during growth

    Science.gov (United States)

    Zhou, Chuan; Li, Mingwei; Hu, Zhitao; Yin, Huawei; Wang, Bangguo; Cui, Qidong

    2016-09-01

    In this study, a novel motion mode for crystals during growth, i.e., 2D translation, is proposed. Numerical simulations of flow and mass transfer are conducted for the growth of large-scale potassium dihydrogen phosphate (KDP) crystals subjected to the new motion mode. Surface supersaturation and shear stress are obtained as functions of the translational velocity, distance, size, orientation of crystals. The dependence of these two parameters on the flow fields around the crystals is also discussed. The thicknesses of the solute boundary layer varied with translational velocity are described. The characteristics of solution flow and surface supersaturation distribution are summarized, where it suggests that the morphological stability of a crystal surface can be enhanced if the proposed 2D translation is applied to crystal growth.

  13. Effects of interlayer growth condition on the transport properties of heterostructures with InGaN channel grown on sapphire by metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yachao; Zhou, Xiaowei; Xu, Shengrui; Wang, Zhizhe; Zhao, Yi; Zhang, Jinfeng; Chen, Dazheng; Zhang, Jincheng, E-mail: jchzhang@xidian.edu.cn; Hao, Yue, E-mail: yhao@xidian.edu.cn [State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, No.2 South TaiBai Road, Xi' an 710071 (China)

    2015-04-13

    The effects of AlN interlayer growth condition on the properties of InAlN/InGaN heterostructures are investigated in detail. Since the properties of InGaN channel are different from the traditional GaN channel, two-step AlN interlayer is proposed, which is proven to be more suitable for the InGaN channel heterostructures than the interlayers grown at constant temperature. Test results show that two-step AlN interlayer can not only significantly improve the interface morphology between the InGaN channel and barrier layers but also make an effective protection of the high-quality InGaN channel. The electron mobility of the InAlN/InGaN heterostructure with two-step AlN interlayer achieves 890 cm{sup 2}/V s with a high two-dimensional-electron-gas density of 1.78 × 10{sup 13 }cm{sup −2}. The gratifying results indicate that the InGaN channel heterostructure with two-step interlayer is a promising candidate for microwave power devices.

  14. Investigation on Growth and Optical Properties of LVCC Single Crystals

    Directory of Open Access Journals (Sweden)

    N. Sheen Kumar

    2014-11-01

    Full Text Available L-valine cadmium chloride (LVCC single crystals were grown by slow evaporation technique with different concentrations (0.25, 0.5, 0.75 and 1.0 mole of CdCl2. All the grown crystals were subjected to single crystal X-ray diffraction analysis. Solid state parameters were calculated for the grown crystals. The optical properties of the crystals were investigated by UV-Vis. absorption spectroscopy. The results revealed that, the wider bandgap and large transparency in the visible region along with higher polarizability of the grown crystals are highly useful in optoelectronic devices. Also according to our needs, one can tune the optical and electrical properties of LVCC crystals by adjusting the concentration of CdCl2 in LVCC.

  15. Crystal growth inhibitors for the prevention of L-cystine kidney stones through molecular design.

    Science.gov (United States)

    Rimer, Jeffrey D; An, Zhihua; Zhu, Zina; Lee, Michael H; Goldfarb, David S; Wesson, Jeffrey A; Ward, Michael D

    2010-10-15

    Crystallization of L-cystine is a critical step in the pathogenesis of cystine kidney stones. Treatments for this disease are somewhat effective but often lead to adverse side effects. Real-time in situ atomic force microscopy (AFM) reveals that L-cystine dimethylester (L-CDME) and L-cystine methylester (L-CME) dramatically reduce the growth velocity of the six symmetry-equivalent {100} steps because of specific binding at the crystal surface, which frustrates the attachment of L-cystine molecules. L-CDME and L-CME produce l-cystine crystals with different habits that reveal distinct binding modes at the crystal surfaces. The AFM observations are mirrored by reduced crystal yield and crystal size in the presence of L-CDME and L-CME, collectively suggesting a new pathway to the prevention of L-cystine stones by rational design of crystal growth inhibitors.

  16. Crystal Growth Inhibitors for the Prevention of L-Cystine Kidney Stones Through Molecular Design

    Energy Technology Data Exchange (ETDEWEB)

    Rimer, Jeffrey D.; An, Zhihua; Zhu, Zina; Lee, Michael H.; Goldfarb, David S.; Wesson, Jeffrey A.; Ward, Michael D. (NY Univ.); (MCW)

    2010-11-12

    Crystallization of L-cystine is a critical step in the pathogenesis of cystine kidney stones. Treatments for this disease are somewhat effective but often lead to adverse side effects. Real-time in situ atomic force microscopy (AFM) reveals that L-cystine dimethylester (L-CDME) and L-cystine methylester (L-CME) dramatically reduce the growth velocity of the six symmetry-equivalent {l_brace}100{r_brace} steps because of specific binding at the crystal surface, which frustrates the attachment of L-cystine molecules. L-CDME and L-CME produce L-cystine crystals with different habits that reveal distinct binding modes at the crystal surfaces. The AFM observations are mirrored by reduced crystal yield and crystal size in the presence of L-CDME and L-CME, collectively suggesting a new pathway to the prevention of L-cystine stones by rational design of crystal growth inhibitors.

  17. Raman Spectrum Analysis on the Solid-Liquid Boundary Layer of BGO Crystal Growth

    Institute of Scientific and Technical Information of China (English)

    ZHANG Xia; YIN Shao-Tang; WAN Song-Ming; YOU Jing-Lin; CHEN Hui; ZHAO Si-Jie; ZHANG Qing-Li

    2007-01-01

    We study the Raman spectra of Bi4Ge3O12 crystal at different temperatures, as well as its melt. The structure characters of the single crystal, melt and growth solid-liquid boundary layer of BGO are investigated by their high-temperature Raman spectra for the first time. The rule of structure change of BGO crystal with increasing temperature is analysed. The results show that there exists [GeO4] polyhedral structure and Bi ion independently in BGO melt. The bridge bonds Bi-O-Bi and Bi-O-Ge appear in the crystal and at the boundary layer, but disappear in the melt. The structure of the growth solid-liquid boundary layer is similar to that of BGO crystal. In the melt, the long-range order structure of the crystal disappears. The thickness of the grovth solid-liquid boundary layer of BGO crystal is about 50 μm.

  18. Methodology of Single Crystal Growth and Microstructure Analysis of CoTi(Zr) Intermetallic Compounds

    Institute of Scientific and Technical Information of China (English)

    Lijuan ZHANG; Mike L.JENKINS; Glyn TAYLOR

    2005-01-01

    The effects of preparation and crystal growth methods on the microstructure, composition, and oxidation of CoTi(Zr)intermetallics were dealt with. A group of methods has been used to produce CoTi and CoTi(Zr) crystals to prevent the formation of titanium oxide particles during melting and crystal growth. The results show that more oxides formed when using powdered starting materials even though the metals handled were and melted under an inert gas atmosphere; using bulk starting materials produced alloys showed less oxidation than powders, but adding a small amount of Al to getter the oxygen was not sufficient to prevent TiO2 formation. However, using a slightly reducing atmosphere during initial melting was highly effective in reducing the formation of oxide. Crystal growth carried out in Ar did not reduce the amount of oxide but only redistributed the particles. TiO2 particles were found only inthe grain boundaries after crystal growing, where they obstructed grain growth. Crystal growth in a vacuum was found to be essential in producing oxide free crystals. A seed selection technique was developed and used in growing CoTi single crystals. The microstructures of the samples were determined using optical microscopy, scanning electron microscopy and transmission electron microscopy, including the morphologies, grain sizes, oxide distributions and crystal structure confirmation.

  19. Development of compartment for studies on the growth of protein crystals in space.

    Science.gov (United States)

    Yamazaki, T; Tsukamoto, K; Yoshizaki, I; Fukuyama, S; Miura, H; Shimaoka, T; Maki, T; Oshi, K; Kimura, Y

    2016-03-01

    To clarify the growth mechanism of a protein crystal, it is essential to measure its growth rate with respect to the supersaturation. We developed a compartment (growth cell) for measuring the growth rate (materials for these components with care. The equipment was successfully used to examine the growth of a lysozyme crystal at a controlled supersaturation in space, where convection is negligible because of the microgravity environment, thereby advancing our understanding of the mechanism of protein crystal growth from solution. The technique used to develop the growth cell is useful not only for space experiments but also for kinetic studies of materials with very slow growth and dissolution rates (<10(-3) nm s(-1)).

  20. Ampoule failure sensor development for semiconductor crystal growth experiments

    Science.gov (United States)

    Watring, Dale A.; Johnson, Martin

    1994-01-01

    Currently there are no devices to detect an ampoule failure in semiconductor crystal growth experiments. If an ampoule fails, it will go undetected until the containing cartridge is breached due to chemical degradation. The experiment will then be terminated resulting in a failed experiment and a loss of data. The objective of this research was to develop a reliable failure sensor that would detect a specific liquid or vapor material before the metallic cartridge is degraded and the processing furnace contaminated. The sensor is a chemical fuse made from a metal with which the semiconductor material reacts more rapidly than it does with the containing cartridge. Upon ampoule failure, the sensor is exposed to the vapor or liquid semiconductor and the chemical reaction causes a resistance change in the sensor material. The sensor shows a step change in resistance on the order of megohms when exposed to mercury zinc telluride (HgZnTe), mercury cadmium telluride (HgCdTe), or gallium arsenide (GaAs). This ampoule failure sensor is being tested for possible use on the second United States Microgravity Mission (USML-2) and is the subject of a NASA patent application.

  1. The effect of tailor-made additives on crystal growth of methyl paraben: Experiments and modelling

    Science.gov (United States)

    Cai, Zhihui; Liu, Yong; Song, Yang; Guan, Guoqiang; Jiang, Yanbin

    2017-03-01

    In this study, methyl paraben (MP) was selected as the model component, and acetaminophen (APAP), p-methyl acetanilide (PMAA) and acetanilide (ACET), which share the similar molecular structure as MP, were selected as the three tailor-made additives to study the effect of tailor-made additives on the crystal growth of MP. HPLC results indicated that the MP crystals induced by the three additives contained MP only. Photographs of the single crystals prepared indicated that the morphology of the MP crystals was greatly changed by the additives, but PXRD and single crystal diffraction results illustrated that the MP crystals were the same polymorph only with different crystal habits, and no new crystal form was found compared with other references. To investigate the effect of the additives on the crystal growth, the interaction between additives and facets was discussed in detail using the DFT methods and MD simulations. The results showed that APAP, PMAA and ACET would be selectively adsorbed on the growth surfaces of the crystal facets, which induced the change in MP crystal habits.

  2. Boron Arsenide and Boron Phosphide for High Temperature and Luminescent Devices. [semiconductor devices - crystal growth/crystal structure

    Science.gov (United States)

    Chu, T. L.

    1975-01-01

    The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.

  3. Growth of organic crystals via attachment and transformation of nanoscopic precursors

    Science.gov (United States)

    Jiang, Yuan; Kellermeier, Matthias; Gebaue, Denis; Lu, Zihao; Rosenberg, Rose; Moise, Adrian; Przybylski, Michael; Cölfen, Helmut

    2017-06-01

    A key requirement for the understanding of crystal growth is to detect how new layers form and grow at the nanoscale. Multistage crystallization pathways involving liquid-like, amorphous or metastable crystalline precursors have been predicted by theoretical work and have been observed experimentally. Nevertheless, there is no clear evidence that any of these precursors can also be relevant for the growth of crystals of organic compounds. Herein, we present a new growth mode for crystals of DL-glutamic acid monohydrate that proceeds through the attachment of preformed nanoscopic species from solution, their subsequent decrease in height at the surface and final transformation into crystalline 2D nuclei that eventually build new molecular layers by further monomer incorporation. This alternative mechanism provides a direct proof for the existence of multistage pathways in the crystallization of molecular compounds and the relevance of precursor units larger than the monomeric constituents in the actual stage of growth.

  4. Growth of 2 Inch Eu-doped SrI2 single crystals for scintillator applications

    Science.gov (United States)

    Yoshikawa, Akira; Shoji, Yasuhiro; Yokota, Yuui; Kurosawa, Shunsuke; Hayasaka, Shoki; Chani, Valery I.; Ito, Tomoki; Kamada, Kei; Ohashi, Yuji; Kochurikhin, Vladimir

    2016-10-01

    A vertical Bridgman (VB) crystal growth process was established using modified micro-pulling-down (μ-PD) crystal growth system with a removable chamber that was developed for the growth of deliquescent halide single crystals because conventional μ-PD method does not allow growth of large bulk single crystals. Eu:SrI2 crystals were grown from the melt of (Sr0.98Eu0.02)I2 composition using carbon crucibles. Undoped μ-PD SrI2 crystals were used as seeds that were affixed to the bottom of the crucible. All the preparations preceding the growths and the hot zone assembling were performed in a glove box with Ar gas. Then the removable chamber was taken out of the glove box, attached to the μ-PD system, connected with a Turbo Molecular pump, and evacuated down to 10-4 Pa at 300 °C. After the baking procedure, high purity Ar gas (6N) was injected into the chamber. The crucible was heated by a high frequency induction coil up to the melting point of Eu:SrI2. After melting the starting materials, the crucible was displaced in downward direction for the crystal growth and then cooled down to room temperature. Thus, 2 in. and crack-free Eu:SrI2 bulk crystals were produced. The crystals had high transparency and did not contain any visible inclusions. The crystals were cut and polished in the glove box and then sealed in an aluminum container with an optical window for characterization. The details of the crystal growth are discussed.

  5. Crystal growth and properties of novel organic nonlinear optical crystals of 4-Nitrophenol urea

    Energy Technology Data Exchange (ETDEWEB)

    Mohan, M. Krishna, E-mail: krishnamohan.m@ktr.srmuniv.ac.in; Ponnusamy, S.; Muthamizhchelvan, C.

    2017-07-01

    Single crystals of 4-Nitrophenol urea have been grown from water using slow evaporation technique at constant temperature, with the vision to improve the properties of the crystals. The unit cell parameters of the grown crystals were determined by single crystal and powder X-Ray diffraction. FTIR studies reveals the presence of different vibrational bands. The Optical studies confirmed that the crystal is transparent up to 360 nm .TGA and DSC studies were carried out to understand the thermal behavior of crystals. The SHG studies show the suitability of the crystals for NLO applications. The etching studies were carried out to study the behavior of the crystals under different conditions.These studies reveal that the crystals of 4-Nitrophenol urea are suitable for device applications. - Highlights: • 4-Nitrophenol urea crystals of dimensions 14 mm × 1 mm were grown. • UV–Visible studies indicate the crystal is transparent in the region of 370–800 nm. • Thermal studies show the crystal starts decomposing at 170 °C. • SHG studies indicate that the crystals have NLO efficiency 3.5 times that of KDP.

  6. Synthesis, Growth, and Characterization of Bisglycine Hydrobromide Single Crystal

    Directory of Open Access Journals (Sweden)

    Koteeswari Pandurangan

    2014-01-01

    Full Text Available Single crystals of BGHB were grown by slow evaporation technique. The unit cell dimensions and space group of the grown crystals were confirmed by single crystal X-ray diffraction. The modes of vibration of the molecules and the presence of functional groups were identified using FTIR technique. The microhardness study shows that the Vickers hardness number of the crystal increases with the increase in applied load. The optical properties of the crystals were determined using UV-Visible spectroscopy. The thermal properties of the grown crystal were also determined. The refractive index was determined as 1.396 using Brewster’s angle method. The emission of green light on passing the Nd: YAG laser light confirmed the second harmonic generation property of the crystals and the SHG efficiency of the crystals was found to be higher than that of KDP. The dielectric constant and dielectric loss measurements were carried out for different temperatures and frequencies. The ac conductivity study of the crystals was also discussed. The photoconductivity studies confirm that the grown crystal has negative photoconductivity nature. The etching studies were carried out to study the formation of etch pits.

  7. Crystal growth of Ba 3BP 3O 12 with BPO 4-NaF flux

    Science.gov (United States)

    Zhang, Zhi-Jun; Wang, Hong; Hu, Guan-Qin; Chen, Hao-Hong; Yang, Xin-Xin; Zhao, Jing-Tai

    2010-04-01

    Single crystals of Ba 3BP 3O 12 with size of 10×8×2 mm 3 have been grown by the top-seeded solution growth (TSSG) method using BPO 4-NaF mixture as the flux. The crystals were characterized by X-ray powder diffraction, field emission scanning electron microscopy (FE-SEM) and transmittance spectrum. Ba 3BP 3O 12 single crystal exhibits wide transparency in the range 250-800 nm. The preparation process of starting materials and the effect of flux on the crystal growth were discussed.

  8. Annealing effects of sapphire substrate on properties of ZnO films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y.Z. [South China Normal University, School of Physics and Telecommunication Engineering, Guangzhou (China); Xu, J. [Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics, P.O. Box 800-211, Shanghai (China)

    2007-09-15

    The annealing effects of sapphire substrates on the quality of epitaxial ZnO films grown by dc reactive magnetron sputtering were studied. The atomic steps formed on (0001) sapphire ({alpha}-Al{sub 2}O{sub 3}) substrates surface by annealing at high temperature were analyzed by atomic force microscopy. Their influence on the growth of ZnO films was examined by X-ray diffraction and photoluminescence measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates for ZnO grown by magnetron sputtering is 1400 C for 1 h in air. (orig.)

  9. Inhibition of ice crystal growth in ice cream mix by gelatin hydrolysate.

    Science.gov (United States)

    Damodaran, Srinivasan

    2007-12-26

    The inhibition of ice crystal growth in ice cream mix by gelatin hydrolysate produced by papain action was studied. The ice crystal growth was monitored by thermal cycling between -14 and -12 degrees C at a rate of one cycle per 3 min. It is shown that the hydrolysate fraction containing peptides in the molecular weight range of about 2000-5000 Da exhibited the highest inhibitory activity on ice crystal growth in ice cream mix, whereas fractions containing peptides greater than 7000 Da did not inhibit ice crystal growth. The size distribution of gelatin peptides formed in the hydrolysate was influenced by the pH of hydrolysis. The optimum hydrolysis conditions for producing peptides with maximum ice crystal growth inhibitory activity was pH 7 at 37 degrees C for 10 min at a papain to gelatin ratio of 1:100. However, this may depend on the type and source of gelatin. The possible mechanism of ice crystal growth inhibition by peptides from gelatin is discussed. Molecular modeling of model gelatin peptides revealed that they form an oxygen triad plane at the C-terminus with oxygen-oxygen distances similar to those found in ice nuclei. Binding of this oxygen triad plane to the prism face of ice nuclei via hydrogen bonding appears to be the mechanism by which gelatin hydrolysate might be inhibiting ice crystal growth in ice cream mix.

  10. Growth and characterization of organic material 4-dimethylaminobenzaldehyde single crystal

    Science.gov (United States)

    Jebin, R. P.; Suthan, T.; Rajesh, N. P.; Vinitha, G.; Madhusoodhanan, U.

    2015-01-01

    The organic material 4-dimethylaminobenzaldehyde single crystals were grown by slow evaporation technique. The grown crystal was confirmed by the single crystal and powder X-ray diffraction analyses. The functional groups of the crystal have been identified from the Fourier Transform Infrared (FTIR) and FT-Raman studies. The optical property of the grown crystal was analyzed by UV-Vis-NIR and photoluminescence (PL) spectral measurements. The thermal behavior of the grown crystal was analyzed by thermogravimetric (TG) and differential thermal analyses (DTA). Dielectric measurements were carried out with different frequencies by using parallel plate capacitor method. The third order nonlinear optical properties of 4-dimethylaminobenzaldehyde was measured by the Z-scan technique using 532 nm diode pumped continuous wave (CW) Nd:YAG laser.

  11. Synthesis, growth, structural, thermal and optical studies of pyrrolidinium-2-carboxylate-4-nitrophenol single crystals

    Science.gov (United States)

    Swarna Sowmya, N.; Sampathkrishnan, S.; Vidyalakshmi, Y.; Sudhahar, S.; Mohan Kumar, R.

    2015-06-01

    Organic nonlinear optical material, pyrrolidinium-2-carboxylate-4-nitrophenol (PCN) was synthesized and single crystals were grown by slow evaporation solution growth method. Single crystal X-ray diffraction analysis confirmed the structure and lattice parameters of PCN crystals. Infrared, Raman and NMR spectral analyses were used to elucidate the functional groups present in the compound. The thermal behavior of synthesized compound was studied by thermogravimetric and differential scanning calorimetry (TG-DSC) analyses. The photoluminescence property was studied by exciting the crystal at 360 nm. The relative second harmonic generation (SHG) efficiency of grown crystal was estimated by using Nd:YAG laser with fundamental wavelength of 1064 nm.

  12. Crystal growth and comparison of vibrational and thermal properties of semi-organic nonlinear optical materials

    Indian Academy of Sciences (India)

    S Gunasekaran; G Anand; R Arun Balaji; J Dhanalakshmi; S Kumaresan

    2010-10-01

    Single crystals of urea thiourea mercuric sulphate (UTHS) and urea thiourea mercuric chloride (UTHC), semi-organic nonlinear optical materials, were grown by low-temperature solution growth technique by slow evaporation method using water as the solvent. Good quality single crystals were grown within three weeks. The nonlinear nature of the crystals was confirmed by SHG test. The UV–Vis spectrum showed the transmitting ability of the crystals in the entire visible region. FTIR spectrum was recorded and vibrational assignments were made. The degree of dopant inclusion was ascertained by AAS. The TGA–DTA studies showed the thermal properties of the crystals.

  13. Growth of centimeter-sized C60 single crystals

    Institute of Scientific and Technical Information of China (English)

    李宏年; 徐亚伯; 张建华; 何丕模; 李海洋; 吴太权; 鲍世宁

    2001-01-01

    C60 single crystals larger than one centimeter in size are grown with vapor method by nucleation control and by a proper time-dependent temperature process which allows only one nucleus growing larger and larger. X-ray diffraction patterns exhibit the high quality of the sample. As an example of the applications of large single C60 crystals,svnchrotron radiation photoemission spectra are measured to investigate the fine structure of valence bands of C60 crystals.

  14. Ultratough CVD single crystal diamond and three dimensional growth thereof

    Science.gov (United States)

    Hemley, Russell J [Washington, DC; Mao, Ho-kwang [Washington, DC; Yan, Chih-shiue [Washington, DC

    2009-09-29

    The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m.sup.1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m.sup.1/2. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.

  15. Modeling high speed growth of large rods of cesium iodide crystals by edge-defined film-fed growth (EFG)

    Science.gov (United States)

    Yeckel, Andrew

    2016-09-01

    A thermocapillary model of edge-defined film-fed growth (EFG) is developed to analyze an experimental system for high speed growth of cesium iodide as a model system for halide scintillator production. The model simulates heat transfer and fluid dynamics in the die, melt, and crystal under conditions of steady growth. Appropriate mass, force, and energy balances are used to compute self-consistent shapes of the growth interface and melt-vapor meniscus. The model is applied to study the effects of growth rate, die geometry, and furnace heat transfer on the limits of system operability. An inverse problem formulation is used to seek operable states at high growth rates by adjusting the overall temperature level and thermal gradient in the furnace. The model predicts that steady growth is feasible at rates greater than 20 mm/h for crystals up to 18 mm in diameter under reasonable furnace gradients.

  16. GROWTH RATE DISTRIBUTION OF BORAX SINGLE CRYSTALS ON THE (001 FACE UNDER VARIOUS FLOW RATES

    Directory of Open Access Journals (Sweden)

    Suharso Suharso

    2010-06-01

    Full Text Available The growth rates of borax single crystals from aqueous solutions at various flow rates in the (001 direction were measured using in situ cell method. From the growth rate data obtained, the growth rate distribution of borax crystals was investigated using Minitab Software and SPSS Software at relative supersaturation of 0807 and temperature of 25 °C. The result shows that normal, gamma, and log-normal distribution give a reasonably good fit to GRD. However, there is no correlation between growth rate distribution and flow rate of solution.   Keywords: growth rate dispersion (GRD, borax, flow rate

  17. Semiconductor crystal growth and segregation problems on earth and in space

    Science.gov (United States)

    Gatos, H. C.

    1982-01-01

    Semiconductor crystal growth and segregation problems are examined in the context of their relationship to material properties, and some of the problems are illustrated with specific experimental results. The compositional and structural defects encountered in semiconductors are largely associated with gravity-induced convective currents in the melt; additional problems are introduced by variations in stoichiometry. It is demonstrated that in near-zero gravity environment, crystal growth and segregation takes place under ideal steady-state conditions with minimum convective interference. A discussion of the advantages of zero-gravity crystal growth is followed by a summary of problems arising from the absence of gravitational forces.

  18. Czochralski growth of Gd2Ti2O7 single crystals

    Science.gov (United States)

    Guo, F. Y.; Zhang, W. H.; Ruan, M.; Kang, J. B.; Chen, J. Z.

    2014-09-01

    Gd2Ti2O7 (GTO) single crystals having dimensions of 17×17×20 mm3 were grown by the Czochralski method. These crystals displayed a strong growth habit with {1 1 1} facets. The colors of the as-grown crystals were sensitive to the oxygen concentration both during growth and post-growth annealing. The possible reason for the different colors is discussed and based on transmission, energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron spin resonance (ESR) analyses.

  19. OPTICAL DIAGNOSTIC AND MODELING SOLUTION GROWTH PROCESS OF SODIUM CHLORATE CRYSTALS

    Institute of Scientific and Technical Information of China (English)

    WANG Tao; DUAN Li

    2006-01-01

    Both a real time optical interferometric experiment and a numerical simulation of two-dimension non-steady state model were employed to study the growth process of aqueous sodium chlorate crystals. The parameters such as solution concentration distribution, crystal dimensions, growth rate and velocity field were obtained by both experiment and numerical simulation. The influence of earth gravity during crystal growth process was analyzed. A reasonable theory model corresponding to the present experiment is advanced. The thickness of concentration boundary layer was investigated especially. The results from the experiment and numerical simulation match well.

  20. Acousto-optical phonon excitation in cubic piezoelectric slabs and crystal growth orientation effects

    DEFF Research Database (Denmark)

    Willatzen, Morten; Duggen, Lars

    2017-01-01

    mode density in GaAs can change by a factor of approximately 2–3 at qx a = 1 for different crystal-growth directions relative to the slab thickness direction. In particular, it is found that optical and acoustic phonon modes are always piezoelectrically coupled, independent of the crystal......-growth direction, and will be jointly excited by electrical stimulus. We demonstrate this for an electrically excited freestanding slab for two cases of high-symmetry crystal-growth directions and finally show the impact of the Drude model for permittivity on the phonon dispersion. In particular, it is verified...

  1. Zirconate Pyrochlore Frustrated Magnets: Crystal Growth by the Floating Zone Technique

    Directory of Open Access Journals (Sweden)

    Monica Ciomaga Hatnean

    2016-07-01

    Full Text Available This article reviews recent achievements on the crystal growth of a new series of pyrochlore oxides—lanthanide zirconates, which are frustrated magnets with exotic magnetic properties. Oxides of the type A 2 B 2 O 7 (where A = Rare Earth, B = Ti, Mo have been successfully synthesised in single crystal form using the floating zone method. The main difficulty of employing this technique for the growth of rare earth zirconium oxides A 2 Zr 2 O 7 arises from the high melting point of these materials. This drawback has been recently overcome by the use of a high power Xenon arc lamp furnace for the growth of single crystals of Pr 2 Zr 2 O 7 . Subsequently, large, high quality single crystals of several members of the zirconate family of pyrochlore oxides A 2 Zr 2 O 7 (with A = La → Gd have been grown by the floating zone technique. In this work, the authors give an overview of the crystal growth of lanthanide zirconates. The optimum conditions used for the floating zone growth of A 2 Zr 2 O 7 crystals are reported. The characterisation of the crystal boules and their crystal quality is also presented.

  2. Kinetic roughening transition and missing regime transition of melt crystallized polybutene-1 tetragonal phase: growth kinetics analysis

    Institute of Scientific and Technical Information of China (English)

    Motoi YAMASHITA

    2009-01-01

    The morphology and lateral growth rate of isotactic polybutene-1 (it-PBl) have been investigated for crystallization from the melt over a wide range of crystallization temperatures from 50 to 110°C. The morphology of it-PBl crystals is a rounded shape at crystallization temperatures lower than 85°C, while lamellar single crystals possess faceted morphology at higher crystallization temperatures. The kinetic roughening transition occurs around 85°C. The nucleation and growth mechanism for crystallization does not work below 85°C, since the growth face is rough. However, the growth rate shows the supercooling dependence derived from the nucleation and growth mechanism. The nucleation theory seems still to work even for rough surface growth. Possible mechanisms for the crystal growth of this polymer are discussed.

  3. Research on YB68 for Microwave Acoustic Crystals

    Science.gov (United States)

    1974-11-01

    techniques. Comparisons were made among sapphire crystals grown by Verneuil , Czochralski, and chemical vapor deposition tech- niques, and MgAlsO, spinel grown...long memory time, microwave ultrasonic delay lines. Information on sapphire , spinel, yttrium aluminum garnet, and yttrium boride is presented. At...and for longitudinal waves in P-rhombohedral boron and Al 0 3 ( sapphire ). At present, delay lines are constructed prircipally from sapphire , using

  4. Growth and characterization of pure and Cadmium chloride doped KDP Crystals grown by gel medium

    Science.gov (United States)

    Kalaivani, M. S.; Asaithambi, T.

    2016-10-01

    Crystal growth technology provides an important basis for many industrial branches. Crystals are the unrecognized pillars of modern technology. Without crystals, there is no electronic industry, no photonic industry, and no fiber optic communications. Single crystals play a major role and form the strongest base for the fast growing field of engineering, science and technology. Crystal growth is an interdisciplinary subject covering physics, chemistry, material science, chemical engineering, metallurgy, crystallography, mineralogy, etc. In past few decades, there has been a keen interest on crystal growth processes, particularly in view of the increasing demand of materials for technological applications. Optically good quality pure and metal doped KDP crystals have been grown by gel method at room temperature and their characterization have been studied. Gel method is a much uncomplicated method and can be utilized to synthesize crystals which are having low solubility. Potassium dihydrogen orthophosphate KH2PO4 (KDP) continues to be an interesting material both academically and industrially. KDP is a representative of hydrogen bonded materials which possess very good electro - optic and nonlinear optical properties in addition to interesting electrical properties. Due to this interesting properties, we made an attempt to grow pure and cadmium chloride doped KDP crystals in various concentrations (0.002, 0.004, 0.006, 0.008 and 0.010) using gel method. The grown crystals were collected after 20 days. We get crystals with good quality and shaped. The dc electrical conductivity (resistance, capacitance and dielectric constant) values were measured at frequencies in the range of 1 KHZ and 100 HZ of pure and cadmium chloride added crystal with a temperature range of 400C to 1300C using simple two probe setup with Q band digital LCR meter present in our lab. The electrical conductivity increases with increase of temperature. The dielectric constants of metal doped KDP

  5. Growth of large aluminum nitride single crystals with thermal-gradient control

    Energy Technology Data Exchange (ETDEWEB)

    Bondokov, Robert T.; Rao, Shailaja P.; Schowalter, Leo J.

    2017-02-28

    In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.

  6. Introducing uncertainty analysis of nucleation and crystal growth models in Process Analytical Technology (PAT) system design of crystallization processes.

    Science.gov (United States)

    Samad, Noor Asma Fazli Abdul; Sin, Gürkan; Gernaey, Krist V; Gani, Rafiqul

    2013-11-01

    This paper presents the application of uncertainty and sensitivity analysis as part of a systematic model-based process monitoring and control (PAT) system design framework for crystallization processes. For the uncertainty analysis, the Monte Carlo procedure is used to propagate input uncertainty, while for sensitivity analysis, global methods including the standardized regression coefficients (SRC) and Morris screening are used to identify the most significant parameters. The potassium dihydrogen phosphate (KDP) crystallization process is used as a case study, both in open-loop and closed-loop operation. In the uncertainty analysis, the impact on the predicted output of uncertain parameters related to the nucleation and the crystal growth model has been investigated for both a one- and two-dimensional crystal size distribution (CSD). The open-loop results show that the input uncertainties lead to significant uncertainties on the CSD, with appearance of a secondary peak due to secondary nucleation for both cases. The sensitivity analysis indicated that the most important parameters affecting the CSDs are nucleation order and growth order constants. In the proposed PAT system design (closed-loop), the target CSD variability was successfully reduced compared to the open-loop case, also when considering uncertainty in nucleation and crystal growth model parameters. The latter forms a strong indication of the robustness of the proposed PAT system design in achieving the target CSD and encourages its transfer to full-scale implementation.

  7. Introduction to Phase-Field Model and Its Applications in the Fields of Crystal Growth and Planetary Science

    Science.gov (United States)

    Miura, Hitoshi; Yokoyama, Etsuro; Tsukamoto, Katsuo

    2010-07-01

    The growth of crystal induces a change of ambient environment (temperature, concentration, etc.), and the environmental change gives some feedback to the growth of crystal. The interaction between the crystal growth and ambient environment is important to be taken into consideration, also in the crystallization process of cosmic crystals observed in chondritic meteorites. In this lecture, we will introduce the phase-field simulation, which is one of the powerful numerical methods to treat the crystal growth and diffusion fields (temperature, concentration, etc.) simultaneously. Participants can experience some phase-field simulations on their own laptop by using a newly developed Java program, which will be distributed at the school.

  8. Crystal growth and optical properties of 4-aminobenzophenone (ABP)

    Science.gov (United States)

    Li, Zhengdong; Wu, Baichang; Su, Genbo; Huang, Gongfan

    1997-02-01

    Bulk crystals of 4-aminobenzophenone (ABP) were grown from organic solution. The crystal structure was determined by X-ray analysis. The refractive indices were determined by the method of prism minimum deviation. Some effective nonlinear-optical coefficients deff were measured. A blue second-harmonic emission with wavelengths of 433 and 460 nm were observed during laser diode pumping.

  9. Crystal growth and morphology of calcium oxalates and carbonates

    NARCIS (Netherlands)

    Heijnen, W.M.M.

    1986-01-01

    The main purpose of the research described in this thesis is to establish a relationship between the crystal structure and morphology of calcium oxalate and calcium carbonate crystals grown from aqueous solutions. Starting point is the PBC (Periodic Bond Chain) theory formulated by Hartman and Perdo

  10. The transport phenomena during the growth of ZnTe crystal by the temperature gradient solution growth technique

    Science.gov (United States)

    Yin, Liying; Jie, Wanqi; Wang, Tao; Zhou, Boru; Yang, Fan

    2017-03-01

    A numerical model is developed to simulate the temperature field, the thermosolutal convection, the solute segregation and the growth interface morphology during the growth of ZnTe crystal from Te rich solution by the temperature gradient solution growth (TGSG) technique. Effects of the temperature gradient on the transport phenomena, the growth interface morphology and the growth rate are examined. The influences of the latent heat and the thermal conductivity of ZnTe crystal on the transport phenomena and the growth interface are also discussed. We find that the mass transfer of ZnTe in the solution is very slow because of the low diffusion coefficient and the lack of mixing in the lower part of the solution. During the growth, dilute solution with high density and low growth temperature accumulates in the central region of the growth interface, making the growth interface change into two distinct parts. The inner part is very concave, while the outer part is relatively flat. Growth conditions in front of the two parts of the growth interface are different. The crystalline quality of the inner part of the ingot is predicted to be worse than that of the outer part. High temperature gradient can significantly increase the growth rate, and avoid the diffusion controlled growth to some extent.

  11. Growth and studies of cyclohexylammonium 4-methoxy benzoate single crystal for nonlinear optical applications

    Science.gov (United States)

    Sathya, P.; Gopalakrishnan, R.

    2015-06-01

    Cyclohexylammonium 4-Methoxy Benzoate (C4MB) was synthesised and the functional groups were confirmed by FTIR analysis. The purified C4MB (by repeated recrystallisation) was used for single crystal growth. Single crystal of cyclohexylammonium 4-methoxy benzoate was successfully grown by slow evaporation solution growth method at ambient temperature. Structural orientations were determined from single crystal X-ray diffractometer. Optical absorption and cut off wavelength were identified by UV-Visible spectroscopy. Thermal stability of the crystal was studied from thermogravimetric and differential thermal analyses curves. Mechanical stability of the grown crystal was analysed by Vicker's microhardness tester. The Second Harmonic Generation (SHG) study revealed that the C4MB compound exhibits the SHG efficiency 3.3 times greater than KDP crystal.

  12. Growth and studies of cyclohexylammonium 4-methoxy benzoate single crystal for nonlinear optical applications

    Energy Technology Data Exchange (ETDEWEB)

    Sathya, P.; Gopalakrishnan, R., E-mail: krgkrishnan@annauniv.edu [Crystal Research Lab, Department of Physics, Anna University, Chennai-600002 (India)

    2015-06-24

    Cyclohexylammonium 4-Methoxy Benzoate (C4MB) was synthesised and the functional groups were confirmed by FTIR analysis. The purified C4MB (by repeated recrystallisation) was used for single crystal growth. Single crystal of cyclohexylammonium 4-methoxy benzoate was successfully grown by slow evaporation solution growth method at ambient temperature. Structural orientations were determined from single crystal X-ray diffractometer. Optical absorption and cut off wavelength were identified by UV-Visible spectroscopy. Thermal stability of the crystal was studied from thermogravimetric and differential thermal analyses curves. Mechanical stability of the grown crystal was analysed by Vicker’s microhardness tester. The Second Harmonic Generation (SHG) study revealed that the C4MB compound exhibits the SHG efficiency 3.3 times greater than KDP crystal.

  13. Growth of strontium oxalate crystals in agar–agar gel

    Indian Academy of Sciences (India)

    P V Dalal; K B Saraf

    2011-04-01

    Single crystals of strontium oxalate have been grown by using strontium chloride and oxalic acid in agar–agar gel media at ambient temperature. Different methods for growing crystals were adopted. The optimum conditions were employed in each method by varying concentration of gel and reactants, and gel setting time etc. Transparent prismatic bi-pyramidal platy-shaped and spherulite crystals were obtained in various methods. The grown crystals were characterized with the help of FT–IR studies and monoclinic system of crystals were supported with lattice parameters = 9.67628 Å, = 6.7175 Å, = 8.6812 Å, = 113.566°, and = 521.84 Å3 calculated from X-ray diffractogram.

  14. Growth of ZSM-5 crystals within hollow β-zeolite

    Institute of Scientific and Technical Information of China (English)

    Qing Hu Zeng; Xiang Bai; Jia Jun Zheng; Jia Qi Chen; Rui Feng Li

    2011-01-01

    A zeolite composite composed of ZSM-5 and β-zeolites has been synthesized by a procedure of the nucleation and crystallization of ZSM-5 zeolite in the hollow β-zeolite. The property of β-zeolite crystals with aluminum-poor interior and aluminum-rich outer rim results in silicon extraction favorably in the aluminum-poor bulk rather than the aluminum-rich external surface. Subsequently, alkaline treatment of β-zeolite crystals during the second-step synthesis leads to a preferential dissolution of the aluminum-poor center and the formation of hollow β-zeolite crystals. ZSM-5 zeolite crystals are therefore embedded and grown within the hollow β-zeolite. The catalytic activities of Co-Hβ, Co-HZSM-5 and Co-HZSM-5/BEA are investigated during the reaction of methane catalytic reduction NO in the presence of O2.

  15. Growth and properties of benzil doped benzimidazole (BMZ) single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Babu, R. Ramesh, E-mail: rampap2k@yahoo.co.in [Crystal Growth and Thin Film Laboratory, School of Physics, Bharathidasan University, Tiruchirappalli 620 024 (India); Crystal Growth and Crystallography Section, National Physical Laboratory, Krishnan Marg, New Delhi 110 012 (India); Sukumar, M. [Crystal Growth and Thin Film Laboratory, School of Physics, Bharathidasan University, Tiruchirappalli 620 024 (India); Vasudevan, V. [Crystal Growth and Thin Film Laboratory, School of Physics, Bharathidasan University, Tiruchirappalli 620 024 (India); Crystal Growth and Crystallography Section, National Physical Laboratory, Krishnan Marg, New Delhi 110 012 (India); Shakir, Mohd. [Crystal Growth and Crystallography Section, National Physical Laboratory, Krishnan Marg, New Delhi 110 012 (India); Ramamurthi, K. [Crystal Growth and Thin Film Laboratory, School of Physics, Bharathidasan University, Tiruchirappalli 620 024 (India); Bhagavannarayana, G. [Crystal Growth and Crystallography Section, National Physical Laboratory, Krishnan Marg, New Delhi 110 012 (India)

    2010-09-15

    In the present work, we have made an attempt to study the effect of benzil doping on the properties of benzimidazole single crystals. For this purpose we have grown pure and benzil doped benzimidazole single crystals by vertical Bridgman technique. The grown crystals were characterized by various characterization techniques. The presence of dopants confirmed by powder X-ray diffraction (XRD). Crystalline perfection of the grown crystals has been analysed by high-resolution X-ray diffraction (HRXRD). The transmittance, electrical property and mechanical strength have been analysed using UV-vis-NIR spectroscopic, dielectric and Vicker's hardness studies. The relative second harmonic generation efficiency of pure and doped benzimidazole crystals measured using Kurtz powder test.

  16. Vapor Growth and Characterization of Cr-Doped ZnSe Crystals

    Science.gov (United States)

    Su, Ching-Hua; Feth, Shari; Volz, M. P.; Matyi, R.; George, M. A.; Chattopadhyay, K.; Burger, A.; Lehoczky, S. L.

    1999-01-01

    Cr-doped ZnSe single crystals were grown by a self-seeded physical vapor transport technique in both vertical (stabilized) and horizontal configurations. The source materials were mixtures of ZnSe and CrSe. Growth temperatures were in the range of 1140-1150 C and the furnace translation rates were 1.9-2.2 mm/day. The surface morphology of the as-grown crystals was examined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Different features of the as-grown surface of the vertically and horizontally grown crystals suggest that different growth mechanisms were involved in the two growth configurations. The [Cr] doping levels were determined to be in the range of 1.8-8.3 x 10 (exp 19) cm (exp -3) from optical absorption measurements. The crystalline quality of the grown crystals were examined by high-resolution triple-crystal X-ray diffraction (HRTXD) analysis.

  17. Modeling of Macroscopic/Microscopic Transport and Growth Phenomena in Zeolite Crystal Solutions Under Microgravity Conditions

    Science.gov (United States)

    Gatsonis, Nikos A.; Alexandrou, Andreas; Shi, Hui; Ongewe, Bernard; Sacco, Albert, Jr.

    1999-01-01

    Crystals grown from liquid solutions have important industrial applications. Zeolites, for instance, a class of crystalline aluminosilicate materials, form the backbone of the chemical process industry worldwide, as they are used as adsorbents and catalysts. Many of the phenomena associated with crystal growth processes are not well understood due to complex microscopic and macroscopic interactions. Microgravity could help elucidate these phenomena and allow the control of defect locations, concentration, as well as size of crystals. Microgravity in an orbiting spacecraft could help isolate the possible effects of natural convection (which affects defect formation) and minimize sedimentation. In addition, crystals will stay essentially suspended in the nutrient pool under a diffusion-limited growth condition. This is expected to promote larger crystals by allowing a longer residence time in a high-concentration nutrient field. Among other factors, the crystal size distribution depends on the nucleation rate and crystallization. These two are also related to the "gel" polymerization/depolymerization rate. Macroscopic bulk mass and flow transport and especially gravity, force the crystals down to the bottom of the reactor, thus forming a sedimentation layer. In this layer, the growth rate of the crystals slows down as crystals compete for a limited amount of nutrients. The macroscopic transport phenomena under certain conditions can, however, enhance the nutrient supply and therefore, accelerate crystal growth. Several zeolite experiments have been performed in space with mixed results. The results from our laboratory have indicated an enhancement in size of 30 to 70 percent compared to the best ground based controls, and a reduction of lattice defects in many of the space grown crystals. Such experiments are difficult to interpret, and cannot be easily used to derive empirical or other laws since many physical parameters are simultaneously involved in the process

  18. On the origin of size-dependent and size-independent crystal growth: Influence of advection and diffusion

    Science.gov (United States)

    Kile, D.E.; Eberl, D.D.

    2003-01-01

    Crystal growth experiments were conducted using potassium alum and calcite crystals in aqueous solution under both non-stirred and stirred conditions to elucidate the mechanism for size-dependent (proportionate) and size-independent (constant) crystal growth. Growth by these two laws can be distinguished from each other because the relative size difference among crystals is maintained during proportionate growth, leading to a constant crystal size variance (??2) for a crystal size distribution (CSD) as the mean size increases. The absolute size difference among crystals is maintained during constant growth, resulting in a decrease in size variance. Results of these experiments show that for centimeter-sized alum crystals, proportionate growth occurs in stirred systems, whereas constant growth occurs in non-stirred systems. Accordingly, the mechanism for proportionate growth is hypothesized to be related to the supply of reactants to the crystal surface by advection, whereas constant growth is related to supply by diffusion. Paradoxically, micrometer-sized calcite crystals showed proportionate growth both in stirred and in non-stirred systems. Such growth presumably results from the effects of convection and Brownian motion, which promote an advective environment and hence proportionate growth for minute crystals in non-stirred systems, thereby indicating the importance of solution velocity relative to crystal size. Calcite crystals grown in gels, where fluid motion was minimized, showed evidence for constant, diffusion-controlled growth. Additional investigations of CSDs of naturally occurring crystals indicate that proportionate growth is by far the most common growth law, thereby suggesting that advection, rather than diffusion, is the dominant process for supplying reactants to crystal surfaces.

  19. Crystal growth, optical properties, and CW laser operation at 1.06 μm of Nd:GAGG crystals

    Science.gov (United States)

    Zhang, J.; Tao, X. T.; Dong, C. M.; Jia, Z. T.; Yu, H. H.; Zhang, Y. Z.; Zhi, Y. C.; Jiang, M. H.

    2009-05-01

    In this paper, the crystal growth and characterization of Nd:Gd3AlxGa5-xO12 (x = 0.94) (Nd:GGAG) was reported. The X-ray powder diffraction studies confirm that the Nd:Gd3AlxGa5-xO12 crystal is isostructural with Gd3Ga5O12 (GGG) with unit cell parameter of 1.2319 nm. The absorption and emission spectra of the Nd:GGAG crystal at room temperature have been studied. With a laser-diode (LD) as the pump source, continuous-wave (CW) laser performance at 1.06 μm of Nd:GAGG crystal was demonstrated for the first time to our knowledge. The maximum power of 2.44 W from Nd:GAGG laser was obtained with the optical conversion efficiency 28.5%, and slope efficiency of 28.8%.

  20. Crystal growth and characterization of new semiorganic nonlinear optical single crystals

    Science.gov (United States)

    Kulshrestha, Shobha; Shrivastava, A. K.

    2016-05-01

    An organic material of a L-histidine monohydrochloride single crystal was grown in a distilled water solution using the slow evaporation method at 40-45°C. The grown crystal was transparent and colourless, with a size of about 20 × 9 × 5 mm3, obtained within a period of 21 days. The solubility of grown crystals have found out at various temperatures. The UV-visible transmittance studies show that the grown crystals have wide optical transparency in the entire visible region It is observed that the crystal has transparency window from 255nm to 700nm and its energy gap (Eg) found to be is 3.1eV. The grown crystal was subjected to powder X-ray diffraction analysis, confirming that the orthorhombic crystalline nature of the crystal. To identify the surface morphology, the as grown crystal was subjected to FE-SEM technique. The chemical composition of the grown crystal was estimated by Energy dispersive X-ray analysis. The optical behaviour of the grown crystal was analyzed by PL study.